APPLICATION NOTE
www.onsemi.com

Introduction to 1200 V SiC
MOSFET Modules for
On-Board Charger
Applications:
NVXK2KR80WDT,
NVXK2TR80WDT, &NVXK2TR40WDT
AND90017/D
Summary

Module Introduction

As the trend in electric vehicle On−Board Charger (OBC)
design moves rapidly to higher power and higher switchingfrequency operation, the demand for SiC MOSFETs for thisapplication is also growing. Many high voltage discrete SiC
MOSFETs are already in the marketplace and engineers aredesigning OBC systems to take advantage of theirperformance benefits. It is also noted that the changes in the
PFC topology are remarkable. Designers are adopting theBridgeless PFC topology using the SiC MOSFET due to its
superior switching performance and small reverse recovery
characteristics. Employing a SiC MOSFET module is
known to provide benefits in terms of electrical and thermal
performance as well as power density. onsemi has shown
outstanding performance in the automotive module designarea using Si MOSFET technology and now initiates a lineof SiC MOSFET modules to enable OBC design
improvements, including a PFC and DC/DC modules using
1200 V SiC devices. In this application note, these modules
are introduced, and guidance is provided for employing thisnew line of modules.

Figures 1 and 2 show uni−directional and bi−directional
OBC circuit topologies that are among those receiving
significant attention in the EV market. onsemi’s new line oftransfer molded, high voltage isolated multi−chip modules
is introduced with three initial members of the family: NVXK2KR80WDT Vienna rectifier module featuring
1200 V 80 mW SiC MOSFET and SiC and Si diodes
mounted on Al2O3 ceramic substrate, NVXK2TR80WDT dual half bridge module featuring
1200 V 80 mW SiC MOSFETs mounted on Al2O3
ceramic substrate, and NVXK2TR40WXT dual half bridge module featuring
1200 V 40 mW SiC MOSFETs mounted on AlN ceramic
substrate for increased current handling capability.
Summary package information and schematics for thesethree modules are given in Figures 3 and 4.

Figure 1. Typical Module Application: Uni−Directional On−Board Charger with Vienna Rectifier PFC Stage Semiconductor Components Industries, LLC, 2020

May, 2023 − Rev. 2

1

Publication Order Number:AND90017/D

AND90017/D

Figure 2. Alternative Module Application: Bi−Directional On−Board Charger Using Multiple Half−Bridges

Figure 3. 1200 V SiC MOSFET Module Package Outline(a) NVXK3KR80WDT Vienna(b) NVXK2TR80WDT & NVXK2TR80WXT Dual Half Bridge

Figure 4. Module Design Variations

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AND90017/D
APPLICATIONS INFORMATION
Significant design resources are available from onsemi
and from the open technical literature which will aid theautomotive OBC designer to properly use SiC MOSFETs invarious circuit topologies. These include the following
resources available from www.onsemi.com:
 AND90103/D onsemi M1 1200 V SiC MOSFETs andModules: Characteristics and Driving Recommendations
 HDBK853/D Power Factor Correction Handbook
 AND90061/D Half−Bridge LLC Resonant Converter
Design Using NCP4390/NCV4390
 TND6318/D On Board Charger (OBC) LLC Converter AND9957/D On Board Charger (OBC) Three−Phase
PFC Converter EVBUM2731/D 6.6 kW On Board EV Charger (SiC
Model) Evaluation Board User’s Manual EVBUM2784/D 6.6 kW Totem−Pole Demo Board User’s
ManualGuidance is also available to aid practicing engineers in
the modeling aspects of developing a complex system suchas an automotive OBC:
 AND9783/D How to Use Physical and Scalable Models
with SIMetrix, OrCAD, and LTSpice AND90096/D Usage of SIMetrix to Study MOSFETs
Thermal Behaviors on Heatsink
The reader is also encouraged to review available
application notes from onsemi that provide useful
information on related products with respect to mechanicalmounting and PCB design: AND9922/D ASPM27 Series Package Assembly
Guidance AND90036/D DIP−26 Series: New Transfer MoldedPower Integrated Module (TMPIM) for Industrial Drives(pages 8ff)
A fine paper by Thangavela, et al, regarding the Vienna
topology of the PFC is cited in reference [1], as well as amaster’s thesis by Yutong Zhu of the University of
Wisconsin−Madison [2].
In this application note, we will focus on the technicaldetails of the onsemi 1200 V SiC MOSFET modules thatcan be employed to implement the OBC power stages thatare described in detail in the above references.

according to ECPE Guideline AQG 324 [3]. This value
tends to be a little more conservative than the traditional
discrete MOSFET ID continuous rating, which is a purely
algebraic determination based on RDS(on) at TJ(max) and thethermal resistance value RqJC, as given in equation 1.
ID +Ǹ

T J(max) * T C

R DS(on)[Tj(max)] @ R qJC(eq. 1)In the associated data sheets, the user can refer toFigure 10 to see the maximum drain current as a function ofcase temperature, as given in equation 1. Because the data
sheet current rating information is only representative of thedata sheet conditions, it is recommended that the user
consider using circuit simulation that is specific to his/her
system design to evaluate more closely the thermal and loss
performance of the modules in their specific application.
Package Thermal Performance

onsemi utilizes computational fluid dynamics software to
analyze the thermal response of the module and heatsink
assembly under various boundary conditions, and validates
the results through testing. Figure 5 shows the concept foranalyzing the ZqJC and ZYJS thermal impedance
characteristics. For ZqJC, the module bottom surface ismaintained isothermal at 100C, while for the ZYJS
characteristic, the boundary conditions are as shown in
Figure 5, that is, specific TIM thickness and conductivity,
aluminum heatsink, and isothermal surface. The thermal
characteristics provided in the module data sheets reflect theresults of this combined, validated test and analysis process.

Figure 5. Thermal System Concept and Example
Results

Current and Voltage Ratings

Drain−source breakdown voltage rating for all the subject
SiC MOSFET modules is BVDSS = 1200 V, guaranteeing aminimum breakdown of 1200 V across the operating
junction temperature range −40°C to 175°C.
Gate−source voltage has a maximum safe range of+25 V/−15 V, while the recommended operating voltage
range is +20 V for turn on and −5 V for turn off. These values
are consistent across all three part numbers.
Current ratings as provided in the data sheet maximum
ratings tables reflect the qualification of these modules

For the 5−pin bare die models of the MOSFETs, thermal
performance can be observed in simulation by employing a
Cauer thermal network connected to the TC terminal on one
end, and a reference power supply set to the system variable{temp} to represent the ambient or heatsink temperature.
The data sheet provides the Foster network RC values for thethermal equivalent circuit; Table 1 provides the Cauer
network equivalent RC values.

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AND90017/D
junction−sink Cauer network thermal resistances (Rn) andthermal capacitances (Cn) are given in Table 2 for the
NVXK2xx80WDT and NVXK2TR40WXT modules. To
convert this Cauer network to a “de−normalized” network
representing either the data sheet value for RYJS or acustomer−specified value, simply multiply the Rn−values
by the desired RYJS, and divide the Cn−values by the same
RYJS, as given in equation 2. The resulting RC values willproduce a transient thermal impedance curve with the proper
time constants and the desired steady state value, RYJS.

As an example, the circuit in Figure 6 is used in SIMetrix
to simulate the 80 mW bare die with a simple excitation tocause heating, and the above−referenced Cauer network for
the NVXK2TR40WXT module. This is shown withconstant DC drain current near the thermal limit of the
package, with a gate voltage VGS = 20 V. This demonstrates
the connections to the Cauer network and verifies the data
sheet ID limit shown in Figure 10 of the data sheet, with acase temperature of 25C.
Table 1. CAUER NETWORK FOR THERMALIMPEDANCE, ZqJC
NVXK2xx80WDT

R i + R qJS @ Rn

R, W

C, F

R, W

C, F

1 (TC)

0.01924.539e−4

0.012

7.943e−420.11485.580e−40.05288.656e−430.40695.30e−30.25167.23e−34

1.254433.4e−30.131

0.2026

5

0.04104.819

5.733e−331.5396 (TREF)

0.003427.0153.599e−3

140.487

RqJC

1.84C/W~

0.47C/W~

Cn i(eq. 2)

R qJS

To properly connect the de−normalized ZYJS network to
the SiC MOSFET model, simply replace the values of theladder network shown in Figure 6 for the ZqJC characteristicwith the values computed using equation 2 and the system
will produce the thermal response according to ZYJS.

NVXK2TR40WXT

Node #Ci +The temperature response results shown in Figure 7 show
DC current values of 65, 66, 67, 68, and 69 amps. The
voltage response represents temperature of the junction inC. This can be compared directly to Figure 10 of the data
sheet for NVXK2TR40WXT to see that the limit of 68 A isconsistent with the simulation.

Figure 7. Temperature Response to Range of DC
Current
Table 2. CAUER NETWORK FOR NORMALIZEDTHERMAL IMPEDANCE, ZYJSNVXK2xx80WDT

Figure 6. Example Cauer Network with 40 mW Die

Should a user have a thermal stack similar to that shownin Figure 5 for the junction−sink, the “normalized”

Node #

R, W

C, F

R, W

C, F

1 (TC)

2.265e−31.379e−32.332e−31.988e−325.765e−21.739e−3

4.073e−22.458e−330.21091.022e−21.579e−21.579e−240.49599.365e−25.325e−18.723e−250.22222.347

2.762e−1

1.889

6 (TREF)9.903e−3228.5

1.221e−2

182.9

RYJS

1.0C/W~

1.0C/W~

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NVXK2TR40WXTAND90017/D
The Cauer network RC values of Table 2 correspond to thetwo normalized transient thermal impedance curves shownin Figure 8. Note that the normalization process forces thesecurves to have steady state values of 1.0C/W. When the“de−normalization” is carried out according to equation 2,
the user will achieve the desired steady state value (forexample, from the data sheet, 0.95C/W for RYJS for
NVXK2TR40WXT) and the correct dynamic behavior.
The modules include an NTC thermistor, TDK partnumber B57342V5103H060 [7], which has the resistancevs. temperature characteristic shown in Figure 9.
Temperature can be computed, in degrees Celsius, from theresistance value based on the equation 3.

Figure 9. NTC R−T Characteristic and Temperature
Computed from R with B = 3950
Simulation for Module & System Performance

Users of these devices have available to them via
www.onsemi.com simulation models of the SiC MOSFET
bare die that are used in the modules. These SIMetrix,
pSpice, and LTSpice models can be combined withequivalent circuit models for the package to produce a very
accurate simulation of the circuit behavior. This allows
designers to assess the performance of the modules in a very
realistic manner when combined with their gate drive
circuits and any other related circuitry constituting the full
OBC system.
Table 3 provides a cross reference to the die models thatshould be downloaded from www.onsemi.com to populate
the module models. Figures 10 and 11 show the equivalent
series inductance and resistance values for each path in themodule between external pins and die terminals, for the dual
half bridge modules and the VIENNA module, respectively.
These equivalent package models are derived from a Spicemodel generated from the ANSYS Q3D [4] representation of
the full 3D geometry and material properties of the modules.
Figure 10 represents a simplified, lumped distributed
parameter model of the dual half bridge modules,
NVXK2TR80WDT and NVXK2TR40DXT. The MOSFET
shown in Figure 10 is the bare die model for the 80 mW
1200 V SiC MOSFET populating the four die locations in
the module.

Figure 8. Normalized Transient Thermal
Impedance ZYJSNTC resistance may be measured by employing a voltage
divider with an external voltage source and external resistor.
T(R) +

T0 @ BT 0 @ lnR
)B
R0

(eq. 3)

Where T0 = 298, B is taken from the data sheet [7](typically 3650), R0 = 10 kW, and R is the measured
temperature−dependent resistance. In these modules, T(R)can be taken equal to the case temperature, and the Cauer
network in Table 1 can be used to estimate junction
temperature in real time.

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5AND90017/D
from www.onsemi.com can be populated as 5−pin models to
include the TJ and TC terminals. This will allow thesimulation to be a coupled electro−thermal simulation andprovide the highest level of accuracy for assessment of theelectrical and thermal performance of the system.

Table 3. MODULE DIE MODEL CORRESPONDENCE
Module Part Number

MOSFET/DIODE Model

NVXK2TR80WDT

NVC080N120SC1

NVXK2TR40WXT

NVC040N120SC1

NVXK2KR80WDT

NVC080N120SC1
FFSH20120A−F085*
VS207DM..CCB**Detailed model not available.

Note in Figure 10 that a high value parallel resistor can be
added to each series inductance to aid in convergence if sucha problem should arise. These parasitic R and L values canbe taken to be the same for both the 40 mW
NXVK2TR40WXT and the 80 mW NVXK2TR80WDT.

Figure 11. Simplified Package Model for Vienna
ModuleAs an example of simulation using the combined SiC
MOSFET die, module electrical parasitics, and module
thermal impedance models, consider the NVXK2TR80WDT
model configured in the n−pulse test circuit shown in
Figure 12. Here, we have truncated the view of the schematic
to show only one half of the module, e.g., one of the twohalf−bridges, to enable a more readable picture. An external
800 V dc supply is used to provide current to the inductive
load through the half−bridge operation in the classic 2−pulse
arrangement. The NCV08N120SC1_5P bare die model with
TJ and TC terminals is used, and a separate Cauer network
representing the junction−to−case thermal impedance isincluded for each die.
Results for switching are shown in Figures 13 − 15, witha reference temperature of 25C. Figure 13 shows thetemperature profile during three sets of switching events(10 A, 20 A, and 30 A) and it is easy to see the effect of the
EOFF and EON during the switching events starting at 11, 23,
and 35 ms, as well as the high side switch (U2) body diodelosses during its off times of current recirculation.
Figure 14 shows a detail view of the 20 A turn off event
for Q2, the low side MOSFET, while Figure 15 shows thesubsequent 20 A turn on event. Dynamic variations in gate
and drain waveforms can be seen as they are affected bystray inductances.

Figure 10. Simplified Package Model for Dual Half
BridgeSimilarly, the Q3D model for the NVXK2KR80WDT
package has been exercised to determine a lumped
parameter parasitic model for the Vienna module, which isshown in Figure 11. The power devices and terminals arelabeled the same as in the schematic in the data sheet. Notethat all inductances are given in nH, and the resistance values(other than the NTC) are given in mW or mW. Note that thiscircuit is a simplification of the Q3D model, notably missing
any capacitive effects, and thus will not produce all the same
waveform dynamics as the real device or even the Q3Dmodel. If a full Q3D model is desired, please contact yourlocal onsemi sales office to enquire.
The reader can place these schematics within their Spiceor SIMetrix simulation for the entire OBC system, or they
can use these models combined with a representation of asimple test stand that could be constructed to test theperformance of the models. The MOSFET models obtainedwww.onsemi.com
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AND90017/D
9.8n

400u
P1

I(Q1−D)Tj
U1−Tj
11.2n

10.2m

P1

Tcase

TC1

G1
−5

TC2

TC1

V3

453.9u453.9uU1

R23

NVC080N120SC1_5P

1

R25
15p

C3

19.2m

19.2m

S1

470n

R35

9.85n

8.6m

C1

C7

558u

558u

R30

C8

C6

R36
114.8m114.8m
180u

5.3m

5.3m

N1

R29
1.125n
400u

C9

C4

R31
406.9m406.9m

9.8n

PH1

33.4m

33.4m

180u
R28
800u

C10

1.2544

ILoad_1

PH1

C14

R34
1.2544P1
4.819

1.125n

L19

20n

R27

P1

C11

41m

I(Q2−D)Tj

L21

4.819

C13

R32
41m

U2−Tj
4.7

11.2n

10.4m

27.01527.015

Tcase

G2
TC2
V2

C12

C5

R33
3.4m

NVC080N120SC1_5P

800
V1

R26
3.4m

U2

5 Pulse(−5 20 1u 10n 10n 10u 12u)

15p
8.5m

9.8n

810u

11.4n

{temp}{temp}V7V8

S2
VDS_Q2

N1

N1

Figure 12. n−Pulse Circuit − Half of NVXK2TR80WXT
Module Electrical Isolation and Mounting Guide

Figure 13. Temperature Response of Q1 & Q2

Creepage and ClearanceElectrical isolation is closely related to the safety andreliability of the module in an application. IEC60664−1 [5]is the generally accepted guideline for determining
minimum safe values for creepage and clearance distances
under varying material classes, pollution degrees,
elevations, and working voltages, to insure proper electricalisolation. The distance along a continuous insulating surface
between two conductive materials is defined as creepage,and clearance is the linear distance through air between two
surfaces at different potentials. The basis for thedetermination of a creepage distance is the rms value of theworking voltage between the two conductive parts.
Refer to Tables F.2, F.4, and A.2 in [5] to determine theclearance for transient over voltages, the creepage distanceto avoid tracking failure, and the altitude correction factors
for clearances.

Figure 14. 20 A Q2 Turn Off Waveforms

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7AND90017/D
from the shoulder of the pins to the top surface of the EMC,
which is as close as any heatsink surface might come. Thisis illustrated with the solid blue arrow. In a practical heatsink
design with a shoulder as shown in Figure 16 to achieve
higher creepage, greater than 3.3 mm clearance is possible,
as shown with the dashed blue arrow.

Figure 17. Illustration of Achievable Clearance

Mounting Guide
In general, two methods of mounting the module into theuser’s system are illustrated in Figure 18. Simply put, themodule can be mounted first to the heatsink and then to the
PCB, or first to the PCB and then to the heatsink. It is
recommended to follow Method 1, mounting to the PCB first
and then to the heatsink, to allow the use of standard soldering
processes and avoid selective soldering operations.
When mounting the module to a heatsink, users should
follow the recommendations in Table 4 to avoid mechanicaldamage to the module, especially due to applying excessive
torque to the mounting screw. With the specified torqueapplication, the size of the drilled holes in the heatsinkshould be exactly matched to the specification for the screw,
and the surface of the heatsink should be smoothed byremoving burrs and protrusions to satisfy the flatness androughness requirement. The definition of flatness androughness on heatsink surface are illustrated in Figure 19.
Table 4 shows the guideline for the mounting torque(assuming a SEMS−type M3 screw with washer), flatness ofthe surface of the heatsink and the DBC surface, and theroughness of the heatsink surface.

Figure 15. 20 A Q2 Turn On Waveforms

To select the proper entries in these tables, we define theworking voltage as 1000 V, the transient overvoltage as2500 V, the material group I (epoxy mold compound withcomparative tracking index CTI > 600), and pollution
degree 2, using the Case A (inhomogeneous field). These
conditions yield the following parameters from
IEC60664−1:
 Minimum Creepage Distance (F.4) = 5.0 mm
 Minimum Clearance (2000m ASL, F.2) = 1.5 mm
 Altitude Correction Factor (5000m ASL, A.2) = 1.48
 Total Clearance Required = 1.5 mm x 1.48 = 2.22 mm
The OBC modules have been designed to achievesufficient creepage, as illustrated in Figure 16. Observing
the red colored surface of the epoxy mold compound(EMC), we can see that a minimum of 12.1 mm of creepage
can be achieved, allowing for variation in production
placement of the heatsink, indicated by the blue arrow.

Table 4. MOUNTING TORQUE AND FLATNESSGUIDELINE
Limits
Item

Min

Typ

Max

Units

Mounting Torque (M3)

0.6

0.65

0.8

Nm

DBC Flatness

0

40

120

mm

Heatsink Flatness

−100

−

50

mm

Heatsink Roughness

0

−

10

mm

Figure 16. Illustration of Achievable Creepage

Figure 17 illustrates the clearance inherent to the designof the module. A minimum clearance of 3.3 mm is givenwww.onsemi.com
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AND90017/D
increasing the effective surface area for heat transfer. Since
the contact surfaces are not perfectly flat, multiple air gaps
can form between two solid contact surfaces. Air is a poor
heat conductor preventing the heat transfer and limiting theeffective contact area. Thermal Interface Materials (TIMs)
need to be applied between the heat sink and the surface ofthe module to fill any air gaps and to achieve a low thermal
resistance. The following are the general considerations
when choosing TIM for the application. Besides its thermal
conductivity, handling and rework performance are also
important factors while selecting the proper TIM.
 High thermal conductivity
 Ease of distribution with low contact pressure
 Minimal thickness
 Degradation of characteristics over time Environmental impact
 Ease of handling during application or removal
Although many thermal interface materials with various
properties are available nowadays, still the most commonlyused in the industry is thermal grease. Thermal greases
consist of silicone or hydrocarbon oils that contain various
fillers which have good surface wetting characteristics andflow easily to fill void even at low mounting pressure.
Standard thermal compounds have a thermal conductivity
between 2.0 − 4.0 W/m−K, while the thermal conductivityof high−end compounds is in the range of 5.0 to 9.0 W/m−K
or even higher. As an alternative, high thermal conductivity
graphite sheets provide improved reliability and highthermal performances as well as lower overall costs due toa simplified assembly process. However, the thermal
resistance depends on the thickness of the graphite sheet andthe thickness and thermal conductivity should be reviewed
before the selection. One representative TIM is Electrolube
HTCP (Heat Transfer Compound Plus) thermal grease [6].
HTCP is a non−curing, non−silicone heat transfer paste
suitable for the application where silicones are prohibited,thus avoiding issues with silicone and low molecular weightsiloxane migration. It is RoHS−2 compliant. Table 5 shows
the physical properties of HTCP.

The module mounting sequence is described as below andillustrated in Figure 19.
 Apply thermal interface material (TIM) Pre−screw side A ~30% torque Pre−screw side B ~30% torque Final screw side B (full torque) Final screw side A (full torque)

Figure 18. Mounting Methods

Figure 19. Flatness (a) and Roughness (b) of theHeatsink

Thermal Interface Material (TIM) Application
TIM is applied between the heatsink and the module toreduce the contact thermal resistance. User should makesure that the TIM is applied thinly and evenly based on the
TIM datasheet including the thickness [m] and thermal
conductivity, [W/mK]. Only a small amount of compoundis required to fill the gap space between the metal contact

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Table 5. PHYSICAL PROPERTIES OF ELECTROLUBE
HTCP
Category

References[1] Thandapani Thangavelu, Paramasivam Shanmugam,
Karpagam Raj, “Modelling and control of VIENNA
rectifier a single phase approach.” IET PowerElectronics, 2015, Vol. 8, Iss. 12, pp. 2471−2482.
[2] Zhu, Yutong, “Vienna Rectifier with Gallium Nitride(GaN) Devices,” MS−ECE Thesis, University of
Wisconsin−Madison, 2016.
[3] ECPE Guideline AQG 324, “Qualification of Power
Modules for Use in Power Electronics Converter Units in
Motor Vehicles,” European Center for Power Electronics
e.V.
[4] Ansys Q3D Extractor Multiphysics Parasitic Extraction
and Analysis Software,
https://www.ansys.com/products/electronics/ansys−q3d−extractor[5] IEC60664−1, “Insulation coordination for equipment
within low−voltage systems − Part 1: Principles,
requirements, and tests.” 2nd Edition, 2004.
[6] HTCP Technical Bulletin, Issue: 11 January 2022.
www.electrolube.com[7] TDK Electronics, AG, “NTC thermistors for temperature
measurement,” Data Sheet B573**V5, 2019.

Results

Typical Properties
Color

While

Base

Blend of synthetic fluids

Thermo−conductive Component

Powered metal oxides

Density @ 20C (g/mL)

3.0

Cone Penetration @ 20C

250

Viscosity @ 1 rpm (Pas)

101 to 112

Thermal Conductivity(Guarded Hot Plate) (W/m.K)

2.5

Thermal Conductivity (Heat Flow)(W/m.K)

1.7 (calculated)

Temperature Range (C)

−50 to 130

Permittivity @ 1 GHz

4.2

Volume Resistivity (W·cm)

1 x 1014

Dielectric Strength (kV/mm)

42

Weight Loss after 96 Hours @ 100C<1.0%

Flammability

UL94 V−0 equivalent

onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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