RS8801

Single-Channel High-Speed Low-Side Gate Driver with
Negative Input Voltage Capability (with 5A Peak Sourceand Sink)
1 FEATURES
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Low-Cost Gate-Driver Device Offering
Superior Replacement of NPN and PNP
Discrete Solutions
5A Peak-Source and Sink Symmetrical Drive
Ability to Handle Negative Voltages (-4V) at
InputsFast Propagation Delays (11ns typical)
Fast Rise and Fall Times (8.5ns and 7ns typical)
4.5V to 18V Single-Supply Range
Outputs Held Low During VDD UVLO
(ensures glitch-free operation at power up andpower down)
TTL and CMOS Compatible Input-Logic
Threshold (independent of supply voltage)
Hysteretic-Logic Thresholds for High-Noise
Immunity
Dual Input Design (choice of an inverting (INpin) or non-inverting (IN+ pin) driverconfiguration)– Unused Input Pin can be Used for Enable or
Disable Function
Output Held Low when Input Pins are Floating
Input Pin Absolute Maximum Voltage Levels
Not Restricted by VDD Pin Bias Supply
Voltage
Operating Temperature Range of –40°C to+140°CMicro SIZE PACKAGES: SOT23-5

2 APPLICATIONS

3 DESCRIPTIONSThe RS8801 single-channel, high-speed, low-side gate
driver device is capable of effectively driving MOSFET
and IGBT power switches. Using a design that
inherently minimizes shoot-through current, theRS8801 is capable of sourcing and sinking high peakcurrent pulses into capacitive loads offering rail-to-rail
drive capability and extremely small propagation delay
typically 11ns.
The RS8801 device is capable of handling -4V at input.
The RS8801 provides 5A source and sink peak-drive
current capability at VDD = 12V.
The RS8801 is designed to operate over a wide VDD
range of 4.5V to 18V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO)
circuitry on VDD pin holds output low outside VDD
operating range. The capability to operate at low
voltage levels such as below 5V, along with best-inclass switching characteristics, is especially suited for
driving emerging wide band-gap power-switching
devices as GaN power semiconductor devices.
The RS8801 series is available in Green SOT23-5
packages. It operates over an ambient temperature
range of -40°C to +140°C.

Device Information (1)PART
NUMBER
RS8801(1)

Switch-Mode Power Supplies
DC-to-DC Converters
Companion Gate-Driver Devices for DigitalPower Controllers
 Solar Power, Motor Control, UPS Gate Driver for Emerging Wide Band-Gap
Power Devices (such as GaN)

REV A.1

1 / 18PACKAGESOT23-5

BODY SIZE(NOM)
1.60mm×2.92mm

For all available packages, see the orderable addendum at theend of the data sheet.

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RS8801
4 Typical Application Diagrams
Inverting Input

Non-Inverting Input
VDD

4.5V to 18V

1 VDD

VDD

OUT 5
R1

C1

RS8801

3 IN+

4.5V to 18V

C1

2 GND

IN+

Q1

Q1
1 VDD

R1

RS8801
2 GND
3 IN+

IN- 4

2 / 18

OUT 5

IN- 4

IN-

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RS8801
Table of Contents
1 FEATURES ............................................................................................................................................................................... 1
2 APPLICATIONS ...................................................................................................................................................................... 1
3 DESCRIPTIONS ...................................................................................................................................................................... 1
4 Typical Application Diagrams ............................................................................................................................................. 2
5 Revision History ..................................................................................................................................................................... 4
6 PACKAGE/ORDERING INFORMATION (1) ..................................................................................................................... 5
7 Pin Configuration and Functions (Top View) .................................................................................................................. 6
8 SPECIFICATIONS ................................................................................................................................................................... 7
8.1 Absolute Maximum Ratings .......................................................................................................................................... 7
8.2 ESD Ratings ...................................................................................................................................................................... 7
8.3 Recommended Operating Conditions ......................................................................................................................... 7
8.4 ELECTRICAL CHARACTERISTICS ............................................................................................................................... 8
8.5 TYPICAL PERFORMANCE CHARACTERISTICS ....................................................................................................10
9 Detailed Description ...........................................................................................................................................................13
9.1 Overview .........................................................................................................................................................................13
9.2 Functional Block Diagram............................................................................................................................................13
9.3 VDD and Undervoltage Lockout ..................................................................................................................................14
9.4 Device Functional Modes ............................................................................................................................................14
10 Power Supply Recommendations ..................................................................................................................................15
11 Layout ...................................................................................................................................................................................15
12 PACKAGE OUTLINE DIMENSIONS .............................................................................................................................16
13 TAPE AND REEL INFORMATION .................................................................................................................................17

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RS8801
5 Revision History
Note: Page numbers for previous revisions may different from page numbers in the current version.
VERSION

Change Date

Change Item

A.1

2023/10/26

Initial version completed

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RS8801
6 PACKAGE/ORDERING INFORMATION (1)Orderable Device

Package TypeOp Temp(°C)

RS8801HXF5

SOT23-5-40°C ~+140°C

DeviceMarking (2)8801

MSL (3)

Package Qty

MSL1

Tape and Reel,3000

NOTE:(1) This information is the most current data available for the designated devices. This data is subject to change without notice and revisionof this document. For browser-based versions of this data sheet, refer to the right-hand navigation.
(2) There may be additional marking, which relates to the lot trace code information (data code and vendor code), the logo or theenvironmental category on the device.
(3) MSL, The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications.

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RS8801
7 Pin Configuration and Functions (Top View)(TOP VIEW)

VDD

1

5 OUT

GND 2
IN+

3

4 INSOT23-5

Pin Description
SOT23-5

DESCRIPTION

I/O (1)NUMBER

NAME

1

VDD

-

Supply input.

2

GND

G

Ground.

3

IN+

I

4

IN-

I

5

OUT

O

Non-inverting input. Apply PWM control signal to this pin when driver is desired to be
operated in non-inverting configuration. When the driver is used in inverting
configuration, connect IN+ to VDD in order to enable output, OUT held LOW if IN+ is
unbiased or floating.
Inverting input. Apply PWM control signal to this pin when driver is desired to be
operated in inverting configuration. When the driver is used in non-inverting
configuration, connect IN- to GND in order to enable output, OUT held LOW if IN- isunbiased or floating.
Sourcing/Sinking current output of driver.

(1) I=input, O=output, G= Ground.

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RS8801
8 SPECIFICATIONS
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2) (3)Supply voltage
OUT voltage

MIN

MAX

UNIT

VDD

-0.3

22

V

DC

-0.3

VDD+0.3

Repetitive pulse less than 200ns (4)-2

VDD+0.3

Output continuous current

IOUT_DC(Source/Sink)

Output pulsed current (0.5us)

IOUT_pulsed (Source/Sink)

Input voltage

IN+, IN- (5)θJA

Package thermal impedance (6)

TJ

A
V

280

°C/W

-40

150

°C

-65

150

°C

260

°C

Lead Temperature (Soldering, 10s)
(1)

(2)
(3)
(4)
(5)
(6)
(7)

A

5
SOT23-5

Storage Temperature Range

0.4
22

-4

operating virtual junction temperature range (7)VStresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. See
Packaging Section of the datasheet for thermal limitations and considerations of packages.
These devices are sensitive to electrostatic discharge; follow proper device-handling procedures.
Values are verified by characterization on bench.
Maximum voltage on input pins is not restricted by the voltage on the VDD pin.
The package thermal impedance is calculated in accordance with JESD-51.
The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (T J(MAX) - TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.

8.2 ESD Ratings
The following ESD information is provided for handling of ESD-sensitive devices in an ESD protected area only.
VALUE
V(ESD)

Electrostatic discharge

Human-Body Model (HBM), MIL-STD-883K METHOD 3015.9±3000

Charged-Device Model (CDM), ANSI/ESDA/JEDEC JS-002-2018

±1000

UNIT
V

ESD SENSITIVITY CAUTION
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its publishedspecifications.

8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN

TYP

MAX

UNIT

Supply voltage range, VDD

4.5

12

18

V

Operating junction temperature range

-40

140

°C

Input voltage, IN+, IN-

0

18

V

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RS8801
8.4 ELECTRICAL CHARACTERISTICS
VDD=12V, TA=TJ=-40°C to 140°C, 1μF capacitor from VDD to GND. Currents are positive into, negative out of the specified
terminal.
SYMBOLPARAMETERTEST CONDITION

MIN

TYP

MAX

UNIT

BIAS CURRENTS

IDD(OFF)

Startup current

VDD=3.4V

IN+=VDD, IN-=GND

42.5

μA

IN+ = IN- = GND

40μA

IN+ = IN- = VDD

25μA

IN+=GND, IN-=VDD

IDD(OFF)

Startup current

VDD=12V

23

μA

IN+=VDD, IN-=GND

215

270

300

μA

IN+ = IN- = GND

130

180

200

μA

IN+ = IN- = VDD

80

120

130

μA

IN+=GND, IN-=VDD

80

122.5

130

μA

3.9

4.3

4.5

V

3.45

4.0

4.45

V

UNDER VOLTAGE LOCKOUT (UVLO)
VON
VOFF
VDD_H

Supply start threshold
Minimum operating Voltage
after supply start
Supply voltage hysteresis

TA = 25°C

0.3

V

INPUTS (IN+, IN-)
VIN_H

Input signal high threshold

VIN_L

Input signal low threshold

RINP

Output high for IN+ pin, Output low forIn- pin
Output low for IN+ pin, Output high forIN- pin
VDD=12V, VINP=4V

RINN

2.8
1

V
V

150

235

250

kΩ

150

210

250

kΩ

SOURCE/SINK Current
ISRC/SNK (2)Source/ Sink peak current

CLOAD=0.22μF, FSW = 1kHz

±5A

VDD = 12V, IOUT=-10mA

30mV

VDD = 4.5V, IOUT=-10mA

35

mV

VDD = 12V, IOUT=10mA

5.05

mV

VDD = 4.5V, IOUT=10mA

5.15

VDD = 12V, IOUT=10mA

3

VDD = 4.5V, IOUT=10mA

3.5

VDD = 12V, IOUT=10mA

0.5

VDD = 4.5V, IOUT=10mA

0.5

OUTPUTS (OUT)
VOD-VOHHigh output voltage

VOL

Low output voltage

ROH

Output pullup resistance

ROL

Output pulldown resistance

mV
4
0.7

Ω
Ω

SWITCHING CHARACTERISTICS
VDD = 12V, CLOAD=1.8nF

8.5

VDD = 4.5V, CLOAD=1.8nF

15.5

VDD = 12V, CLOAD=1.8nF

7

VDD = 4.5V, CLOAD=1.8nF

5.5

tR

Rise time (1) (2)tF

Fall time (1) (2)tD1IN+ to output propagation
delay (1) (2)VDD=12V, 5V input pulse CLOAD =1.8nF

11

VDD=4.5V, 5V input pulse CLOAD =1.8nF

12.5

tD2

IN- to output propagation
delay (1) (2)VDD=12V, 5V input pulse CLOAD =1.8nF

14

VDD=4.5V, 5V input pulse CLOAD =1.8nF

16

ns
ns
ns
ns

(1) See timing diagrams in Figure 1, Figure 2.
(2) This parameter is ensured by design and/or characterization and is not tested in production.

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RS8801
High

High

IN+

IN+

Low

Low

High

High

IN-

IN-

Low

Low

High

High

OUT

OUT

Low

Low
tD1 trtD2 trtD1 tfFigure 1. Non-inverting configuration PWM
Input to IN+ pin (IN- pin tied to GND)tD2 tfFigure 2. inverting configuration PWM Input toIN- pin (IN+ pin tied to VDD)

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RS8801
8.5 TYPICAL PERFORMANCE CHARACTERISTICS
NOTE: The graphs and tables provided following this note are a statistical summary based on a limited number of samples
and are provided for informational purposes only.
IN+=GND,IN-=GND
IN+=VDD,IN-=GND

500
VDD=3.4V

Operating Supply Current (μA)

Start-Up Current (μA)

80

60

40

20

0
-50

0

50

Temperature (℃)

100

300
200
100

0

50

Temperature (℃)

100

150

Figure 4. Supply Current vs Temperature (Output
in DCON/OFF Condition)
500

IN+=GND, IN-=GND

350

IN+=VDD, IN-=GND

450
400

300

350

250

IDD (μA)

IDD (μA)

400

-50

400

200
150

300
250
200
150

100

100

50

50

0

0
2

7

12

17

22

2

7

Supply Voltage (V)

16

17

22

Figure 6. Supply Current vs Supply Voltage
25

Supply Current (mA)

VDD=12V
CLoad=1.8nF
fSW=600kHz

15.5

12

Supply Voltage (V)Figure 5. Supply Current vs Supply Voltage

IDD (mA)

VDD=12V

0150

Figure 3. Start-Up Current vs Temperature

IN+=GND,IN-=GND
IN+=VDD,IN-=GND

15

14.5

14

VDD=4.5V
VDD=12V
VDD=18V

20
15
10
5
0

-50

0

50

Temperature (℃)

100

150

Figure 7. Operating Supply Current vs
Temperature (Output Switching)

0

100

200

300

400

500

600

Frequency(kHz)

Figure 8. Operating Supply Current vs Frequency

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RS8801
TYPICAL PERFORMANCE CHARACTERISTICS
NOTE: The graphs and tables provided following this note are a statistical summary based on a limited number of samples
and are provided for informational purposes only.
4

UVLO Rising
UVLO Falling

Input Threshold (V)UVLO Threshold Voltage (V)

5

4.5

4

3.5

2

1

0
-50

0

50

Temperature (℃)

100

-50

150

Figure 9. UVLO Threshold Voltage vs
Temperature
550

Temperature (℃)

100

150

1

Pull−Down Resistance (Ω)

ROH
VDD=12V

4.5

0

Figure 10. Input Threshold vs Temperature

4
3.5
3
2.5
2

ROL
VDD=12V

0.8
0.6
0.4
0.2
0

-50

0

50

Temperature (℃)

100

150

-50

Figure 11. Output Pullup Resistance vs
Temperature

050

Temperature (℃)

100

150

Figure 12. Output Pulldown Resistance vs
Temperature
10

10

VDD=12V

VDD=12V
9.5

99Fall Time (ns)

Rise Time (ns)VDD=12V

3

3

Output Pullup Resistance (Ω)

VINH
VINL

8.5
8

8
7
6

7.5

5

7
-50

0

50

Temperature (℃)

100

-50

150

Figure 13. Rise Time vs Temperature

050

Temperature (℃)

100

150

Figure 14. Fall Time vs Temperature

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RS8801
TYPICAL PERFORMANCE CHARACTERISTICS
NOTE: The graphs and tables provided following this note are a statistical summary based on a limited number of samples
and are provided for informational purposes only.
Turn-On
Turn-Off20
VDD=12V16
12
84

VDD=12V

0

50

12
8
4

0

0
-50

0

50

Temperature (℃)

100

150

-50

Figure 15. Non-Inverting Input to Output
Propagation Delay vs Temperature
20

Temperature (℃)

100

150

Figure 16. Inverting Input to Output Propagation
Delay vs Temperature
20

Turn-On
Turn-Off

16
12
8
4

Turn-On
Turn-Off16

Propagation Delay (ns)

Propagation Delay (ns)Turn-On
Turn-Off16

Propagation Delay (ns)

Propagation Delay (ns)

20

12
8
4

0

0

4

6

8

10

12

14

Supply Voltage (V)

16

18

4

Figure 17. Non-Inverting Propagation Delays vsSupply Voltage

6

8

10

12

14

Supply Voltage (V)1618

Figure 18. Inverting Propagation Delays vsSupply Voltage

16

12

14

10

Fall Time (ns)

Rise Time (ns)

12
10
8
6

8
6
4

4
2

2
0

0
4

6

8

10

12

14

Supply Voltage (V)

16

18

4

Figure 19. Rise Time vs Supply Voltage

6

8

10

12

14

Supply Voltage (V)1618

Figure 20. Fall Time vs Supply Voltage

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RS8801
9 Detailed Description
9.1 Overview
The RS8801 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET
and IGBT power switches. Using a design that inherently minimizes shoot-through current, the RS8801 is capableof sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability andextremely small propagation delay typically 11ns.
The RS8801 device is capable of handling -4V at input.
The RS8801 provides 5A source and sink peak-drive current capability at VDD = 12V.
The RS8801 is designed to operate over a wide VDD range of 4.5V to 18V and wide temperature range of -40°C
to 140°C.

9.2 Functional Block Diagram

IN+ 3

VDD
VDD

1

IN- 4

VDD

5 OUT
VDD

UVLO
GND 2

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RS8801
9.3 VDD and Undervoltage Lockout
The RS8801 has internal Undervoltage Lockout (UVLO) protection feature on the VDD-pin supply-circuit blocks.
Whenever the driver is in UVLO condition (for example when VDD voltage is less than VON during power up andwhen VDD voltage is less than VOFF during power down), this circuit holds all outputs LOW, regardless of thestatus of the inputs. The UVLO is typically 4.3V with 300mV typical hysteresis.
Because the driver draws current from the VDD pin to bias all internal circuits, for the best high-speed circuit
performance, two VDD bypass capacitors are recommended to prevent noise problems. The use of surface mountcomponents is highly recommended. A 0.1μF ceramic capacitor should be located as close as possible to the VDD
to GND pins of the gate driver. In addition, a larger capacitor (such as 1μF) with relatively low ESR should beconnected in parallel and close proximity, in order to help deliver the high-current peaks required by the load.
The parallel combination of capacitors should present a low impedance characteristic for the expected current
levels and switching frequencies in the application.

VDD

VDD Threshold

VDD Threshold

IN-

IN+

IN+

IN-

OUT

OUT

Figure 21. Power-Up (Non-Inverting Drive)

Figure 22. Power-Up (Inverting Drive)

9.4 Device Functional Modes
In the normal mode the output state is dependent on states of the IN+ and IN– pins. Table 1 below lists theoutput states for different input pin combinations.

Table 1. Device Logic Table
IN+ PIN

IN– PIN

OUT PIN

L

L

L

L

H

L

H

L

H

H

H

L

x (1)

Any

L

Any

x (1)

L

(1) x = Floating Condition

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RS8801
10 Power Supply Recommendations
The bias supply voltage range for which the RS8801 device is rated to operate is from 4.5V to 18V. The lower
end of this range is governed by the internal UVLO protection feature on the V DD pin supply circuit blocks.
Whenever the driver is in UVLO condition when the V DD pin voltage is below the V(ON) supply start threshold,this feature holds the output low, regardless of the status of the inputs. The upper end of this range is driven by
the 22V absolute maximum voltage rating of the V DD pin of the device (which is a stress rating). Keeping a 2V
margin to allow for transient voltage spikes, the maximum recommended voltage for the VDD pin is 18V.

11 Layout
The following circuit layout guidelines are strongly recommended when designing with these high-speed drivers.
• Locate the driver device as close as possible to the power device in order to minimize the length of highcurrent traces between the output pins and the gate of the power device.
• Locate the VDD bypass capacitors between VDD and GND as close as possible to the driver with minimal
trace length to improve the noise filtering. These capacitors support high-peak current being drawn from
VDD during turn on of power MOSFET. The use of low inductance SMD components such as chip resistors
and chip capacitors is highly recommended.

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RS8801
12 PACKAGE OUTLINE DIMENSIONSSOT23-5 (3)
D

1.90
b

2.59

E1

E
0.99
0.69

0.95

e

e1

RECOMMENDED LAND PATTERN (Unit: mm)

0.2

A A2

c

θ
L

A1

Dimensions In Millimeters

Dimensions In Inches

Min

Max

Min

Max

A (1)

1.050

1.250

0.041

0.049

A1

0.000

0.100

0.000

0.004

A2

1.050

1.150

0.041

0.045

b

0.300

0.500

0.012

0.020

c

0.100

0.200

0.004

0.008

D (1)

2.820

3.020

0.111

0.119

E (1)

1.500

1.700

0.059

0.067

E1

2.650

2.950

0.104

0.116

Symbol0.950(BSC) (2)e0.037(BSC) (2)

e1

1.800

2.000

0.071

0.079

L

0.300

0.600

0.012

0.024

θ

0°

8°

0°

8°

NOTE:
1. Plastic or metal protrusions of 0.15mm maximum per side are not included.
2. BSC (Basic Spacing between Centers), "Basic" spacing is nominal.
3. This drawing is subject to change without notice.

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RS8801
13 TAPE AND REEL INFORMATIONREEL DIMENSIONSTAPE DIMENSION

Reel
DiameterReel Width(W1)

DIRECTION OF FEEDNOTE: The picture is only for reference. Please make the object as the standard.

KEY PARAMETER LIST OF TAPE AND REEL
Package TypeSOT23-5

Reel
Diameter7’’

Reel
Width(mm)
9.5

A0
(mm)
3.20

B0
(mm)
3.20

K0
(mm)
1.40

P0
(mm)
4.0

P1
(mm)
4.0

P2
(mm)
2.0

W
(mm)
8.0

Pin1
Quadrant
Q3

NOTE:
1. All dimensions are nominal.
2. Plastic or metal protrusions of 0.15mm maximum per side are not included.

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RS8801
IMPORTANT NOTICE AND DISCLAIMER
Jiangsu RUNIC Technology Co., Ltd. will accurately and reliably provide technical and reliability data (including
data sheets), design resources (including reference designs), application or other design advice, WEB tools, safety
information and other resources, without warranty of any defect, and will not make any express or implied
warranty, including but not limited to the warranty of merchantability Implied warranty that it is suitable for a
specific purpose or does not infringe the intellectual property rights of any third party.
These resources are intended for skilled developers designing with RUNIC products You will be solely
responsible for: (1) Selecting the appropriate products for your application; (2) Designing, validating and testing
your application; (3) Ensuring your application meets applicable standards and any other safety, security or otherrequirements; (4) RUNIC and the RUNIC logo are registered trademarks of RUNIC INCORPORATED. All
trademarks are the property of their respective owners; (5) For change details, review the revision history
included in any revised document. The resources are subject to change without notice. Our company will not beliable for the use of this product and the infringement of patents or third-party intellectual property rights due
to its use.

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