AUTOMOTIVE CURRENTS TRANSDUCERS OPEN LOOP TECHNOLOGYHSNDR 100-(*)X00; HSNDR 200-X00; HSNDR 300-X00; HSNDR 400-X00; HSNDR 500-X00; HSNDR 600-X00;
HSNDR 700-X00; HSNDR 800-X00; HSNDR 900-X00; HSNDR 1000-X00; HSNDR-D01; HSNDR 700-S00/SP1;*

Introduction

Automotive application

The HSNDR series is for the electronic measurement of DC,
AC or pulsed currents in high power and low voltage automotive
applications with galvanic separation between the primarycircuit (high power) and the secondary circuit (electronic circuit).
The HSNDR series gives you the choice of having different
current measuring ranges in the same housing.

● Starter generators

Features● Ratiometric transducer● Open Loop transducer using the Hall effect● Low voltage application● Unipolar +5 V DC power supply● Maximum RMS primary admissible current: defined bybusbar to have T < +150 °C● Operating temperature range: −40 °C < T < 125 °C● Output voltage: full ratio-metric (in sensitivity and offset).

● Inverters● EV applications● DC/DC converter.

Principle of HSNDR Family
The open loop transducers uses a Hall effect integrated circuit.
The magnetic flux density B, contributing to the rise of the Hall
voltage, is generated by the primary current IP to be measured.
The current to be measured IP is supplied by a current source
i.e. battery or generator (Figure 1).
Within the linear region of the hysteresis cycle, B is proportionalto:
B (IP) = a × IP

The Hall voltage is thus expressed by:
UH = (cH / d) × IH × a × IP

Special feature● (*) Single (S) or dual channels sensor for wider measurement
range (D) or redundancy (R).

Advantages● Excellent accuracy● Very good linearity● Wide frequency bandwith

Except for IP, all terms of this equation are constant.
Therefore:
U H = b × IPaconstantb
constant
cH
Hall coefficientdthickness of the Hall plate
IH
current across the Hall plates

The measurement signal UH amplified to supply the user output
voltage or current.

● Very fast response time
● Very low thermal offset drift● Very low thermal sensitivity drift● Galvanic separation● Non intrusive solution.

Part numbering
Product Family

HSNxx xxx-xxx
Product Name

DR = drive
BV = Battery Monitoring
Current range
100900A
Nothing for D

0049 : Connector version.
5099 : Harness version.

Fig. 1: Principle of the open loop transducer.

S = Single output.
R = Redundancy (Dual output/same calibration).
D = Dual output (different calibration).

N° 97.07.99.D01.0; N° 97.06.34.R00.0; N° 97.05.34.S00.0; N° 97.06.60.R00.0; N° 97.05.60.S00.0; N° 97.06.60.S00.0; N° 97.05.44.S00.0; N° 97.06.46.R00.0;
N° 97.05.46.S00.0; N° 97.05.48.S00.0; N° 97.05.50.S00.0; N° 97.05.52.R00.0; N° 97.06.52.R00.0; N° 97.05.52.S00.0; N° 97.05.54.S00.0; N° 97.06.54.S10.0;
N° 97.05.56.S00.0; N° 97.06.58.R00.0; N° 97.05.58.S00.0;

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HSNDR 100-X00...1000-X00
Dimensions (in mm)

Mechanical characteristics

Remark● Plastic casePBT GF30● Magnetic core

FeSi alloy● Uout > Uo when IP flows in the positive direction (see arrowon drawing).

● Busbar

Copper tin plated● Mass		

41 g ±5 %Electronic schematic
LEM Sensor.

● Pins		Brass tin plated● IP level

IPx2.

UC

+5 V

Typical application +5 V
Schematic interface.

1

4.7 nF

47 nF
Gnd

Gnd

U out 1

IPM

Mounting recommendation● Mating connector: Molex duraclick 5 ways:VV

Primary
current

ISL version- Housing 5 w black: 5601230501- Retainer 5 w grey: 5601250500- Terminal tin plated: 5601240101

24.7 nF

CL

Gnd

R
RL

Gnd

Gn Gndd

Uout2 (optional)
CL4

4.7 nF

Gnd
3● Assembly torque: 7 N·m ±10 %

Gnd

Gnd

C

R
RL
Gnd

C

Gnd

Not connected

Screw ISO M6x1 (class 6.8) mounted with flat and spring
washer or toothed screw serrated are recommended.

5

CL < 2.2 nF EMC protection (optional)
RC Low pass filter (optional)
RL > 10 ΚΩ.

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HSNDR 100-X00...1000-X00
Absolute ratings (not operating)Parameter

SymbolMaximum supply voltage

Unit

Min
−0.5

Specification
Typical Max
8V

UC max6.5

Conditions
Continuous, not operating
Exceeding this voltage may
temporarily reconfigure the circuit
until UC comes back to 5V

Output voltage low

Uout L

Output voltage highUout H

Ambient storage temperature

0.2
4.8

TS

°C

UESD HBM

kV

8

ISO 10605 (2008)

Maximum admissible vibration(Random RMS)

γmax

m.s-2

94.8

see profile on page 10/11

RMS voltage for AC insulation test

Ud

kV

2.5

50 Hz, 1 min, IEC 60664 part1 (I <0.1 mA)

Creepage distance

dCp

mm

5.12

Clearance

dCI

mm

5.12

Comparative tracking index

CTI

V

PLC0

Maximum output current

Iout max

mA

−10

10

Maximum output voltage

Uout maxV−0.5

UC+0.5Insulation resistance

RINS

MΩ

500

Electrostatic discharge voltage (HBM)−40@ UC = 5 V, TA = 25 °C

125≥ 600V

500 V DC, ISO 16750-2

Operating common characteristics in nominal range (IP N)
Parameter

SymbolUnit

Specification
Min Typical Max

Conditions

Electrical Data

Supply voltage

UC

V

4.75

5

5.25

Ambient operating temperature

TA

°C

−40

Output voltage

Uout

V

Uout = (UC/5) × (Uo + S × IP )125

Current consumption

ICmA

15 (30) 20 (40)

Load resistanceRLΚΩ

Output internal resistance

Rout

Ω

Ratiometricity error

εr

%

±0.4

@ TA = 25 °C

Sensitivity error

εS

%

±1

@ TA = 25 °C, @ UC = 5 V

Electrical offset voltage

UO E

mV

±4

@ TA = 25 °C, @ UC = 5 V

Magnetic offset voltage

UO M

mV

±3

@ UC = 5 V, @ TA = 25 °C (±6mV for IP≤ 100A)

Linearity error

εL

%

±0.5

% of full scale, method 2@ TA = 25 °C, @ UC = 5 V (..) value fordual output

10
1

10

@ TA = 25 °C

Performance Data

Average temperature coefficient of UO E TCUO E AV mV/°K

-0.1

±0.04

0.1

@ UC = 5 V

Average temperature coefficient of S

TCSAV

%/°K

-0.03

±0.01

0.03

Delay time @ 90 %

µs

3

6

Frequency bandwidth

tD 90
BW

KHz

50

@ −3 dB,

Peak-to-peak noise voltage

Uno ppmV

10

DC to 1 MHz

RMS noise voltage

Uno

mV

1.5

Start-up time

tstartms

Phase shift∆φ°

100 A/µs

1-4

f = 1kHz
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HSNDR 100-X00...1000-X00
HSNDR 100-X00
Parameter

SymbolUnit

Primary current, measuring range (outpout 1)
Primary current, measuring range (outpout 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

Parameter

SymbolUnit

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

SymbolUnit

Specification
Min Typical Max

Conditions

Electrical Data

−100
−100

100
100
20
2.5

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 200-X00
Specification
Min Typical Max

Conditions

Electrical Data

−200
−200

200
200
10
2.5

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 300-X00
Parameter

Specification
Min Typical Max

Conditions

Electrical Data

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

Parameter

SymbolUnit

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

−300
−300

300
300
6.67
2.5

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 400-X00
Specification
Min Typical Max

Conditions

Electrical Data
A
A

−400
−400

400
400
5
2.5

mV/A
V

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 500-X00
Parameter

SymbolPrimary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

Unit

Specification
Min Typical Max

Conditions

Electrical Data
A
A

−500
−500

500
500
4
2.5

mV/A
V

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 600-X00
Parameter

SymbolPrimary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

Unit

Specification
Min Typical Max

Conditions

Electrical Data

A
A
mV/A
V

−600
−600

600
600
3.33
2.5

As option@ TA = 25 °C@ UC = 5V DC

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HSNDR 100-X00...1000-X00
HSNDR 700-X00 & HSNDR 700-S00/SP1
Parameter

SymbolUnit

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

Parameter

SymbolUnit

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

SymbolUnit

Specification
Min Typical Max

Conditions

Electrical Data

−700
−700

700
700
2.86
2.5

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 800-X00

Electrical Data

Specification
Min Typical Max

−800
−800

800
800
2.5
2.5

Conditions

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 900-X00
Parameter

Electrical Data

Primary current, measuring range (output 1)
Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
IP M
S
UO

A
A
mV/A
V

SymbolUnit

Specification
Min Typical Max

−900
−900

900
900
2.22
2.5

Conditions

As option@ TA = 25 °C@ UC = 5V DC

HSNDR 1000-X00
Parameter

Electrical Data

Primary current, measuring range (output 1)

IP M

Primary current, measuring range (output 2)
Sensitivity
Offset voltage

IP M
S
UO

A

Specification
Min Typical Max

−1000

A
−1000
mV/A
V

1000
1000
2
2.5

Conditions
Overall accuracy isn't warranty
above 900A
As option@ TA = 25 °C@ UC = 5V DC

HSNDR-D01
Unit

Specification
Min Typical Max

Parameter

SymbolPrimary current, measuring range (output 1)

IP M1

A

Sensitivity (output 1)

S1

mV/A

20

Offset voltage (output 1)

U O1

V

2.5

Primary current, measuring range (output 2)

IP M2

A

Sensitivity (output 2)

S2

mV/A

4

Offset voltage (output 2)

U O2

V

2.5

Electrical Data

−100

Conditions

100

−500

@ TA = 25 °C@ UC = 5V DC
500@ TA = 25 °C@ UC = 5V DC

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HSNDR 100-X00...1000-X00
Total error εtot (mV) for IP M ≤ 100AHSNDR X00 with ¦ IP M ¦ ≤ 100A Total
Absolute
Accuracy XGerrorOverall
εtot
±70.0

Total
error X
εtot
Absolute
G (mV)

±60.0
±50.0
±40.0
±30.0
±20.0
±10.0
±0.0

Primary current IIPPM
M (A)Overall
TotalAccuracy
error @ 25 °C (mV)Overall
Accuracy(mV)
Overall
Accuracy@T°
T °range
range
(mV)
Total
error @

Total error εtot (mV) for IP M ≤ 100 A
Ip

25 °C Initial

T °C range Initial

25 °C After reliability

T °C After reliability

−IP M

±35

±65

±35

±70

0

±10

±20

±10

±20

IP M

±35

±65

±35

±70

Magnetic offset current IO M VS IP excursion

350.0

HSNDR : Magnetic offset current vs IP excursion (mA)

300.0

Iom (mA)

250.0
200.0
150.0
100.0
50.0
0.0

0

100

200

300

400

500

600

700

800

± IP Excursion (A)NOTE:For HSNDR-Dxx and IP M Low range ≤ 100 A, the global offset (εtot) of Low range could slightly exceed the warranty value(±15 mV). This is due to the magnetic offset generated by the high range current which is also seen by the Low range
channel (see the above chart).
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HSNDR 100-X00...1000-X00
Total error εtot (mV) for IP M > 100A
errorOverall
εtot
HSNDR X00 with ¦ IP M ¦ > 100A Total
Absolute
Accuracy XG
±70.0

Total
error εXtot
Absolute
G (mV)

±60.0
±50.0
±40.0
±30.0
±20.0
±10.0
±0.0

Primary current IIPPM
M (A)Overall
TotalAccuracy
error @ 25 °C (mV)Overall(mV)
TotalAccuracy
error @Overall
Accuracy@T°
T °range
range
(mV)

Total error εtot (mV) for IP M > 100 A
Ip

25 °C Initial

T °C range Initial

25 °C After reliability

T °C After reliability

−IP M

±35

±65

±35

±70

0

±10

±20

±10

±20

IP M

±35

±65

±35

±70

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HSNDR 100-X00...1000-X00
PERFORMANCES PARAMETERS DEFINITIONSDelay time tD 90:

Primary current definition:

The time between the primary current signal (IP N) and theoutput signal reach at 90 % of its final value.

Uout

I [A]

Primary current nominal (IP N)
Primary current, measuring range (IP M)

IT

90 %
Uout

IP
tD 90

IP

Definition of typical, minimum and maximum values:
Minimum and maximum values for specified limiting and safety
conditions have to be understood as such as values shown in“typical” graphs. On the other hand, measured values are partof a statistical distribution that can be specified by an intervalwith upper and lower limits and a probability for measured
values to lie within this interval. Unless otherwise stated(e.g. “100 % tested”), the LEM definition for such intervals
designated with “min” and “max” is that the probability forvalues of samples to lie in this interval is 99.73 %. For a normal(Gaussian) distribution, this corresponds to an interval between−3 sigma and +3 sigma. If “typical” values are not obviouslymean or average values, those values are defined to delimit
intervals with a probability of 68.27 %, corresponding to aninterval between −sigma and +sigma for a normal distribution.
Typical, minimum and maximum values are determined during
the initial characterization of a product.

Output noise voltage:t [µs]

Sensitivity:
The transducer’s sensitivity S is the slope of the straight line
Uout = f (IP), it must establish the relation:
Uout (IP) = UC/5 (S × IP + UO)

Offset with temperature:
The error of the offset in the operating temperature is thevariation of the offset in the temperature considered with theinitial offset at 25 °C.
The offset variation IO T is a maximum variation the offset in thetemperature range:
IO T = IO E max − IO E min

The output voltage noise is the result of the noise floor of theHall elements and the linear amplifier.

The offset drift TCIO E AV is the IO T value divided by thetemperature range.

Magnetic offset:

Sensitivity with temperature:

The magnetic offset is the consequence of an any current on
the primary side. It’s defined after a stated excursion of primary
current.

Linearity:
The maximum positive or negative discrepancy with a reference
straight line Uout = f (IP).
Unit: linearity (%) expressed with full scale of IP N.
Uout

The error of the sensitivity in the operating temperature is therelative variation of sensitivity with the temperature consideredwith the initial offset at 25 °C.
The sensitivity variation ST is the maximum variation (inppm or %) of the sensitivity in the temperature range:
ST = (Sensitivity max − Sensitivity min) / Sensitivity at 25 °C.
The sensitivity drift TCSAV is the ST value divided by thetemperature range. Deeper and detailed info available is ourLEM technical sales offices (www.lem.com).

Non linearity example

Offset voltage @ IP = 0 A:
The offset voltage is the output voltage when the primary current

Referencestraight line

is zero. The ideal value of UO is UC/2. So, the difference of

Max linearity error

IP
Linearity variation in IP N

UO − UC/2 is called the total offset voltage error. This offset error
can be attributed to the electrical offset (due to the resolution of
the ASIC quiescent voltage trimming), the magnetic offset, thethermal drift and the thermal hysteresis. Deeper and detailed
info available is our LEM technical sales offices (www.lem.
com).

Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with
“Tracking_Test Plan_Auto” sheet.
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HSNDR 100-X00...1000-X00
Environmental test specifications:
Refer to LEM GROUP test plan laboratory CO.11.11.515.0 with “Tracking_Test Plan_Auto” sheet.
Name

Standard

Conditions

ELECTRICAL TESTS
Phase shift

LEM Procedure

100 Hz to 100 kHz 20 A peak

Noise measurement

LEM Procedure

Sweep from DC to 1 MHz

Delay time di/dt

LEM Procedure

100 A/μs
I pulse = IP max

dv/dt

LEM Procedure

5;10;20 kV/ μs
V = 1000V

RMS voltage for AC insulation test

IEC 60664 part 1

2.5 kV AC / 1 min /50 Hz (I < 0.1 mA)

Insulation resistance test

ISO 16750-2 (2010)

500 V DC time = 60 s
RINS ≥500 MΩ Minimum

ENVIRONMENTAL TESTSHigh T °C High Humidity
Electrical connection

JESD 22-A101 (03/2009)

1000 h 85°C / 85 % RH
UC = 5 V DC, IP = 0 A

Thermal Cycle Test
(Simplified profile)IEC 60068-2-14 Test Nb (01/2009)

T min −40 °C , T max = +125 °C
1cycle = 480 min, 30 cycles

Thermal ShockISO 16750-4 § 5.3.2 (04/2010)

1000 cycles
30 min "−40 °C" // 30 min "+85 °C"
UC not connected IP = 0 A

High T °C Storage

IEC 60068-2-2 Bd (07/2007)

125 °C for 1000 h
UC not connected IP = 0 A

Low T °C Storage

IEC 60068-2-1 Ad (03/2007)−40 °C for 240 h
UC not connected IP = 0 A

Mechanical ShockISO 16750-3 § 4.2.2 (12/2012)

500 ms/s2, 6 ms Half Sine @ 25 °C
10 shocks of each direction
UC not connected IP = 0 A

Random Vibration in T °C profile

IEC 600068-2-27 (02/2008)22 h for each axe; Test condition : see sheet "vibration profile".
UC = 5 V only during Op. mode 3.2; IP = 0 A; monitoring.

EMC TESTS ES96200 (11.2011)
Radiated Emission
Absorber Lined Shielded
Enclosure (ALSE)CISPR25 (2008) Table9 - Class5

Freq = 150 kHz to 2.5 GHz
Criteria A acceptance @ 5% of 2 V

Radiated Immunity
Bulk Current Injection (BCI)GWM3097 § 3.4.1 (2015)

Level : GMW 3097 (2015) § 3.4.1 Table 13 - Level1(100mA) (ISO11452-4(2011) Annex E Table E1 Level2)
F = 1MHz to 400 MHz , Criteria A acceptance @ 5% of 2V

Radiated Immunity
Anechoic chamber

GWM3097 § 3.4.2 (2015)

Level : GMW3097 (2015) § 3.4.2 Table 14 - Level 2 (100V/m)
F =400 MHz to 1 GHz; Level = 100 V/m (CW, AM 80%)
F=0.8 GHz to 2 GHz; Level = 70 V/m (CW, PM PRR = 217 Hz PD= 0.57 ms); F = 1GHz to 2 GHz; Level = 70 V/m (CW)
Criteria A acceptance @ 5% of 2 V

ESD Test

GWM3097 § 3.6.3 (2015)

Level :GMW3097 (2015) § 3.6.3.3 Table 28
Contact discharges: ±4, ±6 kV; Air discharges: ±8 kV
UC = NO power supply (≡ unconnected), Criteria B

Free Fall

ISO 16750-3 § 4.3 (12/2012)

Height = 1 m Concrete floor
3 axis, 2 directions by axis, 1 sample by axis

Package drop

TBD

TBD

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HSNDR 100-X00...1000-X00

Random Vibration Profile @ −40 °C < T < 125 °C

10

1

0.1

0.01
10

100

1000

10000

ProfileHz

PSD [(m/s2)2 /Hz]

Frequency

Profile 1

10
100
300
500
1000
2000

10
10
0.51
5
5
5

Test duration: 22h (each X, Y, Z Axis)
RMS acceleration value: 9.66 grms

Climatic Profile
Temperatures:
Step 1: 60 min from +20 °C to −40 °C
Step 2: 90 min at −40 °C
Step 3: 150 min from −40 °C to +125 °C
Step 4: 110 min at +125 °C
Step 5: 70 min from +125 °C to +20 °C
Steps 1 to 5 are repeated 3 times
Steps 6: 60 min at +20 °C

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HSNDR 100-X00...1000-X00

Recommendations for use:
Storage:
The LEM transducers must be stored in a dry location, within the following ambient room conditions (< 40 °C and < 60 % RH).
The product should be stored in its original packing. Ensure during storage and transport, the units are not damaged by applying excess weight to the packaging. The transducers must not be stored more than three months. Maximal stackup storage of
secondary container (pallet) must not exeed 2.
Unpacking:
When unpacking, care must be taken with cutting tools not to damage the transducer.
Handling:
The LEM transducers must be handled with care and not undergo any shocks or falls (fall = scrap). It is recommended to handle
the transducer as long as possible inside its original packing (thermoform tray on customer’s assembly station). It is forbidden tohandle the transducers by their terminals. To avoid problems of ESD, it is recommended not to touch secondary terminals. Any
rework operation are forbidden and will conduct part out of LEM warranty.
Installation:
The workshop and the people in contact with the transducers must be ESD protected. Before installing, be sure to check thatthe transducer corresponds to the required application. Be sure that the air gap between the housing of the transducer and theprimary bar is suffisant to avoid damage in case of vibrations.
LEM do not recommand customers to make any maintenance on LEM sensors other wise, it will drive sensors directly out of
warranty.
Concerning installation and re-installation , cauthougly care need to be taken for taped sensors same for screwed sensors.
Sensors fixed by clips must be scraped after any dismounting from the original locations.

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