SGC7178-100A

C-Band Internally Matched GaN-HEMT◼ Features••••••High Output Power: Pout=50dBm (Typ.)High Linear Gain: GL=12.0 dB (Typ.)High Power Added Efficiency: PAE=36% (Typ.)Broad Band: 7.1 to 7.8 GHz
Internally Matched
Hermetically Sealed Package◼ Description
The SGC7178-100A is a high power GaN-HEMT that is internallymatched for C-band Application to provide optimum power and gain
in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature T c =25 deg.C)
Item
SymbolDrain-Source Voltage
VDS
Gate-Source Voltage
VGSStorage Temperature
Tstg
Channel Temperature
Tch
Input PowerPin
RECOMMENDED OPERATING CONDITION
Item
SymbolDrain-Source Voltage
VDS
Forward Gate Current
I GF
Reverse Gate Current
I GR
Channel Temperature
TchRating
50 (DC only), 45 (RF)-15-55 to +125
250
42 (VDS<=35V)

Condition

Limit<=35<=89.8>=-8<+200

Rg=51ohm
Rg=51ohm

ELECTRICAL CHARACTERISTICS (Case Temperature T c =50deg.C)
Item
Pinch-off Voltage
Frequency Range
Linear Gainat Pin=30dBm

Outpur Power at Pin=40dBm
Drain Current at Pout=49.3dBm
Power Gainat Pout=49.3dBm

Power Added Efficiency at Pout=49.3dBm
Gain Flatness at Pin=30dBm

SymbolVP
freq.
GLPoutI DSR
GPPAEΔGUnitV
V
deg.C
deg.CdBm

Condition
VDS =50V, I DS =12mA
VDS =35V-typ.
I DS(DC )=0.8A-typ.
Vgs-constantfreq.=7.1, 7.4, 7.8 GHz,CW

3rd Order Inter modulation
Distortion

IM3

f=7.1, 7.8GHz
Δf=10MHz, 2-tone Test
Pout=44dBm (S.C.L.)

Thermal Resistance

Rth

Channel to Case (Pdiss=65W)

Unit
VmA
mA
deg.C

Min.
7.1
11.0
49.0
8.7
33-LimitTyp.
-4.5
12.0
50.0
6.0
10.0
36-Max.
7.8
7.0
1.5

-25.0

-27.0

-dBc

-0.65

0.8

deg.C/W

Unit
V
GHzdBdBm
AdB%
dB

S.C.L. : Single Carrier Level
CASE STYLE
RoHS Compliance
ESD

Edition 1.1
Dec. 2021

IKYESClass 2

2000V to <4000V
Note : Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-

SGC7178-100A

C-Band Internally Matched GaN-HEMT◼ RF Characteristics
Output Power & Power Added Efficiency vs. Input Power
VDS=35V, IDS(DC)=0.8A

PowerPAE

IM3 &IM5 vs. Output Power(S.C.L.)
VDS=35V, IDS(DC)=0.8A
Δf=10MHzIM3IM5

Edition 1.1
Dec. 2021-2-

SGC7178-100A

C-Band Internally Matched GaN-HEMT⚫ Package Out line
Case Style : IK

1. Gate2. Source (Flange)
3. Drain
4. Source (Flange)
Tolerance: ±0.15
Unit: mm

Edition 1.1
Dec. 2021-3-

SGC7178-100A

C-Band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous wasteprocedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation ofthe device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims ordamages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operating
conditions.
If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the priorauthorization of the Japanese government will be required for export of those products from Japan.

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Information in this document is subject to change without notice.

Edition 1.1
Dec. 2021-4-