Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-3: Optical
Interconnection(9:00-10:45)
Chairs: H. Fukuda (NTT)S. Itabashi(NTT-AT)

C-3: Thin-film
Photovoltaics(9:00-10:30)
Chairs: K. Ohdaira(JAIST)
T. Negami(Panasonic)

D-3: Nanocarbon-based
Devices(9:00-10:30)
Chairs: T. Kawai (NEC)K. Maehashi(Tokyo Univ. ofAgri. & Tech.)F-3: Microfluidics(9:00-10:45)
Chairs: J. Ohta (NAIST)
C.-H. Liu (National
Tsing Hua Univ.)

G-3: Dots and Nonstructures(9:00-10:45)
Chairs: T. Iwai
(Fujitsu Labs.)
T. Nagata (NIMS)

9:00 A-3-1 (Invited)
High-Density Optical
Interconnection Based on
Silicon Photonics
Y. Tanaka, S. Sekiguchi and
K. Morito, PETRA (Japan)

9:00 C-3-1 (Invited)Thin-Film Solar Cells
Based on Liquid Phase
Crystallized Silicon on
Glass
D Amkreutz1, J Haschke2,
S Kuehnapfel1, P. Sonntag1
and B Rech1, 1HelmholtzZentrum Berlin fuer
Materialien und EnergieGmbH and 2Ecole
Polytechnique Federale deLausanne (Germany)

9:00 D-3-1
Development of Highly
Sensitive Tactile Sensor
using Multi-Walled
Carbon Nanotube Arrays
K. Suzuki, T. Nozaki and
H. Miura, Tohoku Univ.
(Japan)9:00 F-3-1 (Invited)
Label-Free Integrated
Plasmonic Biosensors
for Cytokine
Immunodiagnostics
M.T. Chung, P. Chen, B.R.
Oh and K. Kurabayashi,
Univ. of Michigan (USA)

9:00 G-3-1
High-density Selfassembled Quantum Dots
of InGaAs for Ultrafast
and Efficient Spin
Injection
J. Takayama1, T. Kiba2,
T. Yamamura1, D.
Yamazaki1, S. Chen1 andA. Murayama1, 1Hokkaido
Univ. and 2Kitami Inst. of
Tech. (Japan)

9:30 A-3-2
High-Performance MOS
Capacitor Type Si Optical
Modulator, and Surface
Illumination-type Ge
Photodetector for Optical
Interconnection
J. Fujikata1, S. Takahashi1,
M. Takahashi2, M.
Noguchi1, M. Miura1,
T. Nakamura1 and Y.
Arakawa3, 1PETRA, 2
AIST and 3Univ. of Tokyo(Japan)9:30 C-3-2
Development of
Nearly Crystallized
P-type HydrogenatedAmorphous Silicon
Oxide as Window Layerin a-Si:H Single-junction
and a-Si:H/a-Si1-X Gex:H
Tandem Solar cells
P.L. Chen, W.H. Tu, C.H.
Hsu and C.C. Tsai, NCTU
(Taiwan)

9:15 D-3-2
Micro-Supercapacitorswith Carbon Nanotubes
and Flexible Components
F. Tanaka1, A. Sekiguchi2,
K.U. Laszczyk1, K.
Kobashi2, S. Sakurai2, D.N.
Futaba2, T. Yamada2 andK. Hata2, 1TASC and 2AIST(Japan)9:30 F-3-2 (Invited)
Molecular Analysis in
Biological Samples by
Actuator-Integrated
Microfluidic Chips
Y. Takamura1,2, 1JAIST and
2
JST-CREST (Japan)

9:15 G-3-2 (Late News)
Fabrication andMagnetic Properties of
Co-doped La0.5Sr0.5TiO3Nanofibers
S. Maensiri1, W. Ponhan2
and V. Amornkitbamrung2,
1
Suranaree Univ. of Tech.
and 2Khon Kaen Univ.
(Thailand)

9:45 A-3-3
Ultra-Compact 100Gb/s
Coherent Receiver
Monolithically Integrated
on Silicon
Z. Tu, P. Gong, Z. Zhou
and X. Wang, Peking Univ.
(China)9:45 C-3-3 (Invited)
Development of CTSBased Thin Film Solar
Cells
H. Araki1, A. Kanai1, A.
Takeuchi1, K. Jimbo1 and
H. Katagiri1, Nat. Inst.
of Tech., Nagaoka Coll.
(Japan)9:30 D-3-3
Wafer–Scale Statistical
Characterization of
Carbon Nanotube Thin–
Film Transistors
J. Hirotani, S. Kishimoto
and Y. Ohno, Nagoya Univ.
(Japan)

10:00 F-3-3
Detection of AmyloidBeta Proteins during
Fibrillization Process by
Liposome-Immobilized
Microcantilevers in
Microfluidic Channel
M. Sohgawa1, Z. Zhang2,
Y. Abe1, T. Abe1, K.
Yamashita2 and M. Noda2,
1
Niigata Univ. and 2Kyoto
Inst. of Tech. (Japan)

9:30 G-3-3
Characteristics of Highly
Stacked InAs Quantumdot Laser Grown
on Vicinal (001)InP
Substrate
K. Akahane1, N.
Yamamoto1, T. Umezawa1,
A. Matsumoto1 and T.
Kawanishi1,2, 1NICT and
2
Waseda Univ. (Japan)

10:00 A-3-4
Suppression of Void
Generation in Direct
Wafer Bonding for Si
High-k MOS Optical
Modulators using Al2O3/
HfO2 Bonding Interface
J.H. Han1, 2, M. Takenaka1,
2
and S. Takagi1, 2, 1Univ.
of Tokyo and 2JST-CREST(Japan)

10:15 C-3-4
Crystallographic and
Optical Properties,
and Band-diagramsof CuInSe2, CuIn3Se5,
and CuIn5Se8 Phases in
Cu-poor Cu2Se-in2Se3
Pseudo-binary System
T. Maeda, W. Gong andT. Wada, Ryukoku Univ.
(Japan)9:45 D-3-4
PMMA Dry Transfer ofGraphene on h-BN using
Heating/Cooling System
T. Uwanno1, K. Watanabe2,
T. Taniguchi2 and K.
Nagashio1,3, 1Univ. ofTokyo, 2 NIMS and 3JSTPRESTO (Japan)

10:15 F-3-4
A Microfluidic Labchip
For Angiogenesis Studies
Using Multi-Gradients
Generator and Cell
Trapping Structures
C.H. Liu1, C.H. Chin1,
Y.L. Chiu1 and K.Y. Lee2,
1
National Tsing Hua Univ.
and 2Shuang Ho Hospital(Taiwan)

9:45 G-3-4
Selective Epitaxy of Ge
on Nano-tip Patterned Si(001): Towards Defectfree Ge Islands
G. Niu1, G. Capellini1,2,
T. Niermann3, M.
Salvalaglio4, A.
Marzegalli4, M.A.
Schubert1, P. Zaumseil1,
H.M. Krause1, O.
Skibitzki1, M. Lehmann3,
F. Montalenti4, Y.H. Xie5
and T. Schroeder1,6, 1IHP,
2Univ. Roma Tre, 3 TU
Berlin, 4 Univ. degli Studi
di Milano-Bicocca, 5 UCLA
and 6BTU (Germany)

10:00 D-3-5
Fluorinated Graphene
as Passivation Layer ofGraphene Field EffectTransistor
Y.P. Ho, K.I. Ho, B. Liu
and C.S. Lai, Chang Gung
Univ. (Taiwan)

10:30 F-3-5 (Late News)An Integrated Onechip-sensor System for
MiRNA Quantitative
Analysis Based on Digital
Droplet PCR
M. Tsukuda1, R.S.
Wiederkehr3, Q. Cai3,
B. Majeed3, P. Fiorini3,
T. Stakenborg3 and T.
Matsuno2, 1Panasonic
Corp. Advanced ResearchLab., 2 Panasonic Corp.
AIS Company and 3IMEC
vzw (Japan)

10:00 G-3-5
Miniband Formulationin Ge/Si Quantum Dot
Array
Y.C. Tsai1, M.Y. Lee1, Y.
Li1 and S. Samukawa2,
1
NCTU and 2Tohoku Univ.
(Taiwan)

10:15 A-3-5
Monolithically Integrated
Quantum Dot Optical
Modulator with
Semiconductor Optical
Amplifier for T-Band
Optical Communication
N. Yamamoto1, K.
Akahane1, T. Umezawa1,
A. Matsumoto1 and T.
Kawanishi1,2, 1NICT and
2
Waseda Univ. (Japan)- 20 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108b

H-3: Novel Functional
Devices(9:00-10:45)
Chairs: T. Machida(Univ. of Tokyo)
T. Ota (NTT BRL)

K-3: Characterization I(9:00-10:30)
Chairs: K. Maekawa(Renesas Electronics)
N. Planes(STMicroelectronics)

M-3: SiC &GaN Power Devices(9:00-10:30)
Chairs: H. Umezawa(AIST)
R. Hattori(Mitsubishi
Electric)

N-3: Advanced Process
and Characterization(9:00-10:30)
Chairs: T. Nakayama(Chiba Univ.)
S. Migita (AIST)

O-3: ReRAM 1(9:00-10:50)
Chairs: M.-H. Lee(Macronix)
K. Yamamoto(Toshiba)

P-3: Semiconductor andRF Spintronics(9:00-10:45)
Chairs: J. Nitta(Tohoku Univ.)
Y. Saito (Toshiba)

9:00 H-3-1 (Invited)
Gigahertz SingleElectron Pump Towards
a Representation of the
New Ampere
A. Fujiwara, G. Yamahata
and K. Nishiguchi, NTT
BRL (Japan)

9:00 K-3-1 (Invited)
Impacts of RDF, RTN,
and Shot Noise on
Nanowire Transistor
Performance Studied byEnsemble Monte Carlo/ Molecular Dynamics
Simulation
T. Watanabe, Waseda Univ.
(Japan)9:00 M-3-1 (Invited)
SiC Power Electronics- Current and Future
Prospects of SiC Devices
P. Friedrichs, Infineon AG(Germany)

9:00 N-3-1 (Invited)High Performance PolyGe p- and nMOSFETs
Fabricated by Flash
Lamp Annealing
K. Usuda1,2, Y. Kamata1,2,
Y. Kamimuta1,2, M. Koike1,2,
T. Mori2,3, T. Maeda2,3
and T. Tezuka1,2, 1Toshiba
Corp., 2 GNC-AIST and
3
AIST (Japan)

9:00 O-3-1 (Invited)
TMO-ReRAM Based
Synaptic Device
for Neuromorphic
Computing
J.F. Kang, B. Gao, Z. Chen,
P. Huang, Y.D. Zhao, L.F.
Liu and X.Y. Liu, Peking
Univ. (China)

9:00 P-3-1 (Invited)
Graphene as a Versatile
Spin Tunnel Barrier
E. Cobas, US Naval Res.
Lab. (USA)9:30 H-3-2
Formation of Coupled
Triple Silicon Quantum
Dot with a Compact
Device Structure
T. Uchida1, A. Fukuchi1, M.
Arita1, A. Fujiwara2 andY. Takahashi1, 1Hokkaido
Univ. and 2NTT BRL(Japan)9:30 K-3-2
Effect of 3D Current
Distribution in the
Characterizing Parasitic
Resistance of FinFETs
P.Y. Lin1, Y.L. Chiu1, F.H.
Meng1, K.H. Chen2, S.
Hao2, B.Z. Tien2, T.S.
Chang2, C.J. Lin1 and Y.C.
King1, 1National Tsing Hua
Univ. and 2TSMC (Taiwan)

9:30 M-3-2
Development of Novel
1200V-Class 4H-SiC
Implantation andEpitaxial Trench
MOSFETs with Low OnresistanceH. Shiomi, H. Kitai, H.
Tamaso and K. Fukuda,
AIST (Japan)

9:30 N-3-2
Direct Evidence of Freecarrier Induced Bandgap Narrowing in Ge
S. Kabuyanagi, T.
Nishimura, T. Yajimia andA. Toriumi, Univ. of Tokyo(Japan)9:30 O-3-2
Microstructural Change
in Cu/WOx/TiN during
Resistive Switching
M. Arita, A. Takahashi,
Y. Ohno, A. Nakane, A.
Tsurumaki Fukuchi and Y.
Takahashi, Hokkaido Univ.
(Japan)9:30 P-3-2
Suppression of
Spin Transport in
Ferromagnet/Oxide/
Semiconductor Junctions
by Inserting Magnetic
Impurities
A. Spiesser, H. Saito, S.
Yuasa and R. Jansen, AIST
(Japan)9:45 H-3-3
Solid-State Operationof Mott Transistors with
Ultra-Thin VO2 Channels
T. Yajima1,2, T. Nishimura1,2
and A. Toriumi1,2, 1Univ.
of Tokyo and 2JST-CREST(Japan)9:50 K-3-3
Quantitative
Understanding of
Scanning Spreading
Resistance Microscopy
with Schottky Contact
Model
S. Itai, L. Zhang, K.
Matsuzawa, M. Ono and
T. Ishihara, Toshiba Corp.
(Japan)9:45 M-3-3
A High Current
Operation in a 1.6 kV
GaN-based Trenched
Junction Barrier
Schottky (JBS) DiodeR. Kajitani, H. Handa,
S. Ujita, D. Shibata,K. Tanaka, M. Ogawa,H. Ishida, S. Tamura,
M. Ishida and T. Ueda,
Panasonic Corp. (Japan)

9:50 N-3-3
Incorporated Nitrogen
Behavior in Plasmanitrided Silicon Oxides
Formed by Chemical
Vapor Deposition Method
N. Shinoda, H. Itokawa,
R. Fujitsuka, K. Sekine,
S. Onoue and J. Tonotani,
Toshiba Corp. (Japan)

9:50 O-3-3
Defect Properties andMaterials Selection for
Oxide RRAM
J. Robertson and Y. Guo,
Cambridge Univ. (UK)

9:45 P-3-3
Phonon-Assisted Efficient
Spin Injection in InGaAs
Quantum Well-Quantum
Dot Tunnel-Coupled
Structures
S.L. Chen1, T. Kiba2,
J. Takayama1 and A.
Murayama1, 1Hokkaido
Univ. and 2Kitami Inst. of
Tech. (Japan)

10:00 H-3-4
Experimental
Demonstration andModeling of GeTe6
Oscillators and Threshold
Switches for Emerging
Architectures andMemoryA.A. Sharma, Y.E. Kesim,
J.A. Bain, M. Skowronski
and J.A. Weldon, Carnegie
Mellon Univ. (USA)10:10 K-3-4
Assessment of GIDLReduction and Vth
Modulation with Plasma
Doped FinFETs
J.M. Lee1,2, K.H. Cho2,
H.J. Bae2, D.W. Kim2,
S. Paak2 and I. Chung1,
1
Sungkyunkwan Univ. and2
Samsung Electronics Co.
Ltd. (Korea)

10:00 M-3-4
Investigationof Breakdown
Characteristics in Highvoltage GaN-HEMTs
T. Suwa, W. Saito, T.
Uchihara, T. Naka and T.
Kobayashi, Toshiba Corp.
(Japan)10:10 N-3-4
Comprehensive
Understanding of SiO2-IL
Scavenging in HfO2/SiO2/
Si Stack
X. Li, T. Yajima, T.
Nishimura and A. Toriumi,
Univ. of Tokyo (Japan)

10:10 O-3-4
Reproducing Resistive
Switching Effect by Soretand Fick Diffusion in
Resistive Random Access
Memory (ReRAM)
K. Kinoshita1,2, R. Koishi1,
T. Moriyama1,2, K.
Kawano1, H. Miyashita1,2,
S.S. Lee1,2 and S. Kishida1,2,
1
Tottori Univ. and 2Tottori
Integrated Frontier Res.
Center (Japan)

10:00 P-3-4
Magnetic Properties andIntrinsic Ferromagnetismin Narrow-gap
Ferromagnetic
Semiconductor (Ga,Fe)
Sb
N.T. Tu1, P.N. Hai2, L.D.
Anh1 and M. Tanaka1,
1
Univ. of Tokyo and 2Tokyo
Tech (Japan)

10:30 O-3-5
A Study of Array
Resistance Distribution
and a Novel Operation
Algorithm for WOx
ReRAM Memory
K.C. Hsu, F.M. Lee, Y.Y.
Lin, E.K. Lai, J.Y. Wu, D.Y.
Lee, M.H. Lee, H.L. Lung,
K.Y. Hsieh and C.Y. Lu,
Macronix Int'l. Corp., Ltd.
(Taiwan)

10:15 P-3-5
Millimeter-Wave
Detector Using Magnetic
Tunnel Junctions
With Perpendicularly
Magnetized L10-Ordered
FePd Free Layer
K. Mukaiyama1, H.
Naganuma1, T. Yu1, H.
Kubota2, A. Fukushima2,
M. Oogane1 and Y. Ando1,
1
Tohoku Univ. and 2AIST(Japan)

10:15 H-3-5
Novel Field Emission
Emitters with Nanoscale
Tips Based on Mo
Oxide Fabricated byElectrochemical Methods
T. Tsukamoto, T. Sato, S.
Kitamura, O. Kubota, A.
Kitao, E. Ozaki and T.
Motoi, Canon INC. (Japan)

10:15 M-3-5
A Robust 600V GaN
HEMT Technology on
GaN-on-Si with 400V,
5μsec Load-Short-Circuit
Withstand Capability
H. Ichijoh1, T. Nagahisa1,
M. Kubo1 and A.O.
Adan2, 1Sharp Corp. and2Consultant (Japan)- 21 -

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-3: Optical
Interconnection

D-3: Nanocarbon-based
DevicesG-3: Dots and Nonstructures

10:30 A-3-6
MEMS Optical
Switches Using Slot
Ring Resonator for Low
Voltage Operation
Y. Amemiya, K. Noda, T.
Sennichi and S. Yokoyam,
Hiroshima Univ. (Japan)

10:15 D-3-6 (Late News)
Direct Evidence ofDefect-defect Correlationin Atomically Thin
MoS2 Layer by Random
Telegraphic Signals
Observed in Back-gatedFETs
N. Fang, K. Nagashio and
A. Toriumi, Univ. of Tokyo(Japan)

10:15 G-3-6
Formation andCharacterization of HighDensity FePt Nanodots on
SiO2 Induced by Remote
Hydrogen
K. Makihara, Y. Kabeya,
A. Ohta, T. Kato, A. Iwata
and S. Miyazaki, Nagoya
Univ. (Japan)

10:30 G-3-7
In Situ TEM Observationof Dynamic Behaviorof Metal-Based
Nanoparticles in Ionic
LiquidK. Kogure, J. Ishioka, K.
Ofuji, R. Mirza, S. Yatsu,
T. Shibayama and S.
Watanabe, Hokkaido Univ.
(Japan)- 22 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

1F 108b

H-3: Novel Functional
DevicesP-3: Semiconductor andRF Spintronics

10:30 H-3-6
STDP Behavior
Realization in BiFeO3based Artificial Synapses
with Short and Simplified
Spike Sequences
N. Du1, C. Mayr2, T. You1,
D. Buerger1, I. Skorupa1,3,
M. Di Ventra4, O.G.
Schmidt1,5 and H. Schmidt1,
1
TU Chemnitz, 2 Univ. of
Zurich and ETH Zurich,
3Helmholtz-Zentrum
Dresden-Rossendorf, 4
UCSD and 5IFW Dresden(Germany)

10:30 P-3-6
Generation of Highly
Stable Microwave from a
Spin Torque Oscillator by
Phase Locked Loop
S. Tamaru, H. Kubota, K.
Yakushiji, S. Yuasa and A.
Fukushima, AIST (Japan)- 23 -

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-4: Group-IV Optical
Devices I(15:40-16:55)
Chairs: S. Saito(Univ. ofSouthampton)
Y. Ishikawa(Univ. of Tokyo)

B-4: 2D Materials I(15:40-16:55)
Chairs: T. Machida(Univ. of Tokyo)
K. Terabe (NIMS)

C-4: Organic Devices I(15:40-17:10)
Chairs: T. Hayashi(NTT BRL)
H. Murata (JAIST)

D-4: Nanowire Devices & E-4: MEMS and Sensor
Characterization(15:40-16:55)(15:40-16:55)
Chairs: H. Kanaya
Chairs: G. Zhang(Kyushu Univ.)(NTT BRL)
M. Fujino
K. Kawaguchi(Univ. of Tokyo)(Univ. of Tokyo)

G-4: Growth ofGermanium-based
Semiconductors I(15:40-16:55)
Chairs: T. Suemasu(Univ. of Tsukuba)
N. Watanabe (NTT)

15:40 A-4-1 (Invited)
Ge/SiGe Quantum Well
Optical Modulator
D. Marris Morini1, V.
Vakarin1, P. Chaisakul1,2, J.
Frigerio3, M. Rouifed1, X.
Le Roux1, D. Chrastina3,
L. Vivien1 and G. Isella3,
1
Univ. Paris Sud / IEF, 2
Univ. of Tokyo and 3L-Ness,
Politecnico Di Milano(France)

15:40 B-4-1 (Invited)
Growth and Applicationsof Surface Oxides
on Two-Dimensional
Transition Metal
Dichalcogenides
M. Yamamoto, NIMS
(Japan)

15:40 C-4-1 (Invited)
Development of New
Soft Actuator using
Piezoelectric Polymer
Film
Y. Tajitsu, Kansai Univ.
(Japan)

15:40 D-4-1 (Invited)Template-Assisted
Selective Epitaxy(TASE) of III-V
Nanoscale Devices
for Heterogeneous
Integration with Si
H. Schmid, M. Borg, K.
Moselund, D. Cutaia andH. Riel, IBM Research Zurich (Switzerland)

15:40 E-4-1
Mechanical Properties of
Cu-Ni-Si alloy Evaluatedby Micro-Tensile Test for
Application in MEMS
S. Yanagida1,2, A. Araki1,
T.F.M. Chang1,2, C.Y.
Chen1,2, T. Nagoshi3, E.
Kobayashi1, H. Hosoda1,
T. Sato1 and M. Sone1,2,1Tokyo Tech, 2 JST-CREST
and 3AIST (Japan)

15:40 G-4-1 (Invited)
Crystal Growth of GeSnrelated Group-IV Thin
Films for Integratingon Si Nanoelectronics
Platform
S. Zaima1,2, O. Nakatsuka2,
T. Asano2,3, T. Yamaha2,3,
S. Ike2,3, A. Suzuki2, M.
Kurosawa1,2,4, W. Takeuchi2
and M. Sakashita2,
1
EcoTopia Sci. Inst.,
Nagoya Univ., 2 Grad. Sc.
Eng., Nagoya Univ., 3 JSPS
Reserach Fellow and 4Inst.
Adv. Res., Nagoya Univ.
(Japan)

16:10 A-4-2
Ge/graded-SiGe
Multiplication Layers
for Low-voltage andLow-noise Ge Avalanche
Photodiodes on Si
Y. Miyasaka1, T. Hiraki2,3,
K. Okazaki2,3, K. Takeda2,3,
T. Tsuchizawa2,3, K.
Yamada2,3, K. Wada1 and Y.
Ishikawa1, 1Univ. of Tokyo,
2
NTT Device Tech. Labs.
and 3NTT Nanophotonics
Center (Japan)

16:10 B-4-2
Josephson Coupling in
NbSe2/NbSe2 Van Der
Waals Junction
R. Moriya1, N. Yabuki1,
M. Arai1, Y. Sata1, S.
Morikawa1, S. Masubuchi1
and T. Machida1,2, 1IIS,
Univ. of Tokyo and 2INQIE,
Univ. of Tokyo (Japan)

16:10 C-4-2
Controllable n- to p-type
Doping of MEH-PPV
Films by Evaporative
Spray Deposition using
Ultra-Dilute Solution
MethodN. Mizutani1, S. Sakiyama2
and K. Fujita1,2, 1IMCE,
Kyushu Univ. and 2IGSES
Kyushu Univ. (Japan)

16:10 D-4-2
Highly Tunable Multiple
Quantum Dots Made in
InAs Nanowires by Local
Finger Gates
J. Wang1, S. Huang1, D.
Pan2, J. Zhao2 and H.Q.
Xu1,3, 1Peking Univ., 2 CAS
and 3Lund Univ. (China)

16:00 E-4-2
The CeO2 Sensing
Membrane with NH3
Plasma Treatment in
Biosensor Applications
C.F. Lin, C.H. Kao, S.W.
Chang, C.W. Chang, C.L.
Chang, Y.L. Su and Y.X.
Huang, Chang Gung Univ.
(Taiwan)

16:10 G-4-2
Sn-doped Al-induced
Layer Exchange forLarge-grained GeSn Thin
Films on Insulators
N. Oya, K. Toko and T.
Suemasu, Univ. of Tsukuba(Japan)

16:25 A-4-3
Low Dark Current Ge
Photodetector with
Selectively Grown Si
Capping Layer
S. Okumura, K. Kinoshita,
J. Fujikata, T. Simoyama,
H. Ono, Y. Tanaka, K.
Morito, T. Horikawa and T.
Mogami, PETRA (Japan)

16:25 B-4-3
In Situ and Nonvolatile
Tuning of Sp2/Sp3
Fraction in Graphene
Oxide For All-Solid-State
Multifunctional Devices
T. Tsuchiya, T. Tsuruoka,
K. Terabe and M. Aono,
NIMS (Japan)

16:25 C-4-3
Study of Discharging
Process of Double Layer
Organic Diodes Using
Displacement Current
Measurement Coupledwith Electric-FieldInduced Optical SecondHarmonic Generation
Measurement
T. Noma, D. Taguchi, T.
Manaka and M. Iwamoto,
Tokyo Tech (Japan)

16:25 D-4-3
Growth andCharacterization of
Vertical Nanocavity
Using Core-multishell
Nanowires
T. Wada, S. Hara and J.
Motohisa, Hokkaido Univ.
(Japan)

16:20 E-4-3
Reliability Results of
4 million Micro Bump
Interconnections of
3D Stacked 16 M Pixel
Image Sensor
Y. Takemoto, N. Takazawa,
M. Tsukimura, H. Saito, T.
Kondo, H. Kato, J. Aoki,
K. Kobayashi, S. Suzuki,
Y. Gomi, S. Matsuda and
Y. Tadaki, Olympus Corp.
(Japan)

16:25 G-4-3
Low-Temperature( 〜 150℃ ) SolidPhase Epitaxy of
a-GeSn/c-Ge for High
Non-Equilibrium
Substitutional SnConcentration GeSn
T. Sadoh, A. Ooato, J. Parkand M. Miyao, Kyushu
Univ. (Japan)

16:40 A-4-4
Influences of Metal/Ge
Contact and Surface
Passivation on Light
Emission and Detection
for Asymmetric Metal/
Ge/Metal Diodes
T. Maekura, D. Wang,
K. Yamamoto and H.
Nakashima, Kyushu Univ.
(Japan)

16:40 B-4-4
N-type Doping Effect ofTransferred MoS2 andWSe2 Monolayer
C.P. Lin1, P.S. Liu1, L.S.
Lyu1, M.Y. Li2, C.C.
Cheng1, T.H. Lee1, W.H.
Chang1, L.J. Li3 and T.H.
Hou1, 1NCTU, 2 Academia
Sinica and 3KAUST(Taiwan)

16:40 C-4-4
Realizing Mechanically
Robust ITO and
PEDOT:PSS by Reducing
Substrate Thickness to asThin as 1.4 μm
S. Harimurti1, N.
Matsuhisa1, P. Zalar1,2, T.
Yokota1,2 and T. Someya1,2,
1
Univ. of Tokyo and 2JSTERATO (Japan)

16:40 D-4-4
Study of Heat Conductionin Corrugated Si
Nanowires Using Raman
Mapping
V. Poborchii1, Y. Morita1,
J. Hattori1, T. Tada1 and
P. Geshev2, 1AIST and
2Inst. of Thermophysics of
the Russian Academy of
Sciences (Japan)

16:40 E-4-4 (Late News)
Robustness of Integrated
Stoppers for MEMS
Accelerometer
Fabricated by Multilayered Metal Technology
D. Yamane1,4, T. Konishi2,
M. Takayasu1,4, T. Safu2,
H. Toshiyoshi3,4, M.
Sone1,4, K. Masu1,4 and K.
Machida1,2,4, 1Tokyo Tech,
2
NTT Adv. Tech. Corp., 3
Univ. of Tokyo and 4JSTCREST (Japan)

16:40 G-4-4
Influence of Precursor
Gas on SiGe Epitaxial
Material Quality inTerms of Structural andElectrical Defects
S. Ike1,2,3, E. Simoen3, Y.
Shimura3,4,5, A. Hikavyy3,
W. Vandervorst3,4, R.
Loo3, W. Takeuchi1,
O. Nakatsuka1 and S.
Zaima1,6, 1Nagoya Univ.,
2
JSPS Research Fellow,
3
IMEC, 4 KU Leuven, 5
FWO Pegasus Marie Curie
Fellow and 6EcoTopia
Sci. Inst., Nagoya Univ.
(Japan)- 24 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

K-4: CMOS(15:40-16:50)
Chairs: Y. Fukuzaki(SONY)
K. Sukegawa(SOCIONEXT)

M-4: GaN Power Devices(15:40-16:55)
Chairs: T. Tanaka(Panasonic)
T. Uesugi(Toyota Central
R&D Labs.)

N-4: Interface andMaterial Science(15:40-17:00)
Chairs: S. Yoshida (SONY)
K. Kakushima(Tokyo Tech)

O-4: Advanced
Processing Circuits with
Functional Materials(15:40-17:10)
Chairs: R. Kuroda(Tohoku Univ.)
K. Ito(Tohoku Univ.)

15:40 K-4-1 (Invited)High Performance 14nm
SOI FinFET Technology
C.-H. Lin, IBM T.J. Watson
Research Center (USA)

15:40 M-4-1 (Invited)
Vertical Power Electronic
Devices based on
Bulk Gallium Nitride
Substrates
I.C. Kizilyalli and O.
Aktas, Avogy Inc. (USA)

15:40 N-4-1
Beyond GeO2 on Ge:
Network Modificationof GeO2 for Reliable Ge
Gate Stacks
C. Lu, C.H. Lee, T.
Nishimura and A. Toriumi,
Univ. of Tokyo (Japan)

15:40 O-4-1 (Invited)
Spintronics Memory
Devices for Ultralowpower and Highperformance Integrated
Circuits
S. Fukami, H. Sato and
H. Ohno, Tohoku Univ.
(Japan)

16:10 K-4-2
Stacked-Nanowire and
FinFET Transistors:
Guidelines for the 7nm
Node
L. Gaben1, S. Barraud2,
M.A. Jaud2, S. Martinie2,
O. Rozeau2, J. Lacord2,
G. Hiblot1, S. Monfray1,
F. Boeuf1, T. Skotnicki1, F.
Balestra3 and M. Vinet2,
1
STMicroelectronics, 2
CEA-LETI and 3IMEPLAHC (France)

16:10 M-4-2
Embedded Source
Field-Plate for Reduced
Parasitic Capacitance of
AlN/GaN MIS-HEMTs
on Si Substrate
K. Chikamatsu, M. Akutsu,
T. Tanaka, S. Takado, K.
Sakamoto, N. Ito and K.
Nakahara, ROHM Co.,
Ltd. (Japan)

16:00 N-4-2
Understanding on the
Impact of Interface
Reactions on Dipole
Strengths at MgO/SiO2
and Y2O3/SiO2 Interfaces
J. Fei and K. Kita, Univ. ofTokyo (Japan)

16:10 O-4-2
A 600-μW Ultra-LowPower Associative
Processor for Image
Pattern Recognition
Employing Magnetic
Tunnel Junction (MTJ)
Based Nonvolatile
Memories with NovelIntelligent Power-Gating(IPG) Scheme
Y. Ma, S. Miura, H. Honjo,
S. Ikeda, T. Hanyu, H.
Ohno, T. Shibata and
T. Endoh, Tohoku Univ.
(Japan)

16:30 K-4-3
W and CopperInterconnection Stability
for 3D VLSI CoolCube
Integration
C. Fenouillet Beranger1,
S. Kerdiles1, F. Deprat1,3,
P. Batude1, M.P. Samson2,1,
B. Previtali1, N. Rambal1,2,
V. Lapras1,2, L. Emery2,
C. Euvrard Colnat1, A.
Seignard1,2, P. Besson2,1, R.
Kachtouli1, A. Roman2,1,
C. Ribiere1, V. Lu2,1, L.
Brunet1, E. Gourvest2,
G. Druais2, Y. Loquet2,
L. Arnaud1, Y. Le Friec2,O. Pollet1, V. Benevent1,
F. Aussenac1, H. Denis1,
V. Jousseaume1, S.
Maitrejean1 and M.
Vinet1, 1CEA-LETI, 2
STMicroelectronics and3
IMEP-LAHC (France)

16:25 M-4-3
Analysis of GaN-HEMT
Switching Characteristics
for High-Power
Applications
T. Mizoguchi1, T. Naka1,
Y. Tanimoto2, Y. Okada2,
W. Saito1, M. Miura
Mattausch2 and H.J.
Mattausch2, 1Toshiba Corp.
and 2Hiroshima Univ.
(Japan)

16:20 N-4-3
Positive and Negative
Dipole Layer Formation
at High-k/SiO2 Interfaces
Simulated by ClassicalMolecular Dynamics
K. Shimura1, R. Kunugi1,
A. Ogura2,5, S. Satoh3,5,
J. Fei4, K. Kita4 and T.
Watanabe1,5, 1Waseda
Univ., 2 Meiji Univ., 3 Univ.
of Hyogo, 4 Univ. of Tokyoand 5JST-CREST (Japan)

16:30 O-4-3
180-mV Subthreshold
Operation of Crystalline
Oxide Semiconductor
FPGA Realizedby Overdriving
Programmable
Power Switch andProgrammable Routing
SwitchM. Kozuma1, Y. Okamoto1,
T. Nakagawa1, T. Aoki1,
Y. Kurokawa1, T. Ikeda1,
Y. Ieda1, N. Yamade1, H.
Miyairi1, M. Ikeda2, M.
Fujita2 and S. Yamazaki1,
1
Semiconductor Energy
Lab. Co., Ltd. and 2Univ.
of Tokyo (Japan)

16:40 M-4-4
Effect of Drain
Conductance in
Equivalent Circuit
Model for GaN GIT
Bidirectional Switch
T. Ide1, M. Shimizu1,
X.Q. Shen1, T. Morita2,
N. Otsuka2 and T. Ueda2,
1
AIST and 2Panasonic
Corp. (Japan)

16:40 N-4-4
Thermodynamic Knobfor High Performance
SiGe Gate Stack
Formation
C.T. Chang, T. Nishimura
and A. Toriumi, Univ. ofTokyo (Japan)

16:50 O-4-4
Area-Efficient Nonvolatile Carry Chain
Based on Pass-Transistor/
Atom-Switch Hybrid
Logic
X. Bai, Y. Tsuji, A.
Morioka, M. Miyamura,T. Sakamoto, M. Tada, N.
Banno, K. Okamoto, N.
Iguchi and H. Hada, NEC
Corp. (Japan)- 25 -

1F 108b

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

C-4: Organic Devices I
16:55 C-4-5
Enhanced Performancein Organic Light-emitting
Diode by Surface
Modification of ITO with
Graphene Oxide
D. Yamaguchi1, H. Sakai1and H. Murata1, JAIST(Japan)- 26 -

1F 107a1F 107b

1F 108aTuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204- 27 -

2F 206

2F 207

1F 108b

Tuesday, September 29
1F Middle-Sized 1F Middle-Sized
Hall A
Hall B

1F 101

1F 102

1F 107a1F 107b

1F 108aA-5: Group-IV Optical
Devices II(17:25-18:40)
Chairs: Y. Ishikawa(Univ. of Tokyo)
S. Saito(Univ. ofSouthampton)

B-5: 2D Materials II(17:25-18:40)
Chairs: H. Miyazaki(Toshiba)
S. Sato(Fujitsu Labs.)

C-5: New Concepts(17:25-18:25)
Chairs: H. Suzuki(Univ. of Miyazaki)
Y. Kurokawa(Nagoya Univ.)

F-5: Nano Devices for
Chemical & Biosensing(17:25-18:40)
Chairs: T. Sakata(Univ. of Tokyo)
H.-M. Chen
(NCTU)

G-5: Growth ofGermanium-based
Semiconductors II(17:25-18:40)
Chairs: A. Kikuchi(Sophia Univ.)
Y. Hotta(Univ. of Hyogo)

17:25 A-5-1
Tensile Strain ofGermanium Micro-Disks
on Freestanding SiO2
Beams
A. Alattili1, S. Kako2, M.
Husain1, F. Gardes1, S.
Iwamoto2, Y. Arakawa2
and S. Saito1, 1Univ. ofSouthampton and 2Univ. ofTokyo (UK)

17:25 B-5-1 (Invited)
Transport Studies in
Graphene and Black
Phosphorus Field EffectTransistors
B. Özyilmaz, NUS(Singapore)

17:25 C-5-1 (Invited)
A New Concept of Solar
Energy Harvesting
Using Solar-Pumped
Lasers Coupled with
Monochromatic
Photovoltaics
S. Mizuno1, K. Hasegawa1,
T. Ichikawa1 and H. Ito2,
1
Toyota CRDL, Inc. and2
Nagoya Univ. (Japan)

17:25 F-5-1 (Invited)
Acquiring Biological
Information ofIndividuals Using
Quantum Mechanics
M. Taniguchi, Osaka Univ.
(Japan)

17:25 G-5-1
High Quality GeSn Layer
Formation Due to Wellcontrolled Sn Migration
at High Temperature
N. Taoka1, G. Capellini1,2,
P. Zaumseil1, I. Costina1,
M.A. Schubert1 and T.
Schroeder1,3, 1IHP, 2 Univ.
Roma Tre and 3BTU
(Germany)

17:40 A-5-2
Suspended Ge Crossshaped Microstructures
for Enhancing Biaxial
Tensile Strain
S. Ishida1, S. Kako1, K.
Oda2, T. Ido2, S. Iwamoto1
and Y. Arakawa1, 1Univ.
of Tokyo and 2Hitachi Ltd.
(Japan)

17:55 B-5-2
Band-to-Band Graphene
Resonant Tunneling Field
Effect Transistor
S. Suzuki1, M.
Muruganathan1, S. Oda2and H. Mizuta1,3, 1JAIST, 2
Tokyo Tech and 3Univ. ofSouthampton (Japan)

17:55 C-5-2
Surface Passivation
Studies on Vertical
Junction Silicon
Microwire Solar Cells
Y.G. Ro1, R. Chen1 and S.A.
Dayeh1, Univ. of California
San Diego (USA)

17:55 F-5-2
Vertical Nano-Junction
Organic Diode as
Sensitive Sensing Array
M.Y. Chuang1, J.N. Chen2,
H.W. Zan1 and C.J. Lu3,
1
NCTU, 2 National Tsing
Hua Univ. and 3National
Taiwan Normal Univ.
(Taiwan)

17:40 G-5-2
Heavily Ga-doped
Germanium-Tin Alloys
by Molecular Beam
Epitaxy
W. Wang, V.R. D' Costa,
S.L. Lim, Q. Zhou, E.S.
Tok and Y.C. Yeo, NUS(Singapore)

17:55 A-5-3
Crystallinity
Improvement of Ge
Waveguides Fabricatedby Epitaxial Lateral
Overgrowth andChemical Mechanical
Polishing
K. Oda1, T. Okumura1,
J. Kasai1, S. Kako2, S.
Iwamoto2 and Y. Arakawa2,
1
Hitachi Ltd. and 2Univ. ofTokyo (Japan)

18:10 B-5-3
Influence of Local
Electric Field on
Electronic States ofGraphene Nanoribbons
A. Yamanaka and S.
Okada, Univ. of Tsukuba(Japan)

18:10 C-5-3
Photo-Assisted
Impedance Spectroscopy
for Quantum Dot Solar
Cell
T. Hoshii1, S. Naitoh1 andY. Okada1, Univ. of Tokyo(Japan)

18:10 F-5-3
Ammonia Gas Sensor
Based on Surface
Modified Poly-Si
Nanowires Field EffectTransistor
J.S. Hsu and H.M.P. Chen,
NCTU (Taiwan)

17:55 G-5-3
Thermally-Stable HighSn Concentration ( 〜9%) GeSn on Insulator by
Ultra-Low Temperature( 〜 180℃ ) Solid-Phase
Crystallization Triggeredby Laser-Anneal Seeding
R. Matsumura1,2, K. Moto1,
Y. Kai1, T. Sadoh1, H.
Ikenoue1 and M. Miyao1,
1
Kyushu Univ and 2JSPS
Research Fellow (Japan)

18:10 A-5-4
Temperature Dependent
Electroluminescencefrom GeSn
Heterojunction Light
Emitting Diode on Si
Substrate
C. Chang, H. Li, S.H.
Huang and H.H. Cheng,
National Taiwan Univ.
(Taiwan)

18:25 B-5-4
Back Gate BiasTemperature Instability
in Single-Layer DoubleGated Graphene FieldEffect Transistors
Y.Y. Illarionov1,2, M. Waltl1,
A.D. Smith3, S. Vaziri3, M.
Ostling3, M. Lemme4 and
T. Grasser1, 1TU Wien,
2
Ioffe Physical-Techn.
Inst., 3 KTH Royal Inst. of
Tech. and 4Univ. of Siegen(Austria)

18:25 F-5-4
Biosensing by Differential
Si Ring Resonators
Robust to Process
Variations
T. Taniguchi, S. Yokoyama,
Y. Amemiya, T. Ikeda, A.
Kuroda and S. Yokoyama,
Hiroshima Univ. (Japan)

18:10 G-5-4
Au Induced Low
Temperature Formationof (111) Preferential
Oriented Crystalline Ge
on Insulator
H. Okamoto, K. Kudo, T.
Nomitsu, K. Takakura and
I. Tsunoda, Kumamoto
College (Japan)

18:25 A-5-5
Sharp and Intense Sivacancy Center Emission
from Diamond Cube
Selective-grown on Si(100) Substrate
H. Isshiki, K. Komiya
and R. Kojima, Univ. ofElectro-Communications(Japan)

18:25 G-5-5
Enhancement of
Au Induced Lateral
Crystallization inElectron IrradiatedAmorphous Ge on SiO2
K. Moto1, S. Sakiyama1,
H. Okamoto1, H. Hara2,
H. Nishimura2, K.
Takakura1 and I. Tsunoda1,
1
Kumamoto College and2
Bruker BioSpin K.K.
(Japan)- 28 -

Tuesday, September 29
2F 201

2F 202

2F Small Hall

2F 204

2F 206

2F 207

K-5: Noise(17:25-18:25)
Chairs: F.-L. Yang
(Academia Sinica)
K. Kokubun(Toshiba)

M-5: Novel Widegap
Devices(17:25-18:40)
Chairs: C.-F. Huang(National Tsing
Hua Univ.)
N. Hara(Fujitsu Labs.)

N-5: Gate Stack
Characterization(17:25-18:55)
Chairs: H. Nohira(Tokyo City Univ.)
G. Nakamura(Tokyo Electron)

O-5: MRAM andSpintronics Logic(17:25-18:55)
Chairs: K. Ito(Tohoku Univ.)
H. Saito(Fujitsu Semicon.)

17:25 K-5-1
Transistor-level
Characterization of
SRAM Bit Failures
Induced by Random
Telegraph Noise
T. Mizutani, T. Saraya, K.
Takeuchi, M. Kobayashi
and T. Hiramoto, Univ. ofTokyo (Japan)

17:25 M-5-1 (Invited)Diamond Electronics
for Power Devices andSensing Applications
M. Hatano1,2, T. Iwasaki1,2
and S. Yamasaki2,3, 1Tokyo
Tech, 2 JST-CREST and
3
AIST (Japan)

17:25 N-5-1 (Invited)Engineering high-k/
InGaAs Interface for
Extremely Scaled Gate
StacksD. H. Zadeh1, H. Oomine2,
K. Kakushima2 and H.
Iwai2, 1NTT Device Tech.
Labs. and 2Tokyo Tech
(Japan)

17:25 O-5-1 (Invited)
Harvesting the Physics ofSpin and Magnetism for
Low Power Logic
I. Young, S. Manipatruni
and D. Nikonov, Intel
Corp. (USA )17:45 K-5-2
1⁄f Noise in Submicron
Top-Gate Crystalline
Oxide Semiconductor
FET
A. Hirose, T. Aoki, S.
Maeda, F. Akasawa, Y.
Kurokawa, T. Ikeda, M.
Tsubuku, T. Ishihara,
Y. Kobayashi and S.
Yamazaki, Semiconductor
Energy Lab. Co. Ltd.
(Japan)

17:55 M-5-2
High Voltage Diamond
MESFET with VBR >1.5kV
H. Umezawa1,2,3, T.
Matsumoto1, S. Ohmagari1,
Y. Kato1 and Y. Mokuno1,
1
AIST, 2 Univ. Grenoble
Alpes, Inst. Neel and3
CNRS, Inst. Neel (Japan)

17:55 N-5-2
Impact of La2O3Interfacial Layers on
InGaAs MOS Interface
Properties in ALD Al2O3/
La2O3/InGaAs Gate
StacksC.Y. Chang1,2, M.
Takenaka1,2 and S.
Takagi1,2, 1Univ. of Tokyoand 2JST-CREST (Japan)

17:55 O-5-2
10 nm p-MTJ Array
Design for Suppressing
Switching Delay Induced
by Interference Dueto Magnetic Dipole
Interaction for HighDensity STT-MRAM
S. Ohuchida1,3, K. Ito2,
M. Muraguchi1,2,3 and T.
Endoh1,2,3, 1Tohoku Univ.,
2
CIES, Tohoku Univ. and
3
JST-ACCEL (Japan)

18:05 K-5-3
Using Sub-microsecond
Measurement to Monitor
AC NBTI and Dividing
Trap Types into NIT,NHT and NFT through
Adjustable Stress
Frequency and Measure
Frequency
C.H. Chiang, N. Ke, S.N.
Kuo, A. Juan and K.C. Su,
UMC (Taiwan)

18:10 M-5-3
1.7 KV Breakdown C-H
Diamond MOSFETs
with High Drain Current
Density
Y. Kitabayashi, T. Yamada,
D. Xu, T. Saito, D.
Matsumura, A. Hiraiwa
and H. Kawarada, Waseda
Univ. (Japan)

18:15 N-5-3
First Demonstration of
300mm InGaAs-OnInsulator Substrates
Fabricated using the
Smart CutTM Technology
J. Widiez1,2, S. Sollier1,2,
T. Baron1,3, M. Martin1,3,
G. Gaudin4, F. Mazen1,2,
F. Madeira1,2, S. Favier1,2,
A. Salaun1,2, S. Arnaud1,3,
S. David1,3, E. Beche1,2, H.
Grampeix1,2, C. Veytizou4,
D. Delprat4 and T.
Signamarcheix1,2, 1Univ.
Grenoble Alpes, 2 CEALETI, 3 CNRS-LTM and
4
SOITEC (France)

18:15 O-5-3
Universal Damage
Recovery Scheme using
the Oxygen Showering
Post-treatment (OSP)
Process for Sub-20nm
High Density STTMRAM Devices
J.H. Jeong1, 2 and T.
Endoh1, 3, 4, 1Tohoku Univ.,
2
Samsung Electronics Co.
Ltd, 3 CIES, Tohoku Univ.
and 4JST-ACCEL, Tohoku
Univ. (Japan)

18:25 M-5-4
First Demonstration of
β-Ga2O3 Schottky Barrier
Diode with Field Plate
Edge Termination
K. Sasaki1,2, M.
Higashiwaki2, K. Goto1, K.
Nomura3, Q.T. Thieu3, R.
Togashi3, H. Murakami3, Y.
Kumagai3, B. Monemar3,4,
A. Koukitu3, A. Kuramata1
and S. Yamakoshi1,
1
Tamura Corp., 2 NICT, 3
Tokyo Univ. of Agri. &Tech. and 4Linköping Univ.
(Japan)

18:35 N-5-4
High Mobility
N-MOSFETs on GeSn
Film Formed by Solid
Phase Epitaxy with
Surface Passivation
by Oxygen Plasma
Treatment
Y.H. Wu, C.C. Su, Y.C.
Fang and C.H. Hsieh,
National Tsing Hua Univ.
(Taiwan)

18:35 O-5-4
Optimization of CoFeB
Capping Layer Thickness
for Characterization of
Leakage Spot in MgOTunneling Barrierof Magnetic Tunnel
Junction
S. Sato1,6, H. Honjo1,6, S.
Ikeda1,2,3,6, H. Ohno1,2,3,4, T.
Endoh1,2,5,6 and M. Niwa1,6,
1
CIES, Tohoku Univ., 2
CSIS, Tohoku Univ., 3
RIEC, Tohoku Univ., 4
WPI-AIMR, Tohoku Univ.,
5
Tohoku Univ. and 6JSTACCEL (Japan)- 29 -

1F 108b