陈志权

武汉大学物理科学与技术学院教授
陈志权，毕业于武汉大学，博士、武汉大学物理科学与技术学院教授。
人物经历
学习经历
1987.9—1991.7 武汉大学物理系本科。
1991.9—1993.7 武汉大学物理系硕士研究生（提前攻博）。
1993.9—1996.7复旦大学物理二系博士研究生。
1996.9—1998.7武汉大学物理科学与技术学院博士后。
工作履历
1998.7—1999.5 武汉大学物理科学与技术学院 副教授。
1999.5—1999.11 日本筑波大学物理工学系外国人研究员。
2000.2—2002.2日本学术振兴会（JSPS）外国人特别研究员（ID: P99261）。
2002.6—2005.6 日本原子力研究所研究员（JAERI Research fellow）。
2005.12—武汉大学物理科学与技术学院教授。
研究方向
1、半导体材料d0铁磁性与缺陷间的关系。
2、铝合金时效过程中的缺陷演变及析出相结构。
3、热电材料微结构与热电性能研究。
4、多孔催化剂孔结构及化学环境。
主要贡献
科研项目
1．用慢正电子技术研究半导体表面界面缺陷 湖北省自然科学基金 2.0万元 主持 顺利结题
2．用正电子湮没研究重掺杂半导体载流子饱和的微观机制 武汉大学自强基金 3.0万元 主持 顺利结题
3．宽禁带半导体ZnO电子辐照引入缺陷及其回复研究 湖北省杰出青年基金 10万元 主持 顺利结题
4．半导体缺陷的正电子谱学研究 教育部青年骨干教师基金 12万元 主持 顺利结题
5．沸石中半导体纳米团簇材料的正电子研究国家自然科学基金20万元 主持 顺利结题
6．ZnO中离子注入掺杂引入缺陷及其对电学和磁学性能的影响 国家自然科学基金 45万元 主持 顺利结题
7．材料缺陷结构三维分布的正电子显像 973预研 38万元 主持 顺利结题
8．ZnO中缺陷的形成机制及其对材料光学电学性能影响的研究 教育部新世纪优秀人才支持计划 50万元 主持 顺利结题
9．用正电子湮没二维多普勒展宽谱研究铝合金时效过程中纳米析出物的微结构 国家自然科学基金 50万元 主持 顺利结题
10．用正电子湮没谱学研究热电材料的缺陷及其对热电性能的影响 国家自然科学基金 90万元 主持 正在进行
11．多孔催化剂孔结构及表面活性物质分散状态的正电子湮没研究 国家自然科学基金 96万元 主持 正在进行
发表论文
自1993年以来，共发表SCI论文90余篇。H-index: 16。近期发表的部分论文如下：
[1]X. F. Li, B. Zhao, T. Zhang, H. F. He, Q. Zhang, D. W. Yang, Z. Q. Chen*, X. F. Tang, Order-disorder transition in clathrate Ba6Ge25studied by positronannihilation. Applied Surface Science, 342, 42-46 (2015)
[2]N. Qi, Z. Q. Chen*, A. Uedono, Molecular motion and relaxation below glass transition temperature in poly (methyl methacrylate) studied by positron annihilation. Radiation Physics & Chemistry, 108, 81-86 (2015)
[3]T. Zhang, K. Zhou, X. F. Li, Z. Q. Chen*, X. L. Su and X. F. Tang, Structural transition of partially Ba-filled thermoelectric CoSb3 investigated by positron annihilation spectroscopy. Journal of Applied Physics 117, 055103 (2015)
[4]X. F. Li, Z. Q. Chen*, C. Liu, H. J. Zhang and A. Kawasuso, Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam. Journal of Applied Physics 117, 085706 (2015)
[5]H. F. He, X. F. Li, Z. Q. Chen*, Y. Zheng, D. W. Yang, and X. F. Tang, Interplay between Point Defects and Thermal Conductivity of Chemically Synthesized Bi2Te3 Nanocrystals Studied by Positron Annihilation. Journal of Physical Chemistry C 118, 22389-22394 (2014)
[6]T. Li, D. W. Liu, H. Y. Dai, H. W. Xiang, Z. P. Chen, H. F. He, Z. Q. Chen, Effect of defect on the nonlinear and dielectric property of Ca(1–x)SrxCu3Ti4O12 ceramics synthesized by sol–gel process. Journal of Alloys and Compounds, 599, 145-149 (2014)
[7]M. Jiang, X. D. Xue, Z. Q. Chen*, Y. D. Liu, H. W. Liang, H. J. Zhang, A. Kawasuso, Defects and acceptor centers in ZnO introduced by C+-implantation. Journal of Materials Science, 49, 1994-1999 (2014)
[8]M. Jiang, L. L. Liu, Z. Wang, Z. Q. Chen*, Microstructure of ZnO-Li2CO3 compound studied by positron annihilation spectroscopy. Physca Status Solidi (a) 211, 206-212 (2014)
[9]Z. W. Liu, H. J. Zhang, Z. Q. Chen*, Monolayer dispersion of CoO on Al2O3 probed by positronium atom. Applied Surface Science, 293, 326-331 (2014)
[10]B. Zou, Z.Q. Chen*, C.H. Liu, J.H. Chen, Microstructure evolution of heavily deformed AA5083 Al–Mg alloy studied by positron annihilation spectroscopy. Applied Surface Science, 296, 154-157 (2014)
[11]B. Zou, Z.Q. Chen*, C.H. Liu, J.H. Chen, Vacancy–Mg complexes and their evolution in early stages of aging of Al–Mg based alloys. Applied Surface Science, 298, 50-55 (2014)
[12]D. D. Wang, N. Qi, M. Jiang, Z. Q. Chen*, Defects versus grain size effects on the ferromagnetism of ZrO2 nanocrystals clarified by positron annihilation, Applied Physics Letters, 102, 042407 (2013).
[13]M. Jiang, D. D. Wang, Z. Q. Chen*, S. Kimura, Y. Yamashita, A. Mori, and A. Uedono, Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam, Journal of Applied Physics, 113, 043506 (2013)
[14]C. Y. Li, H. J. Zhang, Z. Q. Chen*, Reaction between NiO and Al2O3 in NiO/r-Al2O3 catalysts probed by positronium atom, Applied Surface Science, 266, 17-21 (2013)
[15]Qi Ning, Jia Yan-Lin, Liu Hui-Qun, Yi Dan-Qing, Z. Q. Chen*, Evolution of Defects in Deformed Cu-Ni-Si Alloys during Isochronal Annealing Studied by Positron Annihilation, Chinese Physics Letters, 29, 127803 (2012)
[16]H. J. Zhang, Z. Q. Chen*, and S. J. Wang, Monolayer dispersion of NiO in NiO/Al2O3 catalysts probed by positronium atom, Journal of Chemical Physics, 136, 034701 (2012)
[17]M. Jiang, D. D. Wang, B. Zou, Z. Q. Chen*, A. Kawasuso, and T. Sekiguchi, Effect of high temperature annealing on defects and optical properties of ZnO single crystals, Phys. Status Solidi A 11, 2126 (2012)
[18]Zhi-Yuan Chen, Z. Q. Chen*, B. Zou, X. G. Zhao, Z. Tang, and S. J. Wang, Defect mediated ferromagnetism in Ni-doped ZnO nanocrystals evidenced by positron annihilation spectroscopy, Journal of Applied Physics, 112, 083905 (2012)
[19]D. D. Wang, Z. Q. Chen*, C. Y. Li, X. F. Li, C. Y. Cao, Z. Tang, Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation, Physica B: Condensed Matter, 407, 2665-2669 (2012)(他引1次)
[20]S. H. Huang, Z. Q. Chen*, H. J. Zhang, Three-gamma annihilation of ortho-positronium in NiO/γ-Al2O3 catalysts detected by positron lifetime and coincidence Doppler broadening measurements, Radiation Physics and Chemistry, 81, 791-795 (2012)
[21]Zhang Hong-Jun, Liu Zhe-Wen, Z. Q. Chen*, S. J. Wang, Chemical Quenching of Positronium in CuO/Al2O3 Catalysts, Chinese Physics letters, 28, 017802 (2011)
[22]Qi Ning, Wang Yuan-Wei, Wang Dong, Wang Dan-Dan, Z. Q. Chen*, Positron annihilation study of the microstructure of Co doped ZnO nanocrystals, Acta Phys. Sin. 60, 107805 (2011))(他引2次)
[23]Zhi-Yuan Chen, Z. Q. Chen*, D. D. Wang, S. J. Wang, Correlation between interfacial defects and ferromagnetism of BaTiO3 nanocrystals studied by positron annihilation, Applied Surface Science, 258, 19-23 (2011)(他引4次)
[24]Dong Wang, Z. Q. Chen*, D. D. Wang, J. Gong, C.Y. Cao, Z. Tang, L.R. Huang, Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction, Journal of Magnetism and Magnetic Materials, 322, 3642-3647 (2010)(他引7次)
[25]C. Li, H.J. Zhang, Z. Q. Chen*, Chemical quenching of positronium in Fe2O3/Al2O3 catalysts, Applied Surface Science, 256, 6801-6804 (2010)
[26]H. J. Zhang, Z. Q. Chen*, S. J. Wang, A. Kawasuso and N. Morishita, Spin conversion of positronium in NiO/Al2O3 catalysts observed by coincidence Doppler broadening technique, Phys. Rev. B 82, 035439 (2010)
[27]D. Wang, Z. Q. Chen*, D. D. Wang, N. Qi, J. Gong, C. Y. Cao, and Z. Tang, Positron Annihilation study of the interfacial defects in ZnO nanocrystals: Correlation with ferromagnetism, J. Appl. Phys. 107, 023524 (2010)(他引25次)
[28]D. Wang, Z. Q. Chen*, F. Zhou, W. Lu, M. Maekawa, A. Kawasuso, Ferromagnetism and microstructure in Fe+-implanted ZnO, Applied Surface Science, 255, 9371-9375 (2009)(他引3次)
[29]Z. Q. Chen, K. Betsuyaku, A. Kawasuso, Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation, Phys. Rev. B 77, 113204 (2008)(他引16次)
[30]Z. Q. Chen, M. Maekawa, A. Kawasuso, and H. Naramoto, Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam, Phys. Stat. Sol. (c) 4, 3646 (2007)(他引1次)
[31]X. Q. Meng, Z. Q. Chen, P. Jin, Z. G. Wang, and Long Wei, Defects around self-organized InAs quantum dots measured by slow positron beam, Appl. Phys. Lett. 91, 093510 (2007)(他引4次)
[32]Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. Sekiguchi, Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation, Phys. Rev. B 75, 245206 (2007)(他引37次)
[33]Z. Q. Chen, A. Kawasuso, Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam, Acta Phys. Sin. 55, 4353 (2006)(他引1次)
[34]Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species, J. Appl. Phys. 99, 093507 (2006)(他引33次)
[35]Z. Q. Chen, M. Maekawa, A. Kawasuso Energy Variable Slow Positron Beam Study of Li+-Implantation-Induced Defects in ZnO, Chinese Physics Letters, 23, 675 (2006)(他引3次)
[36]Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, Electron Irradiation Induced Defects in ZnO Studied by Positron Annihilation, Physica B 376-377, 722 (2006)(他引12次)
[37]Z. Q. Chen, M. Maekawa, A. Kawasuso, R. Suzuki, and T. Ohdaira, Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam. Appl. Phys. Lett. 87, 091910 (2005)(他引18次)
[38]Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam. Phys. Rev. B71, 115213 (2005)(他引54次)
[39]Z. Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, and T. Sekiguchi, Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition. Appl. Surf. Sci. 244, 377 (2005)(他引14次)
[40]Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Production and recovery of defects in phosphorus implanted ZnO. J. Appl. Phys. 97, 013528 (2005)(他引93次)
[41]Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Evolution of voids in Al+-implanted ZnO probed by a slow positron beam. Phys. Rev. B69, 035210(2004)(他引56次)
[42]Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki and A. Kawasuso, Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam. Material Science Forum, Vol.445-446, 57(2004)(他引3次)
[43]Z. Q. Chen, T. Sekiguchi, X. L. Yuan, M. Maekawa, and A. Kawasuso, N+ ion-implantation induced defects in ZnO studied by slow positron beam. J.Phys.:Condens.Matter, 16, S293(2004)(他引16次)
[44]Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan and T. Sekiguchi, Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodoluminescence and Hall measurements. J. Appl. Phys. 94, 4807(2003)(他引101次)
[45]Z. Q. Chen, A. Uedono, T. Suzuki and J.S. He, Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends. J. Radioanal.& Nucl. Chem., Vol.255, no.2, 291-294(2003)(他引6次)