Prof. Ohmi's Paper
January－December, 1995
E529(C)

T. Ohmi, Y. Okada, T. Yabune and K. Ohmi, “High Integrity Thin SiO2 Free
from Contamination and Micro-Roughness,” 22nd Annual Conference on the
Physics and Chemistry of Semiconductor Interfaces(PCSI-22), (1page),
Invited, Old Town Scottsdale, Arizona, January 1995.

E530(C)

Tadahiro Ohmi, “Advanced Sub-Half Micron Processing Based on
Ultraclean Technology,” Proceeding of the 12th Symposium on PLASMAPROCESSING, pp. 167-188, Sendai, Japan, January 1995.

E531 (F)

Hiroshi Nohira, Kenji Saito, Kenichi Sakusabe, Koji Makihara, Mizuho
Morita, Tadahiro Ohmi and Takeo Hattori, “Effect of Preoxide on the
Structure of Thermal Oxide,” Jpn. J. Appl. Phys., Vol. 34, Part. 1, No. 1, pp.
245-248, January 1995.

E532 (F)

Hideo Kosaka, Tadashi Shibata, Hiroshi Ishii and Tadahiro Ohmi, “An
Excellent Weight-Updating-Linearity EEPROM Synapse Memory Cell for
Self-Learning Neuron-MOS Neural Networks,” IEEE Trans. on Electron
Devices, Vol. 42, No. 1, pp. 135-143, January 1995.

E533 (F)Tadahiro Ohmi, K. Matsumoto, K. Nakamura, K. Makihara, J. Takano and K.
Yamamoto, “Influence of Silicon Wafer Surface Orientation on Very Thin
Oxide Quality,” J. Appl. Phys., Vol. 77, No. 3, pp. 1159-1164, January 1995.

E534(C)

Koji Kotani, Tadashi Shibata, Makoto Imai and Tadahiro Ohmi,“Clocked-Neuron-MOS
Logic
Circuits
EmployingAuto-Threshold-Adjustment,” Digest of Technical Papers, 1995 IEEE
International Solid-State Circuits Conference, Digest of Technical Papers, pp.
320-321, 388, San Francisco, February 1995.

E535(C)

Nobuhiro Miki, Matagoro Maeno, Toshiro Fukudome, Shin Sato, Koichi
Yabe, Takashi Imaoka,Toru Okouchi, Ikuo Sindo and Tadahiro Ohmi,“Reformation of the Entire Waste Chemical Disposal System for the
Semiconductor Manufacturing Wet Process Using Advanced Recovery
Technology of Pure Fluoride and Phosphate,” 1995 Semiconductor Pure
Water and Chemicals Conference, Santa Clara, pp. 113-130, February 1995.

E536(C)

Fumitomo Kunimoto, Masashi Nose and Tadahiro Ohmi, “TheState-of-the-Art Membrane Filter for Wet Chemicals Recirculating
Filtration,” 1995 Semiconductor Pure Water and Chemicals Conference,
Santa Clara, pp. 153-170, February 1995.

E537(C)

Hirohisa Kikuyama, Jun Takano, Masayuki Miyashita, Tatsuhiko Yabune,
Hiroto Izumi and Tadahiro Ohmi, “Optimization of Composition of Buffered
Hydrogen Fluoride for ULSI Processing,” 1995 Semiconductor Pure Water
and Chemicals Conference, Santa Clara, pp. 237-259, February 1995.

E538(C)

Masashi Nose, Senri Ojima, Kazuki Kubo and Tadahiro Ohmi, “Carbon
Contamination Free Silicon Wafer Surface,” 1995 Semiconductor Pure Water
and Chemicals Conference, Santa Clara, pp. 260-275, February 1995.

E539 (F)

Mauricio Massazumi Oka, Akira Nakada, Kazuo Tomita, Tadashi Shibata
and Tadahiro Ohmi, “Reducing Reverse-Bias Current in 450⁰C-Annealed n+p
Junction by Hydrogen Radical Sintering,” Jpn. J. Appl. Phys., Vol. 24, Part 1,
No. 2B, pp. 796-799, February 1995.

E540 (F)

Wataru Shindo, Masaki Hirayama and Tadahiro Ohmi, “Abrupt and Arbitrary
Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment
Process,” Jpn. J. Appl. Phys., Vol. 24, Part 1, No. 2B, pp. 800-803, February
1995.

E541 (F)Jinzo Watanabe, Yasuaki Kawai, Nobuhiro Konishi and Tadahiro Ohmi,“Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by
Low-Energy Ion-Assisted Oxidation,” Jpn. J. Appl. Phys., Vol. 24, Part 1, No.
2B, pp. 900-902, February 1995.

E542 (F)

Shuhei Kondo, Tadashi Shibata and Tadahiro Ohmi, “Superior
Generalization Capability of Hardware-Learning Algorithm Developed for
Self-Learning Neuron-MOS Neural Networks,” Jpn. J. Appl. Phys., Vol. 24,
Part 1, No. 2B, pp. 1066-1069, February 1995.

E543 (F)

Hitoshi Morinaga, Takashi Futatsuki, Tadahiro Ohmi, Eiji Fuchita, Masaki
Oda and Chikara Hayashi, “Behavior of Ultrafine Metallic Particles on
Silicon Wafer Surface,” Journal of Electrochemical Society, Vol. 142, No. 3,
pp. 966-970, March 1995.

E544 (F)M. Itano, T. Kezuka, M. Ishii, T. Unemoto, M. Kubo and Tadahiro Ohmi,“Minimization of Particle Contamination during Wet Processing of Si
Wafers,” Journal of Electrochemical Society, Vol. 142, No. 3, pp. 971-978,
March 1995.

E545(C)

Tadahiro Ohmi, “Ultraclean Processing for Future ULSI,” TechnicalConference, SEMICON/Europa, Geneva, Switzerland, April 1995.

E546(C)

Tadahiro Ohmi, “Evaluation of Industry-University Relationships,” Abstractsof Presentations, First International Conference on Evaluation of Research,
Technology and Development, (European Commission Directorate General
XII Science, Research and Development), (1page), Thessaloniki, Greece,
April 1995.

E547(C)

Tadahiro Ohmi, “Semiconductor Manufacturing Technology in the Year
2000,” 1995 Japanese Semiconductor Industry Conference, (Dataquest JapanK. K. ), Tokyo Hilton Hotel, pp. 0-61, April 1995.

E548(C)

Steven Verhaverbeke, Rochidi Messoussi, Hitoshi Morinaga and Tadahiro
Ohmi, “Recent Advances in Wet Processing Technology and Science,”
Ultraclean Semiconductor Processing Technology and Surface Chemical
Cleaning and Passivation, MRS Symposium Proceedings, Vol. 386, pp. 3-12,
1995.

E549(C)Yasuyuki Shirai, Seok-Kiu Lee, Shinji Miyoshi and Tadahiro Ohmi, “TheEvaluation of Thermal Decomposition Characteristics of Active Specialty
Gases on Various Metal Surfaces Using FT-IR Method,” 1995 Proceedings,
41st Annual Technical Meeting, Institute of Environmental Sciences,
Anaheim, California, pp. 17-21, April/May 1995.

E550(C)T. Kojima, S. Ojima, K. Kubo, T. Yabune and T. Ohmi, “Transportation
Technology of Si Wafer without Accompanying Carbon Contamination,”
1995 Proceedings, 41st Annual Technical Meeting, Institute ofEnvironmental Sciences, Anaheim, California, pp. 178-184, April/May 1995.

E551(C)

T. Suenaga, M. Nose, S. Ojima, K. Kubo and T. Ohmi, “Consideration for the
Sustenance of Surface Cleanliness in Wafer Transportation,” 1995
Proceedings, 41st Annual Technical Meeting, Institute of Environmental
Sciences, Anaheim, California, pp. 185-190, April/May 1995.

E552(C)S. Ojima, K. Kubo, M. Nose and T. Ohmi, “Establishment of Complete
Cleaning Technology for Hydrocarbon Contamination on Si Wafer Surface,”
1995 Proceedings, 41st Annual Technical Meeting, Institute ofEnvironmental Sciences, Anaheim, California, pp. 441-446, April/May 1995.

E553(C)H. Izumi, Y. Nakagawa, M. Nakamura and T. Ohmi, “Behavior of Adsorbed
Moisture on Solid Surfaces,” 1995 Proceedings, 41st Annual Technical
Meeting, Institute of Environmental Sciences, Anaheim, California, pp.
549-556, April/May 1995.

E554 (P)

T. Ohmi, Y. Okada, T.Yabune and K. Ohmi, “Highly Reliable Thin SiO2
Film Formation Technology,” Reliable of Metals in Electronics, Edited byHazara S. Rathore, PV95-3, The Electrochemical Society, Pennington, NJ, pp.
44-53, 1995.

E555(C)

K. Ino, K. Yamada, G. S. Jong and T. Ohmi, “Oxygen-Contamination-Free
Ultra-Low-Resistance Silicided Contact Technology for High Performance
Power Devices,” Proceedings, 7th International Symposium on Power
Semiconductor Devices & IC's (ISPSD'95 ), Yokohama, pp. 434-437, May
1995.

E556(C)

T. Takewaki, H. Yamada, T. Shibata, T. Ohmi and T. Nitta, “Excellent
Electron/Stress-Migration-Resistance Giant-Grain Copper Interconnect
Technology for High-Performance Power Devices,” Proceedings, 7thInternational Symposium on Power Semiconductor Devices & IC's
(ISPSD’95), Yokohama, pp. 438-442, May 1995.

E557 (F)K. Tomita, T. Migita, S. Shimonishi, T. Shibata and T. Ohmi, “Eliminating
Metal-Sputter
Contaminationin
Ion
Implanter
for
Low-Temperature-Annealed, Low-Reverse-Bias-Current Junctions,” Journalof Electrochemical Society, Vol. 142, No. 5, pp. 1692-1698, May 1995.

E558(C)

T. Takewaki, T. Ohmi and T. Nitta, “A Novel Self-Aligned Surface-Silicide
Passivation Technology for Reliability Enhancement in CopperInterconnects,” Digest of Technical Papers, 1995 Symposium on VLSITechnology, Kyoto, pp. 31-32, June 1995.

E559(C)

Wataru Shindo and Tadahiro Ohmi, “Low-Energy Large-Mass Ion
Bombardment Process for Low-Temperature High-Quality Silicon Epitaxy,”
Digest of Technical Papers, 1995 Symposium on VLSI Technology, Kyoto,pp. 93-94, June 1995.

E560(C)Tadahiro OHMI, “Integrating Intelligence on Silicon Electronic Systems-An Inter-University Cooperative Research Project for Innovative Process,Device, Circuit, and System Technologies,” Digest of Technical Papers, 1995
Symposium on VLSI Circuits, Kyoto, pp. 1-4, Invited Paper, June 1995.

E561 (M)

T. Ohmi, “Novel Surface Cleaning Technology,” Semiconductor
Fabtech(I.C.G.Publishing Ltd.), Issue No. 2, pp. 79-82, 1995.

E562 (F)Tadahiro Ohmi, “Very High Quality Thin Gate Oxide Formation
Technology,” Journal of Vacuum Science and Technology A, Vol. 13, No. 3,
pp. 1665-1670, May/June 1995.

E563(C)

Tadahiro OHMI, Yasuyuki SHIRAI, Masaki NARAZAKI, and Tsutomu
KOJIMA, “Advanced Gas Technology for Semiconductor and Liquid Crystal
Process in The 21st Century,” OSK-Semiconductor Seminar(Osaka Sanso
Kogyo K. K. ), pp. 55-74, June 1995.

E564(C)

O. Tatsumi, K. Ino, A. Ichikawa, N. Nakano, and T. Ohmi, “New
Planarization Technique Using Ion-Assisted Low-Temperature Surface
Reflow of BPSG Film,” Digest of Papers, MicroProcess'95 (The 8thInternational MicroProcess Conference), Sendai, pp. 90-92, July 1995.

E565(C)A. Ichikawa, K. Nakano, T. Sanbei, and T Ohmi, “Extremely High Selective
Etching of Silicon over Resist in Nitrogen-added Trichlorophosphorus
Plasma,” Digest of Papers, MicroProcess'95 (The 8th International
MicroProcess Conference), Sendai, pp. 98-99, July 1995.

E566(C)

Tadahiro OHMI, Koji KOTANI, and Hisayuki SHIMADA, “Prospects to
X-Ray and EUV Lithography,” Digest of Papers, XEL'95(1995 International
Workshop on X-ray and Extreme Ultraviolet Lithography), Osaka, pp.
M-1-1-1 - M-1-1-9, July 1995.

E567 (F)Tsutomu KOJIMA, Masakazu NAKANURA, Yasuyuki SHIRAI, Masaki
NARAZAKI, and Tadahiro OHMI, “Silane Gas Interactions with Various
Silicon Surface,” Technical Report of IECE, SDM95-56, ICD95-65, pp.
21-27, July 1995.

E568 (F)Kazuhide INO, Iwao NATORI, Akihiko ICHIKAWA, Raymond N. VRTIS,
and Tadahiro OHMI, “In Situ Chamber Self-Cleaning Technology using NF3
Plasma,” Technical Report of IECE, SDM95-75, ICD95-84, pp. 37-43, July
1995.

E569 (F)Tsutomu NAKAI, Tadashi SHIBATA, Takeo YAMASHITA, and Tadahiro
OHMI, “A Neuron-MOS Data Sorting Circuit,” Technical Report of IECE,
SDM95-83, ICD95-92, pp. 87-92, July 1995.

E570 (F)M. Imai, K. Kotani, T. Shibata, and T. Ohmi, “Clocked Neuron-MOS Circuit
Technology for Highly-Reliable Logic Operations,” Technical Report of
IECE, SDM95-84, ICD95-93, pp. 93-98, July 1995.

E571 (F)Senri OJIMA, Kazuki KUBO, Hiroto IZUMI, Masashi NOSE, Tadahiro
OHMI, and Masayuki TODA, “Advanced Wet Cleaning of Wafers with
Reduced Chemicals and DI Water Consumption,” Technical Report of IECE,
SDM95-86, ICD95-95, pp. 105-112, July 1995.

E572 (F)TADAHIRO OHMI, SHINJI MIYOSHI, YASUYUKI SHIRAI, TSUTOMU
KOJIMA, and YASUMITSU MIZUGUCHI, “Metal Fume-Free Welding
Technology for Advanced Semiconductor Grade Gas Delivery System,”
Journal of Electrochemical Society, Vol. 142, No. 7, pp. 2362-2372, July
1995.

E573 (F)

Tadashi Shibata, Hideo Kosaka, Hiroshi Ishii, and Tadahiro Ohmi, “A
Neuron-MOS Neural Network Using Self-Learning-Compatible Synapse
Circuits,” IEEE Journal of Solid-State Circuits, Vol. 30, No. 8, pp. 913-922,
August 1995.

E574(C)

Tadahiro OHMI and Tadashi SHIBATA, “Four-Terminal Device Electronics
for Intelligent Silicon Integrated System,” Extended Abstract, 1995
International Conference on Solid State Devices and Materials, Osaka, pp.
1-3, Invited, August 1995.

E575(C)

K. OHMI, T. Iwamoto, T. Yabune, T.Miyake, and T. Ohmi, “Formation
Process of Highly Reliable Ultra-Thin Gate Oxide,” Extended Abstract, 1995
International Conference on Solid State Devices and Materials, Osaka, pp.
258-260, August 1995.

E576(C)

Akira NAKADA, Mauricio Massazumi OKA, Yukio TAMAI, Tadashi
SHIBATA, Herzl AHARONI, and Tadahiro OHMI, “Effect of Substrate
Boron Concentration on the Integrity of 450 C-Annealed Ion-Implanted
Junctions,” Extended Abstract, 1995 International Conference on Solid State
Devices and Materials, Osaka, pp. 366-368, August 1995.

E577(C)

Mikihiro KIMURA and Tadahiro OHMI, “Time-Dependent Dielectric
Degradation (TDDD) Influenced by Ultraclean Oxidation Process,” Extended
Abstract, 1995 International Conference on Solid State Devices and Materials,
Osaka, pp. 461-463, August 1995.

E578(C)H. Izumi, M. Nose, S. Ojima, K. Kubo, and T. Ohmi, “The Cleaning ofParticle and Metallic Impurity on Si Wafer Surface by Fluorine Etchant,”
Extended Abstract, 1995 International Conference on Solid State Devices andMaterials, Osaka, pp. 620-622, August 1995.

E579(C)

Kazuhide INO and Tadahiro OHMI, “Modeling and Analysis of RF Plasma
Using Electrical Equivalent Circuit,” Extended Abstract, 1995 International
Conference on Solid State Devices and Materials, Osaka, pp. 644-646,
August 1995.

E580(C)

Yashuyuki Shirai, Masakazu Nakamura, and Tadahiro Ohmi, “Specialty Gas
Interactions with Various Silicon Surfaces,” Extended Abstract, 1995
International Conference on Solid State Devices and Materials, Osaka, pp.
929-931, August 1995.

E581(C)

Tadahiro OHMI and Tadashi SHIBATA, “Intelligence Implementation on
Silicon Based on Four-Terminal Device Electronics,” Proceedings, 20th
International Conference on Microelectronics (MIEL'95), Vol. 1, pp. 11-18,
Invited Keynote Paper, Nis, Serbia, September 1995.

E582(C)

Tadahiro Ohmi, “Low Cost Production by Simplified Processing,”
International Symposium on Semiconductor Manufacturing, Proceedings
ISSM '95, pp. 277-282, Invited Paper, Austin, Texas, September 1995.

E583(C)

Masaki Hirayama, Kazuhide Ino, and Tadahiro Ohmi, “Analysis of RF
Plasma Using Electrical Equivalent Circuit,” International Symposium on
Semiconductor Manufacturing, Proceedings ISSM '95, pp. 283-286, Austin,
Texas, September 1995.

E584(C)T. Shibata, K. Ino, N. Konishi, T. Ohmi, C. Urano, and H. Enosawa,“Through-UHV-Pump Impurity Back Diffusion Under Large Gas Flow andIts Minimization,” International Symposium on Semiconductor
Manufacturing, Proceedings ISSM '95, (4 pages), Austin, Texas, September
1995.

E585 (F)T. Takewaki, H. Yamada, T. Shibata, T. Ohmi, and T. Nitta, “Formation of
Giant-Grain Copper Interconnects by a Low-Energy Ion Bombardment
Process for High-Speed ULSIs,” Journal of Materials Chemistry and Physics,
Vol. 41, pp. 182-191, 1995.

E586(C)

H. Shimada, T. Ushiki, Y. Hirano, and T. Ohmi, “Tantalum-Gate SOIMOSFET's Featuring Excellent Threshold Voltage Control in Low-Power
Applications,” Proceedings, 1995 IEEE International SOI Conference, pp.
96-97, Tucson, Arizona, October 1995.

E587(C)

H. Shimada and T. Ohmi, “Minimum Parasitic Resistance for Ultra-Thin SOIMOSFET with High-Permitivity Gate Insulator Performed by Lateral Contact
Structure,” Proceedings, 1995 IEEE International SOI Conference, pp. 98-99,
Tucson, Arizona, October 1995.

E588-1(C)

T. Ohmi, “Proposal of Advanced Wet Cleaning of Silicon Surface,”
Extended Abstracts, 188th Electrochemical Society Meeting, Chicago,
Illinois, Abstract No. 429, pp. 680-681, Invited, October 1995.

E588-2 (P)Tadahiro Ohmi, “Proposal of Advanced Wet Cleaning of Silicon Surface,”
Cleaning Technology in Semiconductor Device Manufacturing, Edited by
Richard E. Novak and Jerzy Ruzyllo, PV95-20, The Electrochemical Society,
Pennington, NJ, pp. 1-12, 1996.

E589(C)H. Izumi, M. Nose, S. Ojima, K. Kubo, and T. Ohmi, “Removal of Particle
and Metallic Impurity on Si Wafer Surface by Fluorine Etchant,” Extended
Abstracts, 188th Electrochemical Society Meeting, Chicago, Illinois, Abstract
No. 442, pp. 704-705, October 1995.

E590-1(C)M. TODA, M. KATO, K. KUBO, S. OJIMA, and T. OHMI, “Radical
Activation of DI Water and Cleaning Solution by Megasonic,” Extended
Abstracts, 188th Electrochemical Society Meeting, Chicago, Illinois, Abstract
No. 444, pp. 708-709, October 1995.

E590-2 (P)Masayuki TODA, Masayuki KATO, Kazuki KUBO, Senri OJIMA, andTadahiro OHMI, “Radical Activation of DI Water and Cleaning Solution by
Megasonic,” Cleaning Technology in Semiconductor Device Manufacturing,
Edited by Richard E. Novak and Jerzy Ruzyllo, PV95-20, The
Electrochemical Society, Pennington, NJ, pp. 99-106, 1996.

E591-1(C)K. KUBO, S. OJIMA M. TODA, and T. OHMI, “Study on Megasonic in
Advanced Wet Cleaning Process,”
Extended Abstracts, 188th
Electrochemical Society Meeting, Chicago, Illinois, Abstract No. 445, pp.
710-711, October 1995.

E591-2 (P)K. Kubo, S. Ojima, M. Toda, and T. Ohmi, “Study on Megasonic in
Advanced Wet Cleaning Process,” Cleaning Technology in Semiconductor
Device Manufacturing, Edited by Richard E. Novak and Jerzy Ruzyllo,
PV95-20, The Electrochemical Society, Pennington, NJ, pp. 107-114, 1996.

E592-1(C)Yasuyuki Shirai, Masakazu Nakamura, and Tadahiro Ohmi, “Specialty Gas
Interactions with Ultraclean Silicon Surfaces,” Extended Abstracts, 188th
Electrochemical Society Meeting, Chicago, Illinois, Abstract No. 464, pp.
734-735, October 1995.

E592-2 (P)Yasuyuki Shirai, Masakazu Nakamura, and Tadahiro Ohmi, “Specialty Gas
Interactions with Ultraclean Silicon Surfaces,” Cleaning Technology in
Semiconductor Device Manufacturing, Edited by Richard E. Novak and Jerzy
Ruzyllo, PV95-20, The Electrochemical Society, Pennington, NJ, pp.
251-256, 1996.

E593-1(C)

Hitoshi Morinaga and Tadahiro Ohmi, “Electrochemical Deposition andRemoval of Metallic Impurities on Si Surfaces,” Extended Abstracts, 188th
Electrochemical Society Meeting, Chicago, Illinois, Abstract No. 465, pp.
736-737, Invited, October 1995.

E593-2 (P)Hitoshi Morinaga and Tadahiro Ohmi, “Electrochemical Deposition andRemoval of Metallic Impurities on Si Surfaces,” Cleaning Technology in
Semiconductor Device Manufacturing, Edited by Richard E. Novak and Jerzy
Ruzyllo, PV95-20, The Electrochemical Society, Pennington, NJ, pp.
257-268, 1996.

E594(C)

M. Nose, H. Izumi, S. Ojima, K. Kubo, and T. Ohmi, “The Deposition
Mechanism of Metal onto Si Surface in Cleaning Solution,” Extended
Abstracts, 188th Electrochemical Society Meeting, Chicago, Illinois, Abstract
No. 469, pp. 743-744, October 1995.

E595-1(C)

M. Meuris, H. Izumi, T. Ohmi, and M. M. Heyns, “Determination of the
H-Passivation Build-Up Time in DHF-Treatments,” Extended Abstracts,
188th Electrochemical Society Meeting, Chicago, Illinois, Abstract No. 492,
pp. 782-783, October 1995.

E595-2 (P)M. Meuris, H. Izumi, K. Kubo, S. Ojima, T. Ohmi, and M. M. Heyns,“Determination of the H-Passivation Build-Up Time in DHF-Treatments,”
Cleaning Technology in Semiconductor Device Manufacturing, Edited by
Richard E. Novak and Jerzy Ruzyllo, PV95-20, The Electrochemical Society,
Pennington, NJ, pp. 444-448, 1996.

E596(P)

Tadahiro Ohmi, “Advanced Plasma Processing with Accurately Controlled
Ion Flux and Energy,” Proceedings, the 3rd IUMRS International Conferencein Asia(IUMRS-ICA-'95), Fabrication and Characterization of Advanced
Materials, Edited by S. W. Kim and S. J. Park, pp. 3-9, Plenary Lecture,
Seoul, Korea, October 1995.

E597(M)

TADAHIRO OHMI, “High-Quality, High-Reliability, Low-Cost, Ultraclean
Gas Distribution System,” Semiconductor Fabtech, Global Issues & New
Developments in Semiconductor Manufacturing, (I. C. G. Publishing Ltd.),
Issue No. 3, pp. 153-162, 1995.

E598(C)

Tadahiro Ohmi, “Future Manufacturing Technology in the year 2000,”
Proceedings of SPIE, Microelectronic Device and Multilevel Interconnection
Technology, Vol.2636, pp. 16-22, Invited, Austin, Texas, October 1995.

E599(M)Tadahiro Ohmi, “Ultra-Clean Processing for ULSI,” Microelectronics Journal,
Vol.26, pp. 595-619, (1995 Elsevier Science Ltd. )E600(M)

Tadahiro Ohmi, “-Gas Tubing System- Corrosion-Free Cr2O3 Passivated Gas
Tubing System for Specialty Gases,” CLEANROOMS(in collaboration with
Solid State Technology), Gas Handling and Delivery, pp. S18-S22, October
1995.

E601(P)

Tadashi Shibata and Tadahiro Ohmi, “Neurontransistor:- A Neuron-Like
High-Functionality Transistor Implementing Intelligence on Silicon,”
Proceedings, VLSI Signal Processing VIII, Edited by Takano Nishitani and
Keshab K. Parhi, (Published under the sponsorship of the IEEE Signal
Processing Society, pp. 28-37, October 1995.InvitedE602(W)

Yasuhiko Kasama, Tadahiro Ohmi, Koichi Fukuda, Hirobumi Fukui, Chisato
Iwasaki, Shoich Ono, “Improvemant of PECVD-SiNx for TFT Gate Insulator
by Controlling Ion Bomberdment Energy,” the 6th Microelectronics
Conference Proceeding, pp.179-186, November 1995.

E603(W)

Fumitomo Kunimoto and Tadahiro Ohmi, “Rapid Metal Removing by Spin
Clearning Process,” the 6th Microelectronics Conference Proceeding,
pp.189-198, November 1995.

E604(W)

K. Kubo, S. Ojima, Y. Sakata, M. Toda, M. Kato, and T. Ohmi, “Character
Change of Ultrapure Water with Megasonic in New Wet Cleaning Process”,
the 6th Microelectronics Conference proceeding, pp.227-233, November
1995.

E605(C)

F. Kunimoto, T. Ohmi, and M. Toda, “Characterization of Radical ActivatedWafer Spin Cleaning Process,” Abstracts, Materials Research Society 1995
Fall Meeting, AA4. 2, pp. 662, Boston, November-December 1995.

E606(C)

Takashi Imaoka, Ken-ichi Mitsumori, Masayuki Toda, and Tadahiro Ohmi,“Improved Wet Cleaning Process Technology Using Electrolytic Ionized
Water for Advanced TFT-LCD Manufacturing,” Abstracts, Materials
Research Society 1995 Fall Meeting, AA4. 3, pp. 662, Boston,November-December 1995.

E607-1(C)Yasuhiko Kasama, Tadahiro Ohmi, Koichi Fukuda, Hirobumi Fukui, Chisato
Iwasaki, and Shoichi Ono, “Improvement of PECVD-SiNx for TFT Gate
Insulator by Controlling Ion Bombardment Energy,” Abstracts, Materials
Research Society 1995 Fall Meeting, BB7. 9, pp. 674, Boston,November-December 1995.

E607-2(C)Yasuhiko Kasama, Tadahiro Ohmi, Koichi Fukuda, Hirobumi Fukui, Chisato
Iwasaki, and Shoichi Ono, “Improvement of PECVD-SiNx for TFT Gate
Insulator by Controlling Ion Bombardment Energy,” Materials ResearchSociety Symposium Proceedings, Vol. 415, pp. 57-64, 1996.

E608(C)

T. Takewaki, R. Kaihara, T. Ohmi, and T. Nitta, “Excellent
Electro/Stress-Migration-Resistance Surface-Silicide Passivated Giant-Grain
Cu-Mg Alloy Interconnect Technology for Giga Scale Integration (GSI),”
Technical Digest, International Electron Devices Meeting 1995, Washington,
DC, pp. 253-256, December 1995.

E609(C)

Hisayuki SHIMADA, Yuichi HIRANO, Takeo USHIKI, and Tadahiro
OHMI, “Threshold Voltage Adjustment in SOI MOSFET's by Employing
Tantalum for Gate Material,” Technical Digest, International Electron
Devices Meeting 1995, Washington, DC, pp. 881-884, December 1995.