标题：朱长飞
个人简历
朱长飞（Zhu Changfei），男，汉族，教授，博士生导师，中国科学技  术大学副校长。
1962年6月生于安徽省庐江县泥河镇，1979至1990年在中国科学技术大学学习，获凝聚态物理博士学位，1991留校工作，先后多次去香港理工大学做访问学者。2000年起任中国科学技术大学教授，2004任材料科学与工程系执行主任，2005任科学技术处常务副处长，2006任科学技术处处长，2008年11月任中国科学技术大学校长助理。2010年4月起任中国科学技术大学副校长。
长期从事材料物理教学和过渡金属氧化物、宽带隙半导体与新概念太阳能电池研究工作。在国际学术期刊上发表论文80余篇。
学习工作履历
1979年考入中国科学技术大学物理系。
1984年在中国科学技术大学物理系获得理学学士。
1987年在中国科学技术大学物理系获得理学硕士。
1991年在中国科学技术大学物理系获得理学博士。
1999年和2004年先后两次赴香港理工大学电子与工程系做高级访问学者，历时近三年。
2000年任材料科学与工程系教授至今。
主要研究方向： 
1． 新型过渡金属氧化物功能材料的制备、物性研究及其在信息和能源领域的应用。
2． 宽带隙特种半导体（GaN，SiC，ZnO…..）薄膜与器件研究。
3． 新型太阳能电池材料研究。
代表论著：
1. Su JR, Zhu CF ,Raman scattering in the intermetallic compounds Sm1-xGdxAl2 (x=0, 0.01 and 0.02), MATER RES BULL 38 (15): 2025-2029 DEC 10 2003
2. Temperature-dependent ultrasonic study on parity-violating phase transitions of D- and L-alanine single crystals, W. Q. Wang, W. Min, C. F. Zhu and F. Yi, Phys. Chem. Chem. Phys 5., 4000-4003(2003).
3. A way to obtain visible blue light emission in porous silicon, Q. W. Chen, D.L.Zhu, C. Zhu, J. Wang and Y. G. Zhang, Appl. Phys. Lett. 82, 1018-1020(2003)
4. Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy, W.K. Fong, C.F. Zhu, B.H. Leung, C. Surya, b. Sundaravel, E.Z. Luo, J.B. Xu, I. H. Wilson, Microelectronics Reliability 42, 1179-1184(2002)
5. Charge transport and ultrasonic properties in La0.57Ca0.43MnO3 perovskite, Zheng RK, Zhu CF, Xie JQ, Huang RX, Li XG, MATERIALS CHEMISTRY AND PHYSICS ,75 (1-3): 121-124 Sp. Iss. SI APR 28 (2002)
6. Study of Low-Frequency Noise in Ga-Polarity GaN Epitaxial Layers, J. Q. Xie, W. K. Fong, B. H. Leung, C. F. Zhu and C. Surya, K. H. Wong, Fluctuation and Noise Letters, 1:(4)R163-R174(2001).
7. Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy, Leung BH, Fong WK, Zhu CF, and Surya C., J APPL PHYS 91 (6): 3706-3710 MAR 15 (2002).
8. Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers, Leung BH, Chan NH, Fong WK, Zhu CF, Ng SW, Lui HF, Tong KY, Surya C, Lu LW, Ge WK, IEEE T ELECTRON DEV 49 (2): 314-318 FEB (2002).
9. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy, L.W. Lu, W.K. Fong, C.F. Zhu, Leung BH, Surya C, Wang J, Ge WK, J CRYST GROWTH 234(1): 99-104 JAN (2002).
10. Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermadiate-temperature buffer layers, B.H. Leung, W.K. Fong, C.F. Zhu, C. Surya, IEEE Transactions on Electron Devices 48: (10), 2400-2404(2001).
11. Structural change and charge ordering correlated ultrasonic anomalies in La1-xCaxMnO3 (x=0.5,0.83) perovskite, R. K. Zheng, C. F. Zhu, J. Q. Xie and X. G. Li, Physical Review B, 63 (2): art. no. 024427 JAN 1 2001.
12. Characterization of high quality MBE-grown GaN films on intermediate-temperature buffer layers, C. F. Zhu, W. K. Fong, B. H. Leung, and C. Surya, Appl. Phys. A72, 495-497(2001).
13. Effects of rapid thermal annealing on the structural propertied of GaN thin films, C. F. Zhu, W. K. Fong, B. H. Leung, C. C. Cheng, and C.surya, IEEE Transactions on Electron Devices 48: (6), 1225-1230(2001).
14. Study of low-frequency excess noise in RTA annealed n-type gallium nitride，Zhu, C.F.; Fong, W.K.; Leung, B.H.; Cheng, C.C.; Surya, C.; Proceedings of the IEEE Hong Kong Electron Devices Meeting, 24-29 (2000)
15. Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films, C. Surya, C. F. Zhu, B. H. Leung, W. K. Fong, C. C. Cheng, J. K. O. Sin, Microelectronics Reliability, 40, 1905-1909(2000).
16. Ultrasonic anomalies in La0.67Ca0.33Mn03 near the Curie temperature, Changfei Zhu, Renkui Zheng, Jinrui Su, Jiang He, Applied Physics Letters, Vol.74:(23), 3504-3506(1999).
17. Ultrasonic evidence for magnetoclastic coupling in La0.60Y0.07Ca0.33MnO3 perovskites, Changfei Zhu, Renkui Zheng , Physical Review B, Vol.59:(17), 11169-11171(1999)
18. Ultrasonic study on charge ordering, magnetic, and structural changes in La0.25Ca0.75Mn0.93Cr0.07O3, X.G.Li, H.Chen, C.F.Zhu, H.D.Zhou, R.K.Zheng and J.H.Zhang, Applied Physics Letters 76(9), 1173-1175(2000).
19. Ultrasonic behaviors near different phase transitions in La1-xCaxMnO3, Changfei Zhu, Renkui Zheng, Jinrui Su and Wenhai Shong, Journal of Physics: Condense Matter 12:(6), 823-828(2000).
20. Ultrasonic anomalies in La0.67Ca0.33Mn1-xZnxO3 Perovskites, Changfei Zhu, and Renkui Zheng, J. Phys. Condens. Matter 11:(43), 8505-8510(1999)
21. Studies of Ultrasonic Properties of Triglycine Sulfate(TGS) Single Crystal, J. R. Su, C. F. Zhu, M. Wang, and Z. G. Zhu, Materials Research Bulletin 34:(12-13), 1885-1890(1999).
22. Experimental Evidence for the Unusual Damping Parameter in L-Arginine Phosphate Monohydrate Single Crystal, J. R. Su, C. F. Zhu, Z. G. Zhu, D. Xu, D. R. Yuan, Materials Research Bulletin, 35: (6), 977-983(2000).
23. Elastic-moduli and ultrasonic attenuation anomalies near antiferromagnetic phase transitions in La1-xCaxMnO3, Changfei Zhu, Renkui Zheng, Journal of Applied Physics 87:(7), 3579-3581(2000).