S-576Z R Series
www.ablic.com

EXTENDED OPERATION TEMPERATURE RANGE,HIGH-WITHSTAND VOLTAGE, HIGH-SPEED,ZCLTM HALL EFFECT IC
Rev.1.0_00© ABLIC Inc., 2020

This IC, developed by CMOS technology, is a high-accuracy Hall effect IC that operates with high-withstand voltage over awide operation temperature range.
The IC switches output voltage level when the IC detects magnetic flux density (magnetic field) polarity changes. The ZCL(Zero Crossing Latch) detection method realizes polarity changes detection with the higher accuracy than the conventional
bipolar latch method. Using this IC with a magnet makes it possible to detect the rotation status in various devices.
ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs
for customer systems. Our magnetic simulation service will reduce prototype production, development period anddevelopment costs. In addition, it will contribute to optimization of parts to realize high cost performance.
For more information regarding our magnetic simulation service, contact our sales representatives.

 Features• In addition to maintaining the performance of the existing S-576Z B Series, the operation temperature range has been
extended (−50°C to +150°C)• Uses a thin (t0.80 mm max.) TSOT-23-3S package, allowing for device miniaturization• Contributes to reduction of mechanism operation dispersion through high accuracy detection of magnetic flux density(magnetic field) polarity changes• Contributes to device safe design with a built-in output current limit circuit Specifications• Pole detection:• Output logic*1:• Output form*1:• Zero crossing latch point:• Release point (S pole)*1:

 Applications
ZCL detection
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
Nch open-drain output
Nch driver + built-in pull-up resistor (1.2 kΩ typ.)
BZ = 0.0 mT typ.
BRS = 3.0 mT typ.
BRS = 6.0 mT typ.
fC = 500 kHz typ.
tD = 8.0 μs typ.
VDD = 2.7 V to 26.0 V• Chopping frequency:• Output delay time:• Power supply voltage range*2:• Built-in regulator• Built-in output current limit circuit• Operation temperature range:
Ta = −50°C to +150°C• Lead-free (Sn 100%), halogen-free• Infrastructure equipment• Outdoor brushless DC motor• Home appliance• Housing equipment• Industrial equipment

 Package• TSOT-23-3S*1. The option can be selected.
*2. VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.)1

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
 Block Diagrams1.

Nch open-drain output product
VDD
Regulator
Chopperstabilized
amplifier*1

OUT

Output current limit circuit
VSS*1. Parasitic diodeFigure 1

2.

Nch driver + built-in pull-up resistor product
VDD

Regulator
OUT
Chopperstabilized
amplifier*1

Output current limit circuit
VSS*1. Parasitic diodeFigure 22

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
 Product Name Structure
1.

Product nameS-576Zxx x R - xxxx U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications*1
L3T2: TSOT-23-3S, Tape
Operation temperature
R: Ta = −50°C to +150°C
Release point (S pole)
1: BRS = 3.0 mT typ.
2: BRS = 6.0 mT typ.
Output logic
L: VOUT = "L" at S pole detection
H: VOUT = "H" at S pole detection
Output form
N: Nch open-drain output
1: Nch driver + built-in pull-up resistor (1.2 kΩ typ.)*1. Refer to the tape drawing.

2.

Package
Table 1
Package Name
TSOT-23-3S

Package Drawing Codes
Dimension
MP003-E-P-SD

Tape
MP003-E-C-SD

Reel
MP003-E-R-SD

3

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
3.

Product name list
Table 2
Product Name

Output Form

S-576ZNL1R-L3T2U Nch open-drain output
S-576Z1L1R-L3T2U
Remark4

Power Supply
Voltage Range
VDD = 2.7 V to 26.0 V

Nch driver + built-in pull-up resistor
VDD = 2.7 V to 5.5 V(1.2 kΩ typ.)Output Logic
VOUT = "L" at
S pole detection
VOUT = "L" at
S pole detection

Please contact our sales representatives for products other than the above.

Release point (S pole)(BRS)
3.0 mT typ.
3.0 mT typ.

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
 Pin Configuration
1.

TSOT-23-3S
Top view
1

Table 3
Pin No.
12
32

SymbolVSS
VDD
OUT

Description
GND pinPower supply pin
Output pin

3

Figure 35

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
 Absolute Maximum Ratings
Table 4Item
Power supply voltage

SymbolNch open-drain output productNch driver + built-in pull-up resistor(1.2 kΩ typ.) product

VDD

Power supply current
Output current

IDD
IOUT

Nch open-drain output productOutput voltage
Nch driver + built-in pull-up resistor(1.2 kΩ typ.) productOperation ambient temperature
Storage temperature
Caution

VOUT
Topr
Tstg

Absolute Maximum Rating
VSS − 0.3 to VSS + 28.0

Unit

VSS − 0.3 to VSS + 9.0

V

±10
±10
VSS − 0.3 to VSS + 28.0

mA
mA
V

VSS − 0.3 to VDD + 0.3

V−50 to +150
−50 to +170

°C
°C

V

The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.

 Thermal Resistance Value
Table 5
Item

SymbolJunction-to-ambient thermal resistance*1 θJA

Condition

TSOT-23-3S*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark6

Refer to " Power Dissipation" and "Test Board" for details.

Board A
Board B
Board C
Board D
Board E

Min.
−
−
−
−
−

Typ.
225
190
−
−
−

Max.
−
−
−
−
−

Unit
°C/W
°C/W
°C/W
°C/W
°C/W

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series Electrical Characteristics
1.

Nch open-drain output product
Table 6
(Ta = +25°C, VDD = 12.0 V, VSS = 0 V unless otherwise specified)
Item

Power supply voltage
Current consumption
Low level output voltage
Leakage current
Output limit current
Output delay time*1
Chopping frequency*1
Start up time*1
Output rise time*1
Output fall time*1*1.

2.

Symbol
VDD
IDD
VOL
ILEAK
IOM
tD
fC
tPON
tR
tF

Condition

Min.

Typ.

Max.

Unit

−
−

2.7
−
−
−
11
−
250
−
−
−

12.0
4.0
−
−
−
8
500
25
−
−

26.0
4.5
0.4
1.0
35
16
−
40
1.0
1.0

V
mA
V
μA
mA
μs
kHz
μs
μs
μs

IOUT = 5 mA, VOUT = "L"VOUT = "H"
VOUT = 12.0 V−−−
C = 20 pF, R = 820 Ω
C = 20 pF, R = 820 Ω

Test
Circuit
−
1
2
3
3
−
−
4
5
5

This item is guaranteed by design.

Nch driver + built-in pull-up resistor (1.2 kΩ typ.) product
Table 7
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item

Power supply voltage
Current consumption
Low level output voltage
High level output voltage
Output limit current
Output delay time*1
Chopping frequency*1
Start up time*1
Output rise time*1
Output fall time*1
Pull-up resistor*1.

Symbol
VDD
IDD
VOL
VOH
IOM
tD
fC
tPON
tR
tF
RL

Condition−
VOUT = "H"IOUT = 0 mA, VOUT = "L"
IOUT = 0 mA, VOUT = "H"VDD = VOUT = 5.0 V−−−
C = 20 pF
C = 20 pF
−

Min.

Typ.

Max.

Unit

2.7
−
−
VDD × 0.9
11
−
250
−
−
−
0.9

5.0
4.0
−
−
−
8
500
25
−
−
1.2

5.5
4.5
0.4
−
35
16
−
40
1.0
1.0
1.5

V
mA
V
V
mA
μs
kHz
μs
μs
μs
kΩ

Test
Circuit
−
1
2
2
3
−
−
4
5
5
−

This item is guaranteed by design.

7

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00

S poleMagnetic flux
density applied
to this IC (B)BRS
BZ (0)BRN
N poletD

tD
tF

Output voltage(VOUT)(Product with
VOUT = "L"at S pole
detection)

90%

10%
tD

tD
tR

Output voltage(VOUT)(Product with
VOUT = "H"at S pole
detection)

90%

10%

Figure 4 Operation Timing

8

tR

tF

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series Magnetic Characteristics
1.

Product with BRS = 3.0 mT typ.
Table 8(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item
Zero crossing latch point
S poleRelease point
N pole2.

Symbol
BZ*1
BRS*2
BRN*3

Condition
−
−
−

Min.
−1.15
1.9
−4.1

Typ.
0.0
3.0
−3.0

Max.
1.15
4.1
−1.9

Unit
mT
mT
mT

Test Circuit
4
4
4

Product with BRS = 6.0 mT typ.
Table 9(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item
Zero crossing latch point
S poleRelease point
N poleSymbol
BZ*1
BRS*2
BRN*3

Condition
−
−
−

Min.
−1.35
4.0
−8.0

Typ.
0.0
6.0
−6.0

Max.
1.35
8.0
−4.0

Unit
mT
mT
mT

Test Circuit
4
4
4

*1.

BZ: Zero crossing latch point
BZ is the value of magnetic flux density at which polarity changes are detected according to the magnetic flux
density applied to this IC.
*2. BRS: Release point (S pole)
BRS is the value of magnetic flux density of release point (S pole).
This IC releases the Hold status of the output voltage (VOUT) when the magnetic flux density applied to this IC
exceeds BRS (by moving the magnet (S pole) closer).
*3. BRN: Release point (N pole)
BRN is the value of magnetic flux density of release point (N pole).
This IC releases the Hold status of the output voltage (VOUT) when the magnetic flux density applied to this IC
exceeds BRN (by moving the magnet (N pole) closer).
RemarkThe unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.

9

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
 Test Circuits

A
R*1
820 Ω

VDD

VDD
OUT

OUT

VSS

V

VSS

*1.

Resistor (R) is unnecessary for Nch driver +built-in pull-up resistor product.
Figure 5

Figure 6

Test Circuit 1

VSS

V

*1.
Figure 7

Test Circuit 3

VDD

R*1
820 Ω

V

Resistor (R) is unnecessary for Nch driver +built-in pull-up resistor product.
Figure 9

10

C
20 pF

Test Circuit 5V

Resistor (R) is unnecessary for Nch driver +built-in pull-up resistor product.
Figure 8

OUT
VSS

R*1
820 Ω

OUT

A

OUT
VSS

Test Circuit 2

VDD

VDD

*1.

A

Test Circuit 4

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
 Standard Circuit

VDD
CIN
0.1 μF

*1.

R*1
820 Ω

OUT
VSS

Resistor (R) is unnecessary for Nch driver + built-in pull-up resistor product.
Figure 10

Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constants.

11

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
 Operation
1.

Direction of applied magnetic flux
This IC detects the magnetic flux density which is perpendicular to the package marking surface. A magnetic field isdefined as positive when marking side of the package is the S pole, and negative when it is the N pole.
Figure 11 shows polarity in a magnetic field and direction in which magnetic flux is being applied.

N
S
Marking surface

Figure 112.

Position of Hall sensor
Figure 12 shows the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
Top view
The center of Hall sensor,
in this φ0.3 mm

1

2

3

0.22 mm (typ.)Figure 1212

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
3.

Basic operation
This IC switches output voltage level (VOUT) when the IC detects magnetic flux density (magnetic field) polarity
changes by using ZCL technology. ZCL technology realizes polarity changes detection and hold operation (Holdstatus) of VOUT. This is different from the conventional bipolar latch method. ZCL detection method has nohysteresis width of the magnetic sensitivity to switch VOUT. Instead, the ZCL detection method can switch VOUT
without chattering by using the Hold status.
3. 1

ZCL basic operation
This IC switches VOUT after the output delay time (tD) from when the magnetic flux density applied to this IC
crosses BZ (from B > BRS to B < BZ or from B < BRN to B > BZ). When VOUT is switched, this IC starts the Hold
status. In the Hold status of VOUT, when the magnetic flux density applied to this IC exceeds BRS or BRN, this IC
releases the Hold status (from B < BZ to B < BRN or from B > BZ to B > BRS).
Figure 13 and Figure 14 show the VOUT operation timing when sine wave magnetic flux density is applied to thisIC.
(1) B > BRS → B < BZ, and after tD, VOUT = "L" → "H", and Hold status starts(2) B < BZ → B < BRN, and after tD, Hold status is released, and VOUT = "H" continues(3) B < BRN → B > BZ, and after tD, VOUT = "H" → "L", and Hold status starts(4) B > BZ → B > BRS, and after tD, Hold status is released, and VOUT = "L" continues

Magnetic flux
density applied
to this IC (B)

(1)

(2)

(3)

(4)

tD

tD

tD

tD

S poleBRS
BZ (0))BRN
N poleHoldstatus

Output voltage (VOUT)

Hold
statusH

Lt

Figure 13

Product with VOUT = "L" at S pole detection

13

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00(1) B > BRS → B < BZ, and after tD, VOUT = "H" → "L", and Hold status starts(2) B < BZ → B < BRN, and after tD, Hold status is released, and VOUT = "L" continues(3) B < BRN → B > BZ, and after tD, VOUT = "L" → "H", and Hold status starts(4) B > BZ → B > BRS, and after tD, Hold status is released, and VOUT = "H" continues

Magnetic flux
density applied
to this IC (B)

(1)

(2)

(3)

(4)

tD

tD

tD

tD

S poleBRS
BZ (0))BRN
N poleHoldstatus

Output voltage (VOUT)

Hold
statusH

Lt

Figure 14

14

Product with VOUT = "H" at S pole detection

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
3. 2

Prevention of VOUT chattering by Hold status

By the Hold status, this IC can switch VOUT without chattering even under an influence of external mechanicalvibrations, electrical noise, or magnetic noise.
Figure 15 and Figure 16 show the VOUT operation when the magnetic flux density applied to this IC changes near
the zero crossing latch point (BZ) and BZ is crossed multiple times.
(1) In the Hold status, the IC retains VOUT when the magnetic flux density applied to this IC crosses BZ.

(1)

(1)

S poleBRS
Magnetic flux
density applied
to this IC (B)BZ (0))BRN
N pole
tD

tD

tD

tD
H
Hold
statusHoldstatus

Output voltage (VOUT)

LtFigure 15 Product with VOUT = "L" at S pole detection

(1)

(1)

S poleBRS
Magnetic flux
density applied
to this IC (B)BZ (0))BRN
N pole
tD

tD

tD

tD

H
Hold
status

Output voltage (VOUT)

Hold
statusLt

Figure 16

Product with VOUT = "H" at S pole detection

15

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
3. 3

Operation when polarity changes direction is inverted in the Hold status

In the Hold status, when the polarity changes direction is inverted, this IC release the Hold status at the opposite
release point and switches VOUT.
Figure 17 and Figure 18 show the VOUT operation timing when the polarity change direction is inverted.
(1) B > BZ → B < BZ, and after tD, VOUT = "L" → "H", and Hold status starts(2) During Hold status, even after B < BZ → B > BZ, VOUT = "H" is retained(3) B > BZ → B > BRS, and after tD, Hold status is released, and VOUT = "H" → "L"(4) B < BZ → B > BZ, and after tD, VOUT = "H" → "L", and Hold status starts(5) During Hold status, even after B > BZ → B < BZ, VOUT = "L" is retained(6) B < BZ → B < BRN, and after tD, Hold status is released, and VOUT = "L" → "H"(1) (2)(3)(4) (5)

(6)

tD

tD

S poleBRS
Magnetic flux
density applied
to this IC (B)

・・・
・・・

BZ (0))BRN
N poletD

tD

H
Output voltage (VOUT)

Hold
statusHoldstatusLt

Figure 17 Product with VOUT = "L" at S pole detection

16

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series(1) B > BZ → B < BZ, and after tD, VOUT = "H" → "L", and Hold status starts(2) During Hold status, even after B < BZ → B > BZ, VOUT = "L" is retained(3) B > BZ → B > BRS, and after tD, Hold status is released, and VOUT = "L" → "H"(4) B < BZ → B > BZ, and after tD, VOUT = "L" → "H", and Hold status starts(5) During Hold status, even after B > BZ → B < BZ, VOUT = "H" is retained(6) B < BZ → B < BRN, and after tD, Hold status is released, and VOUT = "H" → "L"(1) (2)(3)(4) (5)

(6)

tD

tD

S poleBRS
Magnetic flux
density applied
to this IC (B)BZ (0)

・・・
・・・

)
BRN
N poletD

tD

H
Output voltage (VOUT)

Hold
statusHoldstatusLt

Figure 18 Product with VOUT = "H" at S pole detection

17

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
4.

Power-on operation
This IC requires start up time (tPON) during the time immediately after power-on until VOUT switches. During thetPON period, VOUT is "H". After tPON, when B > BRS or B < BRN is detected, polarity changes can be detected.

4. 1

B > BRS or B < BRN
When the magnetic flux density applied to this IC at power-on is B > BRS or B < BRN, after tPON, VOUT switches
according to the output logic at the S pole detection, and polarity changes can be detected.
Figure 19 and Figure 20 show VOUT operation immediately after power-on when B > BRS or B < BRN.
S poleMagnetic flux
density applied
to this IC (B)B > BRSBRS
Bz (0)BRN
B < BRN
N polePower supply voltage
(VDD)

tPON

Output voltage (VOUT)
when B > BRS"H"Output voltage (VOUT)
when B < BRN

"H"

"L"

"L"
t

Figure 19 Product with VOUT = "L" at S pole detection

S poleMagnetic flux
density applied
to this IC (B)B > BRSBRS
Bz (0)BRN
B < BRN
N polePower supply voltage
(VDD)

tPON

Output voltage (VOUT)
when B > BRS"H"Output voltage (VOUT)
when B < BRN

"H"

"L"

"L"
t

Figure 20 Product with VOUT = "H" at S pole detection

18

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
4. 2

BRN < B < BRS

When the magnetic flux density applied to this IC at power-on is BRN < B < BRS, after tPON, VOUT continues "H".
Thereafter, when the magnetic flux density changes to B > BRS or B < BRN, after tD, VOUT switches according to the
output logic at the S pole detection and magnetic flux density, and polarity changes can be detected.
Figure 21 and Figure 22 show VOUT operation when change of BRN < B < BRS → B > BRS or B < BRN occurs aftertPON.

S poleMagnetic flux
density applied
to this IC (B)BRS
B < BRS → B > BRS
0 (BZ)
B > BRN → B < BRN
BRN
N polePower supply voltage
(VDD)

tPON

tD

Output voltage (VOUT)
when B < BRS → B > BRS"H"Output voltage (VOUT)
when B > BRN → B < BRN

"H"

"L"

"L"
t

Figure 21 Product with VOUT = "L" at S pole detection
S poleMagnetic flux
density applied
to this IC (B)BRS
B < BRS → B > BRS
0 (BZ)
B > BRN → B < BRN
BRN
N polePower supply voltage
(VDD)

tPON

tD

Output voltage (VOUT)
when B < BRS → B > BRS"H"Output voltage (VOUT)
when B > BRN → B < BRN

"H"

"L"

"L"
t

Figure 22 Product with VOUT = "H" at S pole detection

19

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00
 Precautions• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by
feed-through current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under theenvironment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of
the IC by reading it multiple times.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Although this IC has a built-in output current limit circuit, it may suffer physical damage such as productdeterioration under the environment where the absolute maximum ratings are exceeded.
• The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should notexceed the power dissipation.
• Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by thehandling during or after mounting the IC on a board.
• Since the package heat radiation differs according to the conditions of the application, perform thoroughevaluation with actual applications to confirm no problems occur.
• ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement byproducts including this IC of patents owned by a third party.

20

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
 Characteristics (Typical Data)
1.

Electrical Characteristics

1. 1

S-576ZxxxR

1. 1. 1

Current consumption (IDD)vs. Temperature (Ta)1. 1. 2Current consumption (IDD)vs. Power supply voltage (VDD)

VOUT = "H"

VOUT = "H"

6.0

6.0
VDD = 5.5 V

4.0
3.0
2.0

VDD = 2.7 V
VDD = 12.0 V

1.0
0.0
1. 1. 3−50 −25050 75 100 125 150
Ta [°C]
Output delay time (tD)vs. Temperature (Ta)

4.0
3.0
2.0

Ta = +150°C

0.0

25

1. 1. 4

0

5

10

15
20
25
VDD [V]
Output delay time (tD)vs. Power supply voltage (VDD)

1015
VDD = 5.5 V

tD [μs]

VDD = 26.0 V

5

5

Caution

VDD = 12.0 V
025

Ta = −50°C

10

VDD = 2.7 V

0−50 −25050 75 100 125 150
Ta [°C]Ta = +150°C

Ta = +25°C
0

5

10

15
20
VDD [V]

25

30

VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.).
Comply with power supply voltage range and do not exceed absolute maximum ratings.

S-576ZNxxR

1. 2. 1

Low level output voltage (VOL)vs. Temperature (Ta)1. 2. 2

Low level output voltage (VOL)vs. Power supply voltage (VDD)

IOUT = 5 mA

IOUT = 5 mA

0.6

0.6

0.5

0.5

0.4
0.3

VDD = 2.7 V
VDD = 12.0 V

VDD = 5.5 V

0.2
0.1
0.0
−50 −25

VDD = 26.0 V
025

50 75 100 125 150
Ta [°C]VOL [V]VOL [V]

30

20

15

tD [μs]Ta = +25°C

1.0

20

1. 2

Ta = −50°C

5.0

VDD = 26.0 V

IDD [mA]

IDD [mA]

5.0

0.4

Ta = +25°C

0.3

Ta = +150°C

0.2
0.1
0.0

Ta = −50°C
0

5

10

15
20
VDD [V]

25

30

21

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00

1. 3

S-576Z1xxR

1. 3. 1

Low level output voltage (VOL)vs. Temperature (Ta)1. 3. 2

Low level output voltage (VOL)vs. Power supply voltage (VDD)
IOUT = 0 mA

0.6

0.5

0.5

0.4
0.3
0.2

VDD = 5.5 V
VDD = 5.0 V
VDD = 2.7 V

VOL [V]VOL [V]IOUT = 0 mA

0.6

0.1

Ta = +150°C
Ta = +25°C
Ta = −50°C

0.3
0.2
0.1

0.0
−50 −25

1. 3. 3

0.4

0

25

0.0

50 75 100 125 150
Ta [°C]High level output voltage (VOH)vs. Temperature (Ta)1. 3. 42

3

4
VDD [V]

5.0

5.0

4.0

4.0

2.0
1.0

VDD = 2.7 V

0.0−50 −250

25

50 75 100 125 150
Ta [°C]VOH [V]VOH [V]

22

IOUT = 0 mA

6.0
VDD = 5.0 V VDD = 5.5 V

6High level output voltage (VOH)vs. Power supply voltage (VDD)

IOUT = 0 mA

6.0

3.0

5

Ta = +150°C

3.0

Ta = +25°C
Ta = −50°C

2.0
1.0
0.0

2

3

4
VDD [V]

5

6

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series
Magnetic Characteristics
S-576Zxx1R

Zero crossing latch point (BZ)
vs. Temperature (Ta)N pole → S pole
8.0
6.0
VDD = 12.0 V
4.0
VDD = 26.0 V
2.0
0.0
−2.0
−4.0
VDD = 5.5 V VDD = 2.7 V
−6.0
−8.0
−50 −25 0 25 50 75 100 125 150
Ta [°C]2. 1. 5

Release point (BRS, BRN)
vs. Temperature (Ta)8.0
BRS
VDD = 26.0 V
6.0
VDD = 5.5 V VDD = 12.0 V
4.0
2.0
VDD = 26.0 V
0.0
VDD = 2.7 V
−2.0
−4.0
VDD = 2.7 V VDD = 5.5 V−6.0 BRNVDD = 12.0 V−8.0−50 −25 0 25 50 75 100 125 150
Ta [°C]

Caution2. 1. 2 Zero crossing latch point (BZ)
vs. Power supply voltage (VDD)
S pole → N poleBZ [mT]S pole → N pole
8.0
6.0
VDD = 12.0 V
VDD = 26.0 V
4.0
2.0
0.0
−2.0
VDD = 2.7 V−4.0
VDD = 5.5 V
−6.0
−8.0
−50 −25 0 25 50 75 100 125 150
Ta [°C]2. 1. 3BZ [mT]

Zero crossing latch point (BZ)
vs. Temperature (Ta)

8.0
6.0
4.0
2.0
0.0
−2.0
−4.0
−6.0
−8.0

Ta = +150°C
Ta = +25°C

Ta = −50°C
0

5

10

15
20
VDD [V]

25

30

2. 1. 4 Zero crossing latch point (BZ)
vs. Power supply voltage (VDD)
N pole → S poleBZ [mT]

BZ [mT]

2. 1. 1

8.0
6.0
4.0
2.0
0.0
−2.0
−4.0
−6.0
−8.0

Ta = −50°C
Ta = +25°C

Ta = +150°C
0

5

10

15
20
VDD [V]

25

30

2. 1. 6 Release point (BRS, BRN)
vs. Power supply voltage (VDD)
8.0
Ta = −50°C
6.0 BRS Ta = +25°C
4.0
2.0
Ta = +150°C
0.0
Ta = +150°C
−2.0
−4.0
−6.0 BRN Ta = +25°C
Ta = −50°C
−8.0
0
30
5
10
15
20
25
VDD [V]

BRS, BRN [mT]

2. 1

BRS, BRN [mT]2.

VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.).
Comply with power supply voltage range and do not exceed absolute maximum ratings.

23

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
S-576Z R Series
Rev.1.0_00

2. 2

S-576Zxx2R

2. 2. 1

Zero crossing latch point (BZ)
vs. Temperature (Ta)2. 2. 2 Zero crossing latch point (BZ)
vs. Power supply voltage (VDD)

BZ [mT]

VDD = 12.0 V

VDD = 5.5 V−50 −250

25

VDD = 2.7 V

50 75 100 125 150
Ta [°C]

Zero crossing latch point (BZ)
vs. Temperature (Ta)N pole → S pole
8.0
6.0
VDD = 12.0 V
4.0
VDD = 26.0 V
2.0
0.0
−2.0
−4.0
VDD = 5.5 V VDD = 2.7 V
−6.0
−8.0
−40 −25 0 25 50 75 100 125 150
Ta [°C]

BRS, BRN [mT]2. 2. 5

Release point (BRS, BRN)
vs. Temperature (Ta)
8.0
BRS
6.0
4.0
VDD = 26.0 V
VDD = 5.5 V
2.0 VDD = 2.7 V
VDD = 12.0 V
0.0
V DD = 26.0 V
VDD = 5.5 V−2.0
DD = 12.0 V
V
VDD = 2.7 V
−4.0

−6.0
BRN
−8.0
−50 −25

Caution24

0

25

50 75 100 125 150
Ta [°C]Ta = +150°C
Ta = +25°C

Ta = −50°C
0

5

10

15
20
VDD [V]

25

30

2. 2. 4 Zero crossing latch point (BZ)
vs. Power supply voltage (VDD)
N pole → S poleBZ [mT]

BZ [mT]2. 2. 3

VDD = 26.0 V

S pole → N pole

8.0
6.0
4.0
2.0
0.0
−2.0
−4.0
−6.0
−8.0

8.0
6.0
4.0
2.0
0.0
−2.0
−4.0
−6.0
−8.0

Ta = −50°C
Ta = +25°C

Ta = +150°C
0

5

10

15
20
VDD [V]

25

30

2. 2. 6 Release point (BRS, BRN)
vs. Power supply voltage (VDD)
8.0
BRS
6.0
4.0
Ta = −50°C
Ta = +25°C
2.0
Ta = +150°C
0.0
Ta = −50°C−2.0 Ta = +150°C Ta = +25°C
−4.0
−6.0
BRN
−8.0
0
30
5
10
15
20
25
VDD [V]

BRS, BRN [mT]

BZ [mT]S pole → N pole

8.0
6.0
4.0
2.0
0.0
−2.0
−4.0
−6.0
−8.0

VDD = 2.7 V to 5.5 V when output form is Nch driver + built-in pull-up resistor (1.2 kΩ typ.).
Comply with power supply voltage range and do not exceed absolute maximum ratings.

EXTENDED OPERATION TEMPERATURE RANGE, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, ZCLTM HALL EFFECT IC
Rev.1.0_00
S-576Z R Series Power Dissipation
TSOT-23-3S
Tj = +170°C max.

Power dissipation (PD) [W]

5
4
3
2
1 B
A
0

0

25

50

75

100

125

150

175

Ambient temperature (Ta) [°C]
BoardPower Dissipation (PD)

A
B
C
D
E

0.64 W
0.76 W−−−

25

TSOT-23-3S Test Board
IC Mount Area

(1) Board A
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]

1
2
3
4

Thermal via

Specification
114.3 x 76.2 x t1.6
FR-4
2Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.070-(2) Board B
Item
Size [mm]Material
Number of copper foil layer

Copper foil layer [mm]Thermal via

1
2
3
4

Specification
114.3 x 76.2 x t1.6
FR-4
4Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070-

No. TSOT23x-A-Board-SD-1.0

ABLIC Inc.

2.9±0.2
1

2

3

+0.1

0.16 -0.06

0.95±0.1
1.9±0.2

0.42±0.1

No. MP003-E-P-SD-1.0

TITLE

TSOT233S-A-PKG Dimensions

No.

MP003-E-P-SD-1.0

ANGLE
UNIT

mm

ABLIC Inc.

ø1.5

+0.1
-0

4.0±0.1

2.0±0.05+0.1

ø1.0 -00.25±0.1(0.4)

4.0±0.1

0.95±0.2
3.23±0.2
(1.0)

1

2

3

Feed direction

No. MP003-E-C-SD-1.0

TITLE

TSOT233S-A-Carrier Tape

No.

MP003-E-C-SD-1.0

ANGLE
UNIT

mm

ABLIC Inc.

+1.0

9.0 - 0.0
11.4±1.0

Enlarged drawing in the central part

ø13±0.2

(60°)

(60°)

No. MP003-E-R-SD-1.0

TITLE

TSOT233S-A-Reel

No.

MP003-E-R-SD-1.0

ANGLE

QTY.

UNIT

mm

ABLIC Inc.

3,000

Disclaimers (Handling Precautions)1.

All the information described herein (product data, specifications, figures, tables, programs, algorithms andapplication circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.

2.

The circuit examples and the usages described herein are for reference only, and do not guarantee the success ofany specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any otherright due to the use of the information described herein.

3.

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4.

Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
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are used and verify suitability, safety and other factors for the intended use.

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8.

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9.

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2.4-2019.07

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