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3

4COBAND Collaboration Members (As of Nov. 2016)
Shin-Hong Kim, Yuji Takeuchi, Kenichi Takemasa, Kazuki Nagata, Kota
Kasahara, Shunsuke Yagi, Rena Wakasa, Yoichi Otsuka (Univ. of Tsukuba),
Hirokazu Ikeda, Takehiko Wada, Koichi Nagase (JAXA/ISAS),
Shuji Matsuura (Kwansei gakuin Univ),
Yasuo Arai, Ikuo Kurachi, Masashi Hazumi (KEK),
䠈Chisa Asano䠈Takahiro Nakamura, Makoto Sakai (Univ. of
Takuo Yoshida䠈
Fukui),
Satoshi Mima, Kenji Kiuchi (RIKEN),
H.Ishino, A.Kibayashi (Okayama Univ.),
Yukihiro Kato (Kindai University),
Go Fujii, Shigetomo Shiki, Masahiro Ukibe, Masataka Ohkubo (AIST),
Shoji Kawahito (Shizuoka Univ.),
Erik Ramberg, Paul Rubinov, Dmitri Sergatskov (Fermilab)䠈
Soo-Bong Kim (Seoul National University)4Motivation of Q-decay search in CQB
Q /LIHWLPH• Standard Model expectation: = Ο(10 ) yr
• Experimental lower limit: = Ο(10 ) yr
• Left-Right symmetric model predicts = Ο(10 ) yr for
mixing angle ~0.02,IZHREVHUYHGWKHQHXWULQRUDGLDWLYHGHFD\DWWKHOLIHWLPHPXFKVKRUWHUWKDQWKH60H[SHFWDWLRQLWZRXOGEH• 3K\VLFVEH\RQGWKH6WDQGDUG0RGHO• 'LUHFWGHWHFWLRQRI& %• 'HWHUPLQDWLRQRIWKHQHXWULQRPDVV
–

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− 10

yr
5

Expected photon wavelength spectrum from CQB decays
OJ distribution in ν →=Sharp Edge with
1.9K smearing

OdNJ/dO(a.u.)+

Red Shift effect10
100

500 O[Pm]

100
10

50

20

50

(25meV),IDVVXPH
≪
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5

EJ [meV]No other source has such a sharp edge structure!!
6

Surface brightness IQ [MJy/sr]

C B radiative decay and Backgrounds
100

Zodiacal Emission~8MJy/sr

CMB

ZE
10

AKARI COBE

1

Cosmic Infrared
Background (CIB)~0.1~0.5MJy/sr

ZL
0.1
0.01
ISD
0.001

DGL

CQB decay

CQB decay

SL

0.0001
1

10

1000

100

wavelength [Pm]

1000

200

500

100

50

EJ [meV]

Expectedfor

1Jy = 10

20

10

5

2

= 5 × 10 yr~0.5MJy/sr
Excluded (S.H.Kim 2012)= 1 × 10 yrs~25kJy/sr

spectrum= 50meVat λ᧹50μm

W⁄ m ⋅ Hz

7

Zodiacal Emission around O=50Pm• Infrared Space Observatory (ISO)Surface brightness IQ [MJy/sr]– ISOCAM/LW: 32u32 pixel array of SiGa (O=5~16Pm)– Fit to single blackbody (T~270K)

Reach et al (2003)
8

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Aiming at a sensitivity to ߥ lifetime for= Ο 10 yr
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9

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10

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11

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12

Surface brightness IQ [MJy/sr]

Requirements for the photo-detector in the rocket experiment
Zodiacal Emission=8MJy/sr•
Î1.1
10-17 W / 8pix
@ O=50Pm

100 CIB summary from Matsuura et al.(2011)

Zodiacal Emission

CMB

10
1
0.1

Zodiacal Light

0.01

ISD
0.001

0.0001DGL

CQB decay

SL

Integrated flux from galaxy counts

1

1000

100

10

wavelength [Pm]Neutrino Decay=25kJy/sr•Î3.310-20 W / 8pix
@ O=50Pm= 1 × 10 yr=
13Noise Equivalent Power (NEP) Requirements for the photo-detector
 1HXWULQRGHFD\= 50 meV = 10 \UV 
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We are trying to achieve NEP ~O(10 ) ⁄by using• Superconducting tunneling junction detector• FIR single-photon counting technique
15

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16

STJ energy resolution
Signal = Number of quasi-particles
. . =

1.7Δ
Resolution = Statistical fluctuation in number of quasi-particles⁄ = 1.7Δ ⁄ÎSmaller superconducting gap energy Δ yields better energy
resolution
Δ: Superconducting gap energy
F: fano factor (~0.2 for Nb)
E: Photon energy
G: Back-tunneling gain

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Tc :SC critical temperature
Need ~1/10Tc for practicaloperation
17

STJ candidates
Nb/Al-STJ• Well-established• Δ~0.6meV by the proximity effect from Al• Operation temperature <400mK• Back-tunnelling gain G~10

• Nq.p.=25meV/1.7Δu10~ 250
VE/E~0.1 for E=25meVÎ25meV single-photon detection is feasible in principleÎDeveloping for the rocket experiment
Hf-STJ• Not established as a practical photo-detector yet by any group• Nq.p.=25meV/1.7Δ~ 735• 2% energy resolution for a 25meV single-photon is achievable
if Fano factor <0.3 for HfÎSpectrum measurement without a diffraction gratingÎDeveloping for a future satellite experiment18

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21

FD-SOI-MOSFET at Cryogenic temperature

FD-SOI : Fully Depleted – Sillicon On Insulator
9 Very thin channel layer in MOSFET No floating body effect caused by charge accumulation in the body9 )'62,026)(7LVUHSRUWHGWRZRUNDW.
JAXA/ISAS AIPC 1185,286-289(2009)-/RZ7HPS3K\V Channel W

Channel L

22

FD-SOI MOSFET Id-Vg curve
Id-Vg curve of W/L=10Pm/0.4Pm at |Vds|=1.8V

p-MOS

P$

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̶ 3K

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Both p-MOS and n-MOS show excellent performance at 3K (Weconfirmed they function down to 300mK).
Threshold shifts, sub-threshold current suppression and increase of
the carrier mobility at low temperature.
23

10mV

SOI prototype amplifier

Q)
䠲

Test
pulse

Amplifier Buffer
stage
stage

P9

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24

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PV',90RQLWRUIRU62,
DPSLQSXW• Connection via a ceramic capacitor between a 20Pm sq. Nb/Al-STJ chip and a
SOI amplifier chip on the same cold stage• Input impedance of the SOI amplifier is a few tens of kΩ.
• A parasitic capacitance from STJ bias lines is about 1nF in total䠖corresponding
to an impedance of 160Ω for a signal of 1Ps timescale.
25

Op-amp Circuit for STJ design
$UULYLQJLQWKLVZLQWHU: PP / PP


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,UHI

telescopic cascode differential amplifierFeedback C=2pF x R=5MOhm = 10Ps
Power consumption ~150PW
,UHI



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Telescopic
cascode,UHIu

Bufferstage
9'' 966 9

,UHI!P$26

Q$',9Calibration of STJ by Far-infrared Laser
T=1.6K
˩9',9$1E$O67-LVLOOXPLQDWHGE\),5ODVHUWKURXJKDFKRSSHU I a+] XVLQJDIDULQIUDUHGPROHFXODUODVHUDSSDUDWXVDW),58) 8RI)XNXLPPVT1E$O
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COBAND projectJapanese FY
Setup design

2016

2017

2018

2019

2020

2021

Satellite exp.
Rocket exp.

STJ detector

Nb/Al-STJ
䠄䠯䠫䠥-䠯䠰䠦䠅
R&D

Production
Rocket exp.

Hf-STJ R&D
Nb/Al-STJタィ䞉㛤Ⓨ

Cryogenic
electronics,
readout circuit

R&D

Production

OpticsDesignProduction

DesignRocket-borne
refrig.

DesignProduction

DesignMeasurement
AnalysisAnalysis tool devel.

DesignAnalysis

Simulation

28

Summary• :HSURSRVHDVRXQGLQJURFNHWH[SHULPHQWWRVHDUFKIRUQHXWULQRUDGLDWLYH
GHFD\LQFRVPLFQHXWULQREDFNJURXQGDQGDIROORZLQJVDWHOOLWH
H[SHULPHQW• 5HTXLUHPHQWVIRUWKHURFNHWH[SHULPHQWGHWHFWRULVDSKRWRGHWHFWRUZLWK1(3a2  :+]
• 1E$O67-DUUD\ZLWKDGLIIUDFWLYHIRUWKHURFNHWH[SHULPHQW– 1E$O67-IDEULFDWHGDW&5$9,7<PHHWVRXUUHTXLUHPHQWV– )'62,UHDGRXWLVXQGHUGHYHORSPHQWDQGDOPRVWUHDG\IRU67-VLJQDODPSOLILFDWLRQDWFU\RJHQLFWHPSHUDWXUH– ),5FDOLEUDWLRQIRU67-LVJRLQJWREHUHDG\• ,PSURYHPHQWRIWKHQHXWULQROLIHWLPHORZHUOLPLWXSWR2 \UV LVIHDVLEOHIRUVHFPHDVXUHPHQWLQDURFNHWERUQHH[SHULPHQWZLWKWKH
GHWHFWRUDQG2 \UV IRUDGD\VDWHOOLWHERUQHH[SHULPHQW

29

Backup30

Energy/Wavelength/Frequency= 25 meV= 6 THz= 50
31

Limit on LRSM parameters from TWIST0DQLIHVW/56&/> 592 eV−0.020 < < +0.017

1RQPDQLIHVW/56&/⁄−0.020 <> 578 eV⁄
< +0.020

32

&RVPLFEDFNJURXQGQHXWULQR & %10⁄'HQVLW\ FP~7KHXQLYHUVHLVILOOHGZLWKQHXWULQRV+RZHYHUWKH\KDYHQRW
EHHQGHWHFWHG\HW

3+=
4= 110⁄cm JHQHUDWLRQ
4
=
11

10

= 1.95K= 0.5meV/c
33

Neutrino Mass and Photon Energy• From neutrino oscillation
– Δ
• Δ

=

−

=

−

= 2.4 × 10
= 7.65 × 10

• CMB (Plank+WP+highL) and BAO– ∑ < 0.23 eV
Î50meV<=−2

m3=50meV<87meV=14~24meV=51~89Pm

EJ =24.8meVEγ =24meV

m2=8.7meV
m1=1meV34

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•
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STJ current-voltage curve
Current
2Δ

B field

Voltage
Signal current
Leak current

I-V curve with light illumination
Optical signal readout
Tunnel current of Cooper
pairs (Josephson current)
is suppressed by applying
magnetic fieldÎ $SSO\DFRQVWDQWELDVYROWDJH _9_Δ 
DFURVVWKHMXQFWLRQDQGFROOHFWWXQQHOLQJFXUUHQWRITXDVLSDUWLFOHVFUHDWHGE\SKRWRQV
9 Leak current causes background noise
36

STJ back-tunneling effect• Bi-layer fabricated with superconductors of different gaps
'Nb>'Al to enhance quasi-particle density near the barrier– Quasi-particle near the barrier can mediate multiple Cooper pairs• Nb/Al-STJ Nb(200nm)/Al(70nm)/AlOx/Al(70nm)/Nb(200nm)• Gain: 䡚10
Al/AlOx/AlNb
Nb
Si waferwafe
fPhoton

Nb

Al

Al

Nb
37

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SOI charge-sensitive pre-amplifier development

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42

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 Potential to STJ array (Large area STJ)

640 umSTJ
via
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FET

43

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