Prof. Ohmi's Paper

January－December, 1996
E610(C)

Tadashi Shibata, Tsutomu Nakai, Ning Mei Yu, Yuichiro Yamashita,
Masahiro Konda, and Tadahiro Ohmi, “Advances in Neuron-MOS
Applications,” Digest of Technical Papers, 1996 IEEE International
Solid-State Circuits Conference, pp. 304-305, 463, San Francisco, February
1996.

E611(C)

Tadashi SHIBATA, Masahiro KONDA, Yuichiro YAMASHITA, Tsutomu
NAKAI, and Tadahiro OHMI, “Neuron-MOS-Based Association Hardware
for Real-Time Event Recognition,” Proceedings of the Fifth International
Conference on Microelectronics for Neural Networks and Fuzzy Systems(MicroNeuro '96), pp. 94-101, Lausanne, Switzerland, February 1996.

E612(F)

Mikihiro KIMURA and Tadahiro OHMI, “Time-Dependent Dielectric
Degradation (TDDD) Influenced by Ultrathin Film Oxidation Process,” Jpn.
J. Appl. Phys., Vol. 35, Part. 1, No. 2B, pp. 1478-1483, February 1996.

E613(F)

Kazuyuki OHMI, Toshiyuki IWAMOTO, Tatuhiro YABUNE, Toshiki
MIYAKE, and Tadahiro OHMI, “Formation Process of Highly Reliable
Ultra-Thin Gate Oxide,” Jpn.J.Appl.Phys., Vol. 35, Part 1, No. 2B, pp.
1531-1534, February 1996.

E614(P)

Tadahiro Ohmi, “Total Room Temperature Wet Cleaning for Si Substrate
Surface,” 1996 Semiconductor Pure Water and Chemicals Conference,
Edited by Marjorie K. Balas, UPW & Chemical Proceedings, Santa Clara, pp.
157-177, Invited, March 1996.

E615(E)

Masayuki Kato, Masayuki Toda, Kazuki Kubo, Senri Ojima, Yo Sakata andTadahiro Ohmi, “The Effect of Sonication on Ultra Pure Water,” 1996
Semiconductor Pure Water and Chemicals Conference, Edited by Marjorie K.
Balas, UPW & Chemical Proceedings, Santa Clara, pp. 179-195, March
1996.

E616 (P)K. Kubo, S. Ojima, Y. Sakata, M. Kato, M. Toda, and T. Ohmi, “TheImpact of Radical Activated Ultra Pure Water,” 1996 Semiconductor Pure
Water and Chemicals Conference, Edited by Marjorie K. Balas, UPW &Chemical Proceedings, Santa Clara, pp. 196-214, March 1996.

E617(P)

Hiroshi Morita, Jong-Soo Kim, and Tadahiro Ohmi, “Cleaning of Noble
Metals on Silicon Wafer Surface by Ozonized Ultra Pure Water,” 1996
Semiconductor Pure Water and Chemicals Conference, Edited by Marjorie K.
Balas, UPW & Chemical Proceedings, Santa Clara, pp. 215-229, March
1996.

E618(P)Takanobu Kujime, Yasushi Nishiyama, and Tadahiro Ohmi, “The Cleaningof Particles from Si Wafer Surface by Fluorine Solution Excited by
Megasonic,” 1996 Semiconductor Pure Water and Chemicals Conference,
Edited by Marjorie K. Balas, UPW & Chemical Proceedings, Santa Clara, pp.
245-256, March 1996.

E619 (P)M. Itano, T. Kezuka, M. Kubo and T. Ohmi, “Particle Deposition andRemoval in Wet Cleaning Processes for Semiconductor Manufacturing,”
1996 Semiconductor Pure Water and Chemicals Conference, UPW &Chemical Proceedings, Santa Clara, pp. 257-287, March 1996.

E620(F)

Wataru Shindo and Tadahiro Ohmi, “Ion Energy, Ion Flux, and Ion Mass
Effects on Low-Temperature Silicon Epitaxy Using Low-Energy Ion
Bombardment Process,” J. Appl. Phys., Vol. 79, No. 5, pp.2347-2351, March
1996.

E621(F)

Tadahiro Ohmi, “FOREWORD Special Issue on Scientific ULSIManufacturing Technology,” IEICE Trans. Electron., Vol. E79-C, No. 3, pp.
255, March 1996.

E622(F)

Hitoshi INABA, Tadahiro OHMI, Takanori YOSHIDA, and Takao OKADA,“Neutralization of Static Electricity by Soft X-Ray and Vacuum Ultraviolet(UV)-Ray Irradiation,” IEICE Trans.Electron., Vol. E79-C, No. 3, pp.
328-336, March 1996.

E623(F)

Hitoshi MORINAGA,
Makoto SUYANA, Masashi NOSE, Steven
VERHAVERBEKE, and Tadahiro OHMI,“A Model for theElectrochemical Deposition and Removal of Metallic Impurities on Si
Surfaces,” IEICE Trans. Electron., Vol. E79-C, No. 3, pp. 343-362, March
1996.

E624(F)

Nobuhiro MIKI, Matagoro MAENO, Toshiro FUKUDOME, and Tadahiro
OHMI, “Advanced Fluorite Regeneration Technology to Recover Spent
Fluoride Chemicals Drained from Semiconductor Manufacturing Process,”
IEICE Trans. Electron., Vol. E79-C, No. 3, pp. 363-374, March 1996.

E625(F)

Yasuyuki SHIRAI, Masaki NARAZAKI, and Tadahiro OHMI, “Cr2O3
Passivated Gas Tubing System for Specialty Gases,” IEICE Trans. Electron.,Vol. E79-C, No. 3, pp. 385-391, March 1996.

E626(F)

Yasuhiko KASAMA, Tadahiro OHMI, Koichi FUKUDA, Hirobumi FUKUI,
Chisato IWASAKI, and Shoichi ONO, “Improvement of PECVD-SiNx for
TFT Gate Insulator by Controlling Ion Bombardment Energy,” IEICE Trans.
Electron., Vol. E79-C, No. 3, pp. 398-406, March 1996.

E627(F)

Koji KOTANI, Tadashi SHIBATA, and Tadahiro OHMI, “Impact ofHigh-Precision Processing on the Functional Enhancement of Neuron-MOS
Integrated Circuits,” IEICE Trans. Electron., Vol. E79-C, No. 3, pp. 407-414,
March 1996.

E628(F)

Hisayuki Shimada and Tadahiro Ohmi, “Current Drive Enhancement byUsing High-Permittivity Gate Insulator in SOI MOSFET's and Its
Limitation,” IEEE Trans. on Electron Devices, Vol.43, No. 3, pp. 431-435,
March 1996.

E629(P)MASASHI NOSE, MITSUSHI ITANO, and TADAHIRO OHMI, “Particle
Deposition Control for Various Wafer Surfaces in Acidic Solution with
Surfactant,” Particulate Science and Technology (Taylor & Francis),
Editor-in-Chief by Malay K. Mazumder, Vol. 14, No. 1, pp. 27-41,
January-March 1996.

E630(F)

Rochdi MESSOUSSI, Steven VERHAVERBEKE, Tatsuhiro YABUNE,
Masashi NOSE, and Tadahiro OHMI, “Improvement of Rinsing Efficiency
after Sulfuric Acid Hydrogen Peroxide Mixture (H2SO4/H2O2) by HF
Addition,” Jpn. J. Appl. Phys., Vol. 35, Part. 1, No. 4A, pp. 1989-1992, April
1996.

E631(F)

Yasuhiro MITSUI, Tadahiro OHMI and Atsushi OHKI and Shigeki
HAYASHI, “Quick External Leakage Inspection Method for Gas Supplying
System in Semiconductor Facility Using Atmospheric Pressure Ionization
Mass Spectrometer,” J. Mass Spectrom. Soc. Jpn., Vol. 44, No. 2, pp.
165-174, April 1996.

E632(C)

Yasushi Nishiyama, Takanobu Kujime, and Tadahiro Ohmi, “Mechanism ofParticle Contamination Removal by Megasonic,” 1996 Proceedings, 42nd
Annual Technical Meeting, Institute of Environmental Sciences, Orlando,
Florida, pp. 100-105, May 1996.

E633(C)

Hiroshi MORITA, Jong-Soo KIM, and Tadahiro OHMI, “Cleaning of Noble
Metals on Si Wafer by O3-UPW and EPM,” 1996 Proceedings, 42nd Annual
Technical Meeting, Institute of Environmental Sciences, Orlando, Florida, pp.
106-111, May 1996.

E634-1(C)Masayuki Toda, Tadahiro Ohmi, Takahisa Nitta, Yoshio Saito, Yoh-ichi
Kanno, Masaru Umeda, Michio Yagai, and Hajime Kidokoro, “N2 Tunnel
Wafer Transport System,” 1996 Proceedings, 42nd Annual Technical
Meeting, Institute of Environmental Sciences, Orlando, Florida, pp. 493-499,
May 1996.

E634-2(F)Masayuki Toda, Tadahiro Ohmi, Takahisa Nitta, Yoshio Saito, Yoh-ichi
Kanno, Masaru Umeda, Michio Yagai, and Hajime Kidokoro, “N2 Tunnel
Wafer Transport System,” Journal of the Institute of Environmental Sciences,Vol. XI, No.1, pp.23-28, January-February 1997.

E635(C)

Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi, “DC-Current-Free
Low-Power A/D Converter Circuitry Using Dynamic Latch Comparatorswith Divided-Capacitance Voltage Reference,” 1996 IEEE International
Symposium on Circuits and Systems (ISCAS 96), Vol. 4, Atlanta, pp.
205-208, May 1996.

E636(C)

Masahiro KONDA, Tadashi SHIBATA, and Tadahiro OHMI,“Neuron-MOS Correlator Based on Manhattan Distance Computation for
Event Recognition Hardware,” 1996 IEEE International Symposium on
Circuits and Systems (ISCAS 96), Vol. 4, Atlanta, pp. 217-220, May 1996.

E637(C)Yuichiro YAMASHITA, Tadashi SHIBATA, and Tadahiro OHMI,“Write/Verify Free Analog Non-Volatile Memory Using a Neuron-MOS
Comparator,” IEEE International Symposium on Circuits and Systems(ISCAS 96), Vol. 4, Atlanta, pp. 229-232, May 1996.

E638 (F)Kazuhide Ino, Iwao Natori, Akihiro Ichikawa, Raymond N. Vrtis, andTadahiro Ohmi, “Plasma Enhanced In Situ Chamber Cleaning Evaluated byExtracted-Plasma-Parameter Analysis,” IEEE Trans. on Semiconductor
Manufacturing, Vol. 9, No. 2, pp. 230-240, May 1996.

E639(P)

Tadahiro Ohmi, “Total Room Temperature Wet Cleaning of Silicon
Surface,” Proceedings of the 3rd Workshop on Semiconductor Wafer
Cleaning and Surface Characterization (RIST), Edited by K. Ryoo and S.
Kang, pp. 3-22, Invited, Korea, June 1996.

E640(C)

Tadahiro Ohmi, “Surface Contamination from Clean Room Air -Clean N2
Gas Ambient Wafer Transportation-,” INDOOR AIR '96 (The 7thInternational Conference on Indoor Air Quality and Climate), Vol. 1, pp.
51-60, Plenary, Nagoya, July 1996.

E641(C)

K. Nakano, K. Ino, A. Ichikawa, and T.Ohmi, “Hydrogen Damage Analysis
by TDS-APIMS after CF4/H2 Reactive Ion Etching,” Digest of Papers,
MicroProcess '96 (The 9th International MocroProcess Conference),
Kitakyushu, pp. 140-142, July 1996.

E642(M)

Tadahiro Ohmi, “Total Room Temperature Wet Cleaning of Silicon
Surfaces,” Semiconductor International, pp. 323-338, July 1996.

E643(F)

Tadahiro Ohmi, Yoshinori Nakagawa, Masakazu Nakamura, Atushi Ohki,
and Tomoyuki Koyama, “Formation of Chromium Oxide on 316L
Austenitic Stainless Steel,” Journal of Vacuum Science & Technology A, Vol.
14, No. 4, pp. 2505-2510, Jul/Aug 1996.

E644(P)

Tadashi SHIBATA, Tsutomu NAKAI, Tatsuo MORIMOTO, Ryu
KAIHARA, Takeo YAMASHITA, and Tadahiro OHMI, “Neuron-MOS
Temporal Winner Search Hardware for Fully-Parallel Data Processing,”
Advances in Neural Information Processing Systems 8, Proceedings of the
1995 Conference, Edited by David S. Touretzky, Michael C. Mozer, andMichael E. Hasselmo, pp. 685-691, 1996.

E645(F)

Akira Nakada, Mauricio Massazumi Oka, Yukio Tamai, Tadashi Shibata, andTadahiro Ohmi, “Influence of Substrate-Boron Concentration on the
Residual End-Of-Range Defects in 450˚C Annealed As+-Implanted
Junctions,” J. Appl. Phys., Vol. 80, No. 3, pp. 1594-1599, August 1996.

E646(C)

Katsuyuki SEKINE, Geun-Min CHOI, Mizuho MORITA, and Tadahiro
OHMI, “Native Oxide Growing Behavior on Si Crystal Structure andResistivity,” Extended Abstract, 1996 International Conference on Solid State
Devices and Materials, Yokohama, pp. 166-168, August 1996.

E647(C)

Takayuki JIZAIMARU, Senri OJIMA, Syunkichi OMAE, and Tadahiro
OHMI,“Contamination-Free
PhysicalResistStrippingbyMegasonic/IPA/Fluoride Enhanced Lift-Off Processing,” Extended Abstract,1996 International Conference on Solid State Devices and Materials,
Yokohama, pp. 242-244, August 1996.

E648(C)

Geun-Min CHOI, Katsuyuki SEKINE, Hiroshi MORITA, and Tadahiro
OHMI, “Metallic Impurity Growing Behavior on Surface Crystal Structure,”
Extended Abstract, 1996 International Conference on Solid State Devices andMaterials, Yokohama, pp. 371-373, August 1996.

E649(C)Akira NAKADA, Kei KANEMOTO, Mauricio Massazumi OKA, Yukio
TAMAI, and Tadahiro OHMI “Formation of Ultra-Shallow and
Low-Leakage p+n Junctions by Low-Temperature Post-Implantation
Annealing,” Extended Abstract, 1996 International Conference on Solid State
Devices and Materials, Yokohama, pp. 413-415, August 1996.

E650(C)

Tadahiro Ohmi, “Very Stable Gas Supply System Without Corrosion and
Catalytic Behavior,” SEMICON Taiwan 96, Gas Distribution System
Workshop, Taipei International Convention Center, Taiwan, pp.5-49,
Keynote Speech, September 1996.

E651(C)

Hiroshi MORITA, Geun-Min CHOI, Katsuyuki SEKINE, and Tadahiro
OHMI, “Study of Cu Particle Growth with Deposition Condition of
Amorphous Silicon,” Third International Symposium on Ultra Clean
Processing of Silicon Surfaces(UCPSS '96), Antwerp, Belgium, (2 pages),
September 1996.

E652(C)

Taiji Hashimoto, Yasuyuki Shirai, Masaki Narazaki, and Tadahiro Ohmi,“Fluoride Gas Distribution System,” Third International Symposium on Ultra
Clean Processing of Silicon Surfaces(UCPSS '96), Antwerp, Belgium, (2pages), September 1996.

E653(C)

R. Messoussi, S. Verhaverbeke, and T. Ohmi, “Rinsing Efficiency of a SPM
added HF Solution,” Third International Symposium on Ultra Clean
Processing of Silicon Surfaces(UCPSS '96), Antwerp, Belgium, (2 pages),
September 1996.

E654(C)

Masayuki Toda, Masayuki Kato, and Tadahiro Ohmi, “The Effect ofMegasonic Irradiation on Ultra Pure Water,” Third International Symposium
on Ultra Clean Processing of Silicon Surfaces(UCPSS '96), Antwerp,
Belgium, (2 pages), September 1996.

E655(C)T. Kujime, Y. Nishiyama, S. Okano, and T. Ohmi, “The Particle Cleaning for
FPMS with Megasonics Irradiation Combined with Spin Cleaning,” Third
International Symposium on Ultra Clean Processing of Silicon
Surfaces(UCPSS '96), Antwerp, Belgium, (2 pages), September 1996.

E656(C)H. Izumi, M. Miyashita, K. Yamane, H. Kikuyama, and T. Ohmi, “The
Optimization of Buffered Hydrogen Fluoride Composition to Control Wet
Process,” Third International Symposium on Ultra Clean Processing ofSilicon Surfaces(UCPSS '96), Antwerp, Belgium, (2 pages), September 1996.

E657 (F)

Herzl AHARONI, Tadahiro OHMI, Tadashi SHIBATA, Mauricio
Massazumi OKA, Akira NAKADA, and Yukio TAMAI, “A Comparative
Examination of Ion Implanted n+p Junctions Annealed at 1000 ℃ and
450℃,” Jpn. J. Appl. Phys., Vol. 35, Part 1, No. 9A, pp. 4606-4617,
September 1996.

E658(F)

TADAHIRO OHMI, “Total Room Temperature Wet Cleaning for Si
Substrate Surface,” Journal of Electrochemical Society, Vol. 143, No. 9, pp.
2957-2964, September 1996.

E659(C)Tadahiro Ohmi, Tadashi Shibata, and Koji Kotani, “Four-Terminal Device
Concept for Intelligent Soft Computing on Silicon Integrated Circuits,”
Methodologies for the Conception, Design, and Application of Intelligent
System, Proceedings of the 4th International Conference on Soft Computing(IIZUKA'96), Vol. 1, pp. 49-58, Plenary Lecture, Iizuka, September-October
1996.

E660(C)

Tadashi SHIBATA, Yuichiro YAMASHITA, Masahiro KONDA, Tatsuo
MORIMOTO, and Tadahiro OHMI, “Event Recognition Hardware Basedon Neuron-MOS Soft-Computing Circuits,” Methodologies for theConception, Design, and Application of Intelligent System, Proceedings ofthe 4th International Conference on Soft Computing (IIZUKA'96), Vol. 1, pp.
125-130, Iizuka, September-October 1996.

E661(C)

Tsutomu NAKAI, Tadashi SHIBATA, and Tadahiro OHMI, “Neuron MOS
Quasi-Two-Dimensional Image Processor for Real-Time Motion Vector
Detection,” Methodologies for the Conception, Design, and Application ofIntelligent System, Proceedings of the 4th International Conference on Soft
Computing (IIZUKA'96), Vol. 2, pp. 833-836, Iizuka, September-October
1996.

E662(C)

Ning Mei YU, Tadashi SHIBATA, and Tadahiro OHMI, “A Real-TimeCenter-Of-Mass Tracker Circuit Implemented by Neuron MOS Technology,”
Methodologies for the Conception, Design, and Application of Intelligent
System, Proceedings of the 4th International Conference on Soft Computing(IIZUKA'96), Vol. 2, pp. 837-840, Iizuka, September-October 1996.

E663(F)

Nobuhiro Konishi, Tadashi Shibata, and Tadahiro Ohmi, “Impurity Back
Diffusion through an Ultrahigh Vacuum Turbomolecular Pump under Large
Gas Throughput,” J. Vac. Sci, Technol. A, Vol. 14, No. 5, pp. 2958-2962,
September-October 1996.

E664(C)

Tadahiro Ohmi, “Ultra Clean Technology Contributing to the Fast Progressof Asian Semiconductor Industries”, The Fifth International Symposium on
Semiconductor Manufacturing, Proceedings of ISSM'96, pp. 377-388, Invited,Tokyo, October 1996.

E665(C)

Senri Ojima, Takayuki Jizaimaru, Shunkiti Omae, and Tadahiro Ohmi,“Room Temperature Photoresist Physical Stripper,” The Fifth International
Symposium on Semiconductor Manufacturing, Proceedings of ISSM'96, pp.
121-124, Tokyo, October 1996.

E666(C)

Yasuyuki Shirai, Taiji Hashimoto, Masaki Narazaki, Yoshinori Nakagawa,and Tadahiro Ohmi, “Fluorine Passivation Technology for Fluoride Gas
Distribution System,” The Fifth International Symposium on Semiconductor
Manufacturing, Proceedings of ISSM'96, pp. 333-336, Tokyo, October 1996.

E667(C)

Hiroshi Morita, Kazuhiko Kawada, Shouichi Okano, Takahisa Nitta, andTadahiro Ohmi, “Development of an Advanced Wet Cleaning Equipmentwith Megasonic Efficiency Enhancing System,” The Fifth International
Symposium on Semiconductor Manufacturing, Proceedings of ISSM'96, pp.
337-340, Tokyo, October 1996.

E668(C)

Tadahiro Ohmi, “Electromigration in Copper Interconnections,” Extended
Abstracts, 190th Electrochemical Society Meeting, San Antonio, Texas,
Abstract No. 264, pp. 346, October 1996.

E669(C)R. Messoussi, S. Verhaverbeke, and T. Ohmi, “Modified SPM Clean for
Reducing Sulfur Contamination,” Extended Abstracts, 190th Electrochemical
Society Meeting, San Antonio, Texas, Abstract No. 804, pp. 981-982,
October 1996.

E670(C)

Kazuhiko Kawada, Hiroshi Morita, Takahiro Hori, Noboru Kubota, andTadahiro Ohmi, “Reduction of Metallic Impurity in Ultrapure Water byUsing Anion Exchange and Chelating Membranes,” 190th Electrochemical
Society Meeting, San Antonio, Texas, Abstract No. 806, pp. 985-986,
October 1996.

E671(C)J. S. Kim, H. Morita, and Tadahiro Ohmi, “The Role of Metal Induced
Oxidation for Cu Deposition on Silicon Surface,” 190th Electrochemical
Society Meeting, San Antonio, Texas, Abstract No. 813, pp. 995-996,
October 1996.

E672(C)

Tadahiro Ohmi, “Contamination Identification and Control for Wet and Dry
Processes in the Semiconductor Manufacturing,” SEMICON Southwest 96,
Keynote Address, (32pages), October 1996.

E673(C)

M. Hirayama, T. Ohmi, T. Yamamoto, M. Ando, and N. Goto, “8.3 GHz
Microwave Plasma Excitation using a Radical Line Slot Antenna,” AVS 43rd
National Symposium, Philadelphia, pp. 134, October 1996.

E674(C)

K. Ino, T. Shinohara, T. Ushiki, and T. Ohmi, “Crystallographic andElectrical Properties of Sputter-deposited Ta Thin Films formed under
Various Ion Bombardment Conditions,” AVS 43rd National Symposium,
Philadelphia, pp. 189, October 1996.

E675(C)

G. S. Jong, S. W. Woo, W. S. Park, M. Takeya, Y. H. Jang, and T. Ohmi,“Low Temperature Polycrystalline Silicon Film Formation Technology by aHarmonization with Sputtering and Plasma CVD using a Low Kinetic Energy
Particle Process,” AVS 43rd National Symposium, Philadelphia, pp. 194,
October 1996.

E676(C)

Takeo USHIKI, Yuichi HIRANO, Hisayuki SHIMADA, and Tadahiro
OHMI, “High-Performance, Metal-Gate SOI CMOS Fabricated by Ultraclean,
Low-Temperature
Process
Technologies,”
Proceedings,
SPIE,
Microelectronic Device and Multilevel Interconnection Technology II, Vol.
2875, pp. 28-38, Austin, Texas, October 1996.

E677(C)

Toshiyuki Iwamoto, Toshiki Miyake, and Tadahiro Ohmi, “Influence ofCarbon Contamination on Ultra Thin Gate Oxide Reliability,” Proceedings,
SPIE, Microelectronic Device and Multilevel Interconnection Technology II,
Vol. 2875, pp. 207-215, Austin, Texas, October 1996.

E678(C)

Yasuyuki Shirai, Taiji Hashimoto, Yoshinori Nakagawa, and Tadahiro Ohmi,“Fluorine Passivation of Metal Surface,” Special Program, CLEANROOMS'96 WEST, The Conference on Advanced Microcontamination Control andUltrapure Manufacturing, pp. 68-77, Santa Clara, CA, October 1996.

E679-1(C)

Hiroshi Morita, Jong-Soo Kim, and Tadahiro Ohmi, “Adsorption and
Deposition Properties of Cu and Ag Contaminants on Si Substrate,” Abstracts,
Second International Symposium on Control of Semiconductor Interfaces, pp.
11, Karuizawa, Japan, October-November 1996.

E679-2 (F)Hiroshi Morita, Jong-Soo Kim, and Tadahiro Ohmi, “Adsorption anddesorption properties of Cu and Ag Contaminants on Si substrate”, Applied
Surface Science, Vol.117/118, pp99-102, June 1997.

E680-1(C)Toshiyuki Iwamoto and Tadahiro Ohmi, “Ultra Thin Gate Oxide Reliability
Enhanced by Carbon Contamination Free Process,” Abstracts, Second
International Symposium on Control of Semiconductor Interfaces, pp. 33,
Karuizawa, Japan, October-November 1996.

E680-2 (F)Toshiyuki Iwamoto and Tadahiro Ohmi, “Ultra thin gate oxide reliability
enhanced by carbon contamination free process”, Applied Surface Science,
Vol.117/118, pp.237-340, June 1997.

E681(C)

Mizuho Morita, Katsuyuki Sekine, and Tadahiro Ohmi, “Charging Control in
X-Ray Photoelectron Spectroscopy by Xe Lamp Light Irradiation to VeryThin SiO2/Si Interfaces,” Abstracts, Second International Symposium on
Control of Semiconductor Interfaces, pp. 67, Karuizawa, Japan,
October-November 1996.

E682(C)

Tadahiro Ohmi, “Surface Chemical Electronics at the Semiconductor
Surface,” International Symposium on Surface Nano-Control ofEnvironmental Catalysis and Related Materials, (6th Iketani Conference),
Plenary, pp. 142, Tokyo, Japan, November 1996.

E683(C)

Toshiyuki Iwamoto and Tadahiro Ohmi, “Highly-Reliable Ultra Thin Gate
Oxide Formation Technology,” Proceedings, the 2nd International
Symposium on Advanced Science and Technology of Silicon Materials, An
Industry-University Cooperative International Symposium of JSPS, pp.
396-401, Kona, Hawaii, November 1996.

E684 (F)Mikihiro Kimura and Tadahiro Ohmi, “Conduction Mechanism and Origin ofStree-Induced Leakage Current in Thin Silicon Dioxide Films,” J. Appl.
Phys., Vol. 80, No. 11, pp. 6360-6369, December 1996.

E685-1(C)Mauricio Massazumi Oka, Tadahiro Ohmi, Akira Nakada, Yukio Tamai, Kei
Kanemoto, and Tadashi Shibata, “Depth Profile of Point Defects in Ion
Implanted n+p and p+n Junctions Formed by 450 ℃ Post-Implantation
Annealing and Impact of Defects on Junction Characteristics,” Abstracts,
MRS 1996 Fall Meeting, Materials Research Society, pp. 180, Boston, MA,
December 1996.

E685-2 (P)M. Massazumi Oka, A. Nakada, Y. Tamai, K. Kanemoto, T. Shibata, and T.
Ohmi, “Depth Profile of Point Defects in Ion Implanted n+p and p+n
Junctions Formed by 450˚C Post-Implanting Annealing and Impact ofDefects on Junction Characteristics,” MRS Symposium Proceeding – Defects
in Electronic Materials II, Edited by J.Michel, T. Kennedy, K. Wada, K.
Thonke, Vol.442, Materials Research Society, pp. 163-168, Pittsburgh, PV,
June 1997.

E686-1(C)Toshiyuki Iwamoto, Tadahiro Ohmi, Jun Takano, and Koji Makihara,“Influence of Si Substrate Crystallinity on Device Performance,” Abstracts,
MRS 1996 Fall Meeting, Materials Research Society, pp. 182, Boston, MA,
December 1996.

E686-2 (P)T. Iwamoto, K. Makihara, J. Takano, and T. Ohmi, “Influence of Si Substrate
Crystallinity on Device Performance,” MRS Symposium Proceeding –Defects in Electronic Materials II, Edited by J.Michel, T. Kennedy, K. Wada,
K. Thonke, Vol.442, Materials Research Society, pp. 193-198, Pittsburgh, PV,
June 1997.

E687(C)

Takeo Ushiki, Mo Chium Yu, Yuichi Hirano, Hisayuki Shimada, Mizuho
Morita, and Tadahiro Ohmi, “Reliable Tantalum Gate Fully-Depleted-SOI
MOSFET's with 0.15μm Gate Length by Low-Temperature Processing below
500 ℃,”International Electron Devices Meeting 1996, pp. 117-120, San
Francisco, CA, December 1996.

E688(C)

Toshiyuki Iwamoto, Mizuho Morita, and Tadahiro Ohmi, “Highly-Reliable
Ultra Thin Gate Oxide Formation Process,” International Electron Devices
Meeting 1996, pp. 751-754, San Francisco, CA, December 1996.

E689 (F)

Tadashi Shibata and Tadahiro Ohmi, “Implementing Intelligence in Silicon
Integrated Circuits Using Neuron-Like High-Functionality Transistors,”
Journal of Robotics and Mechatronics, Vol. 8, No. 6, pp.508-515, 1996.