RCX330N25
Nch 250V 33A Power MOSFET

DatasheetlOutline

VDSS

250V

RDS(on) (Max.)

105mW

ID33APD

40W

lFeatures

TO-220FM(1) (2)(3)

lInner circuit

1) Low on-resistance.
2) Fast switching speed.

(1) Gate(2) Drain(3) Source3) Drive circuits can be simple.
4) Parallel use is easy.

*1 BODY DIODE

5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested

lPackaging specifications
Packaging

Bulk

Reel size (mm)-Tape width (mm)-Automotive Motor Drive

Basic ordering unit (pcs)

500

Automotive Solenoid Drive

Taping code-lApplication
Switching Power Supply

TypeMarking

RCX330N25lAbsolute maximum ratings (Ta = 25°C)
Parameter

SymbolValue

UnitVDSS

250V

Tc = 25C

ID *1

33

A

Tc = 100C

ID *1

17.9

A

Pulsed drain current

ID,pulse *2

132

A

Gate - Source voltage

VGSS

30

V

Avalanche energy, single pulse

EAS *374.8mJ

Avalanche current

IAR *3

16.5

A

Tc = 25CPD40

W

Ta = 25CPD

2.23

W

Junction temperature

Tj150°C

Range of storage temperature

Tstg-55 to +150°CDrain - Source voltage
Continuous drain current

Power dissipationwww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

1/12

2013.04 - Rev.A

Data Sheet

RCX330N25
lThermal resistanceParameter

SymbolValues
Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

RthJC

--

3.13°C/W

Thermal resistance, junction - ambient

RthJA--56°C/W

Soldering temperature, wavesoldering for 10s

Tsold--265°C

lElectrical characteristics (Ta = 25°C)
Parameter

SymbolDrain - Source breakdown voltage

V(BR)DSS

Conditions
VGS = 0V, ID = 1mAVDS = 250V, VGS = 0V

Values

Unit

Min.

Typ.

Max.

250--V--10mA

Zero gate voltage
drain current

IDSS

Gate - Source leakage current

IGSS

VGS = 30V, VDS = 0V--

100nA

Gate threshold voltage

VGS (th)VDS = 10V, ID = 1mA

3.0-

5.0

V

VGS = 10V, ID = 16.5A-77105-165

230

1020-

Static drain - sourceon - state resistanceRDS(on)Tj = 25°C*4

VGS = 10V, ID = 16.5A
Tj = 125°C

Forward transfer admittancewww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

gfs

VDS = 10V, ID = 16.5A

2/12mWS

2013.04 - Rev.A

Data Sheet

RCX330N25
lElectrical characteristics (Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Input capacitanceCiss

VGS = 0V

-4500-

Output capacitanceCoss

VDS = 25V

-

220

-

Reverse transfer capacitance

Crssf = 1MHz

-

130

-

Turn - on delay timetd(on) *4

VDD ⋍ 125V, VGS = 10V-50-

Rise timetr *4

ID = 16.5A-200-

Turn - off delay timetd(off) *4

RL = 7.6W-120-

Fall time

tf *4

RG = 10W-140-

UnitpF

nslGate Charge characteristics (Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Total gate charge

Qg *4

VDD ⋍ 125V

-80-

Gate - Source charge

Qgs *4ID = 33A-25-

Gate - Drain charge

Qgd

VGS = 10V-27-

Gate plateau voltage

V(plateau)

VDD ⋍ 125V, ID = 33A

-

6.6-

*4

UnitnCV

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter

SymbolConditions

Values

Unit

Min.

Typ.

Max.

--33

A--132

A

Continuous source current

IS *1Pulsed source current

ISM *2

Forward voltage

VSD *4

VGS = 0V, IS = 33A

--1.5

V

Reverse recovery timetrr *4-145-

ns

Reverse recovery charge

Qrr *4

IS = 16.5A
di/dt = 100A/ms-670-nC

Tc = 25°C*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Pulsed

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

3/12

2013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

1000
PW = 100ms

100100Drain Current : ID [A]Power Dissipation : PD/PD max. [%]120806040Operation in thisarea is limited
by RDS(on)1

PW = 10ms

Ta=25ºCSingle Pulse
02550

75

100

125

1500.011750.11101001000

Drain - Source Voltage : VDS [V]Junction Temperature : Tj [°C]

Normalized Transient Thermal Resistance : r(t)100.1

200PW = 1ms

Fig.3 Normalized Transient ThermalResistance vs. Pulse Width10Ta = 25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)Rth(j-c) = 56ºC/W
10.1

0.01
0.0001

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single0.01

1100Pulse Width : PW [s]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

4/12

2013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

Fig.5 Avalanche Energy Derating Curvevs Junction Temperature

Fig.4 Avalanche Current vs Inductive LoadAvalanche Energy : EAS / EAS max. [%]Avalanche Current : IAS [A]100
VDD=50V,RG=25W
VGF=10V,VGR=0V
Starting Tch=25ºC1010.010.11101001201008060402000Coil Inductance : L [mH]

VGS=6.5V2

VGS=6.0V

10

VGS=5.0V

00.2

0.4

0.6

VGS=5.5V

0.8

150

175

VGS=8.0V
20
VGS=7.0V

15
10
VGS=6.0V

501

VGS=6.5V
VGS=5.5V

0246810

Drain - Source Voltage : VDS [V]Drain - Source Voltage : VDS [V]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

125

Ta=25ºC
Pulsed

VGS=10.0V

25

VGS=7.0V

3100

30

Drain Current : ID [A]Drain Current : ID [A]475

Fig.7 Typical Output Characteristics(II)VGS=10.0V
VGS=8.0V

Ta=25ºCPulsed

50Junction Temperature : Tj [°C]

Fig.6 Typical Output Characteristics(I)5255/122013.04 - Rev.A

Data Sheet

RCX330N25

Fig.8 Breakdown Voltage
vs. Junction Temperature

Fig.9 Typical Transfer Characteristics

340

100
VDS= 10V

VGS = 0V
ID = 1mA

320

10Drain Current : ID [A]Normarize Drain - Source Breakdown Voltage: V(BR)DSS [V]lElectrical characteristic curves

300
2802600.1

Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC0.01

2402201-500501000.001

1500Junction Temperature : Tj [°C]Fig.10 Gate Threshold Voltage
vs. Junction Temperature

810Fig.11 Transconductance vs. Drain Current

VDS= 10V

VDS = 10V
ID = 1mATransconductance : gfs [S]Gate Threshold Voltage : VGS(th) [V]

6100

4.0
3.5
3.0
2.5
2.0

4Gate - Source Voltage : VGS [V]

5.0
4.5

2-50 -2502550751
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC

0.10.010.01

100 125 150

Junction Temperature : Tj [°C]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

100.1

110100Drain Current : ID [A]

6/12

2013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

300
Ta=25ºC
250
200
ID = 33A

150

ID = 16.5A

100
50005

101520

Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Gate - Source Voltage : VGS [V]1000
Ta=25ºC
VGS = 10V
1001010.010.1

110100Drain Current : ID [A]Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.14 Static Drain - Source On - StateResistance vs. Junction Temperature
200175

VGS = 10V
ID = 16.5A

150
1251007550250-50 -250255075

100 125 150

Junction Temperature : Tj [ºC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

7/12

2013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

Fig.16 Drain Current Derating Curve

1000120
VGS= 10V

Drain Current Dissipation: ID/ID max. (%)

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.15 Static Drain - Source On - StateResistance vs. Drain Current(I)100

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

1010.01

0.1

11080
60
40
200100

02550

75

100

125150175Junction Temperature : Tj [ºC]

Drain Current : ID [A]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

1008/122013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

Fig.17 Typical Capacitancevs. Drain - Source Voltage

Fig.18 Switching Characteristics

10000

10000

Switching Time : t [ns]Capacitance : C [pF]

Ciss
1000

Coss10010Crss

Ta = 25ºC
f = 1MHz
VGS = 0V
0.01

0.1

Ta=25ºC
VDD= 125V
VGS= 10V
RG=10Wtf
1000

td(off)100td(on)

tr1

10100

101000Drain - Source Voltage : VDS [V]

0.01

0.1

110100Drain Current : ID [A]Fig.19 Dynamic Input Characteristics

Gate - Source Voltage : VGS [V]20
Ta=25ºC
VDD= 125V
ID= 33A
RG=10W

151050050100

150200Total Gate Charge : Qg [nC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

9/12

2013.04 - Rev.A

Data Sheet

RCX330N25lElectrical characteristic curves

Fig21 Reverse Recovery Timevs.Source Current

Fig.20 Source Current
vs. Source - Drain Voltage

1000

100Reverse Recovery Time : trr [ns]Source Current : IS [A]

VGS=0V10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

10.1

0.01

0.00.5

Ta=25ºC
di / dt = 100A / ms
VGS = 0V
101.00.1

110100Source Current : IS [A]Source-Drain Voltage : VSD [V]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

10010/12

2013.04 - Rev.A

Data Sheet

RCX330N25
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit

Fig.3-2 Avalanche Waveform

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

11/12

2013.04 - Rev.A

Data Sheet

RCX330N25
lDimensions (Unit : mm)
DTO-220FMEA

E1A1AA2A4F

φpb1

LQcebDIMA
A1A2A4bb1c
DE
eE1F
L
pQ
xx

A

MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.381

INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.39
0.173

MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.10

0.106
0.11
0.453
0.118
0.083
-0.118
0.126
0.492
0.134
0.1220.015

Dimension in mm/incheswww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

12/12

2013.04 - Rev.A

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated inthis document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
12) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact aROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws andregulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System
http://www.rohm.com/contact/

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

R1102A