Monday, September 28
Opening & Plenary Sessions (Main Hall A, B)
Opening Session
Chair: S. Hara, Hokkaido Univ.
9:00
Welcome Address
T. Fukui, Hokkaido Univ.
9:05
Welcome Address
K. Masu, JSAP
SSDM Award
SSDM Paper Award Ceremony
Non-Technical Plenary Session
Chair: S. Hara, Hokkaido Univ.
9:30 PL-1-1
Building a Sustainable Society through Innovative Devices and Materials
R. Chubachi, AIST, Japan
10:15 BreakTechnical Plenary Session
Chair: S. Fujita, Kyoto Univ.
10:30 PL-2-1
Beyond blue LED
H. Amano, Nagoya Univ., Japan
11:15 PL-2-2
Low Power Electronics beyond 5nm
K. L. Wang, UCLA, USA
Lunch
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-1: Light Sources andRelated Technologies(14:00-15:45)
Chairs: K. Kojima(Tohoku Univ.)
T. Isu(Tokushima Univ.)

C-1: Organic andPerovskite Photovoltaics(14:00-15:45)
Chairs: K. Tajima (RIKEN)
T. Taima(Kanazawa Univ.)

E-1: Carbon Interconnects
Chairs: S. Ogawa (AIST)
M. Sato(Fujitsu Labs.)

F-1: Advanced Vision &G-1: Wide-gap Materials
Imaging Circuits(14:00-15:45)(14:00-15:30)
Chairs: T. Nagata (NIMS)
Chairs: T. Minotani
T. Iwai(NTT TELECON)(Fujitsu Labs.)
H. Lin(Nat. Chung-Hsing
Univ.)

14:00 A-1-1 (Invited)
Photonic Structures in
LEDs and Solar Cells
U.T. Schwarz1, O. Höhn2,
B. Bläsi2, C. Wiesmann3
and N. Linder4, 1Univ. of
Freiburg, 2 Fraunhofer ISE,
3
Osram OS and 4Osram
GmbH (Germany)

14:00 C-1-1 (Invited)
Bandgap Science for
Organic Solar Cells
M. Hiramoto1, 2,
1Institute for Molecular
Science and 2JST-CREST(Japan)

14:00 E-1-1 (Invited)
Functionalized Insulated
Molecular Wires for
Molecular Electronics
J. Terao, Kyoto Univ.
(Japan)

14:00 F-1-1 (Invited)
VLSI Pulse-Coupled
Phase Oscillator
Networks and Their
Emulator toward Spikebased Computation forIntelligent Processing
H. Tamukoh, Y. Suedomi,
K. Matsuzaka and T.
Morie, Kyushu Inst. of
Tech. (Japan)- 12 -

14:00 G-1-1 (Invited)
Ultrapure DiamondGrowth by Chemical
Vapor Deposition
T. Teraji, NIMS (Japan)

Monday, September 28
Opening & Plenary Sessions (Main Hall A, B)

Lunch
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108bJ-1: Device andCharacterization(14:00-15:30)
Chairs: S. Matsumoto(Kyushu Inst. of
Tech.)
H. Umezawa(AIST)

K-1: Tunnel FET(14:00-15:50)
Chairs: M. Masahara(AIST)
M. Kobayashi(Univ. of Tokyo)

M-1: High-Speed &High-Frequency Devices(14:00-15:45)
Chairs: S. Suzuki(Tokyo Tech)
E. Y. Chang(NCTU)

N-1: Junction Technology(14:00-15:30)
Chairs: S. Migita (AIST)
T. Yamaguchi(Renesas
Electronics)

O-1: CBRAM and IGZO
Memory(14:00-15:30)
Chairs: T. Sakamoto (NEC)Y. Sasago (Hitachi)

P-1: Spin-orbit Effect andApplication for Sensors(14:00-15:45)
Chairs: S. Mizukami(Tohoku Univ.)
C. Song(Tsinghua Univ.)

14:00 J-1-1
Self-Aligned Formationof the Trench Bottom
Shielding Region in
4H-SiC UMOSFETs
T. Kojima1,2, S. Harada1,3,
Y. Kobayashi1,2, M.
Sometani1,2, K. Ariyoshi1,4,J. Senzaki1,3, M. Takei1,2,
Y. Tanaka1,3 and H.
Okumura1,3, 1R&D
Partnership for FuturePower Electronics Tech.,2
Fuji Electric Co., Ltd., 3
AIST and 4Toshiba Corp.
(Japan)

14:00 K-1-1 (Invited)
Novel Steep-Slope Switch
Device with Improved
Figures of Merit (FOM)
through Mechanism
Engineering for UltraLow-Power Applications
R. Huang, Q. Huang, C.
Wu, J. Wang, H. Zhu, C.
Chen, L. Guo and Y. Wang,
Peking Univ. (China)

14:00 M-1-1 (Invited)
InGaAs Channel for Low
Supply Voltage
Y. Miyamoto, T. Kanazawa,
Y. Yonai, K. Ohsawa, Y.
Mishima, M. Fujimatsu,
K. Ohashi, S. Nestu and S.
Iwata, Tokyo Tech (Japan)

14:00 N-1-1 (Invited)
Annealing Techniquesfor Low Temperature
Junctions Design in a 3D
VLSI Integration
C. Fenouillet Beranger1,
P. Batude1, S. Kerdiles1,
B. Mathieu1, P. Acosta
Alba1, L. Pasini2,1, V. Lu2,1,
F. Deprat1, L. Brunet1, B.
Sklenard1, P. Rivallin1, O.
Rozeau1, M-P. Samson2, 1,
B. Previtali1, L. Hortemel1,
N. Rambal1,2, V. Lapras1,2,
M. Casse1, S. Reboh1, F.
Piegas Luce1, P. Besson1,
R. Kachtouli1, A. Royer1,
D. Lafond1, H. Dansas1,
F. Aussenac1, J-P. Barnes1
and M. Vinet1, 1CEA-LETI
and 2STMicroelectronics(France)

14:00 O-1-1 (Invited)
Conductive Bridge
RAM (CBRAM):
functionality, reliability
and applications
G. Molas, J. Guy, M. Barci,
F. Longnos, G. Palma, E.
Vianello, P. Blaise, B. De
Salvo and L. Perniola,
CEA-LETI (France)

14:00 P-1-1 (Invited)
Observation of the
Quantum Anomalous
Hall Effect in a Magnetic
Topological Insulator
Electrically Tuned
Magnetic Order andMagnetoresistance in a
Topo-logical Insulator
S.-H. Ji, L.-L. Wang, X.
Chen, K. He, Y. Wang,
X.-C. Ma, Q.-K. Xue,
Tsinghua Univ. (China)- 13 -

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-1: Light Sources andRelated Technologies

C-1: Organic andPerovskite Photovoltaics

E-1: Carbon
Interconnects

F-1: Advanced Vision &Imaging Circuits

G-1: Wide-gap Materials

14:30 A-1-2
High Power and High
Temperature Operation
over 3W/85°C of an
InGaN Laser using a
Novel Double-heat-flow
Packaging Technology
S. Nozaki1, S. Yoshida2, K.
Yamanaka2, O. Imafuji1, S.
Takigawa1, T. Katayama1
and T. Tanaka1, 1Panasonic
Corp. and 2Panasonic
Semiconductor Solutions
Co., Ltd. (Japan)

14:30 C-1-2 (Invited)
Low Temperature
Solution Processablen-i-p Perovskite Solar
Cell
C.Y. Chu, C.Y. Chang and
W.F. Su, National Taiwan
Univ. (Taiwan)

14:30 E-1-2
MEMS Ascorbic Acid
Fuel Cells with Flexible
Electrodes of EnzymeCoated Graphene
Carbon Fiber Cloth
K. Hoshi1, F. Yudai1, K.
Muramatu2, H. Sumi2, Y.
Otani3, D. Kanakura3 andY. Nishioka1, 1Nihon Univ.,
2
Incubation Alliance, Inc.
and 3Inoue Mago Co. Ltd.
(Japan)

14:30 F-1-2
Reconfigurable Hybrid
Parallel Vision Processor
with Full-custom
Compact Distributed
MemoryZ. Chen, J. Yang, L. Liu
and N. Wu, Chinese
Academy of Sci. (China)

14:30 G-1-2
Effect of Stacking
Faults on Magnetic
Flux Pinning in BoronDoped Superconducting
Diamond Films
M. Shibata1,2, T. Kageura1,2,
T. Yamaguchi3, Y. Takano3
and H. Kawarada1,2,
1
Waseda Univ., 2 Kagami
Memorial Res. Inst. forMaterials Sci. and Tech.
and 3NIMS (Japan)

14:45 A-1-3
High Circular Dichroism
Lasing Characteristics inMetal-GaN Spiral Cavity
at Room Temperature
Y.H. Hsiao1, S.W. Liao1,
K.J. Chen1, M.H. Shih1,2and H.C. Kuo1, 1NCTU
and 2Research Center for
Applied Sci., Academia
Sinica (Taiwan)

15:00 C-1-3
Suppression of Thermal
Degradation in
Perovskite Solar Cells by
Robust Encapsulation
N. Hayashi, R. Uchida, M.
Suzuka, K. Kawano and
T. Sekiguchi, Panasonic
Corp. (Japan)

14:45 E-1-3
Interfacial Charge
Transfer Behaviour ofConducting Polymers
as Contact Electrode for
Semiconductor Devices
J. Kawakita, Y. Fujikawa,T. Nagata and T. Chikyow,
NIMS (Japan)

14:50 F-1-3
Low Contrast Motion
Capturing Vision Sensor
with Crystalline Oxide
Semiconductor FETbased In-Pixel Threshold
Voltage Compensation
CircuitS. Maeda1, T. Ohmaru1,
H. Inoue1, T. Nakagawa1,
Y. Kurokawa1, T. Ikeda1,
Y. Suzuki1, N. Yamade1, H.
Miyairi1, M. Ikeda2 and S.
Yamazaki1, 1Semiconductor
Energy Lab. Co., Ltd. and2
Univ. of Tokyo (Japan)

14:45 G-1-3
Beyond 10 μm Thick
Crack-Free GaN Growthon Si for High Power
Device Applications
A. Tanaka, R. Chen and
S.A. Dayeh, Univ. of
California, San Diego(USA)

15:00 A-1-4
Room Temperature
Operation of GaAs/
AlGaAs Quantum
Nanodisks Light Emitting
Diodes Fabricated by
Fusion of Bio-Template
and Neutral Beam
Etching
Y.C. Lai1,2, A. Higo2, C.
Thomas2, T. Kiba3, J.
Takayama3, M. Sugiyama4,
Y. Nakano4, P. Yu1, A.
Murayama3 and S.
Samukawa1,2, 1NCTU, 2
Tohoku Univ., 3 Hokkaido
Univ. and 4Univ. of Tokyo(Taiwan)

15:15 C-1-4
Degradation
Mechanism for Planar
Heterojunction
Perovskite Solar Cells
K. Yamamoto, Md.
Shahiduzzaman, Y.
Furumoto, T. Kuwabara,
K. Takahashi and T. Taima,
Kanazawa Univ. (Japan)

15:00 E-1-4
Effect of Current Stressduring Thermal CVD ofMultilayer Graphene on
Cobalt Catalytic Layer
H. Ichikawa, T. Uchida
and K. Ueno, Shibaura
Inst. of Tech. (Japan)

15:10 F-1-4
A CMOS SPAD Sensor
Featuring Asynchronous
Event-Extraction
Readout Architecture for
Faint Light Detection
X. Yang1, H.Z. Zhu2, T.
Nakura2, T. Iizuka1 and K.
Asada2, 1Univ. of Tokyoand 2VDEC Univ. of Tokyo(Japan)

15:00 G-1-4
Electrical Characteristics
of N-polar p-type GaN
Schottky Contacts
T. Aoki1, T. Tanikawa2, R.
Katayama2, T. Matsuoka2
and K. Shiojima1, 1Univ. of
Fukui and 2IMR, Tohoku
Univ. (Japan)

15:15 A-1-5
Plate-Insertion Stacking
Method for ThreeDimensional Photonic
Crystal Fabrication
T. Tajiri1, S. Takahashi2, J.
Tatebayashi2, S. Iwamoto1,2
and Y. Arakawa1,2, 1IIS,
Univ. of Tokyo and2
NanoQuine, Univ. ofTokyo (Japan)

15:30 C-1-5
Single-walled Carbon
Nanotube Film as
Cathode in Flexible
Indium-free Planar
Heterojunction
Perovskite Solar Cells
I. Jeon1, T. Chiba1, C.
Delacou1, Y. Guo1, A.
Kaskela2, O. Reynaud2, E.
Kauppinen2, S. Maruyama1
and Y. Matsuo1, 1Univ. ofTokyo and 2Aalto Univ.
(Japan)

15:15 E-1-5
Intercalation Dopingwith Metal Chlorides
in Low-TemperatureGrown Multilayer
CVD Graphenefor Interconnect
Applications
H. Miyazaki1,2, R.
Matsumoto3, M. Katagiri1,2,
D. Nishide1,4, R. Ifuku1,4, M.
Takahashi1, Y. Yamazaki1,2,
T. Matsumoto1,4, N.
Sakuma1,2, K. Ueno5, T.
Sakai1,2 and A. Kajita1,2,
1
LEAP, 2 Toshiba Corp., 3
Tokyo Polytechnic Univ.,
4Tokyo Electron Ltd. and5
Shibaura Inst. of Tech.
(Japan)

15:15 G-1-5
Novel Evaluation
Technique of GaN
Surfaces Using Laserinduced Terahertz
Emission
Y. Sakai1, I. Kawayama1,
H. Nakanishi2 and M.
Tonouchi1, 1Osaka Univ.
and 2SCREEN Holdings
Co., Ltd. (Japan)

15:30 E-1-6
Doped Carbon
Nanotubes forInterconnects
J. Robertson1, S.
Esconjauregui1, L.
D'Arsie1, J. Yang1, H.
Sugime1, G. Zhong1, S.
Vollebregt2, R. Ishihara2,
C. Cepek3, G. Duesberg4,
T. Hallam4 and Y. Guo1,
1
Univ. of Cambridge, 2
Delft Univ., 3 TASC and4
Trinity College Dublin(UK)

15:30 G-1-6
In Situ Synchrotron
X-ray Diffraction Studies
of Nitride Semiconductor
Materials
T. Sasaki and M. Takahasi,
JAEA (Japan)

15:30 A-1-6
Precise Coupling ofSingle Germanium
Quantum Dot to Silicon
Photonic Crystal
Nanocavity
C. Zeng1, Y. Ma2, Y.
Zhang1, Z. Jiang2, J. Yu1
and J. Xia1, 1Huazhong
Univ. of Sci. and Tech. and2
Fudan Univ. (China)- 14 -

Monday, September 28
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108bJ-1: Device andCharacterization

K-1: Tunnel FET

M-1: High-Speed &High-Frequency Devices

N-1: Junction Technology O-1: CBRAM and IGZO
MemoryP-1: Spin-orbit Effect andApplication for Sensors

14:15 J-1-2
Characterization ofProcess-Induced Defects
in SiC MOSFETs
by Cross-Sectional
Cathodoluminescence
R. Sugie, T. Uchida, K.
Kosaka and K. Matsumura,
Toray Research Center Inc.
(Japan)

14:30 K-1-2
Design ofComplementary RaisedDrain Tunneling FET
for Ultra-Low Voltage
Applications
Y.B. Zhao, E.R. Hsieh, C.H.
Chien and S.S. Chung,
NCTU (Taiwan)

14:30 M-1-2
Evaluation of InAs
HEMT with Non-Alloyed
Ohmic Contacts & Mesa
Sidewall Etch for RF
and Low-Power Logic
Applications
K.C. Yang1, J.N. Yao1, H.H.
Hsu1, Y.C. Lin1, H.T. Hsu2,
J.S. Maa1, E.Y. Chang1 andH. Iwai3, 1NCTU, 2 Yuan
Ze Univ. and 3Tokyo Tech
(Taiwan)

14:30 N-1-2
Microwave Plasma
Doping: As Activation
and Transport in Ge andSi
H. Miyoshi1, M. Oka1, Y.
Kobayashi1, H. Ueda1,
P.L.G. Ventzek2, Y.
Sugimoto1, G. Nakamura1,
Y. Hirota1, T. Kaitsuka1
and S. Kawakami1, 1Tokyo
Electron Ltd. and 2Tokyo
Electron America, Inc.
(Japan)

14:30 O-1-2
Visible-Light Effects on
Nanoscale Conducting
Filament in SiO2/Cu
CBRAM
T. Kawashima1,2, K.S. Yew1,
Y. Zhou1, M.K. Bera1, H.Z.
Zhang1 and D.S. Ang1,
1
NTU and 2Toshiba Corp.
(Singapore)

14:30 P-1-2
The Interfacial
Dzyaloshinskii-Moriya
Interaction on Pt/Co/
AlOx Multilayer with Ta
Buffer Layer
N.H. Kim1, J. Cho1, J.S.
Kim2, H.J.M. Swagten2 andC.Y. You1, 1Inha Univ. and2
Eindhoven Univ. of Tech.
(Korea)14:30 J-1-3
Effects of HighTemperature Diluted-H2
Annealing on Effective
Mobility of 4H-SiC
MOSFETs with
Thermally-Grown SiO2
H. Hirai and K. Kita, Univ.
of Tokyo (Japan)

14:50 K-1-3
Steep Subthreshold
Swing Metal-OxideSemiconductor FieldEffect Transistors
Utilizing Nonlinear Gate
Dielectric Insulators
H. Ota1,3, S. Migita1,3, K.
Fukuda1 and A. Toriumi2,3,
1
AIST, 2 Univ. of Tokyo and3
JST-CREST (Japan)

14:45 M-1-3 (Invited)
25nm InP HEMT TMIC
Process with 1 THz
Amplifier Circuit Gain
X.B. Mei, W. Yoshida, Z.
Zhou, M. Lange, J. Lee,
P.H. Liu, K. Leong, R. Lai
and W.R. Deal, Northrop
Grumman Corp (USA)

14:50 N-1-3
Formation of n+Poly-Ge
Films with High Electron
Concentration and HighElectron Mobility byFlash Lamp Annealingfor Poly-Ge nMOSFETs
M. Koike1,3, K. Usuda1,3,
T. Mori1,2, T. Maeda1,2 and
T. Tezuka1,3, 1GNC, AIST, 2
AIST and 3Toshiba Corp.
(Japan)

14:50 O-1-3
A 32-kb Embedded
SRAM Using 60nm Crystalline Oxide
Semiconductor
Transistors and Power
Gating with 45-ns 144-fJ/
bit Data Backup
W. Uesugi1, T. Ishizu1,
K. Kato1, T. Onuki1, H.
Tamura1, A. Isobe1, N.
Tsutsui1, Y. Suzuki1, Y.
Okazaki1, M. Fujita2, J.
Koyama1, Y. Yamamoto1
and S. Yamazaki1,
1
Semiconductor Energy
Lab. Co., Ltd. and 2VDEC
Univ. of Tokyo (Japan)

14:45 P-1-3
Estimation of Spin-orbit
Interaction Parameterswith Drifting Spins in
Semiconductor Quantum
Wells
Y. Kunihashi1, H. Sanada1,
H. Gotoh1, K. Onomitsu1,
M. Kohda2, J. Nitta2 andT. Sogawa1, 1NTT BRL and2
Tohoku Univ. (Japan)

14:45 J-1-4
Transient Thermal
Characteristics of
Packaged SiC SBDsand Its Temperature
Dependence
T. Kim and T. Funaki,
Osaka Univ. (Japan)

15:10 K-1-4
Variation Analysis for
Ultra-Low Voltage 8T
Tunnel FET SRAM Using
Closed-Form Analytical
Model of Static Noise
MarginH. Fuketa, S. O'uchi, K.
Fukuda, T. Mori, Y. Morita,
M. Masahara and T.
Matsukawa, AIST (Japan)

15:15 M-1-4
Wide Frequency Tuning
in Resonant-TunnelingDiode Terahertz
Oscillator Using
Forward-Biased Varactor
Diode
S. Kitagawa, S. Suzuki
and M. Asada, Tokyo Tech
(Japan)

15:10 N-1-4
Effects of Microwave
Annealing on Ge
pMOSFET with
Hydrogen-treatedInterfacial Layer
K.S. Chang Liao1, C.C.
Li1, L.J. Liu1, M.C. Li1,
W.F. Chi1, T.M. Lee1, T.H.
Su1, C.H. Fu1 and Y.J.
Lee2, 1National Tsing Hua
Univ. and 2NDL, NARLabs(Taiwan)

15:10 O-1-4
Analysis andExperimental Proofof Deterioration-free
Memory Device Using
CAAC-IGZO FET
M. Tsubuku, T. Takeuchi,
K. Ohshima, T. Murakawa,
M. Fujita, D. Shimada, S.
Sambonsuge, T. Atsumi,
M. Sakakura, K. Kato,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Corp. Ltd.
(Japan)

15:00 P-1-4
Electric Field Control
of Induced Magnetic
Moment in Pd on Co
Layer
A. Obinata1, D.
Hayakawa1, Y. Hibino1,
T. Koyama1, K. Miwa2, S.
Ono2 and D. Chiba1, 1Univ.
of Tokyo and 2CRIEPI(Japan)

15:00 J-1-5
Turn-on Analysis of SiIGBTs with Emitter
Trenches
S. Machida and Y.
Yamashita, Toyota Central
R&D Labs., Inc. (Japan)

15:30 K-1-5
Performance
Improvement in Lattice
Matched SiGeSn/GeSn
P-Channel TFET with
Type-II Staggered
Tunneling Junction
H. Wang1, G. Han1,2, Y.
Liu1, C. Zhang2 and Y.
Hao2, 1Chongqing Univ.
and 2Xidian Univ. (China)

15:30 M-1-5
A Resonant TunnelingSuper Regenerative
Detector with Input/
Output Isolation and
Improved Sensitivity
K. Hu, J. Pan, M. Mori
and K. Maezawa, Univ. of
Toyama (Japan)

15:15 J-1-6
RF Characteristics ofLDMOS Transistors with
Superjunction Structures
B.Y. Chen1,2, K.M. Chen1,
G.W. Huang1 and EdwardY.
Chang2, 1NDL, NARLabs
and 2NCTU (Taiwan)

15:15 P-1-5
Observation of theD´yakonov-Perel´ Spin
Relaxation in Epitaxial
Pt Thin Film and Its
Electrical Manipulation
J.C. Ryu, S. Takasuna,
K. Yoshizumi, M. Kohda
and J. Nitta, Tohoku Univ.
(Japan)

15:30 P-1-6
Highly Sensitive
Magnetic Field Sensor
Devices Based on
Magnetic Tunnel
Junctions with CoFeSiBElectrode
D. Kato1, M. Oogane1, K.
Fujiwara1, J. Jouno2, H.
Naganuma1, H. Katsurada2
and Y. Ando1, 1Tohoku
Univ. and 2KONICAMINOLTA, Inc. (Japan)- 15 -

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

A-2: MO and EO Devices(16:05-17:50)
Chairs: H. Shimizu(Tokyo Univ. ofAgri. & Tech.)
T. Shimizu(PETRA)

D-2: 2D Material-based
Devices(16:05-17:50)
Chairs: K. Nagashio(Univ. of Tokyo)
Y. Ohno(Nagoya Univ.)

E-2: Interconnects andBonding(16:05-18:05)
Chairs: M. Kodera(Toshiba)
M. Fujino(Univ. of Tokyo)

F-2: Advanced Imaging& Measurement Circuits
for Bio and Medical
Applications(16:05-17:55)
Chairs: H. Takao(Kagawa Univ.)
J. Ohta (NAIST)

16:05 A-2-1 (Invited)
Magneto-surfaceplasmon Effect inMagnetic/Nonmagnetic
Films
Y. Ashizawa and K.
Nakagawa, Nihon Univ.
(Japan)

16:05 D-2-1 (Invited)
Atomically-thin
Semiconductors
K. Tsukagoshi, NIMS
(Japan)

16:05 E-2-1 (Invited)
Ultra-Heat ResistantInterconnection for
Wide Band Gap
Semiconductors
K. Suganuma, S. Nagao,
T. Sugahara and J. Jiu,
Osaka Univ. (Japan)

16:05 F-2-1 (Invited)
Electronic Device
from TFT Display
for Applications on
Biological Cells
A. Tixier Mita, S. Ihida,
B.D. Segard, G.A.
Cathcart, T. Takahashi, H.
Fujita and H. Toshiyoshi,
Univ. of Tokyo (Japan)

16:35 A-2-2
Spatially Resolved Pumpprobe Magneto-optical
Kerr Effect in Permalloy
Films
S. Iihama1, Y. Sasaki1, Y.
Ando1 and S. Mizukami2,
1
Tohoku Univ. and 2WPIAIMR, Tohoku Univ.
(Japan)

16:35 D-2-2
Ultra-Sensitive 2D
Photodetectors Basedon Large-Scale
Molybdenum Disulfide
Crystals
Z.P. Ling1, R. Yang1, J.W.
Chai2, S.J. Wang2, Y. Tong1,
D. Lei1, Q. Zhou1, X.
Gong1, D.Z. Chi2 and K.W.
Ang1, 1SNDL, NUS and
2Inst. of Material Res. andEng. (Singapore)

16:35 E-2-2 (Invited)
Nanomechanical
Characterization ofIntermetallic Compounds
in MiniaturizedInterconnections
J.M. Song, Natl. Chung
Hsing Univ. (Taiwan)

16:35 F-2-2
A CMOS Image Sensor
with Lateral Electric
Field Modulation
Pixels for Sub NanoSecond Time Response
Fluorescence Lifetime
Imaging Microscopy
Z. Li, M.W. Seo, K.
Kagawa, K. Yasutomi
and S. Kawahito, Univ. of
Shizuoka (Japan)

16:50 A-2-3
Magneto-Optical
Switching Devices
Based on Si Photonic
Resonators
K. Noda, K. Okada, Y.
Amemiya and S. Yokoyama,
Hiroshima Univ. (Japan)

16:50 D-2-3
Source/Drain Contact
Engineering of
Molybdenum Disulphide(MoS2) Devices
W.S. Leong, X. Luo, Y.
Li, K.H. Khoo, S.Y. Quek
and J.T.L. Thong, NUS(Singapore)

17:05 E-2-3
Wafer Bonding of
SiC-SiC and SiC-Si
by Modified Suface
Activated Bonding
MethodF. Mu1, M. Fujino1,
T. Suga1, K. Iguchi2,
H. Nakazawa2 and Y.
Takahashi2, 1Univ. of Tokyoand 2Fuji Electric Co., Ltd.
(Japan)

16:55 F-2-3
Improvement of Power
Consumption and SNRof Self-reset Pixels for
an Implantable CMOS
Image Sensor
T. Yamaguchi, Y. Sunaga,
M. Haruta, H. Takehara,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

17:05 A-2-4
Electro-Optic Polymer/
TiO2 Slot Waveguide
Modulators andEnhanced Electro-Optic
Coefficient of 260 pm/V
Y. Enami1, Y. Jouane1,
J. Luo2 and A. Jen2,
1
Kochi Univ. of Tech. and2
Washington State Univ.
(Japan)

17:05 D-2-4
Tolerance to UV-O3
Exposure of CVD and
Mechanically Exfoliated
MoS2 & Fabrication of
Top-Gated CVD MoS2
FETs
S. Kurabayashi1 and K.
Nagashio1,2, 1Univ. ofTokyo and 2JST-PRESTO(Japan)

17:25 E-2-4
Transfer Methods of
Ultrathin Piezoelectric
Strain Sensor to Flexible
Printed Circuits
T. Yamashita1, S.
Takamatsu1, H. Okada1, T.
Itoh2 and T. Kobayashi1,
1
AIST and 2Univ. of Tokyo(Japan)

17:15 F-2-4
Wireless Data
Transmission in a Brain
Tissue with Intra-Body
Communication by
a Micro-Sized Image
Sensor
H. Hayami, K. Nagata,
M. Haruta, H. Takehara,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

17:20 A-2-5 (Late News)
Stimulated Emission with
Nearly 100% Circular
Polarization at RT in
GaAs-based DHs with
Fe/Crystalline AlOX Spin
Injectors
N. Nishizawa, K.
Nishibayashi and H.
Munekata, Tokyo Tech
(Japan)

17:20 D-2-5
HfS2 Electron Double
Layer Transistor withHigh Drain Current
T. Kanazawa1, T.
Amemiya1,2, A. Ishikawa2,3,
V. Upadhyaya1, T. Tanaka2,
K. Tsuruta3 and Y.
Miyamoto1, 1Tokyo Tech,
2
RIKEN and 3Okayama
Univ. (Japan)

17:45 E-2-5
3D Sequential Integration
via Direct Bondingof Highly Conductive
Sputtered Tungsten Films
L. Benaissa1,2, P.
Gondcharton1,2, B.
Imbert1,2, C. Sabbione1,2, G.
Rodriguez1,2, D. Mariolle1,2
and D. Lafond1,2, 1Univ.
Grenoble Alpes and 2CEALETI (France)

17:35 F-2-5
Area-Efficient andWide-Range Impedance
Analysis Circuit forMultichannel High
Quality Brain Signal
Recording System
T. Iwagami1, T. Tani1,
K. Ito1, S. Nishino2, T.
Harashima1, K. Kiyoyama2
and T. Tanaka1, 1Tohoku
Univ. and 2Nagasaki Inst.
of Applied Sci. (Japan)- 16 -

1F 108aMonday, September 28
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207J-2: Process andCharacterization(16:05-17:05)
Chairs: S. Harada(Nagoya Univ.)
T. Uesugi(Toyota Central
R&D Labs.)

K-2: Ge / III-V(16:05-17:50)
Chairs: O. Weber(CEA-LETI)
G. Tsutsui (IBM)M-2: GaN FETs
(16:05-17:50)
Chairs: T. Hashizume(Hokkaido Univ.)
M. Kuzuhara(Univ. of Fukui)N-2: Process for FullyDepleted Devices(16:05-17:05)
Chairs: H. Morioka(SOCIONEXT)T. Aoyama(Toshiba)

O-2: Nano EngineeredThin Oxide Film
(16:05-17:55)
Chairs: N. Fujimura(Osaka Pref. Univ.)
H. Saito(Fujitsu Semicon.)

16:05 J-2-1
Al Doping of 4H-SiC
by Laser Irradiation
to Coated Film and Its
Application to Junction
Barrier Schottky DiodeA. Ikeda, R. Sumina, H.
Ikenoue and T. Asano,
Kyushu Univ. (Japan)

16:05 K-2-1 (Invited)
Ge CMOS Devices and
Logic Circuits
H. Wu and P.D. Ye, Purdue
Univ. (USA)

16:05 M-2-1 (Invited)
GaN Metal-OxideSemiconductor HEMTs:
Selected Physical Aspects
and Characterization
M. Tapajna, D. Gregusova
and J. Kuzmik, Instituteof Electrical Engineering,
Slovak Academy of
Sciences (Slovakia)

16:05 N-2-1
Optimization ofExtension Doping
Condition of FinFETs
for Ultra-Low-Power
Applications
T. Matsukawa, Y.X. Liu, T.
Mori, Y. Morita, S. O'uchi,
H. Fuketa, S. Otsuka, S.
Migita and M. Masahara,
AIST (Japan)

16:05 O-2-1 (Invited)
Scaling and Optimizationof Ferroelectric Hafnium
Oxide for Memory
Applications and Beyond
J. Mueller, P. Polakowski
and S. Riedel, Fraunhofer
IPMS (Germany)

16:20 J-2-2
4H-SiC Vertical Gate
Trench with a WellControlled Shape
Uniformly Formed byHigh Rate Etching andAnnealing with Solid
SourceH. Kitai, H. Shiomi, H.
Tamaso and K. Fukuda,
AIST (Japan)

16:35 K-2-2
Impact of Bandstructure
Effects in III-V
nMOSFETs
G. Hiblot1,3, Q. Rafhay3, G.
Mugny1,2, T. Ferrotti1,2, G.
Ghibaudo3 and F. Boeuf1,
1
STMicroelectronics, 2
CEA-LETI and 3IMEPLAHC (France)

16:35 M-2-2 (Late News)
Highly Reduced Current
Collapse in AlGaN/GaN
HEMTs by Combined
Application of Oxygen
Plasma Treatment andField-plate Structures
J. Asubar, S. Yoshida, H.
Tokuda and M. Kuzuhara,
Univ. of Fukui (Japan)

16:25 N-2-2
Ω-Gate Nanowire
Transistors Realized
by Sidewall Image
Transfer Patterning:
35nm Channel Pitch
and Opportunities for
Stacked-Nanowires
Architectures
L. Gaben1,2,3, S. Barraud1,
P. Pimenta-Barros1, Y.
Morand2, J. Pradelles1,
M.P. Samson2, B. Previtali1,
P. Besson2, F. Alain1, S.
Monfray2, F. Boeuf2, T.
Skotnicki2, F. Balestra3 and
M. Vinet1, 1CEA-LETI, 2
STMicroelectronics and3
IMEP-LAHC (France)

16:35 O-2-2
Effect of Stress on
Ferroelectricity of(Hf0.5Zr0.5)O2 Thin Films
H. Funakubo1, T.
Shiraishi1, T. Shimizu1, T.
Yokouchi1, T. Oikawa1 andH. Uchida2, 1Tokyo Techand 2Sophia Univ. (Japan)

16:35 J-2-3
Fabrication of Nitrogenvacancy Centers inDiamond Power Devices
for Electric-Field Sensing
W. Naruki1, K. Tahara1, T.
Iwasaki1,3, H. Kato2,3, T.
Makino2,3, M. Ogura2,3, D.
Takeuchi2,3, S. Yamasaki2,3
and M. Hatano1,3, 1Tokyo
Tech, 2 AIST and 3JSTCREST (Japan)

16:55 K-2-3
High Performance Low
Thermal Budget Ge nand p-MOSFETs byusing Ion Implantation
after Germanidation
Technique
W.H. Chang, H. Ota and T.
Maeda, AIST (Japan)

16:50 M-2-3
AlGaN/GaN MOSHFETs Exhibiting
Improved Hysteresis inTransfer Characteristics
with Recessed Gate
Structures Formed by
Selective Regrowth
S. Nakazawa, N. Shiozaki,
N. Negoro, N. Tsurumi,
Y. Anda, M. Ishida and T.
Ueda, Panasonic Corp.
(Japan)

16:45 N-2-3
A New Method to Induce
Local Tensile Strain in
SOI Wafers: First Strain
Results of the "BOX
Creep" Technique
A. Bonnevialle1,2, C. Le
Royer2, Y. Morand1, S.
Reboh2, J.M. Pedini1, A.
Roule2, D. Marseilhan2, P.
Besson1, D. Rouchon2, N.
Bernier2, C. Tabone2, C.
Plantier2 and M. Vinet2,
1
STMicroelectronics and2
CEA-LETI (France)

16:55 O-2-3
Switching Mechanism in
GeSbTe Phase Change
Memory Superlattices
J. Robertson and X. Yu,
Cambridge Univ. (UK)

16:50 J-2-4
Evaluation of
Temperature
Dependence of Surface
Recombination Velocities
for n-type 4H-SiC
K. Kohama, Y. Mori, M.
Kato and M. Ichimura,
Nagoya Inst. of Tech.
(Japan)

17:15 K-2-4
Steep-Slope Tunnel
FET using InGaAs-InP
Core-Shell Nanowire/Si
Heterojunction
K. Tomioka1,2, F. Ishizaka1,
J. Motohisa1 and T. Fukui1,
1
Hokkaido Univ. and 2JSTPRESTO (Japan)

17:05 M-2-4
MOS Characteristics
on Homoepitaxial GaN
Layer
S. Takashima1, K. Ueno1,
H. Matsuyama1, M. Edo1, J.
Suda2 and K. Nakagawa3,
1
Fuji Electric Co., Ltd., 2
Kyoto Univ. and 3Univ. of
Yamanashi (Japan)

17:15 O-2-4
Topotactic Reductive
Synthesis of A-site
Cation-Ordered
Perovskite YBaCo2Ox (x= 4.5-5.5) Epitaxial Thin
Films
T. Katayama1, A.
Chikamatsu1,2, T.
Fukumura2,3 and T.
Hasegawa1,2,4, 1Univ. ofTokyo, 2 JST-CREST, 3
Tohoku Univ. and 4KAST(Japan)17:35 K-2-5 (Late News)
Investigation of FOM
of Tunnel FET Devices
and OTA Design for
Analog/Mixed-Signal
Applications
Y.N. Chen1, P. Su1, J.C.S.
Woo2 and C.T. Chuang1,
1
NCTU and 2UCLA(Taiwan)

17:20 M-2-5
Low-Frequency Noisein AlTiO/AlGaN/
GaN Metal-InsulatorSemiconductor
Heterojunction FieldEffect Transistors
S.P. Le, T. Ui, T.Q. Nguyen,
H.A. Shih and T. Suzuki,
JAIST (Japan)

17:35 O-2-5
Formation of Ge Oxide
Film by Neutral Beam
Post Oxidation using Al
Metal Film
T. Ohno1,2, D. Nakayama3
and S. Samukawa1,3, 1WPIAIMR, Tohoku Univ., 2 JSTPRESTO and 3IFS, Tohoku
Univ. (Japan)- 17 -

1F 108b

Monday, September 28
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102A-2: MO and EO Devices

D-2: 2D Material-based
Devices

17:35 A-2-6 (Late News)Electrical Manipulationof Exchange Springin Antiferromagnetic
MetalsC. Song1, Y.Y. Wang1,
S.M. Zhou2 and F. Pan1,
1
Tsinghua Univ. and2
Tongji Univ. (China)

17:35 D-2-6
Schottky Barrier Heights
and Band Alignmentsin Transition Metal
Dichalcogenides
J. Robertson and Y. Guo,
Cambridge Univ. (UK)- 18 -

1F 107a1F 107b

1F 108aMonday, September 28
2F 201

2F 202

2F Small Hall

2F 204M-2: GaN FETs
17:35 M-2-6
Fabrication andCharacterization of
AlTiO/InAlN/AlN/
GaN Metal-InsulatorSemiconductor FieldEffect Transistor
S. Yamaguchi, T. Ui, J.
Liang, H.A. Shih and T.
Suzuki, JAIST (Japan)- 19 -

2F 206

2F 207

1F 108b