HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULESDESCRIPTION
VLA500-02R is a hybrid integrated circuit designed for driving

Dimensions: mmOUTLINE DRAWINGn-channel IGBT modules in any gate-amplifier application.
This device include the isolated type DC-DC converter for aGate drive. Therefore design of the gate power supply is not

83.0 MAX

required.
33.0MAXThe system of built-in short circuit protection provide a margin
to time by function to maintain reverse bias for a predetermined
time after the detection of short circuit.
Recommended IGBT modules:
VCES=600V series up to 600A class
VCES=1200V series up to 1400A class

5.0MAX

5.0 MAX•Built-in the isolated type DC-DC converter for gate drive

1•SIP outline allows more space on mounting area

11.5MAX

4.5MAX

2.54

FEATURES

15.5MAX
30•Built-in short circuit protection (With fault output)•Variable fall time on activity of short circuit protection•Electrical isolation voltage between input and output is 2500Vrms (for 1minute)•HCMOS compatible input.

APPLICATIONS
To drive IGBT modules for inverter or AC servo systems application

BLOCK DIAGRAM
19 Vcc1VD

2INVERTERGi

REGULATORLATCH

DETECTttrip
29 CONTROL PIN

CIRCUIT30

DETECTPIN

20GND

34TIMER&RESETCIRCUIT

VI+ 6

INTERFACE

25

COLLECTOR

2623Vo24

GATE SHUTDOWNCIRCUIT180 ohm
90%

VI-27

SHUT-DOWNSPEED
CONTROL

28 FAULTOUTPUT
21722

1VEE

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULES

MAXIMUM RATINGS (Unless otherwise noted, Ta=25°C)
SymbolRatings

Unit

VD

Supply voltage

DC-1～26.4

V

VI

Input signal voltage

Applied between pin 6 – 7
50% duty cycle, pulse width 1ms-1 ~ +7VVO

Output voltage

When the output voltage is “H”

VCCV-12AIOHPParameterConditions

Output current

Pulse width 2µs

VisoIsolation voltage

Sine wave voltage 60Hz, for 1min.

TC1

Case temperature1

Surface temperature(opto-coupler mounting part) (*3)

85°C

TC2

Case temperature2

Surface temperature(excepting opto-coupler mounting part)

100°C

IOLP

12A

2500

Vrms

Topr

Operating temperature

No condensation allowable-20 ~ +60°C

Tstg

Storage temperature-25 ~ +100 (*1)

°C20mAIFO

Fault output current

No condensation allowable
Applied pin 28

VR30

Input voltage to pin 30

Applied pin 30

IdriveGate drive current

Gate average current

50

V210 (*2)mA(*1) Differs from H/C condition(*2) Refer to Idrive-Ta CHARACTERISTICS (Needs derating)(*3) Refer to the below figure.
Tc1 measurement point(opto-coupler mounting part)Marking side

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta=25°C, VD=24V, RG=2.2 ohm)
SymbolParameter

ConditionsLimits
Typ24

Max
25.2
5.25

VD

Supply voltage

Recommended range

Min22.8

VINPull-up voltage on input side

Recommended range

4.75

5UnitVV

IIH“H” input current

Recommended range

15.2

1619mAｆ

Switching frequency

Recommended range

--20

kHz

RG

Gate resistance

Recommended range

1--ohmIIH“H” input current

VIN = 5V

-

16-mA

Vcc

Gate positive supply voltage

―

15.2

-

17.5

VVEE

Gate negative supply voltage

―

-6-

-11.5

V

η

Gate supply efficiency

6070－%

Load current = 210mA
η = (Vcc+lVEE l) x 0.21 / (24 x ID) x 100

VOH“H” output voltage

10k ohm connected between pin 23-20

1415.3

16.5

VVOL“L” output voltage

10k ohm connected between pin 23-20-5.5--11VtPLH“L-H” propagation time

IIH = 16mA

0.3

0.6

1µs

tr

“L-H” rise time

IIH = 16mA

-0.3

1µs

tPHL

“H-L” propagation time

IIH = 16mA

0.6

1

1.3µs

tf

“H-L” fall time

IIH = 16mA

-0.3

ttimerTimer

Between start and cancel (under input sign “L”)

1-12msIFO

Fault output current

Applied pin 28, R = 4.7k ohm-5-mA

ttrip1

Controlled time detect short circuit 1

Pin 30 : 15V and more,

-2.8-

µs

ttrip2Controlled time detect short circuit 2(*4)

Pin 30 : 15V and more, pin 29-21,22 : 10pF
(connective capacitance)

-

3.2-

µs

VSCSC detect voltage

Collector voltage of module15--

Vpin 29 : open(*4) Length of wiring of condenser controlled time detect short-circuit is within 5cm from pin 21,22 and 29 coming and going.

2µs

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULESPERFORMANCE CURVES
VCC,|VEE|-IO CHARACTERISTICS（TYPICAL）

VCC、|VEE|-Ta CHARACTERISTICS（TYPICAL）

242422

VD=24VΩRG=1Ω
Load：C=0.47uF
f=10KHz D.F.=50%

20

VCC、|VEE|(V)

18VCC

1614
1218
16

VD=22.8V

1412

VD=25.2V

VD=22.8V

6640204060

800tPHL
1.00.80.6tPLH
0.4
0.2
0.00204060

80

1.6

1.2
1.0tPHL
0.8
0.6
0.4tPLH

0.20.03.5999

CONTROLLED TIME DETECTSHORT CIRCUIT ttrip(μs)(μs)
短絡検出抑制時間ttrip(μs)
短絡検出抑制時間
ｔｔｒｉｐ（μｓ4.5
4.5
ｔｔｒｉｐ２（Ｃｔｒｉｐ=10pF）

3.5
3.5
3.0
3.0
ｔｔｒｉｐ1（Ｃｔｒｉｐ=0pF）

2.0
2.0
1.5
1.5

5.5

6.0

ＶＤ＝１５Ｖ
VD=24V888

Ta=25℃
Ｔａ＝２５℃

777
666
555
444
333
222
111
000

1.0
1.0-20-20

5.0

ｔｔｒｉｐ－Ｃｔｒｉｐ 特性

VD=24V
VD=24V
Ω
RG=1Ω
Ω
RG=1Ω
負荷:C=0.47uF
Load:C=0.47μF
Load:C=0.47uF

2.5
2.5

4.5

ttrip-Ctrip
特性ttrip-Ctrip
CHARACTERISTICS
（代表例）
（代表例）
（TYPICAL）

ttrip-Ta CHARACTERISTICS（代表例）（TYPICAL）

4.0
4.04.0INPUT SIGNAL VOLTAGE VI(V)ｔｔｒｉｐ - Ｔａ 特性

5.0
5.00.25

VD=24VΩRG=1Ω
Ta=25℃
Load:C=0.47uF

1.4

AMBIENT TEMPERATURE Ta(℃)

5.5
5.50.2tPLH、tPHL-VI CHARACTERISTICS（TYPICAL）

1.2

6.0
6.0

0.15

tPLH、tPHL-Ta CHARACTERISTICS（TYPICAL）
VD=24VΩ
RG=1Ω
Ta=25℃
Load:C=0.47uF

-20

0.1

LOAD CURRENT IO(A)（Pin：１９－２１、２２）

1.6
1.40.05

AMBIENT TEMPERATURE Ta(℃)

PROPAGATION DELAY TIME “L-H” tPLH(μS)
(μs)
(μs)
PROPAGATION DELAY TIME “H-L” tPHL(μS)-20

CONTROLLED TIME DETECT

VD=24V88(μs)SHORT CIRCUIT ｔｔｒｉｐ1,ｔｔｒｉｐ２（μｓttrip1,ttrip2(μs)(μs)
短絡検出抑制時間

VD=24V

VD=25.2V

10|VEE|

10PROPAGATION DELAY TIME “L-H” tPLH(μS)
PROPAGATION DELAY TIME “H-L” tPHL(μS)

Ta=25℃
DC Load20

VCC、|VEE|(V)

2200

080
20406080
AMBIENT周囲温度
TEMPERATURE
Ｔａ（℃） Ta（℃）

252525505050757575100100100125125125

CONNECTIVE CAPACITANCE Ctrip(pF)

短絡検出抑制時間調整外部容量 Ctrip(pF)
短絡検出抑制時間調整外部容量Ｃｔｒｉｐ（ｐＦ）(Pin：２９-２１)(端子29-21間)（端子２９－２１間）

3

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULES

ID-IO CHARACTERISTICS（TYPICAL）

VOH,|VOL|-Ta CHARACTERISTICS（TYPICAL）
22

VD=24V
Ta=25℃

0.5“H” OUTPUT VOLTAGE VOH(V)“L” OUTPUT VOLTAGE |VOL|(V)INPUT CURRENT ID(A)

0.6

0.4
0.3
0.2
0.1
0

VD=24VΩRG=1Ω
Load：C=0.47uF

20
18

VOH

16141210|VOL|

8640.00

0.05

0.10

0.15

0.200.25‐2020406080

LOAD CURRENT Io(A)(Pin：１９－２１、２２)

AMBIENT TEMPERATURE Ta(℃)ηη-Idrive CHARACTERISTICS

VCC、|VEE|-VD CHARACTERISTICS（TYPICAL）（TYPICAL）

2080
VD=24V
Ta=25℃

70018

Ta=25℃

VCC

60

14

VCC、|VEE|(V)η
EFFICIENCY η（％）

16504030

1210

|VEE|

8620
410

2000.00

0.05

0.10

0.15

0.20

0.25

22GATE DRIVE CURRENT Idrive(A)75252627

Io=0.1A
Ta=25℃70

VD=24VηEFFICIENCY η（％）

GATE DRIVE CURRENT Idrive(A)ΩRG=1Ω
Load：C=0.47uF0.2024η D CHARACTERISTICS
η-V（TYPICAL）

Idrive-Ta CHARACTERISTICS（MAXIMUM RATING）

0.2523

SUPPLY VOLTAGE VD(V)

0.15
VD=25.2V
0.10

0.05

6560555045400.00
0204060228023242526

SUPPLY VOLTAGE VD(V)AMBIENT TEMPERATURE Ta（℃）

427HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULES

DEFFINITION OF CHARACTERISTICS
VI(1)SWITCHING OPERATION(2)OPERATION OF SHORT CIRCUIT PROTECTION
VIVO

trtf

0V

VO 0V-5V

90%ttrip1,250%

tPLH

10V

Pin 28 output

10%

ttimer
10V0VtPHL

APPLICATION EXAMPLE

D1301232C124＋VD

Dz2Dz3193

CM1400DU-24NF etc.

RG

254

VLA500-02R

2620

CMOS etc.

＋6Control signal→＋ C2C321

Dz1227Ctrip

2927Cs

3.3k ohm

28
EXAMPLE OF INPUT CIRCUIT

VIN

4.7k ohm
6pin

VD=24V +/-5%
VIN=5V +/-5%
C1 : 100uF (Low impedance)
C2 : 1mF (Low impedance)
C3 : 1mF (Low impedance)
Ctrip : Depend on RG
Cs : Depend on surge voltage
Dz1 : 30V
Dz2,3 : 18V
D1 : Fast recovery diode (trr : 200ns Max)

HC04 etc.

PRECAUTION(1)Voltage compensate capacitors are expected to be located as close as possible to the Hybrid IC.

(2)

Minimize the area of closed circuit of gate circuit so as not to be affected by induction noise.

(3)

D1 requires approximately the same voltage of power modules.

(4)

When recovery current flow in D1 , pin 30 is applied high voltage .
In that case , counterplan for protection which insert a zener diode between pin21,22 and 30 are necessary like above diagram.

(5)

When you make late speed of reverse bias at the time of short circuit protection operation,please adjust and connect a capacitor between the 21,22 and 27.
5

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULES

OPERATION OF PROTECTION CIRCUIT

ADJUSTMENT OF OUTPUT FALL TIME

(1)

In case the gate voltage is “H” and the collector voltage is high,(When the protection circuit is operating)this Hybrid IC will recognize the circuit as short circuit and immediately

In case you want to decrease the speed of reverse bias when the(2)reduce the gate voltage . Besides, put out a fault sign (“L”) which

protection circuit is operating, you can adjust that speed by connecting

inform that protection circuit is operating at the same time from pin 28 .

the capacitor (Cs) between pin 21,22 and 27.

The protection circuit reset and resorted to ordinary condition if input(Please refer to under figures. )sign is “L” when the predetermined time(1 ~ 2ms) passed.
INPUTSIGNAL(“L” period needs 15us or more )(3)

When the output rises, the controlled time detect short circuitt1(Typ 2.8us) is set up so that on-time of IGBT can be secured properly.
It is possible to adjust that time by connecting the capacitor (Ctrip)

t290%

between pin 21,22 and 29.

50%

OPERATION FLOW ON DETECTING SHORT CIRCUIT

0%

10%

Vo

STARTt1,t2 VS. Cs CHARACTERISTICS(TYPICAL)

FALL TIME ON ACTIVITY OF SHORT CIRCUITPROTECTION t1. t2 (us)50
DETECTION OF
SHORT CIRCUITGATE SHUTDOWNCIRCUIT OPERATE

1 ~ 2ms

TIMER STARTOUTPUT FAULT SIGNEND OF TIMER

NO

YES

INPUT SIGN IS “L”

NOYESRESET

Note : “L” output voltage with protection circuit operating is about VEE + 2V.

6V
D=24V
VD=15V
Ta=25degC
Ta=25deg.

4540
3530t22520
1510t1500200400600CONNECTIVE CAPACITANCE Cs (pF)
(PIN:27-21)800

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULESFOR SAFETY USINGGreat detail and careful attention are given to the production activity of Hics, such as the development, the quality of production, andin its reliability.

However the reliability of Hics depends not only on their own factors but also in their condition of usage. Whenhandling Hics, please note the following cautions.

CAUTIONSPacking

The materials used in packing Hics can only withstand normal external conditions.
When exposed to outside shocks, rain and certain environmental contaminators, the packing materials
will deteriorates. Please take care in handling.

CarryingStorage

1)

Don’t stack boxes too high. Avoid placing heavy materials on boxes.

2)

Boxes must be positioned correctly during transportation to avoid breakage.

3)

Don't throw or drop boxes.

4)

Keep boxes dry. Avoid rain or snow.

5)

Minimal vibration and shock during transportation is desirable.

When storing Hics, please observe the following notices or possible deterioration of their electricalcharacteristics, risk of solder ability, and external damage may occur.
1)

Devices must be stored where fluctuation of temperature and humidity is minimal, and must not
be exposed to direct sunlight. Store at the normal temperature of 5 to 30 degrees Celsius withhumidity at 40 to 60%.

2)

Extended storage

Avoid locations where corrosive gasses are generated or where much dust accumulates.

3)

Storage cases must be static proof.

4)

Avoid putting weight on boxes.

When extended storage is necessary, Hics must be kept non-processed. When using Hics whichhave been stored for more than one year or under severe conditions, be sure to check that the exterior
is free from flaw and other damages.

Maximum ratings

To prevent any electrical damages, use Hics within the maximum ratings. The temperature, current,voltage, etc. must not exceed these conditions.

Polarity

To protect Hics from destruction and deterioration due to wrong insertion, make sure of polarity ininserting leads into the board holes, conforming to the external view for the terminal arrangement.

7

HYBRID IC

VLA500-02R
DRIVER FOR IGBT MODULES

Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, butthere is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire orproperty damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable material or (3) prevention against any
malfunction or mishap.
Notes regarding these materials·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to thecustomer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging toISAHAYA or a third party.
·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listedherein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA Electronics Corporation or anauthorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes, suchas apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part thesematerials.
·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under alicense from the Japanese government and cannot be imported into a country other than the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination isprohibited.
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8Mar. 2012