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この度、九州工業大学にて次世代パワーエレクトロニクス研究センター主催により、イギリスノッティンガム大学 Alberto Castellazzi 准教授による特別講義を下記の要領にて開催致します。
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敬具記
日時：平成 28 年 4 月 14 日（木） 13：30～（予定）場

所：教育研究 5 号棟 5-2B 講義室

タイトル：
Wide-band-gap power device based power conversion for renewable energy sources
講師：Dr. Alberto Castellazzi
Associate Professor of Power Electronics PEMC Group
University of Nottingham

Abstract：Presented for a long time mainly as a synonym of high temperature capable devices,wide-band-gap (WBG) semiconductors are presently attracting significant application-related
interest due not only to their higher efficiency, but also to their stability of performance overswitching frequency and temperature.
This feature enables significant improvements in power density and reliability, key figures ofmerit for technology breakthrough. This talk will consider in particular power conversion
applications for renewable energy sources, where the specific characteristics of WBG powerdevices enable power converter design optimization against the intrinsically intermittent
nature of the power source.
問合せ：次世代 PE 研究センター
Tel & Fax：884-3268

Biography
Alberto Castellazzi holds a Laurea degree in Physics (1998) from the University of Milan, Italy, and a PhD degree inElectrical Engineering (2004) from the Munich University of Technology, Germany.
From 1998 to 2000 he was with Carlo Gavazzi Space S.p.A., in Milan, Italy, as a designer of power electronics forspace applications. In 2000 he joined the Power Electronics Department of Siemens Corporate Technology, inMunich, Germany, to work on the reliability of PowerMOSFETs in novel automotive applications.
In 2004 and 2005 he was a Research Scientist at the Institute for Physics of Electrotechnology of the Munich
University of Technology, where he was mainly concerned with electro-thermal 2D device simulation ofPowerMOSFETs and IGBTs. In this period, he also co-supervised students in a laboratory of electronics and alaboratory of process and device simulation; in 2005 he was in charge of the organisation of a series of seminars onelectro-physics and was the substitute secretary of the commission for student matters.
From January 2006 until September 2008 he was with ETH Zurich, Switzerland, where he was a Senior Researcher atthe Integrated Systems Laboratory. In 2006 and 2007 he was a visiting researcher at the Power Electronics AssociatedResearch Laboratory (PEARL) of ALSTOM-Transportation, in Semeac, France, where he worked on IGBT modules
for traction applications.
In October 2008 he joined the Department of Electrical and Electronic Engineering of the University of Nottingham
as a Lecturer in Power Electronics. From February to July 2011 he was a Guest Scholar at Kyoto University, in thelaboratory of Prof. Takashi Hikihara, where he worked on characterisation and modelling of SiC power devices incollaboration with other academic (Prof. Tsunenobu Kimoto, Kyoto; Prof. Tsuyoshi Funaki, Osaka) and industrialpartners.

Dr. Castellazzi is a member of the IEEE Power Electronics Society and Electron Devices Society and ofthe European Power Electronics Association. He is a member of the Technical Programme Committee of
the ISPSD, IPEC and PEMD conferences.

https://www.nottingham.ac.uk/engineering/people/alberto.castellazzi