MCT6, MCT61, MCT62, MCT66
MCT6X, MCT61X, MCT62X, MCT66X

HIGH DENSITY
PHOTOTRANSISTOR OPTICALLYCOUPLED ISOLATORSAPPROVALSz
UL recognised, File No. E91231

Dimensions in mm

2.54

Package Code " FF "7.0
6.0

'X' SPECIFICATIONAPPROVALSz

VDE 0884 in 3 available lead form :- STD- G form- SMD approved to CECC 00802

DESCRIPTION
The MCT6, MCT61, MCT62 & MCT66 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon phototransistors in space efficient dual in line plastic
packages mounted two channels per unit.
FEATURESz
Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
z
High Isolation Voltage (5.3kVRMS )APPLICATIONS
Computer terminalszIndustrial systems controllerszMeasuring instrumentsz
Signal transmission between systems ofdifferent potentials and impedances

182
376
5

4

1.2
10.16
9.16

7.62
4.0
3.0
13°
Max

0.5
3.0
0.5

3.35

0.26

ABSOLUTEMAXIMUMRATINGS(25°C unless otherwise specified)
Storage Temperature-40°C to + 125°C
Operating Temperature-25°C to + 100°C
Lead Soldering Temperature(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation

50mA
6V
70mW

OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation

30V
6V
50mA
150mW

z

OPTION SM

OPTION G

SURFACE MOUNT

7.62

POWER DISSIPATION
Total Power Dissipation
170mW(derate linearly 2.67mW/°C above 25°C)

0.60.1
10.46
9.86

1.25
0.75

0.2610.16

ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08

DB92012

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )PARAMETER
Input

OutputCoupledMIN TYP MAX UNITS

Forward Voltage (VF)

1.5V

IF = 20mA

Reverse Current (IR)10μA

VR = 3V

100VVnA

IC = 1mA (note 2)
IE = 100μA
VCE = 10V%%%%10mA IF , 10V VCE
5mA IF , 5V VCE
5mA IF , 5V VCE
10mA IF , 10V VCEVVVRMS

16mA IF , 2mA IC
40mA IF , 2mA IC
See note 1

ΩVIO = 500V (note 1)μsμs

IC = 2mA, VCE = 2V,RL = 100Ω (Fig. 1)

Collector-emitter Breakdown (BVCEO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
MCT6
MCT61
MCT62
MCT66
Collector-emitter SaturationVoltageVCESAT
MCT6,61,62
MCT66
Input to Output Isolation Voltage VISO

3062050100
60.40.45300

Input-output Isolation Resistance RISO 5x1010
Output Rise Time, tr
Output Fall Time, tf
Note 1
Note 2TEST CONDITION

43

Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.

FIG. 1

INPUT
toff

tontr

tf

OUTPUT

17/7/08

10%10%90%90%

DB92012m-AAS/A4

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage
TA = 25°C50
Collector current IC (mA)

Collector power dissipation PC (mW)

20015010050405030302015201010IF = 5mA00-300255075

1000125246810

Collector-emitter voltage VCE ( V )Ambient temperature TA ( °C )Forward Current vs. Ambient Temperature

Relative Current Transfer Ratio
vs. Forward Current

60
Relative current transfer ratio

Forward current IF (mA)

5040
30
20101.4
1.2
1.0
0.8
0.6
0.4
0.2

000255075

100125251020

Ambient temperature TA ( °C )Forward current IF (mA)

Relative Current Transfer Ratio
vs. Ambient Temperature

Collector-emitter Saturation
Voltage vs. Ambient Temperature

1.5IF = 10mA
VCE = 10V

1.00.50-30

10255075

Ambient temperature TA ( °C )100

Collector-emitter saturation voltage VCE(SAT) (V)

Relative current transfer ratio-30

17/7/08

VCE = 10V
TA = 25°C

50

0.28
0.24

IF = 16mA
IC = 2mA

0.20
0.16
0.12
0.08
0.04
0-30

0255075

100

Ambient temperature TA ( °C )DB92012m-AAS/A4