Thursday, March 10, 2011
Opening Remarks (15:00–15:05)
15:05

I-01	[Invited] Global Model of Micro Hollow Cathode Discharges in Argon		P. Chabert, C. Lazzaroni, and A. Rousseau		

Laboratoire de Physique des Plasmas, CNRS-Ecole Polytechnique, France		
15:45

I-02	[Invited] Plasma Propagation of a 13.56 MHz Asymmetric Surface Barrier
Discharge in Atmospheric Pressure Air		J. Dedrick1, R.W. Boswell1, P. Audier2, H. Rabat2, D. Hong2, and C. Charles1		

1

The Australian National University, Australia, 2GREMI, France
Break (16:25–16:45)

16:45

O-01	Weakly Magnetized Inductively Coupled Plasma Source for 450 mm Wafer
Processing Tool		

H.-J. Lee and H.J. Lee		Pusan National University, Korea

17:05

O-02	Optimal Aspect Ratio for Multi-hollow Microwave Discharge		

I.P. Ganachev1,2 and H. Sugai2		

1

17:25

Shibaura Mechatronics Corporation, Japan, 2Chubu University, Japan

I-03	[Invited] High Speed Surface Modification with AC Excited Ultra High Density
Non-Equilibrium Atmospheric Pressure Plasma		M. Hori1,2		1

Nagoya University, Japan, 2JST-CREST, Japan
Banquet (19:00–21:00)

Friday, March 11, 2011
9:20

I-04	[Invited] Applications of MIR-Laser Absorption Techniques for Plasma
Diagnostics in Basic Research and Industry		J. Röpcke1, P.B. Davies2, S. Glitsch1, F. Hempel1, M. Hübner1, N. Lang1, D. Lopatik1,A. Rousseau3, and S. Welzel1,4		1INP Greifswald, Germany, 2University of Cambridge, UK,
LPP, Ecole Polytechnique, CNRS, France,

3

Eindhoven University of Technology, The Netherlands

410:00I-05	[Invited] Application of Remote Hydrogen Plasma to Selective Processing for
Ge-based Devices – Crystallization, Etching and Metallization		S. Miyazaki		Nagoya University, Japan
Break (10:40–11:00)

11:00

O-03	RF Waveform Tailoring to Control Film Morphology during Nanocrystalline
Silicon PECVD		

J-P Booth1, E.V. Johnson2, P-A . Delattre1, T. Verbeke1, and J-C Vanel2		1Laboratoire de Physique des Plasmas-CNRS, Ecole Polytechnique, France,
LPICM-CNRS, Ecole Polytechnique, France

2

11:20

O-04	Effect of Ion Biasing Energy on Growth of Carbon Nanomaterials at Low
Substrate Temperature Using Microwave Plasma CVD		

R.V. Bekarevich1,2, S. Miura1, Di Lu3, A. Ogino1, and M. Nagatsu1		1Shizuoka University, Japan, 2Francisk Skorina Gomel State University, Belarus,Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, China

3

11:40

O-05	Ultra Low Resistive NM Thick AZO Films Deposited by Magnetron Sputtering
Using Solid Phase Crystallization		M. Shiratani, N. Itagaki, K. Kuwahara, K. Nakahara, D. Yamashita, G. Uchida,
K. Kamataki, and K. Koga		
12:00

Kyushu University, Japan

O-06	Light-Weighted Micromirror Fabricated Using Stacked Photoresist Masks
Realized by UV Curing		

A. Hikita, T. Iwamoto, S. Kumagai, and M. Sasaki		Toyota Technological Institute, JapanLunch (12:20–14:00)

14:00I-06	[Invited] Benchmark Calculations of Atomic Data for Plasma Applications		

K. Bartschat		Drake University, USA

14:40

I-07	[Invited] New Phenomenology in Description of Townsend Discharges and Gas
Breakdown: from Standard Size to Micro discharges		Z. Lj. Petrović, D. Marić, N. Škoro, M. Savić, J. Sivoš, M. Radmilović Radˉenović,
M. Šuvakov, G. Malović
		
15:20

University of Belgrade, Serbia

O-07	Surface Roughness Formation during Si Etching in Cl2 and Cl2/O2 Plasmas:
Atomic-scale Analysis of Three-dimensional Feature Profile Evolution		H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono		

Kyoto University, Japan
Coffee Break (15:40–16:00)

Poster Session (16:00–18:00)
P-01	Generation of High Energy Electron Beams and Its Application for CathodeLuminescence Measurements of Gallium Nitride Semiconductor in InductivelyCoupled Plasmas
J.S. Gao, T. Kondou, N. Ito, Y. Nakano, K. Nakamura, and H. Sugai
Chubu University, Japan
P-02	Super-hydrophilic Properties of Titanium Dioxide Thin Film Deposited by Pulse dc
Magnetron Sputtering Plasma
S. Parajulee, S. Sharma, P. Anil, and S. Ikezawa
Chubu University, JapanP-03	A New Reconstruction Method of the Time-dependent Heat Flux from theThermocouple Data
H. Matsuura1 and K. Nagaoka2
Osaka Prefecture University, Japan, 2National Institute of Fusion Science, Japan1

P-04	Comparative Study on the Hydrophobicity Using Atmospheric Plasmas
S.-G. Cho, K.-C. Ko, J.-W. Kim, H.-J. Woo, and K.-S. Chung
Hanyang University, Korea
P-05	Helium Plasma Irradiation: A Novel Bottom-up Approach for Nanofabrication ofMetals
S. Kajita1, T. Saeki1, Y. Hirahata1, M. Yajima1, T. Yokochi1, N. Ohno1, R. Yoshihara2, N. Yoshida2
Nagoya University, Japan, 2Kyushu University, Japan1P-06	High Efficient CO2 Decomposition by Large Flow Atmospheric Microwave Plasma(LAMP)
S. Ikezawa, S. Parajulee, S. Sharma, and A. Pandey
Chubu University, JapanP-07	The Exposure of Non-thermal Atmospheric Pressure Plasma Controls theProliferation of Human Cells
J. Kim1, C.S. Ha2, Y.H. Lee2, H.J. Lee2, and K. Song1
Yonsei University, Korea, 2Pusan University, Korea

1P-08

Adsorption Property of Graphite-coated Magnetic Nanoparticles Surface-Modified byMicrowave Plasma
A. Balmakou1,2, T.E. Saraswati1, A. Ogino1, I. Semchenko2, and M. Nagatsu1
Shizuoka University, Japan, 2Francisk Skorina Gomel State University, Belarus

1P-09	RF Thermal Plasma Synthesis of Titanium Boride Nanoparticles
Y. Cheng and T. Watanabe
Tokyo Institute of Technology, Japan
P-10	Investigation of C6H6 Dissociation Process in a Microwave Plasma
K. Keyamura, T. Ishijima, and H. Toyoda
Nagoya University, Japan
P-11	Real-time/In-situ Electron-Spin-Resonance Analysis of Surface Reactions on Organic
Materials in Plasma Processes	N. Sumi1, K. Ishikawa1, A. Kono2, H. Horibe2, K. Takeda1,3, H. Kondo1, M. Sekine1,, and M.Hori1,3	1Nagoya University, Japan, 2Kanazawa Institute of Technology, Japan, 3JST-CREST, Japan
P-12	Atmospheric Pressure Deposition of ZnO Films
O.V. Penkov, H.J. Lee, S.B. Joa, and S.M. ChenJeju National University, Korea
P-13	Numerical Investigation of Bubble Formation in Solution Plasma Processing
T. Shirafuji1, K. Asano2, J. Hieda2, N. Saito2, and O. Takai2
Osaka City University, Japan, 2Nagoya University, Japan

1P-14	Measurement of SiH3 Spatial Profile in H2 /SiH4 Microwave Plasma
M. Ikeda, T. Kuroda, T. Ishijima, and H. Toyoda
Nagoya University, JapanP-15	Treatment of Flowing Organic Solution by Microwave Excited Plasma under
Reduced-Pressure Condition
K. Kanetake, T. Ishijima, and H. Toyoda
Nagoya University, JapanP-16	Spatially Resolved Measurements of Ion Density and Electron Temperature in a Dualfrequency Capacitively Coupled Plasma by Improved Double Probe Technique
W.-Q. Lu, X.-Z. Jiang, Y.-X. Liu, S. Yang, Q.-Z. Zhang, Z.-H. Bi, X.-S. Li, and Y.-N. Wang
Dalian University of Technology, China
P-17	NOx Removal Using Non-thermal Surface Plasma Discharge with a Thin Layer ofγ-alumina
J. Jolibois, K. Takashima, and A. Mizuno
Toyohashi University of Technology, Japan
P-18	Effects of Operational Parameters on Ethylene Epoxidation Using a Cylindrical
Dielectric Barrier Discharge System
T. Suttikul1, T. Sreethawong1, H. Sekiguchi2, and S. Chavadej1
Chulalongkorn University, Thailand, 2Tokyo Institute of Technology, Japan1

P-19	As-deposited TiO2 films with High Photocatalytic Activity by Atmospheric-pressure
Dielectric Barrier Discharge Plasma
D.-L. Chang, X.-S. Li, L.-B. Di, J.-H. Yang, Y. Xu, and A.-M. Zhu
Dalian University of Technology, China
P-20

Investigation of Si Etch Reaction with F and O Radicals Using SF6 /O2 Plasma	S. Amasaki1, T. Takeuchi1, K. Takeda1, K. Ishikawa1, H. Kondo1, M. Sekine1, M. Hori1, N. Sakurai2,
H. Hayashi2, I. Sakai2, and T. Ohiwa2
Nagoya University, Japan, 2Toshiba Corporation, Japan

1P-21	Effects of Plasmacluster Ion® on Moisturizing Skin and Improving Skin Elasticity andTexture
E. Nishiuchi and K. Nishikawa
Sharp Corporation, JapanP-22	Deposition of P-doped a-Si:H Films of a Low Defect Density Using SiH4+PH3
Multi-hollow Discharge Plasma CVD	K. Nakahara, Y. Kawashima, Y. Kim, M. Sato, T. Matsunaga, K. Yamamoto, D. Yamashita,
H. Matsuzaki, K. Kamataki, G. Uchida, K. Koga, and M. Shiratani
Kyushu University, Japan
P-23	Observations of Plasmas and Cavitation Bubble-like Phenomena Induced by Laser
Ablation in Supercritical Water
H. Goto1, N. Takada1, A. Kono1, and K. Sasaki2
Nagoya University, Japan, 2Hokkaido University, Japan1

P-24	Enhancement of Burning Velocity in Premixed Gas Burner Flame by the Superpositionof a Dielectric Barrier Discharge
K. Zaima1, N. Takada1, A. Kono1, and K. Sasaki2
Nagoya University, Japan, 2Hokkaido University, Japan1P-25	Chemical Modeling of Etch Process Using C3F6O Alternative Gas	Y. Kondo1, Y. Miyawaki1, K. Takeda1, K. Ishikawa1, H. Kondo1, T. Hayashi1, H. Okamoto2,
M. Sekine1, and M. Hori1
Nagoya University, Japan, 2Asahi Glass Co., Ltd., Japan1P-26	Effects of Substrate Temperature on Properties of µC-Si:H Films Deposited Using
Multi-hollow Discharge Plasma CVD	Y. Kim, T. Matsunaga, Y. Kawashima, K. Nakahara, G. Uchida, K. Kamataki, N. Itagaki, K. Koga,and M. Shiratani
Kyushu University, Japan
P-27	Growth Enhancement of Plants Using Atmospheric Pressure Dielectric Barrier
Discharge Irradiation
S. Kitazaki1, G. Uchida1, K. Koga1, M. Shiratani1, and N. Hayashi2
Kyushu University, Japan, 2Saga University, Japan1

P-28	Combinatorial Deposition of Surface Nitridated Si Nano-particle Composite Films byDouble Multi-hollow Discharges	M. Sato, K. Yamamoto, Y. Kawashima, K. Nakahara, T. Matsunaga, D. Yamashita, H. Matsuzaki,
G. Uchida, K. Kamataki, N. Itagaki, K. Koga, and M. Shiratani
Kyushu University, Japan
P-29	In-flight Melting Behavior of Granular Alkali-free Glass by Multi-phase AC Arc andHybrid Plasma
Y. Liu1, M. Tanaka 1, Y. Tsuruoka1, T. Watanabe1, C. Tanaka2, and O. Sakamoto2
Tokyo Institute of Technology, Japan, 2Asahi Glass Co., Ltd., Japan1P-30	Process Window of Microcrystalline Silicon Films Deposited Using Multi-hollow
Discharge Plasma CVD	T. Matsunaga, Y. Kim, Y. Kawashima, K. Koga, D. Yamashita, K. Nakahara, M. Sato, G. Uchida,
K. Kamataki, N. Itagaki, and M. Shiratani
Kyushu University, JapanP-31	Plasma Process for Micro-Nano Hierarchically Structured Films with Hexagonal
Close-Packed and Non-Close-Packed Arrangement Using Laser Ablation or Sputtering
N. Koshizaki, S. Gao, and Y. Li
National Institute of Advanced Industrial Science and Technology (AIST), Japan

P-32	High-speed DLC Coating Employing High-density Near Plasma Sustained byMicrowave Propagation along Plasma-sheath Interface
T. Okamoto, H. Kousaka, and N. Umehara
Nagoya University, Japan
P-33	Reactive Species Measurement of an Atmosphere-pressure Plasma by a DifferentiallyPumped Mass-Spectrometer
Y. Sawaguchi, T. Ishijima, and H. Toyoda
Nagoya University, Japan
P-34

Improvement of Silicon Thin Film Quality for Photovoltaic Cells by Modified
Microwave Antenna Structure
Y. Ito, J. Sakai, T. Ishijima, and H. Toyoda
Nagoya University, Japan

P-35	Glass Panel Surface Treatment by Atmospheric Microplasma
K. Shimizu, A. Umeda, and M. Blajan
Shizuoka University
P-36	Electrical Charging Characteristics of Pt-Nanodots Floating Gate in MOS Capacitors	K. Makihara1, N. Morisawa2, M. Ikeda2, K. Matsumoto2, M. Yamane2, S. Higashi2, and S. Miyazaki1
Nagoya University, Japan, 2Hiroshima University, Japan1

P-37	Investigation of Surface Reactions in ArF Photoresist by Using Parallel Plate
Structure in Conjunction with Numerical Analysis	A. Malinowski1,2, M. Sekine1, M. Hori1, K. Ishikawa1, H. Kondo1, T. Suzuki1, T. Takeuchi1,H. Yamamoto1, A. Jakubowski2, and L. Lukasiak2
Nagoya University, Japan, 2Warsaw University of Technology, Poland1

P-38	Nucleation Control of Carbon Nanowalls Grown Using Inductively Coupled Plasmaenhanced CVD
Y. Nihashi1, M. Hiramatsu1, H. Kondo2, and M. Hori2
Meijo University, Japan, 2Nagoya University, Japan1

P-39

Improvement of Deposition Uniformity of Aligned Carbon Nanotube Films Using
Microwave Plasma-enhanced CVD
M. Naito1, K. Murata1, M. Hiramatsu1, and M. Hori2
Meijo University, Japan, 2Nagoya University, Japan

1

P-40	Electrical and Chemical Structures of Nanographene Nucleated at Initial Growth
Processes of Carbon Nanowalls
K. Yasuda1, H. Kondo1, M. Hiramatsu2, M. Sekine1, and M. Hori1,Nagoya University, Japan, 2Meijo University, Japan1

P-41	Control of Bridging Growth and Electrical properties of Single Carbon Nanowalls	T. Kanda1, H. Kondo1, K. Yamakawa2, M. Hiramatsu3, K. Takeda1, K. Ishikawa1, M. Sekine1, andM. Hori1
Nagoya University, Japan, 2Katagiri Engineering Co., Ltd., Japan, 3Meijo University, Japan

1P-42	Dissociations of Alternate Etching Gases in Reactive Plasma
T. Hayashi1, K. Ishikawa1, M. Sekine1, M. Hori1, A. Kono1, and K. Suu2
Nagoya University, Japan 2ULVAC Inc., Japan1P-43	Control of Surface and Interfacial Structures by Radical Nitridation Technique for Ge
MOS Transistors
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Nagoya University, Japan
P-44	Gas Phase Reaction of Activated Species in O2 /Ar Nonequilibrium AtmosphericPressure Plasma
M. Kato, K. Takeda, K. Ishikawa, H. Kondo, M. Sekine, and M. Hori
Nagoya University, Japan
P-45	ECR Hyperthermal Neutral Beam Source for Low Temperature GaN Epitaxial Growth
S.B. Kim1,2, D. Ku1 , H. Chang1,2, M. Cho 2, S.J. Yoo1	1National Fusion Research Institute, Korea,Pohang University of Science and Technology, Korea

2P-46

Improvement on Electrical Stress Endurance of Low-Temperature Deposited SiO2
Films by Atmospheric Pressure Thermal-Plasma-Jet Annealing
Y. Nishida, S. Hayashi, K. Matsumoto, and S. Higashi
Hiroshima University, JapanP-47	Behavior of Atomic Species in the Multi-Micro Hollow Cathode Lamp Measured byLaser Absorption Spectroscopy	M. Inoue1, T. Ohta1, T. Kanae1, N. Takota1, M. Ito2, H. Kano3, K. Yamakawa4, and M. Hori5	1Wakayama University, Japan, 2Meijo University, Japan, 3NU Eco Engineering Co., Ltd., Japan,Katagiri Engineering Co., Ltd., Japan, 5Nagoya University, Japan

4P-48	HXPES Analysis of Ar+O2 Plasma Exposed Zn/PET Interface for Inorganic Layer
Formation on Organic Materials
K. Cho1,4, K. Takenaka1,4, Y. Setsuhara1,4, M. Shiratani2,4, M. Sekine3,4, and M. Hori3,4	1Osaka University, Japan, 2Kyushu University, Japan, 3Nagoya University, Japan,Japan Science and Technology Agency, CREST, Japan

4P-49	Mist-Plasma CVD of ZnO Films with Zn(CH3COO)2 Solution
K. Takenaka, Y. Okumura and Y. Setsuhara
Osaka University, Japan

P-50	Temperature Measurement of Silicon Wafer Treated by Atmospheric Pressure Plasma
Using Frequency Domain Low Coherence Interferometer
T. Tsutsumi1, T. Ohta1, M. Ito2, and M. Hori3
Wakayama University, Japan, 2Meijo University, Japan, 3Nagoya University, Japan1

P-51	Passivation of Plasma Damaged GaN with Hydrogen Radical Anneal	Sh. Chen1, Y. Lu1, R. Kometani1, K. Takeda1, K. Ishikawa1, H. Kondo1, H. Kano2, Y. Tokuda3,M. Sekine1, Y. Setsuhara4, T. Egawa5, H. Amano1, and M. Hori1	1Nagoya University, Japan, 2NU Eco-Engineering Co., Ltd., Japan,Aichi Institute of Technology, Japan, 4Osaka University, Japan,3Nagoya Institute of Technology, Japan

5P-52	Measurement of Atomic Oxygen in Ultrahigh Density 60 Hz Atmospheric Pressure
Plasma by Two Photon Absorption Laser Induced Fluorescence	F. Jia1, K. Takeda1, K. Ishikawa1, H. Inui1, S. Iseki1, H. Kano2, H. Kondo1, M. Sekine1, andM. Hori1
Nagoya University, Japan, 2NU Eco-Engineering Co., Ltd., Japan1P-53	Surface Analysis of GaN Irradiated by Cl2 Plasma Beam	Y. Lu1, S. Chen1, R. Kometani1, K. Ishikawa1, H. Kondo1, K. Takeda1, M. Sekine1, T. Egawa2,H. Amano1, Y. Setsuhara3, and M. Hori1	1Nagoya University, Japan, 2Nagoya Institute of Technology, Japan, 3Osaka University, Japan
P-54	Space- and Time-Resolved Measurement of Electric Field in Atmospheric-pressure
Pulsed Microwave Plasma
T. Murase, A. Kamata, T. Ishijima, and H. Toyoda
Nagoya University, Japan
P-55	Deposition of Ti/C Nano-Multilayered Films by Magnetron DC Sputtering Using Dual
Targets
T. Sonoda, S. Nakao, and M. Ikeyama
National Institute of Advanced Industrial Science and Technology (AIST), JapanP-56	Diagnostics and Surface Reaction Analysis on RF Sputtering Process for Co
Nanoparticles Formation
I-S Bae1, K. Kuno2, M. Ito2, H. Kondo1, M. Sekine1, and M. Hori1
Nagoya University, Japan, 2Meijo University, Japan

1P-57	Experimental Study of Electric Discharge Treatment of Nanodiamond Particles inLiquid and Gas Phases
D. Medvedev, V. Petyev, D. Sapunov, and B. Potapkin
Russian Research Center “Kurchatov Institute”, Russia

P-58	Optimization of Dense Plasma Focus Device for the Preparation of Silicon
Nanostructure
M. Kotb, A.H. Sudy, S. Hassaballa, and M.M. ElokerPhysics Department, Faculty of Science, Al-Azhar University, Nasr city, Cairo, Egypt

Saturday, March 12, 2011
9:00

I-08	[Invited] The Physics and Chemistry of Plasmas In and Onto Liquids		

W.G. Graham and the QUB Low Temperature Plasma Research Team		Queen’s University Belfast, UK

9:40

I-09	[Invited] Generation of Controlled Gas-Liquid Interfacial Plasmas for Synthesisof Novel Nano-Bio Conjugates		

T. Kaneko1,2, T. Harada1, Q. Chen1, and R. Hatakeyama1		

1Tohoku University, Japan, 2CREST/JST, Japan
Break (10:20–10:35)

10:35

O-08	Non Equilibrium Plasma Conversison of Pyrogas into Synthesis Gas		

F. Odeyemi, A. Rabinovich, and A. Fridman		Drexel University, USA

10:55

O-09	Synthesis of Nano-graphene by Plasma in Liquid Ethanol		T. Hagino1, H. Kano2, K. Ishikawa1, K. Takeda1,3, H. Kondo1, M. Sekine1,3, and M. Hori1,3		
11:15

Nagoya University, Japan, 2NU Eco Engineering, Japan, 3JST-CREST, Japan

1I-10	[Invited] Plasma Treatment of Living Tissues — How Penetrating are
the Plasma-mediated Therapeutic Effects		

M.G. Kong and G. Shama		

Loughborough University, UKClosing Remarks (11:55–12:00)