FASTPULSE TECHNOLOGY, INC.

LASERMETRICSSERIES 5046ER E-O SYSTEMS®

Division
220 Midland Avenue C Saddle Brook, NJ 07663
Tel: (973)478-5757 C Fax: (973)478-6115
WebSite C www.lasermetrics.com

FOR LASER PULSEEXTRACTION, GATING & CHOPPING

5 0 4 6 E R S y s t e m s f ill t h e n e e d f o r h ig h ly re lia b le ,completely solid state instruments that combine electrooptic light m odulators w ith high speed, high voltages w itc h in g d riv ers capable of p ro d u c in g q u arte r a n dhalfwave retardation voltages over an optical spectrumof 300 nm to more than 2000 nm by selecting the mostappropriate Pockels cell.
W ith rise an d fa ll tim e s a s fa st a s 3 n a n o se c o n d s,
5 0 4 6 E R S y s t e m s a r e e x c e p t io n a lly u s e fu l fo r
regenerative amplifier switch in-out, laser pulse slicing,m o d e lo c k e d p u ls e g a tin g , c a v ity d u m p in g a n d Q sw itchin g . T h e sys tem s a re v a lu a b le fo r b o th
intracavity and extracavity applications and offer thelatest technology in reliable, lowest radiated noise, solidstate, high voltage switching design.
5046ER System s can be configu red for a variety ofapplications. An extensive selection of com ponents
a n d o pe ra tin g p a ra m e t e r s is a v a ila b le . T h e P o w e r
Supply/Timing (PS/TG) is a standard 19"wide X 4.75"
high (3U size) rack mountable configuration. The
Optical Head Assembly (OHA) options are shown on
the next page.
Optical switching is accom plished by Series 1040,1145 and Q1059P KD*P (DKDP); Series 1147 (RTP)and Series 1150 BBO Pockels cells which rotate theincoming plane of polarization of the laser beam . Thecells are designed to match the optical wavelength andthe electrical characteristics of the 5046E High Voltage
MOSFET Switching Driver Modules.
Series 1040 KD*P Pockels cells are available withapertures or 10, 16 and 20 mm and with single or
double crystal configurations.
The Q1059P Series Pockels cells are available with 10and 12 mm clear apertures.
Series 1145 KD*P cells are miniature devices (19 mmDiameter X 25 mm Long) with 8 mm clear apertures.
Series 1147 Pockels cells utilize RTP (Rubidium Titanyl
P h o sp h a t e ), n o te d fo r its a b ility to p ro d u c e o p tic a lswitching w ithout superim posing photoelastic ringing
o n the transm itte d b e a m . RT P m o d u la to rs u se t w ocrystals, a configuration that provides excellent thermalcompensation and stability with low operating voltages.
Series 1150 BBO Pockels cells utilizing Beta Barium
Borate ( $BaB 2O 4) are currently available in aperturesizes of 3, 4 and 6 mm diameters. BBO is noted for itsvery low piezoelectric response, ability to tolerate highaverage power and operate in the UV spectrum.

RoHS5046ER Systems incorporate a shielded “OHA”(Optical Head Assembly) enclosure for EMI/RFI
suppression and a separate Power Supply-Tim ing
Generator cabinet. The systems are RoHS Compliant.

High average and peak pow er operation with thestandard KD*P devices in the range of 500 to 1100 nm
is enhanced by the use of Sol Gel antireflection
coatings on the crystal surfaces. Damage thresholds inthe range of 10 to 20 GW /cm 2 with laser pulse widthsof less than 10 ps and up to10 GW /cm 2 with pulse
widths < 1 ns are feasible.
The 5046ER System's High Voltage M OSFET Sw itch
M o d u le s a r e c o n fig u re d fo r o p e ra tio n a t v o lta g e s
suitable for half w ave operation of KD*P longitudinal
field m o d u lato rs in the 1000 nm range ( .7 k V ). B ysimply adjusting the front panel HV control, the driverc a n o p e ra te a t th e q u a rte r w a v e v o lta g e (o r le s s )without loss of efficiency or increased rise or fall times.
Operation in the half wave mode may obviate the usual
requirem en t for a q u arter o r ha lf w av e p late in theo p tical train in m a ny regenerative am p lifie r
configurations.
Maximum system repetition rate is determined by thePockels cell capacitance and high voltage setting. Fora Model Q1059P Pockels cell (5 pf) and nominal 7 kV
operating voltage, the repetition rate is limited to about
5 kH z. At 4 kV maximum voltage, the repetition rateincreases to about 7.5 kHz maximum. For RTP Pockels
c e lls, (C = 5 p f) m a xim u m re p e tition ra te isa p p ro x im a te ly 7 .5 k H z , a b e n e fit o f R T P ’s lo w e r
operating voltag es. BB O M odel 1150-6 mm devices
can operate at ½ wave retardation at 800 nm.

CONTINUED - OVERSERIES 5046ER SYSTEMS
5046ER Systems are self-contained. The Optical Head Assembly and HV Power Supply/Timing Generator
are packaged in EMI shielded enclosures. Unshielded, open configurations for OEM and end user packaging
are also available. A typical shielded system consists of the following elements:
5046ER Rack Mountable HV Power Supply/Timing Generator (PS/TG) & Cable Set
5046E OR 5046EM Optical Head Assembly containing: Baseplate and Cover, Gimbals
5046 High Voltage Switching Modules (located in the OHA)
Q1059P Series KD*P Pockels cell, with AR coatings. RTP & BBO devices are available
Optional Mounted Glan-Air polarizers and thin film polarizers are available
Contact our Engineering Sales Group for alternatives and options to match your application
NOMINAL SPECIFICATIONS
Useful Optical W avelength Range*:
Optical Rise and Fall Times (10 to 90% ):Optical Pulse W idth Range, FW HM
Repetition Rate, single shot to:
Jitter, System Input to Output:
Input-Output Delay Time, adjustable:
Input-Output Delay Time: directly into
HV Output Module:
Trigger Input Impedance:
Trigger Input Pulse:
CW Trigger Input: (for extraction of
CW /ML pulses)
Trigger/Photo Input: (for extraction of
Q-SW /ML pulses)
Dimensions:
Optical Head Assembly, Standard Size:
Miniature Size:
Power Supply/Timing Generator Cabinet
Power Requirements:

300 to 2200 nm (depends on Pockels cell crystal).4 ns (with Q1059P or 1147) Pockels cells)< 5 ns to .1 :s5 kHz< 1 ns
50 ns to .1 :s.50 ns
50 ohms+ 2 to 10 volts, 1 ns to 1 :s width+ /- 100 mV to 3 volts, #1 ns to 1 :s width
5046E: 4H X 4.5W X 9.5L, inches
5046EM: 4H X 4.5W X 8.25L inches
5046ER - Rack Mount: 4.75H X 19W X 17.1L, (3U)
100/115/230 VAC, 50/60 Hz, 30 watts* Wavelength range is dependent on choice of electro-optic modulator and crystal material. For instance, for operation at
1064 nm with <20 watts average power and peak power densities of more than 500 MW/cm2, the Series 1147 RTP
modulators would be likely candidates.

REV. 25 Feb 2008 / RLG
5046ER -logo-dat.wpd
Specifications may change to incorporate latest modifications or improvements