HVICHVIC

Innovative Power Devices
for a Sustainable Future
Mitsubishi Electric HVICs contribute to the high reliability of various power supply equipment
by equipping them with various the protection functions.
High-voltage integrated circuits (HVICs) are capable of directly driving the gates of power MOSFETs and IGBTs using
signals input from microcomputers, thereby replacing power MOSFET and IGBT gate drivers that use pulse
transformers and photocouplers. They are insulated by a level shift circuit inside the semiconductor chip. Since avariety of protection functions, such as power supply undervoltage, interlocking, input signal filter, and error output, arebuilt into the IC, reliability of the power supply equipment is enhanced.
Mitsubishi Electric has many half-bridge products that are commonly used in drive circuits. Our HVIC products comply
with the European Union’s Restriction of Hazardous Substances Directive for electrical equipment, 2011/65/EU and2015/863/EU.

Main Features

High voltage floating circuit is built-in because it is a high side gate drive.
Built-in signal transmission (level shift) function for transmitting signalsto the floating circuit
High side gate driver section has a high voltage isolation structure.
Level shift section has a high voltage NMOS structure.
AC servo/DC brushless motors

Air conditioners/
Washing machines

General-purpose inverters

HVICs
Induction heatingcooking stoves

1Voltagetranslator

Fluorescent lights/
HID lighting//LED lighting

1200V HVIC with Desaturation Detection for Power Semiconductors M81748FP
M81748FP achieves the high durability of 1200V
that is suitable for AC400V inverter systems.
●High durable 1200V rating that is applicable to an industrial use like AC400V inverter systems• The HVIC achieves low leakage current limited to a maximum 10uA of HVIC by applying a 1200V divided RESURF*1structure to optimize its surface structure.
• PolyRFP*2 structure of chip surface greatly enhances the durability.

●High tolerance to switching noise helps achieve highly reliable inverter systems• High latch-up immunity (parasitic Vertical -PNP transistor action) realized with chip’s low-impedance buried layers.

●Desaturation detection for reduced power loss reduction in power semiconductors• P-side and N-side desaturation detection prevents overcurrent thermal destruction of the power semiconductors by using
1200V P-channel MOSFET.
• The HVIC directly detects shorts and earth faults in power semiconductors on P-side and transmits fault signals to N-side,
shutting down systems.
• Desaturation detection is sperior to the detection method which is used the shunt resistor for the power loss reduction inpower semiconductors.

The cross section structureof 1200V Nch MOSFET
that applied the divided
RESURF*1 structure

Low Voltage Region

PRESURF Isolation Region(Length:Liso)High resistivity Poly-Si (Spiral)

P+P

Gate

Source

Drain

P+P+

N+

N+

N

N

Micro-N+ Buried Layer

PN

P–(Epi)

N+N

P–

N+N+P

High Voltage Region

N+ Buried Layer

P-Sub.

*1 RESURF: REduced SUrface Field *2 PolyRFP: Polycrystalline silicon Resistor Field Plate

Half-bridge Driver High-voltage (600V) IC with BSD Function M81777FP
Built-in BSD function helps to reduce
the number of parts in inverter systems.
<Main Features>●Built-in BSD function helps to reduce the number of parts in inverter systems• M81777FP for inverter systems is equipped with a BSD function that enables inverter systems and high-voltage wiring to
be designed with fewer parts.

●BSD function’s high-voltage metal oxide semiconductor (MOS) achieves high noise resistance• Mitsubishi Electric’s proprietary high-voltage MOS structure suppresses current leakage during charging.
• The MOS structure is free of parasitic elements that can cause latch-up malfunctions due to noise when switching
inverters (negative potential surge noise generated in freewheel diode during reflux mode).

HV MOSfor BSD
Internal
power supplyDrivefor BSD

Constant
current

LIN

Schmitt

Schmitt

InterlockHIN

HVLEVEL
SHIFT

Delay

UV DETECTFILTER

VB

High side
Drive

HOVS

UV DETECTFILTER

VCC

Low side
Drive

LO
GND

BG

S
(VCC)

P+

N+

G

D(VB)

N+PEpiN-

PP-(sub)

N+(Buried)

HV MOS for BSD (No parastic PNP Tr)

2

Attention points of HVIC use

The floating power supply method
The emitter/source potential of high-side IGBT/MOSFET referenced to
GND changes to the voltage of the HV terminal from 0V when
operating the application. Therefore, to drive high-side
IGBT/MOSFET, the power supply of the high-side drive circuit of HVIC
should have potential which is higher by VBS than the emitter/source
potential of high-side IGBT/MOSFET. One of the methods to apply
this voltage is the floating power supply method. Fig_right shows theexample of the floating power supply method.

Floating power supply method
Floating power supply

High-side
drive circuit

HVIC
Low-side
drive circuit

High-side
MOSFET

Low-side
MOSFET

Bootstrap circuit method and basic operation
Bootstrap circuit method is used in place of the folating power supply
method. The bootstrap capacitor(C1) is charged through the resistor(R1) and bootstrap diode(D1) by VCC, and the high-side drive circuitof HVIC is driven by the voltage of the capacitor(C1). Fig_right showsthe example of the bootstrap circuit method.
M81777FP shown in p.5 is equipped with a BSD function that enables
bootstrap circuits to be designed without R1 and C1.

Bootstrap circuit system

High-side
drive circuit

HVIC
Low-side
drive circuit

High-side
MOSFET

Low-side
MOSFET

Electrical charge and discharge current route when HVIC is operated
Fig_right shows the electrical charge and discharge current route of
C1 when HVIC is regularly operated.

■Setting of bootstrap capacitor (C1)Electrical charge and discharge
current route when HVIC is operated

Charge route
Discharge route

Initial charge and the voltage between bootstrap capacitor (C1)
To drive high-side MOSFET, the bootstrap capacitor is charged by turning on
low-side MOSFET.
The inrush charging current is from the charging path on the right
ID=(VCC/R1)e-t/(R1・C1) from the initial condition t = 0
ID=VCC/R1
VC1 is shown below. (VF:Voltage between D1 terminals, VDS:Voltage beweendrain and souce of low-side MOSFET)
VC1=VCC-VF-VDS・・・(1)Simple calculation of bootstrap capacitor (C1)
The capacitance value C1 is shown below. (T1:Maximum on-time of high-side
MOSFET, IBS:High-side drive circuit consumption current of HVIC, ΔV:Electricaldischarge allowance voltage between C1 terminals)
C1 = IBS × T1 ／ ΔV + margin・・・(2)
IBS changes depending on gate capacitance of MOSFET and carrier frequency.
And（1）and（2）expression are simplified. So please set the capacitance value
C1 based on evaluation of your system.

3High-side
drive circuit

HVIC
Low-side
drive circuit

High-side
MOSFET

Low-side
MOSFETApplication circuit examples

Configuration exampleof gate driver for motor
HVIC

MCU

[Half Bridge Driver]×3
or[3 Phase Bridge Driver]×1
or[3 Phase High side Side Driver]+[Low Side Driver]

Configuration exampleof gate driver for
DC-DC converter
HVIC
MCU

[Half Bridge Driver]×1

Configuration exampleof gate driver forIH cooking heater
Heating coil

HVIC
MCU

[Half Bridge Driver]×14

Line-up of HVIC

■1200V floating supply voltage
Device drive system

Half Bridge

Number ofinput
Generationsignals

23rd

Package outline

Type name

Floating
supplyvoltage[V]Output current[A](typ)

Dead timecontrol

Internal function

M81738FP

1200

1.0

Input
Signal

M81748FP

1200

2.0

Type name

Floating
supplyvoltage[V]M81749FP

Package dimension
Lead pitch（mm）
width x length(Unit:mm)

Package type

Number of terminals

UV,IL,NF,SC,FO,FORST,FOIN

SSOP

24

5.3×10.1

0.8

InputSignal

UV,IL,NF,DESAT,FO,CFO,FOIN,SS

SSOP

24

5.3×10.1

0.8

Output current[A](typ)

Dead timecontrol

Internal function

600+0.2/-0.35

Input
Signal

M81775FP

600+0.2/-0.5

M81776FP

600

M81777FP

600■600V floating supply voltage
Device drive system

3 PhaseNumber ofinput
Generation
signals

2×3Ф 4th

M81747FP

24th

Half Bridge

14th

600

Package outline
Package dimension
width x length
Lead pitch（mm）(Unit:mm)

Package type

Number of terminals

UV,IL,SC,FO,CFO

SSOP

24

5.3×10.1

0.8InputSignal

UV,IL,NF

SSOP

36

8.4×150.8+0.2/-0.35

Input
Signal

UV,IL

SOP

83.9×4.85

1.27+0.2/-0.35

Input
SignalUV,IL,BSD

SOP

8

3.9×4.85

1.27+0.2/-0.35

Input
SignalUV,IL,NF

SOP

8

3.9×4.85

1.27

UV,NF,SC,FO,
FORST,FOIN

SSOP

24

5.3×10.1

0.8M81774FP

600

1.0Input
Signal

M81770FP

600

3.25

Input
SignalUV,IL,SD

SSOP

24

5.3×10.1

0.8M81767FP

600

3.5Input
Signal

UV,NF

SOP

83.9×4.85

1.27

M81767JFP(for automotive)

600+0.2/-0.35

Input
SignalUV,IL,NF

SOP

83.9×4.85

1.27

M81747JFP(for automotive)

600

3.5

Input
SignalUV,IL,NF

SOP

83.9×4.85

1.27

M81734FP

600

0.5Internal

UV

SOP

8

3.9×4.85

1.27Type name

Floating
supplyvoltage[V]Output current[A](typ)

Dead timecontrol

24+1.75/-0.8−■24V floating supply voltage
Device drive system

Single Low Side
<Term>

Number ofinput
Generation
signals

14th

M81764FP

Package outline
Internal function

UV,SC,FO,CFO

Number of terminals

SOP

8Package dimension
width x length
Lead pitch（mm）(Unit:mm)

3.9×4.85

DESAT： Desaturation, BSD： BootStrap DiodeFor details of internal functions and package outline, please refer to the data sheet of each product.

5Package type

1.27

MEMO

6

HVIC

Mitsubishi Electric Power Devices Website

https://www.mitsubishielectric.com/semiconductors/powerdevices/

Keep safety first in your circuit designs!
• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead topersonal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammablematerial or (iii) prevention against any malfunction or mishap.

Notes regarding these materials• These materials are intended as a reference to assist our customers in the selection of the Mitsubishi Electric Semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual
property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
• Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples
contained in these materials.
• All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi
Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor productdistributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Electric Semiconductor home page (http://www.MitsubishiElectric.com/semiconductor/).
• When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on
the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
• Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Electric Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,medical, aerospace, nuclear, or undersea repeater use.
• The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
• If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approveddestination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
• Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Electric Semiconductor product distributor for further details on these materials or the products contained therein.

HEAD OFFICE: TOKYO BLDG., 2-7-3, MARUNOUCHI, CHIYODA-KU, TOKYO 100-8310, JAPAN

www.MitsubishiElectric.com

Revised publication, effective Apr. 2024.
Superseding publication of HG-398E Apr. 2023.
Specifications subject to change without notice.
HG-398F FU-2404 Printed in Japan <IP>

© 2024 Mitsubishi Electric Corporation