24th JSAP Awards
The JSAP (the Japan Society of Applied Physics) Awards are given to recognize outstanding achievements in the field of applied physics for papers
published in JSAP and IPAP (the Institute of Pure and Applied Physics) publications: Japanese Journal of Applied Physics (JJAP) and membership journal"OYO BUTURI". There are three categories of the Awards: JJAP Awards for
the Best Original Paper, JJAP Awards for the Most Promising Young Scientist,

and JSAP Award for the Best Review Paper. Applications for the Awards weresolicited from the candidates themselves or appropriate recommendations.
The JSAP decided themselves the winners of each award listed below.
The awards recipients had a commemorative talk during the 63rd Autumn
Meeting of the Japan Society of Applied Physics, September 2002.

Recipients List
1. Award for the Best Original Paper(5) Recipients:

Dharam Pal GOSAIN, Takashi NOGUCHIand Setsuo USUI

Tetsuya AKIYAMA, Mayumi UNO, Hideki KITAURA, Kenji NARUMI, Rie KOJIMA, Kenichi NISHIUCHI and Noboru
YAMADA

Frontier Science Laboratories, Sony Corporation
High Mobility Thin Film Transistors Fabricatedon a Plastic Substrate at a Processing Temperature of 110°C
Jpn. J. Appl. Phys. Vol.39 (2000) L179-L181, Part 2,No.3A/B, 15 March 2000.

Optical Disk Systems Development Center, Matsushita Electric Industrial Co., Ltd.
Rewritable Dual-Layer Phase-Change Optical
Disk Utilizing a Blue-Violet Laser
Jpn. J. Appl. Phys. Vol.40 (2001) 1598-1603, Part
1, No.3B, 30 March 2001.

(2) Recipients:

2. Award for the Most Promising
Young Scientist(1) Recipients:

Rajesh Kumar MALHAN, Jun KOZIMA
and Tsuyohi YAMAMOTO
Research Laboratories, DENSO CORPORATIONA Novel Diffusion Resistant P-Base Region
Implantation for Accumulation Mode 4H-SiCEpi-Channel Field Effect Transistor
Jpn. J. Appl. Phys. Vol.39 (2000) 2001-2007, Part
1, No.4B, 30 April 2000.
(3) Recipients:

Seiichiro MATSUMOTO and Wenjun
ZHANG
National Institute for Research in Inorganic Materials
High-Rate Deposition of High-Quality, Thick
Cubic Boron Nitride Films by Bias-Assisted DC
Jet Plasma Chemical Vapor Deposition
Jpn. J. Appl. Phys. Vol.39 (2000) L442-L444, Part2, No.5B, 15 May 2000.
(4) Recipients:

Tokushi KIZUKA, Hajime OHMI, TakaoSUMI, Katsuyoshi KUMAZAWA, Shunji
DEGUCHI*, Mikio NARUSE*, Satoru FUJISAWA**, Shinya SASAKI**, Akira YABE**and Yuji ENOMOTO**
School of Engineering, Nagoya University, *JEOLLtd., **Mechanical Engineering Laboratory
Simultaneous Observation of Millisecond Dynamics in Atomistic Structure, Force and Conductance on the Basis of Transmission Electron Microscopy
Jpn. J. Appl. Phys. Vol.40 (2001) L170-L173, Part 2,No.2B, 15 February 2001.

24

JSAP International No.7 (January 2003)(1) Takamitsu ISHIHARA
Advanced LSI Technology Laboratory, Research &Development Center, Toshiba Corporation
Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal
Oxide Semiconductor Field Effect Transistors
with N2O and NO Oxynitrides
Takamitsu ISHIHARA, Shi-ichi TAKAGI and Masaki
KONDO
Jpn. J. Appl. Phys. Vol.40 (2001) 2597-2602, Part
1, No.4B, 30 April 2001.

(2) Shin-ichi NAGAHAMA
Nitride Semiconductor Research Laboratory, Nichia Corporation
Ultraviolet GaN Single Quantum Well Laser
DiodesShin-ichi NAGAHAMA, Tomoya YANAMOTO,
Masahiko SANO and Takashi MUKAI
Jpn. J. Appl. Phys. Vol.40 (2001) L785-L787, Part
2, No.8A, 1 August 2001.

(3) Musubu ICHIKAWA
Department of Functional Polymer Science, Faculty of Textile Science and Technology, Shinshu University
Photopumped Organic Solid-State Dye Laserwith a Second-Order Distributed Feedback
CavityMusubu ICHIKAWA, Yuji TANAKA, Naotoshi SUGANUMA, Toshiki KOYAMA and Yoshio TANIGUCHI

Jpn. J. Appl. Phys. Vol.40 (2001) L799-L801, Part
2, No.8A, 1 August 2001.

(4) Yoshinao MIZUGAKI
Research Institute of Electrical Communication,
Tohoku University
Single-Electron Signal Modulator Designed
for a Flash Analog-to-Digital Converter
Yoshinao MIZUGAKI and Per DELSING
Jpn. J. Appl. Phys. Vol.40 (2001) 6157-6162, Part
1, No.10, 15 October 2001.

(5) Isaho KAMATA
Central Research Institute of Electric Power Industry, Yokosuka Research Laboratory
Improvement in Electrical Properties of 4HSiC Epilayers by Micropipe Dissociation
Isaho KAMATA, Hidekazu TSUCHIDA, Tamotsu JIKIMOTO and Kunikazu IZUMI
Jpn. J. Appl. Phys. Vol.40 (2001) L1012-L1014,
Part 2, No.10A, 1 October 2001.

3. Award for the Best Review Paper(1) Recipients:

Hiroshi IWAI and Shun-ichiro OHMI*
Interdisciplinary Graduate School of Science andEngineering, Tokyo Institute of Technology*Precision and Intelligence Laboratory, Tokyo Institute of Technology
Thin Film Technologies for Advanced CMOSULSIs"OYO BUTURI" Vol.69 (2000) No.1 pp.4-14.
(2) Recipients:

Shozo KONO
Research Institute for Scientific Measurements,
Tohoku University
Structural Analyses of Semiconductor Surfaces by Photoelectron"OYO BUTURI" Vol.69 (2000) No.10 pp.1157-1165.