BCV72
SURFACE MOUNT SILICONNPN TRANSISTORw w w. c e n t r a l s e m i . c o m

DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCV72 is a silicon
NPN transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,designed for general purpose applications.
MARKING CODE: K8

SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance

SYMBOLVCBO
VCEO
VEBO
IC

80UNITS
V

60V

5.0V

100mA

ICM
PD

200mA

350mW

TJ, Tstg
ΘJA-65 to +150°C

357°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOLTEST CONDITIONS
MIN
TYP
ICBO
VCB=20V
ICBO
VCB=20V, TA=100°C

MAX
100

UNITS
nA

10μA

BVCEO

IC=2.0mA

60

V

BVCBO

IC=10μA

80

V

BVEBO

IC=10μA

5.0

VCE(SAT)

IC=10mA, IB=0.5mA

VBE(ON)

VCE=5.0V, IC=2.0mAhFE

VCE=5.0V, IC=2.0mA

Cob

VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=10mA, f=35MHz

fT
NF

VCE=5.0V, IC=200μA, RS=2.0kΩ
f=1.0kHz, B=200Hz

V250mV

550700mV

200450
2.5pF

300

MHz10dB

R2 (21-October 2021)

BCV72
SURFACE MOUNT SILICONNPN TRANSISTOR

SOT-23 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Base2) Emitter3) Collector
MARKING CODE: K8

SYMBOL
A
BC
DE
F
GH
IJ

DIMENSIONSINCHESMILLIMETERS
MIN
MAX
MIN
MAX
0.003
0.007
0.08
0.18
0.006
0.15
0.005
0.13
0.035
0.044
0.89
1.12
0.110
0.120
2.80
3.05
0.0751.90
0.037
0.95
0.047
0.055
1.19
1.40
0.083
0.104
2.10
2.64
0.014
0.020
0.35
0.50
SOT-23 (REV: R4)

R2 (21-October 2021)w w w. c e n t r a l s e m i . c o m

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