In an intrinsic semiconductor the energy gap `E_(g)` is 1.2 eV. Its hole mobility is
Channel: Doubtnut
Date: 2020-05-09

In an intrinsic semiconductor the energy gap `E_(g)` is 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600 K and that at 300 K? Assume that the  temerature dependence of intrinsic carrier concentration `n_(i)` is given by    `n_(i)=n_(0)"exp"(-(E_(g))/(2k_(B)T))` where `n_(0)`is a constant.