Shibaura confidential

CDEによる受託加工サービスのご説明

Contracted Processing Serviceby CDE (Chemical Dry Etcher)
SHIBAURA MECHATRONICS CORPORATION
Fine Mechatronics Division

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Shibaura Confidential

Contents
 Introduction

CDE Feature ~ Why User needs CDE System
Example of CDE Result

 Contracted Processing ServiceProcedure
Tools and Specification
Process Application and Material

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Shibaura Confidential

Feature (Chemical Dry Etcher)
Isotropic Etching and Plasma Damage Free
RadicalIon(PTFE)

Refernce : E.Meeks他 “Result from modeling and simulation of CDE systems,”Sandia National Laboratories Report SAND96-8241

CF4+O2 Plasma  F + O + COF+ CFx + COF2 + Cox
Si + 4F  SiF4 ↑ + hν (450nm: SiF3*)

CDE (Remote Plasma) provides…
 Isotropic Etching Plasma Damage Free Etching (much better than ICP/CCP Plasma) Device Performance Improvement
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Shibaura Confidential

Why user needs CDE system
Shibaura’s CDE (Chemical Dry Etching) technology provides

Plasma Damage Free !!
ICP/RIE (Plasma in Chamber)
RFIon damage !!
Ion Charge !!

Antenna
Gas

PlasmaDamage layer→Device characteristics deteriorate.
(Customer information)

Pump
RFCDE

ICP/RIE process,plasma damage occurs at surface.

2.45GHz

Only radical !!  Isotropic Etch
Ion Free !!
No Ion Charge !!

Quartz Tube
Gas
PlasmaTransport
Tube

CDE process,plasma damage dose not occur atsurface.

CDE Chamber

Pump
ESC

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Example of CDE Result■Si Surface Smoothing

Shibaura Confidential■Si Damaged Layer Removal
Roughness
Improvement

SiContact Resistance
Improvement

Ra: 1.24nm

Ra: 0.17nm

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Shibaura Confidential

Contents
 Introduction

CDE Feature ~ Why User needs CDE System
Example of CDE Result

 Contracted Processing ServiceProcedure
Tools and Specification
Process Application and Material

6
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Service Procedure

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１．評価内容・試作のご相談
Discussion for Contracted Processing

・プロセスエンジニアとのお打合せ ⇒ 評価内容についてお取決め
Discussion with process engineer

・御見積価格のご連絡
Sending the quotation

Considering the evaluation plan

⇒ ご評価内容を決定

Fix he evaluation items/procedure

２．条件出し、ご評価
Evaluation by SHIBAURA

・条件出し評価、試作評価の実施 ⇒ デモ機見学、お立合い出来ます
Executing the best evaluation

Demo Tool Tours in our fab (If you want)

３．評価ご報告、今後の進め方ご相談
Evaluation Report and Discussion for the next step

・報告書の作成、ご報告⇒ 費用のお支払い

Sending the report

Acceptance and payment

・今後の進め方ご相談⇒ CDE受託加工の継続等についてDiscussion for the next stepDiscussion for the next step
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Shibaura Confidential

Evaluation Tools
Our Clean Room (Class 10)
Process Tools

CDE-80(3~8inch)Analysis Tools* CDE300(12inch)* ICE200/300[ICP+Bias][Low Temp][Ashing](8-12inch)* Single WET(12inch)

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光学顕微鏡(Optical Microscope)
膜厚測定器(Thickness Measurement)
電子顕微鏡(SEM)
エネルギー分散型X線分析(EDX)
段差測定器(Step Height Measurement)
蛍光X線(X-ray fluorescence spectrometers)
パーティクル測定器(Particle Detector)
オシロスコープ(Oscilloscope)サーモグラフィカメラ(Thermography Camera)
接触角計(Contact angle meter)

XPS, ToF-SIMS, AES, AFM, IC-Mass etc,
the other analysis tools are outsourcing* Draft Chamber (Fumehood)(for batch WET by coupons)* Sub-Tools for Unit Process: need to discuss for use
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Service Specification
Service・ Isotropic Chemical Dry Etching by CDE-80

Summary・ Plasma Damage Free (Remote Plasma)

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・ Discussion for Evaluation (Item, procedure, schedule etc)
・ On-site Analyze (Microscope, Particle, Thickness, SEM/EDX)・ Outsourcing Analyze (XPS, AFM, TEM, AES, ToF-SIMS etc)
・ Unit Process Support by using the outer tools(※TDB: WET Draft Chamber, Single WET Processer, Ashing）
・ Demo tool tours in our fab
Specification

・ Plasma： Remote Plasma by micro wave (2.45GHz)

・ Gas： CF4, O2, N2, CL2, NF3. SF6, CH2F2, H2/N2, Ar, He・ Stage Temp.： 15~120℃ (※~350℃ by special demo tool)・ Sample Size： 6inch/8inch(/12inch by CDE300) SEMI wafer
Maximum：r≦300mm, Height≦50mm
Minimum ： about 10mm square (coupon process)
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Process Application
Material

・ General： Si, Si3N4, SiO2, Resist, SiGe

・ Metal： Ti, TiN, W, Ta, TaN, Mo, Cr, Ru etc

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・ The others： SiC, GaN, Ga2O3・ Special： Glass, Films, Thin wafer, TDB for the others

・ Surface Modification ： AL, AL2O3, Cu, Au, Ag, Co, Ni, In, Sn, Zn etc
Process・ Damaged Layer Removal (Light Etching)

Application

・ Surface Roughness Smoothing・ Corner Rounding
・ Etch Back / Recess

・ Removal (high selectivity removal)
・ Surface Modification
・ Residue Removal (De-Scum)

どんなことでもお気軽にお問合せください。
If you have any question/interesting, please let us know.
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Shibaura Confidential

CDE Process Applications

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Device Improvement Process
Logic / FlashSpacer SiN Pull Back

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CMOS Image Sensor
Coverage Improvement
S/D No Plasma Damage

STI Damage Removal

Si Surface No Plasma Damage

SiN
Si-Sub

S/DSi

Poly/SiN Selectivity=1 Taper Etching

Oxide Etch Back

Si Interface
No Plasma Damage

Oxide
SiN
Poly-Si

Power Device/Discrete

Yield
Improvement

Si-Sub
Si-Sub

Si-Sub

Improvement White Spot, Dark Current

TSV / MEMS

Scallop Smoothing

Si Contact Damage Removal

SiSi

Corner Rounding

Si

PR

SiImprovement Contact Resistance and E-Mobility

Improvement Film Cruck and Particle

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CDE Si Material Process Table
No.

ProcessSketch

PictureSiN(1)

SiN Pull Back

(2)

Si Corner Rounding(3)

Si smoothing
Damaged Layer Removal

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SiN
SiSiSiRoughness
Damaged Layer

SiSiSiSi
Poly-Si(4)(5)

Poly-Si
Etch back

BPSG
Round Etch

Poly-Si
PR

PR

BPSG

SiO2
Si residue(6)

After Al-Si etch
Si residue remove

Al-Si

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CDE Resist Process Application
No.

Process

Resist E/R(1)

Recess(Etch Back)300~1700[nm/min](2)

Sliming5~100[nm/min]

SketchPicture

PRResidue(3)

Descum~1700[nm/min]

Organic
Contamination

Surface Cleaning(4)(Hydrophobic Hydrophilic)~10[nm/min]Hydrophilic Surface
No UV Damage
Few Electric Charge

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Fundamental Data for SiGe

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Si

Higher Selectivity to Si

SiGe : Ge

ECS 2006
Isotropic Etching of Si1-xGex Buried Layers Selectively to Si for the Realization of Advanced Devices.
S. Borel, V. Caubet, J. Bilde, A. Cherif, C. Arvet, C. Vizioz, J.M.Hartmann, G. Rabillé, T. Billon
ECS Transactions - Cancun" Volume 3, "SiGe and Ge: Materials, Processing, and Devices"High Ge Concentration will achieve higher SiGe/Si selectivity
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CDE Memory Process
Process Type
Oxide

Poly-Si Removal
Poly-Si

Poly-Si

SiO2

Stringer

Damaged Si Removal

Damage Layer

Ox

Si-Sub

Etch Back(SiN, Poly-Si)

Si-SubSiN

SiN

Poly-Si
Si-SubRemoval(SiN, Poly-Si)

Si-SubSiN

Poly-Si

Poly-Si
Si-SubPoly-Si
Oxide
Poly-Si

Si-SubPR

Si-SubONO SiN Etching

SiN
STI
Poly-Si

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CDE Process Capability Table
Etch
Material

Main ProcessTemp.
[deg]Etch Rate[nm/min]

Unif.
[%]

Recess / Etch Back / Removal

15~12030 ～ 500

Damaged Layer Removal/ Smoothing / Rounding

25~120Etch Back / Removal

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Selectivity
Poly-Si

Ox

SiN<±310～100

10～30

3 ～ 30<±41～200.2～102530 ～ 100<±41～20

10～10025

3 ～ 30<±50.2～10

1～20

Poly-Si

SiNOx

Etch Back / Round Etch

70~1205 ～ 100<±5<1<2MetalEtch Back (W, Mo)

25~120200 ～ 300<±10No data

< 80<6Removal / Recess

70~100100 ～ 2000<±5No data

> 100> 100

Residue Strip / Sliming/ Descum

25~10030 ～ 100<±5No data

10～10010～100PR

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