Technical Program of TWHM2017 (tentative)
Invited papers: oral presentation (25 min.)Contributed papers: short oral presentation (4 min.) & Poster

Aug. 29 (Tue.)
SessionTimeNo.

TitleSpeaker

Type

9:15

1-1

Future of III/V Nanowires: Physics orEngineering?

W. Prost

Plen.

10:20

2-1

Two-Dimensional (2D) Layered
Approaches for Materials and Devices

D. Pavlidis

Inv.

10:45

2-2

Carbon nanotube based CMOS andoptoelectronic devices and circuits

Lian Mao Peng

Inv.

11:10

2-3

Reduction of EB resist residues ongraphene surface in terms of resist
adhesion and solubility in developersolution

Xiang Yin

SP

11:15

2-4

Terahertz light emitting graphenechannel transistor operating undercurrent-injection pumping

Kenta Sugawara

SP

11:20

3-1

N-Polar GaN HEMT (tentative)

U. Mishra

Inv.

11:45

3-2

Threshold voltage controllability andstability in InGaN/AlGaN/GaN MOS
HEMTs

D. Gregušová

SP

11:50

3-3

Highly-controllable etching for
AlGaN/GaN recessed-gate structuresutilizing low-damage electrochemical
reactions

Keisuke Uemura

SP

11:55

3-4

Fabrication of GaN-based Depletion
Type n-channel MOSFET Using SiIon-implantation Technique Towards
Monolithic Integrated Circuit

H.Okada

SP12:00

3-5

Correlation between VTH instability
and interface states in
Al2O3/AlGaN/GaN Structures

Shota Kaneki

SP

12:05

3-6

Effects of bias annealing on current
linearity of Al2O3/AlGaN/GaN MOS
HEMTs

Kenya Nishiguchi

SP

3-7

Influence of growth pressure ofcarbon-doped GaN layer in
AlGaN/GaN high-electron-mobility
transistors on Si substrate

Yuya Yamaoka

SPOpening (9:00-9:15)
1. Plenary (9:15-10:00)
Coffee (10:00-10:20)

2. Emerging Devices I

3. GaN Devices I

12:10

Lunch (12:15-13:30)

4. High Power Devices

13:30

4-1

GaN-on-Silicon transistors withextremely low off-state leakage
current up to 3 kilovolts

13:55

4-2

14:20

Farid Medjdoub

Inv.

Recent Progress of Vertical GaN
Power Devices on GaN Substrates

Tohru Oka

Inv.

4-3

Influence of Gate Characteristics
upon UIS Withstanding Capability inHigh Voltage GaN-HEMTs

Wataru Saito

SP

14:25

4-4

Multi-level inverter by GaN HEMT on
semi-insulating substrate

D. Nakajun

SP

14:30

4-5

A investigation of Different Barrier
Layer thickness in AlGaN/GaN
Schottky Barrier Diode(SBD)

Dong-Long Chiang

SP

14:35

5-1

GaN HEMTs on highly-resistive GaN
substrates

Masaaki Kuzuhara

Inv.

15:00

5-2

Extraction of equivalent circuit
parameters for buffer traps in
AlGaN/GaN HEMTs by using low
frequency output admittancemeasurement

Toshiyuki Oishi

SP

15:05

5-3

Direct observation of trapped charges
in Schottky gate AlGaN/GaN HEMT
by electric field induced opticalsecond harmonic generation

T. Katsuno

SP5-4

Temperature dependence of theoptical response due to the deep traplevel in AlGaN/GaN HFET Devices
using Device Simulator

Y. Umezawa

SP

15:15

5-5

TEM study of dielectric films
deposited on the surface of
GaN/AlGaN/GaN MOS
heterostructure

L. Tóth

SP

15:20

5-6

Characterization of GaN epilayers onGaN substrates by a microwave
photoconductivity decay method

Masashi Kato

SP

15:25

5-7

Nondestructive thickness
measurement for GaN homo-epitaxial
layers on GaN substrates using FT-IR

Fumimasa Horikiri

SP

15:30

5-8

Analysis of temperature dependent
frequency dispersion in C-V curves ofAl2O3/AlGaN/GaN structures basedon the disorder-induced gap-state
model

M. MatysSP

15:55

6-1

Semiconductor heterojunctions basedon 2D materials

Yasumitsu Miyata

Inv.

16:20

6-2

Van der Waals Tunneling Devices

Debdeep Jena

Inv.

16:45

6-3

Type II HfS2/MoS2 heterojunction
Tunnel FET

Seiko Netsu

SP

15:10
5. GaN Devices andCharacterization

Coffee (15:35-15:55)

6. Emerging Devices II

7. Poster (16:50-18:00)

16:50

Aug. 30 (Wed.)

8. Wide Bandgap Materials

9:00

8-1

Recent Progress and challenges in
SiC MOSFET for Power Applications

9:25

8-2

RF Performance of Sub-Micron
Ga2O3 FETs

9:50

8-3

Newly evolving wide bandgap devices
Srabanti Chowdhury
for power electronics

Inv.

10:15

8-4

Simulation of improved thermal
performance in Ga2O3 power devices
with an integrated substrate heat sink

M. H. Wong

SP

10:20

8-5

The Effects of Top-Gate Ga-doped
MgZnO Thin-Film Transistors withGd2O3 and ZrO2 High-k Gate
Insulators

How-Ting Wang

SP

10:25

8-6

Epitaxial growth of SnO2 on m-planesapphire substrate by mist chemicalvapor deposition

Z. Yatabe

SP

10:30

8-7

(Al0.2Ga0.8)2O3/ Ga2O3 Modulationdoped Field Effect Transistor(MODFET) with ID,max = 90 mA/mm

SriramKrishnamoorthy

SP8-8

Room temperature direct bonding ofsingle crystal diamond and Si
substrates for the combination ofdiamond devices with Si LSI

Jianbo Liang

SP

11:00

9-1

InP-based Double-Heterojunction
Bipolar Transistors with Au
Subcollector on SiC Substrate
Fabricated by Wafer Bonding
TechnologyYuta Shiratori

Inv.

11:25

9-2

III-V and III-N on CMOS for moreMoore and more-than-Moore

H. Hahn

Inv.

11:50

9-3

Negative Capacitance Transistors

Sayeef Salahuddin

Inv.

12:159-4

Evaluation of Metal/HfO2 high-k Gate
Stack for InGaAs MOS device
Applications

Huy Binh Do

SP

12:20

9-5

GaN-Channel Nanowire MOSFETs
for Low Power Applications

W. LiSP

12:25

9-6

InSb-based HEMTs fabricated byusing two-step-recessed gate
procedure

N. OkaSP

10:35

Tomohide
Terashima

Inv.

Gregg Jessen

Inv.

Coffee (10:40-11:00)

9. Heterogeneous Integrationand More-Moore, More-ThanMoore

Excursion

12:30

Banquet18:00

Aug. 31 (Thu.)
10-1

Concurrent Dual-Band Amplifier
Design Technique for 5G Wireless
Systems

Kazuhiko Honjo

Inv.

9:25

10-2

MIT Virtual Source GaNFET (MVSG)
model: Physics-based industrystandard modelling to facilitate RFand HV-circuit design

Ujwal Radhakrishna

Inv.

9:50

10-3

Challenges in Modeling FET for MMwave MMIC

I. Angelov

SP

9:55

10-4

Cavity-gate Structure for Millimeterwave GaN HEMTs Using MSQ-basedInter-layer Dielectric

Shiro Ozaki

SP

10:00

10-5

A Scalable Large-Signal Distributed
Model for mm-Wave GaN HEMTs

Yutaro Yamaguchi

SP

10:05

10-6

AlGaN/GaN Field-Effect Diode forHigh Frequency Rectification

Yuma ItoSP

10:10

10-7

Self-heating effects in DC and RF
performances of 0.25 μm T-Gate
AlGaN/GaN HEMTs on Silicon andCVD-Diamond

K. Ranjan

SP

10:35

11-2

Ultrafast MSM-HEMT Varactors andtheir Applications on THz Switching

Jae-Hyung Jang

Inv.

11:00

11-3

Bias Stability and Triggering of a
Hard-Type Oscillator Using SeriesConnected Resonant Tunneling
DiodesK. Maezawa

SP

11:05

11-4

External synchronization of travelingpulses developed in a network ofresonant-tunneling diode transmission
lines

K. Narahara

SP

13:10

13-1

n++-GaN selective regrowth byPicoSecond Pulsed Deposition withHSQ mask

Romualdo Ferreyra

Inv.

13:35

13-2

Applications of Epitaxial Transition
Metal Nitride Electronic Materials

David Meyer

Inv.

14:00

13-3

GaN RF FET Ultimate ThermalManagement - GaN-on-DiamondTechnology

M. Kuball

Inv.

14:25

14:30

9:00

10. GaN RF Applications andModeling

Coffee (10:15-10:35)

11. THz Devices

12. Poster (11:10-12:10)

11:10

Lunch (12:10-13:10)

13. GaN Novel Process andReliability

Closing