IMH21Datasheet

NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting.

OutlineParameter

Tr1 and Tr2

VCEO
VEBO
IC
R120V
12V600mA
10k

SMT6(4)
(5)
(6)
(3)
(2)
(1)

IMH21
SOT-457 (SC-74)

Features
1) Built-In Biasing Resistors
2) Two DTC614T chips in one package.
3) Low saturation voltage, typicallyVCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes thesetransistors ideal for muting circuits.
4) These transistors can be used at high current levels,
IC=600mA.
Inner circuit5) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
6) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasingof the input. They also have the advantage ofcompletely eliminating parasitic effects.
7) Lead Free/RoHS Compliant.

Collector
(4)

Base
(5)

Emitter
(6)

R1
R1

(3)
Emitter

(2)
Base

(1)
Collector

R1=10kΩApplication
Muting circuit

Packaging specifications
Part No.
IMH21

Package

Packagesize(mm)

Tapingcode

SMT62928

T110www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

1/5

BasicReel size Tape widthordering(mm)(mm)unit (pcs)
180

83,000Marking
H212014.10 - Rev.C

Data Sheet

IMH21
Absolute maximum ratings (Ta = 25°C)<For Tr1 and Tr2 in common>
Parameter

SymbolValues

Unit

Collector-base voltage

VCBO

20

V

Collector-emitter voltage

VCEO

20

V

Emitter-base voltage

VEBO

12VIC

600

mA

ICP *11A

Power dissipation

PD *2300(Total) *3mW

Junction temperature

Tj150°C

Range of storage temperatureTstg

55 to 150°C

Collector currentElectrical characteristics (Ta = 25°C)<For Tr1 and Tr2 in common>
Parameter

SymbolCollector-base breakdown voltage

BVCBO

Collector-emitter breakdown voltage

Conditions

Min.

Typ.

Max.

Unit

IC= 50A

20--V

BVCEO

IC= 1mA

20--

V

Emitter-base breakdown voltage

BVEBO

IE= 50A

12--

V

Collector cut-off current

ICBO

VCB = 20V--

0.5

A

Emitter cut-off current

IEBO

VEB = 12V--0.5

A

Collector-emitter saturation voltage

VCE(sat)IC / IB= 50mA / 2.5mA-40

150mV

DC current gainhFE

VCE= 5V, IC= 50mA820-2700-

Input resistanceR1-71013k

Transition frequency

fT *4

VCE = 10V, IE = 50mA
f = 100MHz

-150-

MHz

Output ON ResistanceRon

VI = 5V
RL = 1k, f = 1kHz

-0.9-



*1 PW=10ms, Single pulse*2 Each terminal mounted on a reference footprint*3 200mW per element must not be exceeded.
*4 Characteristics of built-in transistor

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2/5

2014.10 - Rev.C

Data SheetIMH21
Electrical characteristic curves(Ta = 25°C)

Fig.2 Grounded emitter output
characteristics

Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : IC [mA]

COLLECTOR CURRENT : Ic [mA]

VCE= 5V
10.1

Ta=100ºC
25ºC
40ºC

0.01

0.9mA

0.8mA

Ta=25ºC

0.7mA
0.6mA
0.5mA

400

0.4mA
0.3mA
0.2mA

2000.1mA

00.001
00.2

0.4

0.6

0.80110000

COLLECTOR SATURATIONVOLTAGE : VCE(sat) [mV]VCE= 5V

1000
Ta= 100°C
25°C
−40°C

1000.1110100680A

10IC/IB=201000

100
Ta= 100°C
25°C
−40°C
1010.11000

1101001000

COLLECTOR CURRENT : IC [mA]

COLLECTOR CURRENT : IC [mA]

www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

4Fig.4 Collector-emitter saturation voltage
vs. Collector Current

Fig.3 DC Current gain
vs. Collector Current
10000

2COLLECTOR TO EMITTER VOLTAGE : VCE [V]

BASE TO EMITTER VOLTAGE : VBE [V]DC CURRENT GAIN : hFE

IB= 1.0mA

600

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2014.10 - Rev.C

Data Sheet

IMH21
Electrical characteristic curves(Ta = 25°C)

Fig.5 Output ON resistancevs. input voltage
OUTPUT ON RESISTANCE : Ron []1000Ta= 25°C
f=1MHzRL=1kΩ
hFE=250 (5V/50mA)

1001010.1
0.1110100INPUT VOLTAGE : VI [V]

Fig.6 Ron measurement circuit.
Ron=RL=1kΩ

Vo
Vi-VO

×RL

D.U.T.
INPUT
Vi
100mV(rms)f=1kHz~www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

V~

OUTPUTVO

VI

4/5

2014.10 - Rev.C

Data Sheet

IMH21
Dimensions (Unit : mm)
DAe

SMT6c

L1

LpHE

E

Q

A3bx

S Al1Ae1e

A1y SSb2
Pattern of terminal position areas[Not a recommended pattern of soldering pads]

DIM
A
A1
A3bc
DEeHE
L1
LpQxy
DIM
b2
e1
l1

MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10

INCHES
MIN
0.039
0.000

MAX
0.051
0.004
0.010

0.010
0.004
0.110
0.059

0.016
0.010
0.118
0.071
0.037

0.102
0.012
0.016
0.008
-MILIMETERS
MIN
MAX
0.60
2.10
0.90

0.118
0.024
0.028
0.0120.008
0.004
INCHESMIN-MAX
0.024
0.083-0.035

Dimension in mm / incheswww.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

5/5

2014.10 - Rev.C

NoticeNotes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safetymeasures such as complying with the derating characteristics, implementing redundant andfire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have noresponsibility for any damages arising out of the use of our Poducts beyond the rating specified byROHM.
4) Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any otherparties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use ofsuch technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated inthis document.
7) The Products specified in this document are not designed to be radiation tolerant.
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cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safetyequipment, medical systems, servers, solar cells, and power transmission systems.
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10) ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of suchinformation.
12) Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact aROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
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you must abide by the procedures and provisions stipulated in all applicable export laws andregulations, including without limitation the US Export Administration Regulations and the Foreign
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R1102A