＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESFEATURES

VLA598-11R>Directly mountable on the IGBT module>Built in the isolated DC-DC converter for gate drive>Output peak current is +/-10A(max)>Electrical isolation voltage is 4000Vrms (for 1 minute)>Built in short circuit protection with soft shut down
>Built in collector clamp circuit>One way power supply system for gate drivers andinput signal (VD=15V)

TARGETED IGBT MODULES
VCES = 1700V series up to 600A class

Built in core HIC(VLA597-01R)

APPLICATIONSInverter, Servo, UPS, or Wind power etc.

BLOCK DIAGRAMTIMER&RESET

LATCH

C1DETECTCollector
clamp

FoH

G1INTERFACEINH
GATE SHUT DOWN

C5E1VCC1VD

UVL
VEE1DC－ACReg.

VCC2UVLGND

VEE2C6TIMER&RESET

LATCH

DETECTCollector
clamp

FoL

G2INTERFACEINL
E2GATE SHUT DOWN

* There is not Gate Resistors at the initial state. So please solder the chosen resistor.

Sep.2021

1

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESOUTLINE

Unit : mmCIRCUIT DIAGRAM
VLA598-11R
VD

VIN(5V)CN1NC
GNDNCGND
VD
GND
VD
GND
FoH

1IC232GND
INL
GND
NC
GND
NC
GND

RG119

D15
D16HIC1(VLA597-01R)

D3D421414Pin No.

Collector
clamp circuit

RG2D13VCC1 D1418212VEE120C5(Ctrip)
22

IC1‐1GND
INH
GND
FoL

24

5CN1

D12361310k

3D23334

RG32910k
FoH

11FoL

1(3M)

D19
D2031

GND

3NC

4GND

5VD

6GND

7VD

8GND

9FoH

10GND

11INH

12GND

13FoL

14GND

D615INL

16GND

C6(Ctrip)32

T1* RG1~4 and C5,6 are open at the initial state.

2NC

2D5VEE23010

CN1 : 3428-6002LCPL

Collector
clamp circuit

RG4

D17
VCC2 D1828

IC1‐2Pin name

1T217NC18GND

19NC20GND

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULES

MAXIMUM RATINGS(unless otherwise noted, Ta=25 ℃)

SymbolItem

Conditions

Ratings

VD

Supply voltage

DC-1 ~ 16.5

V

VI

Input signal voltage

Applied between GND - INH,INL

19V

I_Fo

Fo output current

Sink and source current of Fo terminal+/-10mA-10A10A4000

Vrms

IOHP

Unit

Output peak current

Pulse width 3us

VisoIsolation voltage between
primary and secondary

Sine wave voltage 60Hz, for 1min

Topr

Operating temperature

No condensation allowable-40 ~ 85

deg C

Tstg

Storage temperature

No condensation allowable-40 ~ 85

deg C

IOLP

IdriveGate drive current

Gate average current (Per one circuit)

72

mA

VDC_Link

Main circuit voltage

The power supply voltage between P and N

1200

V

ELECTRICAL CHARACTERISTICS
SymbolItemVD

Supply voltagef( unless otherwise noted, Ta=25 degC, VD=15V, f=5kHz)
Conditions

Limits

Unit

Min

TypMaxRecommended range

14.5

15

15.5

V

Switching frequency

Recommended range
It is limited by gate average current (max:72mA)--

14kHzohm

RG

Gate resistance

Recommended range

1-

-

VI

Input signal voltage

Recommended range

4.5

-

15.5

V

I_Fo

Fo output current

Recommended range

-4-

4mA

VI_H

Input signal highthreshold

-

1.5

1.8

2.1

V

VI_L
VOH

Input signal low threshold
Plus bias output voltage

-0.8

1.1

1.4

V

Input “H”(High active)

13.5

15.2

16.5

VVOL

Minus bias output voltage

Input “L”

--8-

VtPLH

“L-H” propagation time

RG=2.2Ω, f=5kHz, C_load:0.22uF

-

0.18

-

us

tPHL

“H-L” propagation time

RG=2.2Ω, f=5kHz, C_load:0.22uF

-

0.16

-

us

ttrip

Masked time detect
short circuit

Detect pin : over than 15V or open, C5,6 : open

-

2.9

-

us

ttimerTimer

Between start and cancel of protection(Under input signal is off state)

1-2ms

UVLO+_VCC

Under voltage lock outVCC voltage (Operation start)

-

12.6

-

VUVLO-_VCC

Under voltage lock out

VCC voltage (Operation stop)

-

11.7

-VClamp zener voltage

Total zener voltage in collector clamp circuit
at Iz = 1mA , Tj=25 deg C

1282

1350

1418

VSC detect voltage

Collector voltage of IGBT

15--VVz(*1)
VSC*1 : It depends on the condition of use, but actual clamp voltage of collector approximately rises by 300V from 200V to Vz.

3

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESPERFORMANCE CURVES(Unless otherwise noted, Ta=25deg, VD=15V, RG=2.2ohm, driving only single circuit)(ID: Input current for power supply, Idrive: gate average current, Io: DC load)

4

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULES

CALCULATION FOR GATE DRIVE CURRENT (GATE AVERAGE CURRENT)
This product has isolated DCDC converter built in for gate drive.
The maximum output average current is 72mA per one channel.
This current means maximum gate average current.
When you decide the switching frequency,
please check the gate average current by next formula.

Gate charge characteristic of IGBTVGE
15V

Idrive = (Q1＋lQ2l ) x f
 It must be less than 72mAIdrive: Gate average current
Q1: Gate charge at +15V (Read from data sheet of IGBT)
Q2: Gate charge at -7V (Read from data sheet of IGBT)f: Switching frequency of IGBT

Gate charge-7V
Q25Q1

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULES

DEFINITION OF CHARACTERISTICSOPERATION OF SHORT CIRCUIT PROTECTIONNORMAL SWITCHING OPERATION5V

INH, INL

INH, INL

50%Vo(19,29 pin of HIC) 0V

VOH

-5V

Vo
(19,29 pin of HIC)

ttimer

ttrip

0V

5V

VOL

50%

FoH, FoL
tPHL

tPLH

*Tested by RG=2.2Ω, C_load:0.22uF, f=5kHz, ON Duty=50%

APPLICATION EXAMPLE
IGBT Module

VLA598-11R
VD

RC filter~10us
VIN(5V)

CN1

VD
(15V)
5V

4.7kΩ

4.7kΩ

MCU

Input gate signal(5V-----15V )123456789
10
1112
13
14
15
16
17
18
1920NC
GND
NC
GND
VD
GND
VD
GND
FoH
GND
INH
GND
FoL
GND
INL
GND
NC
GND
NC
GND

1IC2324519

RG1

D15
D164HIC1(VLA597-01R)

D3G1E1

D421
14C1Collector
clamp circuit

RG2

D13
VCC1 D14182122

D1236

VEE120C5(Ctrip)
22

IC1‐1
D21310k

33
3432910k

FoH
FoL

RG3

D19
D20

D5
D631

11Collector
clamp circuit

RG4

D17
VCC2 D1828

IC1‐2G2E2

VEE230110C6(Ctrip)
32

T1
T2Note) About the IC which drives gate signal on input side, it is not recommended to use the one whose output isopen collector or open drain type.

6＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULES

OPERATION OF PROTECTION CIRCUIT(1) In case the gate voltage is “H” and the collector voltage is high,this drive unit will recognize the circuit as short circuit andreduce the gate voltage. Besides, put out fault signal (”L”) which
inform that protection circuit is operating at the same time from
Fo terminal (9,13 pin of CN1).
(2) The protection circuit reset and resort to ordinary condition
if input signal is “OFF” when the premised 1~2msec passed.
( “OFF” period needs 10us or more )(3) When the output rises, the masked time detect short circuit (ttrip)
is set up so that on-time of IGBT can be secured properly.

OPERATION FLOW ON DETECTING SHORT CIRCUITSTARTDETECTION OF
SHORT CIRCUITGATE SHUTDOWNTIMER STARTOUTPUT FAULT SIGNALLATCH & TIMER RESET SYSTEM IN SHORTCIRCUIT PROTECTION CIRCUIT

Once the short-circuit protection circuit starts, it shuts down thegate output and keeps alarm output, causing the latch status.
This status is canceled if the input signal is OFF when specific timeelapses after the activation of the short-circuit protection circuit.
Then, gate output depending on input signals becomes possible.
If the input signal is ON when specific time elapses, the latch
status is not canceled: it is canceled when the signal becomes OFF.
As mentioned above, on the latch & timer reset system, the latch
status is resulted after activation of the protection circuit andshutdown of the gate output. Therefore, during this period, gate
output is not made no matter how much input signals are received.
For this reason, it is possible to safely stop the entire equipment
by sending error signals to the microcomputer during this period tostop all gate signals.

END OF TIMER

TIMER
1 ~ 2ms
NoYes

INPUT SIGNAL ISOFFNoYes

CLEAR ALARM
ENABLE OUTPUT

TIMING CHART

INH,INL

VGE(IGBT)VCE(IGBT)

IC(IGBT)

VSC
Short-circuit
occurrence

Masked time (ttrip)
Timer

FoH,FoL

The latch status is canceled.

7

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESABOUT MOUNTING GATE RESISTORS

There is not gate resistors at the initial state.
It is possible to install up to 2 resistors in mount area of gate resistor per one channel.
And there are some variations by combining resistors.
There are some examples in the following chart, please refer to it and set the gate resistors.
And please solder the chosen resistors.
SBD

SBD
Drive
circuit

G1,2

RG1,3

RG2,4

Layout pattern connection on substrate
Example 1
SBD

Example 2

SBD

Drive
circuit

G1,2

RG1,3

SBD

SBD
Drive
circuit

G1,2

RGa

RG2,4

Rg_on RG1,3
Rg_off RG2,4

Rg_on RGa
Rg_off RGa

RG4

RG3RG2

RG1

8

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESABOUT COLLECTOR CLAMP CIRCUIT (1)This drive unit has collector clamp circuit constituted by some zener diodes.
The portion circled with the dotted line is collector clamp circuit in the following chart.
When the IGBT is turned off, the collector voltage increases due to the effect of the stray inductance.
If the collector voltage exceeds this total zener voltage, zener current flow starts and the current is divided
into the one which flows to the gate directly and the one which flows to the buffer section,
eventually resulting in increase of the IGBT gate voltage.
The increase of the gate voltage suppresses the off-speed of the collector current, resulting in suppressionof the di/dt and thus suppression of the collector voltage.

Ls

Integrative stray inductance of the main wiring

VDC_Link
Iz

IC
Vz : Total zener voltage

Collector clamp circuit

InterfaceGate voltage increase

VLA598-11R collector clamp circuit function block diagram

VCE

The maximum VCE value is suppressed by the collector clamp circuit.

VDC_Link

ICThe di/dt is suppressed by the work of the collector clamp circuit.

VGE

9＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESABOUT COLLECTOR CLAMP CIRCUIT (2)The following chart is the collector voltage wave form of IGBT at high current turn off.
If off surge voltage of IGBT is beyond Vz, collector clamp circuit works.
Finally each parameter must be the following relation. Please keep this condition.
Therefore please confirm it in the actual machine evaluation.

VDC_Link < Vosc_peak < Vz
Voff_surge < Maximum rating of IGBTʼs VCES
In case of Vz < Voff_surge , collector clamp circuit will work.

200V ~ 300V (rough guide )It depends on the condition of use

Ls x di/dt
VDC_Link

Voff_surge

VzCollector voltage wave form
at high current turn off

Vosc_peak

VDC_Link(Power supply voltage of main circuit)*Vz : Total zener voltage in collector clamp circuit
Work of collector clamp circuit

Gate voltage
wave form

The next countermeasures are effective to suppress the rise and oscillation of the collector voltage.

P(1) Reducing the value of L1,L2 and Ls(2) Increasing the value of C2(3) Increasing the resistance of off gate resistor(4) Limiting maximum collector current(5) Reducing the VDC_Link

Ls
L2

L1

C2C1
Main smoothing
capacitor
N
Ls:Stray inductance of main wiring
L1:Stray inductance in main smoothing
capacitor
L2:Stray inductance of snubber circuit
C1:Main smoothing capacitor
C2:Snubber capacitor

10＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESABOUT COLLECTOR CLAMP CIRCUIT (3)The total zener voltage in the collector clamp circuit has the tolerance and fluctuation by temperaturesuch as the following chart.
Please keep the main circuit so that the DC_Link voltage does not exceed Vz (total zener voltage).

Total zener voltage characteristic

1700
Max

1600
1500
Vz (V)

1400
1300
Typ1200
Min

1100

Iz=1mA

1000
900‐40 ‐20020 40 60 80 100 120 140
Tj (deg C)

ABOUT COLLECTOR CLAMP CIRCUIT (4)When the collector clamp circuit operates repeatedly, it may be destroyed for heat.
Therefore please keep it to work non-consecutively.

INSTALLATION OF THE DRIVE UNIT ON POWER MODULE
Please solder C/G/E/T pins
Screw to fix the PCBNote) Temperature of soldering iron tip : 360℃ (max) under 5 seconds

11

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULESFOR SAFETY USINGGreat detail and careful attention are given to the production activity of Hics, such as the development, the quality ofproduction, and in itʼs reliability. However the reliability of Hics depends not only on their own factors but also intheir condition of usage. When handling Hics, please note the following cautions.

CAUTIONS
Packing

Carrying

The materials used in packing Hics can only withstand normal external conditions.
When exposed to outside shocks, rain and certain environmental contaminators, thepacking materials will deteriorates. Please take care in handling.
1)
2)
3)
4)
5)

Donʼt stack boxes too high. Avoid placing heavy materials on boxes.
Boxes must be positioned correctly during transportation to avoid breakage.
Don't throw or drop boxes.
Keep boxes dry. Avoid rain or snow.
Minimal vibration and shock during transportation is desirable.

Storage

When storing Hics, please observe the following notices or possible deterioration of
their electrical characteristics, risk of solder ability, and external damage may occur.
1)
Devices must be stored where fluctuation of temperature and humidity isminimal, and must not be exposed to direct sunlight. Store at the normal
temperature of 5 to 30 degrees Celsius with humidity at 40 to 60%.
2)
Avoid locations where corrosive gasses are generated or where much dust
accumulates.
3)
Storage cases must be static proof.
4)
Avoid putting weight on boxes.

Extendedstorage

When extended storage is necessary, Hics must be kept non-processed. When using
Hics which have been stored for more than one year or under severe conditions, besure to check that the exterior is free from flaw and other damages.

Maximumratings

To prevent any electrical damages, use Hics within the maximum ratings. Thetemperature, current, voltage, etc. must not exceed these conditions.

Polarity

To protect Hics from destruction and deterioration due to wrong insertion, make sureof polarity in inserting leads into the board holes, conforming to the external view for
the terminal arrangement.

12

＜Gate Drive Unit＞

VLA598-11R
DRIVER FOR IGBT MODULES

Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble withsemiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention
against any malfunction or mishap.
Notes regarding these materials·These materials are intended as a reference to our customers in the selection of the ISAHAYA products
best suited to the customerʼs application; they don't convey any license under any intellectual property
rights, or any other rights, belonging to ISAHAYA or a third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any
third party's rights, originating in the use of any product data, diagrams, charts or circuit application
examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by
ISAHAYA Electronics Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized
ISAHAYA products distributor for the latest product information before purchasing product listed herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device orsystem that is used under circumstances in which human life is potentially at stake. Please contact
ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor when considering theuse of a product contained herein for any specific purposes, such as apparatus or systems fortransportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce inwhole or in part these materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must beexported under a license from the Japanese government and cannot be imported into a country otherthan the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or thecountry of destination is prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further
details on these materials or the products contained therein.

13