Prof. Ohmi's Paper
January－December, 1989
35(F)Nobuyoshi Tanaka, Tadahiro Ohmi, and Yoshio Nakamura, “A Novel Bipolar Imaging
Devices with Self-noise Reduction Capability,” IEEE Trans. Electron Devices, Vol. 36, No.
1, pp. 31-38, January 1989.

36(F)Nobuyoshi Tanaka, Tadahiro Ohmi, Yoshio Nakamura, and Shigeyuki Matsumoto, “A
Low-noise Bi-CMOS Linear Image Sensor with Auto-focusing Function,” IEEE Trans.
Electron Devices, Vol. 36, No. 1, pp. 39-45, January 1989.

37(L)Tadahiro Ohmi, Hiroshi Iwabuchi, Tadashi Shibata, and Takeshi Ichikawa, “ElectricalCharacterization of Epitaxial Silicon Films Formed by a Low Kinetic Energy Particle
Process,” Appl. Phys. Letters, Vol. 54, No. 3, pp. 253-255, January 1989.

38(M)Kazuhiko Sugiyama, Tadahiro Ohmi, Takeshi Okumura, and Fumio Nakahara,“Electropolished, Moisture-free Piping Surface Essential for Ultrapure Gas System,”
Microcontamination, Vol. 7, No. 1, pp. 37-65, January 1989.

39(L)T. Ohmi, T. Ichikawa, T. Shibata, and H. Iwabuchi,“Crystal Structure Analysis of Epitaxial
Silicon Films Formed by a Low Kinetic Energy Particle Process,” Appl. Phys. Letters, Vol.
54, No. 6, pp. 523-525, February 1989.

40(C)Nobuyoshi Tanaka, Seiji Hashimoto, Mahito Shinohara, Shigetoshi Sugawa, Masakazu
Morishita, Shigeyuki Matsumoto, Yoshio Nakamura, and Tadahiro Ohmi, “A 310k Pixel
Bipolar Imager (BASIS),” Digest of Technical Papers, 1989 IEEE International Solid-state
Circuits Conference, New York, pp. 96-97, February 1989.

41(M)Koichi Yabe, Yoshito Motomura, Hiroaki Ishikawa, Tetsuo Mizuniwa, and Tadahiro Ohmi,“Responding to the Future Quality Demands of Ultrapure Water,” Microcontamination, Vol.
7, No. 2, pp. 37-68, February 1989.

42(L)Junichi Murota, Naoto Nakamura, Manabu Kato, Nobuo Mikoshiba, and Tadahiro Ohmi,“Low-temperature Silicon Selective Deposition and Epitaxy on Silicon Using the Thermal
Decomposition of Silane under Ultraclean Environment,” Appl. Phys. Letters, Vol. 54, No.
11, pp. 1007-1009, March 1989.

43(M)Koichi Yabe, Toshio Kumagai, Hiroaki Ishikawa, Shigeyuki Akiyama, Tetuo Mizuniwa, andTadahiro Ohmi, “Evaluating Equipment Technologies for Future Monitoring Demands ofUltrapure Water,” Microcontamination, Vol. 7, No. 3, pp. 25- 30, March 1989.

44(M)Hirohisa Kikuyama, Nobuo Miki, Jun Takano, and Tadahiro Ohmi, “Developing
Property-controlled, High-purity Buffered Hydrogen Fluorides for ULSI Processing,”
Microcontamination, Vol. 7, No. 4, pp. 25-51, April 1989.

45(M)Toshihito Takenami, Tadahiro Ohmi and Souji Fukuda, “Air Conditioning and Particle
Filtration Systems for Energy Saving,” Solid State Technology, pp. 161-168, April 1989.

46(C)T. Ohmi, M. Morita, E. Hasegawa, M. Kawakami, and K. Suma, “Control of Native Silicon
Oxide Growth in Air or in Water,” Extended Abstracts, 175th Electrochemical Society
Meeting, Los Angeles, Abstract No. 160, pp. 227-228, May 1989.

46-2(E)

T. Ohmi, M. Morita, E. Hasagawa, M. Kawakami, and K. Suma, “Control of Native Silicon
Oxide Growth in Air or in Water,” C. M. Osburn and J. M. Andrews, eds., ULSI Scienceand Technology/1989, PV89-9, pp. 327-335, The Electrochemical Society, Pennington, NJ,
1989.

47(C)

T. Ohmi, M. Kosugi, M. Morita, G. S. Jong, and H. Kumagai, “A Step Coverage and a Hole
Filling of Si Film by Surface Reaction Film Formation Technology,” Extended Abstracts,
175th Electrochemical Society Meeting, Los Angeles, Abstract No. 190, pp. 276-277, May
1989.

Prof. Ohmi’s Paper

47-2(E)

T. Ohmi, M. Kosugi, M. Morita, G. S. Jong, and H. Kumagai, “A Step and a Hole Filling of
Si Film by Surface Reaction Film Formation Technology,” C.M.Osburn and J.M.Andrews,eds., ULSI Science and Technology/1989, PV89-9, pp. 649-659, The ElectrochemicalSociety, Pennington, NJ, 1989.

48(M)Tadahiro Ohmi, Hiroyuki Mishima, Tetsuo Mizuniwa, and Mitsuo Abe, “DevelopingContamination-free Cleaning and Drying Technologies,” Microcontamination, Vol. 7, No. 5,
pp. 25-108, May 1989.

49(C)Tadahiro Ohmi, “Science and Technology of Ultra Clean Systems,” Proceedings ofTechnical Papers, 1989 International Symposium on VLSI Technology, Systems andApplications, Taipei, pp. 327-331, May 1989.

50(C)

H. Kuwabara, S. Saitoh, T. Shibata, and T. Ohmi, “High-quality Aluminum ULSI
Metallization Realized by Low-kinetic Energy Particle Process,” Digest of Technical Papers,
1989 Symposium on VLSI Technology, Kyoto, pp. 71-74, May 1989.

51(C)M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma, “Native Layer-free
Oxidation for Very Thin Gate Oxides,” Digest of Technical Papers, 1989 Symposium on
VLSI Technology, Kyoto, pp. 75-76, May 1989.

52(C)Tadahiro Ohmi, “Trend of High Performance Power Devices and Power IntegratedCircuits,” Proceedings, 1989 International Symposium on Power Electronics, Seoul, pp.
13-17, May 1989.

53(C)Hirohisa Kikuyama, Jun Takano, Nobihiro Miki, and Tadahiro Ohmi, “Cleanness
Technology of Hydrofluoric Acid,” 1989 Proceedings, 35th Annual Technical Meeting“Building Tomorrow's Environment”, Anaheim, pp. 369-376, May 1989.

54(C)Tadahiro Ohmi, “Future Trends in Ultra Clean Technology,” VII OSK-SEMICONDUCTORSEMINAR, Kyoto, pp. 81-90, June 1989.

55(C)

Tadashi Shibata and Tadahiro Ohmi, “Low-temperature Growth of High Quality Thin Films
by Low-energy Ion Bombardment,” Technical Proceedings SEMICON/Osaka 1989, Osaka,
pp. 63-71, June 1989.

56(C)Hirohisa Kikuyama, Nobuhiro Miki, Masayuki Miyashita, Ichiro Kawanabe, and Tadahiro
Ohmi, “Selective Etching of Native Oxide by Dry Processing,” Technical Proceedings
SEMICON/Osaka 1989, Osaka, pp. 129-140, June 1989.

57(M)Susumu Hashimoto, Masao Kaya, and Tadahiro Ohmi, “Improving and Maintaining
Electronics-grade
ChemicalQuality
Requires
TechnologicalAdvances,”
Microcontamination, Vol. 7, No. 6, pp. 25-28, June 1989.

58(C)Tadahiro Ohmi, “Future Trends in Ultra Clean Technology,” SEMI's European Industry
Forecast Conference, Cannes, June 1989.

59(C)Tadahiro Ohmi, “High Quality Metalization by Ion Bombardment Having Precisely
Controlled Energy,” Digest of Papers, 1989 2nd MicroProcess Conference, Kobe, pp.
112-115, July 1989.

60(C)K. Hashimoto, T. Ichikawa, H. Iwabuchi, T. Shibata, and T. Ohmi, “Reduction in
Epitaxial-silicon-growth Temperature below 300 C by Low-energy Ion Bombardment,”
Digest of Papers, 1989 2nd MicroProcess Conference, Kobe, pp. 116-117, July 1989.

61(C)M. Miyashita, I. Kawanabe, T. Ohmi, N. Miki, and H. Kikuyama, “Gas-phase Etching ofPSG Films with Perfect Selectivity on Thermal SiO2 and CVD SiO2,” Digest of Papers, 1989
2nd MicroProcess Conference, Kobe, pp. 182-183, July 1989.

62(M)Kazuhiko Sugiyama, Fumio Nakahara, and Tadahiro Ohmi, “Designing a Gas Delivery
System for Lower Submicron ULSI Processes,” Microcontamination, Vol. 7, No. 7, pp.
29-102, July 1989.

63(F)H. Mishima, T. Yasui, T. Mizuniwa, M. Abe, and T. Ohmi, “Particle-free Wafer Cleaning
and Drying Technology,” IEEE Trans. Semiconductor Manufacturing, Vol. 2, No. 3, pp.
69-75, August 1989.
1

Prof. Ohmi’s Paper

64(L)M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma, “Control Factor of NativeOxide Growth on Silicon in Air or in Ultrapure Water,” Appl. Phys. Letters, Vol. 55, No. 6,
pp. 562-564, August 1989.

65(C)Tatsuyuki Saito, Tadahiro Ohmi, Tadashi Shibata, Masahito Otsuki, and Takahisa Nitta,“Thermal Stability Studies on Copper Thin Films Formed by a Low-kinetic-energy Particle
Process,” Extended Abstracts, the 21st Conference on Solid State Devices and Materials,
Tokyo, pp. 25-28, August 1989.

66(C)Takashi Matsuura, Hiroaki Uetake, Junichi Murota, Kouichi Fukuda, Tadahiro Ohmi, Nobuo
Mikoshiba, Tadashi Kawashima, and Yoshihiro Yamashita, “Perfect-selectivity DirectionalEtching of Silicon Using Ultraclean ECR Plasma,” Extended Abstracts, the 21st Conference
on Solid State Devices and Materials, Tokyo, pp. 149-152, August 1989.

67(C)Kazuo Tsubouchi, Kazuya Masu, Masanori Tanaka, Yohei Hiura, Tadahiro Ohmi, Nobuo
Mikoshiba, Shigeki Hayashi, Takao Marui, Akira Teramoto, Tetsuo Kajikawa and Hiroyoshi
Soejima, “Development of Scanning-RHEED Microscopy for Imaging Poly-crystal Grain
Structure in LSI,” Extended Abstracts, the 21st Conference on Solid State Devices andMaterials, Tokyo, pp. 217-220, August 1989.

68(C)Y. Ishihara, A. Okita, K. Yoshikawa, T. Shibata, T. Ohmi, T. Nitta, J. Sugiura, and N.
Ohwada, “Reverse-bias Current Reduction in Low- temperature-annealed pn Junctions
Using a UHV Ion-Implanter,” Extended Abstracts, the 21st Conference on Solid State
Devices and Materials, Tokyo, pp. 421-424, August 1989.

69(C)K. Sugiyama, T. Ohmi, N. Miki, and Y.Nakahara, “Outgas-free, Corrosion-free Metal
Surface for ULSI Manufacturing,” Extended Abstracts, the 21st Conference on Solid State
Devices and Materials, Tokyo, pp. 425-428, August 1989.

70(M)Toshihito Takenami, Hitoshi Inaba, and Tadahiro Ohmi, “Total System Cost EffectivenessMust Keep Pace with Submicron Manufacturing,” Microcontamination, Vol. 7, No. 8, pp.
25-56, August 1989.

71(C)

H. Kikuyama, N. Miki, M. Miyashita, I. Kawanabe, and T. Ohmi, “Cleanliness Technologyof Chemicals,” Proceedings of the Abstracts, Second Symposium on Particles in Gases andLiquids: Detection, Characterization and Control, Boston, August 1989.

72(C)M. Yasuda and T. Ohmi, “Micro Vibration in Semiconductor Manufacturing,” Proceedingsof the Abstracts, Second Symposium on Particles in Gases and Liquids: Detection,Characterization and Control, Boston, August 1989.

73(C)T. Takenami, H. Inaba, and T. Ohmi, “Super Clean Room System Based on Power Saving
Concept,” Proceedings of the Abstracts, Second Symposium on Particles in Gases andLiquids: Detection, Characterization and Control, Boston, August 1989.

74(L)Y. Ishihara, A. Okita, K. Yoshikawa, T. Shibata, and T. Ohmi, “Formation of Low Reverse
Current Ion-implanted n+p Junctions by Low-temperature Annealing,” Appl. Phys. Letters,Vol. 55, No. 10, pp. 966-968, September 1989.

75(M)Tadahiro Ohmi and Masashi Yasuda, “Evaluating Passive and Active Microvibration
Control Technologies,” Microcontamination, Vol. 7, No. 9, pp. 23-30, 90-98, September
1989.

76(C)

N. Miki and T. Ohmi, “Ultra Pure Liquid Chemicals --Hydrofluoric Acid--,” Technical
Proceedings, SEMICON/EAST 89, Boston, pp. 26-35, September 1989.

77(C)Mizuho Morita, Tadahiro Ohmi, and Eiji Hasegawa, “Ultra Clean Oxidation of Si Surface,”
Abstracts, Sixth International Symposium on Passivity, Sapporo, Abstract No. S2-1,September 1989.

77-2(E)

M. Morita, T. Ohmi, and E. Hasegawa, “Ultra Clean Oxidation of Si Surface,” H.
Hasegawa and T. Sugano, eds., Passivation of Metals and Semiconductors, Part II Passivityof Semiconductors, pp. 143-148, Pergamon Press, Oxford, New York, Beijing, Frankfurt,
Sao Paulo, Tokyo, and Toronto, 1990.
2

Prof. Ohmi’s Paper

78(C)N. Miki, M. Maeno, K. Maruhashi, Y. Nakagawa, and T. Ohmi, “Fluorine Passivation ofMetal Surface for Semiconductor Equipments Having Self-cleaning Function,” Abstracts,Sixth International Symposium on Passivity, Sapporo, Abstract No. P2-3, September 1989.

78-2(E)

N. Miki, M. Maeno, K. Maruhashi, Y. Nakagawa and T. Ohmi, “Fluorine Passivation ofStainless Steel,” H. Hasegawa and T. Sugano, eds., Passivation of Metals andSemiconductors, Part I Passivity of Semiconductors, pp. 69-74, Pergamon Press, Oxford,
New York, Beijing, Frankfurt, Sao Paulo, Tokyo, and Toronto, 1990

79(C)Haruo Tomari, Fumihiro Satoh, Makoto Terada, Hiroshi Satoh, Tadahiro Ohmi, andYoshiyuki Nakahara, “The Effect of Dry Passivation and Structure of Surface Oxide Filmon Release and Structure of Surface Oxide Film on Electropolished Stainless Steel,”
Abstracts, Sixth International Symposium on Passivity, Sapporo, Abstract No. M8-6,
September 1989.

80(C)Tadahiro Ohmi, “Proposal for Advanced Semiconductor Manufacturing Equipment -An
Approach to Automated IC Manufacturing-,” Extended Abstracts, 176th Electrochemical
Society Meeting, Hollywood, Abstract No. 337, pp. 484-485, October 1989.

80-2(E)

Tadahiro Ohmi, “Proposal for Advanced Semiconductor Manufacturing Equipment-An
Approach to Automated IC Manufacturing-,” V. Akins, ed., Automated Integrated Circuits
Manufacturing, PV90-3, pp. 3-18, The Electrochemical Society, Pennington, NJ, 1990.

81(C)K. Sugiyama, T. Ohmi, Y. Mizuguchi, and F. Nakahara, “Ultra Clean Gas Delivery System
for Advanced Submicron ULSI Manufacturing,” Extended Abstracts, 176th Electrochemical
Society Meeting, Hollywood, Abstract No. 352, pp. 510-511, October 1989.

81-2(E)

Kazuhiko Sugiyama, Tadahiro Ohmi, Yasumitsu Mizuguchi, and Fumio Nakahara, “UltraClean Gas Delivery System for Advanced Submicron ULSI Manufacturing,” V.Akins, ed.,Automated Integrated Circuits Manufacturing, PV90-3, pp. 148-172, The Electrochemical
Society, Pennington, NJ, 1990.

82(C)T. Ohmi, N. Miki, H. Kikuyama, I. Kawanabe and M. Miyashita, “Wafer Dry Cleaning
Using Diluted Anhydrous Hydrogen Fluoride Gas,” Extended Abstracts, 176th
Electrochemical Society Meeting, Hollywood, Abstract No. 389, pp. 567-568, October
1989.

82-2(E)

T. Ohmi, N. Miki, H. Kikuyama, I. Kawanabe, and M. Miyashita, “Wafer Dry Cleaning
Using Diluted Anhydrous Hydrogen Fluoride Gas,” J. Ruzyllo and R. E. Novak, eds.,
Semiconductor Cleaning Technology/1989, PV90-5, pp. 95-104, The Electrochemical
Society, Pennington, NJ, 1990.

83(C)

N. Yabumoto, K. Minegishi, K. Saito, Mizuho Morita and Tadahiro Ohmi, “An Analysis
for Cleaned Silicon Surface with Thermal Desorption Spectroscopy,” Extended Abstracts,
176th Electrochemical Society Meeting, Hollywood, Abstract No. 407, pp. 592-593,
October 1989.

83-2(E)

Noriyuki Yabumoto, Kazushige Minegishi, Kazuyuki Saito, Mizuho Morita and TadahiroOhmi, “An Analysis for Cleaned Silicon Surface with Thermal Desorption Spectroscopy,”
J. Ruzyllo and R. E. Novak, eds., Semiconductor Cleaning Technology/1989, PU90-5, pp.
265-272, The Electrochemical Society, Pennington, NJ, 1990.

84(C)M. Maeno, Nobuhiro Miki and Tadahiro Ohmi, “Fluoride Passivation of Stainless Steel,”
Microcontamination 89 Conference Proceedings, Anaheim, pp. 49-56, October 1989.

85(C)Y. Mizuguchi, K. Sugiyama, and T. Ohmi, “Welding Technology for Passivated TubingSystems,” Microcontamination 89 Conference Proceedings, Anaheim, pp. 57-64, October
1989.

86(C)

Henry Berger, Fumio Nakahara, Tadahiro Ohmi, Kazuhiko Sugiyama, Yasumitsu
Mizuguchi, Masakazu Nakamura, Hiroshi Mihira, and Kiyoshi Sato, “High Purity Gas
dilution System and its Evaluation by APIMS,” Microcontamination 89 Conference
Proceedings, Anaheim, pp. 65-79, October 1989.

3Prof. Ohmi’s Paper

87(C)T. Ohmi, Y. Kanno and, S, Mizogami, “Plastic Material-Free and Oxygen-Passivated Gas
Tubing System for Ultra-Clean Process Environment,” Microcontamination 89 Conference
Proceedings, Anaheim, pp. 80-89, October 1989.

88(M)Tadahiro Ohmi, Hitoshi Inaba and Toshihito Takenami, “Research on Adhesion of Particles
to Charged Wafers Critical in Contamination Control,” Microcontamination, Vol. 7, No. 10,pp. 29-32, 86-97, October 1989.

89(C)

H. Inaba, T. Takenami and T. Ohmi, “Particle Adhesion to Electrostatically-ChargedWafer,” Abstracts, American Association for Aerosol Research, Reno, pp. 196, October
1989.

90(C)

T. Takenami, Hitoshi Inaba, and Tadahiro Ohmi, “Evaluation of Particle Diffusion from
Personal and Air Flow Distribution in the Clean Room,” Abstracts, American Association
for Aerosol Research, Reno, pp. 342, October 1989.

91(M)Tadahiro Ohmi, “Ultraclean Technology: Innovation for Semiconductor Manufacturing,”
Solid State Technology, Vol. 32, No. 10, pp. S1-S6, October 1989.

92(C)Tadahiro Ohmi, “UHV Environment for Advanced ULSI Manufacturing,” Final Program,
American Vacuum Society 36th National Symposium, Boston, pp. 230, October 1989.

93(C)K. Sugiyama, T. Ohmi, Y. Nakahara, and Nobuhiro Miki, “Outgas-Free and Corrosion-Free
Metal Surface Treatment for UHV Equipment,” Final Program, American Vacuum Society
36th National Symposium, Boston, pp. 281, October 1989.

94(C)Tadahiro Ohmi, “Ultra Clean Technology and Its Impact on Future Production Structures,”Semiconductor Production, Trends in Manufacturing Equipment and Facilities, Munchen, pp.
7-8, November 1989.

95(M)Tadahiro Ohmi, Hitoshi Inaba, and Toshihito Takenami, “Preventing Electromagnetic
Interference Essential for ULSI E-Beam Performance,” Microcontamination, Vol. 7, No. 11,November 1989.

96(F)H. Mishima, Tadahiro Ohmi, T. Mizuniwa, and M. Abe, “Deposition Characteristics ofIsopropanol (IPA) and Moisture from IPA Vapor Dried Silicon Wafers,” IEEE Transactions
on Semiconductor Manufacturing, Vol. 2, No. 4, pp. 121-129, November 1989.

97(F)T. Ohmi, T. Ichikawa, H. Iwabuchi, and T. Shibata, “Formation of Device-Grade Epitaxial
Silicon Films at Extremely Low Temperature by Low-Energy Bias Sputtering,” Journal ofApplied Physics, Vol. 66, No. 10, pp. 4756-4766, November 1989.

98(C)Tadahiro Ohmi, “Proposal for Advanced Semiconductor Manufacturing Equipment -An
Approach to Automated IC Manufacturing-,” Proceeding, 10th Symposium on ULSI Ultra
Clean Technology, Advanced Semiconductor Manufacturing, Tokyo, III-1-3 - III-1-26,
November 1989.

99(F)T. Ohmi, M. Morita, G. Tei, T. Kochi, M. Kosugi, H. Kumagai, and Masaki Itoh, “SurfaceReaction Film Formation by Si2H6 Transfer at Molecular Flow,” Journal of theElectrochemical Society, Vol. 136, No. 11, pp. 3455-3458, November 1989.

100(F)

Kazuo Tsubouchi, Kazuya Masu, Masanori Tanaka, Yohei Hiura, Tadahiro Ohmi, Nobuo
Mikoshiba, Shigeki Hayashi, Takao Marui, Akira Teramoto, Tetsuo Kajikawa and Hiroyoshi
Soejima, “Development of Scanning-RHEED Microscopy for Imaging Polycrystal Grain
Structure in LSI,” Jpn. J. Appl. Phys., Vol. 28, No. 11, pp. L2075-L2077, November 1989.

101(C)Tadahiro Ohmi, “Future Trends and Applications of Ultra-Clean Technology,” TechnicalDigest, 1989 International Electron Devices Meeting, Washington, D.C., pp. 49-52,
December 1989.

102(C)Tadahiro Ohmi, Keiichi Hashimoto, Makoto Morita, and Tadashi Shibata,“In Situ-Doped
Epitaxial Silicon Film Growth at 250 C by an Ultra-Clean Low-Energy Bias Sputtering,”
Technical Digest, 1989 International Electron Devices Meeting, Washington, D.C., pp.
53-56, December 1989.

4

Prof. Ohmi’s Paper

103(C)Tadahiro Ohmi and Mizuho Morita, “Ultra-High Clean Oxides,” 20th IEEE Semiconductor
Interface Specialists Conference, Ft.Lauderdale, pp. V.1, December 1989.

104(M)Tadahiro Ohmi, Hitoshi Inaba, and Toshihito Takenami, “Using Water-Based Cooling
Systems In Cleanroom Environments,” Microcontamination, Vol. 7, No. 12, pp. 27-34,
December 1989.

5