The 12th Japan-Korea Conference
on Ferroelectrics
JKC-FE12Program

August 5th-8th,2018
Nara Hotel, Japan

Nara Hotel (Conference Site)
1096 Takabatake-cho, Nara 630-8301, Japan

Main
Building
1F
Main Dining
Room“MIKASA”
HotelShop

New
Building
5F

Front
Desk

Entrance

Escalator

Foyer

Down
Elevator
Terrace Garden
Japanese Restaurant“HANAGIKU”

New
Building
4F

Venue Layout(Downstairs)
Escalator“WAKAKUSA”(Poster)Foyer

Elevator“YAMATO”(Oral/ Banquet)(Poster/Exhibits)

〇 Hotel Nikko Nara (Welcome Reception) is directly connected to JR Nara station
8-1 Sanjo-hommachi Nara-shi Nara 630-8122〇 Hotel Hanakomichi (Courtesy Lodging for Students)
23 Konishi-machi, Nara-shi, Nara 630-8226
From Kintetsu Nara Station Exit 4:

1 min. walk to the south

To Nara Hotel

12 min. walk using shortcut

Excursion
Special Daibutsu Tour (TODAN 登壇) at Todaiji

As a courtesy of Todaiji, special Daibutsu tour can be offered for the participants. Evenfor Japanese, it is quite rare case to get experience of TODAN. We can come close toDaibutsu and see from above.
Venue: Todaiji Nandaimon at 8:50 on 8th Aug.
#1 bus from Hotel Nikko Nara at 8:15
#2 and #3 buses from Nara chamber of commerce
and industry at 8:15 (nearest exit of Kintetsu Narastation is #1)

Nara chamberof commerce
and industry

CVSKintesu
Nara
Station

Court

CVS

HotelKasuga
Hotel#2 and #3 buses forDaibutsu tour
depart from here

Timetable

Aug.05th(Sun.)

17:00

～

19:00

Registration/ Welcome Reception(Hotel Nikko Nara)

Aug.06th

9：00

～

9：30

Registration

9：30

～

9：45

Opening Remarks

9：45

～

10：30

Plenary 1 (Prof. Hideo Hosono)

10：30

～

10：45

Coffee Break

10：45～12：00Fundamentals (Materials Science)

12：00～13：30

Lunch

13：30

～15：00

Poster Session

15：00

～

17：30

Fundamentals (Physics)

8：30

～

9：00

Registration

9：00

～

9：45

Plenary 2 (Prof. Tae Won Noh)

9：45

～

10：15

Thin Films

10：15

～

10：30

Coffee Break

10：30

～

12：30

Special Talks -Ferroelectrics for loT Society-

12：30

～

14：00

Lunch (Committee Meeting)

14：00

～

16：00

Applications 1

16：00

～

16：15

Coffee Break

16：15

～

18：00

Applications 2

18:00

～

18:15

Photo Session

18:15

～

19:00

Free Time

19:00～21:00Banquet (Nata hotel YAMATO)

9：00

～

11：00

TODAN, Special Daibutsu Tour (Todaiji)

11：00

～

13：00

Fundamentals (Structure, Crystallographic)

13：00

～

13：10

Closing Remarks(Mon.)

Aug.07th(Tue.)

Aug.08th(Wed.)

After closing
Shuttle bus to KIX will depart at 13:20
Shuttle bus to JR and Kintetsu Stations will depart at 13:40

Program Outline
Time

Aug.5th(Sun.)

Aug.6th(Mon.)

8:30

Aug.7th(Tue.)

Aug.8th(Wed.)

Time
8:30

Registration

9:00

9:00
Registration

PL-02

T. W. Noh

Opening Remarks
10:00

PL-01

H. Hosono

I-07

H. N. LeeSpecial
Daibutsu Tour

10:00Coffee BreakCoffee Break
I-01

11:00

I-08

K. Hosokawa

I-09

A. Jiang

I-18

D. Y. Cho

I-10

Y. Oku

I-19

S. Aoyagi

I-11

D. S. Jeong

I-20

S. Hong

I-21

Y. KimJ. KanoI-02

Y. S. Oh

O-01

T. Hoshina

11:00

12:00

12:00

Lunch
13:00

Closing Remarks

Lunch

14:00

14:00
Poster Session

I-12

K. J. Lee

I-13

I. Matsuda

15:00

15:00
I-03

Y. Okimoto

I-14

S. C. Chae

I-04

S. Han

I-15

H. Nagata

I-05

N. Ogawa

16:00

17:00
Registration

I-06

D. SuhO-02

H. J. JinO-03

S. Maeda

WelcomeReception
18:00

Coffee Break
I-16

T. Yanagitani

I-17

M. Kurosawa

O-04

H. Park

O-05

K. Takada

O-06

M. H. Park

Photo Session(Hotel Nikko Nara)
19:00

13:00

Night Session(Free social eventfor students)

16:00

17:00

18:00

Free Time
19:00
Banquet (~21:00)

ProgramAug. 5th (Sun)Registration & Welcome Reception
17:00 – 19:00

Hotel Nikko Nara (FUJI)

Aug. 6th (Mon)
Registration
9:00 –Nara HotelOpening
9:30 – 9:45

Norifumi Fujimura (Osaka Prefecture University)
Cheol Seong Hwang (Seoul National University)
Masanori Okuyama (Osaka University)

Plenary 1 (Chair: Norifumi Fujimura, Osaka Pref. Univ.)
9:45 – 10:30

Pl-01

Hideo Hosono (Tokyo Institute of Technology)
Novel transparent semiconductors: design concept and examples

Coffee Break
10:30 – 10:45
Fundamentals (Materials Science) (Chair: Yunsang Lee, Soongsil Univ., Hiroki Taniguchi, Nagoya Univ.)
10:45 – 11:15

I-01

Jun Kano (Okayama University)
Bent core level atomic orbitals in BaTiO3

11:15 – 11:45

I-02

Yoon Seok Oh (Ulsan National Institute of Science and Technology)
Geometrically induced hybrid improper ferroelectricity and multiferroicity in A3B2O7
Ruddlesden-Popper compounds

11:45 – 12:00

O-01

Takuya Hoshina (Tokyo Institute of Technology)
Crystal structure and ferroelectric phase transition of barium titanium oxynitrideLunch
12:00 – 13:30

Restraint Half-time (10 min walk)

Poster Session
13:30 – 15:00

List of poster presentation is posted after oral presentation program

Fundamentals (Physics) (Chair: Young-Han Shin, Univ. of Ulsan, Sumio Ishihara, Tohoku Univ.)
15:00 – 15:30

I-03

Yoichi Okimoto (Tokyo Institute of Technology)
Ultrafast photo-control of ferroelectric cocrystals

15:30 – 16:00

I-04

Seungwu Han (Seoul National University)

Classical neural network potential learning DFT results
16:00 – 16:30

I-05

Naoki Ogawa (RIKEN CEMS)
Topological shift current in ferroelectrics

16:30 – 17:00

I-06

Dongseok Suh (Sungkyunkwan University)
Graphene transistor as a noninvasive probe monitoring oxygen vacancies in SrTiO3

17:00 – 17:15

O-02

Hye-Jin Jin (Ewha Womans University)
Vortex formation and its dynamics in pseudo-triangular ferroelectric lattice

17:15 – 17:30

O-03

Shinsaku Maeda (Nagoya Institute of Technology)
PFM observation in the vicinity of domain walls for (Na,K)NbO3 ceramics

Night Session (Free social event for students)
18:30 – 20:30

WESTERN JunAug. 7th (Tue)Plenary 2 (Chair: Cheol Seong Hwang, Seoul National Univ)
9:00 – 9:45

Pl-02

Tae Won Noh (Seoul National University)
Flexoelectricity: next frontier in oxides?

Thin Films (Chair: Hajime Nagata, Tokyo Univ. of Sci.)
9:45 – 10:15

I-07

Ho Nyung Lee (Oak Ridge National Laboratory)
Novel multiferroics made by strain- A synthesis science driven approach

Coffee Break
10:15 – 10:30
Special Talks -Ferroelectrics for IoT Society(Chair: Sang Don Bu, Chonbuk National Univ., Eisuke Tokumitsu, JAIST)
10:30 – 11:00

I-08

Kohji Hosokawa (IBM Japan Ltd. )An analog accelerator chip for AI computing

11:00 – 11:30

I-09

Anquan Jiang (Fudan University)
High-density Ferroelectric domain-wall resistance switching random access memory

11:30 – 12:00

I-10

Yoshiaki Oku (ROHM Co., Ltd.)
Application of PZT thin film devices to realize IoT society

12:00 – 12:30

I-11

Doo SeokJeong (Hanyang University)
Nanoscale resistance switches for deep learning acceleration

Lunch
12:30 – 14:00

Lunch box

Applications 1 (Chair: Yunseok Kim, Sungkyunkwan Univ., Yuji Noguchi, Univ. of Tokyo)
14:00 – 14:30

I-12

Keon Jae Lee (KAIST)
Self-powered flexible electronics beyond thermal limits

14:30 – 15:00

I-13

Isao Matsuda (Taiyo Yuden Co., Ltd.)
Application and development of a piezoelectric sensing solution system

15:00 – 15:30

I-14

Seung Chul Chae (Seoul National University)
Ferroelectricity in HfO2 for the single transistor based memory device

15:30 – 16:00

I-15

Hajime Nagata (Tokyo University of Science)
Quenching effects for depolarization temperature and their electrical properties on(Bi1/2Na1/2)TiO3-based lead-free ferroelectric ceramics

Coffee Break
16:00 – 16:15

Applications 2 (Chair: Keon Jae Lee, KAIST, Hironori Fujisawa, Univ. of Hyogo)
16:15 – 16:45

I-16

Takahiko Yanagitani (Waseda University)
A method for extracting GHz electromechanical coupling coefficient from piezoelectric
film/substrate structure without removing substrate

16:45 – 17:15

I-17

Minoru Kurosawa (Tokyo Institute of Technology)
Mechanical vibration conversion to RF power using piezoelectric transducers

17:15 – 17:30

O-04

Hyeon Woo Park (Seoul National University)
Study on transient NC effect in ferroelectric thin films by phase field simulation approach

17:30 – 17:45

O-05

Kenshi Takada (Osaka Prefecture University)
Investigation of physical nature of transient negative capacitance emerged in ferroelectric-gate
FETs

17:45 – 18:00

O-06

Min Hyuk Park (Pusan National University)
Research on HfO2 in Namlab.

Photo Session
18:00 – 18:15

Entrance of Nara HotelFree Time
18:15 – 19:00
Banquet19:00 – 21:00

Nara Hotel (YAMATO)
19:30 – 20:00

Young Scientist Session

Aug. 8th (Wed)Special Daibutsu Tour
9:00 – 11:00

TODAN at TodaijiFundamentals (Structure, Crystallographic)(Chair: Woo Seok Choi, Sungkyunkwan Univ., Chikako Moriyoshi, Hiroshima Univ.)
11:00 – 11:30

I-18

Deok-Yong Cho (Chonbuk National University)
Local structures of active interfaces in some dielectrics-metal contacts

11:30 – 12:00

I-19

Shinobu Aoyagi (Nagoya City University)
Transient crystal structure of piezoelectric oscillators vibrating under alternating electric field

12:00 – 12:30

I-20

Seungbum Hong (KAIST)
Visualization of emerging phenomena: materials imaging initiative

12:30 – 13:00

I-21

Yunseok Kim (Sungkyunkwan University)
Evaluation of ferroelectricity at the nanoscale

Closing Remarks
13:00 – 13:10

Norifumi Fujimura (Osaka Prefecture University)
Cheol Seong Hwang (Seoul National University)

Poster presentation ― 6th Aug.(Mon)13:30～15:00
NumberPresenter

P-01

Tomohiro Abe

Electron density study on BiFeO3-type oxides using(Hiroshima Univ.)

synchrotron radiation X-ray diffraction

P-02
P-03

Title

Yukio Sato

An attempt of high precision electron microscopy observation of(Kyushu Univ.)

a dielectric crystal under external electric fieldYuya Ouchi

Single crystal X-ray diffraction investigation for Ba0.93Sr0.07Al2O4(Osaka Prefecture Univ.)

P-04
P-05

QingZhaoElectronic charge order in double perovskite BaBiO3 visualized(Hiroshima Univ.)

by synchrotron radiation powder diffraction

Yuki Nakahira

Structural phase transition of improper ferroelectric BaAl2O4(Hiroshima Univ.)

P-06
P-07
P-08

Hiroki Taniguchi

Ferroelectricity and functional dielectric properties in Bi2SiO5-(Nagoya Univ.)

based compounds

Shuhei Tsugita

Sublattice polarization of PbZrO3 in antiferroelectric phase by(Hiroshima Univ.)

SXRD

Hiroko Yokota

Direct observations of polarity at the domain boundaries(Chiba Unv.)

P-09

Shigeo Mori
(Osaka Prefecture Univ.)

P-10
P-11

Eiichi Oishi

P-13

improper ferroelectric materials
Circularly-polarized Raman spectroscopy on NaClO3 single(Ritsumeikan Univ.)

crystals with opposite chiralities

Yuji Matsushita

Characterization of electrocaloric temperature changes in(Osaka Prefecture Univ.)

P-12

Observation of charged domain walls and defect structures inP(VDF-TrFE) thin films

Takahiro Okada

Transient thermal grating spectroscopy for thermal waves in(Ritsumeikan Univ.)

quantum- paraelectric SrTiO3Taro Aso(Ritsumeikan Univ.)

Anomalies of acoustic phonon and central peak in ordered anddisordered Pb(Sc1/2Ta1/2)O3 ceramics probed by Brillouinscattering

P-14

Yasuhiro Fujii(Ritsumeikan Univ.)

P-15

Yuto Yokoi(Hiroshima Univ.)

P-16

Kotaro Abe(Ritsumeikan Univ.)

P-17

Shota Noda
(Hiroshima Univ.)

Polarization-angle-resolved Raman analysis on local symmetry in
0.73PMN-0.27PT single crystals
Electric field induced phase transition of PMN-PT by single
crystal synchrotron radiation X-ray diffraction
External electric-Field effect on the power-law quasi-elastic
light-scattering spectra of PZN-PT
Anharmonic

thermalvibration

inrelaxor

ferroelectricPb(Mg1/3Nb2/3)O3 by high energy synchrotron radiation X-ray
diffraction

P-18

Katsuya Shiratori

Polarization-angle-resolved Raman spectroscopy on(Ritsumeikan Univ.)

Pb(Zn1/3Nb2/3)O3-8%PbTiO3 under external electric fieldNumberPresenter

Title

P-19

Junpei Tanaka

Electric and magnetic properties of multiferroic YbFe2O4 thin

(Osaka Prefecture Univ.)

P-20

Badari Narayana

films with non-stoichiometric composition
Characterization of multiferroic AlxFe2-xO3 epitaxial thin films

Aroor Rao(Tokyo Institute of Tec.)

P-21

June Hyuk Lee(KAERI)

P-22

Kohei Miura(Osaka Prefecture Univ.)

P-23
P-24
P-25

Improvement of HANARO polarized neutron reflectometer for
multiferroic oxides
Photo-induced phenomena of strongly correlated ferroelectric
YMnO3 epitaxial films

Seiya Kato

Dielectric responses of BaTiO3 and Pb(Zr, Ti)O3 under electric(Hiroshima Univ.)

field studied by time-resolved x-ray absorption spectroscopy

Sanggyun Byeon

Dielectric properties and structural distortion of BaTiO3 surface(Sungkyunkwan Univ.)

by first principles study

Muhammad Sheeraz

Enhancement of ferroelectric polarization by sulfurization(Univ. of Ulsan)

P-26
P-27

Nguyen Xuan Duong

Oxygen-vacancy-mediated polymorphic phase transition in Ni(Univ. of Ulsan)

doped BaTiO3 ceramics

Taewon Min

A first-principles study of the LaAlO3/SrTiO3 (111) interface(Pusan National Univ.)

P-28

Gijae Kang

Ab-initio study on charge trapping K centers in amorphous Si3N4(Seoul National Univ.)

P-29

Kyeongpung Lee

First-principles study on Al doping in SrTiO3(Seoul National Univ.)

P-30

Dohyung Song(Sungkyunkwan Univ.)

P-31

Se-Hun Kim

First principles study on band structure modification of CdSequantum dots
Quest for hydrogen environments in hydrogen-bonded systems(Jeju National Univ.)

P-32
P-33

Genta Kawamura

Structure fluctuation of stuffed aluminate sodalites(Hiroshima Univ.)

Ca8[AlO2]12(SO4)2 and Sr8[AlO2]12(SO4)2 in cubic phase

Hayato Hirano

Microstructures and their relevance to photoluminescence(Osaka Prefecture Univ.)

P-34

Dongheon Lee(Seoul National Univ.)

P-35
P-36

Koki Hagura

in Sr1-x-yEuxCayAl2O4
Atomic and electronic structures of Al-, Zn-, and Ga-doped
Ge2Sb2Te5Structure fluctuation of halogen-type layered double hydroxides(Hiroshima Univ.)

by synchrotron radiation X-ray diffraction

Hye Jung Kim

Surface effects in dipolar hydrofluorinated graphene multilayers(Univ. of Ulsan)

P-37

Hisashi Ichimiya(Osaka Prefecture Univ.)

Spontaneous pattern-formation toward effective doping in 2Dmaterials

NumberPresenter

P-38

Akito Fukui(Osaka Prefecture Univ.)

P-39

MyoungPyo Chun(KICET)

P-40
P-41
P-42

Synthesis and characterization of a molecular dopant for 2D
semiconducting materials
Characterization of BN nanofibers fabricated by electrospinning
methodJin San Choi

Influence of Ni charge valency on the metal-to-insulator(Univ. of Ulsan)

transition in epitaxial nickelate films

Yunsang Lee

Surface-direction dependence of the oxygen vacancy formation(Soongsil Univ.)in SrTiO3 single crystals

Sungmin Woo

Enhanced magnetic and thermoelectric properties in epitaxial(Sungkyunkwan Univ.)

P-43

Title

Chang Jae Rohpolycrystalline SrRuO3 thin film
Non-centrosymmetric phase of SrRuO3 thin films(GIST)

P-44

Jeong Rae Kim(Seoul National Univ.)

P-45

Sang Mo Yang
(Sookmyung Womens Univ.)

Comparative study on pulsed laser deposition of CaTiO3 thinfilms from single and dual targets
Scanning probe microscopy investigation of the mixed
electrochemical-ferroelectric states in ultrathin BaTiO3 grownon silicon

P-46
P-47

Tsubasa Migita

Fabrication and structural, ferro- and piezoelectric properties of(Univ. of Hyogo)

heteroepitaxially c-axis-oriented BNEuT thin films

Ryoga Ito(Univ. of Hyogo)

P-48

Wei Peng(Seoul National Univ. )P-49

Miyu Hasegawa(Tokyo Institute of Tech.)

P-50
P-51
P-52

Ryu Hayashimoto

P-54
P-55

Polar instability-induced relaxor-like ferroelectric in (111)oriented BaTiO3 epitaxial Films
Fabrication and evaluation of (Bi, Na) TiO3 - BaTiO3 based thinfilm by using PLD method
Optical strains of Mn-doped BiFeO3 thin films induced by bulk
photovoltaic effect and inverse piezoelectric effectNao Yoshimura

Metalorganic chemical vapor deposition of BiFeO3 thin films(Univ. of Hyogo)using FeOx seed layer

Naoki Okamoto

The direct piezoelectric properties of (100) BiFeO3 epitaxial
films deposited by rf magnetron sputtering

Ryuta Noda

Investigation of MPB in Pb(Zrx,Ti1-x)O3 epitaxial films by RF(Waseda Univ.)

magnetron sputtering growth

Takahiro Shimidzu

Frequency switchable polarity inverted resonators based on cubic(Waseda Univ.)

PMN-PT/tetragonal PZT epitaxial stackIzuru Kanagawa

Piezoelectric properties of vinylidene fluoride – trifluoroethylene(Osaka Prefecture Univ.)

P-56

heteroepitaxially grown by sputtering(Univ. of Hyogo)(Osaka Prefecture Univ.)

P-53

Fabrication and structural characteristics of BNEuT thin films

Bich Thuy Nguyen(Univ. of Ulsan )copolymer [P(VDF-TrFE)] films
Fabrication condition of lead-free (K0.5Na0.5)NbO3-based thinfilms by RF magnetron sputteringNumberPresenter

Title

P-57

Ryosuke Kanaya

Fabrication of ZnO thin films by PLD using nonequilibrium with(Osaka Prefecture Univ.)

P-58
P-59

additional oxygen-nitrogen plasma source

Taiki Obayashi

Electrical characteristics of BNEuT thin films heteroepitaxially(Univ. of Hyogo)

grown in the c-axis direction

Tae Kwon Song

Improvement of piezoelectric and ferroelectric(Changwon National Univ.)

properties in thermally quenched BiFeO3-BaTiO3ceramics

P-60
P-61

Chang Won Ahn

Large electrostrain response under low electric-field of(Univ. of Ulsan)

Bi1/2Na1/2TiO3-based relaxor/ferroelectric composite ceramics

Masaaki Aramaki(Osaka Prefecture Univ.)

P-62

Kyohei Izumi

Development of high performance piezoelectric
MEMS vibration energy harvester using BiFeO3 films
Energy harvesting from AC power line

(Osaka Prefecture Univ.)

P-63
P-64Yuka Mazda

Thick PZT epitaxial film growth(Waseda Univ.)

application below 100 MHz

for ultrasonic transducer

Masayuki Sohgawa

Characterization of PZT thin film deposited on Si cantilever(Niigata Univ.)

embedded in PDMS for tactile sensing as force and vibration
detection

P-65

Sang-Don Bu(Chonbuk National Univ.)

Fabrication and characterization of lead free(Bi0.5Na0.5)TiO3(Bi0.5K0.5)TiO3/multi-wall carbon nanotubes
composite

P-66
P-67

Su Hyoun Kwon

Ferroelectric polarization-mediated transport of MoS2 layers on(Ewha Womans Univ.)c-cut LiNbO3 single crystals

Atsushi Kobayashi

Improved hydrogen resistance of (Pb,La)(Zr,Ti)O3 capacitor(Osaka Prefecture Univ.)

by employing Sn-doped In2O3 topand bottom electrodes

P-68

Yoshinori Takikawa(Nagoya Institute of Tech.)

P-69

Dielectric dispersion in PCPB/MBBA mixtures showing thedual frequency characteristic

Yong Bin Lee

Interfacial oxide engineering of hafnium zirconium oxide-based(Seoul National Univ.)

ferroelectric capacitors for ferroelectric and negative capacitancefield effect transistor applications

P-70

Daiki Kamada

Growth process of HfO2:Y epitaxial thin films on (001) Si(Osaka Prefecture Univ.)

P-71

Sanghyun Park

Negative capacitance phenomenon depending on the wake-up(Hanyang Univ.)

effect and the measurement temperature in the ferroelectric
Si:HfO2 films

P-72

Shuhei Nakayama(Sophia Univ.)

Phase transition and ferroelectric property of Ca doped HfO2thin films

NumberPresenter

P-73

Jangho Roh(Seoul National Univ.)

Title
Ferroelectric characteristics of Hf0.5Zr0.5O2-based MetalferroelectricInsulator-semiconductor capacitors for steep-slope
transistor

P-74

Jinho Byun
(Pusan national Univ.)

P-75

So Yeon Lim(Sookmyung Womens Univ.)

First-principles studies of the effects of oxygen vacancies on
the HfO2-based ferroelectric tunnel junction
Piezoresponse force microscopy investigation of the doped HfO2
films annealed at different temperatures