マテリアル先端リサーチインフラ利用報告書
ARIM User's Report【Release：2024.08.20】【Update：2024.06.20】

課題データ / Project Data
課題番号Project Issue Number
利用課題名
Title

22KT1252
Fabrication and electro-mechanical study of nano-scale resonators

利用した実施機関
Support Institute京都大学 / Kyoto Univ.

機関外・機関内の利用
External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

横断技術領域
Cross-Technology Area

加工・デバイスプロセス/Nanofabrication

重要技術領域
Important Technology
Area

マルチマテリアル化技術・次世代高分子マテリアル/Multi-material technologies /Next-generation high-molecular materials
高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level
device functions to be performedキーワード
Keywords

Resonator, Nanomechanical engineering,リソグラフィ/Lithography,EB,3D積層技術/ 3D lamination technology

利用者と利用形態 / User and Support Type
利用者名（課題申請者）
User Name (ProjectApplicant)
所属名
Affiliation

Banerjee Amit

京都大学 大学院工学研究科

共同利用者氏名Names of Collaborators
in Other Institutes Than
Hub and Spoke Institutes
ARIM実施機関支援担当者
Names of Collaboratorsin The Hub and SpokeInstitutes
利用形態
Support Type

江崎裕子

機器利用/Equipment Utilization,技術補助/Technical Assistance

利用した主な設備 / Equipment Used in This Project
利用した主な設備
Equipment ID & Name

KT-117：超臨界洗浄・乾燥装置

報告書データ / Report

概要（目的・用途・実施内容）
Abstract (Aim, UseApplications andContents)

In this research, our goal is to fabricate nanoscale resonator devices of Si tostudy their dynamic behavior, Q-factor, etc. for developing ultrasensitive gassensors. This research is done together with Wei Yu, Yuma Ohara and Tsubasa
Suzuki. Each of their individual research and reports are separately provided. I
provide mentorship to their efforts regarding concepts and designs of devices,fabrication process and optimizing process conditions. As far as my personaluse of equipment in this issue, I used the critical point dryer to dry a fewnanoresonator chips after acetone cleaning. Details of that experiment isprovided below. For further detail about this research and achievements, I referto the reports of the aforementioned student members of the project.

実験
Experimental

We fabricate our nanoresonator devices from SOI wafers using UV and electron
beam lithography, DRIE process and vapor HF etching. In some of our devices,
due to over-etching in DRIE step, nanobeams were detached from the oxide
layer. In the next step, when some of the chips were diced and protective
photoresist layer was removed by acetone, nanobeams were damaged duringdrying. To overcome this issue, I used critical point drying (KT-117:
Supercritical Rinser & Dryer) to dry the remaining chips after 15 minutes
acetone cleaning.

結果と考察
Results and Discussion

Chips were inspected under an optical microscope before and after the criticalpoints drying process as shown in Fig. 1(a) and Fig. 1(b), respectively. In Fig.
1(a), photoresist (OFPR) coating is visible on the chip. Fig. 1(b) shows a chip
after resist removal and drying process with intact nanobeams, indicating thatthe beams were successfully rescued.

図・表・数式 1
Figures, Tables andEquations 1Fig.1: Optical images of devices (a) before and (b) after critical point drying.
その他・特記事項（参考文献・謝辞等）
Remarks(References andAcknowledgements)

成果発表・成果利用 / Publication and Patents
DOI（論文・プロシーディング）
DOI (Publication andProceedings)
口頭発表、ポスター発表
および、その他の論文[1]Oral Presentations etc.
特許出願件数
Number of PatentApplications

2022 JSME-IIP/ASME-ISPS Joint Conference on Micromechatronics forInformation and Precision Equipment, Nagoya, Aug 20220件

特許登録件数
Number of RegisteredPatents

0件