Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Sw... | RTCL.TV
Channel: Social RTCL TV
Date: 2023-10-26

### Keywords ###
#atomiclayerdeposition #conductiveoxideinterfaces #resistiveswitching #resistiveswitchingmemory #2Delectrongas #valencechangememory #RTCLTV #shorts

### Article Attribution ###
Title: Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Authors: Yang Li, Wei Wang, Di Zhang, Maria Baskin, Aiping Chen, Shahar Kvatinsky, Eilam Yalon ,and Lior Kornblum
Publisher: Wiley-VCH
DOI: 10.1002/aelm.202200800
DOAJ URL: https://doaj.org/article/df9c38b0b59443329e764d45fec3b84d
Source URL: https://doi.org/10.1002/aelm.202200800



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### Video Timestamps ###
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0:00:39 - Title 
0:00:44 - End