Prof. Ohmi's Paper

January－December, 2009
E1353 (F)Rui Hasebe, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, andTadahiro Ohmi, “Three-Step Room-Temperature Cleaning of Bare Silicon Surface for
Radical-Reaction-Based Semiconductor Manufacturing,” Journal of Electrochemical Society,Vol.156 No.1, pp. H10- H17, January 2009.

E1354 (F)Sadaharu Morishita, Tetsuya Goto, Isao Akutsu, Kenji Ohyama, Takashi Ito, and Tadahiro
Ohmi, “Fast Gas Replacement in Plasma Process Chamber by Improving Gas Flow Pattern,”
Japanese Journal of Applied Physics Vol. 48, No. 1, pp. 016003-1-5, January 2009.

E1355 (F)Yasa Sampurno, Ara Philipossian, Sian Theng, Takenao Nemoto, Xun Gu, Yun Zhuang,
Akinobu Teramoto and Tadahiro Ohmi, “Effect of Polisher Kinematics in Reducing Average
and Variance of Shear Force and Increasing Removal Rate in Copper CMP,” ECS
Transactions, Vol.18, No. 1, pp.465-471, January 2009.

E1356 (F)

Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe,
Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi, “Stress-induced
leakage current and random telegraph signal,” Journal of Vacuum Science & Technology B,
Vol.27, No.1, pp. 435-438, January/February 2009.

E1357 (F)Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro
Ohmi,“Different mechanism to explain the 1/f noise in n-and p-SOI-MOS transistors
fabricated on (110) and (100) silicon-oriented wafers,” Journal of Vacuum Science &Technology B, Vol.27, No.1, pp. 394-401, January/February 2009.

E1358 (F)Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Rui Hasebe, Shigetoshi Sugawa, andTadahiro Ohmi, “Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation
Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High
Performance and Low-Noise Metal-Insulator-Silicon FETs,” IEEE TRANSACTIONS ON
ELECTRON DEVICES, VOL.56, NO.2, pp.291-298, February 2009.

E1359 (F)Rihito Kuroda, Akinobu Teramoto, Takanori Komori, Shigetoshi Sugawa, and Tadahiro
Ohmi, “Characterization for High-Performance CMOS Using In-Water Advanced
Kelvin-Contact Device Structure,” IEEE TRANSACTIONS ON SEMICONDUCTORMANUFACTURING, Vol.22, No.1, pp.126-133, February 2009

E1360 (W)

Tadahiro Ohmi, Masaki Hirayama, Koji Tanaka “Role of Semiconductor Industry in
Development of Future Solar Energy Technology,” Proceeding of Lecture at
SRC/SEMATECH Engineering Research Center for Environmentally Benign
Semiconductor Manufacturing, pp.133-145, Invited Talk, Arizona, February 2009.

E1361 (W)

Tadahiro Ohmi, “Science Based New Silicon Technology and New Silicon Thin Film Solar
Cells,” Tohoku University International Industry-Academia Cooperation Symposium, Tokyo,
March 2009.

E1362 (C)T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa and T. Ohmi
“Accurate Time Constant of Random Telegraph Signal Extracted by a Sufficient Long Time
Measurement in Very Large-Scale Array TEG,” 2009 IEEE International Conference on
Microelectronic Test Structures, pp.19-24, Oxnard, March 2009.

E1363 (C)T. Isogai, H. Tanaka, A. Teramoto, T. Goto, S. Sugawa and T. Ohmi “Advanced Method for
Measuring Ultra-Low Contact Resistivity Between Silicide and Silicon Based on Cross
Bridge Kelvin Resistor,” 2009 IEEE International Conference on Microelectronic Test
Structures, pp.109-113, Oxnard, March 2009.

Prof. Ohmi’s Paper

E1364 (C)S. Watabe, S. Sugawa, K. Abe, T. Fujisawa, N. Miyamoto, A. Teramoto, and T. Ohmi “A
Test Structure for Statistical Evaluation of Characteristics Variability in a Very Large
Number of MOSFETs,” 2009 IEEE International Conference on Microelectronic Test
Structures, pp.114-118, Oxnard, March 2009.

E1365(C)

Kenichi Abe, Yuki Kumagai, Shigetoshi Sugawa, Shunichi Watabe, Takafumi Fujisawa,
Akinobu Teramoto and Tadahiro Ohmi, “Asymmetry of RTS Characteristics along
Source-Drain Direction and Statistical Analysis of Process-Induced RTS,” 2009 IEEE
International Reliability Physics Symposium Proceedings, 47th Annual, pp.996-1001,
Montreal, Quebec, April 2009.

E1366 (F)

Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Shunichi Watabe, Shigetoshi Sugawa,and Tadahiro Ohmi “Anomalous Random Telegraph Signal Extractions from a Very Large
Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element
Groups with 0.47 Hz-3.0 MHz Sampling Frequency,” Japanese Journal of Applied Physics
Vol. 48, No. 4, Issue 2 of 2, pp. 04C044-1-5, April 2009.

E1367 (F)

Tatsunori Isogai, Hiroaki Tanaka, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa,and Tadahiro Ohmi “Impact of Tungsten Capping Layer on Yttrium Silicide for
Low-Resistance n+-Source/Drain Contacts,” Japanese Journal of Applied Physics Vol. 48,
No. 4, Issue 2 of 2, pp. 04C046-1-5, April 2009.

E1368 (F)Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Rihito Kuroda, Shigetoshi Sugawa, andTadahiro Ohmi “A Study on Very High Performance Novel Balanced Fully Depleted
Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
on Si(100) Using Accumulation-Mode Device Structure for Radio-Frequency Analog
Circuits,” Japanese Journal of Applied Physics Vol. 48, No. 4, Issue 2 of 2, pp. 04C047-1-4,
April 2009.

E1369 (F)Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao, Tomoyuki Suwa, Masahiro Konda, Rui
Hasebe, Xiang Li, Tatsunori Isogai, Hiroaki Tanaka, Shigetoshi Sugawa, and Tadahiro Ohmi
“Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat
Gate Insulator Film/Silicon Interface,” Japanese Journal of Applied Physics Vol. 48, No. 4,
Issue 2 of 2, pp. 04C048-1-6, April 2009.

E1370 (F)Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, and Tadahiro Ohmi “Deposition of
Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates,” Japanese Journalof Applied Physics Vol. 48, No. 4, Issue 2 of 2, pp. 04C124-1-6, April 2009.

E1371 (F)

Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu
Teramoto, and Tadahiro Ohmi, “Effects of Ion-Bombardment-Assist and High Temperature
on Growth of Zinc Oxide Filims by Microwave Excited High Density Plasma Enhanced
Metal Organic Chemical Vapor Deposition,” Japanese Journal of Applied Physics Vol. 48,
No. 4, Issue 2 of 2, pp. 04C135-1-6, April 2009.

E1372(C)

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Masaki Hirayama, Akinobu
Teramoto, and Tadahiro Ohmi, “Characterization of MgZnO films grown by plasma
enhanced metal-organic chemical vapor deposition,” Program & Abstracts of 6thInternational Symposium on Transparent Oxide Thin Films for Electronics and Optics(TOEO-6), pp.14, Ariake, Tokyo, April 2009.

E1373 (C)Xun Gu, Takenao Nemoto, Ara Philipossian, Jiang Cheng, Yasa Sampurno, Yun Zhuang,
Akinobu Teramoto, Takashi Ito, and Tadahiro Ohmi, “Novel End-point Detection Methodby Monitoring Shear Force Oscillation Frequency for Barrier Metal Polishing in Advanced
LSI,” Material Research Society 2009 Spring Meeting, San Francisco, pp.110, April 2009.

E1374 (C)Yasa Sampurno, Ara Philipossian, Sien Theng, Takenao Nemoto, Xun Gu, Yun Zhuang,
Akinobu Teramoto, Tadahiro Ohmi, “Effect of Pad Groove Design and Polisher Kinematics
in Reducing Average and Variance of Shear Force and Increasing Removal Rate in Copper
CMP,” Material Research Society 2009 Spring Meeting, San Francisco, pp.107, April 20091

Prof. Ohmi’s Paper

E1375 (F)Masahiro KONDA, Akinobu TERAMOTO, Tomoyuki SUWA, Rihito KURODA, andTadahiro OHMI, “Data Analysis Technique of Atomic Force Microscopy for Atomically
Flat Silicon Surfaces,” IEICE TRANS. ELECTRON, Vol. E92-C, No. 5, pp. 664-670, May
2009.

E1376-1(C)Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki,
Yasuyuki Shirai and Tadahiro Ohmi, “Influence of Mg concentration in Al-Mg-Zr alloy in
nonaqueous anodic oxide film,” 215th Meeting of The Electrochemical Society, Abs.0656,
CD-ROM, San Francisco, May 2009.

E1376-2(P)Minoru Tahara, Yasuhiro Kawase, Masafumi Kitano, Fumikazu Mizutani, Masayuki Saeki,
Yasuyuki Shirai and Tadahiro Ohmi, “The anodic oxide film formed on A-Mg-Zr alloys in
non-aqueous electrolyte,” ECS Transactions Vol.19 No.29,Corrosion, pp.37-43, May 2009

E1377(C)

Kohei Watanuki, Hirokazu Asahara, Atsutoshi Inokuchi, Takumi Kadota, Chihiro Hasegawa,Hiroki Kanato, Akinobu Teramoto, Yasuyuki Shirai and Tadahiro Ohmi, “Thermal
Decomposition Characteristics of Metal-organic Materials of Zinc Oxide for Evaluation as
MOCVD Precursor,” 215th Meeting of The Electrochemical Society, Abs.0703, CD-ROM,
San Francisco, May 2009.

E1378-1(C)X. Gu, T. Nemoto, A. Teramoto, T. Ito and T. Ohmi, “Reduction of Scratch on Brush
Scrubbing in Post CMP Cleaning by Analyzing Contact Kinetics on Ultra Low-k Dielectric”,
215th Meeting of The Electrochemical Society, Abs.0744, CD-ROM, San Francisco, May
2009.

E1378-2 (P)X. Gu, T. Nemoto, A. Teramoto, T. Ito and T. Ohmi, “Reduction of Scratch on Brush
Scrubbing in Post CMP Cleaning by Analyzing Contact Kinetics on Ultra Low-k Dielectric,”
ECS Transactions Vol.19 No.7 Chemical Mechanical Polishing 10, pp.103-109, May 2009

E1379-1(C)M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori and T.
Ohmi, “UV-Raman spectroscopy study on SiO2/Si interface,” 215th Meeting of The
Electrochemical Society, Abs.0780, CD-ROM, San Francisco, May 2009.

E1379-2 (P)M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori and T.
Ohmi, “UV-Raman Spectroscopy Study on SiO2/Si Interface,” ECS Transactions Vol.9 No.2
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10, pp.55-66, May 2009.

E1380-1(C)A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa and T. Ohmi, “Different
Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by
On-the-Fly Measurement,” 215th Meeting of The Electrochemical Society, Abs.0796,
CD-ROM, San Francisco, May 2009.

E1380-2 (P)A. Teramoto, R. Kuroda, T. Suko, M. Sato, T. Tsuboi, S. Sugawa and T. Ohmi “Different
Types of Degradation and Recovery Mechanisms on NBT Stress for Thin SiO2 Films by
On-the-Fly Measurement,” ECS Transactions Vol.9 No.2 Silicon Nitride, Silicon Dioxide,and Emerging Dielectrics 10, pp.339-350, May 2009.

E1381(C)P. Gaubert, R. Kuroda, S. Endo, Y. Kuboyama, T. Kitagaki, H. Nada, H. Tamura, A.
Teramoto and T. Ohmi, “Atomically flat interface for the reduction of the low frequency
noise in Si(100) nMOS transistors,” 215th Meeting of The Electrochemical Society,Abs.0916, CD-ROM, San Francisco, May 2009.

E1382-1(C)W. Cheng, A. Teramoto and T. Ohmi, “Impact of New Approach to Improve MOSFETs
Performance with Ultrathin Gate Insulator,” 215th Meeting of The Electrochemical Society,Abs.0937, CD-ROM, San Francisco, May 2009.

E1382-2 (P)Weitao Cheng, Akinobu Teramoto and Tadahiro Ohmi, “Impact of New Approach to
Improve MOSFETs Performance with Ultrathin Gate Insulator,” ECS Transactions Vol.9
No.4 Silicon-on-Insulator Techonology and Devices 14, pp.65-70, May 2009.

2

Prof. Ohmi’s Paper

E1383(W)Akihiko Hiroe, Tetsuya GOTO, Akinobu TERAMOTO and Tadahiro OHMI, “Deposition of
Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates,” IEICE Technical
Report on Trans. Electron Devices, Vol. 109, No.23, ED2009-18~35, pp. 37-42, May 2009.
IEICE Technical Report Silicon Devices and Materials Vol.109 No.2 SDM2009-8~25,
pp37-42, May 2009

E1384(C)Y. Shirakata, N. Hidaka, M. Ishitsuka, A. Teramoto, T. Ohmi, “Low loss composite material
for high-frequency applications consisting of Zn-Ni-Fe fine flakes,” IEEE International
Magnetics Conference (INTERMAG2009), DG-06, CD-ROM, Sacrament, May 2009.

E1385 (F)Sadaharu Morishita, Tetsuya Goto, Masaaki Nagase, and Tadahiro Ohmi, “Precise and high–speed control of partial pressures of multiple gas species in plasma process chamber using
pulse-controlled gas injection,” Journal of Vacuum Science and Technology A, Vol.27, No.3,
pp.423-429, May/June 2009.

E1386(F)

Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto,
Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, and Takashi Ito, “Inductively
coupeled plasma generator for an enviornmentally benign perfluorocarbon abatement
system,” Journal of Vacuum Science and Technology A, Vol.27, No.3, pp.465-469,
May/June 2009.

E1387(F)Xun Gu, Takenao Nemoto, Akinobu Teramoto, Takashi Ito, and Tadahiro Ohmi “Effect ofAdditives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k
Fluorocarbon,” Journal of The Electrochemical Society Volume156, Number 6,
pp.G409-415, June 2009.

E1388(P)

W. Cheng, C. Tye, P. Gaubert, A. Teramoto, S. Sugawa, T. Ohmi “Suppression of 1/f Noisein Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces,” 20th
International Conference on Noise and Fluctuations (ICNF2009) , pp.337-340, Italy, June2009.

E1389 (W)

Kenichi Abe, Takafumi Fujisawa, Akinobu Teramoto, Shunichi Watabe, Shigetoshi Sugawa
and Tadahiro Ohmi, “A Statistical Analysis of Distributions of RTS Characteristics by
Wide-Range Sampling Frequencies,” 2009 Asia-Pacific Workshop on Fundamentals andApplications of Advanced Semiconductor Devices(AWAD 2009), 1A.8, Korea, June 2009.
IEICE Technical Report Silicon Devices and Materials Vol.109 No.98 SDM2009-45~96,
pp29-32, June 2009.

E1390 (W)

A. Teramoto, W. Cheng, C.F. Tye, S. Sugawa, T. Ohmi, “MOS Transistors fabricated on
Si(551) surface based on radical reaction processes,” 2009 Asia-Pacific Workshop on
Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2009), 2B.2,
Korea, June 2009.
IEICE Technical Report Silicon Devices and Materials Vol.109 No.98 SDM2009-45~96,
pp149-152, June 2009.

E1391 (W)Tomoyuki SUWA, Takashi ARATANI, Masaaki HIGUCHI, Shigetoshi SUGAWA, Eiji
IKENAGA, Jiro USHIO, Hiroshi NOHIRA, Akinobu TERAMOTO, Tadahiro OHMI and
Takeo HATTORI, “Study on Compositional Transition Layers at Gate Dielectrics/Si
Interface by using Angle-resolved X-ray Photoelectron,” 2009 Asia-Pacific Workshop on
Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2009), 2B.7,
Korea, June 2009.
IEICE Technical Report Silicon Devices and Materials Vol.109 No.98 SDM2009-45~96,
pp157-160, June 2009.

E1392 (F)

Takenao Nemoto, Tatsuya Fukino, Sadahiro Tsurekawa, Xun Gu, Akinobu Teramoto, andTadahiro Ohmi, “In situ Observation of Grain Growth on Electroplated Cu Film by Electron
Backscatter Diffraction,” Japanese Journal of Applied Physics Vol. 48, No. 6, Issue 1 of 2,
pp. 066507-1-8, June 2009.

3

Prof. Ohmi’s Paper

E1393(P)Feifei Lee, Qiu Chen, Koji Kotani, and Tadahiro Ohmi, “Fast Search for MPEG Video Clips
Using Adjacent Pixel Intensity Difference Quantization Histogram Feature,” World
Academy of Science, Engineering and Technology (WASET2009), pp. 777-780, Paris, June2009

E1394(P)Qiu Chen, Feifei Lee, Koji Kotani, and Tadahiro Ohmi, “Robust VQ-based Local Descriptor
for SIFT Feature”, World Academy of Science, Engineering and Technology (WASET2009),
pp.1329-1333, Paris, June 2009

E1395 (F)

Hiroshi Imai, Masahiko Sugimura, Masafumi Kawasaki, Akinobu Teramoto, Shigetoshi
Sugawa, and Tadahiro Ohmi, “High-Frequency Propagation on Printed Circuit Board Usinga Material with a Low Dielectric Constant, a Low Dielectric Loss, and a Flat Surface,” IEEE
Transactions on Components and Packaging Technologies, Vol32, No.2, pp.415-423, June2009.

E1396 (F)

Tetsuya Goto, Takaaki Matsuoka and Tadahiro Ohmi, “Rotation magnet sputtering:
Damage-free novel magnetron sputtering using rotating helical magnet with very high target
utilization,” Journal of Vacuum Science & Technology A, Vol.27, No.4, pp.653-659,
July/August 2009.

E1397 (F)

Tetsuya Goto, Atsutoshi Inokuchi, Kiyotaka Ishibashi, Seiji Yasuda, Toshio Nakanishi and
Masayuki Kohno, Masahiro Okesaku and Masaru Sasaki, Toshihisa Nozawa, Masaki
Hirayama and Tadahiro Ohmi, “Establishment of very uniform gas-flow pattern in theprocess chamber for microwave-excited high-density plasma by ceramic shower plate,”
Journal of Vacuum Science & Technology A, Vol.27, No.4, pp.686-695, July/August 2009.

E1398-1 (C)Weitao Cheng, Akinobu Teramoto and Tadahiro Ohmi, “Experimental demonstration andanalysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device
structure,” INFOS2009 Proceedings of the 16th International Conference “Insulating Flms on
Semiconductors”, pp.1786-1788, United Kingdom, July 2009.

E1398-2 (F)Weitao Cheng, Akinobu Teramoto and Tadahiro Ohmi, “Experimental demonstration andanalysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device
structure,” Microelectronic Engineering Vol.86/7-9, pp.1786-1788, July-September 2009.

E1399 (F)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “An Accurate Eye Detection
Method Using Elliptical Separability Filter and Combined Features,” International Journal ofComputer Science & Network Security, Vol.9, No.8, pp.65-72, August 2009.

E1400 (F)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Face Recognition Using Adjacent
Pixel Intensity Difference Quantization Histogram,” International Journal of Computer
Science & Network Security, Vol.9, No.8, pp.147-154, August 2009.

E1401(C)Weitao Cheng, Akinobu Teramoto and Tadahiro Ohmi, “Obvious Suppression of
Performance Degradation Induced by Thermal Effect in SOI Power LDMOSFETs Using
Accumulation Mode Device Structure,” 13th European Conference on Power Electronics
and Applications, CD-ROM, Spain, September 2009.

E1402(C)Philippe Gaubert, Akinobu Teramoto and Tadahiro Ohmi, “Damage free very low electron
temperature plasma process for low Flicker noise in p-MOS fabricated on (100) and (110)silicon-oriented wafers,” 39th European Solid-State Device Research Conference,
pp.177-180, Greece, September 2009.

E1403 (F)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “A Robust Eye Detection Approach
Based on Edge-related Information,” International Journal of Computer Science & Network
Security, Vol.9, No.9, pp.22-27, September 2009.

E1404 (F)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “Fast Video Search Algorithm forLarge Video Database Using Adjacent Pixel Intensity Difference Quantization HistogramFeature,” International Journal of Computer Science & Network Security, Vol.9, No.9,
pp.214-220, September 2009.

4

Prof. Ohmi’s Paper

E1405(C)T. Fujisawa, K. Abe, S. Watabe, N. Miyamoto, A. Teramoto, S. Sugawa and T.Ohmi,“Statistical Analysis of Time Constant Ratio of Random Telegraph Signal with Very
Large-Scale Array TEG,” Extended Abstracts of the 2009 International Conference on
SOLID STATE DEVICES AND MATERIALS, pp.28-29, Sendai, October 2009.

E1406(C)K. Abe, A. Teramoto, S. Watabe, T. Fujisawa, S. Sugawa, Y. Kamata, K. Shibusawa, and T.
Ohmi, “Impact of Channel Doping Concentration on Random Telegraph Signal Noise”,
Extended Abstracts of the 2009 International Conference on SOLID STATE DEVICES
AND MATERIALS, pp.30-31, Sendai, October 2009.

E1407(C)

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Masaki Hirayama, Akinobu
Teramoto, and Tadahiro Ohmi, “Light-emitting Diode Based on ZnO by Plasma Enhanced
MOCVD Employing Microwave Exited Plasma,” Extended Abstracts of the 2009
International Conference on SOLID STATE DEVICES AND MATERIALS, pp.1308-1309,
Sendai, October 2009.

E1408(C)Rihito Kuroda, Tatsunori Isogai, Hiroaki Tanaka, Yukihisa Nakao, Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Impact of Very Low Series Resistance due toRaised Metal S/D Structure with Very Low Contact Resistance Silicide for sub-100nm
nMOSFET,” Extended Abstracts of the 2009 International Conference on SOLID STATE
DEVICES AND MATERIALS, pp.994-995, Sendai, October 2009.

E1409(C)

Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa andTadahiro Ohmi, “Low Contact Resistance with Low Silicide/p+-Silicon Schottky Barrier forHigh Performance p-channel MOSFETs,” Extended Abstracts of the 2009 International
Conference on SOLID STATE DEVICES AND MATERIALS, pp.332-333, Sendai,
October 2009.

E1410(C)Y. Kamata, K. Shibusawa, K. Abe, S. Sugawa, A. Teramoto, T. Ohmi, “Suppression of VthVariability for n-MOSFET in Dual Oxide Formation Process,” Extended Abstracts of the2009 International Conference on SOLID STATE DEVICES AND MATERIALS,
pp.378-379, Sendai, October 2009.

E1411-1(C)Weitao Cheng, Akinobu Teramoto, and Tadahiro Ohmi, “Very High Performance CMOS on
Si(551) Surface using Radical Oxidation Silicon Flattening Technology and
Accumulation-mode SOI Device Structure,” 216th Meeting of The Electrochemical Society,Abs.2355, CD-ROM, Vienna, October 2009.

E1411-2 (P)Weitao Cheng, Akinobu Teramoto, and Tadahiro Ohmi, “Very High Performance CMOS on
Si(551) Surface using Radical Oxidation Silicon Flattening Technology and
Accumulation-mode SOI Device Structure,” ECS Transactions Vol.25 No.7 ULSI Process
Integration 6, pp.115-129, October 2009

E1411-3(P)Weitao Cheng, Akinobu Teramoto, and Tadahiro Ohmi, “Very High Performance CMOS on
Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device
Structure,” Journal of The Electrochemical Society, Vol.157, Issue 3, H389-H393, February
2010.

E1412 (F)Yasushi Shirakata, Nobuhiro Hidaka, Masayuki Ishitsuka, Akinobu Teramoto, and Tadahiro
Ohmi, “Low-Loss Composite Material Containing Fine Zn-Ni-Fe Flakes forHigh-Frequency Applications,” IEEE TRANSACTIONS ON MAGNETICS, VOL.45,
NO.10, pp.4337-4340, October 2009.

E1413(C)Yuji Saito, Hiroshi Takahashi, Kazuo Ohtsubo, Masaki Hirayama, Shigetoshi Sugawa, Herzl
Aharoni and Tadahiro Ohmi, “Improving the Performance of MOSFET’s through their
Exposure to Hydrogen Radicals/Inert Gas Plasma Mixture,” 28th ISRAEL VACUUM
SOCIETY ANNUAL CONFERENCE AND TECHNICAL WORKSHOP, Poster No.
P-SU-10, Herzliya, Israel, October 2009.

E1414(C)

Tatsufumi Hamada, Yuji Saito, Geun-Min Choi, Shigetoshi Sugawa, Herzl Aharoni, andTadahiro Ohmi, “The Growth of Polyoxide Thin Films at 400oC by Oxygen Radicals,” 28th
ISRAEL VACUUM SOCIETY ANNUAL CONFERENCE AND TECHNICALWORKSHOP, Poster No. P-SU-11, Herzliya, Israel, October 2009.
5

Prof. Ohmi’s Paper

E1415(C)Toru Takeda, Kouji Tanaka, Hirotada Inoue, Masaki Hirayama, Toshirou Tsumori, Herzl
Aharoni, and Tadahiro Ohmi, “Growth of Thin Microcrystalline and Amorphous Films for
Tandem Solar Cells at Low Temperature by Radical Based Process within a Single Chamber
Plasma System,” 28th ISRAEL VACUUM SOCIETY ANNUAL CONFERENCE ANDTECHNICAL WORKSHOP, Poster No. P-SU-12, Herzliya, Israel, October 2009.

E1416(W)Xun Gu, Takenao Nemoto, Yasa Adi Sampurno, Jiang Cheng, Sian Theng, Akinobu
Teramoto, Ricardo Duyos Mateo, Leonard Borucki, Yun Zhuang, Ara Philipossian,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Tribological Study for Low Shear Force CMP
Process on Damascene Interconnects,” IEICE Technical Report, SDM2009-117～134,
SDM-121, pp.21-26, October 2009.

E1417(W)

Philippe GAUBERT, Akinobu TEARAMOTO, and Tadahiro OHMI, “Ｌow frequency noisein Si(100) and Si(110) p-channel MOSFETs,” IEICE Technical Report, SDM2009-117～
134, SDM-130, pp.57-62, October 2009.

E1418 (F)Nobuhiro Hidaka, Masayuki Ishitsuka, Yasushi Shirakata, Akinobu Teramoto and Tadahiro
Ohmi, “The electric properties of low-magnetic-loss magnetic composites containing
Zn–Ni–Fe particles,” Journal of Physics: Condensed Matter, Vol.21, No. 43, 436009,
October2009.

E1419(C)K. WATANUKI, A. INOKUCHI, A. BAMBA, H. SUZUKI, T. KOIKE, T. ADACHI, A.
TERAMOTO, Y. SHIRAI, S. SUGAWA, T. OHMI, “The Study of Electrical and Structual
Properties of SiO2 Film Containing Metal oxide using Organosiloxane-based Silica
Precursor,” AVS 56th International Symposium & Exhibition, pp. 81, San Jose, November
2009.

E1420(C)S. YAMASHITA, M. NAGASE, K. IKEDA, M. KITANO, Y. SHIRAI, T. OHMI,“Decomposition Characteristic of Metal-organic Gases,” AVS 56th International Symposium& Exhibition, pp. 115, San Jose, November 2009.

E1421(C)T. GOTO, N. SEKI, T. MATSUOKA, T. OHMI, “Damage-Free, Uniform andHigh-Target-Utilization Novel Magnetron Sputtering Plasma Source by Rotating Helical
Magnet,” AVS 56th International Symposium & Exhibition, pp. 133, San Jose, November
2009.

E1422(C)Xun Gu, Takenao Nemoto, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi,“Qualification of Dynamic Pressure Distribution on Wafer by Pressure Sensing Sheet during
Polishing,” International Conference on Planarization/CMP Technology 2009, pp.22-27,
Fukuoka, November 2009.

E1423(C)Yasa Sampurno, Takenao Nemoto, Yun Zhuang, Sian Theng,, Xun Gu, Tadahiro Ohmi and
Ara Philipossian, “Optimizing Pad Groove Design and Polishing Kinematics for Reduced
Shear Force, Low Force Fluctuation and High Removal Rate Attributes of Copper CMP,”
International Conference on Planarization/CMP Technology 2009, pp.383-388, Fukuoka,
November 2009.

E1424 (W)

Tadahiro Ohmi, Masaki Hirayama, Tetsuya Goto, Hiroshi Imai, Atsutoshi Inokuchi,
Masafumi Kitano, Minoru Tahara, “Science Baesed New Silicon Technologies Based on
New Manufacturing Equipment Completely Free From Contaminations and Damages,” The
21st International Micro Electronics Conference Proceeding, pp.88-114, November 2009.

E1425(C)Naoto Miyamoto, Katsuhiko Hanzawa, and Tadahiro Ohmi, “An ASIC Implementation of
Phase Correlation Based on Run-Time Reconfiguration Technique,” 2009 International
Conference on Field-Programmable Technology, pp. 308-311, Sydney, December 2009.

E1426(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “A Fast Retrieval of DNA
Sequences Using Histogram Information,” 2009 Second International Conference on Future
Information Technology and Management Engineering, pp.529-532, Sanya, December 2009.

E1427(C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “A Modified Adjacent Pixel
Intensity Difference Quantization Method for Face Recognition,” 2009 Second International
Conference on Future Information Technology and Management Engineering, pp.533-536,
Sanya, December 2009.
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Prof. Ohmi’s Paper

E1428(W)

Tadahiro Ohmi, “Science Based New Silicon Technologies Exhibiting Very High Speed
Performance Up to 100GHz Clock Rate,” Proceedings International Conference on Sensors
and Related Networks (SENNET’09), Ｋ36, Invited Talk, Vellore, India, December 2009.

E1429(M)Tadahiro Ohmi, Masaki Hirayama, Tetsuya Goto, Atsutoshi Inokuchi, Masafumi Kitano,and Minoru Tahara, “Science Based New Silicon Technologies Based on New
Manufacturing Equipment Completely Free From Contaminations and Damages,”
WPI-AIMR NEWS Volume 8, pp.93-107, December 2009.

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