DTD123TK
Datasheet

NPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
Parameter

Value

VCEO
ICR

40V
500mA
2.2kW

SMT3Collector
BaseEmitter

DTD123TK
SOT-346 (SC-59)

lFeatures

lInner circuit

1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasingof the input. They also have the advantage ofcompletely eliminating parasitic effects.
4) Only the on/off conditions need to be set foroperation, making the circuit design easy.
5) Complementary PNP Types :DTB123TK
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

lPackaging specifications
Part No.
DTD123TK

Package

Packagesize(mm)Taping
code

SMT3

2928

T146

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1/4

Basic
Reel size Tape widthordering(mm)(mm)
unit (pcs)180

83,000Marking
F022012.07 - Rev.C

Data Sheet

DTD123TK
lAbsolute maximum ratings (Ta = 25°C)
Parameter

SymbolValues

Unit

Collector-base voltage

VCBO

50V

Collector-emitter voltage

VCEO

40V

Emitter-base voltage

VEBO

5V

Collector current

IC500mA

Power dissipation

Pd *2200mW

Junction temperature

Tj

150°C

Range of storage temperature

Tstg-55 to +150°C

lElectrical characteristics(Ta = 25°C)
Parameter

SymbolCollector-base breakdown voltage

BVCBO

Collector-emitter breakdown voltage

Conditions

Min.

Typ.

Max.

Unit

IC= 50mA

50--V

BVCEO

IC= 1mA

40--V

Emitter-base breakdown voltage

BVEBO

IE= 50mA

5--VCollector cut-off current

ICBO

VCB = 50V

--

0.5mA

Emitter cut-off current

IEBO

VEB = 4V--0.5mA

Collector-emitter saturation voltageVCE(sat)IC / IB= 50mA / 2.5mA

--0.3

V

DC current gainhFE

VCE= 5V , IC= 50mA

100

250

600

-

Emitter-base resistance

R-

1.54

2.2

2.86

kWTransition frequency

fT *1

VCE = 10V, IE = -50mA,
f = 100MHz-200-MHz*1 Characteristics of built-in transistor*2 Each terminal mounted on a reference footprint

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2/4

2012.07 - Rev.C

Data Sheet

DTD123TK
lElectrical characteristic curves(Ta = 25°C)

Fig.2 Grounded emitter output
characteristics

Fig.1 Grounded emitter propagation
characteristics

II=50010COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : Ic (mA)

5.0mA

Ta=25ºC

VCE=5V
10.1

Ta=100ºC
25ºC
-40ºC

0.01

4.5mA
4.0mA

400

3.5mA
3.0mA

300

2.5mA
2.0mA

200
1.5mA
1.0mA

1000.5mA
0A

00.00100.5

101.5510COLLECTOR TO EMITTERVOLTAGE : VCE (V)BASE TO EMITTER VOLTAGE : VBE (V)Fig.4 Collector-emitter saturation voltage
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR SATURATIONVOLTAGE : VCE(sat) (V)

Fig.3 DC Current gain
vs. Collector Current

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)www.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

3/4

2012.07 - Rev.C

Data Sheet

DTD123TK
lDimensions (Unit : mm)
D

SMT3AcLp

L1EHEQeA3bx

S AA1l1Ae1eSb2

Patterm of terminal position areas
DIMAA1A3bc
DE
eHE
L1
LpQxy

MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.35
0.50
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.10
0.10

DIM
e1
b2
l1

INCHES
MIN
0MAX
0.051
0.004
0.01

0.014
0.004
0.11
0.059

0.02
0.01
0.118
0.071
0.04

0.102
0.012
0.016
0.008
-MILIMETERS
MIN
MAX
2.10
0.60
0.90

0.118
0.024
0.028
0.012
0.004
0.004
INCHES

MIN

MAX
0.08-

0.024
0.035

Dimension in mm/incheswww.rohm.com© 2012 ROHM Co., Ltd. All rights reserved.

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2012.07 - Rev.C

Notice

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R1120A