■Access Map

Research Center for
Integrated Quantum Electronics(RCIQE)
量子集積エレクトロニクス研究センター

学内共同教育研究施設

Hokkaido University
北海道大学

Research Center for Integrated Quantum Electronics, Hokkaido University
Address: North 13 West 8, Sapporo 060-8628, Japan
Phone: +81-11-706-7171, Fax: +81-11-716-6004, HP： http://www.rciqe.hokudai.ac.jp

Research Area for Quantum Intelligent Devices■Objective of RCIQE
Research Center for Integrated Quantum Electronics (RCIQE) promotes research on nano-electronics based on semiconductor
nanotechnology guided by two basic concepts:(1) Need for creating innovative technologies required for materialization of a highly information-based green energy society via
science & technology that utilize the quantum-mechanical effect, and transferring the findings of research on cutting-edge
electronics to the industrial circle for practical applications through collaborative research.
(2) Pursuit of the scientific principles, underlying the fabrication of novel semiconductor nanostructures as well as the factors that
control the physical properties and structure of the novel nano-materials, aiming at promotion of applied research linked toproduction of the green energy and ultra-low power consumption devices and integrated circuits. This requires promoting researchin various research areas at global scale while ensuring the successive transfer of the knowledge accumulated in science andtechnology to new generation of researchers.
In order to respond to very strong demand for “low environmental stress” technology essential for realization of a low carbon
society, RCIQE has been prioritizing research in the field of environmental-friendly, low-energy and integrated quantum electronics.

■Research Groups
Research Area for
Quantum Integrated
Processing
Professor
1
Associate Professor 1
Research Area for
QuantumIntelligent Devices
Spintronics
Molecular
Nanoelectronics
Functional Devices

Professor
1
Associate Professor 1
Assistant Professor* 1

Semiconductor Nanowire
Electron and Optoelectronic
Devices
Functional Electron Devices

IntegratedQuantumElectronics
Research Area forQuantum Crystal
Photonics
GaN-Based Devices
Nano-Scale Interface
ControlHybrid Nanostructures* FY2008 ‐ FY2012

Professor
1
Associate Professor 1

Prof. Kanji Yoh, Assoc. Prof. Taketomo Sato
Spin transistor
technology

The objective of the project is to create newfunctional devices based on various types of lowdimensional quantum nanostructures fabricatedutilizing molecular beam epitaxy (MBE), selfassemble formation techniques and so on. Basedon the control of electronic spin system, we aretrying to develop the new and various functional
devices for the realization of the quantum
information-processing.
1) Semiconductor spin transistors2) Graphene monolayer transistors
3) HighHigh-efficiency energyenergy-conversion devices

Self-assembled formation ofsemiconductor porous
structures

High-efficiency energyconversion utilizing a large
pore surface as a reaction field

Professor
1
Associate Professor 1

Optimal estimation of spindiffusion time and diffusion length

Research Area for
Integrated
Quantum Systems

Research Area for Integrated Quantum Systems
Prof. Eiichi Sano, Assoc. Prof. Masamichi Akazawa

Ultra-Low Power
Communication LSIs
Terahertz Devices
Metamaterial

Research Staff
Visiting Professors
Specially‐Appointed Professors
Research Institute Fellows
Technical Specialist2241

CMOS sensor LSI
THz amplifier with graphene
In order to deploy future ubiquitous network,with -W power consumption(EM simulation)communication circuits and devices are being
20
investigated in this laboratory. The research
0activity includes terahertz devices andAmplified THz wave-20
electromagnetic materials using nano-carbon
IncidentTHz wave -40
such as carbon nanotube and graphene,
2.4-GHz Optical-60
bandpumping
microwave circuits based on metamaterial design-80
detector/
051015Time [ps]concept, electronic property of InAlN/GaN heteroamplifierinterface, and CMOS sensor LSIs with -W power
2.2
Metal
2consumption.
Clock and data
Graphene

Research Area for Quantum Crystal Photonics
Prof. Tamotsu Hashizume, Assoc. Prof. Shinjiro Hara, Assist. Prof. Hiroaki Koga
The research target is fabrication andOriginally developed Multi-Mesa-Channel
characterization of advanced nanostructures
AlGaN/GaN Transistor (MMC-HEMT)with high density and periodicity, on the basisof GaN-and GaAs-based semiconductors. The
control of electronic and photonic properties ofsuch nanostructures leads to various kinds ofnovel devices applicable to next-generation
integrated systems and power conversion
systems.
1) Interface control of GaNGaN-based
heterostructures
2) GaNGaN-based power transistors for nextnextgeneration inverters
3) Novel bottombottom-up fabrication method forferromagnetic/semiconducting hybridnanostructures and magnetomagneto-nanoelectronic
device applications

Novel Bottom-Up Fabrication Method for
Ferromagnetic Nanoclusters and MagnetoNanoelectronic Device Applications
ElectrodeFerromagnetic
NCs

Non-Magnetic
Metal InterLayers

120oElectrodeNano-Magnetic Sensor

Ferromagnetic
Nanoclusters(NCs)

Research Area for Quantum Integrated Processing
Prof. Takashi Fukui, Assoc. Prof. Seiya Kasai
Main subject of this laboratory is research and development ofsemiconductor-nanowire-based devices and related technologies
for green electronics. The semiconductor nanowire potentiallyrealizes ultra-low-power consumption and highly efficient operationof the electron and optoelectronics devices, since it canconcentrate and control the electrons and photons in one
dimension with small energy. The nanowire is formed by selectivearea crystal growth technique and it is applied to ultra-low power
consumption transistors, solar cells, light emitting devices,functional electron devices, and their integrated systems.
1) Formation of IIIIII-V semiconductor nanowire by selective area
crystal growth2) NanowireNanowire-based electron and optoelectronic devices
3) Functional electron devices

Emittance

recovery circuit

1) Novel nanonano-carbon materials and devices2) Metamaterials integrated with Si CMOS
3) Electronic property of InAlN/GaN heterohetero-interface
4) CMOS sensor LSIs with -W power consumption

Mirror

20

1.8
1.6
1.4
1.2

1
0.8

2

2.5
3
3.5
Frequency [THz]4