Prof. Ohmi's Paper
January－December, 1999
E807 (C)Koji Kotani and Tadahiro Ohmi, “Feedback Charge-transfer Comparator with
Zero Static Power,” 1999 IEEE International Soliｄ-State Circuits Conference,
Digest of Technical Papers, pp. 328-329, San Francisco, February 1999.

E808(C)

Tadahiro Ohmi, Makoto Imai, Masahiro Konda, Toshiyuki Nozawa, Tatuo
Morimoto, Takahiro Nakayama, Masanori Fujibayashi, and Koji Kotani,“Intelligence Implementation to Silicon Chip,” International Symposium on
Future of Intellectual Integrated Electronics, pp. 3-20, Sendai, March 1999.

E809 (C)Kazuyuki Maruo, Tadashi Shibata, and Tadahiro Ohmi, “Automatic DefectDetection System for LSI Wafers using Image Processing Techniques,”
International Symposium on Future of Intellectual Integrated Electronics, pp.
217-222, Sendai, March 1999.

E810(C)T. Shibata, M. Yagi, M. Adachi, A. Okada, A. Nakada, M. Konda, Y.
Yamashita, T. Nakai, T. Morimoto, and T. Ohmi, “Right-Brain-Computing
Integrated Circuits for Intelligent Information Processing,” International
Symposium on Future of Intellectual Integrated Electronics, pp. 413-429,
Sendai, March 1999.

E811 (C)

Makoto Imai, Toshiyuki Nozawa, Masanori Fujibayashi, Koji Kotani, andTadahiro Ohmi, “Computational Architecture with Decreasing Calculation
Steps Using Most-Significant-Digit-First Calculation Scheme,” International
Symposium on Future of Intellectual Integrated Electronics, pp. 469-472,
Sendai, March 1999.

E812 (C)Toshiyuki Nozawa, Makoto Imai, Masanori Fujibayashi, Koji Kotani, andTadahiro Ohmi, “A Parallel Vector Quantization Processor Having the Featureof Low Hardware Complexity,” International Symposium on Future ofIntellectual Integrated Electronics, pp. 473-475, Sendai, March 1999.

E813 (C)Takahisa Nitta and Tadahiro Ohmi, “Advanced Wet Clean-up System for
ULSI,” Abstracts, MRS 1999 Spring Meeting, Materials Research Society, p.
263, San Francisco, invited, March 1999.

E814-1 (C)Tadahiro Ohmi, Masaki Hirayama, and Ryu Kaihara, “Low Temperature
Formation of SiO2 and High-K Dielectrics for ULSI in 21st Century,”
Abstracts, MRS 1999 Spring Meeting, Materials Research Society, p. 268, San
Francisco, invited, March 1999.

E814-2 (P)Tadahiro Ohmi, Katsuyuki Sekine, Ryu Kaihara, Yuji Saito, Yasuyuki Shirai,
and Masaki Hirayama, “Low-Temperature Formation of SiO2 and High
Dielectrics Constant Material for ULSI in 21st Century,” Mat. Res. Soc. Symp.
Proc., Vol. 567, pp. 3-12, Warrendale, PA, October 1999.

E815 (C)Tadahiro Ohmi, “Key Materials for Very High Performance Next Generation
VLSI,” Abstracts, MRS 1999 Spring Meeting, Materials Research Society,p.367, San Francisco, invited, March 1999.

E816 (C)T. Kezuka, F. Kamiya, M. Itano, and T. Ohmi, “The Behavior of Surfactant
Adsorption and Minimization of Particle contamination in HF Solution,” 1999
Semiconductor Pure Water and Chemicals Conference, pp. 337-354, Santa
Clara, March 1999.

E817 (F)

Tetsuya Yamamoto, Nguyen Thang Chien, Makoto Ando, Naohisa Goto,
Masaki Hirayama, and Tadahiro Ohmi, “Design of Radial Line Slot Antennas
at 8.3 GHz for Large Area Uniform Plasma Generation,” Jpn. J. Appl. Phys.,Vol. 38, Part 1, No. 4A, pp. 2082-2088, April 1999.

E818 (F)

Hideyuki Murata, Yasushi Tomita, Makoto Miyashita, Kazunari Sakai,
Masayuki Toda, and Tadahiro Ohmi, “Mass Transfer of Water Vapor in a
Hollow Fiber for Degassing Processes,” AIChE Journal, Vol. 45, No. 4, pp.
681-690, April 1999.

E819 (F)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi,“Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation
Employing High-Density and Low-Energy Ion Bombardment,” Jpn. J. Appl.
Phys., Vol. 38, Part 1, No. 4B, pp. 2329-2332, April 1999.

E820 (F)Shin-ichi Nakao, Masaki Numata, and Tadahiro Ohmi, “Thin and
Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain CopperInterconnects for Advanced ULSI Metallization,” Jpn. J. Appl. Phys., Vol. 38,
Part 1, No.4B, pp. 2401-2405, April 1999.

E821 (C)Tadahiro Ohmi, Katsuyuki Sekine, Tskeshi Ohkawa, Ryu Kaihara, Yasuyuki
Shirai, and Masaki Hirayama,“PASSIVITY ISSUE IN DEVICEFABRICATION,” Electrochemical Society Proceedings, Vol. 99-42, pp.
764-777, May 1999.

E822 (F)M. Yoshida, A. Seki, Y. Shirai, and T. Ohmi, “Passivation of stainless steel by
δ-Al2O3 filmes resistant to ozonized water,” J. Vac. Sci. Technol. A, Vol. 17,
No. 3, pp. 1059-1065, May/June 1999.

E823 (C)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi,“High-integrity Ultra-thin Silicon Nitride Film Grown at Low Temperature forExtending Scaling Limit of Gate Dielectric,” 1999 Symposium on VLSITechnology Digest of Technical Papers, pp. 115-116, Kyoto, June 1999.

E824(C)

Hiroyuki Komeda, Masaki Hirayama, Yusuke Hirayama, Kazuhide Ino, Ryu
Kaihara, and Tadahiro Ohmi, “Balanced Electron Drift Oxide Etcher with Xe
Added Gas Chemistry for Low Cost and High Performance Contact
Metallization,” 1999 Symposium on VLSI Technology Digest of TechnicalPapers, pp. 127-128, Kyoto, June 1999.

E825 (F)

Masanori Mayusumi, Masato Imai, Junzo Takahashi, Kazuhiko Kawada, andTadahiro Ohmi, “Study of Surface Treatment of Silicon Wafer Using Small
Angle Incident X-Ray Photoelectron Spectroscopy,” Journal of The
Electrochemical Society, Vol. 146, No. 6, pp. 2235-2238, June 1999.

E826 (F)Akira Nakada, Tadashi Shibata, Masahiro Konda, Tatsuo Morimoto, andTadahiro Ohmi, “A Fully Parallel Vector-Quantization Processor forReal-Time Motion-Picture Compression,” IEEE Journal of Solid-State Circuits,Vol. 34, No. 6, pp. 822-830, June 1999.

E827 (F)

Takeo Ushiki, Mo-Chium Yu, Kunihiro Kawai, Toshikuni Shinohara, KazuhideIno, Mizuho Morita, and Tadahiro Ohmi, “Gate Oxide Reliability Concerns in
Gate-Metal Sputtering Deposition Process: An Effect of Low-Energy Large
Mass Ion Bombardment,” Microelectronics Reliability, Vol. 39, No. 3, pp.
327-332, (1999 Elsevier Science Ltd)E828 (C)Tadahiro Ohmi, “New developments of ultraclean technologies - Reliable
manufacturing technologies must be established and productivity improved in
the semiconductor industry to provide low-cost production of ULSI,” Global
Electronics Purchasing 99, pp. 61-63, 1999.

E829 (F)Kazuyuki MARUO, Tadashi SHIBATA, Takahiro YAMAGUCHI, Masayoshi
ICHIKAWA, and Tadahiro OHMI, “Automatic Defect Pattern Detection on
LSI Wafers Using Image Processing Techniques,” IEICE Trans. Electron., Vol.
E82-C, No. 6, pp. 1003-1012, June 1999.

E830 (C)Takahiro Yamaguchi, Mani Soma, Masahiro Ishida, and Tadahiro Ohmi, “A
Novel Test Method for Testing Delay Faults in PLL Circuits,” 5th IEEE
International Mixed Signal Testing Workshop, pp. 263-266, Whistler, Canada,
June 1999.

E831 (C)Tadahiro Ohmi, Masaki Hirayama, and Yasuyuki Shirai,“Critical
Requirements for Very High Quality Processes in 300mm Production,”
Semicon West 99: Symposium on Contamination-Free Manufacturing (CFM)for Semiconductor Processing, A1-A40, San Francisco, keynote, July 1999.

E832 (C)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi, “Lowtemperature formation of gate-grade silicon nitride film employing
microwave-excitation high-density plasma,” Technical Report of IEICE, 1999
International Workshop on Advanced LSI’s and Devices, pp. 77-82, Seoul, July
1999.

E833 (C)Hajime Kumami, Wataru Shindo, Satoshi Hondo, and Tadahiro Ohmi,“Plasma-Induced Dopant (As, P, Sb, B) Deactivation by Low-Energy Ion
Bombardment (<30ev) during Silicon Epitaxial Growth,” Technical Report of
IEICE, 1999 International Workshop on Advanced LSI’s and Devices, pp.88-95,
Seoul, July 1999.

E834 (P)

Tadahiro OHMI, Osamu NAKAMURA, Takeshi OHKAWA, and Yukinori
MORITA, “Great Importance of Atomic Order Flatness of Substrate Surface
for Very Advanced ULSI,” Precision Science and Technology for PerfectSurfaces, Proceedings of the 9th International Conference on Production
Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE
Publication Series No. 3, pp. xxiii-xxix, Osaka, invited, August-September
1999.

E835 (P)Osamu NAKAMURA, Takeshi OHKAWA, Munekatsu NAKAGAWA, andTadahiro OHMI, “Formation Process of Highly Reliable Gate Oxide Using
Water Vapor Generator System,” Precision Science and Technology for
Perfect Surfaces, Proceedings of the 9th International Conference on Production
Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE
Publication Series No. 3, pp. 426-431, Osaka, August-September 1999.

E836 (P)Koji KAWADA, Yukio MINAMI, Akihiro MORIMOTO, Nobukazu IKEDA,
Osamu NAKAMURA, Yasuyuki SHIRAI, and Tadahiro OHMI, “Water
Vapor Generator Using Catalytic Reactor,” Precision Science and Technology
for Perfect Surfaces, Proceedings of the 9th International Conference on
Production Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T.
Kataoka, JSPE Publication Series No. 3, pp. 432-437, Osaka,
August-September 1999.

E837 (P)

Masafumi KITANO, Osamu NAKAMURA, Masaaki NAGASE, Yasuyuki
SHIRAI, and Tadahiro OHMI, “Cr2O3 Passivated Gas Tubing System andInstallation Method,” Precision Science and Technology for Perfect Surfaces,
Proceedings of the 9th International Conference on Production Engineering (9thICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication
Series No. 3, pp. 438-443, Osaka, August-September 1999.

E838 (P)Masaaki NAGASE, Osamu NAKAMURA, Masafumi KITANO, Yasuyuki
SHIRAI, and Tadahiro OHMI, “Precise Control of Gas Concentration Ratio in
Process Chamber,” Precision Science and Technology for Perfect Surfaces,
Proceedings of the 9th International Conference on Production Engineering (9thICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication
Series No. 3, pp. 444-449, Osaka, August-September 1999.

E839 (P)Masayuki TODA, Kiyokazu SHISHIDO, Kazuya AKUTO, and Tadahiro
OHMI, “Dissolution of Metal into Gas Controlled Ultra Pure Water,”
Precision Science and Technology for Perfect Surfaces, Proceedings of the 9thInternational Conference on Production Engineering (9th ICPE), Edited by Y.
Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, pp.
469-474, Osaka, August-September 1999.

E840 (P)Jun-ichi IDA, Hiroshi MORITA, and Tadarhio OHMI, “Particle Removal
Effect of Hydrogenated Ultrapure Water with Megasonic Irradiation,”
Precision Science and Technology for Perfect Surfaces, Proceedings of the 9thInternational Conference on Production Engineering (9th ICPE), Edited by Y.
Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, pp.
475-479, Osaka, August-September 1999.

E841 (P)Masayuki MIYASHITA, Tadahiro OHMI, Tatsuhiro YABUNE, and Hirohisa
KIKUYAMA, “Precise Wet Etching for Large-Sized Wafer,” Precision
Science and Technology for Perfect Surfaces, Proceedings of the 9thInternational Conference on Production Engineering (9th ICPE), Edited by Y.
Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, pp.
501-506, Osaka, August-September 1999.

E842 (P)T. KEZUKA, M. ITANO, and T. OHMI, “The Control of Etching Rate for
Various SiO2 Films,” Precision Science and Technology for Perfect Surfaces,
Proceedings of the 9th International Conference on Production Engineering (9thICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication
Series No. 3, pp. 507-512, Osaka, August-September 1999.

E843 (P)Senri OJIMA, Takayuki JIZAIMARU, Shunkichi OMAE, and Tadahiro OHMI,“Room Temperature Photoresist Physical Stripping Technology,” Precision
Science and Technology for Perfect Surfaces, Proceedings of the 9thInternational Conference on Production Engineering (9th ICPE), Edited by Y.
Furukawa, Y. Mori, and T. Kataoka, JSPE Publication Series No. 3, pp.
513-518, Osaka, August-September 1999.

E844 (P)

Takeo USHIKI, Koji KOTANI, Toshihiko FUNAKI, Kunihiro KAWAI, andTadahiro OHMI, “Characterization of Electrically Active Defects at SOI-BOX
Interface on High-Dose SIMOX Wafers,” Precision Science and Technology
for Perfect Surfaces, Proceedings of the 9th International Conference on
Production Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T.
Kataoka, JSPE Publication Series No. 3, pp. 567-572, Osaka,
August-September 1999.

E845 (P)

Katsuyuki SEKINE, Yuji SAITO, Masaki HIRAYAMA, and Tadahiro OHMI,“Low-Temperature Growth of Ultra-Thin Silicon Nitride Films for Extending
Scaling Limit of Silicon Oxide,” Precision Science and Technology for PerfectSurfaces, Proceedings of the 9th International Conference on Production
Engineering (9th ICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE
Publication Series No. 3, pp. 579-583, Osaka, August-September 1999.

E846 (P)Akio MORII, Masaki HIRAYAMA, and Tadahiro OHMI, “Advanced Shower
Plate Applicable To Radial Line Slot Antenna Microwave Excited Plasma
Chamber,”
Precision Science and Technology for Perfect Surfaces,
Proceedings of the 9th International Conference on Production Engineering (9thICPE), Edited by Y. Furukawa, Y. Mori, and T. Kataoka, JSPE Publication
Series No. 3, pp. 584-589, Osaka, August-September 1999.

E847 (C)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi,“High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen
Generated in High-Density Krypton Plasma,” Extended Abstracts of the 1999
International Conference on SOLID STATE DEVICES and MATERALS, pp.
152-153, Tokyo, September 1999.

E848 (C)

Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, and Tadahiro Ohmi, “Effectof in-situ Formed Interlayer at Ta-SiO2 interface on Performance andReliability in Ta-Gate MOS Devices,” Extended Abstracts of the 1999
International Conference on SOLID STATE DEVICES and MATERALS, pp.
178-179, Tokyo, September 1999.

E849 (C)

Makoto Yoshimi, Shigeto Maegawa, Toshiaki Tsuchiya, Mizuho Morita,
Kiyoshi Demizu, and Tadahiro Ohmi, “Evaluation of SOI Wafer Quality andTechnological Issues to be Solved,” Extended Abstracts of the 1999
International Conference on SOLID STATE DEVICES and MATERALS, pp.
352-353, Tokyo, invited, September 1999.

E850 (C)Fuminobu Imaizumi, Tatsufumi Hamada, Kei Kanemoto, and Tadahiro Ohmi,“Dopant-Induced Defects Formed by Ion Implantation-Dopant Species
Dependence-,” Extended Abstracts of the 1999 International Conference on
SOLID STATE DEVICES and MATERALS, pp. 518-519, Tokyo, September
1999.

E851 (C)Zhibin Pan, Koji Kotani, Tadahiro Ohmi, “Extracting person’s speech
individually from original records of meeting by speaker identification
technique,” Technical Report of IEICE, Vol. 99, No. 298, (The Institute ofElectronics, Information and Communication Engineers), DSP99-80, SP99-78,
pp. 9-13, September 1999.

E852 (F)Makoto Imai, Toshiyuki Nozawa, Masanori Fujibayashi, Koji Kotani, andTadahiro Ohmi, “Fast Computational Architectures to Decrease Redundant
Calculations - Eliminating Redundant Digit Calculation and Excluding Useless
Data,” IEICE Trans. Electron., Vol. E82-C, No. 9, pp. 1707-1714, September
1999.

E853 (F)Masahiro Konda, Tadashi Shibata, and Tadahiro Ohmi, “A Compact
Memory-Merged Vector-Matching Circuitry for Neuron-MOS Associative
Processor,” IEICE Trans. Electron., Vol. E82-C, No. 9, pp. 1715-1721,
September 1999.

E854 (F)Akira Nakada, Masahiro Konda, Tatsuo Morimoto, Takemi Yonezawa, Tadashi
Shibata, and Tadahiro Ohmi, “Fully-Parallel VLSI Implementation of Vector
Quantization Processor Using Neuron-MOS Technology,” IEICE Trans.
Electron., Vol. E82-C, No. 9, pp. 1730-1738, September 1999.

E855 (C)Takahiro Yamaguchi, Masahiro Ishida, Mani Soma, and Tadahiro Ohmi,“Optimal Tests for VCO’s based on Process Variations,” 2nd IEEE International
Workshop on Production Test Automaton, Atlantic, NJ, September-October
1999.

E856(F)

Kiyoshi Ando, Isao Akutsu, Tadahiro Ohmi, “Gradational lead screw vacuum
pump development”, Journal of Vacuum Science and Technology A, Volume
17, Issue 5, pp.3144-3148, September/October 1999.

E857 (C)

Takeo Ushiki, Koji Kotani, Toshihiko Funaki, Kunihiro Kawai, and Tadahiro
Ohmi, “Evidence of Energetically-Localized Trap-States at SOI-BOX Interface
in High-Dose SIMOX Wafers,” 1999 IEEE International SOI Conference, pp.
48-49, Sonoma, CA, October 1999.

E858 (F)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi, “Silicon
nitride film growth for advanced gate dielectric at low temperature employing
high-density and low-energy ion bombardment,” J. Vac. Sci. Technol. A, Vol.
17, No. 5, pp. 3129-3133, September/October 1999.

E859 (F)

Wataru Shindo, Shigefumi Sakai, Hiroaki Tanaka, Chuan Jie Zhong, andTadahiro Ohmi, “Low-temperature large-grain poly-Si direct deposition by
microwave plasma enhanced chemical vapor deposition using SiH4/Xe,” J. Vac.
Sci. Technol. A, Vol. 17, No. 5, pp. 3134-3138, September/October 1999.

E860 (C)Osamu Suenaga, Sadao Kobayashi, and Tadahiro Ohmi, “A Proposal for
Energy Saving in Semiconductor Fabs,” The Eighth International Symposium
on Semiconductor Manufacturing, Proceeding of ISSM99, pp. 255-258, Santa
Clara, October 1999.

E861 (C)Yoshio Yamazaki, Ikunori Yokoi, Toshikazu Abe, Toshihiro Ii, Masaki
Hirayama, and Tadahiro Ohmi, “A Newly Developed Cooling System Using
Hydrogenated Water,” The Eighth International Symposium on Semiconductor
Manufacturing, Proceeding of ISSM99, pp. 417-420, Santa Clara, October
1999.

E862 (C)

Hiroshi Morita, Jun-ichi Ida, Toshihiro Ii, and Tadahiro Ohmi, “Advanced UCT
Cleaning Process Based on Specific Gases Dissolved Ultrapure Water,” The
Eighth International Symposium on Semiconductor Manufacturing, Proceedingof ISSM99, pp. 453-456, Santa Clara, October 1999.

E863-1 (C)T. Kezuka, M. Itano and T. Ohmi, “The Control of Etching Rate for Various
SiO2 Films,” Extended Abstracts, The 1999 Joint International Meeting (196th
Meeting of The Electrochemical Society, and 1999 Fall Meeting of The
Electrochemical Society of Japan with technical cosponsorship of the Japan
Society of Applied Physics), Abstract No. 1078, Vol. 99-2, Honolulu, Hawaii,
October 1999.

E863-2 (P)T. Kezuka, M. Itano, and T. Ohmi, “The Control of Etching Rate for Various
SiO2 Films,” Cleaning Technology in Semiconductor Device Manufacturing Ⅵ,
Edited by R.E. Novak, J. Ruzyllo, T. Hattori, Vol. 99-36, Pennington, NJ, pp.
244-251, 2000.

E864 (C)

Tatsuhiro Yabune, Hirohisa Kikuyama, Masayuki Miyashita, and Tadahiro
Ohmi, “Wet Etching of BPSG Films,” Extended Abstracts, The 1999 Joint
International Meeting (196th Meeting of The Electrochemical Society, and 1999
Fall Meeting of The Electrochemical Society of Japan with technicalcosponsorship of the Japan Society of Applied Physics), Abstract No. 1079, Vol.
99-2, Honolulu, Hawaii, October 1999.

E865-1 (C)G. M. Choi, K. Sekine, H. Morita, J. S. Kim, and T. Ohmi, “Dependence of
Copper Impurity Revoval Efficency on Etching Rate for Various Substrates inHydrofluoric Solutions,” Extended Abstracts, The 1999 Joint International
Meeting (196th Meeting of The Electrochemical Society, and 1999 Fall Meetingof The Electrochemical Society of Japan with technical cosponsorship of theJapan Society of Applied Physics), Abstract No. 1081, Vol. 99-2, Honolulu,
Hawaii, October 1999.

E865-2 (P)Geun-Min Choi, Hiroshi Morita, Hitoshi Morinaga, Jong-Soo Kim, andTadahiro Ohmi, “Dependence of Copper Impurity Removal Efficency on
Substrates Etching Rate for Various Substrates in Hydrofluoric Solutions,”
Cleaning Technology in Semiconductor Device Manufacturing Ⅵ, Edited by
R.E. Novak, J. Ruzyllo, T. Hattori, Vol. 99-36, Pennington, NJ, pp. 272-279,
2000.

E866 (C)Masayuki Miyashita, Tadahiro Ohmi, Tatsuhiro Yabune, and Hirohisa
Kikuyama, “Perfect Controlled Etching for Wall of Contact Hole,” Extended
Abstracts, The 1999 Joint International Meeting (196th Meeting of The
Electrochemical Society, and 1999 Fall Meeting of The Electrochemical
Society of Japan with technical cosponsorship of the Japan Society of Applied
Physics), Abstract No. 1094, Vol. 99-2, Honolulu, Hawaii, October 1999.

E867-1(C)

Hiroshi Morita, Toshihiro Ii, Jun-ichi Ida, and Tadahiro Ohmi, “Total Room
Temperature Wet Cleaning Process Based on Specific Gases Dissolved
Ultrapure Water,” Extended Abstracts, The 1999 Joint International Meeting(196th Meeting of The Electrochemical Society, and 1999 Fall Meeting of The
Electrochemical Society of Japan with technical cosponsorship of the Japan
Society of Applied Physics), Abstract No. 1113, Vol. 99-2, Honolulu, Hawaii,
October 1999.

E867-2 (P)Hiroshi Morita, Toshihiro Ii, Jun-ichi Ida, and Tadahiro Ohmi, “Total Room
Temperature Wet cleaning Process Based on Specific Gases Dissolved
Ultrapure Water,” Cleaning Technology in Semiconductor Device
Manufacturing Ⅵ, Edited by R.E. Novak, J. Ruzyllo, T. Hattori, Vol. 99-36,
Pennington, NJ, pp. 45-50, 2000.

E868-1 (C)Senri Ojima, Takayuki Jizaimaru, Shunkichi Omae, and Tadahiro Ohmi,“Room Temperature Photoresist Stripping and Residue Removal Technology,”
Extended Abstracts, The 1999 Joint International Meeting (196th Meeting of
The Electrochemical Society, and 1999 Fall Meeting of The Electrochemical
Society of Japan with technical cosponsorship of the Japan Society of Applied
Physics), Abstract No. 1119, Vol. 99-2, Honolulu, Hawaii, October 1999.

E868-2 (P)Senri Ojima, Takayuki Jizaimaru, Shunkichi Omae, Toshikazu Abe, andTadahiro Ohmi, “Room Temperature Photoresist Stripping and Residue
Removal Technology,” Cleaning Technology in Semiconductor Device
Manufacturing Ⅵ, Edited by R.E. Novak, J. Ruzyllo, T. Hattori, Vol. 99-36,
Pennington, NJ, pp. 227-234, 2000.

E869-1 (C)Kenichi Mitsumori, Nobuaki Haga, Yasuhiko Kasama, Norihira Takahashi,
Takashi Imaoka, and Tadahiro Ohmi, “Advanced Wet Cleaning Method with
One Tenth Quantity of Cleaning Solution,” Extended Abstracts, The 1999 Joint
International Meeting (196th Meeting of The Electrochemical Society, and 1999
Fall Meeting of The Electrochemical Society of Japan with technicalcosponsorship of the Japan Society of Applied Physics), Abstract No. 1137, Vol.
99-2, Honolulu, Hawaii, October 1999.

E869-2 (P)Kenichi Mitsumori, Nobuaki Haga, Yasuhiko Kasama, Norihira Takahashi,
Takashi Imaoka, and Tadahiro Ohmi, “Advanced Wet Cleaning Method with
One Tenth Quantity of Cleaning Solution,” Cleaning Technology in
Semiconductor Device Manufacturing Ⅵ, Edited by R.E. Novak, J. Ruzyllo, T.
Hattori, Vol. 99-36, Pennington, NJ, pp. 37-44, 2000.

E870 (C)O. Nakamura, T. Ohkawa, M. Nakagawa, Y. Shirai, K. Kawada, N. Ikeda, Y.
Minami, A. Morimoto, and T. Ohmi, “Highly Reliable Ultra Thin Gate Oxide
Grown using Water Vapor Generator,” Abstract, AVS 46th International
Symposium, p. 32, Seattle, invited, October 1999.

E871 (C)K. Sekine, Y. Saito, M. Hirayama, and T.Ohmi, “High-integrity Ultra-thin
Silicon Nitride Film Grown by Plasma Nitridation of Silicon Surface at
Low-temperature for Giga Scale Devices,” Abstract, AVS 46th International
Symposium, p. 32, Seattle, October 1999.

E872 (C)M. Nagase, O. Nakamura, M. Kitano, Y. Shirai, and T. Ohmi, “Gas Distribution
System using an Advanced Flow Controller,” Abstract, AVS 46th International
Symposium, p. 33, Seattle, October 1999.

E873 (C)T. Ohmi, M. Hirayama, and Y. Shirai, “Proposal of New Paradigm LSI
Structures and Their Manufacturing,” Abstract, AVS 46th International
Symposium, p. 66, Seattle, invited, October 1999.

E874 (F)Guen-Min Choi, Hiroshi Morita, Jong-Soo Kim, and Tadahiro Ohmi, “TheNature of Metallic Contamination on Various Silicon Substrates,” IEICE Trans.
Electron., Vol. E82-C, No. 10, pp. 1839-1845, October 1999.

E875 (F)Jong-Soo Kim, Hiroshi Morita, Guen-Min Choi, and Tadahiro Ohmi, “Cleaning
Efficiencies of Various Chemical Solutions for Noble Metals such as Cu, Ag,
and Au Si Wafer Surfaces,” Journal of The Electrochemical Society, Vol. 146,
No. 11, pp. 4281-4289, November 1999.

E876 (W)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi,“Low-Temperature Growth of Ultra-Thin Silicon Nitride Films for Extending
Scaling Limit of Silicon Oxide”, the 10th Microelectronics Conference
Proceeding, pp.69-72, November 1999.

E877 (F)Isao Akutsu and Tadahiro Ohmi, “Innovation of the fore pump and roughingpump for high-gas-flow semiconductor processing,” J. Vac. Sci. Technol. A,
Vol. 17, No. 6, pp. 3505-3508, November/December 1999.

E878 (M)Tadahiro Ohmi, Tadashi Shibata, Koji Kotani, Tsutomu Nakai, Akira Nakada,Ning Mei Yu, Masahiro Konda, Tatsuo Morimoto, and Yuichiro Yamashita,“Association Hardware for Intelligent Electronic Systems,” Systems andComputers in Japan, vol. 30, No. 12, pp. 52-62, December 1999.

E879 (C)Tadahiro Ohmi, Katsuyuki Sekine, Yuji Saito, Hiroaki Tanaka, and Masaki
Hirayama, “Novel TFT Manufacturing with Microwave Excited High-density
and Low Electron Temperature Plasma,” Proceedings of The Sixth International
Display Workshops, pp. 159-162, Sendai, invited, December 1999.

E880 (C)

Masaki Hirayama, Katsuyuki Sekine, Yuji Saito, and Tadahiro Ohmi,“Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen
Radical Generated in High-Density Krypton Plasma,” Technical Digest,
International Electron Devices Meeting, pp.249-252, Washington D.C.,
December 1999.

E881 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A nonlinear cepstralcompensation method for noisy speech processing,” Technical Report of
IEICE, (The Institute of Electronics, Information and Communication
Engineers), NLC99-35, SP99-103, pp. 61-65, December 1999.

E882 (M)Tsutomu Nakai, Takeo Yamashita, Tadahiro Ohmi, and Tadashi Shibata,“Neuron-MOS Parallel Search Hardware for Real-Time Signal Processing,”
Analog Integrated Circuits and Signal Processing, Vol. 21, pp. 173-191, 1999.

E883 (B)

Tadahiro Ohmi, “New Paradigm in Semiconductor Industry---Breakthroughfor Everlasting Prosperity of Semiconductor Industry,” Ultra Clean
Technology, Vol. 11, Supplement 1, December 1999.