Data Sheet
MASamsung V-NAND SSD
990 EVO

2024 Data Sheet
Revision 1.1

Revision 1.0

1

SAMSUNG PROPRIETARYData SheetSAMSUNG PROPRIETARYLEGAL DISCLAIMER

SAMSUNG ELECTRONICS CO., LTD. RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are provided for reference purposes only. All information discussed
herein may change without notice and is provided on an “AS IS” basis, without warranties of any kind. This
document and all information discussed herein remain the sole and exclusive property of Samsung Electronics Co.,
Ltd. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted
under this document, by implication, estoppels or otherwise. Samsung products are not intended for use in life
support, critical care, medical, safety equipment, or similar applications where product failure could result in lossof life or personal or physical harm, or any military or defense application, or any governmental procurement towhich special terms or provisions may apply. For updates or additional information about Samsung products,contact your nearest Samsung representative. All brand names, trademarks and registered trademarks belong totheir respective owners.

COPYRIGHT © 2024

This material is copyrighted by Samsung Electronics Co., Ltd. Any unauthorized reproductions, use or disclosure ofthis material, or any part thereof, is strictly prohibited and is a violation under copyright law.

TRADEMARKS & SERVICE MARKSThe Samsung logo is the trademark of Samsung Electronics Co., Ltd. All other company and product names may be
trademarks of the respective companies with which they are associated.
For more information, please visit www.samsung.com/ssd and www.samsungssd.com.
To download the latest software & manuals, please visit www.samsung.com/samsungssd

Revision 1.02Data SheetSAMSUNG PROPRIETARYTECHNICAL SPECIFICATIONSUsage Application
Interface

Hardware Information

Samsung SSD 990 EVO

Client PCs

PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0

Capacity1)

Controller

1TB

NAND Flash Memory
Cache Memory

Max 80.15 x Max 22.15 x Max 2.38 (mm)Dimension

Sequential Read

PowerConsumption
fReliability

Warranty6)

Supporting Features
Data Security

5,000MB/s

Sequential WriteQD 32
Thread 16
Active 5)(Avg.)

Idle(Typical)
Temp.
Shock

4,200MB/s

Ran. Read
ReadWrite

Operating

Non-Operating

Humidity

Vibration

4.9W

5.5W

800KIOPS
4.7W

60mW

5 mW
0°C to 70°C

-40°C to 85°C

5% to 95% non-condensing

1,500G(Gravity), duration: 0.5ms, 3 axis

Non-Operating

MTBF

Period700KIOPS(Measured by S.M.A.R.T. Temperature Proper airflow recommended)

Non-Operating

TBW

680KIOPS
4.5W

PS3(APST on)

4,200MB/s
90KIOPS

800KIOPS

Ran. Write

5,000MB/s
20KIOPS

90KIOPS

Ran. Write

PS4 (L1.2)

M.2 (2280)

20KIOPS

Ran. Read

QD 1Thread 1

Samsung V-NAND TLC

HMB(Host Memory Buffer)

Form Factor

Performance(Up to.)2) 3) 4)

Samsung in-house Controller

2TB

600TB

20~2,000Hz, 20G
1.5 million hours
5 years limited

TRIM (Required OS support), Garbage Collection, S.M.A.R.T

1,200TB

AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667)

1) 1GB = 1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, thus the actual available capacity
may differ from the labeled capacity.
2) 990 EVO is backward compatible with PCIe 4.0 x4 and 3.0 x4.
3) Sequential and random performance measurements are based on IOmeter1.1.0. Performance may vary based on SSD’s firmware version, system
hardware & configuration. Test System: AMD Ryzen 9 7950X 16-Core Processor CPU@4.50GHz, DDR5 4800MHz 16GBx2, OS-Windows 11 Pro
64bit, Chipset-ASRock-X670E-Taichi.
4) Sequential and random write performance was measured with Intelligent TurboWrite technology being activated. Intelligent TurboWrite operates onlywithin a specific data transfer size. For detailed information, please contact your local service center.
5) Active power consumption is measured with IOmeter1.1.0 version with AMD Ryzen 9 7950X 16-Core Processor CPU@4.50GHz, DDR5 4800MHz
16GBx2, OS-Windows 11 Pro 64bit, Chipset-ASRock-X670E-Taichi.
6) All documented endurance test results are in compliance with JESD218 Standards. Please visit www.jedec.org for detailed information on JESD218
Standards. TBW means Terabytes Written, Warranty provides coverage for the stated time period or the TBW, whichever comes first. Please refer to thedetailed warranty statement here at http://www.samsung.com/samsungssd

Revision 1.03

Data SheetSAMSUNG PROPRIETARYPRODUCT LINEUPDensity

1TB(1,000GB*)
2TB(2,000GB*)

Model Name
MZ-V9E1T0

MZ-V9E2T0

Box Contents

Samsung SSD 990 EVO 1TB
Warranty Statement
Samsung SSD 990 EVO 2TB
Warranty Statement* GB: 1GB = 1,000,000,000 bytes. The actual usable capacity may be less than the labeled capacity.

Model Code

MZ-V9E1T0BW
MZ-V9E1T0B/AM
MZ-V9E2T0BW
MZ-V9E2T0B/AM

For more information, including but not limited to the warranty provided for this product, and to download the latest
software & manuals, please visit www.samsung.com/ssd and www.samsungssd.com.

TEST CONFIGURATION

Below you will find a list of system configurations Samsung used to obtain the results reported in this Data Sheet.
Performance/power data was measured with the SSD as a secondary drive in a fan cooling desktop system.
Interface
OSRead/Write Performance

Power Consumption

Windows 11 Pro 64bit

Windows 11 Pro 64bit

PCIe 4.0 x4 / 5.0 x2

PCIe 4.0 x4 / 5.0 x2

CPUAMD Ryzen9 7950x 16-Core Processor
CPU@4.5GHz

AMD Ryzen9 7950x 16-Core Processor
CPU@4.5GHz

Chipset

ASRock-X670E-Taichi

ASRock- X670E-Taichi

MemoryTest Program

Revision 1.0

DDR5 4800MHz 16GBx2
IOmeter 1.1.0

DDR5 4800MHz 16GBx2
IOmeter 1.1.0

4

Data Sheet

Revision History
Revision
Number1.0
1.1

Revision 1.0

SAMSUNG PROPRIETARY
Description

Initial Release

Minor Update – Interface Notations and Dimension

5

Revision Date

January, 2024
January, 2024