Prof. Ohmi's Paper
January－December, 2013
E1583 (F)Tomoyuki Suwa, Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Xiang Li, YukihisaNakao, Masashi Yamamoto, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita,
Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori, “Chemical Structure of Interfacial
Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature,
Annealing in Forming Gas, and Difference in Oxidizing Species,” Japanese Journal ofApplied Physics, Vol.52, 031302, February 2013.

E1583-2 (C)諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆
桂之、木下豊彦、須川成利、大見忠弘、服部健雄、「Chemical Structure of Interfacial
Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature,
Annealing in Forming Gas, and Difference in Oxidizing Species」、第 75 回応用物理学会秋季学術講演会（公益社団法人応用物理学会）、応用物理学会優秀論文賞受賞記念講演、
19a-17-6、2014 年 9 月。

E1584(F)

Hiroshi Kambayashi, Takehiko Nomura, Hirokazu Ueda, Katsushige Harada, Yuichiro
Morozumi, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi,“High Quality SiO2/Al2O3 Gate Stack for GaN Metal–Oxide–Semiconductor Field-EffectTransistor,” Japanese Journal of Applied Physics, Vol.52, 04CF09, March 2013.

E1585(C)

Hiroshi Kambayashi, Takehoko Nomura, Hirokazu Ueda, Katsushige Harada, Yuichiro
Morozumi, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi,“High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET,” Abstracts, 2013
MRS (Materials Research Society) Spring Meeting and Exhibit, CC2.08, San Francisco,April 2013.

E1586(C)A. Yonezawa, A. Teramoto, T. Obara, R. Kuroda, S. Sugawa and T. Ohmi, “The Study ofTime Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region,”
IEEE International Reliability Physics Symposium 2013, XT.11.1, Monterey, April 2013.

E1587(C)Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa,and Tadahiro Ohmi, “Demonstrating Distribution of SILC Values at Individual Leakage
Spots,” IEEE International Reliability Physics Symposium 2013, GD.5.1, Monterey, April
2013.

E1588-1(C)H. Tanaka, A. Teramoto, T. Motoya, S. Sugawa, T. Ohmi, “Effect of composition rate onerbium silicide work function on different silicon surface orientation,” 223rd Meeting of The
Electrochemical Society, Abs.773, Toronto, May 2013.

E1588-2 (P)Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro
Ohmi, “Effect of Composition Rate on Erbium Silicide Work Function on Different Silicon
Surface Orientation”, ECS Transactions, Vol.53, No.1, Graphene, Ge/III-V, and Emerging
Materials for Post CMOS Applications 5, pp.343-350, May 2013.

E1589-1(C)Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru
Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa and Tadahiro Ohmi,“XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma
treatments,” The 40th International Symposium on Compound Semiconductors (ISCS2013),
MoPC-06-21, Poster, Kobe, May 2013.

E1589-2（P）

Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Isao Makabe, Ken Nakata, Tsukuru
Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa and Tadahiro Ohmi,“XPS analysis of the terminated-bonding states at GaN surface after chemical and plasma
treatments,” the physica status solidi (c) journal. 1-4(2013), October 2013.

Prof. Ohmi’s Paper

E1590(C)Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi, “Electrical Properties of Amorphous
InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering with Using Kr and Xe
Instead of Ar,” Society for Information Display, SID International Symposium, Seminar,and Exhibition, DisplayWeek 2013, 52.4, pp.727-730, Distinguished Paper, Vancouver,May 2013.

E1591（F）

Tetsuya Goto, Shigetoshi Sugawa, and Tadahiro Ohmi, “Impact of the Use of Xe onElectrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film
Transistors,” Japanese Journal of Applied Physics, Vol.52, No. 5, Issue 1 of 4, 050203, May
2013.

E1592（C）

Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi, “High-Speed and Highly Accurate
Evaluation of Electrical Characteristics in MOSFETs,” Proceedings of International
Conference on IC Design and Technology 2013, pp.187-190, Invited Paper, Pavia, Italy,
May 2013.

E1593（F）

Tadashi Watanabe, Akinobu Teramoto, Yukihisa Nakao, Shigetoshi Sugawa, and Tadahiro
Ohmi, “Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN
Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical
Vapor Deposition,” IEEE Transactions on Electron Devices, Vol. 60, No. 6, June 2013.

E1594-1(C)A. Teramoto, H.W. Park, T. Inatsuka, R. Kuroda, S. Sugawa, T. Ohmi, “Stress induced
leakage current generated by hot-hole injection,” 18th Conference of “Insulating Films onSemiconductors” (infos2013) Book of Abstracts, pp.156-157, June 2013.

E1594-2 (F)Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa,Tadahiro Ohmi, “Stress induced leakage current generated by hot-hole injection,”
Microelectronic Engineering, Vol. 109, pp. 298-301, March 2013.

E1595-1(C)T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori,“Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer andOxidation-Induced Residual Stress in Si(100) Substrate Near the Interface,” 18th Conferenceof “Insulating Films on Semiconductors” (infos2013) Book of Abstracts, pp.140-141, June2013.

E1595-2 (F)Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira,Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo
Hattori, “Angle-resolved photoelectron spectroscopy study on interfacial transition layer andoxidation-induced residual stress in Si(100) substrate near the interface,” MicroelectronicEngineering, Vol. 109, pp. 197-199, April 2013.

E1596-1(C)P. Gaubert, A. Teramoto, S. Sugawa, and T. Ohmi, “1/f noise of accumulation mode p- andn-MOSFETs,” Booklet of Abstracts 22nd International Conference on Noise andFluctuations (ICNF2013), pp.40, Montpellier, June 2013.

E1596-2(P)Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “1/f noise ofaccumulation mode p- and n-MOSFETs,” 22nd International Conference on Noise andFluctuations (ICNF2013), Mo-B, USB, Montpellier, June 2013.

E1597(C)H. W. Park, A. Teramoto, T. Inatsuka, R. Kuroda, S. Sugawa, and T. Ohmi, “Impact ofInjected Carrier Types to Stress Induced Leakage Current Using Substrate Hot Carrier
Injection Stress,” 2013 Asia-Pacific Workshop on Fundamentals and Application ofAdvanced Semiconductor Devices (AWAD 2013), pp. 75-78, Seoul, June 2013.

E1598(C)

Dae-Hee Han, Huiseong Han, Shun-ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, andTadahiro Ohmi, “Si surface roughness influence on nMOSFET characteristics with ultrathin
HfON gate insulator formed by ECR plasma sputtering,” 2013 Asia-Pacific Workshop on
Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2013), pp.
241-244, Seoul, June 2013.

E1599(C)Tetsuya Goto, Hidekazu Ishii, Shigetoshi Sugawa and Tadahiro Ohmi, “Impact of the Use ofXe and Its Recycling System for Preparing Amorphous InGaZnO Thin Film Transistors by
Dual-Target Rotation Magnet Sputtering,” The Twelfth International Symposium on
Sputtering & Plasma Processes (ISSP 2013), pp.22-25, Kyoto, July 2013.

Prof. Ohmi’s Paper

E1600(F)

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa,
Shigetoshi Sugawa, and Tadahiro Ohmi, “A Test Circuit for Extremely Low Gate Leakage
Current Measurement of 10 aA for 80 000 MOSFETs in 80 s,” IEEE Transactions on
Semiconductor Manufacturing, Vol. 26, No. 3, pp.288-295, August 2013.

E1601(C)Yukihiro Tsuji, Tsukuru Katsuyama, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Wet cleaning process for GaN Surface at room temperature,”
Extended Abstracts of the 2013 International Conference on Solid State Devices andMaterials, PS-6-11, pp.162-163, Fukuoka, September 2013.

E1602(C)T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro,
T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi, “Detection of oxidation-induced compressive
stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution,”
Extended Abstracts of the 2013 International Conference on Solid State Devices andMaterials, B-4-1, pp.610-611, Fukuoka, September 2013.

E1603(C)Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi,“Carrier Mobility on (100), (110), and (551) Oriented Atomically Flattened Si Surfaces forMulti-gate MOSFETs Device Design,” Extended Abstracts of the 2013 International
Conference on Solid State Devices and Materials, D-1-5, pp.702-703, Fukuoka, September
2013.

E1604(C)T. Obara, A. Yonezawa, A. Teramoto, R. Kuroda, S. Sugawa, T. Ohmi, “Extraction of Time
Constants Ratio over Nine Orders of Magnitude for Understanding Random TelegraphNoise in MOSFETs,” Extended Abstracts of the 2013 International Conference on Solid
State Devices and Materials, D-4-1, pp.722-723, Fukuoka, September 2013.

E1605-1(C)H. Tanaka, A. Teramoto, S. Sugawa, T. Ohmi, “Schottky barrier height between erbium
silicide and various morphology of Si(100) surface changed by alkaline etching,” 224thMeeting of The Electrochemical Society, Abs.2170, San Francisco, October 2013.

E1605-2 (P)Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “SchottkyBarrier Height Between Erbium Silicide and Various Morphology of Si(100) Surface
Changed by Alkaline Etching,” ECS Transactions, Vol.58, No.7, Semiconductors,Dielectrics, and Metals for Nanoelectronics 11, pp.349-354, October 2013.

E1606-1(C)M. Yamaji, T. Tanikawa, T. Yakushijin, T. Funakoshi, S. Yamashita, A. Hidaka, M. Nagase,
N. Ikeda, S. Sugawa, and T. Ohmi, “Diaphragm Durability Enhancement for Valves
Supplying Gas for Atomic Layer Deposition,” 224th Meeting of The ElectrochemicalSociety, Abs.1862, San Francisco, October 2013.

E1606-2 (P)M. Yamaji, T. Tanikawa, T. Yakushijin, T. Funakoshi, S. Yamashita, A. Hidaka, M. Nagase,
N. Ikeda, S. Sugawa, and T. Ohmi, “Diaphragm Durability Enhancement for Valves
Supplying Gas for Atomic Layer Deposition”, ECS Transactions, Vol.58, No.10, AtomicLayer Deposition Applications 9, pp.41-48, October 2013.

E1607-1(C)H. Kambayshi, N. Ikeda, T. Nomura, H. Ueda, Y. Morozumi, K. Harada, K. Hasebe, A.
Teramoto, S. Sugawa, and T. Ohmi, “High Performance Normally-Off GaN Mosfets On SiSubstrates,” 224th Meeting of The Electrochemical Society, Abs.1911, San Francisco,
October 2013.

E1607-2 (P)Hiroshi Kambayashi, Nariaki Ikeda, Takehiko Nomura, Hirokazu Ueda, Y. Morozumi,
Katsushige Harada, Kazuhide Hasebe, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro
Ohmi, “High Performance Normally-off GaN MOSFETs on Si Substrates,” ECS
Transactions, Vol.58, No.4, Gallium Nitride and Silicon Carbide Power Technologies 3,pp.155-166, October 2013.

E1608 (W)Yukihiro Tsuji, Tadashi Watanabe, Kenichi Nakamura, Kenji Nagao, Tsukuru Katsuyama,
Yukihisa Nakao, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro
Ohmi, “Development of Ultraclean Surface Processing for Gallium Nitride,” The 25th
International Micro Electronics Conference Proceeding, pp.39-46, November 2013.

Prof. Ohmi’s Paper

E1609(C)H. Nohira, T. Suwa, K. Nagata, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro,T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi, “Detection of Oxidation-Induced Compressive
Stress in Si(100) Substrate Near the SiO2/Si Interface by X-Ray Photoelectron
Spectroscopy”, Extend Abstracts of 2013 International Workshop on Dielectric Thin Films
For Future Electron Devices: Science and Technology (IWDTF), pp.111-112, November
2013.

E1610 (F)

Tetsuya Goto, Hidekazu Ishii, Shigetoshi Sugawa, and Tadahiro Ohmi, “Low-cost Xe
sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering
incorporating a Xe recycle-and-supply system,” Journal of Vacuum Science & Technology
A 32(2) Mar/Apr 2014, 02B105, December 2013.

E1611(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Face Recognition Combined VQ
Histogram and Energy Histogram in DCT Domain”, Proceeding of 2013 International
Conference on Electrical Engineering and Computer Sciences (EECS 2013), pp. 426-432,Hongkong, December 2013.