STN8205D

Dual N Channel Enhancement Mode MOSFET5.0A
DESCRIPTION
STN8205D is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6G1DG2FEATUREzzzz

STN8205
SYAS1Dz

20V/4.0A, RDS(ON) = 30m-ohm@VGS =4.5V
20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
TSOP-6 package design

S2

S：Subcontractor
Y: Year
A: Week CodeORDERING INFORMATIONPart NumberPackage

Part Marking

STN8205DST6RG

TSOP-6

SYA※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)※ ST8205DST6RG
ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1

STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )SymbolTypicalUnit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

+/-20

V

ID

5.0

A

Parameter

Continuous Drain Current(TJ=150℃)

TA=25℃
TA=70℃

3.4
Pulsed Drain Current

IDM

20A

Continuous Source Current (Diode Conduction)

IS2A

Power Dissipation

PD

1.15W

TA=25℃
TA=70℃

0.75

Operation Junction Temperature

TJ

150℃

Storage Temperature Range

TSTG-55/150℃

Thermal Resistance-Junction to Ambient

RθJA

100℃/W

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1

STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )Parameter

SymbolCondition

Min

TypMax Unit

StaticDrain-Source Breakdown
Voltage
Gate Threshold Voltage

V(BR)DSS

VGS=0V,ID=250uA

20

V
1.2

V

VDS=0V,VGS=+/-20V±100nA

VDS=20V,VGS=0V

1

VDS=20V,VGS=0VTJ=85℃

5VGS(th)VDS=VGS,ID=250uA

Gate Leakage Current

IGSSZero Gate Voltage DrainCurrent

IDSS

On-State Drain Current

ID(on)

VDS≦5V,VGS=4.5V

0.65A

VGS=4.5V,ID=4.0A

0.025 0.030

VGS=2.5V,ID=3.4A

0.037 0.042

Drain-source On-ResistanceRDS(on)Forward Transconductance

gfs

VDS=5V,ID=3.6A

13

Diode Forward Voltage
DynamicTotal Gate Charge

VSD

IS=1.6A,VGS=0V

0.8

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

CissCossCrss

Turn-On TimeTurn-Off TimeQg

Td(on)tr
Td(off)
tfuA

ΩS

1.2

V

10.5
VDS=10V,VGS=4.5V,VDS=2.8A

2.0nC

2.5
VDS=8V,VGS=0V
f=1MHz
VDD=10V, RL=10Ω, ID=4.0A,
VGEN=4.5V, RG=6Ω805
155
122
1854522

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1pFnS

STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A
TYPICAL CHARACTERICTICS

TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1

STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1

STN8205D

Dual N Channel Enhancement Mode MOSFET

5.0A
TSOP-6 PACKAGE OUTLINE

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN8205D 2007. V1