DATA SHEET
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Silicon Carbide (SiC)
MOSFET - EliteSiC,
23mohm, 650 V, M3S,
D2PAK-7L

V(BR)DSSRDS(ON) TYP

ID MAX

650 V

23 mW @ 18 V

70 A

Drain (TAB)

NTBG023N065M3S

Gate (Pin 1)

Features Typical RDS(ON) = 23 mW @ VGS = 18 V
 Ultra Low Gate Charge (QG(tot) = 69 nC)
 High Speed Switching with Low Capacitance (Coss = 153 pF)
 100% Avalanche Tested
 This Device is Halide Free and RoHS Compliant with Exemption 7a,Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)

N−CHANNEL MOSFET

Pb−Free 2LI (on Second Level Interconnection)

Applications

 SMPS, Solar Inverters, UPS, Energy Storages,
EV Charging Infrastructure

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter

Symbol

Value

Unit
V

Drain−to−Source Voltage

VDSS

650

Gate−to−Source Voltage

VGS−8/+22

ID

70

A

PD

263

W

TC = 100CID

50

A

PD

131

W

Pulsed Drain Current (Note 1)

TC = 25C,
tP = 100 ms

IDM

216

A

Continuous Source−DrainCurrent (Body Diode)

TC = 25C,
VGS = −3 VIS38

Continuous Drain Current

TC = 25C

Power Dissipation
Continuous Drain Current
Power Dissipation

TC = 100C,
VGS = −3 V
Pulsed Source−Drain Current(Body Diode) (Note 1)
Single Pulse Avalanche
Energy (Note 2)

MARKING DIAGRAM

23TC = 25C,
VGS = −3 V,
tP = 100 ms

ISM

ILPK = 19.6
A, L = 1 mH

EAS

192

mJ

TJ, Tstg−55 to175

CTL

270

Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from Case for 10 s)

D2PAK−7L
CASE 418BJ

175

BG023N
065M3SAYWWZZ

BG023N065M3S = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
ZZ= Lot Traceability

ORDERING INFORMATIONDevice

PackageShipping†

NTBG023N065M3S

D2PAK−7L

800 / Tape& Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.
1. Repetitive rating, limited by max junction temperature.
2. EAS of 192 mJ is based on starting TJ = 25C, L = 1 mH, IAS = 19.6 A,
VDD = 100 V, VGS = 18 V.

 Semiconductor Components Industries, LLC, 2023

September, 2024 − Rev. 4

1Publication Order Number:
NTBG023N065M3S/D

NTBG023N065M3S
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal Resistance, Junction to Case (Note 3)

Parameter

RqJC

0.57

C/W

Thermal Resistance, Junction to Ambient (Note 3)

RqJA

40

3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particularconditions noted.

RECOMMENDED OPERATING CONDITIONSParameter
Operation Values of Gate to Source Voltage

Symbol

Value

Unit

VGSop

−5...−3+18

V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)Parameter

SymbolTest Conditions

MinTypMax

Unit

OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage

V(BR)DSSVGS = 0 V, ID = 1 mA, TJ = 25C650−−

V

Drain−to−Source Breakdown Voltage
Temperature Coefficient

DV(BR)DSS/DTJ

ID = 1 mA, Referenced to 25C−89−mV/C

VDS = 650 V, TJ = 25C−−10mA

VDS = 650 V, TJ = 175C (Note 5)−−500mA

VGS = −8/+ 22 V, VDS = 0 V−−

1.0mA

VGS = 18 V, ID = 20 A, TJ = 25C−

2333mW

VGS = 18 V, ID = 20 A, TJ = 175C (Note 5)−34−

VGS = 15 V, ID = 20 A, TJ = 25C−

28−

VGS = 15 V, ID = 20 A, TJ = 175C (Note 5)−

36−

VGS = VDS, ID = 10 mA, TJ = 25C

2.0

2.84.0V

VDS = 10 V, ID = 20 A (Note 5)

−

14−

S

VDS = 400 V, VGS = 0 V, f = 1 MHz(Note 5)−

1951−pF−

152−

−

13−

−

69−

−

19−

−

18−

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

IDSS
IGSS

ON CHARACTERISTICS
Drain−to−Source On Resistance

Gate Threshold Voltage
Forward Trans−conductanceRDS(ON)VGS(TH)gFS

CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VDD = 400 V, ID = 20 A, VGS = −3/18 V(Note 5)nC

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

Gate ResistanceRG

f = 1 MHz

−4.0−

W

Turn−On Delay Timetd(ON)−11−nsTurn−Off Delay Timetd(OFF)

VGS = −3/18 V, ID = 20 A, VDD = 400 V,
RG = 4.7 W, TJ = 25C (Note 4, 5)−35−

SWITCHING CHARACTERISTICS

Rise Timetr−15−

Fall Timetf−

9.6−

Turn−On Switching Loss

EON−

51−

Turn−Off Switching Loss

EOFF−

29−

Total Switching Loss

ETOT−

80−

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2mJ

NTBG023N065M3S
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) (continued)
Parameter

SymbolTest Conditions

Min

TypMax

Unit−

9.6−

ns−

41−

SWITCHING CHARACTERISTICS
Turn−On Delay Timetd(ON)

Turn−Off Delay Timetd(OFF)

VGS = −3/18 V, ID = 20 A, VDD = 400 V,
RG = 4.7 W, TJ = 175C (Note 4, 5)

Rise Time

tr−

14−

Fall Timetf−

12−Turn−On Switching Loss

EON−

51−

Turn−Off Switching Loss

EOFF−

45−

Total Switching LossETOT−96−

ISD = 20 A, VGS = −3 V, TJ = 25C−

4.5

6.0

ISD = 20 A, VGS = −3 V, TJ = 175C(Note 5)

−

4.2−

VGS = −3 V, IS = 20 A, dI/dt = 1000 A/ms,
VDS = 400 V, TJ = 25C (Note 5)

−

19−

−

11−

8−

mJ

SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSDVns

Reverse Recovery TimetRR

Charge timeta

Discharge timetb−Reverse Recovery Charge

QRR−

97−

nCReverse Recovery EnergyEREC−

8.7−

mJ

Peak Reverse Recovery Current

IRRM−

11−

A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. EON/EOFF result is with body diode.
5. Defined by design, not subject to production test.

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3

NTBG023N065M3S
TYPICAL CHARACTERISTICS
300

300

TJ = 25C
VGS = 10 V
VGS = 12 V
VGS = 15 VVGS = 18 V
VGS = 20 V

200150100200150
100505000024681012

VGS = 10 V
VGS = 12 V
VGS = 15 V
VGS = 18 V
VGS = 20 V

250
ID, Drain Current (A)ID, Drain Current (A)

250

1416

TJ = 175C024VDS, Drain to Source Voltage (V)ID, Drain Current (A)80

TJ = −55C
TJ = 25C
TJ = 175C

250

150
10050024681012141618403020
ID = 20 A
68

Drain to Source On Resistance(Normalized)

RDS(ON), Drain to Source
On Resistance (mW)

1.84030VGS = 12 V
VGS = 15 V
VGS = 18 V
1020304050

6012141618Figure 4. On−Resistance vs. Gate Voltage

TJ = 25C010VGS, Gate to Source Voltage (V)50101650

10Figure 3. Transfer Characteristics

201460

VGS, Gate to Source Voltage (V)60

12TJ = 25C
TJ = 175C70

200

010Figure 2. Output Characteristics

RDS(ON), Drain to Source
On Resistance (mW)

VDS = 10 V

8VDS, Drain to Source Voltage (V)Figure 1. Output Characteristics

3006701.6

ID = 20 A
VGS = 18 V

1.4
1.210.80.6−10080ID, Drain Current (A)−50050100150

TJ, Junction Temperature (C)

Figure 5. On−Resistance vs. Drain Current

Figure 6. On−Resistance vs. Junction Temperature

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4200

NTBG023N065M3S
TYPICAL CHARACTERISTICS
35

VGS = 0 V
TJ = 25C
f = 1 MHz

Eoss, Stored Energy (mJ)C, Capacitance (pF)

10000

1000

100

100.1

CISS
COSS
CRSS
110100302520151050650

0100

VDS, Drain to Source Voltage (V)Figure 7. Capacitance Characteristics

12ID, Drain Current (A)VGS, Gate to Source Voltage (V)ID = 20 A

15963400 V
520 V
650 V

0−302040−860−4600

700−6−4−200−20−40−60−80−100−120−14080−160−180−200VDS, Drain to Source Voltage (V)Figure 10. Reverse Conduction Characteristics−20

VGS = −5 V
VGS = −3 V
VGS = 0 V
VGS = 15 V
VGS = 18 V

1000

0−20−40ID, Drain Current (A)ID, Drain Current (A)−6500

TJ = 25Ctp < 20 ms

Figure 9. Gate Charge Characteristics−8400

VGS = −5 V
VGS = −3 V
VGS = 0 V
VGS = 15 V
VGS = 18 V

QG, Gate Charge (nC)

−10300Figure 8. Stored Energy vs. Drain to Source Voltage−1018200

VDS, Drain to Source Voltage (V)−60−80−100−120−140
TJ = 175Ctp < 20 ms

100

SINGLE PULSE
TJ = Max rated
RqJC = 0.57C/W
TC = 25C

10pulse duration = DCpulse duration = 1 ms
pulse duration = 100 ms
pulse duration = 10 ms
pulse duration = 1 msRdson
BV boundary
pulse boundary

1−160−1800.1
0.1−200

VDS, Drain to Source Voltage (V)110100VDS, Drain to Source Voltage (V)Figure 11. Reverse Conduction Characteristics

Figure 12. Safe Operating Area

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51000

NTBG023N065M3S
TYPICAL CHARACTERISTICS
30025C150C

PD, Power Dissipation (W)IAV, Avalanche Current (A)

100

10

10.0010.01

0.1

1Rthjc = 0.57C/W

250
200
150
100
50
025

105075tAV, Avalanche Time (ms)Figure 13. Avalanche Current vs. Pulse Time (UIS)90

Switching Loss (mJ)

80
70
60

100

Eon25CEoff25C
Etot25C

TC = 175CVGS = −3/18 V
VDD = 400 V
RG = 4.7 W9080504030207051015504030020510TC = 25C
VGS = −3/18 V
RG = 4.7 W
ID = 20 A

EonEoffEtot

100806040350

400

45050020Figure 16. Inductive Switching Loss vs. Drain Current

120

20300

15ID, Drain Current (A)Switching Loss (mJ)

Switching Loss (mJ)

140

Eon175C
Eoff175C
Etot175C

10Figure 15. Inductive Switching Loss vs. Drain Current

160

175

60

ID, Drain Current (A)

180

150

20100125

Figure 14. Maximum Power Dissipation vs.
Case Temperature

Switching Loss (mJ)

TC = 25C
VGS = −3/18 V
VDD = 400 V
RG = 4.7 W

100TC, Case Temperature (C)

5506001501401301201101009080706050403020100VDS, Drain−to−Source Voltage (V)TC = 25C
VGS = −3/18 V
VDD = 400 V
ID = 20 A

Eon25CEoff25C
Etot25C
12345678RG, Gate Resistance (W)Figure 17. Inductive Switching Loss vs. Drain Voltage

Figure 18. Inductive Switching Loss vs.
Gate Resistancewww.onsemi.com
6910

NTBG023N065M3S
TYPICAL CHARACTERISTICS
90TC = 25C
VGS = −3/18 V
VDD = 400 V
ID = 10 A

Switching Loss (mJ)

8070605040

Eon25CEoff25C
Etot25C3020
100147

10RG, Gate Resistance (W)

ZqJC, Transient Thermal Impedance (C/W)

Figure 19. Inductive Switching Loss vs. Gate Resistance1

D = 0 is Single Pulse

0.1

NOTES:ZqJC(t) = 0.57C/W
TJM = PDM x ZqJC(t) + TC
Duty Cycle,D = t1 / t2

PDM
t1
0.01
1e−04

t2

1e−03

1e−02

1e−01t, Rectangular Pulse Duration (s)Figure 20. Thermal Response Characteristics

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7

D = 0.00
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
1e+00

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONSD2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE BDATE 16 AUG 2019

GENERICMARKING DIAGRAM*XXXXXXXXX
AYWWG

XXXX = Specific Device CodeA= Assembly Location
Y= Year
WW = Work Week
G= Pb−Free Package*This information is generic. Please refer todevice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

DOCUMENT NUMBER:DESCRIPTION:

98AON84234G
D2PAK7 (TO−263−7L HV)Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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