Tuesday, September 29
POSTER SESSION (13:30-15:30, Main Hall A, B)

PS-1-16Comprehensive Characterization of Generated Trap Sites in Gate Insulator using Advanced
Stress-induced Leakage Current Simulator
Y. Higashi, J. Chen and T. Ishihara, Toshiba Corp. (Japan)

All poster presenters must give the short oral presentations in Short Presentation Session
scheduled on September 29, 11:00 - 12:00.
Each Area Session Room; see page 46.
Area 1: Advanced LSI Processing & Materials Science

PS-1-17First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal
Oxidation
S. Kawachi1, H. Hiroki1, M. Araidai1, H. Kageshima2,4, T. Endoh3,4 and K. Shiraishi1,4, 1Nagoya
Univ., 2 Shimane Univ., 3 Tohoku Univ. and 4JST-ACCEL (Japan)(20 papers)

PS-1-1Low Interface Trap Density in In0.53Ga0.47as Metal-Oxide-Semiconductor Capacitors with
Molecular Beam Deposited HfO2/ La2O3 High-κ Dielectrics
T.W. Lin1, J.N. Yao1, Y.C. Lin1, K.C. Yang1, W.H. Wu1, K. Kakushima2, J.S. Maa1, E.Y. Chang1 andH. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)

PS-1-18
Angle-resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on
4H-SiC (0001)
H. Arai and H. Nohira, Tokyo City Univ. (Japan)

PS-1-2
Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of
HfO2/In0.53Ga0.47As MOSCAPs for Low EOT and Low Interface State Density
Q.H. Luc, H.B. Do, S.P. Cheng, J.H. Chen, S.H. Huynh, P.C. Chang, Y.C. Lin and E.Y. Chang,
NCTU (Taiwan)

PS-1-19 (Late News)
Investigation and Comparison of Quantum-Capacitance Induced Inversion-Charge Loss for
Ultra-Thin-Body and Double-Gate III-V n-MOSFETs
S.L. Shen, H.H. Shen, C.H. Yu and P. Su, NCTU (Taiwan)

PS-1-3
Improving Performance of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors
using in situ Post Remote-Plasma Treatment with N2/H2 Gases
Q.H. Luc, S.P. Cheng, J.H. Chen, G.Y. Lin, H.B. Do, P.C. Chang, G.W. Huang, K.M. Chen, Y.C. Lin
and E.Y. Chang, NCTU (Taiwan)

PS-1-20 (Late News)New Structural Properties of Ferroelectric Y2O3-doped HfO2 Films Probed by Microscopic
Raman Spectroscopy Measurements
K. Izukashi1,2, T. Nishimura1,2, S. Migita2,3 and A. Toriumi1,2, 1Univ. of Tokyo, 2 AIST and 3JSTCREST (Japan)

PS-1-4
Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using
Plasma Enhanced Atomic Layer Deposition
S.K. Eom1, R.S. Ki1, D.H. Kim1, H.Y. Cha2 and K.S. Seo1, 1Seoul National Univ. and 2Hongik Univ.
(Korea)Area 2: Interconnect Technologies and 3D Integration/ Sensor/ MEMS Integration/
Materials and Characterization(18 papers)

PS-2-1
Mechanical Properties of Electrodeposited Gold for MEMS Device
M. Yoshiba1,2, C.Y. Chen1,2, T.F.M. Chang1,2, D. Yamane1,2, K. Machida1,2,3, K. Masu1,2 and M.
Sone1,2, 1Tokyo Tech, 2 JST-CREST and 3NTT AT (Japan)

PS-1-5Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using
Ferroelectric Gate
M.H. Lee1, C. Liu1, P.G. Cheng1, C.C. Cheng1, K.Y. Chu1, M.J. Xie1, S.N. Liu1, J.W. Lee1, S.J.
Huang1 and M.H. Liao2, 1National Taiwan Normal Univ. and 2National Taiwan Univ. (Taiwan)

PS-2-2
Proposal of a Simple MEMS Phase Shifter Based on Effective Dielectric Constant
Modulation
D. Nakano1, M. Mori1, K. Maezawa1, H. Ishii2 and H. Ando3, 1Univ. of Toyama, 2 Toyohashi Univ. of
Tech. and 3National Inst. of Tech., Toyota College (Japan)

PS-1-6Fabrication of Low-Temperature (< 400 °C) Germanium MOSCAPs by Microwave Thermal
Oxidation
W.C. Chi1, C.C. Hsu1,2, C.H. Chou1, A.S. Shih1, Y.J. Lee2 and C.H. Chien1, 1NCTU and 2NDL,
NARLabs (Taiwan)

PS-2-3
Study on Ti/Au Two-Layered Cantilevers with Different Aspect Ratio for MEMS Devices
M. Teranishi1,2, T.F.M. Chang1,2, C.Y. Chen1,2, T. Konishi3, K. Machida1,2,3, H. Toshiyoshi1,4, D.
Yamane1,2, K. Masu1,2 and M. Sone1,2, 1JST-CREST, 2 Tokyo Tech, 3 NTT AT and 4Univ. of Tokyo(Japan)PS-1-7High-Performance P-Channel Polycrystalline-Germanium Thin Film Transistors via
Excimer Laser Crystallization and Counter Doping
C.Y. Liao, C.Y. Huang, M.H. Huang, C.H. Chou and H.C. Cheng, NCTU (Taiwan)

PS-2-4Micro-Texture Dependence of the Strength of Electroplated Copper Fine Bumps Used for
3-Dimensonal Integration
M. Gotoh, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-1-8UV Raman and Multiwavelength Photoluminescence Characterization of Ion Implanted
Silicon for In-Line Dopant Activation Process Monitoring Applications
W.S. Yoo 1, T. Ishigaki 1, T. Ueda 1, K. Kang 1, N. Hasuike 2, H. Harima 2 and M. Yoshimoto 2,
1
WaferMasters, Inc. and 2KIT (USA)PS-2-5
Local Stress Effect Due to Operation-Heating-Induced Adhesive Expansion on Transistor
Performances in 3D IC
H. Kino, H. Hashiguchi, S. Tanikawa, Y. Sugawara, S. Ikegaya, T. Fukusima, M. Koyanagi and T.
Tanaka, Tohoku Univ. (Japan)

PS-1-9Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type
Ge1-xSnx Epitaxial Layer
J. Jeon1, T. Asano1,2, W. Takeuchi1, M. Kurosawa1,3, O. Nakatsuka1 and S. Zaima1,3, 1Nagoya Univ., 2
JSPS Research Fellow and 3EcoTopia Sci. Inst., Nagoya Univ. (Japan)

PS-2-6
Combined Surface-Activated Bonding Technique for Low-Temperature Hydrophilic Wafer
Bonding with Interfacial Water Management
R. He1, M. Fujino1, A. Yamauchi2 and T. Suga1, 1Univ. of Tokyo and 2Bondtech Co., Ltd. (Japan)

PS-1-10n+Si/pGe Cross Heterojunctions Fabricated by Narrow Membrane Bonding
T.C. Liu1,2, S. Kabuyanagi1,2, T. Nishimura1,2 and A. Toriumi1,2, 1Univ. of Tokyo and 2JST-CREST(Japan)PS-2-7
Transient Liquid-Phase Sintering using Tin and Silver Powder Mixture for Die Bonding
M. Fujino1, H. Narusawa1, Y. Kuramochi1, E. Higurashi1, T. Suga1, T. Shiratori2 and M. Mizukoshi3,
1
Univ. of Tokyo, 2 ALPHA DESIGN CO., LTD. and 3SYNDEO (Japan)

PS-1-11
PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic ResistanceS. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang and H. Nakashima, Kyushu Univ.
(Japan)PS-2-8A Novel Hybrid Strategy of via-first Bare TSVs for Enhanced Signal Integrity in 3-D
Integrated Systems
R. Fang1, X. Sun1, M. Miao2 and Y. Jin1, 1Peking Univ. and 2Beijing Info. Sci.&Tech. Univ. (China)

PS-1-12Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at
Metal/n-Ge Interface
A. Suzuki1, O. Nakatsuka1, S. Shibayama1,2, M. Sakashita1, W. Takeuchi1, M. Kurosawa1,3 and S.
Zaima1,3, 1Nagoya Univ., 2 JSPS Research Fellow and 3EcoTopia Sci. Inst., Nagoya Univ. (Japan)

PS-2-9
Capacitance Characteristics of Low-k Low-Cost CVD Grown Polyimide Liner for HighDensity Cu-TSVs in 3D-LSI
M. Murugesan, J.C. Bea, T. Fukushima, H. Hashimoto, K.W. Lee and M. Koyanagi, Tohoku Univ.
(Japan)PS-1-13
Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs
Y. Morita, T. Mori, K. Fukuda, W. Mizubayashi, S. Migita, K. Endo, S. O'uchi, Y.X. Liu, M.
Masahara, T. Matsukawa and H. Ota, AIST (Japan)

PS-2-10
Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High
Aspect Ratio TSVs
S. Yang1, W. Cheng1, H. Wu1, C. Song1,2 and W. Zhang1,2, 1NCAP China and 2IMECAS (China)

PS-1-14
Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI
T. Nishimura, T. Nakamura, T. Yajima and A. Toriumi, Univ. of Tokyo (Japan)

PS-2-11
Thermal Mechanical Behavior of TSVs with WN/Ni as Barrier/Seed Layer System for 2.5D
Integration
X.M. Jing, NCAP China (China)

PS-1-15
Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated
Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator
M. Akazawa, S. Takeshima, A. Nakagawa, K. Hiramatsu and S. Higashi, Hiroshima Univ. (Japan)- 30 -

Tuesday, September 29
PS-2-12
Electroless Nickel Barrier/Seed Layer Deposition on Dielectric Liners for Advanced Cu-TSV
Applications
T. Fukushima1, K. Taniguchi2, S. Watariguchi2, M. Murugesan1, C. Nagai1, A. Nakamura1, H.
Hiroyuki1, J. Bea1, T. Tanaka1, M. Koyanagi1 and K. Lee1, 1Tohoku Univ. and 2Meltex Inc. (Japan)

PS-3-10Impacts of Threshold Voltage Design for Monolithic 3D 6T SRAM with Si and InGaAs-n/Ge-p Devices considering Interlayer Coupling
K.C. Yu, C.H. Yu, V.P.H. Hu, P. Su and C.T. Chuang, NCTU (Taiwan)
PS-3-11Multi-Threshold Voltages in Ultra-thin-body Devices by Asymmetric Dual-Gate Structure
H. Kim, J. Park, M.W. Kwon, S. Hwang and B.G. Park, Seoul National Univ. (Korea)

PS-2-13
A Novel Low Temperature (<500°C) and Low-κ (3.8) Boron Nitride PECVD Offset Spacer
Featuring 3D VLSI Integration
C.M.V. Lu1,2, C. Bout1, C. Fenouillet Beranger1, A. Roule1, M.P. Samson1,2, B. Previtali1, C. Arvet1,2,
A. Michallet1,2, N. Rochat1, S. Favier1,2, R. Kachtouli1, V. Loup1, P. Besson1,2, M. Garcia Barros1,2,
N. Posseme1, F. Pierre1, P. Maury2, D. Benoit2, P. Batude1, M. Vinet1 and T. Skotnicki2, 1CEA-LETI
and 2STMicroelectronics (France)

PS-3-12Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy andConcentration Ion Implantation on Random Telegraph Noise
T.H. Kao1, S.J. Chang1, Y.K. Fang1, P.C. Huang1, Y.K. Su1, Y.J. Shen1, C.Y. Wu2 and S.L. Wu2,
1
NCKU and 2Cheng Shiu Univ. (Taiwan)

PS-2-14
Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in
Integrated Passive Devices (IPD) Technology
Y.C. Chang1,2, P.Y. Wang1, S.H. Hsu1, Y.T. Chang3, C.K. Chen3 and D.C. Chang2, 1National Tsing
Hua Univ., 2 CIC, NARLabs and 3BSMI, MOEA (Taiwan)

PS-3-13
The Limits of Applicability of the Analytic Model for Hot Carrier Degradation
M. Jech1, P. Sharma1, S. Tyaginov1,2, F. Rudolf1 and T. Grasser1, 1TU Wien and 2Ioffe PhysicalTechn. Inst. (Austria)

PS-2-15
Preparation of High Performance SiNX Films Deposited by Reactive Sputtering and PECVD
at Low Temperatures
M. Sato1, M.B. Takeyama1, Y. Nakata2, Y. Kobayashi2, T. Nakamura2 and A. Noya1, 1Kitami Inst. of
Tech. and 2Fujitsu Labs. Ltd. (Japan)

PS-3-14
Investigation of Backgating Effect on Superlinear Onset of Output Characteristics for UTB
III-V Heterojunction Tunnel FET
S.E. Huang, M.L. Fan and P. Su, NCTU (Taiwan)
PS-3-15
Optimized Nanowire Diameter for III-V Homojunction and Heterojunction Gate-All-Around
Tunnel FETs
Y.W. Wang and P. Su, NCTU (Taiwan)

PS-2-16
In Situ FTIR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic
Acid Treatment with Pt Catalysts
P.W. Chou1, C.C. Kuo1, J.Y. Lin2 and J.M. Song1, 1National Chung Hsing Univ. and 2ITRI (Taiwan)

PS-3-16
Transmission Line Model and Transconductance Method for Layout Dependent Source
Resistance Extraction in Multi-Finger MOSFETs
Y.Z. Lo and J.C. Guo, NCTU (Taiwan)

PS-2-17
Measurement of the Strength at Grain Boundaries in Electroplated Copper Thin-Film
Interconnections
T. Nakanishi, T. Kato, Y. Ichikawa, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-3-17Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky
Source/Drain
Y.B. Zhang, L. Sun, H. Xu and J.W. Han, Peking Univ. (China)

PS-2-18 (Late News)
Radio Frequency Characteristics in Tantalum Nitride Thin Film Resistor
S.H. Kwon1, M. Nam1, A. Kim1, K. Kang1, S.J. Chae1, S.J. Lee1, W.S. Sul2 and S.G. Pyo1, 1ChungAng Univ. and 2NNFC (Korea)
Area 3: CMOS Devices / Device Physics

Area 4: Advanced Memory Technology(17 papers)(13 papers)

PS-4-1Si-based Nonvolatile Field Effect Transistor using Low Temperature Process
Y. Miyata, A. Ashida, T. Yoshimura and N. Fujimura, Osaka Prefecture Univ. (Japan)

PS-3-1Discrete Dopant Impact on the 7 nm Nanowire Transistor Performance
X. Wang1, Y. Wang2, C. Riddet3, E. Towie3, B. Cheng3, X. Liu2 and A. Asenov1,3, 1Univ. of Glasgow, 2Peking Univ. and 3Gold Standard Simulations Ltd. (UK)

PS-4-2
Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beamand Its Mechanism Investigated by First-Principles Calculation
T. Kubota1, Y. Kikuchi1,2, T. Nozawa2 and S. Samukawa1,3, 1IFS, Tohoku Univ., 2 Tokyo Electron Ltd.
and 3WPI-AIMR, Tohoku Univ. (Japan)

PS-3-2
Proposal of Tunneling and Diffusion Current Hybrid MOSFET
K. Furukawa, R. Kuroda, T. Suwa, K. Hashimoto, A. Teramoto and S. Sugawa, Tohoku Univ.
(Japan)PS-4-3A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising
Crystalline In-Ga-Zn Oxide FET
T. Matsuzaki, T. Onuki, S. Nagatsuka, H. Inoue, T. Ishizu, Y. Ieda, N. Yamade, H. Miyairi,
M. Sakakura, Y. Shionoiri, K. Kato, T. Okuda, J. Koyama, Y. Yamamoto and S. Yamazaki,
Semiconductor Energy Lab. Corp. Ltd. (Japan)

PS-3-3
RF Characteristics of Poly-Si TFTs with HfO2 Gate Dielectric Fabricated by Microwave
Annealing
J.J. Tsai and H.H. Hu, National Taipei Univ. of Tech. (Taiwan)
PS-3-4Trap-Assisted Tunneling Effects on Gate-Induced Drain Leakage in Silicon-Germanium
Channel pFET
V.A. Tiwari1, A. Scholze2, R. Divakaruni2 and D.R. Nair1, 1Indian Inst. of Tech. Madras and 2IBM
SRDC (India)

PS-4-4High-performance In-Ga-Zn-O TFT Memory with Pt Nanocrystals
S.B. Qian, W.P. Zhang, W.J. Liu and S.J. Ding, Fudan Univ. (China)
PS-4-5
Resistance Switching Memory Operation of CaF2/Si/CaF2 Resonant-tunneling Quantum-well
Structures using Nanocrystalline-Si Secondary Barrier Layers
K. Suda, Y. Kuwata and M. Watanabe, Tokyo Tech (Japan)

PS-3-5
Low Frequency Noise and Mobility Correlation from RT to Low Temperatures for n-Channel
Ge MOSFETs
S. Ghosh, P. Bhatt, Y. Tiwari and S. Lodha, IIT Bombay (India)

PS-4-6
Switching Kinetics of VCM-based Memristor: Evolution and Positioning of Nanofilament
J.Y. Chen, C.W. Huang, C.H. Chiu, Y.T. Huang and W.W. Wu, NCTU (Taiwan)

PS-3-6Comparison of Gate Structures of P-channel Poly-Si Nanowire Trench Ultra-thin Channel
Juntionless Field-Effect Transistors
Y.C. Wu1, K.W. Lin1, M.S. Yeh1, Y.R. Lin1, M.H. Wu1 and Y.H. Lin2, 1National Tsing Hua Univ. and2
National United Univ. (Taiwan)

PS-4-7
Impact of Film Morphology on the Switching Characteristics of Ta 2O 5-Based Atomic
Switches
C. Mannequin1, T. Tsuruoka1, T. Hasegawa2 and M. Aono1, 1NIMS and 2Waseda Univ. (Japan)

PS-3-7
1/f Noise Performances and Noise Sources of Accumulation Mode Si(100) n-MOSFETs
P. Gaubert, A. Teramoto and S. Sugawa, Tohoku Univ. (Japan)

PS-4-8
Guideline Model for the Bias-Scheme-Dependent Power Consumption of a ReRAM Crossbar
Array
W.K. Sun, H. Lim, S.J. Choi and H.S. Shin, Ewha Womans Univ. (Korea)

PS-3-8
ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET
K. Takei1, S. Hashimoto1, J. Sun1, X. Zhang1, S. Asada1, T. Xu1, T. Wakamizu1, T. Matsukawa2, M.
Masahara2 and T. Watanabe1, 1Waseda Univ. and 2AIST (Japan)

PS-4-9Properties of SiC Resistive Memory for Harsh Environments
K. Morgan, J. Fan, R. Huang, L. Zhong, R. Gowers, L. Jiang and K. De Groot, Univ. ofSouthampton (UK)

PS-3-9Novel 5-State Latch Using Double-Peak Negative Differential Resistance (NDR) andStandard Ternary Inverter (STI)
S. Shin and K.R. Kim, UNIST (Korea)

PS-4-10
Understanding of the Abnormal Unipolar Resistance Switching Behavior in CBRAM
H.T. Sun, Q. Liu, D.L. Xun, K.K. Zhang, H.B. Lv, W. Banerjee, S.B. Long and M. Liu, IMECAS(China)- 31 -

PS-4-11
SONNOS Nonvolatile Memory Based on Ultra-Thin Body Poly-Si Junctionless Field-EffectTransistor with Excellent Retention
Y.R. Lin1, W.C. Wang1, Y.H. Lin2 and Y.C. Wu1, 1National Tsing Hua Univ. and 2National United
Univ. (Taiwan)

PS-6-4
Thermal Stability of the Interface between Atomic Layer Deposited High-k ZrO2 and GaN
H. Wang1,2, G. Ye1 and K.S. Ang2, 1NTU and 2TL@NTU (Singapore)
PS-6-5
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
H.S. Lee1,2, D.Y. Jung1, Y.R. Park1, J.H. Na1, H.G. Jang1, H. Lee1, C.H. Jun1, J.B. Park1, Z.S. Kim1,
J.K. Mun1, S.O. Ryu2, S.C. Ko1 and E.S. Nam1, 1Electronics and Telecommunications Res. Inst. and2
Dankook Univ. (Korea)

PS-4-12 (Late News)
Concept of a SOT-MRAM Based on 1Transistor-1MTJ-Cell Structure
A. Makarov, T. Windbacher, V. Sverdlov and S. Selberherr, TU Wien (Austria)
PS-4-13 (Late News)
Theoretical Study of SET Operation in Nantero Memory Cell
M. Stopa1,2 and T. Rueckes1, 1MIT and 2Nantero Inc. (USA)Area 5: Advanced Circuits and Systems

PS-6-6
Electrolyte Electro-Reflectance Spectra of Crack-Free AlGaN/GaN High Electron Mobility
Transistors on Si Substrate
T.S. Ko1, B.Y. Hu1, N.W. Chang1, D.Y. Lin1 and J.S. Li2, 1National Univ. of Changhua Edu. and2
Feng Chia Univ. (Taiwan)(12 papers)

PS-6-7
Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement
C.C. Liu1, Y.X. Huang1, W.C. Shih1, H.H. Hsu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1 and H. Iwai2,
1
NCTU and 2Tokyo Tech (Taiwan)

PS-5-1
Associative Memory for Nearest Neighbor Search with High Flexibility of Reference-Vector
Number Due to Configurable Dual-Storage Space
F. An, K. Mihara, S. Yamasaki, L. Chen and H.J. Mattausch, Hiroshima Univ. (Japan)

PS-6-8The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using
Stacking AlN Protection Layers
A.J. Tzou1, D.H. Hsieh1, J.K. Huang1, C.J. Su2, Z.Y. Li1,3, C.Y. Chang1,4 and H.C. Kuo1, 1NCTU, 2
NDL, NARLabs, 3 Epistar Inc. and 4Academia Sinica (Taiwan)

PS-5-2
Memory-based LVQ Neural Network with Dedicated Learning Circuit
X. Zhang, F. An, L. Chen and H.J. Mattausch, Hiroshima Univ. (Japan)
PS-5-3
Non-volatile and Volatile Hybrid Memories Embedded in the Standard CMOS Process
H. Lin, Y.L. Chiou, H.J. Chiu and C.Y. Wu, National Chung Hsing Univ. (Taiwan)

PS-6-9High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers
C.Y. Lee1, Y.P. Lan2, Y.S. Gau3, C.H. Chen3, R.M. Lin3 and C.Y. Chang1,2, 1Academia Sinica, 2 NCTU
and 3Chang Gung Univ. (Taiwan)

PS-5-4
A Compact 0.3-to-1.125GHz Self-Biased PLL for System-on-Chip Clock Generation in
0.18μm CMOS
Z. Zhang, L. Liu, P. Feng, J. Liu and N. Wu, Chinese Academy of Sciences (China)

PS-6-102-Dimentional Characterization of Ion-Implantation Damage in GaN Schottky Contacts
Using Scanning Internal Photoemission Microscopy
K. Shiojima1, S. Murase1, S. Yamamoto1, T. Mishima2 and T. Nakamura2, 1Univ. of Fukui and 2Hosei
Univ. (Japan)

PS-5-5
A DC-balanced Bus-invert Coding for Stabilizing the Intermediate Power Level in StackedVdd LSIs
Y. Kohara, N. Kubo, M. Alimudin, A. Rahmat and K. Nakamura, Kyushu Inst. of Tech. (Japan)

PS-6-11
DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-EffectTransistors
T. Tsutsumi, G. Nishino, J. Freedsman, M. Miyoshi and T. Egawa, Nagoya Inst. of Tech. (Japan)

PS-5-6
A Wireless Power Transfer System for Small-Sized Sensor Applications
Y. Akihara1, T. Hirose1, Y. Tanaka1, N. Kuroki1, M. Numa1 and M. Hashimoto2, 1Kobe Univ. and2
Osaka Univ. (Japan)

PS-6-12High-Quality PECVD SiO2 Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOSHFETs
H.S. Kim1, J.G. Lee2, S.H. Park1, S.W. Han1, K.S. Seo3 and H.Y. Cha1, 1Hongik Univ., 2 Univ. of
Texas at Dallas and 3Seoul National Univ. (Korea)

PS-5-7
Batteryless Transmitter for Biomedical Implant
H.C. Chen, C.Y. Kao and S.C. Yang, National Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-6-13
Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al2O3/
AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates
T. Kubo, M. Miyoshi and T. Egawa, Nagoya Inst. of Tech. (Japan)

PS-5-8A Fully On-Chip Switched-Capacitor DC-DC Power Converter with Startup/Fail-Safe
CircuitY. Kojima, T. Hirose, K. Tsubaki, T. Ozaki, H. Asano, N. Kuroki and M. Numa, Kobe Univ. (Japan)
PS-5-9A Fully Integrated Boost Power Supply with On-Chip Photovoltaic Device
A. Watanabe, D. Orihara, Y. Minami and N. Nakano, Keio Univ. (Japan)

PS-6-14High Thermal Stability AlGaN/GaN Schottky Barrier Diode with Diamond-Like Carbon(DLC) Heat Dissipation Anode Design
Y.H. Cheng, H.Y. Wang, L.Y. Peng and H.C. Chiu, Chang Gung Univ. (Taiwan)

PS-5-10Discharging-Phototransistor-Integrated High-Voltage Si Photovoltaic Cells for Fast Drivingof an Electrostatic MEMS Actuator by Wavelength Modulation
I. Mori and Y. Mita, Univ. of Tokyo (Japan)

PS-6-15
Nonvolatile Memory Effects in GaN Metal-Oxide-Semiconductor Heterostructure FETs withThin AlGaN Barrier
D.M. Keum, K.H. Cho and H.T. Kim, Hongik Univ. (Korea)

PS-5-11
Design and Characteristics of a MEMS Human Body Hardness Sensor Aimed to Diagnosis of
Lesion Size
Y. Maeda, K. Terao, F. Shimokawa and H. Takao, Kagawa Univ. (Japan)

PS-6-16
Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiN x / HfO 2 Dual
Passivation Layer
D.H. Kim1, M.J. Kang1, S.K. Eom1, H.Y. Cha2 and K.S. Seo1, 1Seoul National Univ. and 2Hongik
Univ. (Korea)

PS-5-12CMOS Temperature Sensor Using a Modified Bandgap Reference Voltage Circuit with a
Low-Temperature-Coefficient Resistor Structure
R.L. Wang1, J.L. Shi1, Y.F. Hao1, K.B. Lee1, X.J. Yang1, W.D. Wu1, H.H. Liao2, H.H. Tsai2 and Y.Z.
Juang2, 1National Kaohsiung Normal Univ. and 2NARLabs (Taiwan)
Area 6: Compound Semiconductor Electron Devices & Related Technologies

PS-6-17
Preparation of InAs Surface by Hydrogen Plasma Pre-Treatment for Low Interfacial Trap
Density MOS Capacitors
C.Y. Chen1, C.H. Hsieh1, W.J. Hsueh1 and J.I. Chyi1,2, 1National Central Univ. and 2Academia
Sinica (Taiwan)
PS-6-18
Analysis of Energy States Where Electrons and Holes Coexist in Pseudomorphically Strained
InAs HEMTs
Y. Nishio, T. Sato, N. Hirayama, T. Iida and Y. Takanashi, Tokyo Univ. of Science (Japan)(27 papers)

PS-6-1
Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of
Diamond Heat Sink
Y.T. Kim1, J.H. Lee2 and Y.M. Jhon1, 1Korea Inst. of Sci. & Tech. and 2KNU (Korea)

PS-6-19
Low Interface Trap Density HfO2/Al2O3/InAs MOS Capacitors Prepared by Nitrogen Plasma
Treatment
G.B. He1, W.J. Hsueh1, C.Y. Chen1 and J.I. Chyi1,2, 1National Central Univ. and 2Research Center
for Applied Sci., Academia Sinica (Taiwan)

PS-6-2
Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator
for High Power Application
Y.X. Huang1, W.C. Shih1, T.W. Lin1, C.H. Wu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1, K. Kakushima2 andH. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)

PS-6-20
Study on Electrical Performances of ZnO-TFTs with 3-D Finlike Channels Fabricated by
Nanoimprint Lithography and Atomic Layer Deposition
H.J.H. Chen1, B.L. Yeh1, C.Y. Chiang2, T.N. Lee1 and K.C. Hsieh2, 1National Chi Nan Univ. and2
National Tsing Hua Univ. (Taiwan)

PS-6-3
Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2
Gate Dielectric
W.C. Shih1, H.H. Hsu1, Y.X. Huang1, T.W. Lin1, C.H. Wu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1, K.
Kakushima2 and H. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)- 32 -

PS-6-21
Structural Properties and Electrical Characteristics of High-κ Lu 2O3 and Lu2TiO5 Gate
Dielectrics for InGaZnO Thin-Film Transistors
T.M. Pan, C.H. Chen, H.J. Wang and I.C. Huang, Chang Gung Univ. (Taiwan)

PS-7-12
Free Spectral Range (FSR) Control of a High Quality Factor - 1D Photonic Crystal (PhC)
Extended Cavity
A.R. Md Zain1, B.Y. Majlis1 and R.M. De La Rue2, 1Universiti Kebangsaan Malaysia and 2Univ. of
Glasgow (Malaysia)

PS-6-22
Impact of Gate Dielectrics and Oxygen Annealing on Tin-Oxide Thin-Film Transistors
C.W. Zhong1, H.C. Lin1, J.R. Tsai2, K.C. Liu3 and T.Y. Huang1, 1NCTU, 2 Asia Univ. and 3Chang
Gung Univ. (Taiwan)

PS-7-13
Output Characteristics of a Double Circular Ring Resonators Laser Diode Through Slioton
Wave Guiding
M.C. Shih, Y.H. Kao and W.H. Lan, National Univ. of Kaohsiung (Taiwan)

PS-6-23
Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High
Indium Composition
K. Tsutsui, D. Matsubayashi, N. Ishihara, T. Takasu, S. Matsuda and S. Yamazaki, Semiconductor
Energy Lab. Co., Ltd. (Japan)

PS-7-14Highly Fabrication-Tolerant Shallow-Grating Coupler for Robust Coupling to Multimode"Optical Pin"
J. Ushida, M. Tokushima, T. Uemura and K. Kurata, PETRA (Japan)

PS-6-24
ZnO Thin Film Transistor with U-shape Active Layer for High Performance Application
H.J. Yun, Y.M. Kim, S.D. Yang, H.D. Lee and G.W. Lee, Chungnam National Univ. (Korea)

PS-7-15Ultracompact, Low-loss Waveguide Polarizer Based on Plasmonics
L. Gao, B. Bai and Z. Zhou, Peking Univ. (China)

PS-6-25 (Late News)
Design of Drain for Low off Current in GaAsSb/InGaAs Tunnel FETs
S. Iwata1, W. Lin1, K. Fukuda1,2 and Y. Miyamoto1, 1Tokyo Tech and 2AIST (Japan)

PS-7-16
Localized Surface Plasmon-Enhanced Light Emission Output of Amorphous Silicon
Quantum Dots Light-Emitting Device with Plasmonic Subwavelength Ag Grating Structure
T.H. Tsai, W.K. Choi and H.Y. Lin, National Taiwan Univ. (Taiwan)

PS-6-26 (Late News)
Low-noise Performance of Pseudomorphic InGaAs/InAlAs HEMTs
I. Watanabe1, A. Endoh1,2, T. Mimura1,2 and A. Kasamatsu1, 1NICT and 2Fujitsu Labs. (Japan)

PS-7-17
The Excellent Full-color Micro Display Dominated by RGB Quantum Dots
H.Y. Lin1, H.V. Han1, W.C. Chong2, J.R. Li1, C.C. Lin1, H.M. Chen1, K.M. Lau2 and H.C. Kuo1,
1
NCTU and 2HKUST (Taiwan)

PS-6-27 (Late News)
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
A. Endoh1,2, I. Watanabe1, A. Kasamatsu1, T. Takahashi2, S. Shiba2, Y. Nakasha2, T. Iwai2 and T.
Mimura1,2, 1NICT and 2Fujitsu Labs. (Japan)
Area 7: Photonic Devices and Related Technologies

PS-7-19
Enhanced Light Extraction from Lateral Side of InGaN-based LEDs Grown on Nano-Sized
Patterned Sapphire Substrates
Y.H. You1, W.H. Wu2, B.W. Lin3, W.C. Hsu4, V.C. Su1, M.L. Lee1, P.H. Chen1, C.H. Kuan1 and R.M.
Lin2, 1National Taiwan Univ., 2 Chang Gung Univ., 3 NCTU and 4Sino-America Silicon Products
Inc. (Taiwan)(23 papers)

PS-7-1GaN Metal-Insulator-Semiconductor Ultraviolet Detectors with Lanthanum Fluoride (LaF3)
Insulating Layers
C.H. Chen and C.F. Cheng, Cheng Shiu Univ. (Taiwan)

PS-7-20
Hydrothermal Growth of Single-crystalline ZnO Thin Films and Theirs Application on UVPhotodetectors
C.H. Wu1, S.J. Wang1, T.H. Lin1, Y.C. Tu1, C.H. Hung1, P.Y. Liu1, Y.H. Chin1, K.M. Uang2 and T.M.
Chen2, 1NCKU and 2WuFeng Univ. (Taiwan)

PS-7-2
Performance Enhancement of Blue InGaN Light-Emitting Diodes with p-InGaN/GaN SPS
Last Barrier and p-AlGaN/GaN SPS EBL
P.K. Lin1, C.K. Wang1, Y.Z. Chiou1, S.B. Chang2 and S.J. Chang2, 1Southern Taiwan Univ. of Sci.
and Tech. and 2NCKU (Taiwan)

PS-7-21
Preparation of Porous p-ZnO Films by Hydrothermal Method and Its Application on
Ultraviolet Sensors
Y.C. Tu1, S.J. Wang1, T.H. Lin1, C.H. Hung1, C.H. Wu1, P.Y. Liu1, Y.H. Chin1, K.M. Uang2 and T.M.
Chen2, 1NCKU and 2WuFeng Univ. (Taiwan)

PS-7-3
Enhanced Light Intensity of InGaN-based LEDs Grown on Molybdenum Patterned Sapphire
Substrates
W.H. Wu1, Y.H. You2, V.C. Su2, M.L. Lee2, P.H. Chen2, C.H. Kuan2 and R.M. Lin1, 1Chang Gung
Univ. and 2National Taiwan Univ. (Taiwan)

PS-7-22
Electro-Optic Characteristics Improvement of ZnMgTe/ZnTe Waveguide Devices
W.C. Sun1, F. Kazami1, J. Wang1, T. Nakasu1, S. Hattori1, T. Kizu1, Y. Hashimoto1, M. Kobayashi1,2
and T. Asahi3, 1Waseda Univ., 2 Kagami Memorial Res. Inst. for Materials Sci. and Tech. and 3JX
Nippon Mining & Metals Corp. (Japan)

PS-7-4
A Narrow-band Short Wavelength Type II InAs/GaSb Superlattices Photodetector with High
Performance
J.L. Huang1,2, W.Q. Ma1, Y.H. Zhang1, Y.L. Cao1, K. Liu1, J.W. Huang1 and S.L. Lu2, 1Institute of
Semiconductors, CAS and 2SINANO, CAS (China)

PS-7-23
Demonstration of Spatial Demultiplexing of Polarization Modulation Signal Based on
Magneto-optical Modulation of Multiplexed Lightwave in Fiber
K. Nishibayashi 1, H. Yoneda 2, K. Kuga 3 and H. Munekata 1, 1Tokyo Tech, 2 Univ. of ElectroCommunications and 3NHK STRL (Japan)

PS-7-5Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II
Infrared Photodetectors with Reduced Device Areas
H.A. Chen1,2, T.C. Shih1, H.Y. Chen3 and S.Y. Lin1,2,3, 1Academia Sinica, 2 National Taiwan Univ. and3
National Taiwan Ocean Univ. (Taiwan)

PS-7-24
Fabrication of Mesa-type Mg2Si Pn-junction Photodiode for 2 - 4 μm IR-detection
T. Akiyama, N. Hori and H. Udono, Ibaraki Univ. (Japan)
Area 8: Advanced Material Synthesis and Crystal Growth Technology

PS-7-6
Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection
InGaAsP Photonic Devices
J.K. Park1,2, M. Takenaka1,2 and S. Takagi1,2, 1Univ. of Tokyo and 2JST-CREST (Japan)(27 papers)

PS-8-1
Temperature-Dependent Photoluminescence and Hall-Effect Studies of Ge 1-ySn y Alloys
Grown on Ge-Buffered Si Substrates
M.Y. Ryu1, T.R. Harris2, B. Wang2,3, Y.K. Yeo2 and J. Kouvetakis4, 1Kangwon National Univ., 2 AFIT,
3
Wright State Univ. and 4Arizona State Univ. (Korea)

PS-7-7
Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with
Segmented Contacts
N. Ozaki1,2, T. Yasuda1, H. Shibata1, H. Ohsato3, E. Watanabe3, N. Ikeda3, Y. Sugimoto3, D.T.D.
Childs2 and R.A. Hogg2, 1Wakayama Univ., 2 Univ. of Sheffield and 3NIMS (Japan)

PS-8-2
Electrical Property of Single-phase HMS Grown by Temperature Gradient Solution Growth
Method using Ga and Sn Solvent
S. Hori1, M. Iioka1, S. Jimba1, Y. Hara2 and H. Udono1, 1Ibaraki Univ. and 2Ibaraki College of Tech.
(Japan)PS-7-8
Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide
Structure
F. Gao, S. Luo, H.M. Ji and T. Yang, Chinese Academy of Sciences (China)

PS-8-3
Surface Hydrogen Passivation and Sn Distribution in Ge1-xSnx (001) Materials: A DFT Study
H. Johll1, M. Samuel1, R.Y. Koo1, H.C. Kang2,3, S.W. Ong3, Y.C. Yeo2 and E.S. Tok2,3, 1National
Junior College, 2 NUS and 3Yale-NUS College (Singapore)

PS-7-9Photoconductivity with 1.55 μm Excitation of InAs QDs Embedded in InGaAs Barriers on
GaAs Substrate
K. Murakumo, Y. Yamaoka, N. Kumagai, T. Kitada and T. Isu, Tokushima Univ. (Japan)

PS-8-4
Role of Monolayer Indium Atom Distribution in Metalorganic Chemical Vapor Deposition of
InAs/GaAs Epitaxy on Ge Substrate
H.W. Yu, H.Q. Nguyen, T.M. Wang and E.Y. Chang, NCTU (Taiwan)

PS-7-10
Coupling Structures between Crystal/Amorphous Si Waveguides for In-Plane Integration
K. Itoh, Y. Kuno, J. Kang, Y. Hayashi, J. Suzuki, T. Amemiya, N. Nishiyama and S. Arai, Tokyo Tech
(Japan)PS-8-5Resonant Excitation of Single Luminescence Centers in GaAs:N
M. Ikezawa1, N. Yasuda1, L. Zhang1, Y. Sakuma2, K. Sakoda2 and Y. Masumoto1, 1Univ. of Tsukuba
and 2NIMS (Japan)

PS-7-11
Photosensing in MOS(p) and MOS(n) Photodiodes
C.T. Yang and J.G. Hwu, National Taiwan Univ. (Taiwan)- 33 -

PS-8-6
Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates
by Low Pressure Chemical Vapor Deposition
N. Umehara, A. Masuda, T. Shimizu, T. Kouno, H. Kominami and K. Hara, Shizuoka Univ. (Japan)

PS-8-26
Thermoelectric Properties of YbxFeyCo4-ySb12 Prepared under High Pressure
Y. Chen, Y. Kawamura and C. Sekine, Muroran Inst. of Tech. (Japan)
PS-8-27
Effect of Fabrication Method on the Structural and Magnetic Properties of Copper Ferrite
S. Pongpadung, T. Kamwanna and V. Amornkitbamrung, Khon Kaen Univ. (Thailand)

PS-8-7N-face GaN (000-1) Films with Hillock-Free Smooth Surfaces Grown by Group-III-Source
Flow-Rate Modulation Epitaxy
C.H. Lin, T. Akasaka and H. Yamamoto, NTT Corp. (Japan)

PS-8-28 (Late News)
Chemical Vapor Deposition of Highly Resistive ZnO Films using Nonequilibrium N 2/O2
Plasma Generated near Atmospheric Pressure
Y. Nose1, T. Kiguchi1, T. Yoshimura1, A. Ashida1, T. Uehara2 and N. Fujimura1, 1Osaka Prefecture
Univ. and 2Sekisui Chemical Co., LTD. (Japan)

PS-8-8Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase
H. Shimoyama, M. Mori and K. Maezawa, Univ. of Toyama (Japan)
PS-8-9Selective-Area Growth of Heavily N-Doped C-GaN/GaAs Nanostubs on Si(100) Substrate by
Molecular Beam Epitaxy
Y.J. Chang, B. Beekley, M. Goorsky and J. Woo, UCLA (USA)Area 9: Physics and Applications of Novel Functional Devices and Materials(11 papers)

PS-9-1
Performance Enhancement of Calcium-doped Zinc Oxide Thin Film Transistors Fabricatedon Glass at Low Temperature
W. Yu, D.D. Han, G.D. Cui, P. Shi, Y. Zhang, Y.Y. Cong, X.L. Zhou, L.L. Huang, X. Zhang, Y. Wangand S.D. Zhang, Peking Univ. (China)

PS-8-10
AlGaN Microdisks on Top of Supporting GaN Columns Fabricated using Hydrogen
Environment Anisotropic Thermal Etching
S. Suzuki1, T. Kouno1, H. Takeshima1, A. Kikuchi2, K. Kishino2, M. Sakai3 and K. Hara1, 1Shizuoka
Univ., 2 Sophia Univ. and 3Univ. of Yamanashi (Japan)

PS-9-2Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on
Flexible Plastic Substrate at Low Temperature
G.D. Cui, D.D. Han, W. Yu, P. Shi, Y. Zhang, L.L. Huang, Y.Y. Cong, X.L. Zhou, X.M. Zhang, S.D.
Zhang, X. Zhang and Y. Wang, Peking Univ. (China)

PS-8-11
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots
Grown by Metal-organic Chemical Vapor Deposition
B. Shi and K.M. Lau, The Hong Kong Univ. of Sci. & Tech. (China)

PS-9-3Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin
Barrier Layers in Silicon Microelectronics
Y.Y. Illarionov1,2, M.I. Vexler2, V.V. Fedorov2, S.M. Suturin2, N.S. Sokolov2 and T. Grasser1, 1TU
Wien and 2Ioffe Physical-Techn. Inst. (Austria)

PS-8-12
Effect of Remote Doping on Photoluminescence and Carrier Spin Dynamics in InGaAs
Quantum Dots
D. Yamazaki, S. Chen, J. Takayama and A. Murayama, Hokkaido Univ. (Japan)
PS-8-13
Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Sulfurization
Annealing Using (t-C4H9)2S2
S. Ishihara1, K. Suda1, Y. Hibino1, N. Sawamoto1, T. Ohashi2, S. Yamaguchi2, K. Matsuura2, H.
Machida3, M. Ishikawa3, H. Sudoh3, H. Wakabayashi2 and A. Ogura1, 1Meiji Univ., 2 Tokyo Techand 3Gas-phase Growth Ltd. (Japan)

PS-9-4All Oxide All Solution-processed Active Matrix Thin-film Transistor for Electrophoretic
Display Application
T.T. Phan1,2, S. Inoue1, H. Koyama3, Y. Takamura1,2 and T. Shimoda1, 1JAIST, 2 JST-CREST and
3
Toppan Printing Co., Ltd. (Japan)
PS-9-5
Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate
Voltage Modulation
N. Matsuo1, S. Nakamura1, T. Takada1, A. Heya1, K. Yamana1, T. Sato2, S. Yokoyama2 and Y.
Omura3, 1Univ. of Hyogo, 2 Hiroshima Univ. and 3Kansai Univ. (Japan)

PS-8-14Large Effect of Etchant on Electrical Performance of Transferred CVD Graphene
T.W. Chen1, Y.P. Hsieh1 and M. Hofmann2, 1National Chung Cheng Univ. and 2NCKU (Taiwan)
PS-8-15
Improved Synthesis and Air Stability of Two-Dimensional Material GeH
N. Shao, R.R. Liang, C.C. Sun, L. Xiao, J. Wang and J. Xu, Tsinghua Univ. (China)

PS-9-6
A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Fieldeffect Transistors
G. Hu, S. Hu, L. Wang, R. Liu and L. Zheng, Fudan Univ. (China)

PS-8-16
Topography and Atomic Strain Deformation of Epitaxial Graphene on Si-terminated 6H-SiC
Extended to the Few Microns Order
G. Rius1, N. Mestres2, Y. Tanaka1, O. Eryu1 and P. Godignon3, 1Nagoya Inst. of Tech., 2 ICMABCSIC and 3IMB-CNM-CSIC (Japan)

PS-9-7
A Concept of Heterogeneous Circuits with Epitaxial Tunnel Layer Tunnel FETs
J.H. Hung, P.Y. Wang, B.Y. Tsui and C.H. Yang, NCTU (Taiwan)

PS-8-17Synthesis of Si-based Nanostructures by Extraction of Metallic Atoms from Silicides by
Inositol Hexakisphosphate
K. Sasaki1, K. Sano1, X. Meng1, H. Suzuki1, T. Kobayashi2, T. Kuno3 and H. Tatsuoka1, 1Shizuoka
Univ., 2 Koba Tech. and 3Kankyo Science (Japan)

PS-9-8Gate-Stacking Engineering for Insta Ge/SiO2/SiGe MOS Devices
P.H. Liao1, W.T. Lai2, S.C. Luo1, K.C. Yang1, T. George1 and P.W. Li2, 1National Central Univ. and
2
NCTU (Taiwan)

PS-8-18
Temperature Dependence of Electrical Transport Properties of La 4 BaCu 5-x Co x O 13+δConducting Oxide Thin Films
A. Tsuruta1, Y. Tsujioka2, Y. Yoshida2, I. Terasaki1,2 and W. Shin1, 1AIST and 2Nagoya Univ. (Japan)

PS-9-9Novel Design of Electrostatic Lens Potential for Improving Bending Curvature andTransmission Probability of Drive Current for Vertical Body Channel MOSFET
M. Muraguchi1,2,3 and T. Endoh1,2,3, 1Tohoku Univ., 2 CIES, Tohoku Univ. and 3JST-ACCEL (Japan)

PS-8-19
Solvent Effect on Zinc Oxide Crystallites Shape using Submerged Photo-Synthesis
M. Jeem, K. Kawaguchi, A.M.R. Hamzah, J. Ishioka, S. Yatsu, T. Shibayama and S. Watanabe,
Hokkaido Univ. (Japan)

PS-9-11
Geometry-dependent Phase/Stress and Electrical Resistivity in Nickel-Silicide Nanowires
C.C. Wang1, Y.Y. Hsiao1, I.H. Chen1, W.T. Lai1, T. George1 and P.W. Li2, 1National Central Univ.
and 2NCTU (Taiwan)

PS-8-20
Study on Thermal Durability of AZO/Ag(Al)/AZO Transparent Conductive Film
Y. Sugimoto1, K. Igarashi1 and A. Kikuchi1,2, 1Sophia Univ. and 2Sophia Nanotech. Res. Center(Japan)PS-9-12
Changes in Morphology and Local Conductance of GeTe-Sb2Te3 Superlattice Films on Silicon
Made by Scanning Probe Microscopy in a Lithography Mode
L. Bolotov1,2, T. Tada1,2, Y. Saito1,2 and J. Tominaga1,2, 1AIST and 2JST-CREST (Japan)

PS-8-21
Study on Microstructure of Gd2O3 and Nd2O3 Compound Film Formed by RF Magnetron
Sputtering
Z. Wang, L. Xiao and J. Wang, Tsinghua Univ. (China)

Area 10: Organic Materials Science, Device Physics, and Applications(12 papers)

PS-10-1
Temperature Dependence Analysis of Printed Organic MOSFET
H. Zenitani1, T.K. Maiti2, T. Hayashi1, Y. Tanimoto1, K. Sato1, L. Chen2, H. Kikuchihara2, M. Miura
Mattausch2 and H.J. Mattausch1, 1Hiroshima Univ. and 2HiSIM, Hiroshima Univ. (Japan)

PS-8-23
Epitaxial Growth of Yttrium Monoxide Thin Film
K. Kaminaga1,2, R. Sei1,2, T. Fukumura2,3 and T. Hasegawa1,3, 1Univ. of Tokyo, 2 Tohoku Univ. and3
JST-CREST (Japan)

PS-10-2
Control of Threshold Voltage in Organic Thin-film Transistors by Modifying Gate ElectrodeSurface with MoOX Aqueous Solution and Its Application to Circuits
R. Shiwaku1, Y. Yoshimura1, Y. Takeda1, K. Fukuda1,2, D. Kumaki1 and S. Tokito1, 1Yamagata Univ.
and 2JST-PRESTO (Japan)

PS-8-24
Behavior of Si Atoms, Ge Atoms and Vacancies for Flash Lamp Annealing
A. Heya1, N. Matsuo1, S. Hirano1, Y. Nakamura2, T. Yokomori2 and M. Yoshioka2, 1Univ. of Hyogo
and 2USHIO Inc. (Japan)
PS-8-25
Low Temperature Liquid Phase Epitaxy of YBa2Cu3OY Films by the Molten KOH Method
S. Funaki, Y. Yamada, R. Okunishi and Y. Miyachi, Shimane Univ. (Japan)- 34 -

PS-10-3
Solution-Processed Hybrid Organic-Inorganic Complementary Thin-Film Transistor
Inverter
H.J. Cheong, S. Ogura, K. Kuribara, M. Yoshida, H.. Ushijima, N. Fukuda and S. Uemura, AIST
(Japan)PS-11-8
Characteristics of N2/H2 Annealed Ni-Co Nanowires Upon Immobilized Affinity of Pentahistidine-tagged Protein
C.-Y. Ho, T.-H. Lin and Y.-J. Chang, Chung Yuan Christian Univ. (Taiwan)
PS-11-9
A Fluorescent Arrayed Biosensor Using Liposome Encapsulating Calcein for Discriminationof Different Target Proteins by Principal Component Analysis
R. Imamura1, Z. Zhang1, T. Shimanouchi2, N. Murata1, K. Yamashita1, M. Fukuzawa1 and M. Noda1,
1
Kyoto Inst. of Tech. and 2Okayama Univ. (Japan)

PS-10-4Fabrication of Organic Field Effect Transistors Based on Printing Techniques and the
Improvement of FET Properties by the Insertion of Solution Processable Buffer Layers
A. Kanamori and E. Itoh, Shinshu Univ. (Japan)
PS-10-5
All-Solution-process Red Phosphorescent and Blue Fluorescent Organic Light-emitting
Diodes by Blade Coating
Y.F. Chang1, H.F. Meng1, H.W. Zan1, H.W. Lin2, K.T. Wong3, H.L. Huang4 and S.F. Horng2, 1NCTU,
2National Tsing Hua Univ., 3 National Taiwan Univ. and 4e-Ray Optoelectronics Tech. Co., Ltd.
(Taiwan)

PS-11-10
The Annealing Effect of BaSrTiO 3 Membrane in O 2 and N 2 Ambient for ElectrolyteInsulator-Semiconductor
Y.L. Su, C.H. Kao, C.F. Lin, C.W. Chang, C.L. Chang, S.W. Chang and Y.X. Huang, Chang Gung
Univ. (Taiwan)
PS-11-11
Controlled Decoration of Double Junction N +/N -/N + Polysilicon Nanobelt Device with
Platinum for Hydrogen Gas Sensor Application
N.A. Tran, C.H. Sang, F.M. Pan and J.T. Sheu, NCTU (Taiwan)

PS-10-6
Novel Textile Actuator Having a Large Displacement Consisting of Electrospun Poly(DLLactic Acid) Fibrous Film and Its Mechanism
T. Nobeshima1, Y. Ishii2, H. Sakai3, S. Uemura1 and M. Yoshida1, 1AIST, 2 Toyohashi Univ. of Tech.
and 3JAIST (Japan)

PS-11-12 (Late News)
Cross-Talk Immunity of Gold-Nanoparticle Incorporated PEDOT:PSS Pressure Sensors with
2×2 Cross-Point Array Structure
R.S. Karmakar1, Y. Fu1, S.H. Chen1, J.C. Wang1, Y.J. Lu2, C.Y. Huang2, K.C. Wei2 and C.S. Lai1,
1
Chang Gung Univ. and 2Chang Gung Memorial Hospital (Taiwan)

PS-10-7
Deposition Characteristics of Small Molecule Organic Thin Film (CBP:PBD:TPD:Ir(Mppy)3)
by Modified Electrospray Deposition
Y. Niinuma1, D. Nishi1, J. Ishino1 and A. Kikuchi1,2, 1Sophia Univ. and 2Sophia Nanotech. Res.
Center (Japan)

PS-11-13 (Late News)
Improvement of Filter-less Fluorescence Sensor by the Surface Planarization of Polysilicon
Photogate
Y.J. Choi, K. Takahashi, M. Matsuda, T. Hizawa, Y. Moriwaki, F. Dasai, Y. Kimura, I. Akita, T.
Iwata, M. Ishida and K. Sawada, Toyohashi Univ. of Tech. (Japan)

PS-10-8
Bis(thiophenyl)benzothiadiazole Derivatives as Hole-Transporting Red Emitters for Efficient
Solution-Processed Pure Red Electroluminescent Devices
V. Promarak1, A. Thangthong2, S. Namuangruk3, T. Sudyoadsuk1, T. Kaewin2, S. Jungsuttiwong2 and
A. Prachumrak1, 1Vidyasirimedhi Inst. of Sci. and Tech., 2 Ubon Ratchathani Univ. and 3NANOTEC(Thailand)

Area 12: Spintronics Materials and Devices

PS-10-9 (Late News)
Lower Power Consumption Technique on Organic Circuits for Roll-to-roll Process.
K. Kuribara1, K. Kakita2, Y. Tanaka2 and M. Yoshida1, 1AIST and 2Ube Indus., Ltd. (Japan)

PS-12-1
Anti-Damping Torque Engineering in Trilayer Spin-Hall System
G. Gupta, M.B.A. Jalil and G. Liang, NUS (Singapore)

PS-10-10 (Late News)
Achieving Low-Program Voltage and High-Stability in Controllable Organic Complementary
Logic Circuits by Photoactive Gate Dielectric
T.T. Dao 1, H. Sakai 2, K. Ohkubo 3, S. Fukuzumi 4 and H. Murata 2, 1Univ. of Transport andCommunications, 2 JAIST, 3 Osaka Univ. and 4Ewha Womans Univ. (Vietnam)

PS-12-2
Enhancement of Gilbert Damping in Trilayer Synthetic Antiferromagnets via Dynamic
Exchange Interactions
T. Chiba1, G.E.W. Bauer1,2,3 and S. Takahasi1, 1IMR, Tohoku Univ., 2 WPI-AIMR, Tohoku Univ. and3
Kavli Inst. of NanoScience Delft Univ. of Tech. (Japan)

PS-10-11 (Late News)
Molecular Dynamics and Electronic Structure Studies of Organic Semiconductors under
Mechanical Stress
K. Yamakawa, W. Xie., T. Yanase, T. Nagahama and T. Shimada, Hokkaido Univ. (Japan)

PS-12-3
A Pulse Current Synchronization Scheme for Spin Torque Nano Oscillators
K. Nakada1, K. Miura2 and T. Kimura3, 1Hiroshima City Univ., 2 Kwansei Gakuin Univ. and3
Kyushu Univ. (Japan)

PS-10-12 (Late News)
Achieving Efficient Solution-Processed Small Molecular Solar Cells via Non-halogenatedSolvent
C.W. Chu1,2 and M.E. Farahat1, 1National Tsing Hua Univ. and 2Academia Sinica (Taiwan)
Area 11: Sensors and Materials for Biology, Chemistry and Medicine(20 papers)

PS-12-4Spin Transport in Magnetic Tunnel Junctions with the Insertion of [6]Cyclo-2,7-naphthylenes
Organic Semiconductor
K. Suzuki1, T. Izumi2,3, X. Zhang1, A. Sugihara1, S.T. Pham1, H. Taka2,3, S. Sato1,2, H. Isobe1,2 and S.
Mizukami1, 1Tohoku Univ., 2 JST-ERATO and 3KONICA MINOLTA, Inc. (Japan)(13 papers)

PS-12-5
Bias Voltage Dependence of the Spin-dependent Tunneling Conductance of Co2(Mn,Fe)SiBased Magnetic Tunnel Junctions Exhibiting Giant Tunneling Magnetoresistances
K. Moges, B. Hu, H.x. Liu, T. Uemura and M. Yamamoto, Hokkaido Univ. (Japan)

PS-11-1
IGZO Substrate for PH Detection in LAPS with High Photo Response
C.H. Chen, C.M. Yang, L.B. Chang, J.C. Wang and C.S. Lai, Chang Gung Univ. (Taiwan)

PS-12-6
Temperature Dependence of Spin-Dependent Tunneling Conductance of Magnetic Tunnel
Junctions with Highly Spin-Polarized Electrodes
B. Hu, Kidist. Moges, H.x. Liu, Y. Honda, T. Uemura and M. Yamamoto, Hokkaido Univ. (Japan)

PS-11-2
Temperature-Lowered Plasma Treatment by Controlling Direction of Supplying Reactive
Species for Biological Application
Y. Nakayama1, S. Kumagai1, H. Hashizume2, T. Ohta3, M. Ito3, M. Hori2 and M. Sasaki1, 1Toyota
Tech. Inst., 2 Nagoya Univ. and 3Meijo Univ. (Japan)

PS-12-7
Exchange Bias Effects in Ni2MnAl/Ferromagnet Film Bilayers
T. Kubota, T. Tsuchiya, T. Sugiyama and K. Takanashi, Tohoku Univ. (Japan)

PS-11-3
A Friendly Portable 2D Chemical Imaging System
C. Ren1, C.G. Lyu1, H.L. Liu2, Y.M. Chen2, Y.C. Hsu2, C.M. Yang2 and C.S. Lai2, 1Tianjin Univ. and2
Chang Gung Univ. (China)

PS-12-8
Theoretical Sensitivity in Magnetic Field Sensors using a Spin-torque Oscillator
Y. Suzuki1,2, A. Tulapurkar3, H. Tomita1, E. Tamura1, H. Kubota2, S. Miwa1, A. Fukushima2 and S.
Yuasa2, 1Osaka Univ., 2 AIST and 3IIT Bombay (Japan)

PS-11-4
High Sensitive Biosensor using Si Photonic Crystal Cavity Resonators
A.K. Sana, K. Honzawa, Y. Amemiya and S. Yokoyama, Hiroshima Univ. (Japan)

PS-12-9Nanoscale Magneto-Resistance Sensors with Improved Sensitivity using Resonant Tunneling
Magnetic Tunnel Junctions
N. Chatterji, A. Sharma, A. Tulapurkar and B. Muralidharan, IIT Bombay (India)

PS-11-5
Development of a Novel Device for Allergy Test Based on Semiconductor Principle
H.Y. Yang1, A. Saito1, T. Kajisa2, Y. Yanase3 and T. Sakata1, 1Univ. of Tokyo, 2 PROVIGATE Inc. and3
Hiroshima Univ. (Japan)

PS-12-10
Experimental Demonstration of Long-Distance Propagation of a Surface Plasmon on the
Surface of a Ferromagnetic Metal
V. Zayets, H. Saito, S. Yuasa and K. Ando, AIST (Japan)

PS-11-6
Nanosphere Lithography (NSL) on Au Nanopatterned Electrodes for Electrochemical DNA
Detection
A. Purwidyantri1, C.H. Chen2, C.C. Chiou1, Y.C. Tian3 and C.S. Lai1, 1Chang Gung Univ., 2 National
Taiwan Univ. of Sci. and Tech. and 3Chang Gung Memorial Hospital (Taiwan)

PS-12-11
Influence of Oxygen Partial Pressure on Electrical and Magnetic Characteristics of Spinel
CoFe2O4 Thin Films
M. Araki, H. Kajita, N. Takahashi, T. Yanase, T. Shimada, H. Ohta and T. Nagahama, Hokkaido
Univ. (Japan)

PS-11-7
Highly Sensitive pH-EGFET Sensors with Oxygen-Plasma-Treated Reduced Graphene Oxide
Films Sprayed on the Reverse Pyramid Substrate
Y.R. Li, S.H. Chang, W.L. Tsai, C.T. Chang and H.C. Cheng, NCTU (Taiwan)- 35 -

PS-12-12
Magnetic and Electronic Properties of Epitaxial Mn2CoAl Films
K. Ueda, S. Hirose, S. Aichi, T. Hajiri and H. Asano, Nagoya Univ. (Japan)
PS-12-13
Crystallographic Properties of L10 Ordered FeNi Thin Films Fabricated by Sputtering and
Rapid Thermal Annealing
M. Mizuguchi1, T.Y. Tashiro1, T. Koganezawa2 and K. Takanashi1, 1Tohoku Univ. and 2SPring-8/
JASRI (Japan)

PS-13-11
Mechanisms of Polarization Switching in Graphene Oxide and Poly(Vinylidene Fluoride)Graphene Oxide Films
Z.Y. Jiang1, G.P. Zheng1, K. Zhan2 and Z. Han1,2, 1The Hong Kong Polytechnic Univ. and 2USST(China)PS-13-12
Energetics of H2O Encapsulated in Fullerenes under an Electric Field
J. Sorimachi and S. Okada, Univ. of Tsukuba (Japan)

PS-12-14
Experimental Analysis of Shubnikov-De Haas Oscillation for Slightly Asymmetric InGaAs/
InAlAs Double Quantum Wells
H. Chen1, T. Matsuura1, A. Sawada1, T. Yamashige1, B. Liu1, H. Sugiyama2, Y. Sekine2 and T. Koga1,
1
Hokkaido Univ. and 2NTT Corp. (Japan)

PS-13-13
Top-Gated Epitaxial Bilayer MoSe2 Transistors on AlN Wafers & the Impact of Top-down
Process-Induced Damage
M. Manfrini1, S. Sutar1, S. Brems1, P. Tsipas2, K.E. Aretouli2, E. Xenogiannopoulou2, A. Dimoulas2,
A.C. Mocuta1, I.P. Radu1 and A. Thean1, 1IMEC and 2NCSR Demokritos (Belgium)

PS-12-15
Real Space Analysis of Classical Diffusion and Weak Localization of Electrons in Mesoscopic
Systems from Boltzmannian Picture
A. Sawada and T. Koga, Hokkaido Univ. (Japan)

PS-13-14
XPS Study of HfO2 Growth on 2H-MoS2 Substrate
C.P. Chen1, S.W. Ong2, J.W. Chai3, Z. Zhang3, S.J. Wang3, J.S. Pan3 and E.S. Tok1,2, 1NUS, 2 YaleNUS College and 3Inst. of Material Res. and Eng. (Singapore)

PS-12-16
Electron G-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free
Neutral Beam Etching Process
Y.C. Tsai1, L.W. Yang1, Y. Li1, O. Voskoboynikov1, A. Higo2, A. Murayama3 and S. Samukawa2,
1
NCTU, 2 Tohoku Univ. and 3Hokkaido Univ. (Taiwan)

PS-13-15
Electrical and Optical Properties of Co-doped and Undoped MoS2 Crystals
C.C. Huang1, T.S. Ko1, D.Y. Lin1, Y.J. Ruan1 and Y.S. Huang2, 1National Univ. of Changhua Edu.
and 2National Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-12-17
Transient Analysis of Oblique Hanle Signals Observed in GaAs
Z.c. Lin, M. Yamamoto and T. Uemura, Hokkaido Univ. (Japan)

PS-13-16
MoS 2 FET based Oxygen Sensors with Gate Voltage Stress Induced Performance
Enhancement
Y. Tong, Z. Lin, J.T.L. Thong, D.S.H. Chan and C. Zhu, NUS (Singapore)

PS-12-18
Influence of Si Surface on Spin Accumulation and Transport Signals in CoFe/MgO/n+-Si
Junctions
M. Ishikawa1, H. Sugiyama1, T. Inokuchi1, K. Hamaya2, N. Tezuka3 and Y. Saito1, 1Toshiba Corp., 2
Osaka Univ. and 3Tohoku Univ. (Japan)

PS-13-17
Theoretical Study of Multiatomic Vacancies in Hexagonal Boron Nitride
S. Urasaki and H. Kageshima, Shimane Univ. (Japan)
PS-13-18
Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires
F. Ishizaka1, Y. Hiraya1, K. Tomioka1,2 and T. Fukui1, 1Hokkaido Univ. and 2JST-PRESTO (Japan)

PS-12-19
Te m p e r a t u re D e p e n d e n c e s o f S p i n - i n j e c t i o n D y n a m i c s a n d S p i n - p o l a r i z e dElectroluminescence in InGaAs Quantum Dots
Y. Nomura1, Y. Akei1, J. Takayama1, T. Kiba2, A. Subagyo1, T. Yamamura1, D. Yamazaki1, K. Sueoka1
and A. Murayama1, 1Hokkaido Univ. and 2Kitami Inst. of Tech. (Japan)

PS-13-19
Hybrid Nanoimprint SiNW-based Solar Cell Fabrication with Efficiency Enhancement byHydrogen Annealing
W. Jevasuwan, K. Nakajima, Y. Sugimota and N. Fukata, NIMS (Japan)

PS-12-20
Spin Depolarization Induced by Low Electric Fields in Undoped InGaAs/AlGaAs Multiple
Quantum Well
Y.H. Chen, L.P. Zhu and Y. Liu, Chinese Academy of Sciences (China)
Area 13: Applications of Nanotubes, Nanowires, and Graphene

PS-13-20
Stability and Electronic Structures of Group IV Semiconductor Alloy Nanosheets: a First
Principles Study
T. Akiyama, K. Nakamura and T. Ito, Mie Univ. (Japan)(22 papers)

PS-13-21
Fundamental Strategy to Succeed a Vapor-Liquid-Solid Nanowire Growth
T. Yanagida, K. Nagashima, H. Yong, F. Zhuge, M. Kanai and A. Klamchuen, Kyushu Univ. (Japan)

PS-13-1
Direct Observation of Evolution in Graphene Layers by Electrical Properties
C.W. Huang, J.Y. Chen and W.W. Wu, NCTU (Taiwan)

PS-13-22
Axial Strain Effects on Phonon Thermal Transport in Silicon Nanowires
J. Hattori, V. Poborchii and T. Tada, AIST (Japan)

PS-13-2
Bandgap Engineering of Graphene by Mean of Adsorption of Defective Graphene
K. Kishimoto and S. Okada, Univ. of Tsukuba (Japan)

PS-13-23 (Late News)
Graphene Nanoribbon Field Effect Transistor Designing from Numerical Simulations
K. Takashima, S. Konabe and T. Yamamoto, Tokyo Univ. of Science (Japan)

PS-13-3
Al2O3/HfO2/Al2O3/Graphene Charge Trap Flash Device with a Self-aligned Gate
K.H. Lee and O.H. Kim, POSTECH (Korea)

Area 14: Power Devices and Materials

PS-13-4
Radical Spin Interaction of Graphene Flakes Embedded into h-BN Sheet
M. Maruyama and S. Okada, Univ. of Tsukuba (Japan)(19 papers)

PS-14-1
Minimization of Reverse Recovery Charge and Forward Voltage of Silicon Pin Diodes
Y. Yamashita and S. Machida, Toyota Central R&D Labs., Inc. (Japan)

PS-13-5First-Principles Calculations for Diffusion Mechanism of Li Atom from Li(EC)4 to Interlayerof Graphite with Hydrogen/Carbonylic Edge Terminations
T. Kawai1,2, S. Okada2 and M. Otani3, 1NEC Corp., 2 Univ. of Tsukuba and 3AIST (Japan)

PS-14-2
The Resistance Effect on Turn-on Speed of Resistor Assisted Trigger SCR Stacking Structure
S.S. Yen1, C.C. Fan1, Y.P. Lan1, C.Y. Chang1, Y.C. Chiu1, Z.W. Jiang2, S.C. Chang2, L.Y. Hung2 andC.C. Tsai2, 1NCTU and 2Himax Tech. Inc. (Taiwan)

PS-13-6
Study of the Electronic Properties and Strain sensitivity of Chemical Vapor DepositionGrown Graphene from C2H2
M. Yang, S. Sasaki, M. Ohnishi, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-14-3
Impact of 3D Stacking Silicon on Diamond Substrate for the ESD Protection Device
Y. Ikeda, K. Nakagawa and S. Matsumoto, Kyushu Inst. of Tech. (Japan)

PS-13-8
Thermal Interface Materials with Vertically-aligned Carbon Nanotubes and Their Thermal
Properties
S. Hirose1, M. Norimatsu1, K. Suzuki1, Y. Yagishita1, Y. Suwa2, T. Kurosawa2, K. Kawamura2, Y.
Mizuno1, D. Kondo1 and T. Iwai1, 1Fujitsu Labs. Ltd. and 2Shinko Electric Industries Co., Ltd.
(Japan)PS-14-4
The Heat Performance Study of Nanocrystal Diamond Film Used in a Thin Film Device
S. Duangchan1, Y. Koishikawa1, R. Shirahama1, K. Oishi1, A. Baba1, S. Matsumoto1 and M.
Hasegawa2, 1Kyushu Inst. of Tech. and 2AIST (Japan)
PS-14-5
Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar
Transistor Structures Fabricated by Surface Activated Bonding
J. Liang1, S. Shimizu1, S. Nishida1, N. Shigekawa1 and M. Arai2, 1Osaka City Univ. and 2New JRC(Japan)PS-13-9Competition and Cooperation between External and Internal Electric Fields for Carrier
Injection in Carbon Nanotubes with Defects
U. Ishiyama1, N.T. Cuong2 and S. Okada1, 1Univ. of Tsukuba and 2NIMS (Japan)
PS-13-10
Solution Processible Metal Nanoparticle Embedded Reduced Graphene Oxide for Stretchable
and Conductive ElectrodeY. Yoon1 and HL. Lee1, 2, 1IBS Sungkyunkwan Univ. and 2Sungkyunkwan Univ. (Korea)

PS-14-6
Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal
Oxidation
H. Xu1,2, Q. Yang1, M. Zhao1, S. Wang1, Z. Jin1, X. Liu1, A. Chanthaphan2, Y. Cheng2, T. Hosoi2, T.
Shimura2 and H. Watanabe2, 1IMECAS and 2Osaka Univ. (China)- 36 -

PS-14-7
Removal of Near-Interface Oxide Traps at SiO2/SiC Interface by Post-Oxidation Annealingin Reducing Ambient
H. Kajifusa, H. Hirai, Y. Fujino and K. Kita, Univ. of Tokyo (Japan)

PS-15-5
Efficiency Enhancement of Dye-sensitized Solar Cells by Flower-like Zinc Oxide
F.I. Lai1, M.Y. Hsieh2 and S.Y. Kuo2, 1Yuan Ze Univ. and 2Chang Gung Univ. (Taiwan)
PS-15-6
Organic Ultraviolet Photodetectors with m-MTDATA:LiF Nanocomposite Layer
R.W. Chuang1, P.Y. Su1 and C.H. Chen2, 1NCKU and 2Cheng Shiu Univ. (Taiwan)

PS-14-8
Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring
Depletion-layer Capacitance
H. Matsushima, H. Okino, K. Mochizuki and R. Yamada, Hitachi Ltd. (Japan)

PS-15-7
First-principles Study of Defect Formation in Photovoltaic Semiconductor Cu2SnS3
H. Nishihara, T. Maeda, A. Shigemi and T. Wada, Ryukoku Univ. (Japan)

PS-14-9
Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss
D. Navarro1, I. Pesic1, Y. Morikawa1, Y. Furui1 and M. Miura Mattausch2, 1Silvaco Japan and
2
Hiroshima Univ. (Japan)

PS-15-8
A Look into Plasmonic Energy Transfer in CIGS Solar Cells via Ultrabroadband
Femtosecond Pump-probe Spectroscopy
J.X. Li1, S.C. Chen1, A. Yabushita1, S.H. Tang1, D.P. Tsai2, H.C. Kuo1, K.H. Wu1 and T. Kobayashi1,
1
NCTU and 2Academia Sinica (Taiwan)

PS-14-10
Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient
Capacitance Measurements at Various Temperatures
Y. Fujino and K. Kita, Univ. of Tokyo (Japan)

PS-15-9
Investigation of the Optical Absorption in Si/SiO2 Superlattice for the Application to Solar
Cells
S. Yamada1, M. Konagai1,2 and S. Miyajima3, 1JST, 2 Tokyo City Univ. and 3Tokyo Tech (Japan)

PS-14-11
Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy
M. Shingo1, J. Liang2, N. Shigekawa2, M. Arai3 and K. Shiojima1, 1Univ. of Fukui, 2 Osaka City
Univ. and 3New JRC (Japan)

PS-15-10
Si Nanofilm Efficient UV Solar Absorber
V. Poborchii1, Y. Morita1, T. Tada1, P. Geshev2, Z. Utegulov3 and A. Volkov3, 1AIST, 2 Inst. of
Thermophysics of the Russian Academy of Sciences and 3Nazarbayev Univ. (Japan)

PS-14-12
Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by
Surface Activated Bonding
N. Shigekawa1, J. Liang1, M. Shingo2, M. Arai3 and K. Shiojima2, 1Osaka City Univ., 2 Univ. of
Fukui and 3New JRC (Japan)

PS-15-11
Hydrogenated Nanocrystaline Cubic Silicon Carbide/c-Si Heterojunction Solar Cell with
Triple Anti-Reflection Coating
E.O. Ateto and S. Miyajima, Tokyo Tech (Japan)

PS-14-13
Special Features in Stress Degradation of SiC-MOSFETs Observed in I-V Characteristics
E. Murakami, K. Oda and T. Takeshita, Kyushu Sangyo Univ. (Japan)

PS-15-12
A New Interdigitated Nanopillar HIT Solar Cell with 26.09% Efficiency Achieved by Using
Silicon-Carbide-based Window Layer
C.C. Lai, J.T. Lin, T.H. Huang, J.M. Syu and B.C. Yan, National Sun Yat-sen Univ. (Taiwan)

PS-14-14
Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave
Plasma CVD
T. Suto1, J. Yaita1,2, T. Iwasaki1,2,3, M. Natal4, S.E. Saddow4 and M. Hatano1,2,3, 1Tokyo Tech, 2 JSTCREST, 3 JST-ALCA and 4Univ. of South Florida (Japan)

PS-15-13
Development of Wider Bandgap n-type a-SiOX:H for High Efficiency a-Si:H Single Junction
and a-Si:H/a-Si1-XGeX:H Tandem Solar Cells
P.W. Chen, L.H. Lai, C.H. Hsu and C.C. Tsai, NCTU (Taiwan)

PS-14-15
Trench-channel MOSFET using C-H Diamond Surface
T. Saito, M. Kobayashi, T. Yamada, D. Xu, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa
and H. Kawarada, Waseda Univ. (Japan)

PS-15-14
Local Surface Potential on Amorphous Silicon Thin Film Solar Cells by Kelvin ForceMicroscope
T. Itoh, T. Ito, H. Kuriyama and S. Nonomura, Gifu Univ. (Japan)

PS-14-16
Solution Growth of AlN Single Crystal on Sapphire using Multi-Component Solvent
Designed by Thermodynamic Calculation
S. Harada, M. Nagaya, S. Watanabe, M. Chen, Y. Takeuchi, K. Aoyagi, M. Tagawa and T. Ujihara,
Nagoya Univ. (Japan)

PS-15-15
Detailed-Balance-Limit Efficiencies of Solar Cells with Intermediate Bands and Carrier
Multiplication
K. Tanabe, Kyoto Univ. (Japan)

PS-14-17 (Late News)A 150 a SiC VMOSFET with 6 x 6 mm2 Chip Size on a 150 mm C-face in-house Epitaxial
Wafer
Y. Saitoh, H. Itoh, K. Wada, M. Sakai, T. Horii, K. Hiratsuka, S. Tanaka and Y. Mikamura,
Sumitomo Electric Industries, Ltd. (Japan)

PS-15-16
A Simple Optical Model Well Explains Plasmonic-Nanoparticle-Enhanced Spectral
Photocurrent in Optically Thin Solar Cells
K. Tanabe, Kyoto Univ. (Japan)

PS-14-18 (Late News)
Investigation of Conventional Bipolar Logic Technologies in 4H-SiC for Harsh Environment
Applications
H. Elgabra, A. Siddiqui and S. Singh, Khalifa Univ. of Sci., Tech. & Res. (UAE)

PS-15-17
InGaP/GaAs Heterojunction Phototransistor Powered by an On-Chip GaAs Solar Cell for
Energy Harvesting
P.H. Than, K. Uchida and S. Nozaki, Univ. of Electro-Communications (Japan)

PS-14-19 (Late News)
Investigation of Deep Levels in Diamond Based Radiation Detector by Transient Charge
Spectroscopy with Focused Heavy Ion Microbeam
Y. Ando1, 2, Y. Kambayashi1, 2, W. Kada1, S. Onoda2, T. Makino2, S. Sato2, H. Umezawa3, Y. Mokuno3,
S. Shikata4, O. Hanaizumi1, T. Kamiya2 and T. Ohshima2, 1Gunma Univ., 2 JAEA, 3 AIST and
4
Kwansei Gakuin Univ. (Japan)

PS-15-18 (Late News)
Behavior of the Potential-Induced Degradation for Photovoltaic Modules Fabricated using
Flat Mono-Crystalline Silicon Cells with Different Surface Orientations
S. Yamaguchi1, A. Masuda2 and K. Ohdaira1, 1JAIST and 2AIST (Japan)

Area 15: Photovoltaic Materials and Devices

PS-15-19 (Late News)
Degradation of Backsheets for Crystalline Photovoltaic Modules under Damp Heat
D. Kim, W. Hong and C. Oh, Korea Electronics Technology Institute (Korea)(20 papers)

PS-15-20 (Late News)
Optimization of Etching Paste Process by Screen Printing for Recycling Crystalline Silicon
Solar Wafer from End-of-life Photovoltaic Modules
J. Shin and J. Jeong, Korea Electronics Technology Institute (Korea)

PS-15-1
Exciton and Bandgap Energies of Hybrid Perovskite CH3NH3PbI3
Y. Nakamura1, J. Sano1, T. Matsushita1,3, Y. Kiyota2, Y. Udagawa2, H. Kunugita2,3, K. Ema2,3 and T.
Kondo1,3,4, 1Univ. of Tokyo, 2 Sophia Univ., 3 JST-ALCA and 4RCAST, Univ. of Tokyo (Japan)
PS-15-2
Optical Pumped Lasing in Solution Proccessed Perovskite Semiconducting Materials: Self
Assembled Microdisk Lasing
F. Sasaki, H. Mochizuki, Y. Zhou, Y. Sonoda and R. Azumi, AIST (Japan)
PS-15-3
Shape-Controlled Preparation of MAPbI3 Nanoparticles by Ionic Liquid-Assisted Simple
Spin-coating Method with Tunable Optical Absorption
Md. Shahiduzzaman, K. Yamamoto, Y. Furumoto, T. Kuwabara, K. Takahashi and T. Taima,
Kanazawa Univ. (Japan)
PS-15-4
Field Test of Dye-Sensitized Solar Cells by Utilizing a Power Delivery CMOS Integrated
Circuits
J. Miyamoto1, M. Sato1, H. Itoh1, M. Tanaka1, A. Kato1, S. Hasegawa1, Y. Suzuki2 and F. Munakata2,
1
Chubu Univ. and 2Tokyo City Univ. (Japan)- 37 -