Chemical vapor deposition
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Date: 2021-12-09

Chemical vapor deposition, by Wikipedia https://en.wikipedia.org/wiki?curid=6111 / CC BY SA 3.0

#Chemical_vapor_deposition
#Chemical_processes
#Coatings
#Glass_coating_and_surface_modification
#Industrial_processes
#Plasma_processing
#Semiconductor_device_fabrication
#Synthetic_diamond
#Thin_film_deposition
#Vacuum
DC plasma （violet） enhances the growth of carbon nanotubes in laboratory-scale PECVD apparatus Chemical vapor deposition （CVD） is a vacuum deposition method used to produce high quality, and high-performance, solid materials.
The process is often used in the semiconductor industry to produce thin films.
In typical CVD, the wafer （substrate） is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.
Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
Microfabrication processes widely use CVD to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial.
These materials include: silicon （dioxide, carbide, nitride, oxynitride）, carbon （fiber, nanofibers, nanotubes, diamond and graphene）, fluorocarbons, filaments, tungsten, titanium nitride and various high-k dielectrics.
Hot-wall thermal CVD （batch operation type） Plasma assisted CVD CVD is practiced in a variety of formats.
These processes generally differ in the means by which chemical reactions are initiated.
Most modern CVD is either LPCVD or UHVCVD. CVD is commonly used to deposit conformal films and augment substrate surfaces in ways that more traditional surface modification techniques are not capable of.
CVD is extremely useful in the process of atomic layer deposition at depositing extremely thin layers of material.
A variety of applications for such films exist.
Gallium arsenide is used in some integrated circuits （ICs） and photovoltaic devices.
Amorphous polysilicon is used in photovoltaic devices.
Certain carbides and...