please help me edite these sentences i want to they have been a Coherent semantic communication and i want to ediet this text for my paper i want to this text be native form. and it has minimum overlap with other papers and also change my write to best form . my text is: The manipulation of light using new techniques and materials has been a topic of great interest in the field of photonics. Among the various phenomena associated with light-matter interactions, the Goos-Hänchen shift (GHS) has garnered considerable attention due to its potential applications in optical devices, such as reflectors, sensors, optical diodes, polarizers, lasers, and filters[].The Goos-Hänchen shift, also known as the lateral shift, refers to the displacement of a light beam at the interface of two materials due to total internal reflection. This phenomenon manifests as a lateral displacement of the reflected beam relative to the incident beam, which can significantly impact the phase and intensity distribution of the reflected light. The Goos-Hänchen effect is not limited to total internal reflection, but also occurs in transmission and partial reflection[].This effect has been extensively studied for various structures such as photonic crystals, absorbing media, dielectric slabs, left-handed materials, metal surfaces, and NSCMs[].
The lateral shift can be positive or negative, and its magnitude is typically only a small fraction of the wavelength, making its detection challenging []. However, recent research has shown that under certain conditions, the lateral shift can be an order of magnitude larger than the wavelength[].It is important to find ways to increase the magnitude of lateral shifts. Great efforts have been made to increase the magnitude of lateral shifts, such as using surface plasmon polaritons and beam shaping, the Kerr nonlinearity, local electric field constraints, transmission optics, and dispersive materials [19,23-27]. Another method to increase lateral displacement is by embedding defects in layered structures.  For example, Wang et al. demonstrated that a one-dimensional photonic crystal (1DPC) with a defect layer can induce a large lateral shift in the reflected and transmitted beams near the defect mode. Chen et al. analyzed the Goos-Hänchen shifts for a photonic crystal with a nonlinear defect. Zhao et al. reported a giant lateral shift of the reflected beam in a defected photonic crystal containing a single-layer graphene layer. They also studied the lateral shifts of a beam passing through a defective photonic lattice and showed that the lateral shifts near the defect modes are extremely large.
There has been significant interest in the development of tunable lateral shifts in optics. By combining functional materials with optical structures, lateral shift control can be achieved and adjusted by changing external stimuli. For example, You et al. proposed a multilayer structure with parity and time-reversal symmetries (TP) that exhibited a large lateral shift, which could be adjusted by varying the incident frequency and the number of periods[]. Mehrabi et al. demonstrated a tunable Goos-Hänchen shift in a waveguide structure containing graphene, allowing for control of the lateral shift by adjusting the Fermi level of the graphene layer[].  another work, Madani et al. investigated the tunability of Goos-Hänchen shift in a photonic crystal containing graphene monolayers. They also reported the tunability of the Goos-Hänchen shift of the reflective beam by changing the chemical potential of graphene[].Yongqiang Kang et al. investigated the phenomenon of large tunable lateral shift in a prism coupling system containing a superconducting slab. By incorporating a superconducting material into the system, they demonstrated a significant enhancement of the lateral shift, which can be tuned by varying the temperature of the slab. This work provides a new means for achieving large tunable lateral shifts, which could have important applications in optical sensing, communication, and other fields[]. Another study proposed a tunable lateral shift device based on a defective photonic crystal with graphene, which exhibited a large and tunable lateral shift and could be used in highly sensitive sensors. Additionally, the authors investigated lateral displacement adjustment in a structural chiral nanocomposite lamb with an external electric field. They showed that this structure shows a large lateral shift near the edges of the photonic band gap, which can be controlled by applying an electric field[]. These studies demonstrate the potential for tunable lateral shifts in a variety of optical structures, suggesting exciting opportunities for applications in areas such as optical sensing, signal processing, and communication.
Chalcogenide phase change materials have attracted significant attention from the scientific community due to their unique properties. These materials can switch between different states with different optical and electrical properties by applying heat or electrical pulses. Chalcogenide phase change materials are used in data storage, memory devices, optical switching, and photonic computing. There are mainly three alloys from the chalcogenide phase change materials family: Ge2Sb2Te5, Sb2Se3, and Ge2Sb2Se4Te. Kandammathe et al. investigated the electrical tuning of Goos-Hänchen displacement in Ge2Sb2Te5 and Sb2Se3 phase change chalcogenide films using the prism coupling method. They found that the Goos-Hänchen displacement is larger in the amorphous state than in the crystalline state and changes sign at a certain critical angle. However, the effect of Ge2Sb2Se4Te alloy in the control of Goos-Hänchen displacement has not been investigated.Ge2Sb2Se4Te has a larger bandgap and can be transparent in both states, while Ge2Sb2Te5 has a smaller bandgap and is opaque in the crystalline state. This means that Ge2Sb2Se4Te can modulate light more effectively and efficiently than Ge2Sb2Te5, especially in the near-infrared region. Ge2Sb2Se4Te also has a higher refractive index contrast, lower switching energy, faster switching speed, and higher thermal stability than Ge2Sb2Te5. 
In this paper, we aim to investigate the effect of GSST on the tuning of Goos-Hänchen shift in a photonic crystal with a GSST defect layer. We will explore the theoretical background of the Goos-Hänchen effect, the properties of photonic crystals, and the characteristics of GSST phase change materials. We will then present the methodology for studying the Goos-Hänchen effect in the photonic crystal with the GSST material defect. Finally, we will analyze and discuss the results obtained and draw conclusions regarding the behavior of light in this system. By investigating the Goos-Hänchen effect in a photonic crystal with a GSST material defect, we hope to contribute to the understanding of light-matter interactions in complex optical systems. This research has the potential to pave the way for the development of advanced photonic devices with enhanced functionality and performance.