SGK1314-30A

Ku-Band Internally Matched GaN-HEMT◼ Features•••••

High Output Power: Pout=45.0dBm (Typ.)High Gain: GL=8.5dB (Typ.)High Power Added Efficiency: PAE=32% (Typ.)Broad Band: 13.75 to 14.5GHz
Hermetically Sealed Package◼ Description
The SGK1314-30A is a high power GaN-HEMT that is internallymatched for standard communication bands to provide optimum
power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
ItemSymbol
Drain-Source Voltage
VD SRating
26UnitV

Gate-Source Voltage

VG S-10V

Total Power Dissipation

PT118W

Storage Temperature

T s tg-55 to +125

deg.C

Channel Temperature

Tch+250

deg.C

Case Temperature

T c as e-40 to +125

deg.C

Input Power

Pin<=43dBm

RECOMMENDED OPERATING CONDITION
Item
Drain-Source Voltage

SymbolVD S

Condition

Limit<=24Unit
V

Forward Gate Current

IG F

Rg=100ohm<=10.1mA

Reverse Gate Current

IG R

Rg=100ohm>=-3.2mA

Channel Temperature

Tch<+193

deg.C

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item

SymbolCondition

Limit
Typ.
10.5Max.
-Unit

Saturated Drain Current

ID SS

VD S =10V, VG S =0V

Min.
-

Trans ConductanceGm

VD S =24V, ID S =0.9A-

3.1-Pinch-off Voltage

VP

VD S =10V, ID S =0.9mA--3.6-

VFrequency Range

f

13.75

-

14.5

GHz

44.0

45.0

-dBm

7.5

8.5-

dB

6.0

7.0-

dB-

3.3

4.6

A

-32-%

Output Power at Pin=40dBm

Pout

Linear Gain at Pin=24dBm

GLPower Gain at Pout=41.5dBm

GPDrain Current at Pin=40dBm

ID SR

Power Added Efficiency at Pin=40dBm

PAEGain Flatness at Pin=24dBm

ΔＧVD S =24V(typ.)ID S(D C )=0.9A(typ.)Vgs-constant

3rd Order Intermodulation
Distortion

IM3

f=13.75GHz, 14.5GHz
Δf=10MHz, 2-tone Test
Pout=38.5dBm (S.C.L.)

Thermal Resistance

Rth

Channel to Case
(Tc=25deg.C, Pdis s =21.6W)

AS--

1.6

dB

-25.0

-30.0-dBc

-

1.5

1.9

deg.C/W

S.C.L. : Single Carrier Level
CASE STYLE
RoHS Compliance
ESD

Edition 1.2
Jun. 2023

IBKYESClass 22000V to < 4000V
Note : Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-

SGK1314-30A

Ku-Band Internally Matched GaN-HEMT⚫ Package Out line
Case Style : IBK

(1)

(4)

(2)

(3)

Edition 1.2
Jun. 2023-2-

SGK1314-30A

Ku-Band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous wasteprocedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a seriouseffect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operatingconditions.
If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the priorauthorization of the Japanese government will be required for export of those products from Japan.

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Information in this document is subject to change without notice.

Edition 1.2
Jun. 2023-3-