AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/155

Introduction

Automotive applications

The DHAB family is for the electronic measurement of DC, ACor pulsed currents in high power and low voltage automotive
applications with galvanic separation between the primarycircuit (high power) and the secondary circuit (electronic circuit).
The DHAB family gives you the choice of having different current
measuring ranges in the same housing (from ±20 up to ±900 A).

● Battery Pack MonitoringFeatures● Open Loop transducer using the Hall effect● Low voltage application● Unipolar +5 V DC power supply● Primary current measuring range up to ±50 A for channel 1and ±800 A for channel 2● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C● Operating temperature range: −40 °C < T < +125 °C● Output voltage: full ratio-metric (in sensitivity and offset).

Special feature● Dual channel sensor for wider measurement range andredundancy.

Advantages● Good accuracy for high and low current range● Good linearity● Hybrid Vehicles● EV and Utility Vehicles.

Principle of DHAB Family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hallvoltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP
The Hall voltage is thus expressed by:

UHall = (cHall / d) × IHall × a × IP

Except for IP, all terms of this equation are constant.
Therefore:
UHall = b × IPaconstantbconstantcHall
Hall coefficient
dthickness of the Hall plate
IHall
current across Hall plates
The measurement signal UHall is amplified to supply the useroutput voltage or current.

● Low thermal offset drift● Low thermal sensitivity drift+ UC● Hermetic package.

IPUout- UC

Primary Current IP0V

Insulated Output Voltage Uout

Fig. 1: Principle of the open loop transducer.

N° 97.B6.99.155.0
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DHAB S/155

Dimensions (in mm)

IPUoutUoutUC

Mechanical characteristics

System architecture (example)● Plastic case

>PBT-GF30<● Magnetic core

Channel 1: FeNi alloy● MassUC+5 V

Channel 2: FeSi alloy● Electrical terminal coating

47 nF

100 nF

Brass tin plated

Primary
current

Mounting recommendation● Mating connector P/N

TYCO 1-1456426-5● Max assembly torque

2.5 N·m (for M4 x 0.7)

● Soldering type

N/A

Channel 1CL68 nF
Gnd

CGnd

Gn GnddCL
Gnd
Gnd

Uout > UO when IP flows in the positive direction (see arrow ondrawing).

RRL

Channel 2
68 nF

RemarkGnd

Gnd
IP M

82 g

Typical application +5 V
Schematic interface.

LEM - DHAB sensor.

RRL

Gnd Gnd

CGnd

RL > 10 ΚΩ optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC low pass filter EMC protection (optional).

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DHAB S/155

Absolute ratings (not operating)Parameter

SymbolSpecification

UnitMaximun supply voltage

UC max

VAmbient storage temperature

TA st°C

Electrostatic discharge voltage(HBM - Human Body Model)

UESD HBMkVMin

TypicalConditions

Max

8.5
14−14−40

125Continuous
Over voltage, 1 min
Reverse voltage, 1 min @ TA= 25 °C2

JESD22-A 114-B class 2

2.5

IEC 60664 part 1

10Continuous

8.5
14Continuous
Outpout over voltage,1 min @ TA= 25 °C

RMS voltage for AC insulation test, 50 Hz, 1 min

UdkV

Creepage distancedCpmm

ClearancedCICTImm

Comparative traking index
Maximum output current

Iout max

mA

Uout maxV

Insulation resistance

RINSMΩMaximum short-circuit durationtc maxsSymbol

Unit

Supply voltage 1)

UCVCurrent consumption

ICmA

Iout max

mA−1

Load resistance

RLΚΩ

10

Load capacitance

CLnF

1

100

Ambient operating temperature

TA°C−10−4065
125Primary current, measuring range

IP M channel 1A−50

Primary nominal DC or RMS current

IP N channel 1

A−50

Offset voltage

UOV

2.5

@ UC = 5 V

Sensitivity

SmV/A40@ UC = 5 V

ResolutionmV

2.5Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10Maximum output voltage (Analog)

3.1
3.1
425−10500

500 V DC, ISO 16750
120

Operating characteristics in nominal range (IP N)
Parameter

Specification
Min

TypicalMax

55.25

1520

Conditions

Electrical Data

Maximum output current

4.75

1

High accuracy
Reduced accuracy

Performance Data channel 1

Output clamping voltage max 1)US Z

5050@ UC = 5 V

Output internal resistanceRoutΩ1Frequency bandwidth 2) @ −3 dBBWkHz

1.1

Start-up timetstartms

25

Setting time after over loadtsms

Ratiometricity error

εr%

−0.6

0.6

Uno ppmV−1010

Peak-to-peak noise voltage@ TA = 25 °C

200
25Performance Data channel 2

Primary current, measuring range

IP M channel 2

A−800

Primary nominal DC or RMS current

IP N channel 2

A−800

Offset voltage

UOV

2.5

@ UC = 5 V

Sensitivity

SmV/A

2.5

@ UC = 5 VResolutionmV

2.5

Output clamping voltage min 1)

V

0.2

0.250.3@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10Output clamping voltage max 1)

US Z

800
800

@ UC = 5 V

Output internal resistanceRoutΩ1Frequency bandwidth 2) @ −3 dB

BWkHz

1.1

Start-up timetstart

ms25

Setting time after over loadts

ms

Ratiometricity error

εr%

−0.6

0.6

Uno ppmV−1010

Peak-to-peak noise voltage
Notes:1)@ TA = 25 °C

200
25The output voltage Uout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula: 5 1× U out − U O  × with S in (V/A)
IP =  UC S2)	Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC(see feature paragraph in page 1.

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DHAB S/155Error
Channel 1

Parameter

SymbolSpecification

Unit

Min

TypicalConditions

Max

Electrical Data
Electrical offset current

IO EA

Magnetic offset current

IO M

AOffset current±0.07±0.03

A

IO@ TA = 25 °C

Sensitiviy errorεS%Linearity errorεL%

SymbolUnit@ TA = 25 °C−0.150.15@ TA = 25 °C−0.230.23@ −10 °C < T < 65 °C−0.350.35@ −40 °C < T < 125 °C±0.4@ TA = 25 °C±1.0@ −10 °C < T < 65 °C±1.5@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ UC = 5 V, of full range

Accuracy table

Parameter

Temperature

Total error @ 0 A

εtot

Total error @ ±25 AA

Total error @ ±50 A−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

0.35

0.29

0.23

0.15

0.23

0.35

1.20

0.98

0.77

0.50

0.80

1.20

1.50

1.25

1.01

0.70

1.02

1.50

DHAB S/155 Channel 1 Total error εtot (A)
2.00
1.80

Total error (A)

1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00

-40-20

020

4060

80

100120140

Temperature (°C)
Total error @ 0 A

Total error @ ±25 A

Total error @ ±50 A

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DHAB S/155

Error
Channel 2

Parameter

SymbolSpecification

Unit

Min

TypicalConditions

Max

Electrical Data
Electrical offset current

IO EA±0.6@ TA = 25 °C

Magnetic offset current

IO M

A±0.25@ TA = 25 °C

Offset current

IOA−1.41.4@ TA = 25 °C

−1.96

1.96

@ −10 °C < T < 65 °C

2.8@ −40 °C < T < 125 °C−2.8

Sensitiviy error%

εSLinearity errorεL%

SymbolUnit±0.4@ TA = 25 °C±0.8@ −10 °C < T < 65 °C±1.2@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ UC = 5 V, of full range

Accuracy table

Parameter

Temperature

Total error @ 0 A

εtot

Total error @ ±400 AA

Total error @ ±800 A−40 °C−20 °C0 °C

25 °C

65 °C

125 °C2.802.37

1.94

1.40

1.96

2.80

10.00

9.08

8.15

7.00

8.20

10.00

16.00

14.15

12.31

10.00

12.40

16.00

DHAB S/155 Channel 2: Total error εtot (A)
18.00
16.00

Total error (A)

14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00

-40

-20

0

20

40

60

80

100

120

140

Temperature (°C)
Total error @ 0 A

Total error @ ±375 A

Total error @ ±800 A

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DHAB S/155

PERFORMANCES PARAMETERS DEFINITIONSDelay time tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

Uout

I [A]

Primary current nominal (IP N)

IT

90 %

Primary current, measuring range (IP M)

Uout

IPtD 90

IPDefinition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Magnetic offset:

Sensitivity with temperature:

The magnetic offset is the consequence of an any current onthe primary side. It’s defined after a stated excursion of primarycurrent.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.
Uout

The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The average temperature coefficient of sensitivity TCSAV, ST is
the maximum temperature variation of S (in ppm or %) of thesensitivity in the temperature range:
ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The average temperature coefficient of sensitivity TCSAV is theST value divided by the temperature range.
Deeper and detailed info available is our LEM technical sales
offices (www.lem.com).

Non linearity example

Offset voltage @ IP = 0 A:

Referencestraight line
Max linearity error

IPLinearity variation in IP N

The offset voltage is the output voltage when the primary current
is zero. The ideal value of UO is UC/2. So, the difference ofUO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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DHAB S/155Name

StandardConditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4
IEC 60068-2-1 Ad−40 °C, 240 h; power ON

HTOE (high temperature operating endurance test)

ISO 16750-4
IEC 60068-2-2 Bd

1000 h; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles ; offset monitored

Thermal shockIEC 60068-2-14 Na−40 °C (20 min soak) /125 °C (20 min soak) , 1000 cycles, withconnectors => 667 h (28 days)−40 °C, 240 h; no power supply

High temperature and humidity endurance

JESD22-A101

1000 H; 85 °C / 85 % HR; power ON; Monitored once a day

Salt fog

IEC 60068-2-11

96 h @ 35 °C , 5 % of salt water solution, characterization before
and after test only at 25 °C and UC nominal

Mechanical tests
Vibration in temperature

ISO 16750-3 § 4.1.2.4
mass suspended

Continuous monitoring: offsetShocks

ISO 16750-3§ 4.2

Power ON. Profile 1 (500 m∙s-2; 11 ms) 10 shocks per axe Halfsinusoidal pulse

Free Fall test

ISO 16750-3

3 axis, 2 directions by axis;1 sample per axis; 1 m; concrete floor

EMC tests

B.C.I. (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz.
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100 V/m (rms); from 400 M to 1 GHz Functional class: ALevel: 70 V/m (rms) from 1 G to 2 GHz Functional class: AEmission

E.S.D. not supplied

CISPR 25
IEC 61000-4-2 +ISO 10605(07/2008)

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ± 8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests
Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14Page 7/7
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LEM International SA
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