SGM6901VU

X-band 24W GaN-HEMT Module◼ Features•••••High Output Power: Psat=45.3dBm (Typ.)High Gain: Gp=23.3dB (Typ.)Frequency Band: 8.5 to 10.1GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed SMT Package◼ Description
The SGM6901VU is a 24W GaN-HEMT Module that is internallymatched for X-band radar bands to provide optimum power and gain
in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
SymbolRating
Drain-Source Voltage
55VDS
Gate-Source Voltage-15
VGS
Storage Temperature-55 to +125
Tstg
Channel Temperature+250
Tch
RECOMMENDED OPERATING CONDITION
Item
SymbolDrain-Source Voltage
VDS
Forward Gate Current

IGF

Reverse Gate Current

IGR

Channel Temperature

Tch

Unit
VV
deg.Cdeg.C

Condition

Limit
<=50
<=4.7
<=22.5

1st stage Rg=750ohm
2nd stage Rg=150ohm
1st stage Rg=750ohm
2nd stage Rg=150ohm

SymbolPinch-off Voltage

VP (1st stage)
VP (2nd stage)

Frequency Range

Freq.
Psat (8 .5 G H z,

Output Power8 .9 G H z, 9 .3 G H z,
9 .5 5 G H z, 9 .8 G H z)

Psat (1 0 .1 G H z)
Power GainGP

Drain Current

IDSR

Power Added Efficiency

PAE

Gain Flatness

ΔG

Thermal Resistance

Rth

CASE STYLE
RoHS Compliance
ESD

VU
YES
Class 1B

mA
deg.C

Min.
-Limit
Typ.
-4.5
-4.5

Max.
-

8.5

-

10.1

GHz

43.8

45.3

-dBm

43.3

44.8

-dBm

VGG2 =2.88V(Typ.)Pulse Width=100μsec.
Duty=10%
Pin=22dBm

-

23.3

-

dB-

1.8

2.4

A-

38-%-

0.8-dB

Channel to Case at 40W Pdc

-2.1

2.7

deg.C/W

Condition
VDS=50V, IDS=0.4mA
VDS=50V, IDS=2mA
VDS=50V(Typ.)IDS(DC )1 =40mA(Typ.)IDS(DC )2 =160mA(Typ.)
VGG1 =2.88V(Typ.)

Unit
V
V

500V to <1000V
Note: Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)

ORDERING INFORMATIONPart Number
Order Unit
SGM6901VU
No limitation
SGM6901VUT
500pcs.
Edition 2.0
Sep. 2023

mA>=-0.3>=-1.3<+200

ELECTRICAL CHARACTERISTICS (Case Temperature T c=25 deg.C)
Item

Unit
VPacking
48 pcs./Tray x 4 Tray = 192 pcs. / Packing
500 pcs./Reel x 1 Reel = 500 pcs. / Packing-1-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ TYPICAL PERFORMANCE
Figure 1.
Output Power vs. Frequency
VDS=50V, IDS(DC)=0.2A
PW=100μsec, Duty=10%

Figure 2.
Power Added Efficiency vs. Frequency
VDS=50V, IDS(DC)=0.2A
PW=100μsec, Duty=10%

Figure 3.
Output Power vs. Input Power
VDS=50V, IDS(DC)=0.2A
PW=100μsec, Duty=10%

Figure 4.
Power Added Efficiency vs. Input Power
VDS=50V, IDS(DC)=0.2A
PW=100μsec, Duty=10%

Edition 2.0
Sep. 2023-2-SGM6901VU

X-band 24W GaN-HEMT Module⚫ Thermal Characteristics
Figure 5.
Rth vs. Pulse Width
Tc=75deg.C, Pdiss=42W

Edition 2.0
Sep. 2023-3-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ Block Diagram⚫ Evaluation Board

Edition 2.0
Sep. 2023

Microchip Condencer

TypeMaker

C1= 1.0pF
C2= 1.0pF

GRM1552C1H1R0BA01DGQM1884C2A1R0BB01B

muRatamuRata-4-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ Package Outline
Case Style : VU

PIN Assignments
1. VGG1
2. RF in
3. VGG2
4. VDD25. RF out
6. VDD1

Edition 2.0
Sep. 2023-5-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ 4-inch Tray Packing (Part No.: SGM6901VU)

Edition 2.0
Sep. 2023-6-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ Tape and Reel Packing(Part No.: SGM6901VUT)

Edition 2.0
Sep. 2023-7-

SGM6901VU

X-band 24W GaN-HEMT Module⚫ Mounting Method of SMD(Surface Mount Devices) for Lead-free solder
Mounting Condition(1) For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used.
(*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5%copper.)(2) A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low
halogen content is recommended.
(3) When soldering, use one of the following time / temperature methods for acceptable solder joints.
Make sure the devices have been properly prepared with flux prior soldering.
* Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow):
Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process.
Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The
recommended reflow temperature profile is shown below. The temperature of the reflow profile
must be measured at the device body surface.

Temperature (deg.C)

Reflow temperature profile and condition:

260
255
217

(4)
(2) (6)

200
(5)
150
(1)
RT

(3)

(7)
Time

(1) Preheating:(2) Ramp-up Rate:(3) Liquidus temperature and time:(4) Peak Temperature:(5) Time Peak Temperature:(6) Ramp-down Rate:(7) Time RT to peak temperature:

150 to 200 deg.C, 60 to 120 seconds
3 deg.C /seconds max
217 deg.C, 60 to 150 seconds
260 deg.C
255deg.C, 30seconds max
6 deg.C /seconds max
8 minutes max* Measurement point: Center of the package body surface(4) The above-recommended conditions were confirmed using the manufacture’s equipment andmaterials. However, when soldering these products, the soldering condition should be verified bycustomer using their equipment and materials.

Edition 2.0
Sep. 2023-8-SGM6901VU

X-band 24W GaN-HEMT ModuleFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or
chemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
be construed as a license for the use or exercise of any intellectual property right, such as patent rightor copyright, or any other right of Sumitomo Electric or any third party nor does Sumitomo Electric
warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operating
conditions.
If any products described in this document represent goods or technologies subject to certain
restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the priorauthorization of the Japanese government will be required for export of those products from Japan.

http://www.sedi.co.jp/ATTENTION
Information in this document is subject to change without notice.

Edition 2.0
Sep. 2023-9-