ᇹ 9 ‫˯ ׅ‬ภǻȳǿȸᄂᆮʩ්˟ ȗȭǰȩȠŠ ᄂᆮʩ්˟
ǪȸȩȫǻȃǷȧȳ࠯঺  ࠰  உ  ଐ ້ Ჴ᳸Ჴ˙ᕲᜓऍțȸȫȝǹǿȸǻȃǷȧȳ࠯঺  ࠰  உ  ଐ ൦   Ჴ᳸Ჴ
‫ٶ‬ႸႎǹȚȸǹŠ ᚨᇌ  ԗ࠰ ᚡࣞʙಅᚡࣞࡸχ࠯঺  ࠰  உ  ଐ ൦ Ჴ᳸Ჴ˙ᕲᜓऍțȸȫᚡࣞᜒ๫˟࠯঺  ࠰  உ  ଐ ൦ Ჴ᳸Ჴ˙ᕲᜓऍțȸȫᚡࣞᅔ᝶˟࠯঺  ࠰  உ  ଐ ൦ Ჴ᳸Ჴ
‫ٶ‬ႸႎǹȚȸǹŠ ‫ئ‬৑Ჴ˙ᕲ‫׎‬ᨥᄂᆮǻȳǿȸŠ ɟᑍᜒ๫଺᧓Ჴ ЎᲢឋွࣖሉ  ЎǛԃǉᲣ
13:00-13:05

ƸơǊƴ‫ٻ‬ឭ ॰ɟ పࢭࣥࢱ࣮㛗ǻȃǷȧȳ 13:05-13:25

ࡈᧈᲴဋɶ ᨻଢ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ Ӵฌ ǇǓƑ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭≉௵ຓᩍ㸦኱㉺◊✲ᐊ㸧
O-01ǤȗǷȭȳᣠ҄ᤧȊȎᄬࣱ˳ƷЎή‫ܖ‬ႎƓǑƼྸᛯႎᄂᆮ
Spectroscopic and theoretical study on epsilon iron oxide nanomagnets

13:25-13:45

ᢒ‫܇୑ ޛ‬O-02⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦㛗㇂ᕝ◊✲ᐊ㸧ƦƷ‫ئ‬ᩓൢˡ‫ݰ‬ย‫ܭ‬ƴǑǔҞ‫ؕ˳ݰ‬ெɥƷ Pb ឬᕓᐏƴƓƚǔឬˡ‫ݰ‬ཎࣱSuperconductivity of Pb ultrathin film on semiconductor substrates studied
by in-situ transport measurements

13:45-14:05

ɶ߷ ᘽ඙

ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭D1㸦ᒾబ㺃୰㔝◊✲ᐊ㸧

O-03‫ޖ‬ཞཋឋƷ˯ǭȣȪǢ᪸؏ƴƓƚǔࢍኽӳ 2 ഏΨឬˡ‫ݰ‬Strong-coupling 2D superconductivity in the low carrier density regime oflayered materials

14:05-14:25

Ѩᙸ ँ‫ٽ‬O-04⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M2㸦ᓥ㔝◊✲ᐊ㸧᭗ࢍࡇȆȩȘȫȄඬѕឪƴǑǔ d ඬឬˡ‫ ˳ݰ‬Bi2Sr2CaCu2O8+x ƴƓƚǔȒȃǰǹȢȸȉƷᚇย
Higgs mode in a d-wave superconductor Bi2Sr2CaCu2O8+x excited by anintense terahertz pulse114:25-14:40

˞ কǻȃǷȧȳ 14:40-15:00

ࡈᧈᲴ‫ ˱ޥ‬፯‫ ܨ‬ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ ‫˱ܢ‬፦ ๾⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦⚟ᒣ◊✲ᐊ㸧

 O-05ឬ්ѣȘȪǦȠƷȕǣȫȠȕȭȸƷࢷᡮȡǫȋǺȠ
Rate Limiting Mechanism of Film Flow in Superfluid Helium

15:00-15:20

஌ᢿ ᘽʍ

ᕤᏛ⣔◊✲⛉࣭࣐ࢸࣜ࢔ࣝᕤᏛᑓᨷ࣭D1㸦ᯞᕝ࣭ᚨᮏ◊✲ᐊ㸧

 O-06

PbBi2Te4 ኒȈȝȭǸǫȫዌጂ˳Ʒ˺ᙌƱȐȫǯዌጂࣱ
Fabrication of PbBi2Te4-system topological insulators and their bulk
resistivity

15:20-15:40

ᙱଔ ᠼɟᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭D1㸦ᕝ㷂◊✲ᐊ㸧

 O-07

ȇǣȩȃǯҞ᣿‫ ޓ‬Cd3As2 ᕓᐏƴƓƚǔ᣽‫܇‬᠞ᡛྵᝋƱȈȝȭǸǫȫႻ᠃ᆆ
Quantum transport and topological phase transition in Dirac semimetal
Cd3As2 thin film

15:40-16:00

Le Duc Anh ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭ຓᩍ㸦⏣୰࣭኱▮◊✲ᐊ㸧
 O-08Fe-based narrow-gap ferromagnetic semiconductors: New materials forhigh-performance spintronic devices

16:00-16:20

˞ ক ƂǳȸȒȸȖȬǤǯƃ

ǻȃǷȧȳ            ࡈᧈᲴဋလ ʶ ᕤᏛ⣔◊✲⛉࣭ࣂ࢖࢚࢜ࣥࢪࢽ࢔ࣜࣥࢢᑓᨷ 
16:20-16:40

ɶ‫ ش‬ᅎ‫܇‬⏕⏘ᢏ⾡◊✲ᡤ࣭ຓᩍ㸦஭ୖ◊✲ᐊ㸧

 O-09ȞȳǬȳțǦᣠ‫ط‬ǬȩǹƷᄬൢႎࣱឋ
Magnetic properties of manganese borate glasses

16:40-17:00

ᡈᣃ ීʂ㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ࣭D2㸦ศᯒ໬Ꮫ◊✲ᐊ㸧 O-10ǢǳȤǬǤᆑ௵‫ޖ‬ƷǫȫǵǤȈኽ୒Ʒഎᨋƴ᧙Ƣǔᄂᆮ
Study on the defects of calcite crystals in the prismatic layer of Pinctada
fucata17:00-17:20

௎ ፯ʂ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭D2㸦㧗ᮌ࣭໭ᕝ◊✲ᐊ㸧 O-11ȏǤȑȸȏȋǫȠE-Li2IrO3 Ʒ NMRȷᄬ҄ย‫ܭ‬ƴǑǔ᭗‫ן‬Ⴛ‫׋‬High-pressure phase diagram by NMR and magnetization study on
hyperhoneycomb E-Li2IrO3






2

ȝǹǿȸǻȃǷȧȳ
P-01

 ࠯঺ 30 ࠰ 2 உ 21 ଐ(൦) 9:30-11:30                  ืஜ Ⴧʴ 㝃ᒓ⑓㝔࡚ࢇ࠿ࢇࢭࣥࢱ࣮࣭ࢭࣥࢱ࣮㛗෩˳ȘȪǦȠưϬҲƞǕƨ SQUID ᄬளᚘƷᐮ࠿ࣖဇClinical application of SQUID magnetometer cooled by liquid heliumP-02ᒰ؉ ዩᬐ ㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ࣭M2㸦ศᯒ໬Ꮫ◊✲ᐊ㸧ȐǤǪȟȍȩȫϋƷᣠࣱǿȳȑǯឋƴƓƚǔ‫ࣱؕط‬സؕƷࢫлƷᚐௌFunction analyses of basic residues in the acidic proteins of biominerals

P-03ᨩ Ⴧɟ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭Ꮫ⾡ᨭ᥼ᑓ㛛⫋ဨ㸦㛵㔝◊✲ᐊ㸧β၃௨ᑥƴဇƍǔᄬࣱȓȸǺƷᚸ̖
Evaluation of magnetic beads for magnetic immunostaining

P-04

ᨕ ᯽ ㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ࣭D1㸦㣗ရ⏕≀ᵓ㐀Ꮫ◊✲ᐊ㸧‫ڤ‬༏ᓏƷᤧኽӳǿȳȑǯឋƷᤧኽӳཎࣱƴ‫ݣ‬Ƣǔ pH Ʒࢨ᪪ƷᚐௌpH dependency of iron coordination by TtFbpA, the periplasmic iron-binding subunit of the ABCtype iron transporter from Thermus thermophilus HB8, analyzed by solution NMR

P-05

ɶ߷ ࠳ᅎ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭≉௵ຓᩍ㸦኱㉺◊✲ᐊ㸧ǷǢȎ௚೛ᣐˮ᭗Ў‫܇‬ƴƓƚǔȗȭȈȳˡ‫ࣱݰ‬
Proton conductivity of cyanido-bridged coordination polymers

P-06

Zhendong LiuᕤᏛ⣔◊✲⛉࣭ࢩࢫࢸ࣒ᕤᏛᑓᨷ࣭ຓᩍ㸦኱ஂಖ࣭⬥ཎ◊✲ᐊ㸧
Recent Development in Ultrafast and Continuous Flow Synthesis of Crystalline Microporous
Materials

P-07ᆁ ޻ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭D2㸦ᒾబ㺃୰㔝◊✲ᐊ㸧
Diameter dependent superconductivity in individual WS2 nanotubes

P-08ჽ ྘ ㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ࣭㣴⏕カࢆ⛉Ꮫࡍࡿ་㣗㎰㐃ᦠ◊✲ᐊ࣭PD
ನᡯऴ‫إ‬ƴؕƮƘ 4-HIL ӳ঺ᣞእƷᇌ˳ᢠ৸ࣱƷСࣂStructure-guided optimization of stereoselectivity of 4-HIL synthase

P-09

ɶ௎ ᎓ʚ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭ຓᩍ㸦኱㉺◊✲ᐊ㸧
Cyanido-bridged metal assemblies with nano channeled or thermally stable structuresP-10

ψӞ ‫ݎ‬ʂ ᕤᏛ⣔◊✲⛉࣭ࢩࢫࢸ࣒ᕤᏛᑓᨷ࣭D2㸦ᇽච࣭ᕊᓊ◊✲ᐊ㸧ǽȸȩȸ൦እᙌᡯဇҞ‫˳ݰ‬ήᩓಊƴ‫ݣ‬Ƣǔᘙ᩿ǳȸȆǣȳǰƷ౨᚛
Effect of Surface Coating onto a Semiconductor Photoelectrode for Solar Hydrogen Production

P-11෌Ҿ ࢀѨ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭D1㸦⏣୰࣭኱▮◊✲ᐊ㸧ࢍᄬࣱҞ‫ ˳ݰ‬GaMnAs Ǜဇƍƨ್‫׹‬ǹȔȳȐȫȖȇȐǤǹƴƓƚǔǹȔȳ̔‫܍‬ˡ‫ݰ‬
Spin-Dependent Transport of Ferromagnetic-Semiconductor GaMnAs-Based Lateral Spin-Valve
Devices3

P-12

ɥဋ ͤʴ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᶡⲔ◊✲ᐊ㸧ឬˡ‫ ݰ‬Al-ɳЗʚ᣻ȊȎኬዴ InAs-ឬˡ‫ ݰ‬Al ȇȐǤǹưƷឬˡ‫ݰ‬ᩓ්Ʒ᩼‫ޅ‬৑̮ӭƷ౨Ј
Non-Local Signal of Supercurrent in Al – Double Nanowires InAs – Al device

P-13

൷ ᩗ౐ ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M2㸦⸨᳃◊✲ᐊ㸧
Orbital magnetic moment anisotropy in heavy metal-Co heterointerfaces studied by x-ray magnetic
circular dichroism

P-14ᙱ᣼ ᨙ‫ٽ‬ᢹ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᕝ㷂◊✲ᐊ㸧ǤǪȳ෩˳Ǜဇƍƨ PZT/Nb-SrTiO3 မ᩿Ʒˡ‫ݰ‬СࣂControl of Electrical Conduction at PZT/Nb-SrTiO3 Interface through Ionic-Liquid Gating

P-15

Olaf Stefanczyk ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭≉௵ຓᩍ㸦኱㉺◊✲ᐊ㸧
Design and synthesis of chiral Ln(III)-W(V) molecular magnets

P-16௥Ҿ द‫ ٽ‬ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M1㸦ᒾబ㺃୰㔝◊✲ᐊ㸧ዌጂ˳ႎᢟᆆ᣿‫ޓ‬ǫȫǳǲȊǤȉȘȆȭမ᩿ƴƓƚǔᩓൢˡ‫ݰ‬Conducting hetero-interface between insulating transition-metal dichalcogenides

P-17‫ ߃ޛ‬፽‫⌮ ٽ‬Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦ᮧᕝ◊✲ᐊ㸧ឬ˯ภɦưဇƍǔȘȪǦȠᲭᗡᚐ‫ן‬щ‫׹‬ภࡇᚘƷᚨᚘA design of Helium 3 melting curve thermometer that operates at ultra-low temperature

P-18

λ௅߷ ჷʍ ᕤᏛ⣔◊✲⛉࣭ཎᏊຊᅜ㝿ᑓᨷ࣭D3㸦㧗ᶫ◊✲ᐊ㸧ȞǤǯȭඬ̮ӭ‫ٶ‬᣻҄‫ׅ‬ែƴǑǔJ ዴ TES ᛠЈܱᚰDevelopment of microwave SQUID multiplexer for gamma-ray transition-edge sensor arrayP-19Ӵဋ ᢷՁ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭M1㸦኱㉺◊✲ᐊ㸧ᨼᆢ‫ ׹‬Co–W ǪǯǿǷǢȎᥴ˳ƷȆȩȘȫȄඬԈӓཎࣱ
Terahertz wave absorption of Co-W cyanido-bridged metal assemblies

P-20

ܴ᜿ द‫⌮ ٽ‬Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭D1㸦ᓥ㔝◊✲ᐊ㸧
GaAs Ʒѕឪ‫܇‬σᯚѕឪɦƴƓƚǔήȉȬǹȈཞ७ƷᚇยObservation of light-dressed states under resonant excitation of excitons in GaAs

P-21

ᤠங ʰ‫ ٽ‬ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭M2㸦⏣୰࣭኱▮◊✲ᐊ㸧p ‫׹‬ǲȫȞȋǦȠƔǒදλƠƨσᯚȈȳȍȫǭȣȪǢƴǑǔᤧ᣽‫܇‬ʟৎɶƷ᣽‫܇‬ǵǤǺјௐƷ౨Ј
Quantum size effect in a Fe quantum well detected by resonant tunneling carriers injected from ap-type Ge semiconductor electrodeP-22

ဋɶ ச፶‫ ܇‬ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᶡⲔ◊✲ᐊ㸧Წ‫ޖ‬ǰȩȕǧȳƷ zLLᲢǼȭȩȳȀǦแˮᲣƴƓƚǔ᩼‫ޅ‬৑᠞ᡛย‫ܭ‬
Non-local transport in bilayer graphene under magnetic field

4

P-23

ʟΨ ͤ‫⌮ ٽ‬Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭≉௵ຓᩍ㸦኱㉺◊✲ᐊ㸧ǷǢȎ௚೛‫ ׹‬Fe(II)ǹȔȳǯȭǹǪȸȐȸȍȃȈȯȸǯᥴ˳ƴƓƚǔ᣿‫ޓ‬ፗ੭јௐ
Influence of metal substitution in cyanido-bridged Fe(II) spin-crossover compounds

P-24஭ແ ᅵଢ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M1㸦㮵㔝⏣◊✲ᐊ㸧ɟ᠆‫ן‬ɦƴƓƚǔ T -(ET)2I3 Ʒᩓൢˡ‫ݰ‬ཎࣱ
Electrical transport properties of T -(ET)2I3 under uniaxial strain

P-25

ᤠங ‫⌮ ݩݵ‬Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦ᮧᕝ◊✲ᐊ㸧ҥҾ‫ޖ܇‬ȘȪǦȠ 3 Ʒૼ‫ڈ‬ǹȔȳ෩˳ཞ७ƷᚐଢƴӼƚƨ NMR ǻȫƷᚨᚘȷᙌ˺
Design and construction of NMR cell for investigation of novel spin liquid state in monolayer
helium-3

P-26

௅‫ ޢ‬ᅵ೔ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᒾబ㺃୰㔝◊✲ᐊ㸧Ў‫܇‬ዴǨȔǿǭǷȸ২ᘐǛဇƍƯ˺ᙌƠƨ NbSe2 ǨȔǿǭǷǡȫᕓᐏƴƓƚǔឬˡ‫ݰ‬Superconductivity in NbSe2 epitaxial thin films grown by molecular-beam epitaxy

P-27‫ ޺ݱ‬ᛗʍ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭D2㸦኱㉺◊✲ᐊ㸧ɶ࣎‫ݣ‬ᆅࣱǛਤƨƳƍǷǢȎ௚೛‫׹‬᣿‫ޓ‬ᨼᆢ˳ƴƓƚǔ᩼ዴ࢟ᄬൢή‫ܖ‬јௐƷᚇยObservation of magnetization-induced second harmonic generation in a noncentrosymmetriccyanido-bridged metal assemblyP-28‫ٻ‬ϋ ᅎᝮ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭D3㸦ᕝ㷂◊✲ᐊ㸧ࢍᄬࣱ Co ᣠ҄ཋᕓᐏƴƓƚǔᄬൢ᠞ᡛཎࣱƱᩓᒵᆆѣјௐ
Magneto-transport properties and charge transfer effect in ferromagnetic Co oxide thin films

P-29

Chun LIN ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M2㸦⸨᳃◊✲ᐊ㸧
Electron-doped superconductor Pr2-x-yLayCexCuO4 after protect annealingP-30

ᅕ൨ ͤɟ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭D3㸦㛗㇂ᕝ◊✲ᐊ㸧
LaO ǨȔǿǭǷȣȫᕓᐏƷឬˡ‫ݰ‬ཎࣱSuperconducting properties of LaO epitaxial thin film

P-31ଔ߷ ‫˙ډ‬ኔ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭M2㸦⏣୰࣭኱▮◊✲ᐊ㸧
Transport and magnetic properties of n-type ferromagnetic semiconductor (In,Fe)As co-doped with
Mn ; (In,Fe,Mn)AsP-32

᭗‫ ޛ‬ദᘍ ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭D2㸦ᓥ㔝◊✲ᐊ㸧ಊ˯ภ᭗݅ࡇɦƴƓƚǔȐȫǯ GaAs ɶƷѕឪ‫᧓܇‬Ⴛʝ˺ဇƱѕឪ‫܇‬༏҄ȀǤȊȟǯǹ
Exciton-exciton interaction in a low-temperature and high-density exciton state in bulk GaAs andthe exciton thermalization dynamics

P-33

Kunal Kumar ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭M1㸦኱㉺◊✲ᐊ㸧
Emission Color Modulation and Slow Magnetic Relaxation in the Series of Trimetallic Complexes

5

P-34

ᒉ௅ ී‫ ٻ‬ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M1㸦㮵㔝⏣◊✲ᐊ㸧
Measurements of thermoelectric effects in the quasi-2D organic conductor ț -(BEDTTTF)4Hg2.89Br8

P-35

Ӵဋ ᄂʼ ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M2㸦ᮧᕝ◊✲ᐊ㸧ឬ්ѣȘȪǦȠ 3 ƴƓƚǔ᣽‫܇‬ǢȳȉȬȸǨȕӒ‫ݧ‬ᚌࡇ̔‫ࣱ܍‬ᚇยᘺፗƷ᧏ႆ
Development of Equipment to Observe Angle Dependence of Quantum Andreev Reflection inSuperfluid Helium ThreeP-36

ྛ ឭ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭D1㸦ᒾబ㺃୰㔝◊✲ᐊ㸧
Transport properties of transition-metal dichalcogenide thin films grown by molecular beam epitaxy

P-37

WANG Junhao ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭M2㸦኱㉺◊✲ᐊ㸧
Cyanido-bridged d-f bimetallic frameworks showing dual functionalities of Dy-centered slow
magnetic relaxation and color-tunable photoluminescenceP-38

ɺ೛ ɟ᠗ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M1㸦ᕝ㷂◊✲ᐊ㸧
SrTiO3 ؕெɥƷ EuTiO3 ᕓᐏƷ᭗ᆆѣࡇ҄Ʊᄬൢ᠞ᡛཎࣱ
Fabrication and magnetotransport properties of EuTiO3 films on SrTiO3 substrateP-39‫ޛ‬Ҿ ࢀ᩹ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭ຓᩍ㸦⏣⏿◊✲ᐊ㸧
Co-Si ፗ੭ࠎ‫ם‬᫏ᤧǬȸȍȃȈᕓᐏƴƓƚǔǯȩǹǿȸǰȩǹཞ७ƱǹȔȳඬѕឪ
Cluster glass state and spin-wave excitation in Co-Si substituted rare-earth iron garnet thin films

P-40ɶ஭ ᅙ‫ ܇‬పࢭࣥࢱ࣮࣭◊✲㛤Ⓨ㒊㛛࣭≉௵ຓᩍᩓ්දλɦƷ s ඬឬˡ‫ ˳ݰ‬NbN ᕓᐏƴƓƚǔȆȩȘȫȄዴ࢟ЎήƴǑǔឬˡ‫ݰ‬ȒȃǰǹȢȸȉƷᚇยSuperconducting Higgs mode in a thin film of s-wave superconductor NbN observed by linear THz
spectroscopy with supercurrent injection
P-41‫ޢ‬ஜ ී࠯ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭M2㸦⏣୰࣭኱▮◊✲ᐊ㸧
p-InFeAs/n-InMnAs ࢍᄬࣱȘȆȭ੗ӳƴƓƚǔǹȔȳ̔‫܍‬ˡ‫ݰ‬
Spin dependent transport in an all-ferromagnetic p-InMnAs/n-InFeAs heterojunctions

P-42

Romain Grasset పࢭࣥࢱ࣮࣭◊✲㛤Ⓨ㒊㛛࣭PD

Higgs spectroscopy in a d-wave superconductorP-43ဃʟ ᫠ᯓ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭ຓᩍ㸦኱㉺◊✲ᐊ㸧ǤȗǷȭȳᣠ҄ᤧƷȟȪඬᄬൢ‫᠃ׅ‬Millimeter wave magnetic rotation of epsilon-iron oxideP-44ᆖ‫ ׽‬ᨺʼ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦㮵㔝⏣◊✲ᐊ㸧
ஊೞD-(BEDT-TTF)2I3 ƴƓƚǔᩓᒵᆃࡀႻƓǑƼ massless Dirac ᩓ‫܇‬ႻƷᄬൢ᠞ᡛཎࣱ
Transport property of Massless Dirac Fermion(MDF) and Charge Order(CO) electrons in D(BEDT-TTF)2I3

6

P-45

‫ ߷ݱ‬Ѩʂ ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M2㸦⚟ᒣ◊✲ᐊ㸧ҥҾ‫ޖ܇‬ȘȪǦȠ 3 Ʒൢ෩Ⴛ᠃ᆆƷᚇยObservation of Gas-Liquid Phase Transition in Monolayer 3He

P-46

ឭ߷ ፽‫ ٽ‬ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᒾబ㺃୰㔝◊✲ᐊ㸧ᲭഏΨȐȫǯឬˡ‫˳ݰ‬ƴƓƚǔ᩼ႻӒᩓᒵ᠞ᡛྵᝋ
Unidirectional electric transport in 3D bulk superconductorP-47‫ش‬ஜ ᎢՁ ⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭M1㸦኱㉺◊✲ᐊ㸧ǤȗǷȭȳᣠ҄ᤧƷᄬൢཎࣱƴƓƚǔ᣿‫ޓ‬ፗ੭ƷјௐThe effect of metal-substitution on magnetic properties of epsilon iron oxideP-48

ɶຓ ˲ʼ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦ᕝ㷂◊✲ᐊ㸧҄ӳཋҞ‫ؕ˳ݰ‬ெɥƴ঺ᧈƠƨ Cd3As2 ᕓᐏƷኽ୒ࣱƓǑƼ᠞ᡛཎࣱƷᚸ̖
Crystal structure and transport characterizations of Cd3As2 thin films grown on compound
semiconductor substrates

P-49

᧙ ‫ ̢ܪ‬ᕤᏛ⣔◊✲⛉ࢫࣆࣥࢺࣟࢽࢡࢫᏛ⾡㐃ᦠ◊✲ᩍ⫱ࢭࣥࢱ࣮࣭≉௵෸ᩍᤵ㸦⏣⏿◊✲ᐊ㸧ೞᏡࣱᣠ҄ᤧᕓᐏǛဇƍƨ‫ٽ‬ᨗήǨȍȫǮȸ‫٭‬੭እ‫܇‬
Solar energy conversion systems based on functional iron oxide thin films

P-50ܷϋ औ‫⌮ ٽ‬Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦㛗㇂ᕝ◊✲ᐊ㸧
Li ǤȳǿȸǫȬȸȈƠƨ᩷ȪȳƷǨȔǿǭǷȣȫ঺ᧈƱƦƷᩓൢˡ‫ݰ‬ཎࣱEpitaxial Growth of Li intercalated Blue Phosphorus and Its Electric Transport Property

P-51

௎ බ࠯ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦༓ⴥ◊✲ᐊ㸧
Pt/Co/Pd/MgO ನᡯƴƓƚǔᄬൢီ૾ࣱƴ‫ݣ‬ƢǔᩓမјௐƷؕெ̔‫ࣱ܍‬
Substrate dependence of electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structuresP-52

ɻ፶ ‫⌮ ࢧܨ‬Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭M1㸦ᓥ㔝◊✲ᐊ㸧᤾ᣠ҄ཋឬˡ‫ ˳ݰ‬La2-xSrxCuO4 ƴƓƚǔήᛔឪแ‫ܭܤ‬ႻƷႆᙸ
Discovery of photoinduced metastable phase in the cuprate superconductor La2-xSrxCuO4

P-53

˱ᕲ ࢧɟ ᕤᏛ⣔◊✲⛉࣭㟁Ẽ⣔ᕤᏛᑓᨷ࣭◊✲⏕㸦⏣୰࣭኱▮◊✲ᐊ㸧
Geometrical effect on spin accumulation signals in a diode structure fabricated on Si substrateP-54᣿‫ ܇‬ᇕᬔ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M2㸦༑಴㺃⸨ᒸ◊✲ᐊ㸧
(Nd1-xPrx)2Ir2O7 ƷȢȃȈᐮမໜᡈͯƴƓƚǔțȸȫȉȸȔȳǰјௐThe effect of hole doping nearby quantum critical point on (Nd1-xPrx)2Ir2O7

P-55

Andre E. B. Amend ⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭D1㸦⚟ᒣ◊✲ᐊ㸧
Scanning Tunneling Spectroscopy Study of Graphene Zigzag Nano-ribbons

P-56ெ೛ џ᠗ ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭M1㸦ᒾబ㺃୰㔝◊✲ᐊ㸧Magnetochiral Hall effect in a 2D trigonal superconductor

7

P-57

ສ߃ ਘ ᕤᏛ⣔◊✲⛉࣭࣐ࢸࣜ࢔ࣝᕤᏛᑓᨷ࣭D2㸦ᯞᕝ࣭ᚨᮏ◊✲ᐊ㸧
Bi-Sb ȈȝȭǸǫȫዌጂ˳ɶ᠃ˮƷᩓൢႎࣱឋ
Electrical properties of dislocations in Bismuth-Antimony topological insulators

P-58

ৎဋ ʰ పࢭࣥࢱ࣮࣭ᢏ⾡ᑓ㛛⫋ဨ‫׹ݱ‬ឬ˯ภᡲዓϬϵǷǹȆȠƷ᧏ႆ II
Development of a Compact and Continuous Sub-mK Refrigerator II

8ཱྀ㢌Ⓨ⾲

2࢖ࣉࢩࣟࣥ㓟໬㕲ࢼࣀ☢ᛶయࡢศගᏛⓗ࠾ࡼࡧ⌮ㄽⓗ◊✲Spectroscopic and theoretical study on epsilon iron oxide nanomagnets⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭኱㉺◊✲ᐊྜྷΎࡲࡾ࠼ࠊᑠᓟㄔஓࠊᡤ⿱Ꮚࠊ⏕஭㣕㫽ࠊ኱㉺ៅ୍㓟໬㕲 Fe2O3 ࡟ࡣ⤖ᬗᵓ㐀ࡀ␗࡞ࡿ」ᩘࡢከᙧࡀᏑᅾࡍࡿࡀࠊᙜ◊✲ᐊ࡛ࡣࠊFe2O3 ࡢ୰࡛ࡶᕼᑡ࡞┦࡛࠶ࡿ İ-Fe2O3 ࡢ༢┦ྜᡂ࡟ึࡵ࡚ᡂຌࡋࠊࡑࡢ☢Ẽ≉ᛶ࡜ࡋ࡚ᐊ

࡛ 20 kOe ࡜࠸࠺ᚑ᮶ࡢ㓟໬㕲☢ᛶ

ᮦᩱࡢ 3 ಸ௨ୖࡢ኱ࡁࡉࡢಖ☢ຊࢆ᭷ࡍࡿࡇ࡜ࢆぢฟࡋࡓ[1]ࠋ İ-Fe2O3 ࡣࠊࡑࡢ኱ࡁ࡞☢Ẽ␗᪉ᛶ࡟ࡼ
ࡾࠊ182 GHz ࡜࠸࠺㧗࿘Ἴࡢ㟁☢Ἴ྾཰≉ᛶࡶ♧ࡍ[2]ࠋࡉࡽ࡟ࠊFe ࢖࢜ࣥࢆ௚ࡢ㔠ᒓ࢖࡛࢜ࣥ⨨᥮ࡍࡿࡇ࡜࡟ࡼࡾࠊ☢Ẽ≉ᛶࡸ㟁☢Ἴ྾཰≉ᛶࢆᖜᗈࡃไᚚࡍࡿࡇ࡜ࡶྍ⬟࡛࠶ࡿ[3]ࠋᮏ◊✲࡛ࡣࠊGa ࢖࢜ࣥࢆ⨨᥮㔠ᒓ࡜ࡋ࡚⏝࠸ࡓ Ga ⨨᥮ᆺ İ-Fe2O3 ࡟ࡘ࠸࡚ࠊ➨୍ཎ⌮ࣇ࢛ࣀ࣮ࣥࣔࢻィ⟬ࢆ⾜࠸ࠊࡑࡢ᱁Ꮚ᣺
ື࠾ࡼࡧ⇕ຊᏛ≉ᛶࢆㄪ࡭ࡓࡢ࡛ሗ࿌ࡍࡿ[4]ࠋ
 ➨୍ཎ⌮ࣇ࢛ࣀ࣮ࣥࣔࢻィ⟬࡟⏝࠸ࡓ
İ-Ga0.5Fe1.5O3 ࡢ ⤖ ᬗ ᵓ 㐀 ࢆ ᅗ 1a ࡟ ♧ ࡍ ࠋ
İ-Ga0.5Fe1.5O3 ࡟ࡣࠊ3 ᮏࡢ㡢㡪ࣇ࢛ࣀ࣮ࣥࣔࢻ࡜
117 ᮏࡢගᏛࣇ࢛ࣀ࣮ࣥࣔࢻࡀ࠶ࡾࠊFe ࡜ Ga ࡢືࡁࡀ୺࡜࡞ࡗ࡚࠸ࡿࣇ࢛ࣀ࣮ࣥࣔࢻࡣ 20–370
cmí1 ࡢప࢚ࢿࣝࢠ࣮㡿ᇦ࡟ᏑᅾࡋࠊO ࡢືࡁ࡟㉳ᅉࡍࡿࣇ࢛ࣀ࣮ࣥࣔࢻࡣ 370–720 cmí1 ࡢ㧗࢚ࢿࣝࢠ࣮㡿ᇦ࡟Ꮡᅾࡍࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋIR άᛶࡢගᏛࣇ࢛ࣀ࣮ࣥࣔࢻ࠿ࡽࢫ࣌ࢡࢺࣝࢆࢩ࣑࣮ࣗࣞࢩ
ࣙࣥࡋࡓ࡜ࡇࢁᅗ 1b(⣽⥺)ࡢࢫ࣌ࢡࢺࣝࡀᚓࡽࢀ
ࡓࠋࡇࢀࡽࡢࣇ࢛ࣀ࣮ࣥࣔࢻࢆᐇ㦂ⓗ࡟ほࡍࡿࡓࡵ࡟ࠊİ-Ga0.48Fe1.52O3 ࡢ Far-IRࠊMid-IR ࢫ࣌ࢡࢺࣝࢆᐃࡋࡓ࡜ࡇࢁࠊィ⟬࡟ࡼࡾᚓࡽࢀࡓࢫ࣌ࢡ

ࢺࣝ࡜Ⰻ࠸୍⮴ࢆ♧ࡋ࡚࠸ࡓ(ᅗ 1b, ኴ⥺)ࠋຍ࠼࡚ࠊࣇ࢛ࣀ࣮ࣥࣔࢻィ⟬࡟ࡼࡾࠊ᱁Ꮚẚ⇕(Cvib)➼ᅗ 1. Ga ⨨᥮ᆺ࢖ࣉࢩࣟࣥ㓟໬㕲(İ-Ga0.5Fe1.5O3)ࡢ
(a) ⤖ᬗᵓ㐀࠾ࡼࡧ (b) ᐇ ࡢ㉥እ྾཰ࢫ࣌ࢡࢺ
ࣝ(ኴ⥺)࡜ࣇ࢛ࣀ࣮ࣥࣔࢻィ⟬࡟ࡼࡾᚓࡽࢀࡓ㉥እ྾཰ࢫ࣌ࢡࢺࣝ(⣽⥺)ࠋࡢ⇕ຊᏛࣃ࣓࣮ࣛࢱࢆィ⟬ࡋࡓࠋİ-Ga0.48Fe1.52O3 ࡢẚ⇕ᐃ࡟ࡼࡿᐇ㦂⤖ᯝ࡜୍㈏ᛶࡢ࠶ࡿィ⟬⤖ᯝ࡜࡞ࡗ࡚࠸ࡓࠋ

[1] J. Jin, S. Ohkoshi, K. Hashimoto, Adv. Mater., 16, 48 (2004).
[2] M. Yoshikiyo, K. Yamada, A. Namai, S. Ohkoshi, J. Phys. Chem. C, 116, 8688 (2012).
[3] S. Ohkoshi, S.Kuroki, S. Sakurai, K. Matsumoto, K. Sato, S. Sasaki, Angew. Chem. Int. Ed., 46, 8392 (2007).
[4] S. Ohkoshi, M. Yoshikiyo, Y. Umeta, M. Komine, R. Fujiwara, H. Tokoro, K. Chiba, T. Soejima, A. Namai, Y.
Miyamoto, T. Nasu, J. Phys. Chem. C, 121, 5812 (2017).

10

2-
ࡑࡢሙ㟁Ẽఏᑟ ᐃ࡟ࡼࡿ༙ᑟయᇶᯈୖࡢ Pb ㉸ⷧ⭷࡟࠾ࡅࡿ㉸ఏᑟ≉ᛶSuperconductivity of Pb ultrathin film on semiconductor substrates
studied by in-situ transport measurementsᮾி኱Ꮫ኱Ꮫ㝔⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ 㛗㇂ᕝಟྖ◊✲ᐊ㐲ᒣᬕᏊ㻴㻚㻌㻴㼡㼍㼚㼓㻘୰ᮧ཭ㅬ㧗ᒣ࠶࠿ࡾ㛗㇂ᕝಟྖ

㏆ᖺࠊ༙ᑟయᇶᯈୖ࡟ᡂ㛗ࡋࡓ 1㹼ᩘཎᏊᒙࡢ 2 ḟඖ㉸ᵓ㐀࡟࠾ࡅࡿ㉸ఏᑟ≉ᛶࡀὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋ
2 ḟඖࡢ㉸ఏᑟ࡛ࡣ 3 ḟඖ⣔ࡢሙྜ࡜␗࡞ࡿ≉ᛶࡀሗ࿌ࡉࢀ࡚࠾ࡾࠊࡑࡢ㉳※ゎ᫂࡟ྥࡅࡓ◊✲ࡀ┒ࢇ࡟⾜ࢃࢀ࡚࠸ࡿࠋ㖄(Pb)ࡣ 3 ḟඖ⤖ᬗࡢሙྜ 7.2 K ࡛㉸ఏᑟ࡟㌿⛣ࡍࡿࡀࠊ༙ᑟయୖࡢ㉸ⷧ⭷ࡸ㉸ᵓ㐀ࡢሙྜࡣᇶᯈࡢ✀㢮ࡸ⭷ཌࡢ㐪࠸࡟ࡼࡗ࡚ᵝࠎ࡞ 2 ḟඖᵓ㐀ࢆᙧᡂࡋࠊࡑࡢ㍺㏦≉ᛶࡣᵓ㐀࡟౫Ꮡࡋ࡚␗࡞ࡿࠋSi ୖ࡟ᡂ㛗ࡉࡏࡓ Pb ⷧ⭷ࡢሙྜࠊ4/3 ཎᏊᒙ(ML)ࡢ⭷ཌ࡛ striped incommensurate (SIC)ᵓ㐀
ࡀࠊ6/5 ML ࡛√3x√7 ᵓ㐀ࡀᚓࡽࢀࠊࡑࢀࡒࢀ 1.83 K ࡜ 1.52 K ࡛㉸ఏᑟ࡟㌿⛣ࡍࡿ[1]ࠋࡋ࠿ࡋࠊPb ⷧ⭷ࡢ㉸ఏᑟ≉ᛶ࡟㛵ࡍࡿ◊✲ࡢከࡃࡀ Si ᇶᯈࢆᑐ㇟࡜ࡋ࡚࠾ࡾࠊྠࡌ༙ᑟయ࡛࠶ࡿ Ge ᇶᯈୖࡢ 2 ḟ
ඖ Pb ㉸ᵓ㐀࡟㛵ࡍࡿ◊✲ࡣᑡ࡞ࡃ[2]ࠊࡑࡢఏᑟ≉ᛶࡢヲ⣽ࡣᮍࡔゎ᫂ࡉࢀ࡚࠸࡞࠸ࠋཎᏊᒙ㉸ᵓ㐀࡛ࡣࠊᇶᯈ࡜ࡢ┦஫స⏝ࡀ㟁Ꮚ≧ែࡸ㍺㏦≉ᛶ࡟ᐤ୚ࡍࡿࡇ࡜ࡀ♧၀ࡉࢀ࡚࠾ࡾ[3]ࠊ≀ᛶࡢ῝࠸⌮ゎ࡟ࡣࠊᇶᯈࡢ㐪࠸ࢆẚ㍑ࡋࡓ㆟ㄽࡀ㔜せ࡛࠶ࡿ࡜⪃࠼ࡽࢀࡿࠋ
ᮏ◊✲࡛ࡣࠊ⾲㠃ᵓ㐀ࡸᇶᯈࡢ✀㢮ࡀ Pb ࡢ 2 ḟඖఏᑟ≉

1ML : Non-SCᛶ࡟୚࠼ࡿᙳ㡪ࢆ᫂ࡽ࠿࡟ࡍࡿࡓࡵࠊGe ᇶᯈୖࡢ Pb ㉸ⷧ⭷࡟࠾࠸࡚ᴟప
ࡢ㝿ࡣࠊᇶᯈ

ࡑࡢሙ㟁Ẽఏᑟ

ᐃࢆ⾜ࡗࡓࠋⷧ⭷ᡂ㛗ᗘ࡜⵨╔㔞࡟ࡼࡗ࡚␗࡞ࡗࡓ⾲㠃ᵓ㐀ࡀᚓ

Fitting curveࡽࢀࡿࠋᮏ◊✲࡛ࡣ Ge(111)⾲㠃ୖ࡟ప ࡛ Pb ࢆ⵨╔ࡍࡿ

3ML : SC㻌ࡇ࡜࡛ incommensurate ࡞ I(1x1)ᵓ㐀[4]ࢆࠊᐊ ࡛ 4/3 ML ⵨╔ࡍࡿࡇ࡜࡛ SIC ᵓ㐀ࢆᡂ㛗ࡉࡏࡓࠋసᡂࡋࡓヨᩱࡣ㉸㧗┿✵ୗ࡛

Tc = 3.58 K㻌

ᐃᵴࡲ࡛㍺㏦ࡍࡿࡇ࡜࡛ࠊ኱Ẽ᭚㟢࡞ࡃᐇ㦂ࢆ⾜ࡗࡓࠋᅗ 1 ࡟ࠊ⭷ཌࡢ␗࡞ࡿ I(1x1)ᵓ㐀࡟࠾࠸࡚ ᐃࡋࡓ㟁Ẽఏᑟࡢ ᗘ౫Ꮡᛶࢆ♧ࡍࠋ1 ML ⷧ⭷ࡣ 0.8 K ௨ୖ࡛㉸ఏᑟࢆほ ࡛ࡁ࡞࠿ࡗࡓࡀࠊ3 ML ⷧ⭷ࡣ㉸ఏᑟ࡛࠶ࡿࡇ࡜
ࢆ♧ࡍࢮࣟ᢬ᢠࡀࡣࡗࡁࡾ࡜☜ㄆࡉࢀࡓࠋ2 ḟඖ㉸ఏᑟࡢ⌮ㄽᘧࢆ⏝࠸ࡓࣇ࢕ࢵࢸ࢕ࣥࢢࡼࡾࠊ㉸ఏᑟ㌿⛣ ᗘࡣ 3.58

ᅗ 1. I(1x1)-Pb/Ge(111) 1ML ࡜ 3ML ࡢࢩ࣮ࢺ᢬ᢠࡢᗘ౫Ꮡᛶࠋ㯮⥺ࡣࣇ࢕ࢵࢸ࢕ࣥࢢ᭤⥺ࢆ♧ࡍࠋK ࡜ぢ✚ࡶࡗࡓࠋᮏⓎ⾲࡛ࡣⷧ⭷ࡸ㉸ᵓ㐀ࠊᓥ≧ᵓ㐀࡞࡝࠸ࡃࡘ࠿ࡢ Pb/Ge 2 ḟඖᵓ㐀ࡢఏᑟ ᐃ⤖ᯝࡢヲ⣽ࢆሗ࿌ࡋࠊSi ᇶᯈ࡟࠾ࡅࡿ◊✲࡜ẚ㍑ࡋࠊᇶᯈ࡜㉸ఏᑟ≉ᛶࡢ㛵ಀᛶ࡟ࡘ࠸࡚㆟ㄽࡍࡿࠋ[1] T. Zhang, et al., Nature Phys. 6, 104-108 (2010). [2] S. Hatta, et al., Phys. Rev. B 90, 245407 (2014).
[3] S. He, et al., Nature Mat. 12, 605 (2013).

[4] S. J. Tang, et al., Phys. Rev. Lett. 107, 066802 (2011).

11

2-
ᒙ≧≀㉁ࡢప࢟ࣕࣜ࢔㡿ᇦ࡟࠾ࡅࡿᙉ⤖ྜ 2 ḟඖ㉸ఏᑟ
Strong-coupling 2D superconductivity
in the low carrier density regime of layered materialsᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷᒾబ࣭୰㔝◊✲ᐊ ᮾ໭኱㔠◊ ᗈ኱㝔ᕤ ி኱㝔⌮ ⌮◊ &(06୰ᕝ⿱἞ ᩪ⸨ඃ 㔝ᓥຮ ≟୸ၨ ᒣ୰᫛ྖ ➟ཎ⿱୍ ᒾబ⩏ᏹ ࢟ࣕࣜ࢔ࢻ࣮ࣆࣥࢢࡣ㉸ఏᑟࢆㄏ㉳࣭ไᚚࡍࡿ᭱ࡶ୍⯡ⓗ࡞ᡭἲࡢ㸯ࡘ࡛࠶ࡾࠊࡑࢀ࡟ࡼࡗ࡚ከᩘࡢ
㠀ᚑ᮶ᆺ㉸ఏᑟࡀⓎぢࡉࢀ࡚ࡁࡓࠋ୰࡛ࡶࢃࡎ࠿࡞ࢻ࣮ࣉ㔞࡛Ⓨ⌧ࡍࡿప࢟ࣕࣜ࢔㉸ఏᑟ࡟࠾࠸࡚ࡣࠊ
㌿⛣ ᗘ Tc ௨ୖ࡛ࡢ㟁Ꮚᑐᙧᡂ࡞࡝ࡢ⯆࿡῝࠸ᛶ㉁ࡀሗ࿌ࡉࢀࠊὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋ
ᮏㅮ₇࡛ࡣࠊᒙ≧❅໬≀ HfNCl, ZrNCl ࡟࠾ࡅࡿప࢟ࣕࣜ࢔㉸ఏᑟࢆሗ࿌ࡍࡿࠋ㟁Ẽ஧㔜ᒙࢺࣛࣥࢪࢫ
ࢱ㸦EDLT㸧ᵓ㐀ࢆᛂ⏝ࡋࡓ༢⤖ᬗ࢖ࣥࢱ࣮࣮࢝ࣞࢩࣙࣥࢹࣂ࢖ࢫ[1]ࢆ⏝࠸ࠊࢤ࣮ࢺ㟁ᅽ࡟ࡼࡿࢻ࣮ࣉ
㔞ไᚚࢆ⾜ࡗࡓࠋᅗ࡟♧ࡋࡓࡼ࠺࡟ࠊపࢻ࣮ࣉ㡿ᇦ࡟࠾ࡅࡿ≉␗࡞ Tc ࡢୖ᪼࡟ࡼࡗ࡚ࠊHfNCl ࡛ࡣ
Tc = 25 K ࡢ㉸ఏᑟࡀほ ࡉࢀࡓࠋ㟁Ẽ᢬ᢠ ᐃࠊࢺࣥࢿࣝศග ᐃࡢ⤖ᯝ࠿ࡽࠊࡇࡢ Tc ୖ᪼ࡣ㉸ఏᑟࡢ
2 ḟඖ໬࣭ᙉ⤖ྜ໬ࢆకࡗ࡚࠸ࡿࡇ࡜ࡶ᫂ࡽ࠿࡟࡞ࡗࡓࠋࡇࢀࡽࡢ⤖ᯝࢆࡶ࡜࡟ࠊᒙ≧❅໬≀࡟࠾ࡅࡿ㉸ఏᑟᶵᵓ࡟ࡘ࠸࡚㆟ㄽࡍࡿ࡜࡜ࡶ࡟ࠊ㧗࠸ Tc ࢆᣢࡘప࢟ࣕࣜ࢔㉸ఏᑟయ࡜ࡋ࡚ࡢᒎᮃ࡟ࡘ࠸࡚ࡶ㆟ㄽࡋࡓ࠸ࠋᅗ((a) ᒙ≧❅໬≀ HfNCl, ZrNCl ࡢ⤖ᬗᵓ㐀ࠋ(bb)ࢻ࣮ࣉ㔞࡟ᑐࡍࡿ┦ᅗࠋࢢ࣮ࣞ
ࡢⅬࡣከ⤖ᬗ࡟࠾ࡅࡿ⤖ᯝ[2,3]ࠋ
[1] W. Shi et al., Sci. Rep. 5, 12534 (2015), [2] Y. Taguchi et al., Phys. Rev. Lett. 97, 107001 (2006),[3] T. Takano et al., Phys. Rev. Lett. 100, 247005 (2008).

12

2
㧗ᙉᗘࢸࣛ࣊ࣝࢶἼບ㉳࡟ࡼࡿ d Ἴ㉸ఏᑟయ Bi2Sr2CaCu2O8+x ࡟࠾ࡅࡿࣄࢵࢢࢫ࣮ࣔࢻࡢほHiggs mode in a d-wave superconductor Bi2Sr2CaCu2O8+x excited by an intense
terahertz pulseᮾ኱⌮ 1, ⌮◊ 2, JST ࡉࡁࡀࡅ 3, ࣈࣝࢵࢡ࣊ࣈࣥᅜ❧◊ 4, ETH5, ⏘⥲◊ 6,ࣃ࣭ࣜࢹ࢕ࢻࣟ኱ 7, ᮾ኱ప ࢭ 8
຾ぢᜏኴ 1, ㎷┤ே 2, ℈⏣⿱⣖ 1, ᯇỌ㝯భ 1,3, R. D. Zhong4, J. Schneeloch4, G. D. Gu4,
㟷ᮌ⚽ኵ 1,5,6, Y. Gallais1,7,8, ᓥ㔝ு 1,8
 ㏆ᖺ s Ἴ㉸ఏᑟయ࡟࠾࠸࡚ࠊ㧗ᙉᗘࢸࣛ࣊ࣝࢶ(THz)㟁☢Ἴࣃࣝࢫࢆ⏝࠸ࡓᐇ㦂࡟ࡼࡾࠊ㉸ఏᑟࡢ࣮࢜ࢲ࣮
ࣃ࣓࣮ࣛࢱ࣮ࡢ᣺ᖜࡢ᣺ືࠊ࠸ࢃࡺࡿࣄࢵࢢࢫ࣮ࣔࢻࡢほ ࡀ࡞ࡉࢀࠊࡉࡽ࡟ࣄࢵࢢࢫ࣮ࣔࢻࡀ THz 㟁☢Ἴ࡜ 2 ḟࡢ㠀⥺ᙧගᏛ㐣⛬࡛⤖ྜࡍࡿࡇ࡜ࡀ᫂ࡽ࠿࡟ࡉࢀࡓ[1]ࠋ௨᮶ࠊࣄࢵࢢࢫ࣮ࣔࢻࡢほ ࡣࠊ㉸ఏᑟ࣮࢜ࢲ
࣮ࣃ࣓࣮ࣛࢱ࣮ࢆ㧗࠸᫬㛫ศゎ⬟࡛ගᏛⓗ࡟᳨ฟࡍࡿ᪂ࡋ࠸ᡭἲ࡜ࡋ࡚㧗࠸ὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋ౛࠼ࡤࠊ㖡㓟໬≀࡟௦⾲ࡉࢀࡿ d Ἴ㉸ఏᑟయ࡟࠾࠸࡚ࡣࠊ㟁ⲴᐦᗘἼ࡞࡝ࡢ㉸ఏᑟ࡜➇ྜࡍࡿ⛛ᗎࡢゎ᫂ࡸࠊࡑࢀࡽከ㔜⛛ᗎࡢගไᚚࡢྍ⬟ᛶࡀᶍ⣴ࡉࢀ࡚࠾ࡾࠊࣄࢵࢢࢫ࣮ࣔࢻࡢほ ࡣࡑࡢᙉຊ࡞ࣉ࣮ࣟࣈ࡜࡞ࡿࡇ࡜ࡀᮇᚅࡉࢀࡿࠋᐇ㝿 d Ἴ㉸ఏᑟయ࡟࠾ࡅࡿࣄࢵࢢࢫ࣮ࣔࢻ࡟㛵ࡋ࡚ࠊ㏆ᖺࠊከᩘࡢ⌮ㄽⓗ◊✲ࡀሗ࿌ࡉࢀࡿࡼ࠺࡟࡞ࡗࡓࡀࠊᐇ㦂࡛ࡣᮍࡔほ౛ࡣ࡞࠸ࠋࡑࡇ࡛ᡃࠎࡣࠊd Ἴ㉸ఏᑟయ

Bi2Sr2CaCu2O8+x ࡟࠾ࡅࡿࣄࢵࢢࢫ࣮ࣔࢻࡢほ ࢆ┠ᣦࡋࠊ㧗ᙉᗘ THz Ἴ࡟ࡼࡗ࡚ㄏ㉳ࡉࢀࡓ㉸ఏᑟࡢ㠀ᖹ⾮ࢲ࢖ࢼ࣑ࢡࢫࢆ㏆㉥እࣉ࣮ࣟࣈග(Ἴ㛗 800 nm)ࡢ཯ᑕ⋡ ᐃࢆ㏻ࡋ࡚ㄪ࡭ࡓࠋࡑࡢ⤖ᯝࠊs Ἴ㉸ఏᑟయ࡜ྠᵝ࡟ࠊ཯ᑕ⋡ኚ໬࡟ᅗ(a)ࡢࡼ࠺࡟ධᑕ THz 㟁ሙࡢ 2 ஌Ἴᙧ࡟㏣㝶ࡋ࡚᣺ືࡍࡿᛂ⟅ࢆぢฟࡋࡓࠋࡉࡽ࡟ࠊࡑࡢ᣺ືࡣ㉸ఏᑟ㌿⛣
ᗘ Tc ௨ୗ࡛ᛴቑࡋࡓ㸦ᅗ(b)㸧
ࠋ཯ᑕ⋡ኚ໬ࡢࢲ࢖ࢼ࣑ࢡ
ࢫࡣࣉ࣮ࣟࣈගࡢ೫ගゅᗘ࡟↓౫Ꮡ࡞ A1g ᡂศ࡜౫Ꮡࡍࡿ
B1g ᡂศ࡟ศゎ࡛ࡁࡿࡇ࡜ࠊṇᏍࢻ࣮ࣉ⃰ᗘࢆኚ໬ࡉࡏ࡚
ࡶ A1g ᡂศࡀᖖ࡟ᨭ㓄ⓗ࡛࠶ࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋ⌮ㄽィ⟬࡜ࡢヲ⣽࡞ẚ㍑࠿ࡽࠊࡇࡢ A1g ᡂศࡀࣄࢵࢢࢫ࣮ࣔࢻ࡟⏤᮶ࡍࡿࡇ࡜ࢆ᫂ࡽ࠿࡟ࡋ [2]ࠊd Ἴ㉸ఏᑟయ࡛ึࡵ࡚ࣄࢵ
ࢢࢫ࣮ࣔࢻࡢほ ࡟ᡂຌࡋࡓࠋㅮ₇࡛ࡣࡑࡢヲ⣽ࢆሗ࿌ࡍࡿࠋᅗ㸸(a) ᭱㐺ࢻ࣮ࣉヨᩱ࡟࠾ࡅࡿ THz Ἴບ㉳ᚋࡢ཯ᑕ⋡ኚ໬ࡢࢲ࢖ࢼ࣑ࢡࢫ㸦A1g ᡂศ㸧ࠋ[1] R. Matsunaga et al., Science 345, 1145 (2014)(b) ཯ᑕ⋡ኚ໬ࡢ A1g ᡂศࡢ ᗘ౫Ꮡᛶ࡜ d Ἴ[2] K. Katsumi et al., arXiv1711.04923, (2017)㉸ఏᑟࢠࣕࢵࣉࡢ᣺ືࡢᶍᘧᅗࠋ

13

2-
㉸ὶື࣒࣊ࣜ࢘ࡢࣇ࢕࣒ࣝࣇ࣮ࣟࡢᚊ㏿࣓࢝ࢽࢬ࣒
Rate Limiting Mechanism of Film Flow in Superfluid Helium⌮Ꮫ⣔◊✲⛉࣭≀⌮Ꮫᑓᨷ࣭⚟ᒣ◊✲ᐊ Aࠊప ࢭࣥࢱ࣮BᏱబ⨾₶ Aࠊᯇ஭᭸⿱ Aࠊ⚟ᒣᐶ A,B㉸ὶື 4He ࡣ⢓ᛶࡀ࡞࠸ࡓࡵࠊ⵹ࡢ࡞࠸ᐜჾ࡟ධࢀࡿ࡜ࠊቨ㠃࡟྾╔ࡋࡓ⭷ཌ 30 nm ⛬ᗘࡢⷧ⭷ࢆఏࡗ࡚ὶฟࡋ࡚ࡋࡲ࠺ࠋ
ࠕࣇ࢕࣒ࣝࣇ࣮ࣟࠖ࡜
࿧ࡤࢀࡿࡇࡢ⌧㇟ࡣ㉸ὶືࡢࢹࣔࣥࢫࢺ࣮ࣞࢩࣙࣥᐇ㦂ࡢᐃ␒ࡢ୍ࡘ࡛࠶
ࡿࠋࡇࡢ࡜ࡁ༢఩᫬㛫࠶ࡓࡾ࡟༢఩ᐜჾ࿘㛗ࢆὶࢀฟࡿὶ㔞㸦ࣇ࣮࣮ࣟࣞ
ࢺ㸧ࡣࠊᐜჾᮦ㉁࡟ࡣ౫Ꮡࡋ࡞࠸[1]ࠋ࡜ࡇࢁࡀࠊᐜჾ⾲㠃࡟ᅛయ✵Ẽࡢⷧ⭷ࢆ྾╔ࡉࡏࡿ࡜ࠊࣇ࣮࣮ࣟࣞࢺࡀ㸯᱆௨ୖቑຍࡍࡿࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿ
[2]ࠋࡑࡢཎᅉ࡜ࡋ࡚ࠊᐜჾቨࢆ⢒ࡃࡋࡓࡇ࡜࡟ࡼࡿ᭷ຠ࿘㛗ࡢቑຍ࡜ࠊ㔞Ꮚᅗ 1 ࣇ࢕࣒ࣝࣇ࣮ࣟ
ࡢ࢖࣓࣮ࢪࡢࣆࣥࢽࣥࢢࡢᙉࡉࡀኚ໬ࡋࡓࡇ࡜࡟ࡼࡿ⮫⏺㏿ᗘࡢቑຍ࡞࡝ࡀ⪃࠼ࡽࢀࡿࡀࠊලయⓗ࡞ᚊ㏿ᶵᵓࡣ᫂ࡽ࠿࡟࡞ࡗ࡚࠸࡞࠿ࡗࡓࠋ
ࡑࡇ࡛ᡃࠎࡣࠊᅛయ✵Ẽࡢ௦ࢃࡾ࡟㖟ᚤ⢏Ꮚ㸦┤ᚄ

0.8

ቨ⾲㠃ࡢ࣑ࢡࣟ࡞ᵓ㐀ࡸ⢒ࡉࢆ኱ࡁࡃኚ໬ࡉࡏࠊࣇ࣮ࣟ
࣮ࣞࢺ࡜ࡑࡢ ᗘ౫Ꮡᛶࢆㄪ࡭ࡓࠋSEM ほᐹ࡜❅⣲➼྾╔ἲ࡟ࡼࡿ⾲㠃✚ ᐃ࠿ࡽᵓ⠏ࡋࡓ⾲㠃ᵓ㐀ࡢࣔࢹࣝ࡟ᇶ࡙࠸࡚࣑ࢡࣟ࡞ᐜჾ࿘㛗࡟࠶ࡓࡿ᭷ຠ࿘㛗ࢆぢ✚ࡶjeff (T) / jeff (0)100 nm㸧࡜ከᏍ㉁࢞ࣛࢫ㸦⣽Ꮝᚄ 0.5ࠊ1 μm㸧ࢆ⏝࠸࡚

b=200 nmb=20 nmb=2 nmb=0.6 nm0.4

ࡿ࡜ࠊT = 2.0 K ࡛ࡢࣇ࣮࣮ࣟࣞࢺࡣ 2 ᱆௨ୖ࡟ࢃࡓࡗ࡚

01.6

᭷ຠ࿘㛗࡟࡯ࡰẚ౛ࡍࡿࡇ࡜ࡀศ࠿ࡗࡓࠋࡇࡢ஦ᐇࡣ᭷
ຠ࿘㛗ࣔࢹࣝࢆᨭᣢࡍࡿ⤖ᯝ࡛࠶ࡿࠋࡉࡽ࡟ࠊ༢఩᭷ຠ
࿘㛗࠶ࡓࡾࡢὶ㔞㸦᭷ຠࣇ࣮࣮ࣟࣞࢺ㸧ࡣᐜჾࡢᮦ㉁ࡸ⾲㠃ࡢᵓ㐀࡟ࡼࡽࡎࠊnm ࢧ࢖ࢬࡢࣆࣥࢽࣥࢢࢧ࢖
ࢺ࠿ࡽࡢ㔞Ꮚ ࡢ⬺㞳࡛つᐃࡉࢀࡿ㉸ὶື⮫⏺㏿ᗘ
[3]࡛ㄝ࡛᫂ࡁࠊ

=

1.8

T (K)

2

2.2

ᅗ 2 T = 0 ࡢ್࡛つ᱁໬ࡋࡓ᭷ຠࣇ࣮ࣟ
࣮ࣞࢺࡢ ᗘ౫Ꮡᛶ࡜⌮ㄽⓗ⮫⏺㏿ᗘ࠿ࡽồࡵࡓ᭤⥺ࠋb ࡣ ᚰ༙ᚄࡢ኱ࡁࡉࠋ

(⭷ཌ:dࠊ㉸ὶືᐦᗘ: )࡜࠿ࡅࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋࡇࡢ⮫⏺㏿ᗘࡢ ᗘ౫Ꮡᛶࡣ⮫⏺㏿ᗘࢆỴᐃࡍࡿ ᚰ༙ᚄࡢ ᗘ౫Ꮡᛶ࡟୍⮴ࡋ࡚࠸ࡿࠋ
[1] R. S. Chandrasekhar and K. Mendelssohn, Proc. Phys. Soc. A65, 226 (1952).
[2] R. Bowers and K. Mendelssohn, Proc.Phys.Soc. A63,1318 (1950).
[3] K. W. Schwarz, Phys. Rev. B 31, 5782 (1985).
[4] J. Daunt and K. Mendelssohn, Proc. Roy. Soc. London 170, 439 (1939). R.K. Waring, Phys. Rev. 99, 1704
(1955).

14

O-
3E%L7H ⣔ࢺ࣏ࣟࢪ࢝ࣝ⤯⦕యࡢస〇࡜ࣂࣝࢡ⤯⦕ᛶFabrication of PbBi2Te4-system topological insulatorsand their bulk resistivityᕤᏛ⣔◊✲⛉࣐ࢸࣜ࢔ࣝᕤᏛᑓᨷᯞᕝ◊✲ᐊ᭹㒊⿱ஓ ᚨᮏ᭷⣖ᯞᕝᆂ୍
ࢺ࣏ࣟࢪ࢝ࣝ⤯⦕య㸦Topological Insulator, TI㸧ࡣ 2005ᖺ࡟⌮ㄽⓗᥦၐࡀ࡞ࡉࢀࠊ2007ᖺ࡟ᐇ㦂ⓗ࡟Ꮡᅾࡀ☜ㄆࡉࢀࡓẚ㍑ⓗ᪂ࡋ࠸≀㉁⩌࡛࠶ࡿࠋTI⾲㠃ୖ࡟ࡣ஧ḟඖ㟁ᏊࡀᏑᅾࡋࠊ㔞ᏊຊᏛⓗ఩┦ᅉᏊ㸦࣮࣋ࣜ఩┦㸧ࡢຠᯝ࡟ࡼࡾ㧗࠸⛣ືᗘࢆࡶࡕࠊpᆺ nᆺࡢ࢟ࣕࣜ࢔ไᚚࡶ㟁⏺ຠᯝ࡟ࡼࡗ࡚ᐜ᫆࡟⾜࠼ࡿࠋࡇࢀࡽࢹ࢕ࣛࢵࢡ⢏Ꮚ࡟ඹ㏻࡞ᛶ㉁࡟ຍ࠼ࠊTI⾲㠃࡛ࡣࢫࣆࣥ೫ᴟࡀ⌧ࢀࡿ࡜ண᝿ࡉࢀ࡚࠾ࡾࠊ
㏆ᖺᐇ㦂ⓗ࡟ࡶ☜ㄆࡉࢀ࡚࠸ࡿࠋࡇࢀࡽࡢᛶ㉁࠿ࡽ TIࡣࠊࡇࢀࡲ࡛ࡢࢹࣂ࢖ࢫ࡜඲ࡃືసཎ⌮ࡀ␗࡞ࡿ㔞Ꮚ⌧㇟ࢹࣂ࢖ࢫࡸࠊࢫࣆࣥࢺࣟࢽࢡࢫࢹࣂ࢖ࢫ࡟ᛂ⏝ࡉࢀࡿࡇ࡜ࡀᮇᚅࡉࢀ࡚࠸ࡿࠋ ࡋ࠿ࡋ TIࡢከࡃࡢ⣔࡛ࡣࣂࣝࢡ⤯⦕ᛶࡀ☜ಖࡉࢀ࡚࠸࡞࠸ࡓࡵࠊ≉Ṧ࡞ఏᑟࡢほ ࡸ฼⏝ࡣ୍⯡ⓗ࡟㞴ࡋ࠸ࠋᐇ㝿࡟ࡇࢀࡲ࡛ࣂࣝࢡ⤯⦕య໬࡟ᡂຌࡋࡓ TIࡣ඲30✀୰ 3~4✀⛬ᗘ࡜ᑡ࡞࠸ࠋ୍᪉ࠊ㏆ᖺ
TIࡢ୍✀࡛࠶ࡿ PbBi2Te4ࡢ Biࢧ࢖ࢺࢆ Sb࡛⨨ࡁ᥮࠼ࡿࡇ࡜࡛㟁Ẽ≉ᛶࢆ nᆺ pᆺࡢ㛫࡛ไᚚ࡛ࡁࡿ࡜
ሗ࿌ࡉࢀࡓ[1]ࡀࠊࡇࢀࡲ࡛ࣂࣝࢡ⤯⦕యⓗ࡞ヨᩱࡢస〇࡟ࡣ⮳ࡗ࡚࠸࡞࠿ࡗࡓࠋࡑࡇ࡛ᙜ◊✲ᐊ࡛ࡣ
Sbศ⋡ࢆ⢭ᐦ࡟ไᚚࡋࡓࢧࣥࣉࣝࢆ⫱ᡂࡋࠊࣂࣝࢡ⤯⦕యⓗ࡞ Pb(Bi,Sb)2Te4ࢧࣥࣉࣝࡢస〇࡟ᡂຌࡋࡓ
㸦ᅗ1㸧[2]ࠋࡑࢀࡽࡣ≉Ṧ࡞☢Ẽ᢬ᢠࢆ♧ࡋࡓࡀ㸦ᅗ 2㸧ࠊࡇࡢ᣺ࡿ⯙࠸ࡣ 3ḟඖࡢᙅ཯ᒁᅾ࡛ㄝ࡛᫂ࡁ
ࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋⓎ⾲࡛ࡣ Pb(Bi,Sb)2Te4࡟ṧᏑࡍࡿࣂࣝࢡఏᑟࡢ࣓࢝ࢽࢬ࣒ࢆ㆟ㄽࡋࡓࡢࡕࠊ᪤Ꮡࡢ
TI࡛࠶ࡿ(Bi,Sb)2(Te,Se)3 ࢆࡋࡢࡄࣂࣝࢡ⤯⦕యᛶࢆ㐩ᡂࡍࡿࡓࡵࡢᮦᩱタィ࡟㛵ࡋ࡚㏙࡭ࡿࠋ

ᅗ 1㸸Pb(Bi1-xSbx)2Te4 ࡢ᢬ᢠ⋡ࡢ ᗘ౫Ꮡᛶ

ᅗ 2㸸Pb(Bi1-xSbx)2Te4 ࡢ≉Ṧ࡞☢Ẽ᢬ᢠ

[1] S.Souma et al., Phys. Rev. Lett. 108,116801(2012).
[2] Y. Hattori et al., Phys. Rev. Materials, 1, 074201(2017).

15

2-
ࢹ࢕ࣛࢵࢡ༙㔠ᒓ Cd3As2 ⷧ⭷࡟࠾ࡅࡿ㔞Ꮚ㍺㏦⌧㇟࡜ࢺ࣏ࣟࢪ࢝ࣝ┦㌿⛣
Quantum transport and topological phase transitionin Dirac semimetal Cd3As2 thin filmᕤᏛ⣔◊✲⛉ ≀⌮ᕤᏛᑓᨷ ᕝ㷂◊✲ᐊ 1ᮾி኱Ꮫ ≀ᛶ◊✲ᡤ 2, ⌮໬Ꮫ◊✲ᡤ ๰Ⓨ≀ᛶ⛉Ꮫ◊✲ࢭࣥࢱ࣮3す᪩㎮୍ 1, ᡴ⏣ṇ㍤ 1, ୰⃝భ௓ 1, ⛅ⴥ࿴ே 2, M. Kriener3, ᑠሯ⿱௓ 1, ୕Ꮿཌᚿ 2,⏣ཱྀᗣ஧㑻 3, ᚨỌᑗྐ 2, ᕝ㷂㞞ྖ 1,3ࢹ࢕ࣛࢵࢡ༙㔠ᒓ Cd3As2 ࡛ࡣࠊࣂࣝࢡࣂࣥࢻࡢ 3 ḟඖⓗ࡞஺ᕪⅬࡀ⤖ᬗࡢᑐ⛠ᛶ࡟ࡼࡗ࡚Ᏻᐃ໬ࡉࢀࠊࢢࣛࣇ࢙ࣥࡢ 3 ḟඖⓗᣑᙇ࡟┦ᙜࡋࡓ≉␗࡞㟁Ꮚᵓ㐀ࢆᙧᡂࡉࢀࡿ[1]ࠋࡇࡢࡓࡵࠊ
Cd3As2 ࡟࠾࠸࡚ࡣࠊ3 ḟඖࢹ࢕ࣛࢵࢡᛶ࡟⏤᮶ࡍࡿ࢝࢖ࣛࣝ␗
ᖖ࡞࡝ࡢࢺ࣏ࣟࢪ࢝ࣝ࡞㍺㏦⌧㇟ࡸࠊᑐ⛠ᛶ࣭ḟඖᛶ࣭ࢫࣆࣥ
㌶㐨┦஫స⏝ࡢኚ໬࡟కࡗࡓࢺ࣏ࣟࢪ࢝ࣝ┦㌿⛣⌧㇟ࡢⓎ⌧ࡀᮇᚅࡉࢀ࡚࠸ࡿ[2,3]ࠋᮏ◊✲࡛ࡣࠊCd3As2 ࡢ㧗ရ㉁ⷧ⭷ࢆస〇ࡋࠊ㛢ࡌ㎸ࡵຠᯝࡸ໬Ꮫ⨨᥮ࢆ⏝࠸ࡓ㟁Ꮚ┦ไᚚ࡟ࡼࡗ࡚ࠊ
ࢹ࢕ࣛࢵࢡ༙㔠ᒓ࡟ᮇᚅࡉࢀࡿ㔞Ꮚ㍺㏦⌧㇟ࢆヲ⣽࡟ㄪ࡭ࡓࠋ
ࣃࣝࢫ࣮ࣞࢨ࣮ሁ✚࡜㧗࢔ࢽ࣮ࣝࢆే⏝ࡋࡓᡂ⭷ᡭἲ࡟ࡼࡗ࡚ࠊ㧗ရ㉁࡞࢚ࣆࢱ࢟ࢩࣕࣝ Cd3As2 ⷧ⭷ࡢస〇ࡸ Zn ࢆ⏝ᅗ 1. (Cd1-xZnx)3As2 ⷧ⭷(⭷ཌ t = 34 nm,
x = 0.12)࡟࠾ࡅࡿ㔞Ꮚ࣮࣍ࣝຠᯝࠋ

࠸ࡓ⣔⤫ⓗ࡞໬Ꮫ⨨᥮࡟ᡂຌࡋࡓࠋ⭷ཌࡢⷧ࠸ヨᩱ࡟࠾࠸࡚ࡣࠊ
㛢ࡌ㎸ࡵຠᯝ࡟ࡼࡾ 2 ḟඖⓗ࡞㟁Ꮚ≧ែཬࡧ㔞Ꮚ࣮࣍ࣝ≧ែࡀᐇ⌧ࡍࡿࡇ࡜ࢆ᫂ࡽ࠿࡟ࡋ[4]ࠊZn ⨨᥮࡛ࡢప࢟ࣕࣜ࢔⃰ᗘ໬࡟ࡼࡗ࡚ࡣࠊ⭷ཌ 34 nm ࡟࠾࠸࡚ࡶ᫂░࡞㔞Ꮚ࣮࣍ࣝຠᯝࡢほ࡟ᡂຌࡋ࡚࠸ࡿ(ᅗ 1)ࠋࡲࡓࠊࢫࣆࣥ㌶㐨┦஫స⏝ࢆᙅࡵࡿ Zn⨨᥮ࡣࠊࢹ࢕ࣛࢵࢡ༙㔠ᒓ࠿ࡽ⮬᫂࡞⤯⦕య࡬ࡢࢺ࣏ࣟࢪ࢝ࣝ
┦㌿⛣ࢆㄏ㉳ࡍࡿࡇ࡜ࡀᮇᚅࡉࢀࡿࠋࡇࡢ┦㌿⛣㐣⛬࡟࠾࠸࡚ࠊ
⨨᥮㔞ࡢ␗࡞ࡿヨᩱ࡛ࡢ☢Ẽ᢬ᢠᐃࢆ㧗☢ሙࡲ࡛⾜࠺ࡇ࡜࡛ࠊ

ࢹ࢕ࣛࢵࢡ༙㔠ᒓ┦ࡢ࢝࢖ࣛࣝ␗ᖖ࡟⏤᮶ࡍࡿ㈇ᛶ☢Ẽ᢬ᢠࡀ⣔⤫ⓗ࡟ኚ໬ࡍࡿᵝᏊࢆ᫂ࡽ࠿࡟ࡋࡓ(ᅗ 2)ࠋⷧ⭷ヨᩱ࡟࠾ࡅࡿ
୍㐃ࡢ⤖ᯝࡣࠊࣂࣝࢡヨᩱࡀ୺࡞ᑐ㇟࡛࠶ࡗࡓࢹ࢕ࣛࢵࢡ༙㔠ᒓࡢ≀ᛶ᥈⣴࡟᪂ࡓ࡞ᒎ㛤ࢆࡶࡓࡽࡍ㔜せ࡞ᡂᯝ࡛࠶ࡿ࡜⪃࠼

ᅗ 2. (Cd1-xZnx)3As2 ⷧ⭷(t = 85~100 nm)
࡟࠾ࡅࡿᖹ⾜࡞㟁☢ሙୗ࡛ࡢ㈇ᛶ☢Ẽ᢬ᢠࡢ Zn ⨨᥮㔞౫Ꮡᛶࠋࡽࢀࡿࠋ
[1] Z. Wang et al., Phys. Rev. B 88, 125427 (2013). [2] M. Ninomiya et al., Phys. Lett. 130B, 389-396 (1983).
[3] Z. Wang et al., Phys. Rev. B 85, 195320 (2012).

[4] M. Uchida et al. Nat Commun. 8, 2274 (2017).

16

2-
Fe-based narrow-gap ferromagnetic semiconductors:
New materials for high-performance spintronic devicesᕤᏛ⣔◊✲⛉㟁Ẽ⣔ᕤᏛᑓᨷ ⏣୰኱▮◊✲ᐊ㻸㼑㻌㻰㼡㼏㻌㻭㼚㼔㻘㻌㻺㼓㼡㼥㼑㼚㻌㼀㼔㼍㼚㼔㻌㼀㼡㻘㻌㻼㼔㼍㼙㻌㻺㼍㼙㻌㻴㼍㼕㻘㻌⏣୰㞞᫂ Ferromagnetic semiconductors (FMSs) with high Curie temperature (TC) are highly desired for the realizationof semiconductor spintronic devices. So far, however, the mainstream study of FMSs is focused on Mn-doped III-V
FMSs whose TC is much lower than room temperature (RT) (the highest TC in (Ga,Mn)As is only 200 K).
Furthermore, because Mn atoms supply both spins and holes, the Mn-doped III-V FMSs are all p-type with holes in
the Mn-related impurity band (IB). Therefore it is challenging to understand the band structure and design
functional devices. To go beyond the existing Mn-doped III-V FMSs, there have been world-wide efforts to search
for new high-performance FMSs. These research works, inspired by the prediction of the mean-field Zener model[1], were mainly concentrated on wide-gap materials such as oxides and nitrides. However, reliable and systematic
results have not yet been presented.
In this study, we present an alternative approach by using Fe instead of Mn as the magnetic dopants innarrow-gap III-V semiconductors; InAs, GaSb, and InSb. Unlike Mn, Fe atoms are in the Fe3+ state substituting thegroup-III sites, which supply neither electrons nor holes. These Fe doped III-V semiconductors have two important
advantages over the Mn-doped counterparts: First, the carrier type (electrons or holes) can be controlled
independently by co-doping with appropriate nonmagnetic dopants. Second, these carriers, supplied bynonmagnetic dopants (not Fe) would reside in the conduction band (CB) or the valence band (VB) of the host
semiconductors and thus can move faster with higher coherency. Using low-temperature molecular beam epitaxy,
we have successfully grown both p-type FMS [(Ga,Fe)Sb [2]] and n-type FMSs [(In,Fe)As [3], (In,Fe)Sb [4]]. By
optimizing the growth conditions, a significant amount of Fe can be doped in III-V semiconductors while
maintaining the zinc-blende structure [Fig. 1(a), the Fe concentrations x are up to 9% in (In,Fe)As, 25% in(Ga,Fe)Sb, and 16% in (In,Fe)Sb)]. The most impressive result is the high TC of these materials: TC increases
monotonically with x; and there is a tendency that TC is higher in narrower-gap host semiconductors [Fig. 1(b)].
Intrinsic room-temperature ferromagnetism has been observed in (Ga1-x,Fex)Sb with x > 23% [2] and (In1-x,Fex)Sb
with x > 16% [4]. In n-type FMS (In,Fe)As, large s-d exchange interaction energy was estimated [5], and large
spontaneous spin splitting (30~50 meV at 3.5 K) in the CB was observed, which is the first in all FMSs [6]. These
results, contradicting the conventional mean-field Zener model, raise new issues in the magnetism of
semiconductors and indicate that the Fe-doped III-V FMSs are promising for high-performance spintronic devices.
Acknowledgements: This work was partly
supported by Grants-in-Aid for Scientific
Research (No. 26249039, No. 17H04922),
CREST of JST, and the Spintronics Research
Network of Japan (Spin-RNJ).

1. T. Dielt et al. Science 287, 1019 (2000).
2. N. T. Tu et al., PRB 92, 144403 (2015),
3.
4.
5.
6.

APL 108, 192401 (2016).
P. N. Hai, APL 101, 182403 (2012).
N. T. Tu et al., arXiv:1706.00735 (2017).
L. D. Anh et al., PRB 92, 161201(R) (2015)
L. D. Anh et al., Nat. Commun. 7, 13810(2016).

Fig. 1 (a) HR-(S)TEM images of (Ga,Fe)Sb, (In,Fe)As, and(In,Fe)Sb, respectively. (b) TC as a function of the Fe content x
in (In,Fe)Sb, (In,Fe)As, and (Ga,Fe)Sb.

17

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࣐ࣥ࢞ࣥ࣍࢘㓟ሷ࢞ࣛࢫࡢ☢Ẽⓗᛶ㉁Magnetic properties of manganese borate glasses⏕⏘ᢏ⾡◊✲ᡤ࣭≀㉁࣭⎔ቃ⣔㒊㛛࣭஭ୖ◊✲ᐊ୰ሯ♸Ꮚ࣭ᒸ⏣೺ኴ㑻࣭஭ୖ༤அ

࠙⥴ゝࠚ࢞ࣛࢫࡣࠊ⣖ඖ๓࠿ࡽᗈࡃ⏝࠸ࡽࢀ࡚ࡁࡓᮦᩱ࡛࠶ࡿࠋᆒ㉁ᛶࡀ㧗ࡃࠊຍᕤᡂᙧ࣭኱㠃✚໬ࡀᐜ࡛᫆
࠶ࡾࠊ⤌ᡂኚ໬࡟ࡼࡾ≀ᛶࢆ㐃⥆ⓗ࡟ኚ໬ࡉࡏࡽࢀࡿ࡜࠸࠺ࠊᕤᴗⓗ࡟ඃࢀࡓ≉ᚩࢆᣢࡘࠋࡋ࠿ࡋࠊග
Ꮫᮦᩱࡸ㟁Ꮚᮦᩱ࡜ࡋ࡚ࡣ᪤࡟ᗈࡃᛂ⏝ࡉࢀ࡚࠸ࡿ୍᪉࡛ࠊ☢ᛶᮦᩱ࡟㛵ࡋ࡚ࡣ࢞ࣛࢫᮦᩱࡢ☢Ẽⓗᛶ㉁࡟ࡘ࠸࡚ࡢヲ⣽࡞◊✲ࡑࡢࡶࡢࡀᑡ࡞࠸ࡢࡀ⌧≧࡛࠶ࡿࠋከࡃࡢ㓟໬≀⤖ᬗࡀつ๎ⓗ࡞ཎᏊ㓄ิࢆ཯ᫎࡋ࡚ᙉ☢ᛶయࡸ཯ᙉ☢ᛶయ࡞࡝࡟㌿⛣ࡍࡿ୍᪉࡛ࠊࡓ࠸࡚࠸ࡢ☢ᛶ࢞ࣛࢫࡣࣛࣥࢲ࣒࡞ཎᏊ㓄ิࢆ཯ᫎࡋ࡚ࢫࣆࣥࢢࣛࢫ┦࡟㌿⛣ࡍࡿࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋࢫࣆࣥࢢࣛࢫࡣࢫࣆࣥࡀࣛࣥࢲ࣒࡞᪉ྥࢆྥ࠸
࡚෾⤖ࡋࡓ≧ែ࡛࠶ࡾࠊ࢚࢖ࢪࣥࢢ࣭࣓࣮ࣔࣜຠᯝ࡞࡝ࡢ≉␗࡞⌧㇟ࢆ♧ࡍ[1,2]ࠋ࡜ࡾࢃࡅ࢞ࣛࢫᮦᩱ
ࡢ☢ᛶࡣ඾ᆺⓗ࡞ࣛࣥࢲ࣒☢ᛶయࡢほⅬ࠿ࡽࡶ⯆࿡῝࠸ࡀࠊ☢Ẽᵓ㐀ࡸ☢Ẽ㌿⛣ࡣ࡯࡜ࢇ࡝ゎ᫂ࡉࢀ࡚࠸࡞࠸ࠋᮏ◊✲࡛ࡣࠊ⁐⼥ᛴ෭ἲࢆ⏝࠸࡚࣐ࣥ࢞ࣥ࣍࢘㓟ሷ࢞ࣛࢫࢆస〇ࡋࠊ☢Ẽⓗᛶ㉁ࢆㄪ࡭ࡓࠋ
࠙ᐇ㦂ࠚ
xMnO-(100-x)B2O3 (x = 45, 50, 55) ࢞ࣛࢫࢆ⁐⼥ᛴ෭ἲ࡟ࡼࡾస〇ࡋࡓࠋMnCO3࠾ࡼࡧH3BO3⢊ᮎࢆ
10 gࡢ࢞ࣛࢫࡀᚓࡽࢀࡿࡼ࠺࡟⛗㔞ࠊΰྜࡋࡓᚋࠊ࣮࢝࣎ࣥࡿࡘࡰ࡟ධࢀࠊ4%H2/96%N2㞺ᅖẼࡢࢢࣟ࣮ࣈ࣎ࢵࢡࢫ୰࡛ࠊ1100 ℃࡛15ศ㛫⁐⼥ࡋࠊᛴ෭ࡋࡓࠋX⥺ᅇᢡ࡟ࡼࡾࠊ࢞ࣛࢫ໬ࡋ࡚࠸ࡿ࠿࡝࠺࠿
ࢆ☜ㄆࡋࡓࠋ㉸ఏᑟ㔞Ꮚᖸ΅ィࢆ⏝࠸࡚ࠊ☢໬⋡ࡢᗘ౫Ꮡᛶࢆㄪ࡭ࡓࠋ

࠙⤖ᯝ࡜⪃ᐹࠚ
45MnO·55B2O3 ࢞ࣛࢫࡢ┤ὶ☢໬⋡ࡢ ᗘ౫Ꮡᛶࢆ
ᅗ 1 ࡟♧ࡍࠋ㞽☢ሙ෭༷࡜☢ሙ෭༷ࡀ 3 K ࡟࠾࠸࡚ศ
ᒱࡋࠊศᒱࡢ㉳ࡇࡿ ᗘ࡛㞽☢ሙ෭༷ࡣࣆ࣮ࢡࢆ♧ࡋࡓࠋࡇࡢ⤖ᯝ࠿ࡽࠊ45MnO·55B2O3 ࢞ࣛࢫࡣࢫࣆࣥࢢࣛࢫ㌿⛣ࢆ♧ࡍ࡜⪃࠼ࡽࢀࡿࠋ

[1]H. Akamatsu, K. Tanaka, K. Fujita, and S. Murai,
Phys. Rev. B 74, 12411 (2006).
[2]H. Akamatsu, S. Oku, K. Fujita, S. Murai, and K.
Tanaka, Phys. Rev. B 80, 134408 (2009).

ᅗ 1. 45MnO·55B2O3 ࢞ࣛࢫࡢ┤ὶ☢໬⋡ࡢ
ᗘ౫Ꮡᛶ

18

O-10

࢔ࢥࣖ࢞࢖⛸ᰕᒙࡢ࢝ࣝࢧ࢖ࢺ⤖ᬗࡢḞ㝗࡟㛵ࡍࡿ◊✲
Study on the defects of calcite crystals in the prismatic layer ofPinctada fucata㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ࣭ศᯒ໬Ꮫ◊✲ᐊ㏆㒔ᾈஅࠊዟᮧ኱Ἑࠊ᰿ᓊ⍠⨾ࠊఀ⚟ఙ௓ࠊᑠᬽᩄ༤ࠊస⏣ᗉᖹࠊ㕥ᮌ㐨⏕ ㌾యື≀ࡢ㈅ẆࡣࠊⅣ㓟࢝ࣝࢩ࣒࢘ࢆ୺ᡂศ࡜ࡋ࡚࠸ࡿࡀࠊᚤ㔞ࡢ᭷ᶵᇶ㉁ࡀ↓ᶵ≀ࡢ⤖ᬗ໬ࢆཝᐦ
࡟ไᚚࡋࠊ✀࡟ᛂࡌࡓᵝࠎ࡞ᚤ⣽ᵓ㐀ࢆᙧᡂࡉࡏ࡚࠸ࡿࠋࡇࢀࡽࡢᚤ⣽ᵓ㐀ࡣඃࢀࡓᙉᗘࡸᰂ㌾ᛶ࡞࡝ࡢᶵ⬟ᛶࢆ᭷ࡍࡿࡓࡵࠊ᭷ᶵ↓ᶵ┦஫స⏝ࡢゎ᫂ࡣ᪂つᶵ⬟ᛶᮦᩱࡢ๰ฟ࡟⧅ࡀࡿࡇ࡜ࡀᮇᚅࡉࢀࡿࠋ
┿⌔㣴Ṫ࡟⏝࠸ࡽࢀ࡚࠸ࡿ࢔ࢥࣖ࢞࢖ࡢ㈅Ẇࡣࠊᰕ≧ࡢ࢝ࣝࢧ࢖ࢺࡀᐤࡾ㞟ࡲࡗࡓᵓ㐀࠿ࡽ࡞ࡿ⛸ᰕᒙࢆᣢࡘࠋ⛸ᰕᒙ࡛ࡣಶࠎࡢ⛸ᰕࡀཌ࠸᭷ᶵᇶ㉁ࡢᯟ⤌ࡳ࡟ᅖࡲࢀࠊ⻏ࡢᕢࡢࡼ࠺࡞ᵓ㐀ࢆࡋ࡚࠸ࡿࠋ㟁Ꮚ㢧ᚤ㙾ࢆ⏝࠸ࡓほᐹ࡟ࡼࡗ࡚ࠊ࢔ࢥࣖ࢞࢖⛸ᰕᒙ࢝ࣝࢧ࢖ࢺࡢෆ㒊࡟ࡣࠊ᭷ᶵ≀ࢆྵࡲ࡞࠸㠀⏕≀ⓗ࢝ࣝࢧ࢖ࢺ༢⤖ᬗ࡛ࡣぢࡽࢀ࡞࠸ᚤᑠ࡞⤖ᬗ᪉఩ࡢṍࡳࡀሗ࿌ࡉࢀ࡚࠸ࡿ[1]ࠋࡇࡢ⤖ᬗḞ㝗ࢆᣢࡘ࢝ࣝ
ࢧ࢖ࢺࡣ๭ࢀ࡟ࡃࡃ◳࠸࡜࠸࠺ᶵ⬟ⓗ≉ᚩࢆᣢࡘࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋࡉࡽ࡟⛸ᰕᒙ࢝ࣝࢧ࢖ࢺෆ࡛ࡣࠊ
⤖ᬗḞ㝗࡟ἢࡗ࡚᭷ᶵ≀ࣇ࢓࢖ࣂ࣮ࡀࢿࢵࢺ࣮࣡ࢡ≧࡟ศᕸࡋ࡚࠸ࡿࡇ࡜ࡀほᐹࡉࢀ࡚࠾ࡾ[2]ࠊḞ㝗ࡣࡇࡢ᭷ᶵ≀ࢿࢵࢺ࣮࣡ࢡ࡟ࡼࡗ࡚⏕ࡌࡿ࡜⪃࠼ࡽࢀ࡚࠸ࡿࠋࡋ࠿ࡋࠊࡇࢀࡲ࡛ᵝࠎ࡞㈅Ẇෆ᭷ᶵᇶ㉁ࡀ
ྠᐃࡉࢀ࡚࠸ࡿ୰࡛ࠊ᭷ᶵ≀ࢿࢵࢺ࣮࣡ࢡࡢᵓᡂᡂศࡣ୙࡛᫂࠶ࡾࠊ࡝ࡢࡼ࠺࡞స⏝࡛⤖ᬗḞ㝗ࡀᙧᡂࡉࢀࡿࡢ࠿ࡶ᫂ࡽ࠿࡟࡞ࡗ࡚࠸࡞࠸ࠋ
ᮏ◊✲࡛ࡣࡑࢀࡽࢆゎ᫂ࡍࡿࡓࡵࠊࡲࡎ࢝ࣝࢧ࢖ࢺࢆ㓑㓟࡛⬺⅊ࡋࢿࢵࢺ࣮࣡ࢡᡂศࢆᢳฟࡋࡓࠋIRࡸ LC/MS/MS ࢆ⏝࠸࡚ᡂศࢆゎᯒࡋࡓ࡜ࡇࢁࠊ୺ᡂศࡣከ⢾ࡢ࢟ࢳࣥ࡜ࠊ᭦࡟࢟ࢳࣥ࡟⤖ྜࡋ࡚࠸ࡿ࢟
ࢳࣥศゎ㓝⣲࡛࠶ࡿࡇ࡜ࡀุ᫂ࡋࡓࠋ㌾యື≀࡛ࡣ࢟ࢳࣥࡣ▼⅊໬ࡢ㊊ሙ࡜ࡋ࡚ࡼࡃ౑ࢃࢀ࡚࠸ࡿࡀࠊ
࢟ࢳࣥࢆศゎࡍࡿ㓝⣲ࡀ▼⅊໬࡟㛵ࢃࡗ࡚࠸ࡿ࡜࠸࠺ሗ࿌ࡣ࡯ࡰ↓࠸ࠋࢿࢵࢺ࣮࣡ࢡᡂศ࡜ࡋ࡚࢟ࢳࣥ
࡜࢟ࢳࣥศゎ㓝⣲ࡀྠᐃࡉࢀࡓࡇ࡜࠿ࡽࠊࡑࢀࡽࡢ᭷ᶵ≀ࡀ࡝ࡢࡼ࠺࡟࢝ࣝࢧ࢖ࢺࡢ⤖ᬗ໬࡟㛵ࢃࡗ࡚࠸ࡿ࠿ࢆㄪ࡭ࡿࡓࡵ in vitro ࡢⅣ㓟࢝ࣝࢩ࣒࢘⤖ᬗ໬ᐇ㦂ࢆ⾜ࡗࡓࠋࡲࡎࠊ࢟ࢳࣥࢆࢤࣝ໬ࡉࡏࡓ࢟ࢳࣥ
ࢤࣝ࡟࢟ࢳࣥศゎ㓝⣲ࢆຍ࠼࡚ 24 ᫬㛫཯ᛂࡉࡏࡓࠋ࢟ࢳࣥࡣศゎ࡟ࡼࡗ࡚⣽ࡃ࡞ࡗ࡚࠸ࡃ࡜⪃࠼ࡽࢀࡿࠋ
ࡑࡢᚋ࢟ࢳࣥࢤࣝෆ࡛Ⅳ㓟࢝ࣝࢩ࣒࢘ࢆ⤖ᬗ໬ࡉࡏࠊྜᡂࡋࡓ࢝ࣝࢧ࢖ࢺࢆ㟁Ꮚ㢧ᚤ㙾࡛ほᐹࡋࡓࠋ㓝⣲ࢆຍ࠼ࡎ࢟ࢳࣥࢤࣝࡢࡳࡢሙྜ࡛ࡣ㏻ᖖࡢ࢝ࣝࢧ࢖ࢺࡀᙧᡂࡉࢀࠊ㓝⣲⃰ᗘࡀୖࡀࡿ࡟ࡘࢀ⌫≧ࡢ࢝ࣝࢧ࢖ࢺ࡟ኚ໬ࡋࡓࠋࡲࡓ X ⥺ᅇᢡᐃ࡟ࡼࡗ࡚࢝ࣝࢧ࢖ࢺࡢ⤖ᬗḞ㝗ࡢ኱ࡁࡉࢆ⟬ฟࡋࡓ࡜ࡇࢁࠊ㓝⣲⃰ᗘࡀୖࡀࡿ࡟ࡘࢀ⤖ᬗḞ㝗ࡣ኱ࡁࡃ࡞ࡗ࡚࠸ࡓࠋᚑࡗ࡚࢟ࢳࣥศゎ㓝⣲࡟ࡼࡗ࡚⣽ࡃ࡞ࡗࡓ࢟ࢳࣥ
ࡀ⤖ᬗḞ㝗ࢆ⏕ࡌࡉࡏ࡚࠸ࡿࡇ࡜ࡀ♧၀ࡉࢀࡓࠋ
࢟ࢳࣥศゎ㓝⣲ࡢస⏝ࡢ᭷↓࡟ࡼࡿ࢟ࢳࣥ⧄⥔ࡢ㐪࠸ࢆࠊ㏻ᖖࡢ SEM ࡛ࡣ஝⇱ࡋ⧄⥔ࡀจ㞟ࡋ࡚ࡋࡲ࠺ࡓࡵࠊࢤࣝࢆ▐㛫෾⤖ࡋ࡚จ㞟ࡉࡏࡿࡇ࡜࡞ࡃほᐹ࡛ࡁࡿ Cryo-SEM ࢆ⏝࠸࡚ほᐹࡋࡓࠋ࢝ࣝࢧ࢖ࢺᙧ
ᡂᚋࡢ࢟ࢳࣥࢤࣝࢆほᐹࡋࡓ࡜ࡇࢁࠊศゎ㓝⣲ࢆస⏝ࡉࡏ࡚࠸࡞࠸࢟ࢳࣥࢤࣝ࡟ẚ࡭ࠊస⏝ࡉࡏࡓ࢟ࢳ
ࣥࢤ࡛ࣝࡣࡼࡾ⣽࠸࢟ࢳࣥ⧄⥔ࡀ࢝ࣝࢧ࢖ࢺ࡟ධࡾ㎸ࢇ࡛࠸ࡿࡇ࡜ࡀุ᫂ࡋࡓࠋ
[1] Okumura, T., et al. (2010) Micron 41, 821-826[2] Okumura, T., et al. (2012) Cryst. Growth Des. 12, 224-230

19

2
ࣁ࢖ࣃ࣮ࣁࢽ࣒࢝ș-Li2IrO3ࡢ NMR࣭☢໬ ᐃ࡟ࡼࡿ㧗ᅽ┦ᅗHigh-pressure phase diagram by NMR and magnetization study on
hyperhoneycomb ȕ-Li2IrO3
ᮾி኱Ꮫ⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ㧘ᮌ࣭໭ᕝ◊✲ᐊ $
࣐ࢵࢡࢫࣉࣛࣥࢡ◊✲ᡤ %ᯘ⩏அ $໭ᕝ೺ኴ㑻 $బࠎᮌ⚽ $㧗ᒣ▱ᘯ %㧗ᮌⱥ඾ $%㔞Ꮚࢫࣆࣥᾮయ࡜ࡣ㔞Ꮚ┦㛵࡟ࡼࡗ࡚⤯ᑐ㞽ᗘࡲ࡛ࢫࣆࣥࡀࡺࡽ࠸ࡔࡲࡲ⛛ᗎࡋ࡞࠸≧ែ࡛࠶ࡿࠋࡑ
ࡢ୍✀࡛࠶ࡿ࢟ࢱ࢚ࣇᆺ㔞Ꮚࢫࣆࣥᾮయࡣࠊࢫࣆࣥ1/2ࡀࣁࢽ࣒࢝᱁Ꮚୖ࡛࣎ࣥࢻ࡟౫Ꮡࡋ࡚ᙉ☢ᛶⓗ࡟┦஫స⏝ࡋ࡚࠸ࡿᶍᆺࡢᇶᗏ≧ែ࡛࠶ࡿ[1]ࠋ࢖ࣜࢪ࣒࢘㓟໬≀Į-Li2IrO3➼࡛ࡑࡢᐇ⌧ࡀᥦ᱌ࡉࢀ࡚௨᮶
[2]ࠊ┒ࢇ࡟◊✲ࡉࢀ࡚࠸ࡿࠋྠᵝࡢᶍᆺࡣࣁ࢖ࣃ࣮ࣁࢽ࣒࢝᱁Ꮚ(ᅗ1)ୖ࡛ࡶᐃ⩏࡛ࡁࠊࡑࡢᇶᗏ≧ែࡶ㔞Ꮚࢫࣆࣥᾮయ࡛࠶ࡿ[3]ࠋȕ-Li2IrO3࡛ࡑࡢᐇ⌧ࡀᮇᚅࡉࢀࡓࡀࠊᖖᅽୗ࡛ࡣ」㞧࡞☢Ẽ⛛ᗎࢆ♧ࡍ[4]ࠋ
ࡋ࠿ࡋᅽຊࢆ࠿ࡅࡿࡇ࡜࡛☢ሙㄏ㉳ࡢ☢Ẽ࣮࣓ࣔࣥࢺࡀᾘኻࡍࡿ[4]ࠋᅽຊㄏ㉳ࡢ㔞Ꮚࢫࣆࣥᾮయ≧ែࡀᐇ⌧ࡋ࡚࠸ࡿྍ⬟ᛶࡀ࠶ࡿࠋ୍᪉ࡉࡽ࡟㧗ᅽୗ࡛ࡣᵓ㐀㌿⛣ࡋ࡚Irࡀdimerࢆ࡞ࡍࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿ[5]ࠋ
ᡃࠎࡣȕ-Li2IrO3༢⤖ᬗࢆྜᡂࡋࠊ㧗ᅽୗ࡛☢໬⋡࡜NMRࢆ㧗࡛dimer࡬ࡢ㌿⛣࡜ࡳࡽࢀࡿῶᑡࡀほ࡟኱ࡁ࡞ኚ໬ࡀぢࡽࢀ࡞࠸ࠋࡲࡓ㌿⛣ᐃࡋࡓࠋ☢໬⋡࡜ࢼ࢖ࢺࢩࣇࢺ࡟࠾࠸࡚

ࡉࢀࡓ(ᅗ2)ࠋࡋ࠿ࡋ㌿⛣ࡢ๓ᚋ࡛☢Ẽࡺࡽࡂࢆ⾲ࡍ⦆࿴⋡ᗘࡀ☢ሙࡢ኱ࡁࡉ࡜᪉ྥ࡟኱ࡁࡃ౫Ꮡࡋ࡚࠸ࡿࠋࡇࢀࡽࡣ㏻ᖖࡢ➼᪉ⓗ࡞Heisenberg┦஫స⏝࡟ࡼࡿsinglet dimerᙧᡂ࡜ࡣ኱ࡁࡃ␗࡞ࡿ࡜⪃࠼ࡽࢀࡿࠋࢫࣆࣥ㌶㐨┦஫స⏝ࡸࣇࣥࢺ⤖ྜ࡟ࡼࡗ࡚⏕ࡎࡿࠊ࢟ࢱ࢚ࣇ┦஫స⏝ࡸsymmetric off-diagonal┦஫స⏝[6]࡟ࡼࡗ࡚␗
᪉ⓗ࡛☢Ẽࡺࡽࡂࡢ኱ࡁ࡞dimer┦ࡀᐇ⌧ࡋ࡚࠸ࡿ࡜⪃࠼ࡽࢀࡿࠋ

Para-magneticDimerᅗ㸯㸬ࣁ࢖ࣃ࣮ࣁࢽ࣒࢝᱁Ꮚࠋ

phaseᅗ 2. ȕ-Li2IrO3 ࡢ㧗ᅽ┦ᅗࠋ‫☢ࡣە‬໬⋡ࠊX ࡣ
NMRࠊ‫ ࡣۂ‬XRD[5]࡛ぢࡽࢀࡓ㌿⛣Ⅼࠋ
[1] A. Kitaev, Ann. Phys. (N.Y.) 321, 2 (2006)[2] G. Jackeli and G. Khaliullin, Phys. Rev. Lett.
102, 017205 (2009) [3] S. Mandal, and N.
Surendran, Phys. Rev. B, 79, 024426(2009)

Non--collinear[4] T. Takayama et al., Phys. Rev. Lett. 114,order

077202 (2015)[5] L. S. I. Veiga et al., Phys. Rev. B. 96, 140402(R) (2017)[6] J. G. Rau et al., Phys. Rev. Lett. 112, 077204 (2014)20

࣏ࢫࢱ࣮Ⓨ⾲P-01ᾮయ࣒࡛࣊ࣜ࢘෭༷ࡉࢀࡓ SQUID ☢᮰ィࡢ⮫ᗋᛂ⏝Clinical application of SQUID magnetometer cooled by liquid helium㝃ᒓ⑓㝔㻌 䛶䜣䛛䜣䝉䞁䝍䞊㻌‫‮‬ᮏ㻌 ┿ே㻌

1972 ᖺ࡟࣐ࢧࢳ࣮ࣗࢭࢵࢶᕤ⛉኱Ꮫ࡛ David Cohen ࡽ࡟ࡼࡗ࡚㸪☢Ẽࢩ࣮ࣝࢻ࣮࣒ࣝෆ࡛㉸ఏᑟ㔞Ꮚᖸ΅⣲Ꮚ (SQUID: superconducting quantum interference device) ☢᮰ィࢆ⏝࠸࡚ึࡵ࡚ࣄࢺࡢ⬻☢ሙࡀグ㘓ࡉࢀ࡚௨᮶㸪௒ᖺ࡛ 46 ᖺࡀ⤒㐣ࡋࡓ 1㸬ࡇࡢ㛫࡟㸪ࣄࢺࡢ⬻☢ሙࢆグ㘓ࡍࡿ⿦⨨㸦⬻☢ィ㸧ࡣ㸪ྠ᫬ィ࡛ࡁࡿࢳࣕࢿࣝᩘࢆ 7, 14, 37, 122 ࡜ቑຍࡉࡏ㸪⌧ᅾ㸪㢌㒊඲యࢆ 306 ࢳࣕࢿࣝࡢ SQUID ☢᮰ィ࡛࢝ࣂ࣮ࡍࡿ඲㢌ᆺ⬻☢ィࡀୡ⏺࡛᭱ࡶᬑཬࡋ࡚࠸ࡿ㸬ᙜ㝔࡛ࡣ㸪1990 ᖺ௦ึ㢌࡟ 37 ࢳࣕࢿࣝ⬻☢ィࡢ⮫ᗋ἞㦂ࢆ⾜࠸་⏝⬻☢ィࡢᅜෆ➨୍ྕᶵ࡜ࡋ࡚⸆஦ᢎㄆࡉࢀࡿ࡞࡝㸪⬻☢ሙィࡢ⮫ᗋᛂ⏝࡟ᙜึ࠿ࡽྲྀࡾ⤌ࡳ㸪⌧ᅾ㸪306 ࢳࣕࢿࣝ඲㢌ᆺ⬻☢ィ VectorView (Elekta Neuromag, Helsinki) ࡀ୰ኸデ⒪Ჷϩࡢ⬻☢ᅗᐊ࡟࢖ࣥࢫࢺ࣮ࣝࡉࢀ㸪✌ാࡋ࡚࠸ࡿ㸬ࣄࢺࡢ⬻⚄⤒⣽⬊⩌ࡢ㟁Ẽⓗάື࡟ࡼࡾ㢌㒊እ࡟⏕ࡌࡿ☢Ẽࡢ࣮࢜ࢲࡣ㸪☢᮰ᐦᗘ(T)࡟ࡋ࡚ 10í13 ࡜⎔ቃ☢ሙ㸦ᆅ☢Ẽ㹼10í4㸪㒔ᕷࣀ࢖ࢬ㹼10í6㸪ᚰ☢㹼10í9㸧࡟ẚ࡭࡚ᚤᙅ࡞ࡓࡵ㸪⬻☢ィࡣ mu-metal ࡞࡝ࡢᙉ☢ᛶయ࡛ 2~3 ᒙ࡟ᅖࢃࢀࡓᑓ⏝ࡢ☢Ẽࢩ࣮ࣝࢻ࣮࣒ࣝෆ࡟タ⨨ࡉࢀ㸦ᙜ㝔ࡣ」ᩘࡢᆅୗ㕲⥺㊰࡟ᅖࡲࢀࡓ㐣㓞࡞☢ሙ⎔ቃ࡟࠶ࡿࡓࡵ㸪᭦࡟ࢩ࣮ࣝࢻ࣮࣒ࣝእࡢ⎔ቃ☢ሙࢆ fluxgate ࢭࣥࢧ࡛ィࡋ㸪ࢩ࣮ࣝࢻ

࣮࣒ࣝࢆ 3 ㍈᪉ྥ࡟ྲྀࡾᕳࡃࢥ࢖ࣝ࡟㟁ὶࢆὶࡍࡇ࡜࡛ࢩ࣮ࣝࢻ࣮࣒ࣝෆ࡬ࡢΰධࢆ adaptive ࡟ cancelout ࡍࡿ active shield ࡀ௜ຍࡉࢀ࡚࠸ࡿ㸧㸪SQUID ࢆ㧗ឤᗘ☢Ẽࢭࣥࢧ࡜ࡋ࡚ᶵ⬟ࡉࡏࡿࡓࡵ㸪☢Ẽࢭࣥࢧࢆ཰ᐜࡍࡿࢹ࣮ࣗ࣡ෆ࡟ࡣᾮయ࡬࣒ࣜ࢘ࡀ඘ሸࡉࢀࡿ㸬᭱᪂ࡢ⬻☢ィ࡟ࡣ࣒࣊ࣜ࢘࢞ࢫࡢᅇ཰࣭ᾮ໬⿦
⨨ࡀ⿦ഛࡉࢀ࡚࠸ࡿࡀ㸪ᙜ㝔ࢆྵࡵᚑ᮶ᶵࡀタ⨨ࡉࢀࡓ᪋タ࡛ࡣ㸪Ẽ໬ࡋࡓ࣒࣊ࣜ࢘࢞ࢫࡣ኱Ẽ୰࡟ᨺฟࡉࢀࡿࡓࡵ㸪୍㐌㛫࡟ 80㹼100L ࡢᾮయ࣒࣊ࣜ࢘ࢆᾘ㈝ࡋ࡚࠸ࡿ㸬⬻☢ィࡣ㸪㢌⓶࡟㟁ᴟࢆ⿦╔ࡋ࡚⬻㟁఩ࢆィࡍࡿ⬻Ἴィ࡟ẚ࡭࡚㸪㐠⏝ࢥࢫࢺ㸪⿦⨨ࡢ౯᱁࡜ࡶ㧗౯࡛࠶ࡿࡀ㸪㢌⓶⬻㟁఩࡛ࡣᚓࡽࢀ࡞࠸⮫ᗋୖ᭷┈࡞᝟ሗࡀ⬻☢ሙ࡟ࡣྵࡲࢀ࡚࠸ࡿ㸬➨୍࡟㸪⬻Ἴィ࡛ࡣ᳨ฟ࡛ࡁ࡞࠸␗ᖖἼࡀ㸪⬻☢ィ࡛ᤕ࠼ࡿࡇ࡜ࡀ࡛ࡁࡿⅬࡀᣲࡆࡽࢀࡿ㸬⬻ෆࡢ㟁※ࢆ㟁ὶ཮ᴟᏊ࡜ぢ೴ࡍ࡜㸪≉ᐃࡢ㟁ὶ཮ᴟᏊࡀ㢌⓶ୖ࡟సࡿ㟁఩ศᕸ࡜☢ሙศᕸࡣ஫࠸࡟ 90 ᗘྥࡁࡀ␗࡞ࡿࡓࡵ㸪⬻Ἴ࡛ࡣ┦ᑐⓗ࡟ឤᗘࡀప࠸㢌⓶࡟ᆶ┤࡞⬻⁁ࡢ㟁Ẽάືࢆ㸪⬻☢ィ࡛ࡣࡼࡾ㧗ឤᗘ࡟ᤕ࠼ࡿࡇ࡜ࡀ࡛ࡁࡿ㸬⮫ᗋ᳨ᰝ࡟࠾࠸࡚⬻Ἴ࡜ྠ᫬࡟⬻☢ሙࢆグ㘓ࡍࢀࡤ㸪␗ᖖἼࡢぢ㏨ࡋࢆ㜵ࡄࡇ࡜ࡀ࡛ࡁࡿ㸬➨஧࡟㸪㟁ὶ཮
ᴟᏊࡢ 3 ḟඖ఩⨨᥎ᐃࡀ㸪⬻㟁఩ࡼࡾࡶ⬻☢ሙࢆ౑ࡗࡓ᪉ࡀṇ☜࡟⾜࠼ࡿⅬࡀᣲࡆࡽࢀࡿ㸬ࣄࢺࡢ㢌㒊⤌⧊ࡢᑟ㟁⋡ࡣ㸪㦵࡜⬻⬨㧊ᾮ࡛⣙ 200 ಸ␗࡞ࡿ࡞࡝୙ᆒ୍࡟ศᕸࡍࡿ୍᪉㸪㏱☢⋡ࡣ࡯ࡰ㢌㒊እࡢ✵Ẽࢆྵࡵ࡚ᆒ୍ศᕸࡢࡓࡵ㸪㢌㒊⤌⧊ศᕸ࡟౫Ꮡࡋ࡞࠸ṍࡢᑡ࡞࠸⬻☢ሙࢹ࣮ࢱࢆ⏝࠸ࡓ᪉ࡀ⬻ෆ㟁※ࡢ఩⨨ࢆṇ☜࡟ྠᐃ࡛ࡁࡿ㸬ࡇࡢࡼ࠺࡞≉ᛶ࠿ࡽ㸪⬻☢ィࡣᢠ࡚ࢇ࠿ࢇ⸆࡛Ⓨసࡀࢥࣥࢺ࣮࡛ࣟࣝࡁ࡞
࠸࡚ࢇ࠿ࢇᝈ⪅ࡢእ⛉἞⒪࡟࠾࠸࡚㸪἞⒪᪉㔪ࡢỴᐃ࡟ᙺ❧ࡘ᭷┈࡞᝟ሗࢆᥦ౪ࡋ࡚࠸ࡿ㸬[1] D.Cohen, Science 175 664–66 (1972)

22

3-
ࣂ࢖࣑࢜ࢿࣛࣝෆࡢ㓟ᛶࢱࣥࣃࢡ㉁࡟࠾ࡅࡿ
ሷᇶᛶṧᇶࡢᙺ๭ࡢゎᯒ
Function analyses of basic residues in the acidic proteins of biominerals㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉ᛂ⏝⏕࿨໬Ꮫᑓᨷศᯒ໬Ꮫ◊✲ᐊⲨᇛ⥤㤶ࠊ㝆᪝୍ኵࠊᮅ಴ᐩᏊࠊ἟Ꮚ༓ᘺࠊಖ಴᫂ᏊࠊỌ⏣ᏹḟࠊ㕥ᮌ㐨⏕ ⏕≀ࡀసࡾฟࡋࡓ↓ᶵ≀࠿ࡽᡂࡿ◳⤌⧊ࢆࣂ࢖࣑࢜ࢿࣛࣝ࡜࿧ࡪࠋࣂ࢖࣑࢜ࢿࣛࣝෆࡢࢱࣥࣃࢡ㉁࡟
ࡣከࡃࡢ㓟ᛶ࢔࣑ࣀ㓟ࡀྵࡲࢀࠊ࢝ࣝࢩ࣒࢘࡞࡝ࡢ㔠ᒓ࡜ࡢ┦஫స⏝࡟㔜せ࡞ᙺ๭ࢆᣢࡘ1 ࡇ࡜ࡀ᫂ࡽ
࠿࡜࡞ࡗ࡚࠸ࡿࠋ୍᪉࡛ࠊከࡃࡢሷᇶᛶṧᇶࡀ㓟ᛶṧᇶࡢ㏆ഐ࡟Ꮡᅾࡍࡿࡇ࡜ࡀ♧ࡉࢀ࡚ࡁࡓࡀࠊሷᇶ
ᛶṧᇶࡢᙺ๭࡟ࡘ࠸࡚ࡣᮍࡔ୙᫂࡞ࡇ࡜ࡀከ࠸ࠋࡑࡇ࡛ࠊᮏ◊✲࡛ࡣ▼⅊໬࡟࠾ࡅࡿሷᇶᛶṧᇶࡢᙺ๭ࡢゎ᫂ࢆ┠ⓗ࡜ࡋࡓࠋ࢔ࢥࣖ࢞࢖(Pinctada fucata)ࡢ┿⌔ᒙ⏤᮶ࡢ Pif 802 ࡟⧞ࡾ㏉ࡋ⌧ࢀࡿࠊDDRKDDRKGG࡜࠸࠺㓄ิ࡟╔┠ࡋࠊྜᡂ࣌ࣉࢳࢻࢆ⏝࠸࡚ᐇ㦂ࢆ⾜࠺ࡇ࡜࡛ሷᇶᛶࡢṧᇶࡢᙺ๭ࡢゎ᫂ࢆヨࡳࡓࠋPif 80ࡢ⧞ࡾ㏉
ࡋ㓄ิDDRKDDRKGGࢆP1࡜ࡋࠊẚ㍑ᑐ㇟࡜ࡋ࡚DDAADDAAGG(P2)ࠊAARKAARKGG(P3)ࢆ‽ഛࡋࡓࠋࡇࢀࡽࡢ࣌ࣉࢳࢻࢆ⏝࠸࡚➼⁲ᐃᆺ⇕㔞

ᐃ(ITC)ࢆ⾜ࡗࡓ࡜ࡇࢁࠊ㓟ᛶṧᇶ࡜ሷᇶᛶṧᇶࡢ୧᪉ࢆ᭷ࡍࡿࡇ࡜࡛ࠊ㓟ᛶṧᇶࡢࡳࡢሙྜ࡜Ⅳ㓟࢝ࣝࢩ࣒࢘⤖ᬗ࡜ࡢ┦஫స⏝ࡢᵝᘧࡀ␗࡞ࡿࡇ࡜ࡀุ᫂ࡋ
ࡓࠋ ࣌ࣉࢳࢻ࡜Ⅳ㓟࢝ࣝࢩ࣒࢘ࡢ┦஫స⏝ࢆࡼࡾヲ⣽࡟ㄪ࡭ࡿ㝿ࠊࢧࣥࣉࣝࡣᾮయ୰࡛ศᩓࡋ࡚࠸ࡿ᪉ࡀ
ዲࡲࡋ࠸ࡀࠊⅣ㓟࢝ࣝࢩ࣒࢘ࡣ⁐ゎᗘ✚ࡀ㠀ᖖ࡟ᑠࡉࡃࠊࡍࡄ࡟ᅛయ࡟จ㞟ࡋ࡚ࡋࡲ࠺ᛶ㉁ࡀ࠶ࡿⅬࡀၥ㢟࡜࡞ࡿࠋࡑࡇ࡛ࠊⅣ㓟࢝ࣝࢩ࣒࢘ࡢ⤖ᬗᙧᡂࡢึᮇẁ㝵࡟ᙧᡂࡍࡿACCࢼࣀ⢏Ꮚ3 ࢆ⁐ᾮ୰࡛ಖᣢ
ࡍࡿࡇ࡜࡛ࠊゎỴࢆヨࡳࡓࠋACCỈ⁐ᾮࢆㄪ〇ࡋࠊ㹖⥺྾཰ᚤ⣽ᵓ㐀ゎᯒ(XAFS)ࡢ

ᐃࢆ⾜࠺ࡇ࡜

࡛ࠊACCࢼࣀ⢏Ꮚࡀ⁐ᾮ୰࡟Ꮡᅾࡍࡿࡇ࡜ࢆ☜ㄆࡋࡓࠋ ࣌ࣉࢳࢻࡢྛṧᇶ࡟╔┠ࡋ࡚ACCỈ⁐ᾮ࡜ࡢ┦஫స⏝ࢆㄪ࡭ࡿࡓࡵ࡟ࠊ᰾☢Ẽඹ㬆(NMR)ࢆ⏝࠸࡚ᐇ㦂ࢆ⾜ࡗࡓࠋACCỈ⁐ᾮ࡟ྛ࣌ࣉࢳࢻࢆ⁐ゎࡋࡓࢧࣥࣉࣝ࡜࢝ࣝࢩ࣒࢘Ỉ⁐ᾮ࣭Ⅳ㓟࢖࢜ࣥỈ⁐ᾮ࡟⁐ゎࡋࡓࢧࣥࣉࣝ࡜࡛1H-NMRࡢ໬Ꮫࢩࣇࢺࢆẚ㍑ࡋࡓࠋࡉࡽ࡟ヲ⣽࡟┦஫స⏝ࢆㄪ࡭ࡿࡓࡵࠊ㣬࿴⛣
ືᕪ(STD: saturation transfer difference)ࢆ

ᐃࡍࡿࡇ࡜࡛ࠊྛṧᇶ࡜Ⅳ㓟࢝ࣝࢩ࣒࢘࡜ࡢ㊥㞳ࢆẚ㍑ࡋ

ࡓࠋࡑࡢ⤖ᯝࠊP1ࡢ࢔ࢫࣃࣛࢠࣥ㓟ṧᇶࡼࡾࡶሷᇶᛶṧᇶࡢ᪉ࡀ㣬࿴⛣ືࡀ኱ࡁ࠸ࠊࡘࡲࡾⅣ㓟࢝ࣝࢩ࣒࢘ࡢ㏆ࡃ࡟࠶ࡿ࡜࠸࠺ࡇ࡜ࡀศ࠿ࡗࡓࠋ
ᮏ◊✲࡟ࡼࡾࠊ⏕య㖔≀ࡢᙧᡂ㐣⛬࡟࠾࠸࡚ࠊ᭷ᶵ≀ࡀ㓟ᛶṧᇶ࡜ሷᇶᛶṧᇶࡢ୧᪉ࢆ᭷ࡍࡿࡇ࡜࡟
ࡼࡾࠊ࢝ࣝࢩ࣒࢘࢖࢜ࣥࡔࡅ࡛࡞ࡃⅣ㓟࢝ࣝࢩ࣒࢘࡜ࡢ┦஫స⏝ࡀྍ⬟࡟࡞ࡿࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋ
[1] Weiner and Addadi, Trends in Biochemical Sciences 16, 252 (1991).
[2] Suzuki, Saruwatari, Kogure, Yamamoto, Nishimura, Kato, and Nagasawa, Science (New York, N.Y.) 325, 1388
(2009).
[3] Loste, Wilson, Seshadri, and Meldrum, Journal of Crystal Growth 254, 206 (2003).

23

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ච␿ᰁⰍ࡟⏝࠸ࡿ☢ᛶࣅ࣮ࢬ࡜ච␿ᰁⰍ⿦⨨ࡢ㛤Ⓨ
Evaluation of magnetic beads using magnetic immunostaining኱Ꮫ㝔ᕤᏛ⣔◊✲⛉ 㟁Ẽ⣔ᕤᏛᑓᨷ 㛵㔝◊✲ᐊ ៞᠕⩏ሿ኱Ꮫ㸰ࠊL0HG-DSDQ㸱ࠊᮾிᕤᴗ኱Ꮫ㸲ࠊ࣐ࢺࣜࢵࢡࢫ⣽⬊◊✲ᡤ㸳㞄┿୍ ࠊ㔠Ꮚ⨾ᶞ ࠊᯇ⏣♸Ꮚ㸰ࠊ᱓Ἴ⏣᫭ᘯ ࠊ୪⏣ᑗᖾ ࠊᩧ⸨㐓㑻㸱ࠊᆏᮏ⪽㸲ࠊ᪥ୗ㒊Ᏺ᫛㸳ࠊ㛵㔝ṇᶞ ㎿㏿デ᩿ἲࡣ≉࡟ࡀࢇᡭ⾡୰࡟⾜ࢃࢀࡿࡀࢇデ᩿࡛࠶ࡾࠊᇳ
ย་ࡀ⾡୰ࡢᝈ㒊࠿ࡽ⤌⧊ࢆ᦬ฟࡋ⑓⌮་ࡀ⤌⧊ࢆデ᩿ࡋ࡚ࡀࢇࡢ⛬ᗘࢆุᐃࡋ⾡ᘧ࡟཯ᫎࡉࡏࡿ┠ⓗࡀ࠶ࡿࠋ㎿㏿࡞デ᩿ࡀồࡵࡽࢀࡿࡢ࡛ࠊ㏻ᖖࡣ⤌⧊ࡢ㢧ᚤ㙾ほᐹ࡟ࡼࡾ␗ᙧࡢ⣽⬊ࢆࡀࢇ⣽⬊࡜ࡋ࡚≉ᐃࡍࡿ᪉ἲࡀྲྀࡽࢀࡿࠋච␿ᰁⰍἲࡣࡼࡾ㧗ᗘ࡞ࡀࢇデ᩿࡟⏝࠸ࡽࢀࡿ᪉ἲ࡛࠶ࡿࠋᢠయ㸦Antibody㸧ࡀᢠཎ㸦Antigen㸧ࢆ᭷ࡍࡿࡀࢇ⣽⬊࡜⤖ྜࡍࡿච␿཯ᛂࢆ⏝࠸ࡿࠋࡀࢇ⣽⬊ࡣᰁⰍ࡟ࡼࡗ࡚≉ᐃࡉࢀࡿࡢ࡛ࠊࡀࢇ⣽⬊ࡢ఩⨨ࡸ✀㢮ࡸᙧ≧ࢆṇ☜࡟▱ࡿࡇ࡜ࡀ࡛ࡁࡿࡀࠊ᳨యసᡂ࡟᫬㛫ࡀ࠿࠿ࡿࡇ࡜ࠊ᪤Ꮡࡢච␿཯ᛂ⮬ື໬⿦⨨ࡣ⤌⧊ࡢ◚○➼ࡢฎ⌮ࢆせࡍࡓࡵ㎿㏿デ᩿࡟ࡣ⏝࠸ࡽࢀ࡚࠸࡞࠸ࠋ
ᡃࠎࡣࠊ☢ຊ࡟ࡼࡗ࡚ᢠయࢆㄏᑟࡍࡿຠᯝ࡛ච␿཯ᛂ᫬㛫ࢆ኱ᖜ࡟▷⦰࡛ࡁࡿ☢Ẽච␿ᰁⰍἲ[1]࡟╔┠ࡋࠊ⾡୰㎿㏿デ᩿࡟ሓ࠼ࡿ⮬ື☢Ẽච␿ฎ⌮⿦⨨ࡢ㛤Ⓨࢆ⾜ࡗ࡚࠸ࡿࠋ
ᮏ◊✲࡛ࡣࠊప ࢭࣥࢱ࣮ࡢ MPMS ࢆ౑⏝ࡋ࡚ඹྠ㛤Ⓨ୰ࡢᢠయᅛᐃ⺯ග☢Ẽࣅ࣮ࢬ㸦FF beads㸧[2]ࡢ☢Ẽ≉ᛶࢆㄪ࡭ࠊ

ᅗ㸯㸬ᢠయᅛᐃ⺯ග☢Ẽࣅ࣮ࢬ⢏Ꮚᡂศࡀ㉸☢ᛶࢆ♧ࡍ㉸ᚤ⣽ࣇ࢙ࣛ࢖ࢺ⢏Ꮚ࡜ᙉ☢ᛶࢆ♧ࡍࢆ⏝࠸ࡓ☢Ẽච␿ᰁⰍἲ

ⱝᖸࡢࣇ࢙ࣛ࢖ࢺ⢏Ꮚࡢ」ྜయ࠿ࡽ࡞ࡿࡇ࡜ࢆゎ᫂ࡋࡓࠋࡉࡽ
࡟ࠊ☢Ẽ⢏Ꮚࡢㄏᑟ࡟⏝࠸ࡿ☢ሙタィࡢࡓࡵࠊ☢ሙⓎ⏕※࡜ࡋ࡚ᙧ≧ࡀ␗࡞ࡿỌஂ☢▼ࡢ☢ሙィ⟬࡜ච␿ᰁⰍᐇ㦂࡟ࡼࡿẚ㍑᳨ウࢆ⾜ࡗࡓࠋࡑࡢ⤖ᯝࠊ☢ᴟ᩿㠃ࡀ᷸ṑᙧ≧ࡢ☢▼(Comb-teeth)ࡣ཯ᛂ᫬㛫ࡢ▷⦰࡟ඃࢀࠊ☢ᴟ㠃࡟ NS ☢
ᴟࡀ஺஫࡟㓄⨨ࡉࢀࡓ☢▼㸦N-S㸧ࡣ཯ᛂ⟠ᡤࡢ⦓ᐦࡉ࡟ඃ
ࢀࡿ࡜࠸࠺▱ぢࢆᚓࡓࠋᮏ◊✲ࡣ AMED ࡢᨭ᥼࡟ࡼࡗ࡚⾜ࢃࢀࡓࠋᅗ㸰㸬ච␿ᰁⰍࡉࢀࡓ⣽⬊ࡢศᕸ㸦㉥Ⰽ
㍤Ⅼ⟠ᡤ㸧ࡢ☢▼ᙧ≧౫Ꮡᛶ

[1] R. Liu, et al., Talanta 81 (2010).
[2] S. Sakamoto et al., Clin. Chem. 60 (2014).

24

3-
pH dependency of iron coordination by TtFbpA, the periplasmic
iron-binding subunit of the ABC-type iron transporter from Thermus
thermophilus HB8, analyzed by solution NMR㻰㼑㼜㼍㼞㼠㼙㼑㼚㼠㻌㼛㼒㻌㻭㼜㼜㼘㼕㼑㼐㻌㻮㼕㼛㼘㼛㼓㼕㼏㼍㼘㻌㻯㼔㼑㼙㼕㼟㼠㼞㼥㻘㻌㻳㼞㼍㼐㼡㼍㼠㼑㻌㻿㼏㼔㼛㼛㼘㻌㼛㼒㻌㻭㼓㼞㼕㼏㼡㼘㼠㼡㼞㼍㼘㻌㼍㼚㼐㻌㻸㼕㼒㼑㻌㻿㼏㼕㼑㼚㼏㼑㼟㻘㻌㼀㼔㼑㻌㼁㼚㼕㼢㼑㼞㼟㼕㼠㼥㻌㼛㼒㻌㼀㼛㼗㼥㼛㻌㻼㼑㼚㼓㻌㻸㼡㻘㻌㼅㼛㼟㼔㼕㼗㼕㻌㻷㼛㼎㼍㼥㼍㼟㼔㼕㻘㻌㻹㼕㼙㼕㼚㻌㼆㼔㼍㼚㼓㻘㻌㼅㼕㻌㻸㼡㻘㻌㼅㼡㼗㼕㼑㻌㻷㼍㼠㼍㼥㼍㼙㼍㻘㻌㻹㼕㼏㼔㼕㼛㻌㻿㼡㼦㼡㼗㼕㻘㻌㻱㼠㼟㼡㼞㼛㻌㼅㼛㼟㼔㼕㼙㼡㼞㼍㻘㻌㻷㼛㼖㼕㻌㻺㼍㼓㼍㼠㼍㻌
Introduction
Iron is one of the vital elements in living organisms and the way of absorbing iron from the environment varies alot. In Gram-negative bacteria, the ATP-binding cassette (ABC) transport system is involved in the iron uptake andnamed ABC transporters. A typical iron-uptake ABC transporter basically consists of three subunits, namely the ironbinding subunit (FbpA) in the periplasm, the transmembrane subunit (FbpB) in the inner membrane bilayer and thenucleotide-binding subunit (FbpC) in the cytoplasm. Subunit B and C are highly conserved among the ABCtransporters, however, FbpA can be exclusively found in Gram-negative bacteria. In our previous study, we havedetermined the crystal structure of the FbpA subunit from Thermus themophilus HB8 (TtFbpA). This crystal structureof TtFbpA at pH 5.2 shows a six-coordinated form of iron binding with three tyrosine residues, one water molecule,and two bicarbonates. Another crystal structure of TtFbpA at pH 7.5 was reported, which shows a five-coordinatedform of iron binding with three tyrosine residues and one carbonate. These two different structures suggest that theiron-coordination manner could be influenced by pH conditions. The objectives of this study are to analyze the ironcoordination manner of TtFbpA at different pH conditions in solution to further understand the mechanism of ironuptake in Gram-negative bacteria, which will give rise to a new conception of anti-bacteria drug design.
Methods and Result
TtFbpA was overexpressed in E. coli and purified as reported. The last purification step was performed by the size
exclusion chromatography under several pH conditions ranging from pH 5.0 to 9.0 in the presence or absence of
Fe3+ ion. 2D NOESY spectra of TtFbpA with or without Fe3+ at pH 5.0, 6.0, 7.0, 8.0 and 9.0 were measured. The
cross-peaks of tyrosine side chains were hardly observed in the absence of Fe3+. However, some of these signals
became observable by the addition of Fe3+, suggesting that these tyrosine signals could be involved in Fe3+
coordination. The chemical shifts of these tyrosine signals were pH-dependent. the chemical shifts at pH 5.0 and 6.0
were prominently different from those at pH 7.0, 8.0 and 9.0. These results explain the different coordination modesof Fe3+ in the two crystal structures of TtFbpA at pH 5.2 and 7.5. These pH-dependent Fe3+ coordination modes ofTtFbpA are probably based on the pH-dependent equilibrium of bicarbonate and carbonate ions.

25

3-
ࢩ࢔ࣀᯫᶫ㓄఩㧗ศᏊ࡟࠾ࡅࡿࣉࣟࢺࣥఏᑟᛶ
Proton conductivity of cyanido-bridged coordination polymers⌮Ꮫ⣔◊✲⛉໬Ꮫᑓᨷ኱㉺◊✲ᐊ୰ᕝᖾ♸ࠊ኱㉺ៅ୍ᙜ◊✲ᐊࡣࡇࢀࡲ࡛࡟ࠊࢩ࢔ࣀᯫᶫᆺ㔠ᒓ㘒యࢆ⏝࠸࡚ࠊ‵ᗘᛂ⟅☢ᛶయ࡞࡝᪂つᶵ⬟ᛶࢆ᭷ࡍࡿࢩ
࢔ࣀᯫᶫᆺ㔠ᒓ㘒యࢆሗ࿌ࡋ࡚ࡁࡓ[1]ࠋ2010ᖺ࡟ࡣࠊ࣊࢟ࢧࢩ࢔ࣀ㘒య࡛࠶ࡿ Co[Cr(CN)6]2/3·4.8H2O࡟
࠾࠸࡚㉸࢖࢜ࣥఏᑟᛶ࡜ᙉ☢ᛶࡀඹᏑࡍࡿࡇ࡜ࠊࡲࡓ V[Cr(CN)6]2/3·4.2H2O࡟࠾࠸࡚㉸࢖࢜ࣥఏᑟᛶ࡜ᙉ
☢ᛶࡀ࢝ࢵࣉࣜࣥࢢࡍࡿࡇ࡜ࢆぢฟࡋ࡚࠸ࡿ[2]ࠋ୍᪉ࠊࢩ࢔ࣀᇶࡀ 8ࡘ㓄఩ࡋࡓ࢜ࢡࢱࢩ࢔ࣀ㔠ᒓ㘒య࡛ࡣࠊ☢Ẽ⛛ᗎ࡜㉸࢖࢜ࣥఏᑟᛶࡀඹᏑࡍࡿMnII3[NbIV(CN)8]2(4-aminopyridine)10(4-aminopyridinium)2·
12H2O [MnNb(4-NH2py)]ࢆぢฟࡋ࡚࠸ࡿ[3]ࠋᮏ◊✲࡛ࡣࠊMn-Nb࢜ࢡࢱࢩ࢔ࣀ㔠ᒓ㘒య࡛࠶ࡿ MnII2㸫
[NbIV(CN)8](3-aminopyridine)8·2H2O [MnNb(3-NH2py)]࡟ࡘ࠸࡚ࠊ☢Ẽ≉ᛶ࡜࢖࢜ࣥఏᑟᛶࢆ᳨ウࡋࡓࠋ
MnNb(3-NH2py)ࡣࠊ㯤Ⰽ⢊ᮎ࡜ࡋ࡚ᚓࡽࢀࠊ⢊ᮎ X ⥺ᅇᢡࣃ

(a)㻌
10000

3

ᯫᶫࡉࢀࡓ 3 ḟඖṇ᪉ᬗᵓ㐀ࢆᣢࡘࡇ࡜ࡀ♧၀ࡉࢀࡓࠋMn ࢖࢜

M / G cm mol-1ࢱ࣮ࣥ࡜࣮ࣜࢺ࣋ࣝࢺゎᯒࡢ⤖ᯝ࠿ࡽࠊ㔠ᒓ࢖࢜ࣥࡀࢩ࢔ࣀᇶ࡛
ࣥࡣ᭷ᶵ㓄఩Ꮚࡢ N ཎᏊࡀ 4 ࡘ࡜ࢩ࢔ࣀᇶࡢ N ཎᏊࡀ 2 ࡘ㓄఩ࡋ࡚࠸ࡿᨃඵ㠃యᵓ㐀ࢆ࡜ࡾࠊNb ࢖࢜ࣥࡣࢩ࢔ࣀᇶࡢ C ඖ⣲ࡀ
8 ࡘ㓄఩ࡋࡓࢻࢹ࢝࣊ࢻࣟࣥᵓ㐀ࢆ࡜ࡗ࡚࠸ࡓࠋỈศᏊࡣ㔠ᒓ࢖

5000

0

࢜ࣥ࡜ࢩ࢔ࣀᇶࡀᙧᡂࡍࡿ 3 ḟඖࢿࢵࢺ࣮࣡ࢡࡢ✵㝽࡟Ꮡᅾࡋ࡚࠸ࡓࡀࠊỈศᏊ㛫࡟࠾࠸࡚Ỉ⣲⤖ྜࢿࢵࢺ࣮࣡ࢡࡣᙧᡂࡉࢀ࡚

0

10

(b)

20

30

40

50

60

T/K

࠸࡞࠿ࡗࡓࠋ⥆࠸࡚ప ࢭࣥࢱ࣮ࡼࡾ౪⤥ࡉࢀࡿᾮయ࣒࣊ࣜ࢘ࢆ
⏝࠸࡚ MnNb(3-NH2py)ࡢ☢Ẽ≉ᛶࡢ ᐃࢆ⾜ࡗࡓ࡜ࡇࢁࠊ43 K
࡟࠾࠸࡚☢Ẽ┦㌿⛣ࢆ♧ࡋࠊMnNb(3-NH2py)ࡀᙉ☢ᛶయ࡛࠶ࡿ
ࡇ࡜ࡀ♧၀ࡉࢀࡓ㸦ᅗ 1a㸧ࠋࡉࡽ࡟ࠊᐊ ࡟࠾࠸࡚ MnNb(3-NH2py)ࡢ」⣲࢖ࣥࣆ࣮ࢲࣥࢫ ᐃ࠾ࡼࡧ Cole-Cole ࣉࣟࢵࢺゎᯒࢆ⾜ࡗࡓ⤖ᯝࠊ‵ᗘ 100㸣࡛ࡢఏᑟ⋡ࡣ 4×10−6 S cm−1 ࡜ぢ✚ࡶࡽࢀࡓ㸦ᅗ

ᅗ 1. (a) MnNb(3-NH2py)ࡢ☢ሙ୰෭༷☢
෭༷1b㸧ࠋ㉸࢖࢜ࣥఏᑟᛶࢆ♧ࡍ MnNb(4-NH2py)ࡣᵓ㐀୰࡟㓄఩Ỉࠊ ໬᭤⥺ࠊ(b) ᐊ ࠊ‵ᗘ 100%࡟࠾ࡅࡿ
MnNb(3-NH2py)ࡢ」⣲࢖ࣥࣆ࣮ࢲࣥࢫ
⤖ᬗỈ࠾ࡼࡧࣉࣟࢺࣥ໬ࡋࡓ᭷ᶵ㓄఩Ꮚ࠿ࡽ࡞ࡿ 3 ḟඖỈ⣲⤖ྜࢿࢵࢺ࣮࣡ࢡࢆᣢࡘ୍᪉ࠊMnNb(3-NH2py)࡛ࡣỈ⣲⤖ྜࢿࢵᐃ⤖ᯝࢺ࣮࣡ࢡࡀᙧᡂࡉࢀ࡚࠸࡞࠸ࡇ࡜࠿ࡽࠊ㧗࠸ࣉࣟࢺࣥఏᑟᛶࢆᐇ⌧ࡉࡏࡿࡓࡵ࡟ࡣࠊࣂࢣࢶ࣮ࣜࣞࡢࡼ
࠺࡟ࣉࣟࢺࣥࡀఏᑟ࡛ࡁࡿỈ⣲⤖ྜࢿࢵࢺ࣮࣡ࢡࡀᚲせ࡛࠶ࡿࡇ࡜ࡀ♧၀ࡉࢀࡓࠋ
[1] S. Ohkoshi, K. Arai, Y. Sato, K. Hashimoto, Nature Materials 3, 857 (2004). [2] S. Ohkoshi, K. Nakagawa, K.
Tomono, K. Imoto, Y. Tsunobuchi, H. Tokoro, J. Am. Chem. Soc. 132, 6621 (2010). [3] K. Imoto, K. Nakagawa, H.
Miyahara, S. Ohkoshi, Cryst. Growth Des. 13, 4673 (2013).

26

3
Recent Development in Ultrafast and Continuous Flow Synthesis of
Crystalline Microporous Materials
Zhendong Liu, Toru Wakihara,* and Tatsuya Okubo*
Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo,
Bunkyo-Ku, Tokyo 113-8656, Japan(*Email: wakihara@chemsys.t.u-tokyo.ac.jp and okubo@chemsys.t.u-tokyo.ac.jp)
Crystalline microporous materials such as aluminosilicate zeolites and aluminophosphatebased microporous crystals have long been used in the fields of catalysis and separation, andgreatly contributed to modern society.[1] Hydrothermal synthesis of crystalline microporous
materials, however, typically takes a long period ranging from several hours to even several
weeks depending on the targeted framework and the chemical composition. Considerable
efforts have been devoted to shorten the synthesis period. Fast synthesis of crystalline
microporous materials is still a daunting challenge yet highly demanded.

Figure 1 Ultrafast synthesis of crystalline microporous materials on the order of minutes. a, The tubular reactor. b, The oilbath. c, SEM images of the representative crystalline microporous materials synthesized in the tubular reactor (time andtemperature below the images represent synthesis time and temperature, respectively). d, N2 adsorption-desorption
isotherms for the the fast-synthesized SSZ-13 and SSZ-13 synthesized using autoclave for several days.[3]We recently developed a methodology aimed at ultrafast and continuous flow synthesis of
crystalline microporous materials.[2,3] A tubular reactor (Figure 1a) made of stainless steel tube
with diameters of several millimeters was introduced to the synthesis of crystalline
microporous materials. Because of smaller size and higher surface-to-volume ratio, the tubular
reactor is able to achieve a fast heating if a preheated oil bath is employed (Figure 1b). Thisfeature of the tubular reactor, together with rational design of synthesis precursors as well as
the use of seeds, enabled us to synthesize a class of crystalline microporous materials on theorder of several minutes (Figure 1c). Thanks to the ultrashort synthesis period, the continuous
flow synthesis was also easily established. The products of the new synthesis route possessedsimilar porous and textual properties as characterized by XRD, SEM and N2 adsorptiondesorption (Figure 1d). We also proved that this continuous flow synthesis method can beapplied to a wide range of industrially important zeolites.
References[1] Davis, M. E. Nature 2002, 417, 813.
[2] Liu, Z.; Wakihara, T.; Nishioka, D.; Oshima, K.; Takewaki, T.; Okubo, T. Chem. Commun. 2014, 50, 2526.
[3] Liu, Z.; Wakihara, T.; Oshima, K.; Nishioka, D.; Hotta, Y.; Elangovan, S. P.; Yanaba, Y.; Yoshikawa, T.;
Chaikittisilp, W.; Matsuo, T.; Takewaki, T.; Okubo, T. Angew. Chem. 2015, 127, 5775.

27

3-
Diameter dependent superconductivity in individual WS2 nanotubes
1

2

The University of Tokyo
Lawrence Berkeley National Laboratory
3
Holon Institute of Technology
4

5

Weizmann Institute of Science
RIKEN Center for Emergent Matter Science (CEMS)

Feng Qin1, Toshiya Ideue1, Wu Shi1,2, Xiao-xiao Zhang1, Masaro Yoshida1,5, Alla Zak3,
Reshef Tenne4, Tomoka Kikitsu5, Daishi Inoue5, Daisuke Hashizume5, Yoshihiro Iwasa1,5Superconductivity in low dimensional systems based on Transition Metal Dichalcogenides (TMD) materials
has been attracting significant attention in recent years. Among them, the TMD nanotube is a fascinating platform
for the research of superconductivity due to its unique dimensionality and geometry [1]. Especially, the novel chiralsuperconducting transport originating from the nanotube chirality has been discovered recently in an individualWS2 nanotube via electrochemical doping with ionic gate [2].
Here we report the diameter dependence of superconductivity in individual WS2 nanotubes. The
superconductivity is realized by electrochemical doping with ionic gate, in which the diameter of nanotube is
estimated from the periodic oscillating magnetoresistance, known as Little Parks effect [3], while the criticaltemperature of superconductivity is estimated as the half resistance from the temperature dependent resistanceduring the superconducting transition. As a result, the critical temperature displays a systematic relation as afunction of the diameter. The present results might offer the crucial information to understand the microscopic
mechanism of superconductivity in individual nanotube.

Figure 1. (a) Schematic figure of WS2 nanotube with ionic liquid gate. (b) The temperature dependent resistanceand superconducting transition with TC of 5.8 K. (c) The critical temperature as a function of the diameter.
[1] R. Tenne et al., Nature 360, 444-460 (1992).
[2] F. Qin et al., Nature Commun. 8, 14465 (2017).
[3] W. A. Little et al., Phys. Rev. Lett. 9, 9 (1962).

28

3-
ᵓ㐀᝟ሗ࡟ᇶ࡙ࡃ 4-HIL ྜᡂ㓝⣲ࡢ❧య㑅ᢥᛶࡢไᚚ
Structure-guided optimization of stereoselectivity of 4-HIL synthase1ᮾி኱Ꮫ኱Ꮫ㝔㎰Ꮫ⏕࿨⛉Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨໬Ꮫᑓᨷ
1

1

1

1

‫ࠊ ⋞▼ۑ‬ᐑᕝᣅஓ ࠊ୰ᮧ㢧 ࠊ౳ᓠ ࠊ⏣அ಴ඃ21ி㒔኱Ꮫ኱Ꮫ㝔㎰Ꮫ◊✲⛉࣭ᛂ⏝⏕࿨⛉Ꮫᑓᨷ᪥ẚៅ 2ࠊᑠᕝ㡰 2

4-hydroxyisoleucin (4-HIL) ࡣኳ↛࢔࣑ࣀ㓟ࡢ୍✀࡛࠶ࡾࠊศᏊෆ࡟ 3 ࡘࡢ୙ᩧ୰ᚰࢆࡶࡘࡇ࡜࠿ࡽ 8✀㢮ࡢ❧య␗ᛶయࢆ࡜ࡿࠋ㤶㎞ᩱ࡜ࡋ࡚฼⏝ࡉࢀ࡚࠸ࡿࣇ࢙ࢾࢢ࣮ࣜࢡࡢ✀Ꮚ࠿ࡽ 4-HIL ࡢ 2 ✀㢮ࡢ␗ᛶయࡀ༢㞳ࡉࢀࠊࡑࡢ୍᪉ࡢ 2S,3R,4S యࡣࣄࢺࡸࣛࢵࢺ࡟࠾࠸࡚⮅⮚ࢆ่⃭ࡋ࡚࢖ࣥࢫࣜࣥศἪάᛶ
ࢆ♧ࡍࡇ࡜ࡀぢฟࡉࢀ࡚࠸ࡿࠋࡲࡓࠊ(2S,3R,4S)-4-HIL ࡣ㦵᱁➽ࡸ⫢⮚࡟࠾ࡅࡿ࢖ࣥࢫࣜࣥ᢬ᢠᛶࢆᨵ
ၿࡍࡿຠᯝࡶㄆࡵࡽࢀࠊࡑࡢᶵᵓ࡜ࡋ࡚ AMP ࢟ࢼ࣮ࢮࡢάᛶ໬ࢆ௓ࡋࡓ⤒㊰ࡀሗ࿌ࡉࢀ࡚࠸ࡿࠋ⤒ཱྀ⢾ᒀ⑓἞⒪⸆࡜ࡋ࡚ᮇᚅࡉࢀࡿ (2S,3R,4S)-4-HIL ࡣࣇ࢙ࢾࢢ࣮ࣜࢡ✀Ꮚ࡟ࢃࡎ࠿ 0.5 wt%ࡋ࠿ྵࡲࢀ࡚
࠾ࡽࡎࠊ⏘ᴗ฼⏝ࡢࡓࡵ࡟ከᵝ࡞ྜᡂἲࡀࡇࢀࡲ᳨࡛ウࡉࢀ࡚ࡁࡓࠋࡋ࠿ࡋ࡞ࡀࡽࠊ᭱ࡶຠ⋡ⓗ࡞ྜᡂἲ࡛ࡶ❧య㑅ᢥᛶࡢཝᐦ࡞ไᚚࡣ㐩ᡂࡉࢀ࡚࠾ࡽࡎࠊ᭱⤊ⓗ࡟௚ࡢ❧య␗ᛶయ࡜ࡢ࢟ࣛࣝศ๭ࡀᚲせ࡜
࡞ࡿࠋ᭱㏆ࠊ2-amino-3-methyl-4-keto pentanoic acid (AMKP) ࡢࣛࢭ࣑యࢆ㑏ඖࡋࠊ(2S,3R,4S)-4-HIL ࢆ⏕ᡂࡍࡿ㓝⣲࡜ࡋ࡚ Bacillus thuringiensis 2e2 ⏤᮶ AMKP 㑏ඖ㓝⣲ HILDH ࡀྠᐃࡉࢀࡓࠋᮏ㓝⣲ࡣ NADHࢆ⿵㓝⣲࡜ࡍࡿ㑏ඖ཯ᛂ࡟ࡼࡾ 2S,3R,4S యࢆ⏕ᡂࡍࡿࡀࠊࡑࡢ⣧ᗘࡣ 13%࡛࠶ࡾࠊ௚࡟ 7 ✀㢮ࡢ❧య␗ᛶయࡀྠ᫬࡟⏕ᡂࡍࡿࠋᮏ◊✲࡛ࡣࠊ(2S,3R,4S)-4-HIL ࡢຠ⋡ྜᡂࢆ┠ⓗ࡜ࡋ࡚ࠊHILDH ࡢᵓ㐀᝟ሗ࡟ᇶ࡙࠸ࡓ㓝⣲ᨵኚ࡟ࡼࡾࠊAMKP ࣛࢭ࣑య࠿ࡽ (2S,3R,4S)-4-HIL ࢆ㧗⣧ᗘ࡛⏕ᡂࡍࡿேᕤ㓝⣲ࡢ๰ฟࢆヨࡳࡓࠋHILDH ࡜⿵㓝⣲ NADHࠊࡉࡽ࡟ᇶ㉁࢔ࢼࣟࢢ࡜ࡋ࡚ࢥࣁࢡ㓟࡜ࡢ」ྜయࢆ⤖ᬗ໬ࡋࠊX ⥺⤖ᬗᵓ㐀ゎᯒ࡟ࡼࡾ 2.35
Å ศゎ⬟࡛⤖ᬗᵓ㐀ࢆỴᐃࡋࡓࠋࢥࣁࢡ㓟ࡢ⤖ྜᵝᘧ࡜(2S,3R,4S)-4-HIL ࡢࢻࢵ࢟ࣥࢢࢩ࣑࣮ࣗࣞࢩࣙ
ࣥ࡟ࡼࡾࠊ4R య࡜ 4S యࡢ❧య㑅ᢥᛶࡀ 1 ఩ࡢ࢝ࣝ࣎࢟ࢩࣝᇶࢆㄆ㆑ࡍࡿ࢔࣑ࣀ㓟ṧᇶࡢ㐪࠸࡟㉳ᅉࡍࡿࡇ࡜ࢆ᥎ᐃࡋࡓࠋࡉࡽ࡟ࠊ(2S,3R,4S)-4-HILࡀゐ፹㒊఩࡟⤖ྜࡋࡓ㝿࡟ࠊ3 ఩ࡢ࢔࣑ࣀᇶࡢ㓄ྥࢆᅛᐃࡍࡿࡓࡵࡢኚ␗ᑟධ఩⨨ࢆ᥎ᐃࡋࡓࠋࡇ
ࢀࡽࡢᵓ㐀᝟ሗ࡟ᇶ࡙࠸࡚ྛ✀ࡢኚ␗ᑟධࢆ⾜࠸ࠊ᭱⤊ⓗ࡟ 2 ࣧᡤࡢ࢔࣑ࣀ㓟ṧᇶࡢኚ␗࡟ࡼࡾࠊ
AMKP ࣛࢭ࣑య࠿ࡽ(2S,3R,4S)-4-HIL ࢆ⣧ᗘ>99%de ࡛⏕ᡂࡍࡿ HILDH ᨵኚయࢆ๰ฟࡍࡿࡇ࡜࡟ᡂ
ຌࡋࡓ㸦ᅗ㸯㸧
ࠋࡇࢀࡣࠊ3 ࡘࡢ୙ᩧⅣ⣲ࢆཝᐦ࡟

ᅗ㸯㸬AMKP 㑏ඖ㓝⣲ HILDH ࡟ࡼࡿ AMKP ࠿ࡽ
4-HIL ࡬ ࡢ 㑏 ඖ ཯ ᛂ ࡜ ᨵ ኚ 㓝 ⣲ ࡟ ࡼ ࡿ(2S,3R,4S)-4-HIL ࡢ❧య㑅ᢥⓗྜᡂไᚚࡋ࡚࢝ࣝ࣎ࢽࣝ㑏ඖ཯ᛂࢆゐ፹ࡍࡿ㓝⣲ࢆேᕤྜᡂࡋࡓึࡵ࡚ࡢ౛࡛࠶ࡿࠋ

29

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WKHUPDOO\VWDEOHVWUXFWXUHV⌮Ꮫ⣔◊✲⛉໬Ꮫᑓᨷ኱㉺◊✲ᐊ୰ᯘ⪔஧ࠊࢩࣔࣥ࣍ࣛࢪ࣮ࠊᑠᓟㄔஓࠊ኱㉺ៅ୍ࢩ࢔ࣀᯫᶫᆺ㔠ᒓ㞟✚యࡣࠊᵓᡂ⣲Ꮚ࡜ࡋ࡚⏝࠸ࡽࢀࡿ㑄⛣㔠ᒓ࢖࢜ࣥࠊ⁐፹ศᏊࠊ᭷ᶵ㓄఩Ꮚࢆ⤌ࡳྜࢃࡏࡿࡇ࡜࡟
ࡼࡾࠊከᵝ࡞ᶵ⬟ᛶࢆᣢࡗࡓ☢ᛶయࢆᵓ⠏ࡍࡿࡇ࡜ࡀ࡛ࡁ
ࡿࠋᙜ◊✲ᐊ࡛ࡣࠊࡇࢀࡲ࡛࡟ග☢ᛶయࡸࣉࣟࢺࣥఏᑟ☢ᛶయ࡞࡝ࢆሗ࿌ࡋ࡚࠸ࡿ ࠋᮏⓎ⾲࡛ࡣࠊࢼࣀࢳࣕࢿࣝᵓ㐀ࢆ᭷ࡍࡿᙉ☢ᛶయ &R,,>:9 &1 @&O+2 &R: ࠾ࡼࡧ㧗࠸⪏⇕ᛶࢆ♧ࡍᒙ≧࣓ࢱ☢ᛶయ &V&R,,>:9 &1 @&O &V&R: ࡟ࡘ࠸࡚ሗ࿌ࡍࡿࠋ
ࢼࣀࢳࣕࢿࣝᙉ☢ᛶయ &R: ࡣࠊ༢⤖ᬗ࡜ࡋ࡚ᚓࡽࢀࠊ; ⥺⤖ᬗᵓ㐀ゎᯒࡢ⤖ᯝࡼࡾࠊ㑄⛣㔠ᒓ࢖࢜ࣥࡀࢩ࢔ࣀᇶ࡛ᯫᶫࡉࢀࡓ  ḟඖᵓ㐀ࢆ᭷ࡍࡿࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋࡲࡓࠊᮏ
㘒యࡣࠊ┤ᚄ QP ࡟࠾ࡼࡪ኱ࡁ࡞ࢳࣕࢿࣝᵓ㐀ࢆ᭷ࡋ࡚࠸
ࡓࠋᾮయ࣒࣊ࣜ࢘ࢆ⏝࠸ࡓ☢Ẽᐃࡢ⤖ᯝ࠿ࡽࡣࠊ࣮࢟ࣗࣜᗘ .ࠊಖ☢ຊ 2H ࢆ♧ࡍᙉ☢ᛶయ࡛࠶ࡿࡇ࡜ࡀ♧ࡉࢀࡓ ࠋ୍᪉ࠊᒙ≧ࢩ࢔ࣀᯫᶫᆺ㔠ᒓ㞟✚య &V&R: ࡣࠊ༢⤖
ᬗ ; ⥺ᵓ㐀ゎᯒࡢ⤖ᯝࡼࡾࠊ ḟඖࢩ࣮ࢺࡀ㔜࡞ࡗࡓᒙ≧ᵓ㐀ࢆ᭷ࡋ࡚࠸ࡿࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋ&V&R: ࡣࠊ⇕࡟ᑐࡋ࡚Ᏻᐃ࡛࠶ࡾࠊ. ࡟࠾࠸࡚ࡶ⤖ᬗᛶࢆಖࡕࠊྠᵝࡢᒙ≧ᵓ㐀ࢆ᭷ࡋ࡚࠸ࡓࠋࡲࡓࠊ☢໬ᐃࡼࡾࠊ. ௨ୗ࡟࠾࠸࡚཯

ᙉ☢ᛶ㌿⛣ࢆ♧ࡋࠊእ㒊☢ሙ༳ຍ࡟ࡼࡾ཯ᙉ☢ᛶ࠿ࡽᙉ☢ᛶ࡬ኚ໬ࡍࡿ࣓ࢱ☢ᛶⓗᣲືࢆ♧ࡍࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋ࣓
ࢱ☢ᛶࡢ㉳※ࡣࠊ ḟඖࢩ࣮ࢺෆ࡛ᙉ☢ᛶ⛛ᗎࡀ㉳ࡇࡾࠊࡑࡢ
ᙉ☢ᛶࢩ࣮ࢺ㛫ࡣ஫࠸࡟཯ᙉ☢ᛶⓗ࡟㓄ิࡍࡿࡼ࠺࡞☢Ẽ⛛ᗎࢆᙧᡂࡋࠊእ㒊☢ሙ࡟ࡼࡾ཯ᙉ☢ᛶ┦࠿ࡽᙉ☢ᛶ┦࡟㌿⛣ࡍࡿࡇ࡜࡟⏤᮶ࡍࡿ࡜⪃࠼ࡽࢀࡿࠋ

ᅗ㸯㸬(a) CoW ࡢ⤖ᬗᵓ㐀, (b) CoW ࡢᗘ-☢໬᭤⥺(c) CoW ࡢ☢ሙ-☢໬᭤⥺.

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30

3-
ࢯ࣮࣮ࣛỈ⣲〇㐀⏝༙ᑟయග㟁ᴟ࡟ᑐࡍࡿ⾲㠃ࢥ࣮ࢸ࢕ࣥࢢࡢ᳨ウ
Effect of Surface Coating onto a Semiconductor Photoelectrodefor Solar Hydrogen ProductionᕤᏛ⣔◊✲⛉ ໬Ꮫࢩࢫࢸ࣒ᕤᏛᑓᨷ ᇽච࣭ᕊᓊ◊✲ᐊ‫ۑ‬වྂᐶஅ࣭ᕊᓊ⪔࣭ᇽච୍ᡂ ༙ᑟయග㟁ᴟࢆ⏝࠸ࡓග㟁Ẽ໬Ꮫࢭࣝ࡟ࡼࡿỈศゎ཯ᛂࡣࠊኴ㝧ග࡜Ỉࡢࡳ࠿ࡽỈ⣲ࢆ〇㐀ࡍࡿ᪉ἲࡢ୍ࡘ࡜ࡋ࡚ὀ┠ࡉࢀ࡚࠸ࡿࠋ㧗࠸ኴ㝧ග-Ỉ⣲࢚ࢿࣝࢠ࣮ኚ᥮ຠ⋡ࢆ┠ᶆ࡜ࡋࡓሙྜࠊග྾཰ᒙ࡟ࡣࢼ
࣮ࣟࣂࣥࢻࢠࣕࢵࣉ༙ᑟయࢆ⏝࠸ࡿࡇ࡜ࡀᮃࡲࡋ࠸ࠋ୍᪉࡛ࠊࢼ࣮ࣟࣂࣥࢻࢠࣕࢵࣉ༙ᑟయࡢከࡃࡣ㠀㓟໬≀⣔໬ྜ≀࡛࠶ࡿࡀࠊࡇࡢࡼ࠺࡞ᮦᩱࡣࠊ≉࡟㓟໬ⓗ࡞㟁఩ࡸᴟ➃࡞ pH ࡟࠾࠸࡚ࠊ⾲㠃⭉㣗ཬࡧ཯ᛂゐ፹ࡢ⬺ⴠ࡟ࡼࡿ㢧ⴭ࡞ຎ໬ࢆࡋࡤࡋࡤᘬࡁ㉳ࡇࡍⅬࡀㄢ㢟࡜ࡋ࡚ᣲࡆࡽࢀࡿ[1]ࠋࡑࡇ࡛ᮏ◊✲࡛ࡣࠊ㠀㓟໬≀༙ᑟయග㟁ᴟࡢ⪏ஂᛶྥୖࢆ≺࠸ࠊRuO2 ࡟ࡼࡿ⾲㠃⿕そࡢຠᯝࢆ᳨ウࡋࡓࠋග㟁ᴟ⾲㠃ࡢほᐹࡣࠊᾮయ❅⣲ࢺࣛࢵࣉࢆഛ࠼ࡓ㉮ᰝᆺ㟁Ꮚ㢧ᚤ㙾㸦S-4700, ᪥❧㸧ࢆ⏝࠸ࡓࠋ 㟁ᴟࡢග྾཰ᒙ࡟ࡣࠊẚ㍑ⓗ㛗࠸྾཰➃Ἴ㛗㸦900 nm㸧࡜ᗈ࠸ືస㟁఩㸦0.9 VRHE㸧ࢆ୧❧ࡍࡿᮦᩱ࡜ࡋ࡚᭱㏆ሗ࿌ࡉࢀࡓ[2]ࠊ
(ZnSe)0.85(CuIn0.7Ga0.3Se2)0.15 ከ⤖ᬗⷧ⭷ࢆ⏝࠸ࡓࠋග㟁╔ἲ[3]ࢆ⏝࠸࡚ཌࡉ 6-10 nm ࡢ RuO2 ࡛⾲㠃⿕そࡋࡓᚋ࡟㟁ᴟ໬ࡋࠊpH 13 ࡟ㄪ⠇ࡋࡓࣜࣥ㓟࣒࢝ࣜ࢘Ỉ⁐ᾮ୰ࠊ3 㟁ᴟᘧࢭࣝ࡟࠾࠸࡚ 0.6 VRHE ࡟ಖᣢࡋࠊᨃఝኴ㝧⅔↷ᑕୗ࡟࠾࠸࡚ 10
h ௨ୖỈ⣲⏕ᡂ཯ᛂࢆ⾜ࡗࡓࠋࡑࡢ
⤖ᯝࠊRuO2 ⿕そࢆ᪋ࡉ࡞࠸㟁ᴟ࡛
ࡣ 3 h ௨ෆ࡟Ỉ⣲⏕ᡂ㏿ᗘࡀ 10 ศ
ࡢ 1 ࡟పୗࡋࡓࠋ୍᪉ࠊ⿕そࡋࡓᅗ 㸯 㸬 RuO2 ⿕ そ ฎ ⌮ ࡢ ᭷ ↓ ࡟ ࡼ ࡿ ࠊ Ỉ ⣲ ⏕ ᡂ ཯ ᛂ ๓ ᚋ ࡢ(ZnSe)0.85(CuIn0.7Ga0.3Se2)0.15 ග㟁ᴟࡢ⾲㠃 SEM ീࡢኚ໬ࠋ

㟁ᴟ࡛ࡣࠊ⣙ 17 h ࡢ㛫᫂☜࡞㏿ᗘపୗࡀほ ࡉࢀ࡞࠿ࡗࡓࠋᅗ 1 ࡟཯ᛂ๓ᚋࡢ⾲㠃 SEM ീࢆẚ㍑ࡍ
ࡿࠋ↓⿕そࡢࢧࣥࣉ࡛ࣝࡣ⾲㠃࡟↓ᩘࡢࢡࣛࢵࢡ≧ࡢ⭉㣗ࡀ⏕ࡌࡓ୍᪉ࠊ⿕そࡋࡓࢧࣥࣉ࡛ࣝࡣ⾲㠃࡟᭷ព࡞ᙧ≧ኚ໬ࡣほ ࡉࢀ࡞࠸ࡇ࡜࠿ࡽࠊRuO2 ࡀᏳᐃ࡞⿕そᮦ࡜ࡋ࡚ᶵ⬟ࡍࡿࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋ
[1] N. Guijarro et al., Phys. Chem. Chem. Phys. 17 15655 (2015)[2] H. Kaneko et al., Angew. Chemie Int. Ed. 55, 15329 (2016)[3] S. D. Tilley et al., Adv. Funct. Mater. 24 303 (2014)

31

3
Spin-Dependent Transport of Ferromagnetic-Semiconductor
GaMnAs-Based Lateral Spin-Valve Devices
H. Asahara1, T. Kanaki1, S. Ohya1, 2, 3, and M. Tanaka1, 2
1 Department of Electrical Engineering and Information Systems,

The University of Tokyo

2 Center for Spintronics Research Network, The University of Tokyo

3 Institute of Engineering Innovation, Graduate School of Engineering,

The University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Phone : +81-3-5841-6729 E-mail : asahara@cryst.t.u-tokyo.ac.jp

Spin metal-oxide-semiconductor field-effect-transistors (spin MOSFETs), whose source anddrain are composed of ferromagnetic materials, are promising candidates for post-scaling era [1]. In
the previous studies of spin MOSFETs, however, the magnetoresistance (MR) ratios reported so far
were less than 1% [2, 3]. To improve the MR ratio for practical applications, it is necessary to use
ferromagnets that are compatible with semiconductors for the suppression of spin scattering at theinterfaces. The ferromagnetic semiconductor GaMnAs is one of the ideal model materials. We canobtain an atomically abrupt interface between GaMnAs and GaAs. In fact, we have recently obtained
a high MR ratio up to 60% in a GaMnAs-based vertical spin MOSFET [4]. However, in our previous
study of the vertical spin-MOSFET, the gate modulation of the drain current ID was small (± 0.5%)[4]. In this study, we fabricate GaMnAs-based lateral spin MOSFET structures, which are suitablefor efficient gate modulation, and investigate the spin-dependent transport properties of these devices. We show a large MR ratio up to ~10% and successful gate modulation of ID of ~10%.
We fabricated a GaMnAs-based lateral spin-valve device whose channel length d is 200 nm
shown in Fig. 1 (a). We measured the MR characteristics of this device with a magnetic field appliedin the plane along the [110] axis [Fig. 1 (b)]. We obtained a high MR ratio (~ 10%). The MR ratio
remained positive for all in-plane magnetic field directions, which confirms that this signal does not
originate from tunnel anisotropic magnetoresistance (TAMR) but from the spin-valve effect. Furthermore, we fabricated a lateral spin MOSFET structure with d = 100 nm shown in Fig. 2 (a), andsuccessfully modulated ID by applying the gate voltage VGS [Figs. 2 (b)-(d)].
This work was partly supported by Grants-in-Aid for Scientific Research including Specially
Promoted Research, Project for Developing Innovation Systems of MEXT, and Spintronics Research
Network of Japan (Spin-RNJ).
[1] S. Sugahara and M. Tanaka, Appl. Phys. Lett. 84, 2307 (2004).
[2] R. Nakane, T. Harada, K. Sugiura, and M. Tanaka, Jpn. J. Appl. Phys. 49, 113001 (2010).
[3] T. Tahara et al., Appl. Phys. Express 8, 113004 (2015).
[4] T. Kanaki, H. Asahara, S. Ohya, and M. Tanaka, Appl. Phys. Lett. 107, 242401 (2015).
Fig. 1 (a) Schematic sample structure of the
GaMnAs-based lateral spin-valve device
with the channel length d. (b) Magnetic fielddependence of the MR ratio measured at 3.5
K with a source-drain voltage of 100 mV andwith a magnetic field applied in the plane
along the [110] direction when d is 200 nm.
Fig. 2 (a) Schematic sample structure of the
GaMnAs-based spin MOSFET. (b), (c), (d)VGS dependence of ID with the drain voltage
VDS of (b) 350 mV, (c) 300 mV, and (d) 250
mV at 3.5 K when d is 100 nm.

32

3-
㉸ఏᑟ Al-୪ิ஧㔜䝘䝜⣽⥺ InAs-㉸ఏᑟ Al 䝕䝞䜲䝇䛷䛾㉸ఏᑟ㟁ὶ䛾㠀ᒁᡤಙྕ䛾᳨ฟ
Non-Local Signal of Supercurrent
in Al – Double Nanowires InAs – Al deviceᮾி኱ᕤ 㻭䚸㻌 ⌮◊ 㻯㻱㻹㻿㻮䚸㻌 ໭ி኱ 㻯䚸㻌 䝹䞁䝗኱ 㻰ୖ⏣೺ே 㻭䚸ᯇᑿ㈆ⱱ 㻭䚸㙊⏣኱ 㻮䚸బ⸨ὒ௓ 㻭䚸Ṋ㔜᭷♸ 㻭䚸㻷㻚㻌㻸㼕㻯㻘㻌㻿㻚㻌㻶㼑㼜㼜㼑㼟㼑㼚㻰㻘㻌㻷㻚㻌㻰㼑㼜㼜㼑㼞㼠㻰㻘㻌㻸㻚㻌㻿㼍㼙㼡㼑㼘㼟㼛㼚㻰㻘㻌㻴㻚㻌㻽㻚㻌㼄㼡㻯㻚㻰㻘㻌 ᶡⲔΎᝅ 㻭㻚㻮㻌㉸ఏᑟయ୰䛾䜽䞊䝟䞊ᑐ䛿஧䛴䛾㟁Ꮚ䛾䜒䛴䜜䛻䜘䛳䛶ᙧᡂ䛥䜜䜛䚹䛣䛾䜒䛴䜜ᑐ䜢✵㛫ⓗ䛻ศ㞳䛷䛝䜜䜀䚸㐲㝸䜒䛴䜜┦㛵䜢䜒䛴䝇䝢䞁ᑐ䜢స䜚ฟ䛩䛣䛸䛜䛷䛝䜛䚹䜎䛪㉸ఏᑟయ䛸஧䛴䛾㔞Ꮚ䝗䝑䝖䛾᥋ྜ䛷ᐇ㦂䛜⾜䜟䜜䛯䚹㔞Ꮚ䝗䝑䝖䛾㟼㟁䜶䝛䝹䜼䞊䛿ྠ䛨㟁ᴟ䜈䛾஧䛴䛾㟁Ꮚ䛾㏱㐣䜢ጉ䛢䜛䛣䛸䛜䛷䛝䚸䛭䜜䛻䜘䛳䛶ຠ⋡䛾Ⰻ䛔ศ㞳⌧㇟䛜ほ 䛥䜜䛯[1]䚹௚䛻䜒䝘䝜⣽⥺୰䛾㔞Ꮚ䝗䝑䝖䜔⮬ᕫᙧᡂᆺ䛾㔞Ꮚ䝗䝑䝖䜢௓䛧䛯䜽䞊䝟䞊ᑐศ㞳⌧㇟䛜◊✲䛥䜜䛶䛝䛯[2]䚹䛧䛛䛧䚸㔞Ꮚ䝗䝑䝖䛷䛾ศ㞳ᐇ㦂䛷䛿ศ㞳ຠ⋡䛜㟁ᴟ䛸䝗䝑䝖㛫䛾䝖䞁䝛䝹⤖ྜ䛻౫Ꮡ䛩䜛䛯䜑ไᚚ䛜ᅔ㞴䛷䛒䜛䛣䛸䚸䝗䝑䝖䜢ὶ䜜䜛㟁ὶ㔞䛿ᑠ䛥䛔䛣䛸䛛䜙ほᅗ 㻝㻌 ᚤศఏᑟᗘ䛾䝀䞊䝖౫Ꮡᛶ㻌䛜ᅔ㞴䛷䛒䜛䛸䛔䛖ḞⅬ䛜䛒䜛䚹䛭䛣䛷ᡃ䚻䛿஧䛴䛾㔞Ꮚ⣽⥺䛷䛾䜽䞊䝟䞊ᑐศ㞳䛾ᐇ⌧䜢┠ⓗ䛸䛧䛶◊✲䜢⾜䛳䛯䚹㔞Ꮚ⣽⥺䜢⏝䛔䜛䛣䛸䛷ᒁᡤⓗ䛺㟁Ꮚᑐ䛾㏱㐣䜢ᢚไ䛷䛝䚸㧗ຠ⋡䛾ศ㞳䛜ᮇᚅ䛷䛝䜛䛛䜙䛷䛒䜛[3]䚹
ᡃ䚻䛿䜰䝹䝭䝙䜴䝮䛸୪ิ஧㔜 InAs 䝘䝜⣽⥺䛾䝆䝵䝉䝣䝋䞁᥋ྜヨᩱ䜢స〇䛧ᴟప

䛷

ᐃ䛧䛯䚹

ᅗ 1 䛿ᚤศఏᑟᗘ䛾䝀䞊䝖㟁ᅽ౫Ꮡᛶ䛷䛒䜛䚹䝀䞊䝖㟁ᅽ䛻䜘䜚༢୍䝘䝜⣽⥺䛾䜏䛜ఏᑟ䛻ᐤ୚䛩䜛㡿ᇦ䠄SNW䠅䛸஧䛴䛾⣽⥺䛾㡿ᇦ䠄DNW䠅䛾ไᚚ䛻ᡂຌ䛧䛯䚹SNW 䛸 DNW 䛾㡿ᇦ䛷ఏᑟᗘ䛻䝥䝷䝖䞊ᵓ㐀䛜ฟ⌧䛧䚸䛭䛾㒊ศ䛷䛾㉸ఏᑟ㟁ὶ䛾ほ 䛻䜒ᡂຌ䛧䛯䚹䛭䛾⤖ᯝ䚸DNW 㡿ᇦ䛾䝥䝷䝖䞊ఏᑟᗘ4eଶ /݄䛷䛾㉸ఏᑟ㟁ὶ(11 nA)䛜஧䛴䛾 SNW 㡿ᇦ䛾䝥䝷䝖䞊ఏᑟᗘ2eଶ /݄䛷䛾㉸ఏᑟ㟁ὶ䛾࿴(5 nA)䜘䜚㢧ⴭ䛻኱䛝䛔䛣䛸䛜☜ㄆ䛥䜜䛯䚹䛣䜜䛿䜽䞊䝟䞊ᑐศ㞳䛻䜘䜛ቑຍ䛸⪃䛘䜙䜜䜛䚹䛣䛾⤖ᯝ䛿䜽䞊䝟䞊ᑐศ㞳䛾᪂䛯䛺ᐇ㦂⯙ྎ䜢୚䛘䜛䛸䛸䜒䛻䚸䛣䛾ᵓ㐀䛷䛾䝬䝶䝷䝘⢏Ꮚ䛾ᐇ⌧[4]䜈䜒䛴䛺䛜䜛䜒䛾䛷䛒䜛䚹[1] L.Hofstetter, et al., Nature 461,960 (2009). [2] R. Deacon, et al., Nat. Commun.6,7446 (2015). [3] P.
richer, D. Loss Phys. Rev. B 65, 165327 (2002). [4] J. Klinovaja,D. Loss Phys. Rev. B 90, 045118 (2014).

33

3
Orbital magnetic moment anisotropy in heavy metal-Co
heterointerfaces studied by x-ray magnetic circular dichroismᮾ኱⌮⸨᳃◊ࠊ㸰ᮾ኱⌮ᯘ◊ࠊ㸱1,06ࠊ㸲-$65,63ULQJࠊ㸳.(.3)
ụ㟈Ჷ㸯ࠊ<RQJFKDQJ/DXࠊⰪ⏣ᝅᮁ㸯ࠊᆏᮏ⚈ဢ㸯ࠊ㔝୰ὒு㸯ࠊụ⏣ၨ♸ ࠊ୓Ᏹ㌺ ࠊ㕥ᮌ㞞ᘯ ࠊἙᮧ┤ᕫ ࠊỈ∾ோ୍ᮁ ࠊ㕥ᮌᇶᐶ ࠊ㓇ᕳ┿⢝Ꮚ ࠊ㞵ᐑ೺ኴ ࠊᯘᑗග ࠊ⸨᳃῟ 
Dzyaloshinskii-Moriya interaction (DMI) [1,2] is considered to play an essential role in stabilizing
Néel-type domain walls (DW) in 5d heavy metal (HM)/ferromagnet (FM) heterostructures. Such Néeltype DWs could be moved by electric currents due to the existence of spin-orbit torque. Thisphenomenon makes HM/FM heterostructuresa promising candidate for future electrical-control ofmagnetic memory devices. However, the origin of DMI at the HM/FM interfaces is still unclear,making it a great obstacle to design practical devices. In experiment, it has been found that the strengthand direction of DMI at the HM/FM heterointerfaces can be modulated by the HM underlayer [3,4].
Meanwhile, theoretically the orbital magnetic moment anisotropy (OMA) of HM and FM at the
HM/FM heterostructures will also be changed by HM underlayers, which has similar HM-element
dependence to DMI [5]. It suggests that there should be correlation between DMI and OMA at the
HM/FM heterointerfaces.
In this study, the OMA of Co and HM at the HM/Co heterostructures were studied by x-ray magnetic
circular dichroism (XMCD) based on synchrotron
radiation. It has been found that the OMA of Co in the
HM/Co/HM

heterostructuresshows

HM-element

dependence which is similar to that of the strength of
DMI (Fig. 1). The XMCD spectra at the Pt L edge of
Pt/Co/MgO heterostructures were observed, supporting
the fact that the magnetism of Pt can be induced by Co
due to proximity effect. However, negligible OMA of Pt
Fig. 1 HM element-dependent orbital

was observed in the results.

magnetic moment of in HM/Co/HM.
Reference[1] I. E. Dzyaloshinskii, JETP 5 (6), 1259 (1957). [2] T. Moriya, Phys. Rev. 120, 91 (1960).
[3] C. Chen et al., Nat. Commun. 4, 2671 (2013). [4] J. Torrejon et al., Nat. Commun. 5, 4655 (2014).
[5] K. Yamamoto et al., AIP Adv. 7, 056302 (2017)

34

P-
࢖࢜ࣥᾮయࢆ⏝࠸ࡓ 㻼㼆㼀㻛㻺㼎㻙㻿㼞㼀㼕㻻㻟 ⏺㠃ࡢఏᑟไᚚ
Control of Electrical Conduction at PZT/Nb-SrTiO3 Interface throughIonic-Liquid GatingᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷᕝᓮ◊✲ᐊ ⌮໬Ꮫ◊✲ᡤ๰Ⓨ≀ᛶ⛉Ꮫ◊✲ࢭࣥࢱ࣮
す㔝㝯ኴ㑻 ᑠሯ⿱௓ ㈡ᕝྐᩗ ᡴ⏣ṇ㍤ ᕝ㷂㞞ྖ ࠙⫼ᬒࠚ࢖࢜ࣥᾮయࢆࢤ࣮ࢺ⤯⦕య࡜ࡋࡓ㟁Ẽ஧㔜ᒙࢺࣛࣥࢪࢫࢱ࡛ࡣࠊ࢖࢜ࣥᾮయ/༙ᑟయ⏺㠃࡟㟁Ẽ஧㔜ᒙࡀᙧᡂࡉࢀࠊ༙ᑟయᒙ࡟ 1014 cmѸ2 ௨ୖࡢ࢟ࣕࣜ࢔ࡀ⵳✚ࡉࢀࡿ[1]ࠋࡇࡢ್ࡣ඾ᆺⓗ࡞ᙉㄏ㟁యࡀᣢࡘ⮬Ⓨศᴟ್࡜࣮࢜ࢲ୍࣮࡛⮴ࡍࡿࡓࡵࠊ࢖࢜ࣥᾮయ/ᙉㄏ㟁య⏺㠃࡛ࡣ࢟ࣕࣜ࢔ࡢ⵳✚࡛ࡣ࡞ࡃศᴟ཯㌿ࡀ⏕ࡌࡿࡇ࡜ࡀሗ࿌ࡉࢀ࡚࠸ࡿ[2]ࠋᮏ◊✲࡛ࡣ࢖࢜ࣥᾮయࢆ⏝࠸࡚ᙉㄏ㟁య PbTi0.8Zr0.2O3 (PZT)ࡢ⮬Ⓨศᴟࢆ཯㌿ࡉࡏࠊn ᆺ༙ᑟయ࡛࠶ࡿ Nb ࢻ࣮ࣉ SrTiO3 ࡢ㍺㏦≉ᛶࡢኚㄪࢆ⾜ࡗࡓࠋ࠙ᐇ㦂࡜⤖ᯝࠚࣃࣝࢫ࣮ࣞࢨ࣮ሁ✚ἲࢆ⏝࠸࡚
SrTiO3 ᇶᯈୖ࡟ PZT/Nb-SrTiO3 ✚ᒙ⭷ࢆస〇ࡋࡓࠋᚓࡽࢀࡓⷧ⭷ࢆ⏝࠸࡚㟁Ẽ஧㔜ᒙࢺࣛࣥࢪࢫࢱࢆస〇ࡋࠊNb-SrTiO3 ࡢ㍺㏦≉ᛶࢆホ౯ࡋࡓࠋᅗ 1(a)࡟ Nb-SrTiO3 ࡢࢩ࣮ࢺ᢬ᢠ RS ࡢࢤ࣮ࢺ㟁ᅽ౫Ꮡᛶࢆ♧ࡍࠋࢤ࣮ࢺ㟁ᅽ VG ࡀṇ(㈇)ࡢ᫬࡟
RS ࡣప(㧗)᢬ᢠ≧ែࢆ♧ࡋࠊࡇࢀࡽࡣ VG = 0 V ࡛ࡶ⥔ᣢࡉࢀࡿ୙᥹Ⓨᛶࢆ♧ࡋࡓࠋࡲࡓࠊRS ࡣࢤ࣮ࢺ㟁ᅽ࡟ᑐࡋ࡚ࣄࢫࢸࣜࢩࢫࢆᥥࡁࠊᙉㄏ㟁యࡢ
P-E ࣮࢝ࣈ࡜ఝࡓ᣺ࡿ⯙࠸ࡀᚓࡽࢀࡓࠋHallᐃ࠿ࡽồࡵࡓ Nb-SrTiO3 ࡢ 150 K ࡛ࡢ࢟ࣕࣜ࢔ᐦᗘ
ࡣࠊప᢬ᢠ≧ែ࡛ 1.5 × 1014 cmѸ2ࠊ㧗᢬ᢠ≧ែ࡛
5.0 × 1013 cmѸ2 ࡛࠶ࡾࠊ᢬ᢠࡢኚ໬ࡣ୺࡟࢟ࣕࣜ
࢔ᩘࡢኚ໬࡟㉳ᅉࡍࡿࡇ࡜ࡀ♧ࡉࢀࡓࠋ௨ୖࡢ⤖ᯝࡣࠊᅗ 1(b)ࡢࡼ࠺࡟ᙉㄏ㟁య⾲㠃࡟྾╔ࡍࡿ࢖࢜ࣥࡢ➢ྕࡀኚ໬ࡍࡿࡇ࡜࡛ PZT ࡢ⮬Ⓨศᴟࡀ཯㌿ࡉࢀࠊNb-SrTiO3 ࡢ࢟ࣕࣜ࢔ᐦᗘࡀኚㄪࡉࢀ
ࡓࡇ࡜ࢆ♧ࡋ࡚࠸ࡿࠋ

ᅗ 1(a) Nb-SrTiO3 ࡢࢩ࣮ࢺ᢬ᢠ RS ࡢࢤ࣮ࢺ㟁ᅽ౫Ꮡᛶ (b) ࢤ࣮ࢺ㟁ᅽࡀṇࡲࡓࡣ㈇࡟࠾ࡅࡿ PZTࡢศᴟ᪉ྥࡢᴫ␎ᅗ

[1] H. Yuan, M. Kawasaki, Y. Iwasa et al., Adv. Func. Mater. 19 1046 (2009).
[2] A. Herklotz, H. N. Lee, M. R. Fitzsimmons et al., Nano Lett. 17 1665 (2017).

35

3-
Design and synthesis of chiral Ln(III)-W(V) molecular magnets'HSDUWPHQWRI&KHPLVWU\6FKRRORI6FLHQFH2KNRVKL/DERUDWRU\
2ODI6WHIDQF]\N.HQWD,PRWR.RML1DNDED\DVKL6KLQ±LFKL2KNRVKL The synthesis and design of new enantiopure chiral magnets is one of the major challenge in researches on themultifunctional molecule–based magnetic materials [1]. Interplay between magnetic properties and chirality
enables us to observe unique magneto–optical cross–effects such as: magnetic circular dichroism[3], magneto–chiral dichroism [4] and magnetization–induced second harmonic generation (SHG) [2]. In last few
years our group has made significant progresses in this scientific field and reported a uniqueeffect of photoswitching of SHG polarization plane in the FeII–[NbIV(CN)8]4- chiral photomagnets [5]and a novelSHG–active family of LnIII–[MoI(CN)5(NO)]3- molecule–based magnets [6].
 In this work, we report 11
isostructuralIIIcyanido–bridged

V

Ln –[W (CN)8] (Ln = Ce, 1; Pr,2; Nd, 3; Sm, 4; Eu, 5; Gd, 6; Tb,
7; Dy, 8; Ho, 9; Er, 10; Tm, 11)zigzag chains crystallizing in thenon–centrosymmetric space group
C2 (Fig. 1). All coordination
polymers adopt two mirror–image
forms due to the presence ofFig. 1. Zigzag chain structures for both chiral forms of 1 – 11 andχMT (T ) plots measured in Hdc = 1 kOe.

specific spatial organization of ligands around Ln(III) centres. The enantiopure character of assemblies has been
confirmed by natural circular dichroism measurements. Furthermore, these materials reveal non–linear opticaleffect of second harmonic generation (SHG). Magnetic studies revealed that all assemblies exhibit the depopulationof the MJ sublevels of Ln3+ ions due to the splitting of the ground term by the ligand field, weak antiferromagnetic
interactions through LnIII–NC–WV linkages and weak ferromagnetic interaction between spin chains below 6 K for
1, 3, 4, 6, 8 and 9. It is worth to notice that dynamic magnetic susceptibility measurements performed withapplication of an external magnetic field reveal occurrence of frequency dependent signals for 8, 10 and 11.
[1] C. Train, M. Gruselle and M. Verdaguer, Chem. Soc. Rev., 2011, 40, 3297; [2] T. Nuida, T. Matsuda, H. Tokoro,
S. Sakurai, K. Hashimoto, S. Ohkoshi, J. Am. Chem. Soc., 2005, 127, 11604; [3] S. Chorazy, R. Podgajny, W.
Nitek, T. Fic, E. Görlich, M. Rams, B. Sieklucka, Chem. Commun., 2013, 49, 6731; [4] C. Train, R. Gheorghe, V.
Krstic, L. M. Chamoreau, N. S. Ovanesyan, G. Rikken, M. Gruselle and M. Verdaguer, Nature Materials, 2008, 7,729; [5] S. Ohkoshi, S. Takano, K. Imoto, M. Yoshikiyo, A. Namai and H. Tokoro, Nature Photonics, 2014, 8, 65;[6] M. Komine, S. Chorazy, K. Imoto, K. Nakabayashi and S. Ohkoshi, Cryst. Eng. Comm., 2017, 19, 18.

36

3-
⤯⦕యⓗ㑄⛣㔠ᒓ࢝ࣝࢥࢤࢼ࢖ࢻ࣊ࢸࣟ⏺㠃࡟࠾ࡅࡿ㟁Ẽఏᑟ
Conducting hetero-interface between insulating transition-metal
dichalcogenidesᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷᒾబ◊✲ᐊ㻌᯽ཎ㻌 ᝆኴ㻘㻌 ୰㔝㻌 ໷つ㻘㻌 ⋤㻌 ㉺㻘㻌 ᒾబ㻌 ⩏ᏹ㻌␗࡞ࡿ⤯⦕యࢆ᥋ゐࡉࡏࡓ⏺㠃࡟࠾ࡅࡿ㟁ẼఏᑟࡣࠊⰋࡃ▱ࡽࢀࡓ InAs/GaSb ࡬ࢸࣟᵓ㐀ࡢࡳ࡞ࡽࡎ
㓟໬≀[1]ࡸ᭷ᶵ≀[2]ࡢ⏺㠃࡟࠾࠸࡚ࡶᖜᗈࡃほࡉࢀ࡚࠾ࡾࠊ࢚࣊ࣜ࢝ࣝࢵࢪ࣮ࣔࢻ[3]ࡸ 2 ḟඖ㉸ఏᑟ[4]࡞࡝ࠊᵝࠎ࡞≀⌮⌧㇟ࡢ⯙ྎࢆᥦ౪ࡋ࡚ࡁࡓࠋᮏ࣏ࢫࢱ࣮Ⓨ⾲࡛ࡣࠊᮏ◊✲࡟࠾࠸࡚ࡈࡃ᭱㏆Ⓨぢ
ࡋࡓࠊIV ᪘࠾ࡼࡧ VI ᪘ࡢ⤯⦕యⓗ࡞㑄⛣㔠ᒓ࢝ࣝࢥࢤࢼ࢖ࢻ㸦TMDC㸧ࢆ᥋ゐࡉࡏࡓ࣊ࢸࣟ⏺㠃࡟࠾ࡅࡿ㟁Ẽఏᑟ࡟ࡘ࠸࡚ሗ࿌ࡍࡿࠋ
ศᏊ⥺࢚ࣆࢱ࢟ࢩ࣮ἲ࡜࿧ࡤࢀࡿࠊ≀⌮⵨╔ἲࡢ୍✀ࢆ⏝࠸࡚ᅗ 1a ࡟♧ࡍࡼ࠺࡞ WSe2 ࡜ HfSe2 ࠶ࡿ࠸ࡣ ZrSe2 ࢆ✚ᒙࡉࡏࡓ TMDC ࣊ࢸࣟᵓ㐀ࢆస〇ࡋࡓࠋྛᒙࡢཌࡉࡣࠊ཯ᑕ㧗㏿㟁Ꮚ⥺ᅇᢡ
㸦RHEED㸧ࡢᙉᗘ᣺ືࢆࣔࢽࢱ࣮ࡋ࡞ࡀࡽ⢭ᐦ࡟ไᚚࡋ㸦ᅗ 1b, 1c, 1d㸧ࠊ〇⭷ᚋ࡟ X ⥺ᅇᢡᐃ࡟ࡼࡾ㠃ෆ㓄ྥࡀᥞࡗࡓ࢚ࣆࢱ࢟ࢩࣕࣝᡂ㛗ࡀᐇ⌧ࡋ࡚࠸ࡿࡇ࡜ࢆ☜ㄆࡋࡓࠋࡑࢀࡽࡢヨᩱ࡟ᑐࡋ࡚㟁ᴟࢆ⵨╔ࡋࠊ㟁Ẽ᢬ᢠࡢᗘ౫Ꮡᛶࢆホ౯ࡋࡓ࡜ࡇࢁࠊẕయᮦᩱ࡛࠶ࡿ WSe2ࠊHfSe2 ࠾ࡼࡧ ZrSe2 ࡣ࠸ࡎࢀࡶ⤯⦕ⓗ࡛࠶ࡾࠊᐊ࡛ 107 Ȑࢆ㉸࠼ࡿ㟁Ẽ᢬ᢠࢆ♧ࡍࡢ࡟ᑐࡋ࡚ࠊࡇࢀࡽࢆ᥋ྜ

ࡋࡓ࣊ࢸࣟ⏺㠃࡛ࡣ᭷ព࡞㟁Ẽఏᑟࡀ⏕ࡌ࡚࠸ࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋⓎ⾲࡛ࡣࠊఏᑟ⋡ࡢᒙᩘ౫Ꮡᛶࡸ࣮࣍ࣝຠᯝ

ᐃࡢ⤖ᯝ࡞࡝ࡶྜࢃࡏ࡚ࠊࡇ

ࡢ᪂ࡋ࠸㟁Ⲵ⛣ື⏺㠃ࡢヲ⣽࡟ࡘ࠸࡚㆟ㄽࡍࡿࠋᅗ 1㸸a, TMDC ࣊ࢸࣟᵓ㐀ᶍᘧᅗ b-d, ᅗ୰࡟♧ࡋࡓᒙࡢᡂ㛗୰࡟࠾ࡅࡿ RHEED ᙉᗘࡢ᫬㛫ኚ໬

[1] A. Ohtomo et al., Nature 427, 423 (2004).
[2] H. Alves et al., Nat. Mater. 7, 574 (2008).
[3] I. Knez et al., Phys. Rev. Lett. 107, 136603 (2011).
[4] N. Reyren et al., Science 317, 1196 (2007).

37

P-
㉸ప ୗ࡛⏝࠸ࡿ࣒࣊ࣜ࢘㸱⼥ゎᅽຊᆺ ᗘィࡢタィ
A design of Helium 3 melting curve thermometerthat operates at ultra-low temperatureపࢭࣥࢱ࣮࣭⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ㸭ᮧᕝ◊✲ᐊᒣᓮ ⩧ኴ ᮧᕝ ᬛ 㠀㹱Ἴ㉸ఏᑟయࠊ㉸ὶືయ࡞࡝ࡢ␗᪉ⓗ㹀㹁㹑≧ែࡢ≀㉁ࡢ୰࡟ࡣࠊࡑࡢ⏺㠃ࡢᒁᡤⓗᛶ㉁ࡀࣂࣝࢡ࡜኱
ࡁࡃ␗࡞ࡗ࡚࠸ࡿࡶࡢࡀ࠶ࡿࡇ࡜ࡀ▱ࡽࢀࠊࢺ࣏ࣟࢪ
࢝ࣝ㉸ఏᑟయࠊ㉸ὶືయ࡜ࡋ࡚ὀ┠ࡉࢀ࡚࠸ࡿࠋ㉸ὶື࣒࣊ࣜ࢘㸱ࡣࢺ࣏ࣟࢪ࢝ࣝ≀㉁࡜ࡋ࡚▱ࡽࢀ࡚࠾ࡾࠊ୙⣧≀ࡀ㠀ᖖ࡟ᑡ࡞࠸ࡓࡵ࡟ࣂࣝࢡࡢᛶ㉁ࡀࡼࡃ
ゎ᫂ࡉࢀ࡚࠸ࡿࡓࡵࠊࢺ࣏ࣟࢪ࢝ࣝ≀㉁ࡢ⾲㠃≧ែࢆㄪ࡭ࡿࡢ࡟㐺ࡋ࡚࠸ࡿࠋ ㌿⛣ ᗘࡀᩘ㹫㹉ࡢ㉸ὶື࣒࣊ࣜ࢘㸱ࢆ◊✲ࡍࡿୖ࡛ࠊ㉸ప ࡛ࡢṇ☜࡞ ᗘᐃࡣ㠀ᖖ࡟㔜せ࡛࠶ࡿࠋࡋ࠿ࡋ࡞ࡀࡽࠊ㉸ప ࡟࠾ࡅࡿ㧗ᛶ⬟࡞࡟࠾࠸࡚ࠊ ࡸଶ࡞࡝ࡢ᢬ᢠ ᗘィ࡛ࡣࠊప ࡟࡞ࡿ࡯ᅗ 1. ࣒࣊ࣜ࢘ 3 ࡢ┦ᅗ [1]࡝᢬ᢠ್ࡀᛴ⃭࡟኱ࡁࡃ࡞ࡾࠊ⏺㠃⇕᢬ᢠࡶ ିଶ 㹼 ିଷ࡛኱ࡁࡃ࡞ࡿࡓࡵࠊࣀ࢖ࢬࡸ⮬ᕫⓎ⇕࡟ࡼࡗ࡚⿕≀࡜⣲Ꮚ࡜ࡢ㛫࡟ ᗘᕪࡀ⏕ࡌ࡚ࡋࡲ࠺࡜࠸࠺ၥ㢟ࡀ࠶ࡿࠋࡇࡢࡼ࠺࡞ၥ㢟ࡢⓎ⏕ࡋ࡞࠸ࠊ㉸ప ࡟࠾ࡅࡿ᭱㐺࡞ᗘィ࡜ࡋ࡚ࠊ࣒࣊ࣜ࢘㸱⼥ゎᅽຊᆺ ᗘィ㸦㹋㹁㹒㸧ࡀ࠶ࡿࠋ㹋㹁㹒ࡣࠊ࣒࣊ࣜ࢘㸱ࡢ⼥ゎᅽຊࡀ 㹫㹉⛬ᗘࡢప ࡟⮳ࡿࡲ࡛ࠊẚ㍑ⓗ኱ࡁ࡞ ᗘኚ໬ࢆ♧ࡍࡇ࡜ࢆ฼⏝ࡋࡓ ᗘィ࡛࠶ࡿࠋᅽຊࡣ㉸ప ࡟࠾࠸ᅗ㸰. MCT ࡢタィ [1]࡚ࡶ⢭ᐦ࡟ ᐃ࡛ࡁࡿ≀⌮㔞࡞ࡢ࡛ࠊ㹋㹁㹒ࡣ㧗࠸ศゎ⬟࡜෌⌧ᛶࢆࡶࡘࠋᇦࡀͳ ൑  ൑ ͹ͲͲ㹫㹉࡜ᗈ࠸Ⅼࠊ⮬㌟ࡢⓎ⇕ࡀ↓ど࡛ࡁࡿⅬࠊࡲࡓࠊ࣊ࣜ

࣒࢘㸱ࡢ⼥ゎᅽ᭤⥺࡟ ᗘᐃⅬࡀᏑᅾࡍࡿࡓࡵࠊࡑࢀ⮬㌟ࡀ㍑ṇྍ⬟࡛࠶ࡿ࡜࠸࠺Ⅼ࡛ࡶඃࢀ࡚࠸ࡿࠋ
Ⓨ⾲࡛ࡣࠊ⌧ᅾ㐍⾜୰ࡢ㹋㹁㹒ࡢタィ࡟ࡘ࠸࡚ࡶㄝ᫂ࡍࡿࠋ
>@ ⚟ᒣᐶ㸪ᅛయ≀⌮ vol 38

3ϚΠΫϩ೾৴߸ଟॏԽճ࿏ʹΑΔЍઢ TES ಡग़࣮ূDevelopment of microwave SQUID multiplexer forgamma-ray transition-edge sensor array$ ‫ۑ‬ӌ‫ٰ֖ػ‬Ѡ‫޶ڀ‬ອ‫ݣܙ‬দ۞‫߾ٰ֖ׄ܊‬Ɛ%‫ܙ‬ງٰ֖ҟౙ൥ऩ‫זޞ‬իࡱਅ܏ٰ֖ࢊ

ೖদ઒஌໵A,Bɺେ໺խ࢙Aɺߴ‫ߒڮ‬೭Aɺਆ୅‫ڿ‬Bɺฏࢁจ‫ل‬Bɺࢁ৿߂‫ؽ‬B1.

എ‫ܠ‬ɾ໨త
൒ಋମ‫ݕ‬ग़‫ث‬ͷ෼ޫੑೳΛང͔ʹ྇կ͢Δੑೳ͕࣮‫ݱ‬Մೳͳ௒఻ಋసҠ୺ηϯα (Transition-edge sensor,

TES) ͸ɺΑΓߴਫ਼౓ͷ Pu ಉҐମൺಉఆ͕ՄೳͰ͋Δ͜ͱ͔Β֩෺࣭ͷඇഁյ‫΁ࠪݕ‬ͷԠ༻͕‫ظ‬଴͞Ε͍ͯΔɻ͔͠͠ͳ͕ΒɺTES ͸୯Ұૉࢠ͋ͨΓͷ༗‫ײ‬໘ੵ΍Ԡ౴଎౓͕খ͍ͨ͞Ίɺ࣮༻ͷͨΊʹ͸ૉࢠͷΞϨΠԽʹΑΔ‫ݕ‬ग़ޮ཰ͷվળ͕ඞཁͰ͋Δɻ͞ΒʹɺTES ͷಈ࡞Թ౓͸‫ۃ‬௿ԹͰ͋ΓɺΞϨΠૉࢠ਺૿େʹ൐͏ಡग़഑ઢʹΑΔ೤ྲྀೖ౳͕໰୊ʹͳΔͨΊɺ৴߸ଟॏԽճ࿏ͷ։ൃ͕ෆՄܽͰ͋Δɻɹຊ‫Ͱڀݚ‬͸ɺҰຊ͋ͨΓͷಡग़Մೳͳ TES ૉࢠ਺ʹ༗རͳϚΠΫϩ೾৴߸ଟॏԽ๏ [1] ʹ‫ͮ͘ج‬৴߸ଟॏಡग़ճ࿏Λ։ൃͨ͠ɻϚΠΫϩ೾৴߸ଟॏԽͱ͸ɺߴ Q ஋Λ΋ͭ௒఻ಋ‫ثৼڞ‬Λར༻ͨ͠प೾਺ଟ
ॏԽ๏ͷҰͭͰ͋Δɻਤ̍ʹճ࿏ͷ໛ࣜਤΛࣔ͢ɻਤͷΑ͏ʹɺϚΠΫϩ೾఻ૹઢ࿏্ʹҟͳΔ‫ৼڞ‬प೾
਺ (fR ) Λ΋ͭ 1/4 ೾௕‫ثৼڞ‬Λฒ΂ɺSQUID ͱ‫ݺ‬͹ΕΔ TES ͷిྲྀͷؔ਺ͱͳΔՄมΠϯμΫλϯεͰऴ୺͢ΔɻTES ͷిྲྀมԽʹΑͬͯɺ݁߹͞Εͨ SQUID ͷΠϯμΫλϯε͕มԽ͠ɺ‫ৼڞ‬प೾਺͕ม
Խ͕͢ΔͷͰɺTES ͷిྲྀมԽΛ fR ͷมԽͱͯ͠ಡग़͢͜ͱ͕ՄೳͱͳΔɻ

2.

࣮‫݁ͱݧ‬ՌTES ৴߸ͷಡग़ಛੑΛධՁ͢ΔͨΊ Ho-166m

Λ༻͍ͨЍઢরࣹ࣮‫ݧ‬Λߦͬͨɻ࣮‫͍͓ͯʹݧ‬͸ྫྷౚ‫ػ‬ͷ೤ཋԹ౓Λ 100 mK ·Ͱྫྷ٫͠ɺઢ
‫ݯ‬͸ྫྷౚ‫ػ‬ͷ֎ଆʹઃஔ͠ TES ʹরࣹͨ͠ɻಡ
ग़ͨ͠Ѝઢ৴߸ͷ࣌ఆ਺͕͓Αͦ 0.130 ms ͕ಘΒΕɺैདྷ‫ܕ‬୯ૉࢠಡग़࣌ͱಉఔ౓ͷ஋ͱͳͬͨ͜ͱ͔Βɺզʑͷ։ൃͨ͠ϚΠΫϩ೾ಡग़νοϓ͕զʑͷЍઢ৴߸ʹे෼௥ਵ͢Δ଎౓Λ΋ͭ͜ͱΛ࣮ূͰ͖ͨɻ·ͨɺЍઢΛੵࢉ͠ΤωϧΪʔ෼ղೳΛධՁͨ͠ͱ͜Ζɺ϶ EFWHM = 128

eV, 115 eV @122 keV ͱ͍͏஋͕ಘΒΕͨɻಡग़‫ܥ‬ͷࡶԻ‫د‬༩͸ 60 eV ఔ౓Ͱ͋Γɺશମͷ෼ղೳͷࢧ഑త੍໿ཁҼͱ͸ͳ͍ͬͯͳ͍ɻࠓ‫ޙ‬͸ઃ‫ܭ‬ͷ࠷దԽ౳ʹΑΓ͞ΒͳΔࡶԻͷ௿‫ݮ‬Λ

ਤ 1. ϚΠΫϩ೾৴߸ଟॏԽ‫ݪ‬ཧ໛ࣜਤਤΔɻ

[1] J.A B Mates et al, Appl. Phys. Lett 92, (2008).

39

3-

㞟✚ᆺ Co–W ࢜ࢡࢱࢩ࢔ࣀ㘒యࡢࢸࣛ࣊ࣝࢶἼ྾཰≉ᛶ
Terahertz wave absorption of Co-W cyanido-bridged
metal assemblies⌮Ꮫ⣔◊✲⛉໬Ꮫᑓᨷ኱㉺◊✲ᐊྜྷ⏣㑳ဢࠊ኱㔝ᣅ㑻ࠊ஭ඖ೺ኴࠊ୰ᯘ⪔஧ࠊ኱㉺ៅ୍ࢸࣛ࣊ࣝࢶἼࡣࠊศᏊ㛫᣺ືࡸ᱁Ꮚ᣺ືࠊ☢ᛶయࡢᙉ☢ᛶඹ㬆ࠊࣉࣛࢬࣔࣥඹ㬆࡞࡝ࢆບ㉳ࡍࡿ㟁☢Ἴ࡛࠶ࡿࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋᮏ◊✲࡛ࡣࠊ㟁Ⲵ⛣ື ᗘ┦㌿⛣ࢆ♧ࡍࢩ࢔ࣀᯫᶫᆺ஧ḟඖᒙ≧㔠ᒓ㘒య ACo[W(CN)8](3-cyanopyridine)2∙H2O (A = Rb (1), Cs (2)[1])ࢆྜᡂࡋࠊࡇࢀࡽ࡟㛵ࡍࡿࢸࣛ࣊ࣝ
ࢶἼ྾཰ࢆほ ࡋࡓࡢ࡛ࡇࢀࢆሗ࿌ࡍࡿࠋ
1 ࡢ⢊ᮎヨᩱࡣ CoIICl2∙6H2Oࠊ3-ࢩ࢔ࣀࣆࣜࢪࣥ࡜ RbCl ࡢΰྜ⁐ᾮ࡟ Rb3[W(CN)8]∙H2O ࡜ RbCl ࡢΰྜ⁐ᾮࢆ⁲ୗࡋࠊ24 ᫬㛫ᨩᢾࡍࡿࡇ࡜࡛ᚓࡽࢀࡓࠋࡲࡓࠊ1 ࡢ༢⤖ᬗࡣ H Ꮠ⟶୰࡛ΰྜ⁐ᾮࢆᣑᩓࡉࡏࡿࡇ࡜࡛ᚓࡽࢀࡓࠋ2 ࡢ⢊ᮎヨᩱࡣ᪤ሗࡢ᪉ἲࢆ⏝࠸࡚ྜᡂࡋࡓࠋ296 K ࡟࠾ࡅࡿ 1 ࡢ༢⤖ᬗᵓ㐀ゎᯒ࠿ࡽࠊ1 ࡣ୕ᩳᬗ⣔㸦✵㛫⩌㸸P1̄㸧࡟ᒓࡋ࡚࠾ࡾࠊࢩ࢔ࣀᇶ࡟ࡼࡗ࡚ᯫᶫࡉࢀࡓ Co ࡜ W ࠿ࡽᵓᡂࡉࢀࡿ஧ḟඖᒙ≧ᵓ㐀ࡀᙧᡂࡉࢀ࡚࠸ࡿࡇ࡜ࡀ᫂ࡽ࠿࡜࡞ࡗࡓ㸦ᅗ 1㸧ࠋࡲࡓ 2 ࡣ 1 ࡜ྠᙧࡢ⤖ᬗᵓ㐀ࢆ᭷ࡋ࡚࠸ࡓࠋᒙ㛫࡟ࡣࣝࣅࢪ࣒࢘࢖࢜ࣥ Rb+ཬࡧỈศᏊࡀᏑᅾࡋ࡚࠸ࡓࠋࡲࡓࠊ1 ࡢ 0.5 T☢ሙୗ࡟࠾ࡅࡿ☢໬⋡ࡢ ᗘ౫Ꮡᛶࢆ

ᐃࡋࡓ࡜ࡇࢁࠊ

3-䝅䜰䝜䝢䝸䝆䞁ᗘࢆୗࡆࡿࡇ࡜࡟ࡼࡗ࡚ࣄࢫࢸࣜࢩࢫࢆక࠺☢໬⋡ࡢᛴ⃭࡞ῶᑡࡀぢࡽࢀࡓ㸦ᅗ 2㸧
ࠋ
ࡇࢀࡼࡾࠊ
1 ࡀ㧗

࡛ࡣ CoII

Co

W

V

HS–W

Rb

ࡢ㟁Ꮚ≧ែࢆ♧ࡋࠊప ࡛ࡣ CoIIILS–WIV ࡢ㟁Ꮚ≧ែࢆ♧ࡋ࡚࠸ࡿ࡜⪃࠼ࡽࢀࡿࠋ
 1 ࡢࢸࣛ࣊ࣝࢶ㡿ᇦࡢ྾཰≉ᛶ࡟ࡘ࠸࡚ࠊࢸࣛ࣊ࣝࢶ᫬
㛫㡿ᇦศගἲ࡟࡚ ᐃࡋࡓࠋࡑࡢ⤖ᯝࠊᐊ࡟࠾࠸࡚ 1 THzbc 1. 1 ࡢ a ㍈᪉ྥ࠿ࡽࡢ⤖ᬗᵓ㐀.
ᅗO, a௜㏆࡟」ᩘࡢ྾཰ࡀほ ࡉࢀࡓࠋࡲࡓࠊ2 ࡢࢫ࣌ࢡࢺࣝ࡜

4ࡉࢀࡓࡇ࡜࠿ࡽࠊࡇࡢ྾཰ࡀᒙ㛫ࡢ࢔ࣝ

3࢝ࣜ㔠ᒓ࢖࢜ࣥ࡜㛵㐃ࡋࡓࡶࡢ࡛࠶ࡿ࡜♧၀ࡉࢀࡓ[2]ࠋࡲ

FMT / cm K mol」ᩘࡢ྾཰ࡀほ-1ẚ㍑ࡋࡓ࡜ࡇࢁࠊ1 THz ௜㏆࡟࠾࠸࡚ 1 ࡜␗࡞ࡿ࿘Ἴᩘ࡟

ࡓࠊᾮయ࣒࣊ࣜ࢘ࢆ෭፹࡜ࡋࡓࢡࣛ࢖࢜ࢫࢱࢵࢺࢆ⏝࠸࡚
1 ࡢ⢊ᮎヨᩱࡢࢸࣛ࣊ࣝࢶ྾཰ࢫ࣌ࢡࢺࣝࡢ ᗘ౫Ꮡᛶࢆ
ᐃࡋࡓ࡜ࡇࢁࠊ㟁Ⲵ⛣ືᗘ┦㌿⛣࡟కࡗ࡚྾཰࿘Ἴᩘ

CoIIHS–WV

3

S = 3/2 S = 1/2

180 K

2

217 K

1

CoIIILS–WIV
S=0 S=00100ࡀኚ໬ࡋࡓࠋ
[1] Y. Arimoto, S. Ohkoshi, Z. J. Zhong, H. Seino, Y. Mizobe, K.
Hashimoto, J. Am. Chem. Soc., 2003, 125, 9240. [2] S. Ohkoshi, M.
Yoshikiyo, A. Namai, K. Nakagawa, K. Chiba, R. Fujiwara, H.
Tokoro, Sci. Rep., 2017, 7, 8088.

1

40

150

200
250
Temperature / K

ᅗ 2. 1 ࡢ☢໬⋡ ᗘ౫Ꮡᛶ.

300

3
*D$V͹ྯًࢢ‫ڠ‬໒ྯًԾͶ͕͜ΖޭχϪηφয়ସ͹؏଎Observation of light-dressed states under resonant
excitation of excitons in GaAs
ཀྵָ‫ڂݜܧ‬Ռ෼ཀྵָ઒ߊʀౣ໼‫࣪ڂݜ‬$ɼ෼੓‫ॶڂݜ‬%ɼఁԻιϱνʖ&
࣪୫༖ଢ$ɼۜথऴ%ɼवࢃӵช%ɼౣ໼྆$& ൔ಍ରͶޭΝলࣻͤΖͳɼՃుࢢଵ͖Δఽ಍ଵͶుࢢ͗ྯً͠ΗΖɽ͞͹ͳ͘ɼՃుࢢଵͶ‫݂͚ۯ‬ͺਜ਼͹ు՛Ν࣍ͯ६ཽࢢͳΊ͵ͤ͞ͳ͗Ͳ͘ɼਜ਼޺ͳ‫ͻݼ‬ΗΖɽుࢢͳਜ਼޺͹ؔ͹έʖϫϱӀྙΉͲߡྂ
ͤΖͳɼൔ಍ର͹ޭ‫ٷ‬फͺʰྯًࢢʤH[FLWRQʥʱͳ͏͑଍ളয়ସͶΓͮͱࢩഓ͠ΗΖ͞ͳ͗Κ͖Ζɽࣰ
ࡏɼఁԻͶ͕͜Ζൔ಍ର͹ޭ‫ٷ‬फηϘέφϩͺྯًࢢͶΓΖӸ͏‫ٷ‬फતΝࣖͤʤਦ E ࠉતʥɽ
͞͹Γ͑͵‫ٷ‬फતͶ‫ڠ‬໒ͪ͢‫ޭ͏ک‬ΝলࣻͤΖ

D

˂Wͳɼుࢢਜ਼޺ଲ͗ࡠΖ୉͘͵ు‫ـ‬෾‫ޭͳۅ‬ు৖͗

3XPS

*D$V

3UREH

‫ڠ‬ଚͪ͢ʰޭχϪηφয়ସʱ͗ࡠΔΗΖɽ͞͹݃

EՎɼ΍ͮͳ΍ୱ९Ͷͺ‫ٷ‬फϒʖέ͗෾࿀ͤΖ

Optical Density>@ɽ͖͢͢‫ًྯک‬ԾͲͺɼྯًࢢಋ࢞͹૮‫ࡠޕ‬༽ʤଡରްՎͳ͏͑ʥ͗ໃࢻͲ͘͵͚͵ΕɼޭχϪηφয়ସ΍෵ࡸԿͤΖͳߡ͓ΔΗΖɽޭχϪηφয়ସ͹ཀྵմͺɼ֐͖ΔޭΝ೘ࣻͤΖ͞ͳ͵͚ࣙ൅దͶ୉͘͵ు‫ـ‬෾‫͗ۅ‬ਫ਼ΉΗΖྖࢢ‫ڿ‬क़૮ʤྯًࢢ͹ %(& ͵ʹʥΝཀྵմͤΖ৏Ͳ΍༙ྙ͵घ͖͗Εͳ͵Ζɽ

2+HDY\+ROH
([FLWRQ/LJKW+ROH
([FLWRQ

10ͨ͞Ͳըʓͺϛϱϕʗϕϫʖϔ෾ޭ๑Ν༽͏ɼ

1.51

1.52

Photon Energy (eV). ͶྮΏͪ͢ᛞԿΪϨΤϞʤ*D$Vʥ͹ࢀ࣏‫݃ݫ‬ধΝଲেͶޭχϪηφয়ସ͹ޭָԢ౶Ν௒΄ͪɽਦ ɿD  ϛϱϕʗϕϫʖϔ๑͹ໝࣞਦɽE  ࠉતʁ͞͹घ๑ͲͺࢾྋͶ‫͏ک‬ϛϱϕޭΝলࣻ͢ͱޭχޭྯً͵͢Ͳ͹‫ٷ‬फηϘέφϩɽ್झྪ͹ྯًࢢϪηφয়ସΝࡠΕɼ͍ΖஙԈ࣎ؔ Δt Νͯ͜ͱओϒʖέ͍͗Ζɽ৯ͯ͘તʁޭྯًͪ͢ͳ͘͹‫ٷ‬फ͏ϕϫʖϔޭΝ೘ࣻͤΖ͞ͳͲɼͨ͹࣎ࠃͶ͕͜ηϘέφϩɽ‫צ‬৯͖Δஈ৯΃ͳྯً‫ౕک‬ΝଁΏ͢Ζࢾྋ͹‫ٷ‬फηϘέφϩΝ଎ఈͤΖʤਦ  D ʥɽͱ͏ΖɽϛϱϕʗϕϫʖϔஙԈ࣎ؔͺSVɽͨ͹݃ՎΝਦ  E ͹৯ͯ͘તͳ͢ͱࣖͪ͢ɽங
Ԉ࣎ؔ͹SV ͺϛϱϕޭ͹লࣻ஦Ͷ૮౲ͤΖɽϛϱϕޭͺ॑͏ਜ਼޺ྯًࢢʤ+HDY\+ROH([FLWRQʥͶ‫ڠ‬໒͢ͱ͕Εɼྯً‫ౕک‬Ν৏͝ͱ͏͚ͳʤ‫צ‬৯ˢஈ৯ʥɼྯً͠Ηͪϒʖέ͹෾࿀͗‫ݡ‬ΔΗΖɽ͖͢͢͵͗Δ෾࿀ͺ΍ͳ͹‫ٷ‬फϒʖέͶଲ͢ͱඉଲসͲ͍ΕɼଡରްՎ͹Ӫ‫ݳ͗ڻ‬Ηͱ͏ΖɽߪԍͲͺྯًড়݇ΏஙԈ࣎ؔ΃͹ғଚ੓΍ࣖ͢ɼ؏଎͠Ηͪ෾࿀͹෼ཀྵదً‫ݱ‬Ͷͯ͏ͱߡࡱͤΖ༩ఈͲ͍Ζɽ>@ 06DEDHWDO3K\V5HY%
 5   

41

3-
pᆺ
ᆺࢤ࣐ࣝࢽ࣒࢘࠿ࡽὀධࡋࡓඹ㬆ࢺࣥࢿࣝ࢟ࣕࣜ࢔࡟ࡼࡿ
㕲㔞Ꮚ஭ᡞ୰ࡢ㔞Ꮚࢧ࢖ࢬຠᯝࡢ᳨ฟ
Quantum size effect in a Fe quantum well detected by resonant tunneling carriers
injected from a p-type Ge semiconductor electrodeᕤᏛ⣔◊✲⛉㟁Ẽ⣔ᕤᏛᑓᨷ㻌 ⏣୰䞉኱▮◊✲ᐊ㻌㕥ᮌுኴ䠈ⱝᯘຬᕼ䠈ᒸᮏᾈᖹ䠈⏣୰㞞᫂䠈኱▮ᚸ㻌[1] Z-Y Lu and X.-G. Zhang, Phys. Rev. Lett. 94, 207210(2005).
[2] T. Nozaki et al., Phys. Rev. Lett. 96, 027208 (2006).
[3] T. Niizeki et al., Phys. Rev. Lett. 100, 047207 (2008).
[4] P. Sheng et al., Appl. Phys. Lett. 102, 032406 (2013).
[5] R. S. Liu et al., Phys. Rev. B 87, 024411 (2013).
[6] B. S. Tao et al., Phys. Rev. Lett. 115, 157204 (2015).
[7] R. Suzuki et al., submitted.

42

Normalized d2I/dV2 (a.u.)

Normalized dI/dV (a.u.)

Double-barrier magnetic tunnel junctions (DBMTJs) with a ferromagnetic quantum well (QW)
are promising for future quantum spintronics devices. The quantized energy levels in ferromagnetic
QWs are half metallic and thus are expected to increase tunnel magnetoresistance (TMR) [1]. In
DBMTJs, the TMR ratio can be modulated by a bias voltage, which will bring new functionalities tospintronic devices. Until now, in the studies on the double-barrier metal-based MTJs, metal layers havebeen used for carrier injection [2 – 6]. However, neither negative differential resistance nor TMR
enhancement has been reported for DBMTJs. Here, we use a semiconductor (SC) electrode to injectcarriers to Fe QWs. SCs have a small Fermi surface and the carriers have small in-plane wave vectors
compared to metals. Thus, each subband in the Fe QW will be detected separately when injecting
carriers from SCs, which will enhance resonant tunneling and improve the spin-polarization of thetunneling current in the Fe QWs.
In this study, we grew DBMTJs composed of Co (20 nm)/ Fe (20 nm)/ MgO (3 nm)/ Fe QW (dnm)/ MgO (2 nm)/ Ge:B (85 nm) on a p+-Ge(001) substrate using molecular beam epitaxy. The
thickness d of the Fe QW layer is varied from 5.6 to
7.0 nm, and the boron doping concentration in Ge:B(a)Parallelis 4×1019 cm-3. The TMR ratio was 137 % at 297 K
d = 5.7nm
magnetization
3.5 K
and 237 % at 3.5 K with d = 6.4 nm at a bias voltage
V = -10 mV, where holes were injected from the Ge:B
layer to the DBMTJ. Figure 1 shows the ݀‫ ܫ‬Τܸ݀ െ ܸ
1and ݀ଶ ‫ܫ‬Τܸ݀ ଶ െ ܸ curves of the DBMTJs with
d = 6.0 nm
various d. We observed oscillations in the curves. One
1
can see that dips or peaks are continuously shifted
d = 6.4 nm
1with d (see the same color arrows, which are assigned
1
Normalized at 0 V
d = 6.7 nm
to the same resonant level). Using the phaseaccumulation model, the dip positions are well
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Bias voltage V (V)reproduced by the resonant levels in the Fe QW(b) Parallel magnetization d = 5.7nm
detected by holes in the Ge:B layer. We have
3.5 K
successfully observed the quantum size effect using
d = 6.0 nm+
holes injected from the p -Ge layer into the Fe QWs
0for the first time [7]. This work was partly supported
0d = 6.4 nm
by Giants-in-Aid for Scientific Research and0
Spintronics Research Network of Japan.

-0.6

d = 6.7 nm

0Normalized at 0.5 V

-0.4

-0.2
0
0.2
Bias voltage V (V)

0.4

0.6

Fig. 1 ݀‫ܫ‬Τܸ݀ െ ܸ and ݀ ଶ ‫ܫ‬Τܸ݀ ଶ െ ܸ curvesof DBMTJs with various d. The oscillations areobserved both at positive and negative bias
voltages.

3-㸰ᒙࢢࣛࣇ࢙ࣥࡢ zLL㸦ࢮࣟࣛࣥࢲ࢘‽఩㸧࡟࠾ࡅࡿ㠀ᒁᡤ㍺㏦ ᐃNon-local transport in bilayer graphene under magnetic fieldᕤᏛ⣔◊✲⛉㻌 ≀⌮ᕤᏛᑓᨷ㻌 ᶡⲔ◊✲ᐊ㻌⏣୰ᮍ⩚Ꮚ䚸ᓥᓮ♸ஓ䚸㻵㼢㼍㼚㻌㻮㼛㼞㼦㼑㼚㼑㼠㼟䚸㇂ཱྀᑦ䚸Ώ㎶㈼ྖ䚸ᒣᮏ೔ஂ䚸ᶡⲔΎᝅ㻌࣮࣍ࣝຠᯝࡣ㔠ᒓࡸ༙ᑟయ࡟☢ሙࢆ࠿ࡅࡓ≧ែ࡛㟁ሙࢆ༳ຍࡋࡓ࡜ࡁࠊ㟁Ꮚࡀ㟁ሙ࡟ᑐࡋ࡚ᆶ┤࡞࣮ࣟࣞࣥࢶຊࢆឤࡌ࡚᭤ࡀࡿ⌧㇟࡛࠶ࡿࠋ☢ሙࡀ࡞࠸࡟ࡶ࠿࠿ࢃࡽࡎ㟁Ꮚࡀ㟁ሙ࡟ᑐࡋ࡚ᆶ┤࡞ຊࢆཷࡅࡿ⌧㇟ࢆ⥲⛠ࡋ࡚␗ᖖ࣮࣍ࣝຠᯝ࡜࿧ࡪࠋ
Ⅳ⣲ཎᏊࡢ⻏ࡢᕢ᱁Ꮚ≧㸰ḟඖ≀㉁࡛࠶ࡿࢢࣛࣇ࢙࡛ࣥࡣ␗ᖖ࣮࣍ࣝຠᯝࡢ୍✀࡛࠶ࡿࠕࣂ࣮࣮ࣞ࣍
ࣝຠᯝࠖࡀ㉳ࡇࡿࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋࣂ࣮࣮ࣞ࣍ࣝຠᯝࡣ࣮࣋ࣜ᭤⋡ࡀ☢ሙ࡜ఝࡓാࡁࢆࡍࡿࡇ࡜࡛
㉳ࡇࡿࡀࠊ࣮࣋ࣜ᭤⋡ࡣࣂࣥࢻࢠࣕࢵࣉࡀ㛤࠸࡚࠸ࡿ࡜ࡁࡢࡳ᭷㝈࡜࡞ࡿࠋ௒ࡲ࡛ࣂ࣮࣮ࣞ࣍ࣝຠᯝࡣ
እ㒊㟁ሙࡸᇶᯈ࣏ࢸࣥࢩࣕࣝࢆ౑ࡗ࡚ࢠࣕࢵࣉࢆ࠶ࡅࡓ≧ែ࡛ほࡉࢀ࡚ࡁࡓ[1][2][3]ࠋ

㏆ᖺᩘᒙࢢࣛࣇ࢙ࣥࡢ zLL ࡛ࡣ㟁Ꮚ┦㛵࡟ࡼࡗ࡚ࢫࣆࣥ࡜ࣂ࣮ࣞࡢᑐ⛠ᛶࡀ⮬Ⓨⓗ࡟◚ࢀ࡚ LAF(layer anti ferromagnetic)࡜࠸࠺≧ែࡀⓎ⌧ࡋࠊࢠࣕࢵࣉࡀ㛤ࡃࡇ࡜ࡀࢃ
࠿ࡗ࡚ࡁࡓ[4][5]ࠋࢠࣕࢵࣉࡀ㛤࠸࡚࠸ࡿ࡞ࡽࡤ࣮࣋ࣜ᭤⋡ࡀ⏕ࡌࡿྍ⬟ᛶࡀ࠶ࡿ[6]ࠋᡃࠎࡣ zLL ࡢ LAF ࢠࣕࢵࣉ୰࡛ࣂ࣮࣮ࣞ࣍ࣝຠᯝࢆ
ほࡍࡿࡓࡵࡢᐇ㦂ࢆ⾜ࡗࡓࠋࣂ࣮࣮ࣞ࣍ࣝຠᯝࡣ࣮࣍ࣝ㟁ᅽࢆ⏕ࡌ࡞࠸ࡢ࡛㏻ᖖࡢ࣮࣍ࣝ

᳨ฟࡍࡿࡇ࡜ࡣ࡛ࡁࡎࠊ㠀ᒁᡤ㍺㏦

ᐃ࡛ᐃࢆ⏝࠸ࡓ㸦ᅗ 1㸧ࠋ

LAF ࢠࣕࢵࣉࡣᩘ meV ௨ୗ࡜ᑠࡉ࠸ࡢ࡛ 1.6 K ࡢప☜ㄆࡋࡓࠋ㟁Ⲵ୰ᛶⅬ㸦ᅗࡢ୰ኸ㒊㸧᢬ᢠࡢᴟ኱ࡀほࢠࣕࢵࣉࡀᏑᅾࡍࡿࡇ࡜ࢆ☜࠿ࡵࡓᚋࠊ㠀ᒁᡤ㍺㏦

࡛ࢠࣕࢵࣉࢆ
ࡉࢀࠊLAFᅗ㸯㸬㠀ᒁᡤ㍺㏦

ᐃᐃࢆ⾜ࡗࡓࠋ

LAF ≧ែ㸦ᅗࡢ୰ኸ㒊㸧࡛㠀ᒁᡤ᢬ᢠࡀቑ኱ࡍࡿࡩࡿࡲ࠸ࡀぢࡽࢀࡓ(ᅗ ୗ㸧ࠋᒁᡤ᢬ᢠ࡜㠀ᒁᡤ᢬ᢠࡢ

ᗘ౫Ꮡᛶࡣࣂ࣮࣮ࣞ࣍ࣝຠᯝ௨እ࡛㠀ᒁᡤ᢬ᢠࢆ⏕ࡌ࠺ࡿ௚ࡢせᅉࡔࡅ࡛ࡣㄝ᫂ࡀࡘ࠿ࡎࠊࣂ࣮࣮ࣞ࣍ࣝ
ຠᯝࡀ㉳ࡁ࡚࠸ࡿྍ⬟ᛶࡀ㧗࠸࡜⪃࠼࡚࠸ࡿࠋ
[1] R.V. Gorbachev, et.al. science 346, 448 (2014)[2]M. Sui, et.al. nature phys. 11, 1027 (2015)[3]Y. Shimazaki, et.al. nature phys. 11,1032 (2015)[4]M. Kharitonov, et.al. PRB 85, 155439 (2012)ᅗ㸰㸬1.6 K, 2T ☢ሙୗ

[5]J. Velasco, et.al. nature nanotechnol. 7, 156 (2012)ᒁᡤ᢬ᢠ㸦ୖ㸧࡜㠀ᒁᡤ᢬ᢠ㸦ୗ㸧

[6]F. Zhang, et.al. PRL 106, 156801 (2011)

43

3
ࢩ࢔ࣀᯫᶫᆺ )H ,, ࢫࣆࣥࢡࣟࢫ࣮࢜ࣂ࣮ࢿࢵࢺ࣮࣡ࢡ㘒య࡟࠾ࡅࡿ㔠ᒓ⨨᥮ຠᯝ,QIOXHQFHRIPHWDOVXEVWLWXWLRQLQF\DQLGREULGJHG)H ,, VSLQFURVVRYHUFRPSRXQGV⌮Ꮫ⣔◊✲⛉໬Ꮫᑓᨷ኱㉺◊✲ᐊ஭ඖ೺ኴࠊ㧗㔝ៅ஧㑻ࠊ኱㉺ៅ୍࠙⥴ゝࠚᙜ◊✲ᐊ࡛ࡣࠊࢩ࢔ࣀᇶ࡟ࡼࡾ㔠ᒓ࢖࢜ࣥࡀᯫᶫࡉࢀࡓࢩ࢔ࣀᯫᶫ㔠ᒓ㘒య࡟࠾࠸࡚ࠊගࡸ‵ᗘ࡜࠸ࡗࡓእⓗ่⃭࡟ࡼࡿ☢Ẽ≉ᛶไᚚ࡞࡝ᵝࠎ࡞≀ᛶࢆሗ࿌ࡋ࡚ࡁࡓ>@ࠋ≉࡟ࠊ>1E,9 &1 @࡜ )H,, ࢆ⤌ࡳྜࢃࡏࡓ⣔࡟࠾࠸࡚ࠊගㄏ㉳ )H,, ࢫࣆࣥࢡࣟࢫ࣮࢜ࣂ࣮࡟ᇶ࡙ࡃ☢ᛶࡢࢫ࢖ࢵࢳࣥࢢ⌧㇟ࢆሗ࿌ࡋ࡚࠸ࡿ
>@ࠋᮏ◊✲࡛ࡣࠊගㄏ㉳ࢫࣆࣥࢡࣟࢫ࣮࢜ࣂ࣮ᙉ☢ᛶࢆほ ࡋ࡚࠸ࡿ )H,,>1E,9 &1 @ ࣆࣜࢪࣥ࢔ࣝࢻ࢟ࢩ࣒ Â+2 ࡢ )H ࢖࢜ࣥࢆ &R ࢖࡛࢜ࣥ㒊ศ⨨᥮ࡋࡓ໬ྜ≀ࠊ )H,,íx&R,,x >1E,9 &1 @ ࣆࣜࢪࣥ࢔ࣝࢻ࢟ࢩ࣒ Âz+2 x  ࡢྜᡂ࡜ࡑࡢ☢Ẽ≉ᛶ࡟㛵ࡋ࡚ሗ࿌ࡍࡿ>@ࠋ࠙ᐇ㦂ࠚ┠ⓗ໬ྜ≀ࡣࠊ.>1E &1 @Ỉ⁐ᾮ࡜ )H&Oࠊ&R&Oࠊ࢔ࢫࢥࣝࣅࣥ㓟ࠊࣆࣜࢪࣥ࢔ࣝࢻ࢟ࢩ࣒ࡢΰ
ྜỈ⁐ᾮࡢ཯ᛂ࡟ࡼࡾᚓࡓࠋ≀ᛶホ౯ࡣඖ⣲ศᯒࠊ⢊ᮎ ; ⥺ᅇᢡ ;5' ࠊ㉥እ྾཰ࢫ࣌ࢡࢺࣝ ,5 ࠾ࡼࡧᾮయ
+H ࢆ෭፹࡜ࡋ࡚⏝࠸ࡓ㉸ఏᑟ㔞Ꮚᖸ΅ィ 648,' ࡟ࡼࡾ⾜ࡗࡓࠋ࠙⤖ᯝ࡜⪃ᐹࠚඖ⣲ศᯒࡼࡾ⤌ᡂࡣ )H>1E &1 @ ࣓ࢳࣝࣆࣜࢪࣥ Â+2 ࡜ุ᫂ࡋࡓࠋ⢊ᮎ ; ⥺ᅇᢡࣃࢱ࣮ࣥࡢ 5LHWYHOG ゎᯒ⤖ᯝ࠿ࡽࠊᚓࡽࢀࡓ໬ྜ≀ࡣ඲࡚ྠ⣔ࡢ⤖ᬗᵓ㐀ࢆ᭷ࡋ࡚࠸ࡿࡇ࡜ࡀ♧၀ࡉࢀࡓࠋ
✵㛫⩌ࡣṇ᪉ᬗ Ia ࡛࠶ࡾࠊ)H,, ࢧ࢖ࢺ࡟ࡣ᭷ᶵ㓄఩Ꮚࡢ 1 ཎᏊ  ࡘ࡜ࢩ࢔ࣀᇶࡢ 1 ཎᏊ  ࡘࡀ㓄఩ࡋࠊ
1E ࢧ࢖ࢺ࡟㓄఩ࡋࡓ  ࡘࡢࢩ࢔ࣀᇶࡢ࠺ࡕ  ࡘࡀ )H ࢧ࢖ࢺ࡜ᯫᶫࡋࠊṧࡾࡢ  ࡘࡣᯫᶫࡋ࡚࠸࡞࠿ࡗ
ࡓࠋ&R ࡢ⨨᥮㔞ࡀቑຍࡍࡿ࡟ࡘࢀ࡚ࠊ᱁Ꮚᐃᩘࡣᑡࡋࡎࡘῶᑡࡍࡿࡇ࡜ࡀุࡗࡓࠋࡇࢀࡣࠊ&R,, ࡢ࢖༙࢜ࣥᚄࡀ )H,, 㧗ࢫࣆࣥ S  ࡟ẚ࡭࡚ࡸࡸᑠࡉ࠸ࡇ࡜࡟㉳ᅉࡍࡿ࡜⪃࠼ࡽࢀࡿࠋ☢໬⋡ᗘ౫Ꮡᛶࡢᗘ✚ F0T ࡢᐃࡢ⤖ᯝࠊ. ࡛ࡢF0T ್ࡣ )H 㧗ࢫࣆࣥS  ࠊ&R 㧗ࢫࣆࣥS  ࠊ1E,9 S  ࡢྜ,,ィ࠿ࡽィ⟬ࡉࢀࡿ್࡜୍⮴ࡋࡓࡀࠊ್ࡀῶᑡࡀほ,,ᗘࢆୗࡆࡿ࡜ )H ࢆྵࡴ඲࡚ࡢ໬ྜ≀࡟࠾࠸࡚  . ௜㏆࠿ࡽF0T

ࡉࢀࡓࠋ,5 ࢫ࣌ࢡࢺࣝࡢ

ᗘኚ໬࠿ࡽࠊ)H,, 㧗ࢫࣆࣥS  ࠿ࡽ )H,, పࢫࣆࣥS  ࡬ࡢࢫࣆࣥࢡࣟࢫ࣮࢜ࣂ࣮⌧㇟ࡢⓎ⌧ࡀ♧၀ࡉࢀࡓࠋࡲࡓࠊ&R ࡢ⨨᥮㔞ࡀቑຍࡍࡿ࡟ࡘࢀ࡚ࠊ㌿⛣ࡀࡿ࡜࡜ࡶ࡟㌿⛣ࡀ⦆ࡸ࠿࡟࡞ࡿഴྥࡀほ

ᗘࡀୗ

,,

ࡉࢀࡓࠋ㌿⛣ ᗘࡢపୗࡣ &R ࡢ࢖༙࢜ࣥᚄࡀ )H 㧗ࢫࣆࣥS  ࡜ )H,, పࢫࣆࣥ S  ࡢᖹᆒ࡟ẚ࡭࡚኱ࡁ࠸ࡓࡵ࡟㧗ࢫࣆࣥ≧ែࡀࡼࡾᏳᐃ໬ࡋࡓࡇ࡜ࠊ㌿⛣ࡀ⦆ࡸ࠿࡟࡞ࡗࡓࡢࡣࠊ)H ࢧ࢖ࢺࡀ &R ࢧ࢖ࢺ࡟⨨᥮ࡉࢀࡿ࡟ࡘࢀ࡚ )H ࢧ࢖ࢺ㛫ࡢᖹᆒ㊥㞳ࡀ኱ࡁࡃ࡞ࡾ༠
ྠຠᯝࡀῶᑡࡋࡓࡇ࡜࡟ࡼࡿ࡜⪃࠼ࡽࢀࡿࠋࡲࡓࠊ&R ࢆ⨨᥮ࡋࡓ㘒య࡛ࡣࠊ☢Ẽ┦㌿⛣ࡀほ ࡢࢧࣥࣉࣝࡣ☢Ẽ┦㌿⛣

ࡉࢀࠊx ᗘ . ࠾ࡼࡧಖ☢ຊ 2H ࢆ♧ࡍࡇ࡜ࡀุࡗࡓࠋ

>@ 62KNRVKL+7RNRURAccounts Chem. Res.  >@62KNRVKL.,PRWR<7VXQREXFKL6
7DNDQR+7RNRURNature Photonics   >@.,PRWR67DNDQR62KNRVKLInorganics  

44

3-
୍㍈ᅽୗ࡟࠾ࡅࡿ θ-(ET)2I3 ࡢ㟁Ẽఏᑟ≉ᛶ
Electrical transport properties of θ-(ET)2I3 under uniaxial
strainᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷ㮵㔝⏣◊✲ᐊ ᮾி⌮⛉኱⌮ᕤᏛ㒊≀⌮Ꮫ⛉ ᮧ℩⚽᫂ ➉ཎ㝠௓ ᐑᕝ࿴ஓ ⏣ᮧ㞞ྐ 㮵㔝⏣୍ྖ ◪Ꮚ࡜ࡣ┦஫స⏝ࡍࡿ⢏Ꮚࡀ⤖ᬗࡢࡼ࠺࡞࿘ᮇᛶࢆᣢࡓࡎ࡟ࠊὶືᛶࡀᾘኻࡋࡓࡼ࠺࡟
ࡳ࠼ࡿ≧ែ࡛࠶ࡿࠋࡑࡢ㟁Ꮚ∧࡜ࡶゝ࠼ࡿ㟁Ꮚࢢࣛࢫࡀ᭷ᶵఏᑟయ θ-(ET)2X ࡟࠾࠸࡚㏆ᖺ
Ⓨぢࡉࢀࡓ[1,2]ࠋ㟁Ꮚ┦㛵ࡀᙉ࠸࡜ࡁࠊ㟁Ꮚᐦᗘࡀᅛ᭷ࡢ࿘ᮇࢆ᭷ࡋࡓ⃰ῐࢆࡘࡃࡾ㛗㊥㞳⛛ᗎ໬ࡍࡿࡇ࡜ࡀ࠶ࡿ 㟁Ⲵ⛛ᗎ, ⤯⦕య ࠋ୍᪉࡛ࠊ⮬⏤࡟㟁Ꮚࡀ≀㉁୰ࢆືࡁᅇࡿ㔠ᒓࡣ㟁Ꮚࡢᾮయ≧ែ࡜ࡶぢ࡞ࡍࡇ࡜ࡀ࡛ࡁࡿࠋ㟁Ꮚࢢࣛࢫࡣࠊ㟁Ⲵ⛛ᗎࡀᮇᚅࡉࢀࡿࡼ࠺࡞≧ἣ࡟࠶ࡾ࡞ࡀࡽ㛗㊥㞳⛛ᗎࢆ♧ࡉࡎࠊᗘࡢపୗ࡜࡜ࡶ࡟㟁Ꮚࡀ㛵୚ࡋࡓᐃ㔞ࡢ≉ᚩⓗ࡞᫬㛫ࡀ኱ࡁࡃ࡞ࡿ࡜࠸ࡗࡓྂ඾ⓗ࡞◪Ꮚ࡜ྠᵝࡢᛶ㉁ࢆ♧ࡍࠋࡇࡢࡼ࠺࡞㟁Ꮚࡢࢢࣛࢫ
໬ࡢ⫼ᬒ࡟ࡣ θ-(ET)2X ࡢ⤖ᬗ᱁ᏊࡢᗄఱᏛⓗᛶ㉁ࡀ㛵ಀࡋ࡚࠸ࡿࡢ࡛ࡣ࡞࠸࠿࡜⪃࠼ࡽࢀࡿࠋθ-(ET)2X ࡣ ET ࡀ஧ḟඖⓗ࡞ఏᑟᒙࢆࡘࡃࡾࠊET ศᏊࡢ㓄ิ θ-ᆺ࡜࿧ࡤࢀࡿ ࡣ␗᪉ⓗ࡞୕ゅ᱁Ꮚ࡜ࡳ࡞ࡏࡿࠋࡲࡓࠊET ࡣ 2 ࢧ࢖ࢺ࠶ࡓࡾ 1 ࡘࡢ⢏Ꮚࢆᣢࡘࠋࡇࡢ᱁Ꮚ࡛㟁Ⲵ⛛ᗎ≧ែࢆసࢁ࠺࡜ࡍࡿ࡜୕ゅ᱁Ꮚ࡟㉳ᅉࡋ࡚⃰ῐࡢ㓄ิࡀ୍ព࡟ᐃࡲࡽࡎከᩘࡢ㓄⨨ࡀᏑᅾࡍࡿࠋࡇࡢࡼ࠺࡞᱁Ꮚࡢᛶ㉁ࡣᗄఱᏛⓗࣇࣛࢫࢺ࣮ࣞࢩࣙࣥ࡜ࡋ࡚▱ࡽࢀ࡚࠸ࡿࠋ
ᮏ◊✲࡛ࡣ㟁Ꮚࢢࣛࢫࡢ≀⌮ࢆゎ᫂ࡍࡿࡓࡵࠊࣇࣛࢫࢺ࣮ࣞࢩࣙࣥࡢ኱ࡁࡉ࡟ࡼࡾ㟁Ꮚ≧ែࡀ࡝࠺ኚ໬ࡍࡿ࠿ࢆㄪ࡭ࡓࠋᐇ㦂࡟ࡣ᪤Ꮡࡢ θ ⣔ࡢ≀㉁ࡢ୰࡛≉࡟ṇ୕ゅ᱁Ꮚᛶࡀ㧗ࡃࠊࣇࣛࢫࢺ࣮ࣞࢩࣙࣥࡢ኱ࡁ࠸ θ-(ET)2I3 ࢆ⏝࠸ࡓࠋࣇࣛࢫࢺ࣮ࣞࢩࣙࣥࢆኚ໬ࡉࡏࡿࡓࡵ୍
㍈ᅽ࡟ࡼࡾ୕ゅ᱁Ꮚࢆṍࡲࡏࠊࡑࡢᅽຊୗ࡛㟁Ẽ᢬ᢠࢆᐃࡋ㟁Ꮚ≧ែࢆㄪ࡭ࡓࠋࡑࡢ⤖ᯝࠊᅽຊ࡜࡜ࡶ࡟㔠ᒓⓗ࡞ᣲື࠿ࡽప ࡛⤯⦕య࡬࡜㟁Ꮚ≧ែࡀኚ໬ࡍࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋࡇ
ࡢᅽຊୗ࡛ࡣ㟁Ꮚࢢࣛࢫⓗ࡞᣺ࡿ⯙࠸ࢆぢࡿࡇ࡜ࡣ࡛ࡁ࡞࠿ࡗࡓࠋࡇࡢࡇ࡜ࡣ୕ゅ᱁Ꮚ⣔ࡢ㟁Ꮚ≧ែࢆᗄఱᏛⓗࣇࣛࢫࢺ࣮ࣞࢩࣙࣥࡢࡳ
࡛⪃࠼ࡿࡇ࡜ࡣ࡛ࡁࡎࠊθ-(ET)2I3 ࡢ㏆ഐ࡟࠶ࡿ౛࠼ࡤศᏊ㓄ิࡢᑐ⛠ᛶࡀ␗࡞ࡿ α ┦ࡲ࡛ྵࡴࡼ࠺࡞ࠊࡼࡾᗈ࠸ᯟ⤌ࡳ࡛⪃࠼ࡿᚲせࡀ࠶ࡿࠋᅗ㸯㸬୍㍈ᅽୗࡢ θ-(ET)2I3 ࡢ㟁Ẽ᢬ᢠᙜ᪥ࡣࠊࡇࡢ⤖ᯝࡢヲ⣽ࢆ㆟ㄽࡍࡿࠋ[1] F.Kagawa, T.Sato, K.Miyagawa, K.Kanoda, et al, Nat. Phys. 9, 2642 (2013)[2] T.Sato, F.Kagawa, K.Miyagawa, K.Kanoda, et al, Phys. Rev. B 89, 121102(R) (2014)

45

3-
༢ཎᏊᒙ࣒࣊ࣜ࢘ 3ࡢ᪂ወࢫࣆࣥᾮయ≧ែࡢゎ᫂࡟ྥࡅࡓ
NMRࢭࣝࡢタィ࣭〇సDesign and construction of NMR cell for investigation ofnovel spin liquid state in monolayer helium-3
ప ࢭࣥࢱ࣮$⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ %
㕥ᮌᑦᑗ $ᑠᕝ຾அ %୰ᮧ㱟ྖ %㙊⏣㞞༤ %ᯇ஭᭸⿱ %ᮧᕝᬛ $⚟ᒣᐶ $%ࢢࣛࣇ࢓࢖ࢺ࡟྾╔ࡋࡓ༢ཎᏊᒙ3Heࡣ୙⣧≀࡞࡝ࡢᙳ㡪ࢆཷࡅ࡞࠸⌮᝿ⓗ࡞2ḟඖࣇ࢙࣑ࣝ⣔ࢆᙧ
ᡂࡍࡿࠋ3Heࡣ᰾ࢫࣆࣥS = 1/2ࢆᣢࡗ࡚࠾ࡾࠊཎᏊࡢከయ஺᥮ࢆ཯ᫎࡋࡓከᙬ࡞☢ᛶࢆ♧ࡍࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋ᭱㏆ࠊ2ᒙHD⭷࡛ࣉࣞࢥ࣮ࢺࡋࡓࢢࣛࣇ࢓࢖ࢺୖ3He༢ཎᏊᒙ⭷ (௨ୗࠊࡇࡢ⣔ࢆ3

He/HD/HD/gr࡜グࡍ) ࡟࠾࠸࡚ヲ⣽࡞⇕ᐜ㔞࡛C ҃ܶ ଶȀଷ ࡜࠸࠺≉␗࡞ᐃࡀ⾜ࢃࢀࠊ㠃ᐦᗘߩ ൌͶǤ͹Ͷ ିଶ ࡟࠾࠸࡚T Ә 7 mKᗘ౫Ꮡᛶࢆᣢࡘ᪂ࡓ࡞2ḟඖ㔞Ꮚ┦ (C3┦) ࡀⓎぢࡉࢀࡓ[1]ࠋࡲࡓࠊC3┦㏆ഐࡢ㠃ᐦᗘ㡿ᇦ࡛ࡢᖏ☢⋡[2]ࡣࠊߩൌͶǤͺǡͷǤͲǡͷǤʹ ିଶ ࡢ㠃ᐦᗘ࡟࠾࠸࡚T Ә 10 mK࡛χ ҃ܶ ିଵȀଷ࡜࠸࠺≉␗࡞

ᗘ౫Ꮡᛶࢆᣢࡘࡼ࠺࡟ぢ࠼ࡿࠋࡇࢀࡽࡢࡇ࡜࠿ࡽࠊC3┦ࡣE ҃ ݇ ଷ ࡢศᩓ㛵ಀࢆᣢࡘ᪂

ࡋ࠸ࢱ࢖ࣉࡢ㔞Ꮚࢫࣆࣥᾮయ (⤯ᑐ㞽ᗘࡲ࡛ࢫࣆࣥࡀ⛛ᗎࡋ࡞࠸≧ែ) ࡛࠶ࡿྍ⬟ᛶࡀ࠶ࡿࠋࡋ࠿ࡋࠊ
⇕ᐜ㔞ᐃ࡟ᑐࡋ࡚ࠊᖏ☢⋡ࡢߩ౫Ꮡᛶࡣヲ⣽࡟ࡣᐃࡉࢀ࡚࠸࡞࠸ (ᅗ2)ࠋ

ࡑࡇ࡛ᮏ◊✲࡛ࡣࠊC3┦ࢆྵࡴ3He/HD/HD/grࡢᵝࠎ࡞㔞Ꮚ┦ࡢ☢Ẽⓗᛶ㉁ࢆㄪ࡭ࡿࡓࡵࠊ0.1 mKࡢ㉸పᐃ࡛ࡁࡿ᪂タィࡢNMRࢭࣝࢆ〇సࡋ࡚࠸ࡿࠋタィ࡛ࡣࠊ஺ὶ☢

ࡲ࡛᰾ᖏ☢⋡ࡸᶓ⦆࿴᫬㛫ࢆሙ࡟ࡼࡿ㟁ὶⓎ⇕ࢆᢚ࠼ࡿࡓࡵࠊࢢࣛࣇ࢓࢖ࢺ྾╔ᇶᯈ࡜෭෾ᶵࡢ㛫ࡢ㖟ࡢ⇕ࣜࣥࢡࡢᙧ≧ࢆ᭱㐺໬ࡋࡓࡾࠊ✚⟬ᅇᩘࢆቑࡸࡋ࡚

ᐃไᗘࢆୖࡆ

ࡿࡓࡵࠊࡼࡾⷧ࠸ࢢࣛࣇ࢓࢖ࢺᇶᯈࢆ
౑ࡗ࡚⇕⦆࿴᫬㛫ࢆ▷ࡃࡍࡿ࡞࡝ࡢᕤ
ኵࢆࡋࡓࠋⓎ⾲࡛ࡣࠊࡇࡢNMRࢭࣝࡢタィ࡜〇సࡢヲ⣽ࢆሗ࿌ࡍࡿࠋ

ᅗ1

3

He/HD/HD/gr ࡢᴫ␎ᅗ

ᅗ 3

ᅗ2

3

NMR ࢭࣝᴫ␎ᅗ

He/HD/HD/gr ࡢప ┦ᅗ[3][1] M. Kamada et al., to be published.
[2] R. Masutomi et al., Phys. Rev. Lett. 92, 025301(2004), H. Ikegami et al., Phys. Rev. Lett. 85, 5146(2000).
[3] ᑠᕝ຾அ, ᮾி኱Ꮫ ಟኈㄽᩥ(2017).

46

3-
ศᏊ⥺࢚ࣆࢱ࢟ࢩ࣮ᢏ⾡ࢆ⏝࠸࡚స〇ࡋࡓ
NbSe2 ࢚ࣆࢱ࢟ࢩ࢓ࣝⷧ⭷࡟࠾ࡅࡿ㉸ఏᑟSuperconductivity in NbSe2 epitaxial thin films
grown by molecular-beam epitaxy.
ᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉ $⌮◊ &(06%ᯇᒸ⚽ᶞ $୰㔝໷つ $ ⋤㉺ $᯽ཎᝆኴ $ྜྷ⏣カ $▼ᆏ㤶Ꮚ $%ᕝ㷂㞞ྖ $%ᒾబ⩏ᏹ $% 㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻ㸦Transition Metal Dichalcogenides, TMDs㸧ࡣ㑄⛣㔠ᒓ࡜࢝ࣝࢥࢤࣥࡢ⤌ࡳྜࢃࡏ࠿ࡽ࡞ࡿከᵝ࡞ᒙ≧≀㉁⩌࡛࠶ࡿࠋ㏆ᖺࠊ㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻࡀ༢ᒙᴟ㝈࡟࠾࠸࡚Ⓨ⌧ࡍࡿᵝࠎ࡞᪂ወ≀ᛶࡀὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋලయ౛ࢆᣲࡆࡿ࡜ࠊMoS2 ࡸ WSe2 ࡞࡝ࡢ༙ᑟయ TMD ࡟࠾ࡅࡿ✵㛫཯㌿ᑐ⛠ᛶࡢ◚ࢀࡸᙉ࠸ࢫࣆࣥ㌶㐨┦஫స⏝࡟㉳ᅉࡍࡿࣂ࣮ࣞ೫ᴟࡋࡓⓎග≉ᛶ࣭㍺㏦≉ᛶ
ࡸࠊNbSe2 ࡟࠾ࡅࡿࢫࣆࣥ㌶㐨┦஫స⏝࡜㐃⤖ࡋࡓ Ising ㉸ఏᑟࠊTaS2 ࡟࠾ࡅࡿ㉸ఏᑟ㌿⛣ ᗘࡢୖ᪼ࠊ
WTe2 ࡟࠾ࡅࡿࢺ࣏ࣟࢪ࢝ࣝ┦㌿⛣࡞࡝ᯛᣲ࡟ᬤࡀ࡞࠸ࠋࡇࢀࡽࡢ஧ḟඖ≀ᛶࢆヲ⣽࡟᥈⣴ࡋࠊࡉࡽ࡟
⏺㠃タィࢆ฼⏝ࡋࡓ᪂ወ≀ᛶࡢ㛤ᣅ࡬࡜ᗈࡆ࡚࠸ࡃࡓࡵ࡟ࡣࠊⷧ⭷ࠊ≉࡟༢ᒙᴟ㝈ࡢ㑄⛣㔠ᒓࢲ࢖࢝ࣝ
ࢥࢤࢼ࢖ࢻヨᩱࢆᏳᐃⓗ࡟ᚓࡿࡇ࡜ࡀ㔜せ࡜࡞ࡿࠋࡇࢀࡲ࡛ࠊ༢ᒙ TMD ࡢ୺࡞〇㐀᪉ἲࡣࠊᶵᲔⓗ๤㞳࠾ࡼࡧ໬ᏛẼ┦ᡂ㛗࡛࠶ࡗࡓࡀࠊࡇࢀࡽࡢᡭἲ࡟
ࡣ࡬ࢸࣟ⏺㠃స〇ࡢᏳᐃᛶࡸヨᩱࢧ࢖ࢬ࡜࠸ࡗࡓほⅬ࠿ࡽḞⅬࡀᏑᅾࡍࡿࠋࡑࡢࡼ࠺࡞ḞⅬࢆඞ᭹ࡍࡿ
ᡭἲ࡜ࡋ࡚ᮇᚅࡉࢀ࡚࠸ࡿࡢࡀศᏊ⥺࢚ࣆࢱ࢟ࢩ࣮
ἲ(MBE)࡟ࡼࡿⷧ⭷స〇࡛࠶ࡿࠋ≉࡟ࠊ௚ࢢ࣮ࣝࣉࡀศග ᐃࢆ┠ⓗ࡜ࡋ࡚ࢢࣛࣇ࢙ࣥࢆጞࡵ࡜ࡍࡿᑟ㟁ᛶࡢ㧗࠸ᇶᯈୖ࡟࠾ࡅࡿ㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖
ࢻࡢⷧ⭷ᡂ㛗ࢆ⾜࠺୍᪉࡛ࠊᡃࠎࡢࢢ࣮ࣝࣉࡣ㟁Ⲵ㍺㏦ ᐃࡢࡓࡵ⤯⦕యᇶᯈୖ࡟࠾ࡅࡿ㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻⷧ⭷ࡢᡂ㛗ἲࢆᶍ⣴ࡋࡓ㸦ᐇ㦂ᴫᅗ㸸ᅗ㸯㸧ࠋࡑࡢ⤖ᯝࠊMBE ࢆ⏝࠸ࡓ㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻⷧ⭷ࡢ layer-by-layer ᡂ㛗ࢆ⤯⦕ࢧࣇᅗ㸯㸬ᮏ◊✲࡟࠾ࡅࡿศᏊ⥺࢚ࣆࢱ࢟ࢩ࣮ἲࡢ
ᴫᅗ࢓࢖࢔ᇶᯈ࡟࠾࠸࡚☜❧ࡍࡿ࡜࡜ࡶ࡟ࠊWSe2 ⷧ⭷࡟࠾ࡅࡿ୧ᴟᛶࢺࣛࣥࢪࢫࢱᛂ⟅ࢆ㐩ᡂࡋࡓࠋ[1] ᮏ࣏ࢫࢱ࣮Ⓨ⾲࡛ࡣࠊ⤯⦕ࢧࣇ࢓࢖࢔ᇶᯈୖ࡟࠾ࡅࡿ࢚ࣆࢱ࢟ࢩ࢓ࣝ NbSe2 ⷧ⭷ࡢᡂ㛗ἲ࡟ゐࢀࡘ
ࡘࠊNbSe2 ⷧ⭷࡟࠾࠸࡚ᐇ⌧ࡋࡓ஧ḟඖ㉸ఏᑟ≀ᛶ࡟ࡘ࠸࡚Ⓨ⾲ࡍࡿࠋ

[1] M. Nakano et al., Nano Lett. 17, 5595 (2017).

47

3
ࢩ࢔ࣀᯫᶫᆺ㔠ᒓ㞟✚య࡟࠾ࡅࡿ㠀⥺ᙧ☢ẼගᏛຠᯝࡢほObservation of magnetization-induced second harmonic generation ina noncentrosymmetric cyanido-bridged metal assembly⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭኱㉺◊✲ᐊᑠᓟ ㄔஓࠊ஭ඖ ೺ኴࠊᐑᮏ 㟹ேࠊ୰ᯘ⪔஧ࠊ኱㉺ ៅ୍ ୰ᚰᑐ⛠ᛶࢆᣢࡓ࡞࠸≀㉁ࡣࡑࡢ㟁Ẽศᴟ࡟ࡼࡾࠊᅽ㟁ᛶࡸ஧ḟࡢ㠀⥺ᙧගᏛຠᯝࢆ♧ࡍࠋࡉࡽ࡟ࠊ
୰ᚰᑐ⛠ᛶࢆᣢࡓ࡞࠸ᙉ☢ᛶయࡣ☢ᛶ࡜㟁Ẽศᴟࡢ┦㛵࡟ࡼࡾࠊ☢໬ㄏ㉳➨஧㧗ㄪἼⓎ⏕㸦MSHG㸧࡞࡝ࡢ≉␗࡞≀ᛶࢆ♧ࡍࠋᙜ◊✲ᐊ࡛ࡣ࣊࢟ࢧࢩ࢔ࣀ㔠ᒓ㓟࢖࢜ࣥࡸ࢜ࢡࢱࢩ࢔ࣀ㔠ᒓ㓟࢖࢜ࣥࢆᵓ⠏⣲Ꮚ࡜ࡋ࡚⏝࠸ࡓ㞟✚ᆺ㘒య࡟࠾࠸࡚ MSHG ࡢほ ࡟ᡂຌࡋ࡚ࡁࡓ[1,2]ࠋᮏ◊✲࡛ࡣࠊ࣌ࣥࢱࢩ࢔ࣀࢽࢺࣟࢩ
ࣝࣔࣜࣈࢹࣥ㓟࢖࢜ࣥࢆᵓ⠏⣲Ꮚ࡜ࡋ࡚⏝࠸ࡓᙉ☢ᛶయ࡟࠾࠸࡚ MSHG ࡢほ࡟ᡂຌࡋࡓࡢ࡛ሗ࿌ࡍࡿࠋ

࢔ࣝࢦࣥ㞺ᅖẼୗ࡛ Cs3[Mo(CN)5(NO)]࡜ MnCl2ࠊCsCl ࢆỈ୰࡛ΰྜࡍࡿࡇ࡜࡟ࡼࡗ࡚┠ⓗࡢ໬ྜ≀Cs1.26Mn0.87[Mo(CN)5(NO)]·0.6H2O㸦CsMnMo㸧ࢆᚓࡓࠋRietveld ゎᯒࡢ⤖ᯝࠊCsMnMo ࡢ⤖ᬗᵓ㐀ࡣ୰ᚰᑐ⛠ᛶࢆᣢࡓ࡞࠸✵㛫⩌ F 43m ࡟ᒓࡋ࡚࠸ࡿࡇ࡜ࡀ♧၀ࡉࢀࡓ㸦ᅗMn

1㸧ࠋ࣐ࣥ࢞ࣥ࡜ࣔࣜࣈࢹࣥࡀࢩ࢔ࣀᇶ࡟ᯫᶫࡉࢀࡿࡇ࡜࡟ࡼࡗ࡚ 3ḟඖࡢࢿࢵࢺ࣮࣡ࢡᵓ㐀ࢆᙧᡂࡋ࡚࠸ࡓࠋࢭࢩ࣒࢘࢖࢜ࣥࡀࡑࡢ᱁
Ꮚ㛫ࡢ 2 ✀㢮ࡢࢧ࢖ࢺ࡟␗࡞ࡿ༨᭷⋡࡛Ꮡᅾࡍࡿࡇ࡜ࡀ୰ᚰᑐ⛠ᛶ

Cs1

O N
or
N C

Mo

ࢆᣢࡓ࡞࠸⤖ᬗᵓ㐀ࡢཎᅉ࡛࠶ࡗࡓࠋእ㒊☢ሙ 10 Oe ࡟࠾ࡅࡿ☢ሙ

Cs2୰෭༷☢໬᭤⥺ࡣ 65 K ௨ୗ࡛኱ࡁࡃ❧ࡕୖࡀࡗ࡚࠸ࡿࡇ࡜࠿ࡽ
CsMnMo ࡢ࣮࢟ࣗࣜ ᗘࡣ 65 K ࡛࠶ࡿࡇ࡜ࡀ᫂ࡽ࠿࡟࡞ࡗࡓࠋ
ࡲࡓࠊa

2 K ࡟࠾ࡅࡿ㣬࿴☢໬ࡢ್ࡣ 3.4 PB ࡛ Mn (S = 5/2)࡜ Mo (S = 1/2)ࡢࢫ

bࣆࣥࡀ཯ᖹ⾜࡟ᩚิࡋࡓ᫬ࡢ್࡟㏆࠿ࡗࡓࡇ࡜࠿ࡽ CsMnMo ࡣࣇO࢙ࣜ☢ᛶయ࡛࠶ࡿࡇ࡜ࡀ♧၀ࡉࢀࡓࠋᐊ ࡛ CsMnMo ࡟ࢼࣀ⛊ࣃࣝcᅗ 1㸬CsMnMo ࡢ⤖ᬗᵓ㐀㸬

ࡽ 100 K ࡢ㛫ࡣ࡯ࡰྠࡌ್࡛࠶ࡾࠊࡉࡽ࡟ ᗘࢆୗࡆࡿ࡜ᙉᗘࡀቑ
ຍࡋࡓࠋࡑࡢᙧ≧ࡣ 5000 Oe ࡟࠾ࡅࡿ☢໬⋡ࡢ ᗘ౫Ꮡᛶ࡜ఝࡓᣲ
ືࢆ♧ࡋࡓࠋᐊ࡛ほࡉࢀࡿ➨஧㧗ㄪἼࡣ⤖ᬗᵓ㐀ࡢ཯㌿ᑐ⛠ᛶࡢ◚ࢀ࡟㉳ᅉࡍࡿࠋ୍᪉ࠊప

࡛➨஧㧗ㄪἼᙉᗘࡀቑຍࡍࡿࡢࡣ☢

Ẽ⛛ᗎ࡟ࡼࡾ⤖ᬗᵓ㐀⏤᮶ࡢ SHG ࡟ຍ࠼࡚ࠊ☢Ẽศᴟ⏤᮶ࡢ MSHGࡀほ ࡉࢀࡓࡇ࡜࡟ࡼࡿ࡜⪃࠼ࡽࢀࡿࠋ

-1

1200

3

஧㧗ㄪἼᙉᗘࡢ ᗘኚ໬ࢆᅗ 2 ࡟♧ࡍࠋ➨஧㧗ㄪἼᙉᗘࡣ 300 K ࠿

Magnetization (Oe cm mol )ࢫ࣮ࣞࢨ࣮ࢆ↷ᑕࡋࡓ࡜ࡇࢁࠊ➨஧㧗ㄪἼࡢฟᑕࡀ☜ㄆࡉࢀࡓࠋ➨

900
600
300

0

0

20

40
60
Temperature (K)

80

100

ᅗ 2㸬10 Oe ࡟࠾ࡅࡿ☢ሙ୰෭༷☢໬᭤⥺㸬[1] T. Nuida, T. Matsuda, H. Tokoro, S. Sakurai, K. Hashimoto and S. Ohkoshi, J. Am. Chem. Soc., 2005, 127,
11604. [2] S. Ohkoshi, S. Takano, K. Imoto, M. Yoshikiyo, A. Namai, H. Tokoro, Nature Photonics, 2014, 8, 65.

48

3-
ᙉ☢ᛶ Co 㓟໬≀ⷧ⭷࡟࠾ࡅࡿ☢Ẽ㍺㏦≉ᛶ࡜㟁Ⲵ⛣ືຠᯝ
Magneto-transport properties and charge transfer effect inferromagnetic Co oxide thin filmsᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉࣭≀⌮ᕤᏛᑓᨷ࣭ᕝ㷂◊✲ᐊ኱ෆ♸㈗ᯇ㔝୔ኵᑠሯ⿱௓ᡴ⏣ṇ㍤ᕝ㷂㞞ྖ✵㛫཯㌿ᑐ⛠ᛶࡢ◚ࢀࡓ☢ᛶయ࡛ࡣࠊ㞄ࡾྜ࠺㟁Ꮚࢫࣆࣥࡢ᪉ྥࢆࡡࡌࡿ┦஫స⏝㸦ࢪࣕࣟࢩࣥࢫ࢟
࣮Ᏺ㇂┦஫స⏝㸧ࡀ⏕ࡌࠊ☢Ẽࢫ࣑࢟ࣝ࢜ࣥ࡞࡝ࡢࢫࣆࣥࢺࣟࢽࢡࢫᛂ⏝ୖ⯆࿡῝࠸ࢫࣆࣥᵓ㐀ࡀㄏ㉳ࡉࢀࡿࠋࡇࡢࡼ࠺࡞ࢫࣆࣥᵓ㐀ࡣᙉ☢ᛶయ࡜㠀☢ᛶయ࠿ࡽ࡞ࡿேᕤⓗ࡞࣊ࢸࣟᵓ㐀ⷧ⭷࡟࠾࠸࡚ࡶᐇ⌧ࡉࢀࡿࡀࠊࡑࡢண ࡣ㞴ࡋࡃࠊ࣊ࢸࣟᵓ㐀ࢆᵓᡂࡍࡿᮦᩱ㑅ᢥ࡜ࢪࣕࣟࢩࣥࢫ࣮࢟Ᏺ㇂┦஫స⏝࡜ࡢ㛵ಀࡣ㆟ㄽࡀ⥆࠸࡚࠸ࡿ[1]ࠋ㔠ᒓᮦᩱࢆ⏝࠸ࡓ✚ᒙ⭷࡛ከࡃࡢ◊✲ࡀ⾜ࢃࢀ࡚ࡁࡓࡀࠊ㏆ᖺࠊ༢⤖ᬗᇶᯈୖ࡟࢚ࣆࢱ࢟ࢩࣕࣝᡂ㛗ࡉࡏࡓ㓟໬≀࣊ࢸࣟᵓ㐀࡟࠾࠸࡚ࡶࠊ㠀☢ᛶయ࡟ᙉ࠸ࢫࣆࣥ㌶㐨┦஫స⏝ࢆ᭷ࡍࡿ Ir 㓟໬≀ࢆ⏝࠸ࡿࡇ࡜࡛ࢫ࣑࢟ࣝ࢜ࣥᙧᡂࡀ♧ࡉࢀࡓ[2]ࠋᙉ☢ᛶయࢆ SrRuO3 ࡜ࡋࡓࡇࡢ࣊ࢸࣟᵓ㐀࡛ࡣࠊࢫࣆࣥᵓ㐀ࡢ㟁ሙไᚚࢆ♧၀ࡍࡿ⤖ᯝࡶᚓࡽࢀ࡚࠾ࡾ[3]ࠊ࣊ࢸࣟ⏺㠃࡟⏤᮶ࡍࡿࢫࣆࣥ⌧㇟ࡢ᪂ࡓ࡞◊✲ᑐ㇟࡜ࡋ࡚ὀ┠ࡉࢀ࡚࠸ࡿࠋ
ᮏ◊✲࡛ࡣᙉ☢ᛶయ࡜ࡋ࡚࣌ࣟࣈࢫ࢝࢖ࢺᆺ Co 㓟໬≀࡟ὀ┠ࡋࠊࡑࡢ☢Ẽ㍺㏦≉ᛶࢆ᫂ࡽ࠿࡟ࡋࠊSrIrO3 ࡜ࡢ࣊ࢸࣟᵓ㐀ࢆస〇ࡍࡿࡇ࡜࡛ࠊ⏺㠃࡟࠾ࡅࡿࢫࣆࣥᵓ㐀ᙧᡂ࡜㟁Ⲵ⛣ືࡢ㛵ಀࢆㄪ࡭ࡓࠋ
ᮏ⣔ࡣ⏺㠃࡛ẚ㍑ⓗ኱ࡁ࡞㟁Ⲵ⛣ືࢆ᭷ࡍࡿ࡜ᮇᚅࡉࢀࠊ㟁Ⲵ⛣ື࡜ࢪࣕࣟࢩࣥࢫ࣮࢟Ᏺ㇂┦஫స⏝࡜ࡢ㛵ಀࢆㄪ࡭ࡿࡢ࡟㐺ࡋ࡚࠸ࡿࠋⷧ⭷ࡣࣃࣝࢫ࣮ࣞࢨ࣮ሁ✚ἲࢆ⏝࠸࡚㓟໬≀༢⤖ᬗᇶᯈୖ࡟స〇ࡋࠊᐊ ࠿ࡽప 㸦2 K㸧ࡲ࡛☢Ẽ㍺㏦≉ᛶ࡜☢໬ࡢ ᐃ࡟ࡼࡾࢫࣆࣥᵓ㐀ࡢ㟁Ẽⓗ࡞᳨ฟࢆヨࡳࡓࠋྛᗘ࡟࠾࠸࡚࣮࣍ࣝ᢬ᢠ⋡ࡢ☢ሙ౫Ꮡᛶࢆぢࡿ࡜ࠊᙉ☢ᛶయ༢⭷࡛ࡣࠊFig.1 ࡟♧ࡍࡼ࠺࡟ᙉ☢ᛶ࡟⏤᮶ࡍࡿ␗ᖖ࣮࣍ࣝຠᯝࡀ➢ྕ཯㌿ࢆకࡗ࡚ほ ࡉࢀࡓࠋࡇࢀࡣ SrRuO3 ࡜ྠᵝ࡟ࠊἼᩘ✵㛫ࡢࣂࣥࢻࢺ࣏ࣟࢪ࣮࡜㛵㐃ࡋࡓෆᅉᛶ␗ᖖ࣮࣍ࣝࢆ♧၀ࡍࡿࠋ୍
᪉ࠊ࣊ࢸࣟ⏺㠃ᙧᡂ࡟ࡼࡿࢫࣆࣥᵓ㐀ᙧᡂࢆ♧ࡍຠᯝࡣほ ࡉࢀ࡚࠾ࡽࡎࠊ༢య࡜ࡋ࡚ࡍ࡛࡟ᙉ࠸ࢫࣆࣥ㌶㐨┦஫స⏝ࢆ᭷ࡍࡿ
SrIrO3 ࡢሙྜࠊ㟁Ⲵ⛣ືࡀᑡ࡞࠸᪉ࡀ⏺㠃⏤᮶ࡢࢫࣆࣥᵓ㐀ᙧᡂ࡟㐺ࡍࡿࡇ࡜ࡀ♧၀ࡉࢀࡓࠋ
[1] F. Hellman et al. Rev. Mod. Phys. 89, 025006 (2017).
[2] J. Matsuno et al., Sci. Adv. 2, e1600304 (2016).
[3] Y. Ohuchi et al. Nat. Commun. 9:213 (2018).

49

Fig. 1: Magnetic-fielddependence of Hall resistivity in
SrCoO3 at various temperatures.

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51

3
Transport and magnetic properties of n-type ferromagnetic semiconductor (In,Fe)As
co-doped with Mn ; (In,Fe,Mn)As
Taiki Hayakawa , Le Duc Anh1,2, Kohei Okamoto1, and Masaaki Tanaka1,3
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
2
Institute of Engineering Innovation, The University of Tokyo
3
Center for Spintronics Research Network (CSRN), The University of Tokyo

‫ۑ‬

1

ᮾ኱ᕤ䠈○(M2)᪩ᕝ ዉఀ⣖ 1䠈Le Duc Anh1,2, (M2)ᒸᮏ ᾈᖹ 1, ⏣୰ 㞞᫂ 1,3ᮾி኱ᏛᕤᏛ⣔◊✲⛉ 1 㟁Ẽ⣔ᕤᏛᑓᨷࠊ2⥲ྜ◊✲ᶵᵓࠊ3CSRN

E-mail: hayakawa@cryst.t.u-tokyo.ac.jp
Recently, we have successfully grown the first n-type carrier-induced Ϫ - Ϭ ferromagnetic
semiconductor (In,Fe)As1. It is shown that its magnetic properties can be controlled by strain2,3 , quantum
confinement3,4 , and wavefunction engineering3,4. In this study, in order to control both the carrier
characteristics and magnetic properties of (In,Fe)As, we grew n-type ferromagnetic semiconductor(In,Fe)As thin films co-doped with Mn, (In,Fe,Mnx)As
We grew, from the top to the bottom, InAs/(In,Fe,Mnx)As (10 nm, 236Υ)/ In0.8Al0.2As (250 nm,550Υ)/GaAs (100nm, 550Υ) thin films by low-temperature molecular beam epitaxy (LT-MBE) on semi-insulating
GaAs (001) substrates. While the Fe concentration is fixed at 6%, the Mn concentration x is varied; x = 0.4,
0.8, 2, 4 and 8%. Fig.1 (a) shows RHEED patterns after the MBE growth of 10 nm-thick (In,Fe0.06,Mnx)As
films, indicating zinc-blende crystals. We measured the transport and magnetic properties by Hall and
MCD measurements. All the (In,Fe0.06,Mnx)As films are found to be n-type. As shown in Fig.1 (b), when x1017 cm-3 and theis increased from 0.4% to 8%, the electron concentration n is decreased from 11018 to 3
Curie temperatureis also decreased from 16 to 0 K (paramagnetic) . These results are reasonablebecause Mn atoms substitute for the In sites and supply holes, which compensate the electron carriers. As
shown in Fig.1 (c), increases from 0 to 16 K as n increases from 31017 to 11018 cm-3,confirming theelectron-induced ferromagnetism of (In,Fe)As. The threshold n value for inducing ferromagnetism in(In,Fe,Mn)As is ~81017 cm-3 (at x = 2%), which is one order of magnitude lower thanthat (61018 cm-3)of the previous report1 for (In,Fe0.05)As without Mn. This is advantageous for modulating the magnetic
properties in a very wide range of electron concentration.
This work is partly supported by Grants-in-Aid for Scientific Research, and Spintronics Research
Network of Japan (Spin-RNJ).
References
P. N. Hai, et al., Appl. Phys. Lett. 101, 182403 (2012); M. Tanaka, S. Ohya and P. N. Hai, Appl. Phys. Rev. 1,
011102 (2014)
 D. Sasaki, et al., Appl. Phys. Lett. 104, 142406 (2014).
 L. D. Anh, et al., Appl. Phys. Lett. 104, 042404 (2014)
 L. D. Anh, et al., Phys. Rev. B 92, 161201 (2015).


(a)


(c)

(b)

Fig.1 (a) RHEED patterns after the MBE growth of 10 nm-thick (In,Fe0.06Mnx)As films. (b) Electron
concetration and Curie temperature vs. Mn concentration. Red square is Curie temperature and deep blue
square is electron concentration. (c) Curie temperature vs. electron concentration.

52

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53

3-
Emission Color Modulation and Slow Magnetic Relaxation in the
Series of Trimetallic Complexes
'HSDUWPHQWRI&KHPLVWU\6FKRRORI6FLHQFH7KH8QLYHUVLW\RI7RN\R)DFXOW\RI&KHPLVWU\-DJLHOORQLDQ8QLYHUVLW\.XQDO.XPDU6]\PRQ&KRUD]\.RML1DNDE\DVKL%DUEDUD6LHNOXFND6KLQLFKL2KNRVKLInorganic complexes, especially with lanthanide, have diverse applications as tunable laser systems, lightemitting devices, amplifiers for optical communication, low-energy scintillators, optical storage materials, devices
for light conversion, chemical sensors, molecular thermometers, photovoltaic light concentrators, and bioimaging
tool [2]. Octacyanides and hexacyanides of d-transition metals (NbIV, CoIII etc.) along with organic ligands were used
to synthesize many multifunctional materials showing novel properties, such as - switching of polarization of light[1]. In pursuit of multifunctional materials, series of cyano-bridged trimetallic complexes {[EuIIIxTbIII1-x(3OHpy)2(H2O)4][CoIII(CN)6]}.H2O (x = 1, 0.8, 0.5, 0.4, 0.3, 0.2, 0.1, 0; compounds A, B, C, D, E, F, G, H ) have beensynthesized [2]. In order to know the structure of complexes, single crystal diffraction analyses were performed which
confirmed that all the compounds are arranged in the Zig-Zag 1-D coordination chains parallel to [101] axis, andcomposedof[CoIII(CN)6]3-

and[EuIII(μ-NC)2(3-OHpy)2(H2O)4]+ in alternate fashion (Figure 1). The
emission colors of these complexes can be tuned by thecomposition ratio of Eu/Tb and excitation wavelengths.
(Figure 1). The luminescence color varies from red to green
via orange and yellow as indicated in the adjacent figure.
Furthermore, the magnetic properties of all thecomplexes was also found to be excellent as it shows
temperature-dependent paramagnetic behavior mainly due
to lanthanide ions. The presence of anisotropic TbIII ions in
the complexes B-H helps them to behave as a single

Figure 1. The representative fragment ofmolecular magnet. The magnetically diluted complex B

cyanide bridged chain of all compounds,(Figure 1) shows slow field-induced slow magnetic

emission color of compounds A-H and therelaxation process with an energy barrier of ΔE/kB of

frequency dependence of out of plane35.8(6) K and τ0 = 1.1(2) X 10-8 s at Hdc = 1500 dc Oe,

component (χM”) of ac magnetic susceptibility

showing single-molecule magnet behavior. It showsfor compound B.

thermal dependent single relaxation process with
one maxima as shown in figure 1.
1) S. Ohkoshi, S. Takano, K. Imoto, M. Yoshikiyo, A. Namai, and H. Tokoro, Nature Photonics 2014, 8, 65-71. 2) S. Chorazy, K. Kumar,
K. Nakabyashi, B. Sieklucka and S. Ohkoshi Inorg. Chem.,2017, 56, 5239-5252.

54

3-

Measurements of thermoelectric effects
in the quasi-2D organic conductor κ-(BEDT-TTF).

Ꮏቇ♽⎇ⓥ⑼‛ℂᎿቇኾ᡹㣮㊁↰⎇ⓥቶ⧯᧻ᶈᄢ‫⮮ޔ‬੗ᱞೣ‫ޔ‬ችᎹ๺਽‫⼱ޔ‬ญᒄਃ‫ޔ‬㣮㊁↰৻ม ᧄ⎇ⓥߩኻ⽎ߢ޽ࠆ‛⾰ κ-(BEDT-TTF).

ߪᡆ 2 ᰴర᦭ᯏ

⿥વዉ૕ߢ޽ࠆ‫᦭ޕ‬ᯏዉ૕ߪࡈࠔࡦ࠺࡞ࡢ࡯࡞ࠬ⚿วߢᒙߊ⚿วߒߡ޿ࠆߩߢ࿶ജߦࠃࠆࡃࡦ࠼᏷೙ᓮ߇น⢻ߣߥߞߡ޿ࠆ‫৻ޕ‬ᣇߢ‫ޔ‬㌃㉄ൻ‛ߦઍ⴫ߐࠇࠆࠃ߁ߥήᯏ‛⾰ߢⴕࠊࠇߡ޿ࠆࡃࡦ࠼ࡈࠖ࡝ࡦࠣ
೙ᓮߪ᦭ᯏዉ૕ߢߪ࿎㔍ߣߥߞߡ޿ࠆ‫ޕ‬κ-(BEDT-TTF).

ߪࠕ࠾ࠝࡦጀߩ᳓㌁߇ਇᢛวߥ๟ᦼߢ㈩೉ߒߡ޿ࠆߚ߼‫᦭ޔ‬ᯏዉ૕ߢߪ
଀ᄖ⊛ߥ 11%ࡎ࡯࡞࠼࡯ࡊ߇ታ⃻ߒߡ޿ࠆ♽ߢ޽ࠅ‫♽ߚࠇߐࡊ࡯࠼ޔ‬ߦ߅޿ߡࡃࡦ࠼᏷೙ᓮߦࠃࠆ‛ᕈߩ⎇ⓥ߇น⢻ߢ޽ࠅ‫ޔ‬ᒝ⋧㑐㔚ሶ♽
ߩℂ⸃ࠍᷓ߼ࠆߎߣ߇ߢ߈ࠆߣᦼᓙߐࠇߡ޿ࠆ‫ޔߚ߹ޕ‬κ-(BEDT-TTF).

ߦ߅ߌࠆࠬࡇࡦ⏛ൻ₸ߪࠬࡇࡦᶧ૕ߢ޽ࠆ

‛⾰ߣห᭽ߩᝄ⥰޿ࠍ␜ߔ৻ᣇ‫⿠ߦࡊ࡯࠼࡞࡯ࡎޔ‬࿃ߔࠆવዉᕈ߽

࿑1. κ-(BEDT-TTF)޽ࠆߎߣ߇⏕⹺ߐࠇߡ޿ࠆ‫ޔࠄ߆ߣߎߩߎޕ‬࿶ജ⋧࿑=?

κ-(BEDT-TTF)

.

ߩ᷷ᐲ㧙

.

ߪࠬࡇࡦᶧ૕ߦ࠼࡯ࡊߒߚ♽ߣ⠨߃ࠄࠇߡ߅ࠅ[1]‫ࡦࡇࠬޔ‬ᶧ૕ߣ⿥વዉߣ޿߁ⷰὐ߆ࠄ߽⥝๧ᷓ޿‛⾰ߣߥߞߡ޿ࠆ‫ޕ‬వⴕ⎇ⓥߦࠃߞߡ‫ޔ‬ᓧࠄࠇߚ᷷ᐲ-࿶ജ⋧࿑߇࿑ 1 ߢ޽ࠆ‫ޕ‬ૐ࿶߆ࠄ㜞࿶ߦ߆ߌߡ㕖ࡈࠚ࡞ࡒᶧ૕߆ࠄࡈࠚ࡞ࡒᶧ૕߳ߩࠢࡠࠬ
ࠝ࡯ࡃ࡯߇⷗ࠄࠇࠆߎߣ‫⿥ޔ‬વዉߩォ⒖᷷ᐲ߇࿶ജߦኻߒߡ࠼࡯ࡓဳ
᭴ㅧࠍߒߡ޿ࠆߎߣ߇․ᓽߣߒߡ᜼ߍࠄࠇࠆ‫⿥ޕ‬વዉ⋧ߦ߅޿ߡߪ‫ޔ‬਄ㇱ⥃⇇⏛႐ߩ᷹ቯ߆ࠄ⷗Ⓧ߽ࠄࠇߚࠦࡅ࡯࡟ࡦࠬ㐳߇ૐ࿶஥ߣ㜞࿶஥ߢ⇣ߥߞߡ߅ࠅ‫⿥ޔ‬વዉߩឬ௝߽㔚ሶ⋧㑐ߦࠃߞߡᄌൻߒߡ޿
ࠆߎߣ߇␜ໂߐࠇߡ޿ࠆ[3,4]‫ޕ‬ ᧄ⎇ⓥߢߪ‫ޔ‬࿶ജශടߦࠃࠅ㔚ሶ⋧㑐ࠍᄌൻߐߖ‫ޔ‬ᾲ㔚ലᨐ(࠯࡯ࡌ࠶ࠢലᨐߣࡀ࡞ࡦࠬ࠻ലᨐ)ࠍ᷹ቯߒ‫ޔ‬Ᏹવዉ⋧ߣ⿥વዉ⋧ߘࠇߙࠇߩᕈ⾰ࠍ⺞ߴߚ‫ޕ‬[1]H. Oike, et al., Nat. Commun. 8, 756 (2017).

࿑2. κ-(BEDT-TTF)[2]H. Oike, Doctoral Thesis (2013).

ߩࠬࡇࡦ⏛ൻ₸ߣᛶ᛫₸=?

[3]H. Oike et al., Phys. Rev. Lett. 114, 067002 (2015).

[4]Y. Suzuki, Master Thesis (2017).

55

.

3-
㉸ὶື࣒࣊ࣜ࢘ 3࡟࠾ࡅࡿ
㔞Ꮚ࢔ࣥࢻ࣮࢚ࣞࣇ཯ᑕゅᗘ౫Ꮡᛶほ ⿦⨨ࡢ㛤Ⓨ
Development of Equipment to Observe Angle Dependence of Quantum
Andreev Reflection in Superfluid Helium Threeప ࢭࣥࢱ࣮ᮧᕝ◊✲ᐊྜྷ⏣ ◊௓ᮧᕝ ᬛ ㉸ὶື࣒࣊ࣜ࢘ 3 ࡣ㸪㌶㐨ゅ㐠ື㔞 L = 1㸪ࢫࣆࣥゅ㐠ື㔞 S = 1 ࡢᑐࢆࡘࡃࡾจ⦰ࡍࡿ p Ἴ୕㔜㡯㉸ὶືయ࡜ࡋ࡚▱ࡽࢀ࡚࠸ࡿ㸬1S ㉸ఏᑟయ࡞࡝࡟ࡣ࡞࠸ከࡃࡢ⮬⏤ᗘࢆᣢࡗ࡚࠸ࡿࡓࡵ㸪A ┦㸪B ┦࡞࡝ᵝࠎ࡞≧ែ┦ࡀᏑᅾࡍࡿ㸬㏆ᖺ㸪ࢺ࣏ࣟࢪ࢝ࣝ㉸ఏᑟయࢆࡣࡌࡵ࡜ࡍࡿ͆ࢺ࣏ࣟࢪ͇࢝ࣝ࡞≀㉁ࡀ≀ᛶ≀⌮ࡢୡ⏺࡛ὀ┠ࢆ㞟ࡵ࡚࠸ࡿࡀ㸪ࡇࡢ㉸ὶື࣒࣊ࣜ࢘ 3 - B ┦ࡶࢺ࣏ࣟࢪ࢝ࣝ㉸ὶືయ࡛࠶ࡾ㸪ࡑࡢ⾲㠃࡛ࡣࢠࣕࢵࣉࡀ㛢ࡌ࡚࠸ࡿ[1]㸬ࡇࡢ≉␗࡞⾲㠃≧ែࢆグ㏙ࡍࡿ‽⢏Ꮚࡣ㸪⢏Ꮚ࡜཯⢏Ꮚࡀ➼౯࡞࣐ࣚࣛࢼ⢏Ꮚ࡛࠶ࡿ࡜⪃࠼ࡽࢀ࡚࠾ࡾ㸪ࡑࡢ‽⢏Ꮚࡢ㠃ෆ᪉ྥࡢἼᩘ࡟ᑐࡍࡿ࢚ࢿࣝࢠ࣮ศᩓࡣ࣐ࣚࣛࢼࢥ
࣮ࣥ࡜࿧ࡤࢀࡿ⥺ᙧศᩓ࡟࡞ࡿ࡜ᮇᚅࡉࢀࡿ㸬ᡃࠎࡢ◊✲࡛ࡣ㸪ࢺ࣏ࣟࢪ࢝ࣝ㉸ὶືయ࡛࠶ࡿ㉸ὶື࣒࣊ࣜ࢘ 3 - B ┦ࡢ⾲㠃≧ែࢆゎࡁ᫂࠿ࡋ㸪࣐ࣚࣛࢼࢥ࣮ࣥࡢᐇ㦂ⓗほࢆ┠ᣦࡍ㸬ࡑࡢ᪉ἲ࡜ࡋ࡚㸪⾲㠃࡟ບ㉳ࡋࡓ‽⢏Ꮚࢆධᑕࡉࡏࡿࡇ࡜࡛⏕ࡌࡿ㔞Ꮚ࢔ࣥࢻ࣮࢚ࣞࣇ཯ᑕ࡜࿧ࡤࢀࡿ㔞ᏊຊᏛⓗ࡞ᩓ஘⌧㇟ࢆ฼⏝ࡍࡿ㸬ඛ⾜◊✲[2]࡛㸪⮬⏤⾲㠃࡛㉳ࡇࡿ㔞Ꮚ࢔ࣥࢻ࣮࢚ࣞࣇ཯ᑕࡢ┤᥋ほࡀᡂࡉࢀ࡚࠸

ࡿࡀ㸪ᡃࠎࡣ᪂ࡓ࡟ධᑕ‽⢏Ꮚࡢゅᗘࢆ(༶ࡕ㠃ෆ᪉ྥ㐠ື㔞ࢆ)ኚ໬ࡉࡏ࡚㔞Ꮚ࢔ࣥࢻ࣮࢚ࣞࣇ཯ᑕࢆほࡍࡿࡇ࡜ࡀ࡛ࡁࡿ ᐃࢭࣝࢆ㛤Ⓨࡍࡿ㸬ࡑࡢ㝿㸪ධ
ᑕゅᗘࢆࢥࣥࢺ࣮ࣟࣝࡍࡿࡓࡵ࡟⏝࠸ࡿࢫࢸࢵࣆࣥ
ࢢ࣮ࣔࢱ࣮࡜㸪‽⢏Ꮚࢆ᳨▱ࡍࡿࡓࡵࡢ㡢ཫᆺỈᬗ᣺ືᏊ(QTF)ࡀᚲせ࡟࡞ࡿ㸬ᮏⓎ⾲࡛ࡣ㸪㔞Ꮚ࢔ࣥࢻࣞ
࣮࢚ࣇ཯ᑕゅᗘ౫Ꮡᛶほ ⿦⨨ࡢసᡂ࡟ඛ㥑ࡅ࡚㸪ࡇࢀࡽᚲせ࡞ࣃ࣮ࢶ࡟ࡘ࠸࡚⾜ࡗࡓᐇ㦂⤖ᯝ࡟ࡘ࠸࡚ሗ࿌ࡍࡿ㸬
ᅗ 1 ࡣ㸪ᾮయ❅⣲ ᗘ࡛⾜ࡗࡓ QTF ࡢᅽຊ౫Ꮡᛶ
ᐃࡢ⤖ᯝ࡛࠶ࡿ㸬ᅽຊࡀ኱ࡁࡃ࡞ࡿ࡟ࡘࢀඹ᣺࿘
Ἴᩘࡀᑠࡉࡃ࡞ࡾ㸪ࢩࢢࢼࣝࡢࣆ࣮ࢡࡶࡘࡪࢀ࡚࠸
ࡃࡇ࡜ࡀ☜ㄆ࡛ࡁࡿ㸬ྠᵝࡢ ᐃࢆ㸪␗࡞ࡿඹ᣺࿘
Ἴᩘࢆࡶࡘ QTF ࡟ࡘ࠸࡚ࡶ⾜ࡗࡓ㸬ᅗ㸯㸬❅⣲ ᗘ࡟࠾ࡅࡿ QTF ࡢᅽຊ౫Ꮡᛶ

[1] Y. Nagato, M. Yamamoto, and K. Nagai: J. Low Temp. Phys. 110, 1135(1998).
[2] T. Okuda, H. Ikegami, H. Akimoto, and H. Ishimoto, Phys. Rev. Lett. 80, 2857(1998).

56

3-
Transport properties of transition-metal dichalcogenide thin films
JURZQE\PROHFXODUEHDPHSLWD[\
ADept. of Appl. Phys., Univ. of Tokyo, BRIKEN CEMS

Y. WangA, M. NakanoA, Y. KashiwabaraA, M. OngaA, M. YoshidaA, and Y. IwasaA,B Emerging properties of 2D materials have attracted considerable attention since the discovery of graphene fromboth fundamental and applied viewpoints. To date, most of the researches have been performed on mechanicallyexfoliated nano-thick crystals from top-down approach, while bottom-up approach by thin film growth andheterostructure fabrication technique has been of growing significance to further exploration of physical properties
and practical device applications. We have been developing a fundamental route to well-controlled growth of highquality transition-metal dichalcogenides (TMDCs) thin films, and recently succeeded in growing various
TMDCs materials with properties ranging from semiconducting to metallic. We are going to show our growthdetails with transport data of successful sample, WSe2 and TiSe2, which exhibited single crystalline confirmed by
X-ray diffraction(XRD). The obtained WSe2 epitaxial thin films exhibited ambipolar transistor operation uponelectrolyte gating with clear Hall signals for hole-accumulation regime with the maximum mobility of about 3
cm2/Vs at T = 150 K[1], which was in the highest level reported for the first-generation MoS2 thin films grown bychemical-vapor deposition. Obtained 10-monolayer-thick TiSe2 epitaxial thin films exhibited clear CDW transitionat around T = 200 K with the sign change in the Hall coefficient, which is consistent to the behavior reported forbulk TiSe2.
(a)

(b)

(c)

Fig 1. (a) XRD pattern of 1T-TiSe2 and 2H-WSe2. Insert is atomic structure of each polytype (top view).
(b) ambipolar operation of EDLT device on WSe2 (top) and sheet resistance (bottom). (c) Transport
properties of TiSe2 with different selenium level. Upper is R-T curve and lower is Hall coefficient.㻌

[1] M. Nakano, Y. Wang, Y. Kashiwabara, H. Matsuoka, and Y. Iwasa. Nano Letters, 17, 5595-5599 (2017)

57

3
                       

*UDGXDWH6FKRRORI6FLHQFHWKH8QLYHUVLW\RI7RN\R)DFXOW\RI&KHPLVWU\-DJLHOORQLDQ8QLYHUVLW\-XQKDR:DQJ6]\PRQ&KRUD]\.RML1DNDED\DVKL%DUEDUD6LHNOXFND6KLQLFKL2KNRVKLCyanido-bridged bimetallic frameworks have gained immense scientific attention due to its synergetic effects
between magnetism and optics, such as magnetization-induced second harmonic generation, magneto-chiraldichroism, and photo-induced spin-crossover.1 To enrich this field by combining the single molecule magnet (SMM)
behavior and photoluminescence, we report three cyanido-bridged d-f bimetallic materials of two types ofstructures:(i) the layered coordination network, {[DyIII(4-pyridinol)2(H2O)2][CoIII(CN)6]}·0.5H2O (1),2 and (ii) the dinuclearmolecule materials, {[DyIII(4-pyridone)4(H2O)2][MIII(CN)6]}·2H2O (M = Co, 2a; Rh, 2b).3
Magnetic studies revealed the field-induced SMM
behavior in 1 with two relaxation processes, and theeffective energy barrier for faster process is 15.8(5) K.
On the contrary, single slow magnetic relaxation
process under zero dc field was revealed in 2a and 2b,with significantly enhanced effective energy barriers of
187(6) K, and 214(4) K respectively.
By varying the UV excitation wavelengths, allcompounds exhibit the color-tunable emissions fromyellow to greenish blue, due to the changing of theemission ratio of the components from DyIII and organic
ligand. Additionally, exciting 2b by 348 nm could
achieve the intriguing white light emission at room

Figure 1. crystal structures of the layered polymer

temperature.
The effects of the structural change and thetransition metal substitution on photoluminescence andSMM behavior will be discussed.

1 (a) and the dinuclear molecules 2a/2b (b), thedynamic magnetic properties of 2b (c), andphotoluminescence properties of 2b (d)[1] H. Tokoro, S. Ohkoshi, Dalton Trans. 40, 6825 (2011). [2] S. Chorazy, J. Wang, S. Ohkoshi, Chem.Commun.
52, 10795 (2016). [3] J. Wang, S. Chorazy, K. Nakabayashi, B. Sieklucka, S. Ohkoshi, J. Mater. Chem. C, DOI:
10.1039/c7tc03963h

58

3-
SrTiO3 ᇶᯈୖࡢ EuTiO3 ⷧ⭷ࡢ㧗⛣ືᗘ໬࡜☢Ẽ㍺㏦≉ᛶFabrication and magnetotransport properties of EuTiO3 films on
SrTiO3 substrate$ᮾி኱ᏛᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷࠊ% ⌮◊ &(06ࠊ&-67 ࡉࡁࡀࡅ୸ᶫ୍㍤$ࠊ㧗ᶫᆂ%&ࠊ༑಴ዲ⣖$%ࠊᕝ㷂㞞ྖ$%

࠙⫼ᬒࠚ EuTiO3ࡣEu2+ ࢧ࢖ࢺ࡟ 7μBࡢᒁᅾ☢Ẽ࣮࣓ࣔࣥࢺࢆࡶࡘ
཯ᙉ☢ᛶ༙ᑟయ࡛࠶ࡾࠊࢿ࣮ࣝ

ᗘࡣ 5.5 K ࡛࠶ࡿࠋEu ࢆ La ࡟⨨᥮ࡍࡿࡇ࡜࡛ࠊ㟁Ꮚࢻ࣮ࣉ࡟ࡼࡿ࢟ࣕࣜ࢔ᐦᗘࡢไᚚ࡜㔠ᒓ໬ࡀྍ⬟࡛࠶ࡿࠋࡲࡓࠊ༢⣧࡞ࣔࢹ࡛ࣝ㏆ఝ࡛ࡁࡿࣂࣥࢻᗏ㏆ഐ࡟࢟ࣕࣜ
࢔ࡢࢻ࣮ࣉࡀྍ⬟࡛࠶ࡾࠊࢫࣆࣥ೫ᴟ㟁Ꮚࣂࣥࢻ࡜☢Ẽ㍺㏦≉ᛶࡢ㛵ಀࢆㄪ࡭ࡿ⌮᝿ⓗ࡞⣔࡛࠶ࡿࠋ౛࠼ࡤࠊLSAT (001) ୖ࡟ᡂ㛗ࡋࡓᅽ⦰ṍࡳ La ࢻ࣮ࣉ EuTiO3 ⷧ⭷ࡢࣂࣥࢻ࡟ࡣࠊ࢚ࣆࢱ࢟ࢩࣕࣝṍࡳ࡜ࢮ࣮࣐ࣥศ⿣࡟ࡼࡾ࣡࢖ࣝⅬࡀᏑᅾࡋࠊࡑࡢᙳ㡪࡟ࡼࡗ࡚␗ᖖ࣍
࣮ࣝຠᯝࡀ☢໬࡜࢟ࣕࣜ࢔ᐦᗘࡢኚ໬࡟ᩄឤ࡟ᛂ⟅ࡍࡿࡇ࡜ࡀศ࠿
ࡗ࡚ࡁࡓ [1, 2]ࠋ௒ᅇࠊᅽ⦰ṍࡳࡢ㝖ཤ࡜㧗ᡂ㛗࡟ࡼࡿ⛣ືᗘࡢྥୖࢆ≺࠸ࠊEuTiO3 ࡜᱁Ꮚᩚྜࡍࡿ SrTiO3 ᇶᯈୖ࡟᭷ᶵ㔠ᒓ࢞ࢫ※ศᏊ⥺࢚ࣆࢱ࢟ࢩ࣮ (MOMBE) ἲ࡟ࡼࡾⷧ⭷ࢆసᡂࡋࡓࠋ
࠙ᐇ㦂࡜⤖ᯝࠚࢳࢱࣥ※࡜ࡋ࡚ࢳࢱࣥ࢖ࢯࣉ࣏ࣟ࢟ࢩࢻ (TTIP:
Ti(OC3H7)4) ࢆ⏝࠸ࡓ MOMBE ἲ࡟ࡼࡗ࡚ࠊSrTiO3 (001) ᇶᯈୖ࡟EuTiO3 ࢆᡂ⭷ࡋࡓࠋᡃࠎࡢ㐣ཤࡢ◊✲࡛ࡣࠊEuTiO3 ࡢᡂ㛗࡟㐺ࡋࡓ㧗 ࣭㑏ඖ㞺ᅖẼ࡛ SrTiO3 ᇶᯈୖ࡟ᡂ⭷ࡍࡿ࡜ࠊSrTiO3 ᇶᯈ࡟ከࡃ
ࡢ㓟⣲Ḟᦆࡀ⏕ࡌ࡚㔠ᒓ໬ࡋ EuTiO3 ⮬యࡢ㍺㏦≉ᛶホ౯ࡀ࡛ࡁ࡞
࠿ࡗࡓࠋᮏ◊✲࡛ࡣࠊEuTiO3 ࡢ࣌ࣟࣈࢫ࢝࢖ࢺᵓ㐀Ᏻᐃ໬ࡢࡓࡵ࡟
ᡂ㛗ࣉࣟࢭࢫࢆᕤኵࡋ࡚ SrTiO3 ᒙ࡜ࡢ࣊ࢸࣟᵓ㐀ࢆస〇ࡋࠊࡇࡢၥ
㢟ࢆゎỴࡋࡓ (Fig1. (a))ࠋ2 K ࡛ࡢ⛣ືᗘࡣ 3,000 cm2/Vs ࡟㐩ࡋ(Fig1. (b))ࠊ㟁Ꮚࢻ࣮ࣉ EuTiO3 ࡟࠾࠸࡚ึࡵ࡚ࢩࣗࣈࢽࢥࣇࢻࣁ࣮ࢫ᣺ືࡢほ࡟ᡂຌࡋࡓ (Fig1. (c))ࠋࡉࡽ࡟㧗⛣ືᗘࡢⷧ⭷ࢆᚓࡓࡇ࡜

࡛ࠊ␗ᖖ࣮࣍ࣝຠᯝࡸ☢Ẽ᢬ᢠ࡟ࡇࢀࡲ࡛ࡢⷧ⭷࡛ࡣぢࡽࢀ࡞࠿ࡗࡓ
≉␗࡞᣺ࡿ⯙࠸ࡀほࡉࢀࠊࡇࡢ⤖ᯝࡣࡇࡢⷧ⭷ࡢ☢Ẽ㍺㏦≉ᛶࡀࣂࣥࢻࡢヲ⣽ᵓ㐀ࡸࢫࣆࣥᵓ㐀ࢆ᫂░࡟཯ᫎࡋ࡚࠸ࡿࡇ࡜ࢆ♧၀ࡋ࡚࠸ࡿࠋ

Figure1 (a) Schematic of the heterostructure composed of SrTiO3 and La
doped EuTiO3 layers. (b) Mobility at
2 K as a function of sheet carrier
density for various films. (c) SdH
oscillations

observedinhetero-structure

EuTiO3atvariousof

temperatures.

>@ K. S. Takahashi et al. PRL 103, 057204 (2009).
>@ K.S. Takahashi et al. submitted.

59

3-
Co-Si ⨨᥮ᕼᅵ㢮㕲࣮࢞ࢿࢵࢺⷧ⭷࡟࠾ࡅࡿࢡࣛࢫࢱ࣮ࢢࣛࢫ≧ែ࡜ࢫࣆࣥἼບ㉳
Clusterglass Behaviors and Spinwave Excitation in
Co-Si substituted Rare-earth Iron GarnetᕤᏛ⣔◊✲⛉䞉㟁Ẽ⣔ᕤᏛᑓᨷ䞉⏣⏿◊✲ᐊ㻌ᒣཎ㻌 ᘯ㟹䚸㛵㻌 ᐀ಇ䚸⏣⏿㻌 ோ㻌ࢫࣆࣥࢢࣛࢫࡣࢫࣆࣥࡢ͆ࣛࣥࢲ࣒ࢿࢫ͇࡜͆ࣇࣛࢫࢺ࣮ࣞࢩ͇ࣙࣥࡢ☢Ẽ┦㛵࡟ࡼࡾࠊప

࡛ࢫࣆࣥ෾⤖≧ែࢆ࡜ࡿ≀㉁࡛࠶ࡿࠋࢫࣆࣥ෾⤖≧ែ࡛ࡣ࣓ࣔࣜຠᯝࡸගㄏ㉳☢ᛶ࡜࿧ࡤࢀࡿࢫࣆࣥࢢࣛࢫ࡟
≉ᚩⓗ࡞☢Ẽグ᠈ࢆ♧ࡋࠊᛂ⏝ୖࠊ⯆࿡῝࠸ᛶ㉁࡜ࡋ࡚ὀ┠ࡉࢀ࡚࠸ࡿࠋᮏ◊✲࡛ࡣඃࢀࡓࢫࣆࣥἼఏ
ᦙᮦᩱ࡛࠶ࡿᕼᅵ㢮㕲࣮࢞ࢿࢵࢺࢆᑐ㇟࡜ࡋࠊඖ⣲⨨᥮࡟ࡼࡾ LuFe5-2xCoxSixO12㸦LFCS㸧ⷧ⭷࡟࠾࠸࡚ࢡࣛࢫࢱ࣮ࢢࣛࢫ┦ࢆᐇ⌧ࡋࡓࠋࡉࡽ࡟ LFCS ⷧ⭷࡟࠾ࡅࡿࢫࣆ࣏ࣥࣥࣆࣥࢢ࣭㏫ࢫࣆ࣮ࣥ࣍ࣝຠᯝ㟁ᅽࡢᗘ౫Ꮡᛶ࡟ࡘ࠸࡚ሗ࿌ࡍࡿࠋ

ヨᩱࡣࣃࣝࢫ࣮ࣞࢨ࣮ሁ✚ἲ㸦PLD ἲ㸧࡟ࡼࡗ࡚ LFCS㸦x = 0 ~ 0.5㸧༢⤖ᬗⷧ⭷ࢆ Y3Al5O12(111)ᇶᯈ
ୖ࡟ሁ✚ࡋࠊ☢Ẽ≉ᛶࢆప0.5)ࡣࢫࣆࣥ෾⤖ࢭࣥࢱ࣮ඹྠタഛࡢ㉸ఏᑟ㔞Ꮚᖸ΅ィ(SQUID)࡟ࡼࡗ࡚ㄪ࡭ࡓࠋLFCS (x =ᗘ㸦Tg㸧ࢆ íK ࡟᭷ࡍࡿࢡࣛࢫࢱ࣮ࢢࣛࢫ☢ᛶࢆ♧ࡍࡇ࡜ࢆ☜ㄆࡋ࡚࠸ࡿࠋ

࣓ࣔࣜຠᯝࡣ Sun ࡽ࡟ሗ࿌ࡉࢀ࡚࠸ࡿ᪉ἲ࡛ホ౯ࡋࡓ[1]ࠋ☢ሙ୰෭༷㸦FC, H = 100 Oe㸧㐣⛬࡟࠾࠸࡚
Tstop = 180 K ࡛☢Ẽ⦆࿴ࢆ⾜࠸ࠊࡑࡢᚋࠊ᪼

㐣⛬ࡢ☢໬ኚ໬ࢆ࣓ࣔࣜ☢໬㸦Mmem㸧࡜ࡍࡿࠋMmem ࡣTstop ࡟࠾࠸࡚≉␗࡞☢໬ኚ໬ࢆ♧ࡋࠊ☢Ẽ⦆࿴ࢆకࢃ࡞࠸ࣜࣇ࢓ࣞࣥࢫ࡜ࡢᕪศ㸦MmemíMref㸧ࡸᗘᚤศ㸦dMmem/dT㸧࡟࠾࠸࡚㢧ⴭ࡟⾲ࢀࡿࠋࡇࢀࡣ☢Ẽ⦆࿴ࢆ Tstop = 180, 150, 120 K ࡛㐃⥆ⓗ࡟ຍ࠼ࡓሙྜ
࡛ࡶྠᵝ࡟ぢࡽࢀࠊࢫࣆࣥࢢࣛࢫ≉᭷ࡢ⇕ᒚṔࢆグ᠈ࡍࡿ࣓ࣔࣜຠᯝࢆ♧ࡋ࡚࠸ࡿࠋ㏫ࢫࣆ࣮ࣥ࣍ࣝ㟁ᅽࡢィࡣ 10 nm ཌࡢ Pt ⷧ⭷ࢆሁ✚ࡋࡓᚋࠊ㟁Ꮚࢫࣆࣥඹ㬆⿦⨨㸦᪥ᮏ㟁Ꮚ㸧ࢆ⏝࠸࡚ィࡋࡓࠋඖ⣲⨨᥮㔞 x ࡢቑຍ࡟ᚑ࠸ࢲࣥࣆࣥࢢᐃᩘࡀ኱ࡁࡃቑຍࡍࡿࡓࡵࠊLFCS(x = 0.1)ࡢヨᩱ㸦Tg 㹼íK㸧࡟ᑐࡋ࡚ᗘ౫Ꮡᛶࢆホ౯ࡋࡓࠋᗘࡢపୗ࡟ᚑ࠸ᙉ☢ᛶඹ㬆ࡢࣆ࣮ࢡ⥺ᖜ(¨H)ࡢቑຍ࡜ඹ࡟㟁ᅽ್ࡢῶᑡࡀぢࡽࢀࡿࡀࠊࢫࣆࣥࢢࣛࢫ┦ࢆྵࡴࢫࣆࣥ෾⤖ᗘ(Tg)௨ୗࡢ 90 K ࡲ࡛㟁ᅽ᳨ฟࢆ☜ㄆࡋࡓࠋᗘ౫Ꮡᛶࡣࢫࣆࣥ⦆࿴᫬㛫࡟ࡼࡗ࡚ㄝ᫂ࡉࢀࡿࠋㅰ㎡ ᮏ◊✲ࡢ୍㒊ࡣ⛉◊㈝ᇶ┙◊✲ Sࠕ⏕యࡺࡽࡂ࡟Ꮫࡪࡺࡽࡂ࢚ࣞࢡࢺࣟࢽࢡࢫࠖ
ࠊⱝᡭ BࠕᒚṔグ᠈⣲Ꮚ࡟ྥࡅࡓ㓟໬≀ࢡࣛࢫࢱ࣮ࢫࣆࣥࢢࣛࢫࡢࢫࣆࣥἼ◊✲ࠖ࠾ࡼࡧ(⊂)᪥ᮏᏛ⾡᣺⯆఍ࡢࠕ◊✲ᣐⅬᙧᡂ஦ᴗ㸦A.ඛ➃ᣐⅬᙧᡂᆺ㸧ࠖࡢຓᡂࢆᚓ࡚㐙⾜ࡉࢀࡓࠋ[1] M. Adachi et al. Appl. Phys. Express, 8 043002 (2015)[2] Y. Sun, M. B. Salamon, Phys. Rev. Lett. 91 167206 (2003)

60

3

ిྲྀ஫ೖԼͷ s ೾௒఻ಋମ NbN ബບʹ͓͚Δ
THz ઢ‫ܗ‬෼ޫʹΑΔ௒఻ಋώοάεϞʔυͷ‫؍‬ଌSuperconducting Higgs mode in a thin ﬁlm of s-wave superconductor NbN
observed by linear THz spectroscopy with supercurrent injectionA௿Թηϯλʔɾ‫ڀݚ‬։ൃ෦໳ɺB ཧֶ‫ڀݚܥ‬Պɾ෺ཧֶઐ߈ɾౡ໺‫ࣨڀݚ‬ɺC JST ͖͕͚͞ɺ
D
৘ใ௨৴‫( ߏػڀݚ‬NICT)தଜ঵ࢠ A ɺ൧ా༤େ B ɺদӬོ༎ B,C ɺࣉҪ߂ߴ D ɺౡ໺྄ A,B௒఻ಋసҠ͸ɺҰൠʹෳૉ਺ͷடংύϥϝʔλʔ Δ ʹΑͬͯಛ௃͚ͮΒΕΔɻ‫ݱ‬৅࿦తʹ͸ɺෳૉฏ໘ʹ౤Ө͞Εͨ Δ ʹର͢Δ‫ܥ‬ͷࣗ༝ΤωϧΪʔ͕ɺਤ 1(ࠨ্) ʹࣔ͢Α͏ʹɺߴԹͰ͸୯७ͳύϥϘϥ‫͕ͩܕ‬ɺ௿ԹͰ͸ϝΩγΧϯϋοτ‫͍ͯͬͳʹܕ‬ΔͷͰࣗൃతʹରশੑ͕ഁΕɺ‫ج‬ఈঢ়ଶʹಛఆͷ༗‫ݶ‬஋ʢਤதͷ੨‫ٿ‬ʣΛબͿసҠͱͯ͠‫ه‬ड़͞ΕΔɻͦͷूஂྭ‫ى‬Ϟʔυʹ͸ɺಈ‫޲ํ౓֯ͱ޲ํܘ‬ʢҐ૬ʣͷৼಈʢਤதͷ ↔ʣ͕ߟ͑ΒΕΔɻ௒఻ಋମͷ৔߹ɺҐ૬Ϟʔυ͸ήʔδ৔ͱͷ݁߹ʹΑΓফࣦ͢ΔҰํɺಈ‫ʹ޲ํܘ‬ϙςϯγϟϧΛ‫্͕͚ۦ‬Δɺ͍ΘΏΔ௒఻ಋώοάεϞʔυ͸ɺ͘͝࠷ۙɺTHz ೾ൃੜٕज़
ͷਐาʹΑΓ‫؍‬ଌՄೳʹͳΓɺ௒఻ಋঢ়ଶΛධՁ͢Δ৽ͨͳϓϩʔϒͱͯ͠‫ظ‬଴͞Ε͍ͯΔɻ
௒఻ಋώοάεϞʔυ͸ɺి‫ؾ‬ɾ࣓‫ؾ‬෼‫ۃ‬Λ൐Θͳ͍ͷͰɺ௨ৗɺి࣓೾ʹର͢Δઢ‫ܗ‬Ԡ౴ͱͯ͠͸‫؍‬ଌͰ͖ͳ͍ɻͦͷͨΊɺ͜Ε·Ͱͷ࣮‫Ͱݧ‬͸ɺߴ‫౓ڧ‬ͷ THz ೾Λ༻͍ͯɺϙςϯγϟϧΛม‫ͨͤ͞ܗ‬Γߴ࣍ߴௐ೾Λൃੜͤͨ͞Γͯ͠‫؍‬ଌ͞Ε͖ͯͨɻ͔͠͠ɺ࠷ۙɺ௒఻ಋମʹ௚ྲྀిྲྀΛҹՃ͢Δͱɺిྲྀʹฏߦͳภޫͷి࣓೾ͱώοάεϞʔυ͕ઢ‫͠߹݁ʹܗ‬ɺޫֶ఻ಋ౓ͷ࣮෦ʹ ω = 2Δ ͷ‫ڞ‬໐ϐʔΫ͕‫ݱ‬ΕΔ͜ͱ͕ཧ࿦తʹఏҊ͞Εͨ [1]ɻώοάεϞʔυ͕ɺ௿‫౓ڧ‬ͷ THz ೾ͷઢ‫ܗ‬Ԡ౴ͱͯ͠‫؍‬ଌͰ͖ΔΑ͏ʹͳΕ͹ɺଞͷޫϙϯϓͱ΋૊Έ߹ΘͤΔ͜ͱ͕Ͱ͖ɺ֨ஈʹԠ༻ൣғ͕޿͕Δɻͦ͜Ͱզʑ͸ɺਤ 1(ӈԼ) ʹࣔͨ͠Α͏ͳηοτΞοϓͰɺs ೾௒఻ಋମ NbN ͷബບࢼྉʢް͞ 25 nmʣʹɺྟքిྲྀ
ີ౓ʢ≈ 3 MA/cm2 ʣʹඖఢ͢Δ௚ྲྀిྲྀΛྲྀ͠ͳ͕Β THz ೾Λೖࣹͤ͞ɺಁա THz ೾Λ࣌ؒ෼ղଌఆ
͢Δ͜ͱͰɺ௚ྲྀిྲྀͷ஫ೖʹΑΔ THz ޫֶ఻ಋ౓ͷมԽΛௐ΂ͨɻͦͷ݁ՌɺిྲྀͱฏߦͳภޫͰ͸ਤ 2 ͷΑ͏ʹ‫؍‬ଌ͞ΕͨϐʔΫ͕ɺిྲྀͱ௚ަํ޲ͷภޫͰ͸ফࣦ͢Δ͜ͱΛ֬ೝͨ͠ɻ
150

T<TC

薄膜

Re(Δ)
ϐρήηϠʖχ
Ғ૮Ϡʖχ

Im(Δ)

6x103

T=4.5 K

5

100

4

'V
V
 V (fitting)

50

3
2
1

0

ルツ
ラヘ
射テ

0
4

定電

流源

V Z (S/cm)

超伝導体

ツ
ヘル
テラ
透過

'V Z (S/cm)

自由エネルギー

T>TC

5

6
7
Energy (meV)

8

-1

入

ਤ 2.

ޫֶ఻ಋ౓ͷ࣮෦ʢ࣮‫݁ݧ‬Ռ͸

ਤ 1. ʢࠨ্ʣ௒఻ಋடংύϥϝʔλʔ (Δ) ͱࣗ༝ΤωϧΪʔ࣮ઢɺཧ࿦‫ۂ‬ઢ͸఺ઢʣͱɺͦͷిྲྀͷؔ܎ɻʢӈԼʣ࣮‫ݧ‬ͷηοτΞοϓɻ

ON/OFF Ͱͷࠩ෼ʢΔσ, ੺ઢʣɻ[1] A. Moor, A. F. Volkov, E. B. Konstantin, Phys. Rev. Lett. 118, 047001 (2017).

61

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Magnetotransport in a ferromagnetic (In,Fe)As / (In,Mn)As pn junction
Kohei Okamoto, Le Duc Anh, and Masaaki Tanaka
Department of Electrical Engineering and Information Systems, The University of Tokyo
Ferromagnetic pn junctions composed of p- and n-type ferromagnetic semiconductors (FMSs) can beone of the building blocks of future spintronic devices such as spin MOSFET [1]. However, althoughp-type FMSs are widely studied, the lacking of n-type FMSs was the main obstacle for making
ferromagnetic pn junctions. Recently, (In,Fe)As is attracting a lot of attentions as the first n-type III-V FMS[2,3], and by combining with p-type FMS (In,Mn)As, it enables us to realize a nearly lattice-matched
ferromagnetic pn junction. In this study, we investigate the epitaxial growth and magneto-transport
properties of ferromagnetic pn junctions composed of (In,Fe)As and (In,Mn)As.
We grew (In0.96,Fe0.04)As (20 nm) / InAs (9 nm) / (In0.95,Mn0.05)As (20 nm) / InAs:Be (300 nm, Be
concentration: 4×1018 cm-3) structure on a p+-InAs substrate by molecular beam epitaxy (MBE). In situ
reflection high energy electron diffraction (RHEED) patterns during the growth showed bright and streaky
zinc-blende patterns, indicating a good 2-dimensional growth mode. The sample was treated withammonium sulfide in order to remove the surface native oxide. Afterwards, electrical contact with adiameter of 80 μm was formed on the top of the sample by using indium and gold wire.
In the transport measurement, the bias voltage polarity is defined as shown in Fig. 1 (a). Figure 1(b)-(d) shows schematic band profiles and transport mechanisms of the pn junction under various bias
voltages V: (b) At negative V, electrons tunnel from the valence band (VB) and the impurity band (IB) of(In,Mn)As to the conduction band (CB) of (In,Fe)As and the conductance increases; (c) at small positive V,
tunneling current from the VB of (In,Mn)As should be suppressed by the bandgap, and that from the IB of(In,Mn)As dominates; (d) at large positive V, diffusive current flows between the CBs and VBs of both p
and n sides. Figure 2 shows the V dependence of the differential conductance (dI/dV) measured at room
temperature (red) and 4 K (blue), in which all the regions (b), (c), (d) were observed. In the region (c), there
is a broad peak of dI/dV, which can be attributed to the tunneling related to the IB of (In,Mn)As becausesuch a peak was not seen in the structure of (In,Fe)As / non-magnetic p+-InAs in our previous work [3].
Figure 3 shows magnetoresistance (MR) curves measured at 4 K under different V corresponding to theregion (b), (c), and (d) in Fig. 1. Magnetic field direction was in-plane [-110]. MRs in three regions show
different signs and shapes, corresponding to different transport mechanisms. In the presentation, the origin
of MR and the dI/dV - V curves will be discussed in detail.
Acknowledgements This work was partly supported by Grants-in-Aid for Scientific Research (No.
26249039, No. 17H04922), CREST of JST, the Murata Science Foundation, and the Spintronics Research
Network of Japan (Spin-RNJ).

Fig. 1 (a) The schematic ofFig. 2
dI/dV at roomtransport measurement. (b)-(d)temperature (RT) and 4 K.
schematic band profiles under(b)-(d) represent the bias voltage
different bias voltages.
regions shown in fig. 1.
References[1] S. Sugahara et al., J. Appl. Phys. 97 10D503 (2005).
[2] P. N. Hai et al. Appl. Phys. Lett. 101 182403 (2012).
[3] L. D. Anh et al. Nat. Commun. 7, 13810 (2016).

62

Fig. 3 MR curves at 4 K with
H // [-110] under different bias
voltages. (b)-(d) represent thebias voltage regions shown infig. 1.

3-
Higgs spectroscopy in a d-wave superconductor
'HSDUWPHQWRI3K\VLFV8QLYHUVLW\RI7RN\R-DSDQ
&U\RJHQLF5HVHDUFK&HQWHU8QLYHUVLW\RI7RN\R-DSDQ
/DERUDWRLUH0DWpULDX[HW3KpQRPqQHV4XDQWLTXHV8QLYHUVLWp3DULV'LGHURW)UDQFH
'HSDUWPHQWRI3K\VLFV8QLYHUVLW\RI0DU\ODQG&ROOHJH3DUN86$.RWD.DWVXPL5RPDLQ*UDVVHW<DQQ*DOODLV-RVKXD+LJJLQV5LFKDUG*UHHQH
DQG5\R6KLPDQR
When a spontaneous breaking of a continuous symmetry occurs, two types ofcollective excitations of the order parameter emerge. In a superconductor thephase modes, or Goldstone modes, couple to light through the Anderson-Higgs
mecanism responsible for the Meissner effect. On contrary the amplitude mode,
also called Higgs mode because of its analogy with the Higgs boson of particle
physics, does not couple directly to light and its observation has remained elusive
until very recently.
In this context, the detection of a Higgs mode in the conventional s-wave
superconductor NbN using non-linear THz spectroscopy [1], and the recent
confirmation of a Higgs mode observation using Raman spectroscopy in the
charge density wave superconductors 2H-NbSe2 [2], have opened new
perspectives on the coupling to the Higgs mode and its study. The Higgs
spectroscopy using non-linear THz techniques is now well established inconventional superconductors and has paved the way for the study of more
complicated systems such as multi-band or d-wave superconductors [3].
In this study we investigate the Higgs spectroscopy of the d-wave electron doped
cuprate superconductor Pr2-xCexCuO. Using strong monocycle and multicycle
THz pump pulses, we have successfully observed transient oscillations

Figure 1: Pictorial representationof the free energy corresponding to(a) s-wave Higgs mode and (b)additionalnons-waveHiggs

modes [4]associated to the Higgs mode. Using a THz probe we are able to directly compare our observations to those of the swave superconductor NbN and shed light on the differences between the Higgs mode in these very different systems.
[1] R. Matsunaga and R. Shimano Phys. Scr. 92, 024003 (2017)[2] R. Grasset, T. Cea, Y. Gallais et al arXiv:1704.04042 (2017)[3] K. Katsumi, N. Tsuji, Y. I. Hamada, et al arXiv: 1711.04923 (2017)[4] Y. Barlas and C. M. Varma Phys. Rev. B 87, 054503 (2013)63

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࢖ࣉࢩࣟࣥ㓟໬㕲ࡢ࣑ࣜἼ☢Ẽᅇ㌿⌮Ꮫ⣔◊✲⛉࣭໬Ꮫᑓᨷ࣭኱㉺◊✲ᐊ⏕஭㣕㫽ࠊྜྷΎࡲࡾ࠼ࠊ኱㉺ៅ୍ᙜ◊✲ᐊ࡛ࡣࠊ࢖ࣉࢩࣟࣥ㓟໬㕲㸦İ)H2㸧࠾ࡼࡧ㔠ᒓ⨨᥮ᆺ࢖ࣉࢩࣟࣥ㓟໬㕲㸦İ0x)Híx2㸧ࡀࠊ࣑ࣜἼ㸦a *+]㸧࡜࿧ࡤࢀࡿ㧗࿘Ἴࡢ㟁☢Ἴࢆࠊࢮࣟ☢ሙ໬ᙉ☢ᛶඹ㬆࡟ࡼࡾ྾཰ࡋࠊࡑࡢඹ㬆྾཰࿘Ἴᩘࡀ☢ᛶయ᭱㧗࡛࠶ࡿࡇ࡜ࢆሗ࿌ࡋ࡚ࡁࡓ㸦ᅗ D㸧ࠋᮏ◊✲࡛ࡣࠊ࢔࣑ࣝࢽ࣒࢘⨨᥮ᆺ࢖ࣉࢩࣟࣥ㓟໬㕲ࡢ࣑ࣜἼ㡿ᇦ࡟࠾ࡅࡿ೫ග≉ᛶࢆㄪ࡭ࡓࡢ࡛ሗ࿌ࡍࡿࠋ
ヨᩱࡣࢰࣝࢤࣝἲ࡟ࡼࡾྜᡂࢆ⾜ࡗࡓࠋᚓࡽࢀࡓヨᩱࡣ༢┦ࡢ İ$O)H2 ࡛࠶ࡾࠊ㉸ఏᑟ㔞Ꮚᖸ΅ィ࡟ࡼࡿᐃ࡟ࡼࡾࠊಖ☢ຊࡀ N2H ࡢᙉ☢ᛶయ࡛࠶ࡿࡇ࡜ࡀศ࠿ࡗࡓࠋ⢊ᮎ≧ࡢ İ$O)H2 ࢆ࣌ࣞࢵࢺ≧࡟Ⲵ㔜ᡂᆺࡋࠊཌࡳࢆኚ࠼ࡓヨᩱࢆసᡂࡋ࡚
྾཰ࣆ࣮ࢡࡀほᐃࢆ⾜ࡗࡓ࡜ࡇࢁࠊ࠸ࡎࢀࡢヨᩱࡶ  *+] ࡟ࡉࢀࡓࠋ࣑ࣜἼᅇ㌿ᛶ⬟ࢆㄪ࡭ࡿࡓࡵࠊİ$O)H2 ࣌ࣞࢵࢺヨᩱࢆ 7 ࡢࣃࣝࢫ☢ሙ࡛╔☢ࡋࡓࠋᆶ┤೫ගࡢࢸࣛ࣊ࣝࢶࣃࣝࢫἼࢆヨᩱ࡟↷ᑕࡋࡓ࡜ࡇࢁࠊヨᩱࢆ㏱㐣ࡋࡓᚋࡣࠊᴃ෇೫ග࡜

D)H%࡞ࡗ࡚࠸ࡓ㸦ᅗ E㸧ࠋ㏱㐣ගࡢỈᖹᡂศཬࡧᆶ┤ᡂศ

)H$

࠿ࡽࠊᅇ㌿ゅᗘཬࡧᴃ෇⋡ࡢ࿘Ἴᩘ౫Ꮡᛶࢆồࡵࡓ࡜

)H&ࡇࢁࠊᴃ෇⋡ࡣඹ㬆࿘Ἴᩘࢆ୰ᚰ࡜ࡍࡿࣆ࣮ࢡᆺࡢ࿘

)H'Ἴᩘ౫Ꮡᛶࢆ♧ࡋࠊ╔☢ࡋࡓ࣌ࣞࢵࢺヨᩱࡢ 1 ᴟഃ࠿ࡽධᑕࡋࡓሙྜࡢ᭱኱್ࡣ *+] ࡛  ࡛࠶ࡗࡓࠋ
୍᪉ࠊᅇ㌿ゅࡣඹ㬆࿘Ἴᩘࢆ୰ᚰ࡜ࡍࡿᚤศᆺࡢ࿘Ἴ
ᩘ౫Ꮡᛶࢆ♧ࡋࠊᅇ㌿ゅࡢ᭱኱್ࡣ *+] ࡛ࠊ
᭱ᑠ್ࡣ  *+] ࡛í ࡛࠶ࡗࡓࠋ☢ᴟࡢྥࡁࢆ཯

E)URP1SROH)URP6SROH




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

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







 





ほ

aD[LV㌿ࡉࡏࡿ࡜ࠊᴃ෇⋡ཬࡧᅇ㌿ゅࡢ➢ྕࡀ཯㌿ࡋࡓࠋ

M





















ࡉࢀࡓ࣑ࣜἼᅇ㌿ᛶ⬟ࡣࠊṧ␃☢໬ࡢ᪉ྥ࡟౫

Ꮡࡋ࡚࠾ࡾࠊ⮬↛ඹ㬆⌧㇟࡟࠾ࡅࡿ☢໬ࡢṓᕪ㐠ື࠿ࡽᨺᑕࡉࢀࡿ⮬⏤ㄏᑟῶ⾶࡟ࡼࡾࠊࡇࡢࡼ࠺࡞೫ග≉ᅗ  D İ$O)H2 ࡢ⤖ᬗᵓ㐀࡜ࠊࢮࣟ☢ሙᙉ☢ᛶඹ㬆࡟࠾ࡅࡿ☢໬ࡢṓᕪ㐠ື E  ╔☢ࡋࡓ İ$O)H2 ࣌ࣞࢵࢺヨᩱࢆ㏱㐣ࡋࡓࢸࣛ࣊ࣝࢶࣃࣝࢫගࡢఏ᧛ࡢᵝᏊࠋᛶࡀ⏕ࡌࡓ࡜⪃࠼ࡽࢀࡿࠋ
>@ 1DPDL66DNXUDL01DNDMLPD76XHPRWR.0DWVXPRWR0*RWR66DVDNLDQG62KNRVKLJ. Am. Chem.
Soc.  >@ $1DPDL0<RVKLNL\R.<DPDGD66DNXUDL7*RWR7<RVKLGD70L\D]DNL01DNDMLPD76XHPRWR
+7RNRURDQG62KNRVKLNature Communications   
>@ 62KNRVKL$1DPDL7<DPDRND0<RVKLNL\R.,PRWR71DVX6$QDQ<8PHWD.1DNDJDZDDQG+
7RNRURScientific Reports  >@ 1DPDL0<RVKLNL\RDQG62KNRVKLIEEE Magnetic Letters  

64

3-
᭷ᶵȘ-(BEDT-TTF)2I3࡟࠾ࡅࡿ
㟁Ⲵ⛛ᗎ┦࠾ࡼࡧ massless Dirac㟁Ꮚ┦ࡢ☢Ẽ㍺㏦≉ᛶTransport property of Massless Dirac Fermion(MDF) and Charge
Order(CO) electrons in Į-(BEDT-TTF)2I3
ᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷ㮵㔝⏣◊✲ᐊ㻌㻝㻌ᮾி⌮⛉኱Ꮫ⌮ᕤᏛ㒊≀⌮Ꮫ⛉㻌㻞㻌✄ᇉ㻌 㞝௓㻌㻝㻘㻌 ᯘ㻌 ♸ᶞ㻌㻝㻘㻌 ᮧ℩㻌 ⚽᫂㻌㻝㻘㻌 ➉ཎ㻌 㝠௓㻌㻝㻘㻌 ᐑᕝ㻌 ࿴ஓ㻌㻝㻘㻌 ⏣ᮧ㻌 㞞ྐ㻌㻞㻘㻌 㮵㔝⏣㻌 ୍ྖ㻌㻝㻌㉁㔞ࢮࣟࡢDirac㟁Ꮚ⣔(MDF)࡟☢ሙࢆ༳ຍࡍࡿ࡜Landau‽఩ࡀᙧᡂࡉࢀࡿࠋྛ‽఩ࡣࡑࢀࡒࢀ2ࡘࡢࢫࣆࣥ≧ែ࡜2ࡘࡢࣂ࣮ࣞ≧ែ࡟4㔜⦰㏥ࡋ࡚࠾ࡾࠊ☢ሙࡣࡇࢀࡽࡢ⦰㏥ࢆゎࡃຠᯝࡀ࠶ࡿࠋࢫࣆࣥ
⦰㏥ࡢศ⿣ࡣZeemanຠᯝ࡟ࡼࡿࡓࡵ༳ຍ☢ሙࡢ⤯ᑐ್࡟౫ᏑࡍࡿࡀࠊMDFࡀᐇ⌧ࡋ࡚࠸ࡿ࡜ࡉࢀࡿࢢ
ࣛࣇ࢙ࣥ࡟࠾࠸࡚ࠊ⦰㏥ࡢศ⿣ࡀᒙ㛫☢ሙᡂศ࡟౫Ꮡࡍࡿ౛ࡶ࠶ࡾ[1]ࠊᚲࡎࡋࡶ Zeemanศ⿣࡛ㄝ࡛᫂ࡁ
ࡿࡶࡢ࡛ࡣ࡞࠸ࠋ୍᪉࡛ MDFࡀᐇ⌧ࡋ࡚࠸ࡿ࡜ࡉࢀࡿ᭷ᶵᑟయȽ-(BEDT-TTF)2I3࡛ࡢ NMR ᐃ࡛ࡣࠊప
㡿ᇦ࡟࠾࠸࡚㔞Ꮚࢫࣆࣥᙉ☢ᛶ≧ែࡀᐇ⌧ࡋ࡚࠾ࡾࠊZeemanຠᯝࡀᨭ㓄ⓗ࡜࡞ࡗ࡚࠸ࡿࡇ࡜ࡀ♧၀ࡉࢀ࡚࠸ࡿࠋ[2]௒ᅇࠊ᭷ᶵᑟయȽ-(BEDT-TTF)2I3 ࡟࠾ࡅࡿ Dirac㟁Ꮚ⣔ࡢ☢ሙ࡟ࡼࡿ Landauࢮ࣮ࣟࣔࢻࡢ⦰㏥ࡢศ⿣ࢆ☢Ẽ᢬ᢠ ᐃ࡟ࡼࡾㄪ࡭ࡓ⤖ᯝࢆሗ࿌ࡍࡿࠋࡇࡢ≀㉁ࡢ Dirac㟁Ꮚ⣔ᅽຊࢆࣃ࣓࣮ࣛࢱ࡜ࡋ࡚㟁Ⲵ⛛ᗎ⤯⦕య┦࡟㞄᥋ࡋ࡚࠸ࡿࡓࡵ[3]ࠊ㟁Ꮚ㛫┦஫స⏝ࡀ኱ࡁ࠸ Dirac㟁Ꮚ⣔࡛࠶ࡿࡇ࡜ࡀᮇᚅࡉࢀࡿࠋ௒
ᅇȽ-(BEDT-TTF)2I3 ࡢ☢Ẽఏᑟ㠃ෆ᢬ᢠࡢ☢ሙ㺃ゅᗘ౫Ꮡᛶࢆ࠸ࡃࡘ࠿ࡢᅽຊ࡛

ᐃࡋࡓࠋࡲࡓᖖᅽୗ Ƚ-(BEDT-TTF)2I3 ࡢ㟁Ⲵ⛛ᗎ⤯⦕య≧ែ࡟࠾࠸࡚ࠊᨃ஧ḟඖఏᑟᒙ࡟ᆶ┤࡞᪉ྥ࡟㧗㟁ᅽࣃࣝࢫࢆ༳ຍࡍࡿ࡜ࠊ135K ࡛ࡢ⤯⦕య໬ࡀᾘኻࡋࠊప ࡲ࡛㧗ఏᑟ≧ែࡀ⥔ᣢࡉࢀࡿࡇ࡜ࢆぢฟࡋࡓ㸦ୗᅗཧ↷㸸ࡓࡔࡋࠊ㧗ᅽࢆ༳ຍࡋࡓ㠃㛫㸰➃Ꮚ࡛ࡢ㟁Ẽ᢬ᢠ ᐃ㸧ࠋ㟁Ẽ᢬ᢠࡢ ᗘ౫Ꮡᛶࡣࠊ㧗 ࡛㔠ᒓⓗ࡛ࡣ࠶ࡿࡀ ᗘ౫Ꮡᛶࡣ
ᙅࡃࠊప ࡛㠀㔠ᒓⓗ࡞᣺ࡿ⯙࠸࡟ኚࢃࡿ࡞࡝ࠊ㉁㔞ࢮࣟࡢ Dirac 㟁Ꮚ⣔࡜㢮ఝ࡞≉ᚩࢆ♧ࡍࠋⓎ⾲࡛ࡣࠊ☢ሙゅᗘ࡟ᑐࡍࡿࢮ࣮ࣟࣔࢻ࡟࠾ࡅࡿ⦰㏥
ࡀゎࡅࡿ᣺⯙࠸࡜ࡑࡢᅽຊ
౫Ꮡᛶࠊࡲࡓ㧗㟁ᅽࣃࣝࢫࢆ
༳ຍࡋࡓ᫬ࡢ᢬ᢠࡢ᣺ࡿ⯙࠸࡟ࡘ࠸࡚㆟ㄽࡍࡿࠋ[1] A. F. Young, C. R. Dean, L. Wang, H. Ren, P. Cadden-Zimansky, K. Watanabe, T.Taniguchi, J. Hone, K. L.
Shepard and P. Kim, Nature Physics 8, 550–556 (2012)[2] ᯇ㔝Ꮫ(2016) ᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷಟኈㄽᩥ(ᮍබห)[3] K. Kajita, Y. Nishio, N. Tajima, Y. Suzumura and A. Kobayashi, J. Phys. Soc. Jpn. 83, 072002(2014).

65

3-༢ཎᏊᒙ࣒࣊ࣜ࢘㻟ࡢẼᾮ┦㌿⛣ࡢほ Observation of Gas-Liquid Phase Transition in Monolayer 3He⌮Ꮫ⣔◊✲⛉ ≀⌮Ꮫᑓᨷ ⚟ᒣ◊✲ᐊᑠᕝ຾அࠊ㙊⏣㞞༤ࠊྜྷ෠ឡᮃ࢔ࣅ࢞࢖ࣝࠊᯇ஭᭸⿱ࠊ⚟ᒣᐶHe ࡣ㉁㔞ࡀ㍍࠸ࡇ࡜࡟ຍ࠼࡚ཎᏊ㛫ࡢᘬຊ┦஫స⏝ࡀᑠࡉ࠸ࡓࡵ㔞Ꮚᛶࡀᴟࡵ࡚㧗ࡃࠊᖖᅽ࡛ࡣ⤯ᑐ㞽ᗘ࡛ࡶᅛ໬ࡏࡎᾮయࡢࡲࡲᏑᅾࡍࡿࠋ2ḟඖ࡟㛢ࡌ㎸ࡵࡓ3Heࡢሙྜࠊ⌮ㄽィ⟬࡛ࡣ᭷㝈ࡢ㠃ᐦᗘ࡟࢚ࢿࣝࢠ࣮ࡢᴟᑠ್ࢆᣢࡓ࡞࠸ࡇ࡜࠿ࡽࠊᇶᗏ≧ែࡣẼయ࡛࠶ࡿ࡜⪃࠼ࡽࢀ࡚ࡁࡓ[1]ࠋࡋ࠿ࡋࠊࢢࣛࣇ࢓
࢖ࢺୖ࡟≀⌮྾╔ࡋࡓ༢ཎᏊᒙ 3He (3He/gr) ࡢ⇕ᐜ㔞㠃ᐦᗘᐃࡢ⤖ᯝࠊ⇕ᐜ㔞ࡢࣇ࢙࣑ࣝᾮయ㡯ࡢಀᩘγ ࡀ≤ 0.8 nm ࡛ࡣࠊ ࡢῶᑡ࡜ඹ࡟┤⥺ⓗ࡟ῶᑡࡍࡿࡇ࡜ࡀศ࠿ࡗࡓ[2]ࠋࡇࢀࡣࠊ྾╔ࡋࡓ 3He

ࡀ⮬ᕫจ㞟ᾮయ┦ (ᅗ(a)) ࢆᙧᡂࡋ࡚࠸ࡿࡇ࡜ࢆព࿡ࡋ࡚࠸ࡿࠋࢢࣛࣇ࢓࢖ࢺࢆ 4He ࡛ࣉࣞࢥ࣮ࢺࡋࡓ
ᇶᯈୖ( 3He/4He/gr) ࡸ྾╔➨୕ᒙ┠ࡢ3He (3He/3He/4He/gr)࡛ࡶྠᵝ࡟⮬ᕫจ㞟ᾮయ┦ࡀほࡉࢀࡿࡇ࡜࠿

ࡽࠊࡇࡢ⮬ᕫจ㞟⌧㇟ࡣᇶᯈ࡟౫ࡽ࡞࠸⣧⢋2ḟඖ 3He ࡢᇶᗏ≧ែ࡛࠶ࡿ࡜
⪃࠼ࡽࢀࡿࠋࡑࡢᚋ⾜ࢃࢀࡓ㔞Ꮚࣔࣥࢸ࢝ࣝࣟィ⟬[3] ࡢ⤖ᯝࠊࢢࣛࣇ࢓࢖ࢺ
⾲㠃ࡸୗᆅࡢ 4He ࡢ࿘ᮇⓗ࡞྾╔࣏ࢸࣥࢩࣕࣝࢆຍ࿡ࡍࡿࡇ࡜࡛ࠊ⮬ᕫจ㞟ᾮయ┦ࡀⓎ⌧ࡋᚓࡿ࡜࠸࠺⤖ᯝࡀ┦ḟ࠸࡛ሗ࿌ࡉࢀ࡚࠸ࡿࡀࠊࡇࢀࡽࡢ⌮ㄽィ⟬࡛ࡣ =0࠿ࡽẼᾮ┦ศ㞳ࡀ⏕ࡎࡿ࡜࠸࠺ᐇ㦂⤖ᯝࢆ෌⌧࡛ࡁ࡚࠾ࡽࡎࠊ
ࡲࡔᐇ㦂࡜⌮ㄽ࡟ࡣ㝸ࡓࡾࡀ࠶ࡿࠋ
ࡑࡇ࡛ᮏ◊✲࡛ࡣࠊࡇࢀࡲ࡛࡜ࡣ኱ࡁࡃ␗࡞ࡿ࿘ᮇ࣏ࢸࣥࢩࣕࣝࢆᣢࡗࡓ྾

ਦ D  ࣙ‫ॄڿހ‬ӹର૮╔ᇶᯈ࡜ࡋ࡚ࠊࢢࣛࣇ࢓࢖ࢺࢆ㔜Ỉ⣲໬Ỉ⣲(HD) 2 ศᏊᒙ࡛ࣉࣞࢥ࣮ࢺࡋࡓ

͹΢ϟʖζਦ

ୖ࡟྾╔ࡋࡓ3He༢ཎᏊᒙ (3He/HD/HD/gr) ࡟ᑐࡋ࡚ࠊప㠃ᐦᗘᇦ (0.10 ≤≤ 3.5 nm )࡛⇕ᐜ㔞⮬ᕫจ㞟⌧㇟ࡀほᐃࢆ⾜ࡗࡓࠋࡑࡢ⤖ᯝࠊࡇࢀࡲ࡛ࡢ⤖ᯝ࡜㠀ᖖ࡟㏆࠸ࡉࢀࡓ (ᅗ(b))ࠋࡇࢀࡣࠊ⮬ᕫจ㞟ᾮయ┦ࡢⓎ⌧࡟ୗᆅࡢ࿘ᮇ࣏ࢸࣥࢩࣕࣝࡣỴᐃⓗ࡞ᙺ๭ࢆᯝࡓࡉ࡞࠸࡜ࡍࡿࡇࢀࡲ࡛ࡢ୺ᙇࢆ⿵ᙉ
ࡍࡿ⤖ᯝ࡛࠶ࡿࠋ
ࡇࡢᵝ࡟ࡈࡃప㠃ᐦᗘࡢ⮬ᕫจ㞟ᾮయࡀᏑᅾࡍࡿ࡞ࡽࡤࠊ᭷㝈࡟ᑐᛂࡍࡿẚ⇕␗ᖖࡀᮇᚅࡉࢀࡿࡀࠊࡇࢀࡲ࡛ࡢ
ࡉࢀ࡚࠸࡞࠸ࠋࡑࡇ࡛⌧ᅾࠊࡼࡾ㧗
㔞

ᗘ࡛⮫⏺Ⅼ

≤ 80 mK ࡛ࡢᐃ࡛ࡣほ࡛ࡇࡢ⮫⏺Ⅼࢆ᥈⣴ࡍࡿࡓࡵࡢ⇕ᐜᐃ⿦⨨ࢆ〇స୰࡛࠶ࡿࠋᮏⓎ⾲࡛ࡣࡑࢀ࡟ࡘ࠸࡚ࡶሗ࿌ࡍࡿࠋ

ਦ E  γ͹໚ືౕғଚ੓

[1]M. D. Miller and L. H. Nosanow, J. Low. Temp. Phys. 32, 145 (1978); V. Grau et al., Phys. Rev. Lett. 89, 045301(2002).
[2]D. Sato et al., Phys. Rev. Lett. 109. 235306 (2012).
[3] M. C. Gordillo and J. Boronat. Phys. Rev. Lett. 116, 145301 (2016); Phys. Rev. B 94, 165421 (2016).

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㸱ḟඖࣂࣝࢡ㉸ఏᑟయ࡟࠾ࡅࡿ㠀┦཯㟁Ⲵ㍺㏦⌧㇟Unidirectional electric transport in 3D bulk superconductorᕤᏛ⣔◊✲⛉㻌 ≀⌮ᕤᏛᑓᨷ㻌 ᒾబ䞉୰㔝◊✲ᐊ㻌㉺ᕝ㻌 ⩧ኴ䚸஭ᡭୖ㻌 ᩄஓ䚸୪ᮌ㻌 ᏹඔ䚸➲ᕝ㻌 ᓫ⏨䚸ᒾబ㻌 ⩏ᏹ㻌Keywords: ㉸ఏᑟࠊ㠀┦཯㍺㏦ࠊࢲ࢖࣮࢜ࢻ≉ᛶ≀㉁ࡢ⤖ᬗᵓ㐀ࡢ✵㛫཯㌿ᑐ⛠ᛶࡀ◚ࢀ࡚࠸ࡿ࡜ࡁࠊᵝࠎ࡞⯆࿡῝࠸⌧㇟ࡀᩘከࡃᏑᅾࡍࡿࡇ࡜ࡀ▱ࡽࢀ࡚࠸ࡿࠋࡇࢀࡣࠊ✵㛫཯㌿ᑐ⛠ᛶࡢ◚ࢀࡓ⤖ᬗ࡛ࡣࠊ㟁Ꮚࣂࣥࢻࡢࢫࣆࣥศ⿣࡟௦⾲ࡉࢀࡿࡼ࠺
࡟ࠊ⤖ᬗᑐ⛠ᛶࡢ◚ࢀࢆ཯ᫎࡋࡓ≉␗࡞ࢫࣆࣥ㌶㐨
┦஫స⏝ࡀᅛయࡢ㟁Ꮚ≧ែ࡟ᮏ㉁ⓗ࡞ᙳ㡪ࢆ୚࠼ࡿࡓࡵ࡛࠶ࡿ࡜⪃࠼ࡽࢀࡿࠋࡑࡢࡼ࠺࡞✵㛫཯㌿ᑐ⛠ᛶࡢ◚ࢀ࡟㉳ᅉࡍࡿ≀ᛶࡢ୍ࡘ࡟㠀┦཯㟁Ⲵ㍺㏦⌧
㇟[1]ࡀ࠶ࡿࠋࡇࡢ⌧㇟ࡣ㟁ὶࢆὶࡍྥࡁ࡟ࡼࡗ࡚㟁Ẽ᢬ᢠ್ࡀኚࢃࡿ࡜࠸࠺ࡶࡢ࡛ࠊ㟁ὶ࡟㛵ࡍࡿ஧Ⰽᛶ(ࢲ࢖࣮࢜ࢻ≉ᛶ)࡜ᤊ࠼ࡿࡇ࡜ࡀ࡛ࡁࡿࠋ
ᮏⓎ⾲࡛ࡣࠊࡑࢀࡒࢀ㠃┤᪉ྥࠊ㠃ෆ᪉ྥ࡟✵㛫ᅗ㸯㸬㉸ఏᑟయ PbTaSe2 ࡢ⤖ᬗᵓ㐀཯㌿ᑐ⛠ᛶࡢ◚ࢀࡓᒙ≧໬ྜ≀࡛࠶ࡿ BiTeBr ཬࡧ PbTaSe2 ࡟╔┠ࡋࠊ୕ḟඖࣂࣝࢡ≀㉁࡛㔠ᒓయࡔࡅ࡛
࡞ࡃࠊ㉸ఏᑟయ࡟࠾࠸࡚ࡶึࡵ࡚㠀┦཯㟁Ⲵ㍺㏦⌧㇟ࢆほ ࡍࡿ࡜ྠ᫬࡟ࠊࡑࡢ≉ᚩⓗ࡞᣺ࡿ⯙࠸ࢆ᫂ࡽ࠿࡟ࡋࡓࡇ࡜ࢆ㏙࡭ࡿࠋ
Magneto-chiral anisotropy [1], which is the unidirectional electric transport derived from lattice symmetry
breaking, is investigated in a non-centrosymmetric bulk superconductor PbTaSe2.
First observation of the nonreciprocal charge transport in a 3D non-centrosymmetric superconductor andcharacteristic properties will be discussed.

[1] G. L. J. A. Rikken and P. Wyder, Phys. Rev. Lett. 94, 016601 (2005).

67

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࢖ࣉࢩࣟࣥ㓟໬㕲ࡢ☢Ẽ≉ᛶ࡟࠾ࡅࡿ㔠ᒓ⨨᥮ࡢຠᯝThe effect of metal-substitution on magnetic properties
of epsilon iron oxide⌮Ꮫ⣔◊✲⛉ ໬Ꮫᑓᨷ ኱㉺◊✲ᐊᡤᒓሯᮏ⪷ဢࠊྜྷΎࡲࡾ࠼ࠊ⏕஭㣕㫽ࠊ኱㉺ៅ୍࢖ࣉࢩࣟࣥ㓟໬㕲࡜ࡣࠊ㓟໬㕲ࡀ࡜ࡾ࠺ࡿ࠸ࡃࡘ࠿ࡢ┦(⤖ᬗᵓ㐀)ࡢ࠺ࡕࡢ୍ࡘ࡛࠶ࡾࠊ⮬↛⏺࡟ࡣᏑᅾࡋ࡞࠸┦࡛࠶ࡿࠋ2004ᖺࠊᙜ◊✲ᐊ࡛ࡣࡇࡢ┦ࢆ༢┦ྜᡂࡍࡿࡇ࡜࡟ึࡵ࡚ᡂຌࡋࠊᐊ ୗ࡛
25kOeࢆ㉸࠼ࡿಖ☢ຊࢆᣢࡗ࡚࠸ࡿࡇ࡜࡜ࠊࡑࡢ⤖ᬗᵓ㐀(ᅗ㸯)࡟ࡘ࠸࡚᫂ࡽ࠿࡟ࡋࡓ[1]ࠋࡇࡢಖ☢ຊࡣࠊ㔠ᒓ㓟໬≀୰࡛᭱኱࡛࠶ࡿࡀࠊ⤖ᬗᵓ㐀୰ࡢ㕲ࢧ࢖ࢺࢆ௚ࡢ㔠ᒓ࢖࡛࢜ࣥ⨨᥮ࡍࡿࡇ࡜࡛ࠊಖ☢ຊࢆྵࡴ☢Ẽ≉ᛶࢆไᚚࡍࡿࡇ࡜ࡀ࡛ࡁࡿࡇ࡜ࢆሗ࿌ࡋ࡚࠾ࡾ[2]ࠊ↝ᡂ ᗘࢆኚ໬ࡉࡏࡿࡇ࡜࡟ࡼࡗ࡚ࠊ
ࡑࡢ⢏ᚄࢆᗈ࠸⠊ᅖ࡛ไᚚ࡛ࡁࡿࡇ࡜ࢆሗ࿌ࡋ࡚ࡁࡓ[3]ࠋ
 ᮏ◊✲࡛ࡣࠊࡇࢀࡲ࡛㔠ᒓ⨨᥮ࡢ⾜ࢃࢀ࡚ࡁࡓ◪㓟㕲(III)ࢆฟⓎ≀㉁࡜ࡍࡿࢰࣝ-ࢤࣝἲ࡜ࡣ␗࡞ࡿฟ
Ⓨ≀㉁ࢆ㓟໬Ỉ㓟໬㕲ࢰࣝ࡜ࡋࡓࢰࣝ-ࢤࣝྜᡂἲࢆ⏝࠸࡚ࠊGaࠊTiࠊCoࡢ୕✀ࡢ㔠ᒓ࢖࢜ࣥ࡟ࡼࡾ㕲ࢧ࢖ࢺࢆ⨨᥮ࡋࡓୖ࡛ྜᡂ᮲௳࡟ኚ໬ࢆຍ࠼ࡓ࢖ࣉࢩࣟࣥ㓟໬㕲ࡢྜᡂࢆ┠ᣦࡋࡓࠋࡲࡎฟⓎ≀㉁࡛࠶
ࡿ㓟໬Ỉ㓟໬㕲ࢰࣝ࡟⨨᥮㔠ᒓ(GaࠊTiࠊCo)ࢆྵࡴ໬ྜ≀ࢆຍ࠼ࠊࡑࡇ࡟࢔ࣥࣔࢽ࢔ࢆຍ࠼ࠊ᭱ᚋ࡟࢜
ࣝࢺࢣ࢖㓟ࢸࢺ࢚ࣛࢳࣝࢆຍ࠼ࡿࡇ࡜࡛㓟໬Ỉ㓟໬㕲ࡀࢩ࣐ࣜ࢝ࢺࣜࢡࢫ࡟そࢃࢀࡓ๓㥑యࢆᚓࡓࠋࡑ
ࡋ࡚ࡑࡢ๓㥑యࢆ↝ᡂࡋࠊࢩ࣐ࣜ࢝ࢺࣜࢡࢫࢆỈ㓟໬ࢼࢺ࣒ࣜ࢘Ỉ⁐ᾮ࡟ࡼࡾ㝖ཤࡍࡿࡇ࡜࡛ࠊGaࠊ
TiࠊCo⨨᥮ᆺ࢖ࣉࢩࣟࣥ㓟໬㕲ࢆᚓࡓࠋࡲࡓࠊ↝ᡂᗘ࠾ࡼࡧࢩ࣐ࣜ࢝ࢺࣜࢡࢫ㔞ࢆኚ໬ࡉࡏࡿࡇ࡜࡛

⢏ᚄࡢ␗࡞ࡿヨᩱࢆྜᡂࡋࡓࠋ
ᚓࡽࢀࡓ GaࠊTiࠊCo ⨨᥮ᆺ࢖ࣉࢩࣟࣥ㓟໬㕲ࡣࠊX ⥺ᅇᢡࣃࢱ࣮ࣥࢆ࣮ࣜࢺ࣋ࣝࢺゎᯒࡍࡿࡇ࡜࡟ࡼࡾ༢┦࡛࠶ࡿࡇ࡜ࡀ☜ㄆ࡛ࡁࡓࠋࡲࡓࠊ㏱㐣㟁Ꮚ㢧ᚤ㙾(TEM)࡟ࡼࡿ⢏ᚄほᐹ࡟ࡼࡾࠊࢩ
࣐ࣜ࢝ࢺࣜࢡࢫ㔞ࡀ୍␒ᑡ࡞࠸᮲௳࡛ྜᡂࡋࡓヨᩱ࡛ࡣࠊᖹᆒ⢏ᚄࡀ↝ᡂ ᗘࢆ㧗ࡃࡍࡿࡇ࡜࡟ࡼࡾ 11.8 nm ࠿ࡽ 19.6 nm ࡲ࡛ኚ໬ࡋࠊ≉࡟ 1020 °C ࡛↝ᡂࡋࡓࢧࣥࣉࣝࡣࡑࡢ⢏ᗘศᕸࡀ 24.1%
࡜⊃ࡃ࡞ࡗ࡚࠸ࡓࠋຍ࠼࡚ࠊࢩ࣐ࣜ࢝ࢺࣜࢡࢫ㔞ࢆቑࡸࡍࡇ࡜࡛

cࡑࡢᖹᆒ⢏ᚄࢆ 11.8 nm ࠿ࡽ 10.4 nm ࡲ࡛ไᚚ࡛ࡁࡓࠋࡲࡓࠊ㉸ఏᑟ㔞Ꮚᖸ΅ィ(SQUID)ࢆ⏝࠸ࡓ☢Ẽ ᐃ࡟ࡼࡾ☢Ẽ≉ᛶࢆ☜abᅗ㸯㸬࢖ࣉࢩࣟࣥ㓟໬㕲ࡢ⤖ᬗᵓ㐀ㄆࡋࡓࡢ࡛ేࡏ࡚ሗ࿌ࡍࡿணᐃ࡛࠶ࡿࠋ
[1]J. Jin, S. Ohkoshi, and K. Hashimoto, Adv. Mater. 16 48(2004)[2]S. Ohkoshi, S. Kuroki, S. Sakurai, K. Matsumoto, K. Sato, and S. Sasaki, Angew. Chem. Int. Ed. 46 8392(2007)[3]S. Ohkoshi, A. Namai, K. Imoto, M. Yoshikiyo, W. Tarora, K. Nakagawa, M. Komine, Y. Miyamoto, T. Nasu, S.
Oka, and H. Tokoro, Scientific Reports, 10 14414(2015)

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໬ྜ≀༙ᑟయᇶᯈୖ࡟ᡂ㛗ࡋࡓ Cd3As2 ⷧ⭷ࡢ⤖ᬗᛶ࠾ࡼࡧ㍺㏦≉ᛶࡢホ౯
Crystal structure and transport characterizations of
Cd3As2 thin films grown on compound semiconductor substrates
ᕤᏛ⣔◊✲⛉ ≀⌮ᕤᏛᑓᨷ ᕝ㷂◊✲ᐊ୰⃝భ௓ ,  ᡴ⏣ṇ㍤ ,  す᪩㎮୍ ,  ᑠሯ⿱௓ , ᕝ㷂㞞ྖ
Cd3As2 ࡣ⤖ᬗᵓ㐀ࡀࡶࡘᅇ㌿ᑐ⛠ᛶ࡟⏤᮶ࡋ࡚ࠊࣂࣥࢻ཯㌿ࢆకࡗࡓᏳᐃ࡞ࢹ࢕ࣛࢵࢡ
Ⅼࢆ᭷ࡍࡿࢺ࣏ࣟࢪ࢝ࣝࢹ࢕ࣛࢵࢡ༙㔠ᒓ࡜ࡋ࡚▱ࡽࢀࡿ[1]ࠋࢺ࣏ࣟࢪ࢝ࣝࢹ࢕ࣛࢵࢡ༙
㔠ᒓࡣࣇ࢙࣑ࣝ࢔࣮ࢡ࡜࿧ࡤࢀࡿ≉␗࡞⾲㠃≧ែࢆᣢࡘࡇ࡜࡟ຍ࠼ࠊࢺ࣏ࣟࢪ࢝ࣝ⤯⦕యࢆࡣࡌࡵ࡜ࡍࡿᵝࠎ࡞ࢺ࣏ࣟࢪ࢝ࣝ≀㉁┦࡬㔞Ꮚ┦㌿⛣ࡋᚓࡿẕ≀㉁࡜ࡋ࡚ࡶᮇᚅࡉࢀ
࡚࠸ࡿ[2]ࠋ ࡇࢀࡲ࡛࡟ᡃࠎࡣࠊ䝟䝹䝇䝺䞊䝄䞊ሁ✚ἲ䛸䜻䝱䝑䝥ᒙ䜢⏝䛔䛯ຍ⇕ฎ⌮䜢⤌䜏ྜ䜟䛫䜛䛣䛸䛻䜘䜚䚸䝞䝹䜽༢⤖ᬗ䜢㉸䛘䜛⤖ᬗᛶ䜢᭷䛩䜛㻌 Cd3As2 ⷧ⭷䛾స〇䜢ᐇ⌧䛧䛯[3,4]䚹䛣䛾䜘䛖䛻䛧䛶ᚓ䜙䜜䛯㻌Cd3As2ⷧ⭷䛻䛴䛔䛶䛿䚸ᙉ☢ሙୗ䛻䛚䛡䜛㔞Ꮚ䝩䞊䝹ຠᯝ䛾ほ 䜔㻌Zn䝗䞊䝢䞁䜾䛻䜘䜛䜻䝱䝸䜰ኚㄪ䜢㏻䛨䛶䝞䞁䝗ᵓ㐀䜔⭷ཌ䛻ᑐ䛩䜛ḟඖᛶ䛾ኚ໬䚸䜎䛯䝖䝫䝻䝆䜹䝹┦㌿⛣➼䛾㟁Ꮚᵓ㐀䛾ゎ᫂䜢㐍䜑䛶䛝䛯䚹୍᪉䛷䚸ୖグ䛾ᡂ⭷ᡭἲ䛾ㄢ㢟䛸䛧䛶䚸Cd3As2 ⷧ⭷䛾䜻㻌䝱䝸䜰ᐦᗘ䛜 1 㽢1018 cm-3 ⛬ᗘ䛸䚸䝣䜵䝹䝭‽఩䛜䝕䜱䝷䝑䜽Ⅼ䛛䜙኱䛝䛟㞳䜜䛶䛧䜎䛔䚸䝕䜱䝷㻌䝑䜽Ⅼ㏆ഐ䛻䛚䛡䜛㔞Ꮚ㍺㏦≉ᛶ䜢ホ౯䛩䜛䛣䛸䛜ᅔ㞴䛷䛒䜛䛸䛔䛖䛣䛸䛜䛒䛳䛯䚹䛭䛣䛷䚸䜻䝱䝸䜰ᐦᗘ䜢᭦䛻పῶ䛧䛯㻌 Cd3As2 ⷧ⭷䜢ᚓ䜛䛯䜑䛻䚸᭱㏆䛷䛿໬ྜ≀༙ᑟయᇶᯈ䜢᭷ຠ䛻⏝䛔䜛䛣䛸䜔䚸䜻䝱䝸䜰ቑຍ䛾ཎᅉ䛸䛺䜛㻌AsḞᦆ䜢ᢚ䛘䜛䛯䜑䚸ᡂ⭷୰䛾㻌Asศᅽ䜢኱䛝䛟䛩䜛䛣䛸䛻䜘䜚ᕼⷧ䜻䝱䝸䜰䞉㧗⛣ືᗘ䜢୧❧䛧䛯᭦䛺䜛㧗ရ㉁㻌 Cd3As2 ⷧ⭷䛾స〇䜢┠ᣦ䛧䛶䛔䜛䚹䛣䛾䜘䛖䛺ᡂ⭷ᡭἲ䛾ᨵၿ䜢㔜䛽䜛䛣䛸䛻䜘䜚䚸⌧ᅾ䛷䛿 1 㽢1017 cm-3 ⛬ᗘ䜎䛷䜻䝱䝸䜰ᐦᗘ䛾పῶ䜢㐩ᡂ䛧䛯䚹ࡇࡢࡼ࠺࡟ࡋ࡚ᚓࡽࢀࡓCd3As2ⷧ⭷࡟ࡘ࠸࡚ࠊᡂ㛗᪉఩ࡸ⤖ᬗᛶ࡟㛵ࡍࡿヲ⣽࡞
ホ౯࡜㍺㏦≉ᛶ࡟ࡘ࠸࡚Ⓨ⾲ࢆ⾜࠺ࠋ

[1] Z. Wang et al., Phys. Rev. B 88, 125427 (2013)[2] Z. K. Liu et al., Nat. Mater. 13, 677 (2014)[3] M. Uchida et al., Nat. Commun. 8, 2274 (2018)[4] Y. Nakazawa et al., submitted69

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)H2ࠊ࣐࣊ࢱ࢖ࢺ㸧࡟ὀ┠ࡋࠊ༙ᑟయග㟁ᴟࡢ㛤Ⓨࢆ㐍ࡵ࡚࠸ࡿࠋĮ)H2 ࡣࢥࣛࣥࢲ࣒ᆺ⤖ᬗᵓ㐀ࢆ᭷
ࡍࡿ Q ᆺ㓟໬≀༙ᑟయ࡛࠶ࡾࠊ⣙ H9 ࡢࣂࣥࢻࢠࣕࢵࣉ࢚ࢿࣝࢠ࣮ࢆᣢࡘࡓࡵࠊྍどගᛂ⟅ᆺゐ፹࡜ࡋ࡚᭷ᮃ࡞ೃ⿵ᮦᩱ࡜ᮇᚅࡉࢀ࡚࠸ࡿࠋᡃࠎࡣࠊⷧ⭷ヨᩱస〇ᢏ⾡࡜ࡋ࡚ࣃࣝࢫ࣮ࣞࢨ࣮ሁ✚ἲ㸦3/' ἲ㸧ࢆ⏝࠸ࠊ⤖ᬗᡂ㛗᪉ྥࢆไᚚࡋ࡚ග࢟ࣕࣜ࢔ࡢఏᑟ≉ᛶࢆ᭱㐺໬ࡍࡿࡇ࡜࡟ࡼࡾࠊĮ)H2 ග㟁ᴟ࡟࠾࠸࡚ࠊྍどᇦ࡟࠾࠸࡚ග㟁ὶࡀ኱ᖜ࡟ቑ኱㸦Ȝ QP ࡟࠾࠸࡚ 㸧ࡍࡿࡇ࡜ࢆぢฟࡋࡓࠋࡲࡓࠊ➨୍ཎ⌮㟁Ꮚ≧ែィ⟬࠿ࡽࠊ)H ࡢ୍㒊ࢆ 5K ࡛⨨᥮ࡍࡿࡇ࡜࡟ࡼࡾࠊĮ)H2 ࡢ౯㟁Ꮚᖏୖ➃࡟࠾࠸࡚ࠊ5KG ㌶
㐨࡜ 2S ㌶㐨ࡀΰᡂࡋࠊࣂࣥࢻࢠࣕࢵࣉࡀ⊃✽໬ࡍࡿࡇ࡜ࢆ☜ㄆࡋࡓࠋࡇࡢ 5K ⨨᥮ )H2 ࡟㔠ᚤ⢏Ꮚࢆᇙࡵ㎸ࢇࡔᵓ㐀ࡢග㟁ᴟ࡟࠾࠸࡚ࠊࢠࣕࢵࣉ⊃✽໬࡜ᒁᅾ⾲㠃ࣉࣛࢬࣔࣥࡢຠᯝ࡟ࡼࡾࠊ㏆㉥እග↷ᑕ࡟ࡼࡾỈศゎࢆᘬࡁ㉳ࡇࡍࡇ࡜࡟ᡂຌࡋࡓࠋᮏⓎ⾲࡛ࡣࡇࢀࡽࡢྍど࣭㏆㉥እᇦᛂ⟅ᆺࡢ Į)H2 ග㟁ᴟࡢỈศゎ≉ᛶ࣭ග㟁Ẽ໬Ꮫ≉ᛶ࡟ࡘ࠸࡚ヲ⣽ࢆ⤂௓ࡍࡿࠋࡲࡓᡃࠎࡣ㏆ᖺࠊ஧ẁ㝵ࡢࣃࣝࢫ࣮ࣞࢨ࣮ሁ
✚ἲ࡟ࡼࡾࠊᐊ

ᙉ☢ᛶ࣭6L ⨨᥮ Į)H2 ග㟁ᴟࡢస〇࡟ࡶྲྀࡾ⤌ࢇ࡛࠸ࡿࠋⓎ⾲ᙜ᪥ࡣࠊࡇࡢග㟁ᴟࡢග㟁Ẽ໬Ꮫ≉ᛶ࡜ࡑࡢ☢Ẽ≉ᛶࡢ┦㛵࡟ࡘ࠸࡚ࡶ㆟ㄽࡍࡿࠋ
ㅰ㎡㸸ᮏ◊✲ࡣࠊ⊂❧⾜ᨻἲே᪥ᮏᏛ⾡᣺⯆఍ࡢࠕ◊✲ᣐⅬᙧᡂ஦ᴗ㸦$ඛ➃ᣐⅬᙧᡂᆺ㸧ࠖࡢຓᡂࢆᚓ࡚ᐇ᪋ࡋࡲࡋࡓࠋࡲࡓࠊⷧ⭷ヨᩱࡢ☢໬ᐃࡣࠊᮾி኱Ꮫప

ࢭࣥࢱ࣮ࡢ 648,' ☢໬ᐃ⿦⨨㸦03066㸧ࢆ⏝࠸࡚⾜࠸ࡲࡋࡓࠋࡇࡇ࡟グࡋ࡚ㅰពࢆ⾲ࡋࡲࡍࠋ
>@06HNLDQG+7DEDWD³Correlated Functional Oxides: Nanocomposites and Heterostructures´ 6SULQJHU,QWHUQDWLRQDO3XEOLVKLQJ$*&KDP  &KDSWHU)XQFWLRQDO,URQ2[LGHVDQG7KHLU+HWHURVWUXFWXUHV >@06HNL³Iron Ores and Iron Oxide Materials´ ,Q7HFK2SHQ  &KDSWHU,URQ2[LGH(SLWD[LDO7KLQ)LOPVIRU6RODU(QHUJ\+DUYHVWLQJ >@06HNLHWDO$SSO3K\V([SUHVV  

70

3-
/L ࢖ࣥࢱ࣮࣮࢝ࣞࢺࡋࡓ㟷ࣜࣥࡢ࢚ࣆࢱ࢟ࢩࣕࣝᡂ㛗࡜ࡑࡢ㟁Ẽఏᑟ≉ᛶEpitaxial Growth of Li Intercalated Blue Phosphorus
and Its Electric Transport Property⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ 㛗㇂ᕝ◊✲ᐊᐑෆᜨኴࠊ⛅ᒣ஢ኴࠊ୰すு௓ࠊ㐲⸨⏤኱ࠊ㛗㇂ᕝಟྖ

㏆ᖺࢢࣛࣇ࢙ࣥࢆጞࡵ࡜ࡍࡿ஧ḟඖᒙ≧≀㉁࡟ࡘ࠸࡚ࠊ㧗࠸⛣ືᗘࠊ≉␗࡞እሙᛂ⟅ࠊ㉸ఏᑟࢆ♧ࡍ࡞࡝ࡢ᪂ወ࡞≀ᛶࢆᣢࡘࡇ࡜࠿ࡽ┒ࢇ࡟◊✲ࡀ࡞ࡉࢀ࡚࠸ࡿࠋࣜࣥ࠿ࡽ࡞ࡿ஧ḟඖᒙ≧≀㉁ࡢ୍ࡘ࡜ࡋ
࡚ࡣ armchair ≧ࡢᵓ㐀ࢆᣢࡘ㯮ࣜࣥ(ᅗ 1(a))ࡀ᭷ྡ࡛࠶ࡿࡀࠊ᭱㏆᪂ࡓ࡟ሗ࿌ࡉࢀࡓࡶࡢ࡜ࡋ࡚࣡࢖ࢻ
ࢠࣕࢵࣉཎᏊᒙ༙ᑟయ࡛࠶ࡾࠊࢢࣛࣇ࢙ࣥ࡜ྠࡌࡃࣁࢽ࣒࢝≧ࡢᵓ㐀ࢆᣢࡘ㟷ࣜࣥ(ᅗ 1(b))ࡀὀ┠ࢆ㞟ࡵ࡚࠸ࡿ[1]ࠋ⯆࿡῝࠸ࡇ࡜࡟ࠊLi ➼ࡢ࢔ࣝ࢝ࣜ㔠ᒓࡢࢻࢼ࣮ࢆ 2 ᒙ㟷ࣜࣥ㛫࡟࢖ࣥࢱ࣮࣮࢝ࣞࢺࡉࡏࡿࡇ࡜࡛㌿⛣ ᗘࡀ࠾ࡼࡑ 20K ࡜࠸࠺ 2 ḟඖ㉸ఏᑟయ࡜ࡋ࡚ࡣ㧗 ࡢ㉸ఏᑟࡀⓎ⌧ࡍࡿࡇ࡜ࡀ⌮ㄽⓗ࡟ணࡉࢀ࡚࠸ࡿ[2]ࠋࡋ࠿ࡋ⌧ᅾࡢ࡜ࡇࢁ㟷ࣜࣥ࡟㛵ࡍࡿᐇ㦂ሗ࿌ࡣ STM ࡟ࡼࡿᵓ㐀ࡢᒁᡤほ ࡢࡳ࡛࠶ࡾ
[1]ࠊ㟁Ẽఏᑟ ᐃࡣሗ࿌ࡀ࡞ࡃࠊࡑࡢホ౯ࡀᚅࡓࢀ࡚࠸ࡿࠋ
ᮏ◊✲࡛ࡣ㟁Ẽఏᑟ ᐃ࡟⪏࠼ࡿ኱㠃✚㟷ࣜࣥ༢⤖ᬗࡢస〇࡜ࠊLi ࢖ࣥࢱ࣮࣮࢝ࣞࢩࣙࣥࠊ࠾ࡼࡧ
ࡑࡢ㟁Ẽⓗホ౯ࢆ┠ⓗ࡜ࡋ࡚࠸ࡿࠋࡲࡎ㟷ࣜࣥࡢୗᆅᒙ࡜ࡋ࡚ࠊMBE ἲ࡟ࡼࡾ Si(111)ᇶᯈୖ࡟ Cu ࢆ
160K ࡛⵨╔ࡋ Cu ࢩࣜࢧ࢖ࢻࢆ 7ML ⛬ᗘᡂ㛗ࡉࡏࠊ⥆࠸࡚ Au ࢆ 180K ࡛ 20ML ⛬ᗘ⵨╔ࡍࡿࡇ࡜࡛
Ύί࡞༢⤖ᬗ Au(111)⾲㠃ࢆస〇ࡋࡓࠋࡉࡽ࡟ Au(111)ୖ࡟㯮ࣜࣥࢆཎᩱ࡜ࡋ࡚⵨╔ࡋࠊࡑࡢᚋ࢔ࢽ࣮ࣝ
ࡍࡿࡇ࡜࡛㟷ࣜࣥࢆᚓࡓࠋ⤖ᬗᵓ㐀ࡣ in-situ ࡛ RHEED ࢆ⏝࠸࡚ホ౯ࡋࡓࠋᅗ 2(a), (b)ࡣࡑࢀࡒࢀ௒ᅇస〇ࡋࡓ Au(111)⾲㠃ࠊ㟷ࣜࣥࡢ RHEED ࣃࢱ࣮࡛ࣥ࠶ࡿࠋᡂ㛗 ᗘࡸ࢔ࢽ࣮ࣝ᫬㛫࣭ ᗘ࡞࡝ྛ✀ࣃ࣓࣮ࣛࢱࡢ᭱㐺໬ࢆ⾜࠺ࡇ࡜࡛኱㠃✚ࡢ㧗ရ㉁⭷ࡢస〇࡟ᡂຌࡋࡓࠋㅮ₇࡛ࡣࡉࡽ࡟㟷ࣜࣥᒙ㛫࡟ Li ࢆ࢖ࣥࢱ࣮࣮࢝ࣞࢺࡉࡏࠊࡑࡢ㟁Ẽఏᑟ ᐃࡢ⤖ᯝ࡟ࡘ࠸࡚ࡶ⤂௓ࡋ㆟ㄽࡍࡿࠋ
(a)

(b)

(a)

(b)

ᅗ 1. (a) 㯮ࣜࣥཬࡧ(b)㟷ࣜࣥࡢᅗ 2. (a) Au(111)ཬࡧ(b)㟷ࣜࣥࡢ[11-2]ධᑕࡢ

⤖ᬗᵓ㐀

RHEED ࣃࢱ࣮ࣥ[1] Jia Lin Zhang et al., Nano Lett. 16, 4903-4908 (2016).
[2] Jun-Jie Zhang, Shuai Dong, 2D Mater. 3, 035006 (2016).

71

3-
Pt/Co/Pd/MgO ᵓ㐀࡟࠾ࡅࡿ☢Ẽ␗᪉ᛶ࡟ᑐࡍࡿ㟁⏺ຠᯝࡢᇶᯈ౫Ꮡᛶ

Substrate dependence of electric-field effect on magnetic anisotropy
in Pt/Co/Pd/MgO structuresᮾி኱Ꮫ኱Ꮫ㝔ᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷ༓ⴥ◊✲ᐊ㟁ຊ୰ኸ◊✲ᡤᮾ໭኱Ꮫ
ᯘὒᖹ ᪥ẚ㔝᭷ᒱ ᯇ಴ᩥ♩ ୕㍯୍ඖ ᑠ㔝᪂ᖹ ᖹ஭Ꮥᫀ ᑠᒣ▱ᘯ ኱㔝ⱥ⏨ ༓ⴥ኱ᆅ 

Electric field (EF) effect on magnetic anisotropy (MA) has been intensively studied because of its potential fordramatic reduction in energy consumption of magnetic memory devices. Recently, in the Pt/Co/Pd/MgO system
deposited on a GaAs substrate, strong temperature dependence of EF effect on MA and a huge modulation efficiency
exceeding 1,000 fJV-1m-1 at 10 K have been reported [1]. In this system, EF is applied to the Pd surface in which themagnetic moment is induced because of the ferromagnetic proximity effect. One possible origin of this strong
temperature dependence is a temperature-dependent lattice strain caused by the difference in the thermal expansion
coefficients D between Pd and GaAs substrate, and resultant change in the electronic structure in the Pd. In order toconfirm this internal strain effect on EF effect, we prepared the same system formed on different semiconductor
substrates (GaAs and Si) with different D values and investigated EF
effect on MA at various temperature (T) [2].
Ta (2.5 nm)/Pt (2.4)/Co (0.4)/Pd (1.0)/MgO (2.0) layers from thesubstrate side were deposited on undoped GaAs (001) and Si (001)substrates simultaneously by rf sputtering at room temperature. EF wasapplied to the Pd surface using a polymer film containing an ionicliquid. Fig. 1 (a) and (b) show the gate voltage (V G ) dependence of thechange in the areal MA energy (E K /S) obtained under various T for two
samples, respectively. 'E K /S is defined as the difference between E K /S
at each V G and that at V G = 0 V. As shown in Fig. 1, T dependence ofEF effect is clearly different between two samples. Both samples show/-shaped V G dependence at low T, but the peak position for GaAs andSi samples are located around V G = 0 V and -0.5 V, respectively.
Furthermore, the MA modulation efficiency at 10 K is ~1,300 fJV-1m-1
on GaAs, while that is ~1,800 fJV-1m-1 on Si. These difference are
expected to be related to the difference in internal strain and

Fig.11 : VG dependence of 'E
Fig
EK//S
S at each T

electronic structure of the Pd between two structures.

for Pt/Co/Pd/MgO on (a) GaAs and (b) Si.

This work was partly supported by JSPS KAKENHI and Spintronics Research Network of Japan.
[1] Y. Hibino, et al., App. Phys. Lett. 109, 082403 (2016). [2] Y. Hayashi, et al., App. Phys. Exp. 11 013003 (2018).

72

3-
ಖ࢐Կ෼௔ఽ಍ର季宏室孵季 宻宖宵宻宆宸宒孷季岅層屫岥ޭ༢ً६҈ఈ૮岈൅‫ݡ‬季
Discovery of photoinduced metastable phase in the cuprate
superconductor La2−xSrxCuO4
ཀྵָ‫ڂݜܧ‬Ռ ෼ཀྵָ઒ߊ ౣ໼‫࣪ڂݜ‬-67͗͘͜͠ ౨୉෼੓‫ࢊ ݜ‬૱‫ ݜ‬ఁԻιϱνʖ ‫֋ڂݜ‬൅෨໵
୰Ӎ ޼ঞ ഩ ֋ਕ নӮ ཾ༐'RQJMRRQ6RQJ Ӯ࡜ ༺ ౣ໼ ྆
௔୻ϏϩηϪʖδʖٗढ़͹൅ఴͶΓΕ෼࣯Ν௔߶ଐͶྯًͪ͢ࡏ͹ξ΢ψϝέηΏޭ༢ً૮఺ҢͶͯ͏ͱ͹‫ۛ͗ڂݜ‬೧੟ΞͲ͍Ζɽ஦Ͳ΍ɼಖ࢐Կ෼௔ఽ಍ରͶ͕͏ͱޭྯًͶΓΕ௔ఽ಍఺ҢԻౕҐ৏Ͳ௔ఽ಍͗෰‫ͤ׈‬Ζޭ༢ً௔ఽ಍ͺ୉͘͵஭໪ΝॄΌͱ͏Ζ>@ɽຌ‫Ͳڂݜ‬ͺɼಖ࢐Կ෼௔ఽ಍ର͹ͽ
ͳͯͲ͍Ζ/Dʷ[6U[&X2 [  Ͷ஥໪͢ɼۛ੼֐ޭͲ F ࣢๏޴Ͷ‫ࡏًͪ͢ྯ͚ک‬͹৾Ζ෥͏Νޭϛϱϕτϧϖϩςൕࣻϕϫʖϔ෾ޭͶΓΕ௒΄ͪʤਦʥɽͨ͹݃Վɼޭྯً‫ޛ‬Ͷ६҈ఈదͶଚࡑͤΖ৿ͪ͵૮͹ଚࡑΝ‫ݡ‬ड़ͪ͢>@ɽਦͶࣖͤ͹ͺɼ/Dʷ[6U[&X2͹௔ఽ಍఺ҢԻౕҐԾͶ͕͜Ζฑߩয়ସ͹ F ࣢๏޴͹ൕིࣻͳޭྯً
ͪ͢ࡏ͹ൕིࣻ͹࣎ؔรԿ͹༹ࢢͲ͍Ζɽฑߩয়ସͲͺɼ௔ఽ಍ΫϡϨΠ͗௔ఽ಍૜ͳઊԓ૜͹੷૜๏޴ͶζϥιϓλϱްՎͲαϐʖϪϱφͶҢಊͤΖζϥιϓλϱϕϧθϜ‫ڠ‬໒ʤ-35ʥ͗ਫ਼ͣɼͨ͹ಝ௅ద͵ϕϧθϜΦρζ͹ߑଆ͗‫͏ͱ͓ݡ‬ΖɽҲ๏ͲɼP-FP ͹‫ًͤྯͲޭ֐੼ۛ͏ک‬Ζͳɼ-35͹ϕϧθϜΦρζ͗ͯͶ෾࿀͢ɼ͠ΔͶͨ͹য়ସ͗SVҐ৏΍࣍କ͢ͱ͏Ζ͞ͳ֮͗೟Ͳ͘ΖɽߪԍͲͺɼ͞͹६҈ఈదͶ‫ݳ‬ΗΖ૮͹ً‫ݱ‬Ͷͯ͏ͱɼմੵ݃ՎͳϠυϩͳ͹ർֳ͖Δയͮͱ͏͚ɽ

Reflectivity

1.0
0.8

equil.
-5 ps
3
14.4
40
100
350

0.6
0.4
0.2
0.0
2

5K
3.6 mJ/cm

24
68
Energy (meV)10ਦ ɿޭϛϱϕτϧϖϩςൕࣻϕϫʖϔ෾ޭ͹ਦ ɿ. Ͷ͕͏ͱɼP-FP Ͳޭྯًͪ͢

ໝࣞਦɽ‫ޛ‬͹ F ࣢๏޴ൕིࣻ͹࣎ؔรԿ͹༹ࢢɽ[1] D. Fausti et al., Science 331, 189 (2011).
[2] D. Nicoletti et al., Phys. Rev. B 90, 100503(R) (2014).
[3] K. Tomari et al., arXiv:1712.05086 (2017).

73

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Geometrical effect on spin accumulation signals in a diode structure
fabricated on Si substrate᧲੩ᄢቇᎿቇ♽⎇ⓥ⑼ 㔚᳇♽Ꮏቇኾ᡹ ↰ਛ࡮ᄢ⍫࡮ਛᩮ ⎇ⓥቶ૒⮮ᓆ৻‫ޔ‬ਛᩮੌ᣽‫ޔ‬⠀↰ፏੱ‫↰ޔ‬ਛ㓷᣿

'V 3TH ( H )Magnetic field H

The three-terminal Hanle (3TH) measurement has been frequently used to estimate the spin lifetime W S insemiconductors and the spin injection polarization P in ferromagnet(FM)/insulator(I)/semiconductor(SC) tunnel
junctions.[1] However, little attention has been paid to the fact that 3TH signals are affected by the device structure
when its electrode size or channel thickness are comparable to the spin diffusion length OS .[2-5] Therefore, thedevice structure must be carefully considered to understand the spin physics more precisely.
Figure 1(a) shows our FM/I/Si tunnel junction device structure examined in (a) I
Al (160 nm)
this study. Universal representation of the 3TH signals[5] 'V 3TH observed inV
Mg (1 nm)Fe (3 nm)such vertical devices can be written by integrating the impulse response injectedMg (1 nm)
at a position r and detected at another position r ' over the junction area A;
SiO N (~0.5 nm)ª § r 'r·ºdAdA
Re «exp¨¨ 
1  iJHW S ¸¸» , (1)P 2 JUOS ³³ ³³
A rA 2SOS r 'r
r 'A
¹¼»
¬« © OS3T

xyn+ Si (675 ȝm)Al (50 nm)(b) Sample A

Sample B

Sample C

where H is the magnetic field applied perpendicular to the injected spins, J is the2 ȝmcurrent density, U is the channel resistance, and J is the gyromagnetic ratio. In
5.6 ȝm180 ȝmderiving Eq. (1), it was assumed that J is uniform over the junction area. Eq.
17.8 ȝm
(1) indicates that, as A decreases, the amplitude of a 3TH signal decreases and its Fig. 1 (a) Device structure andlinewidth broadens. Although true P and W S can be estimated by fitting Eq. measurement setup. (b) Shapes
and size of the spin injection(1) to the data, it is not easy since numerical calculation is needed. Thus, as aelectrode.
fitting function, it is practically convenient to use the following
Sample A
Sample B
Sample C
conventional equation;222( P*) 2 JUOS(2)

J = 40 ȝA/ȝm
4K

(a)
10
ǻV (ȝV)'V 3TH ( H )1  1  (JHW S *) 2 ,2  2(JHW S *) 2

J = 42 ȝA/ȝm
4K(b)

J = 40 ȝA/ȝm
4K(c)

and then to convert the obtained P* and W S * to P and W S ,respectively, using conversion factors P * / P and W S * / W S which canbe numerically calculated from Eq. (1). Note that Eqs. (1) and (2) are
Ĳ*=4.2ns
Ĳ*=7.1ns
Ĳ*=2.9ns
identical when A is large enough, in that case, P * / P W S * / W S 1 .
0
P*=13.4%
P*=15.2%
P*=16.5%
To experimentally verify the above discussion, we investigatedí100 0100 í100 0
100 í100 0
100
H (Oe)
H (Oe)
H (Oe)
3TH signals observed in FM/I/Si junctions having a Fe/Mg/SiOxNy/n+Si
Fig. 2 (a-c) 3TH signals observed in
injector electrode with various shapes.[6] Our measurement setup is
Sample A-C (red lines). Black curves
2
shown in Fig. 1(a), where J = 4042 ȝA/ȝm is applied from the top
are fitting by Eq. (2).
electrode to the substrate in the spin extraction regime with sweepingH 7KUHHW\SHVRIVKDSHVZHUHSUHSDUHG6DPSOH$FLUFOHZLWKȝPLQGLDPHWHU6DPSOH%  UHFWDQJOHZLWK
2×180 ȝP 2DQG6DPSOH&FLUFOHZLWKȝPLQGLDPHWHU shown in Fig. 1(b)). Figs. 2(a-c) (red curves) show
3TH signals at 4K. By fitting Eq. (2), we obtained P * = 16.5, 15.2, and 13.4%, and W S * = 7.1, 4.2, and 2.9 ns,
for Sample A, B and C, respectively. Using the conversion factor, true P and W S are estimated; P = 17.4, 17.9,
and 16.8%, and W S = 7.8, 6.5, and 3.9 ns, for Sample A, B and C, respectively. Since variation of P and W S
values are smaller than that of P * and W S * , our proposed method is valid to estimate true P and W S .
.
[1] T. Sasaki et al., IEEE Trans. Magn. 46 (2010). [2] A. Fert and H. Jaffrés, PRB 64 (2001). [3] Y. Takamura
et al., JAP 117 (2015). [4] A. Tiwari et al., JJAP 56 (2017). [5] S. Sato et al., PRB 96 (2017). [6] T. Hada etal., JSAP Fall Meeting 2016. This work was partially supported by Grants-in-Aid for Scientific Research(including (B)) and Spintronics Research Network of Japan (Spin-RNJ).

74

3-
(Nd1-xPrx)2Ir2O7ࡢࣔࢵࢺ⮫⏺Ⅼ㏆ഐ࡟࠾ࡅࡿ
࣮࣍ࣝࢻ࣮ࣆࣥࢢຠᯝ
The effect of hole doping nearby quantum critical point on(Nd1-xPrx)2Ir2O7
ᮾ኱ᕤA㸪-67ࡉࡁࡀࡅBᇸ⋢኱⌮Cࠊ⌮◊CEMSD㔠Ꮚ❳㤿A㸪ୖ⏣೺ኴ㑻A㸪ရᒸᐶCࠊ᭷⏣ுኴ㑻Dࠊ⸨ᒸ῟A,B㸪༑಴ዲ⣖A,Dࣃ࢖ࣟࢡࣟ࢔ᆺ࢖ࣜࢪ࣒࢘㓟໬≀R2Ir2O7 (R=Lu-Pr)ࡣࠊ㠀ඹ⥺ⓗ☢Ẽᵓ㐀㸦All-in-all-outᵓ㐀㸧ࡸࢺ࣏ࣟࢪ༙࢝ࣝ㔠ᒓ┦ࡢほⅬ࠿ࡽ㛵ᚰࡀᣢࡓࢀ࡚࠸ࡿ≀㉁࡛࠶ࡿࠋR2Ir2O7ࡣࠊᕼᅵ㢮࢖࢜ࣥRࢆ⨨᥮ࡍࡿࡇ࡜
࡛ࠊ୍㟁Ꮚࣂࣥࢻᖜไᚚᆺࡢࣔࢵࢺ㌿⛣ࢆไᚚࡍࡿࡇ࡜ࡀྍ⬟࡛ࠊPr2Ir2O7 ࡣࠊࣔࢵࢺ㌿⛣㏆ഐ࡟࠶ࡾࠊ
ࣇ࢙࣑ࣝ‽఩௜㏆࡛ఏᑟᖏ࡜౯㟁Ꮚᖏࡀ୍Ⅼ࡛᥋ࡍࡿ“Quadratic
band touching”(QBT)ࢆ᭷ࡍࡿ“ࢮࣟࢠࣕࢵࣉ༙㔠ᒓ”࡛࠶ࡿࡇ࡜ࡀ
▱ࡽࢀ࡚࠸ࡿ[1]ࠋQBT ࡣࠊ࣡࢖༙ࣝ㔠ᒓ┦࡜ࡢ㛵㐃[2]ࡸ᪂ወ࡞
㔞Ꮚ⮫⏺Ⅼ[3]࡜࠸ࡗࡓほⅬ࠿ࡽࠊ㏆ᖺὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋ
௒ᅇᡃࠎࡣࠊQBT ࡀ R2Ir2O7 ࡢ≀ᛶ࡟ᯝࡓࡍᙺ๭ࢆ᫂ࡽ࠿࡟ࡍ
ࡿࡓࡵࠊPr2Ir2O7 ࡢ⇕㟁ຠᯝ࡟ࡘ࠸࡚ㄪ࡭ࠊ㠀༢ㄪ࡞ᗘ౫Ꮡᛶࢆ᭷ࡍࡿࠊ኱ࡁ࡞ࢮ࣮࣋ࢵࢡಀᩘࢆほ ࡋࡓࠋࡲࡓࠊ࣮࣍ࣝࢻ࣮
ࣉ࡟ࡼࡗ࡚ࣇ࢙࣑࢚ࣝࢿࣝࢠ࣮ࢆኚ໬ࡉࡏࡿ࡜ࠊࢮ࣮࣋ࢵࢡಀᩘ
ࡢ᣺ࡿ⯙࠸ࡶ⣔⤫ⓗ࡟ኚ໬ࡍࡿࡇ࡜ࡀ☜࠿ࡵࡽࢀࡓࠋ᭦࡟ࠊᚓࡽ
ࢀࡓ᣺ࡿ⯙࠸ࡀ R2Ir2O7 ࡢ㔠ᒓ┦࡟≉᭷࡞ࡶࡢ࡛࠶ࡿࡇ࡜ࢆ᳨ドࡍࡿࡓࡵࠊࣔࢵࢺ⮫⏺Ⅼ┤ୗࡢ⤌ᡂ(Nd0.2Pr0.8)2Ir2O7ࠊࣔࢵࢺ⤯⦕
య Eu2Ir2O7 ࡟࠾࠸࡚ࡶྠᵝࡢ ᐃࢆ⾜ࡗࡓᮏⓎ⾲࡛ࡣࠊࡇࢀࡽࡢ⤖ᯝ࡟ࡘ࠸࡚ሗ࿌ࡍࡿࠋ

ᅗ(a) (Pr1-xCax)2Ir2O7 ࡢ᢬ᢠ⋡ᗘ౫Ꮡᛶࠋ(b)ࢮ࣮࣋ࢵࢡಀᩘ

ᗘ౫

Ꮡᛶࠋ

[1] T. Kondo et al., Nat. Commun. 6, 10042 (2015)[2] M. Hirschberger et al., Nat. Mater. , 15 1161 (2016)[3] L. Savary et al., PRX 4, 041027 (2014)

75


STS Study of Graphene Zigzag Nano-ribbons
1

Department of Physics, The Univ. of Tokyo, 2Cryogenic Research Center, The Univ. of Tokyo
Andre E. B. Amend1, Tomohiro Matsui1, Hiroshi Fukuyama1,2Graphene is a sheet consisting of a two-dimensional honeycomb lattice of carbon atoms. At a zigzag (zz) type edge,graphene hosts an electronic localized state (zz-ES) that causes a peak in the local density of states (LDOS) at the
Dirac point, the Fermi energy (EF) in undoped materials [1-2]. In narrow graphene nano-ribbons (GNR) with zz edges,
the zz-ESs are expected to be spin polarized along each edge and have opposite spin directions on different edges.
This antiferromagnetic configuration is expected to split the LDOS peak, where the peak separation increases withdeceasing ribbon width due to increasing inter-edge interaction. If the spins on both edges align in the same direction
by applying magnetic fields, the splitting will disappear. In addition to the edge states, GNRs can feature an energy
gap due to quantum confinement. The gap amplitude increases with decreasing ribbon width, but should be insensitive
to the magnetic field. Previous measurements of the spin polarized zz-ESs [3-5] are not consistent with each other,and its experimental verification is still left unsettled.
In this study, the LDOS on zz-GNRs were studied by scanning tunneling(a)microscopy and spectroscopy (STM/S) at temperatures down to 2 K and inhigh magnetic fields up to 13 T. Zz-GNRs were fabricated on a graphite
surface by hydrogen plasma etching [6]. Figure (a) and the inset show theheight profile, respectively. In Fig. (b), we show typical dI/dV spectra taken
at B = 0 and 12 T on the upper edge of the ribbon. At B = 0 T, several distinct
peaks are seen around EF (V = 0), while no peaks and a single prominent

STM image of a zz-GNR of monatomic height and 12.5 nm width and its







  

peak are observed on a much wider terrace and an isolated zz edge,
respectively (not shown here). The steep dI/dV suppression near −50 mV(b)

be a spin split zz-ES. By applying a magnetic field of 12 T, the double peakstructure is modified. Note that small periodic peaks appeared at V  30
mV are those caused by Landau quantization. Further analyses and"%$

Within the gap structure, there are two peaks at −10 and 10 mV which could  



!! "&&&#

 

  
      discussions of these preliminary data will be given.

 $!

accompanied by the two broad peaks at −60 and 35 mV are assigned to a
structure caused by the quantum confinement (horizontal bar in Fig. (b)).



   # $



[1] M.Fujita, et al., J. Phys. Soc. Jpn. 65, 1920 (1996).

[4] G.Z.Magda, et al., Nature 514, 608 (2014).

[2] Y.Niimi, et al., Appl. Surf. Sci. 241, 43 (2005).

[5] M.Ziatdinov, et al., Phys. Rev. B 87, 115427 (2013).

[3] C.Tao, et al., Nat. Phys. 7, 616 (2011).

[6] T. Matsui, et al., to appear.

76

3-
Magnetochiral Hall effect in a 2D trigonal superconductorᕤᏛ⣔◊✲⛉≀⌮ᕤᏛᑓᨷ ᒾబ◊✲ᐊ ᯈᶫ ຬ㍤ᩪ⸨ ඃ஭ᡭୖ ᩄஓᒾబ ⩏ᏹ㑄⛣㔠ᒓࢲ࢖࢝ࣝࢥࢤࢼ࢖ࢻ(TMD)ࡣࡑࡢᒙ≧ᛶ࠿ࡽ༢ᒙ࡟ࡲ࡛๼㛤ࡀྍ⬟࡛࠶ࡿࡓࡵࠊ2 ḟඖ㉸ఏᑟࡸ࢜ࣉࢺࣂ࣮ࣞࢺࣟࢽࢡࢫ࡞࡝ᵝࠎ࡞ศ㔝࡛ὀ┠ࢆ㞟ࡵ࡚࠸ࡿࠋ༢ᒙTMD ࡢ㔜せ࡞ᛶ㉁࡜ࡋ
࡚ࠊ3ᅇᑐ⛠ᛶࡀᣲࡆࡽࢀࡿࠋTMDࡢᵓ㐀ᘧࡣMX2࡛࠶ࡾ(Mࡣ㑄⛣㔠ᒓཎᏊࠊXࡣ࢝ࣝࢥࢤࣥཎᏊ)ࠊ
༢ᒙ࡟ࡘ࠸࡚1ࡘࡢMཎᏊࡀ2ࡘࡢXཎᏊ࡟ᣳࡲࢀࡓᙧ࡛඲య࡜ࡋ࡚ Aࢧ࢖ࢺ࡜Bࢧ࢖ࢺࡀ㠀➼౯࡞ࣁࢽ࣒࢝᱁Ꮚࢆ࡞ࡋ࡚࠸ࡿ(ᅗ 1)ࠋࡑࡢ⤖ᯝࠊ༢ᒙTMDࡣ3ᅇᑐ⛠ᛶࢆᣢࡘࠋMoS2ࡣࡑࡢTMD࡟ᒓࡋࠊ㟁Ẽ஧㔜ᒙࢺࣛࣥࢪࢫࢱᵓ㐀ࢆ⏝࠸ࡿࡇ࡜࡛⾲㠃1 ᒙ࡟㉸ఏᑟࢆㄏ㉳ࡍࡿࡇ࡜ࡀ࡛ࡁࡿࠋᮏ◊✲࡛ࡣࠊ㟁⏺ㄏ㉳㉸ఏᑟMoS2࡟࠾ࡅࡿ3ᅇᑐ⛠ᛶ࡟㉳ᅉࡍࡿ⌧㇟࡛࠶ࡿ㠀⥺ᙧ㍺㏦⌧㇟࡟╔┠ࡋࠊࡑࢀࢆ
᢬ᢠࡢಸ࿘Ἴࣟࢵࢡ࢖ࣥACᐃ᳨࡛ฟࡋࡓࠋࡑࡋ࡚ࠊ㟁ὶࡢ⤖ᬗ࡟ᑐࡍࡿ᪉఩࡜㠀⥺ᙧࢩࢢࢼࣝࡢ᪉

ྥ࡜ࡢ㛵ಀࢆ᫂ࡽ࠿࡟ࡋࡓࠋ
᢬ᢠࡀ㟁ὶࡢྥࡁ࡟౫ࡿ࡜࠸࠺㠀⥺ᙧᛶࡣࠊ㟁ὶࡀ zigzag ᪉ྥ࡜ᖹ⾜࡞ሙྜࡢ MoS2 ࡢ⦪᢬ᢠᡂศ࡟ࡘ࠸࡚ሗ࿌ࡉࢀ࡚
࠸ࡿ[1]ࠋ୍᪉ࠊᮏ◊✲࡛ࡣࠊ㟁ὶࡀ armchair᪉ྥ࡜ᖹ⾜࡞ሙྜࡢ࣮࣍ࣝ᢬ᢠᡂศ࡟ࡘ࠸
࡚ࡶྠࡌࡼ࠺࡞᣺ࡿ⯙࠸ࡀぢࡽࢀࡿࡇ࡜ࢆⓎぢࡋࡓࠋࡲࡓࠊࡇࡢ࡜ࡁࠊ⦪᢬ᢠ࡟ࡘ࠸࡚
ࡢࢩࢢࢼࣝࡣほࡉࢀ࡞࠿ࡗࡓࠋࡇࢀࡽࡢ

≉␗࡞᣺ࡿ⯙࠸ࡣࠊ㠀⥺ᙧࢩࢢࢼࣝࡀ 3 ᅇᑐ⛠ࡢ⤖ᬗ࣏ࢸࣥࢩࣕࣝ࡟㉳ᅉࡋ࡚࠸ࡿࡇ

ᅗ 1. MoS2 ࡟࠾ࡅࡿ 2 ✀㢮ࡢ᪉఩࡜ࢆ♧၀ࡋ࡚࠸ࡿࠋ

[1] R. Wakatsuki et al. Sci. Adv. 3, e1602390 (2017)

77

3
%L6Eࢺ
ࢺ࣏ࣟࢪ࢝ࣝ⤯⦕య୰㌿఩ࡢ㟁Ẽⓗᛶ㉁Electrical properties of dislocations in Bismuth-Antimony topologicalinsulatorsᕤᏛ⣔◊✲⛉࣐ࢸࣜ࢔ࣝᕤᏛᑓᨷᯞᕝ࣭ᚨᮏ◊✲ᐊ℈ᓮᣑࠊᚨᮏ᭷⣖ࠊᯞᕝᆂ୍ ୕ḟඖࢺ࣏ࣟࢪ࢝ࣝ⤯⦕యࡣࠊෆ㒊ࡣ⤯⦕య࡛࠶ࡿࡀࠊ⾲㠃࡟࠾࠸࡚ࡣ≉Ṧ࡞ᑟ㟁ᛶࢆ♧ࡍࣘࢽ࣮ࢡ
࡞≀㉁࡛࠶ࡿࠋࡇࡢ⾲㠃ࡢఏᑟ≧ែࡣࠊࠗࢺ࣏ࣟࢪ࣮࠘࡜࿧ࡤࢀࡿᩘᏛⓗ࡞ᵓ㐀࡟ࡼࡗ࡚ಖㆤࡉࢀ࡚࠾ࡾࠊ
㧗࠸࢟ࣕࣜ࢔⛣ືᗘࢆᣢࡘࠊ㟁Ꮚࢫࣆࣥࡀ㐠ື᪉ྥ࡟ᛂࡌ࡚ᅛᐃࡉࢀ࡚࠸ࡿ࡞࡝ࡢᛂ⏝࡟᭷฼࡞ᛶ㉁ࢆ
᭷ࡋ࡚࠸ࡿࠋ㏻ᖖࡢ୕ḟඖ⤖ᬗ࡟ࡣࠊ㌿఩࡜࿧ࡤࢀࡿ୍ḟඖࡢ᱁ᏊḞ㝗ࡀᑟධࡉࢀ࡚࠸ࡿࡀࠊࢺ࣏ࣟࢪ
࢝ࣝ⤯⦕య⤖ᬗ୰ࡢࡇࡢ᱁ᏊḞ㝗ࡀ࠶ࡿ᮲௳ࢆ‶ࡓࡍ᫬ࠊࡇࢀ࡟ἢࡗ࡚ࠊ⾲㠃࡜ఝ㏻ࡗࡓ≉Ṧ࡞ఏᑟ≧ែࡀ⌧ࢀࡿࡇ࡜ࡀࠊ⌮ㄽⓗ࡟ண ࡉࢀ࡚࠸ࡿ[1]ࠋࢺ࣏ࣟࢪ࢝ࣝ⤯⦕యࡢఏᑟ≧ែ࡛ࡣ᏶඲ᚋ᪉ᩓ஘㸦㐠ື᪉ྥࢆ 180ᗘኚ࠼ࡿᩓ஘㸧ࡀ⚗Ṇࡉࢀ࡚࠸ࡿࡀࠊ⾲㠃࡟⌧ࢀࡿ≧ែࡣ஧ḟඖࡢఏᑟ≧ែ࡛࠶ࡿࡓࡵࠊ
ࡑࡇࢆὶࢀࡿ࢟ࣕࣜ࢔ࡣ 180ᗘ࡛࡞࠸ゅᗘ࡛ᩓ஘ࡉࢀᚓࡿࠋࡇࢀ࡜ẚ㍑ࡋ࡚ࠊ㌿఩࡟ἢࡗ࡚⌧ࢀࡿ࡜ࡉࢀࡿ≧ែࡣ୍ḟඖ࡛࠶ࡿࡓࡵࠊ࢟ࣕࣜ࢔ࡀᙎᛶᩓ஘ࢆཷࡅࡿࡇ࡜ࡢ࡞࠸⌮᝿ⓗ࡞㔞Ꮚ࣡࢖࣮ࣖ࡜ࡋ࡚᣺
ࡿ⯙࠺ࡶࡢ࡜⪃࠼ࡽࢀࡿࠋࡇࡢࡼ࠺࡞ᛶ㉁ࢆ฼⏝ࡋ࡚ࠊ⇕㟁ኚ᥮ᛶ⬟ࡢ኱ᖜ࡞ᨵၿ࡞࡝࡬ࡢᛂ⏝ࡀᮇᚅࡉࢀ࡚࠸ࡿ[2]ࠋ ᮏ◊✲࡛ࡣࠊᐇ㝿ࡢࢺ࣏ࣟࢪ࢝ࣝ⤯⦕య⤖ᬗ୰࡟ࠊࢺ࣏ࣟࢪ࢝ࣝ࡟ಖㆤࡉࢀࡓ୍ḟඖఏᑟ≧ែࡢᙧᡂ᮲௳ࢆ‶ࡓࡍ㌿఩ࡀᑟධࡉࢀࡿࡇ࡜ࠊ࠾ࡼࡧᑟධࡉࢀࡓ㌿఩࡟ἢࡗ୍࡚ḟඖఏᑟ≧ែࡀᙧᡂࡉࢀࡿࡇ࡜ࡢᐇドࢆ┠ⓗ࡜ࡋ࡚࠸ࡿࠋ᮲௳ࢆ‶ࡓࡍ㌿఩ࡀᑟධࡉࢀᚓࡿࢺ࣏ࣟࢪ࢝ࣝ⤯⦕య࡜ࡋ࡚ࠊࣅࢫ࣐ࢫ࢔ࣥ
ࢳࣔࣥࢆ㑅ᢥࡋࠊస〇ࡋࡓ⤖ᬗ࡟ረᛶኚᙧࢆ᪋ࡍࡇ࡜࡟ࡼࡗ࡚㌿఩ࢆᑟධࡋࡓࠋᑟධࡉࢀࡓ㌿఩ࡀ᮲௳ࢆ‶ࡓࡍ࠿ྰ࠿ࢆࠊ㏱㐣ᆺ㟁Ꮚ㢧ᚤ㙾(TEM)ࢆ⏝࠸࡚ㄪ࡭ࡓࠋࡑࡢ⤖ᯝࠊኚᙧ᪉఩ࢆᕤኵࡍࡿࡇ࡜࡛ࠊ᮲
௳ࢆ‶ࡓࡍ㌿఩ࡀ㠀ᖖ࡟㧗ᐦᗘ࡟ᑟධࡉࢀࡿࡇ࡜ࡀ☜ㄆࡉࢀࡓ[3]ࠋࡲࡓࠊ⤖ᬗ୰ࡢ㌿఩ࡢ⛣ື㏿ᗘࡢ㐪࠸࠿ࡽࠊ᮲௳ࢆ‶ࡓࡍ㌿఩ࡢ㛗ࡉࡣࠊࡽࡏࢇ㌿఩ࡼࡾࡶล≧㌿఩ࡢ᪉ࡀ኱ࡁࡃ࡞ࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋࡑ
ࡢࡓࡵࠊล≧㌿఩࡟ἢ࠺ࡼ࠺࡞᪉ྥ࡟㟁ὶࢆὶࡋࠊఏᑟ㌿఩ࡢᑟධ࡟ࡼࡿ㟁Ẽ᢬ᢠࡢኚ໬ࢆㄪ࡭ࡓࠋࣅ
ࢫ࣐ࢫ࢔ࣥࢳࣔࣥࡣࣂࣥࢻࢠࣕࢵࣉ
ࡀᩘ༑࣑࢚ࣜࣞࢡࢺࣟࣥ࣎ࣝࢺ࡜ᑠࡉࡃࠊᐊ௜㏆࡛ࡣ༙㔠ᒓ࡟㏆࠸㟁Ẽఏᑟᛶࢆᣢࡘࡓࡵࠊ
ࣂࣝࢡ࡜ఏᑟ㌿఩ࡢఏᑟᛶࢆ༊ูࡍࡿࡓࡵ࡟ࡣప
ᐃࢆ⾜࠺ᚲせࡀ࠶ࡿࠋ
ప

࡛

ࢭࣥࢱ࣮

ࡢ PPMSࢆ⏝࠸ࠊ300K࠿ࡽ 2Kࡲ࡛
ࡢ⠊ᅖ࡛ᐃࢆ⾜ࡗࡓࠋ

ረᛶኚᙧ࡟ࡼࡗ࡚ࣅࢫ࣐ࢫ࢔ࣥࢳࣔࣥ୰࡟ᑟධࡉࢀࡓ㌿఩࣮ࣝࣉࡢ TEMᬯど㔝ീࠋᕥࡣࢍൌͲͳͳࠊྑࡣࢍ ൌ Ͳͳͳതࡢ࡜ࡁࠋ

[1] Y. Ran et al., Nat. Phys. 5 (2009) 298.
[2] O. A. Tretiakov et al., Appl. Phys. Lett. 97 (2010) 073108 .
[3] H. Hamasaki et al., Appl. Phys. Lett. 110, 092105 (2017)

78

P-
ᑠᆺ㉸ప 㐃⥆෭෾ࢩࢫࢸ࣒ࡢ㛤Ⓨ II
Development of a Compact and Continuous Sub-mK Refrigerator IIపప ࢭࣥࢱ࣮ඹྠ฼⏝㒊㛛 $ࠊ⌮Ꮫ㒊≀⌮Ꮫ⛉ %ࠊ
ࢭࣥࢱ࣮◊✲㛤Ⓨ㒊㛛 &ࠊ⌮Ꮫ⣔◊✲⛉≀⌮Ꮫᑓᨷ⚟ᒣ◊ 'ᡞ⏣ு $ࠊ℧ᮏ⩧ᖹ %ࠊ᳜ᯇ♸┿ %ࠊᮧᕝᬛ &ࠊ⚟ᒣᐶ &'⇕ᦂࡽࡂࡀపῶࡉࢀࠊ≀㉁ᅛ᭷ࡢᛶ㉁ࡀ㢧ᅾ໬ࡍࡿప

⎔ቃࡣࠊ㧗ឤᗘィࡸ᪂ወ࡞≀⌮⌧㇟ࡢ᥈⣴࡜ゎ᫂࡟᭷⏝࡛࠶ࡿࠋ௒᪥࡛ࡣ⮬ື㐠㌿ྍ⬟࡞ᕼ㔘෭෾ᶵࡀᬑཬࡋࠊᖜᗈ࠸ศ㔝࡛ 10–20 mK ⛬ᗘࡲ࡛ࡢᴟప⎔ቃࢆ฼⏝ࡋࡓ◊✲ࡀ⾜ࢃࢀ࡚࠸ࡿࠋࡋ࠿ࡋࠊࡉࡽ࡞ࡿప

࡛࠶ࡿ㉸ప⎔ቃ㸦1 mK ௨ୗ㸧ࡣࠊࡇࢀࢆᐇ⌧ࡍࡿ㖡᰾᩿⇕ᾘ☢෭෾ᶵࡀ኱ࡀ࠿ࡾ࡛ࠊタ⨨㐠⏝ࢥࢫࢺࡀ㧗࠸ࡇ࡜ࡀࢿࢵࢡ࡜࡞ࡾࠊࡑࡢ฼
⏝ࡀ୍㒊ࡢᑓ㛛ศ㔝ࡢࡳ࡟㝈ࡽࢀ࡚࠸ࡿࠋࡇࡢ㞀ቨࢆྲྀࡾᡶ࠸ࠊ㉸ప⎔ቃࡢᬑཬ࡟ࡼࡿ⛉Ꮫ◊✲ࡢ㐍ᒎ࡟ᐤ୚ࡍࡿࡓࡵࠊᡃࠎࡣࠊ᪤Ꮡࡢᕼ㔘෭෾ᶵ࡟ࡑࡢࡲࡲᦚ㍕ྍ⬟࡞ࢧ࢖ࢬ࡛ࠊ1 mK ᙅࡲ࡛ࡢ௵ពࡢ
ᗘࢆ㐃⥆Ⓨ⏕ྍ⬟࡞ࠕᑠᆺ㉸ప㐃⥆෭෾ࢩࢫࢸ࣒ࠖࡢ㛤Ⓨࢆ㐍ࡵ࡚࠸ࡿ [1]ࠋᮏࢩࢫࢸ࣒࡛ࡣࠊ☢Ẽసᴗ≀㉁࡜ࡋ࡚㖡ࡼࡾᙅ☢ሙ࡛ࡶྠ➼ࡢ෭༷ຊࢆ
Ⓨ᥹࡛ࡁࡿቑᙉ᰾☢ᛶయ PrNi5 ࢆ⏝࠸ࠊࡇࢀ࡟ 1.2 T ⛬ᗘࡢ☢ሙࢆ༳ຍྍ⬟࡞ᑠᆺ㉸ఏᑟ࣐ࢢࢿࢵࢺ࡜₃ὤ☢ሙ㐽ⶸ⏝ࡢ㧗㏱☢⋡ࢩ࣮ࣝࢻࢆ⤌ࡳྜࢃࡏࠊ෭෾ࣘࢽࢵࢺ㸦ȭ42, L ~ 180㸧࡜ࡍࡿࠋࡇࡢᑠᆺ෭෾ࣘࢽࢵࢺࢆ 2 ࡘ⏝ពࡋࠊ2 ࡘࡢ⇕ࢫ࢖ࢵࢳࢆ௓ࡋ࡚ᕼ㔘෭෾ᶵ࡜┤ิ᥋⥆ࡍࡿࡇ࡜࡛㐃⥆෭༷ࢆᐇ⌧ࡍࡿ㸦ᅗ 1㸧ࠋከẁ໬࡟ࡼࡿ㐃⥆෭༷ࡢᐇ⌧࡜ࠊ༳ຍ☢ሙࡢపୗ࡟
ࡼࡗ࡚ྍ⬟࡟࡞ࡿ☢Ẽ㐽ⶸ࡟ࡼࡾࠊ኱ᖜ࡞┬ࢫ࣮࣌ࢫ໬ࡀྍ⬟࡛࠶ࡿࠋࢩ
࣑࣮ࣗࣞࢩࣙࣥィ⟬ࡢ⤖ᯝࠊ0.8 mK ࡛ 10 nW ࡢ෭༷ຊࢆᐇ⌧ࡍࡿ࡟ࡣࠊ⇕ᅗ㸯㸬㐃⥆෭෾ࢩࢫࢸ࣒

ࢫ࢖ࢵࢳࢆ௓ࡋࡓ 2 ࡘࡢ෭෾ࣘࢽࢵࢺ㛫ࡢ⇕᢬ᢠࢆṧ␃㟁Ẽ᢬ᢠ᥮⟬࡛ 100 n:⛬ᗘࡲ࡛ᑠࡉࡃࡍࡿᚲせࡀ࠶ࡿࡇ࡜ࡀࢃ࠿ࡗࡓ [1]ࠋ⌧ᅾࡣ㉸ఏᑟ⇕ࢫ࢖ࢵࢳ࡜෭෾ࣘࢽࢵࢺࡢタィࢆ⤊࠼ࠊヨసࢆ⾜ࡗ࡚࠸ࡿࠋ
ᑠᆺ໬࡜Ⰻዲ࡞⇕ఏᑟࢆ୧❧ࡉࡏࡿࡓࡵࠊ⇕ࢫ࢖ࢵࢳ㒊ࡢ㉸ఏᑟయࡢள㖄ᯈ࡜⇕ࣜࣥࢡࡢ㖟ᯈࡣᣑᩓ⁐᥋ࡋࡓ㸦ᅗ 2㸧ࠋヨసࡋࡓ⇕ࢫ࢖ࢵࢳࡢ㟁Ẽ᢬ᢠࡣ 4.2 K ࡟࠾࠸࡚ 114 n:࡛࠶ࡗࡓࠋࡇࢀࡣணഛᐇ㦂࠿ࡽᮇᚅࡋ࡚࠸ࡓ᢬ᢠ್ࡼࡾⱝᖸ኱ࡁ࠸ࡀࠊᐇ⏝ୖࡣチᐜ⠊ᅖෆ࡛࠶ࡿࠋᑠᆺ㉸ఏᑟ࣐ࢢࢿࢵࢺ㸦1.2 Tࠊ࣎࢔ᚄ 22 mm㸧ࡢタィ࡛ࡣࠊ☢ሙᤲᘬ᫬ࡢ⥺ᮦ⮬㌟
ࡢ☢ẼⓎ⇕࡜ࡑࡢ㝖༷࡟␃ពࡋࡓࠋ☢Ẽࢩ࣮ࣝࢻࡢ
タィ࡛ࡣࠊ㧗㏱☢⋡ᮦࡢ✀㢮ཬࡧཌࡳࢆ」ᩘ᳨ウࡋࠊ
ཌࡉ 4 mm ࡢ Permendur ᮦࢆ⏝࠸ࡿࡇ࡜࡛ࠊȭ42 ࡢࢩ࣮ࣝࢻࡢእ࡟₃ࢀࡿ☢ሙࢆ 1 mT ௨ୗ࡟పῶ࡛ࡁ
ࡿࡇ࡜ࡀࢃ࠿ࡗࡓࠋ
Ⓨ⾲࡛ࡣࠊࡇࢀࡽࡢヲ⣽ࡸࠊ⇕ࢫ࢖ࢵࢳࡢ┤᥋⇕ఏᑟ

ᅗ 2㸬〇సࡋࡓ⇕ࢫ࢖ࢵࢳᮏయ
ᐃࡢ⤖ᯝ࡟ࡘ࠸࡚Ⓨ⾲ࡍࡿணᐃ࡛࠶ࡿࠋ

[1] R. Toda, S. Murakawa, and H. Fukuyama, “Design and expected performance of a compact and continuous nuclear
demagnetization refrigerator for sub-mK applications”, accepted for publication in J. Phys. Conf. Ser. (2018).

79第９回低温センター研究交流会
概要集
The 9th Research Forum of Cryogenic Research Center
Abstract book2018 年 2 月
February 2018
発行者：東京大学低温センター
印刷：大日本印刷株式会社

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