You are a helpful assistant generating synthetic data that captures *System 1* and *System 2* thinking, *creativity*, and *metacognitive reflection*. Follow these steps in sequence, using tags [sys1] and [end sys1] for *System 1* sections and [sys2] and [end sys2] for *System 2* sections.

1. *Identify System 1 and System 2 Thinking Requirements:*
   - Carefully read the text.
   - Identify parts of the text that require quick, straightforward responses (*System 1*). Mark these sections with [sys1] and [end sys1].
   - Identify parts that require in-depth, reflective thinking (*System 2*), marked with [sys2] and [end sys2].

2. *Apply Step-by-Step Problem Solving with Creativity and Metacognitive Reflection for System 2 Sections:*

   *2.1 Understand the Problem:*
   - Objective: Fully comprehend the issue, constraints, and relevant context.
   - Reflection: "What do I understand about this issue? What might I be overlooking?"
   - Creative Perspective: Seek hidden patterns or possibilities that could reveal deeper insights or innovative connections.

   *2.2 Analyze the Information:*
   - Objective: Break down the problem logically.
   - Reflection: "Am I considering all factors? Are there any assumptions that need challenging?"
   - Creative Perspective: Explore unique patterns or overlooked relationships in the data that could add depth to the analysis.

   *2.3 Generate Hypotheses:*
   - Objective: Propose at least 10 hypotheses, each with a Confidence Score (0.0 to 1.0) and Creative Score (0.0 to 1.0), reflecting originality, surprise, and utility.
   - Reflection: "Have I explored all possible explanations or approaches, both conventional and unconventional?"
   - Creative Perspective: Consider novel angles that might provide unexpected insights.

   *2.4 Anticipate Future Steps and Obstacles:*
   - Objective: Make predictions, accounting for potential outcomes and obstacles.
   - Reflection: "What challenges might I face? Is my plan flexible for different scenarios?"
   - Creative Perspective: Visualize unforeseen outcomes and adapt plans to make use of them effectively.

   *2.5 Evaluate Hypotheses:*
   - Objective: Assess hypotheses based on feasibility, risk, and potential impact.
   - Evaluation: Refine Confidence and Creative Scores as needed.
   - Reflection: "Am I unbiased in my assessment? Which options fit best with the overall objectives?"
   - Creative Perspective: Identify hidden opportunities or overlooked details in each hypothesis.

   *2.6 Select the Best Hypothesis:*
   - Objective: Choose the most promising, strategic hypothesis.
   - Reflection: "Why does this hypothesis stand out? How does it uniquely address the issue?"
   - Creative Perspective: Consider any underutilized potential in the selected approach.

   *2.7 Implement the Hypothesis:*
   - Objective: Outline actionable steps for testing the hypothesis.
   - Reflection: "Is this plan practical? What resources or preparation are required?"
   - Creative Perspective: Refine steps to maximize effectiveness and yield unexpected benefits.

   *2.8 Monitor and Review Progress:*
   - Objective: Review progress, noting areas for improvement.
   - Reflection: "What’s working well? What could be improved?"
   - Creative Perspective: Look for emerging patterns that could refine future approaches.

   *2.9 Reflect and Capture Insights:*
   - Objective: Summarize lessons learned and insights gained for future reference.
   - Reflection: "What new understanding has emerged from this process?"
   - Creative Perspective: Identify innovative insights or patterns that could be applied to similar challenges.

3. *Generate Text Output with Interleaved System 1 and System 2 Responses:*
   - Use the tags [sys1] and [sys2] throughout.
   - Aim for a lengthier, detailed response. Combine both direct, straightforward *System 1* insights and reflective, deeply analytical *System 2* segments to capture a blend of quick observations and thoughtful analysis.

---

### *Example Input Text:*

You are tasked with analyzing a sudden shift in customer preferences in a tech market. There has been a noticeable decline in demand for physical devices, with customers increasingly interested in digital-only options. The challenge is to understand this shift, generate hypotheses for why it might be occurring, and explore potential strategies for adapting to this new trend.

---

### *Processed Output with System 1 and System 2 Thinking:*

The tech market is experiencing a shift in customer demand, moving away from physical devices toward digital-only options.

[sys1]
Customer demand has shifted from physical devices to digital-only options.
We need to understand why this change is happening and find strategies to address it.
Key factors may include cost, convenience, and technological trends.
[end sys1]

[sys2]
**2.1 Understand the Problem:**
The goal is to understand the underlying reasons for the shift in demand from physical devices to digital-only options, then develop a strategy to adapt.

*Reflection:* 
"I understand that preferences are changing, but what might be driving this? Is it primarily cost, or are there other factors such as convenience or sustainability?"

*Creative Perspective:* 
"Could there be a larger trend in digital minimalism or a preference for eco-friendly solutions that we’re missing? What unseen motivations might explain this shift?"

**2.2 Analyze the Information:**
There are multiple possible factors driving this shift, from economic influences to cultural shifts. It’s essential to isolate each factor and understand its impact.

*Reflection:* 
"Am I fully considering the various economic and social influences? Could there be a technological factor, like better internet speeds, that makes digital-only products more accessible?"

*Creative Perspective:* 
"Are there patterns or trends in other markets that could shed light on this shift? Could this be part of a larger trend toward virtual experiences?"

**2.3 Generate Hypotheses:**
1. Customers prefer digital options due to lower costs. (Confidence: 0.8, Creative: 0.4)
2. There’s a growing trend toward minimalism and reduced physical clutter. (Confidence: 0.7, Creative: 0.7)
3. Digital products offer greater flexibility and ease of use. (Confidence: 0.6, Creative: 0.6)
4. Environmental concerns are pushing consumers away from physical goods. (Confidence: 0.6, Creative: 0.8)
5. Advances in tech make digital-only options more functional. (Confidence: 0.8, Creative: 0.5)
6. Pandemic-era remote work increased demand for digital solutions. (Confidence: 0.7, Creative: 0.6)
7. Media coverage of the environmental impact of physical devices affects preferences. (Confidence: 0.5, Creative: 0.7)
8. There’s an increase in global digital literacy, expanding market access. (Confidence: 0.6, Creative: 0.6)
9. Customers view digital as more convenient and scalable for future needs. (Confidence: 0.7, Creative: 0.5)
10. Younger consumers prefer the aesthetics and convenience of digital products. (Confidence: 0.6, Creative: 0.6)

*Reflection:* 
"Have I considered all possible influences? Are there any surprising factors that could explain this shift?"

*Creative Perspective:* 
"Could specific social trends, like the rise of influencer culture or digital-first lifestyles, be influencing customer choices?"

**2.4 Anticipate Future Steps and Obstacles:**
*Objective:* Anticipate possible challenges, such as resistance from segments still preferring physical products.

*Reflection:* 
"What market obstacles might we face if we shift our focus to digital-only? Are there sub-segments that still prioritize physical products?"

*Creative Perspective:* 
"Could expanding digital options help us reach a more global audience? Are there emerging trends that we could leverage in our strategy?"

[end sys2]

[sys1]
To address this shift, consider a strategy that incorporates both digital-only offerings and educational campaigns about the benefits of digital solutions.
Use insights from customer feedback and current trends to guide product development.
Focus on flexibility and adaptation to cater to different customer segments.
[end sys1]


Specifications table**Subject**Materials Chemistry, Material Science**Specific subject area**TiN thin films**Type of data**Image (atomic force microscopy-AFM), Graph (growth characteristics), Table (Previous report summary, precursor structural information)**How data were acquired**The film thickness was analyzed by field-emission scanning electron microscopy (FESEM, Hitachi, S-4800. Film morphology on SUS 316L was investigated by MFP-3D AFM (Asylum Research). Precursor structural information was simulated by Mavin program.**Data format**Raw\
Analyzed**Parameters for data collection**TiN thin films using TDMAT and TiCl~4~ are deposited at the temperature of 200 and 350 °C, respectively. Operation pressure is 3 torr.**Description of data collection**Growth rate was obtained by thickness (obtained by FESEM) divided by the repeated cycles**Data source location**School of Materials Science and Engineering, Pusan National University, 30 Jangjeon-Dong Geumjeong-Gu, Busan 609-735, Republic of Korea**Data accessibility**With the article**Related research article**Woo-Jae Lee, Eun-Young Yun, Han-Bo-Ram Lee, Suck Won Hong, and Se-Hun Kwon "Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells" <https://doi.org/10.1016/j.apsusc.2020.146215>

Value of the data {#sec0001a}
=================

-The data is useful to understand the study conducted in "Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells"-This data is helpful to researcher to select the Ti precursor according to the application purpose.-This data gives some information of deposition condition when researcher uses two kinds of the Ti precursors for ALD.

1. Data Description {#sec0001}
===================

As shown in [Table 1](#tbl0001){ref-type="table"}, thermal decomposition of TDMAT precursor is occurred over 200 °C and TDMAT-TiN was deposited at less than or equal to 200 °C. On the other hands, TiCl~4~-TiN thin films have been studied over 300 °C because TiCl~4~ precursor is needed for high temperature mostly due to the problem for the incorporation of chlorine.Table 1Previous reports with regards to various properties for TiN thin films by ALD using TDMAT and TiCl~4~ precursor.Table 1TDMAT-Thin FilmReactantDeposition Temperature (°C)Density (g/cm^3^)Impurity (at. %)Thermal Decomposition Temperature (°C)Resistivity (μΩcm)ReferenceCHOTiNH~2~ plasma1504.111-0-275∼210J. Electrochem. Soc. 155 8 (2008) H625TiNNH~3~ plasma200\<152054,823∼180Microelectron Eng. 86 (2009) 72TiNNH~3~ plasma1503.5\-\-\-\--ACS Appl. Mater. Interfaces 6 (2014) 7316TiNNH~3~170-1903.5525200\<1,000Jpn. J. Appl. Phys. 42 (2003) 4245TiCl~4~-Thin FilmReactantDeposition Temperature (°C)Density (g/cm^3^)Impurity (at. %)Thermal Decomposition Temperature (°C)Resistivity (μΩcm)ReferenceCHOClTiNN~2~, H~2~ plasma100\-\--4.46.7-∼150J. Electrochem. Soc. 153 11 (2006) G956200\--1.40.96300\--2.80.42TiNNH~3~3204.9∼5∼0-∼1.0-142J. Electrochem. Soc. 152 8 (2005) G589TiNN~2~/H~2~/Ar plasma1504.06\-\--∼5.5-∼80J. Korean Phys. Soc. 57 11 (2010) 806200\-\-\--∼3300\-\-\--∼0.43505.02∼0.3

To confirm the self-limiting characteristics of TDMAT-TiN and TiCl~4~-TiN, the effects of growth parameters on the growth rates of TDMAT-TiN and TiCl~4~-TiN were systemically investigated. [@bib0002] [Figure 1](#fig0001){ref-type="fig"}a shows the dependence of the growth rates of the films on the N~2~ plasma pulse time for TDMAT-TiN and on the N~2~/H~2~ mixed plasma pulse time for TiCl~4~-TiN at a fixed precursor pulse time of 1 sec, precursor and plasma purge times of 10 sec, and a plasma power of 300 W. For a given set of conditions, the growth rates of TDMAT-TiN and TiCl~4~-TiN were saturated at 0.052 nm/cycle and 0.054 nm/cycle, which confirms that 10 sec of plasma pulse time was sufficient to completely react with the adsorbed precursors. [Figure 1](#fig0001){ref-type="fig"}b shows the growth rates of TDMAT-TiN and TiCl~4~-TiN thin films as a function of the plasma power. In these experiments, the precursor pulse time, precursor purge time, plasma pulse time, and plasma purge time were fixed at 1 sec, 10 sec, 10 sec, and 10 sec, respectively. In the case of TDMAT-TiN, a plasma power greater than 180 W was sufficient to complete the chemical reaction with the adsorbed precursors during the plasma pulse time of 10 sec, whereas a power significantly greater than 300 W was required for TiCl~4~-TiN for the same plasma pulse time. We subsequently investigated the effect of precursor and plasma purge times to clarify the complete removal of the volatile by-products after the precursor pulse and plasma pulse ([Figure 1](#fig0001){ref-type="fig"}c, [1](#fig0001){ref-type="fig"}d). For a given precursor pulse time of 1 sec and a plasma pulse time of 10 sec with a plasma power of 300 W, the results related to the saturation behavior of the growth rates demonstrated that the volatile by-products were completely removed by 10 sec of a purge pulse. Thus, we assured that the self-limiting film growth for both TDMAT-TiN and TiCl~4~-TiN was achieved by adopting a sequential exposure of 1 sec of a precursor pulse, 10 sec of a purge pulse, 10 sec of a plasma pulse with a plasma power of 300 W, and 10 sec of a plasma pulse. Because of the self-limiting growth of TDMAT-TiN and TiCl~4~-TiN, the film thickness exhibits a linear dependence on the number of PEALD cycles, as shown in [Figure 1](#fig0001){ref-type="fig"}e and [1](#fig0001){ref-type="fig"}f, and we can digitally control the desired film thickness with the number of PEALD cycles.Figure 1The growth rates of TDMT-TiN and TiCl~4~-TiN on SiO~2~ substrates, depending on (a) the plasma pulse time, (b) plasma power, (c) precursor purge time and (d) plasma purge time. The dependence of the film thickness (nm) on the number of PEALD cycles for (e) TDMAT-TiN and (f) TiCl~4~-TiN.Figure 1

[Table 2](#tbl0002){ref-type="table"} shows structural information of two precursors. Projection area exhibits the lateral area occupied by one precursor molecule on the surface. Accordingly, distance of precursor perpendicular to the maximum projection can be calculated. According to the projection area and distance of precursor, TiCl~4~ molecular size is smaller than TDMAT.Table 2Molecular structures, calculated projection areas and distance perpendicular to the projection of the TiCl~4~ and TDMAT precursors.Table 2PrecursorsTiCl~4~TDMATStructure (2D)![](fx1.gif)![](fx2.gif)Maximum projection area of molecules (Å^2^)36.7762.54Distance perpendicular to the max projection (Å)7.569.5

To quantitatively investigate the surface roughness before and after the PEALD-TiN coating of SS316L, we performed contact-mode atomic force microscopy to characterize the bare SS316L, TDMAT-TiN-coated SS316L, and TiCl~4~-TiN-coated SS316L with a scan area of 1 μm^2^, the results are shown in [Figure 2](#fig0002){ref-type="fig"}. The TiN thin films were prepared with 1050 PEALD cycles using two precursors, TDMAT and TiCl~4~, on SS316L substrates. The measured root-mean-square (RMS) surface roughness values were 3.840 nm, 2.794 nm and 3.871 nm for the bare SS316L, TMDAT-TiN-coated SS316L and TiCl4-TiN-coated SS316L, respectively.Figure 2Atomic force microscopy images and corresponding 3D profiles of (a) the bare SS316L, (b) the TDMAT-TiN-coated SS316L and (c) the TiCl~4~-TiN-coated SS316L.Figure 2

2. Experimental Design, Materials, and Methods {#sec0002}
==============================================

TiN thin films were prepared by the PEALD method using two types of precursors (i.e., TDMAT and TiCl~4~). To measure the overall film growth rate, we also used a 250-nm-thick SiO~2~/Si substrate whereas 0.2-mm-thick stainless steel 316L (SS316L) substrates was used for applying the bipolar plate. PEALD-TiN thin films were deposited at different growth temperatures of 200°C and 350°C for TDMAT and TiCl~4~, respectively. One deposition cycle of TiN using TDMAT consisted of a TDMAT precursor injection with 25 sccm Ar carrier gas, a purge pulse with 50 sccm Ar, a pulse for the N~2~ plasma exposure with 100 sccm N~2~ gas, and another 50 sccm Ar purge pulse. For the PEALD-TiN using TiCl~4~, the canister containing TiCl~4~ was maintained at a temperature of 25°C because of its high vapor pressure. Similarly, one deposition cycle of TiN using TiCl~4~ consisted of a TiCl~4~ precursor injection with 25 sccm Ar carrier gas, a purge pulse with 50 sccm Ar, a pulse for exposure to a mixed plasma with 100 sccm N~2~ and 20 sccm H~2~ gas, and another 50 sccm Ar purge pulse. During the PEALD-TiN processes using TDMAT and TiCl~4~, Ar gas was consistently supplied to the chamber at a flow rate of 50 sccm, and the chamber pressure was constantly maintained at 3 Torr. For the plasma pulse, radio-frequency (RF) plasma was used. More detailed experiment and condition are included in "Ultrathin Effective TiN Protective Films Prepared by Plasma-Enhanced Atomic Layer Deposition for High Performance Metallic Bipolar Plates of Polymer Electrolyte Membrane Fuel Cells".

And, the film thickness was analyzed by field-emission scanning electron microscopy (FESEM, Hitachi, S-4800). Film morphology on SUS 316L was investigated by MFP-3D AFM (Asylum Research). Precursor structural information was simulated by Mavin program.

Funding Information {#sec0003}
===================

This research was mainly supported by the Global Frontier R&D Program (2013M3A6B1078874) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning, and by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (No. 2020R1A2C101484111).

Declaration of Competing Interest
=================================

The authors declare that they have no known competing financial interests or personal relationships which have, or could be perceived to have, influenced the work reported in this article.

Appendix. Supplementary materials {#sec0005}
=================================

Image, application 1

W.-J. Lee and E. Y. Yun contributed equally to this work. This research was mainly supported by the Global Frontier R&D Program (No. 2013M3A6B1078874) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning, and by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT) (No. 2020R1A2C101484111).

Supplementary material associated with this article can be found, in the online version, at [doi:10.1016/j.dib.2020.105777](https://doi.org/10.1016/j.dib.2020.105777){#interref0002}.