Prof. Ohmi's Paper

January－December, 1994
E442 (F)Mizuho Morita and Tadahiro Ohmi, “Characterization and Control of Native
Oxide on Silicon,” Jpn. J. Appl. Phys., Vol. 33, No. 1B, pp. 370-374,
January 1994.

E443 (F)

Hiroshi Suzuki, Yuuji Maeda, Kenji Morita, Mizuho Morita and Tadahiro
Ohmi, “Selective Tungsten Chemical Vapor Deposition with HighDeposition Rate for ULSI Application,” Jpn. J. Appl. Phys., Vol. 33, No. 1B,
pp. 451-454, January 1994.

E444 (F)Toshiyuki Iwamoto, Hisayuki Shimada, Shigeki Shimomura, Masanobu
Onodera and Tadahiro Ohmi, “High-Reliability Lithography Performed by
Ultrasonic and Surfactant-Added Developing System,” Jpn. J. Appl. Phys.,Vol. 33, No. 1B, pp. 491-495, January 1994.

E445 (F)Kou Nakamura, Kazuyuki Ohmi, Kazuma Yamamoto, Koji Makihara andTadahiro Ohmi, “Silicon Wafer Orientation Dependence of Metal Oxide
Semiconductor Device Reliability,” Jpn. J. Appl. Phys., Vol. 33, No. 1B, pp.
500-504, January 1994.

E446 (F)Kazuhide Ino, Iwao Natori, Akihiro Ichikawa and Tadahiro Ohmi, “In Situ
Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by
Plasma-Parameter Extraction,” Jpn. J. Appl. Phys., Vol. 33, No. 1B, pp.
505-509, January 1994.

E447 (F)Kouichi Hirose, Hisayuki Shimada, Shigeki Shimomura, Masanobu Onodera
and Tadahiro Ohmi, “Ion-Implanted Photoresist and Damage-Free
Stripping,” Journal of Electrochemical Society, Vol. 141, No. 1, pp. 192-205,
January 1994.

E448 (F)Yoshio Ishihara, Tadahiro Ohmi, Hideharu Hasegawa, Takuya Ikeda,
Toshimichi Takasaki, Sumiyo Yamane and Ryousuke Fukushima,“Electrical Conductivity Measurement in Liquified Hydrogen Chloride,”
Journal of Electrochemical Society, Vol. 141, No. 1, pp. 246-250, January
1994.

E449 (F)H. Kikuyama, M. Waki, M. Miyashita, T. Yabune, N. Miki, J. Takano and T.
Ohmi, “A Study of the Dissociation State and the SiO2 Etching Reaction for
HF Solutions of Extremely Low Concentration,” Journal of Electrochemical
Society, Vol. 141, No. 2, pp. 366-374, February 1994.

E450 (F)Y. Maeda, H. Suzuki, T. Sakoh, K. Morita, M. Morita and T. Ohmi,“High-Selectivity and High-Deposition Rate Tungsten CVD Freed from
Chamber Cleaning,” Journal of Electrochemical Society, Vol. 141, No. 2, pp.
566-571, February 1994.

E451(C)Rita Au, Takeo Yamashita, Tadashi Shibata and Tadahiro Ohmi,“Neuron-MOS Multiple-Valued Memory Technology for Intelligent Data
Processing,” 1994 IEEE International Solid-State Circuits Conference,
Digest of Technical Papers, San Francisco, pp. 270-271, February 1994.

E452-1(C)Hisayuki Shimada, Toshiyuki Iwamoto, Shigeki Shimomura, Masanobu
Onodera and Tadahiro Ohmi, “High-Accuracy Resist Development Processwith Wide Margins by Quick Removal of Reaction Products,” Technical
Program, SPIE's 1994 Symposium on Microlithography, San Jose, pp. 223,
February-March 1994.

E452-2(C)Hisayuki Shimada, Toshiyuki Iwamoto, Shigeki Shimomura, Masanobu
Onodera and Tadahiro Ohmi, “High-Accuracy Resist Development Processwith Wide Margins by Quick Removal of Reaction Products,” Proceedings,
Advances in Resist Technology and Processing XI, Vol. 2195, pp. 813-822,
February-March 1994.

E453(C)

Tadahiro Ohmi, “Scientific Semiconductor Manufacturing Based on
Ultraclean
Processing
Concept,”
International
Conferenceon
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
3-22, March 1994.

E454(C)

Takashi Matsuura, Junichi Murota, Tadahiro Ohmi, Yasui Sawada and
Shoichi Ono, “Highly Selective and Atomic Layer Controlled Etching by
Ultraclean ECR Plasmas,” International Conference on AMDP(Advanced
Microelectronic Devices and Processing), Sendai, pp. 139-146, March 1994.

E455(C)

Mizuho Morita and Tadahiro Ohmi, “Thin Gate Oxide for Ultra Small
Device,” International Conference on AMDP(Advanced Microelectronic
Devices and Processing), Sendai, pp. 189-196, March 1994.

E456(C)

Hitoshi Morinaga, Makoto Suyama, Naomichi Yonekawa, Masashi Nose andTadahiro Ohmi, “Advanced Wet Chemical Cleaning,” International
Conference on AMDP(Advanced Microelectronic Devices and Processing),
Sendai, pp. 397-402, March 1994.

E457(C)T. Futatsuki, K. Ohmi, K. Nakamura and T. Ohmi, “Influence ofAtomic-Order Si-SiO2 Interface Microroughness on the Performance andReliability of Scaled MOSFET's,” International Conference on
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
425-430, March 1994.

E458(C)

S. Verhaverbeke, T. Futatsuki and T. Ohmi, “Study of the Surface
Topography of Si Wafers after H2 Annealing, after epi-Si Deposition andafter Wet Chemical Cleaning,” International Conference on
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
435-440, March 1994.

E459(C)

Wataru Shindo, Masaki Hirayama and Tadahiro Ohmi, “Low Temperature
Silicon Epitaxy Technology Using a Low-Energy Ion Bombardment
Process,” International Conference on AMDP(Advanced Microelectronic
Devices and Processing), Sendai, pp. 441-444, March 1994.

E460(C)T. Takewaki, H. Yamada, T. Ohmi, T. Shibata and T. Nitta, “High
Performance Giant-Grain Copper Metallization for High Reliability andHigh Speed ULSI Interconnects,” International Conference on
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
489-494, March 1994.

E461(C)K. Yamada, K. Tomita and T. Ohmi, “Silicon-Capping Silicidation
Technology for Ultra-Low Contact Resistance Metallization,” International
Conference on AMDP(Advanced Microelectronic Devices and Processing),
Sendai, pp. 501-506, March 1994.

E462(C)

K. Tomita, A. Nakada, M. M. Oka, T. Shibata, T. Ohmi and T. Nitta,“Formation of Ultra Shallow n+p Junctions Annealed at 450⁰C Using an
Ultra Clean Ion Implantation Technology,” International Conference on
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
507-512, March 1994.

E463(C)

N. Konishi, Y. Kawai, J. Watanabe and T. Ohmi, “Application of
Dual-Frequency-Excitation Plasma Processing Equipment to High-Integrity
ULSI Fabrication Processes,” International Conference on AMDP(Advanced
Microelectronic Devices and Processing), Sendai, pp. 513-516, March 1994.

E464(C)Y. Shirai, S. Miyoshi, S. Takahashi, T. Kojima and T. Ohmi, “Ultraclean
Gas
Distribution
Technology,”
International
Conferenceon
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
517-522, March 1994.

E465(C)

Hideki Aomi, Osamu Tanaka, Katsutoshi Yamamoto, Shinji Tamaru andTadahiro Ohmi, “0.01 um PTFE-Membrance ULPA Filters for Future Clean
Rooms,” International Conference on AMDP(Advanced Microelectronic
Devices and Processing), Sendai, pp. 541-542, March 1994.

E466(C)

Koji Kotani, Tadashi Shibata and Tadahiro Ohmi, “Neuron-MOS
Binary-Logic Integrated Circuits,” International Conference on
AMDP(Advanced Microelectronic Devices and Processing), Sendai, pp.
609-614, March 1994.

E467(C)

Rita Au, Takeo Yamashita, Tadashi Shibata and Tadahiro Ohmi,“Neuron-MOS Multiple-Valued Memory Technology for Intelligent Data
Processing,” International Conference on AMDP(Advanced Microelectronic
Devices and Processing), Sendai, pp. 615-620, March 1994.

E468(C)

Hiroshi Ishii, Tadashi Shibata, Hideo Kosaka and Tadahiro Ohmi, “AnExperimental Neuron-MOS Neural Network Chip Featuring On-Chip
Self-Learning Circuitry and Low-Power Synapse Cells,” International
Conference on AMDP(Advanced Microelectronic Devices and Processing),
Sendai, pp. 641-646, March 1994.

E469(C)

Tadashi Shibata and Tadahiro Ohmi, “Hardware Implementation ofIntelligence on Silicon Using Four-Terminal Devices,” International
Conference on AMDP(Advanced Microelectronic Devices and Processing),
Sendai, pp. 743-750, March 1994.

E470(C)S. Yasui, N. Yonekawa and T. Ohmi, “Organic Contaminants Removal from
Si Wafer Surface with Spin Cleaning Process Using Ozonized Ultrapure
Water,” 1994 Semiconductor Pure Water and Chemicals Conference, San
Jose, pp. 64-74, March 1994.

E471(C)M. Suyama, H. Morinaga, M. Nose, S. Verhaverbeke and T. Ohmi,“Deposition and Removal Mechanism of Noble Metals in Wet Chemical
Processing,” 1994 Semiconductor Pure Water and Chemicals Conference,
San Jose, pp. 93-109, March 1994.

E472(C)

T. Kezuka, M. Ishii, T. Unemoto, M. Itano, M. Kubo, M. Suyama and T.
Ohmi, “Particle Deposition Control for Various Wafer Surfaces in Acidic
Solution with Surfactant,” 1994 Semiconductor Pure Water and Chemicals
Conference, San Jose, pp. 211-225, March 1994.

E473(C)

T. Ohmi, K. Nakamura and K. Makihara, “Highly-Reliable Ultra-Thin Oxide
Formation
Using
Hydrogen-Radical-Balanced
Steam
Oxidation
Technology,” 1994 IEEE International Reliability Physics Proceedings, San
Jose, pp. 161-166, April 1994.

E474 (L)Y. Kawai, N. Konishi, J. Watanabe and T. Ohmi, “Ultra-Low-Temperature
Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted
Oxidation,” Applied Physics Letters, Vol. 64, No. 17, pp. 2223-2225, April
1994.

E475 (F)

Masaki Hirayama, Wataru Shindo and Tadahiro Ohmi, “Impact ofHigh-Precision RF-Plasma Control on Very-Low-Temperature Silicon
Epitaxy,” Jpn. J. Appl. Phys., Vol. 33, No. 4B, pp. 2272-2275, April 1994.

E476(C)

T. Kezuka, M. Ishii, T. Unemoto, M. Itano, M. Kubo and T. Ohmi, “Particle
Deposition Control for Various Wafer Surfaces in Acidic Solutions with
Surfactant,” 1994 Proceedings, 40th Annual Technical Meeting, Institute ofEnvironmental Sciences, Vol. 1, Chicago, Illinois, pp. 283-288, May 1994.

E477(C)

Hitoshi Morinaga, Makoto Suyama, Masashi Nose, Steven Verhaverbeke
and Tadahiro Ohmi, “Metallic Particle Growth on Si Wafer Surfaces in Wet
Chemical Processing and Its Prevention,” 1994 Proceedings, 40th Annual
Technical Meeting, Institute of Environmental Sciences, Vol. 1, Chicago,
Illinois, pp. 332-337, May 1994.

E478(C)N. Yonekawa, S. Yasui and T. Ohmi, “Contamination Removal from Si
Wafer Surface by Advanced Spin Cleaning Process,” 1994 Proceedings, 40th
Annual Technical Meeting, Institute of Environmental Sciences, Vol. 1,
Chicago, Illinois, pp. 367-372, May 1994.

E479(C)T. Yabune, T. Futatsuki, K. Yamada and T. Ohmi, “Isolation Performance ofa Wafer Transportation System Having a Continuous N2 Gas Purge
Function,” 1994 Proceedings, 40th Annual Technical Meeting, Institute ofEnvironmental Sciences, Vol. 1, Chicago, Illinois, pp. 419-424, May 1994.

E480-1(C)Y. Kawai, N. Konishi, J. Watanabe and T. Ohmi, “Ultra-Low-Temperature
Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted
Oxidation,” Extended Abstracts, 185th Electrochemical Society Meeting,
San Francisco, Abstract No. 250, pp. 404-405, May 1994.

E480-2 (P)Y. Kawai, N. Konishi, J. Watanabe and T. Ohmi, “Ultra-Low-Temperature
Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted
Oxidation,” Proceedings of the Tenth Symposium on Plasma Processing, G.
S. Mathad and D. W. Hess Eds., PV94-20, The Electrochemical Society,
Pennington NJ, pp. 568-579, 1994.

E481-1(C)R. N. Virtis, I. Natori, A. Ichikawa, K. Ino and T. Ohmi, “In-Situ Chamber
Cleaning: Optimizing Cleaning Gas and Chamber Material,” Extended
Abstracts, 185th Electrochemical Society Meeting, San Francisco, Abstract
No. 385, pp. 610-611, May 1994.

E481-2 (P)R. N.Virtis, A. Ichikawa, K. Ino and T. Ohmi, “In-Situ Chamber Cleaning:
Optimizing Cleaning Gas and Chamber Material,” Contamination Control
and Defect Reduction in Semiconductor Manufacturing III, Dennis
N.Schmidt ed., PV94-9, The Electrochemical Society, Pennington NJ, pp.
418-428, 1994.

E482-1(C)S. Verhaverbeke, T. Futatsuki and T. Ohmi, “The Effects of H2 Annealing on
the Si Surface and Its Use in the Study of Roughening during Wet Chemical
Cleaning,” Extended Abstracts, 185th Electrochemical Society Meeting, San
Francisco, Abstract No. 505, pp. 808-809, May 1994.

E482-2 (P)Steven Verhaverbeke, Takashi Futatsuki, R. Messoussi and Tadahiro Ohmi,“The Effects of H2 Annealing on the Si Surface and Its Use in the Study ofRoughening during Wet Chemical Cleaning,” H. R. Huff, W. Bergholz andK. Sumino eds., Semiconductor Silicon/1994, PV94-10, The Electrochemical
Society, Pennington NJ, pp. 1170-1181, 1994.

E483(C)K. Yamada, K. Tomita and T. Ohmi, “Ultra-Low Contact Resistance
Metallization by A Silicidation Technology Employing A Silicon Capping
Layer for Protection against Contamination,” Digest of Technical Papers,
1994 Symposium on VLSI Technology, Honolulu, pp. 63-64, June 1994.

E484(C)

K.
Ohmi,
K.
Nakamura,T.
Futatsuki
and
T.
Ohmi,
“Hydrogen-Radical-Balanced Steam Oxidation for Growing Ultra-Thin
High-Reliability Gate Oxide Films,” Digest of Technical Papers, 1994
Symposium on VLSI Technology, Honolulu, pp. 109-110, June 1994.

E485(C)

Tadahiro Ohmi, “Process and Device Innovations Based on Ultra Clean
Technology,” Extended Abstracts of 1994 International Symposium on
Semiconductor Manufacturing, Invited, Tokyo, pp. 75-80, June 1994.

E486(C)H. Izumi, Y. Nakagawa, S. Miyoshi and T. Ohmi, “Measurement of
Adsorbed Moisture Concentration on Various Kinds of Solid Surfaces byUsing Anhydrous Hydrogen Fluoride,” Extended Abstracts of 1994
International Symposium on Semiconductor Manufacturing, Tokyo, pp.
211-212, June 1994.

E487(C)

N. Konishi, T. Shibata and T. Ohmi, “Design Optimization of Gas Pumping
System for Ultra Clean Reduced-Gas-Pressure Processing Equipment,”
Extended Abstracts of 1994 International Symposium on Semiconductor
Manufacturing, Tokyo, pp. 213-214, June 1994.

E488(C)

Shinji Miyoshi, Yasuyuki Shirai, Masaki Narazaki and Tadahiro Ohmi,“Corrosion-Free Stainless Steel Tube Welding,” Extended Abstracts of 1994
International Symposium on Semiconductor Manufacturing, Tokyo, pp.
215-216, June 1994.

E489(C)

Yasuyuki Shirai, Shinji Miyoshi, Tsutomu Kojima and Tadahiro Ohmi,“Anti-Corrosive and Anti-Catalytic Cr2O3 Treated Gas Tubing System,”
Extended Abstracts of 1994 International Symposium on Semiconductor
Manufacturing, Tokyo, pp. 217-218, June 1994.

E490(C)N. Yonekawa, S. Yasui, S. Ojima and T. Ohmi, “Carbon Contamination Free
Wafer Cleaning,” Extended Abstracts of 1994 International Symposium on
Semiconductor Manufacturing, Tokyo, pp. 219-220, June 1994.

E491 (F)

H. Inaba, T. Ohmi, T. Yoshida and T. Okada, “Neutralization of Static
Electricity by Soft X-Rays and Vacuum UV Radiation,” Journal of
Electrostatics, Vol. 33, pp. 15-42, 1994.

E492 (L)Keiichi Yamada, Kazuo Tomita and Tadahiro Ohmi, “Formation of Metal
Silicide-Silicon Contact with Ultralow Contact Resistance by
Silicon-Capping Silicidation Technique,” Applied Physics Letters, Vol. 64,
No. 25, pp. 3449-3451, June 1994.

E493-1(C)Tadahiro Ohmi, “Trend for Future Silicon Technology,” Digest of Papers,
MicroProcess '94 (The 7th International MicroProcess Conference), pp.
48-49, Taiwan, July 1994.

E493-2(C)Tadahiro Ohmi, “Trend for Future Silicon Technology,” 1994 International
Electron Devices and Materials Symposium, pp. 0_3_9-0_3_12, Taiwan,
July 1994.

E494(C)

S. Verhaverbeke, R. Messoussi, H. Morinaga, N. Yonekawa, M. Suyama, S.
Yasui, M. Nose and T. Ohmi, “Si Wet Cleaning Technology: Some Aspectsof Metallic Impurities, Organic Impurities and Microroughness,”
Proceedings of the 2nd Workshop on Semiconductor Water Cleaning and
Surface Characterization, Korea, pp. 88-95, July 1994.

E495 (P)

Tadashi Shibata, Koji Kotani, Takeo Yamashita, Hiroshi Ishii, Hideo Kosaka
and Tadahiro Ohmi, “Implementing Intelligence on Silicon Using
Neuron-Like Functional MOS Transistors,” Advances in Neural Information
Processing Systems 6, Edited by Jack D. Cowan, Gerald Tesauro and Joshua
Alspector, pp. 919-926, (Morgan Kaufmann Publishers) 1994.

E496 (F)Tadahiro Ohmi and Tadashi Shibata, “The Concept of Four-Terminal
Devices and Its Significance in the Implementation of Intelligent Integrated
Circuits,” IEICE Trans. on Electronics, Vol. E77-C, No. 7, pp. 1032-1041,
July 1994.

E497 (F)Mizuho Morita and Tadahiro Ohmi, “Dopant-Free Channel Transistor with
Punchthrough Control Region Under Source and Drain,” Jpn. J. Appl. Phys.,Vol. 33, No. 8A, pp. L1066-L1069, August 1994.

E498(C)

Tadashi Shibata, Hideo Kosaka, Hiroshi Ishii and Tadahiro Ohmi, “A
Neuron-MOS Neural Network Using Low-Power Self-Learning-Compatible
Synapse Cells,” Extended Abstracts, 1994 International Conference on Solid
State Devices and Materials, Yokohama, pp. 346-348, August 1994.

E499(C)

Hiroshi Ishii, Tadashi Shibata and Tadahiro Ohmi, “Hardware-Oriented
Learning Algorithm Implemented on Silicon Using Neuron MOS
Technology,” Extended Abstracts, 1994 International Conference on Solid
State Devices and Materials, Yokohama, pp. 382-384, August 1994.

E500(C)

Shuhei Kondo, Tadashi Shibata and Tadahiro Ohmi, “Superior
Generalization Capabilities of Neuron-MOS Neural Networks in
Mirror-Symmetry Problem Learning,” Extended Abstracts, 1994
International Conference on Solid State Devices and Materials, Yokohama,
pp. 385-387, August 1994.

E501(C)Naomichi Yonekawa, Sinichi Yasui and Tadahiro Ohmi, “Cleaning
Technology and Analysis Technology for Hydrocarbon Contamination on Si
Wafer Surface,” Extended Abstracts, 1994 International Conference on Solid
State Devices and Materials, Yokohama, pp. 428-430, August 1994.

E502(C)

H. Suzuki, G. S. Jong, M. Hirayama and T. Ohmi, “Current Drive
Technology for High Speed Field Programmable Devices,” Extended
Abstracts, 1994 International Conference on Solid State Devices andMaterials, Yokohama, pp. 631-633, August 1994.

E503(C)

Jinzo Watanabe, Yasuaki Kawai, Nobuhiro Konishi and Tadahiro Ohmi,“Ultra-Low-Temperature Growth of High-Integrity Thin Gate Oxide Films
by Low-Energy Ion-Assisted Oxidation,” Extended Abstracts, 1994
International Conference on Solid State Devices and Materials, Yokohama,
pp. 649-651, August 1994.

E504(C)

Wataru Shindo, Masaki Hirayama and Tadahiro Ohmi, “Abrupt andArbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion
Bombardment Process,” Extended Abstracts, 1994 International Conference
on Solid State Devices and Materials, Yokohama, pp. 691-693, August 1994.

E505(C)

Masaki Hirayama and Tadahiro Ohmi, “Advanced Langmuir Probes for RF
Discharge Plasmas,” Extended Abstracts, 1994 International Conference on
Solid State Devices and Materials, Yokohama, pp. 697-699, August 1994.

E506(C)

M. M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi and T. Nitta,“Reducing the Reverse-Bias Current in 450⁰C-Annealed n+p Junction byHydrogen Radical Sintering,” Extended Abstracts, 1994 International
Conference on Solid State Devices and Materials, Yokohama, pp. 742-744,
August 1994.

E507(C)

O. Tatsumi, K. Ino, N. Konishi, Y. Kawai and T. Ohmi, “Ion-Assisted
Low-Temperature Surface Reflow of BPSG for Highly-Reliable Contact
Metallization,” Extended Abstracts, 1994 International Conference on Solid
State Devices and Materials, Yokohama, pp. 931-933, August 1994.

E508 (F)

Hisayuki Shimada, Shigeki Shimomura, Rita Au, Mamoru Miyawaki andTadahiro Ohmi, “Enhancement of Resolution and Linearity Control ofContact-Hole Resist Patterns with Surface-Active Developer,” IEEE Trans.
on Semiconductor Manufacturing, Vol. 7, No. 3, pp. 389-393, August 1994.

E509-1(C)S. Verhaverbeke, R. Messoussi and T. Ohmi, “Improved Rinsing Efficiency
after SPM(H2SO4/H2O2) by Adding HF,” Second International Symposium
on Ultra Clean Processing of Silicon Surfaces(UCPSS '94), Bruges, Belgium,(2pages), September 1994.

E509-2 (P)S. Verhaverbeke, R. Messoussi and T. Ohmi, “Improved Rinsing Efficiency
after SPM(H2SO4/H2O2) by Adding HF,” Edited by M.Heyns, M.Meuris and
P.Mertens, Proceedings of UCPSS '94, pp. 201-204, 1994.

E510-1(C)H. Morinaga, M. Suyama, M. Nose, S. Verhaverbeke and T. Ohmi, “Metallic
Particle Growth and Metal Induced Pitting (MIP) on Silicon Surfaces in Wet
Processing and Its Prevention,” Second International Symposium on Ultra
Clean Processing of Silicon Surfaces(UCPSS '94), Bruges, Belgium,(2pages), September 1994.

E510-2 (P)H. Morinaga, M. Suyama, M. Nose, S. Verhaverbeke and T. Ohmi, “Metallic
Particle Growth and Metal Induced Pitting (MIP) on Silicon Surfaces in Wet
Processing and Its Prevention,” Edited by M.Heyns, M.Meuris and
P.Mertens, Proceedings of UCPSS '94, pp. 217-220, 1994.

E511-1(C)S. Verhaverbeke, R. Messoussi and T. Ohmi, “Roughening During Wet
Processing Studied by AFM of Stepped Surfaces,” Second International
Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS '94),
Bruges, Belgium, (2pages), September 1994.

E511-2 (P)S. Verhaverbeke, R. Messoussi and T. Ohmi, “Roughening During Wet
Processing Studied by AFM of Stepped Surfaces,” Edited by M.Heyns,
M.Meuris and P.Mertens, Proceedings of UCPSS '94, pp. 289-292, 1994.

E512(C)

Tadahiro Ohmi, “Very High Quality Thin Oxide Film Formation Based on
Ultraclean Wafer Surface,” Second International Symposium on Ultra Clean
Processing of Silicon Surfaces (UCPSS '94), Bruges, Belgium, (2pages),
September 1994.

E513-1(C)N. Yonekawa, S. Yasui and T. Ohmi, “Perfect Cleaning Technology andAnalysis for Organic Contaminations on Si Wafer Surface,” Second
International Symposium on Ultra Clean Processing of Silicon
Surfaces(UCPSS '94), Bruges, Belgium, (2pages), September 1994.

E513-2 (P)Naomichi Yonekawa, Sinichi Yasui and Tadahiro Ohmi, “Perfect Cleaning
Technology and Analysis for Organic Contaminations on Si Wafer Surface,”
Edited by M.Heyns, M.Meuris and P.Mertens, Proceedings of UCPSS '94, pp.
327-330, 1994.

E514(C)

Shinji Miyoshi, Koji Kawada, Hiroshi Suzuki and Tadahiro Ohmi, “TheReaction Mechanism of WF6 Selective CVD,” Microcontamination '94, San
Jose, California, pp. 262-271, October 1994.

E515(C)

Yasuyuki Shirai, Tsutomu Kojima, Shinji Miyoshi, Masaki Narazaki andTadahiro Ohmi, “Specialty Gas Distribution System Free form Corrosion,
Gas Decomposition and Reaction-Perfect Cr2O3 Treated Tubing System-,”
Microcontamination '94, San Jose, California, pp. 272-281, October 1994.

E516(C)

Osamu Uchizawa, Yohichi Kanno, Kouichi Murakami, Fumiyuki Seino,
Takashi Onodera and Tadahiro Ohmi, “Control of Valve Operating Time for
Accurate Process Control,” Microcontamination '94, San Jose, California, pp.
290-297, October 1994.

E517(C)

Atsushi Ohki, Yasumitsu Mizuguchi and Tadahiro Ohmi, “Quick Inspection
Technology of External Leakage for Total Gas Delivery System by APIMS,”
Microcontamination '94, San Jose, California, pp. 298-307, October 1994.

E518(C)

M. Maeno, H. Izumi, Y. Nakagawa, S. Miyoshi, Y. Shirai and T. Ohmi,“Corrosion Resistant and Catalytic Properties of Fluorine PassivatedSurface,” Extended Abstracts, 186th Electrochemical Society Meeting,Florida, Abstract No. 179, pp. 278, October 1994.

E519-1(C)H. Izumi, Y. Nakagawa, S. Miyoshi and T. Ohmi, “Studies of Moisture
Adsorption on Various Kinds of Solid Surfaces Using Anhydrous Hydrogen
Fluoride,” Extended Abstracts, 186th Electrochemical Society Meeting,Florida, Abstract No. 204, pp. 318-319, October 1994.

E519-2 (P)H. Izumi, Y. Nakagawa, S. Miyoshi and T. Ohmi, “Studies of Moisture
Adsorption on Various Kinds of Solid Surfaces Using Anhydrous Hydrogen
Fluoride,” Oxide Films on Metals and Alloys, Edited by K. R. Hebert and G.
E. Thompson, PV94-25, The Electrochemical Society, pp. 246-255, 1995.

E520(C)

Masaki Hirayama, Wataru Shindo and Tadahiro Ohmi, “Formation of
Abrupt Carrier Profile in Epitaxial Silicon Film by Low-Energy
Bombardment Process,” Extended Abstracts, 186th Electrochemical Society
Meeting, Florida, Abstract No. 417, pp. 642-643, October 1994.

E521(C)

A. Nakada, M. M. Oka, K. Tomita, T. Shibata, T. Ohmi and T. Nitta,“Lifetime Enhancement in Low-Temperature-Annealed Ion-Implanted
Junctions by Hydrogen Radical Sintering,” Extended Abstracts, 186th
Electrochemical Society Meeting, Florida, Abstract No. 422, pp. 651,
October 1994.

E522(C)

Tadahiro Ohmi, “Very High Quality Thin Gate Oxide Film Formation
Technology,” Final Program, American Vacuum Society 41st National
Symposium, Denver, pp. 176-177, October 1994.

E523 (F)M. Maeno, R. Hirayama, H. Izumi, R. Takahashi, K. Chiba, Raymond N.
Vrtis and T. Ohmi, “Fluorine-Passivated Electroless Ni-P Films,” Journal of
Electrochemical Society, Vol. 141, No. 10, pp. 2649-2654, October 1994.

E524 (F)

Hitoshi Morinaga, Makoto Suyama and Tadahiro Ohmi, “Mechanism ofMetallic Particle Growth and Metal-Induced Pitting on Si Wafer Surface in
Wet Chemical Processing,” Journal of Electrochemical Society, Vol. 141,
No. 10, pp. 2834-2841, October 1994.

E525 (F)Tadahiro Ohmi, Seiji Sudoh and Hiroyuki Mishima, “Static Charge Removalwith IPA Solution,” IEEE Trans. on Semiconductor Manufacturing, Vol. 7,
No. 4, pp. 440-446, November 1994.

E526(C)

Tadahiro Ohmi, “Advanced TFT Processing Based on Ultraclean Processing
Concept,” Digest of Technical Papers, AM-LCD 94 (1994 International
Workshop on Active-Matrix Liquid-Crystal Displays), Invited, pp. 1-7,
November-December 1994.

E527 (F)Tadahiro Ohmi, “Trend for Future Silicon Technology,” Jpn. J. Appl. Phys.,Vol. 33, Part 1, No. 12B(Special Issue), pp. 6747-6755, December 1994.

E528 (F)Koji Suzue, Takashi Matsuura, Junichi Murota, Yasuji Sawada and Tadahiro
Ohmi,”Substrate Orientation Dependence of Self-Limited Atomic-Layer
Etching of Si with Chlorine Adsorption and Low-Energy Ar+ Irradiation,”
Applied Surface Science, 82/83, pp. 422-427, (Elsevier Science Publishers B.
V., 1994.)