Prof. Ohmi's Paper
January－December, 1990
105(M)Tadahiro Ohmi, Yasuhiko Kasama, Hitoshi Inaba, Toshihito Takenami, and Souji Fukuda,“Developing a Central Monitoring System for the ULSI Environment,” Microcontamination,
Vol. 8, No. 1, pp. 39-41, 62-66, January 1990.

106(F)

Nobuhiro Miki, Hirohisa Kikuyama, Ichiroh Kawanabe, Masayuki Miyashita, and Tadahiro
Ohmi, “Gas-Phase Selective Etching of Native Oxide,” IEEE Transactions on ElectronDevices, Vol. 37, No. 1, pp. 107-115, January 1990.

107(F)

Nobuhiro Miki, M. Maeno, K. Maruhashi, Y. Nakagawa, and Tadahiro Ohmi, “FluorinePassivation of Metal Surface for Self-Cleaning Semiconductor Equipment,” IEEE
Transactions on Semiconductor Manufacturing, Vol. 3, No. 1, pp. 1-11, February 1990.

108(M)Tadahiro Ohmi, Yasuhiko Kasama, Kazuhiko Sugiyama, Yasumitsu Mizuguchi, Yasuyuki
Yagi, Hitoshi Inaba, and Michiya Kawakami, “Controlling Wafer Surface Contamination inAir Conditioning, Particle Removal Subsystems,” Microcontamination, Vol. 8, No. 2, pp.
45-47, 68-72, February 1990.

109(C)

T. Ohmi, M. Miyawaki and T.Shibata, “High-Performance Devices and Functional
Intelligent Devices in Deep-Submicron Era,” Extended Abstracts of the 8th International
Workshop on FUTURE ELECTRON DEVICES, Tosa, pp. 137-142, March 1990.

110(M)Tadahiro Ohmi, Yasuhiko Kasama, Kazuhiko Sugiyama, Yasumitsu Mizuguchi, Yasuyuki
Yagi, Hitoshi Inaba, and Michiya Kawakami,“Examining Performance ofUltra-High-Purity Gas, Water, and Chemical Delivery Subsystems,” Microcontamination,
Vol. 8. No. 3, pp. 27-33, 60-63, March 1990.

111(F)

Nobuhiro Miki, Matagoro Maeno, Kazuo Maruhashi, and Tadahiro Ohmi, “Vapor-LiquidEquilibrium of the Binary System HF-H2O Extending to Extremely Anhydrous Hydrogen
Fluoride,” Journal of the Electrochemical Society, Vol. 137, No. 3, pp. 787-790, March1990.

112(F)

Nobuhiro Miki, Matagoro Maeno, and Tadahiro Ohmi, “Conductivity and Dissociation
Equilibrium of Extremely Anhydrous Hydrogen Fluoride,” Journal of the Electrochemical
Society, Vol. 137, No. 3, pp. 790-794, March 1990.

113(F)Tadahiro Ohmi, Hideshi Kuwabara, Satoru Saitoh, and Tadashi Shibata, “Formation ofHigh Quality Pure Aluminum Films by Low Kinetic Energy Particle Bombardment,”
Journal of the Electrochemical Society, Vol. 137, No. 3, pp. 1008-1016, March 1990.

114(C)Tadahiro Ohmi, Shigeru Imai and Takashi Hashimoto, “Device and Interconnect Structures
Suitable for Ultrahigh-Speed LSIs,” Electronics and Communications in Japan, Vol. 73, No.
3, pp. 74-80, March 1990.

115(L)

Takashi Matsuura, Hiroaki Uetake, Tadahiro Ohmi, Junichi Murota, Koichi Fukuda, Nobuo
Mikoshiba, Tadashi Kawashima, and Yoshihito Yamashita, “Directional Etching of Si with
Perfect Selectivity to SiO2 Using an Ultraclean Electron Cyclotron Resonance Plasma,”Appl. Phys. Lett., Vol. 56, No. 14, pp. 1339-1341, April 1990.

116(C)Tadahiro Ohmi, “Impact of Ultra Clean Wafer Processings on Power Devices,”
Proceedings, The 2nd International Symposium on Power Semiconductor Devices &Ics(ISPSD’90), Tokyo, pp. 157-162, April 1990.

117(F)

Nobuyoshi Tanaka, Seiji Hashimoto, Mahito Shinohara, Shigetoshi Sugawa, Masakazu
Morishita, Shigeyuki Matsumoto, Yoshio Nakamura, and Tadahiro Ohmi, “A 310K Pixel
Bipolar Imager (BASIS),” IEEE Transactions on Electron Devices, Vol. 37, No. 4, pp.
964-971, April 1990.

Prof. Ohmi’s Paper

118(C)

Hirohisa Kikuyama, Nobuhiro Miki, and Tadahiro Ohmi, “Wettability-Controlled Buffered
HF for ULSI Processing,” 1990 Proceedings, 36th Annual Technical Meeting “A Glimpse
into the 21st Century”, New Orleans, pp. 332-339, April 1990.

119(C)

Y. Kasama, Y. Yagi, T. Imaoka, M. Kawakami, and T. Ohmi, “Advanced D.I. Water
System with Low Dissolved Oxygen for ULSI Processing,” 1990 Proceedings, 36th Annual
Technical Meeting “A Glimpse into the 21st Century”, New Orleans, pp. 344-349, April1990.

120(M)Tadahiro Ohmi, “Letters,” Microcontamination, Vol. 8, No. 5, pp. 10, 106-110, May 1990.

121(C)Tadahiro Ohmi, “Ultra Clean Technology for Advanced Semiconductor Technology,”
Proceedings of The VLSI Workshop on New Process Technologies for ULSI, Honolulu, pp.
101-117, June 1990.

122(C)

T. Shibata, A. Okita, Y. Kato, T. Ohmi, and T. Nitta, “Formation of Ultra-Shallow
Low-Reverse Current n+p Junctions by 450 C Furnace Annealing,” 1990 Symposium onVLSI Technology, Honolulu, pp. 63-64, June 1990.

123(C)Tadahiro Ohmi and Tadashi Shibata, “Requirements of CAM in IC Technology,” Summer
Course on Manufacturing Science, Leuven, June 1990.

124(C)Tadahiro Ohmi, “Ultra Clean Processing,” Summer Course on Manufacturing Science,Leuven, June 1990.

125(C)Tadahiro Ohmi, “Basic Development Item on Small Geometry Via Hole Filling,” TechnicalProceedings, SEMICON/KANSAI- KYOTO 1990, Kyoto, pp. 169-178, June 1990.

126(C)

M. Morita, T. Ohmi, E. Hasegawa, A. Teramoto, and Susumu Kawajiri, “Particle Generationfrom Gate Valves and its Behavior,” American Association for Aerosol Research,
Philadelphia, pp. 40, June 1990.

127(F)

T. Ohmi, “For the Start of Institute of Basic Semiconductor Technology Development,”
Ultra Clean Technology, Vol. 1, No. 1, pp. 1-2, 1990.

128(F)

K. Sugiyama, M. Nakamura, A. Ohkura, Y. Mizuguchi, and T. Ohmi, “Calibration ofAPIMS and Application for Process Evaluation,” Ultra Clean Technology, Vol. 1, No. 1, pp.
23-33, 1990.

129(M)Tadahiro Ohmi, “Closed System Essential for High-Quality Processing in Advanced
Semiconductor Lines,” Microcontamination, Vol. 8, No. 6, pp. 27-32, 106-107, June 1990.

130(F)

T. Nitta, T. Ohmi, Y. Ishihara, A. Okita, T. Shibata, J. Sugiura, and N. Ohwada,“Reverse-bias Current Reduction in Low-temperature-annealed Silicon pn Junctions byUltraclean Ion-implantation Technology,” Journal of Applied Physics, Vol. 67, No. 12, pp.
7404-7412, June 1990.

131(C)Tadahiro Ohmi, Yoshio Ishihara, Tadashi Shibata, and Akira Okita, “Low-Temperature
Annealing of Heavily Ion-Implanted Layer,” Electronics and Communications in Japan, Vol.
73, No. 6, pp. 86-91, June 1990.

132(C)

M. Miyawaki, S. Yoshitake, T. Sato, S. Saito, and T. Ohmi, “Improvement of Device
Characteristics in Native Oxide Free Processing,” Digest of Papers, 1990 3rd MicroProcess
Conference, Chiba, pp. 142-143, July 1990.

133(M)Tadahiro Ohmi and Tadashi Shibata, “Developing a Fully Automated, Closed Wafer
Manufacturing System,” Microcontamination, Vol. 8, No. 7, pp. 25-32, 84-85, July 1990.

134(F)

M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, “Growth of Native
Oxide on a Silicon Surface,” Journal of Applied Physics, Vol. 68, No. 3 pp. 1272-1281,
August 1990.

135(L)

Hiroaki Uetake, Takashi Matsuura, Tadahiro Ohmi, Junichi Murota, Koichi Fukuda, andNobuo Mikoshiba,“Anisotropic Etching of n+ Polycrystalline Silicon with High Selectivity
Using a Chlorine and Nitrogen Plasma in an Ultraclean Electron Cyclotron Resonance
Etcher,” Applied Physics Letters, Vol. 57, No. 6, pp. 596-598, August 1990.
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Prof. Ohmi’s Paper

136(C)

Takashi Matsuura, Hiroaki Uetake, Junichi Murota, Koichi Fukuda, Tadahiro Ohmi, andNobuo Mikoshiba, “n+-Polysilicon Etching with Both High Anisotropy and High Selectivity
by Nitrogen Chemisorption in Chlorine and Nitrogen Mixed ECR Plasma,” ExtendedAbstracts, the 22nd (1990 International) Conference on Solid State Devices and Materials,Part I, Sendai, pp. 199-202, August 1990.

137(C)

T. Abe, A. Uchiyama, K. Yoshizawa, Y. Nakazato, M. Miyawaki, and Tadahiro Ohmi,“Encapsulation of Surface Impurities by Silicon Wafer-Bonding,” Extended Abstracts, the22nd (1990 International) Conference on Solid State Devices and Materials, Part I, Sendai,
pp. 223-226, August 1990.

138(F)

Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi, “Hot-Carrier-Immunity Degradation inMOSFETs Caused by Ion-Bombardment Processes,” Extended Abstracts, the 22nd (1990International) Conference on Solid State Devices and Materials, Part I, Sendai, pp. 311-314,
August 1990.

139(C)

Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa, and Akinobu Teramoto, “Native Oxide
Growth on Silicon Surface in Wet Ambient,” Extended Abstracts, the 22nd (1990International) Conference on Solid State Devices and Materials, Part II, Sendai, pp.
1063-1066, August 1990.

140(C)

N. Yabumoto, K. Saito, Mizuho Morita, and Tadahiro Ohmi, “The Role of Hydrogen,
Oxygen and Water in Oxidation of Hydrogen Terminated Silicon Surface,” ExtendedAbstracts, the 22nd (1990 International) Conference on Solid State Devices and Materials,Part II, Sendai, pp. 1067-1070, August 1990.

141(C)

Nobuhiro Miki, Ichiroh Kawanabe, and Tadahiro Ohmi, “Progressive Technology ofFluoride Chemicals for ULSI Manufacturing,” Extended Abstracts, the 22nd (1990International) Conference on Solid State Devices and Materials, Part II, Sendai, pp.
1095-1098, August 1990.

142(C)

Yasuhiko Kasama, Yasuyuki Yagi, Takashi Imaoka, and Tadahiro Ohmi, “Low DissolvedOxygen Ultrapure Water Systems for Native Oxide Free Wafer Processing,” ExtendedAbstracts, the 22nd (1990 International) Conference on Solid State Devices and Materials,
Part II, Sendai, pp. 1139-1142, August 1990.

143(C)

Haruhiro Goto, Makoto Sasaki, Tadahiro Ohmi, Tadashi Shibata, Atsushi Yamagami,
Nobuyuki Okamura, and Osamu Kamiya, “Advanced Plasma Processing Equipment without
Wafer Surface Damage and Chamber Material Contamination,” Extended Abstracts, the22nd (1990 International) Conference on Solid State Devices and Materials, Part II, Sendai,
pp. 1147-1150, August 1990.

144(F)

Hirohisa Kikuyama, Nobuhiro Miki, Kiyonori Saka, Jun Takano, Ichiro Kawanabe,
Masayuki Miyashita, and Tadahiro Ohmi, “Surface Active Buffered Hydrogen Fluoride
Having Excellent Wettability for ULSI Processing,” IEEE Transactions on Semiconductor
Manufacturing, Vol. 3, No. 3, pp. 99-108, August 1990.

145(F)

Kazuhiko Sugiyama, Tadahiro Ohmi, Mizuho Morita, Yoshiyuki Nakahara, and Nobuhiro
Miki, “Low Outgassing and Anticorrosive Metal Surface Treatment for Ultrahigh Vacuum
Equipment,” Journal of Vacuum Science & Technology A, Vol. 8, No. 4, pp. 3337-3340,
July/August 1990.

146(C)Tadahiro Ohmi, “Ultra High Speed LSI,” Advance Program and Abstract, The SecondSendai International Conference, YAGI Symposium on Advanced Technology Bridging theGap between Light and Microwaves, Sendai, pp. 52-53, September 1990.

146-2(E)

Tadahiro Ohmi, “Ultra High Speed LSI,” Proceeding of, The Second Sendai InternationalConference, YAGI Symposium on Advanced Technology Bridging the Gap between Lightand Microwaves, Sendai, pp. 147-148, September 1990.

147(F)

Yasuyuki Yagi, Michiya Kawakami, Takashi Imaoka, and Tadahiro Ohmi, “AdvancedUltrapure Water Systems for ULSI Processing - A Performance of MSCR Ultrapure WaterSystem in Tohoku Univ.,” Ultra Clean Technology, Vol. 1, No. 2, pp. 67-74, 1990.
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Prof. Ohmi’s Paper

148(F)

Yasuyuki Yagi, Michiya Kawakami, Kenichi Sato, and Tadahiro Ohmi, “Spray Cleaning
Technology Using High Temp and High Pressure Ultrapure Water,” Ultra Clean Technology,
Vol. 1, No. 2, pp. 75-85, 1990.

149(C)Tadahiro Ohmi and Tadashi Shibata, “Microcontamination- Advanced Manufacturing
Process Technologies,” W. Eccleston and P. J. Rosser, eds., Essderc 90, 20th European Solid
State Device Research Conference, Nottingham, 10-13 September 1990, pp. 625-632,(Adam Hilger, Bristol, 1990.)

150(C)Tadahiro Ohmi, “Total Contamination Control for Semiconductor Manufacturing,” 10thInternational Symposium on Contamination Control, Zurich, pp. 15-25, September 1990.

151(C)Tadahiro Ohmi and Tadashi Shibata, “Advanced Semiconductor Manufacturing Technology
Based on Closed Manufacturing System,” 10th International Symposium on Contamination
Control, Zurich, pp. 128-135, September 1990.

152(C)

T. Ohmi and T. Shibata, “Closed Manufacturing System for Advanced Semiconductor
Manufacturing,” Extended Abstracts, 178th Electrochemical Society Meeting, Seattle,Abstract No. 408, pp. 593-594, October 1990.

152-2(E)

T. Ohmi and T. Shibata, “Closed Manufacturing System for Advanced Semiconductor
Manufacturing,” Vaughn E. Akins and Hiroyuki Harada, eds., Automated Integrated Circuits
Manufacturing, PV91-5, pp. 3-64, The Electrochemical Society, Pennington, NJ, 1991.

153(C)

N. Miki, H. Kikuyama, K. Saka, J. Takano, I. Kawanabe, M. Miyashita, and T. Ohmi,“Optimization of Wet Processing with Advanced Surface Active BHF for ULSIManufacturing,” Extended Abstracts, 178th Electrochemical Society Meeting, Seattle,
Abstract No. 414, pp. 602-603, October 1990.

153-2(E)

N. Miki, H. Kikuyama, K. Saka, J. Takano, I. Kawanabe, M. Miyashita, and T.
Ohmi,“Optimization of Wet Processing with Advanced Surface Active BHF for ULSIManufacturing,” Vaughn E. Akins and Hiroyuki Harada, eds., Automated Integrated Circuits
Manufacturing, PV91-5, pp. 133-154, The Electrochemical Society, Pennington, NJ, 1991.

154(C)

H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya,“Advanced Plasma Processing Equipment without Wafer Surface Damage and Chamber
Material Contamination,” Extended Abstracts, 178th Electrochemical Society Meeting,Seattle, Abstract No. 416, pp. 606-607, October 1990.

154-2(E)

H. Goto, M. Sasaki, H.-D. Lowe, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O.
Kamiya, “Development of Dual Excitation Plasma Equipment(DEPE) to Minimize Wafer
Surface Damage and Chamber Material Contamination,” Vaughn E. Akins and Hiroyuki
Harada, eds., Automated Integrated Circuits Manufacturing, PV91-5, pp. 167-178, The
Electrochemical Society, Pennington, NJ, 1991.

155(C)

M. Maeno, Nobuhiro Miki, K. Maruhashi, Y. Nakagawa, and T. Ohmi, “FluorinePassivation of Stainless Steel for ULSI Process Equipment,” Extended Abstracts, 178thElectrochemical Society Meeting, Seattle, Abstract No. 432, pp. 631-632, October 1990.

155-2(E)

M. Maeno, N. Miki, K. Maruhashi, Y. Nakagawa and T. Ohmi, “Fluorine Passivation ofStainless Steel for ULSI Process Equipment,” Vaughn E. Akins and Hiroyuki Harada, eds.,
Automated Integrated Circuits Manufacturing, PV91-5, pp. 361-377, The ElectrochemicalSociety, Pennington, NJ, 1991.

156(C)

M. Nakamura, T. Ohmi, K. Sugiyama, Y. Mizuguchi, A. Ohkura, and K. Kawata, “All Metaland O2 Passivation Ultra Clean Gas Delivery System for Submicron ULSI,” ExtendedAbstracts, 178th Electrochemical Society Meeting, Seattle, Abstract No. 433, pp. 633-634,
October 1990.

156-2(E)

Masakazu Nakamura, Tadahiro Ohmi, Kazuhiko Sugiyama, Yasumitsu Mizuguchi,
Atsunobu Ohkura, and Koji Kawata, “All-Metal and O2 Passivation Ultra Clean Gas
Delivery System for Submicron ULSI Manufacturing, “Vaughn E. Akins and Hiroyuki
Harada, eds., Automated Integrated Circuits Manufacturing, PV91-5, pp. 379-392, The
Electrochemical Society, Pennington, NJ, 1991.
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Prof. Ohmi’s Paper

157(L)

M. Miyawaki, S. Yoshitake and T. Ohmi, “Improvement of Aluminum-Si Contact
Performance in Native-Oxide-Free Processing,” IEEE Electron Device Letters, Vol. 11, No.
10, pp. 448-450, October 1990.

158(C)Tadahiro Ohmi, “An Approach to Automated IC Manufacturing,” Ultra Clean Technology,
pp. 107-124, (Realize Inc.), Tokyo, 1990.

159(C)

Reed W. Rosenberg, Mitsushi Itano, Ichiro Kawanabe, Frederick W. Kern, Jr., Masayuki
Miyashita, and Tadahiro Ohmi, “Particles in ULSI Grade Chemicals and their Adhesion toSilicon Surfaces,” Microcontamination 90 Conference Proceedings, Santa Clara, pp.
273-291, October 1990.

160(F)

Tadashi Shibata and Tadahiro Ohmi, “Low Temperature, Defect-Free Silicon Epitaxy Usinga Low Kinetic Energy Particle Process,” Journal of Electronic Materials, Vol. 19, No. 10,
pp. 1065-1073, October 1990.

161(C)Tadahiro Ohmi and Tadashi Shibata,“Advanced Semiconductor Manufacturing Line,” 12th
Symposium on ULSI Ultra Clean Technology, Chiba, pp. 3-59, November 1990.

162(F)

Koji Kotani, Tadashi Shibata and Tadahiro Ohmi, “Hot-Carrier-Immunity Degradation inMetal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment
Processes,” Jpn. J. Appl. Phys., Vol. 29, No. 12, pp. L2289- L2291, December 1990.

163(F)

Takao Abe, Atsuo Uchiyama, Katsuo Yoshizawa, Yasuaki Nakazato, Mamoru Miyawaki
and Tadahiro Ohmi, “Surface Impurities Encapsulated by Silicon Wafer Bonding,” Jpn. J.
Appl. Phys., Vol. 29, No. 12, pp. L2315-L2318, December 1990.

164(F)

Mizuho Morita, Tadahiro Ohmi, Eiji Hasegawa, and Akinobu Teramoto, “Native Oxide
Growth on Silicon Surface in Ultrapure Wafer and Hydrogen Peroxide,” Jpn. J. Appl. Phys.,Vol. 29, No. 12, pp. L2392-L2394, December 1990.

165(F)

Haruhiro Goto, Makoto Sasaki, Tadahiro Ohmi, Tadashi Shibata, Atsushi Yamagami,
Nobuyuki Okamura, and Osamu Kamiya, “Minimizing Wafer Surface Damage andChamber Material Contamination in New Plasma Processing Equipment,” Jpn. J. Appl.
Phys., Vol. 29, No. 12, pp. L2395-L2397, December 1990.

166(B)Tadahiro Ohmi, ET AL, “the Ohmi Papers”, edited by Robert W. Keeley and Thomas H.
Cheyney, Canon Comminications, Inc., 1990.

4