Prof. Ohmi's Paper
January－December, 2002
E992(C)

Tadahiro Ohmi, Tatsuhiro Yabune, Akihiro Morimoto, Toshikuni Shinohara,
and Masaki Hirayama, “Large Size Display Simplified Manufacturing,” The
2nd International Display Manufacturing Conference, pp. 65-68, January 2002.

E993(C)

Yuji Saito, Katsuyuki Sekine, Ryu Kaihara, Masaki Hirayama, Shigetoshi
Sugawa, Herzl Aharoni, and Tadahiro Ohmi, “The Growth of Thin Oxide andNitride Films at Low Temperatures for Semiconductor Device Fabrication by
Microwave-Excited High-Density Plasma,” The 10th Israel Materials
Engineering Conference(IMEC-10), pp. 60, February 2002.

E994(F)

Takeshi Ohkawa, Osamu Nakamura, Herzl Aharoni, and Tadahiro Ohmi ,“Highly reliablegate oxidation using catalytic water vapor generator(WVG)for
MOS device fabrication,” Thin Solid Films, Vol. 405, pp. 290-299, March2002.

E995(F)

Hiroshi Sugawara, Yoshinori Tajima, and Tadahiro Ohmi, “A Study on
Reclaimed Photoresist Developer Using an Electrodialysis Method,” Jpn. J.
Appl. Phys., Vol. 41, Part 1, No.4B, pp. 2374-2379, April 2002.

E996(C)

Tadahiro Ohmi, “A Small Volume and Short TAT Semiconductor
Manufacturing Technology in SOC Era,” The 2nd Taiwan-Japan
Microelectronics International Symposium, April 2002.

E997 (F)Akihiro MORIMOTO, Koji KOTANI, Kazushi TAKAHASHI, Shigetoshi
SUGAWA, and Tadahiro OHMI, “Analysis of High-Speed Signal Behavior in a
Miniaturized Interconnect,” IEICE TRANSACTIONS on Electronics, Vol.
E85-C, No. 5, pp. 1111-1118, May 2002.

E998(C)

Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A HIERARCHICAL FAST
ENCODING ALGORITHM FOR VECTOR QUANTIZATION WITH PSNREQUIVALENT TO FULL SEARCH,” 2002 IEEE International Symposium
on Circuits and Systems, 02CH37353C, pp.I-797‐I-800, May 2002.

E999 (F)

Takahiro J.Yamaguchi, Dong Sam Ha, Masahiro Ishida, and Tadahiro Ohmi,“A Method for Compressing Test Data Based on Burrows-wheeler
Transformation,” IEEE Transactions on COMPUTERS, Vol. 51, No. 5, pp.
486-497, May 2002.

E1000(C)M.Fujibayashi, T.Nozawa, T.Nakayama, K.Mochizuki, M.Konda, K.Kotani,S.Sugawa, and T.Ohmi, “A Still Image Encoder Based on Adaptive Resolution
Vector Quantization Realizing Compression Ratio over 1/200 FeaturingNeedless Calculation Elimination Architecture,” 2002 SYMPOSIUM ON VLSICIRCUITS, DIGEST OF TECHNICAL PAPERS, pp.262-265, June 2002.

E1001(C)

T. Ohmi, Y.Shirai, Y.Kishida, K.Sugiyama, T.Imaoka, I.Yokoi, M.Kogure,“Instant Build-Up of Gas and Ultra-Pure Water Delivery System for 300mm
Single Wafer”, SEMI Technical Symposium (STS) ： Innovations in
Semiconductor Manufacturing (SEMICON West 2002), Technical programsfor the semiconductor equipment and materials industries, pp.3-27, July 2002.

E1002(C)Tadahiro Ohmi, “Promotion of University-Industry Collaboration forEstablishing Higher Technology Level Industry,” 6th International Conference
on Technology Policy and Innovation(ICTPI KANSAI 2002), pp. 57, August2002.

E1003(P)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A BLOCK PARTITIONING
VECTOR QUANTIZATION METHOD THROUGH POST－PROCESSINGTO ACHIEVE HIGHER PSNR, ” 2002 6th International Conference on Signal
Processing, Vol. Ⅰ of Ⅱ, pp. 644-647, August 2002.

E1004(F)Yoshiya Egashira, Kouji Kosaka, Tetsuya Iwabuchi, Tetsuya Kosaka, TetsuroBaba，Taishi Endo, Hiroyuki Hashiguchi, Takashi Harada, Keiichi Nagamoto,Masayuki Watanabe, Takahiro Yamakawa, Noburu Miyata, Shiro Moriyama,Yasuhiro Morizono, Akira Nakada, Hiroshi Kubota, and Tadahiro Ohmi,“Sub-Nanometer Resolution Ultrasonic Motor for 300mm Wafer Lithography
Precision Stage,” Jpn. J. Appl. Phys., Vol. 41, Part 1, No.9, pp. 5858-5863,
September 2002.

E1005(C)Koji Kotani, Chen Qiu, and Tadahiro Ohmi, “FACE RECOGNITION USING
VECTOR QUANTIZATION HISTOGRAM METHOD,” 2002 IEEE
International Conference on Image Processing, Vol.Ⅱof Ⅲ, pp. 105-108,
September 2002.

E1006(C)Naoto Miyamoto, Karnan Leo，Koji Kotani, and Tadahiro Ohmi, “A Fine－ Grained Programmable Logic Module with Small Amount ofConfiguraion
DataforDynamically
Reconfigurable
Field
Programmable Gate Array(FPGA),” Extended Abstracts of the 2002
International Conference on SOLID STATE DEVICES and MATERALS,
pp.248-249, September 2002.

E1007(C)

Hiroaki Tanaka, Zhong Chuanjie，Masaki Hirayama，Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “High Quality Silicon Oxide Film
Formed by Diffusion Region PECVD and Oxygen Radical Treatmentusing Microwave-Excited High-Density Plasma,” Extended Abstracts of the2002 International Conference on SOLID STATE DEVICES and MATERALS,
pp.424-425, September 2002.

E1008(C)Tetsuya Goto, Masaki Hirayama, Makoto Moriguchi, Shigetoshi Sugawa,and Tadahiro Ohmi, “A New Microwave-Excited Plasma Etching
Equipment separated Plasma Exicited Region from Etchikg ProcessRegion,” Extended Abstracts of the 2002 International Conference on SOLID
STATE DEVICES and MATERALS, pp.444-445, September 2002.

E1009(C)Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiro Yamada, Kiyoshi Funaiwa,Kentaro Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu
Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “A Ferroelectric Sr2(Ta１―a Low Dielectric Constant by Plasma PVD andx ， Nbx)2O ７ withOxygen Radical Annealing,” Extended Abstracts of the 2002 InternationalConference on SOLID STATE DEVICES and MATERALS, pp.618-619,
September 2002.

E1010(C)

Koutarou Tanaka, Kazufumi Watanabe, Hideki Ishino, Shigetoshi Sugawa,
Akinobu Teramoto, Masaki Hirayama, and Tadahiro Ohmi, “A Technologyof reducing Flicker Noise for ULSI application,” Extended Abstracts ofthe 2002 International Conference on SOLID STATE DEVICES andMATERALS, pp.702-703, September 2002.

E1011-1(C)Geun-Min Choi and Tadahiro Ohmi, “Metallic Impurity Contamination from
Tungusten Gate Cleaning,” Proceeding of Sixth International Symposium on
Ultra Clean Processing Of Silicon Surface, pp. 1/12, September 2002

E1011-2 (P)Geun-Min Choi and Tadahiro Ohmi, “Metallic Impurity Contamination from
Tungusten Gate Cleaning, ” Solid State Phenomena, Vol. 92, pp23-26,
September 2002.

E1012(C)Yoshio Ishihara, Tatsushi Urakami, Akihiro Nakamura, Hideharu Hasegawa,and Tadahiro Ohmi, “Recycling and Supply System with High Recovery Ratio
For Krypton Plasma Processes,” 2002 IEEE International Symposium onSemiconductor Manufacturing, pp. 77-80, October 2002.

E1013(C)

Hirokazu Suzuki, Kenji Muraoka, Kouichi Sato, Mitsuhara Miura, Yasuyuki
Shirai, and Tadahiro Ohmi, “Under Ground Structure Design of Fluctuation
Free Facility,” 2002 IEEE International Symposium on Semiconductor
Manufacturing, pp. 91-94, October 2002.

E1014(C)Teruyuki Hayashi, Takashi Kawaguchi, Yukihiro Kanechika, Naoki Tanahashi,
Misako Saito, Kaname Suzuki, Yoshihide Wakayama, Masaki Hirayama,Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi, “Organiccontamination behavior on the silicon wafer surface stored in new type plastic
pod under reduced pressure,” 2002 IEEE International Symposium onSemiconductor Manufacturing, pp. 169-172, October 2002.

E1015(C)Ikunori Yokoi, Takahiro Yonehata, Masahiko Kogure, Shinobu Tomikawa, andTadahiro Ohmi, “Development of Piping Microvibration Controlled Water
Supplying System,” 2002 IEEE International Symposium on Semiconductor
Manufacturing, pp. 177-180, October 2002.

E1016(C)

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa,
Kentarou Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu
Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “Oxygen Radical
Annealing Applied to Ferroelectric Thin Films,” Fourth International
Symposium on Control of Semiconductor Interfaces (ISCSI-4), pp.A4-6,
Karuizawa, October 2002.

E1017(C)Ichiro Ohshima, Weitao Cheng, Masaki Hirayama, Akinobu Teramoto,Hiroyuki Shimada, Yasuhiro Ono, Shigetoshi Sugawa, and Tadahiro Ohmi,“Highly Reliable Silicon Nitride Gate Dielectrics Grown at Low Temperature
by Microwave-Excited High-Density Plasma,” Fourth International Symposiumon Control of Semiconductor Interfaces(ISCSI-4), A5-2, Karuizawa, October
2002.

E1018(P)

Hideo Hanaoka, Souji Fukuda, Takeshi Honma, Yoshinori Okubo, Yasuyuki
Shirai, and Tadahiro Ohmi, “The energy-saving technology of Heating
Ventilating and Air-conditioning system,” International Symposium onSemiconductor Manufacturing2002(ISSM 2002), pp. 265-270, October 2002

E1019(P)

Masafumi Kitano, Kouji Yoshida, Isao Akutsu, Yoshio Ishihara, Tetsuya Goto,
Masaki Hirayama, Yasuyuki Shirai and Tadahiro Ohmi, “High Performanceand Low Cost Step-by-Step Investment Type Semiconductor Manufacturing
System,” International Symposium on Semiconductor Manufacturing
2002(ISSM 2002), pp. 313-316, October 2002

E1020(C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “A POST-PROCESSINGVECTOR QUANTIZATION METHOD THROUGH SOFTENING
CODEWORDS TO ACHIEVE A HIGHER PSNR,” 2002 IEEE International
Symposium on Intelligent Signal Processing and Communication
Systems(ISPACS2002), pp. 37-41, November 2002.

E1021(W)

Yoshio Yamazaki, Shigetoshi Sugawa, and Tadahiro Ohmi, “A New Profitable
Stage-Investment Type Fab Model for a System LSI Era,” the 13th
Microelectronics Conference Proceeding, pp.3-5, November 2002.

E1022(C)

Herzl Aharoni, Yukio Tamai, Akira Nakada, Mauricio Massazumi Oka, andTadahiro Ohmi, “Temperature Dependence of Reverse Breakdown
Voltages of n+p Si Ultra Shallow Junctions,” IEEE The 22nd Convention
of Electrical and Electronics Engineers in Israel, pp.50-52, December
2002.

E1023(C)

Kazuo Ohtsubo，Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl
Aharoni, and Tadahiro Ohmi, “LOW TEMPERATURE GROWTH (400℃)
OF HIGH-INTEGRITY THIN SILICON-OXYNITRIDE FILMS BY
MICROWAVE-EXCITED HIGH-DENSITY Kr/O2 /NH3PLASMA,”IEEE The 22nd Convention of Electrical and Electronics Engineers inIsrael, pp.166-169, December 2002.