Oct. 23 (Sun.)

IWGO 2022 Program
Oct. 23 (Sun.)
Registration

15:30-17:30

Welcome Reception

17:30-19:30

Oct. 24 (Mon.)

Oct. 24 (Mon.)
Welcome Opening

8:45-9:00

Plenary 1

9:00-10:00

Chair : M. Higashiwaki (OMU/NICT)

Plenary 1 (Plenary)

9:00 - 10:00

Progress of α -Ga2O3 for actual device applications
Shizuo Fujita,*,1 Kantaro Kaneko,1,2 and Katsuhisa Tanaka1
1Kyoto University, Japan, 2Ritsumeikan University, Japan

Epitaxy 1 (MBE1: Doping)

10:00-12:15

Chair : O. Bierwagen (PDI)

Epi 1-1 (Invited)

10:00 - 10:30

MOCVD growth of Ga2O3 and (AlGa)2O3: thin ﬁlms and heterostructures
Hongping Zhao*,1,2
1Department of Electrical and Computer Engineering, The Ohio State University, United States of America,
2Department of Materials Science and Engineering, The Ohio State University, United States of America
Break
Epi 1-2 (Invited)

10:30 - 10:45
10:45 - 11:15

Single-domain κ -Ga2O3 thin ﬁlms grown on ϵ -GaFeO3 substrates by mist CVD
Hiroyuki Nishinaka,*,1 Osamu Ueda,2 Noriaki Ikenaga,3 Noriyuki Hasuike,1 and Masahiro Yoshimoto1
1Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Japan, 2Meiji Renewable Energy
Laboratory, Meiji University, Japan, 3Kanazawa Institute of Technology, Japan

Epi 1-3 (Oral)

11:15 - 11:30

Impurity scattering and doping control in MBE grown Ga2O3
Jonathan McCandless,*,1 Brad Morell,2 Vladimir Protasenko,1 Grace Xing,1,2,3 and Debdeep Jena1,2,3
1School of Electrical and Computer Engineering, Cornell University, United States of America, 2Departmentof Materials Science and Engineering, Cornell University, United States of America, 3Kavli Institute, Cornell
University, United States of America

Epi 1-4 (Oral)

11:30 - 11:45

Continuous Si doping in (010) and (001) β -Ga2O3 ﬁlms by plasma-assisted molecularbeam epitaxy
Takeki Itoh,* Akhil Mauze, Yuewei Zhang, and James S. Speck
Materials Department, University of California, Santa Barbara, United States of America

Oct. 24 (Mon.)

Epi 1-5 (Oral)

11:45 - 12:00

Towards controllable Si doping in oxide molecular beam epitaxy: the example of β Ga2O3 doped by a solid SiO source
Andrea Ardenghi,*,1 Oliver Bierwagen,1 Andreas Falkenstein,2 Georg Hoﬀmann,1 Jonas Lähnemann,1 Manfred
Martin,2 and Piero Mazzolini3
1Paul-Drude-Institut für Festkörperelektronik, Germany, 2Institute of Physical Chemistry, RWTH Aachen University, Germany, 3Department of Mathematical, Physical and Computer Science, University of Parma, Italy

Epi 1-6 (Oral)

12:00 - 12:15

Doping and diﬀusion of Mg in (010) β -Ga2O3 ﬁlms grown by plasma-assisted molecularbeam epitaxy
Akhil Mauze, Yuewei Zhang, Takeki Itoh, and James S. Speck*Materials Department, University of California, Santa Barbara, United States of America

Lunch

12:15 - 14:00

Device 1

14:00-15:30

Chair : A. Green (AFRL)

Dev 1-1 (Invited)

14:00 - 14:30

Analysis of methods to improve the thermal management of β -gallium oxide transistors
Samuel Graham*,1,2
1Georgia Institute of Technology, United States of America, 2University of Maryland, United States of America

Dev 1-2 (Invited)

14:30 - 15:00

Addressing the thermal challenges of Ga2O3 power devices by packaging
Yuhao Zhang,*,1 Boyan Wang,1 Ming Xiao,1 Yuan Qin,1 Christina DiMarino,1 Guo-Quan Lu,1 Kohei Sasaki,2and Cyril Buttay3
1Center for Power Electronics Systems, Virginia Tech, United States of America, 2Novel Crystal Technology,
Japan, 3University Lyon, CNRS, France

Dev 1-3 (Oral)

15:00 - 15:15

Conduction processes, modeling and deep levels in nitrogen-implanted β -Gallium oxide
Schottky diodes
Carlo De Santi,*,1 Manuel Fregolent,1 Matteo Buﬀolo,1 Masataka Higashiwaki,2,3 Gaudenzio Meneghesso,1 Enrico
Zanoni,1 and Matteo Meneghini1
1Department of Information Engineering, University of Padova, Italy, 2Department of Physics and Electronics, Osaka Metropolitan University, Japan, 3National Institute of Information and Communications Technology,Japan

Dev 1-4 (Oral)

15:15 - 15:30

Quantum transport in Ga2O3 ballistic electron devices
Nazir Hossain and Man Hoi Wong*
ECE Department, University of Massachusetts Lowell, United States of America

Break

15:30 - 15:45

Oct. 24 (Mon.)

Process

15:45-17:15

Chair : H. Okumura (Univ. of Tsukuba)

Proc 1-1 (Invited)

15:45 - 16:15

The anisotropy of ohmic contacts to gallium oxide
Rebecca L. Peterson*,1,2 and Ming-Hsun Lee2
1Department of Electrical Engineering and Computer Science, University of Michigan, United States of America,
2Department of Materials Science and Engineering, University of Michigan, United States of America

Proc 1-2 (Oral)

16:15 - 16:30

P-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding
Zhenwei Wang,*,1 Daiki Takatsuki,2 Jianbo Liang,2 Takahiro Kitada,1,2 Naoteru Shigekawa,2 and Masataka
Higashiwaki1,2
1National Institute of Information and Communications Technology, Japan, 2Department of Physics and Electronics, Osaka Metropolitan University, Japan

Proc 1-3 (Oral)

16:30 - 16:45

High breakdown (001) β -Ga2O3 Schottky barrier diode with high resistance anodetermination formed by oxygen annealing
Qiming He,*,1,2 Xuanze Zhou,2 Weibing Hao,2 Chen Chen,2 Wei Guo,2 Qiuyan Li,2 Qi Liu,2 Guangwei Xu,2Xiaolong Zhao,2 and Shibing Long2
1School of Electronic and Information Engineering, Beihang University, China, 2School of Microelectronics, University of Science and Technology of China, China

Proc 1-4 (Oral)

16:45 - 17:00

Fabrication of high aspect DBR structures for optical integrated devices by hydrogenenvironment anisotropic thermal etching of β -Ga2O3
Yuki Yamazaki,*,1 Tomoaki Monma,1 Takeki Aikawa,1 and Akihiko Kikuchi1,2,3
1Sophia University, Japan, 2Sophia Photonics Research Center, Japan, 3Sophia Semiconductor Research Insti-tute, Japan

Proc 1-5 (Oral)

17:00 - 17:15

Nanocrystalline diamond growth on (010) β -Ga2O3 and β -(AlxGa1-x)2O3 for thermal
management of power electronics
James Spencer Lundh,*,1 Tatyana Feygelson,2 Hannah N. Masten,1 Alan G. Jacobs,2 Boris Feygelson,2 Kohei
Sasaki,3 Akito Kuramata,3 Bradford Pate,2 Karl D. Hobart,2 and Marko J. Tadjer2
1National Research Council Postdoctoral Fellow at U.S. Naval Research Laboratory, United States of America,
2U.S. Naval Research Laboratory, United States of America, 3Novel Crystal Technology, Inc., Japan

break

Poster 1 (Bulk, Epitaxy, Process)

17:15 - 17:30

17:30-19:00

Chair : Y. Oshima (NIMS)

Pos 1-01 (Poster)

17:30 - 19:00

Numerical study of spiral formation of crystal during β -Ga2O3 crystal growth using
Czochralski method
Masaya Iizuka,*,1 Yuji Mukaiyama,1 and Vladimir Artemyev2
1STR Japan K.K., Japan, 2Semiconductor Technology Research d.o.o. Beograd (STR Belgrade), Serbia

Oct. 24 (Mon.)

Pos 1-02 (Poster)

17:30 - 19:00

Polarization dependent optical absorptions in Czochralski-grown Mn doped β -Ga2O3
Benjamin L. Dutton,*,1,2 Jani Jesenovec,1,2 Joel B. Varley,3 Lars F. Voss,3 and John S. McCloy1,2
1Institute of Materials Research, Washington State University, United States of America, 2Materials Science andEngineering Program, Washington State University, United States of America, 3Lawrence Livermore National
Laboratory, United States of America

Pos 1-03 (Poster)

17:30 - 19:00

Source powder preparation for doping control in β -Ga2O3 single crystal grown by EFG
methodTae Wan Je,*,1 Su Bin Park,1 Hui Yeon Jang,1 Su Min Choi,1 Mi Seon Park,1 Yeon-Suk Jang,1 Won Jae Lee,1
Jun Beom Kwon,2 Jung Won Park,2 Jin Ki Kang,3 Yun Ji Shin,4 and Si Yong Bae4
1Department of Advanced Materials Engineering, Doug-Eui University, Republic of Korea, 2Quantamaterials,
Republic of Korea, 3Axel, Republic of Korea, 4Korea Institute of Ceramic Engineering and Technology, Republicof KoreaPos 1-04 (Poster)

17:30 - 19:00

Fabrication of β -Ga2O3 single crystal ribbons with diﬀerent orientation by EFG method
Su-Bin Park,*,1 Tae-Wan je,1 Hui-yeon Jang,1 Su-Min Choi,1 Mi-Seon Park,1 Yeon-Suk Jang,1 Won-Jae Lee,1
Yoon-Gon Moon,2 Jin-Ki Kang,2 Yun-Ji Shin,3 and Si-Young Bae3
1Department of Advanced Materials Engineering, Dong-Eui University, Republic of Korea, 2AXEL, Republic ofKorea, 3Korea Institute of Ceramic Engineering and Technology, Republic of Korea

Pos 1-05 (Poster)

17:30 - 19:00

Growth of β -Ga2O3 single crystals by optimizing temperature gradient of EFG system
Yun-Ji Shin,*,1 Su-Min Lim,1,2 Won-Jae Lee,3 Seong-Min Jeong,1 and Si-Young Bae1
1Semiconductor materials Center, Korea Institute of Ceramic Engineering and Technology, Republic of Korea, 2Department of Smart Green Technology Engineering, Pukyong National University, Republic of Korea,
3Department of Advanced Materials Engineering, Dong-Eui University, Republic of Korea

Pos 1-06 (Poster)

17:30 - 19:00

Growth of β -Ga2O3 layers on a 6-inch wafer using halide vapor-phase epitaxy
Kazuki Naito,*,1 Yudai Shimizu,1 Kohei Sasaki,2 Ken Goto,3 and Yoshinao Kumagai3
1Taiyo Nippon Sanso Corporation, Japan, 2Novel Crystal Technology, Inc., Japan, 3Tokyo University of Agriculture and Technology, Japan

Pos 1-07 (Poster)

17:30 - 19:00

Sub-oxide vapor phase epitaxy for the growth of high-purity gallium oxide
Quang Tu Thieu,* Kohei Sasaki, and Akito Kuramata
Novel Crystal Technology, Inc., Japan

Pos 1-08 (Poster)

17:30 - 19:00

Growth window of α -Ga2O3 on m-plane sapphire for pulsed laser deposition
Clemens Petersen,* Soﬁe Vogt, Max Kneiß, Holger von Wenckstern, and Marius Grundmann
Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany

Pos 1-09 (Poster)

17:30 - 19:00

Ge delta-doped β -Ga2O3 grown via plasma-assisted molecular beam epitaxy
Thaddeus James Asel,*,1 Erich Steinbrunner,1,2 Yunjo Kim,1,3 Adam Neal,1 and Shin Mou1
1Materials and Manufacturing Directorate, Air Force Research Laboratory, United States of America,
2Department of Electrical Engineering, Wright State University, United States of America, 3ARCTOS Technology
Solutions LLC, United States of America

Oct. 24 (Mon.)

Pos 1-10 (Poster)

17:30 - 19:00

Time-of-ﬂight mass spectrometric study of Ga2O3 growth system in a metalorganic
vapor phase epitaxy reactor
Haruka Tozato,*,1 Ken Goto,1 Taro Nishimura,1 Kazutada Ikenaga,1,2 Shogo Sasaki,3 Masato Ishikawa,4 Hideaki
Machida,4 and Yoshinao Kumagai1
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2TAIYO NIPPONSANSO CORPORATION, Japan, 3FLOuRISH Institute, Tokyo University of Agriculture and Technology, Japan,
4Gas-Phase Growth Ltd., Japan

Pos 1-11 (Poster)

17:30 - 19:00

Comparison of metalorganic vapor phase epitaxy of β -Ga2O3 using triethylgallium anddiethylgallium ethoxide
Ken Goto,*,1 Taro Nishimura,1 Haruka Tozato,1 Shogo Sasaki,2 Kazutada Ikenaga,1,3 Masato Ishikawa,4 Hideaki
Machida,4 and Yoshinao Kumagai1
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2FLOuRISH Institute, Tokyo University of Agriculture and Technology, Japan, 3TAIYO NIPPON SANSO CORPORATION,
Japan, 4Gas-Phase Growth Ltd., Japan

Pos 1-12 (Poster)

17:30 - 19:00

Homoepitaxial growth of Ge-doped β -Ga2O3 ﬁlms by mist chemical vapor deposition
Temma Ogawa,*,1 Hiroyuki Nisinaka,2 Kazuki Shimazoe,1 Tatsuji Nagaoka,3 Hiroki Miyake,3 and Masahiro
Yoshimoto2
1Department of Electronics, Kyoto Institute of Technology, Japan, 2Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Japan, 3Power Electronics R & D Div. 2, MIRISE Technologies Corporation,
Japan

Pos 1-13 (Poster)

17:30 - 19:00

Silane-mediated expansion of domains in Si-doped κ-Ga2O3 epitaxy and relevant eﬀect
on the in-plane electronic conduction
Piero Mazzolini,*,1,2 Zsolt Fogarassy,3 Antonella Parisini,1 Francesco Mezzadri,2,4 David Diercks,5 Matteo Bosi,2Luca Seravalli,2 Anna Sacchi,1 Giulia Spaggiari,1,2 Danilo Bersani,1 Oliver Bierwagen,6 Benjamin Moritz Janzen,7Marcella N. Marggraf,7 Markus R. Wagner,7 Ildiko Cora,3 Bèla Pècz ,3 Abbes Tahraoui,6 Alessio Bosio,1 Carmine
Borelli,1 Stefano Leone,8 and Roberto Fornari1,2
1Department of Mathematical, Physical and Computer Sciences, University of Parma, Italy, 2IMEM-CNR, Italy,
3Centre for Energy Research, Hungarian Academy of Sciences, Institute for Technical Physics and Materials Science, Hungary, 4Department of Chemistry, Life Sciences and Environmental Sustainability, Universityof Parma, Italy, 5Shared Instrumentation Facility, Colorado School of Mines Golden, United States of America, 6Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany,
7Technische Universität Berlin, Institute of Solid State Physics, Germany, 8Fraunhofer IAF, Fraunhofer Institutefor Applied Solid State Physics, Germany

Pos 1-14 (Poster)

17:30 - 19:00

Strain engineering of β -Ga2O3: Pulsed-laser deposition on (100) θ -Al2O3 templates andimpacts of compressive strain on physical properties
Kazuki Koreishi,*,1 Takuto Soma,1 Motohisa Kado,2 and Akira Ohtomo1
1Department of Chemical Science and Engineering, Tokyo Institute of Technology, Japan, 2Toyota Motor Corporation, Japan

Pos 1-15 (Poster)

17:30 - 19:00

Thermodynamic analysis of β -Ga2O3 growth using Ga2O and H2O source gases
Rie Togashi,*,1 Akari Suzuki,1 Haruka Ishida,1 Shigeyoshi Usami,2 Masayuki Imanishi,2 Masahiko Hata,3 andYusuke Mori2
1Department of Engineering and Applied Sciences, Sophia University, Japan, 2Graduate School of Engineering,Osaka University, Japan, 3Itochu Plastics Inc., JapanOct. 24 (Mon.)

Pos 1-16 (Poster)

17:30 - 19:00

Demonstration of δ -Ga2O3 epitaxial thin ﬁlms using β -Fe2O3 buﬀer layers by mist CVD
Takahiro Kato,*,1 Hiroyuki Nishinaka,2 Kazuki Shimazoe,1 and Masahiro Yoshimoto2
1Department of Electronics, Kyoto Institute of Technology, Japan, 2Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Japan

Pos 1-17 (Poster)

17:30 - 19:00

Investigation of (001) β -Ga2O3 homoepitaxial ﬁlms grown by MOCVD with assistanceof indium
Wenbo Tang,*,1 Yongjian Ma,1 Tiwei Chen,1 Xiaodong Zhang,1 Xin Zhou,2 and Baoshun Zhang1
1University of Science and Technology of China, China, 2Nanjing University of Science and Technology, China

Pos 1-18 (Poster)

17:30 - 19:00

RF-MBE growth of Mg doped GaN on β -Ga2O3 (2 01) substrates
Tomoya Yamaguchi,*,1 mahiro Hayasaki,1 Tomohiro Yamaguchi,1 Tohru Honda,1 Kohei Sasaki,2 Akito
Kuramata,2 and Takeyoshi Onuma1
1Kogakuin University., Japan, 2Novel Crystal Technology, Inc., Japan
Pos 1-19 (Poster)

17:30 - 19:00

Temperature dependence of homoepitaxial layer growth by MOVPE on (010) β -Ga2O3
substrate
Kazutada Ikenaga,*,1,2 Taro Nishimura,1 Ken Goto,1 Masato Ishikawa,3 Hideaki Machida,3 Tomo Ueno,4 andYoshinao Kumagai1,5
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 2TAIYO NIPPONSANSO CORPORATION, Japan, 3Gas-Phase Growth Ltd., Japan, 4Department of Electrical and Electronic
Engineering, Tokyo University of Agriculture and Technology, Japan, 5Institute of Global Innovation Research,
Tokyo University of Agriculture and Technology, Japan

Pos 1-20 (Poster)

17:30 - 19:00

A new approach to β -Ga2O3 epitaxy
Daniela Gogova,2,3 Dat Q. Tran,2,3 Steﬀen Richter,1,2,3 Valdas Jokubavicius,2,3 Rositsa Yakimova,3 Axel R.
Persson,2,3 Per O.A. Persson,2,3 Olle Kordina,2,3 Bo Monemar,2,3 Mathias Schubert,2,3,4 Plamen P. Paskov,2,3
and Vanya Darakchieva*,1,2,3
1Solid State Physics and NanoLund, Lund University, Sweden, 2Center for III-Nitride Technology C3NiT Janzén, Linköping University, Sweden, 3Department of Physics, Chemistry and Biology, Linköping University,
Sweden, 4Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, United States ofAmericaPos 1-21 (Poster)

17:30 - 19:00

Structural ﬂuctuation in twist direction of α -(AlGa)2O3 thin ﬁlms grown on c- anda-sapphire substrates by mist chemical vapor deposition
Kazuyuki Uno,* Hiroto Tamura, and Marika Ohta
Faculty of Systems Engineering, Wakayama Univ., Japan

Pos 1-22 (Poster)

17:30 - 19:00

Eﬀect of additional HCl on Ga2O3 particle formation in a GaCl-O2-N2 system
Risa Nagano,*,1 Kentaro Ema,2 Kohei Sasaki,2 Akito Kuramata,2 and Hisashi Murakami1
1Tokyo University of Agriculture and Technology, Japan, 2Novel Crystal Technology, Inc., Japan

Pos 1-23 (Poster)

17:30 - 19:00

Inﬂuence of synthesis conditions on growth of α -Ga2O3 ﬁlm in Mist-CVD process
Takeru Wakamastu,*,1 Hitoshi Takane,1 Kentaro Kaneko,1 Tsutomu Araki,2 and Katsuhisa Tanaka1
1Kyoto University, Japan, 2Ritsumeikan University, JapanOct. 24 (Mon.)

Pos 1-24 (Poster)

17:30 - 19:00

Bandgap tuning in β -(InxGa1-x)2O3 by low-temperature oxide-molecular-beam-epitaxy
Zhirun Li,*,1 Jonathan Wagstaﬀ,1 Tien Khee Ng,1 Huafan Zhang,1 Mihai Apreutesei,2 Bambar Davaasuren,1
Nimer Wehbe,1 Wojciech Ogieglo,1 Yue Wang,1 Redha H. Al Ibrahim,1 and Boon S. Ooi1
1King Abdullah University of Science and Technology, Saudi Arabia, 2Riber, France

Pos 1-25 (Poster)

17:30 - 19:00

Growth of Ga2O3 ﬁlm on ScAlMgO4 substrate by mist-CVD
Syuhei Yamashita,*,1 Hitoshi Takane,2 Yuichi Wada,1 Yuto Yamafuji,1 Junjiro Kikawa,1 Makoto Matsukura,3Takahiro Kojima,3 Takashi Shinohe,4 Kentaro Kaneko,2 and Tsutomu Araki1
1Ritsumeikan University, Japan, 2Kyoto University , Japan, 3OXIDE, Japan, 4FLOSFIA, Japan

Pos 1-26 (Poster)

17:30 - 19:00

MBE growth of GaN on (2 01) β -Ga2O3
Alexander Austin Chaney,*,1 Adam Neal,2 Shin Mou,2 and Thaddeus Asel2
1Azimuth Corporation , United States of America, 2Materials and Manufacturing Directorate, AFRL, UnitedStates of America
Pos 1-27 (Poster)

17:30 - 19:00

α-V2O3 hetero-structure on sapphire subGrowth and structural analysis of α -Ga2O3/α
strateKazuaki Akaiwa* and Kunio Ichino
Tottori University, Japan

Pos 1-28 (Poster)

17:30 - 19:00

Elucidation of the epitaxial relation between β -Ga2O3 (2 01) thin ﬁlm and CeO2 (001)substrate for heterogeneous integrations
Xiao Tang* and Xiaohang Li
King Abdullah University of Science and Technology, Saudi Arabia

Pos 1-29 (Poster)

17:30 - 19:00

Insights from independent control of gallium precursor and substrate temperatureduring LPCVD of β -Ga2O3
Gavax Joshi,* Yogesh Singh Chauhan, and Amit Verma
Department of Electrical Engineering, IIT Kanpur, India

Pos 1-30 (Poster)

17:30 - 19:00

The eﬀect of reactant gases on the surface morphologies of as grown surfaces in thehomoepitaxial growth of (001) β -Ga2O3 by halide vapor phase epitaxy
Hae-Yong Lee,* Young Jun Choi, and Hae-Gon Oh
LumiGNtech Co., Ltd., Republic of Korea

Pos 1-31 (Poster)

17:30 - 19:00

Chemical solution deposition of epitaxial (InGa)2O3 and (AlGa)2O3 thin ﬁlms withtunable bandgaps
Xiao Tang* and Xiaohang Li
King Abdullah University of Science and Technology, Saudi Arabia

Pos 1-32 (Poster)

Deposition of β -Ga2O3 thin ﬁlms by pulsed MOCVDTao Zhang,* Yifan Li, Qian Feng, Yachao Zhang, Jincheng Zhang, and Yue Hao
Xidian University, China

17:30 - 19:00

Oct. 24 (Mon.)

Pos 1-33 (Poster)

17:30 - 19:00

Electrical properties of silicon-implanted α -Al2O3
Hironori Okumura,*,1 Riena Jinno,1 Akira Uedono,1 and Masataka Imura2
1University of Tsukuba, Japan, 2NIMS, Japan

Pos 1-34 (Poster)

17:30 - 19:00

Fabrication of metastable polymorphs and polymorph heterostructures by ion beamirradiation of gallium oxide
Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy, Ponniah Vajeeston, Augustinas
Galeckas, and Andrej Kuznetsov*
University of Oslo, NorwayPos 1-35 (Poster)

17:30 - 19:00

Centimeter-scale freestanding Ga2O3 membrane by thermal exfoliation
Yi Lu,* Shibin Krishna, Che-Hao Liao, Xiao Tang, Na Xiao, and Xiaohang Li
Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology, Saudi Arabia

Pos 1-36 (Poster)

17:30 - 19:00

β -Ga2O3(001) band alignment considering the eﬀects of interface
Investigation of SiO2/β
dipole layer formation
Daiki Takeda*,1 and Koji Kita1,2
1Department of Material Engineering, The University of Tokyo, Japan, 2Department of Advanced Materials
Science, Graduate School of Frontier Sciences, The University of Tokyo, Japan

Pos 1-37 (Poster)

17:30 - 19:00

In-situ epitaxial growth of β -Ga2O3 coated semiconductor tape for ﬂexible UV photodetectors
Xiao Tang* and Xiaohang Li
King Abdullah University of Science and Technology, Saudi Arabia

Pos 1-38 (Poster)

17:30 - 19:00

Bandgap-tunable high-crystal-quality β -(AlGa)2O3 template for power devices preparing by Thermal Interdiﬀusion Alloying (TIA) method
Che-Hao Liao,*,1 Xiao Tang,2 Yi Lu,2 Shibin Krishna,2 and Xiaohang Li2
1National Yunlin University of Science and Technology, Taiwan, 2King Abdullah University of Science and Tech-

nology, Saudi Arabia

Pos 1-39 (Poster)

17:30 - 19:00

Thermal stress analysis of β -Ga2O3 via Raman spectroscopy
Tomoyuki Uchida* and Ryuichi Sugie
Toray Research Center Inc., Japan

Pos 1-40 (Poster)Indium oxide metal-semiconductor ﬁeld-eﬀect transistors
Fabian Schoeppach,* Holger von Wenckstern, and Marius Grundmann
Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany

17:30 - 19:00

Oct. 24 (Mon.)

Pos 1-41 (Poster)

17:30 - 19:00

P-type conductivity in MgxNi1-xO ﬁlms deposited on sapphire substrates by RF magnetron sputtering
Mamoru Murayama,*,1 Akito Ishikawa,1 Tomohiro Yamaguchi,1 Tohru Honda,1 Kohei Sasaki,2 Akito Kuramata,2and Takeyoshi Onuma1
1Department of Applied Physics, Kogakuin University, Japan, 2Novel Crystal Technology, Inc., Japan

Pos 1-42 (Poster)

17:30 - 19:00

Self-aligned photolithography using backside exposure through metal patterns on β Ga2O3 substrates
Takayoshi Oshima
National Institute for Material Science, Japan

Pos 1-43 (Poster)

17:30 - 19:00

vdW-bond-assisted exfoliation of Ga2O3 membrane for vertical conﬁguration electronics
Yi Lu,* Shibin Krishna, Che-Hao Liao, Xiao Tang, Alaa Almushaikeh, and Xiaohang Li
Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology, Saudi Arabia

Pos 1-44 (Poster)

17:30 - 19:00

Enhanced performance of amorphous In2O3 thin ﬁlm transistors using hydrogen rapid
thermal annealing
Na Xiao
Department of Electrical and Computer Engineering King Abdullah, University of Science and Technology(KAUST), Saudi Arabia

Pos 1-45 (Poster)

17:30 - 19:00

Taper angle dependence of β -Ga2O3 submicron structures using inductively coupledplasma reactive ion etching
Glen Isaac Maciel García,* Saravanan Yuvaraja, Vishal Khandelwal, Yi Lu, and Xiaohang Li
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King
Abdullah University of Science and Technology (KAUST), Saudi Arabia

Pos 1-46 (Poster)

17:30 - 19:00

Bilayer Al2O3/Ga2O3 stack for scallop-free deep trench isolation
Mritunjay Kumar,*,1 Vishal Khandelwal,1 Saravanan Yuvaraja,1 Yi Lu,1 Biplab Sarkar,2 and Xiaohang Li1
1King Abdullah University of Science and Technology (KAUST), Advanced semiconductor Laboratory, Saudi
Arabia, 2Department of Electronics and Communication Engineering, Indian Institute of Technology, India

Pos 1-47 (Poster)

17:30 - 19:00

Properties of Sn- and Si-doped Ga2O3 thin ﬁlms produced using sol-gel techniques
Kate McKergow Wislang,*,1,2 Rodrigo Martínez Gazoni,2,3 and Martin Allen1,2
1Department of Electrical and Computer Engineering, University of Canterbury, New Zealand, 2The MacDiarmid
Institute for Advanced Materials and Nanotechnology, New Zealand, 3School of Physical and Chemical Sciences,
University of Canterbury, New ZealandPos 1-48 (Poster)

17:30 - 19:00

Sputtered polycrystalline MgZnO/Al reﬂective electrodes for AlGaN based homojunction tunnel junction deep-ultraviolet LEDs
Tatsuhiro Tanaka,*,1 Taichi Matsubara,1 Kengo Nagata,1,2 Maki Kushimoto,1 Yoshio Honda,3 and Hiroshi
Amano3
1Graduate School of Engineering, Nagoya University, Japan, 2Toyoda Gosei Co., Ltd., Japan, 3Institute ofMaterials and Systems for Sustainability, Nagoya University, JapanOct. 24 (Mon.)

Pos 1-49 (Poster)

17:30 - 19:00

Examination of proper impurity doping and annealing conditions for solution processed
Ga2O3 thin ﬁlms
Akihiro Momota, Takuya Shibahara, ChenYiZhan Li, and Naoki Ohtani*
Department of Electronics, Doshisha University, Japan

Pos 1-50 (Poster)

17:30 - 19:00

High responsivity solar-blind based on p-MnO/n-Ga2O3 p-n junction
Iman Roqan,*,1 Norah Alwadai,1,2 Somak Mitra,1 Zohoor Alharbi,1 Fatimah Alreshidi,1 and Hadeel Alamoudi1
1 King Abdullah University of Science and Technology, Saudi Arabia, 2Princess Nourah bint Abdulrahman University, Saudi Arabia

Pos 1-L1 (Poster) - Late News -17:30 - 19:00

Growth of α -In2O3 ﬁlms with diﬀerent concentrations of In2O3 powder used as source
precursor by mist CVD
Akito Taguchi,*,1 Kentaro Kaneko,2 Ken Goto,3 Takeyoshi Onuma,1 Tohru Honda,1 Yoshinao Kumagai,3 Shizuo
Fujita,4 and Tomohiro Yamaguchi1
1Kogakuin University, Japan, 2Ritsumeikan University, Japan, 3Tokyo University of Agriculture and Technology,
Japan, 4Kyoto University, Japan

Pos 1-L2 (Poster) - Late News -17:30 - 19:00

First demonstration of β -Ga2O3 non-volatile ﬂash memory
Vishal Khandelwal,*,1 Manoj Kumar Rajbhar,1 Biplab Sarkar,2 and Xiaohang Li1
1Advanced Semiconductor Laboratory, Electrical, and Computer Engineering Program, CEMSE Division, King
Abdullah University of Science and Technology (KAUST), Saudi Arabia, 2Department of Electronics and Communication Engineering, Indian Institute of Technology, India

Oct. 25 (Tue.)

Oct. 25 (Tue.)
Plenary 2

9:00-10:00

Chair : M. Higashiwaki (OMU/NICT)

Plenary 2 (Plenary)

9:00 - 10:00

Overview of the growth and physical properties of Czochralski-grown bulk β -Ga2O3
single crystals and related compounds
Zbigniew Galazka
Leibniz-Institut für Kristallzüchtung, Germany

Epitaxy 2 (CVD)

10:00-12:15

Chair : H. Nishinaka (KIT)

Epi 2-1 (Invited)

10:00 - 10:30

Preparation of conductive Si-doped α -(AlxGa1-x)2O3 thin ﬁlms using chloro(3cyanopropyl)dimethylsilane via mist CVD
Giang T Dang,1,2 Yuki Tagashira,1 Tatsuya Yasuoka,1 Xiaojiao Liu,1 Li Liu,1 and Toshiyuki Kawaharamura*,1
1School of Systems Engineering, Kochi University of Technology, Japan, 2Institute of Physics, Vietnam Academyof Science and Technology, Viet Nam

break

10:30 - 10:45

Epi 2-2 (Oral)

10:45 - 11:00

Selective-area-grown high-aspect-ratio β -Ga2O3 structures fabricated by HCl-based
halide vapor phase epitaxy
Takayoshi Oshima* and Yuichi Oshima
National Institute for Materials Science, JapanEpi 2-3 (Oral)

11:00 - 11:15

Crystallinity improvement of 100-mm-diameter β -Ga2O3 epitaxial wafer
Chia-Hung Lin,* Kentaro Ema, Satoshi Masuya, Quang Tu Thieu, Ryoichi Sakaguchi, Kohei Sasaki, and Akito
Kuramata
Novel Crystal Technology, Inc., JapanEpi 2-4 (Oral)

11:15 - 11:30

Homo- and hetero-epitaxial growth of β -Ga2O3 layers by solid-source tri-halide vapor
phase epitaxy
Kyohei Nitta,*,1 Kohei Sasaki,2 Akito Kuramata,2 and Hisashi Murakami1
1Tokyo University of Agriculture and Technology, Japan, 2Novel Crystal Technology, Inc., JapanOct. 25 (Tue.)Epi 2-5 (Oral)

11:30 - 11:45

MOCVD epitaxial development of diﬀerently oriented β -(AlxGa1-x)2O3 ﬁlms with fast
growth rates and Al composition up to 63%
A F M Anhar Uddin Bhuiyan,1 Lingyu Meng,1 Hsien-Lien Huang,2 Jith Sarkar,3 Menglin Zhu,2 Baishakhi
Mazumder,3 Jinwoo Hwang,2 and Hongping Zhao*,1,2
1Department of Electrical and Computer Engineering, The Ohio State University, United States of America,
2Department of Materials Science and Engineering, The Ohio State University, United States of America,
3Department of Materials Design and Innovation, University at Buﬀalo, United States of America

Epi 2-6 (Oral)

11:45 - 12:00

Epitaxial Growth of (100) β -Ga2O3 by MOVPE: Experimental and machine learning
approach
Ta-Shun Chou,* Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Jana Rehm, Zbigniew Galazka,
Palvan Seyidov, Klaus Irmscher, Natasha Dropka, Wolfram Miller, Martin Albrecht, Jutta Schwarzkopf, andAndreas Popp
Leibniz-Institut für Kristallzüchtung (IKZ), Germany

Epi 2-7 (Oral)

12:00 - 12:15

Epitaxial growth of β -(AlxGa1-x)2O3 and β -(InxGa1-x)2O3 alloy thin ﬁlms on (010) β Ga2O3 substrates via mist chemical vapor deposition
Masahiro Kaneko,*,1 Hiroyuki Nishinaka,2 Yuki Kajita,1 and Masahiro Yoshimoto2
1Department of Electronics, Kyoto Institute Technology, Japan, 2Faculty of Electrical Engineering and Electronics,
Kyoto Institute Technology, Japan

Lunch

Characterization 1 (Point defects, Electrical Properties)

12:15 - 14:00

14:00-15:30

Chair : H. Peelaers (Univ. of Kansas)

Char 1-1 (Invited)

14:00 - 14:30

Split Ga vacancies in β -Ga2O3 crystals
Filip Tuomisto
Department of Physics, University of Helsinki, FinlandChar 1-2 (Oral)

14:30 - 14:45

Phonons, Isotope Eﬀects, and Point Defects in β - and κ -Ga2O3
Benjamin M. Janzen,*,1 Piero Mazzolini,2,3 Roland Gillen,4 Andreas Falkenstein,5 Vivien F. S. Peltason,1 Hans
Tornatzky,1 Linus P. Grote,1 Daniel Cierpinsky,1 Andrea Ardenghi,2 Manfred Martin,5 Janina Maultzsch,4Roberto Fornari,3 Zbigniew Galazka,6 Oliver Bierwagen,2 and Markus R. Wagner1
1Technische Universität Berlin, Institute of Solid State Physics , Germany, 2Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany, 3Department of Mathematical, Physical and Computer Sciences, University of Parma, Italy, 4Chair of Experimental Physics, Friedrich-AlexanderUniversität Erlangen-Nürnberg, Germany, 5Institute of Physical Chemistry, RWTH Aachen University, Germany,
6Leibniz-Institut für Kristallzüchtung, Germany

Oct. 25 (Tue.)Char 1-3 (Oral)

14:45 - 15:00

Gallium vacancy in β -Ga2O3: An electron paramagnetic resonance and theoreticalstudy
Nguyen Tien Son,1 Quoc Duy Ho,2,3 Ken Goto,*,4 Hiroshi Abe,5 Takeshi Ohshima,5 Bo Monemar,1 and Yoshinao
Kumagai4,6
1Department of Physics, Chemistry and Biology, Linköping University, Sweden, 2Bremen Center for Computational Materials Science, University of Bremen, Germany, 3Faculty of General Sciences, Can Tho Universityof Technology, Viet Nam, 4Department of Applied Chemistry, Tokyo University of Agriculture and Technology,
Japan, 5National Institutes for Quantum Science and Technology, Japan, 6Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Japan

Char 1-4 (Oral)

15:00 - 15:15

Cobalt a promising dopant for producing semi-insulating crystals: Charge state transition levels of cobalt in β -Ga2O3 from experiment and theory
Palvan Seyidov,*,1 Joel Basile Varley,2 Zbigniew Galazka,1 Ta-Shun Chou,1 Andreas Popp,1 Andreas Fiedler,1and Klaus Irmscher1
1Leibniz-Institut für Kristallzüchtung, Germany, 2Lawrence Livermore National Laboratory, United States ofAmerica

Char 1-5 (Oral)

15:15 - 15:30

Dislocation responsible for leakage current in HVPE (001) β -Ga2O3 SBD observed byemission microscopy and synchrotron x-ray topography
Sayleap Sdoeung,*,1 Kohei Sasaki,2 Katsumi Kawasaki,3 Jun Hirabayashi,3 Akito Kuramata,2 and Makoto Kasu1
1Saga University, Japan, 2Novel Crystal Technology, Japan, 3TDK Corporation, Japan

Break

Characterization 2 (Optical and Electrical Properties)

15:30 - 15:45

15:45-17:15

Chair : T. Onuma (Kogakuin Univ.)

Char 2-1 (Invited)

15:45 - 16:15

Electronic Raman scattering in β -Ga2O3
Andreas Fiedler,*,1 Palvan Seyidov,1 Manfred Ramsteiner,2 Zbigniew Galazka,1 and Klaus Irmscher1
1Leibniz-Institut für Kristallzüchtung, Germany, 2Paul-Drude-Institut für Festkörperelektronik, Germany

Char 2-2 (Oral)

16:15 - 16:30

Anisotropy of thermal conductivity, sound velocities, and optical phonon modes in
β -Ga2O3
Markus R. Wagner,*,1 Benjamin M. Janzen,1 Hans Tornatzky,1 Roland Gillen,2 Janina Maultzsch,2 Zbigniew
Galazka,3 Bartlomiej Graczykowski,4 Kai Xu,5 Riccardo Rurali,5 and Juan S. Reparaz5
1Technische Universität Berlin, Institute of Solid State Physics, Germany, 2Chair of Experimental Physics,
FAU Erlangen-Nürnberg, Germany, 3Leibniz Institute for Crystal Growth, Germany, 4Faculty of Physics, Adam
Mickiewicz University, Poland, 5Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Spain

Oct. 25 (Tue.)Char 2-3 (Oral)

16:30 - 16:45

Impact of growth techniques and post-growth annealing on electronic and phononic
properties of κ-Ga2O3
Benjamin M. Janzen,*,1 Vivien F. S. Peltason,1 Nima Hajizadeh,1 Conrad Hartung,1 Marcella N. Marggraf,1Felix Nippert,1 Roland Gillen,2 Janina Maultzsch,2 Piero Mazzolini,3,4 Roberto Fornari,3,4 Matteo Bosi,4 Luca
Seravalli,4 Alexander Karg,5 Martin Eickhoﬀ,5 Max Kneiß,6 Holger von Wenckstern,6 Marius Grundmann,6 Elias
Kluth,7 Martin Feneberg,7 Rüdiger Goldhahn,7 Andrea Ardenghi,8 Oliver Bierwagen,8 and Markus R. Wagner1
1Technische Universität Berlin, Institute of Solid State Physics, Germany, 2Chair of Experimental Physics, FAU
Erlangen-Nürnberg, Germany, 3Department of Mathematical, Physical and Computer Sciences, University ofParma, Italy, 4IMEM-CNR, Italy, 5Institute of Solid State Physics, University of Bremen, Germany, 6Universität
Leipzig, Felix-Bloch-Institut für Festkörperphysik, Germany, 7Otto-von-Guericke-Universität Magdeburg, Institut für Physik, Germany, 8Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund
Berlin e.V., Germany

Char 2-4 (Oral)

16:45 - 17:00

Subthreshold AC conductance of lateral Ga2O3 transistors: Mobility and carrier density in the subthreshold region
Abhishek Mishra,*,1 Michael J. Uren,1 Matthew Smith,1 Masataka Higashiwaki,2,3 and Martin Kuball1
1Center for Device Thermography and Reliability, University of Bristol, United Kingdom, 2National Institute ofInformation and Communications Technology, Japan, 3Department of Physics and Electronics, Osaka Metropolitan University, Japan

Char 2-5 (Oral)

17:00 - 17:15

Large breakdown ﬁeld of Li-doped NiO and demonstration of high-voltage NiO/Ga2O3
diodes
Katsunori Danno,* Motohisa Kado, Toshimasa Hara, Tatsuki Takasugi, Hayate Yamano, Yusuke Umetani, andTetsuya ShojiToyota Motor Corporation, Japan

Break

Poster 2 (Characterization, Theory, Device)

17:15 - 17:30

17:30-19:00

Chair : H. Zhao (OSU)

Pos 2-01 (Poster)

17:30 - 19:00

Extended defects in MOVPE homoepitaxial β -Ga2O3 ﬁlms and eﬀects on luminescence
Jacqueline Cooke,*,1 Praneeth Ranga,1 Jani Jesenovec,5,6 Arkka Bhattacharyya,1 Xueling Cheng,1 Yunshan
Wang,3 John S. McCloy,5,6 Sriram Krishnamoorthy,4 Michael A. Scarpulla,1,2 and Berardi Sensale-Rodriguez1
1Department of Electrical and Computer Engineering, The University of Utah, United States of America,
2Department of Materials Science and Engineering, The University of Utah, United States of America,
3Department of Chemical Engineering, The University of Utah, United States of America, 4Materials Department,
University of California, Santa Barbara, United States of America, 5Institute of Materials Research, Washington State University, United States of America, 6Materials Science & Engineering Program, Washington State
University, United States of America

Pos 2-03 (Poster)

17:30 - 19:00

Inﬂuences of orientation and remote O2 plasma exposure on the interface properties
β -Ga2O3 MOS capacitorsof SiO2/β
Rujun Sun,*,1,2 Arkka Bhattacharyya,1 Muad Saleh,3 Sriram Krishnamoorthy,1 and Michael A. Scarpulla1,4
1Electrical and Computer Engineering, University of Utah, United States of America, 2School of Microelectronics,
Xidian University, China, 3Materials Science and Engineering Program, Washington State University, UnitedStates of America, 4Materials Science and Engineering, University of Utah, United States of America

Oct. 25 (Tue.)Pos 2-04 (Poster)

17:30 - 19:00

Microstructural characterization of β -Ga2O3 crystals by photoluminescence mapping
measurements
Kohei Shoji,*,1 Masahiko Nakanishi,1 Makoto Kasu,2 Tomohiro Yamaguti,1 Tohru Honda,1 Kohei Sasaki,3 Akito
Kuramata,3 and Takeyoshi Onuma1
1Kogakuin University, Japan, 2Saga University, Japan, 3Novel Crystal Technology, Japan

Pos 2-05 (Poster)

17:30 - 19:00

Crystal defects and lattice constants of high-quality β -Ga2O3 edge-deﬁned ﬁlm-fed
grown single crystals studied by synchrotron x-ray topography and high-resolution
x-ray diﬀractions
Muhidul Islam Chaman, Sayleap Sdoeung, and Makoto Kasu*
Department of Electrical and Electronic Engineering, Saga University, Japan

Pos 2-06 (Poster)

17:30 - 19:00

First identiﬁcation by charge space spectroscopy of acceptors levels in Zn: β -Ga2O3
grown by MOCVD.
Georges Bremond,*,1 Corinne Sartel,2 Zeyu Chi,2 Ekaterina Chikoidze,2 Gérard Guillot,1 and Jean-Marie Bluet1
1University of Lyon, INSA Lyon, CNRS, ECL, UCBL, CPE, Institut des Nanotechnologies de Lyon, France,
2Groupe d’Etude de la Matière Condensée (GEMaC), Université Paris-Saclay, UVSQ - CNRS, France

Pos 2-07 (Poster)

17:30 - 19:00

Mechanical properties of β -Ga2O3 crystals
Hirotaka Yamaguchi,*,1 Yukako Kato,1 Takuya Igarashi,2 Yuki Ueda,2 Kimiyoshi Koshi,2 Shinya Watanabe,2Shigenobu Yamakoshi,2 and Akito Kuramata2
1National Institute of Advanced Industrial Science and Technology, Japan, 2Novel Crystal Technology Inc., Japan

Pos 2-08 (Poster)

17:30 - 19:00

TEM characterization of defects in κ -(Ga1-xInx)2O3 thin ﬁlm grown on (001) FZ-grown
ϵ-GaFeO3 substrate by Mist CVD
Osamu Ueda,*,1 Hiroyuki Nishinaka,2 Noriaki Ikenaga,3 Noriyuki Hasuike,2 and Masahiro Yoshimoto2
1Meiji Renewable Energy Laboratory, Meiji University, Japan, 2Faculty of Electrical Engineering and Electronics,
Kyoto Institute of Technology, Japan, 3Department of Electrical and Electronic Engineering, Kanazawa Instituteof Technology, Japan

Pos 2-09 (Poster)

17:30 - 19:00

Three-dimensional feature of nanopipes in EFG-grown (010) β -Ga2O3 crystal characterized by multiphoton-excitation photoluminescence
Tomoka Nishikawa,*,1 Mayuko Tshukakoshi,1 Ken Goto,2 Hisashi Murakami,2 Yoshinao Kumagai,2 Masahiro
Uemukai,1 Tomoyuki Tanikawa,1 and Ryuji Katayama1
1Osaka University, Japan, 2Tokyo University of Agriculture and Technology, Japan

Pos 2-10 (Poster)

17:30 - 19:00

Evidence of hole conductivity in Zn doped β -Ga2O3 thin ﬁlms
Zeyu CHI,*,1 Corinne Sartel,1 Guillaume Bouchez,1 François Jomard,1 Vincent Sallet,1 Gérard Guillot,2 Kamel
Boukheddaden,1 Amador Pérez-Tomás,3 Tamar Tchelidze,4 Yves Dumont,1 and Ekaterine Chikoidze1
1Groupe d’Etude de la Matière Condensée (GEMaC), Université Paris-Saclay, UVSQ - CNRS, France, 2Univ.
Lyon, CNRS, ECL, UCBL, INSA Lyon, CPE, Institut des Nanotechnologies de Lyon (INL-UMR5270), France,
3Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science andTechnology, Spain, 4Faculty of Exact and Natural Science, Department of Physics, Ivane Javakhishvili Tbilisi
State University, Georgia

Oct. 25 (Tue.)Pos 2-11 (Poster)

17:30 - 19:00

Eﬀect of dislocation and impurity on electrical properties of Si-doped α -Ga2O3 on
sapphire substrate
Hitoshi Takane,*,1 Hirokazu Izumi,2 Hajime Hojo,3 Takeru Wakamatsu,1 Katsuhisa Tanaka,1 and Kentaro
Kaneko1
1Kyoto University, Japan, 2Hyogo Prefectural Institute of Technology, Japan, 3Kyushu University, Japan

Pos 2-12 (Poster)

17:30 - 19:00

Anisotropic IR active phonon modes and fundamental direct band-to-band transitionsin α -(AlxGa1-x)2O3 alloys grown by MOCVD
Elias Kluth,*,1 A F M Anhar Uddin Bhuiyan,2 Lingyu Meng,2 Hongping Zhao,2,3 Rüdiger Goldhahn,1 and Martin
Feneberg1
1Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany, 2Department of Electrical and Computer Engineering, The Ohio State University, United States of America, 3Department of Materials Science andEngineering, The Ohio State University, United States of America

Pos 2-13 (Poster)

17:30 - 19:00

Characterization of electrical properties of β -Ga2O3 epilayer using terahertz timedomain ellipsometry
Toshiyuki Iwamoto,*,1,2 Verdad Canila Agulto,2 Shuang Liu,2 Youwei Wang,2 Valynn Katrine Mag-usara,2Takashi Fujii,1 Ken Goto,3 Yoshinao Kumagai,3,4 and Makoto Nakajima2
1Nippo Precistion Co.,Ltd., Japan, 2Institute of Laser Engineering, Osaka University, Japan, 3Department ofApplied Chemistry, Tokyo University of Agriculture and Technology, Japan, 4Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Japan

Pos 2-14 (Poster)

17:30 - 19:00

THz electron paramagnetic resonance ellipsometry - a new high precision tool to identify defects in gallium oxide: the case of iron dopingSteﬀen Richter,*,1,2 Mathias Schubert,2,3 Sean Robert Knight,1,2 Philipp Kühne,2 Alexander Ruder,3 Vallery
Stanishev,2 Megan Stokey,3 Rafal Korlacki,3 Sai Mu,4 Chris Van de Walle,4 Viktor Ivády,2,5 Oscar BulanceaLindwall,2 Igor Abrikosov,2 and Vanya Darakchieva1,2
1Division of Solid State Physics and NanoLund, Lund University, Sweden, 2Linköping University, Sweden,
3University of Nebraska-Lincoln, United States of America, 4University of California Santa Barbara, UnitedStates of America, 5Max Planck Institute for the Physics of Complex Systems, Germany

Pos 2-15 (Poster)

17:30 - 19:00

ZnGa2O4, the power bipolar spinel relative of Ga2O3
Amador Perez-Tomas,*,1 Ekaterine Chikoidze,2 H.R. Horng,3 and Farid Medjdoub4
1Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, and The Barcelona Institute of Scienceand Technology, Spain, 2Groupe d’Etude de la Matière Condensée (GEMaC), Université Paris-Saclay, Universitéde Versailles Saint Quentin en Yvelines, France, 3Institute of Electronics, National Yang Ming Chiao Tung
University, Taiwan, 4IEMN, CNRS, UMR8520, France

Pos 2-16 (Poster)

17:30 - 19:00

Comparison of group-IV donor elements for tailoring electrical properties of α -Ga2O3
grown by pulsed laser deposition
Soﬁe Vogt,1 Max Kneiß,1 Clemens Petersen,*,1 Thorsten Schultz,2 Holger von Wenckstern,1 Norbert Koch,2 andMarius Grundmann1
1Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany, 2Department of Physics, Humboldt
Universität zu Berlin, Germany

Pos 2-17 (Poster)

17:30 - 19:00

Micro-Raman spectroscopy of bending stresses in β -Ga2O3(001) wafer
Issei Maeda,* Sou Isaji, Noriyuki Hasuike, and Toshiyuki Isshiki
Department of Electronic Systems Engineering , Kyoto Institute of Technology University, JapanOct. 25 (Tue.)Pos 2-18 (Poster)

17:30 - 19:00

High quality vertical Bridgman and edge-deﬁned ﬁlm-fed growth β -Ga2O3 bulk crystal
investigated using high-resolution x-ray diﬀraction and synchrotron x-ray topography
Muhidul Islam Chaman,1 Keigo Hoshikawa,2 Sayleap Sdoeung,1 and Makoto Kasu*,1
1Department of Electrical and Electronic Engineering, Saga University, Japan, 2Faculty of Engineering, Shinshu
University, Japan

Pos 2-19 (Poster)

17:30 - 19:00

Electronic and optical properties of monoclinic gallium oxide under strain: the full
pictureMegan Stokey,*,1 Rafal Korlacki,1 Matthew Hilﬁker,1 Teresa Gramer,1 Jenna Knudtson,1 Steﬀen Richter,2,3 Sean
Knight,2 Alexis Papamichail,2 Alyssa Mock,4 Akhil Mauze,5 Yuewei Zhang,5 James Speck,5 Klaus Irmscher,6
Zbigniew Galazka,6 Jani Jesenovec,7 John McCloy,7 Vanya Darakchieva,2,3 and Mathias Schubert1,2
1University of Nebraska–Lincoln, United States of America, 2Linkoping University, Sweden, 3NanoLund and Solid
State Physics, Lund University, Sweden, 4Weber State University, United States of America, 5University of California Santa Barbara, United States of America, 6Leibniz-Institut für Kristallzüchtung, Germany, 7Washington
State University, United States of America

Pos 2-20 (Poster)

17:30 - 19:00

Nitrogen doped p-type β -Ga2O3 for optoelectronic devices
Soroush Abbasi Zargaleh,*,1,2 C. Sartel,1 F. Jomard,1 M. Peres,3 K. Lorenz,3 B. Berini,1 G. Bouchez,1 V. Sallet,1
K. Boukheddaden,1 Y. Dumont,1 and E. Chikoidze1
1Groupe d’Etude de la Matière Condensée (GEMaC), Université Paris-Saclay, UVSQ - CNRS, France, 2Institut
des NanoSciences de Paris , Sorbonne Universités, CNRS-UMR, France, 3University of Lisbon, Portugal

Pos 2-22 (Poster)

17:30 - 19:00

Band alignment of orthorhombic Ga2O3 with GaN and AlN
Shibin Krishna,* Yi Lu, Che-Hao Liao, Vishal Khandelwal, and Xiaohang Li
Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Saudi Arabia

Pos 2-23 (Poster)

17:30 - 19:00

Structural and electrical properties of thick κ -Ga2O3 grown on GaN/sapphire templates
S. I. Stepanov,*,2,3 V. I. Nikolaev,2,3 A. Y. Polyakov,1 A. I. Pechnikov,2,3 E. B. Yakimov,1,4 M. P. Scheglov,2 I.
V. Shchemerov,1 A. A. Vasilev,1 A. A. Kochkova,1 A. V. Chernykh,1 A. V. Chikiryaka,2 and S. J. Pearton5
1National University of Science and Technology MISiS, Russia, 2Ioﬀe Institute, Russia, 3Perfect Crystals LLC,
Russia, 4Institute of Microelectronics Technology and High Purity Materials, Russia, 5Department of Materials
Science and Engineering, University of Florida, United States of America

Pos 2-24 (Poster)

17:30 - 19:00

The origin of the 3.8 eV luminescence line in α -Ga2O3David R.L Nicol,*,1 Fabien Massabuau,1 and Yuichi Oshima2
1University of Strathclyde, United Kingdom, 2National Institute for Materials Science, Japan

Pos 2-25 (Poster)

17:30 - 19:00

Study of the contact resistance of α -Ga2O3 on m-plane sapphire substrate with respect
to Sn concentrations by CTLM method
Yuuto Yamafuji,*,1 Junjiro Kikawa,1 Syuuhei Yamashita,1 Takashi Shinohe,2 and Tsutomu Araki1
1Graduate School of Science and Engineering, Ritsumeikan University, Japan, 2FLOSFIA, Japan

Pos 2-26 (Poster)

17:30 - 19:00

Highly suppressed interface traps of Al2O3/GaN by interposing a stoichiometric Ga2O3
layer
Chuanju Wang, Yi Lu, Che-Hao Liao, Shibin Chandroth, Saravanan Yuvaraja, and Xiaohang Li*
King Abdullah University of Science and Technology, Saudi Arabia

Oct. 25 (Tue.)Pos 2-28 (Poster)

17:30 - 19:00

Annealing eﬀect on κ -Ga2O3 epitaxial layers and role of hydrogen-related defects
Piero Mazzolini,*,1,2 Maura Pavesi,1 Andreas Falkenstein,3 Antonella Parisini,1 Alessio Bosio,1 Carmine Borelli,1Vivien F. S. Peltason,4 Benjamin Moritz Janzen,4 Markus R. Wagner,4 Matteo Bosi,2 Luca Seravalli,2 Andrea
Ardenghi,5 Oliver Bierwagen,5 Francesco Mezzadri,2,6 Manfred Martin,3 Andrea Baraldi,1 and Roberto Fornari1,2
1Department of Mathematical, Physical and Computer Sciences, University of Parma, Italy, 2IMEM-CNR,
Parma, Italy, 3Institute of Physical Chemistry, RWTH Aachen University, Germany, 4Technische Universität
Berlin, Institute of Solid State Physics, Germany, 5Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut
im Forschungsverbund Berlin e.V., Germany, 6Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Italy

Pos 2-29 (Poster)

17:30 - 19:00

Impact of RF power on electrical property of NiO ﬁlms grown by RF magnetron
spattering
Akito Ishikawa,*,1 Mamoru Murayama,1 Tomohiro Yamaguchi,1 Tohru Honda,1 Kouhei Sasaki,2 Akito
Kuramata,2 and Takeyoshi Onuma1
1Department of Applied Physics, School of Advanced Engineering and Department of Electrical Engineering andElectronics, Graduate School of Engineering, Kogakuin University, Japan, 2Novel Crystal Technology, Inc., Japan

Pos 2-30 (Poster)

17:30 - 19:00

Li-diﬀusion eﬀect in Ga2O3 thin ﬁlms
Anna Sacchi,*,1 Piero Mazzolini,1,2 Giacomo Magnani,3 Michele Sidoli,3 Daniele Pontiroli,3 Mauro Riccò,3 Alessio
Bosio,1 Francesco Mezzadri,2,3 Maura Pavesi,1 Giulia Spaggiari,1,2 Danilo Bersani,1 Andrea Ardenghi,4 Oliver
Bierwagen,4 Matteo Bosi,2 Luca Seravalli,2 Antonella Parisini,1 Benjamin Moritz Janzen,5 Markus R. Wagner,5Andreas Falkenstein,6 Manfred Martin,6 and Roberto Fornari1,2
1Department of Mathematical, Physical and Computer Sciences, University of Parma, Italy, 2IMEM-CNR,
Italy, 3Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma, Italy,
4Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Germany,
5Technische Universität Berlin, Institute of Solid State Physics, Germany, 6Institute of Physical Chemistry,
RWTH Aachen University, Germany
Pos 2-33 (Poster)

17:30 - 19:00

Structural change of Ga2O3 induced by charged oxygen vacancies: a ﬁrst-principles
study
Toru Akiyama,* Takahiro Kawamura, and Tomonori Ito
Mie University, Japan

Pos 2-34 (Poster)

17:30 - 19:00

Electrothermal simulation of vertical &beta-Ga2O3 MOSFETs under switched bias conditions
Junsung Park1 and Sung-Min Hong*,2
1SK hynix, Republic of Korea, 2Gwangju Institute of Science and Technology, Republic of Korea

Pos 2-35 (Poster)

17:30 - 19:00

Inﬂuence of biaxial strain on bandgaps of β -Ga2O3
Takahiro Kawamura* and Toru Akiyama
Graduate School of Engineering, Mie University, Japan

Pos 2-36 (Poster)

17:30 - 19:00

Simulation of β -Ga2O3 lateral ﬁeld eﬀect rectiﬁer with low turn-on voltage and low
leakage current
Qi Liu,* Xuanze Zhou, Guangwei Xu, and Shibing Long
School of Microelectronics, University of Science and Technology of China, China

Oct. 25 (Tue.)Pos 2-37 (Poster)

17:30 - 19:00

Demonstration of hybrid half-wave Cockcroft-Walton voltage multiplier utilizing highperformance β -Ga2O3 junction barrier Schottky diodes
Feihong Wu,*,1 Yuangang Wang,2 Guangwei Xu,1 Yuanjie Lv,2 and Shibing Long1
1School of Microelectronics, USTC, China, 2National Key Laboratory of ASIC, Hebei Semiconductor ResearchInstitute, China

Pos 2-38 (Poster)

17:30 - 19:00

Inkjet-printed Ga2O3 ﬁlms for ﬂexible and heat-resistant deep ultraviolet photodetector
Mengfan Ding,*,1 Kun Liang,2 Xiaolong Zhao,1 Bowen Zhu,2 and Shibing Long1
1School of Microelectronics, University of Science and Technology of China, China, 2Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, China
Pos 2-39 (Poster)

17:30 - 19:00

β -Ga2O3 UMOSFET with vertical quasi-inversion-mode channel
Xuanze Zhou,* Qi Liu, Gungwei Xu, and Shibing Long
University of Science and Technology of China, China

Pos 2-40 (Poster)

17:30 - 19:00

β -Ga2O3 heterojunction
Fabrication and characterization of high-voltage p-CuxNi1-xO/β
diodesChao Liao,* Xing Lu, Pai Wen Fang, Tong Ling Xu, Hao Xun Luo, Yu Xin Deng, and Yan Li Pei
School of Electronics and Information Technology, Sun Yat-sen University, China

Pos 2-41 (Poster)

17:30 - 19:00

Breaking the responsivity-speed dilemma of photodetectors by alternating carrier injection
Zhongfang Zhang,* Xiaolong Zhao, Pengju Tan, Xiaohu Hou, Mengfan Ding, Shunjie Yu, Guangwei Xu, andShibing Long
School of Microelectronics, University of Science and Technology of China, China

Pos 2-42 (Poster)

17:30 - 19:00

Demonstration of ultrawide bandgap oxide ambipolar transistors for CMOS logic
Saravanan Yuvaraja,* Shibin Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Dhanu Chettri, Xiao Tang, Glen
Isaac Maciel García, Che-Hao Liao, and Xiaohang Li
King Abdullah University of Science and Technology, Saudi Arabia

Pos 2-43 (Poster)

17:30 - 19:00

Ga2O3 NMOS inverter integrated circuit based on monolithic integration of depletionand enhancement mode Ga2O3 thin ﬁlm transistor
Vishal Khandelwal,* Saravanan Yuvaraja, Glen Isaac Maciel García, Shibin Krishna, and Xiaohang Li
Advanced Semiconductor Laboratory, Electrical, and Computer Engineering Program, CEMSE division, King
Abdullah University of Science and Technology (KAUST), Saudi Arabia

Pos 2-44 (Poster)

17:30 - 19:00

Radiation response and reliability studies of β -Ga2O3-based devices
N. Manikanthababu*,1 and Rajendra Singh1,2
1Department of Physics, Indian Institute of Technology Delhi, India, 2Department of Electrical Engineering,
Indian Institute of Technology Delhi, India

Oct. 25 (Tue.)Pos 2-45 (Poster)

17:30 - 19:00

In-situ growth of {2 01} ﬁber-textured β -Ga2O3 semiconductor tape for ﬂexible thinﬁlm transistor
Xiao Tang* and Xiaohang Li
King Abdullah University of Science and Technology, Saudi Arabia

Pos 2-46 (Poster)

17:30 - 19:00

High-performance harsh-environment-resistant GaOX solar-blind photodetectors
Xiaohu Hou,* Xiaolong Zhao, Zhongfang Zhang, Mengfan Ding, Shunjie Yu, Guangwei Xu, and Shibing Long
University of Science and Technology of China, China

Pos 2-47 (Poster)

17:30 - 19:00

β -Ga2O3 broadband PIN photodiode
Demonstration of self-powered NiOx/βJose Manuel Taboada Vasquez,*,1 Yi Lu,1 Mritunjay Kumar,1 Vishal Khandelwal,1 Biplab Sarkar,2 and Xiaohang
Li1
1, Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi
Arabia, 2Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee,
India
Pos 2-48 (Poster)

17:30 - 19:00

High-photoresponsivity self-powered β -Ga2O3/p-GaN heterojunction UV photodetectors with In Situ GaON layer by MOCVD
Yongjian Ma,*,1 Tiwei Chen,1 Xiaodong Zhang,1 Wenbo Tang,1 Houqiang Fu,2 and Baoshun Zhang1
1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, China, 2Department ofElectrical and Computer Engineering, Iowa State University, United States of America

Pos 2-49 (Poster)

17:30 - 19:00

Study of Ti and Ni contacts to corundum α -Ga2O3
Fabien Massabuau,*,1 David Nicol,1 Francesca Adams,2 John Jarman,2 Martin Frentrup,2 Thomas O’Hanlon,3Joseph Roberts,4 Andras Kovacs,5 Paul Chalker,4 and Rachel Oliver2
1Department of Physics, University of Strathclyde, United Kingdom, 2Department of Materials Science and Metallurgy, University of Cambridge, United Kingdom, 3Plymouth Electron Microscopy Centre, University of Plymouth, United Kingdom, 4School of Engineering, University of Liverpool, United Kingdom, 5Ernst Ruska-Centre,
Forschungszentrum Jülich, Germany
Pos 2-50 (Poster)

17:30 - 19:00

Realization of highly rectifying Schottky barrier diodes and pn-heterojunctions on κ Ga2O3
Max Kneiss, Fabian Schoeppach,* Daniel Splith, Peter Schlupp, Anna Hassa, Holger von Wenckstern, Michael
Lorenz, and Marius Grundmann
Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany

Pos 2-51 (Poster)

17:30 - 19:00

Enhancement-mode β -Ga2O3 thin-ﬁlm transistor epitaxially grown on heterogeneous
sapphire substrate
Vishal Khandelwal,* Saravanan Yuvaraja, Glen Isaac Maciel García, Yi Lu, and Xiaohang Li
Advanced Semiconductor Laboratory, Electrical, and Computer Engineering Program, CEMSE division, King
Abdullah University of Science and Technology (KAUST), Saudi Arabia

Pos 2-52 (Poster)

17:30 - 19:00

Multi-channel bottom gate In2O3 transistor using high k dielectrics
Dhanu Chettri,* Saravanan Yuvaraja, Na Xiao, and Xiaohang Li
Advanced Semiconductor Laboratory, Electrical, and Computer Engineering Program, CEMSE Division, King
Abdullah University of Science and Technology (KAUST), Saudi Arabia

Oct. 25 (Tue.)Pos 2-L1 (Poster) - Late News -17:30 - 19:00

Growth & characterization of high temperature in-situ Al2O3/(010) β -Ga2O3 interface
Saurav Roy,* Arkka Bhattacharyya, Carl Peterson, and Sriram Krishnamoorthy
Materials Department, University of California Santa Barbara, United States of America

Pos 2-L2 (Poster) - Late News -17:30 - 19:00

Identifying Ga2O3 polymorphs by electron backscatter diﬀraction
Martin S. Williams,1 Isa Hatipoglu,2 Partha Mukhopadhyay,2 Winston V. Schoenfeld,2,3 Shanthi
Subashchandran,4 Krishnamurthy Daivasigamani,5 Kohei Sasaki,5 Akito Kuramata,5 Robert W. Martin,1 andNaresh Kumar Gunasekar*,1,6
1Department of Physics, SUPA, University of Strathclyde, United Kingdom, 2The College of Optics and Photonics, University of Central Florida, United States of America, 3Department of Electrical and Computer Engineering, University of Central Florida, United States of America, 4Crystal growth centre, Anna University, India,
5Novel Crystal Technology, Japan, 6School of Physics and Astronomy, Cardiﬀ University, United Kingdom

Pos 2-L3 (Poster) - Late News -17:30 - 19:00

Demonstration of MOCVD Si-doped β -(AlxGa1-x)2O3 recessed-gate MESFET
Hannah Masten,*,1 James Spencer Lundh,1 Joseph Spencer,2,3 Fikadu Alema,4 Andrei Osinsky,4 Alan Jacobs,2Karl Hobart,2 and Marko Tadjer2
1National Research Council Postdoctoral Fellow at US Naval Research Laboratory, United States of America,
2US Naval Research Laboratory, United States of America, 3Virginia Tech, United States of America, 4AgnitronTechnology, Inc, United States of America

Oct. 26 (Wed.)

Oct. 26 (Wed.)
Theory9:00-10:30

Chair : K. Uno (Wakayama Univ.)

Theo 1-1 (Invited)

9:00 - 9:30

First-principles modeling of the properties of Ga2O3
Hartwin Peelaers
Department of Physics and Astronomy, University of Kansas, United States of America

Theo 1-2 (Invited)

9:30 - 10:00

Understanding point defects and impurities in Ga2O3 and (Al,Ga)2O3 through atomistic
simulations
Joel Basile Varley
Lawrence Livermore National Laboratory, United States of America

Theo 1-3 (Oral)

10:00 - 10:15

Electrothermal spice model for β -Ga2O3 Schottky barrier diodes
Florian Wilhelmi,*,1,2 Silas Heydt,2 Yuki Uchida,3 Shinya Yamaguchi,3 Shinji Kunori,3 Yuji Komatsu,4 andAndreas Lindemann1
1Institute of Electric Power Systems, Magdeburg University, Germany, 2Corporate Research and Development, ZF
Friedrichshafen AG, Germany, 3Research and Development, Novel Crystal Technology, Inc., Japan, 4Corporate
Research and Development, ZF Japan Co., Ltd., Japan
Theo 1-4 (Oral)

10:15 - 10:30

Thermodynamic analysis of group-III sesquioxide growth by molecular beam epitaxy
Rie Togashi,*,1 Haruka Ishida,1 Ken Goto,2 Masataka Higashiwaki,3,4 and Yoshinao Kumagai2
1Department of Engineering and Applied Sciences, Sophia University, Japan, 2 Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Japan, 3Department of Physics and Electronics, Osaka
Metropolitan University, Japan, 4National Institute of Information and Communications Technology, Japanbreak

10:30 - 10:45

Characterization 3 (Structural Properties)

10:45-12:15

Chair : M. J. Tadjer (NRL)Char 3-1 (Invited)

10:45 - 11:15

Building connections between atom positions to materials structure-chemistry: A pathway to design and development of ultrawide bandgap semiconductors
Baishakhi Mazumder
Department of Materials Design and Innovation, University at Buﬀalo, United States of America

Oct. 26 (Wed.)

Char 3-2 (Oral)

11:15 - 11:30

Dislocation analysis for large-area thick EFG β -Ga2O3 substrates using Borrmann eﬀect
synchrotron x-ray topography
Yongzhao Yao,*,1 Yoshiyuki Tsusaka,2 Keiichi Hirano,3 Kohei Sasaki,4 Akito Kuramata,4 Yoshihiro Sugawara,1and Yukari Ishikawa1
1Japan Fine Ceramics Center (JFCC), Japan, 2University of Hyogo, Japan, 3High Energy Accelerator Research
Organization (KEK), Japan, 4Novel Crystal Technology, Inc., Japan

Char 3-3 (Oral)

11:30 - 11:45

Experimental determination of critical thickness limitations of (100) and (010) β (AlxGa1-x)2O3 heteroepitaxial ﬁlms
James Spencer Lundh,*,1 Kohei Sasaki,2 Keita Konishi,2 Hannah N. Masten,1 Jennifer K. Hite,3 Nadeem A.
Mahadik,3 Mark Goorsky,4 Akito Kuramata,2 Karl D. Hobart,3 and Marko J. Tadjer3
1National Research Council Postdoctoral Fellow at U.S. Naval Research Laboratory, United States of America,
2Novel Crystal Technology, Inc., Japan, 3U.S. Naval Research Laboratory, United States of America, 4Materials
Science and Engineering, University of California Los Angeles, United States of America

Char 3-4 (Oral)

11:45 - 12:00

Characterization of homoepitaxial CIS-MOCVD β -Ga2O3 as a function of ﬁlm thickness
and substrate orientation
Marko Tadjer,*,1 Fikadu Alema,2 James Culbertson,1 Alan Jacobs,1 James Spencer Lundh,3 Hannah Masten,3Jennifer Hite,1 Michael Mastro,1 Andrei Osinsky,2 and Karl Hobart1
1U.S. Naval Research Laboratory, United States of America, 2Agnitron Technology Inc., United States of America,
3National Research Council Postdoctoral Fellow, United States of America

Char L-1 (Oral) - Late News -12:00 - 12:15

Operando and ex-situ X-ray topographic observation of dislocations in β -Ga2O3 Schottky barrier diodes and their glide and multiplication under device operation
Yongzhao Yao,*,1 Daiki Wakimoto,2 Hironobu Miyamoto,2 Kohei Sasaki,2 Akito Kuramata,2 Keiichi Hirano,3
Yoshihiro Sugawara,1 and Yukari Ishikawa1
1Japan Fine Ceramics Center, Japan, 2Novel Crystal Technology, Inc, Japan, 3High Energy Accelerator Research
Organization (KEK), Japan

Lunch

12:15 - 14:00

Device 2

14:00-15:30

Chair : D. Jena (Cornell Univ.)

Dev 2-1 (Invited)

14:00 - 14:30

MOCVD-grown Gallium (Aluminum) Oxide thin ﬁlms, heterostructures and in-situ
dielectrics (Invited)
Sriram Krishnamoorthy,*,1 Arkka Bhattacharyya,1 Praneeth Ranga,2 Saurav Roy,1 and Carl Peterson1
1Materials, University of California, Santa Barbara, United States of America, 2ECE, University of Utah, UnitedStates of America

Dev 2-2 (Oral)

14:30 - 14:45

Demonstration of superjunction-like high-k oxide/ β -Ga2O3 lateral schottky barrier
diode with more than 1 GW/cm2 power ﬁgure of merit
Saurav Roy,*,1 Arkka Bhattacharyya,2 Carl Peterson,1 and Sriram Krishnamoorthy1
1Materials Department, University of California Santa Barbara, United States of America, 2Department of Electrical and Computer Engineering, University of Utah, United States of America

Oct. 26 (Wed.)

Dev 2-3 (Oral)

14:45 - 15:00

κ TiO2 interlayer for increased breakdown
Field plated β -Ga2O3 MIS diodes with high-κand reduced leakage current
Nolan Hendricks,*,1,2 Andrew Green,1 Ahmad Islam,1 Kevin Leedy,1 Kyle Liddy,1 Jeremiah Williams,1 Esmat
Farzana,2 James Speck,2 and Kelson Chabak1
1Air Force Research Lab, Sensors Directorate, United States of America, 2Materials Department, UC Santa
Barbara, United States of America

Dev 2-4 (Oral)

15:00 - 15:15

Large-size (4.1 × 4.1 mm2) β -Ga2O3 ﬁeld-plated MOSSBD with a 948 V / 27 A handlingcapability

Fumio Otsuka,* Hironobu Miyamoto, Kohei Sasaki, and Akito Kuramata
Novel Crystal Technology, Inc., JapanDev 2-5 (Oral)

15:15 - 15:30

Application of β -Ga2O3 Schottky barrier diode in DC-DC converter
Jiahong Du,*,1 Wei Guo,1 Guangzhong Jian,2 Weibing Hao,1 Feihong Wu,1 Guangwei Xu,1 Xiaolong Zhao,1 andShibing Long1
1University of Science and Technology of China, China, 2Institute of Microelectronics of Chinese Academy of
Sciences, China

Break

15:30 - 15:45

Bulk

15:45-16:45

Chair : Z. Galazka (IKZ)

Bulk 1-1 (Oral)

15:45 - 16:00

Line-shaped defects in bulk β -Ga2O3 single crystals grown by the vertical Bridgman
techniqueToshinori Taishi,*,1 Naoto Kobayashi,1 Koudai Onozuka,1 Etsuko Ohba,2 and Keigo Hoshikawa1
1Shinshu University, Japan, 2Fujikoshi Machinery Corporation, Japan

Bulk 1-2 (Oral)

16:00 - 16:15

2-inch Fe-doped (010) β -Ga2O3 substrates prepared by vertical Bridgman method
Yuki Ueda,* Takuya Igarashi, Kimiyoshi Koshi, Shigenobu Yamakoshi, and Akito Kuramata
Novel Crystal Technology, Japan

Bulk 1-3 (Oral)

16:15 - 16:30

A new growth technique for β -Ga2O3 single crystals without a precious metal crucible
Isao Takahashi,*,1,2 Vladimir Kochurikhin,1 Taketoshi Tomida,1 Takamasa Sugawara,2 Yasuhiro Shoji,1 Kei
Kamada,1,2 Koichi Kakimoto,2 and Akira Yoshikawa1,2
1C&A Corporation, Japan, 2Tohoku University, Japan
Dev L-1 (Oral) - Late News -16:30 - 16:45

Development & qualiﬁcation of 220nm peak response β -(Al)Ga2O3-MSM photodetectors for space-based observation of the Herzberg continuum
David Rogers,*,1 Philippe Bove,1 Eric Sandana,1 Ferechteh Teherani,1 Luc Damé,2 Lucile Conan,2 Mustapha
Meftah,2 Halma Ghorbel,2 Pierre Gilbert,2 and Pierre Maso2,3
1Nanovation, France, 2LATMOS, IPSL, CNRS, University Versailles Saint-Quentin en Yvelines, France, 3PIT,OVSQ, FranceOct. 26 (Wed.)

Break

16:45 - 18:30

Banquet18:30-21:00

Oct. 27 (Thu.)

Oct. 27 (Thu.)
Plenary 3

9:00-10:00

Chair : M. Higashiwaki (OMU/NICT)

Plenary 3 (Plenary)

9:00 - 10:00

Materials and device engineering for high-performance gallium oxide electronics
Siddharth Rajan*,1,2
1ECE Department, The Ohio State University, United States of America, 2MSE Department, The Ohio State
University, United States of America

Device 3

10:00-12:15

Chair : M. H. Wong (HKUST)

Dev 3-1 (Invited)

10:00 - 10:30

Recent developments in gallium oxide device research at AFRL
A. Green,*,1 K. Liddy,1 D. Dryden,2 A. Islam,1 W. Wang,3 E. Sowers,4 and K. Chabak1
1Air Force Research Laboratory, United States of America, 2KBR, United States of America, 3Wright State
University, United States of America, 4University of Dayton, United States of America

Break
Dev 3-2 (Invited)

10:30 - 10:45
10:45 - 11:15

5.0 kV normally-oﬀ β -Ga2O3 FinFET with 42 µ m-thick drift layer and HfO2 gate insulator
Daiki Wakimoto,* Chia-Hung Lin, Quang Tu Thieu, Hironobu Miyamoto, Kohei Sasaki, and Akito Kuramata
Novel Crystal Technology, Inc., JapanDev 3-3 (Oral)

11:15 - 11:30

Over 0.9 GW/cm2 multi kV-class ﬁn-shape β -Ga2O3 power MESFETs
Arkka Bhattacharyya,*,1 Saurav Roy,2 Praneeth Ranga,1 Carl Peterson,2 and Sriram Krishnamoorthy2
1Department of Electrical and Computer Engineering, University of Utah, United States of America, 2Materials
Department, UCSB, United States of America

Dev 3-4 (Oral)

11:30 - 11:45

Enhancement-mode vertical (100) β -Ga2O3 FinFETs with an average breakdown
strength of 2.7 MV/cm
Kornelius Tetzner,*,1 Michael Klupsch,1 Saud Bin Anooz,2 Ta-Shun Chou,2 Zbigniew Galazka,2 Karina Ickert,1Mathias Matalla,1 Ralph-Stephan Unger,1 Eldad Bahat Treidel,1 Mihaela Wolf,1 Joachim Würﬂ,1 and Oliver
Hilt1
1Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Germany, 2Leibniz-Institut für Kristallzüchtung, Germany

Oct. 27 (Thu.)

Dev L-2 (Oral) - Late News -11:45 - 12:00

Nanocrystalline diamond-capped β -(AlxGa1-x)2O3/Ga2O3 heterostructure ﬁeld-eﬀect
transistor
Hannah Masten,*,1 James Spencer Lundh,1 Joseph Spencer,2,3 Tatyana Feygelson,2 Alan Jacobs,2 Boris
Feygelson,2 Kohei Sasaki,4 Akito Kuramata,4 Pai-Ying Liao,5 Peide Ye,5 Bradford Pate,2 Karl Hobart,2 Travis
Anderson,2 and Marko Tadjer2
1National Research Council Postdoctoral Fellow at US Naval Research Laboratory, United States of America, 2US
Naval Research Laboratory, United States of America, 3Virginia Tech, United States of America, 4Novel Crystal
Technology, Inc., Japan, 5Purdue University, United States of America

Dev L-3 (Oral) - Late News -12:00 - 12:15

Multi-kV class homoepitaxial Ga2O3-on-SiC power MOSFETs with high heat transfer
performance
Arkka Bhattacharyya,*,1 Yiwen Song,2 Anwarul Karim,2 Daniel Shoemaker,2 Hsien-Lien Huang,3 Saurav Roy,1
Craig McGray,4 Jacob H. Leach,5 Jinwoo Hwang,4 Sukwon Choi,2 and Sriram Krishnamoorthy1
1Materials Department, University of California, Santa Barbara, United States of America, 2Department of
Mechanical Engineering, The Penn State University, United States of America, 3Department of Materials Scienceand Engineering, The Ohio State University, United States of America, 4Modern Microsystems, United States ofAmerica, 5Kyma Technologies, Inc., United States of America

Lunch

Epitaxy 3 (MBE2: Structural Properties)

12:15 - 14:00

14:00-15:30

Chair : S. Rajan (OSU)

Epi 3-1 (Oral)

14:00 - 14:15

β -Ga2O3 epitaxial growth on (110) substrate by plasma-assisted molecular beam epitaxy
Takeki Itoh,* Akhil Mauze, Yuewei Zhang, and James S. Speck
Materials Department, University of California, Santa Barbara, United States of America

Epi 3-2 (Oral)

14:15 - 14:30

Phase-selective growth of κ - and β -Ga2O3 by In-mediated metal exchange catalysis inplasma-assisted molecular beam heteroepitaxy
Andrea Ardenghi,*,1 Oliver Bierwagen,1 Jonas Lähnemann,1 Andreas Falkenstein,2 Manfred Martin,2 and Piero
Mazzolini3
1Paul-Drude-Institut für Festkörperelektronik, Germany, 2Institute of Physical Chemistry, RWTH Aachen University, Germany, 3Department of Mathematical, Physical and Computer Science, University of Parma, Italy

Epi 3-3 (Oral)

14:30 - 14:45

Development of defects in (AlxGa1-x)2O3 thin ﬁlms associated with Al solubility limit
observed by atomic force microscopy
Takumi Ohtsuki*,1 and Masataka Higashiwaki1,2
1National Institute of Information and Communications Technology, Japan, 2Department of Physics and Electronics, Osaka Metropolitan University, JapanEpi 3-4 (Oral)

Coherently strained (001) β -(AlxGa1-x)2O3 thin ﬁlms on β -Ga2O3
Akhil Mauze, Takeki Itoh, Yuewei Zhang, Evelyn Deagueros, and James S. Speck*Materials Department, University of California, Santa Barbara, United States of America

14:45 - 15:00

Oct. 27 (Thu.)

Epi 3-5 (Invited)

15:00 - 15:30

MBE growth and properties of ultrawide bandgap oxide layers spanning 5.0 - 9.0 eVenergy gaps
Debdeep Jena,* Jon McCandless, and Riena Jinno
Cornell University, United States of AmericaAward Ceremony and Closing

15:30-16:00