Euvis
LD162DZ_G0 Datasheet
Email: Sales@euvis.com
Tel: (818) 879-7980 Sales Department
Fax: (818) 879-9696

Document name: LD162DZ_DS_G0
Release date: 02/27/2004
Related document: LD162DZ_DS_5G4 @ 01/09/2004
Version: G0
Revision: (none)

EuvisLaser Diode Driver, LD162DZ

OC-192/STM-64/10GbE
LD162DZ_G0
Differential Laser Diode Driver
32-Pin QFN package
PRODUCT DESCRIPTION
The LD162DZ is a low-power high-speed laser diode driver designed for fiber optic
communication systems such as SONET OC-192, SDH STM-64 and 10 Giga-Bit
Ethernet. This chip can deliver a maximum modulation current of 80 mA to a 25- Ω loadand maximum DC bias current of 80 mA to a laser diode.

KEY FEATURES••
•
•••
•
•

Differential outputs with 50 Ω back terminations
0~80 mA variable RF differential modulation current at external 25- Ω load
0~80 mA variable DC bias current at laser diode (through a RF choke)
Duty-Cycle control unit
Output Enable Control
Modulation Current and Bias Current Monitors
On-chip current sink for laser bias
Single +5 V power supply with current consumption of 110 mA (not including RFmodulation current and DC bias current)

BLOCK DIAGRAM
OCOEIP/IN 2DUTYRF SwingControl

DutyCycle
Control

DriverRFIMOPON

DC BiasControl

BXBM

BC

Ver. G0, 2/27/04

2

EuvisLaser Diode Driver, LD162DZ

ELECTRICAL SPECIFICATIONSVCC = +5 V and RL = 25 Ω (simulating laser diode load with a damping resistor)

Parameter
Operating Temperature1

Input Data Level

2

Input Return LossMin

TypicalMax

Unit

To

−402585oVdata

75150

2000mV

RLI

Differential Modulation Current
at External 25 Ω
DC Bias Current

8CdB

IRF

080mA

IDC

080mA

3tr

40ps

3tf

40ps

Ioos

6mA

Ious

6mA

τj

2ps, rms

Output Rise Time
Output Fall Time

Symbol4

Output Overshoot4

Output Undershoot
Jitter Width

5Current Consumption

IEE

Power Supply

VCC

110
4.7
1mA

55.5

V

AC-coupled single-ended or differential input
2
DC to 10 GHz
320~80% of full swing
4
at IRF=60 mA
5excluding RF modulation current

tr/tf
IDC

0V

Ioos

80%IRF

Vdata/Vck
20%

Ious

Symbolic interpretationVer. G0, 2/27/04

3EuvisLaser Diode Driver, LD162DZ

ABSOLUTE MAXIMUM RATINGS – WITH +5 V SUPPLY VOLTAGE
Parameter

SymbolTypicalUnit

TA− 40~85oCC

Ambient Temperature
Storage Temperature

TSTR− 65~150o

Power Supply Voltage

VCC

8V

TYPICAL OPERATION CONDITIONS – WITH +5 V SUPPLY VOLTAGE
Symbol

Min.

Typ.

Max.

Unit

Supply Voltage

VCC

4.75

55.5V

Supply Current

ICC

110mA

Input Data Level (Single -Ended)

VDATA

150mVP P

Parameter

1Bias Control, IBX=0~100 mA

1.23.5V

1.83V0.10.78

V

0.32

0.63

VVEE

VCCVBC

1Bias Control, IBX=20~80 mA

2

RF Modulation Control, IRF=0~80 mA
RF Modulation Control, IRF=20~60 mA

OC

Output Enable, VCC: Enable; VEE : Disable

OE

Output Enable Threshold

OETH

Duty Cycle Control

DUTY

0.5

2.5

V

LD Bias MonitoringIBM

03.6mARF Modulation Current Monitoring

RFIM

01

V

VCSO Modulation Current Monitoring

VCSO

01.8

V

2

1.3

Input Coupling

AC Coupled

Output Coupling

AC Coupled
1Ver. G0, 2/27/04

VWith 1-KΩ in-series resistor at BC
2
With 25-Ω load4Euvis

Laser Diode Driver, LD162DZTERMINAL DESCRIPTION
NameFunction

I/OSignal

VCCVEEPower SupplyGroundIP

Data Input +I

RFIN

Data Input -I

RF

DUTY

Duty Cycle Control

I

DCOE

RF Modulation Enable

I

DC

OC

RF Modulation Current Control

IDC

BC

LD DC Bias Control

IDC

BX

LD DC Bias Current Input

IDC

RFIM

RF Modulation Current Monitor

ODCBMLD DC Bias Current Monitor

I

DCVCSI

Input Stage VCS Generator Bypass

O

DC

VCSO

Output Stage VCS Generator Bypass/Current Monitoring

O

DCOP

Modulated Output +O

RFONModulated Output −O

RFVer. G0, 2/27/04

DCDC

5EuvisLaser Diode Driver, LD162DZ

PACKAGE DIMENSION AND PIN ARRANGEMENTS• Unit: mm• Package Format: 32-pin QFN• Package Size: 5 mm x 5 mm
• Pin Pitch: 0.5 mm

3231302928272625

VCC

DUTY

VCC

VCC

BC

VEE

VCC

BM

Top View

01

VEE Pin1

BX

2402

VCC

VCC

2303

INON

2204

VCC

VCC

2105

IP

OP

2006

VCC

VCC

1907

VCSI

VCSO

1808

VCC

VCC

17EUVIS

VCC

OCVCC

1314151611VEE

VCC

10RFIMOE

12VCC

09

LD162DZ

5Metal
Lead0.025

SeatingPlane
0.553.62

3.62

0.40.25

Bottom View
Ver. G0, 2/27/04

0.9

Side View
6EuvisLaser Diode Driver, LD162DZ

DC EQUIVALENT CIRCUIT

VCSI
OE

VCSO

5k
5k

OC

RFIM
10 k

2k

VEE
50

IP/IN

VEE

VCC

50

DutyCycle
Control

2OP
ON

VEE

BX

VCC
7k

DUTY
4k

VEE

BC

Ver. G0, 2/27/04

BM

1k
3k
VEE

VEE

7

EuvisLaser Diode Driver, LD162DZ

DC CONTROL CHARACTERISTICS
The modulation current IRF can be controlled by applying the control voltage at pin OCand monitored by either the voltage at pin RFIM or the voltage at VCSO. The
relationship of the modulation current IRF delivered to a 25- Ω differential load versus
control voltage VO C and the corresponding monitoring voltages reading are shown as thefollowing figures.
150

2VCSO

125

Monitor, (V)1.5

IRF , (mA)

100
75
50

1VRFIM0.5
250000.5

11.5

0

2

20

VOC, (V)

40

60

80

100

120

IRF , (mA)

Similarly, if the on-chip current source is used to bias the laser diode, the DC bias current
IBX can be controlled by the control voltage at pin BC and monitored by the voltage atpin BM. The relationship of the DC bias current delivered to a laser diode with a 25- Ω
turn-on resistance versus DC bias control voltage VBC is shown as the following figures.
In the figures, the turn-on voltage of the laser diode is 1.2 volt. The DC bias current
monitoring feature can be accomplished by sensing the DC monitoring current IBM
flowing into the chip as shown in the next section. The ratio of DC bias current over DC
monitoring current IBX/IBM is about 50. Due to the on-chip protection circuits, there areoffset currents of 500 uA and 300 uA for IBX and IBM respectively.
100IBX, (mA)

806040200012345

VBC , (V)Ver. G0, 2/27/04

8EuvisLaser Diode Driver, LD162DZ

TYPICAL CONNECTION
Duty Cycle
Control

Laser Diode
Bias Control

R2R1

Laser Diode
Bias Current Monitor

VCC

R BM1
DC Bias Current
Monitoring Orientation

C5VEE
V CC

Laser Diode
Bias Current Orientation

BM

VCC

VEE

BC

VCC

VCC

DUTY

VCC

V CCLCPin1BX

VCC
C7

VCC

V CCC6VCC

L D2

CB1T1
From MUX

EUVIS

IN
VCC

ONRDAMP
Laser
Diode

VCC

CB2IP
VCC

OutputEnable Control

VCC

C4VCSO
C3VCC
Alternative
Laser Diode
Modulation Current Monitor

VCC

OC

VCC

RFIM

VCC
VEE

VCC
VCC

C2L D1VCSIVCC

C1TOSA

T3OP

LD162DZ
OE

T2

CB3T4

VCC

VCC

Laser Diode
Modulation Current Monitor

Laser Diode
Modulation Current Control

Notes:
VCC’s are connected to +5 V
VEE’s are connected to power supply ground
Center Pad of the package is connected to Vcc, +5V
T1 ~T4 : 50- Ω transmission lines
C1 , C3 , C5 and C6 : 100-nF surface mount capacitors
C2 and C4 : 100-pF high-quality capacitors at input and output*
C7 : a 10-uF capacitor on power trace
LC: RF choke for laser diode DC bias
LD1 and LD2: RF chokes for driver outputs
CB1 ~CB3 : 100-nF AC-coupling capacitors
R1 , R2 and RBM1: 1-kΩ resistors
RDAMP : 15~25 Ω damping resistor*

Should be located close to the chip

Ver. G0, 2/27/04

9

EuvisLaser Diode Driver, LD162DZ

Euvis
Ordering Information:Email to: Sales@euvis.com
Or call: (818) 879-7980 Sales Department
Or fax: (818) 879-9696
The information contained in this document is based on preliminary product test results. Characteristic
data and other specifications are subject to change without notice. Customers are advised to confirm
information in this advanced datasheet prior to using this information or placing the order.
Euvis Inc. does not assume any liability arising from the application or use of any product or circuitdescribed herein, neither does it convey any license under its patents or any other rights.

Ver. G0, 2/27/04

10