Advance Program

LEDIA’18

The 6th International Conference on Light-Emitting Devices
and Their Industrial Applications
April 25–27, 2018, Pacifico Yokohama, Japan
Co-located with Optics & Photonics International Congress 2018
Sponsored by
Akasaki Research Center (ARC), Nagoya University

In cooperation withThe Illuminating Engineering Institute of Japan (IEIJ)
Japan LED Association (JLEDS)
Optoelectronics Industry and Technology Development Association (OITDA)
The 125th Committee on Mutual Conversion between Light and Electricity, Japan Society for the
Promotion of Science
The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic Devices, Japan
Society for the Promotion of ScienceCONFERENCE COMITTEE
Conference Chairs
Chair:
Hiroshi Amano
Vice Chair: Tohru Honda(Nagoya Univ., Japan)(Kogakuin Univ., Japan)

Advisory Members
Isamu Akasaki
Michal Boćkowski
Detlef Hommel
Akihiko Yoshikawa
Bo Monemar(Meijo Univ., Nagoya Univ., Japan)(Polish Academy of Sci., Poland)(Univ. Bremen / EIT+, Germany)(Chiba Univ., Japan)(Liköping Univ./ Lund Univ., Sweden)

Steering Committee
Chair:
Yoshinao KumagaiVice Chair: Tetsuya Takeuchi
Member:Gen-ichi Hatakoshi(Tokyo Univ. Agri. & Tech., Japan)(Meijo Univ., Japan)(Waseda Univ., Japan)

General Affairs Committee
Chair:

Yoshio Honda(Nagoya Univ., Japan)

Financial Committee
Chair:Tomoyuki Tanikawa (Tohoku Univ., Japan)

Local Arrangement Committee
Chair:
Members:

Hisashi Murakami(Tokyo Univ. Agri. & Tech., Japan)
Yoshio Honda(Nagoya Univ., Japan)
Narihito Okada(Yamaguchi Univ., Japan)
Tomohiro Yamaguchi (Kogakuin Univ., Japan)

Program Committee
Chair:
Members:

Ryuji Katayama(Osaka Univ., Japan)
Jaehee Cho(Chnbuk National Univ., Korea)
Gen-ichi Hatakoshi (Waseda Univ., Japan)
Yoshio Honda(Nagoya Univ., Japan)
Jong-Kyu Kim(Pohang Univ. Sci. & Tech., Korea)
Young-Joo Kim(Yonsei Univ., Korea)
Yoshinao Kumagai (Tokyo Univ. Agri. & Tech., Japan)
Hisashi Murakami(Tokyo Univ. Agri. & Tech., Japan)
Narihito Okada(Yamaguchi Univ., Japan)
Tetsuya Takeuchi(Meijo Univ., Japan)
Tomoyuki Tanikawa (Tohoku Univ., Japan)
Jonathan Wierer(Lehigh Univ., USA)
Tomohiro Yamaguchi (Kogakuin Univ., Japan)

Floor Plan
Pacifico Yokohama

4/26, 27

Poster Sessions
4/25-27

OPIE
4/23-27

OPIC

Exhibition Hall

Conference Center

OPIC 2018・23-27 April, 2018

Entrance

221

Registration
222

223

4/26, 27

PLD（212）

224

211

212

213

4/25-27

LSC（213）

4/23

Student course（211）

4/24

Joint

LSSE + IoT-SNAP
315

4/25

Joint

LIC + PLD + SLPC
4/24-26

4/26, 27314

XOPT（313+314）

313

LIC

（302）

312

4/23-26

4/24, 26

311

HEDS（311+312）

ALPS1
4/25

Joint

ALPS1 + XOPT + HEDS

4/24, 26, 27

（303）

LDC

302

4/25

Joint

LDC + LEDIA + IoT-SNAP（301）

4/24AM, 25-27

LSSE（316）

OPIC 2018・23-27 April, 2018

304

321

301

303

316

317

318

4/25

Joint

419

OMC & BISC

418

4/26, 27

OMC
4/26, 27

BISC（419）

4/24,26417

SLPC（416+417）

416
415

4/25-27414

4/24, 26, 27

ICNN（414+415）

413

IoT-SNAP（413）412

4/26, 27

411

LEDIA（411+412）

425

421

ALPS2（511+512）
4/25 9:00-12:10

Plenary Session

511

422

423

424

5

512

4/24-27

（418）

502

501

503

（501+502）

501

513

514

OPIC 2018・23-27 April, 2018

PROGRAM AT A GLANCE
April 25 (Wed)April 26 (Thu)

April 27 (Fri)

9:00
SESSION IADVANCED
DEVICES I
10:15
10:45

BREAK

9:15
SESSION V
CHARACTERIZATIONS
10:30

SESSION II
11:00
SHORT
PRESENTATIONBREAK
SESSION VI
GROWTHS

11:42
12:00
LUNCH

13:00
13:30
13:45

14:45

Opening
IOT-LDC-LEDIAJOINTSESSION

13:00
SESSION II
POSTER

14:30

BREAK

15:15
IOT-LDC-LEDIAJOINTSESSION

LUNCH

15:45

SESSION IIINOVELAPPLICATION &MATERIALSSESSION VII
ADVANCEDPROCESSES

14:45
15:15

SESSION VIII
EXTENDED
WAVELENGTH
DEVICES

BREAK

16:15
SESSION IV
ADVANCED
DEVICES II

17:15
17:45

BREAK

16:45

17:30
17:45

SESSION IX
TUTORIAL
Closing

ADVANCE PROGRAM
Wednesday, April 25, 2018
JOINT SESSION <Room 301>
Chairs:Atsushi Kanno
National Institute of Information and Communications Technology, Japan
Sunao Kurimura
Natinal Institute of Material Science, Japan
Ryuji Katayama
Osaka University, Japan
13:30-13:45 Opening Remarks
13:45-14:15 IOT-LDC-LEDIA-1 Invited
IoT Revolution and Business Opportunities in Emerging Market in ASEAN
RegionHuei Ee Yap
LP-Research Inc., Japan
14:15-14:45 IOT-LDC-LEDIA-2 Invited
Fiber-optic-based Life Cycle Monitoring of Aerospace Composite Structures:
Toward Digitalization of Next Generation Aircraft
Shu Minakuchi, Nobuo Takeda
University of Tokyo, Japan
14:45-15:15 Break
15:15-15:45 IOT-LDC-LEDIA-3 Invited
Laser Diode Based Underwater Optical Wireles Communication
Takao Sawa1, Koji Tojo2, Naoki Nishimura2, Shin Ito3
1
JAMSTEC, Japan, 2Shimadzu Corp., Japan, 3SAS Co., Ltd., Japan
15:45-16:15 lOT-LDC-LEDIA-4 Invited
Recent Progress of Retinal Imaging Laser Technology
Mitsuru Sugawara
QD Laser, Japan
16:15-16:45 lOT-LDC-LEDIA-5 Invited
III-nitride Semiconductor Light Emitting Transistors
Kazuhide Kumakura1 Junichi Nishinaka1, Hideki Yamamoto1
1
NTT Basic Research Laboratories, NTT Corporation, Japan
16:45-17:15 lOT-LDC-LEDIA-6 InvitedHigh Photosensitivity HFET-type Nitride Based Photosensors

Motoaki Iwaya1 Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,2
1
Meijo University, Japan
2
Akasaki Research Center, Nagoya University

Thursday, April 26, 2018
SESSION I: ADVANCED DEVICES I <Room 411+412>
Chairs:Jeehee Cho
Chonbuk National University, Korea
Hoi Wai Choi
The University of Hong Kong, Hong Kong
9:00-9:30
LEDIA1-1
InvitedDevelopment of Advanced Hybrid GaN-based Tunnel Junction LEDs
James S. Speck1
1
University of California, Santa Barbara, USA
9:30-9:45
LEDIA1-2
Characterization of AlGaN-Based Tunnel Junction Ultraviolet Light Emitting
DiodesYusuke Goto1, Hisanori kojima1, Kazuyoshi Iida1, Myunghee Kim1, Norikatsu Koide1,
Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Isamu Akasaki1
1
Meijo University, Japan
9:45-10:00 LEDIA1-3
Electroluminescence enhancement for near-ultraviolet light emitting diodes
with graphene/AZO-based current spreading layers
Li Lin1, Yiyu Ou1, Xiaolong Zhu2, Berit Herstroem3, Flemming Jensen3, Haiyan Ou1
1
Department of Photonics Engineering, Technical University of Denmark, Denmark2
Department of Micro- and Nanotechnology, Technical University of Denmark
3
DTU Danchip, Technical University of Denmark
10:00-10:15 LEDIA1-4
GaN metal–semiconductor–metal ultraviolet photodetector with a reducedgraphene oxide Schottky contact
Bhishma Pandit1, Jaehee Cho1
1
Chonbuk National University, Korea
10:15-10:45 BreakSESSION II: SHORT PRESENTATION & POSTER SESSION<Room 411+412>
Chair: Hisashi Murakami
Tokyo University of Agriculture and Technology, Japan
10:45-10:48 LEDIAp2-1
AlGaN-based deep UV flip-chip light emitting diode with AlN/Al reflector
Tae Hoon Park1, Tae Ho Lee1, Tae Geun Kim1
1
Korea University, Korea
10:48-10:51 LEDIAp2-2
The Effect of the Metallic Nano-Grating for 365nm Polarized UV-LED
Eun-Kyung Chu1, Nam-Woo Kang1, Beom-Rae Noh1, Hee-Jung Choi1, Yung-Ju
Kwon2, Kyoung-Kook Kim1
1
Dept. of Advanced Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
10:51-10:54 LEDIAp2-3
Wide Band Gap Transparent Conductive Oxides of Oxide/Metal/Oxide TripleLayer Structure based on Fluorine Tin Oxide
Si-Won Kim1, Gyu-Jae Yohn1, Soae Jeong1, Beom-Rae Noh1, So-Yeon Park2,
Suyeon Son2, Kyoung-Kook Kim1,2
1
Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
10:54-10:57 LEDIAp2-4
Efficient blue micro-light-emitting diodes using SiOx-based glass electrode
Kyung Rock Son1, Byeong Ryong Lee1, Tae Ho Lee1, Sang Hoon Oh1
1
School of Electrical Engineering, Korea University, Korea
10:57-11:00 LEDIAp2-5
Self-Standing ZnO Nanotube/SiO2 Core-Shell Arrays for High Photon
Extraction Efficiency in III-Nitride Emitter
Hee-Jung choi1, Semi Oh2, Soo-Hyun Kang1, Kab Ha1, Eun-Kyung Chu1, Won-Seok
Lee3, Soon-Hwan Kwon3, Kyoung-Kook Kim1
1
Dept. of Advanced Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Materials Science & Technology (GIST), Korea
3
Dept. of Nano Optical Engineering, Korea
11:00-11:03 LEDIAp2-6
Improved light extraction efficiency of GaN-based near ultraviolet lightemitting diodes using TiO2/HfO2 DBR electrode with Conductive Filaments
Sanghoon Oh1, Kyung Rock Son1, Tae Geun Kim1
1
School of Electrical Engineering, Korea University, Korea
11:03-11:06 LEDIAp2-7
Thermal annealing effect of Ti buffer layer for the growth of GaN film

Tzu-Ting Lin1, Shih-Hao Chan1, Shao-Ze Tseng1, Sheng-Hui Chen1
1
National Central University, Taiwan
11:06-11:09 LEDIAp2-8
Characterizations and Growth of ZnO: B Films Grown by Low-Pressure
Chemical Vapor Deposition on Glass Substrates
Wei-Ming Lee1, Ying-Hsiang Wang1, Chin-Yi Tsai1, Shih-Wei Feng1, Chien-Hsun
Chen2, Hsiang-Chen Wang3, Li-Wei Tu4
1
Department of Applied Physics, National University of Kaohsiung, Kaohsiung,Taiwan2
Green Energy and Environment Research Labs, Industrial Technology ResearchInstitute, Hsinchu, Taiwan
3
Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan
4Department of Physics and Center for Nanoscience and Nanotechnology, National
Sun Yat-Sen University, Kaohsiung, Taiwan
11:09-11:12 LEDIAp2-9
A study on p-type Conductivity of Phosphorus-doped ZnO Thin Film using RF
Sputtering and Annealing
So-yeon Park1, Si-Won Kim2, Gyu-Jae Yohn2, Hee-Jung Choi2, Yebin Im1, KyoungKook Kim1,2
1
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
2
Dept. of Advanced Convergence Technology, and Research Institute of Advanced
Convergence Technology, Korea Polytechnic University, Korea
11:12-11:15 LEDIAp2-10
Photoluminescence investigation of near white light-emitting zinc stannatebased phosphors
Mu-Tsun Tsai1, Chih-Chuan Chan1, Chien-Hung Lin1
1
Department of Materials Science Engineering, National Formosa University,Taiwan
11:15-11:18 LEDIAp2-11
Highly efficient photonic conversion mediums based on polymer complexes
for applications in light emitting devices
Petronela Horlescu1, Corneliu S. Stan1, Simona E. Bacaita1
1
Gheorghe Asachi Technical University, Romania
11:18-11:21 LEDIAp2-12
Numerical and Experimental Investigations for Deposited Nanosilver Tracks on
Polyimide Films with Heterostructures
Chia-Yen Chan1, Kuan-Cheng Shih2, Yu-Hsin Lin1
1
Instrument Technology Research Center, National Applied Research Laboratories,
Taiwan2Kingley Rubber Industrial Co., Ltd., Taiwan
11:21-11:24 LEDIAp2-13
Effect of the Oxygen Concentration on Electrical Properties of GaN Crystals

Grown with the Na-flux Point Seed Method
K. Endo1, T. Yamada1, H. Kubo1, K. Murakami1, M. Imanishi1, M. Yoshimura1, and Y.
Mori1
1Osaka University, Japan
11:24-11:27 LEDIAp2-14
The effect of nitrogen pressure on Threading Dislocation Density during the
Na-flux GaN Growth using Point Seed Technique
Yuki Sawada1, Takumi Yamada1, Kosuke Murakami1, Keisuke Kakinouchi1, Kosuke
Nakamura1, Kanako Okumura1, Tomoko Kitamura1, Yasuhiro Unoki1, Masayuki
Imanishi1, Masashi Yoshimura1, and Yusuke Mori1
1
Osaka University, Japan
11:27-11:30 LEDIAp2-15
Reduction of Li impurity in the freestanding GaN substrate fabricated using thesapphire dissolution technique in the Na-flux growth
Takumi Yamada1, Masayuki Imanishi1, Kosuke Murakami1, Kosuke Nakamura1,
Mamoru Imade1, Masashi Yoshimura1, and Yusuke Mori1
1
Osaka University, Japan
11:30-11:33 LEDIAp2-16
Sol-Gel-Derived Hole-Transporting NiOx Films for Perovskite CsPbBr3 Green
Light-Emitting Diodes
Chun-Yuan Huang1, Shyh-Jer Huang2, Yi-Hsiu Hsieh1
1National Taitung University, Taiwan
2
National Cheng Kung University, Taiwan
11:33-11:36 LEDIAp2-17
Optically Readable GaN-based Micro-LEDs Using NiO-based ReRAM as an NType Contact layer for Micro-LED Display
Byeong Ryong Lee1, Ju Hyun Park1, Hyun Tae Kim1, Kyung Rock Son1, Tae Geun
Kim1
1
Korea University, Korea
11:36-11:39 LEDIAp2-18
Optical and Device Characteristics of InGaN/GaN Light Emitting Diodes with
Multilayer Graphene as Transparent and Current Spreading Electrodes
Ying-Hsiang Wang1, Wei-Ming Lee1, Shih-Wei Feng1, Hsiang-Chen Wang2
1
Department of Applied Physics, National University of Kaohsiung, Taiwan
2
Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan
11:39-11:42 LEDIAp2-19
High Efficiency UV-Emitters with Micro-Hole Pattern and ITO Nanoparticles
Beom-Rae Noh1, Joon-Sung Kwon1, Nam-Woo Kang1, Eun-Kyung Chu1, Si-Won
Kim1, Kwang-Gyun Im2, Kyoung-Kook Kim1
1
Department of Advanced Convergence Technology, Korea
2
Department of Nano Optical Engineering, Korea

11:42-13:00 Lunch Break
13:00-14:30 Poster Session <Exhibition Hall A>

SESSION III: NOVEL APPLICATION & MATERIALS <Room 411+412>
Chairs:Ryuji Katayama
Osaka University, Japan
Je Won Kim
Namseoul University, Korea
14:30-15:00 LEDIA3-1
Invited
LED Technology for Dental Applications
Paul Michael Petersen1
1
Technical University of Denmark, Denmark
15:00-15:15 LEDIA3-2
Organosilicon-Functionalized Carbon Dots Based White LED
Yunfeng Wang1,2, Zhengmao Yin3, Chuanjian Zhou2, Zheng Xie1, Shuyun Zhou1
1
Technical Institute of Physics and Chemistry, Chinese Academy of Science, China
2
The HongKong Polytechnic University, China
3
College of Materials Science and Engineering, Qingdao University of Science andTechlogy, China
15:15-15:30 LEDIA3-3
Solution Processed All Inorganic Quantum Dots Light Emitting Diodes withUV Ozone Treatment
Hsin-Chieh Yu1,2, Yiyang Shen2, Hoang-Tuan Vu2, Chih-Chiang Yang2, Chun-Yuan
Huang3
1
Institute of Lighting and Energy Photonics, College of Photonics, National Chiao
Tung University, Taiwan
2Advanced Optoelectronic Technology Center, National Cheng Kung University,
Taiwan3
Department of Applied Science, National Taitung University, Taiwan
15:30-15:45 LEDIA3-4
Photonic conversion mediums based on polymer embedded Carbon Dots forapplications in light emitting/solar energy harvesting devices
Corneliu S. Stan1, Petronela Horlescu1, Catalina A. Peptu11Gheorghe Asachi Technical University, Romania
15:45-16:15 BreakSESSION IV: ADVANCED DEVICES II <Room 411+412>
Chairs:James S. Speck
UCSB, USA
Gen-ichi Hatakoshi
Waseda University, Japan
16:15-16:45 LEDIA4-1
InvitedGaN Monolithic Integration for Lighting and Display
Hoi Wai Choi1
1
The University of Hong Kong, Hong Kong
16:45-17:00 LEDIA4-2
Fabrication of 10x10 array structure of micro-LED display using Si micro-cup
substrate
Ryosuke Nawa1, Takeyoshi Onuma1, Tomohiro Yamaguchi1, Tohru Honda1
1
Kogakuin University, Japan
17:00-17:15 LEDIA4-3
GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted
Structure with Simplified Fabrication Process
So Kusumoto1, Masahiro Uemukai1, Ryuji Katayama1
1
Osaka University, Japan
17:15-17:45 LEDIA4-4
InvitedNano-Mold & Nano Structured LEDs
Je Won Kim1
1
Namseoul University, Korea

Friday, April 27, 2018
SESSION V: CHARACTERIZATIONS <Room 411+412>
Chairs:
Tetsuo Narita
Toyota Central R&D Labs. Inc., Japan
Jong Kyu Kim
Pohang University of Sci. and Technol., Korea
9:15-9:45 LEDIA5-1
InvitedNondestructive Analysis of Threading Dislocations in GaN by MultiphotonExcitation Photoluminescence
Tomoyuki Tanikawa1
1
Institute for Materials Research, Tohoku University, Japan
9:45-10:00 LEDIA5-2
Degradation of electro-optical parameters and electromigration of hydrogen in(In)AlGaN-based UVB LEDs

Johannes Glaab1, Jan Ruschel1, Tim Kolbe1, Arne Knauer1, Jens Rass1, Neysha
Lobo Ploch1, Markus Weyers1, Michael Kneissl1,2, Sven Einfeldt1
1
Ferdinand-Braun-Institut, Germany
2
Technische Universitaet Berlin, Berlin, Germany
10:00-10:15 LEDIA5-3
Microstructure of GaN fin LEDs: Characterization of Structural and Optical
Properties by STEM-CL
Gordon Schmidt1, F. Bertram1, P. Veit1, T. Hampel1, J. Hartmann2, F. Steib2, H. Zhou2,
J. Ledig2, S. Fündling2, H.-H. Wehmann2, A. Waag2, J. Cristen1
1
Otto-von-Guericke-University Magdeburg, Germany
2
Technische Universität Braunschweig, Germany
10:15-10:30 LEDIA5-4
Spectroscopic ellipsometry study on p-type NiO films
Mizuki Ono1, Kohei Sasaki2,3, Tomohiro Yamaguchi1, Masataka Higashiwaki3, Akito
Kuramata2, Shigenobu Yamakoshi2, Tohru Honda1, Takeyoshi Onuma1,3
1
Kogakuin University, Japan
2
Tamura Corporation, Japan
3
National Institute of Information and Communications Technology, Japan
10:30-11:00 BreakSESSION VI: GROWTHS <Room 411+412>
Chair:Tomoyuki Tanikawa
Institute for Materials Research, Tohoku University, Japan
11:00-11:30 LEDIA6-1
InvitedFormation mechanism of singular structure in AlInN layer grown on m-GaN
substrate by MOVPE
Yuya Inatomi1, Akira Kusaba1, Yoshihiro Kangawa1,2,3, Kazunobu Kojima4, Shigefusa
Chichibu4
1
Department of Aeronautics and Astronautics, Kyushu University, Japan
2
RIAM, Kyushu University, Japan
3
IMaSS, Nagoya University, Japan
4
IMRAM, Tohoku University, Japan
11:30-11:45 LEDIA6-2
Thermodynamic and experimental analyses of β-Ga2O3 growth by ozone
molecular beam epitaxy
Natsuki Ueda1, Yohei Sawada1, Keita Konishi1, Yoshiaki Nakata2, Masataka
Higashiwaki2, Yoshinao Kumagai1
1Tokyo University of Agriculture and Technology, Japan
2
National Institute of Information and Communications Technology, Japan

11:45-12:00 LEDIA6-3
Heteroepitaxial growth of ε-Ga2O3 thin films on c-plane sapphire and GaN
templates by HVPE
Mayuko Sato1
1
Tokyo University of Agriculture and Technology, Japan
12:00-13:00 LunchSESSION VII: ADVANCED PROCESSES <Room 411+412>
Chairs:Malgorzata Iwinska
UNIPRESS, Poland
Tomohiro Yamaguchi
Kogakuin University, Japan
13:00-13:30 LEDIA7-1
InvitedHigh Purity in HVPE Method as an Advantage Used for Controllable Doping of
GaN - Influence of Different Dopants on Electrical, Optical, and Structural
Properties of GaN Crystals
Malgorzata Iwinska1
1
Institute of High Pressure Physics Polish Academy of Sciences (Unipress), Poland
13:30-13:45 LEDIA7-2
AlN templates for low threading dislocation density GaN-on-Si: A solution to
boost the adoption of GaN-on-Si for LEDs and μLEDs
Fabrice Semond1, S. Rennesson1, G. Gommé1, E. Frayssinet1, P. Vennéguès1, J.
Massies1
1
Université Côte d’Azur, CRHEA-CNRS, France
13:45-14:00 LEDIA7-3
Fabrication of Polarity-Inverted GaN Heterostructure by Surface-ActivatedWafer Bonding and Silicon Removal
Takuya Onodera1, Masahiro Uemukai1, Kazuya Takahashi2, Motoaki Iwaya2, Isamu
Akasaki2, Yusuke Hayashi3, Hideto Miyake3, Maki Kushimoto4, Heajeong Cheong5,
Yoshio Honda5, Hiroshi Amano4,5, Ryuji Katayama1
1
Graduate School of Engineering, Osaka University, Japan
2
Faculty of Science and Technology, Meijo Univ., Japan
3
Graduate School of Regional Innovation Studies, Mie Univ., Japan
4
Department of Electronics, Nagoya Univ., Japan
5
Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan
14:00-14:15 LEDIA7-4
Structural recovery of Mg-ion-implanted N-polar bulk GaN substrates by hightemperature heat treatment
Sakiko Yamanobe1, Kento Yoshida1, Keita Konishi1, Shinya Takashima2, Masaharu
Edo2, Yoshinao Kumagai1
1Tokyo University of Agriculture and Technology, Japan

2

Fuji Electric Co., Ltd., Japan

14:15-14:45 LEDIA7-5
InvitedP-type Conduction of Mg-ion Implanted N-polar GaN and the Optical
Investigation
Tetsuo Narita1
1
Toyota Central R&D Labs. Inc., Japan
14:45-15:15 BreakSESSION VIII: EXTENDED WAVELENGTH DEVICES <Room 411+412>
Chairs:Bao-Ping Zhang
Xiamen University, China
Young-Joo Kim
Yonsei University, Korea
15:15-15:45 LEDIA8-1
InvitedArrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes for
Efficient Outcoupling of in-Plane Emission
Jong Kyu Kim1
1
Pohang University of Science and Technology, Korea
15:45-16:00 LEDIA8-2
Design of Transverse Quasi-Phase-Matched AlN Waveguide for Deep UVSecond Harmonic Generation
Shuhei Yamaguchi1, Masahiro Uemukai 1, Kazuya Takahashi2, Motoaki Iwaya2,
Isamu Akasaki2, Yusuke Hayashi3, Hideto Miyake3, Tomoya Yamada1, Yasufumi
Fujiwara1, Ryuji Katayama1
1
Osaka University, Japan
2
Faculty of Science and Technology, Meijo University, Japan
3
Graduate School of Regional Innovation Studies, Mie University, Japan
16:00-16:15 LEDIA8-3
Demonstration of red vertical-microcavity LEDs with Eu-doped GaN as anactive layer
Keishi Shiomi1, Tomohiro Inaba1, Jun Tatebayashi1, Yasufumi Fujiwara1
1
Osaka University, Japan
16:15-16:45 LEDIA8-4
InvitedFabrication of VCSELs Emitting in the 'Green Gap'
Bao-Ping Zhang1
1
Department of Electronic Engineering, Xiamen University, China

SESSION IX: TUTORIAL SESSION <Room 411+412>
Chair:
Yoshinao Kumagai
Tokyo University of Agriculture and Technology, Japan
16:45-17:30 LEDIA9-1
InvitedModeling and Process Design of III-nitride MOVPE
Yoshihiro Kangawa1
1
RIAM, Kyushu University, Japan
17:30-17:45 Closing Remarks

POSTER SESSION<Exhibition Hall A>
13:00-14:30 LEDIAp-1
AlGaN-based deep UV flip-chip light emitting diode with AlN/Al reflector
Tae Hoon Park1, Tae Ho Lee1, Tae Geun Kim1
1
Korea University, Korea
13:00-14:30 LEDIAp-2
The Effect of the Metallic Nano-Grating for 365nm Polarized UV-LED
Eun-Kyung Chu1, Nam-Woo Kang1, Beom-Rae Noh1, Hee-Jung Choi1, Yung-Ju
Kwon2, Kyoung-Kook Kim1
1
Dept. of Advanced Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
13:00-14:30 LEDIAp-3
Wide Band Gap Transparent Conductive Oxides of Oxide/Metal/Oxide TripleLayer Structure based on Fluorine Tin Oxide
Si-Won Kim1, Gyu-Jae Yohn1, Soae Jeong1, Beom-Rae Noh1, So-Yeon Park2,
Suyeon Son2, Kyoung-Kook Kim1,2
1
Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
13:00-14:30 LEDIAp-4
Efficient blue micro-light-emitting diodes using SiOx-based glass electrode
Kyung Rock Son1, Byeong Ryong Lee1, Tae Ho Lee1, Sang Hoon Oh1
1
School of Electrical Engineering, Korea University, Korea
13:00-14:30 LEDIAp-5
Self-Standing ZnO Nanotube/SiO2 Core-Shell Arrays for High Photon
Extraction Efficiency in III-Nitride Emitter
Hee-Jung choi1, Semi Oh2, Soo-Hyun Kang1, Kab Ha1, Eun-Kyung Chu1, Won-Seok
Lee3, Soon-Hwan Kwon3, Kyoung-Kook Kim1
1
Dept. of Advanced Convergence Technology, Korea Polytechnic University, Korea
2
Dept. of Materials Science & Technology (GIST), Korea
3
Dept. of Nano Optical Engineering, Korea
13:00-14:30 LEDIAp-6
Improved light extraction efficiency of GaN-based near ultraviolet lightemitting diodes using TiO2/HfO2 DBR electrode with Conductive Filaments
Sanghoon Oh1, Kyung Rock Son1, Tae Geun Kim1
1
School of Electrical Engineering, Korea University, Korea
13:00-14:30 LEDIAp-7
Thermal annealing effect of Ti buffer layer for the growth of GaN film
Tzu-Ting Lin1, Shih-Hao Chan1, Shao-Ze Tseng1, Sheng-Hui Chen1
1
National Central University, Taiwan

13:00-14:30 LEDIAp-8
Characterizations and Growth of ZnO: B Films Grown by Low-Pressure
Chemical Vapor Deposition on Glass Substrates
Wei-Ming Lee1, Ying-Hsiang Wang1, Chin-Yi Tsai1, Shih-Wei Feng1, Chien-Hsun
Chen2, Hsiang-Chen Wang3, Li-Wei Tu4
1
Department of Applied Physics, National University of Kaohsiung, Kaohsiung,Taiwan2
Green Energy and Environment Research Labs, Industrial Technology ResearchInstitute, Hsinchu, Taiwan
3
Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan
4Department of Physics and Center for Nanoscience and Nanotechnology, National
Sun Yat-Sen University, Kaohsiung, Taiwan
13:00-14:30 LEDIAp-9
A study on p-type Conductivity of Phosphorus-doped ZnO Thin Film using RF
Sputtering and Annealing
So-yeon Park1, Si-Won Kim2, Gyu-Jae Yohn2, Hee-Jung Choi2, Yebin Im1, KyoungKook Kim1,2
1
Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea
2
Dept. of Advanced Convergence Technology, and Research Institute of Advanced
Convergence Technology, Korea Polytechnic University, Korea
13:00-14:30 LEDIAp-10
Photoluminescence investigation of near white light-emitting zinc stannatebased phosphors
Mu-Tsun Tsai1, Chih-Chuan Chan1, Chien-Hung Lin1
1
Department of Materials Science Engineering, National Formosa University,Taiwan
13:00-14:30 LEDIAp-11
Highly efficient photonic conversion mediums based on polymer complexes
for applications in light emitting devices
Petronela Horlescu1, Corneliu S. Stan1, Simona E. Bacaita1
1
Gheorghe Asachi Technical University, Romania
13:00-14:30 LEDIAp-12
Numerical and Experimental Investigations for Deposited Nanosilver Tracks on
Polyimide Films with Heterostructures
Chia-Yen Chan1, Kuan-Cheng Shih2, Yu-Hsin Lin1
1
Instrument Technology Research Center, National Applied Research Laboratories,
Taiwan2Kingley Rubber Industrial Co., Ltd., Taiwan
13:00-14:30 LEDIAp-13
Effect of the Oxygen Concentration on Electrical Properties of GaN Crystals
Grown with the Na-flux Point Seed Method
K. Endo1, T. Yamada1, H. Kubo1, K. Murakami1, M. Imanishi1, M. Yoshimura1, and Y.

Mori1
1Osaka University
13:00-14:30 LEDIAp-14
The effect of nitrogen pressure on Threading Dislocation Density during the
Na-flux GaN Growth using Point Seed Technique
Yuki Sawada1, Takumi Yamada1, Kosuke Murakami1, Keisuke Kakinouchi1, Kosuke
Nakamura1, Kanako Okumura1, Tomoko Kitamura1, Yasuhiro Unoki1, Masayuki
Imanishi1, Masashi Yoshimura1, and Yusuke Mori1
1
Grad. Sch. of Eng., Osaka Univ.
13:00-14:30 LEDIAp-15
Reduction of Li impurity in the freestanding GaN substrate fabricated using thesapphire dissolution technique in the Na-flux growth
Takumi Yamada1, Masayuki Imanishi1, Kosuke Murakami1, Kosuke Nakamura1,
Mamoru Imade1, Masashi Yoshimura1, and Yusuke Mori1
1
Grad. Sch. of Eng., Osaka Univ.
13:00-14:30 LEDIAp-16
Sol-Gel-Derived Hole-Transporting NiOx Films for Perovskite CsPbBr3 Green
Light-Emitting Diodes
Chun-Yuan Huang1, Shyh-Jer Huang2, Yi-Hsiu Hsieh1
1National Taitung University, Taiwan
2
National Cheng Kung University, Taiwan
13:00-14:30 LEDIAp-17
Optically Readable GaN-based Micro-LEDs Using NiO-based ReRAM as an NType Contact layer for Micro-LED Display
Byeong Ryong Lee1, Ju Hyun Park1, Hyun Tae Kim1, Kyung Rock Son1, Tae Geun
Kim1
1
Korea University, Korea
13:00-14:30 LEDIAp-18
Optical and Device Characteristics of InGaN/GaN Light Emitting Diodes with
Multilayer Graphene as Transparent and Current Spreading Electrodes
Ying-Hsiang Wang1, Wei-Ming Lee1, Shih-Wei Feng1, Hsiang-Chen Wang2
1
Department of Applied Physics, National University of Kaohsiung, Taiwan
2
Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan
13:00-14:30 LEDIAp-19
High Efficiency UV-Emitters with Micro-Hole Pattern and ITO Nanoparticles
Beom-Rae Noh1, Joon-Sung Kwon1, Nam-Woo Kang1, Eun-Kyung Chu1, Si-Won
Kim1, Kwang-Gyun Im2, Kyoung-Kook Kim1
1
Department of Advanced Convergence Technology, Korea
2
Department of Nano Optical Engineering, Korea

PRESENTATION GUIDELINESTIME ALOTTED FOR PRESENTATION:
INVITED TALK:CONTRIBUTED ORAL TALK:POSTER PRESENTATION:

25-minute talk + 5-minute discussion
10-minute talk + 5-minute discussion
90-minute poster presentation+ 3-minute short presentation

POSTER PRESENTATIONS:The size of the poster board is 180 cm in a width and 210 cm in a height. We
recommend the authors to use A0 size (84.1 cm in a width, 118.9 cm in a height)
paper/cloth to prepare their posters.
On the poster board, only the paper number will be labeled, so that the paper title,
author names, and affiliations should be prepared by the authors. Necessary tools for
pinning the posters will be provided.
Before the poster session, 3 minutes short oral presentation will be planned. A PC
video projector will be available. Please prepare your presentation in Adobe PDF fileformat. Submit the electrical PDF file through the online system by April 20, 2018.
*Notice: The authors of the short presentation must be finished their talk within 3
minutes and the presentation must be given by using PC provided at the conferenceroom.

LOCATION OF CONFERENCE SITE
FROM OVERSEAThe LEDIA ’18 takes place at Pacifico Yokohama, Yokohama city, Kanagawa
prefecture, JAPAN. Yokohama city, the center of Kanagawa prefecture is located in
the south of Tokyo. Pacifico Yokohama is conveniently located about 30 minutes from
Tokyo International Airport (Haneda) and about 100 minutes from Narita International
Airport. Direct Airport Limousine to Pacifico Yokohama is available.
For more information, please visit the following URL:
http://www.pacifico.co.jp/english/destination/access/tabid/502/Default.aspx

Access from the nearest stations
1. Minato Mirai Line:
2. JR or Subway Line:
3. Sea Bass (boat):

3-minute walk from “Minato Mirai Station”
12-minute walk, 7 minutes by bus or 5 minutes by taxi
from “Sakuragicho Station”
10 minutes from “Yokohama Station”

Pacifico Yokohama
1-1-1 Minato Mirai, Nishi-ku, Yokohama 220-0012, Japan
http://www.pacifico.co.jp/english/