SD-MSS-1K series
Device information
SD-MSS-1KTM

SD-MSS-1KPMAl

SD-MSS-1KPMAu

for Torque Magnetometry in DC/Pulsed Field

Version 1.2

Specifications

Features

SD-MSS-1KTM▪ Reasonable chip size for comfortablehanding▪ Easy socket connection▪ Possibility of changing structure bybreaking beams

SD-MSS-1KPMAl

SD-MSS-1KPMAu▪ Compact chip size for tight mounting space▪ Platform with coil
▪ Two individual piezoresistive cantilevers▪ 3 reference resistors▪ Aluminum pads (SD-MSS-1KPMAl),
Gold pads (SD-MSS-1KPMAu)

Handling of chips
To remove the chip from gel sheet, it is recommended to use a sharp plastic tweezers.
(1) Carefully push the tips of tweezers into the gel sheet, like tocreate a little space in between the chip back and the gelsheet. Don’t clamp the chip at this step.
(2) Slowly move the tips laterally and clamp the chip. Carefully
pick up the chip.

Example: SIPEL 1315-SA

If the tips are too sharp, make them blunt.
TAkDevice layout

SD-MSS-1KPMAl

SD-MSS-1KPMAu

Piezoresistive
cantilever 400 μm
Torsional platform
with coil
Piezoresistivecantilever 120 μm

Referencesresistors

Device layout

SD-MSS-1KPMAl

SD-MSS-1KPMAu
Piezoresistive
cantilever 120 μm

Coil for calibration

Piezoresistive
cantilever 400 μm

Dimensions

SD-MSS-1KPMAl

0.13

SD-MSS-1KPMAu

1.17

3.0
0.13

The chip thickness isapproximately 0.3 mm.
0.77
0.4

Approximate values, Unit [mm]
0.18

0.24

0.79
2.0

Dimensions

SD-MSS-1KPMAl

Piezoresistor

418

SD-MSS-1KPMAu

Al electrodes

Silicon nitride

24~5200

Current to coil

Coil length: 700 μm

436436

Silicon35200

Piezoresistor

418

Approximate values
Unit [μm]Connection for the platform

SD-MSS-1KPMAl
SD-MSS-1KPMAu

V-BRIDGE

C1 R3 P1 R1R1R2+C1 C2P1 P2
R1 R2 R3P1All piezoresistors are identical.

P2C2 R2 P2If the potential of the silicon part should be0V, the bridge voltage must be negative (VBRIDGE< 0V).
This is because the piezoresistors are ptype diffusions on n-type substrate and thepotential of the silicon part becomes thehighest potential available on the chip.

Connection for the cantilevers

SD-MSS-1KPMAl
SD-MSS-1KPMAu

400 μm120 μm

V-BRIDGE

V-BRIDGE

C1 R3 P1 R1R3R2R

R+C1 C2P1 P2
R1 R2 R3C1All piezoresistors are identical.

R+C2R

C2 R2 P2
R: external resistor
If the potential of the silicon part should be0V, the bridge voltage must be negative (VBRIDGE< 0V).
This is because the piezoresistors are ptype diffusions on n-type substrate and thepotential of the silicon part becomes thehighest potential available on the chip.

Device layout

SD-MSS-1KTM1036
200

40400120120

Typical thickness: 2.8 μm

24

Typical application

SD-MSS-1KTM

Working images

Torsional axis
Bending axis

P1P3P2P4

Dimensions

SD-MSS-1KTM
Al electrodes

1.05
A

A’A’

A

nitride
oxide

1.34

Siliconoxide

5.5

Silicon
oxide

0.35

nitride

0.18
0.25

0.5
0.5

0.5

Cross-section

2.5

The chip thickness is approximately 0.3 mm.
Approximate values, Unit [mm]Contacts and connector 1SD-MSS-1KTM

5 pin

P1
P4

P3

V-BRIDGE①②③④⑤

R~0.5 mm

Rnarrow
gap+P1

P2P24 pin①②③
④narrowgap

R: external resistor

narrowgap

Not possibility to connect P3 and P4

If the potential of the silicon beams should
be 0V, the bridge voltage must be negative(V-BRIDGE< 0V).
This is because the piezoresistors are ptype diffusions on n-type substrate and thepotential of the silicon part becomes thehighest potential available on the chip.

Contacts and connector 2SD-MSS-1KTM
V-BRIDGE

P1

5 pin

P4P3RR+①②③④⑤

P2P3~0.25 mm

P4~0.25 mm
R: external resistor
If the potential of the silicon beams should
be 0V, the bridge voltage must be negative(V-BRIDGE< 0V).
This is because the piezoresistors are ptype diffusions on n-type substrate and thepotential of the silicon part becomes thehighest potential available on the chip.

Contacts and connector 3

SD-MSS-1KTM
V-BRIDGE

P1
P4

P3

P1

P2

All pads have to be connectedby e.g., wire bonding.
P2+P4

P3

If the potential of the silicon beams should
be 0V, the bridge voltage must be negative(V-BRIDGE< 0V).
This is because the piezoresistors are ptype diffusions on n-type substrate and thepotential of the silicon part becomes thehighest potential available on the chip.

Commercial connectors

SD-MSS-1KTM
The following connectors are recommended for Torque Magnetometry applications.
❑ Molex 54550 series, e.g., 54550-0471 (4 pin), 54550-0571 (5 pin) : Front slider type. Not simple to fix thechip, but the chip can be strongly clamped. The alignment between the pads on the chip and the connector
pins is highly visible. The size of the connector is relatively big.
http://www.digikey.ch/product-detail/en/molex-llc/0545500471/WM8825CT-ND/3197255❑ Panasonic Y5B series, e.g., AYF530535A (5 pin) : Back rotary clamp, easy to mount the chip. However, thechip is not strongly clamped compared to the connector mentioned above, which may be problematic insome applications. A big advantage is its compact size.

https://www.digikey.ch/products/en?keywords=255-5520-nd❑ Hirose FH34(S) series, e.g., FH34S-4S-0.5SH (4 pin) : Back rotary clamp, easy to mount the chip. Thisconnector has almost the same features as Panasonic one.
http://www.digikey.ch/product-detail/en/hirose-electric-co-ltd/FH34S-4S-0.5SH(50)/HFT104TR-ND/2033607❑ Other bland are of course usable if the following conditions are met.

• FPC (Flexible Printed Circuit)/ FFC (Flexible Flat Cable) connectors• 0.5 mm pitch• For 0.3 mm-thick cable• Top, or top&bottom, contact

User options (Examples)

SD-MSS-1KTM

Please do this option at your own risk.

Breaking (cutting) out of beams by FIB (focusedion beam) or manual manipulator with sharp
needle.

400 μm120 μmTips for breaking beams

SD-MSS-1KTM

Manual breaking of beams is very challenging. However,it’s very convenient in some cases and save time.

❑ Place the chip up-side-down on a rough and hard surface,e.g., back surface of a single-side-polished silicon wafer.
❑ Use a sharp needle (e.g., oiler for watchmaker) and poke abeam.

Original~250 μm

Result (the needle apex for comparison)
Bergeon 30102-A Oiler (can be purchased on ebay)(Polishing the flat part of the apex with oil-stone enhances the edge sharpness.)

Contact

NANOSENSORS™
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Switzerlandphone: +41 (0)32 552 15 21
fax: +41 (0)32 552 15 22
e-mail: info@nanosensors.com
https://mss-sensor.com
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