Chemical beam epitaxy | Wikipedia audio article
Channel: wikipedia tts
Date: 2019-05-04

This is an audio version of the Wikipedia Article:
https://en.wikipedia.org/wiki/Chemical_beam_epitaxy


00:00:56 1 Basic principles
00:02:48 2 Experimental Setup
00:04:22 3 Growth Kinetics
00:07:04 4 Compatibility with Device Fabrication
00:07:15 4.1 Selective Growth at Low Temperatures
00:08:43 4.2 p-type Doping
00:09:43 5 Advantages and Disadvantages of CBE
00:10:03 5.1 Advantages over MBE
00:11:07 5.2 Advantages over MOCVD
00:11:33 5.3 Shortcomings of CBE
00:12:07 6 See also



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SUMMARY
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Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two (slightly different) processes, however.  When used in the strictest sense, CBE refers to the technique in which both components are obtained from gaseous sources, while MOMBE refers to the technique in which the group III component is obtained from a gaseous source and the group V component from a solid source.