Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

A-6: Optical Sensing(9:00-10:00)
Chairs: N. Iizuka (Toshiba)
S. Nishikawa(Mitsubishi
Electric)

C-6: III-V Photovoltaics
and Related Technologies(9:00-10:00)
Chairs: T. Hoshii(Univ. of Tokyo)
T. Negami(Panasonic)

D-6: Nanowire Synthesis
and Properties I(9:00-10:15)
Chairs: M. Arita(Univ. of Tokyo)
N. Fukata (NIMS)

E-6: 3D / TSV(9:00-10:30)
Chairs: T. Fukushima(Tohoku Univ.)
M. Takeyama(Kitami Inst. of
Tech.)

F-6: Advanced Memories
and Circuits(9:00-10:20)
Chairs: I. Akita(Toyohashi Tech)
Y. Mita(Univ. of Tokyo)

9:00 A-6-1 (Invited)
Si and SiN Biophotonic
Technology Platform,
Applied to Biosensing,Spectroscopy, and LensFree Imaging
W. Van Roy1, P. Neutens1,
T. Claes1, R. Jansen1, A.
Subramanian2, K. Jans1,
R. Vos1, J. O'Callaghan1,
D. Vercruysse1, R. Stahl1,
V. Mukund1, B. Du Bois1,
P. Helin1, A. Stassen1, S.
Severi1, D. Martens2, P.
Bienstman2, P. Deshpande1,
R. Baets2, A. Lambrechts1,
L. Lagae1,3, X. Rottenberg1
and P. Van Dorpe1,3, 1Imec,
2
Ghent Univ. and 3KU
Leuven (Belgium)

9:00 C-6-1 (Invited)
Recent Resultsfor Concentrator
Photovoltaics in JapanM. Yamaguchi1, T.
Takamoto2, K. Araki3 andN. Kojima1, 1Toyota Tech.
Inst., 2 Sharp Corp. and3
Daido Steel Corp. (Japan)

9:00 D-6-1 (Invited)
Nanowire Growth
as a Means for the
Monolithic Integrationof III-V Compound
Semiconductors on Si
L. Geelhaar, PaulDrude-Institut fuer
Festkoerperelektronik(Germany)

9:00 E-6-1 (Invited)
3D Interconnection ofSingle Micron Pitch
by Hybrid Bonding
Technology
M. Nimura1, M. Ohyama1,
S. Shoji1, M. Tamura2, T.
Enomoto2, A. Shigetou3 andJ. Mizuno1, 1Waseda Univ.,
2
Nissan Chemical Indus.
and 3NIMS (Japan)

9:00 F-6-1
39% tAC Improvement,
11% Energy Reduction,
32Kbit 1R/1W 2port
SRAM using Two-stage
Read Boost and WriteBoost after Read Sensing
SchemeY. Yamamoto1, S.
Moriwaki1, A. Kawasumi2,
S. Miyano3 and H.
Shinohara4, 1Socionext
Inc., 2 Toshiba Corp., 3
STARC and 4Waseda Univ.
(Japan)9:30 A-6-2
Stretchable Photonic
Crystal CoupledNanobeam Lasers forStretch Sensing
C. Wang, T.W. Lu and P.T.
Lee, NCTU (Taiwan)

9:30 C-6-2
Terahertz Emission from
Individual Subcells in a
Triple Junction Solar Cell
Excited by a Wavelength
Tunable Pulsed Laser
S. Hamauchi1, Y. Sakai1,
T. Umegaki1, A. Ito2, H.
Nakanishi2, I. Kawayama1,
H. Murakami1 and M.
Tonouchi1, 1Osaka Univ.
and 2SCREEN Holdings
Co., Ltd. (Japan)

9:30 D-6-2
Bridging the Gap
between the Nanometerscale Bottom-up andMicrometer-scale Topdown Approaches
for Site-defined InP/
InAs Heterostructure
Nanowires
G. Zhang1,2, M.
Takiguchi1,2, K. Tateno1,2
and H. Gotoh1, 1NTT BRL
and 2NTT Nanophotonics
Center (Japan)

9:30 E-6-2
Evaluation of 2-D Local
Stress Distribution in
Stacked IC Chip Using
Stress-Induced Retention
Time Modulation of
DRAM Cell Array
S. Tanikawa, H.
Hashiguchi, Y. Sugawara,
H. Kino, T. Fukushima, M.
Koyanagi and T. Tanaka,
Tohoku Univ. (Japan)

9:20 F-6-2
Pure CMOS One-Time
Programmable Memories
using a Combination ofGate-Ox Anti-fuse andPoly-Si Fuse
M. Matsumoto, K.
Tatsumura, K. Zaitsu andS. Yasuda, Toshiba Corp.
(Japan)9:45 A-6-3
Gold Bowtie Aperture
with Projected Pad
Underneath and Its
Capability in Optical
Sensing
P.Y. Chen, T.W. Lu and P.T.
Lee, NCTU (Taiwan)

9:45 C-6-3
Tandem Photovoltaicphotoelectrochemical
Device for Solar
Hydrogen Generation
S. Kosar1, Y. Pihosh2, I.
Turkevych3,4, K. Mawatari2,
J. Uemura2, Y. Kazoe2,
K. Makita3, T. Sugaya3,
T. Matsui3, D. Fujita4,
M. Tosa4, Y.M. Struk1, M.
Kondo3 and T. Kitamori2,
1
Chernivtsi National Univ.,2
Univ. of Tokyo, 3 AIST and
4
NIMS (Ukraine)

9:45 D-6-3
Structural and Magnetic
Characterizations ofVertical Ferromagnetic
MnAs/Semiconducting
InAs Heterojunction
Nanowires
R. Kodaira, K. Kabamoto,
S. Sakita and S. Hara,
Hokkaido Univ. (Japan)

9:50 E-6-3
Investigation of Low
Temperature Cu Pillar
Thermosonic Bondingfor 3D Integration
Applications
S.L. Lu1, Y.P. Huang1,
Y.S. Huang1, Y.H. Tseng2,
M.F. Shu2 and K.N. Chen1,
1
NCTU and 2ASE Group(Taiwan)

9:40 F-6-3
Digitally Calibrated
Dynamic LatchedComparator with
Stochastic Offset Voltage
Detection Technique for
Low-Power ADCs
T. Okazawa1, T. Kawano1,
M. Ishida1,2 and I. Akita1,
1
Toyohashi Tech and2
EIIRIS (Japan)

10:00 D-6-4
Effects of Polytypism
on the Thermoelectric
Properties of Si
Nanowires: aCombination of Density
Functional Theory and
Boltzmann Transport
Equation Calculations
T. Komoda, T. Akiyama, K.
Nakamura and T. Ito, Mie
Univ. (Japan)

10:10 E-6-4
Novel Integrationof Ultra-thin Al2O3
with Low-k Dielectricas Bi-layer Linerfor Capacitance
Optimization and Stress
Mitigation in Cu-TSV
L. Zhang1,2, H.Y. Li1, Y.
Shang2, W. Yoo3, H. Yu2
and C.S. Tan2, 1Inst. ofMicroelectronics, A*STAR,2
NTU and 3WaferMasters,
Inc. (Singapore)

10:00 F-6-4
No Reattaching and 8
Directions Detectable
Octagonal MOSFET
Stress Sensor
T. Harada, K. Kaiwa andY. Yamazaki, Yamagata
Univ. (Japan)- 38 -

1F 107a1F 107b

1F 108aWednesday, September 30
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

H-6: Quantum Optics(9:00-10:15)
Chairs: T. Tanamoto(Toshiba)
T. Nakaoka(Sophia Univ.)

J-6: SiC MOS(9:00-10:15)
Chairs: D. Hisamoto(Hitachi)C.-F. Huang(National Tsing
Hua Univ.)

K-6: Physics(9:00-10:00)
Chairs: N. Mori
(Osaka Univ.)
M. Hane(Renesas
Electronics)

M-6: Oxide Devices(9:00-10:00)
Chairs: K. Maezawa(Univ. of Toyama)
M. Kuzuhara(Univ. of Fukui)N-6: 2D Materials andBand Engineering(9:00-10:10)
Chairs: O. Nakatsuka(Nagoya Univ.)
T. Aoyama(Toshiba)

O-6: NAND Flash Device(9:00-10:30)
Chairs: K. Yamamoto(Toshiba)
K. Hamada(Micron Memory
Japan)

9:00 H-6-1 (Invited)
Quantum Communications
with Semiconductor
Devices
R.M. Stevenson, Toshiba
Research Europe (UK)9:00 J-6-1 (Invited)Threshold-Voltage
Instability in SiC
MOSFETs
A. Lelis, R. Green and D.
Habersat, U.S. Army Res.
Lab. (USA)

9:00 K-6-1
Modeling of Nonlinear
Thermal Resistance in
FinFET
B.K. Kompala1,
P. Kushwaha1, S.
Khandelwal2, J.P. Duarte2,
A.S. Medury2, C. Hu2 andY.S. Chauhan1, 1IIT Kanpurand 2Univ. of California
Berkeley (India)

9:00 M-6-1
Improved Performanceof α-IGZO Thin-Film
Transistors with an Au/
HfSiO/IGZO(O2-rich)
Schottky Source
C.H. Hung1, S.J. Wang1,
Y.H. Chen1, C.H. Wu2, C.
Lin1, P.Y. Liu1, Y.C. Tu1
and T.H. Lin1, 1NCKU
and 2Chung Hua Univ.
(Taiwan)

9:00 N-6-1 (Invited)High PerformanceElectronics Based on
Novel Two Dimensional
Materials
Y. Wu, Huazhong Univ. ofSci. and Tech. (China)

9:00 O-6-1 (Invited)
Future Prospects of Data
Storage Technologies:
NAND Flash Memory
and Storage Class
Memory Hybrid System
K. Takeuchi, Chuo Univ.
(Japan)9:30 H-6-2
Electron Spin CoherenceTime of NitrogenVacancy Center in
Diamond Improved byExternal Electric Field
S. Kobayashi1,2, H.
Morishita1, Y. Matsuzaki3,
S. Miwa1, Y. Suzuki1 and N.
Mizuochi1,2, 1Osaka Univ., 2
JST-CREST and 3NTT BRL(Japan)9:30 J-6-2
Threshold Voltage
Instability in 4H-SiC
MOSFETs with Nitrided
Gate Oxide Revealed by
Non-relaxation Method
M. Sometani1,2, D.
Okamoto2, S. Harada2, H.
Ishimori2, S. Takasu2, T.
Hatakeyama2, M. Takei1,2,
Y. Yonezawa2, K. Fukuda2
and H. Okumura2, 1Fuji
Electric Co., Ltd. and
2
AIST (Japan)

9:20 K-6-2
Ballistic and Quasiballistic Hole Transport
Properties in Germanium
Nanowire pMOSFETs
Based on an Extended"Top of the Barrier"Model
H. Tanaka, J. Suda andT. Kimoto, Kyoto Univ.
(Japan)9:15 M-6-2
Correlation between
Crystallinity andFormation of Oxygen
Vacancies in IGZO Comparison between
Crystal and Amorphous
Using First-Principles
Calculations T. Hiramatsu, M.
Nakashima, E. Kikuchi, N.
Ishihara, M. Tsubuku, K.
Dairiki and S. Yamazaki,
Semiconductor Energy
Lab. Co., Ltd. (Japan)

9:30 N-6-2
Two Dimensional SiBased Semiconductor
Si1-YCY: C Atom
Induced Band Structure
Modulation at Visible
RegionT. Mizuno1, Y. Nagamine1,
U. Omata1, Y. Suzuki1, W.
Urayama1, T. Aoki1 and T.
Sameshima2, 1Kanagawa
Univ. and 2Tokyo Univ. ofAgri. & Tech. (Japan)

9:30 O-6-2
Effects of Cell Vth State
and Number of Traps on
Statistical Distribution of
Random Telegraph Noisein Scaled NAND Flash
MemoryT. Tomita and K. Miyaji,
Shinshu Univ. (Japan)

9:45 H-6-3
Photon Correlation
Study of Background
Suppressed Single InGaN
Nanocolumns
T. Yamamoto, M. Maekawa,Y. Imanishi, S. Ishizawa, T.
Nakaoka and K. Kishino,
Sophia Univ. (Japan)

9:45 J-6-3
Effect of Nitridation for
SiO2/SiC Interface on
Defects Properties near
Conduction Band Edge
W. Takeuchi1, K.
Yamamoto2, M. Sakashita1,
T. Kanemura2, O.
Nakatsuka1 and S. Zaima1,
1
Nagoya Univ. and2
DENSO Corp. (Japan)

9:40 K-6-3
Experimental Study on
Interface Region of TwoDimensional Si Layers
T. Mizuno1, Y. Suzuki1, R.
Kikuchi1, A. Suzuki1, M.
Yamanaka1, Y. Nagamine1,
T. Aoki1 and T. Maeda2,
1
Kanagawa Univ. and
2
AIST (Japan)

9:30 M-6-3
Ideal Deep-Subthreshold
Characteristics in C-Axis
Aligned Crystalline
Oxide Semiconductor
FET
D. Matsubayashi, M.
Tsubuku, T. Takeuchi, S.
Matsuda, K. Ohshima, T.
Tanaka, A. Shimomura, M.
Sakakura, Y. Yamamotoand S. Yamazaki,
Semiconductor Energy
Lab. Co., Ltd. (Japan)

9:50 N-6-3
Chemical Trend of
Isoelectronic Traps in
Si Tunnel FET; FirstPrinciples Study
S. Iizuka and T. Nakayama,
Chiba Univ. (Japan)

9:50 O-6-3
Improvement of Cell VT
Distribution & Program
Disturbance of NAND
Flash Device by Using
Tilt Implantation for Cell
Junction Counter Doping
D.Y. Kim, N.K. Kim, K.T.
Lee, H.Y. Shim, S.K. Park,
B.K. Kim, K.B. Lee, H.Y.
Chang, K.O. Ahn and
J.W. Kim, SK Hynix Inc.
(Korea)10:00 H-6-4
Tolerance of Photon
Entanglement in a
Droplet Epitaxial
Quantum Dot Grown on(111)A Surface
H. Nakajima1, X. Liu2,
N. Ha2, R. Takemoto1, H.
Kurosawa1, T. Mano2, T.
Kuroda2, K. Sakoda2, I.
Suemune1 and H. Kumano1,
1
Hokkaido Univ. and
2
NIMS (Japan)

10:00 J-6-4
Origin of Low Channel
Mobility and Threshold
Voltage Instability of
SiC-MOSFETs
H. Shiomi1, H. Kitai1, M.
Tsujimura1, Y. Kiuchi1,
D. Nakata2, S. Ono2, K.
Kojima1, K. Fukuda1, K.
Sakamoto1, K. Yamasaki2
and H. Okumura1, 1AIST
and 2New JRC (Japan)

9:45 M-6-4
Trench Gate Process
for 60-nm-Node C-Axis
Aligned Crystalline InGa-Zn-O Field-EffectTransistors
Y. Asami, A. Shimomura, Y.
Okazaki, D. Matsubayashi,
M. Tsubuku, M. Kurata, S.
Okamoto, S. Sasagwa, T.
Moriwaka, T. Kakehata,
Y. Yakubo, K. Kato,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Co., Ltd.
(Japan)- 39 -

10:10 O-6-4
A New High Density
FinFET OTP Technology
P.C. Peng1, Y.Z. Chen1,
H.W. Pan1, W.Y. Hsiao2,
K.H. Chen2, Y.H. Kuo2,
C.P. Lin2, B.Z. Tien2, T.S.
Chang2, Y.C. King1 andC.J. Lin1, 1National Tsing
Hua Univ. and 2TSMC(Taiwan)

1F 108b

Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107aA-7: III-V Devices andRelated Technologies(10:45-12:30)
Chairs: T. Isu(Tokushima Univ.)
T. Shimizu(PETRA)

C-7: Crystalline Silicon
Photovoltaics(10:45-12:30)
Chairs: M. Isomura(Tokai Univ.)
L.-S.Hong(TECRO in Japan)

D-7: Nanowire Synthesis
and Properties II(10:45-12:30)
Chairs: H. Tatsuoka(Shizuoka Univ.)
A. Kikuchi(Sophia Univ.)

E-7: Advanced Circuits
and MEMS Integration(10:45-12:35)
Chairs: J. C. Guo (NCTU)
M. Ueki(Renesas
Electronics)

F-7: Biosensors(10:45-12:30)
Chairs: C.-S. Lai(Chang Gung
Univ.)
T. Tanaka(Tohoku Univ.)

G-7: Organic Devices II(10:45-12:45)
Chairs: K. Fujita(Kyushu Univ.)
T. Shimada(Hokkaido Univ.)

10:45 A-7-1
Heterogeneous Quantum
Dots/Silicon Photonics
Wavelength Tunable
Laser Diode
T. Kita1, N. Yamamoto2,
T. Kawanishi2 and H.
Yamada1, 1Tohoku Univ.
and 2NICT (Japan)

10:45 C-7-1
Formation of Thermally
Stable a-Si Passivation
Films using Liquid Si
C. Guo1, K. Ohdaira1,
H. Takagishi2 and T.
Shimoda1, 1JAIST and2
Fukushima Univ. (Japan)

10:45 D-7-1 (Invited)
Self-assembled
Functional
Nanocomposites
Y.H. CHU, NCTU (Taiwan)

10:45 E-7-1 (Invited)
Manufacturing
Technology of All-solidstate Thin-film Lithium
Secondary Battery forStand-alone MEMS/
Sensor Applications
K Suu, ULVAC, Inc.
(Japan)10:45 F-7-1 (Invited)
Ultrasensitive Sensors
Using Enhanced Surface
Plasmon Resonancesin Capped Metallic
Nanostructures
K.L. Lee1 and P.K. Wei1,2,
1
Academia Sinica and2
National Yang-Ming Univ.
(Taiwan)

10:45 G-7-1 (Invited)
Controlling Light at the
Nano-Scale via Molecular
Tunnel Junctions
C.A. Nijhuis, NUS(Singapore)

11:00 A-7-2
Waveguide InGaAs
Metal-semiconductormetal Photodetector
Monolithically Integrated
with InP Grating
Coupler on III-V CMOS
Photonics Platform
Y.P. Cheng1, 2, Y. Ikku1, 2, M.
Takenaka1, 2 and S. Takagi1, 2,
1Univ. of Tokyo and 2JSTCREST (Japan)

11:00 C-7-2
Investigation of Interface
State Density and Fixed
Charge of SrxSiOx+2 on
the 2×1 Sr-reconstructed
Si Substrate
S. Taniwaki1, Y. Hotta1,3, H.
Yoshida1,3, K. Arafune1,3,
A. Ogura2,3 and S. Satoh1,3,
1
Univ. of Hyogo, 2 Meiji
Univ. and 3JST-CREST(Japan)

11:15 D-7-2
Fabrication of Vertical
Ge Nanowires on
Amorphous Substrates
by Combining Auseeded Chemical-Vapor
Deposition with Alinduced Crystallization
M. Nakata1, K. Toko1, W.
Jevasuwan2, N. Fukata2
and T. Suemasu1, 1Univ.
of Tsukuba and 2NIMS(Japan)

11:15 E-7-2
Novel Gain-Controlled
Sensor Circuits Designed
by Multi-physics
Simulation for CMOSMEMS Accelerometer
T. Konishi1, D. Yamane2,4,M. Takayasu2,4, S. Dosho2,4,
N. Ishihara2,4, K. Masu2,4,
H. Toshiyoshi3,4 and K.
Machida1,2,4, 1NTT AT, 2
Tokyo Tech, 3 Univ. ofTokyo and 4JST-CREST(Japan)

11:15 F-7-2
An Implantable Needlelike Shaped Device
and Its Performance inLensless Fluorescence
Imaging of BiologicalTissues
H. Takehara, Y. Ohta, M.
Motoyama, M. Haruta,
T. Noda, K. Sasagawa, T.
Tokuda and J. Ohta, NAIST(Japan)

11:15 G-7-2
Detection of Mercury(II) Ion in Water using
an Organic Field EffectTransistor with a
Cysteine-functionalizedGold ElectrodeT. Minami, T. Minamiki
and S. Tokito, Yamagata
Univ. (Japan)

11:15 A-7-3
1.3 μmPhotoluminescencefrom InAs/GaAs
Quantum Dots on
CMOS-compatible(001) Silicon by Metalorganic Chemical Vapor
Deposition
Y. Wan, Q. Li, Y. Geng and
K.M. Lau, HKUST (China)

11:15 C-7-3
Temperature-Dependent
Minority Carrier
Lifetime of Crystalline
Silicon Wafers Passivatedby High Quality
Amorphous Silicon Oxide
M. Inaba, S. Todoroki, K.
Nakada and S. Miyajima,
Tokyo Tech (Japan)

11:30 D-7-3
Catalyst-free Growthof InxGa1-xAs/InAs
Coaxial Nanorod
Heterostructures on
Graphene Layers Using
Molecular Beam Epitaxy
Y. Tchoe, J. Jo, M. Kim andG.-C. Yi, Seoul National
Univ. (Korea)

11:35 E-7-3
Zeolite-trench-embedded
Micro Cantilevers for
CMOS Strain-gauge
Integrated Gas Sensors
S. Inoue1, R. Setoguchi1, M.
Denoual2, S. Mintova2 andY. Mita1, 1Univ. of Tokyoand 2Normandie Univ.
(Japan)

11:30 F-7-3
In situ Monitoring ofExtracellular Matrix
Based on Chondrocytes
Behavior using
Biologically-coupledField Effect Transistor
H. Satake1, A. Saito1, T.
Kajisa2, S. Mizuno3 and T.
Sakata1, 1Univ. of Tokyo,
2
PROVIGATE Inc. and3
Harvard Medical School(Japan)

11:30 G-7-3
Highly Flexible
Complementary Inverterwith Pentacence/a-IGZO
Hybrid Thin Film
Transistors
Z. Pei, H.C. Lai and B.J.
Tzeng, National Chung
Hsing Univ. (Taiwan)

11:30 A-7-4
Optical and Electronic
Properties of Ga(N,As,P)
Quantum Wells on Silicon
for Laser Application
S. Gies, S. Karrenberg, M.
Zimprich, T. Wegele, C.
Kruska, A. Beyer, W. Stolz,
K. Volz and W. Heimbrodt,
Philipps Univ. Marburg(Germany)

11:30 C-7-4
Investigation of New
Stacking Surface
Passivation Structureswith Interfacial Tuning
Layers on p-type
Crystalline Silicon for
Solar Cell Applications
N. Ikeno1, 4, T. Katsumata1, 2,
H. Yoshida3, 5, K. Arafune3, 5,
S. Satoh3, 5, T. Chikyow2 andA. Ogura1, 5, 1Meiji Univ., 2
NIMS, 3 Univ. of Hyogo, 4
JSPS Research Fellow and5
JST-CREST (Japan)

11:45 D-7-4
Two Different
Mechanisms for Aufree Growth of InAsSb
Nanowires on Si
Substrate
W.N. Du1, X.G. Yang1, H.Y.
Pan2, X.Y. Wang1, X.H.
Ji1, Z.G. Wang1, H.Q. Xu2
and T. Yang1, 1Chinese
Academy of Sciences and2
Peking Univ. (China)

11:55 E-7-4
S-Parameter
Characterization andLumped-Element
Modelling of mm-Wave
Single-Drift IMPATT
Diode
W. Zhang1, Y. Yamamoto2,
M. Oehme1, K. Matthies1,
B. Tillack2, 3, E. Kasper1
and J. Schulze1, 1Univ.
of Stuttgart, 2 IHPMicroeletronics and 3TU
Berlin (Germany)

11:45 F-7-4
Robust and HighSensitive Myoelectric
Signal Detection utilizing
Stochastic Resonancewith Carbon Nanotube
Composite Paper-based
Surface Electrodes
K. Shirata1, S. Kasai1,
T. Oya2, Y. Hagiwara3,
S. Kaeriyama3 and H.
Nakamura3, 1Hokkaido
Univ., 2 Yokohama National
Univ. and 3STARC (Japan)

11:45 G-7-4
Anodization Patterningfor Organic Electronic
Circuits with Low
Operation Voltage
T. Yokota1,2, T. Sekitani2,3
and T. Someya1,2, 1Univ. ofTokyo, 2 JST-ERATO and3
Osaka Univ. (Japan)

11:45 A-7-5
The Influence of III-V
on Insulator Structure
on Quantum Well
Intermixing
S. Takashima1,2, Y. Ikku1,2,
M. Takenaka1,2 and S.
Takagi1,2, 1Univ. of Tokyoand 2JST-CREST (Japan)

11:45 C-7-5
Catalytic Dopingof Phosphorus andBoron Atoms onto
HydrogenatedAmorphous Silicon Films
J. Seto1,2, K. Ohdaira1,2 and
H. Matsumura1,2, 1JAIST
and 2JST-CREST (Japan)

12:00 D-7-5
Formation of Self-aligned
Pore Arrays on n-GaN
Substrates by Photoassisted Electrochemical
Etching Process
Y. Kumazaki, T. Sato andZ. Yatabe, Hokkaido Univ.
(Japan)12:15 E-7-5
Analysis and Reductionof Leakage Current of
2kV Monolithic Isolator
with Wide Trench Spiral
Isolation Structure
Y. Takeuchi, R. Kuroda andS. Sugawa, Tohoku Univ.
(Japan)

12:00 F-7-5
Respiratory Sensor
Measuring CapacitanceConstructed Across Skin
M. Terasawa, S. Kumagaiand M. Sasaki, Toyota
Tech. Inst. (Japan)

12:00 G-7-5
Pseudo-CMOS Gain
Enhancement by PostAnnealing Organic
Circuits on Ultrathin
Plastic Substrates
A. Reuveny1,2, T. Yokota1,2,
S. Lee1,2, R. Shidachi1,2,
T. Sekitani1,2,3 and T.
Someya1,2, 1Univ. of Tokyo,
2
JST-ERATO and 3Osaka
Univ. (Japan)- 40 -

1F 107b

1F 108aWednesday, September 30
2F 201

2F Small Hall

2F 204

H-7: Quantum Devices(10:45-12:30)
Chairs: A. Oiwa
(Osaka Univ.)
T. Nakaoka(Sophia Univ.)

K-7: Characterization II(10:45-12:05)
Chairs: N. Sugii (Hitachi)
T.-S. Chao (NCTU)

M-7: III-V Materials &Devices(10:45-12:30)
Chairs: N. Hara
(Fujitsu Labs.)
T. Suzuki (JAIST)

O-7: ReRAM 2(10:45-12:05)
Chairs: K. Kinoshita(Tottori Univ.)
H. Hwang(POSTECH)

10:45 H-7-1
Determination of Phonon
Decay-rate in p-type Si
under Fano Resonanceby Measurements of
Coherent Phonons with
Femto-second Laser
PulsesK. Kato, K. Oguri, H.
Sanada, T. Tawara, T.
Sogawa and H. Gotoh,
NTT BRL (Japan)

10:45 K-7-1
Reliability of Improved
CAAC-IGZO FETSatisfying NOSRAM
Performance
T. Murakawa, K. Ohshima,
M. Tsubuku, D. Shimada,N. Kamata, T. Tanaka, A.
Shimomura, M. Sakakura,
Y. Yamamoto and S.
Yamazaki, Semiconductor
Energy Lab. Co. Ltd.
(Japan)10:45 M-7-1 (Invited)THz Devices Based on 2D
Electron Systems
H.G. Xing, R. Yan, B. Song,J. Encomendero and D.
Jena, Cornell Univ. (USA)10:45 O-7-1
Low Power Switching of
Si-doped Ta2O5 ReRAM
for High Density Memory
Application
B.Y. Kim, K.J. Lee, S.O.
Chung, S.G. Kim and
H.S. Kim, SK Hynix Inc.
(Korea)11:00 H-7-2
Dynamic creation of a
topologically-ordered
Hamiltonian using spinpulse control in the
Heisenberg model
T. Tanamoto1, K. Ono2,
Y.X. Liu2,3 and F. Nori2,4,
1
Toshiba Corp., 2 RIKEN, 3
Tsinghua Univ. and 4Univ.
of Michigan (Japan)

11:05 K-7-2
Degradation
Investigation ofHigh-k/Metal GatenMOSFETs by 3D KMCwith Multiple Traps
Interactions
Y. Li, H. Jiang, Z.Y. Lun,
Y.J. Wang, P. Huang, H.
Hao, G. Du, X. Zhang
and X.Y. Liu, Peking Univ.
(China)11:15 M-7-2
Electrical Characteristicsof Au/Ni Schottky Diodes
on Cleaved m-Plane
Surfaces of Free-Standing
n-GaN Substrates
M. Naganawa1, T. Aoki1, T.
Mishima2 and K. Shiojima1,
1
Univ. of Fukui and 2Hosei
Univ. (Japan)

11:05 O-7-2
Interface Engineered
HfO2-Based 3D Vertical
Resistive Random Access
Memory with FormingFree Operation
B. Hudec1, I.T. Wang1,
W.L. Lai1, C.C. Zhang1,
T.H. Hou1, P. Jancovic2,
K. Frohlich2, M. Micusik2
and M. Omastova2, 1NCTU
and 2Slovak Academy of
Sciences (Taiwan)

11:15 H-7-3 (Late News)
Withdrawn

11:25 K-7-3
Estimation of Soft Error
Tolerance According to
the Thickness of Buried
Oxide and Body Bias 28nm and 65-nm in FD-SOI
Processes by a MonteCarlo Simulation
K. Zhang, J. Yamaguchi,
S. Kanda, J. Furuta and K.
Kobayashi, Kyoto Inst. of
Tech. (Japan)

11:30 M-7-3
Net Acceptor TypeTrap Density in Semiinsulating GaN Layers
T. Tanaka, N. Ito, M.
Akutsu, K. Chikamatsu, S.
Takado and K. Nakahara,
ROHM Co., Ltd. (Japan)

11:25 O-7-3
Investigation of Carbon
Nanotube Memory
Cell Array Program
Characteristics
S.Y. Ning1, T.O. Iwasaki1,
E. Yanagizawa1, S.
Hachiya1, G. Rosendale2,
M. Manning2, D. Viviani2,
T. Rueckes2 and K.
Takeuchi1, 1Chuo Univ. and2
Nantero Inc. (Japan)

11:30 H-7-4
Controlled Photon
Emission of Colloidal
PbS Quantum Dot byUsing Photonic Dot Madeof Optical Polymer andSiliconT. Nozaka and K. Mukai,
Yokohama National Univ.
(Japan)

11:45 K-7-4
Impact of Hole Shape on
Program Vt Distribution
in Gate-All-Around 3D
Flash Memory
C.H. Cheng, C.W. Lee,
K.W. Wu, S.H. Ku, N.K.
Zous, L. Liu, S.W. Huang,
Y.W. Chang, I.J. Huang,
A. Suzuki, T.C. Lu, W.P. Lu
and K.C. Chen, Macronix
Int'l. Co. Ltd. (Taiwan)

11:45 M-7-4
GaAs/In0.2Ga0.8As FinArray-Esaki Tunnel
Diodes Fabricated on(001) Silicon by Aspect
Ratio Trapping
Q. Li, Y. Han and K.M.
Lau, HKUST (China)

11:45 O-7-4
A 1.0 V Operation, 65%
Faster Set/Reset Voltage(3V) Generator for
3D-integrated ReRAM
and NAND Flash Hybrid
Solid-State Drive
M. Tanaka, S. Hachiya,
T. Ishii, S.Y. Ning and
K. Takeuchi, Chuo Univ.
(Japan)

11:45 H-7-5 (Late News)
Characterization and
Topological Properties of
Bi2Se3 Thin Film Grown
by using Physical Vapor
Deposition
Y.C. Lin, Y.S. Chen, C.C.
Lee, J.K. Wu, H.Y. Lee
and Y.H. Chang, National
Taiwan Univ. (Taiwan)

2F 202

12:00 M-7-5
The Effects of AlN
Passivation Layer toMetal Work-Function
and Band Alignmentof Metal Oxide
Semiconductor Devices
H.B. Do, Q.H. Luc, M.T.H.
Ha, S.H. Huynh, Y.C. Lin
and E.Y. Chang, NCTU
(Taiwan)- 41 -

2F 206

2F 207

1F 108b

Wednesday, September 30
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

A-7: III-V Devices andRelated Technologies

C-7: Crystalline Silicon
Photovoltaics

D-7: Nanowire Synthesis
and Properties II

F-7: Biosensors

G-7: Organic Devices II

12:00 A-7-6
Fabrication of Two-Color
Surface Emitting Deviceof a Coupled Cavity
Structure with InAs
QDs Formed by WaferBonding
H. Ota, C. Harayama, T.
Maekawa, X.M. Lu, N.
Kumagai, T. Kitada and
T. Isu, Tokushima Univ.
(Japan)

12:00 C-7-6
Activation of Silicon
Implanted with
Phosphorus and Boron
Atoms by Microwave
Rapid Annealing
S. Kimura, M. Hasumi, K.
Ota and T. Sameshima,
Tokyo Univ. of Agri. &Tech. (Japan)

12:15 D-7-6
X-ray Diffraction Studyof Evolution of Polytypes
in Au-assisted GaAs
Nanowires
M. Takahasi1,2, M. Kozu1,2
and T. Sasaki1, 1JAEA and2
Univ. of Hyogo (Japan)

12:15 F-7-6
Monitoring ofHydroxyapatite Crystal
Formation using Field
Effect Transistor
T. Kajisa1 and T. Sakata2,
1
PROVIGATE Inc. and2
Univ. of Tokyo (Japan)

12:15 G-7-6 (Invited)
Organic-Assisted
Oriented Attachment ofSilver Nanosheets
S. Ekgasit and P.
Jangtawee, Chulalongkorn
Univ. (Thailand)

12:15 A-7-7
Demonstration of TwoWavelength Lasing ina GaAsP Ring/FabryPerot Composite Cavity
Semiconductor Laser
A.K. Saha and T. Suhara,
Osaka Univ. (Japan)

12:15 C-7-7
Combination
Accelerating Test
for Crystalline Si
Photovoltaic Modules
A. Masuda1, C. Yamamoto1,
N. Uchiyama1, K. Ueno2
and T. Yamazaki2, 1AIST
and 2Choshu Industry Co.,
Ltd. (Japan)- 42 -

1F 107a1F 107b

1F 108aWednesday, September 30
2F 201

2F 202

2F Small Hall

2F 204

H-7: Quantum Devices

M-7: III-V Materials &Devices

12:00 H-7-6 (Invited)
Ultraclean Carbon
Nanotube Quantum
Dots Coupled toSuperconducting
Impedance Matching
Circuits
M. Jung1, T. Hasler1,
V. Ranjan1, G. Puebla
Hellmann1,2, A. Wallraff2
and C. Schonenberger1,
1
Univ. of Basel and 2ETH
Zurich (Switzerland)

12:15 M-7-6
Withdrawn- 43 -

2F 206

2F 207

1F 108b