Victory Atomistic
Nanostructure Material and Quantum Device Simulator
Overview

Below ten nanometers, designing the most advanced technological architectures requires simulations at the atomic scale.
Victory Atomistic, Silvaco-licensed technology created by Professor Kubis’s team at Purdue University, which is licensed
through the Purdue Research Foundation, offers an atomistic simulation solution for next-generation semiconductor
devices and materials.
Thanks to Victory Atomistic’s combination of non-equilibrium Green’s functions (NEGF) and state-of-the-art band structure
calculations, versatile, predictive, and fast simulations become easy to perform, even without full academic knowledge of
the NEGF theory; the complexity is hidden inside the simulation tool, which benefits from years of development at thehighest level.
Nanotechnology products exhibit advanced quantum physical effects. The engineering of nanoelectronics aims to optimize
a myriad of constraints in these domains: non-uniformities, strains, confinements, tunnel effects, and thermal, optical, andmagnetic responses. Victory Atomistic addresses these constraints in its comprehensive analysis.
Victory Atomistic optimal solution allows users to obtain a meaningful I(V) curve daily on a conventional computer. Its
integration within the Silvaco environment provides an atomistic set-up and visualization framework, allowing a smoothtransition toward emerging materials and technologies for TCAD users.

Key Features• Device simulator functional at atomic resolution for
2D and 3D materials• Integrated into Silvaco’s TCAD DeckBuild environment• Advanced visualization with companion tool
VictoryVisual• Multiple physics solvers
o Self-consistent Poisson-Schrödinger
o Force-field relaxation, strain-dependent calculationo Quantum Transmission Boundary Method (QTBM)
o Non-Equilibrium Green’s Function (NEGF)
o Electron-phonon and phonon-phonon self-energies
o Mode-space and low-rank approximationcompatible with scattering		o Büttiker-probes method• Electronic structure calculations: band-structure,density of states, transmission probability• Atomic prediction of potentials, charges, mobilities,
and band edge shifts that can serve as input totraditional TCAD
• Device simulation of MOSFET, TFET, and LED, thanks todevice templates and meta-solvers• I(V) characteristics, density of states, and current
density resolved in space and energy• Amazon cloud-ready, parallel MPI/OpenMP runs inbatch mode.

Nanoelectronics

Victory Atomistic can solve for various architectures withatomic resolution thanks to an ingenious device builder
fed by a material database containing an advanced setof tight-binding parameters that the user can also enrichwith forefront ab initio results.
The Victory Atomistic goes far beyond ballistic approximations
to treat essential coherent and incoherent scattering
mechanisms, thanks to NEGF. At the heart of thesimulator, the computational burden of self-energies isdrastically reduced, thanks to low-rank approximation
techniques that preserve numerical accuracy.

Victory Atomistic Flowchart of Atomistic Solvers

A silicon nanowire FET with 20 orbitals per atom and 8000
atoms with modespace and electron-phonon scattering:visualization of the NEGF results with Victory Visual
Top: NWFET structure with spacers
Middle: Density of States resolved in space and energy for
different grid voltages
Bottom: Free charges in the NWFET

Dual-gate TFET with one monolayer of MoS2 –Top: device structure with insulator (green), Mo (blue)
and S (yellow) atoms
Middle: Band Structure of the Wannier Hamiltonian
Bottom: TFET 1D band profile function of the gate voltage
appliedFinFET Q(V) calculation using Poisson-Schrödinger atomistic solver
Left: FinFET structure – followed by the charge with increasing gate voltage

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