Prof. Ohmi's Paper
January－December, 2005
E1118(W)

T.Ohmi, K.Kawamura, H.Ishikawa, T.Nozawa, T.Goto, A.Teramoto and T.Matsuoka,“LOW-K DIELECTRIC FILM FORMATION AND REACTIVE ION ETCHING
USING DAMAGE-FREE PLASMA PROCESS FOR NEXT GENERATION ULSIDEVICES,” THE 2nd INTERNATIONAL SYMPOSIUM ON SYSTEMCONSTRUCTION OF GLOBAL -NETWORK-ORIENTED INFORMATIONELECTRONICS (IGNOIE-COE04), Tohoku University, 21th Century COE Program,
pp.81-86, January 2005.

E1119(C)A. Teramoto and T.Ohmi, “High Current Drivability MOSFET Fabricated on Si(110)
surface,” 2005 MRS SPRING MEETING, March 2005.

E1120(C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “FAST ENCODING METHOD FOR
VECTOR QUANTIZATION BASED ON A NEW MIXED PYRAMID DATASTRUCTURE,” 2005 IEEE International Conference on Acoustics, Speech, and Siginal
Processing (ICASSP2005), CD-ROM, March 2005.

E1121(C)A. Teramoto, M. Komura, R. Kuroda, K. Watanabe, S. Sugawa, and T.Ohmi, “EOT
Measurement for Ultra-Thin gate Delectrics using LC Resonance Circuit,” THE 2005
INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES(ICMTS 2005), CD-ROM, April 2005.

E1122(C)

Ichirou Takahashi, Tatsufumi Isogai, Akinobu Teramoto, Shigetoshi Sugawa, andTadahiro Ohmi, “Low Voltage 3V Operation of the Ferroelectric Multi-Layer Stack MFIS
Structure Device Formed by Plasma Physical vapor Deposition and Oxygen RadicalTreatment,” The 17th International Symposium on Integrated Ferroelectrics (ISIF 2005),
CD-ROM, April 2005.

E1123 (F)Atsushi Hidaka, Satoru Yamashita, Naoki Tanahashi, Hidekazu Ishii, Masafumi Kitano,
Yasuyuki Shirai, Tadahiro Ohmi, “The Degradation Prevention of Resin Materials forSemiconductor Manufacturing Equipment by Applying the Ultra-High Purity Gas SupplyTechnology,” Solid State Phenomena Vols.103-104, pp.255-258, April 2005.

E1124 (C)Akihiro Morimoto, Masahiko Sugimura, Atsushi Kawata, Masafumi Kawasaki, Yasuhiro
Wakizaka, and Tadahiro Ohmi, “High-Speed Signaling Interconnects using Flat-surface
and Low-dielectric-loss Resin,” Proceedings of International Conference on Electronics
Packaging, pp.284-289, April 2005.

E1125 (F)Atsushi Hidaka, Satoru Yamashita, Hidekazu Ishii, Takeyoshi Kato, Naoki Tanahashi,
Masafumi Kitano, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai and Tadahiro Ohmi,“Adsorption Behavior of Various Fluorocarbon Gases on the Silicon Wafer Surface,”
Special Issue for SSDM 2004 of Japanese Journal of Applied Physics (JJAP) Part 1,
pp.2245-2251, May 2005.

E1126 (F)Tomoyasu Tate, Shigetoshi Sugawa, Koji Chiba, Koji Kotani and Tadahiro Ohmi, “AHigh S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal
Processing,” Special Issue for SSDM 2004 of Japanese Journal of Applied Physics (JJAP)Part 1, pp.2093-2098, May 2005.

E1127 (F)Hiroyuki Hashiguchi, Yoshiya Egashira, Hiroyuki Furukawa, Taishi Endo, TetsuyaKosaka, Koji Kosaka, Kiyohiko Uozumi, Masayuki Watanabe, Takahiro Yamakawa,
Noboru Miyata, Akira Nakada, Hiroshi Kubota and Tadahiro Ohmi, “Highly Reliable
Piezoelectric Actuator for Precision Stage System,” Japanese Journal of Applied Physics(JJAP) Part 1, pp.3307-3312, May 2005.

E1128 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Improved Fast Encoding Method forVector Quantization Based on Subvector Technique,” 2005 IEEE International
Symposium on Circuits and Systems (ISCAS2005), CD-ROM, May 2005.

E1129 (C)Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa and Tadahiro
Ohmi, “Impact of High Performance Accumulation-Mode Fully Depleted SOI
MOSFETs,” 2005 Asia-Pacific Workshop on fundamentals and Applications ofAdvanced Semiconductor Devices (AWAD2005), pp.59-62, June 2005.

E1130 (F)Zhibin PAN, Koji KOTANI, and Tadahiro OHMI, “Fast Encoding Method for Image
Vector Quantization Based on Multiple Appropriate Features to Estimate EuclideanDistance,” OPTICAL REVIEW Vol.12. No.3 (2005), pp.161-169, May /June 2005.

E1131 (W)

Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa and TadahiroOhmi, “Impact of High Performance Accumulation-Mode Fully Depleted SOI
MOSFETs,” IEICE Technical Report Electron Devices Vol.105 No.152 ED2005-67~84,
pp.59-62, June 2005.

E1132 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Fast Search Method for Image Vector
Quantization Based on Equal-Average Equal-Variance and Partial Sum Concept,” 2005
IEEE International Conference on Multimedia & Expo (ICME2005), CD-ROM, July
2005.

E1133 (F)Taishi ENDO, Yoshiya EGASHIRA, Hiroyuki FURUKAWA, Hiroyuki HASHIGUCHI,Kouji KOSAKA, Masayuki WATANABE, Noboru MIYATA, Shirou MORIYAMA,Shunichi SASAKI, Akira NAKADA, Tadahiro OHMI and Hiroshi KUBOTA, “Slip-Free
Driving Method for Nonresonant Piezoelectric Actuator,” Japanese Journal of Applied
Physics (JJAP) Part 1, Vol.44, No.7A, pp.5264-5268, July 2005.

E1134 (L)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A generalized multiple projection axes
method for fast encoding of vector quantization,” Pattern Recognition Letters Vol.26,Issue9, pp.1316-1326, July 2005.

E1135 (F)Naoto Miyamoto, Koji Kotani and Tadahiro Ohmi, “A 3.7x3.7mm2 310.9mW 105.2msec
512x512-pixel Phase Only Correlation Processor,” Journal of Robotics and Mechatronics,
Vol.17, No.4, pp.395-400, August 2005.

E1136 (L)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Recursive computation method for fastencoding of vector quantization based on 2-pixel-merging sum pyramid data structure,”
Pattern Recognition Letters, Volume 26, Issue 11, pp. 1684-1690, August 2005.

E1137 (C)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Fast Encoding Method for Vector
Quantization By Dramatically Constructing Subvectors,” 2005 IEEE International 48thMidwest Symposium on Circuits and Systems (MWSCAS 2005), pp.219-222, August2005.

E1138 (F)Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa and Tadahiro Ohmi,“Improvement of the electrical properties of PECVD silicon oxide using high-density andlow-ion-energy plasma post-treatment,” JOURNAL OF NON-CRYSTALLINE SOLIDS,
Vol.351, No.27-29 (2005), pp.2232-2237, (2005 Elsevier B.V.) August 2005.

E1139 (C)

Masato Toita, L. K. J. Vandamme, Shigetoshi Sugawa, Akinobu Teramoto and Tadahiro
Ohmi, “Geometry and Bias Dependency of Low-Frequency Random Telegraph Signal
and 1/F Noise Levels in MOSFETs,” 20th Annual Meeting of Japanese Association for
Science, Art and Technology of Fluctuations, pp.24-26, September 2005.

E1140 (C)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Fast Encoding Method for Image Vector
Quantization by Using Partial Sum Concept Walsh Domain,” 13th European Signal
Processing Conference, CD-ROM, September 2005.

E1141(C)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Enhanced Fast Encoding Method forVector Quantization by Finding an Optimally-Orderded Walsh Transform Kernel,” 2005
International Conference on Image Processing, CD-ROM, September 2005.

E1142 (C)

Ichirou Takahashi, Hiroyuki Sakurai, Tatsunori Isogai, Akinobu Teramoto, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Study of the Metal-Ferroelectric-Insulator-Si Structure
Device Formation by Controlling Properties of High Frequency and Microwave Excited
Plasma,” Extended Abstracts of the 2005 International Conference on SOLID STATE
DEVICES and MATERALS, pp.1034-1035, September 2005.

E1143 (C)Tetsuya Goto, Masato Terasaki, Hirokazu Asahara, Hiroshi Nakazawa, Atsutoshi
Inokuchi, Jiro Yamanaka, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa1 andTadahiro Ohmi, “Damage-Free Microwave-Excited Plasma Contact Hole Etching withoutCarrier Deactivation at the Interface between Silicide and Heavily-Doped Si,” Extended
Abstracts of the 2005 International Conference on SOLID STATE DEVICES andMATERALS, pp.536-537, September 2005.

E1144(C)Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa and Tadahiro
Ohmi, “Impact of The Improved High Performance Si(110) Oriented MOSFETs by UsingAccumulation-Mode Fully Depleted SOI Devices,” Extended Abstracts of the 2005
International Conference on SOLID STATE DEVICES and MATERALS, pp.258-259,
September 2005.

E1145 (L)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Performance Comparison between
Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS)
Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search(IEENNS) Method for Fast Encoding of Vector Quantization,” IEICE TRANSACTIONS
on Information and Systems Vol.E88-D No.9, pp.2218-2222, September 2005.

E1146 (L)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Fast Encoding Method for Vector
Quantization Using Modified L2-Norm Pyramid,” IEEE SIGNAL PROCESSINGLETTERS VOL.12, No.9, pp.609-612, September 2005.

E1147 (C)P. Gaubert, A. Teramoto, K. Kotani, and T. Ohmi, “Reduction of 1/f noise in Si(110) nad(110) surface MOSFET using a new clearning technology,” Proceedings of 20th Annual
Meeting of Japanese Association for Science, Art and Technology of Fluctuations,
Sepember 2005.

E1148 (P)P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, K. Nii, H. Akahori, K. Kotani, andT. Ohmi, “Impact of interface micro-roughness on low frequency noise in (110) and (100)pMOSFETs,” Proceedinfs of 18th International Conference on NOISE AND
FLUCTUATIONS-ICNF2005, pp.199-202, Sepember 2005.

E1149 (W)Tomoyasu Tate, Shigetoshi Sugawa, Koji Kotani, and Tadahiro Ohmi, “A High S/N Ratio
CMOS Image Sensor with Column Parallel A/D Converter for Object Extraction,”
PROCEEDINGS OF THE 3RD STUDENT-ORGANIZING INTERNATIONALMINI-CONFERENCE ON INFORMATION ELECTRONICS SYSTEM (SOIM-COE05),
PP.115-117, October 2005.

E1150 (W)

Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Shigetoshi Sugawa andTadahiro Ohmi, “A NEW NBTI LIFETIME PREDICTION METHOD FOR PMOSFETSWITH ULTRA THIN GATE FILMS,” PROCEEDINGS OF THE 3RD
STUDENT-ORGANIZINGINTERNATIONALMINI-CONFERENCE
ON
INFORMATION ELECTRONICS SYSTEM (SOIM-COE05), PP.127-130, October
2005.

E1151 (W)

M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K.
Kobayashi, T. Hattori, S. Sugawa, and T. Ohmi. “High Quality Si3N4 Gate Dielectric For
Sub-100nm ULSI Devices,” PROCEEDINGS OF THE 3RD STUDENT-ORGANIZINGINTERNATIONAL MINI-CONFERENCE ON INFORMATION ELECTRONICS
SYSTEM (SOIM-COE05), PP.143-146, October 2005.

E1152 (W)

Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa and Tadahiro
Ohmi, “High Performance CMOS Devices Using Accumulation-Mode Fully Depleted
SOI MOSFETs for Analog Integrated Circuits,” PROCEEDINGS OF THE 3RD
STUDENT-ORGANIZINGINTERNATIONALMINI-CONFERENCEONINFORMATION ELECTRONICS SYSTEM (SOIM-COE05), PP.151-154, October
2005.

E1153 (W)

H. Wakamastu, M. Higuchi, A. Teramoto, and T. Ohmi, “High-k Gate Dielectric Films
Formed by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition,”PROCEEDINGS OF THE 3RD STUDENT-ORGANIZING INTERNATIONALMINI-CONFERENCE ON INFORMATION ELECTRONICS SYSTEM (SOIM-COE05),
PP.159-162, October 2005.

E1154 (W)

Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Eye Detection Using
Separability Filter and Vector Quantization Histogram Method,” PROCEEDINGS OFTHE 3RD STUDENT-ORGANIZING INTERNATIONAL MINI-CONFERENCE ON
INFORMATION ELECTRONICS SYSTEM (SOIM-COE05), PP.241-244, October
2005.

E1155 (W)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Video-shot-change Detection
Using the Adjacent Pixel Intensity Difference Quantization Histogram Method,”
PROCEEDINGS OF THE 3RD STUDENT-ORGANIZING INTERNATIONALMINI-CONFERENCE ON INFORMATION ELECTRONICS SYSTEM (SOIM-COE05),
PP.249-252, October 2005.

E1156 (W)

Philippe GAUBERT, Akinobu TEARAMOTO, Tatsufumi HAMADA, Masashi
YAMAMOTO, and Tadahiro OHMI, “Suppression of the low frequency noise level in(100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process,”
Technical Report of IECE, SDM2005-173～179, SDM-179, pp.31-35, October 2005.

E1157 (F)Kazumasa Kawase, Hiroshi Umeda, Masao Inoue, Shimpei Tsujikawa, Yasuhiko
Akamatsu, Tomoyuki Suwa, Masaaki Higuchi, Masanori Komura, Akinobu Teramoto andTadahiro Ohmi, “Control of Nitrogen Depth Profile and Chemical Bonding State in
Silicon Oxynitride Films Formed by Radical Nitridation,” Japanese Journal of Applied
Physics (JJAP) Part 1 Vol.44 No.10, pp.7395-7399, October 2005.

E1158-1 (C)K. Watanabe, R.Kuroda, A. Teramoto, S. Sugawa, and T.Ohmi, “New NBTI Lifetime
Prediction Method for Ultra Thin SiO2 Films,” The 208th Electrochemical Society
Meeting, No.738, CD-ROM, October 2005.

E1158-2 (P)K. Watanabe, R.Kuroda, A. Teramoto, S. Sugawa, and T.Ohmi, “New NBTI Lifetime
Prediction Method for Ultra Thin SiO2 Films,” ECS Transactions Vol.1 No.1 Physics andChemistry of SiO2 and the Si-SiO2 Interface-5, pp.147-160, October 2005.

E1159-1 (C)M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K.
Kobayashi, T. Hattori, S. Sugawa, T. Ohmi, “High resolution X-ray photoelectron
spectroscopy study on Si3N4/Si interface structures and its correlation with hysteresis inC-V curves,” The 208th Electrochemical Society Meeting, No.748, CD-ROM, October
2005.

E1159-2 (P)M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K.
Kobayashi, T. Hattori, S. Sugawa, T. Ohmi, “High resolution X-ray photoelectron
spectroscopy study on Si3N4/Si interface structures and its correlation with hysteresis inC-V curves,” ECS Transactions Vol.1 No.1 Physics and Chemistry of SiO2 and the
Si-SiO2 Interface-5, pp.267-276, October 2005.

E1160 (C)M. Yamamoto, K. Nii, H. Morinaga, A. Teramoto, and T. Ohmi, “Suppression of Surface
Micro-Roughness of Silicon Wafer by Addition of Alcohol into Ultra Pure Water forRinsing Process,” The 208th Electrochemical Society Meeting, No.758, CD-ROM,
October 2005.

E1161(C)Koji Kotani, Naoto Miyamoto, Takeshi Ohkawa, Amir Jamak, Soichiro Kita, Tadahiro
Ohmi, “A Personal-Use Single-Chip Emulator Using Dynamically Reconfigurable Logic
Array,” IEEE Asian Solid-State Circuits Conference (A-SSCC) 2005, pp.329-332,
November 2005.

E1162 (C)T.Nishizuka, C.Tian, S.Y.Kang, T.Nozawa, T.Goto, and T.Ohmi, “Highly Selective W
Etching by using Advanced Microwave Plasma Source with RLSA,” 2005 Dry Process
International Symposium, pp.273-274, November 2005.

E1163 (F)

Kenta Arima, Jun Katoh, Shinya Horie, Katsuyoshi Endo, Tomoya Ono, Shigetoshi
Sugawa, Hiroshi Akahori, Akinobu Teramoto and Tadahiro Ohmi, “Hydrogentermination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanningtunneling microscopy,” Journal of Applied Physics, Vol.98, No.10, pp.103525-1-8,
November 2005.

E1164 (W)

Tadahiro Ohmi, Masaki Hirayama, and Akinobu Teramoto, “New Era of SiliconTechnologies Due to Radical Reaction Based Semiconductor Manufacturing,” The 17th
International Micro Electronics Conference Proceeding, pp.67-104, November 2005.

E1165 (L)MASATO TOITA, LODE K. J. VANDAMME, SHIGETOSHI SUGAWA, AKINOBUTERAMOTO, and TADAHIRO OHMI, “GEOMETRY AND BIAS DEPENDENCE OF
LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN
MOSFETS,” Fluctuation and Noise Letters, Vol. 5, No. 4 (2005), L539-L548, December
2005.

E1166 (C)Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa
Yamaha, Shigetoshi Sugawa and Tadahiro Ohmi, “Accurate Circuit PerformancePrediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly
Reliable ULSI Circuits,” IEEE International ELECTRON DEVICES meeting (IEDM)
2005, pp.29.5.1.- 29.5.4., IEDM05- 717-720, December 2005.

E1167-1 (C)T.Suwa, S.Sugawa, H.Takahashi, A.Teramoto and T.Ohmi, “Statistical evaluation of very
low gate leakage current for bit error evaluation in Flash Memory,” The 16th Symposiumof The Materials Research Society of Japan, pp.169, December 2005.

E1167-2 (P)T.Suwa, S.Sugawa, H.Takahashi, A.Teramoto and T.Ohmi, “Statistical evaluation of very
low gate leakage current for bit error evaluation in Flash Memory,” Transactions of theMaterials Research Society of Japan, Vol.31 No.1, pp.141-144, March 2006.

E1168 (C)Zhibin Pan, Koji Kotani and Tadahiro Ohmi, “Verification Results for the Choice ofProjection Axes Used in Fast Encoding Method of Vector Quantization,” 2005
International Symposium on Intelligent Signal Processing and Communication Systems(ISPACS2005), pp. 829-832, December 2005.

E1169 (B)

Tadahiro Ohmi, “Preface,” Sceintific Wet Process Technology for Innovative LSI/FPD
Manufacturing, Tayler & Francis, December 2005.

E1170 (B)

Tadahiro Ohmi, “Chapter 1-Surface Chemical Electronics at the Semiconductor Surface,”
Sceintific Wet Process Technology for Innovative LSI/FPD Manufacturing, pp.1-33,Taylor & Francis, December 2005.

E1171 (B)

Senri Ojima and Tadahiro Ohmi, “Chapter 7-Wet Vapor Resist Stripping Technology,”
Sceintific Wet Process Technology for Innovative LSI/FPD Manufacturing, pp.285-291,Taylor & Francis, December 2005.

E1172 (B)

Ikunori Yokoi, Masaaki Nagase, Koji Nishino, Nobukazu Ikeda, Masafumi Kitano, Hiroto
Izumi, and Tadahiro Ohmi, “Chapter 10-Adavenced Ultrapure Water and Liquid
Chemical Supply System and Materials for Fluctuation-Free Facility,” Sceintific Wet
Process Technology for Innovative LSI/FPD Manufacturing, pp.331-378, Taylor &Francis, December 2005.

E1173 (F)

Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa and Tadahiro Ohmi, “Effect ofpower density on the structure properties of microcrystalline silicon film prepared byhigh-density low-ion-energy microwave plasma,” Thin Solid films, Vol.493, No.1-2(2005), pp.54-59, (2005 Elsevier B.V.) December 2005.