Prof. Ohmi's Paper
January－December, 2000
E884 (C)T. Nozawa, M. Konda, M. Fujibayashi, M. Imai, and T. Ohmi, “A Parallel
Vector Quantization Processor Eliminating Redundant Calculations for
Real-time Motion Picture Compression,” 2000 IEEE International
Solid-State Circuits Conference, Digest of Technical Papers, pp. 234-235,
San Francisco, February 2000.

E885 (F)

Takeo Ushiki, Koji Kotani, Toshihiko Funaki, Kunihiro Kawai, andTadahiro Ohmi, “New Aspect and Mechanism of Kink Effect in Static
Back-Gate Transconductance Characteristics in Fully-Depleted SOI
MOSFET’s on High-Dose SIMOX Wafers,” IEEE Transactions on Electron
Devices, Vol. 47, No. 2, pp. 360-366, February 2000.

E886 (F)Yoshio Ishihara, Daiji Nakajima, and Tadahiro Ohmi, “Economical Clean
Dry Air System for Closed Manufacturing System,” IEEE Transactions on
Semiconductor Engineering, Vol. 13, No. 1, pp. 16-23, February 2000.

E887 (C)Satoshi Kawada, Yukio Tamai, Shunkichi Omae, and Tadahiro Ohmi,“Effectof surfactant-added developer on development of chemically amplified
photoresist,”Proceedings of SPIE Advances in Resist Technology andProcessing XVII, Vol. 3999, pp. 717-725, Santa Clara, February-March
2000.

E888 (C)Tadahiro Ohmi, “Advances in the Use of UPW in Wafer Cleaning,” 2000
Semiconductor Pure Water and Chemical Conference, pp. 1-13, Santa Clara,
invited, March 2000.

E889 (C)Ken-ichi Mitsumori, Tadahiro Ohmi, Nobuaki Haga, Yasuhiko Kasama,
Norihisa Takahashi, and Takashi Imaoka, “Advanced Wet Cleaning
Technology For Next Generation FPD Manufacturing,” 2000 Semiconductor
Pure Water and Chemical Conference, pp. 318-328, Santa Clara, invited,
March 2000.

E890 (C)Ikunori Yokoi, Toshihiro Ii, and Tadahiro Ohmi, “A Hydrogen-Dissolved
Water Application In Wet Cleaning Technology,” 2000 Semiconductor Pure
Water and Chemical Conference, pp. 329-344, Santa Clara, March 2000.

E891 (C)Senri Ojima, Takahisa Nitta, Nobuhiro Miki, Toshikazu Abe, and Tadahiro
Ohmi,“Photoresist Stripping Technology Utilizing Water Vapor,” 2000
Semiconductor Pure Water and Chemical Conference, pp. 387-398, Santa
Clara, March 2000.

E892 (F)Yukio Tamai, Mauricio Massazumi Oka, Akira Nakada, and Tadahiro Ohmi,“Influence of substrate dopant concentration on electrical properties andresidual defects in pn junction formed by low-temperature post-implantation
annealing,” J. Appl. Phys., Vol. 87, No. 7, pp. 3488-3496, April 2000.

E893 (C)Takahiro J. Yamaguchi, Mani Soma, Masahiro Ishida, Toshifumi Watanabe,
and Tadahiro Ohmi, “Extraction of Peak-to-Peak and RMS Sinusoidal Jitter
Using an Analytic Signal Method,” Proceedings of the 18th IEEE VLSI Test
Symposium, pp. 395-402, Montreal, Canada, April-May 2000.

E894-1 (C)Takeshi OHKAWA, Osamu NAKAMURA, and Tadahiro OHMI,“Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened
Si (100) Surface,” Extended Abstracts, The 197th Meeting of The
Electrochemical Society, Abstract No. 452, Vol. 2000-I, Toronto, Canada,
May 2000.

E894-2 (P)Osamu Nakamura, Takeshi Ohkawa, and Tadahiro Ohmi, “Improvement ofGate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface,”
The Physics and Chemistry of SiO2 and The Si-SiO2 Interface-4, Edited by H.
Z. Massoud, I. J. R. Baumvol, M. Hirose and E. H. Poindexter, PV2000-2,
The Electrochemical Society, Pennington, NJ, pp.101-112, 2000.

E895-1 (C)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi,“Low-temperature Formation of Gate-grade Silicon Oxide Films using
High-Density Krypton Plasma,” Extended Abstracts, The 197th Meeting of
The Electrochemical Society, Abstract No. 453, Vol. 2000-I, Toronto,
Canada, May 2000.

E895-2 (P)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi,“Low-temperature formation of gate-grade silicon oxide films using
high-density krypton plasma,” The Physics and Chemistry of SiO2 and The
Si-SiO2 Interface-4, Edited by H. Z. Massoud, I. J. R. Baumvol, M. Hirose
and E. H. Poindexter, PV2000-2, The Electrochemical Society, Pennington,
NJ, pp. 113-124, 2000.

E896 (C)Yuji Saito, Katsuyuki Sekine, Naoki Ueda, Masaki Hirayama, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Advantage of Radical Oxidation for
Improving Reliability of Ultra-Thin Gate Oxide,” 2000 Symposium on VLSITechnology Digest of Technical Papers, pp. 176-177, Honolulu, June 2000.

E897 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A On-Line Hierarchical
Method of Speaker Identification for Large Population,” 2000 IEEE Nordic
Signal Processing Symposium, pp. 33-36, Sweden, June 2000.

E898 (C)Tadahiro Ohmi, Shigetoshi Sugawa, Masaki Hirayama, and Yasuyuki Shirai,“Contamination Reduction for 300mm Processes,” Semicon West
2000:Symposium on Contamination-Free Manufacturing (CFM) for
Semiconductor Processing, pp. A1-A5, San Francisco, keynote, July 2000.

E899 (C)Tadahiro Ohmi, “Semiconductor ultra fine processing & planarization
technology,” 30 th Workshop on Ultra Clean Technology: Fundamentals of
Chemical-Mechanical Polishing, pp. 1-8, Tokyo, July 2000.

E900 (P)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A speech indexing system forrecorded audio source based on speaker identification technique,” Advancesin Intelligent Systems: Theory and Applications, Edited by Masoud
Mohammadian, IOS Press, Ohmsha, pp. 239-243, 2000.

E901 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A novel method of speaker
identification for large population by pre-learning of test utterance using
vector quantization,” Proceedings, World Multiconference on Systemics,
Cybernetics and Informatics, Vol. VI, Part II, pp. 48-51, Orland, July 2000.

E902 (F)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi,“Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature
by Microwave-Excitation High-Density Plasma for Giga Scale Integration,”
IEEE Transactions on Electron Devices, Vol. 47, No. 7, pp. 1370-1374, July
2000.

E903(C)

Tatsuhiro Nanbu, Katsuyuki Sekine, Yuji Saito, Shin-ichi Nakao, Masaki
Hirayama, and Tadahiro Ohmi, “Ultra-Thin Silicon Oxynitride Films as Cu
Diffusion Barrier for Lowering Interconnect Resistivity,”Extended Abstractsof the 2000 International Conference on SOLID STATE DEVICES and
MATERALS, pp. 32-33, Sendai, August 2000.

E904(C)

Ikunori Yokoi, Geun-Min Choi, and Tadahiro Ohmi, “An Advanced Room
Temperature Cleaning Using a pH Controlled Ozonated Ultrapure Water,”
Extended Abstract of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 172-173, Sendai, August 2000.

E905 (C)Geun-Min Choi, Francesco Pipia, and Tadahiro Ohmi, “Strategy in Cleaning
Processes for Future Materials,” Extended Abstracts of the 2000
International Conference on SOLID STATE DEVICES and MATERALS,
pp. 174-175, Sendai, August 2000.

E906(C)

Kazuo Ohtsubo, Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Shigetoshi
Sugawa, Herzl Aharoni, and Tadahiro Ohmi, “Ultra-Thin Silicon Oxynitride
Film Grown at Low-Temperature by Microwave-Excited High-Density
Kr/O2/N2 Plasma,” Extended Abstracts of the 2000 International Conference
on SOLID STATE DEVICES and MATERALS, pp. 176-177, Sendai,
August 2000.

E907 (C)

Tatsufumi Hamada, Yuji Saito, Katsuyuki Sekine, Herzl Aharoni, andTadahiro Ohmi, “Low Temperature Gate Oxidation MOS Transistor
Produced by Kr/O2 Microwave Excited High-Density Plasma,” Extended
Abstracts of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 184-185, Sendai, August 2000.

E908 (C)

Hiroshi Arakawa, Yasuyuki Shirai, and Tadahiro Ohmi, “Perfectly Etching
Uniformity Control of Various Doped Oxide Films Using an Anhydrous HF
Gas,” Extended Abstracts of the 2000 International Conference on SOLID
STATE DEVICES and MATERALS, pp. 196-197, Sendai, August 2000.

E909 (C)

Masafumi Kitano, Yasuyuki Shirai, Atsushi Ohki, and Tadahiro Ohmi,“Impurity Measurement in Specialty Gases Using Atmospheric Pressure
Ionization Mass Spectrometer with Two Compartments Ion Source,”
Extended Abstracts of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 200-201, Sendai, August 2000.

E910 (C)Toshiyuki Nozawa, Makoto Imai, Kenji Mochizuki, and Tadahiro Ohmi,“Eliminating
Needless
Calculationson
Circuit
Level:
Most-Significant-Digit-First Digit-Serial Processing,” Extended Abstracts ofthe 2000 International Conference on SOLID STATE DEVICES and
MATERALS, pp. 354-355, Sendai, August 2000.

E911 (C)Satoshi Sakaidani, Naoto Miyamoto, and Tadahiro Ohmi, “A Dynamically
Reconfigurable Processor with Multi-Mode Operation Based on Newly
Developed Full-Adder/D-Flip-Flop Merged Module (FDMM),” Extended
Abstracts of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 358-359, Sendai, August 2000.

E912 (C)K. Higashi, T. Ohmi, A. O. Adan, H. Morimoto, K. Niimi, T. Ashida, and S.
Sugawa, “Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using
Body-Bias-Control Technology,” Extended Abstracts of the 2000
International Conference on SOLID STATE DEVICES and MATERALS,
pp. 376-377, Sendai, August 2000.

E913 (C)Kei Kanemoto, Herzl Aharoni, and Tadahiro Ohmi, “Ultra-Shallow and
Low-Leakage p+n Junctions Formation by Plasma Immersion Ion
Implantation (PIII) and Low-Temperature Post- Implantation Annealing,”
Extended Abstracts of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 406-407, Sendai, August 2000.

E914 (C)Akihiro Morimoto, Koji Kotani, Shigetoshi Sugawa, and Tadahiro Ohmi,“Interconnect and Substrate Structure for High Speed Giga-Scale
Integration,” Extended Abstracts of the 2000 International Conference on
SOLID STATE DEVICES and MATERALS, pp. 418-419, Sendai, August
2000.

E915 (C)K. Takahashi, H. Nohira, T. Nakamura, T. Ohmi and T. Hattori,“SiO2/Si(111) Interface Structures Formed by Atomic Oxygen,”Extended
Abstracts of the 2000 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 434-435, Sendai, August 2000.

E916 (C)

Hiroyuki Shimada, Ichiro Ohshima, Takeo Ushiki, Shigetoshi Sugawa, andTadahiro Ohmi, “Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate
CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer
Layer,” Extended Abstracts of the 2000 International Conference on SOLID
STATE DEVICES and MATERALS, pp. 460-461, Sendai, August 2000.

E917 (C)Yoshihide Wakayama, Takeshi Ohkawa, Osamu Nakamura, Sadao
Kobayashi, Shigetoshi Sugawa, Herzl Aharoni, and Tadahiro Ohmi, “The
Effect of Organic Compounds Contamination on the Electrical
Characteristics of Ultra-Thin Gate Oxide Films,” Extended Abstracts of the2000 International Conference on SOLID STATE DEVICES and
MATERALS, pp. 550-551, Sendai, August 2000.

E918-1 (C)Francesco Pipia, Geun-Min Choi, and Tadahiro Ohmi, “Metal Wet Cleaning
with No Corrosion: A Novel Approach,” Fifth International Symposium on
Ultra Clean Processing of Silicon Surfaces (UCPSS 2000), Abstract Book,
pp. 43-44, Ostende, Belgium, September 2000.

E918-2 (P)Francesco Pipia, Geun-Min Choi, and Tadahiro Ohmi, “Metal Wet Cleaning
with No Corrosion: A Novel Approach,” Solid State Phenomena, Vols.
76-77, pp. 35-38, 2001.

E919-1 (C)Ikunori Yokoi, Geun-Min Choi, Yoshio Yamazaki, and Tadahiro Ohmi, “A
Hydrogenated Water Application to Semiconductor Manufacturing,” Fifth
International Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS 2000), Abstract Book, pp. 65-66, Ostende, Belgium, September
2000.

E919-2 (P)Ikunori Yokoi, Geun-Min Choi, Yoshio Yamazaki, and Tadahiro Ohmi, “A
Hydrogenated Water Application to Semiconductor Manufacturing,” Solid
State Phenomena, Vols.76-77, pp. 71-74, 2001.

E920-1 (C)Takeo Hattori, Kensuke Takahashi, Hiroshi Nohira, and Tadahiro
Ohmi,“Layer-by-layer oxidation of silicon by atomic and molecularoxygen,”Fifth International Symposium on Ultra Clean Processing of Silicon
Surfaces (UCPSS 2000), Abstract Book, pp. 104-105, Ostende, Belgium,
September 2000.

E920-2 (P)T. Hattori, K. Takahashi, H. Nohira, and T. Ohmi, “Layer-By-Layer
Oxidation of Silicon,” Solid State Phenomena, Vols. 76-77, pp. 139-144,
2001.

E921-1 (C)Toshikazu Abe and Tadahiro Ohmi, “Photo Resist Stripping Using An
Alkaline Accelerator Containing Wet-Vapor,” Fifth International
Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000),
Abstract Book, pp. 153-154, Ostende, Belgium, September 2000.

E921-2 (P)Toshikazu Abe, Senri Ojima, Takahisa Nitta, Nobuhiro Miki, and Tadahiro
Ohmi, “Photo Resist Stripping Using An Alkaline Accelerator Containing
Wet-Vapor,” Solid State Phenomena, Vols. 76-77, pp. 231-234, 2001.

E922-1 (C)Hiroshi Morita, Jun-ichi Ida, Osamu Ota, Kazumi Tsukamoto, and Tadahiro
Ohmi, “Particle Removal Mechanism of Hydrogenated Ultrapure Water
with Megasonic Irradiation,” Fifth International Symposium on Ultra Clean
Processing of Silicon Surfaces (UCPSS 2000), Abstract Book, pp. 160-161,
Ostende, Belgium, September 2000.

E922-2 (P)Hiroshi Morita, Jun-ichi Ida, Osamu Ota, Kazumi Tsukamoto, and Tadahiro
Ohmi, “Particle Removal Mechanism of Hydrogenated Ultrapure Water with
Megasonic Irradiation,” Solid State Phenomena, Vols. 76-77, pp. 245-250,
2001.

E923-1 (C)Geun-Min Choi, Ikunori Yokoi, and Tadahiro Ohmi ,“The Role of Oxidant
in HF-Based Solution for Noble Metal Removal from Substrate,” Fifth
International Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS 2000), Abstract Book, pp. 170-171, Ostende, Belgium, September
2000.

E923-2 (P)Geun-Min Choi, Ikunori Yokoi, and Tadahiro Ohmi, “The Role of Oxidant
in HF-Based Solution for Noble Metal Removal from Substrate,” Solid
State Phenomena, Vols. 76-77, pp. 267-270, 2001.

E924 (C)Ryu Kaihara, Masaki Hirayama, Shigetoshi Sugawa, and Tadahiro Ohmi,“Damage-free Contact Etching using Balanced Electron Drift Magnetron
Etcher,”The
Ninth International Symposium on Semiconductor
Manufacturing, Proceeding of ISSM2000, pp. 102-105, Tokyo, September
2000.

E925 (C)

Hirokazu Suzuki, Hideo Hanaoka, Yoshinori Ohkubo, Yoshio Yamazaki,
Yasuyuki Shirai, and Tadahiro Ohmi, “Energy Saving in Semiconductor
Fabs by Out-Air Handling Unit Performance Improvement,” The Ninth
International Symposium on Semiconductor Manufacturing, Proceeding of
ISSM2000, pp. 293-296, Tokyo, September 2000.

E926 (C)Ikunori Yokoi, Yoshio Yamazaki, Toshikazu Abe, and Tadahiro Ohmi,“Application of Hydrogenated Water to Future Cooling System,” The Ninth
International Symposium on Semiconductor Manufacturing, Proceeding of
ISSM2000, pp. 297-300, Tokyo, September 2000.

E927 (C)

Ichiro Ohshima, Yoshio Ishihara, Isao Akutsu, and Tadahiro Ohmi, “Ultra
Clean Process Gas Recycling System for Plasma Process Using Krypton and
Xenon,”The Ninth International Symposium on Semiconductor
Manufacturing, Proceeding of ISSM2000, pp. 305-308, Tokyo, September
2000.

E928 (C)Ken-ichi Mitsumori, Haga Nobuaki, Norihisa Takahashi, Takashi Imaoka,
and Tadahiro Ohmi, “Advanced Wet Cleaning Using Novel Nozzle andFunctional Ultrapure Water in Next Generation,” The Ninth International
Symposium on Semiconductor Manufacturing, Proceeding of ISSM2000, pp.
329-332, Tokyo, September 2000.

E929 (F)Kunkul Ryoo, Wataru Shindo, Masaki Hirayama, and Tadahiro Ohmi,“Analysis of Epitaxy of Polysilicon Films on Silicon (100) Wafers Deposited
with Enlarged Microwave Plasma,” Journal of The Electrochemical Society,Vol. 147, No. 10, pp. 3859-3863, October 2000.

E930 (C)Y. Wakayama, S. Kobayashi, T. Ishii, S. Sugawa, and T. Ohmi, “The
Effect of Molecular Weight of Organic Contaminants on their Adsorption on
Si-wafers,” AVS 47th International Symposium, p. 232, Boston, October
2000.

E931(C)

Zhibin Pan, Koji Kotani, Tadahiro Ohmi, “A Fast Search Method of Speaker
Identification for Large Population Using Pre-selection and Hierarchical
Matching,” 6th International Conference on Spoken Language Processing,
pp.290-293, China, October 2000.

E932 (F)

Takeo Ushiki, Kunihiro Kawai, Ichiro Ohshima, and Tadahiro Ohmi,“Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate
MOS Devices: An Effect Of Self-Sealing Barrier Configuration Interposed
Between Ta and SiO2,” IEEE Trans. on Electron Devices, Vol.47, No.11,
pp.2201-2207, November 2000.

E933(C)Y.Saito, K.Sekine, M.Hirayama, S.Sugawa, H.Aharoni, and T.Ohmi,“High-Reliability Ultra-Thin Gate Oxide Grown At Low-Temperature(400 ℃ ) Using Microwave-Excited High-Density Krypton Plasma,”International Conference on Materials Science and Technologies, pp.43,
Israel, November 2000.

E934(C)O.Nakamura, Y.Shirai, K.Kawada, N.Ikeda, H.Aharoni, and T.Ohmi, “A
New Approach for Obtaining Highly Reliable Wet Oxidation Process in
Microelectronics Using Catalythic Water Vapor Generator (WVG) System,”International Conference on Materials Science and Technologies, pp.44,
Israel, November 2000.

E935(C)

T.Ohkawa, O.Nakamura, H.Aharoni, and T.Ohmi, “Improvement of MOS
Device Reliability and Performance by Atomic Order Flattening of Si(100)Surface and Si-SiO2 Interface Selective Nitridation,” International
Conference on Materials Science and Technologies, pp.67, Israel, November
2000.

E936(C)K.Kanemoto, H.Aharoni, and T.Ohmi, “Plasma Immersion Ion Implantation(PIII) Technique and Low-Temperature Post-Implantation Annealing for theFormation of Ultra-Shallow Source/Drain Junctions,” International
Conference on Materials Science and Technologies, pp.68, Israel, November
2000.

E937(C)

T.Hamada, Y.Saito, K.Sekine, H.Aharoni, and T.Ohmi, “MOS Transistors
on Different Si Oriented Surfaces Fabricated with Low Temperature Gate
Oxide for Future System on Glass Realization,” International Conference on
Materials Science and Technologies, pp.69, Israel, November 2000.

E938(C)

Kazuo Ohtsubo, Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Shigetoshi
Sugawa, Herzl Aharoni, and Tadahiro Ohmi, “Low Temperature (400℃)
Improved Ultra-Thin Oxynitride Films for MOS Gate Insulators,”
International Conference on Materials Science and Technologies, pp.123,
Israel, November 2000.

E939(C)Kei Kanemoto, Tatsufumi Hamada, Herzl Aharoni, and Tadahiro Ohmi, “A
Simple One Chamber Parallel Plate Plasma Immersion Ion Implantation(PIII) System for the Formation of SI Electronic Devices with Ultra-Shallow
Junctions,”
International Conference on Materials Science andTechnologies, pp.126, Israel, November 2000.

E940(C)

Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Shigetoshi Sugawa, Herzl
Aharoni, and Tadahiro Ohmi, “Microwave-Excited High-Density Plasma
System for High-Quality Thin Dielectric Film Growth at
Low-Temperatures,” International Conference on Materials Science andTechnologies, pp.127, Israel, November 2000.

E941(C)

Yoshihide Wakayama, Takeshi Ohkawa, Osamu Nakamura, Herzl Aharoni,
and Tadahiro Ohmi, “Controlled Contamination Experiments of Gate Oxide
Surfaces by Organic Compounds and their Effect on the Reliability of M.O.S.
Devices,” International Conference on Materials Science and Technologies,
pp.130, Israel, November 2000.

E942(C)

Herzl Aharoni, Yukio Tamai, Akira Nakada, Oka Mauricio Massazumi, andTadahiro Ohmi, “Breakdown Mechanisms in Shallow and Ultra-Shallow
Ion-Implanted N+P Junctions,” International Conference on Materials
Science and Technologies, pp.132, Israel, November 2000.

E943(C)

Tadahiro Ohmi and Shigetoshi Sugawa, “Silicon Technology and Devices
for the 21st century,” Proceedings of the 3rd International Symposium on
Advanced Science and Technology of Silicon Materials, pp.1-6, Kona,
Hawaii, plenary talk, November 2000.

E944(C)

Tadahiro Ohmi and Shigetoshi Sugawa, “Ultra Short TAT Semiconductor
Manufacturing for Customer’s Needs,” The IT Revolution in Japan andTaiwan, Direction for the 21st Century, pp.128-132, Taiwan, November
2000.

E945 (F)Toshiyuki Nozawa, Masahiro Konda, Masanori Fujibayashi, Makoto Imai,
Koji Kotani, Shigetoshi Sugawa, and Tadahiro Ohmi, “A Parallel
Vector-Quantization Processor Eliminating Redundant Calculations for
Real-Time Motion Picture Compression,” IEEE Journal of Solid-State
Circuits, Vol.35, No.11, pp.1744-1751, November 2000.

E946 (L)

Takeo Ushiki, Hideaki Ishino, and Tadahiro Ohmi, “Effect of Starting SOIMaterial Quality on Low-Frequency Noise Characteristics in PartiallyDepleted Floating-Body SOI MOSFETs,” IEEE Electron Device Letters,
Vol.21, No.12, pp.610-612, December 2000.