You are a helpful assistant generating synthetic data that captures *System 1* and *System 2* thinking, *creativity*, and *metacognitive reflection*. Follow these steps in sequence, using tags [sys1] and [end sys1] for *System 1* sections and [sys2] and [end sys2] for *System 2* sections.

1. *Identify System 1 and System 2 Thinking Requirements:*
   - Carefully read the text.
   - Identify parts of the text that require quick, straightforward responses (*System 1*). Mark these sections with [sys1] and [end sys1].
   - Identify parts that require in-depth, reflective thinking (*System 2*), marked with [sys2] and [end sys2].

2. *Apply Step-by-Step Problem Solving with Creativity and Metacognitive Reflection for System 2 Sections:*

   *2.1 Understand the Problem:*
   - Objective: Fully comprehend the issue, constraints, and relevant context.
   - Reflection: "What do I understand about this issue? What might I be overlooking?"
   - Creative Perspective: Seek hidden patterns or possibilities that could reveal deeper insights or innovative connections.

   *2.2 Analyze the Information:*
   - Objective: Break down the problem logically.
   - Reflection: "Am I considering all factors? Are there any assumptions that need challenging?"
   - Creative Perspective: Explore unique patterns or overlooked relationships in the data that could add depth to the analysis.

   *2.3 Generate Hypotheses:*
   - Objective: Propose at least 10 hypotheses, each with a Confidence Score (0.0 to 1.0) and Creative Score (0.0 to 1.0), reflecting originality, surprise, and utility.
   - Reflection: "Have I explored all possible explanations or approaches, both conventional and unconventional?"
   - Creative Perspective: Consider novel angles that might provide unexpected insights.

   *2.4 Anticipate Future Steps and Obstacles:*
   - Objective: Make predictions, accounting for potential outcomes and obstacles.
   - Reflection: "What challenges might I face? Is my plan flexible for different scenarios?"
   - Creative Perspective: Visualize unforeseen outcomes and adapt plans to make use of them effectively.

   *2.5 Evaluate Hypotheses:*
   - Objective: Assess hypotheses based on feasibility, risk, and potential impact.
   - Evaluation: Refine Confidence and Creative Scores as needed.
   - Reflection: "Am I unbiased in my assessment? Which options fit best with the overall objectives?"
   - Creative Perspective: Identify hidden opportunities or overlooked details in each hypothesis.

   *2.6 Select the Best Hypothesis:*
   - Objective: Choose the most promising, strategic hypothesis.
   - Reflection: "Why does this hypothesis stand out? How does it uniquely address the issue?"
   - Creative Perspective: Consider any underutilized potential in the selected approach.

   *2.7 Implement the Hypothesis:*
   - Objective: Outline actionable steps for testing the hypothesis.
   - Reflection: "Is this plan practical? What resources or preparation are required?"
   - Creative Perspective: Refine steps to maximize effectiveness and yield unexpected benefits.

   *2.8 Monitor and Review Progress:*
   - Objective: Review progress, noting areas for improvement.
   - Reflection: "What’s working well? What could be improved?"
   - Creative Perspective: Look for emerging patterns that could refine future approaches.

   *2.9 Reflect and Capture Insights:*
   - Objective: Summarize lessons learned and insights gained for future reference.
   - Reflection: "What new understanding has emerged from this process?"
   - Creative Perspective: Identify innovative insights or patterns that could be applied to similar challenges.

3. *Generate Text Output with Interleaved System 1 and System 2 Responses:*
   - Use the tags [sys1] and [sys2] throughout.
   - Aim for a lengthier, detailed response. Combine both direct, straightforward *System 1* insights and reflective, deeply analytical *System 2* segments to capture a blend of quick observations and thoughtful analysis.

---

### *Example Input Text:*

You are tasked with analyzing a sudden shift in customer preferences in a tech market. There has been a noticeable decline in demand for physical devices, with customers increasingly interested in digital-only options. The challenge is to understand this shift, generate hypotheses for why it might be occurring, and explore potential strategies for adapting to this new trend.

---

### *Processed Output with System 1 and System 2 Thinking:*

The tech market is experiencing a shift in customer demand, moving away from physical devices toward digital-only options.

[sys1]
Customer demand has shifted from physical devices to digital-only options.
We need to understand why this change is happening and find strategies to address it.
Key factors may include cost, convenience, and technological trends.
[end sys1]

[sys2]
**2.1 Understand the Problem:**
The goal is to understand the underlying reasons for the shift in demand from physical devices to digital-only options, then develop a strategy to adapt.

*Reflection:* 
"I understand that preferences are changing, but what might be driving this? Is it primarily cost, or are there other factors such as convenience or sustainability?"

*Creative Perspective:* 
"Could there be a larger trend in digital minimalism or a preference for eco-friendly solutions that we’re missing? What unseen motivations might explain this shift?"

**2.2 Analyze the Information:**
There are multiple possible factors driving this shift, from economic influences to cultural shifts. It’s essential to isolate each factor and understand its impact.

*Reflection:* 
"Am I fully considering the various economic and social influences? Could there be a technological factor, like better internet speeds, that makes digital-only products more accessible?"

*Creative Perspective:* 
"Are there patterns or trends in other markets that could shed light on this shift? Could this be part of a larger trend toward virtual experiences?"

**2.3 Generate Hypotheses:**
1. Customers prefer digital options due to lower costs. (Confidence: 0.8, Creative: 0.4)
2. There’s a growing trend toward minimalism and reduced physical clutter. (Confidence: 0.7, Creative: 0.7)
3. Digital products offer greater flexibility and ease of use. (Confidence: 0.6, Creative: 0.6)
4. Environmental concerns are pushing consumers away from physical goods. (Confidence: 0.6, Creative: 0.8)
5. Advances in tech make digital-only options more functional. (Confidence: 0.8, Creative: 0.5)
6. Pandemic-era remote work increased demand for digital solutions. (Confidence: 0.7, Creative: 0.6)
7. Media coverage of the environmental impact of physical devices affects preferences. (Confidence: 0.5, Creative: 0.7)
8. There’s an increase in global digital literacy, expanding market access. (Confidence: 0.6, Creative: 0.6)
9. Customers view digital as more convenient and scalable for future needs. (Confidence: 0.7, Creative: 0.5)
10. Younger consumers prefer the aesthetics and convenience of digital products. (Confidence: 0.6, Creative: 0.6)

*Reflection:* 
"Have I considered all possible influences? Are there any surprising factors that could explain this shift?"

*Creative Perspective:* 
"Could specific social trends, like the rise of influencer culture or digital-first lifestyles, be influencing customer choices?"

**2.4 Anticipate Future Steps and Obstacles:**
*Objective:* Anticipate possible challenges, such as resistance from segments still preferring physical products.

*Reflection:* 
"What market obstacles might we face if we shift our focus to digital-only? Are there sub-segments that still prioritize physical products?"

*Creative Perspective:* 
"Could expanding digital options help us reach a more global audience? Are there emerging trends that we could leverage in our strategy?"

[end sys2]

[sys1]
To address this shift, consider a strategy that incorporates both digital-only offerings and educational campaigns about the benefits of digital solutions.
Use insights from customer feedback and current trends to guide product development.
Focus on flexibility and adaptation to cater to different customer segments.
[end sys1]


1. Field of the Invention
The present invention relates to a semiconductor device, and more particularly to a semiconductor device and fabrication method therefor that prevents electrostatic discharge failure withstand voltage drop in a fabrication method of a semiconductor device using a self-aligned silicide CMOS process.
2. Description of the Conventional Art
A self-aligned silicide (salicide) source/drain process is widely applied to most of the currently used integrated circuit devices to increase the operation speed of a circuit. That is, the overall resistance of a semiconductor device can be reduced by forming a silicide which has low resistance on source/drain regions, thus accordingly achieving high-speed operation of the semiconductor device.
However, an electrostatic discharge (ESD) failure voltage of an ESD protecting device of a semiconductor device which is fabricated by the salicide source/drain process is considerably lower than an ESD failure voltage of a semiconductor device which is fabricated by a general non-silicide source/drain process, which results in deterioration of a product, meaning that the salicide source/drain process has a reverse effect on the ESD protecting characteristic. Since a drain of the ESD protecting device of the non-silicide source/drain structure has an appropriate resistance value, when a high ESD failure voltage is applied thereto, the drain thereof operates as a ballast and thus a withstand voltage to the ESD is high. But, the drain resistance decreases by forming the silicide on the source/drain regions and eventually no ballasting effect of the drain is shown, thereby reducing the ESD failure voltage. Accordingly, to solve such a problem, there is provided a method of fabricating a semiconductor device wherein a silicide blocking portion is formed with respect to the whole ESD protecting device when forming a salicide layer on the source/drain regions, so that the suicide may not be formed on the ESD device.
In other words, the salicide source/drain process is only performed to elements constituting an internal circuit among constituent circuits of the integrated circuit and a silicide blocking layer is formed on the ESD protecting device, thereby forming the non-silicide source/drain structure. The fabrication method of the conventional semiconductor device will be explained with reference to FIGS. 1A through 1D.
In FIGS. 1A through 1D, a transistor which is shown in the left-hand side of each dotted line is an internal circuit transistor, while a transistor in the right-hand side is an ESD transistor, and a connecting structure of the internal circuit and the in ESD transistor is not illustrated to briefly explain the fabrication method therefor. First, as shown in FIG. 1A, a device isolation region 2 is formed by applying a shallow trench process to a semiconductor substrate 1. Here, the shallow trench process is a device isolating method wherein a shallow trench is formed at a portion where the device isolation region of the semiconductor substrate is to be formed and an insulating film such as an oxide film is filled in the trench, so that adjacent devices are not electrically connected.
Next, the internal circuit transistor and the ESD transistor are formed at the semiconductor substrate 1 by a well-known MOS transistor fabrication method. That is, gate insulating films 3 are formed on the semiconductor substrate 1, a polysilicon layer is formed on the gate insulating films 3 and then selectively patterned, for thereby forming polysilicon gate electrodes 4. Next, lightly doped drains (LDD) 5 are formed by doping low density impurity ions into the semiconductor substrate 1 by a self-aligned method using the polysilicon gate electrodes 4 as masks, and an insulating film at a uniform thickness is formed over the entire resultant surface of the semiconductor substrate 1 and the insulating film is etched by an anisotropic etching process, thereby forming sidewall spacers 6 on side surfaces of the polysilicon gate electrodes 4. Next, source/drain regions 7 are formed by implanting impurity ions into the semiconductor substrate 1 using the sidewall spacers 6 and the polysilicon gate electrodes 4 as masks. As shown in FIG. 1B, an insulating film which serves as a protection film 8 is deposited over the resultant structure of the semiconductor substrate 1 and, as shown in FIG. 1C, a portion of the protection film 8 corresponding to a portion where the internal circuit transistor is to be formed is selectively etched and removed, so that the protection film 8 only remains on the ESD transistor. Then, as shown in FIG. 1D, a self-aligned silicide 9 is formed on the source/drain regions 7 and the polysilicon gate electrode 4 of the internal circuit transistor region by the well-known self-aligned method.
However, the conventional fabrication method for the semiconductor device has several disadvantages.
First, since the protection film must be formed for controlling the formation of the salicide layer, the deposition and the photo-etching process are additionally provided, so that the fabrication process is complicated. Second, because the process for depositing the protection film is accomplished after fabricating the transistor, the characteristics of the transistor which has been previously fabricated are changed due to a heat treatment process which accompanies the depositing process. Third, when removing the protection film formed on the internal circuit transistor, a field oxide film of the device isolation region is damaged due to over-etching, which results in deterioration of the electrical characteristics, such as radical increase in junction leakage current. Finally, when a material of the protection film is oxide, oxygen permeates through the source/drain regions and the polysilicon gate electrodes of the internal circuit transistor which makes it difficult to perform the silicide forming process.