FEDL8511-05
Issue Date: March 08, 2013

ML8511UV Sensor with Voltage Output

GENERAL DISCRIPTION
The ML8511 is a UV sensor, which is suitable for acquiring UV intensity indoors or outdoors. The ML8511 isequipped with an internal amplifier, which converts photo-current to voltage depending on the UV intensity.
This unique feature offers an easy interface to external circuits such as ADC. In the power down mode, typicalstandby current is 0.1A, thus enabling a longer battery life.

FEATURES• Photodiode sensitive to UV-A and UV-B
• Embedded operational amplifier• Analog voltage output• Low supply current (300A typ.) and low standby current (0.1A typ.)• Small and thin surface mount package (4.0mm x 3.7mm x 0.73mm, 12-pin ceramic QFN)APPLICATIONS• Smart phone, Watch, Weather station,Bicycle navigation, Accessary, Gaming

BLOCK DAIAGRAM
TP

VDD

EN

974Amplifier
8OUT

UV PhotodiodeML8511510GNDTRPIN CONFIGURATIONS
Pin7548910Symbol
VDD
GND
EN
OUT
TPTR

I/O
PW
PWI
O
I/O
I/O

1,2,3, 6,11,12

NC-Function
Supply voltage. Decouple this pin to ground with 0.1 F capacitor.
GroundActive high enable pin. (High: Active mode, Low: Standby mode)
Output (Low in power down or standby mode)
Test pin. Do not connect.
Internal reference voltage. Decouple this pin to ground with 1 nF
capacitor.
No Connection. Do not connect.

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ML8511

EXAMPLE OF CONNCTING DIAGRAM

ML8511
7

VDD
OUT

8

EN

40.1uF
5GND

ADC
PORTTR101nF* Load resistance of OUT port is recommended more than 100 k.

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ML8511

ABSOLUTE MAXIMUM RATINGS

Parameter

SymbolCondition

Ratingunit

Supply Voltage

VDD

Ta=25 C

-0.3 to +4.6

V

Input Voltage

VI

Ta=25 C

-0.3 to +4.6

V

Output Short Current

IOS

Ta=25 C

5mA

Power DissipationPD

Ta=25 C

30mW

Storage Temperature

Tstg--30 to +85

C

RECOMENTED OPERATION CONDITIONSParameter

Symbol

Min.

Typ.

Max.

unit

Operating Voltage

VDD

2.7

3.3

3.6

V

Operating Temperature

Ta-20-70

C

ELECTRO-OPTICAL CHARACTERISTICS(VDD=+2.7V to +3.6V, Ta= -20C to +70C)
Parameter

SymbolCondition

Min.

Typ.

Max.

unit

Supply Current (active mode)

IDDA

VEN=VDD-300500

A

Supply Current (standby mode)

IDDS

VEN=0-

0.11

A

Input Voltage (High level)

VIH-

VDD × 0.8-

VDD + 0.3

V

Input Voltage (Low level)

VIL

--0.2

-0.72

V

High level input current

IIH

VEN=VDD--1

A

Low level input current

IIL

VEN=0-1--

A

Wavelength of maximum sensitivity

p

Ta=25C-365-nm

Output Setup Time

TSU--1ms

Output Voltage (Shading) *VREF

0.95

1.0

1.05

V

Output Voltage (10mW/cm at p) *VO

VEN=VDD
Ta=25C,
VEN=VDD
Ta=25C,
VEN=VDD

2.08

2.22.32

V

2* Load resistance of OUT port is recommended more than 100 k.

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ML8511OUTPUT VALTAGE– UV INTENSITY CHARCTERISTICS
VDD=3.0V

3.5

Output Voltage (V)

3.0
2.5
2.075 ℃
25 ℃

1.5-5 ℃

1.0-25 ℃

0.50369122
UV Intensity (mW/cm ) @ λ365nm

15SPECTRAL RESPONSIVILITY CHARACTERISTICS
Ta=25°C, VDD=3.0VRelative Responsivity

1.0
0.8
0.6
0.4
0.2
0.0280320360400440480520560

Wavelength (nm)4/8

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ML8511

TIMING CHART
Supply voltage and EN signal state should take one of the following procedures:
1. EN should be HIGH or LOW at the same time when VDD is applied.
2. EN should be HIGH or LOW while VDD is applied.
Output should be read after output voltage level becomes stable. Maximum time required until stable output
voltage reaches is 1 millisecond after EN goes HIGH.

VDDENTSU
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ML8511

PACKAGE DIMENTIONS(Unit: mm)

Notes for Mounting the Surface Mount Type Package
The surface mount type packages are very susceptible to heat in reflow mounting and humidity absorbed instorage. Therefore, before you perform reflow mounting, contact our responsible sales person for the productname, package name, pin number, package code and desired mounting conditions (reflow method, temperatureand times).
Specifications are defined without considering the UV absorption by an external cover material.
Please contact our sales representativeus when the cover material is applied.
Do not press or rub the surface of the resin covering the top of the package where, which is on the UV-ray islight received.
In addition, do not apply pressure at high temperature.

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FEDL8511-05

ML8511REVISON HISTORY
Document No.

DatePage
PreviousCurrent
Edition
Edition

FEDL851100FC-01

Sep. 3, 2008-

FEDL8511-02

Jan. 24, 2008

FEDL8511-03

FJDL8511-04

FJDL8511-05

Preliminary edition-1

Added disclaimer--

Changed Logo OKI to OKI SEMICONDUCTOR

15213232

Changed load resistance 500 k to 100 k-3Added graphs-4

Added “TIMING CHART”

1

1Feature description is removed. Applications
section is added.

44Explanation is provided to the timing chart.

5

5Package drawing is updated.
Descriptions in the NOTE are modified.
DISCLIMER is removed.

1

1

Descriptions in Pin configurations are modified.

-2

Example of connecting diagram is added.

Nov. 7, 2008

Jan. 17, 2013

Mar. 8, 2013

Description

The following items has been moved:
PACKAGE, NOTICE, PRECAUTION andDISCLAIMER.
The following items have been moved:
BLOCK DIAGRAM and PIN CONFIGRATION
The following tables has been partially modified:
RECOMMENDED OPERATING CONDITIONSELECTRO-OPTICAL CHARACTERISTICS

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FEDL8511-05

ML8511NOTES
No copying or reproduction of this document, in part or in whole, is permitted without the consent of LAPIS
Semiconductor Co., Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing LAPIS Semiconductor's products (hereinafter"Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can beobtained from LAPIS Semiconductor upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate thestandard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, LAPIS Semiconductor shallbear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples ofapplication circuits for the Products. LAPIS Semiconductor does not grant you, explicitly or implicitly, any
license to use or exercise intellectual property or other rights held by LAPIS Semiconductor and other parties.
LAPIS Semiconductor shall bear no responsibility whatsoever for any dispute arising from the use of suchtechnical information.
The Products specified in this document are intended to be used with general-use electronic equipment ordevices (such as audio visual equipment, office-automation equipment, communication devices, electronic
appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While LAPIS Semiconductor always makes efforts to enhance the quality and reliability of its Products, aProduct may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against thepossibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such asderating, redundancy, fire control and fail-safe designs. LAPIS Semiconductor shall bear no responsibilitywhatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction
manual.
The Products are not designed or manufactured to be used with any equipment, device or system which requires
an extremely high level of reliability the failure or malfunction of which may result in a direct threat to humanlife or create a risk of human injury (such as a medical instrument, transportation equipment, aerospacemachinery, nuclear-reactor controller, fuel-controller or other safety device). LAPIS Semiconductor shall bear noresponsibility in any way for use of any of the Products for the above special purposes. If a Product is intended
to be used for any such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under
the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under theLaw.
Copyright

2008 - 2013 LAPIS Semiconductor Co., Ltd.

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