SGC7172-120AC-band Internally Matched GaN-HEMT

 Features•••••High Output Power: Psat=51.3dBm (typ.)High Gain: Gp=12.3dB (typ.)High Efficiency: PAE=43% (typ.)
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package

 Description
The SGC7172-120A is a high power GaN-HEMT that is internallymatched for C-band applications to provide optimum power and gain
in a 50ohm system.

ABSOLUTE MAXIMUM RATING (Case Temperature T c=25 deg.C)
ItemSymbolRating
Drain-Source Voltage
55VDS
Gate-Source Voltage-15VGSStorage Temperature-55 to +125Tstg
Channel Temperature+250
Tch
RECOMMENDED OPERATING CONDITION
Item
SymbolDrain-Source Voltage
VDS
Forward Gate Current
I GF
Reverse Gate Current
I GR
Channel Temperature
Tch

Unit
V
V
deg.Cdeg.C

Condition

Limit<=50<=89.8>=-8<+200

Rg=51ohm
Rg=51ohm

Unit
V
mA
mA
deg.C

ELECTRICAL CHARACTERISTICS (Case Temperature T a=25 deg.C)
Item

SymbolPinch-off Voltage
Frequency Range
Output PowerPower Gain
Gain Flatness
Power Added Efficiency

VP
Freq.
Psat
GPΔGPAE

3rd Order IntermodulationDistortion

IM3

Thermal Resistance

Rth

CASE STYLE
RoHS Compliance
ESD

Edition 1.0Jan. 2019

Condition
VDS=50V, I DS=12mA
VDS=50V,
I DS(DC)=1.3A,
Freq.=7.14, 7.19, 7.24GHz,
Pin=39dBm, CW
f=7.24GHz, Δf=10MHz,
2-tone Test,
Pout=44.0dBm(S.C.L.)
Channel to Case
(Pdiss=65W)

Min.
7.14
50.35
11.35
38.5

Limit
Typ.
-4.5
51.30
12.30
43.0

Max.
7.24
1.5---33.0-dBc

-0.65

0.80

deg.C/W

Unit
V
GHzdBm
dB
dB%

IK
YES
Class 22000V to <4000V
Note: Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-

SGC7172-120A

C-band Internally Matched GaN-HEMT

 Package Outline
Case Style: IK

1. Gate2. Source
3. Drain
4. Source
Unit:mmTolerance: ±0.15

Edition 1.0
Jan. 2019-2-

SGC7172-120A

C-band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management
 Do not put this product into the mouth.
 Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
 Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electricwarrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims ordamages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operatingconditions.
If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the priorauthorization of the Japanese government will be required for export of those products from Japan.

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Information in this document is subject to change without notice.

Edition 1.0Jan. 2019-3-