Technical Program of TWHM 2022
Aug. 29 (Mon.)
Registration

16:00-18:00

Invited papaers :Oral presentation (25 min.)Welcome Reception

18:00-20:00

Cotributed papers :"Upgraded" Oral presentation (15 min.)

Cotributed papers :Short Presentation (3 min.) & Poster

Aug. 30 (Tue.)
SessionStart time

Alloted time

Opening

9:00

0:15

1. Plenary session

9:15

0:45

Coffee BreakNo.

5. Terahertz and mm-wave
devicesogy)

University of Bristol, United Kingdom

Plenary

Local time
@ online

10:00-10:20
10:20

0:25

2-1

Interface science and engineering for GaN-based MOS devicesHeiji Watanabe

Osaka University, Japan

Invited

10:45

0:25

2-2

High Mobility in SiC MOS Structures with Low Interface State Density

Tsunenobu Kimoto

Kyoto University, Japan

Invited

11:10

0:25

2-3

Recent Progress in Electrical Characterization of Al2O3/Diamond Interface

Xufang Zhang

Kanazawa University, Japan

Invited

11:35

0:25

2-4

Gallium oxides lateral devices: kV power transistor to high powerswitched mode RF amplifiers

Uttam Singisetti

University at Buffalo, USA

InvitedM. TorkyRensselaer Polytechnic Institute, USASPTakafumi. Kamimura

National Institute of Information andCommunications Technology, JapanSP

12:000:03

2-5

12:03

0:03

2-6

Determination of the Effective Critical Breakdown Field for Si, Wide, and Extreme
Bandgap Semiconductor Superjunction (SJ) Devices
Development of etching process for fabrication of Ga2O3 MOSFETs with self-aligned
recessed gate

12:10-13:20
13:20

0:25

3-1

Reinventing Power Electronics: NexGen Power Systems with NexGen Vertical GaN™ Dinesh Ramanathan

NexGen Power Systems, USA

Invited

13:45

0:25

3-2

Multi 2DEG Channel BRIDGE HEMT Technology for Millimeter-Wave Power
Amplifier and RF Switch Applications

Teledyne Scientific Company, USA

Invited

14:10

0:15

3-3

MBE grown AlScN/AlN/GaN high electron mobility transistors with regrown contacts Kazuki Nomoto

Cornell University, USAUpgraded

14:25

0:03

3-4

Lateral thickness change of the high-k film on GaN HEMT for uniform electric fieldYasuyuki. Miyamoto

Tokyo Institute of Technology. JapanSPZenji Yatabe

Kumamoto University, Japan

SPRyota Ochi

Hokkaido University, Japan

SPA. Baratov

University of Fukui, Japan

SPHaozhe Sun

Peking University, China

SP

14:28

0:03

3-5

Simple characterization of interface states in ALD-Al2O3/AlGaN/GaN structure atroom temperature

14:31

0:03

3-6

Possibility of the parallel conduction in AlGaN/GaN MIS-HEMTs

14:34

0:03

3-7

14:37

0:03

3-8

Anomalously high threshold voltage shift in Al2O3/AlGaN/GaN structures withregrown AlGaN layer
Effect of cap layer on the trap states in Si3N4/AlGaN/GaN MIS structure with LPCVD
grown gate dielectric

Keisuke Shinohara

14:40-15:00
15:00

0:25

4-1

A High Current E-mode GaN HEMT with Thin Barrier Layer

Edward Chang

National Chiao Tung Universty, Taiwan

Invited(online)

14:00
Aug.30

15:25

0:25

4-2Local substrate removal for next generation GaN-on-Silicon power transistorsFarid Medjdoub

CNRS-IEMN, France

Invited(online)

8:25
Aug.30

SP

15:50

0:03

4-3

Output power performance of In0.18Al0.82N/AlN/GaN MIS-HEMTs at 70 GHz

Issei Watanabe

National Institute of Information andCommunications Technology, Japan

15:53

0:03

4-4

PEALD AlN passivation for enhancement-mode p-GaN gated AlGaN/GaN HFET

J.-H. Yim

Hongik University, Korea

SPSP

15:56

0:03

4-5

High-frequency and multi-probe-Hall characterizations for AlGaN/GaN
heterostructures under Ohmic-metals

Kazuya Uryu

Japan Advanced Institute of Science andTechnology, Japan

15:59

0:03

4-6

Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN
surface

Yoshito Osawa

Hokkaido University, JapanSP

16:02

0:03

4-7

Estimation of device characteristics of normally-off type AlGaN/GaN MIS-HEMTs
with SiO2/Al2O3 double insulators fabricated by ALD

Keitaro Toda

Nagoya Institute of Technology, Japan

SP

16:05

0:03

4-8

UV assisted room temperature hydrogen sensor with SnO2 nanoparticles/Pd catalyst

Jeong-Jin Kim

Hongik University, Korea

SP

16:10-16:30
16:30

0:25

5-1

InP/GaAsSb DHBTs: Historical Evolution, Device Physics, and State-of-the-ArtPerformance

Colombo Bolognesi

ETH-Zürich, Switzerland

Invited(online)

16:55

0:25

5-2

Sub-THz and THz Double-Resonant-Tunnelling-Diode Patch-Antenna Oscillators

Michael Feiginov

Technical University Wien, Austria

Invited

17:20

0:03

5-3

Ultimate Frequency Limit of Direct Modulation in Resonant-Tunneling-Diode
Terahertz Emitters

Masahiro AsadaTokyo Institute of Technology, JapanSP

17:23

0:03

5-4

Study for enhanced THz radiation using InGaSb/InAs heterostructures

Yoshiyuki Takagi

Osaka Institute of Technology, JapanSP

17:26

0:03

5-5

Asymmetric FET structure on Graphene for terahertz applications

Chao Tang

Tohoku University, JapanSP

17:29

0:03

5-6

Characterization of zero bias detection of monolithic integrated rectennas for 300 GHz
Katsuhiro Usuiband by using GaAsSb/ InGaAs backward diodes

Tokyo Metropolitan University, JapanSP

17:32

0:03

5-7

A progress report to clarify ultimate functionality of InGaAs/InAlAs triple-barrier
resonant tunneling diode towards application for terahertz wireless communication

Heito Ito

Tokyo Metropolitan College of Industrial
Technology, JapanSP

5-8

A symmetric-type monostable-bistable transition logic element (SMOBILE) withfrequency-based I/O isolation for THz-signal under-sampling

Umer Farooq

University of Toyama, Japan

17:35
6. Poster Viewing I

Type

Martin Kuball4. GaN related devices IICoffee BreakAffiliation

Unleashing the power of diamond – Heterogenous integrations for RF and powerelectronics

3. GaN related devices I

Coffee Break

Speaker

1-1

2. WBG MOS/MIS FETs

Lunch

Title

0:03

17:40-19:00

Poster no. 2-5~2-6, 3-4~3-8, 4-3~4-8, 5-3~5-8 will be presented in person.

SPPoster

9:30
Aug.30Aug. 31 (Wed.)
SessionStart time

Alloted time

No.

8:30

0:25

7-1Opportunities and Challenges of GaN Super-Heterojunction

Rongming Chu

Department of Electrical Engineering,Pennsylvania State University, USA

Invited(online)Local time
@ online
19:30
Aug.30

Eduardo M. Chumbes

Raytheon Technologies, USA

Invited(online)19:55
Aug.30Speaker

Affiliation

Type

8:55

0:25

7-2

ScAlN/GaN Heterojunction Field Effect Transistors for Ultra-high power and efficient
RF Power Amplifiers

9:20

0:15

7-3

Ferroelectric-Gated GaN HEMTs for mm-Wave Switch Applications

Hansheng Ye

University of Notre Dame, USA

Upgraded

7-4

Demonstration of high current and E-mode operation in multi finger type EID
AlGaN/GaN MOS-HEMTs on Si substrate

Takuma. Nanjo

Mitsubishi Electric Corporation, JapanUpgraded

7. GaN related devices III

9:35

0:15
9:50-10:10

Coffee Break

8. GaN related devices,
techniques and estimations

Title

10:10

0:25

8-1

AlN based devices for new power electronic switches and mm-wave power MMICs

Joachim Würfl

Ferdinand Braun Institut, Germany

Invited(online)

10:35

0:25

8-2

Demonstration of GaN IMPATT diodes at microwave frequencies

Manabu Arai

Nagoya University, JapanInvited

11:00

0:03

8-3Characterization of Fe-doping Induced Trap in AlGaN/GaN HEMTs using Low
Frequency Y22 Measurement

Taiki Nishida

Saga University, JapanSPR. Kagawa

Osaka City University, Japan

SPAkira Mase

Nagoya Institute of Technology, JapanSP

11:03

0:03

8-4

Nano-structural and electro-thermal analyses of GaN/3C-SiC on-diamond HEMTs
prepared by bonding-first process

11:06

0:03

8-5

Carrier Dynamics Simulation and Device Design of GaN-based npn HBTs withQuaternary AlGaInN Emitter and GaInN BaseStart time

Alloted time

No.

8:30

0:25

9-1

Diamond 2 Inch-Wafer Growth and 875MW/cm2 Power FET

Makoto Kasu

Saga University, Japan

Invited

8:55

0:25

9-2

Correlation between Dislocation and Reverse Leakage Current in GaN pn Junctions

Yoshio Honda

Nagoya University, Japan

Invited

9:20

0:03

9-3

Field Emission Properties of selective area grown GaN Nanowires on n+ Si substrates

G. Doundoulakis

Florida International University, USASP

9:23

0:03

9-4

Study of Ti/Al/Ti/Au ohmic contacts to AlGaN/GaN heterostructures

Hiroshi Okada

Toyohashi University of Technology, JapanSP

9:26

0:03

9-5

Growth of N-polar In-rich InAlN by MOCVD

S. HasenöhrlSlovak Academy of Sci., Slovakia

SP

9:29

0:03

9-6

Nagoya University, Japan

SP

9:32

0:03

9-7

Nagoya Institute of Technology, JapanSP

Nagoya University, JapanSP

Sumitomo Electric Industries, Ltd., JapanSP

Excursion

11:30

Banquet

19:00

3:10
Aug.31

Sept. 1 (Thu.)
Session

9. WBG devices, fabrications,and applications

10. InP related devices I

Type

0:03

9-8

9:38

0:03

9-9

A numerical modeling of capacitance-voltage characteristics of GaN MIS diode

9:41

0:03

Demonstration of Rectifier Characteristics of AlGaN/GaN HEMT Gated-Anode Diode
9-10
Naoya Kishimotofor Microwave Wireless Power Transfer

Nagoya Institute of Technology, Japan

SP

9:44

0:03

9-11 1.8-2.2 GHz Continuous GaN HEMT Class-F Amplifier Using 1-Port CRLH TL

Eri Tsuji

Shibaura Institute of Technology, Japan

SP

9:47

0:03

9-12 High heat-dissipation of high thermal conductive Carbon Composite (CC)

H. Saito

Nagoya Institute of Technology, Japan

SP

9:50

0:03

Fabrication of N-Polar AlGaN/AlN Heterostructure Field Effect Transistors and its
9-13Electrical Properties

N. Okada

Yamaguchi University, Japan

SP

9:53

0:03

9-14

Makoto Hirose

Osaka City University, Japan

SP

0:03

Reverse Leakage Mechanism in GaN Vertical SBD with High-Energy Fluorine Ion
9-15
Implanted Guard Rings

Jiayue Xu

Peking University, China

SPNTT Corporation, Japan

InvitedElectrical properties in wafer-bonding-based GaAs/GaN junctions on free-standing
substrates

Kenya Nishiguchi

10:00-10:20
10:20

0:25

10-1

10:45

0:03

10-2

10:48

0:03

11:00-12:20

Lunch

12:20-13:20

Closing

Self-aligned Ohmic Contact Formation with Selectively Grown n+-GaN Layer by Using
K. KodamaPicosecond Laser Deposition
Fabrication and device characteristics of AlGaInN/GaN HEMTs on Single-Crystal AlN
Sakura Tanaka
SubstrateAffiliation

9:35

11. Poster Viewing II

12. InP related devices IISpeaker

Si- or Ge-sputtering-power dependence of carrier concentration in n-type GaN films
S. Yamadadeposited by low-temperature sputtering technique

9:56
Coffee BreakTitle

Recent Progress in Metal-Organic Vapor Phase Epitaxy of InP-based Ultrahigh-Speed
Takuya Hoshi
Transistors

Investigation of carrier transport properties for InxGa1-xAs/In0.52Al0.48As QuantumHyo-Jin Kim
Well HEMTs through modeling their transconductanceAnalysis of source resistance for In0.8 Ga0.2 As quantum-well high-electron-mobility
10-3
Ji-Hoon Yootransistor with source resistance modeling

SPKyungpook National University, Korea

SPPoster no. 8-3~8-5, 9-3~9-15, 10-2~10-3 will be presented in person.

13:20

0:25

12-1 InGaAs Multi-Bridged-Channel Field-Effect-Transistors for future CMOS

13:45

0:15

12-2

14:00

0:15

12-3 Development of GaInSb n-Channel HEMTs Using Experiments and Simulations

14:15

Kyungpook National University, Korea

Comparison of DC/RF characteristics of InP HEMTs with In-rich InGaAs and InAs
composite channel

PosterHyeon-Bhin Jo

Kyungpook National University, Korea

InvitedT. Sasaki

NTT Corporation, Japan

Upgraded

A. Endoh

Tokyo University of Science, Japan

Upgraded

Local time
@ online

TWHM 2022 Technical Program at a glance
Aug. 29 (Mon.)

Aug. 30 (Tue.)Aug. 31 (Wed.)

Sept. 1 (Thu.)

9:00

Opening

7. GaN related
devices III

9:30

1. Plenary session

9. WBG devices,fabrications, andapplications

10:00

Coffee BreakCoffee BreakCoffee Break
10. InP related
devices I

8:30

10:30
11:00

2. WBG MOS/MIS
FETs

11:30

8. GaN related
devices, techniquesand estimations

11. Poster Viewing II

12:00
12:30

Lunch13:00

Lunch
12. InP related
devices II

13:30

3. GaN related
devices I

14:00
14:30

Closing

Coffee Break

15:00

4. GaN related
devices II

15:30
16:00

Excursion

Coffee Break

16:30
17:00

Registration

5. Terahertz and mmwave devices

17:30
18:00

6. Poster Viewing I

18:30
19:00

Welcome Reception

19:30
20:00
20:30
21:00

Banquet