Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department苏州纳维科技有限公司
产品规格性能参数总表
Suzhou Nanowin Science & Technology Co. Ltd.
Product Specifications
市场营销部
Marketing Department1

Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

2 英寸氮化镓厚膜晶片
2 inch GaN Templates

性能参数 Specifications:产品型号 Item

GaN-T-C-U-C50

尺寸 Dimensions

GaN-T-C-N-C50

GaN-T-C-P-C50

Ф 50.8mm ± 0.1mm

厚度 Thickness

4 µm, 20 µm

晶体取向 Orientation

4 µm

C-plane(0001) ± 0.5°

导电类型 Conduction Type

N-type(undoped)

N-type(Si-doped)

P-type(Mg-doped)电阻率 Resistivity(300K)< 0.5 Ω·cm

< 0.05 Ω·cm

~ 10 Ω·cm

载流子浓度 Carrier Concentration< 5x1017 cm-3

> 1x1018 cm-3

> 6x1016 cm-3

迁移率 Mobility~ 300 cm2/Vs~ 200 cm2/Vs~ 10 cm2/Vs

位错密度 Dislocation Density

Less than 5x108 cm-2

衬底结构 Substrate structure

GaN on Sapphire(Standard: SSP Option: DSP)

有效面积 Useable Surface Area

> 90%

包装 Package

Packaged in a class 100 clean room environment, in cassettes of 25pcs
or single wafer containers, under a nitrogen atmosphere.

* Other thickness can be customized2

Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

4 英寸氮化镓厚膜晶片
4 inch GaN Templates

性能参数 Specifications:产品型号 Item

GaN-T-C-U-C100

GaN-T-C-N-C100

尺寸 Dimensions

Ф 100mm ± 0.1mm

厚度 Thickness

4 µm, 20 µm

晶体取向 Orientation

C-plane(0001) ± 0.5°

导电类型 Conduction Type

N-type(undoped)

N-type(Si-doped)电阻率 Resistivity(300K)< 0.5 Ω·cm

< 0.05 Ω·cm

载流子浓度 Carrier Concentration< 5x1017 cm-3

> 1x1018 cm-3

迁移率 Mobility~ 300 cm2/Vs~ 200 cm2/Vs

位错密度 Dislocation Density

Less than 5x108 cm-2

衬底结构 Substrate structure

GaN on Sapphire(Standard: SSP Option: DSP)

有效面积 Useable Surface Area

> 90%

包装 Package

Packaged in a class 100 clean room environment, in cassettes of25pcs or single wafer containers, under a nitrogen atmosphere.

3Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

2 英寸氮化镓自支撑晶片2 inch Free-Standing GaN Substrates
性能参数 Specifications:产品型号 Item

GaN-FS-C-U-C50

GaN-FS-C-N-C50

尺寸 Dimensions

Ф 50.8mm ± 1mm

厚度 Thickness

350 ± 25 µm

有效面积 Useable Surface Area
晶体取向 Orientation

GaN-FS-C-SI-C50> 90%
C-plane (0001) off angle toward M-Axis 0.35°± 0.15°

主定位边 Orientation Flat

(1-100) ± 0.5°, 16.0 ± 1.0mm

次定位边 Secondary Orientation Flat

(11-20) ± 3°, 8.0 ± 1.0mm

TTV(Total Thickness Variation)≤15 µm弯曲度 BOW≤20 µm

导电类型 Conduction Type

N-type(undoped)

N-type(Ge-doped)

Semi-Insulating(Fe-doped)电阻率 Resistivity(300K)< 0.5 Ω·cm

< 0.05 Ω·cm

>106 Ω·cm

Less than 5x105 cm-2

位错密度 Dislocation Density

Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground抛光 Polishing
包装 Package

Packaged in a class 100 clean room environment, in single wafercontainers, under a nitrogen atmosphere.

* 3inch and 4inch Free-Standing GaN Substrates are coming soon.
4Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

定制尺寸氮化镓自支撑晶片Free-standing GaN Substrates (Customized size)
性能参数 Specifications:产品型号 Item

GaN-FS-C-U-S10*10

GaN-FS-C-N-S10*10

GaN-FS-C-SI-S10*10

尺寸 Dimensions

10.0mm×10.5mm；±0.2mm

厚度 Thickness

350 ± 25 µm

晶体取向 Orientation

C-plane (0001) off angle toward M-Axis 0.35°± 0.15°

TTV(Total Thickness Variation)≤10 µm弯曲度 BOW≤10 µm

导电类型 Conduction TypeN-type(undoped)

N-type(Ge-doped)

Semi-Insulating(Fe-doped)电阻率 Resistivity(300K)< 0.5 Ω·cm

< 0.05 Ω·cm

>106 Ω·cm

位错密度 Dislocation Density

Less than 5x105 cm-2

有效面积 Useable Surface Area

> 90%

抛光 Polishing
包装 Package

Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine groundPackaged in a class 100 clean room environment, in single wafer
containers, under a nitrogen atmosphere.

* Other size can be customized (e.g. 14.0mm×15.0mm, Ф 25.4mm, Ф 38.1mm)
5Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

非极性半极性氮化镓自支撑衬底Non-Polar and Semi-Polar Freestanding GaN Substrates
性能参数 Specifications:产品型号 Item

GaN-FS-A-U/N/SI-S

GaN-FS-M- U/N/SI -S

GaN-FS-SP- U/N/SI -S

5.0~10.0mm×10.0mm；±0.2mm

尺寸 Dimensions

5.0~10.0mm×20.0mm；±0.2mm

厚度 Thickness

晶体取向 Orientation

350 ± 25 µm

A-plane(11-20) off angle M-plane(1-100) off angle
toward C-Axis -1°± 0.2° toward C-Axis -1°± 0.2°

TTV(Total Thickness Variation)≤10 µm弯曲度 BOW≤10 µm

导电类型 Conduction Type电阻率 Resistivity(300K)

N-type(undoped)< 0.5 Ω·cm

N-type(Ge-doped)< 0.05 Ω·cm

Semi-Insulating(Fe-doped)>106 Ω·cm

位错密度 Dislocation Density

Less than 5x105 cm-2

有效面积 Useable Surface Area

> 90%

抛光 Polishing
包装 Package(20-21)(20-2-1)(11-22)(30-31)(10-11)

Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine groundPackaged in a class 100 clean room environment, in single wafer containers,
under a nitrogen atmosphere.

* Other thickness, size and offcut can be customized
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Suzhou Nanowin Science & Technology Co. Ltd.

Marketing Department

氮化铝厚膜晶片2” AlN Templates

性能参数 Specifications:产品型号 Item

AlN-T-C-C50

尺寸 Dimensions

Ф 50.8mm ± 0.1mm

衬底 Substrate

Sapphire (Single Side Polished)

厚度 Thickness

4 ~ 5 µm

晶体取向 Orientation

C-plane (0001) ± 1°

导电类型 Conduction Type

Semi-Insulating晶体质量 Crystalline quality

XRD FWHM of (0002) < 350 arcsec.
XRD FWHM of (10-12) < 450 arcsec

边缘禁区 Exclusion zone

< 2 mm

表面粗糙度 Surface Roughness
包装 Package

Ra < 1.5 nm (10µm * 10µm)
Packaged in a class 100 clean room environment, in cassettes of 25pcs
or single wafer containers, under a nitrogen atmosphere.

*Other thickness, size can be customized
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