Prof. Ohmi's Paper
January－December, 2006
E1174 (F)Ichiko Misumi, Satoshi Gonda, Tomizo Kurosawa, Yasushi Azuma, Toshiyuki Fujimoto,
Isao Kojima, Toshihisa Sakurai, Tadahiro Ohmi and Kiyoshi Takamasu, “Reliability ofparameters of associated base straight line in step height samples: Uncertainty evaluationin step height measurements using nanometrological AFM,” Precision Engineering,
Volume 30, Issue 1, pp.13-22, January 2006.

E1175 (W)

Tadahiro Ohmi, “New Paradigm of Semiconductor Industry,” Proceeding of Lecture at
National Chiao Tung University, January 2006.

E1176 (F)Tadahiro Ohmi, Masaki Hirayama, and Akinobu Teramoto, “New era of silicon
technologies due to radical reaction based semiconductor manufacturing,” Journal ofPhysics D: Applied Physics, 39, R1-R17, January 2006.

E1177 (W)

T.Ohmi, “HIGH-PERFORMANCE THREE-DIMENSIONAL MISFET DEVICEFABLICATED BY USING DAMAGE-FREE PLASMA PROCESS TECHNOLOGY,”
THE 3rd INTERNATIONAL SYMPOSIUM ON SYSTEM CONSTRUCTION OF
GLOBAL-NETWORK-ORIENTED
INFORMATIONELECTRONICS(IGNOIE-COE05), Tohoku University, 21th Century COE Program, pp.77-91, January
2006.

E1178 (F )Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa and Tadahiro Ohmi, “High quality
silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at lowtemperature,” Microelectronics Journal, Vol.37, No.1 (2006), pp.44-49, (2006 ElsevierLtd.) January 2006.

E1179 (F)Kouji KOSAKA, Tetsuya IWABUCHI, Tetsuro BABA, Taishi ENDO, Hiroyuki
HASHIGUCHI, Hiroyuki FURUKAWA, Yoshiya EGASHIRA, Seiji HASHIMOTO,Mutsumi TOUGE, Kiyohiko UOZUMI, Akira NAKADA, Hiroshi KUBOTA, andTadahiro OHMI, “Wear Reduction Method for Frictionally Fast Feeding Piezoactuator,”
Japanese Journal of Applied Physics (JJAP) Part 1 Vol.45 No.2A, pp.1005-1011,February 2006.

E1180 (W)

T.Ohmi, HONORARY INVITED SPEAKER, “Where We Were and Where are going in
the field of wet chemical processings of semiconductor industry,” 2006 Semiconductor
Pure Water and Chemicals Conference, CD-ROM, February 2006.

E1181 (F)

Akinobu Teramoto, Rihito Kuroda, Masanori Komura, Kazufumi Watanabe, Shigetoshi
Sugawa and Tadahiro Ohmi, “Capacitance-Voltage Measurement Method for Ultrathin
Gate Dielectrics Using LC Resonance Circuit,” IEEE TRANSACTIONS ON
SEMICONDUCTOR MANUFACTURING, VOL.19, NO.1, pp.43-49, February 2006.

E1182 (F)Philippe Gaubert, Akinobu Teramoto, Tatsufumi Hamada, Masashi Yamamoto, Koji
Kotani and Tadahiro Ohmi, “1/f Noise Suppression of pMOSFETs Fabricated on Si(100)and Si(110) Using an Alkali-Free Cleaning Process,” IEEE TRANSACTIONS ON
ELECTRON DEVICES, VOL.53, NO.4, pp.851-856, April 2006.

E1183 (L)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Improved the law-of-cosines-based fast
search method for vector quantization by updating angular information,” PatternRecognition Letters Vol.27, Issue 6, pp.688-695, April 2006.

E1184 (F)

Kaoru NAKAJIMA, Motofumi SUZUKI, Kenji KIMURA, Masashi YAMAMOTO,Akinobu TERAMOTO, Tadahiro OHMI and Takeo HATTORI, “Lattice Distortion at
SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering
Spectroscopy/Channeling,” Japanese Journal of Applied Physics Vol.45, No.4A, pp.
2467-2469, April 2006.

E1185 (F)Weitao CHENG, Akinobu TERAMOTO, Masaki HIRAYAMA, Shigetoshi SUGAWAand Tadahiro OHMI, “Impact of Improved High-Performance Si(110)-Oriented
Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully
Depleted Silicon-on-Insulator Devices,” Japanese Journal of Applied Physics Vol. 45, No.
4B, pp. 3110-3116, April 2006.

E1186 (F)Ichirou TAKAHASHI, Hiroyuki SAKURAI, Tatsunori ISOGAI, Masaki HIRAYAMA,Akinobu TERAMOTO, Shigetoshi SUGAWA and Tadahiro OHMI, “Relationshipbetween Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for
Metal-Ferroelectric-Insulator-Si Structure Device Formation,” Japanese Journal ofApplied Physics Vol.45, No.4B, pp. 3207-3212, April 2006.

E1187 (F)

TAKAHIRO NAKAYAMA, MASAHIRO KONDA, KOJI TAKEUCHI, KOJI KOTANI,ANDTADAHIROOHMI,“STILLIMAGE
COMPRESSION
WITH
MEAN-RESIDUAL
DOMAIN
ADAPTIVERESOLUTIONVECTORQUANTIZATION TECHNUQUE,” Intelligent Automation and Soft Computing, Vol. 12,
No.3, pp. 231-243, May 2006.

E1188 (F)

TAKAHIRO NAKAYAMA, KOJI TAKEUCHI, MASAHIRO KONDA, KOJI KOTANI,AND TADAHIRO OHMI, “IMAGE SCRAMBLING METHOD FOR INFORMATION
DISTRIBUTION VIA VECTOR QUANTIZATION CODEBOOK PROCESSING,”Intelligent Automation and Soft Computing, Vol. 12, No.3, pp. 245-256, May 2006.

E1189 (F)

KOJI KOTANI, QIU CHEN, FEIFEI LEE, AND TADAHIRO OHMI,“REGION-DIVISION VECTOR QUANTIZATION HISTGRAM METHOD FOR
HUMAN FACE RECOGNITION,” Intelligent Automation and Soft Computing, Vol. 12,No.3, pp. 257-268, May 2006.

E1190 (F)ZHIBIN PAN, TADAHIRO OHMI, and KOJI KOTANI, “AN EFFICIENT METHOD
OF CONSTRUCTING L1-TYPE NORM FEATURE TO ESTIMATE EUCLIDEANDISTANCE FOR FAST VECTOR QUANTIZATION,” Intelligent Automation and SoftComputing, Vol. 12, No.3, pp. 269-274, May 2006.

E1191 (F)ZHIBIN PAN, TADAHIRO OHMI, and KOJI KOTANI, “POST-PROCESSINGMETHOD FOR VECTOR QUANTIZATION TO ACHIEVE A HIGHER PSNR AND
NEARLY CONSTANT BIT RATE,” Intelligent Automation and Soft Computing, Vol.
12, No.3, pp. 275-282, May 2006.

E1192(C)Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa
Yamaha, Shigetoshi Sugawa and Tadahiro Ohmi, “Accurate Circuit Performance
Prediction Model and Lifetime Prediction Method of NBT Stressed Devices for Highly
Reliable ULSI Circuits,” 2006 International Conference on Integrated Circuit Design andTechnology, Invited Paper, pp.199-202, May 2006.

E1193(C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Fast Encoding Method for Vector
Quantization Based on Sorting Elements of Codewords to Adaptively Constructing
Subvectors,” 2006 IEEE International Symposium on Circuits and Systems (ISCAS2006),
pp. 4687-4690, May 2006.

E1194(F)

Hitoshi Morinaga, Kenji Shimaoka, and Tadahiro Ohmi, “Impact of Light on the Surface
Nanostructure of Silicon,” Journal of The Electrochemical Society Volume153, Number 7,pp.G626-631, May 2006.

E1195-1（C）

Yasuhiro Kawase, Masafumi Kitano, Hitoshi Morinaga, Yasuyuki Shirai and TadahiroOhmi, “An outgas free passivation technology for semiconductor vacuum chamber using
advanced anodic oxidation,” The 209th Electrochemical Society Meeting, No.317, May2006.

E1195-2 (P)Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Hitoshi Morinaga, Yasuyuki
Shirai and Tadahiro Ohmi, “An Outgas Free Passivation Technology for Semiconductor
Vacuum Chamber Using Advanced Anodic Oxidation,” Electrochemical SocietyTransactions Vol.9 No.2, pp.67-71, August 2007.

E1196(C)

Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro
Ohmi, “High Quality Gate Insulator Film Formation on SiC using by Microwave-Excited
High-Density Plasma,” 14th Workshop on Dielectrics in Microelectronics (WoDiM2006),
pp.111-112, June 2006.

E1197-1(W)Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro
Ohmi, “The Dependence of Remaining Carbon in the Electrical Property of the GateInsulator Film on SiC at Low Temperature Insulator Formation,” 2006 Asia-PacificWorkshop on Fundamental and Application of Advanced Semiconductor Devices,pp.155-159, July 2006.

E1197-2(W)Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, and TadahiroOhmi, “The Dependence of Remaining Carbon in the Electrical Property of the Gate
Insulator Film on SiC at Low Temperature Insulator Formation,” IEICE Technical Reporton Trans. Electron Devices, Vol. 106, No.137, ED2006-96, pp. 155-159, July 2006.

E1198-1(W)Masaaki Higuchi, Seiji Shinagawa, Akinobu Teramoto, Hiroshi Nohira, Takeo Hattori,Eiji Ikenaga, Shigetoshi Sugawa, Tadahiro Ohmi, “The dependence of the intermediate
nitridation states density at Si3N4/Si interface on surface Si atoms density,” 2006
Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor
Devices, pp.265-270, July 2006.

E1198-2(W)Masaaki Higuchi, Seiji Shinagawa, Akinobu Teramoto, Hiroshi Nohira, Takeo Hattori,
Eiji Ikenaga, Shigetoshi Sugawa, Tadahiro Ohmi, “The dependence of the intermediate
nitridation states density at Si3N4/Si interface on surface Si atoms density,” IEICE
Technical Report on Trans. Electron Devices, Vol. 106, No.137, ED2006-118, pp.
265-270, July 2006.

E1199-1(C)PHILIPPE GAUBERT, AKINOBU TERAMOTO, TATSUFUMI HAMADA,TOMOYUKI SUWA and TADAHIRO OHMI, “Accurate Extraction of Conduction
Parameters in MOSFETs on Si(110) surface,” 28th International Conference on thePhysics of Semiconductors, pp.243, July 2006.

E1199-2(P)P. GAUBERT, A. TERAMOTO, T. HAMADA, T. SUWA and T. OHMI, “Accurate
Extraction of Conduction Parameters in MOSFETs on Si(110) surface,” 28th International
Conference on the Physics of Semiconductors, pp.1393-1394, CD-ROM, July 2006.

E1200(C)Ichirou Takahashi, Tatsunori Isogai, Keita Azumi, Akinobu Teramoto, Shigetoshi
Sugawa, Tadahiro Ohmi, “Formation of Metal-Ferroelectric-Insulator-Si Structure Device
with Large Memory Window by Supplying Ion Bombardment Energy in Rf-Sputtering
Plasma,” 15th International Symposium on the Applications of Ferroelectrics, pp.242,
August 2006.

E1201 (F)Kazumasa Kawase, Tomoyuki Suwa, Masaaki Higuchi, Hiroshi Umeda, Masao Inoue,
Shimpei Tsujikawa, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa and Tadahiro
Ohmi, “Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface
Formed by Radical Nitridation,” Japanese Journal of Applied Physics Vol. 45, No. 8A, pp.
6203-6209, August 2006.

E1202(W)

Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Accurate Eye Detection Using
Elliptical Separabilty Filter,” Proceedings of The Eighth IASTED International
Conference on Signal and Image Processing (SIP 2006), 534-124, CD-ROM, August2006.

E1203(W)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Robust Video-shot-change
Detection by Adaptive-threshold Based on APIDQ Histogram Method,” Proceedings ofThe Eighth IASTED International Conference on Signal and Image Processing (SIP2006), 534-125, CD-ROM, August 2006.

E1204 (C)

Ichirou Takahashi, Kiyoshi Funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai,Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi,“Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2 byMicrowave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition,”
Extended Abstracts of the 2006 International Conference on SOLID STATE DEVICESand MATERALS, pp.124-125, September 2006.

E1205 (C)Tomoyuki Suwa, Hiroto Takahashi, Yuki Kumagai, Genya Fujita, Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Very Low Bit Error Rate in Flash Memory
using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation,” Extended
Abstracts of the 2006 International Conference on SOLID STATE DEVICES andMATERALS, pp.296-297, September 2006.

E1206 (C)

Masaaki Higuchi, Takashi Aratani, Tatsufumi Hamada, Akinobu Teramoto, TakeoHattori, Shigetoshi Sugawa, Tadahiro Ohmi, Seiji Shinagawa, Hiroshi Nohira, EijiIkenaga, Keisuke Kobayashi, “Electric characteristics of Si3N4 films formed by directly
radical nitridation on Si (110) and Si (100) surfaces,” Extended Abstracts of the 2006
International Conference on SOLID STATE DEVICES and MATERALS, pp.386-387,
September 2006.

E1207 (C)

Hiroshi Imai, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi, “Low Leakage
Current and Low Resistivity p+n Diodes on Si(110) Fabricated by Ga+/B+ Combination
I/I and Low Temperature Annealing,” Extended Abstracts of the 2006 International
Conference on SOLID STATE DEVICES and MATERALS, pp.454-455, September
2006.

E1208 (C)

Syunichi Watabe, Shigetoshi Sugawa, Akinobu Teramoto, and Tadahiro Ohmi, “A New
Statistical Evaluation Method for the Variation of MOSFETs,” Extended Abstracts of the2006 International Conference on SOLID STATE DEVICES and MATERALS,
pp.532-533, September 2006.

E1209 (C)Ichirou Takahashi, Tatsunori Isogai, Keita Azumi, Masaki Hirayama, Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Technology of Ferroelectric Thin Film
Formation with Large Coercive Field for Future Scaling Down ofFerroelectric Gate FETMemory Device,” Extended Abstracts of the 2006 International Conference on SOLID
STATE DEVICES and MATERALS, pp.554-555, September 2006.

E1210 (C)Toru Takeda, Kouji Tanaka, Masaki Saito, Yoshimichi Kato, Toshirou Tsumori, Herzl
Aharoni, and Tadahiro Ohmi, “Low temperature (300oC) growth ofcrystalline/non-crystalline thin Si films by a newly developed single shower dual injection
system employing microwave excited high density hydrogen plasma and silicon radicals
CVD process,” Extended Abstracts of the 2006 International Conference on SOLID
STATE DEVICES and MATERALS, pp.1096-1097, September 2006.

E1211 (C)Soji Fukuda, Tadahiro Ohmi, Shigetoshi Sugawa, “Development and Practial Applicationof High-sfficincy Fire Control System for the Clean Room,” International Symposium onSemiconductor Manufacturing (ISSM 2006), ES-254, pp.243-246, September 2006.

E1212 (C)S.Minobe, I.Terada, Y. Motoyoshi, H. Hanaoka, Y. Shirai, T. Ohmi, “A New Air
Cleaning and Cooling Instrument Using Oblique Honeycomb,” International Symposium
on Semiconductor Manufacturing (ISSM 2006), UC-157, pp.417-420, September 2006.

E1213-1(C)Hitoshi Morinaga, Kenji Shimaoka, and Tadahiro Ohmi, “Surface Microroughness ofSilicon in Wet Process and Its Minimization,” 8th International Symposium on Ultra
Clean Processing of Silicon Surfaces(UCPSS 2006), Abstract Book, pp. 18-19, September
2006.

E1213-2 (P)Hitoshi Morinaga, Kenji Shimaoka, and Tadahiro Ohmi, “Surface Microroughness ofSilicon in Wet Process and Its Minimization,” Solid State Phenomena, Vol.134, pp.45-48,
November 2007.

E1214 (F)

T.N.Minh, K.Ohishi, M.Tanaka, S.Hashimoto, K.Kosaka, H.Kubota, and T.Ohmi,“Continuous Path Tracking System of High Precision Stage Using Synchronous
Piezoelectronic Device Driver,” Advanced Materials Research Vol.11-12, pp.121-124,
October 2006.

E1215 (F)Ichirou Takahashi, Keita Azumi, Masaki Hirayama, Akinobu Teramoto, Shigetoshi
Sugawa and Tadahiro Ohmi, “Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device
with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-EffectTransistor,” Japanese Journal of Applied Physics Vol. 45, No. 9B, pp. 7336-7340,
October 2006.

E1216 (L)K.Hirose, M.Kihara, D.Kobayashi, H.Okamoto, S.Shinagawa, H.Nohira, E.Ikenaga,
M.Higuchi, A.Teramoto, S.Sugawa, T.Ohmi, and T.Hattori, “X-ray photoelectron
spectroscopy study of dielectric constant for Si compounds,” Applied Physics Letters 89
Number 15, 154103-1-154103-3, October 2006.

E1217 (F)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Comments on: Novel full-search schemes
for speeding up image coding using vector quantization,” Journal of Visual
Communication & Image Representation R.17, pp.573-580, October 2006.

E1218 (W)

W. Cheng, A. Teramoto, R. Kuroda, P. Gaubert, C. Tye, M. Hirayama, S. Sugawa and T.
Ohmi, “High Performance and Highly Reliable Novel CMOS Devices Using
Accumulation Mode Fully Depleted SOI MOSFETs,” Technical Report of IECE, Vol.106
No.277, SDM2006-188, pp.57-61, October 2006.

E1219(C)Weitao Cheng, Akinobu Teramoto, Philippe Gaubert, Masaki Hirayama and Tadahiro
Ohmi, “Impact of Improved Mobility and Low Flicker Noise MOS Transistors Using
Accumulation Mode Fully Depleted Silicon-on-Insulator Devices,” 2006 8th International
Conference on Solid-State and Integrated Circuit Technology Proceedings, Part 1 of 3,
pp.65-67, October 2006.

E1220(F)Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni,
Tadahiro Ohmi, “Thin SiON Film Grown at Low-Temperature (400 ℃ ) by
Microwave-Excited High-Density Kr/O2/N2 Plasma,” IEEE Transactions on Plasma
Science Vol.34 No.5, pp. 2443-2449, October 2006.

E1221(W)

Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, and Naoto Miyamoto, “RevolutionalProgress of Silicon Technologies Exhibiting Very High Speed Performance Over 50 Ghz
Clock Rate,” The 6 ｔ ｈ Taiwan-Japan Microelectronics International Symposium,November 2006.

E1222(C)

Md.Ashfaquzzaman Khan, Naoto Miyamoto, Roel Pantonial, Koji Kotani, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Improving Multi-Context Execution Speed on DRFPGAs,”IEEE Asian Solid-State Circuits Conference (A-SSCC) 2006, pp.275-278, November
2006.

E1223(C)

Kazumasa Kawase, Masaaki Higuchi,Tomoyuki Suwa, Hiroshi Umeda, Masao Inoue,
Akinobu Teramoto, Takeo Hattrori, Shigetoshi Sugawa, and Tadahiro Ohmi, “RadicalOxidation on Ultra Pure Silicon Surface,” 210th Meeting of The Electrochemical Society,pp. 973, November 2006.

E1224(F)Ichirou Takahashi, Hiroyuki Sakurai, Tatsufumi Isogai, Akinobu Teramoto, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Low Voltage 3V Operation of Ferroelectronics
Multi-Layer Stack MFIS Structure Device Formed by Plasma Physical Vapor Deposition
and Oxygen Radical Treatment,” Integrated Ferroelectronics, Vol.81, No.1, pp.47-55,
November 2006.

E1225(C)

Masaaki Higuchi, Tomoyuki Suwa, Takashi Aratani, Tatsufumi Hamada, Akinobu
Teramoto, Takeo Hattori, Shigetoshi Sugawa, Tadahiro Ohmi, Seiji Shinagawa, Hiroshi
Nohira, Eiji Ikenaga, “Electric and interface characteristics of Si3N4 films formed bydirectly radical NH on Si (110) and Si (100) surfaces,” 37th IEEE Semiconductor Interface
Specialists Conference, pp.13, December 2006.

E1226(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Face Recognition Using
Codebook designed by Code Classification,” The first IEEE International Conference onSignal and Image Processing – 2006, pp.397-401, December 2006.

E1227(C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Shot Change Detection Using
Adjacent Pixel Intensity Difference Quantization Histogram Method in MPEG
Compressed Video,” The first IEEE International Conference on Signal and Image
Processing – 2006, pp.637-642, December 2006.

E1228(C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Constructing Better Partial Sums Based on
Energy-Maximum Criterion for Fast Encoding of VQ,” Proceedings of 2006 IEEE Asia
Pacific Conference on Circuits and Systems, pp.1565-1568, December 2006.

E1229 (F)Zhibin PAN, Koji KOTANI, and Tadahiro OHMI, “Subvector-Based Fast Encoding
Method for Vector Quantization Without Using Two Partoial Variances,” OPTICALREVIEW Vol.13. No.6 (2006), pp.410-416, November /December 2006.