SGC9395-200B-R

X-band Internally Matched GaN-HEMT◼ Features••••••High Output Power: Psat=54.0dBm (Typ.)High Gain: Gp=10.0dB (Typ.)High Power Added Efficiency: PAE=39% (Typ.)Frequency Band: 9.3 to 9.5GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package◼ Description
The SGC9395-200B-R is a high power GaN-HEMT that is internallymatched for X-band radar bands to provide optimum power and gain
in a 50ohm system.

ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
SymbolRating
Item
VDS55
Drain-Source Voltage-15
VGS
Gate-Source Voltage-55 to +125Tstg
Storage Temperature+250Tch
Channel Temperature
RECOMMENDED OPERATING CONDITION
SymbolItemVDS
Drain-Source Voltage
IGF
Forward Gate Current
IGR
Reverse Gate Current
Tch
Channel Temperature
Pout
Output PowerUnit
VV
deg.C
deg.C

Condition

Limit<=50<=123.3>=-9.0<+200<=P5dB

Rg=51ohm
Rg=51ohm

Unit
V
mA
mA
deg.C
dBm

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item

SymbolPinch-off Voltage
Frequency Range
Output Power at Pin=44dBm
Power Gain at Pout=53dBm
Drain Current at Pin=44dBm
Power Added Efficiency

VpFreq.
Psat
Gp
IDSR

Gain Flatness

ΔGat Pin=44dBm

Thermal Resistance

CASE STYLE
RoHS Compliance
ESD

Edition 1.0
Jul. 2022

PAE
Rth

Condition
VDS=50V, IDS=13.0mA
VDS=50V-typ.
IDS(DC)=0.66A-typ.
Pulse Width=100μsec.
Duty=10%Channel to Case
(Pdiss=100W,CW)

Min.
9.3
53.0
9.0-

Limit
Typ.
-4.5
54.0
10.0
11.6

Max.
9.5
14.5-39-%-1.6-dB-

0.6

0.8

deg.C/W

Unit
VGHzdBmdBAIKYES
2000V to <4000V
Class 2
Note: Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-

SGC9395-200B-R

X-band Internally Matched GaN-HEMT

Output Power &Power Added Efficiency vs. Input Power
VDS=50V, IDS(DC)=0.66A
PW=100µsec., Duty=10%
5780

575570555360515049

404730452043103234363840424446

Output Power vs. Frequency
VDS=50V, IDS(DC)=0.66A
PW=100µsec., Duty=10%

Output Power [dBm]

Power Added Efficiency [%]Output Power [dBm]⚫ RF Characteristics

535149474543
9.2

Input Power [dBm]
9.3[GHz]

9.4[GHz]

Pin=34[dBm]
Pin=38[dBm]
Pin=42[dBm]
Pin=45[dBm]

9.5[GHz]⚫ Thermal Characteristics In Pulsed Operation

Rth @Tf=75deg.C [deg.C/W]

Rth vs. Pulse Width
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0

Duty=10%
Duty=20%

10100

1000

Pulse Width [µsec.]

Edition 1.0
Jul. 2022

9.3
9.4
9.5
Frequency [GHz]

-2-

9.6

Pin=36[dBm]
Pin=40[dBm]
Pin=44[dBm]SGC9395-200B-R

X-band Internally Matched GaN-HEMT⚫ Package Outline
Case Style : IK

1. Gate2. Source
3. Drain
4. Source
Unit: mmTolerance: ±0.15

Edition 1.0
Jul. 2022-3-

SGC9395-200B-R

X-band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operating
conditions.
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Information in this document is subject to change without notice.

Edition 1.0Jul. 2022-4-