Prof. Ohmi's Paper
January－December, 1992
251-1(C)

Masanori Sugisawa, Yoshinori Kajiyama, Kenichi Ushikoshi, Akihiko Hogetsu,
and Tadahiro Ohmi, “Oxygen Passivated Stainless Steel (GOLD EP) for High
Temperature and Ozone Injected Ultrapure Water,” Conference Abstracts, 1992
Semiconductor Pure Water and Chemicals Conference, Santa Clara, pp. 17,
February 1992.

251-2(C)

Masanori Sugisawa, Yoshinori Kajiyama, Kenichi Ushikoshi, Akihiko Hogetsu,
and Tadahiro Ohmi, “Oxygen Passivated Stainless Steel for High-Temperature
and Ozone-Injected Ultrapure Water,” Water Proceedings, 1992 Semiconductor
Pure Water and Chemicals Conference, Santa Clara, pp. 108-127, February
1992.

252-1(C)Nobuhiro Miki, Toshiro Fukudome, Matagoro Maeno, and Tadahiro Ohmi,“Closed System Processing Technology of Fluorine Chemicals for Advanced
Semiconductor Manufacturing,” Conference Abstracts, 1992 Semiconductor
Pure Water and Chemicals Conference, Santa Clara, pp. 29-30, February 1992.

252-2(C)Nobuhiro Miki, Matagoro Maeno, Toshiro Fukudome, and Tadahiro Ohmi,“Closed System Processing Technology of Fluorine Chemicals for Advanced
Semiconductor Manufacturing,” Chemical Proceedings, 1992 Semiconductor
Pure Water and Chemicals Conference Santa Clara, pp. 24-43, February 1992.

253-1(C)Takashi Imaoka, Takehiko Kezuka, Jun Takano, Masahiko Kogure, Tatsuhiko
Isagawa, Hisayuki Shimada, and Tadahiro Ohmi, “The Segregation andRemoval of Metallic and Organic Impurities from Interface of Silicon andLiquid Chemicals,” Conference Abstracts, 1992 Semiconductor Pure Water andChemicals Conference, Santa Clara, pp. 40-41, February 1992.

253-2(C)Takashi Imaoka, Takehiko Kezuka, Jun Takano, Masahiko Kogure, Tatsuhiko
Isagawa, Hisayuki Shimada, and Tadahiro Ohmi, “The Segregation andRemoval of Metallic and Organic Impurities from Interface of Silicon andLiquid Chemicals,” Chemical Proceedings, 1992 Semiconductor Pure Water
and Chemicals Conference, Santa Clara, pp. 162-190, February 1992.

254-1(C)Jun Takano, Masakazu Nakamura, Akinobu Teramoto, Takashi Imaoka,
Masahiko Kogure, and Tadahiro Ohmi, “Process Performance byHydrogen-Terminated Silicon Surface,” Conference Abstracts, 1992
Semiconductor Pure Water and Chemicals Conference, Santa Clara, pp. 43,
February 1992.

254-2(C)Jun Takano, Masakazu Nakamura, Akinobu Teramoto, Takashi Imaoka,
Masahiko Kogure, and Tadahiro Ohmi, “Process Performance ofHydrogen-Terminated Silicon Surface,” Chemical Proceedings, 1992
Semiconductor Pure Water and Chemicals Conference, Santa Clara, pp.
199-223, February 1992.

255-1(C)Tatsuhiko Isagawa, Masahiko Kogure, Takashi Imaoka, and Tadahiro Ohmi,“Ozone Added Ultrapure Water Applications for ULSI Advanced Processing,”
Conference Abstracts, 1992 Semiconductor Pure Water and Chemicals
Conference, Santa Clara, pp. 44, February 1992.

255-2(C)

Tatsuhiko Isagawa, Masahiko Kogure, Takashi Imaoka, and Tadahiro Ohmi,“Ozone Added Ultrapure Water Applications for ULSI Advanced Processing,”
Chemical Proceedings, 1992 Semiconductor Pure Water and Chemicals
Conference, Santa Clara, pp. 224-247, February 1992.

256(C)Tadahiro Ohmi, “Reliability Improvement due to Scientific Manufacturing
Technology Based on the Concept of Ultra Clean,” Tutorial Notes 1992, IEEE
International Reliability Physics Symposium, San Diego, pp. 1.1-1.15, March
1992.

257(F)Tadahiro Ohmi, Masayuki Miyashita, Mitsushi Itano, Takashi Imaoka, andIchiroh Kawanabe, “Dependence of Thin-Oxide Films Quality on Surface
Microroughness,” IEEE Trans. on Electron Devices, Vol. 39, No. 3, pp.
537-545, March 1992.

258(F)

Takahisa Nitta, Tadahiro Ohmi, Masahito Otsuki, Toshiyuki Takewaki, andTadashi Shibata, “Electrical Properties of Giant-Grain Copper Thin Films
Formed by a Low Kinetic Energy Particle Process,” Journal of theElectrochemical Society, Vol.139, No. 3, pp. 922-927, March 1992.

259(F)Tadahiro Ohmi and Kazuo Tsubouchi, “Advanced Copper Metallization
Technology for ULSI Interconnects,” Solid State Technology, Vol. 35, No. 4,
pp. 47-52, April 1992.

260(L)Tadahiro Ohmi, Mizuho Morita, Akinobu Teramoto, Koji Makihara, and K. S.
Tseng, “Very Thin Oxide Film on a Silicon Surface by Ultraclean Oxidation,”
Applied Physics Letters, Vol. 60, No. 17, pp. 2126-2128, April 1992.

261(C)Tadahiro Ohmi, “Impacts of Wafer Surface Cleaning Technology on Device
Performance and Reliability,” 1992 Proceedings, 38th Annual Technical
Meeting, Institute of Environmental Sciences,” Vol. 1, Nashville, pp. 287-296,
May 1992.

262(C)

Tatsuhiko Isagawa, Takashi Imaoka, Masahiko Kogure, Hisayuki Shimada, andTadahiro Ohmi, “Ozone Application to Wet Cleaning Processes for Ultra Clean
Surface Preparation,” 1992 Proceedings, 38th Annual Technical Meeting,Institute of Environmental Sciences,” Vol. 1, Nashville, pp. 438-444, May
1992.

263(C)

Takashi Imaoka, Takehiko Kezuka, Jun Takano, Isamu Sugiyama, andTadahiro Ohmi, “Metallic Impurities Segregation and Removal at the Interfaceof Silicon Wafer Surface and Liquid Chemicals,” 1992 Proceedings, 38th
Annual Technical Meeting, Institute of Environmental Sciences, Vol. 1,
Nashville, pp. 466-474, May 1992.

264(C)Tadahiro Ohmi, “Break Through for Scientific Semiconductor Manufacturing
in 2001,” Extended Abstracts, The International Symposium on Semiconductor
Manufacturing Technology, Tokyo, pp. 3-82, May 1992.

265(C)Tadahiro Ohmi, “A Proposal from Tohoku University,” Break Through for
Scientific Semiconductor Manufacturing in 2001, No. 71, pp. 1-70, May 1992.

266(C)

Satoshi Hasaka, Iwao Natori, Takeo Yamashita, and Tadahiro Ohmi, “Variationof Ion Energy and Ion Flux in Various Gas Plasmas with 13.56MHz Cathode
Coupled Parallel-Plate Plasma Equipment,” Extended Abstracts, 181th
Electrochemical Society Meeting, St.Louis, Abstract No. 66, pp. 107-108, May
1992.

267(C)

Hidetoshi Wakamatsu, Shintaro Aoyama, Jinzo Watanabe, Nobuhiro Konishi,
and Tadahiro Ohmi, “Formation of High Quality Tantalum Thin Films on SiO2
by Dual-Frequency-Excitation Plasma Process,” Extended Abstracts, 181th
Electrochemical Society Meeting, St. Louis, Abstract No. 130, pp. 217-218,
May 1992.

268-1(C)Mizuho Morita and Tadahiro Ohmi, “Pre-Gate Oxide Si Surface Control,”
Extended Abstracts, 181th Electrochemical Society Meeting, St.Louis, Abstract
No. 232, pp. 380-381, May 1992.

268-2(P)Mizuho Morita and Tadahiro Ohmi, “Pre-Gate Oxide Si Surface Control,” C.
Robert Helms and Bruce E. Deal, eds., The Physics and Chemistry of SiO2 andthe Si-SiO2 Interface 2, pp. 199-206, 1993.

269-1(C)Tadahiro Ohmi, Toshihito Tsuga, and Jun Takano, “Dependence of Surface
Microroughness on Types of Silicon Substrates,” Extended Abstracts, 181th
Electrochemical Society Meeting, St. Louis, Abstract No. 239, pp. 388-389,
May 1992.

269-2(P)

Tadahiro Ohmi, T. Tsuga, and J. Takano, “Dependence of Surface
Microroughness on Types of Silicon Substrates,” C. Robert Helms and Bruce E.
Deal, eds., The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, pp.
257-265, 1993.

270(C)

Hiroaki Uetake, Kohei Morizuka, and Tadahiro Ohmi, “Highly Reliable
Electro-Static Chucks Employing Plasma-Sprayed Aluminum-Oxide Coating
for Advanced Semiconductor Processing,” Extended Abstracts, 181th
Electrochemical Society Meeting, St. Louis, Abstract No. 284, pp. 457-458,
May 1992.

271(F)

Matagoro Maeno, Yoshinori Nakagawa, Nobuhiro Miki, and Tadahiro Ohmi,“Optimization of Fluorine Passivation of Stainless Steel Surfaces,” IEEE Trans.
on Semiconductor Manufacturing, Vol. 5, No. 2, pp. 107-113, May 1992.

272(F)

Mitsushi Itano, Frederick W. Kern, Jr., Reed W. Rosenberg, Masayuki
Miyashita, Ichiro Kawanabe, and Tadahiro Ohmi, “Particle Deposition andRemoval in Wet Cleaning Processes for ULSI Manufacturing,” IEEE Trans. on
Semiconductor Manufacturing, Vol. 5, No. 2, pp. 114-120, May 1992.

273(F)

Yasuyuki Yagi, Takashi Imaoka, Yasuhiko Kasama, and Tadahiro Ohmi,“Advanced Ultrapure Water Systems with Low Dissolved Oxygen for Native
Oxide Free Wafer Processing,” IEEE Trans. on Semiconductor Manufacturing,Vol. 5, No. 2, pp. 121-127, May 1992.

274(F)

Yoshio Nakamura, Hayao Ohzu, Mamoru Miyawaki, Akira Ishizaki, Tetsunobu
Kochi, and Tadahiro Ohmi, “Design of Bipolar Imaging Devices (BASIS):
Analysis of Random Noise,” IEEE Trans. on Electron Devices, Vol. 39, No. 6,
pp. 1341-1349, June 1992.

275(F)

Tadashi Shibata and Tadahiro Ohmi, “A Functional MOS Transistor FeaturingGate-Level Weighted Sum and Threshold Operations,” IEEE Trans. on
Electron Devices, Vol. 39, No. 6, pp. 1444-1455, June 1992.

276(C)Tadahiro Ohmi, Jun Takano, Toshihito Tsuga, Masahiko Kogure, Shintaro
Aoyama, Koichi Matsumoto, and Koji Makihara, “Wafer Quality Specification
for Future Sub-Half-Micron ULSI Devices,” 1992 Symposium on VLSITechnology, Seattle, pp. 24-25, June 1992.

277(C)

Tadashi Shibata and Tadahiro Ohmi, “A Self-Learning Neural-Network LSI
Using Neuron MOSFET's,” 1992 Symposium on VLSI Technology, Seattle, pp.
84-85, June 1992.

278(P)

Mitsushi Itano, Ichiro Kawanabe, Frederick W. Kern, Jr., Masayuki Miyashita,
Reed W. Rosenberg, and Tadahiro Ohmi, “Particle in ULSI Grade Chemicals
and Their Adhesion to Silicon Surfaces,” K. L. Mittal, ed., Particles on Surfaces
3, Detection, Adhesion, and Removal, pp. 35-49, Plenum Press, 1991.

279(C)Tadahiro Ohmi, “Recent Trend in Contamination Control in IC Processes,”
Proceedings of the Workshop on Semiconductor Wafer Cleaning and Surface
Characterization, Korea, pp. 5-52, June 1992.

280(F)

Hisayuki Shimada, Masanobu Onodera, Shigeki Shimomura, Koichi Hirose,and Tadahiro Ohmi, “Residual-Surfactant-Free Photoresist Development
Process,” Journal of the Electrochemical Society, Vol. 139, No. 6, pp.
1721-1730, June 1992.

281(F)

M. Maeno, R. Hirayama, H. Izumi, K. Chiba, Y. Mikasa, H. Matsushita, andTadahiro Ohmi, “Fluorine Passivation of Metal Alloy Surface with Volatile
Reaction Enhanced Mechanism,” Journal of the Electrochemical Society, Vol.
139, No. 7, pp. 1865-1869, July 1992.

282(F)Tadahiro Ohmi, Toshihito Tsuga, Jun Takano, Masahiko Kogure, Koji
Makihara, and Takashi Imaoka, “Influence of Vacancy in Silicon Wafer of
Various Types on Surface Microroughness in Wet Chemical Process,” IEICE
Trans. on Electronics, Vol. E75-C, No. 7, pp. 800-808, July 1992.

283(F)

Takashi Imaoka, Takehiko Kezuka, Jun Takano, Isamu Sugiyama, andTadahiro Ohmi, “The Segregation and Removal of Metallic Impurities at theInterface of Silicon Wafer Surface and Liquid Chemicals,” IEICE Trans. on
Electronics, Vol. E75-C, No. 7, pp. 816-828, July 1992.

284(F)

Takeo Yamashita, Satoshi Hasaka, Iwao Natori, and Tadahiro Ohmi,“Plasma-Parameter-Extraction for Minimizing Contamination and Damage in
RIE Processes,” IEICE Trans. on Electronics, Vol. E75-C, No. 7, pp. 839-843,
July 1992.

285(F)

Hisayuki Shimada, Shigeki Shimomura, Kouichi Hirose, Masanobu Onodera,
and Tadahiro Ohmi, “Optimization of Photolithography Developing Process
without Residual Surfactant on Surfaces,” IEICE Trans. on Electronics, Vol.
E75-C, No. 7, pp. 844-851, July 1992.

286(C)Tadahiro Ohmi, Takashi Imaoka, Jun Takano, and Fumitomo Kunimoto,“Improved Wet Chemical Cleaning for Realization of Ultra Clean Wafer
Surface,” Proceedings of the Abstracts, 23rd Annual Meeting of the Fine
Particle Society Vol. 2, Las Vegas, pp. 98-99, July 1992.

287(C)

Tadahiro Ohmi, Masakazu Nakamura, Atsushi Ohki, Koji Kawada, Keiji Hirao,
and Tsuyoshi Watanabe, “The Influence of SiH4 Thermal Decomposition
Characteristics by Various Effects,” Proceedings of the Abstracts, 23rd Annual
Meeting of the Fine Particle Society Vol. 2, Las Vegas, pp. 103-104, July 1992.

288(F)

Naozumi Terada, Takashi Haga, Noriyuki Miyata, Kazunori Moriki, Masami
Fujisawa, Mizuho Morita, Tadahiro Ohmi, and Takeo Hattori, "Opticalabsorption in ultrathin silicon oxide films near the SiO2/Si interface", PhysicalReview B vol. 46, No. 4, pp. 2312-2318 July 1992.

289(F)

Masayuki Miyashita, Tomohito Tsuga, Koji Makihara, and Tadahiro Ohmi,“Dependence of Surface Microroughness of CZ, FZ, and EPI Wafers on Wet
Chemical Processing,” Journal of the Electrochemical Society, Vol. 139, No. 8,
pp. 2133-2142, August 1992.

290(F)

H. Kikuyama, M. Waki, Ichiro Kawanabe, Masayuki Miyashita, T. Yabune, N.
Miki, Jun Takano, and Tadahiro Ohmi, “Etching Rate and Mechanism of
Doped Oxide in Buffered Hydrogen Fluoride Solution,” Journal of theElectrochemical Society, Vol. 139, No. 8, pp. 2239-2243, August 1992.

291(F)

Takeo Yamashita, Satoshi Hasaka, Iwao Natori, Hirofumi Fukui, and Tadahiro
Ohmi, “Minimizing Damage and Contamination in RIE Processes byExtracted-Plasma- Parameter Analysis,” IEEE Trans. on Semiconductor
Manufacturing, Vol. 5, No. 3, pp. 223-233, August 1992.

292(F)

Hitoshi Inaba, Soichiro Sakata, Takanori Yoshida, Takao Okada, and Tadahiro
Ohmi, “Antistatic Protection in Wafer Drying Process by Spin-Drying,” IEEE
Trans. on Semiconductor Manufacturing, Vol. 5, No. 3, pp. 234-240, August
1992.

293(C)

Koji Makihara, Akinobu Teramoto, K. Nakamura, Mizuho Morita, andTadahiro Ohmi, “Preoxide-Controlled Oxidation for Very Thin Gate Oxide,”
Extended Abstracts, 1992 International Conference on Solid State Devices andMaterials, Tsukuba, pp. 120-122, August 1992.

294(C)

Shintaro Aoyama, Yoshinori Nakagawa, and Tadahiro Ohmi, “Measurement of
Physical Thickness of Native Oxide Using Accurately-Calibrated Atomic ForceMicroscope,” Extended Abstracts, 1992 International Conference on Solid State
Devices and Materials, Tsukuba, pp. 126-128, August 1992.

295(C)

Tsuyoshi Watanabe, Masakazu Nakamura, Atushi Ohki, Koji Kawada, Shinji
Miyoshi, Shinji Takahashi, Michael S. K. Chen, and Tadahiro Ohmi, “Silane
Thermal Decomposition Characteristics on Various Si Surface,” Extended
Abstracts, 1992 International Conference on Solid State Devices and Materials,
Tsukuba, pp. 132-134, August 1992.

296(C)

Tatsuhiko Isagawa, Masahiko Kogure, Takashi Imaoka, and Tadahiro Ohmi,“Ultra Clean Surface Preparation Using Ozonized Ultrapure Water,” Extended
Abstracts, 1992 International Conference on Solid State Devices and Materials,
Tsukuba, pp. 193-195, August 1992.

297(C)

Takashi Matsuura, Junichi Murota, Tadahiro Ohmi, and Shoichi Ono, “SideEtch Control of n+-Polysilicon with Nitrogen Added Chlorine Plasma,”
Extended Abstracts, 1992 International Conference on Solid State Devices andMaterials, Tsukuba, pp. 418-419, August 1992.

298(C)

Koji Kotani, Tadahiro Ohmi, Satoshi Shimonishi, T. Migita, H. Komori,Tadashi Shibata, and Takahisa Nitta, “Low-Temperature Furnace-Annealed
Aluminum-Gate MOSFET for Ultra-High-Speed Integrated Circuits,” Extended
Abstracts, 1992 International Conference on Solid State Devices and Materials,
Tsukuba, pp. 431-433, August 1992.

299(C)

Hisayuki Shimada, Shigeki Shimomura, Koichi Hirose, Masanobu Onodera,
and Tadahiro Ohmi, “High-Sensitivity and High-Resolution Contact Hole
Patterning Enhanced by an Optimized Developer,” Extended Abstracts, 1992
International Conference on Solid State Devices and Materials, Tsukuba, pp.
440-442, August 1992.

300(C)Tadahiro Ohmi, “Closed Manufacturing System for Advanced Semiconductor
Technology - Native Oxide Free Processing,” The “Official” International
Symposium, The Future Practice of Contamination Control, London, pp.
165-171, September 1992.

301(C)

M. Toda, M. Shishido, Y. Kanno, M. Umeda, Takahisa Nitta, and Tadahiro
Ohmi, “Wafer Transportation through a Tunnel Filled with Nitrogen Gas,” The“Official” International Symposium, The Future Practice of Contamination
Control, London, pp. 173-183, September 1992.

302(C)

Hitoshi Inaba, T. Yoshida, Takao Okada, Tadahiro Ohmi, Mizuho Morita, andMasakazu Nakamura, “Neutralization of Wafer Charging in Nitrogen Gas,” The“Official” International Symposium, The Future Practice of Contamination
Control, London, pp. 199-204, September 1992.

303(C)Tadahiro Ohmi, M. S. K. Chen, Koji Kawada, Shinji Miyoshi, Masakazu
Nakamura, Atsushi Ohki, Shinji Takahashi, and Tsuyoshi Watanabe, “Physics
and Chemistry of Specialty Gases for ULSI Microfabrication,” The “Official”
International Symposium, The Future Practice of Contamination Control,
London, pp. 413-420, September 1992.

304(F)Tadahiro Ohmi, Masakazu Nakamura, Atsushi Ohki, Kouji Kawada, and Keiji
Hirao, “Trace Moisture Analysis in Specialty Gases,” Journal of theElectrochemical Society, Vol. 139, No. 9, pp. 2654-2658, September 1992.

305(C)

T. Takawaki, T. Hoshi, Tadashi Shibata, Tadahiro Ohmi, and T. Nitta,“Giant-Grain-Copper Metallization for High Reliability and High Speed ULSIInterconnects,” Proceedings, SPIE 1992, Submicrometer Metallization:The
Challenges, Opportunities, and Limitations, San Jose, pp. 3-10, September
1992.

306-1(C)K. Kimura, Y. Ogata, F. Tanaka, T. Imaoka, J. Takano, T. Isagawa, T. Kezuka,
T. Futatsuki, and Tadahiro Ohmi, “Study on an Influence of TOC in Hydrogen
Peroxide for Advanced Wet Chemical Processing,” Extended Abstracts, 182nd
Electrochemical Society Meeting, Toronto, Abstract No. 405, pp. 596-597,
October 1992.

306-2(P)K. Kimura, Y. Ogata, F. Tanaka, Takashi Imaoka, Jun Takano, Tatsuhiko
Isagawa, T. Kezuka, Masahiko Kogure, T. Futatsuki, and Tadahiro Ohmi,“Study on an Influence of TOC in Hydrogen Peroxide for Advanced Wet
Chemical Processing,” Dennis N.Schmidt, ed., Contamination Control andDefect Reduction in Semiconductor Manufacturing I, PV92-21, pp. 347-360,
The Electrochemical Society, Pennington, NJ, 1992.

307-1(C)Katsuhide Ohtani, Kiyohiko Ihara, and Tadahiro Ohmi, “Study on Adhesion
and Removal of Metallic Impurities on PFA Surface,” Extended Abstracts,
182nd Electrochemical Society Meeting, Toronto, Abstract No. 406, pp.
598-599, October 1992.

307-2(P)

Katsuhide Ohtani, Kiyohiko Ihara, and Tadahiro Ohmi, “Study on Adhesion
and Removal of Metallic Impurities on PFA Surface,” Dennis N. Schmidt, ed.,Contamination Control and Defect Reduction in Semiconductor Manufacturing
I, PV92-21, pp. 361-374, The Electrochemical Society, Pennington, NJ, 1992.

308(C)

Fumitomo Kunimoto, Frederick W. Kern, Jr., and Tadahiro Ohmi,“Characterization of Wafer Spin Cleaning Process with Advanced Chemical
Distribution System,” Extended Abstracts, 182nd Electrochemical Society
Meeting, Toronto, Abstract No. 407, pp. 600-601, October 1992.

309-1(C)Nobuhiro Miki, Matagoro Maeno, T. Fukudome, Masayuki Miyashita, andTadahiro Ohmi, “Synthesis of Pure Fluorite from Spent Fluoride Chemicals I.
The Reaction Mechanism of Binary System HF-H2O and Calcite in a Column
Reactor,” Extended Abstracts, 182nd Electrochemical Society Meeting,
Toronto, Abstract No. 408, pp. 602-603, October 1992.

309-2(P)Nobuhiro Miki, Matagoro Maeno, T. Fukudome, Masayuki Miyashita, andTadahiro Ohmi, “Synthesis of Pure Fluorite from Spent Fluoride Chemicals I.
The Reaction Mechanism of Binary System HF-H2O and Calcite in a Column
Reactor,” Dennis N. Schmidt, ed., Contamination Control and Defect Reduction
in Semiconductor Manufacturing I, PV92-21, pp. 375-385, The Electrochemical
Society, Pennington, NJ, 1992.

310-1(C)Matagoro Maeno, Nobuhiro Miki, T. Fukudome, Masayuki Miyashita, andTadahiro Ohmi, “Synthesis of Pure Fluorite from Spent Fluoride Chemicals II.
The Enhanced Reaction of Triple System NH4F-HF-H2O and Calcite in a
Evacuating Reactor,” Extended Abstracts, 182nd Electrochemical Society
Meeting, Toronto, Abstract No. 409, pp. 604-605, October 1992.

310-2(P)Matagoro Maeno, Nobuhiro Miki, T. Fukudome, Masayuki Miyashita, andTadahiro Ohmi, “Synthesis of Pure Fluorite from Spent Fluoride Chemicals II.
The Enhanced Reaction of Ternary System NH4F-HF-H2O and Calcite in an
Evacuating Reactor,” Dennis N. Schmidt, ed., Contamination Control andDefect Reduction in Semiconductor Manufacturing I, PV92-21, pp. 386-396,
The Electrochemical Society, Pennington NJ, 1992.

311-1(C)Atsushi Ohki, Y. Nakagawa, Masakazu Nakamura, Koji Kawada, Shinji
Miyoshi, Tsuyoshi Watanabe, Shinji Takahashi, M. S. K. Chen, and Tadahiro
Ohmi, “The Formation Technology of Chrome Oxide Passivated Surface Film,”
Extended Abstracts, 182nd Electrochemical Society Meeting, Toronto,
Abstracts No. 412, pp. 608-609, October 1992.

311-2(P)Atsushi Ohki, Y. Nakagawa, Masakazu Nakamura, Koji Kawada, Shinji
Miyoshi, Tsuyoshi Watanabe, Shinji Takahashi, M. S. K. Chen, and Tadahiro
Ohmi, “The Formation Technology of Chrome Oxide Passivated Surface Film,”
Dennis N. Schmidt, ed., Contamination Control and Defect Reduction in
Semiconductor Manufacturing I, PV92-21, pp. 416-437, The Electrochemical
Society, Pennington, NJ, 1992.

312-1(C)Shinji Miyoshi, Masakazu Nakamura, Atsushi Ohki, Koji Kawada, Tsuyoshi
Watanabe, Shinji Takahashi, Michael S. K. Chen, and Tadahiro Ohmi, “Ultra
Clean Welding Technology with out Accompanying Corrosion,” Extended
Abstracts, 182nd Electrochemical Society Meeting, Toronto, Abstracts No. 413,
pp. 610-611, October 1992.

312-2(P)Shinji Miyoshi, Masakazu Nakamura, Atsushi Ohki, Koji Kawada, Tsuyoshi
Watanabe, Shinji Takahashi, Michael S. K. Chen, and Tadahiro Ohmi, “Ultra
Clean Welding Technology without Accompanying Corrosion,” Dennis N.
Schmidt, ed., Contamination Control and Defect Reduction in Semiconductor
Manufacturing I, PV92-21, pp. 438-454, The Electrochemical Society,
Pennington, NJ, 1992.

313-1(C)Shinji Takahashi, Tsuyoshi Watanabe, Shinji Miyoshi, Atsushi Ohki, Koji
Kawada, Masakazu Nakamura, Michael S. K. Chen, and Tadahiro Ohmi,“Thermal Decomposition Characteristics of SiH4,” Extended Abstracts, 182nd
Electrochemical Society Meeting, Toronto, Abstract No. 414, pp. 612-613,
October 1992.

313-2(P)Shinji Takahashi, Tsuyoshi Watanabe, Shinji Miyoshi, Atsushi Ohki, Koji
Kawada, Masakazu Nakamura, Michael S. K. Chen, and Tadahiro Ohmi,“Thermal Decomposition Characteristics of SiH4,” Dennis N. Schmidt, ed.,Contamination Control and Defect Reduction in Semiconductor Manufacturing
I, PN92-21, pp. 455-477, The Electrochemical Society, Pennington, NJ, 1992.

314-1(C)Michael S. K. Chen, Koji Kawada, Shinji Miyoshi, Masakazu Nakamura,
Atsushi Ohki, Shinji Takahashi, Tsuyoshi Watanabe, and Tadahiro Ohmi,“Thermal Decomposition of Disilane and Trisilane in a Tube Reactor,”
Extended Abstracts, 182nd Electrochemical Society Meeting, Toronto, Abstract
No. 415, pp. 614-615, October 1992.

314-2(P)Michael S. K. Chen, Koji Kawada, Shinji Miyoshi, Masakazu Nakamura,
Atsushi Ohki, Shinji Takahashi, Tsuyoshi Watanabe, and Tadahiro Ohmi,“Thermal Decomposition of Disilane and Trisilane in a Tube Reactor,” Dennis
N. Schmidt, ed., Contamination Control and Defect Reduction in
Semiconductor Manufacturing I, PV92-21, pp. 478-496, The Electrochemical
Society, Pennington, NJ, 1992.

315(P)

Tadashi Shibata and Tadahiro Ohmi, “An Intelligent Transistor NEURONMOSFET: Its Impact on ULSI Logic-Circuits Implementation,” R. Ellwanger,
C. C. Tsal, W. Yangyuan, and M. Bangxian, eds., The Proceedings of the Third
International Conference on Solid State and Integrated Circuit Technology, pp.
242-245, (Publishing House of Electronics Industry, 1992.)

316(C)

Yoshio Ishihara, T. Ikeda, T. Takasaki, H. Hasegawa, R. Fukushima, Nobuhiro
Miki, and Tadahiro Ohmi, “Development of Leak-Tight Electric Conductivity
Measurement System and its Application to Liquid Specialty Gases,”
Microcontamination 92 Proceedings, Santa Clara, pp. 75-85, October 1992.

317(C)

Masakazu Nakamura, Atsushi Ohki, Kouji kawada, Keiji Hirao, and Tadahiro
Ohmi, “Trace Moisture Analysis in Specialty Gases,” Microcontamination 92
Proceedings, Santa Clara, pp. 86-97, October 1992.

318(C)

Koichi Ishikawa, Hiroshi Mihira, and Tadahiro Ohmi, “High-Sensitivity Gas
Chromatograph for the Analysis of Impurities in Specialty Gases,”
Microcontamination 92 Proceedings, Santa Clara, pp. 98-106, October 1992.

319(C)

Tadahiro Ohmi, Koji Kawada, Atsushi Ohki, and Tsuyoshi Watanabe,“Thermal Decomposition of SiCl4 and SiF4 on Various Si Surfaces,”
Microcontamination 92 Proceedings, Santa Clara, pp. 107-118, October 1992.

320(C)

Atsushi Ohki, Masakazu Nakamura, Koji Kawada, Tsuyoshi Watanabe,Michael S. K. Chen, and Tadahiro Ohmi, “Thermal Decomposition of C2F6 andC3F8,” Microcontamination 92 Proceedings, Santa Clara, pp. 131-142, October
1992.

321(F)

Haruhiro H. Goto, Hans-Dirk Lowe, and Tadahiro Ohmi, “Dual Excitation
Reactive Ion Etcher for Low Energy Plasma Processing,” Journal of Vacuum
Science & Technology A, Vol. 10, No. 5, pp. 3048-3054, September/October
1992.

322(F)Tadahiro Ohmi, Takashi Imaoka, Isamu Sugiyama, and T. Kezuka, “Metallic
Impurities Segregation at the Interface between Si Wafer and Liquid during
Wet Cleaning,” Journal of Electrochemical Society, Vol. 139, No. 11, pp.
3317-3335, November 1992.

323(F)Tadahiro Ohmi, Tatsuhiko Isagawa, Takashi Imaoka, and Isamu Sugiyama,“Ozone Decomposition in Ultrapure Water and Continuous Ozone Sterilization
for a Semiconductor Ultrapure Water System,” Journal of Electrochemical
Society, Vol.139, No. 11, pp. 3336-3345, November 1992.

324(F)

Hitoshi Inaba, Tadahiro Ohmi, Mizuho Morita, Masakazu Nakamura, Takanori
Yoshida, and Takao Okada, “Neutralization of Wafer Charging in NitrogenGas,” IEEE Trans. on Semiconductor Manufacturing, Vol. 5, No. 4, pp.
359-367, November 1992.

325(F)

Haruhiro H. Goto, Tadahiro Ohmi, Hans-Dirk Lowe, Kai-Ye Fung, andStephen G. Newberry, “A Proposed Magnetically Enhanced Reactive Ion
Etcher for ULSI,” IEEE Trans. on Semiconductor Manufacturing, Vol. 5, No. 4,
pp. 337-346, November 1992.

326(C)Tadahiro Ohmi and Mizuho Morita, “Reliability of Ultra Thin Oxide Films,”
Technical Proceedings, SEMICON/KOREA 92, Seoul, pp. 225-232, November
1992.

327(L)Tadahiro Ohmi and Shintaro Aoyama, “Calibration of Height in Atomic ForceMicroscope Images with Subnanometer Scale Silicon Dioxide Steps,” Applied
Physics Letters, Vol. 61, No. 20, pp. 2479-2481, November 1992.

328(W)Tadahiro Ohmi, Koji Kawada Atsushi Ohki, Tsuyoshi Watabnabe, Micheal S.K.
Chen, Shinji Takahashi, Shinji Miyoshi, “Thermal Decomposition of SiH4,
SiCl4, and SiF4 on Various Si Surfaces”, the 2nd Microelectronics Conference
Proceeding, pp.183-210, November 1992.

329(W)

Mizuho Morita, and Tadahiro Ohmi, “Pre-Gate Oxide Si Surface Control”, the
2nd Microelectronics Conference Proceeding, pp.255-262, November 1992.

330(W)

Takeo Yamashita, Tadashi Shibata, and Tadahiro Ohmi, “Neuron MOS
Winner-Take-All Circuit and its Application to Associative Memory(GENERAL)”, the 2nd Microelectronics Conference Proceeding, pp.264-274,
November 1992.

331(C)

Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi, “Neuron-MOS Binary-Logic
Circuits Featuring Dramatic Reduction in Transistor Count andInterconnections,” Technical Digest, International Electron Devices Meeting
1992, San Francisco, pp. 431-434, December 1992.

332(C)

H. Ishii, Tadashi Shibata, H. Kosaka, and Tadahiro Ohmi,“Hardware-Backpropagation Learning of Neuron-MOS Neural Network,”
Technical Digest, International Electron Devices Meeting 1992, San Francisco,
pp. 435-438, December 1992.

333(M)Tadahiro Ohmi and Tadashi Shibata, “Scientific ULSI Manufacturing in the
21st Century,” The Electrochemical Society Interface, Vol. 1, No. 1, pp. 32-37,
Winter 1992.

334(L)

Takashi Matsuura, Tadahiro Ohmi, Junichi Murota, and Shoichi Ono,
“Inversion from Selective Homoepitaxy of Si Film Deposition on SiO2 Using
an Ultraclean Electron Cyclotron Resonance Plasma,” Applied Physics Letters,Vol. 61, No. 24, pp. 2908-2910, December 1992.

335(P)

Mizuho Morita and Tadahiro Ohmi, “In Situ Control of Native Oxide Growthfor Semiconductor Processes,” R. J. Nemanich, C. R. Helms, M. Hirose and G.
W. Rubloff, eds., Materials Research Society Symposium Proceedings, Vol.
259, pp. 19-29, 1992.

336(P)Tadahiro Ohmi, “Technology for High-Power Devices,” Andre A. Jaecklin, ed.,Power Semiconductor Devices and Circuits, pp. 1-30, Plenum Press, New York,
1992.

337(F)

J. Echigoya, H. Enoki, T. Satoh, T. Waki, Tadahiro Ohmi, Masahito Otsuki,
and Tadashi Shibata, “Thin Film Reaction and Interface Structure of Cu on Si,”
Applied Surface Science, Vol.56-58, pp. 463-468, (Elsevier Science Publishers
B. V., 1992.)