CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLTw w w. c e n t r a l s e m i . c o m

DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM3-800 is a
800 volt N-Channel MOSFET designed for high voltage,
fast switching applications such as Power FactorCorrection (PFC), lighting and power inverters. ThisMOSFET combines high voltage capability with lowrDS(ON), low threshold voltage, and low gate charge for
optimal efficiency.
MARKING: FULL PART NUMBERDPAK CASE
APPLICATIONS:• Power Factor Correction• Alternative energy inverters• Solid State Lighting (SSL)FEATURES:• High voltage capability (VDS=800V)• Low gate charge (Qg(tot)=11.3nC TYP)
• Low rDS(ON) (3.8Ω TYP)

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)		
SYMBOL		 UNITS
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
30
V
Continuous Drain Current (Steady State)ID
3.0
A
Maximum Pulsed Drain Current, tp=10µs
IDM
12A
Continuous Source Current (Body Diode)IS
3.0
A
Maximum Pulsed Source Current (Body Diode)ISM
12A
Single Pulse Avalanche Energy (Note 1)
EAS
173mJ
Power Dissipation
PD80W
Operating and Storage Junction Temperature
TJ, Tstg-55 to +150°C
Thermal ResistanceΘJC1.56°C/W
Thermal Resistance
ΘJA
110°C/W
Note 1: L=30mH, IAS=3.15A, VDD=100V, RG=20Ω, Initial TJ=25°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOLTEST CONDITIONSMINTYPMAXUNITSIGSSF, IGSSR VGS=30V, VDS=0			 100nA
IDSS
VDS=800V, VGS=0		 0.08
1.0μA
BVDSS
VGS=0, ID=250µA
800			 VVGS(th)VGS=VDS, ID=250µA
2.0		 4.0
VVSD
VGS=0, IS=3.0A			 1.4V
rDS(ON)
VGS=10V, ID=1.5A		 3.84.8Ω
Crss
VDS=25V, VGS=0, f=1.0MHz		2.0		pF
Ciss
VDS=25V, VGS=0, f=1.0MHz		
415		
pF
Coss
VDS=25V, VGS=0, f=1.0MHz		44		pFR2 (8-August 2022)

CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLTELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOLTEST CONDITIONS		
TYP
UNITS
Qg(tot)
VDS=640V, VGS=10V, ID=3.0A (Note 2)		11.3nC
Qgs
VDS=640V, VGS=10V, ID=3.0A (Note 2)		
2.55
nCQgd
VDS=640V, VGS=10V, ID=3.0A (Note 2)		5.28
nCtd(on)
VDD=400V, ID=3.0A, RG=25Ω (Note 2)		
13.87
nstr
VDD=400V, ID=3.0A, RG=25Ω (Note 2)		30.53
nstd(off)
VDD=400V, ID=3.0A, RG=25Ω (Note 2)		25
nstf
VDD=400V, ID=3.0A, RG=25Ω (Note 2)		25nstrr
VGS=0, IS=3.0A, di/dt=100A/μs (Note 2)		
437
nsQrr
VGS=0, IS=3.0A, di/dt=100A/μs (Note 2)		1.68
μC

Note 2: Pulse Width < 300μs, Duty Cycle < 2%

DPAK CASE - MECHANICAL OUTLINESYMBOL
A
B
CDE
F
G
H
JK
LM
NP
R

DIMENSIONSINCHESMILLIMETERS
MIN
MAX
MIN
MAX
0.083 0.108
2.10
2.75
0.016 0.032
0.40
0.81
0.035 0.063
0.89
1.60
0.203 0.228
5.15
5.79
0.020
0.51
0.016 0.024
0.40
0.60
0.051 0.071
1.30
1.80
0.248 0.268
6.30
6.81
0.197 0.217
5.00
5.50
0.209 0.245
5.30
6.22
0.025 0.040
0.64
1.02
0.090 0.115
2.30
2.91
0.012 0.045
0.301.14
4.60
0.180
0.090
2.30
DPAK (REV: R1)

PIN CONFIGURATIONLEAD CODE:1) Gate
2) Drain3) Source4) Drain
Pin 2 is common to the tab (4)MARKING: FULL PART NUMBER

R2 (8-August 2022)w w w. c e n t r a l s e m i . c o m

CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLTTYPICAL ELECTRICAL CHARACTERISTICS

R2 (8-August 2022)w w w. c e n t r a l s e m i . c o m

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