Important notice:This application note is obsolete.
See AN90003 for the latest information.

Dear Customer,TE

On 7 February 2017 the former NXP Standard Product business became a new company with thetradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets

O
LE

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, usesalesaddresses@nexperia.com (email)BS

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending ontheversion,shown- © NXP
N.V.as(year).
Allbelow:rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:- © Nexperia B.V. (year). All rights reserved.

O

If you have any questions related to the data sheet, please contact our nearest sales office via e-mailor telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation andunderstanding,
Kind regards,

Team Nexperia

AN10874
LFPAK MOSFET thermal design guide

Document information

Application noteTE

Rev. 02 — 27 January 2011

Content

Keywords

LFPAK, MOSFET, thermal analysis, design and performance, thermal
considerations, thermal resistance, junction to ambient, junction tomounting base, thermal vias, JESD51, SMD, surface-mount, PCB design

Abstract

Thermal aspects are an important concern when designing for power
MOSFETs. This is especially true for applications operating at higher
ambient temperatures. This application note describes, in general terms,
the different techniques which can be used during the design phase toensure the PCB layout provides optimum thermal performance.

O

BS

O

LE

Info

AN10874

NXP Semiconductors

LFPAK MOSFET thermal design guide

Revision history
Date

Description

02

20110127

final release01

20091119

Initial version

O

BS

O

LE

TE

Rev

Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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LFPAK MOSFET thermal design guide

1. Introduction
1.1 The need for thermal analysis
Power MOSFETs are commonplace in modern electronic circuit design, where they are
frequently used to switch loads of many different types – ranging from a few milliamps orless to several tens of amps, depending on application. The popularity of power
MOSFETs is almost certainly attributable to their ease of drive compared to their bipolar
counterparts, together with the wide range of package, voltage and RDS(on) combinations
which are now available.
Of course, MOSFETs are not perfect switches and neither are they indestructible, and thecircuit designer should be aware of the following thermal considerations when designing asystem employing MOSFET devices:TE• Even when fully turned on, a MOSFET will dissipate power due to I2.RDS(on) losses(where RDS(on) is the device on-state resistance)• I2.RDS(on) losses will result in temperature rises in the device and elsewhere• MOSFETs may be damaged or destroyed by excessive device temperature

BS

O

LE

Thermal aspects are an important concern when designing with power MOSFETs,
especially in applications which may be operating at elevated ambient temperatures, as
the MOSFET junction temperature (Tj) must be kept below 175 C if operation is to remain
within specification. It is also important to bear in mind that the PCB to which the(surface-mount) MOSFETs are soldered will also have a maximum operating temperatureof around 120 C. The MOSFETs will be using the PCB as their primary method ofheatsinking, and their dissipated heat energy will also cause PCB temperatures to rise.
Care must therefore be taken that the PCB temperatures also remain within acceptable
limits.

1.2 MOSFET Rth parameters and their limitations

O

In order to provide some measure of device thermal performance, it is normal industry
practice for MOSFET data sheets to carry “thermal resistance” (Rth) figures. The conceptof “thermal resistance” is analogous to that of electrical resistance, and is described inmany texts on thermal management.
The two most common MOSFET thermal resistance values in data sheets are:AN10874

Application note

Rth(j-a):

The thermal resistance from device junction (die) to ambient. This is a single
thermal resistance figure and is the net effect of all the possible series andparallel paths from junction to ambient. Typically this would include heat loss
paths directly from the surface of the device package and also via the PCB towhich the device is soldered

Rth(j-mb):

The thermal resistance from junction to mounting base. “Mounting base” isdefined as the point at which the device would normally be soldered to a
PCB, and is primarily a conduction path only.

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The methods and conditions under which device thermal resistance figures should bemeasured are described in the JESD51-x series of standards, and as one might expect,
the standards are very precise in their descriptions of how testing should be carried out. It
might therefore be expected that the thermal resistance figures would be sufficient for adesigner wishing to carry out thermal analysis of a system. Unfortunately, this is not thecase, for the following reasons:• Rth(j-a) figures are highly dependent on PCB construction and layout, and the PCBs
defined in the JESD51 standards are not generally representative of those found inreal applications• The PCBs specified by MOSFET manufacturers for their Rth(j-a) data sheet figures
almost never follow the JEDEC guidelines anyway, are often described in only thevaguest of terms and are inconsistent from manufacturer to manufacturer• The Rth(j-a) test methods do not allow for several devices mounted in close proximityTEon the same PCB (a typical arrangement in a real-life application)• Thermal resistance Rth(j-mb) is only one part of the total thermal pathway from junction
to ambient

LE

Clearly then, the thermal resistance figures Rth(j-mb) and Rth(j-a) as published are of little
practical use in the thermal analysis of real-life circuits and systems. In fairness to JEDEC,
Rth figures were never intended to be used for design or system analysis, as this notefrom specification JESD51-2 indicates:

BS

O“…The purpose of this document is to outline the environmental conditions necessary toensure accuracy and repeatability for a standard junction-to-ambient (Rth(j-a)) thermal
resistance measurement in natural convection. The intent of (Rth(j-a)) measurements issolely for a thermal performance comparison of one package to another in a standardized
environment. This methodology is not meant to and will not predict the performance of a
package in an application-specific environment.”O

Sadly, despite this clear statement from JEDEC, we still see many instances of designers
attempting to use data sheet Rth figures in thermal design and analysis exercises.

1.3 Aim of this document
Having determined that the data sheet Rth figures are not appropriate for carrying out
thermal analysis of real-life applications, it is natural to ask: what is the alternative?
Unfortunately there is no simple method of thermal analysis which is applicable tocomplex situations whilst offering a reasonable degree of accuracy. The heat transfer
mechanisms involved are simply too complex with too many interacting thermal pathways
to allow for a simple yet valid method of analysis. In general, such analysis may only be
carried out by either:• recreating the scenario in simulation using computer-based simulationor• building the scenario in real-life and performing an experimental evaluation
The former approach can yield accurate, rapid results at the cost of expensive softwareand the necessary skills required to operate it, whilst the latter incurs the time and costassociated with building and measuring a representative model.

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AN10874

NXP Semiconductors

LFPAK MOSFET thermal design guideWe recognize that a third approach may also be of use, particularly in the early stages of
PCB design, which bridges the gulf between the less-than-helpful Rth figures at one
extreme and full prototype simulation or build at the other. This document will illustrate, in
general terms, the different techniques which may be applied to typical PCB design, inorder to steer the layout towards one which has optimum thermal performance. Factors
which will be considered include:• PCB layer stack-up• The influence of common circuit topologies on PCB layout• PCB copper area
• The influence of thermal vias
• Device placement and spacing• The implications of multiple dissipating devices on a single PCBTEThis document cannot hope to address all the myriad possible combinations of device
placement, layer stack-up and so forth. Rather, its intention is to provide initial guidance tothe engineer who, faced with a brand new design task, and a lack of helpful information,
may be asking himself; “How can I be sure my devices will run at safe temperatures?”

O

LE

Finally, it almost goes without saying that the information contained within this design
guide is presented as a starting point only. Any new design should of course be
prototyped and its thermal behavior characterized before placing the design into
production.

BS

2. General approach to thermal analysis
2.1 The use of thermal simulation softwareO

In order to allow fast and flexible analysis of multiple parameter variations, the thermal
analyses presented in this document have been carried out using thermal simulation
software. The simulations use MOSFET models which have been validated against
empirical data and are known to accurately model the thermal behavior of real-life
devices.
The thermal simulation software used to carry out the analyses is the Mentor Graphics(Flomerics) “Flotherm” package. The device models used in the analysis are available forfree download from the NXP Semiconductors website.

2.2 Simulation set-up
The PCBs to be considered have the following general characteristics:• They are surface-mount designs and the MOSFETs are in the surface-mount LFPAK
packages• PCB stack-ups range from 1 to 4-layer construction, but always have an overall
thickness of 1.6 mm• PCB material is standard FR4, with a rated maximum operating temperature of
120 C• Copper thickness on all layers is 1 oz./ft2 (35 m)• The PCB is suspended in free air
AN10874

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Other important factors:• The ambient temperature is 20 C• The simulations solve for conduction, convection and radiation heat transfer• MOSFET power dissipation is 0.5 W per device• There is no forced air cooling applied i.e. only natural convection is modeled
2.3 PCB layout and stack-up
2.3.1 Factors influencing, PCB layout and stack-up

TE

When laying out a PCB we do not have a completely free choice as to where we can place
the MOSFET devices and other components and how we connect them together. Usually,
device placement and connection is a question of reconciling various (often conflicting)requirements. The factors influencing component placement may include:LE• Circuit topology• Design for ElectroMagnetic Compatibility (EMC)• Design for thermal performance• The necessity to situate certain components (e.g. connectors) in pre-defined locations• The need to provide low-resistance and low-inductance current paths in specific areasO

If we are considering a PCB design from a thermal perspective, then the ideal thermal
design may have to be compromised in some respects in order to accommodate the otherrequirements placed on the design.

BS

2.3.2 Circuit topology

O

Circuit topology is perhaps the least flexible of all the factors influencing PCB design. Afterall, if the components are not connected together in the proper manner then the circuit will
not function as expected. The topology will also dictate which MOSFET terminals may beconnected to copper planes and hence may use those planes to help dissipate heat
energy. This is particularly important for a surface-mount package such as LFPAK, where
the primary thermal pathway out of the package is through the device drain tab on theunderside of the device. Circuit topology therefore has a very great influence on thethermal design and consequent device operating temperatures.

Several different topologies will be considered in this guide, and it is believed that thesewill be relevant to a large number of typical end-user applications.

2.3.3 Design for ElectroMagnetic Compatibility (EMC)
The subject of design for electromagnetic compatibility is a complex one and is wellbeyond the scope of this document. However, one of the simpler aspects of design for
EMC is highly relevant to thermal design - the provision of a ground plane layer in the
PCB.

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From an EMC perspective, a multilayer PCB should have at least one copper layer which
is used exclusively as a ground plane, and which has a minimum of holes and breaks in it.
This requirement is not in conflict with good thermal design - indeed, the presence of acontinuous layer of copper in the PCB stack-up can only enhance the thermal
performance of the board as a whole. PCB layouts which incorporate a dedicated groundplane will be considered in all of the following analyses.

3. A single LFPAK device

TE

This section will examine the factors influencing the thermal performance of a single
LFPAK device on PCBs of several different configurations. From this point onward thephrase “thermal performance” is used when discussing the ability of a stack-up or
structure to remove heat energy from the device(s). In order to build up a comprehensive
picture of the factors influencing thermal performance, we will begin with the simplest
1-layer stack-up and then systematically add additional layers to the PCB.

3.1 Analysis 1: A single-layer PCBLE

The simplest possible PCB stack-up is that of a single top copper layer; a 1-layer
stack-up. In analysis 1 we will examine the variation in device junction temperature (Tj) as
a function of top copper area. See Figure 1.

O

BS

O

FR4 side length
40 mm

layer 1 copperside length ''x''

LFPAK
MOSFET

Cu

FR4

layer 1 copperside length ''x''

Fig 1.

AN10874

Application note

40 mm

001aak916

Single device; 1-layer stack-up

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LFPAK MOSFET thermal design guide

Figure 1 illustrates the MOSFET device mounted on a square area of layer 1 copper ofside length “x” and with FR4 of size 40 mm  40 mm. Three possible circuit configurations
corresponding to this layout are shown in Figure 2.

(1)

(1)

(1)

VCC

VCC
D

D

Q1

G

VCC
D

Q1

G

Q1

G

S

S

S
(1)

D

TE

D

Q2

G

S

S

0V

001aak918

LE

001aak917

Q2

G

0V
001aak919(1) Plane available for coolingFig 2.

b. Half-bridge set-up:
MOSFET Q1 and Q2

c. Half-bridge set-up:
MOSFET Q2 and Q1

O

a. High-side load
switch set-up:
MOSFET Q1

Three possible circuit configurations for the layout of Figure 1

O

BS

Figure 2(a) shows MOSFET Q1 configured as a high-side load switch, with its drain tabconnected to the VCC plane (in yellow). Figure 2(b) and Figure 2(c) demonstrate
MOSFETs Q1 and Q2 connected in a half-bridge configuration. Again, both devices areprimarily cooled by planes connected to their drain tabs, although for Q2 the plane
corresponds to the mid-point of the half-bridge rather than a power plane. A small degreeof additional cooling may also be realized by attaching planes to the MOSFET sources,
although the source pins are not the primary heat path out of the package and so theadditional benefit is minimal. Generally speaking, the primary heat path is through the
package drain tab and into whatever plane is attached to this connection, and it is thisconfiguration which will be considered in this guide.
By carrying out simulations for several sizes of “x” we can determine how the device
junction temperature (Tj) varies with copper area. The results are shown in Figure 3.
Remember that the ambient temperature is 20 C.

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LFPAK MOSFET thermal design guide

001aak921

100
Tj
(°C)
80

(1)

60

40

20
15

(1) Layer 1 only.

Fig 3.

20

25
30
Layer 1 side length ''x'' (mm)TE

10Device junction temperature versus layer 1 top copper side length "x"LE

The graph of Figure 3 has two notable features:• Tj depends greatly on side length “x” and hence layer 1 copper area
• The ability of the top copper to provide heatsinking for the MOSFET displays the “lawBSOof diminishing returns”. In other words, we cannot keep adding more copper area tolayer 1 in the hope of continuing to reduce Tj. Rather, from the shape of the curve wemight conclude that Tj will never decrease below, say 50 C no matter how muchcopper area we provide on layer 1

O

Section 1.1 1 it was stated that there are in fact two limiting temperatures which must not
be exceeded - MOSFET Tj and the temperature of the PCB material TPCB. For
surface-mount MOSFETs, the point of maximum TPCB will usually occur under the centreof the MOSFET tab, as one might expect. For MOSFETs in the LFPAK package, TPCB will
typically track Tj to within less than 0.5 C, and therefore we can reasonably say that
TPCB  Tj. This assumption will be made for the remainder of the analyses of the LFPAK
package. The results of Figure 3 therefore indicate that, for a PCB whose TPCB (max) is
120 C, we should not encounter problems with PCB degradation for even the smallerareas of layer 1 copper area, provided that the ambient temperature stays below
approximately 45 C.

3.1.1 The role of FR4 size in analysis 1
The choice of FR4 PCB area in Section 3.1 may seem both arbitrary and unrepresentativeof the PCB size in a real-life application. In this section, however, we will see that the areaof bare FR4 has almost no influence on device (Tj). To demonstrate this principle,
additional simulations were carried out with FR4 dimensions of 20 mm  20 mm,
30 mm  30 mm, 50 mm  50 mm, with the layer 1 copper area fixed at 10 mm  10 mm.
The results are shown in Figure 4.

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NXP Semiconductors

LFPAK MOSFET thermal design guide

001aak922

100
(1)

Tj
(°C)
80

60

40

20
30

40

50
60
FR4 side length (mm)TE

20(1) With additional layer 1 copper shown.

Fig 4.

Junction temperature versus FR4 side length

BS

O

LE

The results of Figure 4 demonstrate that the size of bare FR4 has almost no impact on
device Tj. This is in marked contrast to the results of Figure 3 where we varied the layer 1
copper area. The difference between the two sets of results is easily understood when wecompare the thermal conductivities of copper and FR4; copper has a thermal conductivityof around 380 W/(m.K) whilst for FR4 the figure is only around 0.6 W/(m.K). As thermal
conductivity is a measure of how easily heat energy travels through a substance, it should
be clear that adding even a large area of FR4 (which is a poor conductor) is nowhere nearas effective as adding a much smaller area of highly conductive copperO

We can further illustrate the insulating properties of FR4 by adding some unconnectedareas of layer 1 copper to the model, as shown in Figure 5.

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LFPAK MOSFET thermal design guide

50 mm

5 mm

Cu

50 mm

Cu

LE

FR4

TE

10 mm

Fig 5.

001aak923

5 mm

O

10 mm

Adding additional layer 1 copper to the 50 mm  50 mm FR4 board

O

BS

Figure 5 shows the 50 mm  50 mm FR4 layout with most of the layer 1 area filled with a“flood” of copper. A gap of 5 mm has been left around the device and its attached
10 mm  10 mm copper area. Although we might have expected the additional layer 1
copper to make a significant difference to device Tj, in fact this is not the case. The heat
energy is prevented from utilizing the additional “heatsinking” area by the isolation gap
around the device and the poor thermal conductivity of the intervening FR4. The ability of
FR4 to “thermally isolate” heat sources in this way is important and will be demonstrated
again in Section 4 “Two LFPAK devices” on page 19 and Section 5 “Four LFPAK devices”
on page 29.

3.2 Analysis 2: 2-layer PCB
For the purposes of this exercise we will again consider the same variations in layer 1
copper as for analysis 1. However for analysis 2 we will add the layer 4 (bottom copper)
layer measuring a fixed 25 mm  25 mm, thereby creating a 2-layer stack-up. The bottom
copper layer is shown in Figure 6.

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40 mm

FR4

Cu

40 mm

LE

TE

25 mm

O

25 mm

001aak925

The PCB is viewed from below.

Layer 4 copperBS

Fig 6.

In practical terms this layer might be a ground or power plane, although the device is notelectrically connected to this layer.

O

As with analysis 1 (Section 3.1 on page 7), we can again carry out simulations for various
layer 1 side length “x”, keeping the size of the layer 4 plane constant at 25 mm  25 mm.
The results are shown in Figure 7, together with those from analysis 1 for comparison
purposes.

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001aak930

100
Tj
(°C)

(1)

80

(2)

60

40

20
15

(1) Layer 1 only.
(2) 2-layer.

25
30
Layer 1 side length ''x'' (mm)Device junction temperature versus layer 1 copper side length “x” for the 1 and2-layer PCB stack-ups

LE

Fig 7.

20

TE

10

BS

O

Figure 7 demonstrates that adding the layer 4 copper has significantly improved thethermal performance of the PCB, even though layer 4 is not directly connected to the
MOSFET. We can also see that the MOSFET Tj is now somewhat less dependent onlayer 1 copper area. By adding the second layer we can reduce the top copper side lengthfrom 25 mm  25 mm to approximately 15 mm  15 mm whilst retaining the same thermal
performance (i.e. the same device Tj). This is certainly a useful result if we wish toincrease component density on layer 1!

3.3 Analysis 3: A 4-layer PCB part 1

O

This document will consider several different variations of the 4-layer PCB stack-up. The
simplest of these variations is based on the 2-layer stack-up of analysis 2 (Section 3.2),
with the addition of two additional internal signal layers. It is assumed that the additional
layers would be mainly composed of many thinner signal tracks, rather than large
continuous planes. Detailed simulation of these layers is obviously not feasible, and so a“percentage coverage” method is adopted instead. With this method, the average
conductivity of the structure is calculated based on the percentage of total area covered incopper and the layer thicknesses. For the purposes of these exercises, we will assume
that the signal layers have 50 % copper coverage and are also of 1 oz./ft2 (35 m)
thickness. The 4-layer structure is summarized in Figure 8.

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DEVICE
(1)

(2)

(3)

(1) Layer 1, 35 m, variable area.
(2) Layer 2, 35 m, 50 % coverage.
(3) Layer 3, 35 m, 50 % coverage.

Fig 8.

LE(4) Layer 4, 35 m, 25 mm  25 mm.

TE(4)001aak945

4-layer stack-up for analysis 3, part 1 (not to scale)BSO

As before, we will carry out simulations for various sizes of layer 1 copper, keeping theother layers constant. The results are shown in Figure 9 together with those from theprevious two analyses. Note that there is again no direct connection between the
MOSFET and layer 4 plane, and the corresponding circuit topologies would be thoseshown in Figure 2 on page 8001aak946

100

O

Tj
(°C)

(1)

80

(2)

60
(3)

40

20
10

15

20

25
30
Layer 1 side length ''x'' (mm)(1) Layer 1 only.
(2) 2-layer.
(3) 4-layer.

Fig 9.

AN10874

Application note

Device junction temperature versus layer 1 copper side length “x” for the 1, 2 and4-layer PCB stack-ups
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Adding copper layers 2 and 3 to the design has resulted in a considerable reduction in Tj
compared to the 1 and 2-layer stack-ups. In addition, it can be seen that Tj has become
almost independent of layer 1 copper area. This is a useful result which indicates that, in a
4-layer PCB stack-up similar to that described here, we can reduce the layer 1 copperarea to a minimum without drastically compromising the thermal performance of thedesign. The layer 1 copper area which has been freed up may therefore be used for
mounting other devices, routing tracks, and so on.

3.4 Analysis 3: A 4-layer PCB part 2

TE

The second 4-layer stack-up which will be considered is similar to that of Figure 8, exceptthat layer 2 has been replaced with a plane of 100 % area coverage. This might represent
an internal ground plane. Otherwise, the analysis is the same as that for part 2. The
results are shown in Figure 10.

100
Tj
(°C)

(1)

(2)

60

O

(3)

LE

80

001aak947

(4)

BS

40

20

10

15

20

25
30
Layer 1 side length ''x'' (mm)O(1) Layer 1 only.
(2) 2-layer.
(3) 4-layer.

(4) 4-layer (layer 2 100 % coverage).

Fig 10. Device junction temperature versus layer 1 copper side length “x” for the 1, 2 and4-layer PCB stack-ups, and for the 4-layer stack-up with layer 2 area coverage of
100 %It is interesting to see that increasing the percentage coverage of layer 2 from 50 % to
100 % has yielded little improvement in thermal performance. In other words, an internal
plane is less effective than an external plane in terms of reducing device temperature.
This can be explained by understanding that an external plane is able to lose heat energy
to the external environment by convection and radiation loss from its surface. An internallayer, however, is obviously not exposed to free air (except, perhaps, for a negligible
amount at the plane’s edges) and so the only contribution it makes to improved cooling is
to increase the through-board conductivity of the PCB.

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3.5 Analysis 4: A 4-layer PCB with thermal vias part 1
So far we have considered cases where the layer 1 copper (connected to MOSFET drain)
has not been connected to any other layer. However, it is entirely possible that we would
use a pattern of vias under the MOSFET tab to provide electrical connection with a VCC
plane on layer 4 (for instance). This approach is consistent with the topologies of Figure 2.
As well as providing the necessary electrical connectivity, this arrangement will also
provide an additional thermal pathway away from the MOSFET, whereby the “electricalvias” also function as “thermal vias”.

TE

Whilst it is known that in general terms adding vias under a device will improve its thermal
performance, it can be difficult to know how many vias provide an optimal solution.
Obviously we do not want to add too many vias if they do not significantly improve thermal
performance, as their presence may cause problems during PCB assembly (and, ofcourse, we are paying for every via on the PCB!). The purpose of this analysis is therefore
to examine the impact of various via patterns on the thermal performance of the design.

Table 1.

LE

The analysis in this section will use a layer 1 copper area of side length 15 mm and willconsider via patterns with the characteristics listed in Table 1. In all cases, vias are
0.8 mm diameter and are assumed to be air-cored. PCB stack-up is as Figure 8. An
example via pattern is shown in Figure 11.
Via patterns summarised

Number of vias
x

0

0

20[1]

5

30

5

54

y

O

Total

Via pitch x (mm)Via pitch y (mm)Overall via patterndimensions(mm  mm)

-

-

-

4

2.52

2.05

10.9  7.2

6

2.52

1.33

10.9  7.5

9

6

1.26

1.26

10.9  7.1

63

9

7

1.26

1.26

10.9  8.4

77

11

7

1.04

1.04

11.2  7.1

BS0

See Figure 11.

O[1]

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LFPAK MOSFET thermal design guide10.9 mm

7.2 mmTEy=2.05 mmx=
2.52 mm

Drawing not to scale.

LE

Fig 11. The 5  4 via pattern

001aak948

46.0
Tj
(°C)

45.0

001aak949

BS

44.0

O

The results for the different via patterns are shown in Figure 12.

43.0
42.0
41.0

O

40.0
39.0
38.0
37.0
36.0
35.0

none

20
(5 × 4)30(5 × 6)54(9 × 6)63(9 × 7)77(11 × 7)
number of vias

Fig 12. Device junction temperature versus the number of vias

Figure 12 demonstrates a notable decrease in device Tj when moving from a situation
with no vias under the device to one of 20 vias under the device. This is a clear indicatorthat the heat energy is being conducted from the MOSFET drain tab to layer 4 and isexactly the result we would expect. It is interesting to note, though, that adding
progressively more vias under the device results in little additional decrease in Tj. This isbecause, as we add more vias, so the through-board conductivity of the layout increases.
However, at the same time we are also decreasing the area of contact between device
and PCB as more layer 1 copper is replaced with air. Consequently we do not see much
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improvement in thermal performance. The conclusion we can therefore draw from thisexercise is that adding some vias will improve thermal performance, but continuing to add
more vias will not yield further significant performance improvements.

3.6 Analysis 4: A 4-layer PCB with thermal vias part 2
For completeness, the “4-layer plus vias” structure has also been simulated for several
sizes of layer 1 copper, with the stack-up again as Figure 8 on page 14. The results areshown in Figure 13.

001aak950

100
Tj
(°C)

(1)

TE

80

(2)

60

(4)

40

20

15

O

10

LE

(3)

20

25
30
Layer 1 side length ''x'' (mm)(1) Layer 1 only.

BS(2) 2-layer.
(3) 4-layer.

(4) 4-layer; 5  4 vias.

O

Fig 13. Device junction temperature versus layer 1 copper side length “x” for the 1, 2 and4-layer PCB stack-ups and for the 4-layer stack-up with vias

It can be seen that, once vias are added under the device, Tj becomes almost
independent of top copper area, and is approximately 5 C lower than for the 4-layer
stack-up without vias.

3.7 Summary: factors affecting the thermal performance of a single
device• For a device mounted on a 1-layer PCB, device Tj depends heavily on copper area.
However, the “law of diminishing returns” applies and simply adding more and morelayer 1 copper does not yield commensurate improvements in thermal performance(see Figure 3). The lowest achievable Tj, with a large copper area, would beapproximately 50 C.

• Varying the size of the PCB FR4 does not significantly influence device Tj if thecopper connected to drain is kept at a constant size. Similarly, adding unconnected
copper areas onto an extended FR4 area also does not significantly influences Tj (seeFigure 4).

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LFPAK MOSFET thermal design guide• Adding a second copper layer (layer 4) provides a significant improvement in thermal
performance and reduces the dependence of Tj on layer 1 copper area (see Figure 7).

• Moving to a 4-layer PCB stack-up again provides a significant improvement in thermal
performance compared to 1- and 2-layer stack-ups. In addition, the dependence of Tj
on layer 1 copper area is further reduced (see Figure 9 and Figure 10).

• Adding vias under the device provides a further improvement in thermal performance,but once again the law of diminishing returns applies, whereby adding more and morevias yields little significant benefit (see Figure 12).

• With vias under the device, the dependence of Tj on layer 1 copper area is almost
eliminated (see Figure 13).

TE

The single device configuration with 15 mm  15 mm top copper and 20 vias will be used
as a building block in the analyses presented in the following sections (Section 4.1 on
page 20 to Section 5.4 on page 32).

4. Two LFPAK devices

O

LE

Section 3 considered the thermal performance of a single device mounted on a section of
PCB. The next level of complexity in this analysis is that of two devices mounted on a
PCB, where we will observe the effect of device separation on Tj. In order to restrict the
number of variables to a sensible limit we will consider only the 15 mm  15 mmside-length area for layer 1. However, the PCB size has been increased to
120 mm  80 mm to allow more scope for investigating different device separation
distances. As before, we will begin with the simple 1-layer stack-up and then progressively
add layers to the board.

OBSThe PCB top copper configuration is shown in Figure 14.

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LFPAK MOSFET thermal design guidedevice spacing ''d''

Cu

Cu

15 mm

15 mm

80 mm

LE

TE

FR4

120 mmO

001aak951

Fig 14. PCB top copper configuration for the analysis of two devices

O

BS

Simulation were carried out to investigate the influence of “d” on device Tj for the various
PCB stack-ups. Values of d varied from 100 mm (maximum separation, devices mounted
near the PCB edges, as shown in Figure 14) to 20 mm, where there was only a 5 mm gap
between the device layer 1 copper areas value.

4.1 Analysis 5: A single-layer PCB
The results for the single-layer simulations are shown in Figure 15. As the placement of
the devices is symmetrical about the board centre line, regardless of d, the thermal
performance of both devices is almost identical and so the Tj figure may be taken to be for
either device. Tj for a single device, mounted near the PCB edge, is also shown.

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001aak952

80
(1)
(2)

Tj
(°C)
60

40

20
40

80
120
Device spacing ''d''; center to center (mm)TE

0(1) Layer 1 only.
(2) Single device.

LE

Fig 15. Simulation results for two devices of varying separation “d” on a single-layer
PCB. The result for a single device mounted at the PCB edge is also shown

BSO

Even though the two devices are mounted on the same PCB, it is interesting to note thatthey perform as almost completely independent units – Tj is largely the same as for the
single device and is not unduly influenced by device separation except for the case where
the devices are mounted closest together (“d” at a minimum). This is a consequence ofthe poor thermal conductivity of the FR4 PCB material which effectively “isolates” the two
devices in most cases, as discussed in Section 3.1.1 on page 9.

4.2 Analysis 6: A 2-layer PCB

O

For the purposes of this exercise we will again consider the same variations in device
spacing as for analysis 5 (see Section 4.1). However for analysis 6 we will add the layer 4(bottom copper) layer covering the whole of the underside of the PCB and thereby
creating a 2-layer stack-up. In practical terms this layer might be a ground or power plane,
although as far as the board thermal performance is concerned it makes no difference as
the devices are not connected to this layer. The results are shown in the graph of
Figure 16 together with those from analysis 5 for comparison purposes.

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001aak953

80
(1)

Tj
(°C)
60
(2)

40

20
40

80
120
Device spacing ''d''; center to center (mm)TE

0(1) Layer 1 only.
(2) 2-layer.

LE

Fig 16. Simulation results for two devices of varying separation “d” on a 2-layer PCBO

Adding the second copper layer has considerably reduced the junction temperatures ofboth devices, as one might expect, and temperature still remains largely independent ofdevice separation.

4.3 Analysis 7: A generalized 4-layer PCBOBSThe 2-layer stack-up of analysis 6 will now be increased to 4 layers with the addition of
two internal signal layers. As before, it is assumed that these layers would be mainlycomposed of many thinner signal tracks, rather than large continuous planes. Simulationof the internal layers will again be by the “percentage coverage” method, with theassumption of 50 % copper coverage and 1 oz./ft2 (35 m) thickness. Layer 4 remains
unconnected to either device, also as before. The 4-layer structure is therefore assummarized in Figure 8. Layer 4 remains a solid plane covering the entire underside area
and junction temperatures are determined for various separation distances “d”. The
results are shown in Figure 17.

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001aak954

80
(1)

Tj
(°C)
60
(2)

(3)

40

20
40

80
120
Device spacing ''d''; center to center (mm)TE

0(1) Layer 1 only.
(2) 2-layer.

LE(3) 4-layer.

Fig 17. Simulation results for two devices of varying separation “d” on a 4-layer PCBO

The addition of the two internal layers results in curve of similar shape to the 2-layer
stack-up but with an overall reduction in Tj of approximately 10 C.

4.4 Analysis 8: A 4-layer PCB with thermal vias part 1OBSIn analyses 8 and 9 we will consider cases where the layer 1 copper (connected to
MOSFET drains) is connected to layer 4 by thermal/electrical vias of the 5  4 via patterndescribed in Section 3.6. The layer 4 copper area will be reduced to two 15 mm  15 mm
planes, with a plane connected to each MOSFET. When using vias to connect one ormore layers together for thermal reasons, we must also consider the implications forcircuit topology and layer stack-up. For the configuration examined in this section, thepossible circuit topologies are shown in Figure 18.

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(1)

(1)

(1)

VBAT1
D

D

D

Q1

G

VCC

VBAT2

Q2

G

S

Q1

G
S

S
(1)

D

Q2

G

TE

S
001aak955(1) Plane available for coolinga. High-side load switches

0V
001aak956

b. Half bridge configurationLE

Fig 18. Possible circuit configurations for two MOSFETs with independently connecteddrainsO

BSO

Figure 18 demonstrates two possible circuit configurations for two MOSFETs withindependently connected drains. Figure 18(a) shows two high-side load switches
connected to different supply (VBAT) lines – a common automotive configuration.
Figure 18(b) we have the two MOSFETs connected in a half-bridge configuration typical ofa unidirectional motor drive controller or DC-DC buck converter circuit. In both cases, the
MOSFET drains do not share a common electrical connection. The modified layer
stack-up corresponding to these topologies is shown in Figure 19.

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DEVICE
(1)

(2)

VIAS

(3)

(1) Layer 1 (power).
(2) Layer 2 (ground).
(3) Layer 3 (signal).

LE(4) Layer 4 (power and signal).

TE(4)001aak957

Fig 19. Modified 4-layer stack-up (not to scale)

O

BS

O

The stack-up of Figure 19 shows the ground plane on layer 2 with the device drain
connected to areas on both layer 1 and layer 4, and with the layer 4 copper now also asquare of dimensions 15 mm  15 mm. Layer 3 remains a signal layer. Both MOSFETs
are configured in this way, and once again we investigate the influence of separation
distance “d” on device Tj. The results are shown in Figure 20, together with those for theprevious analyses.

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001aak958

80
(1)

Tj
(°C)
60
(2)

(3)

40

(5)

(4)

20
40

80
120
Device spacing ''d''; center to center (mm)TE

0(1) Layer 1 only.
(2) 2-layer.

LE(3) 4-layer.

(4) 4-layer with vias, separate drains.
(5) Half-bridge configuration.

O

Fig 20. Simulation results for two devices of varying separation “d” on a 4-layer PCB with
vias

BS

Clearly the addition of vias under the devices results in a further decrease in Tj eventhough the layer 4 copper area is reduced. Once again we see that Tj has little
dependence on device spacing.

O

Also shown in Figure 20 is the result for the two devices positioned in a “half-bridge
configuration”. This refers to the circuit topology of see Figure 18(b), where it makes
sense from an electrical point of view to position the devices one above the other rather
than side by side. In this way, the source connection of Q1 is physically close to the drain
connection of Q2 and connection between the two would be by a short, low inductancepath. See Figure 21.

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15 mm

Cu

15 mm

S S S G

4 mm

TE

Q1

LE

D

O

Cu

BS

Q2

001aak959

Fig 21. Two devices logically positioned for a half-bridge configuration

O

4.5 Analysis 8: A 4-layer PCB with thermal vias part 2
The second analysis will consider two devices sharing a common drain connection. This
would correspond to the topology of Figure 18(a) with a common VBAT line. The VBAT line
is represented by a plane measuring 25 mm  120 mm on layer 4, with vias as per theprevious analysis. Results are shown in Figure 22.

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001aak960

80
(1)

Tj
(°C)
60
(2)

(3)

40

(4)
(5)

20
40

80
120
Device spacing ''d''; center to center (mm)TE

0(1) Layer 1 only.
(2) 2-layer.

LE(3) 4-layer.

(4) 4-layer with vias, separate drains.

(5) 4-layer with vias and common VBAT plane.

O

Fig 22. Simulation results for two devices of varying separation “d” on a 4-layer PCB withvias and common VBAT planeBSThe improvement in thermal performance is practically negligible compared to theprevious example (Section 4.4) with independent drain copper areas.

4.6 Summary: factors affecting the thermal performance of two devices
To reiterate, the following results were obtained with layer 1 copper side lengths of 15 mm.

O• For two devices mounted on a single-layer PCB, device Tj is largely independent ofdevice spacing “d”. A significant increase in Tj vis only observed when the devices aremounted very close together. There is also little difference compared to the single
device case (see Figure 15). Device Tj is approximately 71 C• Adding a second copper layer (layer 4) reduces Tj by roughly 20 C to 25 Ccompared to the single-layer case. Some minor dependence of Tj on “d” is apparent,with slightly higher Tj occurring when the devices are mounted closest together or at
the PCB edges (see Figure 16)• Moving to a 4-layer PCB stack-up yields a further reduction in Tj of ~9 C compared to
the 2-layer design (see Figure 17)• Adding a 4  4 pattern of vias under the devices provides a further small improvementin thermal performance, whereby Tj is reduced by an additional ~4 C (see pcb)

• Making the device layer 4 copper areas common, rather than separate, has almost no
effect on device Tj (see Figure 22)

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5. Four LFPAK devices
In this final section the number of devices will be increased to four. We will adopt the same
PCB size as for the analyses in Section 4 on page 19, and a similar approach in building
up the PCB stack-up from a simple structure to one which is more complex. As before, inorder to restrict the number of variables to a sensible limit we will consider only the 15 mmside-length area for layer 1. This section will mainly concentrate on the four devices
equally spaced apart in a single line (see Figure 23), but will also consider two of the “halfbridge” configurations described in Section 4.3 on page 22.
The PCB top copper configuration is shown in Figure 23.

device spacing ''d''

15 mm

Cu

Cu

Cu

LE

Cu

device spacing ''d''TEdevice spacing ''d''

80 mm

O

BS

O

15 mm

FR4

120 mm001aak961

Fig 23. Four devices: PCB top copper configuration

Simulation were carried out to investigate the influence of “d” on device Tj for the various
PCB stack-ups. Values of d varied from 34 mm (maximum separation, as shown in
Figure 23) to 20 mm where there was only a 5 mm gap between the device layer 1 copperareas.

5.1 Analysis 9: A single-layer PCB
The results for the single-layer simulations are shown in Figure 24. Unlike the analyses of
two devices in the previous section, the thermal environment is not exactly the same for
all four devices in this configuration. The two inner devices are at a slight disadvantage as
they have additional heat sources on both their left- and right-hand sides, whilst the outerdevices have a heat source on one side only. In the worst case, this results in a difference
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LFPAK MOSFET thermal design guidein Tj value of approximately 3 C between inner and outer devices. In the interests ofpresenting a conservative set of results, the graphs which follow show the temperatures
for the inner, slightly hotter, devices.

001aak962

80
(1)

Tj
(°C)
60

20
20

(1) Layer 1 only.

25

30
35
Device spacing ''d''; center to center (mm)

LE

15

TE

40

Fig 24. Simulation results for four devices of varying separation “d” on a single-layer
PCB

BS

O

Again, we see the law of diminishing returns exhibited in these results: as the spacing
between devices increases, so the curves flattens out. Therefore, increasing the centre –center spacing beyond approximately 30 mm would have little influence on device
temperatures.

5.2 Analysis 10: A 2-layer PCB

O

For the purposes of this exercise we will again consider the same variations in device
spacing as for analysis 9. However for analysis 10 we will add the layer 4 (bottom copper)
layer covering the whole of the underside of the PCB and thereby creating a 2-layer
stack-up. In practical terms this layer might be a ground or power plane, although it
remains unconnected to the devices. The results are shown in the graph of Figure 25
together with those from analysis 9 for comparison purposes.

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001aak963

80
(1)

Tj
(°C)
60
(2)

40

20
20

25

30
35
Device spacing ''d''; center to center (mm)TE

15(1) Layer 1 only.
(2) 2-layer.

LE

Fig 25. Simulation results for four devices of varying separation “d” on a 2-layer PCBO

Adding the second copper layer increases the thermal conductivity of the PCB andreduces device temperatures by approximately 20 C. This is exactly the result we would
expect and is in keeping with the results for the one and two-device configurations.

5.3 Analysis 11: A generalized 4-layer PCBOBSThe 2-layer stack-up of analysis 10 will now be increased to 4 layers with the addition of
two internal signal layers. The signal layers are assumed to be composed of numerous
thin signal tracks, and simulation of the internal layers will again be by the “percentage
coverage” method, 50 % copper coverage and 1 oz./ft2 (35 m) thickness. Layer 4
remains a solid unconnected plane covering the entire underside area. See Figure 8.
Junction temperatures were determined for various separation distances d and the results
are shown in Figure 26.

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001aak964

80
(1)

Tj
(°C)
60
(2)

(3)

40

20
20

25

30
35
Device spacing ''d''; center to center (mm)TE

15(1) Layer 1 only.
(2) 2-layer.

LE(3) 4-layer.

Fig 26. Simulation results for four devices of varying separation “d” on a 4-layer PCBO

Adding the internal signal layers has resulted in an overall reduction in Tj of approximately
8 C.

5.4 Analysis 12: A 4-layer PCB with thermal vias part 1OBSIn analysis 12 we will consider cases where the layer 1 copper areas (connected to
MOSFET drains) are connected to 15 mm  15 mm copper areas on layer 4 bythermal/electrical vias of the 5  4 pattern described in Section 3.5 on page 16. The
corresponding circuit topologies are as shown in Figure 18, but for twice the number ofdevices. We could therefore have four high-side load switches connected to four different
VBAT lines (Figure 18(a)). Alternatively we could have two of the half-bridge topologies
shown in Figure 18(b). For either possibility, each MOSFET’s drain connections are
independent, and layer 2 in the PCB stack-up is a full-coverage ground plane (seeFigure 19).
For the four high-side load switches we will vary the spacing between devices as inanalyses 9 to 11. In the case of the two half-bridges, however, we can consider eachhalf-bridge as a single “unit”, and examine the effect of varying the spacing between
half-bridge units. See Figure 27). The results are shown in Figure 28.

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LFPAK MOSFET thermal design guidedevice spacing ''d''

Cu

Cu

Cu

Cu

15 mm

80 mm

TE

15 mm

LE

FR4

120 mmO

001aak965

BS

Fig 27. Four devices positioned as two half-bridges configurations
80

001aak966

(1)

Tj
(°C)

O

60

(2)

(3)
(4)

40

(5)

20
15

20

25

30
35
Device spacing ''d''; center to center (mm)(1) Layer 1 only.
(2) 2-layer.
(3) 4-layer.
(4) 4-layer with vias, half-bridge configuration.
(5) 4-layer with vias, separate drains.

Fig 28. Simulation results for four devices of varying separation “d” on a 4-layer PCB with vias

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Adding vias under the devices results in an overall reduction in Tj of approximately 4 C
to 5 C for both topologies.

5.5 Analysis 12: A 4-layer PCB with thermal vias part 2
The final analysis will consider four devices sharing a common drain connection. This
would correspond to the topology of Figure 18(a) with a common VBAT line. The VBAT line
is represented by a plane measuring 25 mm  120 mm on layer 4, and stack-up is as
Figure 19. The results are shown in Figure 29.

001aak967

80
(1)

Tj
(°C)

TE

60

(2)

(3)
(4)

40

LE

(5)

20

20

O

15

25

30
35
Device spacing ''d''; center to center (mm)(1) Layer 1 only.

BS(2) 2-layer.
(3) 4-layer.

(4) 4-layer with vias, separate drains.
(5) 4-layer with vias and common VBAT plane.

O

Fig 29. Simulation results for four devices of varying separation “d” on a 4-layer PCB
with vias and common VBAT plane

Connecting the four devices does make a small difference to Tj when the devices areclose together, however as “d” increases the effect tends to diminish.

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LFPAK MOSFET thermal design guide5.6 Summary; factors affecting the thermal performance of four devices
For layer 1 copper side lengths of 15 mm.

• For four devices mounted on a single-layer PCB, device Tj is somewhat independentof device spacing “d”. The inner two devices tend to run slightly hotter, byapproximately 3 C in the worst case. Device Tj is approximately 72 C (seeFigure 24)• Adding a second copper layer (layer 4) reduces Tj by roughly 20 C compared to thesingle-layer case (see Figure 25)• Moving to a 4-layer PCB stack-up yields a further reduction in Tj of ~8 C compared to
the 2-layer design (see Figure 26)• Adding a 4  4 pattern of vias under the devices provides a further small improvementin thermal performance, whereby Tj is reduced by an additional ~4 C (see Figure 28)
on device (see Figure 29)

6. SummaryTE• Making the device layer 4 copper areas common, rather than separate, has little effect

BS

O

LE

Increasingly there is a need to pay attention to the thermal aspects of PCB design, inorder that safe operating temperatures are not exceeded. For designs employing
surface-mount power MOSFETs, which use the PCB as their primary method ofheatsinking, it is important that both MOSFET junction temperature (Tj) and PCB
temperature (TPCB) are kept within safe limits. Typically the maximum permissible Tj figure
is 175 C whilst the maximum TPCB figure may be 120 C. As there is close thermal
coupling between the MOSFET device and the PCB to which it is soldered we can saythat TPCB  Tj and so the operating temperature upper limit is that of the PCB (120 C)rather than the MOSFET junction.

O

The PCB designer may be faced with a lack of useful resources when attempting to lay
out a PCB for “safe” thermal operation. At one extreme, the MOSFET data sheet Rth
figures are too vague to be of use and will probably have been measured under conditions
which differ greatly from those of his target application. At the other extreme, a detailed
analysis of the thermal performance of a design may be carried out using simulation
software and/or actual prototype build. Simulation software can give excellent results in a
relatively short space of time, but is generally expensive and its use has a steep learning
curve. Prototype build, on the other hand, will almost certainly be required at some stage
in the product development, for design verification, but is an expensive andtime-consuming option in the early stages of the design cycle. There is therefore a needfor thermal design guidelines, which bridge the gulf between the less-than-helpful Rth
figures at one extreme and full prototype simulation or build at the other, and which may
be employed at an early stage in the PCB design in order to steer the designer in the right
direction. The purpose of this document is to provide those guidelines for designs
employing the NXP Semiconductors range of LFPAK MOSFETs
This design guide has considered the thermal performance of a variety of different PCB
configurations and stack-ups for one, two and four MOSFET devices. Factors which havebeen considered include; PCB layer stack-up, the influence of common circuit topologies
on PCB layout, PCB copper area, the influence of thermal “vias”, device placement andspacing and the implications of multiple dissipating devices on a single PCB. This

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document cannot hope to address all the myriad possible device usages, however it ishoped that the chosen range of different configurations is representative of typical “reallife” device usage.
Finally, we should reiterate again that the information contained within this design guide ispresented as a starting point only. Any new design should of course be prototyped and its
thermal behavior characterized before placing the design into production.

7. Abbreviations
Table 2.

Abbreviations

AcronymDescription

EMC

ElectroMagnetic Compatibility
Loss-Free Package

MOSFET

Metal-Oxide Semiconductor Field-Effect Transistor

PCB

Printed-Circuit Board

SMD

Surface-Mounted Device

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8. Legal information
Definitions

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences ofuse of such information.

8.2

Disclaimers

Limited warranty and liability — Information in this document is believed tobe accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy orcompleteness of such information and shall have no liability for theconsequences of use of such information.

NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in thecustomer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications andthe products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a priorauthorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, impliedor statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of thisproduct remains with customer.

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In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications andproducts planned, as well as for the planned application and use ofcustomer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with theirapplications and products.

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8.1

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of NXP Semiconductors.

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Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, businessinterruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.

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Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product

AN10874

Application note

Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above andall direct or general damages), the entire liability of NXP Semiconductors, itsaffiliates and their suppliers and customer’s exclusive remedy for all of theforegoing shall be limited to actual damages incurred by customer based onreasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicablelaw, even if any remedy fails of its essential purpose.

8.3

Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 27 January 2011

© NXP B.V. 2011. All rights reserved.

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Rev. 02 — 27 January 2011

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Application note

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Rev. 02 — 27 January 2011

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9. Contents

4
4.1
4.2
4.3
4.4
4.5
4.6
5
5.1
5.2
5.3
5.4
5.5
5.6
6
7

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37
37
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3.7

Legal information . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . .
Licenses. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Patents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . .
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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3.6

8
8.1
8.2
8.3
8.4
8.5
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3
3.1
3.1.1
3.2
3.3
3.4
3.5

Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
The need for thermal analysis . . . . . . . . . . . . . 3
MOSFET Rth parameters and their limitations . 3
Aim of this document . . . . . . . . . . . . . . . . . . . . 4
General approach to thermal analysis. . . . . . . 5
The use of thermal simulation software . . . . . . 5
Simulation set-up . . . . . . . . . . . . . . . . . . . . . . . 5
PCB layout and stack-up . . . . . . . . . . . . . . . . . 6
Factors influencing, PCB layout and stack-up . 6
Circuit topology . . . . . . . . . . . . . . . . . . . . . . . . . 6
Design for ElectroMagnetic Compatibility(EMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
A single LFPAK device . . . . . . . . . . . . . . . . . . . 7
Analysis 1: A single-layer PCB . . . . . . . . . . . . . 7
The role of FR4 size in analysis 1. . . . . . . . . . . 9
Analysis 2: 2-layer PCB . . . . . . . . . . . . . . . . . 11
Analysis 3: A 4-layer PCB part 1 . . . . . . . . . . 13
Analysis 3: A 4-layer PCB part 2 . . . . . . . . . . 15
Analysis 4: A 4-layer PCB with thermal
vias part 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Analysis 4: A 4-layer PCB with thermal
vias part 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Summary: factors affecting the thermal
performance of a single device. . . . . . . . . . . . 18
Two LFPAK devices . . . . . . . . . . . . . . . . . . . . . 19
Analysis 5: A single-layer PCB . . . . . . . . . . . . 20
Analysis 6: A 2-layer PCB . . . . . . . . . . . . . . . 21
Analysis 7: A generalized 4-layer PCB . . . . . . 22
Analysis 8: A 4-layer PCB with thermal
vias part 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Analysis 8: A 4-layer PCB with thermal
vias part 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Summary: factors affecting the thermal
performance of two devices . . . . . . . . . . . . . . 28
Four LFPAK devices . . . . . . . . . . . . . . . . . . . . 29
Analysis 9: A single-layer PCB . . . . . . . . . . . . 29
Analysis 10: A 2-layer PCB . . . . . . . . . . . . . . 30
Analysis 11: A generalized 4-layer PCB . . . . . 31
Analysis 12: A 4-layer PCB with thermal
vias part 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Analysis 12: A 4-layer PCB with thermal
vias part 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Summary; factors affecting the thermal
performance of four devices . . . . . . . . . . . . . . 35
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 36

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1
1.1
1.2
1.3
2
2.1
2.2
2.3
2.3.1
2.3.2
2.3.3

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

© NXP B.V. 2011.

All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 January 2011
Document identifier: AN10874