A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to in less than . The development of this technology falls under applied physics, which is a rapidly growing area of research. The nanosecond pulsed-power technology is concerned with semiconductor devices capable of generating high-power pulses spanning to An SOS operates at repetition rates of up to with lifetimes exceeding pulses. An arrangement of several SOS diodes can hold off voltage levels between This paper considers the primary physical processes that control the principle of operation of an SOS diode. It also describes the SOS design, characteristics, SOS generators, and prospects for future development. General Considerations for an SOS The production of nanosecond high-power pulses can be achieved using two mainline methods. In the first line, an SOS can be made from the accumulation of energy in an electric field in low-inductance capacitors and pulse-forming lines arranged to include a nanosecond high-current closing switch [1]. In the second line, the energy is accumulated in the magnetic field of an inductive current-carrying circuit and delivered to a load using an opening switch. This approach depends on the premise that the inductive energy density is twice the magnitude present in the capacitive storage [1]. It is essential to note that fast interruption of high-pulsed currents is critical in the production of an SOS because the switch must hold off megavolt voltages and cut off currents from about to over within a very short time (in nanoseconds). The above requirements are optimal for the production of high-power pulse switches and have been applied in plasma opening switches with both nano and microsecond triggering, opening switches based on exploded wires, and injection thyratrons [2]. A major challenge with this technology is that the switches cannot work repetitively or are characterized by low-pulse repetition rates and limited timeframes due to wearing out of the electrode. The Technology behind the SOS The functionality of nanosecond pulsed power devices is based on high-power voltage and current pulse generators. The energy generated by SOS diodes is used directly or transformed from one type of radiation to another. It is important to note that the key processes involved in this system are energy accumulation and switching during the final stage of power amplification [1, 3]. Overall, the research and development of novel ideas in this area of physics are important for the innovation of pulsed power technology. The generation of nanosecond high-power pulses hinges on two critical methodologies that are distinct in the way energy is stored. The first method involves the buildup of electric field energy in fast capacitive energy stores (examples include low inductance capacitors and liquid-dielectric pulse-forming lines) and subsequent transmission of energy to the load through closing devices (nanosecond high-current closing switches) [1, 2, 3]. The second approach entails the accumulation of energy in the magnetic field of a current-carrying inductive circuit, which is transferred to the load using opening switches (circuit breakers). The following diagrams illustrate simplified electric circuits of the two ways of generating nanosecond high-pulse power pulses. Figure