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1. Field of the Invention The present invention relates to an infrared absorbent for use in a thermal type infrared sensor, wherein the temperature of the temperature sensing part having a thermally insulated structure rises by the incidence of an infrared ray, and relates to a method for forming the absorbent. 2. Description of the Related Art Among the infrared sensors, those classified as thermal type have a mechanism that the temperature of the temperature sensing part comprising a thermally insulated structure rises by the incidence of an infrared ray, and the temperature rise is converted into an electric signal by utilizing the pyroelectric effect, the thermoelectric effect, or the temperature coefficient of a resistor. With such a thermal type infrared sensor, it is necessary for realizing an increased sensor sensitivity to increase the temperature rise of the temperature sensing part by effectively absorbing the incident infrared ray, converting it into heat, and transferring it to the temperature sensing part. For this purpose, an infrared absorbent is placed over the temperature sensing part, where the incident infrared ray is converted into heat. Generally, a vapor deposition film of a metal such as Au black or NiCr, or a printed film of a material such as a polymer with a high infrared absorption coefficient is used as this absorbent. Regarding the patterning of this infrared absorbent, the metal mask method, the lift-off method or the like is used. For example, infrared absorbents (blackbodies) described in Japanese Unexamined Utility Model Application Publication No. 3-117739 and Japanese Unexamined Utility Model Application Publication No. 4-59427 were obtained by patterning according to such a method. However, when deposition/patterning of an infrared absorbent is performed according to the above-described method, an absorbent pattern with a uniform film thickness results, and the following undesirable problem occurs: when an infrared absorbent formed with a metal having a good thermal conduction such as Au has a uniform film thickness, the heat transfer route through which heat flows into an external part (heat sink) from the central region and its neighborhood of the absorbent pattern via the edge region of the absorbent pattern has a large heat conductance, resulting in a large heat loss in this portion so that the temperature rise of the temperature sensing part becomes small. FIG. 3 shows the heat transfer route in this case. In this figure, the numerals 1, 2, and 3 represent a temperature sensing part, an infrared absorbent (blackbody), and a heat sink, respectively. Heat diffuses along route A from the central region and its neighborhood of the infrared absorbent 2. However, regarding the route A, the route passing through the infrared absorbent 2 has a good thermal conduction, with a result that the heat conductance of this portion becomes large, restricting temperature rise of the temperature sensing part 1. Accordingly, it is an object of the present invention to reduce the heat loss in order to realize an efficient temperature rise of the temperature sensing part, by devising the form of