RUL035N02

Nch 20V 3.5A Power MOSFETDatasheet
lOutline

VDSS

20V

RDS(on) (Max.)

43mW

ID

3.5A

PD

1.0W

(6)

TUMT6

(5)

SOT-363T

(4)

(1)
(2)
(3)

lInner circuit

lFeatures
1) Low on - resistance.

(1) Drain(2) Drain(3) Gate(4) Source(5) Drain(6) Drain

2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).

*1 ESD PROTECTION DIODE*2 BODY DIODE

5) Pb-free lead plating ; RoHS compliant

lPackaging specifications
PackaginglApplication
DC/DC converters

TypeTaping

Reel size (mm)180

Tape width (mm)8Basic ordering unit (pcs)

3,000

Taping code

TRMarking

XD

lAbsolute maximum ratings(Ta = 25°C)
Parameter

SymbolValue

Unit

Drain - Source voltage

VDSS

20V

Continuous drain current

ID *1

3.5

A

Pulsed drain current

ID,pulse *2

7A

Gate - Source voltage

VGSS

10V

PD *3

1.0

W

PD *40.32

W

Junction temperature

Tj150°C

Range of storage temperature

Tstg-55 to +150°C

Power dissipationwww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

1/112013.02 - Rev.B

Data Sheet

RUL035N02
lThermal resistanceParameter

SymbolThermal resistance, junction - ambient

Values

Unit

Min.

Typ.

Max.

RthJA *3--125°C/W

RthJA *4--391°C/W

lElectrical characteristics(Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Unit

Drain - Source breakdown
voltage

V(BR)DSSVGS = 0V, ID = 1mA

20--V

Breakdown voltage
temperature coefficient

ΔV(BR)DSS ID=1mA
ΔTj
referenced to 25°C

-20-mV/°C

Zero gate voltage drain current

IDSS

VDS = 20V, VGS = 0V--1mA

Gate - Source leakage current

IGSS

VGS = 10V, VDS = 0V--10mA

Gate threshold voltage

VGS (th)VDS = 10V, ID = 1mA

0.3-1.0V

Gate threshold voltage
temperature coefficientΔV(GS)thΔTj

ID=1mA
referenced to 25°C--1.9-mV/°C

VGS=4.5V, ID=3.5A-3143

VGS=2.5V, ID=3.5A-3853

RDS(on) *5 VGS=1.8V, ID=1.8A

-50

70

VGS=1.5V, ID=0.7A

-66

93

VGS=4.5V, ID=3.5A, Tj=125°C-5680

Static drain - sourceon - state resistancemW

Gate input resistannceRG

f = 1MHz, open drain-7.5-WTransconductancegfs *5

VDS=10V, ID=3.5A

3.28.5-S*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Mounted on a seramic board (30×30×0.8mm)*4 Mounted on a FR4 (15×20×0.8mm)*5 Pulsed

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

2/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lElectrical characteristics(Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Input capacitanceCiss

VGS = 0V-460-

Output capacitance

CossVDS = 10V-110-

Reverse transfer capacitance

Crssf = 1MHz-60-

Turn - on delay timetd(on) *5

VDD ⋍ 10V, VGS = 4.5V

-10-

Rise timetr *5

ID = 1.8A-

20-

Turn - off delay timetd(off) *5

RL = 5.6W-40-

Fall time

tf *5

RG = 10W-50-

UnitpF

nslGate Charge characteristics(Ta = 25°C)
Parameter

SymbolTotal gate charge

Qg *5

Gate - Source charge

Qgs *5Gate - Drain charge

Qgd*5Conditions

VDD ⋍ 10, ID=3.5A
VGS = 4.5V

Values
Min.

Typ.

Max.

-

5.7

--

1.1

--0.9

-

UnitnClBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Unit

Inverse diode continuous,
forward current

IS *1

Ta = 25°C

--0.8

A

Forward voltage

VSD *5

VGS = 0V, Is = 0.8A

--1.2

V

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

3/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

100100Operation in this area
is limited by RDS(on)( VGS = 10V ）806040200050100150

PW = 1ms

1
DC Operation

0.1

0.01200

PW = 10ms

Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

0.1110100Drain - Source Voltage : VDS [V]Junction Temperature : Tj [°C]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Fig.4 Single Pulse Maxmum Powerdissipation
1000

10Ta=25ºC
Single Pulse

Ta=25ºC
Single Pulse

1topD=1
D=0.5
D=0.1
D=0.05
D=0.01bottom Signle

0.1

0.01

0.001
0.0001Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board(30mm × 30mm × 0.8mm)

0.01

1

Peak Transient Power : P(W)

Normalized Transient Thermal Resistance : r(t)PW = 100ms

10Drain Current : ID [A]Power Dissipation : PD/PD max. [%]12010

10.0001

100

Pulse Width : PW [s]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

1000.01

1100

Pulse Width : PW [s]4/11

2013.02 - Rev.BData Sheet

RUL035N02
lElectrical characteristic curves

Fig.6 Typical Output Characteristics(II)Fig.5 Typical Output Characteristics(I)Ta=25ºCPulsed

3

VGS=4.5V

VGS=4.5V
VGS=2.5V

3

VGS=1.8V

VGS=1.8V

Drain Current : ID [A]Drain Current : ID [A]VGS=2.5V

2
VGS=1.5V
1
VGS=1.3V

00.2

0.4

0.6

0.8

VGS=1.3V
1

VGS=1.2V
VGS=1.1V

010246810

Drain - Source Voltage : VDS [V]Drain - Source Voltage : VDS [V]Fig.8 Typical Transfer Characteristics

Fig.7 Breakdown Voltage
vs. Junction Temperature60
VGS = 0V
ID = 1mApulsed
40

Drain Current : ID [A]Drain - Source Breakdown Voltage : V(BR)DSS [V]VGS=1.5V

2VGS=1.1V
0Ta=25ºC
Pulsed200-50050100

150

Junction Temperature : Tj [°C]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

Gate - Source Voltage : VGS [V]5/11

2013.02 - Rev.B

Data Sheet

RUL035N02

Fig.9 Gate Threshold Voltage
vs. Junction Temperature

Fig.10 Transconductance vs. Drain Current

2100VDS = 10V
ID = 1mApulsed

Transconductance : gfs [S]Gate Threshold Voltage : VGS(th) [V]lElectrical characteristic curves

10-50050100

VDS= 10VPulsed

1010.10.01150Junction Temperature : Tj [°C]

Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC

0.1

110Drain Current : ID [A]Fig.11 Drain CurrentDerating Curve

Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Drain Current Dissipation: ID/ID max. (%)

10.8
0.6
0.4
0.20-250255075100

125150Gate - Source Voltage : VGS [V]Junction Temperature : Tj [ºC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

0

Static Drain - Source On-State Resistance: RDS(on) [mW]

1.2

6/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lElectrical characteristic curves

Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)Fig.14 Static Drain - Source On - StateResistance vs. Junction Temperature

Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]60

Drain Current : ID [A]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

50403020
VGS = 10V
ID=3.5Apulsed

100-50 -25

0255075

100 125 150

Junction Temperature : Tj [ºC]7/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lElectrical characteristic curves

Fig.16 Static Drain-Source On-StateResistance vs. Drain Current(III)

Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)Drain Current : ID [A]Drain Current : ID [A]Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(V)Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)Drain Current : ID [A]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

Drain Current : ID [A]

8/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lElectrical characteristic curves

Fig.20 Switching Characteristics

Capacitance : C [pF]

Switching Time : t [ns]Fig.19 Typical Capacitancevs. Drain - Source Voltage

Drain Current : ID [A]Fig.21 Dynamic Input Characteristics

Fig.22 Source Current
vs. Source Drain Voltage

Source Current : IS [A]Gate - Source Voltage : VGS [V]Drain - Source Voltage : VDS [V]Source-Drain Voltage : VSD [V]Total Gate Charge : Qg [nC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

9/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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10/11

2013.02 - Rev.B

Data Sheet

RUL035N02
lDimensions (Unit : mm)
DTUMT6Ax

S A

LpHEE

Lebc

e1
A

A2e

A1

l1y S
Sb2

Patterm of terminal position areas

DIM
A
A1
A2bc
DEeHE
L
Lpxy
DIM
e1b2
l1

MILIMETERS
MIN
MAX
0.85
0.00
0.10
0.72
0.82
0.25
0.40
0.12
0.22
1.90
2.10
1.60
1.80
0.65
2.00
2.20
0.20
0.40
0.10
0.10
MILIMETERS
MIN
MAX
1.70
0.50
0.50

INCHESMIN00.028
0.01
0.005
0.075
0.063

MAX
0.033
0.004
0.032
0.016
0.009
0.083
0.071
0.03

0.079

0.087
0.01-0.016
0.004
0.004
INCHESMIN

MAX
0.067

-0.02
0.02

Dimension in mm/incheswww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

11/11

2013.02 - Rev.B

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
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cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
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shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
12) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A