AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
DHAB S/161

Introduction

Automotive applications

The DHAB family is best suited for DC, AC, or pulsed currents
measurement in high power and low voltage automotiveapplications. It features galvanic separation between the primarycircuit (high power) and the secondary circuit (electronic circuit).

● Battery Pack Monitoring

The DHAB family gives you a choice of having different current
measuring ranges in the same housing (from ±20 up to ±900 A).

Features● Hybrid Vehicles● EV and Utility Vehicles.

Principle of DHAB Family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hallvoltage, is generated by the primary current IP to be measured.

● Open Loop transducer using the Hall effect● Low voltage application● Unipolar +5 V DC power supply● Primary current measuring range up to ±100 A for channel 1
and ±800 A for channel 2● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C● Operating temperature range: −40 °C < T < + 125 °C● Output voltage: full ratio-metric (in sensitivity and offset).

The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP
The Hall voltage is thus expressed by:
UH = (cH / d) × IH × a × IP

Except for IP, all terms of this equation are constant.
Therefore:

redundancy.

U H = b × IPaconstantb
constantcHHall coefficientdthickness of the Hall plate
IH
current across the Hall plates

Advantages

The measurement signal UH amplified to supply the user output
voltage or current.

Special feature● Dual channel sensor for wider measurement range and● Good accuracy for high and low current range● Good linearity● Low thermal offset drift● Low thermal sensitivity drift+ UCIP● Hermetic package.

Uout
- UC

Primary Current IP0V

Isolated Output Voltage Uout

Fig. 1: Principle of the open loop transducer.

N° 52.B6.99.161.0
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LEM International SA
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DHAB S/161
Dimensions DHAB S/161 (in mm)

UoutUoutUC

Mechanical characteristics

System architecture (example)● Plastic case

>PBT-GF30<● Magnetic core

Channel 1: FeNi alloy

LEM - DHAB sensor.

Channel 2: FeSi alloy● Electrical terminal coating

Brass tin plated● Mass82 g.

TYCO 1-1456426-5● Max assembly torque

2.5 N٠m (for M4 x 0.7)

● Clamping force must be applied on the compression limiterPrimarycurrentGndChannel 1

CL68 nF
Gnd

N/A.

RRL

CL68 nF 5 1
IP = × U out − U O  × with S in (V/A)
 UC
 SGndGnd● Uout > Uo when IP flows in the positive direction (see arrow onCGnd

Gnd GndChannel 2Remarksdrawing).

47 nF
Gnd

● Mating connector P/N●Typical application +5V
Schematic interface.

1 uF

IP M

Mounting recommendation● Soldering type+ 5V

UCRRL

Gnd Gnd

CGnd

RL > 10 kΩ optional resistor for signal line diagnostic
CL < 100 nF EMC protection
RC Low pass filter EMC protection (optional)

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DHAB S/161

Absolute ratings (not operating)Parameter

Symbol Unit

Maximum supply voltage

MinSpecification
TypicalMax

VUC maxConditions

8.5

Continuous

14

Over voltage, 1 min−14

Reverse voltage, 1 min @TA= 25 °C

Ambient storage temperature

TS°C

Electrostatic discharge voltage

UESDkV2

JESD22-A 114-B class 2

RMS voltage for AC insulation test, 50 Hz, 1 min

UdkV

2.5

IEC 60664 part 1

Creepage distancedCpmm

ClearancedCImm

Comparative tracking index

CTIMaximum output current

Iout max

mA

−40

125

3.1
3.1
425

Maximum output voltage (Analog)

Uout maxV

Insulation resistance
Output short-circuit duration

RINStcMΩ
s

−10

10

Continuous

8.5

Continuous

14

Outpout over voltage,1 min @TA= 25 °C

500

500 V DC, ISO 16750
120

Operating characteristics in nominal range (IP N)

Parameter
Supply voltage 1)
Current consumption
Maximum output current
Load resistanceLoad capacitanceAmbient operating temperature
Primary current, measuring range
Primary nominal RMS current
Offset voltage

Specification
TypicalMax

SymbolUnitUC
IC

Iout max

Electrical Data
VmAmA

RL

ΚΩ

CLnF

1

100TA°C−10−4065
125

Performance Data channel 1
IP M channel 1
A−100100

IP N channel 1AMin
4.75

515−1

5.25
20
1

10−100100

V

2.5

mV/A

20Resolution

mV

2.5

Output clamping voltage min 1)

V0.2

0.25

0.3

V

4.7

4.75

4.8

Ω

110kHz1.1

ms25

UOSSensitivity

Output clamping voltage max 1)
Output internal resistanceFrequency bandwidth 2)

US ZRoutBW

Power up time
Setting time after over load
Ratiometricity error
Peak-to-peak noise voltageConditionsmsHigh accuracy
Reduced accuracy@TA = 25 °C@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB

200
25εr

%

−0.60.6

Uno ppmV−1010Performance Data channel 2
Primary current, measuring range

IP M channel 2

A−800

Primary nominal RMS current

IP N channel 2A−800

UOV

2.5mV/A

2.5ResolutionmV

2.5

Output clamping voltage min 1)

V0.2

0.25

0.3V

4.7

4.75

4.8

Ω110kHz

1.1

ms25

Offset voltage

SSensitivity

Output clamping voltage max 1)
Output internal resistanceFrequency bandwidth 2)

US Z
RoutBW

Power up time
Setting time after overload
Ratiometricity error
Peak-to-peak noise voltage

800800@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ UC = 5 V@ −3 dB
200tS

ms%

−0.6

0.6Uno ppmV−1010εr@TA = 25 °C25Notes: 1) The output voltage Uout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula: 5
 1
IP = × U out − U O  × with S in (V/A)
 UC
 S2)

Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC (see feature paragraph in page 1.)
Page 3/7

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LEM International SAChemin des Aulx 81228 PLAN-LES-OUATES Switzerland
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DHAB S/161Error
Channel 1

Parameter

SymbolUnit

Min

Electrical Data

Specification
TypicalMax

Conditions

Electrical offset current

IO E

A±0.07@TA = 25 °C

Magnetic offset current

IO M

A±0.03@TA = 25 °C

Offset current

AIO−0.150.15@TA = 25 °C−0.230.23@ −10 °C < T < 65 °C

0.35@ −40 °C < T < 125 °C−0.35±0.4
Sensitiviy error

εS%±1.0±1.5

Linearity error

εL%±0.5@TA = 25 °C@ −10 °C < T < 65 °C@ −40 °C < T < 125 °C@TA = 25 °C, @ UC = 5 V, offull range

Error table

Parameter

SymbolUnit

Temperature

Error @ 0 A
Error @ ±50 A

AεError @ ±100 A−40 °C−20 °C

0 °C

25 °C

65 °C

125 °C

0.35

0.29

0.23

0.17

0.23

0.35

1.50

1.25

1.01

0.70

1.02

1.50

3.75

2.98

2.21

1.25

2.25

3.75

100120

DHAB S/161 Channel1: Error ε4Error (A)

3.5
32.5
21.5
10.5
0-40-20020406080

140

Temperature (°C)
Error @0 AError @±50 A

Error @±100 A

Error @0 A 1 sigma

Error @±50 A 1 sigma

Error @±100 A 1 sigma

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DHAB S/161
Error
Channel 2Parameter

Specification
Min
TypicalMax
Electrical Data

SymbolUnit

Electrical offset current

IO EA

±0.6

@TA= 25 °C

Magnetic offset current

IO MA±0.25@TA= 25 °C

Offset current

AIO

Conditions

−1.4

1.4

@TA= 25 °C−1.961.96@ −10 °C < T < 65 °C−2.82.8@ −40 °C < T < 125 °C±0.4
Sensitiviy errorεS%@TA = 25 °C±0.8±1.2@ −10 °C < T < 65 °C@ −40 °C < T < 125 °C

Linearity error

εL%

±0.5

@TA = 25 °C, @ UC = 5 V, offull range

SymbolUnit

Error table

Parameter

Error @ 0 A
Error @ ±400 A

AεError @ ±800 A

Temperature−40 °C−20 °C0 °C

25 °C

65 °C

125 °C

3.75

2.98

2.211.252.25

3.75

16.00

13.23

10.46

7.00

10.6

16.00

24.43

20.3

16.17

11.00

16.37

24.43

DHAB S/161 Channel2: Error ε262422Error (A)201816141210864
20-40-20020

40

60

80

100120140

Temperature (°C)
Error @0 A

Error @±400 A

Error @±800 A

Error @0 A 1 sigma

Error @±400 A 1 sigma

Error @±800 A 1 sigma

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DHAB S/161
PERFORMANCES PARAMETERS DEFINITIONSDelay time tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

Uout

I [A]

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %Uout

IPtD 90IPDefinition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:
The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

Magnetic offset:
The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primary
current.

t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Sensitivity with temperature:
The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.

Linearity:

The sensitivity variation ST is the maximum variation (inppm or %) of the sensitivity in the temperature range:

The maximum positive or negative discrepancy with a reference

ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.

straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.

The sensitivity drift TCSAV is the ST value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Uout

Non linearity example

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary current
is zero. The ideal value of UO is UC/2. So, the difference ofReference
straight line
Max linearity error

IPLinearity variation in IP N

UO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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DHAB S/161
Name

StandardConditions

Low temperature storage test

ISO 16750-4
IEC 60068-2-1

Low temperature operation test

ISO 16750-4
IEC 60068-2-1 Ad−40 °C, 240 h; power ON

HTOE (high temperature operating endurance test)

ISO 16750-4
IEC 60068-2-2 Bd

1000 h; power supply @ 125 °C

Powered thermal cycle endurance

IEC 60068-2-14 Nb−40 °C (20 min), +125 °C (20 min), 600 cycles ; offset
monitored

Thermal shock

IEC 60068-2-14 Na−40 °C (20 min soak) / 125 °C (20 min soak) , 1000 cycles,with connectors => 667 h (28 days)

High temperature and humidity endurance

JESD22-A101

1000 H; 85 °C / 85 % HR; power ON; Monitored once a daySalt fog

IEC 60068-2-11

96 h @ 35 °C , 5 % of salt water solution, characterization
before and after test only at 25 °C and UC nominal−40 °C, 240 h; no power supply

Mechanical tests
Vibration in temperature

ISO 16750-3 § 4.1.2.4
mass suspended

Continuous monitoring: offset

ShocksISO 16750-3§ 4.2

Power ON. Profile 2 (500 m∙s-2; 6 ms) 10 shocks per axe
Half sinusoidal pulse

Free Fall test

ISO 16750-3

3 axis, 2 directions by axis; 1 sample per axis; 1 m ;concrete floor

EMC test
B.C.I. (bulk current injection)

ISO 11452-4
Annex E.1.1, Table E.1

From 1 to 400 MHz.
Level 1: 60 mA; Functional class: A
Level 2: 100 mA; Functional class: A
Level 4: 200 mA; Functional class: B

Radiated electromagnetic immunity

ISO 11452-2
GMW 3097 (04.2012)
table 12 p.21 (level 2)

Level: 100 V/m (rms); from 400 M to 1 GHz Functionalclass: A
Level: 70 V/m (rms) from 1 G to 2 GHz Functional class: AEmission

E.S.D. not supplied

CISPR 25

IEC 61000-4-2 +ISO 10605(07/2008)

Table 9, Class 5 by default
Freq = 150 kHz to 2.5 GHz
Contact discharge: ±4 kV & ±8 kV
Air discharge: ±15 kV
Functionnal class: A after reconnection(150 pF, 330 Ω)Connector tests
Connector to connector engagement force

GMW 3191 § 4.11

Locked connector disengagement force

GMW 3191 § 4.13

Unlocked connector disengagement force

GMW 3191 § 4.14

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06May2020/version 2LEM reserves the right to carry out modifications on its transducers,in order to improve them, without prior notice

LEM International SA
Chemin des Aulx 81228 PLAN-LES-OUATES Switzerland
www.lem.com