Low-κ dielectric | Wikipedia audio article
Channel: wikipedia tts
Date: 2019-01-28

This is an audio version of the Wikipedia Article:
https://en.wikipedia.org/wiki/Low-%CE%BA_dielectric


00:01:06 1 Low-κ materials
00:01:35 1.1 Fluorine-doped silicon dioxide
00:01:56 1.2 Organosilicate glass or OSG (Carbon-doped oxide or CDO)
00:02:06 1.3 Porous silicon dioxide
00:02:28 1.4 Porous organosilicate glass (carbon-doped oxide)
00:02:42 1.5 Spin-on organic polymeric dielectrics
00:03:07 1.6 Spin-on silicon based polymeric dielectric
00:03:17 1.7 Air gaps
00:03:51 2 See also
00:04:03 3 References
00:04:40 4 External links
00:04:52 Polymeric dielectrics are generally deposited by a spin-on approach, which is traditionally used for the deposition of photoresist materials, rather than chemical vapor deposition. Integration difficulties include low mechanical strength, coefficient of thermal expansion (CTE) mismatch and thermal stability. Some examples of spin-on organic low-κ polymers are polyimide, polynorbornenes, benzocyclobutene, and PTFE.
00:05:24 Spin-on silicon based polymeric dielectric
00:05:35 There are two kinds of silicon based polymeric dielectric materials, hydrogen silsesquioxane (HSQ) and methylsilsesquioxane (MSQ).
00:05:49 Air gaps
00:05:59 The ultimate low-k material is air with a relative permittivity value of ~1.0. However, the placement of air gaps between the conducting wires compromises the mechanical stability of the integrated circuit making it impractical to build an IC consisting entirely of air as the insulating material. Nevertheless, the strategic placement of air gaps can improve the chip's electrical performance without compromising critically its durability. Intel reported the introduction of air gaps to two of the metallization levels (M4 and M6) of their 14 nm chip.
00:06:38 See also



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SUMMARY
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In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant relative to silicon dioxide. Although the proper symbol for the relative dielectric constant is the Greek letter κ (kappa), in conversation such materials are referred to as being "low-k" (low-kay) rather than "low-κ" (low-kappa). Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds and lower heat dissipation.