prompt_front: Now, answer the following question based on the text below, only give me the answer and do not output any other words.

Question: Can the denoiser be applied to circuits with non-Clifford noise?

Read the following text and answer briefly.

Context 1: Paper Info

Title: Compressed quantum error mitigation
Publish Date: 10 May 2023
Author List: Maurits Tepaske (from Physikalisches Institut, Universität Bonn), David Luitz (from Physikalisches Institut, Universität Bonn)

Figure

FIG 3 The out-of-time-ordered correlator C otoc i=L/2,j (t) as a function of the operator position j and time t, for the infinite temperature initial state, for a denoised second-order Trotter supercircuit with Trotter depth Mtrot = 32 and denoiser depth M = 2 We consider evolution times t = 0 5, 1,    , 5, for the periodic L = 14 Heisenberg chain that is affected by two-qubit depolarizing noise with p = 0 01 
FIG  4  The complex eigenvalues λ of the noisy second-order Trotter supercircuit with Mtrot = 16 at time t = 1 (left), the corresponding optimized denoiser with M = 4 (center), and the denoised Trotter supercircuit (right) The Trotter circuit is for a L = 6 Heisenberg model with PBC, and all twoqubit channels are affected by depolarizing noise with p = 0 0046 The unit circle, on which unitary eigenvalues must lie, is shown in black, and the noiseless eigenvalues are shown as blue bars It is evident that the denoiser recovers all the noiseless eigenvalues from the noisy circuit 
FIG  2  The complex eigenvalues λ of the noisy second-order Trotter supercircuit with Mtrot = 16 at time t = 1 (left), the corresponding optimized denoiser with M = 4 (center), and the denoised Trotter supercircuit (right) The Trotter circuit is for a L = 6 Heisenberg model with PBC, and all twoqubit channels are affected by depolarizing noise with p = 0 036 The unit circle, on which unitary eigenvalues must lie, is shown in black, and the noiseless eigenvalues are shown as blue bars It is clear that the denoiser recovers with high accuracy the noiseless eigenvalues from the noisy circuit 
FIG  3  The half-chain channel entanglement entropy S at different two-qubit depolarizing noise strengths p, for a secondorder Trotter supercircuit with Mtrot = 16 and t = 2, for a M = 4 denoiser The Trotter circuit is for a Heisenberg model with PBC of size L = 6 The different curves correspond to the different supercircuits, i e  the noisy supercircuit, the denoiser, the corresponding denoised supercircuit, and the noiseless variant 
FIG  4  The out-of-time-ordered correlator C otoc i=L/2,j (t) as a function of the operator position j and stacked time t, for the infinite temperature initial state, for a denoised secondorder Trotter supercircuit with Trotter depth Mtrot = 32 and denoiser depth M = 2 It is optimized at t = 2 and stacked up to ten times The calculations are for the periodic L = 14 Heisenberg chain that is affected by two-qubit depolarization with p = 0 01 The denoiser is affected by the same noise 
FIG 6 The distribution of the ZZ angle α of M = 2 denoisers (top panels) and M = 8 denoisers (bottom panels), with the lightest color corresponding to the denoiser for the Trotter supercircuit with t = 0 5, and the darkest color with t = 5 As usual, we consider the Heisenberg model on a periodic chain, and second-order Trotter supercircuits with depths Mtrot = 8, 16, 32, 64, which together with the denoiser is affected by a two-qubit depolarizing noise with p = 0 01 The panels are arranged as Mtrot = 8, 16, 32, 64 for top left, top right, bottom left, bottom right, respectively 
FIG  7  The sampling overhead γ of the optimized denoisers from Fig  2 of the main text, with denoiser depths M = 1, 2, 4, 6, 8 and Trotter depths Mtrot = 8, 16, 32, 64 at times t = 0 5, 1,    , 5, for the Heisenberg model on a chain with PBC affected by two-qubit depolarizing noise with p = 0 01 The panels are arranged as Mtrot = 8, 16, 32, 64 for top left, top right, bottom left, bottom right, respectively 
FIG 8 The domain wall magnetization Z dw after evolving a periodic density wall |dw |dw * with the denoised second-order Trotter supercircuits D C from Fig 2of the main text These supercircuits have various Trotter depths Mtrot = 8, 16, 32, 64, denoiser depths M = 1, 2, 4, 6, 8, and evolution times t = 0 5, 1,    , 5, for the periodic L = 14 Heisenberg chain that is affected by two-qubit depolarizing noise of strength p = 0 01 The denoiser is affected by the same noise The non-denoised results are labelled with M = 0 and the noiseless results with p = 0 The panels are arranged as Mtrot = 8, 16, 32, 64 for top left, top right, bottom left, bottom right, respectively We see that the denoiser allows us to recover the noiseless behavior 

abstract

We introduce a quantum error mitigation technique based on probabilistic error cancellation to eliminate errors which have accumulated during the application of a quantum circuit  Our approach is based on applying an optimal "denoiser" after the action of a noisy circuit and can be performed with an arbitrary number of extra gates 
The denoiser is given by an ensemble of circuits distributed with a quasiprobability distribution  For a simple noise model, we show that efficient, local denoisers can be found, and we demonstrate their effectiveness for the digital quantum simulation of the time evolution of simple spin chains  Introduction 
-Quantum information processing has been theoretically shown to hold great promises, and quantum algorithms were developed which can in principle achieve an exponential speed-up over their classical counterparts, both for general purpose computing and quantum simulation   However, present day quantum computing prototypes still suffer from significant noise processes which hinder the execution of many potentially groundbreaking quantum algorithms  
Nontrivial quantum algorithms typically require large sequences of quantum gates, each of which introduces dissipation and hence an overall loss of coherence, eventually rendering the results useless  Until quantum error correction becomes practical, quantum error mitigation seems to be more feasible to increase the accuracy of expectation values 
Here the goal is to induce the (partial) cancellation of errors that stem from noisy quantum gates by extending the circuit corresponding to the desired algorithm with an ensemble of gates , sampled from a quasiprobability distribution  The traditional way to accomplish this is with the gatewise method from , where noise is mitigated by inverting the noise channel of each gate separately, i e  the cancellation of errors is performed for each gate on its own 
Here the local noise channel is approximated in a way such that it can be easily inverted analytically, e g  using Pauli twirling   Gates are then sampled from the inverted noise channel by interpreting it as a quasiprobability distribution  Because in this gate-wise approach every noisy gate has to be modified separately, the sign problem is exponentially large in the number of gates, limiting the practicality of the mitigation 
The success of the gate-wise approach resulted in a large body of work concerning these methods , including extensions for simultaneous mitigation of multiple gates by Pauli-twirling entire layers or variationally constructing a mitigating matrix product operator   In principle, errors during the execution of a circuit can propagate and accumulate 
These propagated errors * david luitz@uni-bonn de ≈ C

C

FIG  1  An example of the quantum error mitigation procedure used in this work for the time evolution of the wave function of a spin chain  The ideal second-order Trotter supercircuit C of depth Mtrot = 1 (light blue) is approximated by applying a denoiser D of depth M = 1 (red) to the noisy Trotter supercircuit C (dark blue) 
Because the denoiser is applied after fully executing the noisy Trotter supercircuit, it represents an approximate inverse of the global noise channel with a precision tunable by the depth of the denoiser  can potentially blow up and lead to large errors for the circuit as a whole   Here we introduce a mitigation technique that takes into account the propagation of errors, can be performed with a tunable number of extra gates, and works for non-Clifford local noise channels since the inversion of the accumulated global noise channel is implicit 
We first execute the targeted noisy circuit completely, letting the noise propagate and accumulate, and only afterwards we apply an extra random circuit sampled from a quasiprobability distribution  We call the corresponding ensemble of random circuits a denoiser, and we construct it such that upon averaging the accumulated errors cancel 
Essentially, the denoiser inverts a global noise channel  Since we will construct it as a local brickwall circuit, following the classical preprocessing approach from , we call this compressed quantum error mitigation  Method  -Due to the inevitable coupling of a quantum processor to its environment, every qubit operation is affected by noise 
Therefore, the simplest technique to minimize the impact of the resulting noise is to minimize the number of operations when performing a quantum algorithm  In we showed that many-body time evolution operators can be efficiently compressed into brick-wall circuits with high fidelity per gate  In this Letter, we consider the noise explicitly by treating quantum operations as (generally non-unitary) quantum channels, corresponding to completely positive and trace preserving (CPTP) maps  
For example, instead of a noiseless two-qubit gate G, which acts on a quantum state |ρ in superoperator form as G|ρ = G⊗G * |ρ , we get the noisy channel G = N G, where the noise channel N implements the two-qubit noise   These channels are used to construct a "supercircuit" C = N G i=1 Gi , consisting of N G channels, which is affected by multi-qubit accumulated noise 
This supercircuit encodes an ensemble of circuits   For simplicity, we assume that the noisy channels Gi in each half brickwall layer are lattice inversion and translation invariant, such that we can construct a denoiser with these properties, limiting the number of variational parameters  The purpose of quantum error mitigation is to modify the ensemble of circuits described by C in a way that we can use it to obtain the noiseless expectation values 
In superoperator language, we do this by following the supercircuit C with a denoiser supercircuit D, such that D C is as close to the noiseless supercircuit C = C ⊗ C * as possible  Here C is the target unitary circuit  Because the noise channel N is non-unitary, hence making the supercircuit C non-unitary, we need to use a non-unitary denoiser to retrieve the unitary C 
We illustrate the mitigation procedure in Fig  , where a denoiser with one layer is used to mitigate errors for a second-order Trotter supercircuit with one layer  This circuit architecture is commonly used to simulate the time evolution of a quantum many-body system, until some time t, with controllable precision , and we will use it to benchmark the denoiser 
In practice, we cannot directly implement a supercircuit, and so we have to utilize its interpretation as an ensemble of circuits  Essentially, after executing a shot of the noisy circuit we sample the denoiser and apply it  The goal is to construct the denoiser in a way that averaging over many of its samples cancels the accumulated errors and gives us a good approximation of the noiseless expectation values 
It should be noted that our approach requires more gate applications on the quantum processor than with the gate-wise scheme, since there each sample from the mitigation quasiprobability distribution can be absorbed into the original circuit, whereas our approach increases the circuit depth  We take this into account by imposing the same noise on the denoiser 
Furthermore, within our scheme, the dimensionality of the quasiprobabilistic mitigating ensemble can be controlled, in contrast to the gate-wise approach where it is equal to the gate count  To facilitate the stochastic interpretation we parameterize each two-qubit denoiser channel G i as a sum of CPTP maps, such that we can sample the terms in this sum and execute the sampled gate on the quantum processor 
Concretely, we use a trace preserv-ing sum of a unitary and a non-unitary channel  For the unitary part we take a two-qubit unitary channel U( φ i ) = U ( φ i ) ⊗ U * ( φ i ), with U ( φ i ) a two-qubit unitary gate parameterized by φ i   For this we take the two-qubit ZZ rotation exp(−iα(σ z ⊗ σ z )) with angle α, which can be obtained from native gates on current hardware , and dress it with four general one-qubit unitaries, only two of which are independent if we want a circuit that is space inversion symmetric around every bond 
The resulting gate has 7 real parameters φ i   For the non-unitary part, which is essential because D has to cancel the non-unitary accumulated noise to obtain the noiseless unitary circuit, we use a general onequbit measurement followed by conditional preparation channel M( , with V a general one-qubit unitary and each κ i a 3-dimensional vector, resulting in a real 9-dimensional ζ i  
This yields the two-qubit correlated measurement M( With these parts we construct the parameterization with coefficients η i ∈ R that satisfy η 0 + η 1 = 1 because G i is trace preserving  Note that here the tensor product symbol corresponds to combining two one-qubit channels to make a two-qubit channel, whereas in most of the paper it is used to link the column and row indices of a density matrix 
We construct the denoiser from the noisy channels Gi = N G i   With this parameterization one denoiser channel has 17 independent real parameters, such that a denoiser of depth M , i e  consisting of M brickwall layers, has 34M real parameters (we use one unique channel per half brickwall layer)  For reference, a general channel has 544M parameters 
To determine the mitigated expectation values we use the full expression where |ρ 0 is the initial state and |1 is the vectorized identity operator on the full Hilbert space  To evaluate this on a quantum processor, we use the stochastic interpretation of (1) to resample   In particular, from each channel (1) we get a unitary with probability p 0 = |η 0 |/γ and a measurement followed by conditional preparation with probability p 1 = |η 1 |/γ 
Here γ = |η 0 | + |η 1 | is the sampling overhead, which characterizes the magnitude of the sign problem from negative η i   For quasiprobability distributions, i e  with γ > 1, every denoiser sample has an extra sign sgn(η) = N G g=1 sgn(η g ), 2  The normalized distance between the denoised Trotter supercircuit D C and the noiseless Trotter supercircuit C (top panels), at evolution times t = 0 5, 1,    , 5, and the twopoint z-spin correlator C zz i=L/2,j=L/2 (t) of a spin on the middle site at times 0 and t (bottom panels), for the infinite temperature initial state 
We consider denoisers with depths M = 1, 2, 4, 6, 8 and second-order Trotter circuits with depths Mtrot = 16, 32, 64  In the top panels we use a Heisenberg chain with L = 8, and in the bottom panels with L = 14, both with periodic boundary conditions  All gates are affected by two-qubit depolarizing noise with p = 0 01 
The non-denoised results are labelled with M = 0, and the noiseless values with p = 0  where sgn(η g ) is the sign of the sampled coefficient of the gth channel  γ = 1 means that all signs are positive  Observables Ô p=0 for the noiseless circuit are then approximated by resampling the observables from the denoiser ensemble
where γ = N G g=1 γ g is the overall sampling overhead, with γ g the overhead of the gth gate  Clearly, a large γ implies a large variance of Ô p=0 for a given number of samples, with accurate estimation requiring the cancellation of large signed terms  The number of samples required to resolve this cancellation of signs is bounded by Hoeffding's inequality, which states that a sufficient number of samples to estimate Ô p=0 with error δ at probability 1 − ω is bounded by (2γ 2 /δ 2 ) ln(2/ω)  
Since γ scales exponentially in γ g , it is clear that a denoiser with large M and γ 1 will require many samples  We observed that decompositions with γ > 1 are crucial for an accurate denoiser  Restricting to γ = 1 leads to large infidelity and no improvement upon increasing the number of terms in or the depth M of the denoiser 
Simply put, probabilistic error cancellation of gate noise introduces a sign problem and it is crucial to find optimal parameterizations (1) which minimize γ to make the approach scalable  This issue arises in all high performance error mitigation schemes , because the inverse of a physical noise channel is unphysical and cannot be represented as a positive sum over CPTP maps 
This is clearly visible in the spectra of the denoiser, which lies outside the unit circle (cf  Fig  )  This makes the tunability of the number of gates in each denoiser sample a crucial ingredient, which allows control over the sign problem, because we can freely choose the η i in   For the parametrization (1) of denoiser channels, we try to find a set of parameters for error mitigation by minimizing the normalized Frobenius distance between the noiseless and denoised supercircuits
which bounds the distance of output density matrices and becomes zero for perfect denoising  We carry out the minimization of on a classical processor, using gradient descent with the differential programming algorithm from   Instead of explicitly calculating the accumulated global noise channel and subsequently inverting it, we approximate the noiseless supercircuit C with the denoised supercircuit D C, effectively yielding a circuit representation D of the inverse noise channel 
Results  -To benchmark the denoiser we apply it to the second-order Trotter circuits of the spin-1/2 Heisenberg chain with periodic boundary conditions (PBC) where is the Pauli algebra acting on the local Hilbert space of site i  A second-order Trotter circuit for evolution time t with depth M trot consists of M trot − 1 half brickwall layers with time step t/M trot and two layers with half time step  
We consider circuits that are affected by uniform depolarizing noise with probability p for simplicity, but our approach can be used for any non-Clifford noise  The two-qubit noise channel is which acts on neighboring qubits i and i + 1 and is applied to each Trotter and denoiser gate, and p = 0 01 unless stated otherwise 
We study circuits with depths M trot = 16, 32, 64 for evolution times t = 0 5, 1,    , 5, and denoisers D with depths M = 1, 2, 4, 6, 8  In the top panels of Fig  we show (4) for a chain of size L = 8 as a function of time t  Here it can be seen that even for M trot = 32 a denoiser with M = 1 already improves by roughly an order of magnitude at all considered t 
Depending on M trot and t, further increasing M lowers , with the biggest improvements occurring for high precision Trotter circuits with large depth M trot = 64 and short time t = 0 5, where the Trotter gates are closer to the identity than in the other cases  At the other extreme, for M trot = 16 the improvements are relatively small upon increasing M > 2  In all cases the denoiser works better at early times than at late times, again indicating that it is easier to denoise Trotter gates that are relatively close to the identity 
To probe the accuracy of the denoiser on quantities that do not enter the optimization, as a first test we consider the two-point correlator between spins at different times where we have chosen the infinite temperature initial state, and C(t) is the Trotter supercircuit for time t  In the bottom panels of Fig  we show C zz i=L/2,j=L/2 (t) for the supercircuits from the upper panels, now for a L = 14 chain 
Here we see that at M trot = 16 we can retrieve the noiseless values already with M = 1, but that increasing M trot makes this more difficult  At M trot = 64 we see larger deviations, and improvement upon increasing M is less stable, but nonetheless we are able to mitigate errors to a large extent  As a further test, we compute the out-of-time-ordered correlator (OTOC) ]
In Fig  we show the results for i = L/2, for a Trotter circuit with depth M trot = 32 and a denoiser with depth M = 2  Here we see that a denoiser with M M trot is able to recover the light-cone of correlations, which are otherwise buried by the noise  In the Supplementary Material we consider how the denoiser performs at different noise levels p, and how the denoised supercircuits perform under stacking 
There we also calculate domain wall magnetization dynamics, and show the distribution of the optimized denoiser parameters and the sampling overhead associated to the denoiser as a whole  In Fig  we show the eigenvalues of the noisy supercircuits for a noisy second-order Trotter supercircuit with M trot = 16 at t = 1 (left), the corresponding optimized denoiser with M = 4 (center), and the denoised supercircuit (right) 
The eigenvalues λ of a unitary supercircuit lie on the unit circle, and in the presence of dissipation they are pushed to the center  We see that the spectrum of the denoiser lies outside the unit circle, making it an unphysical channel which cures the effect of the noise on the circuit, such that the spectrum of the denoised circuit is pushed back to the unit circle 
The noiseless eigenvalues are shown as blue bars, making it clear that the denoiser is able to recover the noiseless eigenvalues from the noisy circuit  In the Supplementary Material we show the spectra for a p = 0 036 denoiser, where we observe a clustering of eigenvalues reminiscent of Refs    There we also investigate the channel entropy of the various supercircuits  
Conclusion  -We have introduced a probabilistic error cancellation scheme, where a classically determined denoiser mitigates the accumulated noise of a (generally non-Clifford) local noise channel  The required number of mitigation gates, i e  the dimensionality of the corresponding quasiprobability distribution, is tunable and the parameterization of the corresponding channels provides control over the sign problem that is inherent to probabilistic error cancellation 
We have shown that a denoiser with one layer can already significantly mitigate errors for second-order Trotter circuits with up to 64 layers  This effectiveness of low-depth compressed circuits for denoising, in contrast with the noiseless time evolution operator compression from , can be understood from the non-unitarity of the denoiser channels 
In particu-lar, measurements can have non-local effects, since the measurement of a single qubit can reduce some highly entangled state (e g  a GHZ state) to a product state, whereas in unitary circuits the spreading of correlations forms a light-cone  To optimize a denoiser with convenience at L > 8, the optimization can be formulated in terms of matrix product operators or channels , which is convenient because the circuit calculations leading to the normalized distance and its gradient are easily formulated in terms of tensor contractions and singular value decompositions  
This provides one route to a practical denoiser, which is relevant because the targeted noiseless circuit and the accompanying noisy variant in (4) need to be simulated classically, confining the optimization procedure to limited system sizes with an exact treatment or limited entanglement with tensor networks 
Nonetheless, we can use e g  matrix product operators to calculate (4) for some relatively small t, such that the noiseless and denoised supercircuits in (4) have relatively small entanglement, and then stack the final denoised supercircuit on a quantum processor to generate classically intractable states 
Analogously, we can optimize the channels exactly at some classically tractable size and then execute them on a quantum processor with larger size  Both approaches are limited by the light-cone of many-body correlations, as visualized in Fig  , because finite-size effects appear when the light-cone width becomes comparable with system size 
1  The normalized distance (left) and z spin correlator C zz i=L/2,j=L/2 (right), for a second-order Trotter supercircuit of depth Mtrot = 16 for time t = 1, affected by various twoqubit depolarizing errors p  We compare the values obtained with and without a denoiser, i e  M > 0 and M = 0, to the noiseless values (p = 0) 
The denoiser is affected by the same noise as the Trotter circuit  We consider denoisers with depths M = 1, 2, 4, 6, 8, and we use a L = 8 Heisenberg chain with PBC for the normalized distance, while for the correlator we use L = 14  * david luitz@uni-bonn de to observe that even for larger noise strength p, the local observable C zz improves significantly even with denoisers of depth M = 1 
For large noise strengths, we generally see that the optimization of the denoiser becomes difficult, leading to nonmonotonic behavior as a function of p, presumably because we do not find the global optimum of the denoiser  It is interesting to analyze the spectra of the supercircuits considered in this work 
As mentioned in the main text, the spectrum of the ideal, unitary supercircuit C lies on the unit circle  The comparison to this case is therefore instructive  In the main text, we showed an example of the spectra in Fig  for moderate noise strength  Here, we show additional data for stronger noise p = 0 036 in Fig  for a denoiser with M = 4 layers, optimized to mitigate errors for a second-order Trotter supercircuit with M trot = 16 layers at time t = 1 
The eigenvalues λ of the noisy supercircuit C are clustered close to zero, far away from the unit circle (except for λ = 1), showing that the circuit is strongly affected by the noise  To mitigate the impact of the noise, the denoiser consequently has to renormalize the spectrum strongly  If it accurately represents the inverse of the global noise channel, its spectrum has to lie far outside the unit circle, which is the case 
Interestingly, we observe a clustering of eigenvalues which is reminiscent to the spectra found in   By comparison to these works, we suspect that this is due to the local nature of the denoiser, and warrants further investigation  The right panel of Fig  shows the result of the denoiser, pushing the eigenvalues back to the unit circle, nearly with the exact same distribution along the circle as the noiseless eigenvalues (blue bars) 
Due to the strong noise, this is not achieved perfectly, and it is clear that this cannot work in principle if the global noise channel has a zero eigenvalue  The complexity of an operator can be quantified by its operator entanglement entropy   Here we calculate the half-chain channel entanglement entropy S of the noiseless C, noisy C, denoiser D, and denoised D C supercircuits 
We define S as the entanglement entropy of the state that is related to a supercircuit C via the Choi-Jamio lkowski isomorphism, i e  ψ C = χ C /N , where the process matrix χ ab,cd C = C ac,bd is simply a reshaped supercircuit and N ensures normalization  Then we have S = −Tr [ψ C ln ψ C ]  This entropy measure is a particular instance of the "exchange entropy", which characterizes the information exchange between a quantum system and its environment  
In Fig  we plot the various S for a second-order Trotter circuit with M trot = 16 at t = 2, for a denoiser with M = 4, both affected by two-qubit depolarizing noise with p ∈ [10 −3 , 10 −1 ]  The Trotter circuit is for a Heisenberg model with L = 6 and PBC  We see that at large p, the noise destroys entanglement in the noisy supercircuit, and that the denoiser S increases to correct for this, such that the denoised supercircuit recovers the noiseless S 
Here we investigate how denoised supercircuits perform upon repeated application  We optimize the denoiser for a Trotter supercircuit for a fixed evolution time t  Then, to reach later times, we stack the denoised supercircuit n times to approximate the evolution up to time nt: In Fig  we stack a denoised t = 1 supercircuit up to n = 20 times and calculate the correlation function, defined in the main text, for the middle site 
We consider Trotter depths M trot = 8, 16, 32, 64 and denoiser depths M = 1, 2, 4, 6, 8, for a L = 14 Heisenberg chain with p = 0 01 depolarizing two-qubit noise  The noisy results correspond to M = 0 and the noiseless results to p = 0  In Fig  we calculate the OTOC, defined in the main text, with stacked time evolution for a denoised t = 2 supercircuit with M trot = 32 and M = 2, stacked up to ten times 
We see that the stacked supercircuit performs very well, and the additional precision obtained by using deep denoisers (M = 8) pays off for long evolution times, where we see convergence to the exact result (black dashed lines in Fig  ) as a function of M   FIG    The two-point z-spin correlator C zz i=L/2,j=L/2 (t) of a spin on the middle site at times 0 and t, for the infinite temperature initial state, for denoised second-order Trotter supercircuits that are optimized at evolution time t = 1 and then stacked up to twenty times 
We use Trotter depths Mtrot = 8, 16, 32, 64 and denoiser depths M = 1, 2, 4, 6, 8  The calculations were performed for a periodic Heisenberg model with L = 14 and PBC, affected by two-qubit depolarizing noise with strength p = 0 01, which also affects the denoiser  The non-denoised results are labelled with M = 0, and the noiseless results with p = 0 
The panels are arranged as Mtrot = 8, 16, 32, 64 for top left, top right, bottom left, bottom right, respectively  The costliest and most noise-susceptible operation is the two-qubit ZZ rotation with angle α, which is the foundation of the unitary piece in our channel parameterization, defined in the main text 
For completeness, we here present the α angles of the optimized denoisers  The results are shown in Fig  , which contains histograms for the channel count N G versus α  The histograms are stacked, with the lightest color corresponding to the angles of the denoiser at t = 0 5 and the darkest at t = 5  The top four panels are for a denoiser with M = 2 and the bottom four with M = 8 
We consider M trot = 8, 16, 32, 64  We see that in both cases the distribution widens upon increasing M trot , indicating that the unitary channels start deviating more from the identity  Moreover, while the M = 2 denoisers in all cases except M trot = 64 have ZZ contributions close to the identity, this is clearly not the case for M = 8 
For simplicity, we did not focus on obtaining denoisers with the smallest sampling overhead γ, which is required to minimize the sign problem and hence ease the sampling of mitigated quantities  Instead, we let the optimization freely choose the η i in the denoiser parameterization, as defined in the main text 
In Fig  we show the sampling overhead of the denoisers from Fig  of the main text  We see that for M = 1 and M = 2 the sampling overhead is relatively small and uniform across the different t, whereas for M > 2 the optimization sometimes yields a denoiser with large γ and other times with small γ  This could be related to the difference in α distributions from Fig   
The large fluctuations of γ appears to stem from the difficulty in finding optimal deep denoisers, and our optimization procedure likely only finds a local minimum in these cases  Here C(t) is the Trotter supercircuit for time t  In Fig  we show Z dw for the circuits from Fig 
Context 3: \section{introduction}
In the past few years, the synthesis of ferromagnetic semiconductors has become a major challenge for spintronics  Actually, growing a magnetic and semiconducting material could lead to promising advances like spin injection into non magnetic semiconductors, or electrical manipulation of carrier induced magnetism in magnetic semiconductors \cite{ohno00,Bouk02}  Up to now, major efforts have focused on diluted magnetic semiconductors (DMS) in which the host semiconducting matrix is randomly substituted by transition metal (TM) ions such as Mn, Cr, Ni, Fe or Co \cite{Diet02}  However Curie temperatures ($T_{C}$) in DMS remain rather low and TM concentrations must be drastically raised in order to increase $T_{C}$ up to room temperature  That usually leads to phase separation and the formation of secondary phases  It was recently shown that phase separation induced by spinodal decomposition could lead to a significant increase of $T_{C}$ \cite{Diet06,Fuku06}  For semiconductors showing $T_{C}$ higher than room temperature one can foresee the fabrication of nanodevices such as memory nanodots, or nanochannels for spin injection  Therefore, the precise control of inhomogeneities appears as a new challenge which may open a way to industrial applications of ferromagnetism in semiconductors 

The increasing interest in group-IV magnetic semiconductors can also be explained by their potential compatibility with the existing silicon technology  In 2002, carrier mediated ferromagnetism was reported in  MBE grown Ge$_{0 94}$Mn$_{0 06}$ films by Park \textit{et al } \cite{Park02}  The maximum critical temperature was 116 K  Recently many publications indicate a significant increase of $T_{C}$ in Ge$_{1-x}$Mn$_{x}$ material depending on growth conditions \cite{Pint05,Li05,tsui03}  Cho \textit{et al } reported a Curie temperature as high as 285 K \cite{Cho02}  
Taking into account the strong tendency of Mn ions to form intermetallic compounds in germanium, a detailed investigation of the nanoscale structure is required  Up to now, only a few studies have focused on the nanoscale composition in Ge$_{1-x}$Mn$_{x}$ films  Local chemical inhomogeneities have been recently reported by Kang \textit{et al } \cite{Kang05} who evidenced a micrometer scale segregation of manganese in large Mn rich stripes  Ge$_3$Mn$_5$ as well as Ge$_8$Mn$_{11}$ clusters embedded in a germanium matrix have been reported by many authors  However, Curie temperatures never exceed 300 K \cite{Bihl06,Morr06,Pass06,Ahle06}  Ge$_3$Mn$_5$ clusters exhibit a Curie temperature of 296 K \cite{Mass90}  This phase frequently observed in Ge$_{1-x}$Mn$_{x}$ films is the most stable (Ge,Mn) alloy  The other stable compound Ge$_8$Mn$_{11}$ has also been observed in nanocrystallites surrounded with pure germanium \cite{Park01}  Ge$_8$Mn$_{11}$ and Ge$_3$Mn$_5$ phases are ferromagnetic but their metallic character considerably complicates their potential use as spin injectors 
Recently, some new Mn-rich nanostructures have been evidenced in Ge$_{1-x}$Mn$_{x}$ layers  Sugahara \textit{et al } \cite{Sugh05} reported the formation of high Mn content (between 10 \% and 20 \% of Mn) amorphous Ge$_{1-x}$Mn$_x$ precipitates  in a Mn-free germanium matrix  Mn-rich coherent cubic clusters were observed by Ahlers \textit{et al } \cite{Ahle06} which exhibit a Curie temperatures below 200 K  Finally, high-$T_{C}$ ($>$ 400 K) Mn-rich nanocolumns have been evidenced \cite{Jame06} which could lead to silicon compatible room temperature operational devices \\
In the present paper, we investigate the structural and magnetic properties of Ge$_{1-x}$Mn$_x$ thin films for low growth temperatures ($<$ 200$^{\circ}$C) and low Mn concentrations (between 1 \% and 11 \%)  By combining TEM, x-Ray diffraction and SQUID magnetometry, we could identify different magnetic phases  We show that depending on growth conditions, we obtain either Mn-rich nanocolumns or Ge$_{3}$Mn$_{5}$ clusters embedded in a germanium matrix  We discuss the structural and magnetic properties of these nanostructures as a function of manganese concentration and growth temperature  We also discuss the magnetic anisotropy of nanocolumns and  
Ge$_3$Mn$_5$ clusters  

\section{Sample growth}

Growth was performed using solid sources molecular beam epitaxy (MBE) by co-depositing Ge and Mn evaporated from standard Knudsen effusion cells   Deposition rate was low ($\approx$ 0 2 \AA s$^{-1}$)  Germanium substrates were epi-ready Ge(001) wafers with a residual n-type doping and resistivity of 10$^{15}$ cm$^{-3}$ and 5 $\Omega cm$ respectively  After thermal desorption of the surface oxide, a 40 nm thick Ge buffer layer was grown at 250$^{\circ}$C, resulting in a 2 $\times$ 1 surface reconstruction as observed by reflection high energy electron diffraction (RHEED) (see Fig  1a)  Next, 80 nm thick Ge$_{1-x}$Mn$_{x}$ films were subsequently grown  at low substrate temperature (from 80$^{\circ}$C to 200$^{\circ}$C)  Mn content has been determined by x-ray fluorescence measurements performed on thick samples ($\approx$ 1 $\mu m$ thick) and complementary Rutherford Back Scattering (RBS) on thin Ge$_{1-x}$Mn$_{x}$ films grown on silicon  Mn concentrations range from 1 \% to 11\% Mn 

For Ge$_{1-x}$Mn$_{x}$ films grown at substrate temperatures below 180$^{\circ}$C, after the first monolayer (ML) deposition, the  2 $\times$ 1 surface reconstruction almost totally disappears  After depositing few MLs, a slightly diffuse 1 $\times$ 1 streaky RHEED pattern and a very weak 2 $\times$ 1 reconstruction (Fig  1b) indicate a predominantly two-dimensional growth  For growth temperatures above 180$^{\circ}$C additional spots appear in the RHEED pattern during the Ge$_{1-x}$Mn$_{x}$ growth (Fig  1c)  These spots may correspond to the formation of very small secondary phase crystallites  The nature of these crystallites will be discussed below 

Transmission electron microscopy (TEM) observations were performed using a JEOL 4000EX microscope with an acceleration voltage of 400 kV  Energy filtered transmission electron microscopy (EFTEM) was done using a JEOL 3010 microscope equipped with a Gatan Image Filter   Sample preparation was carried out by standard mechanical polishing and argon ion milling for cross-section investigations and plane views were prepared by wet etching with H$_3$PO$_4$-H$_2$O$_2$ solution \cite{Kaga82} 

\begin{figure}[htb]
    \center
    \includegraphics[width= 29\linewidth]{ /fig1a eps}
    \includegraphics[width= 29\linewidth]{ /fig1b eps}
    \includegraphics[width= 29\linewidth]{ /fig1c eps}
    \caption{RHEED patterns recorded during the growth of Ge$_{1-x}$Mn$_{x}$ films: (a) 2 $\times$ 1 surface reconstruction of the germanium buffer layer  (b) 1 $\times$ 1 streaky RHEED pattern obtained at low growth temperatures ($T_g<$180$^{\circ}$C)  (c) RHEED pattern of a sample grown at $T_g=$180$^{\circ}$C  The additional spots reveal the presence of Ge$_3$Mn$_5$ clusters at the surface of the film }
\label{fig1}
\end{figure}

\section{Structural properties \label{structural}}

\begin{figure}[htb]
    \center
	\includegraphics[width= 49\linewidth]{ /fig2a eps}
	\includegraphics[width= 49\linewidth]{ /fig2b eps}
	 \includegraphics[width= 49\linewidth]{ /fig2c eps}
	 \includegraphics[width= 49\linewidth]{ /fig2d eps}
    \caption{Transmission electron micrographs of a Ge$_{1-x}$Mn$_{x}$ film grown at 130$^{\circ}$C and containing 6 \% of manganese  (a) cross-section along the [110] axis : we clearly see the presence of nanocolumns elongated along the growth axis  (b) High resolution image of the interface between the Ge$_{1-x}$Mn$_{x}$ film and the Ge buffer layer  The Ge$_{1-x}$Mn$_{x}$ film exhibits the same diamond structure as pure germanium  No defect can be seen which could be caused by the presence of nanocolumns  (c) Plane view micrograph performed on the same sample confirms the columnar structure and gives the density and size distribution of nanocolumns  (d) Mn chemical map obtained by energy filtered transmission electron microcopy (EFTEM)  The background was carefully substracted from pre-edge images  Bright areas correspond to Mn-rich regions }
\label{fig2}
\end{figure}

In samples grown at 130$^{\circ}$C and containing 6 \% Mn, we can observe vertical elongated nanostructures \textit{i e } nanocolumns as shown in Fig  2a  Nanocolumns extend through the whole Ge$_{1-x}$Mn$_{x}$ film thickness  From the high resolution TEM image shown in Fig  2b, we deduce their average diameter around 3 nm  Moreover in Fig  2b, the interface between the Ge buffer layer and the Ge$_{1-x}$Mn$_{x}$ film is flat and no defect propagates from the interface into the film  The Ge$_{1-x}$Mn$_{x}$ film is a perfect single crystal in epitaxial relationship with the substrate  In Fig  2c is shown a plane view micrograph of the same sample confirming the presence of nanocolumns in the film  From this image, we can deduce the size and density of nanocolumns  The nanocolumns density is 13000 $\rm{\mu m}^{-2}$ with a mean diameter of 3 nm which is coherent with cross-section measurements  In order to estimate the chemical composition of these nanocolumns, we further performed chemical mapping using EFTEM  In Fig  2d we show a cross sectional Mn chemical map of the Ge$_{1-x}$Mn$_{x}$ film  This map shows that the formation of nanocolumns is a consequence of Mn segregation  Nanocolumns are Mn rich and the surrounding matrix is Mn poor  However, it is impossible to deduce the Mn concentration in Ge$_{1-x}$Mn$_{x}$ nanocolumns from this cross section  Indeed, in cross section observations, the columns diameter is much smaller than the probed film thickness and the signal comes from the superposititon of the Ge matrix and Mn-rich nanocolumns  In order to quantify Mn concentration inside the nanocolumns and inside the Ge matrix, EELS measurements (not shown here) have been performed in a plane view geometry \cite{Jame06}  These observations revealed that the matrix Mn content is below 1 \% (detection limit of our instrument)  Measuring the surface occupied by the matrix and the nanocolumns in plane view TEM images, and considering the average Mn concentration in the sample (6 \%), we can estimate the Mn concentration in the nanocolumns  The Mn concentration measured by EELS being between 0\% and 1\%, we can conclude that the Mn content in the nanocolumns is between 30 \% and 38 \% \\
For samples grown between 80$^\circ$C and 150$^\circ$C cross section and plane view TEM observations reveal the presence of Mn rich nanocolumns surrounded with a Mn poor Ge matrix  In order to investigate the influence of Mn concentration on the structural properties of Ge$_{1-x}$Mn$_{x}$ films, ten samples have been grown at 100$^\circ$C and at 150$^\circ$C with Mn concentrations of 1 3 \%, 2 3 \%, 4 \%, 7 \% and 11 3 \%  Their structural properties have been investigated by plane view TEM observations  

\begin{figure}[htb]
    \center
    \includegraphics[width= 98\linewidth]{ /fig3a eps}
	\includegraphics[width= 45\linewidth]{ /fig3b eps}
		\includegraphics[width= 45\linewidth]{ /fig3c eps}
    \caption{Nanocolumns size and density as a function of growth conditions  Samples considered have been grown at 100$^{\circ}$C and 150$^{\circ}$C respectively  (a) Mn concentration dependence of the size distribution  (b) columns density as a function of Mn concentration  (c) Volume fraction of the nanocolumns as a function of Mn concentration }
 \label{fig3}
\end{figure}

For samples grown at 100$^\circ$C with Mn concentrations below 5 \% the nanocolumns mean diameter is 1 8$\pm$0 2 nm  The evolution of columns density as a fonction of Mn concentration is reported in figure 3b  By increasing the Mn concentration from 1 3 \% to 4 \% we observe a significant increase of the columns density from 13000 to 30000 $\rm{\mu m}^{-2}$  For Mn concentrations higher than 5 \% the density seems to reach a plateau corresponding to 35000 $\rm{\mu m}^{-2}$ and their diameter slightly increases from 1 8 nm at 4 \% to 2 8 nm at 11 3 \%  By plotting the volume fraction occupied by the columns in the film as a function of Mn concentration, we observe a linear dependence for Mn contents below 5 \%  The non-linear behavior above 5 \% may indicate that the mechanism of Mn incorporation is different in this concentration range, leading to an increase of Mn concentration in the columns or in the matrix  For samples grown at 100$^\circ$C, nanocolumns are always fully coherent with the surrounding matrix (Fig  4a)  

Increasing the Mn content in the samples grown at 150$^\circ$C from 1 3 \% to 11 3 \% leads to a decrease of the columns density (fig 3b)  Moreover, their average diameter increases significantly and size distributions become very broad (see Fig  3a)  For the highest Mn concentration (11 3 \%) we observe the coexistence of very small columns with a diameter of 2 5 nm and very large columns with a diameter of 9 nm  In samples grown at 150$^\circ$C containing 11 3 \% of Mn, the crystalline structure of nanocolumns is also highly modified  In plane view TEM micrographs, one can see columns exhibiting several different crystalline structures  We still observe some columns which are fully coherent with the Ge matrix like in the samples grown at lower temperature  Nevertheless, observations performed on these samples grown at 150$^\circ$C and with 11 3\% Mn reveal some uniaxially \cite{Jame06} or fully relaxed columns exhibiting a misfit of 4 \% between the matrix and the columns and leading to misfit dislocations at the interface between the column and the matrix (see fig  4b)  Thus we can conclude that coherent columns are probably in strong compression and the surrounding matrix in tension  On the same samples (T$_g$=150$^{\circ}$C, 11 3\% Mn), we also observe a large number of highly disordered nanocolumns leading to an amorphous like TEM contrast(fig  4c) 

\begin{figure}[htb]
    \center
   \includegraphics[width= 31\linewidth]{ /fig4a eps}
	\includegraphics[width= 31\linewidth]{ /fig4b eps}
	\includegraphics[width= 31\linewidth]{ /fig4c eps}
    \caption{Plane view high resolution transmission electron micrographs of different types of nanocolumns : (a) typical structure of a column grown at 100$^{\circ}$C  The crystal structure is exactly the same as germanium   (b) Partially relaxed nanocolumn  One can see dislocations at the interface between the columns and the matrix leading to stress relaxation  (c) Amorphous nanocolumn  These columns are typical in samples grown at 150$^{\circ}$C with high Mn contents }
 \label{fig4}
\end{figure}

In conclusion, we have evidenced a complex mechanism of Mn incorporation in Mn doped Ge films grown at low temperature  In particular Mn incorporation is highly inhomogeneous  For very low growth temperatures (below 120$^\circ$C) the diffusion of Mn atoms leads to the formation of Mn rich, vertical nanocolumns  Their density mostly depends on Mn concentration and their mean diameter is about 2 nm  These results can be compared with the theoretical predictions of Fukushima \textit{et al } \cite{Fuku06}: they proposed a model of spinodal decomposition in (Ga,Mn)N and (Zn,Cr)Te based on layer by layer growth conditions and a strong pair attraction between Mn atoms which leads to the formation of nanocolumns  This model may also properly describe the formation of Mn rich nanocolumns in our samples  Layer by layer growth conditions can be deduced from RHEED pattern evolution during growth  For all the samples grown at low temperature, RHEED observations clearly indicate two-dimensional growth  Moreover, Ge/Ge$_{1-x}$Mn$_{x}$/Ge heterostructures have been grown and observed by TEM (see Fig  5)  Ge$_{1-x}$Mn$_{x}$/Ge (as well as Ge/Ge$_{1-x}$Mn$_{x}$) interfaces are very flat and sharp thus confirming a two-dimensional, layer by layer growth mode  Therefore we can assume that the formation of Mn rich nanocolumns is a consequence of 2D-spinodal decomposition 

\begin{figure}[htb]
    \center
	\includegraphics[width= 7\linewidth]{ /fig5 eps}
    \caption{Cross section high resolution micrograph of a Ge/Ge$_{1-x}$Mn$_{x}$/Ge/Ge$_{1-x}$Mn$_{x}$/Ge heterostructure  This sample has been grown at 130 $^{\circ}$C with 6\% Mn  Ge$_{1-x}$Mn$_{x}$ layers are 15 nm thick and Ge spacers 5 nm thick  We clearly see the sharpness of both Ge$_{1-x}$Mn$_{x}$/Ge and Ge/Ge$_{1-x}$Mn$_{x}$ interfaces  Mn segregation leading to the columns formation already takes place in very thin Ge$_{1-x}$Mn$_{x}$ films }
\label{fig5}
\end{figure}

For growth temperatures higher than 160$^\circ$C, cross section TEM and EFTEM observations (not shown here) reveal the coexistence of two Mn-rich phases: nanocolumns and Ge$_{3}$Mn$_{5}$ nanoclusters embedded in the germanium matrix  A typical high resolution TEM image is shown in figure 6  
Ge$_{3}$Mn$_{5}$ clusters are not visible in RHEED patterns for temperatures below 180$^\circ$C  To investigate the nature of these clusters, we performed x-ray diffraction in $\theta-2\theta$ mode  Diffraction scans were acquired on a high resolution diffractometer using the copper K$_\alpha$ radiation and on the GMT station of the BM32 beamline at the European Synchrotron Radiation Facility (ESRF)  Three samples grown at different temperatures and/or annealed at high temperature were investigated  The two first samples are Ge$_{1-x}$Mn$_{x}$ films grown at 130$^\circ$C and 170$^\circ$C respectively  The third one has been grown at 130$^\circ$C and post-growth annealed at 650$^\circ$C  By analysing x-ray diffraction spectra, we can evidence two different crystalline structures  For the sample grown at 130$^\circ$C, the $\theta-2\theta$ scan only reveals the (004) Bragg peak of the germanium crystal, confirming the good epitaxial relationship between the layer and the substrate, and the absence of secondary phases in the film in spite of a high dynamics of the order of 10$^7$  For both samples grown at 170$^\circ$C and annealed at 650$^\circ$C, $\theta-2\theta$ spectra are identical  In addition to the (004) peak of germanium, we observe three additional weak peaks  The first one corresponds to the (002) germanium forbidden peak which probably comes from a small distortion of the germanium crystal, and the two other peaks are respectively attributed to the (002) and (004) Bragg peaks of a secondary phase  The $c$ lattice parameter of Ge$_3$Mn$_5$ hexagonal crystal is 5 053 \AA \ \cite{Fort90} which is in very good agreement with the values obtained from diffraction data for both (002) and (004) lines assuming that the $c$ axis of Ge$_3$Mn$_5$ is along the [001] direction of the Ge substrate 

\begin{figure}[htb]
    \center
	\includegraphics[width= 7\linewidth]{ /fig6 eps}
	\caption{Cross section high resolution transmission electron micrograph of a sample grown at 170$^{\circ}$C  We observe the coexistence of two different Mn-rich phases: Ge$_{1-x}$Mn$_{x}$ nanocolumns and Ge$_3$Mn$_5$ clusters }
\label{fig6}
\end{figure}

In summary, in a wide range of growth temperatures and Mn concentrations, we have evidenced a two-dimensional spinodal decomposition leading to the formation of Mn-rich nanocolumns in Ge$_{1-x}$Mn$_{x}$ films  This decomposition is probably the consequence of: $(i)$ a strong pair attraction between Mn atoms, $(ii)$ a strong surface diffusion of Mn atoms in germanium even at low growth temperatures and $(iii)$ layer by layer growth conditions  We have also investigated the influence of growth parameters on the spinodal decomposition: at low growth temperatures (100$^{\circ}$C), increasing the Mn content leads to higher columns densities while at higher growth temperatures (150$^{\circ}$C), the columns density remains nearly constant whereas their size increases drastically  By plotting the nanocolumns density as a function of Mn content, we have shown that the mechanism of Mn incorporation in Ge changes above 5 \% of Mn  Finally, using TEM observations and x-ray diffraction, we have shown that Ge$_3$Mn$_5$ nanoclusters start to form at growth temperatures higher than 160$^\circ$C 

\section{Magnetic properties \label{magnetic}}

We have thoroughly investigated the magnetic properties of thin Ge$_{1-x}$Mn$_{x}$ films for different growth temperatures and Mn concentrations  In this section, we focus on Mn concentrations between 2 \% and 11 \%  We could clearly identify four different magnetic phases in Ge$_{1-x}$Mn$_{x}$ films : diluted Mn atoms in the germanium matrix, low $T_{C}$ nanocolumns ($T_{C}$ $\leq$ 170 K), high $T_{C}$ nanocolumns ($T_{C}$ $\geq$ 400 K) and Ge$_{3}$Mn$_{5}$ clusters ($T_{C}$ $\thickapprox$ 300 K)  The relative weight of each phase clearly depends on the growth temperature and to a lesser extend on Mn concentration  For low growth temperature ($<$ 120$^{\circ}$C), we show that nanocolumns are actually made of four uncorrelated superparamagnetic nanostructures  Increasing T$_{g}$ above 120$^{\circ}$C, we first obtain continuous columns exhibiting low $T_{C}$ ($<$ 170 K) and high $T_{C}$ ($>$ 400 K) for $T_{g}\approx$130$^{\circ}$C  The larger columns become ferromagnetic \textit{i e } $T_{B}>T_{C}$  Meanwhile Ge$_{3}$Mn$_{5}$ clusters start to form  Finally for higher $T_{g}$, the magnetic contribution from Ge$_{3}$Mn$_{5}$ clusters keeps increasing while the nanocolumns signal progressively disappears 

\begin{figure}[htb]
\center
   \includegraphics[width= 6\linewidth]{ /fig7a eps}
   \includegraphics[width= 3\linewidth]{ /fig7b eps}
\caption{(a) Temperature dependence of the saturation magnetization (in $\mu_{B}$/Mn) of Ge$_{0 93}$Mn$_{0 07}$ samples for different growth temperatures



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Read the following text and answer briefly.

Context 2: For other uses, see Electricity (disambiguation) 
"Electric" redirects here  For other uses, see Electric (disambiguation) 
Lightning is one of the most dramatic effects of electricity 
Electricity is the set of physical phenomena associated with the presence and motion of matter that has a property of electric charge  In early days, electricity was considered as being not related to magnetism  Later on, many experimental results and the development of Maxwell's equations indicated that both electricity and magnetism are from a single phenomenon: electromagnetism  Various common phenomena are related to electricity, including lightning, static electricity, electric heating, electric discharges and many others 
The presence of an electric charge, which can be either positive or negative, produces an electric field  The movement of electric charges is an electric current and produces a magnetic field 
When a charge is placed in a location with a non-zero electric field, a force will act on it  The magnitude of this force is given by Coulomb's law  Thus, if that charge were to move, the electric field would be doing work on the electric charge  Thus we can speak of electric potential at a certain point in space, which is equal to the work done by an external agent in carrying a unit of positive charge from an arbitrarily chosen reference point to that point without any acceleration and is typically measured in volts 
electronics which deals with electrical circuits that involve active electrical components such as vacuum tubes, transistors, diodes and integrated circuits, and associated passive interconnection technologies 
Electrical phenomena have been studied since antiquity, though progress in theoretical understanding remained slow until the seventeenth and eighteenth centuries  Even then, practical applications for electricity were few, and it would not be until the late nineteenth century that electrical engineers were able to put it to industrial and residential use  The rapid expansion in electrical technology at this time transformed industry and society, becoming a driving force for the Second Industrial Revolution  Electricity's extraordinary versatility means it can be put to an almost limitless set of applications which include transport, heating, lighting, communications, and computation  Electrical power is now the backbone of modern industrial society 
Long before any knowledge of electricity existed, people were aware of shocks from electric fish  Ancient Egyptian texts dating from 2750 BCE referred to these fish as the "Thunderer of the Nile", and described them as the "protectors" of all other fish  Electric fish were again reported millennia later by ancient Greek, Roman and Arabic naturalists and physicians  Several ancient writers, such as Pliny the Elder and Scribonius Largus, attested to the numbing effect of electric shocks delivered by catfish and electric rays, and knew that such shocks could travel along conducting objects  Patients suffering from ailments such as gout or headache were directed to touch electric fish in the hope that the powerful jolt might cure them  Possibly the earliest and nearest approach to the discovery of the identity of lightning, and electricity from any other source, is to be attributed to the Arabs, who before the 15th century had the Arabic word for lightning ra‘ad (رعد) applied to the electric ray 
Ancient cultures around the Mediterranean knew that certain objects, such as rods of amber, could be rubbed with cat's fur to attract light objects like feathers  Thales of Miletus made a series of observations on static electricity around 600 BCE, from which he believed that friction rendered amber magnetic, in contrast to minerals such as magnetite, which needed no rubbing  Thales was incorrect in believing the attraction was due to a magnetic effect, but later science would prove a link between magnetism and electricity  According to a controversial theory, the Parthians may have had knowledge of electroplating, based on the 1936 discovery of the Baghdad Battery, which resembles a galvanic cell, though it is uncertain whether the artifact was electrical in nature 
Benjamin Franklin conducted extensive research on electricity in the 18th century, as documented by Joseph Priestley (1767) History and Present Status of Electricity, with whom Franklin carried on extended correspondence 
Electricity would remain little more than an intellectual curiosity for millennia until 1600, when the English scientist William Gilbert wrote De Magnete, in which he made a careful study of electricity and magnetism, distinguishing the lodestone effect from static electricity produced by rubbing amber  He coined the New Latin word electricus ("of amber" or "like amber", from ἤλεκτρον, elektron, the Greek word for "amber") to refer to the property of attracting small objects after being rubbed  This association gave rise to the English words "electric" and "electricity", which made their first appearance in print in Thomas Browne's Pseudodoxia Epidemica of 1646 
Further work was conducted in the 17th and early 18th centuries by Otto von Guericke, Robert Boyle, Stephen Gray and C  F  du Fay  Later in the 18th century, Benjamin Franklin conducted extensive research in electricity, selling his possessions to fund his work  In June 1752 he is reputed to have attached a metal key to the bottom of a dampened kite string and flown the kite in a storm-threatened sky  A succession of sparks jumping from the key to the back of his hand showed that lightning was indeed electrical in nature  He also explained the apparently paradoxical behavior of the Leyden jar as a device for storing large amounts of electrical charge in terms of electricity consisting of both positive and negative charges 
In 1791, Luigi Galvani published his discovery of bioelectromagnetics, demonstrating that electricity was the medium by which neurons passed signals to the muscles  Alessandro Volta's battery, or voltaic pile, of 1800, made from alternating layers of zinc and copper, provided scientists with a more reliable source of electrical energy than the electrostatic machines previously used  The recognition of electromagnetism, the unity of electric and magnetic phenomena, is due to Hans Christian Ørsted and André-Marie Ampère in 1819–1820  Michael Faraday invented the electric motor in 1821, and Georg Ohm mathematically analysed the electrical circuit in 1827  Electricity and magnetism (and light) were definitively linked by James Clerk Maxwell, in particular in his "On Physical Lines of Force" in 1861 and 1862 
While the early 19th century had seen rapid progress in electrical science, the late 19th century would see the greatest progress in electrical engineering  Through such people as Alexander Graham Bell, Ottó Bláthy, Thomas Edison, Galileo Ferraris, Oliver Heaviside, Ányos Jedlik, William Thomson, 1st Baron Kelvin, Charles Algernon Parsons, Werner von Siemens, Joseph Swan, Reginald Fessenden, Nikola Tesla and George Westinghouse, electricity turned from a scientific curiosity into an essential tool for modern life 
In 1887, Heinrich Hertz:843–44 discovered that electrodes illuminated with ultraviolet light create electric sparks more easily  In 1905, Albert Einstein published a paper that explained experimental data from the photoelectric effect as being the result of light energy being carried in discrete quantized packets, energising electrons  This discovery led to the quantum revolution  Einstein was awarded the Nobel Prize in Physics in 1921 for "his discovery of the law of the photoelectric effect"  The photoelectric effect is also employed in photocells such as can be found in solar panels and this is frequently used to make electricity commercially 
The first solid-state device was the "cat's-whisker detector" first used in the 1900s in radio receivers  A whisker-like wire is placed lightly in contact with a solid crystal (such as a germanium crystal) to detect a radio signal by the contact junction effect  In a solid-state component, the current is confined to solid elements and compounds engineered specifically to switch and amplify it  Current flow can be understood in two forms: as negatively charged electrons, and as positively charged electron deficiencies called holes  These charges and holes are understood in terms of quantum physics  The building material is most often a crystalline semiconductor 
The solid-state device came into its own with the invention of the transistor in 1947  Common solid-state devices include transistors, microprocessor chips, and RAM  A specialized type of RAM called flash RAM is used in USB flash drives and more recently, solid-state drives to replace mechanically rotating magnetic disc hard disk drives  Solid state devices became prevalent in the 1950s and the 1960s, during the transition from vacuum tubes to semiconductor diodes, transistors, integrated circuit (IC) and the light-emitting diode (LED) 
The presence of charge gives rise to an electrostatic force: charges exert a force on each other, an effect that was known, though not understood, in antiquity :457 A lightweight ball suspended from a string can be charged by touching it with a glass rod that has itself been charged by rubbing with a cloth  If a similar ball is charged by the same glass rod, it is found to repel the first: the charge acts to force the two balls apart  Two balls that are charged with a rubbed amber rod also repel each other  However, if one ball is charged by the glass rod, and the other by an amber rod, the two balls are found to attract each other  These phenomena were investigated in the late eighteenth century by Charles-Augustin de Coulomb, who deduced that charge manifests itself in two opposing forms  This discovery led to the well-known axiom: like-charged objects repel and opposite-charged objects attract 
The force acts on the charged particles themselves, hence charge has a tendency to spread itself as evenly as possible over a conducting surface  The magnitude of the electromagnetic force, whether attractive or repulsive, is given by Coulomb's law, which relates the force to the product of the charges and has an inverse-square relation to the distance between them :35 The electromagnetic force is very strong, second only in strength to the strong interaction, but unlike that force it operates over all distances  In comparison with the much weaker gravitational force, the electromagnetic force pushing two electrons apart is 1042 times that of the gravitational attraction pulling them together 
Study has shown that the origin of charge is from certain types of subatomic particles which have the property of electric charge  Electric charge gives rise to and interacts with the electromagnetic force, one of the four fundamental forces of nature  The most familiar carriers of electrical charge are the electron and proton  Experiment has shown charge to be a conserved quantity, that is, the net charge within an electrically isolated system will always remain constant regardless of any changes taking place within that system  Within the system, charge may be transferred between bodies, either by direct contact, or by passing along a conducting material, such as a wire :2–5 The informal term static electricity refers to the net presence (or 'imbalance') of charge on a body, usually caused when dissimilar materials are rubbed together, transferring charge from one to the other 
The charge on electrons and protons is opposite in sign, hence an amount of charge may be expressed as being either negative or positive  By convention, the charge carried by electrons is deemed negative, and that by protons positive, a custom that originated with the work of Benjamin Franklin  The amount of charge is usually given the symbol Q and expressed in coulombs; each electron carries the same charge of approximately −1 6022×10−19 coulomb  The proton has a charge that is equal and opposite, and thus +1 6022×10−19 coulomb  Charge is possessed not just by matter, but also by antimatter, each antiparticle bearing an equal and opposite charge to its corresponding particle 
The movement of electric charge is known as an electric current, the intensity of which is usually measured in amperes  Current can consist of any moving charged particles; most commonly these are electrons, but any charge in motion constitutes a current  Electric current can flow through some things, electrical conductors, but will not flow through an electrical insulator 
By historical convention, a positive current is defined as having the same direction of flow as any positive charge it contains, or to flow from the most positive part of a circuit to the most negative part  Current defined in this manner is called conventional current  The motion of negatively charged electrons around an electric circuit, one of the most familiar forms of current, is thus deemed positive in the opposite direction to that of the electrons  However, depending on the conditions, an electric current can consist of a flow of charged particles in either direction, or even in both directions at once  The positive-to-negative convention is widely used to simplify this situation 
The process by which electric current passes through a material is termed electrical conduction, and its nature varies with that of the charged particles and the material through which they are travelling  Examples of electric currents include metallic conduction, where electrons flow through a conductor such as metal, and electrolysis, where ions (charged atoms) flow through liquids, or through plasmas such as electrical sparks  While the particles themselves can move quite slowly, sometimes with an average drift velocity only fractions of a millimetre per second,:17 the electric field that drives them itself propagates at close to the speed of light, enabling electrical signals to pass rapidly along wires 
Current causes several observable effects, which historically were the means of recognising its presence  That water could be decomposed by the current from a voltaic pile was discovered by Nicholson and Carlisle in 1800, a process now known as electrolysis  Their work was greatly expanded upon by Michael Faraday in 1833  Current through a resistance causes localised heating, an effect James Prescott Joule studied mathematically in 1840 :23–24 One of the most important discoveries relating to current was made accidentally by Hans Christian Ørsted in 1820, when, while preparing a lecture, he witnessed the current in a wire disturbing the needle of a magnetic compass  He had discovered electromagnetism, a fundamental interaction between electricity and magnetics  The level of electromagnetic emissions generated by electric arcing is high enough to produce electromagnetic interference, which can be detrimental to the workings of adjacent equipment 
In engineering or household applications, current is often described as being either direct current (DC) or alternating current (AC)  These terms refer to how the current varies in time  Direct current, as produced by example from a battery and required by most electronic devices, is a unidirectional flow from the positive part of a circuit to the negative :11 If, as is most common, this flow is carried by electrons, they will be travelling in the opposite direction  Alternating current is any current that reverses direction repeatedly; almost always this takes the form of a sine wave :206–07 Alternating current thus pulses back and forth within a conductor without the charge moving any net distance over time  The time-averaged value of an alternating current is zero, but it delivers energy in first one direction, and then the reverse  Alternating current is affected by electrical properties that are not observed under steady state direct current, such as inductance and capacitance :223–25 These properties however can become important when circuitry is subjected to transients, such as when first energised 
The concept of the electric field was introduced by Michael Faraday  An electric field is created by a charged body in the space that surrounds it, and results in a force exerted on any other charges placed within the field  The electric field acts between two charges in a similar manner to the way that the gravitational field acts between two masses, and like it, extends towards infinity and shows an inverse square relationship with distance  However, there is an important difference  Gravity always acts in attraction, drawing two masses together, while the electric field can result in either attraction or repulsion  Since large bodies such as planets generally carry no net charge, the electric field at a distance is usually zero  Thus gravity is the dominant force at distance in the universe, despite being much weaker 
A hollow conducting body carries all its charge on its outer surface  The field is therefore zero at all places inside the body :88 This is the operating principal of the Faraday cage, a conducting metal shell which isolates its interior from outside electrical effects 
The principles of electrostatics are important when designing items of high-voltage equipment  There is a finite limit to the electric field strength that may be withstood by any medium  Beyond this point, electrical breakdown occurs and an electric arc causes flashover between the charged parts  Air, for example, tends to arc across small gaps at electric field strengths which exceed 30 kV per centimetre  Over larger gaps, its breakdown strength is weaker, perhaps 1 kV per centimetre  The most visible natural occurrence of this is lightning, caused when charge becomes separated in the clouds by rising columns of air, and raises the electric field in the air to greater than it can withstand  The voltage of a large lightning cloud may be as high as 100 MV and have discharge energies as great as 250 kWh 
A pair of AA cells  The + sign indicates the polarity of the potential difference between the battery terminals 
The concept of electric potential is closely linked to that of the electric field  A small charge placed within an electric field experiences a force, and to have brought that charge to that point against the force requires work  The electric potential at any point is defined as the energy required to bring a unit test charge from an infinite distance slowly to that point  It is usually measured in volts, and one volt is the potential for which one joule of work must be expended to bring a charge of one coulomb from infinity :494–98 This definition of potential, while formal, has little practical application, and a more useful concept is that of electric potential difference, and is the energy required to move a unit charge between two specified points  An electric field has the special property that it is conservative, which means that the path taken by the test charge is irrelevant: all paths between two specified points expend the same energy, and thus a unique value for potential difference may be stated :494–98 The volt is so strongly identified as the unit of choice for measurement and description of electric potential difference that the term voltage sees greater everyday usage 
For practical purposes, it is useful to define a common reference point to which potentials may be expressed and compared  While this could be at infinity, a much more useful reference is the Earth itself, which is assumed to be at the same potential everywhere  This reference point naturally takes the name earth or ground  Earth is assumed to be an infinite source of equal amounts of positive and negative charge, and is therefore electrically uncharged—and unchargeable 
Electric potential is a scalar quantity, that is, it has only magnitude and not direction  It may be viewed as analogous to height: just as a released object will fall through a difference in heights caused by a gravitational field, so a charge will 'fall' across the voltage caused by an electric field  As relief maps show contour lines marking points of equal height, a set of lines marking points of equal potential (known as equipotentials) may be drawn around an electrostatically charged object  The equipotentials cross all lines of force at right angles  They must also lie parallel to a conductor's surface, otherwise this would produce a force that will move the charge carriers to even the potential of the surface 
Ørsted's discovery in 1821 that a magnetic field existed around all sides of a wire carrying an electric current indicated that there was a direct relationship between electricity and magnetism  Moreover, the interaction seemed different from gravitational and electrostatic forces, the two forces of nature then known  The force on the compass needle did not direct it to or away from the current-carrying wire, but acted at right angles to it  Ørsted's slightly obscure words were that "the electric conflict acts in a revolving manner " The force also depended on the direction of the current, for if the flow was reversed, then the force did too 
Ørsted did not fully understand his discovery, but he observed the effect was reciprocal: a current exerts a force on a magnet, and a magnetic field exerts a force on a current  The phenomenon was further investigated by Ampère, who discovered that two parallel current-carrying wires exerted a force upon each other: two wires conducting currents in the same direction are attracted to each other, while wires containing currents in opposite directions are forced apart  The interaction is mediated by the magnetic field each current produces and forms the basis for the international definition of the ampere 
This relationship between magnetic fields and currents is extremely important, for it led to Michael Faraday's invention of the electric motor in 1821  Faraday's homopolar motor consisted of a permanent magnet sitting in a pool of mercury  A current was allowed through a wire suspended from a pivot above the magnet and dipped into the mercury  The magnet exerted a tangential force on the wire, making it circle around the magnet for as long as the current was maintained 
Experimentation by Faraday in 1831 revealed that a wire moving perpendicular to a magnetic field developed a potential difference between its ends  Further analysis of this process, known as electromagnetic induction, enabled him to state the principle, now known as Faraday's law of induction, that the potential difference induced in a closed circuit is proportional to the rate of change of magnetic flux through the loop  Exploitation of this discovery enabled him to invent the first electrical generator in 1831, in which he converted the mechanical energy of a rotating copper disc to electrical energy  Faraday's disc was inefficient and of no use as a practical generator, but it showed the possibility of generating electric power using magnetism, a possibility that would be taken up by those that followed on from his work 
Italian physicist Alessandro Volta showing his "battery" to French emperor Napoleon Bonaparte in the early 19th century 
The ability of chemical reactions to produce electricity, and conversely the ability of electricity to drive chemical reactions has a wide array of uses 
Electrochemistry has always been an important part of electricity  From the initial invention of the Voltaic pile, electrochemical cells have evolved into the many different types of batteries, electroplating and electrolysis cells  Aluminium is produced in vast quantities this way, and many portable devices are electrically powered using rechargeable cells 
A basic electric circuit  The voltage source V on the left drives a current I around the circuit, delivering electrical energy into the resistor R  From the resistor, the current returns to the source, completing the circuit 
An electric circuit is an interconnection of electric components such that electric charge is made to flow along a closed path (a circuit), usually to perform some useful task 
Electric power is the rate at which electric energy is transferred by an electric circuit  The SI unit of power is the watt, one joule per second 
Electricity generation is often done with electric generators, but can also be supplied by chemical sources such as electric batteries or by other means from a wide variety of sources of energy  Electric power is generally supplied to businesses and homes by the electric power industry  Electricity is usually sold by the kilowatt hour (3 6 MJ) which is the product of power in kilowatts multiplied by running time in hours  Electric utilities measure power using electricity meters, which keep a running total of the electric energy delivered to a customer  Unlike fossil fuels, electricity is a low entropy form of energy and can be converted into motion or many other forms of energy with high efficiency 
Electronics deals with electrical circuits that involve active electrical components such as vacuum tubes, transistors, diodes, optoelectronics, sensors and integrated circuits, and associated passive interconnection technologies  The nonlinear behaviour of active components and their ability to control electron flows makes amplification of weak signals possible and electronics is widely used in information processing, telecommunications, and signal processing  The ability of electronic devices to act as switches makes digital information processing possible  Interconnection technologies such as circuit boards, electronics packaging technology, and other varied forms of communication infrastructure complete circuit functionality and transform the mixed components into a regular working system 
Today, most electronic devices use semiconductor components to perform electron control  The study of semiconductor devices and related technology is considered a branch of solid state physics, whereas the design and construction of electronic circuits to solve practical problems come under electronics engineering 
Thus, the work of many researchers enabled the use of electronics to convert signals into high frequency oscillating currents, and via suitably shaped conductors, electricity permits the transmission and reception of these signals via radio waves over very long distances 
Early 20th-century alternator made in Budapest, Hungary, in the power generating hall of a hydroelectric station (photograph by Prokudin-Gorsky, 1905–1915) 
In the 6th century BC, the Greek philosopher Thales of Miletus experimented with amber rods and these experiments were the first studies into the production of electrical energy  While this method, now known as the triboelectric effect, can lift light objects and generate sparks, it is extremely inefficient  It was not until the invention of the voltaic pile in the eighteenth century that a viable source of electricity became available  The voltaic pile, and its modern descendant, the electrical battery, store energy chemically and make it available on demand in the form of electrical energy  The battery is a versatile and very common power source which is ideally suited to many applications, but its energy storage is finite, and once discharged it must be disposed of or recharged  For large electrical demands electrical energy must be generated and transmitted continuously over conductive transmission lines 
Electrical power is usually generated by electro-mechanical generators driven by steam produced from fossil fuel combustion, or the heat released from nuclear reactions; or from other sources such as kinetic energy extracted from wind or flowing water  The modern steam turbine invented by Sir Charles Parsons in 1884 today generates about 80 percent of the electric power in the world using a variety of heat sources  Such generators bear no resemblance to Faraday's homopolar disc generator of 1831, but they still rely on his electromagnetic principle that a conductor linking a changing magnetic field induces a potential difference across its ends  The invention in the late nineteenth century of the transformer meant that electrical power could be transmitted more efficiently at a higher voltage but lower current  Efficient electrical transmission meant in turn that electricity could be generated at centralised power stations, where it benefited from economies of scale, and then be despatched relatively long distances to where it was needed 
Since electrical energy cannot easily be stored in quantities large enough to meet demands on a national scale, at all times exactly as much must be produced as is required  This requires electricity utilities to make careful predictions of their electrical loads, and maintain constant co-ordination with their power stations  A certain amount of generation must always be held in reserve to cushion an electrical grid against inevitable disturbances and losses 
Electricity is a very convenient way to transfer energy, and it has been adapted to a huge, and growing, number of uses  The invention of a practical incandescent light bulb in the 1870s led to lighting becoming one of the first publicly available applications of electrical power  Although electrification brought with it its own dangers, replacing the naked flames of gas lighting greatly reduced fire hazards within homes and factories  Public utilities were set up in many cities targeting the burgeoning market for electrical lighting  In the late 20th century and in modern times, the trend has started to flow in the direction of deregulation in the electrical power sector 
The resistive Joule heating effect employed in filament light bulbs also sees more direct use in electric heating  While this is versatile and controllable, it can be seen as wasteful, since most electrical generation has already required the production of heat at a power station  A number of countries, such as Denmark, have issued legislation restricting or banning the use of resistive electric heating in new buildings  Electricity is however still a highly practical energy source for heating and refrigeration, with air conditioning/heat pumps representing a growing sector for electricity demand for heating and cooling, the effects of which electricity utilities are increasingly obliged to accommodate 
Electricity is used within telecommunications, and indeed the electrical telegraph, demonstrated commercially in 1837 by Cooke and Wheatstone, was one of its earliest applications  With the construction of first intercontinental, and then transatlantic, telegraph systems in the 1860s, electricity had enabled communications in minutes across the globe  Optical fibre and satellite communication have taken a share of the market for communications systems, but electricity can be expected to remain an essential part of the process 
The effects of electromagnetism are most visibly employed in the electric motor, which provides a clean and efficient means of motive power  A stationary motor such as a winch is easily provided with a supply of power, but a motor that moves with its application, such as an electric vehicle, is obliged to either carry along a power source such as a battery, or to collect current from a sliding contact such as a pantograph  Electrically powered vehicles are used in public transportation, such as electric buses and trains, and an increasing number of battery-powered electric cars in private ownership 
Electronic devices make use of the transistor, perhaps one of the most important inventions of the twentieth century, and a fundamental building block of all modern circuitry  A modern integrated circuit may contain several billion miniaturised transistors in a region only a few centimetres square 
A voltage applied to a human body causes an electric current through the tissues, and although the relationship is non-linear, the greater the voltage, the greater the current  The threshold for perception varies with the supply frequency and with the path of the current, but is about 0 1 mA to 1 mA for mains-frequency electricity, though a current as low as a microamp can be detected as an electrovibration effect under certain conditions  If the current is sufficiently high, it will cause muscle contraction, fibrillation of the heart, and tissue burns  The lack of any visible sign that a conductor is electrified makes electricity a particular hazard  The pain caused by an electric shock can be intense, leading electricity at times to be employed as a method of torture  Death caused by an electric shock is referred to as electrocution  Electrocution is still the means of judicial execution in some jurisdictions, though its use has become rarer in recent times 
Electricity is not a human invention, and may be observed in several forms in nature, a prominent manifestation of which is lightning  Many interactions familiar at the macroscopic level, such as touch, friction or chemical bonding, are due to interactions between electric fields on the atomic scale  The Earth's magnetic field is thought to arise from a natural dynamo of circulating currents in the planet's core  Certain crystals, such as quartz, or even sugar, generate a potential difference across their faces when subjected to external pressure  This phenomenon is known as piezoelectricity, from the Greek piezein (πιέζειν), meaning to press, and was discovered in 1880 by Pierre and Jacques Curie  The effect is reciprocal, and when a piezoelectric material is subjected to an electric field, a small change in physical dimensions takes place 
§Bioelectrogenesis in microbial life is a prominent phenomenon in soils and sediment ecology resulting from anaerobic respiration  The microbial fuel cell mimics this ubiquitous natural phenomenon 
Some organisms, such as sharks, are able to detect and respond to changes in electric fields, an ability known as electroreception, while others, termed electrogenic, are able to generate voltages themselves to serve as a predatory or defensive weapon  The order Gymnotiformes, of which the best known example is the electric eel, detect or stun their prey via high voltages generated from modified muscle cells called electrocytes  All animals transmit information along their cell membranes with voltage pulses called action potentials, whose functions include communication by the nervous system between neurons and muscles  An electric shock stimulates this system, and causes muscles to contract  Action potentials are also responsible for coordinating activities in certain plants 
In the 19th and early 20th century, electricity was not part of the everyday life of many people, even in the industrialised Western world  The popular culture of the time accordingly often depicted it as a mysterious, quasi-magical force that can slay the living, revive the dead or otherwise bend the laws of nature  This attitude began with the 1771 experiments of Luigi Galvani in which the legs of dead frogs were shown to twitch on application of animal electricity  "Revitalization" or resuscitation of apparently dead or drowned persons was reported in the medical literature shortly after Galvani's work  These results were known to Mary Shelley when she authored Frankenstein (1819), although she does not name the method of revitalization of the monster  The revitalization of monsters with electricity later became a stock theme in horror films 
As the public familiarity with electricity as the lifeblood of the Second Industrial Revolution grew, its wielders were more often cast in a positive light, such as the workers who "finger death at their gloves' end as they piece and repiece the living wires" in Rudyard Kipling's 1907 poem Sons of Martha  Electrically powered vehicles of every sort featured large in adventure stories such as those of Jules Verne and the Tom Swift books  The masters of electricity, whether fictional or real—including scientists such as Thomas Edison, Charles Steinmetz or Nikola Tesla—were popularly conceived of as having wizard-like powers 
With electricity ceasing to be a novelty and becoming a necessity of everyday life in the later half of the 20th century, it required particular attention by popular culture only when it stops flowing, an event that usually signals disaster  The people who keep it flowing, such as the nameless hero of Jimmy Webb’s song "Wichita Lineman" (1968), are still often cast as heroic, wizard-like figures 
Ampère's circuital law, connects the direction of an electric current and its associated magnetic currents 
^ Diogenes Laertius  R D  Hicks (ed )  "Lives of Eminent Philosophers, Book 1 Chapter 1 "  Perseus Digital Library  Tufts University  Retrieved 5 February 2017  Aristotle and Hippias affirm that, arguing from the magnet and from amber, he attributed a soul or life even to inanimate objects 
^ Aristotle  Daniel C  Stevenson (ed )  "De Animus (On the Soul) Book 1 Part 2 (B4 verso)"  The Internet Classics Archive  Translated by J A  Smith  Retrieved 5 February 2017  Thales, too, to judge from what is recorded about him, seems to have held soul to be a motive force, since he said that the magnet has a soul in it because it moves the iron 
^ a b c Guarnieri, M  (2014)  "Electricity in the age of Enlightenment"  IEEE Industrial Electronics Magazine  8 (3): 60–63  doi:10 1109/MIE 2014 2335431 
^ Srodes, James (2002), Franklin: The Essential Founding Father, Regnery Publishing, pp  92–94, ISBN 0-89526-163-4 It is uncertain if Franklin personally carried out this experiment, but it is popularly attributed to him 
^ a b Guarnieri, M  (2014)  "The Big Jump from the Legs of a Frog"  IEEE Industrial Electronics Magazine  8 (4): 59–61, 69  doi:10 1109/MIE 2014 2361237 
^ Hertz, Heinrich (1887)  "Ueber den Einfluss des ultravioletten Lichtes auf die electrische Entladung"  Annalen der Physik  267 (8): S  983–1000  Bibcode:1887AnP   267  983H  doi:10 1002/andp 18872670827 
^ "The Nobel Prize in Physics 1921"  Nobel Foundation  Retrieved 2013-03-16 
^ John Sydney Blakemore, Solid state physics, pp  1–3, Cambridge University Press, 1985 ISBN 0-521-31391-0 
^ Richard C  Jaeger, Travis N  Blalock, Microelectronic circuit design, pp  46–47, McGraw-Hill Professional, 2003 ISBN 0-07-250503-6 
^ "The repulsive force between two small spheres charged with the same type of electricity is inversely proportional to the square of the distance between the centres of the two spheres " Charles-Augustin de Coulomb, Histoire de l'Academie Royal des Sciences, Paris 1785 
^ Sewell, Tyson (1902), The Elements of Electrical Engineering, Lockwood, p  18   The Q originally stood for 'quantity of electricity', the term 'electricity' now more commonly expressed as 'charge' 
^ a b Berkson, William (1974), Fields of Force: The Development of a World View from Faraday to Einstein, Routledge, p  370, ISBN 0-7100-7626-6 Accounts differ as to whether this was before, during, or after a lecture 
^ "Lab Note #105 EMI Reduction – Unsuppressed vs  Suppressed"  Arc Suppression Technologies  April 2011  Retrieved March 7, 2012 
^ Almost all electric fields vary in space  An exception is the electric field surrounding a planar conductor of infinite extent, the field of which is uniform 
^ Paul J  Nahin (9 October 2002)  Oliver Heaviside: The Life, Work, and Times of an Electrical Genius of the Victorian Age  JHU Press  ISBN 978-0-8018-6909-9 
^ "The Bumpy Road to Energy Deregulation"  EnPowered  2016-03-28 
^ a b c d e f g h Van Riper, op cit , p  71 
Look up electricity in Wiktionary, the free dictionary 
Basic Concepts of Electricity chapter from Lessons In Electric Circuits Vol 1 DC book and series 



ground_truth: Watt, one joule per second.

prompt_front: Now, answer the following question based on the text below, only give me the answer and do not output any other words.

Question: What is the average magnetic moment per column in Ge$_{1-x}$Mn$_{x}$ films?

Read the following text and answer briefly.

Context 3:  The magnetic field is applied in the film plane  The inset shows the temperature dependence of a sample grown at 130$^{\circ}$C and annealed at 650$^{\circ}$C for 15 minutes  After annealing, the magnetic signal mostly arises from Ge$_{3}$Mn$_{5}$ clusters  (b) ZFC-FC measurements performed on Ge$_{0 93}$Mn$_{0 07}$ samples for different growth temperatures  The in-plane applied field is 0 015 T  The ZFC peak at low temperature ($\leq$150 K) can be attributed to the superparamagnetic nanocolumns  This peak widens and shifts towards high blocking temperatures when increasing growth temperature  The second peak above 150 K in the ZFC curve which increases with increasing growth temperature is attributed to superparamagnetic Ge$_{3}$Mn$_{5}$ clusters  The increasing ZFC-FC irreversibility at $\approx$ 300 K is due to the increasing contribution from large ferromagnetic Ge$_{3}$Mn$_{5}$ clusters  The nanocolumns signal completely vanishes after annealing at 650$^{\circ}$C for 15 minutes }
\label{fig7}
\end{figure}

In Fig  7a, the saturation magnetization at 2 Tesla in $\mu_{B}$/Mn of Ge$_{1-x}$Mn$_{x}$ films with 7 \% of Mn is plotted as a function of temperature for different growth temperatures ranging from $T_{g}$=90$^{\circ}$C up to 160$^{\circ}$C  The inset shows the temperature dependence of the magnetization at 2 Tesla after annealing at 650$^{\circ}$C during 15 minutes  Figure 7b displays the corresponding Zero Field Cooled - Field Cooled (ZFC-FC) curves recorded at 0 015 Tesla  In the ZFC-FC procedure, the sample is first cooled down to 5 K in zero magnetic field and the susceptibility is subsequently recorded at 0 015 Tesla while increasing the temperature up to 400 K (ZFC curve)  Then, the susceptibility is recorded under the same magnetic field while decreasing the temperature down to 5 K (FC curve)  Three different regimes can be clearly distinguished  \\
For $T_{g}\leq$120$^{\circ}$C, the temperature dependence of the saturation magnetization remains nearly the same while increasing growth temperature  The overall magnetic signal vanishing above 200 K is attributed to the nanocolumns whereas the increasing signal below 50 K originates from diluted Mn atoms in the surrounding matrix  The Mn concentration dependence of the saturation magnetization is displayed in figure 8  For the lowest Mn concentration (4 \%), the contribution from diluted Mn atoms is very high and drops sharply for higher Mn concentrations (7 \%, 9 \% and 11 3 \%)  Therefore the fraction of Mn atoms in the diluted matrix decreases with Mn concentration probably because Mn atoms are more and more incorporated in the nanocolumns  In parallel, the Curie temperature of nanocolumns increases with the Mn concentration reaching 170 K for 11 3 \% of Mn  This behavior may be related to different Mn compositions and to the increasing diameter of nanocolumns (from 1 8 nm to 2 8 nm) as discussed in section \ref{structural} 

\begin{figure}[htb]
\center
   \includegraphics[width= 7\linewidth]{ /fig8 eps}
    \caption{Temperature dependence of the saturation magnetization (in $\mu_{B}$/Mn) of Ge$_{1-x}$Mn$_{x}$ films grown at 100$^{\circ}$C plotted for different Mn concentrations: 4 1 \%; 7 \%; 8 9 \% and 11 3 \% }
\label{fig8}
\end{figure}

ZFC-FC measurements show that the nanocolumns are superparamagnetic  The magnetic signal from the diluted Mn atoms in the matrix is too weak to be detected in susceptibility measurements at low temperature  In samples containing 4 \% of Mn, ZFC and FC curves superimpose down to low temperatures  As we do not observe hysteresis loops at low temperature, we believe that at this Mn concentration nanocolumns are  superparamagnetic in the whole temperature range and the blocking temperature cannot be measured  For higher Mn contents, the ZFC curve exhibits a very narrow peak with a maximum at the blocking temperature of 15 K whatever the Mn concentration and growth temperature (see Fig  7b)  Therefore the anisotropy barrier distribution is narrow and assuming that nanocolumns have the same magnetic anisotropy, this is a consequence of the very narrow size distribution of the nanocolumns as observed by TEM  To probe the anisotropy barrier distribution, we have performed ZFC-FC measurements but instead of warming the sample up to 400 K, we stopped at a lower temperature $T_{0}$  

\begin{figure}[htb]
\center
   \includegraphics[width= 6\linewidth]{ /fig9 eps}
\caption{Schematic drawing of the anisotropy barrier distribution n($E_{B}$) of superparamagnetic nanostructures  If magnetic anisotropy does not depend on the particle size, this distribution exactly reflects their magnetic size distribution  In this drawing the blocking temperature ($T_{B}$) corresponds to the distribution maximum  At a given temperature $T_{0}$ such that 25$k_{B}T_{0}$ falls into the anisotropy barrier distribution, the largest nanostructures with an anisotropy energy larger than 25$k_{B}T_{0}$ are blocked whereas the others are superparamagnetic }
\label{fig9}
\end{figure}

If this temperature falls into the anisotropy barrier distribution as depicted in Fig  9, the FC curve deviates from the ZFC curve  Indeed the smallest nanostructures have become superparamagnetic at $T_{0}$ and when decreasing again the temperature, their magnetization freezes along a direction close to the magnetic field and the FC susceptibility is higher than the ZFC susceptibility  Therefore any irreversibility in this procedure points at the presence of superparamagnetic nanostructures  The results are given in Fig  10a  ZFC and FC curves clearly superimpose up to $T_{0}$=250 K thus the nanocolumns are superparamagnetic up to their Curie temperature and no Ge$_{3}$Mn$_{5}$ clusters could be detected  Moreover for low $T_{0}$ values, a peak appears at low temperature in FC curves which evidences strong antiferromagnetic interactions between the nanocolumns \cite{Chan00} 

\begin{figure}[htb]
\center
    \includegraphics[width= 35\linewidth]{ /fig10a eps}
    \includegraphics[width= 63\linewidth]{ /fig10b eps}
\caption{(a) ZFC-FC measurements performed on a Ge$_{0 887}$Mn$_{0 113}$ sample grown at 115$^{\circ}$C  The in-plane applied field is 0 015 T  Magnetization was recorded up to different T$_{0}$ temperatures: 30 K, 50 K, 100 K, 150 K, 200 K and 250 K  Curves are shifted up for more clarity  (b) ZFC-FC curves for in-plane and out-of-plane applied fields (0 015 T) }
\label{fig10}
\end{figure}

In order to derive the magnetic size and anisotropy of the Mn-rich nanocolumns embedded in the Ge matrix, we have fitted the inverse normalized in-plane (resp  out-of-plane) susceptibility: $\chi_{\parallel}^{-1}$ (resp  $\chi_{\perp}^{-1}$)  The corresponding experimental ZFC-FC curves are reported in Fig  10b  Since susceptibility measurements are performed at low field (0 015 T), the matrix magnetic signal remains negligible  In order to normalize susceptibility data, we need to divide the magnetic moment by the saturated magnetic moment recorded at 5 T  However the matrix magnetic signal becomes very strong at 5 T and low temperature so that we need to subtract it from the saturated magnetic moment using a simple Curie function  From Fig  10b, we can conclude that nanocolumns are isotropic  Therefore to fit experimental data we use the following expression well suited for isotropic systems or cubic anisotropy: $\chi_{\parallel}^{-1}= \chi_{\perp}^{-1}\approx 3k_{B}T/M(T)+\mu_{0}H_{eff}(T)$  $k_{B}$ is the Boltzmann constant, $M=M_{s}v$ is the magnetic moment of a single-domain nanostructure (macrospin approximation) where $M_{s}$ is its magnetization and $v$ its volume  The in-plane magnetic field is applied along $[110]$ or $[-110]$ crystal axes  Since the nanostructures Curie temperature does not exceed 170 K, the temperature dependence of the saturation magnetization is also accounted for by writting $M(T)$  Antiferromagnetic interactions between nanostructures are also considered by adding an effective field estimated in the mean field approximation \cite{Fruc02}: $\mu_{0}H_{eff}(T)$ 
The only fitting parameters are the maximum magnetic moment (\textit{i e } at low temperature) per nanostructure: $M$ (in Bohr magnetons $\mu_{B}$) and the maximum interaction field (\textit{i e } at low temperature): $\mu_{0}H_{eff}$ 

\begin{figure}[htb]
\center
   \includegraphics[width= 7\linewidth]{ /fig11 eps}
\caption{Temperature dependence of the inverse in-plane (open circles) and out-of-plane (open squares) normalized susceptibilities of a Ge$_{0 887}$Mn$_{0 113}$ sample grown at 115$^{\circ}$C  Fits were performed assuming isotropic nanostructures or cubic anisotropy  Dashed line is for in-plane susceptibility and solid line for out-of-plane susceptibility }
\label{fig11}
\end{figure}

In Fig  11, the best fits lead to $M\approx$1250 $\mu_{B}$ and $\mu_{0}H_{eff}\approx$102 mT for in-plane susceptibility and $M\approx$1600 $\mu_{B}$ and $\mu_{0}H_{eff}\approx$98 mT for out-of-plane susceptibility  It gives an average magnetic moment of 1425 $\mu_{B}$ per column and an effective interaction field of 100 mT  Using this magnetic moment and its temperature dependence, magnetization curves could be fitted using a Langevin function and $M(H/T)$ curves superimpose for $T<$100 K  However, from the saturated magnetic moment of the columns and their density (35000 $\rm{\mu m}^{-2}$), we find almost 6000 $\mu_{B}$ per column  Therefore, for low growth temperatures, we need to assume that nanocolumns are actually made of almost four independent elongated magnetic nanostructures  The effective field for antiferromagnetic interactions between nanostructures estimated from the susceptibility fits is at least one order of magnitude larger than what is expected from pure magnetostatic coupling  This difference may be due to either an additional antiferromagnetic coupling through the matrix which origin remains unexplained or to the mean field approximation which is no more valid in this strong coupling regime  As for magnetic anisotropy, the nanostructures behave as isotropic magnetic systems or exhibit a cubic magnetic anisotropy  First we can confirm that nanostructures are not amorphous otherwise shape anisotropy would dominate leading to out-of-plane anisotropy  We can also rule out a random distribution of magnetic easy axes since the nanostructures are clearly crystallized in the diamond structure and would exhibit at least a cubic anisotropy (except if the random distribution of Mn atoms within the nanostructures can yield random easy axes)  Since the nanostructures are in strong in-plane compression (their lattice parameter is larger than the matrix one), the cubic symmetry of the diamond structure is broken and magnetic cubic anisotropy is thus unlikely  We rather believe that out-of-plane shape anisotropy is nearly compensated by in-plane magnetoelastic anisotropy due to compression leading to a \textit{pseudo} cubic anisotropy  From the blocking temperature (15 K) and the magnetic volume of the nanostructures , we can derive their magnetic anisotropy constant using $Kv=25k_{B}T_{B}$: K$\approx$10 kJ m$^{-3}$ which is of the same order of magnitude as shape anisotropy 

\begin{figure}[htb]
\center
    \includegraphics[width= 35\linewidth]{ /fig12a eps}
    \includegraphics[width= 63\linewidth]{ /fig12b eps} 
\caption{(a) ZFC-FC measurements performed on a Ge$_{0 93}$Mn$_{0 07}$ sample grown at 122$^{\circ}$C  The in-plane applied field is 0 015 T  Magnetization was recorded up to different T$_{0}$ temperatures: 50 K, 100 K, 150 K, 200 K and 250 K  Curves are shifted up for more clarity  (b) ZFC-FC curves for in-plane and out-of-plane applied fields  (0 015 T) }
\label{fig12}
\end{figure}

For growth temperatures $T_{g}\geq$120$^{\circ}$C and Mn concentrations $\geq$ 7 \%, samples exhibit a magnetic signal above 200 K corresponding to Ge$_{3}$Mn$_{5}$ clusters (see Fig  7a)  As we can see, SQUID measurements are much more sensitive to the presence of Ge$_{3}$Mn$_{5}$ clusters, even at low concentration, than TEM and x-ray diffraction used in section \ref{structural}  We also observe a sharp transition in the ZFC curve (see Fig  7b, Fig  12a and 12b): the peak becomes very large and is shifted towards high blocking temperatures (the signal is maximum at $T=$23 K)  This can be easily understood as a magnetic percolation of the four independent nanostructures obtained at low growth temperatures into a single magnetic nanocolumn  Therefore the magnetic volume increases sharply as well as blocking temperatures  At the same time, the size distribution widens as observed in TEM  In Fig  12a, we have performed ZFC-FC measurements at different $T_{0}$ temperatures  The ZFC-FC irreversibility is observed up to the Curie temperature of $\approx$120 K meaning that a fraction of nanocolumns is ferromagnetic (\textit{i e } $T_{B}\geq T_{C}$) 
In Fig  12b, in-plane and out-of-plane ZFC curves nearly superimpose for $T\leq$150 K due to the isotropic magnetic behavior of the nanocolumns: in-plane magnetoelastic anisotropy is still compensating out-of-plane shape anisotropy  Moreover the magnetic signal above 150 K corresponding to Ge$_{3}$Mn$_{5}$ clusters that start to form in this growth temperature range is strongly anisotropic  This perpendicular anisotropy confirms the epitaxial relation: (0002) Ge$_{3}$Mn$_{5}$ $\parallel$ (002) Ge discussed in Ref \cite{Bihl06}  The magnetic easy axis of the clusters lies along the hexagonal $c$-axis which is perpendicular to the film plane 

\begin{figure}[ht]
\center
   \includegraphics[width= 35\linewidth]{ /fig13a eps}
   \includegraphics[width= 63\linewidth]{ /fig13b eps} 
\caption{(a) ZFC-FC measurements performed on a Ge$_{0 887}$Mn$_{0 113}$ sample grown at 145$^{\circ}$C  The in-plane applied field is 0 015 T  Magnetization was recorded up to different T$_{0}$ temperatures: 50 K, 100 K, 150 K, 200 K, 250 K and 300 K  Curves are shifted up for more clarity  (b) ZFC-FC curves for in-plane and out-of-plane applied fields (0 015 T) }
\label{fig13}
\end{figure}

For growth temperatures $T_{g}\geq$145$^{\circ}$C the cluster magnetic signal dominates (Fig  13b)  Superparamagnetic nanostructures are investigated performing ZFC-FC measurements at different $T_{0}$ temperatures (Fig  13a)  The first ZFC peak at low temperature \textit{i e } $\leq$ 150 K is attributed to  low-$T_{C}$ nanocolumns ($T_{C}\approx$130 K)  This peak is wider than for lower growth temperatures and its maximum is further shifted up to 30 K  These results are in agreement with TEM observations: increasing $T_{g}$ leads to larger nanocolumns (\textit{i e } higher blocking temperatures) and wider size distributions  ZFC-FC irreversibility is observed up to the Curie temperature due to the presence of ferromagnetic columns  The second peak above 180 K in the ZFC curve is attributed to Ge$_{3}$Mn$_{5}$ clusters and the corresponding ZFC-FC irreversibility persisting up to 300 K means that some clusters are ferromagnetic  We clearly evidence the out-of-plane anisotropy of Ge$_{3}$Mn$_{5}$ clusters and the isotropic magnetic behavior of nanocolumns (Fig  13b)  In this growth temperature range, we have also investigated the Mn concentration dependence of magnetic properties  

\begin{figure}[ht]
\center
    \includegraphics[width= 49\linewidth]{ /fig14a eps}
    \includegraphics[width= 49\linewidth]{ /fig14b eps} 
\caption{Temperature dependence of the saturation magnetization (in $\mu_{B}$/Mn) of Ge$_{1-x}$Mn$_{x}$ films grown at 150$^{\circ}$C plotted for different Mn concentrations: 2 3 \%; 4 \%; 7 \%; 9 \%; 11 3 \%  (b) ZFC-FC measurements performed on Ge$_{1-x}$Mn$_{x}$ films grown at 150$^{\circ}$C  The in-plane applied field is 0 025 T for 2 3 \% and 4 \% and 0 015 T for 8 \% and 11 3 \%  }
\label{fig14}
\end{figure}

In Fig  14a, for low Mn concentrations (2 3 \% and 4 \%) the contribution from diluted Mn atoms in the germanium matrix to the saturation magnetization is very high and nearly vanishes for higher Mn concentrations (7 \%, 9 \% and 13 \%) as observed for low growth temperatures  Above 7 \%, the magnetic signal mainly comes from nanocolumns and Ge$_{3}$Mn$_{5}$ clusters  We can derive more information from ZFC-FC measurements (Fig  14b)  Indeed, for 2 3 \% of Mn, ZFC and FC curves nearly superimpose down to low temperature meaning that nanocolumns are superparamagnetic in the whole temperature range  Moreover the weak irreversibility arising at 300 K  means that some Ge$_{3}$Mn$_{5}$ clusters have already formed in the samples even at very low Mn concentrations  For 4 \% of Mn, we can observe a peak with a maximum at the blocking temperature (12 K) in the ZFC curve  We can also derive the Curie temperature of nanocolumns: $\approx$45 K  The irresversibility arising at 300 K still comes from Ge$_{3}$Mn$_{5}$ clusters  Increasing the Mn concentration above 7 \% leads to: higher blocking temperatures (20 K and 30 K) due to larger nanocolumns and wider ZFC peaks due to wider size distributions in agreement with TEM observations (see Fig  3a)  Curie temperatures also increase (110 K and 130 K) as well as the contribution from Ge$_{3}$Mn$_{5}$ clusters \\
Finally when increasing $T_{g}$ above 160$^{\circ}$C, the nanocolumns magnetic signal vanishes and only Ge$_{3}$Mn$_{5}$ clusters and diluted Mn atoms coexist  The overall magnetic signal becomes comparable to the one measured on annealed samples in which only Ge$_{3}$Mn$_{5}$ clusters are observed by TEM (see Fig  7a) \\
The magnetic properties of high-$T_{C}$ nanocolumns obtained for $T_{g}$ close to 130$^{\circ}$C are discussed in detail in Ref \cite{Jame06} \\
In conclusion, at low growth temperatures ($T_{g}\leq$120$^{\circ}$C), nanocolumns are made of almost 4 independent elongated magnetic nanostructures  For $T_{g}\geq$120$^{\circ}$C, these independent nanostructures percolate into a single nanocolumn sharply leading to higher blocking temperatures  Increasing $T_{g}$ leads to larger columns with a wider size distribution as evidenced by ZFC-FC measurements and given by TEM observations  In parallel, some Ge$_{3}$Mn$_{5}$ clusters start to form and their contribution increases when increasing $T_{g}$  Results on magnetic anisotropy seems counter-intuitive  Indeed Ge$_{3}$Mn$_{5}$ clusters exhibit strong out-of-plane anisotropy whereas nanocolumns which are highly elongated magnetic structures are almost isotropic  This effect is probably due to compensating in-plane magnetoelastic coupling (due to the columns compression) and out-of-plane shape anisotropy  

\section{Conclusion}

In this paper, we have investigated the structural and magnetic properties of thin Ge$_{1-x}$Mn$_{x}$ films grown by low temperature molecular beam epitaxy  A wide range of growth temperatures and Mn concentrations have been explored  All the samples contain Mn-rich nanocolumns as a consequence of 2D-spinodal decomposition  However their size, crystalline structure and magnetic properties depend on growth temperature and Mn concentration  For low growth temperatures, nanocolumns are very small (their diameter ranges between 1 8 nm for 1 3 \% of Mn and 2 8 nm for 11 3 \% of Mn), their Curie temperature is rather low ($<$ 170 K) and they behave as almost four uncorrelated superparamagnetic nanostructures  Increasing Mn concentration leads to higher columns densities while diameters remain nearly unchanged  For higher growth temperatures, the nanocolumns mean diameter increases and their size distribution widens  Moreover the 4 independent magnetic nanostructures percolate into a single magnetic nanocolumn  Some columns are ferromagnetic even if Curie temperatures remain quite low  In this regime, increasing Mn concentration leads to larger columns while their density remains nearly the same  In parallel, Ge$_{3}$Mn$_{5}$ nanoclusters start to form in the film with their $c$-axis perpendicular to the film plane  In both temperature regimes, the Mn incorporation mechanism in the nanocolumns and/or in the matrix changes above 5 \% of Mn and nanocolumns exhibit an isotropic magnetic behaviour due to the competing effects of out-of-plane shape anisotropy and in-plane magnetoelastic coupling  Finally for a narrow range of growth temperatures around 130$^{\circ}$C, nanocolumns exhibit Curie temperatures higher than 400 K  Our goal is now to investigate the crystalline structure inside the nanocolumns, in particular the position of Mn atoms in the distorted diamond structure, which is essential to understand magnetic and future transport properties in Ge$_{1-x}$Mn$_{x}$ films 

\section{Aknowledgements}
The authors would like to thank Dr  F  Rieutord for grazing incidence x-ray diffraction measurements performed on the GMT station of BM32 beamline at the European Synchrotron Radiation Facility 





ground_truth: 1425 $\mu_{B}$.