AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/158

Picture of product with pencil

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between the
primary circuit (high power) and the secondary circuit (electroniccircuit).
The DHAB family gives you a choice of having different
current measuring ranges in the same housing (from ±20 up to±900 A).

●● Battery Pack MonitoringFeatures●● Open Loop transducer using the Hall effect●● Low voltage application●● Unipolar +5 V DC power supply●● Hybrid Vehicles●● EV and Utility Vehicles.

Principle of DHAB family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportional
to:B (IP) = constant (a) × IP●● Primary current measuring range up to ±100 A for channel 1and −1000 A to +500 A for channel 2

The Hall voltage is thus expressed by:●● Maximum RMS primary admissible current: defined bybusbar to have T° < +150 °C

With d = thickness of the hall plates●● Operating temperature range: −40 °C < T° < +125 °C●● Output voltage: full ratio-metric (in sensitivity and offset).

VH = (Hall coefficient / d) × I × constant (a) × IP
I = current across the Hall plates

Except for IP, all terms of this equation are constant.
Therefore:
VH = constant (b) × IP

Special feature●● Dual channel sensor for wider measurement range andredundancy.

The measurement signal VH amplified to supply the user output
voltage or current.

Advantages●● Good accuracy for high and low current range●● Good linearity●● Low thermal offset drift●● Low thermal sensitivity drift●● Hermetic package.
Fig. 1: Principle of the open loop transducer

97.B6.99.158.0
15July2016/version 2

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DHAB S/158
Dimensions (in mm)

IPVoutVoutUC

Mechanical characteristics●● Plastic case

>PBT-GF30<●● Magnetic core

Channel 1: FeNi alloy			

Channel 2: FeSi alloy●● Electrical terminal coating Brass tin plated●● Mass		82 g●● Degrees of protection provided by enclosure IP6K9K

System architecture (example)
LEM - DHAB sensor.
+5V●● Max assembly torque

TYCO 1-1456426-5
2.5 N⋅m (for M4 × 0.7)●● Clamping force must be applied on the compression limiter

Remark●● Vout > Vo when IP flows in the positive direction(see arrow on drawing).

Typical application +5V
Schematic interface.

47 nF

100 nF

GndGndIPM
Primarycurrent

Channel 1

CL68 nF
Gnd

Mounting recommendation●● Mating connector P/N

UC

R

RL

Gnd

Gnd GndChannel 2

CL

68 nF

Gnd
Gnd

CR

RL

Gnd Gnd

CGnd

RL > 10 kW optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)

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DHAB S/158

Absolute ratings (not operating)Parameter

SymbolUnitMinSpecification
TypicalConditions

Max

Maximun supply voltage

UCV

−1414

Ambient storage temperature

TS°C

−40

125

Electrostatic discharge voltage

UESDkV8

IEC 61000-4-2 - ISO 10605

Rms voltage for AC insulation test, 50 Hz, 1 minUdkV

2.5

ISO 16750-2

Creepage distancedCpmmmm

Clearance

dCI

Comparative tracking index

CTI

Maximum output current

Iout

3.1
3.1
PLC3

Maximum output voltage (Analog)

mA−1010ContinuousV−1414

Output over voltage,1 min @ TA= 25 °C

500

Insulation resistance

RISMΩ

Output short circuit maximum durationtcs

500 V DC, ISO 16750-2∞

Operating characteristics in nominal range (IPN)
Parameter

SymbolSpecification
Min
TypicalElectrical Data

Unit

Supply voltage 1)

UCV

Current consumption

ICmA

Maximum output current

IoutmA−1

Load resistance

RL

ΚΩ

10

Capacitive loading

CLnF

Ambient operating temperature°C

TA

4.75

Conditions

Max

55.25

15201

1100

−1065

High accuracy−40125

Reduced accuracy

Performance Data channel 1Primary current, measuring range

IPM channel 1

A−100

Primary nominal DC or rms current

IPN channel 1

A−100Offset voltage

VOVSensitivity

G100100@TA = 25 °C

2.5@ UC = 5 V@ UC = 5 V

mV/A

20

Resolution

mV

1.25

Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 V

V

4.7@ UC = 5 V

VSZ@ UC = 5 V

4.75

4.8

Output internal resistance

Rout

Ω

110

Frequency bandwidth 2)

BWkHz

1.1

Output clamping voltage max 1)

Power up time

msSetting time after overloadmsRatiometricity errorεr

Output voltage noise peak-peakVno pp@ −3 dB1
10%−0.6

0.6

mV−1010

Performance Data channel 2
Primary current, measuring range

IPM channel 2

A−1000Primary nominal DC or rms current

IPN channel 2

A−1000

Offset voltage

VOV

3.167

@ UC = 5 V

Sensitivity

G@ UC = 5 V

500
500

@ TA = 25 °C

mV/A

2.67

Resolution

mV

1.25

Output clamping voltage min 1)

V

0.2

0.25

0.3

@ UC = 5 VV

4.7

@ UC = 5 V

VSZ

Output clamping voltage max 1)@ UC = 5 V4.75

4.8

Output internal resistanceRoutΩ110Frequency bandwidth 2)

BWkHz

1.1

Power up timems

@ −3 dB
1

Setting time after overloadts

ms

Ratiometricity error

εr%

−0.6

0.6

Vno ppmV−1010Output voltage noise peak-peakNotes:1)

The output voltage Vout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:
IP = (2)1051
× Vout − VO) ×with G in (V/A)
UCG

Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC
(see feature paragraph in page 1.)

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DHAB S/158
Accuracy
Channel 1
Parameter

SymbolUnit

Electrical offset current

IOE

AMagnetic offset current

IOM

AMin
Electrical Data

IO

Offset current

Sensitiviy error@ TA = 25 °C±0.03@ TA = 25 °C−0.150.15@ TA = 25 °C−0.260.26@ −10 °C < T° < 65 °C−0.350.35%%

εLConditions

Max±0.07AεG

Linearity error

Specification
Typical@ −40 °C < T° < 125 °C±0.4@ TA = 25 °C±1.0@ −10 °C < T° < 65 °C±1.5@ −40 °C < T° < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of full range

Accuracy table
Parameter

SymbolUnit

Accuracy @ 0 A
Accuracy @ ±50A

X

A

Accuracy @ ±100 A

Temperature−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

0.35

0.29

0.23

0.15

0.23

0.35

1.50

1.25

1.01

0.70

1.021.50

3.75

2.98

2.21

1.25

2.25

3.75

DHAB S/158 Channel 1: Absolute Accuracy X (A)4.00

Absolute accuracy (A)

3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00

-40

-20020

4060

80

100

120

140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±50A

Accuracy @ ±100A
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DHAB S/158
Accuracy
Channel 2Parameter

Specification
TypicalSymbol

Unit

Electrical offset current

IOEA±0.7@ TA= 25 °C

Magnetic offset current

IOMA±0.3@ TA= 25 °C

Offset current

IOASensitiviy error−33@ TA= 25 °C

3.8@ −10 °C < T° < 65 °C−4.54.5@ −40 °C < T° < 125 °C%

εLConditions

Max−3.8%

εG

Linearity error

MinElectrical Data

±0.4

@ TA = 25 °C±0.8@ −10 °C < T° < 65 °C±1.2@ −40 °C < T° < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of fullrange

Accuracy table
Parameter

SymbolUnitTemperature−40 °C−20 °C0 °C25 °C

65 °C

125 °C

4.5

4.0

3.6

3.0

3.6

4.5

22.0

18.0

14.0

9.0

14.2

22.0

44.0

36.6

29.2

20.0

29.6

44.0

Accuracy @ 0 A
Accuracy @ ±500 AXA

Accuracy @ −1000 A

DHAB S/158 Channel 2: Absolute Accuracy X (A)50.0

Absolute accuracy (A)

45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0

-40

-200

2040

60

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±500A

Accuracy @ -1000APage 5/715July2016/version 2

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DHAB S/158
PERFORMANCES PARAMETERS DEFINITIONS

Sensitivity:

Primary current definition:

The transducer’s sensitivity G is the slope of the straight line
Vout = f (IP), it must establish the relation:

Vout

Primary current nominal (IPN)
Primary current, measuring range (IPM)

Vout (IP) = UC/5 (G × IP + Vo)

Offset with temperature:
I [A]

IT

90 %

Definition of typical, minimum and maximumvalues:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:
The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

Magnetic offset:
The magnetic offset is the consequence of an over-current onthe primary side. It’s defined after an excursion of IPN.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Vout = f (IP).
Unit: linearity (%) expressed with full scale of IPN.

Response time (delay time) tr:
The time between the primary current signal (IPN) and theoutput signal reach at 90 % of its final value.
VoutVoutIPIP

Non linearity example

trt [µs]

The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IOT is a maximum variation the offset in thetemperature range:
IOT = IOE max − IOE min

The offset drift TCIOEAV is the IOT value divided by the temperaturerange.

Sensitivity with temperature:
The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation GT is the maximum variation (in ppm or%) of the sensitivity in the temperature range:
GT = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCGAV is the GT value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary
current is zero. The ideal value of VO is UC/2 at UC = 5 V. So,
the difference of VO − UC/2 is called the total offset voltage error.
This offset error can be attributed to the electrical offset (dueto the resolution of the ASIC quiescent voltage trimming), themagnetic offset, the thermal drift and the thermal hysteresis.
Deeper and detailed info available is our LEM technical sales
offices (www.lem.com).

Referencestraight line
Max linearity error
IPLinearity variation in IPN

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DHAB S/158
Environmental test specifications:
NameStandardConditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4IEC 60068-2-1 Ad−40 °C, 240 h; power ON

HTOE (high temperature operating endurancetest)

ISO 16750-4
IEC 60068-2-2 Bd

1000 h; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles; offset
monitored

Thermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak), 1000 cycles,with connectors => 667 h (28 days)

High temperature and humidity endurance

JESD22-A101

1000 H; 85 °C / 85 % HR; power ON; Monitored once a dayAccuracy criteria: X < 3% @ 25 °C, @ IP max CH1
Accuracy criteria: X < 3% @ 25 °C, @ IP max CH2Salt fog

IEC 60068-2-11

96 h @ 35 °C , 5 % of salt water solution, characterization
before and after test only at 25 °C and UC nominal−40 °C, 240 h; no power supply

Mechanical tests
ISO 16750-3 § 4.1.2.4
mass suspended

Vibration in temperatureContinuous monitoring: offset

ShocksISO 16750-3§ 4.2

Power ON. Profile 1 (500 m⋅s-2; 11 ms) 10 shocks per axe
Half sinusoidal pulse

Free Fall testISO 16750-3

3 axis, 2 directions by axis; 1 sample per axis; 1 m.; concretefloor

EMC test
BCI (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100V/m (rms); from 400 M to 1 GHz Functional class: A
Level: 70V/m (rms) from 1 G to 2 GHz Functional class: AEmission

CISPR 25IEC 61000-4-2 +ISO 10605(07/2008)

ESD not supplied

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests
Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14

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