标题：张小文
桂林电子科技大学教师
个人简介：张小文，男，博士毕业，1977年生，湖南省邵阳市人。2004年－2008年在中国兵器工业集团第二一一研究所工作。2010年毕业于上海大学，获材料学专业博士学位。2010年10月进入桂林电子科技大学工作，作为主要成员曾参与国家自然科学基金项目4项，863项目1项，XX跨行业重点预研项目1项。在“J. Phys. D: Appl. Phys.”、“Thin Solid Films”、“Synthetic Metals”、“Semicond. Sci. Technol.”、“J. Cryst. Growth”和“Solid State Communications”等国际学术刊物发表了10多篇学术论文。研究方向半导体光电材料与器件（有机电致发光器件，薄膜晶体管器件，光学晶体材料）
近期发表的部分论文
[1] X.W. Zhang, X.Y. Jiang, M.A. Khan, J. Li, L. Zhang, J. Cao, W.Q. Zhu, Z.L. Zhang, Colour tunability of blue top-emitting organic light-emitting devices with single-mode resonance and improved performance by using C60 capping layer and dual emission layer, J. Phys. D: Appl. Phys. 42 (2009) 145106 (8pp).
[2] X.W. Zhang, J. Li, L. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, Top-emitting organic light-emitting device with high efficiency and low voltage using a silver-silver microcavity, Thin Solid Films 518 (2010) 1756-1759.
[3] X.W. Zhang, J. Li, M.A. Khan, L. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, Improved chromaticity and electron injection in blue organic light-emitting device by using a dual electron-transport layer with hole-blocking function, Semicond. Sci. Technol. 24 (2009) 075021 (5pp).
[4] X.W. Zhang, X.Y. Jiang, M.A. Khan, J. Cao, J.W. Ma, L. Zhang, J. Li, K. Haq, W.Q. Zhu, Z.L. Zhang, Enhanced electron injection in organic light-emitting devices by using a composite electron injection layer composed of 8-hydroquinolatolithium and cesium oxide, Solid State Communications 149 (2009) 652-656.
[5] X.W. Zhang, M.A. Khan, X.Y. Jiang, J. Cao, W.Q. Zhu, Z.L. Zhang, Electron injection property at the organic-metal interface in organic light-emitting devices revealed by current-voltage characteristics, Physica B 404 (2009) 1247-1250.
[6] X.W. Zhang, J. Li, L. Zhang, H.P. Lin, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Improved performance of Si-based top-emitting organic light-emitting device using MoOx buffer layer, Synthetic Metals 160 (2010) 788-790.
[7] X.W. Zhang, Z. Zhao, P. Zhang, R.B. Ji, Q.B. Li, Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects, J. Cryst. Growth 311 (2009) 286-291.
[8] X.W. Zhang, B.D. Ding, J. Li, L. Zhang, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Red top-emitting organic light-emitting device using 6,13-di-(3,5-diphenyl) phenylpentacene doped emitting system, Solid State Communications 150 (2010) 1132-1135.
[9] J. Li, X.W. Zhang, L. Zhang, K. Haq, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Performance enhancement of organic thin-film transistors using WO3-modified drain/source electrodes, Semicond. Sci. Technol. 24 (2009) 115012.
[10] J. Li, X.W. Zhang, L. Zhang, H. Zhang, X.Y. Jiang, K. Haq, W.Q. Zhu, Z.L. Zhang, MoOx interlayer to enhance performance of pentacene-TFTs with low-cost copper electrodes, Synthetic Metals 160 (2010) 376-379.
[11] J. Li, X.W. Zhang, L. Zhang, K. Haq, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Improving organic transistor performance through contact-area-limited doping , Solid State Communications 149 (2009) 1826-1830.
[12] J. Li, X.W. Zhang, L. Zhang, H. Zhang, X.Y. Jiang, W.Q. Zhu, Z.L. Zhang, Effect of a SiNx insulator on device properties of pentacene-TFTs with a low-cost copper source/drain electrode, Semicond. Sci. Technol. 25 (2010) 045027.
[13] L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature, Appl. Phys. Lett. 95 (2009) 072112.
[14] J. Li, X.W. Zhang, L. Zhang, H.P. Lin, H. Zhang, X.Y. Jiang, Z.L. Zhang, The feasibility of using an Al-alloy film as the source/drain electrode in a microcrystalline silicon thin-film transistor, Solid State Communications 150 (2010) 1560-1563.
[15] J. Li, L. Zhang, X.W. Zhang, H. Zhang, X.Y. Jiang, D.B. Yu, W.Q. Zhu, Z.L. Zhang, Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone treated Au electrodes, Current Applied Physics 10 (2010) 1302-1305.
[16] L. Zhang, J. Li, X.W. Zhang, D.B. Yu, H.P. Lin, K. Haq, X.Y. Jiang, Z.L. Zhang, Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator, Current Applied Physics 10 (2010) 1306-1308.
[17] L. Zhang, J. Li, X.W. Zhang, X.Y. Jiang, Z.L. Zhang, High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multi-layer gate dielectric, Thin Solid Films 518 (2010) 6130-6133.
[18] H.P. Lin, D.B. Yu, X.W. Zhang, J. Li, L. Zhang, X.Y. Jiang, Z.L. Zhang, Enhancing color purity and efficiency of white organic light-emitting diodes using a double-emitting layer, Semicond. Sci. Technol. 25 (2010) 105004.
国脚
个人简介姓名：张小文
英文名:Zhang Xiaowen
生日：1964-07-15
场上位置:球员
惯用脚：右脚 
出生地：兴宁市　　
国籍：中国 
代表国家队：出场15次，进3球 
欧洲三大杯：出场0次，进0球
欧洲冠军联赛：出场0次，进0球
张小文1964年出生于兴宁，足球运动健将。曾在兴宁城镇三小、兴宁一中就读，1975年参加兴宁县业余体校足球班训练，1981年选进广东省足球二队，1983年选上广东省足球队，1988年入选国家足球队。张小文身高1.78米，身体素质好，基本功扎实，善踢中后卫位置，其特点是头脑冷静，抢截凶狠，传球到位，掷界外球准确有力。曾两次参加“省港杯”足球比赛，并代表广东队参加第六届全国运动会荣获男子足球比赛冠军，多次参加国际国内的重大比赛。1988年，正值当打之年的他作为中国足球队的主力，参加了汉城奥运会。职业生涯比赛日期比赛性质代表球队对手球队主客场比分出场时间状态进球得牌分析1990-07-31四强赛中国韩国主场0:190首发0
[析]1989-10-24世预中国朝鲜主场1:046首发0
[析]1989-07-22世预中国伊朗客场2:390首发0
[析]1989-07-15世预中国伊朗主场2:090首发1
[析]1989-05-13友谊赛中国日本客场0:245替补0
[析]1989-05-10友谊赛中国日本客场2:266首发1
[析]1988-12-17亚洲杯中国伊朗客场0:0120首发0
[析]1988-12-14亚洲杯中国韩国客场1:2120首发0
[析]1988-12-12亚洲杯中国沙特阿拉伯客场0:190首发0
[析]1988-12-10亚洲杯中国科威特主场2:290首发0
[析]1988-12-06亚洲杯中国巴林主场1:090首发1
[析]1988-12-04亚洲杯中国叙利亚主场3:090首发0
[析]1988-09-21奥运会中国突尼斯主场0:090首发0
[析]1988-06-02友谊赛中国日本客场3:090首发0
[析]1988-02-16亚预中国印度主场1:190首发0
[析]