AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/157

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between the primarycircuit (high power) and the secondary circuit (electronic circuit).

●● Battery Pack Monitoring

The DHAB family gives you a choice of having different current
measuring ranges in the same housing (from ±20 up to ±900 A).

Features●● Hybrid Vehicles●● EV and Utility Vehicles.

Principle of DHAB Family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.

●● Open Loop transducer using the Hall effect●● Low voltage application●● Unipolar +5 V DC power supply●● Primary current measuring range up to ±100 A for channel 1
and ±350 A for channel 2●● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C●● Operating temperature range: −40 °C < T < +125 °C●● Output voltage: full ratio-metric (in sensitivity and offset).

Special features●● Dual channel sensor for wider measurement range andredundancy.
●● UC capacitor set to 1 μF for Ford EMC standards compiance

The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP
The Hall voltage is thus expressed by:
VH = (cH / d) × IH × a × IP
Except for IP, all terms of this equation are constant.
Therefore:
VH = b × IPaconstantbconstantcH
Hall coefficient
dthickness of the Hall plate
IH
current across the Hall plates
The measurement signal VH amplified to supply the user output
voltage or current.

Advantages●● Good accuracy for high and low current range●● Good linearity●● Low thermal offset drift●● Low thermal sensitivity drift●● Hermetic package.

Fig. 1: Principle of the open loop transducer.

N° 52.B6.99.157.0
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DHAB S/157
Dimensions DHAB S/157 (in mm)

Drawing for information only
Mechanical characteristics●● Plastic case

>PBT-GF30<●● Magnetic core

Channel 1: FeNi alloy

System architecture (example)
LEM - DHAB sensor+5 V

UC

Typical application +5 V
Schematic interface

47 nF

Channel 2: FeSi alloy●● Electrical terminal coating

Brass tin plated●● Mass

82 g

Mounting recommendation●● Mating connector P/N

TYCO 1-1456426-5●● Max assembly torque

2.5 N٠m (for M4 x 0.7)●● Soldering typeN/A●● IP

Channel 1IP M
Primarycurrent

CL68 nFGnd 5

1 with G in (V/A)=  U × V out − V O  ×GC●● Vout > Vo when IP flows in the positive direction (see arrow onRRL

CL

68 nF

Gnd

CGnd

Gnd GndChannel 2

Gnd

Remarks

Gnd

Gnd

RRL

Gnd Gnd

CGnd

RL > 10 kW optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)drawing).

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DHAB S/157
Absolute ratings (not operating)Parameter

Maximun supply voltage

SymbolUnitUC maxVSpecification
Min

TypicalConditions

Max
8.5

Continuous

14

Over voltage, 1 min−14

Reverse voltage, 1 min @TA= 25 °C

Ambient storage temperature

TS°C

Electrostatic discharge voltage

UESDkV2

JESD22-A 114-B class 2kV

2.5

IEC 60664 part 1

RMS voltage for AC insulation test, 50 Hz, 1 minUddCp

Creepage distanceComparative traking index

CTIMaximum output currentIout max

3.1mm

3.1425mA

Maximum output voltage (Analog)

Vout max

VInsulation resistance

RINSMΩ

Output short circuit maximum duration

125mm

dCIClearance−40tc−1010Continuous

8.5Continuous

14

Outpout over voltage,1 min @TA= 25 °C

500

500 V DC, ISO 16750

s120

Operating characteristics in nominal range (IP N)
Parameter

Symbol

VICCurrent consumption

RL

Load resistanceCL

Capacitive loading
Ambient operating temperature

Primary current, measuring range
Primary nominal DC or rms current

mA−1kΩ

10nF

TA°C

TypicalMax55.25

1520

IP M channel 1
IP N channel 1

1100−1065High accuracy−40125

Reduced accuracy

A−100A−100100100
2.5mV/A

20ResolutionmV

2.5

Output clamping voltage min 1)

V

0.2

0.25

0.3

V

4.7

4.75

4.8

Ω

1

10G

Output clamping voltage max 1)

VS ZRout

Output internal resistanceFrequency bandwidth 2)

BWkHz

1.1

Start-up timetstart

ms25Setting time after over load

msεrRatiometricity error

Vno ppPeak-to-peak noise voltage@ TA = 25 °C@ UC = 5 VVSensitivity 3)Conditions

1

Performance Data channel 1

VOOffset voltage

4.75

mA

Iout max

Maximum output current

Specification
Min

Electrical DataUC

Supply voltage 1)

Unit@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB
20025%

−0.6

0.6

mV

−1010

Performance Data channel 2
Primary current, measuring range
Primary nominal DC or rms current

IP M channel 2
IP N channel 2
VOOffset voltage

A−350

A−350

350
350
2.5

mV/A

5.7

ResolutionmV

2.5

Output clamping voltage min 1)

V

0.2

0.25

0.3

V

4.7

4.754.8Ω

110GSensitivity 3)

Output clamping voltage max 1)
Output internal resistance

VS ZRoutFrequency bandwidth 2)

BWkHz

1.1

Start-up timetstart

ms25Setting time after over load
Ratiometricity error
Peak-to-peak noise voltage

msεrVno pp@TA = 25 °C@ UC = 5 V

V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB
200
25%−0.60.6

mV−1010Notes: 1) The output voltage Vout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:I =  5 × V out − V O  × 1 with G in (V/A)
P UCG2)
3)

Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC (see feature paragraph in page 1.). The gain written in the ASIC is negative in order to reverse the positive direction of the current on the outline drawing.
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DHAB S/157
Accuracy
Channel 1
Parameter

SymbolSpecification

Unit

Min

TypicalConditions

Max

Electrical Data
Electrical offset current

IO EA

Magnetic offset current

IO M

AIO

Offset current@ TA = 25 °C

−0.15

0.15

−0.230.23@ −10 °C < T < 65 °C−0.350.35@ −40 °C < T < 125 °C%

εLLinearity error@ TA = 25 °C

±0.03

A

εG

Sensitiviy error@ TA = 25 °C±0.07%±0.4@ TA = 25 °C±1.0@ −10 °C < T < 65 °C±1.5@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of fullrange

Accuracy table

Parameter

SymbolUnit

Temperature

Accuracy @ 0 A
XAccuracy @ ±50 A

AAccuracy @ ±100 A−40 °C−20 °C0 °C

25 °C

65 °C

125 °C

0.35

0.29

0.23

0.15

0.23

0.35

1.50

1.25

1.01

0.70

1.02

1.50

3.75

2.98

2.21

1.25

2.25

3.75

DHAB S/157 Channel 1: Absolute Accuracy X (A)4.00

Absolute accuracy (A)

3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00

-40-20020

4060

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±50A

Accuracy @ ±100A

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DHAB S/157

Accuracy
Channel 2
Parameter

SymbolSpecification

Unit

Min

TypicalConditions

Max

Electrical Data
Electrical offset current

IO EA

Magnetic offset current

IO M

AIO

Offset current

Linearity error%

SymbolUnit@ TA= 25 °C

−1

1

−1.32

1.32

@ −10 °C < T < 65 °C

−1.8

1.8

@ −40 °C < T < 125 °C%εL@ TA= 25 °C±0.25A

εGSensitiviy error@ TA= 25 °C±0.6±0.4@ TA = 25 °C±0.8@ −10 °C < T < 65 °C±1.2@ −40 °C < T < 125 °C±0.5@ TA = 25 °C, @ Uc = 5 V, of full range

Accuracy table

Parameter

Accuracy @ 0 A
Accuracy @ ±175 AX

AAccuracy @ ±350 A

Temperature−40 °C−20 °C0 °C

25 °C

65 °C

125 °C

1.50

1.35

1.19

1.00

1.20

1.50

5.25

4.71

4.17

3.50

4.20

5.25

9.25

7.94

6.63

5.00

6.70

9.25

DHAB S/157 Channel 2: Absolute Accuracy X (A)10.00

Absolute accuracy (A)

9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00

-40

-2002040

60

80

100120140

Temperature (°C)
Accuracy @ 0 A

Accuracy @ ±175A

Accuracy @ ±350A
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DHAB S/157
PERFORMANCES PARAMETERS DEFINITIONS

Response time (delay time) tr:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

VoutI [A]Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT90 %VoutIPtrIP

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:
The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

Magnetic offset:
The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primarycurrent.

t [µs]

Sensitivity:
The transducer’s sensitivity G is the slope of the straight line
Vout = f (IP), it must establish the relation:
Vout (IP) = UC/5 (G × IP + VO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Sensitivity with temperature:
The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.

Linearity:

The sensitivity variation GT is the maximum variation (inppm or %) of the sensitivity in the temperature range:

The maximum positive or negative discrepancy with a reference

GT = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.

straight line Vout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.

The sensitivity drift TCGAV is the GT value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

VoutNon linearity exampleOffset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary current
is zero. The ideal value of VO is UC/2. So, the difference ofReferencestraight line
Max linearity error

IPLinearity variation in IP N

VO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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DHAB S/157

Name

StandardConditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4
IEC 60068-2-1 Ad−40 °C, 240 h; power ON

HTOE (high temperature operating endurance test)

ISO 16750-4
IEC 60068-2-2 Bd

1000 h; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles ; offset
monitored

Thermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak) , 1000 cycles,with connectors => 667 h (28 days)

High temperature and humidity endurance

JESD22-A101

1000 h; 85 °C / 85 % RH; power ON; Monitored once a day

Salt fog

IEC 60068-2-11

96 h @ 35 °C, 5 % of salt water solution, characterization
before and after test only at 25 °C and UC nominal−40 °C, 240 h; no power supply

Mechanical tests
ISO 16750-3 § 4.1.2.4
mass suspended

Vibration in temperatureContinuous monitoring: offsetShocks

ISO 16750-3§ 4.2

Power ON. Profile 1 (500 m∙s-2; 11 ms) 10 shocks per axe Halfsinusoidal pulse

Free Fall test

ISO 16750-3

3 axis, 2 directions by axis;1 sample per axis; 1 m; concretefloor

EMC test
B.C.I. (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz.
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100 V/m (RMS); from 400 MHz to 1 GHz Functionalclass: A
Level: 70 V/m (RMS) from 1 GHz to 2 GHz Functional class: AEmission

CISPR 25

IEC 61000-4-2 +ISO 10605(07/2008)

E.S.D. not supplied

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests
Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14

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