CFexpress COEM Data Specification

401-0546-00 Rev A

COEM CFexpress
Engineering Specification
Document Number: 401-0546-00
Revision: A© 2022 | Delkin Devices Inc.

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CFexpress COEM Data Specification

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Product Overview
Capacities￭ 128GB & 256GB

￭ Support APST

Form Factor￭ Support ASPM

￭ CFEXPRESS

PCIe Interface￭ NVMe PCIe Gen 3 x 2Compliance￭ NVMe 1.3￭ Support L1.2


Performance1￭ Read: up to 1700 MB/s
￭ Write: up to 1100 MB/s

Reliability



￭



Temperature Range3￭ Operation: 0°C ~ 70°C
￭ Storage: -40°C ~ 85°C




RoHS-Compliant
Features Support List:￭ End to end data path protection￭ Thermal throttling

Mean Time Between Failure (MTBF)￭ LDPC + RAID ECCMore than 1.5 million hours￭ SmartRefreshTM￭ Uncorrectable Bit Error Rate (UBER) < 1

sector per 1016 bits read

Advanced Flash Management

Power Consumption2￭ See table 4.2￭ PCI Express Base 3.1
Power Management￭ Drive log￭ Support of TCG OPAL4￭ Support of TCG Pyrite5￭ Static and Dynamic Wear Leveling￭ Bad Block Management￭ TRIM￭ SMART￭ Over-Provisioning￭ Firmware Update Capability
NOTES:
1.

Refer to Chapter 2 Section 1.1 for more details

2.

Refer to Chapter 4, Section 4.2 Power Consumption for more details.

3.

The operation temperature means th e case temperature, in which can be decided via the S.M.A.R.T.

4.

Supported by a separate firmware version. Further information available upon request.

5.

Supported by a separate firmware version. Further information available upon request.

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TABLE OF CONTENTS
1.

INTRODUCTION............................................................................................................... 5
1.1.

General Description ........................................................................................................... 5

1.2.

Product Block Diagram ...................................................................................................... 5

1.3.

Flash Management ............................................................................................................ 5
1.3.1.
1.3.2.
1.3.3.
1.3.4.
1.3.5.
1.3.6.
1.3.7.
1.3.8.

Error Correction Code (ECC) .................................................................................... 5
Wear Leveling ......................................................................................................... 6
Bad Block Management.......................................................................................... 6
TRIM ........................................................................................................................ 6
SMART ..................................................................................................................... 6
Over-Provisioning .................................................................................................... 7
Firmware Upgrade .................................................................................................. 7
Thermal Throttling .................................................................................................. 7

1.4.

GuaranteedFlushTM ............................................................. Error! Bookmark not defined.

1.5.

Advanced Device Security Features ................................................................................... 7
1.5.1. Secure Erase ............................................................................................................ 7
1.5.2. Crypto Erase ............................................................................................................ 7
1.5.3. Physical Presence SID (PSID) ................................................................................... 8

1.6.

SSD Lifetime Management ................................................................................................ 8
1.6.1.
1.6.2.
1.6.3.

1.7.

Terabytes Written (TBW)......................................................................................... 8Media Wear Indicator ............................................................................................. 8
Read Only Mode (End of Life) ................................................................................. 8

Adaptive Approach to Performance Tuning ...................................................................... 9
1.7.1. Throughput ............................................................................................................. 9
1.7.2. Predict & Fetch ........................................................................................................ 9
1.7.3.

SLC Caching ............................................................................................................. 92.

PRODUCT SPECIFICATIONS ............................................................................................ 10

3.

ENVIRONMENTAL SPECIFICATIONS................................................................................ 12
3.1.

Environmental Conditions ............................................................................................... 12
3.1.1. Temperature and Humidity ................................................................................... 12
3.1.2. Shock ..................................................................................................................... 13
3.1.3. Vibration ............................................................................................................... 13
3.1.4. Drop ...................................................................................................................... 13
3.1.5. Bending ................................................................................................................. 13© 2022 | Delkin Devices Inc.

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3.1.6.
3.1.7.
3.1.8.

4.

5.

7.

Torque ................................................................................................................... 13
Electrostatic Discharge (ESD) ................................................................................ 14
EMI Compliance .................................................................................................... 14

3.2.

MTBF ................................................................................................................................ 14

3.3.

Certification & Compliance .............................................................................................. 14

ELECTRICAL SPECIFICATIONS ......................................................................................... 16
4.1.

Supply Voltage ................................................................................................................. 16

4.2.

Power Consumption ........................................................................................................ 16

INTERFACE .................................................................................................................... 18
5.1.

6.

401-0546-00 Rev A

Pin Assignment and Descriptions .................................................................................... 18

SUPPORTED COMMANDS .............................................................................................. 20
6.1.

NVMe Command List ....................................................................................................... 20

6.2.

Identify Device Data......................................................................................................... 21

6.3.

SMART Attributes............................................................................................................. 26

PHYSICAL DIMENSION ................................................................................................... 27© 2022 | Delkin Devices Inc.

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1. INTRODUCTION
1.1. General Description
Delkin’s CFexpress delivers all the advantages of flash disk technology with PCIe Gen3 x 2 interface. The
CFexpress is available in the capacity range of 128GB & 256GB and can reach up to 1770 MB/s read, as well
as 1100 MB/s write high performance. Its lower power consumption makes it an ideal storage choice for highperformance embedded platforms.

1.2. Product Block Diagram

Figure 1-1 CFexpress Product Block Diagram

1.3. Flash Management
1.3.1. Error Correction Code (ECC)
Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data.
However, Delkin’s CFexpress PCIe SSD applies the LDPC (Low Density Parity Check) and RAID ECC algorithm,,
which can detect and correct data errors to ensure data being read correctly, and protects data from
corruption.

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1.3.2. Wear Leveling
NAND flash devices can only undergo a limited number of program/erase cycles, when flash media is not usedevenly, some blocks get updated more frequently than others and the lifetime of device would be reduced
significantly. Thus, wear leveling is applied to extend the lifespan of NAND flash by evenly distributing writeand erase cycles across the media.
Delkin provides advanced wear leveling algorithms, which can efficiently spread out the flash usage throughthe whole flash media area. Moreover, by implementing both dynamic and static wear leveling algorithms,
the life expectancy of the NAND flash is greatly improved.

1.3.3. Bad Block Management
Bad blocks are blocks that do not function properly or contain more invalid bits causing stored data unstable,
and their reliability is not guaranteed. Blocks that are identified and marked as bad by the manufacturer arereferred to as “Initial Bad Blocks”. Bad blocks that are developed during the lifespan of the flash are named“Later Bad Blocks”. Delkin implements an efficient bad block management algorithm to detect the factoryproduced bad blocks and manages bad blocks that appear with use. This practice prevents data being stored
into bad blocks and further improves the data reliability.

1.3.4. TRIM
TRIM is a feature which helps improve the read/write performance and speed of solid state drives (SSD).
Unlike hard disk drives (HDD), SSDs are not able to overwrite existing data, so the available space gradually
becomes smaller with each use. With the TRIM command, the operating system can inform the SSD so thatblocks of data that are no longer in use can be removed permanently. Thus, the SSD will perform the erase
action, which prevents unused data from occupying blocks at all time.

1.3.5. SMART
SMART, an acronym for Self-Monitoring, Analysis and Reporting Technology, is an open standard that allows
a solid state drive to automatically detect its health and report potential failures. When a failure is recordedby SMART, users can choose to replace the drive to prevent unexpected outage or data loss. Moreover, SMART
can inform users impending failures while there is still time to perform proactive actions, such as save data
to another device.

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1.3.6. Over-Provisioning
Over Provisioning refers to the inclusion of extra NAND capacity in a SSD, which is not visible to users nor
usable by users. Therefore, it allows a SSD controller to utilize additional space for better performance and
WAF. With Over Provisioning, the performance and IOPS (Input/Output Operations per Second) are improvedby providing the controller additional space to manage P/E cycles, which enhances the reliability andendurance as well. Moreover, the write amplification of the SSD becomes lower when the controller writes
data to the flash.

1.3.7. Firmware Upgrade
Firmware can be considered as a set of instructions on how the device communicates with the host. Firmware
can be upgraded when new features are added, compatibility issues are fixed, or read/write performancegets improved.

1.3.8. Thermal Throttling
The purpose of thermal throttling is to prevent components in a SSD from over-heating during read and write
operations. Delkin’s CFexpress is designed with an on-die thermal sensor and with its accuracy, firmware canapply different levels of throttling to achieve the purpose of protection efficiently and proactively via SMART
reading.

1.4.

Advanced Device Security Features

1.4.1.

Secure Erase

Secure Erase is a standard NVMe format command and will write all “0xFF” to all cells, to fully wipe all thedata on hard drives and SSDs. When this command is issued, SSD controller will erase its storage blocks andreturn to its factory default settings.

1.4.2.

Crypto Erase

Crypto Erase is a feature that erases all data of an OPAL-activated SSD or a “SED” (Security-Enabled Disk) driveby resetting the cryptographic key of the disk. Since the key is modified, the previously encrypted data will
become useless, achieving the purpose of data security.

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1.4.3.

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Physical Presence SID (PSID)

Physical Presence SID (PSID) is defined by TCG OPAL as a 32-character string and the purpose is to revert SSD
back to its manufacturing setting when the drive is still OPAL-activated. PSID code can printed on a SSD label
when an OPAL-activated SSD supports PSID revert feature.

1.5.

SSD Lifetime Management

1.5.1.

Terabytes Written (TBW)

TBW (Terabytes Written) is a measurement of SSDs’ expected lifespan, which represents the amount of data
written to the device. To calculate the TBW of a SSD, the following equation is applied:
TBW = [(NAND Endurance) x (SSD Capacity)] / [WAF]
NAND Endurance: NAND endurance refers to the P/E (Program/Erase) cycle rating of a NAND flash, per the
manufacturer’s specification.
SSD Capacity: The SSD capacity is the specific capacity in total of a SSD.
WAF: Write Amplification Factor (WAF) is a numerical value representing the ratio between the amount ofdata that a SSD controller writes to the flash and the amount of data that the host’s flash controller
writes. A better WAF, which is near 1, guarantees better endurance and lower frequency of data
written to flash memory.
TBW in this document is based on JEDEC 218/219 workload.

1.5.2.

Media Wear Indicator

Actual life indicator reported by SMART Attribute byte index [5], Percentage Used, recommends User toreplace drive when reaching to 100%.

1.5.3.

Read Only Mode (End of Life)

When a drive is aged by accumulated program/erase cycles, media worn-out may cause increasing numbersof later bad blocks. When the number of usable good blocks falls outside a defined usable range, the drive
will notify the Host through AER event and Critical Warning to enter Read Only Mode to prevent further data
corruption. This acts as notice to the user to replace the drive with another one immediately.

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1.6.

Adaptive Approach to Performance Tuning

1.6.1.

Throughput

401-0546-00 Rev A

Based on the available space of the disk, Delkin’s SSD will regulate the read/write speed and manage thethroughput performance. When significant free space remains, the firmware will continuously perform
read/write action. At this stage, there is still no need to implement garbage collection to allocate and releasememory, which will accelerate the read/write process to improve the performance. However, when the freespace is used up, the controller will slow down the read/write processing and implement garbage collection
to release memory. Hence, read/write performance will become slower.

1.6.2.

Predict & Fetch

Normally, when the Host tries to read data from the PCIe SSD, the PCIe SSD will only perform one read action
after receiving one command. However, Delkin’s controller applies Predict & Fetch to improve the read speed.
When the host issues sequential read commands to the PCIe SSD, the PCIe SSD will automatically expect thatthe following will also be read commands. Thus, before receiving the next command, flash has alreadyprepared the data. Accordingly, this accelerates the data processing time, and the host does not need to waitso long to receive data.

1.6.3.

SLC Caching

Delkin’s controller firmware design currently adopts dynamic caching to deliver better performance forbetter endurance and consumer user experience.

© 2022 | Delkin Devices Inc.

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PRODUCT SPECIFICATIONSCapacity

128GB & 256GB



Supports 32-bit addressing mode

Electrical/Physical Interface


PCIe InterfaceCompliant with NVMe 1.3



PCIe Express Base Ver 3.1



PCIe Gen 3 x 2 lane & backward compatible to PCIe Gen 2 and Gen 1

Support up to QD 128 with queue depth of up to 64K

Support power management

ECC Scheme￭Delkin CFexpress applies the LDPC (Low Density Parity Check) and RAID ECC algorithm

Sector Size Support


512B



4KB



UART/ GPIO

Supports SMART and TRIM commands



LBA Range

IDEMA standard© 2022 | Delkin Devices Inc.

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1.1. Performance

Capacity

Sequential

Random

(CDM)(8GB Burst)

Read

Write

Read

Write

(MB/s)(MB/s)(KIOPS)(KIOPS)

128GB

1550

1000

70K

120K

256GB

1700

1100

150K

250K

NOTES:
1.

Performance may differ according to flash configuration and platform.

2.

Performance is measured with the following conditions(a) CrystalDiskMark 6.0, 1GB range, QD=32T1(b) IOMeter, 1GB range, 4K data size, QD=32T8(c) ATTO, transfer Size 64MB

3.

OS Version: Win10 (64bit), version 1709

• Part Numbers
Capacity© 2022 | Delkin Devices Inc.

Operating Temperature
Commercial (0 to 70°C)

128GB

CFXCOEM-128GB

256GB

CFXCOEM-256GB

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3.

ENVIRONMENTAL SPECIFICATIONS

3.1.

Environmental Conditions

3.1.1.

Temperature and Humidity
Table 3-1 High Temperature
Temperature

Humidity

Operation

70°C

0% RH

Storage

85°C

0% RH

Table 3-2 Low Temperature
Temperature

Humidity

Operation

0°C

0% RH

Storage

-40°C

0% RH

Table 3-3 High Humidity
Temperature

Humidity

Operation

40°C

90% RH

Storage

40°C

93% RH

Table 3-4 Temperature Cycling
Temperature
Operation
Storage

0°C
70°C1
-40°C
85°C

NOTES:
1.

Operation temperature is measured by device temperature sensor. Airflow is suggested and it willallow device to be operated in at appropriate temperature for each component during heavy
workload environments.

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3.1.2.

401-0546-00 Rev A

Shock
Table 3-5 ShockAcceleration ForceNon-operational

3.1.3.

1500G

Vibration
Table 3-6 Vibration
Condition
Non-operational

3.1.4.

Frequency/Displacement

Frequency/Acceleration

20Hz~80Hz/1.52mm

80Hz~2000Hz/20G

Drop
Table 3-7 Drop

Non-operational

3.1.5.

Height of Drop

Number of Drop

80cm free fall

6 face of each unit

Bending
Table 3-8 Bending

Non-operational

3.1.6.

Force

Action≥ 20N

Hold 1min/5 times

TorqueTable 3-9 TorqueNon-operational© 2022 | Delkin Devices Inc.

Force

Action0.5N-m or ±2.5 deg

Hold 1min/5 times

13CFexpress COEM Data Specification

3.1.7.

401-0546-00 Rev A

Electrostatic Discharge (ESD)
Table 3-10 ESD
Specification+/- 4KV

EN 55024, CISPR 24

Device functions are affected, but EUT will be back to its normal or

EN 61000-4-2 and IEC 61000-4-2

operational state automatically.

3.1.8.

EMI Compliance
Table 3-11 EMI
Specification

EN 55032, CISPR 32(CE)
AS/NZS CISPR 32(CE)
ANSI C63.4 (FCC)
VCCI-CISPR 32 (VCCI)CNS 13438 (BSMI)

3.2.

MTBF

MTBF, Mean Time Between Failures, is a measure of a device’s reliability. Its value represents the averagetime between a repair and the next failure. The unit of MTBF is in hours. The higher the MTBF value, thehigher the reliability of the device. The predicted result of Delkin’s CFexpress is more than 1.5 million hours
at 0°C.
Our MTBF result is based on Telcordia methodology. Please note that a lower MTBF should be expected forhigher capacity drives, and we apply the lowest MTBF for all capacities.

3.3.

Certification & Compliance



RoHS



WHQL



PCI Express Base 3.1



UNH-IOL NVM Express Logo

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4.

ELECTRICAL SPECIFICATIONS

4.1.

Supply Voltage
Table 4-1 Supply Voltage
Parameter

RatingOperating Voltage

Min = 3.14V
Max = 3.47 V

Rise Time (Max/Min)

100 ms / 0.1 ms

Fall Time (Max/Min)

5s / 1 ms

Min. Off Time1

1s

NOTE:
1.

Minimum time between power removed from SSD (Vcc < 100 mW) and power re-applied to the drive.

4.2.

Power Consumption
Table 4-2 Power Consumption in mW
Read

Write

Read

Write

(Max)

(Max)

(Avg.)(Avg.)

128GB

2310

1600

2290

1550

256GB

2470

2320

2450

2260

Capacity

NOTES:
1.

Based on ambient temperature.

2.

Use CrystalDiskMark 6.0 with the setting of 1000MB. Sequentially read and write the disk for 5 times, andmeasure power consumption during sequential Read [1/5]~[5/5] or sequential Write [1/5]~[5/5]3.

Power Consumption may differ according to flash configuration and platform.

4.

The measured power voltage is 3.3V.

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Table 4-3 Power Consumption in mW
Capacity

Seq. Write

PS3

PS4

1140

30

5

1200

30

5

PS0

PS1

PS2

128GB

1550

1250

256GB

2260

1380

NOTES:
1.

Based on ambient temperature.

2.

The average value of power consumption is achieved based on 100% conversion efficiency.

3.

The measured power voltage is 3.3V.

4.

The temperature of a storage device in PS1 should remain constant or should slightly decrease for all
workloads so the actual power in PS1 should be lower than PS0.

5.

The temperature of a storage device in PS2 should decrease sharply for all workloads so the actual powerin PS2 should be lower than PS1.

Power Save Modes - PS0 Default Operational, PS1 Light Throttle, PS2 Heavy Throttle, PS3 Non-operational with
fast recover, PS4 Lowest non-zero power state.

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5.

INTERFACE

5.1.

Pin Assignment and Descriptions

Table 5-1 lists the pin assignment of the media.
The I/O column indicates the signal direction viewed from the media: “I” indicates the signal input to themedia and “O” indicates the signal output from the media. In the Connection column, “R” indicates the signal
is required, “Opt” indicates the signal is optional, and “NC” indicates the signal shall not be connected.

Table 5-1 Pin Assignment and Description of CFexpress
Pin No.

Signal

21

GND

20

PETp0

19

PETn0

18

GND

17

PERp0

16

PERn0

15

GND

14

REFCLK+

13

I/O

Media

Host

R

R

I

R

R

I

R

R

R

R

O

R

R

O

R

R

R

R

I

R

R

REFCLK-

I

R

R

12

INS#

O

R

R

1

11

CLKREQ#

O

R

Opt

2

10

+3.3V

R

R

9

PERST#

R

R

8

Reserved

NC

NC

7

Reserved

NC

NC

6

PETp1

I

Opt

Opt

5

PETn1

I

Opt

Opt

4

GND

R

Opt

3

PERp1

O

Opt

Opt

2

PERn1

O

Opt

Opt

1

GND

R

R

I

Notes

4

3

1. A host pull-up resistor in the range of 100kΩ-200kΩ is required on this pin.
2. A host pull-up resistor (≥5kΩ) is required on this pin.
3. If the PCI Express Transmitter differential pair Lane 1 and Receiver differential pair Lane 1 are implemented, thispin shall be connected to ground.

4. Note that this pin is assigned to USBEN in XQD specification.

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Table 5-2 Signal / Pin Descriptions of CFexpress
Category

Signal Name

Description

PETp0
PETn0
PERp0
PCI Express

PERn0

PCI Express 8 GT/s two Lane. 2 transmitter differential pairs and 2

PETp1

receiver differential pairs.

PETn1
PERp1
PERn1
REFCLK+REFCLKAuxiliary

PCI Express differential (and spread-spectrum) reference clock.

PERST#PCI Express functional reset.

INS#

This signal is used for media detection and power control.

CLKREQ#

This signal is used to indicate when REFCLK is needed for the PCI
Express interface.

Power Source+3.3V

3.3V power

GroundGND

Ground© 2022 | Delkin Devices Inc.

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6.

SUPPORTED COMMANDS

6.1.

NVMe Command List
Table 6-1 Admin Commands
OpcodeCommand Description

00h

Delete I/O Submission Queue

01h

Create I/O Submission Queue

02h

Get Log Page

04h

Delete I/O Completion Queue

05h

Create I/O Completion Queue

06h

Identify

08h

Abort

09h

Set Features

0Ah

Get Features

0Ch

Asynchronous Event Request

10h

Firmware Activate

11h

Firmware Image Download

Table 6-2 Admin Commands – NVM Command Set Specific
OpcodeCommand Description

80h

Format NVM

81hSecurity Send

82hSecurity Receive

Table 6-3 NVM Commands
OpcodeCommand Description

00h

Flush

01h

Write

02h

Read

04h

Write Uncorrectable

08h

Write Zeroes

09hDataset Management© 2022 | Delkin Devices Inc.

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6.2.

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Identify Device Data

The following table details the sector data returned by the IDENTIFY DEVICE command.

Table 6-4 Identify Controller Data Structure
Bytes

O/M

Description

01:00

M

PCI Vendor ID (VID)

0x1E33

03:02

M

PCI Subsystem Vendor ID (SSVID)

0x1E33

23:04

M

Serial Number (SN)

SN

63:24

M

Model Number (MN)

Model Number

71:64

M

Firmware Revision (FR)FW Name72

M

Recommended Arbitration Burst (RAB)

0x01

75:73

M

IEEE OUI Identifier (IEEE)

0x000000

76

O

Controller Multi-Path I/O and Namespace Sharing Capabilities (CMIC)

0x00

77

M

Maximum Data Transfer Size (MDTS)

0x09

79:78

M

Controller ID (CNTLID)

0x0000

83:80

MVersion (VER)

0x00010300

87:84

M

RTD3 Resume Latency (RTD3R)

TBD

91:88

M

RTD3 Entry Latency (RTD3E)

TBD

95:92

M

Optional Asynchronous Events Supported (OAES)

0x00000100

99:96

M

Controller Attributes (CTRATT)

0x00000002

111:100

Reserved

0x00

127:112FRU Globally Unique Identifier (FGUID)

0x00
0x00

239:128-

Reserved

255:240-

Refer to the NVMe Management Interface

Default Value

Specification for definition

0257:256

M

Optional Admin Command Support (OACS)

0x0017258

M

Abort Command Limit (ACL)

0x00

259

M

Asynchronous Event Request Limit (AERL)

0x03

260

M

Firmware Updates (FRMW)

0x12 (TBD)

261

M

Log Page Attributes (LPA)

0x06

262

M

Error Log Page Entries (ELPE)

0x0F

263

M

Number of Power States Support (NPSS)

0x04

264

M

Admin Vendor Specific Command Configuration (AVSCC)

0x01

265

O

Autonomous Power State Transition Attributes (APSTA)

0x01

267:266

M

Warning Composite Temperature Threshold (WCTEMP)(TBD)

269:268

M

Critical Composite Temperature Threshold (CCTEMP)(TBD)

271:270

O

Maximum Time for Firmware Activation (MTFA)

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275:272

O

Host Memory Buffer Preferred Size (HMPRE)(TBD)

279:276O

Host Memory Buffer Minimum Size (HMMIN)(TBD)

295:280

O

Total NVM Capacity (TNVMCAP)

non-zero

311:296

O

Unallocated NVM Capacity (UNVMCAP)

0315:312O

Replay Protected Memory Block Support (RPMBS)(TBD)

317:316O

Extended Device Self test Time (EDSTT)

0x001E

318

O

Device Self test Options (DSTO)

0x01

319

M

Firmware Update Granularity (FWUG)

0x1

321:320

M

Keep Alive Support (KAS)

0x0001

323:322O

Host Controlled Thermal Management Attributes (HCTMA)1

325:324O

Minimum Thermal Management Temperature (MNTMT)(TBD)

327:326

O

Maximum Thermal Management Temperature (MXTMT)(TBD)

331:328

O

Sanitize Capabilities (SANICAP)

0x00000006

511:316-

Reserved

0x0

NVM Command Set Attributes
512

M

Submission Queue Entry Size (SQES)

0x66

513

M

Completion Queue Entry Size (CQES)

0x44

515:514-

Reserved

0x0080519:516

M

Number of Namespaces (NN)0x00000001

521:520

M

Optional NVM Command Support (ONCS)

0x005F

523:522

M

Fused Operation Support (FUSES)

0

524

M

Format NVM Attributes (FNA)

0x01

525

M

Volatile Write Cache (VWC)

0x01

527:526

M

Atomic Write Unit Normal (AWUN)

0x00FF

529:528

M

Atomic Write Unit Power Fail (AWUPF)

0x0000530

M

NVM Vendor Specific Command Configuration (NVSCC)

0x01

531

M

Reserved

0x00

533:532

O

Atomic Compare & Write Unit (ACWU)

0x0000535:534

M

Reserved

0x0000539:536O

SGL Support (SGLS)

0x00000000

767:540

M

Reserved

0x0

IO Command Set Attributes
2047:704

M

Reserved

0x0

2078:2048

M

Power State 0 Descriptor(TBD)

2111:2080

O

Power State 1 Descriptor(TBD)

2143:2112

O

Power State 2 Descriptor(TBD)

2175:2144

O

Power State 3 Descriptor(TBD)

2207:2176

O

Power State 4 Descriptor(TBD)© 2022 | Delkin Devices Inc.

22

CFexpress COEM Data Specification

401-0546-00 Rev A

…

-

(N/A)

0

3071:3040

O

Power State 31 Descriptor(TBD)

Vendor Specific4095:3072

O

Vendor Specific (VS)© 2022 | Delkin Devices Inc.

Reserved

23

CFexpress COEM Data Specification

401-0546-00 Rev A

Table 6-5 Identify Namespace Data Structure & NVM Command Set Specific
Bytes

Description

7:0

Namespace Size (NSZE)

15:8

Namespace Capacity (NCAP)

23:16

Namespace Utilization (NUSE)

24

Namespace Features (NSFEAT)

25

Number of LBA Formats (NLBAF)

26

Formatted LBA Size (FLBAS)

27

Metadata Capabilities (MC)28

End-to-end Data Protection Capabilities (DPC)29

End-to-end Data Protection Type Settings (DPS)30

Namespace Multi-path I/O and Namespace Sharing Capabilities (NMIC)

31

Reservation Capabilities (RESCAP)

32

Format Progress Indicator (FPI)

33

Deallocate Logical Block Features (DLFEAT)

35:34

Namespace Atomic Write Unit Normal (NAWUN)

37:36

Namespace Atomic Write Unit Power Fail (NAWUPF)

39:38

Namespace Atomic Compare & Write Unit (NAWWU)

41:40

Namespace Atomic Boundary Size Normal (NABSN)

43:42

Namespace Atomic Boundary Offset (NABO)

45:44

Namespace Atomic Boundary Size Power Fail (NABSPF)

47:46

Namespace Atomic Optimal IO Boundary (NOIOB)

63:48

NVM Capacity (NVMCAP)

103:64

Reserved

119:104

Namespace Globally Unique Identifier (NGUID)

127:120IEEE Extended Unique Identifier (EUI64)

131:128

LBA Format 0 Support (LBAF0)

135:132

LBA Format 1 Support (LBAF1)

139:136

LBA Format 2 Support (LBAF2)

143:140

LBA Format 3 Support (LBAF3)

147:144

LBA Format 4 Support (LBAF4)

151:148

LBA Format 5 Support (LBAF5)

155:152

LBA Format 6 Support (LBAF6)

159:156

LBA Format 7 Support (LBAF7)

163:160

LBA Format 8 Support (LBAF8)

167:164

LBA Format 9 Support (LBAF9)

171:168

LBA Format 10 Support (LBAF10)

175:172

LBA Format 11 Support (LBAF11)© 2022 | Delkin Devices Inc.

24

CFexpress COEM Data Specification
179:176

LBA Format 12 Support (LBAF12)

183:180

LBA Format 13 Support (LBAF13)

187:184

LBA Format 14 Support (LBAF14)

191:188

LBA Format 15 Support (LBAF15)

383:192

Reserved

4095:384

Vendor Specific (VS)401-0546-00 Rev A

Table 6-6 List of Identify Namespace Data Structure for Each Capacity
Capacity

Byte[7:0]:(GB)

Namespace Size (NSZE)128

EE7C2B0

256

1DCF32B0© 2022 | Delkin Devices Inc.

25

CFexpress COEM Data Specification

6.3.

401-0546-00 Rev A

SMART Attributes
Table 6-7 SMART Attributes (Log Identifier 02h)

Bytes Index

Bytes

[0]

1

Critical Warning

[2:1]

2

Composite Temperature[3]

1

Available Spare[4]

1

Available Spare Threshold[5]

1

Percentage Used

[31:6]

26

Reserved[47:32]16

Data Units Read

[63:48]16

Data Units Written[79:64]16

Host Read Commands[95:80]16

Host Write Commands[111:96]

16

Controller Busy Time

[127:112]

16

Power Cycles[143:128]

16

Power On Hours[159:144]

16

Unsafe Shutdowns[175:160]

16

Media and Data Integrity Errors[191:176]

16

Number of Error Information Log Entries[195:192]

4

Warning Composite Temperature Time

[199:196]

4

Critical Composite Temperature Time

[201:200]2

Temperature Sensor 1[203:202]2

Temperature Sensor 2[205:204]2

Temperature Sensor 3[207:206]2

Temperature Sensor 4© 2022 | Delkin Devices Inc.

Description

26

CFexpress COEM Data Specification

7.

401-0546-00 Rev A

PHYSICAL DIMENSION

CFexpress : 38.50mm (L) x 29.60mm (W) x 3.8mm (H)WARNING: This product may contain chemicals known to the State of California to cause
cancer, birth defects, or other reproductive harm. For more information go towww.p65warnings.ca.gov.

© 2022 | Delkin Devices Inc.

27