Data Sheet

4V Drive Nch MOSFET
RXH090N03
 Structure
Silicon N-channel MOSFET Dimensions (Unit : mm)
SOP8Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).

(8)

(5)

(1)

(4)

 Application
Switching Packaging specifications
Package
TypeCode
Quantity (pcs)
RXH090N03

 Inner circuit
Taping
TB
2500


(8)

 Absolute maximum ratings (Ta = 25C)
SymbolParameter
Drain-source voltage

VDSS

Gate-source voltage
Drain current
Source current(Body Diode)

Continuous
PulsedContinuousPulsed

VGSSID
IDPIS*1Limits

Unit

30
20
9VVA

36
1.636AAAPower dissipation

ISPPD

2.0W

Channel temperature
Range of storage temperature

TchTstg

150
55 to 150

CC Thermal resistanceParameter

SymbolLimitsUnit

Channel to Ambient

Rth (ch-a)*62.5

C / W*1*2(1) Source(2) Source(3) Source(4) Gate(5) Drain(6) Drain(7) Drain(8) Drain

(7)

(6)

(5)

(3)

(4)

∗2

∗1(1)

(2)

∗1 ESD PROTECTION DIODE∗2 BODY DIODE*1 Pw10s, Duty cycle1%*2 Mounted on a ceramic board.

*Mounted on a ceramic board.

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2019.05 - Rev.B

Data Sheet

RXH090N03
 Electrical characteristics (Ta = 25C)
Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

--

10

A

VGS=20V, VDS=0V

Drain-source breakdown voltage V(BR)DSS

30

--

V

ID=1mA, V GS=0V

Zero gate voltage drain current

IDSS--1

A

VDS=30V, VGS=0V

Gate threshold voltage

VGS (th)

1.0-

2.5

V-

1217

ID=9A, VGS=10Vm ID=9A, VGS=4.5V

Gate-source leakage

IGSS

VDS=10V, ID=1mA

Static drain-source on-stateresistance*RDS (on)-1724-

1927

Forward transfer admittancel Yfs l*5.0--S

ID=9A, VDS=10V

Input capacitance

Ciss-

440-

pF

VDS=10V

Output capacitance

Coss-

170-

pF

VGS=0V

Reverse transfer capacitance

Crss-

85-

pF

f=1MHz

ID=9A, VGS=4.0V

Turn-on delay timetd(on)*-8-ns

ID=4.5A, VDD 15V

Rise timetr *-30-

ns

VGS=10V

Turn-off delay timetd(off)*-30-ns

RL=3.32

Fall timetf *-8-ns

RG=10

Total gate charge

Qg *-6.8-nC

ID=9A, VDD 15V

Gate-source charge

Qgs *Qgd *1.62.6-nCnC

VGS=5V

Gate-drain charge-*PulsedBody diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage

Symbol
VSD *

Min.

Typ.

Max.

Unit

Conditions--

1.2

V

Is=9A, VGS=0V*Pulsedwww.rohm.com© 2011 ROHM Co., Ltd. All rights reserved.

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2019.05 - Rev.B

Data Sheet

RXH090N03
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)

Fig.2 Typical Output Characteristics(Ⅱ)
99

VGS= 2.8V

VGS= 2.8V

8DRAIN CURRENT : ID[A]DRAIN CURRENT : ID[A]76
VGS= 10V
VGS= 4.5V
VGS= 4.0V

54

VGS= 2.5V

37
VGS= 10V
VGS= 4.5V
VGS= 4.0V

6543
22
Ta=25°C
Pulsed1

Ta=25°C
Pulsed

1000

0.2

0.4

0.6

0.801

468

DRAIN-SOURCE VOLTAGE : VDS[V]Fig.3 Typical Transfer Characteristics

Fig.4 Static Drain-Source On-StateResistance vs. Drain Current(Ⅰ)

101000STATIC DRAIN-SOURCE ON-STATERESISTANCE : RDS(on)[mΩ]VDS= 10V
PulsedDRAIN CURRENT : ID[A]2DRAIN-SOURCE VOLTAGE : VDS[V]101
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1

0.01

Ta=25°C
Pulsed100

10VGS= 4.0V
VGS= 4.5V
VGS= 10V
10.001
01

20.1

3110

GATE-SOURCE VOLTAGE : VGS[V]DRAIN-CURRENT : ID[A]Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-StateResistance vs. Drain Current(Ⅲ)

1000

1000
VGS= 10VPulsed

STATIC DRAIN-SOURCE ON-STATERESISTANCE : RDS(on)[mΩ]STATIC DRAIN-SOURCE ON-STATERESISTANCE : RDS(on)[mΩ]

VGS= 2.5V

8

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

100101

VGS= 4.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

100

1010.11100.1DRAIN-CURRENT : ID[A]www.rohm.com© 2011 ROHM Co., Ltd. All rights reserved.

110DRAIN-CURRENT : ID[A]3/6

2019.05 - Rev.B

Data Sheet

RXH090N03Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

Fig.8 Forward Transfer Admittancevs. Drain Current

STATIC DRAIN-SOURCE ON-STATERESISTANCE : RDS(on)[mΩ]

VGS= 4.0V
PulsedFORWARD TRANSFER ADMITTANCE : |Yfs| [S]1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

100

1010.1

1

VDS= 10V
Pulsed101Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.1
0.01

100.1

10

DRAIN-CURRENT : ID[A]Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
STATIC DRAIN-SOURCE ON-STATERESISTANCE : RDS(ON)[mΩ]

VGS=0V
Pulsed1

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.1

0.01

Ta=25°C
PulsedID= 4.5A

40

ID= 9.0A
302010000.5

11.502SOURCE-DRAIN VOLTAGE : VSD [V]46810GATE-SOURCE VOLTAGE : VGS[V]Fig.11 Switching Characteristics

Fig.12 Dynamic Input Characteristics
101000tf
100

GATE-SOURCE VOLTAGE : VGS [V]Ta=25°C
VDD= 15V
VGS=10V
RG=10W
Pulsedtd(off)

SWITCHING TIME : t [ns]1DRAIN-CURRENT : ID[A]

10SOURCE CURRENT : Is [A]

100td(on)10864Ta=25°C
VDD= 15V
ID= 9A
Pulsed2tr010.01

0.11010

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2468101214TOTAL GATE CHARGE : Qg [nC]

DRAIN-CURRENT : ID[A]4/6

2019.05 - Rev.B

Data Sheet

RXH090N03

Fig.13 Typical Capacitancevs. Drain-Source Voltage

Fig.14 Maximum Safe Operating Aera

10000

1000
Operation in this area is limited by RDS(ON)(VGS=10V)
DRAIN CURRENT : ID [A]

CAPACITANCE : C [pF]

100Ciss1000

Crss100
CossPW =100us10PW =1ms1

PW = 10msTa=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

0.1

Ta=25°C
f=1MHz
VGS=0V
10DC operation

0.01
0.01

0.1

1

101000.1

110100DRAIN-SOURCE VOLTAGE : VDS[V]DRAIN-SOURCE VOLTAGE : VDS[V]Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

NORMARIZED TRANSIENT THERMALRESISTANCE : r (t)10

Ta=25°C
Single Pulse
10.1

0.01

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)

0.001
0.0001

0.001

0.01

0.1

1101001000

PULSE WIDTH : Pw(s)www.rohm.com© 2011 ROHM Co., Ltd. All rights reserved.

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2019.05 - Rev.B

Data Sheet

RXH090N03
 Measurement circuits
Pulse width

VGSID

VDS

90%

50%
10%

VGS
VDS

RL

50%

10%

D.U.T.
VDD

RG

10%

90%
td(on)
ton

Fig.1-1 Switching Time Measurement Circuit

90%td(off)

trtf
toff

Fig.1-2 Switching Waveforms
VG

VGSID

VDS

Qg

RL
IG(Const.)

VGS

D.U.T.

Qgs

Qgd

VDD

ChargeFig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform NoticeThis product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

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