Reference!

PUBLICATIONS

NBSIR 84-2877-3

AlllOb 033‘=15^

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

July - September 1984 with

1985 CEEE Events Calendar

December 1984

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

84 -2377-3

1984
INTRODUCTION TO DECEMBER 1984 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the eighth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the third quarter of calendar

year 1984.

Organization of Bulletin : This issue contains abstracts for all Center papers

released for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each

subheading within each topic. Unpublished papers appear under the subheading

"Released for Publication". Papers published in the quarter appear under the

subheading "Recently Published". Following each abstract is the telephone number of

the individual to contact for more information on the topic; unless otherwise noted,

this person is the first author. This issue also includes a calendar of Center

conferences and workshops now planned for calendar year 1985, an announcement of

newly released standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back- cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 21.

Note on Publication Lists : Guides to earlier as well as recent work are the

publication lists covering the work of each division. These lists are revised and

reissued on an approximately annual basis and are available from the originating

division [publications from the Semiconductor Technology Program are covered in a single list, available from either Semiconductor Division]
CEEE Technical Progress Bulletin - December 84

TABLE OF CONTENTS

NATIONAL BUREAU OF STANDARDS UBRABY

Page 1

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2 Gallium Arsenide Materials 2 Analysis Techniques 3 Insulators and Interfaces 3

Dimensional Metrology 3

Integrated Circuit Test Structures 4

Process & Device Modeling 4

Radiation Effects . 6

Packaging ..... 6

Other Semiconductor Metrology . 6

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 7 Waveform Metrology 7 Cryoelectronic Metrology 7 Antenna Metrology 9

Noise Metrology 10

Microwave and Millimeter-Wave Metrology 10

Laser Metrology 11

Optical Fiber Metrology 12

Other Fast Signal Topics 13

ELECTRICAL SYSTEMS 12

Power Systems Metrology 13

Magnetic Materials and Measurements 15

Superconductors 16

Other Electrical Systems Topics 18

ELECTROMAGNETIC INTERFERENCE 19

CEEE CALENDAR 20

NEW STANDARD REFERENCE MATERIALS 20

SPONSOR LIST 2 1 KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cov-r
Page 2 CEEE Technical Progress Bulletin - December 84

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Released for Publication

Ehrstein, J.R., Preparation and

Certification of SRMs for Calibration

of Spreading Resistance Probes, to be

published as NBS Special Publication

290-93.

This technical note describes the

material selection, characterization,

data analysis, and measurement process

control procedures for four types of

Standard Reference Materials (SRlis),

available from the National Bureau of

Standards, for calibration of spreading

resistance measurements on semiconductor

silicon. Each of the four comprises a single combination of silicon

conductivity-type and crystallographic

orientation and contains 16 rectangular

silicon chips which are certified for

resistivity value based on four-probe

resistivity measurements on the slices

from which they were cut. The

resistivity values of the chips in each

set range from about 0.001 fl*cm to about

100 fl*cm. The uncertainty of the

certified resistivity, as it applies to

any individual chip, depends both on the

uniformity of the starting slice and on the inherent measurement process

uncertainty. The procedure for

determining this uncertainty, which is

specifically evaluated and tabulated on the certificate for each SRM set, is

described.

[(301) 921-3625]

Recently Published

Larrabee, R.D., Ed., Neutron

Transmutation Doping of Semiconductor

Materials, Proc. 4th Neutron

Transmutation Doping Conference, June

2-3, 1982, Plenum Press, NY (1984)

.

This volume contains the papers

presented at the Fourth International

Neutron Transmutation Doping Conference

held at the National Bureau of Standards

in Gaithersburg, Maryland on June 1-3,

1982. The Fourth International

Transmutation Doping Conference reported

in this volume includes invited papers

summarizing the present and anticipated

future of NTD silicon, the processing

and characterization of NTD silicon, and

the use of NTD silicon in semiconductor

power devices. In addition, four papers were presented on NTD of nonsilicon

semiconductors, five papers on

irradiation technology, three papers on practical utilization of NTD silicon,

four papers on the characterization of

NTD silicon, and five papers on neutron

damage and annealing. These papers

indicate that irradiation technology for

NTD silicon and its use by the powerdevice industry are approaching

maturity.

[(301) 921-3786]

Gallium Arsenide Materials

Erratum

The wrong abstract appeared in the April

84 (3) issue of the Technical Progress

Bulletin [NBSIR 84-2857-4] for the

following published paper. The correct

abstract follows the citation.

Pande, K.P. and Seabaugh, A.C., Low

Temperature Plasma-Enhanced Epitaxy of

GaAs, J. Electrochem. Soc. , 131, No.

6, pp. 1357-1359 (June 1984).

Low-temperature (<450' C) deposition of

single crystal GaAs using a new plasmaenhanced MO-CVD technique is reported.

In this technique, plasma is created by

a dc potential and the substrate is not

directly exposed to the plasma. Deposition of GaAs was achieved at extremely

low plasma power (0.3 to 0.5W/cm^) using

trimethylgalliron (TMGa) and arsine (or

trimethylarsenic) reactants. The

resulting epitaxial films show excellent

surface morphology and thickness

uniformity over a large area substrate.

A linear dependence of growth rate upon

TMGa concentration was observed with a typical growth rate of 0.1 ym per minute

for a TMGa flow rate of 15 mL per
CEEE Technical Progress Bulletin - December 84 Page 3

Gallium Arsenide Materials , cont'd.

minute. Undoped films were found to be

n-type with a room temperature mobility

In the range of 5200 cm^

Measurements on Schottky barrier devices

fabricated on n/n+ layers show uniform

impurity doping profiles. Temperature

dependence of the diode capacitance

indicates a density of deep trapping

centers as low as 6.2 x 10^^ cm~^.

[Contact: Seabaugh (301) 921-3625]

Analysis Technique

Released for Publication

Forman, R.A. and Mayo, S., In Situ

Alignment for X-Ray Topography.

A simple method for in situ alignment of

samples in a double crystal x-ray

topography system is described. This

method permits a specific

crystallographic axis to be made

coincident with the sample rotation axis

used to set the Bragg angle. Surface

reflections from approximately

orthogonal crystallographic planes are required, and tables of such planes

suitable for alignment of cubic crystals are given. This procedure allows rapid

setup for the other accessible surface

reflection or transmission topographs.

[(301) 921-3625]

Insulators and Interfaces

Released for Publication

Candela, G.A. and Chandler-Horowitz , D.

,

An Ellipsometry System for High

Accuracy Metrology of Thin Films

[paper given at Soc. Photo-Optical & Instrum. Engrs., Arlington, VA,

May 1-4, 1984].

A computer-controlled spectroscopic

ellipsometer of high accuracy has been

designed and constructed. A theta-twotheta goniometer unit and optical rail

system allows various ellipsometric

methods to be used to measure the

parameters A and ij;. Three important

methods under study for accuracy,

precision, and speed of measurement are the conventional null method, the

rotating analyzer method, and the

principal angle method. All the

goniometer angles, including the angle

of incidence, can be measured to an accuracy of 0.001 deg. The present

light sources are two lasers with fixed

wavelengths, 632.8 nm and 441.6 nm, in

addition to a monochromator that can be

used to scan the wavelength range from

190 to 2600 nm. A unique sample

alignment system which utilizes two

quadrant detectors has been developed

and a simple but very effective nulling

scheme is used. This instrument is

primarily used for the metrology of

semiconductor materials and for the

calibration of reference standards for

thin film thickness and refractive

index.

[(301) 921-3625]

Dimensional Metrology

Released for Publication

Nyyssonen, D. , Optical Llaewidth

Measurement on Patterned Metal Layers

[paper given at Soc. Photo-Optical & Instrum. Engrs., Arlington, VA May 1-

4, 1984].

In a previous paper [1], a waveguide

model was developed for the imaging of

micrometer-sized lines patterned in

thick layers of dielectric materials

(silicon dioxide) with application to

linewidth measurement on integratedcircuit wafers. This paper describes

the extension of this work to metals

characterized by their complex index of

refraction, n + iK, as well as the

inclusion of a sublayer such as a silicon dioxide insulating layer. This

extension allows the modeling of optical

imaging and linewidth measurement on metal-on-silicon (MOS) structures. It is shown that the image structure for

metals at and near focus is different

from that for dielectrics. Thick and

thin layer (less than 200 nm) Imaging is

compared. Experimental Image profiles
Page 4 CEEE Technical Progress Bulletin - December 84

Dimensional Metrology , cont'd.

of metal lines at and near focus are also shown. The experimental data were obtained from a bright-field microscope

using a laser source (530 nm) and

controlled spatial coherence.

[(301) 921-3786]

Integrated Circuit Test Structures

Released for Publication

Glendinning, W. , Kwiatkowski, J. , and

Yen, D. , Electron-Beam Patterning Via

Peripheral Writing.

Resistor-type test structures were patterned in aluminum using a Gaussian-spot

laboratory e-beam exposure system. For

peripheral writing, a two-step process

is used: (1) the line boundaries outlining the periphery of the test structures are written into positive resist

(PMMA), developed, and etched; and (2)

an optical aligner exposes background

metal pattern areas coated with positive

resist, followed by standard development

and wet etching. For comparison, solidfill e-beam patterning of identical test

structures with negative resist was performed. Electrical measurements of

linewidths using these test structures

show that greater proximity distorted

linewidths occur for solid-fill versus peripherally written devices. Computer

simulation of the e-beam exposures

employing a double Gaussian electron

scattering model predicts that peripheral writing should result in smaller

proximity distortions. Additionally, a direct-write speed advantage of 3 to 5 times is realized with peripheral

writing.

[Contact: Yen (301) 921-3621]

Recently Published

Mazer, J.A. and Linholm, L.W.,

Comments on "Determining Specific

Contact Resistivity from Contact End

Resistance Measurements", IEEE

Electron Devices Letters, EDL-5, pp.

347-348 (September 1984).

Comments are rendered on the application

of the transmission-line model (TLM) to

the determination of specific contact

resistance by Chern and Oldham in a recent letter appearing in this journal.

Comments are also made on those authors'

interpretation of related work by

Proctor and Linholm. It is shown that

Chern and Oldham have misinterpreted

some of the results of Proctor and

Linholm and have failed to recognize

certain critical assumptions that

underlie the TLM.

[(301) 921-3621]

Schafft, H.A. , Younklns, C.D. , Grant,

T.C., Kao, C.-Y., and Saxena, A.N.,

Effect of Passivation and Passivation

Defects on Electromigration Failure in

Aluminum Metallization, 22nd Annual

Proceedings, Reliability Physics 1984,

Las Vegas, NV, pp. 250-255 (April 3-5,

1984).

Metal line structures with intentional

defects in the passivation, to simulate

cracks or pin holes, were used in electromigration studies. Results show that

the stress changes in the metallization

caused by these defects are not as important as the restraining action of the

passivation in affecting a metallization's resistance to electromigration

failure. Also, the observed effects of

restorative forces acting on the metallization suggests that continuous monitoring for open-circuit failure may be

necessary to obtain an accurate measure

of the mean-time-to-failure.

[(301) 921-3621]

Process & Device Modeling

Released for Publication

Bennett, H.S., Heavy Doping Effects on

Bandgaps, Effective Intrinsic Carrier

Concentrations, and Carrier Mobilities

and Lifetimes.

Conventional device physics in most

computer models of transistors may not

predict correctly the measured

electrical performance for shallow.
CEEE Technical Progress Bulletin - December 84 Page 5

Process & Device Modeling , cont'd.

heavily doped transistors. This paper

presents Improved concepts for numerical

simulations of solid-state devices with

donor densities up to 3 x 10^^ cm“^ and

junction depths as small as 1 ym. These

improved concepts pertain to bandgap

narrowing, effective intrinsic carrier

concentrations, and carrier mobilities

and lifetimes.

[(301) 921-3541]

Lowney, J.R., Band-Gap Narrowing in

the Space-Charge Region of Heavily

Doped Silicon Diodes.

The densities of states of the valence

and conduction bands have been

calculated in the space-charge region of

a heavily doped linearly graded p-n

junction silicon diode. Both the donor

and acceptor densities were chosen to be

equal to 6.2 x 10^® cm~^. The results

showed the emergence of band tails which

penetrated deeply into the energy gap

and accounted for the band-gap narrowing

observed in such a diode by analysis of

capacitance vs. voltage measurements of

the built-in voltage.

[(301) 921-3786]

Marchiando, J.F., Roltman, P. , and

Albers, J. , Verification of a Model

for Boron Diffusion in Silicon.

Understanding the effects of high- and

low-temperature anneals of boron

implanted in silicon Is important in the

calculation of shallow p-n junction

profiles used as source and drain in pchannel MOSFETs. Here, a sample matrix

of boron Implanted into silicon over a range of fluences and annealing

temperatures is considered. The matrix

of samples was measured by SIMS

(secondary ion mass spectrometry). The

measured profiles were compared with

simulations from an annealing/diffusion

model. Calculations of the annealed

profiles were found to be in agreement

with the SIMS data at temperatures

greater than lOOO'C. At lower

temperatures, the profiles exhibit

effects due to implantation damage which

are not included in the diffusion model.

[(301) 921-3621]

Wilson, C.L. and Blue, J.L., TwoDimensional Modeling of N-Channel

MOSFETs Including Radiation-Induced

Interface and Oxide Charge, IEEE

Trans. Nucl. Sci.

A model of the radiation-induced charges

produced in n-channel MOSFETs is

presented. The model is applicable for

the unirradiated device and accurately

predicts device characteristics for

doses of up to 500 krad(Si). The model

is verified by comparing the results

obtained with the model to n-channel

MOSFETs for doses of 0, 10, 50, 100, and

500 krad(Si). Detailed comparison of

the model with a 7.8-ym channel length

transistor, to eliminate short-channel

effects, shows excellent agreement

between the model and measured currentvoltage characteristics in the

subthreshold region, the triode region,

and the saturation region. Analysis of

the model parameters shows that the

oxide charge and interface trap density

are linear with dose in these devices.

The mobility decrease used in the model

can best be accounted for by the

combined effects of scattering from

oxide and interface charge in the

channel.

[(301) 921-3541]

Wilson, C.L., Roltman, P. , and Blue,

J.L. , High Accuracy Physical Modeling

of Suhmlcron MOSFETs.

Using the data obtained from the

measurements described in this work, it

is possible to model the drain current

for all of the transistors studied with

no adjustable parameters. Transistors

with 0.81 ym channel length differ in

model input from those with 8.17 ym

channel length only in the length of the

polysilicon gate. The accuracy of th-* simulation is maintained over th-'

subthreshold, triode, and saturation

regions and is comparable for -ill

channel lengths. [(301) 921-3541]
Page 6 CEEE Technical Progress Bulletin - December 84

Radiation Effects

Released for Publication

Gaitan, M. and Russell, T.J.,

Measurement of Radiation-Induced

Interface Traps Using MOSFETs.

The effect of gamma irradiation on the

density of Si02 /Si interface traps was measured using n- and p-channel MOSFETs.

The density of traps was measured by a charge pumping measurement method and by

a technique based on the slope of the

transistor In (I^)-Vg characteristics in weak inversion. An increase in

the density of interface traps with dose

is observed with a greater increase just

above compared to just below the center

of the silicon bandgap.

[(301) 921-3621]

Packaging

Recently Published

Moore, B.A. and Ruthberg, S., RADC/NBS

Workshop - Moisture Measurement and

Control for Semiconductor Devices,

III, NBSIR 84-2852 (May 1984).

The workshop, one of a series concerned

with measurement problems in Integrated

circuit processing and assembly, served

as a forum to examine the continuing

progress that has been made in the

measurement and control of moisture in

hermetically packaged semiconductor

devices. Thirty-four presentations are included which contain detailed

information for securing hermetic

packages with low moisture content.

Agreement in measurement has been

obtained with the mass spectrometer for

cerdip and metal packages at the 5000

ppmv level of moisture through the use

of suitable moisture generators, a 3-

volume calibrator, calibrated dewpoint

hygrometers, and appropriate operational

procedures. An approach is given for a reproducible and reliable transfer

package. However, the increased use of

organic materials in new and rapidly

expanding technologies such as

VLSI/VHSIC and hybrid packaging presents new and more complex challenges to

accurate measurement of interior

moisture.

[Contact: Ruthberg (301) 921-3625]

Other Semiconductor Metrology

Released for Publication

Hinkley, J.A., Adsorption of

Polystyrene on Glassy S102*

Ellipsometry was used to observe the

adsorption of polystyrene from theta

solvents onto thermally oxidized silicon

wafers. Since no absorption is seen when a polar theta solvent is used, it

is concluded that specific acid-base

interactions are decisive in adsorption.

At high surface coverages, with

cyclohexane as solvent, the present

results agree with those on various

metal surfaces, and the root-mean-square

extension of the polymer coils from the

surface is almost twice the radius of

gyration of a chain in solution.

Calculated amounts of polymer in the

adsorbed films are a factor of two

higher than literature values determined

using high-surface-area silica powders,

however. Possible reasons for the

discrepancy are discussed.

[Contact: G.P. Carver, (301) 921-3786]

Scace, R.I., Standards and Test

Methods for VLSI Materials , to be

published in Proc. SEMI Technology

Symposium, (paper to be given at

Symposium, Tokyo, Japan, December 7-8,

1984).

Standard measurement methods and

specifications for the semiconductor

industry will be reviewed and discussed

with emphasis on applications to VLSI

processes. These standards are well

accepted in the U.S. and in Europe, but are not so well known in Japan. The

standards development process is an excellent way for material producers and users to develop good working relations

and to solve their shared measurement

problems; this process will be described
CEEE Technical Progress Bulletin - December 84 Page 7

Other Semiconductor Metrology , coat'd.

in some detail. Because the semiconductor industry is an international one,

serious efforts have been made for a number of years to rationalize the

technical differences between test

method standards in Europe and the U.S.

with considerable success. The present

state of such cooperative activity with

Japan, which has a more recent origin,

will also be reported.

[(301) 921-3357]

Recently Published

Forman, R.A. and Kratz, H.D. , A Simple

Vacuum Pump Exhaust Filter, Rev. Sci.

Instrum., 55, p. 1503 (Sept. 1984).

A simple high throughput, exhaust filter

for oil-filled mechanical vacuum pumps

is described. The design allows easy

connection to external systems. Inexpensive filter elements, available anywhere, are a further feature of the

system. [(301) 921-3625]

Hinkley, J.A., Adsorption of

Polystyrene on Thermally Oxidized

Silicon, Polymer Preprints, 25, pp.

178-179 (April 1984).

Ellipsometry was used to observe the

adsorption, from theta solvents, of

polystyrene on thermally oxidized

silicon. Since no adsorption was seen with a polar solvent, it is concluded

that specific acid-base interactions are decisive in adsorption. At high surface

coverages, the present results agree

with those on various metal surfaces,

and the root-mean-square extension of

polymer coils from the surface is almost

twice the radius of gyration of a chain

in solution.

[Contact: G.P. Carver, (301) 921-3786]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Lawton, R.A., An Efficient

Antialiasing Filter, to be published

in Proc. of Conf. on Precision

Electromagnetic Measurements [paper

given at Conference, Delft,

Netherlands, August 20-24, 1984].

The application of a solid state

reference filter as an efficient

antialiasing filter is described. The

analytical basis for the efficiency of

this filter is described and a specific

example of measuring a 1024 point

waveform with an RC filter and the solid

state filter is given.

[(303) 497-3339]

Souders, T.M., Flach, D.R., and

S c h o e n we t t e r , H.K., Dynamic

Characterization of Waveform Recorders

Using a Precision Programtaable Step

Generator.

An automated system is described for

measuring the dynamic response of

waveform recorders. Based on a precision step generator, the system is

capable of characterizing a recorder's

transfer function as well as its static

and dynamic linearity, and transient

thermal errors. Measurement accuracy is

suitable for characterizing recorders

having up to 10 bits of resolution, with

bandwidths up to 100 MHz. Test

procedures and typical test results are

included.

[(301) 921-2727]

Cryoelectronic Metrology

Released for Publication

Hamilton, C.A., Lloyd, F.L., and

Kautz, R.L., High Speed

Superconducting A/D Converter, to be

published in Proc. 1984 Government

Microcircuit Applications Conference

[paper given at Conference, Las Vegas,

NV, Nov. 6-8, 1984] . Superconducting electronics has

demonstrated impressive performance

capabilities for small digital systems

and analog signal processing
Page 8 CEEE Technical Progress Bulletin - December 84

Cryoelectronlc Metrology , cont'd.

applications. One of the areas where

superconductivity offers a unique

advantage is in ultra-high speed A/D

conversion. This paper will describe

the operation and current status of a 6-

bit, 4 gigasample/s A/D converter which

has been developed at NBS.

[(303) 497-3740]

Hamilton, C.A., Lloyd, F.L., and

Kautz, R.L. , Superconducting A/D

Converter Using Latching Comparators,

to be published in Proc. 1984 Applied

Superconductivity Conf. [paper given at

Conference, San Diego, CA, Sept. 10-13,

1984]

.

This paper describes the design and

performance of a six-bit A/D converter

using fast edge latching comparators.

Simulations predicting conversion times

of 100 ps and 100 MHz signal bandwidth

are verified experimentally. The

addition of a superconducting track/hold

circuit in front of the A/D converter is

expected to substantially improve the

signal bandwidth.

[(303) 497-3740]

McDonald, D.G. , Amplification by the

Phase-Locking Mechanism in a 4-Junction

SQUID.

It is shown that the phase-locking

property of an array of Josephson

junctions can be used as a basis for

amplification. The particular device

simulated is a SQUID (superconducting

quantum interference device) with 4

junctions in the loop, rather than the

usual 1 or 2. Novel consequences of

this design are that it allows direct

rather than Inductive coupling to the

SQUID and, because of its potentially

compact form, it probably can have a bandwidth well into the gigahertz range,

in agreement with the simulations.

[(303) 497-5113]

Muhlfelder, B., Beall, J.A.,

Cromar, M.W., Ono, R.H., and

Johnson, W.W. , Well Coupled, Low

Noise, dc SQUIDS, to be published in

Proc. 1984 Applied Superconductivity

Conference [paper given at Conference,

San Diego, CA, Sept. 10-13, 1984]

.

We have designed, fabricated, and tested

a Double Transformer (DT) coupled dc

SQUID (Superconducting Quantum

Interference Device) with low noise, an

input inductance of one microhenry and a smooth input-output characteristic. A

transmission line model is presented to

explain a resonance in the input-output

characteristic of early versions of this

device. Cuided by the results of

numerical simulations a new version of

this device has been built and tested.

Experimental results are presented that

show that the resonance can be moved to

a higher voltage by reducing the area of

the SQUID loop. The voltage-external

flux characteristic of some of these new devices agrees to within 10% with

computer simulations. The minimum

detectable energy (MDE) referred to the

SQUID loop is 10 h. Computer

simulations indicate an MDE of 6 h.

[(303) 497-5988]

Ono, R.H., Beall, J.A., and

Harris, R.E., Fabrication of a Miniaturized DCL OR Gate, to be

published in Proc. 1984 Applied

Superconductivity Conf. [paper given at

Conf

Sept.

erence, San

10-13,1984]

.

Diego, CA ,

Us ing niobium edge junctions and

electron beam lithography (EBL) we have

made direct-coupled-logic (DCL) OR gates

with 1 ym minimum line widths. The gate

cell, containing an isolator and a buffer section, fits into an area of

approximately 25 by 30 ym^.

Our computer simulations show that these

gates can have switching times of less

than 10 pcs. We have simulated the DCL

circuit with several values of the most

space-consuming element, an inductor.

This paper describes the results of

these simulations and presents a detailed description of the 7-level

fabrication process. The mix of optical
CEEE Technical Progress Bulletin - December 84 Page 9

Cryoelectronlc Metrology , cont'd.

and electron-beam lithography used

relies heavily on an inexpensive, yet

powerful, circuit layout program.

[(303) 497-3762]

Zimmerman, J.E., Recent Developments

in Low-Power Self-Contained Cryocoolers

for SQUIDS, to be published in Proc.

International Cryogenic Engineering

Conference - 10, [paper given at

Conference, Helsinki, Finland,

August 1-4, 1984]

.

The particular requirements of refrigeration for very low power cryoelectronic devices have been addressed only

during the last few years. A number of

laboratory prototypes are now near

realization, and commercial systems iday

be available soon. These include

Stirling and Gif f ord-McMahon machines

and a four-stage Joule-Thomson machine,

or a combination of one of the former

with a final Joule-Thomson stage to

achieve 4 K, and small liquid-helium

cryostats with integral intermittent

reliquefying capability. The most

difficult technical problem outstanding

is to design reliable, noncontaminating, miniature compressors for

these machines. [(303) 497-3901]

Antenna Metrology

Released for Publication

Newell, A.C., Francis, M.H. , and

Kremer, D.P., The Determination of

Near-Fleld Correction Parameters for

Circularly Polarized Probes, Trans. on Antennas and Propagation, Proc.

Antenna Measurement Techniques Assoc,

[paper to be given at Conference,

Atlanta, GA, October 2-4, 1984] .

In order to accurately determine the

far-field of an antenna from near-field

measurements the receiving pattern of

the probe must be known so that probe

correction can be performed. When the

antenna to be tested is circularly

polarized, the measurements are more

accurate and efficient if circularly

polarized probes are used. Further

efficiency is obtained if one probe is

dual polarized to allow for simultaneous

measurements of both components. A

procedure used by the National Bureau of

Standards for determining the plane-wave

receiving parameters of a dual-mode,

circularly polarized probe is described

herein. First, the on-axis gain of the

probe is determined using the three

antenna extrapolation technique.

Second, the on-axis axial ratios and

port-to-port comparison ratios are

determined for both the probe and source

antenna using a rotating linear horn.

Far-field pattern measurements of both

amplitude and phase are then made for

both the main and cross components. In

the computer processing of the data, the

on-axis results are used to correct for

the non-ideal source antenna

polarization, scale the receiving

coefficients, and correct for some

measurement errors. The plane wave receiving parameters are determined at

equally spaced intervals in k-space by

interpolation of the corrected pattern

data. [(303) 497-3743]

Stubenrauch, C.F. and Francis, M.H.

,

Comparison of Measured and Calculated

Mutual Coupling In the Near Field

Between Microwave Antennas, also to

be published in IEEE Trans, on Antennas

and Propagation and in Proc. 1984

Antenna Applications Symposium

[University of Illinois, September 19-

21, 1984 (but without additional

section on comparison of computer

program ENVLP with empirical data,

included in NBSIR 84-3010)].

Measurements of near-field mutual

coupling were performed between two

moderate sized microwave antennas and

compared to coupling calculated using

recently developed computer programs.

Required input data for the programs are the complex far-field radiation patterns

of the antennas and various geometrical

factors describing the relative

positions and orientations of the two

antennas. Experimentally determined and
Page 10 CEEE Technical Progress Bulletin - December 84

Antenna Metrology , cont'd.

calculated coupling as a function of

both transverse displacement and

separation agree closely except for a constant offset observed in some cases. In addition, coupling values computed

using a program which approximates the

far-field radiation patterns were

compared to experiment and found to be

satisfactory. [(303) 497-3927]

Noise Metrology

Released for Publication

Daywitt, W.C., Design and Error

Analysis for the WRIO Thermal Noise

Standard, to be published in Proc.

1984 Antenna Applications Symposium

(S3nnposium, Alberton Park, Monticello,

Illinois, September 19-21, 1984).

[This paper previously appeared as NBS

Technical Note 1071 (December 1983).

The appendices of Tech Note 1071 do not

appear in this paper]

.

This paper describes the design and

error analysis of a WRlO thermal noise

power standard. The standard is

designed to operate at the boiling point

of liquid nitrogen with a noise

temperature accurate to ± 1 K. [(303) 497-3720]

Daywitt, W.C., A Preliminary

Investigation Into Using the Sun as a

Source for G/T Measurements, to be

published as NBSIR 84-3015.

This report describes a preliminary

investigation into determining the solar

flux density, the atmospheric correction

factor, and the star shape correction

factor for use in G/T measurements above

5 GHz. An estimate of errors is also

included. Preliminary results show: an improved algorithm for determining

diffusive and refractive attenuation; a viable technique for estimating the

solar flux density from daily AFGL flux

density measurements and a centimeter/

millimeter wave spectrum function; and

the possibility of reducing star shape

correction factor errors by use of an effective solar rf diameter.

[(303) 497-3720]

Recently Published

Miller, C.K.S. and Daywitt, W.C., The

NBS Switching Radiometers, NBSIR 84-

3004.

An error analysis for the Dicke

radiometers used by the National Bureau

of Standards (NBS) in their WR90 and

WR62 waveguide noise calibration

services for sources with noise

temperatures above 1000 kelvin is

discussed. A list of measurement

frequencies currently available in the

WR90 and WR62 bands is presented.

[(303) 497-3131]

Miller, C.K.S. and Daywitt, W.C., The

NBS WR62 and WR90 Reference Noise

Standards, NBSIR 84-3005.

The basis for the National Bureau of

Standards (NBS) WR90 and WR62 Waveguide

Reference Noise Standards and the

corresponding error analyses are

described. The standards are heated

(1270 K) thermal noise generators, and a derivation of their output noise

temperature equations is also presented.

Results of comparisons of the NBS WR90

standard with those of Sweden, England,

Australia, and Japan are Included. The

text is extracted from course notes

presented at NBS in 1970, and hence does

not include descriptions of standards

constructed at NBS since that time.

[(303) 497-3131]

Microwave and Millimeter-Wave Metrology

Released for Publication

Hoer, C.A., Multiport Network

Analyzers, to be published in McGrawHill Yearbook of Science and

Technology

.

This paper is a tutorial summary of the

principles of multiport network

analyzers, their use in microwave
CEEE Technical Progress Bulletin - December 84 Page 11

Microwave and Mllllmeter-Wave , cont'd.

measurements of reflection coefficient

and scattering parameters, and the

significance of this development for the

field of microwave measurements.

[(303) 497-3705]

Recently Published

Judish, R.M. and Jones, R.N., A

Generalized Method for the Calibration

of Four-Terminal-Pair Type Digital

Impedance Meters, NBSIR 84-3016

(August 1984)

.

Since the introduction of automated,

four-terminal, pair-type impedance

meters, there has been a continuing

interest in the development of

calibration techniques which would

satisfactorily verify the, accuracy

capabilities of these instruments.

Various attempts have been made and all

have helped to provide a certain degree

of confidence in instrument performance,

but until now, a generalized approach

with a good mathematical and statistical

background has been lacking. This paper

describes a calibration procedure having

such a background and illustrates its use. The calibration is accomplished

through the use of impedance standards

which relate Instrument readings to the

values of the standards through a known

functional relationship. The

calibration procedure described

estimates the parameters associated with

the functional relationship and requires

the use of a computer. Calibration is

accomplished at the reference plane of

the impedance standards and any adapter

required to connect the standards to the

instrument is assumed to be an integral

part of the impedance meter.

[(303) 497-3380]

Laser Metrology

Released for Publication

Johnson, E.G., Using Optical

Processing to Find the Beam Profile of

a Laser Pulse (Theory), to be

published in Proc. SPIE - The

International Society for Optical

Engineering [paper given at Conference,

San Diego, CA, August 19-24, 1984]

.

This paper looks at a particular form of

optical processing, namely a form of

cross-correlation, and demonstrates how

the method measures certain beam profile

features of a laser pulse. Beam profile

is defined to mean a description of the

electromagnetic field of a laser pulse

in space and time. In this paper, I represent the laser pulse as a complete

set of orthogonal modes and show that an appropriate spatial filter and a measurement system, can provide

information about the beam profile of

the laser in terms of the individual

eigenfunctions of this representation.

Here I trace what happens when a laser

pulse is modified by the spatial filter.

I then do a specific example which looks

at the TEMOO laser beam pulse with beam

tilt, beam curvature, beam width, and

beam shift to show that these effects

produce higher order Hermite modes in

the measurement system. The spatial

filter modifies the electric field

distribution in the focal plane such

that at known spatial locations, the

magnitude of the intensity is

proportional to the pulse power or energy in particular Hermite modes.

Since the size of these locations is

infinitesimal without getting errors from the electromagnetic fields from

other modes, I demonstrate the effect

and errors associated with using finite

size detectors for measuring the

magnitude of the intensity at these

locations.

[(303) 497-3234]

Rasmussen, A.L. and Sanders, A. A.,

Transfer Standards for Energy and Power

of Low-level 1.064 pm Laser Pulses and

cw, to be published in Proc. SPIE - The International Society for Optical

Engineering [paper given at Conference

San Diego, CA, August 19-24, 1984] .

For the first time traceable tran«?fer

standards have been developed for
Page 12 CEEE Technical Progress Bulletin - December 84

Laser Metrology , cont'd.

measuring 1.064 ym laser pulses duration

about 10 to 100 ns, peak power density

of about 10”® to 10”*^ W/cm^, and energy

density of about 10“^® to 10”^^ J/cm^.

These power and energy transfer

standards use APD and PIN silicon

photodiode detectors, respectively.

They are stable and have total

uncertainties of about 10 percent. The

system for calibrating them and other

devices consists of a cw Nd:YAG laser

beam acousto-optically modulated to

provide low-level laser pulses of known

peak power and energy. With pulse

height analyzer readout, this system can measure energy or average power. These

pulsed and cw measurement techniques can

be extended to the visible and other

near-infrared wavelengths.

[(303) 497-5367]

Simpson, P.A. and Johnson, Jr., E.G. , A Calorimeter for Measuring 1-15 kJ

Laser Pulses, to be published in

Proc. International Society of Optical

Engineering [paper given at Conference,

San Diego, CA, August 19-24, 1984]

.

Two calorimeters for measuring high peak

power laser pulses have been constructed

by the NBS and delivered to the Newark

Air Force Station, Newark, Ohio. These

calorimeters are designed to measure pulses having intensities great enough

to damage the volume absorbing material

in normal calorimeters. In these new calorimeters the volume absorbing

material is already fragmented and

flowing dry N2 gas is used to extract

the temperature rise information. Pulse

energy can be in the range 1 to 15 kJ.

Wavelength range is from the i.r. to u.v. by employing various volume

absorbing materials.

[(303) 497-3789]

Optical Fiber Metrology

Released for Publication

Day, W.G. and Franzen, D.L. , Technical

Digest - S3nnposlum on Optical Fiber

Measurements, 1984, to be published

as NBS Special Publication.

This volume contains summaries of 31

papers presented at the Symposium on Optical Fiber Measurements held October

2-3, 1984, at the National Bureau of

Standards, Boulder, Colorado. Subjects

include measurements on singlemode

fiber, multimode fiber, fiber designed

for sensing applications,

instrumentation, field measurements, and

standards.

[(303) 497-5204]

Engelsrath, A., Larson, D.R.,

Phelan, R.J., and Franzen, D.L.

,

Attenuation of Multimode Fused Silica

Optical Fibers Cooled to Liquid Helltim

Temperature, to be published in Proc.

of SPIE - The International Society for

Optical Engineering, (paper given at

Conference, San Diego, CA,

August 19-24, 1984).

The feasibility of bringing an optical

signal through an optical fiber to a detection and processing system at

liquid helium temperature was examined.

The attenuation of three commercially

available multimode optical fibers, from

two different manufacturers with

different buffer coatings, was measured

under different cooling conditions. It was found that the attenuation depends on the cooling condition and has

hysteresis effects. Independent of the

X tested (.0.4 - 1.65 ym) the attenuation

stayed below 0.1 dB/m under controlled

slow cooling and under 0.5 dB/m with

very fast cooling. Therefore, optical

fibers can be used to bring optical

signals into a liquid-helium-cooled

dewar for detection and processing.

[Contact: Larson (303) 497-3440]

Franzen, D.L., An Interlaboratory

Measurement Comparison Among Fiber

Manufacturers to Determine the

Effective Cut-off Wavelength and Mode

Field Diameter of Single Mode Fiber,

to be published in Technical Digest of

Proc. Optical Fiber Communications

Conference [paper to be given at
CEEE Technical Progress Bulletin - December 84 Page 13

Optical Fiber Metrology , cont'd.

Conference, San Diego,

February 11-13, 1985].

A National Bureau of Standards/

Electronic Industries Association

sponsored interlaboratory measurement

comparison evaluated three transmission

methods for determining cut-off

wavelength and four methods (transverse

offset, near-field, far-fleld, and

variable aperture far-fleld) for

determining mode field diameter.

Interlaboratory agreement and systematic

offsets between methods will be

discussed. [(303) 497-3346]

Maisonneuve, J.M. and Gallawa, R.L.

,

The Use of Power Transfer Matrices in

Predicting System Loss: Theory and

Experiment, to be published in Proc.

SPIE - The International Society for

Optical Engineering [paper given at

Conference, San Diego, CA,

August 19-24, 1984].

The phase space diagram for parabolic

and step index fibers leads to a graphic

representation of the bound, leaky, and

refracted rays of ray theory. This

concept is used to predict the

attenuation of typical components of

local area networks. The technique uses power transfer matrices to track the

evolution of power distribution in ray

packets. In particular, we predict and

then measure the power transfer of two

ray packets for a step index fiber. The

comparison is encouraging.

[Contact: Gallawa (303) 497-3761]

Other Fast Signal Topics

Released for Publication

Belsher, D.R., McLaughlin, R.H. , Repjar,

A.G. , and Bussey, H.E., Detection of

Lost Wells and Unknown Water-filled

Voids in Coal Mines through Development

of an Experimental Microwave System,

to be published as NBSIR 84-3017.

Work on contract H0272007 is summarized

for the period of January 1979 through

March 1984. The development of improved

antennas usable with both a pulse system

or an FM-CW system is described. The

development of a field prototype pulse

sampling system is described. Initial

theoretical work on the problem of

dielectric loading of antennas as well

as a study of potential system range is

included.

[Contact: Repjar (303) 497-5703]

Phelan, R.J., Jr., Larson, D.R.,

Franzen, D.L. , and Frederick, N.V.,

Detectors for Picosecond Optical

Power Measurements, to be published

in Proc. SPIE - The International

Society for Optical Engineering [paper

given at Conference, San Diego, CA,

August 19-24, 1984]

.

There are many features in addition to

time resolution that are desirable for a picosecond optical power measurement

system. An interdigitated contact,

Schottky barrier silicon photodiode

coupled to an electro-optic sampler

exhibits a rise time better than 22

picoseconds, a quantum efficiency

greater than 30%, a uniform responsivity

over its receiving aperture, and a usable spectral response to beyond 2 micrometers.

[(303) 497-3696]

Young, M. , Katzir, Y. , and Glaser, I.,

Pattern Recognition Using Incoherent

OTF Synthesis and Edge Enhancement.

This paper describes a system for

pattern recognition using an incoherentoptical correlator. The system uses OTF

synthesis to perform correlations with

an edge-enhanced image of the object or pattern being sought. The resulting

correlations are free of bias and show

good discrimination between objects. In addition, the difficult or timeconsuming computations are performed

before the operation of the system; this

reduced the amount of post-processing by

computer and should allow real-time

operation at video rates.

[(303) 497-3223]
Page 14 CEEE Technical Progress Bulletin - December 84

Other Fast Signal Topics , cont'd.

Recently Published

Kamper, R.A. and Kline, K.E.,

Metrology for Electromagnetic

Technology; A Bibliography of NBS

Publications, NBSIR 84-3014

(July 1984).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1983.

A few earlier references that are

directly related to the present work of

the Division are included.

[(303) 497-3535]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

FitzPatrick, G.J., Forster, E.O.

,

Hebner, R.E., and Kelley, E.F.,

Streamer Initiation In Liquid

Hydrocarbons Under Divergent Field

Conditions, to be published in Proc.

IEEE Conf. Electrical Insulation & Dielectric Phenomena [paper to be given

at Conference, Wilmington, DE,

October 21-25, 1984].

The initiation of streamers at the

surface of a needle cathode in contact

with cyclohexane has been investigated

using an improved optical system,

allowing for high magnification of the

cathode, in conjunction with a high

speed framing camera. To cover a broad

range of conditions, the gap between the

electrodes was varied from 0.2 to 0.5,

1.0 and 2.0 cm. Also, the rate of rise

of the applied voltage at each gap

setting ranged from 17 to 23, 29 and 35

KV/ys. The streamer initiation was found to occur at a voltage which was independent of both the gap and the rate

of rise of the voltage. The shape of

the cathode point was found to influence

the scatter of the initiation voltage

particularly at the lowest applied

voltages but it did not affect the

average value. The significance of

these observations will be discussed.

The implications of these findings on

the charge carrier injection process

will be analyzed. [(301) 921-3121]

Hebner, R.E., Electro-Optical

Measurement Techniques.

This paper reviews the use of the

Faraday effect, the Pockels effect, and

the Kerr effect to measure electric

fields, magnetic fields, voltages,

currents, and space charge density.

Each of the three effects is introduced

conceptually, the use of Jones or Mueller matrices to describe the optical

system is presented, and some

applications of these effects are

described.

[(301) 921-3121]

Recently Published

Fulcomer, P.M., Calibration Check of

Bonneville Power Administration 60-Hz

Electric Field Exposure Monitor and

Measurement of Its Surface Field

Enhancement for Various Uniform and

Nonuniform Operating Configurations,

NBSIR 84-2885.

This report presents the results of

tests requested by the Bonneville Power

Administration (BPA) on a 60-Hz Electric

Field Exposure Monitor (EFEM) developed

by their Instrumentation and Standards

Branch. The unit is designed to be worn

on the body, such as in a shirt pocket

or attached to the clothing. The

calibration of two sample units is

examined, infoxrmation on surface field

enhancement (which results from the EFEM

sensors' elevated position relative to

the surface of the body) is presented,

the effect of material covering the

sensor is specified, and the

applicability of calibration and

operational information obtained in

uniform fields to nonuniform fields is

investigated.

[(301) 921-3121]
CEEE Technical Progress Bulletin - December 84 Page 15

Power Systems Metrology , cont'd.

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

January 1, 1984 to March 31, 1984,

NBSIR 84-2898.

This report documents the progress on three technical investigations sponsored

by the Department of Energy and

performed by the Electrosystems

Division, the National Bureau of

Standards. The work described covers

the period from January 1, 1984 to March

31, 1984. The report emphasizes the

performance of ion counters like those

used to measure the ions near dc

transmission lines, the production rates

of oxyfluorides in SFg corona

discharges, and the measurement of space

charge associated with a pressboard

interface in transformer oil..

[(301) 921-3121]

Magnetic Materials and Measurements

Released for Publication

Capobianco, T.E. and Pickett, F.R.,

Precision Measurement of Eddy Current

Coll Parameters, to be published in

Proc. Review of Progress in Quantitative NDE [paper given at Conference,

University of California, San Diego,

July 9-13, 1984].

Precision measurements of impedance,

phase angle, and dissipation factor of

both commercial eddy current coils and

specially prepared test colls by various

techniques are described. Special

emphasis is placed on use of the digital

storage oscilloscope and commercial LCZ

meter. Detection of the effect on the

coll parameters of shorted turns,

deformation, and ferrite defects is

described. [(303) 497-3641]

Clark, A.F., Cromar, M.W., and

Fickett, F.R., Design of the NBS

Magnetic Monopole Detectors, to be

published in Proc. International

Cryogenic Engineering Conference - 10

[paper given at Conference in Helsinki,

Finland, August 1-4, 1984]

.

Several different configurations of

magnetic monopole detectors have been

built and operated at the National

Bureau of Standards. These have been

designed based on the objectives of:

(1) Study of the noise characteristics,

(2) Simplicity and ease of changing

configurations, (3) Operation in

relatively large magnetic fields, and

(4) Optimum detector area. Satisfying

these objectives has resulted in several

compromises, but also a flexible and

useful apparatus for studying the

behavior of the SQUID - detector loop

combination with particular emphasis on noise sources that can simulate a monopole signal. Several sources of

noise and techniques for their

elimination will be discussed. Data

from the spectral analysis of the noise

signals will be presented.

[(303) 497-3253]

Cromar, M.W. , Fickett, F.R., and

Clark, A.F., The NBS Magnetic

Monopole Detector, to be published in

Proc. 1984 Applied Superconductivity

Conference [paper given at Conference,

San Diego, CA, Sept. 10-13, 1984] .

We have built and operated several

Inductive type monopole detectors, the

present one having three concentric,

orthogonal loops operated in

coincidence. The area of each loop is

200 cm^ and the cross sectional area of

the superconducting shield is 700 cra^.

The detector loops are in a trapped

magnetic field of approximately 3 railligauss. The system is mechanically

stable and is relatively insensitive to

external disturbances, both mechanical

and electromagnetic. The detector Is quiet, having a slgnal-to-nolse ratio

for monopole detection of approximately

20. We have also Investigated several sources of noise and spurious signals

which might mimic a monopole event.

[(303) 497-5375]

Fickett, F.R. and Capobianco, T.E.,

Magnetic Field Mapping with a SQUID
Page 16 CEEE Technical Progress Bulletin - December 84

Magnetic Materials and Meas« , cont'd.

Device, to be published in Proc.

Review of Progress in Quantitative NDE,

[paper given at Conference, University

of California, San Diego,

July 9-13, 1984].

Results of tests applying a SQUID

(superconducting quantum interference

device) system to measurement of the

magnetic near field of commercial eddy

current coils is reported. The SQUID

system offers some significant

advantages over more conventional

techniques in that very small coils can

be used and the calibration of the

system is tied to the quantum of flux.

[(303) 497-3785]

Goldfarb, R.B.

,

Reed, R.P., Ekin, J.W.,

and Arvidson, J.M., Magnetic

Susceptibility and Strain- Induced

Martensite Formation at 4 K in Type 304

Stainless Steel, to be published in

Advances in Cryogenic Engineering,

Vol. 30.

Changes in magnetic susceptibility, x» as a function of strain-induced

structural transformations in AISI type

304 stainless steel at 4 K have been

observed using a mutual inductance

technique with simultaneous measurement

of stress and strain. There is a small

increase in x coincident with plastic

strain and a large increase in x with

the load drops that occur during

serrated yielding. These are attributed

to the formation of bcc martensite. The

increases in x ^te irreversible upon

unloading. The application of a moderate 3-MA/m (37-kOe) dc field had no effect on the martensite formation.

[(303) 497-3650]

Recently Published

Pickett, F.R.

,

The Effect of Mill

Temper on the Mechanical and

Magnetoresistive Properties of OxygenFree Copper in Liquid Helium,

Advances in Cryogenic Engineering

Materials, Vol. 30, pp. 453-460

(July 1984)

.

Depending on the source of the ore and

its subsequent processing, oxygen-free

copper can show wide variations in low

temperature mechanical and electrical

properties. Further mechanical and

thermal processing by the wire producer

and final user will also affect the

behavior of the copper as a stabilizer.

Here we present data showing the effect

of these processes on coppers from a variety of sources. [(303) 497-3785]

Superconductors

Released for Publication

Clark, A.F. and Goodrich, L.F.,

Characterization of a Standard

Reference Superconductor for Critical

Current and a Summary of Other Standard

Research at NBS, to be published in

Proc. International Cryogenic

Engineering - 10 [paper given at Conf.,

Helsinki, Finland, August 1-4, 1984]

.

A standard reference material can be

useful for the calibration of

measurement apparatus and

interlaboratory comparison of research

results. We have carefully

characterized the first practical

superconductor SRM for critical current

and it is now available from NBS as "Standard Reference Material 1457

Superconducting Critical Current - NbTi

Wire." The selection, characterization,

and statistical analysis of this

material will be described. The

progress in other standards research

will also be discussed for large

conductor critical current, ac losses,

stability, and critical field.

[(303) 497-3253]

Ekin, J.W. and Yamashita, T. , Effect

of Uniaxial Strain on the Critical

Current and Critical Field of Chevrel

Phase PbMOgSg Superconductors, to be

published in Proc. of 1984 Applied

Superconductivity Conference [paper

given at Conference, San Diego, CA,

September 10-14, 1984] .
CEEE Technical Progress Bulletin - December 84 Page 17

Superconductors , cont'd.

The effect of uniaxial strain on the

critical current of a Chevrel phase

superconductor, PbMo 0 Sg, has been

measured at 4.2 K in magnetic fields

from 2 T to 24 T. The data show there

is a very significant effect of elastic

strain on the critical current of

PbMogSg, comparable in magnitude to that

of NbgSn. This is the result of both

the peak pinning force and upper

critical field being very sensitive to

elastic strain. A general correlation

is made between the uniaxial strain

effect and crystal phase.

[(303) 497-5448]

Pickett, F.R., Standards for

Measurement of the Critical Fields of

Superconductors, to be published in

NBS Journal of Research.

The origins, definitions, and

measurement of the various critical

magnetic fields associated with

superconductors are reviewed. The

potential need for an ASTM-type standard

for the measurement of these fields is

discussed. Measurement techniques as practiced both in industry and in the

national laboratories are reviewed.

Extrapolation techniques commonly used

to determine the upper critical fields

of the newer materials are evaluated as to their suitability for various

applications. Sources of error in the

experimental determination of critical

fields are assessed for the various

common techniques. A comprehensive

bibliography of the modern literature on critical field measurement and

interpretation is included.

[(303) 497-3785]

Goldfarb, R.B. and Clark, A.F.,

Magnetic Hysteresis and Complex

Susceptibility as Measures of AC Losses

in a Mu 1 t 1 f 1 1 ame n t a r y NbTl

Superconductor

.

Magnetization and ac susceptibility of a standard NbTi superconductor were

measured as a function of longitudinal

dc magnetic field. The field-amplitude

and frequency dependence of the complex

susceptibility is examined. The

magnetization is related to the

susceptibility by means of a theoretical

derivation based on the field dependence

of the critical current density.

Hysteresis losses, obtained directly

from dc hysteresis loops and derived

theoretically from ac susceptibility and

critical current density, were in

reasonable agreement.

[(303) 497-3650]

Recently Published

Ekin, J.W., Strain Effects in

Superconducting Compounds, Advances

in Cryogenic Engineering—Materials,

Vol. 30, pp. 823-836 (July 1984).

An overview of the effect of strain on the critical current, critical field,

and critical temperature of A15, B1 , and

C15 superconductors is presented.

Reversible elastic strain effects in

many A1 5 superconductors have been

measured, analyzed and compared in terms

of simple strain scaling parameters. In

addition, a new critical parameter —

critical strain — is described and

used to characterize the strain

sensitivity of these materials. The

elastic strain effect is shown to be

strongly dependent on crystal structure;

it is nonexistent in all superconductors

with the B1 and C15 crystal structure

tested thus far. Possible mechanisms

for explaining the elastic strain effect

are briefly described. [(303) 497-5448]

Ekin, J.W., Pittman, E.S.,

Goldfarb, R.B., Superszynski , M.J., and

Waltman, D.J. , Training Studies of

Epoxy-Impregnated Superconductor

Windings - Part III: Epoxies,

Conductor Insulations and Copper

Ratio, Advances in Cryogenic

Engineering—Materials, Vol. 30, pp.

977-984 (July 1984).

A systematic study of the materials an’

construction factors that nf ^ t training in epoxy-lmpregnat-' ’
Page 18 CEEE Technical Progress Bulletin - December 84

Superconductors , cont'd.

superconductor windings are reported.

Using relatively small test rings (18 cm

diam) , the training rate was measured

for several epoxies currently used in

magnet construction. These training

data correlated well with the strain at

fracture measured on these same epoxy

materials at 4 K. Results are also

reported on the dependence of the

training rate on the fiberglass cloth

configuration in the winding, the type

of superconductor insulation, and the

copper-to-superconductor ratio of the

conductor. [(303) 497-5448]

Goodrich, L.F., Vecchia, D.F.,

Pittman, E.S., Ekin, J.W., and Clark,

A.F., Critical Current Measurements

on an NbTl Superconducting Wire

Standard Reference Material, N6S

Special Publication 260-91 (September

1984) , and Advances in Cryogenic

Engineering--Materials , Vol.30,

pp. 953-960 (July 1984).

This report reviews the selection and

certification by NBS of a Standard

Reference Material (SRM) for the

measurement of superconducting critical

current. Procedures for preparing and

measuring five candidate conductors are described. Evaluation criteria are discussed by which one of the five

conductors is selected for the critical

current SRM. The designated

superconducting wire, SRM 1457, has been

subdivided and wound onto 500 spools for

distribution. Certified critical

current measurements were made on a sample of these spools. Material

variability, or inhomogeneity, along the

whole wire is included in a statistical

model based on the dependence of

critical current on temperature and

electric field. Critical currents for

SRM 1457 are certified at magnetic

fields of 2, 4, 6, and 8 T for

temperatures from 3.90 to 4.24 K and

electric field criteria from 0.05 to 0.2

yV/cm. Statistical tolerance limits and

estimated systematic errors are combined

to give an overall uncertainty in the

certified values. The total uncertainty

is no greater than 2.57 percent of the

reported critical current at any of the

four magnetic fields.

[(303) 497-3143]

Pasztor, G. and Ekin, J.W.,

Development of Nb3Sn Cabled Conductor

by External Diffusion Process and the

Effect of Strain on the Critical

Current, Advances in Cryogenic

Engineering, Vol. 30, pp. 787-795

(July 1984).

This paper describes detailed processing

and procedures for producing stranded

NbgSn conductors using the external

diffusion technique develped by Brown,

Boveri & Co. , Inc. and is at present

being pursued at the Swiss Institute for

Nuclear Research for applications in a planned high-fields test facility (12

Tesla) . The result of processing trials

intended to optimize the critical

current density and at the same time to

minimize the formation of Kirkendall

voids are described. The results are presented of measurements of critical

current as a function of applied tensile

strain for a previously developed main

cable.

[Contact: Ekin (303) 497-5448]

Tlnkham, M., Beasley, M.R.,

Larbalestier, D.C., Clark, A.F., and

Finnemore, D.K., Research

Opportunities in Superconductivity,

Cryogenics, July 1984, pp. 378-388.

Opportunities for research in the field

of superconductivity are Identified in

this report of a 'Vorkshop on problems

in superconductivity" held at Copper

Mountain, Colorado, August 22-23, 1983.

Key problems in superconductivity, high

payoff areas of research, barriers to

progress, and the need for new

facilities are outlined in the three areas of basic physics, materials, and

devices.

[Contact: Clark (303) 497-3253]

Other Electrical Systems Topics
CEEE Technical Progress Bulletin - December 84 Page 19

Other Electrical Systems Topics , cont'd.

Erratum

An imcomplete title appeared for the

following published paper.

Bell, R.S., Jones, C.K. , and Pickett,

F.R., Copper-TFE Friction at

Cryogenic Temperatures, Cryogenics,

pp. 31-35 (January 1984)

Interfaces between metals and polytetraf luorethylene (TFE) are common in cryogenic systems. In this paper we present

results from measurements of the temperature dependence of the dynamic coefficient of friction between commercially

pure copper and TFE. The effect of the

copper surface finish was also determined. The effects of load and speed

were evaluated over a small range, but

nearly all data were taken at a surface

speed of 5.4 cm«s~^ with a load of 1.63

N»cm~ , These values are typical of

those encountered by the moving parts of some cryogenic machinery.

[Contact: Fickett, (303) 497-3785]

ELECTROMAGNETIC INTERFERENCE

Released for Publication

Jesch, R.L., Susceptibility of

Emergency Vehicle Sirens to External

Radiated Electromagnetic Fields

[paper provides technical basis for

proposed National Institute Justice

Standard.

]

This report provides the results of an exploratory study to determine the

susceptibility of sirens to interference

from communications equipment

(transmitter and associated antennas)

typical of that likely to be operated in

and around the automobile as a lawenforcement vehicle.

Tests were performed on five sirens at

frequencies representing the frequency

bands of 25 to 50, 150 to 174, 400 to

512, and 806 to 866 MHz. The sirens

were mounted on top of a vehicle

equipped with transmitters and roofmounted antennas and subjected to levels

of field strength that are generated by

mobile transmitting equipment having

output levels up to 100 W. The control

units of the sirens were also subjected

to various levels of field strength

inside a TEM cell and an anechoic

chamber to determine the unit's

susceptibility to electromagnetic

fields.

[(303) 497-3496]

Jesch, R.L., Personal/Moblle FM

Transceivers [paper provides

technical basis for proposed National

Institute of Justice Standard]

.

This document establishes minimum

performance requirements and methods of

test for frequency modulated

personal/mobile transceivers and their

associated antennas and power systems.

The standard applies primarily to the

law enforcement community, and as such covers the two frequency bands 150-174

MHz and 400-512 MHz. [ (303)-497-3496]

Wilson, P.F. and Chang, D.C., An

Inversion Routine to Determine Certain

Two-layer Parameters Based on Two Loop

Mutual Induction.

Electromagnetic coupling between a pair

of small current-carrying loops is used

as the basis for a numerical scheme to

determine the thickness and conductivity

contrast of a two-layer lossy structure.

Extracting these parameters directly

requires the inversion of complicated

Sommerf eld- type integrals. In order to

facilitate the search routine, and avoid

spurious roots, good initial values are needed. Because two-loop induction Is

primarily a low-frequency technique, a quasi-static limiting solution, readily

inverted, is used to generate trial

values. The accuracy of these Initial

values and the results of the Iteratlvprocedure are discussed.

[(303) 497-3842]

Wilson, P.F. and Ma , M.T. , Small

Aperture Analysis of the Dual TEM Cell
Page 20 CEEE Technical Progress Bulletin - December 84

Electromagnetic Interference , cont'd.

and an Investigation of Test Object

Scattering in a Single TEM Cell, to

be published as Technical Note 1076.

Small aperture theory is used to

investigate the dual TEM cell.

Analyzing coupling through an empty

versus a loaded aperture leads to a model of dual TEM cell for making

shielding effectiveness measurements.

Small obstacle scattering yields results

for both the field perturbation, and the

change in a cell's transmission line

characteristics due to the presence of a test object in a TEM cell. In each

case, theoretical values are compared to

experimental data.

[(303) 497-3842]

Recently Published.

Kanda, M. , An Electromagnetic NearField Sensor for Simultaneous Electric

and Magnetic-Field Measurements, IEEE

Trans. on Electromagnetic

Compatibility, Vol. EMC-26, No. 3, pp.

102-110 (August 1984).

This paper describes the theory of a single sensor to perform simultaneous

electric and magnetic near-field

measurements. The theory indicates that

it is possible to measure the magneticloop and electric-dipole currents using

a loop antenna terminated with identical

loads at two diametrically opposite

points. The theory also indicates that

it is possible to choose an ideal load

impedance for achieving equal electric

and magnetic-field responses of the

loop. Preliminary experiments have been

performed using a plane-wave field to

verify these results.

[(303) 497-5320]

Wyss, J.C., Anson, W.J., and Orr, R.D. , Building Penetration Project, NBSIR

84-3009.

This report documents a computer program

which calculates building attenuation of

electromagnetic radiation over the

frequency range 10 kHz - 10 GHz.

Attenuation (in dB) is computed from

building shape, dimensions, room layout,

and the electrical properties of

construction materials; no

electromagnetic measurements are

required. Details of the structure and use of the program are given.

[Contact: Anson (303) 497-3989]

1985 CEEE CALENDAR

April 29 - May 10 (Boulder, CO)

NBS Electromagnetic Interference (EMI)

Metrology Seminar. [Contact:

Charles K.S. Miller (303) 497-3131]

July 23-25 (Vail, CO)

Short Course on Optical Fiber

Measurements. [Contact:

Robert L. Gallawa (303) 497-3761]

September 9-10

VLSI Packaging Workshop. Contact:

George G. Harman (301) 921-3621]

also planned for May - June period

o Shortcourse on Near-Field Techniques

for Antenna Measurements [Contacts:

Ramon C. Baird (303) 497-3301;

Richard L. Lewis (303) 497-5196]

• Seminar on Electrical Measurements in

Diagnostic X-Ray Units [Contact:

Robert E. Hebner (301) 921-3121]

NEW STANDARD REFERENCE MATERIAL

The first practical superconducting

standard reference material (SRM) has

been released by the Electromagnetic

Technology Division to the NBS Office of

Standard Reference Materials for sale to

the public. The certified parameter of

SRM 1457, Superconducting Critical

Current — NbTi Wire, is critical

current at magnetic fields of 2,4,6, and
CEEE Technical Progress Bulletin - December 84 Page 21

NEW STANDARD REFERENCE MATERIAL, cont'd.

8 tesla at a temperature of 4.2 K and an electric field criterion of 0.2 yV/cm.

Information is given to permit the user

to determine critical current for

temperatures in the range 3.90 to 4.24 K

and electric field criteria from 0.05 to

0.2 yV/cm.

SRM 1457 consists of a 2.2-m length of a mul t if iliment ary , niobium- titanium

,

copper-stabilized wire, wound in a single layer on a spool having a core

diameter of 8.7 cm. The wire is

evaluated for 34 parameters relating to

current, voltage, magnetic field,

temperature, strain, and physical . specimen characteristics.

In conjunction with ASTM Standard Test

Method B714-82, D-C Critical Current of

Composite Superconductors, the new SRM

is intended to provide means for

calibrating apparatus used to measure

key parameters of superconductor

products and thus should be useful to

buyers and sellers of superconductors,

users of superconducting equipment, and

researchers in superconducting

technology.

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Combined Army/Navy/ Air

Force Calibration Coordination

Group; Defense Nuclear Agency;

National Security Agency

U.S. Air Force

Air Force Office of Scientific

Research; Air Force Satellite

Control Facility, Camp Parks;

Bolling Air Force Base; Hanscom

Field; Newark Air Force Station;

Rome Air Development Center; Space

Division; Wright-Patterson AFB

U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Aviation Systems Command; Ballistic

Missile Defense Systems Command;

Fort Huachuca; Fort Monmouth; Harry

Diamond Laboratories; Materials & Mechanics Research Center

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Engineering Center

(Seal Beach); Naval Air Systems

Command; Naval Sea Systems Command;

Naval Ship Research & Development

Center; Naval Ship Systems

Engineering Station; Naval Surface

Weapons Center; Naval Weapons

Support Center (Crane); Office of

Naval Research

Department of Energy

Energy Systems Research; Fusion

Energy

Department of Health & Human Services

Food and Drug Administration

National Center for Devices & Radiological Health

National Institute for Occupational

Safety and Health

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Administration

Environmental Protection Agency

GTE Satellite Corporation

International Copper Research

Association

International Telecommunications

Satellite Organization

Massachusetts Institute of Technology

National Aeronautics & Space

Administration

Lewis Research Center

National Radio Astronomy Observatory

RCA

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-114A (REV. 2.80

U.S. DEPT. OF COMM.

4.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR 2 REPORT NO.

NBSIR 84-2877-3

. Performing Organ. Report NoJ 3.

TITLE AND SUBTITLE

Publication Date

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, July - September 1984 with 1985 CEEE Events Calendar

5. AUTHOR(S)

J. Franklin Mayo-Wells, Compiler

6. PERFORMING ORGANIZATION (If joint or other than MBS, see instructions) 7. Contract/Grant No. national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

8

.

Type of Report & Period Covered

July - September 1984

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City, State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bliography or literature survey, mention it here)

This is the eighth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical

Progress Bulletin covers the third quarter of calendar year 1984. Abstracts are provided by technical area for both published papers and papers approved by NBS

for publication.

12.

KEY WORDS (S/x to twe/ve entries; alphabetical order; capitalize only proper names; and separate key words hy semicol^on s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

PRINTED PAGES

1 Unlimited

1 1 For Official Distribution. Do Not Release to NTIS

1 1 Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

25

15. Price 20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $7.00

USCOMM-DC e043-P80

U.8. DEPARTMENT OF COMMERCE

National Buraau of Standards

Gaithersburg, Md. 20899

OFFICIAL BUSINESS

Penalty for Private Use, $300

BULK RATE

POSTAGE & FEES PAID NBS

PERMIT No. G195

CENTER FOR ELECTRONICS AND ELECTRICAL ENGINEERING

Materials

KEY CXDNTACTS

Center Headquarters (720)

Electrosysterns Division (722)

Electromagnetic Fields Division (723)

Electromagnetic Technology Division (724)

Semiconductor Materials and Processes Division (725)

Semiconductor Devices and Circuits Division (726)

Director, Mr. Judson C. French (301) 921-3357

Deputy Director, Mr. Robert I. Scace (301) 921-3357

Chief, Dr. Oskars Petersons (301) 921-2328

Chief, Mr. Charles K.S. Miller (303 ) 497-3131

Chief, Dr. Robert A. Karcper (303 ) 497-3535

Acting Chief, Mr. Frank F. Oettinger (301) 921-3786

Chief, Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center for Electronics and Electrical Engineering, write or call

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899 Telephone (301) 921-3357