S-5712E Series
www.ablic.com

HIGH-SPEED LOW VOLTAGE OPERATIONOMNIPOLAR / UNIPOLAR DETECTION TYPE
HALL EFFECT SWITCH IC
Rev.1.1_00© ABLIC Inc., 2017-2021

This IC, developed by CMOS technology, is a high-accuracy Hall effect switch IC that operates at a low voltage with a highspeed detection. The output voltage changes when this IC detects the intensity level of magnetic flux density. Using this IC
with a magnet makes it possible to detect the open / close in various devices.
High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package.
Due to its low voltage operation and low current consumption, this IC is suitable for battery-operated portable devices. Also,
due to its high-accuracy magnetic characteristics, this IC can make operation's dispersion in the system combined withmagnet smaller.
ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall ICs forcustomer systems. Our magnetic simulation service will reduce prototype production, development period and development
costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetic simulation service, contact our sales representatives.

 Features• Pole detection*1:• Output logic*1:• Output form*1:• Magnetic sensitivity*1:• Operating cycle (current consumption):• Power supply voltage range:• Operation temperature range:• Lead-free (Sn 100%), halogen-free

Detection of omnipolar, S pole or N pole
Active "L", active "H"
Nch open-drain output, CMOS output
BOP = 3.0 mT typ.
BOP = 4.5 mT typ.
BOP = 7.0 mT typ.
Product with omnipolar detectiontCYCLE = 0.10 ms (IDD = 640 μA) typ.
Product with S pole or N pole detectiontCYCLE = 0.05 ms (IDD = 640 μA) typ.
VDD = 1.6 V to 3.5 V
Ta = −40°C to +85°C*1. The option can be selected.

 Applications• Mobile phone, smart phone• Notebook PC, tablet PC• Digital video camera• Plaything, portable game
• Home appliance Packages• SOT-23-3• SNT-4A

1

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
 Block Diagrams
1. Nch open-drain output product
VDD

OUT

*1

*1

Chopping
stabilized amplifier
VSS*1. Parasitic diodeFigure 1

2. CMOS output product
VDD
*1

*1

OUT
Chopping
stabilized amplifier

VSS*1. Parasitic diodeFigure 22*1

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
 Product Name Structure
1. Product nameS-5712

E

x

x

x

x

-

xxxx

U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and packing specifications*1
M3T1: SOT-23-3, Tape
I4T1:
SNT-4A, Tape
Magnetic sensitivity
1: BOP = 3.0 mT typ.
2: BOP = 4.5 mT typ.
3: BOP = 7.0 mT typ.
Output logic
L: Active "L"
H: Active "H"
Pole detection
D: Detection of omnipolar
S: Detection of S pole
N: Detection of N pole
Output form
N: Nch open-drain output
C: CMOS output
Operating cycle
E: tCYCLE = 0.10 ms typ.
(Product with omnipolar detection)
tCYCLE =0.05 ms typ.
(Product with S pole or N pole detection)*1. Refer to the tape drawing.

2. Packages
Table 1 Package Drawing Codes
Package Name
SOT-23-3
SNT-4A

Dimension
MP003-C-P-SD
PF004-A-P-SD

Tape
MP003-C-C-SD
PF004-A-C-SD

Reel
MP003-Z-R-SD
PF004-A-R-SD

Land−
PF004-A-L-SD

3

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
3. Product name list
3. 1 SNT-4A
3. 1. 1 CMOS output product
Table 2
Product Name

Operating Cycle(tCYCLE)

S-5712ECDH1-I4T1U
S-5712ECDH3-I4T1U

0.10 ms typ.
0.10 ms typ.

CMOS output
CMOS output

S-5712ECSL2-I4T1U
S-5712ECSL3-I4T1U

0.05 ms typ.
0.05 ms typ.

CMOS output
CMOS output

Output Form

Pole Detection

Output Logic

Omnipolar
Omnipolar
S poleS poleActive "H"
Active "H"
Active "L"
Active "L"

Remark Please contact our sales representatives for products other than the above.

4

Magnetic Sensitivity(BOP)
3.0 mT typ.
7.0 mT typ.
4.5 mT typ.
7.0 mT typ.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
 Pin Configurations
1. SOT-23-3
Table 3Top view

Pin No.

1

2

SymbolPin Description

1

VSS

GND pin2

VDD

Power supply pin

3

OUT

Output pin

3

Figure 3

2. SNT-4A
Table 4Top view
12

43

Figure 4

Pin No.

SymbolPin Description

1

VDD

Power supply pin

2

VSS

GND pin3

NC*1

No connection

4

OUT

Output pin*1. The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.

5

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
 Absolute Maximum Ratings
Table 5
Item

SymbolPower supply voltage

VDD

Output current

IOUT
Nch open-drain output productOutput voltage

VOUT(Ta = +25°C unless otherwise specified)Absolute Maximum Rating
Unit
VSS − 0.3 to VSS + 7.0

V

±1.0

mA

VSS − 0.3 to VSS + 7.0

V

VSS − 0.3 to VDD + 0.3

VOperation ambient temperatureTopr−40 to +85°C

Storage temperature

Tstg−40 to +125

°C

CMOS output productCaution The absolute maximum ratings are rated values exceeding which the product could suffer physicaldamage. These values must therefore not be exceeded under any conditions.

 Thermal Resistance Value
Table 6
Item

SymbolCondition

Board A
Board B
Board C
SOT-23-3
Board D
Board E
Junction-to-ambient thermal resistance*1 θJA
Board A
Board B
SNT-4A
Board C
Board D
Board E
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark6

Refer to " Power Dissipation" and "Test Board" for details.

Min.
−
−
−
−
−
−
−
−
−
−

Typ.
200
165
−
−
−
300
242
−
−
−

Max.
−
−
−
−
−
−
−
−
−
−

Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series Electrical Characteristics
1. Product with omnipolar detection
1. 1 S-5712ExDxx
Table 7
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item

SymbolPower supply voltage VDD
Current consumption IDD

Output voltage

VOUT

Leakage current

ILEAK

Operating cycletCYCLE

Condition

Min.

Typ.

Max.

Unit

−

1.60
−

1.85
640

3.50
1000

V
μA

Test
Circuit
−
1

−

−

0.4

V

2

−

−

0.4

V

2

VDD −
0.4

−

−

V

3

−

−

1

μA

4

−

0.10

0.20

ms

−

Average value
Nch open-drain
output productOutput transistor Nch,
IOUT = 0.5 mA
Output transistor Nch,
IOUT = 0.5 mA
CMOS output
product
Output transistor Pch,
IOUT = −0.5 mA
Nch open-drain output productOutput transistor Nch, VOUT = 3.5 V−

2. Product with S pole or N pole detection
2. 1 S-5712ExSxx, S-5712ExNxx
Table 8(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item

SymbolPower supply voltage VDD
Current consumption IDD

Output voltage

VOUT

Leakage current

ILEAK

Operating cycletCYCLE

Average value
Nch open-drain
output productCondition

Min.

Typ.

Max.

Unit

−

1.60
−

1.85
640

3.50
1000

V
μA

Test
Circuit
−
1

−

−

0.4

V

2

−

−

0.4

V

2

VDD −
0.4

−

−

V

3

−

−

1

μA

4

−

0.05

0.10

ms

−

Output transistor Nch,
IOUT = 0.5 mA
Output transistor Nch,
IOUT = 0.5 mA
CMOS output
product
Output transistor Pch,
IOUT = −0.5 mA
Nch open-drain output productOutput transistor Nch, VOUT = 3.5 V−

7

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
 Magnetic Characteristics
1. Product with omnipolar detection
1. 1 Product with BOP = 3.0 mT typ.
Table 9(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3

S poleN poleS poleN poleS poleN poleSymbol
BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Condition−−−−
BHYSS = BOPS − BRPSBHYSN = |BOPN − BRPN|

Min.
1.4
−4.0
1.1
−3.7
−
−

Typ.
3.0
−3.0
2.2
−2.2
0.8
0.8

Max.
4.0
−1.4
3.7
−1.1
−
−

Unit
mT
mT
mT
mT
mT
mT

Test Circuit
5
5
5
5
5
5

1. 2 Product with BOP = 4.5 mT typ.
Table 10
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3

S poleN poleS poleN poleS poleN poleSymbol
BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Condition−−−−
BHYSS = BOPS − BRPSBHYSN = |BOPN − BRPN|

Min.
2.5
−6.0
2.0
−5.5
−
−

Typ.
4.5
−4.5
3.5
−3.5
1.0
1.0

Max.
6.0
−2.5
5.5
−2.0
−
−

Unit
mT
mT
mT
mT
mT
mT

Test Circuit
5
5
5
5
5
5

1. 3 Product with BOP = 7.0 mT typ.
Table 11
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
Release point*2
Hysteresis width*3

8

S poleN poleS poleN poleS poleN poleSymbol
BOPS
BOPN
BRPS
BRPN
BHYSS
BHYSN

Condition−−−−
BHYSS = BOPS − BRPSBHYSN = |BOPN − BRPN|

Min.
5.0
−8.5
3.7
−7.2
−
−

Typ.
7.0
−7.0
5.2
−5.2
1.8
1.8

Max.
8.5
−5.0
7.2
−3.7
−
−

Unit
mT
mT
mT
mT
mT
mT

Test Circuit
5
5
5
5
5
5

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
2. Product with S pole detection
2. 1 Product with BOP = 3.0 mT typ.
Table 12
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
S poleRelease point*2
S poleHysteresis width*3
S poleSymbol
BOPS
BRPS
BHYSS

Condition−−
BHYSS = BOPS − BRPS

Min.
1.4
1.1
−

Typ.
3.0
2.2
0.8

Max.
4.0
3.7
−

Unit
mT
mT
mT

Test Circuit
555

2. 2 Product with BOP = 4.5 mT typ.
Table 13
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
S pole*2
Release point
S poleHysteresis width*3
S poleSymbol
BOPS
BRPS
BHYSS

Condition−−
BHYSS = BOPS − BRPS

Min.
2.5
2.0
−

Typ.
4.5
3.5
1.0

Max.
6.0
5.5
−

Unit
mT
mT
mT

Test Circuit
555

2. 3 Product with BOP = 7.0 mT typ.
Table 14
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
S poleRelease point*2
S pole*3
Hysteresis width
S poleSymbol
BOPS
BRPS
BHYSS

Condition−−
BHYSS = BOPS − BRPS

Min.
5.0
3.7
−

Typ.
7.0
5.2
1.8

Max.
8.5
7.2
−

Unit
mT
mT
mT

Test Circuit
5
5
5

9

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
3. Product with N pole detection
3. 1 Product with BOP = 3.0 mT typ.
Table 15
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
N poleRelease point*2
N poleHysteresis width*3
N poleSymbol
BOPN
BRPN
BHYSN

Condition−−
BHYSN = |BOPN − BRPN|

Min.
−4.0
−3.7
−

Typ.
−3.0
−2.2
0.8

Max.
−1.4
−1.1
−

Unit
mT
mT
mT

Test Circuit
555

3. 2 Product with BOP = 4.5 mT typ.
Table 16
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
N poleRelease point*2
N poleHysteresis width*3
N poleSymbol
BOPN
BRPN
BHYSN

Condition−−
BHYSN = |BOPN − BRPN|

Min.
−6.0
−5.5
−

Typ.
−4.5
−3.5
1.0

Max.
−2.5
−2.0
−

Unit
mT
mT
mT

Test Circuit
55
5

3. 3 Product with BOP = 7.0 mT typ.
Table 17
(Ta = +25°C, VDD = 1.85 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
N poleRelease point*2
N pole*3
Hysteresis width
N poleSymbol
BOPN
BRPN
BHYSN

Condition−−
BHYSN = |BOPN − BRPN|

Min.
−8.5
−7.2
−

Typ.
−7.0
−5.2
1.8

Max.
−5.0
−3.7
−

Unit
mT
mT
mT

Test Circuit
55
5*1. BOPN, BOPS: Operation points
BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux
density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer).
Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status.
*2. BRPN, BRPS: Release points
BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux
density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away).
Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status.
*3. BHYSN, BHYSS: Hysteresis widths
BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively.
Remark10

The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
 Test Circuits
A*1R
100 kΩ
VDD
S-5712E
Series OUT
VSS*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 5 Test Circuit 1

VDD
S-5712E
Series OUT
VSS

A
V

Figure 6 Test Circuit 2

VDD
S-5712E
Series OUT
VSS

A
V

Figure 7 Test Circuit 3

11

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00

VDD
S-5712E
Series OUT
VSS

A
V

Figure 8 Test Circuit 4

R*1
100 kΩ
VDD
S-5712E
Series OUT
VSSV*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 9 Test Circuit 5

12

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
 Standard Circuit
R*1
100 kΩ
VDD
CIN
0.1 μF

S-5712E
Series OUT
VSS*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 10
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.

13

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
 Operation
1. Direction of applied magnetic flux
This IC detects the flux density which is vertical to the marking surface.
In the product with omnipolar detection, the output voltage (VOUT) is inverted when the S pole or N pole is moved closer
to the marking surface.
In the product with S pole detection, VOUT is inverted when the S pole is moved closer to the marking surface.
In the product with N pole detection, VOUT is inverted when the N pole is moved closer to the marking surface.
Figure 11 and Figure 12 show the direction in which magnetic flux is being applied.
1. 1 SOT-23-3

1. 2 SNT-4A

N
S

N
S
Marking surface

Marking surface

Figure 11

Figure 12

2. Position of Hall sensor
Figure 13 and Figure 14 show the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
2. 1 SOT-23-3

2. 2 SNT-4A
Top view

Top view
The center of Hall sensor;
in this φ 0.3 mm

1

2

1

The center of Hall sensor;
in this φ 0.3 mm
4

2

3

3

0.16 mm typ.
0.7 mm typ.

Figure 13

14

Figure 14

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
3. Basic operation
This IC changes the output voltage level (VOUT) according to the level of the magnetic flux density (N pole or S pole)applied by a magnet.
The following explains the operation when the output logic is active "L".
3. 1 Product with omnipolar detection
When the magnetic flux density vertical to the marking surface exceeds the operation point (BOPN or BOPS) after
the S pole or N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L".
When the S pole or N pole of a magnet is moved further away from the marking surface of this IC and themagnetic flux density is lower than the release point (BRPN or BRPS), VOUT changes from "L" to "H".
Figure 15 shows the relationship between the magnetic flux density and VOUT.
VOUT

BHYSN

BHYSS
H

L
N pole

BOPN

BRPN

BRPS

0

BOPS

S poleMagnetic flux density (B)Figure 15
3. 2 Product with S pole detection
When the magnetic flux density vertical to the marking surface exceeds BOPS after the S pole of a magnet is
moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the S pole of a magnet is
moved further away from the marking surface of this IC and the magnetic flux density is lower than BRPS, VOUT
changes from "L" to "H".
Figure 16 shows the relationship between the magnetic flux density and VOUT.
VOUT

BHYSS
H

L
N pole

0

BRPS

BOPS

S poleMagnetic flux density (B)Figure 1615

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00

3. 3

Product with N pole detection
When the magnetic flux density vertical to the marking surface exceeds BOPN after the N pole of a magnet is
moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the N pole of a magnet is
moved further away from the marking surface of this IC and the magnetic flux density is lower than BRPN, VOUT
changes from "L" to "H".
Figure 17 shows the relationship between the magnetic flux density and VOUT.
VOUT

BHYSN

H

L
N pole

BOPN

0

BRPN

S poleMagnetic flux density (B)Figure 17

16

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
4. Timing chart
Figure 18 shows the operation timing of this IC.

BOPS
BRPS
Magnetic flux density
applied to this IC
BRPN
BOPN

Current consumption (IDD)tCYCLE

Output voltage (VOUT)(Omnipolar detection,
active "L" product)

Output voltage (VOUT)(S pole detection,
active "L" product)

Output voltage (VOUT)(N pole detection,
active "L" product)

Output voltage (VOUT)(Both poles detection,
active "H" product)

Figure 18

17

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
 Precautions• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by the handlingduring or after mounting the IC on a board.
• ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.

18

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series
 Characteristics (Typical Data)
1. S-5712ExDxx
1. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta)1. 1. 1 S-5712ExDx1

1. 1. 2 S-5712ExDx3

VDD = 1.85 V
BOPS

4.0
2.0

BRPS
BRPN

0.0
−2.0
−4.0

BOPN

−6.0

−40 −25+25
Ta [°C]

0

+50

10.0
7.5
5.0
2.5
0.0
−2.5
−5.0
−7.5
−10.0

VDD = 1.85 V
BOPS

BOP, BRP [mT]

BOP, BRP [mT]

6.0

+75 +85

BRPS
BRPN
BOPN
−40 −250+25Ta [°C]+50+75 +85

1. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD)
1. 2. 1 S-5712ExDx1

1. 2. 2 S-5712ExDx3

Ta = +25°C
BOPS

4.0
2.0

BRPS
BRPN

0.0
−2.0
−4.0
−6.0

BOPN
1.5

2.0

2.5
VDD [V]

3.0

3.5

1. 3 Current consumption (IDD)vs. Temperature (Ta)
1200

800
600
VDD = 1.85 V

BRPN
BOPN
1.5

0
+25
Ta [°C]+50+75 +850VDD = 3.0 V−40 −250+25Ta [°C]Ta = +25°C
Ta = −40°C
1.5

tCYCLE [μs]

100
50

3.5

2.0

2.5
VDD [V]

3.5

3.0

1. 6 Operating cycle (tCYCLE)
vs. Power supply voltage (VDD)
200
Ta = +25°C
Ta = −40°C
150

VDD = 1.85 V

150

3.0

Ta = +85°C

400

0
0

2.5
VDD [V]

600
200−40 −25

2.0

800

200

1. 5 Operating cycle (tCYCLE)
vs. Temperature (Ta)200tCYCLE [μs]

BRPS

1000

VDD = 3.0 V

400

Ta = +25°C
BOPS

1. 4 Current consumption (IDD)vs. Power supply voltage (VDD)
1200

IDD [μA]

IDD [μA]

1000

10.0
7.5
5.0
2.5
0.0
−2.5
−5.0
−7.5
−10.0

BOP, BRP [mT]

BOP, BRP [mT]

6.0

+50

+75 +85

100
50

Ta = +85°C

0
1.5

2.0

2.5
VDD [V]

3.0

3.5

19

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
S-5712E Series
Rev.1.1_00
2. S-5712ExSxx
2. 1 Operation point, release point (BOP, BRP) vs. Temperature (Ta)2. 1. 1 S-5712ExSx2

2. 1. 2 S-5712ExSx3

VDD = 1.85 V

6.0

VDD = 1.85 V

10.0

4.0

BRPS
2.0
0.0

−40 −25+25
Ta [°C]

0

+50

BOPS

7.5

BOP, BRP [mT]

BOP, BRP [mT]

BOPS
5.0

BRPS

2.5
0.0

+75 +85−40 −250+25Ta [°C]+50+75 +85

2. 2 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD)
2. 2. 1 S-5712ExSx2

2. 2. 2 S-5712ExSx3

Ta = +25°C
BOPS

BOPS

4.0

BRPS
2.0

7.5
5.0

0.0
1.5

2.0

2.5
VDD [V]

3.0

600
VDD = 1.85 V

200
0

0

+25
Ta [°C]+50

Ta = +25°C

VDD = 1.85 V

50
VDD = 3.0 V
0+25
Ta [°C]Ta = −40°C
1.5

tCYCLE [μs]tCYCLE [μs]

400

2.0

2.5
VDD [V]

3.0

3.5

2. 6 Operating cycle (tCYCLE)
vs. Power supply voltage (VDD)
200

150

−40 −25

3.5

600

0

+75 +85

2. 5 Operating cycle (tCYCLE)
vs. Temperature (Ta)
200

100

3.0

Ta = +85°C

800

200
−40 −25

2.5
VDD [V]1000

VDD = 3.0 V

800
400

2.0

2. 4 Current consumption (IDD)vs. Power supply voltage (VDD)
1200

IDD [μA]

IDD [μA]

1000

1.5

3.5

2. 3 Current consumption (IDD)vs. Temperature (Ta)
1200

20

BRPS

2.5

0.0

0

Ta = +25°C

10.0
BOP, BRP [mT]

BOP, BRP [mT]

6.0

+50

+75 +85

150
Ta = −40°C

100

Ta = +25°C

50
Ta = +85°C

0
1.5

2.0

2.5
VDD [V]

3.0

3.5

HIGH-SPEED LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC
Rev.1.1_00
S-5712E Series Power Dissipation
SOT-23-3

SNT-4A
Tj = +125°C max.

0.8
B
0.6
A

0.4
0.2
0.0

0

25

50

75

100

125

150

175

Tj = +125°C max.

1.0

Power dissipation (PD) [W]Power dissipation (PD) [W]

1.0

0.8
0.6
B

0.4

A
0.2
0.0

0

25

Ambient temperature (Ta) [°C]
BoardPower Dissipation (PD)

A
B
C
D
E

0.50 W
0.61 W
−
−
−

50

75

100

125

150

175

Ambient temperature (Ta) [°C]
Board
A
B
C
D
E

Power Dissipation (PD)0.33 W
0.41 W−−−

21

SOT-23-3/3S/5/6 Test Board
IC Mount Area

(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. SOT23x-A-Board-SD-2.0

ABLIC Inc.

SNT-4A Test Board
IC Mount Area

(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. SNT4A-A-Board-SD-1.0

ABLIC Inc.

2.9±0.2
1

2

3

+0.1

0.16 -0.06

0.95±0.1
1.9±0.2

0.4±0.1

No. MP003-C-P-SD-1.1

TITLE

SOT233-C-PKG Dimensions

No.

MP003-C-P-SD-1.1

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.1+0.25

ø1.0 -00.23±0.1
4.0±0.1

1.4±0.2

3.2±0.2

1

2

3

Feed direction

No. MP003-C-C-SD-2.0

TITLE

SOT233-C-Carrier Tape

No.

MP003-C-C-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

12.5max.

9.2±0.5

Enlarged drawing in the central part
ø13±0.2

No. MP003-Z-R-SD-1.0

TITLE

SOT233-C-Reel

No.

MP003-Z-R-SD-1.0

ANGLE

QTY.

UNIT

mm

ABLIC Inc.

3,000

1.2±0.04
3

4

+0.05
0.08 -0.02

2

1

0.65
0.48±0.02

0.2±0.05

No. PF004-A-P-SD-6.0

TITLE

SNT-4A-A-PKG Dimensions

No.

PF004-A-P-SD-6.0

ANGLE
UNIT

mm

ABLIC Inc.

+0.1

ø1.5 -0

4.0±0.1

2.0±0.05

0.25±0.05+0.1

1.45±0.1

2

1

3

4

ø0.5 -0

4.0±0.1

0.65±0.05

Feed direction

No. PF004-A-C-SD-2.0

TITLE

SNT-4A-A-Carrier TapeNo.

PF004-A-C-SD-2.0

ANGLE
UNIT

mm

ABLIC Inc.

12.5max.

9.0±0.3

Enlarged drawing in the central part
ø13±0.2

(60°)

(60°)

No. PF004-A-R-SD-1.0

TITLE

SNT-4A-A-Reel

No.

PF004-A-R-SD-1.0
QTY.

ANGLE
UNIT

mm

ABLIC Inc.

5,000

0.52

1.16

2

0.52

0.35

1.
2.

0.3

1

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)
0.03 mm

1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.

(0.25 mm min. / 0.30 mm typ.)(1.10 mm ~ 1.20 mm)

No. PF004-A-L-SD-4.1

TITLE

SNT-4A-A-Land Recommendation

No.

PF004-A-L-SD-4.1

ANGLE
UNIT

mm

ABLIC Inc.

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information describedherein.

4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due tothe use of the products outside their specified ranges.

5.

Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.

6.

When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-relatedlaws, and follow the required procedures.

7.

The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,biological or chemical weapons or missiles, or use any other military purposes.

8.

The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.

9.

In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products areallowed to apply for the system on customer's own responsibility.

10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of thisdocument described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07

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