Prof. Ohmi's Paper
January－December, 2011
E1482 (W)

X. Li, R. Kuroda, T. Suwa, A. Teramoto, S. Sugawa, and T. Ohmi, “High reliable SiO2
Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing,”
Extend Abstracts of 2011 Interanational Workshop on Dielectric Thin Films For FutureElectron Devices: Science and Technology (IWDTF), pp.107-108, January 2011.

E1483 (F)

Tetsuya Goto, Nobuaki Seki, Yasuyuki Shirai, and Tadahiro Ohmi, “Study of theReflectivity of Silver Films Deposited by Radio Frequency and Direct Current Coupled
Magnetron Sputtering,” Japanese Journal of Applied Physics, Vol.50, No.1, 015801, January2011.

E1484-1（C）

Tadahiro Ohmi, “Science Based New Silicon Technologies Exhibiting Super High
Performance due to Radical Reaction Based Semiconductor Manufacturing,” The 18th
Korean Conference on Semiconductors, pp.12-13, Jeju, Plenary Speech, February 2011.

E1484-2(F)Tadahiro Ohmi, Hiroaki Tanaka and Tomoyuki Suwa, Xiang Li and Rihito Kuroda,“Science-based New Silicon Technologies Exhibiting Super High Performance due to
Radical-reaction-based Semiconductor Manufacturing,” Journal of the Korean PhysicalSociety, Vol.59, No.2, pp.391-401, August 2011.

E1485(C)Youn-Geun Kim, Shin-ichiro Kobayashi, Rui Wen, Kohei Yasuda, Tomoyuki Suwa, Rihito
Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, and Kingo Itaya, “Observation ofSingle Atomic Steps on an Ultra-Flat Si(100) Surface by a Differential Intereference
Contrast Microscope,” The 2011 WPI-AIMR Anuual Workshop, pp. 73, P-31, Sendai,
February 2011.

E1486(C)Qiu Chen, Koji Kotani, Feifei Lee and Tadahiro Ohmi, “SIFT Features Using Vector
Quantization histogram for Image Retrieval,” 2011 3rd International Conference on Signal
Acquisition and Processing (ICSAP 2011), V2-122-V2-126, Singapore, February 2011.

E1487(C)

Feifei Lee, Koji Kotani, Qiu Chen, Tadahiro Ohmi, “Face Recognition Algorithm Based on
Adjacent Pixel Intensity Difference Quantization in Rectangular Coordinate Plane,” 2011 3rd
International Conference on Signal Acquisition and Processing (ICSAP 2011),
V2-127-V2-130, Singapore, February 2011.

E1488 (F)

Masafumi Kitano, Hidekazu Ishii, Yasuyuki Shirai, and Tadahiro Ohmi,“High-corrosion-resistant Al2O3 passivation-film formation by selective oxidation on
austenitic stainless steel containing Al,” Journal of Vacuum Science & Technology A, Vol.
29, No.2, 021002, Mar/April 2011.

E1489（F）

Hirotada Inoue, Kouji Tanaka, Yuichi Sano, Takehiro Nishimura, Akinobu Teramoto,
Masaki Hirayama, and Tadahiro Ohmi, “High-Rate Deposition of Amorphous Silicon Films
by Microwave-Excited High-Density Plasma,” Japanese Journal of Applied Physics, Vol.50,
036502, March 2011.

E1490-1 (C)Xun Gu, Takenao Nemoto, Yugo Tomita, Ricardo Duyos Mateo, Akinobu Teramoto,Shin-Ichiro Kuroki, Shigetoshi Sugawa, and Tadahiro Ohmi, “Advanced Direct-polish
Process on Organic Non-porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects,”
China Semiconductor Technology International Conference 2011 (CSTIC 2011) Abstract,
March 2011.

E1490-2 (P)Xun Gu, Takenao Nemoto, Yugo Tomita, Ricardo Duyos Mateo, Akinobu Teramoto,Shin-Ichiro Kuroki, Shigetoshi Sugawa, and Tadahiro Ohmi, “Advanced Direct-polish
Process on Organic Non-porous Ultra Low-k Fluorocarbon Dielectric on Cu Interconnects,”
ECS Transactions, Vol.34, No.1, China Semiconductor Technology International
Conference 2011 (CSTIC 2011), pp.653-658, March 2011.

Prof. Ohmi’s Paper

Ｅ1491-1(C)Ricardo Duyos-Mateo, Xun Gu, Takenao Nemoto, Yun Zhuang, Yasa Sampurno, Ara
Philipossian, and Tadahiro Ohmi, “Tribological and Kinetical Analysis of Barrier Metal
Polishing for Next Generation Copper Interconnects,” China Semiconductor Technology
International Conference 2011 (CSTIC 2011) Abstract, March 2011.

E1491-2 (P)R. Duyos Mateo, X.Gu, T. Nemoto, S. Sugawa, Y. Zhuang, Y. Sampurno, A. Philipossian,and T. Ohmi, “Tribological and Kinetical Analysis of Barrier Metal Polishing for Next
Generation Copper Interconnects,” ECS Transactions, Vol.34, No.1, China Semiconductor
Technology International Conference 2011 (CSTIC 2011), pp.627-632, March 2011.

E1492(C)

Kenichi Abe, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “Understandingof Traps Causing Random Telegraph Noise Based on Experimentally Extracted Time
Constants and Amplitude,” IEEE 2011 International Reliability Physics Symposium, 4A.4,
Monterey, April 2011.

E1493 (F)Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Hiroaki Tanaka,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Analysis of the Low-Frequency Noise Reductionin Si(100) Metal-Oxide-Semiconductor Field-Effect Transistors,” Japanese Journal ofApplied Physics, Vol.50, No.4, 04DC01, April 2011.

E1494 (F)Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi, “Impact ofChannel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon
Surface,” Japanese Journal of Applied Physics, Vol.50, No.4, 04DC03, April 2011.

E1495 (F)Tadahiro Ohmi, Tetsuya Goto, Hiroshi Imai, Masahiko Sugimura and Osamu Kawashima,“Proposal of Very High Performance and High Density Printed Wiring Board and Its VeryHigh Productivity Manufacturing Processes,” IEEE Transactions on Components, Packagingand Manufacturing Technology, Vol.1, No.4, pp.486-494, April 2011.

E1496-1(C)Hidetoshi Wakamatsu, Akinobu Teramoto, and Tadahiro Ohmi, “Pr3Si6N11/Si3N4 Stacked
High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers,” 219th
Meeting of The Electrochemical Society, Abs.1142, USB, Montreal, May 2011.

E1496-2(P)Tadahiro Ohmi, Hidetoshi Wakamatsu, and Akinobu Teramoto, “Pr3Si6N11/Si3N4 Stacked
High-k Gate Dielectrics with High Quality Ultrathin Si3N4 Interfacial Layers,” ECS
Transactions, Vol.35, No.2 Silicon Compatible Materials, Processes, and Technologies for
Advanced Integrated Circuits and Emerging Applications, pp.275-284, May 2011.

E1497-1(C)Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita,
Tadahiro Ohmi, Takeo Hattori, “Clear difference between the chemical structure of SiO2/Si
interface formed using oxygen radicals and that formed using oxygen molecules,” 219th
Meeting of The Electrochemical Society, Abs.1348, USB, Montreal, May 2011.

E1497-2 (P)Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita,
Tadahiro Ohmi, and Takeo Hattori, “Clear Difference between the Chemical Structure of
SiO2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules,” ECS
Transactions, Vol.35, No.4, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11,
pp.115-122, May 2011.

E1498(C)X. Gu, T. Nemoto, Y. Tomitta, A. Shirotori, R. Duyos-Mateo, K. Miyatani, A. Saito, Y.
Kobayashi, A. Teramoto, S. Kuroki, T. Nozawa, T. Matsuoka, S. Sugawa, and T. Ohmi, “CuDamascene Interconnects with an Organic Low-k Fluorocarbon Dielectric Deposited byMicrowave Excited Plasma Enhanced CVD,” 2011 IEEE International Interconnect
Technology Conference (IITC), Poster No. 44, Dresden, May 2011.

E1499 (F)Xun Gu, Takenao Nemoto, Yugo Tomita, Akihide Shirotori, Kotaro Miyatani, Akane Saito,
Yasuo Kobayashi, Akinobu Teramoto, Shin-Ichiro Kuroki, Toshihisa Nozawa, Takaaki
Matsuoka, Shigetoshi Sugawa, and Tadahiro Ohmi, “Electrical Characteristics of Novel
Non-porous Low-k Dielectric Fluorocarbon on Cu Interconnects for 22 nm Generation and
Beyond,” Japanese Journal of Applied Physics, Vol.50, No.5, 05EB02, May 2011.

Prof. Ohmi’s Paper

E1500 (F)Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shigetoshi Sugawa, andTadahiro Ohmi, “Tribological Effects of Brush Scrubbing in Post Chemical Mechanical
Planarization Cleaning on Electrical Characteristics in Novel Non-porous Low-k Dielectric
Fluorocarbon on Cu Interconnects,” Japanese Journal of Applied Physics, Vol.50, No.5,
05EC07, May 2011.

E1501 (F)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “A Fast Search Method for DNA
Sequence Database Using Histogram Information,” International Journal of Bioinformatics
Research, Vol. 3, Issue 1, pp. 161-166, May 2011.

E1502(C)K. Nagata, M. Hattori, D. Kosemura, M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, T.
Suwa, A. Teramoto, T. Hattori, T. Ohmi, “Structural analysis of atomically flat SiO2/Si
interface using CTR scattering under the 110 forbidden reflection,” E-MRS ICAM IUMRS
2011 Spring Meeting, Nice, May 2011.

E1503（L）

Shin-Ichiro Kobayashi, Youn-Geun Kim, Rui Wen, Kohei Yasuda, Hirokazu Fukidome,
Tomoyuki Suwa, Rihito Kuroda, Xiang Li, Akinobu Teramoto, Tadahiro Ohmi, and Kingo
Itaya, “Visualization of Single Atomic Steps on An Ultra-Flat Si(100) Surface by Advanced
Differential Interference Contrast Microscopy,” Electrochemical and Solid-State Letters,
Vol.14, Issue 9, pp. H351-H353, June 2011.

E1504 (W)

Tadahiro Ohmi, “Science Based New Silicon Technologies Exhibiting Super High Speed
Performance Over 100GHz Clock Rate,” 30th Electronic Materials Symposium Extended
Abstracts, pp.Ⅴ-Ⅵ, Shiga, Commemorative Lecture, June 2011.

E1505 (W)

T. Suwa, A. Teramoto, T. Ohmi, and T. Hattori, “Clear Difference between the Chemical
Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules,”2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices (AWAD 2011), pp51-53, Korea, June 2011.

E1506（C）

Tetsuya Goto and Tadahiro Ohmi, “Study of Target Erosion Profile and Plasma
Characteristics of Rotation Magnet Sputtering Using Three-Dimensional Particle in Cell
Simulation,” The Eleventh International Symposium on Sputtering and Plasma Process(ISSP 2011), pp.259-262, Kyoto, July 2011.

E1507(C)Naoto Miyamoto, Hanpei Koike, Yohei Matsumoto, Tadayuki Matsumura, Kenichi Osada,
Yaoko Nakagawa, Keisuke Toyama, and Tadahiro Ohmi, “Performance Comparison of 2D
and 3D FPGAs using True-3D CAD Tool,” The 54th IEEE International Midwest
Symposium on Circuits and Systems, Mp1E-5, USB, Seoul, August 2011.

E1508(C)Xun Gu, Yugo Tomita, Takenao Nemoto, Kotaro Miyatani, Akane Saito, Yasuo Kobayashi,
Akinobu Teramoto, Rihito Kuroda, Shin-Ichiro Kuroki, Toshihisa Nozawa, Takaaki
Matsuoka, Shigetoshi Sugawa, and Tadahiro Ohmi, “Process Optimization for Improved
Compatibility with Organic Non-porous Low-k Dielectric Fluorocarbon on advanced Cu
Interconnects,” Advanced Metallization Conference 2011: 21st Asian Session, pp.20-21,
September 2011.

E1509(C)Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita,
Shigetoshi Sugawa, Takeo Hattori, and Tadahiro Ohmi “Clear Difference between Chemical
Structure of SiO2/Si Interface Formed Using Oxygen Radicals and That Formed Using
Oxygen Molecules,” Extended Abstracts of the 2011 International Conference on SOLID
STATE DEVICES AND MATERIALS, P-1-8, pp.22-23, Nagoya, September 2011.

E1510(C)Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa and Tadahiro Ohmi, “Evidence of
the universality of the hole mobility in accumulation MOS transistors,” Extended Abstractsof the 2011 International Conference on SOLID STATE DEVICES AND MATERIALS,
P-3-16, pp.114-115, Nagoya, September 2011.

E1511(C)

Hiroshi Kambayashi, Takehoko Nomura, Sadahiro, Kato, Hirokazu Ueda, Akinobu
Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi, “High Integrity SiO2 Gate Insulator
Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si
Substrate,” Extended Abstracts of the 2011 International Conference on SOLID STATE
DEVICES AND MATERIALS, A-8-1, pp.600-601, Nagoya, September 2011.

Prof. Ohmi’s Paper

E1512(C)T. Inatsuka, Y. Kumagai, R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi, “Recovery
Characteristic of Anomalous Stress Induced Leakage Current of 5.6nm Oxide Films,”
Extended Abstracts of the 2011 International Conference on SOLID STATE DEVICES
AND MATERIALS, D-2-4, pp.841-842, Nagoya, September 2011.

E1513(C)

Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Shigetoshi
Sugawa, and Tadahiro Ohmi, “Impact of Random Telegraph Noise Reduction with Buried
Channel MOSFET,” Extended Abstracts of the 2011 International Conference on SOLID
STATE DEVICES AND MATERIALS, D-5-1, pp.851-852, Nagoya, September 2011.

E1514(C)Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa andTadahiro Ohmi, “On the Si Surface Flattening Effect and Gate Insulator Breakdown
Characteristic of Radical Reaction Based Insulator Formation Technology,” Extended
Abstracts of the 2011 International Conference on SOLID STATE DEVICES AND
MATERIALS, E-3-3, pp.903-904, Nagoya, September 2011.

E1515(C)Y. Nakao, R. Kuroda, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi, “High Quality and
Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide
Block and Contact Etch Stopper,” Extended Abstracts of the 2011 International Conference
on SOLID STATE DEVICES AND MATERIALS, E-3-4, pp.905-906, Nagoya, September
2011.

E1516 (F)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “A Fast Search Algorithm for
MPEG Video Using Multiple Histogram Descriptors,” International Journal of DigitalContent Technology and its Applications（JDCTA）, Vol.5, No.9, pp.164-171, September
2011.

E1517 (F)Xiang Li, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa,Tadahiro Ohmi, “Formation speed of atomically flat surface on Si(100) in ultra-pure argon,”
Microelectronic Engineering, Vol.88, Issue 10, pp.3133-3139, October 2011.

E1518(F)Yuki Kumagai, Akinobu Teramoto, Takuya Inatsuka, Rihito Kuroda, Tomoyuki Suwa,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Evaluation for Anomalous Stress Induced Leakage
Current of Gate SiO2 Films using Array Test Pattern,” IEEE Transactions on Electron
Devices, Vol.58, No.10, pp.3307-3313, October 2011.

E1519-1（C）

A. Teramoto, X. Li, R. Kuroda, T. Suwa, S. Sugawa, and T. Ohmi, “Gate SiO2 Film Integrity
on Ultra-Pure Argon Anneal (100) Silicon Surface,” 220th Meeting of The Electrochemical
Society, Abs.2123, USB, Boston, October 2011.

E1519-2（P）

Akinobu Teramoto, Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Shigetoshi Sugawa, andTadahiro Ohmi, “Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon
Surface,” ECS Transactions, Vol.41, No.7 ULSI Process Integration 7, pp.147-156, October
2011.

E1520-1 (C)H. Tanaka, A. Teramoto, R. Kuroda, Y. Nakao, T. Suwa, S. Sugawa, and T. Ohmi,“Different properties of erbium silicides on Si(100) and Si(551) orientation surfaces,” 220th
Meeting of The Electrochemical Society, Abs.2159, USB, Boston, October 2011.

E1520-2（P）

Hiroaki Tanaka, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Tomoyuki Suwa,
Kazumasa Kawase, Shigetoshi Sugawa, and Tadahiro Ohmi, “Different Properties of Erbium
Silicides on Si(100) and Si(551) Orientation Surfaces,” ECS Transactions, Vol.41, No.7
ULSI Process Integration 7, pp.365-373, October 2011.

E1521-2（C）

H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto, S.
Sugawa, and T. Ohmi, “High power normally-off GaN MOSFET on Si substrate,” 220th
Meeting of The Electrochemical Society, Abs.2172, USB, Boston, October 2011.

E1521-2(P)(Invited) H. Kambayashi, Y. Satoh, T. Kokawa, N. Ikeda, T. Nomura, S. Kato, A. Teramoto,
S. Sugawa, and T. Ohmi, “High power normally-off GaN MOSFET,” ECS Transactions,Vol.41, No.8 Gallium Nitride and Silicon Carbide Power Technologies, pp.87-100, October
2011.

Prof. Ohmi’s Paper

E1522(F)Xun Gu, Takenao Nemoto, Akinobu Teramoto, Misa Sakuragi, Shigetoshi Sugawa, andTadahiro Ohmi, “Tribological Study of Brush Scrubbing in Post-Chemical Mechanical
Planarization Cleaning in Non-porous Ultralow-k Dielectric/Cu Interconnects,” Journal of
The Electrochemical Society, Volume 158, Issue 11, pp. H1145-H1151, October 2011.

E1523(F)Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Rihito Kuroda, Naoto
Miyamoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi,“Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability
and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics,”
Japanese Journal of Applied Physics, Vol.50, No.10, 106701, October 2011.

E1524 (F)Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa,Tadahiro Ohmi, “Highly Reliable Radical SiO2 Films on Atomically Flat Silicon Surface
Formed by Low Temperature Pure Ar Annealing,” Japanese Journal of Applied Physics,
Vol.50, No, 10, 10PB05, October 2011.

E1525 (W)

Tetsuya Goto, Akihiko Hiroe, Hiroshi Imai, Masahiko Sugimura, Osamu Kawashima,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Development of Rotation Magnet Sputtering and
Its Application to Cu Interconnect Fabrications for Printed Wiring Board,” The 23rd
International Micro Electronics Conference Proceeding, pp.1-9, November 2011.

E1526 (W)

Kazuki Soeda, Ryosuke Hiratsuka, Kazuhiro Yoshikawa, Tatsuro Yoshida, Takeshi Sakai,
and Tadahiro Ohmi, ”High Speed and Precision Silicon Wafer Thinnig Wet Etching
Technology for Three-Dimensional Integrated Circuit,” The 23rd International Micro
Electronics Conference Proceeding, pp.11-16, November 2011.

E1527(W)Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Rihito Kuroda, Shin-Ichiro
Kuroki, Shigetoshi Sugawa, and Tadahiro Ohmi, “A Study on Integration Technology of
Non-porous Low-k Dielectric Fluorocarbon into Multilayer Cu Interconnects,” The 23rd
International Micro Electronics Conference Proceeding, pp.17-25, November 2011.

E1528(W)

Masamichi Iwaki, Hirohisa Imada, Tsutomu Yoshida, Yasuyuki Shirai and Tadahiro Ohmi,“Thermal Decomposition Properties of Elastomer O-rings,” The 23rd International Micro
Electronics Conference Proceeding, pp.27-32, November 2011.

E1529 (W)Yuki Kumagai, Takuya Inatsuka, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto,
Shigetoshi Sugawa, and Tadahiro Ohmi, “Statistical Evaluation of Leakage Current of Gate
Insulator Film,” The 23rd International Micro Electronics Conference Proceeding, pp.33-38,
November 2011.

E1530(C)Xun Gu, Yugo Tomita, Takenao Nemoto, Akinobu Teramoto, Ricardo Duyos Mateo,
Takeshi Sakai, Rihito Kuroda, Shigetoshi Sugawa, and Tadahiro Ohmi, “Development of
Direct-polish Process of CMP and Post-CMP Clean for Next Generation Advanced Cu
Interconnects,” Proceedings of International Conference on Planarization/CMP Technology
2011, pp.150-157, Seoul, November 2011

E1531(P)Feifei Lee, Qiu Chen, Koji Kotani, and Tadahiro Ohmi, “An Improved Fast Video Clip
Search Algorithm for Copy Detection Using Histogram-based Features,” World Academy of
Science, Engineering and Technology 59 2011, (2011 International Conference on Signal
Processing), pp. 219-223, Paris, November 2011.

E1532(P)Qiu Chen, Feifei Lee, Koji Kotani, and Tadahiro Ohmi, “Local Image Descriptor Using
VQ-SIFT for Image Retrieval,” World Academy of Science, Engineering and Technology
59 2011, (2011 International Conference on Computer and Information Science), pp.
622-626, Paris, November 2011.

E1533(C)Qiu Chen, Koji Kotani, Feifei Lee, and Tadahiro Ohmi, “An Improved Face Recognition
Algorithm Using Quantized DCT Coefficients,” 2011 Seventh International Conference on
Signal Image Technology & Internet-Based Systems”, pp.329-333, Dijon, November 2011.

E1534(C)

Feifei Lee, Koji Kotani, Qiu Chen, and Tadahiro Ohmi, “A Robust Face Recognition
Algorithm Using Markov Stationary Features and Adjacent Pixel Intensity Difference
Quantization Histogram,” 2011 Seventh International Conference on Signal Image
Technology & Internet-Based Systems, pp.334-339, Dijon, November 2011.

Prof. Ohmi’s Paper

E1535(F)

Feifei Lee, Koji Kotani, Qiu Chen, Tadahiro Ohmi, “An Improved Face Recognition
Algorithm Using Adjacent Pixel Intensity Difference Quantization,” International Journal ofAdvancements in Computing Technology (IJACT), Volume3, Number10, pp.155-162,
November 2011.

E1536(C)Akihiko Hiroe, Tetsuya Goto, Tadahiro Ohmi, “Annealing Behavior of a-IGZO Film
Deposited by Rotation Magnet Sputtering,” The 18th International Display Workshops(IDW’11), FMCp-13, pp.665-668, Nagoya, December 2011.

E1537 (F)Sadaharu Morishita, Tetsuya Goto, Yasuyuki Shirai and Tadahiro Ohmi, “Gas Flow
Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas
Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas
Pressure,” Japanese Journal of Applied Physics, Vol.51, No.1, 016001, December 2011.

E1538 (L)P. GAUBERT A. TERAMOTO and T. OHMI, “1/F CHANNEL NOISE AT HIGH DRAIN
CURRENT IN MOS TRANSISTORS,” Fluctuation and Noise Letters, Volume10, No.4,
pp.431-445, December 2011.