Equipment & price list, Hands-on-access fab., Micro System Integration Center, Tohoku University
Facility (CR, office) usage fee per person : TU user : 860 JPY/h, Others : 670 JPY/h
Technical assistant fee : 5,565 JPY/h (Nanotechnology Platform User : 3,150 JPY/h)
As of April, 2018

Photolithography

Cleaning, drying

No.

Equipment name

A-1

Draft chamber

A-2

Draft chamber for SiN etching

A-4

Inert oven for sintering

A-5

Manufacture/type
As one PSH1200

705 Max 6"

Cleaning by acids, wet etching (Si, SiO2, metal, etc.）
SiN wet etching

Yamato DN63H

740 Max 6"

Al sintering in N2

Vacuum oven

Yamato DP-31

649 Max 6"

Annealing in vacuum

A-6

Brush scrubberZenkyo

3,922 Max 6"

A-7

Spin dryer

Toho Kasei ZAA-4

1,603 Max 6"

A-8

Draft Chamber for organic

A-94" Spin dryer

SEMITOOL PSC101

1,338 4"

cassette typeA-10

6" Spin dryer

SEMITOOL PSC101

1,338 6"

cassette type

B-1

Pattern generator

NSK TZ-310

1,524 Max 6"

Emulsion mask, Cr mask, minimum resolution: 1µm

B-2

Spin coater

Mikasa 1H-DXII

1,475 Max 4"

B-3

Clean ovenYamato DE62

1,861 Max 6"

Wafer bake

B-4

Curing oven

Yamato DN43H

1,247 Max 6"

Polyimide curing in N2

B-5

Double-side aligner

Suss MA6/BA62,369 Max 6"

Contact exposure, single/double side alignment, alignment for bonding

B-6

Single-side aligner

Canon PLA-501-FA

1,566 4"

Contact exposure, cassette type

B-7

Raith EB lithography

Raith 50

3,015 Max 3"

Max. 30keV, minimum resolution: 30nm

B-8

Draft chamber for development

B-9

UV curingUshio UMA-802

2,585 4"

B-10

Spin coater

Actes ASC-4000

1,629 Max 6"

B-11

Spray developer

Actes ADE-3000S

1,379 Max 6"

Spray of developer and DI water

B-13

Elionix EB lithography

Elionix ELS-F125

6,869 Max 6"

Max. 130keV, minimum resolution: 4nm

B-14

Laser writer

Heidelberg Instruments
DWL2000CE

6,570 Max 9"

Wafer cleaning after polishing

705 Max 6"

705 Max 6"

Maskless exposure system forToei Scientific Industrialball
B-16 Spin dryer
Toho Kasei ZAA-4

Oxidation, diffusion, ion implantation,annealing

Note

Wafer size

1,029 Max 6"

B-15

CVD, sputtering, evaporation

Fee(JPY/h)

3,750 Ballcassette type

405nm, min.L/S 0.7µm, photo mask making (Cr and emulsion), direct
writing, gray scale lithography
Maskless lithography on ball (diameter:1.0,3.3mm), resolution:1.5μm
half pitch, alignment precision: 5μm

1,603 Max 6"

B-17

Hot plate

Shamal HHP-230SQ

C-1

Oxidation (semiconductor)

TEL XL-7

8,851 Max 6"

C-2

Oxidation (MEMS)TEL XL-7

7,447 Max 6"

C-3

P diffusion

TEL XL-7

9,919 Max 6"C-4

P drive-in

TEL XL-7

8,243 Max 6"

C-5

B diffusion

TEL XL-7

8,955 Max 6"C-6

B drive-in

TEL XL-7

8,243 Max 6"

C-7

Annealing

TEL XL-7

8,225 Max 6"

C-8

Middle-current ion implanter

Nissin ion NH-20SR

17,214 4"Max. 180keV, 0.6mA, P, B, cassette type

C-9

High-current ion implanter

Sumitomo eaton nova NV-10

17,410 4"

Max. 80keV, 6mA

C-10

Rapid thermal annealing

AG Associates AG4100

6,694 Max 6"

Max: 1100 degree, 100 degree/sec, cassette type

C-11

Metal diffusion furnace

Koyo Model270

8,027 max 4"

Max: 1000 degree

D-1

LPCVD (SiN)

System service

8,848 Max 6"

SiN

D-2

LPCVD (Poly-Si)

System service10,005 Max 6"

Poly-SiD-3

LPCVD (SiO2)

System service

10,971 Max 6"

SiO2(NSG), SiON

D-4

Thermal CVD

System service

16,973 Max 6"

Epipoly-Si, Poly-Si(non-doped, doped), Max. 1100 degree

D-5

Sumitomo PECVD

Sumitomo MPX-CVD

13,685 Max 8"

SiN, SiO2, Max. 350 degree, low-stress SiN

D-6

W-CVD

Applied Materials P-5000

8,401 4"Tungsten CVD

D-7

Anelva sputtering

Anelva SPF-730

6,158 Max 6"

4" x 9 wafers, 8" x 3 targets

D-8

Shibaura sputtering

Shibaura CFS-4ESII

3,045 Max 8"

Wafer stage : 200mm, 3" x 3 targets

D-9

EB evaporation

Anelva EVC-1501

4,599 4", 6"

D-10

Automatic sol-gel deposition

Technofine PZ-604

6,361 Max 4"

PZT deposition

D-11

Electroplating

Yamamoto

2,085 Max 6"

Cu, Ni, Sn, Au

D-12

MOCVD

Wacom

18,461 Max 8"

PZT deposition

D-13

JPEL PECVDJPEL VDS-5600

13,808 4"

SiN, SiO2

D-14

Sumitomo TEOS PECVD

Sumitomo MPX-CVD

15,323 Max 8"

TEOS SiO2, SiN, Max. 350 degree, low-stress SiN

D-15

Automatic Shibaura sputtering

Shibaura!-Miller CFS-4EP-LL

5,505 Max. 8"

Wafer stage : 220mm, 3" x 4 targets, Max. 300 degree, with LL chamber
and automatic transfer system up to 10 wafer stages

D-16

Sputtering for ball

Izumi-tech

3,530 Ball

Sputtering on ball (diameter:1.0,3.3mm), Au, Cr, Al, Pd, SiO2, etc. O2
plasma cleaning

8,988 Max 6"

Al2O3 etc.

Technofine ALK-600
ALD
High-temp. sputtering and O2
D-18
Youtec 21-0604
annealing
D-17

D-19

Anelva multi-sputtering

Anelva SPC-350

578 Max 8"

10,561 Max 8"
6,578 4"40-400 degree, Accuracy: 1 degree

Pre-deposition

Pre-deposition

Annealing after ion implantation

Max. 700 degree in Metal sputtering chamber (DC) and Oxides sputteringchamber (RF). High-pressure O2 annealing chamber
4" x 6 wafers, Max. 600 degree, 6" x 3 turgets (DC x 2, RF x 1,simultaneous), with LL chamber, ferromagnetic material possible

Etching
Bonding, polishing, packaging

E-1

DeepRIE #1

Sumitomo MUC-21

7,390 Max 6"

Si deep RIE, mechanical cramp

E-2

DeepRIE #2

Sumitomo MUC-21

7,390 Max 6"

Si deep RIE, mechanical cramp

E-3

DeepRIE #3

STS7,674 Max 6"

Si deep RIE, mechanical cramp

E-4

Anelva RIE

Anelva DEA-506

6,082 Max 6"

SiN, SiO2, gas: CF4, CHF3

E-5

Anelva Si RIE

Anelva L-507DL

5,841 Max 6"

Si, gas: SF6

E-6

Al-RIE

Shibaura HIRRIE-100

9,415 Max 6"

Al, Si, gas: Cl2, BCl3, cassette typeE-7

Ulvac asher

Ulvac UNA-2000

3,206 4"

2.45GHz, cassette type

E-8

Branson Asher

Branson IPC4000

2,558 Max 6"

13.56MHz

E-9

ECR etcher

Anelva ECR6001

15,732 Max 3"

gas: Cl2

E-10

Ulvac RIE

Ulvac RIH-1515Z

8,230 Max 6"

Metals etc., gas: Cl2, BCl3, SF6, CF4, CHF3, Ar, N2, O2

E-11

KOH etching

2,638 Max 6"

Si anisotropic etching

E-12

TMAH etching

2,646 Max 6"

Si anisotropic etching

E-13

DeepRIE #4

Sumitomo MUC-21

13,709 Max 8"

Si deep RIE, electrostatic cramp

E-14

Ion milling

NS/Hakuto 20IBE-C

10,675 Max. 6"

Ar ion, 4" x 6, 6" x 3

E-15

Vapor HF etching

Sumitomo Primaxx uEtch

6,957 Max 8"

SiO2 sacrificial etchingE-16

Ulvac ICP-RIE

Ulvac NE-550

13,655 Max. 6"

E-17

Chemical Dry Etcher (CDE)

Shibaura CDE75,442 Max 4"

low-damage Si isotropic etching by radicals, removal of DRIE's scallops,
gas: CF4, O2, N2

E-18

Plasma cleaner

Yamato PDC210

2,717 Max. 6"

Ar, O2 plasma for wafer cleaning and resist ashing

F-1

Wafer bonder

Suss SB6e4,546 Max 6"

Anodic bonding, metal bonding, polymer bonding

F-2

Accretech dicer

Accretech

8,841 Max 6"

Cutting water: DI waterF-3

Disco dicer

Disco DAD-522

1,888 Max 6"

Cutting water: Tap water

F-4

Wire bonderWest Bond

F-5

Laser marker

GSI WM-II

1,969 4"Wafer marking

F-66" wafer polisher

BN technology Bni62

1,679 Max 6"

Polishing and CMP for Si, SiO2, metal

F-74" wafer polisher

BN technology Bni52

1,394 Max 4"

Polishing and CMP for Si, SiO2, metal

F-8

Sand bluster

Shinto2,734 Max 6"

Grass drilling

F-9

EVG wafer bonder

EVG 520

4,678 8"

Thermal compression boding

F-10

EVG aligner for wafer bonding EVG Smart View Aligner

3,915 8"IR alignment

F-11

UV imprint

Toshiba machine ST-50

5,112 Max 4"

UV imprint, step & repeat available

F-12

Thermal imprint

Origin Reprina-T50A

4,750 Max 2"

Max. 650 degree, Max. 30kN

F-13

Excimer lamp cleaner

Dernaechste EXC-1201-DN

1,077 Max 4"Organic contamination remover

F-14

Surface planer

Disco DAS8920

F-15

Water laser

Shibuya LAMICS AQL-1900

5,087 Max 12"

G-1

Wafer dust counter

Topcon WM-3

1,323 Max 6"

G-2

Film thickness measurement

Nanometric NanoSpec3000

G-3

Dektak surface profiler

Dektak 8

1,237 Max 6"

G-4

Tenchor profiler

Tencor AlphaStep 500

1,237 Max 6"

G-5

Depth measurement

Union Hisomet

G-6

Solid State Measurements
SSM1502,180 Chip

G-84-terminal prober
Spreading resistancemeasurement
Wafer prober

Accretech EM-20A

2,217 4"G-9

Microscope

Nikon L150

G-10

Digital microscope

Keyence/Kunoh

1,168 Max 8"

x20-200, x500-5000

G-11

SEM

Hitachi S3700N

2,208 Max 12"

EDX, high/low vacuum, optical navigation

G-12

FE-SEM

Hitachi S5000

3,678 Chip

High-resolution SEM

G-13

Micro X-ray CT

Comscan techno ScanXmate
D160TS110

2,620 Max 6"

Non-destructive

G-14

Ellipsometer

Ulvac

G-15

Ultrasonic microscope

Insight IS-350

1,810 Max 12"

G-16

Digital thermal microscope

Apiste FSV-1200833 Max 6"

Thermal imager, minimum resolution: 10µm

Olympus/Hamamatsu

818 Max 6"

Double-side alignment check, void detection

Canon anelva
M-101QA-TDM

813

Residual gas monitoring

Measurement

G-7

Infrared microscope
Quadrupole mass
G-18
spectrometer
G-19 TOF-SIMS
G-17

CAMECA TOF SIMS IV

776 Chip

11,842 4", 8"

SiO2 etc., gas: CF4, CHF3, SF6, Ar, O2, N2, (Cl2, BCl3)

Al, AuAu or Cu bump precise planarization
Si wafer, metal sheet, min. cutting width: 70µm

960 Max 6"

666 Max 6"

Optical non-contact measurement667 Max 6"

Wafer resistivity measurement
Dopant profile measurement741 Max 6"563 Max 6"

Film thickness and refractive index
Non-destructive, void detection at bonding interface

14,247

G-20

Quick coater

Sanyu SC-701MkII

933 Max 2"

Pt coating before SEM

G-22

Desktop Ellipsometer

Photonic lattice SE-101

344 Max 6"

High-speed and compact ellipsometer

G-23

Large wafer size AFM

Digital Instruments
Dimension3100

3,592 Max 12"

Surface measurement of large diameter wafer

Lasertec
OPTELICS HYBRID LS-SD

4,491 Max 6"

3D surface measurement, laser/white light, conforcal/non-conforcal

3,823 Max 6"

Measurement of leaky SAW (LSAW) velocity of solid sample

3,823 Max 8"

Measurement of acoustic velocity of bulk wave of solid sample

SII SMI9200

8,773 Chip

Focus ion beam etching

Bruker AXS D8 DISCOVER

6,822 Max 6"

High temp available

Laser/white light confocal
microscope
Line-focus-beam acoustic
G-25
microscope #1
Line-focus-beam acoustic
G-26
microscope #2
G-27 FIB
G-24

G-28

XRD