AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/145

Picture of product with pencil

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between the
primary circuit (high power) and the secondary circuit (electroniccircuit).
The DHAB family gives you a choice of having different
current measuring ranges in the same housing (from ±20 up to±900 A).

●● Battery Pack MonitoringFeatures●● Open Loop transducer using the Hall effect●● Low voltage application●● Unipolar +5 V DC power supply●● Primary current measuring range up to ±50 A for channel 1
and ±200 A for channel 2●● Hybrid Vehicles●● EV and Utility Vehicles.

Principle of DHAB family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportional
to:B (IP) = constant (a) × IP

The hall voltage is thus expressed by:
VH = (Hall coefficient / d) × I × constant (a) × IP

With d = thickness of the hall plates●● Maximum RMS primary admissible current: defined by

I = current accross the Hall plates

busbar to have T° < +150 °C●● Operating temperature range: −40 °C < T° < +125 °C●● Output voltage: full ratio-metric (in sensitivity and offset).

Except for IP, all terms of this equation are constant.
Therefore:VH = constant (b) × IP
The measurement signal VH amplified to supply the user output
voltage or current.

Special feature●● Dual channel sensor for wider measurement range andredundancy.

Advantages●● Good accuracy for high and low current range●● Good linearity●● Low thermal offset drift●● Low thermal sensitivity drift●● Hermetic package.

97.B6.99.145.0
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Fig. 1: Principle of the open loop transducer

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Dimensions (in mm)

IPVoutVoutUC

Mechanical characteristics●● Plastic case

>PBT-GF30<●● Magnetic core

Channel 1: FeNi alloy●● 		Channel 2: FeSi alloy●● Electrical terminal coating Brass tin plated●● Mass		82 g●● Degrees of protection provided by enclosure: IP6K9K

System architecture (example)
LEM - DHAB sensor.
+5V

TYCO 1-1456426-5●● Max assembly torque

2.5 N⋅m (for M4 × 0.7)

Typical application +5V
Schematic interface.

47 nF

100 nF

Gnd

Gnd

IPM
Primarycurrent

Channel 1

CL68 nF
Gnd

Mounting recommendation●● Mating connector P/NUCR

Gnd

Gnd GndChannel 2

CL68 nF

GndGndCRLRCRL

Gnd GndGnd●● Clamping force must be applied on the compression limiter●● Soldering type

N/A

Remark

RL > 10 kW optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)●● Vout > Vo when IP flows in the positive direction (see arrowon drawing).
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Absolute ratings (not operating)Parameter

SymbolUnitMin

Specification
TypicalConditions

Max

Maximun supply voltage

UCV

−1414

Ambient storage temperature

TS°C

−40

125

Electrostatic discharge voltage

UESD

kV

8

IEC 61000-4-2 - ISO 10605

Rms voltage for AC insulation test, 50 Hz, 1 min

UdkV

2.5

ISO 16750-2

Creepage distancedCpmm

ClearancedCImm

Comparative tracking index

CTI

Maximum output current

Iout

3.1
3.1
PLC3

Maximum output voltage (Analog)

mA−1010Continuous

V−1414

Output over voltage,1 min @TA= 25 °C

500

Insulation resistance

RISMΩ

Output short circuit maximum durationtcs

500 V DC, ISO 16750-2
120

Operating characteristics in nominal range (IPN)
Parameter
Supply voltage 1)
Current consumption
Maximum output current
Load resistance
Capacitive loading
Ambient operating temperature

SymbolUnit

Min
Electrical DataVUC

mA
mA

−1RL

ΚΩ

10

CLnF°C

TAMax

55.25

15204.75

ICIoutSpecification
TypicalConditions

11100−1065

High accuracy−40125

Reduced accuracy

Performance Data channel 1

IPM channel 1

A−50

A−50

VOV

2.5

@ UC = 5 V

GmV/A40@ UC = 5 VResolutionmV

2.5

Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10Primary current, measuring range
Primary nominal DC or rms current
Offset voltage
Sensitivity

Output clamping voltage max 1)

IPN channel 1

VSZ5050

Output internal resistanceRoutΩ1Frequency bandwidth 2)

BWkHz

1.1

Power up time

ms@ UC = 5 V@ −3 dB
1

Setting time after over loadtsms

Ratiometricity error

εr%−0.60.6mV−1010

Output voltage noise peak-peakVno pp@TA = 25 °C

10Performance Data channel 2
Primary current, measuring range
Primary nominal DC or rms current
Offset voltage
Sensitivity

IPM channel 2

A−200

A−200VOVG

IPN channel 2200200@TA = 25 °C

2.5@ UC = 5 V@ UC = 5 V

mV/A

10Resolution

mV

2.5

Output clamping voltage min 1)

V

0.2

0.250.3@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10Output clamping voltage max 1)

VSZ

Output internal resistanceRoutΩ1

Frequency bandwidth 2)

BWkHz

1.1

Power up timems@ UC = 5 V@ −3 dB
1

Setting time after over loadts

ms

Ratiometricity error

εr

%

−0.6

0.6

Vno ppmV−1010Output voltage noise peak-peakNotes:1)

The output voltage Vout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:
IP = (2)1051
× Vout − VO) ×with G in (V/A)
UCGPrimary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC
(see feature paragraph in page 1.)
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Accuracy
Channel 1
Parameter

SymbolMin
Electrical Data

Electrical offset current

IOE

AMagnetic offset current

IOMAIO

Offset current

Sensitiviy error@TA = 25 °C±0.03@TA = 25 °C−0.150.15@TA = 25 °C−0.230.23@ −10 °C < T° < 65 °C−0.350.35%%εLConditions

Max±0.07A

εGLinearity error

Specification
TypicalUnit@ −40 °C < T° < 125 °C±0.4@TA = 25 °C±1.0@ −10 °C < T° < 65 °C±1.5@ −40 °C < T° < 125 °C±0.5@TA = 25 °C, @ Uc = 5 V, of fullrange

Accuracy table
Parameter

SymbolUnit

Accuracy @ 0 A
Accuracy @ ±20 A

XA

Accuracy @ ±50 A

Temperature−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

0.35

0.29

0.23

0.15

0.23

0.35

1.200.98

0.77

0.50

0.78

1.20

1.50

1.25

1.01

0.70

1.02

1.50

DHAB S/145 Channel 1: Absolute Accuracy X(A)
3.00

Absolute accuracy (A)

2.50
2.00
1.50
1.00
0.50
0.00

-40

-20

020

4060

80

100

120

140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±20 A

Accuracy @ ±50 A

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Accuracy
Channel 2Parameter

SymbolUnit

Electrical offset current

IOEAMagnetic offset current

IOMAIO

Offset current

Sensitiviy error

A@ TA= 25 °C±0.25@ TA= 25 °C−11−1.32

1.20@ −10 °C < T° < 65 °C−1.51.5@ −40 °C < T° < 125 °C%εLConditions

Max

±0.6%

εG

Linearity error

Specification
TypicalMin
Electrical Data

@ TA= 25 °C±0.4@ TA = 25 °C±0.8@ −10 °C < T° < 65 °C±1.2@ −40 °C < T° < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of fullrange

Accuracy table
Parameter

SymbolUnitAccuracy @ 0 A
Accuracy @ ±100 A

XAAccuracy @ ±200 A

Temperature−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

1.50

1.35

1.19

1.00

1.20

1.50

4.00

3.54

3.08

2.50

3.10

4.00

7.00

5.77

4.54

3.00

4.60

7.00

DHAB S/145 Channel 2: Absolute Accuracy X(A)
12.00

Absolute accuracy (A)

10.00
8.00
6.00
4.00
2.00
0.00

-40

-20

0

Accuracy @ 0 A

20406080
Temperature (°C)

Accuracy @ ±100 A

100120140

Accuracy @ ±200 A

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PERFORMANCES PARAMETERS DEFINITIONS

Sensitivity:

Primary current definition:

The transducer’s sensitivity G is the slope of the straight line
Vout = f (IP), it must establish the relation:

Vout

Primary current nominal (IPN)
Primary current, measuring range (IPM)

Vout (IP) = UC/5 (G × IP + Vo)

Offset with temperature:
I [A]

IT90 %IP

VoutIPDefinition of typical, minimum and maximumvalues:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:
The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

Magnetic offset:
The magnetic offset is the consequence of an over-current on
the primary side. It’s defined after an excursion of IPN.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Vout = f (IP).
Unit: linearity (%) expressed with full scale of IPN.

Response time (delay time) tr:
The time between the primary current signal (IPN) and theoutput signal reach at 90 % of its final value.
Vout

Non linearity example

trt [µs]

The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IOT is a maximum variation the offset in thetemperature range:
IOT = IOE max − IOE min

The offset drift TCIOEAV is the IOT value divided by the temperaturerange.

Sensitivity with temperature:
The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation GT is the maximum variation (in ppm or%) of the sensitivity in the temperature range:
GT = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCGAV is the GT value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary
current is zero. The ideal value of VO is UC/2 at UC = 5 V. So,
the difference of VO − UC/2 is called the total offset voltage error.
This offset error can be attributed to the electrical offset (dueto the resolution of the ASIC quiescent voltage trimming), themagnetic offset, the thermal drift and the thermal hysteresis.
Deeper and detailed info available is our LEM technical sales
offices (www.lem.com).

Referencestraight line
Max linearity error
IP

Linearity variation in IPN

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Environmental test specifications:
NameStandard

Conditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4£IEC 60068-2-1 Ad−40 °C, 240 hours; power ON

HTOE (high temperature operating endurancetest)

ISO 16750-4
IEC 60068-2-2 Bd

1000 hours; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles; offset
monitored

Thermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak), 1000 cycles,with connectors => 667 hours (28 days)

High temperature and humidity endurance

JESD22-A101

1000 hours; 85 °C / 85 % HR; power ON; Monitored once aday

Salt fog

IEC 60068-2-11

96 hours @ 35 °C, 5 % of salt water solution, characterization
before and after test only at 25 °C and UC nominal−40 °C, 240 hours; no power supply

Mechanical tests
ISO 16750-3 § 4.1.2.4
mass suspended

Vibration in temperatureContinuous monitoring: offset

ShocksISO 16750-3§ 4.2

Power ON. Profile 1 (500 m∙s-2; 11 ms) 10 shocks per axe
Half sinusoidal pulse

Free Fall test

ISO 16750-3

3 axis, 2 directions by axis;1 sample per axis; 1 m.; concretefloor

EMC test
BCI (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz.
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100 V/m (rms); from 400 M to 1 GHz Functional,
class: A
Level: 70 V/m (rms) from 1 G to 2 GHz Functional class: AEmission

CISPR 25

ESD not supplied

IEC 61000-4-2 +ISO 10605(07/2008)

Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests

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