RCX081N20
Nch 200V 8.0A Power MOSFET

DatasheetlOutline

VDSS

200V

RDS(on) (Max.)

770mW

ID

8.0A

PD

40W

lFeatures

TO-220FM(1) (2)(3)

lInner circuit

1) Low on-resistance.
(1) Gate(2) Drain(3) Source2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.

*1 BODY DIODE

5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested

lPackaging specifications
Packaging

Bulk

Reel size (mm)-Tape width (mm)-Automotive Motor Drive

Basic ordering unit (pcs)

500Automotive Solenoid Drive

Taping code-lApplication
Switching Power Supply

TypeMarking

RCX081N20

lAbsolute maximum ratings(Ta = 25°C)
Parameter

SymbolValue

UnitVDSS

200

V

Tc = 25°C

ID *1

8.0

A

Tc = 100°C

ID *1

4.3

A

32

A

Drain - Source voltage
Continuous drain current*2

Pulsed drain current

ID,pulse

Gate - Source voltage

VGSS

30

V

Avalanche energy, single pulse

EAS *35.17mJ

Avalanche current

IAR *3

4.0A

Tc = 25°C

PD40

W

Ta = 25°C

PD

2.23W

Junction temperature

Tj150°C

Range of storage temperature

Tstg-55 to +150°C

Power dissipationwww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

1/12

2012.08 - Rev.A

Data Sheet

RCX081N20lThermal resistanceParameter

SymbolValues
Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

RthJC

--

3.125°C/W

Thermal resistance, junction - ambient

RthJA--56°C/W

Soldering temperature, wavesoldering for 10s

Tsold--265°C

lElectrical characteristics(Ta = 25°C)
Parameter

SymbolDrain - Source breakdown voltage

V(BR)DSS

Conditions
VGS = 0V, ID = 1mA
VDS = 200V, VGS = 0V

Zero gate voltage drain current

IDSS

Tj = 25°C
VDS = 200V, VGS = 0V
Tj = 125°CValues
Min.

Typ.

Max.

200----

10Unit
VmA-

-

100

Gate - Source leakage current

IGSS

VGS = 30V, VDS = 0V

--

100

nA

Gate threshold voltage

VGS (th)VDS = 10V, ID = 1mA

3.25-

5.25

V

VGS = 10V, ID = 4.0A-

550770-

1090

1500

1.02.0-Static drain - sourceon - state resistanceRDS(on) *4 VGS = 10V, ID = 4.0A
Tj = 125°CForward transfer admittancewww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

gfs

VDS = 10V, ID = 4.0A

2/12mWS

2012.08 - Rev.A

Data Sheet

RCX081N20
lElectrical characteristics(Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Input capacitanceCiss

VGS = 0V

-

330

-

Output capacitanceCoss

VDS = 25V

-

33

-

Reverse transfer capacitanceCrssf = 1MHz-

15-

Turn - on delay timetd(on) *4

VDD ⋍ 100V, VGS = 10V-13-

Rise timetr *4

ID = 4.0A-20-

Turn - off delay timetd(off) *4

RL = 25W-18-

Fall time

tf *4

RG = 10W-8-

UnitpF

nslGate Charge characteristics(Ta = 25°C)
Parameter

SymbolConditions

Values
Min.

Typ.

Max.

Total gate charge

Qg *4

VDD ⋍ 100V

-

8.5-

Gate - Source charge

Qgs *4ID = 8.0A-

3.4-

Gate - Drain charge

Qgd

*4

VGS = 10V-

3.4-

Gate plateau voltage

V(plateau)

VDD ⋍ 100V, ID = 4.0A

-

7.9-

UnitnC

VlBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter

SymbolConditionsValues

Unit

Min.

Typ.

Max.

--

8.0

A--32

A

Continuous source current

IS *1Pulsed source current

ISM *2

Forward voltage

VSD *4

VGS = 0V, IS = 8.0A

--

1.5

V

Reverse recovery time

trr *4-75-

ns

Reverse recovery charge

Qrr *4

IS = 4.0A
di/dt = 100A/ms

-

210-

nC

Tc = 25°C*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Pulsed

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

3/12

2012.08 - Rev.A

Data Sheet

RCX081N20Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

120100

Ta=25ºCSingle Pulse

100

PW = 100ms

1080

Drain Current : ID [A]Power Dissipation : PD/PD max. [%]lElectrical characteristic curves

6040
2000255075

PW = 1ms

0.1
PW = 10ms

0.01

100 125 150 175

Operation in thisarea is limited
by RDS(on)10.1

1101001000

Drain - Source Voltage : VDS [V]Junction Temperature : Tj [°C]

Normalized Transient Thermal Resistance : r(t)Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width10
Ta=25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)Rth(j-c) = 56ºC/W

10.1

0.01
0.0001

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single

0.01

1100Pulse Width : PW [s]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

4/12

2012.08 - Rev.A

Data Sheet

RCX081N20lElectrical characteristic curves

Fig.5 Avalanche Energy Derating Curvevs Junction Temperature

Fig.4 Avalanche Current vs Inductive Load120
VDD=50V,RG=25W
VGF=10V,VGR=0V
Starting Tch=25ºC1010.10.01

0.1110100Avalanche Energy : EAS / EAS max. [%]Avalanche Current : IAS [A]1001008060
40
2000Coil Inductance : L [mH]75

100 125 150 175

Fig.7 Typical Output Characteristics(II)28Ta=25ºC
Pulsed1.5

VGS=10.0V
VGS=8.0V

1
VGS=6.0V

0.5

0.4

0.6

0.8

54
VGS=7.0V

3201

VGS=6.0V0246810Drain - Source Voltage : VDS [V]Drain - Source Voltage : VDS [V]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

VGS=8.0V

1

VGS=5.0V
0.2

VGS=10.0V

6VGS=7.0V

0Ta=25ºCPulsed

7

Drain Current : ID [A]Drain Current : ID [A]50

Junction Temperature : Tj [°C]

Fig.6 Typical Output Characteristics(I)0255/122012.08 - Rev.A

Data Sheet

RCX081N20lElectrical characteristic curves

Fig.9 Typical Transfer Characteristics
10280

VDS= 10V

VGS = 0V
ID = 1mA

270
260

1250

Drain Current : ID [A]Normarize Drain - Source Breakdown Voltage: V(BR)DSS [V]Fig.8 Breakdown Voltage
vs. Junction Temperature

240230220210
2000.1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC0.01

190
180-50050

1000.001

150013456789 10

Gate - Source Voltage : VGS [V]Fig.10 Gate Threshold Voltage
vs. Junction Temperature

Fig.11 Transconductance vs. Drain Current

5.5

105.0

VDS = 10VID = 1mATransconductance : gfs [S]Gate Threshold Voltage : VGS(th) [V]

Junction Temperature : Tj [°C]24.54.03.53.02.5-50 -25025501
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC

0.1

0.01
0.01

75 100 125 150

Junction Temperature : Tj [°C]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

VDS= 10V

0.1

110Drain Current : ID [A]

6/12

2012.08 - Rev.A

Data Sheet

RCX081N20
lElectrical characteristic curves

2000

10000
Ta=25ºC

1500
ID = 4.0A
ID = 8.0A

1000

5000Fig.13 Static Drain - Source On - StateResistance vs. Drain Current(I)01020

Static Drain - Source On-State Resistance: RDS(on) [mW]

Static Drain - Source On-State Resistance: RDS(on) [mW]

Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage

Gate - Source Voltage : VGS [V]Ta=25ºC

VGS= 10V
1000

1000.010.1

110Drain Current : ID [A]Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance: RDS(on) [mW]

1200
1100

VGS = 10V
ID = 4A

1000
900
800
700600500400300-50050100150

Junction Temperature : Tj [ºC]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

7/122012.08 - Rev.A

Data Sheet

RCX081N20lElectrical characteristic curves

Fig.15 Static Drain - Source On - StateResistance vs. Drain Current(II)Fig.16 Drain Current Derating Curve
120

VGS= 10V

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

1000

100
Drain Current Dissipation: ID/ID max. (%)

Static Drain - Source On-State Resistance: RDS(on) [mW]

10000

100

100.010.1

160
4020010Drain Current : ID [A]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

800255075100 125 150 175

Junction Temperature : Tj [°C]8/122012.08 - Rev.A

Data Sheet

RCX081N20lElectrical characteristic curves

Fig.17 Typical Capacitancevs. Drain - Source Voltage

Fig.18 Switching Characteristics
10000

10000
Ta = 25ºC
f = 1MHz
VGS = 0V
Ciss

Switching Time : t [ns]Capacitance : C [pF]

1000

100
Coss

10
Crss

1

0.01

0.1

Ta=25ºC
VDD= 100V
VGS= 10V
RG=10W

tf

1

10100

1000
td(off)100
td(on)

10tr

1

1000

Drain - Source Voltage : VDS [V]

0.01

0.1

1

10

Drain Current : ID [A]Fig.19 Dynamic Input Characteristics
20Ta=25ºC
VDD= 100V
ID= 8.0A
RG=10W

Gate - Source Voltage : VGS [V]18161412108642005101520

Total Gate Charge : Qg [nC]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

9/12

2012.08 - Rev.A

Data Sheet

RCX081N20lElectrical characteristic curves

Fig.20 Source Current
vs. Source - Drain Voltage

1000

10VGS=0V

Reverse Recovery Time : trr [ns]Source Current : IS [A]Fig21 Reverse Recovery Time
vs.Source Current

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC

10.1

0.01

0.0

0.5

1.0

101.5

Source-Drain Voltage : VSD [V]www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

100

Ta=25ºC
di / dt = 100A / ms
VGS = 0V

0.1

110Source Current : IS [A]

10/12

2012.08 - Rev.A

Data Sheet

RCX081N20
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit

Fig.3-2 Avalanche Waveform

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

11/12

2012.08 - Rev.A

Data Sheet

RCX081N20lDimensions (Unit : mm)DTO-220FMEA

E1A1AA2A4F

φpb1

LQcebDIM
AA1A2A4bb1
cDEeE1FLpQxx

A

MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.381

INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.39
0.173

MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.100.106
0.11
0.453
0.118
0.083
-0.118
0.126
0.492
0.134
0.122
0.015

Dimension in mm/incheswww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

12/12

2012.08 - Rev.A

Notice

Notes
No copying or reproduction of this document, in part or in whole, is permitted without theconsent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter"Products"). If you wish to use any such Product, please be sure to refer to the specifications,which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of suchinformation, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly orimplicitly, any license to use or exercise intellectual property or other rights held by ROHM andother parties. ROHM shall bear no responsibility whatsoever for any dispute arising from theuse of such technical information.
The Products specified in this document are intended to be used with general-use electronicequipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, aProduct may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of thefailure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device orsystem which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medicalinstrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of anyof the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required toobtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System
http://www.rohm.com/contact/

www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

R1120A