标题：袁彩雷
简介
袁彩雷，男，生于新疆，2000年获得中国科学院固体物理研究所硕士学位，2004年获得新加坡国立大学博士学位，并在2004年至2007年在新加坡国立大学和新加坡南洋理工大学从事博士后研究工作。专长于纳米材料，结构及器件的量子物理特性和应用研究，江西师范大学教授。于2007 年1 月起在江西师范大学理电学院工作。2008 年7 月－2009 年2 月在澳大利亚国立大学电子材料工程系访问。目前的主要研究方向为纳米晶的制备，及其电学，光学和磁学特性的研究，在SCI 期刊上发表论文30 多篇，SCI 引用200 多次。
研究方向
1     （或核/壳结构纳米晶）嵌入式固态矩阵和其电学，光学和磁学性质
2      超薄稀土介质存储器，逻辑和模拟设备应用技术
3      半金属铁磁体和钙钛矿锰氧化物
研究生培养
硕士研究生
年级
姓名
在读
2006
吴闰生
2006
王伟
2007
储建根

讲授课程
序号
课程名称
授课对象
1
原子物理学
学位课
2
半导体物理学
学位课
3
固体物理学
学位课

科研课题
Formation of nanocrystals (or nanocrystals with core/shell structure) and applications for photonics, floating gate and magnetic memory
2008, Australian Research Council Discovery Project, DP0881466
Chief investigator: C. L. Yuan
论文代表作
近5年发表论文:
1.       Preparation and photoluminescence properties of Ge nanocrystals embedded in SiO2 matrices with Ge-GeOx core-shell structure
R. S. Wu, X. F. Luo, C. L. Yuan, Z. R. Zhang, J. B. Yu
Physica E: Low-dimensional Systems and Nanostructures (In press)
2.       Dielectric matrix imposed stress-strain effect on photoluminescence of Ge Nanocrystals
R. S. Wu, X. F. Luo, C. L. Yuan, Z. R. Zhang
Solid. State. Commu. 149, 598 (2009)
3.       Preparation and photoluminescence properties of Ge nanocrystals embedded in Lu2O3 matrices with Ge-GeOx core-shell structure
W. Wang, R. S. Wu, C. L. Yuan
Physica B: Condensed Matter 403, 3997 (2008)
4.       Synthesis, photoluminescence and charge storage characteristics of isolated silver nanocrystals embedded in Al2O3 gate dielectric
X. F. Luo, C. L. Yuan, Z. R. Zhang
Thin Solid Films 516, 7675 (2008)
5.       Enhancement of Photoluminescence of Ge/GeO2 core/shell nanoparticles
C. L. Yuan, P. S. Lee
Europhys. Lett. 83, 47010 (2008)
6.       Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure
C. L. Yuan, P. S. Lee
Nanotechnology 19, 355206 (2008)
7.       Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1-δ
Q. Liu, C.L. Gan, C. L. Yuan, G. C. Han
Appl. Phys. Lett. 92, 032501 (2008)
8.       Formation, photoluminescence and charge storage characteristics of Au nanocrystals embedded in amorphous Al2O3 matrix
C. L. Yuan, P. S. Lee, S. L. Ye
Europhys. Lett. 80, 67003 (2007)
9.       Enhanced photoluminescence of ZnO/Er2O3 core-shell structure nanorods synthesized by pulsed laser deposition
S. Z. Li, C. L. Gan, H. Cai, C. L. Yuan, J. Guo, P. S. Lee, J. Ma
Appl. Phys. Lett. 90, 263106 (2007)
10.    Effect of substrate temperature on pulsed laser ablated Zn0.95Co0.05O diluted magnetic semiconducting thin films
Q. Liu, C. L. Yuan, C. L. Gan, G. C. Han
J. Appl. Phys. 101, 073902 (2007)
11.    Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
C. L. Yuan, P. Darmawan, M. Y. Chan, P. S. Lee
Europhys. Lett. 77, 67001 (2007)
12.    Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, M. Y. Chan, P. S. Lee, P. Darmawan, Y. Setiawan
Journal of Physics: Conference Series 61, 1312 (2007)
13.    Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan P. S. Lee, J. Ma
Appl. Phys. Lett. 89, 043104 (2006)
14.    Trap-controlled behaviour in ultrathin Lu2O3 high-k dielectrics
P. Darmawan, C. L. Yuan, P. S. Lee
Solid. State. Commu. 138, 571 (2006)
15.    Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by Pulsed Laser Ablation and application in memory device
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Nanotechnology 17, 3175 (2006)
16.    LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Electrochemical and Solid-State Letters, 9, F53 (2006)
17.    A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by Pulsed Laser Ablation
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Europhys. Lett. 74, 177 (2006)
18.    Enhancement of magnetization and curie temperature in Sr2FeMoO6 by Ni doping
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 89, 672 (2006)
19.    B-site ordering and magnetic behaviours in Ni-doped double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue and J. Wang
J. Phys. D: Appl. Phys. 38 4003 (2005)
20.    Phase formation and magnetoresistance of double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 88, 3279 (2005)
21.    Mechanically activated synthesis and magnetoresistance of nanocrystalline double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 88, 2635 (2005)
22.    Influence of preparation method on SrMoO4 impurity content and magnetotransport properties of double perovskite Sr2FeMoO6 polycrystals
C. L. Yuan, Y. Zhu, P. P. Ong, Z. X. Shen, C. K. Ong
Solid. State. Commu. 129, 551 (2004)
近5年国际会议论文:
1.       Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
International Conference on Nanoscience and Technology (ICN&T), July 30- August 4, 2006, Basel, Switzerland (口头报告)
2.       Rare-earth based ultrathin Lu2O3 for high-k dielectrics.
P. Darmawan, P. S. Chia, C. L. Yuan, P. S. Lee
International Conference on Nanoscience and Technology (ICN&T), July 30- August 4, 2006, Basel, Switzerland (口头报告)
3.       Effects of Ni doping on B-site ordering and magnetic behaviors of double perovskite Sr2FeMoO6 
L. Chen, J. Wang, J. M. Xue, C. L. Yuan 
3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) & International Union of Materials Research Societies 9th International Conference on Advanced Materials (IUMRS-ICAM 2005), July 2005, Singapore (口头报告)
4.       Magnetic and transport behaviors of Sr2FeMoO6 at high temperatures
C. L. Yuan, J. M. Xue, J. Wang
MRS-S National Conference on Advanced Materials, August 2004, Singapore
5.       Phase formation behaviors and magnetoresistance of double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
MRS-S National Conference on Advanced Materials, August 2004, Singapore