Prof. Ohmi's Paper
January－December, 1993
338(L)Tadahiro Ohmi, K. Matsumoto, K. Nakamura, K. Makihara, Jun Takano, and K.
Yamamoto, “Influence of Silicon Wafer Surface Orientation on Very Thin
Oxide Quality,” Applied Physics Letters, Vol. 62, No. 4, pp. 405-407, January
1993.

339(F)

Koji Makihara, Akinobu Teramoto, Kou Nakamura, Myoung Youn Kwon,
Mizuho Morita, and Tadahiro Ohmi, “Preoxide-Controlled Oxidation for VeryThin Oxide Films,” Jpn. J. Appl. Phys., Vol. 32, No. 1B, pp. 294-297, January
1993.

340(F)

Hisayuki Shimada, Shigeki Shimomura, Kouichi Hirose, and Tadahiro Ohmi,“High-Sensitivity and High-Resolution Contact Hole Pattering by
Enhanced-Wettability Developer,” Jpn. J. Appl. Phys., Vol. 32, No. 1B, pp.
347-351, January 1993.

341(C)

Takeo Yamashita, Tadashi Shibata, and Tadahiro Ohmi, “Neuron MOS
Winner-Take-All Circuit and its Application to Associate Memory,” 1993 IEEE
International Solid-State Circuits Conference, Digest of Technical Papers, San
Francisco, pp. 236-237, February 1993.

342(C)

Tadashi Shibata, Koji Kotani, and Tadahiro Ohmi, “Real-Time Reconfigurable
Logic Circuits Using Neuron MOS Transistors,” Digest of Technical Papers,
1993 IEEE International Solid-State Circuits Conference, San Francisco, pp.
238-239, February 1993.

343(F)

Haruhiro Harry Goto, Hans-Dirk Lowe, and Tadahiro Ohmi, “Independent
Control of Ion Density and Ion Bombardment Energy in a Dual RF Excitation
Plasma,” IEEE Trans. on Semiconductor Manufacturing, Vol. 6, No. 1, pp.
58-64, February 1993.

344(F)

Keiichi Yamada, Mizuho Morita, Choon Min Soh, Hiroshi Suzuki, andTadahiro Ohmi, “Low-temperature Silicon Epitaxy Using Gas Molecular-Flow
Preshowering,” Journal of the Electrochemical Society, Vol. 140, No. 2, pp.
371-377, February 1993.

345(C)

T. Takewaki, T. Hoshi, T. Shibata, T. Ohmi, and T.Nitta, “Giant-Grain-CopperThin Films Formed by Low-Kinetic-Energy Particle Process and Their
Electrical Properties,” Abstracts, The First International Symposium on
Metallic Multilayers (MML'93), Kyoto, pp. 184, March 1993.

346(C)Tadahiro Ohmi, “Advanced Wet Chemical Processing Based on Closed
Manufacturing System,” Chemical Proceeding, 1993 Semiconductor Pure
Water and Chemicals Conference, Santa Clara, pp. 1-26, March 1993.

347(C)

Ichiro Kawanabe, G. Murase, T. Yonezawa, M. Maeno, Nobuhiro Miki, andTadahiro Ohmi, “Direct Evaluation-Inner ICP-MS for Ultrapure Chemicals,”
Chemical Proceeding, 1993 Semiconductor Pure Water and Chemicals
Conference, Santa Clara, pp. 27-44, March 1993.

348(C)

Hiroyuki Mishima and Tadahiro Ohmi, “Resistivity Variation of Isopropyl
Alcohol Due to the Kind of Electrolyte,” Chemical Proceeding, 1993
Semiconductor Pure Water and Chemicals Conference, Santa Clara, pp.
159-183, March 1993.

349(C)

Seiji Sudoh, Tadahiro Ohmi, and Hiroyuki Mishima, “Static Charge Removalwith IPA Solution,” Chemical Proceeding, 1993 Semiconductor Pure Water andChemicals Conference, Santa Clara, pp. 184-203, March 1993.

350(C)

K. Kimura, Y. Ogata, F. Tanaka, Jun Takano, Tatsuhiko Isagawa, Masahiko
Kogure, Takashi Futatsuki, and Tadahiro Ohmi, “Study on an Influence of TOC
in Hydrogen Peroxide for Advanced Wet Chemical Processing,” Chemical
Proceeding, 1993 Semiconductor Pure Water and Chemicals Conference, Santa
Clara, pp. 204-219, March 1993.

351(C)

Katsuhide Ohtani, Kiyohiko Ihara, and Tadahiro Ohmi, “Adhesion andRemoval of Metallic Impurities on PFA Surface,” Chemical Proceeding, 1993
Semiconductor Pure Water and Chemicals Conference, Santa Clara, pp.
220-236, March 1993.

352(C)

Tatsuhiko Isagawa, Masahiko Kogure, Takashi Futatsuki, and Tadahiro Ohmi,“Organic Adsorption onto Si Wafer Surface and Their Removal Using
Ozonized Ultrapure Water for Semiconductor Manufacturing,” Water
Proceeding, 1993 Semiconductor Pure Water and Chemicals Conference, Santa
Clara, pp. 117-139, March 1993.

353(F)

Tadashi Shibata and Tadahiro Ohmi, “Neuron MOS Binary-Logic Integrated
Circuits -Part I: Design Fundamentals and Soft-Hardware-Logic Circuit
Implementation,” IEEE Trans. on Electron Devices, Vol. 40, No. 3, pp.
570-576, March 1993.

354(F)Tadahiro Ohmi, Tatsuhiko Isagawa, Masahiko Kogure, and Takashi Imaoka,“Native Oxide Growth and Organic Impurity Removal on Si Surface with
Ozone-Injected Ultrapure Water,” Journal of Electrochemical Society, Vol. 140,
No. 3, pp.804-810, March 1993.

355(F)Tadahiro Ohmi, Takashi Imaoka, Takehiko Kezuka, Jun Takano, and Masahiko
Kogure, “Segregation and Removal of Metallic Impurity at Interface of Silicon
and Fluorine Etchant,” Journal of Electrochemical Society, Vol. 140, No. 3, pp.
811-818, March 1993.

356-1(C)

Shigeki Shimomura, Hisayuki Shimada, Rita Au, Mamoru Miyawaki, andTadahiro Ohmi, “High-Resolution Pattern Formation Featuring Excellent
Dimension Correlation by Enhanced-Wettability Development Technology,”
Technical Program and Abstracts, SPIE's 1993 Symposium on
Microlithography, San Jose, pp. 125, March 1993.

356-2(C)

Shigeki Shimomura, Hisayuki Shimada, Rita Au, Mamoru Miyawaki, andTadahiro Ohmi, “High-Resolution Pattern Formation Featuring Excellent
Dimension Correlation,” Proceedings, Advances in Resist Technology andProcessing X, San Jose, pp. 602-613, March 1993.

357(F)

Tadashi Shibata and Tadahiro Ohmi, “Neuron MOS Voltage-Mode Circuit
Technology for Multiple-Valued Logic,” IEICE Trans on Electron, Vol. E76-C,
No. 3, pp. 347-356, March 1993.

358(F)

Yasuo Aoki, Shintaro Aoyama, Hiroaki Uetake, Kohei Morizuka, and Tadahiro
Ohmi, “In Situ Substrate Surface Cleaning by Low-Energy Ion Bombardmentfor High Quality Thin Film Formation,” Journal Vacuum Science Technology
A, Vol. 11, No. 2, pp. 307-313, March/April 1993.

359(F)

Takahisa Nitta, Tadahiro Ohmi, Tsukasa Hoshi, Satoshi Sakai, Kunihiko
Sakaibara, Shigeru Imai, and Tadashi Shibata, “Evaluating the Large
Electromigration Resistance of Copper Interconnects Employing a Newly
Developed Accelerated Life- Test Method,” Journal of Electrochemical Society,Vol. 140, No. 4, pp. 1131-1137, April 1993.

360(F)

Koji Kotani, Tadahiro Ohmi, Satoshi Shimonishi, Tomohiro Migita, Hideki
Komori, and Tadashi Shibata, “Self-Aligned Aluminum-Gate MOSFET's
Having Ultra-Shallow Junctions Formed by 450 C Furnance Annealing,”
IEICE Trans. on Electron, Vol. E76-C, No. 4, pp. 541-547, April 1993.

361(F)

Takeo Yamashita and Tadahiro Ohmi, “Minimizing the Edge Effect in a
DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film,”
IEICE Trans. on Electron, Vol. E76-C, No. 4, pp. 556-561, April 1993.

362(F)

Takahisa Nitta, Tadahiro Ohmi, Tsukasa Hoshi, Toshiyuki Takewaki, andTadashi Shibata, “Characterizing Film Quality and Electromigration Resistanceof Giant-Grain Copper Interconnects,” IEICE Trans. on Electron, Vol. E76-C,
No. 4, pp. 626-634, April 1993.

363(F)

Tadashi Shibata and Tadahiro Ohmi, “Neuron MOS Binary-Logic Integrated
Circuits -PartII: Simplifying Techniques of Circuit Configuration and their
Practical Applications,” IEEE Trans. on Electron Devices, Vol. 40, No. 5, pp.
974-979, May 1993.

364(C)

Kazuo Tsukazaki, Seiji Aotani, and Tadahiro Ohmi, “Non-Restrictive
Evaluation Method for All Metal In-Line Gas Filters Using Microsol,” 1993
Proceedings, 39th Annual Technical Meeting, Institute of Environmental
Sciences, Vol. 1, Las Vegas, pp. 149-157, May 1993.

365(C)

Fumitomo Kunimoto, Tadahiro Ohmi, and Frederick W. Kern, Jr., “Rapid
Surface Cleaning by Spin Cleaning Technique,” 1993 Proceedings, 39th
Annual Technical Meeting, Institute of Environmental Sciences, Vol. 1, Las
Vegas, pp. 245-254, May 1993.

366(C)Tadahiro Ohmi, “Tohoku University Research on Wafer Surface Cleaning,”
1993 Proceedings, 39th Annual Technical Meeting, Institute of Environmental
Sciences, Vol. 1, Las Vegas, pp. 255-267, May 1993.

367(C)

Takashi Futatsuki, Hitoshi Morinaga, Tadahiro Ohmi, Eiji Fuchita, Masaaki
Oda, and Chikara Hayashi, “Mechanism of Particle Contamination Removalfrom Si Wafers,” 1993 Proceedings, 39th Annual Technical Meeting, Instituteof Environmental Sciences, Vol. 1, Las Vegas, pp. 282-287, May 1993.

368(C)

Masahiko Kogure, Tatsuhiko Isagawa, Takashi Futatsuki, Naomichi Yonekawa,and Tadahiro Ohmi, “Ozonized Ultrapure Water Treatment of Organic
Contamination on Si-Wafer Surface,” 1993 Proceedings, 39th Annual
Technical Meeting, Institute of Environmental Sciences, Vol. 1, Las Vegas, pp.
380-385, May 1993.

369(C)Francois Derouin, Hideki Aomi, and Tadahiro Ohmi, “Mechanism of Metallic
Contamination on Si Wafers,” 1993 Proceedings, 39th Annual Technical
Meeting, Institute of Environmental Sciences, Vol. 1, Las Vegas, pp. 460-465,
May 1993.

E370(C)

Masayuki Toda, Masahiko Shishido, Yoh-ichi Kanno, Masaru Umeda Takahisa
Nitta, Yoshio Saito and Tadahiro Ohmi, “Wafer Transportation Technology for
Closed Manufacturing Process-Transportation on a Lubricating Gas Film-,”
1993 Proceedings, 39th Annual Technical Meeting, Institute of Environmental
Sciences, Vol. 1, Las Vegas, pp.478-482, May 1993.

E371(C)

Terutaka Sahara, Masahiko Kogure, Tadahiro Ohmi, Yutaka Hiratuka andYasuo Kamimura, “N2 Sealed Wet Station for Advanced Native Oxide Free
Processing,” 1993 Proceedings, 39th Annual Technical Meeting, Institute ofEnvironmental Sciences, Vol. 1, Las Vegas, pp. 483-487, May 1993.

E372(C)

Kazuma Yamamoto, Koji Makihara and Tadahiro Ohmi, “Portable Wafer
Transportation System with Ultraclean N2 Gas Continuous Purge Function,”
1993 Proceedings, 39th Annual Technical Meeting, Institute of Environmental
Sciences, Vol. 1, Las Vegas, pp. 500-505, May 1993.

E373-1(C)Takashi Matuura, Junichi Murota, Tadahiro Ohmi and Shoichi Ono,
“Comparison of Polysilicon Etching between Pure and Nitrogen Added
Chlorine ECR Plasmas,” Extended Abstracts, 183th Electrochemical Society
Meeting, Honolulu, Abstract No. 246, pp. 358-359, May 1993.

E373-2 (P)Takashi Matuura, Junichi Murota, Tadahiro Ohmi and Shoichi Ono,
“Comparison of Polysilicon Etching between Pure and Nitrogen Added
Chlorine ECR Plasmas,” Edited by G. S. Mathad and Y. Horiike, Highly
Selective Dry Etching and Damage Control, PV93-21, pp. 141-148, The
Electrochemical Society, Pennington, NJ 1993.

E374-1(C)Yuji Maeda, Hiroshi Suzuki, T. Sakoh, K. Morita, Mizuho Morita and Tadahiro
Ohmi, “Selective Tungsten Deposition Using Cold Susceptor,” Extended
Abstracts, 183th Electrochemical Society Meeting, Honolulu, Abstract No. 303,
pp. 461-462, May 1993.

E374-2(P)Y. Maeda, H. Suzuki, T. Sakoh, K. Morita, M. Morita and Tadahiro Ohmi,“Selective Tungsten Deposition Using Cold Susceptor,” Edited by
T.O.Herndon, K.Okabayashi and N.Alvi, Interconnects, Contact Metallization,and Multilevel Metallization & Edited by H. S. Rathore, R. A. Susko and M.
Kashiwagi, Reliability Semiconductor Devices, Interconnects, and Thin
Insulator Materials, PV93-25, pp. 179-189, The Electrochemical Society,
Pennington, NJ 1993.

E375-1(C)Keiichi Yamada, H.Yamada, Nobuhiro Konishi, Yasuaki Kawai and Tadahiro
Ohmi, “Metal-to-Silicon Contact Formation for Highly Reliable ULSI by
Low-Energy Ion Bombardment Process,” Extended Abstracts, 183th
Electrochemical Society Meeting, Honolulu, Abstract No. 310, pp. 473-474,
May 1993.

E375-2 (P)K. Yamada, H. Yamada, N. Konishi, Y. Kawai and Tadahiro Ohmi,“Metal-To-Silicon Contact Formation for Highly Reliable ULSI by
Low-Energy Ion Bombardment Process,” Edited by T. O. Herndon, K.
Okabayashi and N. Alvi, Interconnects, Contact Metallization, and Multilevel
Metallization & Edited by H. S. Rathore, R. A. Susko and M. Kashiwagi,
Reliability Semiconductor Devices, Interconnects, and Thin Insulator Materials,
PV93-25, pp. 256-267, The Electrochemical Society, Pennington, NJ 1993.

E376-1(C)Tadahiro Ohmi, Koichi Matsumoto, Koji Makihara, K. Nakamura, Kazuma
Yamamoto and Jun Takano, “Effect of Silicon Surface Orientation on VeryThin Oxide Reliability,” Extended Abstracts, 183th Electrochemical Society
Meeting, Honolulu, Abstract No. 382, pp. 573-574, May 1993.

E376-2 (P)Tadahiro Ohmi, K. Matsumoto, K. Nakamura, K. Makihara, K. Yamamoto and
J. Takano, “Effect of Silicon Surface Orientation on Very Thin Oxide
Reliability,” Edited by T. O. Herndon, K. Okabayashi and N. Alvi,Interconnects, Contact Metallization, and Multilevel Metallization & Edited by
H. S. Rathore, R. A. Susko and M. Kashiwagi, Reliability Semiconductor
Devices, Interconnects, and Thin Insulator Materials, PV93-25, pp. 362-371,
The Electrochemical Society, Pennington, NJ 1993.

E377-1(C)Mizuho Morita, K. Nakamura, A. Teramoto, Koji Makihara and Tadahiro Ohmi,“High Reliability of Ultraclean Oxide Films,” Extended Abstracts, 183th
Electrochemical Society Meeting, Honolulu, Abstract No. 393, pp. 589-590,
May 1993.

E377-2 (P)M. Morita, K. Nakamura, A. Teramoto, K. Makihra and Tadahiro Ohmi, “High
Reliability of Ultraclean Oxide Films,” Edited by T. O. Herndon, K.
Okabayashi and N. Alvi, Interconnects, Contact Metallization, and Multilevel
Metallization & Edited by H. S. Rathore, R. A. Susko and M. Kashiwagi,
Reliability Semiconductor Devices, Interconnects, and Thin Insulator Materials,
PV93-25, pp. 451-460, The Electrochemical Society, Pennington, NJ 1993.

E378-1(C)Yoshinori Nakagawa, Hideki Aomi, Jun Takano and Tadahiro Ohmi, “New
Measurement Method of Adsorbed Moisture Concentration on Solid Surface,”
Extended Abstracts, 183th Electrochemical Society Meeting, Honolulu,
Abstract No. 780, pp. 1131-1132, May 1993.

E378-2 (P)Yoshinori Nakagawa, Hideki Aomi, Jun Takano and Tadahiro Ohmi, “New
Measurement Method of Adsorbed Moisture Concentration on Solid Surface,”
Edited by R. Novak, T. Ito, D. N. Schmidt and D. Reedy, Contamination
Control and Defect Reduction in Semiconductor Manufacturing II, PV94-3, pp.
97-108, The Electrochemical Society, Pennington, NJ 1994.

E379(C)

Hideki Aomi, Francois Derouin and Tadahiro Ohmi, “The Influence of Anion
Species on the Cu Adhesion onto Si Wafer Surface,” Extended Abstracts, 183th
Electrochemical Society Meeting, Honolulu, Abstract No. 788, pp. 1144-1145,
May 1993.

E380-1(C)Michel Morin, Shinji Miyoshi, Koji Kawada and Tadahiro Ohmi, “Ultraclean
Welding for High Grade Gas Handling Technology,” Extended Abstracts,
183th Electrochemical Society Meeting, Honolulu, Abstract No. 802, pp.
1167-1168, May 1993.

E380-2(P)Michel Morin, Shinji Miyoshi, Koji Kawada and Tadahiro Ohmi, “Ultraclean
Welding for High Grade Gas Handling Technology,” Edited by R. Novak, T.
Ito, D. N. Schmidt and D. Reedy, Contamination Control and Defect Reduction
in Semiconductor Manufacturing II, PV94-3, pp. 295-305, The Electrochemical
Society, Pennington, NJ 1994.

E381(C)

Tadahiro Ohmi, “Dual-Frequency-Excitation Plasma for Perfect Parameter
Controlled Advanced Semiconductor Processing,” Proceedings, The Second
International Symposium on Sputtering & Plasma Processes -ISSP'93-,” Tokyo,
pp. 123-126, May 1993.

E382(C)

Tadahiro Ohmi and Tadashi Shibata, “Advanced Scientific Semiconductor
Processing Based on Precisely Controlled Low Energy Ion Bombardment,”
EMRS 1993 Spring Meeting, Strasbourg, Abstract No. CD-III. 2, May 1993.

E383 (F)J. Echigoya, T. Satoh and Tadahiro Ohmi, “Thin Film Reaction and Interface
Structure of Cu on (111)Si,” Acta Metall. Mater, Vol. 41, No. 1, pp. 229-234,
1993.

E384 (F)Tadahiro Ohmi, “ULSI Reliability through Ultraclean Processing,” Proceedingof the IEEE, Special Issue on VLSI Reliability, Vol. 81, No. 5, pp. 716-729,
May 1993.

E385 (F)Tadahiro Ohmi, Atsushi Ohki, Masakazu Nakamura, Koji Kawada, Tsuyoshi
Watanabe, Yoshinori Nakagawa, Shinji Miyoshi, Shinji Takahashi and Michael
S. K. Chen, “The Technology of Chromium Oxide Passivation on StainlessSteel Surface,” Journal of Electrochemical Society, Vol. 140, No. 6, pp.
1691-1699, June 1993.

E386(C)

Tadashi Shibata and Tadahiro Ohmi, “Four-Terminal Device - Impact of a New
Functional Transistor on Logic Integrated Circuits Implementation,”
Proceedings, International Workshop on Process and Devices of Scaled LSI's,
Seoul, pp. 1-6, June 1993.

E387(C)

Koji Makihara, Koh Nakamura, Koichi Matsumoto, Jun Takano, Kazuma
Yamamoto and Tadahiro Ohmi, “High-Reliability Very-Thin Gate-Oxide Films
Formed by Ultraclean Oxidation,” Proceedings, International Workshop on
Process and Devices of Scaled LSI's, Seoul, pp. 52-56, June 1993.

E388(C)Francois Derouin, Hideki Aomi and Tadahiro Ohmi, “Anions Effects on
Metallic Contamination on Silicon Wafers,” Proceedings, International
Workshop on Process and Devices of Scaled LSI's, Seoul, pp. 144-151, June
1993.

E389(C)

Masaki Hirayama, Wataru Shindo and Tadahiro Ohmi, “Low-Temperature
Silicon Epitaxy by Precisely Controlled Plasma Processing,” Proceedings,
International Workshop on Process and Devices of Scaled LSI's, Seoul, pp.
152-157, June 1993.

E390 (B)

Tadahiro Ohmi, “Preface,” Ultraclean Technology Handbook Vol.1 Ultrapure
Water, Marcel Dekker, Inc., June 1993.

E391 (B)Michiya Kawakami, Makoto Ohwada, Yasuyuki Yagi, and Tadahiro Ohmi,“Ultrapure Water Evaluation by the Water Spot Method”, Ultraclean
Technology Handbook Vol.1 Ultrapure Water, Chapter Ⅶ-11., pp.793-796,
Marcel Dekker, Inc., June 1993.

E392 (B)Michiya Kawakami, and Tadahiro Ohmi, “Outline,” Ultraclean Technology
Handbook Vol.1 Ultrapure Water, Chapter Ⅷ-2., pp.803-804, Marcel Dekker,
Inc., June 1993.

E393 (B)Michiya Kawakami, Yasuyuki Yagi, Tadahiro Ohmi, and Motohiro Okazaki,“Wet Etch Cleaning-Water Spot Growth Conditions,” Ultraclean Technology
Handbook Vol.1 Ultrapure Water , Chapter Ⅷ -3.-D, pp.831-834, Marcel
Dekker, Inc., June 1993.

E394 (B)Michiya Kawakami, Makoto Ohwada, Yasuyuki Yagi, and Tadahiro Ohmi,“Suppression of Native Oxide,” Ultraclean Technology Handbook Vol.1
Ultrapure Water , Chapter Ⅷ-5, pp.857-868, Marcel Dekker, Inc., June 1993.

E395 (B)Yasuyuki Yagi, Michiya Kawakami, Kenichi Sato, and Tadahiro Ohmi,“High-Temperature, High-Pressure, Ultrapure Water Spray-Cleaning,”
Ultraclean Technology Handbook Vol.1 Ultrapure Water , Chapter Ⅷ -7,
pp.877-894, Marcel Dekker, Inc., June 1993.

E396 (B)

Tadahiro Ohmi, Ichiro Kawanabe, Masayuki Miyashita, and Fredrick W. Kern,
Jr., “The Future of Wet Processing,” Ultraclean Technology Handbook Vol.1
Ultrapure Water , Chapter Ⅷ-8, pp.895-908, Marcel Dekker, Inc., June 1993.

E397 (F)

Katsuhide Ohtani, Tadahiro Ohmi and K. Ihara, “Study on Adhesion andRemoval of Metallic Impurities on a Perfluoroalkoxy Resin Surface,” Journalof Electrochemical Society, Vol. 140, No. 8, pp. 2244-2249, August 1993.

E398 (F)

Hisayuki Shimada, Masanobu Onodera, Toru Nonaka, Kouichi Hirose andTadahiro Ohmi, “Advanced Development Process for Ultra Fine Photoresist
Patterns,” IEEE Trans. on Semiconductor Manufacturing, Vol. 6, No. 3, pp.
269-273, August 1993.

E399 (F)

Mitsushi Itano, Frederick W. Kern, Jr., Masayuki Miyashita and Tadahiro Ohmi,“Particle Removal from Silicon Wafer Surface in Wet Cleaning Process,” IEEE
Trans on Semiconductor Manufacturing, Vol. 6, No. 3, pp. 258-267, August
1993.

E400(C)

Takashi Matsuura, Junichi Murota, Yasuji Sawada and Tadahiro Ohmi,“Layer-by-Layer Etching of Si by Self-Limited Adsorption of Chlorine with
Alternated Irradiation of Low Energy Ar+ Ions,” Extended Abstracts, 1993
International Conference on Solid State Devices and Materials, Chiba, pp.
83-85, August 1993.

E401(C)

Mizuho Morita and Tadahiro Ohmi, “Characterization and Control of Native
Oxide on Silicon,” Extended Abstracts, 1993 International Conference on Solid
State Devices and Materials, Chiba, pp. 95-97, August 1993.

E402(C)

K. Ohmi, K. Nakamura, T. Futatsuki, K. Makihara and T. Ohmi, “Influence of
Si-SiO2 Interface Microroughness and Dopant Concentration on Electron
Channel Mobility in MOSFET,” Extended Abstracts, 1993 International
Conference on Solid State Devices and Materials, Chiba, pp. 149-151, August
1993.

E403(C)

Masaki Hirayama, Wataru Shindo and Tadahiro Ohmi, “Impact ofHigh-Precision RF-Plasma Control on Very-Low-Temperature Silicon
Epitaxy,” Extended Abstracts, 1993 International Conference on Solid State
Devices and Materials, Chiba, pp. 210-212, August 1993.

E404(C)H. Suzuki, Y. Maeda, K. Morita, M. Morita and T. Ohmi, “Selective Tungsten
CVD with High Deposition Rate for ULSI Application,” Extended Abstracts,
1993 International Conference on Solid State Devices and Materials, Chiba, pp.
540-542, August 1993.

E405(C)T. Hoshi, H. Yamada, T. Takewaki, T. Shibata, T. Ohmi and T. Nitta,“Accelerated Electromigration Testing of Giant-Grain Copper Interconnects
under Extremely Large Current Stress,” Extended Abstracts, 1993 International
Conference on Solid State Devices and Materials, Chiba, pp. 561-563, August
1993.

E406(C)T. Iwamoto, H. Shimada, S. Shimomura, M. Onodera and T. Ohmi,“High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added
Developing System,” Extended Abstracts, 1993 International Conference on
Solid State Devices and Materials, Chiba, pp. 573-575, August 1993.

E407(C)

K. Nakamura, K. Ohmi, K. Yamamoto, K. Makihara and T. Ohmi, “Silicon
Wafer Orientation Dependence of MOS Device Reliability,” Extended
Abstracts, 1993 International Conference on Solid State Devices and Materials,
Chiba, pp. 585-587, August 1993.

E408(C)

K. Ino, I. Natori, A. Ichikawa and T. Ohmi, “In Situ Chamber Cleaning Using
Halogenated-Gas Plasma Evaluated by Plasma-Parameter Extraction,”
Extended Abstracts, 1993 International Conference on Solid State Devices andMaterials, Chiba, pp. 588-590, August 1993.

E409(C)

Hiroaki Uetake, Gang Su Jong and Tadahiro Ohmi, “Proposal for Equipment
Standardization by Dual-Frequency-Excitation Plasma Processing,” Extended
Abstracts, 1993 International Conference on Solid State Devices, Chiba, pp.
591-593, August 1993.

E410(C)

T. Ohmi, T. Kezuka, M. Itano, M. Kubo, and M. Miyawasaki, “Particle
Deposition Control for Various Wafer Surfaces in Acidic Solution with
Surfactant,” Proceedings of the Abstracts, 24th Annual Meeting of the Fine
Particle Society, Chicago, pp. 63, August 1993.

E411(C)

Hitoshi Morinaga, Takashi Futatsuki and Tadahiro Ohmi, “Behaviour of Ultra
Fine Particles on Silicon Substrates,” Proceedings of the Abstracts, 24th Annual
Meeting of the Fine Particle Society, Chicago, pp. 108, August 1993.

E412 (F)Tadahiro Ohmi, Yoshinori Nakagawa, Hideki Aomi and Jun Takano, “NewTequnique for the Measurement of Adsorbed Moisture Concentration on a
Solid Surface,” Rev. Sci. Instrum., Vol. 64, No. 9, pp. 2683-2686, September
1993.

E413(C)

Tadahiro Ohmi, “Ultraclean Technology for ULSI,” International Symposium
on Semiconductor Manufacturing, Austin, pp. 311-330, September 1993.

E414(C)

Yoshinori Nakagawa, Hiroto Izumi, Shinji Miyoshi, Tsutomu Kojima andTadahiro Ohmi, “Measurement of Adsorbed Moisture Concentration on Solid
Surface by Using Anhydrous Hydrogen Fluoride,”
Proceedings,
Microcontamination 93, San Jose, pp. 586-595, September 1993.

E415(C)

Shinji Takahashi, Shinji Miyoshi, Tsutomu Kojima, Tomoyuki Koyama andTadahiro Ohmi, “Corrosion-Resistant and Non- Catalytic Properties of Cr2O3
Surface Treatment for Specialty Gases,” Proceedings, Microcontamination 93,
San Jose, pp. 596-605, September 1993.

E416(C)Shinji Miyoshi, Tsutomu Kojima, Tetsuo Suenaga, Tadahiro Ohmi and
Yasumitsu Mizuguchi, “Metal Fume-Free Welding Technology,” Proceedings,
Microcontamination 93, San Jose, pp. 606-615, September 1993.

E417(C)

Nobukazu Ikeda, Michio Yamaji, Tsutomu Shinohara and Tadahiro Ohmi,“Proposal of Fitting for the Development of Low Cost Ultra High Purity Gas
Delivery Systems by the Achievement of Inspection Free Installation,”
Proceedings, Microcontamination 93, San Jose, pp. 616-624, September 1993.

E418-1(C)K. Tomita, T. Migita, S. Shimonishi, Tadashi Shibata, Tadahiro Ohmi and
Takahisa Nitta, “Eliminating Metal-Sputter Contamination in Ion Implanter for
Low Reverse-Bias Current, 450℃-Annealed Junctions,” Extended Abstracts,
184th Electrochemical Society Meeting, New Orleans, Abstract No. 282, pp.
461-462, October 1993.

E418-2 (P)K. Tomita, T. Migita, S. Shimonishi, Tadashi Shibata, Tadahiro Ohmi and
Takahisa Nitta, “Eliminating Metal-Sputter Contamination in Ion Implanter for
Low Reverse-Bias Current, 450℃-Annealed Junctions,” H. J. Queisser, J. E.
Chung, K. E. Bean, T. J. Shaffner and H. Tsuya eds., The Degradation ofElectronic Devices due to Device Operation as well as Crystalline andProcess-Induced Defects, PV94-1, pp. 286-297, The Electrochemical Society,
Pennington, NJ, 1994.

E419-1(C)Tadahiro Ohmi, “Advanced Wet Chemical Cleaning for Future ULSI
Fabrication,” Extended Abstracts, 184th Electrochemical Society Meeting, New
Orleans, Abstract No. 302, pp. 495-496, October 1993.

E419-2 (P)Tadahiro Ohmi, “Advanced Wet Chemical Cleaning for Future ULSI
Fabrication,” Jerzy Ruzyllo and Richard E. Novak eds., Cleaning Technology
in Semiconductor Device Manufacturing, PV94-7, pp. 3-14, The
Electrochemical Society, Pennington, NJ, 1994.

E420-1(C)

Hitoshi Morinaga, Takashi Futatsuki and Tadahiro Ohmi, “Behavior of Ultra
Fine Metallic Particles (-10nm) on Silicon Wafer Surface,” Extended Abstracts,
184th Electrochemical Society Meeting, New Orleans, Abstract No. 317, pp.
521-522, October 1993.

E420-2 (P)Hitoshi Morinaga, Takashi Futatsuki and Tadahiro Ohmi, “Behavior of Ultra
Fine Metallic Particles (-10nm) on Silicon Wafer Surface,” Jerzy Ruzyllo andRichard E. Novak eds., Cleaning Technology in Semiconductor Device
Manufacturing, PV94-7, pp. 458-465, The Electrochemical Society, Pennington,
NJ, 1994.

E421-1(C)K. Ino, I. Natori, A. Ichikawa and Tadahiro Ohmi, “In Situ Chamber Cleaning
Using Halogenated-Gas Plasmas Evaluated by Extracted-Plasma-Parameter
Analysis,” Extended Abstracts, 184th Electrochemical Society Meeting, New
Orleans, Abstract No. 329, pp. 539-540, October 1993.

E421-2 (P)K. Ino, I. Natori, A. Ichikawa and Tadahiro Ohmi, “In Situ Chamber Cleaning
Using Halogenated-Gas Plasmas Evaluated by Extracted-Plasma-Parameter
Analysis,” Jerzy Ruzyllo and Richard E. Novak eds., Cleaning Technology in
Semiconductor Device Manufacturing, PV94-7, pp. 339-346, The
Electrochemical Society, Pennington, NJ, 1994.

E422-1(C)K. Nakamura, T. Futatsuki, K. Makihara and Tadahiro Ohmi, “Ultra Thin
Oxide Formation Using Chemical Oxide Passivation,” Extended Abstracts,
184th Electrochemical Society Meeting, New Orleans, Abstract No. 343, pp.
563-564, October 1993.

E422-2 (P)K. Nakamura, T. Futatsuki, K. Makihara and Tadahiro Ohmi, “Ultra Thin
Oxide Formation Using Chemical Oxide Passivation,” Jerzy Ruzyllo andRichard E. Novak eds., Cleaning Technology in Semiconductor Device
Manufacturing, PV94-7, pp. 70-77, The Electrochemical Society, Pennington,
NJ, 1994.

E423-1(C)N. Yonekawa, S. Yasui, F. Kunimoto, Frederick W. Kern, Jr. and Tadahiro
Ohmi, “Contamination Removal by Wafer Spin Cleaning Process with
Advanced Chemical Distribution System,” Extended Abstracts, 184th
Electrochemical Society Meeting, New Orleans, Abstract No. 346, pp. 569-570,
October 1993.

E423-2 (P)N. Yonekawa, S. Yasui, F. Kunimoto, Frederick W. Kern, Jr. and Tadahiro
Ohmi, “Contamination Removal by Wafer Spin Cleaning Process with
Advanced Chemical Distribution System,” Jerzy Ruzyllo and Richard E. Novak
eds., Cleaning Technology in Semiconductor Device Manufacturing, PV94-7,
pp. 94-101, The Electrochemical Society, Pennington, NJ, 1994.

E424(C)

Hiroshi Ishii, Tadashi Shibata, Hideo Kosaka and Tadahiro Ohmi,“Hardware-Learning Neural Network LSI Using a Highly-Functional Transistor
Simulating Neuron Action,” Proceedings, International Joint Conference on
Neural Networks IJCNN'93, Nagoya, pp. 907-910, October 1993.

E425(C)

Tadahiro Ohmi, “Global Collaboration for Future Scientific Semiconductor
Manufacturing form the Stage of Research and Development,” 1993
International Trade Partners Conference, (11pages), Maui, November 1993.

E426(C)

Tadahiro Ohmi and Tadashi Shibata, “Ultra Clean Technology Its Impact on
High Integrity Ultra-Thin Gate Oxide Formation,” SEMICON/Korea TechnicalSymposium 93, Seoul, pp. 195-202, November 1993.

E427 (L)Takashi Matsuura, Junichi Murota, Yasuji Sawada and Tadahiro Ohmi,“Self-Limited Layer-by-Layer Etching of Si by Alternated Chlorine Adsorption
and Ar+ Ion Irradiation,” Applied Physics Letters, Vol. 63, No. 20, pp.
2803-2805, November 1993.

E428 (F)Masahiko Kogure, Takashi Futatsuki, Jun Takano, Tatsuhiko Isagawa, K.
Kimura, Y. Ogata, F. Tanaka and Tadahiro Ohmi, “Influence of Organic
Impurities in Hydrogen Peroxide for Advanced Wet Chemical Processing,”
Journal of Electrochemical Society, Vol. 140, No. 11, pp.3321-3326, November
1993.

E429（W）

K. Yamada, K. Tomita, and T. Ohmi, “Silicon-Capping Silicidation
Technology for Ultra-Low Contact Resistance Metallization,” the 3rd
Microelectronics Conference Proceeding, pp.209-219, November 1992.

E430 (W)

Hitoshi Morinaga, Takashi Futatsuki, Tadahiro Ohmi, Eiji Fuvhita, Masaaki
Oda, and Chikara Hayashi, “Behavior of Ultra Fine Metallic Particles (-10nm)
on Silicon Wafer Surface,” the 3rd Microelectronics Conference Proceeding,
pp.241-249, November 1992.

E431 (W)

Tadashi Shibata, and Tadahiro Ohmi, “Four-Terminal Device-Impact of a New
Functional Transistor on Logic Integrated Circuits Implementation,” the 3rd
Microelectronics Conference Proceeding, pp.281-286, November 1992.

E432(C)H. Yamada, T. Hoshi, T. Takewaki, T. Shibata, T. Ohmi, and T. Nitta,“Evaluation of Electromigration and Stressmigration Reliabilities of CopperInterconnects by a Simple Pulsed-Current Stressing Technique,” Technical
Digest, International Electron Devices Meeting 1933, Washington, DC, pp.
269-272, December 1993.

E433(C)

H. Kosaka, Tadashi Shibata, H. Ishii and Tadahiro Ohmi, “An Excellent
Weight-Updating-Linearity Synapse Memory Cell for Self-Learning Neuron
MOS Neural Network,” Technical Digest, International Electron Devices
Meeting 1993, Washington, DC, pp. 623-626, December 1993.

E434(C)

Tadahiro Ohmi, “High-Quality Gate Oxide Films Based on Ultraclean
Technology,” 24th IEEE Semiconductor Interface Specialists Conference, Ft.
Lauderdale, paper1.1, (2pages), December 1993.

E435 (P)Fumitomo Kunimoto, Tadahiro Ohmi and Frederick W. Kern, Jr., “Metal
Removal by Wafer Spin Cleaning Process with Advanced Chemical
Distribution System,” Gregg S. Higashi, Eugene A. Irene and Tadahiro Ohmi,
eds., Materials Research Society Symposium Proceedings Vol. 315, Surface
Chemical Cleaning and Passivation for Semiconductor Processing, pp. 313-320,
1993.

E436 (P)

Hideki Aomi, Francois Derouin and Tadahiro Ohmi, “The Adhesion and theProtection of Metallic Impurities at the Interface of Si Wafer Surface withAnion Species,” Gregg S. Higashi, Eugene A. Irene and Tadahiro Ohmi, eds.,
Materials Research Society Symposium Proceedings Vol. 315, Surface
Chemical Cleaning and Passivation for Semiconductor Processing, pp. 333-337,
1993.

E437 (P)Jun Takano, Koji Makihara and Tadahiro Ohmi, “Chemical Oxide Passivation
for Very Thin Oxide Formation,” Gregg S. Higashi, Eugene A. Irene andTadahiro Ohmi, eds., Materials Research Society Symposium Proceedings Vol.
315, Surface Chemical Cleaning and Passivation for Semiconductor Processing,pp. 381-386, 1993.

E438 (P)Shintaro Aoyama and Tadahiro Ohmi, “Texture Analysis of Si(100) andSi(111) Surfaces Using Autocovariance of AFM Images,” Gregg S. Higashi,
Eugene A. Irene and Tadahiro Ohmi, eds., Materials Research Society
Symposium Proceedings Vol. 315, Surface Chemical Cleaning and Passivationfor Semiconductor Processing, pp. 417-422, 1993.

E439(C)

Tadahiro Ohmi, “Material Innovation for Flexible Programmable andIntelligent ULSI System in 21st Century,” Materials Research Society
Symposium Proceedings Vol. 318, Interface Control of Electrical, Chemical,
and Mechanical Properties, pp. xxiii-xxix, Boston, Mass. December 1993.

E440 (F)Tadahiro Ohmi and Tadashi Shibata, “Advanced Scientific Semiconductor
ProcessingBasedon
High-Precision
Controlled
Low-Energy
Ion
Bombardment,” Thin Solid Films, Vol. 241, pp. 159-166, 1993.

E441 (F)Tadahiro Ohmi, Takashi Imaoka, Jun Takano and Fumitomo Kunimoto,“Improved Wet Chemical Cleaning for Realization of Ultra Clean Wafer
Surface,” Particulate Science and Technology (an International Journal), Vol.
11, No. 3-4, pp. 229-243, July-December 1993.