August 26 (Mon.)
Registration

Invited papers

16:00-: Oral presentation (20 min & 5 min Q&A)

Contributed papers (Upgrade) : Oral presentation (10 min & 5 min Q&A)
Welcome Reception

18:00-20:00

Contributed papers: Short oral presentation (3 min w/o Q&A) & Poster presentation

August 27 (Tue.)
Session

August 16, 2024

Start

AllottedNo.

Title

Speaker

timetime(min)Opening

9:00

15

1. Keynote

9:15

45

1-1

Technology of AlN-based power transistors

Oliver Hilt

10:00

45

1-2

Spintronics Nonvolatile Memory -A metal/insulator heterostructure -Hideo Ohno

2-1Al-rich AlGaN alloys for RF and power transistors

Andrew Allerman

Elke Meissner
Michihiko Suhara
Coffee BreakToshiharu Kubo
David Meyer

25

11:30

25

2-2

11:55

3

2-3

11:58

3

2-4

12:01

3

2-5Lunch

13:30

25

3-1

13:55

15

3-2

14:10

3

3-3

14:13

3

3-4

14:20

25

4-1

14:45

15

4-2

Yasuyuki Miyamoto

AlScN/GaN HEMTs: Towards Higher Power and Bandwidth at Millimeter-Wave
Frequencies
Temperature Dependent S-Parameter Measurement of GaN-Based IMPATT
DiodesInfluence of surface treatment on short channel effect in GaN HEMTsLow- and High- Field 2DEG Transport Properties in AlGaN/GaN at High
Temperatures

Sebastian Krause

15:00

34-3

15:03

34-4

15:06

34-5

Michael Feiginov

Fraunhofer IAF/Albert-Ludwig
Univ. of Freiburg, Germany

invitedinvitedsp

Yusuke Wakamoto

Cryogenic InxGa1-xAs/In0.52Al0.48As quantum-well HEMTs for quantum
computing

Univ. of Tokyo/Sumitomo ElectricIndustries, Ltd., Japansp

Kyungpook National Univ., SouthDae-Hyun Kim

34-6

15:12

34-7

fmax
InP-based Double Heterojunction Bipolar Transistors with InP/InAlAs
Composite Collector
Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMTstructures
3D Rectification Effect in Grating-Gate InGaAs-Channel HEMT for THz
Detection
Resonant-Tunneling-Diode Oscillators with Double Slot-Ring Antennas forHigh-Directive and High-Power Terahertz Radiation

Ryuto Machida

NICT/Tokyo Univ. of Sci., Japan

Takuya Hoshi

NTT Corporation, Japan

Tomoki Jinnai

34-8

performance in InGaAs/InAlAs triple-barrier resonant tunneling diodes

Exploring limitations of slot-antenna resonant-tunnelling-diode oscillators

characteristics and quantum transport modelfor InGaAs/InAlAs triple barrier

UTC-PD-Integrated HEMT
microscope employing a resonant tunneling diode (RTD) ‒ Proposal andJapanspsp
invited

Shoei EndoTokyo Tech., Japanupgrade

Masato Hatori

Michael Feiginov

Naoto Satoby using GaAsSb/ InGaAs backward diodes with integrated bow-tie or log-spiral Hijiri Shimokawatoko
300-GHz-Band Optical-to-Wireless CarrierFrequency Down-Conversion by aTokyo University of Sci./NICT,

upgradeTohoku Univ., Japan

Shota Horiuchi

Umer Farooq

demonstration in microwave frequency range ‒Coffee BreakinvitedAkira SatouA frequency delta-sigma modulation (FDSM) based scanning near-field THz
15:15

Korea/Texas Tech. Univ., USA/KAIST, South Korea

Double δ-doped Al0.40In0.60Sb/Ga0.22In0.78Sb HEMTs with over 450 GHz-antennas

Tokyo Metro. Univ./Tokyo Metro
Col. of Ind. Tech./NICT, Japan
TU Wien, Austria/Le Quy Don Tech.
Univ., Vietnam
Tokyo Metro Col. of Ind. Tech.
/Tokyo Metro. Univ., JapanTokyo Metro. Univ./Tokyo Metro
Col. of Ind. Tech., Japan
Tohoku Univ., Japan
Univ. of Toyama/Hokuriku
Polytechnic Col, Japanspspspspsp

sp

15:20-15:40
15:40

6. Poster Viewing 1Univ., USAspresonant tunneling diodes
15:09

Samuel Graham

Sandia National Labs./Ohio StateTokyo Tech., Japan

Measurements and analysis of zero bias detection rectennas for 300 GHz band

Koh Matsumoto

keynoteYasuyuki Miyamoto

Anovel method of time domain analysis combining theoretical model of I-V

5. Power 1

keynoteUniv. of Notre Dame, USA

integrated with bowtie antennas

Safumi Suzuki

Tohoku Univ., JapanPatrick Fay

Experimental evaluation of bias-dependent 230-270 GHz oscillation and gain

4. THzGermany

12:05-13:30

3. High Frequency

Dae-Hyun Kim

Ferdinand-Braun-Institut gGmbH,Type

10:45-11:05
11:05

2. GaN/UWBG RF 1

Affiliation

25

5-1

Vertical Ga2O3 (010) FinFETs with (100) Sidewalls Treated by Nitrogen RadicalIrradiation

16:05

25

5-2

Multidimensional Power Devices in GaN and Ga2O3

16:30

15

5-3

Gallium Oxide Electronics ‒ Advanced Device Designs

16:45

35-4

16:48

35-5(withdraw)

5-6

16:51

35-7

16:54

35-8

16:57

35-9

17:00

35-10

17:03

35-11

17:10-18:30

Switching losses and their mitigation in lateral Ga2O3 power MOSFETs withhigh-permittivity dielectric passivation
Fast (4.38 ns) dynamic switching operation of NO2-doped p-channel diamond
MOSFETs
Growth and device fabrication of p-channel Al0.6Ga0.4N/AlN HFETs on singlecrystal AlN substrate
Wider Gate Voltage Range of p-GaN/AlGaN/GaN HFET Employing Dual
Dielectric Films for Gate Formation
Effect of Negative Gate Bias on the Off-State Blocking Characteristics of pGaN Gate HEMT
Tri-gate Normally-Off Power MIS-HEMT with different Fin Configuration andFerroelectric Charge Storage Gate Stack
AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current
blocking layer and δ-doped conductive buffer layer
Heavy Ion Induced SEB Robustness of Wide-bandgap Semiconductor Vertical
Schottky Barrier Diodes

Masataka Higashiwaki
Yuhao Zhang

Osaka Metro. Univ./ NICT/Tokyo
Univ. of Agric. and Tech., JapaninvitedVirginia Tech, USA

invitedMartin KuballUniv. of Bristol, UK

upgradeWenpeng Zhou

HKUST, Hong Kongsp(Pre-Recorded Video)

Tomoki Shiratsuchi
Hitoshi Susuki
Min-Gi Jeong

Saga Univ./National Inst. of Tech.,
Kure Col., Japan
Nagoya Inst. of Tech., Japan
Hongik Univ./ChipsK Corp., SouthKoreaspspsp

Jiaojiao SongPeking Univ. Chinasp

Rahul Rai

NYCU, Taiwan/IITKanpur, Indiasp

Toshiharu Kubo

Nagoya Inst. of Tech., Japansp

Zhaowen He

Rensselaer Polytechnic Inst., USA

sp

No. 2-3, 2-4, 2-5, 3-3, 3-4, 4-3, 4-4, 4-5, 4-6, 4-7, 4-8, 5-4, 5-5, 5-7, 5-8, 5-9, 5-10, 5-11

August 28 (Wed.)
Session

7. Power 2
Yoshitsugu Yamamoto

Martin KuballStart

Allottedtimetime(min)

8:30

25

7-1

8:55

25

7-2

9:20

15

7-3

9:35

3

7-4

Coffee BreakNo.

Title
High Performance Vertical GaN-on-GaN pn Power Diodes
Die-Level Functional Off-Chip Characterization of Power Devices Using OpticalTechniques
High performance fully vertical GaN on Silicon PIN diodes for next generation
power devices
Fabrication of vertical GaN junction barrier Schottky diodes using Mg ion
implantation

Affiliation

TypeWu Lu

Speaker

Ohio State Univ., USA

invitedXavier Perpinya

IMB-CNM, Spain

Youssef Hamdaoui
Kazuki Kitagawa

CNRS-IEMN, France/Siltronic AG,
Germany/Ghent Univ., Belgium
Nagoya Univ./Toyota Central R&DLabs. Inc., Japaninvitedupgradesp

9:40-10:00
Univ. of Maryland/Univ. of Virginia
10:00

25

8-1

Considerations for the Thermal Design of Ultrawide Bandgap Semiconductor
DevicesSamuel Graham/Univ. of South Carolina/UCLA/Georgia Tech/Naval Research

invitedLab./Univ. of Notre Dame, USA
10:25

25

8-2

Heterogenous diamond-GaN integration for device-level thermal management

Mohamadali Malakoutian

10:50

38-3

P-type Ohmic Contact with Annealed Mg Process

Min-Jeoung Kim

Process

10:53

38-4

Masataka Higashiwaki

10:56

38-5

8. GaN ThermalManagement,Xavier Perpinya
10:59

38-6

11:02

38-7

11:05

38-8Excursion

11:30-Banquet

19:00-21:00

Fabrication of Recessed-gate AlGaN/GaN HEMTs utilizing Contactless
Photoelectrochemical (CL-PEC) Etching
Photo-electrochemical (PEC) etching and characterization of the damaged GaN
surface
Multi-probe Hall measurements for Ohmic contacts to thin-AlGaN/GaN
heterostructures with no two-dimensional electron gas
Novel on-wafer Hall measurement method with ohmic formation using highvoltage pulses

Stanford Univ., USA
Hongik Univ./ChipsK Corp., SouthKorea

invitedsp

Naoki Shiozawa

Hokkaido Univ., Japansp

Takahiro Shimazaki

Hokkaido Univ., Japansp

Advantest Laboratories Ltd.
Kazuya Uryu

/JAIST/Mitsubishi Electric Corp.,

sp

Japan
K. Kodama

Simulation study on GaN-based npn HBTs with MQW structured p-base region Ryosei Inoue

NYCU, Taiwan/Yamamotogiken/Seiken, Japan
Nagoya Inst. of Tech., Japansp
sp

August 29 (Tue.)
Session

9. GaN/UWBG RF 2
Yohei Otoki
Patrick Fay

Start

Allotted

timetime(min)

8:30

25

9-1

8:55

25

9-2

9:20

15

9-3

9:35

3

9-4

9:38

3

9-5

Coffee BreakNo.

25

10-1

10:30

25

10-2

Interface

10:55

3

10-3

Toshi-kazu Suzuki

10:58

310-4

11:01

310-5

11:04

310-6

10. GaN Dielectric

Enrico Zanoni

11. Poster Viewing 2Typeinvited

Transport Properties in GaN under High Electric Field

Takuya Maeda

Univ. of Tokyo, Japaninvited>200 GHz fMAX MBE Grown AlScN/GaN High Electron Mobility Transistors

Kazuki Nomoto

Cornell University, USA

upgradeRitsuki Takahashi

Shibaura Inst. of Tech., Japansp

Keiichi Matsushita

WIN Semiconductors Corp., Taiwan

sp

Tamotsu Hashizume

IMaSS, Nagoya Univ., Japan

achieving control of short-channel effects, deep levels and reliability

On the FET Drain-Source Capacitance Compensation Method forMicrowave
GaN HEMT Class-E Power Amplifiers
Reliability Improvement of AlGaN/GaN HEMTs for Q-band and V-bandApplications

MOS interface control for GaN FETs and HEMTs
Engineering of Interface Charges in AlSiO/AlN/p-type GaN-MOSFETs Toward
Improvements of Threshold Voltage Stability and Channel Mobility
Low-state-density Al2O3/n-GaN interfaces using mist chemical vapor
deposited Al2O3 gate insulator
Improved device performance in in-situ SiN/AlN/GaN MIS-HEMTs with ex-situ
HfO2 and Al2O3 passivation by atomic layer depositionImpact of post metallization annealing in EID AlGaN/GaN MOS-HEMTs
Study on Effects of Mechanical Stress in Normally-off EID AlGaN/GaN MOSHEMTs by TCAD Simulation

Tetsuo Narita
Zenji Yatabe
Pradip Dalapati
Takuma Nanjo
Toshiyuki Oishi

Toyota Central R&D Labs. Inc.
/Nagoya Univ., Japan
Kumamoto Univ./Hokkaido Univ.,Japan
Nanyang Tech. Univ., Singapore
Mitsubishi Electric Corp./SagaUniv./Nagoya Inst. of Tech., Japan
Saga Univ./Mitsubishi ElectricCorp., Japaninvitedinvitedspspspsp

No. 7-4, 8-3, 8-4, 8-5, 8-6, 8-7, 8-8, 9-4, 9-5, 10-3, 10-4, 10-5, 10-6, 12-4, 12-5

12:10-13:30
13:30

25

12-1

13:55

25

12-2

14:20

25

12-3

Materials & Devices
Naoteru Shigekawa

Closing

Affiliation
Univ. of Padova, Italy

11:10-12:10

Lunch

Toshiyuki Oishi

Speaker
Enrico Zanoni

9:45-10:05
10:05

12. Emerging

Title
Scaling of GaN HEMTs for microwave and millimeter-wave applications:

14:45

3

12-4

14:48

3

12-5

14:55

15

Textured Solar Arrays for Stratospheric UAV
Large-Area Ultra-Heavy Boron-Doped Diamond Films: Advanced SensingMaterial for Electrochemical Fingerprinting
Wafer-Scale Heterogeneous Integration of Functional Materials for HighPerformance Power, Photonic and RF Devices
Wafer-scale single-crystalline GaN-based heterogeneous integration materialby ion-cutting technique
Effect of external stimulation on 1/ƒ dynamics in 2D cellular automaton

Noren Pan

Microlink Devices Inc., USA

invitedShinya Ohmagari

AIST, JapaninvitedXin OuTiangui You
Hazumi Ueda

SIMIT, Chinese Academy of Sci.,
China
SIMIT, Chinese Academy of Sci.,
China
Hokkaido Univ., Japaninvitedspsp

August 26 (Mon)

August 27 (Tue)August 28 (Wed)August 29 (Thu)

8:30

9:00

9:00-9:15 Opening

9:30

9:15-10:45
1. Keynote

10:00

Oliver Hilt
Hideo Ohno

10:30
10:45-11:05 Coffee Break
11:00

8:30-9:40

8:30-9:45

7. Power 2

9. GaN/UWBG RF 2

Wu Lu

Enrico Zanoni

Xavier Perpinya

Takuya Maeda

9:40-10:00 Coffee Break

9:45-10:05 Coffee Break

10:00-11:10

10:05-11:10

8. GaN Thermal

10. GaN DielectricManagement, Process

Interface

Samuel Graham

Tamotsu Hashizume

Mohamadali Malakoutian

Tetsuo Narita

11:05-12:05
2. GaN/UWBG RF 1

11:30

11:10-12:20

Andrew Allerman

11. Poster Viewing 2

Sebastian Krause

12:00

12:30

12:05-13:30

12:20-13:30

LunchLunch

13:00

13:30

13:30-14:20

13:30-14:55

3. High Frequency

12. Emerging Materials &14:00

Dae-Hyun Kim

Devices

14:30

14:20-15:20

Noren Pan

4. THzAkira Satou

15:00

Shinya Ohmagari
Xin Ou11:30Excursion
with Lunch Box

15:20-15:40 Coffee Break

15:30

16:00

15:40-17:10

16:30

Masataka Higashiwaki

5. Power 1
Yuhao Zhang

16:0017:00

Registration

17:30

17:10-18:30
6. Poster Viewing 1

18:00

18:30
18:00-20:00
19:00

Welcome Reception

19:30
19:00-21:00
20:00

20:30

Banquet14:55-15:10 Closing