About GSI Technology ....................................................................................................................................... 3

New Technology .................................................................................................................................................. 4

SigmaQuad and SigmaDDR SRAMs.................................................................................................................6

No Bus Turnaround SRAMs............................................................................................................................20

Synchronous Burst SRAMs..............................................................................................................................24

Low Latency DRAMs ...................................................................................................................................... 29

Part Number Decoders..................................................................................................................................... 30

Regional Sales Locations...................................................................................................................................32-2-

GSI Technology designs, develops and markets a
broad range of high performance memory products
for networking, military, medical, automotive andother applications. We specialize in memory products
featuring very high transaction rates, high density,
low latency, high bandwidth, fast clock access times,
and low power consumption. We offer unusually longproduct support life cycles, short lead times, thelargest high performance memory product portfolio
in the market and complete pre and post-sale support.
GSI Technology offers both Static Random Access Memory products (SRAMs) and Low Latency DRAM
products (LLDRAM). GSI’s SRAMs utilize world-class, low power CMOS process technologies down to
40 nanometer. Our Low Latency DRAM product line is fabricated using a 72nm DRAM process
technology. Most GSI products are specifically recommended for use with a variety of host devices, suchas NPUs and FPGAs.
GSI Technology is also now offering Radiation-Hardened SRAMs. These Rad-Hard SRAMs are
expected to serve as a critical element for advanced systems that leverage leading-edge FPGAs, ADCs,
and DACs; but until now lacked the high density, high performance, and power efficiency that ouroutstanding memory products bring. The initial devices will be qualified to Class-Q and Class-V levels tomeet the rigorous requirements of aerospace and defense customers.
In late 2015, GSI Technology expanded its corporate footprint to include in-place associative computing
for markets including machine learning, computer vision, and cyber security.
At GSI Technology, we focus on providing the best value combination of power, speed, density, quality,
reliability and delivery in the world.
Founded in Cupertino, California in March 1995, and now headquartered in Sunnyvale, California, GSI
Technology is focused on providing high performance memory for the long run.

-3-

Radiation-Hardened SRAMs
GSI Technology is excited to introduce several new high performance Radiation-Hardened synchronous SRAMs.
These Rad-Hard SRAMs are expected to serve as a critical element for advanced systems that leverage leadingedge FPGAs, ADCs, and DACs; but until now lacked the high density, high performance, and power efficiency that
our outstanding memory products bring. The initial devices will be qualified to Class-Q and Class-V levels to meetthe rigorous requirements of aerospace and defense customers.
For our satellite and defense customers that have been anxiously awaiting an alternative to current Rad-Hardmemory solutions, our Rad-Hard SRAMs leverage our proven commercial technology and architecture withradiation-hardening, creating an efficient, high performance, leading-edge memory at the 40nm technology node.
For more information regarding this exciting new technology, please contact us at aerospace@gsitechnology.com.
*Radiation-Tolerant SRAMs will be coming soon for those less robust applications.

SigmaQuad-II+TM
165 BGAGSI P/N

Density

ConfigBurst
LengthRead
Latency

ODT

Speed (MHz)

Voltage

CCGA
(CE)

LGA
(LE)

GS82612QT37yy-###a*
GS82612QT19yy-###a

288Mb

8M x 36
16M x 18

2

2.0

Weak/
Strong350/250(Military Temp)

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

GS81332QT37yy-###a
GS81332QT19yy-###a

144Mb

4M x 36
8M x 18

2

2.0

Weak/
Strong(Military Temp)

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

GS8692QT37yy-###a
GS8692QT19yy-###a

72Mb

2M x 36
4M x 18

2

2.0

Weak/
Strong(Military Temp)

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

350/250350/250*Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.)

No Bus Turnaround
100 QFP

Density

Config

Speed
(MHz)

Pipeline tKQ(ns)

Voltage

GS81302Z36yy-###a
GS81302Z18yy-###a

144Mb

4M x 36
8M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GS8680Z36yy-###a
GS8680Z18yy-###a

72Mb

2M x 36
4M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GS8360Z36yy-###a
GS8360Z18yy-###a

36Mb

1M x 36
2M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GSI P/N

QFP(CQ)*Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.)

Synchronous Burst
100 QFP

Density

Config

Speed
(MHz)

Pipeline tKQ(ns)

Voltage

GS8130236yy-###a
GS8130218yy-###a

144Mb

4M x 36
8M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GS868036yy-###a
GS868018yy-###a

72Mb

2M x 36
4M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GS836036yy-###a
GS836018yy-###a

36Mb

1M x 36
2M x 18333/250(Military Temp)

2.5

VDD—2.5 V/3.3 V
VDDQ—2.5 V/3.3 V•

GSI P/N*Alpha character at the end of the part number denotes qualification nomenclature (S = Engineering Sample; V = Class-V; Q = Class-Q.)

-4-

QFP
(CQ)

In-Place Associative Computing

GSI Technology's New APU Solution

Current Market Solution

GSI Technology’s New APU Solution

GSI Technology is developing a new, patented Associative Processing Unit (APU) that changes the concept ofcomputing from serial data processing—where data is moved back and forth between the processor and memory—
to massive parallel data processing, compute, and search in-place directly in the memory array.
This in-place associative computing technology removes the bottleneck at the I/O between the processor andmemory. Data is accessed by content and processed directly in place in the memory array without having to crossthe I/O. The result is an orders of magnitude performance-over-power ratio improvement compared toconventional methods that use CPU and GPGPU (General Purpose GPU) along with DRAM.
Target applications include memory-bound sparse matrix-vector multiplication, convolutional neural networks,
image detection, signal detection, speech recognition, recommender systems for e-commerce, Natural Language
Processing (NLP), Memory Networks, One/Few-Shot Learning, and data mining tasks such as prediction,
classification, and clustering.
For more information, please contact us at associativecomputing@gsitechnology.com.

-5-

GSI's 4th Generation SigmaQuad™ SRAMs are our highest performance synchronous memories.
They come in a 144Mb density with up to a 1333 MHz operating frequency, and are suitable for avariety of applications, including packet processing and image processing.
SigmaQuad SRAMs are synchronous memories with separate read and write data buses. “Quad”
refers to their ability to transfer 4 beats of data (2 beats per data bus) in a single clock cycle.
GSI Technology IVe customers have access to free SRAM IP Ports for Xilinx FPGAs. Loaner
boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaQuad-IVe™ SRAMs
144Mb SigmaQuad-IVe™ ECCRAM™
Multi-Bank
ConfigBurst
LengthRead
Latency

GS81314LQ36yy-###GS81314LQ18yy-###4M x 36
8M x 18

2

6

GS81314LD36yy-###GS81314LD18yy-###4M x 36
8M x 18

4

6

GSI P/N

ODT

Speed (MHz)

Voltage

260 BGA(GK)•

1333/1200/1066

VDD—1.3 V
VDDQ—1.2 V••

1333/1200/1066

VDD—1.3 V
VDDQ—1.2 V•

Speed (MHz)

Voltage

260 BGA(GK)

Weak/Strong/None

144Mb SigmaQuad-IVe™ ECCRAM™
Single-BankODT

ConfigBurst
LengthRead
Latency

GS81314LQ37yy-###GS81314LQ19yy-###4M x 36
8M x 182

5•933/800

VDD—1.3 V
VDDQ—1.2 V•

GS81314LD37yy-###GS81314LD19yy-###4M x 36
8M x 184

5•933/800

VDD—1.3 V
VDDQ—1.2 V•

GSI P/N

Weak/Strong/None

SigmaQuad-IVe and ECCRAMs are trademarks of GSI Technology.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

-6-

GSI's 3rd Generation SigmaQuad™ SRAMs are high performance memories with a powerfulcombination of capacity and transaction rate capability.
SigmaQuad SRAMs are synchronous memories with separate read and write data buses.
“Quad” refers to their ability to transfer 4 beats of data (2 beats per data bus) in a single clock
cycle.
GSI Technology IIIe customers have access to free SRAM IP Ports for Xilinx FPGAs. Loaner
boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaQuad-IIIe SRAMs
288Mb SigmaQuad-IIIeTM
ConfigBurst
LengthRead
Latency

GS82583EQ36yy-###GS82583EQ18yy-###8M x 36
16M x 18

2

3GS82583ED36yy-###GS82583ED18yy-###8M x 36
16M x 18

4

3

GSI P/N

ODT

Speed (MHz)

Voltage

260 BGA(GK)•

500/450/400

VDD—1.3 V
VDDQ—1.2 V/1.5 V••

675/625/550/500

VDD—1.3 V
VDDQ—1.2 V/1.5 V•

Speed (MHz)

Voltage

260 BGA(GK)

Weak/Strong/None

144Mb SigmaQuad-IIIeTM ECCRAMsTM
ODTConfigBurst
LengthRead
Latency

GS81313LQ36yy-###GS81313LQ18yy-###4M x 36
8M x 182

3•800/714/600

VDD—1.3 V
VDDQ—1.2 V•

GS81313LD36yy-###GS81313LD18yy-###4M x 36
8M x 184

3•

833/714/625

VDD—1.3 V
VDDQ—1.2 V•

Speed (MHz)

Voltage

260 BGA(GK)GSI P/N

Weak/Strong/None

72Mb SigmaQuad-IIIeTM ECCRAMsTM(Rev. B)ODTConfigBurst
LengthRead
Latency

GS8673EQ36Byy-###GS8673EQ18Byy-###2M x 36
4M x 182

3•

675/625/550/500

VDD—1.35 V
VDDQ—1.2 V/1.5 V•

GS8673ED36Byy-###GS8673ED18Byy-###2M x 36
4M x 184

3•

675/625/550/500

VDD—1.35 V
VDDQ—1.2 V/1.5 V•

GSI P/N

Weak/Strong/None

72Mb SigmaQuad-IIIeTM ECCRAMsTM—For Use with the GSI Memory Controller IP(Rev. B)
ConfigBurst
LengthRead
Latency

GS8673EQ36Byy-###S
GS8673EQ18Byy-###S

2M x 36
4M x 182

3GS8673ED36Byy-###S
GS8673ED18Byy-###S

2M x 36
4M x 18

4

3

GSI P/N

ODT

Speed (MHz)

Voltage

260 BGA(GK)•

725/625/550

VDD—1.35 V
VDDQ—1.2 V/1.5 V••

725/625/550

VDD—1.35 V
VDDQ—1.2 V/1.5 V•

Weak/Strong/None

SigmaQuad-IIIe and ECCRAMs are trademarks of GSI Technology.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

-7-

GSI SigmaQuad™ SRAMs are the preferred choice in leading edge applications from data
packet statistics to radar signature processing.
SigmaQuad SRAMs are synchronous memories with separate read and write data buses.
“Quad” refers to their ability to transfer 4 beats of data (2 beats per data bus) in a single clock
cycle.
GSI’s SigmaQuad devices are compatible with all competitor Quad Data Rate SRAMs.
GSI Technology II+ customers have access to free SRAM IP Ports for Xilinx FPGAs. Loaner boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaQuad-II+ and SigmaQuad-II SRAMs
288Mb SigmaQuad-II+TM and SigmaQuad-IITM
ODT
ConfigBurst
LengthRead
Latency

GS82582QT38yy-###GS82582QT20yy-###8M x 36
16M x 182

2.5

GS82582Q38yy-###GS82582Q20yy-###8M x 36
16M x 182

2.5

GS82582DT38yy-###GS82582DT20yy-###8M x 36
16M x 18

4

2.5

GS82582D38yy-###GS82582D20yy-###8M x 36
16M x 18

4

2.5

GS82582QT37yy-###GS82582QT19yy-###8M x 36
16M x 182

2.0GS82582Q37yy-###GS82582Q19yy-###8M x 36
16M x 182

2.0GS82582DT37yy-###GS82582DT19yy-###8M x 36
16M x 184

2.0GS82582D37yy-###GS82582D19yy-###8M x 36
16M x 184

2.0GS82582Q36yy-###GS82582Q18yy-###8M x 36
16M x 182

1.5

GS82582D36yy-###GS82582D18yy-###8M x 36
16M x 18

4

1.5

GSI P/N

165 BGA
13 x 15mm(GD)

15 x 17mm(GE)

Speed (MHz)

Voltage

500/450/400/375

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

500/450/400/375

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

400/375/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

400/375/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

357/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

400/375/333/
300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

Weak/
Strong

Weak/
None

•
•
•
•
•
•
•

SigmaQuad-II and SigmaQuad-II+ products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

-8-SigmaQuad-II+ and SigmaQuad-II SRAMs
144Mb SigmaQuad-II+TM and SigmaQuad-IITM(Rev. A)ODTGSI P/N

ConfigBurst
LengthRead
Latency

GS81302QT38Ayy-###GS81302QT20Ayy-###4M x 36
8M x 18

2

2.5

GS81302Q38Ayy-###GS81302Q20Ayy-###4M x 36
8M x 18

2

2.5

GS81302DT38Ayy-###GS81302DT20Ayy-###4M x 36
8M x 18

4

2.5

GS81302D38Ayy-###GS81302D20Ayy-###4M x 36
8M x 18

4

2.5

GS81302QT37Ayy-###GS81302QT19Ayy-###4M x 36
8M x 18

2

2.0GS81302Q37Ayy-###GS81302Q19Ayy-###4M x 36
8M x 18

2

2.0GS81302DT37Ayy-###GS81302DT19Ayy-###4M x 36
8M x 18

4

2.0

GS81302D37Ayy-###GS81302D19Ayy-###4M x 36
8M x 18

4

2.0

GS81302Q36Ayy-###GS81302Q18Ayy-###4M x 36
8M x 182

1.5

GS81302D36Ayy-###GS81302D18Ayy-###4M x 36
8M x 184

1.5

165 BGA
Speed (MHz)

Voltage

13 x 15mm(GD)

500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

633/550/500/450

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

633/550/500/450

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

400/375/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

400/375/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

Speed (MHz)

Voltage

13 x 15mm(GD)

500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

318/300/250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

318/300/250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

Weak/
Strong

Weak/
None

•
•
•
•
•
•
•

15 x 17mm(GE)

144Mb SigmaQuad-II+TM and SigmaQuad-IITM
ODT
ConfigBurst
LengthRead
Latency

GS81302DT38yy-###GS81302DT20yy-###GS81302DT11yy-###GS81302DT06yy-###4M x 36
8M x 18
16M x 916M x 84

2.5

GS81302D38yy-###GS81302D20yy-###GS81302D11yy-###GS81302D06yy-###4M x 36
8M x 18
16M x 916M x 84

2.5

GS81302QT37yy-###GS81302QT19yy-###GS81302QT10yy-###GS81302QT07yy-###4M x 36
8M x 18
16M x 916M x 82

2.0GS81302Q37yy-###GS81302Q19yy-###GS81302Q10yy-###GS81302Q07yy-###4M x 36
8M x 18
16M x 916M x 82

2.0

GSI P/N

Weak/
Strong165 BGA
Weak/
None

•
•
•
•

SigmaQuad-II and SigmaQuad-II+ products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

-9-15 x 17mm(GE)SigmaQuad-II+ and SigmaQuad-II SRAMs
144Mb SigmaQuad-II+TM and SigmaQuad-IITM(Continued)
ODT
ConfigBurst
LengthRead
Latency

GS81302DT37yy-###GS81302DT19yy-###GS81302DT10yy-###GS81302DT07yy-###4M x 36
8M x 18
16M x 916M x 84

2.0

GS81302D37yy-###GS81302D19yy-###GS81302D10yy-###GS81302D07yy-###4M x 36
8M x 18
16M x 916M x 84

2.0

GS81302Q36yy-###GS81302Q18yy-###GS81302Q09yy-###GS81302Q08yy-###4M x 36
8M x 18
16M x 916M x 82

1.5

GS81302D36yy-###GS81302D18yy-###GS81302D09yy-###GS81302D08yy-###4M x 36
8M x 18
16M x 916M x 84

1.5

GSI P/N

165 BGA
13 x 15mm(GD)

15 x 17mm(GE)

Speed (MHz)

Voltage450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

375/350/333/
300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

Weak/
Strong

Weak/
None

•

72Mb SigmaQuad-II+TM and SigmaQuad-IITM(Rev. B)ODTGSI P/N

ConfigBurst
LengthRead
Latency

GS8662DT38Byy-###GS8662DT20Byy-###GS8662DT11Byy-###GS8662DT06Byy-###2M x 36
4M x 18
8M x 98M x 8

GS8662D38Byy-###GS8662D20Byy-###GS8662D11Byy-###GS8662D06Byy-###2M x 36
4M x 18
8M x 98M x 84

2.5

GS8662QT37Byy-###GS8662QT19Byy-###GS8662QT10Byy-###GS8662QT07Byy-###2M x 36
4M x 18
8M x 98M x 82

2.0GS8662Q37Byy-###GS8662Q19Byy-###GS8662Q10Byy-###GS8662Q07Byy-###2M x 36
4M x 18
8M x 98M x 82

2.0GS8662DT37Byy-###GS8662DT19Byy-###GS8662DT10Byy-###GS8662DT07Byy-###2M x 36
4M x 18
8M x 98M x 84

2.0GS8662D37Byy-###GS8662D19Byy-###GS8662D10Byy-###GS8662D07Byy-###2M x 36
4M x 18
8M x 98M x 8

4

2.0

4

2.5

Weak/
Strong165 BGA
Weak/
None

•
•
•
•
•
•

Speed (MHz)

Voltage

13 x 15mm(GD)

550/500/450/400/350(x18/x36)
500/450/400/350(x8/x9)VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400/350(x18/x36)
500/450/400/350(x8/x9)VDD—1.8 V
VDDQ—1.5 V/1.8 V•

357/333/300/
250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

357/333/300/
250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

SigmaQuad-II and SigmaQuad-II+ products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 10 -

15 x 17mm(GE)SigmaQuad-II+ and SigmaQuad-II SRAMs
72Mb SigmaQuad-II+TM and SigmaQuad-IITM(Rev. B) (Continued)
ODT
ConfigBurst
LengthRead
Latency

GS8662Q36Byy-###GS8662Q18Byy-###GS8662Q09Byy-###GS8662Q08Byy-###2M x 36
4M x 18
8M x 98M x 82GS8662D36Byy-###GS8662D18Byy-###GS8662D09Byy-###GS8662D08Byy-###2M x 36
4M x 18
8M x 98M x 8

4

GSI P/N

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltage

13 x 15
mm
(GD)

1.5

n/a

n/a

357/333/300/250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

1.5

n/a

n/a

400/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

Speed (MHz)

Voltage

13 x 15mm(GD)

550/500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

357/333/300/250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

357/333/300/250/200

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

15 x 17mm(GE)

36Mb SigmaQuad-II+TMand SigmaQuad-IITM(Rev. B)ODTConfigBurst
LengthRead
Latency

GS8342DT38Byy-###GS8342DT20Byy-###GS8342DT11Byy-###GS8342DT06Byy-###1M x 36
2M x 18
4M x 94M x 84

2.5

GS8342D38Byy-###GS8342D20Byy-###GS8342D11Byy-###GS8342D06Byy-###1M x 36
2M x 18
4M x 94M x 84

2.5

GS8342QT37Byy-###GS8342QT19Byy-###GS8342QT10Byy-###GS8342QT07Byy-###1M x 36
2M x 18
4M x 94M x 82

2.0GS8342Q37Byy-###GS8342Q19Byy-###GS8342Q10Byy-###GS8342Q07Byy-###1M x 36
2M x 18
4M x 94M x 82

2.0GS8342DT37Byy-###GS8342DT19Byy-###GS8342DT10Byy-###GS8342DT07Byy-###1M x 36
2M x 18
4M x 94M x 84

2.0GS8342D37Byy-###GS8342D19Byy-###GS8342D10Byy-###GS8342D07Byy-###1M x 36
2M x 18
4M x 94M x 84

2.0

GSI P/N

Weak/
Strong165 BGA
Weak/
None

•
•
•
•
•
•

SigmaQuad-II and SigmaQuad-II+ products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 11 -

15 x 17mm(GE)SigmaQuad-II+ and SigmaQuad-II SRAMs
36Mb SigmaQuad-II+TMand SigmaQuad-IITM(Rev. B) (Continued)
ODT
ConfigBurst
LengthRead
Latency

GS8342Q36Byy-###GS8342Q18Byy-###GS8342Q09Byy-###GS8342Q08Byy-###1M x 36
2M x 18
4M x 94M x 82GS8342D36Byy-###GS8342D18Byy-###GS8342D09Byy-###GS8342D08Byy-###1M x 36
2M x 18
4M x 94M x 8

4

GSI P/N

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltage

13 x 15
mm
(GD)

1.5

n/a

n/a

357/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

1.5

n/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

Speed (MHz)

Voltage

13 x 15mm(GD)

15 x 17mm(GE)

18Mb SigmaQuad-II+TMand SigmaQuad-IITM(Rev. B)ODTConfigBurst
LengthRead
Latency

GS8182D37Byy-###GS8182D19Byy-###512K x 36
1M x 18

4

GS8182Q36Byy-###GS8182Q18Byy-###GS8182Q09Byy-###GS8182Q08Byy-###512K x 36
1M x 18
2M x 92M x 8

GS8182D36Byy-###GS8182D18Byy-###GS8182D09Byy-###GS8182D08Byy-###512K x 36
1M x 18
2M x 92M x 8

GSI P/N

165 BGA

Weak/
Strong

Weak/
None

2.0

n/a

n/a

435/400/
375/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

2

1.5

n/a

n/a

333/300/250/
200/167/133

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

4

1.5

n/a

n/a

400/375/333/300/250/
200/167

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

15 x 17mm(GE)

SigmaQuad-II and SigmaQuad-II+ products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

SigmaQuad SRAMs
18Mb SigmaQuadTM(Rev. B)ODTGSI P/N

ConfigBurst
Length

GS8180QV36Byy-###GS8180QV18Byy-###512K x 36
1M x 182

Read
Latency

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltage

13 x 15
mm
(GD)

n/a

n/a

200/167

VDD—2.5 V
VDDQ—1.5 V/1.8 V•

SigmaQuadTM-II and SigmaDDRTM-II products are pin and function compatible with QDR-IITM and QDR-II+TM products, respectively.
SigmaQuad, SigmaQuad-II, and SigmaQuad-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 12 -

15 x 17mm(GE)

GSI's 4th Generation SigmaDDR™ SRAMs are our highest performance synchronous
memories. They come in a 144Mb density with up to a 1333 MHz operating frequency,
and are suitable for a variety of applications, including packet processing and image
processing.
SigmaDDR SRAMs are synchronous memories with a common read and write databus. “DDR” refers to their ability to transfer 2 beats of data on the data bus in a single
clock cycle.
GSI Technology IVe customers have access to free SRAM IP Ports for Xilinx FPGAs. Loaner boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaDDR-IVe™ SRAMs
144Mb SigmaDDR-IVe™ ECCRAM™
Multi-Bank
GSI P/N
GS81314LT36yy-###GS81314LT18yy-###ConfigBurst
LengthRead
Latency

4M x 36
8M x 18

2

6

ODT
Weak/Strong/None•

Speed (MHz)

Voltage

260 BGA(GK)

1333/1200/1066

VDD—1.3 V
VDDQ—1.2 V•

Speed (MHz)

Voltage

260 BGA(GK)

933/833

VDD—1.3 V
VDDQ—1.2 V•

144Mb SigmaDDR-IVe™ ECCRAM™
Single-Bank
GSI P/N
GS81314LT37yy-###GS81314LT19yy-###ConfigBurst
LengthRead
Latency

4M x 36
8M x 18

2

5

ODT
Weak/Strong/None•

SigmaQuad-IVe and ECCRAMs are trademarks of GSI Technology.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 13 -

GSI's 3rd Generation SigmaDDR™ SRAMs are high performance memories with apowerful combination of capacity and transaction rate capability.
SigmaDDR SRAMs are synchronous memories with a common read and write data bus.
“DDR” refers to their ability to transfer 2 beats of data on the data bus in a single clock
cycle.
GSI Technology IIIe customers have access to free SRAM IP Ports for Xilinx FPGAs.
Loaner boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaDDR-IIIe SRAMs
288Mb SigmaDDR-IIIe™
GSI P/N
GS82583ET36yy-###GS82583ET18yy-###ConfigBurst
LengthRead
Latency

8M x 36
16M x 18

2

3

ODT
Weak/Strong/None•

Speed (MHz)

Voltage

260 BGA(GK)

675/625/550/500

VDD—1.3 V
VDDQ—1.2 V/1.5 V•

Speed (MHz)

Voltage

260 BGA(GK)

833/714/625

VDD—1.3 V
VDDQ—1.2 V•

Speed (MHz)

Voltage

260 BGA(GK)

675/625/550/500

VDD—1.35 V
VDDQ—1.2 V/1.5 V•

144Mb SigmaDDR-IIIeTM ECCRAMsTM
GSI P/N
GS81313LT36yy-###GS81313LT18yy-###ConfigBurst
LengthRead
Latency

4M x 36
8M x 18

2

3

ODT
Weak/Strong/None•

72Mb SigmaDDR-IIIe™ ECCRAMsTM(Rev. B)
GSI P/N
GS8673ET36Byy-###GS8673ET18Byy-###ConfigBurst
LengthRead
Latency

2M x 36
4M x 18

2

3

ODT
Weak/Strong/None•

72Mb SigmaDDR-IIIe™ ECCRAMsTM—For Use with the GSI Memory Controller IP(Rev. B)
GSI P/N
GS8673ET36Byy-###S
GS8673ET18Byy-###S

ConfigBurst
LengthRead
Latency

2M x 36
4M x 18

2

3

ODT
Weak/Strong/None

Speed (MHz)

Voltage

260 BGA(GK)

725/625/550

VDD—1.35 V
VDDQ—1.2 V/1.5 V••

SigmaDDR-IIIe and ECCRAMs are trademarks of GSI Technology.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 14 -

GSI SigmaDDR™ SRAMs are the preferred choice in leading edge applications from data
packet statistics to radar signature processing.
SigmaDDR SRAMs are synchronous memories with a common read and write data bus.
“DDR” refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle.
GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
GSI Technology II+ customers have access to free SRAM IP Ports for Xilinx FPGAs. Loaner boards are available.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

SigmaDDR-II+ and SigmaDDR-II SRAMs
288Mb SigmaDDR-II+TM
ODTConfigBurst
LengthRead
Latency

GS82582TT38yy-###GS82582TT20yy-###8M x 36
16M x 182

2.5

GS82582T38yy-###GS82582T20yy-###8M x 36
16M x 182

2.5

GS82582TT37yy-###GS82582TT19yy-###8M x 36
16M x 182

2.0GS82582T37yy-###GS82582T19yy-###8M x 36
16M x 18

2

2.0

GSI P/N

Weak/
Strong165 BGA
Weak/
None

•
•
•
•

13 x 15mm(GD)

15 x 17mm(GE)

Speed (MHz)

Voltage

550/500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/375/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

144Mb SigmaDDR-II+TM(Rev. A)ODTGSI P/N

ConfigBurst
LengthRead
Latency

GS81302TT38Ayy-###GS81302TT20Ayy-###4M x 36
8M x 18

2

2.5

GS81302T38Ayy-###GS81302T20Ayy-###4M x 36
8M x 18

2

2.5

GS81302TT37Ayy-###GS81302TT19Ayy-###4M x 36
8M x 18

2

2.0GS81302T37Ayy-###GS81302T19Ayy-###4M x 36
8M x 18

2

2.0

Weak/
Strong165 BGA
Weak/
None

•
•
•
•

Speed (MHz)

Voltage

13 x 15mm(GD)

633/550/500/450

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

633/550/500/450

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

SigmaDDR-II and SigmaDDR-II+ products are pin and function compatible with DDR II CIOTM and DDR II+ CIOTM products, respectively.
SigmaDDR-II and SigmaDDR-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 15 -

15 x 17mm(GE)SigmaDDR-II+ and SigmaDDR-II SRAMs
144Mb SigmaDDR-II+TMand SigmaDDR-IITM
ODT
ConfigBurst
LengthRead
Latency

GS81302TT38yy-###GS81302TT20yy-###GS81302TT11yy-###GS81302TT06yy-###4M x 36
8M x 18
16M x 916M x 82

2.5

GS81302T38yy-###GS81302T20yy-###GS81302T11yy-###GS81302T06yy-###4M x 36
8M x 18
16M x 916M x 82

2.5

GS81302TT37yy-###GS81302TT19yy-###GS81302TT10yy-###GS81302TT07yy-###4M x 36
8M x 18
16M x 916M x 82

2.0GS81302T37yy-###GS81302T19yy-###GS81302T10yy-###GS81302T07yy-###4M x 36
8M x 18
16M x 916M x 82

2.0GS81302T36yy-###GS81302T18yy-###GS81302T09yy-###GS81302T08yy-###4M x 36
8M x 18
16M x 916M x 82

1.5

GS81302R36yy-###GS81302R18yy-###GS81302R09yy-###GS81302R08yy-###4M x 36
8M x 18
16M x 916M x 84

1.5

GSI P/N

165 BGA
13 x 15mm(GD)

15 x 17mm(GE)

Speed (MHz)

Voltage

500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

375/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

375/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

Weak/
Strong

Weak/
None

•
•
•

72Mb SigmaDDR-II+TMand SigmaDDR-IITM(Rev. B)ODTGSI P/N

ConfigBurst
LengthRead
Latency

GS8662TT38Byy-###GS8662TT20Byy-###GS8662TT11Byy-###GS8662TT06Byy-###2M x 36
4M x 18
8M x 98M x 82

2.5

GS8662T38Byy-###GS8662T20Byy-###GS8662T11Byy-###GS8662T06Byy-###2M x 36
4M x 18
8M x 98M x 82

2.5

GS8662TT37Byy-###GS8662TT19Byy-###GS8662TT10Byy-###GS8662TT07Byy-###2M x 36
4M x 18
8M x 98M x 82

2.0GS8662T37Byy-###GS8662T19Byy-###GS8662T10Byy-###GS8662T07Byy-###2M x 36
4M x 18
8M x 98M x 8

2

2.0

Weak/
Strong165 BGA
Weak/
None

•
•
•
•

Speed (MHz)

Voltage

13 x 15mm(GD)

550/500/450/400/350(x18/x36)
500/450/400/350(x8/x9)VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400/350(x18/x36)
500/450/400/350(x8/x9)VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

SigmaDDR-II and SigmaDDR-II+ products are pin and function compatible with DDR II CIOTM and DDR II+ CIOTM products, respectively.
SigmaDDR-II and SigmaDDR-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 16 -

15 x 17mm(GE)SigmaDDR-II+ and SigmaDDR-II SRAMs
72Mb SigmaDDR-II+TMand SigmaDDR-IITM(Rev. B) (Continued)
ODT
ConfigBurst
LengthRead
Latency

GS8662T36Byy-###GS8662T18Byy-###GS8662T09Byy-###GS8662T08Byy-###2M x 36
4M x 18
8M x 98M x 82GS8662R36Byy-###GS8662R18Byy-###GS8662R09Byy-###GS8662R08Byy-###2M x 36
4M x 18
8M x 98M x 8

4

GSI P/N

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltage

13 x 15
mm
(GD)

1.5

n/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

1.5

n/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

Speed (MHz)

Voltage

13 x 15mm(GD)

550/500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

550/500/450/400/350

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V••

450/400/350/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

15 x 17mm(GE)

36Mb SigmaDDR-II+TMand SigmaDDR-IITM(Rev. B)ODT165 BGA

ConfigBurst
LengthRead
Latency

GS8342TT38Byy-###GS8342TT20Byy-###GS8342TT11Byy-###GS8342TT06Byy-###1M x 36
2M x 18
4M x 94M x 82

2.5

GS8342T38Byy-###GS8342T20Byy-###GS8342T11Byy-###GS8342T06Byy-###1M x 36
2M x 18
4M x 94M x 82

2.5

GS8342TT37Byy-###GS8342TT19Byy-###GS8342TT10Byy-###GS8342TT07Byy-###1M x 36
2M x 18
4M x 94M x 82

2.0GS8342T37Byy-###GS8342T19Byy-###GS8342T10Byy-###GS8342T07Byy-###1M x 36
2M x 18
4M x 94M x 82

2.0GS8342T36Byy-###GS8342T18Byy-###GS8342T09Byy-###GS8342T08Byy-###1M x 36
2M x 18
4M x 94M x 8

2

1.5

n/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

GS8342R36Byy-###GS8342R18Byy-###GS8342R09Byy-###GS8342R08Byy-###1M x 36
2M x 18
4M x 94M x 8

4

1.5

n/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V•

GSI P/N

Weak/
Strong

Weak/
None

•
•
•

SigmaDDR-II and SigmaDDR-II+ products are pin and function compatible with DDR II CIOTM and DDR II+ CIOTM products, respectively.
SigmaDDR-II and SigmaDDR-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 17 -

15 x 17mm(GE)SigmaDDR-II+ and SigmaDDR-II SRAMs
18Mb SigmaDDR-II+TMand SigmaDDR-IITM(Rev. B)ODTConfigBurst
LengthRead
Latency

GS8182T37Byy-###GS8182T19Byy-###512K x 36
1M x 18

2

GS8182T36Byy-###GS8182T18Byy-###GS8182T09Byy-###GS8182T08Byy-###512K x 36
1M x 18
2M x 92M x 8

GS8182R36Byy-###GS8182R18Byy-###GS8182R09Byy-###GS8182R08Byy-###512K x 36
1M x 18
2M x 92M x 8

GSI P/N

165 BGA
Speed (MHz)

Voltage

13 x 15
mm
(GD)

n/a

435/400/
375/333/300

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

400/375/333/300/
250/200/167

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

n/a

n/a

400/375/333/300/
250/200/167

VDD—1.8 V
VDDQ—1.5 V/1.8 V

•

Weak/
Strong

Weak/
None

2.0

n/a

2

1.5

4

1.5

SigmaDDR-II and SigmaDDR-II+ products are pin and function compatible with DDR II CIOTM and DDR II+ CIOTM products, respectively.
SigmaDDR-II and SigmaDDR-II+ are trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 18 -

15 x 17mm(GE)SigmaSIO DDR-II SRAMs
288Mb SigmaSIO DDR-IITM
ODT
GSI P/N

GS82582S36yy-###GS82582S18yy-###ConfigBurst
LengthRead
Latency

8M x 36
16M x 182

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltagen/a

n/a

400/375/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

13 x 15mm(GD)

15 x 17mm(GE)•

144Mb SigmaSIO DDR-IITM(Rev. A)ODTGSI P/N

GS81302S36Ayy-###GS81302S18Ayy-###ConfigBurst
LengthRead
Latency

4M x 36
8M x 182

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltagen/a

n/a

400/375/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

13 x 15mm(GD)

15 x 17mm(GE)•

144Mb SigmaSIO DDR-IITM
ODT
GSI P/N
GS81302S36yy-###GS81302S18yy-###GS81302S09yy-###GS81302S08yy-###ConfigBurst
LengthRead
Latency

4M x 36
8M x 18
16M x 916M x 82

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltagen/an/a

375/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

13 x 15mm(GD)

15 x 17mm(GE)•

72Mb SigmaSIO DDR-IITM(Rev. B)ODTGSI P/N
GS8662S36Byy-###GS8662S18Byy-###GS8662S09Byy-###GS8662S08Byy-###ConfigBurst
LengthRead
Latency

2M x 36
4M x 18
8M x 98M x 82

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltagen/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

13 x 15mm(GD)

15 x 17mm(GE)•

36Mb SigmaSIO DDR-IITM(Rev. B)ODTGSI P/N
GS8342S36Byy-###GS8342S18Byy-###GS8342S09Byy-###GS8342S08Byy-###ConfigBurst
LengthRead
Latency

1M x 36
2M x 18
4M x 94M x 82

1.5

165 BGA

Weak/
StrongWeak/
None

Speed (MHz)

Voltagen/a

n/a

400/350/333/300/250

VDD—1.8 V
VDDQ—1.5 V/1.8 V

13 x 15mm(GD)

15 x 17mm(GE)•

18Mb SigmaSIO DDR-IITM(Rev. B)ODTGSI P/N
GS8182S36Byy-###GS8182S18Byy-###GS8182S09Byy-###GS8182S08Byy-###ConfigBurst
LengthRead
Latency

512K x 36
1M x 18
2M x 92M x 82

1.5

165 BGA

Weak/
Strong

Weak/
None

n/a

n/a

Speed (MHz)

Voltage

400/375/333/300/250/
200/167

VDD—1.8 V
VDDQ—1.5 V/1.8 V

SigmaSIO DDR-IITM products are pin and function compatible with DDR II SIOTM products.
SigmaSIO DDR-II is a trademarks of GSI Technology.
All other trademarks belong to their respective holders.

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator

All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 19 -

13 x 15mm(GD)•

15 x 17mm(GE)

GSI NoBusTurnaround™ (NBT) SRAMs have been the workhorses for midrange dataacquisition designs for over 15 years and are available in a huge assortment of densities,
packages and design options. These SRAMs also come with the best long-term memory
IC support plan in the business.
NBT SRAMs are synchronous, burst-capable memories with a simplified interface that isdesigned to use a data bus’s maximum bandwidth. NBT devices do not require“turnaround” cycles (idle clock cycles between a read and write operation).
NBT SRAMs are used in networking, industrial, automotive and medical imaging applications where a mid-range
performance point (typically a 333–166 MHz clock rate) is required.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

No Bus Turnaround (NBTTM) SRAMs
288Mb (2-Die Module)
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

JTAG

FLXDrive™

GS82564Z36yy-###GS82564Z18yy-###8M x 36
16M x 18

400/333/
250/200

2.5–3.0

2.5/3.3

• •

•

•

•

GS82564Z36yy-###V
GS82564Z18yy-###V

8M x 36
16M x 18333/
250/200

2.5–3.0

1.8/2.5

• •

•

•

•

144Mb
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

• •

FT/PL

JTAG

FLXDrive™

•••

GS81282Z36yy-###GS81282Z18yy-###4M x 36
8M x 18

400/333/
250/200

2.5–3.0

2.5/3.3

GS81280FZ36yy-###GS81280FZ18yy-###4M x 36
8M x 18

6.5 (ns)

n/a

2.5/3.3•

FT Only

GS81280Z36yy-###GS81280Z32yy-###GS81280Z18yy-###4M x 36
4M x 32
8M x 18

400/333/
250/200

2.5–3.0

2.5/3.3•••

GS81282Z36yy-###V
GS81282Z18yy-###V

4M x 36
8M x 18333/
250/200

2.5–3.0

1.8/2.5••

GS81280Z36yy-###V
GS81280Z32yy-###V
GS81280Z18yy-###V

4M x 36
4M x 32
8M x 18333/
250/200

2.5–3.0

2.5/3.3••• •Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 20 -••

No Bus Turnaround (NBTTM) SRAMs (Continued)
72Mb
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

Features
FT/PL

JTAG

FLXDrive™

•••

GS8642Z72yy-###GS8642Z36yy-###GS8642Z18yy-###1M x 72
2M x 36
4M x 18300/250/200/167

2.3–3.5

2.5/3.3

GS8640FZ36yy-###GS8640FZ32yy-###GS8640FZ18yy-###2M x 36
2M x 32
4M x 18

6.5 (ns)

n/a

2.5/3.3•

FT Only

GS8640Z36yy-###GS8640Z32yy-###GS8640Z18yy-###2M x 36
2M x 32
4M x 18300/250/200/167

2.3–3.5

2.5/3.3•••

GS8644Z36yy-###GS8644Z18yy-###2M x 36
4M x 18

250/225/200/
166/150/133

2.5–4.0

2.5/3.3•••

GS8642Z72yy-###V
GS8642Z36yy-###V
GS8642Z18yy-###V

1M x 72
2M x 36
4M x 18

250/200/167

3.0–3.5

1.8/2.5•••

GS864036yy-###V
GS864032yy-###V
GS864018yy-###V

2M x 36
2M x 32
4M x 18

250/200/167

3.0–3.5

1.8/2.5••

GS864436yy-###V
GS864418yy-###V

2M x 36
4M x 18

250/225/200/
166/150/133

2.5–4.0

1.8/2.5

•

•

•

•

•
•

•
•
•

•

36Mb
(Rev. A)
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

Features
FT/PL

JTAG

FLXDrive™

•

GS8322Z36Ayy-###GS8322Z18Ayy-###1M x 36
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3• •••GS8321Z36Ayy-###GS8321Z32Ayy-###GS8321Z18Ayy-###1M x 36
1M x 32
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3•••

GS8320Z36Ayy-###GS8320Z18Ayy-###1M x 36
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3

GS8322Z36Ayy-###V
GS8322Z18Ayy-###V

1M x 36
2M x 18333/250/200/150

3.0–3.8

1.8/2.5• •••GS8321Z36Ayy-###V
GS8321Z32Ayy-###V
GS8321Z18Ayy-###V

1M x 36
1M x 32
2M x 18333/250/200/150

3.0–3.8

1.8/2.5•••

GS8320Z36Ayy-###V
GS8320Z18Ayy-###V

1M x 36
2M x 18333/250/200/150

3.0–3.8

1.8/2.5••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 21 -•••

No Bus Turnaround (NBTTM) SRAMs (Continued)
36Mb(Original Rev.)
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

Features
FT/PL

JTAG

FLXDrive™

GS8322Z72yy-###512K x 72

250/225/200/166/
150/133

3.0–4.0

2.5/3.3

•

•

•

•

GS8322Z72yy-###V

512K x 72

250/225/200/166/
150/133

3.0–4.0

1.8/2.5

•

•

•

•

18Mb
(Rev. D)
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

GS8162Z36Dyy-###GS8162Z18Dyy-###512K x 36
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3• •GS8161Z36Dyy-###GS8161Z32Dyy-###GS8161Z18Dyy-###512K x 36
512K x 32
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3•

GS8160Z36Dyy-###GS8160Z18Dyy-###512K x 36
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3

GS8162Z36Dyy-###V
GS8162Z18Dyy-###V

512K x 36
1M x 18333/250/200/150

3.0–3.8

1.8/2.5• •GS8161Z36Dyy-###V
GS8161Z32Dyy-###V
GS8161Z18Dyy-###V

512K x 36
512K x 32
1M x 18333/250/200/150

3.0–3.8

1.8/2.5•

GS8160Z36Dyy-###V
GS8160Z18Dyy-###V

512K x 36
1M x 18333/250/200/150

3.0–3.8

1.8/2.5

Features
FT/PL

JTAG

FLXDrive™

•

•

•

•

•

•

•

•
•

•

•

•

•

•

•

•

18Mb
(Rev. C)
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

Features
FT/PL

JTAG

FLXDrive™

GS8162Z72Cyy-###256K x 72

333/300/250/
200/150

2.8–3.8

2.5/3.3

•

•

•

•

GS8162Z72Cyy-###V

256K x 72

250/200/150

3.0–3.8

1.8/2.5

•

•

•

•

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 22 -

No Bus Turnaround (NBTTM) SRAMs (Continued)
9Mb(Rev. C)
Packages
GSI P/N

Config

Speed
(MHz)

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA

TQFP

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

GS882Z36Cyy-###GS882Z18Cyy-###256K x 36
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3• •GS881Z36Cyy-###GS881Z32Cyy-###GS881Z18Cyy-###256K x 36
256K x 32
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3•

GS880Z36Cyy-###GS880Z18Cyy-###256K x 36
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3

GS882Z36Cyy-###V
GS882Z18Cyy-###V

256K x 36
512K x 18

250/200/150

3.0–3.8

1.8/2.5• •GS881Z36Cyy-###V
GS881Z32Cyy-###V
GS881Z18Cyy-###V

256K x 36
256K x 32
512K x 18

250/200/150

3.0–3.8

1.8/2.5•

GS880Z36Cyy-###V
GS880Z18Cyy-###V

256K x 36
512K x 18

250/200/150

3.0–3.8

1.8/2.5

Features
FT/PL

JTAG

FLXDrive™

•

•

•

•

•

•

•

•
•

•

•

•

•

•

•

•

4Mb
(Rev. C)
Packages
GSI P/N

ConfigPipeline
tKQ
(ns)

Speed
(MHz)

VDD

BGA

TQFP

VDDQ

119
165
165
209
(GB) (GD) (GE) (GC)

100
(GT)

•

&

Features
FT/PL

JTAG

FLXDrive™

•

•

•

•

GS842Z36Cyy-###GS842Z18Cyy-###128K x 36
256K x 18

250/200/166/
150/100

3.2–4.5

3.3
2.5/3.3

GS841Z36Cyy-###GS841Z18Cyy-###128K x 36
256K x 18

250/200/166/
150/100

3.2–4.5

3.3
2.5/3.3••

GS840Z36Cyy-###GS840Z18Cyy-###128K x 36
256K x 18

250/200/166/
150/100

3.2–4.5

3.3
2.5/3.3••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended, Automotive, or Military temperature option parts.

- 23 -

GSI SyncBurst™ SRAMs have been the workhorses for midrange data acquisition designs for over
15 years and are available in a huge assortment of densities, packages and design options. These
SRAMs also come with the best long-term memory IC support plan in the business. SyncBurst
SRAMs provide a “burst” of 2 to 4 words in response to a single clock signal.
SyncBurst SRAMs are used in networking, industrial, automotive and medical imaging
applications where a mid-range performance point (typically a 333–166 MHz clock rate) is
required.
*GSI offers all products in lead-free (6/6 RoHS compliant) packages; therefore, only these products are listed. Leaded (5/6 RoHS-compliant) packages are still available for our
65nm and 90nm product families. Please contact your local sales representative if you are interested in a 5/6 part.

Synchronous Burst (SyncBurstTM) SRAMs
288Mb (2-Die Module)
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

GS8256436yy-###GS8256418yy-###8M x 36
16M x 18

400/333/
250/200

2.5–3.0

2.5/3.3

GS8256436yy-###V
GS8256418yy-###V

8M x 36
16M x 18333/
250/200

2.5–3.0

1.8/2.5

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

• •
• •

FT/PL

SCD

•
•

DCD

JTAG

FLXDrive™

•
•

•
•

•
•

144Mb
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

• •

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

•

GS8128236yy-###GS8128218yy-###4M x 36
8M x 18

400/333/
250/200

2.5–3.0

2.5/3.3

GS81280E36yy-###GS81280E32yy-###GS81280E18yy-###4M x 36
4M x 32
8M x 18

400/333/
250/200

2.5–3.0

2.5/3.3••

GS81280F36yy-###GS81280F18yy-###4M x 36
8M x 18

6.5 (ns)

n/a

2.5/3.3

•

FT
Only

GS8128036yy-###GS8128032yy-###GS8128018yy-###4M x 36
4M x 32
8M x 18

400/333/
250/200

2.5–3.0

2.5/3.3•••

GS8128236yy-###V
GS8128218yy-###V

4M x 36
8M x 18333/
250/200

2.5–3.0

1.8/2.5••

GS81280E36yy-###V
GS81280E32yy-###V
GS81280E18yy-###V

4M x 36
4M x 32
8M x 18333/
250/200

2.5–3.0

2.5/3.3••

GS8128036yy-###V
GS8128032yy-###V
GS8128018yy-###V

4M x 36
4M x 32
8M x 18333/
250/200

2.5–3.0

2.5/3.3

•

•

• •

•

•
•

•

72Mb
GSI P/N

GS864272yy-###GS864236yy-###GS864218yy-###Config

1M x 72
2M x 36
4M x 18

Speed
(MHz)

300/250/200/
167

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

2.3–3.5

2.5/3.3

BGA
119
(GB)

165
(GD)

•

165
(GE)

Features

TQFP
209
(GC)

•

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 24 -

Synchronous Burst (SyncBurstTM) SRAMs (Continued)
72Mb(Continued)
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

GS8640E36yy-###GS8640E32yy-###GS8640E18yy-###2M x 36
2M x 32
4M x 18300/250/200/
167

2.3–3.5

2.5/3.3••

GS8640F36yy-###GS8640F32yy-###GS8640F18yy-###2M x 36
2M x 32
4M x 18

6.5 (ns)

n/a

2.5/3.3

•

FT
Only

GS864036yy-###GS864032yy-###GS864018yy-###2M x 36
2M x 32
4M x 18300/250/200/
167

2.3–3.5

2.5/3.3•••

GS864436yy-###GS864418yy-###2M x 36
4M x 18

250/225/200/
166/150/133

2.5–4.0

2.5/3.3

•

•

•

•

•

GS864272yy-###V
GS864236yy-###V
GS864218yy-###V

1M x 72
2M x 36
4M x 18

250/200/167

3.0–3.5

1.8/2.5

•

•

•

•

•

GS8640E36yy-###V
GS8640E32yy-###V
GS8640E18yy-###V

2M x 36
2M x 32
4M x 18

250/200/167

3.0–3.5

1.8/2.5••

GS864036yy-###V
GS864032yy-###V
GS864018yy-###V

2M x 36
2M x 32
4M x 18

250/200/167

3.0–3.5

1.8/2.5•••

GS864436yy-###V
GS864418yy-###V

2M x 36
4M x 18

250/225/200/
166/150/133

2.5–4.0

1.8/2.5

•

•

•

•

•
•

•

•

•

•
•

36Mb
(Rev. A)

GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

GS832236Ayy-###GS832218Ayy-###1M x 36
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3• ••GS8321E36Ayy-###GS8321E32Ayy-###GS8321E18Ayy-###1M x 36
1M x 32
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

GS832136Ayy-###GS832132Ayy-###GS832118Ayy-###1M x 36
1M x 32
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

GS8320E36Ayy-###GS8320E32Ayy-###GS8320E18Ayy-###1M x 36
1M x 32
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

GS8320F36Ayy-###GS8320F32Ayy-###GS8320F18Ayy-###1M x 36
1M x 32
2M x 18

6.5 (ns)

n/a

2.5/3.3

•

FT
Only

GS832036Ayy-###GS832032Ayy-###GS832018Ayy-###1M x 36
1M x 32
2M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 25 -•••

Synchronous Burst (SyncBurstTM) SRAMs (Continued)
36Mb(Rev. A) (Continued)

GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

GS832236Ayy-###V
GS832218Ayy-###V

1M x 36
2M x 18333/250/200/
150

3.0–3.8

1.8/2.5• ••GS8321E36Ayy-###V
GS8321E32Ayy-###V
GS8321E18Ayy-###V

1M x 36
1M x 32
2M x 18333/250/200/
150

3.0–3.8

1.8/2.5••

GS832136Ayy-###V
GS832132Ayy-###V
GS832118Ayy-###V

1M x 36
1M x 32
2M x 18333/250/200/
150

3.0–3.8

1.8/2.5••

GS8320E36Ayy-###V
GS8320E32Ayy-###V
GS8320E18Ayy-###V

1M x 36
1M x 32
2M x 18333/250/200/
150

3.0–3.8

1.8/2.5••

GS832036Ayy-###V
GS832032Ayy-###V
GS832018Ayy-###V

1M x 36
1M x 32
2M x 18333/250/200/
150

3.0–3.8

1.8/2.5

•

•

•
•
•

36Mb
(Original Rev.)
GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

GS832272yy-###512K x 72

250/225/200/
166/150/133

3.0–4.0

2.5/3.3

GS832272yy-###V

512K x 72

250/225/200/
166/150/133

3.0–4.0

1.8/2.5

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

•
•

FT/PL

SCD

DCD

JTAG

FLXDrive™

•
•

•
•

•
•

•
•

•
•

18Mb
(Rev. D)

GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

•

GS816236Dyy-###GS816218Dyy-###512K x 36
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3• •GS8161E36Dyy-###GS8161E32Dyy-###GS8161E18Dyy-###512K x 36
512K x 32
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3•••

GS816136Dyy-###GS816132Dyy-###GS816118Dyy-###512K x 36
512K x 32
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3•••

GS8160E36Dyy-###GS8160E32Dyy-###GS8160E18Dyy-###512K x 36
512K x 32
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

GS8160F36Dyy-###GS8160F32Dyy-###GS8160F18Dyy-###512K x 36
512K x 32
1M x 18

6.5/7.5 (ns)n/a2.5/3.3

•

FT
Only

GS816036Dyy-###GS816032Dyy-###GS816018Dyy-###512K x 36
512K x 32
1M x 18

400/375/333/
250/200/150

2.5–3.8

2.5/3.3••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 26 -•••

Synchronous Burst (SyncBurstTM) SRAMs (Continued)
18Mb(Rev. D) (Continued)

GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

•

GS816236Dyy-###V
GS816218Dyy-###V

512K x 36
1M x 18333/250/200/
150

3.0–3.8

1.8/2.5• •GS8161E36Dyy-###V
GS8161E32Dyy-###V
GS8161E18Dyy-###V

512K x 36
512K x 32
1M x 18333/250/200/
150

3.0–3.8

1.8/2.5•••

GS816136Dyy-###V
GS816132Dyy-###V
GS816118Dyy-###V

512K x 36
512K x 32
1M x 18333/250/200/
150

3.0–3.8

1.8/2.5•••

GS8160E36Dyy-###V
GS8160E32Dyy-###V
GS8160E18Dyy-###V

512K x 36
512K x 32
1M x 18333/250/200/
150

3.0–3.8

1.8/2.5••

GS816036Dyy-###V
GS816032Dyy-###V
GS816018Dyy-###V

512K x 36
512K x 32
1M x 18333/250/200/
150

3.0–3.8

1.8/2.5

•

•

•
•
•

18Mb
(Rev. C)GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

GS816272Cyy-###256K x 72

333/300/250/
200/150

2.8–3.8

2.5/3.3

GS816272Cyy-###V

256K x 72

250/200/150

3.0–3.8

1.8/2.5

GS816273Cyy-###256K x 72

333/300/250/
200/150

2.3–2.5

2.5/3.3

GS816273Cyy-###V

256K x 72

250/200/150

2.5

1.8/2.5

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

•
•
•
•

FT/PL

SCD

DCD

JTAG

FLXDrive™

•
•

•
•
•
•

•
•
•
•

•
•
•
•

•
•
•
•

PL
Only
PL
Only

9Mb
(Rev. C)GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

•

GS88236Cyy-###GS88218Cyy-###256K x 36
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3• •GS881E36Cyy-###GS881E32Cyy-###GS881E18Cyy-###256K x 36
256K x 32
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3•••

GS88136Cyy-###GS88132Cyy-###GS88118Cyy-###256K x 36
256K x 32
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3•••

GS880E36Cyy-###GS880E32Cyy-###GS880E18Cyy-###256K x 36
256K x 32
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 27 -••

Synchronous Burst (SyncBurstTM) SRAMs (Continued)
9Mb(Rev. C) (Continued)

GSI P/N

Config

Speed
(MHz)

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

100
(GT)

FT/PL

SCD

GS880F36Cyy-###GS880F32Cyy-###GS880F18Cyy-###256K x 36
256K x 32
512K x 18

4.5/5/5.5/
6.5/7.5 (ns)n/a2.5/3.3

•

FT
Only

•

GS88036Cyy-###GS88032Cyy-###GS88018Cyy-###256K x 36
256K x 32
512K x 18

333/300/250/
200/150

2.5–3.8

2.5/3.3•••

GS88237Cyy-###256K x 36

333/300/250/
200

2.0–2.7

2.5/3.3

PL
Only

GS88037Cyy-###256K x 36

333/300/250/
200

2.0–2.7

2.5/3.3

GS88236Cyy-###V
GS88218Cyy-###V

256K x 36
512K x 18

250/200/150

3.0–3.8

1.8/2.5

• •

•
•
•

GS881E36Cyy-###V
GS881E32Cyy-###V
GS881E18Cyy-###V

256K x 36
256K x 32
512K x 18

250/200/150

3.0–3.8

1.8/2.5•••

GS88136Cyy-###V
GS88132Cyy-###V
GS88118Cyy-###V

256K x 36
256K x 32
512K x 18

250/200/150

3.0–3.8

1.8/2.5•••

GS880E36Cyy-###V
GS880E32Cyy-###V
GS880E18Cyy-###V

256K x 36
256K x 32
512K x 18

250/200/150

3.0–3.8

1.8/2.5••

GS880F36Cyy-###V
GS880F32Cyy-###V
GS880F18Cyy-###V

256K x 36
256K x 32
512K x 18

5.5/6.5/7.5 (ns)n/a

1.8/2.5

•

FT
Only

•

GS88036Cyy-###V
GS88032Cyy-###V
GS88018Cyy-###V

256K x 36
256K x 32
512K x 18

250/200/150

3.0–3.8

1.8/2.5•••

GS88237Cyy-###V

256K x 36

333/300/
250/200

2.5

1.8/2.5

PL
Only

GS88037Cyy-###V

256K x 36

333/300/
250/200

2.5

1.8/2.5

•
•

•
•

PL
Only

•

•
•

PL
Only

DCD

JTAG

FLXDrive™

•

•

•

•

•

•

•

•
•

•

•

•

•

JTAG

FLXDrive™

4Mb(Rev. C)GSI P/N

GS84036Cyy-###GS84032Cyy-###GS84018Cyy-###Config128K x 36
128K x 32
256K x 18

Speed
(MHz)

250/200/166/
150

Packages

Pipeline
tKQ
(ns)

VDD
VDDQ

2.5–3.8

3.3
2.5/3.3

BGA
119
(GB)

165
(GD)

165
(GE)

Features

TQFP
209
(GC)

•

100
(GT)

FT/PL

SCD

•

•

•

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 28 -DCD

Low Latency DRAM—2nd Generation(LLDRAM II)
GSI's 2nd generation Low Latency DRAM (LLDRAM II) is an ideal solution for advanced data networking applications. It
offers an eight-bank memory array architecture for high transaction rates, a simplified address interface, and double data
rate transfers. The result is a device that can maintain near-100% bus utilization for many networking tasks.

GSI's LLDRAM devices are ideal for 10GbE, 40GbE and 100GbE packet buffering, lookup tables, and inspection tasks. A
variety of Network Processors and high performance FPGAs are already equipped with RAM ports ready to host LLDRAM
II devices.
Drop-in compatible with RLDRAM 2 (Reduced Latency DRAM)• 533 MHz DDR interface (1.067Gbit/s/pin)•

Common (x9, x18, x36) & Separate (x9, x18) I/O•

8-bank architecture•

15 ns tRC•

Single-cycle (SRAM-like) address load

A complete set of design options:• Configurable read/write latencies & cycle times•

Configurable burst lengths (2/4/8)•

On-Die Input Termination•

IEEE 1149.1 boundary scan•

Traditional multiplexed address bus option for backward compatibility
576Mb LLDRAM II
GSI P/N

ConfigVEXT and VDD
Voltage

I/O
Voltage

GS4576C36yy-###GS4576C18yy-###GS4576C09yy-###16M x 36
32M x 18
64M x 9

VEXT—2.5 V
VDD—1.8 V

1.5 and 1.8 V HSTL

GS4576S18yy-###GS4576S09yy-###32M x 18
64M x 9

VEXT—2.5 V
VDD—1.8 V

1.5 and 1.8 V HSTL

I/OCommonSpeed (MHz)144 FBGA(GM)

533/400/300•

533/400/300•

Speed (MHz)144 BGA(GL)

533/400/300•

533/400/300•

Separate••

288Mb LLDRAM II
GSI P/N

ConfigVEXT and VDD
Voltage

I/O
Voltage

GS4288C36yy-###GS4288C18yy-###GS4288C09yy-###8M x 36
16M x 18
32M x 9

VEXT—2.5 V
VDD—1.8 V

1.5 and 1.8 V HSTL

GS4288S18yy-###GS4288S09yy-###16M x 18
32M x 9

VEXT—2.5 V
VDD—1.8 V

1.5 and 1.8 V HSTL

I/OCommonSeparate••

Part Number Notes:
yy = Package Designator; ### = Speed Bin Designator
All parts are available in Commercial and Industrial temperature options.
Contact your sales representative for Extended or Military temperature option parts.

- 29 -

Part Number Decoder—SigmaQuad™/SigmaDDR™
GSI/QQ
GS P DDD O FF WWW R KK - BBB T C S
P = Product Line Code(1 digit)

WWW = I/O Width/Variation(Up to 3 digits)

T = Temp Grade(Up to 1 alpha)8 = Sync SRAM

6, 7, 8 = x8
9, 10, 11 = x9
18, 19, 20, 21 = x18
36, 37, 38, 39 = x36

Blank = Commercial (0º to 70ºC)
I = Industrial (–40º to 85ºC)
E = Extended (–40º to 125ºC)
M = Military (–55º to 125ºC)

D = Density/Product Family(Up to 3 digits)
18 = 16 or 18Mb
34 = 32 or 36Mb
66, 67, 69 = 64 or 72Mb
130,131, 133 = 128 or 144Mb
258, 261 = 256 or 288Mb
O = Option(Up to 1 digit)

R = Revision Level(Up to 1 alpha)

C = Customization

Blank = Original Mask Set
A = 2nd Generation
B = 3rd Generation
C = 4th Generation
KK = Package(Up to 2 alpha)2 = II/II+
3 = IIIe
4 = IVe
FF = Function Code(Up to 2 alpha)D = SigmaQuad B4
DT = SigmaQuad B4 (Weak/Strong ODT)DV = 2.5 V SigmaQuad B4
E = LV and HV HSTL
H = HV (1.5 V) HSTL
L = LV (1.2 V) HSTL
P = POD
Q = SigmaQuad B2
QT = SigmaQuad B2 (Weak/Strong ODT)QV = 2.5 V SigmaQuad B2
R = SigmaDDR B4
S = SigmaSIO DDR
T = SigmaDDR B2
TT= SigmaDDR B2 (Weak/Strong ODT)CE = 21 mm x 25 mm, 165 CCGA (Rad-Hard)
D = 13 mm x 15 mm, 165 FPBGAE = 15 mm x 17 mm, 165 FPBGAK = 14 mm x 22 mm, 260 BGA
LE = 21 mm x 25 mm, 165 CLGA (Rad-Hard)
GD = Green 13 mm x 15 mm, 165 FPBGAGE = Green 15 mm x 17 mm, 165 FPBGAGK = Green 14 mm x 22 mm, 260 BGA
RE = 165 LBGA (Rad-Tolerant)

V = Voltage Variation
X = Non-catalog Post-assembly Option
Note: If "X" is shown in the Customization
field, the Speed Bin field may become ageneral purpose alphanumeric custom partnumber field.
S = Shipping Optionl(Up to 1 alpha)Blank = Bulk
T = Tape and Reel
QQ = Qualification Status(Up to 1 symbol and 2 alpha)Blank = Pre-Qual or Qualified/ES = Eng Sample*

BBB = Speed Bin(Up to 3 digits)*Note: The /ES mark may appear anywhereon the top surface of the package. The /ES
mark supersedes any other qualification
status mark that may appear on the device.

XX = ns or MHz

Part Number Decoder—Synchronous Burst/No Bus Turnaround
GSI/QQ
GS P DDD O FF WWW R KK - BBB T C S
P = Product Line Code(1 digit)

WWW = I/O Width/Variation(Up to 3 digits)

T = Temp Grade(Up to 1 alpha)8 = Sync SRAM

8 = x818 = x18
32 = x32
36, 37, 38 = x36
72, 73 = x72

Blank = Commercial (0º to 70ºC)
I = Industrial (–40º to 85ºC)
E = Extended (–40º to 125ºC)
M = Military (–55º to 125ºC)

R = Revision Level(Up to 1 alpha)

C = Customization

D = Density/Product Family(Up to 3 digits)
4 = 4 or 4.5Mb
8 = 8 or 9Mb
16 = 16 or 18Mb
32, 36 = 32 or 36Mb
64, 68 = 64 or 72Mb
128, 130 = 128 or 144Mb
256= 288Mb
O = Option(Up to 1 alpha)(Specific meaning varies by product family)
X = Non-catalog Assembly Option
Note: If "X" is shown in the Option Code field,
the Function Code and Speed Bin fields
become general purpose alphanumericcustom part number fields.
FF = Function Code(Up to 2 alpha)
DW = Double Late Write
E = Dual Cycle Deselect (DCD)
F = Flow Through Only
H = High Drive Output
L = Low Drive Output
LW = Late Write
Z = No Bus Turnaround

Blank = Original Mask Set
A = 2nd Generation
B = 3rd Generation
C = 4th Generation

V = Voltage Variation
X = Non-catalog Post-assembly Option
Note: If "X" is shown in the Customization
field, the Speed Bin field may become ageneral purpose alphanumeric custom partnumber field.

KK = Package(Up to 2 alpha)B = 14 mm x 22 mm, 119 BGA
C = 14 mm x 22 mm, 209 FPBGACQ = Ceramic QFP (Rad-Hard)
D = 13 mm x 15 mm, 165 FPBGAE = 15 mm x 17 mm, 165 FPBGA
GB = Green 14 mm x 22 mm, 119 BGA
GC = Green 14 mm x 22 mm, 209 FPBGAGD = Green 13 mm x 15 mm, 165 FPBGAGE = Green 15 mm x 17 mm, 165 FPBGAGT = Green TQFPBBB = Speed Bin(Up to 3 digits)

S = Shipping Optionl(Up to 1 alpha)Blank = Bulk
T = Tape and Reel
QQ = Qualification Status(Up to 1 symbol and 2 alpha)Blank = Pre-Qual or Qualified/ES = Eng Sample**Note: The /ES mark may appear anywhereon the top surface of the package. The /ES
mark supersedes any other qualification
status mark that may appear on the device.

XX = ns or MHz- 24 -

Part Number Decoder—LLDRAM
GSI/QQ
GS P DDD O FF WWW R KK - BBB T C S
P = Product Line Code(1 digit)

WWW = I/O Width/Variation(Up to 3 digits)

T = Temp Grade(Up to 1 alpha)

4 = LLDRAM

9 = x818 = x18
36 = x36

Blank = Commercial (0º to 70ºC)
I = Industrial (–40º to 85ºC)
E = Extended (–40º to 125ºC)
M = Military (–55º to 125ºC)

R = Revision Level(Up to 1 alpha)

C = Customization

DDD = Density/Product Family(Up to 3 digits)
288 = 288Mb
576 = 576Mb
O = Option(Up to 1 alpha)(Specific meaning varies by product family)

Blank = Original Mask Set
A = 2nd Generation
B = 3rd Generation
C = 4th Generation

X = Non-catalog Assembly Option
Note: If "X" is shown in the Option Code field,
the Function Code and Speed Bin fields
become general purpose alphanumericcustom part number fields.

V = Voltage Variation
X = Non-catalog Post-assembly Option
Note: If "X" is shown in the Customization
field, the Speed Bin field may become ageneral purpose alphanumeric custom partnumber field.

KK = Package(Up to 2 alpha)GL = RoHS-compliant (6/6) 144 BGA
GM = RoHS-compliant (6/6) 144 FBGAFF = Function Code(Up to 2 alpha)Blank = Bulk
T = Tape and Reel

BBB = Speed Bin(Up to 3 digits)

C = Common I/O
S = Separate I/O

S = Shipping Optionl(Up to 1 alpha)

QQ = Qualification Status(Up to 1 symbol and 2 alpha)XX = ns or MHz

Blank = Pre-Qual or Qualified/ES = Eng Sample**Note: The /ES mark may appear anywhereon the top surface of the package. The /ES
mark supersedes any other qualification
status mark that may appear on the device.

Part Number Decoder—Asynchronous
GSI/QQ
GS P D O WW R KK - BBB T C S
C = Customization

P = Product Line Code(1 digit)

R = Revision Level(Up to 1 alpha)7 = Async SRAM

Blank = Original Mask Set
A = 2nd Generation
B = 3rd Generation
C = 4th Generation

D = Density/Product Family(1 digit)
0 = 256K
1 = 1Mb
2 = 2Mb
3 = 3Mb
4 = 4 or 4.5Mb
6 = 6Mb
8 = 8 or 9Mb
O = Option(Up to 1 alpha)(Specific meaning varies by product family)
X = Non-catalog Assembly Option
Note: If "X" is shown in the Option Code field,
the Function Code and Speed Bin fields
become general purpose alphanumericcustom part number fields.
WW = I/O Width/Variation(Up to 2 digits)
1 = x14 = x48 = x816, 17 = x16
24 = x24
32 = x32

KK = Package(Up to 2 alpha)B = 14 mm x 22 mm, 119 BGA
U = 6 mm x 8 mm, 48 FPBGA
X = 6 mm x 10 mm, 48 FPBGA
GB = Green 14 mm x 22 mm, 119 BGA
GP = Green TSOP-II
GU = Green 6 mm x 8 mm, 48 FPBGAGX = Green 6 mm x 10 mm, 48 FPBGAV = Voltage Variation
X = Non-catalog Post-assembly Option
Note: If "X" is shown in the Customization
field, the Speed Bin field may become ageneral purpose alphanumeric custom partnumber field.
S = Shipping Optionl(Up to 1 alpha)Blank = Bulk
T = Tape and Reel

QQ = Qualification Status(Up to 1 symbol and 2 alpha)BBB = Speed Bin(Up to 3 digits)

Blank = Pre-Qual or Qualified/ES = Eng Sample*

XX = ns or MHz*Note: The /ES mark may appear anywhereon the top surface of the package. The /ES
mark supersedes any other qualification
status mark that may appear on the device.

T = Temp Grade(Up to 1 alpha)Blank = Commercial (0º to 70ºC)
I = Industrial (–40º to 85ºC)
E = Extended (–40º to 125ºC)
M = Military (–55º to 125ºC)- 25 -