Electron beam lithography | Wikipedia audio article
Channel: wikipedia tts
Date: 2019-01-13

This is an audio version of the Wikipedia Article:
https://en.wikipedia.org/wiki/Electron-beam_lithography


00:00:55 1 Systems
00:01:35 1.1 Electron sources
00:02:13 1.2 Lenses
00:02:41 1.3 Stage, stitching and alignment
00:03:22 1.4 Electron beam write time
00:06:04 1.5 Shot noise
00:07:16 1.6 Defects in electron-beam lithography
00:08:46 2 Electron energy deposition in matter
00:12:13 2.1 Resolution capability
00:14:10 2.2 Scattering
00:15:12 2.3 Proximity effect
00:16:40 3 Charging
00:18:23 4 Electron-beam resist performance
00:20:10 5 New frontiers
00:22:57 6 See also



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SUMMARY
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Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing).  The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution.  This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development.