NBSIR 87-3556

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

April to June 1986 with

1987 CEEE Events Calendar

May 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO MAY 1987 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the fifteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

second quarter of calendar year 1986.

Organization of Bulletin : This issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication". Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact for more information on the topic (usually the first author). This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1987 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and Processes and the Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program, car- ried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the

Center are given on the back cover; readers are encouraged to contact any of these

individuals for further information. To request a subscription or for more

information on the Bulletin , write to CEEE Technical Progress Bulletin, National

Bureau of Standards, Metrology Building, Room B-358, Gaithersburg, MD 20899 or call

(301) 975-2220.

Center sponsors ; The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 31.

Note on Publication Lists ; Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 28.
CEEE Technical Progress Bulletin - May 87 Page 1 TABLE OF CONTENTS

INTRODUCTION Inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2

Analysis Techniques 2 Dimensional Metrology 3

Integrated Circuit Test Structures 4

Process and Device Modeling • 4

Gallium Arsenide Materials 5

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 6

Waveform Metrology 6

Cryoelectronic Metrology 6

Antenna Metrology 8

Noise Metrology 10

Microwave and Mil limeter-Wave Metrology 10

Laser Metrology 13

Optical Fiber Metrology 13

Electro-Optic Metrology • 14

Other Fast Signal Topics 15

ELECTRICAL SYSTEMS 16

Power Systems Metrology 16

Pulse Power Metrology 20

Superconductors 20

Magnetic Materials and Measurements 22

Other Electrical Systems Topics 22

ELECTROMAGNETIC INTERFERENCE 23

Radiated Electromagnetic Interference • 23

Conducted Electromagnetic Interference 28

ADDITIONAL INFORMATION 28

1987 CEEE CALENDAR 2 9

SPONSOR LIST 31

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - May 1987

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Mayo, S., and Lowney, J.R., Photoionization Cross-Section Studies of the

Platinum-Donor Center in Silicon.

The relative photoionization cross section of the platinum donor center in

silicon was measured over the wavelength

range of 2.4 to 3.9 pm by electrical

deep-level optical spectroscopy (DLOS)

on a n+p junction at 80 K. The data

were analyzed in terms of the latticecoupling model proposed by Ridley and

Amato, which was modified for valence

band nonparabolicity . Good agreement

was obtained between the experimental

results and the model calculations of

the cross section with the energy level

of the donor at 0.320 ± 0.005 eV above

the valence band edge and a Huang-Rhys

factor S of approximately 1.4. This S

value corresponds to a Franck-Condon

energy shift of 70 meV with a phonon

energy of 50 meV. Previously reported

photoionization data of the gold donor

were also fit by the same model yielding

S - 0.4, a surprisingly small value.

Estimates were made of the majority

carrier capture cross section for these

two levels and for the platinum acceptor

center in silicon which was measured

previously. These estimates, based on Ridley's quantum defect model and our measured S-values, are several orders of

magnitude smaller than the corresponding

measured values, indicative of the complex nature of these 5d- transition elements in silicon. More elaborate models, perhaps including anharmonicity of

the defect vibrations, are required to

understand these large capture cross

sections.

[Contact; Santos Mayo, (301) 975-2045]

Analysis Techniques

Released for Publication

Bouldin, C.E. , Forman, R.A., and Bell,

M.I., Conversion Yield EXAPS Measorements of Ion-Damaged

Extended x-ray absorption fine structure

(EXAFS) measurements of ion- implanted

GaAs have been made using conversion

electron detection. This total electron

yield detection technique (termed

CEEXAFS) allows near-surface sensitivity

with a sampling depth of 700 to 1000 A.

Measurements of the Ga absorption edge

show that implantation of 10^^ cm~ ^ of

Zn ions at 180 keV into GaAs produces

heavy lattice damage (amorphization) to

a depth of about 700 to 900 A. After

rapid thermal annealing, the ^orphous

layer is found to be recrystallized and

structurally indistinguishable from

unimplanted material. The sampling

depth of CEEXAFS has been measured for

the first time, using standards with

known depth dependent structure. The

CEEXAFS technique greatly reduces Bragg

peak contamination of the EXAFS signal

from single crystal materials, and allows measurement of a variety of samples

which cannot be fabricated as thin layers for conventional transmission or fluorescence EXAFS measurements. The

method permits examination of the local

environment of host atoms (in this case

Ga) in the near surface region without

interference from the underlying bulk

and without the distortions found in

fluorescence EXAFS measurements of con- centrated samples.

[Contact: Charles E. Bouldin, (301)

975-2046]

Recently Published

Baghdadi, A., Gladden, W.K. , and Flach,

D.R., Nonlinear Effects of Digitizer

Errors in FT-IR Spectroscopy, Appl.

Spectroscopy, Vol. 40, No. 5, pp.

617-628 (1986)

.

This paper is an investigation of the

effects of errors in the analog- todigital converter (ADC) of a Fourier

transform infrared (FT-IR) spectrometer

on the photometric accuracy of that

spectrometer. The effect of ADC errors

on the spectrum after Fourier transfer-
CEEE Technical Progress Bulletin - May 1987 Page 3

Analysis Techniques ^ cont'd.

mation are calculated analytically for

monochromatic, two-line and wide square

band emission spectra. Numerical modeling is used to extend the analysis to

absorption spectra, and to include the

effects of noise on the amplitude of

absorbance bands. These analyses show

that ADC errors can generate artifacts

throughout the spectrum, although the

largest effects occur at sharp spectral

features. Errors as large as 8% in the

amplitude of absorbance bands can be

produced by ADC errors of one least

significant bit (LSB), in a 15-bit ADC.

These results were confirmed qualitatively by measuring the net height of

the oxygen vibrational band in silicon

at 1107 cm~ ^ using four different ADC

circuit boards in the same FT-IR spectrometer. At the highest signal levels,

the boards disagreed by as much as 4%,

even though the static transfer characteristics of the ADC boards (which were

measured in a separate experiment) ex- hibited errors of less than ±2 LSBs.

[Contact: Aslan Baghdadi, (301)

975-2062]

Dimensional Metrology

Recently Published

Chandler-Horowitz , D. , Semiconductor

Measurement Technology: Analytic Analysis of Ellipsometric Errors, NBS

Special Publication 400-78 (May 1986).

A computer program is given that con- tains an ej^licit ellipsometric error

analysis. The program can identify the

ellipsometric inaccuracies for any ellipsometer, can be used to determine

which parameters contribute the most to

the overall measurement inaccuracy, and

can lead one to an optimum measurement

procedure. A FORTRAN program that performs the evaluation of the partial

derivative expressions needed to analyze

ellipsometric measurement uncertainties

is listed. The program determines the

uncertainty in the calculation of the

refractive index of a bare isotropic

substrate or the uncertainty in the

determination of the thickness and re- fractive index of a nonabsorbing film on

a substrate of known refractive index.

These are the two most commonly used

surface models used in ellipsometry

performed at a single angle of incidence

and a single wavelength. The program

input parameters include the wavelength

of the light, the angle of incidence and

its uncertainty, and the uncertainties

in the ellipsometric parameters A and 4^. They also include in the ambientsubstrate model an estimated value for

the substrate's refractive index, and in

the f ilm-subs trate model the refractive

index of the substrate and its uncertainty and estimated values for the

film's refractive index and thickness.

The case of the conventional null ellipsometer utilizing a quarter-wave plate

is treated to find the uncertainties in

A and ij; from the uncertainties in the

polarizer and analyzer null values and

the waveplate constants.

[Contact: Deane Chandler-Horowitz,

(301) 975-2084]

Nyyssonen, D. , Linewidth Calibration

for Bright-Chrominm Photomasks, NBSIR

86-3357 (May 1986).

Linewidth measurement errors are introduced when an anti-reflective (AR) chromium photomask standard such as the NBS

SRM 474/475 is used to calibrate an optical linewidth measurement system for

subsequent measurements on another material such as bright chromium whose optical properties (index of refraction,

thickness, reflectance, and edge geometry) do not match those of the calibration standard. In addition to differences in the optical properties of the

materials, the magnitude of these errors

varies from system to system and depends

upon resolution, choice of edgedetection criterion, flare light in the

optical system, and detector response.

These errors are greatest when measurements are made in reflected light due to

the greater sensitivity to the mismatch

in optical parameters of the materials

between the calibration standard (AR-
Page 4 CEEE Technical Progress Bulletin - May 1987

Dimensional Metrology , cont'd.

chromium) and the material to be measured (bright chromium), Ihis report,

therefore, recommends use of transmitted

light for linewidth measurements on

photomasks and as close a match as possible between the material parameters of

the calibration standard and those of

the part being measured in order to

ensure a realistic assessment of the

accuracy and precision of subsequent

measurements

.

[Contact: Robert D. Larrabee, (301)

975-2298]

Integrated Circuit Test Structures

Released for Publication

Cresswell, M.W., Pessall, N, , Linholm,

L.W., and Radack, D.J. , Bie Use of

Artificial Intelligence and Microelectronic Test Structures for Evaluation

and Yield Enhancement of Microelectronic Interconnect Syst^s , to be published in the Proceedings of the Conference on VLSI Multilevel Interconnection, Santa Clara, California, June

9-1 1, 1986.

A major factor limiting the production

and performance of high-density VLSI

integrated circuits is the fabrication

of reliable interconnect systems. Properly designed microelectronic test

structures and appropriate test methods

can be used to characterize the processes used to fabricate these systems.

However, the computer-controlled testing

of comprehensive process evaluation and

diagnosis structures often results in

large quantities of data which cannot be

readily or effectively interpreted by

the user. As a result, important features of the data are often overlooked

or not considered in the evaluation of

the fabrication processes. This paper

describes an expert system for assisting

the user to interpret test results associated with fabricating selected aspects

of VLSI interconnect systems.

[Contact: Loren W. Linholm, <301)

975-2052]

Galloway, K. F., Diehl, S.E., and Linholm, L.W., Metrological Challenges

In Semiconductor Technology: Electrical Measurements of Dimensions and

Materials Properties Using Integrated

Circuit Test Structures, to be published in the Proceedings of the International Conference on Semiconductor & Integrated Circuit Technology, Beijing,

China, October 19-26, 1986.

The effective characterization and con- trol of the materials, processes, devices, and circuits for very-large-scale

integration (VLSI) is a major concern

for semiconductor technology development. This paper reviews the types of

metrological requirements associated

with VLSI semiconductor technology and

examines dimensional measurements and

materials characterization at the wafer

or chip level. Integrated circuit test

structures for electrical measurements

of dimensions and material properties

are described.

[Contact: Loren W. Linholm, (301)

975-2052]

Process and Device Modeling

Recently Published

Hefner, A.R., and Blackburn, D.L. , Performance Trade-Off for the Insulated

Gate Bipolar Transistor: Buffer Layer

Versus Base Lifetime Reduction, 1 986

Power Electronics Specialists Conference, Vancouver, British Columbia,

Canada, June 23, 1 986, pp. 27-38

(1 986) .

A one-dimensional analytic model for the

Insulated Gate Bipolar Transistor (IGBT)

which includes a high-doped buffer layer

in the low-doped bipolar transistor base

is developed.— The model is used to

perform a theoretical trade-off study

between IGBTs with and without the buffer layer. The study is performed for

devices of equal breakdown voltages, and

the critical parameters chosen to

"trade-off" are turn-off switching energy loss (related to turn-off time) and

on-state voltage, both at a given cur-
CEEE Technical Progress Bulletin - May 1987 Page 5

Process and Device Modeling , cont'd.

rent. In this study, as in reality, the

two critical parameters are varied by:

1 ) adjusting the doping concentration

and thickness of a buffer layer included

as part of the bipolar transistor base,

2) adjusting the lifetime in the lew

doped bipolar transistor base with no buffer layer included, or by 3) a combination of 1) and 2). Ihe results of the

model predict that for equal breakdown

voltages, an optimized device with a buffer layer has less switching energy

loss for a given on-state voltage than

an optimized device with no buffer

layer.

[Contact: Allen R. Hefner, (301)

975-2071]

Wachnik, R.A., and Lowney, J. R., A

Model for the Charge-Pumping Current

Based on Small Eectcuagular Voltage

Pulses, Solid-State Electronics, Vol.

29, No. 4, pp. 447-460 (1986).

The charge-pumping current results from

recombination associated with the

Si 02 “Si interface traps under the gate

of a me t a 1 - o xi d e - s em i c o ndu c t o

field-effect transistor (MOSFET) when a voltage pulse is applied to the gate. A

model is proposed which predicts this

current as a function of the frequency,

amplitude, and average voltage of pulses

with peak-to-peak amplitudes less than

the difference between the flatband and

inversion voltages and with pulse

transitions fast enough so that

negligible capture or emission occurs

during the transition. The model is

based on Shockley-Read-Hall traps

segregated by energy and capture cross

section into traps which capture only

and traps which tend to emit before

capture. It predicts the dominant behavior of the measured current and with

the inclusion of surface potential fluctuations and a distribution of cross

sections it agrees very well with

experiment. Thus, the charge pumping

current due to these small rectangular

pulses can be used to determine the

density, the electron capture cross

section, and the hole capture cross section of interface traps near midgap.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Gallium Arsenide Materials

Released for Publication

Bouldin, C.E. , Forman, R.A., and Bell,

M.I., Conversion Yield EXAFS Measurements of Ion-Damaged GclAs.

Extended x-ray absorption fine structure

(EXAFS) measurements of ion- implanted

GaAs have been made using conversion

electron detection. This total electron

yield detection technique (termed

CEEXAFS) allows near-surface sensitivity

with a sampling depth of 700 to 1000 A.

Measurements of the Ga absorption edge

show that implantation of 10^^ cm-^ of

Zn ions at 1 80 KeV into GaAs produces

heavy lattice damage (amorphization) to

a depth of about 700 to 900 A. After

rapid thermal annealing, the amorphous

layer is found to be recrystallized and

structurally indistinguishable from

unimplanted material. The sampling

depth of CEEXAFS has been measured for

the first time, using standards with

known depth dependent structure. The

CEEXAFS technique greatly reduces Bragg

peak contamination of the EXAFS signal

from single crystal materials, and allows measurement of a variety of samples

which cannot be fabricated as thin lay- ers for conventional transmission or fluorescence EXAFS measurements. The

method permits examination of the local

environment of host atoms (in this case

Ga) in the near surface region without

interference from the underlying bulk

and without the distortions found in

fluorescence EXAFS measurements of con- centrated samples.

[Contact: Charles E. Bouldin, (301)

975-2046]

Lowney , J. R . , Impurity Bands and Band

Tailing in n-Type GclAs.

The density of states of the valence and

conduction bands of n-type GaAs have
Page 6 CEEE Technical Progress Bulletin - May 1987

Gallium Arsenide Materials, cont'd.

been calculated for a donor density of

10^^ cm” ^ at 300 K and 20 K. Both the

donor-carrier and carrier-carrier interactions have been included. Band tails

appear on both bands and the energy gap

is narrowed. Calculations were also

performed for a donor density of 10^^

cm”^. The results show the formation of

an impurity band at 20 K, whereas a band

tail exists at 300 K.

[Contact; Jeremiah R. Lowney, (301)

975-2048]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Recently Published

Cans, W.L. , Calibration and Error

Analysis of a Picosecond Pulse Waveform

Measurement System at NBS, Proceedings of the IEEE, Vol. 74, No. 1, pp.

86-90 (January 1986).

The primary system used at NBS, Boulder,

CO, to measure fast (picosecond-nanosecond range) , repetitive, electric

pulse parameters consists essentially of

a wide-band (dc -18 GHz) sampling oscilloscope interfaced to a minicomputer.

This paper describes the major calibration and analysis techniques used to

reduce the effects of errors inherent in

this system, both deterministic and

random in nature.

[Contact: William L. Gans, (303)

497-3538]

Lawton, R.A., An Efficient: Antialiasing Filter, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM-34, No. 4. , pp. 570-573 (December

1 985)

.

The application of a solid-state

reference filter as an efficient

antialiasing filter is described. The

analytical basis for the efficiency of

this filter is described and a specific

example of measuring a 1024-point

waveform with a resistance-capacitance

(RC) filter network and the solid-state

filter is given.

[Contact; Robert A. Lawton, (3 03)

497-3339]

Souders, T.M., Flach, D.R., and Schoenwetter, H.K. , Transient Respons Characterization of Waveform Recorders,

Proceedings of the 5th lEE Pulsed Power

Conference, Arlington, Virginia, June

10-12, 1985, pp. 352-355 (May 1986).

Test methods for characterizing the

transient response of waveform recorders

are presented, together with ‘typical

test results. The methods, based on the

use of a precision, programmable step

generator developed at NBS, are suitable

for recorders having up to 10 bits of

resolution and 1 00 MHz bandwidth.

[Contact; T. Michael Souders, (301)

975-2406]

Turgel, R.S., NBS 50 kHz Phase Angle

Calibration Standard, NBS Technical

Note 1220 (April 1986).

A detailed description is given of the

features of an electrical phase angle

calibration standard designed for operation over a frequency span of 2 Hz to 50

kHz. The phase resolution of this calibrator extends from just below 2 millidegrees at the low end of the frequency

range to about 5 millidegrees at the

high end. The uncertainty in the phase

angle is a function of frequency, amplitude, and amplitude ratio of the two

outputs. It varies from 5 to 50 millidegrees.

[Contact; Raymond S. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Released for Publication

Barbanera, S., Lambert, N. , and Zimmerman, J. E., A Versatile Experimental

Low-Power 4 K Cryocooler.

The construction of a low-power cryo-
CEEE Technical Progress Bulletin - May 1987 Page 7

Cryoelectronic Metrology ^ cont'd.

cooler consisting of a five-stage plastic Stirling cooler with an additional

Joule-Thomson stage is described. Among

its novel features are a contaminationfree pneumatic helium compressor and

displacer drive. Valve timing is under

computer control. Titanium foil em- bedded in the cylinder wall reduces

helium diffusion through the plastic.

The Joule-Thomson stage uses the same low-pressure helium as the Stirling

stages. Ihe Stirling system cools down

below 9 K. The Joule-Thomson stage

delivers 5-^nW cooling at 4.2 K.

[Contact: James E. Zimmerman, (3 03)

497-3901]

Hamilton, C.A., Kautz, R.L. , and Lloyd,

F .L . , The NBS Josephson Array Voltage

Standard.

It has been realized for many years that

the accuracy of Josephson voltage standards can be substantially improved by

using many junctions in series to generate a large voltage. A simple series

extension of the single junction standard requires individual control of the

bias current for each junction of 1 00 mV

using 20 junctions. In 1 977 Levinsen et

al. suggested a method to avoid the

multiple bias problem by using constantvoltage steps which cross the zerocurrent axis of the junction I-V curve. This allows a large array of junctions

to share a common current bias at or

near zero. With an array of 1000 or more junctions, a quantized voltage of 1 V is possible. After nearly ten years

of effort, the problems of fabrication,

stability, and rf distribution are

largely solved and Josephson standards

at the 1-V level are a reality. This

paper reviews the design and operation

of series array voltage standards and

describes the efforts at NBS to engineer

a versatile, reliable, and easily used

voltage standard system.

[Contact: Clark A. Hamilton, (303)

497-3740]

McDonald, D.G. , High Accuracy in

Physics (submitted as a letter to

Science )

Philip Abelson, in an editorial in

Science [232, 693 (1986)], reviews the

National Research Council report

"Physics Through the 1990s" and writes

"Of all the quantities in physics, time

is by far the most accurately measured."

I argue that the Josephson effect has

comparable accuracy.

[Contact: Donald G. McDonald, (303)

497-51 1 3]

McDonald, D.G. , Modeling a VoltageLocked Josephson Junction Array Amplifier: Gain, Input Impedance, and Bandwidth.

Previously published experimental re- sults are used to deduce an equivalent

circuit for this amplifier, based on the

shunted junction model. It is found

that the very small inductances of the

junction shunt resistors play an important role in determining the shape of

the current-voltage curves in the voltage-locked region. Once the circuit is

determined using the shunted junction

model, a combination of an approximation

method (the method of slowing varying

amplitudes) and the shunted junction

model is used to approximately maximize

the power gain of the circuit. The

maximum gain achieved in these simulations of the two-junction amplifier is

11.3. This gain occurred with a negative resistance input impedance of

-0.41R and a signal source impedance of

0.1 67R, where R is the junction shunt

resistance. It is estimated that the

bandwidth of this amplifier is about

1 GHz . [Contact: Donald G. McDonald, (303)

497-51 1 3]

Muhlfelder, B.F., Beall, J. A., Cromar,

M.W., and Ono, R.H. , Very Low Noise,

Tightly Coupled, dc SQUID Amplifiers.

We have fabricated and tested an allthin-film niobium edge junction double

transformer dc SQUID (Superconductive

Quantum Interference Device) amplifier
Page 8 CEEE Technical Progress Bulletin - May 1987

Cryoelectronic Metrology, cont'd.

that was robust and had very good noise

performance. The input inductance was approximately 1.7 pH and the minimum

detectable energy per unit bandwidth at

100 kHz was 5 x 10“^^ J/Hz. Ihe minimum

detectable energy per unit bandwidth at

1 kHz in the flux- locked mode was 6 x 10~3 2 j/h2 . The noise was lew for a wide range of bias current and magnetic

f lux.

[Contact: James A. Beall, (303)

497-5989]

Recently Published

Clark, A.F., Conference Report, on the

Tenth International Cryogenic

Engineering Conference, Cryogenics,

Vol. 25, pp. 222-223 (April 1985)

The tenth International Cryogenic

Engineering Conference was held in

Otaniemi, Finland, 31 July to 3 August

1 984, hosted by the Helsinki University

of Technology. More than 300 attendees

representing 22 countries contributed

220 papers on such diverse subjects as sensing human brainwaves from their

magnetic fields to superconducting

magnets the size of railroad cars and to

ultralow temperature refrigerators which

can achieve nuclear temperatures of the

order of nanokelvin. The special topic

for this conference was cryogenics in

medicine, and thus many of the plenary

talks covered cryosurgery, magnetic

resonance imaging, SQUID magnetometers

for heart and brain waves, and

biological preservation.

[Contact; Alan F. Clark, (303)

497-3253]

Hamilton, C.A., Kautz, R.L. , and Lloyd,

F.L., A Josephson Series Array Voltage Standard at One Volt, NCSL 1985

Workshop & Symposium, Boulder, Colorado, July 15-18, 1985, pp. 71-77.

Josephson voltage standards have long

been limited by their lew 1- to 1 0-mV

output level. A new method for operating 1 000 or more Josephson junctions in

series has produced a practical standard

at the 1 -V level. The junction array is

in the form of a microstrip which is

f inline coupled to a waveguide at one

end and is terminated at the other end.

The whole circuit is fabricated on a 6

by 1 2 mm silicon substrate. With applied radiation at 72 GHz, the junction

array produces up to 8000 quantized

levels at the voltages nhf/2e. (In the

U. S. 2e/h has an assigned value of

483593.420 GHz/VjgBS*) By selecting

the level, n, and fine tuning the

frequency, f, any voltage from 0.1 to

1.2 V can be obtained. The high output

voltage eliminates the need for a voltage divider and greatly reduces errors

due to thermal voltages. When fully

evaluated, the new standard is expected

to have a precision of a few parts per

billion.

[Contact: Clark A. Hamilton, (303)

497-3740]

Hamilton, C.A., Kautz, R.L. , Lloyd,

F.L., and Steiner, R.L. , A Practical

Josef^on Voltage Standard at 1 V,

IEEE Electron Device Letters, Vol.

EDL-6, No. 12, pp. 623-625 (December

1985) .

A series array of 1484 pairs of Josephson junctions biased by microwaves at 72

GHz is demonstrated to provide stable

quantized voltages at the 1 -V level.

The niobium/lead-alloy junctions used in

the array are not affected by thermal

cycling.

[Contact: Clark A. Hamilton, (303)

497-3740]

Antenna Metrology

Released for Publication

FitzGerrell, R.G., Linear GainStandard Antennas Below 1 000 MHz , to

be published as NBS Technical Note

1 098.

Gain and antenna parameters related to

input impedance are calculated using a computer program named HVD6. This program uses we 11-documented equations to
CEEE Technical Progress Bulletin - May 1987 Page 9

Antenna Metrology , cont'd.

compute these parameters for gainstandard antennas used in relative-gain

or gain- trans f er measurements at

frequencies below 1000 MHz. In this

frequency range, the physical size of

the antennas is often quite large, and

the measurements are often made outdoors. The utility of this program is

that it calculates gain patterns and

input impedances for linear dipoles

above perfect or imperfect ground and in

free space and for monopoles on plane,

perfect ground. Uncertainties in the

calculated parameters are estimated to

be less than those of the measured

parame ters.

[Contact; Richard G. FitzGerrell, (303)

497-3737]

Hill, D.A., and Francis, M.H.,

Out-of-Band Response of Antenna

Arrays, to be published as NBSIR

86-3047.

The response of antenna arrays to

out-of-band frequencies has been

analyzed using the effective aperture

approach. An average value of effective

aperture can be obtained by averaging

out the incidence angle and the

polarization of the incidence field.

Far-field patterns have also been

calculated by treating the array element

excitations as random variables. The

randanness in the element excitations

causes a decrease in directivity and an

increase in sidelobe level. Out-of-band

measurements of reflection coefficient

and near-field response have been made

on two large slotted-waveguide arrays

for frequencies from 2 to 1 8 GHz. Both

arrays are narrow band, attributable to

the large impedance mismatch at

out-of-band frequencies.

[Contact: David A. Hill, (303)

497-3472]

Newell, A.C., and Stubenrauch, C.F.,

The Effect of Randcxn Errors in Planar

Near-Field Measurements*

Equations have previously been derived

to predict the effect of systematic

errors in planar near-field

measurements. Similar e3q>ressions for

random errors have not been generally

available, although computer simulation

has been used to study some specific

cases. In this report, simple general

expressions are derived to predict the

effect of random errors, and these

expressions require only minimal

information about the antenna and the

error distributions.

[Contact; Allen C. Newell, (303)

497-3743]

Recently Published

Jesch, R.L. , Measured Vehicular Antenna Performance, National Institute

of Justice Report-201 -85 (May 1986).

[A similar paper by the same title

appeared in IEEE Transactions on

Vehicular Technology, Vol. VT-34, No.

2, pp. 97-107 (May 1985).]

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The measurements were performed at frequencies

representing the frequency bands of 25

to 50, 150 to 174, 400 to 512, and 806

to 866 MHz. In addition, the radiation

patterns were measured of three

disguised antennas operating at discrete

frequencies of 40.27, 162.475, and

416.975 MHz and one slot antenna

operating at 413 MHz. Plots of power

gain radiation patterns are given for

the mobile antennas mounted in six

different locations on the test vehicle,

for the other four antennas, and to show

the effects of improper grounding of the

trunk lid and of the lights and siren.

Recommended antenna mounting locations

are identified for specific frequency

bands and an appendix of power gain

measurement data is included.

[Contact; Ramon L. Jesch, (303)

497-3496]

Kanda, M., Chang, D.C., and Greenlee,

D.H., The Characteristics of Iris-Fed
Page 1

0

CEEE Technical Progress Bulletin - May 1987

Antenna Metrology^ cont'd.

Millimeter-Wave Rectangular Microstrip

Patch Antennas, IEEE Transactions on

Electromagnetic Compatibility, Vol.

EMC-27, No. 4, pp. 212-220 (November

1 985)

.

The fabrication of various iris-fed

millimeter-wave rectangular microstrip

patch antennas is described. A

mathematical model is proposed to

describe the iris-fed antenna. An iris

having 15% of the area of the patch is

used to couple energy into the antenna.

Resonance of the antenna is observed to

be insensitive to the size of the iris

for irises up to 115% of the size of the

patch. A study is also made of the

coupling to the antenna as a function of

position of the iris with respect to the

transverse plane of the waveguide, the

iris always being centered with respect

to the patch. In general, the antenna

has a VSWR in the waveguide feed of

roughly 5:1 at resonance, except for the

fully open waveguide which gives rise to

a VSWR of 2.9:1 at resonance. Far-field

antenna power patterns are observed to

be quite broad with H-plane beamwidths

about 1 30° . Maximum antenna gain

observed was 4.5 dB relative to an isotropic source (dBi), with 2 dBi

typical. An initial study is made of

the microstrip patch antenna fed from a longitudinal waveguide wall. Results

indicate that this feed structure is

likely to prove valuable for microstrip

patch antennas, with coupling at least

as good as for the transverse-fed patch,

added to the possibility of feeding

multiple patches from a single

waveguide.

[Contact: Motohisa Kanda, (3 03)

497-5320]

Noise Metrology

Released for Publication

Daywitt, W.C., 10-60 GHz G/T Measurements Using the Sun as a Source—^A Preliminary Study, to be published as NBSIR 86-3046.

Preliminary studies shew that it may be

possible 1 ) to determine the solar flux

density incident on the earth's

atmosphere using a simple algorithm with

an uncertainty less than 8%; 2) to

overcome a deteriorating accuracy in

atmospheric loss calculations by using a "tipping curve" measurement, and 3) to

reduce starshape correction factor

uncertainty by using an equivalent solar

diame ter.

[Contact: William C. Daywitt, (303)

497-3720]

Microwave and Mil lime ter -Wave Metrology

Released for Publication

Daywitt, W.C., Complex Admittance of a Lossy Coaxial Open Circuit with a Hollow Center Conductor.

The reflection coefficient and complex

discontinuity admittance of a coaxial

open circuit with a hollow center

conductor are derived from fields

correct to first order in the skin

depth. Results shew an admittance

terminating the line at the plane of the

discontinuity and consisting of a resistance in parallel with a capacitive

reactance. The first-order fields are

also used to derive equations for the

characteristic admittance, series

impedance, and shunt admittance of the

line. These equations include terms

neglected in the well-known expressions

used to calculate the line parameters,

enabling error limits to be assigned to

the latter.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G. F., On-Line Accuracy Assessment. for the Dual Six-Port ANA: Background and Theory.

One of the major challenges confronting

the microwave metrologist today is that

of providing an accuracy assessment for

the automatic network analyzer (ANA).

This paper provides the background and

theory for the recently developed

on-line solution new in use with the
CEEE Technical Progress Bulletin - May 1987

[Contact: Cletus A. Hoer, (303)

497-3705]

Page 1

Microwave & Millimeter-Wave , cont'd.

six-port systems at the National Bureau

of Standards.

[Contact; Cletus A. Hoer, (303)

497-351 1]

Hoer, C.A., On-Line Accuracy Assessment: for the Dual Six-Port ANA: Treatment of Systematic Errors. [Abbreviated version published in CPEM (Conference in Precision Electrical Measurements) Digest, pp. 238-239 (June 23-27,

1 986, NBS Gaithersburg, R. F. Dziuba,

Ed.); complete paper to be published in

a special issue of IEEE Transactions on

Instrumentation and Measurement.

]

Expressions are derived for calculating

systematic errors in dual six-port or

four-port measurements of reflection

coefficient and scattering parameters

due to imperfections in the transmission

line standard used to calibrate the

system. A new mathematical model for a four-port reflectometer makes it easier

to visualize and analyze these errors.

In this new model, two of the three

parameters needed to characterize a four-port can be determined without

standards. All imperfections in the

standard perturb only the third

parameter, which acts like an impedance

transformer.

[Contact; Cletus A. Hoer, (3 03)

497-3703]

Hoer, C.A., and Engen, G. F., Calibrating a Dual Six-Port or Four-Port for

Measuring Two-Ports With Any Connectors, to be published in lEEB-MTT

(Microwave Theory and Techniques Society) Symposium Digest.

A technique is described for calibrating

a dual six-port or four-port automatic

network analyzer (ANA) so that the scattering parameters or two-port devices

having any combination of connectors can

be measured. The technique is a generalization of the "thru-reflect-line"

calibration technique in which the

"thru” is replaced with a second length

of precision transmission line.

Hoer, C.A., and Engen, G. F., On-Line

Accuracy Assessment for the Dual SixPort ANA: Extensicm to Non-Mating

Connectors. [Abbreviated version

published in CPEM (Conference in Precision Electrical Measurements) Digest,

pp. 241-242 (June 23-27, 1986, NBS

Gaithersburg, R. F. Dziuba, Ed.); com- plete paper to be published in a special issue of IEEE Transactions on

Instrumentation and Measurement.]

In a series of companion papers, the

background, theory, and experimental

results have been presented for a realtime on-line accuracy assessment for the

dual six-port automatic network analyzer. As formulated, however, the

procedures are based on the "thrureflect-line" calibration procedure

which, in turn, assumes that the connector interface is of the "sexless" variety. This paper extends the methodology

to mating (e.g. , Type N) connector types

and also to "noninser table" adapters,

etc.

[Contact; Cletus A. Hoer, (303)

497-3705]

Juroshek, J. R., On-Line Accuracy Assessment for the Dual Six-Port ANA:

Experimental Results. [Abbreviated

version published in CPEM (Conference

in Precision Electrical Measurements)

Digest, p. 240 (June 23-27, 1986, NBS

Gaithersburg, R. F. Dziuba, Ed.); complete paper to be published in a special issue of IEEE Transactions on Instrumentation and Measurement.

]

When a calibration laboratory such as the National Bureau of Standards performs a measurement for a customer, the

accuracy which the laboratory attaches

to its measurements is a significant

part of the customer's report. In some

instances, the accuracy statement may be

more important to the customer than the

measurement itself. Modern automated

measurement systems can often perform

hundreds of measurements in a fraction
Page 1

2

CEEE Technical Progress Bulletin - May 1987

Microwave & Millimeter-Wavecont'd.

of a second. However, few, if any, of

these systems attempt to assess the

accuracy of those measurements in a real-time or on-line basis.

The accuracy of a modern automatic network analyzer is a function or a number

of variables. Connector quality, operator technique, system hardware, and

system calibration are just a few of the

many parameters that affect the day-today accuracy of an automated system.

This paper describes the results of the

current efforts at NBS to implement

on-line accuracy estimates for its dual

six-port network analyzers. Results are

presented showing uncertainty estimates

obtained in quasi-real time during the

measurement of customers' devices.

[Contact: John R. Juroshek, (303)

497-5362]

Judish, R.M., On-Line Accuracy Assessment for the Dual Six-Port ANA: Statistical Methods for Rand<w Errors.

[Abbreviated version published in CPEM

(Conference in Precision Electrical

Measurements) Digest, p. 237 (June

23-27, 1986, NBS Gaithersburg, R. F.

Dziuba, Ed.); complete paper to be

published in a special issue of IEEE

Transactions on Instrumentation and

Measurement.

]

A basic property of a measurement process is that repeated observations of

the same quantity will not give identical results due to the presence of ran- dom errors. In order to assess the

effects of random errors in our measurement process, we need to build in redundancy. This paper presents the statistical methods which converts the redundancy built into the Dual six-port automatic network analyzer (ANA) into meaningful estimates of the random errors.

[Contact: Robert M. Judish, (303)

497-3380]

Reeve, G.R., National Bureau of Standards Metrology CapcUbilities and Limitations at Millimeter Wave Frequencies.

The National Bureau of Standards (NBS)

establishes national reference standards

and measurement services, thus providing

a metrology base for U.S. industry and

technology. In order to provide proper

interfacing between subcontractors and

system integrators and to ensure that

performance goals are met, traceability

to NBS standards is frequently required

in government procurement contracts. In

the mil lime ter-wave frequency spectrum,

NBS has not established all of the

required metrology to meet the nfeeds of

industry or government for this technology. It is the intent of this paper to

describe the organizational, fiscal, and

technical demands of responding to the

challenges of mil lime ter-wave technology, and the need for timely input on

future metrology requirements which

present research and development activities may generate. A description of NBS

capabilities is given for those parameters and frequencies where measurement

services exist. Plans to develop new

standards and measurement services to

serve the mil lime ter-wave community are

also included.

[Contact: Gerome R. Reeve, (303)

497-3557]

Recently Published

Holt, D.R., and Hoer, C.A., Estimation

of True Power Ratios in Six-Port Network Analyzers Using Diode Detectors,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-34, No. 4, pp.

558-563 (December 1985). [A shortened

version of this paper appeared in the

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

Tampa, Florida, March 20-22, 1985, pp.

1 40-1 41.

]

A model for detector nonlinearity is

included in the determination of sixport parameters without using additional

standards. A computer simulation was performed assuming that the true power
CEEE Technical Progress Bulletin - May 1987 Page 1

Microwave & Millimeter-Wave , cont'd.

performed assuming that the true power

into each six-port detector is related

to the power observed by the detector.

Simultaneous estimation of the six-port

and detector parameters is accomplished

through a nonlinear least-squares algorithm. Results of the simulation com- pare the reflection coefficient T com- puted from corrected power readings and

r calculated from observed power readings . [Contact: Donald R. Holt, (303)

497-3574]

Laser Metrology

Recently Published

Rasmussen, A.L. , and Sanders, A. A.,

Transfer Standards for Energy and Peak

Power of Low-Level 1.064 MicroBeter

Laser Pulses and Continuous Wave Laser

Power, Optical Engineering, Vol. 25,

No. 2, pp. 277-285 (February 1986).

For the first time, traceable transfer

standards have been developed for measuring 1.064-ym laser pulses having

durations of about 10 to 100 ns, peak

power densities of about 10”® to 10”^

W/cm^, and energy density of about 10“^®

to 10”^^ J/cm^. These power and energy

transfer standards use silicon avalanche

photodiode (APD) and PIN photodiode

detectors, respectively (PIN refers to

the detailed semiconductor structure: a "sandwich" of p-conductivity type material, intrinsic layer, and n-conductivity type material). Ihese standards are

stable and have total uncertainties of

about 10%. The system for calibrating

them and other devices consists of a continuous wave (cw) Nd:YAG laser beam

acousto-optically modulated to provide

low-level laser pulses of known peak

power and energy. Using a pulse-height

analyzer readout, the PIN transfer standard system records each pulse, from

which the mean pulse energy and laser

stability may be evaluated. Using an

integrating voltmeter readout, this

system can measure energy or average

power. These pulsed and cw measurement

techniques can be extended to the visible and other near-infrared wavelengths . [Contact: Alvin L. Rasmussen, (303)

497-5367 or -3616]

Optical Fiber Metrology

Released for Publication

Day, G. W. , Conpact Fiber Sensors for

the Measurement of Low Level Electric

Currents, to be published in the

Proceedings of the 4th International

Conference on Optical Fiber Sensors,

Tokyo, Japan, October 1986.

Recent progress in the development of

fiber current sensors includes the fabrication of low-loss, low-birefringence,

3-cm diameter coils by annealing, and

the demonstration of a noise equivalent

current of 180 yA per root Hertz.

[Contact: Gordon W. Day, (303)

497-5204]

Day, G.W., Vesser, L.R., Chandler, G.I.,

and Cernosek, R.W., Progress in the

Design of Optical Fiber Sensors for the

Measurement of Pulsed Electric Currents.

Ihe state of the art in the design of

fiber sensors for pulsed electric cur- rents is reviewed. Some of the more

useful configurations are described and

compared. Transfer functions are com- puted and used to illustrate the effect

of linear birefringence and twisting on

the characteristics of the sensors. Ihe

technique of annealing bend-induced

birefringence is described and its present capabilities indicated. An analysis

of the ultimate limits to noise equivalent current is given, indicating that

several orders of magnitude Improvement

should be obtainable.

[Contact: Gordon W. Day, (303)

497-5204]

Engelsrath, A., Danielson, B.L. , and
Page 1

4

CEEE Technical Progress Bulletin - May 1987

Optical Fiber Metrology ^ cont'd.

Franzen, D.L. , Attenua1:i<» Measurements on Deformed Optical Fibers, to

be published as NBSIR 86-3052.

Attenuation measurements were made on

several different optical fibers subjected to bending, tension, twisting,

and overlapping. The measurements were

performed with an optical time-domain

reflectometer which gives a partial

separation between the various contributions to the measured deformation loss.

The graded- and step-index multimode

fibers had a variety of different dimensions and coatings. The results of

bending attenuation are compared with

models and other reported e^qjerimental

loss data. Based on the results of the

present experiments, an empirical model

has been derived which permits a prediction of the smallest bend radius consistent with a given allowed attenuation.

[Contact: Bruce L. Danielson, (303)

497-5620]

Recently Published

Rasmussen, A.L. , and Franzen, D.L.

,

Low-Level Germanium Detector Transfer

Standard at 1.064 -^m, NBSIR 85-3041

(January 1986).

Two PIN germanium photodiodes have been

calibrated in the 1- to 250-fJ/cm^ range

with 1 5 percent uncertainty for 1 0- to

1 00-ns duration, 1.064-ym laser pulses

[PIN refers to a "sandwich” structure of

a layer of p-conductivity type material,

an intrinsic layer, and an n-conductivity type layer] . To do these calibrations, we used (1 ) a continuous wave

Nd:YAG laser beam acous to-optically

modulated and a PIN silicon photodiode

transfer standard to provide low-level

laser pulses of known energy and (2) a pulsed 1.06-ym LED beam. A 1-cm^ collecting lens and a ground glass diffuser

were placed in front of each detector to

improve sensitivity and spatial uniformity, respectively. In the future, these

detectors may also be useful as transfer

standards at wavelengths out to 1.7 ym.

[Contact: Alvin L. Rasmussen, (303)

497-5367 or -3616]

Electro-Optic Metrology

Released for Publication

Peterson, R.L. , Numerical Study of

Currents and Fields in a Semiconducting

Optical Detector.

A numerical study of the current, field,

and carrier density distributions within

an optical detector is presented. Ihe

detector - an interdigitated Schottky

barrier diode - is made of semiconductor

overlaid with metallic fingers of

alternating voltage bias. The Poisson

and continuity equations for electrons

and holes are treated in two dimensions.

A modified successive line

over-relaxation method, faster than a capacitance matrix method, is developed

as the Poisson solver. A simple

alternative to the Scharfetter-Gummel

treatment of current density is also

introduced. Steady-state cases with and

without optical illumination, and

transient responses to picosecond

optical pulses, are studied. The

steady-state current shows near

saturation with increasing voltage, as observed experimentally. Hie calculated

typical response of this detector to a picosecond optical pulse is a current

pulse lasting on the order of 10 ps.

[Contact: Robert L. Peterson, (303)

497-3750 or -3227]

Young, M., and Weppner, M., Hybrid

Computer-Optical Processing With Inexpensive Liquid Crystal Television.

We -describe a computer-optical processing system that uses an inexpensive

liquid crystal (LCD) television monitor

and a selective holographic filter for

coherent pattern recognition. Specifically, we use a digital computer to

generate an edge-enhanced image of an

object, expose a Fourier transform hologram of this image, and use the hologram

as a sort of matched filter for recognizing the original object in real
CEEE Technical Progress Bulletin - May 1987 Page 1

5

Electro-Optic Metrology , cont'd.

time.

[Contact: Matt Young, (303) 497-3223 or

-5342]

Recently Published

Hebner, R.E. , Electro-Optical Measurement Techniques, Fast Electrical and

Optical Measurements, Vol. 1, pp. 5-25

(Martinus Nijhoff, Boston, MA, 1986)

[Proceedings of the NATO Advanced Study

Institute on Fast Electrical and Optical Diagnostic Principles and Techniques] . This paper reviews the use of the

Faraday effect, the Pockels effect, and

the Kerr effect to measure electric

fields, magnetic fields, voltages,

currents, and space charge density.

Each of the three effects is introduced

conceptually, the use of Jones or

Mueller matrices to describe the optical

system is presented, and some

applications of these effects are

described.

[Contact: Robert E. Hebner, (301)

975-2403]

Other Fast Signal Topics

Released for Publication

Jesch, R.L., Fixed and Base Station FN

Transmi tters

This document establishes minimum

performance requirements and methods of

test for fixed and base station

frequency-modulated (FM) transmitters.

The standard applies primarily to the

law enforcement community, and as such

covers the four frequency bands 25 to 50

MHz, 150 to 174 MHz, 400 to 512 MHz, and

806 to 866 MHz. This standard

supersedes NILECJ-STD-0201 . 00 Fixed and

Base Station FM Transmitters.

[Contact: Ramon L. Jesch, (303)

497-3496]

Lawton, R.A., and Meyer, K. , Waveform

Standards for Electro-Optics: A Pulse

Duration Comparison.

A transfer standard has been developed

for use in comparing the measurement

capability of the Automatic Pulse

Measurement System (APMS) at the

National Bureau of Standards to that of

recently developed electro-optic

samplers. This transfer standard is a comb generator driven by a 90-MHz sine

wave. Measurements were made of the

pulse waveform of the comb generator

output with both the APMS and an

electro-optic sampler. A comparison was

then made of the pulse duration (full

width at half maximum) obtained in the

two waveform measurements. The result

was a duration of 102 ps as measured by

the APMS and 112 ps as measured by the

electro-optic sampler. This agreement

is well within the measurement

uncertainty of the two systems. The

s ignal- to-noi se ratio at the comb

generator input was improved over that

of previous measurements, and a correction for pulse broadening was made

to achieve this result. The pulse

broadening was caused by the impedance

mismatch between the sampler and the

transmission system (50 ohms).

[Contact: Robert A. Lawton, (303)

497-3339]

McDonald, D.G.

,

High Accuracy in

Physics (submitted as a letter to

Science )

Philip Abelson, in an editorial in

Science [232, 693 (1986)], reviews the

National Research Council report

"Physics Through the 1990s" and writes

"Of all the quantities in physics, time

is by far the most accurately measured."

I argue that the Josephson effect has

comparable accuracy.

[Contact: Donald G. McDonald, (303)

497-51 1 3]

Recently Published

Laug, O.B., Stenbakken, G.N. , and Leedy,

T.F., Electrical Performance Tests

for Audio Distortion Analyzers, NBS

Technical Note 1219 (January 1986)

[previously published as NBSIR 85-3269

(November 1 985) ]
Page 1

6

CEEE Technical Progress Bulletin - May 1987

Other Fast Signal Topics, cont'd.

Electrical performance test procedures

for audio distortion analyzers were

developed by the National Bureau of

Standards for the U. S. Army Communications-Electronics Command. The report

provides detailed, step-by-step test

procedures that are based on specifications supplied by the Army for purposes

of evaluating audio distortion analyzer

bid samples. Examples of data sheets

and tables are also provided for recording interim and final results.

The report discusses the philosophy of

each measurement procedure with a view

toward providing an understanding of the

basic metrology required to perform the

measurements. In addition, the sources

of measurement error are discussed. Ihe

primary applications and basic principles of modern audio distortion analyzers are also presented.

[Contact: Owen B. Laug, (301)

975-241 2]

Miller, C.K.S., Taggart, H.E., and

Bensema, W.D. , Mobile FM Transceivers, National Institute of Justice

Standard-0210.00 (May 1986).

The purpose of this document is to establish performance requirements and

methods of test for non-trunked, frequency modulated (FM) mobile transceivers. This standard applies to transceivers which either do not have special

subsystems such as selective signaling

or voice privacy, or in which such subsystems are bypassed or disabled during

testing for compliance with this standard. This standard supersedes NILECJSTD-0202.00, Mobile FM Transmitters and

NILECJ-STD-0207.00, Mobile FM Receivers.

[Contact: Charles K. S. Miller, (303)

497-31 31]

Miller, C.K.S., Taggart, H.E., Jesch,

R.L., and Wainright, A.E., Personal/Mobile FM Transceivers, National

Institute of Justice Standard-0224.00

(May 1986)

.

The purpose of this document is to

establish performance requirements and

methods of test for non-trunked, frequency modulated (FM) personal/mobile

transceivers. This standard applies to

personal transceivers with rechargeable

batteries and personal/mobile transceivers which use a charger/mobile unit,

with or without an rf power amplifier,

and which either do not have special

subsystems such as selective signaling

or voice privacy, or in which such subsystems are bypassed or disabled during

testing for compliance with this standard. The individual personal FM transceivers are expected to meet the minimum

performance requirements as established

in NIJ Standard-0209.01 for Personal FM

Transceivers prior to being tested for

the requirements of this standard. Due

to the lack of use of personal/mobile

transceivers in the 25 to 50 MHz and 806

to 866 MHz frequency bands, requirements

for these transceivers are not included

in this standard.

[Contact: Charles K. S. Miller, (303)

497-3131]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Kelley, E.F., Hebner, R.E., Anderson,

W.E., Lechner, J.A., and Blue, J.L. , The Effect of an Oil-Paper Interface

Parallel to an Electric Field on the

Breakdown Voltage at Elevated Temperat u r e s . This paper reports the measurements made

in a study of the electrical breakdown

location in the vicinity of an oil-paper

interface over the temperature range

from room temperature to 150°C. The

data indicate that the electrical breakdown occurred at the interface from 15%

to 43% of the time, depending on the

details of the particular set of measurements. A theoretical analysis shows

that this experimental result is consistent with the electric field enhancement, the area over which the enhancement occurs, and the spread in the
CEEE Technical Progress Bulletin - May 1987 Page 1

Power Systems Metrology ^ cont'd.

breakdown voltages for nominally identical tests.

[Contact; Edward F. Kelley, (301)

921-31 21 ] Kelley, E.F., Hebner, R.E. , FitzPatrick,

G.J., Forster, E.O., The Effect of

Pressure on Streamer Initiation In

n-Hexane, to be published in the

Proceedings of the 1 986 IEEE

International Symposium on Electrical

Insulation, Washington, DC, June 9-12,

1 986.

High-speed photographs of the breakdown

process at pressures in the range 0.1 to

1 0 MPa indicate that the structure of

the streamer changes with the pressure.

The typical structures associated with

primary streamers are no longer visible

at elevated pressures. Over this range,

the average cathode streamer velocity

increases from about 0.2 5 km/s to 2.5

km/s. The anode streamer, however, does

not generally exhibit a bushy primary

streamer structure, and its velocity

appears to be less affected by pressure.

[Contact: Edward F. Kelley, (301)

975-2424]

Misakian, M. , Power Frequency Electric

and Magnetic Field Measurements: Recent History and Measurement Standards, to be published in the Proceedings of the 1 986 Workshop and Symposium of the National Conference of

Standards Laboratories, Gaithersburg,

Maryland, October 6-9, 1 986.

During the early 1970s, reports appeared

in the literature which raised questions

regarding possible biological effects

from exposure to power , frequency electric and magnetic fields in the vicinity

of high-voltage transmission lines and

in substations. In response to the

concerns generated by these reports,

numerous bioeffects studies were initiated in the United States in the mid1 970s by government and private agencies; a number of studies are still

underway. Sponsored by the Department

of Energy, the NBS Fields Project took

an early interest in the instrumentation, calibration procedures, and measurement techniques for characterizing

the electrical parameters in the vicinity of power lines and in laboratory

apparatus designed to simulate the electrical environment for bioeffects

studies. In the mid-1970s, there was no

standard which provided guidance for

measurement of the ac fields near power

lines or for calibration of instrumentation used for such measurements. Similarly, no guidance was available for

measuring the fields in biological exposure systems. Today, a U. S. (IEEE)

standard exists for measurement of ac power line fields and an NBS technical

note is available which describes the

measurement of electrical parameters in

biological exposure systems. This paper

focuses on selected results of NBS

studies which have been incorporated

into the U.S. standard for measurement

of power frequency electric and magnetic

fields and the NBS technical note for

measuring electrical parameters in bioeffects exposure systems.

[Contact; Martin Misakian, (301)

975-2426]

Misakian, M., McKnight, R.H., and Fenimore, C., Calibration of AspiratorType Ion Counters and Measurement of

Unipolar Charge Densities.

The characterization of a parallel-plate

apparatus which can produce a unipolar

charge density that is suitable for

calibrating aspirator-type ion counters

operating in the ground plane is described. The influence of a dc electric

field, air motion. Coulomb repulsion,

and diffusion on the transport of ions

into the ion counter are examined to

determine their effects on instrument

calibration and measurements in the

vicinity of high voltage dc transmission

lines. A charge density which is known

with an uncertainty of less than ±9% is

used to check the performance of an ion

counter with and without a duct at its

entrance.

[Contact: Martin Misakian, (301)

975-2426]
Page 1

8

CEEE Technical Progress Bulletin - May 1987

Power Systems Metrology , cont'd.

Van Brunt, R.J. , and Sauers, I. , Gas

Phase Hydrolysis of SOF2 and SOF^, to

be published in the Journal of Chemical

Physics (Publication of the American

Institute of Physics)

.

The rates for gas-phase hydrolysis of

SOF^ ( thionylf luoride ) and SOF^^

( thi onyl te tr af luo r i de ) have been

measured at a temperature of 298 K. Ihe

second order rate constant for SOF2 hydrolysis in SFg buffer gas was found

to have the value (1.2 ± 0.3) x 10“ ^3

cm^/s which agrees with previous

estimates of Sauers et al. , but is three

orders of magnitude lower than the value

obtained by Ruegsegger et al. at 340 K.

The rate constant for SOF^^ hydrolysis

has not previously been measured, and

its value in both SF, and buffer

gases was found here to be (1.0 ± 0.3) x 10“^^ cm^/s.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Recently Published

Anderson, W.E., Ramboz , J.D., and

Ondrejka, A.R., Final Report.: Technical Contributions to the Development

of Incipient Fault Detection/Location

Instrumentation, NBSIR 86-3392 (April

1 986) . The transmission of electrical energy by

use of underground cables is increasing.

Fault location techniques have certain

limitations; incipient fault detection

and location would help reduce the

maintenance cost of these lines as well

as improve the reliability of service.

This report discusses some test results

related to radio-f requency (rf) probing

techniques applied to high-voltage

transmission lines. The high-frequency

losses and attenuation in high-voltage

cables places certain ultimate

limitations on rf-probing techniques for

incipient fault detection. Time domain

reflectrome try methods were employed to

assess the rf-transmission properties of

high-voltage cables at frequencies up to

6 GHz. Fast Fourier transform deconvolution was used to obtain loss measurements as a function of frequency. The

loss mechanisms were identified. The

measurement hardware and methods are

discussed as well as analysis approach

leading to the conclusions.

[Contact: William E. Anderson, (301)

975-2423]

Hebner, R.E., Electro-Optical Measnrement Techniques, Fast Electrical and

Optical Measurements, Vol. 1 , pp. 5-25

(Martinus Nijhoff, Boston, MA, 1986)

[Proceedings of the NATO Advanced Study

Institute on Fast Electrical and Optical Diagnostic Principles and Techniques] . This paper reviews the use of the Faraday effect, the Pockels effect, and the

Kerr effect to measure electric fields,

magnetic fields, voltages, currents, and

space charge density. Each of the three

effects is introduced conceptually, the

use of Jones or Mueller matrices to describe the optical system is presented,

and some applications of these effects

are described.

[Contact: Robert E. Hebner, (301)

975-2403]

Kelley, E.F., Hebner, R.E., Fitzpatrick,

G. J. , and Forster, E.O, The Effect of

Pressure on Streamer Initiation in

n-Hexane, Proceedings of the 1986

IEEE International Symposium on Electrical Insulation, Washington, DC, June

9-12, 1986, pp. 66-68.

High-speed photographs of the breakdown

process at pressures in the range 0.1 to

10 MPa indicate that the structure of

the streamer changes with the pressure.

The typical structures associated with

primary streamers are no longer visible

at elevated pressures. Over this range,

the average cathode streamer velocity

increases from about 0.2 5 km/s to 2.5

km/s. Ihe anode streamer, however, does

not generally exhibit a bushy primary

streamer structure, and its velocity

appears to be less affected by pressure. [Contact: Edward F. Kelley, (301)

975-2424 or -5826]
I CEEE Technical Progress Bulletin - May 1987 Page 1

9

Power Systems Metrology , cont'd.

Misakian, M., McKnight, R.H, , and Fenimore, C., Calibration of AspiratorType Ion Counters and Measurement of

Unipolar Charge Densities, NBS

Technical Note 1223 (May 1986),

The characterization of a parallel-plate

apparatus which can produce a unipolar

ion density that is suitable for calibrating aspirator- type ion counters

operating in the ground plane is

described. The influence of a dc electric field, air motion. Coulomb repulsion, and diffusion on the transport of

ions into the ion counter are examined

to determine their effects on instrument

calibration and measurements in the

vicinity of high voltage dc transmission

lines. An ion density which is known

with an uncertainty of less than ±9% is

used to check the performance of an ion

counter with and without a duct at its

entrance. The results of laboratory

measurements of ion density under a monopolar high voltage line, which com- plement the studies with the parallelplate apparatus, are also described.

[Contact: Martin Misakian, (301)

975-2426]

Siddagangappa, M.C., Van Brunt, R.J. , and Phelps, A.V. , Influence of Oxygen

on the Decomposition Rate of SFg in

Corona, Proceedings of the 1 986 IEEE

International Symposium on Electrical

Insulation, Washington, DC, June 9-12,

1 986, pp. 225-229.

The absolute charge rates-c f-production

of discharge generated gaseous byproducts SOF^^, SOF

2

, SO

2F2

, SO

2

, and CO

2 have been measured in compressed SF^/O^

mixtures at a constant pressure. The

normalized total rate of oxyfluorides

plus SO

2 production per SF^ mole does

not increase significantly with the

addition of O

2 up to 50% in SF^ and

increases slowly for [02l>50%. The

formation of SO^ in all SF^/0 mixtures

was insignificant. Instead, the deposition of sulfur (S- ions) on the anode

increased with O2 concentration. The

yield of CO2 from oxidation of carbon on

the electrode was also observed to

increase with O2 content. Probable

mechanisms for the formation of SOF

2

, SO2 F

2

, SOFj^, S” ions, and CO are discussed. The measured by-product yield

as a function of percent O

2 Is compared

with the calculated maximum rate of SF^

decomposition induced by electron collision in the discharge. The theoretical model used to calculate the rate of

SF^ decomposition in SFg/02 mixtures is

briefly discussed. As observed for

SFg/N

2 and SF^/Ne mixtures, the primary

effect of O

2 on SF^ decomposition appears to be retardation of the recombination of SFg dissociation products due

to dilution.

[Contact; Richard J. Van Brunt (301)

975-2425]

Van Brunt, R.J. Water Vapor-Enhanced

Electron-Avalanche Growth in SF_ for

Nonuniform Fields, J. Appl. ^ys.,

Vol. 59, No. 7, pp. 2314-2323 (April 1,

1986)

When water vapor content is increased

from 10 to 100 ppm in SF^ at pressures

from 200 to 300 kPa, a dramatic enhancement occurs in the mean size of electron

avalanches formed near a positive-point

electrode. Although this effect can be

attributed to a change in gas composition, it is not due to a change in the

ionization rate for the gas. It is

proposed that the avalanche enhancement

is due primarily to an increase in the

probability for initiating electron

release from minor negative ions associated with water vapor that collisionally

detach more readily at a given field

strength than the predominant negative

ions associated with SF^. The profiles

of the electron avalanche size distributions exhibit a monotonic decrease of

probability with increasing number of

electrons for avalanches with fewer than

10^. These peaks are not consistent

with the behavior expected from a stochastic model of electron-avalanche

growth in nonuniform electric fields

which neglects the influence of space

charge.
Page 20 CEEE Technical Progress Bulletin - May 1987

Power Systems Metrology , cont'd.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Pulse Power Metrology

Recently Published

Hebner, R.E., High-Speed Data Systems

for Pulsed Power Applications,

Proceedings of the 5th IEEE Pulsed

Power Conference, Arlington, Virginia,

June 10-12, 1985, pp. 168-171 (May

1 986) . Data-aoquisition systems for pulsed

power applications generally must

provide nanosecond resolution, operate

in an environment of high levels of

electromagnetic interference, and

acquire significant amounts of data

simultaneously. To meet these demands,

electrical systems have been used and

optical systems are being introduced.

Voluntary standards have been and are

being developed which categorize the

errors in the electrical measurement

systems. Optical systems are in too

early a state of development for similar

s tandardization.

[Contact: Robert E. Hebner, (301)

975-2403]

Superconductors

Released for Publication

Dragomirecky , M. , Minervini, J.V. , Ekin,

J. W., Goldfarb, R.B., and Clark, A.F.,

Losses In a Nb-Ti Superconductor as

Functions of AC Field Amplitude and DC

Transport Current, to be published in

the Proceedings of the 11th International Cryogenic Engineering Conference

- ICEC 11, Berlin, West Germany, April

2 2-25, 1986, Butterworth & Co. (Publishers) Ltd.

Hysteretic shielding losses and transport losses were measured in a multifilamentary Nb-Ti superconducting coil

as functions of transverse ac field

amplitude and dc transport current. Ihe

conductor was biased with a dc field.

There was significant agreement with the

predictions of Minervini' s two-dimensional theoretical model.

[Contact: John W. Ekin, (303)

497-5448]

Ekin, J.W., Goodrich, L.F., Moreland,

J. , Pittman, E.S., and Clark, A.F.,

Electro-Mechanical Properties of

Superconductors for High Energy Physics

Applications, to be published as NBSIR 86-3059.

Ihis report covers the first nine months

of a 33-month project to establish a systematic base of experimental data on

electro-mechanical effects in

superconducting wire and cables for

high-energy-physics magnet

applications.

[Contact: John W. Ekin, (303)

497-5448]

Goldfarb, R.B, and Ekin, J.W., Hysteresis Losses in Fine-Filament InternalTin Superconductors.

Hysteresis losses were measured on a series of fine-filament Nb 3 Sn superconductors made by the internal-tin

process. Hysteresis was measured as a function of filament diameter and interfilament separation using a vibratingsample magnetometer in transverse field.

Losses were greater than expected com- pared to predictions of the criticalstate model that expresses loss as a function of filament diameter. Micrographs of the reacted wire cross sec- tions show some interfilament bridging

for all wires. This bridging gives rise

to effective filament diameters that are

greater than actual diameters. The

critical interfilament separation, above

which the losses would be expected to

follow the critical-state model, was

determined.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Moreland, J. , Squeezable Junctions for

Electron Tunneling and Surface Electric

Field Experiments.
CEEE Technical Progress Bulletin - May 1987 Page 21

Superconductors , cont'd.

Mechanically adjusted junctions can be

used for electron tunneling or surface

electric field measurements. This

tutorial paper discusses what squeezable

electron tunneling (SET) junctions are

and how measurements with SET junctions

can contribute to the characterization

of superconductors and semiconductors

and to our understanding of the surface

physics of conducting materials. An

outline of how to construct a simple SET

junction is provided.

[Contact; John Moreland, (303)

497-3641]

Recently Published

Ekin, J.W., Moreland, J. , and Brauch,

J.C., Electromechanical Properties of

Superc<xiductors for DOE Fusion Applications, NBSIR 86-3044 (March 1986).

This is an interim report presenting

data on superconductor performance under

mechanical load, data needed for the

selection of superconductors and the

mechanical design of superconducting

magnets for DOE fusion energy systems.

A further aim of the reported research

is to measure and understand the electromechanical properties of promising

new superconductor materials with strong

application potential at high magnetic

fields. Results include the following.

The first studies of strain vs. critical-current were made on a Chevrel-phase

superconductor, PbMo^Sg. Chevrel-phase

superconductors were found to have a large strain effect, comparable in magnitude to that in A-15 superconductors

like NbgSn. Electromechanical-property

measurements of an experimental liquidtin-infiltrated NbgSn conductor showed

it to have an irreversible strain limit

twice as large as that of bronze-process

superconductors and a significantly

higher overall critical-current density;

the liquid-infiltration process thus has

the potential for development of a practical Nb^Sn conductor with both superior

critical-current density and extremely

good mechanical properties. Electromechanical parameters were obtained on several Nb 3 Sn conductors that are candidate materials for superconducting

fusion magnets, including conductors

fabricated by the bronze, internal-tin,

and jelly-roll processes. Thermal con- traction data are reported on several

new structural materials for superconductor sheathing and reinforcement, and

a new diagnostic tool for probing the

energy gap of practical superconductors

has been developed using electron tunneling.

[Contact; John W. Ekin, (303)

497-5448]

Goldfarb, R.B., Transient Losses in

Superconductors , NBSIR 86-3053 (June

1 986) . Under steady-state conditions, there are

no losses in superconducting wires.

However, when subjected to alternating

or transient magnetic fields or transport currents, losses in type-II superconductors can become significant. This

report deals with hysteresis losses at 4

K measured by magnetization and complex

magnetic susceptibility. The theoretical and experimental relationships between ac susceptibility and magnetization as functions of dc field were

examined in terms of the critical-state

model as developed by Carr and Clem.

Minor-loop hysteresis loss is shown to

be obtainable by direct measurement of

loop area, from the imaginary component

of ac susceptibility, and from the

reversible susceptibility plus the

critical current density or full-penetration field. ftysteresis and transport

losses measured simultaneously in a Nb-Ti superconducting coil were found to

agree substantially with the predictions

of Minervini's two-dimensional model.

Hysteresis loss measurements in a series

of fine-filament Nb^Sn superconductors

showed that the effective filament

diameter is a function of interfilament

separation and local area ratio of

matrix material to Nb. A review of

internal fields in superconductors

showed the importance of demagnetization

factors and internal fields for the
Page 22 CEEE Technical Progress Bulletin - May 1987

Superconductors , cont'd.

correct analysis of magnetic data, A

theoretical method of calibrating ac susceptometers for cylindrical specimens, which is based on a mutual-inductance calculation, was developed.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Magnetic Materials and Measurements

Released for Publication

Goldfarb, R.B., Internal Fields in

Magnetic Materials and Superconductors.

This paper reviews some of the concepts

needed for the correct analysis of magnetization data, both for magnetic materials and superconductors. Demagnetization factors, initial suceptibilities,

and hysteresis losses are discussed,

[Contact: Ronald B, Goldfarb, (303)

497-3650]

Recently Published

Goldfarb, R.B., Rao, K.V. , and Chen,

H.S., New Magnetic Phase Diagram of

the Amorphous Pd-Fe-Si Ferroglass Alloy

System, Journal of Magnetism and

Magnetic Materials, Vol. 54-57, pp,

1 11-1 12 (1986) . The magnetic phase diagram of amorphous

^^8 0 “xFexSi 2 0 examined. The

peak in the imaginary component of ac susceptibility was used to determine the

ferromagnetic-like/spin-glass transition

temperatures Tfg, it was found that

the Tfg line is highly field dependent and rises with increasing iron

concentration,

[Contact: Ronald B, Goldfarb, (303)

497-3650]

Other Electrical Systems Topics

Recently Published

Hebner, R.E., Stenbakken, G.N., and

Hillhouse, D.L, , Report, of Tests on

Joseph Newman's Device, NBSIR 86-3405

(June 1 986)

.

This report describes electrical measurements performed by the National

Bureau of Standards on Joseph Newman's

device. The tests were conducted between March and June 1986 at the request

of the U.S. Patent and Trademark Office

in accordance with several court orders.

As a Federal science and engineering

research laboratory that specializes in

measurements and is responsible for

maintaining U.S. standards for electricity, NBS has extensive experience

and facilities for measuring the performance of electrical equipment.

The purpose of the measurements was to

test the inventor's claim that the output power from the device was greater

than the power which was supplied to the

device from a battery pack. NBS was not

requested to examine the theory behind

the operation of the device.

The tests consisted of electrical measurements of the power drawn from the

battery pack by the device (input power)

and separate as well as simultaneous

measurements of the output power. These

measurements were done with several

different sets of conventional, welldocumented test instruments. Due to the

specialized nature of the equipment,

however, the instrumentation would not

generally be found in most research

laboratories. The electrical characteristics of the device, especially the

sharp spikes in input and output waveforms, necessitated a variety of extensive and careful measurements and ex- perimental checks to ensure that valid

data resulted. Equipment selection was critical.

The device's efficiency — defined as the ratio of output power to input power — varied depending on the voltage, load

on the device, and the degree of degradation of the tape on the commutator of

the device. If the device simply transferred the power from the batteries to

the load, its efficiency would be 100%;

in no case did the device's efficiency

approach 100%.
CEEE Technical Progress Bulletin - May 1987 Page 23

Other Electrical Systems Topics , cont'd.

At all conditions tested, the input

power exceeded the output power. That

is, the device did not deliver more

energy than it used.

[Contact; Robert E. Hebner, (301)

975-2403]

ELfiCTROMAGHETIC INTERFERBK:E

Radiated Electromagnetic Interference

Released for Publication

Crawford, M.L., and Koepke, G.H., EMR

Test Facilities - Evaluation of Reverberaticm Chambers Located at tISWC,

Dahlgren, VA, to be published as NBSIR 86-3051.

This report describes measurement procedures and results obtained from evaluating the reverberation chamber facilities

located at the Naval Surface Weapons

Center, Dahlgren, Virginia. Two chambers were tested referred to as 1 ) the

half chamber, and 2) the full chamber.

The facilities were developed by the

NSWC for use in measuring and analyzing

the electromagnetic susceptibility/ vulnerability of weapon systems and the

shielding effectiveness of enclosures

and shielding materials. A brief description of each facility is given,

including the instrumentation used for

performing the evaluation and calibration of the facilities by the National

Bureau of Standards. Measurements described include: 1) evaluation of the

chamber's transmitting and receiving

antennas voltage standing wave ratios;

2) measurement of the chamber's insertion loss or coupling efficiency versus

frequency; 3) measurement of the effectiveness of the chamber tuners; 4) determination of the electric-field uniformity in the chamber's test zones

versus frequency; 5) determination of

the absolute amplitude calibration of

the test electric fields in the chambers, based upon received power measurements of the reference antenna and calibrated dipole probe antenna measurements; and 6) comparison of the response

of reference equipment under test to

test fields established inside the NSWC

reverberation chambers and the NBS re- verberation chamber. These results can

then be compared to anechoic chamber

results. Conclusions given indicate

that the NSWC chambers can be used at

frequencies down to approximately 150

MHz. Estimates are given of the measurement uncertainties derived empirically from the test results.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H.,

Evaluation of Reverberation Chamber

Method for Pulsed RF Inusunity Testing.

This paper describes the evaluation of

the performance characteristics of a reverberation chamber excited by pulsed

radiofrequency (rf) energy (pulse duration 1.0 ys to 10 ys, 0.001 duty cycle)

in the frequency range 0.9 GHz to 10

GHz. The purpose of this work is to

investigate the potential use of a re- verberation chamber for pulsed rf immunity testing of electronic equipment.

Information given includes a description

of the reverberation chamber evaluated,

the instrumentation used for performing

the measurements, and results obtained

showing the pulse dispersion characteristics of the chamber.

[Contact; Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H., Performing EM Susceptibility/Vulnerability

Meaisureraents Using a Reverberation

Chamber.

This paper discusses the design, evaluation, and use of a reverberation chamber

for performing electromagnetic susceptibility (EMS) measurements of electronic

equipment. Included are brief descriptions of the test procedures, application advantages and limitation, some EMS

test results, intrepretation of test

results relative to free-space test

methods, and an estimate of measurement

uncertainties
Page 24 CEEE Technical Progress Bulletin - May 1987

Radiated EMI , cont'd.

[Contact: Myron L. Crawford, (303)

497-5497]

Cruz, J.E., and Larsen, E.B., Assessment. of Errors for MlLr-STD-461 /462

Measurements, to be published as NBS

Technical Note 1300.

This report deals with the instrumentation and equations for several systems

used by the U.S. Army for electromagnetic compatibility (EMC) testing and

calibrations. Most testing for MIL-STD461/462 is performed in a shielded

enclosure (screenroom) rather than an

open field site, v^ich leads to uncertainty in the measurement of emissions

from electronic equipment, or the sus- ceptiblity of equipment to radiation.

Assessment of error bounds by the

National Bureau of Standards is covered

in this report, and suggestions are

given for improving the measurements.

Four areas of concern were studied as follows: (a) EM fields generated in a parallel plate transmission line (stripline) , (b) EM fields beneath a singlewire transmission line in a screenroom

(longwire line), (c) determination of

antenna factors for EMI antennas located

in a screenroom, and (d) calibration of

EMI receivers to measure broadband

impulsive signals. Most EMC antennas at

NBS are calibrated at an open field site

or in an anechoic chamber. This report

presents antenna factors determined in a typical screenroom using the two-antenna

method, and comparison with those determined at an open field site. The video

pulse technique prescribed in MIL-STD462 tor calibrating EMI receivers was also evaluated. Four different methods

were tested for comparison with the

MIL-STD approach. They are defined and

discussed in this report.

[Contact: Jose E. Cruz, (3 03)

497-3763]

Hill, D.A., Radio-Wave Propagation

From a Forest to a Clearing.

Kirchhoff integration over a vertical

aperture is used to obtain a simple

expression for radio-wave propagation

from a forest to a clearing. Numerical

results are presented for a frequency of

10 MHz, and the classical recovery

effect is observed. Numerical comparisons are made with previous integral

equation and analytical continuation

methods. The agreement with the integral equation method is good, but the

analytical continuation method predicts

higher field strengths. For a very thin

forest, all three methods agree.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Cavcey, K. H., Cosplliig

Between Two Antennas Separated by a

Planar Interface.

The plane-wave spectrum technique is

used to analyze the coupling between a pair of antennas separated by a planar

interface. Multiple reflections between

the antennas or between either antenna

and the interface are included in the

formulation. The formulation is used to

model detection of buried objects, and a low-frequency metal detector example is

analyzed in detail. For a transmitting

loop and a buried oblate spheroid, the

plane-wave spectrum technique is shown

to agree with well-known quasi-static

approximations. Some experimental

results from a 3 -kHz metal detector are

also shown.

[Contact: David A. Hill, (303)

497-3472]

Kanda, M. , and Driver, L. , An Isotropic Electric-Field Pr<A>e With Tapered

Resistive Dipoles for Broadband Use,

100 kHz-18 GHz.

A new broadband electric-field probe,

capable of accurately characterizing and

quantifying electromagnetic fields, has

been developed at the National Bureau of

Standards. The probe's 8-mm resistively

tapered dipole elements allow measurement of electric fields between 1 and

1600 V/m from 1 MHz to 15 GHz, with a
CEEE Technical Progress Bulletin - May 1987 Page 25

Radiated EMI , cont'd.

flatness of ±2 dB, A mutually orthogonal dipole configuration provides an

overall standard deviation in isotropic

response, with respect to angle, that is

within ±0.3 dB. Both the theoretical

and developmental aspects of this prototype electric-field probe are discussed

in this paper.

[Contact: Motohisa Kanda, (303)

497-5320]

Kanda, M., and Orr, D.R., Near-Fleld

Gain of a Horn and an Open-Ended

Waveguide: Comparison Between Theory

and Experiment.

This paper gives the theory and

supporting experimental measurements for

the near-field gain of a rectangular

pyramidal horn and an open-ended

waveguide (OEG) at 450 MHz . The

empirical near-field gain for the OEG is

derived from experimental results

obtained by a two-antenna method at

about 2 GHz. The theoretical near-field

gain for the rectangular pyramidal horn

is derived from Schelkunof f ' s formula.

Two independent near-field gain

measurements of these antennas are made

using a three-antenna method and a transfer-standard-probe method. The

discrepancy between theoretical and

experimental results is typically less

than ±2 dB.

[Contact: Motohisa Kanda, (303)

497-5320]

Ma, M.T., and Kanda, M. , Electromagnetic Compatibility and Interference

Metrology, to be published as NBS

Technical Note 1 099.

The material included in this report is

intended for a short course on electromagnetic compatibility/interference

(EMC/EMI) metrology to be offered jointly by the staff of the Fields Characterization Group and the Interference Characterization Group of the Electromagnetic Fields Division. The purpose of

this short course is to present a review

of some of the radiated EMC/EMI measurement methods, to which the National

Bureau of Standards (NBS) at Boulder,

Colorado has made significant contributions during the past two decades. The

technical foundation for these methods,

and interpretations of the measured

results are emphasized, as well as strengths and limitations. The entire

course is presented in nine chapters

with the introductory part given as Chapter 1. The particular measurement

topics to be covered are: i) open sites

(Chapters 2 and 6), ii) transverse electromagnetic cells (Chapter 3) , iii)

techniques for measuring the electromagnetic shielding of materials (Chapter

4) , iv) anechoic chambers (Chapter 5) , and v) reverberating chambers (Chapter

8). In addition, since a small probe

antenna plays an Important role in some

of the EMC/EMI measurements covered

herein, a separate chapter on various

probe systems developed at NBS is given

in Chapter 7. Selected contemporary EMI

topics such as the characterization and

measurement of a complex EM environment,

interferences in the form of out-of-band

receptions to an antenna, and some

conducted EMI problems are also briefly

discussed (Chapter 9).

[Contact: Mark T. Ma, (303) 497-3800]

Randa, J.P. , and Kanda, M., A Lattice

Approach to Complex Electromagnetic

Environments

We outline an approach to the

characterization of complicated

electromagnetic environments based on a lattice (finite-difference)

approximation to Maxwell's equations.

Approximate solutions to the equations

are found numerically, subject to

constraints imposed by boundary

conditions and by measurements of the

field at some number of points. The

technique is illustrated by simple twoand three-dimensional examples.

[Contact: James P. Randa, (303)

497-3150]

Wilson, P.F., and Ma, M.T., Methods

for Measuring the Near-Fleld and FarField Shielding Effectiveness of Materials •
Page 26 CEEE Technical Progress Bulletin - May 1987

Radiated EMI , cont'd.

Techniques for measuring the shielding

effectiveness of materials are investigated. Specific approaches considered

are coaxial transmission line holders

and the use of a time-domain signal for

simulating plane wave shielding performance, and the dual transverse electromagnetic (TEM) cell and an apertured

TEM cell in a reverberation chamber for

the simulation of near-field shielding

capability. The advantages and limitations or each technique are summarized.

[Contact: Perry F. Wilson, (303)

497-3842]

Wilson, P.F., and Ma, M.T., Shielding

Effectiveness Measurements Using an

Apertured TEM Cell in a Reverberation

Chamber.

Near-field shielding effectiveness measurements are performed in a reverberation chamber using an apertured transverse electromagnetic cell as the re- ceiver. This configuration allows one

to investigate the electric and magnetic

field shielding properties of a material

simultaneously. Coupling to the cell is

modeled using small aperture theory, and

predicted results agree well with measured data.

[Contact: Perry F. Wilson, (303)

497-3842]

Wilson, P.F., and Ma, M.T., A Study of

Techniques for Measuring the Electromagnetic Shielding Effectiveness of

Materials, to be published as NBS

Technical Note 1095.

Shielding effectiveness relates to a material's ability to reduce the

transmission of propagating fields in

order electromagnetically to isolate one

region from another. Because a complex

material's shielding capability is

difficult to predict, it often must be

measured. A number of measurement

approaches are studied including the use

of a shielded room, coaxial transmission

line holders, time-domain signals, the

dual transverse electromagnetic (TEM)

cell, and an apertured TEM cell in a reverberation chamber. In each case, we consider the system's frequency range,

test sample requirements, test field

types, dynamic range, time required,

analytical background, and present data

taken on a common set of materials.

[Contact: Perry F. Wilson, (303)

497-3842]

Recently Published

FitzGerrell, R.G., Linear GainStandard Antennas Below 1000 MHz, NBS

Technical Note 1098 (May 1986).

Gain and antenna parameters related to

input impedance are calculated using a computer program named HVD6. This program uses well-documented equations to

compute these parameters for gainstandard antennas used in relative-gain

or gain-transfer measurements at frequencies below 1000 MHz. The utility of

this program is that it calculates gain

patterns and input impedances for linear

dipoles above perfect or imperfectly

conducting plane ground and in free

space, and for monopoles on perfectly

conducting plane ground. Examples are

included to illustrate the use of the

program. Uncertainties in the calculated parameters are estimated to be

less than those of the measured parameters.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

FitzGerrell, R.G., Site Attenuation,

IEEE Transactions on Electromagnetic

Compatibility, Vol. EMC-28, No. 1, pp.

38-40 (February 1986). [Note: NBS

Technical Note 1089 (November 1985)

presents similar material and includes

a derivation of the expression for site

attenuation, an appendix describing the

dipole antennas and an analysis of

their mismatch loss and input impedance, and an appendix incorporating

listings of the two FORTRAN 4 codes

used.

]

Site attenuation is a measure of performance of an open test site at fre-
CEEE Technical Progress Bulletin - May 1987 Page 27

Radiated EMI y cont'd.

quencies below about 1 GHz. These sites

typically consist of a large obstruction-free ground plane and the hemispheric volume above it. Calculations

of site attenuation are presented which

provide a reference for measurements

made on a 30- by 60-m wire-mesh ground

screen. Measured data are compared to

the calculated results.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Friday, D.S., and Adams, J.W., A

Statistical Characterization of

Electroej^losive Devices Relevant to

Electrcxaagnetic Compatibility Assessment, NBS Technical Note 1094 (May

1 986) .

Electroejqjlosive devices (EEDs) are

electrically fired esqjlosive initiators

used in a wide variety of applications.

The nature of most of these applications

requires that the devices function with

near certainty when required and remain

inactive otherwise. Recent concern with

pulsed electromagnetic interference and

nuclear electromagnetic pulse made apparent the lack of methodology for as- sessing EED vulnerability. A new and

vigorous approach for characterizing EED

firing levels is developed in the context of statistical linear models and is

demonstrated in this paper. We combine

statistical theory and methodology with

thermodynamic modeling to determine the

probability that an EED, of a particular

type, fires when excited by a pulse of a given width and amplitude. The results

can be applied to any type of EED for

which the hot-wire explosive binder does

not melt below the firing temperature.

Included are methods for assessing model

validity and for obtaining probability

plots, called "Firing Likelihood Plots".

A method of measuring the thermal time

constant of an EED is given. This

parameter is necessary to evaluate the

effect of a train of pulses. These

statistical methods are both more general and more efficient than previous

methods for EED assessment. The results

provide information which is crucial for

evaluating the effects of currents

induced by impulsive electromagnetic

fields of short duration relative to the

thermal time constant of the EEDs.

[Contact: Dennis S. Friday, (303)

497-5395]

Hill, D.A., A Numerical Method for

Near-Field Array Synthesis, IEEE

Transactions on Electromagnetic

Compatibility, Vol. EMC- 27, No. 4, pp.

201-211 (November 1985).

A numerical method for near-field array

synthesis is developed for arbitrary

array geometries. The intended

application is for generating a planar

field in a test volume for

electromagnetic susceptibility testing,

but the method is valid for arbitrary

field distributions. A uniqueness

theorem is utilized to allow the field

conditions to be enforced on the surface

of the test volume rather than

throughout the volume. The synthesis

method is a least-squares solution with

a constraint on the source norm; the

constraint keeps the field small outside

the test volume. Numerical results are

shown for the case of synthesizing a plane wave in the near field of an array

of line sources.

[Contact: David A. Hill, (303)

497-3472]

Jesch, R.L., Susceptibility of

Emergency Vehicle Sirens to External

Radiated Electromagnetic Fields,

National Institute of Justice

Report-200-85 (May 1986).

This report provides the results of an

exploratory study to determine the

susceptibility of electronic sirens to

interference from typical communications

equipment such as the transmitters and

antennas likely to be operated in and

around a law-enforcement vehicle.

Tests were performed using five specimen

sirens and communications equipment

operating at frequencies representing

the frequency bands of 25 to 50, 150 to
Page 28 CEEE Technical Progress Bulletin - May 1987

Radiated EMI , cont'd.

1 74, 400 to 512, and 806 to 866 MHz.

The sirens were mounted on top of a vehicle equipped with transmitters and

roof-mounted antennas and subjected to

levels of field strength generated by

mobile transmitting equipment having

output power levels up to 100 W. In

addition, the siren controllers were

subjected to various levels of field

strength inside either a transverse

electromagnetic (TEM) cell or an

anechoic chamber to determine their

susceptibility to known electromagnetic

f ields

[Contact: Ramon L. Jesch, (303)

497-3496]

Conducted Electromagnetic Interference

Released for Publication

Martzloff , F.D. , Surge Suppressors and

Clamps, to be published in the Proceedings of EXPO 86, Washington, DC,

June 16-19, 1986.

The paper presents a review of technologies developed for surge suppressor

devices used in electronic circuits.

Three generic types are described:

crowbars, varistors, and avalanche diodes. The significant differences in

their performance characteristics are

pointed out, together with guidance on proper application and measurements.

[Contact: Francois D. Martzloff, (301)

975-2409]

Martzloff, F.D. , and Wilson, P.F.,

Fast Transient Tests - Trivial or

Terminal Pursuit.

Measurements, augmented by theoretical

simulation techniques, have been performed to determine the attenuation of

fast-transients propagating in typical

power lines. The rise time of the applied pulses ranged from 0.7 to 50 ns. Theory and measurements agree and confirm that pulse attenuation increases

significantly for shorter pulses.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of P\iblications

Gibson, K. A., Page, J. M., and Miller,

C.K.S., A Bibliography of the NBS

Electrasagnetic Fields Division Publications, NBSIR 85-3040 (February

1986) . This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E. , Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J. C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS
CEEE Technical Progress Bulletin - May 1987 Page 29

Lists of Publications / cont'd.

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987),

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact; E. Jane Walters, (301)

975-2050]

1987 CEEE CALENDAR

May 12-14 (Colorado Springs, CO)

Laser Measurements Short Course* This

Short Course will be offered by the NBS

Electromagnetic Technology Division in

cooperation with the University of

Colorado and representatives of industry; its content emphasizes the concepts, techniques, and apparatus used in

measuring laser parameters. Ihe faculty

are laser experts from NBS, academia,

and industry; sessions will be held at

the Clarion Hotel in Colorado Springs.

An optional visit to the NBS laser measurement laboratories is part of the

program. The course is intended for

those holding a degree in physics or electrical engineering; the organizers

consider some experience in the use of

lasers desirable.

Topics to be addressed include: optics

for laser measurements, attenuation

techniques, laser operation, basic laser

power/energy standards, transfer standards, pulse measurements, beam-profile

measurements, diode lasers, laser measurements for optical communications,

statistics and error analysis, and laser

safety. [Contact; Office of Conference

Services, University of Colorado, (303)

492-5151/8630]

June 8-1 1 (Boulder, CO)

1987 EMI Metrology Short Course. The

NBS Electromagnetic Fields Division will

present this Short Course at the University of Colorado, Boulder, and the NBS

Boulder Laboratories to provide attendees with up-to-date information on instruments and techniques for measuring

electromagnetic interference (EMI). The

Course will combine lectures at the

University campus by NBS staff with

laboratory demonstrations and hands-on

participation at NBS. A special feature

will be a presentation by a military

representative on various EMI-related

military standards.

The planned schedule provides for the

following topics; <first day> military

standards and practices, measurements in

shielded rooms, open-site measurements

(as related to FCC requirements);

<second day> TEM cells (fundamentals,

susceptibility testing, emission testing) , EM probe development, generation

of standard fields in the anechoic chamber; <third day> shielding effectiveness

of materials (introduction, theory,

practice), reverberating chamber

(theory, practice), conducted EMI problems (CEMI sources and measurements,

generating constant fields for electromagnetic compatibility testing); <fourth

day> electrostatic discharge, measurement problems associated with complex

electromagnetic environments, timedomain measurement techniques. [Contact; Steve Horowitz, Office of Conference Services, University of Colorado,

(303) 492-5151]

September 14-16 (Research Triangle Park,

NC)

VLSI and GaAs Packaging Workshop.

This Workshop is , co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include; VLSI

and wafer scale package design (characterization and implementation, cost and

performance driven solutions); package

thermal design (characteristics, re- sults, and issues); package interconnection options (wire bonding, TAB, flip
Page 30 CEEE Technical Progress Bulletin - May 1987

1987 CEEE Calendar ^ cont'd,

nection options (wire bonding, TAB, flip

chip, or optical); GaAs IC packaging

(high speed packaging considerations);

package electrical issues (reduction of

parasitics and improvements in electrical performances); integrating package

design (from die to system, including

assembly and test issues) ; VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 22-25 (Boulder, CO)

Noise Measnremeiit Seminar* This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solving precision noise measurement problems. Course topics include reference

thermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment. A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group.

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar.

[Contact: Sunchana Perera (303) 497-

3546]

September 23-25 (Gaithersburg, MD)

Workshop on the Role of Optics in Power

System Electrical Measurements • Hi is

Workshop is sponsored by NBS, the

Bonneville Power Administration (BPA),

the Electric Power Research Institute

(EPRI), and the Empire State Electric

Energy Research Corporation (ESEERC) and

is intended for research and development

engineers in utilities and in companies

that supply equipment to the utility

industry. The objective of this workshop is to identify anticipated opportunities for improved measurement techniques that should arise as power systems individually and collectively

evolve to meet the needs of the 1990s.

Presentations will stress the design and

testing of optical systems for 60-Hz

voltage or current measurement; the

interfacing of electronic or optical

components with existing metering and

control systems; opportunities for new

measurement hardware resulting from

increased automated control of power

systems and of the testing of power

system components; and optical techniques for the measurement of electric

and magnetic fields in power systems or system components. The results of an NBS study evaluating optical techniques

for power-system electrical measurements

and carried out in agreement with BPA,

EPRI, and ESEERC will be presented as an

invited keynote. [Contact: Robert E.

Hebner, (301) 975-2403]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop*

This Workshop, sponsored jointly by IEEE

and. NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.
CEEE Technical Progress Bulletin - May 1987 Page 31

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are ej^ected to be prepared to

contribute to the developnent of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

CEEE SPCKISOSS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Defense Nuclear Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

U.S. Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division; Space &

Missile Organization; Research

Projects Office; Wright-Patterson Air

Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Belvoir; Fort Monmouth; Harry

Diamond Laboratories; Materials &

Mechanics Research; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Energy Center/Seal

Beach; Naval Air Test Center; Naval

Ocean Systems Center; Naval Research

Laboratory; Naval Sea Systems

Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Commerce

NOOA

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Department of Treasury

Bureau of Engraving & Printing

Ihe Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

As sociation

International Telecommunications

Satellite Organization

Environmental Protection Agency

Office of Radiation Programs

National Aeronautics and Space

Administration

Lyndon B. Johnson Space Center

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory

Other — Associated Univ. , Inc.
t

I
MBS. 1 14A (REV. 2-SO) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 87-3556

2. Performing Organ. Report No. 3. Publication Date

APRIL 1987

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin Covering

Ceinter Programs, April to June 1986 with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (if joint or other than NBS, see instructions)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

April-June 1986

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City, State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been approved for publication

previously.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the fifteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the second quarter of calendar year 1986. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12.

KEY WORDS (S/x to twejve entries;,alphabetical order; capitalize only proper neme^ and separate key words Jyy semicolons)

antennas; electrical engineering; eldctrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY

1 Unlimited

I I For Official Distribution. Do Not Release to NTIS

I I Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

35

15. Price

$11.95

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KEY CONTACTS; Center Headquarters (720) Director, Mr. Judson C. French (301) 975*2220

Deputy Director, Mr. Robert I. Scace (301) 975*2220

Eiectrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975*2400

Eiectromagnetic Fieids Division (723) Chief, Mr. Charies K.S. Miiier (303) 497*3131

Eiectromagnetic Technoiogy Division (724) Chief, Dr. Robert A. Kamper (303) 497*3535

Semiconductor Eiectronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975*2054

INFORMATiON:

For additionai information on the Center for Eiectronics and Eiectricai Engineering, write orcaii:

Center for Eiectronics and Eiectricai Engineering

Nationai Bureau of Standards

Metroiogy Buiiding, Room B*358

Gaithersburg, MD 20899

Teiephone (301) 975*2220