CONTENTSPROGRAM TIME TABLE .................................................................................................................................... 1
PREFACE ............................................................................................................................................................. 3
SUPPORTING COMPANIES, FOUNDATIONS AND ORGANIZATIONS ...................................................... 4
COOPERATIVE ORGANIZATIONS .................................................................................................................. 5
COMMITTEE MEMBERS .................................................................................................................................. 6
GENERAL INFORMATION ............................................................................................................................... 9
PLENARY SESSIONS ....................................................................................................................................... 11
TECHNICAL PROGRAMSEPTEMBER 28 (Mon.) .............................................................................................................................. 12
SEPTEMBER 29 (Tue.) ................................................................................................................................ 20
SEPTEMBER 30 (Wed.) ............................................................................................................................... 38
RUMP SESSIONS .............................................................................................................................................. 44
SHORT COURSES ............................................................................................................................................. 45
PRESENTATION GUIDELINES ....................................................................................................................... 46
EXHIBITION ..................................................................................................................................................... 47
AUTHOR INDEX .............................................................................................................................................. 48
ADVERTISEMENT ........................................................................................................................................... 58
FLOOR GUIDE .................................................................................................................................................. 76
SSDM2016 ANNOUNCEMENT ....................................................................................................................... 77-2-

PREFACE
On behalf of the organizing committee, it is my great pleasure and honor to welcome you to Sapporo, Japan, forthe 2015 International Conference on Solid State Devices and Materials (SSDM2015). The purpose of SSDM
is to contribute to the promotion of science and industry related to solid-state electronics. This conference
has been providing a forum for interaction among various fields-ranging from physics and material science tocircuits, systems, and process technologies to discuss the very latest research. Through SSDM, information
has been delivered from Japan and Asia to the rest of the world. In fact, we have witnessed many globally
recognized scientific findings and technical achievements that have led to real innovation.
This year, 784 high-quality abstracts were submitted to SSDM2015 from 22 countries. Great effort by thetechnical program committee in selecting the abstracts has resulted in an excellent technical program consistingof 3 plenary talks, 60 invited papers, 266 contributed oral papers, 258 posters, and 32 late news papers. We
are confident that the papers presented at SSDM2015 address in depth nearly all the key issues in the field andprovide good stimulation and new perspectives to participants.
Historically, from SSDM1999, the program committee has been divided into sub-committees, since the fields
relating to SSDM have been diversified from the conventional semiconductor device technologies to materialscience, process, manufacturing, circuit, and new technologies such as nano, organic, and bio. The number ofsubmitted papers and participants has thus been increasing.
Last year, we were very pleased because Professors Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura won
the Nobel Prize in physics. Their excellent research related to GaN and their optical device applications are oneof the main topics of SSDM.
This year, we have invited three plenary speakers. Dr Ryoji Chubachi from AIST will discuss “Building a
Sustainable Society through Innovative Devices and Materials” with a more general point of view. Professor
Hiroshi Amano from Nagoya University will discuss “Beyond Blue LED”. Finally, Professor Kang L. Wong
will discuss “Low Power Electronics beyond 5 nm”.
We wish to express our sincere appreciation to all the contributors who submitted technical papers and all
the committee members for their great patience in preparing the way for SSDM2015. We also express our
sincere gratitude for the financial support provided by MEXT-JSPS and the other supporting corporations andfoundations.
Your participation at SSDM2015 is greatly appreciated. The utmost consideration has been taken to ensure thatthroughout the entire conference you will enjoy discussions and create fresh ideas.

September 2015

Takashi Fukui
General Chair, Organizing Committee, SSDM2015
Professor, Hokkaido University-3-

SUPPORTING COMPANIES, FOUNDATIONS, AND ORGANIZATIONS
Sponsoring Companies and Foundations:
Toshiba Corporation
Panasonic Corporation
Sony Corporation
Hitachi, Ltd.
Mitsubishi Electric Corporation
FUJITSU LIMITEDROHM Co., Ltd.
NEC Corporation
Semiconductor Energy Laboratory Co., Ltd.
Tokyo Electron Limited
Foundation for Promotion of Material Science and Technology of JapanULVAC, Inc.

as of August 31, 2015

Subsidizing Foundations and Organizations:
Ministry of Education, Culture, Sports, Science and Technology
City of Sapporo
The Murata Science Foundation
Inoue Foundation for Science
Support Center for Advanced Telecommunications Technology Research, Foundation
Nippon Sheet Glass Foundation for Materials Science and Engineering

as of August 31, 2015

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COOPERATIVE ORGANIZATIONSTechnical-Co-Sponsor:
IEEE Electron Devices Society (EDS)

Cooperative Organizations:
IEEE EDS Japan Chapter
IEEE EDS Kansai Chapter
IEEE EDS Taipei Chapter
IEEE Taipei Section Sensors Council
The Institute of Electronics and Information Engineers
The Institute of Electronics, Information and Communication Engineers
The Korean Physical Society Semiconductor Physics Division(in alphabetical order)

as of August 31, 2015

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COMMITTEE MEMBERS
ORGANIZING COMMITTEE
Chair:
Vice-chair:
Members:

T. Fukui (Hokkaido Univ.)
T. Kanayama (AIST)
Y. Arakawa (Univ. of Tokyo)
T. Asano (Kyushu Univ.)
S. Chung (National Chiao Tung Univ.)
S. Fujita (Kyoto Univ.)
M. Fukuma (SIRIJ)
Y. H. Jeong (POSTECH)
T. Hiramoto (Univ. of Tokyo)
D. Hisamoto (Hitachi, Ltd.)
H. Ishiwara (Tokyo Tech)
H. Ito (Tokyo Electron Ltd.)E. K. Kim (Hanyang Univ.)
M. Konagai (Tokyo City Univ.)
M. Koyanagi (Tohoku Univ.)
K. Masu (Tokyo Tech)
K. Matsumoto (Osaka Univ.)
S. Miyazaki (Nagoya Univ.)
N. Nagashima (Sony Corp.)
T. Nakamura (Rohm Co., Ltd.)K. Natori (Tokyo Tech)
H. Oohashi (NTT Electronics Corp.)
T. Oomori (Mitsubishi Electric Corp.)
N. Saito (NHK)H. Shibata (Toshiba Corp.)
T. Shibata (JSAP)
T. Sogawa (NTT Basic Res. Labs.)
T. Someya (Univ. of Tokyo)
S. Tahara (NEC Corp.)
A. Takahashi (Sharp Corp.)
H. Umimoto (Panasonic Corp.)
E. Yano (Fujitsu Labs. Ltd.)N. Yokoyama (AIST)LONG-TERM PLANNING ADVISORYCOMMITTEE
Chair:
Members:

Y. Horiike (Univ. of Tsukuba)

Y. Arakawa (Univ. of Tokyo)
T. Shibata (JSAP)
H. Watanabe (Intellectual Property High Court)
N. Yokoyama (AIST)
S. Zaima (Nagoya Univ.)
K. Masu (Tokyo Tech)

AWARD NOMINATION COMMITTEE
Chair:
Members:

STEERING COMMITTEE
Chair:
Vice-chair:
Secretary:
Members:

S. Hara (Hokkaido Univ.)
M. Masahara (AIST)
S. Kasai (Hokkaido Univ.)
M. Akazawa (Hokkaido Univ.)
H. Y. Cha (Hongik Univ.)
Y. H. Cho (KAIST)
K. Endo (AIST)
N. Fukata (NIMS)
M. Ikebe (Hokkaido Univ.)
Y. Ishikawa (Univ. of Tokyo)
S. Migita (AIST)
T. Nagahama (Hokkaido Univ.)
H. Ota (AIST)
T. Sato (Hokkaido Univ.)
K. Takahashi (JEOL Ltd.)T. Uemura (Hokkaido Univ.)
N. J. Wu (Chinese Academy of Sci.)
Y. C. Yeo (TSMC)
H. W. Zan (National Chiao Tung Univ.)

INTERNATIONAL ADVISORY COMMITTEE
C. Y. Chang (National Chiao Tung Univ.)
G. Declerck (IMEC)
L. Esaki (Yokohama College of Pharmacy)
J. S. Harris (Stanford Univ.)
K. v. Klitzing (Max Planck Inst.)
D. L. Kwong (IME)M. Nakamura (JST)Y. Nishi (Stanford Univ.)
K. H. Ploog (Paul Drude Inst.)
T. Sugano (Univ. of Tokyo)
K. Takahashi (Tokyo Tech)

PROGRAM COMMITTEE

Chair:
S. Fujita (Kyoto Univ.)
Vice-chairs: T. Hiramoto (Univ. of Tokyo)
T. Kita (Kobe Univ.)
S. Sato (Fujitsu Labs. Ltd.)E. Y. Chang (National Chiao Tung Univ.)
Secretary:
T. Kawaharamura (Kochi Univ. of Tech)
T. Sekitani (Osaka Univ.)
K. Miyaji (Shinshu Univ.)
JJAP Special Issues Editors:
K. Kita (Univ. of Tokyo)
S. Iwamoto (Univ. of Tokyo)
S. Higashi (Hiroshima Univ.)

N. Yokoyama (AIST)

Y. Arakawa (Univ. of Tokyo)
K. Masu (Tokyo Tech)
T. Mogami (PETRA)
S. Okazaki (GIGAPHOTON INC.)
T. Oomori (Mitsubishi Electric Corp.)
T. Shibata (JSAP)
H. Watanabe (Intellectual Property High Court)-6-Subcommittee Members: Area Title[1] Advanced LSI Processing & Materials Science
Chair:
S. Migita (AIST)
Vice-chairs: O. Nakatsuka (Nagoya Univ.)
L. Grenouillet (CEA-LETI)
Members:
T. Aoyama (Toshiba Corp.)
K. Kakushima (Tokyo Tech)
H. Morioka (SOCIONEXT)G. Nakamura (Tokyo Electron Ltd.)T. Nakayama (Chiba Univ.)
H. Nohira (Tokyo City Univ.)
T. Yamaguchi (Renesas Electronics Corp.)
S. Yoshida (Sony Corp.)[2] Interconnect Technologies and 3D Integration / Sensor /MEMS Integration / Materials and Characterization
Chair:
H. Ishii (Toyohashi Tech)
Vice-chairs: N. Sugiyama (Toray Research Center, Inc.)
K.-N. Chen (National Chiao Tung Univ.)
Members:
M. Fujino (Univ. of Tokyo)
T. Fukushima (Tohoku Univ.)
J. Gambino (ON Semiconductor)
S. Itabashi (NTT Advanced Technology Corp.)
H. Kanaya (Kyushu Univ.)
M. Kodera (Toshiba Corp.)
T. Minari (NIMS)
S. Ogawa (AIST)S. G. Pyo (Chung-Ang Univ.)
M. Sato (Fujitsu Labs. Ltd.)
M. Takeyama (Kitami Inst. of Tech.)
C. S. Tan (Nanyang Technological Univ.)
M. Ueki (Renesas Electronics Corp.)
M. van der Veen (UPM IMEC)
W. Zhang (NCAP China)[3]CMOS Devices / Device Physics
Chair:
M. Masahara (AIST)
Vice-chairs: N. Sugii (Hitachi, Ltd.)
F.-L. Yang (Academia Sinica)
Members:
T.-S. Chao (National Chiao Tung Univ.)
Y. Fukuzaki (Sony Corp.)
M. Hane (Renesas Electronics Corp.)
M. Kobayashi (Univ. of Tokyo)
K. Kokubun (Toshiba Corp.)
K. Maekawa (Renesas Electronics Corp.)
N. Mori (Osaka Univ.)
N. Planes (STMicroelectronics)
K. Sukegawa (SOCIONEXT)
G. Tsutsui (IBM)O. Weber (CEA-LETI)[4] Advanced Memory Technology
Chair:
K. Hamada (Micron Memory Japan Inc.)
Vice-chairs: Y. Sasago (Hitachi, Ltd.)
M.-J. Tsai (Industrial Tech. Res. Inst.)
Members:
H. Hwang (POSTECH)
K. Ito (Tohoku Univ.)
K. Kinoshita (Tottori Univ.)
G.-H. Koh (Samsung Electronics Co.Ltd.)
M.-H. Lee (Macronix International Co., Ltd.)
H. Saito (Fujitsu Semiconductor Ltd.)
T. Sakamoto (NEC Corp.)
W.-T. Sun (eMemory Technology Inc.)
K. Yamamoto (Toshiba Corp.)[5]Advanced Circuits and Systems
Chair:
Y. Mita (Univ. of Tokyo)
Vice-chairs: H. Takao (Kagawa Univ.)
H. Lin (National Chung-Hsing Univ.)
Members:
I. Akita (Toyohashi Tech)
J. -C. Guo (National Chiao Tung Univ.)
D. Kanemoto (Univ. of Yamanashi)
R. Kuroda (Tohoku Univ.)
T. Matsuda (Toyama Prefectural Univ.)
T. Minotani (NTT TELECON CO.,LTD.)
K. Takeuchi (Chuo Univ.)[6] Compound Semiconductor Electron Devices & Related
Technologies
Chair:
N. Hara (Fujitsu Labs. Ltd.)
Vice-chairs: T. Suzuki (JAIST)
E. Y. Chang (National Chiao Tung Univ.)
Members:
T. Hashizume (Hokkaido Univ.)
R. Hattori (Mitsubishi Electric Corp.)
M. Kuraguchi (Toshiba Corp.)
M. Kuzuhara (Univ. of Fukui)
E. Lind (Lund Univ.)
K. Maezawa (Univ. of Toyama)
S. Sasa (Osaka Inst. of Tech.)
J. Suda (Kyoto Univ.)
S. Suzuki (Tokyo Tech)
T. Tanaka (Panasonic Corp.)[7] Photonic Devices and Related Technologies
Chair:
Y. Ishikawa (Univ. of Tokyo)
Vice-chairs: H. Oohashi (NTT Electronics Corp.)
F. Boeuf (STMicroelectronics)
Members:
M. Fujita (Osaka Univ.)
H. Fukuda (NTT Device Innovation Center)
N. Iizuka (Toshiba Corp.)
T. Isu (Tokushima Univ.)
K. Kojima (Tohoku Univ.)
T. Mukaihara (Furukawa Electric Co., Ltd.)S. Nishikawa (Mitsubishi Electric Corp.)
T. Pinguet (Luxtera)
S. Saito (Univ. of Southampton)
T. Shimizu (PETRA)
L. Vivien (Univ. of Paris Sud)-7-

[8] Advanced Material Synthesis and Crystal GrowthTechnology
Chair:
T. Suemasu (Univ. of Tsukuba)
Vice-chairs: T. Nagata (NIMS)
W.-W. Wu (National Chiao Tung Univ.)
Members:
N. Fujimura (Osaka Pref. Univ.)
Y. Hotta (Univ. of Hyogo)
T. Iwai (Fujitsu Labs. Ltd.)
A. Kikuchi (Sophia Univ.)
H. Tatsuoka (Shizuoka Univ.)
E. S. Tok (National Univ. of Singapore)
N. Watanabe (NTT Device Tech. Labs)[9] Physics and Applications of Novel Functional Devices andMaterials
Chair:
T. Machida (Univ. of Tokyo)
Vice-chairs: T. Tanamoto (Toshiba Corp.)
P.-W. Li (National Central Univ.)
Members:
G. Austing (National Research Council Canada)
Y. Ishikawa (NAIST)
A. Kimura (Hiroshima Univ.)
G. Liang (National Univ. of Singapore)
K. Matsuda (Kyoto Univ.)
T. Nakaoka (Sophia Univ.)
A. Oiwa (Osaka Univ.)
T. Ota (NTT Basic Res. Labs.)
K. Terabe (NIMS)[10] Organic Materials Science, Device Physics, andApplications
Chair:
K. Fujita (Kyushu Univ.)
Vice-chair: T. Shimada (Hokkaido Univ.)
Members:
H. Endoh (NEC Corp.)
T. Hayashi (NTT Basic Res. Labs.)
M. Kitamura (Kobe Univ.)
H. Murata (JAIST)
H. Okada (Univ. of Toyama)
K. Tajima (RIKEN)
J. Takeya (Univ. of Tokyo)
S. Tokito (Yamagata Univ.)
M. Yoshida (AIST)[11] Sensors and Materials for Biology, Chemistry andMedicine
Chair:
J. Ohta (NAIST)
Vice-chairs: T. Sakata (Univ. of Tokyo)
C.-S. Lai (Chang Gung Univ.)
Members:
H.-M. Chen (National Chiao Tung Univ.)
C.-H. Liu (National Tsing Hua Univ.)
S. Machida (Hitachi, Ltd.)
M. Sasaki (Toyota Technological Inst.)
H. Tanaka (Panasonic Corp.)
T. Tanaka (Tohoku Univ.)
R. Tero (Toyohashi Tech)[12] Spintronics Materials and Devices
Chair:
Y. Suzuki (Osaka Univ.)
Vice-chairs: J. Nitta (Tohoku Univ.)
C.-Y. You (Inha Univ.)
Members:
T. Fukumura (Tohoku Univ.)
S. Mizukami (Tohoku Univ.)
T. Nagahama (Hokkaido Univ.)
Y. Ohno (Univ. of Tsukuba)
S. Ohya (Univ. of Tokyo)
Y. Saito (Toshiba Corp.)
H. Shimizu (Tokyo Univ. of Agri. & Tech.)
C. Song (Tsinghua Univ.)
A. Tulapurkar (IIT Mumbai)[13] Applications of Nanotubes, Nanowires, and Graphene
Chair:
Y. Ohno (Nagoya Univ.)
Vice-chairs: K. Kawaguchi (Univ. of Tokyo)
G. Eda (National Univ. of Singapore)Members:
S. Akita (Osaka Pref. Univ.)
M. Arita (Univ. of Tokyo)
N. Fukata (NIMS)
S. Hara (Hokkaido Univ.)
T. Kawai (NEC Corp.)
S. Lehmann (Lund Univ.)
K. Maehashi (Tokyo Univ. of Agri. & Tech.)
H. Miyazaki (Toshiba Corp.)
K. Nagashio (Univ. of Tokyo)
T. Takenobu (Waseda Univ.)
G. Zhang (NTT Corp.)[14] Power Devices and Materials
Chair:
H. Umezawa (AIST/Inst. Néel, CNRS)
Vice-chairs: D. Hisamoto (Hitachi, Ltd.)
C.-F. Huang (National Tsing Hua Univ.)
Members:
G. Feng (Epi World International Co., LTD)
S. Harada (Nagoya Univ.)
N. Iwamuro (Univ. of Tsukuba)
Y. Kawaguchi (Toshiba Corp.)
H. Kim (Hongik Univ.)
R. Kosugi (AIST)
T. Makino (AIST)
S. Matsumoto (Kyushu Inst. of Tech.)
K. Nishiwaki (Toyota Motor Corp.)
T. Uesugi (Toyota Central R&D Labs. Inc.)[15] Photovoltaic Materials and Devices
Chair:
M. Isomura (Tokai Univ.)
Vice-chair: K. Ohdaira (JAIST)
Members:
L.-S. Hong (National Taiwan University of Sci. &Tech., Presently at Taipei Economic and Cultural
Representative Office in Japan)
T. Hoshii (Univ. of Tokyo)
M. Ikegami (Toin Univ. of Yokohama)
Y. Kurokawa (Nagoya Univ.)
T. Negami (Panasonic Corp.)
T. Okamoto (Kisarazu National College of Tech.)
H. Suzuki (Univ. of Miyazaki)
T. Taima (Kanazawa Univ.)-8-

GENERAL INFORMATIONDATE

Short Courses: September 27, 2015 (in English)
Technical Sessions: September 28-30, 2015

CONFERENCE VENUE

Sapporo Convention Center
1-1-1 Higashi-Sapporo 6-jo, Shiroishi-ku, Sapporo, 003-0006, Japan
Phone: +81-11-817-1010, Fax: + 81-11-820-4300
http://www.sora-scc.jp/
SSDM2015 will be held at Sapporo Convention Center. The access map is available in the conference website.

SHORT COURSES:

Short Course lectures are scheduled on September 27, 14:00-18:30. Two Short Course lectures will be held eachat Middle-Sized Hall A and B.
These two courses are designed for beginners such as young researchers, young engineers, and students.
A) Trends and Challenges of Non-Volatile Memory Technologies in the Big-Data Era
B) Fundamentals and Applications of Two-Dimensional Materials*Registrants for Short Course are able to attend both courses freely. One printed copy of the text book for the
primary course that you chose is included in the registration fee. A printed copy of the text book for the othercourse can be purchased, but numbers are limited. Details can be found on page 45.

TECHNICAL SESSIONSPlenary Sessions:
Plenary Sessions are scheduled on September 28, 9:30-12:00 at Main Hall A, B.
Non-Technical Plenary Talk:“Building a Sustainable Society through Innovative Devices and Materials”
by Ryoji Chubachi (National Institute of Advanced Industrial Science and Technology, Japan)
Technical Plenary Talk:“Beyond blue LED”
by Hiroshi Amano (Nagoya University, Japan)“Low Power Electronics beyond 5nm”
by Kang L. Wang (University of California, Los Angeles, USA)
Details can be found on page 11.
Oral and Poster Presentations:
Oral presentations will be held in the rooms located on 1st and 2nd floors of Sapporo Convention Center from
September 28 to 30. Poster session will be held on September 29, 13:30-15:30 at Main Hall A, B.
Rump Session:
Rump Sessions are scheduled on September 29, 19:10-20:40 at Middle-Sized Hall A and B. Details can befound on page 44.

-9-

OTHER EVENTS

Welcome Reception:
Welcome Reception will be held on September 27, 18:30-20:00 at Restaurant, “SORA” (1st floor in theconference site: see floor guide on page 76).
Banquet:Conference Banquet will be held on Septembers 28, 19:00-21:00 at ROYTON Hall (3rd floor) of ROYTONSAPPORO HOTEL. The banquet fee is NOT included in the registration fee. Participants who wish to attend
the banquet are requested to order the banquet ticket beforehand.
Shuttle bus from the conference site to ROYTON SAPPORO HOTEL is available on September 28 18:00 18:40. Participants can take the shuttle bus in the outside of Entrance at the side of Main Hall C.
Award Ceremony:Award Ceremony for SSDM Award /Paper Award will be held in Opening Session starting 9:00 on September
28 at Main Hall A, B. Young Researcher Award Ceremony will be held in the Banquet starting 19:00 on
September 28 at ROYTON Hall (3rd floor) of ROYTON SAPPORO HOTEL.

REGISTRATIONThe on-site registration desk will be open September 27 to 30 at the Entrance Hall (1st floor). Open hours are as
follows:
September 27th 16:00 – 19:00
September 28th 08:10 – 17:30
September 29th 08:30 – 17:30
September 30th 08:30 – 11:00

SPECIAL ISSUE of JJAPThe Special Issue of Japanese Journal of Applied Physics will be published in April, 2016.
The online publication will start from February, 2016 in advance of the paper based publication.

INSURANCEThe organizer cannot accept responsibility for accidents that may occur during a delegate’s stay. Delegates are
therefore encouraged to obtain travel insurances (for medical, personal accident, and luggage) in their homecountries prior to departure.

INTRODUCTION TO SSDM2015 Web & App

SSDM2015 Website and mobile app provide an easy way to view abstracts or schedule sessions you areplanning to participate.
Web: https://confit.atlas.jp/ssdm2015
App: Search for "ssdm2015" in App Store or Google PlayA password is required to view abstracts. The password is "nezdwgif".

- 10 -

PLENARY SESSIONS

September 28 (Monday) 9:30-12:00 Main Hall A, B

Non-Technical Plenary Talk
9:30-10:15"Building a Sustainable Society through Innovative Devices and Materials"
Ryoji Chubachi
National Institute of Advanced Industrial Science and Technology, Japan

Break (15 min.)Technical Plenary Talk
10:30-11:15"Beyond blue LED"
Hiroshi Amano
Nagoya University, Japan
11:15-12:00"Low Power Electronics beyond 5nm"
Kang L. Wang
University of California at Los Angeles, USA- 11 -

Monday, September 28
Opening & Plenary Sessions (Main Hall A, B)
Opening Session
Chair: S. Hara, Hokkaido Univ.
9:00
Welcome Address
T. Fukui, Hokkaido Univ.
9:05
Welcome Address
K. Masu, JSAP
SSDM Award
SSDM Paper Award Ceremony
Non-Technical Plenary Session
Chair: S. Hara, Hokkaido Univ.
9:30 PL-1-1
Building a Sustainable Society through Innovative Devices and Materials
R. Chubachi, AIST, Japan
10:15 BreakTechnical Plenary Session
Chair: S. Fujita, Kyoto Univ.
10:30 PL-2-1
Beyond blue LED
H. Amano, Nagoya Univ., Japan
11:15 PL-2-2
Low Power Electronics beyond 5nm
K. L. Wang, UCLA, USA
Lunch
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-1: Light Sources andRelated Technologies(14:00-15:45)
Chairs: K. Kojima(Tohoku Univ.)
T. Isu(Tokushima Univ.)

C-1: Organic andPerovskite Photovoltaics(14:00-15:45)
Chairs: K. Tajima (RIKEN)
T. Taima(Kanazawa Univ.)

E-1: Carbon Interconnects
Chairs: S. Ogawa (AIST)
M. Sato(Fujitsu Labs.)

F-1: Advanced Vision &G-1: Wide-gap Materials
Imaging Circuits(14:00-15:45)(14:00-15:30)
Chairs: T. Nagata (NIMS)
Chairs: T. Minotani
T. Iwai(NTT TELECON)(Fujitsu Labs.)
H. Lin(Nat. Chung-Hsing
Univ.)

14:00 A-1-1 (Invited)
Photonic Structures in
LEDs and Solar Cells
U.T. Schwarz1, O. Höhn2,
B. Bläsi2, C. Wiesmann3
and N. Linder4, 1Univ. of
Freiburg, 2 Fraunhofer ISE,
3
Osram OS and 4Osram
GmbH (Germany)

14:00 C-1-1 (Invited)
Bandgap Science for
Organic Solar Cells
M. Hiramoto1, 2,
1Institute for Molecular
Science and 2JST-CREST(Japan)

14:00 E-1-1 (Invited)
Functionalized Insulated
Molecular Wires for
Molecular Electronics
J. Terao, Kyoto Univ.
(Japan)

14:00 F-1-1 (Invited)
VLSI Pulse-Coupled
Phase Oscillator
Networks and Their
Emulator toward Spikebased Computation forIntelligent Processing
H. Tamukoh, Y. Suedomi,
K. Matsuzaka and T.
Morie, Kyushu Inst. of
Tech. (Japan)- 12 -

14:00 G-1-1 (Invited)
Ultrapure DiamondGrowth by Chemical
Vapor Deposition
T. Teraji, NIMS (Japan)

Monday, September 28
Opening & Plenary Sessions (Main Hall A, B)

Lunch
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108bJ-1: Device andCharacterization(14:00-15:30)
Chairs: S. Matsumoto(Kyushu Inst. of
Tech.)
H. Umezawa(AIST)

K-1: Tunnel FET(14:00-15:50)
Chairs: M. Masahara(AIST)
M. Kobayashi(Univ. of Tokyo)

M-1: High-Speed &High-Frequency Devices(14:00-15:45)
Chairs: S. Suzuki(Tokyo Tech)
E. Y. Chang(NCTU)

N-1: Junction Technology(14:00-15:30)
Chairs: S. Migita (AIST)
T. Yamaguchi(Renesas
Electronics)

O-1: CBRAM and IGZO
Memory(14:00-15:30)
Chairs: T. Sakamoto (NEC)Y. Sasago (Hitachi)

P-1: Spin-orbit Effect andApplication for Sensors(14:00-15:45)
Chairs: S. Mizukami(Tohoku Univ.)
C. Song(Tsinghua Univ.)

14:00 J-1-1
Self-Aligned Formationof the Trench Bottom
Shielding Region in
4H-SiC UMOSFETs
T. Kojima1,2, S. Harada1,3,
Y. Kobayashi1,2, M.
Sometani1,2, K. Ariyoshi1,4,J. Senzaki1,3, M. Takei1,2,
Y. Tanaka1,3 and H.
Okumura1,3, 1R&D
Partnership for FuturePower Electronics Tech.,2
Fuji Electric Co., Ltd., 3
AIST and 4Toshiba Corp.
(Japan)

14:00 K-1-1 (Invited)
Novel Steep-Slope Switch
Device with Improved
Figures of Merit (FOM)
through Mechanism
Engineering for UltraLow-Power Applications
R. Huang, Q. Huang, C.
Wu, J. Wang, H. Zhu, C.
Chen, L. Guo and Y. Wang,
Peking Univ. (China)

14:00 M-1-1 (Invited)
InGaAs Channel for Low
Supply Voltage
Y. Miyamoto, T. Kanazawa,
Y. Yonai, K. Ohsawa, Y.
Mishima, M. Fujimatsu,
K. Ohashi, S. Nestu and S.
Iwata, Tokyo Tech (Japan)

14:00 N-1-1 (Invited)
Annealing Techniquesfor Low Temperature
Junctions Design in a 3D
VLSI Integration
C. Fenouillet Beranger1,
P. Batude1, S. Kerdiles1,
B. Mathieu1, P. Acosta
Alba1, L. Pasini2,1, V. Lu2,1,
F. Deprat1, L. Brunet1, B.
Sklenard1, P. Rivallin1, O.
Rozeau1, M-P. Samson2, 1,
B. Previtali1, L. Hortemel1,
N. Rambal1,2, V. Lapras1,2,
M. Casse1, S. Reboh1, F.
Piegas Luce1, P. Besson1,
R. Kachtouli1, A. Royer1,
D. Lafond1, H. Dansas1,
F. Aussenac1, J-P. Barnes1
and M. Vinet1, 1CEA-LETI
and 2STMicroelectronics(France)

14:00 O-1-1 (Invited)
Conductive Bridge
RAM (CBRAM):
functionality, reliability
and applications
G. Molas, J. Guy, M. Barci,
F. Longnos, G. Palma, E.
Vianello, P. Blaise, B. De
Salvo and L. Perniola,
CEA-LETI (France)

14:00 P-1-1 (Invited)
Observation of the
Quantum Anomalous
Hall Effect in a Magnetic
Topological Insulator
Electrically Tuned
Magnetic Order andMagnetoresistance in a
Topo-logical Insulator
S.-H. Ji, L.-L. Wang, X.
Chen, K. He, Y. Wang,
X.-C. Ma, Q.-K. Xue,
Tsinghua Univ. (China)- 13 -

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-1: Light Sources andRelated Technologies

C-1: Organic andPerovskite Photovoltaics

E-1: Carbon
Interconnects

F-1: Advanced Vision &Imaging Circuits

G-1: Wide-gap Materials

14:30 A-1-2
High Power and High
Temperature Operation
over 3W/85°C of an
InGaN Laser using a
Novel Double-heat-flow
Packaging Technology
S. Nozaki1, S. Yoshida2, K.
Yamanaka2, O. Imafuji1, S.
Takigawa1, T. Katayama1
and T. Tanaka1, 1Panasonic
Corp. and 2Panasonic
Semiconductor Solutions
Co., Ltd. (Japan)

14:30 C-1-2 (Invited)
Low Temperature
Solution Processablen-i-p Perovskite Solar
Cell
C.Y. Chu, C.Y. Chang and
W.F. Su, National Taiwan
Univ. (Taiwan)

14:30 E-1-2
MEMS Ascorbic Acid
Fuel Cells with Flexible
Electrodes of EnzymeCoated Graphene
Carbon Fiber Cloth
K. Hoshi1, F. Yudai1, K.
Muramatu2, H. Sumi2, Y.
Otani3, D. Kanakura3 andY. Nishioka1, 1Nihon Univ.,
2
Incubation Alliance, Inc.
and 3Inoue Mago Co. Ltd.
(Japan)

14:30 F-1-2
Reconfigurable Hybrid
Parallel Vision Processor
with Full-custom
Compact Distributed
MemoryZ. Chen, J. Yang, L. Liu
and N. Wu, Chinese
Academy of Sci. (China)

14:30 G-1-2
Effect of Stacking
Faults on Magnetic
Flux Pinning in BoronDoped Superconducting
Diamond Films
M. Shibata1,2, T. Kageura1,2,
T. Yamaguchi3, Y. Takano3
and H. Kawarada1,2,
1
Waseda Univ., 2 Kagami
Memorial Res. Inst. forMaterials Sci. and Tech.
and 3NIMS (Japan)

14:45 A-1-3
High Circular Dichroism
Lasing Characteristics inMetal-GaN Spiral Cavity
at Room Temperature
Y.H. Hsiao1, S.W. Liao1,
K.J. Chen1, M.H. Shih1,2and H.C. Kuo1, 1NCTU
and 2Research Center for
Applied Sci., Academia
Sinica (Taiwan)

15:00 C-1-3
Suppression of Thermal
Degradation in
Perovskite Solar Cells by
Robust Encapsulation
N. Hayashi, R. Uchida, M.
Suzuka, K. Kawano and
T. Sekiguchi, Panasonic
Corp. (Japan)

14:45 E-1-3
Interfacial Charge
Transfer Behaviour ofConducting Polymers
as Contact Electrode for
Semiconductor Devices
J. Kawakita, Y. Fujikawa,T. Nagata and T. Chikyow,
NIMS (Japan)

14:50 F-1-3
Low Contrast Motion
Capturing Vision Sensor
with Crystalline Oxide
Semiconductor FETbased In-Pixel Threshold
Voltage Compensation
CircuitS. Maeda1, T. Ohmaru1,
H. Inoue1, T. Nakagawa1,
Y. Kurokawa1, T. Ikeda1,
Y. Suzuki1, N. Yamade1, H.
Miyairi1, M. Ikeda2 and S.
Yamazaki1, 1Semiconductor
Energy Lab. Co., Ltd. and2
Univ. of Tokyo (Japan)

14:45 G-1-3
Beyond 10 μm Thick
Crack-Free GaN Growthon Si for High Power
Device Applications
A. Tanaka, R. Chen and
S.A. Dayeh, Univ. of
California, San Diego(USA)

15:00 A-1-4
Room Temperature
Operation of GaAs/
AlGaAs Quantum
Nanodisks Light Emitting
Diodes Fabricated by
Fusion of Bio-Template
and Neutral Beam
Etching
Y.C. Lai1,2, A. Higo2, C.
Thomas2, T. Kiba3, J.
Takayama3, M. Sugiyama4,
Y. Nakano4, P. Yu1, A.
Murayama3 and S.
Samukawa1,2, 1NCTU, 2
Tohoku Univ., 3 Hokkaido
Univ. and 4Univ. of Tokyo(Taiwan)

15:15 C-1-4
Degradation
Mechanism for Planar
Heterojunction
Perovskite Solar Cells
K. Yamamoto, Md.
Shahiduzzaman, Y.
Furumoto, T. Kuwabara,
K. Takahashi and T. Taima,
Kanazawa Univ. (Japan)

15:00 E-1-4
Effect of Current Stressduring Thermal CVD ofMultilayer Graphene on
Cobalt Catalytic Layer
H. Ichikawa, T. Uchida
and K. Ueno, Shibaura
Inst. of Tech. (Japan)

15:10 F-1-4
A CMOS SPAD Sensor
Featuring Asynchronous
Event-Extraction
Readout Architecture for
Faint Light Detection
X. Yang1, H.Z. Zhu2, T.
Nakura2, T. Iizuka1 and K.
Asada2, 1Univ. of Tokyoand 2VDEC Univ. of Tokyo(Japan)

15:00 G-1-4
Electrical Characteristics
of N-polar p-type GaN
Schottky Contacts
T. Aoki1, T. Tanikawa2, R.
Katayama2, T. Matsuoka2
and K. Shiojima1, 1Univ. of
Fukui and 2IMR, Tohoku
Univ. (Japan)

15:15 A-1-5
Plate-Insertion Stacking
Method for ThreeDimensional Photonic
Crystal Fabrication
T. Tajiri1, S. Takahashi2, J.
Tatebayashi2, S. Iwamoto1,2
and Y. Arakawa1,2, 1IIS,
Univ. of Tokyo and2
NanoQuine, Univ. ofTokyo (Japan)

15:30 C-1-5
Single-walled Carbon
Nanotube Film as
Cathode in Flexible
Indium-free Planar
Heterojunction
Perovskite Solar Cells
I. Jeon1, T. Chiba1, C.
Delacou1, Y. Guo1, A.
Kaskela2, O. Reynaud2, E.
Kauppinen2, S. Maruyama1
and Y. Matsuo1, 1Univ. ofTokyo and 2Aalto Univ.
(Japan)

15:15 E-1-5
Intercalation Dopingwith Metal Chlorides
in Low-TemperatureGrown Multilayer
CVD Graphenefor Interconnect
Applications
H. Miyazaki1,2, R.
Matsumoto3, M. Katagiri1,2,
D. Nishide1,4, R. Ifuku1,4, M.
Takahashi1, Y. Yamazaki1,2,
T. Matsumoto1,4, N.
Sakuma1,2, K. Ueno5, T.
Sakai1,2 and A. Kajita1,2,
1
LEAP, 2 Toshiba Corp., 3
Tokyo Polytechnic Univ.,
4Tokyo Electron Ltd. and5
Shibaura Inst. of Tech.
(Japan)

15:15 G-1-5
Novel Evaluation
Technique of GaN
Surfaces Using Laserinduced Terahertz
Emission
Y. Sakai1, I. Kawayama1,
H. Nakanishi2 and M.
Tonouchi1, 1Osaka Univ.
and 2SCREEN Holdings
Co., Ltd. (Japan)

15:30 E-1-6
Doped Carbon
Nanotubes forInterconnects
J. Robertson1, S.
Esconjauregui1, L.
D'Arsie1, J. Yang1, H.
Sugime1, G. Zhong1, S.
Vollebregt2, R. Ishihara2,
C. Cepek3, G. Duesberg4,
T. Hallam4 and Y. Guo1,
1
Univ. of Cambridge, 2
Delft Univ., 3 TASC and4
Trinity College Dublin(UK)

15:30 G-1-6
In Situ Synchrotron
X-ray Diffraction Studies
of Nitride Semiconductor
Materials
T. Sasaki and M. Takahasi,
JAEA (Japan)

15:30 A-1-6
Precise Coupling ofSingle Germanium
Quantum Dot to Silicon
Photonic Crystal
Nanocavity
C. Zeng1, Y. Ma2, Y.
Zhang1, Z. Jiang2, J. Yu1
and J. Xia1, 1Huazhong
Univ. of Sci. and Tech. and2
Fudan Univ. (China)- 14 -

Monday, September 28
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108bJ-1: Device andCharacterization

K-1: Tunnel FET

M-1: High-Speed &High-Frequency Devices

N-1: Junction Technology O-1: CBRAM and IGZO
MemoryP-1: Spin-orbit Effect andApplication for Sensors

14:15 J-1-2
Characterization ofProcess-Induced Defects
in SiC MOSFETs
by Cross-Sectional
Cathodoluminescence
R. Sugie, T. Uchida, K.
Kosaka and K. Matsumura,
Toray Research Center Inc.
(Japan)

14:30 K-1-2
Design ofComplementary RaisedDrain Tunneling FET
for Ultra-Low Voltage
Applications
Y.B. Zhao, E.R. Hsieh, C.H.
Chien and S.S. Chung,
NCTU (Taiwan)

14:30 M-1-2
Evaluation of InAs
HEMT with Non-Alloyed
Ohmic Contacts & Mesa
Sidewall Etch for RF
and Low-Power Logic
Applications
K.C. Yang1, J.N. Yao1, H.H.
Hsu1, Y.C. Lin1, H.T. Hsu2,
J.S. Maa1, E.Y. Chang1 andH. Iwai3, 1NCTU, 2 Yuan
Ze Univ. and 3Tokyo Tech
(Taiwan)

14:30 N-1-2
Microwave Plasma
Doping: As Activation
and Transport in Ge andSi
H. Miyoshi1, M. Oka1, Y.
Kobayashi1, H. Ueda1,
P.L.G. Ventzek2, Y.
Sugimoto1, G. Nakamura1,
Y. Hirota1, T. Kaitsuka1
and S. Kawakami1, 1Tokyo
Electron Ltd. and 2Tokyo
Electron America, Inc.
(Japan)

14:30 O-1-2
Visible-Light Effects on
Nanoscale Conducting
Filament in SiO2/Cu
CBRAM
T. Kawashima1,2, K.S. Yew1,
Y. Zhou1, M.K. Bera1, H.Z.
Zhang1 and D.S. Ang1,
1
NTU and 2Toshiba Corp.
(Singapore)

14:30 P-1-2
The Interfacial
Dzyaloshinskii-Moriya
Interaction on Pt/Co/
AlOx Multilayer with Ta
Buffer Layer
N.H. Kim1, J. Cho1, J.S.
Kim2, H.J.M. Swagten2 andC.Y. You1, 1Inha Univ. and2
Eindhoven Univ. of Tech.
(Korea)14:30 J-1-3
Effects of HighTemperature Diluted-H2
Annealing on Effective
Mobility of 4H-SiC
MOSFETs with
Thermally-Grown SiO2
H. Hirai and K. Kita, Univ.
of Tokyo (Japan)

14:50 K-1-3
Steep Subthreshold
Swing Metal-OxideSemiconductor FieldEffect Transistors
Utilizing Nonlinear Gate
Dielectric Insulators
H. Ota1,3, S. Migita1,3, K.
Fukuda1 and A. Toriumi2,3,
1
AIST, 2 Univ. of Tokyo and3
JST-CREST (Japan)

14:45 M-1-3 (Invited)
25nm InP HEMT TMIC
Process with 1 THz
Amplifier Circuit Gain
X.B. Mei, W. Yoshida, Z.
Zhou, M. Lange, J. Lee,
P.H. Liu, K. Leong, R. Lai
and W.R. Deal, Northrop
Grumman Corp (USA)

14:50 N-1-3
Formation of n+Poly-Ge
Films with High Electron
Concentration and HighElectron Mobility byFlash Lamp Annealingfor Poly-Ge nMOSFETs
M. Koike1,3, K. Usuda1,3,
T. Mori1,2, T. Maeda1,2 and
T. Tezuka1,3, 1GNC, AIST, 2
AIST and 3Toshiba Corp.
(Japan)

14:50 O-1-3
A 32-kb Embedded
SRAM Using 60nm Crystalline Oxide
Semiconductor
Transistors and Power
Gating with 45-ns 144-fJ/
bit Data Backup
W. Uesugi1, T. Ishizu1,
K. Kato1, T. Onuki1, H.
Tamura1, A. Isobe1, N.
Tsutsui1, Y. Suzuki1, Y.
Okazaki1, M. Fujita2, J.
Koyama1, Y. Yamamoto1
and S. Yamazaki1,
1
Semiconductor Energy
Lab. Co., Ltd. and 2VDEC
Univ. of Tokyo (Japan)

14:45 P-1-3
Estimation of Spin-orbit
Interaction Parameterswith Drifting Spins in
Semiconductor Quantum
Wells
Y. Kunihashi1, H. Sanada1,
H. Gotoh1, K. Onomitsu1,
M. Kohda2, J. Nitta2 andT. Sogawa1, 1NTT BRL and2
Tohoku Univ. (Japan)

14:45 J-1-4
Transient Thermal
Characteristics of
Packaged SiC SBDsand Its Temperature
Dependence
T. Kim and T. Funaki,
Osaka Univ. (Japan)

15:10 K-1-4
Variation Analysis for
Ultra-Low Voltage 8T
Tunnel FET SRAM Using
Closed-Form Analytical
Model of Static Noise
MarginH. Fuketa, S. O'uchi, K.
Fukuda, T. Mori, Y. Morita,
M. Masahara and T.
Matsukawa, AIST (Japan)

15:15 M-1-4
Wide Frequency Tuning
in Resonant-TunnelingDiode Terahertz
Oscillator Using
Forward-Biased Varactor
Diode
S. Kitagawa, S. Suzuki
and M. Asada, Tokyo Tech
(Japan)

15:10 N-1-4
Effects of Microwave
Annealing on Ge
pMOSFET with
Hydrogen-treatedInterfacial Layer
K.S. Chang Liao1, C.C.
Li1, L.J. Liu1, M.C. Li1,
W.F. Chi1, T.M. Lee1, T.H.
Su1, C.H. Fu1 and Y.J.
Lee2, 1National Tsing Hua
Univ. and 2NDL, NARLabs(Taiwan)

15:10 O-1-4
Analysis andExperimental Proofof Deterioration-free
Memory Device Using
CAAC-IGZO FET
M. Tsubuku, T. Takeuchi,
K. Ohshima, T. Murakawa,
M. Fujita, D. Shimada, S.
Sambonsuge, T. Atsumi,
M. Sakakura, K. Kato,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Corp. Ltd.
(Japan)

15:00 P-1-4
Electric Field Control
of Induced Magnetic
Moment in Pd on Co
Layer
A. Obinata1, D.
Hayakawa1, Y. Hibino1,
T. Koyama1, K. Miwa2, S.
Ono2 and D. Chiba1, 1Univ.
of Tokyo and 2CRIEPI(Japan)

15:00 J-1-5
Turn-on Analysis of SiIGBTs with Emitter
Trenches
S. Machida and Y.
Yamashita, Toyota Central
R&D Labs., Inc. (Japan)

15:30 K-1-5
Performance
Improvement in Lattice
Matched SiGeSn/GeSn
P-Channel TFET with
Type-II Staggered
Tunneling Junction
H. Wang1, G. Han1,2, Y.
Liu1, C. Zhang2 and Y.
Hao2, 1Chongqing Univ.
and 2Xidian Univ. (China)

15:30 M-1-5
A Resonant TunnelingSuper Regenerative
Detector with Input/
Output Isolation and
Improved Sensitivity
K. Hu, J. Pan, M. Mori
and K. Maezawa, Univ. of
Toyama (Japan)

15:15 J-1-6
RF Characteristics ofLDMOS Transistors with
Superjunction Structures
B.Y. Chen1,2, K.M. Chen1,
G.W. Huang1 and EdwardY.
Chang2, 1NDL, NARLabs
and 2NCTU (Taiwan)

15:15 P-1-5
Observation of theD´yakonov-Perel´ Spin
Relaxation in Epitaxial
Pt Thin Film and Its
Electrical Manipulation
J.C. Ryu, S. Takasuna,
K. Yoshizumi, M. Kohda
and J. Nitta, Tohoku Univ.
(Japan)

15:30 P-1-6
Highly Sensitive
Magnetic Field Sensor
Devices Based on
Magnetic Tunnel
Junctions with CoFeSiBElectrode
D. Kato1, M. Oogane1, K.
Fujiwara1, J. Jouno2, H.
Naganuma1, H. Katsurada2
and Y. Ando1, 1Tohoku
Univ. and 2KONICAMINOLTA, Inc. (Japan)- 15 -

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

A-2: MO and EO Devices(16:05-17:50)
Chairs: H. Shimizu(Tokyo Univ. ofAgri. & Tech.)
T. Shimizu(PETRA)

D-2: 2D Material-based
Devices(16:05-17:50)
Chairs: K. Nagashio(Univ. of Tokyo)
Y. Ohno(Nagoya Univ.)

E-2: Interconnects andBonding(16:05-18:05)
Chairs: M. Kodera(Toshiba)
M. Fujino(Univ. of Tokyo)

F-2: Advanced Imaging& Measurement Circuits
for Bio and Medical
Applications(16:05-17:55)
Chairs: H. Takao(Kagawa Univ.)
J. Ohta (NAIST)

16:05 A-2-1 (Invited)
Magneto-surfaceplasmon Effect inMagnetic/Nonmagnetic
Films
Y. Ashizawa and K.
Nakagawa, Nihon Univ.
(Japan)

16:05 D-2-1 (Invited)
Atomically-thin
Semiconductors
K. Tsukagoshi, NIMS
(Japan)

16:05 E-2-1 (Invited)
Ultra-Heat ResistantInterconnection for
Wide Band Gap
Semiconductors
K. Suganuma, S. Nagao,
T. Sugahara and J. Jiu,
Osaka Univ. (Japan)

16:05 F-2-1 (Invited)
Electronic Device
from TFT Display
for Applications on
Biological Cells
A. Tixier Mita, S. Ihida,
B.D. Segard, G.A.
Cathcart, T. Takahashi, H.
Fujita and H. Toshiyoshi,
Univ. of Tokyo (Japan)

16:35 A-2-2
Spatially Resolved Pumpprobe Magneto-optical
Kerr Effect in Permalloy
Films
S. Iihama1, Y. Sasaki1, Y.
Ando1 and S. Mizukami2,
1
Tohoku Univ. and 2WPIAIMR, Tohoku Univ.
(Japan)

16:35 D-2-2
Ultra-Sensitive 2D
Photodetectors Basedon Large-Scale
Molybdenum Disulfide
Crystals
Z.P. Ling1, R. Yang1, J.W.
Chai2, S.J. Wang2, Y. Tong1,
D. Lei1, Q. Zhou1, X.
Gong1, D.Z. Chi2 and K.W.
Ang1, 1SNDL, NUS and
2Inst. of Material Res. andEng. (Singapore)

16:35 E-2-2 (Invited)
Nanomechanical
Characterization ofIntermetallic Compounds
in MiniaturizedInterconnections
J.M. Song, Natl. Chung
Hsing Univ. (Taiwan)

16:35 F-2-2
A CMOS Image Sensor
with Lateral Electric
Field Modulation
Pixels for Sub NanoSecond Time Response
Fluorescence Lifetime
Imaging Microscopy
Z. Li, M.W. Seo, K.
Kagawa, K. Yasutomi
and S. Kawahito, Univ. of
Shizuoka (Japan)

16:50 A-2-3
Magneto-Optical
Switching Devices
Based on Si Photonic
Resonators
K. Noda, K. Okada, Y.
Amemiya and S. Yokoyama,
Hiroshima Univ. (Japan)

16:50 D-2-3
Source/Drain Contact
Engineering of
Molybdenum Disulphide(MoS2) Devices
W.S. Leong, X. Luo, Y.
Li, K.H. Khoo, S.Y. Quek
and J.T.L. Thong, NUS(Singapore)

17:05 E-2-3
Wafer Bonding of
SiC-SiC and SiC-Si
by Modified Suface
Activated Bonding
MethodF. Mu1, M. Fujino1,
T. Suga1, K. Iguchi2,
H. Nakazawa2 and Y.
Takahashi2, 1Univ. of Tokyoand 2Fuji Electric Co., Ltd.
(Japan)

16:55 F-2-3
Improvement of Power
Consumption and SNRof Self-reset Pixels for
an Implantable CMOS
Image Sensor
T. Yamaguchi, Y. Sunaga,
M. Haruta, H. Takehara,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

17:05 A-2-4
Electro-Optic Polymer/
TiO2 Slot Waveguide
Modulators andEnhanced Electro-Optic
Coefficient of 260 pm/V
Y. Enami1, Y. Jouane1,
J. Luo2 and A. Jen2,
1
Kochi Univ. of Tech. and2
Washington State Univ.
(Japan)

17:05 D-2-4
Tolerance to UV-O3
Exposure of CVD and
Mechanically Exfoliated
MoS2 & Fabrication of
Top-Gated CVD MoS2
FETs
S. Kurabayashi1 and K.
Nagashio1,2, 1Univ. ofTokyo and 2JST-PRESTO(Japan)

17:25 E-2-4
Transfer Methods of
Ultrathin Piezoelectric
Strain Sensor to Flexible
Printed Circuits
T. Yamashita1, S.
Takamatsu1, H. Okada1, T.
Itoh2 and T. Kobayashi1,
1
AIST and 2Univ. of Tokyo(Japan)

17:15 F-2-4
Wireless Data
Transmission in a Brain
Tissue with Intra-Body
Communication by
a Micro-Sized Image
Sensor
H. Hayami, K. Nagata,
M. Haruta, H. Takehara,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

17:20 A-2-5 (Late News)
Stimulated Emission with
Nearly 100% Circular
Polarization at RT in
GaAs-based DHs with
Fe/Crystalline AlOX Spin
Injectors
N. Nishizawa, K.
Nishibayashi and H.
Munekata, Tokyo Tech
(Japan)

17:20 D-2-5
HfS2 Electron Double
Layer Transistor withHigh Drain Current
T. Kanazawa1, T.
Amemiya1,2, A. Ishikawa2,3,
V. Upadhyaya1, T. Tanaka2,
K. Tsuruta3 and Y.
Miyamoto1, 1Tokyo Tech,
2
RIKEN and 3Okayama
Univ. (Japan)

17:45 E-2-5
3D Sequential Integration
via Direct Bondingof Highly Conductive
Sputtered Tungsten Films
L. Benaissa1,2, P.
Gondcharton1,2, B.
Imbert1,2, C. Sabbione1,2, G.
Rodriguez1,2, D. Mariolle1,2
and D. Lafond1,2, 1Univ.
Grenoble Alpes and 2CEALETI (France)

17:35 F-2-5
Area-Efficient andWide-Range Impedance
Analysis Circuit forMultichannel High
Quality Brain Signal
Recording System
T. Iwagami1, T. Tani1,
K. Ito1, S. Nishino2, T.
Harashima1, K. Kiyoyama2
and T. Tanaka1, 1Tohoku
Univ. and 2Nagasaki Inst.
of Applied Sci. (Japan)- 16 -

1F 108aMonday, September 28
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207J-2: Process andCharacterization(16:05-17:05)
Chairs: S. Harada(Nagoya Univ.)
T. Uesugi(Toyota Central
R&D Labs.)

K-2: Ge / III-V(16:05-17:50)
Chairs: O. Weber(CEA-LETI)
G. Tsutsui (IBM)M-2: GaN FETs
(16:05-17:50)
Chairs: T. Hashizume(Hokkaido Univ.)
M. Kuzuhara(Univ. of Fukui)N-2: Process for FullyDepleted Devices(16:05-17:05)
Chairs: H. Morioka(SOCIONEXT)T. Aoyama(Toshiba)

O-2: Nano EngineeredThin Oxide Film
(16:05-17:55)
Chairs: N. Fujimura(Osaka Pref. Univ.)
H. Saito(Fujitsu Semicon.)

16:05 J-2-1
Al Doping of 4H-SiC
by Laser Irradiation
to Coated Film and Its
Application to Junction
Barrier Schottky DiodeA. Ikeda, R. Sumina, H.
Ikenoue and T. Asano,
Kyushu Univ. (Japan)

16:05 K-2-1 (Invited)
Ge CMOS Devices and
Logic Circuits
H. Wu and P.D. Ye, Purdue
Univ. (USA)

16:05 M-2-1 (Invited)
GaN Metal-OxideSemiconductor HEMTs:
Selected Physical Aspects
and Characterization
M. Tapajna, D. Gregusova
and J. Kuzmik, Instituteof Electrical Engineering,
Slovak Academy of
Sciences (Slovakia)

16:05 N-2-1
Optimization ofExtension Doping
Condition of FinFETs
for Ultra-Low-Power
Applications
T. Matsukawa, Y.X. Liu, T.
Mori, Y. Morita, S. O'uchi,
H. Fuketa, S. Otsuka, S.
Migita and M. Masahara,
AIST (Japan)

16:05 O-2-1 (Invited)
Scaling and Optimizationof Ferroelectric Hafnium
Oxide for Memory
Applications and Beyond
J. Mueller, P. Polakowski
and S. Riedel, Fraunhofer
IPMS (Germany)

16:20 J-2-2
4H-SiC Vertical Gate
Trench with a WellControlled Shape
Uniformly Formed byHigh Rate Etching andAnnealing with Solid
SourceH. Kitai, H. Shiomi, H.
Tamaso and K. Fukuda,
AIST (Japan)

16:35 K-2-2
Impact of Bandstructure
Effects in III-V
nMOSFETs
G. Hiblot1,3, Q. Rafhay3, G.
Mugny1,2, T. Ferrotti1,2, G.
Ghibaudo3 and F. Boeuf1,
1
STMicroelectronics, 2
CEA-LETI and 3IMEPLAHC (France)

16:35 M-2-2 (Late News)
Highly Reduced Current
Collapse in AlGaN/GaN
HEMTs by Combined
Application of Oxygen
Plasma Treatment andField-plate Structures
J. Asubar, S. Yoshida, H.
Tokuda and M. Kuzuhara,
Univ. of Fukui (Japan)

16:25 N-2-2
Ω-Gate Nanowire
Transistors Realized
by Sidewall Image
Transfer Patterning:
35nm Channel Pitch
and Opportunities for
Stacked-Nanowires
Architectures
L. Gaben1,2,3, S. Barraud1,
P. Pimenta-Barros1, Y.
Morand2, J. Pradelles1,
M.P. Samson2, B. Previtali1,
P. Besson2, F. Alain1, S.
Monfray2, F. Boeuf2, T.
Skotnicki2, F. Balestra3 and
M. Vinet1, 1CEA-LETI, 2
STMicroelectronics and3
IMEP-LAHC (France)

16:35 O-2-2
Effect of Stress on
Ferroelectricity of(Hf0.5Zr0.5)O2 Thin Films
H. Funakubo1, T.
Shiraishi1, T. Shimizu1, T.
Yokouchi1, T. Oikawa1 andH. Uchida2, 1Tokyo Techand 2Sophia Univ. (Japan)

16:35 J-2-3
Fabrication of Nitrogenvacancy Centers inDiamond Power Devices
for Electric-Field Sensing
W. Naruki1, K. Tahara1, T.
Iwasaki1,3, H. Kato2,3, T.
Makino2,3, M. Ogura2,3, D.
Takeuchi2,3, S. Yamasaki2,3
and M. Hatano1,3, 1Tokyo
Tech, 2 AIST and 3JSTCREST (Japan)

16:55 K-2-3
High Performance Low
Thermal Budget Ge nand p-MOSFETs byusing Ion Implantation
after Germanidation
Technique
W.H. Chang, H. Ota and T.
Maeda, AIST (Japan)

16:50 M-2-3
AlGaN/GaN MOSHFETs Exhibiting
Improved Hysteresis inTransfer Characteristics
with Recessed Gate
Structures Formed by
Selective Regrowth
S. Nakazawa, N. Shiozaki,
N. Negoro, N. Tsurumi,
Y. Anda, M. Ishida and T.
Ueda, Panasonic Corp.
(Japan)

16:45 N-2-3
A New Method to Induce
Local Tensile Strain in
SOI Wafers: First Strain
Results of the "BOX
Creep" Technique
A. Bonnevialle1,2, C. Le
Royer2, Y. Morand1, S.
Reboh2, J.M. Pedini1, A.
Roule2, D. Marseilhan2, P.
Besson1, D. Rouchon2, N.
Bernier2, C. Tabone2, C.
Plantier2 and M. Vinet2,
1
STMicroelectronics and2
CEA-LETI (France)

16:55 O-2-3
Switching Mechanism in
GeSbTe Phase Change
Memory Superlattices
J. Robertson and X. Yu,
Cambridge Univ. (UK)

16:50 J-2-4
Evaluation of
Temperature
Dependence of Surface
Recombination Velocities
for n-type 4H-SiC
K. Kohama, Y. Mori, M.
Kato and M. Ichimura,
Nagoya Inst. of Tech.
(Japan)

17:15 K-2-4
Steep-Slope Tunnel
FET using InGaAs-InP
Core-Shell Nanowire/Si
Heterojunction
K. Tomioka1,2, F. Ishizaka1,
J. Motohisa1 and T. Fukui1,
1
Hokkaido Univ. and 2JSTPRESTO (Japan)

17:05 M-2-4
MOS Characteristics
on Homoepitaxial GaN
Layer
S. Takashima1, K. Ueno1,
H. Matsuyama1, M. Edo1, J.
Suda2 and K. Nakagawa3,
1
Fuji Electric Co., Ltd., 2
Kyoto Univ. and 3Univ. of
Yamanashi (Japan)

17:15 O-2-4
Topotactic Reductive
Synthesis of A-site
Cation-Ordered
Perovskite YBaCo2Ox (x= 4.5-5.5) Epitaxial Thin
Films
T. Katayama1, A.
Chikamatsu1,2, T.
Fukumura2,3 and T.
Hasegawa1,2,4, 1Univ. ofTokyo, 2 JST-CREST, 3
Tohoku Univ. and 4KAST(Japan)17:35 K-2-5 (Late News)
Investigation of FOM
of Tunnel FET Devices
and OTA Design for
Analog/Mixed-Signal
Applications
Y.N. Chen1, P. Su1, J.C.S.
Woo2 and C.T. Chuang1,
1
NCTU and 2UCLA(Taiwan)

17:20 M-2-5
Low-Frequency Noisein AlTiO/AlGaN/
GaN Metal-InsulatorSemiconductor
Heterojunction FieldEffect Transistors
S.P. Le, T. Ui, T.Q. Nguyen,
H.A. Shih and T. Suzuki,
JAIST (Japan)

17:35 O-2-5
Formation of Ge Oxide
Film by Neutral Beam
Post Oxidation using Al
Metal Film
T. Ohno1,2, D. Nakayama3
and S. Samukawa1,3, 1WPIAIMR, Tohoku Univ., 2 JSTPRESTO and 3IFS, Tohoku
Univ. (Japan)- 17 -

1F 108b

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102A-2: MO and EO Devices

D-2: 2D Material-based
Devices

17:35 A-2-6 (Late News)Electrical Manipulationof Exchange Springin Antiferromagnetic
MetalsC. Song1, Y.Y. Wang1,
S.M. Zhou2 and F. Pan1,
1
Tsinghua Univ. and2
Tongji Univ. (China)

17:35 D-2-6
Schottky Barrier Heights
and Band Alignmentsin Transition Metal
Dichalcogenides
J. Robertson and Y. Guo,
Cambridge Univ. (UK)- 18 -

1F 107a1F 107b

1F 108aMonday, September 28
2F 201

2F 202

2F Small Hall

2F 204M-2: GaN FETs
17:35 M-2-6
Fabrication andCharacterization of
AlTiO/InAlN/AlN/
GaN Metal-InsulatorSemiconductor FieldEffect Transistor
S. Yamaguchi, T. Ui, J.
Liang, H.A. Shih and T.
Suzuki, JAIST (Japan)- 19 -

2F 206

2F 207

1F 108b

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-3: Optical
Interconnection(9:00-10:45)
Chairs: H. Fukuda (NTT)S. Itabashi(NTT-AT)

C-3: Thin-film
Photovoltaics(9:00-10:30)
Chairs: K. Ohdaira(JAIST)
T. Negami(Panasonic)

D-3: Nanocarbon-based
Devices(9:00-10:30)
Chairs: T. Kawai (NEC)K. Maehashi(Tokyo Univ. ofAgri. & Tech.)F-3: Microfluidics(9:00-10:45)
Chairs: J. Ohta (NAIST)
C.-H. Liu (National
Tsing Hua Univ.)

G-3: Dots and Nonstructures(9:00-10:45)
Chairs: T. Iwai
(Fujitsu Labs.)
T. Nagata (NIMS)

9:00 A-3-1 (Invited)
High-Density Optical
Interconnection Based on
Silicon Photonics
Y. Tanaka, S. Sekiguchi and
K. Morito, PETRA (Japan)

9:00 C-3-1 (Invited)Thin-Film Solar Cells
Based on Liquid Phase
Crystallized Silicon on
Glass
D Amkreutz1, J Haschke2,
S Kuehnapfel1, P. Sonntag1
and B Rech1, 1HelmholtzZentrum Berlin fuer
Materialien und EnergieGmbH and 2Ecole
Polytechnique Federale deLausanne (Germany)

9:00 D-3-1
Development of Highly
Sensitive Tactile Sensor
using Multi-Walled
Carbon Nanotube Arrays
K. Suzuki, T. Nozaki and
H. Miura, Tohoku Univ.
(Japan)9:00 F-3-1 (Invited)
Label-Free Integrated
Plasmonic Biosensors
for Cytokine
Immunodiagnostics
M.T. Chung, P. Chen, B.R.
Oh and K. Kurabayashi,
Univ. of Michigan (USA)

9:00 G-3-1
High-density Selfassembled Quantum Dots
of InGaAs for Ultrafast
and Efficient Spin
Injection
J. Takayama1, T. Kiba2,
T. Yamamura1, D.
Yamazaki1, S. Chen1 andA. Murayama1, 1Hokkaido
Univ. and 2Kitami Inst. of
Tech. (Japan)

9:30 A-3-2
High-Performance MOS
Capacitor Type Si Optical
Modulator, and Surface
Illumination-type Ge
Photodetector for Optical
Interconnection
J. Fujikata1, S. Takahashi1,
M. Takahashi2, M.
Noguchi1, M. Miura1,
T. Nakamura1 and Y.
Arakawa3, 1PETRA, 2
AIST and 3Univ. of Tokyo(Japan)9:30 C-3-2
Development of
Nearly Crystallized
P-type HydrogenatedAmorphous Silicon
Oxide as Window Layerin a-Si:H Single-junction
and a-Si:H/a-Si1-X Gex:H
Tandem Solar cells
P.L. Chen, W.H. Tu, C.H.
Hsu and C.C. Tsai, NCTU
(Taiwan)

9:15 D-3-2
Micro-Supercapacitorswith Carbon Nanotubes
and Flexible Components
F. Tanaka1, A. Sekiguchi2,
K.U. Laszczyk1, K.
Kobashi2, S. Sakurai2, D.N.
Futaba2, T. Yamada2 andK. Hata2, 1TASC and 2AIST(Japan)9:30 F-3-2 (Invited)
Molecular Analysis in
Biological Samples by
Actuator-Integrated
Microfluidic Chips
Y. Takamura1,2, 1JAIST and
2
JST-CREST (Japan)

9:15 G-3-2 (Late News)
Fabrication andMagnetic Properties of
Co-doped La0.5Sr0.5TiO3Nanofibers
S. Maensiri1, W. Ponhan2
and V. Amornkitbamrung2,
1
Suranaree Univ. of Tech.
and 2Khon Kaen Univ.
(Thailand)

9:45 A-3-3
Ultra-Compact 100Gb/s
Coherent Receiver
Monolithically Integrated
on Silicon
Z. Tu, P. Gong, Z. Zhou
and X. Wang, Peking Univ.
(China)9:45 C-3-3 (Invited)
Development of CTSBased Thin Film Solar
Cells
H. Araki1, A. Kanai1, A.
Takeuchi1, K. Jimbo1 and
H. Katagiri1, Nat. Inst.
of Tech., Nagaoka Coll.
(Japan)9:30 D-3-3
Wafer–Scale Statistical
Characterization of
Carbon Nanotube Thin–
Film Transistors
J. Hirotani, S. Kishimoto
and Y. Ohno, Nagoya Univ.
(Japan)

10:00 F-3-3
Detection of AmyloidBeta Proteins during
Fibrillization Process by
Liposome-Immobilized
Microcantilevers in
Microfluidic Channel
M. Sohgawa1, Z. Zhang2,
Y. Abe1, T. Abe1, K.
Yamashita2 and M. Noda2,
1
Niigata Univ. and 2Kyoto
Inst. of Tech. (Japan)

9:30 G-3-3
Characteristics of Highly
Stacked InAs Quantumdot Laser Grown
on Vicinal (001)InP
Substrate
K. Akahane1, N.
Yamamoto1, T. Umezawa1,
A. Matsumoto1 and T.
Kawanishi1,2, 1NICT and
2
Waseda Univ. (Japan)

10:00 A-3-4
Suppression of Void
Generation in Direct
Wafer Bonding for Si
High-k MOS Optical
Modulators using Al2O3/
HfO2 Bonding Interface
J.H. Han1, 2, M. Takenaka1,
2
and S. Takagi1, 2, 1Univ.
of Tokyo and 2JST-CREST(Japan)

10:15 C-3-4
Crystallographic and
Optical Properties,
and Band-diagramsof CuInSe2, CuIn3Se5,
and CuIn5Se8 Phases in
Cu-poor Cu2Se-in2Se3
Pseudo-binary System
T. Maeda, W. Gong andT. Wada, Ryukoku Univ.
(Japan)9:45 D-3-4
PMMA Dry Transfer ofGraphene on h-BN using
Heating/Cooling System
T. Uwanno1, K. Watanabe2,
T. Taniguchi2 and K.
Nagashio1,3, 1Univ. ofTokyo, 2 NIMS and 3JSTPRESTO (Japan)

10:15 F-3-4
A Microfluidic Labchip
For Angiogenesis Studies
Using Multi-Gradients
Generator and Cell
Trapping Structures
C.H. Liu1, C.H. Chin1,
Y.L. Chiu1 and K.Y. Lee2,
1
National Tsing Hua Univ.
and 2Shuang Ho Hospital(Taiwan)

9:45 G-3-4
Selective Epitaxy of Ge
on Nano-tip Patterned Si(001): Towards Defectfree Ge Islands
G. Niu1, G. Capellini1,2,
T. Niermann3, M.
Salvalaglio4, A.
Marzegalli4, M.A.
Schubert1, P. Zaumseil1,
H.M. Krause1, O.
Skibitzki1, M. Lehmann3,
F. Montalenti4, Y.H. Xie5
and T. Schroeder1,6, 1IHP,
2Univ. Roma Tre, 3 TU
Berlin, 4 Univ. degli Studi
di Milano-Bicocca, 5 UCLA
and 6BTU (Germany)

10:00 D-3-5
Fluorinated Graphene
as Passivation Layer ofGraphene Field EffectTransistor
Y.P. Ho, K.I. Ho, B. Liu
and C.S. Lai, Chang Gung
Univ. (Taiwan)

10:30 F-3-5 (Late News)An Integrated Onechip-sensor System for
MiRNA Quantitative
Analysis Based on Digital
Droplet PCR
M. Tsukuda1, R.S.
Wiederkehr3, Q. Cai3,
B. Majeed3, P. Fiorini3,
T. Stakenborg3 and T.
Matsuno2, 1Panasonic
Corp. Advanced ResearchLab., 2 Panasonic Corp.
AIS Company and 3IMEC
vzw (Japan)

10:00 G-3-5
Miniband Formulationin Ge/Si Quantum Dot
Array
Y.C. Tsai1, M.Y. Lee1, Y.
Li1 and S. Samukawa2,
1
NCTU and 2Tohoku Univ.
(Taiwan)

10:15 A-3-5
Monolithically Integrated
Quantum Dot Optical
Modulator with
Semiconductor Optical
Amplifier for T-Band
Optical Communication
N. Yamamoto1, K.
Akahane1, T. Umezawa1,
A. Matsumoto1 and T.
Kawanishi1,2, 1NICT and
2
Waseda Univ. (Japan)- 20 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108b

H-3: Novel Functional
Devices(9:00-10:45)
Chairs: T. Machida(Univ. of Tokyo)
T. Ota (NTT BRL)

K-3: Characterization I(9:00-10:30)
Chairs: K. Maekawa(Renesas Electronics)
N. Planes(STMicroelectronics)

M-3: SiC &GaN Power Devices(9:00-10:30)
Chairs: H. Umezawa(AIST)
R. Hattori(Mitsubishi
Electric)

N-3: Advanced Process
and Characterization(9:00-10:30)
Chairs: T. Nakayama(Chiba Univ.)
S. Migita (AIST)

O-3: ReRAM 1(9:00-10:50)
Chairs: M.-H. Lee(Macronix)
K. Yamamoto(Toshiba)

P-3: Semiconductor andRF Spintronics(9:00-10:45)
Chairs: J. Nitta(Tohoku Univ.)
Y. Saito (Toshiba)

9:00 H-3-1 (Invited)
Gigahertz SingleElectron Pump Towards
a Representation of the
New Ampere
A. Fujiwara, G. Yamahata
and K. Nishiguchi, NTT
BRL (Japan)

9:00 K-3-1 (Invited)
Impacts of RDF, RTN,
and Shot Noise on
Nanowire Transistor
Performance Studied byEnsemble Monte Carlo/ Molecular Dynamics
Simulation
T. Watanabe, Waseda Univ.
(Japan)9:00 M-3-1 (Invited)
SiC Power Electronics- Current and Future
Prospects of SiC Devices
P. Friedrichs, Infineon AG(Germany)

9:00 N-3-1 (Invited)High Performance PolyGe p- and nMOSFETs
Fabricated by Flash
Lamp Annealing
K. Usuda1,2, Y. Kamata1,2,
Y. Kamimuta1,2, M. Koike1,2,
T. Mori2,3, T. Maeda2,3
and T. Tezuka1,2, 1Toshiba
Corp., 2 GNC-AIST and
3
AIST (Japan)

9:00 O-3-1 (Invited)
TMO-ReRAM Based
Synaptic Device
for Neuromorphic
Computing
J.F. Kang, B. Gao, Z. Chen,
P. Huang, Y.D. Zhao, L.F.
Liu and X.Y. Liu, Peking
Univ. (China)

9:00 P-3-1 (Invited)
Graphene as a Versatile
Spin Tunnel Barrier
E. Cobas, US Naval Res.
Lab. (USA)9:30 H-3-2
Formation of Coupled
Triple Silicon Quantum
Dot with a Compact
Device Structure
T. Uchida1, A. Fukuchi1, M.
Arita1, A. Fujiwara2 andY. Takahashi1, 1Hokkaido
Univ. and 2NTT BRL(Japan)9:30 K-3-2
Effect of 3D Current
Distribution in the
Characterizing Parasitic
Resistance of FinFETs
P.Y. Lin1, Y.L. Chiu1, F.H.
Meng1, K.H. Chen2, S.
Hao2, B.Z. Tien2, T.S.
Chang2, C.J. Lin1 and Y.C.
King1, 1National Tsing Hua
Univ. and 2TSMC (Taiwan)

9:30 M-3-2
Development of Novel
1200V-Class 4H-SiC
Implantation andEpitaxial Trench
MOSFETs with Low OnresistanceH. Shiomi, H. Kitai, H.
Tamaso and K. Fukuda,
AIST (Japan)

9:30 N-3-2
Direct Evidence of Freecarrier Induced Bandgap Narrowing in Ge
S. Kabuyanagi, T.
Nishimura, T. Yajimia andA. Toriumi, Univ. of Tokyo(Japan)9:30 O-3-2
Microstructural Change
in Cu/WOx/TiN during
Resistive Switching
M. Arita, A. Takahashi,
Y. Ohno, A. Nakane, A.
Tsurumaki Fukuchi and Y.
Takahashi, Hokkaido Univ.
(Japan)9:30 P-3-2
Suppression of
Spin Transport in
Ferromagnet/Oxide/
Semiconductor Junctions
by Inserting Magnetic
Impurities
A. Spiesser, H. Saito, S.
Yuasa and R. Jansen, AIST
(Japan)9:45 H-3-3
Solid-State Operationof Mott Transistors with
Ultra-Thin VO2 Channels
T. Yajima1,2, T. Nishimura1,2
and A. Toriumi1,2, 1Univ.
of Tokyo and 2JST-CREST(Japan)9:50 K-3-3
Quantitative
Understanding of
Scanning Spreading
Resistance Microscopy
with Schottky Contact
Model
S. Itai, L. Zhang, K.
Matsuzawa, M. Ono and
T. Ishihara, Toshiba Corp.
(Japan)9:45 M-3-3
A High Current
Operation in a 1.6 kV
GaN-based Trenched
Junction Barrier
Schottky (JBS) DiodeR. Kajitani, H. Handa,
S. Ujita, D. Shibata,K. Tanaka, M. Ogawa,H. Ishida, S. Tamura,
M. Ishida and T. Ueda,
Panasonic Corp. (Japan)

9:50 N-3-3
Incorporated Nitrogen
Behavior in Plasmanitrided Silicon Oxides
Formed by Chemical
Vapor Deposition Method
N. Shinoda, H. Itokawa,
R. Fujitsuka, K. Sekine,
S. Onoue and J. Tonotani,
Toshiba Corp. (Japan)

9:50 O-3-3
Defect Properties andMaterials Selection for
Oxide RRAM
J. Robertson and Y. Guo,
Cambridge Univ. (UK)

9:45 P-3-3
Phonon-Assisted Efficient
Spin Injection in InGaAs
Quantum Well-Quantum
Dot Tunnel-Coupled
Structures
S.L. Chen1, T. Kiba2,
J. Takayama1 and A.
Murayama1, 1Hokkaido
Univ. and 2Kitami Inst. of
Tech. (Japan)

10:00 H-3-4
Experimental
Demonstration andModeling of GeTe6
Oscillators and Threshold
Switches for Emerging
Architectures andMemoryA.A. Sharma, Y.E. Kesim,
J.A. Bain, M. Skowronski
and J.A. Weldon, Carnegie
Mellon Univ. (USA)10:10 K-3-4
Assessment of GIDLReduction and Vth
Modulation with Plasma
Doped FinFETs
J.M. Lee1,2, K.H. Cho2,
H.J. Bae2, D.W. Kim2,
S. Paak2 and I. Chung1,
1
Sungkyunkwan Univ. and2
Samsung Electronics Co.
Ltd. (Korea)

10:00 M-3-4
Investigationof Breakdown
Characteristics in Highvoltage GaN-HEMTs
T. Suwa, W. Saito, T.
Uchihara, T. Naka and T.
Kobayashi, Toshiba Corp.
(Japan)10:10 N-3-4
Comprehensive
Understanding of SiO2-IL
Scavenging in HfO2/SiO2/
Si Stack
X. Li, T. Yajima, T.
Nishimura and A. Toriumi,
Univ. of Tokyo (Japan)

10:10 O-3-4
Reproducing Resistive
Switching Effect by Soretand Fick Diffusion in
Resistive Random Access
Memory (ReRAM)
K. Kinoshita1,2, R. Koishi1,
T. Moriyama1,2, K.
Kawano1, H. Miyashita1,2,
S.S. Lee1,2 and S. Kishida1,2,
1
Tottori Univ. and 2Tottori
Integrated Frontier Res.
Center (Japan)

10:00 P-3-4
Magnetic Properties andIntrinsic Ferromagnetismin Narrow-gap
Ferromagnetic
Semiconductor (Ga,Fe)
Sb
N.T. Tu1, P.N. Hai2, L.D.
Anh1 and M. Tanaka1,
1
Univ. of Tokyo and 2Tokyo
Tech (Japan)

10:30 O-3-5
A Study of Array
Resistance Distribution
and a Novel Operation
Algorithm for WOx
ReRAM Memory
K.C. Hsu, F.M. Lee, Y.Y.
Lin, E.K. Lai, J.Y. Wu, D.Y.
Lee, M.H. Lee, H.L. Lung,
K.Y. Hsieh and C.Y. Lu,
Macronix Int'l. Corp., Ltd.
(Taiwan)

10:15 P-3-5
Millimeter-Wave
Detector Using Magnetic
Tunnel Junctions
With Perpendicularly
Magnetized L10-Ordered
FePd Free Layer
K. Mukaiyama1, H.
Naganuma1, T. Yu1, H.
Kubota2, A. Fukushima2,
M. Oogane1 and Y. Ando1,
1
Tohoku Univ. and 2AIST(Japan)

10:15 H-3-5
Novel Field Emission
Emitters with Nanoscale
Tips Based on Mo
Oxide Fabricated byElectrochemical Methods
T. Tsukamoto, T. Sato, S.
Kitamura, O. Kubota, A.
Kitao, E. Ozaki and T.
Motoi, Canon INC. (Japan)

10:15 M-3-5
A Robust 600V GaN
HEMT Technology on
GaN-on-Si with 400V,
5μsec Load-Short-Circuit
Withstand Capability
H. Ichijoh1, T. Nagahisa1,
M. Kubo1 and A.O.
Adan2, 1Sharp Corp. and2Consultant (Japan)- 21 -

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-3: Optical
Interconnection

D-3: Nanocarbon-based
DevicesG-3: Dots and Nonstructures

10:30 A-3-6
MEMS Optical
Switches Using Slot
Ring Resonator for Low
Voltage Operation
Y. Amemiya, K. Noda, T.
Sennichi and S. Yokoyam,
Hiroshima Univ. (Japan)

10:15 D-3-6 (Late News)
Direct Evidence ofDefect-defect Correlationin Atomically Thin
MoS2 Layer by Random
Telegraphic Signals
Observed in Back-gatedFETs
N. Fang, K. Nagashio and
A. Toriumi, Univ. of Tokyo(Japan)

10:15 G-3-6
Formation andCharacterization of HighDensity FePt Nanodots on
SiO2 Induced by Remote
Hydrogen
K. Makihara, Y. Kabeya,
A. Ohta, T. Kato, A. Iwata
and S. Miyazaki, Nagoya
Univ. (Japan)

10:30 G-3-7
In Situ TEM Observationof Dynamic Behaviorof Metal-Based
Nanoparticles in Ionic
LiquidK. Kogure, J. Ishioka, K.
Ofuji, R. Mirza, S. Yatsu,
T. Shibayama and S.
Watanabe, Hokkaido Univ.
(Japan)- 22 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108b

H-3: Novel Functional
DevicesP-3: Semiconductor andRF Spintronics

10:30 H-3-6
STDP Behavior
Realization in BiFeO3based Artificial Synapses
with Short and Simplified
Spike Sequences
N. Du1, C. Mayr2, T. You1,
D. Buerger1, I. Skorupa1,3,
M. Di Ventra4, O.G.
Schmidt1,5 and H. Schmidt1,
1
TU Chemnitz, 2 Univ. of
Zurich and ETH Zurich,
3Helmholtz-Zentrum
Dresden-Rossendorf, 4
UCSD and 5IFW Dresden(Germany)

10:30 P-3-6
Generation of Highly
Stable Microwave from a
Spin Torque Oscillator by
Phase Locked Loop
S. Tamaru, H. Kubota, K.
Yakushiji, S. Yuasa and A.
Fukushima, AIST (Japan)- 23 -

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-4: Group-IV Optical
Devices I(15:40-16:55)
Chairs: S. Saito(Univ. ofSouthampton)
Y. Ishikawa(Univ. of Tokyo)

B-4: 2D Materials I(15:40-16:55)
Chairs: T. Machida(Univ. of Tokyo)
K. Terabe (NIMS)

C-4: Organic Devices I(15:40-17:10)
Chairs: T. Hayashi(NTT BRL)
H. Murata (JAIST)

D-4: Nanowire Devices & E-4: MEMS and Sensor
Characterization(15:40-16:55)(15:40-16:55)
Chairs: H. Kanaya
Chairs: G. Zhang(Kyushu Univ.)(NTT BRL)
M. Fujino
K. Kawaguchi(Univ. of Tokyo)(Univ. of Tokyo)

G-4: Growth ofGermanium-based
Semiconductors I(15:40-16:55)
Chairs: T. Suemasu(Univ. of Tsukuba)
N. Watanabe (NTT)

15:40 A-4-1 (Invited)
Ge/SiGe Quantum Well
Optical Modulator
D. Marris Morini1, V.
Vakarin1, P. Chaisakul1,2, J.
Frigerio3, M. Rouifed1, X.
Le Roux1, D. Chrastina3,
L. Vivien1 and G. Isella3,
1
Univ. Paris Sud / IEF, 2
Univ. of Tokyo and 3L-Ness,
Politecnico Di Milano(France)

15:40 B-4-1 (Invited)
Growth and Applicationsof Surface Oxides
on Two-Dimensional
Transition Metal
Dichalcogenides
M. Yamamoto, NIMS
(Japan)

15:40 C-4-1 (Invited)
Development of New
Soft Actuator using
Piezoelectric Polymer
Film
Y. Tajitsu, Kansai Univ.
(Japan)

15:40 D-4-1 (Invited)Template-Assisted
Selective Epitaxy(TASE) of III-V
Nanoscale Devices
for Heterogeneous
Integration with Si
H. Schmid, M. Borg, K.
Moselund, D. Cutaia andH. Riel, IBM Research Zurich (Switzerland)

15:40 E-4-1
Mechanical Properties of
Cu-Ni-Si alloy Evaluatedby Micro-Tensile Test for
Application in MEMS
S. Yanagida1,2, A. Araki1,
T.F.M. Chang1,2, C.Y.
Chen1,2, T. Nagoshi3, E.
Kobayashi1, H. Hosoda1,
T. Sato1 and M. Sone1,2,1Tokyo Tech, 2 JST-CREST
and 3AIST (Japan)

15:40 G-4-1 (Invited)
Crystal Growth of GeSnrelated Group-IV Thin
Films for Integratingon Si Nanoelectronics
Platform
S. Zaima1,2, O. Nakatsuka2,
T. Asano2,3, T. Yamaha2,3,
S. Ike2,3, A. Suzuki2, M.
Kurosawa1,2,4, W. Takeuchi2
and M. Sakashita2,
1
EcoTopia Sci. Inst.,
Nagoya Univ., 2 Grad. Sc.
Eng., Nagoya Univ., 3 JSPS
Reserach Fellow and 4Inst.
Adv. Res., Nagoya Univ.
(Japan)

16:10 A-4-2
Ge/graded-SiGe
Multiplication Layers
for Low-voltage andLow-noise Ge Avalanche
Photodiodes on Si
Y. Miyasaka1, T. Hiraki2,3,
K. Okazaki2,3, K. Takeda2,3,
T. Tsuchizawa2,3, K.
Yamada2,3, K. Wada1 and Y.
Ishikawa1, 1Univ. of Tokyo,
2
NTT Device Tech. Labs.
and 3NTT Nanophotonics
Center (Japan)

16:10 B-4-2
Josephson Coupling in
NbSe2/NbSe2 Van Der
Waals Junction
R. Moriya1, N. Yabuki1,
M. Arai1, Y. Sata1, S.
Morikawa1, S. Masubuchi1
and T. Machida1,2, 1IIS,
Univ. of Tokyo and 2INQIE,
Univ. of Tokyo (Japan)

16:10 C-4-2
Controllable n- to p-type
Doping of MEH-PPV
Films by Evaporative
Spray Deposition using
Ultra-Dilute Solution
MethodN. Mizutani1, S. Sakiyama2
and K. Fujita1,2, 1IMCE,
Kyushu Univ. and 2IGSES
Kyushu Univ. (Japan)

16:10 D-4-2
Highly Tunable Multiple
Quantum Dots Made in
InAs Nanowires by Local
Finger Gates
J. Wang1, S. Huang1, D.
Pan2, J. Zhao2 and H.Q.
Xu1,3, 1Peking Univ., 2 CAS
and 3Lund Univ. (China)

16:00 E-4-2
The CeO2 Sensing
Membrane with NH3
Plasma Treatment in
Biosensor Applications
C.F. Lin, C.H. Kao, S.W.
Chang, C.W. Chang, C.L.
Chang, Y.L. Su and Y.X.
Huang, Chang Gung Univ.
(Taiwan)

16:10 G-4-2
Sn-doped Al-induced
Layer Exchange forLarge-grained GeSn Thin
Films on Insulators
N. Oya, K. Toko and T.
Suemasu, Univ. of Tsukuba(Japan)

16:25 A-4-3
Low Dark Current Ge
Photodetector with
Selectively Grown Si
Capping Layer
S. Okumura, K. Kinoshita,
J. Fujikata, T. Simoyama,
H. Ono, Y. Tanaka, K.
Morito, T. Horikawa and T.
Mogami, PETRA (Japan)

16:25 B-4-3
In Situ and Nonvolatile
Tuning of Sp2/Sp3
Fraction in Graphene
Oxide For All-Solid-State
Multifunctional Devices
T. Tsuchiya, T. Tsuruoka,
K. Terabe and M. Aono,
NIMS (Japan)

16:25 C-4-3
Study of Discharging
Process of Double Layer
Organic Diodes Using
Displacement Current
Measurement Coupledwith Electric-FieldInduced Optical SecondHarmonic Generation
Measurement
T. Noma, D. Taguchi, T.
Manaka and M. Iwamoto,
Tokyo Tech (Japan)

16:25 D-4-3
Growth andCharacterization of
Vertical Nanocavity
Using Core-multishell
Nanowires
T. Wada, S. Hara and J.
Motohisa, Hokkaido Univ.
(Japan)

16:20 E-4-3
Reliability Results of
4 million Micro Bump
Interconnections of
3D Stacked 16 M Pixel
Image Sensor
Y. Takemoto, N. Takazawa,
M. Tsukimura, H. Saito, T.
Kondo, H. Kato, J. Aoki,
K. Kobayashi, S. Suzuki,
Y. Gomi, S. Matsuda and
Y. Tadaki, Olympus Corp.
(Japan)

16:25 G-4-3
Low-Temperature( 〜 150℃ ) SolidPhase Epitaxy of
a-GeSn/c-Ge for High
Non-Equilibrium
Substitutional SnConcentration GeSn
T. Sadoh, A. Ooato, J. Parkand M. Miyao, Kyushu
Univ. (Japan)

16:40 A-4-4
Influences of Metal/Ge
Contact and Surface
Passivation on Light
Emission and Detection
for Asymmetric Metal/
Ge/Metal Diodes
T. Maekura, D. Wang,
K. Yamamoto and H.
Nakashima, Kyushu Univ.
(Japan)

16:40 B-4-4
N-type Doping Effect ofTransferred MoS2 andWSe2 Monolayer
C.P. Lin1, P.S. Liu1, L.S.
Lyu1, M.Y. Li2, C.C.
Cheng1, T.H. Lee1, W.H.
Chang1, L.J. Li3 and T.H.
Hou1, 1NCTU, 2 Academia
Sinica and 3KAUST(Taiwan)

16:40 C-4-4
Realizing Mechanically
Robust ITO and
PEDOT:PSS by Reducing
Substrate Thickness to asThin as 1.4 μm
S. Harimurti1, N.
Matsuhisa1, P. Zalar1,2, T.
Yokota1,2 and T. Someya1,2,
1
Univ. of Tokyo and 2JSTERATO (Japan)

16:40 D-4-4
Study of Heat Conductionin Corrugated Si
Nanowires Using Raman
Mapping
V. Poborchii1, Y. Morita1,
J. Hattori1, T. Tada1 and
P. Geshev2, 1AIST and
2Inst. of Thermophysics of
the Russian Academy of
Sciences (Japan)

16:40 E-4-4 (Late News)
Robustness of Integrated
Stoppers for MEMS
Accelerometer
Fabricated by Multilayered Metal Technology
D. Yamane1,4, T. Konishi2,
M. Takayasu1,4, T. Safu2,
H. Toshiyoshi3,4, M.
Sone1,4, K. Masu1,4 and K.
Machida1,2,4, 1Tokyo Tech,
2
NTT Adv. Tech. Corp., 3
Univ. of Tokyo and 4JSTCREST (Japan)

16:40 G-4-4
Influence of Precursor
Gas on SiGe Epitaxial
Material Quality inTerms of Structural andElectrical Defects
S. Ike1,2,3, E. Simoen3, Y.
Shimura3,4,5, A. Hikavyy3,
W. Vandervorst3,4, R.
Loo3, W. Takeuchi1,
O. Nakatsuka1 and S.
Zaima1,6, 1Nagoya Univ.,
2
JSPS Research Fellow,
3
IMEC, 4 KU Leuven, 5
FWO Pegasus Marie Curie
Fellow and 6EcoTopia
Sci. Inst., Nagoya Univ.
(Japan)- 24 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

K-4: CMOS(15:40-16:50)
Chairs: Y. Fukuzaki(SONY)
K. Sukegawa(SOCIONEXT)

M-4: GaN Power Devices(15:40-16:55)
Chairs: T. Tanaka(Panasonic)
T. Uesugi(Toyota Central
R&D Labs.)

N-4: Interface andMaterial Science(15:40-17:00)
Chairs: S. Yoshida (SONY)
K. Kakushima(Tokyo Tech)

O-4: Advanced
Processing Circuits with
Functional Materials(15:40-17:10)
Chairs: R. Kuroda(Tohoku Univ.)
K. Ito(Tohoku Univ.)

15:40 K-4-1 (Invited)High Performance 14nm
SOI FinFET Technology
C.-H. Lin, IBM T.J. Watson
Research Center (USA)

15:40 M-4-1 (Invited)
Vertical Power Electronic
Devices based on
Bulk Gallium Nitride
Substrates
I.C. Kizilyalli and O.
Aktas, Avogy Inc. (USA)

15:40 N-4-1
Beyond GeO2 on Ge:
Network Modificationof GeO2 for Reliable Ge
Gate Stacks
C. Lu, C.H. Lee, T.
Nishimura and A. Toriumi,
Univ. of Tokyo (Japan)

15:40 O-4-1 (Invited)
Spintronics Memory
Devices for Ultralowpower and Highperformance Integrated
Circuits
S. Fukami, H. Sato and
H. Ohno, Tohoku Univ.
(Japan)

16:10 K-4-2
Stacked-Nanowire and
FinFET Transistors:
Guidelines for the 7nm
Node
L. Gaben1, S. Barraud2,
M.A. Jaud2, S. Martinie2,
O. Rozeau2, J. Lacord2,
G. Hiblot1, S. Monfray1,
F. Boeuf1, T. Skotnicki1, F.
Balestra3 and M. Vinet2,
1
STMicroelectronics, 2
CEA-LETI and 3IMEPLAHC (France)

16:10 M-4-2
Embedded Source
Field-Plate for Reduced
Parasitic Capacitance of
AlN/GaN MIS-HEMTs
on Si Substrate
K. Chikamatsu, M. Akutsu,
T. Tanaka, S. Takado, K.
Sakamoto, N. Ito and K.
Nakahara, ROHM Co.,
Ltd. (Japan)

16:00 N-4-2
Understanding on the
Impact of Interface
Reactions on Dipole
Strengths at MgO/SiO2
and Y2O3/SiO2 Interfaces
J. Fei and K. Kita, Univ. ofTokyo (Japan)

16:10 O-4-2
A 600-μW Ultra-LowPower Associative
Processor for Image
Pattern Recognition
Employing Magnetic
Tunnel Junction (MTJ)
Based Nonvolatile
Memories with NovelIntelligent Power-Gating(IPG) Scheme
Y. Ma, S. Miura, H. Honjo,
S. Ikeda, T. Hanyu, H.
Ohno, T. Shibata and
T. Endoh, Tohoku Univ.
(Japan)

16:30 K-4-3
W and CopperInterconnection Stability
for 3D VLSI CoolCube
Integration
C. Fenouillet Beranger1,
S. Kerdiles1, F. Deprat1,3,
P. Batude1, M.P. Samson2,1,
B. Previtali1, N. Rambal1,2,
V. Lapras1,2, L. Emery2,
C. Euvrard Colnat1, A.
Seignard1,2, P. Besson2,1, R.
Kachtouli1, A. Roman2,1,
C. Ribiere1, V. Lu2,1, L.
Brunet1, E. Gourvest2,
G. Druais2, Y. Loquet2,
L. Arnaud1, Y. Le Friec2,O. Pollet1, V. Benevent1,
F. Aussenac1, H. Denis1,
V. Jousseaume1, S.
Maitrejean1 and M.
Vinet1, 1CEA-LETI, 2
STMicroelectronics and3
IMEP-LAHC (France)

16:25 M-4-3
Analysis of GaN-HEMT
Switching Characteristics
for High-Power
Applications
T. Mizoguchi1, T. Naka1,
Y. Tanimoto2, Y. Okada2,
W. Saito1, M. Miura
Mattausch2 and H.J.
Mattausch2, 1Toshiba Corp.
and 2Hiroshima Univ.
(Japan)

16:20 N-4-3
Positive and Negative
Dipole Layer Formation
at High-k/SiO2 Interfaces
Simulated by ClassicalMolecular Dynamics
K. Shimura1, R. Kunugi1,
A. Ogura2,5, S. Satoh3,5,
J. Fei4, K. Kita4 and T.
Watanabe1,5, 1Waseda
Univ., 2 Meiji Univ., 3 Univ.
of Hyogo, 4 Univ. of Tokyoand 5JST-CREST (Japan)

16:30 O-4-3
180-mV Subthreshold
Operation of Crystalline
Oxide Semiconductor
FPGA Realizedby Overdriving
Programmable
Power Switch andProgrammable Routing
SwitchM. Kozuma1, Y. Okamoto1,
T. Nakagawa1, T. Aoki1,
Y. Kurokawa1, T. Ikeda1,
Y. Ieda1, N. Yamade1, H.
Miyairi1, M. Ikeda2, M.
Fujita2 and S. Yamazaki1,
1
Semiconductor Energy
Lab. Co., Ltd. and 2Univ.
of Tokyo (Japan)

16:40 M-4-4
Effect of Drain
Conductance in
Equivalent Circuit
Model for GaN GIT
Bidirectional Switch
T. Ide1, M. Shimizu1,
X.Q. Shen1, T. Morita2,
N. Otsuka2 and T. Ueda2,
1
AIST and 2Panasonic
Corp. (Japan)

16:40 N-4-4
Thermodynamic Knobfor High Performance
SiGe Gate Stack
Formation
C.T. Chang, T. Nishimura
and A. Toriumi, Univ. ofTokyo (Japan)

16:50 O-4-4
Area-Efficient Nonvolatile Carry Chain
Based on Pass-Transistor/
Atom-Switch Hybrid
Logic
X. Bai, Y. Tsuji, A.
Morioka, M. Miyamura,T. Sakamoto, M. Tada, N.
Banno, K. Okamoto, N.
Iguchi and H. Hada, NEC
Corp. (Japan)- 25 -

1F 108b

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

C-4: Organic Devices I
16:55 C-4-5
Enhanced Performancein Organic Light-emitting
Diode by Surface
Modification of ITO with
Graphene Oxide
D. Yamaguchi1, H. Sakai1and H. Murata1, JAIST(Japan)- 26 -

1F 107a1F 107b

1F 108aTuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204- 27 -

2F 206

2F 207

1F 108b

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-5: Group-IV Optical
Devices II(17:25-18:40)
Chairs: Y. Ishikawa(Univ. of Tokyo)
S. Saito(Univ. ofSouthampton)

B-5: 2D Materials II(17:25-18:40)
Chairs: H. Miyazaki(Toshiba)
S. Sato(Fujitsu Labs.)

C-5: New Concepts(17:25-18:25)
Chairs: H. Suzuki(Univ. of Miyazaki)
Y. Kurokawa(Nagoya Univ.)

F-5: Nano Devices for
Chemical & Biosensing(17:25-18:40)
Chairs: T. Sakata(Univ. of Tokyo)
H.-M. Chen
(NCTU)

G-5: Growth ofGermanium-based
Semiconductors II(17:25-18:40)
Chairs: A. Kikuchi(Sophia Univ.)
Y. Hotta(Univ. of Hyogo)

17:25 A-5-1
Tensile Strain ofGermanium Micro-Disks
on Freestanding SiO2
Beams
A. Alattili1, S. Kako2, M.
Husain1, F. Gardes1, S.
Iwamoto2, Y. Arakawa2
and S. Saito1, 1Univ. ofSouthampton and 2Univ. ofTokyo (UK)

17:25 B-5-1 (Invited)
Transport Studies in
Graphene and Black
Phosphorus Field EffectTransistors
B. Özyilmaz, NUS(Singapore)

17:25 C-5-1 (Invited)
A New Concept of Solar
Energy Harvesting
Using Solar-Pumped
Lasers Coupled with
Monochromatic
Photovoltaics
S. Mizuno1, K. Hasegawa1,
T. Ichikawa1 and H. Ito2,
1
Toyota CRDL, Inc. and2
Nagoya Univ. (Japan)

17:25 F-5-1 (Invited)
Acquiring Biological
Information ofIndividuals Using
Quantum Mechanics
M. Taniguchi, Osaka Univ.
(Japan)

17:25 G-5-1
High Quality GeSn Layer
Formation Due to Wellcontrolled Sn Migration
at High Temperature
N. Taoka1, G. Capellini1,2,
P. Zaumseil1, I. Costina1,
M.A. Schubert1 and T.
Schroeder1,3, 1IHP, 2 Univ.
Roma Tre and 3BTU
(Germany)

17:40 A-5-2
Suspended Ge Crossshaped Microstructures
for Enhancing Biaxial
Tensile Strain
S. Ishida1, S. Kako1, K.
Oda2, T. Ido2, S. Iwamoto1
and Y. Arakawa1, 1Univ.
of Tokyo and 2Hitachi Ltd.
(Japan)

17:55 B-5-2
Band-to-Band Graphene
Resonant Tunneling Field
Effect Transistor
S. Suzuki1, M.
Muruganathan1, S. Oda2and H. Mizuta1,3, 1JAIST, 2
Tokyo Tech and 3Univ. ofSouthampton (Japan)

17:55 C-5-2
Surface Passivation
Studies on Vertical
Junction Silicon
Microwire Solar Cells
Y.G. Ro1, R. Chen1 and S.A.
Dayeh1, Univ. of California
San Diego (USA)

17:55 F-5-2
Vertical Nano-Junction
Organic Diode as
Sensitive Sensing Array
M.Y. Chuang1, J.N. Chen2,
H.W. Zan1 and C.J. Lu3,
1
NCTU, 2 National Tsing
Hua Univ. and 3National
Taiwan Normal Univ.
(Taiwan)

17:40 G-5-2
Heavily Ga-doped
Germanium-Tin Alloys
by Molecular Beam
Epitaxy
W. Wang, V.R. D' Costa,
S.L. Lim, Q. Zhou, E.S.
Tok and Y.C. Yeo, NUS(Singapore)

17:55 A-5-3
Crystallinity
Improvement of Ge
Waveguides Fabricatedby Epitaxial Lateral
Overgrowth andChemical Mechanical
Polishing
K. Oda1, T. Okumura1,
J. Kasai1, S. Kako2, S.
Iwamoto2 and Y. Arakawa2,
1
Hitachi Ltd. and 2Univ. ofTokyo (Japan)

18:10 B-5-3
Influence of Local
Electric Field on
Electronic States ofGraphene Nanoribbons
A. Yamanaka and S.
Okada, Univ. of Tsukuba(Japan)

18:10 C-5-3
Photo-Assisted
Impedance Spectroscopy
for Quantum Dot Solar
Cell
T. Hoshii1, S. Naitoh1 andY. Okada1, Univ. of Tokyo(Japan)

18:10 F-5-3
Ammonia Gas Sensor
Based on Surface
Modified Poly-Si
Nanowires Field EffectTransistor
J.S. Hsu and H.M.P. Chen,
NCTU (Taiwan)

17:55 G-5-3
Thermally-Stable HighSn Concentration ( 〜9%) GeSn on Insulator by
Ultra-Low Temperature( 〜 180℃ ) Solid-Phase
Crystallization Triggeredby Laser-Anneal Seeding
R. Matsumura1,2, K. Moto1,
Y. Kai1, T. Sadoh1, H.
Ikenoue1 and M. Miyao1,
1
Kyushu Univ and 2JSPS
Research Fellow (Japan)

18:10 A-5-4
Temperature Dependent
Electroluminescencefrom GeSn
Heterojunction Light
Emitting Diode on Si
Substrate
C. Chang, H. Li, S.H.
Huang and H.H. Cheng,
National Taiwan Univ.
(Taiwan)

18:25 B-5-4
Back Gate BiasTemperature Instability
in Single-Layer DoubleGated Graphene FieldEffect Transistors
Y.Y. Illarionov1,2, M. Waltl1,
A.D. Smith3, S. Vaziri3, M.
Ostling3, M. Lemme4 and
T. Grasser1, 1TU Wien,
2
Ioffe Physical-Techn.
Inst., 3 KTH Royal Inst. of
Tech. and 4Univ. of Siegen(Austria)

18:25 F-5-4
Biosensing by Differential
Si Ring Resonators
Robust to Process
Variations
T. Taniguchi, S. Yokoyama,
Y. Amemiya, T. Ikeda, A.
Kuroda and S. Yokoyama,
Hiroshima Univ. (Japan)

18:10 G-5-4
Au Induced Low
Temperature Formationof (111) Preferential
Oriented Crystalline Ge
on Insulator
H. Okamoto, K. Kudo, T.
Nomitsu, K. Takakura and
I. Tsunoda, Kumamoto
College (Japan)

18:25 A-5-5
Sharp and Intense Sivacancy Center Emission
from Diamond Cube
Selective-grown on Si(100) Substrate
H. Isshiki, K. Komiya
and R. Kojima, Univ. ofElectro-Communications(Japan)

18:25 G-5-5
Enhancement of
Au Induced Lateral
Crystallization inElectron IrradiatedAmorphous Ge on SiO2
K. Moto1, S. Sakiyama1,
H. Okamoto1, H. Hara2,
H. Nishimura2, K.
Takakura1 and I. Tsunoda1,
1
Kumamoto College and2
Bruker BioSpin K.K.
(Japan)- 28 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

K-5: Noise(17:25-18:25)
Chairs: F.-L. Yang
(Academia Sinica)
K. Kokubun(Toshiba)

M-5: Novel Widegap
Devices(17:25-18:40)
Chairs: C.-F. Huang(National Tsing
Hua Univ.)
N. Hara(Fujitsu Labs.)

N-5: Gate Stack
Characterization(17:25-18:55)
Chairs: H. Nohira(Tokyo City Univ.)
G. Nakamura(Tokyo Electron)

O-5: MRAM andSpintronics Logic(17:25-18:55)
Chairs: K. Ito(Tohoku Univ.)
H. Saito(Fujitsu Semicon.)

17:25 K-5-1
Transistor-level
Characterization of
SRAM Bit Failures
Induced by Random
Telegraph Noise
T. Mizutani, T. Saraya, K.
Takeuchi, M. Kobayashi
and T. Hiramoto, Univ. ofTokyo (Japan)

17:25 M-5-1 (Invited)Diamond Electronics
for Power Devices andSensing Applications
M. Hatano1,2, T. Iwasaki1,2
and S. Yamasaki2,3, 1Tokyo
Tech, 2 JST-CREST and
3
AIST (Japan)

17:25 N-5-1 (Invited)Engineering high-k/
InGaAs Interface for
Extremely Scaled Gate
StacksD. H. Zadeh1, H. Oomine2,
K. Kakushima2 and H.
Iwai2, 1NTT Device Tech.
Labs. and 2Tokyo Tech
(Japan)

17:25 O-5-1 (Invited)
Harvesting the Physics ofSpin and Magnetism for
Low Power Logic
I. Young, S. Manipatruni
and D. Nikonov, Intel
Corp. (USA )17:45 K-5-2
1⁄f Noise in Submicron
Top-Gate Crystalline
Oxide Semiconductor
FET
A. Hirose, T. Aoki, S.
Maeda, F. Akasawa, Y.
Kurokawa, T. Ikeda, M.
Tsubuku, T. Ishihara,
Y. Kobayashi and S.
Yamazaki, Semiconductor
Energy Lab. Co. Ltd.
(Japan)

17:55 M-5-2
High Voltage Diamond
MESFET with VBR >1.5kV
H. Umezawa1,2,3, T.
Matsumoto1, S. Ohmagari1,
Y. Kato1 and Y. Mokuno1,
1
AIST, 2 Univ. Grenoble
Alpes, Inst. Neel and3
CNRS, Inst. Neel (Japan)

17:55 N-5-2
Impact of La2O3Interfacial Layers on
InGaAs MOS Interface
Properties in ALD Al2O3/
La2O3/InGaAs Gate
StacksC.Y. Chang1,2, M.
Takenaka1,2 and S.
Takagi1,2, 1Univ. of Tokyoand 2JST-CREST (Japan)

17:55 O-5-2
10 nm p-MTJ Array
Design for Suppressing
Switching Delay Induced
by Interference Dueto Magnetic Dipole
Interaction for HighDensity STT-MRAM
S. Ohuchida1,3, K. Ito2,
M. Muraguchi1,2,3 and T.
Endoh1,2,3, 1Tohoku Univ.,
2
CIES, Tohoku Univ. and
3
JST-ACCEL (Japan)

18:05 K-5-3
Using Sub-microsecond
Measurement to Monitor
AC NBTI and Dividing
Trap Types into NIT,NHT and NFT through
Adjustable Stress
Frequency and Measure
Frequency
C.H. Chiang, N. Ke, S.N.
Kuo, A. Juan and K.C. Su,
UMC (Taiwan)

18:10 M-5-3
1.7 KV Breakdown C-H
Diamond MOSFETs
with High Drain Current
Density
Y. Kitabayashi, T. Yamada,
D. Xu, T. Saito, D.
Matsumura, A. Hiraiwa
and H. Kawarada, Waseda
Univ. (Japan)

18:15 N-5-3
First Demonstration of
300mm InGaAs-OnInsulator Substrates
Fabricated using the
Smart CutTM Technology
J. Widiez1,2, S. Sollier1,2,
T. Baron1,3, M. Martin1,3,
G. Gaudin4, F. Mazen1,2,
F. Madeira1,2, S. Favier1,2,
A. Salaun1,2, S. Arnaud1,3,
S. David1,3, E. Beche1,2, H.
Grampeix1,2, C. Veytizou4,
D. Delprat4 and T.
Signamarcheix1,2, 1Univ.
Grenoble Alpes, 2 CEALETI, 3 CNRS-LTM and
4
SOITEC (France)

18:15 O-5-3
Universal Damage
Recovery Scheme using
the Oxygen Showering
Post-treatment (OSP)
Process for Sub-20nm
High Density STTMRAM Devices
J.H. Jeong1, 2 and T.
Endoh1, 3, 4, 1Tohoku Univ.,
2
Samsung Electronics Co.
Ltd, 3 CIES, Tohoku Univ.
and 4JST-ACCEL, Tohoku
Univ. (Japan)

18:25 M-5-4
First Demonstration of
β-Ga2O3 Schottky Barrier
Diode with Field Plate
Edge Termination
K. Sasaki1,2, M.
Higashiwaki2, K. Goto1, K.
Nomura3, Q.T. Thieu3, R.
Togashi3, H. Murakami3, Y.
Kumagai3, B. Monemar3,4,
A. Koukitu3, A. Kuramata1
and S. Yamakoshi1,
1
Tamura Corp., 2 NICT, 3
Tokyo Univ. of Agri. &Tech. and 4Linköping Univ.
(Japan)

18:35 N-5-4
High Mobility
N-MOSFETs on GeSn
Film Formed by Solid
Phase Epitaxy with
Surface Passivation
by Oxygen Plasma
Treatment
Y.H. Wu, C.C. Su, Y.C.
Fang and C.H. Hsieh,
National Tsing Hua Univ.
(Taiwan)

18:35 O-5-4
Optimization of CoFeB
Capping Layer Thickness
for Characterization of
Leakage Spot in MgOTunneling Barrierof Magnetic Tunnel
Junction
S. Sato1,6, H. Honjo1,6, S.
Ikeda1,2,3,6, H. Ohno1,2,3,4, T.
Endoh1,2,5,6 and M. Niwa1,6,
1
CIES, Tohoku Univ., 2
CSIS, Tohoku Univ., 3
RIEC, Tohoku Univ., 4
WPI-AIMR, Tohoku Univ.,
5
Tohoku Univ. and 6JSTACCEL (Japan)- 29 -

1F 108b

Tuesday, September 29
POSTER SESSION (13:30-15:30, Main Hall A, B)

PS-1-16Comprehensive Characterization of Generated Trap Sites in Gate Insulator using Advanced
Stress-induced Leakage Current Simulator
Y. Higashi, J. Chen and T. Ishihara, Toshiba Corp. (Japan)

All poster presenters must give the short oral presentations in Short Presentation Session
scheduled on September 29, 11:00 - 12:00.
Each Area Session Room; see page 46.
Area 1: Advanced LSI Processing & Materials Science

PS-1-17First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal
Oxidation
S. Kawachi1, H. Hiroki1, M. Araidai1, H. Kageshima2,4, T. Endoh3,4 and K. Shiraishi1,4, 1Nagoya
Univ., 2 Shimane Univ., 3 Tohoku Univ. and 4JST-ACCEL (Japan)(20 papers)

PS-1-1Low Interface Trap Density in In0.53Ga0.47as Metal-Oxide-Semiconductor Capacitors with
Molecular Beam Deposited HfO2/ La2O3 High-κ Dielectrics
T.W. Lin1, J.N. Yao1, Y.C. Lin1, K.C. Yang1, W.H. Wu1, K. Kakushima2, J.S. Maa1, E.Y. Chang1 andH. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)

PS-1-18
Angle-resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on
4H-SiC (0001)
H. Arai and H. Nohira, Tokyo City Univ. (Japan)

PS-1-2
Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of
HfO2/In0.53Ga0.47As MOSCAPs for Low EOT and Low Interface State Density
Q.H. Luc, H.B. Do, S.P. Cheng, J.H. Chen, S.H. Huynh, P.C. Chang, Y.C. Lin and E.Y. Chang,
NCTU (Taiwan)

PS-1-19 (Late News)
Investigation and Comparison of Quantum-Capacitance Induced Inversion-Charge Loss for
Ultra-Thin-Body and Double-Gate III-V n-MOSFETs
S.L. Shen, H.H. Shen, C.H. Yu and P. Su, NCTU (Taiwan)

PS-1-3
Improving Performance of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors
using in situ Post Remote-Plasma Treatment with N2/H2 Gases
Q.H. Luc, S.P. Cheng, J.H. Chen, G.Y. Lin, H.B. Do, P.C. Chang, G.W. Huang, K.M. Chen, Y.C. Lin
and E.Y. Chang, NCTU (Taiwan)

PS-1-20 (Late News)New Structural Properties of Ferroelectric Y2O3-doped HfO2 Films Probed by Microscopic
Raman Spectroscopy Measurements
K. Izukashi1,2, T. Nishimura1,2, S. Migita2,3 and A. Toriumi1,2, 1Univ. of Tokyo, 2 AIST and 3JSTCREST (Japan)

PS-1-4
Improved Interface of HfO2/InGaAs MOS by Employing Thin SiNx Interfacial Layer using
Plasma Enhanced Atomic Layer Deposition
S.K. Eom1, R.S. Ki1, D.H. Kim1, H.Y. Cha2 and K.S. Seo1, 1Seoul National Univ. and 2Hongik Univ.
(Korea)Area 2: Interconnect Technologies and 3D Integration/ Sensor/ MEMS Integration/
Materials and Characterization(18 papers)

PS-2-1
Mechanical Properties of Electrodeposited Gold for MEMS Device
M. Yoshiba1,2, C.Y. Chen1,2, T.F.M. Chang1,2, D. Yamane1,2, K. Machida1,2,3, K. Masu1,2 and M.
Sone1,2, 1Tokyo Tech, 2 JST-CREST and 3NTT AT (Japan)

PS-1-5Sub-0.2V Switching Voltage of Negative Capacitance Double Gate Tunnel FET using
Ferroelectric Gate
M.H. Lee1, C. Liu1, P.G. Cheng1, C.C. Cheng1, K.Y. Chu1, M.J. Xie1, S.N. Liu1, J.W. Lee1, S.J.
Huang1 and M.H. Liao2, 1National Taiwan Normal Univ. and 2National Taiwan Univ. (Taiwan)

PS-2-2
Proposal of a Simple MEMS Phase Shifter Based on Effective Dielectric Constant
Modulation
D. Nakano1, M. Mori1, K. Maezawa1, H. Ishii2 and H. Ando3, 1Univ. of Toyama, 2 Toyohashi Univ. of
Tech. and 3National Inst. of Tech., Toyota College (Japan)

PS-1-6Fabrication of Low-Temperature (< 400 °C) Germanium MOSCAPs by Microwave Thermal
Oxidation
W.C. Chi1, C.C. Hsu1,2, C.H. Chou1, A.S. Shih1, Y.J. Lee2 and C.H. Chien1, 1NCTU and 2NDL,
NARLabs (Taiwan)

PS-2-3
Study on Ti/Au Two-Layered Cantilevers with Different Aspect Ratio for MEMS Devices
M. Teranishi1,2, T.F.M. Chang1,2, C.Y. Chen1,2, T. Konishi3, K. Machida1,2,3, H. Toshiyoshi1,4, D.
Yamane1,2, K. Masu1,2 and M. Sone1,2, 1JST-CREST, 2 Tokyo Tech, 3 NTT AT and 4Univ. of Tokyo(Japan)PS-1-7High-Performance P-Channel Polycrystalline-Germanium Thin Film Transistors via
Excimer Laser Crystallization and Counter Doping
C.Y. Liao, C.Y. Huang, M.H. Huang, C.H. Chou and H.C. Cheng, NCTU (Taiwan)

PS-2-4Micro-Texture Dependence of the Strength of Electroplated Copper Fine Bumps Used for
3-Dimensonal Integration
M. Gotoh, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-1-8UV Raman and Multiwavelength Photoluminescence Characterization of Ion Implanted
Silicon for In-Line Dopant Activation Process Monitoring Applications
W.S. Yoo 1, T. Ishigaki 1, T. Ueda 1, K. Kang 1, N. Hasuike 2, H. Harima 2 and M. Yoshimoto 2,
1
WaferMasters, Inc. and 2KIT (USA)PS-2-5
Local Stress Effect Due to Operation-Heating-Induced Adhesive Expansion on Transistor
Performances in 3D IC
H. Kino, H. Hashiguchi, S. Tanikawa, Y. Sugawara, S. Ikegaya, T. Fukusima, M. Koyanagi and T.
Tanaka, Tohoku Univ. (Japan)

PS-1-9Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type
Ge1-xSnx Epitaxial Layer
J. Jeon1, T. Asano1,2, W. Takeuchi1, M. Kurosawa1,3, O. Nakatsuka1 and S. Zaima1,3, 1Nagoya Univ., 2
JSPS Research Fellow and 3EcoTopia Sci. Inst., Nagoya Univ. (Japan)

PS-2-6
Combined Surface-Activated Bonding Technique for Low-Temperature Hydrophilic Wafer
Bonding with Interfacial Water Management
R. He1, M. Fujino1, A. Yamauchi2 and T. Suga1, 1Univ. of Tokyo and 2Bondtech Co., Ltd. (Japan)

PS-1-10n+Si/pGe Cross Heterojunctions Fabricated by Narrow Membrane Bonding
T.C. Liu1,2, S. Kabuyanagi1,2, T. Nishimura1,2 and A. Toriumi1,2, 1Univ. of Tokyo and 2JST-CREST(Japan)PS-2-7
Transient Liquid-Phase Sintering using Tin and Silver Powder Mixture for Die Bonding
M. Fujino1, H. Narusawa1, Y. Kuramochi1, E. Higurashi1, T. Suga1, T. Shiratori2 and M. Mizukoshi3,
1
Univ. of Tokyo, 2 ALPHA DESIGN CO., LTD. and 3SYNDEO (Japan)

PS-1-11
PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic ResistanceS. Tanaka, Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang and H. Nakashima, Kyushu Univ.
(Japan)PS-2-8A Novel Hybrid Strategy of via-first Bare TSVs for Enhanced Signal Integrity in 3-D
Integrated Systems
R. Fang1, X. Sun1, M. Miao2 and Y. Jin1, 1Peking Univ. and 2Beijing Info. Sci.&Tech. Univ. (China)

PS-1-12Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at
Metal/n-Ge Interface
A. Suzuki1, O. Nakatsuka1, S. Shibayama1,2, M. Sakashita1, W. Takeuchi1, M. Kurosawa1,3 and S.
Zaima1,3, 1Nagoya Univ., 2 JSPS Research Fellow and 3EcoTopia Sci. Inst., Nagoya Univ. (Japan)

PS-2-9
Capacitance Characteristics of Low-k Low-Cost CVD Grown Polyimide Liner for HighDensity Cu-TSVs in 3D-LSI
M. Murugesan, J.C. Bea, T. Fukushima, H. Hashimoto, K.W. Lee and M. Koyanagi, Tohoku Univ.
(Japan)PS-1-13
Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs
Y. Morita, T. Mori, K. Fukuda, W. Mizubayashi, S. Migita, K. Endo, S. O'uchi, Y.X. Liu, M.
Masahara, T. Matsukawa and H. Ota, AIST (Japan)

PS-2-10
Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High
Aspect Ratio TSVs
S. Yang1, W. Cheng1, H. Wu1, C. Song1,2 and W. Zhang1,2, 1NCAP China and 2IMECAS (China)

PS-1-14
Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI
T. Nishimura, T. Nakamura, T. Yajima and A. Toriumi, Univ. of Tokyo (Japan)

PS-2-11
Thermal Mechanical Behavior of TSVs with WN/Ni as Barrier/Seed Layer System for 2.5D
Integration
X.M. Jing, NCAP China (China)

PS-1-15
Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated
Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator
M. Akazawa, S. Takeshima, A. Nakagawa, K. Hiramatsu and S. Higashi, Hiroshima Univ. (Japan)- 30 -

Tuesday, September 29
PS-2-12
Electroless Nickel Barrier/Seed Layer Deposition on Dielectric Liners for Advanced Cu-TSV
Applications
T. Fukushima1, K. Taniguchi2, S. Watariguchi2, M. Murugesan1, C. Nagai1, A. Nakamura1, H.
Hiroyuki1, J. Bea1, T. Tanaka1, M. Koyanagi1 and K. Lee1, 1Tohoku Univ. and 2Meltex Inc. (Japan)

PS-3-10Impacts of Threshold Voltage Design for Monolithic 3D 6T SRAM with Si and InGaAs-n/Ge-p Devices considering Interlayer Coupling
K.C. Yu, C.H. Yu, V.P.H. Hu, P. Su and C.T. Chuang, NCTU (Taiwan)
PS-3-11Multi-Threshold Voltages in Ultra-thin-body Devices by Asymmetric Dual-Gate Structure
H. Kim, J. Park, M.W. Kwon, S. Hwang and B.G. Park, Seoul National Univ. (Korea)

PS-2-13
A Novel Low Temperature (<500°C) and Low-κ (3.8) Boron Nitride PECVD Offset Spacer
Featuring 3D VLSI Integration
C.M.V. Lu1,2, C. Bout1, C. Fenouillet Beranger1, A. Roule1, M.P. Samson1,2, B. Previtali1, C. Arvet1,2,
A. Michallet1,2, N. Rochat1, S. Favier1,2, R. Kachtouli1, V. Loup1, P. Besson1,2, M. Garcia Barros1,2,
N. Posseme1, F. Pierre1, P. Maury2, D. Benoit2, P. Batude1, M. Vinet1 and T. Skotnicki2, 1CEA-LETI
and 2STMicroelectronics (France)

PS-3-12Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy andConcentration Ion Implantation on Random Telegraph Noise
T.H. Kao1, S.J. Chang1, Y.K. Fang1, P.C. Huang1, Y.K. Su1, Y.J. Shen1, C.Y. Wu2 and S.L. Wu2,
1
NCKU and 2Cheng Shiu Univ. (Taiwan)

PS-2-14
Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in
Integrated Passive Devices (IPD) Technology
Y.C. Chang1,2, P.Y. Wang1, S.H. Hsu1, Y.T. Chang3, C.K. Chen3 and D.C. Chang2, 1National Tsing
Hua Univ., 2 CIC, NARLabs and 3BSMI, MOEA (Taiwan)

PS-3-13
The Limits of Applicability of the Analytic Model for Hot Carrier Degradation
M. Jech1, P. Sharma1, S. Tyaginov1,2, F. Rudolf1 and T. Grasser1, 1TU Wien and 2Ioffe PhysicalTechn. Inst. (Austria)

PS-2-15
Preparation of High Performance SiNX Films Deposited by Reactive Sputtering and PECVD
at Low Temperatures
M. Sato1, M.B. Takeyama1, Y. Nakata2, Y. Kobayashi2, T. Nakamura2 and A. Noya1, 1Kitami Inst. of
Tech. and 2Fujitsu Labs. Ltd. (Japan)

PS-3-14
Investigation of Backgating Effect on Superlinear Onset of Output Characteristics for UTB
III-V Heterojunction Tunnel FET
S.E. Huang, M.L. Fan and P. Su, NCTU (Taiwan)
PS-3-15
Optimized Nanowire Diameter for III-V Homojunction and Heterojunction Gate-All-Around
Tunnel FETs
Y.W. Wang and P. Su, NCTU (Taiwan)

PS-2-16
In Situ FTIR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic
Acid Treatment with Pt Catalysts
P.W. Chou1, C.C. Kuo1, J.Y. Lin2 and J.M. Song1, 1National Chung Hsing Univ. and 2ITRI (Taiwan)

PS-3-16
Transmission Line Model and Transconductance Method for Layout Dependent Source
Resistance Extraction in Multi-Finger MOSFETs
Y.Z. Lo and J.C. Guo, NCTU (Taiwan)

PS-2-17
Measurement of the Strength at Grain Boundaries in Electroplated Copper Thin-Film
Interconnections
T. Nakanishi, T. Kato, Y. Ichikawa, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-3-17Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky
Source/Drain
Y.B. Zhang, L. Sun, H. Xu and J.W. Han, Peking Univ. (China)

PS-2-18 (Late News)
Radio Frequency Characteristics in Tantalum Nitride Thin Film Resistor
S.H. Kwon1, M. Nam1, A. Kim1, K. Kang1, S.J. Chae1, S.J. Lee1, W.S. Sul2 and S.G. Pyo1, 1ChungAng Univ. and 2NNFC (Korea)
Area 3: CMOS Devices / Device Physics

Area 4: Advanced Memory Technology(17 papers)(13 papers)

PS-4-1Si-based Nonvolatile Field Effect Transistor using Low Temperature Process
Y. Miyata, A. Ashida, T. Yoshimura and N. Fujimura, Osaka Prefecture Univ. (Japan)

PS-3-1Discrete Dopant Impact on the 7 nm Nanowire Transistor Performance
X. Wang1, Y. Wang2, C. Riddet3, E. Towie3, B. Cheng3, X. Liu2 and A. Asenov1,3, 1Univ. of Glasgow, 2Peking Univ. and 3Gold Standard Simulations Ltd. (UK)

PS-4-2
Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beamand Its Mechanism Investigated by First-Principles Calculation
T. Kubota1, Y. Kikuchi1,2, T. Nozawa2 and S. Samukawa1,3, 1IFS, Tohoku Univ., 2 Tokyo Electron Ltd.
and 3WPI-AIMR, Tohoku Univ. (Japan)

PS-3-2
Proposal of Tunneling and Diffusion Current Hybrid MOSFET
K. Furukawa, R. Kuroda, T. Suwa, K. Hashimoto, A. Teramoto and S. Sugawa, Tohoku Univ.
(Japan)PS-4-3A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising
Crystalline In-Ga-Zn Oxide FET
T. Matsuzaki, T. Onuki, S. Nagatsuka, H. Inoue, T. Ishizu, Y. Ieda, N. Yamade, H. Miyairi,
M. Sakakura, Y. Shionoiri, K. Kato, T. Okuda, J. Koyama, Y. Yamamoto and S. Yamazaki,
Semiconductor Energy Lab. Corp. Ltd. (Japan)

PS-3-3
RF Characteristics of Poly-Si TFTs with HfO2 Gate Dielectric Fabricated by Microwave
Annealing
J.J. Tsai and H.H. Hu, National Taipei Univ. of Tech. (Taiwan)
PS-3-4Trap-Assisted Tunneling Effects on Gate-Induced Drain Leakage in Silicon-Germanium
Channel pFET
V.A. Tiwari1, A. Scholze2, R. Divakaruni2 and D.R. Nair1, 1Indian Inst. of Tech. Madras and 2IBM
SRDC (India)

PS-4-4High-performance In-Ga-Zn-O TFT Memory with Pt Nanocrystals
S.B. Qian, W.P. Zhang, W.J. Liu and S.J. Ding, Fudan Univ. (China)
PS-4-5
Resistance Switching Memory Operation of CaF2/Si/CaF2 Resonant-tunneling Quantum-well
Structures using Nanocrystalline-Si Secondary Barrier Layers
K. Suda, Y. Kuwata and M. Watanabe, Tokyo Tech (Japan)

PS-3-5
Low Frequency Noise and Mobility Correlation from RT to Low Temperatures for n-Channel
Ge MOSFETs
S. Ghosh, P. Bhatt, Y. Tiwari and S. Lodha, IIT Bombay (India)

PS-4-6
Switching Kinetics of VCM-based Memristor: Evolution and Positioning of Nanofilament
J.Y. Chen, C.W. Huang, C.H. Chiu, Y.T. Huang and W.W. Wu, NCTU (Taiwan)

PS-3-6Comparison of Gate Structures of P-channel Poly-Si Nanowire Trench Ultra-thin Channel
Juntionless Field-Effect Transistors
Y.C. Wu1, K.W. Lin1, M.S. Yeh1, Y.R. Lin1, M.H. Wu1 and Y.H. Lin2, 1National Tsing Hua Univ. and2
National United Univ. (Taiwan)

PS-4-7
Impact of Film Morphology on the Switching Characteristics of Ta 2O 5-Based Atomic
Switches
C. Mannequin1, T. Tsuruoka1, T. Hasegawa2 and M. Aono1, 1NIMS and 2Waseda Univ. (Japan)

PS-3-7
1/f Noise Performances and Noise Sources of Accumulation Mode Si(100) n-MOSFETs
P. Gaubert, A. Teramoto and S. Sugawa, Tohoku Univ. (Japan)

PS-4-8
Guideline Model for the Bias-Scheme-Dependent Power Consumption of a ReRAM Crossbar
Array
W.K. Sun, H. Lim, S.J. Choi and H.S. Shin, Ewha Womans Univ. (Korea)

PS-3-8
ON Current Enhancement of Nanowire Schottky Barrier Tunnel FET
K. Takei1, S. Hashimoto1, J. Sun1, X. Zhang1, S. Asada1, T. Xu1, T. Wakamizu1, T. Matsukawa2, M.
Masahara2 and T. Watanabe1, 1Waseda Univ. and 2AIST (Japan)

PS-4-9Properties of SiC Resistive Memory for Harsh Environments
K. Morgan, J. Fan, R. Huang, L. Zhong, R. Gowers, L. Jiang and K. De Groot, Univ. ofSouthampton (UK)

PS-3-9Novel 5-State Latch Using Double-Peak Negative Differential Resistance (NDR) andStandard Ternary Inverter (STI)
S. Shin and K.R. Kim, UNIST (Korea)

PS-4-10
Understanding of the Abnormal Unipolar Resistance Switching Behavior in CBRAM
H.T. Sun, Q. Liu, D.L. Xun, K.K. Zhang, H.B. Lv, W. Banerjee, S.B. Long and M. Liu, IMECAS(China)- 31 -

PS-4-11
SONNOS Nonvolatile Memory Based on Ultra-Thin Body Poly-Si Junctionless Field-EffectTransistor with Excellent Retention
Y.R. Lin1, W.C. Wang1, Y.H. Lin2 and Y.C. Wu1, 1National Tsing Hua Univ. and 2National United
Univ. (Taiwan)

PS-6-4
Thermal Stability of the Interface between Atomic Layer Deposited High-k ZrO2 and GaN
H. Wang1,2, G. Ye1 and K.S. Ang2, 1NTU and 2TL@NTU (Singapore)
PS-6-5
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
H.S. Lee1,2, D.Y. Jung1, Y.R. Park1, J.H. Na1, H.G. Jang1, H. Lee1, C.H. Jun1, J.B. Park1, Z.S. Kim1,
J.K. Mun1, S.O. Ryu2, S.C. Ko1 and E.S. Nam1, 1Electronics and Telecommunications Res. Inst. and2
Dankook Univ. (Korea)

PS-4-12 (Late News)
Concept of a SOT-MRAM Based on 1Transistor-1MTJ-Cell Structure
A. Makarov, T. Windbacher, V. Sverdlov and S. Selberherr, TU Wien (Austria)
PS-4-13 (Late News)
Theoretical Study of SET Operation in Nantero Memory Cell
M. Stopa1,2 and T. Rueckes1, 1MIT and 2Nantero Inc. (USA)Area 5: Advanced Circuits and Systems

PS-6-6
Electrolyte Electro-Reflectance Spectra of Crack-Free AlGaN/GaN High Electron Mobility
Transistors on Si Substrate
T.S. Ko1, B.Y. Hu1, N.W. Chang1, D.Y. Lin1 and J.S. Li2, 1National Univ. of Changhua Edu. and2
Feng Chia Univ. (Taiwan)(12 papers)

PS-6-7
Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement
C.C. Liu1, Y.X. Huang1, W.C. Shih1, H.H. Hsu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1 and H. Iwai2,
1
NCTU and 2Tokyo Tech (Taiwan)

PS-5-1
Associative Memory for Nearest Neighbor Search with High Flexibility of Reference-Vector
Number Due to Configurable Dual-Storage Space
F. An, K. Mihara, S. Yamasaki, L. Chen and H.J. Mattausch, Hiroshima Univ. (Japan)

PS-6-8The Si-Implanted Source/Drain of GaN-based High Electron Mobility Transistors by Using
Stacking AlN Protection Layers
A.J. Tzou1, D.H. Hsieh1, J.K. Huang1, C.J. Su2, Z.Y. Li1,3, C.Y. Chang1,4 and H.C. Kuo1, 1NCTU, 2
NDL, NARLabs, 3 Epistar Inc. and 4Academia Sinica (Taiwan)

PS-5-2
Memory-based LVQ Neural Network with Dedicated Learning Circuit
X. Zhang, F. An, L. Chen and H.J. Mattausch, Hiroshima Univ. (Japan)
PS-5-3
Non-volatile and Volatile Hybrid Memories Embedded in the Standard CMOS Process
H. Lin, Y.L. Chiou, H.J. Chiu and C.Y. Wu, National Chung Hsing Univ. (Taiwan)

PS-6-9High Performance of AlGaN/GaN HEMT Device with Embedded Multiple Graphene Layers
C.Y. Lee1, Y.P. Lan2, Y.S. Gau3, C.H. Chen3, R.M. Lin3 and C.Y. Chang1,2, 1Academia Sinica, 2 NCTU
and 3Chang Gung Univ. (Taiwan)

PS-5-4
A Compact 0.3-to-1.125GHz Self-Biased PLL for System-on-Chip Clock Generation in
0.18μm CMOS
Z. Zhang, L. Liu, P. Feng, J. Liu and N. Wu, Chinese Academy of Sciences (China)

PS-6-102-Dimentional Characterization of Ion-Implantation Damage in GaN Schottky Contacts
Using Scanning Internal Photoemission Microscopy
K. Shiojima1, S. Murase1, S. Yamamoto1, T. Mishima2 and T. Nakamura2, 1Univ. of Fukui and 2Hosei
Univ. (Japan)

PS-5-5
A DC-balanced Bus-invert Coding for Stabilizing the Intermediate Power Level in StackedVdd LSIs
Y. Kohara, N. Kubo, M. Alimudin, A. Rahmat and K. Nakamura, Kyushu Inst. of Tech. (Japan)

PS-6-11
DC Characteristics in Nearly Lattice-Matched InAlN/AlGaN Heterostructure Field-EffectTransistors
T. Tsutsumi, G. Nishino, J. Freedsman, M. Miyoshi and T. Egawa, Nagoya Inst. of Tech. (Japan)

PS-5-6
A Wireless Power Transfer System for Small-Sized Sensor Applications
Y. Akihara1, T. Hirose1, Y. Tanaka1, N. Kuroki1, M. Numa1 and M. Hashimoto2, 1Kobe Univ. and2
Osaka Univ. (Japan)

PS-6-12High-Quality PECVD SiO2 Gate Oxide for Use in Normally-Off AlGaN/GaN Recessed MOSHFETs
H.S. Kim1, J.G. Lee2, S.H. Park1, S.W. Han1, K.S. Seo3 and H.Y. Cha1, 1Hongik Univ., 2 Univ. of
Texas at Dallas and 3Seoul National Univ. (Korea)

PS-5-7
Batteryless Transmitter for Biomedical Implant
H.C. Chen, C.Y. Kao and S.C. Yang, National Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-6-13
Analysis of Post-Deposition Annealing Effects on Insulator/Semiconductor Interface of Al2O3/
AlGaN/GaN High-Electron-Mobility Transistors on Si Substrates
T. Kubo, M. Miyoshi and T. Egawa, Nagoya Inst. of Tech. (Japan)

PS-5-8A Fully On-Chip Switched-Capacitor DC-DC Power Converter with Startup/Fail-Safe
CircuitY. Kojima, T. Hirose, K. Tsubaki, T. Ozaki, H. Asano, N. Kuroki and M. Numa, Kobe Univ. (Japan)
PS-5-9A Fully Integrated Boost Power Supply with On-Chip Photovoltaic Device
A. Watanabe, D. Orihara, Y. Minami and N. Nakano, Keio Univ. (Japan)

PS-6-14High Thermal Stability AlGaN/GaN Schottky Barrier Diode with Diamond-Like Carbon(DLC) Heat Dissipation Anode Design
Y.H. Cheng, H.Y. Wang, L.Y. Peng and H.C. Chiu, Chang Gung Univ. (Taiwan)

PS-5-10Discharging-Phototransistor-Integrated High-Voltage Si Photovoltaic Cells for Fast Drivingof an Electrostatic MEMS Actuator by Wavelength Modulation
I. Mori and Y. Mita, Univ. of Tokyo (Japan)

PS-6-15
Nonvolatile Memory Effects in GaN Metal-Oxide-Semiconductor Heterostructure FETs withThin AlGaN Barrier
D.M. Keum, K.H. Cho and H.T. Kim, Hongik Univ. (Korea)

PS-5-11
Design and Characteristics of a MEMS Human Body Hardness Sensor Aimed to Diagnosis of
Lesion Size
Y. Maeda, K. Terao, F. Shimokawa and H. Takao, Kagawa Univ. (Japan)

PS-6-16
Low Current Collapsed AlGaN/GaN HEMT-on-Si Substrate with SiN x / HfO 2 Dual
Passivation Layer
D.H. Kim1, M.J. Kang1, S.K. Eom1, H.Y. Cha2 and K.S. Seo1, 1Seoul National Univ. and 2Hongik
Univ. (Korea)

PS-5-12CMOS Temperature Sensor Using a Modified Bandgap Reference Voltage Circuit with a
Low-Temperature-Coefficient Resistor Structure
R.L. Wang1, J.L. Shi1, Y.F. Hao1, K.B. Lee1, X.J. Yang1, W.D. Wu1, H.H. Liao2, H.H. Tsai2 and Y.Z.
Juang2, 1National Kaohsiung Normal Univ. and 2NARLabs (Taiwan)
Area 6: Compound Semiconductor Electron Devices & Related Technologies

PS-6-17
Preparation of InAs Surface by Hydrogen Plasma Pre-Treatment for Low Interfacial Trap
Density MOS Capacitors
C.Y. Chen1, C.H. Hsieh1, W.J. Hsueh1 and J.I. Chyi1,2, 1National Central Univ. and 2Academia
Sinica (Taiwan)
PS-6-18
Analysis of Energy States Where Electrons and Holes Coexist in Pseudomorphically Strained
InAs HEMTs
Y. Nishio, T. Sato, N. Hirayama, T. Iida and Y. Takanashi, Tokyo Univ. of Science (Japan)(27 papers)

PS-6-1
Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of
Diamond Heat Sink
Y.T. Kim1, J.H. Lee2 and Y.M. Jhon1, 1Korea Inst. of Sci. & Tech. and 2KNU (Korea)

PS-6-19
Low Interface Trap Density HfO2/Al2O3/InAs MOS Capacitors Prepared by Nitrogen Plasma
Treatment
G.B. He1, W.J. Hsueh1, C.Y. Chen1 and J.I. Chyi1,2, 1National Central Univ. and 2Research Center
for Applied Sci., Academia Sinica (Taiwan)

PS-6-2
Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator
for High Power Application
Y.X. Huang1, W.C. Shih1, T.W. Lin1, C.H. Wu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1, K. Kakushima2 andH. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)

PS-6-20
Study on Electrical Performances of ZnO-TFTs with 3-D Finlike Channels Fabricated by
Nanoimprint Lithography and Atomic Layer Deposition
H.J.H. Chen1, B.L. Yeh1, C.Y. Chiang2, T.N. Lee1 and K.C. Hsieh2, 1National Chi Nan Univ. and2
National Tsing Hua Univ. (Taiwan)

PS-6-3
Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2
Gate Dielectric
W.C. Shih1, H.H. Hsu1, Y.X. Huang1, T.W. Lin1, C.H. Wu1, Y.C. Lin1, J.S. Maa1, E.Y. Chang1, K.
Kakushima2 and H. Iwai2, 1NCTU and 2Tokyo Tech (Taiwan)- 32 -

PS-6-21
Structural Properties and Electrical Characteristics of High-κ Lu 2O3 and Lu2TiO5 Gate
Dielectrics for InGaZnO Thin-Film Transistors
T.M. Pan, C.H. Chen, H.J. Wang and I.C. Huang, Chang Gung Univ. (Taiwan)

PS-7-12
Free Spectral Range (FSR) Control of a High Quality Factor - 1D Photonic Crystal (PhC)
Extended Cavity
A.R. Md Zain1, B.Y. Majlis1 and R.M. De La Rue2, 1Universiti Kebangsaan Malaysia and 2Univ. of
Glasgow (Malaysia)

PS-6-22
Impact of Gate Dielectrics and Oxygen Annealing on Tin-Oxide Thin-Film Transistors
C.W. Zhong1, H.C. Lin1, J.R. Tsai2, K.C. Liu3 and T.Y. Huang1, 1NCTU, 2 Asia Univ. and 3Chang
Gung Univ. (Taiwan)

PS-7-13
Output Characteristics of a Double Circular Ring Resonators Laser Diode Through Slioton
Wave Guiding
M.C. Shih, Y.H. Kao and W.H. Lan, National Univ. of Kaohsiung (Taiwan)

PS-6-23
Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High
Indium Composition
K. Tsutsui, D. Matsubayashi, N. Ishihara, T. Takasu, S. Matsuda and S. Yamazaki, Semiconductor
Energy Lab. Co., Ltd. (Japan)

PS-7-14Highly Fabrication-Tolerant Shallow-Grating Coupler for Robust Coupling to Multimode"Optical Pin"
J. Ushida, M. Tokushima, T. Uemura and K. Kurata, PETRA (Japan)

PS-6-24
ZnO Thin Film Transistor with U-shape Active Layer for High Performance Application
H.J. Yun, Y.M. Kim, S.D. Yang, H.D. Lee and G.W. Lee, Chungnam National Univ. (Korea)

PS-7-15Ultracompact, Low-loss Waveguide Polarizer Based on Plasmonics
L. Gao, B. Bai and Z. Zhou, Peking Univ. (China)

PS-6-25 (Late News)
Design of Drain for Low off Current in GaAsSb/InGaAs Tunnel FETs
S. Iwata1, W. Lin1, K. Fukuda1,2 and Y. Miyamoto1, 1Tokyo Tech and 2AIST (Japan)

PS-7-16
Localized Surface Plasmon-Enhanced Light Emission Output of Amorphous Silicon
Quantum Dots Light-Emitting Device with Plasmonic Subwavelength Ag Grating Structure
T.H. Tsai, W.K. Choi and H.Y. Lin, National Taiwan Univ. (Taiwan)

PS-6-26 (Late News)
Low-noise Performance of Pseudomorphic InGaAs/InAlAs HEMTs
I. Watanabe1, A. Endoh1,2, T. Mimura1,2 and A. Kasamatsu1, 1NICT and 2Fujitsu Labs. (Japan)

PS-7-17
The Excellent Full-color Micro Display Dominated by RGB Quantum Dots
H.Y. Lin1, H.V. Han1, W.C. Chong2, J.R. Li1, C.C. Lin1, H.M. Chen1, K.M. Lau2 and H.C. Kuo1,
1
NCTU and 2HKUST (Taiwan)

PS-6-27 (Late News)
Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs
A. Endoh1,2, I. Watanabe1, A. Kasamatsu1, T. Takahashi2, S. Shiba2, Y. Nakasha2, T. Iwai2 and T.
Mimura1,2, 1NICT and 2Fujitsu Labs. (Japan)
Area 7: Photonic Devices and Related Technologies

PS-7-19
Enhanced Light Extraction from Lateral Side of InGaN-based LEDs Grown on Nano-Sized
Patterned Sapphire Substrates
Y.H. You1, W.H. Wu2, B.W. Lin3, W.C. Hsu4, V.C. Su1, M.L. Lee1, P.H. Chen1, C.H. Kuan1 and R.M.
Lin2, 1National Taiwan Univ., 2 Chang Gung Univ., 3 NCTU and 4Sino-America Silicon Products
Inc. (Taiwan)(23 papers)

PS-7-1GaN Metal-Insulator-Semiconductor Ultraviolet Detectors with Lanthanum Fluoride (LaF3)
Insulating Layers
C.H. Chen and C.F. Cheng, Cheng Shiu Univ. (Taiwan)

PS-7-20
Hydrothermal Growth of Single-crystalline ZnO Thin Films and Theirs Application on UVPhotodetectors
C.H. Wu1, S.J. Wang1, T.H. Lin1, Y.C. Tu1, C.H. Hung1, P.Y. Liu1, Y.H. Chin1, K.M. Uang2 and T.M.
Chen2, 1NCKU and 2WuFeng Univ. (Taiwan)

PS-7-2
Performance Enhancement of Blue InGaN Light-Emitting Diodes with p-InGaN/GaN SPS
Last Barrier and p-AlGaN/GaN SPS EBL
P.K. Lin1, C.K. Wang1, Y.Z. Chiou1, S.B. Chang2 and S.J. Chang2, 1Southern Taiwan Univ. of Sci.
and Tech. and 2NCKU (Taiwan)

PS-7-21
Preparation of Porous p-ZnO Films by Hydrothermal Method and Its Application on
Ultraviolet Sensors
Y.C. Tu1, S.J. Wang1, T.H. Lin1, C.H. Hung1, C.H. Wu1, P.Y. Liu1, Y.H. Chin1, K.M. Uang2 and T.M.
Chen2, 1NCKU and 2WuFeng Univ. (Taiwan)

PS-7-3
Enhanced Light Intensity of InGaN-based LEDs Grown on Molybdenum Patterned Sapphire
Substrates
W.H. Wu1, Y.H. You2, V.C. Su2, M.L. Lee2, P.H. Chen2, C.H. Kuan2 and R.M. Lin1, 1Chang Gung
Univ. and 2National Taiwan Univ. (Taiwan)

PS-7-22
Electro-Optic Characteristics Improvement of ZnMgTe/ZnTe Waveguide Devices
W.C. Sun1, F. Kazami1, J. Wang1, T. Nakasu1, S. Hattori1, T. Kizu1, Y. Hashimoto1, M. Kobayashi1,2
and T. Asahi3, 1Waseda Univ., 2 Kagami Memorial Res. Inst. for Materials Sci. and Tech. and 3JX
Nippon Mining & Metals Corp. (Japan)

PS-7-4
A Narrow-band Short Wavelength Type II InAs/GaSb Superlattices Photodetector with High
Performance
J.L. Huang1,2, W.Q. Ma1, Y.H. Zhang1, Y.L. Cao1, K. Liu1, J.W. Huang1 and S.L. Lu2, 1Institute of
Semiconductors, CAS and 2SINANO, CAS (China)

PS-7-23
Demonstration of Spatial Demultiplexing of Polarization Modulation Signal Based on
Magneto-optical Modulation of Multiplexed Lightwave in Fiber
K. Nishibayashi 1, H. Yoneda 2, K. Kuga 3 and H. Munekata 1, 1Tokyo Tech, 2 Univ. of ElectroCommunications and 3NHK STRL (Japan)

PS-7-5Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II
Infrared Photodetectors with Reduced Device Areas
H.A. Chen1,2, T.C. Shih1, H.Y. Chen3 and S.Y. Lin1,2,3, 1Academia Sinica, 2 National Taiwan Univ. and3
National Taiwan Ocean Univ. (Taiwan)

PS-7-24
Fabrication of Mesa-type Mg2Si Pn-junction Photodiode for 2 - 4 μm IR-detection
T. Akiyama, N. Hori and H. Udono, Ibaraki Univ. (Japan)
Area 8: Advanced Material Synthesis and Crystal Growth Technology

PS-7-6
Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection
InGaAsP Photonic Devices
J.K. Park1,2, M. Takenaka1,2 and S. Takagi1,2, 1Univ. of Tokyo and 2JST-CREST (Japan)(27 papers)

PS-8-1
Temperature-Dependent Photoluminescence and Hall-Effect Studies of Ge 1-ySn y Alloys
Grown on Ge-Buffered Si Substrates
M.Y. Ryu1, T.R. Harris2, B. Wang2,3, Y.K. Yeo2 and J. Kouvetakis4, 1Kangwon National Univ., 2 AFIT,
3
Wright State Univ. and 4Arizona State Univ. (Korea)

PS-7-7
Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with
Segmented Contacts
N. Ozaki1,2, T. Yasuda1, H. Shibata1, H. Ohsato3, E. Watanabe3, N. Ikeda3, Y. Sugimoto3, D.T.D.
Childs2 and R.A. Hogg2, 1Wakayama Univ., 2 Univ. of Sheffield and 3NIMS (Japan)

PS-8-2
Electrical Property of Single-phase HMS Grown by Temperature Gradient Solution Growth
Method using Ga and Sn Solvent
S. Hori1, M. Iioka1, S. Jimba1, Y. Hara2 and H. Udono1, 1Ibaraki Univ. and 2Ibaraki College of Tech.
(Japan)PS-7-8
Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide
Structure
F. Gao, S. Luo, H.M. Ji and T. Yang, Chinese Academy of Sciences (China)

PS-8-3
Surface Hydrogen Passivation and Sn Distribution in Ge1-xSnx (001) Materials: A DFT Study
H. Johll1, M. Samuel1, R.Y. Koo1, H.C. Kang2,3, S.W. Ong3, Y.C. Yeo2 and E.S. Tok2,3, 1National
Junior College, 2 NUS and 3Yale-NUS College (Singapore)

PS-7-9Photoconductivity with 1.55 μm Excitation of InAs QDs Embedded in InGaAs Barriers on
GaAs Substrate
K. Murakumo, Y. Yamaoka, N. Kumagai, T. Kitada and T. Isu, Tokushima Univ. (Japan)

PS-8-4
Role of Monolayer Indium Atom Distribution in Metalorganic Chemical Vapor Deposition of
InAs/GaAs Epitaxy on Ge Substrate
H.W. Yu, H.Q. Nguyen, T.M. Wang and E.Y. Chang, NCTU (Taiwan)

PS-7-10
Coupling Structures between Crystal/Amorphous Si Waveguides for In-Plane Integration
K. Itoh, Y. Kuno, J. Kang, Y. Hayashi, J. Suzuki, T. Amemiya, N. Nishiyama and S. Arai, Tokyo Tech
(Japan)PS-8-5Resonant Excitation of Single Luminescence Centers in GaAs:N
M. Ikezawa1, N. Yasuda1, L. Zhang1, Y. Sakuma2, K. Sakoda2 and Y. Masumoto1, 1Univ. of Tsukuba
and 2NIMS (Japan)

PS-7-11
Photosensing in MOS(p) and MOS(n) Photodiodes
C.T. Yang and J.G. Hwu, National Taiwan Univ. (Taiwan)- 33 -

PS-8-6
Free Exciton Emission from Hexagonal Boron Nitride Films Grown on Sapphire Substrates
by Low Pressure Chemical Vapor Deposition
N. Umehara, A. Masuda, T. Shimizu, T. Kouno, H. Kominami and K. Hara, Shizuoka Univ. (Japan)

PS-8-26
Thermoelectric Properties of YbxFeyCo4-ySb12 Prepared under High Pressure
Y. Chen, Y. Kawamura and C. Sekine, Muroran Inst. of Tech. (Japan)
PS-8-27
Effect of Fabrication Method on the Structural and Magnetic Properties of Copper Ferrite
S. Pongpadung, T. Kamwanna and V. Amornkitbamrung, Khon Kaen Univ. (Thailand)

PS-8-7N-face GaN (000-1) Films with Hillock-Free Smooth Surfaces Grown by Group-III-Source
Flow-Rate Modulation Epitaxy
C.H. Lin, T. Akasaka and H. Yamamoto, NTT Corp. (Japan)

PS-8-28 (Late News)
Chemical Vapor Deposition of Highly Resistive ZnO Films using Nonequilibrium N 2/O2
Plasma Generated near Atmospheric Pressure
Y. Nose1, T. Kiguchi1, T. Yoshimura1, A. Ashida1, T. Uehara2 and N. Fujimura1, 1Osaka Prefecture
Univ. and 2Sekisui Chemical Co., LTD. (Japan)

PS-8-8Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase
H. Shimoyama, M. Mori and K. Maezawa, Univ. of Toyama (Japan)
PS-8-9Selective-Area Growth of Heavily N-Doped C-GaN/GaAs Nanostubs on Si(100) Substrate by
Molecular Beam Epitaxy
Y.J. Chang, B. Beekley, M. Goorsky and J. Woo, UCLA (USA)Area 9: Physics and Applications of Novel Functional Devices and Materials(11 papers)

PS-9-1
Performance Enhancement of Calcium-doped Zinc Oxide Thin Film Transistors Fabricatedon Glass at Low Temperature
W. Yu, D.D. Han, G.D. Cui, P. Shi, Y. Zhang, Y.Y. Cong, X.L. Zhou, L.L. Huang, X. Zhang, Y. Wangand S.D. Zhang, Peking Univ. (China)

PS-8-10
AlGaN Microdisks on Top of Supporting GaN Columns Fabricated using Hydrogen
Environment Anisotropic Thermal Etching
S. Suzuki1, T. Kouno1, H. Takeshima1, A. Kikuchi2, K. Kishino2, M. Sakai3 and K. Hara1, 1Shizuoka
Univ., 2 Sophia Univ. and 3Univ. of Yamanashi (Japan)

PS-9-2Oxygen Partial Pressure Dependence of Ti-Zn-O Thin-Film Transistors Fabricated on
Flexible Plastic Substrate at Low Temperature
G.D. Cui, D.D. Han, W. Yu, P. Shi, Y. Zhang, L.L. Huang, Y.Y. Cong, X.L. Zhou, X.M. Zhang, S.D.
Zhang, X. Zhang and Y. Wang, Peking Univ. (China)

PS-8-11
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots
Grown by Metal-organic Chemical Vapor Deposition
B. Shi and K.M. Lau, The Hong Kong Univ. of Sci. & Tech. (China)

PS-9-3Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin
Barrier Layers in Silicon Microelectronics
Y.Y. Illarionov1,2, M.I. Vexler2, V.V. Fedorov2, S.M. Suturin2, N.S. Sokolov2 and T. Grasser1, 1TU
Wien and 2Ioffe Physical-Techn. Inst. (Austria)

PS-8-12
Effect of Remote Doping on Photoluminescence and Carrier Spin Dynamics in InGaAs
Quantum Dots
D. Yamazaki, S. Chen, J. Takayama and A. Murayama, Hokkaido Univ. (Japan)
PS-8-13
Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Sulfurization
Annealing Using (t-C4H9)2S2
S. Ishihara1, K. Suda1, Y. Hibino1, N. Sawamoto1, T. Ohashi2, S. Yamaguchi2, K. Matsuura2, H.
Machida3, M. Ishikawa3, H. Sudoh3, H. Wakabayashi2 and A. Ogura1, 1Meiji Univ., 2 Tokyo Techand 3Gas-phase Growth Ltd. (Japan)

PS-9-4All Oxide All Solution-processed Active Matrix Thin-film Transistor for Electrophoretic
Display Application
T.T. Phan1,2, S. Inoue1, H. Koyama3, Y. Takamura1,2 and T. Shimoda1, 1JAIST, 2 JST-CREST and
3
Toppan Printing Co., Ltd. (Japan)
PS-9-5
Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate
Voltage Modulation
N. Matsuo1, S. Nakamura1, T. Takada1, A. Heya1, K. Yamana1, T. Sato2, S. Yokoyama2 and Y.
Omura3, 1Univ. of Hyogo, 2 Hiroshima Univ. and 3Kansai Univ. (Japan)

PS-8-14Large Effect of Etchant on Electrical Performance of Transferred CVD Graphene
T.W. Chen1, Y.P. Hsieh1 and M. Hofmann2, 1National Chung Cheng Univ. and 2NCKU (Taiwan)
PS-8-15
Improved Synthesis and Air Stability of Two-Dimensional Material GeH
N. Shao, R.R. Liang, C.C. Sun, L. Xiao, J. Wang and J. Xu, Tsinghua Univ. (China)

PS-9-6
A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Fieldeffect Transistors
G. Hu, S. Hu, L. Wang, R. Liu and L. Zheng, Fudan Univ. (China)

PS-8-16
Topography and Atomic Strain Deformation of Epitaxial Graphene on Si-terminated 6H-SiC
Extended to the Few Microns Order
G. Rius1, N. Mestres2, Y. Tanaka1, O. Eryu1 and P. Godignon3, 1Nagoya Inst. of Tech., 2 ICMABCSIC and 3IMB-CNM-CSIC (Japan)

PS-9-7
A Concept of Heterogeneous Circuits with Epitaxial Tunnel Layer Tunnel FETs
J.H. Hung, P.Y. Wang, B.Y. Tsui and C.H. Yang, NCTU (Taiwan)

PS-8-17Synthesis of Si-based Nanostructures by Extraction of Metallic Atoms from Silicides by
Inositol Hexakisphosphate
K. Sasaki1, K. Sano1, X. Meng1, H. Suzuki1, T. Kobayashi2, T. Kuno3 and H. Tatsuoka1, 1Shizuoka
Univ., 2 Koba Tech. and 3Kankyo Science (Japan)

PS-9-8Gate-Stacking Engineering for Insta Ge/SiO2/SiGe MOS Devices
P.H. Liao1, W.T. Lai2, S.C. Luo1, K.C. Yang1, T. George1 and P.W. Li2, 1National Central Univ. and
2
NCTU (Taiwan)

PS-8-18
Temperature Dependence of Electrical Transport Properties of La 4 BaCu 5-x Co x O 13+δConducting Oxide Thin Films
A. Tsuruta1, Y. Tsujioka2, Y. Yoshida2, I. Terasaki1,2 and W. Shin1, 1AIST and 2Nagoya Univ. (Japan)

PS-9-9Novel Design of Electrostatic Lens Potential for Improving Bending Curvature andTransmission Probability of Drive Current for Vertical Body Channel MOSFET
M. Muraguchi1,2,3 and T. Endoh1,2,3, 1Tohoku Univ., 2 CIES, Tohoku Univ. and 3JST-ACCEL (Japan)

PS-8-19
Solvent Effect on Zinc Oxide Crystallites Shape using Submerged Photo-Synthesis
M. Jeem, K. Kawaguchi, A.M.R. Hamzah, J. Ishioka, S. Yatsu, T. Shibayama and S. Watanabe,
Hokkaido Univ. (Japan)

PS-9-11
Geometry-dependent Phase/Stress and Electrical Resistivity in Nickel-Silicide Nanowires
C.C. Wang1, Y.Y. Hsiao1, I.H. Chen1, W.T. Lai1, T. George1 and P.W. Li2, 1National Central Univ.
and 2NCTU (Taiwan)

PS-8-20
Study on Thermal Durability of AZO/Ag(Al)/AZO Transparent Conductive Film
Y. Sugimoto1, K. Igarashi1 and A. Kikuchi1,2, 1Sophia Univ. and 2Sophia Nanotech. Res. Center(Japan)PS-9-12
Changes in Morphology and Local Conductance of GeTe-Sb2Te3 Superlattice Films on Silicon
Made by Scanning Probe Microscopy in a Lithography Mode
L. Bolotov1,2, T. Tada1,2, Y. Saito1,2 and J. Tominaga1,2, 1AIST and 2JST-CREST (Japan)

PS-8-21
Study on Microstructure of Gd2O3 and Nd2O3 Compound Film Formed by RF Magnetron
Sputtering
Z. Wang, L. Xiao and J. Wang, Tsinghua Univ. (China)

Area 10: Organic Materials Science, Device Physics, and Applications(12 papers)

PS-10-1
Temperature Dependence Analysis of Printed Organic MOSFET
H. Zenitani1, T.K. Maiti2, T. Hayashi1, Y. Tanimoto1, K. Sato1, L. Chen2, H. Kikuchihara2, M. Miura
Mattausch2 and H.J. Mattausch1, 1Hiroshima Univ. and 2HiSIM, Hiroshima Univ. (Japan)

PS-8-23
Epitaxial Growth of Yttrium Monoxide Thin Film
K. Kaminaga1,2, R. Sei1,2, T. Fukumura2,3 and T. Hasegawa1,3, 1Univ. of Tokyo, 2 Tohoku Univ. and3
JST-CREST (Japan)

PS-10-2
Control of Threshold Voltage in Organic Thin-film Transistors by Modifying Gate ElectrodeSurface with MoOX Aqueous Solution and Its Application to Circuits
R. Shiwaku1, Y. Yoshimura1, Y. Takeda1, K. Fukuda1,2, D. Kumaki1 and S. Tokito1, 1Yamagata Univ.
and 2JST-PRESTO (Japan)

PS-8-24
Behavior of Si Atoms, Ge Atoms and Vacancies for Flash Lamp Annealing
A. Heya1, N. Matsuo1, S. Hirano1, Y. Nakamura2, T. Yokomori2 and M. Yoshioka2, 1Univ. of Hyogo
and 2USHIO Inc. (Japan)
PS-8-25
Low Temperature Liquid Phase Epitaxy of YBa2Cu3OY Films by the Molten KOH Method
S. Funaki, Y. Yamada, R. Okunishi and Y. Miyachi, Shimane Univ. (Japan)- 34 -

PS-10-3
Solution-Processed Hybrid Organic-Inorganic Complementary Thin-Film Transistor
Inverter
H.J. Cheong, S. Ogura, K. Kuribara, M. Yoshida, H.. Ushijima, N. Fukuda and S. Uemura, AIST
(Japan)PS-11-8
Characteristics of N2/H2 Annealed Ni-Co Nanowires Upon Immobilized Affinity of Pentahistidine-tagged Protein
C.-Y. Ho, T.-H. Lin and Y.-J. Chang, Chung Yuan Christian Univ. (Taiwan)
PS-11-9
A Fluorescent Arrayed Biosensor Using Liposome Encapsulating Calcein for Discriminationof Different Target Proteins by Principal Component Analysis
R. Imamura1, Z. Zhang1, T. Shimanouchi2, N. Murata1, K. Yamashita1, M. Fukuzawa1 and M. Noda1,
1
Kyoto Inst. of Tech. and 2Okayama Univ. (Japan)

PS-10-4Fabrication of Organic Field Effect Transistors Based on Printing Techniques and the
Improvement of FET Properties by the Insertion of Solution Processable Buffer Layers
A. Kanamori and E. Itoh, Shinshu Univ. (Japan)
PS-10-5
All-Solution-process Red Phosphorescent and Blue Fluorescent Organic Light-emitting
Diodes by Blade Coating
Y.F. Chang1, H.F. Meng1, H.W. Zan1, H.W. Lin2, K.T. Wong3, H.L. Huang4 and S.F. Horng2, 1NCTU,
2National Tsing Hua Univ., 3 National Taiwan Univ. and 4e-Ray Optoelectronics Tech. Co., Ltd.
(Taiwan)

PS-11-10
The Annealing Effect of BaSrTiO 3 Membrane in O 2 and N 2 Ambient for ElectrolyteInsulator-Semiconductor
Y.L. Su, C.H. Kao, C.F. Lin, C.W. Chang, C.L. Chang, S.W. Chang and Y.X. Huang, Chang Gung
Univ. (Taiwan)
PS-11-11
Controlled Decoration of Double Junction N +/N -/N + Polysilicon Nanobelt Device with
Platinum for Hydrogen Gas Sensor Application
N.A. Tran, C.H. Sang, F.M. Pan and J.T. Sheu, NCTU (Taiwan)

PS-10-6
Novel Textile Actuator Having a Large Displacement Consisting of Electrospun Poly(DLLactic Acid) Fibrous Film and Its Mechanism
T. Nobeshima1, Y. Ishii2, H. Sakai3, S. Uemura1 and M. Yoshida1, 1AIST, 2 Toyohashi Univ. of Tech.
and 3JAIST (Japan)

PS-11-12 (Late News)
Cross-Talk Immunity of Gold-Nanoparticle Incorporated PEDOT:PSS Pressure Sensors with
2×2 Cross-Point Array Structure
R.S. Karmakar1, Y. Fu1, S.H. Chen1, J.C. Wang1, Y.J. Lu2, C.Y. Huang2, K.C. Wei2 and C.S. Lai1,
1
Chang Gung Univ. and 2Chang Gung Memorial Hospital (Taiwan)

PS-10-7
Deposition Characteristics of Small Molecule Organic Thin Film (CBP:PBD:TPD:Ir(Mppy)3)
by Modified Electrospray Deposition
Y. Niinuma1, D. Nishi1, J. Ishino1 and A. Kikuchi1,2, 1Sophia Univ. and 2Sophia Nanotech. Res.
Center (Japan)

PS-11-13 (Late News)
Improvement of Filter-less Fluorescence Sensor by the Surface Planarization of Polysilicon
Photogate
Y.J. Choi, K. Takahashi, M. Matsuda, T. Hizawa, Y. Moriwaki, F. Dasai, Y. Kimura, I. Akita, T.
Iwata, M. Ishida and K. Sawada, Toyohashi Univ. of Tech. (Japan)

PS-10-8
Bis(thiophenyl)benzothiadiazole Derivatives as Hole-Transporting Red Emitters for Efficient
Solution-Processed Pure Red Electroluminescent Devices
V. Promarak1, A. Thangthong2, S. Namuangruk3, T. Sudyoadsuk1, T. Kaewin2, S. Jungsuttiwong2 and
A. Prachumrak1, 1Vidyasirimedhi Inst. of Sci. and Tech., 2 Ubon Ratchathani Univ. and 3NANOTEC(Thailand)

Area 12: Spintronics Materials and Devices

PS-10-9 (Late News)
Lower Power Consumption Technique on Organic Circuits for Roll-to-roll Process.
K. Kuribara1, K. Kakita2, Y. Tanaka2 and M. Yoshida1, 1AIST and 2Ube Indus., Ltd. (Japan)

PS-12-1
Anti-Damping Torque Engineering in Trilayer Spin-Hall System
G. Gupta, M.B.A. Jalil and G. Liang, NUS (Singapore)

PS-10-10 (Late News)
Achieving Low-Program Voltage and High-Stability in Controllable Organic Complementary
Logic Circuits by Photoactive Gate Dielectric
T.T. Dao 1, H. Sakai 2, K. Ohkubo 3, S. Fukuzumi 4 and H. Murata 2, 1Univ. of Transport andCommunications, 2 JAIST, 3 Osaka Univ. and 4Ewha Womans Univ. (Vietnam)

PS-12-2
Enhancement of Gilbert Damping in Trilayer Synthetic Antiferromagnets via Dynamic
Exchange Interactions
T. Chiba1, G.E.W. Bauer1,2,3 and S. Takahasi1, 1IMR, Tohoku Univ., 2 WPI-AIMR, Tohoku Univ. and3
Kavli Inst. of NanoScience Delft Univ. of Tech. (Japan)

PS-10-11 (Late News)
Molecular Dynamics and Electronic Structure Studies of Organic Semiconductors under
Mechanical Stress
K. Yamakawa, W. Xie., T. Yanase, T. Nagahama and T. Shimada, Hokkaido Univ. (Japan)

PS-12-3
A Pulse Current Synchronization Scheme for Spin Torque Nano Oscillators
K. Nakada1, K. Miura2 and T. Kimura3, 1Hiroshima City Univ., 2 Kwansei Gakuin Univ. and3
Kyushu Univ. (Japan)

PS-10-12 (Late News)
Achieving Efficient Solution-Processed Small Molecular Solar Cells via Non-halogenatedSolvent
C.W. Chu1,2 and M.E. Farahat1, 1National Tsing Hua Univ. and 2Academia Sinica (Taiwan)
Area 11: Sensors and Materials for Biology, Chemistry and Medicine(20 papers)

PS-12-4Spin Transport in Magnetic Tunnel Junctions with the Insertion of [6]Cyclo-2,7-naphthylenes
Organic Semiconductor
K. Suzuki1, T. Izumi2,3, X. Zhang1, A. Sugihara1, S.T. Pham1, H. Taka2,3, S. Sato1,2, H. Isobe1,2 and S.
Mizukami1, 1Tohoku Univ., 2 JST-ERATO and 3KONICA MINOLTA, Inc. (Japan)(13 papers)

PS-12-5
Bias Voltage Dependence of the Spin-dependent Tunneling Conductance of Co2(Mn,Fe)SiBased Magnetic Tunnel Junctions Exhibiting Giant Tunneling Magnetoresistances
K. Moges, B. Hu, H.x. Liu, T. Uemura and M. Yamamoto, Hokkaido Univ. (Japan)

PS-11-1
IGZO Substrate for PH Detection in LAPS with High Photo Response
C.H. Chen, C.M. Yang, L.B. Chang, J.C. Wang and C.S. Lai, Chang Gung Univ. (Taiwan)

PS-12-6
Temperature Dependence of Spin-Dependent Tunneling Conductance of Magnetic Tunnel
Junctions with Highly Spin-Polarized Electrodes
B. Hu, Kidist. Moges, H.x. Liu, Y. Honda, T. Uemura and M. Yamamoto, Hokkaido Univ. (Japan)

PS-11-2
Temperature-Lowered Plasma Treatment by Controlling Direction of Supplying Reactive
Species for Biological Application
Y. Nakayama1, S. Kumagai1, H. Hashizume2, T. Ohta3, M. Ito3, M. Hori2 and M. Sasaki1, 1Toyota
Tech. Inst., 2 Nagoya Univ. and 3Meijo Univ. (Japan)

PS-12-7
Exchange Bias Effects in Ni2MnAl/Ferromagnet Film Bilayers
T. Kubota, T. Tsuchiya, T. Sugiyama and K. Takanashi, Tohoku Univ. (Japan)

PS-11-3
A Friendly Portable 2D Chemical Imaging System
C. Ren1, C.G. Lyu1, H.L. Liu2, Y.M. Chen2, Y.C. Hsu2, C.M. Yang2 and C.S. Lai2, 1Tianjin Univ. and2
Chang Gung Univ. (China)

PS-12-8
Theoretical Sensitivity in Magnetic Field Sensors using a Spin-torque Oscillator
Y. Suzuki1,2, A. Tulapurkar3, H. Tomita1, E. Tamura1, H. Kubota2, S. Miwa1, A. Fukushima2 and S.
Yuasa2, 1Osaka Univ., 2 AIST and 3IIT Bombay (Japan)

PS-11-4
High Sensitive Biosensor using Si Photonic Crystal Cavity Resonators
A.K. Sana, K. Honzawa, Y. Amemiya and S. Yokoyama, Hiroshima Univ. (Japan)

PS-12-9Nanoscale Magneto-Resistance Sensors with Improved Sensitivity using Resonant Tunneling
Magnetic Tunnel Junctions
N. Chatterji, A. Sharma, A. Tulapurkar and B. Muralidharan, IIT Bombay (India)

PS-11-5
Development of a Novel Device for Allergy Test Based on Semiconductor Principle
H.Y. Yang1, A. Saito1, T. Kajisa2, Y. Yanase3 and T. Sakata1, 1Univ. of Tokyo, 2 PROVIGATE Inc. and3
Hiroshima Univ. (Japan)

PS-12-10
Experimental Demonstration of Long-Distance Propagation of a Surface Plasmon on the
Surface of a Ferromagnetic Metal
V. Zayets, H. Saito, S. Yuasa and K. Ando, AIST (Japan)

PS-11-6
Nanosphere Lithography (NSL) on Au Nanopatterned Electrodes for Electrochemical DNA
Detection
A. Purwidyantri1, C.H. Chen2, C.C. Chiou1, Y.C. Tian3 and C.S. Lai1, 1Chang Gung Univ., 2 National
Taiwan Univ. of Sci. and Tech. and 3Chang Gung Memorial Hospital (Taiwan)

PS-12-11
Influence of Oxygen Partial Pressure on Electrical and Magnetic Characteristics of Spinel
CoFe2O4 Thin Films
M. Araki, H. Kajita, N. Takahashi, T. Yanase, T. Shimada, H. Ohta and T. Nagahama, Hokkaido
Univ. (Japan)

PS-11-7
Highly Sensitive pH-EGFET Sensors with Oxygen-Plasma-Treated Reduced Graphene Oxide
Films Sprayed on the Reverse Pyramid Substrate
Y.R. Li, S.H. Chang, W.L. Tsai, C.T. Chang and H.C. Cheng, NCTU (Taiwan)- 35 -

PS-12-12
Magnetic and Electronic Properties of Epitaxial Mn2CoAl Films
K. Ueda, S. Hirose, S. Aichi, T. Hajiri and H. Asano, Nagoya Univ. (Japan)
PS-12-13
Crystallographic Properties of L10 Ordered FeNi Thin Films Fabricated by Sputtering and
Rapid Thermal Annealing
M. Mizuguchi1, T.Y. Tashiro1, T. Koganezawa2 and K. Takanashi1, 1Tohoku Univ. and 2SPring-8/
JASRI (Japan)

PS-13-11
Mechanisms of Polarization Switching in Graphene Oxide and Poly(Vinylidene Fluoride)Graphene Oxide Films
Z.Y. Jiang1, G.P. Zheng1, K. Zhan2 and Z. Han1,2, 1The Hong Kong Polytechnic Univ. and 2USST(China)PS-13-12
Energetics of H2O Encapsulated in Fullerenes under an Electric Field
J. Sorimachi and S. Okada, Univ. of Tsukuba (Japan)

PS-12-14
Experimental Analysis of Shubnikov-De Haas Oscillation for Slightly Asymmetric InGaAs/
InAlAs Double Quantum Wells
H. Chen1, T. Matsuura1, A. Sawada1, T. Yamashige1, B. Liu1, H. Sugiyama2, Y. Sekine2 and T. Koga1,
1
Hokkaido Univ. and 2NTT Corp. (Japan)

PS-13-13
Top-Gated Epitaxial Bilayer MoSe2 Transistors on AlN Wafers & the Impact of Top-down
Process-Induced Damage
M. Manfrini1, S. Sutar1, S. Brems1, P. Tsipas2, K.E. Aretouli2, E. Xenogiannopoulou2, A. Dimoulas2,
A.C. Mocuta1, I.P. Radu1 and A. Thean1, 1IMEC and 2NCSR Demokritos (Belgium)

PS-12-15
Real Space Analysis of Classical Diffusion and Weak Localization of Electrons in Mesoscopic
Systems from Boltzmannian Picture
A. Sawada and T. Koga, Hokkaido Univ. (Japan)

PS-13-14
XPS Study of HfO2 Growth on 2H-MoS2 Substrate
C.P. Chen1, S.W. Ong2, J.W. Chai3, Z. Zhang3, S.J. Wang3, J.S. Pan3 and E.S. Tok1,2, 1NUS, 2 YaleNUS College and 3Inst. of Material Res. and Eng. (Singapore)

PS-12-16
Electron G-factor Engineering in GaAs Quantum Nano-Disks Fabricated by Defect-Free
Neutral Beam Etching Process
Y.C. Tsai1, L.W. Yang1, Y. Li1, O. Voskoboynikov1, A. Higo2, A. Murayama3 and S. Samukawa2,
1
NCTU, 2 Tohoku Univ. and 3Hokkaido Univ. (Taiwan)

PS-13-15
Electrical and Optical Properties of Co-doped and Undoped MoS2 Crystals
C.C. Huang1, T.S. Ko1, D.Y. Lin1, Y.J. Ruan1 and Y.S. Huang2, 1National Univ. of Changhua Edu.
and 2National Taiwan Univ. of Sci. and Tech. (Taiwan)

PS-12-17
Transient Analysis of Oblique Hanle Signals Observed in GaAs
Z.c. Lin, M. Yamamoto and T. Uemura, Hokkaido Univ. (Japan)

PS-13-16
MoS 2 FET based Oxygen Sensors with Gate Voltage Stress Induced Performance
Enhancement
Y. Tong, Z. Lin, J.T.L. Thong, D.S.H. Chan and C. Zhu, NUS (Singapore)

PS-12-18
Influence of Si Surface on Spin Accumulation and Transport Signals in CoFe/MgO/n+-Si
Junctions
M. Ishikawa1, H. Sugiyama1, T. Inokuchi1, K. Hamaya2, N. Tezuka3 and Y. Saito1, 1Toshiba Corp., 2
Osaka Univ. and 3Tohoku Univ. (Japan)

PS-13-17
Theoretical Study of Multiatomic Vacancies in Hexagonal Boron Nitride
S. Urasaki and H. Kageshima, Shimane Univ. (Japan)
PS-13-18
Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires
F. Ishizaka1, Y. Hiraya1, K. Tomioka1,2 and T. Fukui1, 1Hokkaido Univ. and 2JST-PRESTO (Japan)

PS-12-19
Te m p e r a t u re D e p e n d e n c e s o f S p i n - i n j e c t i o n D y n a m i c s a n d S p i n - p o l a r i z e dElectroluminescence in InGaAs Quantum Dots
Y. Nomura1, Y. Akei1, J. Takayama1, T. Kiba2, A. Subagyo1, T. Yamamura1, D. Yamazaki1, K. Sueoka1
and A. Murayama1, 1Hokkaido Univ. and 2Kitami Inst. of Tech. (Japan)

PS-13-19
Hybrid Nanoimprint SiNW-based Solar Cell Fabrication with Efficiency Enhancement byHydrogen Annealing
W. Jevasuwan, K. Nakajima, Y. Sugimota and N. Fukata, NIMS (Japan)

PS-12-20
Spin Depolarization Induced by Low Electric Fields in Undoped InGaAs/AlGaAs Multiple
Quantum Well
Y.H. Chen, L.P. Zhu and Y. Liu, Chinese Academy of Sciences (China)
Area 13: Applications of Nanotubes, Nanowires, and Graphene

PS-13-20
Stability and Electronic Structures of Group IV Semiconductor Alloy Nanosheets: a First
Principles Study
T. Akiyama, K. Nakamura and T. Ito, Mie Univ. (Japan)(22 papers)

PS-13-21
Fundamental Strategy to Succeed a Vapor-Liquid-Solid Nanowire Growth
T. Yanagida, K. Nagashima, H. Yong, F. Zhuge, M. Kanai and A. Klamchuen, Kyushu Univ. (Japan)

PS-13-1
Direct Observation of Evolution in Graphene Layers by Electrical Properties
C.W. Huang, J.Y. Chen and W.W. Wu, NCTU (Taiwan)

PS-13-22
Axial Strain Effects on Phonon Thermal Transport in Silicon Nanowires
J. Hattori, V. Poborchii and T. Tada, AIST (Japan)

PS-13-2
Bandgap Engineering of Graphene by Mean of Adsorption of Defective Graphene
K. Kishimoto and S. Okada, Univ. of Tsukuba (Japan)

PS-13-23 (Late News)
Graphene Nanoribbon Field Effect Transistor Designing from Numerical Simulations
K. Takashima, S. Konabe and T. Yamamoto, Tokyo Univ. of Science (Japan)

PS-13-3
Al2O3/HfO2/Al2O3/Graphene Charge Trap Flash Device with a Self-aligned Gate
K.H. Lee and O.H. Kim, POSTECH (Korea)

Area 14: Power Devices and Materials

PS-13-4
Radical Spin Interaction of Graphene Flakes Embedded into h-BN Sheet
M. Maruyama and S. Okada, Univ. of Tsukuba (Japan)(19 papers)

PS-14-1
Minimization of Reverse Recovery Charge and Forward Voltage of Silicon Pin Diodes
Y. Yamashita and S. Machida, Toyota Central R&D Labs., Inc. (Japan)

PS-13-5First-Principles Calculations for Diffusion Mechanism of Li Atom from Li(EC)4 to Interlayerof Graphite with Hydrogen/Carbonylic Edge Terminations
T. Kawai1,2, S. Okada2 and M. Otani3, 1NEC Corp., 2 Univ. of Tsukuba and 3AIST (Japan)

PS-14-2
The Resistance Effect on Turn-on Speed of Resistor Assisted Trigger SCR Stacking Structure
S.S. Yen1, C.C. Fan1, Y.P. Lan1, C.Y. Chang1, Y.C. Chiu1, Z.W. Jiang2, S.C. Chang2, L.Y. Hung2 andC.C. Tsai2, 1NCTU and 2Himax Tech. Inc. (Taiwan)

PS-13-6
Study of the Electronic Properties and Strain sensitivity of Chemical Vapor DepositionGrown Graphene from C2H2
M. Yang, S. Sasaki, M. Ohnishi, K. Suzuki and H. Miura, Tohoku Univ. (Japan)

PS-14-3
Impact of 3D Stacking Silicon on Diamond Substrate for the ESD Protection Device
Y. Ikeda, K. Nakagawa and S. Matsumoto, Kyushu Inst. of Tech. (Japan)

PS-13-8
Thermal Interface Materials with Vertically-aligned Carbon Nanotubes and Their Thermal
Properties
S. Hirose1, M. Norimatsu1, K. Suzuki1, Y. Yagishita1, Y. Suwa2, T. Kurosawa2, K. Kawamura2, Y.
Mizuno1, D. Kondo1 and T. Iwai1, 1Fujitsu Labs. Ltd. and 2Shinko Electric Industries Co., Ltd.
(Japan)PS-14-4
The Heat Performance Study of Nanocrystal Diamond Film Used in a Thin Film Device
S. Duangchan1, Y. Koishikawa1, R. Shirahama1, K. Oishi1, A. Baba1, S. Matsumoto1 and M.
Hasegawa2, 1Kyushu Inst. of Tech. and 2AIST (Japan)
PS-14-5
Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar
Transistor Structures Fabricated by Surface Activated Bonding
J. Liang1, S. Shimizu1, S. Nishida1, N. Shigekawa1 and M. Arai2, 1Osaka City Univ. and 2New JRC(Japan)PS-13-9Competition and Cooperation between External and Internal Electric Fields for Carrier
Injection in Carbon Nanotubes with Defects
U. Ishiyama1, N.T. Cuong2 and S. Okada1, 1Univ. of Tsukuba and 2NIMS (Japan)
PS-13-10
Solution Processible Metal Nanoparticle Embedded Reduced Graphene Oxide for Stretchable
and Conductive ElectrodeY. Yoon1 and HL. Lee1, 2, 1IBS Sungkyunkwan Univ. and 2Sungkyunkwan Univ. (Korea)

PS-14-6
Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal
Oxidation
H. Xu1,2, Q. Yang1, M. Zhao1, S. Wang1, Z. Jin1, X. Liu1, A. Chanthaphan2, Y. Cheng2, T. Hosoi2, T.
Shimura2 and H. Watanabe2, 1IMECAS and 2Osaka Univ. (China)- 36 -

PS-14-7
Removal of Near-Interface Oxide Traps at SiO2/SiC Interface by Post-Oxidation Annealingin Reducing Ambient
H. Kajifusa, H. Hirai, Y. Fujino and K. Kita, Univ. of Tokyo (Japan)

PS-15-5
Efficiency Enhancement of Dye-sensitized Solar Cells by Flower-like Zinc Oxide
F.I. Lai1, M.Y. Hsieh2 and S.Y. Kuo2, 1Yuan Ze Univ. and 2Chang Gung Univ. (Taiwan)
PS-15-6
Organic Ultraviolet Photodetectors with m-MTDATA:LiF Nanocomposite Layer
R.W. Chuang1, P.Y. Su1 and C.H. Chen2, 1NCKU and 2Cheng Shiu Univ. (Taiwan)

PS-14-8
Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring
Depletion-layer Capacitance
H. Matsushima, H. Okino, K. Mochizuki and R. Yamada, Hitachi Ltd. (Japan)

PS-15-7
First-principles Study of Defect Formation in Photovoltaic Semiconductor Cu2SnS3
H. Nishihara, T. Maeda, A. Shigemi and T. Wada, Ryukoku Univ. (Japan)

PS-14-9
Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss
D. Navarro1, I. Pesic1, Y. Morikawa1, Y. Furui1 and M. Miura Mattausch2, 1Silvaco Japan and
2
Hiroshima Univ. (Japan)

PS-15-8
A Look into Plasmonic Energy Transfer in CIGS Solar Cells via Ultrabroadband
Femtosecond Pump-probe Spectroscopy
J.X. Li1, S.C. Chen1, A. Yabushita1, S.H. Tang1, D.P. Tsai2, H.C. Kuo1, K.H. Wu1 and T. Kobayashi1,
1
NCTU and 2Academia Sinica (Taiwan)

PS-14-10
Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient
Capacitance Measurements at Various Temperatures
Y. Fujino and K. Kita, Univ. of Tokyo (Japan)

PS-15-9
Investigation of the Optical Absorption in Si/SiO2 Superlattice for the Application to Solar
Cells
S. Yamada1, M. Konagai1,2 and S. Miyajima3, 1JST, 2 Tokyo City Univ. and 3Tokyo Tech (Japan)

PS-14-11
Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy
M. Shingo1, J. Liang2, N. Shigekawa2, M. Arai3 and K. Shiojima1, 1Univ. of Fukui, 2 Osaka City
Univ. and 3New JRC (Japan)

PS-15-10
Si Nanofilm Efficient UV Solar Absorber
V. Poborchii1, Y. Morita1, T. Tada1, P. Geshev2, Z. Utegulov3 and A. Volkov3, 1AIST, 2 Inst. of
Thermophysics of the Russian Academy of Sciences and 3Nazarbayev Univ. (Japan)

PS-14-12
Photoemission Spectroscopy Measurements of p+-Si/n-SiC and n+-Si/n-SiC Junctions by
Surface Activated Bonding
N. Shigekawa1, J. Liang1, M. Shingo2, M. Arai3 and K. Shiojima2, 1Osaka City Univ., 2 Univ. of
Fukui and 3New JRC (Japan)

PS-15-11
Hydrogenated Nanocrystaline Cubic Silicon Carbide/c-Si Heterojunction Solar Cell with
Triple Anti-Reflection Coating
E.O. Ateto and S. Miyajima, Tokyo Tech (Japan)

PS-14-13
Special Features in Stress Degradation of SiC-MOSFETs Observed in I-V Characteristics
E. Murakami, K. Oda and T. Takeshita, Kyushu Sangyo Univ. (Japan)

PS-15-12
A New Interdigitated Nanopillar HIT Solar Cell with 26.09% Efficiency Achieved by Using
Silicon-Carbide-based Window Layer
C.C. Lai, J.T. Lin, T.H. Huang, J.M. Syu and B.C. Yan, National Sun Yat-sen Univ. (Taiwan)

PS-14-14
Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave
Plasma CVD
T. Suto1, J. Yaita1,2, T. Iwasaki1,2,3, M. Natal4, S.E. Saddow4 and M. Hatano1,2,3, 1Tokyo Tech, 2 JSTCREST, 3 JST-ALCA and 4Univ. of South Florida (Japan)

PS-15-13
Development of Wider Bandgap n-type a-SiOX:H for High Efficiency a-Si:H Single Junction
and a-Si:H/a-Si1-XGeX:H Tandem Solar Cells
P.W. Chen, L.H. Lai, C.H. Hsu and C.C. Tsai, NCTU (Taiwan)

PS-14-15
Trench-channel MOSFET using C-H Diamond Surface
T. Saito, M. Kobayashi, T. Yamada, D. Xu, Y. Kitabayashi, D. Matsumura, M. Inaba, A. Hiraiwa
and H. Kawarada, Waseda Univ. (Japan)

PS-15-14
Local Surface Potential on Amorphous Silicon Thin Film Solar Cells by Kelvin ForceMicroscope
T. Itoh, T. Ito, H. Kuriyama and S. Nonomura, Gifu Univ. (Japan)

PS-14-16
Solution Growth of AlN Single Crystal on Sapphire using Multi-Component Solvent
Designed by Thermodynamic Calculation
S. Harada, M. Nagaya, S. Watanabe, M. Chen, Y. Takeuchi, K. Aoyagi, M. Tagawa and T. Ujihara,
Nagoya Univ. (Japan)

PS-15-15
Detailed-Balance-Limit Efficiencies of Solar Cells with Intermediate Bands and Carrier
Multiplication
K. Tanabe, Kyoto Univ. (Japan)

PS-14-17 (Late News)A 150 a SiC VMOSFET with 6 x 6 mm2 Chip Size on a 150 mm C-face in-house Epitaxial
Wafer
Y. Saitoh, H. Itoh, K. Wada, M. Sakai, T. Horii, K. Hiratsuka, S. Tanaka and Y. Mikamura,
Sumitomo Electric Industries, Ltd. (Japan)

PS-15-16
A Simple Optical Model Well Explains Plasmonic-Nanoparticle-Enhanced Spectral
Photocurrent in Optically Thin Solar Cells
K. Tanabe, Kyoto Univ. (Japan)

PS-14-18 (Late News)
Investigation of Conventional Bipolar Logic Technologies in 4H-SiC for Harsh Environment
Applications
H. Elgabra, A. Siddiqui and S. Singh, Khalifa Univ. of Sci., Tech. & Res. (UAE)

PS-15-17
InGaP/GaAs Heterojunction Phototransistor Powered by an On-Chip GaAs Solar Cell for
Energy Harvesting
P.H. Than, K. Uchida and S. Nozaki, Univ. of Electro-Communications (Japan)

PS-14-19 (Late News)
Investigation of Deep Levels in Diamond Based Radiation Detector by Transient Charge
Spectroscopy with Focused Heavy Ion Microbeam
Y. Ando1, 2, Y. Kambayashi1, 2, W. Kada1, S. Onoda2, T. Makino2, S. Sato2, H. Umezawa3, Y. Mokuno3,
S. Shikata4, O. Hanaizumi1, T. Kamiya2 and T. Ohshima2, 1Gunma Univ., 2 JAEA, 3 AIST and
4
Kwansei Gakuin Univ. (Japan)

PS-15-18 (Late News)
Behavior of the Potential-Induced Degradation for Photovoltaic Modules Fabricated using
Flat Mono-Crystalline Silicon Cells with Different Surface Orientations
S. Yamaguchi1, A. Masuda2 and K. Ohdaira1, 1JAIST and 2AIST (Japan)

Area 15: Photovoltaic Materials and Devices

PS-15-19 (Late News)
Degradation of Backsheets for Crystalline Photovoltaic Modules under Damp Heat
D. Kim, W. Hong and C. Oh, Korea Electronics Technology Institute (Korea)(20 papers)

PS-15-20 (Late News)
Optimization of Etching Paste Process by Screen Printing for Recycling Crystalline Silicon
Solar Wafer from End-of-life Photovoltaic Modules
J. Shin and J. Jeong, Korea Electronics Technology Institute (Korea)

PS-15-1
Exciton and Bandgap Energies of Hybrid Perovskite CH3NH3PbI3
Y. Nakamura1, J. Sano1, T. Matsushita1,3, Y. Kiyota2, Y. Udagawa2, H. Kunugita2,3, K. Ema2,3 and T.
Kondo1,3,4, 1Univ. of Tokyo, 2 Sophia Univ., 3 JST-ALCA and 4RCAST, Univ. of Tokyo (Japan)
PS-15-2
Optical Pumped Lasing in Solution Proccessed Perovskite Semiconducting Materials: Self
Assembled Microdisk Lasing
F. Sasaki, H. Mochizuki, Y. Zhou, Y. Sonoda and R. Azumi, AIST (Japan)
PS-15-3
Shape-Controlled Preparation of MAPbI3 Nanoparticles by Ionic Liquid-Assisted Simple
Spin-coating Method with Tunable Optical Absorption
Md. Shahiduzzaman, K. Yamamoto, Y. Furumoto, T. Kuwabara, K. Takahashi and T. Taima,
Kanazawa Univ. (Japan)
PS-15-4
Field Test of Dye-Sensitized Solar Cells by Utilizing a Power Delivery CMOS Integrated
Circuits
J. Miyamoto1, M. Sato1, H. Itoh1, M. Tanaka1, A. Kato1, S. Hasegawa1, Y. Suzuki2 and F. Munakata2,
1
Chubu Univ. and 2Tokyo City Univ. (Japan)- 37 -

Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

A-6: Optical Sensing(9:00-10:00)
Chairs: N. Iizuka (Toshiba)
S. Nishikawa(Mitsubishi
Electric)

C-6: III-V Photovoltaics
and Related Technologies(9:00-10:00)
Chairs: T. Hoshii(Univ. of Tokyo)
T. Negami(Panasonic)

D-6: Nanowire Synthesis
and Properties I(9:00-10:15)
Chairs: M. Arita(Univ. of Tokyo)
N. Fukata (NIMS)

E-6: 3D / TSV(9:00-10:30)
Chairs: T. Fukushima(Tohoku Univ.)
M. Takeyama(Kitami Inst. of
Tech.)

F-6: Advanced Memories
and Circuits(9:00-10:20)
Chairs: I. Akita(Toyohashi Tech)
Y. Mita(Univ. of Tokyo)

9:00 A-6-1 (Invited)
Si and SiN Biophotonic
Technology Platform,
Applied to Biosensing,Spectroscopy, and LensFree Imaging
W. Van Roy1, P. Neutens1,
T. Claes1, R. Jansen1, A.
Subramanian2, K. Jans1,
R. Vos1, J. O'Callaghan1,
D. Vercruysse1, R. Stahl1,
V. Mukund1, B. Du Bois1,
P. Helin1, A. Stassen1, S.
Severi1, D. Martens2, P.
Bienstman2, P. Deshpande1,
R. Baets2, A. Lambrechts1,
L. Lagae1,3, X. Rottenberg1
and P. Van Dorpe1,3, 1Imec,
2
Ghent Univ. and 3KU
Leuven (Belgium)

9:00 C-6-1 (Invited)
Recent Resultsfor Concentrator
Photovoltaics in JapanM. Yamaguchi1, T.
Takamoto2, K. Araki3 andN. Kojima1, 1Toyota Tech.
Inst., 2 Sharp Corp. and3
Daido Steel Corp. (Japan)

9:00 D-6-1 (Invited)
Nanowire Growth
as a Means for the
Monolithic Integrationof III-V Compound
Semiconductors on Si
L. Geelhaar, PaulDrude-Institut fuer
Festkoerperelektronik(Germany)

9:00 E-6-1 (Invited)
3D Interconnection ofSingle Micron Pitch
by Hybrid Bonding
Technology
M. Nimura1, M. Ohyama1,
S. Shoji1, M. Tamura2, T.
Enomoto2, A. Shigetou3 andJ. Mizuno1, 1Waseda Univ.,
2
Nissan Chemical Indus.
and 3NIMS (Japan)

9:00 F-6-1
39% tAC Improvement,
11% Energy Reduction,
32Kbit 1R/1W 2port
SRAM using Two-stage
Read Boost and WriteBoost after Read Sensing
SchemeY. Yamamoto1, S.
Moriwaki1, A. Kawasumi2,
S. Miyano3 and H.
Shinohara4, 1Socionext
Inc., 2 Toshiba Corp., 3
STARC and 4Waseda Univ.
(Japan)9:30 A-6-2
Stretchable Photonic
Crystal CoupledNanobeam Lasers forStretch Sensing
C. Wang, T.W. Lu and P.T.
Lee, NCTU (Taiwan)

9:30 C-6-2
Terahertz Emission from
Individual Subcells in a
Triple Junction Solar Cell
Excited by a Wavelength
Tunable Pulsed Laser
S. Hamauchi1, Y. Sakai1,
T. Umegaki1, A. Ito2, H.
Nakanishi2, I. Kawayama1,
H. Murakami1 and M.
Tonouchi1, 1Osaka Univ.
and 2SCREEN Holdings
Co., Ltd. (Japan)

9:30 D-6-2
Bridging the Gap
between the Nanometerscale Bottom-up andMicrometer-scale Topdown Approaches
for Site-defined InP/
InAs Heterostructure
Nanowires
G. Zhang1,2, M.
Takiguchi1,2, K. Tateno1,2
and H. Gotoh1, 1NTT BRL
and 2NTT Nanophotonics
Center (Japan)

9:30 E-6-2
Evaluation of 2-D Local
Stress Distribution in
Stacked IC Chip Using
Stress-Induced Retention
Time Modulation of
DRAM Cell Array
S. Tanikawa, H.
Hashiguchi, Y. Sugawara,
H. Kino, T. Fukushima, M.
Koyanagi and T. Tanaka,
Tohoku Univ. (Japan)

9:20 F-6-2
Pure CMOS One-Time
Programmable Memories
using a Combination ofGate-Ox Anti-fuse andPoly-Si Fuse
M. Matsumoto, K.
Tatsumura, K. Zaitsu andS. Yasuda, Toshiba Corp.
(Japan)9:45 A-6-3
Gold Bowtie Aperture
with Projected Pad
Underneath and Its
Capability in Optical
Sensing
P.Y. Chen, T.W. Lu and P.T.
Lee, NCTU (Taiwan)

9:45 C-6-3
Tandem Photovoltaicphotoelectrochemical
Device for Solar
Hydrogen Generation
S. Kosar1, Y. Pihosh2, I.
Turkevych3,4, K. Mawatari2,
J. Uemura2, Y. Kazoe2,
K. Makita3, T. Sugaya3,
T. Matsui3, D. Fujita4,
M. Tosa4, Y.M. Struk1, M.
Kondo3 and T. Kitamori2,
1
Chernivtsi National Univ.,2
Univ. of Tokyo, 3 AIST and
4
NIMS (Ukraine)

9:45 D-6-3
Structural and Magnetic
Characterizations ofVertical Ferromagnetic
MnAs/Semiconducting
InAs Heterojunction
Nanowires
R. Kodaira, K. Kabamoto,
S. Sakita and S. Hara,
Hokkaido Univ. (Japan)

9:50 E-6-3
Investigation of Low
Temperature Cu Pillar
Thermosonic Bondingfor 3D Integration
Applications
S.L. Lu1, Y.P. Huang1,
Y.S. Huang1, Y.H. Tseng2,
M.F. Shu2 and K.N. Chen1,
1
NCTU and 2ASE Group(Taiwan)

9:40 F-6-3
Digitally Calibrated
Dynamic LatchedComparator with
Stochastic Offset Voltage
Detection Technique for
Low-Power ADCs
T. Okazawa1, T. Kawano1,
M. Ishida1,2 and I. Akita1,
1
Toyohashi Tech and2
EIIRIS (Japan)

10:00 D-6-4
Effects of Polytypism
on the Thermoelectric
Properties of Si
Nanowires: aCombination of Density
Functional Theory and
Boltzmann Transport
Equation Calculations
T. Komoda, T. Akiyama, K.
Nakamura and T. Ito, Mie
Univ. (Japan)

10:10 E-6-4
Novel Integrationof Ultra-thin Al2O3
with Low-k Dielectricas Bi-layer Linerfor Capacitance
Optimization and Stress
Mitigation in Cu-TSV
L. Zhang1,2, H.Y. Li1, Y.
Shang2, W. Yoo3, H. Yu2
and C.S. Tan2, 1Inst. ofMicroelectronics, A*STAR,2
NTU and 3WaferMasters,
Inc. (Singapore)

10:00 F-6-4
No Reattaching and 8
Directions Detectable
Octagonal MOSFET
Stress Sensor
T. Harada, K. Kaiwa andY. Yamazaki, Yamagata
Univ. (Japan)- 38 -

1F 107a1F 107b

1F 108aWednesday, September 30
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

H-6: Quantum Optics(9:00-10:15)
Chairs: T. Tanamoto(Toshiba)
T. Nakaoka(Sophia Univ.)

J-6: SiC MOS(9:00-10:15)
Chairs: D. Hisamoto(Hitachi)C.-F. Huang(National Tsing
Hua Univ.)

K-6: Physics(9:00-10:00)
Chairs: N. Mori
(Osaka Univ.)
M. Hane(Renesas
Electronics)

M-6: Oxide Devices(9:00-10:00)
Chairs: K. Maezawa(Univ. of Toyama)
M. Kuzuhara(Univ. of Fukui)N-6: 2D Materials andBand Engineering(9:00-10:10)
Chairs: O. Nakatsuka(Nagoya Univ.)
T. Aoyama(Toshiba)

O-6: NAND Flash Device(9:00-10:30)
Chairs: K. Yamamoto(Toshiba)
K. Hamada(Micron Memory
Japan)

9:00 H-6-1 (Invited)
Quantum Communications
with Semiconductor
Devices
R.M. Stevenson, Toshiba
Research Europe (UK)9:00 J-6-1 (Invited)Threshold-Voltage
Instability in SiC
MOSFETs
A. Lelis, R. Green and D.
Habersat, U.S. Army Res.
Lab. (USA)

9:00 K-6-1
Modeling of Nonlinear
Thermal Resistance in
FinFET
B.K. Kompala1,
P. Kushwaha1, S.
Khandelwal2, J.P. Duarte2,
A.S. Medury2, C. Hu2 andY.S. Chauhan1, 1IIT Kanpurand 2Univ. of California
Berkeley (India)

9:00 M-6-1
Improved Performanceof α-IGZO Thin-Film
Transistors with an Au/
HfSiO/IGZO(O2-rich)
Schottky Source
C.H. Hung1, S.J. Wang1,
Y.H. Chen1, C.H. Wu2, C.
Lin1, P.Y. Liu1, Y.C. Tu1
and T.H. Lin1, 1NCKU
and 2Chung Hua Univ.
(Taiwan)

9:00 N-6-1 (Invited)High PerformanceElectronics Based on
Novel Two Dimensional
Materials
Y. Wu, Huazhong Univ. ofSci. and Tech. (China)

9:00 O-6-1 (Invited)
Future Prospects of Data
Storage Technologies:
NAND Flash Memory
and Storage Class
Memory Hybrid System
K. Takeuchi, Chuo Univ.
(Japan)9:30 H-6-2
Electron Spin CoherenceTime of NitrogenVacancy Center in
Diamond Improved byExternal Electric Field
S. Kobayashi1,2, H.
Morishita1, Y. Matsuzaki3,
S. Miwa1, Y. Suzuki1 and N.
Mizuochi1,2, 1Osaka Univ., 2
JST-CREST and 3NTT BRL(Japan)9:30 J-6-2
Threshold Voltage
Instability in 4H-SiC
MOSFETs with Nitrided
Gate Oxide Revealed by
Non-relaxation Method
M. Sometani1,2, D.
Okamoto2, S. Harada2, H.
Ishimori2, S. Takasu2, T.
Hatakeyama2, M. Takei1,2,
Y. Yonezawa2, K. Fukuda2
and H. Okumura2, 1Fuji
Electric Co., Ltd. and
2
AIST (Japan)

9:20 K-6-2
Ballistic and Quasiballistic Hole Transport
Properties in Germanium
Nanowire pMOSFETs
Based on an Extended"Top of the Barrier"Model
H. Tanaka, J. Suda andT. Kimoto, Kyoto Univ.
(Japan)9:15 M-6-2
Correlation between
Crystallinity andFormation of Oxygen
Vacancies in IGZO Comparison between
Crystal and Amorphous
Using First-Principles
Calculations T. Hiramatsu, M.
Nakashima, E. Kikuchi, N.
Ishihara, M. Tsubuku, K.
Dairiki and S. Yamazaki,
Semiconductor Energy
Lab. Co., Ltd. (Japan)

9:30 N-6-2
Two Dimensional SiBased Semiconductor
Si1-YCY: C Atom
Induced Band Structure
Modulation at Visible
RegionT. Mizuno1, Y. Nagamine1,
U. Omata1, Y. Suzuki1, W.
Urayama1, T. Aoki1 and T.
Sameshima2, 1Kanagawa
Univ. and 2Tokyo Univ. ofAgri. & Tech. (Japan)

9:30 O-6-2
Effects of Cell Vth State
and Number of Traps on
Statistical Distribution of
Random Telegraph Noisein Scaled NAND Flash
MemoryT. Tomita and K. Miyaji,
Shinshu Univ. (Japan)

9:45 H-6-3
Photon Correlation
Study of Background
Suppressed Single InGaN
Nanocolumns
T. Yamamoto, M. Maekawa,Y. Imanishi, S. Ishizawa, T.
Nakaoka and K. Kishino,
Sophia Univ. (Japan)

9:45 J-6-3
Effect of Nitridation for
SiO2/SiC Interface on
Defects Properties near
Conduction Band Edge
W. Takeuchi1, K.
Yamamoto2, M. Sakashita1,
T. Kanemura2, O.
Nakatsuka1 and S. Zaima1,
1
Nagoya Univ. and2
DENSO Corp. (Japan)

9:40 K-6-3
Experimental Study on
Interface Region of TwoDimensional Si Layers
T. Mizuno1, Y. Suzuki1, R.
Kikuchi1, A. Suzuki1, M.
Yamanaka1, Y. Nagamine1,
T. Aoki1 and T. Maeda2,
1
Kanagawa Univ. and
2
AIST (Japan)

9:30 M-6-3
Ideal Deep-Subthreshold
Characteristics in C-Axis
Aligned Crystalline
Oxide Semiconductor
FET
D. Matsubayashi, M.
Tsubuku, T. Takeuchi, S.
Matsuda, K. Ohshima, T.
Tanaka, A. Shimomura, M.
Sakakura, Y. Yamamotoand S. Yamazaki,
Semiconductor Energy
Lab. Co., Ltd. (Japan)

9:50 N-6-3
Chemical Trend of
Isoelectronic Traps in
Si Tunnel FET; FirstPrinciples Study
S. Iizuka and T. Nakayama,
Chiba Univ. (Japan)

9:50 O-6-3
Improvement of Cell VT
Distribution & Program
Disturbance of NAND
Flash Device by Using
Tilt Implantation for Cell
Junction Counter Doping
D.Y. Kim, N.K. Kim, K.T.
Lee, H.Y. Shim, S.K. Park,
B.K. Kim, K.B. Lee, H.Y.
Chang, K.O. Ahn and
J.W. Kim, SK Hynix Inc.
(Korea)10:00 H-6-4
Tolerance of Photon
Entanglement in a
Droplet Epitaxial
Quantum Dot Grown on(111)A Surface
H. Nakajima1, X. Liu2,
N. Ha2, R. Takemoto1, H.
Kurosawa1, T. Mano2, T.
Kuroda2, K. Sakoda2, I.
Suemune1 and H. Kumano1,
1
Hokkaido Univ. and
2
NIMS (Japan)

10:00 J-6-4
Origin of Low Channel
Mobility and Threshold
Voltage Instability of
SiC-MOSFETs
H. Shiomi1, H. Kitai1, M.
Tsujimura1, Y. Kiuchi1,
D. Nakata2, S. Ono2, K.
Kojima1, K. Fukuda1, K.
Sakamoto1, K. Yamasaki2
and H. Okumura1, 1AIST
and 2New JRC (Japan)

9:45 M-6-4
Trench Gate Process
for 60-nm-Node C-Axis
Aligned Crystalline InGa-Zn-O Field-EffectTransistors
Y. Asami, A. Shimomura, Y.
Okazaki, D. Matsubayashi,
M. Tsubuku, M. Kurata, S.
Okamoto, S. Sasagwa, T.
Moriwaka, T. Kakehata,
Y. Yakubo, K. Kato,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Co., Ltd.
(Japan)- 39 -

10:10 O-6-4
A New High Density
FinFET OTP Technology
P.C. Peng1, Y.Z. Chen1,
H.W. Pan1, W.Y. Hsiao2,
K.H. Chen2, Y.H. Kuo2,
C.P. Lin2, B.Z. Tien2, T.S.
Chang2, Y.C. King1 andC.J. Lin1, 1National Tsing
Hua Univ. and 2TSMC(Taiwan)

1F 108b

Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107aA-7: III-V Devices andRelated Technologies(10:45-12:30)
Chairs: T. Isu(Tokushima Univ.)
T. Shimizu(PETRA)

C-7: Crystalline Silicon
Photovoltaics(10:45-12:30)
Chairs: M. Isomura(Tokai Univ.)
L.-S.Hong(TECRO in Japan)

D-7: Nanowire Synthesis
and Properties II(10:45-12:30)
Chairs: H. Tatsuoka(Shizuoka Univ.)
A. Kikuchi(Sophia Univ.)

E-7: Advanced Circuits
and MEMS Integration(10:45-12:35)
Chairs: J. C. Guo (NCTU)
M. Ueki(Renesas
Electronics)

F-7: Biosensors(10:45-12:30)
Chairs: C.-S. Lai(Chang Gung
Univ.)
T. Tanaka(Tohoku Univ.)

G-7: Organic Devices II(10:45-12:45)
Chairs: K. Fujita(Kyushu Univ.)
T. Shimada(Hokkaido Univ.)

10:45 A-7-1
Heterogeneous Quantum
Dots/Silicon Photonics
Wavelength Tunable
Laser Diode
T. Kita1, N. Yamamoto2,
T. Kawanishi2 and H.
Yamada1, 1Tohoku Univ.
and 2NICT (Japan)

10:45 C-7-1
Formation of Thermally
Stable a-Si Passivation
Films using Liquid Si
C. Guo1, K. Ohdaira1,
H. Takagishi2 and T.
Shimoda1, 1JAIST and2
Fukushima Univ. (Japan)

10:45 D-7-1 (Invited)
Self-assembled
Functional
Nanocomposites
Y.H. CHU, NCTU (Taiwan)

10:45 E-7-1 (Invited)
Manufacturing
Technology of All-solidstate Thin-film Lithium
Secondary Battery forStand-alone MEMS/
Sensor Applications
K Suu, ULVAC, Inc.
(Japan)10:45 F-7-1 (Invited)
Ultrasensitive Sensors
Using Enhanced Surface
Plasmon Resonancesin Capped Metallic
Nanostructures
K.L. Lee1 and P.K. Wei1,2,
1
Academia Sinica and2
National Yang-Ming Univ.
(Taiwan)

10:45 G-7-1 (Invited)
Controlling Light at the
Nano-Scale via Molecular
Tunnel Junctions
C.A. Nijhuis, NUS(Singapore)

11:00 A-7-2
Waveguide InGaAs
Metal-semiconductormetal Photodetector
Monolithically Integrated
with InP Grating
Coupler on III-V CMOS
Photonics Platform
Y.P. Cheng1, 2, Y. Ikku1, 2, M.
Takenaka1, 2 and S. Takagi1, 2,
1Univ. of Tokyo and 2JSTCREST (Japan)

11:00 C-7-2
Investigation of Interface
State Density and Fixed
Charge of SrxSiOx+2 on
the 2×1 Sr-reconstructed
Si Substrate
S. Taniwaki1, Y. Hotta1,3, H.
Yoshida1,3, K. Arafune1,3,
A. Ogura2,3 and S. Satoh1,3,
1
Univ. of Hyogo, 2 Meiji
Univ. and 3JST-CREST(Japan)

11:15 D-7-2
Fabrication of Vertical
Ge Nanowires on
Amorphous Substrates
by Combining Auseeded Chemical-Vapor
Deposition with Alinduced Crystallization
M. Nakata1, K. Toko1, W.
Jevasuwan2, N. Fukata2
and T. Suemasu1, 1Univ.
of Tsukuba and 2NIMS(Japan)

11:15 E-7-2
Novel Gain-Controlled
Sensor Circuits Designed
by Multi-physics
Simulation for CMOSMEMS Accelerometer
T. Konishi1, D. Yamane2,4,M. Takayasu2,4, S. Dosho2,4,
N. Ishihara2,4, K. Masu2,4,
H. Toshiyoshi3,4 and K.
Machida1,2,4, 1NTT AT, 2
Tokyo Tech, 3 Univ. ofTokyo and 4JST-CREST(Japan)

11:15 F-7-2
An Implantable Needlelike Shaped Device
and Its Performance inLensless Fluorescence
Imaging of BiologicalTissues
H. Takehara, Y. Ohta, M.
Motoyama, M. Haruta,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

11:15 G-7-2
Detection of Mercury(II) Ion in Water using
an Organic Field EffectTransistor with a
Cysteine-functionalizedGold ElectrodeT. Minami, T. Minamiki
and S. Tokito, Yamagata
Univ. (Japan)

11:15 A-7-3
1.3 μmPhotoluminescencefrom InAs/GaAs
Quantum Dots on
CMOS-compatible(001) Silicon by Metalorganic Chemical Vapor
Deposition
Y. Wan, Q. Li, Y. Geng and
K.M. Lau, HKUST (China)

11:15 C-7-3
Temperature-Dependent
Minority Carrier
Lifetime of Crystalline
Silicon Wafers Passivatedby High Quality
Amorphous Silicon Oxide
M. Inaba, S. Todoroki, K.
Nakada and S. Miyajima,
Tokyo Tech (Japan)

11:30 D-7-3
Catalyst-free Growthof InxGa1-xAs/InAs
Coaxial Nanorod
Heterostructures on
Graphene Layers Using
Molecular Beam Epitaxy
Y. Tchoe, J. Jo, M. Kim andG.-C. Yi, Seoul National
Univ. (Korea)

11:35 E-7-3
Zeolite-trench-embedded
Micro Cantilevers for
CMOS Strain-gauge
Integrated Gas Sensors
S. Inoue1, R. Setoguchi1, M.
Denoual2, S. Mintova2 andY. Mita1, 1Univ. of Tokyoand 2Normandie Univ.
(Japan)

11:30 F-7-3
In situ Monitoring ofExtracellular Matrix
Based on Chondrocytes
Behavior using
Biologically-coupledField Effect Transistor
H. Satake1, A. Saito1, T.
Kajisa2, S. Mizuno3 and T.
Sakata1, 1Univ. of Tokyo,
2
PROVIGATE Inc. and3
Harvard Medical School(Japan)

11:30 G-7-3
Highly Flexible
Complementary Inverterwith Pentacence/a-IGZO
Hybrid Thin Film
Transistors
Z. Pei, H.C. Lai and B.J.
Tzeng, National Chung
Hsing Univ. (Taiwan)

11:30 A-7-4
Optical and Electronic
Properties of Ga(N,As,P)
Quantum Wells on Silicon
for Laser Application
S. Gies, S. Karrenberg, M.
Zimprich, T. Wegele, C.
Kruska, A. Beyer, W. Stolz,
K. Volz and W. Heimbrodt,
Philipps Univ. Marburg(Germany)

11:30 C-7-4
Investigation of New
Stacking Surface
Passivation Structureswith Interfacial Tuning
Layers on p-type
Crystalline Silicon for
Solar Cell Applications
N. Ikeno1, 4, T. Katsumata1, 2,
H. Yoshida3, 5, K. Arafune3, 5,
S. Satoh3, 5, T. Chikyow2 andA. Ogura1, 5, 1Meiji Univ., 2
NIMS, 3 Univ. of Hyogo, 4
JSPS Research Fellow and5
JST-CREST (Japan)

11:45 D-7-4
Two Different
Mechanisms for Aufree Growth of InAsSb
Nanowires on Si
Substrate
W.N. Du1, X.G. Yang1, H.Y.
Pan2, X.Y. Wang1, X.H.
Ji1, Z.G. Wang1, H.Q. Xu2
and T. Yang1, 1Chinese
Academy of Sciences and2
Peking Univ. (China)

11:55 E-7-4
S-Parameter
Characterization andLumped-Element
Modelling of mm-Wave
Single-Drift IMPATT
Diode
W. Zhang1, Y. Yamamoto2,
M. Oehme1, K. Matthies1,
B. Tillack2, 3, E. Kasper1
and J. Schulze1, 1Univ.
of Stuttgart, 2 IHPMicroeletronics and 3TU
Berlin (Germany)

11:45 F-7-4
Robust and HighSensitive Myoelectric
Signal Detection utilizing
Stochastic Resonancewith Carbon Nanotube
Composite Paper-based
Surface Electrodes
K. Shirata1, S. Kasai1,
T. Oya2, Y. Hagiwara3,
S. Kaeriyama3 and H.
Nakamura3, 1Hokkaido
Univ., 2 Yokohama National
Univ. and 3STARC (Japan)

11:45 G-7-4
Anodization Patterningfor Organic Electronic
Circuits with Low
Operation Voltage
T. Yokota1,2, T. Sekitani2,3
and T. Someya1,2, 1Univ. ofTokyo, 2 JST-ERATO and3
Osaka Univ. (Japan)

11:45 A-7-5
The Influence of III-V
on Insulator Structure
on Quantum Well
Intermixing
S. Takashima1,2, Y. Ikku1,2,
M. Takenaka1,2 and S.
Takagi1,2, 1Univ. of Tokyoand 2JST-CREST (Japan)

11:45 C-7-5
Catalytic Dopingof Phosphorus andBoron Atoms onto
HydrogenatedAmorphous Silicon Films
J. Seto1,2, K. Ohdaira1,2 and
H. Matsumura1,2, 1JAIST
and 2JST-CREST (Japan)

12:00 D-7-5
Formation of Self-aligned
Pore Arrays on n-GaN
Substrates by Photoassisted Electrochemical
Etching Process
Y. Kumazaki, T. Sato andZ. Yatabe, Hokkaido Univ.
(Japan)12:15 E-7-5
Analysis and Reductionof Leakage Current of
2kV Monolithic Isolator
with Wide Trench Spiral
Isolation Structure
Y. Takeuchi, R. Kuroda andS. Sugawa, Tohoku Univ.
(Japan)

12:00 F-7-5
Respiratory Sensor
Measuring CapacitanceConstructed Across Skin
M. Terasawa, S. Kumagaiand M. Sasaki, Toyota
Tech. Inst. (Japan)

12:00 G-7-5
Pseudo-CMOS Gain
Enhancement by PostAnnealing Organic
Circuits on Ultrathin
Plastic Substrates
A. Reuveny1,2, T. Yokota1,2,
S. Lee1,2, R. Shidachi1,2,
T. Sekitani1,2,3 and T.
Someya1,2, 1Univ. of Tokyo,
2
JST-ERATO and 3Osaka
Univ. (Japan)- 40 -

1F 107b

1F 108aWednesday, September 30
2F 201

2F Small Hall

2F 204

H-7: Quantum Devices(10:45-12:30)
Chairs: A. Oiwa
(Osaka Univ.)
T. Nakaoka(Sophia Univ.)

K-7: Characterization II(10:45-12:05)
Chairs: N. Sugii (Hitachi)
T.-S. Chao (NCTU)

M-7: III-V Materials &Devices(10:45-12:30)
Chairs: N. Hara
(Fujitsu Labs.)
T. Suzuki (JAIST)

O-7: ReRAM 2(10:45-12:05)
Chairs: K. Kinoshita(Tottori Univ.)
H. Hwang(POSTECH)

10:45 H-7-1
Determination of Phonon
Decay-rate in p-type Si
under Fano Resonanceby Measurements of
Coherent Phonons with
Femto-second Laser
PulsesK. Kato, K. Oguri, H.
Sanada, T. Tawara, T.
Sogawa and H. Gotoh,
NTT BRL (Japan)

10:45 K-7-1
Reliability of Improved
CAAC-IGZO FETSatisfying NOSRAM
Performance
T. Murakawa, K. Ohshima,
M. Tsubuku, D. Shimada,N. Kamata, T. Tanaka, A.
Shimomura, M. Sakakura,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Co. Ltd.
(Japan)10:45 M-7-1 (Invited)THz Devices Based on 2D
Electron Systems
H.G. Xing, R. Yan, B. Song,J. Encomendero and D.
Jena, Cornell Univ. (USA)10:45 O-7-1
Low Power Switching of
Si-doped Ta2O5 ReRAM
for High Density Memory
Application
B.Y. Kim, K.J. Lee, S.O.
Chung, S.G. Kim and
H.S. Kim, SK Hynix Inc.
(Korea)11:00 H-7-2
Dynamic creation of a
topologically-ordered
Hamiltonian using spinpulse control in the
Heisenberg model
T. Tanamoto1, K. Ono2,
Y.X. Liu2,3 and F. Nori2,4,
1
Toshiba Corp., 2 RIKEN, 3
Tsinghua Univ. and 4Univ.
of Michigan (Japan)

11:05 K-7-2
Degradation
Investigation ofHigh-k/Metal GatenMOSFETs by 3D KMCwith Multiple Traps
Interactions
Y. Li, H. Jiang, Z.Y. Lun,
Y.J. Wang, P. Huang, H.
Hao, G. Du, X. Zhang
and X.Y. Liu, Peking Univ.
(China)11:15 M-7-2
Electrical Characteristicsof Au/Ni Schottky Diodes
on Cleaved m-Plane
Surfaces of Free-Standing
n-GaN Substrates
M. Naganawa1, T. Aoki1, T.
Mishima2 and K. Shiojima1,
1
Univ. of Fukui and 2Hosei
Univ. (Japan)

11:05 O-7-2
Interface Engineered
HfO2-Based 3D Vertical
Resistive Random Access
Memory with FormingFree Operation
B. Hudec1, I.T. Wang1,
W.L. Lai1, C.C. Zhang1,
T.H. Hou1, P. Jancovic2,
K. Frohlich2, M. Micusik2
and M. Omastova2, 1NCTU
and 2Slovak Academy of
Sciences (Taiwan)

11:15 H-7-3 (Late News)
Withdrawn

11:25 K-7-3
Estimation of Soft Error
Tolerance According to
the Thickness of Buried
Oxide and Body Bias 28nm and 65-nm in FD-SOI
Processes by a MonteCarlo Simulation
K. Zhang, J. Yamaguchi,
S. Kanda, J. Furuta and K.
Kobayashi, Kyoto Inst. of
Tech. (Japan)

11:30 M-7-3
Net Acceptor TypeTrap Density in Semiinsulating GaN Layers
T. Tanaka, N. Ito, M.
Akutsu, K. Chikamatsu, S.
Takado and K. Nakahara,
ROHM Co., Ltd. (Japan)

11:25 O-7-3
Investigation of Carbon
Nanotube Memory
Cell Array Program
Characteristics
S.Y. Ning1, T.O. Iwasaki1,
E. Yanagizawa1, S.
Hachiya1, G. Rosendale2,
M. Manning2, D. Viviani2,
T. Rueckes2 and K.
Takeuchi1, 1Chuo Univ. and2
Nantero Inc. (Japan)

11:30 H-7-4
Controlled Photon
Emission of Colloidal
PbS Quantum Dot byUsing Photonic Dot Madeof Optical Polymer andSiliconT. Nozaka and K. Mukai,
Yokohama National Univ.
(Japan)

11:45 K-7-4
Impact of Hole Shape on
Program Vt Distribution
in Gate-All-Around 3D
Flash Memory
C.H. Cheng, C.W. Lee,
K.W. Wu, S.H. Ku, N.K.
Zous, L. Liu, S.W. Huang,
Y.W. Chang, I.J. Huang,
A. Suzuki, T.C. Lu, W.P. Lu
and K.C. Chen, Macronix
Int'l. Co. Ltd. (Taiwan)

11:45 M-7-4
GaAs/In0.2Ga0.8As FinArray-Esaki Tunnel
Diodes Fabricated on(001) Silicon by Aspect
Ratio Trapping
Q. Li, Y. Han and K.M.
Lau, HKUST (China)

11:45 O-7-4
A 1.0 V Operation, 65%
Faster Set/Reset Voltage(3V) Generator for
3D-integrated ReRAM
and NAND Flash Hybrid
Solid-State Drive
M. Tanaka, S. Hachiya,
T. Ishii, S.Y. Ning and
K. Takeuchi, Chuo Univ.
(Japan)

11:45 H-7-5 (Late News)
Characterization and
Topological Properties of
Bi2Se3 Thin Film Grown
by using Physical Vapor
Deposition
Y.C. Lin, Y.S. Chen, C.C.
Lee, J.K. Wu, H.Y. Lee
and Y.H. Chang, National
Taiwan Univ. (Taiwan)

2F 202

12:00 M-7-5
The Effects of AlN
Passivation Layer toMetal Work-Function
and Band Alignmentof Metal Oxide
Semiconductor Devices
H.B. Do, Q.H. Luc, M.T.H.
Ha, S.H. Huynh, Y.C. Lin
and E.Y. Chang, NCTU
(Taiwan)- 41 -

2F 206

2F 207

1F 108b

Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

A-7: III-V Devices andRelated Technologies

C-7: Crystalline Silicon
Photovoltaics

D-7: Nanowire Synthesis
and Properties II

F-7: Biosensors

G-7: Organic Devices II

12:00 A-7-6
Fabrication of Two-Color
Surface Emitting Deviceof a Coupled Cavity
Structure with InAs
QDs Formed by WaferBonding
H. Ota, C. Harayama, T.
Maekawa, X.M. Lu, N.
Kumagai, T. Kitada and
T. Isu, Tokushima Univ.
(Japan)

12:00 C-7-6
Activation of Silicon
Implanted with
Phosphorus and Boron
Atoms by Microwave
Rapid Annealing
S. Kimura, M. Hasumi, K.
Ota and T. Sameshima,
Tokyo Univ. of Agri. &Tech. (Japan)

12:15 D-7-6
X-ray Diffraction Studyof Evolution of Polytypes
in Au-assisted GaAs
Nanowires
M. Takahasi1,2, M. Kozu1,2
and T. Sasaki1, 1JAEA and2
Univ. of Hyogo (Japan)

12:15 F-7-6
Monitoring ofHydroxyapatite Crystal
Formation using Field
Effect Transistor
T. Kajisa1 and T. Sakata2,
1
PROVIGATE Inc. and2
Univ. of Tokyo (Japan)

12:15 G-7-6 (Invited)
Organic-Assisted
Oriented Attachment ofSilver Nanosheets
S. Ekgasit and P.
Jangtawee, Chulalongkorn
Univ. (Thailand)

12:15 A-7-7
Demonstration of TwoWavelength Lasing ina GaAsP Ring/FabryPerot Composite Cavity
Semiconductor Laser
A.K. Saha and T. Suhara,
Osaka Univ. (Japan)

12:15 C-7-7
Combination
Accelerating Test
for Crystalline Si
Photovoltaic Modules
A. Masuda1, C. Yamamoto1,
N. Uchiyama1, K. Ueno2
and T. Yamazaki2, 1AIST
and 2Choshu Industry Co.,
Ltd. (Japan)- 42 -

1F 107a1F 107b

1F 108aWednesday, September 30
2F 201

2F 202

2F Small Hall

2F 204

H-7: Quantum Devices

M-7: III-V Materials &Devices

12:00 H-7-6 (Invited)
Ultraclean Carbon
Nanotube Quantum
Dots Coupled toSuperconducting
Impedance Matching
Circuits
M. Jung1, T. Hasler1,
V. Ranjan1, G. Puebla
Hellmann1,2, A. Wallraff2
and C. Schonenberger1,
1
Univ. of Basel and 2ETH
Zurich (Switzerland)

12:15 M-7-6
Withdrawn- 43 -

2F 206

2F 207

1F 108b

RUMP SESSIONS		

September 29 (Tuesday) 19:10 - 20:40 1F Middle-Sized Hall A, B

RUMP SESSION A (Middle-Sized Hall A):“Can we change the world by Steep-Slope devices?”
The Big Data Age has come.
In this era, processors are required to furnish high performance at ultra-low operation voltage in order tomanage enormous sensing data and execute real time processing with extremely low energy consumption. Thus
drastic innovations in transistors and logic circuits, such as Steep-Slope devices and stacked logic circuits,
are anticipated. This Rump session invites 5 distinguished researchers, introduces the status of developmentsof Steep-Slope devices and stacked logic circuits, and presents an opportunity to discuss the future of logic
devices.
Organizer:
Moderator:
Panelists:

Toshiro Hiramoto (The University of Tokyo)
Shinji Migita (AIST)Ru Huang (Peking University)
Shigeru Kawanaka (Toshiba Corporation)
Masaharu Kobayashi (The University of Tokyo)
Calro Reita (CEA-LETI)
Shinichi Takagi (The University of Tokyo)

RUMP SESSION B (Middle-Sized Hall B):“Future materials and devices for solar-based energy systems: from power generation to energy
storage”
Rapid increase in the installation of photovoltaic convinced is a promising progress of a solar-based energy
system which is independent from fossil fuel. Large-scale installation of renewable power generation, however,
introduces temporal and spatial fluctuation, which highlights the importance of energy storage and power
management. Solid-state devices and related technology must play an essential role for such purposes. Thissession will introduce ongoing research and development on devices and materials for solar energy harvesting,storage and management and future direction will be discussed.
Organizer:
Moderator:
Panelists:

Takashi Kita (Kobe University)
Masakazu Sugiyama (The University of Tokyo)
Hiroji Ebe (Fujitsu Labs. Ltd.)
Mutsuko Hatano (Tokyo Institute of Technology)
Kazuhiro Ohkawa (Tokyo University of Science)- 44 -SHORT COURSES

September 27 (Sunday) 14:00 - 18:30 1F Middle-Sized Hall A, B

Short Course A (Middle-Sized Hall A):
Trends and Challenges of Non-Volatile Memory Technologies in the Big-Data Era
Organizer: Masumi Saitoh (Toshiba Corporation)
There is a growing demand for high-density non-volatile memory in the Big-Data era. Non-volatile memory is
being introduced into each memory hierarchy (data storage, code storage, main memory, cashe, etc.) to achieve
low-power and high-speed LSI system. In this course, five excellent lectures give a review on the trends andchallenges of promising non-volatile memory technologies.
14:00-14:05 Introduction on topics from organizer
14:05-14:55 “Evolution of NAND Flash Devices for Overcoming the Technological Barriers”
		
Dr. Youngwoo Park (Samsung Electronics Co., Ltd)
14:55-15:45 “Recent advances and challenges in ReRAM-related technologies”
		Dr. Hiroyuki Akinaga (AIST)
15:45-16:35 “Phase Change Memory (PCM) -from the fundamental to the spintronics-”
		Dr. Junji Tominaga (AIST)
Break (15 min.)16:50-17:40 “Process Development of STT-MRAM for Embedded Cache Memory”
		Dr. Toshihiro Sugii (Fujitsu Laboratories Ltd.)
17:40-18:30 “Technology trends and applications of embedded-STT-MRAM from big data to IoT”
		Dr. Shinobu Fujita (Toshiba Corporation)

Short Course B (Middle-Sized Hall B):“Fundamentals and Applications of Two-Dimensional Materials”
Organizer: Shintaro Sato (Fujitsu Laboratories Ltd.)This short course deals with emerging two-dimensional materials, especially transition metal dichalcogenides(TMDCs), such as MoS₂ and WSe₂. There are four excellent lectures focusing on physical, electrical, andoptical properties of TMDCs, as well as their growth technology. Application of TMDCs to electronic andoptical devices is also described. Possible application of TMDCs to ultra-short-channel transistors at the end ofroadmap is also discussed.
14:00-14:05 Introduction on topics from organizer
14:05-15:05 “2D Crystals for Nanoelectronics and Beyond…..”
		
Prof. Kaustav Banerjee (University of California, Santa Barbara)
15:05-16:05 “Transport properties of van der Waals junctions of 2D layered materials”
		Prof. Tomoki Machida (The University of Tokyo)
Break (15 min.)16:20-17:20 “Fundamental optical properties and device application in atomically thin layered materials”
		Prof. Kazunari Matsuda (Kyoto University)
17:20-18:20 “CVD growth of atomically thin transition metal dichalcogenides and their heterostructures”
		Prof. Yasumitsu Miyata (Tokyo Metropolitan University)- 45 -PRESENTATION GUIDELINES
Oral Presentation:
Time Schedule

Total session time Presentation time
Discussion time
Invited30 min.
25 min.
5 min.
Regular-1: Area 1-5
20 min.
15 min.
5 min.
Regular-2: Area 6-15
15 min.
10 min.
5 min.
Late News
15 min.
10 min.
5 min.
BELL: First: Warning, Second: End of speech, Third: End of the discussion.
Audio-Visual Equipment
The following equipments are ready at each session room during SSDM2015:* LCD projector* PC (laptop computer, Windows 7 Professional) with PowerPoint 2013 and PDF Adobe Reader XI* Projection laser pointerPresenters can check their presentations in Preview Room on the second floor (see floor guide on page 76).
Copy Your Presentation File
Please copy your presentation file to the PC equipped in each session room. All the oral presenters are asked
to bring their presentation files with own USB thumb drive. It is the presenter’s responsibility to copy his/her presentation file as soon as possible in each session room at any break well in advance to the sessionof presentation. If the session chair cannot find your presentation file at the beginning of the session, yourpresentation will be withdrawn. The file must be compatible with Microsoft PowerPoint or Adobe Acrobat on
Microsoft Windows indicated above.

Poster Presentation:

Presenting Your Poster
Poster sessions are scheduled on Tuesday, September 29 from 13:30 to 15:30 at Main Hall A, B. You arerequested to put your poster on the board by 13:00 on September 29. Poster boards with identifying labelsand pushpins will be available on September 29 from 10:00. After the session, you must immediately remove
your posters by 17:00 on September 29. Please note that after 17:00 all remaining posters will be destroyed.
Size of a poster board is 1,800mm wide and 2,100mm high. Please clearly display the paper title, author names
and affiliations on the poster. The identifying label indicates only paper number. You are requested to stay nearby their posters during the poster session for discussions.
Short Oral Presentation
All poster presenters must give the short oral presentations in Short Presentation session scheduled on
September 29. 11:00 - 12:00. The presentation time is 2 minutes, including the time needed to move on to thenext presenter. Submitted presentation file has been already copied to the PC equiped in the session room and isready for presentation. For smooth progress of the session, the next presenter is asked to wait nearby in line for
their turn. Only a PC projector will be available.
Short oral presentations will be held as follows:
September 29, 2015, 11:00 am - 12:00 am
Area 1 (PS-1) 2F 206
Area 6 (PS-6) 2F 204
Area 2 (PS-2) 1F 107a
Area 7 (PS-7) Mid-sized Hall A
Area 3 (PS-3) 2F Small Hall
Area 8 (PS-8) 1F 108a
Area 4 (PS-4) 2F 207
Area 9 (PS-9) 2F 201
Area 5 & 11 (PS-5, PS-11) 1F 107b
Area 10 & 15 (PS-10, PS-15) 1F 101

Confidentiality:

All presentation data will be completely deleted after the session.
- 46 -

Area 12 (PS-12) 1F 108b
Area 13 (PS-13) 1F 102
Area 14 (PS-14) 2F 202

EXHIBITION

September 28-30 1F

Exhibitors:
ADVANTEST CORPORATIONCRESTEC CORPORATION
Finetech Nippon Co., Ltd
Gas-Phase Growth Ltd.
GenISys K. K.
IRIE KOKEN CO., LTD.
JEOL Ltd.
Nagase Techno-Engineering Co., Ltd.
NTT Advanced Technology Corporation
OLYMPUS CORPORATION
QuantumWise Japan KKSCIVAX Corporation
Silvaco Japan Co., Ltd.
TNS Systems LLC
The Japan Society of Applied Physics- 47 -AUTHOR INDEX
A

Abe, T.------------------------------------------------F-3-3Abe, Y.------------------------------------------------F-3-3
Acosta Alba, P.------------------------------------- N-1-1
Adan, A.O.------------------------------------------M-3-5
Ahn, K.O.------------------------------------------- O-6-3
Aichi, S.----------------------------------------- PS-12-12
Akahane, K.------------------------------- A-3-5, G-3-3
Akasaka, T.----------------------------------------PS-8-7
Akasawa, F.----------------------------------------- K-5-2
Akazawa, M.------------------------------------ PS-1-15
Akei, Y.------------------------------------------ PS-12-19
Akihara, Y.-----------------------------------------PS-5-6
Akita, I.-------------------------------- PS-11-13L, F-6-3
Akiyama, T.-----------------PS-7-24, PS-13-20, D-6-4
Aktas, O.--------------------------------------------M-4-1
Akutsu, M.-------------------------------- M-4-2, M-7-3
Alain, F.--------------------------------------------- N-2-2
Alattili, A.------------------------------------------- A-5-1
Alimudin, M.-------------------------------------- PS-5-5
Amano, H.---------------------------------------- PL-2-1
Amemiya, T.-----------------------------PS-7-10, D-2-5
Amemiya, Y.------------ PS-11-4, A-2-3, A-3-6, F-5-4
Amkreutz, D---------------------------------------- C-3-1
Amornkitbamrung, V.---------------- PS-8-27, G-3-2L
An, F.------------------------------------- PS-5-1, PS-5-2
Anda, Y.---------------------------------------------M-2-3
Ando, H.------------------------------------------- PS-2-2Ando, K.---------------------------------------- PS-12-10
Ando, Y.-------------- PS-14-19L, A-2-2, P-1-6, P-3-5
Ang, D.S.------------------------------------------- O-1-2
Ang, K.S.------------------------------------------ PS-6-4
Ang, K.W.------------------------------------------- D-2-2
Anh, L.D.--------------------------------------------P-3-4
Aoki, J.---------------------------------------------- E-4-3
Aoki, T.-------------------G-1-4, K-5-2, K-6-3, M-7-2,
N-6-2, O-4-3
Aono, M.---------------------------------- PS-4-7, B-4-3
Aoyagi, K.-------------------------------------- PS-14-16
Arafune, K.---------------------------------C-7-2, C-7-4
Arai, H.------------------------------------------- PS-1-18
Arai, M.-------- PS-14-5, PS-14-11, PS-14-12, B-4-2
Arai, S.------------------------------------------- PS-7-10
Araidai, M.--------------------------------------- PS-1-17
Arakawa, Y.------- A-1-5, A-3-2, A-5-1, A-5-2, A-5-3
Araki, A.-------------------------------------------- E-4-1
Araki, H.-------------------------------------------- C-3-3
Araki, K.-------------------------------------------- C-6-1
Araki, M.---------------------------------------- PS-12-11
Aretouli, K.E.---------------------------------- PS-13-13
Arita, M.----------------------------------- H-3-2, O-3-2
Ariyoshi, K.------------------------------------------ J-1-1
Arnaud, L.------------------------------------------ K-4-3
Arnaud, S.------------------------------------------- N-5-3
Arvet, C.----------------------------------------- PS-2-13
Asada, K.---------------------------------------------F-1-4
Asada, M.-------------------------------------------M-1-4
Asada, S.------------------------------------------- PS-3-8
Asahi, T.------------------------------------------ PS-7-22
Asami, Y.------------------------------------------- M-6-4
Asano, H.----------------------------- PS-5-8, PS-12-12
Asano, T.---------------------------PS-1-9, G-4-1, J-2-1
Asenov, A.----------------------------------------- PS-3-1
Ashida, A.-----------------------------PS-4-1, PS-8-28L
Ashizawa, Y.---------------------------------------- A-2-1
Asubar, J.----------------------------------------- M-2-2L
Ateto, E.O.-------------------------------------- PS-15-11
Atsumi, T.------------------------------------------- O-1-4
Aussenac, F.------------------------------- K-4-3, N-1-1
Azumi, R.---------------------------------------- PS-15-2

BBaba, A.------------------------------------------ PS-14-4
Bae, H.J.-------------------------------------------- K-3-4Bae, S.Y.-------------------------------------------PL-2-1
Baets, R.--------------------------------------------- A-6-1
Bai, B.-------------------------------------------- PS-7-15
Bai, X.----------------------------------------------- O-4-4Bain, J.A.------------------------------------------- H-3-4

Balestra, F.--------------------------------- K-4-2, N-2-2
Banerjee, W.------------------------------------- PS-4-10
Banno, N.------------------------------------------- O-4-4
Barci, M.-------------------------------------------- O-1-1
Barnes, J.P.------------------------------------------ N-1-1
Baron, T.-------------------------------------------- N-5-3
Barraud, S.--------------------------------- K-4-2, N-2-2
Bassim, N.---------------------------------------- H-7-3L
Batude, P.----------------------- PS-2-13, K-4-3, N-1-1
Bauer, G.E.W.----------------------------------- PS-12-2
Bea, J.-------------------------------------------- PS-2-12
Bea, J.C.-------------------------------------------- PS-2-9
Beche, E.-------------------------------------------- N-5-3
Beekley, B.----------------------------------------- PS-8-9
Benaissa, L.----------------------------------------- E-2-5
Benevent, V.---------------------------------------- K-4-3
Benoit, D.---------------------------------------- PS-2-13
Bera, M.K.------------------------------------------ O-1-2
Bernier, N.------------------------------------------ N-2-3
Besson, P.------PS-2-13, K-4-3, N-1-1, N-2-2, N-2-3
Beyer, A.-------------------------------------------- A-7-4
Bhatt, P.-------------------------------------------- PS-3-5
Bienstman, P.--------------------------------------- A-6-1
Blaesi, B.-------------------------------------------- A-1-1
Blaise, P.-------------------------------------------- O-1-1
Boeuf, F.---------------------------K-2-2, K-4-2, N-2-2
Bolotov, L.--------------------------------------- PS-9-12
Bonnevialle, A.------------------------------------- N-2-3
Borg, M.--------------------------------------------- D-4-1
Bout, C.------------------------------------------ PS-2-13
Brems, S.---------------------------------------- PS-13-13
Brintlinger, T.------------------------------------- H-7-3L
Brunet, L.---------------------------------- K-4-3, N-1-1
Buerger, D.------------------------------------------ H-3-6

C

Cai, Q.----------------------------------------------F-3-5LCao, Y.L.------------------------------------------- PS-7-4
Capellini, G.------------------------------- G-3-4, G-5-1
Casse, M.-------------------------------------------- N-1-1
Cathcart, G.A.---------------------------------------F-2-1
Cepek, C.-------------------------------------------- E-1-6
Cha, H.Y.-------------------- PS-1-4, PS-6-12, PS-6-16
Chae, S.J.---------------------------------------PS-2-18L
Chai, J.W.------------------------------ PS-13-14, D-2-2
Chaisakul, P.---------------------------------------- A-4-1
Chan, D.S.H.----------------------------------- PS-13-16
Chang Liao, K.S.----------------------------------- N-1-4
Chang, C.------------------------------------------- A-5-4
Chang, C.L.-----------------------------PS-11-10, E-4-2
Chang, C.T.------------------------------PS-11-7, N-4-4
Chang, C.W.----------------------------PS-11-10, E-4-2
Chang, C.Y.--PS-6-8, PS-6-9, PS-14-2, C-1-2, N-5-2
Chang, D.C.------------------------------------- PS-2-14
Chang, E.Y.----------PS-1-1, PS-1-2, PS-1-3, PS-6-2,
PS-6-3, PS-6-7, PS-8-4,
M-1-2, M-7-5
Chang, EdwardY.----------------------------------- J-1-6
Chang, H.Y.----------------------------------------- O-6-3
Chang, J.H.-----------------------------------------M-7-6
Chang, L.B.-------------------------------------- PS-11-1
Chang, N.W.--------------------------------------- PS-6-6
Chang, P.C.------------------------------ PS-1-2, PS-1-3
Chang, S.B.---------------------------------------- PS-7-2
Chang, S.C.-------------------------------------- PS-14-2
Chang, S.H.-------------------------------------- PS-11-7
Chang, S.J.------------------------------PS-3-12, PS-7-2
Chang, S.W.--------------------------- PS-11-10, E-4-2
Chang, T.F.M.-------------------PS-2-1, PS-2-3, E-4-1
Chang, T.S.-------------------------------- K-3-2, O-6-4
Chang, W.H.------------------------------- B-4-4, K-2-3
Chang, Y.-J.-------------------------------------- PS-11-8
Chang, Y.C.-------------------------------------- PS-2-14
Chang, Y.F.--------------------------------------- PS-10-5
Chang, Y.H.--------------------------------------- H-7-5L
Chang, Y.J.-----------------------------------------PS-8-9
Chang, Y.T.-------------------------------------- PS-2-14
Chang, Y.W.---------------------------------------- K-7-4
Chanthaphan, A.-------------------------------- PS-14-6
Chatterji, N.-------------------------------------- PS-12-9- 48 -

Chauhan, Y.S.-------------------------------------- K-6-1
Chen, B.Y.-------------------------------------------J-1-6
Chen, C.--------------------------------------------- K-1-1
Chen, C.H.------- PS-6-9, PS-6-21, PS-7-1, PS-11-1,
PS-11-6, PS-15-6
Chen, C.K.--------------------------------------- PS-2-14
Chen, C.P.---------------------------------------PS-13-14
Chen, C.Y.-------------------PS-2-1, PS-2-3, PS-6-17,
PS-6-19, E-4-1
Chen, H.-----------------------------------------PS-12-14
Chen, H.A.-----------------------------------------PS-7-5
Chen, H.C.-----------------------------------------PS-5-7
Chen, H.J.H.------------------------------------- PS-6-20
Chen, H.M.-------------------------------------- PS-7-17
Chen, H.M.P.----------------------------------------F-5-3
Chen, H.Y.----------------------------------------- PS-7-5
Chen, I.H.---------------------------------------- PS-9-11
Chen, J.------------------------------------------- PS-1-16
Chen, J.H.-------------------------------- PS-1-2, PS-1-3
Chen, J.N.--------------------------------------------F-5-2
Chen, J.Y.------------------------------ PS-4-6, PS-13-1
Chen, K.C.------------------------------------------ K-7-4
Chen, K.H.--------------------------------- K-3-2, O-6-4
Chen, K.J.------------------------------------------- A-1-3
Chen, K.M.-------------------------------- PS-1-3, J-1-6
Chen, K.N.------------------------------------------ E-6-3
Chen, L.-----------------------PS-5-1, PS-5-2, PS-10-1
Chen, M.---------------------------------------- PS-14-16
Chen, P.-----------------------------------------------F-3-1
Chen, P.H.-------------------------------PS-7-3, PS-7-19
Chen, P.L.------------------------------------------- C-3-2
Chen, P.S.---------------------------------------- PS-9-10
Chen, P.W.--------------------------------------PS-15-13
Chen, P.Y.------------------------------------------- A-6-3
Chen, R.-------------------------------------C-5-2, G-1-3
Chen, S.----------------------------------PS-8-12, G-3-1
Chen, S.C.--------------------------------------- PS-15-8
Chen, S.H.------------------------------------ PS-11-12L
Chen, S.L.------------------------------------------- P-3-3
Chen, T.M.---------------------------- PS-7-20, PS-7-21
Chen, T.W.--------------------------------------- PS-8-14
Chen, W.S.--------------------------------------- PS-9-10
Chen, Y.------------------------------------------ PS-8-26
Chen, Y.H.-----------------------------PS-12-20, M-6-1
Chen, Y.M.--------------------------------------- PS-11-3
Chen, Y.N.---------------------------------------- K-2-5LChen, Y.S.------------------------------ PS-9-10, H-7-5L
Chen, Y.Z.------------------------------------------- O-6-4
Chen, Z.-------------------------------------F-1-2, O-3-1
Cheng, B.------------------------------------------ PS-3-1
Cheng, C.C.------------------------------- PS-1-5, B-4-4
Cheng, C.F.---------------------------------------- PS-7-1
Cheng, C.H.---------------------------------------- K-7-4
Cheng, H.C.----------------------------PS-1-7, PS-11-7
Cheng, H.H.---------------------------------------- A-5-4
Cheng, P.G.---------------------------------------- PS-1-5
Cheng, S.P.------------------------------- PS-1-2, PS-1-3
Cheng, W.---------------------------------------- PS-2-10
Cheng, Y.----------------------------------------- PS-14-6
Cheng, Y.H.-------------------------------------- PS-6-14
Cheng, Y.P.------------------------------------------ A-7-2
Cheong, H.J.------------------------------------- PS-10-3
Chi, D.Z.-------------------------------------------- D-2-2
Chi, W.C.-------------------------------------------PS-1-6
Chi, W.F.-------------------------------------------- N-1-4
Chiang, C.H.---------------------------------------- K-5-3
Chiang, C.Y.------------------------------------- PS-6-20
Chiba, D.---------------------------------------------P-1-4
Chiba, T.---------------------------------- PS-12-2, C-1-5
Chien, C.H.------------------------------- PS-1-6, K-1-2
Chikamatsu, A.------------------------------------- O-2-4
Chikamatsu, K.--------------------------- M-4-2, M-7-3
Chikyow, T.--------------------------------- C-7-4, E-1-3
Childs, D.T.D.------------------------------------- PS-7-7
Chin, C.H.-------------------------------------------F-3-4Chin, Y.H.----------------------------- PS-7-20, PS-7-21
Chiou, C.C.-------------------------------------- PS-11-6
Chiou, Y.L.-----------------------------------------PS-5-3

Chiou, Y.Z.----------------------------------------- PS-7-2
Chiu, C.H.----------------------------------------- PS-4-6
Chiu, H.C.--------------------------------------- PS-6-14
Chiu, H.J.------------------------------------------ PS-5-3
Chiu, Y.C.---------------------------------------- PS-14-2
Chiu, Y.L.----------------------------------- F-3-4, K-3-2Cho, J.------------------------------------------------P-1-2Cho, K.H.--------------------------------PS-6-15, K-3-4
Choi, S.J.------------------------------------------- PS-4-8
Choi, W.K.--------------------------------------- PS-7-16
Choi, Y.J.-------------------------------------- PS-11-13L
Chong, W.C.------------------------------------- PS-7-17
Chou, C.H.------------------------------- PS-1-6, PS-1-7
Chou, P.W.--------------------------------------- PS-2-16
Chrastina, D.---------------------------------------- A-4-1
Chu, C.W.-------------------------------------PS-10-12L
Chu, C.Y.-------------------------------------------- C-1-2
Chu, K.Y.------------------------------------------- PS-1-5
CHU, Y.H.------------------------------------------ D-7-1
Chuang, C.T.--------------------------- PS-3-10, K-2-5L
Chuang, M.Y.--------------------------------------- F-5-2
Chuang, R.W.------------------------------------ PS-15-6
Chubachi, R.-------------------------------------- PL-1-1
Chung, I.-------------------------------------------- K-3-4
Chung, M.T.---------------------------------------- F-3-1
Chung, S.O.----------------------------------------- O-7-1
Chung, S.S.----------------------------------------- K-1-2
Chyi, J.I.------------------------------ PS-6-17, PS-6-19
Claes, T.--------------------------------------------- A-6-1
Cobas, E.-------------------------------------------- P-3-1
Cong, Y.Y.-------------------------------- PS-9-1, PS-9-2
Costina, I.------------------------------------------- G-5-1
Cui, G.D.--------------------------------- PS-9-1, PS-9-2
Cuong, N.T.-------------------------------------- PS-13-9
Cutaia, D.------------------------------------------- D-4-1

D

D' Costa, V.R.-------------------------------------- G-5-2
D'Arsie, L.------------------------------------------ E-1-6
Dairiki, K.-------------------------------------------M-6-2
Dansas, H.------------------------------------------ N-1-1
Dao, T.T.--------------------------------------PS-10-10L
Dasai, F.--------------------------------------- PS-11-13L
David, S.-------------------------------------------- N-5-3
Dayeh, S.A.---------------------------------C-5-2, G-1-3
De Groot, K.--------------------------------------- PS-4-9
De La Rue, R.M.-------------------------------- PS-7-12
De Salvo, B.---------------------------------------- O-1-1
Deal, W.R.------------------------------------------M-1-3
Deki, M.--------------------------------------------PL-2-1
Delacou, C.----------------------------------------- C-1-5
Delprat, D.------------------------------------------ N-5-3
Denis, H.-------------------------------------------- K-4-3
Denoual, M.---------------------------------------- E-7-3
Deprat, F.----------------------------------- K-4-3, N-1-1
Deshpande, P.--------------------------------------- A-6-1
Di Ventra, M.--------------------------------------- H-3-6
Dimoulas, A.------------------------------------ PS-13-13
Ding, S.J.------------------------------------------- PS-4-4
Divakaruni, R.------------------------------------- PS-3-4
Do, H.B.-------------------------PS-1-2, PS-1-3, M-7-5
Dosho, S.-------------------------------------------- E-7-2
Druais, G.------------------------------------------- K-4-3
Du Bois, B.----------------------------------------- A-6-1
Du, G.----------------------------------------------- K-7-2
Du, N.----------------------------------------------- H-3-6
Du, W.N.-------------------------------------------- D-7-4
Duangchan, S.----------------------------------- PS-14-4
Duarte, J.P.------------------------------------------ K-6-1
Duesberg, G.---------------------------------------- E-1-6

E

Edo, M.----------------------------------------------M-2-4
Egawa, T.------------------------------ PS-6-11, PS-6-13
Ekgasit, S.------------------------------------------- G-7-6
Elgabra, H.------------------------------------PS-14-18LEma, K.------------------------------------------- PS-15-1
Emery, L.-------------------------------------------- K-4-3
Enami, Y.-------------------------------------------- A-2-4
Encomendero, J.-----------------------------------M-7-1
Endo, K.------------------------------------------ PS-1-13
Endoh, A.------------------------- PS-6-26L, PS-6-27L
Endoh, T.------------- PS-1-17, PS-9-9, O-4-2, O-5-2,
O-5-3, O-5-4
Enomoto, T.----------------------------------------- E-6-1

Eom, S.K.------------------------------ PS-1-4, PS-6-16
Eryu, O.------------------------------------------ PS-8-16
Esconjauregui, S.---------------------------------- E-1-6
Euvrard Colnat, C.--------------------------------- K-4-3
Fan, C.C.----------------------------------------- PS-14-2
Fan, J.----------------------------------------------- PS-4-9
Fan, M.L.---------------------------------------- PS-3-14
Fang, N.------------------------------------------- D-3-6L
Fang, R.--------------------------------------------PS-2-8
Fang, Y.C.------------------------------------------- N-5-4
Fang, Y.K.---------------------------------------- PS-3-12
Farahat, M.E.--------------------------------- PS-10-12L
Favier, S.---------------------------------PS-2-13, N-5-3
Fedorov, V.V.-------------------------------------- PS-9-3
Fei, J.--------------------------------------- N-4-2, N-4-3
Feng, P.--------------------------------------------- PS-5-4
Fenouillet Beranger, C.------- PS-2-13, K-4-3, N-1-1
Ferrotti, T.------------------------------------------- K-2-2
Fiorini, P.-------------------------------------------F-3-5L
Freedsman, J.------------------------------------ PS-6-11
Friedrichs, P.--------------------------------------- M-3-1
Frigerio, J.------------------------------------------ A-4-1
Frohlich, K.----------------------------------------- O-7-2
Fu, C.H.--------------------------------------------- N-1-4
Fu, Y.------------------------------------------ PS-11-12L
Fujikata, J.----------------------------------A-3-2, A-4-3
Fujikawa, Y.---------------------------------------- E-1-3
Fujimatsu, M.---------------------------------------M-1-1
Fujimura, N.--------------------------PS-4-1, PS-8-28L
Fujino, M.------------------------PS-2-6, PS-2-7, E-2-3
Fujino, Y.---------------------------- PS-14-7, PS-14-10
Fujita, D.-------------------------------------------- C-6-3
Fujita, H.---------------------------------------------F-2-1
Fujita, K.-------------------------------------------- C-4-2
Fujita, M.---------------------------O-1-3, O-1-4, O-4-3
Fujitsuka, R.---------------------------------------- N-3-3
Fujiwara, A.-------------------------------- H-3-1, H-3-2
Fujiwara, K.-----------------------------------------P-1-6
Fukami, S.------------------------------------------ O-4-1
Fukata, N.------------------------------ PS-13-19, D-7-2
Fuketa, H.---------------------------------- K-1-4, N-2-1
Fukuchi, A.----------------------------------------- H-3-2
Fukuda, K.------ PS-1-13, PS-6-25L, PS-10-2, J-2-2,
J-6-2, J-6-4, K-1-3, K-1-4, M-3-2
Fukuda, N.--------------------------------------- PS-10-3
Fukui, T.-------------------------------- PS-13-18, K-2-4
Fukumura, T.----------------------------PS-8-23, O-2-4
Fukushima, A.------------------- PS-12-8, P-3-5, P-3-6
Fukushima, T.----------------- PS-2-9, PS-2-12, E-6-2
Fukusima, T.--------------------------------------- PS-2-5
Fukuzawa, M.----------------------------------- PS-11-9
Fukuzumi, S.--------------------------------- PS-10-10L
Funaki, S.---------------------------------------- PS-8-25
Funaki, T.-------------------------------------------- J-1-4
Funakubo, H.--------------------------------------- O-2-2
Furui, Y.------------------------------------------ PS-14-9
Furukawa, K.--------------------------------------PS-3-2
Furumoto, Y.----------------------------- PS-15-3, C-1-4
Furuta, J.-------------------------------------------- K-7-3
Futaba, D.N.---------------------------------------- D-3-2

G

Gaben, L.----------------------------------- K-4-2, N-2-2
Gao, B.---------------------------------------------- O-3-1
Gao, F.----------------------------------------------PS-7-8
Gao, L.------------------------------------------- PS-7-15
Garcia Barros, M.------------------------------- PS-2-13
Gardes, F.------------------------------------------- A-5-1
Gau, Y.S.------------------------------------------- PS-6-9
Gaubert, P.-----------------------------------------PS-3-7
Gaudin, G.------------------------------------------ N-5-3
Geelhaar, L.----------------------------------------- D-6-1
Geng, Y.--------------------------------------------- A-7-3
George, T.-------------------------------PS-9-8, PS-9-11
Geshev, P.------------------------------ PS-15-10, D-4-4
Ghibaudo, G.--------------------------------------- K-2-2
Ghosh, S.-------------------------------------------PS-3-5
Gies, S.---------------------------------------------- A-7-4
Godignon, P.------------------------------------- PS-8-16
Gomi, Y.--------------------------------------------- E-4-3
Gondcharton, P.------------------------------------ E-2-5
Gong, P.--------------------------------------------- A-3-3
Gong, W.-------------------------------------------- C-3-4
Gong, X.-------------------------------------------- D-2-2- 49 -

Goorsky, M.--------------------------------------- PS-8-9
Goto, K.---------------------------------------------M-5-4
Gotoh, H.--------------------------- D-6-2, H-7-1, P-1-3
Gotoh, M.------------------------------------------PS-2-4
Gourvest, E.---------------------------------------- K-4-3
Gowers, R.----------------------------------------- PS-4-9
Grampeix, H.--------------------------------------- N-5-3
Grasser, T.---------------------- PS-3-13, PS-9-3, B-5-4
Green, R.--------------------------------------------- J-6-1
Gregusova, D.--------------------------------------M-2-1
Guo, C.---------------------------------------------- C-7-1
Guo, J.C.----------------------------------------- PS-3-16
Guo, L.---------------------------------------------- K-1-1
Guo, Y.---------------------C-1-5, D-2-6, E-1-6, O-3-3
Gupta, G.----------------------------------------- PS-12-1
Guy, J.----------------------------------------------- O-1-1

H

H. Zadeh, D.---------------------------------------- N-5-1
Ha, M.T.H.------------------------------------------M-7-5
Ha, N.------------------------------------------------ H-6-4
Habersat, D.----------------------------------------- J-6-1
Hachiya, S.--------------------------------- O-7-3, O-7-4
Hada, H.--------------------------------------------- O-4-4
Hagiwara, Y.-----------------------------------------F-7-4
Hai, P.N.----------------------------------------------P-3-4
Hajiri, T.----------------------------------------- PS-12-12
Hallam, T.------------------------------------------- E-1-6
Hamauchi, S.--------------------------------------- C-6-2
Hamaya, K.------------------------------------- PS-12-18
Hamzah, A.M.R.-------------------------------- PS-8-19
Han, D.D.-------------------------------- PS-9-1, PS-9-2
Han, G.---------------------------------------------- K-1-5
Han, H.V.----------------------------------------- PS-7-17
Han, J.H.-------------------------------------------- A-3-4
Han, J.W.----------------------------------------- PS-3-17
Han, S.W.---------------------------------------- PS-6-12
Han, Y.-----------------------------------------------M-7-4
Han, Z.------------------------------------------ PS-13-11
Hanaizumi, O.-------------------------------- PS-14-19L
Handa, H.-------------------------------------------M-3-3
Hanyu, T.-------------------------------------------- O-4-2
Hao, H.---------------------------------------------- K-7-2
Hao, S.----------------------------------------------- K-3-2
Hao, Y.----------------------------------------------- K-1-5
Hao, Y.F.----------------------------------------- PS-5-12Hara, H.--------------------------------------------- G-5-5Hara, K.---------------------------------PS-8-6, PS-8-10Hara, S.------------------------------------- D-4-3, D-6-3
Hara, Y.--------------------------------------------- PS-8-2
Harada, S.----------------------- PS-14-16, J-1-1, J-6-2
Harada, T.------------------------------------------- F-6-4
Harashima, T.----------------------------------------F-2-5
Harayama, C.--------------------------------------- A-7-6
Harima, H.----------------------------------------- PS-1-8
Harimurti, S.---------------------------------------- C-4-4Harris, T.R.---------------------------------------- PS-8-1
Haruta, M.-------------------------- F-2-3, F-2-4, F-7-2
Haschke, J------------------------------------------ C-3-1
Hasegawa, K.--------------------------------------- C-5-1
Hasegawa, M.----------------------------------- PS-14-4
Hasegawa, S.------------------------------------ PS-15-4
Hasegawa, T.------------------ PS-4-7, PS-8-23, O-2-4
Hashiguchi, H.----------------------------PS-2-5, E-6-2
Hashimoto, H.------------------------------------- PS-2-9
Hashimoto, K.------------------------------------- PS-3-2
Hashimoto, M.------------------------------------ PS-5-6
Hashimoto, S.------------------------------------- PS-3-8
Hashimoto, Y.----------------------------------- PS-7-22
Hashizume, H.----------------------------------- PS-11-2
Hasler, T.-------------------------------------------- H-7-6
Hasuike, N.---------------------------------------- PS-1-8
Hasumi, M.----------------------------------------- C-7-6
Hata, K.--------------------------------------------- D-3-2
Hatakeyama, T.-------------------------------------- J-6-2
Hatano, M.--------------------- PS-14-14, J-2-3, M-5-1
Hattori, J.------------------------------- PS-13-22, D-4-4
Hattori, S.---------------------------------------- PS-7-22
Hayakawa, D.---------------------------------------P-1-4
Hayami, H.------------------------------------------ F-2-4
Hayashi, N.----------------------------------------- C-1-3
Hayashi, T.--------------------------------------- PS-10-1
Hayashi, Y.--------------------------------------- PS-7-10
He, G.B.------------------------------------------ PS-6-19
He, R.-----------------------------------------------PS-2-6

Heimbrodt, W.-------------------------------------- A-7-4
Helin, P.--------------------------------------------- A-6-1
Heya, A.-------------------------------- PS-8-24, PS-9-5
Hibino, Y.-------------------------------- PS-8-13, P-1-4
Hiblot, G.---------------------------------- K-2-2, K-4-2
Higashi, S.--------------------------------------- PS-1-15
Higashi, Y.--------------------------------------- PS-1-16
Higashiwaki, M.-----------------------------------M-5-4
Higo, A.-------------------------------- PS-12-16, A-1-4
Higurashi, E.--------------------------------------- PS-2-7
Hikavyy, A.----------------------------------------- G-4-4Hirai, H.---------------------------------- PS-14-7, J-1-3
Hiraiwa, A.-----------------------------PS-14-15, M-5-3
Hiraki, T.-------------------------------------------- A-4-2
Hiramatsu, K.------------------------------------ PS-1-15
Hiramatsu, T.-------------------------------------- M-6-2
Hiramoto, M.--------------------------------------- C-1-1
Hiramoto, T.---------------------------------------- K-5-1
Hirano, S.---------------------------------------- PS-8-24
Hiratsuka, K.--------------------------------- PS-14-17L
Hiraya, Y.--------------------------------------- PS-13-18
Hirayama, N.------------------------------------ PS-6-18
Hiroki, H.---------------------------------------- PS-1-17
Hirose, A.------------------------------------------- K-5-2
Hirose, S.---------------------------- PS-12-12, PS-13-8
Hirose, T.--------------------------------- PS-5-6, PS-5-8
Hirota, Y.-------------------------------------------- N-1-2
Hirotani, J.------------------------------------------ D-3-3
Hiroyuki, H.------------------------------------- PS-2-12
Hizawa, T.------------------------------------- PS-11-13L
Ho, C.-Y.----------------------------------------- PS-11-8
Ho, K.I.---------------------------------------------- D-3-5
Ho, Y.P.---------------------------------------------- D-3-5
Hoehn, O.------------------------------------------- A-1-1
Hofmann, M.------------------------------------ PS-8-14
Hogg, R.A.----------------------------------------- PS-7-7
Honda, Y.------------------------------- PL-2-1, PS-12-6
Hong, W.-------------------------------------- PS-15-19L
Honjo, H.----------------------------------- O-4-2, O-5-4
Honzawa, K.------------------------------------- PS-11-4
Hori, M.------------------------------------------ PS-11-2
Hori, N.------------------------------------------- PS-7-24
Hori, S.---------------------------------------------PS-8-2
Horii, T.--------------------------------------- PS-14-17L
Horikawa, T.---------------------------------------- A-4-3
Horng, S.F.--------------------------------------- PS-10-5
Hortemel, L.---------------------------------------- N-1-1
Hoshi, K.-------------------------------------------- E-1-2
Hoshii, T.-------------------------------------------- C-5-3
Hosoda, H.------------------------------------------ E-4-1
Hosoi, T.------------------------------------------ PS-14-6
Hotta, Y.--------------------------------------------- C-7-2
Hou, T.H.------------------------------------B-4-4, O-7-2
Hsiao, W.Y.----------------------------------------- O-6-4
Hsiao, Y.H.------------------------------------------ A-1-3
Hsiao, Y.Y.--------------------------------------- PS-9-11
Hsieh, C.H.------------------------------PS-6-17, N-5-4
Hsieh, D.H.---------------------------------------- PS-6-8
Hsieh, E.R.------------------------------------------ K-1-2
Hsieh, K.C.-------------------------------------- PS-6-20
Hsieh, K.Y.------------------------------------------ O-3-5
Hsieh, M.Y.-------------------------------------- PS-15-5
Hsieh, Y.P.--------------------------------------- PS-8-14
Hsu, C.C.------------------------------------------- PS-1-6
Hsu, C.H.------------------------------ PS-15-13, C-3-2
Hsu, H.C.---------------------------------------- PS-7-18
Hsu, H.H.----------------------- PS-6-3, PS-6-7, M-1-2
Hsu, H.T.--------------------------------------------M-1-2
Hsu, J.S.--------------------------------------------- F-5-3
Hsu, K.C.------------------------------------------- O-3-5
Hsu, S.H.----------------------------------------- PS-2-14
Hsu, W.C.---------------------------------------- PS-7-19
Hsu, Y.C.----------------------------------------- PS-11-3
Hsueh, W.J.--------------------------- PS-6-17, PS-6-19
Hu, B.---------------------------------- PS-12-5, PS-12-6
Hu, B.Y.-------------------------------------------- PS-6-6
Hu, C.------------------------------------------------ K-6-1
Hu, G.----------------------------------------------PS-9-6
Hu, H.H.-------------------------------------------PS-3-3
Hu, K.---------------------------------------------- M-1-5
Hu, S.----------------------------------------------- PS-9-6
Hu, V.P.H.---------------------------------------- PS-3-10
Huang, C.C.------------------------------------PS-13-15

Huang, C.W.--------------------------- PS-4-6, PS-13-1
Huang, C.Y.------------------------- PS-1-7, PS-11-12L
Huang, G.W.------------------------------- PS-1-3, J-1-6
Huang, H.L.------------------------------------- PS-10-5
Huang, I.C.-------------------------------------- PS-6-21
Huang, I.J.------------------------------------------ K-7-4
Huang, J.K.---------------------------------------- PS-6-8
Huang, J.L.----------------------------------------PS-7-4
Huang, J.W.---------------------------------------- PS-7-4
Huang, L.L.------------------------------ PS-9-1, PS-9-2
Huang, M.H.--------------------------------------- PS-1-7
Huang, P.----------------------------------- K-7-2, O-3-1
Huang, P.C.-------------------------------------- PS-3-12
Huang, Q.------------------------------------------- K-1-1
Huang, R.--------------------------------- PS-4-9, K-1-1
Huang, S.-------------------------------------------- D-4-2
Huang, S.E.-------------------------------------- PS-3-14
Huang, S.H.----------------------------------------- A-5-4
Huang, S.J.----------------------------------------- PS-1-5
Huang, S.W.---------------------------------------- K-7-4
Huang, T.H.------------------------------------- PS-15-12
Huang, T.Y.-------------------------------------- PS-6-22
Huang, Y.P.----------------------------------------- E-6-3
Huang, Y.S.-----------------------------PS-13-15, E-6-3
Huang, Y.T.---------------------------------------- PS-4-6
Huang, Y.X.------------------- PS-6-2, PS-6-3, PS-6-7,
PS-11-10, E-4-2
Huang, Z.L.-------------------------------------- PS-7-18
Hudec, B.------------------------------------------- O-7-2
Hung, C.H.-------------------PS-7-20, PS-7-21, M-6-1
Hung, J.H.-----------------------------------------PS-9-7
Hung, L.Y.--------------------------------------- PS-14-2
Husain, M.------------------------------------------ A-5-1
Huynh, S.H.------------------------------PS-1-2, M-7-5
Hwang, S.---------------------------------------- PS-3-11
Hwu, J.G.---------------------------------------- PS-7-11

I

Ichijoh, H.------------------------------------------ M-3-5
Ichikawa, H.---------------------------------------- E-1-4
Ichikawa, T.----------------------------------------- C-5-1
Ichikawa, Y.-------------------------------------- PS-2-17
Ichimura, M.----------------------------------------- J-2-4
Ide, T.----------------------------------------------- M-4-4
Ido, T.------------------------------------------------ A-5-2
Ieda, Y.------------------------------------ PS-4-3, O-4-3
Ifuku, R.--------------------------------------------- E-1-5
Igarashi, K.-------------------------------------- PS-8-20
Iguchi, K.------------------------------------------- E-2-3
Iguchi, N.------------------------------------------- O-4-4
Ihida, S.----------------------------------------------F-2-1
Iida, T.-------------------------------------------- PS-6-18
Iihama, S.------------------------------------------- A-2-2
Iioka, M.------------------------------------------- PS-8-2
Iizuka, S.-------------------------------------------- N-6-3
Iizuka, T.---------------------------------------------F-1-4
Ike, S.--------------------------------------- G-4-1, G-4-4
Ikeda, A.----------------------------------------------J-2-1
Ikeda, M.------------------------------------ F-1-3, O-4-3
Ikeda, N.------------------------------------------- PS-7-7
Ikeda, S.------------------------------------ O-4-2, O-5-4
Ikeda, T.-------------------- F-1-3, F-5-4, K-5-2, O-4-3
Ikeda, Y.------------------------------------------ PS-14-3
Ikegaya, S.----------------------------------------- PS-2-5
Ikeno, N.-------------------------------------------- C-7-4
Ikenoue, H.--------------------------------- G-5-3, J-2-1
Ikezawa, M.----------------------------------------PS-8-5
Ikku, Y.--------------------------------------A-7-2, A-7-5
Illarionov, Yu.Yu.------------------------ PS-9-3, B-5-4
Imafuji, O.------------------------------------------ A-1-2
Imamura, R.------------------------------------- PS-11-9
Imanishi, Y.----------------------------------------- H-6-3
Imbert, B.------------------------------------------- E-2-5
Inaba, M.------------------------------- PS-14-15, C-7-3
Inokuchi, T.------------------------------------- PS-12-18
Inoue, H.-----------------------------------PS-4-3, F-1-3
Inoue, S.----------------------------------- PS-9-4, E-7-3
Isella, G.--------------------------------------------- A-4-1
Ishida, H.--------------------------------------------M-3-3
Ishida, M.-----------PS-11-13L, F-6-3, M-2-3, M-3-3
Ishida, S.-------------------------------------------- A-5-2
Ishigaki, T.----------------------------------------- PS-1-8
Ishihara, N.--------------------- PS-6-23, E-7-2, M-6-2
Ishihara, R.------------------------------------------ E-1-6- 50 -

Ishihara, S.--------------------------------------- PS-8-13
Ishihara, T.---------------------- PS-1-16, K-3-3, K-5-2
Ishii, H.--------------------------------------------- PS-2-2Ishii, T.---------------------------------------------- O-7-4
Ishii, Y.------------------------------------------- PS-10-6
Ishikawa, A.---------------------------------------- D-2-5
Ishikawa, M.------------------------ PS-8-13, PS-12-18
Ishikawa, Y.----------------------------------------- A-4-2
Ishimori, H.------------------------------------------ J-6-2Ishino, J.------------------------------------------ PS-10-7
Ishioka, J.--------------------------------PS-8-19, G-3-7
Ishiyama, U.------------------------------------- PS-13-9
Ishizaka, F.----------------------------- PS-13-18, K-2-4
Ishizawa, S.----------------------------------------- H-6-3
Ishizu, T.---------------------------------- PS-4-3, O-1-3
Isobe, A.--------------------------------------------- O-1-3
Isobe, H.------------------------------------------ PS-12-4
Isshiki, H.------------------------------------------- A-5-5Isu, T.-------------------------------------- PS-7-9, A-7-6
Itai, S.------------------------------------------------ K-3-3
Ito, A.------------------------------------------------ C-6-2
Ito, H.------------------------------------------------ C-5-1
Ito, K.---------------------------------------- F-2-5, O-5-2
Ito, M.-------------------------------------------- PS-11-2
Ito, N.-------------------------------------- M-4-2, M-7-3
Ito, T.---------------------- PS-13-20, PS-15-14, D-6-4
Itoh, E.-------------------------------------------- PS-10-4
Itoh, H.-----------------------------PS-14-17L, PS-15-4
Itoh, K.------------------------------------------- PS-7-10
Itoh, T.---------------------------------- PS-15-14, E-2-4
Itokawa, H.----------------------------------------- N-3-3
Iwagami, T.----------------------------------------- F-2-5
Iwai, H.------------------------ PS-1-1, PS-6-2, PS-6-3,
PS-6-7, M-1-2, N-5-1
Iwai, T.------------------------------ PS-6-27L, PS-13-8
Iwamoto, M.---------------------------------------- C-4-3
Iwamoto, S.----------------A-1-5, A-5-1, A-5-2, A-5-3
Iwasaki, T.--------------------- PS-14-14, J-2-3, M-5-1
Iwasaki, T.O.--------------------------------------- O-7-3
Iwata, A.--------------------------------------------- G-3-6
Iwata, S.------------------------------- PS-6-25L, M-1-1
Iwata, T.--------------------------------------- PS-11-13L
Izukashi, K.------------------------------------ PS-1-20L
Izumi, T.------------------------------------------ PS-12-4

J

Jalil, M.B.A.------------------------------------- PS-12-1
Jancovic, P.----------------------------------------- O-7-2
Jang, H.G.------------------------------------------ PS-6-5
Jangtawee, P.--------------------------------------- G-7-6
Jans, K.---------------------------------------------- A-6-1
Jansen, R.----------------------------------- A-6-1, P-3-2
Jaud, M.A.------------------------------------------ K-4-2
Jech, M.------------------------------------------ PS-3-13
Jeem, M.----------------------------------------- PS-8-19
Jen, A.----------------------------------------------- A-2-4
Jena, D.----------------------------------------------M-7-1
Jeon, I.----------------------------------------------- C-1-5
Jeon, J.----------------------------------------------PS-1-9
Jeong, J.--------------------------------------- PS-15-20L
Jeong, J.H.------------------------------------------ O-5-3
Jevasuwan, W.------------------------- PS-13-19, D-7-2
Jhon, Y.M.----------------------------------------- PS-6-1
Ji, H.M.--------------------------------------------- PS-7-8
Ji, X.H.---------------------------------------------- D-7-4
Jiang, H.--------------------------------------------- K-7-2
Jiang, L.-------------------------------------------- PS-4-9
Jiang, Z.--------------------------------------------- A-1-6
Jiang, Z.W.--------------------------------------- PS-14-2
Jiang, Z.Y.--------------------------------------- PS-13-11
Jimba, S.------------------------------------------- PS-8-2
Jimbo, K.-------------------------------------------- C-3-3Jin, Y.----------------------------------------------- PS-2-8Jin, Z.--------------------------------------------- PS-14-6
Jing, X.M.---------------------------------------- PS-2-11
Jiu, J.------------------------------------------------- E-2-1
Jo, J.------------------------------------------------- D-7-3
Johll, H.-------------------------------------------- PS-8-3
Jouane, Y.------------------------------------------- A-2-4
Jouno, J.----------------------------------------------P-1-6
Jousseaume, V.------------------------------------- K-4-3
Juan, A.---------------------------------------------- K-5-3
Juang, Y.Z.--------------------------------------- PS-5-12
Jun, C.H.------------------------------------------- PS-6-5

Jung, B.O.------------------------------------------PL-2-1
Jung, D.Y.------------------------------------------ PS-6-5
Jung, M.--------------------------------------------- H-7-6
Jungsuttiwong, S.------------------------------- PS-10-8

K

Kabamoto, K.--------------------------------------- D-6-3
Kabeya, Y.------------------------------------------ G-3-6
Kabuyanagi, S.--------------------------PS-1-10, N-3-2
Kachtouli, R.------------------- PS-2-13, K-4-3, N-1-1
Kada, W.-------------------------------------- PS-14-19L
Kaeriyama, S.---------------------------------------F-7-4
Kaewin, T.--------------------------------------- PS-10-8
Kagawa, K.------------------------------------------F-2-2
Kageshima, H.-----------------------PS-1-17, PS-13-17
Kageura, T.------------------------------------------ G-1-2
Kai, Y.----------------------------------------------- G-5-3
Kaitsuka, T.----------------------------------------- N-1-2
Kaiwa, K.--------------------------------------------F-6-4
Kajifusa, H.-------------------------------------- PS-14-7
Kajisa, T.------------------------- PS-11-5, F-7-3, F-7-6
Kajita, A.-------------------------------------------- E-1-5
Kajita, H.---------------------------------------- PS-12-11
Kajitani, R.----------------------------------------- M-3-3
Kakehata, T.----------------------------------------M-6-4
Kakita, K.---------------------------------------PS-10-9L
Kako, S.---------------------------- A-5-1, A-5-2, A-5-3
Kakushima, K.--------PS-1-1, PS-6-2, PS-6-3, N-5-1
Kamata, N.------------------------------------------ K-7-1
Kamata, Y.------------------------------------------ N-3-1
Kambayashi, Y.------------------------------- PS-14-19L
Kamimuta, Y.--------------------------------------- N-3-1
Kaminaga, K.------------------------------------ PS-8-23
Kamiya, T.------------------------------------ PS-14-19L
Kamwanna, T.----------------------------------- PS-8-27
Kanai, A.-------------------------------------------- C-3-3
Kanai, M.--------------------------------------- PS-13-21
Kanakura, D.--------------------------------------- E-1-2
Kanamori, A.------------------------------------ PS-10-4
Kanazawa, T.------------------------------ D-2-5, M-1-1
Kanda, S.-------------------------------------------- K-7-3
Kanemura, T.---------------------------------------- J-6-3
Kang, H.C.----------------------------------------- PS-8-3
Kang, J.------------------------------------------- PS-7-10
Kang, J.F.------------------------------------------- O-3-1
Kang, K.-------------------------------PS-1-8, PS-2-18L
Kang, M.J.--------------------------------------- PS-6-16
Kao, C.H.-------------------------------PS-11-10, E-4-2
Kao, C.Y.------------------------------------------- PS-5-7
Kao, T.H.----------------------------------------- PS-3-12
Kao, Y.H.----------------------------------------- PS-7-13
Karmakar, R.S.------------------------------- PS-11-12L
Karrenberg, S.-------------------------------------- A-7-4
Kasai, J.--------------------------------------------- A-5-3
Kasai, S.----------------------------------------------F-7-4
Kasamatsu, A.-------------------- PS-6-26L, PS-6-27L
Kaskela, A.------------------------------------------ C-1-5
Kasper, E.------------------------------------------- E-7-4
Katagiri, H.----------------------------------------- C-3-3
Katagiri, M.----------------------------------------- E-1-5
Katayama, R.--------------------------------------- G-1-4
Katayama, T.------------------------------- A-1-2, O-2-4
Kato, A.------------------------------------------ PS-15-4
Kato, D.--------------------------------------------- P-1-6
Kato, H.--------------------------------------E-4-3, J-2-3
Kato, K.---------PS-4-3, H-7-1, M-6-4, O-1-3, O-1-4
Kato, M.---------------------------------------------- J-2-4
Kato, T.-----------------------------------PS-2-17, G-3-6
Kato, Y.----------------------------------------------M-5-2
Katsumata, T.--------------------------------------- C-7-4
Katsurada, H.----------------------------------------P-1-6
Kauppinen, E.-------------------------------------- C-1-5
Kawachi, S.-------------------------------------- PS-1-17
Kawaguchi, K.---------------------------------- PS-8-19
Kawahito, S.-----------------------------------------F-2-2
Kawai, T.----------------------------------------- PS-13-5
Kawakami, S.--------------------------------------- N-1-2
Kawakita, J.----------------------------------------- E-1-3
Kawamura, K.----------------------------------- PS-13-8
Kawamura, Y.----------------------------------- PS-8-26
Kawanishi, T.---------------------- A-3-5, A-7-1, G-3-3
Kawano, K.---------------------------------C-1-3, O-3-4
Kawano, T.-------------------------------------------F-6-3
Kawarada, H.----------------- PS-14-15, G-1-2, M-5-3

Kawashima, T.-------------------------------------- O-1-2
Kawasumi, A.---------------------------------------F-6-1
Kawayama, I.-------------------------------C-6-2, G-1-5
Kazami, F.--------------------------------------- PS-7-22
Kazoe, Y.-------------------------------------------- C-6-3
Ke, N.------------------------------------------------ K-5-3
Kerdiles, S.-------------------------------- K-4-3, N-1-1
Kesim, Y.E.----------------------------------------- H-3-4
Keum, D.M.------------------------------------- PS-6-15
Khandelwal, S.------------------------------------- K-6-1
Khoo, K.H.----------------------------------------- D-2-3
Ki, R.S.--------------------------------------------- PS-1-4
Kiba, T.-----------------PS-12-19, A-1-4, G-3-1, P-3-3
Kiguchi, T.--------------------------------------PS-8-28L
Kikuchi, A.-----------------PS-8-10, PS-8-20, PS-10-7
Kikuchi, E.------------------------------------------M-6-2
Kikuchi, R.------------------------------------------ K-6-3
Kikuchi, Y.----------------------------------------- PS-4-2
Kikuchihara, H.--------------------------------- PS-10-1
Kim, A.------------------------------------------PS-2-18L
Kim, B.K.------------------------------------------- O-6-3
Kim, B.Y.------------------------------------------- O-7-1
Kim, D.----------------------------------------PS-15-19L
Kim, D.H.------------------------------ PS-1-4, PS-6-16
Kim, D.W.------------------------------------------ K-3-4
Kim, D.Y.------------------------------------------- O-6-3
Kim, H.------------------------------------------- PS-3-11
Kim, H.S.--------------------------------PS-6-12, O-7-1
Kim, H.T.---------------------------------------- PS-6-15
Kim, J.S.---------------------------------------------P-1-2
Kim, J.W.------------------------------------------- O-6-3
Kim, K.R.------------------------------------------ PS-3-9
Kim, M.--------------------------------------------- D-7-3
Kim, N.H.------------------------------------------- P-1-2
Kim, N.K.------------------------------------------- O-6-3
Kim, O.H.---------------------------------------- PS-13-3
Kim, S.G.------------------------------------------- O-7-1
Kim, T.-----------------------------------------------J-1-4
Kim, Y.M.---------------------------------------- PS-6-24
Kim, Y.T.-------------------------------------------PS-6-1
Kim, Z.S.------------------------------------------- PS-6-5
Kimoto, T.------------------------------------------- K-6-2
Kimura, S.------------------------------------------ C-7-6
Kimura, T.---------------------------------------- PS-12-3
Kimura, Y.------------------------------------ PS-11-13L
King, Y.C.---------------------------------- K-3-2, O-6-4
Kino, H.----------------------------------- PS-2-5, E-6-2
Kinoshita, K.------------------------------ A-4-3, O-3-4
Kishida, S.------------------------------------------ O-3-4
Kishimoto, K.----------------------------------- PS-13-2
Kishimoto, S.--------------------------------------- D-3-3
Kishino, K.-------------------------------PS-8-10, H-6-3
Kita, K.---------------------- PS-14-7, PS-14-10, J-1-3,
N-4-2, N-4-3
Kita, T.----------------------------------------------- A-7-1
Kitabayashi, Y.------------------------PS-14-15, M-5-3
Kitada, T.---------------------------------- PS-7-9, A-7-6
Kitagawa, S.--------------------------------------- M-1-4
Kitai, H.----------------------------- J-2-2, J-6-4, M-3-2
Kitamori, T.----------------------------------------- C-6-3
Kitamura, S.---------------------------------------- H-3-5
Kitao, A.--------------------------------------------- H-3-5
Kiuchi, Y.-------------------------------------------- J-6-4
Kiyota, Y.---------------------------------------- PS-15-1
Kiyoyama, K.----------------------------------------F-2-5
Kizilyalli, I.C.------------------------------------- M-4-1
Kizu, T.------------------------------------------- PS-7-22
Klamchuen, A.--------------------------------- PS-13-21
Ko, S.C.-------------------------------------------- PS-6-5
Ko, T.S.-------------------------------- PS-6-6, PS-13-15
Kobashi, K.----------------------------------------- D-3-2
Kobayashi, E.--------------------------------------- E-4-1
Kobayashi, K.------------------------------E-4-3, K-7-3
Kobayashi, M.-------------- PS-7-22, PS-14-15, K-5-1
Kobayashi, S.--------------------------------------- H-6-2
Kobayashi, T.--------PS-8-17, PS-15-8, E-2-4, M-3-4
Kobayashi, Y.----------- PS-2-15, J-1-1, K-5-2, N-1-2
Kodaira, R.------------------------------------------ D-6-3
Koga, T.---------------------------- PS-12-14, PS-12-15
Koganezawa, T.-------------------------------- PS-12-13
Kogure, K.------------------------------------------ G-3-7
Kohama, K.------------------------------------------J-2-4
Kohara, Y.------------------------------------------PS-5-5- 51 -

Kohda, M.----------------------------------- P-1-3, P-1-5
Koike, M.---------------------------------- N-1-3, N-3-1
Koishi, R.------------------------------------------- O-3-4
Koishikawa, Y.---------------------------------- PS-14-4
Kojima, K.------------------------------------------- J-6-4
Kojima, N.------------------------------------------ C-6-1
Kojima, R.------------------------------------------ A-5-5
Kojima, T.--------------------------------------------J-1-1
Kojima, Y.------------------------------------------PS-5-8
Kominami, H.------------------------------------- PS-8-6
Komiya, K.----------------------------------------- A-5-5
Komoda, T.----------------------------------------- D-6-4
Kompala, B.K.------------------------------------- K-6-1
Konabe, S.------------------------------------ PS-13-23L
Konagai, M.------------------------------------- PS-15-9
Kondo, D.---------------------------------------- PS-13-8
Kondo, M.------------------------------------------ C-6-3
Kondo, T.--------------------------------- PS-15-1, E-4-3
Konishi, T.---------------------- PS-2-3, E-4-4L, E-7-2
Koo, R.Y.------------------------------------------- PS-8-3
Kosaka, K.------------------------------------------- J-1-2
Kosar, S.--------------------------------------------- C-6-3
Koukitu, A.-----------------------------------------M-5-4
Kouno, T.--------------------------------PS-8-6, PS-8-10
Kouvetakis, J.------------------------------------- PS-8-1
Koyama, H.---------------------------------------- PS-9-4
Koyama, J.-------------------------------- PS-4-3, O-1-3
Koyama, T.-------------------------------------------P-1-4
Koyanagi, M.-------- PS-2-5, PS-2-9, PS-2-12, E-6-2
Kozu, M.-------------------------------------------- D-7-6
Kozuma, M.---------------------------------------- O-4-3
Krause, H.M.--------------------------------------- G-3-4
Kruska, C.------------------------------------------- A-7-4
Ku, S.H.--------------------------------------------- K-7-4
Ku, T.K.------------------------------------------ PS-9-10
Kuan, C.H.------------------------------PS-7-3, PS-7-19
Kubo, M.--------------------------------------------M-3-5
Kubo, N.------------------------------------------- PS-5-5
Kubo, T.------------------------------------------ PS-6-13
Kubota, H.----------------------- PS-12-8, P-3-5, P-3-6
Kubota, O.------------------------------------------ H-3-5
Kubota, T.------------------------------ PS-4-2, PS-12-7
Kudo, K.-------------------------------------------- G-5-4
Kuehnapfel, S-------------------------------------- C-3-1
Kuga, K.------------------------------------------ PS-7-23
Kumagai, N.------------------------------ PS-7-9, A-7-6
Kumagai, S.------------------------------ PS-11-2, F-7-5
Kumagai, Y.-----------------------------------------M-5-4
Kumaki, D.-------------------------------------- PS-10-2
Kumano, H.----------------------------------------- H-6-4
Kumazaki, Y.--------------------------------------- D-7-5
Kunihashi, Y.--------------------------------------- P-1-3
Kuno, T.------------------------------------------ PS-8-17
Kuno, Y.------------------------------------------ PS-7-10
Kunugi, R.------------------------------------------ N-4-3
Kunugita, H.------------------------------------- PS-15-1
Kuo, C.C.---------------------------------------- PS-2-16
Kuo, H.C.-----------PS-6-8, PS-7-17, PS-15-8, A-1-3
Kuo, S.N.------------------------------------------- K-5-3
Kuo, S.Y.----------------------------------------- PS-15-5
Kuo, Y.H.------------------------------------------- O-6-4
Kurabayashi, K.-------------------------------------F-3-1
Kurabayashi, S.------------------------------------ D-2-4
Kuramata, A.---------------------------------------M-5-4
Kuramochi, Y.------------------------------------- PS-2-7
Kurata, K.---------------------------------------- PS-7-14
Kurata, M.------------------------------------------M-6-4
Kuribara, K.------------------------ PS-10-3, PS-10-9L
Kuriyama, H.----------------------------------- PS-15-14
Kuroda, A.-------------------------------------------F-5-4
Kuroda, R.---------------------------------PS-3-2, E-7-5
Kuroda, T.------------------------------------------- H-6-4
Kurokawa, Y.---------------------- F-1-3, K-5-2, O-4-3
Kuroki, N.-------------------------------- PS-5-6, PS-5-8
Kurosawa, H.--------------------------------------- H-6-4
Kurosawa, M.----------------- PS-1-9, PS-1-12, G-4-1
Kurosawa, T.------------------------------------- PS-13-8
Kushimoto, M.------------------------------------PL-2-1
Kushwaha, P.--------------------------------------- K-6-1
Kuwabara, T.---------------------------- PS-15-3, C-1-4
Kuwata, Y.----------------------------------------- PS-4-5
Kuzmik, J.------------------------------------------M-2-1
Kuzuhara, M.-------------------------------------M-2-2L
Kwon, M.W.------------------------------------- PS-3-11

Kwon, S.H.------------------------------------ PS-2-18L

L

Lacord, J.-------------------------------------------- K-4-2
Lafond, D.----------------------------------E-2-5, N-1-1
Lagae, L.-------------------------------------------- A-6-1
Lai, C.C.----------------------------------------PS-15-12
Lai, C.F.------------------------------------------ PS-7-18
Lai, C.S.------------------- PS-11-1, PS-11-3, PS-11-6,
PS-11-12L, D-3-5
Lai, E.K.-------------------------------------------- O-3-5Lai, F.I.------------------------------------------- PS-15-5
Lai, H.C.-------------------------------------------- G-7-3
Lai, L.H.---------------------------------------- PS-15-13
Lai, R.-----------------------------------------------M-1-3
Lai, W.L.-------------------------------------------- O-7-2
Lai, W.T.--------------------------------PS-9-8, PS-9-11
Lai, Y.C.----------------------------------PS-7-18, A-1-4
Lambrechts, A.------------------------------------- A-6-1
Lan, W.H.---------------------------------------- PS-7-13
Lan, Y.P.---------------------------------PS-6-9, PS-14-2
Lange, M.-------------------------------------------M-1-3
Lapras, V.---------------------------------- K-4-3, N-1-1
Laszczyk, K.U.------------------------------------- D-3-2
Lau, K.M.----------- PS-7-17, PS-8-11, A-7-3, M-7-4
Le Friec, Y.----------------------------------------- K-4-3
Le Roux, X.----------------------------------------- A-4-1
Le Royer, C.---------------------------------------- N-2-3
Le, S.P.--------------------------------------------- M-2-5
Lee, C.C.------------------------------------------ H-7-5L
Lee, C.H.-------------------------------------------- N-4-1
Lee, C.T.------------------------------------------- M-7-6
Lee, C.W.------------------------------------------- K-7-4
Lee, C.Y.-------------------------------------------PS-6-9
Lee, D.Y.-------------------------------------------- O-3-5
Lee, F.M.-------------------------------------------- O-3-5
Lee, G.W.---------------------------------------- PS-6-24
Lee, H.------------------------------------ PL-2-1, PS-6-5
Lee, H.D.----------------------------------------- PS-6-24
Lee, H.S.-------------------------------------------PS-6-5
Lee, H.Y.------------------------------- PS-9-10, H-7-5L
Lee, HL.----------------------------------------- PS-13-10
Lee, J.------------------------------------------------M-1-3
Lee, J.G.------------------------------------------ PS-6-12
Lee, J.H.-------------------------------------------- PS-6-1
Lee, J.M.-------------------------------------------- K-3-4
Lee, J.W.------------------------------------------- PS-1-5
Lee, K.-------------------------------------------- PS-2-12
Lee, K.B.---------------------------------PS-5-12, O-6-3
Lee, K.H.----------------------------------------- PS-13-3
Lee, K.J.--------------------------------------------- O-7-1
Lee, K.L.-------------------------------------------- F-7-1
Lee, K.T.-------------------------------------------- O-6-3
Lee, K.W.------------------------------------------ PS-2-9
Lee, K.Y.-------------------------------------------- F-3-4
Lee, M.H.----------------------PS-1-5, PS-9-10, O-3-5
Lee, M.L.-------------------------------PS-7-3, PS-7-19
Lee, M.Y.-------------------------------------------- G-3-5
Lee, P.T.-------------------------------------A-6-2, A-6-3
Lee, S.----------------------------------------------- G-7-5
Lee, S.J.-----------------------------------------PS-2-18L
Lee, S.S.--------------------------------------------- O-3-4
Lee, T.H.-------------------------------------------- B-4-4
Lee, T.M.-------------------------------------------- N-1-4
Lee, T.N.----------------------------------------- PS-6-20
Lee, W.K.----------------------------------------- H-7-3L
Lee, Y.J.----------------------------------- PS-1-6, N-1-4
Lehmann, M.--------------------------------------- G-3-4Lei, D.----------------------------------------------- D-2-2
Lekhal, K.------------------------------------------PL-2-1
Lelis, A.----------------------------------------------J-6-1
Lemme, M.----------------------------------------- B-5-4
Leong, K.-------------------------------------------M-1-3
Leong, W.S.----------------------------------------- D-2-3
Li, C.C.---------------------------------------------- N-1-4
Li, H.------------------------------------------------ A-5-4
Li, H.Y.---------------------------------------------- E-6-4
Li, J.R.-------------------------------------------- PS-7-17
Li, J.S.---------------------------------------------- PS-6-6
Li, J.X.------------------------------------------- PS-15-8
Li, L.J.----------------------------------------------- B-4-4
Li, M.C.--------------------------------------------- N-1-4
Li, M.Y.--------------------------------------------- B-4-4
Li, P.W.----------------------------------PS-9-8, PS-9-11

Li, Q.---------------------------------------A-7-3, M-7-4
Li, X.------------------------------------------------ N-3-4
Li, Y.-------------------PS-12-16, D-2-3, G-3-5, K-7-2
Li, Y.R.------------------------------------------- PS-11-7
Li, Z.------------------------------------------------- F-2-2
Li, Z.Y.--------------------------------------------- PS-6-8
Liang, G.----------------------------------------- PS-12-1
Liang, J.------- PS-14-5, PS-14-11, PS-14-12, M-2-6
Liang, R.R.-------------------------------------- PS-8-15
Liao, C.Y.------------------------------------------PS-1-7
Liao, H.H.---------------------------------------- PS-5-12
Liao, M.H.----------------------------------------- PS-1-5
Liao, P.H.------------------------------------------PS-9-8
Liao, S.W.------------------------------------------- A-1-3
Lim, H.L.------------------------------------------ PS-4-8
Lim, S.L.-------------------------------------------- G-5-2
Lin, B.W.----------------------------------------- PS-7-19
Lin, C.-----------------------------------------------M-6-1
Lin, C.-H.------------------------------------------- K-4-1
Lin, C.C.----------------------------------------- PS-7-17
Lin, C.F.---------------------------------PS-11-10, E-4-2
Lin, C.H.------------------------------------------- PS-8-7
Lin, C.J.------------------------------------ K-3-2, O-6-4
Lin, C.P.-------------------------------------B-4-4, O-6-4
Lin, D.Y.------------------------------ PS-6-6, PS-13-15
Lin, G.Y.------------------------------------------- PS-1-3
Lin, H.---------------------------------------------- PS-5-3
Lin, H.C.----------------------------------------- PS-6-22
Lin, H.W.----------------------------------------- PS-10-5
Lin, H.Y.------------------------------ PS-7-16, PS-7-17
Lin, J.T.------------------------------------------ PS-15-12
Lin, J.Y.------------------------------------------ PS-2-16
Lin, K.W.------------------------------------------- PS-3-6
Lin, P.K.-------------------------------------------- PS-7-2
Lin, P.Y.--------------------------------------------- K-3-2
Lin, R.M.----------------------PS-6-9, PS-7-3, PS-7-19
Lin, S.Y.-------------------------------------------- PS-7-5
Lin, T.-H.----------------------------------------- PS-11-8
Lin, T.H.---------------------- PS-7-20, PS-7-21, M-6-1
Lin, T.W.----------------------- PS-1-1, PS-6-2, PS-6-3
Lin, W.-------------------------------------------PS-6-25L
Lin, Y.C.--------------PS-1-1, PS-1-2, PS-1-3, PS-6-2,
PS-6-3, PS-6-7, H-7-5L, M-1-2, M-7-5
Lin, Y.D.----------------------------------------- PS-9-10
Lin, Y.H.--------------------------------PS-3-6, PS-4-11
Lin, Y.R.---------------------------------PS-3-6, PS-4-11
Lin, Y.Y.--------------------------------------------- O-3-5
Lin, Z.------------------------------------------- PS-13-16
Lin, Z.c.-----------------------------------------PS-12-17
Linder, N.------------------------------------------- A-1-1
Ling, Z.P.-------------------------------------------- D-2-2
Liu, B.---------------------------------- PS-12-14, D-3-5
Liu, C.---------------------------------------------- PS-1-5
Liu, C.C.-------------------------------------------PS-6-7
Liu, C.H.---------------------------------------------F-3-4
Liu, H.L.----------------------------------------- PS-11-3
Liu, H.x.------------------------------- PS-12-5, PS-12-6
Liu, J.----------------------------------------------- PS-5-4
Liu, K.---------------------------------------------- PS-7-4
Liu, K.C.----------------------------------------- PS-6-22
Liu, L.----------------------------- PS-5-4, F-1-2, K-7-4
Liu, L.F.--------------------------------------------- O-3-1
Liu, L.J.--------------------------------------------- N-1-4
Liu, M.------------------------------------------- PS-4-10
Liu, P.H.---------------------------------------------M-1-3
Liu, P.S.--------------------------------------------- B-4-4
Liu, P.Y.---------------------- PS-7-20, PS-7-21, M-6-1
Liu, Q.-------------------------------------------- PS-4-10
Liu, R.---------------------------------------------- PS-9-6
Liu, S.N.------------------------------------------- PS-1-5
Liu, T.C.------------------------------------------ PS-1-10
Liu, W.J.-------------------------------------------- PS-4-4
Liu, X.-------------------------- PS-3-1, PS-14-6, H-6-4
Liu, X.Y.----------------------------------- K-7-2, O-3-1
Liu, Y.---------------------------------- PS-12-20, K-1-5
Liu, Y.X.------------------------ PS-1-13, H-7-2, N-2-1
Lo, Y.Z.------------------------------------------- PS-3-16
Lodha, S.------------------------------------------- PS-3-5
Lomas, T.----------------------------------------- PS-13-7
Long, S.B.--------------------------------------- PS-4-10
Longnos, F.----------------------------------------- O-1-1
Loo, R.---------------------------------------------- G-4-4
Loquet, Y.------------------------------------------- K-4-3- 52 -

Loup, V.------------------------------------------ PS-2-13
Lu, C.------------------------------------------------ N-4-1
Lu, C.J.-----------------------------------------------F-5-2
Lu, C.M.V.--------------------------------------- PS-2-13
Lu, C.Y.--------------------------------------------- O-3-5
Lu, S.L.------------------------------------ PS-7-4, E-6-3
Lu, T.C.---------------------------------------------- K-7-4
Lu, T.W.-------------------------------------A-6-2, A-6-3
Lu, V.--------------------------------------- K-4-3, N-1-1
Lu, W.P.--------------------------------------------- K-7-4
Lu, X.M.-------------------------------------------- A-7-6
Lu, Y.J.---------------------------------------- PS-11-12L
Luc, Q.H.-----------------------PS-1-2, PS-1-3, M-7-5
Luce, F.P.-------------------------------------------- N-1-1
Lun, Z.Y.-------------------------------------------- K-7-2
Lung, H.L.------------------------------------------ O-3-5
Luo, J.----------------------------------------------- A-2-4
Luo, S.---------------------------------------------- PS-7-8
Luo, S.C.------------------------------------------- PS-9-8
Luo, X.---------------------------------------------- D-2-3
Lv, H.B.------------------------------------------ PS-4-10
Lyu, C.G.----------------------------------------- PS-11-3
Lyu, L.S.-------------------------------------------- B-4-4
M, Murugesan.------------------------------------PS-2-9
Ma, W.Q.------------------------------------------- PS-7-4
Ma, Y.--------------------------------------- A-1-6, O-4-2
Maa, J.S.---------------------- PS-1-1, PS-6-2, PS-6-3,
PS-6-7, M-1-2
Machida, H.-------------------------------------- PS-8-13
Machida, K.------------PS-2-1, PS-2-3, E-4-4L, E-7-2
Machida, S.------------------------------ PS-14-1, J-1-5
Machida, T.----------------------------------------- B-4-2
Madeira, F.------------------------------------------ N-5-3
Maeda, S.-----------------------------------F-1-3, K-5-2
Maeda, T.---------------PS-15-7, C-3-4, K-2-3, K-6-3,
N-1-3, N-3-1
Maeda, Y.---------------------------------------- PS-5-11
Maekawa, M.--------------------------------------- H-6-3
Maekawa, T.---------------------------------------- A-7-6
Maekura, T.----------------------------------------- A-4-4
Maensiri, S.--------------------------------------- G-3-2L
Maezawa, K.-------------------- PS-2-2, PS-8-8, M-1-5
Maiti, T.K.--------------------------------------- PS-10-1
Maitrejean, S.--------------------------------------- K-4-3
Majeed, B.-----------------------------------------F-3-5L
Majlis, B.Y.-------------------------------------- PS-7-12
Makarov, A.------------------------------------ PS-4-12L
Makihara, K.---------------------------------------- G-3-6
Makino, T.---------------------------- PS-14-19L, J-2-3
Makita, K.------------------------------------------- C-6-3
Manaka, T.------------------------------------------ C-4-3
Manfrini, M.------------------------------------PS-13-13
Manipatruni, S.------------------------------------- O-5-1
Mannequin, C.-------------------------------------PS-4-7
Manning, M.---------------------------------------- O-7-3
Mano, T.--------------------------------------------- H-6-4
Mariolle, D.----------------------------------------- E-2-5
Marris Morini, D.---------------------------------- A-4-1
Marseilhan, D.-------------------------------------- N-2-3
Martens, D.----------------------------------------- A-6-1
Martin, M.------------------------------------------ N-5-3
Martinie, S.----------------------------------------- K-4-2
Maruyama, M.----------------------------------- PS-13-4
Maruyama, S.--------------------------------------- C-1-5
Marzegalli, A.-------------------------------------- G-3-4
Masahara, M.--------- PS-1-13, PS-3-8, K-1-4, N-2-1
Masu, K.---------------PS-2-1, PS-2-3, E-4-4L, E-7-2
Masubuchi, S.-------------------------------------- B-4-2
Masuda, A.------------------PS-8-6, PS-15-18L, C-7-7
Masumoto, Y.-------------------------------------- PS-8-5
Mathieu, B.----------------------------------------- N-1-1
Matsubayashi, D.------------- PS-6-23, M-6-3, M-6-4
Matsuda, M.---------------------------------- PS-11-13L
Matsuda, S.--------------------- PS-6-23, E-4-3, M-6-3
Matsuhisa, N.--------------------------------------- C-4-4
Matsui, T.------------------------------------------- C-6-3
Matsukawa, T.-------- PS-1-13, PS-3-8, K-1-4, N-2-1
Matsumoto, A.----------------------------- A-3-5, G-3-3
Matsumoto, M.------------------------------------- F-6-2
Matsumoto, R.-------------------------------------- E-1-5
Matsumoto, S.------------------------ PS-14-3, PS-14-4
Matsumoto, T.----------------------------- E-1-5, M-5-2
Matsumura, D.------------------------PS-14-15, M-5-3

Matsumura, H.------------------------------------- C-7-5
Matsumura, K.-------------------------------------- J-1-2
Matsumura, R.-------------------------------------- G-5-3
Matsuno, T.----------------------------------------F-3-5L
Matsuo, N.----------------------------- PS-8-24, PS-9-5
Matsuo, Y.------------------------------------------- C-1-5
Matsuoka, T.---------------------------------------- G-1-4
Matsushima, H.--------------------------------- PS-14-8
Matsushita, T.------------------------------------ PS-15-1
Matsuura, K.------------------------------------- PS-8-13
Matsuura, T.------------------------------------ PS-12-14
Matsuyama, H.-------------------------------------M-2-4
Matsuzaka, K.---------------------------------------F-1-1
Matsuzaki, T.--------------------------------------PS-4-3
Matsuzaki, Y.--------------------------------------- H-6-2
Matsuzawa, K.------------------------------------- K-3-3
Mattausch, H.J.------PS-5-1, PS-5-2, PS-10-1, M-4-3
Matthies, K.----------------------------------------- E-7-4
Maury, P.----------------------------------------- PS-2-13
Mawatari, K.---------------------------------------- C-6-3
Mayr, C.--------------------------------------------- H-3-6
Mazen, F.-------------------------------------------- N-5-3
Md Zain, A.R.----------------------------------- PS-7-12
Medury, A.S.---------------------------------------- K-6-1
Mei, X.B.------------------------------------------ M-1-3
Meng, F.H.------------------------------------------ K-3-2
Meng, H.F.--------------------------------------- PS-10-5
Meng, X.----------------------------------------- PS-8-17
Mestres, N.--------------------------------------- PS-8-16
Miao, M.------------------------------------------- PS-2-8
Michallet, A.------------------------------------- PS-2-13
Micusik, M.----------------------------------------- O-7-2
Migita, S.----------- PS-1-13, PS-1-20L, K-1-3, N-2-1
Mihara, K.----------------------------------------- PS-5-1
Mikamura, Y.--------------------------------- PS-14-17L
Mimura, T.------------------------ PS-6-26L, PS-6-27L
Minami, T.------------------------------------------ G-7-2
Minami, Y.----------------------------------------- PS-5-9
Minamiki, T.---------------------------------------- G-7-2
Mintova, S.----------------------------------------- E-7-3
Mirza, R.-------------------------------------------- G-3-7
Mishima, T.----------------------------- PS-6-10, M-7-2
Mishima, Y.-----------------------------------------M-1-1
Mita, Y.----------------------------------- PS-5-10, E-7-3
Mitsunari, T.---------------------------------------PL-2-1
Miura Mattausch, M.------- PS-10-1, PS-14-9, M-4-3
Miura, H.------------PS-2-4, PS-2-17, PS-13-6, D-3-1
Miura, K.----------------------------------------- PS-12-3
Miura, M.------------------------------------------- A-3-2
Miura, S.-------------------------------------------- O-4-2
Miwa, K.---------------------------------------------P-1-4
Miwa, S.----------------------------------PS-12-8, H-6-2
Miyachi, Y.--------------------------------------- PS-8-25
Miyairi, H.------------------------ PS-4-3, F-1-3, O-4-3
Miyaji, K.------------------------------------------- O-6-2
Miyajima, S.---------------- PS-15-9, PS-15-11, C-7-3
Miyamoto, J.------------------------------------- PS-15-4
Miyamoto, Y.-----------------PS-6-25L, D-2-5, M-1-1
Miyamura, M.-------------------------------------- O-4-4
Miyano, S.-------------------------------------------F-6-1
Miyao, M.---------------------------------- G-4-3, G-5-3
Miyasaka, Y.---------------------------------------- A-4-2
Miyashita, H.--------------------------------------- O-3-4
Miyata, Y.------------------------------------------PS-4-1
Miyazaki, H.---------------------------------------- E-1-5
Miyazaki, S.---------------------------------------- G-3-6
Miyoshi, H.----------------------------------------- N-1-2
Miyoshi, M.--------------------------- PS-6-11, PS-6-13
Mizoguchi, T.-------------------------------------- M-4-3
Mizubayashi, W.-------------------------------- PS-1-13
Mizuguchi, M.----------------------------------PS-12-13
Mizukami, S.---------------------------- PS-12-4, A-2-2
Mizukoshi, M.------------------------------------- PS-2-7
Mizuno, J.------------------------------------------- E-6-1
Mizuno, S.---------------------------------- C-5-1, F-7-3
Mizuno, T.--------------------------------- K-6-3, N-6-2
Mizuno, Y.--------------------------------------- PS-13-8
Mizuochi, N.---------------------------------------- H-6-2
Mizuta, H.------------------------------------------- B-5-2
Mizutani, N.---------------------------------------- C-4-2
Mizutani, T.----------------------------------------- K-5-1
Mochizuki, H.----------------------------------- PS-15-2
Mochizuki, K.----------------------------------- PS-14-8

Mocuta, A.C.----------------------------------- PS-13-13
Mogami, T.------------------------------------------ A-4-3
Moges, Kidist.------------------------ PS-12-5, PS-12-6
Mokuno, Y.-------------------------- PS-14-19L, M-5-2
Molas, G.-------------------------------------------- O-1-1
Monemar, B.----------------------------------------M-5-4
Monfray, S.-------------------------------- K-4-2, N-2-2
Montalenti, F.--------------------------------------- G-3-4
Morand, Y.--------------------------------- N-2-2, N-2-3
Morgan, K.-----------------------------------------PS-4-9
Mori, I.------------------------------------------- PS-5-10Mori, M.-------------------------PS-2-2, PS-8-8, M-1-5
Mori, T.---------PS-1-13, K-1-4, N-1-3, N-2-1, N-3-1
Mori, Y.----------------------------------------------- J-2-4
Morie, T.---------------------------------------------F-1-1
Morikawa, S.--------------------------------------- B-4-2
Morikawa, Y.------------------------------------ PS-14-9
Morioka, A.----------------------------------------- O-4-4Morishita, H.--------------------------------------- H-6-2
Morita, T.--------------------------------------------M-4-4
Morita, Y.------------------ PS-1-13, PS-15-10, D-4-4,
K-1-4, N-2-1
Morito, K.-----------------------------------A-3-1, A-4-3
Moriwaka, T.---------------------------------------M-6-4
Moriwaki, S.-----------------------------------------F-6-1
Moriwaki, Y.---------------------------------- PS-11-13L
Moriya, R.------------------------------------------ B-4-2
Moriyama, T.--------------------------------------- O-3-4
Moselund, K.--------------------------------------- D-4-1
Moto, K.------------------------------------ G-5-3, G-5-5Motohisa, J.-------------------------------- D-4-3, K-2-4
Motoi, T.-------------------------------------------- H-3-5
Motoyama, M.---------------------------------------F-7-2
Mu, F.------------------------------------------------ E-2-3
Mueller, J.------------------------------------------- O-2-1
Mugny, G.------------------------------------------- K-2-2
Mukai, K.------------------------------------------- H-7-4
Mukaiyama, K.------------------------------------- P-3-5
Mukund, V.----------------------------------------- A-6-1
Mun, J.K.------------------------------------------ PS-6-5
Munakata, F.------------------------------------- PS-15-4
Munekata, H.-------------------------- PS-7-23, A-2-5L
Muraguchi, M.--------------------------- PS-9-9, O-5-2
Murakami, E.-----------------------------------PS-14-13
Murakami, H.------------------------------ C-6-2, M-5-4
Murakawa, T.------------------------------ K-7-1, O-1-4
Murakumo, K.-------------------------------------PS-7-9
Muralidharan, B.-------------------------------- PS-12-9
Muramatu, K.--------------------------------------- E-1-2
Murase, S.---------------------------------------- PS-6-10
Murata, H.----------------------------PS-10-10L, C-4-5
Murata, N.--------------------------------------- PS-11-9
Murayama, A.--------- PS-8-12, PS-12-16, PS-12-19,
A-1-4, G-3-1, P-3-3
Muruganathan, M.--------------------------------- B-5-2
Murugesan, M.---------------------------------- PS-2-12

N

Na, J.H.--------------------------------------------- PS-6-5
Nagahama, T.-------------------- PS-10-11L, PS-12-11
Nagahisa, T.-----------------------------------------M-3-5
Nagai, C.----------------------------------------- PS-2-12
Nagamine, Y.------------------------------ K-6-3, N-6-2
Naganawa, M.------------------------------------- M-7-2
Naganuma, H.------------------------------ P-1-6, P-3-5
Nagao, S.-------------------------------------------- E-2-1
Nagaoka, Y.-------------------------------------- PS-1-11
Nagashima, K.---------------------------------- PS-13-21
Nagashio, K.--------------------- D-2-4, D-3-4, D-3-6L
Nagata, K.--------------------------------------------F-2-4
Nagata, T.------------------------------------------- E-1-3
Nagatomi, Y.------------------------------------- PS-1-11
Nagatsuka, S.-------------------------------------- PS-4-3
Nagaya, M.------------------------------------- PS-14-16
Nagoshi, T.------------------------------------------ E-4-1
Nair, D.R.------------------------------------------ PS-3-4
Naitoh, S.------------------------------------------- C-5-3
Naka, T.----------------------------------- M-3-4, M-4-3
Nakada, K.-------------------------------PS-12-3, C-7-3
Nakagawa, A.------------------------------------ PS-1-15
Nakagawa, K.------------------PS-14-3, A-2-1, M-2-4
Nakagawa, T.------------------------------- F-1-3, O-4-3
Nakahara, K.------------------------------ M-4-2, M-7-3
Nakajima, H.--------------------------------------- H-6-4- 53 -

Nakajima, K.----------------------------------- PS-13-19
Nakamura, A.------------------------------------ PS-2-12
Nakamura, G.--------------------------------------- N-1-2
Nakamura, H.----------------------------------------F-7-4
Nakamura, K.---------------- PS-5-5, PS-13-20, D-6-4
Nakamura, S.-------------------------------------- PS-9-5
Nakamura, T.----- PS-1-14, PS-2-15, PS-6-10, A-3-2
Nakamura, Y.------------------------- PS-8-24, PS-15-1
Nakane, A.------------------------------------------ O-3-2
Nakanishi, H.-------------------------------C-6-2, G-1-5
Nakanishi, T.------------------------------------- PS-2-17
Nakano, D.-----------------------------------------PS-2-2
Nakano, N.----------------------------------------- PS-5-9
Nakano, Y.------------------------------------------ A-1-4
Nakaoka, T.----------------------------------------- H-6-3
Nakasha, Y.-------------------------------------PS-6-27L
Nakashima, H.--------------------------- PS-1-11, A-4-4
Nakashima, M.-------------------------------------M-6-2
Nakasu, T.---------------------------------------- PS-7-22
Nakata, D.-------------------------------------------- J-6-4
Nakata, M.------------------------------------------ D-7-2
Nakata, Y.---------------------------------------- PS-2-15
Nakatsuka, O.---------------- PS-1-9, PS-1-12, G-4-1,
G-4-4, J-6-3
Nakayama, D.-------------------------------------- O-2-5
Nakayama, T.--------------------------------------- N-6-3
Nakayama, Y.------------------------------------ PS-11-2
Nakazawa, H.--------------------------------------- E-2-3
Nakazawa, S.-------------------------------------- M-2-3
Nakura, T.--------------------------------------------F-1-4
Nam, E.S.------------------------------------------ PS-6-5
Nam, M.-----------------------------------------PS-2-18L
Namuangruk, S.--------------------------------- PS-10-8
Naruki, W.-------------------------------------------J-2-3
Narusawa, H.-------------------------------------- PS-2-7
Natal, M.---------------------------------------- PS-14-14
Navarro, D.-------------------------------------- PS-14-9
Negoro, N.------------------------------------------M-2-3
Nestu, S.---------------------------------------------M-1-1
Neutens, P.------------------------------------------ A-6-1
Nguyen, H.Q.-------------------------------------- PS-8-4
Nguyen, T.Q.---------------------------------------M-2-5
Niermann, T.---------------------------------------- G-3-4
Niinuma, Y.-------------------------------------- PS-10-7
Nijhuis, C.A.--------------------------------------- G-7-1
Nikonov, D.----------------------------------------- O-5-1
Nimura, M.----------------------------------------- E-6-1
Ning, S.Y.---------------------------------- O-7-3, O-7-4
Nishi, D.------------------------------------------ PS-10-7
Nishibayashi, K.---------------------- PS-7-23, A-2-5L
Nishida, S.--------------------------------------- PS-14-5
Nishide, D.------------------------------------------ E-1-5
Nishiguchi, K.-------------------------------------- H-3-1
Nishihara, H.------------------------------------ PS-15-7
Nishimura, H.-------------------------------------- G-5-5
Nishimura, T.----------- PS-1-10, PS-1-14, PS-1-20L,
H-3-3, N-3-2, N-3-4,
N-4-1, N-4-4
Nishino, G.--------------------------------------- PS-6-11
Nishino, S.-------------------------------------------F-2-5
Nishio, Y.----------------------------------------- PS-6-18
Nishioka, Y.----------------------------------------- E-1-2
Nishiyama, N.----------------------------------- PS-7-10
Nishizawa, N.------------------------------------ A-2-5L
Nitta, J.-------------------------------------- P-1-3, P-1-5
Niu, G.----------------------------------------------- G-3-4
Niwa, M.-------------------------------------------- O-5-4
Nobeshima, T.----------------------------------- PS-10-6
Noda, K.-------------------------------------A-2-3, A-3-6
Noda, M.--------------------------------- PS-11-9, F-3-3
Noda, T.----------------------------- F-2-3, F-2-4, F-7-2
Noguchi, M.---------------------------------------- A-3-2
Nohira, H.---------------------------------------- PS-1-18
Noma, T.-------------------------------------------- C-4-3
Nomitsu, T.----------------------------------------- G-5-4
Nomura, K.-----------------------------------------M-5-4
Nomura, Y.--------------------------------------PS-12-19
Nonomura, S.----------------------------------- PS-15-14
Nori, F.---------------------------------------------- H-7-2
Norimatsu, M.----------------------------------- PS-13-8
Nose, Y.---------------------------------------- PS-8-28LNoya, A.------------------------------------------ PS-2-15
Nozaka, T.------------------------------------------- H-7-4

Nozaki, S.------------------------------ PS-15-17, A-1-2
Nozaki, T.------------------------------------------- D-3-1
Nozawa, T.----------------------------------------- PS-4-2
Numa, M.-------------------------------- PS-5-6, PS-5-8

O

O'Callaghan, J.------------------------------------- A-6-1
O'uchi, S.------------------------ PS-1-13, K-1-4, N-2-1
Obinata, A.------------------------------------------ P-1-4
Oda, K.-------------------------PS-14-13, A-5-2, A-5-3
Oda, S.----------------------------------------------- B-5-2
Oehme, M.------------------------------------------ E-7-4
Ofuji, K.--------------------------------------------- G-3-7
Ogawa, M.------------------------------------------M-3-3
Ogura, A.----------------PS-8-13, C-7-2, C-7-4, N-4-3
Ogura, M.-------------------------------------------- J-2-3
Ogura, S.----------------------------------------- PS-10-3
Oguri, K.-------------------------------------------- H-7-1
Oh, B.R.----------------------------------------------F-3-1
Oh, C.------------------------------------------ PS-15-19L
Ohashi, K.-------------------------------------------M-1-1
Ohashi, T.---------------------------------------- PS-8-13
Ohdaira, K.------------------ PS-15-18L, C-7-1, C-7-5
Ohkubo, K.----------------------------------- PS-10-10L
Ohmagari, S.----------------------------------------M-5-2
Ohmaru, T.-------------------------------------------F-1-3
Ohnishi, M.-------------------------------------- PS-13-6
Ohno, H.---------------------------O-4-1, O-4-2, O-5-4
Ohno, T.--------------------------------------------- O-2-5
Ohno, Y.------------------------------------ D-3-3, O-3-2
Ohsato, H.------------------------------------------ PS-7-7
Ohsawa, K.-----------------------------------------M-1-1
Ohshima, K.---------------------- K-7-1, M-6-3, O-1-4
Ohshima, T.----------------------------------- PS-14-19L
Ohta, A.--------------------------------------------- G-3-6
Ohta, H.----------------------------------------- PS-12-11
Ohta, J.------------------------------ F-2-3, F-2-4, F-7-2
Ohta, T.------------------------------------------- PS-11-2
Ohta, Y.-----------------------------------------------F-7-2
Ohuchida, S.---------------------------------------- O-5-2
Ohyama, M.---------------------------------------- E-6-1
Oikawa, T.------------------------------------------ O-2-2
Oishi, K.------------------------------------------ PS-14-4
Oka, M.---------------------------------------------- N-1-2
Okada, H.------------------------------------------- E-2-4
Okada, K.------------------------------------------- A-2-3
Okada, S.------------------ PS-13-2, PS-13-4, PS-13-5,
PS-13-9, PS-13-12, B-5-3
Okada, Y.----------------------------------- C-5-3, M-4-3
Okamoto, D.----------------------------------------- J-6-2
Okamoto, H.------------------------------- G-5-4, G-5-5
Okamoto, K.---------------------------------------- O-4-4
Okamoto, S.----------------------------------------M-6-4
Okamoto, Y.---------------------------------------- O-4-3
Okazaki, K.----------------------------------------- A-4-2
Okazaki, Y.--------------------------------- M-6-4, O-1-3
Okazawa, T.----------------------------------------- F-6-3
Okino, H.----------------------------------------- PS-14-8
Okuda, T.------------------------------------------- PS-4-3
Okumura, H.--------------------------J-1-1, J-6-2, J-6-4
Okumura, S.---------------------------------------- A-4-3
Okumura, T.---------------------------------------- A-5-3
Okunishi, R.------------------------------------- PS-8-25
Omastova, M.-------------------------------------- O-7-2
Omata, U.------------------------------------------- N-6-2
Omura, Y.------------------------------------------ PS-9-5
Ong, S.W.----------------------------- PS-8-3, PS-13-14
Ono, H.---------------------------------------------- A-4-3
Ono, K.---------------------------------------------- H-7-2
Ono, M.--------------------------------------------- K-3-3
Ono, S.--------------------------------------- J-6-4, P-1-4
Onoda, S.-------------------------------------- PS-14-19L
Onomitsu, K.----------------------------------------P-1-3
Onoue, S.-------------------------------------------- N-3-3
Onuki, T.---------------------------------- PS-4-3, O-1-3
Ooato, A.-------------------------------------------- G-4-3
Oogane, M.--------------------------------- P-1-6, P-3-5
Oomine, H.----------------------------------------- N-5-1
Orihara, D.----------------------------------------- PS-5-9
Ostling, M.------------------------------------------ B-5-4
Ota, H.------------------ PS-1-13, A-7-6, K-1-3, K-2-3
Ota, K.----------------------------------------------- C-7-6
Otani, M.----------------------------------------- PS-13-5
Otani, Y.--------------------------------------------- E-1-2
Otsuka, N.-------------------------------------------M-4-4

Otsuka, S.------------------------------------------- N-2-1
Oya, N.---------------------------------------------- G-4-2Oya, T.------------------------------------------------F-7-4
Ozaki, E.-------------------------------------------- H-3-5
Ozaki, N.-------------------------------------------PS-7-7
Ozaki, T.-------------------------------------------- PS-5-8Özyilmaz, B.---------------------------------------- B-5-1

P

Paak, S.---------------------------------------------- K-3-4
Palma, G.-------------------------------------------- O-1-1
Pan, D.----------------------------------------------- D-4-2
Pan, F.--------------------------------------------- A-2-6LPan, F.M.---------------------------------------- PS-11-11
Pan, H.W.------------------------------------------- O-6-4
Pan, H.Y.-------------------------------------------- D-7-4
Pan, J.------------------------------------------------M-1-5
Pan, J.S.----------------------------------------- PS-13-14
Pan, T.M.----------------------------------------- PS-6-21
Park, B.G.---------------------------------------- PS-3-11
Park, J.------------------------------------PS-3-11, G-4-3
Park, J.B.------------------------------------------- PS-6-5
Park, J.K.-------------------------------------------PS-7-6
Park, S.H.---------------------------------------- PS-6-12
Park, S.K.------------------------------------------- O-6-3
Park, Y.R.------------------------------------------ PS-6-5
Pasini, L.-------------------------------------------- N-1-1
Pedini, J.M.----------------------------------------- N-2-3
Pei, Z.------------------------------------------------ G-7-3
Peng, L.Y.---------------------------------------- PS-6-14
Peng, P.C.------------------------------------------- O-6-4
Perniola, L.----------------------------------------- O-1-1
Pesic, I.------------------------------------------- PS-14-9
Pham, S.T.--------------------------------------- PS-12-4
Phan, T.T.------------------------------------------PS-9-4
Pierre, F.------------------------------------------ PS-2-13
Pihosh, Y.------------------------------------------- C-6-3
Pimenta-Barros, P.--------------------------------- N-2-2
Plantier, C.------------------------------------------ N-2-3
Poborchii, V.-------------- PS-13-22, PS-15-10, D-4-4
Podpirka, A.-------------------------------------- H-7-3L
Polakowski, P.-------------------------------------- O-2-1
Pollet, O.-------------------------------------------- K-4-3
Pongpadung, S.---------------------------------- PS-8-27
Ponhan, W.---------------------------------------- G-3-2L
Posseme, N.-------------------------------------- PS-2-13
Prachumrak, A.---------------------------------- PS-10-8
Pradelles, J.----------------------------------------- N-2-2
Previtali, B.------------ PS-2-13, K-4-3, N-1-1, N-2-2
Promarak, V.------------------------------------- PS-10-8
Puebla Hellmann, G.------------------------------ H-7-6
Purwidyantri, A.--------------------------------- PS-11-6
Pyo, S.G.----------------------------------------PS-2-18L

Q

Qian, S.B.------------------------------------------PS-4-4
Quek, S.Y.------------------------------------------- D-2-3

R

Radu, I.P.---------------------------------------- PS-13-13
Rafhay, Q.------------------------------------------- K-2-2
Rahmat, A.----------------------------------------- PS-5-5
Rambal, N.--------------------------------- K-4-3, N-1-1
Ranjan, V.------------------------------------------- H-7-6
Reboh, S.----------------------------------- N-1-1, N-2-3
Rech, B---------------------------------------------- C-3-1
Ren, C.------------------------------------------- PS-11-3
Reuveny, A.----------------------------------------- G-7-5
Reynaud, O.---------------------------------------- C-1-5
Ribiere, C.------------------------------------------ K-4-3
Riddet, C.------------------------------------------ PS-3-1
Riedel, S.-------------------------------------------- O-2-1
Riel, H.---------------------------------------------- D-4-1
Rius, G.------------------------------------------- PS-8-16
Rivallin, P.------------------------------------------ N-1-1
Ro, Y.G.--------------------------------------------- C-5-2
Robertson, J.-------------- D-2-6, E-1-6, O-2-3, O-3-3
Rochat, N.---------------------------------------- PS-2-13
Rodriguez, G.--------------------------------------- E-2-5
Roman, A.------------------------------------------- K-4-3
Rosendale, G.--------------------------------------- O-7-3
Rottenberg, X.-------------------------------------- A-6-1
Rouchon, D.---------------------------------------- N-2-3
Rouifed, M.----------------------------------------- A-4-1
Roule, A.---------------------------------PS-2-13, N-2-3
Royer, A.-------------------------------------------- N-1-1- 54 -

Rozeau, O.--------------------------------- K-4-2, N-1-1
Ruan, Y.J.--------------------------------------- PS-13-15
Rudolf, F.---------------------------------------- PS-3-13
Rueckes, T.----------------------------- PS-4-13L, O-7-3
Ruppalt, L.---------------------------------------- H-7-3L
Ryu, J.C.-------------------------------------------- P-1-5
Ryu, M.Y.------------------------------------------PS-8-1
Ryu, S.O.------------------------------------------- PS-6-5

S

Sabbione, C.---------------------------------------- E-2-5
Saddow, S.E.------------------------------------ PS-14-14
Sadoh, T.----------------------------------- G-4-3, G-5-3
Safu, T.---------------------------------------------E-4-4L
Saha, A.K.------------------------------------------ A-7-7
Saito, A.---------------------------------- PS-11-5, F-7-3
Saito, H.------------------------ PS-12-10, E-4-3, P-3-2
Saito, S.--------------------------------------------- A-5-1
Saito, T.---------------------------------PS-14-15, M-5-3
Saito, W.----------------------------------- M-3-4, M-4-3
Saito, Y.------------------------------PS-9-12, PS-12-18
Saitoh, Y.--------------------------------------PS-14-17L
Sakai, H.------------------ PS-10-6, PS-10-10L, C-4-5
Sakai, M.---------------------------PS-8-10, PS-14-17L
Sakai, T.--------------------------------------------- E-1-5
Sakai, Y.------------------------------------ C-6-2, G-1-5
Sakakura, M.----------- PS-4-3, K-7-1, M-6-3, O-1-4
Sakamoto, K.------------------------------- J-6-4, M-4-2
Sakamoto, T.---------------------------------------- O-4-4
Sakashita, M.-------------------- PS-1-12, G-4-1, J-6-3
Sakata, T.------------------------- PS-11-5, F-7-3, F-7-6
Sakita, S.-------------------------------------------- D-6-3
Sakiyama, S.--------------------------------C-4-2, G-5-5
Sakoda, K.-------------------------------- PS-8-5, H-6-4
Sakuma, N.----------------------------------------- E-1-5
Sakuma, Y.----------------------------------------- PS-8-5
Sakurai, S.------------------------------------------ D-3-2
Salaun, A.------------------------------------------- N-5-3
Salvalaglio, M.------------------------------------- G-3-4Sambonsuge, S.------------------------------------ O-1-4
Sameshima, T.------------------------------C-7-6, N-6-2
Samson, M.-P.-------------------------------------- N-1-1
Samson, M.P.------------------- PS-2-13, K-4-3, N-2-2Samuel, M.----------------------------------------- PS-8-3
Samukawa, S.---------------PS-4-2, PS-12-16, A-1-4,
G-3-5, O-2-5Sana, A.K.--------------------------------------- PS-11-4
Sanada, H.---------------------------------- H-7-1, P-1-3
Sang, C.H.-------------------------------------- PS-11-11
Sano, J.------------------------------------------- PS-15-1
Sano, K.------------------------------------------ PS-8-17
Sappat, A.---------------------------------------- PS-13-7
Saraya, T.-------------------------------------------- K-5-1
Sasagawa, K.----------------------- F-2-3, F-2-4, F-7-2
Sasagwa, S.-----------------------------------------M-6-4
Sasaki, F.----------------------------------------- PS-15-2
Sasaki, K.------------------------------- PS-8-17, M-5-4
Sasaki, M.-------------------------------- PS-11-2, F-7-5
Sasaki, S.----------------------------------------- PS-13-6
Sasaki, T.----------------------------------- D-7-6, G-1-6
Sasaki, Y.-------------------------------------------- A-2-2
Sata, Y.---------------------------------------------- B-4-2
Satake, H.------------------------------------------- F-7-3
Sato, H.---------------------------------------------- O-4-1
Sato, K.------------------------------------------- PS-10-1
Sato, M.------------------------------- PS-2-15, PS-15-4
Sato, S.-------------------- PS-12-4, PS-14-19L, O-5-4Sato, T.-------- PS-6-18, PS-9-5, D-7-5, E-4-1, H-3-5
Satoh, S.---------------------------- C-7-2, C-7-4, N-4-3
Sawada, A.------------------------- PS-12-14, PS-12-15
Sawada, K.------------------------------------ PS-11-13L
Sawamoto, N.----------------------------------- PS-8-13
Schmid, H.------------------------------------------ D-4-1
Schmidt, H.----------------------------------------- H-3-6
Schmidt, O.G.-------------------------------------- H-3-6
Scholze, A.----------------------------------------- PS-3-4
Schonenberger, C.--------------------------------- H-7-6
Schroeder, T.------------------------------- G-3-4, G-5-1
Schubert, M.A.---------------------------- G-3-4, G-5-1
Schulze, J.------------------------------------------- E-7-4
Schwarz, U.T.-------------------------------------- A-1-1
Segard, B.D.-----------------------------------------F-2-1
Sei, R.-------------------------------------------- PS-8-23
Seignard, A.----------------------------------------- K-4-3

Sekiguchi, A.--------------------------------------- D-3-2
Sekiguchi, S.---------------------------------------- A-3-1
Sekiguchi, T.---------------------------------------- C-1-3
Sekine, C.---------------------------------------- PS-8-26
Sekine, K.------------------------------------------- N-3-3
Sekine, Y.--------------------------------------- PS-12-14
Sekitani, T.--------------------------------- G-7-4, G-7-5
Selberherr, S.-----------------------------------PS-4-12L
Sennichi, T.----------------------------------------- A-3-6
Senzaki, J.-------------------------------------------- J-1-1
Seo, K.S.-------------------- PS-1-4, PS-6-12, PS-6-16
Seo, M.W.--------------------------------------------F-2-2
Seto, J.----------------------------------------------- C-7-5
Setoguchi, R.--------------------------------------- E-7-3
Severi, S.-------------------------------------------- A-6-1
Shahiduzzaman, Md.-------------------PS-15-3, C-1-4
Shang, Y.-------------------------------------------- E-6-4
Shao, N.------------------------------------------ PS-8-15
Sharma, A.--------------------------------------- PS-12-9
Sharma, A.A.--------------------------------------- H-3-4
Sharma, P.---------------------------------------- PS-3-13
Sheehan, P.---------------------------------------- H-7-3LShen, H.H.--------------------------------------PS-1-19LShen, S.L.-------------------------------------- PS-1-19LShen, X.Q.------------------------------------------M-4-4
Shen, Y.J.----------------------------------------- PS-3-12
Sheu, J.T.---------------------------------------- PS-11-11
Shi, B.-------------------------------------------- PS-8-11
Shi, J.L.------------------------------------------ PS-5-12
Shi, P.------------------------------------- PS-9-1, PS-9-2
Shiba, S.-----------------------------------------PS-6-27L
Shibata, D.------------------------------------------M-3-3
Shibata, H.----------------------------------------- PS-7-7
Shibata, M.------------------------------------------ G-1-2
Shibata, T.------------------------------------------- O-4-2
Shibayama, S.----------------------------------- PS-1-12
Shibayama, T.---------------------------PS-8-19, G-3-7
Shidachi, R.----------------------------------------- G-7-5
Shields, A.J.---------------------------------------- H-6-1
Shigekawa, N.----------PS-14-5, PS-14-11, PS-14-12
Shigemi, A.-------------------------------------- PS-15-7
Shigetou, A.----------------------------------------- E-6-1
Shih, A.S.------------------------------------------ PS-1-6
Shih, H.A.--------------------------------- M-2-5, M-2-6
Shih, M.C.--------------------------------------- PS-7-13
Shih, M.H.------------------------------------------ A-1-3
Shih, T.C.------------------------------------------ PS-7-5
Shih, W.C.--------------------- PS-6-2, PS-6-3, PS-6-7
Shikata, S.------------------------------------- PS-14-19L
Shim, H.Y.------------------------------------------ O-6-3
Shimada, D.-------------------------------- K-7-1, O-1-4
Shimada, T.---------------------- PS-10-11L, PS-12-11
Shimanouchi, T.--------------------------------- PS-11-9
Shimizu, M.-----------------------------------------M-4-4
Shimizu, S.--------------------------------------- PS-14-5
Shimizu, T.-------------------------------- PS-8-6, O-2-2
Shimoda, T.------------------------------- PS-9-4, C-7-1
Shimokawa, F.----------------------------------- PS-5-11
Shimomura, A.-------------------K-7-1, M-6-3, M-6-4
Shimoyama, H.------------------------------------ PS-8-8
Shimura, K.----------------------------------------- N-4-3
Shimura, T.--------------------------------------- PS-14-6
Shimura, Y.----------------------------------------- G-4-4Shin, H.S.------------------------------------------ PS-4-8
Shin, J.-----------------------------------------PS-15-20L
Shin, S.---------------------------------------------PS-3-9
Shin, W.------------------------------------------ PS-8-18
Shingo, M.------------------------- PS-14-11, PS-14-12
Shinoda, N.----------------------------------------- N-3-3
Shinohara, H.----------------------------------------F-6-1
Shiojima, K.----------- PS-6-10, PS-14-11, PS-14-12,
G-1-4, M-7-2
Shiomi, H.--------------------------J-2-2, J-6-4, M-3-2
Shionoiri, Y.--------------------------------------- PS-4-3
Shiozaki, N.-----------------------------------------M-2-3
Shirahama, R.----------------------------------- PS-14-4
Shiraishi, K.------------------------------------- PS-1-17
Shiraishi, T.----------------------------------------- O-2-2
Shirata, K.------------------------------------------- F-7-4
Shiratori, T.---------------------------------------- PS-2-7
Shiwaku, R.-------------------------------------- PS-10-2
Shoji, S.--------------------------------------------- E-6-1
Shu, M.F.-------------------------------------------- E-6-3

Siddiqui, A.----------------------------------- PS-14-18L
Signamarcheix, T.---------------------------------- N-5-3
Simoen, E.------------------------------------------ G-4-4
Simoyama, T.--------------------------------------- A-4-3
Singh, S.--------------------------------------- PS-14-18L
Skibitzki, O.---------------------------------------- G-3-4
Sklenard, B.----------------------------------------- N-1-1
Skorupa, I.------------------------------------------ H-3-6
Skotnicki, T.-------------------- PS-2-13, K-4-2, N-2-2
Skowronski, M.------------------------------------ H-3-4
Smith, A.D.----------------------------------------- B-5-4
Soares, J.L.-------------------------------------- PS-8-22
Sogawa, T.---------------------------------- H-7-1, P-1-3
Sohgawa, M.---------------------------------------- F-3-3
Sokolov, N.S.-------------------------------------- PS-9-3
Sollier, S.-------------------------------------------- N-5-3
Sometani, M.-------------------------------- J-1-1, J-6-2
Someya, T.------------------------- C-4-4, G-7-4, G-7-5
Sone, M.----------------PS-2-1, PS-2-3, E-4-1, E-4-4LSong, B.---------------------------------------------M-7-1
Song, C.--------------------------------PS-2-10, A-2-6L
Song, J.M.------------------------------- PS-2-16, E-2-2
Sonntag, P.------------------------------------------ C-3-1
Sonoda, Y.---------------------------------------- PS-15-2
Sorimachi, J.------------------------------------PS-13-12
Spiesser, A.----------------------------------------- P-3-2
Sriprachuabwong, C.--------------------------- PS-13-7
Stahl, R.--------------------------------------------- A-6-1
Stakenborg, T.-------------------------------------F-3-5L
Stassen, A.------------------------------------------ A-6-1
Stolz, W.--------------------------------------------- A-7-4
Stopa, M.--------------------------------------- PS-4-13L
Struk, Y.M.------------------------------------------ C-6-3
Su, C.C.--------------------------------------------- N-5-4
Su, C.J.--------------------------------------------- PS-6-8
Su, K.C.--------------------------------------------- K-5-3
Su, P.--------------------- PS-1-19L, PS-3-10, PS-3-14,
PS-3-15, K-2-5L
Su, P.Y.------------------------------------------- PS-15-6
Su, T.H.---------------------------------------------- N-1-4
Su, V.C.----------------------------------PS-7-3, PS-7-19
Su, W.F.--------------------------------------------- C-1-2
Su, Y.K.------------------------------------------ PS-3-12
Su, Y.L.----------------------------------PS-11-10, E-4-2
Subagyo, A.------------------------------------- PS-12-19
Subramanian, A.----------------------------------- A-6-1
Suda, J.------------------------------------- K-6-2, M-2-4
Suda, K.-------------------------------- PS-4-5, PS-8-13
Sudoh, H.---------------------------------------- PS-8-13
Sudyoadsuk, T.---------------------------------- PS-10-8
Suedomi, Y.------------------------------------------F-1-1
Suemasu, T.-------------------------------- D-7-2, G-4-2
Suemune, I.----------------------------------------- H-6-4
Sueoka, K.-------------------------------------- PS-12-19
Suga, T.---------------------------PS-2-6, PS-2-7, E-2-3
Sugahara, T.----------------------------------------- E-2-1
Suganuma, K.-------------------------------------- E-2-1
Sugawa, S.-----------------------PS-3-2, PS-3-7, E-7-5
Sugawara, Y.-------------------------------PS-2-5, E-6-2
Sugaya, T.------------------------------------------- C-6-3
Sugie, R.---------------------------------------------J-1-2
Sugihara, A.-------------------------------------- PS-12-4
Sugime, H.------------------------------------------ E-1-6
Sugimota, Y.------------------------------------ PS-13-19
Sugimoto, Y.-------------------PS-7-7, PS-8-20, N-1-2
Sugiyama, H.---------------------- PS-12-14, PS-12-18
Sugiyama, M.--------------------------------------- A-1-4
Sugiyama, T.------------------------------------- PS-12-7
Suhara, T.------------------------------------------- A-7-7
Sul, W.S.----------------------------------------PS-2-18L
Sumi, H.--------------------------------------------- E-1-2
Sumina, R.------------------------------------------- J-2-1
Sun, C.C.----------------------------------------- PS-8-15
Sun, H.T.----------------------------------------- PS-4-10
Sun, J.---------------------------------------------- PS-3-8
Sun, L.-------------------------------------------- PS-3-17
Sun, W.C.---------------------------------------- PS-7-22
Sun, W.K.------------------------------------------PS-4-8
Sun, X.--------------------------------------------- PS-2-8
Sunaga, Y.--------------------------------------------F-2-3
Sutar, S.----------------------------------------- PS-13-13
Suto, T.------------------------------------------PS-14-14
Suturin, S.M.-------------------------------------- PS-9-3- 55 -

Suu, K----------------------------------------------- E-7-1
Suwa, T.-----------------------------------PS-3-2, M-3-4
Suwa, Y.------------------------------------------ PS-13-8
Suzuka, M.------------------------------------------ C-1-3
Suzuki, A.-------------- PS-1-12, G-4-1, K-6-3, K-7-4
Suzuki, H.---------------------------------------- PS-8-17
Suzuki, J.----------------------------------------- PS-7-10
Suzuki, K.------- PS-2-4, PS-2-17, PS-12-4, PS-13-6,
PS-13-8, D-3-1
Suzuki, S.-------------- PS-8-10, B-5-2, E-4-3, M-1-4
Suzuki, T.--------------------------------- M-2-5, M-2-6
Suzuki, Y.----------- PS-12-8, PS-15-4, F-1-3, H-6-2,
K-6-3, N-6-2, O-1-3
Sverdlov, V.-------------------------------------PS-4-12L
Swagten, H.J.M.------------------------------------P-1-2
Syu, J.M.---------------------------------------- PS-15-12

T

Tabone, C.------------------------------------------ N-2-3
Tada, M.--------------------------------------------- O-4-4
Tada, T.--------- PS-9-12, PS-13-22, PS-15-10, D-4-4
Tadaki, Y.------------------------------------------- E-4-3
Tagawa, M.------------------------------------- PS-14-16
Taguchi, D.----------------------------------------- C-4-3
Tahara, K.-------------------------------------------- J-2-3
Taima, T.--------------------------------- PS-15-3, C-1-4
Tajiri, T.--------------------------------------------- A-1-5
Tajitsu, Y.------------------------------------------- C-4-1
Taka, H.------------------------------------------ PS-12-4
Takada, T.------------------------------------------ PS-9-5
Takado, S.--------------------------------- M-4-2, M-7-3
Takagi, S.--------PS-7-6, A-3-4, A-7-2, A-7-5, N-5-2
Takagishi, H.--------------------------------------- C-7-1
Takahashi, A.--------------------------------------- O-3-2
Takahashi, K.------------- PS-11-13L, PS-15-3, C-1-4
Takahashi, M.------------------------------A-3-2, E-1-5
Takahashi, N.----------------------------------- PS-12-11
Takahashi, S.-------------------------------A-1-5, A-3-2
Takahashi, T.--------------------------- PS-6-27L, F-2-1
Takahashi, Y.---------------------- E-2-3, H-3-2, O-3-2
Takahasi, M.------------------------------- D-7-6, G-1-6
Takahasi, S.-------------------------------------- PS-12-2
Takakura, K.------------------------------- G-5-4, G-5-5
Takamatsu, S.--------------------------------------- E-2-4
Takamoto, T.---------------------------------------- C-6-1
Takamura, Y.-------------------------------PS-9-4, F-3-2
Takanashi, K.------------------------PS-12-7, PS-12-13
Takanashi, Y.------------------------------------ PS-6-18
Takano, Y.------------------------------------------- G-1-2
Takao, H.----------------------------------------- PS-5-11
Takashima, K.--------------------------------PS-13-23L
Takashima, S.------------------------------A-7-5, M-2-4
Takasu, S.-------------------------------------------- J-6-2
Takasu, T.---------------------------------------- PS-6-23
Takasuna, S.-----------------------------------------P-1-5
Takayama, J.--------------- PS-8-12, PS-12-19, A-1-4,
G-3-1, P-3-3
Takayasu, M.----------------------------- E-4-4L, E-7-2
Takazawa, N.--------------------------------------- E-4-3
Takeda, K.------------------------------------------ A-4-2
Takeda, Y.---------------------------------------- PS-10-2
Takehara, H.------------------------ F-2-3, F-2-4, F-7-2
Takei, K.-------------------------------------------PS-3-8
Takei, M.------------------------------------- J-1-1, J-6-2
Takemoto, R.--------------------------------------- H-6-4
Takemoto, Y.---------------------------------------- E-4-3
Takenaka, M.-------------------- PS-7-6, A-3-4, A-7-2,
A-7-5, N-5-2
Takeshima, H.----------------------------------- PS-8-10
Takeshima, S.------------------------------------ PS-1-15
Takeshita, T.------------------------------------ PS-14-13
Takeuchi, A.---------------------------------------- C-3-3
Takeuchi, D.----------------------------------------- J-2-3
Takeuchi, K.-------------- K-5-1, O-6-1, O-7-3, O-7-4
Takeuchi, T.--------------------------------M-6-3, O-1-4
Takeuchi, W.------------------ PS-1-9, PS-1-12, G-4-1,
G-4-4, J-6-3
Takeuchi, Y.---------------------------- PS-14-16, E-7-5
Takeyama, M.B.--------------------------------- PS-2-15
Takigawa, S.---------------------------------------- A-1-2
Takiguchi, M.--------------------------------------- D-6-2
Tamaru, S.------------------------------------------ P-3-6
Tamaso, H.---------------------------------- J-2-2, M-3-2
Tamukoh, H.---------------------------------------- F-1-1

Tamura, E.--------------------------------------- PS-12-8
Tamura, H.------------------------------------------ O-1-3
Tamura, M.----------------------------------------- E-6-1
Tamura, S.------------------------------------------M-3-3
Tan, C.S.-------------------------------------------- E-6-4
Tanabe, K.-------------------------PS-15-15, PS-15-16
Tanaka, A.------------------------------------------- G-1-3
Tanaka, F.------------------------------------------- D-3-2
Tanaka, H.------------------------------------------ K-6-2
Tanaka, K.------------------------------------------M-3-3
Tanaka, M.---------------------- PS-15-4, O-7-4, P-3-4
Tanaka, S.--------------------------PS-1-11, PS-14-17L
Tanaka, T.-------------PS-2-5, PS-2-12, A-1-2, D-2-5,
E-6-2, F-2-5, K-7-1, M-4-2,
M-6-3, M-7-3
Tanaka, Y.----------------- PS-5-6, PS-8-16, PS-10-9L,
A-4-3, J-1-1
Tanamoto, T.---------------------------------------- H-7-2
Tang, S.H.---------------------------------------- PS-15-8
Tani, T.-----------------------------------------------F-2-5
Taniguchi, K.------------------------------------ PS-2-12
Taniguchi, M.--------------------------------------- F-5-1
Taniguchi, T.--------------------------------D-3-4, F-5-4
Tanikawa, S.------------------------------ PS-2-5, E-6-2
Tanikawa, T.---------------------------------------- G-1-4
Tanimoto, Y.---------------------------- PS-10-1, M-4-3
Taniwaki, S.---------------------------------------- C-7-2
Taoka, N.-------------------------------------------- G-5-1
Tapajna, M.---------------------------------------- M-2-1
Tashiro, T.Y.------------------------------------ PS-12-13
Tatebayashi, J.-------------------------------------- A-1-5
Tateno, K.------------------------------------------- D-6-2
Tatsumura, K.---------------------------------------F-6-2
Tatsuoka, H.------------------------------------- PS-8-17
Tawara, T.------------------------------------------- H-7-1
Tchoe, Y.-------------------------------------------- D-7-3
Terabe, K.------------------------------------------- B-4-3
Teraji, T.--------------------------------------------- G-1-1
Teramoto, A.----------------------------- PS-3-2, PS-3-7
Teranishi, M.--------------------------------------PS-2-3
Terao, J.--------------------------------------------- E-1-1
Terao, K.----------------------------------------- PS-5-11
Terasaki, I.--------------------------------------- PS-8-18
Terasawa, M.----------------------------------------F-7-5
Tezuka, N.-------------------------------------- PS-12-18
Tezuka, T.---------------------------------- N-1-3, N-3-1
Than, P.H.---------------------------------------PS-15-17
Thangthong, A.---------------------------------- PS-10-8
Thean, A.---------------------------------------- PS-13-13
Thieu, Q.T.------------------------------------------M-5-4
Thomas, C.------------------------------------------ A-1-4
Thong, J.T.L.-------------------------- PS-13-16, D-2-3
Tian, Y.C.---------------------------------------- PS-11-6
Tien, B.Z.---------------------------------- K-3-2, O-6-4
Tillack, B.------------------------------------------- E-7-4
Tiwari, V.A.----------------------------------------PS-3-4
Tiwari, Y.------------------------------------------- PS-3-5
Tixier Mita, A.-------------------------------------- F-2-1
Todoroki, S.----------------------------------------- C-7-3
Togashi, R.------------------------------------------M-5-4
Tok, E.S.--------------------- PS-8-3, PS-13-14, G-5-2
Tokito, S.---------------------------------PS-10-2, G-7-2Toko, K.------------------------------------ D-7-2, G-4-2
Tokuda, H.----------------------------------------M-2-2L
Tokuda, T.--------------------------- F-2-3, F-2-4, F-7-2
Tokushima, M.---------------------------------- PS-7-14
Tominaga, J.------------------------------------- PS-9-12
Tomioka, K.--------------------------- PS-13-18, K-2-4
Tomita, H.---------------------------------------- PS-12-8
Tomita, T.------------------------------------------- O-6-2
Tong, Y.-------------------------------- PS-13-16, D-2-2
Tonotani, J.----------------------------------------- N-3-3
Tonouchi, M.-------------------------------C-6-2, G-1-5
Toriumi, A.-------------- PS-1-10, PS-1-14, PS-1-20L,
D-3-6L, H-3-3, K-1-3, N-3-2,
N-3-4, N-4-1, N-4-4Tosa, M.--------------------------------------------- C-6-3
Toshiyoshi, H.---------- PS-2-3, E-4-4L, E-7-2, F-2-1
Towie, E.------------------------------------------- PS-3-1
Tran, N.A.--------------------------------------- PS-11-11
Tsai, C.C.-------------------- PS-14-2, PS-15-13, C-3-2
Tsai, D.P.----------------------------------------- PS-15-8
Tsai, H.H.---------------------------------------- PS-5-12

Tsai, J.J.-------------------------------------------- PS-3-3
Tsai, J.R.----------------------------------------- PS-6-22
Tsai, K.H.---------------------------------------- PS-9-10
Tsai, M.J.----------------------------------------- PS-9-10
Tsai, T.H.----------------------------------------- PS-7-16
Tsai, W.L.---------------------------------------- PS-11-7
Tsai, Y.C.------------------------------- PS-12-16, G-3-5
Tseng, C.Y.------------------------------------------M-7-6
Tseng, Y.H.------------------------------------------ E-6-3
Tsipas, P.---------------------------------------- PS-13-13
Tsubaki, K.----------------------------------------- PS-5-8
Tsubuku, M.--------------------- K-5-2, K-7-1, M-6-2,
M-6-3, M-6-4, O-1-4
Tsuchiya, T.------------------------------ PS-12-7, B-4-3
Tsuchizawa, T.-------------------------------------- A-4-2
Tsui, B.Y.------------------------------------------- PS-9-7
Tsuji, Y.---------------------------------------------- O-4-4
Tsujimura, M.--------------------------------------- J-6-4
Tsujioka, Y.-------------------------------------- PS-8-18
Tsukagoshi, K.------------------------------------- D-2-1
Tsukamoto, T.-------------------------------------- H-3-5
Tsukimura, M.-------------------------------------- E-4-3
Tsukuda, M.-------------------------------------- F-3-5L
Tsunoda, I.--------------------------------- G-5-4, G-5-5
Tsurumaki Fukuchi, A.---------------------------- O-3-2
Tsurumi, N.-----------------------------------------M-2-3
Tsuruoka, T.------------------------------- PS-4-7, B-4-3
Tsuruta, A.--------------------------------------- PS-8-18
Tsuruta, K.------------------------------------------ D-2-5
Tsutsui, K.--------------------------------------- PS-6-23
Tsutsui, N.------------------------------------------ O-1-3
Tsutsumi, T.-------------------------------------- PS-6-11
Tu, N.T.--------------------------------------------- P-3-4
Tu, W.H.--------------------------------------------- C-3-2
Tu, Y.C.-----------------------PS-7-20, PS-7-21, M-6-1
Tu, Z.------------------------------------------------ A-3-3
Tuantranont, A.---------------------------------- PS-13-7
Tulapurkar, A.------------------------ PS-12-8, PS-12-9
Turkevych, I.--------------------------------------- C-6-3
Tyaginov, S.------------------------------------- PS-3-13
Tzeng, B.J.------------------------------------------ G-7-3
Tzou, A.J.------------------------------------------PS-6-8

UUang, K.M.--------------------------- PS-7-20, PS-7-21
Uchida, H.------------------------------------------ O-2-2
Uchida, K.-------------------------------------- PS-15-17
Uchida, R.------------------------------------------- C-1-3
Uchida, T.--------------------------- E-1-4, H-3-2, J-1-2
Uchihara, T.-----------------------------------------M-3-4
Uchiyama, N.--------------------------------------- C-7-7
Udagawa, Y.------------------------------------- PS-15-1
Udono, H.-------------------------------PS-7-24, PS-8-2
Ueda, H.--------------------------------------------- N-1-2
Ueda, K.-----------------------------------------PS-12-12
Ueda, T.---------------- PS-1-8, M-2-3, M-3-3, M-4-4
Uehara, T.---------------------------------------PS-8-28L
Uemura, J.------------------------------------------ C-6-3
Uemura, S.---------------------------- PS-10-3, PS-10-6
Uemura, T.--------------------------- PS-7-14, PS-12-5,
PS-12-6, PS-12-17
Ueno, K.------------------- C-7-7, E-1-4, E-1-5, M-2-4
Uesugi, W.------------------------------------------ O-1-3
Ui, T.--------------------------------------- M-2-5, M-2-6
Ujihara, T.--------------------------------------- PS-14-16
Ujita, S.----------------------------------------------M-3-3
Umegaki, T.----------------------------------------- C-6-2
Umehara, N.---------------------------------------PS-8-6
Umezawa, H.------------------------PS-14-19L, M-5-2
Umezawa, T.------------------------------- A-3-5, G-3-3
Upadhyaya, V.-------------------------------------- D-2-5
Urasaki, S.--------------------------------------PS-13-17
Urayama, W.---------------------------------------- N-6-2
Ushida, J.----------------------------------------- PS-7-14
Ushijima, H..------------------------------------ PS-10-3
Usuda, K.---------------------------------- N-1-3, N-3-1
Utegulov, Z.------------------------------------ PS-15-10
Uwanno, T.------------------------------------------ D-3-4

V

Vakarin, V.------------------------------------------ A-4-1
Van Dorpe, P.--------------------------------------- A-6-1
Van Roy, W.----------------------------------------- A-6-1
Vandervorst, W.------------------------------------ G-4-4- 56 -

Vaziri, S.-------------------------------------------- B-5-4
Ventzek, P.L.G.------------------------------------- N-1-2
Vercruysse, D.-------------------------------------- A-6-1
Vexler, M.I.---------------------------------------- PS-9-3
Veytizou, C.----------------------------------------- N-5-3
Vianello, E.----------------------------------------- O-1-1
Vichi, F.M.--------------------------------------- PS-8-22
Vinet, M.---------------PS-2-13, K-4-2, K-4-3, N-1-1,
N-2-2, N-2-3
Viviani, D.------------------------------------------ O-7-3
Vivien, L.------------------------------------------- A-4-1
Volkov, A.--------------------------------------- PS-15-10
Vollebregt, S.--------------------------------------- E-1-6
Volz, K.---------------------------------------------- A-7-4
Vos, R.----------------------------------------------- A-6-1
Voskoboynikov, O.---------------------------- PS-12-16

W

Wada, K.------------------------------PS-14-17L, A-4-2
Wada, T.------------------------- PS-15-7, C-3-4, D-4-3
Wakabayashi, H.-------------------------------- PS-8-13
Wakamizu, T.-------------------------------------- PS-3-8
Wallraff, A.----------------------------------------- H-7-6
Waltl, M.-------------------------------------------- B-5-4
Wan, Y.---------------------------------------------- A-7-3
Wang, B.------------------------------------------- PS-8-1
Wang, C.-------------------------------------------- A-6-2
Wang, C.C.--------------------------------------- PS-9-11
Wang, C.K.----------------------------------------PS-7-2
Wang, D.--------------------------------- PS-1-11, A-4-4
Wang, H.---------------------------------- PS-6-4, K-1-5
Wang, H.J.--------------------------------------- PS-6-21
Wang, H.Y.--------------------------------------- PS-6-14
Wang, I.T.------------------------------------------- O-7-2
Wang, J.-------------------PS-7-22, PS-8-15, PS-8-21,
D-4-2, K-1-1
Wang, J.C.------------------------- PS-11-1, PS-11-12L
Wang, K.L.---------------------------------------- PL-2-2
Wang, L.------------------------------------------- PS-9-6
Wang, P.Y.------------------------------PS-2-14, PS-9-7
Wang, R.L.--------------------------------------- PS-5-12
Wang, S.------------------------------------------ PS-14-6
Wang, S.J.--------------- PS-7-20, PS-7-21, PS-13-14,
D-2-2, M-6-1
Wang, T.M.---------------------------------------- PS-8-4
Wang, W.-------------------------------------------- G-5-2
Wang, W.C.-------------------------------------- PS-4-11
Wang, X.---------------------------------- PS-3-1, A-3-3
Wang, X.Y.------------------------------------------ D-7-4
Wang, Y.----------------PS-3-1, PS-9-1, PS-9-2, K-1-1
Wang, Y.C.--------------------------------------- PS-7-18
Wang, Y.J.------------------------------------------- K-7-2
Wang, Y.W.-------------------------------------- PS-3-15
Wang, Y.Y.---------------------------------------- A-2-6L
Wang, Z.----------------------------------------- PS-8-21
Wang, Z.G.------------------------------------------ D-7-4
Watanabe, A.--------------------------------------PS-5-9
Watanabe, E.--------------------------------------- PS-7-7
Watanabe, H.------------------------------------ PS-14-6
Watanabe, I.---------------------- PS-6-26L, PS-6-27L
Watanabe, K.--------------------------------------- D-3-4
Watanabe, M.-------------------------------------- PS-4-5
Watanabe, S.---------------- PS-8-19, PS-14-16, G-3-7
Watanabe, T.--------------------- PS-3-8, K-3-1, N-4-3
Watariguchi, S.---------------------------------- PS-2-12
Wegele, T.------------------------------------------- A-7-4
Wei, K.C.-------------------------------------- PS-11-12L
Wei, P.K.---------------------------------------------F-7-1
Weldon, J.A.---------------------------------------- H-3-4
Widiez, J.-------------------------------------------- N-5-3
Wiederkehr, R.S.----------------------------------F-3-5L
Wiesmann, C.--------------------------------------- A-1-1
Windbacher, T.---------------------------------PS-4-12L
Wong, K.T.--------------------------------------- PS-10-5
Woo, J.--------------------------------------------- PS-8-9
Woo, J.C.S.--------------------------------------- K-2-5L
Wu, C.----------------------------------------------- K-1-1
Wu, C.H.-------------------- PS-6-2, PS-6-3, PS-7-20,
PS-7-21, M-6-1
Wu, C.Y.--------------------------------PS-3-12, PS-5-3
Wu, H.------------------------------------PS-2-10, K-2-1
Wu, J.K.------------------------------------------- H-7-5LWu, J.Y.--------------------------------------------- O-3-5
Wu, K.H.----------------------------------------- PS-15-8

Wu, K.W.-------------------------------------------- K-7-4
Wu, M.H.------------------------------------------ PS-3-6
Wu, N.--------------------------------------PS-5-4, F-1-2
Wu, S.L.------------------------------------------ PS-3-12
Wu, W.D.----------------------------------------- PS-5-12
Wu, W.H.----------------------PS-1-1, PS-7-3, PS-7-19
Wu, W.W.-------------------------------PS-4-6, PS-13-1
Wu, Y.----------------------------------------------- N-6-1
Wu, Y.C.-------------------------------- PS-3-6, PS-4-11
Wu, Y.H.-------------------------------------------- N-5-4

X

Xenogiannopoulou, E.------------------------ PS-13-13
Xia, J.------------------------------------------------ A-1-6
Xiao, L.-------------------------------- PS-8-15, PS-8-21
Xie, M.J.------------------------------------------- PS-1-5
Xie, Y.H.-------------------------------------------- G-3-4
Xie., W.---------------------------------------- PS-10-11L
Xing, H.G.----------------------------------------- M-7-1
Xu, D.----------------------------------PS-14-15, M-5-3
Xu, H.--------------------------------- PS-3-17, PS-14-6
Xu, H.Q.----------------------------------- D-4-2, D-7-4
Xu, J.--------------------------------------------- PS-8-15
Xu, T.----------------------------------------------- PS-3-8
Xue, Q.-K.------------------------------------------ P-1-1
Xun, D.L.---------------------------------------- PS-4-10

Y

Yabuki, N.------------------------------------------- B-4-2
Yabushita, A.------------------------------------ PS-15-8
Yagishita, Y.------------------------------------- PS-13-8
Yaita, J.------------------------------------------ PS-14-14
Yajima, T.----------------------- PS-1-14, H-3-3, N-3-4
Yajimia, T.------------------------------------------ N-3-2
Yakubo, Y.------------------------------------------M-6-4
Yakushiji, K.-----------------------------------------P-3-6
Yamada, H.----------------------------------------- A-7-1
Yamada, K.----------------------------------------- A-4-2
Yamada, R.--------------------------------------- PS-14-8
Yamada, S.--------------------------------------- PS-15-9
Yamada, T.-------------------- PS-14-15, D-3-2, M-5-3
Yamada, Y.--------------------------------------- PS-8-25
Yamade, N.----------------------- PS-4-3, F-1-3, O-4-3
Yamaguchi, D.-------------------------------------- C-4-5
Yamaguchi, J.--------------------------------------- K-7-3
Yamaguchi, M.------------------------------------- C-6-1
Yamaguchi, S.----------- PS-8-13, PS-15-18L, M-2-6
Yamaguchi, T.------------------------------F-2-3, G-1-2
Yamaha, T.------------------------------------------ G-4-1
Yamahata, G.--------------------------------------- H-3-1
Yamakawa, K.-------------------------------- PS-10-11L
Yamakoshi, S.--------------------------------------M-5-4
Yamamoto, C.-------------------------------------- C-7-7
Yamamoto, H.------------------------------------- PS-8-7
Yamamoto, K.--------------- PS-1-11, PS-15-3, A-4-4,
C-1-4, J-6-3
Yamamoto, M.---------------B-4-1, PS-12-5, PS-12-6,
PS-12-17
Yamamoto, N.--------------------- A-3-5, A-7-1, G-3-3
Yamamoto, S.------------------------------------ PS-6-10
Yamamoto, T.------------------------ PS-13-23L, H-6-3
Yamamoto, Y.------------PS-4-3, E-7-4, F-6-1, K-7-1,
M-6-3, M-6-4, O-1-3, O-1-4
Yamamura, T.-------------------------- PS-12-19, G-3-1
Yamana, K.---------------------------------------- PS-9-5
Yamanaka, A.--------------------------------------- B-5-3
Yamanaka, K.--------------------------------------- A-1-2
Yamanaka, M.-------------------------------------- K-6-3
Yamane, D.----------- PS-2-1, PS-2-3, E-4-4L, E-7-2
Yamaoka, Y.--------------------------------------- PS-7-9
Yamasaki, K.---------------------------------------- J-6-4
Yamasaki, S.---------------------- PS-5-1, J-2-3, M-5-1
Yamashige, T.---------------------------------- PS-12-14
Yamashita, K.---------------------------- PS-11-9, F-3-3
Yamashita, T.--------------------------------------- E-2-4
Yamashita, Y.-----------------------------PS-14-1, J-1-5
Yamauchi, A.-------------------------------------- PS-2-6
Yamazaki, D.---------------PS-8-12, PS-12-19, G-3-1
Yamazaki, S.---------- PS-4-3, PS-6-23, F-1-3, K-5-2,
K-7-1, M-6-2, M-6-3, M-6-4,
O-1-3, O-1-4, O-4-3
Yamazaki, T.---------------------------------------- C-7-7
Yamazaki, Y.-------------------------------- E-1-5, F-6-4
Yan, B.C.---------------------------------------- PS-15-12
Yan, R.-----------------------------------------------M-7-1

Yanagida, S.---------------------------------------- E-4-1
Yanagida, T.------------------------------------PS-13-21
Yanagizawa, E.------------------------------------- O-7-3
Yanase, T.------------------------ PS-10-11L, PS-12-11
Yanase, Y.---------------------------------------- PS-11-5
Yang, C.H.----------------------------------------- PS-9-7
Yang, C.M.---------------------------- PS-11-1, PS-11-3
Yang, C.T.---------------------------------------- PS-7-11
Yang, H.Y.--------------------------------------- PS-11-5
Yang, J.-------------------------------------- E-1-6, F-1-2
Yang, K.C.---------------------- PS-1-1, PS-9-8, M-1-2
Yang, L.W.-------------------------------------- PS-12-16
Yang, M.----------------------------------------- PS-13-6
Yang, Q.------------------------------------------ PS-14-6
Yang, R.--------------------------------------------- D-2-2
Yang, S.------------------------------------------ PS-2-10
Yang, S.C.------------------------------------------ PS-5-7
Yang, S.D.--------------------------------------- PS-6-24
Yang, T.----------------------------------- PS-7-8, D-7-4
Yang, X.--------------------------------------------- F-1-4
Yang, X.G.------------------------------------------ D-7-4
Yang, X.J.---------------------------------------- PS-5-12
Yao, J.N.--------------------------------- PS-1-1, M-1-2
Yasuda, N.----------------------------------------- PS-8-5
Yasuda, S.--------------------------------------------F-6-2
Yasuda, T.------------------------------------------ PS-7-7
Yasutomi, K.-----------------------------------------F-2-2
Yatabe, Z.------------------------------------------- D-7-5
Yatsu, S.----------------------------------PS-8-19, G-3-7
Ye, G.----------------------------------------------- PS-6-4
Ye, P.D.---------------------------------------------- K-2-1
Yeh, B.L.----------------------------------------- PS-6-20
Yeh, M.S.------------------------------------------ PS-3-6
Yen, S.S.----------------------------------------- PS-14-2
Yeo, Y.C.---------------------------------- PS-8-3, G-5-2
Yeo, Y.K.------------------------------------------- PS-8-1
Yew, K.S.------------------------------------------- O-1-2
Yi, G.-C.-------------------------------------------- D-7-3
Yokomori, T.------------------------------------- PS-8-24
Yokota, T.--------------------------C-4-4, G-7-4, G-7-5
Yokouchi, T.---------------------------------------- O-2-2
Yokoyam, S.---------------------------------------- A-3-6
Yokoyama, S.----------------- PS-9-5, PS-11-4, A-2-3,
F-5-4, F-5-4
Yonai, Y.---------------------------------------------M-1-1
Yoneda, H.--------------------------------------- PS-7-23
Yonezawa, Y.---------------------------------------- J-6-2
Yong, H.----------------------------------------- PS-13-21
Yoo, W.---------------------------------------------- E-6-4
Yoo, W.S.------------------------------------------PS-1-8
Yoon, Y.-----------------------------------------PS-13-10
Yoshiba, M.----------------------------------------PS-2-1
Yoshida, H.---------------------------------C-7-2, C-7-4
Yoshida, M.-------------- PS-10-3, PS-10-6, PS-10-9L
Yoshida, S.------------------------------- A-1-2, M-2-2L
Yoshida, W.-----------------------------------------M-1-3
Yoshida, Y.--------------------------------------- PS-8-18
Yoshimoto, M.------------------------------------- PS-1-8
Yoshimura, T.-------------------------PS-4-1, PS-8-28L
Yoshimura, Y.------------------------------------ PS-10-2
Yoshioka, M.------------------------------------ PS-8-24
Yoshizumi, K.---------------------------------------P-1-5
You, C.Y.---------------------------------------------P-1-2
You, T.----------------------------------------------- H-3-6
You, Y.H.------------------------------- PS-7-3, PS-7-19
Young, I.-------------------------------------------- O-5-1
Yu, C.H.----------------------------- PS-1-19L, PS-3-10
Yu, H.------------------------------------------------ E-6-4
Yu, H.W.-------------------------------------------PS-8-4
Yu, J.------------------------------------------------- A-1-6
Yu, K.C.------------------------------------------ PS-3-10
Yu, P.------------------------------------------------- A-1-4
Yu, T.-------------------------------------------------P-3-5
Yu, W.------------------------------------ PS-9-1, PS-9-2
Yu, X.------------------------------------------------ O-2-3
Yuasa, S.------------ PS-12-8, PS-12-10, P-3-2, P-3-6
Yudai, F.--------------------------------------------- E-1-2
Yun, H.J.----------------------------------------- PS-6-24

Z

Zaima, S.------ PS-1-9, PS-1-12, G-4-1, G-4-4, J-6-3
Zaitsu, K.---------------------------------------------F-6-2
Zalar, P.---------------------------------------------- C-4-4
Zan, H.W.-------------------------------- PS-10-5, F-5-2- 57 -

Zaumseil, P.-------------------------------- G-3-4, G-5-1
Zayets, V.----------------------------------------PS-12-10
Zeng, C.--------------------------------------------- A-1-6
Zeng, J.Y.---------------------------------------- PS-7-18
Zenitani, H.-------------------------------------- PS-10-1
Zhan, K.----------------------------------------- PS-13-11
Zhang, C.-------------------------------------------- K-1-5
Zhang, C.C.----------------------------------------- O-7-2
Zhang, G.------------------------------------------- D-6-2
Zhang, H.Z.----------------------------------------- O-1-2
Zhang, K.------------------------------------------- K-7-3
Zhang, K.K.------------------------------------- PS-4-10
Zhang, L.--------------------------PS-8-5, E-6-4, K-3-3
Zhang, S.D.------------------------------ PS-9-1, PS-9-2
Zhang, W.-------------------------------- PS-2-10, E-7-4
Zhang, W.P.---------------------------------------- PS-4-4
Zhang, X.----------- PS-3-8, PS-5-2, PS-9-1, PS-9-2,
PS-12-4, K-7-2
Zhang, X.M.--------------------------------------- PS-9-2
Zhang, Y.-------------------------PS-9-1, PS-9-2, A-1-6
Zhang, Y.B.-------------------------------------- PS-3-17
Zhang, Y.H.---------------------------------------- PS-7-4
Zhang, Z.---------- PS-5-4, PS-11-9, PS-13-14, F-3-3Zhao, J.---------------------------------------------- D-4-2
Zhao, M.----------------------------------------- PS-14-6
Zhao, Y.B.------------------------------------------- K-1-2
Zhao, Y.D.------------------------------------------ O-3-1
Zheng, G.P.------------------------------------- PS-13-11
Zheng, L.------------------------------------------- PS-9-6
Zhong, C.W.------------------------------------- PS-6-22
Zhong, G.------------------------------------------- E-1-6
Zhong, L.------------------------------------------- PS-4-9
Zhou, Q.------------------------------------ D-2-2, G-5-2
Zhou, S.M.---------------------------------------- A-2-6L
Zhou, X.L.------------------------------- PS-9-1, PS-9-2
Zhou, Y.----------------------------------PS-15-2, O-1-2
Zhou, Z.-------------------------PS-7-15, A-3-3, M-1-3
Zhu, C.------------------------------------------PS-13-16
Zhu, H.---------------------------------------------- K-1-1
Zhu, H.Z.---------------------------------------------F-1-4
Zhu, L.P.---------------------------------------- PS-12-20
Zhuge, F.---------------------------------------- PS-13-21
Zimprich, M.--------------------------------------- A-7-4
Zous, N.K.------------------------------------------ K-7-4

SSDM2015 Floor Guide, Sapporo Convention Center

Main Hall
A B

Main HallC

Opening Ceremony
Plenary Session

Lunch Buffet(Mon. 28. Sep AM)

Poster Session(

Mon. 28. Sep
Tue. 29. Sep
Wed. 30. Sep

1F)(Tue. 29. Sep)

Entrance▼
Cloak Room(Mon. 28. Sep
Tue. 29. Sep
Wed. 30. Sep)

Secretariat
Cloak

Main Entrance▼

Entrance Hall
Registration Desk
27. Sep( Sun.
Mon. 28. Sep )Welcome Court

102

107-A
107-B

101
Mid-Sized
Hall A
Conference Hall

Discussion
Area

Lunch Buffet

108-B

Short Course A Short Course B
Rump Session A Rump Session B

CoffeeBreak

28. Sep( Mon.
Tue. 29. Sep )108-A

Mid-Sized
Hall B

Restaurant
SORA

Welcome Party

Exhibition Area

27. Sep( Sun.
18:30-20:00 )CoffeeBreakRegistration Desk
29. Sep(Tue.
Wed. 30. Sep)

2F

Briefing Briefing
Room 1 Room 2

Briefing Briefing Meeting Meeting
Room 3 Room 4 Room 1 Room 2

Small Hall

204
Preview
Room

203

206

202
207
201