Infineon EiceDRIVER™ gate driver ICs
Selection guide 2019

Every switch needs a driver

www.infineon.com/gatedriver
www.infineon.com/gdbrochureDear Customer and Partner,
Power electronics applications employ power device switches. And powerdevice switches require optimum gate drive solutions.
Applications such as battery-driven power tools, small and major home
appliances, computing and telecom servers, EV charging, solar, and robotics
all have special requirements. An optimum gate drive configuration isessential for all power switches, whether they are in discrete form or in a
power module. State-of-the art discrete switch families including CoolMOS™
and OptiMOS™ silicon MOSFETs, TRENCHSTOP™ IGBTs, CoolGaN™ gallium
nitride HEMTs, and CoolSiC™ silicon carbide MOSFETs as well as open-frame
modules such as Easy and Econo power modules, require tuning of gate drive
circuits to take full advantage of their capacity and capabilities. One of themost common questions for our new wide-bandgap power devices such as
CoolGaN™ or CoolSiC™ is “how do you drive one of these?”
Infineon gate drivers provide a wide range of typical output current options,from 0.1-A up to 10-A, suitable for any power device size. Robust gate drive
protection features such as fast short-circuit protection, programmabledead-time, shoot-through protection, and active shutdown, make the drivers
well-suited for all power devices, including CoolGaN™ and CoolSiC™. Infineon
gate drivers also provide advanced features such as integrated bootstrap
diodes, enable and fault reporting functions, input filters, OPAMP and DESAT
functions. Active Miller clamps and separate sink and source outputs options
also provide design flexibility for all applications. Infineon EiceDRIVERTM familyof gate drivers makes it easier for our customers to drive all power switches
and power modules. For galvanic isolation requirements, both basic andreinforced isolated product options are available.
We do what we promise. That’s quality made by Infineon. With our modern
and proactive quality management system, we support the operational
excellence of Infineon by translating customer requirements into actions. We
are committed to being the best in class on cost, quality and time to market.
Our quality guidelines serve as a security fence to prevent productivity
measures that compromise our quality.
Infineon is a world leader in power semiconductor solutions that makeyour life easier, safer, and greener. We empower the efficient generation,transmission and consumption of electrical energy. In short, we empower aworld of unlimited energy. The EiceDRIVER™ Gate Driver Selection Guide
2019 provides innovative and optimum gate driver solutions to takefull advantage of our state-of-the-art switch technologies to comecloser to this goal.

2

Roland Stele
GM and VP
Gate Driver ICs
Industrial Power Control

Contents
Infineon EiceDRIVER™ gate driver IC

4Automotive gate driver ICs

55

Overview

4

Automotive three-phase bridge driver IC

55

Infineon non-isolated (N-ISO) technology

6Gate driver IC chips for integrators

57

Infineon junction-isolation (JI) technology

7

Gate driver features and packages

58

Infineon silicon-on-insulator (SOI) technology

8Complementary: Opto-isolated solid state relays

60

Infineon galvanically isolated corelesstransformer (CT) technology

Complement.: Opto-isolated gate drivers/voltage source 61
10
New product highlights

Infineon power switch and iMOTION™ technologies

62

15

1EDC compact galvanic-isolated driver family with UL 62

MOSFETs

15

IGBTs (discrete and module)

18

1EDS-SRC reinforced-isolated driver familywith slew-rate control

63

SiC MOSFETs (discrete and module)

22

2ED2304S06F 650 V half-bridge gate driver IC with BSD

64

GaN HEMTs

25

Solid state relays (SSR)26

6ED2230S12T 1200 V three-phase gate driver IC
with OCP & BSD

65

iMOTION™ (controller)

27

2ED2106/08/09/091S06F 650 V gate driver familywith BSD in DSO-8

66

2ED21064/084/094S06J 650 V gate driver familywith BSD in DSO-14

66

2ED218xS06F/ 2ED218x4S06J high-current
gate driver family with BSD

66

1ED44176N01F 25 V low-side gate driverwith OCP and enable

67

1EDN7550 and 1EDN8550 - 1-channel low-sidegate driver family with truly differential inputs (TDI)

68

1EDi single-channel isolated gate driver ICs
for high voltage GaN switches

69

2EDi Dual-channel functional andreinforced-isolated gate driver family

70

1EDI2004AS 1200 V automotive gate driver IC

71

AUIR2x14SS 1200 V Half-bridge automotive
gate driver IC

72

Typical gate-driver applications

28

Drives29

Electric vehicles and hybrid vehicles (EV, HEV)31

EV charging

33

Lighting

34

Light electric vehicles (LEV)

35

Major home appliance (MHA)

36

Renewable energy

38

Small home appliance & battery-powered applications

40

Switch mode power supply (SMPS)

42

Uninterruptible power supply (UPS)

44

Product portfolio overview

47

Three-phase gate driver ICs

48

Half-bridge gate driver ICs

49

Single high-side gate driver ICs

50

Dual high-side/half-bridge gate driver ICs

51

EiceDRIVER™ evaluation boards and reference design 74

Single low-side gate driver ICs

51

High-side and low-side gate driver ICs

52

Simulation model(SPICE model & online Infineon designer)

78

Full bridge gate driver ICs

53

Gate driver brochures

79

Dual low-side gate driver ICs

53

Gate driver online selection tools

80

Complementary: current sense ICs

54

Infineon gate driver naming convention

82

Complementary: high-voltage start-up IC

54

Driver boards

54

Gate driver IC support

74

3

Infineon gate driver IC
technologies

Infineon EiceDRIVER™ gate driver IC
Overview
Gate driver ICs serve as the interface between control signals (digital or analog controllers) and power switches(IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). The integrated gate-driver solutions reduce your design complexity,
development time, bill of materials (BOM), and board space while improving reliability over discretely-implemented
gate-drive solutions.
Every switch needs a driver, and every driver needs a switch. Infineon offers a comprehensive portfolio of driver ICs witha variety of configurations, voltage classes, isolation levels, protection features, and package options. These flexible gate
driver ICs are complementary to Infineon IGBT discretes and modules, silicon (CoolMOS™, OptiMOS™ and StrongIRFETTM)
and silicon carbide MOSFETs (CoolSiC™), gallium nitride HEMTs (CoolGaN™), or as part of integrated power modules(CIPOS™ IPM and iMOTION™ smart IPM).
Voltage class2
1700 V

EiceDRIVER™
+ boosteror
Driver boards
1200 V

Coreless transformer (CT)Galvanically Isolation-Functional
UL 1577 VISO = 2500 V(rms)for 1 min1
600 V

Coreless transformer (CT)Galvanically Isolation – Reinforced/BasicUL 1577 VISO = 5000 V(rms) for 1 min
VDE 0884-10 VIORM = 1420 V, VIOTM = 8000 V
VDE 0884-11 (pending)

Level-Shift
Silicon On Insulator (SOI)
Junction Isolation (JI)
Voffset = 100 V, 200 V, 500 V,
600 V, 650 V, 700 V, 1200 V

200 V
25 V

Low side (N-ISO)2 VCC = 5, 20, 25, 80 V
2.5 kW

5 kW

7.5 kW

30 kW

75 kW

Note 1: 1EDC Compact only
Note 2: Voltage class is defined based on different driver configurations.
1. For single high-side, high- and low-side, half bridge and three phase gate drivers,
voltage class is defined as switch break down voltage in applications.

Gate driver configuration

5V

1-Channel

Power
level

200 kW

2. For low side drivers, voltage class is defined as maximum operating range
supply voltage.
3. F or special cases as 1EDNx550 (1EDN-TDI), common mode rejection (CMR) voltage
range up to 80 V.

25 V

100 V

200 V

500 V

600 V

High-side
Low-sideHigh-side

Gate drivers

2-Channel

Low-sideHigh- and low-side
Half-bridge

System building blocks

4-Channel

Full-bridge

6-Channel

Three-phase
Current senseStart-up

Non-isolated (N-ISO)

4

Junction isolation (JI)

Silicon on insulator (SOI)

Coreless transformer (CT)650 V

1200 VInfineon gate driver IC
technologies

Infineon gate driver IC applications
Leveraging the application expertise and advanced
technologies of Infineon and International rectifier,our gate driver ICs are well-suited for many applications such as industrial motor drives, major home
appliances, solar inverters, automotive applications,
EV charging, UPS, switch-mode power supplies(SMPS), high-voltage lighting, battery-powered
applications, and small home appliances.

Level-shifting technology(SOI&JI)

Coreless transformer(CT) technology
Industrial
robotics

Non-Isolated(N-ISO) technology

Infineon gate driver IC technologies
Low-side only
Non-isolated››Comprehensive familiesof single- and dual-low-side
drivers with flexible output
current, logic configurations,and UVLOs››Rugged technology of thehigh-voltage gate drivers, and thestate-of-the-art 130-nm process

Level-shift
Junction isolation››20 years proven technology››Largest portfolio of 200 V, 600 V,
700 V and 1200 V industry standard gate drivers using rugged
proprietary HVIC process

Galvanic isolation
Silicon on insulator››Infineon SOI technology

for high-voltage applications
with inherent integrated
bootstrap diode capability
and lower level-shift losses››Industry best-in-classrobustness against negativetransient voltage spikes on VS pin

Coreless transformer››Magnetically-coupled isolation
technology provides galvanic
isolation (functional, basic andreinforced)››Strongest gate-drive output

currents (up to 10 A) reducing
need for external booster circuits

5

Infineon gate driver IC
technologies

Infineon non-isolated (N-ISO) technology
Non-isolated (N-ISO) technology refers to gate driver ICs utilizing low-voltage circuitry with therobust technology of high-voltage gate drivers, and the state-of-the-art 0.13-µm process. Infineon’s
world-class fabrication techniques enable high-current gate drivers for high-power-density applications in industry-standard DSO-8 and small form-factor SOT23 and WSON packages. Infineon offers
comprehensive families of single-low-side and dual-low-side gate driver ICs with flexible options for
output current, logic configurations, packages, and protection features such as under-voltage lockout(UVLO), integrated overcurrent protection (OCP), and truly differential inputs (TDI).

Truly differential inputs (TDI)››The input signal levels of conventional low-side gate driver ICs are referenced to the ground

potential of the gate driver IC. If in the application the ground potential of the gate driver IC
shifts excessively, false triggering of the gate driver IC can occur.
››The 1EDN7550/1EDN8550 gate driver ICs have truly differential inputs. Their control signal
inputs are largely independent from the ground potential. Only the voltage difference between
its input contacts is relevant.
››This prevents false triggering of power MOSFETs.

6

Infineon gate driver IC
technologies

Infineon junction-isolation (JI) technology
Infineon p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS
fabrication technique. Infineon’s proprietary HVIC and latch-immune CMOS technologies enable rugged
monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry
construction with the best price per performance for specific motor-control and switch-mode power
applications.
Main benefits of Infineon JI technology:

E
n
n

B C
p

››High current capability (4 A)››Precision analog circuitry (tight timing/propagation delay)››Most comprehensive portfolio with industry-standard gate driver ICs››Voltage classes: 1200 V, 600 V, 500 V, 200 V, and 100 V››Configurations: three phase, half bridge, single channel, and more››Driver ICs tailored towards the best price-performance ratio

Pioneered by International Rectifier (IR) since 1989 with the introduction of the first monolithic
product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages
above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V.
Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage
analog and digital circuits can be implemented. With the ability to place high-voltage circuitry (ina ‘well’ formed by polysilicon rings) , that can ‘float’ 600 V or 1200 V, on the same silicon away fromthe rest of the low-voltage circuitry, high-side power MOSFETs or IGBTs exist in many popular off-line circuit topologies
such as buck, synchronous boost, half-bridge, full-bridge and three-phase.
These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge, and threephase configurations.

HVIC

LDMOS LEVEL SHIFT
HV
n+
P++

High-sidecircuitry
p-

HV
n+

n+

p-

p-

p+

p+

n+

n+

HV
n+

p-well

n-epi

n+
P++

pP++

p-sub

Polysilicon
rings

GROUNDED CMOS

LVn+Figure 1: Top down view of JI gate driver ICp-

HV-FLOATING CMOSP++

Low-sidecircuitry

p-

n-epi
p-sub

P++

p+

p+

n+

n-epi

p-well

LV
n+

n+
P++

p-sub

Figure 2: Device cross section of the high-voltage integrated circuit

7

Infineon gate driver IC
technologies

Infineon silicon-on-insulator (SOI) technology
Infineon silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique,measurable and best-in-class advantages, including integrated bootstrap-diode (BSD) and industrybest-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated
by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This
technology can also lower the level-shift power losses to minimize device-switching power dissipation.
The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

SiO2

Main benefits of Infineon SOI technology:››Best-in-class immunity to negative transient voltage prevents erratic
operation and latch-up while improving reliability››Low ohmic integrated bootstrap diodes (BSD) have the lowest reverse
recovery and forward losses resulting in increased efficiency, fasterswitching, lower temperature, and increased reliability

Active area
Substrate››Minimum level-shift losses improve driver efficiency and allow
flexible housing designs››Integrated input filters enhance noise immunity››200 V, 600 V, 650 V and 1200 V withstand voltages for eachvoltage design class providing operating margin

Operation robustness of negative transient voltage at the VS pin (-VS)
Today’s high-power switching inverters and drives carry a large load current. The voltage swing on VS
pin does not stop at the level of the negative DC bus. It swings below the level of the negative DC bus
due to the parasitic inductances in the power circuit and from the die bonding to the PCB tracks. This
undershoot voltage is called “negative transient voltage”.
EiceDRIVER™ high-voltage level-shift gate driver IC products using Infineon SOI technology havethe best-in-the-industry operational robustness. In Figure 4, the safe operating line of 6ED2230S12T is shown at VBS = 15 V
for pulse widths up to 1000 ns. In the green area, the products do not show unwanted functional anomalies or permanent
damage to the IC.
PW (ns)DC+ BUS

VBUS

LC1
D1

Q1

VS-COM

Typ. IC-failure
mechanisms:- HO flip- Latch up/Iqcc shift

LC2

-VS

D2

LE2
DC- BUS

Figure 3:
Parasitic elements of a half-bridge configuration

8t

Vs (V)

VS1

200

400

600

800

1000

-20
-40

LE1

Q2

0

VS UNDERSHOOT

0-60

Safe operating area (SOA)

-80
-100
-120

Figure 4:
Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T

Infineon gate driver IC
technologies

Infineon silicon-on-insulator (SOI) technology
Integrated bootstrap diode (BSD)
The bootstrap power supply is one of the most common
techniques for suppling power to the high-side driver circuitry due to its simplicity and low cost. As shown in
Figure 5, the bootstrap power supply consists of a bootstrap
diode and capacitor. The floating channel of level-shift gate
drivers is typically designed for bootstrap operation. Infineon SOI drivers feature excellent integrated ultra-fast bootstrap diodes. The low diode resistance of RBS ≤ 40 Ω enables
a wide operating range.

Integrated
bootstrap diode

VCC

DC+

VB

VBS

Bootstrap
capacitor

VGE
ILOAD

VCC

VS
VCEon
VFP
VSS

The Infineon SOI drivers with this feature can drive larger
IGBTs without the risk of self-heating, minimize BOM count,and reduce system cost.

DC-

Figure 5:
Typical connection diagram with integrated bootstrap diode (BSD)

Low level-shift losses
Level-shift losses cannot be ignored easily when the operating frequency increases. A level-shift circuit is used totransmit the switching information from the low-side to thehigh-side. The necessary charge of the transmission determines the level-shift losses.
EiceDRIVER™ high-voltage level-shift gate driver IC products
using the Infineon SOI technology require a very low charge
to transmit the information. Minimizing level-shifting power
consumption allows the design flexibility of higher frequency operations, as well as longer lifetime, improved systemefficiency and application reliability.
In Figure 6, the thermal diagrams on the same PCB board
show a temperature difference of 55.6°C lower in the
power dissipation of the Infineon SOI-based products(2ED2106S06F).

120.3°Infineon SOI HS+LS driverMax. temperature 66.6°

Standard HS+LS driverMax. temperature 122.2°

20.4°

Figure 6:
DC Bus voltage = 300 V; With CoolMOS™ P7 in D-Pak; 300 kHz switchingfrequency

9Infineon gate driver IC
technologies

Infineon galvanically isolated corelesstransformer (CT) technology
Infineon coreless transformer (CT) technology is a magnetically coupled, galvanically isolated technology
which uses semiconductor manufacturing processes to integrate an on-chip transformer consisting of
metal spirals and silicon oxide insulation. The on-chip coreless transformers are used for transmitting
switching information between the input chip and output chip(s) and other signals. The technology
provides short propagation delays, excellent delay matching, and strong robustness for driving
SiC MOSFETs and state-of-the-art IGBTs.
Main benefits of Infineon CT technology:››Galvanic isolation(functional, basic, reinforced)››Allows very large voltage swingsof ±1200 V or larger››Immunity against negative andpositive transients››Increases reliability of the end product››Low power losses for switching frequencies
into MHz range››Flexible configurations and options such as- Output current (up to 10 A)- DESAT protection- Active Miller clamp- Short-circuit clamp- Isolation rating and certification- 150 mil and 300 mil packages

Robustness››Extremely robust signal transfer independent of common mode noise››Common mode transit immunity (CMTI) up to 100 V/ns››Tight propagation-delay matching: tolerance improves application robustness without variations
due to aging, current, and temperature

Design flexibility››Wide range of gate voltages up to 40 V, including negative gate voltage››CT technology is ready for use with silicon carbide (SiC) MOSFETs››Closed-loop gate current control option
Precise timing control

Integrated ramp-based filter››Precise, integrated filters reduce propagation-delay

variation over a wide range of operating conditions››Integrated filters reduce the need of external filters››Tight propagation delay allows minimum deadtime
improving system efficiency and decreasing
harmonic distortion

Input padstructure
IN

GND

10

Infineon gate driver IC
technologies

Protection››Reliable short-circuit detection via accurate desaturation(DESAT) detection circuits (current source and comparator) protects the power switches from damage during
short-circuit condition››Two-level turn-off (TLTO) for short-circuit current protection to lower collector-emitter voltage overshoot››Active Miller clamping option protects against parasitic
turn-on due to high dV/dt››Built in short-circuit clamping limits the gate voltage
during short circuit

DESAT protection
VCC2
ID
DESAT

VD

+15 V
RDESAT

DDESAT

9V
Logic

OUT

CDESAT

VCE

GND2

Safety certification››Safety certification available for VDE 0884 and UL 1577
For SiC MOSFET switching››Ideal for ultra-fast switching 1200 V and 650 V siliconcarbide power transistors such as CoolSiC™ MOSFETs››The drivers incorporate most important key features andparameters for SiC driving:––DESAT for short circuit protection––Active Miller clamp––Tight propagation delay matching––Precise input filters––Wide output side supply range––Negative gate voltage capability––Extended common mode transient
immunity (CMTI) capability

Definitions of the various isolation types

Supplementary isolation
Basic isolation

Certified isolation
applied to live parts toprovide basic protection
against electric shock

Functional isolation
Isolation between
conductive parts only forthe purpose of correctequipment operation

Additional isolation to basic
isolation as a fallback solution
in case basic isolation fails

Galvanic
isolation
Sources: IEC60747-5-5,
VDE 0884-5/-10, UL 1577

Double galvanic isolation
Certified isolation consistingof both basic isolationand supplementary isolation

Reinforced isolation
Single certified isolation applied
to live parts to protect againstelectric shock11

Infineon gate driver IC
technologies

Galvanically isolated gate driver ICs
Galvanically isolated gate driver ICs
Typical connection

Separate sink/source outputs
+5 V
100n
SGND

VCC1
GND1

IN

VCC2
OUT+

IN+

OUT-

IN-

GND2

+15 V
1µ
10R
3R3

Active Miller clamp

Configuration

Voltageclass+5[V]V

Isolation type

Single high-side

1200

100n
Functional
isolation

OUT
V = ± 1200 V

Single high-side

1200SGND

Functional isolation

VISO = ± 1200 V
CLAMP

Single high-side

GND1

Isolation rating

Single high-side

1200

IN+
Functional isolation

VISO = ± 1200 V
VCC2Single high-side

1200

VISO = ± 1200 V

Single high-side

1200

Functional isolation
IN-

Single high-side

1200

Single high-side

GND2

IO+/IOtyp. [mA]
1300/900
2200/2300

VISO = ± 1200 V

Functional isolation

IN

10R

ISO

1200

1µ

+15 V

4000/3500
4000/3500
4000/3500

VISO = ± 1200 V

4400/4100

Functional isolation

VISO = ± 1200 V

5900/6200

1200

Functional isolation

VISO = ± 1200 V

7500/6800

Single high-side

1200

Functional isolation

VISO = ± 1200 V

10000/9400

Single high-side

1200

Functional isolation

VISO = ± 1200 V

10000/9400

Single high-side

1200

Functional isolation

VISO = ± 1200 V

10000/9400

Single high-side

1200

Functional isolation

VISO = ± 1200 V

2000/2000

Single high-side

1200

Functional isolation

VISO = ± 1200 V

2000/2000

Single high-side

1200

Functional isolation

VISO = ± 1200 V

SRC/2000Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

1300/900

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

2200/2300

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

4000/3500

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

4000/3500

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

4400/4100

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

5900/6200

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

7500/6800

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

10000/9400

Single high-side

1200

Functional isolation

VISO = 2500 V(rms) for 1 min

10000/9400

Single high-side

1200

Functional isolation

VISO = 5000 V(rms) for 1 min

SRC/2000Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2100/2100

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Single high-side

1200

Reinforced isolation

VIORM = 1420 V; VIOTM = 8000 V; VISO = 5000 V(rms) for 1 min

SRC/2000Single high-side

650

Reinforced isolation

VIORM = 1000 V(rms); VIOTM = 8000 V; VISO = 5700 V(rms) for 1 min

4000/8000

Single high-side

650

Functional isolation

VIORM = 510 V(rms); VISO = 1500 V(rms) for 10 ms

4000/8000

Single high-side

250

Functional isolation

VIORM = 460 V(rms); VISO = 1500 V(rms) for 10 ms

4000/8000

Half-bridge

1200

Functional isolation on high-side

VISO = ± 1200 V

1500/2500

Half-bridge

650

Functional isolation on high-side

VISO = ± 650 V

1500/2500

Dual high-side/half-bridge

1200

Functional isolation

VISO = ± 1200 V

2000/2000

Dual high-side/half-bridge

1200

Basic isolation

VIORM = 1420 V; VIOTM = 6000 V; VISO = 3750 V(rms) for 1 min

2000/2000

Dual high-side/half-bridge

650

Reinforced isolation

VIOWM = 1000 V(rms); VIOTM = 8000 V; VISO = 5700 V(rms) for 1 min

4000/8000

Dual high-side/half-bridge

650

Reinforced isolation

VIOWM = 1000 V(rms); VIOTM = 8000 V; VISO = 5700 V(rms) for 1 min

1000/2000

Dual high-side/half-bridge

650

Functional isolation

VIOWM = 510 V(rms); VISO = 1500 V(rms) for 10 ms

4000/8000

Dual high-side/half-bridge

650

Functional isolation

VIOWM = 510 V(rms); VISO = 1500 V(rms) for 10 ms

1000/2000

Dual high-side/half-bridge

250

Functional isolation

VIOWM = 460 V(rms); VISO = 1500 V(rms) for 10 ms

4000/8000

Dual high-side/half-bridge

250

Functional isolation

VIOWM = 460 V(rms); VISO = 1500 V(rms) for 10 ms

4000/8000

SRC=Turn on slew rate control

12

VCC1

Functional isolation

CT

9.1/8.5

120/115

1EDI20N12A

CT

✓

✓

12/11.1

125/120

1EDI20H12A

CT

✓

✓

12/11.1

300/300

1EDI20I12A

CT

✓

✓

12/11.1

300/300

1EDI20I12M

CT✓

12/11.1

300/300

1EDI30I12M

CT✓

12/11.1

300/300

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1EDI60N12A

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1ED020I12-F2

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1EDU20I12SV NEW CT

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CT

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CT

1EDI10I12M

DSO-36

1EDI05I12A

300/300

DSO-20300/300

12/11.1

DSO-18

12/11.1

Features (see page 58)

DSO-16 WB

Base PN

DSO-16

Prop delay
off/on typ. [ns]DSO-8 300mil

DSO-8

VDE 0884-10

UL 1577

Two-level turn-off

Soft over-current shutdown

Shutdown

Shoot-through protection

Separate sink/source outputs

Separate pin for logic groundOver-current protection

Operational amplifier

Fault reset

Fault reporting

EnableDesaturation protection

Comparator

Automotive qualified

UVLO
on/off typ. [V]Technology

Active Miller clamp

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1ED020I12FA2

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1900/1750

1ED020I12FTA

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1ED020I12-BT

CT

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1EDS20I12SV NEW CT

5.8/5.2

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1EDS5663H

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2EDS8265H

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2EDS8165H

NEW CT✓✓✓

4.2/3.9

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2EDF7275F

NEW CT✓✓

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2EDF7175F

NEW CT✓✓

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2EDF7275K

NEW CT✓✓

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14

Infineon power switch
technologies

Infineon power switch and iMOTION™
technologies
OptiMOS™ and StrongIRFET™ power MOSFET
Highest quality and performance
Infineon’s semiconductors are designed to bring more efficiency, power density and cost effectiveness. The full range of
OptiMOS™ and StrongIRFET™ power MOSFETs enables innovation and performance in applications such as switch mode
power supplies (SMPS), motor control and drives, inverters and computing.
Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and performance
demands in key specifications for power system design such as on-state resistance and figure-of-merit characteristics.
OptiMOS™ power MOSFETs provide excellent best-in-class performance. Features include ultra-low RDS(on), as well as
low charge for high switching-frequency applications. StrongIRFET™ power MOSFETs are designed for rugged applications,and are ideal for designs with a low switching frequency as well as those that require a high current-carrying capability.

OptiMOS™

StrongIRFET™

Best-in-class technology

Robust and excellent price/performance ratio

Designed for high performance applications

Product validation according to JEDEC standard

Optimized for high switching frequency

Optimized for low switching frequency

Industry’s best figure-of-merit

High current carrying capability

High efficiency and power density

Rugged siliconwww.infineon.com/powermosfet-20V-300V
15

Infineon power switch
technologies

CoolMOS™ SJ MOSFETs
Trusted leader in high voltage MOSFETs
The revolutionary CoolMOSTM power MOSFET family sets new standards in the field of energy efficiency. Our CoolMOSTM
products offer a significant reduction of conduction, switching and driving losses, and enable high power density andefficiency for superior power conversion systems.
High voltage superjunction MOSFETs address consumer applications, such as smartphone/tablet chargers, notebook
adapters, LED lighting, PC Power, as well as audio and TV power supplies. Increasingly, customers replace standard
MOSFETs by superjunction MOSFETs to benefit from higher efficiency and less power consumption for the end users.
CoolMOSTM P7 sets a new benchmark by offering high performance and competitive price all at once.
Also for industrial applications such as server, telecom, PC power, solar, UPS, EV-charging and others, Infineon’s latest
CoolMOSTM 7 superjunction MOSFETs with C7, G7, CFD7 and P7 product families offer what you need - from highest
efficiency to best price performance. Infineon meanwhile has also complemented the portfolio with first CoolGaNTM
e-mode HEMTs products to further optimize efficiency and system cost.
Infineon’s CoolMOSTM superjunction MOSFET offering is complemented by the automotive qualified series 600 V CPA,
650 V CFDA and 800 V C3A. Gain your momentum in the rapidly growing on-board charger and DC-DC converter markets
with our excellent performing automotive series with proven outstanding quality standards that go well beyond AEC Q101.
CoolMOS™ superjunction MOSFET
for consumer applications (<400 W)

CoolMOS™ superjunction MOSFET
for industrial applications (>250 W), and automotive
600/650 V G7

950 V P71)
900 V C3800 V CE

600/650 V C7
800 V P7 1)

500/600 V CP

800 V C3700 V P7 1)
600/650 V C6/E6

650/700 V CE
600 V CE

500/600/650 V C3600 V P7600 V P6

500 V CE

ActiveActive and preferred

Not for new design

600/650 V C6/E6
500/600/650 V C3Highest performancewww.infineon.com/coolmos
16

600 V CFD7
650 V CFDA

600 V CFD

600 V CPA

800 V C3A

Not for new design

ActiveActive and preferredTime

Optimized for flyback topologies
Price-performance

600 V P6

650 V CFD2

Time
1)

600 V P7

Fast recovery diode

Automotive

Infineon power switch
technologies

The following Infineon gate driver ICs are recommended as most suitable for Infineon MOSFETs
Application

Power switch
familyPFC

CoolMOS™ C7/P7

Battery powered application –inverter
Major home appliance – inverter
Major home appliance – SMPS

1ED44176N01F NEW, 1EDN8550B NEW, IRS44273L, 1EDN8511B

Dual low-side

IRS4427S, 2EDN8524F

Half-bridge

2EDF7175F NEW, 2EDF7275F NEW, 2EDL23N06PJ

High and low-side

IRS2005S/M, IRS2011S, IRS2301S, IRS21867S

Half-bridge

IRS2008S/M NEW, IRS2007S/M NEW, 2EDL05N06PF, IRS2302S, 2EDL8xxx*

Three-phase

6EDL04N02PR, 6ED003L02-F2, 6ED003L06-F2, 6EDL04N06PT

CoolMOS™ P7

Half-bridge

IRS2183S, 2EDL23N06PJ

CoolMOS™ CFD2/CE

Half-bridge

2ED2304S06F NEW, IRS2890DS

Dual low-side

2EDN8524F, IRS4427S

High and low-side

IRS2186(4)SHalf-bridge

IRS2153(1)DS

Single high-side

IRS10752L, IRS20752L, IRS2117S, IRS25752L

Half-bridge

2ED2304S06F NEW, 2EDL05N06PF, IRS2153(1)DS, 2ED2106S06F NEW

Single high-side

IRS2127S

Dual low-side

2EDN8524F

High and low-side

IRS2186(4)S, 2ED2106S06F NEW, 2ED2184S06F NEW

Single high-side

1EDI20I12AF, IR2214SS, 1EDI40I12AF, 1EDI60I12AF, 1EDS20I12SV NEWHigh and low-side

IRS2113S, IRS2186(4)S, 2ED2184S06F NEW, 2EDS8265H NEW, 2EDS8165H NEW

Single high-side

1EDI20N12AF, 1EDF5673F NEW

Dual high-side

2EDF7275F NEW

Single low-side

1ED44176N01F NEW, IRS44273L, 1EDN8511B, 1EDN8550B NEW

Dual low-side

IRS4427S, 2EDN8524F

Single low-side

1ED44176N01F NEW, IRS44273L

Dual low-side

IRS4427S, 2EDN8524F

Single high-side

1EDI20N12AF, 1EDI60I12AF

Single high-side

1EDI20N12AF

StrongIRFET™
OptiMOS™ 3/5

CoolMOS™ P7

CoolMOS™ P7

Drives – inverter <3.5 kW

StrongIRFET™
OptiMOS™ 3/5

Drives – SMPS

CoolMOS™ P7/C7

EV charging – DC-DC

CoolMOS™ CFD7
CoolMOS™ CSFD

Solar inverter – boost/SMPS

Solar – micro inverter

Solar – string/central inverter

Typically recommended gate driver part number

Single low-side

Lighting

EV-Charging – PFC

Gate driver configuration

CoolMOS™ P7/C7/
CFD2/CFD7

CoolMOS™ C7
OptiMOS™ 5
CoolMOS™ C7/CFD2

OptiMOS™ 5

Half-bridge

2ED2304S06F NEW, IR2114SS, 2EDL05N06PJ, 2EDF7175F NEW, 2EDF7275F NEW

Single high-side

1EDI60N12AF, 1ED020I12-F2

Dual high-side

2ED020I12-F2

High and low-side

IR2213S

Half-bridge

IR2214SS

Half-bridge

2EDL23N06PJ

High and low-side

IRS2186(4)S, 2ED2106S06F NEW, 2ED2184S06F NEW

UPS – main inverter

StrongIRFET™

UPS – active bridge rectifier

CoolMOS™ P7/C7Single high-side

1ED020I12-F2, 1ED020I12-FT

SMPS – Vienna rectifier

CoolMOS™ C7/P7

Dual high-side

2EDF7175F NEW, 2EDF7275F NEW

Single low-side

1ED44176N01F NEW, 1EDN7550B NEW

Dual low-side

IR11688S (synchronous rectification), 2EDN7524F

Dual high-side

2EDF7275K NEW

CoolGaN™

Single high-side

1EDF5673K NEW

CoolGaN™

Single high-side

1EDS5663H NEW

Dual high-side

2EDS8165H NEW, 2EDS8265H NEW

Dual low-side

2EDN7524F, 2EDN8524F

High and low-side

IRS2186(4)SHigh and low-side

AUIRS2113S, AUIRS2181/4S, AUIRS2191S

Single low-side

AUIRS1170S (synchronous rectification)

Dual low-side

AUIRB24427S

Half-bridge

AUIR2085S

Dual high-side

2ED020I12FA

High and low-side

AUIRS2301S

SMPS – Sync rectifier

SMPS – LLC/ZVS PSFBElectric and hybrid vehicle – onboard charger & DC-DC converter

Electric and hybrid vehicle –wireless in-cabin phone charging

OptiMOS™ 5

CoolMOS™ P7/CFD7

CoolMOS™ CFDA

OptiMOS™ 5* Coming soon

17Infineon power switch
technologies

Discrete IGBTs
Nomenclature: IGBT
IKpccNvvvdH3 – IGBT + diodeIGpccNvvvH3 – Single IGBTp = package
c = currentv = voltage
d = diode

IGBT
Soft

Diode commutation

Frequency range

8 kHz – 60 kHz

2 kHz – 40 kHz

RC series (monolithic)

RC-Drives (monolithic)

TRENCHSTOP™ /TRENCHSTOP™ Performance

TRENCHSTOP™ IGBT6600 V

600 V, 1200 V

650 V, 1200 V

IKpccN60R
IKpccN60RF

IKpccN60T
IKpccN60TP
IKpccN120T2
IKpccN120CT2

IKpccN120BH6
IKpccN120CS6
IKpccN65ET6

NEW!

Voltage range
600 V, 650 V, 1100 V, 1200 V,
1350 V, 1600 V
Part number
IHpccNvvvR5
IHpccNvvvR2
IHpccNvvvR3
IHpccN60R/RF
IHpccNvvvE1

IGpccN60T
IGpccN60dTP
IGpccT120
IGpccN120T2

Applications

Induction cooking
Microwave
Multifunction printers
Half-bridge resonant(Current resonance > 650 V)
Single switch(Voltage resonance > 650 V)

Conduction loss optimized
Solar inverter
Asymmetrical bridge
Symmetrical full-bridge
3-level type I or 3-level type II converter
Motor control
Three-phase inverter
Full-bridge inverter
Uninterruptable power supply
UPS bridge
3-level type II converter
Major and small home appliance
Symmetrical full-bridge

www.infineon.com/igbtdiscretes
18

Infineon power switch
technologies

Market leadership through groundbreaking innovation and application focus
From the low-power applications such as motor drives for fans to multi-megawatt applications of wind and traction,
Infineon provides a comprehensive IGBT family of 600 V, 650 V, and 1200 V technologies in multiple package choices. Our
new IGBT chip technologies, combined with innovative packaging, use trench structures and a field stop concept, and arepartially empowered by SiC freewheeling diodes. The technologies guarantee robust and reliable devices with maximum
power integration and minimum power losses.

Hard/no diode for IG** parts

10 kHz – 40 kHz
medium speed> 18 kHz – 60 kHz
high speed

10 kHz – 100 kHz
high speed> 18 kHz – 60 kHz
high speed

50 Hz – 20 kHz
low speed

Soft turn-off
TRENCHSTOP™ 5 (S5)HighSpeed 3(H3)

TRENCHSTOP™ 5
H5/F5

RC TRENCHSTOP™ 5(WR5)

Low VCE(sat)
TRENCHSTOP™ 5 (L5)650 V

600 V, 1200 V

650 V

650 V

650 V

IKpccN65dS5

IKpccN60H3
IKpccN120H3
IKpccN120CH3

IKpccN65H5
IKpccN65F5

IKpccN65WR5

IKpccN65dL5
IGpccN65L5

IGpccN65H5
IGpccN65F5

IGpccN60H3
IGpccN120H3

UPS

PFC

PFC

Energy storage

Battery charger

Battery charger

Welding

Welding

UPS

Welding inverter
Full-brigde
Half-bridge
Two transistor forward

Solar Inverter

Solar
Energy storage
SMPS

UPS
3-level NPC1 and
NPC2 topology,
inner switchesSolar
3-level NPC1 and
NPC2 topology,
inner switches
Welding
AC output(Al/Mag welding)

Air conditioning
HVDC (Telecom/data centers)

19

Infineon power switch
technologies

Low to medium power modules
The EasyPIM™/EasyPACK™ and the EconoPIM™/EconoPACK™ families
The EasyPIM™/EasyPACK™ as well as the EconoPIM™/EconoPACK™ families have been developed to provide a
cost-effective, compact design as well as simplified and reliable assembly. With these modules, we offer an optimized
product generation for low- and medium-power industrial drives.
The Easy family with its EasyPIM™, EasyPACK™ and EasyDUAL™ configurations covers the full power range from IC 6 A up to
200 A at 600 V, 650 V, and 1200 V. The modules are without base plates, and include the latest IGBT4 technology. The screw
clamp provides a new, fast and reliable, low-cost mounting concept.
This series has been extended to include the Easy1B and Easy2B sizes to offer more flexibility, with reduced height from
17 mm to 12 mm, and injected screw clamps for mounting.
The Econo family extends the power range from 15 A up to 300 A with nominal current at 600 V, 650 V, 1200 V and 1700 V.
The available configurations are the well-known EconoPIM™ and EconoPACK™ series. The Econo housing features a copper
Product Briefbase plate for optimized heat spread, and includes a thermistor (NTC). The Econo modules are available with solderable
pins or PressFIT pins, and an increasing number of Econo modules are available with pre-applied TIM.
Besides the standard planar IGBT chip technology for low switching losses, saturation voltage and high-switchingfrequency, the Econo family also includes the optimized IGBT4 in 650 V, 1200 V and 1700 V. For ease of design, IGBTs with 10µs short-circuit robustness are now available in 650 V, 1200 V and 1700 V in the same mechanical design. Selected Econo
modules feature integrated shunts for accurate and cost-efficient current sensing.

Product portfolio low and medium powe
EasyPACK/EasyPIM™, EconoPACK™/EconoPIM™

1700 V

Econo 6-packEconoPACK™

Econo 6-pack

1200 V
EconoPACK™
EasyPACK
EasyDUAL

Econo fourpack
Econo 12-packEasy 6-pack

EasyDUAL
Easy 3-level
Econo 6-pack

600 V /
650 V

Econo 4-packEconoPACK™
EasyPACK

Easy 6-packEasy 4-pack

EasyDUAL

Easy 3-level

10

20

50

75

1700 V

1200 V

175

200

Ic[A]

150

175

200

Ic[A]

EconoPIM™

EconoPIM™
EasyPIM™

20

150

EconoPIM™

EconoPIM™

www.infineon.com/Easy
www.infineon.com/Econo

100

EasyPIM™

600 V /
650 V

EconoPIM™

EconoPIM™
EasyPIM™

EasyPIM™

10

20

50

75

100

Available Module Configurations
Infineon shortcut

Description

CircuitInfineon shortcut

Description

CircuitInfineon power switch
technologies

The following Infineon gate driver ICs are recommended as most suitable for Infineon IGBT discretes and modules.
Application
PFC

Power switch family
TRENCHSTOP™ 5

Single low-side

1ED44176N01F NEW, IRS44273L, 1EDN8511B

Dual low-side

IRS4427S, 2EDN8524F

TRENCHSTOP™ IGBT6
TRENCHSTOP™ IGBT6; TRENCHSTOP™ 5
TRENCHSTOP™ Performance; RC Drives
TRENCHSTOP™
TRENCHSTOP™ 2

Drives – inverter

EasyPIM™ 1B/2B
EasyPACK™ 1B/2B
EconoPIM™ 2
EasyPIM™ 1B/2B; EasyPACK™ 1B
EconoPIM™ 2/3; EconoPACK™ 2/3/4
EconoDUAL™ 3; EconoPACK™+
34 / 62 mm module
CoolSiC™ SiC MOSFET module

Drives – SMPS
Drives – brake chopper

EV charging – DC-DC

Solar inverter – boost

Solar – string/central inverter/
Heat pump – inverter >2 kW

TRENCHSTOP™ 5
TRENCHSTOP™ 2
EasyPACK™ 1B/2B; EconoPIM™ 2
EconoPACK™ 2/3/4; EconoDUAL™ 3
EconoPACK™+ ; 34 / 62 mm module
CoolSiC™ SiC MOSFET module
HighSpeed 3; TRENCHSTOP™ IGBT6UPS

2ED2304S06F NEW, IRS2890DS
2EDL23I06PJ, 2EDL05I06PF, IRS2183S

High and low-side

IRS2113S

Three-phase

6EDL04I06PT, IRS2334S, 6ED003L06-F2

Half-bridge

2EDL23I06PJ

Three-phase

6EDL04I06PT

Single high-side

1EDC20I12AH NEW, 1EDC30I12MH NEW, 1EDI30I12MF

Half-bridge

2ED020I12-FI, IR2214SS

Three-phase

6ED2230S12T NEW

Single high-side

IRS2127S

Half-bridge

2EDL23I06PJ, IR2214SS

Three-phase

6ED2230S12T NEW, 6EDL04I06PT

Single high-side

1EDC20I12AH NEW, 1EDC30I12MH NEW, 1EDI30I12MF,
1ED020I12-BT, 1EDI60I12AF, 1EDS20I12SV NEW, 1ED020I12-B2

Dual high-side

2ED020I12-F2

Half-bridge

2ED020I12-FI, 2EDL23I06PJ, IR2214SS

Dual low-side

2EDN8524F

High and low-side

IRS2186(4)S, 2ED2106S06F NEW, 2ED2184S06F NEW

Single low-side

IRS44273L

Single high-side

1EDI05I12AF, 1EDI10I12MF

Single high-side

1EDI40I12AF, 1EDI20I12AF, 1EDS20I12SV NEW

Half-bridge

IR2214SS

High and low-side

IRS2113S, IRS2186(4)STRENCHSTOP™
EasyPACK™ 1B/2B
CoolSiC™ SiC MOSFET module

Single low-side

1ED44176N01F NEW, IRS44273L

Dual low-side

IRS4427S, 2EDN8524F

Single high-side

1EDI20N12AF, 1EDI60I12AF

Single high-side

1EDI60I12AF, 1ED020I12-F2, 1EDI20I12AF

Dual high-side

2ED020I12-F2

High and low-side

IR2213S

Half-bridge

IR2214SS

Three-phase

IR2235S

EasyPACK™ 1B/2B; EconoPACK™ 2/3
EconoDUAL™ 3; EconoPACK™+
34 / 62 mm module
CoolSiC™ SiC MOSFET module
HighSpeed 3; TRENCHSTOP™ IGBT6

Half-bridge

2ED2304S06F NEW, 2EDL05I06PF

Three-phase

6EDL04I06PT

TRENCHSTOP™ 5
TRENCHSTOP™

Half-bridge

2EDL05I06PJ, 2EDL23I06PJ, IR2114SS

HighSpeed 3
TRENCHSTOP™ IGBT6Single high-side

1EDI20I12AF, 1EDI60I12AF, 1EDS20I12SV NEW, 1ED020I12-FT

Single high-side

1EDI20I12MF, 1EDI60I12AF, 1ED020I12-F2, 1EDS20I12SV NEW,
1ED020I12-FT

Dual high-side

2ED020I12-F2

TRENCHSTOP™ 5
TRENCHSTOP™

EasyPACK™ 1B/2B
EconoPIM™ 2/3
EconoPACK™ 2/3/4
EconoDUAL™ 3
EconoPACK™+
34 / 62 mm module
CoolSiC™ SiC MOSFET module

Electric and hybrid vehicle –main inverter

IGBT3 / TRENCHSTOP™
Trench Gen 6.2
HybridPACK™ Family

Electric and hybrid vehicle –on-board charger & DC-DC
converter

TRENCHSTOP™ 5 AUTO
Planar Gen 5
CooliR Gen 1
EasyPACK™ 1B/2B

Electric and hybrid vehicle –auxiliaries

Half-bridge
Half-bridge

TRENCHSTOP™ 5

EasyPACK™ 1B/2B
TRENCHSTOP™ IGBT6; HighSpeed 3
Heat pump – inverter <2 kW

Typically recommended gate driver part number

HighSpeed 3
RC drives fastHome appliance – inverter/
compressor/drive

Gate driver configuration

IGBT3 / TRENCHSTOP™
Trench Gen6.2
CooliR Gen 2
EasyPACK™ 1B/2B

High and low-side

IRS2186(4)S, 2ED2106S06F NEW, 2ED2184S06F NEW

Half-bridge

2EDL05I06PJ, 2EDL23I06PJ, IR2114SS

Single high-side

1EBN1001AE, 1EDI2001AS, 1EDI2002AS, 1EDI2004AS,
1EDI2010AS

High and low-side

AUIRS2113S, AUIRS2181/4S, AUIRS2191S

Single low-side

AUIRS1170S synchronous rectification

Dual low-side

AUIRB24427S

Half-bridge

AUIR2085S

Dual high-side

2ED020I12FA

High and low-side

AUIRS2113S, AUIRS2181/4S

Single high-side

AUIRS2123, AUIRS2127S

Three-phase

AUIRS2336S

21

Infineon power switch
technologies

CoolSiC™ Silicon Carbide MOSFET
A revolution to rely on
Infineon’s CoolSiC™ technology enables radical new product designs
Infineon’s CoolSiC™ silicon carbide (SiC) MOSFETs open up new degrees of freedom for designers to improve efficiency andsystem flexibility.
The CoolSiC™ MOSFET offers advantages of the low gate charge and device capacitance levels in 1200 V switches,
negligible reverse-recovery losses of the internal body diode, temperature-independent low switching losses. Infineon’s
unique 1200 V SiC MOSFET adds additional advantages of superior gate-oxide reliability enabled by state-of-the-art trench
design, best-in-class switching and conduction losses, highest transconductance (gain), and short-circuit robustness atgate voltage at 15 V.
The result is a robust SiC MOSFET which is ideal for hard and resonant-switching topologies. It can be driven like an IGBT
using standard drivers delivering the highest level efficiency at switching frequencies unreachable by Si-based switches,
which allows for system size reduction, higher power density and improved lifetime.
CoolSiC™ MOSFET features››Revolutionary semiconductormaterial - Silicon Carbide››Very low switching losses››Threshold-free on state characteristic››Wide gate-source voltage range››Benchmark gate threshold voltage, VGS(th) = 4.5 V››Fully controllable dV/dt››Commutation robust body diode, ready forsynchronous rectification››Temperature independent turn-off switchinglossesBenefits››Best-in-class system performance››Efficiency improvement and reduced cooling effort››Significant reduction in junction temperature for longer
lifetime and higher reliability››Enables higher frequency operation for reduction insystem costs››Allows for increase in power density››2-level can replace 3-level topologies with the same
efficiency at lower complexity and cost››Excellent for hard-switching and resonant-switching
topologies like LLC and ZVS

Sales product

RDS(on)VDS

Package

IMW120R045M1*

45 mΩ

1200 V

TO-247 3pin

IMZ120R045M1*

45 mΩ

1200 V

TO-247 4pin

* Coming soon

The TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference
potential for the gate-driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result iseven lower switching losses than for the TO-247 3-pin version, especially at higher currents and higher switching frequencies.

www.infineon.com/SiC
22

Infineon power switch
technologies

CoolSiC™ Silicon Carbide MOSFET Modules
Based on our experience and expertise in the area ofcompatibility, Infineon has introduced the revolutionary
CoolSiC™ MOSFET technology, which enables radically new
product designs. Easy1B modules, for example, offer a very
good thermal interface, a low stray inductance and robust
design as well as PressFIT connections.

Easy 1B(Sixpack, booster, Half-bridge)

Easy 2B(Half-bridge)

62 mm(Half-bridge)

FF11MR12W1M1_B11
DF11MR12W1M1_B11
FF23MR12W1M1_B11
DF23MR12W1M1_B11
FS45MR12W1M1_B11

FF8MR12W2M1_B11

FF6MR12KM1

62mm
Easy 2B
Easy 1B
6 mΩ

Discrete &Easy 1B
8 mΩ≥ 11 mΩSixpack≥ 45 mΩ2 kWcomingsoon

comingsoon

NEWcomingsoon

Inverter power

200 kW

23

Infineon power switch
technologies

Silicon carbide MOSFET gate driver ICs

Ultra-fast switching 1200 V power transistors such as CoolSiC™ MOSFETs can be more easily handled by means of isolated
gate output sections. Therefore, the following EiceDRIVER™ galvanically isolated gate-driver ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
For a larger selection of isolated gate drivers, refer to the page 14 of this selection guide. These drivers incorporate mostimportant key features and parameters for SiC MOSFET driving such as tight propagation delay matching, precise input
filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, and
DESAT short circuit protection.

Product

Part number

Typ. peak
VCC2drive
VEE2
current

Typ. UVLO
thresholds

Typ. prop. delay

ActiveMillerclamp

Other key features

Package

DSO-8

1ED Compact
Isolated high-side Driver
Family1EDI20I12MF

3.5 A

20 V

11.9 V / 11 V

≤ 300 ns

Yes

1EDC20H12AH NEW

3.5 A

35 V

12 V / 11.1 V≤ 125 nsNo

1EDC60H12AH NEW

9.4 A

35 V

12 V / 11.1 V≤ 125 nsNo

1EDC20I12MH NEW

3.5 A

20 V

11.9 V / 11 V

≤ 300 ns

Yes

Functional isolation

DSO-8
8 mm creepage clearance;
UL 1577-certified with
VISO = 2500 V(rms) for 1 min

DSO-16
1ED-F2 Isolated high-side
Driver with Integrated
Protection

1ED020I12-F2

2.0 A

28 V

12 V / 11 V

≤ 170 ns

Yes

Short circuit clamping;
DESAT protection;
Active shutdown
2ED-F2 Isolated
Dual high-side driver with
Integrated Protection

1EDU Slew rate control(SRC) isolated
High-side driver

2ED020I12-F2

1EDU20I12SV

www.infineon.com/gd-SiC
24

2.0 A

NEW

2.0 A

28 V

28 V

12 V / 11 V

11.9 V / 11 V

≤ 170 ns

≤ 485 ns

DSO-36

Yes

Yes

Real-time adjustable gate
current control;Over-current protection;
Soft turn-off shut down;
Two-level turn-off;
UL 1577-certified with
VISO = 5000 V(rms) for 1 min

DSO-36

Infineon power switch
technologies

CoolGaN™ e-mode HEMTs
Tailor-made for the highest efficiency and power density in switch mode
power supplies

Infineon’s CoolGaN™ is the one of most reliable and globally qualified GaN solutions in the market. During the quality
management process not only the device is tested, butalso its behavior in the application. The performance of
CoolGaN™ goes beyond other GaN products in the market.
It offers a predicted lifetime of more than 15 years, with afailure rate less than 1 FIT.
Application

Power switch
familyGate driverconfiguration

SMPS PFC
Vienna rectifier
Multi-level switches

Degradation
modelsRel. investigation at
development phase

Qualification plan

Releasedproduct

Efficiency versus load (fsw = 65 kHz)*
100
99.18

99.33 99.33 99.31 99.25

99.17

99

99.07 99.00

98.90

98.75
98

IGO60R070D1
MEASURED VALUES
All available boards within +/- 0.1%

97

FLAT EFFICIENCY> 99 % over wide load range
96
250

500

750

1000 1250

1500 1750 2000

2250 2500

Output power [W]* No external power supplies – everything included.
Vin = 230 VAC, Vout = 390 VDC, tambient = 25 °C

Typically recommended
Benefits
gate driver part number

1EDF5673K
1EDF5673F

NEW
NEWPower: source: 0.85 Ω, sink: 0.35 Ω
Pace: 18 ns minimum output pulse-width
Precision: 13 ns propagation delay window
Protection: Functional isolation and Reinforced isolation,
VIOTM = 8 kVpk, VDE 0884-10, CMTI > 200 V/ns

High-voltage
CoolGaN™
IGO60R070D1 NEW
SingleIGOT60R070D1 NEW
high-side
IGT60R070D1 NEW
IGT60R190D1S NEW
IGLD60R070D1 NEW
SMPS LLC/ZVS PSFBQRP – quality
requirement profile

Application
profileEfficiency [%]CoolGaN™– in comparison to the next best silicon alternative –enables higher power density through the ability toswitch at high frequencies and highest efficiency, especiallyin the partial load range, through novel topologies such as
the CCM totem pole PFC stage. GaN enhancement mode(e-mode) HEMT performance features low reverse recovery charge and excellent dynamic performance in reverse
conduction compared to silicon FET solutions. This enables
more efficient operation at existing frequencies, and muchhigher frequency operation which can improve power density by shrinking the size of passive components in powerelectronics. CoolGaN™ enables doubled output power in agiven energy storage slot size, freeing up space and realizing higher efficiency at the same time.

Two-level negative gate-drive voltage, even for 1st pulse

1EDS5663H›› Less spurious GaN HEMT turn-on›› Robust SMPS operation
NEW ›› Up to 50% lower dead-time losses
GaN turn-on transient independent of duty cycle or switching speed›› Constant GaN HEMT switching slew rates›› Great operational robustness›› Least R&D effort›› Integrated galvanic isolation›› Strong CMTI›› Robust for hard switching Half-bridges

www.infineon.com/GaN
25

Infineon power switch
technologies

Infineon solid-state relays (SSR) technologies
Using Infineon power-switch technologies, Infineon solid-state relays (SSRs) are remotely controlled switches (on/off)with complete galvanic isolation from input to output. No power supply is needed on the output.
Two main sub-groups:››Photovoltaic isolators (PVI)––Isolated, low-power DC voltage sources capable of driving MOSFET or IGBT gates directly››Photovoltaic relays (PVR)––PVI plus internal power MOSFET

Main benefits of Infineon SSR technology:››Optically isolated technology provides galvanic isolation for safety applications››Wide range of applications from industrial automation to test equipment››Established and reliable products with over 20 years of history
Infineon SSRs can be used in a wide range of applications:››Electro-mechanical relay (EMR) replacement››Battery management systems››UPS››Automatic test equipment››Instrumentation systems››Industrial automation››Thermostats››Programmable logic controllers

Key advantages over electromechanical relays:››Silent operation››No contact bounce››Compact solution››Fast response time››High input sensitivity››High reliability with long operational life››Insensitivity to stray EMF, shock and vibration››Stable contact resistance over life

700 V
600 V

Load voltage [V](DC or AC peak)

500 V
400 V
300 V
200 V

PVI + external switch

PVR(includeinternal
switch)

100 V
0V

0A

1A

2A

3A

4A

Load current [A]PVI: Photovoltaic isolators

www.infineon.com/SSR
26

PVR: Photovoltaic relays

5A

6A

7A

Infineon iMOTION™
technologies

Infineon iMOTION™ technologies
Flexible and scalable platform for motor control solutions
iMOTION™ products are highly integrated devices used to control variable speed drives. By integrating both the required
hardware and algorithms to perform control of Permanent Magnet Synchronous Motors (PMSM), they provide the shortest
time-to-market and highest efficiency for inverterized motor systems at the lowest system and development cost.

iMOTION™ product offering
iMOTION™ controller

iMOTION™ Smart IPM
iMOTION™

iMOTION™

Gate driver

ARM®
Cortex®-M0(optional)

Motion Control
Engine(MCE)› MCE supervision› Sensors› Safety functions› Communication› Motor control› PFC control› Protection

Gate driver

3-phase inverterM3-phase inverter

Motion Control
Engine(MCE)

Motion control engine (MCE)
built-in sinusoidal FOC algorithm allows
smooth operation at wide speed ranges

MCE + additional MCU
customer specific application code
can be added

Full inverter system
in one small package, e.g. up to 60 W
in PQFN 12 x 12 mm2

IRMCK099/IMC100T

IRMCF100/IMC300A

IRDM983/IMM001T/IMM100

Market requirements››Energy-efficiency regulations drive inverterization rate››Shorter design cycles are driven by reduced productlife cycles››Focus on key differentiators drives trend to outsourcing››Increased price pressure requires system cost reduction

Application

Power controller family

Battery powered applications –motor inverter/BLDC <2 kW

iMOTION™ (IMC101T, IMC301A*)

Home appliance – PFC
Home appliance –inverter/compressor/drive

M› Motor control› PFC control› Protection› CommunicationiMOTION™ (IMC102T, IMC302A*)

iMOTION™ (IMC101T, IMC301A*)

Key benefits››Easy to use – no special motor control
know-how required››High performance and energy-optimized solution››Simplify the system solution by eliminating theHall sensor for control››Fastest time-to-market

Gate driverconfiguration

Typically recommended gate driver part number

High and low-side

IRS2005S/M, IRS2011S

Half-bridge

IRS2008S/M NEW, IRS2007S/M NEW

Three-phase

6EDL04N02PR, 6ED003L02-F2

Single low-side

1ED44176N01F NEW, IRS44273L, 1EDN8511B

Dual low-side

IRS4427S, 2EDN8524F

High and low-side

IRS2113S

Half-bridge

2ED2304S06F NEW, IRS2890DS, 2EDL23I06PJ, 2EDL05(I,N)06PF, IRS2183S

Three-phase

6EDL04(I,N)06xT, IRS2334S, 6ED003L06-F2* Coming soon

www.infineon.com/iMOTION
27

Typical gate-driverapplications

Typical gate-driver applications
A system is a set of interacting or independent components forming an integrated whole.
From product thinking to system understanding, Infineon enables total solutions which make generation, transmission
and conversion of electrical energy more efficient and reliable.
The following pages describe typical applications using Infineon gate drivers, power switches and modules.

Level-shifting technology(SOI&JI)

Coreless transformer(CT) technology
Industrial
robotics

Non-Isolated(N-ISO) technology

28

Typical gate-driverapplications

DrivesElectronic speed-control systems for energy and performance gains
Infineon’s gate driver ICs are the expert’s choice. With the breadth and depth of the portfolio, customers canquickly design and build efficient and robust systems for motor drive application.
RectifierDrive applications
Commercial
sewingmachines››››Elevators/escalators››Fans and pumps (PFC, inverter)››General purpose drives››Heavy duty drives (<200 kW)››Servo and stepper motors››Automatic gate and door opening system (inverter <1 kW)››Commercial, construction & agricultural vehicles (CAV, i.e. E-Bus)››Forklift trucks (hydraulic pump inverter, motor inverter)››Commercial air-conditioner (CAC compressor, fan <17 kW)››Robotics

Brake chopper

InverterCurrent
sensing

M
Position
sensing
Hall & GMR
sensors

Driverstage
Microcontroller

Auxiliary power supplies
Drivers& voltage regulators

DC-DC

Recommended gate drivers (Drives)
DriverDriver
Application voltage
Part number
configuration
class [V]200

600
Inverter(<3.5 kW)

Source/sink current Packages Description
typ. [A]DSO-8,
200 V half-bridge
NEW 0.29/0.6
VQFN-14 with VCC & VBS UVLO

Half-bridge

IRS2007S/M

Singlehigh-side

IRS2127S

0.29/0.6

DSO-8

Half-bridge

2EDL23I06PJ

2.3/2.8

DSO-14High andlow-side

IRS2186(4)S

4/4

DSO-14,DSO-8

6EDL04I06PT

0.165/0.375

DSO-28300 mil

IR2136S/J

0.2/0.23

DSO-28300 mil,
LCC-32Three-phaseHalf-bridge

IR2214SS

2/3

SSOP-24

Three-phase

6ED2230S12T NEW 0.35/0.65

DSO-24

1EDC20I12AH NEW

4/3.5

DSO-8
300 mil

1EDC30I12MH NEW

5.9/6.2

DSO-8
300 mil

1EDI30I12MF

5.9/6.2

DSO-8

1200

Singlehigh-side

Inverter(<7.5 kW)

1200
Three-phase

6ED2230S12T NEW 0.35/0.65

DSO-24Half-bridge

2ED020I12-FI

DSO-181.5/2.5

Suitable power switches
and modules
StrongIRFET™ (IRF135B203, IRF135SA204)
OptiMOSTM 3 (IPB072N15N3, IPB042N10N3 G, IPB107N20N3)600 V single high-side driverwith FAULT-RPT, OCPInfineon SOI technology with
TRENCHSTOP™ IGBT+Diodeintegrated bootstrap diode,(IKD10N60RF, IKA15N65ET6, IKW30N60DTP, IKB40N65ES5)
OCP, EN, FAULT-RPT
EasyPIM™ 1B/2B module
600 V high and low-side driver(FP10R06W1E3_B11,FP15R06W1E3_B11, FB20R06W1E3,
with high current
FP20R06W1E3_B11, FB30R06W1E3)
Infineon SOI technology with EasyPACK™ 1B module
integrated bootstrap diode,(FS20R06W1E3_B11)
OCP, EN, FAULT-RPT
OCP, EN, FAULT-RPT
TRENCHSTOP™ IGBT+Diode(IKW25N120T2, IKW40N120T2, IKQ75N120CT2)
1200 V half-bridge driver with
EasyPIM™ 1B/2B module (FP15R12W1T4_B11, FP15R12W2T4)
DESAT, Synchronization,
EasyPACK™ 1B/2B module (FS25R12W1T4_B11)
soft shutdown, FAULT-RPT
Easy 1B/2B 3-Level module (F3L15R12W2H3_B27)
EconoPIM™ 2 module (FP25R12KT4_B15)
Infineon SOI technology with TRENCHSTOP™ IGBT+Diode (IKW08T120, IKW15N120T2)
integrated bootstrap diode,
EasyPIM™ 1B/2B module (FP15R12W1T4, FP15R12W1T4_B11,
OCP, EN, FAULT-RPT
FP15R12W2T4)
Functional isolation, ≥ 100
kV/µs CMTI, short circuit
clamping, VISO = 2500 V(rms)for 1 min (1EDC only), active
Miller clamp (MH/MF only),
separate sink/source output(AH only)

CoolSiC™ SiC MOSFET (IMZ120R045M1 - 4-pin)
TRENCHSTOP™ IGBT+Diode (IKW40N120T2, IKQ50N120CT2,
IKQ75N120CT2)
EasyPIM™ 1B/2B module (FP25R12W2T4_B11,
FP35R12W2T4_B11)
EasyPACK™ 1B module (FS25R12W1T4_B11,
FS50R12W2T4_B11)
Easy 1B/2B 3-level (F3L15R12W2H3_B27)
EconoPIM™ 2 module (FP25R12KT4_B15, FP50R12KT4G)
EconoPACK™ 2/3 module (FS50R12KT4_B15)

Infineon SOI technology with TRENCHSTOP™ IGBT+Diode ( IKW40N120T2)
integrated bootstrap diode,
EasyPIM™ 1B/2B module (FP15R12W1T4, FP15R12W1T4_B11,
OCP, EN, FAULT-RPT
FP15R12W2T4)
TRENCHSTOP™ IGBT+Diode (IKW40N120T2, IKQ50N120CT2,
IKQ75N120CT2)
Functional isolation on
EasyPIM™ 1B/2B module (FP15R12W1T4_B11, FP15R12W2T4,
high-side, comparator,
FP25R12W2T4_B11)
OPAMP, SD
EasyPACK™ 1B module (FS25R12W1T4_B11)
Easy 1B/2B 3-level (F3L15R12W2H3_B27)

29

Typical gate-driverapplications

DrivesElectronic speed-control systems for energy and performance gains

Recommended gate drivers(Drives) continued
Application

Inverter(<30 kW)

Drivervoltageclass [V]

Driverconfiguration

Part number

Source/Sink current Packages
typ. [A]Singlehigh-side

1ED020I12-F2

2/2

DSO-16300milDual
high-side

2ED020I12-F2

2/2

DSO-361200
Singlehigh-side

1ED020I12-BT

DSO-36

Reinforced isolation, VDE 0884-10,
VIORM = 1420 V, VIOTM = 8000 V;
UL 1577; VISO = 5000 V(rms);
soft shutdown, DESAT, FAULT-RPT,
OCP, slew rate control, TLTO

DSO-16300milBasic isolation, VDE 0884-10
certified, VIORM = 1420 V,
VIOTM = 6000 V; UL 1577 certified,
VISO = 3750 V(rms) for 1 min,≥ 100 kV/µs CMTI, active Miller
clamp, DESAT, short circuit
clamping, FAULT-RST, TLTO

1ED44176N01F NEW 0.8/1.75

DSO-8

Low-side gate driver withintegrated overcurrent protection(±5%), fault reporting, and enable
functionality

IRS44273L

1.5/1.5

SOT23-5

Low-side gate driver in small,easy-to-use package

Singlelow-side

1EDN8511B

4/8

SOT23-6Dual
low-side

2EDN8524F

5/5

DSO-8

25

Dual
low-side

IRS4427S

2.3/3.3

DSO-8

Industry provendual-low-side gate driver

20

Dual
low-side

2EDN8524F

5/5

DSO-8

20 V non-inverting dual-low-side
driver with CMOS inputs

600

High andlow-side

IRS2186(4)S

4/4

DSO-14,
DSO-8

600 V high and low-side driverwith high current

25

Singlelow-side

IRS44273L

1.5/1.5

SOT23-5

non-inverting low-side driver withCMOS inputs in small 5 pin SOT-23
package

1EDI05I12AF

1.3/0.9

DSO-8

1EDI10I12MF

2.2/2.3

DSO-8

1200

Singlehigh-side

1ED020I12-B2

25

PFC
20

SMPS
(<3 kW)30

Basic isolation, VDE 0884-10
certified, VIORM = 1420 V,
VIOTM = 6000 V; UL 1577 certified, VISO
= 3750 V(rms) for 1 min, ≥ 100 kV/µs CMTI, active Miller clamp, DESAT,
short circuit clamping, two level
turn off, FAULT-RST

Functional isolation, ≥ 100 kV/µs
CMTI, Separate sink/source output,
short circuit clamping, 125-ns propagation delay

10/9.4

1EDS20I12SV NEW SRC/2

Brake
chopper(<3.5 kW)DSO-16300milFunctional isolation, ≥ 100 kV/µs
CMTI, active Miller clamp, DESAT,
short circuit clamping, FAULT-RST

DSO-8
300mil

1EDI60H12AH

Inverter(<200 kW)

2/2

Description

1200

Singlelow-side

Singlehigh-side

2/2

Low-side gate driver with fast
propagation delay and high drive
current

Functional isolation, ≥ 100 kV/µs
CMTI, short circuit clamping, separate sink/source output (AF only),
active Miller clamp (MF only)

Suitable power switches
and modules
CoolSiC™ SiC MOSFET(IMZ120R045M1 – 4-pin)
EasyPIM™ 1B/2B module(FP15R12W1T4_B11, FP25R12W2T4_B11)
EasyPACK™ 1B module(FS25R12W1T4_B11, FS50R12W2T4_B11)
EconoPIM™ 2 module (FP25R12KT4_B15,
FP50R12KT4G)
EconoPACKTM 2/3 module(FS50R12KT4_B15)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11)
EconoPIM™ 2/3 module(FP150R12KT4(P)_B11)
EconoPACK™ 2/3/4 module(FS150R12KT4(P)_B11)
EconoDUAL™ 3 module (FF300R12ME4_B11)
EconoPack™+ module(FS300R12OE4, FS450R12OE4)
34 mm module (FF150R12RT4)
62 mm module (FF300R12KE4)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11)
EasyPACK™ 1B module(FS50R12W2T4_B11, FS75R12W2T4_B11)
Easy 1B/2B 3-level (FS3L50R07W2H3F_B11,
F3L75R12W1H3_B11, F3L100R12W2H3_B11)
EconoPIM™ 2/3 module (FP75R12KT4_B15,
FP100R12KT4(P)_B11)
EconoPACK™ 2/3/4 module(FS75R12KT4_B15, FS100R12KT4G(P)_B11)
34 mm module (FF50R12RT4, FF100R12RT4)
TRENCHSTOP™ IGBT+Diode(IKW30N65H5, IKW40N65WR5,
IKFW40N60DH3E, IKFW50N60DH3E)
Rapid Diode(IDW30E65D1, IDW60C65D1)
CoolMOS™ MOSFET(IPP60R060P7, IPP60R080P7,
IPP60R099P7, IPP60R120P7, IPP60R180P7,
IPP60R280P7, IPP60R360P7)CIPOS™ Mini
(IFCM15S60GD, IFCM15P60GD,
IFCM10P60GD, IFCM10S60GD)
TRENCHSTOP™ IGBT+Diode(IKP30N65F5, IKB40N65EF5)
CoolMOS™ MOSFET (IPP60R060P7,
IPP60R080P7, IPP60R099P7, IPP60R120P7,
IPP60R180P7, IPP60R280P7, IPP60R360P7,
IPW65R019C7, IPW65R045C7, IPW65R065C7,
IPW65R095C7, IPW65R125C7, IPW65R190C7)

TRENCHSTOP™ IGBT+Diode(IKW40N120T2, IKQ50N120CT2,
IKQ75N120CT2)

Typical gate-driverapplications

Electric vehicles and hybrid vehicles
In (hybrid) electric vehicles, efficiency is a key success factor for extending the range of the vehicle,
which also applies to auxiliary applications. Our automotive-qualified gate driver ICs help simplify
design, and optimize performance in all MOSFETs and IGBTs driving stages.

DC-DC
converter

32-bitMCU

Control + display

Battery
management(Hybrid) electric vehicles
applications››On-board charger››HV/LV DC-DC converter››Auxiliary loads››Wireless in-cabin phonecharging

I/V measurement

RFI
filterAC-DC(15 V)

Recommended gate drivers(Electric vehicles & hybrid vehicles)
Application

On-board
charger&DC-DC
converter

Drivervoltageclass [V]Part number

Source/Sink current
typ. [A]Packages

Description
Booster for automotive motor drives
above 10 kW, peak current up to ±15
A, support for active clamping withvery fast reaction time, active clamping disable, ASC input signals

Suitable power switches
and modules

20

Dual low-side

AUIRB24427S

6/6

DSO-8

100

Half bridge

AUIR2085S

1/1

DSO-8

200

Singlelow-side

AUIRS1170S

3/6

DSO-8

High andlow-side

AUIRS2113S

2.5/2.5

DSO-16

High andlow-side

AUIRS2191S

3.5/3.5

DSO-16

High andlow-side

AUIRS21814S

1.9/2.3

DSO-14Three-phase

AUIRS2336S

0.2/0.35

DSO-28700Singlehigh-side

AUIR2114SS*

3/3

SSOP-24

UVLO on both supply lines (withhysteresis), desaturation detection on AUIRG4PH50S
both sides, with internal biasing resis- AUIRGDC0250
tor, soft shutdown function and pin

600

High andlow-side

AUIRS2301S

0.2/0.35

DSO-8

IPG20N04S4L-11A
Tolerant to negative transient voltage,
IPZ40N04S5L-4R8
UVLO, matched propagation delay
IPZ40N04S5L-7R4

600

600
Auxiliarydrives (fans,pumps, HVAC,
heat pump,
PTC heater)

Wireless
in-cabinphonecharging

Driverconfiguration

AIGW40N65H5, AIGW40N65F5,
AIKW40N65DH5, AIKW40N65DF5,
AIGW50N65H5, AIGW50N65F5,
AIKW50N65DH5, AIKW50N65DF5,
Enable half-bridge
DC-bus converters for 48 V distributed AUIRGP35B60PD, AUIRGP35B60PD-E,
AUIRGP50B60PD1, AUIRGP65G40D0,
systems with reduced component
count and board space , programma- AUIRGF65G40D0, AUIRGP66524D0,
AUIRGF66524D0;
ble switching frequency < 500 kHz,
CoolMOS™ CPA
adjustable dead-time(IPB60R099CPA, IPP60R099CPA
Secondary side high speed synchroIPW60R045CPA, IPI60R099CPA)
nous rectification controller, ccm
CoolMOS™ CFDA
operation with SYNC function,(IPD65R420CFDA, IPB65R110CFDA,> 500 kHz, cycle by cycle MOT check
IPP65R110CFDA, IPW65R048CFDA)
Tolerant to negative transient voltage, EasyPACK™ 1B/2B
UVLO(FS75R07W2E3)
Tolerant to negative transient voltage,
UVLO, matched propagation delay
Tolerant to negative transient voltage, AUIRG4BC30U-S, AUIRG4PC40S-E
UVLO , matched propagation delay
AUIRGB4062D1, AUIRGSL4062D1
AUIRGS4062D1, AUIRGP4062D
AUIRGP4062D-E, AUIRGP4063D
AUIRGP4063D-E, AUIRGR4045D
Drives up to six IGBT/MOSFETAUIRGU4045D, AUIRGP4066D1
power devices, OCP,
AUIRGS30B60K, AUIRGSL30B60K
over-temperature shutdown input,
AIKB20N60CT, AIKP20N60CT
advanced input filter, integrated
AIKW20N60CT, AIKW30N60CT
dead-time protection,
AIKW50N60CT
shoot-through protection, UVLO
EasyPACK™ 1B/2B(FS75R07W2E3)*Coming soon

31

Typical gate-driverapplications

Electric vehicles and hybrid vehicles –main inverter
Typical application diagram - main inverter
Phase current/
voltagemeasurement
IGBT stage

HSM

32-bit MCU
Multicore/
Lockstep
AURIX™

Power
supplyDriver stage
2ED020I12FA
AUIRS2336S

Power
supplyDC-link capacitor

LV battery

HV battery
Case temperature
measurement
NTC measurement

In vehicles with an electric drive train, the inverter controls the electric motor, and is a key component in the car, as it determines driving behavior. Regardless of whether the motor is synchronous, asynchronous or brushless DC, the inverter iscontrolled by an integrated PCB, which should be designed to minimize switching losses and maximize thermal efficiency,
as the range of the vehicle is directly related to the efficiency of the main inverter. The Infineon EiceDRIVER™ gate driverfamily includes single and dual-channel automotive IGBT driver ICs that provide galvanic isolation and bidirectional signaltransmission. These products are ideal for the main inverter systems in automotive applications where efficiency, spacesavings and monitoring functions are priorities. Our automotive-qualified gate driver ICs help simplify design and optimize
performance in all MOSFETs and IGBTs driving stages.

Recommended gate drivers (Electricvehicles & hybrid vehicles - main inverter)
Application

Drivervoltageclass [V]

Driverconfiguration

400

Singlehigh-side

1EBN1001AE

Singlehigh-side
Singlehigh-side

Main inverter

Part number

Outputcurrent[A]

Packages

Description

15

DSO-14

IGBT / MOSFET gate driver booster for automotive
motor drives above 10 kW, peak current up to±15 A, support for active clamping with very fast
reaction time, active clamping disable, ASC Input
signals

1EDI2001AS2

DSO-36

1EDI2002AS2

DSO-361200
Singlehigh-side

32

1EDI2010AS2

DSO-36

On-chip galvanic insulation (up to 6 kV), support of
5 V logic levels, 16-bit standard SPI interface(up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals.
Power-on reset pin, debug mode, pulse suppressor,
TLTO
On-chip galvanic insulation (up to 6 kV), support of
5 V logic levels, 16-bit standard SPI interface (up to
2 MBaud) with daisy chain support, enable input
pin, pseudo-differential inputs for critical signals.
Power-on reset pin, debug mode, pulse suppressor,
TLTO, integrated ADC

Suitable power switches

IGBT3 / TRENCHSTOP™
(AIKW75N60CT,
AIKQ100N60CT,
AIKQ120N60CT,
AUIRGPS4070D0)
Trench Gen 6.2
HybridPACK™ Family(FS200R07A02E3_S6,
FS820R08A6P2B,
FS820R08A6P2LB,
FS400R07A1E3_S7,
FS200R07A1E3)

Typical gate-driverapplications

EV Charging

AC power in

As electro-mobility increasingly becomes part of our daily lives, there isa growing need for more efficient charging solutions. Today, a DC charger with 150 kW can supply an EV with a 200 km charge in around 15
minutes. As fast-charging and battery technologies continue to evolveand improve, experts anticipate that charging time will drop evenfurther. The unique expertise in e-mobility and power supplies makes
Infineon the natural partner for advancing DC electric vehicle charging
in terms of efficiency, performance, optimal cost and innovation.

AC-DC
including
PFC

DC-DC
stage

DC power
to batteries

Gate driver and galvanic isolation

Microcontroller
AURIX™ / XMC™

Internal power supply
Communication
to user

Communication
to car - end user
Human-machineinterface(HMI)

Authenticationandencryption

Recommended gate drivers (EV charging)
Application

DriverVoltageclass [V]600

Driverconfiguration

Part number

Source/Sink current Packages Description
typ. [A]IRS2113S/M

2.5/2.5

DSO-16300mil,VQFN-14600 V high and low-sidegate driver with SD

IRS2186(4)S

4/4

DSO-14,
DSO-8

600 V high and low-side driver withhigh current

DSO-8

Functional isolation,≥ 100 kV/µs CMTI, separate sink/
source output, short circuit
clamping

High andlow-sideDC-DC(<3 kW)
1200

DC-DC(<30 kW)

1200

650

Singlehigh-side

1.3/0.9

1EDC20H12AH NEW 4/3.5

DSO-8
300 mil

1EDI40I12AF

DSO-8

Singlehigh-side
7.5/6.8

Reinforced isolation, 150 kV/µs
CMTI, EN

DSO-8

Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output,
short circuit clamp, 125-ns propagation delay

1EDS20I12SV NEW SRC/2

DSO-36

Reinforced isolation, VDE 0884-10,
VIORM = 1420 V, VIOTM = 8000 V; UL
1577, VISO = 5000 V(rms);
slew rate control, soft shutdown,
DESAT, FAULT-RPT, OCP, TLTO

2EDF7275F

NEW 4/8

2EDF7175F

NEW 1/2

DSO-16150milDual-channel galvanically isolatedgate-driver ICs

DSO-8
300 mil

Functional isolation, ≥ 100 kV/µs
separate sink/source output, shortcircuit clamping

NEW 4/8

1EDC60H12AH NEW 10/9.4
1200Singlehigh-side

650

Dual
high-side

1200

Singlehigh-side

1EDI40I12AH

201

Singlelow-side

1EDN8550B NEW 4/8

SOT23-620

Singlelow-side

1EDN8511B

4/8

SOT23-625

Dual
low-side

IRS4427S

2.3/3.3

DSO-8

7.5/6.8

TRENCHSTOP™ IGBT+Diode(IKB40N65EH5, IKW75N65EH5, IKZ75N65EH5)CoolMOS™ MOSFET(IPP65R110CFD, IPP65R310CFD,
IPP65R420CFD, IPP65R660CFD,
IPW60R105CFD7, IPW60R145CFD7,
IPP60R170CFD7, IPP60R280CFD7)
TRENCHSTOP™ IGBT+Diode(IKW40N120H3)
CoolMOS™ MOSFET(IPP65R110CFD, IPP65R310CFD,
IPP65R420CFD, IPP65R660CFD,
IPW60R105CFD7, IPP60R170CFD7,
IPP60R280CFD7)

Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output, CoolSiC™ SiC MOSFET
short circuit clamping, 125-ns(IMW120R045M1 - 3-pin,
propagation delay
IMZ120R045M1 - 4-pin)
TRENCHSTOP™ IGBT+Diode
Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output, (IKQ50N120CH3, IKQ75N120CS6)
short circuit clamping

DSO-16300 mil

Dual high-side 2EDS8265H

DC-DC(<60 kW)PFC

1EDI05I12AF

Suitable power switches
and modules

CoolMOS™ MOSFET(IPW65R041CFD, IPW65R080CFD,
IPW60R018CFD7, IPW60R040CFD7,
IPW60R070CFD7, IPW60R090CFD7,
IPL60R060CFD7, IPW60R037CSFD)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11;
DF11MR12W1M1_B11; DF23MR12W1M1_B11)
EasyPack™ 1B/2B module(F4-3L50R07W2H3F_B11)
EconoPIM™ 2 module (FP50R07N2E4_B11)
EconoPACK™ 2/3/4 module(FS75R12KT4_B15, FS100R12KT4G(P)_B11,
FS200R12KT4R(P)_B11, FS225R12OE4)
EconoDUAL™ 3 module (FF225R12ME4_B11)
34mm module (FF50R12RT4, FF150R12RT4)62mm module (FF200R12KE4)

TRENCHSTOP™ 5 H5
(IKW50N65EH5, IKZ50N65EH5, IKW75N65EH5,IKZ75N65EH5)20 V non-inverting signal Low-side
driver with truly differential inputs, CoolMOS™ MOSFET
especially for kelvin source 4 pin(IPP60R060P7, IPP60R120P7, IPP60R180P7,
device in PFC boost
IPP60R360P7, IPW65R019C7,
20 V non-inverting single low-side
IPW65R065C7, IPW65R125C7,
driver with CMOS inputs in small
IPW65R190C7)
6-pin SOT-23 package
25 V non-inverting dual low-side
driver with CMOS inputs

Note 1: Common mode rejection (CMR) voltage range up to 80 V.

33

Typical gate-driverapplications

Lighting
Primary DSPLighting applications››Commercial lighting››Industrial lighting››Agricultural lighting

Secondary MCU

PFC

LLC
Sync. buck

AC
IN

EMC

DC
OUT

Recommended gate drivers (Lighting)
Application

Drige
voltageclass [V]Drive
configuration

Part number

Source/Sink current
typ. [A]Packages

Description

1ED44176N01F NEW 0.8/1.75

DSO-8

OCP (±5%), EN, FAULT-RPT,
programmable fault clear time

IRS44273L

SOT23-5

25 V non-inverting single low-side
driver with CMOS inputs in small 5
pin SOT-23 package

25
Single low-side
PFC

1.5/1.5

20

1EDN8511B

4/8

SOT23-6

20 V non-inverting single low-side
driver with CMOS inputs in small 6
pin SOT-23 package

25

IRS4427S

2.3/3.3

DSO-8

25 V non-inverting dual low-side
driver with CMOS inputs

20

2EDN8524F

5/5

DSO-8

20 V non-inverting dual low-side
driver with CMOS inputs

100

IRS10752L

0.16/0.24

SOT23-6

100 V single high-side driver insmall 6 pin SOT-23 package

200

IRS20752L

0.16/0.24

SOT23-6

200 V single high-side driver insmall 6 pin SOT-23 package

IRS2117S

0.29/0.6

DSO-8

600 V single high-side gate driver

IRS25752L

0.16/0.24

SOT23-6

600 V single high-side driver insmall 6 pin SOT-23 package

NEW 0.29/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diode0.29/0.6

DSO-8

600 V high-side and low-sidegate driver

Dual low-side

HS buck(<100 W)

Single high-side
600

650

2ED2106S06F
High and low-side

HB(LLC)(<200 W)

600

IRS2101S

650

2ED2304S06F

NEW 0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diodeIRS2153(1)DS

0.18/0.26

DSO-8

Self-oscillating, Integrated
bootstrap FET, SD and SD-PROG

Half-bridge
600
200

High and low-side

IR2010S

3/3

DSO-8

200 V high and low-side
driver with SD

600

Half-bridge

2EDL05N06PF

0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diodeSync buck

34

Suitable power switches

CoolMOS™ MOSFET(IPP60R060P7, IPP60R080P7,
IPP60R099P7, IPP60R120P7,
IPP60R180P7, IPP60R280P7,
IPP60R360P7)

CoolMOS™ MOSFET(IPP80R280P7, IPP80R360P7,
IPP80R450P7, IPP80R600P7,
IPP80R750P7, IPP80R900P7,
IPP80R1K2P7, IPP80R1K4P7,
IPD80R2K0P7, IPD80R2K4P7,
IPD80R3K3P7, IPD80R4K5P7)

CoolMOS™ MOSFET(IPP60R060P7, IPP60R080P7,
IPP60R099P7, IPP60R120P7,
IPP60R180P7, IPP60R280P7,
IPP60R360P7)

CoolMOS™ MOSFET(IPP80R280P7, IPP80R360P7,
IPP80R450P7, IPP80R600P7,
IPP80R750P7, IPP80R900P7,
IPP80R1K2P7, IPP80R1K4P7,
IPD80R2K0P7, IPD80R2K4P7,
IPD80R2K4P7, IPD80R4K5P7)

Typical gate-driverapplications

Light electric vehicles (LEV)
Battery
24 V/36 V/48 V/72 V

Charger
Batteryauthentication(origa)110 V/230 V
AC-DC

DC-DC

Light electric vehicles applications››E-bikes/E-scooters (<2 kW)››Low-speed electric vehicles (forklift, golfcart; <15 kW, <70 km/h)››Small electric vehicle (<30 kW, <200 km/h)

Gate driver

User interface
andcommunication

USB,
serialCOM

XMC
Microcontroller
1000/4000 series

Drivervoltageclass [V]

Driverconfiguration
High andlow-side

Motor inverter/
BLDC
200(<2 kW)

Part number

Source/Sink current
typ. [A]Packages

Description

IRS2005S/M

0.29/0.6

DSO-8,
VQFN-14200 V high and low-side driverwith VCC & VBS UVLO

IRS2011S

1/1

DSO-8

200 V, 1-A high and low-side
driver with VCC & VBS UVLO

IRS2008S/M

NEW 0.29/0.6

DSO-8,
VQFN-14200 V half-bridge with SD,
VCC & VBS UVLO

IRS2007S/M

NEW 0.29/0.6

DSO-8,
VQFN-14200 V half-bridge with
VCC & VBS UVLO

Half-bridge

6EDL04N02PR

0.165/0.375

TSSOP-28

Infineon SOI technology withintegrated bootstrap diode,
OCP, EN, FAULT-RPT

6ED003L02-F2

0.165/0.375

TSSOP-28

Infineon SOI technology with
OCP, EN, FAULT-RPT

DSO-16150 mil

Functional isolation, disable
600 V high and low-side gate
driver with low UVLO (6 V/5.5 V)

Three-phase

650

Dual high-side
High andlow-side

Motor inverter(<15 kW)600

2EDF7275F

NEW 4/8

2EDF7175F

NEW 1/2

IRS21867S

4/4

DSO-8

IRS2301S

0.2/0.35

DSO-8

2EDL05N06PF

0.36/0.7

DSO-8

IRS2302S

0.2/0.35

DSO-8

6ED003L06-F2

0.165/0.375

DSO-28300mil

6EDL04N06PT

0.165/0.375

DSO-28300milHalf-bridge

Three-phase

650

DSO-8

Infineon SOI technology withintegrated bootstrap diode2EDL23N06PJ

DSO-14

Infineon SOI technology withintegrated bootstrap diode,
OCP, EN, FAULT-RPT

Singlehigh-side

Motor inverter(<30 kW)

1EDI60(I,N)12AF

2.3/2.8

10/9.4DSO-8Functional isolation, ≥ 100 kV/µs CMTI, separate sink/source
output, short circuit clamping

DSO-24

Infineon 1200 V SOI
technology with integrated
bootstrap diode, OCP (±5%),
EN, FAULT-RPT

1200
6ED2230S12T NEW 0.35/0.65
Three-phase
IR2235S/J

0.25/0.5

DSO-28300mil,LCC-32

Position sensing

Suitable power switches
modules and controllers
LegendPower

SensorMicrocontroller

Peripherals

Block Diagram

Other Products

StrongIRFET™
(IRFB7530PBF,IRFS7530PBF, IRF100B201,
IRF100S201, IRF135B203, IRF135S203,
IRFB4115, IRFS4115)

OptiMOS™ 3/5(IPB017N06N3, IPT012N06N, IPB017N08N5,
IPB017N10N5, IPB042N10N3, IPB048N15N5,
IPB073N15N5, IPB107N20N3, IPT015N10N5,
IPT059N15N3)

TRENCHSTOP™ IGBT+Diode(IKD10N60RF, IKA15N65ET6, IKW30N60DTP,IKB40N65ES5, IKW50N60DTP, IKW75N60T)

600 V high and low-side gate
driver with low UVLO (4.1/3.8 V) StrongIRFET™
(IRFB7530PBF,IRFS7530PBF, IRF100B201,
Infineon SOI technology with
IRF100S201, IRF135B203, IRF135S203,
integrated bootstrap diodeIRFB4115, IRFS4115)
600 V half bridge gate driverwith SD & low UVLO (4.1/3.8 V) OptiMOS™ 3/5(IPB017N06N3, IPT012N06N, IPB017N08N5,
Infineon SOI technology with
IPB017N10N5, IPB042N10N3, IPB048N15N5,
OCP, EN, FAULT-RPT
IPB072N15N5, IPB107N20N3, IPT015N10N5,
Infineon SOI technology with
IPT059N15N3)
integrated bootstrap diode,
OCP, EN, FAULT-RPT

2ED2183S06F NEW 2.5/2.5
Half-bridge

600

Current sensing

Sense&
monitorRecommended gate drivers (Light electric vehicles)
ApplicationM

3-phaseinverter

CoolMOS™ MOSFET (IPP60R060P7,
IPP60R080P7, IPP60R099P7, IPP60R120P7,
IPP60R180P7, IPP60R280P7, IPP60R360P7)
EasyPIM™ 1B/2B module family(FP20R06W1E3_B11, FP50R06W2E3_B11)
EasyPACK™ 1B module family(FS30R06W1E3_B11, FS50R06W1E3_B11)
EasyPIM™ 1B/2B module family(FP25R12W2T4_B11)
EasyPACK™ 1B module family(FS35R12W1T4_B11, FS50R12W2T4_B11)
EconoPIM™ 2 module family(FP35R12KT4_B15, FP50R12KT4G)
EconoPACK™ 2/3 module family(FS50R12KT4_B15)

EasyPIM™ 1B/2B module family(FP15R12W1T4_B11, FP15R12W2T4)1200 V 3-phase driver with OCP,
SD, OPAMP, FAULT-RPT

35

Typical gate-driverapplications

Major home appliances (MHA)
Power management

Rectification

Major home applianceapplications››Refrigerators (compressors)››Air-conditioners (PFC,
compressors, fans, SMPS)››Washing machines (drummotors, drain pumps)››Dryers (drum drives,
compressors, fan drives)››Dish washers (drain pumps,
spray/main circulator pumps)

Plug

DC
supplyIGBT
Driver stage

Gate driver ICs

User interface&
communication

Central control
unit

AF discretesSense & monitor

M

MCU

Rotor position detection

Recommended gate drivers (Major home appliances)
Application

Drivervoltageclass [V]25

Driverconfiguration

Singlelow-side

20
PFC

25
20
600

Dual
low-sideHalf-bridge

650

Source/Sink current Packages Description
typ. [A]Part number

DSO-8

IRS44273L

1.5/1.5

SOT23-5

1EDN8511B

4/8

SOT23-6

IRS4427S

2.3/3.3

DSO-8

2EDN8524F

5/5

DSO-8

2EDL23(I,N)06PJ

2.3/2.8

DSO-14

Infineon SOI technology withintegrated bootstrap diode,
OCP, EN, FAULT-RPT

2ED2304S06F

NEW 0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diodeIRS2890DS

NEW 0.22/0.48

DSO-14Integrated bootstrap FET,
FAULT-RPT, OCP

Half-bridge

Inverter/compressor/
drive/fans

20
25
SMPS
(100 W)650

Dual
low-side

36

non-inverting dual low-side
driver with CMOS inputs

2EDL23(I,N)06PJ

2.3/2.8

DSO-14

2EDL05(I,N)06PF

0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diode

6EDL04(I,N)06xT

0.165/0.375

DSO-28300milInfineon SOI technology withintegrated bootstrap diode,
OCP, EN, FAULT-RPT

IRS2334S/M

0.2/0.35

DSO-20300mil,VQFN-28

600 V Three-phase gate
driver IC

6ED003L06-F2

0.165/0.375

DSO-28300milInfineon SOI technology with
OCP, EN, FAULT-RPT

2EDN8524F

5/5

DSO-8

IRS4427S

2.3/3.3

DSO-8

non-inverting dual low-side
driver with CMOS inputs

High andlow-side

2ED2106S06F

NEW 0.29/0.7

DSO-8

High andlow-side

IRS2186(4)S

4/4

DSO-14,
DSO-8

Half-bridge

IRS2153(1)DS

0.18/0.26

DSO-8

600

*Coming soon

non-inverting single low-side
driver with CMOS inputs insmall SOT-23 package

Infineon SOI technology withintegrated bootstrap diode,
OCP, EN, FAULT-RPT

600

Three-phase

OCP (±5%), EN,
FAULT-RPT, programmablefault clear time

1ED44176N01F NEW 0.8/1.75

Infineon SOI technology withintegrated bootstrap diode

Suitable power switches
IPMs and controllers
TRENCHSTOP™
(IKW30N65H5, IKW40N65WR5,
IKFW40N60DH3E, IKFW50N60DH3E)
Rapid diode(IDW30E65D1, IDW60C65D1, IDFW40E65D1E,
IDFW60C65D1)
CoolMOS™ MOSFET(IPP60R060P7, IPP60R099P7, IPP60R120P7,
IPP60R180P7, IPP60R280P7, IPP60R360P7)CIPOS™ Mini
(IFCM15S60GD, IFCM15P60GD,
IFCM10P60GD, IFCM10S60GD)
iMOTION™
(IMC102T, IMC302A*)

TRENCHSTOP™ IGBT+Diode(IKD03N60RF, IKD04N60RF, IKD06N60RF)
TRENCHSTOP™ IGBT6(IKA08N65ET6, IKA10N65ET6, IKA15N65ET6,
IKD06N65ET6*, IKD08N65ET6*)
CoolMOS™ MOSFET(IPD65R1K4CFD, IPD65R950CFD,
IPN60R1K0CE, IPN60R1K5CE, IPD60R1K5CE,
IPD60R1K0CE)
iMOTION™
(IMC101T, IMC301A*)

CoolMOS™ MOSFET(IPP60R060P7, IPP60R080P7, IPP60R099P7,600 V high and low-side driver IPP60R120P7, IPP60R180P7, IPP60R280P7,
with high current
IPP60R360P7)
Self-oscillating, Integrated
bootstrap FET, SD and
SD-PROG

37

Typical gate-driverapplications

Renewable energy
Renewable energy applications››Solar (string & central inverters)››Solar (micro inverters)››Heat pumps (pump inverters)
Photovoltaic
panelsAuxiliary power
supplyMPP tracker

DC-AC

DC-DC conversion

conversion

EiceDRIVER™

Sensing

Energy storage(optional)

EiceDRIVER™

...

Grid

Sensing...

EiceDRIVER™
...

Sensing

MCU with ARM® Cortex®-M4
MPPT
calculation

38

PWM
generation

ADC

Battery management

Typical gate-driverapplications

Recommended gate drivers (Renewable energy)
Application

Drivervoltageclass [V]25
20

Driverconfiguration
Singlelow-sideDual
low-side

Solar inverter
Boost/SMPS

Source/Sink current Packages Description
typ. [A]

1ED44176N01F NEW 0.8/1.75

DSO-8

IRS44273L

1.5/1.5

SOT23-5

IRS4427S

2.3/3.3

DSO-8

2EDN8524F

5/5

DSO-8

1EDI20N12AF
1200

Half-bridge

1EDC60H12AH NEW 10/9.4

DSO-8
300mil

2ED2304S06F

NEW 0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diodeIR2114SS

2/3

SSOP-24

DESAT, Synchronization, SD-SOFT,
FAULT-RPT

2EDL05N06PJ

0.36/0.7

DSO-14

Infineon SOI technology withintegrated bootstrap diodeDSO-16150 mil

Functional isolation

600

650

Dual high-side 2EDF7275F

1200

Singlehigh-side1200

NEW 4/8

1EDI20N12AF

4/3.5

DSO-8

1EDI60(I,N)12AF

10/9.4

DSO-8

1ED020I12-F2

2/2

DSO-16300milDual
high-side

2ED020I12-F2

2/2

DSO-36

High andlow-side

IR2213S

2/2.5

DSO-16300milHalf-bridge

IR2214SS

2/3

SSOP-24

Three-phase

650
Heat pumpinverter(<2 kW)

Heat pumpinverter(>2 kW)600

non-inverting low-side driver withCMOS inputs

DSO-8

Singlehigh-side

Solar string/
centralinverter
DC-AC(>200 W)

OCP (±5%), EN, FAULT-RPT,
programmable fault clear time

4/3.5

Singlehigh-side650

Solar micro
inverter
DC-AC(<200 W)

Part number

Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output,
short circuit clamping, 125-ns
propagation delay

2ED2304S06F

NEW 0.36/0.7

DSO-8

2EDL05I06PF

0.36/0.7

DSO-8

Three-phase

6EDL04I06xT

0.165/0.375

DSO-28300milInfineon SOI technology withintegrated bootstrap diode, OCP,
EN, FAULT-RPT

Singlehigh-side

1EDI20I12AF

4/3.5

DSO-8

Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output,
short circuit clamping

High andlow side

IR2213S

2/2.5

DSO-16300milHalf-bridge

IR2214SS

2/3

SSOP-24

6ED2230S12T

NEW 0.35/0.65

DSO-24

OptiMOS™ 5(BSC035N10NS5, BSC093N15NS5)
CoolMOS™ MOSFET (IPP65R110CFD,
IPP65R190CFD, IPP65R420CFD,
IPP65R660CFD, IPW65R019C7,
IPW65R065C7, IPW65R095C7,
IPW65R190C7)

TRENCHSTOP™ IGBT+Diode
Infineon 1200 V SOI technology with (IKW40N120H3, IKW40N120CS6,
integrated bootstrap diode, OCP
IKQ50N120CH3)(±5%), EN, FAULT-RPT
EasyPACK™ 1B/2B module(FS25R12W1T4_B11, FS50R12W2T4_B11)

DSO-24Three-phase

CoolSiC™ SiC MOSFET module(DF11MR12W1M1_B11,
DF23MR12W1M1_B11)
EasyPACK™ 1B/2B module family(DF100R07W1H5FP_B54,
DF160R12W2H3F_B11)
CoolMOS™ MOSFET(IPW65R019C7, IPW65R065C7,
IPW65R095C7, IPW65R190C7)

CoolSiC™ SiC MOSFET(IMW120R045M1 - 3-pin,
IMZ120R045M1 - 4-pin)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11;
DF11MR12W1M1_B11; DF23MR12W1M1_B11)
TRENCHSTOPTM IGBT+Diode
Functional isolation, ≥ 100 kV/µs(IKW40N120CS6, IK(Q/Y)75N120CS6,
CMTI, active Miller clamp, DESAT,IK(W/Z)75N65ES5, IK(W/Z)75N65EH5)short circuit clamping, FAULT-RST
EasyPACK™ 1B/2B module(F3L75R12W1H3_B11, F3L200R12W2H3_B11,
F4-3L50R07W2H3F_B11, F4-75R07W2H3_B51)
EconoPACK™ 2 module (F3L200R12N2H3)
1200 V high and low side gate driver EconoDUAL™ 3 modulewith SD and Separate power supply (FF225R12ME4_B11, FF300R12ME4_B11)
EconoPack™+ module(FS225R12OE4, FS300R12OE4)
34 mm module (FF50R12RT4,1200 V Half-bridge driver with
FF150R12RT4)
DESAT, Synchronization, SD-SOFT,
62 mm module (FF200R12KE4,
FAULT-RPT
FF300R12KE4)

NEW 0.35/0.65

1200

CoolMOS™ MOSFET(IPW65R019C7, IPW65R065C7,
IPW65R095C7, IPW65R190C7)

Functional isolation, ≥ 100 kV/µs
CMTI, separate sink/source output,
short circuit clamping, 120-ns
propagation delay

6ED2230S12T

Half-bridge

Suitable power switches

Infineon SOI technology withintegrated bootstrap diode

TRENCHSTOP™
(IKW30N65H5, IKW75N65ES5, IKFW75N60ET)
EasyPACK™ 1B/2B module(F3L225R07W2H3P_B63)

CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11, FF23MR12W1M1_B11)
TRENCHSTOP™ IGBT+diode(IKW40N120H3, IKQ50N120CH3,
IKQ75N120CS6)
1200 V high and low side gate driver EasyPACK™ 1B/2B modulewith SD and separate power supply (FS25R12W1T4_B11, FS50R12W2T4_B11,
F4-3L50R07W2H3F_B11, F4-75R06W1E3)
EconoPIM™ 2 module
1200 V Half-bridge driver with
(FP25R12KT4_B15, FP50R12KT4G)
DESAT, Synchronization, SD-SOFT,
EconoPACKTM 2/3 module (FS50R12KT4_B15)
FAULT-RPT
34 mm module (FF50R12RT4, FF150R12RT4)
Infineon 1200-V SOI technology
with integrated bootstrap diode,
OCP (±5%), EN, FAULT-RPT

TRENCHSTOP™ IGBT+diode(IKW40N120H3, IKW40N120CS6,
IKQ50N120CH3)
EasyPACK™ 1B/2B module(FS25R12W1T4_B11, FS50R12W2T4_B11)

39

Typical gate-driverapplications

Small home appliances andbattery-powered applications
Typical small home appliance application diagram

Rectification

Power management

Plug

DC
supplyIGBT
Driver stage

Gate driver ICs

User interface&
communication

Central control
unit

AF discretesSense & monitor

M

MCU

Rotor position detection

Small home appliance applications››Vacuum cleaner (SR motor, BLDC, PFC)››Hair dryers››Induction heating (half bridge-topology)››Microwave ovens››Fans (hood fans, ceiling fans, freezer fans)››Battery chargers (PFC)
Typical battery powered three-phase system: a one-stop-shop for battery powered drives
Power management
OptiMOS™
StrongIRFET™
HEXFET™
Linear voltage/DC-DC
switching regulators

Battery management
CoolMOS™
OPTIGA™

Gate driver ICs
EiceDRIVER™
200 V driver ICs

UserinterfaceUSB,
serial COM& ethernet

CAN transceiver

Statusindication
LED drivers ≤ 60 V

XMC™
Microcontroller&
digital controller&
iMOTION™
IRMCK099

Hall switches,
Linear Hall sensors,angle andcurrent sensors

Battery-powered applications››Drones / multicopters (<1 kW)››Lawn mower (<1 kW)››Cordless power tools (<1 kW)››Service robotics (<1 kW)››Cordless vacuum cleaners (<1 kW)››Toys (RC cars) (<1 kW)››Fast battery chargers
403-phaseinverter
OptiMOS™
StrongIRFET™
HEXFET™
IPM

Current sensing
Current sensing

Position sensingMTypical gate-driverapplications

Recommended gate drivers (Small home applicancesand battery-powered applications)Application

Drivervoltageclass [V]25

PFC

Driverconfiguration

Singlelow-side

20
25
20
201

Battery
poweredMotor
Inverter/BLDC 200(<1 kW)Dual
low-side
Singlelow-sideHigh andlow sideHalf-bridge

Source/Sink current
typ. [A]Part number

Packages

Description

1ED44176N01F NEW 0.8/1.75

DSO-8

OCP (±5%), EN, FAULT-RPT,
programmable fault clear time

IRS44273L

1.5/1.5

SOT23-5

1EDN8511B

4/8

SOT23-6

IRS4427S

2.3/3.3

DSO-8

2EDN8524F

5/5

DSO-8

1EDN7550B

NEW 4/8

SOT23-6

0.29/0.6

DSO-8,
VQFN-14

1/1

DSO-8

0.29/0.6

DSO-8,
VQFN-14

6EDL04N02PR

0.165/0.375

TSSOP-28

6ED003L02-F2

0.165/0.375

TSSOP-28

IRS2005S/M
IRS2011S
IRS2008S/M

NEW

IRS2007S/M

NEW

Three-phase

Inverter/
Compressor/
Drive
600

High andlow side

StrongIRFET™
(IRL40SC209, IRL40SC228,
200 V driver with VCC & VBS UVLO, IRL40T209)
OptiMOS™ 5
and shutdown (IRS2008 only)(BSC0925ND, BSZ0909ND,
IPT004N03L, IRL40T209,
BSC054N04NS)
iMOTION™
Infineon SOI technology withintegrated bootstrap diode (6EDL (IMC101T, IMC301A*)only), OCP, EN, FAULT-RPT

DSO-8

2ED2183S06F NEW 2.5/2.5

DSO-8

IRS2890DS

DSO-14Integrated bootstrap FET,
FAULT-RPT, OCP

NEW 0.22/0.48

Infineon SOI technology withintegrated bootstrap diode2EDL23I06PJ

2.3/2.8

DSO-14

Infineon SOI technology withintegrated bootstrap diode, OCP,
EN, FAULT-RPT

2EDL05(I,N)06PF

0.36/0.7

DSO-8

Infineon SOI technology withintegrated bootstrap diodeIRS2113S/M

2.5/2.5

DSO-16300mil,VQFN-14600-V High and low side gate
driver with SD

IRS2186(4)S

4/4

DSO-8
DSO-14600-V high and low side driverwith high current

6EDL04(I,N)06xT

0.165/0.375

DSO-28300 milInfineon SOI technology withintegrated bootstrap diode, OCP,
EN, FAULT-RPT

IRS2334S/M

0.2/0.35

DSO-20300 mil,
VQFN-28

600-V Three-phase gate driver IC

Three-phase

TRENCHSTOP™
(IKW30N65H5, IKW40N65WR5,
IKFW40N60DH3E, IKFW50N60DH3E)
Rapid Diode(IDW30E65D1, IDW60C65D1)
CoolMOS™ MOSFET(IPP60R060P7, IPP60R099P7,
IPP60R180P7, IPP60R360P7)
iMOTION™
(IMC102T, IMC302A*)

Single-channel gate driver IC
with truly differential inputs

2ED2304S06F NEW 0.36/0.7
650

Half-bridge

Non-inverting low-side driverwith CMOS inputs

Suitable power switches
and controllers

TRENCHSTOP™ IGBT+Diode(IKD03N60RF, IKD04N60RF,
IKD06N60RF)
TRENCHSTOP™ IGBT6(IKA08N65ET6, IKA10N65ET6,IKA15N65ET6)TRENCHSTOP™ RC-H5(IHW20N120R5, IHW40N120R5,IHW20N135R5, IHW40N135R5)iMOTION™
(IMC101T, IMC301A*)

Note 1: Common mode rejection (CMR) voltage range up to 80 V.
* Coming soon

41

Typical gate-driverapplications

Switch-mode power supply (SMPS)
Typical application diagram

42

Typical gate-driverapplications

Recommended gate drivers(Switch-mode power supply)
Application

Drivervoltageclass [V]

201

PFC

Driverconfiguration

Part number

Source/Sink current Packages Description
typ. [A]

SOT23-6

CoolMOS™ 7 series:
IPP60RyyyC7 → x: T = HSOF-8;
yyy: RDS(on) range (017 mW - 99 mW);
Non-inverting signal lowIPP65RyyyC7 → x: Z = TO-247-4pin;side driver with truly differ- yyy: RDS(on) range (019 mW - 95 mW);
ential inputs, especially for IPP60RyyyG7→ x: DD = DDPAK, T= HSOF-8;
kelvin source 4 pin device
yyy: RDS(on) range (028 mW - 190 mW);in PFC boost
IPP65RyyyG7→ x: T= HSOF-8;
yyy: RDS(on) range (033 mW - 195 mW);
IPP60RyyyP7→ x: Z = TO-247-4pin;yyy: RDS(on) range (037 mW - 180 mW);

1ED44176N01F NEW 0.8/1.75

DSO-8

OCP (±5%), EN,
FAULT-RPT, programmablefault clear time

1EDN8511B

4/8

SOT23-6

20 V non-inverting signal
low-side driver withCMOS inputs

Dual
low-side

2EDN8524F

5/5

DSO-8

20 V non-inverting
dual low-side driverwith CMOS inputs

Singlehigh-side

1EDF5673F

NEW 4/8

DSO-16150 mil

Functional isolationDual
high-side

2EDF7275F

NEW 4/8

DSO-16150 mil

Functional isolation

Half-bridge

2EDL23I06PJ

DSO-14

Infineon SOI technology
with integrated bootstrap
diode, OCP, EN, FAULT-RPT

Singlelow-side25

1EDN8550B

NEW 4/8

Singlelow-side20

650
Totem pole
PFC
600

Viennarectifier

650

Dual
high-side25

2.3/2.8

DSO-16150 mil

Functional isolation,
150 kV/µs CMTI, EN

1ED44176N01F NEW 0.8/1.75

DSO-8

OCP (±5%), EN, FAULT-RPT,
programmable fault clear
time

1EDN7550B

NEW 4/8

SOT23-6

Non-inverting low-side
driver with truly differential
inputs2EDN7523F

5/5

DSO-8

2EDF8275F

NEW 4/8

Singlelow-side201
20
Sync rectifier

25
200

250

650
LLC/ZVS PSFB
600

Suitable power switches

Dual
low-side

Non-inverting dual lowside driver with CMOS
inputsIRS4427S

2.3/3.3

DSO-8

Dual
low-side

IR11688S

1/4

DSO-8

Dual synchronous rectification control IC

Dualhigh-side

2EDF7275K

NEW 4/8

LGA-13Functional isolation, 150
kV/µs CMTI, Disable

Singlehigh-side

1EDF5673K

NEW 4/8

LGA-13Functional isolation
Reinforced isolation,
200 kV/µs CMTI, EN

Singlehigh-side

1EDS5663H

NEW 4/8

DSO-16300 milDualhigh-side

2EDS8265H

NEW 4/8

DSO-16300 milReinforced isolation,
150 kV/µs CMTI, EN

High andlow-side

IRS2186(4)S

4/4

DSO-14,
DSO-8

600-V high and low side
driver with high current

CoolMOS™ 7 series:
IPP60RyyyC7 → x: P = TO-220, W=TO-247,
T = HSOF-8; yyy: RDS(on) range (017 mW - 180 mW);
IPP65RyyyC7 → x: P = TO-220, W=TO-247;
yyy: RDS(on) range (019 mW - 225 mW);
IPP60RyyyG7→ x: DD = DDPAK, T= HSOF-8;
yyy: RDS(on) range (028 mW - 190 mW);
IPP65RyyyG7→ x: T= HSOF-8;
yyy: RDS(on) range (033 mW - 195 mW);
IPP60RyyyP7→ x: P = TO-220, W=TO-247;
yyy: RDS(on) range (037 mW - 380 mW);
IPP60RyyyCFD7→ x: P = TO-220, W=TO-247;
yyy: RDS(on) range (018 mW - 280 mW);
CoolGaN™ IGxx60RyyyD1 → Ron 70 mW and 190
mW; DSO-20-87, DSO-20-85, HDSOF-8-3 and DFN
8x8. (CCM)

IPP60RyyyCFD7→ x: P = TO-220, W=TO-247;
yyy: RDS(on) range (018 mW - 280 mW). (TCM)
IPP60RyyyG7/C7 → x: P = TO-220, W=TO-247,
T = HSOF-8; yyy: RDS(on) range (017 mW - 180 mW);
IPP65RyyyC7 → x: P = TO-220, W=TO-247;
yyy: RDS(on) range (019 mW - 225 mW)
IPP60RyyyP7→ x: P = TO-220, W=TO-247;
yyy: RDS(on) range (037 mW - 380 mW);

OptiMOS™ 5 (BSC035N10NS5)
OptiMOS™ 3 (BSC030N04NS)

CoolGaN™ → Ron 70 mW and 190 mW; DSO-20-87,
DSO-20-85, HDSOF-8-3 and DFN 8x8. (CCM)

IPP60RyyyCFD7→ x: P = TO-220, W=TO-247;
yyy: RDS(on) range (018 mW - 280 mW);

Note 1: Common mode rejection (CMR) voltage range up to 80 V.

43

Typical gate-driverapplications

Uninterruptible power supply (UPS)
Typical application diagram

Activefront endor
rectifier

Grid

Inverter

Load

Battery charger
Gate driver+
isolation

Auxiliary power
supply &voltageregulation

Gate driver+
isolation

Microcontroller

Communicationinterface

Recommended gate drivers(Uninterruptible power supply)
Application

Drivervoltageclass [V]600

Driverconfiguration

Packages

Description

Suitable power switches

2EDL05I06PJ

0.36/0.7

DSO-14

Infineon SOI
technology withintegrated bootstrap
diode

TRENCHSTOPTM and TRENCHSTOPTM 5(IK(W/Z)50N65EH5, IK(W/Z)50N65ES5, IKFW50N60ET)

DSO-14

Infineon SOI
technology withintegrated bootstrap
diode, OCP, EN, FAULTRPT

EasyPACK™ 1B/2B module(FS20R06W1E3_B11, FS50R06W1E3_B11,
F4-75R06W1E3)

TRENCHSTOP™ IGBT+Diode (IKW40N120CS6)
EasyPIM™ 1B/2B module(FP15R12W1T4_B11, FP15R12W2T4)

2EDL23I06PJ

1200

44

Source/Sink current
typ. [A]Half-bridge

BatteryDC-DC(<3.5 kW)

BatteryDC-DC(<100 kW)Part number

1200

2.3/2.8

Singlehigh-side

1EDI20I12AF

4/3.5

DSO-8

Functional isolation,≥ 100 kV/µs CMTI,
separate sink/source
output, short circuit
clamping

High andlow side

IR2213S

2/2.5

DSO-16300 mil

SD and Separate power
supplyEasyPACK™ 1B/2B module(FS25R12W1T4_B11)

Functional isolation,≥ 100 kV/µs CMTI,
separate sink/source
output, short circuit
clamping

CoolSiC™ SiC MOSFET(IMW120R045M1- 3-pin,
IMZ120R045M1- 4-pin)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11, FF23MR12W1M1_B11)
TRENCHSTOPTM IGBT(IKW40N120CS6, IK(Q/Y)75N120CS6,
IK(W/Z)75N65ES5, IK(W/Z)75N65EH5)
EasyPACK™ 1B/2B module family(F3L100R07W2E3_B11, F3L150R07W2E3_B11,
FS50R12W2T4_B11, F4-3L50R07W2H3F_B11)
EconoPIM™ 2/3 module family(FP75R12KT4_B15, FP150R12KT4(P)_B11)
EconoPACK™ 2/3/4 module family(FS75R12KT4_B15, FS100R12KT4G(P)_B11,
FS100R12PT4, FS150R12KT4(P)_B11, FS150R12PT4)
EconoDUAL™ 3 module family(FF225R12ME4_B11, FF300R12ME4_B11)
EconoPack™+ module family(FS225R12OE4, FS300R12OE4)
34 mm module family (FF50R12RT4, FF150R12RT4)
62 mm module family (FF200R12KE4, FF300R12KE4)Singlehigh-side

1EDI60H12AH

10/9.4DSO-8
300milTypical gate-driverapplications

Recommended gate drivers(Uninterruptible power supply) continued
Application

Drivervoltageclass [V]

Driverconfiguration

Part number

Source/sink current Packages
typ. [A]Description

Suitable power switches

2EDL23I06PJ

2.3/2.8

DSO-14

Infineon SOI technology
with integrated bootstrap
diode, OCP, EN, FAULTRPT

IR2114SS

2/3

SSOP-24

DESAT, Synchronization,
SD-SOFT, FAULT-RPT

IRS2186(4)S

4/4

DSO-14,
DSO-8

600-V high and low side
driver with high current

TRENCHSTOP™
(IKW50N65H5, IKW75N65ES5, IKZ75N65ES5,IKFW75N60ET)
StrongIRFET™
(IRF200P222, IRF250P224, IRF300P226)
EasyPACK™ 1B/2B module family(FS20R06W1E3_B11, FS50R06W1E3_B11,
FB20R06W1E3, FB30R06W1E3)

1EDI60H12AH

10/9.4DSO-8
300milFunctional isolation, ≥100 kV/µs CMTI, separate
sink/source output, shortcircuit clamping, 125-ns
propagation delay

1EDI20I12MF

4/3.5

DSO-8

Functional isolation, ≥100 kV/µs CMTI, active
Miller clamp, short circuit
clamping

DSO-36

Reinforced isolation, VDE
0884-10, VIORM = 1420 V,
VIOTM = 8000 V; UL 1577,
VISO = 5000 V(rms); slew
rate control, DESAT,FAULT-RPT, OCP, SD-SOFT,
two level turn off

Half-bridge
600
High andlow side
Mainsinverter(<5 kVA)

1200

Singlehigh-side

1EDS20I12SVNEW SRC/2

Singlehigh-side
Mainsinverter(<100 kVA)

1ED020I12-FT

2/2

DSO-16300mil

1ED020I12-F2

2/2

DSO-16300milDual high-side 2ED020I12-F2

2/2

DSO-36

Singlehigh-side

10/9.4

DSO-8

1200

25

Singlelow-side

PFC/SMPS
20
25

Dual
low-side

Singlehigh-side

Active bridge
rectifier(<100 kVA)

1200

1EDI60I12AF

1ED44176N01F NEW 0.8/1.75

DSO-8

IRS44273L

SOT23-5

1.5/1.5

1EDN8511B

4/8

SOT23-6

2EDN8524F

5/5

DSO-8

IRS4427S

2.3/3.3

DSO-8

2/2

DSO-16300 mil

1ED020I12-F2

Singlehigh-side

1ED020I12-FT

2/2

DSO-16300 milDualhigh-side

2ED020I12-F2

2/2

DSO-36

CoolSiC™ SiC MOSFET(IMW120R045M1 - 3-pin, IMZ120R045M1 - 4-pin)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11)
TRENCHSTOP™ IGBT+Diode (IKW40N120CS6)
EasyPACK™ 1B/2B module family(FS25R12W1T4_B11)
EconoPIM™ 2 module family (FP25R12KT4_B15)

CoolSiC™ SiC MOSFET(IMW120R045M1 - 3-pin, IMZ120R045M1 - 4-pin)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11)
TRENCHSTOP™ IGBT+Diode (IKW40N120H3,
IKW40N120CS6, IKQ50N120CH3, IKQ75N120CS6)
EasyPACK™ 1B module (FS50R12W2T4_B11,
Functional isolation, ≥ 100 FS75R12W2T4_B11)
kV/µs CMTI, DESAT, active Easy 1B/2B 3-level (FS3L50R07W2H3F_B11,
Miller clamp, short circuit F3L100R12W2H3_B11)
clamping, FAULT-RST, two Easy 1B/2B Booster module (DF75R12W1H4F_B11,
level turn off (FT only)
DF120R12W2H3_B27)
EconoPIM™ 2/3 module (FP75R12KT4_B15,
FP150R12KT4(P)_B11)
Functional isolation, ≥100 kV/µs CMTI, separate EconoPACK™ 2/3/4 module (FS75R12KT4_B15,
sink/source output, short FS150R12KT4(P)_B11, FS150R12PT4)
34 mm module (FF50R12RT4, FF150R12RT4)
circuit clamping

OCP (±5%), EN,
FAULT-RPT, programmable fault clear time

Non-inverting low-side
driver with CMOS inputs

Functional isolation, 100
kV/µs CMTI, DESAT, active
Miller clamp, short circuit
clamping, FAULT-RST, twolevel turn off (FT only)

TRENCHSTOP™ IGBT+Diode(IKW30N65H5, IKW40N65WR5, IKFW40N60DH3E,
IKFW50N60DH3E, IKW50N65F5)
CoolMOS™ MOSFET(IPP60R060P7, IPP60R080P7, IPP60R099P7,
IPP60R120P7, IPP60R180P7, IPP60R280P7,
IPP60R360P7, IP(W/Z)65R019C7,IP(W/Z)65R045C7, IP(W/Z)65R065C7,IP(W/Z)65R095C7, IPW65R125C7, IPW65R190C7)
CoolSiC™ SiC MOSFET(IMW120R045M1 - 3-pin, IMZ120R045M1 - 4-pin)
CoolSiC™ SiC MOSFET module(FF11MR12W1M1_B11; FF23MR12W1M1_B11)
TRENCHSTOPTM 5 IGBT(IK(W/Z)75N65ES5, IK(W/Z)75N65EH5)
EasyPACK™ 1B/2B module family(FS50R12W2T4_B11, FS75R12W2T4_B11,
F3L75R07W2E3_B11, F3L100R07W2E3_B11)
34 mm module family(FF50R12RT4, FF150R12RT4)
CoolMOS™ MOSFET (IPP60R060P7, IPP60R099P7,
IPP60R180P7, IPP60R360P7, IP(W/Z)65R019C7,IP(W/Z)65R045C7, IP(W/Z)65R095C7,
IPW65R190C7)

45

46

Product portfolio overview

Driver configuration overview
Single-channel low-side driver
Allows low offset of the voltage
between input and output

Dual-channel low-side driver
Both channels allow individual
low voltage offsets, no interlock

High and low-side driver
Two non-interlockedchannels, one for high,one for low voltage offsets

Full-bridge driver
Four channels in a packagewith two independent half
bridges

Current sense
Current sensing across ahigh-voltage offset between
sense input and data output

Single-channel high-side driver
Allows high voltage offset
between input and output

Dual-channel high-side driver
Both channels allow individual highvoltage offsets, no interlock

Half-bridge driver
Two interlocked channels
where one of the channel
allows a high voltage offset

Three-phase bridge
Six channels in a
package with three
independent half
bridges

Synchronous-buck driverHigh speed drivers
for dual high side andlow side MOSFETs insynchronous rectified
buck converters

47

Product portfolio overview

Product portfolio overview
Infineon’s gate driver IC solutions are the expert’s choice. With more than 500 reliable and efficient gate driver solutions,
we provide a comprehensive portfolio for virtually any application. To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to application topology.

Three-phase gate driver ICs
Typical connection
DC+ bus
VCC
HIN
LIN
EN
FAULT

HO (x3)RCIN

VS (x3)ITRIP

LO (x3)

VSS

COM

To
load

Voltageclass [V]IO+/IOtyp. [mA]
350/6501200

250/500
350/540
165/375600

200/350250/500200

165/375

UVLO
on/off typ. [V]
11.4/10.4
8.6/8.2
10.4/9.4
11.2/10.2
11.7/9.8
11.7/9.8
9/8.1
8.9/8.2
11.1/10.9
11.1/10.9
8.9/8.2
10.4/9.4
11.1/10.9
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
9/8.7
8.7/8.3
8.6/8.2
10.4/9.4
11.7/9.8
9/8.1

Prop delay
Base PN
off/on typ. [ns]600/600
700/750550/550490/530
530/530400/425
530/500

530/530

425/675
600/1300
700/750490/530
530/530

Note 1: Please contact sales team for additional information48

6ED2230S12NEW
IR2233
IR2235
IR22386ED003L06-F2
6EDL04I06(N,P)
6EDL04N06P
IR2136
IR21363
IR21365
IR21368
IR21364
IRS2334
IRS2336
IRS2336D
IRS23364D
IRS23365D
IR213(0,2)
IR2131
IR2133
IR2135
6ED003L02-F2
6EDL04N02P

Technology

DC- bus

SOI
JI
JI
JI
SOI
SOI
SOI
JI
JI
JI
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JI
JI
JI
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JI
SOI
SOI

Brake chopper
Operaltional amplifier
Desaturation protection
EnableFault reporting
Integrated bootstrap diodeOver-current protection
Programmable dead time
Separate pin for logic ground
Shoot-through protection
Shutdown
DSO-20 WB
DSO-24
DSO-28 WB
DIP-28
LCC-32
MQFP-64TSSOP-28
VQFN-28
VQFN-34
CHIP1

VB (x3)

Base PN

Features (see page 58)✓✓✓

Package (see page 59)✓ ✓ ✓ ✓ ✓
✓
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✓ ✓ ✓
✓ ✓ ✓
✓ ✓ ✓
✓
✓

✓

✓
✓
✓

Product portfolio overview

Half-bridge gate driver ICs
VCC

Up to 1200 V
VCC

VB

IN

IN

HO

SD

SD

VS

To loadVoltageclass [V]1200

IO+/IOtyp. [mA]
1500/2500
2000/3000

UVLO on/off
typ. [V]12.2/11.2
10.2/9.3

Prop delay
Base PN
off/on typ. [ns]85/85
440/440

2500/2500
9.1/8.2

200/200650
290/700

360 / 700
1500/2500
78/169180/260

9.1 / 8.3
12.2/11.2
8.9/8.2
8.9/8.2
9/8
9/8
9/8
11/9

300/31085/85
220/220

N.A.

200/220200/350

8.9/8.2
200/750210/360
220/480
250/500600

290/600

360/700

1900/2300

2000/3000
2300/2800

4.1/3.8
8.9/8.2
8.9/8.2
8.9/8.2
8.9/7.7
8.6/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.6/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
9.1/8.3
12.5/11.6
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
8.9/8.2
10.2/9.3
9.1/8.3
12.5/11.6

200

290/600

8.9/8.2120

2000/6000
3000/6000
4000/6000

7/6.5*Coming soon

150/680
500/500
150/750
150/150
150/680
150/750200/220200/750300/310400/420220/180

270/680440/440300/310400/420150/160
150/680
47/47

2ED020I12-FI
IR2214
2ED2182S06 NEW
2ED21824S06 NEW
2ED2183S06 NEW
2ED21834S06 NEW
2ED2184S06 NEW
2ED21844S06 NEW
2ED2108S06 NEW
2ED21084S06 NEW
2ED2109S06 NEW
2ED21094S06 NEW
2ED21091S06 NEW
2ED2304S06F NEW
2ED020I06-FI
IR2304
IR25601
IR21531
IR21531D
IR25603
IRS2153(1)D
IR2108IR21084
IR2308
IR25606
IR2109IR21091
IR21094
IR2302
IR2103
IR2104
IR25602
IRS2890D
NEW
IR2111
IRS2304
IRS2103
IRS2104
IRS2111
IRS2(1,3)08
IRS21084
IRS2109
IRS21091
IRS21094
2EDL05N06P
2EDL05I06P
IRS2183
IR2183
IR(S)21834
IRS2184
IR2184
IR21844
IRS21844
IR2114
2EDL23N06P
2EDL23I06P
IRS2007
NEW
IRS2008NEW
2EDL8112*
2EDL8113*
2EDL8114*

Technology

COM LO

CT
JI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
CT
JI
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JI
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JI
JI

Comparator
Operational amplifier
Desaturation protection
EnableFault reporting
Integrated bootstrap diodeOver-current protection
Programmable dead time
Programmable shutdown
Self-oscillating (oscillator)
Separate pin for logic ground
Shoot-through protection
Shutdown
Soft over-current shutdown
DSO-8
DSO-14
DSO-16
DSO-16 WB
DSO-18DIP-8
DIP-14
SSOP-24
VDSON-8
VQFN-14
CHIP1

Typical connection

Features (see page 58)
✓ ✓
✓

✓
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✓
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✓
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Package (see page 59)
✓ ✓
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Note 1: Please contact sales team for additional information49

Product portfolio overview

Single high-side gate driver ICs
Typical connection

VCC
VCC
VB
Typical Connection

Voltageclass [V]

HO

IN

VS

IO+/IOtyp. [mA]UVLO on/off
typ. [V]1300/900

12/11.1

2000/2000

12/11

to load

Prop delay
Base PN
off/on typ. [ns]300/300
165/170
1750/1750

2200/2300

12/11.1

300/300

9.1/8.5

120/115
125/120

4000/3500
12/11.1

300/300
1200

4400/4100
4000/4000

16.9/16.4

80/80

5900/6200
12/11.1

300/300

11.9/1111.9/1111.9/11
9.1/8.5

460/460
460/460
460/460
125/1207500/6800
SRC/2000
SRC/2000
SRC/2000

10000/9400

125/120
12/11.1
300/300

650

4000/8000
4000/8000
160/240

4.5/5.0
4.5/5.0
9/8
8.6/8.2

250/500

200/170
41/37

160/2409/8

215/140

SRC=Turn on slew rate control

50

105/125

1600/3300
4000/8000

290/600
500
250
200
100

41/37
41/37
215/140

10.3/97.2/6.8
8.6/8.2
10.3/97.2/6.8
9.2/8.3
4.5/5.0600

Technology

IN

COM

150/200
105/125
150/150

1EDI05I12A
1EDC05I12AH
1ED020I12-F2
1ED020I12-B2
1ED020I12-FT
1ED020I12-BT
1EDI10I12M
1EDC10I12M
1EDI20N12A
1EDI20H12A
1EDC20H12A
1EDI20I12A
1EDC20I12A
1EDI20I12M
1EDC20I12M
1EDI30J12C
1EDI30I12M
1EDC30I12M
1EDI40I12A
1EDC40I12A
1EDI20I12SV
1EDU20I12SV
1EDS20I12SV
1EDI60N12A
1EDI60H12A
1EDC60H12A
1EDI60I12A
1EDC60I12A
1EDS5663H
1EDF5673F
IRS25752
IR2117
IR2118
IR212(7,8)
IR21271
IRS211(7,8)
IRS2127
IRS21271
IR2125
1EDF5673K
IRS20752
IRS10752

NEW

NEW

NEW
NEW
NEW

NEW
NEW
NEW
NEW
NEW

NEW
NEW
NEW
NEW

NEW

CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
CT
JI
JI
JI
JI
JI
JI
JI
JI
JI
CT
JI
JI

Active Miller clamp
Dedicated control for JFET
Desaturation protection
EnableFault reporting
Fault reset
Over-current protection
Separate pin for logic ground
Separate sink/source outputs
Soft over-current shutdown
Two-level turn-off
UL 1577
VDE 0884-10
DSO-8
DSO-8 300mil
DSO-16
DSO-16 WB
DSO-19
DSO-36
DIP-8
SOT23-6
TFLGA-13
CHIP1

Up to 200 V

Features (See page 58)

✓
✓
✓
✓
✓
✓

✓
✓
✓
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✓
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✓
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✓
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✓
✓ ✓
✓
✓ ✓
✓

✓

✓

✓
✓

Note 1: Please contact sales team for additional information

Package (See page 59)

✓ ✓ ✓
✓ ✓ ✓
✓ ✓ ✓

✓
✓
✓
✓
✓ ✓
✓ ✓
✓ ✓
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Product portfolio overview

Dual high-side/half-bridge
Typical connection
Up to 1200 V

Voltageclass [V]IO+/IOtyp. [mA]

1200

2000/2000
4000/8000
1000/2000
4000/8000
1000/2000

650

250

COM

VS 1

UVLO on/off
typ. [V]To load

Prop delay
off/on typ. [ns]12/11

165/170

4.2/3.98/7

4000/8000

37 / 37

4.2/3.9

Base PN
2ED020I12-F2
2EDF7275F
2EDF7175F
2EDS8265H
2EDS8165H
2EDF7235K
2EDF7275K

NEW
NEW
NEW
NEW
NEW
NEW

CT
CT
CT
CT
CT
CT
CT

Features(see page 58)✓✓✓

TFLGA-13

HO 1

DSO-36 (w/o 4 pins)

VB 1

VCC

DSO-16 WB

NC

DSO-1615 V

Up to 1200 V

VDE 0884-10

NC

UL 1577

NC

NC

Separate pin for logic groundVSS

To loadFault reset

VS 2

Fault reporting

HO 2

HIN 2

Disable

HIN 1

IN 2

Desaturation protection

IN 1

Deadtime control

VB 2

Active Miller clamp

VDD

Technology

5V

Package(see page 59)
✓

✓

✓

✓

✓
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Single low-side gate driver ICs

IN

IN

VCC

COM

OUT

Voltageclass [V]IO+/IOtyp. [mA]UVLO
on/off typ. [V]200

1000/4000
2000/7000
1000/2500

201

4000/8000

10.55/9
10.55/9
4.5/4.4
4.2/3.9
8/7
11.9/11.4
10.2/9.2
5/4.15
5/4.15
5/4.15
4.2/3.9
8/7
4.2/3.98.9/8

25800/1750
1500/1500
300/550
1700/1500

20
4000/8000
51600/3300

Prop delay
off/on typ. [ns]
50/60
50/60
50/50
45 / 45
45 / 45
50/50
50/50
50/50
50/50
19/19
200/150

Base PN
IR11662
IR11672A
IR1161
1EDN7550
1EDN8550
1ED44176N01
IRS44273
IR44252
IR44272
IR44273
1EDN7511
1EDN8511
1EDN7512
IR2121

Technology

To loadAutomatic minimum on time protection
EnableFault reportingOver-current protection
Programmable fault clear time
Programmable minimum on time
Separate sink/source outputs
Synchronous rectification
Truly differential inputs
DSO-8
DIP-8
SOT23-5
SOT23-6
WSON-6

Typical connection

Features(see page 58)

N-ISO ✓ ✓✓N-ISO ✓ ✓✓N-ISO ✓✓NEW N-ISO
NEW N-ISO
NEW N-ISO✓ ✓ ✓ ✓
N-ISO
N-ISO
N-ISO
✓
N-ISO
N-ISO
N-ISO
N-ISO
N-ISO
✓ ✓

Package(see page 59)
✓
✓
✓

✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓

Note 1: Common mode rejection (CMR) voltage range up to 80 V.

51

Product portfolio overview

High-side and low-side gate driver ICs
Typical connection

Voltageclass [V]1200

IO+/IOtyp. [mA]
2000/2500

UVLO on/off Prop delay
typ. [V]off/on typ. [ns]10.2/9.3

225/280

8.9/8.2

IR21064

JI

IR2301JI✓

8.9/8.2

IR25604

JI✓

4.1/3.8

IRS2301

JI

8.9/7.7

IRS2807D

JI✓✓

IRS2817D

JI✓✓

IR2101JI✓✓

IR2102

JI✓✓

200/200

4.1/3.8200/350

11.1/10.9600

200/220500/515210/360

8.9/8.2

150/160

250/500

8.6/8.2

105/125

IR2112JI

8.6/8.2

130/135

IRS2112JI

8.9/8.2

150/160

IRS2101

JI

290/600

8.9/8.2
8.9/8.2

360/700

1900/2300

2500/2500

12.5/11.6

200/220290/600
200

1000/1000
3000/3000
2000/6000

120*Coming soon

52

✓
✓
✓
✓

✓
✓

✓
✓

✓

✓

✓

✓

✓

✓
✓

✓

✓

✓

IR2181

JI

✓

✓

✓

IR21814JI✓✓

8.9/8.2

IRS21814JI✓✓

8.6/8.2

IR2113

JI

✓

✓

✓

IR25607

JI

✓

✓

✓

IRS2113JI✓✓

IRS2186

JI

IRS21864

JI

IRS21867

JI

94/120120/130

8.9/8.2

170/170✓✓

8.9/8.2

8.6/8.2

✓

✓
✓

✓

✓
✓

✓

✓

✓
✓

✓

✓

✓

✓
✓

✓
✓

✓

✓

94/120IR2110

JI

✓

✓

✓

✓

8.5/8.2

120/130

IRS2110

JI

✓

✓

✓

✓

8.9/8.2

150/160

IRS2005

JI

✓

✓
✓

9/8.2

60/60

IRS2011

JI

✓

✓

9/8.2

75/80

IR2011JI✓✓

8.6/8.2

65/95

IR2010JI

2EDL8012*

JI

✓

✓

JI
JI

✓
✓

✓
✓

7/6.5
47/47
3000/6000
2EDL8013*
4000/6000
2EDL8014*
Note 1: Please contact sales team for additional information✓✓

8.6/8.2

NEW

✓

✓

✓
✓

✓
✓

JI

220/180

✓
✓
✓
✓
✓

✓

SOI

6/5.5
2500/2500✓

2EDL05I06BF

8.9/8.2

500✓✓

IRS21818.5/8.2
4000/4000

JI
JI

✓

✓
✓
✓
✓

8.9/8.2
8.9/8.2

400/420

IRS2106
IRS21064✓

Package(see page 59)

8.9/8.2

9.1/8.2
2500/2500

NEW
NEW
NEW
NEW

JI
SOI
SOI
SOI
SOI
JI

Features(see page 58)

IR2213
2ED2106S06
2ED21064S06
2ED2181S06
2ED21814S06
IR2106

290/700
650

Base PN

CHIP1

To loadCOM LO

VQFN-14

VS

DIP-14

LIN

DIP-8

LIN

DSO-16 WB

HO

DSO-14

HIN

DSO-8

HIN

Shutdown

VB

Technology

VCC

Separate pin for logic ground

Up to 1200 V

Integrated bootstrap diode

VCC

✓

✓

✓

✓
✓

Product portfolio overview

Full bridge gate driver ICs
Typical connection
VBUSS (100 VDC MAX)

600

1200/1200
180/260

UVLO
Prop delay
on/off typ. [V] off/on typ. [ns]7.25/6.8

40/60

11/9

N.A.

Base PN
IR2086S
IRS24531D
IRS2453D

DIP-14✓✓

DSO-16✓✓

DSO-14✓✓Self-oscillating (oscillator)

JI
JI
JI

Programmable dead time

Features(See page 58)

Programmable minimum on time100

IO+/IOtyp. [mA]

EnableVoltageclass [V]

Automatic minimum on time protection*COM2 must be shorted to COM1 for proper operation**CD is optional

Technology

RSENSE

Over-current protection

CD**

Shutdown

CT

Shoot-through protection

IR2086S
VB1
HO1
CS
VS1
DELAY
CT
COM2*
COM1
LO2
VS2
LO1
VCC
HO2
VB2

RT

Integrated bootstrap diodeVCC (9 ~15V)

Package(see page 59)
✓

✓

✓

✓
✓
✓

✓

Dual low-side gate driver ICs

VCC

INB

OUTB

To loadVoltageclass [V]IO+/IOtyp. [mA]UVLO
on/off typ. [V]Prop delay
off/on typ. [ns]200

1000/4000
1000/4000
1000/4000

8.1/7.6
8.1/7.6
4.55/4.35
10.2/9.2

70/60
80/10060/25050/50

252300/3300

N.A.
65/85

20

5000/5000
4000/4000

4.2/3.9
8/7
4.2/3.9

19/19
19/19

Base PN
IR1168
IR11682
IR11688
IRS44262
IRS4426
IRS4427

N-ISO
N-ISO
N-ISO
N-ISO
N-ISO
N-ISO

IR25600

Features(see page 58)✓✓✓

TSSOP-8

COM

WSON-8

OUTA

DIP-8

INB

INA

Technology

INA

NC

DSO-8

To loadNC

Synchronous rectification

Typical connection

Package(see page 59)
✓
✓
✓
✓
✓
✓

✓

N-ISO

✓

✓

IR442(6,7)

N-ISO

✓

✓

2EDN752(3,4)

N-ISO

✓

✓

2EDN852(3,4)

N-ISO

✓

✓

✓

2EDN7424

N-ISO

✓

✓

✓

✓

✓
✓
✓

✓

✓

53

Product portfolio overview

Complementary: current sense ICs
Typical connection

OC

VS

COM

To motor phase

Voltage class [V]600

IR2175
IR25750JI
JI

Current sense

Base PN

Technology

COM

Features(see page 58)✓✓✓

SOT23-5

Overcurrent

DIP-8

VB

DSO-16 WB

V+

PO

DSO-8

VCC

PWM out

Over-current protection

VCC

Package(see page 59)✓✓✓

Complementary: high-voltage start-up IC
Typical connection

VOUT
1

R1 COM
R2

VIN
5

2

VTH
3

ENN
4

Voltage class [V]480

IRS25751

JI

EnableBase PN

Technology

DC bus (-)

Features(see page 58)✓✓

SOT23-5

CVCC
VCC (-)High voltage start-up

VCC (+)

From AUX
supplyOver temperature shutdown

DC bus (+)

Package(see page 59)✓✓

Driver boards
Typical connection
VDDS

VDDP
GNDP

Voltage class [V]
1700
1700

54

IO+/IOtyp. [mA]
30/30
30/30

VB+
COMB
VBVCEsatB
GateB
COMB

UVLO
Prop delay oon/off typ. [V] ff/on typ. [ns]10.9/9.3
670/580
10.9/9.3
670/580

Features(See page 58)
2ED300C17-S✓✓✓
2ED300C17-ST ✓✓✓AG-EICE-45

INA, INB
Mode, Reset

Over-current protection

EiceDRIVER™
2ED300C17-S
2ED300C17-ST

Fault reset

GateA
COMA

Fault

Desaturation protection

Control
Unitwith 15 V
Interface

Soft over-current shutdown

VA+
COMA
VAVCEsatA

GNDS

✓
✓

Package(see page 59)✓✓

Base PN

Product portfolio overview

Work. volt. IO+/IOtyp. [mA]
class [V]UVLO on/ Prop delay off/
Base PN
off typ. [V] on typ. [ns]DSO-36

DSO-28

DSO-20

DSO-16 WB

DSO-16 NB

DSO-14

DSO-8

VDE 0884-10

UL 1577

Two-level turn-off

Synchronous rectification

Shutdown

Shoot-through protection

Separate pin for logic groundSelf-oscillating (Oscillator)

Programmable dead time

Programmable frequency

Over-current protection

Fault reporting

EnableDesaturation protection

Operational amplifier

Technology

Configuration

BufferAutomotive gate driver ICs

Package(see page 59)

Features (See page 58)

Single high-side

1200

2000/2000 12.5/11.7

215/215

1EDI2001ASCT✓ ✓ ✓ ✓

✓

✓ ✓ ✓

✓

Single high-side

1200

2000/2000 12.5/11.7

215/215

1EDI2002ASCT✓ ✓ ✓ ✓

✓

✓ ✓ ✓

✓

✓

✓ ✓ ✓

Single high-side

1200

2000/2000 12.5/11.7

215/215

1EDI2010ASCT✓ ✓ ✓ ✓

Single high-side

1200

2100/2100

12/11

165/170

1ED020I12FA2

CT

✓

✓

✓ ✓

✓

✓

✓ ✓ ✓

✓
✓

Single high-side

1200

2000/2000

12/11

1900/1750

1ED020I12FTA

CT

Single high-side

600

500/500

8.6/8

140/140AUIRS2123

JI

Single high-side

600

290/600

8.6/8.2

140/140AUIRS2117S

JI

Single high-side

600

290/600

7.2/6.8

150/150AUIRS21271S

JI

✓ ✓

✓

Single high-side

600

290/600

10.3/9150/150AUIRS2127S

JI

✓ ✓

✓

Single high-side

600

290/600

8.6/8.2

140/140AUIRS2118S

JI

Single high-side

600

500/500

8.6/8

140/140AUIRS2124

JI✓

High and low-side

600

1900/2300

8.9/8.2

135/135AUIRS21811SJI✓High and low-side

600

1900/2300

8.9/8.2

200/160AUIRS21814SJIHigh and low-side

600

1900/2300

8.9/8.2

200/160AUIRS2181S

JIHigh and low-side

600

3500/3500

8.9/8.2

90/90

AUIRS2191S

JIHigh and low-side

600

200/350

4.1/3.8200/220AUIRS2301S

JIHigh and low-side

600

2500/2500

8.5/8.2

120/140AUIRS2113S

JI

Half-bridge

1200

2000/2000

12/11

165/170

2ED020I12FA

CT

Half-bridge

100

1000/1000

7.3/6.8

N.A.

AUIR2085S

JI

✓

✓

✓

✓
✓

✓

✓
✓

✓

✓

✓

✓
✓

Three-phase600

200/350

8.9/8.2

530/530AUIRS2336S

JI

Single low-side

200

3000/6000

10.2/9.3

60/90

AUIRS1170S

N-ISO

Single low-side

40

10000/10000 11.7/10.5

230/150

AUIR08152S

N-ISO ✓

Dual low-side

20

6000/6000

55/40

AUIRB24427S

N-ISO

11.5/10

✓
✓

✓

✓

✓

✓

✓ ✓

✓ ✓ ✓ ✓

✓ ✓ ✓

✓ ✓

✓
✓

✓
✓

✓
✓
✓
✓

✓

✓

Automotive three-phase bridge driver IC
Product nameOperating
range
[V]

Drives stage

D.C.-range@20 kHz[%]

Numbers of integrated OpAmps Adjustable
for load current dead timemeasurement

TLE7183F

5.50 ... 28.00

1.50/1.50 A

0 ... 100

1

TLE7183QU

5.50 ... 28.00

1.50/1.50 A

0 ... 100

1

TLE7184F
TLE7184F-3V1
TLE7186F

7.00 ... 32.00

12.50/9.00 Ω
12.50 Ω

0 ... 95

TLE7185E

5.50 ... 32.00

12.50/9.00 Ω

0 ... 95

SIL3 features

Diagnosis

Package•

OT, UV, OV, OC, OCD

VQFN-48•

OT, UV, OV, OC, SCD

TQFP-48 EP

1•

UV, OV, OC, SCD, OT, VDD
supervision

VQFN-48

0•

UV, OV, SCD, OT

DSO-36 EP
VQFN-48

TLE7189F

5.50 ... 28.00

1.50/1.50 A

0 ... 100

3•

UV, OV, SCD, OT,VDD supervision

TLE7189QK

5.50 ... 28.00

1.50/1.50 A

0 ... 100

3•

UV, OV, SCD, OT,VDD supervision

LQFP-64AUIRS20302

8.00 ... 17.00
Output offset 0.20/0.35 A
200 V

0 ... 95

1 (SC protection)

One error flag for OTW,UV, CS

DSO-28(28 lead SOIC): System IC for fans and pumps with integrated LDO and PWM interfcace

1

55

56

Product portfolio overview

Gate driver IC chips for integrators

IO+/IOtyp [mA]typ prop delay:
Base PN
off/on [ns]105/250

Single high-side driver

250/500600
290/600
1200

2000/2500

150/200
105/125
150/150225/280

290/700
650

200/200
2500/2500
210/360
290/600

High-side and low-side
600

1900/2300
2500/2500

500
200

4000/4000
2500/2500
1000/1000
3000/3000

150/160
130/135
150/160
200/220220/180
94/120120/130
170/170
120/130
60/60
65/95

2500/2500
200/200650
290/700

Half bridge

360 / 700

300 / 310

180/260na
150/150
150/680600

290/600

150/750

1900/2300

200/750220/180
270/680
700/750200/2201200

250/500
165/375

490/530
530/530

Three-phase

400/425600

200/350

530/500
530/530250/500

425/675
700/750

IR2117
IR2127
IR2128
IRS211(7,8)
IRS2127
IR2213
2ED2106S06
2ED21064S06
2ED2181S06
2ED21814S06
IR2101
IRS2112
IRS2101
IRS2106
IRS2181
IR2113
IRS2113
IRS2186
IRS2110
IRS2011
IR20102ED2182S06
2ED21824S06
2ED2183S06
2ED21834S06
2ED2184S06
2ED21844S06
2ED2108S06
2ED21084S06
2ED2109S06
2ED21094S06
2ED21091S06
2ED2304S06
IR21531
IRS2153(1)D
IRS2304
IRS2103
IRS2104
IRS2111
IRS2108
IRS2308
IRS2109
IRS2183
IRS2184
IR2233
6ED003L06-F2
6EDL04I06(N,P)
6EDL04N06P
IR2136
IR21363
IR21368
IR21364
IRS2336D
IRS23364D
IR213(0,2)
IR2135

NEW
NEW
NEW
NEW

NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW

JI
JI
JI
JI
JI
JI
SOI
SOI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
JI
SOI
SOI
SOI
JI
JI
JI
JI
JI
JI
JI
JI

Shutdown

Shoot-through protection

Separate pin for logic groundSelf-oscillating (oscillator)

Programmable shutdown

Programmable dead timeOver-current protection

Integrated bootstrap diodeFault reporting

EnableCurrent sense

Operational amplifier

CHIP1

Voltageclass [V]Under voltage lockout

Driver configuration

Technology

Infineon offers gate driver IC chips and wafers to address the on-going trend of integrating the driver, power stages,
controllers and other components into a smaller, more efficient single package.

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

Features (See page 58)
✓
✓

✓
✓

✓
✓

✓

✓

✓

✓
✓
✓

✓
✓
✓
✓
✓

✓
✓
✓

✓
✓

✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓

✓

✓

✓

✓

✓

✓

✓

✓
✓

✓

✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
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✓
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✓
✓
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✓
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✓
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✓
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✓
✓

✓
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✓
✓
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✓
✓
✓
✓
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✓
✓
✓
✓
✓
✓
✓
✓
✓
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✓
✓

✓
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✓
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✓
✓
✓

✓

✓
✓
✓

✓

57

Product portfolio overview

FeaturesAddressing various application requirements, Infineon delivers solutions with an assortment of features intended to
optimize performance, minimize size and reduce cost. Below is a table of additional gate driver IC features available inthe current portfolio.

58

Features

Abbreviation

Benefits

Active Miller clamp

M-CLAMP

Protection against inadvertent dynamic turn-on because of parasitic Miller effects

Active shutdown

SD-ACT

Ensures a safe IGBT off-state in case the output chip is not connected to the power supply or anundervoltage lockout is in effect

Brake chopper

BRAKE

Integrated brake IGBT driver with protection

Comparator

CMP

General purpose comparator included

Current sense

CS

Senses the motor phase current through an external shunt resistor,
converts from analog to digital signal, and transfers the signal to the low side

Dedicated JFET control

JFETDRIVE

Optimized to drive SiC JFET

Desaturation protection

DESAT

Protects the IGBT at short circuit

EnableEN

Dedicated pin terminates all outputs

Fault reporting

FAULT-RPT

Indicates an overcurrent or under-voltage shutdown has occurred

Fault reset

FAULT-RST

Dedicated pin resets the DESAT-FAULT-state of the chip

High-voltage start-up

HVSTART

Provides easy and fast circuit start-up while enabling low circuit standby losses

Integrated bootstrap diode

BSD

Integrated bootstrap reduces BOM

Operational amplifier

OPAMP

An independent op-amp for current measurement or overcurrent detection

Self-oscillating (oscillator)

OSC

Integrated front end oscillator

Over-current protection (ITRIP)

OCP

Ensures safe application operation in case of overcurrent

Over temperature shutdown

SD-OTInternal over temperature protection circuit protects the IC against excessive power loss
and overheating

Programmable deadtime

DT-PROG

Deadtime is programmable with external resistor for flexible design

Programmable fault clear time

FLTC

The length of the fault clear time period (tFLTC) is programmed by external capacitor whichconnected between FLTC and VSS (CFLTC).

Programmable shutdown

SD-PROGA shutdown feature has been designed into a pin

Separate pin for logic ground

SEP-GND

Dedicated pin or logic ground for improved noise immunity

Separate sink/source outputs

SEP-OUT

Simplifies gate resistor selection, reduces BOM, and improves dV/dt control

Shoot-through protection

STP

Additional shoot-through protection logic such as interlock

Short-circuit clamping

SC-CLAMP

During short circuit the IGBT’s gate voltage tends to rise because of the feedback via the Miller
capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly
higher than the supply voltage.

Shutdown

SD

Dedicated pin disables the IC outputs

Soft overcurrent shutdown

SD-SOFT

Dedicated pin turns off the desaturated transistor, preventing overvoltages

Truly Differential Inputs

TDI±70 VDC and ±150 VAC ground-shift robustness of low-side gate driver ICs

Two-level turn-off

TLTO

Lowers VCE overshoots at turn-off during short circuits or overcurrent events

UL 1577

UL

Double galvanic isolation certification

Undervoltage lockout

UVLO

Ensures safe application operation by avoiding unexpected driver behavior at low voltages

VDE 0884-10 or VDE 0884-11

VDE

Reinforced galvanic isolation certifications for non-optical couplers

Product portfolio overview

Infineon gate driver package options
DSO-8 (SOIC-8N)

DSO-8 300-mil(SOIC-8WB)

DSO-14 (SOIC-14N)

DSO-16 (SOIC-16N)

DSO-16 300-mil(SOIC-16WB)

DSO-18

DSO-19

DSO-20 (SOIC-20WB)

DSO-24(DSO-28 w/o 4 pins)

DSO-28 (SOIC-28WB)

DSO-36

DIP-8 (PDIP-8)

DIP-14 (PDIP-14)

DIP-28 (PDIP-28)

LLC-32 (PLCC-44)

LQFP-64

MQFP-64

SOT23-5

SOT23-6

SSOP-24

TFLGA-13

TQFN-48

TSSOP-8

TSSOP-28

VQFN-14(MLPQ 4X4 14L)

VQFN-28(MLPQ 5X5 28L)

VQFN-34(MLPQ 7X7 48L)

VQFN-48

WSON-6

WSON-8

Driver board

CHIP

59

Product portfolio overview

Complementary: Opto-isolated solid state relays
Typical connection

Load voltage
[V]

400

Load current[mA]
1000 AC-DC
140 AC-DC
120 AC-DC
240 AC-DC
140 AC-DC
120 AC-DCRDS(on)[Ω]--27/7
35/9
6/2
27/7
35

Isolation voltage[VRMS]
3750
4000
4000
4000
4000
4000

150 AC-DC

24

4000

50 AC-DC

160

4000

170 AC-DC
190 AC-DC
170 AC-DC
170 AC-DC
150 AC-DC
550 AC-DC
360 AC

15/4.25
10/3
8
10
24
0.7/0.25
5

4000
4000
4000
4000
4000
4000
1500

300

250
200
150

550 DC

1.5

4000

375 AC-DC

54000

1500 DC
1000 AC
1000 AC/2000 DC
2000 AC/4000 DC
1000 AC/2000 DC
2500 AC/4500 DC
4000 AC/6000 DC
2500 AC/4500 DC

0.25
0.5
0.5/0.15
0.1/0.035
0.5/0.15
0.1/0.04
0.05/0.015
0.1/0.04

4000
4000
4000
4000
4000
4000
4000
4000

100

60

20
10 nA leakage current

1

www.infineon.com/SSR
60

Package(see page 61)

Base PN
PVX6012
PVU414
PVT412L
PVT412A
PVT412
PVT422
PVA3354N
PVA3324N
PVA3055N
PVA3054N
PVT312L
PVT312
PVT322A
PVT322
PVA2352N
PVT212
PVR130(0,1)
PVD1354N
PVD1352N
PVA1354N
PVA1352NPVDZ172N
PVAZ172N
PVG6131
PVG612A
PVG612
PVN0131
PVN012A
PVN012

DIP-16 (with 10 pins)

4

SMT-8 (with 4 pins)

3

LOAD

DIP - 4

5

SMT-8

2

DIP-8

Microelectronic relays (MER) are power
MOSFET or IGBT output photovoltaic relays
where the output switch is controlled byradiation from a GaAlAs light emitting diode(LED) optically isolated from the output.
MERs are a good choice to replacemechanical relays.

+

SMT-6

AC or DC

DIP-6

6

DIP-14 (with 4 pins)

1

✓
✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓
✓
✓
✓

✓
✓
✓
✓

✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓

✓
✓
✓
✓
✓
✓

Product portfolio overview

Infineon solid-state relay package options
DIP-6

DIP-8 (with 4 pins)

SMT-8 (with 4 pins)

SMT-8

DIP-8

DIP-14 (with 4 pins)

DIP-16 (with 10 pins)

SMT-6

Complementary: Opto-isolated gate drivers/voltage sources
Typical connection

(-) 3
(+) 5

Output voltage DC
[V]
5/10
3/6
5/10
5
5

Short current
[µA]
10/5
2/1
10/5
8
5

Nominal control
current (DC) [mA]
5
5
10
10
10

Isolation voltage[VRMS]
3570
3570
2500
4000
4000

Base PN
PVI5033R
PVI5013R
PVI1050N
PVI5080N
PVI5050N

SMT-8 (with 4 pins)

CathodePhotovoltaic isolators generate an electric­ally isolated DC voltage upon receipt of a DC input signal
and are capable of directly driving MOSFET or IGBT
gates. The output is controlled by radiation from a
GaAlAs light emitting diode (LED) optically isolated
from the output

DIP-8 (with 4 pins)

DC

SMT-8

(+) 2

DIP-8

(-) 8

Anode

Package(see page 61)
✓ ✓
✓ ✓
✓ ✓
✓ ✓
✓ ✓

www.infineon.com/SSR
61

New product highlights

New product highlights
1EDC Compact - 1200 V single-channel, galvanically isolated gate driverfamily in 300 mil package with UL certification NEW
Infineon’s new EiceDRIVER™ 1EDC Compact galvanically isolated family is recognized under UL 1577
with an insulation test voltage of VISO = 2500 V(rms) for 1 min. The galvanically isolated 1EDI Compact
150 mil and 300 mil families without UL certification are also available.

1EDC Compact

Typ. output
current [A]Outputconfiguration

1EDC60I12AH

10 / -9.4

300

1EDC40I12AH

7.5 / -6.8

300

1EDC20I12AH

4 / -3.5

1EDC05I12AH

1.3 / -0.9

1EDC60H12AH

10 / -9.4

125

1EDC20H12AH

4 / -3.5

125

1EDC30I12MH

5.9 / -6.2

300

1EDC20I12MH

4.4 / -4.1

1EDC10I12MH

2.2 / -2.3

Separate sink/
source outputs

Active Miller
clamp

Product features

Prop.
delay [ns]››1200 V input-to-output isolation voltage››Functional isolation››DSO-8 300 mil wide body package with 8 mm creepage distance››For 600 V/1200 V IGBT, MOSFET and SiC MOSFET devices andmodules››Up to 10 A typical peak rail-to-rail output››More than 100 kV/µs CMTI››Suitable for operation at high ambient temperature››Separate source and sink outputs or active Miller clamp››Optimized pin-out for low inductance power supply››No need to adapt signal voltage levels between
microcontroller and driver››Short-circuit clamping››Active shutdown

300
300

300
300

Potential applications››Photovoltaic string inverters, EV charging››Industrial drives, AC and brushless DC motor drives, high-voltage DC-DC converter and DC-AC inverter››UPS systems

Typical application diagram
Separate sink/source outputs
+5 V
100n
SGND

VCC1
GND1

IN

VCC2
OUT+

IN+

OUT-

IN-

GND2

+15 V
1µ
10R
3R3

Active Miller clamp
+5 V
100n
SGND
IN

VCC1
GND1

10R

CLAMP

IN+

VCC2

IN-

GND2

www.infineon.com/1EDcompact

62

OUT

1µ

+15 V

Evaluation board available:
EVAL-1EDC20H12AH-SIC

New product highlights

1EDS-SRC - 1200 V single-channel, reinforced-isolated driver family withslew-rate control NEW
The new EiceDRIVER™ slew-rate control (SRC) family serves the latest generation of highly
efficient low-EMI electric drive systems with improved efficiency. This is the first high-voltage
isolated gate driver on the market with dynamic slew-rate control (SRC) which allows on-the-fly
dV/dt control of electric drives through precise gate current control, providing the best trade-off
between minimum power dissipation and minimum EMI depending on operating conditions.

inverters››Low EMI during low-load conditions and high efficiency
during high-load conditions››Reduction or elimination of dV/dt filter

Part number

Isolation rating

1EDS20I12SV

Reinforced isolation according VDE 0884-10(VIORM = 1420 V) and UL 1577 certified with
VISO = 5 kV(rms) for 1 min

1EDU20I12SVUL 1577 certified with VISO = 5 kV(rms) for 1 min

1EDI20I12SV

Functional isolation

Feature - real time gate current control:
Gate current during idle load condition
SRC controlled
gate current in 11 levels
Adjustable gate current››Real-time adjustable gate current control››DESAT short circuit protection››Overcurrent protection››Soft turn-off shut-down››Two-level turn-off››Drive power modules up to 900 A››Unique: NPC1 short-circuit protection for three-level

IGATE [A]Product features

Potential applications››AC and brushless DC motor drives››High-voltage DC-DC converters››UPS systems››Welding››Servo drives

Preboost phase
Time

Simplified application diagram
5V

5V
VCC2
VCC1

VCC2

/FLT

DESAT

RDY2

CS

RDY1

RD

OCOFF

CD

RSENSE

C1
PADP

Control unit

Evaluation board available:
EVAL-1EDS20I12SV

RDESATON

DDESAT

CDESAT
RS

T1

T2

INP
INN
EN
RF
CF

PADN

RSOFF

VZ
OFF

SIGI

SOFF

GND1
GND

CZ

SPEED

SIGO

www.infineon.com/SRC

GATE

ROFF

PRB
VEE2

RPRB2
C3

RPRB1

VCC2
C2

GND2

63

New product highlights

2ED2304S06F - 650 V Half-bridge gate driver with integrated bootstrap
diode (BSD) NEW
The 2ED2304S06F is a 650-V Half-bridge gate driver. Its Infineon thin-film-SOI technology provides
excellent ruggedness and noise immunity. The output drivers features a high pulse current buffer
stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V.
Additionally, the offline clamping function provides an inherent protection of the parasitic
turn-on by floating gate conditions when IC is not supplied.
Typical application diagram
DC-Bus
VCC

VCC

+5 V

VB
HO
VS

to Load

µC
PWM_H

HIN

PWM_L

LIN

GND

GND

LO
to Opamp / comparator- DC-Bus

Product features››Infineon thin-film-SOI-technology››Fully operational to +650 V››Floating channel designed for bootstrap operation››Output source/sink current capability +0.36 A/-0.7 A››Integrated ultra-fast, low RDS(ON) Bootstrap Diode››Tolerant to negative transient voltage up to 100 V (pulse
width is up 300 ns) given by SOI-technology››10 ns typ., 60 ns max. propagation delay matching››dV/dt immune ±50 V››Gate drive supply range from 10 V to 20 V››Undervoltage lockout for both channels››3.3 V, 5 V and 15 V input logic compatible››RoHS compliant

Potential applications››Motor drives, general purpose inverters››Refrigeration compressors››Half-bridge and full-bridge converters in offline AC-DC
power supplies for telecom and lighting
Power dissipation of Infineon SOI
120.3°Infineon SOI HS+LS driverMax. temperature 66.6°

Standard HS+LS driverMax. temperature 122.2°

20.4°

DC = 300 V; CoolMOS™ P7 in D-Pak; 300 kHz switching frequency

www.infineon.com/2ED2304

64

New product highlights

6ED2230S12T - 1200 V Three-phase gate driver with integrated bootstrap diodes(BSD) and overcurrent protection (OCP) NEW
The 6ED2230S12T is a 1200-V Three-phase SOI gate driver with integrated bootstrap diode andovercurrent protection, with typical 0.35 A source and 0.65 A sink currents in a DSO-24 package(DSO-28 with 4 pins removed) for driving IGBTs. Proprietary HVIC and latch-immune CMOS
technologies enable a robust monolithic design. A current-trip function which terminates all
six outputs can also be derived from shunt resistor. An open-drain FAULT signal is provided
to indicate that an overcurrent or undervoltage shutdown has occurred. Fault conditions arecleared automatically after a delay programmed externally via an RC network. The output
drivers feature a high-pulse current buffer stage designed for minimum driver cross conduction.
Propagation delays are matched to simplify the driver's use in high-frequency applications.

Product features››Infineon thin-film SOI technology››Fully operational to +1200 V››Floating channel designed for bootstrap operation››Output source/sink current capability +0.35 A/-0.65 A››Integrated ultra-fast, low RDS(ON) bootstrap diode››Tolerant to negative transient voltage up to -100 V(pulse width is up 700 ns) given by SOI-technology››Undervoltage lockout for both channels››3.3 V, 5 V, and 15 V input logic compatible››Overcurrent protection (ITRIP ±5% reference)››Fault reporting, automatic fault clear and enable function on the same pin (RFE)››Matched propagation delay for all channels››Integrated 460 ns deadtime protection››Shoot-through (cross-conduction) protection››2.5 kV HBM ESD protection

Typical application diagram

Typical applications››Industrial drives, motor control, general purpose inverters››Commercial air-conditioning (CAC)
Negative transient voltage robustness of Infineon SOIPW (ns)
0

0

200

400

600

800

1000

-20

Vs (V)-40

Evaluation board available:
EVAL-M1-6ED2230-B1

SOA

-60
-80

-100
-120

Negative transient voltage SOA characterization @ VBS=15 V of
6ED2230S12T

65

New product highlights

2ED2106/08/09/091S06 Gate driver family NEW
2ED2181/82/83/84S06 High-current gate driver family NEW
650 V Half-bridge & high and low-side gate driver with integrated BSD
The 2ED2106/08/09/091S06 gate driver family and 2ED2181/83/84S06 high-current gate driver family are high-voltage
power MOSFET and IGBT driver families with Half-bridge & high and low-side configuration. Based on SOI-technology, thisdevice has excellent robustness and noise immunity with the capability to maintain operational logic at negative voltagesof up to -11 VDC on the VS pin (VCC=15 V) on transient voltages. With no parasitic structures, the device is immune to parasitic latch-up at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration
which operates up to 650 V.
Product features››Infineon 650 V thin-film SOI-technology››Ultra-fast bootstrap diode integration››Tolerant to negative transient voltage at least -80 V with 500 ns pulse width››dV/dt immune to ±50 V››Logic input withstands swing to -5 V››Logic and power ground ±5 V offset››Gate drive supply range from 10 to 20 V››Undervoltage lockout for both channels››3.3 V, 5 V and 15 V input logic compatible››Schmitt trigger inputs with hysteresis and pull-up or pull-down
Outputsource/sink current

Part
2ED2106S06F

NEW

2ED21064S06J

NEW

2ED2108S06F

NEW

2ED21084S06J

NEW +0.29 A/-0.7 A

2ED2109S06F

NEW

2ED21094S06J

NEW

2ED21091S06F

NEW

2ED2181S06F

NEW

2ED21814S06J

NEW

2ED2182S06F

NEW

2ED21824S06J

NEW

2ED2183S06F

NEW

2ED21834S06J

NEW

2ED2184S06F

NEW

2ED21844S06J

NEW

66

Input logic

Configuration

Deadtime

HIN, LIN

Hide side + Low sidenone

HIN, /LIN
IN, /SD

Half-bridge

IN, DT/SD

HIN, LIN+2.5 A/-2.5 A
HIN, /LIN
IN, /SD

Half-bridge

Package
DSO-8
DSO-14

540 nsDSO-8

Programmable

DSO-14

540 nsDSO-8

Programmable
Hide side + Low side

Simplified application diagrams

Potential applications››Motor drives, general purpose inverter drives››Half-bridge and full-bridge converters
in offline AC-DC power supplies fortelecom and lighting››Solar inverter and UPS drives

None

DSO-14
DSO-8
DSO-8
DSO-14400 nsDSO-8

Programmable

DSO-14400 nsDSO-8

Programmable

DSO-14400 nsDSO-8

Programmable

DSO-14

New product highlights

1ED44176N01F - 25 V Low-side gate driver with integrated overcurrent protection,
fault reporting, and enable functionality NEW
The 1ED44176N01F is a low-voltage, non-inverting gate driver designed for ground-referenced
applications such as digitally controlled power-factor correction (PFC) circuits requiring overcurrent protection (OCP). OCP is typically implemented using a current measurement circuit with acomparator such as LM293 and a network of resistors and capacitors. 1ED44176N01F provides up
to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate
current-sensing threshold tolerance of ±5%. 1ED44176N01F also integrates fault-output reportingto the controller and driver enable functionality on the same pin. The driver IC also has separate
logic and power ground pins for operational robustness.
Product features››Overcurrent detection with positive voltage input››+0.8 A/-1.75 A output source/sink current capability››+0.5 V overcurrent threshold with ±5% tolerance››Single pin for fault output and enable function››Programmable fault clear time››CMOS Schmitt-triggered inputs››3.3 V, 5 V and 15 V input logic-compatible››Output in phase with input››Separate logic and power ground››2 kV ESD HBM

Simplified application diagram
VOUT

VIN
Microcontroller
VDD

VCC
1ED44176N01F

I/O1

I/O2
CFLTC

IN

VCC

EN/FLT

VSS

FLTC

OUT

OCP

COM

GND

Potential applications››General purpose low-side gate driver for single-ended topologies (e.g. digitally controlled PFC or digital power supplies)››Residential and commercial air conditioners››Home appliances››Industrial applications

Application note, PSPICE or SiMetrix
models, and evaluation board,
EVAL-1ED44176N01F are available atwww.Infineon.com/1ED44176

Key features

Key specifications

System benefits››Integrated overcurrent protection com-››0.5 V overcurrent threshold with››Potential space savings up to››Single pin for fault output and enable››Internal Schmitt trigger comparator for››Programmable fault clear time››External capacitor (CFLTC) sets the length››Flexible fault clear time set-up for differ-››Low quiescent supply current››Max IQCC: 750 µA››Minimizes power consumption››Separate logic ground and gate driver››VSS and COM pins››Avoids noise coupling from output to››Undervoltage lockout (UVLO)››Specific UVLO level for IGBTs››Eliminates switching loss at low

parator with accurate OCP threshold

function

returnprotection

accurate ±5 percent tolerance

the enable functionof the fault clear time

(typ. on/off = 11.9 V / 11.4 V)

50 percent and cost savings up
to 20 percent compared to thediscrete solution

ent microcontroller processing speeds

input which improves noise immunity

VCC supply voltage

www.Infineon.com/1ED44176

67

New product highlights

1EDN7550 and 1EDN8550 - 1-channel low-side gate driver family with truly
differential inputs prevents false triggering of power MOSFETs NEW
The input signal levels of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver IC. If
in the application the ground potential of the gate driver IC shifts excessively false triggering of the gate driver IC can occur.
The 1EDN7550/1EDN8550 gate driver ICs have truly differential inputs. Their control signal inputs are largely independent from the ground potential. Only the voltage difference between its input contacts is relevant. This prevents false
triggering of power MOSFETs.
Product features››Truly differential inputs››4 A source current››8 A sink current››Separate source/sink outputs››Low-ohmic output stage››29 ns input minimum pulse width››7 ns propagation delay accuracy››5 A reverse current robustness of the outputs››4 V and 8 V UVLO versions››SOT-23 package, 6 pins

Potential applications››Servers››Telecom››DC-DC converters››Telecom bricks››Power tools››Industrial SMPS››Wireless charging››Solar micro inverters

1EDN7550 driving CoolMOS™ SJ MOSFET on 1-layer PCB
12 V

CoolSiC™

Rbias

PWM
controller

VDD
PWM
CS

RCM1

in +

RCM2

in -

CoolMOS™
P7
OUT source

1EDN
7550

OUT sink

Cbulk

RG1
RG2
Parasitic
sourceinductance

Cbias
Parasitic
GND
Inductance
GND

1EDN8550 driving Kelvin source CoolMOS™ superjunction (SJ) MOSFET in boost PFC
12 V
Rbias

PFC
controller

CoolMOS™
P7, C7 or G7

VDD
OUT
CS

IN + R
CM1

in +

IN -

in -

RCM2

OUT source

1EDN
8550

OUT sink
Cbias

CS
GND

www.infineon.com/1EDN-TDI
68

CoolSiC™

RG1
RG2

Kelvin-source contact

Rcurrent sense

Parasitic
sourceinductance

Cbulk

New product highlights

GaN EiceDRIVER™ family NEW
Single-channel isolated gate driver ICs for high voltage GaN switches
CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H.
They ensure robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts andshortening time-to-market.
Product features››Low ohmic outputs:
Source: 0.85 Ω
Sink: 0.35 Ω››Single-channel galvanic isolation:
Functional:
VIO= 1500 VDC			 VIOWM = 510 Vrms (16-pin DSO)
			 VIOWM = 460 Vrms (LGA 5x5)
Reinforced:
VIOTM = 8000 Vpk
			(VDE 0884-10 pending)			 VIOWM = 1420 VDC
CMTI min: 		
200 V/ns››Timing:
Minimum output pulse width: 18 ns
Propagation delay accuracy: 13 ns

Potential applications››Totem-pole PFCs››Vienna rectifiers››Multi-level topologies››Resonant LLC

Evaluation board available:
EVAL_1EDF_G1_HB_GANHigh power SMPS application example
Totem pole
Full-bridge PFC
High voltage
CoolGaN™

AC
LINE

CoolMOS™

SynchronousrectifierResonant LLC
High voltage
CoolGaN™

High voltage
CoolGaN™

High voltage
CoolGaN™

High voltage
CoolGaN™

OptiMOS™

OptiMOS™

OptiMOS™

OptiMOS™

EMI
filterHigh voltage
CoolGaN™

CoolMOS™

EiceDRIVER™
2EDF7275

PFC
controller

GaN EiceDRIVER™
1EDF5673*
EiceDRIVER™
2EDF7275

GaN EiceDRIVER™
1EDS5663H*

LLC
controller*GaN EiceDRIVER™ ICs are single-channel products

www.infineon.com/gan-eicedriver
69

New product highlights

2EDi Dual-channel functional and reinforced-isolated gate driverfamily for MOSFETs with accurate and stable timing NEW
The EiceDRIVER™ 2EDi product family is designed for use in high-performance power-conversion applications. Very strong
4 A/8 A source/sink dual-channel gate drivers increase efficiency in CoolMOS™ and OptiMOS™ MOSFET Half-bridges. The
low propagation delay of 37 ns, combined with highly accurate and stable timing over temperature and production, enables further efficiency gains within and across galvanically isolated power stages or in multi-phase/multi-level topologies.
The availability of functional and reinforced isolated drivers in different packages makes these a perfect fit for both primary-side and (safe) secondary-side control. Gate driver outputs come with a high 5 A reverse-current capability and 150 V/ns
CMTI robustness for high dV/dt power loops. For slower switching or driving smaller MOSFETs, 1 A/2 A peak current productvariants are available as well.

EMI
FilterSync
Rec

Primary
stage

PFC

TCOM supplies

Isolated
DC-DC

TCOM PDU

Non-isolated
DC-DC Brick

2EDF7175F 1 A/2 A
2EDF7275F 4 A/8 A

2EDS8165H 1 A/2 A
2EDS8265H 4 A/8 A

2EDF7235K 4 A/8 A w. DTC
2EDF7275K 4 A/8 A

Functional isolation

Reinforced isolation

Functional isolation

CPU (VRM)
POL power

Device overview
VDDI
SLDON
SLDOP

UVLO
SLDO

UVLO
TX

INA
Control
logic

INB
DISABLEENABLENC
DTC

Dead time
controlRX
Input- to-output
isolation

Product features››Easy-to-use small form factor driver +isolation in one package››Stable and high-resolution PWM timing accuracy
within and across power stages for optimizing
full and light-load efficiency››Galvanic isolation with 150 V/ns CMTI robustness for noisy
high-voltage MOSFET power-switching environment››Competitive overall system-component cost with improved protection››Faster time to market with planned UL 1577, VDE 0884-1x,
IEC 60950/62386 reinforced safety certifications

TX

Logic

OUTA

Channel-to-channel
isolation

UVLO
RX

VDDA

Logic

GNDA
VDDB
OUTB

GNDI

GNDB

Potential applications››Telecom DC-DC››Servers››Industrial SMPS››UPS››Batteries››EV-Charging››DC-DC››Smart grid

Product portfolio
Part number

Orderable partnumber (OPN)2EDF7175F

2EDF7175FXUMA1

2EDF7275F

2EDF7275FXUMA1

2EDS8165H

2EDS8165HXUMA1

2EDS8265H

2EDS8265HXUMA1

2EDF7235K

2EDF7235KXUMA1

2EDF7275K

2EDF7275KXUMA1*Certification coming soon

www.infineon.com/2EDi
70

Package

PWM
Input type

LGA13
5.0 x 5.0 mm

Gate
driverUVLO

Input to output isolation
Isolation
class

RatingSurge testing

Safetycertification*

Functional

VIO = 1.5 kVDC

n.a.

n.a.

8V

Reinforced*

VIOTM = 8 kVpeak(VDE0884-10) VIOSM = 10 kVpeak(IEC60065)
VISO = 5.7 kVrms(UL1577)

4V

Functional

VIO = 1.5 kVDC

Deadtime
control

1 A/2 A

NB-DSO16
10 x 6 mm

WB-DSO16
10.3 x 10.3 mm

Driversource/sink
current

4V
4 A/8 A

Dual-mode(IN_A, IN_B)

1 A/2 A

VDE0884-10
UL1577
IEC60950
IEC62368
CQC

4 A/8 A

no

yes
n.a.

n.a.
no

New product highlights

1EDI2004AS* - EiceDRIVER™ SIL 1200 V galvanically isolated automotive gate driver IC
1EDI2004AS is a high-voltage IGBT gate driver designed for automotive motor drives above 5 kW.
It is based on Infineon’s coreless transformer (CT) technology, providing galvanic isolation between
low-voltage and high-voltage domains. The device has been designed to support 400 V, 600 V and1200 V IGBTs. 1EDI2004AS can be connected on the low-voltage side (primary side) to 5 V logic.
A standard SPI interface allows the logic to configure and to control the advanced functions
implemented in the driver. On the high-voltage side (secondary side), it is dimensioned to drive
an external booster stage, or directly, small IGBTs. Short propagation delays and controlled internal
tolerances lead to minimal distortion of the PWM signal. The 1EDI2004AS can be used optimallywith 1EBN100XAE ‘EiceDRIVER™ Boost’ booster stage family.

Product features››Low-propagation delay and minimal PWM distortion››Support of 5 V logic levels (primary side)››16-bit standard SPI interface (up to 2 MBaud) withdaisy-chain support (primary side)››Fully programmable active clamping inhibit signal(secondary side)››Operation with unipolar secondary supply possible››Automotive-qualified (as per AEC Q100)

Simplified application diagram
IREF1

WDG

WDG

IREF2

OSC2

Vcc1
GND1

GND2

P-Supply

Vee2
P-Supply

INP
EN
INSTP

VREG
Start-Stop
Osc

NCS

SDO
SCLK

SPI
interfacePrimary
logic

Secondary
logic

OSD
TON
Outputstage
Switching
control

GATE
TOFF
DACLP
AMCLP

NFLTA
NFLTB
NRST/RDY

Vcc2
NUV2

PWM
input
stage

REF0

SDI

Safety features››Desaturation monitoring››Overcurrent protection››Fully programmable two-level turn-off››Support for active short-circuit (ASC) strategies››Compliant to ISO 26262 standard - ASIL A (suitable
for systems up to ASIL D requirements)

OSC1

OCP
OCP

DESAT

OCPG
DESAT
DEBUG

Potential applications››Main inverters for automotive (hybrid) electric vehicles››High-voltage DC-DC converter››Industrial drive*Coming soon71New product highlights

AUIR2x14SS* – 1200 V Half-bridge automotive gate driver IC
The AUIR2x14SS gate driver family is suited to drive a single half bridge in automotive power-switching applications. These drivers provide high gate-driving capability (2 A source,
3 A sink) and require low quiescent current, which allows for the use of bootstrap power
supply techniques in medium power systems. These drivers feature full short-circuit protection
by means of power-transistor desaturation detection, and manage all Half-bridge faults bysmoothly turning off the desaturated transistor via the dedicated soft shutdown pin, therefore
preventing over-voltages and reducing electromagnetic emissions.
Product features››First Q100-qualified single-die 1200 V device››Floating channel up to 700 V (AUIR2114SS) or1 1200V(AUIR2214SS)
2››Soft overcurrent shutdown3››Synchronization signal to synchronize shutdown with the4other phases››Integrated desaturation detection circuit 5››Two-stage turn-on output for di/dt control 6››Separate pull-up/pull-down output drive pins
7››Matched delay outputs››Undervoltage lockout with hysteresis band

Potential applications››Automotive auxiliaries››Fans››(Heat) Pumps››HVAC compressors››Brushless automotive applications*Coming soon

72

Simplified application diagram
VB

14

DSH

13

HOP
HON
SSDH

12
11
10

AUIR2114SS

To/From
otherdrivers
To/From
otherdrivers

9

VCC

VS

SY_FLTDSL

FAULT/SD
LIN
HIN
VSS

LOP
LON
SSDL
COM

8

73

Gate driver IC support

Infineon gate driver evaluation boards
Board Picture

Application

Product

Product description

Target Application

Topology

6EDL04N02PR

Battery powered drives;
Stepper motor; e-bikes,
e-scooters, e-toys; Drones;
Robotic vacuums

B6 bridge

Battery
powered
EVAL-6EDL04N02PR
applications

Evaluation board for 3-Phase gate driver
IC with LS-SOI technology to control
MOSFET

Stepper
Motor

Stepper motor evaluation board for 200
V half-bridge/high side and low side level IRS2005S
shift gate driver IRS2005S/IRS2007S/IPP180N10N3 G
IRS2008S

Electric
vehiclesEVAL-PS-IRS200X
1EDI2002AS EVALKIT(1EDI2002ASEVALKITTOBO1)
1EDI2004AS EVALKIT(1EDI2004ASEVALKITTOBO1)

EiceDRIVER™SIL Evaluation Kit

1EDI2002AS
1EBN1001AE
1EDI2004AS
1EBN1001AE

Stepper Motor; Power
Tools; Drones; E-Bikes &LEV; Wireless Charging;
Motor Control & Drives
Inverters for E-Vehicles;
High-voltage
DC-DC converter for
E-Vehicles;
Industrial drive
Inverters for E-Vehicles;
High-voltage DC-DC
converter for E-Vehicles;
Industrial drive

Four Phase

Half-bridge

Electric
vehicles

EiceDRIVER™ Sense IGBT gate driver
1EDI2010AS EVALKIT
evaluation kit for traction inverter(1EDI2010ASEVALKITTOBO1)
applications

1EDI2010AS
1EBN1001AE

Electric
vehicles

AUIRS1170S EVALKIT
Secondary side high speed synchronous(AUIRS1170SEVALKITTOBO1) rectification Evaluation Kit

AUIRS1170S

High-voltage DC-DC converter for E-Vehicles; On-Board Full-bridge
Charger; Industrial drive

2ED020I12FA

Inverters for E-Vehicles;
High-voltage DC-DC
converter for E-Vehicles;
Industrial drive;
On-Board Charger

Half-bridge

Electric
vehicles

2ED020I12FAEVALKITTOBO1

Dual channel isolated IGBT Driver, For
600V/1200V IGBTs

Electric
vehiclesEVAL-6ED100HPDRIVE-AS(EVAL6ED100HPDRIVEASTOBO1)

Gate driver evaluation board for
FSxxxR08A6P2xx with EiceDriver Sense/
Lite/Boost, Standalone

1EDI2010AS

Inverters for E-Vehicles;
High-voltage DC-DC
converter for E-Vehicles;
Industrial drive

EV Charging

EVAL-1EDC20H12AH-SIC

Demonstrate the functionality and key
features of 1EDC20H12AH and CoolSiC™
MOSFET

1EDC20H12AH
IMZ120R045M1

Drives, EV Charging, Telecom, SolarHome
appliance

EVAL-1ED44176N01F

Show the functionalities and key featuresof Infineon’s low-side gate driver with
1ED44176N01F
integrated overcurrent protection,
IRLML2803TRPBF
1ED44176N01F.

Home Appliances, PFC;
digital power supplies; Resi- Single
dential and commercial
low-side
air conditioners; Industrial

Homeappliance

EVAL-M3-TS6-665PN

Three-phase inverter power stage withhalf-bridge driver, single low-side driverand IGBT H5

IRS2890DS
IKB20N65EH5
IRS44273L

Home Appliance; Fridge;
Inverter; Fans; GPI; HVAC

3-PhaseInverter +PFC

EVAL_100W_DRIVE_CFD2

Motor drive board offers a sensorlesssynchronous rectification BLDC/PMSM
control algorithm to reduce reverse-current hard-commutation stress

IPD65R1K4CFD
2EDL05N06PF

Air conditioner fan; Water
pump; Refrigerator compressors; Dish washers;
Heating systems; Draining
and recirculation pumps

3-PhaseMotor

Homeappliance

EVAL-2EDL05I06PF

Evaluation Board for 600 V half bridge
gate driver IC with LS-SOI technology tocontrol IGBTs.

Home
appliance

EVAL-2EDL23I06PJ

Home
appliance

EVAL-2EDL23N06PJ

Home
appliance

EVAL-6EDL04I06PT

Evaluation Board for 3-Phase gate driver
IC with LS-SOI technology to control
power devices like 600 V IGBTs

Home
appliance

WM_MOTOR_CONTROL_01

Industrial

2ED100E12-F2

Homeappliance

2EDL05I06PF

Evaluation Board for 600 V HB gate driver
2EDL23I06PJ
IC with LS-SOI technology to control
IKP20N60H3
Highspeed3-IGBT
Evaluation Board for 600 V half bridge
gate driver IC with LS-SOI technology to 2EDL23N06PJ
control MOSFET

Full-bridge

Half-bridge

Consumer; Induction
heating; Industrial; Motor
control & drives, CAV
Half-bridge
E-Bikes, E-Scooter, E-Forklift& Small E-Vehicles
Air conditioners; Drives;
Fans; Power
Half-bridge
management; Pumps,
Consumer, LEV, PowerManagement
Half-bridge
Server; Solar Inverter
Fan; Refrigerator; WashingmachineB6 bridge

Demonstrate sensorless FOC for washing IKD10N60R
machine PMSM motor control
6EDL04I06NT

Motor control & drives

3-Phasemotor

Evaluation Driver Board for EconoDUAL™3 Modules using a coreless transformer single-channel driver

Industrial; CAV; Induction
motor control & drives;
Solar/Wind energy systems

Half-bridge

Please contact your local sales or distribution partner for evaluation boards

74

Highlighted
products

6EDL04I06PT

1ED020I12-F2

Gate driver IC support

Infineon gate driver evaluation boards
Board picture

Application

Product

Product Description

Highlighted
products

Target application

Topology

Industrial

2ED250E12-F

Evaluation Driver Board for PrimePACK™ Modules up to 1200 V using asingle-channel isolated driver

1ED020I12-F2

Industrial; CAV; Motor control &drivesSolar/Wind energy systems

Half-bridge

Industrial

2ED300E17-SFO

This evaluation board for the IGBT
driver board can be used for all medium and high power IGBT modules
up to 1700 V.

2ED300C17-S / -ST

CAV; Drives; Power supply
Renewable energy; solar; Wind
traction

Half-bridge

Industrial

6ED100E12-F2

Evaluation Driver board for EconoPACK™+ IGBT modules, using acoreless transformer single-channel
driver

1ED020I12-F2

Industrial; CAV; Motor control &drivesSolar/Wind energy systems

B6 bridge

Industrial

7ED020E12-FI-U1

Evaluation Driver Board for SmartPIM
1 Modules up to 1200 V. Coreless
2ED020I12-FI
transformer HB drivers are used forgate control and protection.

Industrial; Motor control & drives

B6 bridge

Industrial

7ED020E12-FI-W2

Evaluation Driver Board for EasyPIM™
2B PressFIT Modules up to 1200 V.
2ED020I12-FI
Coreless transformer HB drivers areused for gate control and protection.

Industrial; Motor control & drives

B6 bridge

Industrial

EVAL-M1-6ED2230-B1

A complete power evaluation board
including an EasyPIM™ 1200V Easy1B
6ED2230S12T
Three-phase module for motor-drive
application.

Industrial drives; Motor control,
General Purpose Inverters;
Commercial air Conditioning (CAC)

Three-phase

Industrial

EVAL-1ED020I12-B2

Evaluation Board for galvanic
isolated Single channel driver IC with 1ED020I12-B2
CT technology for 600V/1200V IGBTs

Industrial; UPS
Motor control & drives
Power supplies; Smart grid
Solar energy systems

Half-bridge

Industrial

EVAL-1ED020I12-BT

Evaluation Board for galvanic
isolated Single channel driver IC with 1ED020I12-BT
CT technology for 600V/1200V IGBTs

Data Processing; E-mobility; UPS
Industrial; Motor control & drives
Power supplies; Smart grid; solar
energy systems

Half bridge

Industrial

EVAL-1EDS20I12SV

Evaluation of the product features of
1EDS20I12SV (SRC) in combination
1EDS20I12SV
with EconoDUAL™3 modules

DrivesDual channel
high-side
Half-bridge

Industrial

EVAL-2ED020I12-F2

Evaluation Board for galvanic
isolated dual channel driver IC with
CT technology for 600V/1200V IGBTs

2ED020I12-F2
IKP20N60H3

CAV; Motor control & drives
Power supplies; Solar energy
systems

Half-bridge

Industrial

EVAL-1EDI60I12AF

Evaluation Board for galvanic
isolated dual channel driver IC with
CT technology for 600V/1200V IGBTs

1EDI60I12AF
IKW50N65F5

Solar Energy Systems; EV Charging;
Industrial Drives; Welding;
Induction Heating; Server;
Telecommunication

Half-bridge

F3L020E07-F-P

Evaluation Driver board for 650 V
3-level EconoPACK™ 4 modules in
NPC1-topology. Coreless transformer drivers are used for gate control
and protection.

1ED020I12-F2

Industrial; CAV
Motor control & drives
Solar/Wind energy systems

Half-bridge

F3L030E07-F-W2

Evaluation Driver board for 650 V
Easy2B 3-level modules in NPC1-topology. Coreless transformer
drivers are used for gate control andprotection.

1ED020I12-F2

Drives; Renewable energy
Solar; UPS

Half-bridge

F3L2020E07-F-P

Evaluation Driver board for 650 V
3-level EconoPACK™ 4 modules in
NPC2-topology. Coreless transformer drivers are used for gate control
and protection.

1ED020I12-F2

Industrial; Motor control & drives
Solar/Wind energy systems

Half-bridge

F3L2020E12-F-P_EVAL

Evaluation Driver board for 1200 V
EconoPACK™ 4 3-Level Modules in
NPC2-Topology. Coreless transformer drivers are used for gate control
and protection.

1ED020I12-F2

Industrial; CAV
Motor control & drives
Solar/Wind energy systems

Half-bridge

Industrial

Industrial

Industrial

Industrial

Please contact your local sales or distribution partner for evaluation boards

75Gate driver IC support

Infineon gate driver evaluation boards
Board Picture

Application

Product

Product Description

Highlighted products

Target Application

Industrial

IRUCS1

IR25750L D2PAK/DPAK
In-Circuit Evaluation Board

IR25750L

Current sense application

KIT_XMC_DP_EXP_01

The new XMC™ digital
power
explorer kit features synchronous buck converterwith on-board
resistive load banks

BSC0924NDI
IRS2011S

Industrial, server andtelecom
DC/DC power conversion

Buck

KIT_XMCI45_LARIX_PINU_1

Quadrocopter demonstrator kit with 9-axis motion
tracking, pressure sensor
and authentication representation

BSC0925ND
IR2301S

Multicopter

B6 bridge

EVAL_1K6W_PSU_G7_DD

1600 W Titanium server
power supply with 600 V
CoolMOS™ G7 SJ MOSFET in
DDPAK package

IPDD60R150G7
IPDD60R050G7
IDDD08G65C6BSC007N04LS6
1EDI20N12AF
2EDN7524F

ServerPFC
LLC

EVAL_2K5W_CCM_4P_V2

2500 W CCM PFC, 110/230
AC to 400 DC,

1EDI60N12AF
IPZ60R040C7

Server,UPS,PC Power,Telecom

Buck
PFC
Continuous
conduction mode
(CCM)

Telecom / Industrial
SMPS

LLC

Industrial

Multicopter

SMPS

SMPS

SMPS

EVAL_3KW_2LLC_C7_20

3.0kW Dual LLC Evaluation
Board

IPP60R040C7
BSC093N15NS5
2EDN7524R
1EDI60N12AF
2N7002
BSS316N

SMPS

EVAL_3KW_2LLC_CFD7

Full Infineon solution forthe high voltage DC-DC
stage of a 3KW telecom/
industrial SMPS

IPW60R031CFD7
1EDI60N12AF
BSC093N15NS5
2EDN7524R

Telecom / Industrial
SMPS

LLC

SMPS

EVAL_3KW_2LLC_P7_47

Full IFX solution for the HV
DCDC stage of a 3KW Telecom/industrial SMPS

IPW60R037P7
1EDI60N12AF
BSC093N15NS5
2EDN7524

Telecom/Industrial power
supplyLLC

SMPS

EVAL_3KW_DB_PFC_C7

Full IFX solution for a
Bridgeless Dual Boost PFC
for a 3kW Server/Telecom/
Industrial SMPS

IPZ65R045C7
IPW65R045C7
2EDN7524F
1EDI60N12AF

Server/Telecom/IndusPFC
trial power supply

SMPS

EVAL_600W_12V_LLC_C7

600W DCDC/LLC stage,
400V/12V DC, 97.8% peakefficiency

IPP60R180C7
BSC010N04LS
2EDL05N06PF
2EDN7524F

ServerPC PowerHalf-bridge
LLC

SMPS

EVAL_600W_12V_LLC_CFD7

Full Infineon solution forthe high voltage DC-DC
stage of a 600W server andindustrial SMPS

IPP60R170CFD7
2EDL05N06PF
BSC010N04LS
2EDN7524

ServerTelecom

Half-bridge
LLC

EVAL_600W_12V_LLC_P7

Half bridge LLC stage ofa server SMPS with thetarget to meet 80+ Titanium
standard efficiency requirements

IPP60R180P7
2EDL05N06PF
BSC010N04LS
2EDN7524

Server/Industrial power
supplyHalf-bridge
LLC

EVAL_800W_PSU_3P_P7

This 800 W evaluation
board is a cost optimized
form, fit and function test
platform for server applications

IPW60R099P7
IPP60R280P7
BSC014N04LS
1EDI20N12AF
2EDN7524F

Server power supplies

PFC
LLC

EVAL_800W_PSU_4P_C7

This 800 W evaluation
board is intended to bea form, fit and function
testplatform for server
applications

IPZ60R099C7
IPP60R180C7
BSC014N04LS
1EDI20N12AF
2EDN7524F

Server power supplies

PFC
LLC

SMPS

SMPS

SMPS

Please contact your local sales or distribution partner for evaluation boards

76

Topology

Gate driver IC support

Board picture

Application

Product

Product description

Highlighted
products

Target application

Topology

SMPS

EVAL-600W-12V-LLC-A

600W DC-DC/LLC stage 400/12VDC,
97.4% peak efficiency (digital andanalog version available)

2EDL05N06PF
2EDN7524F
BSC010N04LS
IPP60R190P6Power supplies(DC-DC
Resonant Converters)

Half-bridge
LLC

SMPS

EVAL-IGBT-1200V-247

Adaptable double pulse tester for IGBTs
in TO-247 4pin package

IKY75N120CH3
1EDI60I12AH

Server/Telecom power
supplies
Solar energy systems

Half-bridge

SMPS

EVAL-IGBT-650V-TO247-4

Adaptable double pulse tester for IGBTs
in TO-247 4pin package

IKZ50N65EH5
IKZ50N65NH5
IKW50N65H5
1EDI60I12AF

Server/Telecom power
supplies
Solar energy systems

Half-bridgeSMPS

KIT_DRIVER_2EDN7524F

SMPS

KIT_DRIVER_2EDN7524G

SMPS

KIT_DRIVER_2EDN7524R

This evaluation kit provides a test
platform for Infineon‘s dual-channel
non-isolated gate driver IC
EiceDRIVER™ 2EDN7524 in DSO 8pin
package, WSON 8pin package and
TSSOP 8pin package

2EDN7524F
2EDN7524G

Dual low-side
Industrial power supply/Server/Telecom

2EDN7524R

Dual low-side
Dual low-side

SMPS

KIT_DRIVER_2EDF7275F

This evaluation kit provides a test
platform for Infineon‘s dual-channel
functional isolated gate driver IC
EiceDRIVER™ 2EDF7275F in DSO 16pin
150 mil package

2EDF7275F

Industrial power supply/Server/Telecom

Dual low-side

SMPS

KIT_DRIVER_1EDN7550B

This evaluation kit provides a test
platform for Infineon‘s single-channel
1EDN7550B
non-isolated gate driver IC EiceDRIVER™
1EDN7550B in SOT-23 6pin package.

Industrial power supply/Server/Telecom

Dual low-side

SMPS

EVAL_HB_BC_1EDN8550B

This board is intended to evaluate therobustness of the EiceDRIVER™ 1EDN
TDI (1EDN8550B) gate driver, based on
1EDN8550B
an innovative truly differential inputs
BSC026N08NS5(TDI) concept. This allows to regulate DC
and AC shifts between the microcontroller ground and the driver ground.

Industrial power supply/Server/Telecom

Half-bridgebuck
converter

SMPS

EVAL_3K3W_BIDI_PSFB*The EVAL_3K3W_BIDI_PSFB design
consists of a phase shift full bridge withsynchronous rectification (SR) in fullbridge configuration

Industrial power supply/Server/Telecom

Full-bridge

EVAL_1EDF_G1_HB_GAN

This 600V gallium nitride (GaN)
half-bridge evaluation board enables
easy, rapid setup and test of CoolGaN™
IGOT60R070D1
transistors. The generic topology can be
1EDF5673K
configured for boost or buck operation,pulse testing or continuous full-power
operation.

Power Supplies

Boost
Buck
Half Bridge
LLC

SMPS

2EDS8265H

Please contact your local sales or distribution partner for evaluation boards

Gate driver IC forum
Discuss your technical topics directlywith Infineon gate driver experts.
www.infineon.com/gdforum

77Gate driver IC support

Gate driver IC simulation model© suksao / Freepik

SPICE model

Infineon Designer
Gate driver prototypes are available on www.infineon.com/ifxdesigner. Infineon Designer is an online prototyping engine
combining analog and digital simulation functionalities in an Internet application. Requiring a web browser only, it is aperfect match for supporting customers in selecting the right product for a defined application.

78

Gate driver IC support

Gate driver IC brochuresGate	
  driver	  IC	
  brochures	  Power and Sensing

Selection guide 2019

Selection Guide 2018

Automotive application guideWe make cars clean, safe and smart.

Every switch needs a driver

www.infineon.com/gatedriver
www.infineon.com/gdbrochure

EN

Gate Driver Selection Guide(This document)
www.infineon.com/gdbrochurewww.infineon.com/automotive

www.infineon.com/powerandsensing-selectionguidePower and Sensing
Selection Guide
http://www.infineon.com/
powerandsensing-selectionguide

Automotive application guideGate	
  driver	  IC	
  brochures	  Power	
  and	
  Sensing	  Selec8on	
  Guide	  hDp://www.inﬁneon.com/
powerandsensing-­‐selec8onguide	  	
  Guide	  dbrochure	
  	
  

x	
  
8on	
  

Gate	
  driver	  IC	
  brochures	
  Infineon EiceDRIVER™ gate driver ICs

Automo8ve	
  applica8on	
  guide	  hDps://www.inﬁneon.com/dgdl/Inﬁneon-­‐Automo8ve-­‐Applica8on-­‐Guide-­‐2016-­‐ABR-­‐v02_00-­‐
EN.pdf?
Power	
  and	
  Sensing	  Selec8on	
  Guide	  Automo8ve	
  applica8on	
  guide	
  ﬁleId=5546d462584d1d4a015891808e617573	
  	
  

Gate	
  Driver	
  Selec8on	
  Guide	
  www.inﬁneon.com/gdbrochure	  	  hDp://www.inﬁneon.com/
powerandsensing-­‐selec8onguide	  	
  hDps://www.inﬁneon.com/dgdl/Inﬁneon-­‐Automo8ve-­‐Applica8on-­‐Guide-­‐2016-­‐ABR-­‐v02_00-­‐
EN.pdf?
ﬁleId=5546d462584d1d4a015891808e617573	
  	
  Industrial galvanic isolated gate driver ICs

每一个功率器件都需要一个驱动芯片

Every switch needs a driver门极驱动应用选型指南

Gate driver application matrix

Power	
  and	
  Sensing	  Selec8on	
  Guide	  hDp://www.inﬁneon.com/
powerandsensing-­‐selec8onguide	
  	
  

Gate	
  Driver	
  Selec8on	
  Guide	
  www.inﬁneon.com/gdbrochure	  	
  Gate Driver Application Matrix
www.infineon.com/gdapplication

工业级隔离型门极驱动芯片
选型指南2018

Selection guide 2018www.infineon.com/gatedriver-cn

www.infineon.com/gatedriver门极驱动应用选型指南

Automo8ve	
  applica8on	
  guide	  hDps://www.inﬁneon.com/dgdl/Inﬁneon-­‐Automo8ve-­‐Applica8on-­‐Guide-­‐2016-­‐ABR-­‐v02_00-­‐
EN.pdf?
ﬁleId=5546d462584d1d4a015891808e617573	
  	
  Industrial Galvanically Isolated

www.infineon.com/gatedriver-cn
www.infineon.com/1EDcompact-cn

www.infineon.com/gatedriver
www.infineon.com/1EDcompact

www.infineon.com/gdapplication-cn

工业级隔离型门极驱动芯片

Gate Driver
www.infineon.com/gdiso

www.infineon.com/gdiso-cn

Industrial	
  Galvanically	
  Isolated	
  Gate	  Driver	
  	
  工业级隔离型门极驱动芯片	  门极驱动应用选型指南	  	
  www.inﬁneon.com/gdiso-­‐cn	
  www.inﬁneon.com/gdapplica8on-­‐cn	  	
  www.inﬁneon.com/gdiso	  	  EiceDRIVER™	
  1ED Compact gate driver IC family
Industrial	
  Galvanically	
  Isolated	
  Gate	  Driver	
  	
  工业级隔离型门极驱动芯片	  Gate	
  Driver	
  Applica8on	
  Matrix	
  门极驱动应用选型指南	  	  Home Appliances
Mobility & Battery Driven	
  www.inﬁneon.com/gdiso-­‐cn	  	
  www.inﬁneon.com/gdapplica8on	
  www.inﬁneon.com/gdapplica8on-­‐cn	  	
  www.inﬁneon.com/gdiso	
  
	
  
	
  
EiceDRIVER™ 1ED Compact

EiceDRIVER™ Enhanced

EiceDRIVER™ Enhanced gate driver IC family

1200 V galvanically isolated compact gate driver ICs

Discover the next level of power and efficiency

	
  
	
  

	
  
	
  

Infineon’s gate driver ICs utilize level-shift silicon-on-insulator technology (SOI), and level-shift junction isolation
technology (JI) to meet the high performance requirements in home appliance applications.

Charger

PFC

General

Air Conditioner(Residential)

IRS4427S
IRS44273L
2EDN8524F
2EDN8524F
ICE5QR4770AZ
IRS4427S(CoolSET™)
IRS2153(1)DCommercial
Lighting

Electric Tools(Battery)

Hood Fan/
Ceiling Fan/Freezer FanPower Tools(AC)

IRS44273L
2EDN8524F
1EDN8511B

Gate	
  Driver	
  Applica8on	
  Matrix	  Industrial
www.inﬁneon.com/gdapplica8on	
  
	
  
	
  
SMPS

DC-DC

Inverter(<1 kW)
Inverter(<3 kW)

1EDI20N12AF

6EDL04I06PT
IR2136S
IRS2890DS
2ED2304S06F

Half-bridge
Topology

Charger

6EDL04I06PT

6EDL04I06PT

2ED2304S06F

2EDL05I06PF

2ED2304S06F

2EDL05N06PF
IRS2153(1)DHS-Buck

IRS2117
Industrial
IRS25752L
IRS20752L

Sync-Buck

Compressor/
2EDL05N06PF
Fan/CAC
2ED2304S06F
Inverter(<5 kW)
Inverter(<30 kW)Air Conditioner(Commercial)

Automatic Door
Opening Systems

Building Fans &Pumps

1ED020I12-F2
1EDI10I12MF
2ED020I12-F2

Mobility &Battery Driven

6EDL04(I,N)06PT
2EDL23I06PJ
IR2214SS
1EDI30I12MF
1EDI60I12AF
1EDU20I12SV

Inverter(<200 kW)PFC

2EDL05I06PF
IRS2181(4)IRS2890DS

DC-DC

Automatic
opening system

Commercial
Sewing Machine

PFC

Drives

6EDL04I06PT
IR2136S
IRS2334

Forklift Truck/
CAV

6EDL04I06PT
IR2133
2EDL23I06PJ
1EDI40I12AF
1ED020I12-BT
2ED020I12-FI

1EDI60N12AF
2EDL23I06PJ
IRS2127(1)1EDI60I12AF
1ED020I12-B2
1EDU20I12SV

1EDU20I12SV
1ED020I12-B2
1EDI60I12AF

IRS4427S
IRS44273L
2EDN8524F

DC-DC(1 kW - 100 kW)
SMPS

2EDN8524F
IR7106S
IRS2186(4)Brake Chopper

1EDI05I12AF
1EDI10I12MF
IRS44273L

Active Bridge
RectifierInverterUPS

HB (LLC)

Sync-Buck
BLDC

6EDL04I06PT
IR2136S
IRS2103

1EDI40I12AF

1EDI20I12AF

1EDI05I12AF

1EDI60N12AF

1EDI20N12AF

1EDI30I12MF

1EDI20I12MF

1EDI10I12MF

1EDI60I12AH

1EDI40I12AH

1EDI20I12AH

1EDI05I12AH

1EDI60H12AH

1EDI20H12AH

1EDI30I12MH

1EDI20I12MH

1EDI10I12MH

1EDC Compact
300 mil (UL 1577)

1EDC60I12AH

1EDC40I12AH

1EDC20I12AH

1EDC05I12AH

1EDC60H12AH

1EDC20H12AH

1EDC30I12MH

1EDC20I12MH

1EDC10I12MH

1EDI60I12AF
2EDL23I06PJ
IR7106S

Drones/ E-Bike/
E-Scooter

6EDL04N02PR
IRS2334
IRS2007S

EV Charger/

General Traction

Battery Charger
Powering
an energy-smart world
IRS2186S

1EDI60I12AF
IR2214SS

IRS4427S
IRS44273L
2EDN8524F
2EDL05N06PJ
2EDL23N06PJ
1EDI20N12AF
1EDI60N12AF
IRS4427S
IRS44273L
2EDN7524F

Typical Output
Current [A]

6EDL04N02PR

Output Configuration

1EDI40I12AF
IR2214SS
IRS4427Sprovides a comprehensive portfolio of high-performance gate driver ICs for photovoltaic inverters. By combining
Infineon
IRS44273L
EiceDRIVER™
with super-junction MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiC™,
2EDN7524F
1EDI60I12AF
as wellas IGBT and SiC modules, Infineon enables solutions that maximizing uptime and energy production.
1EDU20I12SV
IR2010S
6EDL04N02PR
IR2136S
Recommended Gate Drivers
IRS2007S

Renewable Energy

Inverter (>2 kW)µInverter BoostµInverter DC-AC
String Boost
String Inverter
Central Boost/SMPS

2ED020I12-F2
1ED020I12-F2
1ED020I12-FT

Lawn Mower/ Vacuum/
Service Robotics

2EDL05N06PF
Improving efficiency is thenumber one objectivein the field of photovoltaics. Efficiency gains of as little as one percent
IR2213
IRS2183
can1EDI20I12AF
still yield enormous returns in renewable energy segment.

Inverter (<2 kW)
1EDI60I12AF
1ED020I12-F2
1EDU20I12SV

Light Electric
Vehicle (LEV)

6EDL04N02PR
IR2136S

Central Inverter

Heat Pump

2ED020I12-F2› Available in wide body package with 8 mm creepage distance› Suitable for operation at high ambient temperature› Active Miller clamp› Short circuit clamping and active shutdown› ≥ 100 kV/µs CMTI
› Precision DESAT protection

1ED020I12-FT

1ED020I12-B2

1ED020I12-BT

2ED020I12-FI

Configuration

SingleDual

SingleSingleSinglePackage (all 300 mil)DSO-16

DSO-36

DSO-16

DSO-16

DSO-16

Galvanic Isolation

Functional

Functional

Functional

Basic(VDE 0884-10)

Basic(VDE 0884-10)

Functional
on High SideUVLO, OPAMP,
Comparator

Half Bridge
DSO-18

Typical Propagation
Delay [ns]UVLO

10 / -9.4

7.5 / -6.8

4 / -3.5

1.3 / -0.9

10 / -9.4

4 / -3.5

300

300

300

Input [V]2.85 / 2.75

2.85 / 2.75

2.85 / 2.75

2.85 / 2.75

Output [V]12 / 11.1

12 / 11.1

12 / 11.1

12 / 11.1

125

DESAT, UVLODESAT, UVLODESAT, UVLO, TwoLevel Turn Off

UVLO

Input [V]4.1 / 3.8

4.1 / 3.8

4.1 / 3.8

4.1 / 3.8

4.1 / 3.8

12 / 11Output [V]12 / 1112 / 1112 / 1112 / 1112 / 1112 / 11

500

500

500

500

500

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

✓

DESAT Charge Current [µA]
Bipolar Output Supply
Active Miller Clamp
Inverting and Non-inverting Inputs
Combinable Enable/Shutdown
and Fault Feedback Signals-

5.9 / -6.2

4.4 / -4.1

2.2 / -2.3

Active Miller
Clamp

Active Miller
Clamp

Active Miller
Clamp

125

300

300

300

2.85 / 2.75

2.85 / 2.75

2.85 / 2.75

TLSET

-

-

✓

-

✓

-

11.9 / 11

11.9 / 11

11.9 / 11

Typical Propagation Delay [ns]

170

170

170 + TLTOff

170

170 + TLTOff

85

Separate Sink/ Separate Sink/ Separate Sink/ Separate Sink/ Separate Sink/ Separate Sink/
Source Outputs Source Outputs Source Outputs Source Outputs Source Outputs Source Outputs
300

DESAT, UVLODESAT, UVLO,
Two-Level Turn Off

Protection Function

Package

Recommended Gate Drivers

6EDL04I06PT

IRS2301S

2ED2304S06F
Recommended
Gate Drivers

1EDI60I12AF

1EDI Compact 300 mil

Industrial	
  Galvanically	
  Isolated	
  Gate	  Driver	
  	
  工业级隔离型门极驱动芯片	  门极驱动应用选型指南	
  Renewable Energy	
  www.inﬁneon.com/gdiso-­‐cn	  	
  www.inﬁneon.com/gdapplica8on-­‐cn	  	
  www.inﬁneon.com/gdiso	
  
	
  
	
  
	
  

6EDL04N02PR

IR2235
Infineon’s gate driver ICs are the expert’s choice.
With the breadth and depth of the portfolio, customers can quickly
2EDL23I06PJ
IR2214SS
design and build efficient and robust systems
for every industrial application.

SR Motor
Inverter

1EDI Compact 150 mil

1ED020I12-F2

Product Features

Package

IRS4427S
IRS44273L
2EDN8524F

IR2136S for theIR2136S
IRS2890DS
Reliable, highIRS2007S
quality solutions
most rugged situations

1200 V galvanically isolated enhanced gate driver ICs

The EiceDRIVER™ 1ED Enhanced gate driver ICs are galvanic isolated single
channel IGBT and SiC MOSFET drivers in DSO-16 package that provide
output current capabilities of typically 2 A. The precision DESAT function isan excellent solution for SiC MOSFET short-circuit protection. All logic pinsare 5 V CMOS compatible.
2ED020I12-F2 is the dual-channel version of 1ED020I12-F2 in DSO-36
package. 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT
driver with interlocking high and low side referenced outputs.
EiceDRIVER™ Enhanced

For battery-driven applications, saving battery power is the key. Infineon offers an excellent selection of gate
driver ICs providing the highest-possible energy efficiency and top precision.

VacuumCleaner

Refrigerator/
Washer/Dryer

Product Features› Available in DSO-8 300 mil wide body package with 8 mm creepage
distance and DSO-8 150 mil› Up to 10 A typical peak rail-to-rail output› Suitable for operation at high ambient temperature› Separate source and sink outputs or active Miller clamp› Short circuit clamping and active shutdown› ≥ 100 kV/µs CMTIFrom EV charger and light electric vehicle (LEV) to service robotics and drones, Infineon’s family of configurable
half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide therequired power and efficiency. Automotive-specific gate drivers qualified according to AEC-Q100 are also available.

Recommended Gate Drivers
Home
Appliances

Infineon’s new EiceDRIVER™ 1EDC Compact 300 mil family is recognizedunder UL 1577 with an insulation test voltage of VISO = 2500 V(rms) for 1 min.
The functional isolated EiceDRIVER™ 1EDI Compact 150 mil and 300 mil
families are also available.
The EiceDRIVER™ 1ED Compact family is the perfect driver for super-junction
MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC) MOSFET such as
CoolSiC™, and IGBT modules.

Full range of best-in-class components

2.85 / 2.75

2.85 / 2.75

12 / 11.1 (H)

12 / 11.1 (H)

9.1 / 8.5 (N)9.1 / 8.5 (N)-Isolation Definitions
Functional Isolation

Isolation between conductive parts which is necessary only for the proper functioning of the equipment.

Basic Isolation (VDE 0884-10)

Isolation applied to live parts to provide basic protection against electric shock.

Solar Inverter

6EDL04I06PT
IR2136S
2ED2304S06F
IR2214SS
IR2213
IR2235
1EDI20I12AF

Coreless Transformer (CT) Technology
IRS4427S
2EDN7524F
IRS44273L
2ED2304S06F
IR2114SS
2EDL05N06PJ
2EDN8524F
IRS4427S
1EDI20N12AF
1ED020I12-F2
IR7106S
1EDI60N12AF
2EDN8524F
1EDI60I12AF
1EDI60I12AF
1ED020I12-F2
IR2214SS

1EDN/2EDN	  Sample	
  Kit	
  Galvanically isolated EiceDRIVER™ ICs based on ourcoreless transformer (CT) technology which uses
semiconductor manufacturing processes to integrate an
on-chip transformer consisting of metal spirals and siliconoxide insulation. The on-chip transformers are used fortransmitting switching information between input chipand output chip which are galvanically isolated.

Gate Driver Support Tools› Infineon Gate Drivers Home Page
› Simulation Tools› Gate Driver X-Reference› Gate Driver Selection Guide Brochure› Gate Driver Finder Toolwww.infineon.com/gatedriver
www.infineon.com/1EDcompact

Driving SiC MOSFETs– www.infineon.com/gatedriver or– www.infineon.com/eicedriver– www.infineon.com/ifxdesigner– www.infineon.com/crs– www.infineon.com/gdbrochure– www.infineon.com/gdfinder

Every isolated EiceDRIVER™ IC is well-suited to drive SiC MOSFETs
such as the ultra-fast switching 1200-V CoolSiC™ power MOSFETs.
The drivers incorporate most important key features and parameters
for SiC driving such as tight propagation delay matching, precise
input filters, wide output-side supply range, negative gate voltage
capability or Miller clamping, and extended CMTI capability.
www.infineon.com/SiC-gd
www.infineon.com/SiC-MOS

55	
  

55	
  

ISAR	
  ordering	  code:	
  KIT_1EDN_2EDN_SA_V1	
  	
  1EDN/2EDN	  Sample	
  Kit	  ISAR	
  ordering	  code:	
  KIT_1EDN_2EDN_SA_V1	
  	
  1EDN-2EDN EiceDRIVER™ MOSFET
gate driver ICs-Application
Selection Guide

Sample	  Kit	
  1EDN/2EDN Sample Kit 1EDN/2EDN	
  ISAR	
  ordering	  code:	
  KIT_1EDN_2EDN_SA_V1	
  	
  ISAR ordering code:
KIT_1EDN_2EDN_SA_V1

55	
  

79

Gate driver ICs support

Gate driver selection tool
To simplify the gate driver selection process, Infineon offers an online easy-to-use gate driver selection tool.
By selecting a few key parameters, the tool quickly guides you in finding the right driver for your application.
Visit the gate driver selection tool by going to www.infineon.com/gdfinder

www.infineon.com/gdfinder

Cross Reference Search
Important Notice
All information presented in IFX cross reference search tool is based on IFX best estimate of other manufacturers’ published information at the time this information was collected by IFX. This information is for suggestion purposes only andshall in no event be regarded as a guarantee of conditions or characteristics. Customers who are interested in such crossreference will be encouraged to communicate with IFX local representatives in order to clarify their details of the needs andrequests. IFX is not responsible for any incorrect or incomplete information.
Enter partial or full manufacturer’s device number and manufacturer

www.infineon.com/crs
80

Gate driver ICs support

My Infineon sharing platform

Website Tools››Infineon gate drivers home page / 中文版››Gate driver finder tool (Web)››Gate driver X-reference (Web)››Simulation tools (Web)››Evaluation boards (Web)››Introduction to gate drivers (Video)››1EDN EiceDRIVER™ Gate Driver ICs (Video)››2EDL EiceDRIVER™ Gate Driver ICs (Video)

Product promotion page››200 V Level-Shift Gate Driver ICs››500 - 700 V Level-Shift Gate Driver ICs››1200 V Level-Shift Gate Driver ICs››SiC MOSFET Gate Driver ICs /中文版››1EDI/1EDC EiceDRIVER™ Compact /中文版››The Slew-Rate Control EiceDRIVER™ /中文版››1EDN EiceDRIVER™ Gate Driver IC home page››2EDN EiceDRIVER™ Gate Driver IC home page››µHVIC™ Family››www.infineon.com/gatedriver / www.infineon.com/gatedriver-cn››www.infineon.com/gdfinder››www.infineon.com/crs››www.infineon.com/ifxdesigner››www.infineon.com/gdevalboards››www.infineon.com/gdvideointro››www.infineon.com/gdvideo1EDN››www.infineon.com/gdvideo2EDL››www.infineon.com/200vhvic››www.infineon.com/700vhvic››www.infineon.com/1200vhvic››www.infineon.com/gdsic / www.infineon.com/gdsic-cn›› www.infineon.com/1edcompact / www.infineon.com/1edcompact-cn››www.infineon.com/src / www.infineon.com/src-cn››www.infineon.com/1EDN››www.infineon.com/2EDN››www.infineon.com/microhvic
81Gate driver IC support

Infineon gate drivernaming convention
Naming convention for existing families of gate driver ICs

AU

IR

21

10

D

S
Package type
S = SOICJ = PLCC44
M = MLPQ
Q = MFQP
L = SOT-23
B/F = die part
Blank: PDIP

Automotive rating
Technology generation
IR = Gen2 high-voltage driver IC
IRS = Gen5 high-voltage driver IC
Voltage class
20 = 200 V
21 = 600 V
22 = 1200 V
23 = 600 V
26 = 600 V feature adder
44 = low-side driver

Additional features
D = bootstrap
Blank = without bootstrap

Driver type
3 = 3-phase driver
7 = current-sense IC
Other: half-bridge, high-side/low-side, etc.

1ED

I

Number of channels
1 = 1-ch EiceDRIVER™
2 = 2-ch (half-bridge) EiceDRIVER™
6 = 6-ch (3-phase) EiceDRIVER™
Isolation technology
S = reinforced galvanic isolation
B = basic galvanic isolation
I = functional galvanic isolation
C = UL certified functional galvanic isolation
L = level-shifting (SOI)
N = non-isolated driver
Minimum drive strength
in hundreds of milliamps
Optimal switch TypeH = high-speed IGBTI = IGBTJ= JFETN = MOSFET
82

60

I

12

A

F
Package type, e.g.
F = DSO8-150 mil
H = DSO8-300 mil
Key features, e.g.
A = separate sink/source
B = Bootstrap diodeD = DESAT
M = active Miller clamp
S = Slew rate control
T = two-level turn-off
Voltage class
06 = 600 V
12 = 1200 V

Gate driver IC support

Infineon gate drivernaming convention
Naming convention for existing and upcoming families of gate driver ICs

2

ED

2304

S[x]

06

Package type, e.g.
F = DSO8-150 mil
H = DSO8-300 mil
C = Bare die single chipJ = SO14-150 mil
M = SO16-300 mil
P = SO20-300 mil
R = TSSOP28-140 mil
T = SO28-300 mil
V = SO36-300 mil

Number of channels
1 = 1-ch2 = 2-ch(half-bridge, hi/low)
6 = 6-ch (3-phase)
ED = EiceDRIVER™
Product number/voltage
Flexible
Technology indicator
M = Coreless transformer (inductive)
N = Non-isolated driver (low-side drivers)
J = Junction level shifting (non-SOI)[x] Optional
S = Infineon SOI
C = Isolation-certified
S = Reinforced isolation
B = Basic Isolation
U/C = UL 1577-certified

2

ED

N

Number of channels
ED = EiceDRIVERTM
Isolation class
N = non-isolated
F = functional isolation
B = basic isolation
S = reinforced isolation
UVLO threshold
6 = reserved
7 = ~ 4.2V
8 = ~ 8V
9 = reserved{“i” used todesignate any typeof galvanic isolation

7

F

Voltage class, e.g.
01 = <200 V
02 = 200 V
06 = 600 V/650 V
07 = 700 V
12 = 1200 V
16 = 1600 V
17 = 1700 V

52

4

F
Package
F = DSO 150 mil, 1.27 mm
H = DSO 300 mil, 1.27 mm
B = SOT-23
G = VDSON
R = TSSOP (“mini DSO-8”)
K = LGA
Control Inputs
3 = inverted
4 = non-inverted
5 = mixed
6 = differential
Family ID
xx = 2 digits

83

Where to buy
Infineon distribution partners and sales offices:
www.infineon.com/WhereToBuy

Service hotline
Infineon offers its toll-free 0800/4001 service hotline as one central number,available 24/7 in English, Mandarin and German.

››Germany ..................... 0800 951 951 951 (German/English)››China, mainland ........ 4001 200 951 (Mandarin/English)››India ........................... 000 800 4402 951 (English)››USA ............................. 1-866 951 9519 (English/German)››Other countries .......... 00* 800 951 951 951 (English/German)››Direct access .............. +49 89 234-0 (interconnection fee, German/English)* Please note: Some countries may require you to dial a code other than “00” to access this international number.
Please visit www.infineon.com/service for your country!

Mobile product catalog
Mobile app for iOS and Android.

www.infineon.com
Published byInfineon Technologies Austria AG
9500 Villach, Austria© 2019 Infineon Technologies AG.
All rights reserved.

Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BEREGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OFANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OURPRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OURPRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANTPRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATETHE SUITABILITY OF OUR PRODUCTS FOR THE INTENDEDAPPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.

Order number: B167-I0762-V1-7600-AP-EC-P
Date: 08 / 2019

Additional information
For further information on technologies, our products, theapplication of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
office (www.infineon.com).
Warnings
Due to technical requirements, our products may containdangerous substances. For information on the types in question,please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-­
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where afailure of the product or any consequences of the use thereof
can result in personal injury.