Task: Translation
Input (Czech): Polovodicová výkonová soucástka (1) je provedena s RESURF-oblastí (4) usporádanou mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3), s alespon jedním polysiliciovým odporem (5) mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3), pricemž polysiliciový odpor (5) je usporádán nad RESURF-oblastí (4) a je od této RESURF-oblasti (4) elektricky izolován. Polysiliciový odpor (5) je meandrovite veden z vysokonapetové strany (2) do nízkonapetové strany (3) pro prenos signálu mezi vysokonapetovou stranou (2) a nízkonapetovou stranou (3).
Output (English): In the present invention, there is disclosed a semiconductor power component (1) having a reduced surface field (RESURF) region (4) disposed between the high-pressure side (2) and the low-pressure side (3), characterized in that at least one polysilicon resistor (5) for signal transmission is provided between the high-pressure side (2) and the low-pressure side (3); that the polysilicon resistor (5) is disposed above the RESURF region (4); that the polysilicon resistor (5) is electrically insulated from the RESURF region (4); and that the polysilicon resistor (5) is laid in a meandering pattern from the high-pressure side (2) to the low-pressure side (3) for signal transmission between the high-pressure side (2) and the low-pressure side (3).