Prof. Ohmi's Paper
January－December, 2007
E1230 (W)

T.Ohmi, “ULTRA HIGH-PERFORMANCE SILICON TECHNOLOGY REALIZED BYDAMAGE-FREE RADICAL REACTION BASED PROCESS,” PROCEEDINGS OF
THE JOINT INTERNATIONAL CONFERENCE OF 4TH INTERNATIONALSYMPOSIUMON
SYSTEM
CONSTRUCTIONOFGLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICSAND
STUDENT-ORGANIZINGINTERNATIONALMINI-CONFERENCE
ON
INFORMATION ELECTRONICS SYSTEM, Tohoku University, 21st Century COE
Program, pp.90-95, 448, January 2007.

E1231 (W)

T. Tate, H. Kanto, Y. Motohashi, T. kubo, S. Sugawa, K. Kotani and T. Ohmi, “ANOBJECT
EXTRACTION
CMOS
IMAGE
SENSOR
WITH
12-BIT
COLUMN-PAPALLEL ADCS AND ALUS,” PROCEEDINGS OF THE JOINTINTERNATIONAL CONFERENCE OF 4TH INTERNATIONAL SYMPOSIUM ON
SYSTEM
CONSTRUCTIONOFGLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICSAND
STUDENT-ORGANIZINGINTERNATIONAL MINI-CONFERENCE ON INFORMATION ELECTRONICS
SYSTEM, Tohoku University, 21st Century COE Program, pp.274-275, January 2007.

E1232 (W)

Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “CODEBOOK DESIGN BY
CLASSIFICATION OF CODE PATTERNS FOR HUMAN FACE RECOGNITION,”PROCEEDINGS OF THE JOINT INTERNATIONAL CONFERENCE OF 4TH
INTERNATIONAL SYMPOSIUM ON
SYSTEM
CONSTRUCTIONOFGLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICSAND
STUDENT-ORGANIZINGINTERNATIONALMINI-CONFERENCE
ON
INFORMATION ELECTRONICS SYSTEM, Tohoku University, 21st Century COE
Program, pp.376-377, January 2007.

E1233 (W)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “ROBUST SHOT CHANGE
DETECTION IN MPEG COMPRESSED VIDEO BASED ON ADJACENT PIXELINTENSITY
DIFFERENCEQUANTIZATIONHISTOGRAMMETHOD,”PROCEEDINGS OF THE JOINT INTERNATIONAL CONFERENCE OF 4TH
INTERNATIONAL SYMPOSIUM ON
SYSTEM
CONSTRUCTIONOFGLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICSAND
STUDENT-ORGANIZINGINTERNATIONALMINI-CONFERENCE
ON
INFORMATION ELECTRONICS SYSTEM, Tohoku University, 21st Century COE
Program, pp.378-379, January 2007.

E1234 (W)

H. Wakamatsu, I. Takahashi, A. Teramoto, T. Ohmi, “Preperation and Electrical
Properties of Ultrathin Stacked Si3N4/High-k Dielectric Pr3Si6N11 Films grown in Radical
Reaction Based MOCVD Systems,” PROCEEDINGS OF THE JOINTINTERNATIONAL CONFERENCE OF 4TH INTERNATIONAL SYMPOSIUM ON
SYSTEM
CONSTRUCTIONOFGLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICSAND
STUDENT-ORGANIZINGINTERNATIONAL MINI-CONFERENCE ON INFORMATION ELECTRONICS
SYSTEM, Tohoku University, 21st Century COE Program, pp.386-387, January 2007.

E1235(C)Roel Pantonial, Md. Ashfaquzzaman Khan, Naoto Miyamoto, Koji Kotani, Shigetoshi
Sugawa, Tadahiro Ohmi, “Improving Execution Speed of FPGA using Dynamically
Reconfigurable Technique,” Asia and South Pacific Design Automation Conference2007(ASP-DAC2007), 1D-9, pp. 108-109, January 2007.

E1236 (F)Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro
Ohmi,“Examination of degradation mechanism due to negative bias temperature stress froma perspective of hole energey for accurate lifetime prediction,” Microelectronics Reliability
47 (2007) 409-418, (2007 Elsevier Ltd. )E1237 (F)

Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi,“High quality gate insulator film formation on SiC using by microwave-excited
high-density plasma,” Microelectronics Reliability 47 (2007) 786-789, (2007 Elsevier
Ltd.) Feburuary 2007

E1238 (L)

Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Takuya
Maruizumi, Akinobu Teramoto, Tadahiro Ohmi and Takeo Hattori, “Subnitride and valenceband offset at Si3N4/Si interface formed using nitrogen-hydrogen radicals,” Applied Physics
Letters 90 Number 12, 123114-1-123114-3, March 2007.

E1239 (F)

Hiroshi IMAI, Akinobu TERAMOTO, Shigetoshi SUGAWA, and Tadahiro OHMI, “Lowleakage Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+ and B+
Dual Ion Implantation for Low Temperature Source-Drain Activation,” Japanese Journal ofApplied Physics Vol. 46, No. 4B, pp. 1848-1852, April 2007.

E1240 (F)Masaaki HIGUCHI, Takashi ARATANI, Tatsufumi HAMADA, Seiji SHINAGAWA,
Hiroshi NOHIRA, Eiji IKENAGA, Akinobu TERAMOTO, Takeo HATTORI, Shigetoshi
SUGAWA and Tadahiro OHMI, “Electric Characteristics of Si3N4 Films Formed by
Directly Radical Nitridation on Si(110) and Si(100) Surfaces,” Japanese Journal of Applied
Physics Vol. 46, No. 4B, pp. 1895-1898, April 2007.

E1241 (F)Syunichi WATABE, Shigetoshi SUGAWA, Akinobu TERAMOTO, and Tadahiro OHMI,“New Statistical Evaluation Method for the Variation of Metal-Oxide-Semiconductor Field
Effect Transistors,” Japanese Journal of Applied Physics Vol. 46, No. 4B, pp. 2054-2057,
April 2007.

E1242 (F)Tomoyuki Suwa, Hiroto TAKAHASHI, Yuki KUMAGAI, Genya FUJITA, Akinobu
TERAMOTO, Shigetoshi SUGAWA and Tadahiro OHMI, “Very Low Bit Error Rate inFlash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation,”
Japanese Journal of Applied Physics Vol. 46, No. 4B, pp. 2148-2152, April 2007.

E1243 (F)Ichirou TAKAHASHI, Kiyoshi FUNAIWA, Keita AZUMI, Satoru YAMASHITA,
Yasuyuki SHIRAI, Masaki HIRAYAMA, Akinobu TERAMOTO, Shigetoshi SUGAWA
and Tadahiro OHMI, “Development of Microwave-Exited Plasma-Enhanced
Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric
Sr2(Ta1-x,NBx)2O7 Thin Film on Amorphous Sio2,” Japanese Journal of Applied Physics Vol.
46, No. 4B, pp. 2200-2204, April 2007.

E1244 (F)Ichirou TAKAHASHI, Masaki HIRAYAMA, Shigetoshi SUGAWA and Tadahiro OHMI,“Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on
Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment
for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device,”
Japanese Journal of Applied Physics Vol. 46, No. 4B, pp. 2205-2210, April 2007.

E1245(F)Toru TAKEDA, Kouji TANAKA, Hirotada INOUE, Masaki HIRAYAMA, Toshirou
TSUMORI, Herzl AHARONI, and Tadahiro OHMI, “Microcrystalline/Amorphous Thin Si
Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen
Plasma and Silicon Radicals at Low Temperature (300℃) Chemical Vapor Deposition
Process,” Japanese Journal of Applied Physics Vol. 46, No. 4B, pp. 2542-2553, April 2007.

E1246 (C)Tetsuya Goto, and Tadahiro Ohmi, “Damage-Free, Uniform and High-Efficiency Novel
Magnetoron Sputtering Plasma Source for Large Substrate,” 211th Meeting of The
Electrochemical Society, No.74, CD-ROM, May 2007.

E1247-1 (C)Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi, “NBTI Mechanism Based on
Hole-Injection for Accurate Lifetime Prediction,” 211th Meeting of The Electrochemical
Society, No.664, CD-ROM, May 2007.

E1247-2 (P)Akinobu Teramoto, Rihito Kuroda, and Tadahiro Ohmi, “NBTI Mechanism Based on
Hole-Injection for Accurate Lifetime Prediction,” ECS Transactions Vol.6 No.3 Silicon
Nitride, Silicon Dioxide, and Emerging Dielectrics 9, pp.229-243, May 2007.

E1248-1 (C)W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa and T. Ohmi,“Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs
Fabricated on Si(110) Surface,” 211th Meeting of The Electrochemical Society, No.717,
CD-ROM, May 2007.

E1248-2 (P)W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa and T. Ohmi,“Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs
Fabricated on Si(110) Surface,” ECS Transactions Vol.6 No.4 Silicon-on-Insulator
Techonology and Devices 13, pp.101-106, May 2007.

E1249-1 (C)Rihito Kuroda, Akinobu Teramoto, Weitao Cheng, Shigetoshi Sugawa and Tadahiro Ohmi,“Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs
and Their Reliability Advantage,” 211th Meeting of The Electrochemical Society, No.719,
CD-ROM, May 2007.

E1249-2 (P)R. Kuroda, A. Teramoto, W. Cheng, S. Sugawa and T. Ohmi, “Hot Carrier Instability
Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability
Advantage,” ECS Transactions Vol.6 No.4 Silicon-on-Insulator Techonology and Devices
13, pp.113-118, May 2007.

E1250 (C)

Ichirou Takahashi, Tomoyuki Suwa, Keita Azumi, Tatsunori Isogai, Yasuyuki Shirai,
Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “Formationof Ferroelectric Sr2(Ta1-x,Nbx)2O7Film (STN) on SiON formed by microwave-excitedplasma and (Ba1-x,Srx)TiO3(BST) by rf sputtering applied to One-Transistor-Type
Ferroelectric Memory Device,” The 19th International Symposium of Integrated
Ferroelectrics (ISIF 2007), CD-ROM, May 2007.

E1251 (P)ICHIROU TAKAHASHI, KEITA AZUMI, YASUYUKI SHIRAI, MASAKI HIRAYAMA,
AKINOBU TERAMOTO, SHIGETOSHI SUGAWA, and TADAHIRO OHMI,“FabricationofPt/Sr2(Ta1-x,Nbx)2O7/SiO2/Si
Field-EffectTransistor
for
One-Transistor-Type Ferroelectric Random Access Memory,” Proceedings of the 6th
WSEAS International Conference on MICROELECTRONICS, NANOELECTRONICS,
OPTOELECTRONICS (MINO’07) Istanbul, Turkey, pp.37-43, May 2007.

E1252 (F)Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Hiroshi Tatekawa, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Accuracy and Applicability of Low-Frequency C-V
Measurement Methods for Characterization of Ultrathin Gate Dielectrics with Large
Current,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.54, NO.5,
pp.1115-1124, May 2007.

E1253 (C)M. Sugimura, H. Imai, M. Nakayama, M. Kawasaki, M. Fujimura, H. Oonuki, O.
Kawashima, A. Morimoto, A. Teramoto, S. Sugawa, and T. Ohmi, “The Influence ofInterconnect Line Patterns using Flat-Surface and Low-Dielectric-Loss Material under High
Speed Signal Propagation,” 57th Electronic Components and Technology Conference 2007,
pp.1714-1719, May 2007.

E1254 (F)

Akinobu Teramoto, Tatsufumi Hamada, Masashi Yamamoto, Philippe Gaubert, Hiroshi
Akahori, Keiichi Nii, Masaki Hirayama, Kenta Arima, Katsuyoshi Endo, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Very Hight Carrier Mobility for High-Performance CMOS
on a Si(110) Surface,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.54,
NO.6, pp.1438-1445, June 2007.

E1255 (F)Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, and Naoto Miyamoto, “Revolutional
Progress of Silicon Technologies Exhibiting Very High Speed Performance Over a 50-GHz
Clock Rate,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.54, NO.6,
pp.1471-1477, June 2007.

E1256 (W)

Kenichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Shunichi Watabe, Naoto, Miyamoto,
Akinobu Teramoto, Tadahiro Ohmi, Yutaka Kamata and Katsuhiko Shibusawa, “Analysis
of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG,” 2007
International Image Sensor Workshop, pp.62-65, Ogunquit, Maine, USA, June 2007.

E1257 (C)K. Abe, S. Sugawa, S.Watabe, N. Miyamoto, A. Teramoto, Y. Kamata, K. Shibusawa, M.
Toita and T. Ohmi, “Random Telegraph Signal Statistical Analysis using a Very
Large-scale Array TEG with 1M MOSFETs,” 2007 Symposium on VLSI Technology
Digest of Technical papers, pp.210-211, Kyoto, June 2007.

E1258 (F)Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa
Yamaha, Shigetoshi Sugawa and Tadahiro Ohmi, “Circuit Level Prediction of Device
Performance Degradation Due to Negative Bias Temperature Stress,” Microelectronics
Reliability 47 (2007), pp.930-936, (2007 Elsevier Ltd.) June 2007

E1259 (P)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “FAST ENCODING METHOD OFVECTOR QUANTIZATION BASED ON OPTIMAL SUBVACTOR PARTITION,”
Proceding of the 2007 15th International Conference on Digital Signal Processing(DSP2007), pp.415-418, DVD, July 2007.

E1260 (C)

Ichirou Takahashi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, andTadahiro Ohmi, “Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor
Deposition with Ion-Bombardment-Assistance for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7(STN) Thin Film,” Extended Abstracts of International Conference on Electroceramics(ICE2007), pp.92-93, July 2007.

E1261 (C)Zhibin Pan, Koji Kotani, Tadahiro Ohmi, “IMPROVED FAST ENCODING METHOD OFVECTOR QUANTIZATION BASED ON DYNAMIC ELEMENT REORDERING FOR
CODEWORDS,” Proceeding of 2007 European Conference on Circuit Theory and Design(ECCTD2007), pp.404-407, DVD, August 2007.

E1262-1 (C)W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama and T.Ohmi, “High Performance andhighly reliable novel CMOS devices using accumulation mode multi-gate and fully
depleted SOI MOSFETs,” Infos2007 Proceedings of the 15th Biennial Conference on
Insulating Films on Semiconsuctors, pp.2105-2108, June 2007.

E1262-2 (F)W. Cheng, A. Teramoto, R. Kuroda, M. Hirayama and T.Ohmi, “High Performance andhighly reliable novel CMOS devices using accumulation mode multi-gate and fully
depleted SOI MOSFETs,” Microelectronic Engineering Vol.84/9-10, pp.2105-2108,
September-October 2007.

E1263 (C)Ichirou Takahashi, Toshikuni Shinohara, Akinobu Teramoto, Masaki Hirayama, Shigetoshi
Sugawa, and Tadahiro Ohmi, “13.56 and 100 MHz Coupled Mode Rf-Sputtering for
Ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) Film Applied to One-Transistor-Type Ferroelectric
Random Access Memory,” Extended Abstracts of 11th European Meeting on
Ferroelectricity (EMF-2007), pp. 211, September, 2007.

E1264 (F)Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki, Yasuyuki Shirai
and Tadahiro Ohmi, “Development of Barrier Anodic Oxide Al2O3 Passivations of
Aluminum Alloy Surface for LSI/FPD Plasma Process Equipment,” Journal of theElectrochemical Society, Vol.154 No.9, pp. C530- C539, September 2007.

E1265 (P)P. Gaubert, W. Cheng, A. Teramoto and T. Ohmi, “Impact of the channel direction on the
1/f noise in SOI – MOSFETs fabricated on (100) and (110) silicon oriented wafers,” AIP
Conference Proceedings 19th International Conference on NOISE AND
FLUCTUATIONS-ICNF2007, pp.43-46, Tokyo, September 2007.

E1266 (P)K. Abe, S. Sugawa, S.Watabe, N. Miyamoto, A. Teramoto, M. Toita, Y. Kamata, K.
Shibusawa and T. Ohmi, “Statistical Analysis of RTS Noise and Low Frequency Noise in
1M MOSFETs Using an Advanced TEG,” AIP Conference Proceedings 19th International
Conference on NOISE AND FLUCTUATIONS-ICNF2007, pp.115-118, Tokyo, September,
2007.

E1267 (C)

Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu
Teramoto and Tadahiro Ohmi, “Characterization of Zinc Oxide Films Grown by a Newly
Developed Plasma Enhanced MOCVD Employing Microwave Excited High Destiny
Plasma,” Extended Abstracts of the 2007 International Conference on SOLID STATE
DEVICES and MATERIALS, pp.136-137, Tsukuba, September 2007.

E1268 (C)

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa
and Tadahiro Ohmi, “Low Contract Resistance with Low Schottky Barrier for N-Type
Silicon Using Yttrium Silicide,” Extended Abstracts of the 2007 International Conference
on SOLID STATE DEVICES and MATERIALS, pp.206-207, Tsukuba, September 2007.

E1269 (C)Azumi Itoh, Atsutoshi Inokuchi, Seiji Yasuda, Akinobu Teramoto, Tetsuya Goto, Masaki
Hirayama and Tadahiro Ohmi, “Low Dielectric Constant Non- Porous Fluorocarbon Films
for Inter-Layer Dielectric,” Extended Abstracts of the 2007 International Conference on
SOLID STATE DEVICES and MATERIALS, pp.378-379, Tsukuba, September 2007.

E1270(C)

Hiraku Ishikawa, Toshihisa Nozawa, Takaaki Matsuoka, Akinobu Teramoto, Masaki
Hirayama, Takashi Ito and Tadahiro Ohmi, “The Evaluation of New Amorphous
Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper
Metallization,” Extended Abstracts of the 2007 International Conference on SOLID STATE
DEVICES and MATERIALS, pp.380-381, Tsukuba, September 2007.

E1271(C)Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi, “Performance
Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic-and Accumulation- Mode
MOSFETs,” Extended Abstracts of the 2007 International Conference on SOLID STATE
DEVICES and MATERIALS, pp.412-413, Tsukuba, September 2007.

E1272 (C)

Ichiro Takahashi, Shigetoshi Sugawa, Tadahiro Ohmi, “Imprint properties of
IrO2/Sr2(Ta1-x,Nbx)2O7/SiO2/Si structure device formed by rf sputtering and oxygen radical
treatment,” EMRS 2007 Fall Meeting, European Materials Research Society, pp.306,
Warsaw, September 2007.

E1273 (W)

W. Cheng, A. Teramoto, R. Kuroda, C. Tye, T. Suwa, T Goto, F Imaizumi, S, Sugawa and
T. Ohmi, “High Performance Acculation Mode FD-SOI MOSFETs on Si(100) and(110)Surfaces,” IEICE Technical Report SDM 2007-187, pp.45-48, October 2007.

E1274-1 (C)W. Cheng, A. Teramoto and T. Ohmi, “Performance Boost Using a New Device Structure
Design for SOI MOSFETs Beyond 25nm Node,” 212th Meeting of The Electrochemical
Society, No.1309, CD-ROM, October 2007.

E1274-2 (P)W. Cheng, A. Teramoto and T. Ohmi, “Performance Boost Using a New Device Structure
Design for SOI MOSFETs Beyond 25nm Node,” Electrochemical Society Transactions
Vol.11 No.6 ULSI Process Integration 5, pp.349-355, October 2007.

E1275 (C)Rihito Kuroda, Akinobu Teramoto, Cheng Weitao, Shigetoshi Sugawa and Tadahiro Ohmi,“Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode
MOSFETs for Various SOI Layer Thickness and Impurity Concentrations,” 2007 IEEE
International SOI Conference, pp.55-56, Indian Wells, CA., October 2007.

E1276 (C)Satoshi Uemura, Kazunaki Iijima, Migaku Takahashi, Tadahiro Ohmi, “Estimate on CO2Emissions Reduction Effects Achieved by the Adoption of a Water Spray Humidification
System to Clean Rooms,” International Symposium on Semiconductor Manufacturing 2007
(ISSM 2007), pp.164-167, Santa Clara, CA, October 2007.

E1277 (C)K. Suzuki, Y. Ishihara, K. Sakoda, Y, Shirai, M. Hirayama, A. Teramoto, T. Ohmi, T.
Watanabe, “Development of a high efficiency PFC abatement system utilizing plasma andCa (OH)2 / CaO under a decompression atmosphere,” International Symposium on
Semiconductor Manufacturing 2007 (ISSM 2007), ES-P-111, pp.171-174, Santa Clara, CA,
October 2007.

E1278 (C)M. Yamawaki, T. Urakami, Y. Ishihara, Y, Shirai, A. Teramoto, T. Ohmi, “Development ofa Xenon Recycling and Supply System for Plasm Process,” International Symposium on
Semiconductor Manufacturing 2007 (ISSM 2007), ES-P-135, pp.175-178, Santa Clara, CA,
October 2007.

E1279 (C)Yuji Saito, Katsuyuki Sekine, Ryu Kaihara, Masaki Hirayama, Shigetoshi Sugawa, Herzl
Aharoni, Tadahiro Ohmi, “High Growth Rate of SiO2 Thin Films at Low Temperature(400 ℃ ) for Silicon Based Microelectronic Devices Using Plasma Techniques,” 26th
ISRAEL VACUUM SOCIETY ANNUAL CONFERENCE AND TECHNICALWORKSHOP, Poster No. P-ED-07, Herzliya, Israel, October 2007.

E1280 (C)Kouji Tanaka, Hirotada Inoue, Toru Takeda, Masaki Hirayama, Toshirou Tsumori, Herzl
Aharoni, Tadahiro Ohmi, “Multipurpose Plasma Assisted Deposition System for the
Growth of Thin Silicon-Based Insulating Films and Non- Crystalline Thin Silicon Films at
Low Temperatures,” 26th ISRAEL VACUUM SOCIETY ANNUAL CONFERENCE ANDTECHNICAL WORKSHOP, Poster No. P-VT-03, Herzliya, Israel, October 2007.

E1281 (W)

Tadahiro Ohmi, “Revolutional Progress of Silicon Technologies: Revolutional Progress ofDevice Perfoemance and Manufacturing Technologies,” The 7th Japan-Taiwan
Microelectronics International Symposium, pp.5-20, Tokyo, October 2007.

E1282 (W)

Tadahiro Ohmi, “Radical induced very high integrity gate insulator films for 3D transistors
on any crystal orientation Si surface,” Stanford & Tohoku University Joint Open Workshop
on 3D Transistor and its Applications, pp.131-149, November 2007.

E1283 (W)

Shigemi Murakawa, Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio
Nakanishi, Yoshio Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka,
Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, “SiON Gate Insulator Formation
using RLSA Plasma and Precise Measuremant of Nitrogen Profile in Advanced DRAM,”The 19th International Micro Electronics Conference Proceeding, pp.11-16, November
2007.

E1284 (W)Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Rui Hasebe, Weitao Cheng, Syunichi
Watabe, Ching Foa Tye, Shigetoshi Sugawa, and Tadahiro Ohmi, “Technologies for High
Performance CMISFETs,” The 19th International Micro Electronics Conference Proceeding,
pp.50-55, November 2007.

E1285 (W)

Tadahiro Ohmi, “FEOL Technology Perspective,” TEL FEOL Seminar ~Gate Stack
Enabler for More Moore~, pp.3-22, December 2007.

E1286 (C)A. Hiroe, M. Hirayama, Y. Shirai, A. Teramoto and T.Ohmi, “High Performance Bottom
Gate μc-Si TFT Fabricated by Low Damage, High Density Plasma Source,” Proceedingsof The 14th International Display Workshops Volume 2, pp.503-506, December 2007.

E1287 (P)Naoto Miyamoto, Masahiko Shimakage, Tatsuo Morimoto, Kazuya Kadota, Shigetoshi
Sugawa and Tadahiro Ohmi, “A Rapid Prototyping of Real-Time Pattern Generator for
Step-and-Scan Lithography Using Digital Micromirror Device,” International Conference
on Field-Programmable Technology, pp.305-308, Kitakyushu, December 2007.

E1288 (P)Masahiro Konda, Takahiro Nakayama, Naoto Miyamoto and Tadahiro Ohmi, “A Balanced
Vector-Quantization Processor Eliminating Redundant Calculation for Real- Time Motion
Picture Compression,” International Conference on Field-Programmable Technology,
pp.325-328, Kitakyushu, December 2007.

E1289 (B)A. Teramoto and T Ohmi, “High Current Drivability MOSFET Fabricated on Si (110)
Surface,” SPRINGER SERIES IN ADVANCED MICROELECTRONICS, Vol.27,
Advanced Gate Stacks for High-Mobility Semiconductors, pp.21-41, December 2007.