RGS50TSX2D
Datasheet

1200V 25A Field Stop Trench IGBT
lOutline

VCES

1200V25A
1.7V395W

IC (100°C)
VCE(sat) (Typ.)PD

TO-247N(1) (2)(3)lInner Circuit(2)lFeatures
1) Low Collector - Emitter Saturation Voltage(1) Gate(2) Collector(3) Emitter*1(1)2) Short Circuit Withstand Time 10μs

*1 Built in FRD

3) Built in Very Fast & Soft Recovery FRD(3)4) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
PackaginglApplication
General Inverter
UPS

TypePV Inverter
Power Conditioner

Tube

Reel Size (mm)-Tape Width (mm)-Basic Ordering Unit (pcs)450

Packing CodeC11Marking

RGS50TSX2DlAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)Parameter

SymbolValue

UnitCollector - Emitter Voltage

VCES

1200

V

Gate - Emitter Voltage

VGES

±30

V

TC = 25°C

IC50A

TC = 100°C

IC25A

ICP*1

75

A

TC = 25°C

IF50

A

TC = 100°C

IF25A

IFP*175

A

TC = 25°C

PD395

W

TC = 100°C

PD

197

W

Operating Junction Temperature

Tj-40 to +175°C

Storage Temperature

Tstg-55 to +175°CCollector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation*1 Pulse width limited by Tjmax.

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2020.09 - Rev.C

Datasheet

RGS50TSX2D
lThermal ResistanceParameter

SymbolValues
Min.

Typ.

Max.

Unit

Thermal Resistance IGBT Junction - CaseRθ(j-c)--0.38

C/W

Thermal Resistance Diode Junction - CaseRθ(j-c)--0.80C/W

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter
Collector - Emitter Breakdown
Voltage

SymbolConditionsValues

Unit

Min.

Typ.

Max.

1200--V

Tj = 25℃--10μA

Tj = 175℃*2-2-mA

BVCES IC = 10μA, VGE = 0V
VCE = 1200V, VGE= 0V

Collector Cut - off Current

ICESGate - Emitter Leakage
Current

IGES

VGE = ±30V, VCE = 0V--±500nA

Gate - Emitter Threshold
Voltage

VGE(th) VCE = 5V, IC = 3.8mA

5.0

6.0

7.0

V

VCE(sat) Tj = 25°C

-1.70

2.10V

Tj = 175°C-2.20-V

IC = 25A, VGE = 15V
Collector - Emitter Saturation
Voltagewww.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

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Datasheet

RGS50TSX2DlIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter

SymbolValuesConditions

Min.

Typ.

Max.

Input CapacitanceCies

VCE = 30V

-2095

-

Output CapacitanceCoes

VGE = 0V-

166

-Reverse transfer CapacitanceCres

f = 1MHz-

12-Total Gate Charge

Qg

VCE = 500V-

67-

Gate - Emitter Charge

Qge

IC = 25A-19-

Gate - Collector Charge

Qgc

VGE = 15V

-25-Turn - on Delay Timetd(on)-37-

Rise Timetr-16-Turn - off Delay Timetd(off)-140-

Fall Time

tf

-205-

Turn-on Switching Loss

Eon

-

1.40-

Turn-off Switching Loss

Eoff

-

1.65

-

Turn - on Delay Timetd(on)

-36-

-

17-

-

170-

-

280-

-

1.50-

-

2.20

-

Rise Timetr

Turn - off Delay Timetd(off)Fall Timetf

Turn-on Switching Loss

Eon

Turn-off Switching Loss

Eoff

IC = 25A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diodereverse recovery

IC = 25A, VCC = 600V,
VGE = 15V, RG = 10Ω,Tj = 175°C
Inductive Load*Eon include diodereverse recoveryUnitpFnCnsmJnsmJ

IC = 75A, VCC = 1050VReverse Bias
Safe Operating AreaRBSOA Vp = 1200V, VGE = 15V

FULL SQUARE-RG = 50Ω, Tj = 175°C
Short Circuit Withstand Timetsc

VCC ≤ 600V
VGE = 15V, Tj = 25°C

10--μsShort Circuit Withstand Time

tsc*2VCC ≤ 600V
VGE = 15V, Tj = 150°C

8--μs*2 Design assurance without measurement

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2020.09 - Rev.C

DatasheetRGS50TSX2D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)Parameter

SymbolConditions

Values

Unit

Min.

Typ.

Max.

Tj = 25°C

-

1.65

2.10

Tj = 175°C-

1.85--

182-

ns-

15.7-

A-

1.7-

μC

IF = 25A
Diode Forward Voltage

VFV

Diode Reverse Recovery
Timetrr

Diode Peak Reverse
Recovery Current

Irr

Diode Reverse Recovery
ChargeQrr

Diode Reverse Recovery
Energy

Err-

422-

μJ

Diode Reverse Recovery
Timetrr-248-

ns

Diode Peak Reverse
Recovery Current

Irr-17.8-A

Diode Reverse RecoveryChargeQrr-

2.7-

μC

Diode Reverse Recovery
EnergyErr-787-μJ

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IF = 25A
VCC = 600V
diF/dt = 500A/μs
Tj = 25°C

IF = 25A
VCC = 600V
diF/dt = 500A/μs
Tj = 175°C

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Datasheet

RGS50TSX2D
lElectrical Characteristic Curves

Fig.2 Collector Current
vs. Case Temperature
60
50Collector Current : IC [A]Power Dissipation : PD [W]

Fig.1 Power Dissipation
vs. Case Temperature
40030020010040302010Tj ≤ 175ºC
VGE ≥ 15V0002550075 100 125 150 175

Case Temperature : TC [°C ]255075 100 125 150 175

Case Temperature : TC [°C ]Fig.4 Reverse Bias Safe Operating Area

1000

10010μs

100

Collector Current : IC [A]

Collector Current : IC [A]Fig.3 Forward Bias Safe Operating Area

100μs1010.1755025Tj ≤ 175ºC
VGE = 15V

TC = 25ºC
Single Pulse

00.01
110100

1000

10000

Collector To Emitter Voltage : VCE [V]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

03006009001200 1500

Collector To Emitter Voltage : VCE [V]

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Datasheet

RGS50TSX2D
lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

7575
VGE = 12V

Tｊ = 175ºC

VGE = 20V

Collector Current : IC [A]

Collector Current : IC [A]Tｊ = 25ºC

VGE = 15V

50

VGE = 10V

25

VGE = 20V
VGE = 15V

50

VGE = 12V
VGE = 10V

25
VGE = 8V

VGE = 8V

000123450Collector To Emitter Voltage : VCE [V]275

VGE = 15V

Collector To Emitter Saturation
Voltage : VCE(sat) [V]VCE = 10V

50

25Tj = 175ºC

345Fig.8 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
4Fig.7 Typical Transfer Characteristics

Collector Current : IC [A]

1Collector To Emitter Voltage : VCE [V]Tj = 25ºC

0IC = 50A

3IC = 25A

2IC = 10A

100246810121425

Gate To Emitter Voltage : VGE [V]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

5075100 125 150 175

Junction Temperature : Tj [°C ]6/112020.09 - Rev.C

Datasheet

RGS50TSX2DlElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10Tj = 175ºC

8Collector To Emitter Saturation
Voltage : VCE(sat) [V]Collector To Emitter Saturation
Voltage : VCE(sat) [V]Tj = 25ºC

IC = 50A
IC = 25A

6IC = 10A

4208IC = 50A
IC = 25A

6IC = 10A

42051015205Gate To Emitter Voltage : VGE [V]tf

Switching Time [ns]Switching Time [ns]20Fig.12 Typical Switching Timevs. Gate Resistance
1000tftd(off)td(on)

1015Gate To Emitter Voltage : VGE [V]Fig.11 Typical Switching Timevs. Collector Current
1000

10010trtd(off)

100ｔd(on)tr

10VCC = 600V, IC = 25A,
VGE = 15V, Tj = 175ºC
Inductive load

VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load

1101020304050020304050

Gate Resistance : RG [Ω]Collecter Current : IC [A]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

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Datasheet

RGS50TSX2DlElectrical Characteristic Curves

10Fig.14 Typical Switching Energy Losses
vs. Gate Resistance100
Switching Energy Losses [mJ]

Switching Energy Losses [mJ]Fig.13 Typical Switching Energy Losses
vs. Collector Current
100Eon

Eoff

1
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load

0.1

10Eon

Eoff

1

VCC = 600V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load

0.1010203040500Fig.15 Typical Capacitancevs. Collector To Emitter Voltage
10000

Capacitance [pF]

100Coes1010.01

304050Cres

Fig.16 Typical Gate Charge
15Gate To Emitter Voltage : V GE [V]Ciesf = 1MHz
VGE = 0V
Tj = 25ºC

20

Gate Resistance : RG [Ω]Collector Current : IC [A]

1000

10VCC = 300V

10VCC = 500V

5IC = 25A
Tj = 25ºC

00.1

1101000Collector To Emitter Voltage : VCE [V]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

1530456075

Gate Charge : QG [nQ]

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Datasheet

RGS50TSX2D
lElectrical Characteristic Curves

Fig.18 Typical Diode Reverce Recovery Timevs. Forward Current
400
Reverse Recovery Time : trr [ns]Forward Current : IF [A]Fig.17 Typical Diode Forward Current
vs. Forward Voltage
755025
Tj = 175ºC

Tj = 25ºC

0300
Tj = 175ºC

200

Tj = 25ºC

100

VCC = 600V
diF/dt = 500A/μs
Inductive load

000.5

11.5

22.5

30

Forward Voltage : VF [V]304050

Fig.20 Typical Diode Reverse Recovery
Energy Losses vs. Forward Current
2Reverse Recovery Energy Losses: Err [mJ]

Reverse Recovery Current : Irr [A]20
Tj = 175ºC

15

Tj = 25ºC

520

Forward Current : IF [A]Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
251010VCC = 600V
diF/dt = 500A/μs
Inductive load

0

VCC = 600V
Tj = 175℃
Inductive load

RG = 10Ω

1.51

RG = 30Ω

0.5

RG = 50Ω

0010203040500

Forward Current : IF [A]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

1020

30

4050

Forward Current : IF [A]

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Datasheet

RGS50TSX2DlElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal ImpedanceTransient Thermal Impedance: Zθ(j-c) [°C/W]

1
D = 0.5

0.2

0.1

0.1
PDMSingle Pulse
t1

0.010.01t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC

0.02
0.05
C11.184m

0.001
1E-5

1E-4

1E-3

C22.063m

C311.68m

R163.87m

1E-2

R270.00m

R3246.1m

1E-1

1E+0Pulse Width : t1 [s]Fig.22 Diode Transient Thermal Impedance
1Transient Thermal Impedance: Zθ(j-c) [°C/W]

0.10.2

D = 0.5

0.1
0.01

Single Pulse
PDM

0.02

0.01

t1

0.05

t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC

C1165.5u

0.001
1E-5

1E-4

1E-3

C21.790mC312.54m

1E-2

R182.30m

R2387.5m

1E-1

R3
330.2m

1E+0

Pulse Width : t1 [s]www.rohm.com© 2020 ROHM Co., Ltd. All rights reserved.

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2020.09 - Rev.C

Datasheet

RGS50TSX2D●Inductive Load Switching Circuit and Waveform

D.U.T.
Gate Drive Time
D.U.T.
90%

VGE

VG

10%

Fig.23 Inductive Load Circuit

90%

IC
td(on)

tr

trr , Qrr
IFton

td(off)

10%

tf

toff

VCE

diF/dt

10%
Irr

Eon

Fig.24 Diode Reverce Recovery Waveform

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EoffVCE(sat)Fig.25 Inductive Load Waveform

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2020.09 - Rev.C

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated inthis document.
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10) ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
12) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact aROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
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Datasheet
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1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
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3.

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