nclearlove(at)gmail.com TEL : 011-706-9433 / FAX : 011-706-9432研究キーワード:ルチル型酸化物の歪効果, マルチフェロイックD0000-0003-1838-2804
略歴
2020年4月—現在博士課程,北海道大学大学院情報科学院(指導教員:太田裕道教授, 薄膜機能材料研究分野） 2019年10月—2010年3月研究生, 北海道大学電子科学研究所(指導教員:太田裕道教授, 薄膜機能材料研究分野） 2018年10月 —2019年8月  日本語訓練, 中国赴日本国留学生予備学校2015年9月—2018年7月修士課程, Physical Electronics, East China Normal University 2011年9月—2015年7月学士(工学), Materials Science and Engineering, Northwestern Polytechnical University
[8] Binjie Chen*, Kungwan Kang, Hyoungjeen Jeen, Yuqiao Zhang, Jinghuang Lin, Bin Feng, Yuichi Ikuhara, Sena Hoshino, Katsuyuki Matsunaga, and Hiromichi Ohta*, "Orthorhombic Distortion-induced Anatase-like Optoelectronic Properties of Rutile TiO 2 ", J. Appl. Phys. 132, 185301 (2022). (November 8, 2022) (DOI: 10.1063/5.0119725) [7] Binjie Chen, Hiromichi Ohta, and Tsukasa Katayama*, “Ferroelectric and magnetic properties of hexagonal ErFeO 3 epitaxial films", ACS Appl. Electron. Mater. 4, 4547–4552 (2022). (August 23, 2022) (DOI: 10.1021/acsaelm.2c00767) [6] Binjie Chen , Tetsuya Hasegawa, Hiromichi Ohta, and Tsukasa Katayama, "Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxides", J. Mater. Chem. C 10, 5621-5626 (2022). (March 4th, 2022) (DOI: 10.1039/D1TC05944K) [5] Binjie Chen*, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta*, "Room Temperature Insulator-to-Metal Transition of VO 2 / TiO 2 Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates", Adv. Electron. Mater. 2100687 (2021). (October 19, 2021) (DOI:_ 10.1002/aelm.202100687) [4] Doudou Liang*, Bin-jie Chen, Bin Feng, Yuichi Ikuhara, Hai Jun Cho, and Hiromichi Ohta*, "Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO 2 - Based Top-Gated Thin-Film Transistors using Electric Field Thermopower Modulation: Implications for Flat-Panel Displays", ACS Appl. Nano Mater. 3, 12427-12432 (2020). (December 15, 2020) (DOI: 10.1021/acsanm.0c03069) [3] Dou-dou Liang*#, Binjie Chen#, Hai Jun Cho, and Hiromichi Ohta*, “Thickness Optimization toward High-Performance Bottom-Gated Transparent Tin Dioxide Thin-Film Transistor", ACS Appl. Electron. Mater. 2, 3454-3458 (2020). (October 9, 2020) (DOI:10.1021/acsaelm.0c00711) [2] Bin-Jie Chen, Nan Yang, Ni Zhong*, Xiao-Dong Tang, Ping-Xiong Yang, Ping-Hua Xiang*, Chun-Gang Duan, "Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition", Mater. Lett. 202, 96-98 (2017). (May 15, 2017) (DOI: 10.1016/j.matlet.2017.05.063) [1] Bin-Jie Chen, Yan Sun, Nan Yang, Ni Zhong, Yuan-Yuan Zhang, Wei Bai, Lin Sun, Xiao-Dong Tang, Ping-Xiong Yang, Ping-Hua Xiang, and Chun-Gang Duan, "Electronic phase diagram of oxygen-deficient SmNiOצ-3 epitaxial thin films", J. Phys. D: Appl. Phys. 50, 235302 (2017). (May 16, 2017)(DOI: 10.1088/1361-6463/aa6de7)
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[19] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Orthorhombic Distortion Induced Insulator-to-Metal Transition Behavior of VO 2 /TiO 2 Bilayer Films on (1-100) α- Al 2 O 3 “, 7th International Conference on Advances in Functional Materials (AFM 2023), Fukuoka, Japan, January 9-12, 2022 (Oral) [18] Binjie Chen, Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO 2 /TiO 2 Multilayered Films", The 23rd RIES-Hokudai International Symposium_拓 [Taku], Sapporo, Japan, December 5-6, 2022. Poster Award [17] Binjie Chen, Jinchuan Lin, Bin Feng, Yuichi Kithara, and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO 2 /TiO 2 Multilayered Films",薄膜材料デバイス研究会第19回研究集会 in 京都, 龍谷大学響都ホール(京都府京都市), 2022年11月17日-18日. [16] Binjie Chen, Jinchuan Lin, Bin Feng, Yuichi Kithara, and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO 2 /TiO 2 Multilayered Films",全和4年度日本セラミックス協会東北北海道支部研究発表会,伝国の杜(山形県米沢市), 2022年11月10日-11日. [15]陳嫌杰, 太田裕道, “VO₂/TiO₂多層膜の段階的絶縁体/金属転移”, 2022年第83回応用物理学会秋季学術講演会,東北大学川内北キャンパス+オンライン, 2022年9月20日-23日[14] Binjie Chen, Yuqiao Zhang, Katsuyuki Matsunaga, and Hiromichi Ohta, "Optoelectronic Properties of Orthorhombic-Distorted Nb:TiO 2 Films", The 22nd_ International Vacuum Congress (IVC-22), Sapporo, Japan, September 11-16, 2022 [13]陳媒杰, 張雨橋, 太田裕道, “サファイアM面基板上に成長させたルチル型Nb:TiO₂エピタキシャル薄膜の斜方晶歪みと光電子輸送特性”, 2022年第69回応用物理学会春季学街講演会,青山学院大学相模原キャンパス＋オンライン, 2022年3月22日-26日. [12] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of VO 2 /TiO 2 Epitaxial Bilayers on (1-100) α-Al 2 O 3 ",日本セラミックス協会第60回セラミックス基礎科学討論会, 熊本大学, 2022年1月8日-9日. [11] Binjie Chen, Tetsuya Hasegawa, Hiromichi Ohta, Ts[ukasa Katayama, “Antiferroelectric to Ferroelectric Phase Transition in Hexagonal DyFeO 3 Films”, The 22nd_ RIES-HOKUDAI International Symposium, December 5-7, 2021. (Poster) [10] B. Chen, T. Hasegawa, H. Ohta, T. Katayama, "Temperature induced Anti- to Ferroelectric Transition in Hexagonal DyFeO 3 Films”,金和３年度日本セラミックス協会東北北海道支部研究発表会, online, 2021.11.18-19 [9] Binjie Chen, Tetsuya Hasegawa, Hiromichi Ohta, Tsukasa Katayama, "Temperature driven Anti- to Ferroelectric Phase Transition in Hexagonal DyFeO 3 Films",薄膜材料デバイス研究会第18回研究集会_in_京都,オンライン, 2021.11.11-12 (ポスター) [8] B. Chen, G. Kim, H.J. Cho, H. Ohta, “Lattice Strain and Insulator-to Metal Transition of VO 2 / TiO 2 Epitaxial Bilayer Films Grown on M-plane Sapphire Substrates",第82回応用物理学会秋季学術講演会, online, 2021.9.10-13. [7] Binjie Chen, Gowoon Kim, Hai Jun Cho, Hiromichi Ohta, “Reduction of the Tc and suppression of the ΔTc of VO 2 epitaxial films on TiO 2 buffered sapphire substrate (FF02)", 63rd Electronic Materials Conference (EMC 2021), Virtual, June 23-25, 2021 [6] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, "Modulation of the Metal- to-Insulator Transition Behavior of VO 2 Films", 2021年第68回応用物理学会春季学街講演会, online, 2021.3.16-19. [5] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, "Modulation of the Metal- to-Insulator Transition Behavior of VO 2 Epitaxial Films by Insertion of TiO 2 Layers",塞56回応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9- 10. [4] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, "Reduction of Metal-to- Insulator Transition Temperature of VO 2 Films by Inserting TiO 2 Layers", The 21st RIES- Hokudai International Symposium 間 [ma], online, December 10-11, 2020 (poster). [3] Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, “Metal-to-insulator transition temperature reduction of VO 2 films by inserting TiO 2 layers",令和2年度日本セラミックス協会東北北海道支部研究発表会, online, November 13-14, 2020. (口頭) [2] Chinese Physical Society Fall Meeting 2016, Beijing, China, Sept. 2016 [1] The 8th (APCTP) Workshop on Multiferroics 2016, Shanghai, China, Oct. 2016
[4] Poster Award, The 23rd RIES-Hokudai International Symposium, Binjie Chen, Hiromichi Ohta, “Room Temperature Insulator-to-Metal Transition of Strained VO 2 /TiO 2 Multilayered Films“, The 23rd RIES-Hokudai International Symposium 拓 [Taku], Sapporo, Japan, December 5-6, 2022. Certificate [3]発表獎励賞(2021.3.25), Binjie Chen, Gowoon Kim, Hai Jun Cho, and Hiromichi Ohta, "Modulation of the Metal-to-Insulator Transition Behavior of VO 2 Epitaxial Films by Insertion of TiO 2 Layers"，第56回応用物理学会北海道支部/第17回日本光学会北海道支部合同学術講演会, online, 2021.1.9-10 [2] JAPANESE GOVERNMENT (MEXT) SCHOLARSHIP (2019) [1] China National Scholarship for Graduate Students (2017)