Reference

k

NBS

PUBLICATIONS

NBSIR 84-2877-2

A1110L. 034007

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

April - June 1984 with

1 984 CEEE Events Calendar

July 1984

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

K)C -—

100

,U56

34-2377-2

1384
INTRODUCTION TO JULY 1984 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the seventh issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the second quarter of calendar

year 1984.

Organization of Bulletin : This issue contains abstracts for all Center papers

released for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each

subheading within each topic. Unpublished papers appear under the subheading

"Released for Publication". Papers published in the quarter appear under the

subheading "Recently Published". Following each abstract is the telephone number of

the individual to contact for more information on the topic; unless otherwise noted,

this person is the first author. This issue also includes a calendar of Center

conferences and workshops for the remainder of calendar year 1984, an announcement of

newly released standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 21.

Note on Publication Lists : Guides to earlier as well as recent work are the

publ i cati on lists covering the work of each division. These lists are revised and

reissued on an approximately annual basis and are available from the originating

division [publications from the Semiconductor Technology Program are covered in a single list, available from either Semiconductor Division].
/e * CEEE Technical Progress Bulletin - July 84

TABLE OF CONTENTS

INTRODUCTION

NATIONAL BUREAU OF STANDARDS

LIBRARY

Page 1 JC

/oo

/q$u

inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Analysis Techniques 3

Insulators and Interfaces 3

Dimensional Metrology 4

Integrated Circuit Test Structures 4

Process & Device Modeling 5 Radiation Effects

Packaging 7 Other Semiconductor Metrology 8

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 9

Waveform Metrology 9

Cryoelectronic Metrology 9

Antenna Metrology 9

Noise Metrology 10

Microwave and Millimeter-Wave Metrology 10

Laser Metrology 11

Optical Fiber Metrology 11

Other Fast Signal Topics 11

ELECTRICAL SYSTEMS 12

Power Systems Metrology 12

Pulse Power Metrology 15

Magnetic Materials and Measurements 15

Superconductors 16

Other Electrical Systems Topics 16

ELECTROMAGNETIC INTERFERENCE 1 /

CEEE CALENDAR 19

NEW STANDARD REFERENCE MATERIALS

SPONSOR LIST

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back covf*r
Page 2 CEEE Technical Progress Bulletin - July 84

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Released for Publication

Baghdadi, A., Measurement of the

Oxygen and Carbon Content of Silicon

Wafers by Fourier Transform

Spect rophotomet ry

Fourier transform infrared (FT-IR) spectrophotometry is a rapid, nondestructive

characteri zation technique which is

being increasingly applied on a large

scale to the routine measurement of the

oxygen and carbon content of silicon

wafers used for the fabrication of microelectronic devices. Control of the

oxygen content is needed to achieve

acceptable yields in modern device processing, particularly for those pro- cesses which utilize oxide precipitates

to protect active regions of devices

from contamination by metallic impurities during high-temperature processing.

The i nterl aboratory reproducibil ity of

the measurement is not adequate considering the degree of control of the oxygen that is required. This review fo- cuses primarily on the measurement of

oxygen and carbon in silicon and on methods for improving quantitative FT-IR

absorption measurements on semiconductor

wafers.

[(301) 921-3625]

Recently Published

Lowney, J.R. and Geist, J.C., Comparison of Models of the Built-In Electric Field in Silicon at High Donor

Densities, J. Applied Physics, 55

(10), pp. 3624-3627 (15 May 1984).

The built-in-electric field for holes

due to donor-density gradients in n-type

silicon is calculated at 300 K for donor

densities between 1 x 10 18 and 1 x 10 2 ° cm-3

. The calculation is based upon a recent model of band-gap narrowing that

includes the effects of ionized

impurities, many-body interactions, and

an estimate of spatial fluctuations of

the band-gap edge caused by the random

distribution of donor atoms in the silicon crystal. This model of band-gap

narrowing differs significantly from a number of other band-gap narrowing

models currently in use in that it

agrees with the band-gap narrowing mea- sured optically at 35 and 300 K rather

than that inferred from electrical mea- surements. The built-in-electric field

based on this model, which also differs

significantly from the results of most

previous models, decreases significantly

above a donor density of 1 x 1019 cm

-3

with a reversal of the field above

7 x 10 19 cm" 3

. The implications of this

work for photodiodes are discussed.

[(301) 921-3786]

Thurber, W.R., Lowney, J.R., and

Phillips, W.E., Measurement Techniques for High Power Semiconductor

Materials and Devices: Annual Report,

January 1, 1982 to March 31 , 1983,

NBSIR 84-2838 (April 1984).

This annual report is the final one in a series which describes NBS research to

develop procedures for the effective

utilization of deep-level measurements

to detect and characterize defects which

reduce lifetime or contribute to leakage

current in power-device-grade silicon.

During this reporting period, the previously written computer program for

predicting excess-carrier lifetime was revised to calculate more accurately

lifetimes for high or low injection

conditions and in space-charge regions.

Comparisons were made between lifetime

measurements on platinum-doped silicon

diodes and the predictions of the com- puter model. As part of the effort to

extend the procedures to analyze data

from nonexponential transient capacitance measurements, the time dependence

of the capacitance-voltage relationship

of a heavily platinum-doped silicon

diode was measured as a function of bias

voltage. Included as appendices are three recent publications resulting from

the work. A listing of the lifetimepredicting computer program is also an appendix. [(301) 921-3625]
CEEE Technical Progress Bulletin - July 84 Page 3

Analysis Techniques

Released for Publication

Seabaugh, A.C., Bell, M.I., Larrabee,

R.D., and Oliver, J.D., HighFrequency Transient-Resistance

Spectroscopy of Deep Levels in SemiInsulated GaAs.

A new photoinduced transient-resistance

technique is used to characterize deep

levels in semi -i nsul ati ng GaAs. In this

technique, termed photoresistance deeplevel transient spectroscopy (PR-DLTS),

an optical pulse is used to generate

excess carriers which are trapped by

deep levels in the material. The ac resistance of the specimen is monitored,

and the resistance transient which

occurs after the illumination ends is

signal processed in the same way as the

capacitance transient in conventional

DLTS. Comparison of this technique with

the dc current-transient measurement,

photoinduced transient spectroscopy

(PITS), shows that it is sensitive to

the same trapping/detrapping phenomena.

PR-DLTS data for the Cr-related deep

level is consistent with published DLTS

results. Results are reported for

materials grown by the horizontal

Bridgman method and by the liquidencapsulated Czochralski technique, both

with and without chromium doping.

Nineteen specimens from ten different

manufacturers are compared.

[(301) 921-3625]

Recently Published

Chang, T-T., The Calibration Methods

and the Reference Materials in ESR

Spectroscopy, Magnetic Resonance

Review, 9 (1-3), pp. 65-124 (May

1984).

This paper reviews the calibration methods and reference materials that have

been recommended or have been in use in

ESR [electron spin resonance] spectroscopy. Methods for the measurement of

microwave frequencies and magnetic

fields are briefly mentioned. Methods

to measure the Q-factor of a microwave

cavity are described. The calculation

and measurement of the microwave magnetic field in an ESR resonance cavity

are described in detail. Methods for

the determination of the concentration

of the paramagnetic centers in a sample

are described after a discussion of the

theoretical background. Precautions and

factors that affect the accuracy of this

determination are discussed. Reference

materials, in 16 groups, are listed.

Recipes for preparation of some of these

standard samples are also given.

[Contact: Larrabee, (301) 921-3786]

Insulators and Interfaces

Released for Publication

Candela, G.A. and Chandl er-Horowi tz , D.

An Ellipsometry System for High Accuracy Metrology of Thin Films, to be

published in Proc. SPIE - The International Society for Optical

Engineering [paper given at conference,

May 1-4, 1984, Arlington, VA].

A computer-cont rol 1 ed spectroscopic

ellipsometer of high accuracy has been

designed and constructed. A theta-twotheta goniometer unit and optical rail

system allows various el 1

i psometri

methods to be used to measure the parameters A and 4'. Three important methods

under study for accuracy, precision, and

speed of measurement are the conventional null method, the rotating ana- lyzer method, and the principal angle

method. All the goniometer angles,

including the angle of incidence, can be

measured to an accuracy of 0.001 deg.

The present light sources are two lasers

with fixed wavelengths, 632.8 nm and

441.6 nm, in addition to a monochromator

that can be used to scan the wavelength

range from 190 to 2600 nm. A unique

sample alignment system which utilizes

two quadrant detectors has been

developed and a simple but very

effective nulling scheme is used. This

instrument is primarily used for the

metrology of semiconductor materials and

for the calibration of reference
Page 4

Insulators and Interfaces , cont'd.

standards for thin film thickness and

refractive index. [(301) 921-3625]

Dimensional Metrology

Recently Published

Nyyssonen, D. , National Bureau of

Standards , A Review of NBS's Activities

in the Area of Linewidth Measurement,

Proc. Scientific Apparatus Makers Association Conf., The Future of Optical

Technologies in the Semiconductor

Industry, pp„ 1-7 (March 1984)

[Conference, Sunnyvale, CA May 23,

1983].

This manuscript is a summary of a talk

covering current NBS activities in linewidth measurement including research,

calibration of standard reference materials (SRMs), development of calibration

procedures and test methods, and technology transfer. The current status of

photomask linewidth SRMs is discussed

(anti-reflective "gold" chromium SRMs

474 and 475, bright chromium SRM 476,

and the 3X reticle SRM 1830). Wafer

linewidth measurements are divided into

two categories, thin layers (less than

approximately 200 nm) and thick layers.

The design of the linewidth standard for

thin layers is described. Research

problems remaining for thick layers are described along with current NBS waveguide modeling. Instrumentation used

for both photomask and wafer calibrations is also described. NBS plans for

development of SEM/e-beam instrumentation and SRMs are also included.

[(301) 921-3786]

Integrated Circuit Test Structures

Released for Publication

Carver, G.P. and Wachnik, R.A.,

TERRY-2: A Test Chip for Characterization of the Performance of Buried-Channel Charge-Coupled Device (CCD)

Imagers, to be published as NBSIR 84-

2894.

CEEE Technical Progress Bulletin - July 84

Test chip TERRY-2 is intended to be used

for characterization of the performance

of buried-channel charge-coupled device

(CCD) imagers fabricated with a doublepolysilicon-gate process which includes

several implants. Test structures in

TERRY-2 address two areas judged to be

key ones for CCD performance: device

parameters and process parameters, including material properties. TERRY-2 is

a modular chip designed for automatic

testing; selected devices can be wire

bonded for testing various environmental

effects; a region containing test structures can be thinned in the same manner

as a back-side-illuminated CCD would be;

and large devices can be beveled for

spreading resistance or physical analysis. This report describes the features

of TERRY-2, the test structure designs,

and the measurement procedures. The

technique of charge pumping for measuring interface state density is discussed

in an appendix.

[(301) 921-3786]

Yen, D. , Glendinning, W.B., and Linholm,

L.W., An Electrical Test Structure

for Proximity Effects Measurement and

Correction.

This paper describes the design of a proximity effect test structure and

electrical test method for estimating

the magnitude of proximity effects in

electron-beam lithography. The test

structure consists of a van der Pauw

cross resistor for measuring sheet re- sistance, a bridge resistor for measuring electrical linewidth, and a second

bridge resistor simulating a close linespace environment for measuring electrical linewidth where proximity exposure

effects from nearby patterns may be

encountered. In this experiment, test

structures were delineated in aluminum

on silicon wafers using electron-beam

exposure and wet chemical etching.

Electrical measurements from these test

structures are compared to optical mea- surements to verify the measurement

method. In addition, results from the

test structures are used to estimate the

Gaussian parameters for the Gaussian
CEEE Technical Progress Bulletin - July 84 Page 5

Integrated Circuit Test Struc . , cont ' d

model commonly used for proximity cor- rections.

[(301) 921-3621]

Recently Published

Roenker, K.P. and Linholm, L.W., An

NMOS Test Chip for a Course in Semiconductor Parameter Measurements, NBSIR

84-2822 (April 1984).

This report describes an NMOS test chip,

NBS-40, which was developed to be used

in graduate level electronics engineering courses involving semiconductor

parameter measurements associated with

the fabrication of integrated circuits.

The 35 test structures included in the

test chip and their use in materials,

device, and process parameter measurements are described. Details of the

silicon gate NMOS process used in the

chip fabrication are also provided.

[Contact: Linholm, (301) 921-3541]

Process and Device Modeling

Released for Publication

Albers, J., An Alternative Approach to

the Calculation of Four-Probe Resistances on Nonuniform Surfaces.

An alternative approach to the calculation of four-probe resistances of non- uniform resistivity structures is presented. The basis of this approach is

the form of the spreading resistance

correction factor integral as given by

Berkowitz and Lux. When this form is

used, the difference of the spreading

resistances involved in the four-probe

resistance may be written as a simple

integral which does not contain Bessel

functions. Also, the derivative of the

spreading resistance which is involved

in the probe-spacing experiment simulation yields a simple algebraic expression. The resulting equations for the

four-probe resistance and the derivative

function are formally shown to be independent of both the probe radius and the

probe-current density and involve only

the kernel of the spreading resistance

correction factor integral (sometimes

known as the integrating factor). For

the case of a uniform layer over insulating, conducting, or no boundaries (a

semi -i nf i ni te slab), analytic expressions are derived for the four-probe

resistance and the derivative function

and are investigated as a function of

the probe spacing. For nonuniform

resistivity structures, a relatively

simple numerical procedure is used for

the evaluation of the four-probe

resistance integral. The results

obtained from this numerical technique

for the four-probe resistance and the

algebraic expression for the derivative

function are compared with those

obtained from more extensive numerical

techniques and are shown to be in

excellent agreement. The evaluation of

the four-probe resistance and the

derivative function by means of the

variational technique described by Choo

and coworkers is presented. A caveat

concerning the use of the Gauss-Laguerre

technique for calculating the four-probe

resistance is also discussed.

[(301) 921-3621]

Berkowitz, H.L. and Albers, J. , Simplified Method for Calculating FourProbe Resistances on Nonuniform Structures.

A simple method for calculating the

four-probe resistance as an integral

involving only the kernel of the correction factor integral (and independent of

the probe radius and the probe-current

density) is presented. Analytic expressions are derived for uniform layers and

are investigated as a function of the

probe spacing. For nonuniform resistivity structures, a simple numerical procedure is presented for the evaluation

of the four-probe resistance and is

compared with more extensive techniques.

[Contact: Albers, (301) 921-3621]

Wilson, C.L. , Roitman, P. , Marchiando,

J.F., and Blue, J.L., Modeling of the
Page 6

Process & Device Modeling , cont'd.

Process Sensitivity of Submicron Silicon MOSFETs.

When short-channel MOSFET transistor

models are compared to experimental

data, the uncertainty in the process

models used as inputs often requires

that some of the process model parameters be adjusted to fit the data. In this work the process sensitivity of the

source-drain junction is modeled. We

find that sensitivity of the saturated

drain current to the source-drain junction depth increases sharply at some critical value of the junction depth.

This value of junction depth is reached

when the junction depth is equal to the

zero biased depletion region width. As

the contribution of the source drain

junction to the sum of the depletion

width and the junction depth becomes

significant, the total change in channel

field caused by the source-drain junction is a maximum.

[(301) 921-3541]

Recently Published

Albers, J., Semiconductor Measurement

Technology: TXYZ: A Program for Semiconductor IC Thermal Analysis, NBS

Special Publication 400-76 (April

1984).

A computer program, TXYZ, for the

thermal analysis of semiconductor

integrated circuits is presented and its

applications are discussed. The program

makes use of the closed form, analytic

solution of the steady-state heat flow

problem for a rectangular three-layer

structure with multiple heat sources on the top layer. The temperature may be

obtained for any point or set of points

in the structure and is useful in the

determination of the steady-state

thermal response of IC chips and

packages.

[(301) 921-3621]

Bennett, H.S. and Wilson, C.L. , Analysis of the Statistical Comparisons of

CEEE Technical Progress Bulletin - July 84

Data on Band-gap Narrowing in Heavily

Doped Silicon: Electrical and Optical

Measurements, J. Applied Physics,

55, 3582-3587 (May 15, 1984).

A system of subroutines for iteratively

reweighted least squares (IRLS) computations has been applied to the published

measured and theoretical data on band-gap narrowing in heavily doped

silicon. The data include electrical

and optical measurements at room

temperature, photoluminescence and

optical measurements for temperatures

below 35 K, and theoretical calculations

at 300 K and 0 K. This procedure, IRLS,

allows an unambiguous comparison of the

various experimental and theoretical

data in band-gap narrowing to be made.

The results are (1) that the optical

absorption data and theory are consistent at both 300 K and at temperatures

below 35 K; (2) that the electrical and

optical measurements are not consistent;

and (3) that when compared with the low

temperature optical absorption data, the

photoluminescence data have low statistical significance. [(301) 921-3541]

Blue, J.L. and Wilson, C.L., Numerical

Methods for Solving Coupled Semiconductor Equations on a Minicomputer,

Proc. Elliptic Problem Solvers II,

Academic Press, pp. 521-530 (April

1984).

A general mathematical model for analyzing currents and fields in semiconductor

devices requires three coupled nonlinear

elliptic partial differential equations

in two dimensions. A general-purpose

solver for systems of coupled nonlinear

elliptic partial differential equations

is used. The numerical framework is

linear elements on triangles, with

nonuniform triangulations. The non- linear finite element equations are solved by approximate Newton methods;

the linearized equations are solved by

sparse Gaussian elimination and by

multi-level iteration. For accurate

solutions, triangle refinements are generated adaptively.

[Contact: Wilson, (301) 921-3541]
CEEE Technical Progress Bulletin - July 84 Page 7

Process & Device Modeling , cont'd.

Roitman, P. , Albers, J., and Myers,

D.R., An Investigation of the TwoDimensional Shape of Ion-Implanted

Regions, J. Applied Physics, 55

(12), pp. 4436-4443 (June 15, 1984).

The two-dimensional shape of arsenic

ion-implanted regions in single-crystal

silicon was investigated both experimentally and theoretically. Experimentally, two techniques were shown to have

the necessary submicron resolution: a junction etch process and an SEM-induced

current collection method. A comparison

of junction depths determined by the

etch technique and the EBIC techniques

with the depths calculated using several

amorphous target codes was made. For

the case of low temperature (600°C)

anneals, the etch technique agrees very

well with the junction depths predicted

by the amorphous target code due to

Winterbon. The lateral junction locations obtained from the etch technique

are in good agreement with the predictions of a two-dimensional Monte Carlo

code (TRIM) which indicates that the

arsenic does not show any significant

lateral scattering under mask edges.

For the high temperature (1000°C) an- neals, the etch and EBIC techniques

agree with each other. Comparison with

arsenic-diffusion models shows that

concentration-dependent effects are

important.

[(301) 921-3621]

Radiation Effects

Released for Publication

Galloway, K. F., Gaitan, M. , and

Russell, T.J., A Simple Model for

Separating Interface and Oxide Charge

Effects in MOS Device

Characteristics.

A simple model to describe radiation

effects on MOSFET electrical characteristics is presented. The key assumption

is that mobility degradation in an en- hancement mode MOSFET is predominantly

due to charged interface traps. Model

predictions are compared with measured

values of interface trap density and

device I-V curves.

[(301) 921-3541]

Packaging

Released for Publication

Moore, B.A. and Ruthberg, S., editors,

RADC/NBS Workshop, Moisture Measurement

and Control for Semiconductor Devices,

III, to be published as NBSIR 84-

2852.

The workshop, one of a series concerned

with measurement problems in integrated

circuit processing and assembly, served

as a forum to examine the continuing

progress that has been made in the

measurement and control of moisture in

hermetically packaged semiconductor

devices. Thirty-four presentations are included which contain detailed information for securing hermetic packages with

low moisture content. Agreement in

measurement has been obtained with the mass spectrometer for cerdip and metal

packages at the 5000 ppmv level of

moisture through the use of suitable

moisture generators, a 3-volume

calibrator, calibrated dewpoint

hygrometers, and appropriate operational

procedures. An approach is given for a reproducible and reliable transfer

package. However, the increased use of

organic materials in new and rapidly

expanding technologies such as VLSI/ VHS I C and hybrid packaging presents

new and more complex challenges to

accurate measurement of interior

moisture.

[Contact: Ruthberg, (301) 921-3625]

Recently Published

Harman, G.G., The Microelectronic

Bail-Bond Shear Test - A Critical

Review and Comprehensive Guide to Its

Use, Solid State Technology, 27 (5),

pp. 186-197 (May 1984).

The microelectronic bail-bond shear test
Page 8 CEEE Technical Progress Bulletin - July 84

Packaging , cont'd.

was first developed in 1967. Since

then, it has been used to study the

effects of contamination on bondability,

to characterize the reliability of goldaluminum intermetal lie formation, to

control bonding machine parameters for

device production, and to troubleshoot

such production problems as poor metallization adherence and contamination.

This paper critically reviews all of

these uses and identifies ways that the

shear test can be implemented to improve

bond yield and assure long term bond

reliability. A manual shear probe is

described that can be quickly made from

the blade of a jeweler's screwdriver.

This probe was instrumented with a strain gage and the shear test results

compared within 10% of those obtained

from a machine. The paper also presents

data obtained from shearing both

aluminum-ball and -wedge bonds and

determines how the shear testing machine

requirements for these differ from those

required to test gold ball bonds.

The shear strengths of both annealed

gold and aluminum were measured and

compiled in a plot of shear force versus diameter of the bonded area in order to

determine the maximum force obtainable

when shearing both gold and aluminum

bonds having differing ball size.

Interferences that may produce erroneous

shear test results, such as friction

rewelding of gold balls on gold metallization, are described along with ways

of avoiding such problems. Finally, the

implications of pending ASTM and

military standards on the widespread use

of the shear test is discussed. This

paper is intended to present all information necessary to both understand and

implement the shear test for research

purposes or for production control.

[(301) 921-3621]

Other Semiconductor Metrology

Recently Published

Dodge, M.J., Refractive Properties of

Magnesium Fluoride, Applied Optics,

23 (12), 1980-1985 (June 15, 1984).

The refractive indexes of a commercially

available specimen of single-crystal

MgF2 were determined for both the

ordinary and ext raordinary rays at

selected wavelengths from 0.2026 to

7.04 urn. Measurements were made by means of the minimum-deviation method on

a precision spectrometer near 19°C. The

experimentally determined index values

for each polarization were fitted to a three-term Sel lmeier-type dispersion

equation of the form:

n

2 - 1 = l Aj2

/ (

2 _ Xj 2 ),

relating the refractive index n to the

wavelength of interest X, the wavelength

Aj. The birefringence was computed as a function of wavelength from the calculated index values obtained for the two

polarizations. The dispersion coefficients were also determined for the 0-

ray and for the birefringence. The

results of this study are compared with

previously reported work on the refractive properties of MgF2.

[(301) 921-3625],

Kowalski, P. , Lankford, W.F., and

Schafft, H.A., Nondestructive

Measurement of Solar Cell Sheet

Resistance Using a Laser Scanner,

IEEE Trans. Electron Devices, ED-31,

pp. 566-570 (May 1984).

Experimental data have shown that a laser scanner can be used as a probe to

make nondestructive measurements of

solar cell sheet resistance with an accuracy of several percent. The photovoltaic response from cells with con- trolled sheet resistance was measured

using the scanner and compared with the

theoretical predictions made by other

workers. Several limitations in this

technique are identified and a measurement methodology is suggested.

[Contact: Schafft, (301) 921-3621]
CEEE Technical Progress Bulletin - July 84 Page 9

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Lawton, R.A., An Efficient Antialiasing Filter, to be published in Proc.

Conference on Precision Electromagnetic

Measurements [paper to be given at

Conference, Delft, Netherlands, August

20-24, 1984].

The application of a solid state reference filter as an efficient antialiasing

filter is described. The analytical

basis for the efficiency of this filter

is described, and a specific example of

measuring a 1024-point waveform with an RC filter and the solid state filter is

given. [(303) 497-3339]

Cryoelectronic Metrology

Released for Publication

Kautz, R.L. and Monaco, R., Survey of

Chaos in the rf-Biased Josephson

Junction.

Chaotic behavior in the rf-biased

Josephson junction is studied through

digital simulations of the StewartMcCumber model. Chaotic states are characterized by Poincare sections,

Liapunov exponents, and power spectra.

Models are presented which explain some features of the chaotic spectra. The

parameter range over which chaotic

behavior occurs is determined empirically for a broad range of dc bias, rf

bias, and the hysteresis parameter for a fixed rf frequency. It is shown that

chaos does not occur if either the dc

bias or the rf bias is very large. An

attempt is made to explain the boundaries of the chaotic region in terms of

simple models for chaotic behavior.

[(303) 497-3391]

Antenna Metrology

Released for Publication

Stubenrauch, C.F. and Francis, M.H.,

Comparison of Measured and Calculated

Mutual Coupling in the Near Field between Microwave Antennas, to be published as NBSIR 84-3010.

Measurements of near-field mutual cou- pling were performed between two moderate sized microwave antennas and com- pared to coupling calculated using

recently developed computer programs.

Input data for the programs are the

complex far-field radiation patterns of

the antennas. Experimentally determined

and calculated coupling as a function of

both transverse displacement and separation agree closely except for a constant

offset observed in some cases. In addition, coupling values computed using a program which approximates the far-field

radiation patterns were compared to

experiment and found to be satisfactory. [(303) 497-3927]

Wyss, J.C. and Sheeran, S., A Passive,

Optical Modulator and Link for

Antennas.

This paper describes a technique for

coupling an antenna to a receiver using

a passive, fiber optical link. This

technique should avoid pickup and electromagnetic perturbations normally asso- ciated with the use of electrically con- ductive cables. Laser light (632.8 nm)

is modulated at the antenna by an electro-optic, lithium tantalate crystal

and is then transmitted with a fiber

optic cable to the receiver electronics.

Using an avalanche photodiode, the

amplitude-modulated optical signal is

converted to an electrical signal. The

crystal is mounted directly on an antenna without amplifiers or other active

electrical components. Using a broadband antenna with fields generated in an anechoic chamber and a standard TEM

cell, the frequency response was measured to drop 3 dB per 1.0 GHz from 100

MHz to at least 2.0 GHz, with a signalto-noise ratio of 5 dB with a 1.0-V/m

field and a 1.0-kHz bandwidth. A dynamic range of at least 60 dB is shown.

[Contact: Nahman, (303) 497-5167]
Pagt 10

Anttnna Matrology , cent 1 d

Rtctntly Publlshtd

Fltzgerrell, R.G., A Source of E and H

Fields for Antenna-Factor Calibration, IEEE Trans, Electromagnetic

Compatibility, EMC-26, No, 2, pp, 58-65

(May 1984).

The loop cell used for calibration is

fabricated using two intersecting metal

sheets joined at the intersection and

forming a 36° angle. A section of a loop is mounted between two coaxial

panel jacks, one on each sheet located

at a distance equal to the loop radius

from the intersection. A known current

through this section of electrically

small loop produces calculable E and H fields between the sheets in the plane

of the loop. These known fields may be

used to determine the antenna factor of

small E and H antennas placed in the

field if the mutual impedance due to the

antenna images in the sheets is negligible and the antenna is not close to the

open edges of the cell. Measured and

calculated antenna factors agree within

± 2 dB between 0.25 and 1000 MHz.

[(303) 497-3737]

Noise Metrology

Released for Publication

Miller, C.K.S. and Daywitt, W.C., The

NBS Switching Radiometers, to be

published as NBSIR 84-3004.

An error analysis for the Dicke radiometers used by the National Bureau of

Standards (NBS) in WR90 waveguide noise

calibration services for sources with

noise temperatures above 1000 kelvin is

discussed.

A list of measurement frequencies

currently available in the WR90 and WR62

bands is presented.

[(303) 497-3131]

Miller, C.K.S. and Daywitt, W.C., The

NBS WR62 and WR90 Reference Noise StanCEEE Tichnleal Prograss Bulletin - July 84

dards, to ba published as NBSIR 84-

3005.

Tht basis for the National Bureau of

Standards (NBS) WR90 and WR62 Waveguide

Reference Noise Standards and the corre- sponding error analyses are described.

The standards are heated (1270K) thermal

noise generators, and a derivation of

their output noise temperature equations

is also presented. Results of comparisons of the NBS WR90 standard with those

of Sweden, England, Australia, and Japan

are included.

The text is extracted from course notes

presented at NBS in 1970, and hence does

not include descriptions of standards

constructed at NBS since that time.

[(303) 497-3131]

Microwave and Millimeter-Wave Metrology

Released for Publication

Juroshek, J.R. and Hoer, C.A., A Technique for Extending the Dynamic Range

of the Dual Six-Port Network

Analyzer.

The dynamic range of the six-port type

of automatic network analyzer is typically limited to measuring two-port

devices with a transmission coefficient

S 12 in the range of 0 to -60 dB. This

paper describes a subcarrier approach

for extending the dynamic range of the

dual six-port network analyzer. The

subcarrier is generated by inserting a 10-kHz, biphase modulator ahead of one

of the six-ports. The 10-kHz signal is

detected with a coherent vector voltmeter. With the subcarrier approach,

measurements of S 12 in the range of -60

to -100 dB can be made.

Test results are presented showing mea- surements of S 12

= -80 dB with a precision of ±0.05 dB or better, and an accuracy of ±0.16 dB or better at 3GHz.

Measurement results are also presented

showing the dynamic range achievable

with thermistor and barretter detectors.

[(303) 497-5362 or -3196]
CEEE Technical Progress Bulletin - July 84 Page il

Microwave & Millimeter-Wave , cont'd.

Recently Published

Juroshek, J.R. and Hoer, C.A., A Dual

Six-Port Network Analyzer Using Diode

Detectors, IEEE Trans. Microwave

Theory and Techniques, MTT-32, No. 1,

pp. 78-82 (January 1984).

The performance of a dual six-port network analyzer using diode detectors is

described. The network analyzer operates over the 2-18 GHz band using com- mercially available, low-barrier,

Schottky diodes. The paper describes

the process for calibrating the diodes

for deviation from square-law. Measurement results are presented showing the

accuracy and precision of the six-port

network analyzer when measuring 1-port

and 2-port devices.

[(303) 497-5362 or -3196]

Laser Metrology

Released for Publication

Simpson, P.A., Johnson, E.G., Jr., and

Etzel, S.M., A Calorimeter for Measuring High-Energy Optical Pulses.

Two similar calorimeters for measuring

laser pulses in the range 1 kJ to 15 kJ are described. The calorimeters, which

are electrically calibrated, can be

operated anywhere from the ultraviolet

to the infrared by selecting the proper

materials for the volume absorber and

deflecting mirror. Operation of each

calorimeter is controlled by a dedicated

desk-top computer. The theoretical

basis for the calorimeters is given as are the constructional and operational

details. The computer programs that are used are included in the appendices.

[(303) 497-3789]

Optical Fiber Metrology

Released for Publication

Franzen, D.L., Determining the Effective Cut-off Wavelength of Single-Mode

Fiber: An Interlaboratory Comparison.

The National Bureau of Standards (NBS),

in cooperation with the Electronic

Industries Association, conducted an interlaboratory measurement comparison

among six fiber manufacturers to determine the effective cut-off wavelength of

single-mode fiber. Measurement techniques based on transmitted power were

used to determine cut-off wavelength on four fibers designed for single-mode

operation at 1300 nm. NBS also contributed results using a spectral near-field

technique.

The range of measurements covered by an interval of one standard deviation for

the various techniques extends from 6 to

12 nm. With the appropriate data

analysis, single bend attenuation and

power step methods give the same

results. Both techniques are easily

implemented as extensions to the usual

spectral attenuation measurement.

[(303) 497-3346]

Other Fast Signal Topics

Released for Publication

Hill, D.A., Radio Propagation in a Coal Seam and the Inverse Problem.

The longwall method of coal mining in

underground coal seams is very efficient

in uniform seams, but coal seam anom- alies can make the method unprofitable

and unsafe. This paper describes the

theoretical basis for detection of coal seam anomalies using medium frequency

(MF) radio transmission over paths on the order of 200 meters in length.

The key to the method is the sensitivity

of the attenuation rate of the coal sea:’ mode of propagation to changes in the

coal seam parameters, such as height or electrical conductivity. From a large

number of transmission paths, the principles of tomography can be used to

reconstruct an image of the seam. [(303) 497-3472]
Page 12 CEEE Technical Progress Bulletin - July 84

Other Fast Signal Metrology , cont'd.

Metrology for Electromagnetic Technology: A Bibliography of NBS Publications, Edited by Kamper, R.A. and

Kline, K.E., to be published as NBSIR 84-3014.

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1983.

A few earlier references that are directly related to the present work of

the Division are included.

[(303) 497-3535]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Ful comer, P.M., Calibration Check of

Bonneville Power Administration 60-Hz

Electric Field Exposure Monitor & Measurement of Its Surface Field Enhancement for Various Uniform & Nonuniform

Operating Configurations, to be published as NBSIR 84-2885.

This report presents the results of

tests requested by the Bonneville Power

Administration (BPA) on a 60-Hz Electric

Field Exposure Monitor (EFEM) developed

by their Instrumentation and Standards

Branch. The unit is designed to be worn

on the body, such as in a shirt pocket

or attached to the clothing. The calibration of two sample units is examined,

information on surface field enhancement

(which results from the EFEM sensors'

elevated position relative to the sur- face of the body) is presented, the

effect of material covering the sensor

is specified, and the applicability of

calibration and operational information

obtained in uniform fields to nonuniform

fields is investigated.

[(301) 921-3121]

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

January 1, 1984 to March 31, 1984, to

be published as NBSIR 84-2898.

This report documents the progress on three technical investigations sponsored

by the Department of Energy and performed by the Electrosystems Division,

the National Bureau of Standards. The

work described covers the period from

January 1, 1984 to March 31, 1984. The

report emphasizes the performance of ion

counters like those used to measure the

ions near dc transmission lines, the

production rates of oxy fluorides in

SFg corona discharges, and in the

measurement of space charge associated

with a pressboard interface in transformer oil.

[(301) 921-3121]

Hebner, R.E., Kelley, E.F., Forster,

E.O., and FitzPatrick, G.J., Observation of Prebreakdown and Breakdown

Phenomena in Liquid Hydrocarbons II Nonuniform Field Conditions, to be

published in the Conference Record of

the Eighth IEEE International Conference on Conduction and Breakdown in

Dielectric Liquids [paper to be given

at Conference, Pavia, Italy, July 24-

27, 1984].

The prebreakdown processes have been

recorded in n-hexane, toluene, and

Marcol 70, both in a pure state and with

selected impurities. The study was carried out using a point-plane geometry. A low ionization potential additive had only a small effect on the

breakdown voltage or the streamer propagation speed but did significantly alter

the shape of the prebreakdown streamer

when the needle was the anode. For a cathode needle, chemical impurities

affected the breakdown voltage.

[(301) 921-3121]

Laug, O.B., A Wideband Transconductance Amplifier for Current Calibrations.

A wideband transconductance amplifier

for current calibrations is described.
CEEE Technical Progress Bulletin - July 84 Page 13

Power Systems Metrology , cont'd.

The amplifier will deliver a groundreferenced constant current of 5 A

rms from dc to over 100 kHz. Its stable magnitude and phase permit it to be

used in precise power calibration

systems to provide the current component

of a phantom power source.

The amplifier also provides a groundreferenced voltage output of 1 volt per

ampere for monitoring the magnitude and

phase of the output current.

[(301) 921-2727]

Mcknight, R.H., The Measurement of Net

Space Charge Density Using Air Filtration Methods, to be published in IEEE

Trans. Power Apparatus and Systems

[paper to be given at Conference,

Seattle, WA, July 15-20, 1984].

The efficiency of a high efficiency

particulate air (HEPA) or absolute

filter for removing charge from an air

stream has been measured for a variety

of space charge and air flow conditions.

Ion densities ranged from 10 5 to

10 6 /cm 3 and were for positive and

negative space charge as well as mixtures. The space charge was made up

predominantly of ions with mobilities

greater than 0.1 x 10~4 m

2 /V»s. For all

conditions studied, the transmission of

the filter was less than 0.1%. For

space charge consisting of ions of one polarity, space charge density measurements made using HEPA filters and ion

counters may be compared directly. The

filter is well suited for accurate mea- surements of net space charge density.

[(301) 921-3121]

Recently Published

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

October 1, 1983 to December 31, 1983,

NBSIR 84-2861 (DoE) (May 1984).

This report documents the progress of

three technical investigations sponsored

by the Department of Energy and performed by or under a grant from the

Electrosystems Division, the National

Bureau of Standards. The work described

covers the period October 1, 1983 to

December 31, 1983. This report emphasizes the errors associated with mea- surements of electric and magnetic

fields, the properties of corona in

compressed SF6 gas, and the measurement

of interfacial phenomena in transformer

oil.

[(301) 921-3121]

Hillhouse, D.L., Petersons, 0., and

Sze, W.C., A Simplified System for

Calibration of Coupling Capacitor Voltage Transformers, IEEE Trans. Power

Apparatus and Systems, PAS-103, No. 5,

pp. 1092-1098 (May 1984).

Metering accuracy coupling capacitor

voltage transformers (CCVTs) are

installed permanently in 230-500 kV

substations and must be calibrated in

place. Several years ago, the National

Bureau of Standards (NBS) developed a field calibration system, with uncer- tainties of ±0.1% and ±0.3 mi Hi radian.

This paper describes a simpler system,

consisting of a 15 kV standard transformer and its power supply, a capacitive transfer standard divider, and a voltage comparator. In field tests,

this system agreed with the prototype to

within ±0.03% and ±0.1 milliradian. The new system can be transported in a non- dedicated truck, and operated from the

substation control house or a van. [(301) 921-3121]

Kelley, E.F. and Hebner, R.E.,

Electro-Optic E 1 e c t r i c - F i e 1

Measurements Near 01 1-Pressboard Interfaces, Conference Record 1984 IEEE

International Symposium on Electrical

Insulation, Montreal, Canada, pp. 311-

314 (June 11-13, 1984).

Electro-optical Kerr-effect measurements

are made to characterize the electric

field in the vicinity of pressboard

interfaces in transformer oil. The

interfaces are placed between parallel
Page 14 CEEE Technical Progress Bulletin - July 84

Power Systems Metrology , cont'd.

plate electrodes and are oriented parallel to the field direction and in con- tact with both electrodes. The electric

field enhancement in the liquid alone

(due to space charge) is compared with

the enhancement with interfaces

installed. These results serve to

better define the roles of space charge

and interfacial surface charging in

pressboard/transformer-oi 1 high-voltage

systems

[(301) 921-3121]

Kelley, E.F., Hebner, R.E., FitzPatrick,

G.J., and Forster, E.O., The Effect

of Aromatic Impurities on the Positive

Streamer Growth in Marcol 70, Confer- ence Record 1984 IEEE International

Symposium on Electrical Insulation,

Montreal, Canada, pp. 284-287 (June Ills, 1984).

The growth of positive streamers has

been photographed in Marcol 70 in the

presence and the absence of

dimethyl aniline (DMA). Marcol 70 is a fluid which is chemically similar to

transformer oil but with the aromatic

components removed. This combination

has been studied previously by other

authors, and was chosen for this work,

because it should provide useful

information on the contribution of

aromatic components to the electrical

properties of transformer oil. As in

earlier studies, it was noted that the

positive streamers initially propagate

at or near sonic speed. After the

streamer has propagated some distance

across the inter-electrode gap, a supersonic secondary streamer develops

that leads to breakdown. The initiation

of this second event is significantly

delayed by DMA. As in earlier studies

in n-hexane, the reason for this

behavior is assumed to be structural

changes in the streamers because of the

low ionization potential of DMA. These

structural changes, in turn, lead to a modification of the electric field

distribution between the positive

streamer tips and the plane cathode.

Information derived from the photographs

suggests that the field distribution

changes from a very nonuniform to a more uniform one, which would lead to the

observed higher breakdown voltages. The

data presented are not in complete

agreement with those reported in the

literature. This disagreement is

believed to be attributable to experimental differences.

[(301) 921-3121]

Ramboz, J.D. and Flach, D.R., HighCurrent Measurement Techniques, NBSIR

84-2881 (May 1984).

The measurement of very high ac currents

presents special problems in the selection of current sensors, instrumentation, and techniques. This report dis- cusses initial test results for Rogowski

coils and high-capacity current shunts

often used to measure large ac currents.

Eight Rogowski coils of three sizes and

ratings were tested at a nominal current

of 1000 A. The coils were compared

against an NBS precision air-core mutual

inductor to obtain a measure of complex

sensitivity, positional sensitivity,

gap-separation sensitivity (for the

split-coil types), and proximity effects

of the return conductor and of ferromagnetic material. The shunt was tested to assess the proximity effects of the

return conductor and of ferromagnetic

material. It was concluded that the

particular Rogowski coils tested would

not have measurement uncertainties of

less than a few percent unless extreme

care was taken in their calibration and

subsequent use. The measurements for

the shunt suggest somewhat less proximity effect than those for the coils. A

digital oscilloscope was evaluated for

possible use as a transient recorder.

The effective number of bits, the differential linearity, and the response to

a step function were determined.

[(301) 921-3121]

Van Brunt, R.J. and Anderson, W.E.,

Bibliography of Data on Electrical

Breakdown in Gases, NBS Technical

Note 1185 (April 1984).
CEEE Technical Progress Bulletin - July 84 Page 15

Power Systems Metrology , cont'd.

This report consists of a bibliography

of currently published data on electrical breakdown in gases. The bibliography contains a list of archival papers

and books published since 1950, an index

indicating the references that give

particular types of data for each gas,

an author index, and a list of relevant,

regular technical conferences. The

citations given in the bibliography

contain experimental or theoretical data

on breakdown which include:

(1) sparking potentials; (2) breakdown

voltages; (3) critical fields, or f i el dto-gas density ratios; (4) corona

inception voltages; (5) voltage-time

characteri sti cs ; (6) relative and

absolute dielectric strengths; and (7)

breakdown probabilities.

Types of data considered include those

which apply to uniform and nonuniform

fields; ac, dc, and impulse voltages;

and possible effects of particles, sur- faces, interfaces, and corona. This

bibliography is intended to serve as a guide in locating data on breakdown

which are most relevant to particular

applications. [(301) 921-3121]

Pulse Power Metrology

Released for Publication

Mcknight, R.H. and Schoenwetter, H.K.

Capacitive Sensors for Voltage Measurements in Pulse Power Systems, to be

published in IEEE Proc. 16th Power

Modulators Symposium [paper given at

Symposium, Roslyn, VA, June 18-26,

1984].

Capacitive E-field sensors are frequently used in pulse power systems to

measure voltage waveforms. Even though

these sensors, often called "E-dot"

sensors, are intrinsically simple in

design and application, accepted techniques to evaluate their performance are

not generally available. A laboratory

test line has been constructed to facilitate detailed examination of the electrical characteristics of the sensors

and to allow investigation of methods of

calibrating such devices. Both discrete

frequency and step-like signals can be

placed on the line and the response of

the sensor determined. Two different

probe geometries have been studied with

each showing the characteristic behavior

of the capacitive sensor, including

nanosecond rise time. The use of active

electronic techniques has also been

explored to extend the low frequency

bandwidth of the measuring system.

Sensors having a wide bandwidth are required for measurements of disconnect

transients in gas-insulated power frequency equipment. [(301) 921-3121]

Magnetic Materials and Measurements

Recently Published

Goldfarb, R.B. and Minervini, J.V.,

Calibration of AC Susceptometer for

Cylindrical Specimens, Review of

Scientific Instruments, 55 (5), pp.

761-764 (May 1984).

The absolute magnetic susceptibility of

cylindrical specimens is obtained with

an ac susceptometer whose calibration is

based on a calculation of mutual inductance. An axially magnetized cylinder

is modeled as a solenoid of the same

size. The mutual inductance between

such a solenoid and a pickup coil of

arbitrary dimensions is computed. The

susceptibility is then a function of the

mutual inductance, the cylinder length,

the magnitude and frequency of the ac magnetizing field, and the voltage induced on the pickup coil. Demagnetization factor and eddy-current effects are considered, an example is given, and

pickup coil compensation is discussed.

[(303) 497-3650]

Misakian, M. , Electrical Parameters in

60-Hz Biological Exposure Systems and

Their Measurement: A Primer, NBS

Technical Note 1191 (April l

( -m4).

This report presents material intended
Page 16

Magnetic Materials & Meas . , cont ' d

to facilitate the measurement of a number of electrical parameters that are

of importance during bioeffects research

involving 60-Hz electric and magnetic

fields. The parameters that are considered are the electric field

strength E, the magnetic induction or flux density B, field uniformity,

harmonic content, phase relations

between field components, and corona. Descriptions of the fields and methods

for their laboratory generation are surveyed. The text is purposely

elementary with references provided to

aid the interested reader in obtaining a fuller understanding of many of the

topics. It is shown that it is possible

to characterize reasonably well the

electric and magnetic fields used in

animal exposure studies with relatively simple instrumentation.

[(301) 921-3121]

Superconductors

Released for Publication

Goodrich, L.F., Vecchia, D.F., Pittman,

E.S., Ekin, J.W., and Clark, A.F.,

Critical Current Measurements on a NbTi

Superconducting Wire Standard Reference

Material

This report reviews the selection and

certification by NBS of a Standard Ref- erence Material (SRM) for the measurement of superconducting critical current. Procedures for preparing and

measuring five candidate conductors are described. Evaluation criteria are discussed by which one of the five con- ductors is selected for the critical

current SRM. The designated superconducting wire, SRM 1457, has been subdivided and wound onto 500 spools for

distribution. Certified critical current measurements were made on a sample

of these spools. Material variability,

or inhomogeneity, along the whole wire

is included in a statistical model based

on the dependence of critical current on temperature and electric field. CritiCEEE Technical Progress Bulletin - July 84

cal currents for SRM 1457 are certified

at magnetic fields of 2, 4, 6, and 8 T

for temperatures from 3.90 to 4.24 K and

electric field criteria from 0.05 to 0.2

yV/cm. Statistical tolerance limits and

estimated systematic errors are combined

to give an overall uncertainty in the

certified values. The total uncertainty

is no greater than 2.57 percent of the

reported critical current at any of the

four magnetic fields. [(303) 497-3143]

Other Electrical Systems Topics

Recently Published

Anderson, W.E., Microcomputer-Based

Software for Management of Calibration

Service, NBSIR 84-2863 (April 1984).

The majority of the calibration customers' concerns are directed not to the

technical details of the calibration

service but to the timely delivery of

that service. It is therefore proper

that the calibration services be closely

managed. For a Group or Division with a large calibration load, this can be a difficult task. The Applied Electrical

Measurements Group of the Electrosystems

Division has developed microcomputerbased software to provide considerable

assistance to the calibration manager.

With this database software, complete

information on the status of all the

calibration jobs is instantly available. [(301) 921-3121]

Pa 1 1 a , J.C. and Oravec, B.A., Compilers;

Sorrells, J.R., Editor, Electrical

and Electronic Metrology: A Bibliography of NBS Electrosystems Division's

Publications, NBS List of Publications 94 (March 1984).

This bibliography lists the publications

of the Electrosystems Division, Center

for Electronics and Electrical Engineering, NBS, and of its predecessor sec- tions, for the period January 1968 to

March 1984. A brief description of the

Division's technical program is given in

the introduction.

[Contact: Sorrells, (301) 921-2727]
CEEE Technical Progress Bulletin - July 84 Page 17

ELECTROMAGNETIC INTERFERENCE

Released for Publication

Adams, J.W. and Ondrejka, A.R.,

Shielding Effectiveness (SE) Measurement Techniques, to be published in

Proc. EMI/RFI Technical Conference, The

Society of Plastic Engineers, Inc.

[paper given at Conference, Chicago,

IL, June 18-20, 1984; based on paper

presented at the 1984 IEEE EMC Symposium, San Antonio, TX, April 1984].

Five methods of measuring shielding

effectiveness of the same lossy material were studied. Two of the methods were state-of-the-art involving time-domain

techniques. Other methods include dual

TEM cell, a variation of MIL-STD 285,

and a coaxial holder. Comparative

measurement data are shown, and insights

are offered as to interpretati on of

results. Some methods give agreement;

others do not. This is a preliminary

analysis, not a definitive work.

[(303) 497-3328]

Hill, D.A., A Numerical Method for

Near-Field Array Synthesis, [extracted from NBS Technical Note 1072

(February 1984)].

A numerical method for near-field array

synthesis is developed for arbitrary

array geometries. The intended application is for generating a planar field in

a test volume for electromagnetic sus- ceptibility testing, but the method is

valid for arbitrary field distributions.

A uniqueness theorem is utilized to

allow the field conditions to be

enforced on the surface of the test

volume rather than throughout the

volume. The synthesis method is a least

squares solution with a constraint on the source norm, and the constraint

keeps the field small outside the test

volume. Numerical results are shown for

the case of synthesizing a plane wave in

the near field of an array of line sources.

[(303) 497-3472]

Kanda, M., An Electric and Magnetic

Field Sensor for Simultaneous Electromagnetic Near-Field Measurements

Theory, [previously published as NBS

Technical Note 1062 (April 1983)].

This paper describes the theory of a single sensor to perform simultaneous

electric and magnetic near-field mea- surements. The theory indicates that it

is possible to obtain the magnetic-loop

and electric-dipole currents using a loop terminated with identical loads at

diametrically opposite points. The

theory also indicates that it is possible to obtain an ideal load impedance

for achieving equal electric and magnetic field responses of the loop.

Preliminary experiments have been performed using plane waves to verify these

results. [(303) 497-5320]

Ma, M.T. , Error Analysis of Radiation

Characteristics of an Unknown Interference Source Based on Power Measurements, to be published in the Proc.

1984 IEEE EMC [paper to be given at the

1984 IEEE International Electromagnetic

Compatibility Symposium, Tokyo, Japan,

October 16-18, 1984; based on NBS

Technical Note 1064 (June 1983)].

Theoretical derivations, extracted from

the power measurements made inside a transverse electromagnetic (TEM) cell, are given for analyzing the uncertainties in the source parameters and

radiation characteristics of an unknown

electrically small interference source. Numerical examples are also presented

for cases in which measurement errors

are assumed to be biased and unbiased

and for the worst-case measurement

situation. [(303) 497-3800]

Ma, M.T., Kanda, M., Crawford, M.L., and

Larsen, E.B., A Review of Some Electromagnetic Compatibility/ Interference

Measurement Methodologies.

This paper presents a review summary of

radiated emission and susceptibility

measurement methodologies currently . for assessing the electromagnetic com-
Page 18

Electromagnetic Interference , cont'd.

patibility/interference ( EMC/ EMI ) characteristics of electronic devices and

systems. In particular, measurement

methods using open sites, transverse

electromagnetic cells, reverberation

chambers, and anechoic chambers are discussed, in light of their technical

justifications and bases, their

strengths and limitations, and interpretation of the measured results.

[(303 497-3800]

Randa, J. and Kanda, M. MultipleSource, Multiple-Frequency Error of an Electric Field Meter.

Electric field meters (EFMs) are typically calibrated using single-frequency,

single-source standard fields. The

response to multiple sources or nonsinusoidal time dependence may be different,

however. Possible errors in a multiplesource, multiple-frequency environment

are analyzed for an EFM consisting of an electrically short dipole antenna with a diode load and an RF filter transmission

line. Also considered are errors in the

assumption of equal electric and magnetic energy densities in a multiple

plane-wave environment. Typical errors

of field intensity measurements are about one to three dB but in some circumstances they can exceed 10 dB.

[(303) 497-3150]

Wilson, P.F. and Ma, M.T., Some Problems Associated with Interpreting

Shielding Effectiveness Measurement

Results, to be published in Proc.

EMI/RFI Technical Conference, The

Society of Plastics Engineers, Inc.

[paper given at Conference, Chicago,

IL, June 18-20, 1984].

Shielding effectiveness is usually mea- sured in terms of insertion loss, that

is, the reduction in the fields coupled

between a transmitter and receiver

achieved by introducing the shield material or case, etc. Although the insertion loss concept is simply stated,

problems arise when one attempts to

CEEE Technical Progress Bulletin - July 84

Interpret specific insertion loss mea- surements. Insertion loss depends not

only on the shield introduced but also

on antenna types used and their positioning, the waveform Incident on the

shield, and contact resistance. Variations in these factors can yield almost

any level of insertion loss for the same shield sample. These concepts will be

discussed to emphasize both the difficulty in making even relative insertion

loss comparisons and the importance of

controlling and understanding insertion

loss parameters. [(303) 497-3842]

Wilson, P.F. and Ma, M.T., Small Obstacle Loading in a TEM Cell, to be

published in Proc. 1984 IEEE EMC [paper

to be given at the 1984 IEEE International Electromagnetic Compatibility

Symposium, Tokyo, Japan, October 16-

18, 1984].

A typical transverse electromagnetic

(TEM) cell measurement procedure involves calibrating an empty cell and

introducing a test object. The loading

effect due to the test object presence

is normally assumed to be negligible.

This paper examines the effect of the

test object and the validity of the

"non-perturbing" assumption. The analysis utilizes the small aperture theory,

as applied to the dual problem of small

obstacle scattering. The result is an equivalent T-network representation of

the test loading which allows the overall transmission line circuit to be

studied. In addition, evaluating the

scattered modes gives the field perturbation due to the test object.

[(303) 497-3842]

Wyss, J.C., Anson, W. , and Orr, D. Building Penetration Project, to be

published as NBSIR 84-3009.

This report documents a computer program

which calculates building attenuation of

electromagnetic radiation over the frequency range 10 kHz - 10 GHz. Attenuation (in dB) is computed from building

shape, dimensions, room layout, and the

electrical properties of construction
CEEE Technical Progress Bulletin - July 84 Page 19

Electromagnetic Interference , cont'd.

materials; no electromagnetic measurements are required. Details of the

structure and use of the program are given.

[Contact: Anson, (303) 497-3989]

Recently Published

Crawford, M.L. and Koepke, G.H.,

Operational Considerations of a Reverberation Chamber for EMC Immunity

Measurements - Some Experimental

Results, Proc. 1984 IEEE National

Symposium on Electromagnetic Compatibility, pp. 47-54 [paper given at

Symposium, San Antonio, Texas, April

24-25, 1984].

~his paper describes measurement procedures and results obtained from evaluation of a 2.74 m x 3.05 m x 4.57 m shielded cnamber modified into a mode

tuned reverberation chamber. A brief

description of the measurement setup is

given. Tne measurements described

include an evaluation of the chamber's:

f 1 ) excitation and receiving antennas'

voltage standing wave ratio and efficiency, ' 2 ) mode tuner effectiveness,

(3) loss, and (4) electromagnetic test

field statistical characteristics. In addition, tne measurement results of two

techniques to determine the field

strength in the reverberation chamber

are compared. Results shown cover the

frequency r ange 200 MHz to 18 GHz.

[(303) 497-5497]

Driver, L.D. and Reeve, G.R., Application of a Systematic Approach to an Investigation of HF Interference to a Shipboard Radar Set, Proc. 1984 IEEE

National Symposium on Electromagnetic

Compatibility, pp. 221-228 [paper given

at Symposium, San Antonio, Texas, April

24-26, 1984].

This paper describes an investigation of

electromagnetic interference to a shipboard radar caused by a co-located HF, one kilowatt transmitter. The test

procedures and analysis used to determine the points of E v field entry, the

corrective measures taxen, and tne

results achieved are described.

[(303) 497-3911]

Ondrejka, A.R. and Adams, J.W.,

Shielding Effectiveness (SE) Measurement Techniques, Proc. 1984 IEEE

National Symposium on Electromagnetic

Compatibility, pp. 249-256 [paper given

at Symposium, San Antonio, Texas, April

24-26, 1984].

Five methods of measuring shielding

effectiveness of a lossy material are compared. Comparative measurement data

is shown, and insights are offered as to

why the results do or do not agree.

This is a preliminary analysis, not a definitive work.

[(303) 497-3309]

Wilson, P.F. and Ma, M.T. , Small Aperture Analysis of the Dual TEM Cell,

Proc. 1984 IEEE National Symposium on Electromagnetic Compatibility, pp. 365-

369 [paper given at Symposium, San

Antonio, Texas, April 24-26, 1984].

This paper describes an analysis of dual

TEM cell coupling based on Bethe's small

aperture theory. This approach allows

one to model a variety of possible aperture shapes (circular, elliptical,

square, etc.), including material loaded

apertures of finite thickness. Measurements demonstrate that the theory

accurately predicts coupling for an un- loaded aperture.

[(303) 497-3842]

1984 CEEE CALENDAR

August 28-30 (Vail, CO)

Short Course on Optical Fiber

Measurements. This course Is

addressed to scientists and engineers

who are involved in fiber

characteri zati on . The course will

emphasize concepts, techniques, and
Page 20 CEEE Technical Progress Bulletin - July 84

CEEE Calendar*} cont'd.

apparatus used in measuring the

engineering parameters of

telecommunication-grade fibers. A

degree in electrical engineering or physics is assumed. The course will

last three days with 18 hours of class

time.

[Contact: Robert L. Gallawa (303)

497-3761]

profile, cut-off wavelength, mode

diameter/core geometry, fiber-device

(e . g . , joint, coupler, multiplexer)

evaluation, physical measurements, link

parameters (e.g., concatenation),

polarization characteristics, system

performance, field measurements, and

standards."

[Contact: Douglas L. Franzen (303)

497-3346]

September 10-11 (Santa Clara, CA)

VLSI Packaging Workshop. Sponsored by

NBS and the IEEE Components, Hybrids,

and Manufacturing Technology Society.

The VLSI Chip Packaging Workshop has

become the premier forum for technical

professionals in the field of package

development and analysis for VLSI

integrated circuits. The Workshop

addresses large chips, high-lead-count

packages, conventional and pin-gridarray chip-carriers, TAB and wire

bonding, and electrical and thermal

performance of packages. All attendees

are expected to be specialists working

in the field, and to participate in the

discussions. The Workshop is conducted

as a single plenary session, with each

of the four sessions containing a number

of half-hour papers in addition to

several shorter technical updates on current work. [Contact: G.G. Harman

(301) 921-3621]

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed include

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

high-power/high-energy lasers,

including, in addition to the subjects

given above, environmental degradation,

durability, fabrication, material growth

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303)

497-5341]

October 2-3 (Boulder, CO)

Symposium on Optical Fiber Measurements.

This symposium, the third in the series

of biennial meetings, is co-sponsored by

the National Bureau of Standards, the

Optical Society of America, and the

Optical Waveguide Communications

Committee of the Institute of Electrical

and Electronics Engineers. Papers have

been solicited "for any experimental or analytical aspect of the characterization of optical fibers and fiber optics

systems, including attenuation,

bandwidth/distortion, dispersion, index

November 6-8 (Las Vegas, NV)

1984 Government Microcircuit

Applications Conference (G0MAC). This

Conference, for which NBS serves as one

of a number of Government sponsors,

includes sessions covering applications

of silicon and gallium arsenide

microelectronic circuits, circuit design

and packaging considerations,

reliability considerations, radiation

hardness, signal processing

applications, and other systems

applications. With respect to circuits,

specific sessions are concerned with

memory technology, analog-to-digital and
CEEE Technical Progress Bulletin - July 84 Page 21

CEEE Calendar, cont'd.

di gi tal -to-anal og data converters,

gallium arsenide digital devices, and

gallium arsenide analog monolithic

integrated circuits. Conference

attendance is restricted to U.S.

citizens and immigrant aliens.

[Contact: Jay Morreale (212) 620-3371]

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference Materials for sale to the public. SRM 2526

applies to (lll)-oriented p-type silicon

surfaces and SRM 2527 to Tlll)-oriented

n-type silicon surfaces. Each SRM con- sists of a set of 16 specimens of silicon, approximately 6 x 12 mm in area and

mounted on beveled metal blocks for

convenient use in calibrating commercial

spreading resistance equipment. These

silicon chips have resistivities ranging

from about 0.001 to 200 fi»cm. The un- certainties in resistivity range typically from 2 to 5 percent for £-type

specimens and from 4 to 10 percent for

£-type. Two companion SRMs for (100)

silicon surfaces are about to be re- leased (2528, p-type and 2529, n-type).

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency;

National Security Agency

U.S. Air Force

Air Force Office of Scientific

Research; Air Force Satellite

Control Facility, Camp Parks;

Bolling Air Force Base; Hanscom

Field; Newark Air Force Station;

Rome Air Development Center; Space

Division; Wri ght-Patterson AFB

U.S. Army

Aberdeen Proving Ground; Aviation

Systems Command; Ballistic Missile

Defense Systems Command; Fort

Huachuca; Fort Monmouth; Harry

Diamond Laboratories; Materials & Mechanics Research Center

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Engineering Center

(Seal Beach); Naval Air Systems

Command; Naval Air Test Center;

Naval Sea Systems Command; Naval

Ship Research & Development Center;

Naval Ship Systems Engineering

Station; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Health and Human Services

Food and Drug Administration

National Center for Devices and

Radiological Health

National Institute for Occupational

Safety and Health

Department of Justice

Law Enforcement Assistance

Admi ni strati on Department of Transportation

National Highway Traffic Safety

Admi ni strati on Charles Stark Draper Laboratory

Environmental Protection Agency

GTE Satellite Corporation

International Copper Research

Association

International Telecommunications

Satellite Organization

Massachusetts Institute of Technology

National Aeronautics and Space

Admi ni stration

Lewis Research Center

National Radio Astronomy Observatory

National Security Agency

RCA

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-114A (REV. 2-80

U.S. DEPT. O F COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR-84-2877-2

2. Performing Organ. Report No. 3. Publ ication Date

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, April - June 1984 with 1984 CEEE Events Calendar

5. AUTHOR(S)

Compiler: J. Franklin Mayo-Wells

6 . PERFORMING ORGANIZATION (If joint or other than NBS, see instructions) 7 , Contract/Grant No. national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

8 . Type of Report & Period Covered

April - June 1984

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering • 10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bl iography or literature survey, mention it here) This is the seventh issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical

Progress Bulletin covers the second quarter of calendar year 1984. Abstracts are provided by technical area for both published papers and papers approved by NBS

for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

semiconductors; superconductors.

13. AVAILABILITY

[j^J Uni imited For Official Distribution. Do Not Release to NTIS

[H Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

‘ 20402.

| _x] Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

15. Price

USCOMM*DC 604S-P80
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

I Applied Electrical

I Measurements

Electronic Instrumentation and Metrology

I Antenna Systems

I Metrology

I Fields

I Characterization

I Interference

I Characterization

4

HMicrowave Metrology

Optical Electronic Metrology

JCryoelectronics

I Metrology

Superconductors

and Magnetic

Materials

KEY CONTACTS

H

I Silicon

I Characterization

I Process Control

I Measurements

I Micrometrology

Compound

Semiconductor

I Processing Facility

SEMICONDUCTOR

DEVICES ANO

ORCurrs

DIVISION

H

Integrated

Circuit Test

Structures

Device and Process

Modeling

Device Metrology

NBS/CEEE/FEB 04

Center (720)

Mr. Judson C. French (301) 921-3357

Dr. Alvin H. Sher (301) 921-3357

Ms. Carol P. Mullis (301) 921-3357

Director

Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief Dr. Robert A. Kamper (303) 497-35 3')

Semiconductor Materials and Processes Division (725)

Chief Mr. Robert I. Scace ( 301 ) 92 1 - 3 7 8 Semiconductor Devices and Circuits Division (726)

Dr. Oskars Petersons (301) 921-2326

Mr. Charles K.S. Miller (303) 497-3131

Chief Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center for Electronics and Electrical

Engineering, write to or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899 Telephone (301) 921-1357

USCOMM-N BS -DC