MITSUBISHI ELECTRIC CORPORATIONPUBLIC RELATIONS DIVISION
7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 100-8310 JapanFOR IMMEDIATE RELEASE

No. 3046

Customer Inquiries

Media Inquiries

Semiconductor & Device Marketing Div.B
Mitsubishi Electric Corporation

Public Relations Division
Mitsubishi Electric Corporation
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

www.MitsubishiElectric.com/semiconductors/

Mitsubishi Electric to Release Sample 220W-output power GaN-HEMT
for 2.6GHz-band 4G Mobile Communication Base Transceiver Stations
For BTS small size and low power consumption by high performanceTOKYO, August 31, 2016 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it hasdeveloped a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering
world-leading* efficiency for 2.6GHz-band Base Transceiver Stations (BTS) of fourth-generation (4G)
mobile communication systems. Samples will be released starting November 1.
*According to Mitsubishi Electric as of August 31, 2016

New GaN-HEMT for 2.6GHz 4G BTS (MGFS53G27ET1)

High-speed 4G mobile communication systems including Long Term Evolution (LTE) and LTE-Advanced
incorporate are being equipped with progressively smaller BTS for macro-cells to increase data capacity andto reduce power consumption. Mitsubishi Electric’s highly efficient new GaN-HEMT for 2.6GHz-band
macro-cell BTS is expected to help realize even smaller and lower-power BTS.

Product Features
1)

World-leading efficiency and transistor optimization- High drain efficiency** of 74%- High efficiency results in simpler cooling system, which reduces BTS size and power consumption

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2)

Size reduction- Flangeless ceramic package reduces size of device itself and related power amplifier modules3)

Expanded GaN-HEMT lineup- Added flangeless ceramic package for 220W models for 2.6GHz-band macro-cell BTS**

Load pull measurement

Main Specifications

ModelFrequency[GHz]

MGFS53G27ET1

2.5 to 2.7

Use

Macro-cell
BTS

RF performances
Saturated output
LinearDrain
powergain
efficiency**
[%]
[dB]
[dBm]
[W]
53.4

220

1874

MGFS53G38ET1

52.6

180

1770

MGFS50G38FT150.0

100

1774

MGFS50G38ET1

49.5

90

1774

MGFS39G38L239.592067

MGFS38G38L238.4

72067

MGFS37G38L2

37.0520673.4 to 3.8
Small-cellBTS***OperatingVoltage
Vd*** [V]5050

Drain voltage

Going forward, the lineup will be further with products for different outputs and frequencies, as well asadapted for mobile communication systems beyond 4G.

Environmental AwarenessThis product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical andElectronic Equipment (RoHS) directive 2011/65/EU.
###About Mitsubishi Electric Corporation
With over 90 years of experience in providing reliable, high-quality products, Mitsubishi ElectricCorporation (TOKYO: 6503) is a recognized world leader in the manufacture, marketing and sales ofelectrical and electronic equipment used in information processing and communications, space development
and satellite communications, consumer electronics, industrial technology, energy, transportation andbuilding equipment. Embracing the spirit of its corporate statement, Changes for the Better, and its
environmental statement, Eco Changes, Mitsubishi Electric endeavors to be a global, leading green company,enriching society with technology. The company recorded consolidated group sales of 4,394.3 billion yen(US$ 38.8 billion*) in the fiscal year ended March 31, 2016. For more information visit:
www.MitsubishiElectric.com*At an exchange rate of 113 yen to the US dollar, the rate given by the Tokyo Foreign Exchange Market on
March 31, 2016
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