Prof. Ohmi's Paper
January－December, 2010
E1430(C)Naoto Miyamoto and Tadahiro Ohmi, “Temporal Circuit Partitioning for a 90nm CMOS
Multi-Context FPGA and its Delay Measurement,” 15th Asia and South Pacific Design
Automation Conference(ASP-DAC 2010), pp.373-374, 4D-17, CD-ROM, Taipei, January2010.

E1431(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Fearture Facial Image Recognition
Using VQ Histogram in the DCT Domain,” Second International Conference on Digital
Image Processing , 75460J-1－J-7, Singapore, February 2010.

E1432(C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Fast and Efficient Search for
MPEG-4 Video Using Adjacent Pixel Intensity Difference Quantization Histogram Feature,”
Second International Conference on Digital Image Processing , 75460K-1－K-6, Singapore,February 2010.

E1433 (F)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, "A Codebook Design Method for
Robust VQ-based Face Recognition Algorithm", Journal of Software Engineering andApplications, Vol. 3, No. 2, pp. 119-124, February 2010.

E1434(C)

Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda,
Shigetoshi Sugawa, Akinobu Teramoto, and Tadahiro Ohmi, “A Test Structure for
Statistical Evaluation of pn Junction Leakage Current Based on CMOS Image Sensor
Technology,” 2010 IEEE International Conference on Microelectronic Test Structures,pp.18-22, Hiroshima, March 2010.

E1435(C)Xun Gu, Takenao Nemoto, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi,“Optimization of Brush Scrubbing Condition on Cu/low-k Damascene Structure by Using
Pressure Sensing Sheet,” 2010 The Japan Society for Precision Engineering Spring Meeting,
pp.715-716, Saitama, March 2010.

E1436 (F)

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Masaki Hirayama, Akinobu
Teramoto, Shin Saito, Migaku Takahashi, and Tadahiro Ohmi, “Characterization of MgZnO
films grown by plasma enhanced metal-organic chemical vapor deposition,” Thin SolidFilms, Vol.518 Issue 11, 2953-2956, March 2010.

E1437 (F)

Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa,and Tadahiro Ohmi, “Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrierfor High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors,” Japanese
Journal of Applied Physics, Vol.49, No.4, Issue 2 of 2, 04DA03, April 2010.

E1438 (F)

Takafumi Fujisawa, Kenichi Abe, Shunichi Watabe, Naoto Miyamoto, Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Analysis of Hundreds of Time Constant Ratios
and Amplitudes of Random Telegraph Signal with Very Large Scale Array Test Pattern,”
Japanese Journal of Applied Physics, Vol.49, No.4, Issue 2 of 2, 04DC06, April 2010.

E1439 (F)

Kenichi Abe, Akinobu Teramoto, Shunichi Watabe, Takafumi Fujisawa, Shigetoshi Sugawa,Yutaka Kamata, Katsuhiko Shibusawa, and Tadahiro Ohmi, “Experimental Investigation ofEffect of Channel Doping Concentration on Random Telegraph Signal Noise,” Japanese
Journal of Applied Physics, Vol.49, No.4, Issue 2 of 2, 04DC07, April 2010.

E1440 (F)

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Tetsuya Goto, Masaki Hirayama,
Akinobu Teramoto, and Tadahiro Ohmi, “Light-Emitting Diode Based on ZnO by
Plasma-Enhanced Metal–Organic Chemical Vapor Deposition Employing Microwave
Excited Plasma,” Japanese Journal of Applied Physics, Vol.49, No.4, Issue 2 of 2, 04DG14,April 2010.

Prof. Ohmi’s Paper

E1441 (L)T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T.
Muro, T. Kinoshita, T. Ohmi, and T. Hattori, “Crystallographic orientation dependence ofcompositional transition and valence band offset at SiO2/Si interface formed using oxygen
radicals,” Journal of Applied Physics Letters, Vol.96, No.17, 173103, April 2010.

E1442 (B)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Face Recognition Using
Self-Organizing Maps,” Self-Organizing Maps, Edited by George K. Matsopoulos, pp.
277-288, April 2010.

E1443-1(C)Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi, “Impact ofwork function optimized S/D silicide contact for high current drivability CMOS,” 217th
Meeting of The Electrochemical Society, Abs.0949, CD-ROM, Vancouver, May 2010.

E1443-2(P)Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa, T. Ohmi, “Impact ofＷork Function Optimized S/D Silicide Contact for High Current Drivability CMOS,” ECSTransactions, Vol.28, No.1 Advanced Gate Stack, Source/Drain, and Channel Engineering
for Si-Based CMOS 6: New Materials, Processes, and Equipment, pp.315-324, May 2010.

E1444-1(C)X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa, and T. Ohmi, “Atomically Flattening
Technology at 850 ˚C for Si(100) Surface,” 217th Meeting of The Electrochemical Society,Abs.0951, CD-ROM, Vancouver, May 2010.

E1444-2 (P)X. Li, T. Suwa, A. Teramoto, R. Kuroda, S. Sugawa, and T. Ohmi, “Atomically Flattening
Technology at 850 ˚C for Si(100) Surface,” ECS Transactions, Vol.28, No.1 Advanced Gate
Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials,
Processes, and Equipment, pp.299-309, May 2010.

E1445(C)Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Masafumi Kitano, Yasuyuki Shirai andTadahiro Ohmi “Decomposition Characteristics of Metal-organic Materials of Ga doped
Zinc Oxide for Evaluation as MOCVD Precursor,” 217th Meeting of The Electrochemical
Society, Abs.0970, CD-ROM, Vancouver, May 2010.

E1446(C)Tetsuya Goto, Osamu Kawashima, and Tadahiro Ohmi “Adhesive Copper Seed Layer
Formation as an Alternative to Electroless Deposition for Printed Wiring Board Fabrications
by Rotation Magnet Sputtering,” International Conference on Electronics Packaging 2010,
TC3-1, CD-ROM, Sapporo, May 2010.

E1447(C)

Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda,
Shigetoshi Sugawa, Akinobu Teramoto, and Tadahiro Ohmi “Statistical Evaluation ofDynamic Junction Leakage Current Fluctutation Using a Simple Arrayed Capacitors
Circuit,” 2010 IEEE International Reliability Physics Symposium, 5F.2, pp.683-688,
CD-ROM, Anaheim, May 2010.

E1448(F)Yuji Saito, Katsuyuki Sekine, Ryu Kaihara, Masaki Hirayama, Shigetoshi Sugawa, Herzl
Aharoni and Tadahiro Ohmi, “The Growth of Thin Silicon Oxide and Silicon Nitride Films
at Low Temperature (400˚C) and High Growth Rates for Semiconductor Device Fabrication
by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma
System,” IEEE Transactions on Semiconductor Manufacturing, Vol.23, No.2, pp.328-339
May 2010.

E1449(F)Yasa Sampumo, Xun Gu, Takenao Nemoto, Yun Zhuang, Akinobu Teramoto, Ara
Philipossian, and Tadahiro Ohmi, “End-Point Detection of Ta/TaN Chemical Mechanical
Planarization via Forces Analysis,” Japanese Journal of Applied Physics, Vol.49, No.5,
Issue 3 of 3, 05FC01, May 2010.

E1450(F)

Shunichi Watabe, Akinobu Teramoto, Kenichi Abe, Takafumi Fujisawa, Naoto Miyamoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Statistical Evaluation of Process Damage Using an
Arrayed Test Pattern in a Large Number of MOSFETs,” IEEE Transactions on Electron
Devices, Vol.57, No.6, pp.1310-1318, June 2010.

E1451(C)A. Teramoto, T. Fujisawa, K. Abe, S. Sugawa, and T. Ohmi, “Statistical Evaluation for Trap
Energy Level of RTS Characteristics,” 2010 Symposium on VLSI Technology Digest ofTechnical Papers, pp.99-100, Honolulu, June 2010.
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Prof. Ohmi’s Paper

E1452(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “A Local Search Method Using
Histogram Features for Fast Retrieval of DNA Sequences,” The 2010 International
Conference of Information Engineering (World Congress on Engineering 2010), pp.395-398,London, June-July 2010.

E1453(C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Fast Search for MPEG Video Clips
from Large Video Database Using Combined Histogram Features,” The 2010 International
Conference of Signal and Image Engineering (World Congress on Engineering 2010),
637-640, London, June-July 2010.

E1454 (W)

X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi, “High Integrity Gate
Insulator Films on Atomically Flat Silicon Surface,” 2010 Asia-Pacific Workshop on
Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2010), IEICE
Technical Report ED2010-93, SDM2010-94 (2010-07), pp.183-188, Tokyo, June-July 2010.

E1455 (W)Yukihisa NAKAO, Rihito KURODA, Hiroaki TANAKA, Akinobu TERAMOTO,Shigetoshi SUGAWA and Tadahiro OHMI, “High Current Drivability FD-SOI CMOS withLow Source/Drain Series Resistance,” 2010 Asia-Pacific Workshop on Fundamentals andApplications of Advanced Semiconductor Devices, IEICE Technical Report ED2010-119,
SDM2010-120 (2010-07), pp.303-308, Tokyo, June-July 2010.

E1456 (F)Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, and Tadahiro Ohmi, “Relation
Between the Mobility, 1/f Noise, and Channel Direction in MOSFETs Fabricated on (100)and (110) Silicon-Oriented Wafers,” IEEE Transactions on Electron Devices, Vol.57, No.7,
pp.1597-1607, July 2010.

E1457(C)Tadahiro Ohmi, “Semiconductor Industry for 21st century,” Proceedings of the 12th
International Conference on Magnetic Fluids, pp.2-3, Sendai, plenary talk, August 2010.

E1458(W)

Tadahiro Ohmi, “Science Based New Silicon Devices Exhibiting Super High Performanceby Very New Plasma Equipment Completely Free From Damages,” Final Program of World
Automation Congress 2010, pp.6-7, Kobe, Keynote Lifetime Lecture, September 2010.

E1459 (F)

Shigemi Murakawa, Shu-ichi Ishizuka, Toshio Nakanishi, Tomoyuki Suwa, Akinobu
Teramoto, Shigetoshi Sugawa, Takeo Hattori, and Tadahiro Ohmi, “Depth Profile ofNitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature
Microwave Plasma Nitridation,” Japanese Journal of Applied Physics, Vol.49, No.9, Issue 1of 2, 091301, September 2010.

E1460(C)Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Hiroaki Tanaka, andTadahiro Ohmi, “Drastic reduction of the low frequency noise in Si(100) p-MOSFETs,”
Extended Abstracts of the 2010 International Conference on SOLID STATE DEVICES
AND MATERIALS, pp.41-42, Tokyo, September 2010.

E1461(C)Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi, “Impact ofChannel Direction Dependent Low Field Hole Mobility on Si(100),” Extended Abstracts ofthe 2010 International Conference on SOLID STATE DEVICES AND MATERIALS,
pp.51-52, Tokyo, September 2010.

E1462(C)Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A.
Teramoto, S. Sugawa and T. Ohmi, “Large Scale Test Circuits for Systematic Evaluation ofVariability and Noise of MOSFETs’ Electrical Characteristics,” Extended Abstracts of the2010 International Conference on SOLID STATE DEVICES AND MATERIALS,
pp.804-805, Tokyo, September 2010.

E1463(P)Qiu Chen, Feifei Lee, Koji Kotani, and Tadahiro Ohmi, “An Improved Fast Search Method
Using Histogram Features for DNA Sequence Database,” World Academy of Science,Engineering and Technology 70 2010, (2010 International Conference on Computer andInformation Science), pp. 237-240, Amsterdam, September 2010.

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Prof. Ohmi’s Paper

E1464(P)Feifei Lee, Qiu Chen, Koji Kotani, and Tadahiro Ohmi, “Fast Search Method for Large
Video Database Using Histogram Features and Temporal Division,” World Academy ofScience, Engineering and Technology 70 2010, (2010 International Conference on SignalProcessing), pp. 443-446, Amsterdam, September 2010.

E1465(C)Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki,
Shigetoshi Sugawa and Tadahiro Ohmi, “Tribological Study of Direct-polish Process onNon-Porous Ultra Low-k Dielectric/Cu Interconnects,” 2010 The Japan Society for Precision
Engineering Fall Meeting, pp.133-134, Nagoya, September 2010.

E1466(C)

Kazumasa Kawase, Akinobu Teramoto, Hiroshi Umeda, Tomoyuki Suwa, Yasushi Uehara,
Takeo Hattori, and Tadahiro Ohmi, “Densification of CVD-SiO2 film using radicaloxidation,” 218th Meeting of The Electrochemical Society, Abs.1387, CD-ROM, Las Vegas,
October 2010.

E1467-1(C)Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Nobuyuki Manabe, Hirokazu Suzuki,Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai,
Shigetoshi Sugawa and Tadahiro Ohmi, “Evaluation of Narrow Gap Filling Ability inShallow Trench Isolation by Organosiloxane Sol-Gel Precursor,” 218th Meeting of The
Electrochemical Society, Abs.1498, CD-ROM, Las Vegas, October 2010.

E1467-2(P)Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Nobuyuki Manabe, Hirokazu Suzuki,
Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai,Shigetoshi Sugawa and Tadahiro Ohmi, “Evaluation of Narrow Gap Filling Ability inShallow Trench Isolation by Organosiloxane Sol-Gel Precursor,” ECS Transactions, Vol.33,
No.3 Physics and Technology of High-k Materials 8, pp.135-143, October 2010.

E1468-1(C)Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano,
Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi, “Dependence of Thermal
Decomposition of Metal Organic Gases on Metal Surface for Gas Distribution System,”
218th Meeting of The Electrochemical Society, Abs.1771, CD-ROM, Las Vegas, October
2010.

E1468-2(P)Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano,
Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi, “Dependence of Thermal
Decomposition of Metal Organic Gases on Metal Surface for Gas Distribution System,”
ECS Transactions, Vol.33, No.13 State-of the –Art Program on Compound Semiconductors
52, pp.121-128, October 2010.

E1469(C)Xun Gu, Takenao Nemoto, Yugo Tomita, Kotaro Miyatani , Akane Saito, Yasuo Kobayashi,
Akinobu Teramoto , Shin-Ichiro Kuroki,Toshihisa Nozawa, Takaaki Matsuoka, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Electrical Characteristics of Novel Non-porous Low-k
Dielectric Fluorocarbon on Cu Interconnects for 22nm Generation and Beyond,” AdvancedMetallization Conference 2010; 20th Asian Session (ADMETA), pp.54-55, Tokyo, October
2010.

E1470(C)Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shigetoshi Sugawa, andTadahiro Ohmi, “Tribological Effects of Brush Scrubbing in Post-CMP Cleaning on theElectrical Characteristics in the Novel Non-porous Low-k Dielectric on Cu Interconnects,”
Advanced Metallization Conference 2010; 20th Asian Session (ADMETA), pp.160-161,
Tokyo、October 2010.

E1471(W)Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Integration of Novel-porous Low-k Dielectric
Fluorocarbon into Advanced Cu Interconnects,” IEICE Technical Report, Vol.110, No.241,
SDM2010-152～170, SDM-165, pp.53-56, October 2010.

E1472(C)

Ricardo Duyos-Mateo, Xun Gu, Takenao Nemoto, Yun Zhuang, Zhenxing Han, Yasa
Sampurno, Ara Philipossian, Shigetoshi Sugawa and Tadahiro Ohmi “Tribological, Thermal.
and Kinetic Studies of Ti and TiN CMP,” 2010 International Conference on
Planarization/CMP Technology, pp.13-18, Arizona, November 2010

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Prof. Ohmi’s Paper

E1473(C)Xun Gu, Takenao Nemoto, Yugo Tomita, Ricardo Duyos Mateo, Shigetoshi Sugawa andTadahiro Ohmi “Development of Direct-polish Process on Non-porous Ultra Low-k
Dielectric/Cu Interconnects for 22nm Generation and Beyond,” 2010 International
Conference on Planarization/CMP Technology, pp.51-54, Arizona, November 2010.

E1474(W)

Satoru Yamashita, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai,
Shigetoshi Sugawa and Tadahiro Ohmi, “High-purity Metal-organic Gas Distribution
System,” The 22nd International Micro Electronics Conference Proceeding, pp.1-6,
November 2010.

E1475(W)

Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Hirokazu Suzuki, Nobuyuki Manabe,
Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Tearmoto, Yasuyuki Shirai,Shigetoshi Sugawa, and Tadahiro Ohmi, “Applied study of SiO2 Based Film Formed by
Organosiloxane Sol-Gel Precursor,” The 22nd International Micro Electronics Conference
Proceeding, pp.7-13, November 2010.

E1476 (W)

Kazuhiro Yoshikawa, Tatsuro Yoshida, Kazuki Soeda, Teppei Uchimura, Takenao Nemoto,and Tadahiro Ohmi, “High Speed and Precision Silicon Wafer Thinning Technology forThree-Dimensional Integrated Circuit by Wet Etching,” The 22nd International MicroElectronics Conference Proceeding, pp.14-18, November 2010.

E1477 (W)

Hidetoshi Wakamatsu, Akinobu Teramoto, Tadahiro Ohmi, Hisanori Yamane, Naoto
Hirosaki, “Study of Nitride High-k Gate Dielectric Films by Radical Reaction MOCVDTechniques,” The 22nd International Micro Electronics Conference Proceeding, pp.25-29,
November 2010.

E1478(C)Naoto Miyamoto, Yohei Matsumoto, Hanpei Koike, Tadayuki Matsumura, Kenichi Osada,
Yaoko Nakagawa, and Tadahiro Ohmi, “Development of CAD Tool for 3D-FPGAs”, IEEE3D System Integration Conference 2010, CD-ROM, November 2010.

E1479 (F)Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Hirokazu Suzuki, Tadashi Koike,
Tatsuhiko Adachi, Tetsuya Goto, Akinobu Tearmoto, Yasuyuki Shirai, Shigetoshi Sugawa,and Tadahiro Ohmi, “Electrical Properties of Metal-Oxide-Containing SiO2 Films Formedby Organosiloxane Sol-Gel Precursor,” Japanese Journal of Applied Physics, Vol.49, No.11,111503, November 2010.

E1480(F)

Satoru Yamashita, Kohei Watanuki, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano,Yasuyuki Shirai, Shigetoshi Sugawa, and Tadahiro Ohmi, “Dependence of theDecomposition of Trimethylaluminum on Oxygen Concentration,” Journal of The
Electrochemical Society, Vol.158, Issue 2, H93-H96, December 2010.

E1481 (C)Rihito Kuroda, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto, Naoto Miyamoto,
Shigetoshi Sugawa and Tadahiro Ohmi, “Ultra-low Series Resistance W/ErSi2/n+-Si andW/Pd2Si/p+-Si S/D Electrodes for Advanced CMOS Platform,” IEEE International
ELECTRON DEVICES meeting (IEDM) 2010, pp.26.2.1-26.2.4, IEDM10-580-583,
December 2010.

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