# Viljams Šoklijs[labot | labot pirmkodu]

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| Viljams Šoklijs *William Bradford Shockley Jr.* |
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| Viljams Šoklijs 1975. gadā |
| Personīgā informācija |
| Dzimis | 1910. gada 13. februārī Londona,  Apvienotā Karaliste |
| Miris | 1989. gada 12. augustā (79 gadi) Stenforda, Kalifornija,  ASV |
| Pilsonība |  ASV |

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| Zinātniskā darbība |
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| Zinātne | fizika |
| Darba vietas | *Bell Labs* *Shockley Semiconductor Laboratory* Stenforda Universitāte |
| Alma mater | Masačūsetsas Tehnoloģiju institūts Kalifornijas Tehnoloģiju institūts |
| Pasniedzēji | Džons Sleiters |
| Sasniegumi, atklājumi | * Punktveida kontakta tranzistors un GJT tranzistors (Grown-junction transistor)
* Diffused-base transistor
* Heterojunction bipolar transistor
* Tiristors
* BARITT diode
* Šoklija diode
* P-N pārejas teorija
* Bipolārā tranzistora (BJT) teorija
* Lauka-efekta tranzistora (FET) teorija
* Deathnium
* Deep-level trap
* Empty lattice approximation
* Gradual channel approximation
* Lucky electron model
* Hot electron theory (Hot electron injection)
* Channel length modulation
* Process variation
* Ion implantation
* Low-level injection
* Through-silicon via (TSV)
* Transmission line measurement
* Šoklija diodes vienādojums
* Shockley-Read-Hall recombination (Carrier generation and recombination)
* Shockley partials (Partial dislocation)
* Shockley–Ramo theorem
* Shockley states (Surface states)
* Shockley–Queisser limit
* Haynes-Shockley experiment
* Read-Shockley equation (Grain boundary - Boundary energy)
* Van Roosbroeck-Shockley equation (Reciprocitāte (optoelektronikā))
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| Apbalvojumi | * Nobela prēmija fizikā (1956)
* Comstock Prize in Physics (1953)
* Oliver E. Buckley Condensed Matter Prize (1953)
* Wilheln Exner Medal (1963)
* IEEE Medal of Honor (1980)
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**Viljams Šoklijs** (angļu: *William Bradford Shockley Jr.*, dzimis 1910. gada 13. februārī, miris 1989. gada 12. augustā) bija ASV fiziķis un izgudrotājs. 1956. gadā Šoklijam kopā ar Džonu Bardīnu un Volteru Brateinu tika piešķirta Nobela prēmija fizikā par viņu pusvadītāju pētījumiem un tranzistora efekta atklāšanu.

## Biogrāfija

Kopš 1945. gada Šoklijs bija *Bell Labs* izpētes grupas vadītājs, kurā bija Džons Bardīns un Volters Brateins. Pēc *Bell Labs* izpētes grupas izjukšanas, 1956. gadā Šoklijs pārvācās no Ņūdžersijas uz Kaliforniju, kur izveidoja savu pusvadītāju ražotni *Shockley Semiconductor Laboratory*, kur viņš strādāja pie jaunu tranzistoru izstrādes komercializācijas. Šoklija uzņēmums, kas bija *Beckman Instruments, Inc.* nodaļa, bija pirmais tāda tipa uzņēmums, kas strādāja ar pusvadītāju ierīcēm tā sauktajā Silīcija ielejā. Vēlāk daži no viņa darbiniekiem paši izveidoja savus uzņēmumus.

Džons Bardīns, Viljams Šoklijs un Volters Brateins *Bell Labs*, 1948. gads
Daļēji pateicoties Šoklija mēģinājumiem komercializēt jaunu tranzistora dizainu 20. gadsimta piecdesmitajos un sešdesmitajos gados, Kalifornijas Silīcija ieleja kļuva par elektronikas inovāciju rašanās vietu. Savā turpmākajā dzīvē, no 1958. gada Šoklijs bija Stenfordas Universitātes elektroinženierijas profesors, kur viņš arī kļuva par aktīvu eigēnikas teorijas atbalstītāju.

ASV patentēti vairāk nekā 90 Šoklija izgudrojumi.

## Patenti

Šoklijam ir vairāk nekā 90 ASV patentu. Daži no nozīmīgākajiem:

| Nosaukums | Piezīmes |
| --- | --- |
| US 2502488  *Semiconductor Amplifier* | Apr. 4, 1950; Šoklija pirmais patents saistīts ar tranzistoriem. |
| US 2569347  *Circuit element utilizing semiconductive material* | Sept. 25, 1951; Viņa agrākais ar tranzistoriem saistītais pieteikums (1948. gada 26. jūnijs). |
| US 2655609  *Bistable Circuits* | Okt. 13, 1953; Izmantots datoros. |
| US 2787564  *Forming Semiconductive Devices by Ionic Bombardment* | Apr. 2, 1957; Difūzijas process piemaisījumu implantēšanai. |
| US 3031275  *Process for Growing Single Crystals* | Apr. 24, 1962; Uzlabojumi pamatmateriālu ražošanas procesā. |
| US 3053635  *Method of Growing Silicon Carbide Crystals* | Sept. 11, 1962; Citu pusvadītāju izpēte. |

## Bibliogrāfija

### Šoklija pirmskara zinātniskie raksti

* An Electron Microscope for Filaments: Emission and Adsorption by Tungsten Single Crystals, R. P. Johnson and W. Shockley, Phys. Rev. 49, 436–440 (1936) doi:10.1103/PhysRev.49.436
* Optical Absorption by the Alkali Halides, J. C. Slater and W. Shockley, Phys. Rev. 50, 705–719 (1936) doi:10.1103/PhysRev.50.705
* Electronic Energy Bands in Sodium Chloride, William Shockley, Phys. Rev. 50, 754–759 (1936) doi:10.1103/PhysRev.50.754
* The Empty Lattice Test of the Cellular Method in Solids, W. Shockley, Phys. Rev. 52, 866–872 (1937) doi:10.1103/PhysRev.52.866
* On the Surface States Associated with a Periodic Potential, William Shockley, Phys. Rev. 56, 317–323 (1939) doi:10.1103/PhysRev.56.317
* The Self-Diffusion of Copper, J. Steigman, W. Shockley and F. C. Nix, Phys. Rev. 56, 13–21 (1939) doi:10.1103/PhysRev.56.13

### Šoklija pēckara raksti

* "The Theory of p‐n Junctions in Semiconductors and p‐n Junction Transistors", W Shockley (1949) doi:10.1002/j.1538-7305.1949.tb03645.x
* "Hole Injection in Germanium—Quantitative Studies and Filamentary Transistors", W. Shockley G. L. Pearson J. R. Haynes (1949) doi:10.1002/j.1538-7305.1949.tb03641.x
* "Hot Electrons in Germanium and Ohm's Law", W. Shockley (1951) doi:10.1002/j.1538-7305.1951.tb03692.x
* "Negative Resistance Arising from Transit Time in Semiconductor Diodes", W. Shockley (1954) doi:10.1002/j.1538-7305.1954.tb03742.x
* "Unit‐Cube Expression for Space‐Charge Resistance", S. M. Sze, W. Shockley (1967) doi:10.1002/j.1538-7305.1967.tb01716.x
* "On the Statistics of Individual Variations of Productivity in Research Laboratories", Shockley 1957
* Iedzimtība:
	+ Shockley 1965, "Is Quality of US Population Declining." U.S. News and World Report, November 22, pp. 68-71
	+ Shockley 1966, "Possible Transfer of Metallurgical and Astronomical Approaches to Problem of Environment versus Ethnic Heredity" (on an early form of admixture analysis)
	+ Shockley 1966, "Population Control or Eugenics." In J. D. Roslansky (ed.), *Genetics and the Future of Man* (New York: Appleton-Century-Crofts)
	+ Shockley 1967, "The Entrenched Dogmatism of Inverted Liberals", manuscript by Shockley from which major portions were read in lectures
	+ Shockley 1968, "Proposed Research to Reduce Racial Aspects of the Environment-Heredity Uncertainty", proposal read by Shockley before the National Academy of Science on April 24, 1968
	+ Shockley 1968, "Ten Point Position Statement on Human Quality Problems", revised by Shockley from a talk which he presented on "Human Quality Problems and Research Taboos"
	+ Shockley 1969, "An Analysis Leading to a Recommendation Concerning Inquiry into Eugenic Legislation", press release by Shockley, Stanford University, 28 April 1969
	+ Shockley 1970, "A 'Try Simplest Cases' Approach to the Heredity-Poverty-Crime Problem." In V. L. Allen (ed.), *Psychological Factors in Poverty* (Chicago: Markham)
	+ Shockley 1979, "Proposed NAS Resolution, drafted October 17, 1970", proposed by Shockley before the National Academy of Sciences
	+ Shockley 1970, "New Methodology to Reduce the Environment-Heredity Uncertainty About Dysgenics"
	+ Shockley 1971, "Hardy-Weinberg Law Generalized to Estimate Hybrid Variance for Negro Populations and Reduce Racial Aspects of the Environment-Heredity Uncertainty"
	+ Shockley 1971, "Dysgenics - A Social Problem Evaded by the Illusion of Infinite Plasticity of Human Intelligence?", manuscript planned for reading at the American Psychological Association Symposium entitled: "Social Problems: Illusion, Delusion or Reality."
	+ "Models, Mathematics, and the Moral Obligation to Diagnose the Origin of Negro IQ Deficits", W. Shockley, (1971)
	+ "Negro IQ Deficit: Failure of a 'Malicious Coincidence' Model Warrants New Research Proposals", Shockley 1971
	+ "Dysgenics, Geneticity, Raceology: A Challenge to the Intellectual Responsibility of Educators", Shockley 1972a
	+ "A Debate Challenge: Geneticity Is 80% for White Identical Twins' I.Q.'s", Shockley 1972b
	+ Shockley 1972, "Proposed Resolution Regarding the 80% Geneticity Estimate for Caucasian IQ", advance press release concerning a paper presented by Shockley
	+ Shockley 1973, "Deviations from Hardy-Weinberg Frequencies Caused by Assortative Mating in Hybrid Populations"
	+ Shockley 1974, "Eugenic, or Anti-Dysgenic, Thinking Exercises", press release by Shockley dated 1974 May 3
	+ Shockley 1974, "Society Has a Moral Obligation to Diagnose Tragic Racial IQ Deficits", prepared statement by Shockley to be read during his debate against Roy Innis
	+ Shockley 1978, "Has Intellectual Humanitarianism Gone Berserk?", introductory statement read by Shockley prior to a lecture given by him at UT Dallas
	+ Shockley, 1979, "Anthropological Taboos About Determinations of Racial Mixes", press release by Shockley on 16 October 1979
	+ Shockley 1980, "Sperm Banks and Dark-Ages Dogmatism", position paper presented by Shockley in a lecture to the Rotary Club of Chico, California, 16 April 1980
	+ Shockley 1981, "Intelligence in Trouble", article by Shockley published in Leaders magazine, issue dated 1981 Jun 15

### Grāmatas

* Shockley, William – *Electrons and holes in semiconductors, with applications to transistor electronics*, Krieger (1956) ISBN 0-88275-382-7.
* Shockley, William and Gong, Walter A – *Mechanics* Charles E. Merrill, Inc. (1966).
* Shockley, William and Pearson, Roger – *Shockley on Eugenics and Race: The Application of Science to the Solution of Human Problems*, Scott-Townsend (1992) ISBN 1-878465-03-1.

## Atsauces

## Ārējās saites

* Vikikrātuvē par šo tēmu ir pieejami multivides faili. Skatīt: Viljams Šoklijs.

* *Encyclopædia Britannica* raksts (angliski)
* *Brockhaus Enzyklopädie* raksts (vāciski)
* Krievijas Lielās enciklopēdijas raksts (krieviski)
* Krievijas Lielās enciklopēdijas raksts (2004-2017) (krieviski)
* *Encyclopædia Universalis* raksts (franciski)
* Biogrāfija Nobela prēmijas mājaslapā (angliski)
* William Shockley interview with *Playboy* *Playboy* 1980,

| Apbalvojumi |
| --- |
| Priekštecis:  **Viliss Lembs Polikarps Kušs**  |  **Nobela prēmija fizikā**  1956. kopā ar Volteru Brateinu un Džonu Bardīnu | Pēctecis:  **Li Džendao Jans Džeņnins**  |