SGK5867-30C

C-Band Internally Matched GaN-HEMT◼ Features••••••High Output Power: P5dB=45.0dBm (Typ.)High Linear Gain: GL=15.0dB (Typ.)High Power Added Efficiency: PAE=41% (Typ.)Broad Band: 5.85 to 6.75GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package◼ Description
The SGK5867-30C is a high power GaN-HEMT that is internallymatched for standard communication bands to provide optimum
power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATING (Case Temperature T c=25 deg.C)
ItemSymbol
Drain-Source VoltageVDS
Gate-Source Voltage
VGS
Total Power Dissipation
PTRating
26UnitV-1086.5

VW

Storage Temperature

Tstg-55 to +125deg.C

Channel Temperature
Case Temperature

Tch
Tc+250-40 to +125

deg.C
deg.C

RECOMMENDED OPERATING CONDITION
Item
SymbolDrain-Source Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Channel Temperature

Condition

Limit<=24Unit
V

Rg=100ohm
Rg=100ohm<=4.4>=-2.3

mA
mA

<+193

deg.C

Tch

ELECTRICAL CHARACTERISTICS (Case Temperature T c=25 deg.C)
Item
Saturated Drain Current
Trans Conductance

SymbolCondition

IDSS

VDS=10V, VGS=0V

Pinch-off Voltage

Gm
VP

VDS=24V, IDS=0.96A
VDS=24V, IDS=0.96mA

Output Power at 5dB G.C.P.
Linear Gain at Pin=21.5dBm

P5dB
GL

Drain Current at 5dB G.C.P.
Power Added Efficiency at 3dB G.C.P.

IDSR
PAE

Gain Flatness

ΔＧ

3rd Order Inter Modulation
Distortion

IM3

Thermal Resistance

Rth

Channel Temperature Rise

ΔTch

CASE STYLE
RoHS Compliance
ESD

IBK
YES
Class 2

Edition 1.0
Sep. 2023

VDS=24V(typ.)IDS(DC)=1.75A(typ.)f=5.85 to 6.75 GHz
Vgs-constantf=6.75GHz
Δf=10MHz, 2-tone Test
Pout=29.5dBm (S.C.L.)
Channel to CaseMin.
-Limit
Typ.
8.3
2.2

Max.
-Unit
AS-2.5-4.0-5.5

V

44.0
12.5

45.0
15.0

-dBm
dB-

3.2
41

4.0
-

A%--

1.6

dB

-40.0

-42.0

-

dBc

-

2.2

2.6

deg.C/W(VDS x IDSR – Pout + Pin ) x Rth83
150
deg.C
G.C.P. : Gain Compression Point, S.C.L. : Single Carrier Level

2000V to < 4000V
Note : Based on ANSI/ESDA/JEDEC JS-001-2012(C=100pF, R=1.5kohm)-1-SGK5867-30C

C-Band Internally Matched GaN-HEMT⚫ RF Characteristics

9080

Output Power (dBm)

Total Power Dissipation (W)100706050

Note14030201000501001502002505010048904680

44704260405038403630342032300

10Power Added Efficiency (%)

Input Power vs. Output Power andPower Added Efficiency
VDS=24V, IDS(DC)=1.75A

Power Derating Curve

20 22 24 26 28 30 32 34 36 38 40

Case Temperature (deg.C)

Input Power (dBm)

Note 1: Shaded area exceeds Maximum Case
Operating Temperature (See Page1)

5.85GHz

6.3GHz6.75GHz

IMD vs. Output Power (S.C.L.)
VDS=24V, IDS(DC)=1.75A, Δf=10MHz

Output Power vs. Frequency
VDS=24V, IDS(DC)=1.75A-1046

IM3 & IM5 (dBc)

Output Power (dBm)

48

44
42
40
38
36-20-30

IM3-40IM5-50

-60
5.8

66.2

6.4

6.6

6.8

23

Frequency (GHz)21.5[dBm]
33[dBm]39[dBm]Edition 1.0
Sep. 2023

27[dBm]35[dBm]
P5dB

25

27

29

31

33

35

37

39

Output Power (S.C.L.) (dBm)

31[dBm]37[dBm]5.85GHz-2-6.3GHz

6.75GHz41

SGK5867-30CC-Band Internally Matched GaN-HEMT⚫ S-Parameter

Bias Condition VDS=24V, IDS(DC)=1.75A

Freq.

S11MAGS21ANGMAG

S12ANGMAG

S22ANG

MAG

ANG

5.65GHz

0.708

35.3

6.166

-22.2

0.060

-95.2

0.288

-77.9

5.7GHz

0.710

29.7

6.166

-28.8

0.062

-101.0

0.266

-86.4

5.85GHz

0.692

13.0

6.026

-47.8

0.067

-120.00.224-116.06.0GHz

0.653

-3.8

6.026

-66.7

0.072

-139.00.216-152.06.1GHz

0.621

-16.0

6.095

-79.4

0.076

-151.00.234-175.06.2GHz

0.578

-28.9

6.166-92.7

0.079-164.0

0.266

164.0

6.3GHz

0.528

-43.4

6.237

-106.00.082-177.0

0.309

144.0

6.4GHz

0.463

-60.4

6.310

-121.0

0.086

169.0

0.356

127.0

6.5GHz

0.393

-81.7

6.383

-136.0

0.089

154.0

0.408

109.0

6.6GHz0.324-110.06.383-152.0

0.090

138.0

0.457

91.1

6.75GHz

0.282-167.06.237-177.0

0.089

114.0

0.519

64.4

6.9GHz

0.348

140.0

5.754

158.0

0.084

89.2

0.555

37.9

6.95GHz

0.384

127.0

5.559

150.0

0.082

81.2

0.55829.2

Edition 1.0
Sep. 2023-3-

SGK5867-30C

C-Band Internally Matched GaN-HEMT⚫ Package Out line
Case Style : IBK

Edition 1.0
Sep. 2023-4-

SGK5867-30C

C-Band Internally Matched GaN-HEMTFor Safety, Observe the Following Procedures Environmental Management⚫ Do not put this product into the mouth.
⚫ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, orchemical processing as these by-products are dangerous to the human body if inhaled, ingested, orswallowed.
⚫ Respect all applicable laws of the country when discarding this product.
This product must be disposed in accordance with methods specified by applicable hazardous waste
procedures.
Any information, such as descriptions of a function and examples of application circuits, in this document
are presented solely as a reference for the purpose to show examples of operations and uses of
Sumitomo Electric semiconductor device(s); Sumitomo Electric does not warrant the proper operation of
the device(s) with respect to its use based on such information. When the user develops equipment
incorporating the device(s) based on such information, they must assume full responsibility arising outof using such information. Sumitomo Electric assumes no liability for any damages whatsoever arisingout of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not
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warrant non-infringement of any third-party’s intellectual property right or other right by using suchinformation. Sumitomo Electric assumes no liability for any infringement of the intellectual property
rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated forgeneral use, including, without limitation, ordinary industrial use, general office use, personal use, andhousehold use, but are not designed, developed and manufactured as contemplated (1) for use
accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious
effect to the public, and could lead directly to death, personal injury, severe physical damage or otherloss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, masstransport control, medical life support system, missile launch control in weapon system), or (2) for use
requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that Sumitomo Electric will not be liable to the user and/or any third party for any claims or
damages arising from the aforementioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage
or loss from such failures by incorporating safety design measures into your facility and equipment suchas redundancy, fire protection, and prevention of excessive current levels and other abnormal operating
conditions.
If any products described in this document represent goods or technologies subject to certain
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ATTENTION
Information in this document is subject to change without notice.

Edition 1.0
Sep. 2023-5-