Prof. Ohmi's Paper
January－December, 1998
E753 (C)Tadahiro OHMI and Masaki Hirayama, “Next Generation TFT Production
Line and Technologies,” 1998 Display Manufacturing Technology
Conference, pp. 1-2, San Jose, invited, January 1998.

E754 (F)Nobukazu Ikeda, Yasuyuki Shirai, Tadahiro Ohmi, and Michio Yamaji,“Highly reliable fitting for gas delivery systems,” J. Vac. Sci. Technol. A,Vol. 16, No. 1, pp. 181-187, January/February 1998.

E755 (M)Tadahiro Ohmi, Kazuhide Ino, Katsuyuki Sekine, and Tadashi Shibata,“Developing an ultraclean pumping system for low-pressure, high-gas-flow
applications,” MICRO, Vol. 16, No. 2, pp. 53-61, February 1998.

E756 (C)Toshihiro Ii, Kazuhiko Kawada, Hiroshi Morita, Masatoshi Hashino, Noboru
Kubota, and Tadahiro Ohmi, “The Removal of Colloidal and Metallic
Impurities in UPW by Hollow Fiber Type Membrane Module,”1998
Semiconductor Pure Water and Chemicals Conference, pp. 43-57, Santa
Clara, March 1998.

E757 (C)Takayuki Jizaimaru, Hiroaki Kanetaka, Syunkichi Omae, and Tadahiro Ohmi,“Mechanism of Potassium Adhesion to CVD Oxide and Cleaning with HotUPW,” 1998 Semiconductor Pure Water and Chemicals Conference, pp.
281-291, Santa Clara, March 1998.

E758 (C)Nakamori Mitsunori, Kazuhiko Kawada, Hiroshi Morita, Shouichi Okano,
Takahisa Nitta, and Tadahiro Ohmi, “The Quick Cleaning by the Spin
Cleaner Based on UCT Cleaning Concept,” 1998 Semiconductor Pure
Water and Chemicals Conference, pp. 309-321, Santa Clara, March 1998.

E759 (F)Kei Kanemoto, Akira Nakada, and Tadahiro Ohmi, “Minimization of BF2+Implantation Dose to Reduce the Annealing Time for Ultra-Shallow
Source/Drain Junction Formation below 600℃,” Jpn. J. Appl. Phys., Vol.
37, No.3B, pp. 1166-1170, March 1998.

E760 (F)

Hiroyuki Komeda, Tohru Ueda, Sakae Wada, and Tadahiro Ohmi, “GasChemistry Dependence of Si Surface Reaction in a Fluorocarbon Plasma
during Contact Hole Etching,” Jpn. J. Appl. Phys., Vol. 37, No. 3B, pp.
1198-1201, March 1998.

E761 (C)T. Ushiki, M. C. Yu, K. Kawai, T. Shinohara, K. Ino, M. Morita, and T.
Ohmi, “Reduction of Plasma-Induced Gate Oxide Damage Using
Low-Energy Large-Mass Ion Bombardment in Gate-Metal Sputtering
Deposition,” 1998 IEEE International Reliability Physics Symposium
Proceedings, pp. 307-311, Reno, Nevada, March-April 1998.

E762 (C)

Tatsuo Morimoto, Tadashi Shibata, and Tadahiro Ohmi, “Neuron-MOS
Continuous-Time Winner-Take-All Circuit for Intelligent Data Processing,”
1998 Second International Conference on Knowledge-Based Intelligent
Electronic Systems, pp. 436-441, Adelaide, Australia, April 1998.

E763(C)

Herzl Aharoni, Tadahiro Ohmi, Akira Nakada, Yukio Tamai, and Mauricio
Massazumi Oka, “Surface Currents in Shallow n+p Silicon Junctions Madeby Ultra Clean Technology,” Abstracts of The 44 th Annual Meeting of theIsrael Physical Society, Israel, p. 179, April 1998.

E764 (F)Ning Mei Yu, Tadashi Shibata, and Tadahiro Ohmi, “A Real-TimeCenter-of-Mass Tracker Circuit Implemented by Neuron MOS Technology,”IEEE Transactions on Circuits and Systems-II: Analog and Digital Signal
Processing, Vol. 45, No. 4, pp. 495-503, April 1998.

E765 (F)Koji Kotani, Tadashi Shibata, Makoto Imai, and Tadahiro Ohmi,“Clock-Controlled Neuron-MOS Logic Gates,” IEEE Transactions onCircuits and Systems-II: Analog and Digital Signal Processing, Vol. 45, No.
4, pp. 518-522, April 1998.

E766 (C)Takayuki Jizaimaru and Tadahiro Ohmi, “Environmental Friendly Total
Room Temperature Wet Cleaning Method for Si Surface,” Fifth International
Environment Safety & Health Conference of the Semiconductor Industry,Korea, May 1998.

E767 (C)T. Hashimoto, Y. Kishida, Y. Shirai, T. Ohmi, M. Itano, and H. Aoyama,“Process Gas Recycling System,” Fifth International Environment Safety &Health Conference of the Semiconductor Industry, Korea, May 1998.

E768 (F)Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi, “CMOS Charge-Transfer
Preamplifier for Offset-Fluctuation Cancellation in Low-Power A/DConverters,” IEEE Journal of Solid-State Circuits, Vol. 33, No. 5, pp.
762-769, May 1998.

E769 (F)M. Takeya, W. S. Park, G. S. Jong, and T. Ohmi, “Plasma conditions foras-grown low temperature poly-si formation on SiO2 substrate by sputteringand plasma enhanced chemical vapor deposition processes,” J. Vac. Sci.
Technol., Vol. A16, No. 3, pp. 1917-1920, May/June 1998.

E770 (C)Tadahiro Ohmi, “Message to ISPSD’98 Facing with 10th Anniversary,”
Proceeding of 1998 International Symposium on Power Semiconductor
Devices & ICs, p. 3, Kyoto, June 1998.

E771 (C)K. Ino, T. Ushiki, K. Kawai, I. Ohshima, T. Shinohara, and T. Ohmi,“Highly-reliable, Low-Resistivity bcc-Ta Gate MOS Technology Using
Low-Damage Xe-Plasma Sputtering and Si-Encapsulated Silicidation
Process,” Digest of Technical Papers, 1998 Symposium on VLSITechnology, pp. 186-187, Honolulu, June 1998.

E772 (F)Hajime Kumami, Wataru Shindo, Kazuhide Ino, and Tadahiro Ohmi,“Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration ina Low-Energy Ion Bombardment Process,” Jpn. J. Appl. Phys., Vol. 37, pp.
3268-3271, June 1998.

E773 (C)Kazuyuki Maruo, Takahiro Yamaguchi, Tadashi Shibata, and Tadahiro
Ohmi, “Automatic Defects Classification of LSI Wafer Using Advanced
Image Processing Techniques,” Silicon, Software, and Smart Machines:Manufacturing Integration in the Semiconductor Industry, Austin, June 1998.

E774 (C)

Masaki Hirayama, Kazuhide Ino, and Yasuyuki Shirai, “Low-cost,High-Productivity ULSI manufacturing in 300mm Wafer Era,” Silicon,Software, and Smart Machines: Manufacturing Integration in theSemiconductor Industry, Austin, June 1998.

E775 (M)

Masaki Hirayama and Tadahiro Ohmi, “New era of Semiconductor
Manufacturing(III),” Ultra Clean Technology, Vol. 10, Supplement 1, June
1998.

E776 (C)H. Kumami, W. Shindo, J. Kakuta, and T. Ohmi, “Plasma-Induced
Deactivation of P, B, Sb by Low-Energy (<30eV) Ion Bombardment During
Low-temperature Silicon Epitaxy,” Digest of Papers Microprocesses andNanotechnology ’98, pp. 27-28, Korea, July 1998.

E777 (C)Tadahiro Ohmi, Masaki Hirayama, Kazuhide Ino, and Yasuyuki Shirai,“Contamination Free Manufacturing for 300mm Wafer Processing,”
Semicon West 98:Symposium on Contamination - Free Manufacturing(CFM) for Semiconductor Processing, pp. A1-A19, San Francisco, keynote,
July 1998.

E778 (F)Kazuhide Ino, Katsuyuki Sekine, Tadashi Shibata, Tadahiro Ohmi, andYasushi Maejima, “Improvement of turbomolecular pumps for ultraclean,
low-pressure, and high-gas-flow processing,” J. Vac. Sci. Technol. A, Vol.
16, No. 4, pp. 2703-2710, July/August 1998.

E779(F)

Kazuhide Ino, Yoshiyuki Taniguchi, and Tadahiro Ohmi, “Formation ofUltra-Shallow and Low-Reverse-Bias-Current Tantalum-silicided Junctions
Using a Si-Encapsulated Silicidation Technique and Low-Temperature
Furnace Annealing below 550℃,” Jpn. J. Appl. Phys., Vol.37, Part 1, No. 8,
pp. 4277-4283, August 1998.

E780 (C)Tadahiro Ohmi and Masaki Hirayama, “A New Concept Cluster Tool with aradial Line Slot Antenna(RLSA) Plasma Source,” Extended Abstracts ofInternational Symposium on Advanced ULSI Technology - Challenges andBreakthroughs, pp. 19-22, Tokyo, September 1998.

E781(C)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi,“Low-temperature, Low-energy Plasma Nitridation of Silicon for Gate
Dielectrics,” Extended Abstracts of International Symposium on Advanced
ULSI Technology - Challenges and Breakthroughs, pp. 29-30, Tokyo,
September 1998.

E782-1 (C)Hiroshi Morita, Jun-ichi Ida, Tetsuo Mizuniwa, and Tadahiro Ohmi,“Hydrogenated Ultrapure Water Production System for Future Wet Cleaning
Process,” Fourth International Symposium on Ultra Clean Processing ofSilicon Surfaces(UCPSS’98), Abstract Book, pp. 3-4, Ostende, Belgium,
September 1998.

E782-2 (P)H. Morita, J. Ida, T. Mizuniwa and T. Ohmi, “Hydrogenated Ultrapure Water
Procuction System for Future Wet Cleaning Process,” Edited by M. Heyns,
M. Meuris and P. Mertens, Solid State Phenomena, Vols. 65-66, pp. 7-10,
1999

E783-1 (C)Takayuki Jizaimaru, Hiroaki Kanetaka, Syunkichi Omae, and Tadahiro Ohmi,“Potassium Adhesion to various CVD Oxide and the surface cleaning with
hot UPW,” Fourth International Symposium on Ultra Clean Processing ofSilicon Surfaces(UCPSS’98), Abstract Book, pp. 26-27, Ostende, Belgium,
September 1998.

E783-2 (P)T. Jizaimaru, H. Kanetaka, S. Omae, and T. Ohmi, “Potassium Adhesion tovarious CVD Oxide and the Surface Cleaning with Hot UPW,” Edited by M.
Heyns, M. Meuris and P. Mertens, Solid State Phenomena, Vols. 65-66, pp.
67-70, 1999.

E784-1 (C)K. Kanetaka, T. Kujime, H. Yazaki, T. Kezuka, and T. Ohmi, “Influence ofthe dissolved gas in cleaning solution on Si wafer cleaning efficiency,”
Fourth International Symposium on Ultra Clean Processing of SiliconSurfaces(UCPSS’98), Abstract Book, pp. 54-55, Ostende, Belgium,September 1998.

E784-2 (P)H. Kanetaka, T. Kujime, H. Yazaki, T. Kezuka, and T. Ohmi, “Influence ofthe dissolved gas in cleaning solution on Silicon wafer cleaning efficiency,”
Edited by M. Heyns, M. Meuris and P. Mertens, Solid State Phenomena,
Vols. 65-66, pp. 43-48, 1999.

E785-1 (C)M. Yoshida, Y. Shirai, M. Nagase, M. Kitano, M. Gozyuki, Y. Hashimoto,and T. Ohmi, “Construction of the Distribution System for Ozonized Water
Used in the Wet cleaning of Si-Wafer Surfaces,” Fourth International
Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS’98),
Abstract Book, pp. 68-69, Ostende, Belgium, September 1998.

E785-2 (P)O. Nakamura, M. Yoshida, Y. Shirai, M. Nagase, M. Kitano, M. Gozyuki, Y.
Hashimoto, and T.Ohmi, “Construction of the Distribution System for
Ozonized Water Used in the Wet cleaning of Si-Wafer Surface,” Edited byM. Heyns, M. Meuris and P. Mertens, Solid State Phenomena, Vols. 65-66,
pp. 161-164, 1999.

E786-1 (C)M. Mayusumi, M. Imai, S. Nakahara, K. Inoue, J. Takahashi, and T. Ohmi,“Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth,”
Fourth International Symposium on Ultra Clean Processing of Silicon
Surfaces(UCPSS’98), Abstract Book, pp. 104-105, Ostende, Belgium,
September 1998.

E786-2 (P)M. Mayusumi, M. Imai, S. Nakahara, K. Inoue, J. Takahashi, and T. Ohmi,“Silicon Surface Cleaning for Low Temperature Silicon Epitaxial
Growth,”Edited by M. Heyns, M. Meuris and P. Mertens, Solid State
Phenomena, Vols. 65-66, pp. 229-232, 1999.

E787 (C)Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, and Tadahiro Ohmi,“Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation
Employing High-Density and Low-Energy Ion Bombardment,” Extended
Abstracts of the 1998 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 24-25, Hiroshima, September 1998.

E788 (C)Shin-ichi Nakao, Masaki Numata, and Tadahrio Ohmi, “ThinLow-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grgain
Copper Interconnects for Advanced ULSI Metallization,” Extended
Abstracts of the 1998 International Conference on SOLID STATE
DEVICES and MATERALS, pp. 262-263, Hiroshima, September 1998.

E789 (C)Tadahiro Ohmi, “New Developments in Ultraclean Technologies,” World
Market Series Business Briefing ASEAN: Semiconductor Manufacturing
Technology---An analysis of the Semiconductor Manufacturing technology
Industry in the ASEAN region and perspective on the future, US-ASEAN
Business Council, pp. 88-91.1998.

E790 (F)

Katsuhisa Ogawa, Tadashi Shibata, Tadahiro Ohmi, Motomu Takatsu, andNaoki Yokoyama, “Multiple-Input Neuron MOS Operational Amplifier for
Voltage-Mode Multivalued Full Adders,” IEEE Transactions on Circuits andSystems- II; Analog and Digital Signal Processing, Vol. 45, No. 9, pp.
1307-1311, September 1998.

E791 (F)

T. Ohmi, M. Yoshida, Y. Matudaira, Y. Shirai, O. Nakamura, M. Gozyuki,
and Y. Hashimoto, “Development of a stainless steel tube resistant tocorrosive Cl2 gas for use in semiconductor manufacturing,” J. Vac. Sci.
Technol. B, Vol. 16, No. 5, pp. 2789-2795, September/October 1998.

E792(C)

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi,“Direct Nitridation of Silicon Surface Ultra-Low-Temperature byHigh-Density and Low-Energy Ion Bombardment,” The SeventhInternational Symposium on Semiconductor Manufacturing, Proceeding ofISSM98, pp. 145-148, Tokyo, October 1998.

E793 (C)Toshikuni Shinohara and Tadahiro Ohmi, “High Efficiency Energy Supply
System Employing Co-generation and Latent Thermal Storage for Low
Running Cost Cleanroom Operation,” The Seventh International Symposium
on Semiconductor Manufacturing, Proceeding of ISSM98, pp. 196-199,Tokyo, October 1998.

E794(C)

Daiji Nakajima, Yoshio Ishihara, and Tadahiro Ohmi, “Economical Clean
Dry Air System for Closed Manufacturing System,” The SeventhInternational Symposium on Semiconductor Manufacturing, Proceeding ofISSM98, pp. 412-415, Tokyo, October 1998.

E795 (C)

Hiroshi Morita, Jun-ichi Ida, Tetsuo Mizuniwa, Norikuni Yabumoto, Sonomi
Kushibe, and Tadahiro Ohmi, “Dissolved-Gas Controlled Ultrapure Water
Production System for Wet Cleaning Processes,” The Seventh International
Symposium on Semiconductor Manufacturing, Proceeding of ISSM98, pp.
428-431, Tokyo, October 1998.

E796(C)

W. Shindo, S. Sakai, W. S. Park, and T. Ohmi, “Low-Temperature(300 ℃ )Large-Grain
Polycrystalline
Silicon
Deposition
byMicrowave-Excited PECVD Using SiH4/Xe,” The Seventh International
Symposium on Semiconductor Manufacturing, Proceeding of ISSM98, pp.
460-463, Tokyo, October 1998.

E797 (F)Atsushi Ohki, Tadahiro Ohmi, Junichi Date, and Takahiko Kijima, “HighlyPurified Silane Gas for Advanced Silicon Semiconductor Devices,” J.
Electrochem. Soc., Vol. 145, No.10, pp. 3560-3569, October 1998.

E798 (C)K. Sekine, R. Kaihara, Y. Saito, M. Hirayama, and T. Ohmi,“Ultra-Low-Temperature Growth of High-Integrity Silicon Oxide andNitride Films by High-Density Plasma with Low Bombardment Energy,”
Abstract, AVS 45th International Symposium, p. 25, Baltimore, November
1998.

E799 (C)W. Shindo, S. Sakai, and T. Ohmi, “Low-Temperature Large-Grain
As-Deposited Poly-Si Formation by Microwave-Excited PECVD Using
SiH4/Xe,” Abstract, AVS 45th International Symposium, p. 25, Baltimore,
November 1998.

E800 (C)R. Kaihara, T. Ohmi, H. Komeda, Y. Hirayama, and M. Hirayama,“Balanced Electron Drift Magnetron Plasma Source for Uniform SiO2Etching,” Abstract, AVS 45th International Symposium, p.25, Baltimore,November 1998.

E801 (C)Y. Shirai, O. Nakamura, N. Ikeda, R. Dohi, and T. Ohmi, “Precise Control ofGas Ratio in Process Chamber,” Abstract, AVS 45th International
Symposium, p. 25, Baltimore, November 1998.

E802(C)

K. Ando, I. Akutsu, and T. Ohmi, “Gradational Lead Screw PumpDevelopment,” Abstract, AVS 45th International Symposium, pp. 25-26,
Baltimore, November 1998.

E803 (F)

Takeo Ushiki, Kunihiro Kawai, Mo-Chiun Yu, Toshikuni Shinohara,Kazuhide Ino, Mizuho Morita, and Tadahiro Ohmi, “Improvement of Gate
Oxide Reliability for Tantalum-Gate MOS Devices Using Xenon Plasma
Sputtering Technology,” IEEE Transaction Electron Devices, Vol. 45, No.
11, pp. 2349-2354, November 1998.

E804 (W)

Geun-Min Choi, Katsuyuki Sekine, Hiroshi Morita, Jong-Soo Kim, andTadahiro Ohmi, “The Nature of Metallic Contamination and Removal
Efficiency on Crystalline and Amorphous Silicon Substrates”, the 9th
Microelectronics Conference Proceeding, pp.7-13, November 1998.

E805 (W)

T. Ushiki, M.C. Yu, K. Kawai, T. Shinohara, K. Ino, M. Morita, and T.
Ohmi “Reduction of Plasma-Induced Gate Oxide Damage Using
Low-Energy Large-Mass Ion Bombardment in Gate-Metal Sputtering
Deposition”, the 9th Microelectronics Conference Proceeding, pp.45-46,November 1998.

E806 (W)

Kazuhide Ino, “低抵抗 bcc-Ta を用いたメタルゲート MOS デバイス技術”,
the 9th Microelectronics Conference Proceeding, pp.49-59, November 1998.