THTVS312_Rev.1.02_E

THTVS312
Transient Voltage Suppressor for I/O Protection

General Description
THTVS312 provides ESD protection to IEC6100-42 on digital I/O. The devices “snap-back” to a low
on-state voltage when the breakdown voltage of thedevice is exceeded. This has the advantage oflowering the overall ESD clamping voltage.
When the device is in the on-state, the dynamic
resistance is 0.3 Ohms (typ), further minimizing theESD clamping. Maximum capacitance is 0.4pF
extremely small which allowing to be used inapplications operating in 6GHz with signal
integrity. It will be protected two single-end signals
or a differential signal operating at 3.6V (Vrwm).
The combination of low peak ESD clamping, low
dynamic resistance, and low capacitance makes thisdevice suitable for digital signal and high speed
applications such as LVDS, USB3.0/3.1, PECL,
V-by-One® HS and general CML interfaces

Features
••
•
•
•
•
•
•

ESD protection IEC 61000-4-2(ESD)±20kV(air), ±17kV(contact)
Protects two I/Os or a d ifferen tial I/O
Low capacitance: 0.3pF typ
Low dynamic resistance: 0.3 Ohm typ
Operating voltage: Vwrm 3.6V
Three pin package (1.0 x 0.6 x 0.4 mm)
Easy to mount package for two line
Packaging: Tape and Reel

Applications
Applications for sensitive and high speed I/Oprotection as followed.
••
•
•••
••

FPGA/SoC/ASSP high speed I/O.
CML/PECL/LVDS physical layer
TMHDMI/DVI/DisplayPort
PCI Express /eSATA
USB3.0/3.1
V-by-One® HS
Sensitive Sensor I/O
Connector and cable I/F

Schematic and Package Dimension

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Pin Configuration

THTVS312 package pin configuration (Bottom view)

Pin Description
Pin No123*1TypeIII*1

Input or Ground
Input or Ground*1
Input or Ground*1

Description
One of three pins is assigned to GroundLow impedance connection to Ground required.

Absolute Maximum Rating
Parameter

SymbolValue

Unit

IPP

4A

Peak Pulse Current (tp = 8/20μs)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)

VESD+/- 20
kV+/- 17

Operating Junction Temperature

TJ-40 to +125°C

Storage TemperatureTSTG-55 to +150°C

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Electrical Characteristics (Tj = 25 ℃)
Parameter
Reverse Stand-OffVoltage
Reverse Breakdown
Voltage

SymbolCondition

Min

TypMaxUnit

VRWM

Pin 1 or 2 to Pin3--

3.6

V

VBR

IBR = 10uA
Pin 1 or 2 to Pin3

7.5

8.8

9.8

VIR

VRWM = 3.6V,
Pin 1 or 2 to Pin3

-

0.01

0.05

μA-

3.5

5-56.5

Reverse Leakage Current

IPP = 1A,

Clamping Voltage

Pin 1 or 2 to Pin3

tp = 8/20μs

IPP =4A,
Pin 1 or 2 to Pin3VC

ESD Clamping Voltage

tp = 0.2/100ns

V

IPP = 16A,
Pin 1 or 2 to Pin3

-9.5

-

--9.5

-

-0.30

-

IPP = -16A,
Pin 1 or 2 to Pin3
Dynamic Resistance

tp = 0.2/100ns(Positive)

Pin 1 or 2 to Pin3

Dynamic Resistance

RDYN

Pin 1 or 2 to Pin3

(Negative)Ω

tp = 0.2/100ns-0.30--0.300.40

VR = 0V, f = 1MHz,
Junction Capacitance

CjPin 1 or 2 to Pin3

pFNotes1) ESD gun return path connected to ESD ground plane.
2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I_TLP and V_TLP averaging window: t1 = 70ns to t2 =90ns.
3) Dynamic resistance calculated from ITLP = 4A to ITLP = 16A

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Typical Characteristics
Junction Capacitance

Positive Surge Clamping Voltage (8/20μs)(Between any I/O and Ground)(Between any I/O and Ground)

ESD Clamping (+8kV Contact per IEC 61000-4-2)

ESD Clamping (-8kV Contact per IEC 61000-4-2)(Between any I/O and Ground)(Between any I/O and Ground)

Positive TLP Clamping Voltage

Negative TLP Clamping Voltage(tperiod=100ns, tr=0.2ns)(tperiod=100ns,tr=0.2ns)

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Typical Characteristics
CrosstalkTypical Insertion Loss - S21

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Application Information
Device Operation
This device utilizes a multi-junction structure that is designed to switch to a low voltage state when triggered by
ESD, EOS, or other transient events. During normal operation, the device will present a high impedance to thecircuit for voltage up to the working voltage (Vrwm) of the device. When the voltage across the device terminals
exceeds the breakdown voltage (Vbr), avalanche breakdown occurs in the blocking junction causing the device
to “snap-back” or switch to a low impedance on-state. This has the advantage of lowering the overall clamping
voltage (Vc) as ESD peak pulse current (Ipp) flows through the device. Once the current subsides, the device
will return to a high impedance off-state. Since this device is bidirectional, it will behave the same way for
positive or negative polarity transient events

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Package

E

D

1PIN INDEXAA2TOP VIE W

SEATING
PLANE

C

A1aaa

SIDE VIEW

Ce

e/2
1L

E/2

2

3b
D/2
BOTTOM VIEW

SymbolA
A1A2b
DEeLaaa

Items
Mounting HeightStandoff
Terminal WidthBody Length
Body Width
Pitch
LengthCoplanarity

Min.
0.37
0.00
0.175
0.90
0.50
0.225

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Nom.
0.40
0.02(0.13)
0.20
1.00
060
0.68 BSC
0.25
0.08

Unit : mm
Max.
0.43
0.05
0.225
1.10
0.70
0.275

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Land Pattern

0.05

0.85

0.20

0.40

0.34

0.68

(Note)
Please carefully consider your SMT conditions (Material of substrate, Solder Composition, Reflow Condition and so on),and adjusts the Land Pattern at your own risk.

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Notices and Requests
1. The product specifications described in this material are subject to change without prior notice.
2. The circuit diagrams described in this material are examples of the application which may not always apply to the customer’s
design. THine Electronics, Inc. (“THine”) is not responsible for possible errors and omissions in this material. Please noteeven if errors or omissions should be found in this material, THine may not be able to correct them immediately.
3. This material contains THine’s copyright, know-how or other intellectual property rights. Copying, reverse-engineer ordisclosing to third parties the contents of this material without THine’s prior written permission is prohibited.
4. Note that even if infringement of any third party’s intellectual property rights should occur by using this product, THine will
be exempted from the responsibility unless it directly relates to the production process or functions of the product.
5. This product is not designed for applications that require extremely high-reliability/safety such as aerospace device, nuclearpower control device, or medical device related to critical care, excluding when this product is specified for automotive use
by THine and used it for that purpose. THine accepts no liability whatsoever for any damages, claims or losses arising out of
the uses set forth above.
6. Despite our utmost efforts to improve the quality and reliability of the product, faults will occur with a certain small
probability, which is inevitable to a semi-conductor product. Therefore, you are encouraged to have sufficiently fail-safe
design principles such as redundant or error preventive design applied to the use of the product so as not to have our productcause any social or public damage.
7. This product may be permanently damaged and suffer from performance degradation or loss of mechanical functionality if
subjected to electrostatic charge exceeding capacity of the ESD (Electrostatic Discharge) protection circuitry. Safety earth
ground must be provided to anything in contact with the product, including any operator, floor, tester and soldering iron.
8. Please note that this product is not designed to be radiation-proof.
9. Testing and other quality control techniques are used to this product to the extent THine deems necessary to support warranty
for performance of this product. Except where mandated by applicable law or deemed necessary by THine based on theuser’s request, testing of all functions and performance of the product is not necessarily performed.
10. Customers are asked, if required, to judge by themselves if this product falls under the category of strategic goods under theForeign Exchange and Foreign Trade Act in Japan and the Export Administration Regulations in the United States ofAmerica on export or transit of this product. This product is prohibited for the purpose of developing military modernization,including the development of weapons of mass destruction (WMD), and the purpose of violating human rights.
11. The product or peripheral parts may be damaged by a surge in voltage over the absolute maximum ratings or malfunction, if
pins of the product are shorted by such as foreign substance. The damages may cause a smoking and ignition. Therefore, youare encouraged to implement safety measures by adding protection devices, such as fuses. THine accepts no liability
whatsoever for any damage or loss caused to the user due to use under a condition exceeding the limiting values.
12. All patents or pending patent applications, trademarks, copyrights, layout-design exploitation rights or other intellectual
property rights concerned with this product belong to THine or licensor(s) of THine. No license or right is granted to the user
for any intellectual property right or other proprietary right now or in the future owned by THine or THine’s licensor. The
user must enter into a license agreement with THine or THine’s licensor to be granted of such license or right.

THine Electronics, Inc.
https://www.thine.co.jp

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