AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/113

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between theprimary circuit (high power) and the secondary circuit (electroniccircuit).
The DHAB family gives you a choice of having different
current measuring ranges in the same housing (from ±20 up to±900 A).

●● Battery Pack MonitoringFeatures●● Open Loop transducer using the Hall effect●● Hybrid Vehicles●● EV and Utility Vehicles.

Principle of DHAB family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.

●● Unipolar +5 V DC power supply

The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:●● Primary current measuring range up to ±40 A for channel 1
and ±400 A for channel 2B (IP) = a × IP
The Hall voltage is thus expressed by:●● Low voltage application●● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C●● Operating temperature range: −40 °C < T < +125 °C●● Output voltage: full ratiometric (in sensitivity and offset).

Special feature●● Dual channel sensor for wider measurement range andredundancy.

Advantages

VH = (cH / d) × IH × a × IP
Except for IP, all terms of this equation are constant.
Therefore:VH = b × IPaconstantbconstantcHHall coefficient
dthickness of the Hall plate
IH
current across the Hall plates
The measurement signal VH amplified to supply the user output
voltage or current.

●● ood accuracy for high and low current range●● Good linearity●● Low thermal offset drift●● Low thermal sensitivity drift●● Hermetic package.

Fig. 1: Principle of the open loop transducer.

N°97.B6.99.113.0
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DHAB S/113Dimensions (in mm)

IP

VoutVoutUC

Mechanical characteristics●● Plastic case

>PBT-GF30<●● Magnetic core

Channel 1: FeNi alloy			

Channel 2: FeSi alloy●● Electrical terminal coating Brass tin plated●● Mass		82 g●● Degrees of protection provided by enclosure IP6K9K

System architecture (example)
LEM - DHAB sensor.
+5V

Typical application +5V
Schematic interface.

47 nF

100 nF

Gnd

Gnd

IPM
Primarycurrent

Channel 1

CL

68 nF
Gnd

Mounting recommendation●● Mating connector P/N
TYCO 1-1456426-5

UCCLGndGnd●● Clamping force must be applied on the compression limiter

RemarkCGndGnd Gnd

Channel 2
68 nF●● Max assembly torque
2.5 N⋅m (for M4 × 0.7)

RRL

R

RL

Gnd Gnd

CGnd

RL > 10 kW optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)●● Vout > Vo when IP flows in the positive direction(see arrow on drawing).

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DHAB S/113

Absolute ratings (not operating)Parameter

SymbolUnit

Maximun supply voltage
Ambient storage temperature
Electrostatic discharge voltage
RMS voltage for AC insulation test, 50 Hz, 1 min
Creepage distance
Clearance
Comparative tracking index
Maximum output current

UCTS
UESD
UddCp
dCI
CTI
Iout

V°C
kV
kVmmmmMaximum output voltage (Analog)
RIS
tc

Insulation resistance
Output short circuit maximum duration

Min
−14
−40

Specification
TypicalConditions

Max
14125
8
2.5

IEC 61000-4-2 - ISO 10605
ISO 16750-2

3.1
3.1
PLC3mA−1010Continuous

V−1414

Output over voltage,1 min @TA= 25°CMΩs500

500 V DC, ISO 16750-2∞

Operating characteristics in nominal range (IPN)

Primary current, measuring range
Primary nominal DC or RMS current
Offset voltage
Sensitivity
Resolution
Output clamping voltage min 1)
Output clamping voltage max 1)
Output internal resistanceFrequency bandwidth 2)
Power up time
Setting time after overload
Ratiometricity error
Peak-to-peak noise voltage

Specification
Min
TypicalElectrical DataUC
V
4.75
5ICmA15IoutmA−1RLΚΩ10CLnF1−10TA°C−40
Performance Data channel 1
IPM channel 1
A−40
IPN channel 1
A−40
VOV
2.5
GmV/A50mV
2.5
V
0.2
0.25
VSZV
4.7
4.75
Rout
Ω1BWHz70
mstsmsεr%−0.6
Vno ppmV−10

Primary current, measuring range
Primary nominal DC or RMS current
Offset voltage
Sensitivity
Resolution
Output clamping voltage min 1)
Output clamping voltage max 1)
Output internal resistanceFrequency bandwidth 2)
Power up time
Setting time after overload
Ratiometricity error
Peak-to-peak noise voltage

Performance Data channel 2
IPM channel 2
A−400
IPN channel 2
A−400VOV
2.5GmV/A5mV
2.5V
0.20.25
VSZV
4.7
4.75RoutΩ1BW
Hz70
mstsmsεr%−0.6
Vno ppmV−10Parameter

SymbolSupply voltage 1)
Current consumption
Maximum output current
Load resistance
Capacitive loading
Ambient operating temperature

Notes:1)

Conditions

Max
5.25
20
1
10065
125
40
40

0.3
4.8
10High accuracy
Reduced accuracy@TA = 25 °C@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB

1100.6104004000.34.810@ TA = 25 °C@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB

1100.610The output voltage Vout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:
IP = (2)Unit

51× Vout − VO) ×with G in (V/A)
UCG

 rimary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC (see featureP
paragraph in page 1.)

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DHAB S/113
Accuracy
Channel 1
SymbolUnit

Specification
TypicalElectrical offset current

IOE

A±0.07

Magnetic offset current

IOM

A

Offset current

IO

A

Sensitiviy error

εG%±0.4±1.0±1.5

Linearity error

εL%±0.5

Parameter

Min
Electrical Data

±0.03

−0.15
−0.26
−0.35

Conditions

Max@ TA = 25 °C0.150.260.35@ TA = 25 °C@ TA = 25 °C@ −10 °C < T° < 65 °C@ −40 °C < T° < 125 °C@ TA = 25 °C@ −10 °C < T° < 65 °C@ −40 °C < T° < 125 °C@ TA = 25 °C, @ Uc = 5 V, offull range

Accuracy table
Parameter

SymbolUnit

Temperature−40 °C
Accuracy @ 0 A
Accuracy @ ± 20 AX

AAccuracy @ ± 40 A

−20 °C 0 °C25 °C

65 °C 125 °C

0.35

0.29

0.23

0.15

0.23

0.35

1.20

0.98

0.77

0.50

0.80

1.20

1.50

1.25

1.01

0.70

1.02

1.50

DHAB S/113 Channel 1: Absolute Accuracy X (A)
2.00

Absolute accuracy (A)

1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00

-40-20

020

4060

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±20A

Accuracy @ ±40A
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DHAB S/113
Accuracy
Channel 2
SymbolUnit

Specification
TypicalElectrical offset current

IOE

A

±0.7

Magnetic offset current

IOMAOffset current

IOASensitiviy error

εG%±0.4±0.8±1.2

Linearity error

εL%±0.5Symbol

UnitParameter

MinElectrical Data

±0.3

−1.2−1.43−1.8ConditionsMax@ TA= 25 °C
1.21.43
1.8@ TA= 25 °C@ TA= 25 °C@ −10 °C < T° < 65 °C@ −40 °C < T° < 125 °C@ TA = 25 °C@ −10 °C < T° < 65 °C@ −40 °C < T° < 125 °C@ TA = 25 °C, @ Uc = 5 V, offull range

Accuracy table
Parameter

Temperature−40 °C −20 °C 0 °C
Accuracy @ 0 A
Accuracy @ ±200 AXAAccuracy @ ±400 A

25 °C

65 °C 125 °C

1.8

1.6

1.4

1.2

1.4

1.8

10.0

8.8

7.5

6.0

7.6

10.0

13.0

11.2

9.3

7.0

9.4

13.0

DHAB S/113 Channel 2: Absolute Accuracy X (A)14.0

Absolute accuracy (A)

12.0
10.0
8.0
6.0
4.0
2.0
0.0

-40

-200

20

40

60

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±200 A

Accuracy @ ±400 A
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DHAB S/113
PERFORMANCES PARAMETERS DEFINITIONS

Sensitivity:

Primary current definition:

The transducer’s sensitivity G is the slope of the straight line

Vout

Vout = f (IP), it must establish the relation:
Vout (IP) = UC/5 (G × IP + VO)

Primary current nominal (IPN)
Primary current, measuring range (IPM)

Offset with temperature:
I [A]

IT

90 %

IP

VoutIPtr

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IOT is a maximum variation the offset in thetemperature range:
IOT = IOE max − IOE min
The offset drift TCIOE AV is the IOT value divided by the temperature
range.

Sensitivity with temperature:

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.

Magnetic offset:

The sensitivity variation GT is the maximum variation (in ppm or%) of the sensitivity in the temperature range:

The magnetic offset is the consequence of an over-current on
the primary side. It’s defined after an excursion of IPN.

Linearity:
The maximum positive or negative discrepancy with a reference

GT = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCG AV is the GT value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

straight line Vout = f (IP).
Unit: linearity (%) expressed with full scale of IPN.

Offset voltage @ IP = 0 A:

Response time (delay time) tr:

is zero. The ideal value of VO is UC/2. So, the difference of VO

The offset voltage is the output voltage when the primary current

The time between the primary current signal (IPN) and theoutput signal reach at 90 % of its final value.
VoutNon linearity example− UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Referencestraight line
Max linearity error
IPLinearity variation in IPN
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DHAB S/113
Environmental test specifications:
NameStandardConditions

HTOE (high temperature operating endurancetest)

ISO 16750-4
IEC 60068-2-1
ISO 16750-4
IEC 60068-2-1 AdISO 16750-4
IEC 60068-2-2 Bd

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles;
offset monitored

Thermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak), 1000
cycles, with connectors => 667 h (28 days)

High temperature and humidity endurance

JESD22-A101

1000 H; 85 °C / 85 % HR; power ON; Monitored
once a day
Accuracy criteria: X < 3% @ 25 °C, @ IP max CH1
Accuracy criteria: X < 3% @ 25 °C, @ IP max CH2Salt fog

IEC 60068-2-11

96 h @ 35 °C , 5 % of salt water solution,characterization before and after test only at 25 °C
and UC nominal

Low temperature storage test
Low temperature operation test

−40 °C, 240 h; no power supply−40 °C, 240 h; power ON
1000 h; power supply @ 125 °C

Mechanical tests

ISO 16750-3 § 4.1.2.4
Continuous monitoring: offset
mass suspended

Vibration in temperature
ShocksISO 16750-3§ 4.2

Free Fall test

ISO 16750-3

Power ON. Profile 1 (500 m⋅s-2; 11 ms) 10 shocks
per axe Half sinusoidal pulse
3 axis, 2 directions by axis; 1 sample per axis; 1m.; concrete floor

EMC test

BCI (bulk current injection)

Radiated electromagnetic immunity

Emission

From 1 to 400 MHz
ISO 11452-4
Level 1: 60 mA; Functional class: A
Annex E.1.1, Table E.1 Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B
Level: 100V/m (RMS); from 400 M to 1 GHz
ISO 11452-2
Functional class: A
GMW 3097 (04.2012)
Level: 70V/m (RMS) from 1 G to 2 GHz Functional
table 12 p.21 (level 2)class: A
CISPR 25
IEC 61000-4-2 +ISO 10605(07/2008)

ESD not supplied

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests

Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14

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