* Z:\home\khalils\Downloads\files\data\raw_asc\2d0a26d20cfb_crow_22nm_mra_write_power.asc
* Generated by LTspice 26.0.1 for Windows.
* Bitline to array0
* Bitline to array1
* Plot Eq, ra0, ra1, bitline0+1.25, bitline1+1.25, sense_n+2.5, and sense_p+3.75
* Word line in array 0
* Word line in array 1
* .step param X 0.0v 1.5v 0.1v
* Word line in array 1
* DRAM Circuit Parameters
* ohm
* Bitline Resistance
* Cell Array
* Sense Amp.
* Voltage
* Word line in array 1
* Word line in array 1
* Word line in array 1
* Word line in array 1
* Word line in array 1
* Word line in array 1
* Wordline Activation
* 1 -> 45 nm, 4 -> 32nm, 7 -> 22 nm, 9-> 16nm
* Technology Scaling
* Wordline Parasitics
* Write Logic
* write_driver_inv
* write_driver
VDD_source1 PV 0 {plate_voltage}
M23 N003 write0 0 0 NMOS l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
Vra1 ra1 0 PULSE(0 {mc(wordline_voltage*wl1_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
Vwrite1 write1 0 PULSE(0 {wr1_voltage} 5n) Rser=100 Cpar=1fF
M4 bitline1 Eq bitline0 0 NMOS l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W, process_var)}
cell_cap_1 mb1 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell1_charge}
M7 N001 ra0 mb0 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
Vwrite0 write0 0 PULSE(0 {wr0_voltage} 5n) Rser=100 Cpar=1fF
CBL_cap_0 N001 0 {mc(bitline_cap, process_var)} IC={core_voltage/2}
CBL_cap_1 N004 0 {mc(bitline_cap, process_var)} IC={core_voltage/2}
cell_cap_0 mb0 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell0_charge}
Vsn sense_N 0 PULSE(0 {core_voltage} {20n + nsense_act}) Rser=100 Cpar=1fF
cell_cap_3 mb2 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell2_charge}
Vra3 ra2 0 PULSE(0 {mc(wordline_voltage*wl2_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
M2 bitline1 bitline0 NLAT 0 NMOS l={mc(SA_nmos_L,process_var)} w={mc(SA_nmos_W, process_var)}
M1 NLAT sense_N 0 0 NMOS l={mc(SA_nset_L, process_var)} w={mc(SA_nset_W, process_var)}
M20 bitline1 CSEL N002 0 NMOS l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
M22 N002 write1 VDD VDD PMOS l={mc(SA_pWR_L, process_var)} w={mc(SA_pWR_W, process_var)}
M12 N001 ra1 mb1 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
Vra5 ra5 0 PULSE(0 {mc(wordline_voltage*wl4_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
Vra6 ra6 0 PULSE(0 {mc(wordline_voltage*wl5_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
cell_cap_7 mb7 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell6_charge}
M11 bitline0 bitline1 ACT VDD PMOS l={mc(SA_pmos_L, process_var)} w={mc(SA_pmos_W, process_var)}
cell_cap_6 mb6 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell5_charge}
cell_cap_2 mb3 0 {mc(cell_cap, process_var)}
M18 N001 ra8 mb8 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
M13 N001 ra2 mb2 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
cell_cap_5 mb5 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell4_charge}
Vsp sense_P 0 PULSE({core_voltage} 0 {20n + psense_act}) Rser=100 Cpar=1fF
Vra8 ra8 0 PULSE(0 {mc(wordline_voltage*wl7_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
Vra7 ra7 0 PULSE(0 {mc(wordline_voltage*wl6_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
cell_cap_4 mb4 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell3_charge}
M14 N001 ra4 mb4 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
R1 N001 bitline0 {mc(bitline_R, process_var)}
M16 N001 ra6 mb6 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
VDD_source2 VDDby2 0 {core_voltage/2}
VDD_source VDD 0 {core_voltage}
M9 ACT sense_p VDD VDD PMOS l={mc(SA_pset_L, process_var)} w={mc(SA_pset_W, process_var)}
M17 N001 ra7 mb7 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
R2 bitline1 N004 {mc(bitline_R, process_var)}
Veq Eq 0 PULSE(0 {core_voltage*1.2} 0 0 0 14n)
M6 VDDby2 Eq bitline1 0 NMOS l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W,process_var)}
M24 N003 write0 VDD VDD PMOS l={mc(SA_pWR_L, process_var)} w={mc(SA_pWR_W, process_var)}
Vra4 ra4 0 PULSE(0 {mc(wordline_voltage*wl3_act, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
Vra2 ra3 0 PULSE(0 {mc(0, process_var)} {other_wls_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
M5 bitline0 Eq VDDby2 0 NMOS l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W,process_var)}
M21 N002 write1 0 0 NMOS l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
M8 N004 ra3 mb3 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
M19 bitline0 CSEL N003 0 NMOS l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
Vcsel CSEL 0 PULSE(0 {core_voltage*2} {20n + csel_act}) Rser=100 Cpar=1fF
cell_cap_8 mb8 PV {mc(cell_cap, process_var)} IC={-plate_voltage + cell7_charge}
M3 bitline0 bitline1 NLAT 0 NMOS l={mc(SA_nmos_L,process_var)} w={mc(SA_nmos_W,process_var)}
M15 N001 ra5 mb5 0 nmos_access_tran l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
Vra0 ra0 0 PULSE(0 {mc(wordline_voltage*wl0_act, process_var)} {wl0_act_time}) Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
M10 bitline1 bitline0 ACT VDD PMOS l={mc(SA_pmos_L, process_var)} w={mc(SA_pmos_W,process_var)}
.model NMOS NMOS
.model PMOS PMOS
.lib C:\users\khalils\AppData\Local\LTspice\lib\cmp\standard.mos
.include ../DRAM_models/transistor_model.pm
.tran 220ns uic
.param process_var=0.05
.step param run 1 100 1
.param cell_cap={16.7fF}
.param bitline_cap={83.5fF}
.param access_tran_L={85nm*access_tran_L_factor}
.param access_tran_W={55nm*access_tran_W_factor}
.param bitline_R=R_per_cell*cells_per_BL
.param R_per_cell=60
.param SA_nmos_L={160nm*SA_nmos_L_factor}
.param SA_nmos_W={1900nm*SA_nmos_W_factor}
.param SA_pmos_L={160nm*SA_pmos_L_factor}
.param SA_pmos_W={1330nm*SA_pmos_W_factor}
.param SA_eq_L=96.3nm
.param SA_eq_W=141nm
.param SA_nset_L={255nm*SA_nset_L_factor}
.param SA_nset_W={220nm*SA_nset_W_factor}
.param SA_pset_L={255nm*SA_pset_L_factor}
.param SA_pset_W={220nm*SA_pset_W_factor}
.param cells_per_BL=1024
.param core_voltage=1.1V
.param wordline_voltage=2.9V
.param cell0_charge=core_voltage*cell0_charge_state
.param cell1_charge=core_voltage*other_cells_charge_state
.param cell2_charge=core_voltage*other_cells_charge_state
.param cell3_charge=core_voltage*other_cells_charge_state
.param cell4_charge=core_voltage*other_cells_charge_state
.param cell5_charge=core_voltage*other_cells_charge_state
.param cell6_charge=core_voltage*other_cells_charge_state
.param cell7_charge=core_voltage*other_cells_charge_state
.param cell0_charge_state=0.8
.param pv_modifier=0.5
.param plate_voltage={core_voltage*pv_modifier}
.param psense_act=4ns
.param nsense_act=4ns
.param wl0_act=1.0
.param wl1_act=1.0
.param wl2_act=0.0
.param wl3_act=0.0
.param wl4_act=0.0
.param wl5_act=0.0
.param wl6_act=0.0
.param wl7_act=0.0
.param tech_node=7
.param cell_cap_factor={0.95**tech_node}
.param bl_cap_factor={0.95**tech_node}
.param access_tran_L_factor={0.95**tech_node}
.param access_tran_W_factor={0.85**tech_node}
.param SA_nmos_L_factor={0.93**tech_node}
.param SA_nmos_W_factor={0.93**tech_node}
.param SA_pmos_L_factor={0.93**tech_node}
.param SA_pmos_W_factor={0.93**tech_node}
.param SA_nset_L_factor={0.93**tech_node}
.param SA_nset_W_factor={0.93**tech_node}
.param SA_pset_L_factor={0.93**tech_node}
.param SA_pset_W_factor={0.95**tech_node}
.param wordline_C={WL_C_per_cell*cells_per_LWL}
.param WL_C_per_cell=0.07fF
.param cells_per_LWL=1024
.param WL_R_per_cell=40ohm
.param wordline_R={WL_R_per_cell*cells_per_LWL}
.param WL_cap_factor={0.95**tech_node}
.param WL_res_factor={0.95**tech_node}
.param wr0_voltage=0V
.param wr1_voltage=0V
.param other_cells_charge_state=0.8
.param wl0_act_time=20ns
.param other_wls_act_time=20ns
.param SA_nWR_L={70nm*SA_nWR_L_factor}
.param SA_nWR_W={840nm*SA_nWR_W_factor}
.param SA_nWR_L_factor={0.93**tech_node}
.param SA_nWR_W_factor={0.93**tech_node}
.param SA_pWR_L={70nm*SA_pWR_L_factor}
.param SA_pWR_W={840nm*SA_pWR_W_factor}
.param csel_act=400ns
.param SA_pWR_L_factor={0.93**tech_node}
.param SA_pWR_W_factor={0.93**tech_node}
.backanno
.end

* LTspice schematic (.asc):
Version 4
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WIRE 944 -240 944 -256
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WIRE 768 -224 624 -224
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WIRE 96 -192 32 -192
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SYMBOL cap 368 -1136 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_0
SYMATTR SpiceLine IC={-plate_voltage + cell0_charge}
SYMBOL pmos4 992 -528 M180
WINDOW 0 56 32 Invisible 2
WINDOW 3 56 72 Invisible 2
SYMATTR InstName M10
SYMATTR Value2 l={mc(SA_pmos_L, process_var)} w={mc(SA_pmos_W,process_var)}
SYMBOL nmos4 1760 -384 M0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M21
SYMATTR Value2 l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
SYMBOL voltage -208 -640 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR Value {plate_voltage}
SYMATTR InstName VDD_source1
SYMBOL voltage -1696 -1136 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vcsel
SYMATTR Value PULSE(0 {core_voltage*2} {20n + csel_act})
SYMATTR SpiceLine Rser=100 Cpar=1fF
SYMBOL voltage -608 -1168 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR SpiceLine Rser=100 Cpar=1fF
SYMATTR Value PULSE({core_voltage} 0 {20n + psense_act})
SYMATTR InstName Vsp
SYMBOL nmos4 992 -176 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M2
SYMATTR Value2 l={mc(SA_nmos_L,process_var)} w={mc(SA_nmos_W, process_var)}
SYMBOL nmos4 1392 -496 M90
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M20
SYMATTR Value2 l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
SYMBOL cap 448 -4560 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_8
SYMATTR SpiceLine IC={-plate_voltage + cell7_charge}
SYMBOL voltage -1408 -656 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR SpiceLine Rser=100 Cpar=1fF
SYMATTR Value PULSE(0 {wr1_voltage} 5n)
SYMATTR InstName Vwrite1
SYMBOL nmos4 416 -3472 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M15
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL cap 448 -1712 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_1
SYMATTR SpiceLine IC={-plate_voltage + cell1_charge}
SYMBOL cap 448 -3680 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_6
SYMATTR SpiceLine IC={-plate_voltage + cell5_charge}
SYMBOL voltage -1456 -1952 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra4
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl3_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL voltage -800 -2320 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra6
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl5_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL cap 816 -848 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(bitline_cap, process_var)}
SYMATTR InstName BL_cap_0
SYMATTR SpiceLine IC={core_voltage/2}
SYMBOL pmos4 640 -656 M180
WINDOW 0 56 32 Invisible 2
WINDOW 3 56 72 Invisible 2
SYMATTR InstName M9
SYMATTR Value2 l={mc(SA_pset_L, process_var)} w={mc(SA_pset_W, process_var)}
SYMBOL nmos4 1008 -368 M270
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M4
SYMATTR Value2 l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W, process_var)}
SYMBOL voltage -832 -1664 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra1
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl1_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL pmos4 880 -528 R180
WINDOW 0 56 32 Invisible 2
WINDOW 3 56 72 Invisible 2
SYMATTR InstName M11
SYMATTR Value2 l={mc(SA_pmos_L, process_var)} w={mc(SA_pmos_W, process_var)}
SYMBOL voltage -1776 -656 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR SpiceLine Rser=100 Cpar=1fF
SYMATTR Value PULSE(0 {wr0_voltage} 5n)
SYMATTR InstName Vwrite0
SYMBOL cap 448 -2224 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_3
SYMATTR SpiceLine IC={-plate_voltage + cell2_charge}
SYMBOL voltage -1456 -2592 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra7
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl6_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL cap 1184 320 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_2
SYMBOL cap 1344 -96 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(bitline_cap, process_var)}
SYMATTR InstName BL_cap_1
SYMATTR SpiceLine IC={core_voltage/2}
SYMBOL nmos4 416 -2464 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M13
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL res 1296 -320 R0
WINDOW 3 36 68 Left 2
SYMATTR Value {mc(bitline_R, process_var)}
SYMATTR InstName R2
SYMBOL voltage -1456 -2320 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra5
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl4_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL nmos4 880 -176 M0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M3
SYMATTR Value2 l={mc(SA_nmos_L,process_var)} w={mc(SA_nmos_W,process_var)}
SYMBOL nmos4 1152 160 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M8
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL voltage -800 -2624 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra8
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl7_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL voltage -512 -640 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR Value {core_voltage/2}
SYMATTR InstName VDD_source2
SYMBOL nmos4 672 -48 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M1
SYMATTR Value2 l={mc(SA_nset_L, process_var)} w={mc(SA_nset_W, process_var)}
SYMBOL voltage -240 -1168 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR SpiceLine Rser=100 Cpar=1fF
SYMATTR Value PULSE(0 {core_voltage} {20n + nsense_act})
SYMATTR InstName Vsn
SYMBOL pmos4 144 -240 M180
WINDOW 0 56 32 Invisible 2
WINDOW 3 56 72 Invisible 2
SYMATTR InstName M24
SYMATTR Value2 l={mc(SA_pWR_L, process_var)} w={mc(SA_pWR_W, process_var)}
SYMBOL voltage -800 -640 R0
WINDOW 123 0 0 Left 2
WINDOW 39 -71 197 Left 2
WINDOW 3 -71 169 Left 2
SYMATTR Value {core_voltage}
SYMATTR InstName VDD_source
SYMBOL nmos4 416 -1952 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M12
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL voltage -832 -1952 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra3
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl2_act, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL nmos4 416 -2976 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M14
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL voltage -1104 -1136 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 0 0 Left 2
SYMATTR InstName Veq
SYMATTR Value PULSE(0 {core_voltage*1.2} 0 0 0 14n)
SYMBOL nmos4 576 -1360 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M7
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL cap 448 -4128 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_7
SYMATTR SpiceLine IC={-plate_voltage + cell6_charge}
SYMBOL nmos4 416 -4800 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M18
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL cap 448 -2736 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_4
SYMATTR SpiceLine IC={-plate_voltage + cell3_charge}
SYMBOL nmos4 800 -352 M90
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M5
SYMATTR Value2 l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W,process_var)}
SYMBOL voltage -1392 -1664 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra0
SYMATTR Value PULSE(0 {mc(wordline_voltage*wl0_act, process_var)} {wl0_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL pmos4 1760 -496 R180
WINDOW 0 56 32 Invisible 2
WINDOW 3 56 72 Invisible 2
SYMATTR InstName M22
SYMATTR Value2 l={mc(SA_pWR_L, process_var)} w={mc(SA_pWR_W, process_var)}
SYMBOL nmos4 416 -3920 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M16
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL voltage -2624 -1968 R0
WINDOW 0 -72 21 Left 2
WINDOW 3 -99 147 Left 2
WINDOW 123 0 0 Left 2
WINDOW 39 -72 49 Left 2
SYMATTR InstName Vra2
SYMATTR Value PULSE(0 {mc(0, process_var)} {other_wls_act_time})
SYMATTR SpiceLine Rser={mc(wordline_R*WL_res_factor, process_var)} Cpar={mc(wordline_C*WL_cap_factor, process_var)}
SYMBOL nmos4 480 -240 R90
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M19
SYMATTR Value2 l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
SYMBOL res 752 -784 R0
WINDOW 3 36 68 Left 2
SYMATTR Value {mc(bitline_R, process_var)}
SYMATTR InstName R1
SYMBOL nmos4 976 -352 M90
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M6
SYMATTR Value2 l={mc(SA_eq_L,process_var)} w={mc(SA_eq_W,process_var)}
SYMBOL nmos4 416 -4368 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M17
SYMATTR Value nmos_access_tran
SYMATTR Value2 l={mc(access_tran_L,process_var)} w={mc(access_tran_W,process_var)}
SYMBOL cap 448 -3232 R0
WINDOW 3 41 47 Left 2
SYMATTR Value {mc(cell_cap, process_var)}
SYMATTR InstName cell_cap_5
SYMATTR SpiceLine IC={-plate_voltage + cell4_charge}
SYMBOL nmos4 144 -128 R0
WINDOW 0 104 24 Invisible 2
WINDOW 3 179 41 Invisible 2
SYMATTR InstName M23
SYMATTR Value2 l={mc(SA_nWR_L, process_var)} w={mc(SA_nWR_W, process_var)}
FLAG -1104 -1024 0
FLAG -1104 -1136 Eq
FLAG 720 0 0
FLAG -608 -1040 0
FLAG -608 -1184 sense_P
FLAG 1040 -128 0
FLAG 832 -128 0
FLAG 960 -416 0
FLAG 848 -304 0
FLAG 1024 -304 0
FLAG 640 -368 Eq
FLAG 944 -256 VDDby2
FLAG 416 32 sense_N
FLAG 720 48 0
FLAG 768 -320 bitline0
FLAG 1120 -288 bitline1
FLAG 624 -1312 0
FLAG 384 -1152 mb0
FLAG 304 -1280 ra0
FLAG 1200 208 0
FLAG 1200 384 0
FLAG 1200 304 mb3
FLAG 1088 272 ra3
FLAG -1392 -1552 0
FLAG -1392 -1664 ra0
FLAG 688 -704 VDD
FLAG 1040 -576 VDD
FLAG 832 -576 VDD
FLAG 688 -752 VDD
FLAG 432 -736 sense_p
FLAG 912 -656 ACT
FLAG 960 -48 NLAT
FLAG -240 -1040 0
FLAG -240 -1184 sense_N
FLAG -832 -1664 ra1
FLAG -832 -1552 0
FLAG 832 -784 0
FLAG 1360 -32 0
FLAG 464 -1904 0
FLAG 464 -1728 mb1
FLAG 304 -1872 ra1
FLAG -2624 -1968 ra3
FLAG -2624 -1856 0
FLAG -800 -512 0
FLAG -800 -656 VDD
FLAG -512 -512 0
FLAG -512 -656 VDDby2
FLAG -832 -1952 ra2
FLAG -832 -1840 0
FLAG 464 -2416 0
FLAG 464 -2240 mb2
FLAG 304 -2384 ra2
FLAG -1456 -1952 ra4
FLAG -1456 -1840 0
FLAG 464 -2928 0
FLAG 464 -2752 mb4
FLAG 304 -2896 ra4
FLAG -1456 -2320 ra5
FLAG -1456 -2208 0
FLAG 464 -3424 0
FLAG 464 -3248 mb5
FLAG 304 -3392 ra5
FLAG -800 -2320 ra6
FLAG -800 -2208 0
FLAG 464 -3872 0
FLAG 464 -3696 mb6
FLAG 304 -3840 ra6
FLAG -1456 -2592 ra7
FLAG -1456 -2480 0
FLAG 464 -4320 0
FLAG 464 -4144 mb7
FLAG 304 -4288 ra7
FLAG -800 -2624 ra8
FLAG -800 -2512 0
FLAG 464 -4752 0
FLAG 464 -4576 mb8
FLAG 304 -4720 ra8
FLAG 464 -4464 PV
FLAG 464 -4032 PV
FLAG 464 -3584 PV
FLAG 464 -3136 PV
FLAG 464 -2640 PV
FLAG 464 -2128 PV
FLAG 464 -1616 PV
FLAG 384 -976 PV
FLAG -208 -512 0
FLAG -208 -656 PV
FLAG 400 -288 CSEL
FLAG 432 -192 0
FLAG 1440 -448 0
FLAG -1776 -528 0
FLAG -1776 -672 write0
FLAG -1408 -528 0
FLAG -1408 -672 write1
FLAG 1712 -288 0
FLAG 1712 -544 VDD
FLAG 1712 -592 VDD
FLAG 1712 -336 0
FLAG 1472 -544 CSEL
FLAG 1872 -448 write1
FLAG 192 -32 0
FLAG 192 -288 VDD
FLAG 192 -336 VDD
FLAG 192 -80 0
FLAG 32 -192 write0
FLAG -1696 -1024 0
FLAG -1696 -1136 CSEL
TEXT -376 136 Left 2 !.include ../DRAM_models/transistor_model.pm
TEXT 800 -952 VLeft 2 ;Bitline to array0
TEXT 1296 96 VLeft 2 ;Bitline to array1
TEXT -448 104 Left 2 !.tran 220ns uic
TEXT -392 216 Left 2 ;Plot Eq, ra0, ra1, bitline0+1.25, bitline1+1.25, sense_n+2.5, and sense_p+3.75
TEXT 48 -1296 Left 2 ;Word line in array 0
TEXT 832 256 Left 2 ;Word line in array 1
TEXT -368 168 Left 2 ;.step param X 0.0v 1.5v 0.1v
TEXT 48 -1888 Left 2 ;Word line in array 1
TEXT -832 80 Left 2 !.param process_var=0.05
TEXT -832 40 Left 2 !.step param run 1 100 1
TEXT -832 456 Left 2 !.param cell_cap={16.7fF}
TEXT -832 496 Left 2 !.param bitline_cap={83.5fF}
TEXT -920 168 Left 2 ;DRAM Circuit Parameters
TEXT -832 536 Left 2 !.param access_tran_L={85nm*access_tran_L_factor}
TEXT -832 576 Left 2 !.param access_tran_W={55nm*access_tran_W_factor}
TEXT -816 1584 Left 2 !.param bitline_R=R_per_cell*cells_per_BL
TEXT -576 1520 Left 2 ;ohm
TEXT -816 1520 Left 2 !.param R_per_cell=60
TEXT -816 1488 Left 2 ;Bitline Resistance
TEXT -824 976 Left 2 !.param SA_nmos_L={160nm*SA_nmos_L_factor}
TEXT -824 1000 Left 2 !.param SA_nmos_W={1900nm*SA_nmos_W_factor}
TEXT -824 1032 Left 2 !.param SA_pmos_L={160nm*SA_pmos_L_factor}
TEXT -824 1056 Left 2 !.param SA_pmos_W={1330nm*SA_pmos_W_factor}
TEXT -824 1096 Left 2 !.param SA_eq_L=96.3nm
TEXT -824 1120 Left 2 !.param SA_eq_W=141nm
TEXT -824 1160 Left 2 !.param SA_nset_L={255nm*SA_nset_L_factor}
TEXT -824 1184 Left 2 !.param SA_nset_W={220nm*SA_nset_W_factor}
TEXT -824 1224 Left 2 !.param SA_pset_L={255nm*SA_pset_L_factor}
TEXT -824 1248 Left 2 !.param SA_pset_W={220nm*SA_pset_W_factor}
TEXT -816 1552 Left 2 !.param cells_per_BL=1024
TEXT -832 424 Left 2 ;Cell Array
TEXT -824 944 Left 2 ;Sense Amp.
TEXT -832 224 Left 2 ;Voltage
TEXT -832 248 Left 2 !.param core_voltage=1.1V
TEXT -832 288 Left 2 !.param wordline_voltage=2.9V
TEXT -832 616 Left 2 !.param cell0_charge=core_voltage*cell0_charge_state
TEXT -832 656 Left 2 !.param cell1_charge=core_voltage*other_cells_charge_state
TEXT -832 688 Left 2 !.param cell2_charge=core_voltage*other_cells_charge_state
TEXT 48 -2400 Left 2 ;Word line in array 1
TEXT -832 720 Left 2 !.param cell3_charge=core_voltage*other_cells_charge_state
TEXT 48 -2912 Left 2 ;Word line in array 1
TEXT -832 752 Left 2 !.param cell4_charge=core_voltage*other_cells_charge_state
TEXT 48 -3408 Left 2 ;Word line in array 1
TEXT -832 784 Left 2 !.param cell5_charge=core_voltage*other_cells_charge_state
TEXT 48 -3856 Left 2 ;Word line in array 1
TEXT -832 816 Left 2 !.param cell6_charge=core_voltage*other_cells_charge_state
TEXT 48 -4304 Left 2 ;Word line in array 1
TEXT -832 840 Left 2 !.param cell7_charge=core_voltage*other_cells_charge_state
TEXT 48 -4736 Left 2 ;Word line in array 1
TEXT -832 872 Left 2 !.param cell0_charge_state=0.8
TEXT -832 320 Left 2 !.param pv_modifier=0.5
TEXT -832 360 Left 2 !.param plate_voltage={core_voltage*pv_modifier}
TEXT -816 1400 Left 2 !.param psense_act=4ns
TEXT -816 1424 Left 2 !.param nsense_act=4ns
TEXT -808 1840 Left 2 ;Wordline Activation
TEXT -808 1872 Left 2 !.param wl0_act=1.0
TEXT -808 1904 Left 2 !.param wl1_act=1.0
TEXT -808 1936 Left 2 !.param wl2_act=0.0
TEXT -808 1968 Left 2 !.param wl3_act=0.0
TEXT -808 2000 Left 2 !.param wl4_act=0.0
TEXT -808 2032 Left 2 !.param wl5_act=0.0
TEXT -808 2064 Left 2 !.param wl6_act=0.0
TEXT -808 2096 Left 2 !.param wl7_act=0.0
TEXT -808 2280 Left 2 !.param tech_node=7
TEXT -560 2280 Left 2 ;1 -> 45 nm, 4 -> 32nm, 7 -> 22 nm, 9-> 16nm
TEXT -808 2248 Left 2 ;Technology Scaling
TEXT -808 2312 Left 2 !.param cell_cap_factor={0.95**tech_node}
TEXT -808 2344 Left 2 !.param bl_cap_factor={0.95**tech_node}
TEXT -808 2376 Left 2 !.param access_tran_L_factor={0.95**tech_node}
TEXT -808 2408 Left 2 !.param access_tran_W_factor={0.85**tech_node}
TEXT -808 2440 Left 2 !.param SA_nmos_L_factor={0.93**tech_node}
TEXT -808 2464 Left 2 !.param SA_nmos_W_factor={0.93**tech_node}
TEXT -808 2496 Left 2 !.param SA_pmos_L_factor={0.93**tech_node}
TEXT -808 2520 Left 2 !.param SA_pmos_W_factor={0.93**tech_node}
TEXT -808 2552 Left 2 !.param SA_nset_L_factor={0.93**tech_node}
TEXT -808 2576 Left 2 !.param SA_nset_W_factor={0.93**tech_node}
TEXT -808 2608 Left 2 !.param SA_pset_L_factor={0.93**tech_node}
TEXT -808 2632 Left 2 !.param SA_pset_W_factor={0.95**tech_node}
TEXT -816 1768 Left 2 !.param wordline_C={WL_C_per_cell*cells_per_LWL}
TEXT -816 1704 Left 2 !.param WL_C_per_cell=0.07fF
TEXT -816 1648 Left 2 ;Wordline Parasitics
TEXT -816 1672 Left 2 !.param cells_per_LWL=1024
TEXT -816 1736 Left 2 !.param WL_R_per_cell=40ohm
TEXT -816 1800 Left 2 !.param wordline_R={WL_R_per_cell*cells_per_LWL}
TEXT -808 2664 Left 2 !.param WL_cap_factor={0.95**tech_node}
TEXT -808 2696 Left 2 !.param WL_res_factor={0.95**tech_node}
TEXT -800 2856 Left 2 ;Write Logic
TEXT -800 2888 Left 2 !.param wr0_voltage=0V
TEXT -800 2912 Left 2 !.param wr1_voltage=0V
TEXT -832 904 Left 2 !.param other_cells_charge_state=0.8
TEXT -808 2144 Left 2 !.param wl0_act_time=20ns
TEXT -808 2176 Left 2 !.param other_wls_act_time=20ns
TEXT -824 1288 Left 2 !.param SA_nWR_L={70nm*SA_nWR_L_factor}
TEXT -824 1312 Left 2 !.param SA_nWR_W={840nm*SA_nWR_W_factor}
TEXT -808 2728 Left 2 !.param SA_nWR_L_factor={0.93**tech_node}
TEXT -808 2752 Left 2 !.param SA_nWR_W_factor={0.93**tech_node}
TEXT -824 1344 Left 2 !.param SA_pWR_L={70nm*SA_pWR_L_factor}
TEXT -824 1368 Left 2 !.param SA_pWR_W={840nm*SA_pWR_W_factor}
TEXT 1704 -680 Left 2 ;write_driver_inv
TEXT 200 -424 Right 2 ;write_driver
TEXT -800 2944 Left 2 !.param csel_act=400ns
TEXT -808 2776 Left 2 !.param SA_pWR_L_factor={0.93**tech_node}
TEXT -808 2800 Left 2 !.param SA_pWR_W_factor={0.93**tech_node}