Prof. Ohmi's Paper
January－December, 1988
7(L)T. Ohmi, M. Morita, T. Kochi, M. Kosugi, H. Kumagai, and M. Itoh, “High-rate Growth at
Low Temperature by Free Jet Molecular Flow: Surface Reaction Film Formation
Technology,” Appl. Phys. Letters, Vol. 52, No. 12, pp. 1173-1175, April 1988.

8(C)T. Ohmi, H. Kumagai, M. Morita, M. Itoh, T.Kochi, M. Kosugi, and G. Tei, “SurfaceReaction Film Formation Utilizing Free Jet Molecular Flow,” Extended Abstracts, 173rd
Electrochemical Society Spring Meeting, Atlanta, Abstract No. 185, pp. 287-288, Vol. 88-1,
May 1988.

8-2(E)

T. Ohmi, H. Kumagai, M. Morita, M. Itoh, T.Kochi, M. Kosugi, and G. Tei, “SurfaceReaction Film Formation Utilizing Free Jet Molecular Flow,” Martin Scott, Toichi Akasaka
and Rafael Reif, eds., Advanced Materials for ULSI, PV88-19, pp. 36-43, The
Electrochemical Society, Pennington, NJ, 1988.

9(C)T Ohmi, S Yoshitake, J Murota, T Okumura, and H Aikawa, “High Quality Epitaxial Silicon
Layers Formed by Ultra Clean Technology,” Extended Abstracts, 173rd Electrochemical
Society Spring Meeting, Atlanta, Abstract No. 189, pp. 294-295, Vol. 88-1, May 1988.

9-2(E)

T. Ohmi, S. Yoshitake, J. Murota, T. Okumura, and H. Aikawa, “High Quality Epitaxial
Silicon Layers Formed by Ultra Clean Technology,” Martin Scott, Toichi Akasaka andRafael Reif, eds., Advanced Materials for ULSI, PV88-19, pp. 80-87, The Electrochemical
Society, Pennington, NJ, 1988.

10(C)J. Murota, N. Nakamura, M. Kato, N. Mikoshiba, and T. Ohmi, “Ultra-clean Low-pressure
CVD Technology with High Selectivity,” Extended Abstracts, 173rd Electrochemical
Society Spring Meeting, Atlanta, Abstract No. 192, pp. 299-300, Vol. 88-1, May 1988.

10-2(E)J. Murota, N. Nakamura, M. Kato, N. Mikoshiba, and T. Ohmi, “Ultraclean Low-pressure
CVD Technology with High Selectivity,” Martin Scott, Toichi Akasaka and Rafael Reif,eds., Advanced Materials for ULSI, PV. 88-19, pp. 103-112, The Electrochemical Society,
Pennington, NJ, 1988.

11(C)T. Ohmi, M. Morita, and T. Hattori,“Defects and Impurities in SiO2 Interface for Oxides
Prepared Using Superclean Methods,” Extended Abstracts, 173th Electrochemical Society
Spring Meeting, Atlanta, Abstract No. 256, pp. 387-388, May 1988.

11-2(E)

T. Ohmi, M. Morita, and T. Hattori, “Defects and Impurities in SiO2 Interface for Oxides
Prepared Using Superclean Methods,” C. Robert Helms and Bruce E. Deal, eds., The
Physics and Chemistry of SiO2 and the Si-SiO2 Interface, pp. 413-419, Plenum Publishing
Corporation, New York, 1988.

12(C)T Ohmi, T Saito, T Shibata, and T Nitta, “Copper ULSI Metallization by Low
Kinetic-energy Particle Process,” Digest of Technical Papers, 1988 Symposium on VLSITechnology, San Diego, pp. 99-100, May 1988.

13(L)T. Ohmi, T. Saito, T. Shibata, and T. Nitta, “Room Temperature Copper Metallization for
Ultralarge-scale Integrated Circuits by a Low Kinetic-energy Particle Process,” Appl. Phys.
Letters, Vol. 52, No. 26, pp. 2236-2238, June 1988.

14(C)Tadahiro Ohmi, and Tadashi Shibata, “Very-low-temperature Thin-film Formation
Technology by Low Kinetic Energy Particle Process,” 7th Int. Conf. on Ion Implantation
Technology, pp. 203, Kyoto, June 1988.

14-2(E)

Tadahiro Ohmi and Tadashi Shibata, “Very-low-temperature Thin-film Formation
Technology by a Low-kinetic-energy Particle Process,” T. Takagi, ed., Ion Implantation
Technology, pp. 794-798, North-Holland Physics Publishing, Amsterdam, 1988.

Prof. Ohmi’s Paper

15(C)T. Ohmi, T. Saito, T. Shibata and T. Nitta, “Room Temperature Copper ULSI Metallization
by Low Kinetic-energy Particle Process,” Proceedings 5th International IEEE VLSIMultilevel Interconnection Conference, Santa Clara, pp. 135-141, June 1988.

16(C)Tadahiro Ohmi, Shigeru Imai and T.Hashimoto, “VLSI Interconnects for Ultra High Speed
Signal Propagation,” Proceedings 5th International IEEE VLSI Multilevel Inter connection
Conference, Santa Clara, pp. 261-267, June 1988.

17(C)T. Ohmi, H. Kuwabara, T. Shibata, N. Kowata, and K. Sugiyama, “Low Kinetic-energy
Particle Process for Hillock-free Pure Aluminum Metallization,” Proceedings 5thInternational IEEE VLSI Multilevel Interconnection Conference, Santa Clara, pp. 446-452,
June 1988.

18(L)T. Ohmi, T. Ichikawa, T. Shibata, K. Matudo, and H. Iwabuchi, “In Situ Substrate-surface
Cleaning for Very Low Temperature Silicon Epitaxy by Low-kinetic-energy Particle
Bombardment,” Appl. Phys. Letters, Vol. 53, No. 1, pp. 45-47, July 1988.

19(L)T. Ohmi, K. Matudo, T. Shibata, T. Ichikawa, and H. Iwabuchi, “Low-temperature Silicon
Epitaxy by Low-energy Bias Sputtering,” Appl. Phys. Letters, Vol. 53, No. 5, pp. 364-366,
August 1988.

20(C)Tadahiro Ohmi, Kiyohiko Matudo, Tadashi Shibata, Takeshi Ichikawa, and Hiroshi
Iwabuchi, “Very-low-temperature Epitaxial Silicon Growth by Low-Kinetic-Energy Particle
Bombardment,” Extended Abstracts, 1988 International Conference on Solid State Devicesand Materials, Tokyo, pp. 49-52, August 1988.

21(C)Tadahiro Ohmi and Tadashi Shibata, “Personnel Training for Cleanrooms - Cleanliness
Management for a Ultra-high-grade Super Cleanroom”, Proceedings 9th International
Symposium on Contamination Control, Los Angeles, pp. 267-274, September 1988.

22(C)K. Sugiyama, F. Nakahara, T. Okumura, T. Ohmi, and J. Murota, “Detection of Sub ppb
Impurities in Gases Using Atmospheric Pressure Ionization Mass Spectrometry,”
Proceedings 9th International Symposium on Contamination Control, Los Angeles, pp.
332-340, September 1988.

23(C)Yoh-ichi Kanno and Tadahiro Ohmi, “Development of Contamination-Free GasComponents and Ultra Clean Gas Supply System for ULSI Manufacturing,” Proceedings 9thInternational Symposium on Contamination Control, Los Angeles, pp. 345-351, September
1988.

24(C)

Satoshi Mizogami, Yutaka Kunimoto, and Tadahiro Ohmi, “Ultra Clean Gas Transport fromManufacture to Users by Newly Developed Tank Lorries and Gas Storage Tanks,”
Proceedings 9th International Symposium on Contamination Control, Los Angeles, pp.
352-359, September 1988.

25(C)Hiroyuki Mishima, Tomiharu Yasui, Tetsuo Mizuniwa, Mitsuo Abe, and Tadahiro Ohmi,“High Purity Isopropanol and Its Application to Particle-free Wafer Drying,” Proceedings
9th International Symposium on Contamination Control, Los Angeles, pp. 446-456,
September 1988.

26(C)T. Ohmi, T. Okumura, K. Sugiyama, F. Nakahara, and J. Murota, “Outgas-freeCorrosion-resistant Surface Passivation of Stainless Steel for Advanced ULSI Processing
Equipment,” Extended Abstracts, 174th Electrochemical Society Fall Meeting, Chicago,
Abstract No. 396, pp. 579-580, October 1988.

26-2(E)

Tadahiro Ohmi, Takeshi Okumura, Kazuhiko Sugiyama, Fumio Nakahara, and Junichi
Murota, “Outgas-free Corrosion- resistant Surface Passivation of Stainless Steel for
Advanced ULSI Processing Equipment,” J. B. Anthony, ed., Automated Integrated Circuits
Manufacturing, PV89-2, pp. 99-106, The Electrochemical Society, Pennington, NJ, 1989.

27(C)T. Ohmi, G. S. Jong, M. Morita, M. Kosugi, and H. Kumagai, “A Novel CVD System with
Self-cleaning Function for the Automation of LSI Manufacturing,” Extended Abstracts,
174th Electrochemical Society Fall Meeting, Chicago, Abstract No. 398, pp. 582-583,
October 1988.
1

Prof. Ohmi’s Paper

27-2(E)

T. Ohmi, G.S.Jong, M. Morita, M. Kosugi, and H. Kumagai, “A Novel CVD System withSelf-cleaning Function for the Automation of LSI Manufacturing,” J. B. Anthony, ed.,Automated Integrated Circuits Manufacturing, PV89-2, pp. 120-129, The Electrochemical
Society, Pennington, NJ, 1989.

28(C)T. Ohmi, M. Onodera, G. Sato, T. Shibata, and M. Morita, “Ultra-high-vacuum Compatible
Wafer Transport and Holding System Using Electro-Static Chucks,” Extended Abstracts,
174th Electrochemical Society Fall Meeting, Chicago, Abstract No. 407, pp. 596-597,
October 1988.

28-2(E)

T. Ohmi, M. Onodera, G. Sato, T. Shibata, and M. Morita, “Ultra-high-vacuum Compatible
Wafer Transport and Holding System Using Electro-Static Chucks,” J.B.Anthony, ed.,Automated Integrated Circuits Manufacturing, PV89-2, pp. 235-243, The ElectrochemicalSociety, Pennington, NJ, 1989.

29(M)Tadahiro Ohmi, “Ultraclean Technology: ULSI Processing's
Microcontamination, Vol. 6, No. 10, pp. 49-58, October 1988.

30(C)Tadahiro Ohmi, “What's the Contamination Control Target in ULSI Manufacturing,”
Proceedings Microcontamination Conference and Exposition 88, Santa Clara, pp. 55-65,November 1988.

31(F)Tadahiro Ohmi, Kiyohiko Matudo, Tadashi Shibata, Takeshi Ichikawa, and Hiroshi
Iwabuchi, “Very-low temperature Epitaxial Silicon Growth by Low-kinetic-energy Particle
Bombardment,” Jpn. J. Appl. Phys., Vol. 27, No. 11, pp. L2146-L2148, November 1988.

32(M)Kazuhiko Sugiyama and Tadahiro Ohmi, “ULSI Fab Must Being with Ultraclean Nitrogen
System,” Microcontamination, Vol. 6, No. 11, pp. 49-54, November 1988.

33(C)N. Miki, H. Kikuyama, M. Maeno, Junichi Murota, and Tadahiro Ohmi, “Selective Etchingof Native Oxide by Dry Processing Using Ultra Clean Anhydrous Hydrogen Fluoride,”Technical Digest, 1988 International Electron Devices Meeting, San Francisco, pp. 730-733,December 1988.

34(M)Yoh-ichi Kanno and Tadahiro Ohmi, “Components Key to Developing Contamination Free
Gas Supply,” Microcontamination, Vol. 6, No. 12, pp. 23-30, December 1988.

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