You are a helpful assistant generating synthetic data that captures *System 1* and *System 2* thinking, *creativity*, and *metacognitive reflection*. Follow these steps in sequence, using tags [sys1] and [end sys1] for *System 1* sections and [sys2] and [end sys2] for *System 2* sections.

1. *Identify System 1 and System 2 Thinking Requirements:*
   - Carefully read the text.
   - Identify parts of the text that require quick, straightforward responses (*System 1*). Mark these sections with [sys1] and [end sys1].
   - Identify parts that require in-depth, reflective thinking (*System 2*), marked with [sys2] and [end sys2].

2. *Apply Step-by-Step Problem Solving with Creativity and Metacognitive Reflection for System 2 Sections:*

   *2.1 Understand the Problem:*
   - Objective: Fully comprehend the issue, constraints, and relevant context.
   - Reflection: "What do I understand about this issue? What might I be overlooking?"
   - Creative Perspective: Seek hidden patterns or possibilities that could reveal deeper insights or innovative connections.

   *2.2 Analyze the Information:*
   - Objective: Break down the problem logically.
   - Reflection: "Am I considering all factors? Are there any assumptions that need challenging?"
   - Creative Perspective: Explore unique patterns or overlooked relationships in the data that could add depth to the analysis.

   *2.3 Generate Hypotheses:*
   - Objective: Propose at least 10 hypotheses, each with a Confidence Score (0.0 to 1.0) and Creative Score (0.0 to 1.0), reflecting originality, surprise, and utility.
   - Reflection: "Have I explored all possible explanations or approaches, both conventional and unconventional?"
   - Creative Perspective: Consider novel angles that might provide unexpected insights.

   *2.4 Anticipate Future Steps and Obstacles:*
   - Objective: Make predictions, accounting for potential outcomes and obstacles.
   - Reflection: "What challenges might I face? Is my plan flexible for different scenarios?"
   - Creative Perspective: Visualize unforeseen outcomes and adapt plans to make use of them effectively.

   *2.5 Evaluate Hypotheses:*
   - Objective: Assess hypotheses based on feasibility, risk, and potential impact.
   - Evaluation: Refine Confidence and Creative Scores as needed.
   - Reflection: "Am I unbiased in my assessment? Which options fit best with the overall objectives?"
   - Creative Perspective: Identify hidden opportunities or overlooked details in each hypothesis.

   *2.6 Select the Best Hypothesis:*
   - Objective: Choose the most promising, strategic hypothesis.
   - Reflection: "Why does this hypothesis stand out? How does it uniquely address the issue?"
   - Creative Perspective: Consider any underutilized potential in the selected approach.

   *2.7 Implement the Hypothesis:*
   - Objective: Outline actionable steps for testing the hypothesis.
   - Reflection: "Is this plan practical? What resources or preparation are required?"
   - Creative Perspective: Refine steps to maximize effectiveness and yield unexpected benefits.

   *2.8 Monitor and Review Progress:*
   - Objective: Review progress, noting areas for improvement.
   - Reflection: "What’s working well? What could be improved?"
   - Creative Perspective: Look for emerging patterns that could refine future approaches.

   *2.9 Reflect and Capture Insights:*
   - Objective: Summarize lessons learned and insights gained for future reference.
   - Reflection: "What new understanding has emerged from this process?"
   - Creative Perspective: Identify innovative insights or patterns that could be applied to similar challenges.

3. *Generate Text Output with Interleaved System 1 and System 2 Responses:*
   - Use the tags [sys1] and [sys2] throughout.
   - Aim for a lengthier, detailed response. Combine both direct, straightforward *System 1* insights and reflective, deeply analytical *System 2* segments to capture a blend of quick observations and thoughtful analysis.

---

### *Example Input Text:*

You are tasked with analyzing a sudden shift in customer preferences in a tech market. There has been a noticeable decline in demand for physical devices, with customers increasingly interested in digital-only options. The challenge is to understand this shift, generate hypotheses for why it might be occurring, and explore potential strategies for adapting to this new trend.

---

### *Processed Output with System 1 and System 2 Thinking:*

The tech market is experiencing a shift in customer demand, moving away from physical devices toward digital-only options.

[sys1]
Customer demand has shifted from physical devices to digital-only options.
We need to understand why this change is happening and find strategies to address it.
Key factors may include cost, convenience, and technological trends.
[end sys1]

[sys2]
**2.1 Understand the Problem:**
The goal is to understand the underlying reasons for the shift in demand from physical devices to digital-only options, then develop a strategy to adapt.

*Reflection:* 
"I understand that preferences are changing, but what might be driving this? Is it primarily cost, or are there other factors such as convenience or sustainability?"

*Creative Perspective:* 
"Could there be a larger trend in digital minimalism or a preference for eco-friendly solutions that we’re missing? What unseen motivations might explain this shift?"

**2.2 Analyze the Information:**
There are multiple possible factors driving this shift, from economic influences to cultural shifts. It’s essential to isolate each factor and understand its impact.

*Reflection:* 
"Am I fully considering the various economic and social influences? Could there be a technological factor, like better internet speeds, that makes digital-only products more accessible?"

*Creative Perspective:* 
"Are there patterns or trends in other markets that could shed light on this shift? Could this be part of a larger trend toward virtual experiences?"

**2.3 Generate Hypotheses:**
1. Customers prefer digital options due to lower costs. (Confidence: 0.8, Creative: 0.4)
2. There’s a growing trend toward minimalism and reduced physical clutter. (Confidence: 0.7, Creative: 0.7)
3. Digital products offer greater flexibility and ease of use. (Confidence: 0.6, Creative: 0.6)
4. Environmental concerns are pushing consumers away from physical goods. (Confidence: 0.6, Creative: 0.8)
5. Advances in tech make digital-only options more functional. (Confidence: 0.8, Creative: 0.5)
6. Pandemic-era remote work increased demand for digital solutions. (Confidence: 0.7, Creative: 0.6)
7. Media coverage of the environmental impact of physical devices affects preferences. (Confidence: 0.5, Creative: 0.7)
8. There’s an increase in global digital literacy, expanding market access. (Confidence: 0.6, Creative: 0.6)
9. Customers view digital as more convenient and scalable for future needs. (Confidence: 0.7, Creative: 0.5)
10. Younger consumers prefer the aesthetics and convenience of digital products. (Confidence: 0.6, Creative: 0.6)

*Reflection:* 
"Have I considered all possible influences? Are there any surprising factors that could explain this shift?"

*Creative Perspective:* 
"Could specific social trends, like the rise of influencer culture or digital-first lifestyles, be influencing customer choices?"

**2.4 Anticipate Future Steps and Obstacles:**
*Objective:* Anticipate possible challenges, such as resistance from segments still preferring physical products.

*Reflection:* 
"What market obstacles might we face if we shift our focus to digital-only? Are there sub-segments that still prioritize physical products?"

*Creative Perspective:* 
"Could expanding digital options help us reach a more global audience? Are there emerging trends that we could leverage in our strategy?"

[end sys2]

[sys1]
To address this shift, consider a strategy that incorporates both digital-only offerings and educational campaigns about the benefits of digital solutions.
Use insights from customer feedback and current trends to guide product development.
Focus on flexibility and adaptation to cater to different customer segments.
[end sys1]


1. Field of the Invention
This invention relates to a semiconductor device, and more specifically to a bipolar transistor.
2. Description of the Prior Art
Referring to FIG. 1, there is illustrated a sectional view of a prior art NPN bipolar transistor which includes a base formed through ion implantation and which employs a self-alignment process, the bipolar transistor including a p.sup.- type silicon substrate 201, an n.sup.+ type buried layer, an n.sup.- type silicon epitaxial layer 203 formed on the former layer 202, and a LOCOS oxide film 204. The n.sup.+ type buried layer 202 is connected to an A1 electrode 216 through an n.sup.+ type phosphorus diffusion layer 205 and an n.sup.+ type collector electrode polycrystalline silicon 208. A p.sup.+ type intrinsic base 217 formed through ion implantation on the surface of the n.sup.- type silicon epitaxial layer 203 is connected with the side surface of a p.sup.+ type external base 218 formed on the surface of the n.sup.- type silicon epitaxial layer 203 through impurity diffusion from a p.sup.+ type base electrode polycrystalline silicon 207. Further, an n.sup.+ type emitter 220 is formed on the surface of the intrinsic base 217 through impurity diffusion from n.sup.+ type emitter electrode polycrystalline silicon 219. Silicon oxide films 206, 214, and a silicon nitride film 209 electrically insulates the respective portions mentioned above. The above construction is basically the same as an SST (Super Self-Aligned Process Technology) one reported in the Proceedings of the 12th Solid State Devices Conference: Proc. of Solid State Device, P155, 1980.
The aforementioned prior art bipolar transistor is configured into a structure suitable for the formation of a base through an ion implantation process. Such an ion implantation process however suffers from a difficulty with channeling, and hence has in itself a limitation to a technique where a base is formed as a thin film. Further, as implantation conditions go to lower implantation energy and to higher doses for the purpose of a base making thinner, a heat teatment at a temperature lower than a predetermined one and within a predetermined period of time makes impossible the recovery of implantation damage and the activation of impurities.
Additionally, the foregoing bipolar transistor has another difficulty caused by its fabrication method. More specifically, the formation of a base of the foregoing bipolar transistor includes the following processes. A base electrode polycrystalline silicon is patterned, on the side wall of which is polycrystalline silicon an insulating film is formed, and an insulating film provided under which polycrystalline film is side-etched, and thereafter a non-implanted polycrystalline silicon is deposited by an LPCVD process, into which non-implanted polycrystalline silicon impurity is in turn diffused from an overhung portion of the foregoing base electrode polycrystalline silicon through a heat treatment. The non-implanted polycrystalline silicon is kept non-implanted as before excepting the lower part of the overhung portion. When the additional part of the polycrystalline silicon kept non-implanted is wet-etched by hydrazine and KOH, etc., and use is made of a (100)-oriented single crystal silicon substrate, etching rates of the single crystal silicon and the non-implanted polycrystalline silicon being wet-etched, the etching is advancd up to the (100)-oriented intrinsic base. This impedes in the prior art bipolar transistor the use of the (100)-oriented single crystal silicon substrate.
In contrast, there is disclosed a bipolar transistor with use of a low temperature epitaxial technique promising as the thin film base formation technique in the proceedings of the VLSI Technology Symposium (Symp. on VLSI Technology, pp. 91-92, 1989). More specifically, a base electrode polycrystalline silicon is patterned on a collector, and thereafter an epitaxial layer is grown to form a single crystal on a region where the aforementioned base electrode polycrystalline silicon is absent Since in this structure the emitter and the base fail to be formed in a self-alignment manner, an emitter opening part is needed to be formed on the single crystal base through lithography. This essentially results in a limitation to reduction of the device and makes it impossible to really produce parasitic capacitance and parasitic resistance. It is therefore impossible to realize a high speed bipolar transistor using the above structure.
There is further disclosed a technique to suppress Kirk effect by implanting phosphorus ion into a collector disposed just under an emitter for the purpose of achieving a high f.sub.T in the proceedings of the 19th Solid State Device and Materials Conference (Proceedings of Solid State Devices and Materials, pp.331-334, 1987). The technique surely enjoys a higher cut-off frequency f.sub.T, but causes the severe deterioration of junction breakdown voltage because the junction is formed between a high concentration base and a high concentration collector. For improving such breakdown voltage a p-i-n structure may be constructed to prevent a direct junction from being formed between the high concentration base and the high concentration collector by disposing an i layer between those base and collector. Upon constructing such a structure through an ion implantation process a uniform concentration thicker i layer fails to be formed because of the affection of the tail of an impurity Gaussian distribution yielded upon ion implantation. For improving the breakdown voltage by moderating an electric field in a depletion layer between the collector and the base, an i layer with the width of the same order (i.e., about 100 nm) as that of the depletion layer, which is impossible in view of the aforementioned reason.