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ISSN 2432-0250

Vol.42 No.4
JournalJournal of the Magnetics Society of Japan
Electronic Journal URL: https://www.jstage.jst.go.jp/browse/msjmag

2018

Thin Films, Fine Particles, Multilayers, Superlattices
Fabrication of D022-Mn3Ge Thin Films by Alternate Sputtering Method
発行（公社）日本磁気学会 〠101‒0052 東京都千代田区神田小川町2丁目8番地
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広告◇計測エンジニアリングシステム株式会社

K. Watanabe, H. Makuta, M. Doi, and T. Shima◇東英工業株式会社

…096

42

HP: http://www.magnetics.jp/ e-mail: msj@bj.wakwak.com
Electronic Journal: http://www.jstage.jst.go.jp/browse/msjmag

4

2018

INDEX

Journal of the Magnetics Society of Japan
Vol. 42, No. 4
Electronic Journal URL: https://www.jstage.jst.go.jp/browse/msjmag

CONTENTS
Thin Films, Fine Particles, Multilayers, Superlattices
Fabrication of D022-Mn3Ge Thin Films by Alternate Sputtering Method… ………………………………………………………… K. Watanabe, H. Makuta, M. Doi, and T. Shima

Board of Directors of The Magnetics Society of Japan
President:

K. Takanashi

Vice Presidents:

K. Nakagawa, S. Nakamura

Directors, General Affairs:

Y. Miyamoto, K. Niiduma

Directors, Treasurer:

K. Aoshima, K. Ishiyama

Directors, Planning:

Y. Saito, S. Nakagawa

Directors, Editorial:

K. Kobayashi, T. Ono

Directors, Public Relations:

H. Itoh, S. Greaves

Directors, International Affairs: Y. Takemura, M. Nakano
Auditors:

Y. Suzuki, R. Nakatani

96

INDEX
J. Magn. Soc. Jpn., 42, 96-101 (2018)<Paper>Fabrication of D 0 22 -Mn 3 Ge Thin Films by Alternate Sputtering
MethodK. Watanabe*, H. Makuta**, M. Doi**, and T. Shima***

Department of Applied Physics, Graduate School of Engineering, Tohoku Univ., 6-6-05 Aoba, Aoba-ku, Sendai 980-8579, Japan**

Faculty of Engineering, Graduate School of Tohoku Gakuin Univ., 1-13-1, chuo, Tagajo, Miyagi 985-8567, JapanThe crystal structure and magnetic properties of D022-Mn3Ge thin films with a high perpendicular magnetic
anisotropy constant (Ku) and a low magnetization (Ms) were investigated. D022-Mn3Ge thin films were grown on the
single crystal of MgO (100) substrates with Cr buffer layer using alternate sputtering method. The MnxGe thin films
were prepared as [Mnx/Ge]n multilayers (2.8 ≤ x ≤ 3.7) (1 ≤ n ≤ 30). We tried to fabricate D022-Mn3Ge that shows a highKu value of over 1.0×107 erg/cm3 and a low Ms value of approximately 100 emu/cm3 by the modulation of composition
between Mn layer and Ge layer. As a result, D022-Mn3Ge thin film with a high perpendicular magnetic anisotropy
constant (Ku ~ ca. 1.0×107 erg/cm3), a low saturation magnetization (Ms = 119 emu/cm3) and good squareness from
[Mn3.5/Ge]15 (Ts = 450ºC, Ta = 500ºC) multilayered film was obtained. Almost same magnetic properties were observed
for the films of at n = 20, 25 without post annealing compared with the film annealed at Ta = 500ºC. It is confirmedthat increase of the repetition number n by the alternate sputtering method has a same effect of post annealing at
500ºC.
Keywords: D022-Mn3Ge, perpendicular magnetic anisotropy, coercivity, saturation magnetization, alternate
sputtering method
1. Introduction
The magnetic thin films with a high perpendicularmagnetic anisotropy (PMA) have been intensively
studied in late years. These materials have been
expected for the application of next generation hard discdrive (HDD) or spin transfer torque magnetic random
access memory (STT-MRAM)1). Particularly, for theapplication of the STT-MRAM has much attention fromthe viewpoint of reduction of energy consumption inelectronic devices. STT-MRAM is a non-volatile memory
device including magnetic tunnel junctions (MTJs). The
MTJ for STT-MRAM has been required that a highthermal stability (Δ), a tunnel magnetoresistance (TMR)
ratio, and a low critical switching current (Ic) from theperspective of the ultra-large memory capacity with low
power consumption. In order to realize a giga-bit class
STT-MRAM, the diameter of memory cells must be lessthan 20 nm, the uniaxial magnetic anisotropy constant(Ku) must be larger than 5.0 × 106 erg/cm3 which fulfill
the relation of Δ = KuV / kBT > 602)-4). A high-spin
polarization is also very important issue to achieve ahigh TMR ratio, nearly full spin-polarized magnetic
layers of the MTJs have been required5). Furthermore,in order to realize the STT-MRAM with lower switchingcurrent, it has been required that magnetic materials
having a small Gilbert damping constant (α) and a low
saturation
magnetization(Ms)2)-4).
However,conventional magnetic materials have not fulfilled theseproperties, such as perpendicularly magnetized CoFeB
thin films3),6), [Co/Pt]n and [Co/Pd]n multilayers7)-8),
CoCrPt thin films9), [Co/Ni]n multilayers10) and FePt
thin films11).
In recent years, Mn-based intermetallic compounds	 96

have been attracted much attention such as D022-Mn3Ga,
D022-Mn2Ga, L10-MnGa, L10-MnAl which show thetetragonal crystal structures5),12)-25), because they
demonstrate a high	  Ku, a lower	  Ms, a small	  α. The
Mn-Ga binary alloys have tetragonal crystal structuresof L10 and D022, through 1:1-3:1 content ratio of
manganese and gallium. The L10-MnGa13) shows
ferromagnetism of Ms ~ 600 emu/cm3 14). On the other
hand, D022-Mn3Ga and D022-Mn2Ga are ferrimagnetism
with a low Ms ~ 250-360 emu/cm3 13)-15). Both of L10 and
D022 crystal structures in Mn-Ga binary alloys show ahigh Ku ~ 1.2-2.35 × 107 erg/cm3 14)-15) and a small α ~0.008-0.01515) and a relatively high spin polarization (P~ 58%)16). The L10-MnAl has a high Ku = 1.5 × 107
erg/cm3 17)-18), a low Ms = 550 emu/cm3 19)-20), a small α =0.00619)-20). These Mn-based intermetallic compounds
have been well known as material of high potential for
the STT-MRAM.
In remarkable Mn-based alloys, Mn-Ge binary
alloys have been particularly attracted attention
compared with other Mn-based compounds alloys. The
Mn-Ge binary alloys have tetragonal crystal structure of
D022, in the case of content ratio of manganese andgermanium is approximately 3:1 (D022-Mn3Ge).
According to the recent many studies, D022-Mn3Ge has
been predicted that it possess a high Ku ~ 2.3 × 107
erg/cm3 5), a low Ms ~ 180 emu/cm3 5), a very small α ~0.0009 5), a very high P ~ 100% (Δ1 bands)21). In otherexperimental reports, the D022-Mn3Ge film prepared on
Cr buffered MgO (100) single crystal substrate has ahigh Ku ~ 1.2 × 107 erg/cm3 22)-24), a low Ms ~ 120
emu/cm3 22)-24) has been reported. Therefore, it is thoughtthat D022-Mn3Ge is a very promising magnetic material
for STT-MRAM25).

Journal of the Magnetics Society of Japan Vol.42, No.4, 2018

INDEX

performed by the X-ray diffraction (XRD). The magnetic
properties of [Mnx/Ge]n films were characterized by thesuper-conductivity
quantuminterference
device(SQUID) in the field up to ±70 kOe at room temperature.
3. Results and discussion

Fig. 1 XRD patterns and film structures for[Mn/Ge]15 multilayered films.
(a) MgO sub. / Cr / [Mn/Ge]15 (Ts = 450ºC) / Cr(b) MgO sub. / Cr / [Ge/Mn]15 (Ts = 450ºC) / Cr(c) MgO sub. / [Mn/Ge]15 (Ts = 450ºC) / Cr
In this study, we focused on the preparation
technique of alternate sputtering method, which enables
superior the control of interface and the content
compared with co-sputtering method. In order to achievea high Ku > 1.0 × 107 erg/cm3 and a low Ms < 120
emu/cm3, effect of repetition number (n), dependence ofMn content (x) and post annealing in [Mnx/Ge]nmultilayered films were investigated.
2. Experimental procedure
All of the [Mnx/Ge]n multilayered films were
fabricated on MgO (100) single crystal substrates byalternate sputtering method using an ultra-high vacuum
magnetron sputtering system. The x was estimated fromthickness ratio between Mn layers and Ge layers byusing the density of manganese (α-Mn) 7.88 × 1028
atoms/m3 and germanium 4.42 × 1028 atoms/m3,
respectively. The base pressure was below 8.0 × 10-6
Pa, and the Ar gas pressure was kept at 0.53 Pa during
the deposition. The film structure was MgO (100) sub. /Cr buffer layer (5 nm) / [Mnx/Ge]n multilayer (100 nm) /Cr protection layer (10 nm). After cleaning MgO (100)single crystal substrates by thermal processing in the
sputtering chamber, the Cr buffer layer was deposited atroom temperature on MgO (100) single crystal
substrates. Subsequently, to obtain an atomically flat
surface, the Cr buffer layer was annealed at 700°C. The[Mnx/Ge]n multilayer was fabricated by alternate
sputtering method using a Mn (3N) and a Ge (5N) target
with total film thickness of 100 nm. The substratetemperature (Ts) was kept at 450°C during thedeposition of [Mnx/Ge]n multilayer. Finally, the Cr
protection layer was deposited at room temperature. The
analysis of crystal structure for [Mnx/Ge]n films wereFirst, to investigate crystal growth of the [Mn/Ge]15
multilayered films, three samples which have film
structures of (a) MgO (100) sub. / Cr (5 nm) / [Mn/Ge]15(100 nm) / Cr (10 nm), (b) MgO (100) sub. / Cr (5 nm) /[Ge/Mn]15 (100 nm) / Cr (10 nm), and (c) MgO (100) sub. /[Mn/Ge]15 (100 nm) / Cr (10 nm) were prepared. Fig. 1
shows XRD patterns and film structures of the each
multilayered films. In the sample (a) of the [Mn/Ge]15 on
the Cr buffered MgO (100) substrate, (002) super-latticeand (004) fundamental diffraction peaks fromD022-Mn3Ge were clearly observed. On the other hand,(004) fundamental and (220) diffraction peaks wereobserved, but (002) super-lattice diffraction peak was
not observed in the samples (b) and (c). These results
suggest that both Cr buffer and depositing Mn layer firstare effective for the formation of ordered D022-Mn3Ge
phase. Thus, turn of deposition which Mn layer
deposited firstly was adopted afterward.
Fig. 2 shows XRD patterns of the [Mnx/Ge]15 (Ts =450°C) multilayered films at various x. In the all[Mnx/Ge]15 samples with varied x, D022-Mn3Ge (002)super-lattice and (004) fundamental diffraction peaks
were clearly observed. It is confirmed that in thecondition of x ~ 3.2, intensity of D022-Mn3Ge (002) and(004) diffraction peaks were maximum. In the case of Mn
poor at D022-Mn3Ge diagram phase, it is suggesting thatD022-Mn3Ge phase was formed because of the occupationof Ge atoms in Mn sites for D022-Mn3Ge crystal structure.
Therefore, intensity ratio of D022-Mn3Ge (002) and (004)diffraction peaks was decreased. On the other hand, inthe condition of Mn rich, D022-Mn3Ge phase was formedby Mn atom invaded Ge site. In the sample of x = 3.1([Mn3.1/Ge]15), most well oriented D022-Mn3Ge single
phase structure was obtained. M-H curves of the[Mn/Ge]n multilayer films were shown in Fig. 3. With
increasing x, Ms was decreased. On the other hand, highcoercivity Hc = 23.6 kOe was obtained at x = 2.8,
however, difference between the Ms and remanent
magnetization Mr was very large. These curves indicate
the mixture of relatively soft phase and hard phase.
From the magnetization curves, the [Mn3.1/Ge]15
multilayered film exhibited highest Ms = 140 emu/cm3 inthis study.
Fig. 4 shows relations among x, c/a and Ms for the[MnxGe]15 films. From x = 2.8 to x = 3.1, c/a indicatedapproximately 1.910. At x = 3.1, the c-axis and the a-axis
is estimated to be 7.23 Å and 3.79 Å respectively, and,the Ms showed a value (140 emu/cm3) that was
maximum in this study. And the degree of order S wasestimated approximately 0.7 using a following relation.

Journal of the Magnetics Society of Japan Vol.42, No.4, 2018

97

006

c/a

(c)
(d)

40

50 60 70
2 theta (deg.)

80

90

3

Magnetization (emu/cm )Fig. 2 XRD patterns for [Mnx/Ge]15 (Ts = 450ºC)
multilayered films with varied Mn content (x). The
Mn content (x) for [Mnx/Ge]15 multilayered films are
2.8 (a), 3.1 (b), 3.2 (c), 3.5 (d), 3.7 (e).

120 (a)
60
0
-60
-120
120 (b)
60
0
-60
-120

(d)

Hc =
23.6 kOe(e)

14.6 kOe

23.4 kOe

27.2 kOe-60 -40 -20 0 20 40 60
120 (c)
60
0
-60
-120
13.9 kOe-60 -40 -20 0 20 40 60
Magnetic Þeld (kOe)

Fig. 3 M-H curves for [Mnx/Ge]15 (Ts = 450°C)
multilayered films with varied Mn content (x). The
Mn content (x ) for [Mnx/Ge]15 multilayered films are
2.8 (a), 3.1 (b), 3.2 (c), 3.5 (d), 3.7 (e).

! !!

!!"#! !!"#!
!!"#! !!"#!

!!"#!! !!""!
!!"#!! !!"#!

!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!

In the condition of Mn rich content, c/a showed 1.901
and Ms tended to decrease because the number of Mn
atoms with anti-ferromagnetic coupling became large.
Fig. 5 shows XRD patterns of post annealing effect forthe [Mn3.5/Ge]15 multilayered films. D022-Mn3Ge (002),(006) super-lattice and (004) fundamental diffraction
peaks were observed in both samples. In the post

98

140

3

220

Cr 200

MgO sub. (200)002

Intensity (log. scale)

(a)
(b)

30

160

Balk value (c / a ~ 1.903)

1.915

(e)

20

1.920

D022 - Mn3Ge

Ms (emu/cm )

004

INDEX

120

1.910

100

1.905

80
1.900

2.8

3.0

3.2

3.4

Mn content (x)

3.6

3.8

Fig. 4 c/a and Ms as function of Mn content (x ) for[Mnx/Ge]15 multilayered films.
annealing condition of Ta = 500°C, it is thought that
quality of the crystal become superior, because thediffraction intensity ratios between (002), (006) and(004) were increased.
Fig. 6 shows M-H curves after post annealing for the[Mn3.5/Ge]15 multilayered films. In the case of Ta = 500°C,
Ms = 119 emu/cm3 was observed. The square shape of themagnetization curves was improved by the post
annealing. Steps of the M-H curve in Fig. 6 (a) nearby
zero field were improved by post annealing at 500ºC (Fig.
6 (b)). The value of Ku of the [Mn3.5/Ge]15 multilayeredfilms was estimated from perpendicular and in-planemagnetization curves of Fig. 6, which was estimatedusing the following equation.
!""! !!
!! ! ! !
! !!!!! !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
!

Where Hkeff is anisotropic field estimated byextrapolating the in-plane magnetization curve. In
sample of (b), Ku was estimated to approximately 1"107
erg/cm3.
Finally, the efficacy of the repetition number n wasinvestigated for x = 3.5. Fig. 7 shows XRD patterns of
the [Mn3.5/Ge]n multilayered films with variation of n.
The chemical content ratio of Mn was fixed as 3.5. On
the conditions that n is more than 5, D022-Mn3Ge (002)super-lattice and (004) fundamental diffraction peaks
were observed clearly. Further, it is confirmed thathighly ordered D022-Mn3Ge phase was prepared in the[Mn3.5/Ge]n multilayered films at n = 15-30. In thisexperiment, n was varied within constant total thicknessof the film. In other words, deposition thickness at once
became thinner with increasing n. As a sputtered film
thickness becomes thinner at once, it is thought thatD022-Mn3Ge become easy to crystallize because internal
mixing between Mn and Ge becomes easy. As the results,
with increasing n, D022-Mn3Ge (002) and (004) direction
peaks intensities were increased. M-H curves of[Mn3.5/Ge]n multilayered films were shown in Fig. 8.
From magnetic properties, with increasing n, Ms wasincreased, however Hc was decreased. And Ms = 112

Journal of the Magnetics Society of Japan Vol.42, No.4, 2018

(a)

(b)

Cr 200
220
204

006

D022 - Mn3Ge

004

112
MgO sub. (200)002

Intensity (log. scale)

006

211

Cr 200220

D022 - Mn3Ge

110

004

MgO sub. (200)

110

002

Intensity (log. scale)

INDEX

(a)
(b)
(c)
(d)
(e)
(f)
(g)

20

30

40

50 60 70
2 theta (deg.)8090Fig. 5 XRD patterns for [Mn3.5/Ge]15 multilayeredfilms.
(a) Ts = 450ºC.
(b) Ts = 450ºC, Ta = 500ºC.

120

20

90

3

120 (a)
60
0
-60
-120

Hk ~ 165 (kOe)
3Ku ~ 8.0 (Merg/cm )-1203(b) Ms = 119 (emu/cm )

60

-60

Hk ~ 155 (kOe)
3Ku ~ 10 (Merg/cm )-120

Perpendicular
In plane-60 -40 -20 0
20 40
Magnetic Þeld (kOe)

60

3

-60

Magnetization (emu/cm )3

Magnetization (emu/cm )80(a) Ms = 92 (emu/cm )0040 50 60 70
2 theta (deg.)

Fig. 7 XRD patterns for [Mn3.3/Ge]n (Ts = 450°C)
multilayered films with varied repetition number(n). The repetition number (n) for [Mn3.5/Ge]nmultilayer films are 1 (a), 5 (b), 10 (c), 15 (d), 20 (e),25 (f), 30 (g).

60

120

30

120 (b)
60
0
-60
-120
120 (c)
60
0
-60
-120

(e)

Hc =
38.9 (kOe)(f)

30.5 (kOe)(g)

30.4 (kOe)

15.9 (kOe)

15.9 (kOe)

14.3 (kOe)-60 -40 -20 0 20 40 60
120 (d)
60
0
-60
-120
23.3 (kOe)-60 -40 -20 0 20 40 60
Magnetic Þeld (kOe)

Fig. 6 M-H curves for [Mn3.5/Ge]15 multilayeredfilms.
(a) Ts = 450ºC.
(b) Ts = 450ºC, Ta = 500ºC.

Fig. 8 M-H curves for [Mn3.5/Ge]n (Ts = 450°C)
multilayered films with varied repetition number(n). The repetition number (n) for [Mn 3.5/Ge]nmultilayered films are 1 (a), 5 (b), 10 (c), 15 (d), 20(e), 25 (f), 30 (g).

emu/cm3 was observed on conditions that n is 20 and 25.
It is confirmed that almost same thin film can beobtained without annealing by the increase of repetition
number n. On the other hand, in the case of n is 1; Gelayer was deposited ~ 34 nm after Mn layer was
deposited ~ 66 nm on the Cr buffer layer, a high Hc =38.4 kOe was observed. In the XRD patterns of Fig. 7,
D022-Mn3Ge (002) super-lattice diffraction peakintensity was extremely low, however, (004) and (220)diffraction peaks were clearly observed at n = 1. It isconsidered that disordered D022-Mn3Ge structure exist
mainly at n = 1. Therefore, Ms showed a low value (63emu/cm3). At n = 1, each Mn and Ge sputtered film
thickness were too thick to be crystallized for orderedD022-Mn3Ge.
Fig. 9 shows relations among n, c/a and Ms for the

Journal of the Magnetics Society of Japan Vol.42, No.4, 201899

INDEX

References

120

Balk value (c / a ~ 1.903)

100

1.900

80

1.890

60

c/a

3

1.910

Ms (emu/cm )

1.920

1.880

0

5

10
15
20
Repetition number (n)

25

30

40

Fig. 9 c/a and Ms as function of repetition number(n) for [Mn3.5/Ge]n multilayered films.
[Mn3.5/Ge]n multilayered films. From n = 5 to n = 25, c/a
indicated approximately 1.9. From the XRD profiles (n =5- 25), it is thought that c/a showed same value of bulk
because a (002) super-lattice diffraction peak and a (004)fundamental peak appeared and ordered D022-Mn3Ge
phase exist mainly. On the other hand, with increase n,
Ms tended to increase. At n = 25, c-axis and a-axis
indicated 7.22 Å and 3.80 Å respectively and because ac/a value showed a value (1.903) at the same level as thebulk value, the Ms showed the value (112 emu/cm3) thatwas near to the bulk value. At n = 30, the c-axis
indicated 7.23 Å and the a-axis indicated 3.81 Å. The Ms
was 101 emu/cm3 that was slightly lower than the Ms ofn = 25 (112 emu/cm3). Because the M-H curves in Fig. 6(b) and Fig. 8 (e), (h) are almost same, and the XRD
patterns, the c/a is also almost same to after post
annealing at n = 15, 20, it is confirmed that increase of nby alternate sputtering method has a same effect of post
annealing at 500ºC.
4. Summary
A Cr buffer layer played an important role inepitaxial growth on MgO (100) crystal substrates fromfabrication of a [Mn/Ge]15 multilayer. Highly oriented
D022-Mn3Ge phase was grown on a Cr buffered MgO(100) single substrate by deposition of a Mn layer onto
the Cr buffer layer before deposition of a Ge layer. The
squareness of magnetization curves for D022-Mn3Ge was
improved by post annealing process (Ta = 500ºC).
D022-Mn3Ge that having a high Ku ~ ca. 1.0"107 erg/cm3,
Ms = 119 emu/cm3 and good squareness for [Mn3.5Ge]15(Ts = 450ºC, Ta = 500ºC) multilayer film was obtained byusing alternate sputtering method, with post annealing.
it is confirmed that increase of n by alternate sputtering
method has a same effect of post annealing at 500ºC.
Acknowledgments This study was partly supported
by Collaborative Research Based on Industrial Demand
program from Japan Science and Technology Agency
and a Grant-in Aid for Scientific Research (A).

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Mizukami: J. Appl. Phys., 117, 17B511 (2015).
24) A. Sugihara, K. Suzuki, S. Mizukami, and T.

Miyazaki: J. Phys. D: Appl. Phys., 48 (2015) 164009(5pp).
25) Y. Miura, and M. Shirai: IEEE Trans. Magn., Vol. 50,
1400504 (2014).
Received

May

19,

2016;

Revised

Feb.

15,

2017;

Accepted Mar. 27, 2018

Journal of the Magnetics Society of Japan Vol.42, No.4, 2018

101

INDEX

Editorial Committee Members・Paper Committee Members
K. Kobayashi and T. Ono (Director), T. Kato, K. Koike and T. Taniyama (Secretary)
A. Fujita
H. GotoH. Hashino
S. Honda
S. Inui
S. Kasai
A. Kikitsu
H. Kikuchi
T. Kimura
T. Kubota
T. Nagahama
H. Naganuma
M. Naoe
M. Ohtake
N. PhamT. SatoT. SatoK. Sekiguchi
M. Sekino
T. Shima
M. Sonehara
T. Tanaka
K. Yamamoto
H. Yuasa
N. Adachi
S. Isogami
Y. Kota
T. Narita
K. Tajima
K. Yamazaki

K. Bessho
K. KamataT. MakiD. Oyama
M. Takezawa
S. Yoshimura

M. DoiH. KatoE. Miyashita
J. OzekiT. Takura

T. DoiK. KatoT. Morita
T. Saito
M. Tsunoda

Y. Kanai
K. Miura
T. Sasayama
Y. Shiratsuchi

T. Hasegawa
T. KodaS. Muroga
S. Seino
S. Yabukami

N. Inaba
S. Kokado
H. Nakayama
R. Sugita
T. Yamamoto

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編 集 委 員・論 文 委 員
小林宏一郎（理事） 小 野 輝 男 （理事）加 藤 剛 志 （幹事）小 池 邦 博 （幹事）谷 山 智 康 （幹事）
乾
成里
大竹
充
葛西伸哉
金井
靖
喜々津哲
菊池弘昭
木村
崇
笹山瑛由
佐藤
拓
佐藤
岳
嶋
敏之
白土
優
関口康爾
関野正樹
直江正幸
永沼
博
長浜太郎
橋野早人
PHAM NAMHAI
藤田麻哉
山本健一
湯浅裕美
安達信泰
古門聡士
土井達也
森田
孝

磯上慎二
小田洋平
土井正晶
薮上
信

稲葉信幸
齊藤敏明
中山英俊
山崎慶太

小瀬木淳一
杉田龍二
成田正敬
山本崇史

小山大介
清野智史
長谷川崇
吉村
哲

加藤宏朗
田倉哲也
別所和宏

加藤和夫
竹澤昌晃
槙
智仁

窪田崇秀
曽根原誠
本多周太

後藤博樹
田中哲郎
三浦健司

鎌田清孝
田島克文
宮下英一

神田哲典
角田匡清
室賀
翔

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Journal of the Magnetics Society of Japan
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