Prof. Ohmi's Paper
January－December, 1997
E690(F)

Herzl Aharoni, Tadahiro Ohmi, Mauricio Massazumi Oka, Akira Nakada,
and Yukio Tamai, “Analysis of n+p Silicon Junctions with Varying
Substrate Doping Concentrations Made under Ultraclean Processing
Technology,” J. Appl. Phys., Vol. 81, No. 3, pp. 1270-1288, February 1997.

E691(C)

Tadashi Shibata, Akira Nakada, Masahiro Konda, Tatsuo Morimoto,
Tadahiro Ohmi, Hiroyuki Akutsu, Akinobu Kawamura, and Kyoji Marumoto,“A Fully-Parallel Vector Quantization Processor for Real-Time Motion
Picture Compression,” IEEE 1997 International Solid-State Circuits
Conference, Digest of Technical Papers, pp.270-271, February 1997.

E692(C)Yo Sakata, Rochdi Messoussi, Mizuho Morita, and Tadahiro Ohmi, “Impactof Total Room Temperature Wet Cleaning on Very Thin Oxide Film,” 1997
Semiconductor Pure Water and Chemicals Conference, Proceedings, Vol.2,
Santa Clara, pp.131-141, March 1997.

E693(C)

Tadahiro Ohmi, “Wafer Cleaning, Stripping & Surface Preparation,” 1997
Semiconductor Pure Water and Chemicals: Semiconductor IC Materials
Issues and Limitations for Future Processing, March 1997.

E694(F)

Akira Nakada, Kei Kanemoto, Mauricio Massazumi Oka, Yukio Tamai, andTadahiro Ohmi, “Influence of Fluorine in BF2+ Implantation of Ultrashallow
and Low-leakage Silicon p+n Junctions by 450-500℃ Annealing,” J. Appl.
Phys., Vol. 81, No. 6, pp.2560-2565, March 1997.

E695-1(C)Wonseo Park, Yongho H. Jang, Motonobu Takeya, Gangsoo Jong, andTadahiro Ohmi, “Growth of Polycrystalline Silicon at Low Temperature on
Hydrogenated Microrystalline Silicon (μc-Si:H) Seed Layer,” Abstract,
MRS 1997 Spring Meeting, Materials Research Society, pp.32-33, San
Francisco, March-April, 1997.

E695-2(P)

W.S.Park, Y.H.Jang, M.Takeya, G.S.Jong, and T.Ohmi, “Growth of
Polycrystalline Silicon at Low Temperature on HydrogenatedMicrorystalline Silicon( μ c-Si:H) Seed Layer,” MRS Symposium
Proceeding – Amorphous and Microcrystalline Sillicon Technology, Edited
by S.Wagner, M.Hack, E.Schropp, and I.Shimizu, Vol.467, Materials
Research Society, pp.403-408, Pittsburgh, PA, August 1997.

E696-1(C)Tadahiro Ohmi, and Masayuki Toda, “Megasonic Irradiation Included
Chemical Reactions in Solution for Silicon Wafer Cleaning,” Abstract, MRS
1997 Spring Meeting, Materials Research Society, invited, pp.272, San
Francisco, March-April 1997.

E696-2 (P)T.OHMI, M.TODA, M.KATOH, K.KAWADA, and H.MORITA,“Megasonic Irradiation Induced Chemical Reaction in the Solution for
Silicon Wafer Cleaning,” MRS Symposium Proceeding – Science andTechnology of Semiconductor Surface Preparation, Edited by G.Higashi,
M.Hirose, S.Raghavan, S.Verhaverbeke, Vol.477, Material Research Society,pp.3-14, Warrendale, PA, October 1997.

E697-1(C)Jong-Soo Kim, Hiroshi Morita, Jae-Dong Joo, and Tadahiro Ohmi, “Studyon Cu Cleaning Efficacy Depending on Initial Contamination Method,”
Abstract, MRS 1997 Spring Meeting, Materials Research Society, pp.278,
San Francisco, March-April 1997.

E697-2 (P)J.S.Kim, H.Morita, J.D.Joo, and T.Ohmi, “Study on Cu Cleaning Efficacy
Depending on Initial Contamination Method,” MRS Symposium Proceeding– Science and Technology of Semiconductor Surface Preparation, Edited by
G.Higashi, M.Hirose, S.Raghavan, S.Verhaverbeke, Vol.477, Material
Research Society, pp.259-265, Warrendale, PA, October 1997.

E698-1(C)Geun-Min Choi, Katsuyuki Sekine, Hiroshi Morita, and Tadahiro Ohmi,“The Effect of Substrate Condition and Contamination Solution on the
Growth of Copper Particles,” Abstract, MRS 1997 Spring Meeting, Materials
Research Society, pp.279, San Francisco, March-April 1997.

E698-2 (P)Gurn-Min CHOI, Katsuyuki SEKINE, Hiroshi MORITA, and Tadahiro
OHMI, “The Effect of Contamination Solutions and Substrate Conditions on
Copper Particle Growth Behavior,” MRS Symposium Proceeding – Scienceand Technology of Semiconductor Surface Preparation, Edited by G.Higashi,
M.Hirose, S.Raghavan, S.Verhaverbeke, Vol.477, Material Research Society,pp.275-280, Warrendale, PA, October 1997.

E699-1(C)Katsuyuki Sekine, Geun-Min Choi, and Tadahiro Ohmi, “Growing Behaviorof native Oxide on Si Surface with Various Resistivity in UPW and Cu
Contaminated UPW,” Abstract, MRS 1997 Spring Meeting, Materials
Research Society, pp.284, San Francisco, March-April 1997.

E699-2 (P)Katsuyuki SEKINE, Geun-Min CHOI, Yuji SAITO, and Tadahiro OHMI,“Native Oxide Growth Behavior on Si Surface with Various Resistivity in
Ultrapure Water and CuF2 Solution,” MRS Symposium Proceeding –Science and Technology of Semiconductor Surface Preparation, Edited by
G.Higashi, M.Hirose, S.Raghavan, S.Verhaverbeke, Vol.477, Material
Research Society, pp.427-431, Warrendale, PA, October 1997.

E700 (F)Senri Ojima, Kazuki Kubo, Masayuki Kato, Masayuki Toda, and Tadahiro
Ohmi, “Megasonic Excited Ozonized Water for the Cleaning of Silicon
Wafers,” Journal of Electrochemical Society, Vol.144, No. 4, pp. 1482-1487,
April 1997.

E701-1(C)Tadahiro Ohmi, “Revolution of Silicon Substrate Surface Cleaning,”
Extended Abstracts, 191st Electrochemial Society Meeting, Montreal,
Abstract No. 582, p.750, invited, Qubec, Canada, May 1997.

E701-2 (P)Tadahiro Ohmi, “Revolution of Silicon Substrate Surface Cleaning,” ULSI
Science and Technology 1997, Edited by H. Z. Massoud, H. Iwai, C.Claeys,
and R. B. Fair, PV97-3, The Elelctrochemical Society, Pennington, NJ, pp.
197-198, 1997.

E702-1(C)J. S. Kim, H. Morita, J. D. Joo, and T. Ohmi, “The Dependence of Cu
Removal Efficiency on the Initial Cu Concentration of Si Surface,” Extended
Abstracts, 191st Electrochemial Society Meeting, Montreal, Abstract No.
583, p.751, Qubec, Canada, May 1997.

E702-2 (P)J. S. Kim, H. Morita, J. D. Joo, and T. Ohmi, “The Dependence of Cu
Removal Efficiency on the Initial Cu Concentration of Si Surface,” ULSI
Science and Technology 1997, Edited by H. Z. Massoud, H. Iwai, C.Claeys,
and R. B. Fair, PV97-3, The Elelctrochemical Society, Pennington, NJ, pp.
199-210, 1997.

E703-1(C)Katsuyuki SEKINE, Geun-Min CHOI, Hiroshi MORITA, and Tadahiro
OHMI, “The Removal Efficiency of Copper impurity on Various Si
Surfaces,” Extended Abstracts, 191st Electrochemial Society Meeting,Montreal, Abstract No. 584, pp.753-754, Qubec, Canada, May 1997.

E703-2 (P)Katsuyuki SEKINE, Geun-Min CHOI, Hiroshi MORITA, and Tadahiro
OHMI, “The Removal Efficiency of Copper impurity on Various Si
Surfaces,” ULSI Science and Technology 1997, Edited by H. Z. Massoud, H.
Iwai, C.Claeys, and R. B. Fair, PV97-3, The Elelctrochemical Society,
Pennington, NJ, pp. 211-217, 1997.

E704-1(C)Y. Tamai, M. M. Oka, A. Nakata, T. Shibata, and T. Ohmi, “Residual
end-of-range damage reducion in low-temperature-annealed ion-implanted
junctions by using low-droped silicon substrate,” Extended Abstracts, 191st
Electrochemial Society Meeting, Montreal, Abstract No. 619, p.811, Qubec,
Canada, May 1997.

E704-2 (P)Y. Tamai, M. M. Oka, A. Nakata, T. Shibata, and T. Ohmi, “Residual
End-of-range Damage Reducion in Low-temperature-annealed Ion-implanted
Junctions by Using Low-droped Silicon Substrate,” ULSI Science andTechnology 1997, Edited by H. Z. Massoud, H. Iwai, C.Claeys, and R. B.
Fair, PV97-3, The Elelctrochemical Society, Pennington, NJ, pp. 643-654,
1997.

E705 (F)Tsutomu Nakai, Tadashi Shibata, and Tadahiro Ohmi, “Neuron-MOS Parllel
Search Hardware for Real-Time Signal Processing,” 1st Analog VLSI
Workshop Proceedings, pp.65-70, Columbus, Ohaio, May 1997.

E706 (F)Ning Mei Yu, Tadashi Shibata, and Tadahiro Ohmi, “Neuron MOS
Analog/Degital Merged Circuit Technology for Center-Of-Mass Tracker
Circuit,” 1st Analog VLSI Workshop Proceedings, pp.71-76, Columbus,
Ohaio, May 1997.

E707(C)

Masaki Hirayama, Tadahiro Ohmi, Tetsuya Yamamoto, Makoto Ando, andNaohisa Goto, “High Density Microwave Plasma Source without Magnetic
Field for Large Area PECVD and Plasma Oxidation,” Abstract, 10th
symposium on Plasma Science for Materials, Abstract No.A3-6, p.46, Tokyo,
June 1997.

E708(C)

Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi, “CMOS Charge-transfer
Preamplifier for Offset-Fluctuation Cancellation in Low-Power, High–Accuracy Comparators,” Digest of Technical Papers, 1997 Symposium on
VLSI Circuits, pp.21-22, Kyoto, June 1997.

E709 (F)Tadahiro OHMI and Tadashi SHIBATA, “Functionality Enhancement inElemental Devices for Implementing Intelligence on Integrated Circuits,”
IEICE Trans. Electron, Vol.E80-C, No.7, invited paper, pp.841-848, July
1997.

E710 (F)Ho-Yup KWON, Koji KOTANI, Tadashi SHIBATA, and Tadahiro OHMI,“Low Power Neuron-MOS Technology for High-Functionality Logic Gate
Synthesis,” IEICE Trans. Electron, Vol.E80-C, No.7, pp.924-930, July 1997.

E711(C)

Tadahiro Ohmi, “Realizing Contamination Free-Facilities & Processes,(Wafer Surface Preparetion)” Cleanrooms Asia ’97, invited, Singapore, July
1997.

E712(C)Ryu Kaihara, Masaki Hirayama, Mizuho Morita, and Tadahiro Ohmi, “Low
Temperature Thin Oxide Film Formation by Microwave Excitation
High-Density Plasma Direct Oxidation,” Extended abstracts, The 1997 Joint
International Meeting(192nd Electrochemical society Meeting and 48th
International Society of Electrochemistry Annual Meeting), Abstract
No.1566, Vol.97-2, pp.1800-1801, Paris, August-September 1997.

E713(C)

Masaki Hirayama and Tadahiro Ohmi, “High Density Plasma Source Using
8.3 GHz Microwave for Large Area PECVD and Plasma Oxidation,”
Extended abstracts, The 1997 Joint International Meeting(192nd
Electrochemical Society Meeting and 48th International Society ofElectrochemistry Annual Meeting), Abstract No.1567, Vol.97-2,
pp.1802-1803, Paris, August-September 1997.

E714-1(C)J.D.Joo, J.S.Kim, H.Morita, and T.Ohmi, “Comparison of Cleaning
Efficiencies of Noble Metals on Si Surface between O3-UPW and SPM,”
Extended abstracts, The 1997 Joint International Meeting(192nd
Electrochemical Society Meeting and 48th International Society ofElectrochemistry Annual Meeting), Abstract No.1891, Vol.97-2,
pp.2174-2175, Paris, August-September 1997.

E714-2 (P)Jae-dong Joo, Jong-Soo Kim, Hiroshi Morita, and Tadahiro Ohmi,“Comparison of Cleaning Efficiencies of Noble Metals on Si surface
Between O3-UPW and SPM,” Proceedings of The Fifth International
Symposium, Cleaning Technology in Semiconductor Device Manufacturing,
Edited by J.Ruzyllo, R.E.Novak, C.M.Appel, T.Hattori, and M.Heyns,
PV97-35, The Electrochemical Society, Pennington, NJ, pp.280-288, 1997.

E715-1(C)

J.S.Kim, H.Morita, J.D.Joo, and T.Ohmi, “The Effect of Surface Damage
due to Si Implantation on Adsorption and Desorption of Cu on Si Surface,”
Extended abstracts, The 1997 Joint International Meeting(192nd
Electrochemical Society Meeting and 48th International Society ofElectrochemistry Annual Meeting), Abstract No.1895, Vol.97-2, pp. 2181,
Paris, August-September 1997.

E715-2 (P)Jong-Soo Kim, Hiroshi Morita, Jae-Dong Joo, and Tadahiro Ohmi, “The
Effect of Surface Damage due to Si Implantation on Adsorption andDesorption of Cu on Si Surface,” Proceedings of The Fifth International
Symposium, Cleaning Technology in Semiconductor Device Manufacturing,
Edited by J.Ruzyllo, R.E.Novak, C.M.Appel, T.Hattori, and M.Heyns,
PV97-35, The Electrochemical Society, Pennington, NJ, pp.151-158, 1997.

E716-1(C)Kazuhiko Kawada, Mitsunori Nakamori, Hiroshi Morita, Tadahisa Nitta, andTadahiro Ohmi, “Particles and Metallic Impurities Removal by Using New
Spin Cleaner Based on UCT Cleaning Concept,” Extended abstracts, The
1997 Joint International Meeting(192nd Electrochemical Society Meetingand 48th International Society of Electrochemistry Annual Meeting),
Abstract No.1923, Vol.97-2, pp.2220-2221, Paris, August-September 1997.

E716-2(P)Kazuhiko Kawada, Mitsunori Nakamori, Hiroshi Morita, Shoichi Okano,Tadahisa Nitta, and Tadahiro Ohmi, “Particles and Metallic Impurities
Removal by Using New Spin Cleaner Based on UCT Cleaning Concept,”
Proceedings of The Fifth International Symposium, Cleaning Technology in
Semiconductor Device Manufacturing, Edited by J.Ruzyllo, R.E.Novak,
C.M.Appel, T.Hattori, and M.Heyns, PV97-35, The Electrochemical Society,
Pennington, NJ, pp.528-535, 1997.

E717-1(C)

Hiroshi Morita, Jae-Dong Joo, Rochdi Messoussi, Kazuhiko Kawada,
Jong-soo Kim, and Tadahiro Ohmi, “Pasivation of Cu Particles on Si
Substrate by FOM (HF+O3-UPW) Solution,” Extended abstracts, The 1997
Joint International Meeting(192nd Electrochemical Society Meeting and48th International Society of Electrochemistry Annual Meeting), Abstract
No.1930, Vol.97-2, pp.2230-2231, Paris, August-September 1997.

E717-2 (P)HIROSHI MORITA, JAE-DONG JOO, ROCHIDI MESSOUSSI,KAZUHIKO KAWADA, JONG-SOO KIM, and TADAHIRO OHMI,“Pasivation of Cu Particles on Si Substrate by FOM (HF+O3-UPW)
Solution,” Proceedings of The Fifth International Symposium, Cleaning
Technology in Semiconductor Device Manufacturing, Edited by J.Ruzyllo,
R.E.Novak, C.M.Appel, T.Hattori, and M.Heyns, PV97-35, The
Electrochemical Society, Pennington, NJ, pp.143-150, 1997.

E718(C)

Shunichi Omae, Takayuki Jizaimaru, Senri Ojima, and Tadahiro Ohmi,“Room Temperature Photoresist Residual Removal Process by Using
KF/H2O2/H2O,” Extended abstracts, The 1997 Joint International
Meeting(192nd Electrochemical Society Meeting and 48th International
Society of Electrochemistry Annual Meeting), Abstract No.1935, Vol.97-2,
pp.2238-2239, Paris, August-September 1997.

E719 (F)

Takeo Ushiki, Mo-Chiun Yu, Yuichi Hirano, Hisayuki Shimada, Mizuho
Morita, and Tadahiro Ohmi, “Reliable Tantalum-Gate Fully-Depleted-SOI
MOSFET Technology Featuring Low-Temperature Processing,” IEEE Trans.
on Electron Devices, Vol.44, No.9, pp.1467-1472, September 1997.

E720 (F)

J.S.Kim, H.Morita, J.D.Joo, and T.Ohmi, “The Role of Metal Induced
Oxidation for Copper Deposition on Silicon Surface,” Journal of The
Electrochemical Society, Vol.144, No.9, pp.3275-3283, September 1997.

E721(C)Kei Kanemoto, Akira Nakada, and Tadahiro Ohmi, “Reduction of
BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow
Source/Drain Junction Formation below 600℃,”Extended abstract of the1997 International Conference on SOLID STATE DEVICES and
MATERALS, pp.112-113, Hamamatsu, September 1997.

E722(C)Kazuhide Ino, Yoshiyuki Taniguchi, and Tadahiro Ohmi, “Formation of
Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by
Low-Temperature Si-Encapsulated Silicidation Process,” Extended abstractof the 1997 International Conference on SOLID STATE DEVICES and
MATERALS, pp.122-123, Hamamatsu, September 1997.

E723(C)

Hiroyuki Komeda, Tohru Ueda, Sadae Wada, and Tadahiro Ohmi,“Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio
Fluorocarbon Plasma during Contact Hole Etching,” Extended abstract of the1997 International Conference on SOLID STATE DEVICES and
MATERALS, pp.448-449, Hamamatsu, September 1997.

E724(C)

H.Kumami, W.Shindo, K.Ino, and T.Ohmi, “Enhancement of Silicon
Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion
Bombardment Process,” Extended abstract of the 1997 International
Conference on SOLID STATE DEVICES and MATERALS, pp.462-463,
Hamamatsu, September 1997.

E725(C)

Tadashi Shibata and Tadahiro Ohmi, “New Development in Four-Terminal
Device Concept,” Proceedings, 21st International Conference on
Microelectronics (MIEL97), Vol.1, pp.31-32, invited, Yugoslavia,
September 1997.

E726(C)

Ning Mei Yu, Tadashi Shibata, and Tadahiro Ohmi, “An Analog Fuzzy
Processor Using Neuron-MOS Center-of-Mass Detector,” Proceeding of the
6th International Conference on Microelectronics for Neural Networks,
Evoluationary & Fuzzy Systems (Micro Neuro ’97), pp.121-128, Dresden,
Germany, September 1997.

E727(C)

Masahiro Konda, Tadashi Shibata, and Tadahiro Ohmi, “A Compact
Memory-Merged Matching Cell for Neuron-MOS Association Processor,”
Proceeding of the 6th International Conference on Microelectronics for
Neural Networks, Evoluationary & Fuzzy Systems (Micro Neuro ’97),
pp.174-180, Dresden, Germany, September 1997.

E728(C)

Keng Hoong Wee, Tadashi Shibata, and Tadahiro Ohmi, “A Simple
Random Noise Generator Employing Anti-Miller Effect of CMOS Source
Follower,” Proceeding of the 6th International Conference on
Microelectronics for Neural Networks, Evoluationary & Fuzzy Systems(Micro Neuro ’97), pp.181-188, Dresden, Germany, September 1997.

E729 (F)Kazuhide Ino, Toshikuni Shinohara, Takeo Ushiki, and Tadahiro Ohmi, “Ionenergy, ion flux, and ion species effects on crystallographic and electricalproperties of sputter-deposited Ta thin films,” Journal of Vacuum Science &Technology A, Vol.15, No.5, pp.2627-2635, September/October 1997.

E730(C)

Shouichi Okano, Kazuhiko Kawada, Mitsunori Nakamori, Tadahisa Nitta,
and Tadahiro Ohmi, “New Spin Cleaner with Megasonic for Single Wafer
Processing Based on UCT Cleaning Concept,” 1997 IEEE International
Symposium on Semiconductor Manufacturing Conference, ISSM’97
Proceeding, pp. E9-12, San Francisco, October 1997.

E731(C)Kazuyuki Maruo, Takahiro Yamaguchi, Masayoshi Ichikawa, Tadashi
Shibata, and Tadahiro Ohmi, “Automatic Defects Separation From
Background LSI Patterns Using Advanced Image Processing Techniques,”
1997 IEEE International Symposium on Semiconductor Manufacturing
Conference, ISSM’97 Proceeding, pp.E61-64, San Francisco, October 1997.

E732 (M)

T.Ohmi and T.Shibata, “Intelligence Implementation on Silicon Based on
Four-Terminal Device Electronics,” Microelectron.Reliav., Vol.37, No.9.
pp.1315-1328, (1995 Elsevier Science Ltd.), 1997.

E733 (F)

Mahito Shinohara, Shigetoshi Sugawa, Yoshio Nakamura, and Tadahiro
Ohmi, “A Bipolar Image Detector with Smart Functions,” IEEE Trans.
Electron Devices, Vol.44, No.10, pp.1769-1776, October 1997.

E734(C)

Tadahiro Ohmi, “Ultra Clean Society’s Activities for Manufacturing Scienceand Technology,” Abstract, AVS 44th National Symposium, pp.6, San Jose,
invited, October 1997.

E735(C)

N.Ikeda, Y.Shirai, M.Yamaji, Y.Minami, and T.Ohmi, “Integrated Compact
Gas Delivery System,” Abstract, AVS 44th National Symposium, pp.7, San
Jose, October 1997.

E736(C)

K.Ino,
K.Sekine,
T.Shibata,andT.Ohmi,“SuppressionofImpurity-Backdiffusion in Vacuum Pumping Systems for Ultraclean
Low-Pressure Semiconductor Processing,” Abstract, AVS 44th National
Symposium, pp.7, San Jose, October 1997.

E737(C)M.Hirayama and T.Ohmi, “High Density Microwave Plasma Source without
Magnetic Field for Large Area PECVD and Plasma Oxidation,” Abstract,
AVS 44th National Symposium, pp.7, San Jose, October 1997.

E738(C)

T.Iwamoto, A.Morimoto, K.Kawada, and T.Ohmi, “Highly-reliable Ultra
Thin Gate Oxide Formation by Employing a New Water Vapor Generator,”
Abstract, AVS 44th National Symposium, pp.7-8, San Jose, October 1997.

E739(C)

M.Takeya, W.S.Park, G.S.Jong, and T.Ohmi, “Plasma Conditions for theas-grown Low Temperature Poly-Si Formation on the SiO2 Substrate by a
Sputtering and PECVD Processes,” Abstract, AVS 44th National
Symposium, pp.18, San Jose, October 1997.

E740(C)

Tadahiro OHMI and Masaki HIRAYAMA, “Proposal of Novel High Density
Plasma for RIE, Sputtering and PECVD,” Proceedings of the FourthInternational Conference on Materials and Process Characterization for VLSI,
1997(ICMPC’97), pp.159-166, Shanghai, invited, November 1997.

E741(F)

Hisayuki Shimada, Yuichi Hirano, Takeo Ushiki, Kazuhide Ino, andTadahiro Ohmi, “Tantalum-Gate Thin-Film SOI nMOS and pMOS for
Low-Power Applications,” IEEE Trans. Electron Devices, Vol.44, No.11,
pp.1903-1907, November 1997.

E742 (F)

Y.H.Jang, W.S.Park M.Takeya, G.S.Jong, and T.Ohmi, “Low-Temperature
Polycrystalline Silicon Deposition by Very High Frequency Sputtering Using
Ar and H2” Journal of the Electrochemical Society, Vol.144, No.11,
pp.3973-3978, November 1997.

E743(F)SENRI OJIMA, TAKAYUKI JIZAIMARU, SHUNKITI OMAE, andTADAHIRO OHMI, “Room Temperature Photoresist Stripper,” Journal of
the Electrochemical Society, Vol.144, No.11, pp.4005-4018, November
1997.

E744 (F)Tadahiro Ohmi, “Surface Chemical Electronics at the Semiconductor
Surface,” Applied Surface Science, Vol.121/122, pp. 44-62, November 1997.

E745 (C)Tadahiro Ohmi and Masaki Hirayama, “High-Density Plasma Process forLarge-Diameter Wafer,” The Symposium for the 20th Anniversary of the145th Committee on Processing and Characterization of Crystals of JSPS,
Extended Abstracts, pp. 54-60, November 1997.

E746 (M)Tadahiro Ohmi, “Integrating Intelligence on Silicon electronic Systems. An
Inter-University Cooperative Research Project for Innovative Process,Device, Circuit, and System technologies,” Computers Elect. Engng, Vol. 23,
No. 6, pp. 371-379, (1998 Elsevier Science Ltd.), November 1997.

E747 (M)T. Shibata, Y. Yamashita, M. Konda, T. Morimoto, and T. Ohmi, “Event
Recognition Hardware Based on Neuron MOS Soft-Computing Circuits,”
Computers Elect. Engng, Vol. 23, No. 6, pp. 415-429, (1998 Elsevier
Science Ltd.), November 1997.

E748(W)

Masaki Hirayama and Tadahiro Ohmi, “Plasma Process Technology forLarge-Diameter Wafer(1)”, the 8th Microelectronics Conference Proceeding,
pp.5-11, November 1997.

E749 (W)

H.Kumami, W. Shindo, and T.Ohmi, “Low Temperature Silicon Epitaxy ina Low Energy Ion Bombardment Process,” the 8th Microelectronics
Conference Proceeding, pp.99-100, November 1997.

E750 (M)Tadahiro Ohmi, “New Era of Semiconductor Manufacturing (I) Proposal ofvery compact manufacturing system for 300mm wafer from Tohoku
University,” Ultra Clean Technology, Vol. 9, Supplement 1, December 1997.

E751 (M)Nobuhiro Miki and Tadahiro Ohmi, “New Era of Semiconductor
Manufacturing (II) -Proposal of Zero Emission Semiconductor Fab.
Operation-‘Fluorine Circulation’,” Ultra Clean Technology, Vol.9,
Supplement 2, December 1997.

E752 (C)

Tadashi Shibata and Tadahiro Ohmi, “Neural Microelectronics,”
International Electron Devices Meeting 1997, pp. 337-342, Washington, DC,
December 1997.