prompt_front: Now, answer the following question based on the text below, only give me the answer and do not output any other words.

Question: How is the vacuum processing system configured in terms of the arrangement of the vacuum processing apparatus?

Read the following text and answer briefly.

Context 1: PROBLEM TO BE SOLVED: To provide a vacuum processor which can suppress the rise of manufacture cost while coping with the enlargement of diameter of a sample, and besides is excellent in maintainability  SOLUTION: This vacuum processor comprises an air loader 1 which is equipped with a plurality of juxtaposed cassette stands 2a and 2b and a carrier 13 for carrying a wafer 20 from or to the cassette stands, a vacuum loader 7 which is equipped with etching treatment chambers 11 and 11b for processing the wafer and a vacuum carriage chamber 16 connected to them through gate valves 15a and 15b, and a lock device 6 consisting of a load lock chamber 6b and an unload lock chamber 6b equipped with gate valves 12a, 12b, 12c, and 12d for connecting the said carrier 13 with the vacuum carriage chamber 16  For the etching treatment chambers, two are provided only on the opposite side of the vacuum carriage chamber symmetrically about the axis line A passing the center, and besides the arrangement positions of the two etching treatment chambers are at an acute angle on the opposite side of the vacuum carriage chamber 
エッチング，ＣＶＤ（化学的気相成長），スパッタリング，アッシング，リンサ（水洗）等の枚葉処理をするのに好適な真空処理装置とそれを用いて半導体デバイスを製造する半導体製造ラインに関するものである。 Those etching, CVD (chemical vapor deposition), sputtering, ashing, to rinser (water washing) suitable vacuum processing apparatus for single wafer processing, such as a semiconductor manufacturing line for manufacturing a semiconductor device using the same  
【従来の技術】試料を処理する真空処理装置は、大別すると、カセットブロックと真空処理ブロックから構成されており、カセットブロックは、半導体製造ラインのベイ通路に面して長手方向に伸びるフロントを有し、試料用のカセットや試料のオリエンテーションを合わせるアライメントユニットと、大気ロボットがある。 BACKGROUND OF THE INVENTION Vacuum processing apparatus for processing a sample, the roughly is constituted by a cassette block and a vacuum processing block, the cassette block, a front extending in the longitudinal direction facing the bay aisle of a semiconductor manufacturing line a, an alignment unit for aligning the cassette and sample orientation for sample, there is an atmospheric robot  真空処理ブロックには、ロード側ロードロック室，アンロード側ロードロック室，真空処理室，後真空処理室，真空ポンプ及び真空ロボット等が設けられている。 The vacuum processing block, the load-side load lock chamber, the unload side load lock chamber, the vacuum processing chamber, a rear vacuum processing chamber, a vacuum pump and a vacuum robot and the like 
【０００３】これらの真空処理装置では、カセットブロックのカセットから取り出された試料が、大気ロボットにより真空処理ブロックのロードロック室まで搬送される。  In these vacuum processing apparatus, a sample taken from the cassette in the cassette block is transported to the load lock chamber in the vacuum processing block by the atmospheric robot  ロードロック室から真空ロボットによりさらに処理室に搬送され、電極構造体上にセットされた試料は、プラズマエッチング等の処理がなされる。 Is conveyed from the load lock chamber to the further processing chamber by the vacuum robot, the sample is set on an electrode structure, processing such as plasma etching is performed  その後、必要に応じて後真空処理室に搬送，処理される。 Thereafter, the conveyance to the rear vacuum processing chamber as necessary and processed  処理済みの試料は、真空ロボット及び大気ロボットによりカセットブロックのカセットに搬送される。 Processed sample is conveyed to the cassette of the cassette block by the vacuum robot and the atmospheric robot 
【０００４】試料をプラズマエッチング処理する真空処理装置の例としては、例えば特公昭61−8153号公報，特開昭63−133532号公報，特公平6−30369号公報，特開平  Examples of the sample vacuum processing apparatus for plasma etching treatment, for example Japanese Patent Publication 61-8153, JP-Sho 63-133532 and JP Kokoku 6-30369, JP-A No 
6−314729号公報，特開平6−314730号公報，米国特許第 6-314729, JP-A No  6-314730, JP-U S  Patent No 
5,314,509号明細書および5,784,799号明細書に記載されたようなものがある。 There are such as described in Pat and 5,784,799 Pat 5,314,509 
509号明細書に記載された装置は、真空処理ブロックの中央付近に真空ロボット、その周囲に３個の処理室が同心状に配置され、真空ロボットとカセットブロックの間に、ロード側ロードロック室，アンロード側ロードロック室が設けられている。 Device described in 509 Pat are vacuum robot in the vicinity of the center of the vacuum processing block, three process chambers around it are arranged concentrically, between the vacuum robot and the cassette block, the load-side load-lock chamber , unload side load lock chamber is provided  これらの装置では、大気ロボットや真空ロボットの搬送アームの回転角度が大きく従って装置全体の必要床面積が大きいという問題がある。 In these devices, there is a problem that needs floor space for the entire rotation angle is large therefore device of the transfer arm of the atmospheric robot and the vacuum robot is large 
【０００６】一方、真空処理装置の真空処理ブロック内の処理室や真空ポンプその他各種の配管機器については、定期，不定期に点検修理等のメンテナンスを行うことが必要である。  On the other hand, the processing chamber and the vacuum pump and other various piping components of the vacuum processing block of the vacuum processing apparatus, periodically, it is necessary to perform maintenance such as inspection and repair irregularly  そのため、一般に、真空処理ブロックの周囲には、扉が設けられており、この扉を開けることにより、ロードロック室，アンロードロック室，処理室，真空ロボット及び各種の配管機器の点検修理ができるようになっている。 Therefore, in general, around the vacuum processing block, the door is provided by opening the door, load lock chambers, unload lock chambers, processing chambers, the servicing of the vacuum robot and various piping devices It has become way 
キャリアポッドが必要となるために、約３５０mm程度と大きくなり、複数のキャリアポッドを収納するカセットブロックの幅も大きくなる。 For carrier pod required, large as about 350 mm, the greater width of the cassette block for housing a plurality of carrier pods  この幅に合わせて真空処理ブロックの幅を決定すると、真空処理装置全体が大きなスペースを必要とすることになる。 When determining the width of the vacuum processing block in accordance with the this width, the entire vacuum processing apparatus requires a large space  一例として、４個のキャリアポッドを収納するカセットブロックについて考えると、試料の直径ｄが８インチから１２インチになった場合、カセットの幅は少なくとも約４０cm以上大きくならざるを得ない。 As an example, considering the cassette block for accommodating four carriers pods, if the diameter d of the sample was a 12-inch 8 inch wide cassette inevitably increases at least about 40cm or more 
【０００８】一方、試料に各種の処理を行いながら大量の処理を行うために、一般の半導体製造ラインでは、同じ処理を行う複数の真空処理装置を同じベイに集め、各ベイ間の搬送を自動またはマニュアルで行っている。 On the other hand, in order to perform a lot of processing while performing various processes in the sample, in a general semiconductor manufacturing lines, gathering a plurality of vacuum processing apparatus for performing the same processing in the same bay, automatic conveyance between the bays or it is carried out manually  このような半導体製造ラインは、高いクリーン度を必要とするため、半導体製造ライン全体が大きなクリーンルーム内に設置される。 Such a semiconductor manufacturing line, requires a high degree of cleanliness, the whole semiconductor manufacturing line is placed in a large clean room  試料の大口径化に伴う真空処理装置の大型化は、クリーンルーム占有面積の大型化を伴うが、これはもともと建設コストの高いクリーンルームの建設コストを一層増加させることになる。 Size of the vacuum processing apparatus due to the large diameter of the sample is accompanied by a large clean room area occupied, which will be further increased construction costs of the high construction cost clean room originally  もし、同じ面積のクリーンルームに占有面積の大きな真空処理装置を設置するとすれば、真空処理装置の全体の台数を減らすか、あるいは各真空処理装置間の間隔を狭くせざるを得ない。 If, if the clean room of the same area to install a large vacuum processing apparatus of the occupied area, reduce the overall number of the vacuum processing apparatus, or interval narrower forced between the vacuum processing apparatus  同じ面積のクリーンルームにおける真空処理装置の設置台数減少は、必然的に半導体の製造ラインの生産性の低下ひいては半導体の製造コストの上昇を伴う。 Installed base reduction in the vacuum processing apparatus in a clean room having the same area is accompanied inevitably rise of the semiconductor decrease and thus the semiconductor manufacturing cost of productivity of the production line  他方、各真空処理装置間の間隔を狭くすることは、点検修理のためのメンテナンススペースが不足し、真空処理装置のメンテナンス性を著しく阻害する。 On the other hand, to reduce the distance between each of the vacuum processing apparatus, the maintenance space for inspection and repair is insufficient to significantly inhibit the maintenance of the vacuum processing apparatus 
【０００９】本発明の目的は、試料の大口径化に対応しつつ、製造コストの上昇を抑えることのできる真空処理装置を提供することにある。 An object of the present invention, while corresponding to the large diameter of the sample, is to provide a vacuum processing apparatus capable of suppressing an increase in manufacturing cost 
【００１０】本発明の他の目的は、試料の大口径化に対応しつつ、メンテナンス性に優れた真空処理装置を提供することにある。 Another object of the present invention, while corresponding to the large diameter of the sample is to provide a vacuum processing apparatus having excellent maintainability 
【００１１】本発明の他の目的は、試料の大口径化に対応しつつ、真空処理装置の必要設置台数を確保して製造コストの上昇を抑え、かつ、メンテナンス性も損なわない半導体製造ラインを提供することにある。 Another object of the present invention, while corresponding to the large diameter of the sample, to ensure the necessary number of installed vacuum processing apparatus suppressing an increase in manufacturing cost, and a semiconductor manufacturing line is not impaired maintainability It is to provide 
【課題を解決するための手段】本発明は、並設した複数のカセット台およびカセット台から、あるいはカセット台へウエハを搬送するための搬送装置を備えた大気ローダと、ウエハを処理するための真空処理室およびこれにゲート弁を介して連接された真空搬送室を備えた真空ローダと、前記搬送装置と前記真空搬送室とを連接するためのゲート弁を備えたロードロック室およびアンロードロック室からなるロック装置とを含んで構成される真空処理装置において、ウエハを処理するための真空処理室は、有磁場ＵＨＦ帯電磁波放射放電方式リアクタ（以下、ＵＨＦ−ＥＣＲリアクタという。）によって形成される真空処理室であり、該真空処理室には、分解可能な側壁インナーユニットおよびアンテナが設けられ、該真空処理室は、真空搬 The present invention SUMMARY OF THE INVENTION from a plurality of cassette tables and cassette stand juxtaposed, or the atmosphere loader having a conveying device for conveying the wafer to the cassette table, for processing a wafer the load lock chamber and the unload lock having a gate valve for connecting the vacuum loader vacuum processing chamber and having a vacuum transfer chamber which is connected via a gate valve to the said vacuum transfer chamber and the conveying device in the vacuum processing apparatus configured to include a lock device comprising a chamber, a vacuum processing chamber for processing a wafer it is formed by a magnetic field UHF band electromagnetic wave radiation discharge type reactor (hereinafter  referred UHF-ECR reactor) that a vacuum processing chamber, the vacuum processing chamber, degradable sidewall inner unit and an antenna are provided, the vacuum processing chamber, a vacuum transportable 室およびロック装置の中央を通る軸線に対して対称にして、かつ真空搬送室を中心にしてロック装置の反対側のみに２つ設けられ、かつ真空搬送室に対して前記２つの真空処理室の配置位置は鋭角をなしている真空処理装置を提供する。 And symmetrically with respect to the axis passing through the center of the chamber and the locking device, and the opposite side only two provided for to lock device around the vacuum transfer chamber, and the two vacuum processing chamber to the vacuum transfer chamber position is to provide a vacuum processing apparatus which forms an acute angle 
ＣＲリアクタによって形成される真空処理室であり、該真空処理室は、真空搬送室およびロック装置の中央を通る軸線に対して対称にして、かつ真空搬送室を中心にしてロック装置の反対側のみに２つ設けられ、かつ真空搬送室に対して前記２つの真空処理室の配置位置は鋭角をなしており、ＵＨＦ−ＥＣＲのアンテナは、前記軸線に対して平行で、かつ前記真空搬送室とは反対側に開放される真空処理装置を提供する。 A vacuum processing chamber formed by a CR reactor, vacuum processing chamber, and symmetrically with respect to the axis passing through the center of the vacuum transfer chamber and the locking device, and the opposite side of the locking device around the vacuum transfer chamber only two provided, and positions of the two vacuum processing chamber to the vacuum transfer chamber is an acute angle, the UHF-ECR antennas, and parallel, and the vacuum transfer chamber with respect to said axis to provides a vacuum processing apparatus is opened to the opposite side 
かつ真空搬送室を中心にしてロック装置の反対側のみに２つ設けられ、かつ真空搬送室に対して前記２つの真空処理室の配置位置は鋭角をなしており、大気ローダ，真空ローダおよびロック装置はＴ字配置とされた真空処理方法を提供する。 And around the vacuum transfer chamber opposite only two provided a locking device, and positions of the two vacuum processing chamber to the vacuum transfer chamber is an acute angle, atmospheric loader, vacuum loader and locking apparatus to provide a vacuum processing method which is a T-arrangement 
【００１５】本発明は、並設した複数のカセット台およびカセット台から、あるいはカセット台へウエハを搬送するための搬送装置を備えた大気ローダと、ウエハを処理するための真空処理室およびこれにゲート弁を介して連接された真空搬送室を備えた真空ローダと、前記搬送装置と前記真空搬送室とを連接するためのゲート弁を備えたロードロック室およびアンロードロック室からなるロック装置とを含んで構成される真空処理装置が平行に複数台並設された真空処理システムにおいて、ウエハを処理するための真空処理室は、ＵＨＦ−ＥＣＲリアクタによって形成される真空処理室であり、該真空処理室は、真空搬送室およびロック装置の中央を通る軸線に対して対称にして、かつ真空搬送室を中心にしてロック装置の反対側のみに２ The present invention, a plurality of cassette tables and cassette stand juxtaposed, or the atmosphere loader having a conveying device for conveying the wafer to the cassette base, the vacuum processing chamber for processing the wafer and to a vacuum loader having a vacuum transfer chamber which is connected via a gate valve, the locking consisting of the conveying device and the load lock chamber and the unload lock chamber with gate valves for connecting the said vacuum transfer chamber apparatus and in the vacuum processing system vacuum processing apparatus is constituted with a plurality Tainami set in parallel include vacuum processing chamber for processing a wafer is vacuum processing chamber formed by the UHF-ECR reactor, vacuum processing chamber, and symmetrically with respect to the axis passing through the center of the vacuum transfer chamber and the locking device, and 2 only on the opposite side of the locking device around the vacuum transfer chamber 設けられ、かつ真空搬送室に対して前記２つの真空処理室の配置位置は鋭角をなしており、並設された複数の真空処理装置のすべての真空処理室に一直線上に配列される真空処理システムを提供する。 Provided, and positions of the two vacuum processing chamber to the vacuum transfer chamber is an acute angle, a vacuum process that is arranged in alignment with all of the vacuum processing chamber of a plurality of vacuum processing apparatus are arranged in parallel to provide a system 
【発明の実施の形態】以下、本発明にかかる一実施例を図面に基づいて説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be explained based on an embodiment according to the present invention with reference to the accompanying drawings 
１０Ｂ，１０Ｃで示す。 10B, shown by 10C 
【００１８】図１に示す真空処理システムを説明する前に、図２から図４に基づいて真空処理装置を説明する。  Before describing the vacuum processing system shown in FIG  1, illustrating a vacuum processing apparatus on the basis of FIGS  2-4 
５ｂを介して連接された真空搬送室１６を備えた真空ローダ７と、前記搬送装置と前記真空搬送室とを連接するためのゲート弁を備えたロードロック室６ａおよびアンロードロック室６ｂからなるロック装置６とを含んで構成される。 5b a vacuum loader 7 having a vacuum transfer chamber 16 which is connected via consist load lock chamber 6a and the unload lock chamber 6b has a gate valve for connecting and said vacuum transfer chamber and the conveying device configured to include a locking device 6 
平行形に配置され、その位置および姿勢を変えることなく、装置への導入／払出しが可能な位置、すなわち、カセット１ａないし１ｃを略水平の平面上で常に一定の位置に固定される。 Arranged parallel type, without changing its position and orientation, the introduction / dispensing of the locations of the device, i e , always fixed to a constant position to free the cassette 1a 1c on a substantially horizontal plane  カセット台２ａおよび２ｂは、平行に隣合わせて配置してある。 Cassette tables 2a and 2b, are arranged side by side in parallel  カセット台２ｃは、最右端に配置してある。 Cassette table 2c is, are arranged on the top right edge  カセット１ａおよび１ｂは、処理を行うための末処理ウエハを収納したり、処理済みのウエハを回収するためのもので、複数枚（通常２５枚）の被処理基板であるウエハ２０が収納可能となっている。 Cassettes 1a and 1b, or storing the processed wafers end for processing, for recovering the processed wafer, the wafer 20 is a substrate to be processed in a plurality (25 pieces Normal) can be stored going on  カセット１ｃは、この場合、プラズマを用いたドライクリーニング（以下、「プラズマクリーニング」という。）を行うためのダミーウエハを収納したり、プラズマクリーニング後のダミーウエハを回収するためのもので、複数枚（通常２５枚）のダミーウエハ３０が収納可能となっている。 Cassette 1c in this case, dry cleaning using plasma (hereinafter, "plasma cleaning" hereinafter ) Or housing a dummy wafer for performing, for recovering the dummy wafers after plasma cleaning, a plurality (usually dummy wafer 30 of 25 sheets) has become can be stored 
とカセット１ａ，１ｂとの間でウエハ２０を、そしてロードロック室６ａおよびアンロードロック室６ｂとカセット１ｃとの間でダミーウエハ３０を授受可能に動作する。 A cassette 1a, the wafer 20 with the 1b, and operates to allow exchanging dummy wafer 30 between the load lock chamber 6a and the unload lock chamber 6b and the cassette 1c 
ａ，１５ｂを介して真空処理室であるエッチング処理室１１ａ，１１ｂが設けてある。 a, etching chamber is a vacuum processing chamber through a 15b 11a, 11b are provided  以下、エッチング処理室を例に取って説明する。 Hereinafter will be described taking the etching chamber as an example  真空搬送室１６内には、ロードロック室６ａ，アンロード室６ｂおよびエッチング処理室１１ａ，１１ｂとの間でウエハ２０またはダミーウエハ３０を授受可能に動作する搬送装置１４が設けてある。 The vacuum transfer chamber 16, load lock chambers 6a, unload chamber 6b and etching chambers 11a, conveying device 14 is provided that operates to allow transferring the wafer 20 or dummy wafer 30 between 11b  真空搬送室１６は、独立に真空排気可能な真空排気装置１７を装備している。 Vacuum transfer chamber 16 is equipped with a vacuum evacuable vacuum evacuation device 17 independently 
【００２２】ＵＨＦ−ＥＣＲリアクタのエッチング処理室１１ａ，１１ｂは、この場合、同一の構成で対称配置とされてエッチング処理が行われるようになっている。 The UHF-ECR reactor etching chambers 11a, 11b is in this case are symmetrically arranged in the same configuration so that the etching process is performed 
エッチング処理室１１ａを例に説明する。 The etching chamber 11a will be described as an example  エッチング処理室１１ａは、ウエハ２０を配置するための試料台を有し、試料台８ａの上部に放電部７ａを形成するように放電室が設けてある。 Etching chamber 11a has a sample stage for placing the wafer 20, the discharge chamber so as to form a discharge portion 7a at the top of the sample table 8a is provided  エッチング処理室１１ａは、放電部７ａへの処理ガス供給のためのガス導入装置１０ａを有するとともに、エッチング処理室１１ａ内を所定圧力に減圧排気する真空排気装置９ａを有し、放電部７ａの処理ガスをプラズマ化するための、この場合、ＵＨＦ波と磁場の発生手段を有している。 The etching chambers 11a, which has a gas introduction device 10a for processing the gas supply to the discharge portion 7a, having a vacuum exhaust device 9a for evacuating the etching chamber 11a to a predetermined pressure, the process of the discharge portion 7a for plasma gas, in this case, it has a generating means of the UHF wave and magnetic field 
９は、センサ１８からの計測値を所定値と比較して、エッチング処理室内のクリーニング時期を判断する。 9, the measured value from the sensor 18 is compared with a predetermined value to determine the cleaning time of the etching chamber  また、制御装置１９は、真空搬送装置１３および１４を制御して、ダミーウエハ３０をカセット１ｃおよびエッチング処理室１１ａないし１１ｂの間で搬送制御する。 The control device 19 controls the vacuum transfer apparatus 13 and 14, to the dummy wafer 30 to the cassette 1c and the etching process chamber 11a carrying controlled between 11b 
いずれかの方法によりウエハ処理またはプラズマクリーニングを実行する。 It executes the wafer processing or plasma cleaning by any method 
によって、カセット１ａ内のウエハ２０を下から順にエッチング処理室１１ａ，１１ｂに搬入し、それぞれのウエハ２０をエッチング処理する。 Accordingly, the wafer 20 to an etching treatment chamber in order from the bottom 11a of the cassette 1a, and carried into 11b, and each of the wafer 20 is etched  処理されたそれぞれのウエハ２０は、真空搬送装置１４および搬送装置１３によって、カセット１ａ内の元の位置に収納する。 Each wafer 20 processed by vacuum transfer apparatus 14 and the carrier 13 is housed in its original position in the cassette 1a  この場合、運転開始から終了に至る間、カセットの位置および姿勢を変えることなく未処理のウエハを取り出し、そして処理済みのウエハを未処理のウエハが収納されていた元の位置に戻して収納する。 In this case, while leading to completion of the start of the operation, it takes out an unprocessed wafer without changing the position and posture of the cassettes, and the processed wafer unprocessed wafer is accommodated back into position which is housed   このようにすることで、生産ラインの自動化への対応が容易で、且つ、ゴミの発生によるウエハの汚染を低減でき、高い生産効率と高い製品歩留まりを実現できる。 In this way, it is easy to respond to automation of production lines, and can reduce the contamination of the wafer due to the generation of dust can achieve high production efficiency and high product yield 
の処理が全て終り次のカセットの内のウエハ処理に移る前でも良い。 Of the process is good, even before moving on to the wafer processing of all end next cassette 
【００２７】プラズマクリーニングの実施にあたっては、次の順序で行われる。 The practice of plasma cleaning is performed in the following order  この場合、カセット１ｃに収納されたダミーウエハ３０（この
Context 2: \section*{Dynamical Behaviour of $O$ in Lattice Gases}

The dynamical behaviour of the anisotropic order parameter  $m$ [see Eq ~\eqref{eq:def-m} in the Letter] following a quench to the critical point is well described by
the Gaussian theory for all the three lattice gas models studied, $i e ,$ driven lattice gas with either constant (IDLG) or random (RDLG) infinite drive and equilibrium lattice gas (LG)  In other words, in the short-time regime, $m \sim t^{1/2}$ [see Eq  \eqref{eq:mt}] and the Binder cumulant $g$ of the lowest transverse mode [defined in Eq  \eqref{eq:binder}] is zero in this regime  The alternative order parameter $O,$ however, distinguishes between the driven (IDLG, RDLG) and the equilibrium (LG) lattice gases  

In order to understand  this, we first write the phenomenological scaling form for $O$,  analogous to Eq  \eqref{eq:scalingass} in  the Letter,
\begin{eqnarray}
O (t, L_{\parallel} ; S_\Delta) = L_{\parallel}^{-\beta/[\nu(1+\Delta)]} \tilde f_O (t/L_{\parallel}^{z/(1+\Delta)} ; S_\Delta) \quad
\label{eq:Oscalingass}
\end{eqnarray}
We already remarked that, in the LG, this scaling form is not compatible with the prediction $O \sim t^{1/8}  L_{\parallel}^{-1/2}$ of the Gaussian theory   However, following Ref  \cite{AS2002}, it can be argued that, at short times, the only dependence of $O$ on the system size $L_{\parallel}$ is of the form $O \sim L_\parallel^{-1/2}$ which is very well confirmed by numerical simulations  Accordingly,  the generic behaviour of $O$ can be assumed to be
\begin{eqnarray}
O \sim t^{\alpha} L_\parallel^{-1/2}, \label{eq:O}
\end{eqnarray}
where $\alpha$ is a phenomenological exponent to be determined  This, along with Eq  \eqref{eq:Oscalingass}, implies $\tilde f_O(x) \sim x^{\alpha} $ Comparing the finite-size behaviour in Eq ~\eqref{eq:O} with Eq ~\eqref{eq:Oscalingass} one actually infers,
\begin{eqnarray}
\alpha &=& \frac{1+ \Delta -2 \beta/\nu}{2 \, (4- \eta)}  \label{eq:alpha}
\end{eqnarray}
This equation, together with the hyperscaling relation $\Delta - 2 \beta/\nu= - \eta$ in two spatial dimensions, shows that the prediction $\alpha = 1/8$ of the Gaussian theory [see Eq  \eqref{eq:Ot}] can be obtained only when $\eta=0,$ which is the case for the IDLG (exactly) and the RDLG (approximately) but not for the LG  

On the other hand,  Eq ~\eqref{eq:alpha} predicts $\alpha = 1/10$ upon substituting the values of the critical exponents corresponding to the Ising  universality class (LG)  This is consistent with the numerical simulation results presented in the main text, see Fig  \ref{fig:ising}(b) therein 

\begin{figure}[th]
\vspace*{0 2 cm}
 \centering
 \includegraphics[width=10 cm]{ /compare_binder pdf}

\caption{Comparison between the temporal evolution of the Binder cumulants $g$ corresponding to the $12^{th}$ transverse mode, $i e ,$ with $n_\perp =12,$ in the LG (lowest curve), IDLG and RDLG (two upper curves) on a $32 \times 32$ lattice  \label{fig:b}}
 \label{fig:binder}
\end{figure}


The emergence of this new value $1/10$ of the exponent $\alpha$ must be traced back to the non-Gaussian nature of higher fluctuating modes in the LG  In fact, even though the lowest mode behaves identically in all the three models we considered,  characterized by the same behaviour of $m$, higher modes show a significant difference in the non-driven case   


To illustrate this, we measured the Binder cumulants of higher modes which is defined  analogously to Eq ~(11), using transverse modes other than the first, i e , with $\mu=\tilde \sigma(0,2 \pi n_\bot/L_\bot)$ and $n_\bot>1 $  
 Figure \ref{fig:b} compares the same for all the three lattice gases for the mode with $n_\perp =12$ on a $32 \times 32$ lattice  Clearly, the curve corresponding to the LG (lowest, blue) departs from Gaussian behaviour $g=0$ (in practice, $e g ,$ $|g| \lesssim 0 005,$ corresponding to the shaded gray area) much earlier than it does for the IDLG  or RDLG (two upper curves, red and green respectively) 

Accordingly, the different dynamical behaviour of $O$, which involves a sum over all modes, can be attributed to the non-Gaussian nature of the higher modes in the LG  
Such a departure is not entirely surprising  In fact, for higher modes, mesoscopic descriptions such as the ones in Eqs  \eqref{eq:L-DLG} or \eqref{eq:g_evol} are not expected to hold, while the anisotropy at the microscopic level could be the mechanism leading to the Gaussianity of higher modes in the driven models 





ground_truth: Multiple vacuum processing apparatuses are arranged in parallel.

prompt_front: Now, answer the following question based on the text below, only give me the answer and do not output any other words.

Question: What is the scaling form for the alternative order parameter O?

Read the following text and answer briefly.

Context 3: \section{Model equations} \label{sec:equations}

In drift-fluid models the continuity equation
\begin{align}
 \frac{\partial n}{\partial t} + \nabla\cdot\left( n \vec u_E  \right) &= 0 \label{eq:generala} 
\end{align}
describes the dynamics of the electron density $n$  Here
$\vec u_E := (\hat{\vec b} \times \nabla \phi)/B$ gives the electric drift
velocity in a magnetic field $\vec B := B \hat{\vec b}$ and an electric
potential $\phi$  We neglect contributions of the diamagnetic drift~\cite{Kube2016} 




Equation~\eqref{eq:generala} is closed by invoking quasineutrality, i e  the divergence of the ion polarization, 
the electron diamagnetic and the gravitational drift currents must vanish
\begin{align}
  \nabla\cdot\left( \frac{n}{\Omega} \left( \frac{\partial}{\partial t} 
  + \vec u_E \cdot\nabla  \right)\frac{\nabla_\perp \phi}{B}  + n\vec u_d - n\vec u_g\right) &=0
    
 
 
  \label{eq:generalb}
\end{align}
Here we denote 
$\nabla_\perp\phi/B := - \hat{\vec b} \times \vec u_E$, 
the electron diamagnetic drift
$\vec u_d := - T_e(\hat{\vec b} \times\nabla n ) /enB$
with the electron temperature $T_e$,
the ion gravitational drift velocity  
$\vec u_g := m_i \hat{\vec b} \times \vec g /B$
with ion mass $m_i$, and the ion gyro-frequency
$\Omega := eB/m_i$ 

Combining Eq ~\eqref{eq:generalb} with Eq ~\eqref{eq:generala} yields
\begin{align}
 \frac{\partial \rho}{\partial t} + \nabla\cdot\left( \rho\vec u_E \right) + \nabla \cdot\left( n(\vec u_\psi + \vec u_d + \vec u_g) \right) &= 0\label{eq:vorticity}
\end{align}
with the polarization charge density 
$\rho = \nabla\cdot( n\nabla_\perp \phi / \Omega B)$ 
and
$\vec u_\psi := \hat{\vec b}\times \nabla\psi /B$ 
with 
$\psi:= m_i\vec u_E^2 /2e$ 
We exploit this form of Eq ~\eqref{eq:generalb} in our numerical simulations 

Equations~\eqref{eq:generala} and \eqref{eq:generalb} respectively \eqref{eq:vorticity} have several invariants 
First, in Eq ~\eqref{eq:generala} the relative particle number 
$M(t) := \int \mathrm{dA}\, (n-n_0)$ is conserved over time
$\d M(t)/\d t = 0$  
Furthermore, we integrate 
$( T_e(1+\ln n) -T_e \ln B)\partial_t n$
as well as
$-e\phi \partial_t\rho - (m_i\vec u_E^2/2+gm_ix - T_e\ln B)\partial_t n$ 
over the domain to get, disregarding boundary contributions,
\begin{align}
  \frac{\d}{\d t}\left[T_eS(t) + H(t) \right] = 0, \label{eq:energya}\\ 
    \frac{\d}{\d t} \left[ E(t) - G(t) - H(t)\right] =  0,
    \label{eq:energyb}
\end{align}
where we define 
the entropy
$S(t):=\int \mathrm{dA}\, [n\ln(n/n_0) - (n-n_0)]$,  
the kinetic energy 
$E(t):=m_i \int \mathrm{dA}\, n\vec u_E^2/2$ 
and the potential energies
$G(t) := m_i g\int \mathrm{dA}\, x(n-n_0)$
and
$H(t) := T_e\int \mathrm{dA}\, (n-n_0) \ln (B^{-1})$ 
Note that $n\ln( n/n_0) - n + n_0 \approx (n-n_0)^2/2$ for $|(n-n_0)/n_0| \ll 1$ and $S(t)$ thus reduces to the 
local entropy form in Reference~\cite{Kube2016}  

We now set up a gravitational field $\vec g = g\hat x$ and a constant homogeneous background
magnetic field $\vec B = B_0 \hat z$ in a Cartesian coordinate system 
Then the divergences of the electric and gravitational drift velocities $\nabla\cdot\vec u_E$ and $\nabla\cdot\vec u_g$
and the diamagnetic current $\nabla\cdot(n\vec u_d)$ vanish, which makes the 
flow incompressible  Furthermore, the magnetic potential energy vanishes $H(t) = 0$ 

In a second system we model the inhomogeneous magnetic field present in tokamaks as
$\vec B := B_0 (1+ x/R_0)^{-1}\hat z$ and neglect the gravitational drift $\vec u_g = 0$ 
Then, the potential energy $G(t) = 0$  
Note that 
$H(t) = m_i \ensuremath{C_\mathrm{s}}^2/R_0\int\mathrm{dA}\, x(n-n_0) +\mathcal O(R_0^{-2}) $
reduces to $G(t)$ with the effective gravity $g_\text{eff}:= \ensuremath{C_\mathrm{s}}^2/R_0$ with $\ensuremath{C_\mathrm{s}}^2 := T_e/m_i$  
For the rest of this letter we treat $g$ and $g_\text{eff}$ as well as $G(t)$ and $H(t)$ on the same footing 
The magnetic field inhomogeneity thus entails compressible flows, which is 
the only difference to the model describing dynamics in a homogeneous magnetic field introduced above  
Since both $S(t)\geq 0$ and $E(t)\geq 0$ we further derive from Eq ~\eqref{eq:energya} and Eq ~\eqref{eq:energyb} that the kinetic energy
is bounded by $E(t) \leq T_eS(t) + E(t) = T_e S(0)$; a feature absent from the gravitational system with 
incompressible flows, where $S(t) = S(0)$  

We now show that the invariants Eqs ~\eqref{eq:energya} and \eqref{eq:energyb} present restrictions on the velocity and
acceleration of plasma blobs  
First, we define the blobs' center of mass (COM) via $X(t):= \int\mathrm{dA}\, x(n-n_0)/M$ and 
its COM velocity as $V(t):=\d X(t)/\d t$  
The latter is proportional to the total radial particle flux~\cite{Garcia_Bian_Fundamensky_POP_2006, Held2016a} 
We assume
that $n>n_0$ and $(n-n_0)^2/2 \leq [ n\ln (n/n_0) - (n-n_0)]n $ to show for both systems 
\begin{align}
  (MV)^2 &= \left( \int \mathrm{dA}\, n{\phi_y}/{B} \right)^2
  = \left( \int \mathrm{dA}\, (n-n_0){\phi_y}/{B} \right)^2\nonumber\\
 
&\leq 2 \left( \int \mathrm{dA}\, \left[n\ln (n/n_0) -(n-n_0)\right]^{1/2}\sqrt{n}{\phi_y}/{B}\right)^2\nonumber\\
 
  &\leq 4 S(0) E(t)/m_i 
 
  \label{eq:inequality}
\end{align}
Here we use the Cauchy-Schwartz inequality and 
$\phi_y:=\partial\phi/\partial y$  
Note that although we derive the inequality Eq ~\eqref{eq:inequality} only for amplitudes $\triangle n >0$  we assume that the results also hold for depletions  This is justified by our numerical results later in this letter  
If we initialize our density field with a seeded blob of radius $\ell$ and amplitude $\triangle n$ as 
\begin{align}
  n(\vec x, 0) &= n_0 + \triangle n \exp\left( -\frac{\vec x^2}{2\ell^2} \right), \label{eq:inita}
 
 
\end{align}
and  
$\phi(\vec x, 0 ) = 0$,
we immediately have $M := M(0) = 2\pi \ell^2 \triangle n$, $E(0) = G(0) = 0$ and 
$S(0) = 2\pi \ell^2 f(\triangle n)$, where $f(\triangle n)$ captures the amplitude dependence of 
the integral for $S(0)$  

The acceleration for both incompressible and compressible flows can be estimated
by assuming a linear acceleration $V=A_0t$ and $X=A_0t^2/2$~\cite{Held2016a} and using 
$E(t) = G(t) = m_igMX(t)$ in Eq ~\eqref{eq:inequality}
\begin{align}
  \frac{A_0}{g} =  \mathcal Q\frac{2S(0)}{M} \approx \frac{\mathcal Q}{2} \frac{\triangle n }{n_0+2\triangle n/9} 
  \label{eq:acceleration}
\end{align}
Here, we use the Pad\'e approximation of order $(1/1)$ of $2S(0)/M $
and define a model parameter $\mathcal Q$ with $0<\mathcal Q\leq1$ to be determined by numerical simulations 
Note that the Pad\'e approximation is a better approximation than a simple 
truncated Taylor expansion especially for large relative amplitudes of order unity 
Eq ~\eqref{eq:acceleration} predicts that $A_0/g\sim \triangle n/n_0$ for small 
amplitudes $|\triangle n/n_0| < 1$ and $A_0 \sim g $ for very large amplitudes $\triangle n /n_0 \gg 1$, 
which confirms the predictions in~\cite{Pecseli2016} and reproduces the limits discussed in~\cite{Angus2014} 

As pointed out earlier for compressible flows Eq ~\eqref{eq:inequality} can be further estimated
\begin{align}
  (MV)^2  \leq 4 T_eS(0)^2/m_i  
  \label{}
\end{align}
We therefore have a restriction on the maximum COM velocity for compressible flows, which is absent for incompressible flows
\begin{align}
  \frac{\max |V|}{\ensuremath{C_\mathrm{s}}} = {\mathcal Q}\frac{2S(0)}{M} \approx \frac{\mathcal Q}{2} \frac{|\triangle n| }{n_0+2/9 \triangle n } \approx \frac{\mathcal Q}{2} \frac{|\triangle n|}{n_0} 
  \label{eq:linear}
\end{align}
For $|\triangle n /n_0|< 1$ Eq ~\eqref{eq:linear} reduces to the linear scaling derived in~\cite{Kube2016}  
Finally, a scale analysis of Eq ~\eqref{eq:vorticity} shows that~\cite{Ott1978, Garcia2005, Held2016a}
\begin{align}
  \frac{\max |V|}{\ensuremath{C_\mathrm{s}}} = \mathcal R \left( \frac{\ell}{R_0}\frac{|\triangle n|}{n_0} \right)^{1/2} 
  \label{eq:sqrt}
\end{align}
This equation predicts a square root dependence of the center of mass velocity 
on amplitude and size  





We now propose a simple phenomenological model that captures the essential dynamics
of blobs and depletions in the previously stated systems  More specifically 
the model reproduces the acceleration Eq ~\eqref{eq:acceleration} with and without
Boussinesq approximation, the square root scaling for the COM velocity 
Eq ~\eqref{eq:sqrt} for incompressible flows as well as the relation between the 
square root scaling Eq ~\eqref{eq:sqrt} and the linear scaling 
Eq ~\eqref{eq:linear} for compressible flows  
The basic idea is that the COM of blobs behaves like 
the one of an infinitely long plasma column immersed in an ambient plasma  
The dynamics of this column reduces to the one of a two-dimensional ball 
This idea is similar to the analytical ``top hat'' density solution for
blob dynamics recently studied in~\cite{Pecseli2016} 
The ball is subject to buoyancy as well as linear and nonlinear friction
\begin{align}
  M_{\text{i}} \frac{d V}{d t} = (M_{\text{g}} - M_\text{p}) g - c_1 V  - \mathrm{sgn}(V ) \frac{1}{2}c_2 V^2 
  \label{eq:ball}
\end{align}
The gravity $g$ has a positive sign in the coordinate system; sgn$(f)$ is the sign function  
The first term on the right hand side is the buoyancy, where 
$M_{\text{g}} := \pi \ell^2 (n_0 + \mathcal Q \triangle n/2)$ 
is the gravitational mass of the ball with radius $\ell$ and 
$M_\mathrm{p} := n_0 \pi \ell^2 $ 
is the mass of the displaced ambient plasma 
Note that if $\triangle n<0$ the ball represents a depletion and the buoyancy term has a negative sign, i e  the depletion will rise  
We introduce an inertial mass 
$M_{\text{i}} := \pi\ell^2 (n_0 +2\triangle n/9)$ 
different from the gravitational mass $M_{\text{g}}$ in order to 
recover the initial acceleration in Eq ~\eqref{eq:acceleration}  
We interpret the parameters $\mathcal Q$ and $2/9$ as geometrical factors 
that capture the difference of the actual blob form from the idealized
``top hat'' solution  
Also note that the Boussinesq approximation appears in the model as a neglect of inertia, $M_{\text{i}} = \pi\ell^2n_0$ 

The second term is the linear friction term with coefficient $c_1(\ell)$, which
depends on the size of the ball 
If we disregard the nonlinear friction, $c_2=0$, Eq ~\eqref{eq:ball} directly yields a 
maximum velocity $c_1V^*=\pi \ell^2 n g \mathcal Q\triangle n/2$ 
From our previous considerations $\max V/\ensuremath{C_\mathrm{s}}=\mathcal Q \triangle n /2n_0$, we thus identify 
\begin{align}
  c_1 = \pi\ell^2 n_0 g/\ensuremath{C_\mathrm{s}}  
  \label{}
\end{align}
The linear friction coefficient thus depends on the gravity and the size of the
ball  

The last term in \eqref{eq:ball} is the nonlinear friction  The sign of the force depends on whether
the ball rises or falls in the ambient plasma  
If we disregard linear friction $c_1=0$, we have the maximum velocity 
$V^*= \sigma(\triangle n)\sqrt{\pi \ell^2|\triangle n| g\mathcal Q/c_2}$, 
which must equal 
$\max V= \sigma(\triangle n) \mathcal R \sqrt{g \ell |\triangle n/n_0|}$ 
and thus
\begin{align}
  c_2 = {\mathcal Q\pi n_0\ell }/{\mathcal R^2} 
  \label{}
\end{align}
Inserting $c_1$ and $c_2$ into Eq ~\eqref{eq:ball}
we can derive the maximum absolute velocity in the form 
\begin{align}
  \frac{\max |V|}{\ensuremath{C_\mathrm{s}}} = 
        \left(\frac{\mathcal R^2}{\mathcal Q}\right) \frac{\ell}{R_0} \left( 
        \left({1+\left( \frac{\mathcal Q}{\mathcal R} \right)^{2} \frac{|\triangle n|/n_0 }{\ell/R_0}}\right)^{1/2}-1 \right)
  \label{eq:vmax_theo}
\end{align}
and thus have a concise expression for $\max |V|$ that captures both the linear
scaling \eqref{eq:linear} as well as the square root scaling \eqref{eq:sqrt} 
With Eq ~\eqref{eq:acceleration} and Eq ~\eqref{eq:sqrt} respectively Eq ~\eqref{eq:vmax_theo} we 
finally arrive at an analytical expression for the time at which the maximum velocity is reached via 
$t_{\max V} \sim \max V/A_0$  Its inverse $\gamma:=t_{\max V}^{-1}$ gives the
global interchange growth rate, for which an empirical expression was
presented in Reference~\cite{Held2016a} 


We use the open source library FELTOR 
to simulate 
Eqs ~\eqref{eq:generala} and \eqref{eq:vorticity} with and without 
drift compression 
For numerical stabilty we added small diffusive terms on the right hand 
sides of the equations 
The discontinuous Galerkin methods employ three polynomial coefficients and a minimum of $N_x=N_y=768$ grid cells  The box size is $50\ell$ in order to mitigate 
influences of the finite box size on the blob dynamics  
Moreover, we used the invariants in Eqs  \eqref{eq:energya} and \eqref{eq:energyb} as consistency tests to verify the code and repeated simulations 
also in a gyrofluid model  
No differences to the results presented here were found  
Initial perturbations on the particle density field are given by Eq ~\eqref{eq:inita},
where the perturbation amplitude $\triangle n/n_0$ was chosen between $10^{-3}$ and $20$ for blobs and $-10^0$ and $ -10^{-3}$ for depletions  
Due to computational reasons we show results only for $\triangle n/n_0\leq 20$  


For compressible flows we consider two different cases $\ell/R_0 = 10^{-2}$ and
$\ell /R_0 = 10^{-3}$  
 For incompressible flows Eq ~\eqref{eq:generala} and \eqref{eq:vorticity}
 can be normalized such that the blob radius is absent from the equations~\cite{Ott1978, Kube2012}  
 The simulations of incompressible flows can thus be used for both sizes  
The numerical code as well as input parameters and output data can be found 
in the supplemental dataset to this contribution~\cite{Data2017} 

\begin{figure}[htb]
    \includegraphics[width=\columnwidth]{com_blobs}
    \caption{
      The maximum radial COM velocities of blobs for compressible and incompressible flows are shown  
      The continuous lines show Eq ~\eqref{eq:vmax_theo} while the 
      dashed line shows the square root scaling Eq ~\eqref{eq:sqrt} with 
      $\mathcal Q = 0 32$ and $\mathcal R=0 85$ 
    }
    \label{fig:com_blobs}
\end{figure}
In Fig ~\ref{fig:com_blobs} we plot the maximum COM velocity for blobs 
with and without drift compression 
For incompressible flows blobs follow the square root scaling almost 
perfectly  Only at very large amplitudes velocities are slightly below
the predicted values  
For small amplitudes we observe that the compressible blobs follow
a linear scaling  When the amplitudes increase there is a transition to the
square root scaling at around $\triangle n/n_0 \simeq 0 5$ for 
$\ell/R_0=10^{-2}$ and $\triangle n/n_0 \simeq 0 05$ for $\ell/R_0=10^{-3}$, which is consistent with Eq ~\eqref{eq:vmax_theo} and Reference~\cite{Kube2016}  
In the transition regions the simulated velocities are slightly larger than the predicted ones from Eq ~\eqref{eq:vmax_theo} 
Beyond these amplitudes
the velocities of compressible and incompressible blobs align  

\begin{figure}[htb]
    \includegraphics[width=\columnwidth]{com_holes}
    \caption{
      The maximum radial COM velocities of depletions for compressible and incompressible flows are shown  
      The continuous lines show Eq ~\eqref{eq:vmax_theo} while the 
      dashed line shows the square root scaling Eq ~\eqref{eq:sqrt} with 
      $\mathcal Q = 0 32$ and $\mathcal R=0 85$ 
      Note that small amplitudes are on the right and amplitudes close to unity are on the left side 
  }
    \label{fig:com_depletions}
\end{figure}
In Fig ~\ref{fig:com_depletions} we show the maximum radial COM velocity 
for depletions instead of blobs 
For relative amplitudes below $|\triangle n|/n_0 \simeq 0 5$ (right of unity in the plot) the velocities
coincide with the corresponding blob velocities in Fig ~\ref{fig:com_blobs}  
 For amplitudes larger than $|\triangle n|/n_0\simeq 0 5$ the 
velocities follow the square root scaling 
We observe that for plasma depletions beyond $90$ percent the velocities 
in both systems reach a constant value that is very well predicted by the
square root scaling  

\begin{figure}[htb]
    \includegraphics[width=\columnwidth]{acc_blobs}
    \caption{
      Average acceleration of blobs for compressible and incompressible flows are shown 
      The continuous line shows the acceleration in Eq ~\eqref{eq:acceleration} 
      with $\mathcal Q=0 32$
      while the dashed line is a linear reference line, which corresponds to the Boussinesq approximation  
  }
    \label{fig:acc_blobs}
\end{figure}
In Fig ~\ref{fig:acc_blobs} we show the average acceleration of blobs 
for compressible and incompressible flows computed
by dividing the maximum velocity $\max V$ by the time  
to reach this velocity $t_{\max V}$  
We compare the simulation results
to the theoretical predictions Eq ~\eqref{eq:acceleration} of our model with and without inertia  
The results of the compressible and incompressible systems coincide and fit very
well to our theoretical values  
For amplitudes larger than unity the acceleration deviates significantly from the prediction with Boussinesq approximation 

\begin{figure}[htb]
    \includegraphics[width=\columnwidth]{acc_holes}
    \caption{
      Average acceleration of depletions for compressible and incompressible flows are shown 
      The continuous line shows the acceleration in Eq ~\eqref{eq:acceleration} 
      with $\mathcal Q=0 32$
      while the dashed line is a linear reference line, which corresponds to the Boussinesq approximation  
    }
    \label{fig:acc_depletions}
\end{figure}
In Fig ~\ref{fig:acc_depletions} we show the simulated acceleration of depletions in the
compressible and the incompressible systems  We compare the simulation results
to the theoretical predictions Eq ~\eqref{eq:acceleration} of our model with and without inertia 
Deviations from our theoretical prediction Eq ~\eqref{eq:acceleration} are visible for amplitudes smaller than $\triangle n/n_0 \simeq -0 5$ (left of unity in the plot)  The relative deviations are small at around $20$ percent  
As in Fig ~\ref{fig:com_depletions} the acceleration reaches a constant values
for plasma depletions of more than $90$ percent 
Comparing Fig ~\ref{fig:acc_depletions} to Fig ~\ref{fig:acc_blobs} the asymmetry between blobs and depletions becomes 
apparent  While the acceleration of blobs is reduced for large 
amplitudes compared to a linear dependence the acceleration 
of depletions is increased  In the language of our simple buoyancy 
model the inertia of depletions is reduced but increased for blobs  



In conclusion  
  we discuss the dynamics of seeded blobs and depletions in a 
  compressible and an incompressible system 
  With only two fit parameters our theoretical results reproduce the 
  numerical COM velocities and accelerations over five orders of magnitude 
  We derive the amplitude dependence of the acceleration of blobs and depletions from 
  the conservation laws of our systems in Eq ~\eqref{eq:acceleration}  
  From the same inequality a linear regime is derived in the compressible system for 
  ratios of amplitudes to sizes smaller than a critical value 
   In this regime 
  the blob and depletion velocity depends linearly on the initial amplitude and 
  is independent of size  The regime is absent from the system with incompressible flows 
  Our theoretical results are verified by numerical simulations for all 
  amplitudes that are relevant in magnetic fusion devices 
  Finally, we suggest a new empirical blob model that captures the detailed dynamics of more complicated models  
  The Boussinesq approximation is clarified as the absence of inertia and a thus altered acceleration of blobs and depletions 
  The maximum blob velocity is not altered by the Boussinesq approximation 

The authors were supported with financial subvention from the Research Council of Norway under grant
240510/F20  M W  and M H  were supported by the Austrian Science Fund (FWF) Y398   The computational
results presented have been achieved in part using the Vienna Scientific Cluster (VSC)  Part of this work was performed on the Abel Cluster, owned by the University of Oslo and the Norwegian metacenter
for High Performance Computing (NOTUR), and operated by the Department for Research Computing at USIT,
the University of Oslo IT-department 
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 under grant agreement No 633053  The views and opinions expressed herein do not necessarily reflect those of the European Commission 



ground_truth: O(t, L_{\parallel}; S_\Delta) = L_{\parallel}^{-\beta/[\nu(1+\Delta)]} \tilde f_O(t/L_{\parallel}^{z/(1+\Delta)}; S_\Delta).

prompt_front: Now, answer the following question based on the text below, only give me the answer and do not output any other words.

Question: What is the relationship between the maximum velocity and the amplitude of the blob or depletion?

Read the following text and answer briefly.

Context 4:  On May 7, 1998, former SEC Chairman Arthur Levitt joined Rubin and Greenspan in objecting to the issuance of the CFTC's concept release  Their response dismissed Born's analysis and focused on the hypothetical possibility that CFTC regulation of swaps and other OTC derivative instruments could create a "legal uncertainty" regarding such financial instruments,  hypothetically reducing the value of the instruments  They argued that the imposition of regulatory costs would "stifle financial innovation" and encourage financial capital to transfer its  transactions offshore  The disagreement between Born and the Executive Office's top economic policy advisors has been described not only as a classic Washington turf war, but also a war of ideologies,  insofar as it is possible to argue that Born's actions were consistent with Keynesian and neoclassical economics while Greenspan, Rubin, Levitt, and Summers consistently espoused neoliberal, and neoconservative policies 

In 1998, a trillion-dollar hedge fund called Long Term Capital Management (LTCM) was near collapse   Using mathematical models to calculate debt risk, LTCM used derivatives to leverage $5 billion into more than $1 trillion, doing business with fifteen of Wall Street's largest financial institutions   The derivative transactions were not regulated, nor were investors able to evaluate LTCM's exposures   Born stated, "I thought that LTCM was exactly what I had been worried about"   In the last weekend of September 1998, the President's working group was told that the entire American economy hung in the balance   After intervention by the Federal Reserve, the crisis was averted   In congressional hearings into the crisis, Greenspan acknowledged that language had been introduced into an agriculture bill that would prevent CFTC from regulating the derivatives which were at the center of the crisis that threatened the US economy   U S  Representative Maurice Hinchey (D-NY) asked "How many more failures do you think we'd have to have before some regulation in this area might be appropriate?"  In response, Greenspan brushed aside the substance of Born's warnings with the simple assertion that "the degree of supervision of regulation of the over-the-counter derivatives market is quite adequate to maintain a degree of stability in the system"  Born's warning was that there wasn't any regulation of them   Born's chief of staff, Michael Greenberger summed up Greenspan's position this way: "Greenspan didn't believe that fraud was something that needed to be enforced, and he assumed she probably did  And of course, she did "  Under heavy pressure from the financial lobby, legislation prohibiting regulation of derivatives by Born's agency was passed by the Congress   Born resigned on June 1, 1999 

The derivatives market continued to grow yearly throughout both terms of George W  Bush's administration  On September 15, 2008, the bankruptcy of Lehman Brothers forced a broad recognition of a financial crisis in both the US and world capital markets   As Lehman Brothers' failure temporarily reduced financial capital's confidence, a number of newspaper articles and television programs suggested that the failure's possible causes included the conflict between the CFTC and the other regulators Faiola, Anthony, Nakashima, Ellen and Drew, Jill  The Crash: Risk and Regulation - What Went Wrong, The Washington Post, October 15, 2008 

Born declined to publicly comment on the unfolding 2008 crisis until March 2009, when she said: "The market grew so enormously, with so little oversight and regulation, that it made the financial crisis much deeper and more pervasive than it otherwise would have been " She also lamented the influence of Wall Street lobbyists on the process and the refusal of regulators to discuss even modest reforms 

An October 2009 Frontline documentary titled "The Warning"  described Born's thwarted efforts to regulate and bring transparency to the derivatives market, and the continuing opposition thereto  The program concluded with an excerpted interview with Born sounding another warning: "I think we will have continuing danger from these markets and that we will have repeats of the financial crisis -- may differ in details but there will be significant financial downturns and disasters attributed to this regulatory gap, over and over, until we learn from experience "

In 2009 Born, along with Sheila Bair of the FDIC, was awarded the John F  Kennedy Profiles in Courage Award in recognition of the "political courage she demonstrated in sounding early warnings about conditions that contributed" to the 2007-08 financial crisis   According to Caroline Kennedy, "Brooksley Born recognized that the financial security of all Americans was being put at risk by the greed, negligence and opposition of  powerful and well connected interests     The catastrophic financial events of recent months have  proved them [Born and Sheila Bair] right "  One member of the President's working group had a change of heart about Brooksley Born   SEC Chairman Arthur Levitt stated "I've come to know her as one of the most capable, dedicated, intelligent and committed public servants that I have ever come to know", adding that "I could have done much better  I could have made a difference" in response to her warnings 

In 2010, a documentary film Inside Job further alleged that derivatives regulation was ineffective from the Clinton administration on  Along with fellow whistleblower, former IMF Chief Economist Raghuram Rajan, who was also scorned by the economic establishment, Brooksley Born was cited as one of the authorities arguing that financial derivatives increase economic risk 

 Personal life 
Born is married to Alexander E  Bennett (also retired from Arnold & Porter)   She has five adult children - two from a previous marriage to Jacob Landau and three stepchildren  Notably, Born was named a partner at Arnold & Porter while working part-time so she could raise her two young children   When both of her children were school-age, Born returned to practice full-time 

References

External links
Attorney profile at Arnold & Porter
Brooksley Born (2009 Winner) of the Profiles in Courage Award, with acceptance speech transcript and NECN video

Profile at MarketsWiki
Speeches and statements
"Testimony Of Brooksley Born Chairperson of the CFTC Concerning The Over-The-Counter Derivatives Market", before the House Committee On Banking And Financial Services, July 24, 1998 
"The Lessons of Long Term Capital Management L P ", Remarks of Brooksley Born, Chairperson of the CFTC, Chicago-Kent-IIT Commodities Law Institute, Chicago, Illinois, October 15, 1998 
 Interview: Brooksley Born for "PBS Frontline: The Warning", PBS, (streaming VIDEO 1 hour), October 20, 2009 
Articles
Manuel Roig-Franzia  "Credit Crisis Cassandra:Brooksley Born's Unheeded Warning Is a Rueful Echo 10 Years On", The Washington Post, May 26, 2009
 Taibbi, Matt  "The Great American Bubble Machine", Rolling Stone'', July 9–23, 2009

1940 births
American women lawyers
Arnold & Porter people
Clinton administration personnel
Columbus School of Law faculty
Commodity Futures Trading Commission personnel
Heads of United States federal agencies
Lawyers from San Francisco
Living people
Stanford Law School alumni
21st-century American women
Stanford University alumni 



ground_truth: The maximum velocity scales with the square root of the amplitude.