hZ

CiRfSEK26F:C

ªM 24th Jan. 2017

COBANDæ'3SOI-STJoľĊbęŃ|æä÷ýąÄû¥ Ĵïc{· P[N]RĩĬîİķæ(COBANDæ) STJ (Superconducting Tunnel Junction) ´ þÚĤéà$´Éº&x¾«Āõ þÚĤ«Āõ*(³ þÚĤéà$´3N\aDEG=FD-SOI-MOSFET ãMB9a þÚĤéà$(STJ¬gõĔ«ĀÈæ

COsmic BAckground Neutrino Decay Search =E;H?¤¥ĩĬ'įî|(:Q^=%Ģy§,(ÞçkÜì1P[N]RÞç6y$3
measure precisely

Neutrino DecayNeutrino

m32 − m22 oscillation
Eγ =2m3

 P[N]R)hĺë (T > Ο(1012) c : COBE+AKARIĢy®»02)
 bç(P[N]RēÃ%&3ĥĽčÛP[N]R63©ê43ĩĬ:Q^=)25meV(ĊhĆ½ : 50μm)
 L\W^Kî¬gÉº&î¬gõ(STJ)"{TSTJ øùÒNaQ^úję|î¬gõ
{;L>IOX (Superconducting Tunnel Junction : STJ)øùÒ / Īŀ / øùÒ(AaO9JI×â
STJ"_qCJ87
1. øùÒ'î|sğ
2. (î|>Tt6ĬÀŃ|p
3. ÀŃ|Īŀń6NaQ^46ªË%#ăĢ

STJ"v[200ns$10T^E(îsğ#mj
STJ(ĔĀ)1.5μs

Nb / Al STJ t«XRcgGal : ;G:AL34-L
E0 : ~z".>I1
Δ : {\".>I11D:C
Nb / Al STJ (Al : 70um)"PO"25meV"1 photonlN"m"t«XQRg

Nb/Al-STJ(ä÷o Our Nb/Al – STJ is fabricated at AIST CRAVITY facility.

 }

[structure]

Nb / Al / AlOx / Al / Nb-> 100nm / 70um / 1nm / 70nm / 200nm[General IV characteristic of STJ]
Suppress the Josephsoncurrent by magnetic field

STJ IV – curve (100um  



Nb/Al-STJ ]>ªË q²ñ@ľĊbLeakagecurrent)

NbAl SiO2

Light on/offSize

Ileak @0.4mV

100um

2 nA50um

300 pA

20um

100pA

þÚĤ«Āõ(Òs%³STJlN"ey ]>ªË³ö : < 100pA Í 50pA (20μmħ Nb/Al-STJ)
 ]>ªË(³)íNb/Al– STJ ]>ªË(Ĥĭÿ V¨!%&bX c!#¦  lNrp(£©`WY :< 3K)!k*dsk¢k!U'ao

M.Ukibe et al., Jpn. J.Appl. Phys. 51, 010115(2012)
M.Ohkubo et al., IEEE Trans. Appl. Super, 24, 2400208(2014) 300mK$/´Éº STJ¬gõ(Ĕ«ĀÉº (ĔĀ : g μsec) ĦĹ(ÙÐ·çÎĵ( ĂpF)(éà$/ĔùÕÉº ÚÑ¿ª (ĦĹ(ĦĎº : 100μW @300mK , 0.25W @4.2K)

þÚĤéà$´3N\aDEG
FD-SOI : Fully Depleted – Silicon On Insulator
 IZQ^ěČÖ'ĳð4SOI-MOSFET <Z]7(ĸć9;a'0!#p49;aXM8'ĿòªėĒÖ6ÓĠĶĈó»(ġ ­'4K $/FD-SOI-MOSFETÖ'´3%6¼±

JAXA/ISAS AIPC 1185,286-289(2009)u§

FD-SOI-MOSFET(ªzÂex.) Nô W/L = 10μm / 1.0μm

O_9aªË Ids[V]O_9aªË(O_9aªėĭÿ (Vgs=2V) ¢ ¢(3K)
Ň <Z]7á fĕ'03
O_9aªË(fĕkinkó»
ňþÚĤ'3%
VdsÚèå$ f2ł3
O_9aªė Vds[V]O_9aªË(?Nªėĭÿ (Vds=1.8V) ¢ ¢(3K)

ŉÌĐ&f2

Ŋņªė(fĕ?Nªė Vgs[V]f(0'þÚĤéà$FD-SOIFET(Â)ÖĤéà1bÅ3ĦĎe(w)$(Ěëz&Ł)n1441(Â)
?Nªė$O_9aªË6đ3%'0!#Ál«Āõ%#3%ÉºþÚĤx¾«Āõ MB9a
SOI - STJ4 (the 4th trial Unit) 97SkZ Using MOS-FETs instead of resistance B,<@:2Z Self bias voltage

 97B/J+Z Output impedance is decreased
TypeW [μm]L [μm]

M1

Nch-CLst2

40

1M2

Pch-CLst2

110M3

Nch-CLst2

1.610M4

Nch-CLst2

70

1

M5

Nch-CLst2

60

1C2

MIM cap.

100 fF

SOI-STJ46STJĔ«ĀÈæ STJ¬gõ'yªË6ËÍÔ$ÉÝî_B6Ĳğ3 dæ$) ( "6¬¸3
1. STJ¬gõĔSOI-STJ4(u*ùÕ4#3
2. ùÕ4Ĕ«Ā4#3kw ZrxjVdc

Wave length : 465nm
Pulse width : 59ps

Amp. IN_k_kì«Āõ(g6;C`E@V$ī s9aUHaE : 1MΩ AC®j 512 ¢Ė

Amp. OUT

[Lazar 20kHz] Vdc = 0.43V 512Ave.
ÏĻ(peakn30.1mV/div.

Amp. IN
Amp*(s6n3%
ÏĻ(peakn3(µı'Ąbā(+)

20μs/div.

Amp. OUT

1mV/div.

1.4mV

Amp'ùÕ4STJĔ)Î'peak6¦"
4't#Amp(g)¹Æ«Ā#2
amp(º6»#320μs/div.

[Lazar 20kHz] Vdc = 0.43V 512Ave.
Amp._IN

INPUT : Vpp = 35uVOUTPUT : Vpp = 1.4mV35μV

Gain ~ 40

1.4mV

Amp._OUTAmp(ĉĊĭÿ6Ģyv1MHz sinĊ't#Gain)40ĝ.

[Lazar 20kHz] Vdc = 0.43V 512Ave.
Amp._IN

SOI-STJ4*(sĊð_B%r#Î'U>6¦"INPUT : Vpp = 35uVOUTPUT : Vpp = 1.4mV
 35μV
STJlNfSOI-STJ4$|()'
Gain ~ 40

SOI-STJ4(gĊðsĊð%)Ę'(U>6¦
1.4mV «Ā#3Amp(ĉĊĭÿ6Ģy
 SOI-STJ4ã'«Āü'FE¾«Āãs!#3v1MHz sinĊ't#Gain)40ĝ.
 SOI-STJ4$|(STJlNfSOI-STJ4k()'Amp._OUT+%.
P[N]RĩĬîİķæ(COBAND])'¡#
Nb/Al-STJî¬gõ%þÚĤx¾«Āõ(ä÷o6#3þÚĤéà$´3N\aDEG%#FD-SOI-MOSFET¶c«ĀÈæ(®»2­300mKéà$/´Éº¨þÚĤx¾«Āõ(SOI-STJ4)6STJĔ«ĀÈæ6i!

1.

STJ¬gõĔSOI-STJ4*ùÕ4%

2.

SOI-STJ4*ùÕ4STJ¬gõĔ«Ā4%6¸3%$dæ1SOIã6þÚĤ«Āõ)300mKéà$/Ĕ«Āī,gÉº$ĞęŃ|æl~'Ņ54ÚĤī,g6iďl~*(Ç/ß432

BACKUPSOI-amp.6sinĊ«ĀÈæ
Function
GeneratorGNDGNDGNDGNDGND

4.7 uF
GND

GND

ĦĹ{}
SOI-STJ4GND(ACnO , 1 MΩ)

STJSTJ!¬P*¡i(5-I : 895mA)
GND

 Function Generator1Ċq10mV(sinĊ6s CH1(Amp*(s6YPG#7LQG$Ø&1Amp*(sĊq61mV'&30'3
06J75C_k

CH1 INPUT 100Hz 't#Ál'Gaing#3v(S97Eªė6ģ£&1
GNDGain(ĉĊÂ6Ģy

_k

CH2

INPUT 100Hz (512Ave.)

1mV/div.

INPUT Vpp = 0.92mV

4ms/div.
50mV/div.

OUTPUT Vpp = 89mV

4ms/div.

INPUT 1kHz (512Ave.)

1mV/div.

INPUT Vpp = 0.92mV400μs/div.
50mV/div.

OUTPUT Vpp = 93mV

400μs/div.

INPUT 10kHz (512Ave.)

1mV/div.

INPUT Vpp = 0.91mV

40μs/div.
50mV/div.

OUTPUT Vpp = 93mV

40μs/div.

INPUT 100kHz (512Ave.)

1mV/div.

INPUT Vpp = 0.80mV

8μs/div.
50mV/div.

OUTPUT Vpp = 88mV

8μs/div.

INPUT 1MHz (512Ave.)

1mV/div.

INPUT Vpp = 0.44mV

1μs/div.
10mV/div.

OUTPUT Vpp = 16mV

1μs/div.

¤°(ĉĊĭÿĢyĉĊÂFrequency characteristic of cold
pre-amplifier(SOISTJ4) @300mKGraph120Vdd1 = 1.8V
Vss1 = Vb =GND
Vdd2 = 1.1V
Vss2 = -0.7V
V2 = 0.55V
V3 = 1.476V
V5 = 0.15V

Gain

12010080

g#
Gain#^100[6040200102

3104

510Bias Voltage
Vdd1 = 1.8V
Vss1 = 0V
Vdd2 = 1.1V
Vss2 = -0.7V
V2 = 0.4V
V3 = 1.5V

80
60
40

V5 [V]
0.30.4Input
Vpp =1mV

1 MHz

1MHz sinĊ't#Gain)40Į6ăĢ10100 kHz

100

Gain

FrequencyCharacteristic @300mK20610Frequency[Hz]0102103104105106107

Frequency [Hz]

Nb/Al-STJ(w/ SOI) IVĢy

CH2

SOI-amp(bias)#GND'Ê%

¯ÀļĜ
4.7uF
amp

Float'#(++%STJ%ċĨ'4.7uF
s!#+

CH1

IVĢy(®»
Input:1Hz
Rref=10MΩ
I(coil):895mANo Laser
Temp. : 300mK

10nA
500uV

IVĢy&1_BĲğæ
If we try to observe the Laser
response, the current which flow
through STJ should be about 40nA.