AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
HAH1BVW S/02

Introduction

Principle of HAH1BVW Family

The HAH1BVW family is for the electronic measurement of DC,
AC or pulsed currents in high power and low voltage automotive
applications with galvanic separation between the primarycircuit (high power) and the secondary circuit (electronic circuit).

The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.

The HAH1BVW family gives you the choice of having different
current measuring ranges in the same housing.

The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportional
to:Features

B (IP) = a × IP
The Hall voltage is thus expressed by:
UH = (cH / d) × IH × a × IP●● Ratiometric transducer●● Open Loop transducer using the Hall effect●● Low voltage application●● Unipolar +5 V DC power supply●● Primary current measuring range ±200 A●● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C●● Operating temperature range: −40 °C < T < +125 °C●● Output voltage: full ratio-metric (in sensitivity and offset).

Advantages

Except for IP, all terms of this equation are constant.
Therefore:
U H = b × IPaconstantb
constant
cH
Hall coefficient
dthickness of the Hall plate
IH
current across the Hall plates
The measurement signal UH amplified to supply the user output
voltage or current.

●● Excellent accuracy●● Very good linearity●● Very low thermal offset drift●● Very low thermal sensitivity drift●● Galvanic separation●● Non intrusive solution.

Automotive application●● Battery Management.

Fig. 1: Principle of the open loop transducer.

N° 97.K6.44.002.0
12February2019/version 2

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HAH1BVW S/02
Dimensions (in mm)

IP2D matrix bar code areaIPMechanical characteristics

Remark●● Plastic casePBT GF30●● Uout > Uo when IP flows in the positive direction (see arrowon drawing).

●● Magnetic core

FeSi wound core●● Mass57 g ±5 %●● Pins

Brass tin plated●● IP level

IPx2

System architecture (example)
LEM sensor

UC+5 VIP M●● Mating connector type

TYCO connector P/N 1473672-1●● Assembly torque2.2 N·m ±5 %.

+5 V

C1

Primary
Current

Mounting recommendation

Typical application
Schematic interfaceUVout
C2CLRL

MagneticCore

Electronic schematic
CL< 100 nF EMC protection (optional)
RC Low pass filter (optional)

LEM sensor.
C+5VIP M

C1Primarycurrent

Components listIC

Hall sensor ASIC

C1

Decoupling capacitor

100 nF

C2EMC protection capacitor

68 nF

AUout

On board diagnostic
RL > 10 kΩ. Resistor for signal line diagnostic (optional)A
Pin out

C2
Magnetic
core

B

B
D

12February2019/version 2CD

GND

UC (5 V)not connected

Uout

Open circuit
Short GND

Diagnostic
UIN ≤ 0.15 V
UIN ≤ 0.15 V

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HAH1BVW S/02
Absolute ratings (not operating)Parameter

Specification

SymbolUnit

Maximum supply voltage

UC maxV

Maximum reverse supply voltage

UC maxV−14

Maximum output voltage

Uout max

V−1414

Maximum output current

Iout max

mA−1010TS°C−40125

Electrostatic discharge voltage (HBM - HumanBody Model)

UESD HBM

kV8

Maximum admissible vibration (random RMS)

γmax

m·s-2

96.6

10 to 2000 Hz, −40 °C to 125 °CRMS voltage for AC insulation test

UdkV

2.550 Hz, 1 min

Creepage distance

dCpmm

4.85

Clearance

dCImm

4.85

Comparative traking index

CTIAmbient storage temperature

Min

TypicalConditions

Max14

Uout Reverse / Forward voltage

PLC3

Operating characteristics in nominal range (IP N)
Parameter

Specification
Min Typical
Max
Electrical Data

SymbolUnit

Primary current, measuring range

IP M

A−200

Primary nominal RMS current

IP NA

−200

Supply voltage

UCV

4.5

Ambient operating temperature

TA°C

−40

Output voltage

UoutV

Uout = (UC / 5) × (Uo + S × IP )Sensitivity

SmV/A

10Offset voltage

UOV

2.5

Output resolution

mVConditions

20020055.5125@ TA = 25 °C

2.5@ UC = 5 V

Output clamping high voltage

US Z

4.74

Output clamping low voltage

US Z

Current consumption

ICmA

Load resistanceRLΚΩ

Output internal resistance

Rout

Ω

Ratiometricity error

εr%±0.2

Sensitivity error

εS%

±1

@ TA = 25 °C, @ UC = 5 V

Electrical offset voltage

UO E

mV

±2.5

@ TA = 25 °C, @ UC = 5 V

Magnetic offset voltage

UO M

mV±2Linearity error

εL%

Average temperature coefficient of UO E

TCVO E AVmV/°C±0.06

Average temperature coefficient of S

±0.02

0.26

@ UC = 5 V@ TA = 25 °C, @ UC = 5 V

71010@ TA = 25 °C

110

Performance Data

−1

@ UC = 5 V, @ TA = 25 °C
1TCS AV%/°C

Step response time @ 90 %tr

msFrequency bandwidth

BWHz

Peak-to-peak noise voltage

Uno ppmV

10Output RMS noise voltage

UnomV

1.6

Start-up timetstartms1

Setting time after overloadts

ms1012February2019/version 2% of full scale

1070@ −3 dB
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HAH1BVW S/02

Overall accuracy εtot
Overall accuracy εtot @ UC = 5 V (-40 °C ≤ TA ≤ 125 °C)

εtot (mV)50

εtot (A)
545

4.5

40

435

3.530

325

2.5

20

215

1.5

10

15

0.5

0-200-150-100-50

050

100

150

2000IP (A)IP (A)−200

12February2019/version 2Overall accuracy εtot specification
Typical values
Maximum values
TA = 25 °C, Uc = 5 V−40 °C ≤ TA ≤ 125 °C, Uc = 5 V

25 mV

2.50 A

1.25 %

45 mV

4.50 A

2.25 %

00

7 mV

0.70 A

0.35 %

10 mV

1.00 A

0.50 %

20025 mV

2.50 A

1.25 %

45 mV

4.50 A

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HAH1BVW S/02
PERFORMANCES PARAMETERS DEFINITIONS

Response time (delay time) tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.
I [A]

Uout

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %
UoutIPtD

IP

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Magnetic offset:

Sensitivity with temperature:

The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primarycurrent.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.
UoutThe error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation ST is the maximum variation (inppm or %) of the sensitivity in the temperature range:
ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCS AV is the ST value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Non linearity example

Offset voltage @ IP = 0 A:The offset voltage is the output voltage when the primary current

Referencestraight lineis zero. The ideal value of UO is UC/2. So, the difference of
Max linearity error

IPLinearity variation in IP N

UO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution ofthe ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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HAH1BVW S/02
Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with “Tracking_Test Plan_Auto” sheet.
NameStandard
CHARACTERIZATION @ 25 °C

Sensitivity / Accuracy / Overall accuracy

LEM 98.20.00.574.0

Offset / Electrical Offset / Magnetic Offset

LEM 98.20.00.573.0

Linearity error

LEM 98.20.00.370.0

Current Consumption

LEM 98.20.00.579.0

CHARACTERIZATION WITH T °C (initial)
Sensitivity / Accuracy / Overall accuracy

LEM 98.20.00.574.0

T °C variation of ... / Temperature Coefficient of S

LEM 98.20.00.574.0

Offset / Electrical Offset / Magnetic Offset

LEM 98.20.00.573.0

T °C variation of ... /Temperature Coefficient of Offset

LEM 98.20.00.573.0

Linearity error

LEM 98.20.00.370.0

Current Consumption

LEM 98.20.00.579.0

ELECTRICAL TESTS @ 25 °C
Dielectric withstand Voltage test

2500 V AC / 1 min / 50 Hz

Insulation resistance test

500 V DC, time = 60 s
RINS ≥ 500 MΩ Minimum

ENVIRONMENTAL TESTS (CLIMATIC)
Thermal shock

IEC 60068-2-14 Na (01/2009)

Steady state T °C Humidity bias life test

JESD 22-A101 (03/2009)

MECHANICAL TESTS
Vibration random in T °C

IEC 60068-2-64 (02/2008)

ShocksIEC 60068-2-27 (02/2008)

Free Fall (Device not packaged)

IEC 60068-2-31§5.2: method 1 (05/2008)

FINAL CHARACTERIZATION
Characterization @ 25 °C
Characterization with temperature

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