AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY
HAH3DR 800-S07/SP1; HAH3DR 900-S07/SP1; HAH3DR 1000-S07/SP1; HAH3DR 1100-S07/SP1; HAH3DR 1200-S07/SP1;
HAH3DR 800-S07/SP4; HAH3DR 900-S07/SP4; HAH3DR 1000-S07/SP4; HAH3DR 1100-S07/SP4; HAH3DR 1200-S07/SP4Introduction

Principle of HAH3DR-S07 family

The HAH3DR-S07 family is a tri-phase transducer for DC, AC,or pulsed currents measurement in automotive applications. It
offers a galvanic separation between the primary circuit (highpower) and the secondary circuit (electronic circuit).

The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportional
to:Features● Open Loop transducer using the Hall effect sensor● Low voltage application● Unipolar +5 V DC power supply● Primary current measuring range up to ±1200 A● Maximum RMS primary admissible current: defined by thebusbar, the magnetic core or ASIC T < +125 °C● Operating temperature range: −40 °C < T < +125 °C● Output voltage fully ratiometric (in sensitivity and offset)● All in one tri-phase transducer● Perfect fit to ‘HybridPACK TM’ drive Infineon● Simplified installation with press fit contacts eliminates
soldering.

B (IP) = a × IP

The Hall voltage is thus expressed by:
UHall = (cHall / d) × IHall × a × IP
Except for IP, all terms of this equation are constant.
Therefore:
UHall = b × IP

Special features● HAH3DR S07/SP1 series offer three built-in brass spacers
with through hole for busbar attachment● HAH3DR S07/SP4 series offer three built-in brass blind
threaded nuts for busbar attachment.

aconstantb

constant

cHall

Hall coefficientdthickness of the Hall plate

IHall

current across Hall plates

The measurement signal UHall is amplified to supply the user
output voltage or current.

Advantages● Excellent accuracy● Very good linearity● Very low thermal offset drift● Very low thermal sensitivity drift● High frequency bandwith● No insertion losses● Very fast delay time.

+ UC

IP

Uout
- UC

Primary Current IP

0V

Insulated Output Voltage Uout

Fig. 1: Principle of the open loop transducer.

Automotive applications● Starter Generators● Inverters● HEV applications● EV applications● DC / DC converter.

N° 97.H2.56.017.0, N° 97.H2.58.017.0, N° 97.H2.60.017.0, N° 97.H2.61.017.0, N° 97.H2.62.017.0,
N° 97.H2.56.047.0, N° 97.H2.58.047.0, N° 97.H2.60.047.0, N° 97.H2.61.047.0, N° 97.H2.62.047.0
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Dimensions (in mm)

HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4

HAH3DR XXXX-S07/SP1U

HAH3DR XXXX-S07/SP4

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4

Mounting Recommendation

Secondary connection

Secondary connection
M4 screws

M4 screws

M3 screws

M3 screws*Threaded blind nuts
M5 screws*Through hole spacers
M5 screws

HAH3DR XXXX-S07/SP1

Mass(g ±5 %)

Reference

HAH3DR S07/SP190

HAH3DR S07/SP485

Notes:

HAH3DR XXXX-S07/SP4

Stainless Iron M5 screw 3)

Secondary Connection
Type

Force
(N)

Press-fit
terminals

1)

Stainless Iron M4 screw 3)

SpacerType

Torque(Nm ±5%)

Through hole-

5.5

Threaded holeL = 12 mm 2)

5.5

Stainless Iron M3 screw

Type

Torque(Nm ±5 %)Type

Torque(Nm ±5 %)-2

DELTA PT®
self-tapping
screw

0.8

1)

Max. insertion force for 5 press fit pins = 500 N; Min. retention force after mounting = 100 N
The length recommended is based on 1mm thickness of IGBT’s busbar and 3mm thickness of customer’s busbar
3)
The lockwasher and flatwasher are recommended.
2)

RemarkUout > UO when IP flows in the positive direction(see arrow on drawing).

System architecture (example)
HAH3DR-S07
Phase 1
IP1
Primary
current

UC

Pin 1

Gnd

Pin 2

Uout1

Pin 3

Uout2

Pin 5

220 nF

Hall
cell

Typical application schematic interface+5 V DC

OutputAmplifier

4.7 nF

R
CL

RL

CL

RL

C

Phase 2IP2Primary
currentHall
cell
OutputAmplifier

4.7 nF

R
C

Phase 3
IP3
Primary
currentHall
cell
OutputAmplifier

Uout3

Pin 4

4.7 nF

R
CL

RL

C

CL< 2.2 nF EMC protection (optional)
RC Low pass filter (optional)

On board diagnostic
RL > 10 kΩ Resistor for signal line diagnostic (optional).

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4

Absolute ratings (not operating)Parameter

SymbolUnit

Min

Maximum supply voltage

UC maxV−0.5

Ambient storage temperature
Electrostatic discharge voltage

TA st

°C

−40

UESD HBM

kV

Ud
dCp
dCI
CTI
RINS

kV
mm
mm

(HBM - Human Body Model)

RMS voltage for AC insulation test
Creepage distance
Clearance
Comparative traking index
Insulation resistanceMΩSpecification
TypicalMax
8
6.5

Conditions
Continuous not operating
Exceeding this voltage may
temporarily reconfigure thecircuit until the next power on

125
8
3.06

50 Hz, 1 min, IEC 60664 part1

6.4
4.8
PLC3
500

500 V DC, ISO 16750

Operating characteristics
All characteristics noted under conditions −IP M ≤ IP ≤ IP M, 4.75 V ≤ UC ≤ 5.25 V, −40 °C ≤ TA ≤ 125 °C, unless otherwise
noted.
Parameter

SymbolUnit

Min

Electrical Data

Supply voltage 1)
Ambient operating temperature

UC
TA

V
°C

Output voltage (Analog)

Uout

V

Offset voltage
Current consumption
Load resistance
Output internal resistance

UO
IC
RL
Rout

V
mA
kΩ
Ω

Specification
Typical
Max

4.75
−40

5

Conditions

5.25
125

Uout = (UC/5) × (UO + S × IP ) @ TA = 25 °C
2.5
45

60

1

10

10

@ UC = 5 V

Performance Data

Ratiometricity error
Sensitivity error
Electrical offset voltage

εr
εS
UO E

%
%
mV

±0.5
±0.6
±4

Magnetic offset voltage

UO M

mV

±3

Average temperature coefficient of UO E

TCUO E AV

mV/°C

±0.05

Average temperature coefficient of S

TCSAV

%/°C

±0.03

Linearity error

εL%

Delay time to 90 % to the final output value
for IP N step

tD 90

µs

BW
Uno pptstart
∆φ

kHz
mV
µs
°

Frequency bandwidth 2) 
Peak-to-peak noise voltage
Start-up time
Phase shift
Notes:

1)−1
2@ TA = 25 °C, @ UC = 5 V@ TA = 25 °C, @ UC = 5 V@ TA = 25 °C, @ UC = 5 V, after
±IP M

1

% of full scale
For −1000 A < IP < 1000 A

6

di/dt = 100 A /µs

40
4
800
−4

@ −3 dB@ DC to 1 MHz@ DC to 1 kHz

 The output voltage Uout is fully ratiometric. The offset and sensitivity are dependent on the supply voltage UC relative to the following formula:

2)

 5
 1
IP = 
× U out − U O  × with S in (V/A)
 UC
 S

Primary current frequencies must be limited in order to avoid excessive heating of the busbar, magnetic core and the ASIC (see featureparagraph in page 1).

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4
HAH3DR 800-S07/SP1, HAH3DR 800-S07/SP4
Parameter

SymbolPrimary current, measuring range

IP M

Unit

Specification
TypicalMax

Electrical Data
A
−800

S

mV/A

SymbolUnit

Sensitivity

Min

Conditions

800
2.50

HAH3DR 900-S07/SP1, HAH3DR 900-S07/SP4
Parameter

Primary current, measuring range

IP M
S

Sensitivity

Min

Specification
TypicalMax

Electrical Data
A
−900
mV/A

Conditions

900
2.22

HAH3DR 1000-S07/SP1, HAH3DR 1000-S07/SP4
Parameter

Primary current, measuring range

SymbolIP M
SSensitivity

Unit

Min

Specification
TypicalMax

Electrical Data
A
−1000
mV/A

Conditions

1000
2.00

HAH3DR 1100-S07/SP1, HAH3DR 1100-S07/SP4
Parameter

Primary current, measuring range

SymbolIP M
SSensitivity

Unit

Min

Specification
TypicalMax

Electrical Data
A
−1100
mV/A

Conditions

1100
1.82

HAH3DR 1200-S07/SP1, HAH3DR 1200-S07/SP4
Parameter

Primary current, measuring range
Sensitivity

Symbol

IP M
S

Unit

Min

Specification
TypicalMax

Electrical Data
A
−1200
mV/A

Conditions

1200
1.67

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4

Total error

HAH3DR XXX-S07/SP1&SP4: Total error εtot
All phases coupling included and specified @ 3 sigma
±90.0
±80.0

Total error (mV)

±70.0
±60.0
±50.0
±40.0
±30.0
±20.0
±10.0
±0.0
-1200 -1000

-800

-600

-400

-200

0

200

400

600

800

1000

1200

Primary current IP M (A)Total error @ 25 °C

IPTotal error @ T range

Total error specification
TA = 25 °C, UC = 5 V−40 °C ≤ TA ≤ 125 °C, UC = 5 V

(A)

(mV)

(mV)

1200

±55

±80

1100

±44

±68

1000

±35

±58

900

±33

±54

800

±31

±50

0

±15

±15

−800

±31

±50

−900

±33

±54

−1000

±35

±58

−1100

±44

±68

−1200

±55

±80

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4
Mounting Operation and Recommendations

OP10 – Transducer insertion

OP20 – PCB insertion

Rigid Support

Rigid Support

Notes:
1. Rigid support under LEM transducer during insertion
2. Press-fit terminal refers to outline drawing

OP30 – Screws mounting

M4

M3

M4

M3

Notes:
1. Stainless Iron M3 self-tapping screws (2pcs)
2. Stainless Iron M4 screws (2pcs relative with transducer)

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HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4PERFORMANCES PARAMETERS DEFINITIONSDelay time tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.
I [A]

Uout

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %
Uout

IP
tD

IP

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Magnetic offset:

Sensitivity with temperature:

The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primary
current.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.
Uout

The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation ST is the maximum variation (inppm or %) of the sensitivity in the temperature range:
ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCS AV is the ST value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Non linearity example

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary current

Referencestraight line

is zero. The ideal value of UO is UC/2. So, the difference of
Max linearity error

IP
Linearity variation in IP N

UO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution of
the ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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Verification Test SpecificationName

HAH3DR XXXX-S07/SP1; HAH3DR XXXX-S07/SP4
Standard

Conditions

Electrical tests
Phase delay check

LEM Procedure

30 Hz to 100 kHz @ 20 A peak

Frequency Bandwidth

LEM Procedure

30 Hz to 100 kHz @ 20 A peak

Noise measurement

LEM Procedure

Sweep from DC to 1 MHz

Delay time di/dt

LEM Procedure

100 A/μs, I pulse = IP M

dv/dt

LEM Procedure

5000 V/μs, U = 1000 V

Dielectric Withstand Voltage test

ISO 16750-2 § 4.11

2500 V AC/ 1 min/ 50 Hz

Insulation resistanceISO 16750-3 § 4.12

500 V DC, time = 60 s
RINS ≥ 500 MΩ minimum

Environmental tests
Steady state T °C Humidity bias life test

JESD 22-A101 (03.2009)

1000 hours +85 °C/ 85 % RH UC = 5 V , IP = 0 A

Low temperature storage test

ISO 16750-4 § 5.1.1.1(04.2010)
IEC 60068-2-1 Ad(03.2007)

Storage: −40 °C for 96 h
UC not connected, IP = 0 A

High temperature storage test

ISO16750-4 § 5.1.2.1(04.2010)
IEC 60068-2-2 Bd(07.2007)

Storage: 125 °C for 1000 h
UC not connected, IP = 0 A

Thermal Shock

ISO16750-4 § 5.3.2(04.2010)
IEC 60068-2-14 Na(01.2009)

1000 cycles (1000 hours),
30 min @ −40 °C//30 mn @ +125 °C
UC not connected, IP = 0 A

Power Temperature cycle test

ISO 16750-4 § 5.3.1(04.2010)
IEC 60068-2-14 Na(01.2009)

30 cycles(240 h), −40 °C ±125 °C
U C = 5 V , IP = 0 A

Mechanical tests
Mechanical ShockISO 16750-3 § 4.2.2(12.2012)

50 g/ 6 ms Half Sine @ 25 °C
10 shocks of each direction (Total: 60)
UC not connected, IP = 0 A

Sine Vibration in 25 °C

IEC 60068-2-6

Sine 30-60 m/s2, 100 Hz - 440 Hz@ 25 °C
22 hr/axis
U C = 5 V , IP = 0 A

Random Vibration in T °C

IEC 60068-2-64

96 m/s2 ,10 Hz - 2000 Hz, −40 °C < T < 125 °C
22 hr/axis
U C = 5 V , IP = 0 A

Free Fall(Device not packed)

ISO 16750-3 § 4.3(12.2012)

Height = 1 m, Concrete floor
3 axes, 2 directions by axis, 1 sample by axis

Radiated Emission

CISPR 25:2016

0.15 MHz to 2500 MHz Table 9,Class 5

Immunity to conducted disturbances (BCI)

ISO 11452-4:2005

1 MHz to 400 MHz Level: 2 Criteria: A

Radiated electromagnetic field immunity test

ISO 11452-2:2004

F = 400 MHz to 1 GHz;
Level = 100 V/m (CW, AM 80 %) F = 0.8 GHz to 2 GHz;
Level = 70 V/m (CW, PM PRR = 217 Hz , PD = 0.57 ms)

ESD Test

ISO 10605 (07.2008)
IEC 61000-4-2

Contact: ±4, ±6 kV Air: ±8 kV
UC not connected

EMC test

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