Elite Power Simulator
Powered byUser Guide

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Public Information© onsemi 2024

Outline of User Guide

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1

Introduction to the Elite Power Simulator:
What is it and What are the benefits

2Simulator Access3

Step by Step Tool Flow

Public Information© onsemi 2024

Outline of User Guide

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1

Introduction to the Elite Power Simulator:
What is it and What are the benefits

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Simulator Access3

Step by Step Tool Flow

Public Information© onsemi 2024

onsemi’s online Elite Power Simulator Powered by• PLECS is a system level simulator that facilitates the modeling and simulation ofcomplete systems with optimized device models for maximum speed and accuracy.
PLECS is not a SPICE-based circuit simulator, where the focus is on low-level
behavior of circuit components .
• Power transistors are treated as simple switches that can be easily configured todemonstrate losses associated with conduction and switching transitions.
• The PLECS models, referred to as “thermal models”, are composed of lookup tables
for conduction and switching losses, along with a thermal chain in the form of aCauer or Foster equivalent network.
• During simulation, PLECS interpolates and/or extrapolates using the loss tables toget the bias point conduction and switching losses for the circuit operation.
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Elite Power Simulator Features
Broad Range
Of CircuitTopologies

Corner
Simulation
Capability

Covering DC-DC, AC-DC, and DC-AC
applications, including 32 circuit topologies inindustrial (DC fast charging, UPS, ESS, solar
inverters), automotive (OBC, traction), and nontraction spaces

onsemi’s PLECS models go beyond
nominal data from datasheets to include
based on physical correlations in tindustryfirst corner simulation he manufacturing
environment.

SoftSwitching
Simulation

CustomPLECSModelLoss
Plotting

onsemi provides industry first PLECS models
valid for soft switching applications such as
DC-DC LLC and CLLC Resonant, Dual Active
Bridge, and Phase Shifted Full Bridge.

Explore device conduction loss, switchingenergy loss, and thermal impedance in a
multifunctional 3D data visualization utility.

Interface with onsemi’s industry firstSelf-Service PLECS Model Generator(SSPMG) to simulate with models tailoredto your application.

Flexible
Design &FastSimulations
Flexible to capture adjustments to various
attributes such as, gate drive impedance,cooling designs, and load profiling.

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onsemi’s State-of-the-Art PLECS Models• Typical industry PLECS models are composed of measurement-based loss tables that areconsistent with datasheets provided by the manufacturer.
There are four major problems with this approach:1.

The switching energy loss data is dependent on the parasitics of the measurements set ups and circuits.

2.

The conduction and switching energy loss data is limited and thus is often not dense enough to ensure
accurate interpolation and minimal extrapolation by PLECS.

3.

The loss data is based on nominal semiconductor process conditions only.

4.

The switching energy loss data comes from datasheet double pulse generated loss data. This means thePLECS models are only valid for hard switching topology simulation. The models are highly inaccurate if
used in soft switching topology simulation.

• onsemi’s Self-Service PLECS Model Generator (SSPMG) provides solutions to all fourproblems.
• Ultimate power is delivered to the user to build PLECS models tailored for the user’s
application. Unleash the power here: www.onsemi.com/self-plecs-generator
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Mixing onsemi SPICE expertise andonsemi power products inyour own environment

Application/Systemsimulation withonsemi power products

With onsemi
Physical&Scalable
SPICE
Models7powerPublic Information© onsemi 2024

Corner PLECS Models• Conventional PLECS models based on measurements are only valid for the typical or nominal process case in
manufacturing. onsemi has developed accurate corner PLECS models based on real manufacturing distribution.
• Physics dictates that worst case conduction and switching losses do not happen simultaneously for example.
• Depending on the application, the influence of conduction and switching energy losses on the overall system
performance will vary. The onsemi corner PLECS models provide the user the flexibility to investigate the entire
correlated space.
• Corner models currently available for EliteSiC and T10M 40V products. More T10 and FS7 IGBT corner models
are coming soon.
• Accurate corner and statistical modeling covered in detail in− SiC MOSFET Corner and Statistical SPICE Model Generation – Proceeding of International Symposium on Power
Semiconductor Devices and ICs (ISPSD), pp. 154-147, September 2020
Process Condition

RDSon, Vth, BV

Capacitance,Device RG

Conduction
Loss

Switching Energy
LossNominalNominalNominalNominalBest Case Conduction Loss, Worst Case
Switching Loss

Low

HighLowHigh

Worst Case Conduction Loss, Best Case
Switching Loss

HighLow

HighLow

Nominal8Public Information© onsemi 2024

onsemi provides industry first Full
Switching PLECS models valid for hard,
soft, and partial soft switching including
Synchronous Rectifier Operations. ExampleFull Switching topologies include DC-DC
LLC and CLLC Resonant, Dual ActiveBridge, and Phase Shifted Full Bridge.
*The Double Pulse Test is NOT representative of SoftSwitching. Using double pulse switching energy losses in thesimulation of a Soft Switching Topology is highly inaccurate.
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Soft Switching

Full Switching Simulation*Hard Switching

Full Switching Energy Losses

Outline of User Guide

101

Introduction to the Elite Power Simulator:
What is it and What are the benefits

2Simulator Access3

Step by Step Tool Flow

Public Information© onsemi 2024

Access Elite Power Simulator with MYON Account
MYONLogin

MyON is required to use the Elite Power Simulator

Returning UserFirst Time User

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Access Through Direct Link or Product Page
In addition to direct access to the Elite Power Simulator
www.onsemi.com/elite-power-simulator
Access is available on each EliteSiC, FS7 IGB, and
T10 Si MOSFET Product Page.

Learn more about EliteSiC, FS7 IGBTs, andT10 Si MOSFETs atEliteSiC
Field Stop 7 (FS7) IGBTs
T10 Si MOSFETs

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Outline of User Guide131Introduction to the Elite Power Simulator:
What is it and What are the benefits

2Simulator Access3

Step by Step Tool Flow

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Getting Started
Go to landing pagewww.onsemi.com/elite-power-simulator
and select Simulate Now

Link to Self-Service PLECSModel Generator (SSPMG)

User Guide andDetailed Application Note

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Download complete onsemi
PLECS Models (ThermalDescriptions) for Elite SiC, FS7
IGBTs, and T10 Si MOSFETs

Public Information© onsemi 2024

Step 1: Select Application and Topology
Application choice filters the available topologies

Topologiesgrouped byconverter class

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Public Information

Basic circuit schematic displayed© onsemi 2024

Elite Power Simulator Topologies & Applications
All major topologies are available :New Topologies
available with T10

onsemi.com products available are:
• EliteSiC Discretes and Modules• Field Stop 7 IGBTs• T10 Medium Voltage Silicon MOSFETs
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Step 2: Select Device
Circuit image toggles based on
MOSFET or IGBT choice
Inputs used to filter
valid devices

Choose Device Type (Varies Depending on Topology)
Select device to move onto next step

Direct datasheet download
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Step 3: Configure Device
Link to product page

Set parallel devices

Set circuit RG

Set device
process corner condition

Upload custom PLECS model from onsemi’s
Self-Service PLECS Model Generator(SSPMG)

View loss and thermal data

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View Device Loss Data

Toggle on/off
temperatures in 3D plot

Select MOSFET,
IGBT, or Body
DiodeInteractive 3D plot
Toggle table datawith temperature

View loss data

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View Device Thermal DataView thermal chain

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Step 4: Configure Circuit Parameters

Set Circuit parameters, varies by topology

Set modulation scheme, varies by topology

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Step 5: Configure Cooling

Set Thermal interface resistanceConfigure Heat sink as ideal with fixed temperature
or input custom thermal impedance

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Custom Heat Sink Thermal Impedance Utility
Choose Foster or Cauer format
with automatic conversion feature

Up to 5 rungs possible

Toggle log/linear Y axis
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Step 6a: Run Simulation
Detailed temperature, loss, andefficiency reported

Pivot table,
export csv

LaunchSimulation

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Step 6b: View Plots

Zooming and cursor features

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Step 6c: Compare Multiple Simulation Cases
Go back to steps 2, 3, 4, or 5
to make changes

Compare• Device Selection• Device Configuration
 Corner process loss data
 SSPMG Model• Circuit Parameters• Cooling

Compare Results

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Step 7: Review Summary Table

CSV DownloadHighlight rows to be print or downloaded to CSV

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Load Profile Simulation• Load profile simulation
enables power and thermal
estimations at multiple, userdefined operating points• Simple intuitive flow
Topologies with Load Profiling
NPC inverter (1 phase, 3 level)
NPC inverter (3 phase, 3 level)
T-Type inverter (1 phase, 3 level)
T-Type inverter (3 phase, 3 level)
ANPC inverter (1 phase, 3 level)
ANPC inverter (3 phase, 3 level)
Inverter (3 phase, 2 level, grid load)
Inverter (3 phase, 2 level, motor load)
Traction Inverter (3 phase)
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Load Profile
Setup

Set up parameter profiles
Linearramping
whensteppedchanges notenabled

Set up time intervals

Add orsubtract
timeintervals
Real time plotting ofload profile
parameters forinspection before
launching simulation

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Load Profile Simulation

Mission Profile
simulation button isenabled (orange)
when any circuit
parameter is enabledwith a load profile

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Example Load Profile Simulation Results

Junction Temperature
Losses can be tracked over the load profile
by enabling the cursor
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Questions?
Have questions, comments, or need support with your Elite Power Simulator needs? We’rehere to help! Write us an email at elitesim@onsemi.com.
• Self-Service PLECS Model Generator:
www.onsemi.com/self-plecs-generator• Elite Power Simulator:
www.onsemi.com/elite-power-simulator

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Follow Us @onsemi

www.onsemi.com