Silicon bandgap temperature sensor | Wikipedia audio article
Channel: wikipedia tts
Date: 2019-10-04

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SUMMARY
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The silicon bandgap temperature sensor is an extremely common form of temperature sensor (thermometer) used in electronic equipment.  Its main advantage is that it can be included in a silicon integrated circuit at very low cost.  The principle of the sensor is that the forward voltage of a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature-dependent, according to the following equation:

  
    
      
        
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    {\displaystyle V_{BE}=V_{G0}\left(1-{\frac {T}{T_{0}}}\right)+V_{BE0}\left({\frac {T}{T_{0}}}\right)+\left({\frac {nKT}{q}}\right)\ln \left({\frac {T_{0}}{T}}\right)+\left({\frac {KT}{q}}\right)\ln \left({\frac {I_{C}}{I_{C0}}}\right)\,}
  where

T = temperature in kelvins,
T0 = reference temperature,
VG0 = bandgap voltage at absolute zero,
VBE0 = junction voltage at temperature T0 and current IC0,
K = Boltzmann's constant,
q = charge on an electron,
n = a device-dependent constant.
By comparing the voltages of two junctions at the same temperature, but at two different currents, IC1 and IC2, many of the variables in the above equation can be eliminated, resulting in the relationship:

  
    
      
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    {\displaystyle \Delta V_{BE}={\frac {KT}{q}}\cdot \ln \left({\frac {I_{C1}}{I_{C2}}}\right)\,}
  Note that the junction voltage is a function of current density, i.e. current/junction area, and a simi ...