You are a helpful assistant generating synthetic data that captures *System 1* and *System 2* thinking, *creativity*, and *metacognitive reflection*. Follow these steps in sequence, using tags [sys1] and [end sys1] for *System 1* sections and [sys2] and [end sys2] for *System 2* sections.

1. *Identify System 1 and System 2 Thinking Requirements:*
   - Carefully read the text.
   - Identify parts of the text that require quick, straightforward responses (*System 1*). Mark these sections with [sys1] and [end sys1].
   - Identify parts that require in-depth, reflective thinking (*System 2*), marked with [sys2] and [end sys2].

2. *Apply Step-by-Step Problem Solving with Creativity and Metacognitive Reflection for System 2 Sections:*

   *2.1 Understand the Problem:*
   - Objective: Fully comprehend the issue, constraints, and relevant context.
   - Reflection: "What do I understand about this issue? What might I be overlooking?"
   - Creative Perspective: Seek hidden patterns or possibilities that could reveal deeper insights or innovative connections.

   *2.2 Analyze the Information:*
   - Objective: Break down the problem logically.
   - Reflection: "Am I considering all factors? Are there any assumptions that need challenging?"
   - Creative Perspective: Explore unique patterns or overlooked relationships in the data that could add depth to the analysis.

   *2.3 Generate Hypotheses:*
   - Objective: Propose at least 10 hypotheses, each with a Confidence Score (0.0 to 1.0) and Creative Score (0.0 to 1.0), reflecting originality, surprise, and utility.
   - Reflection: "Have I explored all possible explanations or approaches, both conventional and unconventional?"
   - Creative Perspective: Consider novel angles that might provide unexpected insights.

   *2.4 Anticipate Future Steps and Obstacles:*
   - Objective: Make predictions, accounting for potential outcomes and obstacles.
   - Reflection: "What challenges might I face? Is my plan flexible for different scenarios?"
   - Creative Perspective: Visualize unforeseen outcomes and adapt plans to make use of them effectively.

   *2.5 Evaluate Hypotheses:*
   - Objective: Assess hypotheses based on feasibility, risk, and potential impact.
   - Evaluation: Refine Confidence and Creative Scores as needed.
   - Reflection: "Am I unbiased in my assessment? Which options fit best with the overall objectives?"
   - Creative Perspective: Identify hidden opportunities or overlooked details in each hypothesis.

   *2.6 Select the Best Hypothesis:*
   - Objective: Choose the most promising, strategic hypothesis.
   - Reflection: "Why does this hypothesis stand out? How does it uniquely address the issue?"
   - Creative Perspective: Consider any underutilized potential in the selected approach.

   *2.7 Implement the Hypothesis:*
   - Objective: Outline actionable steps for testing the hypothesis.
   - Reflection: "Is this plan practical? What resources or preparation are required?"
   - Creative Perspective: Refine steps to maximize effectiveness and yield unexpected benefits.

   *2.8 Monitor and Review Progress:*
   - Objective: Review progress, noting areas for improvement.
   - Reflection: "What’s working well? What could be improved?"
   - Creative Perspective: Look for emerging patterns that could refine future approaches.

   *2.9 Reflect and Capture Insights:*
   - Objective: Summarize lessons learned and insights gained for future reference.
   - Reflection: "What new understanding has emerged from this process?"
   - Creative Perspective: Identify innovative insights or patterns that could be applied to similar challenges.

3. *Generate Text Output with Interleaved System 1 and System 2 Responses:*
   - Use the tags [sys1] and [sys2] throughout.
   - Aim for a lengthier, detailed response. Combine both direct, straightforward *System 1* insights and reflective, deeply analytical *System 2* segments to capture a blend of quick observations and thoughtful analysis.

---

### *Example Input Text:*

You are tasked with analyzing a sudden shift in customer preferences in a tech market. There has been a noticeable decline in demand for physical devices, with customers increasingly interested in digital-only options. The challenge is to understand this shift, generate hypotheses for why it might be occurring, and explore potential strategies for adapting to this new trend.

---

### *Processed Output with System 1 and System 2 Thinking:*

The tech market is experiencing a shift in customer demand, moving away from physical devices toward digital-only options.

[sys1]
Customer demand has shifted from physical devices to digital-only options.
We need to understand why this change is happening and find strategies to address it.
Key factors may include cost, convenience, and technological trends.
[end sys1]

[sys2]
**2.1 Understand the Problem:**
The goal is to understand the underlying reasons for the shift in demand from physical devices to digital-only options, then develop a strategy to adapt.

*Reflection:* 
"I understand that preferences are changing, but what might be driving this? Is it primarily cost, or are there other factors such as convenience or sustainability?"

*Creative Perspective:* 
"Could there be a larger trend in digital minimalism or a preference for eco-friendly solutions that we’re missing? What unseen motivations might explain this shift?"

**2.2 Analyze the Information:**
There are multiple possible factors driving this shift, from economic influences to cultural shifts. It’s essential to isolate each factor and understand its impact.

*Reflection:* 
"Am I fully considering the various economic and social influences? Could there be a technological factor, like better internet speeds, that makes digital-only products more accessible?"

*Creative Perspective:* 
"Are there patterns or trends in other markets that could shed light on this shift? Could this be part of a larger trend toward virtual experiences?"

**2.3 Generate Hypotheses:**
1. Customers prefer digital options due to lower costs. (Confidence: 0.8, Creative: 0.4)
2. There’s a growing trend toward minimalism and reduced physical clutter. (Confidence: 0.7, Creative: 0.7)
3. Digital products offer greater flexibility and ease of use. (Confidence: 0.6, Creative: 0.6)
4. Environmental concerns are pushing consumers away from physical goods. (Confidence: 0.6, Creative: 0.8)
5. Advances in tech make digital-only options more functional. (Confidence: 0.8, Creative: 0.5)
6. Pandemic-era remote work increased demand for digital solutions. (Confidence: 0.7, Creative: 0.6)
7. Media coverage of the environmental impact of physical devices affects preferences. (Confidence: 0.5, Creative: 0.7)
8. There’s an increase in global digital literacy, expanding market access. (Confidence: 0.6, Creative: 0.6)
9. Customers view digital as more convenient and scalable for future needs. (Confidence: 0.7, Creative: 0.5)
10. Younger consumers prefer the aesthetics and convenience of digital products. (Confidence: 0.6, Creative: 0.6)

*Reflection:* 
"Have I considered all possible influences? Are there any surprising factors that could explain this shift?"

*Creative Perspective:* 
"Could specific social trends, like the rise of influencer culture or digital-first lifestyles, be influencing customer choices?"

**2.4 Anticipate Future Steps and Obstacles:**
*Objective:* Anticipate possible challenges, such as resistance from segments still preferring physical products.

*Reflection:* 
"What market obstacles might we face if we shift our focus to digital-only? Are there sub-segments that still prioritize physical products?"

*Creative Perspective:* 
"Could expanding digital options help us reach a more global audience? Are there emerging trends that we could leverage in our strategy?"

[end sys2]

[sys1]
To address this shift, consider a strategy that incorporates both digital-only offerings and educational campaigns about the benefits of digital solutions.
Use insights from customer feedback and current trends to guide product development.
Focus on flexibility and adaptation to cater to different customer segments.
[end sys1]


1. Field of the Invention
The present invention relates generally to a method of semiconductor device isolation, and more particularly to a method of semiconductor device isolation, which can minimize design rule of an active region between trenches formed at an isolation region of a semiconductor device.
2. Description of the Prior Art
Semiconductor devices formed on a silicon wafer include a device isolation region serving to electrically isolate circuit patterns from each other. The formation of the device isolation region is an initial process in all fabrication processes, and has an influence upon the size of active regions and upon the process margin in subsequent processes. Thus, as semiconductor devices become more highly integrated and sized down, actively conducted studies to reduce a size of the respective devices and also to reduce the device isolation region are being conducted.
Generally, the LOCOS method, widely used in fabrication of semiconductor devices, is advantageous in that it utilizes a simple process. In a highly integrated semiconductor device of the 256 Megabit DRAM level or above, however, the LOCOS method has limitations due to punch-through by the bird""s beak that results from a reduction in width of the device isolation region, as well as a reduction in the thickness of the device isolation film.
For this reason, a device isolation method using trenches, such as the Shallow Trench Isolation (STI) process, were proposed as a technology suitable for device isolation in highly integrated semiconductor devices.
FIGS. 1A to 1D illustrate in cross-sectional views the method steps showing a method of semiconductor device isolation according to the prior art.
As shown in FIG. 1A, the method of semiconductor device isolation includes applying a photoresist film on a semiconductor substrate 100 where a device isolation region (not shown) was previously defined. The photoresist film is then exposed to light and developed, thereby forming a photoresist pattern (PR) 102 through which the device isolation region is exposed.
In FIG. 1A, al represents the minimum design rule of active region between trenches 104 that is capable of being defined using the existing photo equipment, and has a dimension far greater than 0.1 xcexcm.
Thereafter, the substrate 100 is etched according to the STI process using the photoresist pattern (PR) 102 as a mask, thereby forming trenches 104.
Then, the photoresist pattern is removed. As shown in FIG. 1B, the entire surface of the substrate 100 where the trenches 104 were formed is subjected to a thermal oxidation process to form a first oxide film 106 on the surface of the substrate and along the inner wall of the trenches 104. The formation of the first oxide film 106 is carried out for recovery of any substrate silicon components that may have been damaged by the STI dry etching process during formation of the trenches 104.
Thereafter, the first oxide film is removed, as shown in FIG. 1C. The reference numeral 110 denotes the final shape of the trenches resulting after removal of the first oxide film, in distinction from the reference numeral 104.
Subsequently, as shown in FIG. 1D, a second oxide film 112 is formed by depositing an insulating film, such as a silicon oxide film or the like, on the resulting substrate, using a Chemical Vapor Deposition (CVD) process. The second oxide film is etched using a Chemical Mechanical Polishing (CMP) process or etch back process, so that a device isolation film is formed which is filled in the respective final trenches 110 with the second oxide film 112.
FIG. 2 is a cross-sectional view showing drawbacks occurring by utilizing the method of the prior art shown above. In the method according to the prior art, shown in FIGS. 1A-1D, as the STI dry etching process for formation of the trenches is carried out, defects are caused at portions of the silicon substrate where the trenches were formed. If the substrate is subjected to a thermal oxidation process in a state where the defects are not removed, the oxidation rate at the bottom portion of the trenches is then significantly different from the oxidation rate at the sidewall portion thereof. In other words, the sidewall portion of the trench is far higher than the bottom portion in oxidation rate. For this reason, the linewidth between device isolation films will have a dimension far greater than 0.1 xcexcm.
In addition, if the substrate including the trenches having the different oxidation rate is subjected to an ion implantation process, there is a problem in that the trenches act as a trap site of impurities.
Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a method of semiconductor device isolation, which can finely define the design rule of active region between trenches to have a dimension less than 0.1 xcexcm by maintaining the oxidation rate of the bottom portion of the trenches at the same level as that of the sidewall portion thereof.
To accomplish this object, there is provided a method of semiconductor device isolation, which comprises the steps of providing a substrate where a device isolation region was defined; removing the device isolation region of the substrate using a photolithography process to form trenches; implanting ions into the substrate having the trenches to form an impurity layer having a uniform depth relative to the surface of the substrate; oxidizing the substrate having the impurity layer to form an oxide film; and removing the oxide film.