2010 International Symposium on Dry Process

ProgramThursday, November 11, 2010 Opening Remarks (9:30–9:35, Digital Hall)

N. Itabashi

Award Ceremony (9:35–9:50, Digital Hall)

Presenter: T. Ohiwa

Session A Solar Cell, Green Technology (9:50–12:45, Digital Hall)
Chairpersons: Y. Shimogaki, K. Nishioka[A-1]<Invited> Research for Photovoltaics: Cost Reduction of Solar Energy through
9:50–10:30
Comprehensive Researches from Materials to Large Scale PV Systems
		
M. Kondo1,2, H. Sai1, T. Matsui1 (1AIST, 2Tokyo Inst. of Technology) .......... 1[A-2]<Invited> Atmospheric-Pressure Plasma Technology for the High-Rate and10:30–11:10
Low-Temperature Deposition of Si Thin Films
H. Kakiuchi, H. Ohmi, K. Yasutake (Osaka Univ.) .......... 3
Break (11:10–11:25)
Chairpersons: S. Nunomura, M. Sekine[A-3]<Invited> Plasma Etching Technology to Enhance Solar Cell Efficiency
11:25–12:05

D.-Y. Lee1, C. Yang1, H.-M. Li1, W.J. Yoo1, Y.J. Park2, J.M. Kim2
		(1Sungkyunkwan Univ., 2Samsung Electronics Co., Ltd.) .......... 5[A-4]

A Novel Method to Improve Uniformity in a Large Area VHF Plasma Source
12:05–12:25
for Solar Application
T. Tanaka, J. Kudela, E. Hammond, C. Boitnott, Z. Chen,		
J.A. Kenney, S. Rauf (Applied Materials Inc.) .......... 7[A-5]

Magnetron Sputtering Deposition of Conductive Diamond-Like Carbon Films
12:25–12:45
with Embedded Nanoparticles
K. Sasaki1, T. Tsutsumi2, N. Takada2, N. Nafarizal3		(1Hokkaido Univ., 2Nagoya Univ., 3Univ. Tun Hussein Onn Malaysia) .......... 9
Lunch (12:45–13:45)

Poster Session 1 (13:45–15:05, Media Hall)
Chairpersons: T. Okumura, N. Itabashi[Poster 1-A] Solar Cell, Green Technology[P1-A1] Decomposition of CO2 by Large Flow Atmospheric Microwave Plasma (LAMP)
		A. Pandey, S. Parajulee, M. Hayakawa, S. Ikezawa (Chubu Univ.) ........ 11[P1-A2] Micromachining of a PZT Cantilever Based on MEMS Scale for Low Frequency
Energy HarvestingM. Kim1, B. Hwang1, N.K. Min1, J. Jeong1, H.W. Lee2, K.-H. Kwon1
		(1Korea Univ., 2Hanseo Univ.) ........ 13[P1-A3] Corrosion Protection of Ti/TiN, Cr/TiN, Ti/CrN, and Cr/CrN Multi-coatingsin Simulated Proton Exchange Membrane Fuel Cell Environments
		
N.D. Nam, J.G. Kim (Sungkyunkwan Univ.) ........ 15[P1-A4] Catalytic Plasma for Methanol from Methane and Oxygen with [Ga Cr]/Cu-Zn-Al
Catalyst in a Dielectric Barrier Discharge
A. Indarto1,2
1
2
		( Korea Inst. of Science and Technology, Institut Teknologi Bandung) ........ 17– xi –

[P1-A5] Application of Plasma Technology in the Synthesis of the Key Materials for
Direct Alcohol Fuel Cells
Z. Jiang1,2, J. Ying1, Z.-J. Jiang3, Y. Meng2
12
		( Ningbo Univ. of Technology, Chinese Academy of Sciences, 3Univ. of California) ........ 19[P1-A6] Surface Treatment of SC-SOFC Electrodes by an Atmospheric- Pressure He Plasma Jet
		S. Kanazawa, T. Iwao, S. Akamine, R. Ichiki (Oita Univ.) ........ 21[P1-A7] Microwave H2/SiH4 PCVD by Modified Microwave Antenna for Improvementof Silicon Film Quality
J. Sakai, Y. Ito, T. Ishijima, H. Toyoda (Nagoya Univ.) ........ 23[P1-A8] Low Temperature Growth of Thin-Film Si:H by PECVD for Solar Cells
		
D.H. Won, S.B. Shim, K.H. Seok, D.H. Kang, J. Jang (Kyung Hee Univ.) ........ 25[P1-A9] SiNx Double Layer Anti Reflection Coating by PECVD for Single Crystalline
Silicon Solar Cells
D. Gong1, J. Ko1, Y.-J. Lee1, G. Choi1, B. Ha2, J. Yi11		( Sungkyunkwan Univ., 2Innovation Silicon Co., Ltd.) ........ 27[P1-A10] Screen-printed EFG(Edge-defined Film-fed Growth) Ribbon Silicon Solar Cells
by Vapor TexturingK. Han2,3, J. Yoo2, H.-E. Song2, K. Yoo2, J. Kwon4, S. Choi3, H. Lee3, J. Yi1
(1Sungkyunkwan Univ., 2Korea Inst. of Energy Research,3
		Chungnam National Univ., 4Chunbuk National Univ.) ........ 29[P1-A11] Factor Determining the Preferential Crystal Orientation in the Growth ofMicrocrystalline Si Films by RF PE-CVD
Z. Tang, D. Ohba, H. Shirai (Saitama Univ.) ........ 31[P1-A12] Effect of Side-Wall Gate Potential on Leakage Current of Amorphous Silicon p-i-n Diode
K.H. Seok1, D.H. Kang1, J. Chang2, T. Tredwell2, J. Jang1 (1Kyung Hee Univ.,2		Device Engineering Scientist Research and Innovations Carestream Health) ........ 33[P1-A13] Real Time Monitoring of the Atmospheric-Pressure Plasma-PEDOT:PSS Interface using Spectroscopic Ellipsometry
T. Ino, T. Hayashi, Y. Muramatsu, R. Ishikawa, K. Suganuma, K. Ueno, H. Shirai		(Saitama Univ.) ........ 35[P1-A14] Improvement of Minority-Carrier Lifetime in GaAsN Grown by Chemical Beam Epitaxy
T. Honda1, M. Inagaki1, H. Suzuki2, N. Kojima1, Y. Ohshita1, M. Yamaguchi1		(1Toyota Technological Inst., 2Univ. of Miyazaki) ........ 37[P1-A15] Structural Analysis of GaAsN Thin Films Grown by Chemical Beam Epitaxy
using X-Ray Reciprocal Space Map 
H. Suzuki1, N. Kojima2, Y. Ohshita2, M. Yamaguchi2
		(1Univ. of Miyazaki, 2Toyota Technological Inst.) ........ 39[P1-A16] Enhancement of Light Trapping using High-k Dielectric in LSPR for
Silicon-Based Thin Film Solar Cells
		
H.-M. Li, G. Zhang, C. Yang, D.-Y. Lee, W.J. Yoo (Sungkyunkwan Univ.) ........ 41[P1-A17] Substrate Temperature Dependence of Sticking Probability of SiOx-CH3 Nano-Particles

H. Miyata, K. Nishiyama, S. Iwashita, H. Matsuzaki, D. Yamashita, K. Kamataki,		
G. Uchida, N. Itagaki, K. Koga, M. Shiratani (Kyushu Univ.) ........ 43[P1-A18] High Photocatalytic Efficiency of ZnO Nanoparticles Synthesized by Spray-Pyrolysis Method
		
S.D. Lee, S.-H. Nam, M.-H. Kim, J.-H. Boo (Sungkyunkwan Univ.) ........ 45[P1-A19] Donor-Acceptor Type Blue Fluorescent Emitters with Diphenylaminofluorene Derivatives
		
K.H. Lee1, S. Oh1, Y.K. Kim2, S.S. Yoon1 (1Sungkyunkwan Univ., 2Hongik Univ.) ........ 47[P1-A20] Preparation of SiO2 Passivation Thin Film for Improve the OLED Life Time		
J.S. Hong1, K.H. Kim1 (1Kyungwon Univ.) ........ 49[P1-A21] The Effects of Plasma Treatments of ITO Electrode for OLEDs		
J.H. Wi, S.H. Kim, J.C. Woo, C.I. Kim (Chung-Ang Univ.) ........ 51– xii –

[Poster 1-B] Medical and Biological Application, and Atmospheric-Pressure Plasma Process[P1-B1] Helium Atmospheric Pressure Glow Discharge for Three-Dimensional Porous Scaffold
as a Pre-Wetting Process
I. Han, B. Vagaska, D.H. Lee, B.J. Park, J.-C. Park		
(Yonsei Univ. College of Medicine) ........ 53[P1-B2] Study on Improvement in Hydrophilic Property of Polymer Film by Pulsed Microplasma		A. Umeda, M. Blajan, K. Shimizu (Shizuoka Univ.) ........ 55[P1-B3] Pulsed Powered Microplasma Diagnostics

M. Blajan, K. Shimizu (Shizuoka Univ.) ........ 57[P1-B4] Low Temperature Deposition of SiOx Films by HMDSN/O2 Atmospheric Pressure Plasma		
C. Huang, S.-Y. Wu, C.-Y. Tsai (Yuan Ze Univ.) ........ 59[P1-B5] Effects of Photo-Irradiations in VUV and UV Regions on Chemical Bonding Statesof Polymers during Plasma Exposure
K. Cho1,4, K. Takenaka1,4, Y. Setsuhara1,4, M. Shiratani2,4, M. Sekine3,4, M. Hori3,4
		(1Osaka Univ., 2Kyushu Univ., 3Nagoya Univ., 4JST-CREST) ........ 61[P1-B6] Combinatorial Analysis of Plasma-Polymer Interactions for Soft Material ProcessingY. Setsuhara1,4, K. Takenaka1,4, K. Cho1,4, M. Shiratani2,4, M. Sekine3,4, M. Hori3,4
		(1Osaka Univ., 2Kyushu Univ., 3Nagoya Univ., 4JST-CREST) ........ 63[Poster 1-C] Plasma Simulation and Diagnostics[P1-C1] A High-Fidelity Computational Model of Electromagnetic Wave-Plasma Coupling Effects
in Capacitively Coupled Plasma Reactors 
L. Raja1, S. Mahadevan2, X. Yuan2
		(1The Univ. of Texas at Austin, 2Esgee Technologies Inc.) ........ 65[P1-C2] Modeling Wave Effects in CCP Reactors using CFD-ACE+		
A.N. Bhoj, M. Gyimesi, K. Shah, M. Megahed (ESI US R&D Inc.) ........ 67[P1-C3] Estimation of the Light Output Power and Efficiency of XeCl Barrier Discharge Excilamp
using a Drift – Diffusion Model for Various Voltage Waveforms
		
L.T. Doanh, S. Bhosle, G. Zissis (Univ. of Toulouse (UPS), INPT, CNRS) ........ 69[P1-C4] The Detailed Measurement of the Electron Density Peak in Microwave Plasma Source withResonant Cavity for TM Wave
S. Nakatsui, N. Katayama, S. Kogoshi (Tokyo Univ. of Science) ........ 71[P1-C5] Spatial Plasma Profile of the Dual Frequency Inductively Coupled Plasma Discharge
		
H.-S. Lee, S.-H. Seo, H.-Y. Chang (KAIST) ........ 73[P1-C6] Spatial Distribution of Dust Particle Controlled in Modulated-13.56 MHz RF Plasmas

K. Takahashi1, H.M. Thomas2, G.E. Morfill2
12
		( Kyoto Inst. of Technology, Max-Planck-Inst. for Extraterrestrial Physics) ........ 75[P1-C7] In Situ Monitoring of Plasma Etch Processes of Low-k Dielectrics using Quantum
Cascade Laser Absorption SpectroscopyN. Lang1, H. Zimmermann1, U. Macherius1, S. Zimmermann2, N. Ahner4, F. Blaschta2,

M. Schaller3, S.E. Schulz2,4, J. Röpcke1 (1INP Greifswald, 2Fraunhofer ENAS,
3		
Globalfoundries Dresden Module Two GmbH & Co. KG, 4Chemnitz Univ. of Technology) ........ 77[P1-C8] Optical Measurement of Plasma Arcing in RF Discharge

Y.H. Kim, H.Y. Chang (KAIST) ........ 79[P1-C9] Improvement of Radial Thermal Shielding of a Temperature Gradient Type Thermal Probe		
H. Matsuura, N. Inagaki, K. Nakano (Osaka Prefecture Univ.) ........ 81[P1-C10] An Indirect Method to Monitor Plasma Status in a Transformer Coupled Plasma		D. You1, S.K. Ahn2, H.Y. Chang1 (1KAIST, 2Korea Inst. of Energy Research) ........ 83[P1-C11] Optical Luminescence of GaN Thin Films Induced by High Energy Electrons in InductivelyCoupled Plasmas
K. Nakamura, Y. Guo, J. Gao, Y. Nakano, H. Sugai (Chubu Univ.) ........ 85
Break (15:05–15:15)– xiii –Session B Medical and Biological Application, andAtmospheric-Pressure Plasma Process (15:15–16:55, Digital Hall)
Chairpersons: T. Hirata, T. Ichiki[B-1]<Invited> Progress in Plasma Medicine:
Plasma Wound Treatment

15:15–15:55

G. Friedman (Drexel Univ.) ........ 87[B-2]

Detection of Plasma-Induced Damage on Transparent Polymer Films
15:55–16:15
using Total Internal Reflection Microscopy 		T. Ono1,2, R. Iizuka1,2, T. Akagi1,2, T. Funatsu1,2, T. Ichiki1,2 (1The Univ. of Tokyo, 2JST-CREST) ........ 89[B-3]

Improved Thickness Uniformity of Si Layer in SOI wafer by Numerically Controlled
16:15–16:35
Sacrificial Oxidation using Atmospheric-Pressure Plasma with Electrode Array System		K. Yoshinaga, Y. Sano, H. Mimura, S. Matsuyama, K. Yamauchi (Osaka Univ.) ........ 91[B-4]

Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid
16:35–16:55
Thermal Annealing using Thermal Plasma Jet
K. Makihara1, K. Matsumoto1, T. Okada2, N. Morisawa1, M. Ikeda1, S. Higashi1, S. Miyazaki3		(1Hiroshima Univ., 2Univ. of Ryukyu, 3Nagoya Univ.) ........ 93
Break (16:55–17:10)

Session D 3D Integration (17:10–18:10, Digital Hall)
Chairpersons: K. Nakamura, T. Tatsumi[D-1]<Invited> Front-End-Friendly Bumpless Wafer-on-Wafer (WOW) Technology
17:10–17:50
for 3D Integration and Applications
T. Ohba (The Univ. of Tokyo) ........ 95[D-2]

Investigation of Si Etch Reaction Induced by SF6/O2 Plasma
17:50–18:10

S. Amasaki1, T. Takeuchi1, K. Takeda1, K. Ishikawa1, H. Kondo1, M. Sekine1, M. Hori1,
		
N. Sakurai2, H. Hayashi2, I. Sakai2, T. Ohiwa2 (1Nagoya Univ., 2Toshiba Corp.) ........ 97

Friday, November 12, 2010 
Session E Thin Film Formation (9:00–10:00, Digital Hall)
Chairpersons: S. Higashi, K. Koga
[E-1]

<Invited> Improvement of Thermal Stability of MRAM Device with SiN Protective
9:00–9:40
Film Deposited by Pseudo Remote Plasma CVD
Y. Kawano, T. Nishimori, T. Shimazu, H. Kawasaki, M. Inoue		(Mitsubishi Heavy Industries, Ltd.) ........ 99[E-2]

Novel Precursors for SiCH Low-k Caps beyond the 22-nm Node:9:40–10:00
Reactions of Silacyclopentane Precursors in PECVD Process and Structural Analysesof SiCH Films 
H. Shimizu1,2, N. Tajima3, T. Kada4, S. Nagano1, Y. Shimogaki2
(1Taiyo-Nippon Sanso Co., 2The Univ. of Tokyo,
3		NIMS, 4Tri Chemical Laboratories Inc.) ...... 101

Session F Junction Formation (10:00–11:00, Digital Hall)
Chairpersons: K. Kinoshita, T. Matsuki[F-1]<Invited> Conformal Doping for FinFETs by a Novel Self-Regulatory Plasma
10:00–10:40
Doping Process 
Y. Sasaki1, K. Okashita1, S. Hayashi2, K. Nakamoto1, T. Kitaoka1,B. Mizuno1, M. Kubota2, M. Ogura2, O. Nishijima2
1
		( Ultimate Junction Technologies Inc., 2Panasonic Corp.) ...... 103[F-2]

Efficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma
10:40–11:00
Jet Induced Microsecond AnnealingK. Matsumoto1, S. Higashi1, A. Ohta1, H. Murakami1, S. Miyazaki2		(1Hiroshima Univ., 2Nagoya Univ.) ...... 105– xiv –

Break (11:00–11:15)

Session G Plasma Induced Surface Reaction (11:15–12:35, Digital Hall)
Chairpersons: K. Nojiri, H. Kokura[G-1]<Invited> Auger Electron Spectroscopy Study of the Chemical Reactions
11:15–11:55
on a Plasma Reactor Wall 
L. Stafford1,2, R. Khare2, J. Guha2, V.M. Donnelly2		(1Univ. of Montreal, 2Univ. of Houston) ...... 107[G-2]

Study of the Modifications Induced by Plasma VUV Light on Photoresists
11:55–12:15
for the Development of Cure Treatments to Improve Etch Resistance andLinewidth Roughness
M. Fouchier1, E. Pargon1, L. Azarnouche2, O. Luere1, K. Menguelti1, G. Cunges1,
		N. Sadhegi3, O. Joubert1 (1CNRS/LTM, 2ST Microelectronics, 3CNRS/LSP) ...... 109[G-3]
Mechanism of 193-nm Resist Cure by DC Superimposed Capacitively-Coupled Plasma 12:15–12:35
		
T. Katsunuma, K. Narishige, M. Hosoya, M. Honda (Tokyo Electron AT Ltd.) ...... 111
Lunch (12:35–13:35)

Poster Session 2 (13:35–14:55, Media Hall)
Chairpersons: K. Kurihara, T. Shirafuji[Poster 2-E] Thin Film Formation[P2-E1] Crystallization Behavior Changes Occurred by N Doping in GeSb Alloy		
H.K. Kim1, J.S. Roh2, D.J. Choi1 (1Yonsei Univ., 2Hynix Semiconductor Inc.) ...... 113[P2-E2] Different Crystallization Behavior between Ag-Doped and Si-Doped Sb-Rich GeSb Thin Films
		
N.H. Kim1, J.S. Roh2, D.J. Choi1 (1Yonsei Univ., 2Hynix Semiconductor Inc.) ...... 115[P2-E3] Reactive Sputter Deposited Silicon Oxynitride Films under Argon-Carbon Dioxide-Nitrogen
Atmospheres
T. Ashida, H. Omoto, T. Tomioka, A. Takamatsu (Central Glass Co., Ltd.) ...... 117[P2-E4] Influence of Nitrogen-Incorporation on the Electrochemical Performance of DLC Coating		
N.D. Nam, M.J. Kim, J.G. Kim (Sungkyunkwan Univ.) ...... 119[P2-E5] Ar/N2 Supermagnetron-Sputter Deposition of a-CNx:H Films under Wafer Bias Application
		
H. Kinoshita, G. Ohno, M. Kubota (Shizuoka Univ.) ...... 121[P2-E6] Epitaxial Growth of (100)b-FeSi2 Film on 4H-SiC(001)
K. Akiyama, T. Kadowaki, S. Kaneko, Y. Hirabayashi		(Kanagawa Industrial Technology Center) ...... 123[P2-E7] Cubic Shape of MgO Deposited on Silicon (001)S. Kaneko1,2, K. Akiyama1, T. Ito1, M. Yasui1, T. Ozawa1, Y. Hirabayashi1,
M. Soga1, Y. Motoizumi1, H. Funakubo2, M. Yoshimoto2
1
		( Kanagawa Industrial Technology Center, 2Tokyo Inst. of Technology) ...... 125[P2-E8] Metastability of Oxygen Atoms in the Sputter-Deposited ZnO Films
		
A. Morita, F. Watanabe, H. Shirai (Saitama Univ.) ...... 127[P2-E9] Physical Properties of ZnO Thin Films on Glass and PES Substrates by RF Magnetron
Sputtering System
S.-H. Nam, M.-H. Kim, S.D. Lee, J.-H. Boo (Sungkyunkwan Univ.) ...... 129[P2-E10] The Surface Energy-Dictated Initial Growth of a Pentacene Film on a Polymeric Adhesion
Layer for Field-Effect Transistors
J. Park1, J.-H. Bae2, W.-H. Kim2, S.-D. Lee2, J.S. Gwag3, D.W. Kim1, J.S. Choi1		(1Hongik Univ., 2Seoul National Univ., 3Yeungnam Univ.) ...... 131[P2-E11] Enhancement of Electron Field Emission Properties of Carbon Nanowalls by N2 Plasma
Surface Treatment
T. Horaguchi1, Y. Nihashi1, M. Hiramatsu1, W. Takeuchi2, T. Obayashi2,		
H. Kondo2, M. Hori2 (1Meijo Univ., 2Nagoya Univ.) ...... 133– xv –

[P2-E12] Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Annealing
Process with Metal Layers Coating
		
W.-C. Shih1, P.-C. Huang1, I.-N. Lin2 (1Tatung Univ., 2Tamkang Univ.) ...... 135[P2-E13] Deposition of Fluorocarbon Film with 1,1,1,2-tetrafluoroethane Plasma Polymerization
Based on RF-Capacitively Couple Mode Discharge		
C. Huang, C.-I. Lin, C.-Y. Tsai (Yuan Ze Univ.) ...... 137[Poster 2-G] Plasma Induced Surface Reaction[P2-G1] Surface Modification of Polypropylene Membrane by RF Methane/Oxygen Mixture Plasma
Treatment
C.-Y. Tsai, R.-S. Juang, C. Huang (Yuan Ze Univ.) ...... 139[P2-G2] Observation of 193-nm Photoresist Surface Exposed to Etching Plasma Employing C5HF7 Gas
ChemistryH. Yamamoto1, Y. Miyawaki1, K. Takeda1, K. Ishikawa1, H. Kondo1, M. Sekine1,
		
M. Hori1, A. Ito2, H. Matsumoto2 (1Nagoya Univ., 2Zeon Corp.) ...... 141[P2-G3] Investigation of the Modified ArF Photoresist Surface during Fluorocarbon Plasma Etching Process
T. Takeuchi1, S. Amasaki1, K. Takeda1, K. Ishikawa1, H. Kondo1, H. Toyoda1,

M. Sekine1,2, M. Hori1,2, S.-Y. Kang3, I. Sawada3
1		( Nagoya Univ., 2JST-CREST, 3Tokyo Electron Ltd.) ...... 143[Poster 2-H] Plasma Etching[P2-H1] Replacement Gate Formation Etch Development
P. Pan1, P. Friddle2, W. Huang2, H.H. Chen1, T.W. Kim2, J.H. Liao1, G. Kamarthy2
		(1United Microelectronics Corp., 2Lam Research Corp.) ...... 145[P2-H2] Very Narrow Si Trench Fabrication by New Mask Process

J. Sakamoto1,2, H. Kawata1,2, M. Yasuda1,2, Y. Hirai1,2
		
(1Osaka Prefecture Univ., 2JST-CREST) ...... 147[P2-H3] A Study on the High-Aspect-Ratio Si Etch

K.Y. Yang, Y.S. Kang, J.C. Park, S. Lim, S.S. Jeong, S.W. Nam
		(Samsung Electronics Co., Ltd.) ...... 149[P2-H4] Global Plasma Modeling Based Analysis of Si Master Etching in the Sidewall Transfer
Nanoimprint Lithography using Inductively Coupled Cl2/O2 Plasma
Y.-H. Ham1,2, H.W. Lee3, K.-S. Park1, D.P. Kim1, K.-H. Baek1, L.-M. Do1, K.-H. Kwon2
		(1Electronics and Telecommunications Research Inst., 2Korea Univ., 3Hanseo Univ.) ...... 151[P2-H5] Dry Etching of SiC by using Capacity Coupled Pure NF3 and NF3/Ar Mixture Gas Plasmas
		
Y. Kotaka1, T. Tojo2, M. Inaba1, A. Tasaka1 (1Doshisha Univ., 2Toyo Tanso, Co., Ltd.) ...... 153[P2-H6] Etching of MTJ (Magnetic Tunnel Junction) Layer using CO/NH3 in an Inductively Coupled
PlasmaJ.Y. Park1, S.-K. Kang1, M.H. Jeon1, G.Y. Yeom1,21		( SKKU Advanced Inst. of Nano Technology, 2Sungkyunkwan Univ.) ...... 155[P2-H7] Etch Properties of the TiN Thin Film in the Metal-Insulator-Metal Capacitor using Inductively
Coupled Plasma
J.S. Park, J.C. Woo, C.I. Kim (Chung-Ang Univ.) ...... 157[P2-H8] Etch Characteristics of TiO2 Thin Films using the Metal-Insulator-Metal Capacitor in a HighDensity Plasma
J.C. Woo, C.I. Kim (Chung-Ang Univ.) ...... 159[P2-H9] A Study on Dry Etching for Profile and Selectivity of ZnO Thin Films by using Inductively
Coupled Plasma
K.-M. Heo, J.-C. Woo, C.-I. Kim (Chung-Ang Univ.) ...... 161[P2-H10] Uncooled Microbolometer Fabrication using Step Via Dry Etching Technology
		
T.Y. Kang1, W.S. Jang2, H.G. Lee2, K.H. Kim1 (1Kyungwon Univ., 2OCAS Company) ...... 163[P2-H11] Estimation of Ion/Radical Flux from Mask Selectivity and Etching Rate, Calibrated by
Topography Simulation
T. Ohmine1, V. Despande2, H. Takada1, T. Ikeda3, H. Saito3, F. Kawai3, K. Hamada 3		(1Nihon Synopsys G.K., 2Synopsys Switzerland LLC, 3Toyota Motor Corp.) ...... 165– xvi –

[P2-H12] Measurement of Negative Ions Generated on the Si Etched Surface

T. Hayashi1, S. Murai1, F. Sato1, A. Kono1, N. Mizutani2, K. Suu2
		
(1Nagoya Univ., 2ULVAC Inc.) ...... 167[P2-H13] High Density F – Negative-Ion Source by Utilizing Magnetized SF6 Plasma		
M.A. Imtiaz, T. Mieno (Shizuoka Univ.) ...... 169[Poster 2-J] Plasma Induced Damage[P2-J1] Capacitively Coupled Radio Frequency Helium Plasma Etch Damage to TiO2 Thin Film Surfaces

R. Kawakami1, A. Takeichi1, M. Niibe2, T. Inaoka1, K. Tominaga1
		(1The Univ. of Tokushima, 2Univ. of Hyogo) ...... 171[P2-J2]

Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual DefectSites
Y. Nakakubo, A. Matsuda, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) ...... 173[P2-J3]Mechanism of Damage Generation on Porous SiOCH during Resist Strip using N2/H2 and CO2
PlasmasT. Imamura, K. Kurihara, H. Hayashi, T. Ohiwa (Toshiba Corp.) ...... 175
Break (14:55–15:05)

Session H

Plasma Etching (15:05–16:25, Media Hall)
Chairperson: S.Y. Kang, T. Yagisawa[H-1]
Study of Si Surface Roughness in FEOL Etch Applications
15:05–15:25
		J. Guha, G. Kamarthy, L. Braly (Lam Research Corp.) ...... 177[H-2]

Molecular Dynamics Analysis of Surface Roughness during Si Etching
15:25–15:45
in Chlorine-Based Plasmas
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) ...... 179[H-3]

C5HF7 Chemistry for Highly Selective Etch of SiO2 over SiN and Si
15:45–16:05
Y. Miyawaki1, Y. Kondo1, H. Yamamoto1, A. Ito2, H. Matsumoto2, K. Takeda1, H. Kondo1,
		
K. Ishikawa1, T. Hayashi1, M. Sekine1, M. Hori1 (1Nagoya Univ., 2Zeon Corp.) ...... 181[H-4]

Mechanisms of Selective Etching for Magnetic Thin Films by Reactive Plasmas
16:05–16:25
for MRAM Applications
K. Karahashi, T. Ito, S. Hamaguchi (Osaka Univ.) ...... 183
Break (16:25–16:40)

Session J Plasma Induced Damage (16:40–18:00, Digital Hall)
Chairpersons: M. Nakamura, H. Hayashi[J-1]

Trade-Off Relationship between Si Recess and Defect Density Formed by
16:40–17:00
Plasma-Induced Damage in Planar MOSFETs and the Optimization Strategies		K. Eriguchi, Y. Nakakubo, A. Matsuda, Y. Takao, K. Ono (Kyoto Univ.) ...... 185[J-2]

Si Recess of Poly-Si Gate Etching: Damage Enhanced by Ion Assisted
17:00–17:20
Oxygen Diffusion 
T. Ito1, K. Karahashi1, M. Fukasawa2, T. Tatsumi2, S. Hamaguchi1		(1Osaka Univ., 2Sony Corp.) ...... 187[J-3]

Comparative Study of Plasma-Charging Damage in High-k Dielectric and17:20–17:40
p-n Junction and their Effects on Off-State Leakage Current of MOSFETs
		M. Kamei, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) ...... 189[J-4]

Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature17:40–18:00
Controlled Photoreflectance Spectroscopy		
A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) ...... 191

Closing Remark (18:00–18:05, Digital Hall)

K. Kurihara– xvii –