DPS2014 TIMETABLE(tentative)
November 27

November 28

8:00

8:00

8:10
8:20
8:30
8:40
8:50

8:10
8:20
8:30
8:40
8:50

Registration

Registration

9:00 Opening Remark (Hayashi) Young Award, NIshizawa Award (Nakano)

9:00 E-1 <Invited>

9:10 A-1 <Invited>
9:20 Dr. Itaru Yanagi (Hitachi Ltd.)
9:30 "A novel method for fabricating nanopores with diameters of sub-1 nm to 3 nm"
9:40 A-2 <Invited>
9:50 Dr. Meng-Jiy Wang (National Taiwan University of Science and Technology)

9:10 Dr. Yasuaki Ishikawa (NAIST)
9:20 "ALD's oxidant effect on characteristics as an oxide dielectric"
9:30 E-2 <Invited>
9:40 Dr. Paul Poodt (TNO/Holst Centre)
9:50 "Spatial Atomic Layer Deposition for large-area and flexible electronics"

10:00 "Plasma surface modifications for modulating drug release and cell proliferation"
10:10 A-3 <Invited>
10:20 Dr. Rui Zhang (Univ. of Tokyo)
10:30 "MOS interface passivation of Ge MOSFETs by plasma post oxidation"
10:40
Break
10:50 B-1 M. Matsui,

11:00"Analysis of surface reaction layers formed by Si3N4 etching by pulsed microwave plasma"

11:10 B-2 T. Sasaki,
11:20 "Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma"
11:30 B-3 Hu Li,
11:40 "Etching characteristics of transparent conducting oxides by methane-based plasmas"
11:50 B-4 K. Karahashi,

12:00
12:10
12:20
12:30
12:40
12:50

Session APlasma
Processes forNew
Applications

10:10
10:20
10:30
10:40
10:50

E-3 M. Noma,"Effects of ion energy on surface and mechanical properties of BN films formed by a reactive
plasma-assisted coating method"
E-4 S. Nunomura,"In-situ monitoring of carrier transport in semiconductor active layer under plasma processing"E-5 Y. Setsuhara,"Process Controllability of ICP-Enhanced Reactive Sputter Deposition for Low-Temperature
Formation of IGZO TFT"

11:00
Session B
Etching andSurface
Reaction"Etching reactions of magnetic materials by CO cluster beams"
B-5 K. Eriguchi,"A model for plasma-induced latent defects in three-dimensional structures and its application
to parameter variation analysis of FinFETs"

13:00

10:00

Break

11:10
11:20
11:30
11:40
11:50

12:00 Poster
12:10
12:20
12:30
12:40
12:50

13:00

Lunch13:10
13:20
13:30
13:40 C-1 <Invited>
13:50 Dr. Keiji Nakayama (Institute of Mesotechnology)

13:10
13:20
13:30
13:40
13:50 F-1 T. Ikeda,

14:00 "Atmospheric pressure plasma generated in a gap of dry and oil lubricated sliding

14:00 "Experimental evidence of layout-dependent low-k damage during plasma processing -Role of

14:10 C-2 <Invited>
14:20 Dr. Laxminarayan Raja (Univ. of Texas at Austin)
14:30 "Computational simulations of streamer discharges for reactive plasma applications at atmospheric pressures"
14:40 C-3 A. Pandey,
14:50 "Time-resolved curling-probe measurement of electron density in pulsed discharge"

15:00

C-4 N. Kuboi,"Prediction of Plasma-Induced Damage Distribution during Silicon Nitride Etching Using
Advanced 3D Voxel Model"
C-5 T. Kawanabe,"Controlling ashing rate distribution by introducing additional gas flow in a 450-mm-wafer
ashing reactor"

Session CPlasma
MonitoringandSimulation

Lunch

14:10 F-2 M. Fukasawa,
14:20 "Systematic comparison of various analytical techniques for evaluating plasma-induced damage
T. Iwai,
14:30 F-3
"Low-temperature microwave repairing for plasma-induced local defect structures near Si
substratesurface"
14:40
14:50 F-4 Z. Liu,

15:00

"Damage-formations in GaN processed at high temperatures"

16:00 D-1 <Invited>

16:00

Dr. Shahid Rauf (Applied Materials Inc.)

16:10 Dr. Hironobu Sato (EIDEC)
16:20 "Sub-10nm directed self-assembly lithography using high chi block copolymers"
L. Azarnouche,
16:30 D-2
"Interactions between plasma and organosilicon polymers for directed self-assembly patterning
16:40 applications"
16:50 D-3 Yan Zhang,

16:10 "Atomic precision etch for semiconductor manufacturing"
16:20 G-2 <Invited>
16:30 Dr. Geun Young Yeom (Sungkyunkwan University)
16:40 "Application of atomic layer etching for Si-based devices"
16:50 G-3 A. Agarwal,

15:10
15:20
15:30
15:40
15:50

17:00
17:10
17:20
17:30
17:40
17:50

18:00

19:00
19:10
19:20
19:30
19:40
19:50

20:00
20:10
20:20
20:30

Session D
Dry Etching
Technologyfor
Advanced
Patterning

17:00

Banquet"Modeling of Low Electron Temperature Plasmas to Enable Atomic Layer Etching"

17:10 G-4 T. Lill,
17:20 "Plasma-Enhanced Adsorption for Atomic Layer Etch of Silicon"
17:30 Closing Remark (Okumura)
17:40
17:50

18:00

18:10
18:20
18:30
18:40
18:50

Session FPlasma
InducedDamage

T. Shigetoshi,
15:10 F-5
"Control of Si-SiO2 Interface Defects Generation during Thin Dielectric Film Etching Using
15:20 CHxFy/Ar/O2 Plasma"
15:30
Break
15:40
15:50 G-1 <Invited>

Break"Surface Modifications of Photoresist Polymers under Photon Irradiations Emitted from HBr
Plasma"D-4 J.H. Liao,"Etch Challenges for Metal Hard Mask Open for 14 nm Node"D-5 O. Ros,
"Cure free plasma processes for improved gate patterning and LWR for 14nm FDSOI
technologies"

Session E
CVD/PVD/ALD

Session G
AtomicLayer
Etching