Paper List
January－December, 2016
E2016-1(C)[Invited Paper] Wide dynamic range LOFIC CMOS image sensors: principle,achievements, and extendibility
International Forum on Detectors for Photon Science (IFDEPS), p.9, February
2016.
Rihito Kuroda and Shigetoshi Sugawa

E2016-2(F)Impact on doping concentration on 1/f noise performances ofaccumulation-mode Si(100) n-MOSFETs
Japanese Journal of Applied Physics, Vol.55, 04ED08, March 2016.
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa
https://doi.org/10.7567/JJAP.55.04ED08

E2016-3(F)Proposal of tunneling- and diffusion-current hybrid MOSFET: A device
simulation study
Japanese Journal of Applied Physics, Vol.55, 04ED12, March 2016.
Kiichi Furukawa, Akinobu Tearamoto, Rihito Kuroda, Tomoyuki Suwa,
Keiichi Hashimoto, Takashi Kojiri, and Shigetoshi Sugawa
https://doi.org/10.7567/JJAP.55.04ED12

E2016-4(F)Analysis and reduction of leakage current of 2 kV monolithic isolator with wide
trench spiral isolation structure
Japanese Journal of Applied Physics, Vol.55, No.4S, 04EF07, 2016.
Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
https://doi.org/10.7567/JJAP.55.04EF07

E2016-5(C)[Invited Paper] Random telegraph noise measurement and analysis based onarrayed test circuit toward high S/N CMOS image sensors
2016 International Conference on Microelectronic Test Structures (ICMTS),
3-1, pp.46-51, Yokohama, March 2016.
Rihito Kuroda, Akinobu Teramoto, and Shigetoshi Sugawa
https://doi.org/10.1109/ICMTS.2016.7476172

E2016-6(F)Low Interface Trap Density and High Breakdown Electric Field SiN Films on
GaN Formed by Plasma Pretreatment Using Microwave-Excited
Plasma-Enhanced Chemical Vapor Deposition
IEEE Transactions on Electron Devices, Vol.63, Issue4, pp.1795-1801, April
2016.
Tadashi Watanabe, Akinobu Teramoto, Yukihisa Nakao, Shigetoshi Sugawa,and Tadahiro Ohmi
https://doi.org/10.1109/TED.2016.2525766

E2016-7(F)Detection of short range order in SiO2 thin-films by grazing-incidence wideand small-angle X-ray scattering
Journal of Applied Physics, Vol.119, 154103(2016), April 2016.
Kohki Nagata, Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu
Teramoto and Tadahiro Ohmi
https://doi.org/10.1063/1.4947053

E2016-8(F)Analysis and Reduction Technologies of Floating Diffusion Capacitance inCMOS Image Sensor for Photon-Countable Sensitivity
ITE Transactions on Media Technology and Applications, Vol.4, No.2,pp.91-98, April 2016.
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda,
Shigetoshi Sugawa
https://doi.org/10.3169/mta.4.91

E2016-9(F)Floating Capacitor Load Readout Operation for Small, Low Power
Consumption and High S/N Ratio CMOS Image Sensors
ITE Transactions on Media Technology and Applications, Vol.4, No.2,
pp.99-108, April 2016.
Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
https://doi.org/10.3169/mta.4.99

E2016-10(F)A High Quantum Efficiency High Readout Speed 1024 Pixel
Ultraviolet-Visible-Near Infrared Waveband Photodiode Array
ITE Transactions on Media Technology and Applications, Vol.4, No.2,
pp.109-115, April 2016.
Rihito Kuroda, Takahiro Akutsu, Yasumasa Koda, Kenji Takubo, HidekiTominaga, Ryuta Hirose, Tomohiro Karasawa, Shigetoshi Sugawa
https://doi.org/10.3169/mta.4.109

E2016-11(F)A CMOS Image Sensor with 240 μV/e- Conversion Gain, 200 ke- Full Well
Capacity, 190-1000 nm Spectral Response and High Robustness to UV light
ITE Transactions on Media Technology and Applications, Vol.4, No.2, pp.
116-122, April 2016.
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda,Shigetoshi Sugawa
https://doi.org/10.3169/mta.4.116

E2016-12(F)A 20Mfps Global Shutter CMOS Image Sensor with Improved Light Sensitivity
and Power Consumption Performances
ITE Transactions on Media Technology and Applications, Vol.4, No.2, pp.
pp.149-154, April 2016.
Rihito Kuroda, Yasuhisa Tochigi, Ken Miyauchi, Tohru Takeda, Hidetake Sugo,
Fan Shao, Shigetoshi Sugawa
https://doi.org/10.3169/mta.4.149

E2016-13(C)[Invited Paper] Advanced CMOS Image Sensors Development for HighSensitivity, High Speed and Wide Spectral Response
International Workshop on Radiation Resistant Sensors and Related
Technologies for Nuclear Power Plant Decommissioning (Collaborative
Laboratories for Advanced Decommissioning Science, JAPAN ATOMICENERGY AGENCY), p.44, April 2016.
Rihito Kuroda and Shigetoshi Sugawa

E2016-14(C)Introduction of a High Selectivity Etching Process with Advanced SiNx Etch
Gas in the Fabrication of FinFET Structures
229th Meeting of The Electrochemical Society, Abs.1166, San Diego, May
2016.
https://doi.org/10.1149/MA2016-01/23/1166

E2016-15(P)Introduction of a High Selectivity Etching Process with Advanced SiNx Etch
Gas in the Fabrication of FinFET StructuresECS Transactions, Vol.72, Issue 4, Silicon Compatible Materials, Processes,and Technologies for Advanced Integrated Circuits and Emerging Applications
6, pp.23-30, May 2016.
T. Kojiri, T. Suwa, K. Hashimoto, A. Teramoto, R. Kuroda, and S. Sugawa
https://doi.org/10.1149/07204.0023ecst

E2016-16(C)Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed ByAtomic Layer Deposition at Optimized Process Temperature and O2 Post
Deposition Annealing
229th Meeting of The Electrochemical Society, Abs.1174, San Diego, May
2016.
Yasumasa Koda, Hisaya Sugita, Tomoyuki Suwa, Rihito Kuroda, Tetsuya
Goto, Akinobu Teramoto and Shigetoshi Sugawa
https://iopscience.iop.org/article/10.1149/MA2016-01/23/1174

E2016-17(P)Low Leakage Current Al2O3 Metal-Insulator-Metal Capacitors Formed By
Atomic Layer Deposition at Optimized Process Temperature and O2 Post
Deposition Annealing
ECS Transactions, Vol.72, Issue 4, Silicon Compatible Materials, Processes,and Technologies for Advanced Integrated Circuits and Emerging Applications
6, pp.91-100, May 2016.
Yasumasa Koda, Hisaya Sugita, Tomoyuki Suwa, Rihito Kuroda, Tetsuya
Goto, Akinobu Teramoto and Shigetoshi Sugawa
http://doi.org/10.1149/07204.0091ecst

E2016-18(F)High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
IEICE TRANSACTIONS on Electronics, Special Section on Fundamentals andApplications of Advanced Semiconductor Devices2015, Vol.E99-C, No.5,
pp.535-540, May 2016.
Yasutaka MAEDA, Shun-ichiro OHMI, Tetsuya GOTO, Tadahiro OHMIhttps://doi.org/10.1587/transele.E99.C.535

E2016-19(C)A Dead-time Free Global Shutter CMOS Image Sensor with in-pixel LOFIC
and ADC using Pixel-wise Connections
Symposium on VLSI Circuits, pp.224-225, Honolulu, June 2016.
Hidetake Sugo, Shunichi Wakashima, Rihito Kuroda, Yuichiro Yamashita,
Hirofumi Sumi, Tzu-Jui Wang, Po-Sheng Chou, Ming -Chieh Hsu andShigetoshi
https://doi.org/10.1109/VLSIC.2016.7573544

E2016-20(C)Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics ofPentacene-Based OFET
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced
Semiconductor Devices, A2-3, pp.98-101, Hakodate, July 2016.
Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi

E2016-21(F)Evaluating Work-Function and Composition of ErSix on Various Surface
Orientation of Silicon
ECS Journal of Solid State Science and Technology, Vol.5, Issue10, pp.
608-613, September 2016.
Akinobu Teramoto, Hiroaki Tanaka, Tomoyuki Suwa, Tetsuya Goto, Rihito
Kuroda, Tsukasa Motoya, Kazumasa Kawase, and Shigetoshi Sugawa
https://doi.org/10.1149/2.0221610jss

E2016-22(F)Effects of Oxygen Microbubbles on Photoresist Layers under Hot WaterConditions
Journal of Photopolymer Science and Technology, Vol. 29, No. 4, pp.643-646,
September 2016
Masayoshi Takahashi, Yasuyuki Shirai, Akinobu Teramoto, Tunejirou
Takahashi, Katsumi Tatera, Kouhei Matsuura, Hideo Horibe
https://doi.org/10.2494/photopolymer.29.643

E2016-23(C)Formation Technology of Flat Surface after Selective-Epitaxial-Growth on
Ion-implanted (100) Oriented Thin SOI Wafers
Extended Abstracts of the 2016 International Conference on Solid State
Devices and Materials, PS-1-03, pp.649-650, Tsukuba, September 2016.
K. Furukawa, A. Teramoto, R. Kuroda, T. Suwa, K. Hashimoto, S. Sugawa, D.
Suzuki, Y. Chiba, K. Ishii, A. Shimizu, and K. Hasebe

E2016-24(C)Low Frequency Noise of Accumulation-Mode n-and p-MOSFETs fabricated on(110) Crystallographic Silicon-Oriented Wafers
Extended Abstracts of the 2016 International Conference on Solid State
Devices and Materials, PS-3-11, pp.717-718, Tsukuba, September 2016.
Philippe Gaubert, Akinobu Teramoto and Shigetoshi Sugawa

E2016-25(C)Oxidizing Species Dependence of the Interface Reaction during
Atomic-Layer-Deposition Process and Post-Deposition-Anneal
PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATESCIENCE (PRiME2016) /230th ECS Meeting, Meeting Abstracts, Abs.1836,
G02-1836, Honolulu, Hawaii, October 2016.

Tomoyuki Suwa, Akinobu Teramoto, Yasumasa Koda, Masaya Saito, Hisaya
Sugita, Marie Hayashi, Junichi Tsuchimoto, Hidekazu Ishii, Yoshinobu Shiba,
Yasuyuki Shirai and Shigetoshi Sugawa
https://doi.org/10.1149/MA2016-02/27/1836
E2016-26(P)Oxidizing Species Dependence of the Interface Reaction during
Atomic-Layer-Deposition Process and Post-Deposition-Anneal
ECS Transactions, Vol.75, Issue 5, Semiconductors, Dielectrics, and Metals for
Nanoelectronics 14, pp.207-214, October 2016.
T. Suwa, A. Teramoto, Y. Koda, M. Saito, H. Sugita, M. Hayashi, J.
Tsuchimoto, H. Ishii, Y. Shiba, Y. Shirai and S. Sugawa
https://doi.org/10.1149/07505.0207ecst

E2016-27(C)A High Sensitivity Compact Gas Concentration Sensor using UV Light andCharge Amplifier Circuit
IEEE Sensors 2016, pp.877-879, Orlando, October 2016.
Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda,Yoshinobu Shiba, Yasuyuki
Shirai, Rihito Kuroda and Shigetoshi Sugawa
https://doi.org/10.1109/ICSENS.2016.7808698

E2016-28(C)190-1100 nm Waveband Multispectral Imaging System using High Light
Resistance Wide Dynamic Range CMOS Image Sensor
IEEE Sensors 2016, pp.283-285, Orlando, October 2016.
Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi,
Rihito Kuroda and Shigetoshi Sugawa
https://doi.org/10.1109/ICSENS.2016.7808492

E2016-29(C)[Invited Paper] High Quality Film and Interface Formation using Appropriate
Reaction Species
AVS 63rd International Symposium& Exhibition, Plasma Science andTechnology, Session PS+TF-WeA, Nashville, November 2016.
Akinobu Teramoto

E2016-30(C)[Invited Paper] A High Sensitivity 20Mfps CMOS Image Sensor with Readout
speed of 1Tpixel/sec for Visualization of Ultra-high Speed Phenomena
The 31st International Congress on High-speed Imaging and Photonics,
Abstract p.163/ Proceeding pp.68-73, November 2016.
Rihito Kuroda and Shigetoshi Sugawa

E2016-31(C)[Invited Paper] A Dead-time free global shutter stacked CMOS image sensor
with in-pixel LOFIC and ADC using pixel-wise connections
3rd International Workshop on Image Sensors and Imaging Systems(IWISS2016) (Group of Information Photonics (IPG) +CMOS Working Group,
the Optical Society of Japan & Technical Group on Information Sensing
Technologies (IST), the Institute of Image Information and Television
Engineers (ITE)), Vol.40, NO.40, pp.13-14, November 2016.
Rihito Kuroda, Hidetake Sugo, Shunichi Wakashima, Shigetoshi Sugawa

E2016-32(C)

190-1100 nm waveband multispectral imaging system using high UV-lightresistance 94dB dynamic range CMOS image sensor
3rd International Workshop on Image Sensors and Imaging Systems(IWISS2016) (Group of Information Photonics (IPG) +CMOS Working Group,
the Optical Society of Japan & Technical Group on Information Sensing
Technologies (IST), the Institute of Image Information and Television
Engineers (ITE)), Vol.40, No.40, pp.37-38, 2016.
Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi,
Rihito Kuroda, Shigetoshi Sugawa

E2016-33(F)Mirror-field confined compact plasma source using permanent magnet forplasma processings
Review of Scientific Instruments, Vol.87, Issue12, 123508, December 2016.
Tetsuya Goto, Kei-ichiro Sato, Yuki Yabuta, and Shigetoshi Sugawa
https://doi.org/10.1063/1.4972294

E2016-34(C)Electrical Characteristics of Si-Doped IGZO TFTs Fabricated Using Ion
Implantation
The 23rd International Display Workshops (IDW’16), AMD1-2, pp.252-255,
Fukuoka, December 2016.
Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa

E2016-35(C)An Over 1Mfps Global Shutter CMOS Image Sensor with 480 Frame Storage
Using Vertical Analog Memory Integration
IEEE International Electron Devices Meeting, pp.212-215, San Francisco,December 2016.
Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Yuki Kumagai, Akira Chiba,
Noriyuki Miura, Naoya Kuriyama, Shigetoshi Sugawa
https://doi.org/10.1109/IEDM.2016.7838376