Research paper (International)

Lead Author
種別/Type 対象/Area

代表者/Lead author

国際/
投稿論⽂
/Research Internation Hisashi Kitami
alPaper
Co-Author
種別/Type 対象/Area

代表者/Lead author

国際/
投稿論⽂
/Research Internation Yutaka Furubayashi
alPaper

共著者/Co-Author
Masaru Miyashita, Toshiyuki Sakemi, Yasushi
Aoki, Takanori Kato

共著者/Co-Author

題名/Title

18th Mar., 2020

発表先/Publication

Quantitative analysis of ionization rates of depositing particles
in reactive plasma deposition using mass-energy analyzer and Japanese Journal of Applied Physics 54, 01AB05 (2015)
Langmuir probe

題名/Title

発表先/PublicationYM

リンク/Link

2014

11 http://dx.doi.org/10.7567/JJAP.54.01AB05

YM

リンク/Link

Makoto Maehara, Tetsuya Yamamoto

Tailoring of Point Defects in Polycrystalline Indium Tin Oxide
Films with Postirradiation of Electronegative Oxygen IonsACS Applied Electronic Materials, 1 (2019) pp. 1545-1551.

2019

7 https://pubs.acs.org/doi/10.1021/acsaelm.9b00317

国際/投稿論⽂/Research Internation Yutaka Furubayashi
alPaper

Makoto Maehara, Tetsuya Yamamoto

New insights on factors limiting the carrier transport in verythin amophous Sn-doped In2O3 films with high Hall mobility

Nanosclae Research Letters (2019) 14:120

2019

4 https://doi.org/10.1186/s11671-019-2948-4

国際/
投稿論⽂
/Research Internation Takahiro Yamada
alPaper

Takuya Nebiki, Seiichi Kishimoto, Hisao Makino,Kiyoshi Awai, Tadashi Narusawa, Testuya
Yamamoto

Dependences of structural and electrical properties onthickness of polycrystalline Ga-doped ZnO thin films prepared Superlattices and Microstructures, 42 (2007) pp.68-73
by reactive plasma deposition

2007

6 https://doi.org/10.1016/j.spmi.2007.04.080

国際/
投稿論⽂
/Research Internation Tetsuya Yamamoto
alPaper

Takahiro Yamada, Toshiyuki Sakemi, ShoShirakata, Minoru Osada, Seiichi Kishimoto,
Kiyoshi Awai, Hisao Makino, T. Mitsunaga

ZnO:Ga-Based transparent conductive films: An attractive
potential for use in flat panel display

Ceramic Transactions 196 (2006) pp. 475-489

2006

6 https://doi.org/10.1002/9781118144121.ch47

国際/
投稿論⽂
/Research Internation K. Sakai
alPaper

T. Kakeno, T. Ikari, S. Shirakata, T. Sakemi, K.
Awai and T. Yamamoto

Defect centers and optical absorption edge of degenerated
semiconductor ZnO thin films grown by a reactive plasma
deposition by means of piezoelectric photothermal
spectroscopy

Jounal of Applied Physics 99 (2006) 043508

2006

2 https://doi.org/10.1063/1.2173040

国際/
投稿論⽂
/Research Internation Sho Shirakata
alPaperToshiyuki Sakemi, Kiyoshi Awai, Tetsuya
Yamamoto

Electrical and optical properties of large area Ga-doped ZnO
thin films prepared by reactive plasma deposition

Superlattices and Microstructures 39 (2006) pp.218-228

2005

9 https://doi.org/10.1016/j.spmi.2005.08.045

国際/
投稿論⽂
/Research Internation Tetsuya Yamamoto
alPaperTooru Mitsunaga, Minoru Osada, Keigo Ikeda,Seiichi Kishimoto, Kiyoshi Awai, Hisao Makino,
Takahiro Yamada, Toshiyuki Sakemi, ShoShirakata

Effects of oxygen-gas flow rate on lattice dynamics andmicrostructures for Ga-doped ZnO thin films prepared byreactive plasma deposition

Superlattices and Microstructures, 38 (2005) pp. 369-376.

2005

9 https://doi.org/10.1016/j.spmi.2005.08.007

国際/
投稿論⽂
/Research Internation Minoru Osada
alPaper

Toshiyuki Sakemi, TetsuyaYamamoto

The effects of oxygen partial pressure on local structuralproperties for Ga-doped ZnO thin films

Thin Solid Films, 494 (2006) pp. 38-41

2005

8 https://doi.org/10.1016/j.tsf.2005.07.179

国際/
投稿論⽂
/Research Internation T. Kakeno
alPaper

K. Sakai, H. Komaki, K. Yoshino, T. Sakemi, K.
Awai, T. Yamamoto, T. Ikari

Dependence of oxygen flow rate on piezoelectric
photothermal spectra of ZnO thin films grown by a reactive
plasma deposition

Materials Science and Engineering B 118 (2005) pp. 70-73

2005

1 https://doi.org/10.1016/j.mseb.2004.12.014

国際/
投稿論⽂
/Research Internation K. Iwata
alPaper

T. Sakemi, A. Yamada, P. Fons, K. Awai, T.
Yamamoto, S. Shirakata, K. Matsubara, H.
Tampo, K. Sakurai, S. Ishizuka, S. Niki

Improvement of ZnO TCO film growth for photovoltaic devices
Thin Solid Films, 480-481 (2005) pp.199-203
by reactive plasma deposition (RPD)

2005

1 https://doi.org/10.1016/j.tsf.2004.11.072

国際/
投稿論⽂
/Research Internation K. Iwata
alPaper

T. Sakemi , A. Yamada , P. Fons , K. Awai , T.
Yamamoto , M. Matsubara , H. Tampo , K.
Sakurai , S. Ishizuka, S. Niki

Doping properties of ZnO thin films for photovoltaic devices
grown by URT-IP(ion plating) method

Thin Solid Films, 451-452 (2004) pp.219-223

2004

3 https://doi.org/10.1016/j.tsf.2003.10.095

投稿論⽂
国際/
/Research Internation T. Yamamoto
PaperalT. Sakemi, K. Awai and S. Shirakata

Dependence of carrier concentrations on oxygen pressure for
Ga-doped ZnO prepared by ion plating method

Thin Solid Films, 451-452 (2004) pp.439-442

2003

12 https://doi.org/10.1016/j.tsf.2003.10.138

国際/
投稿論⽂
/Research Internation S. Shirakata
alPaper

T. Sakemi, K. Awai, T. Yamamoto

Optical and electrical properties of URT-IP ZnO thin films forphotovoltaic devices

Thin Solid Films, 451-452 (2004) pp.212-218

2003

12 https://doi.org/10.1016/j.tsf.2003.10.093

国際/
投稿論⽂
/Research Internation K. Iwata
alPaper

T. Sakemi, A. Yamada, P. Fons, K. Awai, T.
Yamamoto, M. Matsubara, H. Tampo, S. Niki

Growth and electrical properties of ZnO thin films depositedby novel ion plating method

Thin Solid Films, 445 (2003) 274-277

2003

11 https://doi.org/10.1016/S0040-6090(03)01160-X

国際/
投稿論⽂
/Research Internation S. Shirakata
alPaper

T. Sakemi, K. Awai, T. Yamamoto

Optical and electrical properties of ZnO films prepared byURT-IP Method

Thin Solid Films, 445 (2003) 278-283

2003

10 https://doi.org/10.1016/S0040-6090(03)01161-1