August 27 (Tue.)

August 16, 2024

Start

Allottedtimetime(min)Opening

9:00

15

1. Keynote

9:15

45

1-1

Technology of AlN-based power transistors

Oliver Hilt

10:00

45

1-2

Spintronics Nonvolatile Memory -A metal/insulator heterostructure -Hideo Ohno

Al-rich AlGaN alloys for RF and power transistors

Andrew Allerman

Session

No.

Title

SpeakerElke Meissner
Michihiko Suhara
Coffee Break

2. GaN/UWBG RF 1
Toshiharu Kubo
David Meyer

11:05

25

2-1

11:30

25

2-2

11:55

3

2-3

11:58

3

2-4

12:01

3

2-5

25

3-1

3. High Frequency
13:55

153-2

14:10

33-3

14:13

3

3-4

14:20

25

4-1

14:45

15

4-2

15:00

34-3

Yasuyuki Miyamoto

AlScN/GaN HEMTs: Towards Higher Power and Bandwidth at Millimeter-Wave
Frequencies
Temperature Dependent S-Parameter Measurement of GaN-Based IMPATT
DiodesInfluence of surface treatment on short channel effect in GaN HEMTs
Low- and High- Field 2DEG Transport Properties in AlGaN/GaN at High
Temperatures

Sebastian Krause

15:03

3

4-4

15:06

34-5

Michael Feiginov

Fraunhofer IAF/Albert-Ludwig
Univ. of Freiburg, Germany

invitedinvitedTokyo Tech., Japansp

Yusuke Wakamoto

Cryogenic InxGa1-xAs/In0.52Al0.48As quantum-well HEMTs for quantum

Univ. of Tokyo/Sumitomo ElectricIndustries, Ltd., Japansp

computing

Kyungpook National Univ., South
Dae-Hyun Kim

34-6

Double δ-doped Al0.40In0.60Sb/Ga0.22In0.78Sb HEMTs with over 450 GHzfmax
InP-based Double Heterojunction Bipolar Transistors with InP/InAlAs
Composite Collector
Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT
structures
3D Rectification Effect in Grating-Gate InGaAs-Channel HEMT for THz
Detection
Resonant-Tunneling-Diode Oscillators with Double Slot-Ring Antennas forHigh-Directive and High-Power Terahertz Radiation

Ryuto Machida

NICT/Tokyo Univ. of Sci., Japan

Takuya Hoshi

NTT Corporation, Japan

Tomoki Jinnai

34-7

15:15

34-8

performance in InGaAs/InAlAs triple-barrier resonant tunneling diodes

Exploring limitations of slot-antenna resonant-tunnelling-diode oscillators

characteristics and quantum transport modelfor InGaAs/InAlAs triple barrier

UTC-PD-Integrated HEMT
microscope employing a resonant tunneling diode (RTD) ‒ Proposal andJapanspsp
invitedShoei Endo

Tokyo Tech., Japanupgrade

Masato Hatori

Michael Feiginov

Naoto Satoby using GaAsSb/ InGaAs backward diodes with integrated bow-tie or log-spiral Hijiri Shimokawatoko
300-GHz-Band Optical-to-Wireless CarrierFrequency Down-Conversion by aTokyo University of Sci./NICT,upgrade

Tohoku Univ., Japan

Shota Horiuchi

A frequency delta-sigma modulation (FDSM) based scanning near-field THz
Umer Farooq

demonstration in microwave frequency range ‒Coffee BreakinvitedAkira Satouantennas
15:12

Korea/Texas Tech. Univ., USA/KAIST, South Korea

Measurements and analysis of zero bias detection rectennas for 300 GHz band

6. Poster Viewing 1

Univ., USAYasuyuki Miyamoto

resonant tunneling diodes
15:09

Samuel Graham

Sandia National Labs./Ohio Statesp

Anovel method of time domain analysis combining theoretical model of I-V

Koh Matsumoto

keynoteUniv. of Notre Dame, USA

integrated with bowtie antennas

5. Power 1

Tohoku Univ., Japan

keynotePatrick Fay

Experimental evaluation of bias-dependent 230-270 GHz oscillation and gain

Safumi Suzuki

Germany

12:05-13:30

13:30

4. THzFerdinand-Braun-Institut gGmbH,Type

10:45-11:05

LunchDae-Hyun Kim

Affiliation

Tokyo Metro. Univ./Tokyo Metro
Col. of Ind. Tech./NICT, Japan
TU Wien, Austria/Le Quy Don Tech.
Univ., Vietnam
Tokyo Metro Col. of Ind. Tech.
/Tokyo Metro. Univ., JapanTokyo Metro. Univ./Tokyo Metro
Col. of Ind. Tech., Japan
Tohoku Univ., Japan
Univ. of Toyama/Hokuriku
Polytechnic Col, Japan

sp

sp

sp

sp

sp

sp

15:20-15:40
Vertical Ga2O3 (010) FinFETs with (100) Sidewalls Treated by Nitrogen Radical

15:40

25

5-1

16:05

25

5-2

Multidimensional Power Devices in GaN and Ga2O3

16:30

155-3Gallium Oxide Electronics ‒ Advanced Device Designs

16:45

35-4

16:48

35-5(withdraw)

5-6

16:51

3

5-7

16:54

35-8

16:57

35-9

17:00

35-10

17:03

35-11

17:10-18:30

Irradiation

Switching losses and their mitigation in lateral Ga2O3 power MOSFETs withhigh-permittivity dielectric passivation
Fast (4.38 ns) dynamic switching operation of NO2-doped p-channel diamond
MOSFETs
Growth and device fabrication of p-channel Al0.6Ga0.4N/AlN HFETs on singlecrystal AlN substrate
Wider Gate Voltage Range of p-GaN/AlGaN/GaN HFET Employing Dual
Dielectric Films for Gate Formation
Effect of Negative Gate Bias on the Off-State Blocking Characteristics of pGaN Gate HEMTTri-gate Normally-Off Power MIS-HEMT with different Fin Configuration andFerroelectric Charge Storage Gate Stack
AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current
blocking layer and δ-doped conductive buffer layer
Heavy Ion Induced SEB Robustness of Wide-bandgap Semiconductor Vertical
Schottky Barrier Diodes

Masataka Higashiwaki
Yuhao Zhang

Osaka Metro. Univ./ NICT/Tokyo
Univ. of Agric. and Tech., Japaninvited

Virginia Tech, USAinvited

Martin KuballUniv. of Bristol, UK

upgradeWenpeng Zhou

HKUST, Hong Kong

sp

(Pre-Recorded Video)

Tomoki Shiratsuchi
Hitoshi Susuki
Min-Gi Jeong

Saga Univ./National Inst. of Tech.,
Kure Col., Japan
Nagoya Inst. of Tech., Japan
Hongik Univ./ChipsK Corp., South
Korea

sp
sp
sp

Jiaojiao SongPeking Univ. Chinasp

Rahul Rai

NYCU, Taiwan/IITKanpur, Indiasp

Toshiharu Kubo

Nagoya Inst. of Tech., Japansp

Zhaowen He

Rensselaer Polytechnic Inst., USAsp

No. 2-3, 2-4, 2-5, 3-3, 3-4, 4-3, 4-4, 4-5, 4-6, 4-7, 4-8, 5-4, 5-5, 5-7, 5-8, 5-9, 5-10, 5-11