Question: two components that jenkins is mainly integrated with

title: Field-effect transistor
text: The JFET ( junction field - effect transistor ) uses a reverse biased p -- n junction to separate the gate from the body . The MOSFET ( metal -- oxide -- semiconductor field - effect transistor ) utilizes an insulator ( typically SiO ) between the gate and the body . The MNOS Metal - Nitride - Oxide - Semiconductor transistor utilizes an nitride - oxide layer insulator between the gate and the body . The DGMOSFET ( Dual-gate MOSFET ) , a FET with two insulated gates . The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor , amplifier and memory node at the same time . It can be used as an image ( photon ) sensor . The FREDFET ( fast - reverse or fast - recovery epitaxial diode FET ) is a specialized FET designed to provide a very fast recovery ( turn - off ) of the body diode . The HIGFET ( heterostructure insulated gate field - effect transistor ) is now used mainly in research . The MODFET ( modulation - doped field - effect transistor ) is a high - electron - mobility transistor using a quantum well structure formed by graded doping of the active region . The TFET ( tunnel field - effect transistor ) is based on band - to - band tunneling . The IGBT ( insulated-gate bipolar transistor ) is a device for power control . It has a structure akin to a MOSFET coupled with a bipolar - like main conduction channel . These are commonly used for the 200 -- 3000 V drain - to - source voltage range of operation . Power MOSFETs are still the device of choice for drain - to - source voltages of 1 to 200 V . The HEMT ( high - electron - mobility transistor ) , also called a HFET ( heterostructure FET ) , can be made using bandgap engineering in a ternary semiconductor such as AlGaAs . The fully depleted wide - band - gap material forms the isolation between gate and body . The ISFET ( ion - sensitive field - effect transistor ) can be used to measure ion concentrations in a solution ; when the ion concentration ( such as H , see pH electrode ) changes , the current through the transistor will change accordingly . The BioFET ( Biologically sensitive field - effect transistor ) is a class of sensors / biosensors based on ISFET technology which are utilized to detect charged molecules ; when a charged molecule is present , changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor . These include EnFETs , ImmunoFETs , GenFETs , DNAFETs , CPFETs , BeetleFETs , and FETs based on ion - channels / protein binding . The MESFET ( metal -- semiconductor field - effect transistor ) substitutes the p -- n junction of the JFET with a Schottky barrier ; and is used in GaAs and other III - V semiconductor materials . The NOMFET is a nanoparticle organic memory field - effect transistor . The GNRFET ( graphene nanoribbon field - effect transistor ) uses a graphene nanoribbon for its channel . The VeSFET ( vertical - slit field - effect transistor ) is a square - shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners . Two gates occupy the other corners , and control the current through the slit . The CNTFET ( carbon nanotube field - effect transistor ) . The OFET ( organic field - effect transistor ) uses an organic semiconductor in its channel . The DNAFET ( DNA field - effect transistor ) is a specialized FET that acts as a biosensor , by using a gate made of single - strand DNA molecules to detect matching DNA strands . The QFET ( quantum field effect transistor ) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor 's area of electron conduction .