Silicon-on-Insulator (SOI) Pixel Detector
K. Hara••••••

SOI pixel devices - introduction
Tsukuba HEP group involvement in SOIPIX group
FPIX /SOFIST / INTPIX
Radiation hardness
3D stacking
Summary

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018

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SOI pixel devices
SOI: SILICON-ON-INSULATORCMOS circuitry fabricated on
buried oxide(BOX)LAPIS 0.2um FD-SOIFeatures:• monolithic(no metal bumps)• SOI-CMOS (FETs fully isolated)• Can choose* substrate of optimum
resistivity (fully depleted CMOSsensors possible)*SOITEC SmartCutTM

many excellent features•••

Material budget
S/Npower dissipation•••

speedcostPixel size•••

single event effects
latch up
Operation temp. (0.3K～570K)

TID tolerance improved to 1MGy by introducing double SOI wafer
Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,20182Tsukuba HEP for SOIPIX
2005: SOIPIX group formed (leader Y. Arai) at establishment of KEK Detector Technology ProjectHEP, Tsukuba (K. Hara) joined from the beginning

TrTEG(Honda)

INTPIX3(Arai)TrTEG(Abe/Iwanami)thinned (100/50um): 1st fully depleted pixel<Double SOI>

INTh2(Miyoshi)

FPIX2(Honda)
FPIX3(Aoyagi)

2017

significant degradation at a few kGy

INTPIX1,2(Arai)FPIX4(Hara)~100 kGy~200 kGy

world-best spatial resolution
0.65um achieved (2017)~1 MGyILC pixel

2012

pixel evaluation
precision pixel

Rad-hard pixel

FET evaluation
2007
TrTEG(Ikegami)

SOFIST1(Ono)

SOFIST2(Ono/Yamada)
INTPIX4(Arai)for telescope at FNAL

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018

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FPIX
Fine Pixel Detector

PIXEL Size 9x9um (same as FPIX3)
FPIX4 layout
8x8 um : minimum achieved in FPIX2
256x256 pixels
16 parallel outputs
Sub-board⇒SEABAS

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018• VLSI design（LAPIS MPW run)
• Sub-board design• SEABAS readout

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FPIX2- Testbeam (2017 Jan)
scint.

120GeV
proton

1X

2X

3X

4X

Measured residual

0.953 ± 0.009

0.791± 0.008

0.822± 0.008

3.80 ± 0.05

Intrinsic resolution

0.711

0.6480.703

0.75

1Y

2Y

3Y

4Y

Measured residual

0.833 ± 0.008

0.683± 0.006

0.824± 0.008

3.79 ± 0.05

Intrinsic resolution

0.622

0.6000704

0.75

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018

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FPIX2 –World best Spatial
Resolution

SOFIST v1 (20um)

Press release (June 23, 2017)

FPIX2 (8um)• First result demonstrating semi-conductor
device can achieve sub-micron resolution• Sub-micron neutron detector may be possible?
• SOFIST (500um thick) vs ILC requirements(50um thick, <3um resolution)
Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018

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Precision neutron detector• Sub-micron neutron detector may be possible?

10BSOI pixel• detect α or 7Li (~2um flight before absorbed)• Flight direction information is useful for
determining better n position
 Quantum states of UCNs trapped in gravity
z [um]

 Fission track images (JAEA for “nuclear forensics”)

platics+etching+microscope -> SOIPIX
Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,20187Testbeam (2018 Feb/Mar)SOFISTv2 for timing study
thinned to 75 um

Timestamp correlation

Chip-B [us]

SOFIST: SOI Fine measurement of Space and Time

Chip-A [us]12-b ADC
Prelim.
ramp

σT~4.5us

timestamp

ch calibration
noise

Test-inBeam gate (500us)

Tohoku U.
T. Li (JPS)ILC beam structure

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018

ΔT=TA-TB
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Testbeam (2018 Feb/Mar)

Beam telescope
4 INTPIX4 sensors
Pixel size : 17x17um
Sensitive area (8.7x14.1mm)

64x51264x51264x51213 parallel readout512x832 pixels-> 300 fps
faster by RoI selection

First testbeam data for tracking withlarge area fine pitch SOI pixel sensors
may become competitive with EUDET(Mimosa 18.4um pitch, 576x1152 pix)Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,20189

Radiation-hardness● FPIX2 (100kGy) Testbeam results: OK for ILC

SEE immunity for thin active area~O(10)um

40nm
TID (total ionization dose) effectVSOI2● FPIX3 (1MGy): as good as other CMOS devices• introduce 2nd electrode (DSOI: 2011)• optimize LDD for rad-hardness (2016)
Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,2018103D: more functionality● Innovative detectors in TIA

SOI is 3D by itself, stacking further for more functionality
Au-cone micro-bump

0.2um SOI process is not at leading edge as VLSI process …
• Latest VLSI technology adaptable -> detectors at collider experiments, and others• Other material (e.g. CdTe) stackable -> X-ray detectors• Stacking multiple sensor layers -> Compton camera, 4D detector
TIA-Kakehashi:「3次元構造半導体量子イメージセンサーの調査研究」KEK (Kurachi)-AIST(Kikuchi)-U Tsukuba(hara)-U Tokyo(Ikeda)
Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,201811

3D stacking: SOFIST v4Lower pixel

Upper pixel

charge memories

timestamp memories

Cone-Bump
pad(5x5um)

20um

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,201812

Summary

SOI pixel technology has advanced significantly after 5-year Kakenhi research
numerical goals set by KEK DTP PL (Prof. J. Haba):• 1um spatial resolution: achieved by FPIX2 (0.65um)• 1us time resolution ⇔ SOFIST2 (4.5us prelim.→3us probably)• 1e- energy resolution ⇔ XRPIX (10e-)• 1MGy radiation hardness: achieved by FPIX3(1MGy)

SOI pixels at work
• FPIX4 as a larger precision device• TrTEG for rad-hardness evaluation: gamma+proton damage evaluation

SOI pixels in collaboration• INTPIX4 (INTPIX8) as a large tracking system• SOFISTv3, v4 → ILC pixel• 3D high functionality pixels

Inaugural Symposium of the Tomonaga Center for the History of the Universe Mar. 26-27,201813