SMD Power MOSFETTransistor (N-Channel)
BSS138SMD Power MOSFET Transistor (N-Channel)
Features• Low On-Resistance:3.5Ω• Low input capacitance:40pF• Low output capacitance:12pF• Low threshole:1.5V• Fast switching speed:20nS• RoHS Compliance

SOT-23

Application• DC to DC converter• Cellular & PCMCIA card
• Cordless telephone• Power management in portable and battery etc.

Mechanical Data
SOT-23, Plastic Package

Case:
Terminals:

Solderable per MIL-STD-202G, Method 208

Weight:0.008 gram

Maximum Ratings (T Ambient=25ºC unless noted otherwise)
SymbolDescription

BSS138Unit

Marking CodeJ1VDSS

Drain-Source Voltage

50VVGS

Gate-Source Voltage± 20VID

Drain Current Continuous

200mA

IDM

Drain Current Pulsed (tp≤10µS)

800mAPD

Drain Power Dissipation

225mW

Thermal Resistance, Junction to Ambient

556° C/W-55 to +150

°C

RthJA
TJ,
TSTG

Storage Temperature Range

Conditions

TA=25° C

TA=25° C

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com

Rev. A/AH

Tel: (800)-TAITRON
Fax: (800)-TAITFAX

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SMD Power MOSFET Transistor (N-Channel)
BSS138
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
SymbolDescription

Min.

Typ.

Max.

Unit

Conditions

V(BR)DSS

Drain-Source Breakdown Voltage

50--V

VGS=0V, ID=250µA

VGS(th)Gate-Source Threshold Voltage

0.5

-

1.5

V

VDS=VGS, ID=1mA

IGSS

Gate-Source Leakage Current--± 0.1

μA

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

--0.1

μA

VDS=25V, VGS=0V

IDSS--0.5μA

VDS=50V, VGS=0V-5.610ΩVGS=2.75V, ID<200mA,
TA=-40 to +85 ° C--3.5ΩVGS=5.0V, ID=200mA

100--mS

VDS=25V, ID=200mA,
f=1.0KHz

UnitConditions

pF

VDS=25V, VGS=0V,
f=1MHznS

VDD=30V, ID=200mA

RDS(ON)

Drain-Source On-ResistancegFS

Forward Transconductance

Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
SymbolDescription

Min.

Typ.

Max.

Ciss

Input Capacitance

-4050

Crss

Reverse Transfer Capacitance

-3.5

5.0

Coss

Output Capacitance-1225ton

Switching Time Turn-On Time--20

toff

Switching Time Turn-Off Time--20

Note: (1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%(2) Switching Time is Essentially Independent of Operating Temperature.

Rev. A/AH
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SMD Power MOSFET Transistor (N-Channel)
BSS138Switching Time Test Circuit

Typical Characteristics Curves

Fig.2- Transfer Characteristics

Drain Current ID (A)Drain Current ID (A)Fig.1- On-Region Characteristics

Drain-Source Voltage VDS (V)Gate-Source Voltage VGS (V)Rev. A/AH
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SMD Power MOSFET Transistor (N-Channel)
BSS138Fig.4- Threshold Voltage Variation with Temperature

Variance Vgs(th) (V)Drain Source On-Resistance RDS(ON)(Normalized)

Fig.3- On-Resistance Variation with Temperature

Junction Temperature TJ (° C)

Junction Temperature TJ (° C)

Fig.6- IDSS

Drain Source Leakage IDSS (A)Gate-Source Voltage VGS (V)Fig.5- Gate Charge

Total Gate Charge QT (pC)

Drain-Source Voltage VDS (V)Rev. A/AH
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SMD Power MOSFET Transistor (N-Channel)

Drain Current ID (A)Drain Source On-Resistance RDS(ON) (OHMS)

Fig.9- On-Resistance vs. Drain Current

Drain Current ID (A)Drain Source On-Resistance RDS(ON) (OHMS)

Drain Source On-Resistance RDS(ON) (OHMS)

Fig.7- On-Resistance vs. Drain Current

Drain Source On-Resistance RDS(ON) (OHMS)

BSS138
Fig.8- On-Resistance vs. Drain Current

Drain Current ID (A)Fig.10- On-Resistance vs. Drain Current

Drain Current ID (A)Rev. A/AH
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SMD Power MOSFET Transistor (N-Channel)
BSS138

Fig.12- Capacitance

Diode Current ID (A)Fig.11- Body Diode Forward Voltage

Diode Forward Voltage VsD (V)Marking Information:Rev. A/AH
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SMD Power MOSFET Transistor (N-Channel)
BSS138Dimensions in mm

SOT-23

How to contact us:

1. Gate2. Source
3. Drain

US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com

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Tel: +55-11-5574-7949
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TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICEMETROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
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Rev. A/AH
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