2010.1.25-29, PAM3 Winter school @Alenabolaget Konsert & Kongress

Footprint on cubic SiC on Si substrate
Widegap Materials Inc.
Kyoto , Japan
Shigehiro Nishino1) On the way to buffer layer formation:1970-1980
2) Work at NASA Lewis Research Center:1981.6-1982.8
3) Reproducible 3C-SiC growth on 2-inch Si wafer4) Start at Kyoto Institute of Technology(KIT):1986-Start from no facilities
5) We got rf generator: Si2H6-C2H2-H2-CVD system
6) HMDS, TMS, HCDS : non-SiH4, non-Si2H67) Growth on patterned Si substrate
Pendio epitaxial growth, Lateral growth,8) Growth on various planes of Si, (111),(211),(110),(100)
Summary1

1970

Epitaxial growth of 3C-SiC on Si substrate using
SiCl4+C3H8-H2 by Chemical Vapor Depositionwater

U shape manometers were used andgas was fed in Pyrex glass tube. Vales
were also made in Pyrex glass.
capillaryH2 flow

Siliconoil

Resistive hearting furnace

U shape manometer

D.M.Jackson,Jr. and R.W.Howard, “ Fabrication of Epitaxial SiC films on Silicon”
Transactions of The Metallurgical Society of AIME, 233(1965)488.

2

We got rf generator : 10 kW, 300 kHz

Epitaxial growth of 3C-SiC on Si substrate using
SiCl4+C3H8-H2 by Chemical Vapor Deposition

1971

Flow meters were attached and gas
was fed in Teflon tube. Vales werealso made in Teflon.
3

Vertical furnace heated by rf induction.

1971

4

Mirror like surface was obtained, but,,,,,.

XRD showed 3C-SiC but,,,,,IR reflectivity

5

Optical Properties of β-SiC Crystals Prepared by
Chemical Vapor Deposition,
S.Nishino, H.Matsunami and T.Tanaka

Jpn. J.Appl.Phys. vol.14, No.11, (1975) pp.1833-1834.

6

Thin Solid Films, vol.40, (1977) pp.L27-L29

Single crystalline β-SiC was depositedon Si substrate by rf sputtering.
S.Nishino, M.Odaka, H.Matsunami and T.Tanaka

RHEED pattered showed single crystal of 3C-SiC

7

Epitaxial growth of 3C-SiC on Si substrate using
SiCl4+C3H8-H2 by Chemical Vapor Deposition
Flow meters were Applied Physics made, andTeflon tube was replaced by stainless tube.
Reproducible epitaxial growth was not confirmed
at this stage. Sometime we got such a single
crystal but sometime polycrystal appeared.

Lateral reaction tube

8

Journal of Crystal Growth 45 (1978) 138.

9

I learned a lot about role of buffer layer fromanother materials
ZnO on sapphire
JJAP 17(1978)773
Chemical Vapor Deposition of single-Crystalline ZnO film with Smooth surface on
Intermediately Sputtered ZnO Thin Films on Sapphire
S.Ohnizhi,Y.Hirokawa, T.Shiosaki and A.Kawabata

GaP on Si
Journal of Electronic Materials, 9(1980)783
Heteroepitaxial Growth of Gallium Phosphide on Si
T.Katoda and M.Kishi

BP on Si
JJAP 14(1975)754.
Effect of Growth Parameters on the epitaxial Growth of BP on Si substrate
T.Nishinaga and T.Mizutani

Intellectual curiosity should be expanded to periphery of
your research subject.
10

SiH4-C3H8-H2 CVD system from 1978

Chemical Vapor of Single Crystalline β-SiC Films on Silicon
Substrate with Sputtered SiC lntermediate Layer
J.Electrochemical.Soc. Vol.127,(1980)2674.

Thickness of the sputtered layer: room temp, 800 oC, 1000 oC.

RHEED pattern of sputtered layer: room temp, 800 oC, 1000 oC.

11

RHEED pattern of sputtered layer: after annealing at 1270 oC for 30 min in CVD reaction tube.

I did not know this morphology related to APD at this moment.

Surface morphology of the grown layers (a) Si(100), (b) Si (111).

RHEED patterns of the grown layers (a) Si(100), (b) Si (111).

12

1) Two step process: [buffer layer formation by sputtering] + [CVD].

2) Two step process: [buffer layer formation by carbonization of Si
surface in vacuum chamber] + [CVD].

Buffer layer was formed by carbonizing Si surface in C3H8+Ar ambient in vacuum
system. Substrate temperature , carbonization time, flow rate of C3H8 were
optimized.

3) One step process: [buffer layer formation in CVD] + [CVD].

13

I made free standing thick SiC film (2mmX4mm, 30 μm thick).

Once buffer layer was formed, we got single crystal of 3C-SiC in every run.
We had a confidence to reproduce single crystal growth of 3C-SiC on Si
using intermediate layer called buffer layer, carbonized layer.
14Archimedes is said :Give me a place to stand on, and I will move the Earth.
So I proposed my postdoc work at NASA Lewis Research Center.

Give me a nice CVD facility ,I can make you thick (100 μm) 3C-SiC films on Si wafer. 15

Dr.Tony Powell responded soon,“ Come and make us nice 3C-SiC “
So I visited his lab on June, 1981.

NASA Lewis Research Center, near
John Hopkins International airport, Cleveland , Ohio, U.S.A.
16

Appl.Phys.Lett.42(1983)460.

ECP pattern shows
this film is single crystal 3C-SiC

25mmx50mm, 30um thick17

Hall measurement sample

18

Tony Powell and Hurb Will.

3C-SiC coverage depends on C/Si ratio.19

20

Local news paper in Cleveland,OH : The Plain Dealer

21

J.Appl.Phys 61(1987 )4889

I had to compete with my result at NASA22

Buffer layer formation parameters were precisely determined.

23

We realized single crystal growth of 3C-SiC on Si by
employing buffer layer formation.
Now MFC equipped system wasequipped in our CVD system.

24

I learned a lot about APD in GaAs(100) on Si(100).
Anti-Phase Domain is essentially formed on (100) planezinc blend structure on diamond structure materials.
JJAP 25(1986)L789.
Effects of the substrate Offset Angle on the Growth of GaAs on Si substrate
T.Ueda, S.Nishi,Y.Kawarada,M,Akiyama and K.Kaminishi
JJAP 23(1984)L843
Growth of single Domain GaAs on Layer on (100)-oriented Si substrate
M.Akiyama, Y.Kawarada and K.Kaminishi

Surface morphology of GaAs on Si(100) substrate25

Appl. Phys Lett 50(1987 )1888.

26

SEM microphotographs of the surface morphology of grownlayers on (100) (a) and 4o off (b). The surface on (100) was
flatter than that on 4o off (c) Normarski microphotographs of thesurface morphology of the same sample as (a).

27IEEE Electron Device Letters, EDL-7, No.12, December 1986, p.538.

28

1986 , I moved to Kyoto Institute of Technology
I started from zero base. No rf generator !!
How to get high temperature for CVD growth ?
Hand-made resistive heating furnace.

Load lock valve: we can insert
substrate at hot zone quickly.
To make a nice buffer layer,
29
quick temperature ramp up is a key parameter.

1987 December 10, 11: ICACSC
1st international conference on amorphous andcrystalline silicon carbide and related materials@ Howard University , Washington DC

30

1987

Amorphous and Crystalline Silicon Carbide 1989,p.186

Si2H6-C2H2-H2 system

31
1000℃

1100℃

1150℃

Low temperature growth of 3C-SiC prepared by plasma assisted CVD
Si2H6 + C3H8 + H2 system. Plasma was formed by Micro wave excitation
which was modified from microwave oven32

Low temperature growth of 3C-SiC prepared by plasma assisted CVD

33

Low temperature growth of 3C-SiC prepared by ECR plasma assisted CVD
Microwave was made by modifying microwave oven andmagnet was used from Ti sublimation pump.

34

Epitaxial growth of 3C-SiC on Si substrate using
Si2H6+C2H2-H2 by Chemical Vapor Deposition

We got rf generator

35

35

Now we can make nice buffer layer by heating Si substrate quickly

36

Amorphous and Crystalline Silicon Carbide Ⅳ 1992,p.411

Widegap emitter (3C-SiC) was deposited on Si pn junction: Transistor .
But h value was low,,less than 137Island nucleation is formed when the Si surface is not well carbonized. So
it is a key issue to establish carbonization condition for 3C-SiC on Si
substrate.

38

1991 October, Santa Clara University
Students were so stimulated to meet active researchers
from all over the world.

39

1991, November 15
Professor Janzen visited our laboratory.

40

Dr.O.Kordina started SiC growth.
GaAs CVD furnace was modified to SiC CVD
furnace. First issue was how to get higher
temperature using 3 kW rf generator.
Because epi-temerature is quite different
from GaAs growth and SiC growth.
How many of you remember this building ?

1992 ?

41

I stayed two months in ifm Liu in1996. Aug.Sept. I enjoyedsublimation close space technique. I learned this methodfrom Dr.Anikin in Ioffe Institute when I visited there.

42

43

I enjoyed chat with nice guys and exchange idea during
coffee time.

44

Epitaxial growth of 3C-SiC on Si substrate using
HMDS-H2 by Chemical Vapor Deposition
We quitted to use Si2H6. Bye , bye Si2H6
We started to use HCDS, HMDS from safety point of view.
One source material: HMDS: Si2(CH3)6, TMS:Si(CH3)4,
Two source material: HCDS: Si2Cl6, C3H8

45

46

J.Electrochem.Soc.,139(1992)3565.

47

J.Electrochem.soc.142(1995)565.

48

ICACSC91 1991 December 10,11@ Santa Clara University

December 10-11,1987
Howard University

December 14-16,1988
Santa Clara University

28 papers

45 papers

April 11-13,1990
Howard University

October 9-11,1991
Santa Clara University

54 papers

63 papers

49

Can we find similar effect in case of 3C-SiC on Si ?

50

We started ELOG, Pendio growth ,,,but,,,

51

Heteroepitaxial Growth of
Air-bridged 3C-SiC
Y. Okui1, Chacko Jacob2, S. Ohshima1, S. Nishino1
seed region
Lateral Epitaxial Overgrowth (LEO) region

3 µm
3C-SiC

air-gap
Si

Advantages of air-bridged 3C-SiC on Si substrate→ Separation between Si and 3C-SiC→ Relaxation of lattice mismatch, thermal expansion difference→ Decrease of the dislocations in the epilayer
52

Growth condition of seed region and LEO region

Temp. [˚C]

Seed region(a)regrowth1370 ˚C

1350 ˚C(d)1250 ˚C
1200 ˚C(b)1200 ˚C(c)

C3H8 HMDS
HCl
11

①

H2

HCl

①

C3H8

HCl

H2

11

2 3~15
SiO2

Si

H2：3 ~ 7 slm

seed 3C-SiC

HMDS
HCl

2

②

Si

HMDS: hexamethyldisilane (Si2(CH3)6)60②
Time [min.]
3C-SiC
air-gap
seed 3C-SiC
53

KIT, Kyoto, JapanFabrication procedure of Air-bridged 3C-SiC
SiO2

seed 3C-SiC(a) Formation of seed region(a)Si (111)：CVD of thin 3C-SiC layer at windows(b) Removal of SiO2(b)

Si (111)：HF(c) Formation of conduit(c)
3C-SiC(d)

Si (111)：in-situ etching of Si

air-gap

Si (111)(d) Regrowth：CVD of 3C-SiC
54

KIT, Kyoto, JapanTemperature dependence of the seed 3C-SiC
LEO region

LEO region
seed region

seed region

3C-SiCSi

3C-SiC
10 µm

PE film on the seed 3C-SiC
grown at 1250 ˚C

Si

10 µm

PE film on the seed 3C-SiC
grown at 1350 ˚C

1350℃ Growth temperature of seed region→ the smooth surface of the air-bridged 3C-SiC
55

KIT, Kyoto, Japan

Flow rate dependence of the H2 carrier gas
The flow rate of H2 carrier gas at regrowth

3 slm
coalescence LEO region

LEO region

3C-SiC
seed region
air-gap

→

7 slm
5 µm

5 µm

3 slm (3.4 µm/hr.)

3C-SiC

3C-SiCSi

5 µm

LEO region

SiSi
seed region

4 slm (2.0 µm/hr.)seed region

7 slm (0.8 µm/hr.)Increase of the H2 carrier flow rate at regrowth・Improvement of the surface morphology of epilayer
・Decrease of the growth rate along <111> direction
56

KIT, Kyoto, Japan

Conclusion
The effective parameters for air-bridged 3C-SiC were the growth temperature of theseed 3C-SiC and the flow rate of H2 carrier gas during regrowth.

The underlying seed 3C-SiC:
The high growth temperature (1350 ˚C~)
The regrown 3C-SiC:
The increase of the H2 carrier
flow rate• The smooth surfaceof the epilayer• The smoother surface• The decrease of growth rate
along the <111> direction

The crystallinity of LEO region is superior to that of seedregion, and that of the boundary region is bad.
57

KIT, Kyoto, Japan

Epitaxial growth of 3C-SiC on Si substrate using Si2Cl6-C3H8-H2 system

58

Temperature profile of the growth
Etching
Temperature[℃]

Carbonization

Growth

1100~1340

1175

2

2

10
Time[min]Gas supply[sccm]
H2

1000~10000

3000

C3H8

0.4~1.6

1.2

0.2~0.8
HCDS

1000
Ar

59

Proposed Model for reduction of stacking fault in 3C-SiC on Si(100)Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara,
J.Crystal Growth 237-239(2002)1244-1249.

<001>
<111>

<-1-11><110>
growth<-110>

growth3C-SiC
Si
60

How to make grooves on Si substrate（１）
<001>

SiO2

SiO2：thickness:600nm

<110>

Si
<1-10>

・SiO2:line and space patterning
Five different widths:
2μm、5μm、10μm、20μm、50μm(111)・Si etching in KOH 30% hot water:
70℃,for 30 −６０ min.
61

How to make grooves on Si substrate（2）Si
・SiO2 is removed by dipping Si into HF

3C-SiCSi 

 

 

 



・3C-SiC deposition by CVD
62

Growth rate dependence on C/Si ration

63

Temperature dependence of growth rate
1300℃、C/Si = 3/1

Growthrate<100>

1300℃、C/Si = 1/1

1340℃、C/Si = 1/1

10μm

10μm

10μm

5μm

5μm

5μm

2.4μm/h

1.3μm/h

0.5μm/h64

XRD characterization of 3C-SiC on Si(100) substrate

Flat substrate
平坦なSi上のSiC

FWHM：0.16°

V-shaped Si substrate
V字型溝付きSi上のSiC

FWHM：0.27°-0.6<-110>

-0.4

-0.2

0

0.2

0.4

0.6

θ[deg.]<110>

FWHM of 3C-SiC on V-grooved Si(100) is
smaller than that on flat substrate.
50μm

65

Pendio Epitaxial Growth of 3C-SiC
on Si(100) Substrates by CVD method
A. Shoji, Y. Okui,
Okui, T. Nishiguchi,
Nishiguchi, S. Ohshima and S. Nishino: Proc. of the 10th Int.
Int. Conf. On Silicon Carbide and Related Materials, Lyon, France, 2003
Growthof seed 3C-SiC
3C-SiC
Si(001)
Si(001)

Patterning by RIE

Regrowth of 3C-SiC
pendeo epitaxial (PE) layer

seed 3C-SiC
Si(001)

Si(001)

Patterning by HCｌseed 3C-SiC(001)Si

seed 3C-SiC(001)SiT shape is needed to prevent growth from side wall of Si roots.
66

temp.
Growthof seed 3C-SiC

HCl:49sccm+H2:1.5slm
C3H8:1sccm+H2:1.5slm
HMDS:0.3sccm+H2:3slm

1300°C
1300°C

1175°
1175°C

HMDS

3C-SiCCH3 CH3
Si(001)

13
HCｌ

3
C3H8

60

min.

HMDS

CH3

Si

Si

CH3

CH3 CH3

Patterning by RIE
seed 3C-SiC
Etching gas :SF6
Si(001)
temp.
Patterning by HCl&
Regrowth of 3C-SiC

1300°C
1300°C

1175°C
1175°C
HCl:5sccm+H2:1.5slm
HMDS:0.3sccm+ H2:3slm

pendeo epitaxial layer

Si(001)

10

3

HCｌ

C3H8

min.
HMDS

67

Smooth surface dependence on width of flat top.

dseed 3C-SiC

1.8µm
3.6µm

Patterning by HCl

sample A : d=11µm
d=11µmsample B : d=5.7µm
d=5.7µm

Si(001)[-111]

sample B

sample A[001][-110]

約5.7µm

約11µm

Si(001)

seed 3C-SiC

10µm

5µm

Si(001)
seed 3C-SiC

Regrowth Temperature=1300°C
HMDS=0.3sccm，H2=3slm
Time=10h68Growth process
Gas flow

sample A
seed 3C-SiC
Si(001)

seed 3C-SiC

Si(001)

seed 3C-SiC

Si(001)

seed 3C-SiC

Si(001)

seed 3C-SiC

5µm

Si(001)
69

TEM observation[001][-110][001][-110](Scraped area by Ar+ ion milling)
Si(001)5µm
Regrowth
Temperature=1370℃
HMDS=0.3sccm
H2=2.5slm
Time 3h

defective area

PE areaseed 3C-SiC
500nm
Si(001)JEOL JEM-2010SP model TEM operated at 200 kV

70

Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by
CVD method
Seiji Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi,
Crystal Defects

3C-SiC

SiO2 layer

Si Substrate

3C-SiC grows laterally

(a)

(b)

LEO region(c)(a) : Substrate before growth(b) : Lateral overgrowth on
SiO2 layer(c) : No defect crystal on
SiO2 layer

SiO2

SiC

71

Growth Condition (1)H2 6000sccm

Temp (°C )1.0sccm
C3H8
HCDS

1.2sccm
0.6sccm

1250
~1300

Key parameters• Growth temperature• Flow rate
• C/Si ratio• Position on susceptor
Effect crystal quality
and growth rate

Carbonization(3min)

CVD

Time
72

Cross-sectional TEM image
LEO regions

LEO regions

Crystal defects spreadfrom edge of SiO2
LEO regions crystal quality
is not good
Too fast growth rate is not good for making single crystal

73

Advanced LEO
SiO2 layer215°

Si <111> face

Si <100>
HCl Etching
3C-SiCCVD Growth(low growth rate)

added the HCl etching process
crystal defect hard to spread
low growth rate conditionhigh crystal quality come into LEO region
7474

Conclusion
Generation of nucleation on SiO2 layer
reduced by using narrow width SiO2 pattern
Improvement of Crystal quality at LEO region
the sample grown under the advanced LEO
shows good crystal quality
For the future…
more observation at LEO region
more optimization the growth condition
measurement electric characteristics

75Temp. [oC]

Etching

Carbonization

CVD Growth

1300
1175

10

H2
Gas supply[sccm]

3000

time [min.]

6000

HCDS
C3H8
C3H8
flow rate

C/Si
ratio

Ar

1000

Significant
76

TEM
observation of buffer RHEED
layer
炭化バッファ層のH2 = 6.0 slm, C3H8 = 1.2 sccm
1300 °C, 2 min.

H2 = 6.0 slm, 1300 °C, 2 min.
(110) substrate
C3H8 = (e) 0.6, (f) 0.4 sccm

77

炭化バッファ層のTEM像
Bufferlayer analysis by TEM
H2 = 6.0 slm, C3H8 = 1.2 sccm
1300 °C, 20 min.
(100)

stacking faults:(111) family
epi/sub interface: (111) or (100)
(111)

(211)

observed along the [011] axis

(111)

(111)

(111)

(111)

(111)

(111)
[100]

SiC

[111]

Si

(100) terrace

SiC
Si(111) terrace

[211]

SiC
Si

(111) and (100)nano facets (~10 nm)
78

Nano-undulation of SiC on Si(211)

Nano level undulation is automatically formed by using Si(211).
79

Step
flow growth of SiC
on Si(211)(211)基板上のステップフロー成長[111]

Step flow growth[100]

Step flow growth is enhanced by using Si(211).
80

各面方位の3C-SiCとSi基板の整合性
Latticematching of SiC on various planes of Si
ヘテロ界面 において ，同一平面内の原子同士 の位置 が互いに整合する最小の面積[100] Si[100] SiC

面積が狭い➡単位面積当たり で 整合する
原子 の密度 が高い➡ ヘテロ界面の整合性が高い[110] Si[111] SiC
(0.543 x 4) X (0.543 x 4) = 4.72 nm2[111] Si

(0.543) X (0.384 x 4) = 0.83 nm2[111] SiC

(0.222 x 3 x 4) X (0.384 x 4) = 4.09 nm2
81

Surface morphology of SiC
半球面研磨した(111)
基板上への成長
on spherically polished Si(111)substrate
off-axis toward the [112] Si axis
is effective for (111) Si substrate

plan view
[111]

[011]

[211]

[111]
(111) polecross sectional viewSi (111) hemi-sphere
HCDS = 0.6, C3H8 = 0.4 sccm
(C/Si = 1.0) 1300ºC, 60 min.
82

Surfacemorphology of SiC on Si(100), (111) and (211)(100),(111),(211)基板上への成長
C/Si ratio(100) = 3.0, (111) = 1.0, (211) = 1.0(211) corresponds to (111)19.5° off-axis toward [112]

(100)

(111)

Film thickness ~ 3 µm

(211)

83

TEM
observation of SiC(211) on Si (211)(211)基板上の成長
H2 = 6.0 slm, C3H8 = 1.2 sccm
1300 °C, 2 min.

Si (211)HCDS = 0.6, C3H8 = 0.4 sccm
(C/Si = 1.0) 1300ºC

TEM imageobserved along the [011] axis

84

Reductionof stacking faults depending on Si(100) and Si(211)
積層欠陥低減の面方位依存性(100)viewed from [011]

(211)

(111)
or
(111)

[100]

(111)
[211]

thicker film is necessary
similar discussion on (111) Si substrate

stacking faults arecanceled effectively
85

Surfacemorphology of 3C-SiC on spherically polished Si(211)
半球面研磨した(211)基板上への成長

plan view[211]

defect density

[111]

High:

[011]

(211) pole &(211) off toward [111][211](211) polecross sectional view

Si (211) hemi-sphere
HCDS = 0.6, C3H8 = 0.4 sccm
(C/Si = 1.0) 1300ºC, 60 min.

Low:(211) off toward [011]Growth on the (211) on-axis substrate(111) stacking faults ---> (111) or (111)Growth on the (211) off-axis toward [011](111) stacking faults ---> (111)---> effective stacking fault reduction86Surface morphology of SiC on spherically polished Si(110)87Twin defect were reduced by using Si(110) with
オフ角の導入による双晶欠陥の低減
off-angle toward [001]
TEM imageobserved along
the [110] axis(110) 3º off-axis
toward the [001] Si axis[001]方向へのオフ角を導入することにより，Initially formed twins were annihilated when thickness
成長初期に発生した双晶が，厚さ数100 nm
became 100nm by using off-angles Si(110) substrate.
成長した段階で3C-SiC単結晶に統一された．

Step flow⬆(110)オフ基板上のステップフロー成長
growth of 3C-SiC on Si(110) with off-angle toward [001]88Conclusion
(1)
まとめ−１
Hetero-epitaxial growth of 3C-SiC on Si substrates
Growth mode:(100), (111), and (211)(100): broad terrace(111): broad terrace(211): nano-undulation

3D growth
3D growth
step-flow growth

The reduction of stacking faults on (211) substrate
Nano-facet structure on (211) substrate➡ Self-arranged "nano-undulation" structure➡ Effective reduction of stacking faults
89

Conclusion
(2)
まとめ−２
Growth on hemi-spherically polished substrate(111) . . . off-axis toward the [211] Si axis(110) . . . off-axis toward the [001] Si axis

specular surface

CVD growth on (110) Si substrates- a reduced flow rate of C3H8 during the carbonization process- (111) 3C-SiC // (110) Si, [110] 3C-SiC // [110] Si- on the on-axis (110) Si substrate ➡ twinned (111) 3C-SiC- on the off-axis (110) Si substrate toward the [001] Si axis
➡ step-flow growth without twinning
90

Flow rate dependence on film uniformity

H2=1 slm,
v=4 cm/sec

H2=3 slm,
v=11 cm/sec

H2=5 slm,
v=18 cm/sec

H2=7 slm,
v=26 cm/sec

When flow rate increases, average velocity in thechannel increases. Consequently, thickness of boundary
layer (δ) decreases and deposition area extends to almost
end of the substrate.

H2=10slm,
v=37 cm/sec

91

Summary

Where there is a will, there is a way.

92

Thank you for your attention

Welcome to Widegap Materials Inc.

s-nishino@widegap-materials.com

93

Acknowledgements
I really appreciate all my students who contributed to SiC
subjects and also aggressive researchers in all over the world.
I love this SiC family.
Nice guys at ICSCRM North Carolina state Universiy(1997)

94

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97

1994 ?

98♬ My way ♬ ♬ ♬1995, Kyoto♬ And now, the end is near ♬ ♬And so I face the final curtain
My friend, I'll make say it clear
I'll state my case,of which I'm certain
I've lived a life that's fullItraveled eachand every highway
And more, much more than this,I did it my way

For what is a man, what has he got?
If not himself, then he has naught
To say the things he truly feels
and not the words of one who kneels
The record shows I took the blows
and did it my way!
Yes, it was my way ♬ ♬ ♬ ♬ ♬ ♬99