RCX120N25
Nch 250V 12A Power MOSFET

DatasheetlOutline

VDSS

250V

RDS(on) (Max.)

235mW

ID

12APD

40W

lFeatures

TO-220FM(1) (2)(3)

lInner circuit

1) Low on-resistance.
2) Fast switching speed.

(1) Gate(2) Drain(3) Source3) Drive circuits can be simple.
4) Parallel use is easy.

*1 BODY DIODE

5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested

lPackaging specifications
Packaging

Bulk

Reel size (mm)-Tape width (mm)-Automotive Motor Drive

Basic ordering unit (pcs)

500

Automotive Solenoid Drive

Taping code-lApplication
Switching Power Supply

TypeMarking

RCX120N25lAbsolute maximum ratings (Ta = 25°C)
Parameter

SymbolValue

UnitVDSS250V

Tc = 25C

ID *1

12A

Tc = 100C

ID *1

6.5

A

Pulsed drain current

ID,pulse *2

48

AGate - Source voltage

VGSS

30

V

Avalanche energy, single pulse

EAS *310.5mJ

Avalanche current

IAR *3

6.0

A

Tc = 25CPD

40W

Ta = 25CPD

2.23

W

Junction temperature

Tj150°C

Range of storage temperature

Tstg-55 to +150°CDrain - Source voltage
Continuous drain current

Power dissipationwww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

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2013.02 - Rev.A

Data Sheet

RCX120N25
lThermal resistanceParameter

SymbolValues
Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

RthJC

--

3.125°C/W

Thermal resistance, junction - ambient

RthJA--56°C/W

Soldering temperature, wavesoldering for 10s

Tsold--265°C

lElectrical characteristics (Ta = 25°C)
Parameter

SymbolDrain - Source breakdown voltage

V(BR)DSS

Conditions
VGS = 0V, ID = 1mAVDS = 250V, VGS = 0V

Zero gate voltage
drain current

IDSS

Tj = 25°C
VDS = 250V, VGS = 0V
Tj = 125°C

Values
Min.

Typ.

Max.

250----

10UnitVmA--

100

Gate - Source leakage current

IGSS

VGS = 30V, VDS = 0V

--

100

nA

Gate threshold voltage

VGS (th)VDS = 10V, ID = 1mA

3.0-

5.0

V

VGS = 10V, ID = 6.0A

-180235-

340

480

3.25

6.50

-

Static drain - sourceon - state resistanceRDS(on) *4 VGS = 10V, ID = 6.0A
Tj = 125°C

Forward transfer admittancewww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

gfs

VDS = 10V, ID = 6.0A

2/12mWS

2013.02 - Rev.A

Data Sheet

RCX120N25lElectrical characteristics (Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Input capacitanceCiss

VGS = 0V

-

1800

-

Output capacitanceCoss

VDS = 25V

-100-

Reverse transfer capacitance

Crssf = 1MHz

-60-

Turn - on delay timetd(on) *4

VDD ⋍ 125V, VGS = 10V-33-

Rise timetr *4

ID = 6.0A-65-

Turn - off delay timetd(off) *4

RL = 20.83W-45-

Fall time

tf *4

RG = 10W-20-

UnitpFnslGate Charge characteristics (Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Total gate charge

Qg *4

VDD ⋍ 125V

-35-

Gate - Source charge

Qgs *4ID = 12A-

15-

Gate - Drain charge

Qgd

VGS = 10V-12-

Gate plateau voltage

V(plateau)

VDD ⋍ 125V, ID = 12A

-

7.6-

*4

UnitnCV

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter

SymbolConditions

Values

Unit

Min.

Typ.

Max.

--12A--48

A

Continuous source current

IS *1Pulsed source current

ISM *2Forward voltage

VSD *4

VGS = 0V, IS = 12A

--

1.5

V

Reverse recovery time

trr *4-

105

-

ns

Reverse recovery charge

Qrr *4

IS = 6.0A
di/dt = 100A/ms

-

410

-

nC

Tc = 25°C*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Pulsed

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

3/122013.02 - Rev.A

Data Sheet

RCX120N25lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve100

PW = 1ms

806040101Operation in thisarea is limited
by RDS(on)0.1

20002550

75

100

1251500.01

175

PW = 10ms

Ta=25ºCSingle Pulse
0.1

1101001000

Drain - Source Voltage : VDS [V]Junction Temperature : Tj [°C]

Normalized Transient Thermal Resistance : r(t)PW = 100ms

100Drain Current : ID [A]Power Dissipation : PD/PD max. [%]120Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width10

Ta = 25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)Rth(j-c) = 56ºC/W

10.1

0.01
0.0001 0.001 0.01

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single

0.1

1

10

1001000Pulse Width : PW [s]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

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Data Sheet

RCX120N25lElectrical characteristic curves

Fig.5 Avalanche Energy Derating Curvevs Junction Temperature

Fig.4 Avalanche Current vs Inductive Load
Avalanche Energy : EAS / EAS max. [%]Avalanche Current : IAS [A]100
VDD=50V,RG=25W
VGF=10V,VGR=0VStarting Tch=25ºC1010.10.010.1

1101001201008060402000Coil Inductance : L [mH]75100

125150175Fig.7 Typical Output Characteristics(II)612VGS=8.0V

4

VGS=7.0V
2
VGS=6.5V
VGS=5.5V
00.2

0.4

0.6

0.8

86401

VGS=7.0V
VGS=6.5V
VGS=5.5V VGS=6.0V
0246810Drain - Source Voltage : VDS [V]Drain - Source Voltage : VDS [V]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

VGS=8.0V

2

VGS=6.0V

Ta=25ºCPulsed

VGS=10.0V

10VGS=10.0V

Drain Current : ID [A]Ta=25ºC
PulsedDrain Current : ID [A]50

Junction Temperature : Tj [°C]

Fig.6 Typical Output Characteristics(I)0255/122013.02 - Rev.A

Data Sheet

RCX120N25

Fig.8 Breakdown Voltage
vs. Junction Temperature

Fig.9 Typical Transfer Characteristics

340100320

VDS= 10V

VGS = 0V
ID = 1mA

10Drain Current : ID [A]Normarize Drain - Source Breakdown Voltage: V(BR)DSS [V]lElectrical characteristic curves

300
2802600.1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC

0.01

2402201-50 -2502550750.001

100 125 1500Junction Temperature : Tj [°C]Fig.10 Gate Threshold Voltage
vs. Junction Temperature

6810Fig.11 Transconductance vs. Drain Current
100VDS = 10V
ID = 1mA
4.5

4.0

3.5-50 -250255075

VDS= 10V

Transconductance : gfs [S]Gate Threshold Voltage : VGS(th) [V]

4Gate - Source Voltage : VGS [V]

5.0

3.021
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC

0.1

0.01
0.01

100 125 150

Junction Temperature : Tj [°C]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

100.1

110100Drain Current : ID [A]

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Data Sheet

RCX120N25lElectrical characteristic curves

10000

500
Ta=25ºC
400

ID = 6A300

ID = 12A

200

1000Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)05101520

Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage

Gate - Source Voltage : VGS [V]Ta=25ºC

1000

VGS = 10V

100100.1

110100Drain Current : ID [A]Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
500400VGS = 10V
ID = 12A

300

200

1000-50 -250255075100 125 150Junction Temperature : Tj [ºC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

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Data Sheet

RCX120N25lElectrical characteristic curves

Fig.16 Drain Current Derating Curve

10000120
VGS= 10V

Drain Current Dissipation: ID/ID max. (%)

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.15 Static Drain - Source On - StateResistance vs. Drain Current(I)Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

1000

100

100.1

1108060
4020010002550

75100

125150175

Junction Temperature : Tj [ºC]

Drain Current : ID [A]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

1008/122013.02 - Rev.A

Data Sheet

RCX120N25lElectrical characteristic curves

Fig.17 Typical Capacitancevs. Drain - Source Voltage

Fig.18 Switching Characteristics
10000

1000

Switching Time : t [ns]Capacitance : C [pF]

10000

Ciss

Coss100
Crss
101

Ta = 25ºC
f = 1MHz
VGS = 0V
0.01

0.1

1

10100

100

Drain - Source Voltage : VDS [V]td(off)0.1

1td(on)

101

1000

tf

1000

Ta=25ºC
VDD= 125V
VGS= 10V
RG=10W

tr

0.01

10100

Drain Current : ID [A]Fig.19 Dynamic Input Characteristics

Gate - Source Voltage : VGS [V]20Ta=25ºC
VDD= 125V
ID= 12ARG=10W

151050010203040506070Total Gate Charge : Qg [nC]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

9/12

2013.02 - Rev.A

Data Sheet

RCX120N25lElectrical characteristic curves

Fig.20 Source Current
vs. Source - Drain Voltage

Fig21 Reverse Recovery Timevs.Source Current

100

1000

Reverse Recovery Time : trr [ns]Source Current : IS [A]

VGS=0V101

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

0.1

0.01

0.0

0.5

1.0101.5

Ta=25ºC
di / dt = 100A / ms
VGS = 0V0.1110100

Source Current : IS [A]Source-Drain Voltage : VSD [V]www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

100

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Data Sheet

RCX120N25lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit

Fig.3-2 Avalanche Waveform

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

11/12

2013.02 - Rev.A

Data Sheet

RCX120N25lDimensions (Unit : mm)
DTO-220FMEAE1A1AA2A4F

φpb1

LQcebDIM
AA1A2A4bb1cDEeE1FLpQxx

A

MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.381

INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.39
0.173

MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.10

0.106
0.11
0.453
0.118
0.083
-0.118
0.126
0.492
0.134
0.122
0.015

Dimension in mm/incheswww.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

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2013.02 - Rev.A

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated inthis document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safetyequipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
12) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact aROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws andregulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.

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R1102A