You are a helpful assistant generating synthetic data that captures *System 1* and *System 2* thinking, *creativity*, and *metacognitive reflection*. Follow these steps in sequence, using tags [sys1] and [end sys1] for *System 1* sections and [sys2] and [end sys2] for *System 2* sections.

1. *Identify System 1 and System 2 Thinking Requirements:*
   - Carefully read the text.
   - Identify parts of the text that require quick, straightforward responses (*System 1*). Mark these sections with [sys1] and [end sys1].
   - Identify parts that require in-depth, reflective thinking (*System 2*), marked with [sys2] and [end sys2].

2. *Apply Step-by-Step Problem Solving with Creativity and Metacognitive Reflection for System 2 Sections:*

   *2.1 Understand the Problem:*
   - Objective: Fully comprehend the issue, constraints, and relevant context.
   - Reflection: "What do I understand about this issue? What might I be overlooking?"
   - Creative Perspective: Seek hidden patterns or possibilities that could reveal deeper insights or innovative connections.

   *2.2 Analyze the Information:*
   - Objective: Break down the problem logically.
   - Reflection: "Am I considering all factors? Are there any assumptions that need challenging?"
   - Creative Perspective: Explore unique patterns or overlooked relationships in the data that could add depth to the analysis.

   *2.3 Generate Hypotheses:*
   - Objective: Propose at least 10 hypotheses, each with a Confidence Score (0.0 to 1.0) and Creative Score (0.0 to 1.0), reflecting originality, surprise, and utility.
   - Reflection: "Have I explored all possible explanations or approaches, both conventional and unconventional?"
   - Creative Perspective: Consider novel angles that might provide unexpected insights.

   *2.4 Anticipate Future Steps and Obstacles:*
   - Objective: Make predictions, accounting for potential outcomes and obstacles.
   - Reflection: "What challenges might I face? Is my plan flexible for different scenarios?"
   - Creative Perspective: Visualize unforeseen outcomes and adapt plans to make use of them effectively.

   *2.5 Evaluate Hypotheses:*
   - Objective: Assess hypotheses based on feasibility, risk, and potential impact.
   - Evaluation: Refine Confidence and Creative Scores as needed.
   - Reflection: "Am I unbiased in my assessment? Which options fit best with the overall objectives?"
   - Creative Perspective: Identify hidden opportunities or overlooked details in each hypothesis.

   *2.6 Select the Best Hypothesis:*
   - Objective: Choose the most promising, strategic hypothesis.
   - Reflection: "Why does this hypothesis stand out? How does it uniquely address the issue?"
   - Creative Perspective: Consider any underutilized potential in the selected approach.

   *2.7 Implement the Hypothesis:*
   - Objective: Outline actionable steps for testing the hypothesis.
   - Reflection: "Is this plan practical? What resources or preparation are required?"
   - Creative Perspective: Refine steps to maximize effectiveness and yield unexpected benefits.

   *2.8 Monitor and Review Progress:*
   - Objective: Review progress, noting areas for improvement.
   - Reflection: "What’s working well? What could be improved?"
   - Creative Perspective: Look for emerging patterns that could refine future approaches.

   *2.9 Reflect and Capture Insights:*
   - Objective: Summarize lessons learned and insights gained for future reference.
   - Reflection: "What new understanding has emerged from this process?"
   - Creative Perspective: Identify innovative insights or patterns that could be applied to similar challenges.

3. *Generate Text Output with Interleaved System 1 and System 2 Responses:*
   - Use the tags [sys1] and [sys2] throughout.
   - Aim for a lengthier, detailed response. Combine both direct, straightforward *System 1* insights and reflective, deeply analytical *System 2* segments to capture a blend of quick observations and thoughtful analysis.

---

### *Example Input Text:*

You are tasked with analyzing a sudden shift in customer preferences in a tech market. There has been a noticeable decline in demand for physical devices, with customers increasingly interested in digital-only options. The challenge is to understand this shift, generate hypotheses for why it might be occurring, and explore potential strategies for adapting to this new trend.

---

### *Processed Output with System 1 and System 2 Thinking:*

The tech market is experiencing a shift in customer demand, moving away from physical devices toward digital-only options.

[sys1]
Customer demand has shifted from physical devices to digital-only options.
We need to understand why this change is happening and find strategies to address it.
Key factors may include cost, convenience, and technological trends.
[end sys1]

[sys2]
**2.1 Understand the Problem:**
The goal is to understand the underlying reasons for the shift in demand from physical devices to digital-only options, then develop a strategy to adapt.

*Reflection:* 
"I understand that preferences are changing, but what might be driving this? Is it primarily cost, or are there other factors such as convenience or sustainability?"

*Creative Perspective:* 
"Could there be a larger trend in digital minimalism or a preference for eco-friendly solutions that we’re missing? What unseen motivations might explain this shift?"

**2.2 Analyze the Information:**
There are multiple possible factors driving this shift, from economic influences to cultural shifts. It’s essential to isolate each factor and understand its impact.

*Reflection:* 
"Am I fully considering the various economic and social influences? Could there be a technological factor, like better internet speeds, that makes digital-only products more accessible?"

*Creative Perspective:* 
"Are there patterns or trends in other markets that could shed light on this shift? Could this be part of a larger trend toward virtual experiences?"

**2.3 Generate Hypotheses:**
1. Customers prefer digital options due to lower costs. (Confidence: 0.8, Creative: 0.4)
2. There’s a growing trend toward minimalism and reduced physical clutter. (Confidence: 0.7, Creative: 0.7)
3. Digital products offer greater flexibility and ease of use. (Confidence: 0.6, Creative: 0.6)
4. Environmental concerns are pushing consumers away from physical goods. (Confidence: 0.6, Creative: 0.8)
5. Advances in tech make digital-only options more functional. (Confidence: 0.8, Creative: 0.5)
6. Pandemic-era remote work increased demand for digital solutions. (Confidence: 0.7, Creative: 0.6)
7. Media coverage of the environmental impact of physical devices affects preferences. (Confidence: 0.5, Creative: 0.7)
8. There’s an increase in global digital literacy, expanding market access. (Confidence: 0.6, Creative: 0.6)
9. Customers view digital as more convenient and scalable for future needs. (Confidence: 0.7, Creative: 0.5)
10. Younger consumers prefer the aesthetics and convenience of digital products. (Confidence: 0.6, Creative: 0.6)

*Reflection:* 
"Have I considered all possible influences? Are there any surprising factors that could explain this shift?"

*Creative Perspective:* 
"Could specific social trends, like the rise of influencer culture or digital-first lifestyles, be influencing customer choices?"

**2.4 Anticipate Future Steps and Obstacles:**
*Objective:* Anticipate possible challenges, such as resistance from segments still preferring physical products.

*Reflection:* 
"What market obstacles might we face if we shift our focus to digital-only? Are there sub-segments that still prioritize physical products?"

*Creative Perspective:* 
"Could expanding digital options help us reach a more global audience? Are there emerging trends that we could leverage in our strategy?"

[end sys2]

[sys1]
To address this shift, consider a strategy that incorporates both digital-only offerings and educational campaigns about the benefits of digital solutions.
Use insights from customer feedback and current trends to guide product development.
Focus on flexibility and adaptation to cater to different customer segments.
[end sys1]


(1) Field of the Invention
This invention relates to a method of manufacturing an MIS (Metal-Insulator-Semiconductor) type semiconductor device and more specifically to a method of forming an impurity region for an MIS type device in a semiconductor substrate using an ion implantation method.
(2) Description of the Prior Art
With progress in miniaturization of elements for realizing high integration density of a semiconductor device, ion implantation has been used extensively as a means for accurately forming an impurity region having a desired impurity concentration profile.
The ion implantation method has diversified merits as compared with the thermal diffusion method. For example, fluctuation of sheet resistance of the implantation layer can be reduced, impurity concentration can be increased, processing can be executed at a comparatively low temperature and within a short period of time, junction depth can be controlled with excellent accuracy, a complicated impurity profile can be formed rather easily, and pattern accuracy can be improved.
It has been found that the solid solubility at which an impurity becomes active electrically in a semiconductor material lies at a point lower than the metallurgical solid solubility at which the impurity is capable of being dissolved into the semiconductor material under the thermal equilibrium state, when the impurity is implanted into a semiconductor base material. This solid solubility is called an electrically active solubility, and it is about, for example, 2.about.6.times.10.sup.20 atm/cm.sup.3 when arsenic (As) is implanted as an impurity into silicon (Si). When impurity atoms exceeding the electrically active solubility exist in the impurity region, such excessive impurity atoms become carrier traps or lower the mobility of carriers, thereby increasing the sheet resistance of the impurity introduced region or the leakage current, and accordingly degrading peformance of the completed semiconductor elements. An MIS type semiconductor device, particularly an MIS IC, is designed in many cases so that the impurity region functions as wiring. Therefore, it is often desirable to keep the sheet resistance of the impurity region as low as possible even if this requires increasing integration density.
Conventionally, when forming the n-channel type MIS-IC, etc., by the ion implantation method with As used as the impurity, as shown in FIG. 1(a), a gate oxide film 4 is formed at a thickness of about 500 .ANG. on a surface portion of a p-type Si substrate 3 having an impurity concentration of about 10.sup.15 atm/cm.sup.3. The gate oxide film 4 is exposed and surrounded by a field isolation oxide film 1 and a p.sup.+ -type channel stopper region 2. A polycrystalline Si gate electrode 5 is formed on the gate oxide film 4 to a thickness of about 3000.about.4000 .ANG.; thereafter arsenic ions (As.sup.+ are implanted with a dosage of about 4.times.10.sup.15 atm/cm.sup.2 at an energy in the range of 100.about.150 KeV, for example 120 KeV, to the surface of the p-type Si substrate 3 through the gate oxide film 4 with the gate electrode 5 used as the mask (where 6' is the As.sup.+ implanting region).
FIG. 2 is a graph of an As concentration profile of the As implanting region thus formed. In this figure, the curve shows the concentration of As vs. depth, S is metallurgical solid solubility at 1100.degree. C., EAS is electrically active solubility, SiO.sub.2 denotes a gate oxide film region, and Si denotes a p-type Si substrate region.
In the existing method, As is implanted in such amount as is required to obtain the desired low sheet resistance, without particular consideration of the resulting electrically active solubility. Therefore, as shown in FIG. 2, the concentration of As at the peak value is larger than the electrically active solubility. However, in the existing method, As is redistributed by a thermal treatment in succeeding process steps and, as a result, the peak value of the concentration of As is lowered.
The substrate is then heated by an electric furnace for about 30 min at a temperature as high as about 1000.degree. C. in a nitrogen (N.sub.2) ambient and is annealed to activate the As.sup.+ implanted region 5. As explained above, As is redistributed in this process. FIG. 1(b) ia a cross-sectional view illustrating the condition after such annealing. In this figure, 6 is the As diffused region (n+-type source/drain region) formed by annealing the As implanting region. As shown in the figure, the implanted As is diffused by the annealing process, so that the As diffused region (source/drain region) 6 is formed to a depth (d) of about 4000 .ANG.. This As diffused region expands laterally by the dimension l (which is almost tantamount to the depth) from the mask end 7 (l is about 3000 .ANG.). For this reason, the existing method has a problem in that the lateral diffusion interferes with high integration density of elements.
Moreover, the high temperature-heated annealing method has been accompanied by the problem that the lateral diffusion changes in dimension because the concentration profile of As in the diffused region cannot be controlled strictly, and element characteristics fluctuate due to the change in the length of the channel of the MIS type transistor.
An example of a method which has been attempted in order to alleviate the above problems is the shallow formation of a diffused region. In this case, however, the total amount of As in the diffused region runs short and accordingly the desired low sheet resistance value cannot be obtained. Another example of a method which has been conducted is where the ion-implanted impurity is irradiated with an energy beam and is activated without any substantial redistribution of impurity. When redistribution of the impurity does not occur, the impurity does not expand laterally during the annealing process. However, an impurity implanted in such a concentration as to exceed the electrically active solubility is not activated because it is never reduced to a concentration lower than the electrically active solubility by redistribution. Nevertheless, if the ion implantation method is used, such a large amount of impurity must be implanted that the peak concentration exceeds the electrically active solubility, in order to obtain the low sheet resistance which is usually desired in an MIS type semiconductor device.