Prof. Ohmi's Paper
January－December, 2001
E947 (F)Kensuke Takahashi, Hiroshi Nohira, Tomohiro Nakamura, Tadahiro Ohmi andTakeo Hattori, “Influence of Interface Structure on Oxidation Rate of Silicon,” ”
Jpn. J. Appl. Phys., Vol. 40, No. 1, pp. L68 L70, January 2001.

E948(C)

Toshiyuki Nozawa, Makoto Imai, Masanori Fujibayashi, Tadahiro Ohmi, “AParallel Vector Quantization Processor Feauturing an Efficient Search
Algorithm for Real-time Motion Picture Compression,” Asia and South Pacific
Design Automation Conference 2001(ASP-DAC2001), University LSI DesignContest, A1-13, pp. 25-26, January-February 2001.

E949(C)

Satoshi Sakaidani, Naoto Miyamoto, Tadahiro Ohmi, “Flexible Processor Basedon Full-Adder / D-Flip-Flop Merged Module,” Asia and South Pacific DesignAutomation Conference 2001(ASP-DAC2001), pp.35-36, January-February
2001.

E950 (F)Kei Kanemoto, Fuminobu Imaizumi, Tatsufumi Hamada, Yukio Tamai, Akira
Nakada, and Tadahiro Ohmi, “Dependence of ion inplantation : Induced defects
on substrate doping,” J. Appl. Phys., Vol.89, No.6, pp.3156-3161, March 2001.

E951(C)Tadahiro Ohmi, Shigetoshi Sugawa and Masaki Hirayama, “High Integrity
Direct Oxidation / Nitridation at Low Temperatures using Radicals,” The 199th
Meeting of The Electrochemical Society, Abstract No.270, Vol.2001-I,
Washington, DC, March 2001.

E952 (F)Tadahiro Ohmi, Shigetoshi Sugawa, Koji Kotani, Masaki Hirayama and Akihiro
Morimoto, “New Paradigm of Silicon Technology,” Proceedings of The IEEE,
Vol.89, No.3, pp.394-412,Invited Paper, March 2001.

E953 (F)Satoshi Sakaidani, Naoto Miyamoto and Tadahiro Ohmi, “Flexible Processor
Based on Full-Adder/D-Flip-Flop Merged Module (FDMM)”, Jpn. J. Appl.
Phys., Vol. 40, Part 1, No.4B, pp.2581-2584, April 2001.

E954 (F)

Masafumi Kitano, Yasuyuki Shirai, Atsushi Ohki, Shinichi Babasaki andTadahiro Ohmi, “Impurity Measurement in Specialty Gases Using an
Atmospheric Pressure Ionization Mass Spectrometer with a Two-Compartment
Ion Source,” Jpn. J. Appl. Phys., Vol. 40, Part 1, No.4B, pp.2688-2693, April
2001.

E955 (F)Kei Kanemoto, Herzl Aharoni and Tadahiro Ohmi, “Ultrashallow andLow-Leakage p+n Junction Formation by Plasma Immersion Ion Implantation(PIII) and Low-Temperature Post-Implantation Annealing,” Jpn. J. Appl. Phys.,Vol. 40, Part 1, No.4B, pp.2706-2711, April 2001.

E956 (F)Akihiro Morimoto, Koji Kotani, Shigetoshi Sugawa and Tadahiro Ohmi,“Interconnect and Substrate Structure for Gigascale Integration,” Jpn. J. Appl.
Phys., Vol. 40, Part 1, No.4B, pp.3038-3043, April 2001.

E957(C)Yuji Saito, Hiroshi Takahashi, Kazuo Ohtsubo, Masaki Hirayama, Shigetoshi
Sugawa, Herzl Aharoni and Tadahiro Ohmi, “Improvement of MOSFET
Subthreshold Leakage Current by its Irradiation with Hydrogen Radicals
Generated in Microwave-Excited High-Density Inert Gas Plasma,” 2001 IEEE
international reliability physics symposium proceedings, pp.319-326, Orlando,
Florida, May 2001.

E958 (F)Geun-Min Choi and Tadahiro Ohmi, “Removal efficiency of Metallic Impurities
on Various Substrates in HF-Based Solutions”, Journal of The Electrochemical
Society, Vol.148, No.5, pp.G241-248, May 2001.

E959(C)

Zhibin Pan, Koji Kotani, and Tadahiro Ohmi,”A FAST SEARCH METHODOF VQ-BASED SPEAKER IDENTIFICATION FOR LARGE POPULATIONUSING DISCRIMINATIVE FACTOR AND HIERARCHICAL MATCHING”,
The 2001 IEEE International Conference on Acoustics, Speech, and Signal
Processing, Vol.Ⅵof Ⅵ, May 2001.

E960(C)

Hirokazu Suzuki, Yasuyuki Shirai and Tadahiro Ohmi, “Energy Saving in theFabs,” ISESH, 8th Annual Conference Kenting 2001, pp.1D‐1-1D‐4, June2001.

E961(C)

Hiroyuki Shimada, Ichiro Ohshima, Shin-Ichi Nakao, Munekatsu Nakagawa,
Kei Kanemoto, Masaki Hirayama, Shigetoshi Sugawa, and TadahiroOhmi,“Low Resistivity bcc-Ta/TaNx Metal Gate MNSFETs Having Plane Gate
Structure Featuring Fully Low-Temperature Processing below 450℃,” 2001
SYMPOSIUM ON VLSI TECHNOLOGY,DIGEST OF TECHNICALPAPERS, pp.67-68, June 2001.

E962(F)

Keng Hoong Wee,Tadashi Shibata and Tadahiro Ohmi, “A Simple Random
Noise
Generator
Employing
Metal-Oxide-Semiconductor-Field-Effect-Transistor Channel kT/C Noise andLow-Capacitance Loading Buffer,” Jpn. J. Appl. Phys., Vol. 40, Part 1, No.7,
pp.4501-4507, July 2001.

E963(P)

Tadahiro Ohmi and Shigetoshi Sugawa, “Advances in CFM Related to300mm Pocessing-Low Temperature Radical Induced Surface Oxidation,
Nitridation and Oxinitridation Based on Low Electron Temperature HighDensity Plasma,” SEMICON West 2001 SEMI Technical Symposium(STS)：
Innovations in Semiconductor Manufacturing, pp.349-396, San Francisco,
July 2001.

E964(F)

Masaaki Nagaｓe, Masafumi Kitano, Yasuyuki Shirai, and Tadahiro Ohmi,“Precise Control of Gas Concentration in Pｒocess Chamber,” Jpn. J. Appl. Phys.,Vol. 40, Part 1, No.8, pp.5168-5172, August 2001.

E965 (F)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi, “HighlyReliable Ultrathin Silicon Oxide Film Formation at Low Temperature byOxygen Radical Generated in High-Density Krypton Plasma,” IEEE Trans. onElectron Devices, Vol.48, No.8, pp.1550-1555, August 2001.

E966(F)

Hiroyuki Shimada, Ichiro Ohshima, Takeo Ushiki, Sigetoshi Sugawa, andTadahiro Ohmi, “Tantalum Nitride Metal Gate FD-SOI CMOS FETs Using
Low Resistivity Self-Grown bcc-Tantalum Layer,” IEEE Trans. ｏｎ ElectronDevices, Vol.48, No.8, pp.1619-1626, August 2001.

E967(L)

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Herzl Aharoni, andTadahiro Ohmi, “Thin Inter-Polyoxide Films for Flash Memories Grown at Low
Temperature(400 ℃ )by Oxygen Radicals,” IEEE Electron Device Letters,
Vol.22, No.9, pp.423-425, September 2001.

E968(C)

Hiroshi Sugawara, Yoshinori Tajima, and Tadahiro Ohmi, “A Study on
Reclaimed Photoresist Developer Using an Electrodialysis Method,” Extended
Abstracts of the 2001 International Conference on SOLID STATE DEVICES
and MATERALS, pp.18-19, September 2001.

E969(C)

Takeshi Ohkawa, Yoshihide Wakayama, Sadao Kobayashi, Shigetoshi Sugawa,Herzl Aharoni,and Tadahiro Ohmi, “The Effect of Organic Contaminations
Molecular Weights in the Cleanroom Air on MOS Devices Degradation-aControlled Laminar Air Flow Experiment,” Extended Abstracts of the 2001
International Conference on SOLID STATE DEVICES and MATERALS,
pp.24-25, September 2001.

E970(C)

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, HerzlAharoni, and Tadahiro Ohmi, “Improved J-E Characteristics and Stress Induced
Leakage Currents (SILC) in oxynitride Films Grown at 400 ℃ by
Microwave-Excited High-Density Kr/O2/NH3 Plasma,” Extended Abstracts ofthe 2001 International Conference on SOLID STATE DEVICES andMATERALS, pp.162-163, September 2001.

E971(C)

Naoki Ueda, Yuji Saito, Masaki Hirayama, Yoshimitsu Yamauchi, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Highly Reliable MOS Trench Gate FET byOxygen Radical Oxidation,” Extended Abstracts of the 2001 InternationalConference on SOLID STATE DEVICES and MATERALS, pp.164-165,
September 2001.

E972(C)

Ichiro Ohshima, Hiroyuki Shimada, Shin-Ichi Nakao, Weitao Cheng, YasuhiroOno, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, and Tadahiro Ohmi,“Improved Transconductance and Gate Insulator Integrity OF MISFETs with
Si3N4 Gate Dielectric Fablicated by Microwave-Excited High-Density Plasma
at 400℃,” Extended Abstracts of the 2001 International Conference on SOLID
STATE DEVICES and MATERALS, pp.168-169, September 2001.

E973(C)

Fuminobu Imaizumi, Tatsufumi Hamada, Shigetoshi Sugawa, Herzl Aharoni,
and Tadahiro Ohmi, “A Comparative Examination of Polyoxide Films
Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted(400℃) Oxidation Techniques,” Extended Abstracts of the 2001 InternationalConference on SOLID STATE DEVICES and MATERALS, pp.170-171,
September 2001.

E974(C)

Yukio Tamai and Tadahiro Ohmi, “Source/Drain Dopant Deactivation andJunction Degradation by Energetic Ions in Plasma Processes,” Extended
Abstracts of the 2001 International Conference on SOLID STATE DEVICES
and MATERALS , pp.192-193, September 2001.

E975(C)

Shin-Ichi Nakao, Munekatsu Nakagawa, Ichiro Ohshima, Hiroyuki Shimada,and Tadahiro Ohmi, “PVD Tantalum Oxide with Buffer Silicon Nitride Stacked
High-k MIS Structure Using Low Temperature and High Density PlasmaProcessing,” Extended Abstracts of the 2001 International Conference on
SOLID STATE DEVICES and MATERALS, pp.502-503, September 2001.

E976(C)Naoki Ueda, Yoshimitsu Yamauchi, and Tadahiro Ohmi, “A New Two-Step
Round Oxidation STI Technology for Highly Reliable Flash Memory,”
Extended Abstracts of the 2001 International Conference on SOLID STATE
DEVICES and MATERALS, pp.538-539, September 2001.

E977(C)

Masafumi Kitano, Masaaki Nagase, Yasuyuki Shirai and Tadahiro Ohmi,“Al2O3 Passivation Film on Austenitic Stainless Steel Free From Plasma
Damage,” JOINT INTERNATIONAL MEETING <The 200th Meeting of The
Electrochemical Society /The 52nd Meeting of the International Society ofElectrochemistry>, Abstract No.641, September 2001.

E978(C)

Masaaki Nagase, Masafumi Kitano, Yoshihide Wakayama, Yasuyuki Shirai andTadahiro Ohmi, “Influence of Molecular Weight of Organic Contaminants upon
Adsorption Behaviors onto Silicon Surfaces,” JOINT INTERNATIONALMEETING <The 200th Meeting of The Electrochemical Society /The 52nd
Meeting of the International Society of Electrochemistry>, Abstract No.1405,
September 2001.

E979(C)

Geun-Min Choi, Katsunobu Kitami, Ikunori Yokoi, and Tadahiro Ohmi,“ Different Adsorption Behaviors of Platinum Group Metals on Silicon
Surfaces,” JOINT INTERNATIONAL MEETING <The 200th Meeting of The
Electrochemical Society /The 52nd Meeting of the International Society ofElectrochemistry>, Abstract No.1416, September 2001.

E980(C)

Ikunori Yokoi, Geun-Min Choi, and Tadahiro Ohmi, “Effect of pH Values in
Ozonized Ultrapure Water on Cleaning Efficiency,” JOINT INTERNATIONALMEETING <The 200th Meeting of The Electrochemical Society /The 52nd
Meeting of the International Society of Electrochemistry>, Abstract No.1440,
September 2001.

E981 (P)Masaaki Nagase, Masafumi Kitano, Yoshihide Wakayama, Yasuyuki Shirai andTadahiro Ohmi, “Influence of Molecular Weight of Organic Contaminants upon
Adsorption Behaviors onto Silicon Surfaces,” Electrochemical Society
Proceedings (Cleaning Technology in Semiconductor Device ManufacturingVII), Vol. 2001-26, pp.47-53, September 2001.

E982 (P)

Ikunori Yokoi, Geun-Min Choi, and Tadahiro Ohmi, “Effect of pH Values in
Ozonized Ultrapure Water on Cleaning Efficiency,”Electrochemical Society
Proceedings (Cleaning Technology in Semiconductor Device ManufacturingVII), Vol. 2001-26, pp.69-76, September 2001.

E983 (P)Ikunori Yokoi, Katsunobu Kitami, Geun-Min Choi, and Tadahiro Ohmi,“Different Adsorption Behaviors of Platinum Group Metals on Silicon
Surfaces,” Electrochemical Society Proceedings (Cleaning Technology in
Semiconductor Device Manufacturing VII), Vol. 2001-26, pp.102-109,
September 2001.

E984(P)

Masafumi Kitano, Masaaki Nagase, Yasuyuki Shirai and Tadahiro Ohmi,“Al2O3 Passivation Film on Austentic Stainless Steel Free From Plasma
Damage,” Electrochemical Society Proceedings (Corrosion and Corrosion
Protection), Vol. 2001-22, pp.115-121, September 2001.

E985(C)Yukihiro Kanechika, Takashi Kawaguchi, Masaaki Nagase, Toshihiko Jimbo,
Masahiro Yamasaki, Masaki Hirayama, Yasuyuki Shirai, and Tadahiro Ohmi,“Development of The Next Generation Si Wafer Transfer/Stock System,”2001 IEEE International Symposium on Semiconductor Manufacturing, October
2001.

E986(C)

Hiroshi Sugawara, Yoshinori Tajima, and Tadahiro Ohmi, “Photoresist
Developer Reclamation Technology and System”, 2001 IEEE International
Symposium on Semiconductor Manufacturing, pp.481-484, October 2001.

E987(C)

Chuan Jie Zhong, Hiroaki Tanaka, Masaki Hirayama, Shigetoshi Sugawa, andTadahiro Ohmi, “Deposition of high quality silicon oxide films by
Kr/O2/SiH4high-density and low ions energy plasma at lowtemperature(400℃),” 12th Microelectronics conference proceeding, pp.41-47,November 2001.

E988(C)

Tatsufumi Hamada, Yuji Saito, Masaki Hirayama, Sigetoshi Sugawa, Herzl
Aharoni, and Tadahiro Ohmi, “(100)and(111)Si MOS Transistors FabricatedWith Low
Growth Temperature (400 ℃ ) Gate Oxide by Kr/O2
Microwave-Excited High-Density Plasma,” IEEE Transactions onSemiconductor Manufacturing, Vol. 14, No. 4, pp. 418 420, November 2001.

E989(C)

Shigetoshi Sugawa, Ichiro Ohshima, Hideaki Ishino, Yuji Saito, Masaki
Hirayama, and Tadahiro Ohmi, “Advantage of Silicon Nitride Gate Insulator
Transistor by using Microwave-Excited High-Density Plasma for applying
100nm Technology Node,” 2001 IEEE International Electron Devices meeting,pp.37.3.1-37.3.4, December 2001.

E990(F)

Takeshi Ohkawa, Osamu Nakamura, Shigetoshi Sugawa, Herzl Aharoni, andTadahiro Ohmi, “Improving the Reliability and the Insulation Properties of Gate
Oxide in the Gate Injection Mode by Using a New Procedure of (100)Si Surfaceand Si/SiO2 Interface Treatments,” IEEE Transactions on Electron Devices, Vol.
48, No. 12, pp. 2957 2959, December 2001.

E991(C)

Herzl Aharoni, Yuji Saito, Kazuo Ohtsubo, Masaki Hirayama, Shigetoshi
Sugawa, and Tadahiro Ohmi,“Comparative examination of thin gate oxide
films,” The 47th Meeting of the Israel Physical Society (IPS 2001), Vol. 47, pp.
33, December 2001.