MITSUBISHI ELECTRIC CORPORATIONPUBLIC RELATIONS DIVISION
7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo, 100-8310 JapanFOR IMMEDIATE RELEASE

No. 3053

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Semiconductor & Device Marketing Div.B
Mitsubishi Electric Corporation

Public Relations Division
Mitsubishi Electric Corporation
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Mitsubishi Electric to Expand Lineup of Ku-band GaN-HEMTs
High output power of new models will help reduce size of satellite earth stations
TOKYO, September 27, 2016 – Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it
will expand its lineup of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) to include units
with 100W and 70W output power for use in satellite earth stations utilizing the Ku-band*. The new 100W
GaN-HEMT offers output power that is among the highest currently available, according to Mitsubishi
Electric’s own research as of September 27. Mitsubishi Electric will begin shipping samples on October 1.
* Microwave band ranging from 12-18GHz100W70W

Left: MGFK50G3745 Right: MGFK48G3745The demand for satellite communication is increasing, especially in Ku-band, which enables high-speed
communication even under adverse conditions, such as natural disasters, and in areas where construction ofcommunication facilities is difficult. The deployment of transmitter equipment using higher-power
GaN-HEMTs has become more common in recent years, particularly in high-speed applications such as
satellite news gathering.

Mitsubishi Electric is expanding its Ku-band GaN-HEMT lineup to meet this growing demand for higher
output power levels with the introduction of its MGFK50G3745 model, boasting an industry-leading output
power of 100W, and the 70W output power MGFK48G3745 model.

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Product Features1)

Industry-leading output power contributes to miniaturization- Transistor structure optimization, with the MGFK50G3745 model delivering an output of 100W,
ideal for satellite earth stations utilizing the Ku-band- GaN-HEMTs with fewer parts, thereby contributing to the miniaturization of transmitter equipment
in satellite earth stations

2)

Expands product line-up and meets diverse needs- New 100W and 70W models, addressing the need for more diverse output power ratings oftransmitter equipment for satellite earth stations- Individual transmitter components can be configured independently during manufacture, eliminating
the need for on-site configuration and shortening overall development times- Utilizes the existing MGFG5H1503 power amplifier as a driver stage, leveraging the latter’slinearizer device to help reduce distortion in power transmitters

Sale Schedule
Overview
Product

Application

Model

Saturated
FrequencyLinearoutputgain

power
Ku-bandGaN-Satellite earth

HEMTsstations

MGFK50G3745

MGFK48G3745

50.0dBm
13.75–14.5(100W)

GHz

48.3dBm(70W)

Shipment

10.0dB

Jan. 1, 2017

10.0dB

Oct. 1, 2016

Revised Lineup and Main Specifications (new models in bold)RF performances
ProductKu-band
GaN-HEMTs

Saturated output power

Model

Linear gain

[dBm]

[W]

[dB]

MGFG5H1503**

43.0

20

20.0

MGFK47G3745

47.0

50

8.0

MGFK48G3745

48.3

70

10.0

MGFK49G3745

49.080

7.5

MGFK50G3745

50.0

100

10.0

** Built in linearizer

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Example of GaN HEMT configuration for Ku-band power transmitter

100W output power

70W output power
Input
signal70W
output70W

20W

MGFG5H1503

Input
signal50W

20W

MGFG5H1503

MGFK48G3745

100W
output100W

MGFK50G3745
MGFK47G3745

140W output power
70W

Input
signal140W
output

50W

20W

70W

MGFG5H1503
MGFK47G3745

50W output power
Input
signalMGFK48G3745

80W output power
50W

20W

50W
outputInput
signalMGFG5H1503

MGFK47G3745

MGFG5H1503

50W

20W

80W

80W
outputMGFK49G3745
MGFK47G3745

Main Specifications
Main characteristics

SymbolMGFK50G3745

MGFK48G3745

RecommendedDrain-source voltage

VDS

24V

24Vcondition

Drain current

IDQ

2.4A

1.44A

Frequency

13.75–14.5GHz (Ku-band)

Saturated output power

Pout Typ.

100W

70W

Linear gain

GL Typ.

10.0dB

10.0dB

Power added efficiency

PAE

30%

33%

Environmental Awareness
These product are compliant with the Restriction of the Use of Certain Hazardous Substances in Electricaland Electronic Equipment (RoHS) directive 2011/65/EU.
Note: Development of these products has been partially supported by Japan’s New Energy and Industrial Technology
Development Organization (NEDO).

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About Mitsubishi Electric Corporation
With over 90 years of experience in providing reliable, high-quality products, Mitsubishi ElectricCorporation (TOKYO: 6503) is a recognized world leader in the manufacture, marketing and sales ofelectrical and electronic equipment used in information processing and communications, space development
and satellite communications, consumer electronics, industrial technology, energy, transportation andbuilding equipment. Embracing the spirit of its corporate statement, Changes for the Better, and its
environmental statement, Eco Changes, Mitsubishi Electric endeavors to be a global, leading green company,enriching society with technology. The company recorded consolidated group sales of 4,394.3 billion yen(US$ 38.8 billion*) in the fiscal year ended March 31, 2016. For more information visit:
www.MitsubishiElectric.com*At an exchange rate of 113 yen to the US dollar, the rate given by the Tokyo Foreign Exchange Market on
March 31, 2016

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