＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULESFEATURESVLB512-01R>Dual channel simple and easy gate drive system>Short circuit detection for RTC signal of MOSFET module>Built in short circuit protection (2step turn off with RTC)
>Built in the isolated DC-DC converter for gate drive>Wire connection to MOSFET module>Output gate peak current is +/-30A(max)>Electrical isolation voltage is 4000Vrms (for 1 minute)

TARGETED SiC-MOSFET MODULES

SiC-MOSFET built in RTC by Mitsubishi Electric
FMF800DXZ-24B FMF1200DXZ-24B etc.
*Under development

Built in DCDC HIC(VLA144-152512)

APPLICATIONS

HF converter, Power supply, Inverter etc.

BLOCK DIAGRAM
VCC1(15V)

CN1

Fo1

Predrive

VCC1Interface
INTERFACE

IN1

Vo1 Rg_on(TP1)
Vo2(TP2) Rg_off

G1

Gate shut down
SC1

CN3

GND
IN1
GND
Fo2
GND
IN2
GND
NC
GND
NC
GND

Timer&Reset

Detect

Latch

E1
E1
VCC1

VD(15V)

Reg.

Reg.

DC－DC

VEE1(‐10V)

UVL
E15V

VEE1
VCC2Reg.

DC－DC

UVL
E2
VEE2Fo2
IN2Predrive

1234567891011121314151617181920

VD
GND
VD
GND
VD
GND
VD
GND
Fo1

Interface
INTERFACE

VCC2(15V)

Vo3 Rg_on(TP8)
Vo4(TP9) Rg_off

CN2
VCC2G2Gate shut down
SC2Timer&Reset

Latch

DetectE2
E2
VEE2(‐10V)* There are not Rg_on and Rg_off at the initial state. So please solder the chosen resistors.
* The test pins on the test pad are not installed in mass production.

TP : Test pad

Apr.2022

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＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULESOUTLINE
Unit : mm6－φ3.5

HIC1 (DCDC)

1CN35mm

145mm

4CN190mm

20 192

HIC2 (DCDC)

1CN245mm

5mm

15mm
72.5mmDETAILS OF CONNCETORS
CN1: B4B-XH-A (JST)CN2: B4B-XH-A (JST)Pin No.

Pin name

Pin No.

Pin name

1Vcc1

1E22SC12G23G13SC24E1

4Vcc2

We recommend following parts or equivalent product for wire cable of CN1,2
HOUSINGTERMINAL

Maker

XHP-4

SXH-001T-P0.6

JST

2CN3:3428-6002LCPL
Pin No.
Pin name
1VD
2GND
3VD
4GND
5VD
6GND7VD
8GND
9Fo1
10GND
11IN112GND
13Fo214GND
15IN216GND
17NC
18GND
19NC
20GND

＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULES

MAXIMUM RATINGS
Symbol(unless otherwise noted, Ta=25 ℃)

Item

Conditions

Ratings

Unit

VD

Supply voltage

Between VD and GND

16.5

V

VI

Input signal voltage

Applied between IN1,2–GND

19V

I_Fo

Fo output current

Sink and source current of Fo terminal+/-10mA-30

A30

A

IOHP

Output gate peak current

Pulse width 2us

Viso1

Isolation voltage between
primary and secondary

Sine wave voltage 60Hz, for 1min

4000

Vrms

Viso2

Isolation voltage between
each output

Sine wave voltage 60Hz, for 1min

4000

Vrms

Tc

Case temperature

Surface temperature of output power MOSFET
on substrate

110

deg C

Topr

Operating temperature

No condensation allowable-25 ~ 85

deg C

Tstg

Storage temperature

No condensation allowable-25 ~ 85

deg CIdrive

Gate drive current

Gate average current per one circuit

400mA

IOLP

ELECTRICAL CHARACTERISTICS
SymbolItemVD

Supply voltagefRG(unless otherwise noted, Ta=25℃, VD=15V, Rg_on=Rg_off=1.5Ω, f=20kHz)
Conditions

Limits

UnitMinTypMax

Recommended range

14.5

15

15.5

V

Switching frequency

Recommended range
It is limited by maximum gate average current

-

-

50

kHz

Gate resistance

Recommended range (Total compound value)

0.5-

-

Ω

Qg_total

Total gate charge

Recommended range
Driven total gate charge of connected module

-

-

8uC

VI

Input signal voltage

Recommended range

4.5

-

15.5

V

I_Fo

Fo output current

Recommended range-4-4mA

VCC

VCC voltage

-13.5

1516

V

VI_H

Input signal highthreshold

-

1.5

1.8

2.1

VInput signal low threshold

-0.8

1.1

1.4

VVOH

Plus bias output voltage

Input “H” (High active)

13.5

15

16V

VOL

Minus bias output voltage

Input “L”

-8.75

-10-11.25

VtPLH“L-H” propagation time

Rg=1.5Ω, f=20kHz, C_load:0.15uF, VI=5V

0.2

0.35

0.6

us

“H-L” propagation time

Rg=1.5Ω, f=20kHz, C_load:0.15uF, VI=5V

0.15

0.3

0.55

usTtimerTimer

Between start and cancel of protection(Under input signal is off state)

1-

2

ms

td_SCoff

Output turn off delay
after RTC signal

From receiving RTC signal to start of G1,2 descent

-

1.3

2.5

us

ttrip

Masked time detect
short circuit

From receiving RTC signal to start of Fo1,2 descent

-

0.9

2

us

VSCthSC detection threshold

Applied between SC1,2 and E1,2

4.8

5.6

6.2

V

UVLO+_VCC

Under voltage lock out(Operation start)

VCC voltage

-

12.6-

VUVLO-_VCC

Under voltage lock out(Operation stop)

VCC voltage

-11.7

-V

VI_L

tPHL

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＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULES

CALCULATION FOR GATE DRIVE CURRENT (GATE AVERAGE CURRENT)
This product has isolated DCDC converter built in for gate drive.
The maximum output current rating of this DCDC converter is Idrive(max)And this current means maximum gate average current.
When you decide the switching frequency,
please check the gate average current by next formula.

Gate charge characteristic of MOSFETVGS
15V

Idrive = (Q1＋lQ2l ) x f
 It must be less than Idrive(max)Idrive : Gate average current
Q1: Gate charge at +15V (Read from data sheet of MOSFET)
Q2: Gate charge at -10V (Read from data sheet of MOSFET)
f: Switching frequency of module

Gate charge-10V
Q2

Q1
Qg_total

DEFINITION OF CHARACTERISTICSNORMAL SWITCHING OPERATION
5V
IN1,250%*Test condition : Rg_on=Rg_off=1.5Ω, C_load=0.15uF
f=20kHz, ON Duty=50%

VOH

Vo1,3(TP1,8)

Vo2,4(TP2,9)

0V

VOL
tPHL

tPLH

OPERATION OF SHORT CIRCUIT PROTECTION
IN1,2

VCC
SC1,2

Vscth0V
td_SCoff

G1,2This voltage level is determined by Rg_on and R1.
R1:Inner resistance of RTC circuit in module.
0Vttrip
Ttimer
Fo1,2Protection circuit is reset

4

＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULESAPPLICATION EXAMPLE
VCC1 CN1VCC1VLB512-01R

VDP

Fo1Interface

IN15V

RC filter
~10us

4.7kΩ

4.7kΩ

MCU

Input gate signal(5V-----15V )

VD

2GND

3VD

4GND

5VD

6GND

7VD

8GND

GPSC1SCP

E1EP

R1Gate shut down

CN31G1
Rg_offTimer&Reset

SCDetect
Rs

Detect

Latch

E1VCC1Reg.

DC－DC

UVL
E19Fo1GND
IN112GND

13Fo214GND

15IN216GND

Fo217NC

IN218GND

19NC

20GND

MOSFET module(built in RTC)

VEE1Reg.

1011VEE1VCC2Reg.

DC－DC

UVL
E2
VEE2

VCC2 CN2VCC2VDN

Rg_on
Pre
drive

VD
(15V)

Pre
drive

Rg_on

Interface

G2GN

SC2SCN

E2EN

Rg_off

R1

Gate shut down
Timer&Reset

Latch

Detect

SCDetectRs

E2VEE2Connection by harness*About the IC which drives gate signal on input side, it is not recommended to use the one whose output
is open collector or open drain type.
Other notes
1) Rg_on and Rg_off are not installed at the time of shipment. Please solder the chosen resistors.
2) In functional checks, if you want to leave the short circuit detection circuit unused in VLB512, leave the terminalof SC1,2 open. At that time, the connection of VCC1 and VCC2 to the module is necessary.
However, during actual operation, this approach is dangerous and is not recommended.
3) CN1, CN2 and P-side, N-side correspondence can be swapped.
4) Please design the wiring pattern so that the area surrounded by the input gate signal line becomes as small as
possible to minimize the effect of electromagnetic induction noise.
5) Gate and source wiring is recommended to be twisted pair.
6) Targeted length of the harness to MOSFET module is Less than 15cm.
However, if gate oscillation needs to be suppressed, it should be made even shorter.

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＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULES

OPERATION OF PROTECTION CIRCUITOPERATION FLOW ON DETECTING SHORT CIRCUIT(1) In case the input gate signal is “ON” and the SC terminal voltageof MOSFET module is “L” level, this drive unit will recognize theSTART
main circuit as short circuit and reduce the gate voltage.
Besides, put out fault signal (”L”) which inform that protection circuit
is operating at the same time from Fo terminal (9or13 pin of CN3).
DETECTION OF(2) The protection circuit reset and resort to ordinary condition
SHORT CIRCUIT
if input gate signal is “OFF” when the premised 1~2msec passed.
( “OFF” period needs 10us or more )GATE SHUTDOWNTIMER STARTOUTPUT FAULT SIGNALLATCH & TIMER RESET SYSTEM IN SHORTCIRCUIT PROTECTION CIRCUIT

Once the short-circuit protection circuit starts, it shuts down thegate output and keeps alarm output, causing the latch status.
This status is canceled if the input signal is OFF when specific time
elapses after the activation of the short-circuit protection circuit.
Then, gate output depending on input signals becomes possible.
If the input signal is ON when specific time elapses, the latch
status is not canceled: it is canceled when the signal becomes OFF.
As mentioned above, on the latch & timer reset system, the latch
status is resulted after activation of the protection circuit andshutdown of the gate output. Therefore, during this period, gate
output is not made no matter how much input signals are received.
For this reason, it is possible to safely stop the entire equipment
by sending error signals to the microcomputer during this period tostop all gate signals.

END OF TIMER

TIMER
1~2ms
NoYes

INPUT SIGNAL ISOFFNoYes

CLEAR ALARM
ENABLE OUTPUT

TIMING CHART
IN1,2

VCC

SC1,2

Vscth
td_SCoff

VGS(MOSFET)
VDS(MOSFET)

Short-circuit
occurrence

ID(MOSFET)
ttrip

Timer

Fo1,2

The latch status is canceled.

6＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULESABOUT MOUNTING GATE RESISTORS

There is not gate resistors on this unit at the initial state.
It is possible to install up to 8 resistors in mount area of gate resistors per one channel.
And there are some variations by combining resistors.
There are some examples in the following chart, please refer to it and set the gate resistors.
And please solder the chosen resistors.

RG1~4 or 11~14

Drive
circuit

Rg_on
CN1,2

Vo1,3

GE

Vo2,4

RG5~8 or 15~18

RG_offLayout pattern connection on substrate: Gate resistor mount part (Initial is open)

Example 1

Example 2
RG1~4 or 11~14

Drive
circuit

Vo1,3
Vo2,4

RG1 or 11

CN1,2
G
Drive
circuitE
RG5 or 15

CN1,2Vo1,3GE

Vo2,4

RG5~8 or 15~18

Rg_on RG1 or 11
Rg_off RG5 or 15

Rg_on RG1//RG2//RG3//RG4or RG11//RG12//RG13//RG14
Rg_off RG5//RG6//RG7//RG8or RG15//RG16//RG17//RG187

＜Gate Drive Unit＞

VLB512-01R

PRELIMINARY

DRIVER FOR SiC-MOSFET MODULESAPPLICATION EXAMPLE FOR USE WITH IGBT MODULES
This gate drive unit can also be used to drive IGBT modules. Please refer to the figure below.
IGBT Module

Example1

VCC1 CN1VCC1VLB512-01R
Interface

IN1

Gate shut down

CN35V

MCU

1VD

2

GND

3VD

4

GND

5VD6GND

7VD

8GND

9Fo1

1011GND
IN112GND

13Fo214GND

SC1Timer&Reset

E1VEE1VCC2Reg.

DC－DC

UVL
E2VEE2

VCC2 CN2
VCC2
Rg_on

IN2Fo217NC

IN218GND
NC

VEE1

UVL

Reg.

GND

GND

E1

VCC1Reg.

DC－DC

1620

Detect

Latch

E1

1519

G1
Rg_off

Pre
drive

VD
(15V)

Pre
drive

Rg_on

Fo1

Interface

G2
Rg_offGate shut down

SC2Timer&Reset

Detect

Latch

E2
E2

Connection by harness

VEE2

IGBT Module

Example2

VCC1 CN1VCC1VLB512-01R
Fo1

InterfaceIN1MCU

VD

2GND

3VD

4GND

5VD

6GND

7VD

8GND

Rdump
Cgs

SC1Timer&Reset

DetectLatch

E1E1VCC1Reg.

DC－DC

9Fo1GND
IN112GND

13Fo214GND

15IN216

GND

Fo217NC

IN218

GND

19NC

20

GND

VEE1UVLE1
VEE1Reg.

1011Adaptor(Made by user)

5V

1G1

Gate shut down

CN3

Reference guide
Cd:0.1~1uF,50V
Cgs:0~33nF,50V
Rdump:0~1Ω

SBD
Cd

Rg_off

VCC2Reg.

DC－DC

UVL
E2VEE2VCC2 CN2
VCC2Rg_on

Predrive

VD(15V)Predrive

Rg_onInterface

G2
Rdump

Rg_offGate shut down

SC2
Timer&Reset

Latch

SBD
CdCgs

DetectE2E2
VEE2Connection by harness

Notes1) About the IC which drives gate signal on input side, it is not recommended to use the one whose output
is open collector or open drain type.
2) Rg_on and Rg_off are not installed at the time of shipment. Please solder the chosen resistors.
3) The built-in short-circuit protection circuit does not work in this application example.
4) CN1, CN2 and P-side, N-side correspondence can be swapped.
5) Please design the wiring pattern so that the area surrounded by the input gate signal line becomes as small as
possible to minimize the effect of electromagnetic induction noise.
6) Gate and emitter wiring is recommended to be twisted pair.

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＜Gate Drive Unit＞

PRELIMINARY

VLB512-01R
DRIVER FOR SiC-MOSFET MODULESFOR SAFETY USINGGreat detail and careful attention are given to the production activity of Hics, such as the development, the quality ofproduction, and in itʼs reliability. However the reliability of Hics depends not only on their own factors but also intheir condition of usage. When handling Hics, please note the following cautions.

CAUTIONS
Packing

Carrying

The materials used in packing Hics can only withstand normal external conditions.
When exposed to outside shocks, rain and certain environmental contaminators, thepacking materials will deteriorates. Please take care in handling.
1)
2)
3)
4)
5)

Donʼt stack boxes too high. Avoid placing heavy materials on boxes.
Boxes must be positioned correctly during transportation to avoid breakage.
Don't throw or drop boxes.
Keep boxes dry. Avoid rain or snow.
Minimal vibration and shock during transportation is desirable.

Storage

When storing Hics, please observe the following notices or possible deterioration of
their electrical characteristics, risk of solder ability, and external damage may occur.
1)
Devices must be stored where fluctuation of temperature and humidity isminimal, and must not be exposed to direct sunlight. Store at the normal
temperature of 5 to 30 degrees Celsius with humidity at 40 to 60%.
2)
Avoid locations where corrosive gasses are generated or where much dustaccumulates.
3)
Storage cases must be static proof.
4)
Avoid putting weight on boxes.

Extendedstorage

When extended storage is necessary, Hics must be kept non-processed. When using
Hics which have been stored for more than one year or under severe conditions, besure to check that the exterior is free from flaw and other damages.

Maximumratings

To prevent any electrical damages, use Hics within the maximum ratings. The
temperature, current, voltage, etc. must not exceed these conditions.

Polarity

To protect Hics from destruction and deterioration due to wrong insertion, make sureof polarity in inserting leads into the board holes, conforming to the external view for
the terminal arrangement.

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＜Gate Drive Unit＞

PRELIMINARY

VLB512-01R
DRIVER FOR SiC-MOSFET MODULES

Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble withsemiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention
against any malfunction or mishap.
Notes regarding these materials·These materials are intended as a reference to our customers in the selection of the ISAHAYA products
best suited to the customerʼs application; they don't convey any license under any intellectual property
rights, or any other rights, belonging to ISAHAYA or a third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any
third party's rights, originating in the use of any product data, diagrams, charts or circuit application
examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by
ISAHAYA Electronics Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized
ISAHAYA products distributor for the latest product information before purchasing product listed herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device orsystem that is used under circumstances in which human life is potentially at stake. Please contact
ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor when considering theuse of a product contained herein for any specific purposes, such as apparatus or systems fortransportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce inwhole or in part these materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country otherthan the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or thecountry of destination is prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further
details on these materials or the products contained therein.

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