DATA SHEET
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3-Level NPC Inverter
ModuleProduct Preview
NXH600N105L7F5SHG
The NXH600N105L7F5SHG is a power module in F5BP package
containing an I−type neutral point clamped three−level inverter. The
integrated field stop trench IGBTs and FRDs provide lower
conduction and switching losses, enabling designers to achieve highefficiency, high power density and superior reliability.

PIM58 112x62 (SOLDER PIN)
CASE 180HX

MARKING DIAGRAMFeatures• I−type Neutral Point Clamped Three−level Inverter Module• 1050 V Field Stop 7 IGBTs• Low Inductive Layout• Solder Pins
• Integrated NTC Thermistor• This is a Pb−Free and Halide Free Device

XXXXX = Device CodeG= Pb−Free Package
AT= Assembly & Test Site CodeYYWW = Year and Work Week Code

Typical Applications• Energy Storage System• Solar Inverters

PIN CONNECTIONSORDERING INFORMATION
See detailed ordering and shipping information on page 5 ofthis data sheet.

Figure 1. NXH600N105L7F5SHG Schematic Diagram
This document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.

© Semiconductor Components Industries, LLC, 2024

August, 2024 − Rev. P0

1

Publication Order Number:
NXH600N105L7F5SHG/DNXH600N105L7F5SHG
MODULE CHARACTERISTICS
SymbolValue

Unit

Operating Temperature under Switching Condition

Parameter

TVJOP−40 to 150°C

Storage Temperature Range

Tstg−40 to 125°C

Isolation Test Voltage, t = 2 sec, 50 Hz (Note 1)

Vis4800

VRMS

Stray Inductance

Ls CE

15nH

Terminal Connection Torque (M5, Screw)M

3 to 5NmWeight

G245g

Creepage Distance (terminal to heatsink)

17.46

mm

Creepage Distance (terminal to terminal)

6.48mmClearance Distance (terminal to heatsink)

15.62mm

Clearance Distance (terminal to terminal)

5.05

mm

Comparative Tracking Index

CTI>600

1. 4800 VACRMS for 2 second duration is equivalent to 4000 VACRMS for 1 minute duration.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

SymbolMax

Unit

Collector−Emitter Voltage

VCES

1050

VGate−Emitter Voltage
Positive Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10)

VGE

±2030

V

Continuous Collector Current @ Tc = 80°C (TJ = 175°C)

IC429

AIC(Pulse)

1287

A

Power Dissipation (TJ = 175°C, Tc = 80°C)

Ptot

1080

W

Minimum Operating Junction Temperature

TJMIN

−40°C

Maximum Operating Junction Temperature

TJMAX

175°CCollector−Emitter Voltage

VCES

1050

VGate−Emitter Voltage
Positive Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10)

VGE

±20
30

V

Continuous Collector Current @ Tc = 80°C (TJ = 175°C)

IC

429

A

IC(Pulse)

1287

A

Power Dissipation (TJ = 175°C, Tc = 80°C)

Ptot

1080

W

Minimum Operating Junction Temperature

TJMIN

−40°C

Maximum Operating Junction Temperature

TJMAX

175°C

VRRM

1050

VContinuous Forward Current @ Tc = 80°C

IF233

A

Repetitive Peak Forward Current (TJ = 175°C) Tpulse = 1 ms

IFRM

699

A

Maximum Power Dissipation @ Tc = 80°C (TJ = 175°C)

Ptot

621

W

Minimum Operating Junction Temperature

TJMIN

−40°C

Maximum Operating Junction Temperature

TJMAX

175°C

VRRM

1050

VIF170A

OUTER IGBT (T1, T4)

Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C) @ Tpulse = 1 ms

INNER IGBT (T2, T3)

Pulsed Peak Collector Current @ Tc = 80°C (TJ = 175°C) @ Tpulse = 1 ms

NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage

INVERSE DIODES (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
Continuous Forward Current @ Tc = 80°C

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NXH600N105L7F5SHG
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter

SymbolMax

Unit

Repetitive Peak Forward Current (TJ = 175°C) @ Tpulse = 1 ms

IFRM

510

A

Maximum Power Dissipation @ Tc = 80°C (TJ = 175°C)

Ptot

434

W

Minimum Operating Junction Temperature

TJMIN

−40°C

Maximum Operating Junction Temperature

TJMAX

175°C

INVERSE DIODES (D1, D2, D3, D4)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

SymbolMin

TypMaxUnit

VGE = 0 V, VCE = 1050 V

ICES−

−

500mA

VGE = 15 V, IC = 600 A, TJ = 25°C

VCE(SAT)

−

1.6

2.3

V−

2.0−

OUTER IGBT (T1, T4)
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage

VGE = 15 V, IC = 600 A, TJ = 150°C
Gate-Emitter Threshold Voltage

VGE = VCE, IC = 600 mA

VGE(TH)

4.0

5.5

6.9

V

Gate Leakage Current

VGE = 20 V, VCE = 0 V

IGES−−1mA

Rg

−

0.58−

W

−

800−

A

td(on)

−219−

nstr−

52−

td(off)−1141−

Fall Timetf−

38−

Turn-on Switching Loss per Pulse

Eon−

8390

−

Turn off Switching Loss per Pulse

Eoff−

9270−

td(on)

−

196−

tr−

58−

td(off)−1126−

Fall Time

tf−

43−

Turn-on Switching Loss per Pulse

Eon−

13750

−

Turn off Switching Loss per Pulse

Eoff−

11840

−

Cies

−

48597

−

Output CapacitanceCoes−

1836.2−

Reverse Transfer CapacitanceCres−

276.9−

VCE = 600 V, VGE = −15/+20 V, IC = 57 A

Qg

−

3048−

nC

Thermal grease,Thickness = 2.1 Mil ±2%,
λ = 2.9 W/mK

RthJH

−

0.139−°C/W

RthJC−0.088−°C/W

Diode Forward Voltage

IF = 400 A, TJ = 25°C

VF−

2.7

3.4

V−

2.4

−

Surge Forward Current

tp = 10 ms, Tvj = 150°C

IFSM−1800−

A

I2t

tp = 10 ms, Tvj = 150°C

I2t−

16200

−

A2s

Internal Gate Resistor
Turn−off safe operating area
Turn-on Delay Time
Rise Time
Turn-off Delay Time

Turn-on Delay Time
Rise Time
Turn-off Delay Time

Input Capacitance

Total Gate Charge
Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

VCC < 800 V,RG,off ≥ 30 W, Tvj < 150°CTJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,RG,off = 17 W

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W,
RG,off = 17 W

VCE = 20 V. VGE = 0 V. f = 100 kHz

mJ

nsmJ

pF

NEUTRAL POINT DIODE (D5, D6)

IF = 400 A, TJ = 150°C

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NXH600N105L7F5SHG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

SymbolMin

TypMaxUnit

Reverse Leakage Current

VF = 1050 V, TJ = 25°C

IR−−

200mA

Reverse Recovery Time

TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

trr−

95−

nsQrr

−

5.25−

mC

Peak Reverse Recovery Current

IRRM

−

121−

A

Peak Rate of Fall of Recovery Current

di/dt

−

3.08−

A/ms

Err

−

1724−

mJ

trr

−

178−

ns

Qrr

−

19.3−

mC

Peak Reverse Recovery Current

IRRM−

215−

A

Peak Rate of Fall of Recovery Current

di/dt−

2.87−

A/ms

Reverse Recovery Energy

Err−7229−mJRthJH−0.236

−°C/W

RthJC

−0.150−°C/W

VGE = 0 V, VCE = 1050 V

ICES−−500mA

VGE = 15 V, IC = 600 A, TJ = 25°C

VCE(sat)−1.62.3V−

2.0−Reverse Recovery Charge

Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge

Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 7 W

Thermal grease,Thickness = 2.1 Mil ±2%,
λ = 2.9 W/mK

INNER IGBT (T2, T3)
Collector-Emitter Cutoff Current
Collector-Emitter Saturation Voltage

VGE = 15 V, IC = 600 A, TJ = 150°C
Gate-Emitter Threshold Voltage

VGE = VCE, IC = 600 mA

VGE(TH)

4.0

5.5

6.9

VGate Leakage Current

VGE = 20 V, VCE = 0 V

IGES

−

−

1mA

Rg

−

0.58−

W−

800−

A

td(on)

−

175−

nstr

−

44−

td(off)−

1674−

Fall Time

tf−

43−

Turn-on Switching Loss per Pulse

Eon−

5890

−

Turn off Switching Loss per Pulse

Eoff−

11110−td(on)

−

163−

tr−

44−

td(off)−1818−Fall Time

tf−

23−

Turn-on Switching Loss per Pulse

Eon−

8720

−

Turn off Switching Loss per Pulse

Eoff−

13490−

Cies−

48597

−

Output Capacitance

Coes−

1836

−

Reverse Transfer Capacitance

Cres−

277

−

VCE = 600 V, IC = 57 A, VGE = −15/+20 V

Qg

−

3048

−nC

Thermal grease,
Thickness = 2.1 Mil ±2%,
λ = 2.9 W/mK

RthJH

−

0.139

−°C/W

RthJC

−0.088−°C/WInternal Gate Resistor
Turn−off safe operating area
Turn-on Delay Time
Rise Time
Turn-off Delay Time

Turn-on Delay Time
Rise Time
Turn-off Delay Time

Input Capacitance

Total Gate Charge
Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case

VCC < 800 V,RG,off ≥ 30 W, Tvj < 150°C
TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 5 W,
RG,off = 24 W

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 5 W,
RG,off = 24 W

VCE = 20 V. VGE = 0 V. f = 100 kHz

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4mJ

nsmJpFNXH600N105L7F5SHG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter

Test Condition

SymbolMin

TypMaxUnit

IF = 300 A, TJ = 25°C

VF−

2.7

3.4

V−

2.3−

INVERSE DIODES (D1, D2, D3, D4)
Diode Forward Voltage

IF = 300 A, TJ = 150°C
Surge Forward Current

tp = 10 ms, Tvj = 150°C

IFSM

−

1500−

A

tp = 10 ms, Tvj = 150°C

I2t−

11250

−

A2s

TJ = 25°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 5 W

trr

−85−

nsQrr−

5.65−nC

Peak Reverse Recovery CurrentIRRM−

148−

A

Peak Rate of Fall of Recovery Current

di/dt

−

3.69−

A/ms

Reverse Recovery Energy

Err−

2283−

mJtrr

−

183−

nsI2t
Reverse Recovery Time
Reverse Recovery Charge

TJ = 125°C
VCE = 600 V, IC = 200 A
VGE = -9 V to +15 V, RG,on = 5 W

Reverse Recovery Time
Reverse Recovery Charge

Qrr

−

18−

nC

Peak Reverse Recovery Current

IRRM−

224−

A

Peak Rate of Fall of Recovery Current

di/dt

−

3.80

−

A/ms

Reverse Recovery Energy

Err−

8250−

mJ

Thermal grease,Thickness = 2.1 Mil ±2%,
λ = 2.9 W/mK

RthJH

−0.277−°C/W

RthJC−0.220−°C/W

Nominal ResistanceT = 25°C

R25−

5−

kW

Nominal ResistanceT = 100°C

R100−

492.2−

W

Deviation of R25

R/R

−1−1%

Power Dissipation

PD−

5−

mW

−

1.3−

mW/K

−3430−

K

Thermal Resistance − Chip−to−heatsink
Thermal Resistance - Chip-to-case
THERMISTOR CHARACTERISTICS

Power Dissipation ConstantB(25/85), tolerance ±1%

B-value

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION
DeviceNXH600N105L7F5SHG

MarkingPackageShipping

NXH600N105L7F5SHG

F5 − PIM58 112x62 (Solder PIN)
(Pb−Free and Halide−Free, Solder Pins)

8 Units / Blister Tray

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T1, T2, T3, T4 (IGBT)

Figure 2. Typical Output Characteristics− IGBT

Figure 3. Typical Output Characteristics −IGBT

Figure 4. Transfer Characteristics −IGBT

Figure 5. Saturation Voltage Characteristic− IGBT

Figure 6. FBSOA

Figure 7. RBSOA (T1−T4)

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T1, T2, T3, T4 (IGBT)

Figure 8. Gate Voltage vs. Gate Charge

Figure 9. Capacitance vs. VCE

Figure 10. RBSOA (T2−T3)

Figure 11. Temperature vs. NTC
Value

Figure 12. Transient Thermal Impedance (IGBT Zthjc)

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – D1, D2, D3, D4 (INVERSE DIODE)

Figure 13. Inverse Diode Forward Characteristics

Figure 14. Transient Thermal Impedance (Inverse Diode Zthjc)

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – D5, D6 (NEUTRAL POINT DIODE)

Figure 15. Neutral Diode Forward Characteristics

Figure 16. Transient Thermal Impedance (Neutral Point Diode Zthjc)

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 17. Typical Turn On Loss vs. Ic

Figure 18. Typical Turn Off Loss vs. Ic

Figure 19. Typical Turn On Loss vs. RG

Figure 20. Typical Turn Off Loss vs. RG

Figure 21. Typical Turn−Off Switching
Time vs. Ic

Figure 22. Typical Turn−On Switching Timevs. Ic

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 23. Typical Turn−Off Switching
Time vs. RG

Figure 24. Typical Turn−On Switching Timevs. RG

Figure 25. Typical Reverse Recovery
Energy Loss vs. Ic

Figure 26. Typical Reverse Recovery
Energy Loss vs. RG

Figure 27. Typical Reverse Recovery
Time vs. Ic

Figure 28. Typical Reverse Recovery
Charge vs. Ic

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T1 || D5 OR T4 || D6

Figure 29. Typical Reverse Recovery
Current vs. Ic

Figure 30. Typical di/dt vs. Ic

Figure 31. Typical Reverse Recovery
Time vs. RG

Figure 32. Typical Reverse Recovery
Charge vs. RG

Figure 33. Typical Reverse Recovery
Peak Current vs. RG

Figure 34. Typical di/dt vs. RG

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 35. Typical Turn On Loss vs. Ic

Figure 36. Typical Turn Off Loss vs. Ic

Figure 37. Typical Turn On Loss vs. RG

Figure 38. Typical Turn Off Loss vs. RG

Figure 39. Typical Turn−Off Switching
Time vs. Ic

Figure 40. Typical Turn−On Switching Timevs. Ic

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 41. Typical Turn−Off Switching
Time vs. RG

Figure 42. Typical Turn−On Switching Timevs. RG

Figure 43. Typical Reverse Recovery
Energy Loss vs. Ic

Figure 44. Typical Reverse Recovery
Energy Loss vs. RG

Figure 45. Typical Reverse Recovery
Time vs. Ic

Figure 46. Typical Reverse Recovery
Charge vs. Ic

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NXH600N105L7F5SHG
TYPICAL CHARACTERISTICS – T2 || D3 + D4 OR T3 || D1 + D2

Figure 47. Typical Reverse Recovery
Current vs. Ic

Figure 48. Typical di/dt vs. Ic

Figure 49. Typical Reverse Recovery
Time vs. RG

Figure 50. Typical Reverse Recovery
Charge vs. RG

Figure 51. Typical Reverse Recovery
Peak Current vs. RG

Figure 52. Typical di/dt vs. RG

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NXH600N105L7F5SHG
PACKAGE DIMENSIONSPIM58 112.00x62.00x12.00
CASE 180HXISSUE O

www.onsemi.com16DATE 30 JUL 2024

NXH600N105L7F5SHG
PACKAGE DIMENSIONSPIM58 112.00x62.00x12.00
CASE 180HXISSUE OGENERICMARKING DIAGRAM*XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2DCODEBACKSIDE MARKINGXXXXX = Specific Device Code
AT= Assembly & Test Site CodeYYWW = Year and Work Week Code*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ G”, may or may not be present. Some products
may not follow the Generic Marking.

www.onsemi.com17DATE 30 JUL 2024

NXH600N105L7F5SHG

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to anyproducts or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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