DW01-P
One Cell Lithium-ion/Polymer Battery Protection IC

General Description

Ordering Information

The DW01-P battery protection IC is designed toprotect lithium-ion/polymer battery from damage ordegrading the lifetime due to overcharge,
overdischarge, and/or overcurrent for one-cell
lithium-ion/polymer battery powered systems, such as
cellular phones.

DW01-P
PACKAGE TYPE
SOT-23-6 (Pb-free)
TEMPERATURE RANGE-40°C~+85°C

The ultra-small package and less required external
components make it ideal to integrate the DW01-P into
the limited space of battery pack. The accurate ±50mV
overcharging detection voltage ensures safe and fullutilization charging. The very low standby current
drains little current from the cell while in storage.

OVERCHARGE PROTECTION
4.25V± 50mV

Featuresz

Applications

Reduction in Board Size due to Miniature
Package SOT-23-6.

z

Ultra-Low Quiescent Current at 3μA(Vcc=3.9V).

z

Ultra-Low Power-Down Current at 0.1μA(Vcc=2.0V).

z

Precision Overcharge Protection Voltage
4.25V ± 50mVz

Load Detection Function during Overcharge
Mode.

z

Two Detection Levels for Overcurrent
Protection.

zDelay times are generated by internal circuits.
No external capacitors required.

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

z1/11

Protection IC for One-Cell Lithium-Ion /Lithium-Polymer Battery Pack

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
Product Name List

SOT-23-6

Overcharge
detection
voltage[VOCP] (V)Overcharge
releasevoltage[VOCR] (V)

DW01-P

4.250±0.050

4.050±0.050

Package
Model

DW01-P

Overdischarge Overdischarge
detection
releasevoltagevoltage[VODP] (V)[VODR] (V)
2.40±0.100

Overcurrent
detection
voltage[VOI1] (mV)

3.0±0.100

150±30Pin Configuration
6Pin No. Symbol

4Description

1OD

MOSFET gate connection pin for discharge control

2CS

Input pin for current sense, charger detect

3

OC

MOSFET gate connection pin for charge control

4TD

Test pin for reduce delay time

5VCC

Power supply, through a resistor (R1)6

GND

Ground pin

Fortune Semiconductor Corp.

http://www.fsc.com.tw

5

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

2/11

SOT-23-6
TOP VIEW123

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-PTD

Functional Block Diagram

VCC

Short circuit
Detector

VSSVSS

Oscillator
ControlCircuit

Overcharge
Detector

Over current
Detector

VSSDivider
Control
Logic

Overdischarge Detector

CSCharger
Detector

GND

VSS

Control
Logic

OCOD

GND

Typical Application Circuit

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

3/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
Absolute Maximum Ratings(GND=0V, Ta=25°C unless otherwise specified)
ItemSymbolRatingUnit

Input voltage between VCC and GND *VCC

GND-0.3 to GND+10

V

OC output pin voltage

VOC

VCC -24 to VCC +0.3

VOD output pin voltage

VOD

GND-0.3 to VCC +0.3

VCS input pin voltage

VCS

VCC -24 to VCC +0.3

V

Operating Temperature RangeTOP-40 to +85°C

Storage Temperature Range

TST-40 to +125°C

Note: DW01-P contains a circuit that will protect it from static discharge; but please take special care that noexcessive static electricity or voltage which exceeds the limit of the protection circuit will be applied to it.

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

4/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
Electrical Characteristics(Ta=25°C unless otherwise specified)

PARAMETERTEST CONDITIONS SYMBOLMin

TypMax

UNIT

3.0

6.0

μA

0.1

μA

Supply Current

VCC=3.9V

ICC

Power-Down Current

VCC=2.0V

IPD

Overcharge Protection Voltage

DW01-P

VOCP

4.20

4.25

4.30

VOvercharge Release Voltage

VOCR

4.00

4.05

4.10

V

Overdischarge Protection Voltage

VODP

2.30

2.40

2.50

V

Overdischarge Release Voltage

VODR

2.90

3.00

3.10

V

Overcurrent Protection Voltage

VOIP（VOI1）

120

150180mV

VSIP（VOI2）

1.00

1.35

1.70

V

TOC

80200ms

Short Current Protection Voltage

VCC=3.6V

Overcharge Delay Time
Overdischarge Delay Time

VCC=3.6V to 2.0V

TOD

40100ms

Overcurrent Delay Time (1)VCC=3.6V

TOI1

1020msOvercurrent Delay Time (2)VCC=3.6V

TOI2500μs-0.2VCharger Detection Threshold Voltage

VCHA

OD Pin Output “H” Voltage

VDH

OD Pin Output “L” Voltage

VDL

OC Pin Output “H” Voltage

VCH

OC Pin Output “L” Voltage

VCLFortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

5/11-1.2-0.7

VCC-0.1 VCC-0.02
0. 1

V
0.5

VCC-0.1 VCC-0.02
0.1

VV

0.5

DW01-P-DS-10_EN

V

Rev. 1.0
Sep, 2006

DW01-P
Description of Operation1.

Overcharge Protection
When the voltage of the battery cell exceeds the overcharge protection voltage (VOCP) beyond theovercharge delay time (TOC) period, charging is inhibited by turning off of the charge control MOSFET.
The overcharge condition is released in two cases:
1) The voltage of the battery cell becomes lower than the overcharge release voltage (VOCR) throughself-discharge.
2) The voltage of the battery cell falls below the overcharge protection voltage (VOCP) and a load isconnected.
When the battery voltage is above VOCP, the overcharge condition will not release even a load isconnected to the pack.

2.

Overdischarge Protection
When the voltage of the battery cell goes below the overdischarge protection voltage (VODP) beyond
the overdischarge delay time (TOD) period, discharging is inhibited by turning off the discharge control
MOSFET. The default of overdischarge delay time is 10ms. Inhibition of discharging is immediately
released when the voltage of the battery cell becomes higher than overdischarge release voltage(VODR) through charging.

3.

Overcurrent Protection
In normal mode, the DW01-P continuously monitors the discharge current by sensing the voltage of
CS pin. If the voltage of CS pin exceeds the overcurrent protection voltage (VOIP) beyond theovercurrent delay time (TOI1) period, the overcurrent protection circuit operates and discharging is
inhibited by turning off the discharge control MOSFET. The overcurrent condition returns to the normal
mode when the load is released or the impedance between BATT+ and BATT- is larger than 500kΩ.
The DW01-P provides two overcurrent detection levels (0.15V and 1.35V) with two overcurrent delaytime (TOI1 and TOI2) corresponding to each overcurrent detection level.

4.

Charge Detection after Overdischarge
When overdischarge occurs, the discharge control MOSFET turns off and discharging is inhibited.
However, charging is still permitted through the parasitic diode of MOSFET. Once the charger isconnected to the battery pack, the DW01-P immediately turns on all the timing generation anddetection circuitry. Charging progress is sensed if the voltage between CS and GND is below charge
detection threshold voltage (VCH).

5.

Power-Down after Overdischarge
When overdischarge occurs, the DW01-P will enter into power-down mode, turning off all the timing
generation and detection circuitry to reduce the quiescent current to 0.1μA (VCC=2.0V). At the sametime, the CS pin is pull-up to VCC through an internal resistor.

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

6/11

DW01-P-DS-10_EN

Rev. 1.0Sep, 2006

DW01-P
Design Guide
1.

Selection of External Control MOSFET
Because the overcurrent protection voltage is preset, the threshold current for overcurrent detection isdetermined by the turn-on resistance of the charge and discharge control MOSFETs. The turn-on
resistance of the external control MOSFETs can be determined by the equation: RON=VOIP/ (2 x IT) (ITis the overcurrent threshold current). For example, if the overcurrent threshold current IT is designed tobe 3A, the turn-on resistance of the external control MOSFET must be 25mΩ. Be aware that turn-on
resistance of the MOSFET changes with temperature variation due to heat dissipation. It changes withthe voltage between gate and source as well. (Turn-on resistance of MOSFET increases as thevoltage between gate and source decreases). As the turn-on resistance of the external MOSFET
changes, the design of the overcurrent threshold current changes accordingly.

2.

Suppressing the Ripple and Disturbance from Charger
To suppress the ripple and disturbance from charger, connecting R1 and C1 to VCC is recommended.

3.

Protection the CS pin
R2 is used for latch-up protection when charger is connected under overdischarge condition andoverstress protection at reverse connecting of a charger.

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

7/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006DW01-P
Timing Diagram
1.

Overcharge Condition ÆLoad Discharging Æ Normal Condition

Charger
Load

Battery Voltage

VOCP
VOCR
VODR
VODP

OC PinVCCCSOD PinVCC

GND

CS Pin

VCC

VOI1
GND
VCHTOC

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

TOC

8/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
2.

Overdischarge Condition Æ Charging by a Charger ÆNormal Condition

Charger
Load

Battery Voltage

VOCP
VOCR
VODR
VODP

OC PinVCCCSOD PinVCCCS Pin

GND

VCC
VOI2
GND
VCHTOD

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

TOD

9/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
3.

Over Current Condition Æ Normal Condition

Charger
Load

Battery Voltage

VOCP
VOCR
VODR
VODP

OC PinVCCCSOD PinVCCCS Pin

GND

VCC
VOI2
VOI1
GND
TOI1

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

TOI2

10/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006

DW01-P
Package Outline
Dimension (Package A)
D
e1E1E

ce

SYMBOL

MIN.

TYP.

MAX.

A
A1

1.05
0.05

-

1.35
0.15

A2b1.00
0.40

1.10
-

1.20
0.55

b2c0.25
0.08

-

0.40
0.20

DE

2.70
2.60

2.90
2.80

3.00
3.00

E1L

1.50
0.35

1.60
0.45

1.70
0.55

L1e

b2

0.60 REF.
0.95 BSC.

e1A2

θ1θ
θ1
θ20

1.90 BSC.
510

365
8

710

SYMBOL

MIN.

TYP.

MAX.

A
A1A2bc
D
E

1.050
0.000
1.050
0.300
0.100
2.820
1.500

-

1.250
0.100
1.150
0.400
0.200
3.020
1.700

E1ee1
LL12.650

GAUGE PLANE

A1A

Unit : mm

DETAIL Abθ

Lθ2SEATING PLANE

L1DETAIL A

Dimension (Package B)
De1

Unit : mm

DETAIL A

EE1bceA2GAUGE PLANE

A1A

θ

θ

L1

2.950
0.950 TYP
1.800
2.000
0.700REF
0.300
0.600
080.2
SEATING PLANE

L
DETAIL A

Fortune Semiconductor Corp.

http://www.fsc.com.tw

TEL : +886-2-2809-4742
FAX: +886-2-2809-4874

11/11

DW01-P-DS-10_EN

Rev. 1.0
Sep, 2006