Prof. Ohmi's Paper
January－December, 2008
E1290 (F)ICHIROU TAKAHASHI, MASAKI HIRAYAMA, YASUYUKI SHIRAI, AKINOBUTERAMOTO, SHIGETOSHI SUGAWA and TADAHIRO OHMI, “13.56 and 100 MHz
Coupled Mode Rf-Sputtering for Ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) Film Applied to
One-Transistor Type Ferroelectric Random Access Memory,” Ferroelectrics, Vol.368,
pp.90-95, January 2008.

E1291 (F)

Tetsuya Goto, Kazuyuki Ikenaga, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa
and Tadahiro Ohmi, “Damage-free microwave-excited plasma etching without carrier
deactivation of heavily doped Si under thin silicide layer,” Journal of Vacuum Science &Technology A, Second Series, Vol.26, No.1, pp.8-16, January/February 2008.

E1292 (W)

Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa and Tadahiro Ohmi, “Atomically Flat
Gate Insulator/Silicon (100) Interface Formation Technology for High Performance LSI,”WPI & IFCAM Joint Workshop -Challenge of Interdisciplinary Materials Science toTechnological Innovation of the 21st Century-, pp.15, February 2008.

E1293 (W)

Tadahiro Ohmi, “Revolutional Progress of Silicon Device due to Radical Reaction Based
Semiconductor Manufacturing Technologies,” WPI & IFCAM Joint Workshop -Challengeof Interdisciplinary Materials Science to Technological Innovation of the 21st Century-,
pp.38, February 2008.

E1294 (C)Xiang Li, Xun Gu, Akinobu Teramoto, Rihito Kuroda, Rui Hasebe, Tomoyuki Suwa,
Ningmei Yu, Shigetoshi Sugawa, Takashi Ito and Tadahiro Ohmi, “The Cleaning Method
Which is Able to Keep the Smoothness of Si (100),” International Semiconductor
Technology Conference 2008, pp.469-474, Shanghai, March 2008.

E1295 (C)Rihito Kuroda, Akinobu Teramoto, Takanori Komuro, Weitao Cheng, Syunichi Watabe,
Ching Foa Tye, Shigetoshi Sugawa and Tadahiro Ohmi, “Characterization of MOSFETs
Intrinsic Performance using In-Wafer Advanced Kelvin-Contact Device Structure for High
Performance CMOS LSIs,” 2008 IEEE International Conference on Microelectronic Test
Structures, pp.155-159, Edinburgh, March 2008.

E1296(C)

Takenao Nemoto, Gu Xun, Hiroshi Imai, Akinobu Teramoto, Takashi Ito, Shigetoshi
Sugawa,and Tadahiro Ohmi, “Tantalum Nitride Formation in Xe Inert Gas on Ultra Low k
Dielectric for Cu Interconnects on 45nm LSI and beyond,” Material Research Society 2008
Spring Meeting, SanFransisco, March 2008.

E1297 (F)Azumi ITOH, Atsutoshi INOKUCHI, Seiji YASUDA, Akinobu TERAMOTO, Tetsuya
GOTO, Masaki HIRAYAMA, and Tadahiro OHMI, “Low-Dielectric-Constant Nonporous
Fluorocarbon Films for Interlayer Dielectric,” Japanese Journal of Applied Physics Vol. 47,
No. 4, Issue 2 of 2, pp. 2515-2520, April 2008.

E1298 (F)

Hiraku ISHIKAWA, Toshihisa NOZAWA, Takaaki MATSUOKA, Akinobu TERAMOTO,
Masaki HIRAYAMA, Takashi ITO, and Tadahiro OHMI, “Evaluation of New Amorphous
Hydrocarbon Film for Copper Barrier Dielectric Film in Low-k Copper Metallization,”
Japanese Journal of Applied Physics Vol. 47, No. 4, Issue 2 of 2, pp. 2531-2534, April 2008.

E1299 (F)Rihito KURODA, Akinobu TERAMOTO, Shigetoshi SUGAWA, and Tadahiro OHMI,“Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-,
Intrinsic-, and Accumulation-Mode Metal － Oxide － Semiconductor Field-EffectTransistors,” Japanese Journal of Applied Physics Vol. 47, No. 4, Issue 2 of 2, pp.
2668-2671, April 2008.

Prof. Ohmi’s Paper

E1300 (F)

Hirokazu ASAHARA, Atsutoshi INOKUCHI, Kohei WATANUKI, Masaki HIRAYAMA,
Akinobu TERAMOTO, and Tadahiro OHMI, “Characterization of Zinc Oxide Films Grown
by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition
Employing Microwave Excited High Density Plasma,” Japanese Journal of Applied Physics
Vol. 47, No. 4, Issue 2 of 2, pp. 2994-2998, April 2008.

E1301 (F)

Tatsunori ISOGAI, Hiroaki TANAKA, Tetsuya GOTO, Akinobu TERAMOTO, Shigetoshi
SUGAWA, and Tadahiro OHMI, “Formation and Property of Yttrium and Yttrium Silicide
Films as Low Schottcky Barrier material for n-Type Silicon,” Japanese Journal of Applied
Physics Vol. 47, No. 4, Issue 2 of 2, pp. 3138-3141, April 2008.

E1302(C)Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, and Tadahiro
Ohmi, “STATISTICAL EVALUATION FOR ANOMALOUS SILC OF TUNNEL OXIDEUSING INTEGRATED ARRAY TEG,” 2008 IEEE International Reliability Physics
Symposium Proceedings, 46th Annual, pp.219-224, Phoenix, April 2008.

E1303 (F)

Takenao Nemoto, Hiroshi Imai, Akinobu Teramoto, Takashi Ito, Shigetoshi Sugawa, andTadahiro Ohmi, “Tantalum Nitride Sputtering Deposition with Xe on Fluorocarbon for Cu
Interconnects”, Journal of Electrochemical Society, Vol.155 No.5, pp.H323- H328, May
2008.

E1304 (C)W. Cheng, A. Teramoto and T. Ohmi, “Impact of New Approach to Improve RF Power
FETs Performance on Si (110) Surface,” 213th Meeting of The Electrochemical Society,No.659, CD-ROM, Phoenix, May 2008.

E1305 (C)Weitao Cheng, Akinobu Teramoto and Tadahiro Ohmi, “A New Approach to Realize
High Performance RF Power FETs on Si (110) Surface,” 39th IEEE Annual PowerElectronics Specialists Conference, pp613, Rhodes, Greece, June 2008.

E1306 (C)A. Teramoto, Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, T. Sawa, N. Miyamoto, S.
Sugawa, and T. Ohmi, “Stress Induced Leakage Current and Random Telegraph Signal,”
15th Workshop on Dielectrics in Microelectronics, pp31-32, Berlin, June 2008.

E1307(C)P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, and T. Ohmi, “Different mechanism to
explain the 1/f noise in n-and p-SOI-MOS transistors fabricated on (110) and (100) siliconoriented wafers,” 15th Workshop on Dielectrics in Microelectronics, pp151-152, Berlin, June2008.

E1308 (C)Zhibin Pan, Koji Kotani, and Tadahiro Ohmi, “Fast Search Method for Vector Quantization
by Simultaneously Using Two Subvectors,” 2008 IEEE International Conference on
Multimedia and Expo(ICME 2008), CD-ROM, MemoryStick, pp729-732 Hannover,Germany June 2008

E1309(C)H. Imai, A. Teramoto, M. Sugimura, M. Kawasaki, S. Sugawa, and T. Ohmi, “A Novel
Simple Model of Roughness Induced Power Consumption for GHz Propagation on Printed
Circuit Boards,” International Conference on Electronics Packaging 2008, pp.130-133,
Tokyo, June 2008.

E1310 (W)

Hiroshi Imai, Masahiko Sugimura, Masafumi Kawasaki, Akinobu Teramoto, Shigetoshi
Sugawa and Tadahiro Ohmi, “A Material of Semiconductor Package with Low Dielectric
Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power
Propagation,” 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices(AWAD 2008), pp47-51, Sapporo, July 2008.
IEICE Technical Report Electron Devices Vol.108 No.121 ED2008-39~108, pp47-51, July
2008.

E1311 (W)

Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rhito Kuroda and Tadahiro Ohmi,“The data analysis technique of the atomic force microscopy for the atomically flat siliconsurface”, 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices(AWAD 2008), pp265-269, Sapporo, July 2008.
IEICE Technical Report Electron Devices Vol.108 No.121 ED2008-39~108, pp265-269,
July 2008.
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Prof. Ohmi’s Paper

E1312 (F)A. Ogura, T. Yoshida, D. Kosemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T.
Ohmi, T. Hattori “Evaluation of Si3N4/Si interface by UV Raman spectroscopy,” Applied
Surface Science, Vol.254, pp6229-6231, July 2008.

E1313 (C)Weitao Cheng, Akinobu Teramoto, Rhito Kuroda, ChingfFoa Tye, Syuichi Watabe,
Shigetoshi Sugawa, Tadahiro Ohmi, “Impact of Performance and Reliability Boosters in
Novel FD-SOI CMOS Devices on Si(110) Surface for Analog Applications,” 29th
International Conference on the Physics of Semiconductors (ICPS 2008), pp602-603, Brazil,
July 2008.

E1314 (F)

Shigetmi MURAKAWA, Masashi TAKEUCHI, Minoru HONDA, Shu-ichi ISHIZUKA,
Toshio NAKANISHI, Yoshihiro HIROTA, Takuya SUGAWARA, Yoshitsugu TANAKA,
Yasushi AKASAKA, Akinobu TERAMOTO, Shigetoshi SUGAWA, and Tadahiro OHMI,“Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access
Memory,” Japanese Journal of Applied Physics Vol. 47, No. 7, pp. 5380-5384, July 2008.

E1315 (L)Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Shot change detection using anovel histogram feature in compressed video,” IEICE Electronics Express, Vol. 5, No. 14,
pp. 503-509, July 2008.

E1316(W)

Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “ACCURATE EYE DETECTIONUSING ADABOOST AND RECTANGULAR SEPARABILITY FILTER,” Proceedings of
The 10th IASTED International Conference on Signal and Image Processing (SIP 2008),
pp.191-194, CD-ROM, Hawaii, August 2008.

E1317(W)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “FAST SEARCH FOR LARGEVIDEO DATABASE USING ADJACENT PIXEL INTENSITY DIFFERENCEQUANTIZATION HISTOGRAM,” Proceedings of The 10th IASTED International
Conference on Signal and Image Processing (SIP 2008), pp.114-117, CD-ROM, Hawaii,
August 2008.

E1318(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “A VQ-BASED FAST FACE
RECOGNITION ALGORITHM USING OPTIMIZED CODEBOOK,” Proceedings of 2008
International Conference on Wavelet Analysis and Pattern Recognition, pp.298-303, Hong
Kong August 2008.

E1319 (C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “AN IMPROVED FAST FACE
RECOGNITION AlGORITHM BASED ON ADJACENT PIXEL INTENSITYDIFFERENCE QUANTIZATION HISTOGRAM,” Proceedings of 2008 International
Conference on Wavelet Analysis and Pattern Recognition, pp.316-320, Hong Kong August
2008.

E1320 (F)Yasushi Shirakata, Nobuhiro Hidaka, Masayuki Ishitsuka, Akinobu Teramoto, and Tadahiro
Ohmi “High Permeability and Low Loss Ni-Fe Composite Material for High-Frequency
Applications,” IEEE TRANSACTIONS ON MAGNETICS, VOL.44, NO.9, pp.2100-2106,
September 2008.

E1321-1(C)Xun Gu, Akinobu Teramoto, Takenao Nemoto, Rui Hasebe, Takashi Itoh, Tadahiro Ohmi,“Damage-free post-CMP cleaning solution for Low-k fluorocarbon on advanced
interconnects,” 9th International Symposium on Ultra Clean Processing of Semiconductor
Surfaces (UCPSS 2008), Abstract Book, pp. 112-113, Belgium September 2008.

E1321-2 (P)Xun Gu, Takenao Nemoto, Akinobu Teramoto, Rui Hasebe, Takashi Itoh, Tadahiro Ohmi,“Damage-free Post-CMP Cleaning Solution for Low-k Fluorocarbon on Advanced
Interconnects,” Solid State Phenomena, Vols.145-146, pp.381-384, January 2009.

E1322-1(C)R. Hasebe, A. Teramoto, R Kuroda, T. Suwa, S. Sugawa and T.Ohmi, “3-step room
temperature wet cleaning process for silicon substrate,” 9th International Symposium on
Ultra Clean Processing of Semiconductor Surfaces (UCPSS 2008), Abstract Book, pp.
136-137, Belgium September 2008.

E1322-2 (P)Rui Hasebe, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa andTadahiro Ohmi, “Three-step Room Temperature Wet Cleaning Process for Silicon
Substrate,” Solid State Phenomena, Vols.145-146, pp.189-192, January 2009.
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Prof. Ohmi’s Paper

E1323-1(C)Yun Zhuang, Ting Sun, Yasa Adi Sampurno, Xun Gu, Takee Nemoto, Francisca Sudargho,
Sian Nie Theng, Ara Philipossian, Akinobu Teramoto, Tadahiro Ohmi, “Effect of Various
Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post
Copper CMP Cleaning Process,” 9th International Symposium on Ultra Clean Processing of
Semiconductor Surfaces(UCPSS 2008), Abstract Book, pp.130-131, Belgium September
2008.

E1323-2 (P)Yasa Sampurno, Yun Zhuang, Xun Gu, Sian Theng, Takenao Nemoto, Ting Sun, Francisca
Sudargho, Akinobu Teramoto, Ara Philipossian, and Tadahiro Ohmi, “Effect of Various
Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post
Copper CMP Cleaning Process,” Solid State Phenomena, Vols.145-146, pp.363-366,
January 2009.

E1324(C)Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, and Tadahiro Ohmi, “μc-Si1-xGex
Deposition on SiO2 by RF Magnetron Sputtering,” Extended Abstracts of the 2008
International Conference on SOLID STATE DEVICES AND MATERIALS, pp.566-567,
Tsukuba, September 2008.

E1325(C)

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa andTadahiro Ohmi, “Impact of Tungsten Capping Layer on Yttrium Silicide for Low ResistanceSource/Drain Contacts,” Extended Abstracts of the 2008 International Conference on
SOLID STATE DEVICES AND MATERIALS, pp.446-447, Tsukuba, September 2008.

E1326(C)

Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu
Teramoto, and Tadahiro Ohmi, “Effects of Ion-Bombardment-Assist and High Temperature
on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced
MOCVD,” Extended Abstracts of the 2008 International Conference on SOLID STATE
DEVICES AND MATERIALS, pp.134-135, Tsukuba, September 2008

E1327(C)K. Abe, T. Fujisawa, A. Teramoto, S. Watabe, S. Sugawa and T.Ohmi, “Anomalous RTS
Extractions from a Very Large Number of n-MOSFETs using TEG with 0.47 Hz-3.0 MHz
Sampling Frequency,” Extended Abstracts of the 2008 International Conference on SOLID
STATE DEVICES AND MATERIALS, pp.888-889, Tsukuba, September 2008

E1328(C)R. Kuroda, A. Teramoto, T. Suwa, Y. Nakao, S. Sugawa and T.Ohmi, “CMOSFET
Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation
Surface,” Extended Abstracts of the 2008 International Conference on SOLID STATE
DEVICES AND MATERIALS, pp.706-707, Tsukuba, September 2008

E1329(C)Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa andTadahiro Ohmi, “A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs
on Si(110) Using Accumulation Mode Device Structure for RF Analog Circuits,” Extended
Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND
MATERIALS, pp.876-877, Tsukuba, September 2008

E1330 (C)R. Kuroda, A. Teramoto, T. Suwa, R. Hasebe, X. Li, M. Konda, S. Sugawa, and T. Ohmi,“ Atomically Flat Gate Insulator/Silicon (100) Interface Formation Introducing High
Mobility, Ultra-low Noise, and Small Characteristics Variation CMOSFET,” 38th European
Solid-State Device Research Conference (ESSDERC 2008), pp.83-86, September 2008

E1331 (F)

Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi, “Accurate negative
bias temperature instability lifetime prediction based on hole injection,” Microelectronics
Reliability 48 (2008), pp.1649-1654, (2008 Elsevier Ltd.) October 2008

E1332 (W)Xun Gun, Takenao Nemoto, Akinobu Teramoto, Takeshi Ito, Tadahiro Ohmi, “Evaluationof Post Cu-CMP Cleaning Chemicals for Non-Porous Ultra Low-k Dielectric Fluorocarbon
Film,” IEICE Technical Report SDM 2008-149~168, SDM-149, pp.1-6, October 2008.

E1333 (W)Xun Gun, Takenao Nemoto, Ara Philipossian, Yasa Adi Sampurno, Jiang Cheng, Yun
Zhuang, Akinobu Teramoto, Takashi Ito, Tadahiro Ohmi, “Investigation of Novel End-point
Detection for Ta/Cu CMP,” IEICE Technical Report SDM 2008-149~168, SDM-150,
pp.7-11, October 2008.

3

Prof. Ohmi’s Paper

E1334 (W)

Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi,“Impact of Fully Depleted Silicon-On-Insulator Accumulation-mode CMOS on Si (110),”IEICE Technical Report SDM 2008-149~168, SDM-164, pp.51-55, October 2008.

E1335 (P)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “VQ-based Face Recognition
Algorithm Using Code Pattern Classification and Self-Organizing Maps,” 2008 9th
INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING PROCEEDINGS,(ICSP2008), Volume 3 of 3, pp.2059-2064, Beijing, October 2008

E1336 (P)Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Face Recognition Based on the
Combination of Histogram Features and Rough Location Information of Facial Parts,” 2008
9th INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING PROCEEDINGS,(ICSP2008), Volume 3 of 3, pp.2065-2069, Beijing, October 2008

E1337-1 (C)Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Yasuyuki Shirai,
and Tadahiro Ohmi, “Improvement of Nonaqueous Anodic Oxide Al2O3 Passivations of
Aluminum Alloy Surface for LSI/FPD Plasma Process Equipment,” PACIFIC RIMMEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The
Electrochemical Society, Meeting Abstracts, Abs.1625 CD-ROM, Honolulu, Hawaii,
October 2008.

E1337-2 (P)Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Yasuyuki Shirai,
and Tadahiro Ohmi, “Improvement of Barrier Anodic Oxide Al2O3 Passivation of
Aluminum Alloy for LSI/FPD Plasma Process Equipment,” ECS Transactions, Vol.16 Issue
32, pp.89-94, May 2009.

E1338-1 (C)P. Gaubert, A. Teramoto and T. Ohmi, “Hole mobility in Si(110) p-MOS transistors,”
PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE(PRiME2008)The Electrochemical Society, Meeting Abstracts, Abs.1840 CD-ROM,
Honolulu, Hawaii, October 2008.

E1338-2（P）

P. Gaubert, A. Teramoto and T. Ohmi, “Hole mobility in Si(110) p-MOS transistors”, ECS
Transactions, Vol.16 Issue 40, pp.7-12, May 2009.

E1339 (C)Rui Hasebe, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa andTadahiro Ohmi, “Three-Step Room Temperature Cleaning of Bare Silicon Surface for
Radical Based Semiconductor Manufacturing,” PACIFIC RIM MEETING ON
ELECTROCHEMICALANDSOLID-STATESCIENCE(PRiME2008)The
Electrochemical Society, Meeting Abstracts, Abs.1846 CD-ROM, Honolulu, Hawaii,
October 2008.

E1340 (C)W. Cheng, A. Teramoto and T. Ohmi, “Improved High Temperature Characteristics inAccumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces,”
PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE(PRiME2008)The Electrochemical Society, Meeting Abstracts,Abs.1868 CD-ROM,
Honolulu, Hawaii, October 2008.

E1341-1 (C)Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, and Tadahiro Ohmi, “Micro Crystalline
Si1-xGex Deposited by Magnetron Sputtering,” PACIFIC RIM MEETING ON
ELECTROCHEMICALANDSOLID-STATESCIENCE(PRiME2008)The
Electrochemical Society, Meeting Abstracts, Abs.2284 CD-ROM, Honolulu, Hawaii,
October 2008.

E1341-2 (P)A. Hiroe, T. Goto, A. Teramoto, and T. Ohmi, “Microcrystalline Si1-xGex Deposited by
Magnetron Sputtering,”ECS Transactions Vol.16 No.9 Thin Film Transistors 9, pp.183-192,
October 2008.

E1342 (C)

Sadaharu Morishita, Tetsuya Goto, Takashi Ito, Tadahiro Ohmi, “Study on Gas Replacement
Time in Plasma Process Chamber for Realizing Ideal Down Flow of Gas without
Disturbance,” International Symposium on Semiconductor Manufacturing 2008 (ISSM
2008), Conference Proceedings pp.177-180, Tokyo, October 2008.

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Prof. Ohmi’s Paper

E1343 (P)Akihiko Hiroe, Akinobu Teramoto, and Tadahiro Ohmi, “High Performance Bottom Gate
μ c-Si TFT Fabricated by Microwave Plasma CVD,” MRS Symposium Proceeding–Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2008, Material
Research Society, Vol.1066, A13-04 pp.307-312, 2008.

E1344 (F)

Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto,
Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, and Takashi Ito, “High-Efficiency
PFC Abatement System Utilizing Plasma Decomposition and Ca(OH)2/CaoImmobilization,” IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,
Vol.21, No.4, pp.668-675, November 2008

E1345(C)Naoto Miyamoto and Tadahiro Ohmi, “A 1.6mm2 4,096 Logic Elements Multi-Context
FPGA Core in 90nm CMOS,” IEEE Asian Solid-State Circuits Conference (A-SSCC) 2008,
pp.89-92, November 2008.

E1346(C)Yasa Sampurno, Xun Gu, Takenao Nemoto, Yun Zhuang, Akinobu Teramoto, Ara
Philipossian, and Tadahiro Ohmi, “End-Point Detection of Ta/TaN CMP via Shear Force
Analysis,” International Conference on Planarization/CMP Technology, pp.132-138,
November 2008.

E1347(W)

S.Morishirta, T.Goto, I. Akutsu, K. Ohyama., T. Ito, T. Ohmi, “Study on Fast Gas
Replacement in Microwave-Excited High Density Plasma Equipment,” The 20th
International Micro Electronics Conference Proceeding, pp.19-25, November 2008.

E1348 (P)Naoto Miyamoto and Tadahiro Ohmi, “Delay Evaluation of 90nm CMOS Multi-Context
FPGA with Shift-Register-Type Temporal Communication Module for Large-Scale Circuit
Emulation,” International Conference on Field-Programmable Technology (FPT2008),
pp.365-368, Taiwan, December 2008.

E1349 (F)

Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi
Nohira, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, and Takeo Hattori“Angle-resolved photoelectron study on the structures of silicon nitride films and Si3N4/Si
interfaces formed using nitrogen-hydrogen radicals,” JOURNAL OF APPLIED PHYSICS,
Vol.104, No.11, pp.114112-1-8, December 2008.

E1350(P)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “Scale-invariant Feature Extraction
by VQ-based Local Image Descriptor,” International Conference on Computational
Intelligence for Modelling ,Control & Automation(CIMCA2009), pp. 1217-1222, December
2008.

E1351(P)Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Fast Search Algorithm for ShortVideo Clips from Large Video Database Using a Novel Histogram Feature,” International
Conference on Computational Intelligence for Modelling, Control ＆ Automation(CIMCA2008), pp. 1223-1227, December 2008.

E1352(C)A.Hiroe, T.Goto, A.Teramoto, and T.Ohmi, “Deposition of Microcrystalline Si1-xGex by
Magnetron Sputtering,” IDW(International Display Workshops) '08, FMC1-4, December
2008.

5