AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/160

Picture of product with pencil

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between the
primary circuit (high power) and the secondary circuit (electroniccircuit).
The DHAB family gives you a choice of having different
current measuring ranges in the same housing (from ±20 up to±900 A).

●● Battery Pack MonitoringFeatures●● Open Loop transducer using the Hall effect●● Low voltage application●● Unipolar +5 V DC power supply●● Primary current measuring range up to ±50 A for channel 1and ±300 A for channel 2●● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C●● Operating temperature range: −40 °C < T < +125 °C●● Output voltage: full ratio-metric (in sensitivity and offset).

Special feature●● Dual channel sensor for wider measurement range andredundancy.

●● Hybrid Vehicles●● EV and Utility Vehicles.

Principle of DHAB family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP

The Hall voltage is thus expressed by:
VH = (cH / d) × IH × a × IP
Except for IP, all terms of this equation are constant.
Therefore:
VH = b × IPaconstantb
constantcH
Hall coefficient
dthickness of the Hall plate
IH
current across the Hall plates
The measurement signal VH amplified to supply the user output
voltage or current.

Advantages●● Good accuracy for high and low current range●● Good linearity●● Low thermal offset drift●● Low thermal sensitivity drift●● Hermetic package.

Fig. 1: Principle of the open loop transducer.

N° 97.B6.99.160.0
23March2018/version 0

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DHAB S/160
Dimensions DHAB S/160 (in mm)

IPVoutVoutUC

Mechanical characteristics●● Plastic case

>PBT-GF30<●● Magnetic core

Channel 1: FeNi alloy			

Channel 2: FeSi alloy●● Electrical terminal coating Brass tin plated●● Mass		82 g●● Degrees of protection provided by enclosure IP6K9K

System architecture (example)
LEM - DHAB sensor.
+5 V●● Max assembly torque

TYCO 1-1456426-5
2.5 N⋅m (for M4 × 0.7)●● Clamping force must be applied on the compression limiter●● Soldering type:NARemarkTypical application +5 V
Schematic interface.

47 nF

100 nF

Gnd

Gnd

IP M
Primarycurrent

Channel 1

CL68 nF
Gnd

Mounting recommendation●● Mating connector P/N

UCR

RL

Gnd

Gnd GndChannel 2

CL68 nF

Gnd
Gnd

CR

RL

Gnd Gnd

CGnd

RL > 10 kW optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)●● Vout > Vo when IP flows in the positive direction(see arrow ondrawing).

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DHAB S/160
Absolute ratings (not operating)Parameter

SymbolUnitMinSpecification
TypicalConditions

MaxUC max

V−1414

Ambient storage temperature

TS°C

−40

125

Electrostatic discharge voltage

UESDkV8

IEC 61000-4-2 - ISO 10605

RMS voltage for AC insulation test, 50 Hz, 1 min

UdkV

2.5

ISO 16750-2

Creepage distancedCpmm

ClearancedCImm

Comparative tracking index

CTIMaximun supply voltage

3.1
3.1
PLC3

Maximum output current

Iout maxmA−1010Continuous

Maximum output voltage (Analog)

Vout max

V−1414

Output over voltage,1 min @TA= 25 °C

Insulation resistance

RINSMΩ

500

Output short circuit maximum durationtc maxs

500 V DC, ISO 16750-2
120

Operating characteristics in nominal range (IP N)
Parameter

SymbolSpecification
Min
TypicalElectrical Data

Unit

Supply voltage 1)

UC

V

Current consumption

ICmA

Maximum output current

Iout

mA

−1

Load resistance

RLkΩ

10

Capacitive loading

CLnF

TAAmbient operating temperature°C

4.75

Conditions

Max

55.25

15201

1100

−1065

High accuracy

−40

125

Reduced accuracy

Performance Data channel 1

Primary current, measuring range

IP M channel 1

A−50

Primary nominal DC or RMS current

IP N channel 1

A−50

Offset voltage

VOV

2.5

@ UC = 5 VSensitivity

GmV/A40@ UC = 5 VResolution

mV

2.5

Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10VS Z

Output clamping voltage max 1)

50Output internal resistanceRoutΩ1Frequency bandwidth 2)

BWkHz

1.1

Power up time

msSetting time after overload
Peak-to-peak output noise@ TA = 25 °C@ UC = 5 V@ −3 dB
1ms

Ratiometricity error

5010εr%−11Vno pp

mV−1010

Performance Data channel 2
Primary current, measuring range

IP M channel 2

A−300

Primary nominal DC or RMS current

IP N channel 2

A−300

Offset voltage

VOV

2.5

@ UC = 5 V

Sensitivity

GmV/A

6.67

@ UC = 5 V

Resolution

mV

2.5

Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 VV

4.7

4.75

4.8

@ UC = 5 V

10VS Z

Output clamping voltage max 1)

300
300

Output internal resistanceRoutΩ1Frequency bandwidth 2)

BWkHz

1.1

Power up timems

@ UC = 5 V@ −3 dB
1

Setting time after overloadts

ms

Ratiometricity error

εr%

−1

1

Vno ppmV−10

10

Peak-to-peak output noise
Notes:1)

10

The output voltage Vout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:
IP = (2)@ TA = 25 °C

51× Vout − VO) ×with G in (V/A)
UCGPrimary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC
(see feature paragraph in page 1.)

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DHAB S/160
Accuracy
Channel 1
Parameter

SymbolUnit

Electrical offset current

IO EA

Magnetic offset current

IO MAIO

Offset current@ TA = 25 °C@ TA = 25 °C±0.03@ TA = 25 °C

−0.15

0.15

−0.26

0.23

@ −10 °C < T < 65 °C−0.350.35@ −40 °C < T < 125 °C%

εLLinearity error

Conditions

Max±0.07

A

εG

Sensitiviy error

Specification
TypicalMin
Electrical Data%±0.4@ TA = 25 °C±1.0@ −10 °C < T < 65 °C±1.5@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of full range

Accuracy table
Parameter

SymbolUnit

Accuracy @ 0 A
Accuracy @ ±25A

XA

Accuracy @ ±50 A

Temperature−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

0.350.29

0.23

0.15

0.23

0.351.20

0.98

0.77

0.50

0.78

1.20

1.70

1.40

1.10

0.70

1.10

1.70

DHAB S160 Channel 1: Absolute Accuracy X(A)
3.00

Absolute accuracy (A)

2.50
2.00
1.50
1.00
0.50
0.00

-40

-20

020

40

60

80

100

120

140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±25 A

Accuracy @ ±50 A

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DHAB S/160
Accuracy
Channel 2Parameter

Specification
TypicalSymbol

Unit

Electrical offset current

IO EA±0.6@ TA= 25 °C

Magnetic offset current

IO MA±0.25@ TA= 25 °C

Offset current

IOAMinElectrical Data

εGSensitiviy error@ TA= 25 °C−11−1.32

1.20@ −10 °C < T < 65 °C−1.51.5@ −40 °C < T < 125 °C%

εLLinearity error

Conditions

Max%±0.4@ TA = 25 °C±0.8@ −10 °C < T < 65 °C±1.2@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of fullrange

Accuracy table
Parameter

SymbolUnitTemperature−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

1.50

1.35

1.19

1.00

1.20

1.50

5.00

4.45

3.89

3.20

3.92

5.00

9.0

7.62

6.23

4.50

6.30

9.00

Accuracy @ 0 A
Accuracy @ ±150 A

XA

Accuracy @ ±300 A

DHAB S160 Channel 2: Absolute Accuracy X(A)
12.00

Absolute accuracy (A)

10.00
8.00
6.00
4.00
2.00
0.00

-40

-20

020

4060

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±150 A

Accuracy @ ±300 A

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DHAB S/160
PERFORMANCES PARAMETERS DEFINITIONS

Response time (delay time) tr:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

Vout

I [A]

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %VoutIPtr

IPDefinition of typical, minimum and maximumvalues:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:
The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

Magnetic offset:
The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primary
current.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Vout = f (IP).
Vout

Non linearity examplet [µs]

Sensitivity:
The transducer’s sensitivity G is the slope of the straight line
Vout = f (IP), it must establish the relation:
Vout (IP) = UC/5 (G × IP + VO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min
The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Sensitivity with temperature:
The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation GT is the maximum variation (inppm or %) of the sensitivity in the temperature range:
GT = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCGAV is the GT value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary current

Referencestraight lineis zero. The ideal value of VO is UC/2. So, the difference ofMax linearity error

IPLinearity variation in IP N

Unit: linearity (%) expressed with full scale of IP N.

VO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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Environmental test specifications:
NameStandardConditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4
IEC 60068-2-1 Ad−40 °C, 240 hours; power ON

HTOE (high temperature operating endurancetest)

ISO 16750-4
IEC 60068-2-2 Bd

1000 h; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles; offset
monitoredThermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak), 1000 cycles,with connectors => 667 h (28 days)

High temperature and humidity endurance

JESD22-A101

1000 hours; 85 °C / 85 % HR; power ON; Monitored once aday
Accuracy criteria: X < 3% @ 25 °C, @ IP max CH1
Accuracy criteria: X < 3% @ 25 °C, @ IP max CH2Salt fog

IEC 60068-2-11

96 h @ 35 °C , 5 % of salt water solution, characterization
before and after test only at 25 °C and UC nominal−40 °C, 240 hours; no power supply

Mechanical tests
ISO 16750-3 § 4.1.2.4
mass suspended

Vibration in temperatureContinuous monitoring: offset

ShocksISO 16750-3§ 4.2

Power ON. Profile 1 (500 m⋅s-2; 11 ms) 10 shocks per axe
Half sinusoidal pulse

Free Fall test

ISO 16750-3

3 axis, 2 directions by axis; 1 sample per axis; 1 m.; concretefloor

EMC test
BCI (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100 V/m (rms); from 400 M to 1 GHz
Functional class: A
Level: 70 V/m (rms) from 1 G to 2 GHz
Functional class: AEmission

CISPR 25

IEC 61000-4-2 +ISO 10605(07/2008)

ESD not supplied

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests
Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement forceGMW 3191 § 4.14

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