＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESFEATURESVLB505-01R>Single channel simple and easy gate drive system>Wire connection to MOSFET module>Built in the isolated DC-DC converter for gate drive>Output peak current is +/-36A(max)>Built in short circuit protection>Electrical isolation voltage is 6000Vrms (for 1 minute)>Fiber optic interface

TARGETED SiC-MOSFET MODULES
FMF750DC-66A (Mitsubishi)
VCES=3.3kV series 750A class

APPLICATIONS
Medium voltage inverter , HVDC infrastructure , Traction or Wind power etc.

OUTLINE
Clearance
Input side - Output side ➔ 22.5mm

Lot No.

9max

BLOCK DIAGRAM
CN1

Creepage
22.5mm3max

Note1) There is not Gate Resistors at the initial state.
So please solder the chosen resistor.

VCC (TP3)
VD

UVL

Reg.
S (TP4)

DC-AC
GND

Ctrip

CN2

VEE (TP5)D

DETECTReg.

PRE
DRIVE

LATCH & Timer

FOR1
INTER
FACE

HFBR-2522Z

Vo1
(TP1)

Rg_on

Vo2
(TP2)

Rg_off

CN3
GS

SHUT DOWNFAULT OUTG

FOT1
Fo(TP7)
Normal operation➔ “H”
Protection operation ➔ “L”

HFBR-1523Z

TP : Test Pad

SCN4
CN3 : Main output connector
CN4 : Sub connector

Oct.2020

1

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULES

MAXIMUM RATINGS(unless otherwise noted, Ta=25 ℃)

SymbolParameterConditions

VD

Supply voltage

Between VD and GND

IOHPRatings

Unit

16

V-36

A

36

A

Output peak current

Pulse width 3us

VisoIsolation voltage between
primary and secondary

Sine wave voltage 60Hz, for 1min

6000

Vrms

Tc

Case temperature

Surface temperature of power MOSFET

100deg C

Topr

Operating temperature

No condensation allowable-40 ~ 85deg CTstg

Storage temperature

No condensation allowable-40 ~ 85deg CIOLPIdrive

Gate drive current

Gate average current

200mA

VC

Peak collector voltage

Peak terminal voltage of CN23300

V

ELECTRICAL CHARACTERISTICS(unless otherwise noted, Ta=25℃,VD=15V, Rg_on=2Ω,Rg_off=1Ω, f=3kHz)

SymbolParameter

Conditions

VD

Supply voltage

f
RG

Limits

UnitMin

TypMaxRecommended range

14.5

15

15.5

V

Switching frequency

Recommended range
It is limited by gate average current (max:200mA)--10kHz

Gate resistanceRecommended range (Total compound value)

0.22--ΩVOH

Plus bias output voltage

Idrive = 0 ~ 200mA

161718VVOL

Minus bias output voltage

Idrive = 0 ~ 200mA--11-VtPLH“L-H” propagation time

IF=30mA, Fiber length=50cm, C_load:0.57uF

0.2

0.4

0.8

us

tPHL

“H-L” propagation time

IF=30mA, Fiber length=50cm, C_load:0.57uF

0.1

0.3

0.5

us

ttimerTimer

Between start and cancel of protection(Under input signal is off state)

1-2msttrip

Masked time detectshort circuit

Detect terminal (CN2) : over than 15V or open-

3-

usVSC

SC detect voltage

Drain voltage of MOSFET15--V

UVLO+_VCC

Under voltage lock out(Operation start)

VCC voltage

-

14.4

-

V

UVLO-_VCC

Under voltage lock out(Operation stop)

VCC voltage

-

13.8

-

V2

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESPERFORMANCE CURVES(Unless otherwise noted, Ta=25deg, VD=15V, RG_on=2Ω,RG_off=1Ω,f=3kHz)(ID: Input current for power supply, Idrive: gate average current, Io: DC load)3

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULES

4

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESCONNECTION EXAMPLE 1

Gate drive unit VLB505(High side)
Wire cable for gate drive*Less than 20cm (rough guide)( 2 parallel )Adaptor Unit
(VLA595)

Gate drive unit VLB505(Low side)
Wire cable for low sidedrain sense
Wire cable for high sidedrain sense

Note) When gate drive cable exceeds 20cm, please make it a twisted pair.

( 4 parallel )5＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESCONNECTION EXAMPLE2( 2 parallel )Wire cable for gate drive*Less than 20cm (rough guide)

VLB505 (High side)

VLB505 (Low side)

Wire cable for high sidedrain sense

Wire cable for low sidedrain sense

Note) When gate drive cable exceeds 20cm, please make it a twisted pair.

VLB505 (High side)( 4 parallel )VLB505 (Low side)6

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESAPPLICATION EXAMPLE1( single connection 1 )

CN1

VCCVD
UVL
S

DC-AC
GND

Ctrip

CN2VEE

L/F
DETECTReg.

LATCH & Timer

CN3PREDRIVE

FOR1INTER
FACE

CN2

SHUT DOWNFAULT OUT

321TLAC

321CN1

FOT1

VLB505

CN4VLA595
CN1

VCC
VD
UVL
S

DC-AC
GND

Ctrip

CN2

VEE

L/F
DETECTReg.

LATCH & Timer

CN3PRE
DRIVE

FOR1
INTER
FACE
SHUT DOWNFAULT OUT

FOT1

VLB5057CN4CN4321TLAC

321CN3

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESAPPLICATION EXAMPLE2( single connection 2 )

CN1

VCC
VDUVLS

DC-AC
GND

Ctrip

CN2VEE

L/F
DETECTReg.

LATCH & Timer

CN3PRE
DRIVE

FOR1
INTER
FACE

CN2

SHUT DOWNFAULT OUT

321TLAC

321CN1

FOT1

VLB505

CN4VLA595
CN1

VCC
VD
UVL
S

DC-AC
GND

Ctrip

CN2

VEE

L/F
DETECTReg.

LATCH & Timer

CN3PRE
DRIVE

FOR1
INTER
FACE
SHUT DOWNFAULT OUT

FOT1

VLB5058CN4CN4321TLAC

321CN3

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESAPPLICATION EXAMPLE3( 3 parallel connection )

CN1

VCC
VD
UVLS

DC-AC
GND

Ctrip
VEE

CN2

L/F

DETECTReg.

LATCH & Timer

CN3PRE
DRIVE

FOR1
INTER
FACE

CN2

SHUT DOWNFAULT OUT

321TLAC

L/F

321CN1

CN2321TLAC

L/F

321

CN1

CN2321

TLAC

321

CN1

FOT1

VLB505CN1

CN4

VLA595

VLA595

VLA595

L/F

L/F

L/F

VCC
VD
UVL
S

DC-AC
GND

Ctrip
VEE

CN2

DETECTReg.

LATCH & Timer

CN3

PRE
DRIVE

FOR1
INTER
FACE
SHUT DOWNFAULT OUT

CN4321TLAC

FOT1

VLB505

CN49321CN3

CN4321TLAC321CN3CN4321TLAC

321CN3

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULES

CALCULATION FOR GATE DRIVE CURRENT (GATE AVERAGE CURRENT)
Gate charge characteristic of MOSFET

This product has isolated DCDC converter built in for gate drive.
The maximum output average current is 200mA.
This current means maximum gate average current.
When you decide the switching frequency,
please check the gate average current by next formula.

VGE
17V

Idrive = (Q1＋lQ2l ) x f x N
 It must be less than 200mAIdrive: Gate average current
Q1: Gate charge at +17V (Read from data sheet of MOSFET)
Q2: Gate charge at -11V (Read from data sheet of MOSFET)f: Switching frequency of MOSFETN: Parallel number

Gate charge-11V
Q2

Q1

DEFINITION OF CHARACTERISTICS
Normal switching operation

Operation of short circuit protection
IF(Primary)

30mA
IF(Primary) 50%

Vo1(TP1)

VOH

Vo1
(TP1)

Vo2(TP2)

0V
-5V

15V

Fo(TP7)tPHL

ttimer

ttrip

0V

VOL
tPLH

Vo2(TP2)

0V

Fault output(Primary)

Tested byf=3kHz, Duty=50%

INTERFACE APPLICATION EXAMPLEVLB505
VCC

CN1
VD
15V

5V

VD
UVLReg.
S (TP4)

DC-AC
GND

IF

Ctrip

CN2

VEE

HFBR-1522Z etc.
LEDdrivecircuit

DETECTReg.

Vo1(TP1)

LATCH & Timer

FOR1
INTER
FACE

5V

Optical fiber cablefor gate signal

4.7k

SHUT DOWNFAULT OUT Fo(TP7)HFBR-2522Z
FOT1

Vo2(TP2)

Fo
Normal operation ➔ “H”
Protection operation ➔ “L”

Fault output
HFBR-1523Z

0.1μF

CN3

PRE
DRIVE

Gate signal

CN3 : Main output connector
CN4 : Sub connector

HFBR-2523Z etc.
Optical fiber cablefor fault signal

10

CN4

TP : Test Pad

MOSFET module

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULES

OPERATION OF PROTECTION CIRCUITOPERATION FLOW ON DETECTING SHORT CIRCUIT(1) In case the gate voltage is “H” and the drain voltage is high,this drive unit will recognize the circuit as short circuit andreduce the gate voltage. Besides, put out fault signal (”L”)
which inform that protection circuit is operating at the sametime from Fo terminal (Test Pad7).
(2) The protection circuit reset and resort to ordinary condition
if input signal is “OFF” when the premised 1~2msec passed.
( “OFF” period needs 10us or more )(3) When the output rises, the masked time detect short circuit (ttrip)
is set up so that on-time of MOSFET can be secured properly.

STARTDETECTION OF
SHORT CIRCUITGATE SHUTDOWNTIMER STARTOUTPUT FAULT SIGNALLATCH & TIMER RESET SYSTEM IN SHORTCIRCUIT PROTECTION CIRCUIT
Once the short-circuit protection circuit starts, it shuts down
the gate output and keeps fault output, causing the latch
status. This status is canceled if the input signal is OFF
when specific time elapses after the activation of the shortcircuit protection circuit. Then, gate output depending oninput signals becomes possible. If the input signal is ON
when specific time elapses, the latch status is not canceled:
it is canceled when the input signal becomes OFF.

END OF TIMER

TIMER
1 ~ 2msNoYes

As mentioned above, on the latch & timer reset system, thelatch status is resulted after activation of the protection
circuit and shutdown of the gate output. Therefore, during
this period, gate output is not made no matter how much
input signals are received. For this reason, it is possible tosafely stop the entire equipment by sending error signals to
the microcomputer during this period to stop all gate signals.

INPUT SIGNAL ISOFF

NoYes

CLEAR ALARM
ENABLE OUTPUT

TIMING CHART
IF(Primary LED)

VGS(MOSFET)

VDS(MOSFET)

Arm-Short-circuit
occurrenceID(MOSFET)
Masked time (ttrip)

TimerFo(TP7)

The latch status is canceled.
Fault output(Primary)11

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESABOUT MOUNTING GATE RESISTORS
There is not Gate Resistors on this unit at the initial state.
It is possible to install up to 4 resistors in mount area of gate resistor.
And there are some variations by combining resistors.
There are some examples in the following chart, please refer to it and set the gate resistors.
And please solder the chosen resistors.
RG1

Drivecircuit

Vo1
Vo2

CN3

RG2

G

RG3

E

RG4

Layout pattern connection on substrate: Gate resistor mount part (Initial is open)
Example 2

Example 1

Drivecircuit

Vo1

CN3

RG1

GRG3

Vo1

Drivecircuit

EVo2

Vo2

Rg_on ➔RG1
Rg_off ➔RG3

RG1
RG2

CN3

GRG3

E

RG4

Rg_on ➔RG1//RG2
Rg_off ➔RG3//RG4

THE WAY TO CALCULATE GATE RESISTANCE VALUE OF PARALLEL CONNECTION
RG_ON/1elem. = Gate ON resistance value per one element = Rb + (N x Rg_on)
RG_OFF/1elem. = Gate OFF resistance value per one element = Rb + (N x Rg_off)
Rb: Balance resistance value on adaptor unit
N: Parallel number of modules
Rg_on : Gate ON resistance value on VLB505
Rg_off : Gate OFF resistance value on VLB505

VCC

CN1
VD
UVL

Rg_onReg.
S (TP4)

DC-AC
GND

Ctrip

CN2VEEDDETECTReg.

Vo1(TP1)

LATCH & Timer

FOR1
INTER
FACE

HFBR-2522Z
FOT1

CN3PREDRIVENote)

SHUT DOWNFAULT OUT Fo(TP7)

GVo2(TP2)

S
GS
Rg_off

HFBR-1523Z

12CN4

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESDETAILS OF CONNECTOR
CN3: 53259-0229 (Molex)

CN1 : 53259-0229 (Molex)
Pin No.

SignalPin No.

Signal1VD

1Source

2

GND

2

Gate

CN4: 53259-0229 (Molex)

CN2: 53259-0229 (Molex)
Pin No.

SignalPin No.

Signal1

Drain

1Source

2

Drain

2

Gate

CN2

pin2
pin1

Screw hole Φ3.5mm x 6pin1
pin2

pin2
CN4 pin1
CN3 pin2
pin1

CN1
CN1

We recommend following parts or equivalent product for wire cable
HOUSINGTERMINAL

Maker

51067-0200

50217-8100

Molex

INSTALLATION OF THE DRIVE UNIT ON METALLIC CASE
When fixing this drive unit on a metallic case, please use the spacer made of the resin.
Screw& washerScrew& washer

Metallic caseSpacer made of the resin

13

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESFOR SAFETY USINGGreat detail and careful attention are given to the production activity of Hics, such as the development, the quality ofproduction, and in it’s reliability. However the reliability of Hics depends not only on their own factors but also intheir condition of usage. When handling Hics, please note the following cautions.

CAUTIONS
Packing

Carrying

The materials used in packing Hics can only withstand normal external conditions.
When exposed to outside shocks, rain and certain environmental contaminators, thepacking materials will deteriorates. Please take care in handling.
1)
2)
3)
4)
5)

Don’t stack boxes too high. Avoid placing heavy materials on boxes.
Boxes must be positioned correctly during transportation to avoid breakage.
Don't throw or drop boxes.
Keep boxes dry. Avoid rain or snow.
Minimal vibration and shock during transportation is desirable.

Storage

When storing Hics, please observe the following notices or possible deterioration of
their electrical characteristics, risk of solder ability, and external damage may occur.
1)
Devices must be stored where fluctuation of temperature and humidity isminimal, and must not be exposed to direct sunlight. Store at the normal
temperature of 5 to 30 degrees Celsius with humidity at 40 to 60%.
2)
Avoid locations where corrosive gasses are generated or where much dust
accumulates.
3)
Storage cases must be static proof.
4)
Avoid putting weight on boxes.

Extendedstorage

When extended storage is necessary, Hics must be kept non-processed. When using
Hics which have been stored for more than one year or under severe conditions, besure to check that the exterior is free from flaw and other damages.

Maximumratings

To prevent any electrical damages, use Hics within the maximum ratings. The
temperature, current, voltage, etc. must not exceed these conditions.

Polarity

To protect Hics from destruction and deterioration due to wrong insertion, make sureof polarity in inserting leads into the board holes, conforming to the external view for
the terminal arrangement.

14

＜Gate Drive Unit＞

VLB505-01R
DRIVER FOR SiC-MOSFET MODULESKeep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products betterand more reliable, but there is always the possibility that trouble may occur with them. Trouble withsemiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention
against any malfunction or mishap.
Notes regarding these materials·These materials are intended as a reference to our customers in the selection of the ISAHAYA products
best suited to the customer’s application; they don't convey any license under any intellectual property
rights, or any other rights, belonging to ISAHAYA or a third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any
third party's rights, originating in the use of any product data, diagrams, charts or circuit application
examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent
information on products at the time of publication of these materials, and are subject to change by
ISAHAYA Electronics Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized
ISAHAYA products distributor for the latest product information before purchasing product listed herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device orsystem that is used under circumstances in which human life is potentially at stake. Please contact
ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor when considering theuse of a product contained herein for any specific purposes, such as apparatus or systems fortransportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce inwhole or in part these materials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country otherthan the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or thecountry of destination is prohibited.
·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further
details on these materials or the products contained therein.

15