Paper List
January－December, 2015
E2015-1(F)Atomically Flattening of Si Surface of Silicon on Insulator andIsolation-Patterned Wafers
Japanese Journal of Applied Physics, Vol.54, 04DA04, February 2015.
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu
Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa,Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiro
Shibusawa
https://doi.org/10.7567/JJAP.54.04DA04

E2015-2(F)Analysis of breakdown voltage of area surrounded by multiple trench
gaps in 4 kV monolithic isolator for communication network interface
Japanese Journal of Applied Physics, Vol.54, No.4S, 04DB01-1-04DB01-6,
February 2015.
Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa
https://doi.org/10.7567/JJAP.54.04DB01

E2015-3(C)Analysis of Pixel Gain and Linearity of CMOS Image Sensor using
Floating Capacitor Load Readout Operation
SPIE-IS&T Electronic Imaging, 9403, pp.94030E-1-94030E-10, San
Francisco February, 2015.
Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi
Suagawa
https://doi.org/10.1117/12.2083111

E2015-4(C)[Invited Paper] UV/VIS/NIR imaging technologies: challenges andopportunities
SPIE Sensing Technology and Applications, 9481, pp.948108-1-948108-8,
Baltimore, May, 2015.
Rihito Kuroda, Shigetoshi Sugawa
https://doi.org/10.1117/12.2180060

E2015-5(C)Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen
Radical Treatment
227th Meeting of The Electrochemical Society, Abs.1351, Chicago, May
2015.
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi
Sugawa and Tadahiro Ohmi

E2015-6(P)Crystallinity Improvement of Ferroelectric BiFeO3 Thin Film by Oxygen
Radical Treatment
ECSTransactions,Vol.66,

Issue5,Advanced

CMOS-Compatible

Semiconductor Devices 17, pp.261-267, May 2015.
F. Imaizumi, T. Goto, A. Teramoto, S. Sugawa, and T. Ohmi
https://doi.org/10.1149/06605.0261ecst
E2015-7(C)Ultra-Low Temperature Flattening Technique of Silicon Surface Using
Xe/H2 Plasma
227th Meeting of The Electrochemical Society, Abs.1353, Chicago, May2015
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama,
Shigetoshi Sugawa and Tadahiro Ohmi

E2015-8(P)Ultra-Low Temperature Flattening Technique of Silicon Surface Using
Xe/H2 Plasma
ECSTransactions,Vol.66,Issue5,Advanced

CMOS-Compatible

Semiconductor Devices17, pp.277-283, May 2015.
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama,
Shigetoshi Sugawa, and Tadahiro Ohmi
https://doi.org/10.1149/06605.0277ecst
E2015-9(C)Low Temperature Atomically Flattening of Si Surface of Shallow TrenchIsolation Pattern 227th Meeting of The Electrochemical Society, Abs.1354,
Chicago, May 2015
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Naoya
Akagawa, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, YutakaKamata, Yuki Kumagai and Katsuhiko Shibusawa

E2015-10(P) Low Temperature Atomically Flattening of Si Surface of Shallow TrenchIsolation PatternECS

Transactions,Vol.66,

Issue5,

Advanced

CMOS-Compatible

Semiconductor Devices17, pp.285-292, May 2015.
T. Goto, R. Kuroda, T. Suwa, A. Teramoto, N. Akagawa, D. Kimoto, S.
Sugawa, T. Ohmi, Y. Kamata, Y. Kumagai, and K. Shibusawa
https://doi.org/10.1149/06605.0285ecst
E2015-11(C) Effect of Hydrogen on Silicon Nitrides Formation by Microwave ExcitedPlasma Enhanced Chemical Vapor Deposition
227th Meeting of The Electrochemical Society, Abs.1378, Chicago, May2015.
Akinobu Teramoto, Yukihisa Nakao, Tomoyuki Suwa, Keiichi Hashimoto,Tsukasa Motoya, Masaki Hirayama, Shigetoshi Sugawa, and Tadahiro
Ohmi
E2015-12(P) Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited
Plasma Enhanced Chemical Vapor Deposition
ECS Transactions, Vol.66, Issue 4, Silicon Compatible Materials,
Processes, and Technologies for Advanced Integrated Circuits andEmerging Applications 5, pp.151-159, May 2015.
A. Teramoto, Y. Nakao, T. Suwa, K. Hashimoto, T. Motoya, M. Hirayama,S. Sugawa, and T. Ohmi
https://doi.org/10.1149/06604.0151ecst
E2015-13(C) Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using
Accurate Process Gasses Supply System
227th Meeting of The Electrochemical Society, Abs.1399, Chicago, May
2015.
Hisaya Sugita, Yasukasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya
Goto, Hidekazu Ishii, Satoru Yamashita, Akinobu Teramoto, Shigetoshi
Sugawa, and Tadahiro Ohmi
E2015-14(P) Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using
Accurate Process Gasses Supply System
ECS Transactions, Vol.66, Issue 4, Silicon Compatible Materials,

Processes, and Technologies for Advanced Integrated Circuits andEmerging Applications 5, pp.305-314, May 2015.
H. Sugita, Y. Koda, T. Suwa, R. Kuroda, T. Goto, H. Ishii, S. Yamashita, A.
Teramoto, S. Sugawa, and T. Ohmi
https://doi.org/10.1149/06604.0305ecst
E2015-15(C) Surface Metal Cleaning of GaN Surface Based on Redox Potential of
Cleaning Solution
227th Meeting of The Electrochemical Society, Abs.1404, Chicago, May
2015.
Kenji Nagao, Kenichi Nakamura, Akinobu Teramoto, Yasuyuki Shirai,Fuminobu Imaizumi, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro
Ohmi
E2015-16(P) Surface Metal Cleaning of GaN Surface Based on Redox Potential ofCleaning Solution
ECS Transactions, Vol.66, Issue 7, State-of-the-Art Program on
Compound Semiconductors 57 (SOTAPOCS 57), pp.11-21, May 2015.
K. Nagao, K. Nakamura, A. Teramoto, Y. Shirai, F. Imaizumi, T. Suwa, S.
Sugawa, and T. Ohmi
https://doi.org/10.1149/06607.0011ecst
E2015-17(C)Low Work Function LaB6 thin Films Prepared By Nitrogen Doped LaB6
target Sputtering
227th Meeting of The Electrochemical Society, Abs.2288, Chicago, May2015.
Hidekazu Ishii, Kentaro Takahashi, Tetsuya Goto, Shigetoshi Sugawa
and Tadahiro Ohmi
https://doi.org/10.1149/MA2015-01/44/2288

E2015-18(P) Low Work Function LaB6 Thin Films Prepared By Nitrogen Doped LaB6
Target Sputtering
ECS Transactions, Vol.66, Issue 41, Solid State Topics General Session,
pp.23-28, May 2015.
H. Ishii, K. Takahashi, T. Goto, S. Sugawa and T. Ohmi
https://doi.org/10.1149/06641.0023ecst

E2015-19(F) Structural Analyses of Thin SiO2 Films Formed by Thermal Oxidation ofAtomically Flat Si Surface by Using Synchrotron Radiation X-RayCharacterization
ECS Journal of Solid State Science and Technology, Vol.4, Issue 8,
N96-N98, June 2015.
Kohki Nagata, Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu
Teramoto, Takeo Hattori, and Tadahiro Ohmi
https://doi.org/10.1149/2.0131508jss
E2015-20(C) High quality pentacene film formation on nitrogen-doped LaB6 donorlayer
2015 Asia-Pacific Workshop on Fundamentals and Applications ofAdvanced Semiconductor Devices (AWAD 2015), pp. 225-229, June-July,
Korea, 2015.
Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto, and Tadahiro Ohmi
E2015-21(C) Drastic Suppression of the 1/f Noise in MOSFETs: Fundamental
Fluctuations of Mobility Rather Than Induced Mobility Fluctuations
2015 International Conference on Noise and Fluctuations (ICNF2015),
Invited, Xi’an, June 2015.
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa
https://doi.org/10.1109/ICNF.2015.7288580
E2015-22(C) A 80% QE High Readout Speed 1024 Pixel Linear Photodiode Array for
UV-VIS-NIR Spectroscopy
INTERNATIONAL IMAGE SENSOR WORKSHOP, pp.78-81, Vaals, TheNetherlands, June 2015.
Rihito Kuroda, Takahiro Akutsu, Yasumasa Koda, Kenji Takubo, HidekiTominaga, Ryuuta Hirose, Tomohiro Karasawa and Shigetoshi Sugawa
E2015-23(C) Analysis and Reduction of Floating Diffusion Capacitance Components ofCMOS Image Sensor for Photon-Countable Sensitivity
INTERNATIONAL IMAGE SENSOR WORKSHOP, pp.120-123, Vaals,
The Netherlands, June 2015.
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito

Kuroda and Shigetoshi Sugawa
E2015-24(C) A 20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity
and Power Consumption
INTERNATIONAL IMAGE SENSOR WORKSHOP, pp. 166-169, Vaals,
The Netherlands, June 2015.
Shigetoshi Sugawa, Rihito Kuroda, Tohru Takeda, Fan Shao, Ken
Miyauchi and Yasuhisa Tochigi
E2015-25(C) A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well
Capacity and 190-1000nm Spectral Response
INTERNATIONAL IMAGE SENSOR WORKSHOP, pp.312-315, Vaals,
The Netherlands, June 2015.
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito
Kuroda, Shigetoshi Sugawa
E2015-26(C) A Linear Response Single Exposure CMOS Image Sensor with 0.5eReadout Noise and 76ke- Full Well Capacity
SYMPOSIUM ON VLSI CIRCUITS, pp.C88-C89, Kyoto, 2015.
Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda and Shigetoshi
Sugawahttps://doi.org/10.1109/VLSIC.2015.7231334
E2015-27(F) Measurement and Analysis of Seismic Response in Semiconductor
Manufacturing Equipment
IEEE Transactions on Semiconductor Manufacturing, Vol.28, Issue3,
pp.289-296, August 2015.
Kaori Komoda, Masashi Sakuma, Masakazu Yata, YoshioYamazaki,Fuminobu Imaizumi, Rihito Kuroda, and Shigetoshi Sugawa
https://doi.org/10.1109/TSM.2015.2427807
E2015-28(C) 1/f Noise Performances and Noise Sources of Accumulation Mode Si(100)n-MOSFETs
Extended Abstracts of the 2015 International Conference on Solid State
Devices and Materials, PS-3-7, pp.96-97, Sapporo, September 2015.
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa

E2015-29(C) Proposal of Tunneling and Diffusion Current Hybrid MOSFET
Extended Abstracts of the 2015 International Conference on Solid State
Devices and Materials, PS-3-2, pp.86-87, Sapporo, September 2015.
K. Furukawa, R. Kuroda, T. Suwa, K. Hashimoto, A. Teramoto, and S.
SugawaE2015-30(C) Analysis and reduction of leakage current of 2kV monolithic isolator withwide trench spiral isolation structure
Extended Abstracts of the 2015 International Conference on Solid State
Devices and Materials, pp.804-805, Sapporo, September 2015.
Yusuke Takeuchi, Rihito Kuroda and Shigetoshi Sugawa

E2015-31(C) Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge Flows
228th Meeting of The Electrochemical Society, Abs.1848, Phoenix,October 2015.
YoshinobuShiba,Akinobu

Teramoto,Tomoyuki

Suwa,

Kensuke

Watanabe, Shinichi Nishimura, Yasuyuki Shirai, and Shigetoshi Sugawa
https://doi.org/10.1149/MA2015-02/47/1848
E2015-32(P) Effect of Oxygen Impurity on Nitrogen Radicals in Post-Discharge FlowsECS Transactions, Vol.69, Issue 39, pp.1-9, October, 2015.
Y. Shiba, A. Teramoto, T. Suwa, K. Watanabe, S. Nishimura, Y. Shirai,
and S. Sugawa
https://doi.org/10.1149/06939.0001ecst
E2015-33(W) Electrical Properties of MOSFETs Introducing Atomically Flat Gate
Insulator/Silicon Interface
IEICE Technical Report, Silicon Devices and Materials, Vol.115, No.280,
The Institute of Electronics Information and Communication Engineers,
SDM2015-74(2015-10), pp.17-22, October 2015.
Tetsuya

GOTO,Rihito

KURODA,Tomoyuki

SUWA,Akinobu

TERAMOTO, Toshiki OBARA, Daiki KIMOTO, Shigetoshi SUGAWA,
Yutaka KAMATA, Yuki KUMAGAI, and Katsuhiko SHIBUSAWA

E2015-34(F) Observation of sputtering of yttrium from Y2O3 ceramics by low-energy
Ar, Kr, and Xe ion bombardment in microwave-excited plasma
Japanese Journal of Applied Physics, Volume54, No.12, 128003(2015),
November 2015.
Tetsuya Goto and Shigetoshi Sugawa
https://doi.org/10.7567/JJAP.54.128003
E2015-35(F) Introduction of Atomically Flattening of Si Surface to Large-Scale
Integration Process Employing Shallow Trench Isolation
ECS Journal of Solid State Science and Technology, Vol.5, Issue2,
P67-P72(2016), November 2015.
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu
Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa,Yutaka Kamata, Yuki Kumagai andKatsuhiko Shibusawa

https://doi.org/10.1149/2.0221602jss
E2015-36(C) An Ultraviolet Radiation Sensor Using Differential Spectral Response ofSilicon Photodiodes
IEEE Sensors, pp.1847-1850, Busan South Korea, November, 2015.
Yhang Ricardo Sipauba Carvalho da Silva, Yasumasa Koda, SatoshiNasuno, Rihito Kuroda, Shigetoshi Sugawa
https://doi.org/10.1109/ICSENS.2015.7370656