POWER DEVICES

POWER DEVICES

Innovative Power Devices
for a Sustainable Future
Mitsubishi Electric power modules are at the forefront of the latest energy innovations that seek to solve global
environmental issues while creating a more affluent and comfortable society for all. Some of these innovations arephotovoltaic (PV) and wind power generation from renewable energy sources, smart grids realizing efficient supply of
power, hybrid/electric vehicles (HVs/EVs) that take the next step in reducing carbon emissions and fuel consumption,and home appliances that achieve ground-breaking energy savings. Whether in appliances, railcars, EVs or industrial
systems, our power modules are key elements in changing the way energy is used.

Wind power
generation
Household electricalappliances
Inverters

Induction heatingcooking stoves

EnergyCreation

Smart grid

Effective useof energy
Electric/
Hybrid vehicles

Industrial robots

MotorsTraction

1

Photovoltaic power
generation

IndexConnection
Product

SiC
Power Modules

SOPIPM

DIPIPM

IPM

IGBT
Modules

HVIGBT
Modules

HVDIODE
Modules

MOSFET
Modules

Power Modules
for xEV*1

Page

5ｰ12

IGBT
ModuleIntelligent
Power
ModuleMOSFET
Module

Diode
Module✓ ✓ ✓ ✓

（Hybrid）

✓

13

✓

19ｰ22

23ｰ32

33ｰ36

✓
✓
✓

37ｰ38

✓

39

40ｰ41

✓

Rated
current

600V

15A-30A

1200V

75A-1200A

1700V

300A-1200A

3300V

185A-800A

600V

2A

Main Application

Home ApplianceIndustrial equipment
TractionHome Appliance

✓

13ｰ18

Rated
voltage

600V

5A-75A

1200V

5A-100A

600V

75A

650V

50A-450A

1200V

25A-450A

600V

200A-600A

650V

50A-600A

1200V

35A-1400A

1700V

75A-1200A

2000V

200A-1200A

1700V

600A-2400A

3300V

400A-1800A

4500V

450A-1500A

6500V

600A-1000A

3300V

600A-1200A

4500V

450A-1500A

6500V

300A-1000A

Home ApplianceIndustrial equipment

Industrial equipment

Traction High Power

Traction High Power

75V
100V

100A-300A
Industrial equipment

150V
650V

600A-700A
xEV*1 EV: Electric Vehicle*2 SOPIPM, DIPIPM, SLIMDIP, DIPIPM+, DIPPFC and CSTBT are trademarks of Mitsubishi Electric2

Development of Mitsubishi Electric SiC Power Devices
and Power Electronics Equipment Incorporating Them
Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics,
we succeeded in developing various elemental technologies.
In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device.
Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery.
We will continue to provide competitive SiC power modules with advanced development and achievements from now on.

2010

January 2010
Developed large-capacity
power module equippedwith SiC diode

October 2010
Launched "Kirigamine"inverter air conditioner

2011

January 2011
Verified highest power
conversion efficiency*1 for solar
power generation system
power conditioner(domestic industry)*2

2014

February 2014
Developed EV motor
drive system withbuilt-in SiC inverter

May 2014
Began shipping
samples of hybrid
SiC power modules
for high-frequency
switching applications

October 2011
Commercialized SiC inverter
for use in railcars

1990s

Early

Developed new material,silicon-carbide (SiC) power
semiconductor, maintaining
a lead over other companies

2000s

Developed various
elemental technologies

2006

January 2006
Successfully developed
SiC inverter for driving motor
rated at 3.7kW

3

2009

February 2009Verified 11kW SiC inverter,world's highest value*1 withapprox. 70% reductionin power loss

November 2009Verified 20kW SiC inverter,world's highest value*1 withapprox. 90% reductionin power loss

November 2014
Launched
Large Hybrid SiC
DIPIPMTM for
PV Applications

2012
March 2012
Developed motor systemwith built-in SiC inverter

September 2012
Verified built-in main circuit
system for railcars

July 2012
Began shipping samplesof hybrid SiC
power modules

2013
February 2013
Developed SiC for
application in elevator
control systems

March 2013
Delivered auxiliary power
supply systems for railcars
December 2012
Launched CNC
drive unit equippedwith SiC power module

Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI)
and New Energy and Industrial Technology Development Organization (NEDO).

Contributing to the realization of a low-carbon society
and more affluent lifestyles

2024

2018

2017

March 2024
J3-Series Full-SiC
Power Mdules
Began shipping
samplesJanuary 2018
New 6.5kV Full-SiC Power
Semiconductor Module
Achieves World's Highest
Power Density

March 2017
Launched SiC-SBD

December 2018
Mitsubishi Electric andthe University of Tokyo
Reveal New Mechanism
for Enhancing Reliabilityof SiC Power
Semiconductor Devices

2021
January 2021
Launched
Second-generation
Full-SiC
Power Modules

March 2017
Develops World’s
smallest SiC Inverterfor HEVs.
September 2017
Develops SiC Power Device with
Record Power Efficiency
December 2017
Mitsubishi Electric and the University ofTokyo Quantify Factors for Reducing
SiC Power Semiconductor Resistanceby Two-Thirds

2015

January 2015
Launched power conditioner
for PV equippedwith full SiC-IPM*2 June 2015
Railcar traction system withfull SiC power modules installedin Shinkansen bullet trains

February 2013
Developed technologies
to increase capacities of
SiC power modules

May 2013
Launched SiC power
modules

December 2013
Launched railcar traction inverterwith full SiC power module

2020
November 2020
Launched
4-terminal
SiC-MOSFETs

2019
June 2019
Began shipping
samples of
1200V
SiC-SBD

2016
April 2016
Launched Super mini
Full SiC DIPIPM

July 2020
Launched
SiC-MOSFET
July 2020
Develops Accurate Circuit
Simulation Technology
for SiC-MOSFETs

February 2019
Develops Super Compact Power
Unit for Hybrid Electric Vehicle
September 2019
Trench-type SiC-MOSFET withunique electric-field-limiting
structure developed

October 2016
Launched package
air conditioners withfull SiC DIPIPM in JapanMay 2016
Launched room
air conditioners withfull SiC DIPIPM in Japan* The year and month listed are based on press releases or information released during the product launch month in Japan.
*1 Researched in press releases by Mitsubishi Electric. *2 Mitsubishi Electric solar-power generation system discontinued on March 31, 2020.

4

SiC Power Modules
Data sheet
here■ Lineup of SiC Power Modules
Application

Product name

Model

RatingVoltages[V] Current[A]FMF300BXZ-24B

300

FMF400BX-24B

400

FMF400BXZ-24B

400

RMF400DU-24B

400

FMF400DY-24B

400

FMF600DXZA-24B

1200

600

FMF800DX-24B

800

FMF800DXZA-24B

800

FMF1200DXZ-24B

1200

Industrial

FMF300DXZ-34B

300

equipment

FMF300E3XZ-34B

1700

FMF600DXE-34BN

States

Page
7
6

4 in1

7
2 in1(Diode)
6600

FMF600DXE-24BN

Full SiC Power Modules

Connection

7

6
2 in1

7

300

2 in1(Chopper)

600

2 in1

6

75

6 in1

7

PMF75CGA120
Full SiC-IPM

Hybrid SiC Power Modules
for High-frequency Switching
Applications

Full SiC Power Modules
Traction inverter
HVDC system

Hybrid SiC Power Modules

PMF75CGAL120
CMH100DY-24NFH

100

CMH150DY-24NFH

150

CMH200DU-24NFH

200

CMH300DU-24NFH

Ful SiC Super mini DIPIPM

appliances
Ful SiC Super mini DIPPFC

5

1200

300

CMH400DU-24NFH

400

CMH600DU-24NFH

600

CMH400HC6-24NFM

400

FMF185DC-66A

185

FMF375DC-66A

375

FMF750DC-66A

3300

750

FMF800DC-66BEW

800

CMH600DC-66X

3300

600

CMH1200DC-34S

1700

1200

PSF25S92F6-A6
PSF30L92A6-A

Commerciallyavailable

2 in1

1in1

2 in1

15
600

600

8

750

FMF750DC-66A-1

PSF15S92F6-A6
Home

1200

25
30

6 in1

2 Phase interleaved PFC

910

SiC Power Modules
New Products

NX-type Full-SiC Power Modules for Industrial Equipment
FMF600DXE-24BN/FMF600DXE-34BN Commercially available
Will contribute to more efficient, smaller and lighter
industrial equipment by reducing internal inductance andincorporating an SiC chip
■ Features

Di̲SW
Di̲DC

■ Power loss comparison
Tvj Equality* Comparison with the same rated value of the conventional 7th Gen. IGBT modules

Model

Rated
voltage

FMF600DXE-24BN

1200V

FMF600DXE-34BN

1700V

Rated
current

Circuit
conﬁguration

Package size
(D x W)

600A

2 in 162 152mm

Approx.

Power loss［W］■ Product lineup

Tr̲SW
Tr̲DC

Temperature
supressed
approx. 60℃

5 times carrier
frequency

Power loss
reducedapprox. 70%

f C=7kHzIGBT Module(CM600DX-34T)

Temperature［℃］• Electrode structure optimized to achieve internal inductance of
9nH, 47% lower than that of the existing module*• NX-type package compatibility allows new module to easily
replace current version• Power loss reduced approx. 70% compared to the conventional
product*

f C=35kHz

f C=7kHz

Full SiC Module(FMF600DXE-34BN)

Condition: VCC=900V, IO=300Apeak, PF=0.8, Modulation=1, Three-phase modulation, Tvj=150℃

Full-SiC Power Modules for Industrial Equipment
Commercially available

Contributes to reducing size/weight ofindustrial-use inverters■ Features■ Product lineup
Model

Rated
voltageRatedcurrent

Circuit
conﬁguration

Package size
(D x W)

4 in 192.3 121.7mm

400A

2in1(Diode)FMF400BX-24B
RMF400DU-24B
FMF400DY-24B
FMF800DX-24B

1200V

800A

2 in 180 110mm
62 108mm
92.3 121.7mm

FWD̲SW
FWD̲DC

1200V/800A Full SiC Power module

Tj

Temperature
supressed
approx. 30ºC
Power loss
reducedapprox. 70%

I o=400Arms
fc=15kHzSi IGBT module

Tr̲SW
Tr̲DC

Tj Equality

Approx.
1.6 times
output current

Approx.
4.6 times
carrier frequency

I o=650Arms

I o=400Arms

fc=15kHz

Temperature［℃］* Comparison with the same rated value of the conventional 7th Gen. IGBT modules■ Power loss comparison

Power loss［W］• Power loss reduced approx. 70% compared to the conventional
product*• Low-inductance package(92.3mm x 121.7mm) adopted to deliver
full SiC performance
・Package compatible with the conventional product(62mm x
108mm, 28mm terminal pitch)・Contributes to incereasing the output current and downsizing
peripheral components by low power loss characteristics of SiC

fc=70kHz

Full-SiC module

Condition:Vcc=600V, PF=0.8, Modulation=1 ,Three-phase modulation, Tj =125℃

6

SiC Power Modules
Full-SiC Power Modules for Industrial Equipment(built-in short-circuit protection function) Commercially available
Contributes to enhancing the performance of industrial-use inverters
thanks to built-in protection function for short circuit*Comparison with the same rated value of theconventional 7th Gen. IGBT modules■ Product lineup

Rated
voltage

Model

Rated
Package size
Circuitcurrent conﬁguration(D x W)

FMF300BXZ-24B

300A

FMF400BXZ-24B

400A

4 in 1600A

2 in 1

FMF800DXZA-24B★

800A

2 in 1

FMF1200DXZ-24B

1200A

2 in 1

FMF300DXZ-34B

300A

2 in 1300A

2 in 1(Chopper)

FMF600DXZA-24B★

FMF300E3XZ-34B

1200V

1700V

4 in 179.6 122mm

152 122mm
79.6 122mm★:New ProductTemperature
supressed
approx. 33℃

Power loss［W］■ Protection circuit diagram
Full SiC module

Drive Circuit(User)

VD
G

SC
DetectE

Tr̲SW
Tr̲Dcrev

Approx.
6.7 times
carrier frequency

Power loss
reducedapprox. 80%

I O =300Arms
F C=15kHz

IGBT module(CM600DX-24T)Tr̲DC

Tvj Equality

Approx.
1.8 times
output current

I O =300Arms
F C=15kHzSC
Filter/Invert

Di̲SW
Di̲DC

■ Power loss comparison

I O =560Arms
F C=15kHz

Temperature［℃］■ Features

・By using short circuit monitoring
circuit in the module it is possible
to transfer a short circuit detection
signal to the system side
・Power loss reduced approx.80%
compared to the conventional
product*
・Low- inductance package adopted
to deliver full SiC performance

I O =300Arms
F C=100kHz

Full-SiC module(FMF600DXZA-24B)

Condition: VCC=600V, IO=300Apeak, PF=0.8, Modulation=1, Three-phase modulation, Tvj=150℃

1200V/75A Full SiC-IPM for Industrial Equipment
PMF75CGA120/PMF75CGAL120 Commercially available
SiC chips(MOSFET and Schottky Barrier Diode) incorporated in an IPM with a built-in drive circuit
and protection functions Power loss reduction of approx.70%
contributes to improving the performance of industrial equipment■ Features• Realized high performance and low power loss by 2nd. generation SiC-MOSFETand SiC-SBD with current sense and temperature sense• External size is reduced approx.30% with the conventional Silicon IPM products* of the same rating.
• Available to drive it by the equivalent I/F and power supply circuit with the Silicon IPM products.

* Conventional product: Mitsubishi Electric G1 Series PM75CG1B120■ Internal circuit diagram:SiC-MOSFET: SiC-SBD

FWD̲SW
FWD̲DC■ Power loss comparison

IGBT̲SW
IGBT̲DCU

V

W

Power loss［W］

P

Approx.

70%

reduction

Si-IPM
N

7

Full SiC-IPM

Conditions: VCC=600V, IO=31Arms, fc=15kHz, VD=15V, P.F.=1, Modulation=1, Three-phase modulation, Tj=125℃

SiC Power Modules
Hybrid SiC Power Modules for High-frequency
Switching Applications Commercially available
For optimal operation of power electronics devices that conduct high-frequency switching■ Features■ Product lineup• Power loss reduction of approx. 40%
contributes to higher efficiency, smaller
size and weight reduction of total system• Suppresses surge voltage by reducing
internal inductance• Package compatible with the conventional
product*

Applications

Industrial
equipment* Conventional product: Mitsubishi Electric
NFH Series IGBT Modules

Rated Rated
Circuit
External size
voltage current conﬁguration
(DxW)

Model
CMH100DY-24NFH

100A

48 94mm

CMH150DY-24NFH

150A

48 94mm

CMH200DU-24NFH

200A
1200V

CMH300DU-24NFH

2 in 1300A

CMH400DU-24NFH

400A

CMH600DU-24NFH

600A

CMH400HC6-24NFM

400A

62 108mm
62 108mm
80 110mm
80 110mm

1 in 162 108mm

FWD̲SW
FWD̲DC■ Power loss comparison■ Recovery waveform (FWD)

Tr̲SW
Tr̲DC

Approx.

40%

Power loss [W]

CM600DU-24NFH(Si-IGBT)

IE:100A/div
CMH600DU-24NFH(Hybrid SiC)

reduction

CM600DU-24NFH(Si-IGBT)

200ns/div

CMH600DU-24NFH(Hybrid SiC)

Condition: VCC=600V, IO=600Ap, fC=15kHz, P.F=0.8, Modulation=1, Three-phase modulation, Tj =125˚C

3300V Full/SBD-embedded/Hybrid SiC Power Modules for Traction Inverters and HVDC system
FMF185DC-66A / FMF375DC-66A / FMF800DC-66BEW
FMF750DC-66A / FMF750DC-66A-1 / CMH600DC-66X Commercially available
Contributes to energy saving and downsizing
for inverters in traction motors, DC-power transmitters,
large industrial machinery■ Features[Full SiC]
・Suitable chip set combination for high speed
switching・Reduced power loss compared to the conventional
products*
・Low inductance package maximize SiC perfomance[SBD-embedded SiC]
・Adoption of SBD embedded SiC MOSFET have
reduced switching losses compared to theconventional Full SiC■ Product lineup
Model
FMF185DC-66A

185A
375A

FMF375DC-66A

Full SiC

Rated Rated
Circuit
External size
Voltage Current conﬁguration ( D x W )750A

FMF750DC-66A

FMF750DC-66A-1（*1）3300V 750A

SBD-embedded
FMF800DC-66BEW★(*1,2)
SiC-MOSFET
Hybrid SiC

CMH600DC-66X

2 in 1

100 140
mm

800A
600A

★: New product(*1) Thermistor-equipped(*2) This product falls under item number 2 (41)3 of Appended Table 1 of the Export Trade Control Order.

* Si product: Mitsubishi Electric HVIGBT, CM600DA-66X■ Internal circuit diagram:SiC-MOSFET

1 (P):SBD-embedded SiC

1 (P)

3
4
5(AC)

11 (D)

1000

2 (P)

8(D)

9 (G)
10 (S)

Comparison of power loss (switching loss) in inverter operation.

[SBD-embedded SiC: FMF800DC-66BEW]

2 (P)

8(D)

9 (G)
10 (S)3
4
5(AC)SW(on)SW(oﬀ)
SW(recovery)■ Power loss comparison

Switching losses［w］[Full SiC: FMF750DC-66A（*3）]:SiC-SBD

800

Approx.

600

81%

reduction
400

Approx.

92%

reduction

200

12 (G)
13 (S)

14, 15 (NC)

12 (G)
13 (S)
14
6 (N)

7 (N)

11, 15 (NC)

0

6 (N)

7 (N)

Si

Full SiC

SBD-embedded
SiC-MOSFET

Condition: VDD=1800V, lO=400Arms, fC=1kHz, Modulation ratio= 1, P.F=+0.85(*3) Please refer to the data sheet for other model.

8SiC Power Modules
1700V/1200A Hybrid SiC Power Modules for Traction Inverters
CMH1200DC-34S Commercially available
High-power/low-loss/highly reliable modules appropriate for use in traction inverters■ Main specifications■ Features• Power loss reduced approximately 30%
compared to the conventional product*• Highly reliable design appropriate foruse in traction• Package compatible with theconventional product*

Max.operating temperature
Isolation voltage
Collector-emitter saturation voltage
turn-onSwitching loss
850V/1200V
turn-oﬀ
Emitter-collector voltage
Capacitive charge

ModuleSi-IGBT@150˚C
SiC-SBD@150˚C

150℃
4000Vrms
2.3V
140mJ
390mJ
2.3V
9.0μC

* Conventional product: Mitsubishi Electric Power Module
CM1200DC-34N■ Internal circuit diagram

2

(E1)

G1

G2

Si-IGBTC1

IGBT̲SW
IGBT̲DC

Approx.

(C2)

C2

E1

FWD̲SW
FWD̲DC■ Power loss comparison

30%

Power loss [W]4:SiC-SBD

Si-IGBT

reduction

E2
(C1)

3

1

CM1200DC-34N(E2)

CMH1200DC-34S

Condition: VCC=850V, IO =600Arms, fc=1kHz, P.F=1, Modulation=1,
Three-phase modulation, Tj =125˚C

600V/15A,25A Full SiC Super mini DIPIPMTM
for Home Appliances
PSF15S92F6-A6/PSF25S92F6-A6 Commercially available
Contributes to extremely high power-efficiency in air conditioners,
and easily applicable to industrial equipment■ Features• SiC-MOSFET achieves reduction in ON resistance, power loss reduced approx. 70% compared

to conventional product*• Construct low-noise system by reducing recovery current• Numerous built-in functions: Bootstrap diode for power supply to drive P-side, temperature

information output, etc.

• Unnecessary minus-bias gate drive circuit using original high Vth SiC-MOSFET technology• As package and pin layout compatibility with conventional products* is ensured, simply replacewith this product to improve performance*Conventional product: Mitsubishi Electric Super mini DIPIPM Series■ Internal block diagram

LVIC

Module power loss [W]：SiC-MOSEFT

HVIC

9

NV

NU

W

V

U

P

Tr̲SW
Tr̲DC

Approx.

75%

reduction

Si DIPIPM
NW

Di̲SW
Di̲DC

■ Power loss comparison

Full SiC DIPIPM

Condition:Vin=300V, VD=15V(Si),18V(SiC), fc=5kHz, Io=1Arms, P.F.=0.8, Modulation=1,
Three phase modulation, Tj=125℃

SiC Power Modules
Full SiC Super mini DIPPFCTM for Home Appliances
PSF30L92A6-A Commercially available
Utilizing SiC enables high-frequency switching and contributes toreducing the size of peripheral components■ Features• Incorporating SiC chip in the Super mini package widely used in home
appliances• The SiC chip allows high-frequency switching (up to 40kHz) and contributes
to downsizing the reactor, heat sink and other peripheral components• Adopts the same package as the Super mini DIPIPM to eliminate the need fora spacer between the inverter and heat sink, and to facilitate its
implementation

Vin1
Fo
CFo

:SiC-SBD

P1
P2

VD
Vin2

:SiC-MOSFET

L1

LVIC

L2

GND

N2

Cin1
Cin2

N1

Di̲SW
Di̲DC

■ Power loss comparison

Power loss [W]■ Internal block diagram (PSF30L92A6-A)

Tr̲SW
Tr̲DC

Approx.

65%

reduction

Si DIPPFC

Full SiC DIPPFC

Condition:Vin=230V, Vout=370V, VD=15V(Si),18V(SiC), fc=80kHz(fPWM=40kHz),
Iin=16Arms, L=0.3mH, 2-phase interleaved PFC, Tj=125℃

10

SiC Power Modules■ Outline Drawing of SiC Power Modules

Full SiC Power Modules for
Industrial Equipment
FMF400BX-24B,
FMF800DX-24B

Unit: mm

Full SiC Power Modules for
Industrial Equipment
FMF400DY-24B

Full SiC Power Modules for
Industrial Equipment
FMF300BXZ-24B
FMF400BXZ-24B

92.3

79.1

122

17

30

30

121.7

62

108

Full SiC Power Modules for
Industrial Equipment
FMF600DXZA-24B/FMF800DXZA-24B
FMF300DXZ-34B/FMF300E3XZ-34B

Full SiC Power Modules for
Industrial Equipment
FMF1200DXZ-24B

Full SiC power Modules for
Industrial Equipment
FMF600DXE-24BN
FMF600DXE-34BN
17

152

62

122

79.6

122

23.3

30

152

Full SiC IPM for
Industrial Equipment
PMF75CGA120
PMF75CGAL120

Hybrid SiC Power Modules forHigh-frequency Switching Applications
CMH100DY-24NFH
CMH150DY-24NFH

11

94

48

62
29

108

29

22

50

90

Hybrid SiC Power Modules forHigh-frequency Switching Applications
CMH200DU-24NFH
CMH300DU-24NFH

SiC Power Modules■ Outline Drawing of SiC Power Modules

Hybrid SiC Power Modules forHigh-frequency Switching
Applications
CMH400HC6-24NFM

140
40

29

36

80

3300V Full/Hybrid SiC Power Modules
for Traction Inverters and HVDC system
FMF185/375/750DC-66A
FMF800DC-66BEW
FMF750DC-66A-1
CMH600DC-66X
100

108

62

Hybrid SiC Power Modules forHigh-frequency Switching Applications
CMH400DU-24NFH
CMH600DU-24NFH
Full SiC Power Modules for
Industrial Equipment
RMF400DU-24B
110

Unit: mm

1700V/1200A Hybrid SiC Power Module
for Traction Inverters
CMH1200DC-34S

Full SiC Super mini DIPIPM™
PSF15S92F6-A6/PSF25S92F6-A6
Full SiC Super mini DIPPFC™
PSF30L92A6-A
Long

24

140

130

Type Name LotNo.

3.5

38

38

12

DIPIPM™/SOPIPM™
Package, Main Application
Main application

Package
SOPIPM

Fan motor

SLIMDIPAir conditioner/Fan motor/Washing machine/Refrigerator

Super mini

Air conditioner/Washing machine/Servo/RobotMini

Air conditioner/Motion control

Large

Commercial air conditioner/Motion control

DIPIPM+

Commercial air conditioner/Motion control

Large DIPIPM+

Commercial air conditioner/Motion control

Data sheet
here

Rated Lineup
Rated current
2A

5A

10A

15A

20A

25A

30A

35A

40A

75A

50A

100A

600V
Rated
voltage
1200V

Featured Products<Main Features>・Optimal pin layout realizes easier PCB wiring design and enables smaller PCB size
・Insulation distance between pins ensured, realizing easier board mounting without coating process・Newly integrated interlock function in addition to conventional protection features for robust operation
・Installing RC-IGBT*1 simultaneously realizes compact package and low loss performance can go
thogether・Bootstrap diode is integrated for the P-side drive power supply like conventional DIPIPM series,
reducing the number of peripheral external parts

Type Name LotNo.

27.4
3.3

A small surface mount package IPM
enables easy system design
by enough insulation distance and protection function
for fan and low-power motor drive applications

15.2■ Outline Drawing

Surface mount package IPM SOPIPM*1 Reverse-conducting IGBT■ SOPIPM[Term]

13

Type nameRated voltage

Rated current

Chips

Protection

Shape

SP2SK

600V

2A

RC-IGBT, HVIC,
LVIC, BSD

UV, SC, OT
VOT, IL

Surface mountpackage

UV：Power supply Under Voltage protection
SC：Short Circuit protection
OT：Over Temperature protection
VOT：Analog Temperature Output
IL：Inter Lock

DIPIPM™

Featured Products
New design with expanded operating temperature range and lower noise
contributes to easier system design and reduction in system cost
■ Radiation noiseSuper Mini DIPIPM Ver.7

Improve over -10dB

90<Main Features>・New low-noise 7th-generation CSTBT*1 incorporated, keeping same efficiency as DIPIPM
Ver.6 Series. System cost reduction for noise suppression parts achieved.
・Maximum junction temperature range expanded to 175ºC, supporting instantaneous
overcurrent capability at overload operation
・Wider terminal base shape contributes to improved terminal strength and suppresses
increase in temperature
・High compatibility for terminal layout, easy to replase from the conventional series

Noise ﬂoor
Ver.6(20A/600V)
Ver.7(20A/600V)

Radiation noise[dBμV/m]

80*1 CSTBTTM: Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect

70
60
50
40
30
20
10
30

100
Frequency[MHz]300

Featured Products
Expanded line up for SLIMDIP series contributes
system cost down for home appliances and fan drive application.
SLIMDIPTM

SLIMDIP-S, SLIMDIP-M, SLIMDIP-L, SLIMDIP-W, SLIMDIP-X, SLIMDIP-Z<Main Features>
・RC-IGBT *1 incorporated, reducing package size 30% compared toSuper mini DIPIPM
・Maximum case temperature expanded to 115℃, increasing theoperating temperature range and leading to easier system designtemperature range and leading to easier system design
・Additional terminals for floating supply and built-in bootstrap diodes
simplify PCB wiring pattern・Both VOT *2 and OT *3 functions integrated for temperature protection
・Expanded lineup accommodates wide-ranging inverter capacities■ Wiring example
Power supply
and control■ Product lineup
Type nameBootstrap
capacitor

Main application

SLIMDIP-S

Fan, refrigerator

SLIMDIP-M

Fan, washing machine

SLIMDIP-L

Air conditioner

SLIMDIP-W

Washing machine, Fan

SLIMDIP-X

Air conditioner

SLIMDIP-Z

Air conditioner*1 Reverse conducting IGBT *2 VOT：Analog Temperature Output *3 OT：Over Temperature protection

NW NV NU

W

V

U

P

Shunt
resistor
To motor

Customer Support
EVA Series evaluation boards for each DIPIPM Series
to support system design

For Super mini DIPIPM
EVA11-SDIP

For DIPIPM+
EVA14-DIP+

For SOPIPM
EVA18-SOP

For Large DIPIPM Series(Microcomputer-embedded demonstration board)
EVA20-LDIP* For further information, please contact sales office.

14

Lineup of DIPIPM™
■ Series Matrix of 600V DIPIPM
VCES

600V

SeriesIC

SLIMDIPSuper mini
Ver.7

Mini
Ver.7

Ver.6

ー

5A

SLIMDIP-S

PSS05S92F6-AG
PSS05S92E6-AG

10A

SLIMDIP-M

PSS10S92F6-AG
PSS10S92E6-AG

PSS10S51F615A

SLIMDIP-L
SLIMDIP-W

PSS15S93F6-AG
PSS15S93E6-AG

PSS15S92F6-AG
PSS15S92E6-AG

PSS15S51F620A

SLIMDIP-X

PSS20S93F6-AG
PSS20S93E6-AG

PSS20S92F6-AG
PSS20S92E6-AG

PSS20S73F6

PSS20S51F6
PSS20S71F630A

SLIMDIP-Z★

PSS30S93F6-AG
PSS30S93E6-AG

PSS30S92F6-AG
PSS30S92E6-AG

PSS30S73F6

PSS30S71F6

PSS50S73F6

PSS50S71F6

PSS05S51F6

Ver.6

CIB/CI

PSS50SA2F6

PSS50MC1F6
PSS50NC1F6＊5

PSS40S93F6-AG
PSS40S93E6-AG

40A
50A
75A

PSS75SA2F6

Chip
Protective
Function

DIPIPM+

PSS35S92F6-AG
PSS35S92E6-AG

35A

Speciﬁcations

Large

RC-IGBT

CSTBT

CSTBT

CSTBT

CSTBT

CSTBT

CSTBT

UV

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

P-side/ N-side/ BrakeSC

N-sideN-sideN-sideN-sideN-sideN-side with senseN-sideOT

N-sideN-side＊1

N-side＊1

ー

ー

ー

ー

VOT

N-sideN-side＊1

N-side＊1

N-sideN-sideN-sideN-sideActive input

High(3/5V)

High(3/5V)

High(3/5V)

High(3/5V)

High(3/5V)

High(3/5V)

High(5V)

Emitter pin of N-side

Open

Open

Open

Open

Open

Open

Open

N-side (UV,SC)

N-side (UV,SC)

N-side (UV,SC)

N-side (UV,SC)

Fault output

N-side(UV,SC,OT) N-side (UV,SC,OT) N-side(UV,SC,OT)

Insulation voltage

2000Vrms＊2

1500Vrms＊2

1500Vrms＊2

2500Vrms

2500Vrms

2500Vrms

2500Vrms

Insulation structure

Insulation sheet

Insulation sheet

Insulation sheet

Insulation sheet

Molding resin＊4/Insulation sheet

Insulation sheet

Insulation sheet

RoHS directive＊6

CompliantCompliantCompliantCompliantCompliant＊3

CompliantCompliant

Short

Control side ofZigzag, ShortーーControl side of Zigzag(Normal, Short)

Pin type

＊7

Long

Long

★: New product[Notes] ＊1：PSSxxS9xE6 has OT function, PSSxxS9xF6 has VOT function＊2：AC60Hz,1minute.Corresponds to isolation voltage 2500Vrms
in the case the convex-shaped heat sink
＊3：High melting point solder (Lead Over 85%) is used
for chip soldering of PSSxxS51F6 only.
＊4：Molding resin insulation for PSSxxS51F6/-C＊5：PSS50NC1F6 is not included brake.
＊6：RoHS directive (2011/65/EU and (EU) 2015/863)＊7：Refer the datasheet of each product for more detail

CSTBT : Mitsubishi Electric's unique IGBT that makes use of
the carrier cumulative eﬀect
RC-IGBT: Reverse conducting IGBTHVIC: High Voltage IC
LVIC: Low Voltage IC
UV: Power supply Under Voltage protection
OT: Over Temperature protection
SC: Short Circuit protection
VOT: Analog Temperature Output
RoHS: Restriction of the use of certain Hazardous Substancesin electrical and electronic equipment
CIB: Converter Inverter Brake,
CI: Converter Inverter

+
+

TM

+

V UFB

P

V VFB

U

V WFB
UP
VP
WP
V P1

HVIC

V

M

W
+

V NC

MCU

[Term]■ Application circuit of super mini DIPIPM

UN
VN

NU

WN
5V
FO

LVIC

NV

V OT
15V
+

V N1

NW

V NC
CIN
Shunt
resistor

15

Lineup of DIPIPM™
■ Series Matrix of 1200V DIPIPM
VCES

1200V
SeriesLarge

DIPIPM+

Large DIPIPM+

Ver.7

ー

Ver.6

CIB/CI

CI

5A

PSS05S73FTPSS05S72FTPSS05SA2FTPSS05MC1FT＊1
PSS05NC1FT

10A

PSS10S73FTPSS10S72FTPSS10SA2FTPSS10MC1FT＊1
PSS10NC1FT

15A

PSS15S73FTPSS15SA2FTPSS15MC1FT＊1
PSS15NC1FT

25A

PSS25S73FTPSS25SA2FTPSS25MC1FT＊1
PSS25NC1FT

35A

PSS35SA2FTPSS35MC1FT＊1
PSS35NC1FT

50A

PSS50SA2FTPSS50NE1CT75A

PSS75SA2FTPSS75NE1CT

IC

Mini

PSS100NE1CT

100A
CSTBT

CSTBT

CSTBT

CSTBT

CSTBT

UV

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side/Brake

P-side/N-sideSCN-sideN-sideN-sideN-sideN-side

OT

ー

ー

ー

ー

ー

VOT

N-sideN-sideN-sideN-sideN-sideActive input

High(5V)

High(5V)

High(5V)

High(5V)

High(3/5V)

Open

Open

Open

Open

Open

N-side (UV,SC)

N-side (UV,SC)

N-side (UV,SC)

N-side (UV,SC)

N-side (UV,SC)

Protective
Function

Chip

Speciﬁcations

PSS35NE1CT★

Emitter pin of N-side
Fault output
Insulation voltage

2500Vrms

2500Vrms

2500Vrms

2500Vrms

2500Vrms

Insulation structure

Insulation sheet

Insulation sheet

Insulation sheet

Insulation sheet

Insulation sheet

RoHS directive＊2

CompliantCompliantCompliantCompliantCompliant

ー

ー

ー

ー

Pin type[Notes] ＊1: PSS**NC1FT is not included brake＊2: RoHS directive (2011/65/EU and (EU) 2015/863)[Term]ー★: New Product

CSTBTTM: Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative eﬀect
UV: Supply Under Voltage protection
OT: Over Temperature protection
SC: Short Circuit protection
VOT: Analog Temperature Output
RoHS: Restriction of the use of certain Hazardous Substances in electrical and electronic equipment
CIB: Converter Inverter Brake
CI: Converter Inverter■Type Name Definition of DIPIPM

PS
Options
Voltage
class

Function
SeriesPackage

Circuitconstruction
Rated
current
Chip type
DIPIPM16

Lineup of DIPIPM™
■ Outline Drawing of DIPIPM

SLIMDIP
Short

Type Name LotNo.

18.8

18.8

SLIMDIP
NormalUnit :mm

32.8

Super mini DIPIPM Ver.6
Long

Super mini DIPIPM Ver.7
Long

3.6
Type Name LotNo.

24

24

3.6

32.8

Type Name LotNo.

38

Mini DIPIPM (PSSxxS51F6)

Mini DIPIPM(PSSxxS51F6)
Control side of Zigzag

Type Name Lot No.

Type Name Lot No.
31

30.5

30.5

Type Name Lot No.

49

5

49

5

Mini DIPIPM (PSSxxS7xF6)1200V Mini DIPIPM Ver.7
1200V Mini DIPIPM

52.5

5.6

3.5

3.5

38

17

Type Name LotNo.

Lineup of DIPIPM™
■ Outline Drawing of DIPIPM

DIPIPM+Type Name Lot No.

43

Type Name Lot No.

Type Name Lot No.

79

85

114.5

7

5.7

8

Large DIPIPM+

34

31

Large DIPIPM

Unit: mm

18

IPM
Series, Main Application

Data sheet
here

Main Application

SeriesG1

Motion control/Renewable energy/Power supply

V1

Rated Lineup
Rated current
25A

35A

50A

75A

100A

150A

200A 300A 400A 450A 500A 600A 800A

600V
Rated

voltage

650V

1200V

Featured Products
Loaded with built-in functions, contributing to
inverters with enhanced energy savings
G1 Series IPM with 7th-generation IGBT
<Main Features>
・Power loss has been reduced with the introduction of the 7th-generation IGBT produced using CSTBTTM*1 and a diode incorporating a RFC*2 structurethat contributes to reducing the power consumed in inverters
・The new resin-insulated metal baseplate, originally introduced in 7th-generation IGBT modules, eliminates the solder-attached section, increasing thethermal cycle lifetime and improving inverter reliability
・In addition to the built-in functions of the previous product,*3 automatic switching speed control, and error detection function contribute to lowering
inverter loss and shortening design time
*1 CSTBT: Mitsubishi Electric’s unique IGBT that utilizes the carrier cumulative effect*2 RFC: Relaxed field cathode*3 Conventional product: IPM L1-Series

Built-in functions: Supply Undervoltage lock protection (UV)、Short-circuit protection (SC), Over-temperature protection (OT)

■ "A" package main pin shape and layout
For the "A" package 6-in-1 (CG1A) main pin shape, select either solder pin or screw type
For the pin layout, select either straight or L-shaped
Main pin shape

Main pin layout
B or NCP

Main pin: Solder pin

19

Main pin: Screw

N

U

V W

Straight

N
P

NC

U

V W

L-shapedLineup of IPM■ Matrix of IPM 650V/600V (No.: Number of outline drawing, see page 22)
650V

VCES
Series

G1 Series

Connection

No.

50A

PM50CG1A065
PM50RG1A065
PM50CG1B065
PM50RG1B065
PM50CG1AL065
PM50CG1AP065
PM50CG1APL065
PM50RG1AP065

C
R
C
R
C
C
C
R

06
06
04
04
06
03
03
03

75A

PM75CG1A065
PM75RG1A065
PM75CG1B065
PM75RG1B065
PM75CG1AL065
PM75CG1AP065
PM75CG1APL065
PM75RG1AP065

C
R
C
R
C
C
C
R

06
06
04
04
06
03
03
03

100A

PM100CG1A065
PM100CG1B065
PM100RG1B065
PM100CG1AL065
PM100CG1AP065
PM100CG1APL065

C
C
R
C
C
C

06
04
04
06
03
03

150A

PM150CG1B065
PM150RG1B065

C
R

04
04

200A

PM200CG1B065
PM200RG1B065
PM200CG1C065
PM200RG1C065

C
R
C
R

04
04
05
05

300A

PM300CG1C065
PM300RG1C065

C
R

05
05

PM450CG1C065
PM450RG1C065

C
R

05
05

IC

V1 Series

400A
450A
600A
800A

ConnectionNo.

PM400DV1A060

D

01

PM600DV1A060
PM800DV1B060

D
D

01
02

CSTBT＊1
Built-in emitter sensor
Built-in temperature sensor

CSTBT＊1
Built-in emitter sensor
Built-in temperature sensor

UV
Fault OT
output SC

Ｐ-side/Ｎ-side

P-side/N-side

Ｐ-side/Ｎ-side

P-side/N-side

Ｐ-side/Ｎ-side

P-side/N-side

Identiﬁcation

Ｐ-side/Ｎ-side−

RoHS directive＊2

CompliantCompliant

IGBT
chip

−

Compatibility
D

B4

V Series
B5

C

R

Connection[Notes] ＊1: Full-gate CSTBT™
＊2: RoHS directive (2011/65/EU and (EU) 2015/863)[Term]CSTBT™: Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative eﬀect
UV: Power supply Under Voltage protection
SC: Short Circuit protection
OT: Over Temperature protection
RoHS: Restriction of hazardous substances in electrical and electronic equipment

20Lineup of IPM■ Matrix of IPM 1200V (No.: Number of outline drawing, see page 22)
1200V

VCES
Series

V1 Series

ConnectionNo.

PM200DV1A120

D

01

300A

PM300DV1A120

D

01

450A

PM450DV1A120

D

01

IC

25A

35A

50A

75A

100A

150A

200A

IGBT
chip
UV
Fault OT
outputSC

G1 Series

Connection

No.

PM25CG1A120

C

06

PM25CG1B120

C

04

PM25RG1A120

R

06

PM25RG1B120

R

04

PM25CG1AL120

C

06

PM25CG1AP120

C

03

PM25CG1APL120

C

03

PM25RG1AP120

R

03

PM35CG1A120

C

06

PM35CG1B120

C

04

PM35RG1A120

R

06

PM35RG1B120

R

04

PM35CG1AL120

C

06

PM35CG1AP120

C

03

PM35CG1APL120

C

03

PM35RG1AP120

R

03

PM50CG1A120

C

06

PM50CG1B120

C

04

PM50RG1B120

R

04

PM50CG1AL120

C

06

PM50CG1AP120

C

03

PM50CG1APL120

C

03

PM75CG1B120

C

04

PM75RG1B120

R

04

PM100CG1B120

C

04PM100CG1C120

C

05

PM100RG1B120

R

04

PM100RG1C120

R

05

PM150CG1C120

C

05

PM150RG1C120

R

05

PM200CG1C120

C

05

PM200RG1C120

R

05

CSTBT＊1
Built-in current sensor
Built-in temperature sensor

CSTBT＊1
Built-in current sensor
Built-in temperature sensor

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

P-side/N-side

Identiﬁcation

P-side/N-side−

RoHS directive＊2

CompliantCompliantCompatibility−

V Series

D

C

R

Connection[Notes] ＊1: Full-gate CSTBT™
＊2: RoHS directive (2011/65/EU and (EU) 2015/863)[Term] CSTBT™: Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative eﬀect
UV: Power supply Under Voltage protection
SC: Short Circuit protection
OT: Over Temperature protection
RoHS：Restriction of the use of certain Hazardous Substances in electrical and electronic equipment

21Lineup of IPM■ Outline Drawing of IPM

01

PM400,600DV1A060
PM200,300,450DV1A120

Unit: mm02

PM800DV1B060

03

120
120

90

17

34
PM50,75,100,150,200CG1B/
RG1B065
PM25,35,50,75,100CG1B/
RG1B12005

PM200,300,450CG1C/
RG1C065
PM100,150,200CG1C/
RG1C12006

120

PM50,75,100CG1A/CG1AL065
PM50,75RG1A065
PM25,35,50CG1A/CG1AL120
PM25,35RG1A120

50
22

22

85

90

24

120

55

50

90

70
29

04

PM50,75,100CG1AP/CG1APL065
PM50,75RG1AP065
PM25,35,50CG1AP/CG1APL120
PM25,35RG1AP120

22

IGBT Modules
Series, Main Application
Main Application

SeriesData sheet
here

T
T1
Motion control/Renewable energy /Power supply

ＴＨ
For 3-level Inverters
S

Rated Lineup
Rated current
35A

50A

75A

100A 150A 200A 225A 300A 400A 450A 500A 600A 800A 900A 1000A 1200A 1400A

650V

Rated

1200V

voltage
1700V

2000V

New Products
Industrial IGBT module with new standard
package "LV100" for high power density inverter
IGBT module T-series (LV100 for industrial)
IGBT module 2in1 type■Lineup
1200A/2000V
800A/1700V, 800A/1700V(with enhanced FWD), 1200A/1700V
800A/1200V, 1200A/1200V〈Main Features〉
・Next generation high capacity standard package for industrial use
・Improved ease of use by applying low impedance package
・Reducing the switching loss and optimal for the applications that are used in 1 to 5KHz
・Isolation voltage 4kV

C1

Cs1
Tr1

Di1

G1
Es1

C2E1

Tr2

Di2

G2
Es2
Thermistor
E2

23

IGBT Modules

Featured Products
New lineup contributes to simple design
downsizing, energy-savings of industrial inverters.
IGBT Module T/T1-Series<Main Features>・New modules equipped with three-phase converter,
inverter, and brake circuit(CIB), contributes to simplifying
design for inverter systems
・CIB modules contribute to compact inverter systems by
reducing package size by 36% compared to the Mitsubishi
Electric's existing module.(CIB)• Power loss has been reduced with the introduction of the
7th-generation IGBT produced using CSTBT*2 and a diode
incorporating a relaxed field of cathode (RFC) structure• The new structure introduced eliminates thesolder-attached section, increasing the thermal cycle
lifetime, which contributes to improving the reliability of
inverters• The introduction of press-fit pins and PC-TIM*1 contribute tosimplifying the assembly process for inverters■ New structure realizes improved reliability(improved thermal cycle lifetime)
NX package structure comparison
6th-generation IGBT
Wire

Compared to standard (std) package structure
6th-generation IGBT

Chip

Silicone gel

Wire

Chip

Ceramic insulation board

Ceramic insulation board

SolderBase plate

Base plate

7th-generation IGBTResin

*1 PC-TIM: Phase change - thermal interface material*2 CSTBT：Mitsubishi Electric’s unique IGBT that makes
use of the carrier cumulative effect

Solder

7th-generation IGBT
Added pattern thickness

Chip Wire

Chip Wire◆ Press-fit terminal support (NX)
• Possible to select thecontrol pin shape(solderedterminals/press-fit
terminals)• Solder attachment process
eliminated■Press-fit pin
Ultra sonic bonding
adoptedResin insulated metal baseplate※Adopts SoLid Cover(SLC) Technology①Main pin

Thick metal substrate(TMS)※Standard package is not available for CIB②Signal pin

Featured Products
Low switching loss contributes to efficiency improvementof industrial inverters during high-frequency operation.
TH-series IGBT Modules with 7th-generation IGBT
for High-frequency switching applications<Main Features>
・A chip optimized for high-frequency applications fc target
20-60kHz・High-speed specifications reduce power consumption
during high-frequency switching.The loss is reduced byabout 30% compared to general specifications*1
・Lineup of 1200V 200A to 600A (2 types of packages areavailable for 400A)*1: 7th-generation T series with general specifications■ Package

48 x 94mm
1200V/200A
・CM200DY-24TH■ Product lineup
CM200DY-24TH

80 x 110mm
1200V/400A,600A
・CM400DU-24TH
・CM600DU-24TH

Rated
Current

Connection

200A

CM400DY-24TH

1200V

CM400DU-24TH
CM600DU-24TH

400A

External size
(DxW)
48.0 x 94.0mm

2 in 1600A

62.0 x 108.0mm
80.0 x 110.0mm■ Power loss comparison

Note: Example properties of TH-series IGBT(fc=30kHz)

Approx.
Turn-off
power
loss

62 x 108mm
1200V/400A
・CM400DY-24TH

Rated
VoltageType name

Reduced byadjusting thetarget trade-off

Turn-onpower
loss

Reduced by adjusting
the chip capacitanceand built-in Rg

DC loss

Increased by adjusting
the target trade-off

general specifications
7th-generation T-series

30%

reduction

High-speed specifications
7th-generation TH-series24Lineup of IGBT Modules■ Matrix of IGBT Modules 650V/600V (No.: Number of outline drawing, see page 28 to 32)
VCES
SeriesIC

RoHS directive (2011/65/EU, (EU)2015/863) compliant

650V
T/T1-Series
NX Type

Connection

600V
T-Series
std Type

No.

NFH-SeriesNo.

Connection

No.

Connection

50A

CM50MXUB-13T
CM50MXUB-13T1
CM50MXUBP-13T
CM50MXUBP-13T1

M
M
M
M

32
32
36
36

75A

CM75MXUB-13T
CM75MXUB-13T1
CM75MXUBP-13T
CM75MXUBP-13T1

M
M
M
M

32
32
36
36

100A

CM100TX-13T
CM100TXP-13T
CM100MXUB-13T
CM100MXUB-13T1
CM100MXUBP-13T
CM100MXUBP-13T1
CM100MXUD-13T
CM100MXUD-13T1
CM100MXUDP-13T
CM100MXUDP-13T1

T
T
M
M
M
M
M
M
M
M

24
27
32
32
36
36
34
34
38
38

CM100DY-13T

D

19

150A

CM150TX-13T
CM150TXP-13T
CM150RX-13T
CM150RXP-13T
CM150MXUD-13T
CM150MXUD-13T1
CM150MXUDP-13T
CM150MXUDP-13T1

T
T
R
R
M
M
M
M

24
27
25
28
34
34
38
38

CM150DY-13T

D

19

200A

CM200TX-13T
CM200TXP-13T
CM200RX-13T
CM200RXP-13T

T
T
R
R

24
27
25
28

CM200DY-13T

D

19

CM200DU-12NFH

D

11

300A

CM300DX-13T
CM300DXP-13T

D
D

17
29

CM300DY-13T

D

20

CM300DU-12NFH

D

12CM400DY-13T

D

20

CM400DU-12NFH

D

12

450A

CM450DX-13T
CM450DXP-13T

D
D

17
29

600A

CM600DX-13T
CM600DXP-13T

D
D

17
29

CM600DY-13T

D

21

CM600DU-12NFH

D

13

400A

D

T

R

M

Connection■ Matrix of Power Modules for 3-level Inverter (No.: Number of outline drawing, see page 28 to 32)
VCES/VRRM

RoHS directive (2011/65/EU, (EU)2015/863) compliant

1200 V IGBT Module

1700 V IGBT Module

1200 V Diode Module

1700 V Diode Module

I C/I F

T/S-Series
std Type

S-Series
std Type

S-Series
std Type

S-Series
std Type

200A

Connection No.

★

CM200ST-24T

S

40

CM400ST-24T★

S

40

CM400C1Y-24S

C1

09

450A

CM450C1Y-24T

C1

21

500A

CM500C2Y-24S

C2

2６

600A

CM600C1Y-24T

C1

21

400A

Connection No.

Connection No.

Connection No.

CM600HA-34S

H

26

RM600DY-34S

D

22

800A

CM800HA-34S

H

26

RM800DY-34S

D

22

1000A

CM1000HA-34S

H

26

1400A

CM1400HA-24S
IGBT module

H
C1

26
C2

RM1400HA-24S
H

S

H

26

Diode module

H

D

Connection

25＊Connection of diode module and IGBT module are different.

★: New productLineup of IGBT Modules■ Matrix of IGBT Modules 1200V (No.: Number of Outline Drawing, see page 28 to 32)

RoHS directive (2011/65/EU, (EU)2015/863) compliant

VCES
1200V
Series T-Series LV100 Type T/T1-Series NX Type T-Series std Type
TH-Series
S-Series NX TypeS-Series std TypeS-Series MPD TypeIC
Connection No.
Connection No.
Connection No.
Connection No.
Connection No.
Connection No.
Connection No.
35A

CM35MXUA-24T M 31
CM35MXUA-24T1 M 31
CM35MXUAP-24T M 35
CM35MXUAP-24T1 M 35

CM35MXA-24S M 03

50A

CM50MXUA-24T M 31
CM50MXUA-24T1 M 31
CM50MXUAP-24T M 35
CM50MXUAP-24T1 M 35

CM50MXA-24S M 03

75A

CM75MXUB-24T M 32
CM75MXUB-24T1 M 32
CM75MXUBP-24T M 36
CM75MXUBP-24T1 M 36
CM75MXUC-24T M 33
CM75MXUC-24T1 M 33
CM75MXUCP-24T M 37
CM75MXUCP-24T1 M 37

CM75TX-24S
T 04
CM75RX-24S R 01
CM75MXA-24S M 03

100A

CM100TX-24T
T 24
CM100TXP-24T
T 27
CM100RX-24T
R 25
CM100RXP-24T
R 28
CM100DY-24T D 19
CM100MXUC-24T M 33
CM100MXUC-24T1 M 33
CM100MXUCP-24T M 37
CM100MXUCP-24T1 M 37

CM100MXA-24S M 03

150A

CM150TX-24T
T 24
CM150TXP-24T
T 27
CM150RX-24T
R 25
CM150RXP-24T
R 28
CM150DY-24T D 19
CM150MXUD-24T M 34
CM150MXUD-24T1 M 34
CM150MXUDP-24T M 38
CM150MXUDP-24T1 M 38

CM150DX-24S D 02
CM150EXS-24S E 16200A

CM200DX-24S D 02
CM200TX-24T T 24
CM200DY-24T D 20 CM200DY-24TH D 06 CM200RXL-24S R 15
CM200TXP-24T T 27
CM200EXS-24S E 16

225A

CM225DX-24T D 17
CM225DX-24T1 D 17
CM225DXP-24T D 29
CM225DXP-24T1 D 29300ACM300DX-24T D 17
CM300DX-24T1 D 17
CM300DY-24T D 20
CM300DXP-24T D 29
CM300DXP-24T1 D 29

CM300EXS-24S E 16 CM300DY-24S

D 07

CM400DY-24TH D 08
CM400DU-24TH D 13

400A

450A

CM450DX-24T
D 17
CM450DX-24T1 D 17
CM450DY-24T D 21
CM450DXP-24T D 29
CM450DXP-24T1 D 29

CM450DY-24S

D 09

600A

CM600DX-24T D 17
CM600DX-24T1 D 17
CM600DY-24T D 21 CM600DU-24TH D 13 CM600DXL-24S D 05 CM600DY-24S
CM600DXP-24T D 29
CM600DXP-24T1 D 29

D 09

CM800DX-24T1 D 17
CM800DXP-24T1 D 29

D 10

800A

CM800DW-24T D 39

CM800DY-24S

CM900DUC-24S

D 14

CM1400HA-24S H 26 CM1400DUC-24S

D 14

900A
CM1000DX-24T D 18
CM1000DXP-24T D 30

1000A

CM1000DXL-24S D 05

1200A CM1200DW-24T D 39
1400A
H

D

T

R

M

E

E3

Connection＊1: A-Series have model namse ending with A, NF-Series have model name ending with NF/NFH＊2: std Type have model name "CM**DY/HA-24S, MPD Type have model name "CM**DUC-24S"

26

Lineup of IGBT Modules■ Matrix of IGBT Modules 1700V (No.: Number of Outline Drawing, see page 28 to 32)
VCES
SeriesIC

RoHS directive (2011/65/EU, (EU)2015/863) compliant

1700V
T-Series
LV100 Type

Connection

T-Series
NX TypeNo.

Connection

No.

75A

T-Series
std Type

ConnectionNo.

CM75DY-34T

D

19

100A

CM100TX-34T
CM100TXP-34T

T
T

24
27

CM100DY-34T

D

19

150A

CM150TX-34T
CM150TXP-34T

T
T

24
27

CM150DY-34T

D

20

CM200DY-34T

D

20

CM300DY-34T

D

21

CM400DY-34T

D

21

200A
225A

CM225DX-34T
CM225DXP-34T

D
D

17
29

300A

CM300DX-34T
CM300DXP-34T

D
D

17
29

400A
450A

CM450DX-34T
CM450DXP-34T

D
D

17
29

CM600DX-34T
CM600DXP-34T

D
D

17
29

S-Series
std Type

Connection

No.

CM600HA-34S

H

26

CM800HA-34S

H

26

CM1000HA-34S

H

26

500A
600A
800A

CM800DW-34T
CM800DW-34TA

D
D

39
39

1000A
1200A

CM1200DW-34T

D

H

D

39
T

R

M

Connection■ Matrix of IGBT Modules 2000V (No.: Number of Outline Drawing, see page 28 to 32)
RoHS directive (2011/65/EU, (EU)2015/863) compliant
VCES
SeriesIC

2000V
T-Series
LV100 Type

Connection

No.

Connection

No.

200A

CM200DY-40TA

D

21

400A

CM400DY-40T
CM400DY-40TA

D
D

23
21

1200A

CM1200DW-40T

D

39
D

Connection

27

T-Series
std TypeELineup of IGBT Modules■ Outline Drawing of IGBT Modules

01

Unit: mm02

CM75RX-24S

CM150,200DX-24S

03

CM35,50,75,100MXA-24S

136.9
121.7

04

17

05

CM75TX-24S

62

62
17

17

77.1

152

CM600,1000DXL-24S

06

CM200DY-24TH

152
94

17

17

29

62

121.7

48

121.7

08

09

62

62
30

CM400C1Y-24S
CM450DY-24S
CM600DY-24S

110

108

30

108

CM400DY-24TH

80

CM300DY-24S

29

07

28

Lineup of IGBT Modules■ Outline Drawing of IGBT Modules

10

CM800DY-24S

Unit: mm11

CM200DU-12NFH

12CM300,400DU-12NFH

130
108

35

29

30

140

48

62

94

13

CM600DU-12NFH
CM400,600DU-24TH

14

CM900,1400DUC-24S

15

CM200RXL-24S

150
136.8

16

CM150EXS-24S
CM200EXS-24S
CM300EXS-24S

17

17

36.6

29

136.9

166

80

110

CM300,450,600DX-13T
CM225,300,450,600DX-24T
CM225,300,450,600,800DX-24T1
CM225,300,450DX,600DX-34T

18

104

137

110

62

17

17

17

62

152

29

CM1000DX-24T

Lineup of IGBT Modules■ Outline Drawing of IGBT Modules

20

CM100,150,200DY-13T
CM100,150DY-24T
CM75,100DY-34T

21

30

62

48

34
30.1

23

RM600,800DY-34S

CM600DY-13T
CM450,600DY-24T
CM450,600C1Y-24T
CM300,400DY-34T
CM200DY-40TA
CM400DY-40TA

108

94

94

22

CM300,400DY-13T
CM200,300DY-24T
CM150,200DY-34T

30

19

Unit: mm

CM400DY-40T

24

110

CM100,150,200TX-13T
CM100,150,200TX-24T
CM100,150TX-34T

122

26

CM150,200RX-13T
CM100,150RX-24T

CM500C2Y-24S
CM1400HA-24S
CM600,800,1000HA-34S
RM1400HA-24S

27

CM100,150,200TXP-13T
CM100,150,200TXP-24T
CM100,150TXP-34T

137
130

77.1

67

62

30

17

122

17

25

29

30

17

62

80

62

108

30

Lineup of IGBT Modules■ Outline Drawing of IGBT Modules

28

CM150,200RXP-13T
CM100,150RXP-24T

Unit: mm29

CM300,450,600DXP-13T
CM225,300,450,600DXP-24T
CM225,300,450,600,800DXP-24T1
CM225,300,450,600DXP-34T

30

CM1000DXP-24T

137

137

CM35,50MXUA-24T/24T1

32

CM100/150MXUD-13T/T1
CM150MXUD-24T/T1

35

31

110

122

CM35/50MXUAP-24T/T1

36

107.5

CM50/75/100MXUBP-13T/T1
CM75MXUBP-24T/T1

45

45
17

107.5

17

17

62

122

CM75,100MXUC-24T/24T1

62

17

17

34

33

107.5

45

45

107.5

CM50,75,100MXUB-13T/13T1
CM75MXUB-24T/24T1

17

31

17

17

17

62

77.1

152

Lineup of IGBT Modules■ Outline Drawing of IGBT Modules

37

CM75/100MXUCP-24T/T1

Unit: mm38

CM100/150MXUDP-13T/T1
CM150MXUDP-24T/T1

39

CM800,1200DW-24T
CM800,1200DW-34T
CM800DW-34TA
CM1200DW-40T
100

62

62

40

17

17

140

122

122

CM200,400ST-24T

115

40

82

32.4

32

HVIGBT Modules
Package, Main Application
Main Application

SeriesData sheet
here

X
R
Traction/Power transmission/Motion control

S
N
H

Rated Lineup
Rated current
200A

400A

450A

600A

800A

900A 1000A 1200A 1350A 1500A 1600A 1800A 2400A

1700V
Rated

voltage

3300V
4500V
6500V

New Products
X Series HVIGBT Modules std type

Existing compatible package: standard type contributes to smaller,higher-capacity inverter systems by expanding lineup<Main Features>
・Power loss reduced by incorporating 7th-generation IGBT and RFC*1 diode・Compared to the existing CM900HC-90H and CM1350HC-90X, the newmodels’ rated output currents are 50% greater but external dimensions are
the same.
・Compared to existing CM900HC-90H, new CM900HC-90X, etc. are 33%
smaller but achieve the same voltage and current ratings.
・Optimal package internal structure realizes improved heat dissipation,
humidity resistance and flame retardance, increasing product life*1

■ Product lineup
std type

1.7kV

3.3kV

4.5kV

6.5kV

2400A

1200A

900A
1000A

600A

2400A

1200A
1800A

900A
1350A
1500A

600A
900A
1000A

HV100

3.3kV

4.5kV

450A
600A

450A

RFC : Relaxed ﬁeld of cathodeX Series HVIGBT Modules dual typeNew common frame package: dual type class-leading current
density contributes to increased power output in inverter systems<Main Features>
・Power loss reduced by incorporating 7th-generation IGBT and RFC *1 diode・Industry's highest 3.3kV/600A Si module power density of 8.57A/cm2 *2
contributes to increased power output and eﬃciency
・Terminal layout optimized for easy paralleling and ﬂexible inverter
conﬁgurations and capacities
・New package structure oﬀers extra reliability*233

As of Dec. 17, 2020 based on Mitsubishi Electric research■ Product lineup
LV100

1.7kV

3.3kV

1200A

450A
600A

Lineup of HVIGBT Modules■ Series Matrix of HVIGBT (No.: Number of Outline Drawing, see page 36)
VCES
IC

X-Series
Connection Type No.

1700V
S-Series
N-Series

Connection Type No.

3300V
H-Series

X-Series

Connection Type No.

R-Series

Connection Type No.

H-Series

Connection Type No.

CM400HG-66H H G ‑CM400DY-66H D1 B1 06

400A

450A

CM450DA-66X D2 A 07
CM450DE-66X D2 E 08
CM400HG-66X★★ H G 09

600A

D2 A 07
CM600DY-34H D1 B2 01 CM600DA-66X
D2 E 08
CM600E2Y-34H E2 B2 01 CM600DE-66X
CM600E1A-66X E1 A 07

800A

CM800DZB-34N D1 C2

CM800HC-66H H C1 ‑
CM800E4C-66H E4 C1 ‑
CM800E6C-66H E2 C1 ‑

CM800DZ-34H D1 C2 ‑CM1000HC-66R H C1 ‑CM1000E4C-66R E4 C1 ‑

1000A

1200A

CM1200HCB-34N H C2
CM1200DC-34N D1 C2CM1200DA-34X D2 A 07 CM1200E4C-34N E4 C2
CM1200DC-34S D1 C2‑‑CM1200HC-66X
H C1 02‑ CM1200HC-34H H C2 ‑ CM1200HCB-66X H C1 03★★
‑
CM1200E4C-66X E4 C1 03
CMH1200DC-34S D1 C2 01

1500A

CM1200HC-66H H C1 ‑
CM1200HG-66H H C1 ‑

CM1500HC-66R H C1 ‑

1600A

CM1600HC-34H H C2 ‑1800A

CM1800HC-66X
CM1800HC-34N H C2 ‑ CM1800HC-34H
C1 03
H C2 ‑ CM1800HG-66X H
CM1800HCB-34N H C2 ‑H G 04

2400A

Connection Type No.

CM2400HC-34X H C1 02 CM2400HC-34N H C2 ‑CM2400HCB-34X H C1 03 CM2400HCB-34N H C2 ‑ CM2400HC-34H H C2 03
H

E1

E2/E6

E4

D1

D2

Connection★★: Under development
The outline drawing is written the figure of principal part numbers that have a common dimension.
Non-recommended : Please contact to the sales offices.

[Type]
A：Al base plate 6kV Isolation
B1:Cu base plate / 6kV Isolation
B2:Cu base plate / 4kV Isolation
C1:AlSiC base plate / 6kV Isolation
C2:AlSiC base plate / 4kV Isolation
G：AlSiC base plate 10kV Isolation
E：Al base plate 10kV Isolation■Type Name Definition■ Evolution of HVIGBT Module Series
1.7kV

2.5kV

H Series

N Series

S Series

X Series

std type

std type

std type

std type
dual type

H Seriesof IGBT Modules

CM 1800 H C -66 X
Series namestd type

3.3kV
4.5kV
6.5kV

H Series

R Series

X Series

std type

std type

std type
dual type

Voltage class

Outline drawing
and other specifications
Connection type
Rating current
CM: IGBT, RM: DIODE, PM: IPM

34

Lineup of HVIGBT Modules■ Series Matrix of HVIGBT (No.: Number of Outline Drawing, see page 36)
VCES
IC

4500V
X-Series

6500V

R-Series
Connection Type No.

H-Series
Connection Type No.

X-Series
Connection Type No.

H-Series
Connection Type No.

Connection Type No.

200A

CM200HG-130H Ｈ

G

‑

400A

CM400HG-130H Ｈ G
CM400E2G-130H E2 G
CM400E4G-130H E4 G

‑
‑
‑

450A

CM450DE-90X★ D2 E

08

600A
CM800HC-90R H
CM800HG-90R H

800A

900A

CM900HC-90X H C1 02
CM900HG-90X H G 05
CM900E2G-90X E2 G 04

1000A

CM1000HG-90X H

CM600HG-90H H

G 05 CM600HG-130X H

G 05 CM600HG-130H H

CM900HC-90H H
CM900HG-90H H

C1 ‑
G ‑

CM900HG-130X H

G 04

CM1000HG-130XA H

G 04

CM1200HC-90RA H
CM1200HG-90R H

1350A

CM1350HC-90X H C1 03
CM1350HG-90X H G 04

1500A

CM1500HC-90XA H C1 03
CM1500HG-90X H G 04
H

‑

C1 02
G 05

G 05

1200A

G

C1 ‑
G ‑

E2

E4

D2

Connection[Type]
A：Al base plate 6kV Isolation
B1:Cu base plate / 6kV Isolation
B2:Cu base plate / 4kV Isolation
C1:AlSiC base plate / 6kV Isolation
C2:AlSiC base plate / 4kV Isolation
G：AlSiC base plate 10kV Isolation
E：Al base plate 10kV Isolation

35★: New product
The outline drawing is written the figure of principal part numbers that have a common dimension.
Non-recommended : Please contact to the sales offices.

Lineup of HVIGBT Modules■ Outline Drawing of HVIGBT Modules

02

CM2400HC-34X
CM1200HC-66X
CM900HC-90X
etc.

130

140

140

38

CM1800HG-66X, CM900E2G-90X
CM1350HG-90X, CM1500HG-90X
CM900HG-130X, CM1000HG-130XA
etc.

CM2400HCB-34X, CM1200HCB-66X,
CM1800HC-66X, CM1350HC-90X,
CM1500HC-90XA
etc.
190

130

38

04

03

140

CMH1200DC-34S
CM600DY/E2Y-34H

38

01

Unit: mm05

CM900, 1000HG-90X
CM800HG-90R
CM600HG-90H/130X

06

CM400DY-66H

130

130

140
CM450DE-66X, CM600DE-66X
CM450DE-90X

09

CM400HG-66X
73

100

140

140

40

40

100

140

08

38

48
CM1200DA-34X
CM450DA-66X, CM600DA-66X,
CM600E1A-66X

48

140
48

07

140

190

36

HVDIODE Modules
Data sheet
here

Series, Main Application
Main Application

SeriesTraction/Power transmission/Motion control

HVDIODE Modules

Rated Lineup
Rated current
300A

400A

450A

600A

750A

800A

900A 1000A 1200A 1500A 1800A

1700V
3300V

Rated

voltage

4500V
6500V

■ Series Matrix of HVDIODE Modules (No.: Number of outline drawing, see page 38)
VPRM
IF

1700V

3300V

Connection Type No.

Connection Type No.

4500V

Connection Type No.

300A
RM400DG-66S
RM400DY-66S

400A

D
D

G
B

RM450DG-90X

D

G 10

B

‑

RM600DG-130S

D

G 10

RM600DG-130X

D

G 10

RM1000DG-130XA

D

G 10

D

C 11
G 10

900A

RM900HC-90S
RM900DB-90S

H
D

C ‑
B 11

RM900DG-90X

D

G 10

‑

1500A
1800A

RM1800HE-34S

H

C

G 10

C 11

D

B

D

D

RM800DG-90F

D

RM450DG-130X

D

800A

RM1200DB-34S

G 10

RM600DC-66X

RM750DC-90X★★

1200A

D

RM600DY-66S

750A

1000A

Connection Type No.

RM300DG-130X
‑
‑

450A
600A

6500V

RM1000DC-66F

D

C

‑

RM1200DG-66S
RM1200HE-66S
RM1200DB-66S

D
H
D

G
C
B

‑
‑
‑

RM1200DC-66X
RM1200DG-66X

D
D

C 11
G 10

RM1500HE-66F
RM1500DC-66F

H
D

C
C

‑
‑

RM1200DG-90F

D

G 10

RM1500DG-90X

D

G 10

‑
H

Connection[Type]

Ｄ★★: Under development
The outline drawing is written the figure of principal part numbers that have a common dimension.
Non-recommended : Please contact to the sales offices.

B：Cu base plate 6kV Isolation
C：AlSiC base plate 6kV Isolation
G：AlSiC base plate 10kV Isolation■Type Name Definition■ Evolution of HVDIODE Module Series
1.7kV

S Series

X Series

3.3kV
4.5kV
6.5kV

S Series

F Seriesof IGBT Modules
X Series

RM 1200 D G -66 X
Series nameVoltage class

Outline drawing
and other specifications
Connection type
Rating current
CM: IGBT, RM: DIODE, PM: IPM

37

Lineup of HVDIODE Modules■ Outline Drawing of HVDIODE Modules

RM600DC-66X, RM1200DC-66X
RM750DC-90X
RM1000/1500DC-66F
RM400/600DY-66S
RM1200DB-66S, RM900DB-90S

130

140

11

38

140

RM1200DG-66X
RM450/900/1500DG-90X
RM300/450/600DG-130X
RM1000DG-130XA
etc.
130

48

10

Unit :mm

38

Lineup of MOSFET Modules■ Series Matrix of MOSFET Modules
RoHS directive (2011/65/EU, (EU)2015/863) compliant
VDSS
ID

75V

Connection

100V

Connection

150V

FM200TU-07A

T

FM200TU-2A

T

FM200TU-3A

T

200A

FM400TU-07A

T

FM400TU-2A

T

FM400TU-3A

T

300A

FM600TU-07A

T

FM600TU-2A

T

FM600TU-3A

T

T
Connection■ Outline Drawing of MOSFET Modules
Unit: mm

FM200TU-07A, -2A, -3A
FM400TU-07A, -2A, -3A
FM600TU-07A, -2A, -3A

26

90

110

39

Connection

100A

Data sheet
herePower Modules for xEVSeries, Main Application
SeriesMain Application

J1

xEV

Rated Lineup
Rated current
600A
Rated

voltage

700A

650V

* 700A product has an optional specification with an insert nut embedded in the board mounting boss. Please contact us if necessary.

Featured Products
Package with 6-in-1 connection and integrated
water-cooled fin contributes to more compact,
high-power
J1 Series power Modules for xEV■ Block Diagram
J1 SeriesP

CT600C1A060-A, CT700CJ1A060-A<Main Features>
・Integrated direct water-cooling structure with cooling fins and 6-in-1
connection contribute to more compact inverters for xEV・Direct lead bonding (DLB) structure ensures high reliability
・Loss further reduced by incorporating 7th-generation IGBT built with a
CSTBTTM* structure
・On-chip current sensor that enables high-speed current-cutoff
protection is installed
・Completely lead-free, confirms to RoHS directive (2011/65/EU)
・Suitable for a variety of electric and hybrid vehicle inverters

PV
UPG
UPA
UPS
UPE

UNG
UNA
UNS
UNE

U

VPG
VPA
VPS
VPE

WPG
WPA
WPS
WPE
V

VNG
VNA

WNG
WNA

VNS
VNE

W

WNS
WNE
N

*CSTBT: Mitsubishi Electric's unique IGBT that utillizes the carrier cumulative effect.

■ Features

Common・Long power/temperature cycle life
・High-precision on-chip temperrature sensor
・High traceability in managing materials/components for eachproduct throughout the entire production process
・Package structure compliant with the End-of-Life-Vehicles
Directive, regulations relating to substances of enviromental
concern40

Power Modules for xEV■ Matrix of 650V Power Modules
650V
J1 Series
Power Module with pin fin

Connection

No.

600A

CT600CJ1A060-A

C

01

700A

CT700CJ1A060-A

C

01

VCES
IC

SeriesC
Connection* 700A product has an optional specification with an insert nut embedded in the board mounting boss. Please contact us if necessary.

■Type Name Definition of Power Modules for xEV

CT 600 C J1A 060
Voltage class
Series name andstructure
Connection type
Rating current class
CT: IGBT■ Outline Drawing of Power Modules for xEV
Unit : mm

01

CT600CJ1A060-A
CT700CJ1A060-A

120
P

115.7

UPG
UPE
UPS
UPA

VPG
VPE
VPS
VPA

V
WPG
WPE
WPS
WPA

32.5

W

41

N

PV

U

UNA
UNS
UNE
UNG
VNA
VNS
VNE
VNG
WNA
WNS
WNE
WNG

MEMO

42

POWER DEVICES

Mitsubishi Electric Power Devices Website

https://www.mitsubishielectric.com/semiconductors/powerdevices/

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• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead topersonal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammablematerial or (iii) prevention against any malfunction or mishap.

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Revised publication, effective Apr. 2024.
Superseding publication of H-CT575-K Oct. 2023.
Specifications subject to change without notice.
H-CT575-L FU-2404 Printed in Japan <IP>

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