TWHM 2019 Program at a glance
Mon. 26, Aug.
8:30
8:45
9:00

Tue. 27, Aug
8:45-9:00 Opening
9:00-9:45
1. Plenary Session
G. Meneghesso
9:45-10:05 Coffee

9:30
10:00

10:05-11:07
2. WBG Materials & Devices 1
T. Paracios, H. G. Xing

10:30
11:00

Wed. 28, Aug.

Thu. 29, Aug.

8:30-9:34
8. GaN Device Technologies
J-T. Chen

8:30-9:43
10. THz Devices & Emerging
Technologies
M. Asada

9:31-9:50 Coffee
9:50-11:05
9. RF and High Speed Device
Technologies 2
Y-K. Chen, S. Shinjo, J. S. Moon

11:10-12:06
3. WBG Devices and Materials 2
S. Rajan, K. Kaneko

11:30

9:43-10:05 Coffee
10:05-11:06
11. Nobel Process &Characterization
F. Horikiri
11:06-12:20
11:06-12:20
12. Poster Viewing
Viewing

12:00
12:06-13:20
Lunch

12:30

12:20-13:40 Lunch

13:00
13:20-14:37
4. GaN MOS/MIS & Related
Technologies
T. Hosoi, K. Ueno

13:30
14:00
14:30

14:37-15:00Coffee

15:00

15:00-15:59
5. WBG Materials & Devices 3
T. Taniguchi, S. Ohmagari

15:30
16:00
16:30
17:00

16:00~18:00
Registration

11:05-18:50
Excursion
with Lunch Box

15:20-15:30 Closing

15:54-16:10
15:59-16:20 Coffee
Coffee16:20-17:06
6. RF and High Speed Device
Technologies 1 D-H. Kim

17:06-18:20
7. Poster Viewing

17:30
18:00
18:30
19:00

18:00~20:00
Welcome Reception

19:30
20:00
20:30
21:00

13:40-15:20
13. GaN Power Devices
M. Uren, E. Missner,
P. Parikh, H. Handa

19:00-21:00
BanquetTechnical Program of TWHM2019
Invited papers : oral presentation ( 25 min. )Contributed papers ( Upgraded ) : oral presentation ( 15 min )Contributed papers : short oral presentation ( 3 min. ) & Poster

Aug.27 (Tue.)
Session

Time

No.

Title

Speaker

Affiliation

TypeOpening

8:45

1. Plenary(9:00 - 10:45)

9:00

1-1

Reliability of GaN HEMTs

G. Meneghesso

Univ. of Padova,
Italy

Plenary

10:05

2-1

GaN Fin FET Technology for Power and RF Applications

T. Palacios

MIT, USA

Invited

10:30

2-2

H. G. Xing

Cornell Univ., USA

Invited

10:55

2-3

X. Zhou

Rensselaer Polytechnic
Inst., USA

SP

10:58

2-4

Y. Li

Peking Univ., China

SP

11:01

2-5

M. Matys

Nagoya Univ., JapanSP

11:04

2-6

GaN-on-GaN HEMTs with High Breakdown Critical Fields A. Aoai

Univ. of Fukui, JapanSP

11:10

3-1

Material and Device Engineering for Gallium Oxide
Electronics

Ohio State Univ. USAInvited

11:35

3-2

P-type α-(Ir,Ga)2O3 thin films in Gallium Oxide Electronics K. Kaneko

Kyoto Univ., Japan

Invited

12:00

3-3

Aperture size engineering of current aperture vertical Ga₂O₃
MOSFETsM. H. Wong

NICT, JapanSP

12:03

3-4

Thermal Management Strategies for β-Ga2O3 MOSFETs

J. W. Pomeroy

Univ. of Bristol, UKSP

13:20

4-1

Gate stack engineering for GaN power MOSFETs

T. HosoiOsaka Univ., Japan

Invited

13:45

4-2

MOSFETs on Mg implanted GaN and the application tovertical DIMOSFETs

K. UenoFuji Electric, Japan

Invited

14:10

4-3

Light-emitting ICs with integrated vertical LED/quasi-vertical
Z. Guopower UMOSFET in GaN

Rensselaer Polytechnic
UpgradedInst., USA

14:25

4-4

Effects of forming gas annealing depending on gate electrodeN. Yoshidamaterials in ALD-Al2O3/AlGaN MIS-HEMT

Nagoya Inst. of Tech. ,JapanSP

14:28

4-5

Improved gate controllability of Al2O3-gate AlGaN/GaN
HEMTs grown on GaN substrates

R. Ochi

Hokkaido Univ., JapanSP

14:31

4-6

Fabrication of AlGaN/GaN transistors with SiO2 gateinsulator formed by atomic oxygen at ground state extracted
from a surface-wave generated plasma

H. Okada

Toyohashi Univ. ofTech., JapanSP

14:34

4-7

characterization of AlxTi1-xOy thin films synthesized using
mist-CVD

Z. Yatabe

Kumamoto Univ.,
JapanSPCoffee Break(9:45 - 10:05)

2. WBG Devices
and Materials 1(10:05 - 11:07)

3. WBG Devices
and Materials 2(11:10 - 12:06)

Power Electronics Based on GaN and Ga2O3 Bulk
Substrates
Performance projections of vertical natural polarization
superjunction (PSJ) devices in AlGaAs/GaAs andAlGaN/GaN heterostructures
High-Performance Quasi-Vertical GaN Schottky Barrier
Diode on Silicon Substrate with Post-Etch Sidewall High
Temperature Oxidation
Investigation of channel electric field distribution inAlGaN/GaN multi nanochannel high electron mobility
transistors

S. RajanLunch(12:06 - 13:20)

4. GaN MOS/MIS and
Related Technologies(13:20 - 14:37)

Coffee brake(14:37 - 15:00)

5. WBG Materials
and Devices 3(15:00 - 15:59)

15:00

5-1Single Crystalline Hexagonal Boron Nitride for Far UV
Emission and Substrate for 2D Opto-Electric Devices

T. Taniguchi

NIMS, Japan

Invited

15:25

5-2

Dislocation reduction in diamond by metal-assisted
termination (MAT) and their improvements in Schottky
barrier diode characteristics

S. Ohmagari

AIST, Japan

Invited

15:50

5-3

Diamond MOSFETs with ALD-Al2O3 Exhibiting RF
Power Density of 3.8 W/mm and Carrier Velocity of 1.0 ×
107 cm/s on Polycrystalline Diamond

H. Kawarada

Waseda Univ., JapanSP

15:53

5-4

Diamond Cascode Application for Diamond p-FET GaN nFET Half-Bridge Complementary Inverter.

T. Bi

Waseda Univ., JapanSP

15:56

5-5

Vertical-Type 2-Dimensional Hole Gas Diamond MOSFETwith IDS: ~10000 A/cm2 and specific RON: 3.2 mΩcm2M. Iwataki

Waseda Univ., Japan

SP

16:20

6-1

Ultra High-Speed InP based HEMTs (tentative)

D-H. Kim

Kyungpook National
Univ., Korea

Invited

16:45

6-2

Photonic Double-Mixing by UTC-PD-Integrated-HEMT forK. Nishimura
Optical to MMW Carrier Frequency Down-Conversion

Tohoku Univ., Japan

SP

16:48

6-3

Fabrication and characterization of rectenna integrated with aGaAsSb/ InGaAs backward diode and a log-spiral antenna
X.Liufor zero bias detection

Tokyo Metropolitan
Univ., JapanSP

16:51

6-4

GaInSb n-Channel HEMTs with High AlInSb Barrier

K. Osawa

Tokyo Univ. of Sci.,
JapanSP

16:54

6-5

Optimum Frequency in a Millimeter-wave Wireless Power
Transfer System for Wearable Terminals Using InGaAs
HEMTs

M. Hanaoka

Tokyo Univ. of Sci.,
JapanSP

16:57

6-6

Evaluation of fabrication method of InGaAs nanosheet

M. Kitamura

Tokyo Tech, JapanSP

17:00

6-7

Calculating charge relaxation time distribution in a transistor
device from noise spectrum

Z. Yatabe

Kumamoto Univ.
JapanSP

17:03

6-8

Device Approaches for Vacuum Nanoelectronics

E. Bellotti

Boston Univ, USASP

Coffee brake(15:59-16:20)

6. RF and High Speed
Device Technologies 1(16:20 - 17:06)

7. Poster Viewing(17:06 - 18:20)

17:06

Aug. 28
Session

8. GaN Device
Technologies(8:30 - 9:31)

Time

No.

Title

Affiliation

Type

8:30

8-1

Progress in buffer-free GaN-on-SiC HEMT heterostructures
J-T. Chenfor RF and power devices.

Speaker

SweGaN, Sweden

Invited

8:55

8-2

Fully passivated InAlN/GaN HEMTs on silicon with
fT/fMAX of 144/141 GHz

K. Nomoto

Cornell Univ. USA

Upgraded

9:10

8-3

Effect of T-gate Geometry on the AlGaN/GaN HEMT
Device for High Frequency Application

C. WangNational Chiao Tung
Univ., Taiwan

SP

9:13

8-4

Performance Projection of W-band GaN IMPATT Diodes
Based on Measured Impact Ionization Characteristics

L. CaoUniv. of Notre Dame,USASP

9:16

8-5

Characteristics of Thin Barrier AlGaN/GaN HFETs with
PECVD SiNx as Passivation Layer

H-S. Kim

Hongik Univ., Korea

SP

9:19

8-6

Effects of Cat-CVD SiNx Dielectric Thickness on
AlGaN/GaN MIS-HFETs

M-J. KangSeoul National Univ.,
Korea

SP

9:22

8-7

Low sheet resistance with enhanced electron mobility in
InAlGaN/GaN high-electron-mobility transistor structures

A. Yamada

Fujitsu Labs., JapanSP

9:25

8-8

Reduction in ohmic contact resistance for AlGaN-channel
HFETs with a quaternary AlGaInN barrier layer

S. Saito

Nagoya Inst. Tech.,JapanSP

9:28

8-9

The substrate off-angle dependence on the Al content of an
AlGaN barrier layer of a GaN-on-GaN HEMT structure

N. FukuharaSciocs Co. Ltd., JapanSP

9:50

9-1

Advanced mm-Wave Power Electronics

Y-K. ChenDARPA, USA

Invited

10:15

9-2

Recent Advancement of GaN HEMT Power Amplifiers for
5G Mobile Wireless System

S. Shinjo

Mitsubishi Electric.
Co., Japan

Invited

10:40

9-3

High-speed graded channel GaN HEMTs for linear
millimeter-wave applications

J-S. Moon

HRL, USA

InvitedCoffee Brake(9:31 - 9:50)

9. RF and High Speed
Device Technologies 2(9:50 - 11:05)

Excursion

11:05

Banquet19:00

Aug. 29
Session

10. THz Devices andEmerging Technologies(8:30 - 9:43)

TimeNo.

Title

8:30

10-1

8:55

Speaker

Affiliation

TypeRecent progress on terahertz sources using resonant tunneling
M. Asadadiodes and applications

Tokyo Tech., Japan

Invited10-2

Wireless injection locking of a free running RTD-based THz
K. Arzi
oscillator

Univ. Duisburg-Essen,
UpgradedGermany

9:10

10-3

Low-Frequency Noise in Modulation Doped GaN Nanowire
H. Ye
MOSFETs

Univ. of Notre Dame,
USA

Upgraded

9:25

10-4

Application of Fermi-level managed barrier diodes to wirelessL. Yi
communications in 300-GHz and 600-GHz bands

Osaka Univ., JapanSP

9:2810-5

Rotating waves in resonant-tunneling-diode oscillator latticefor submillimeter-wave multiphase oscillation

S. Sawai

Kanagawa Inst. ofTech., JapanSP

9:31

10-634 Gbit/s QPSK Wireless Transmission Using Resonant
Tunneling Diode ReceiverT. Yamamoto

Osaka Univ., Japan

SP

9:34

10-7

Theoretical studies on triple-barrier resonant tunneling diodes
and integrated structures towards a realization of terahertz
K.Aikawa
wireless communication as terminal devices of RoF systems

Tokyo Metropolitan
Univ., JapanSP

9:37

10-8Univ. of Toyama,
JapanSP

9:40

10-9Univ. of Toyama,JapanSP

10:05

11-1

GaN wet etching process

F. Horikiri

Sciocs Co. Ltd, JapanInvited

10:30

11-2

GaN-on-Diamond –Achieving Low Thermal ResistanceInterfaces using AlN Interlayers

M. Kuball

Univ. of Bristol, UK

Upgraded

10:45

11-3

Photo-electrochemical etching optimized for high-doped ntype GaN

K. Miwa

Hokkaido Univ., JapanSP

10:48

11-4

Characterization of processing-damage induced on n-GaN
surface utilizing electrochemical methods

K. Takeda

Hokkaido Univ., JapanSP

10:51

11-5

Low damage atomic layer etching of AlGaN using BCl3 andIl-H. Hwang
Cl2 gasSeoul National Univ.,
Korea

SP

10:54

11-6

Interfacial characterization of GaN/diamond heterostructures
prepared by room temperature bonding for high power device J. Liang
applications

Osaka City Univ.,
JapanSP

10:57

11-7

Fabrication of GaAs/Diamond direct bonding for high power
Y. Nakamura
device applications

Osaka City Univ.,
JapanSP

11:00

11-8

High quality ZnO film fabricated by room temperature atomic
K. Yoshidalayer deposition

Yamagata Univ. JapanSP

11:03

11-9

Low-temperature yttria atomic layer deposition on flexible
PET films

K. SaitoYamagata Univ. JapanSP

13:40

13-1

Device Instabilities in GaN/AlGaN HEMTs – the Key Roleof Leakage

M. Uren

Univ of Bristol, UK

Invited

14:05

13-2

Materials defects in power HEMT structures and theirconsequences on the electrical performance of the devices

E. Meissner

Fraunhofer IISB,
Germany

Invited

14:30

13-3

Qualified GaN Transistor Technology for Automotive
Applications (tentative)

P. Parikh

Transphorm Inc., USA

Invited

14:55

13-4

Next Generation GaN Power Devices using GaN Substrates H. Handa

Panasonic Corp., Japan

InvitedSpurious Free Oscillations of the Resonant Tunneling HardType Oscillators Having a Simple Capacitor Coupled Trigger T. ItoInput
Resonant Tunneling Delta-Sigma Modulation UltrasoundK. Maezawa
Sensors Using A Suspended Microstrip Disk Resonator

Coffee Brake(9:43 - 10:05)

11. Novel Process andCharacterization(10:05 - 11:06)

12. Poster Viewing(11:06 - 12:20)

11:06

Lunch
(12:20 - 13:40)

13． GaN Power DeviceTechnologies(13:40 - 15:20)

Closing(15:20 - 15:30)