SONOS | Wikipedia audio article
Channel: wikipedia tts
Date: 06/05/2019

This is an audio version of the Wikipedia Article:
https://en.wikipedia.org/wiki/SONOS


00:01:51 1 Description
00:04:30 2 Comparison with Floating-Gate structure
00:08:31 3 History
00:10:44 4 Current efforts
00:13:43 5 See also



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- Socrates


SUMMARY
=======
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"siicon dioxide"—"silicon",
is a cross sectional structure of MOSFET, realized in late 70's. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.
It is one of CTF (charge trap flash) variants.  It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material.
A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon").
Companies offering SONOS-based products include Cypress Semiconductor, Macronix, Toshiba, United Microelectronics Corporation and Floadia.