2012 International Symposium on Dry Process

ProgramThursday, November 15, 2012 
Opening Remarks (9:30–9:40)

H. Kokura (Fujitsu Semiconductor Ltd.)

Best/Young Award Ceremony (9:40–9:50)

Presenter: M. Izawa (Hitachi High-technologies Corp.)

Nishizawa Award Lectures

9:50–10:50



Chairperson: T. Ichiki (Univ. of Tokyo)
H. H. Sawin (Massachusetts Institute of Technology)
R. A. Gottscho (Lam Research Corp.)

9:50–10:20
10:20–10:50

Break (10:50–11:10)

Session A Surface Reaction (11:10–12:30)
Chairpersons: K. Nojiri (Lam Research Corp.), K. Karahashi (Osaka Univ.)[A-1]
Roughness formation mechanisms involved in HBr cure
11:10–11:30
		
M. Brihoum, R. Ramos, G. Cunge, K. Menguelti, E. Pargon, O. Joubert (LTM-CNRS) .......... 3[A-2]

High selective plasma etching for PMMA of block-copolymer in
11:30–11:50
Directed-Self Assembly
B. T. Chan1, S. Tahara2, J. F. de Marneffe1, R. Gronheid1, K. Xu1, E. Nishimura2, W. Boullart1		(1IMEC, 2Tokyo Electron Miyagi Ltd.) .......... 5[A-3]

Modeling and Simulation of Nanoscale Surface Roughness during
11:50–12:10
Plasma Etching of Si: Mechanism and Reduction		
H. Tsuda, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) .......... 7[A-4]

In-Situ Scanning Tunneling Microscopy of Shadowing Effects of Angled
12:10–12:30
Ion Implantation on Patterned Si Surface
F. Isono1,2, T. Kamioka1,2, Y. Kawamura1,2,
Y. Shikahama1,2, H. Yamashita1,2, K. Yamada1, K. Mura1, H. Kosugiyama1,
		
S. Hashimoto1, T. Watanabe1,2 (1Waseda Univ., 2JST-CREST) .......... 9
Lunch (12:30–13:30)

Session B <Arranged session>

Plasma Biological Treatment and Medicine (13:30–15:10)
Chairpersons: M. Shiratani (Kyushu Univ.), M. Nakatani (Panasonic Corp.)[B-1]<Invited> Non-Thermal Plasma at Atmosphere for Medicine and Hygiene
13:30–14:10
T. Shimizu1, G. Isbary2, J. L. Zimmermann1, S. Karrer3, W. Stolz2, G. E. Morfill1
		(1Max-Planck Inst., 2 Hospital Munich Schwabing, 3Univ. of Regensburg) ........ 13[B-2]<Invited> Introduction of Low Temperature and Reactive Plasmas to Minimally
14:10–14:50
Invasive Surgery as a Novel Hemostatic Technique		
H. Sakakita1, Y. Ikehara1, N. Shimizu2, S. Ikehara1, J. Kim1 (1AIST, 2Univ. of Tokyo) ........ 15[B-3]

Plasma-Biological Surface Interaction for Food Hygiene: Real-time in situ Electron
14:50–15:10
Spin Resonance Measurements
K. Ishikawa1, H. Mizuno1, H. Tanaka1, H. Hashizume2, T. Ohta2, M. Ito2, K. Takeda1,
		
H. Kondo1, M. Sekine1, M. Hori1 (1Nagoya Univ., 2Meijo Univ.) ........ 17
Break (15:10–15:30)– xi –

Session C Atmospheric Pressure Plasma and non-plasma Reaction (15:30–16:30)
Chairpersons: T. Nozaki (Tokyo Inst. of Tech), E. Stamate (Tech. Univ. of Denmark)[C-1]

Elongated Inductively Coupled Thermal Plasma Torch Operable
15:30–15:50
in Atmospheric Pressure
T. Okumura1, H. Kawaura2
		(1Panasonic Corp., 2CV Research Corp.) ........ 21[C-2]

A Physical Model for Leading Wave Crystallization Induced by
15:50–16:10
Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Films
S. Hayashi, Y. Fujita, T. Kamikura, K. Sakaike, M. Akazawa, S. Higashi		(Hiroshima Univ.) ........ 23[C-3]

Evaluation of gas-surface reaction dynamics during the plasmaless Si etching
16:10–16:30
using NO/F2 gas mixture
S. Tajima, T. Hayashi, K. Ishikawa, M. Sekine, M. Hori		
(Nagoya Univ.) ........ 25
Break (16:30–16:40)

Session D Manufacturing Technology (16:40–18:40)
Chairpersons: M. Nakamura (SEMATECH Inc.), T. Tatsumi (SONY Corp.)[D-1]<Invited> Quality control for dry process through APC/EES
16:40–17:20
		
T. Hirai1, M. Kano2, T. Tatsumi3		(1Sony Semiconductor Corp., 2Kyoto Univ., 3Sony Corp.) ........ 29[D-2]<Invited> Modeling and Prediction of Degradation in Complex Systems
17:20–18:00
Operating Under Variable Operating Conditions
D. Djurdjanovic (Univ. of Texas) ........ 31[D-3]

TEOS Etch Rate Predictions Using Virtual Metrology
18:00–18:20
M. Ito1, H. Hamaoka1, R. Veerasingam2, S. K. Nam2, E. Sevillano2, K. Nojiri1		(1Lam Research Co. Ltd., 2Lam Research Corp.) ........ 33[D-4]
Innovative APC, Using Virtual Metrology with Advance Sensors
18:20–18:40
		
H. K. Lee, K. H. Baek, S. Han, K. Shin, H. G. An, H. Cho (Samsung Electronics Co. Ltd.) ........ 35

Banquet (18:50–20:30)

Friday, November 16, 2012 
Session E Novel Plasma Deposition and Monitoring (9:00–10:40)
Chairpersons: M. Hiramatsu (Meijo Univ.), N. Itagaki (Kyushu Univ.)[E-1]<Invited> Controllable graphene growth using novel plasma catalytic deposition
9:00–9:40
		
T. Kato, T. Kaneko, R. Hatakeyama (Tohoku Univ.) ........ 39[E-2]

High performances of microcrystalline Si thin film formation for a solar cell
9:40–10:00
by measurement and control of hydrogen radicals in the SiH4/H2 plasma
Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, M. Hori		
(Nagoya Univ.) ........ 41[E-3]

Development of ICP-Enhanced Reactive Sputtering System with Multiple
10:00–10:20
Low-Inductance Antenna Modules for Large-Area Deposition of Silicon Films
		
Y. Setsuhara1, K. Takenaka1, A. Ebe2 (1Osaka Univ., 2EMD Corp.) ........ 43[E-4]
Monitoring of electron density and wall deposit by curling probe during plasma process 10:20–10:40
		
A. Pandey, M. Imai, H. Kanematsu, S. Ikezawa, K. Nakamura, H. Sugai (Chubu Univ.) ........ 45
Break (10:40–10:50)– xii –

Poster Session (10:50–12:30)
Chairpersons: K. Kurihara (Toshiba Corp.), K. Nakamura (Mitsubishi Corp.)
Surface Reaction and Etching Technology[P-11]The enhancement factors of substrate oxidation in O2/FG ashing process		
M. Shinohara, T. Maruyama (Renesas Electronics Corp.) ........ 49[P-12]

Surface treatment and characterization of ITO thin films using cyclonic atmosphericpressure plasma
C. Y. Tsai, C. Huang (Yuan Ze Univ.) ........ 51[P-13]

Plasma exposure effect on nanoporous SiCOH dielectric films at an argon plasma condition
B. H. Moon1, B. H. Joo1, Y. M. Sung1, K-W Hsu2, F. A. Choudhury2, J. L. Shohet2
		(1Kyungsung Univ., 2Univ. of Wisconsin-Madison) ........ 53[P-14]

Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposeddual-frequency CCP
T. Komuro1, K. Takeda1, K. Ishikawa1, M. Sekine1, Y. Ohya2, H. Kondo1,
		
M. Hori1 (1Nagoya Univ., 2Tokyo Electron Miyagi Ltd.) ........ 55[P-15]
Microfabrication of Silicon by Reactive Ion Etching Using CO2 Plasma		
A. Matsutani1, H. Ohtsuki2, F. Koyama1 (1Tokyo Inst. of Tech., 2Samco Inc.) ........ 57[P-16]
Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases
		T. Hayashi, K. Ishikawa, M. Sekine, M. Hori (Nagoya Univ.) ........ 59[P-17]A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism
K. Asano1, Y. Miyawaki1, K. Ishikawa1, M. Sekine1, K. Takeda1, A. Ito2, H. Matsumoto2,
		
H. Kondo1, M. Hori1 (1Nagoya Univ., 2ZEON Corp.) ........ 61[P-18]

Studies on Plasma Etching of Si3N4 in Capacitively Coupled Plasma employing C5HF7
Y. Miyawaki1, Y. Kondo1, M. Sekine1, K. Ishikawa1, T. Hayashi1, K. Takeda1, A. Ito2,
		
H. Matsumoto2, M. Hori1 (1Nagoya Univ., 2ZEON Corp.) ........ 63[P-19]

Etching Characteristics of MTJ Materials using CO/NH3 Gas Combination in
Pulsed-bias ICP System
M. H. Jeon, K. J. Ahn, K. N. Kim, T. H. Kim, G. Y. Yeom		
(Sungkyunkwan Univ.) ........ 65
Plasma Generation, Diagnostics and Monitoring Technology[P-21]
Calibrated optical emission spectra of CO2 and H2/N2 plasmas in vacuum ultraviolet
wavelength range
K. Sasaki1, S. Soma1, K. Kurihara2 (1Hokkaido Univ., 2Toshiba Corp.) ........ 67[P-22]
N2 dissociation in a matrix ECR plasma source		
C. Irimiea1,2, S. A. Chiper2, E. Stamate1 (1Tech. Univ. of Denmark, 2Al. I. Cuza Univ.) ........ 69[P-23]
Dielectric barrier discharge microplasma in small discharge gaps
		
M. Blajan, K. Shimizu (Shizuoka Univ.) ........ 71[P-24]
Characterization of an inductively coupled plasma microjet under low pressures
		Q. Chen, S. Tsuchiya, T. Ichiki (Univ. of Tokyo) ........ 73[P-25]
Analytic model for an impedance analysis of a ferrite inductively coupled plasma		D. You1, S. Ahn2, H. Y. Chang1 (1KAIST, 2Korea Inst. of Energy Res.) ........ 75[P-26]

Fault detection of rapid thermal annealing equipment by Principal Component Regression
Y. Nakao, T. Hisaeda, I. Namura, H. Kokura, H. Kataoka, S. Fukuyama
		(Fujitsu Semiconductor Ltd.) ........ 77[P-27]Development of cyclonic atmospheric pressure glow-discharge for a large-area organosilicon
film deposition
J. H. Lin, C. Y. Tsai, W. T. Liu, Y. K. Syu, C. Huang (Yuan Ze Univ.) ........ 79[P-28]

Plasma Characteristics of Inductively Coupled Plasma Using Dual Frequency Antenna
T. H. Kim1, K. J. An1, K. N. Kim1, J. S. Seo1, A. Mishra1, H. B. Jeong1, J. W. Bae1, G. Y. Yeom1,2		
(1Sungkyunkwan Univ., 2Sungkyun Advanced Inst. of Nanotech.) ........ 81– xiii –[P-29]Characterization of Steady-State Plume in Plasma Electron Ablation Method		
T. Banno (Univ. of Tokyo) ........ 83[P-30]
Ideal Low Electron Temperature Plasma Reactor
		

R. W. Boswell (Australian National Univ.) ........ 85

Modeling and Simulation[P-31]
Study of low pressure inductively coupled Ar/N2 plasmas: Effects of dc bias and gas flow rate		L. Z. Tong (Keisoku Engineering System Co., Ltd.) ........ 87[P-32]
Bosch Process Simulations: From the Plasma to the Feature Scale
		
S. López-López1, A. Williams2, J. Tennyson2 (1Quantemol Ltd, 2Univ. College London) ........ 89[P-33]
Molecular Dynamics Analysis of Surface Structure and Etch Products in Si/Cl and Si/Br Systems
		
N. Nakazaki, H. Tsuda, Y. Takao, K. Eriguchi, K. Ono (Kyoto Univ.) ........ 91
CVD/Sputter Deposition[P-41]
Material and precursor design for PECVD SiCH films to realize low-k cap layer in
ULSI Cu-interconnects: porosity control and its analysis
H. Shimizu1, N. Tajima2, T. Momose1, A. Uedono3, Y. Shimogaki1		(1Univ. of Tokyo, 2NIMS, 3Tsukuba Univ.) ........ 93[P-42]

Inductively Coupled Plasma-Assisted Mist CVD for Low Temperature andHigh Rate Deposition of ZnO Films
K. Takenaka, Y. Okumura, Y. Setsuhara (Osaka Univ.) ........ 95[P-43]

Sputter deposition of Epitaxial Zinc-Indium Oxynitride Films for Excitonic Transistors
N. Itagaki1,2, K. Matsushima1, T. Hirose1, K. Kuwahara1, D. Yamashita1, H. Seo1, K. Kamataki1,		
G. Uchida1, K. Koga1, M. Shiratani1 (1Kyushu Univ., 2JST-PRESTO) ........ 97[P-44]

N2 or H2/isobutane supermagnetron plasma chemical vapor deposition of hydrogenatedamorphous CNx films for amorphous CNx:H/p-Si photovoltaic cell application
		
H. Kinoshita, Y. Ninomiya, T. Kato (Shizuoka Univ.) ........ 99[P-45]

Nucleation mechanism of self-organized vertical nano-graphenes grown using inductively
coupled plasma enhanced chemical vapor deposition
		
R. Tsukada1, Y. Nihashi1, M. Hiramatsu1, H. Kondo2, M. Hori2 (1Meijo Univ., 2Nagoya Univ.) ...... 101[P-46]

Enhancing the Electron Field Emission Properties of Ultra-nanocrystalline Diamond Filmsby Growing on Textured Si Substrate
		 W. C. Shih1, P. C. Huang1, M. S. Wu1, H. C. Chen2, I. N. Lin2 (1Tatung Univ., 2Tamkang Univ.) ...... 103[P-47]

Thermal Stability of Hydrogenated and Hydrogen Free DLC Films by Elevated Heating
T. Kadoguchi1, H. Tanoue1, Y. Suda1, H. Takikawa1, M. Kamiya2, M. Taki3, Y. Hasegawa3,
N. Tsuji3, T. Ishikawa4 (1Toyohashi Univ. of Tech., 2Itoh Optical Industrial Co., Ltd.,
3
		
Onward Ceramic Coating Co., Ltd., 4Hitachi Tool Engineering, Ltd.) ...... 105[P-48]The Effect of TiO2 and MgO Powder Spray on the Discharge Characteristics of an AC-PDP
S. S. Wi1, D. K. Lee2, Y. M. Sung3, H. J. Lee1, H. J. Lee1
1		( Pusan National Univ., 2Dong-Eui Univ., 3Kyungsung Univ.) ...... 107

Plasma Processes for 3D Device, FPD, Photovoltaic Devices[P-51]
Performance enhancement of c-Si/organic heterojunction solar cells by using Si quantum dots
Y. Wang1, G. Uchida1, H. Seo1, N. Itagaki1,2, K. Koga1, M. Shiratani1		(1Kyushu Univ., 2JST-PRESTO) ...... 109[P-52]

Optimum process condition of Ti films deposition on porous TiO2 layer using RF magnetron
sputtering for photovoltaic application
A. Chaoumead1, H. D. Park1, D. J. Kwak1, Y. M. Sung1, C. H. Han2
		
(1Kyungsung Univ., 2Korea Inst. of Energy Res.) ...... 111[P-53]

Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure
Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application toThin-Film Transistor Fabrication
		 K. Sakaike, Y. Kobayashi, S. Nakamura, S. Hayashi, M. Akazawa, S. Higashi (Hiroshima Univ.) ...... 113– xiv –

[P-54]Fabrication of transparent CuCrO2:Mg/ZnO p-n junctions prepared by RF sputteringon ITO glass substrate
L. F. Chen1, Y. P. Wang2, T. W. Chiu2, W. C. Shih1, M. S. Wu1
		(1Tatung Univ., 2National Taipei Univ. of Tech.) ...... 115[P-55]
Fabrication of Indium Tin Oxide Thin FIlms by FTS Sytem in Various Conditions
		
K. H. Kim1, J. S. Hong2, N. Matsushita2 (1Gachon Univ., 2Tokyo Inst. of Tech.) ...... 117[P-56]
Properties of GAZO/Ag/GAZO/Ag/GAZO transparent conductive multilayer film prepared by		facing targets sputtering
Y. S. Jung, H. W. Choi, K. H. Kim (Gachon Univ.) ...... 119[P-57]
Properties of Ga-Al doped ZnO films prepared on the polymer substrate		K. H. Kim, C. W. Bark, K. H. Kim (Gachon Univ.) ...... 121[P-58]
Electrochromic properties of tungsten oxide films prepared by reactive sputtering		
M. H. Kim, T. Y. Kang, C. W. Bark, H. W. Choi, K. H. Kim (Gachon Univ.) ...... 123[P-59]

Luminescence characteristics of electrochemical cell using TiO2 layers preparedby dry and wet coating methods		
S. H. Park, T. W. Kim, M. W. Park, Y. M. Sung (Kyungsung Univ.) ...... 125[P-60]

Study of TSV Formation with ICP Parameter Control
Y. C. Hu1, C. H. Chiang1, K. H. Chen2,
C. T. Chiu2, C. T. Chuang1, W. Hwang1, J. C. Chiou1, H. M. Tong2, K. N. Chen1		(1National Chiao Tung Univ., 2Advanced Semiconductor Engineering Inc.) ...... 127

Plasma Processes for Power Device[P-61]A High Temperature Plasma Etching of GaN and Its Reaction Mechanism
R. Kometani1, S. Chen1, M. Liu1, K. Ishikawa1, H. Kondo11, K. Takeda1, T. Egawa2,
		
H. Amano1, M. Sekine1, M. Hori1 (1Nagoya Univ., 2Nagoya Inst. of Tech.) ...... 129[P-62]
Atmospheric pressure microplasma treatment of GaN surface
		
Y. Noma1, M. Blajan1, S. Naritsuka2, K. Shimizu1 (1Shizuoka Univ., 2Meijo Univ.) ...... 131[P-63]

Damage Characteristics of p-GaN Surfaces Etched by Capacitively Coupled Radio
Frequency Argon Plasmas
R. Kawakami1, M. Niibe2, Y. Nakano3, M. Konishi1, Y. Mori1, A. Takeichi1, K. Tominaga1,		
T. Mukai4 (1Univ. of Tokushima, 2Univ. of Hyogo, 3Chubu Univ., 4Nichia Corp.) ...... 133[P-64]
In-situ Photoluminescence Measurements of GaN Films Exposed to Inductively-Coupled Plasmas
		
K. Nakamura, M. G. Chen, Y. Nakano, H. Sugai (Chubu Univ.) ...... 135
Plasma Processes for Biological and Medical Application, MEMS
[P-71]
Investigation of Sterilization and Biological Effect using Temperature Controllable
Multi-Gas Plasma Jet Source
T. Takamatsu1, T. Oshita1, A. Kawate1, K. Uehara1,
N. Nakashima1,2, H. Miyahara1, Y. Matsumoto1, A. Okino1
		(1Tokyo Inst. of Tech., 2Plasma Factory, Co. Ltd.) ...... 137[P-72]

Growth promotion of Raphanus sativus L. and Oryza sativa using a combinatorial
plasma irradiation method
S. Kitazaki, T. Sarinont, K. Koga, M. Shiratani, N. Hayashi
		(Kyushu Univ.) ...... 139[P-73]

Effect of Plasma Gas Temperature and Plasma Gas Species on Sterilization of E. coli
A. Kawate1, T. Takamatsu1, T. Oshita1, K. Uehara1, N. Nakashima1,2, H. Miyahara1, A. Okino1
		(1Tokyo Inst. of Tech., 2Plasma Factory, Co. Ltd.) ...... 141[P-74]

Plant growth regulation and redox reactions in plants induced by oxygen radical
generated by air plasma
N. Hayashi, S. Kitazaki, K. Koga, M. Shiratani (Kyushu Univ.) ...... 143[P-75]

Plasma surface modification of carbon nanowalls for biosensor application
M. Nagashima1, T. Maeda1, M. Hiramatsu1, H. Watanabe2, H. Kondo2, M. Hori2
		(1Meijo Univ., 2Nagoya Univ.) ...... 145– xv –

Atmospheric Pressure Plasma and Liquid Plasma[P-81]
Rapid Thermal Annealing of SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiration
		
R. Ashihara, H. Hanafusa, H. Murakami, S. Hayashi, S. Higashi (Hiroshima Univ.) ...... 147[P-82]

Improvement of adhesion strength of epoxy resin/PTFE interface by atmospheric pressureplasma treatment of PTFE
Y. Hara, K. Yamamura (Osaka Univ.) ...... 149[P-83]

Atmospheric pressure plasma CVD of amorphous fluorocarbon films using hexafluorobenzene
and argon
W. C. Ma, C. Y. Tsai, W. T. Liu, Y. K. Syu, C. Huang (Yuan Ze Univ.) ...... 151[P-84]

Dynamic decomposition of CO2 by large flow atmospheric microwave plasma LAMP
S. Ikezawa1, S. Niwa1, Y. Morii1, A. Pandey1, N. Nagase2, H. Sugai1		(1Chubu Univ., 2Nagase Ironworks Co. Ltd.) ...... 153[P-85]
Interfacial Analysis of Electroless Copper Thin Film on Fluorocarbon polymer Fabricated		by Plasma Irradiation with Graft Copolymerization
K. Ooka, Y. Hara, K. Yamamura		(Osaka Univ.) ...... 155[P-86]

Investigation of NOx reduction by low temperature oxidation and direct plasma treatment
E. Stamate1, C. Irimiea1,2, M. Salewski1
1		( Tech. Univ. of Denmark, 2Al. I. Cuza Univ.) ...... 157
Lunch (12:30–13:30)

Session F <Arranged Session>

Non-Volatile Memory Processes (13:30–15:30)
Chairpersons: M. Sekine (Nagoya Univ.), M. Fukasawa (Sony Corp.)[F-1]<Invited> Recent Progress in Non-Volatile Devices and Processes for Low-Power
13:30–14:10
Electronics
N. Takaura, T. Sugii, T. Takenaga, H. Hada, T. Sakai, A. Kajita,		N. Sugii, S. Kimura, N. Sumihiro (LEAP) ...... 161[F-2]<Invited> The development of etching technology for non-volatile memories
14:10–14:50
		
Y. Kokaze, K. Suu (ULVAC, Inc.) ...... 163[F-3]

GCIB etching under acetic acid vapor for etch-resistant materials
14:50–15:10
A. Yamaguchi1, R. Hinoura1, N. Toyoda1, K. Hara2, I. Yamada1		(1Univ. of Hyogo, 2Tokyo Electron Ltd.) ...... 165[F-4]
Etching reactions of CoFeB By Ar+ and CO+ ion irradiation
15:10–15:30
		
K. Karahashi, T. Ito, S. Hamaguchi (Osaka Univ.) ...... 167
Break (15:30–15:50)

Session G

Etching Technology (15:50–16:50)
Chairpersons: S. Y. Kang (Tokyo Electron Ltd.), H. Hayashi (Toshiba Corp.)[G-1]

15nm HP patterning with EUV lithography and SADP
15:50–16:10
L. Souriau1, D. Hellin2, E. Kunnen1, J. Versluijs1, H. Dekkers1, S. Xiaoping1, J. Albert1,
I. Orain2, Y. Kimura2, K. Xu1, J. Vertommen2, V. Wiaux1, W. Boullart1		(1IMEC, 2Lam Research Corp.) ...... 171

			
[G-2]
Effect of Wafer-bias Frequency on Selectivity and Gate-etch Profile in the Gate-last
16:10–16:30
Fin-FET Process
M. Kamibayashi1, N. Kofuji1, M. Mori2, N. Negishi1		(1Hitachi, Ltd., 2Hitachi High-Technologies Corp.) ...... 173[G-3]

Evaluation of sputtering yields of silicon nitride by fluoro/hydrofluorocarbon ions
16:30–16:50
by molecular dynamics (MD) simulations: modeling of thermal relaxation processes
for polymer formation
K. Miyake1, R. Shigekawa1, T. Ito1, M. Isobe1, K. Karahashi1,		
M. Fukasawa2, T. Tatsumi2, S. Hamaguchi1 (1Osaka Univ., 2Sony Corp.) ...... 175– xvi –

Session H

Plasma Damage (16:50–17:50)
Chairpersons: H. Toyoda (Nagoya Univ.), N. Negishi (Hitachi Ltd.)[H-1]

Photon-stimulated surface reaction and generation of damage to hydrogenated
16:50–17:10
silicon nitride in fluorocarbon plasma
M. Fukasawa1, H. Matsugai1, T. Honda1, Y. Miyawaki2, Y. Kondo2, K. Takeda2, H. Kondo2,
K. Ishikawa2, M. Sekine2, K. Nagahata1, F. Uesawa1, M. Hori2, T. Tatsumi1		(1Sony Corp., 2Nagoya Univ.) ...... 179[H-2]

Three-Dimensional Parameter Mapping of Annealing Processes for
17:10–17:30
HBr/O2-Plasma-Induced Damages in Si Substrates
A. Matsuda1, Y. Nakakubo1, M. Fukasawa2, Y. Takao1, T. Tatsumi2, K. Eriguchi1, K. Ono1
		
(1Kyoto Univ., 2Sony Corp.) ...... 181[H-3]

An in-situ sequential H and N radical exposure process for recovery
17:30–17:50
of plasma-damaged GaN
Z. Liu1, S. Chen1, Y. Lu1, R. Kometani1, K. Ishikawa1,
H. Kano2, K. Takeda1, H. Kondo1, M. Sekine1, T. Egawa3, H. Amano1, M. Hori1		(1Nagoya Univ., 2Nu-Eco Eng. Co., Ltd., 3Nagoya Inst. Tech.) ...... 183

Closing Remarks (17:50–18:00)

N. Negishi (Hitachi, Ltd.)– xvii –