Power MOSFET Module

SHD4101

Data Sheet

Description

Package

The SHD4101 includes four elements (two each of
single and dual fast recovery diodes, two N-channel
power MOSFETs) in its small HSON package. Theinternal power MOSFETs have Zener diodes between
gates and sources, thus requiring no externally clamped
circuit for an injection coil drive circuit. Supplied in a
low thermal resistance package, the product achieves
high performance in heat dissipation.

● HSON-20

Not to scale

Features● Suitable for High Reliability and Automotive
Requirement● AEC-Q101 Qualified● Bare Lead Frame: Pb-free (RoHS Compliant)● Built-in Zener Diodes between Gates and Sources● Specifications
D1: Single Fast Recovery Diode (200 V, 5 A)
D2, D3: Dual Fast Recovery Diodes (200 V, 3 A)
Q1: N-channel Power MOSFET (100 V, 10 A)
Q2: N-channel Power MOSFET (40 V, 10 A)

Internal Schematic Diagram
D D
14 13

D D
12 11

G 15

10 G

D 16

Q2

9 D

Q1

S 17

8 S

NC 18

Typical Application

D2

C 19

● Solenoid Injection System

A 20

D3

D1

1 2
C C
SHD4101

7 A
6 C
5 A

3 4
C C

A: Diode Anode
C: Diode CathodeD: Power MOSFET Drain
S: Power MOSFET Source
G: Power MOSFET Gate
NC: No Connection

DC/DC
Control

Applications
SHD4102● Injection Coil Driver Circuits

SHD4101-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2016

1

SHD4101
Contents
Description ------------------------------------------------------------------------------------------------------ 1
Contents --------------------------------------------------------------------------------------------------------- 2
1. Absolute Maximum Ratings (Common to All Elements) ------------------------------------------ 3
2. Thermal Characteristics --------------------------------------------------------------------------------- 3
3. Absolute Maximum Ratings and Electrical Characteristics -------------------------------------- 4
3.1. D1 (200 V, 5 A Fast Recovery Diode) ------------------------------------------------------------ 4
3.1.1. Absolute Maximum Ratings ----------------------------------------------------------------- 4
3.1.2. Electrical Characteristics -------------------------------------------------------------------- 4
3.1.3. Characteristic Curves ------------------------------------------------------------------------ 5
3.2. D2, D3 (200 V, 3 A Fast Recovery Diodes) ----------------------------------------------------- 6
3.2.1. Absolute Maximum Ratings ----------------------------------------------------------------- 6
3.2.2. Electrical Characteristics -------------------------------------------------------------------- 6
3.2.3. Characteristic Curves ------------------------------------------------------------------------ 6
3.3. Q1 (100 V, 10 A Power MOSFET) --------------------------------------------------------------- 8
3.3.1. Absolute Maximum Ratings ----------------------------------------------------------------- 8
3.3.2. Electrical Characteristics -------------------------------------------------------------------- 8
3.3.3. Derating Curves ------------------------------------------------------------------------------- 9
3.3.4. Characteristic Curves ------------------------------------------------------------------------ 9
3.4. Q2 (40 V, 10 A Power MOSFET) -------------------------------------------------------------- 13
3.4.1. Absolute Maximum Ratings --------------------------------------------------------------- 13
3.4.2. Electrical Characteristics ------------------------------------------------------------------ 13
3.4.3. Derating Curves ----------------------------------------------------------------------------- 14
3.4.4. Characteristic Curves ---------------------------------------------------------------------- 15
4. Internal Schematic Diagram -------------------------------------------------------------------------- 20
5. Pin Configuration Definitions ------------------------------------------------------------------------- 20
6. Physical Dimensions ------------------------------------------------------------------------------------ 21
6.1. HSON-20 Package--------------------------------------------------------------------------------- 21
6.2. HSON-20 Land Pattern Example -------------------------------------------------------------- 22
7. Marking Diagram --------------------------------------------------------------------------------------- 22
Important Notes ---------------------------------------------------------------------------------------------- 23

SHD4101-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 2016

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SHD41011.

Absolute Maximum Ratings (Common to All Elements)
Parameter

SymbolConditions
TC = 25 °C, all elements operating;
mounted on an FR4 board

Power Dissipation(26 mm × 36 mm × 1.66 mm);see Figure 1-1

PD

TC = 25 °C, all elements operating;with an infinite heatsink;see Figure 1-1

Rating

Unit

1.7

W

80

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG− 55 to 150°C100
With infinite heatsink

Power Dissipation, PD (W)

80

60

40

20
FR4 (26mm×36mm×1.66mm)

0
0

25

50

75

100

125

150

Case Temperature, TC (°C)
Figure 1-1.

2.

PD vs. TC (All Elements Operating)

Thermal Characteristics

Parameter
Thermal Resistance(Junction-to-Case)

SymbolConditions

Min.

Typ.

Max.

Unit

RθJC

TC = 25 °C, all elements operating;with an infinite heatsink

—

—

6.25

°C/W

SHD4101-DSE Rev.1.1
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SHD4101
3.

Absolute Maximum Ratings and Electrical Characteristics

3.1.

D1 (200 V, 5 A Fast Recovery Diode)3.1.1. Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Rating

Unit

Nonrepetitive Peak Reverse Voltage

VRSM

200

V

Repetitive Peak Reverse Voltage

VRM

200

V

Average Forward Current

IF(AV)

5

A

30

A

4.5

A2s

Surge Forward Current

IFSM

I2t Limiting Value

I2t

Half cycle sine wave,
positive side, 10 ms, 1 shott ≤ 30 μs, duty cycle ≤ 1%

3.1.2. Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

Forward Voltage DropVF

TJ = 25 °C, IF = 5 A

—

—

1

V

Reverse Leakage Current
Reverse Leakage Current
under High Temperature

IR

VR = VRM

—

—

50

µA

H∙IR

VR = VRM, TJ = 150 °C

—

—

300

µA

trr

IF = IRP = 100 mA,
90% recovery point,
TJ = 25 °C

—

—

50

ns

Reverse Recovery Time

SHD4101-DSE Rev.1.1
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SHD4101
3.1.3. Characteristic Curves
1.E-04
10

Reverse Current, IR (A)Forward Current, IF (A)

1.E-05
TJ = 150 °C

1

TJ = 75 °C

0.1

TJ = 25 °C

0.01

TJ = 150 °C
TJ = 125 °C

1.E-06

1.E-07
TJ = 75 °C

1.E-08
TJ = 25 °C

1.E-09

0.001
0.0

0.5

1.0

0

1.5

100

150

200

Reverse Voltage, VR (V)Forward Voltage, VF (V)Figure 3-1.

50

D1 Typical Characteristics:
IF vs. VF

Figure 3-2.

D1 Typical Characteristics:
IR vs. VR

Junction–Case Thermal Resistance(°C/W)

10

1

0.1

0.01

100 μ

1m

10 m

100 m

1

10

Time (s)Figure 3-3.

D1 Transient Thermal Resistance Characteristic (Single Pulse, TC = 25 °C)

SHD4101-DSE Rev.1.1
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SHD4101
3.2.

D2, D3 (200 V, 3 A Fast Recovery Diodes)

3.2.1. Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

RatingUnit

Peak Repetitive Reverse Voltage

VRSM

200

V

Repetitive Reverse Voltage

VRM

200

V

Average Forward Current

IF(AV)

3

A

Surge Forward Current

IFSM

30

A

I2t Limiting Value

I2t

4.5

A2s

Half cycle sine wave,
positive side, 10 ms, 1 shott ≤ 30 μs, duty cycle ≤ 1%

3.2.2. Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

Forward Voltage DropVF

TJ = 25 °C, IF = 3 A

—

—

1

V

Reverse Leakage Current
Reverse Leakage Current
under High Temperature

IR

VR = VRM

—

—

50

µA

H∙IR

VR = VRM, TJ = 150 °C

—

—

300

µA

trr

IF = IRP = 100 mA,
90% recovery point,
TJ = 25 °C

—

—

50

ns

Reverse Recovery Time3.2.3. Characteristic Curves
1.E-04
10
TJ = 150 °C

Reverse Current, IR (A)Forward Current, IF (A)

1.E-05
TJ = 150 °C

1

TJ = 75 °C

0.1

TJ = 25 °C

0.01

TJ = 125 °C

1.E-06

1.E-07
TJ = 75 °C

1.E-08
TJ = 25 °C

1.E-09

0.001
0.0

0.5

1.0

1.5

0

D2, D3 Typical Characteristics:
IF vs. VF

100

150

200

Reverse Voltage, VR (V)Forward Voltage, VF (V)Figure 3-4.

50

Figure 3-5.

SHD4101-DSE Rev.1.1
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D2, D3 Typical Characteristics:
IR vs. VR

6

SHD4101

Junction–Case Thermal Resistance(°C/W)

10

1

0.1

0.01

100 μ

1m

10 m

100 m

1

10

Time (s)Figure 3-6.

D2, D3 Transient Thermal Resistance Characteristic (Single Pulse, TC = 25 °C)

SHD4101-DSE Rev.1.1
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SHD4101
3.3.

Q1 (100 V, 10 A Power MOSFET)

3.3.1. Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Rating

Unit

Drain-to-Source Voltage

VDS

100

V

Gate-to-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

TC = 25 °C

10A

Pulsed Drain CurrentIDMt ≤ 30 µs, duty cycle ≤ 1 %30

AAvalanche Energy

EAS

Single pulse, VDD = 14 V,
L = 1.08 mH, ID = 10 A,
unclamped, RG = 50 Ω;
see Figure 3-35

62.5

mJ

Avalanche Current

IAS

10

A

Maximum Drain-to-Source dv/dt

dv/dt1

See Figure 3-35

0.6

V/ns

Maximum Diode Recovery dv/dt

dv/dt2

See Figure 3-36

5

V/ns

Maximum Diode Recovery di/dt

di/dt

See Figure 3-36

100

A/µs

3.3.2. Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID = 100 μA, VGS = 0 V

100

—

—

V

Drain-to-Source Leakage Current

IDSS

VDS = 100 V, VGS = 0 V

—

—

100

µA

Gate-to-Source Leakage Current

IGSS

VGS = ± 15 V

—

—

± 10

µA

Gate Threshold Voltage

VGS(TH)VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

V

Static Drain-to-Source On-resistanceRDS(ON)

ID = 5 A, VGS = 10 V

—

38

50

mΩ

—

2200

—

—

210

—

—

110

—

—

45

—

—

6

—

—

10

—

—

30

—

—

40

—

—

160

—

—

80

—

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

QG

Gate-to-Source Charge

QGS

Gate-to-Drain Charge

QGD

Turn-on Delay Timetd(ON)

Turn-on Rise Timetr

Turn-off Delay Timetd(OFF)

Turn-off Fall Time
Source-to-Drain Diode Forward
Voltage Drop
Source-to-Drain Diode Reverse
Recovery TimeVDS = 10 V,
VGS = 0 V,
f = 1 MHzVDD = 50 V,
ID = 5 A,
VGS = 10 V,
RL = 10 Ω

pF

nC

tf

VDD = 50 V,
ID = 5 A,
VGS = 10 V, RG = 20 Ω,
RL = 10 Ω;
see Figure 3-37

VSD

IS = 10 A, VGS = 0 V

—

—

1.2

V

trr

IF = 10 A,
di/dt = 100 A/µs;
see Figure 3-36

—

50

—

ns

SHD4101-DSE Rev.1.1
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SHD4101
3.3.3. Derating Curves
70

Avalanche Energy, EAS (mJ)

12

Drain Current, ID (A)

10

8

6

4

60
50
40
30
20

2

10

0

0
0

25

50

75

100

125

25

150

50

Case Temperature, TC (°C)
Figure 3-7.

75

100

125

150

Junction Temperature, TJ (°C)

Q1 ID vs. TC

Figure 3-8.

Q1 EAS vs. TJ (Single Pulse)

3.3.4. Characteristic Curves
100

20
VGS = 10 V
VGS = 4.5 V

15

1 ms

Drain Current, ID (A)Drain Current, ID (A)100 µs101

VGS = 3.5 V

10

VGS = 3.0 V

5

0.1

0
1

10

100

Drain–Source Voltage, VDS (V)Figure 3-9. Q1 Safe Operating Area
(Single Pulse, TJ = 25 °C)

1000

0

0.5

1

1.5

Drain–Source Voltage, VDS (V)Figure 3-10. Q1 Typical Characteristics:
ID vs. VDS (TJ = 25 °C)

SHD4101-DSE Rev.1.1
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SHD4101

2.5

Gate Threshold Voltage, VGS(TH) (V)Drain Current, ID (A)

20

15

10
TJ = 150 °C
TJ = 25 °C

5

TJ = −55 °C

0
0

1

2

3

4

2

1.5

1

0.5
-100

5

0

50

100

150

200

Junction Temperature, TJ (°C)

Gate–Source Voltage, VGS (V)Figure 3-11. Q1 Typical Characteristics:
ID vs. VGS (VDS = 10 V)

Figure 3-12. Q1 Typical Characteristic:
VGS(TH) vs. TJ (VDS = 10 V, ID = 1 mA)

60

100

Drain–Source On-resistance, RDS (ON) (mΩ)

Drain–Source On-resistance, RDS (ON) (mΩ）

-50

50

40

30

20

10

0
0

5

10

15

20

80

60

40

20

0
-100

0

50

100

150

200

Junction Temperature, TJ (°C)

Drain Current, ID (A)Figure 3-13. Q1 Typical Characteristic:RDS(ON) vs. ID (VGS = 10 V, TJ = 25 °C)-50

Figure 3-14. Q1 Typical Characteristic:RDS(ON) vs. TJ (VGS = 10 V, ID = 5 A)

SHD4101-DSE Rev.1.1
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SHD4101

20

10000

15
1000

Capacitance (pF)

Source–Drain Current, ISD (A)

Ciss

10
TJ = 150 °C
TJ = 25 °C

Coss
100

5

Crss

TJ = −55 °C

10

0
0

0.5

1

0

1.5

10

20

30

40

50

Source–Drain Diode Forward Voltage Drop, VSD (V)Figure 3-15. Q1 Typical Characteristics:
ISD vs. VSD (VGS = 0 V)

Figure 3-16. Q1 Typical Characteristics:
Capacitance vs. VDS (f = 1 MHz, VGS = 0 V)

140

10

Gate–Source Voltage, VGS (V)Drain–Source Breakdown Voltage, V(BR)DSS (V)Drain–Source Voltage, VDS (V)

130

120

110

100

90
-100

8

6

4

2

0
-50

0

50

100

150

200

0

Junction Temperature, TJ (°C)
Figure 3-17. Q1 Typical Characteristic:
Q1 V(BR)DSS vs. TJ (ID = 10 mA, VGS = 0 V)

10

20

30

40

50

Total Gate Charge, QG (nC)
Figure 3-18. Q1 Typical Characteristic:
VGS vs. QG (ID = 5 A, VDD ≈ 50 V)

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SHD4101

Drain–Source Voltage, VDS (V)

1

0.8

0.6
ID = 10 A

0.4
ID = 5 A

0.2

0
0

5

10

15

20

Gate–Source Voltage, VGS (V)Figure 3-19. Q1 Typical Characteristics:
VDS vs. VGS (VDS = 10 V)

Junction–Case Thermal Resistance(°C/W)

10

1

0.1

0.01

100 μ

1m

10 m

100 m

1

10

Time (s)Figure 3-20.

Q1 Transient Thermal Resistance Characteristic (Single Pulse, VDS < 10 V)

SHD4101-DSE Rev.1.1
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SHD4101
3.4.

Q2 (40 V, 10 A Power MOSFET)

3.4.1. Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Rating

Unit

Drain-to-Source Voltage

VDS

40

V

Gate-to-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

TC = 25 °C

10A

Pulsed Drain CurrentIDMt ≤ 30 µs, duty cycle ≤ 1 %30

AAvalanche Energy

EAS

Single pulse, VDD = 14 V,
L = 0.4 mH, ID = 10 A,
unclamped, RG = 50 Ω;
see Figure 3-35

30.5

mJ

Avalanche Current

IAS

10

A

Drain-to-Source dv/dt

dv/dt1

See Figure 3-35

0.2

V/ns

Peak Diode Recovery dv/dt

dv/dt2

See Figure 3-36

2

V/ns

Peak Diode Recovery di/dt

di/dt

See Figure 3-36

100

A/µs

3.4.2. Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
SymbolConditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID = 100 μA, VGS = 0 V

40

—

—

V

Drain-to-Source Leakage Current

IDSS

VDS = 40V, VGS = 0 V

—

—

100

µA

Gate-to-Source Leakage Current

IGSS

VGS = ± 15 V

—

—

± 10

µA

Gate Threshold Voltage

VGS(TH)VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

V

Static Drain to Source On-resistanceRDS(ON)

ID = 5 A, VGS = 10 V

—

15

21

mΩ

—

1200

—

—

310

—

—

170

—

—

25

—

—

3

—

—

6

—

—

15

—

—

35

—

—

100

—

—

50

—

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

QG

Gate-to-Source Charge

QGS

Gate-to-Drain Charge

QGD

Turn-on Delay Timetd(ON)

Turn-on Rise Timetr

Turn-off Delay Timetd(OFF)

Turn-off Fall Time
Source-to-Drain Diode Forward
Voltage Drop
Source-to-Drain Diode Reverse
Recovery TimeVDS = 10 V,
VGS = 0 V,
f = 1 MHzVDD = 20 V,
ID = 5 A,
VGS = 10 V,
RL = 4 Ω

pF

nC

tf

VDD = 20 V,
ID = 5 A,
VGS = 10 V, RG = 20 Ω,
RL = 4 Ω;
see Figure 3-37

VSD

IS = 10 A, VGS = 0 V

—

—

1.2

V

trr

IF = 10 A,
di/dt = 100 A/µs;
see Figure 3-36

—

50

—

ns

SHD4101-DSE Rev.1.1
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SHD4101
3.4.3. Derating Curves
35

Avalanche Energy, EAS (mJ)

12

Drain Current, ID (A)

10

8

6

4

30
25
20
15
10

2

5

0

0
0

25

50

75

100

125

150

25

Case Temperature, TC (°C)
Figure 3-21.

Q2 ID vs. TC

50

75

100

125

150

Junction Temperature, TJ (°C)
Figure 3-22.

SHD4101-DSE Rev.1.1
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Q2 EAS vs. TJ (Single Pulse)

14

SHD4101
3.4.4. Characteristic Curves
100

20

VGS = 10 V
VGS = 4.0 V
VGS = 3.6 V

15

1 ms

Drain Current, ID (A)Drain Current, ID (A)100 µs101

VGS = 3.4 V
VGS = 3.2 V

10

VGS = 3.0 V

5

0.1

0
1

10

100

0

1

1.5

Drain–Source Voltage, VDS (V)Drain–Source Voltage, VDS (V)Figure 3-23. Q2 Safe Operating Area
(Single Pulse, TJ = 25 °C)

Figure 3-24. Q2 Typical Characteristics:
ID vs. VDS (TJ = 25 °C)

3

15

10

TJ = 150 °C

5

TJ = 25 °C
TJ = −55 °C

0
0

1

2

3

4

5

Gate Threshold Voltage,VGS(TH) (V)20

Drain Current, ID (A)

0.5

2.5

2

1.5

1
-100

-50

0

50

100

150

Gate–Source Voltage, VGS (V)Junction Temperature, TJ (°C)

Figure 3-25. Q2 Typical Characteristics:
ID vs. VGS (VDS = 10 V)

Figure 3-26. Q2 Typical Characteristic:
VGS(TH) vs. TJ (VDS = 10 V, ID = 1 mA)

SHD4101-DSE Rev.1.1
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200

15

SHD4101

40

Drain–Source On-resistance, RDS (ON) (mΩ)

Drain–Source On-resistance, RDS (ON) (mΩ）

25

20

15

10

5

0
0

5

10

15

30

20

10

0
-100

20

0

50

100

150

200

Junction Temperature, TJ (°C)

Drain Current, ID (A)Figure 3-27. Q2 Typical Characteristic:RDS(ON) vs. ID (VGS = 10 V, TJ = 25 °C)

Figure 3-28. Q2 Typical Characteristic:RDS(ON) vs. TJ (VGS = 10 V, ID = 5 A)

20

10000

Ciss

15
1000

Capacitance (pF)

Source–Drain Diode Forward Current, IS (A)-50

10TJ = 150 °C
TJ = 25 °C

Coss

100

Crss

5
TJ = −55 °C

10

0
0

0.5

1

1.5

0

Source–Drain Diode Forward Voltage Drop, VSD (V)Figure 3-29. Q2 Typical Characteristics:
IS vs. VSD (VGS = 0 V)

10

20

30

40

Drain–Source Voltage, VDS (V)Figure 3-30. Q2 Typical Characteristics:
Capacitance vs. VDS (f = 1 MHz, VGS = 0 V)

SHD4101-DSE Rev.1.1
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SHD4101

1055

Gate–Source Voltage, VGS (V)Drain–Source Breakdown Voltage,V(BR)DSS (V)

60

50

45

40

35

30
-100

8

6

4

2

0
-50

0

50

100

150

200

0

Junction Temperature, TJ (°C)

5

10

15

20

25

Total Gate Charge, QG (nC)

Figure 3-31. Q2 Typical Characteristic:
Q1 V(BR)DSS vs. TJ (ID = 10 mA, VGS = 0 V)

Figure 3-32. Q2 Typical Characteristic:
VGS vs. QG (ID = 5 A, VDD ≈ 20 V)

Drain–Source Voltage, VDS (V)

1

0.8

0.6

0.4
ID = 10A

0.2

ID = 5A

0
0

5

10

15

20

Gate–Source Voltage, VGS (V)Figure 3-33. Q2 Typical Characteristics:
VDS vs. VGS (VDS = 10 V)

SHD4101-DSE Rev.1.1
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SHD4101

Junction–Case Thermal Resistance(°C/W)

10

1

0.1

0.01

100 μ

1m

10 m

100 m

1

10

Time (s)Figure 3-34.

Q2 Transient Thermal Resistance (Single Pulse, VDS < 10 V)

SHD4101-DSE Rev.1.1
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SHD4101

VDS

EAS =

V(BR)DSS

V(BR)DSS
1× L × IAS 2 ×
2
V(BR)DSS − VDD

dv/dt 1

L

VDD

ID
t

VDS

ID

RG

IAS

VDD

VGS

0V
t

(a) Test Circuit(b) Waveforms
Figure 3-35.

Avalanche Energy and dv/dt1 Test

IF

trr

D.U.T.
L

IF

0

IRM × 90 %

di/dt

VDD
IRM
VDD

RG
VSD

dv/dt 2VGS
0V0(a) Test Circuit(b) Waveforms

Figure 3-36.

Diode Reverse Recovery Time Test

RL

VGS

RG

VDD

0V

10%

0

VDS
VGS

90%

VDS

90%

10%

0

P.W. = 10 μs
Duty cycle ≤ 1 %td(on) tr

td(off) tf

ton

toff

(a) Test Circuit
Figure 3-37.

(b) Waveforms
Resistive Load Switching Time Test

SHD4101-DSE Rev.1.1
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19

SHD4101
4.

Internal Schematic Diagram
D D
14 13

D D
12 11

G 15

10 G

D 16

Q2

9 D

Q1

S 17

8 S

NC 18
D2

C 19
A 20

D3

D1

1 2
C C

5.

7 A
6 C
5 A

3 4
C C

Pin Configuration Definitions
14

13

12

11

11

12

13

14

15
16
17

10
9
8

10
9
8

15
16
17

18
19
20

7
6
5

7
6
5

18
19
20

1

2

3

Pin Number

4
Description

4

3

Pin Number

2

Description

1

D1 cathode11

Q1 drain2

D1 cathode12

Q1 drain3

D2, D3 cathode13

Q2 drain

4

D2, D3 cathode14

Q2 drain5

D2, D3 anode15

Q2 gate6

D2, D3 cathode16

Q2 drain7

D2, D3 anode17

Q2 source

8

Q1 source18

No connection

9

Q1 drain19

D1 cathode10

Q1 gate20

D1 anode

SHD4101-DSE Rev.1.1
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1

20

SHD4101
6.

Physical Dimensions

6.1.

HSON-20 Package
11.9±0.2* 0.4

9.1 ±0.2
1.5
0.8

0.4

0.8

0.5 (min.)

*

*

*

3.3

3.3

*

5.6
0.8

*

0.7

0.4

0.8

0.8

3.3

3.6

0.7

3.3

0.5 (min.)

0.55 (min.)

* 0.4

2.14

0.55 (min.)4.68

0.55 (min.)* 0.4

0.55 (min.)* 0.4

0.25 ±0.05

8.5 ±0.2

11.3±0.2*

NOTES:- Dimensions in millimeters- Bare lead frame: Pb-free (RoHS compliant)- Dimensions with the asterisks do not include any mold flash.
depicts the area where one or more mold flashes similar in thickness to that of the frame may exist.
- Dimensions without tolerances have a tolerance of ±0.1.
- Moisture Sensitivity Level 3 (MSL 3)- When soldering the products, it is required to minimize the working time within the following limits:
ReflowPreheat: 150 °C to 200 °C / 60 s to 120 s
Solder heating: 255 °C / 30s, 3 times (260 °C peak)
Soldering iron: 350 °C / 3.5 s, 1 time
- The following pins are not guaranteed to be connected by soldering: 6, 9, 16, and 19.

SHD4101-DSE Rev.1.1
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SHD4101

6.3

5.05

3.75

2.84

2.24

1.57

0.97

−0.35
0
0.35

−0.97

−1.57

−2.24

−2.84

−3.75

−5.05

HSON-20 Land Pattern Example
−6.3

6.2.

4.9
3.75
3.73
2.67

1.33
0.35
0.27
0
−0.27
−0.35
−1.33

−2.67
−3.73
−3.75

−4.9

NOTE:
- Dimensions in millimeters

7.

Marking Diagram

SHD4101
Y MD DX

Pin 1 indicatorPart Number
Lot Number:
Y is the last digit of the year of manufacture (0 to 9)
M is the month of the year (1 to 9, O, N, or D)
DD is the day of the month (01 to 31)
X is the control number

SHD4101-DSE Rev.1.1
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SHD4101
Important Notes● All data, illustrations, graphs, tables and any other information included in this document (the “Information”) as to Sanken’s
products listed herein (the “Sanken Products”) are current as of the date this document is issued. The Information is subject to any
change without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales
representative that the contents set forth in this document reflect the latest revisions before use.
● The Sanken Products are intended for use as components of electronic equipment or apparatus (transportation equipment and its
control systems, home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of theSanken Products, please put your signature, or affix your name and seal, on the specification documents of the Sanken Products
and return them to Sanken. If considering use of the Sanken Products for any applications that require higher reliability (traffic
signal control systems or equipment, disaster/crime alarm systems, etc.), you must contact a Sanken sales representative to discuss
the suitability of such use and put your signature, or affix your name and seal, on the specification documents of the Sanken
Products and return them to Sanken, prior to the use of the Sanken Products. The Sanken Products are not intended for use in any
applications that require extremely high reliability such as: aerospace equipment; nuclear power control systems; and medical
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responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting fromthe use of the Sanken Products in the Specific Applications or in manner not in compliance with the instructions set forth herein.
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● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid theoccurrence of any failure or defect or both in semiconductor products at a certain rate. You must take, at your own responsibility,
preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which
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Please refer to the relevant specification documents and Sanken’s official website in relation to derating.
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● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, allinformation and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference ofuse of the Sanken Products.
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the falling thereof, out of Sanken’s distribution network.
● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it iserror free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting
from any possible errors or omissions in connection with the Information.
● Please refer to our official website in relation to general instructions and directions for using the Sanken Products, and refer to therelevant specification documents in relation to particular precautions when using the Sanken Products.
● All rights and title in and to any specific trademark or tradename belong to Sanken and such original right holder(s).

DSGN-AEZ-16003

SHD4101-DSE Rev.1.1
SANKEN ELCTRIC CO., LTD.
Jul. 19, 2022
https://www.sanken-ele.co.jp/en© SANKEN ELECTRIC CO., LTD. 201623