Single N-channel MOSFET
ELM4N6032FAA-N

http://www.elm-tech.com■General description■Features

ELM4N6032FAA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge and lowgate threshold voltage.

• Vds=60V• Id=13A (Vgs=10V)• Rds(on) = 8.5mΩ (Vgs=10V)• Rds(on) = 12.0mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60

V

Gate-source voltage

Vgs±2013V

Ta=25°C

Continuous drain current(Vgs=10V)

Id

Ta=100°C

NoteA1A

2Pulsed drain current
Single pulse avalanche energy

Idm860EAS80mJ

3

Avalanche current
Power dissipation

IasPd40
2.7

AW

4Tstg
Tj

- 55 to 150- 55 to 150°C°C

Ta=25°C

Storage temperature range
Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-to-ambientt≤10s

Symbol
RθjaTyp.
-Max.
45

Steady stateRθja-80■Pin configuration

Unit°C/W

Note
1
1■Circuit
DSOP-8(TOP VIEW)
18273645Pin No.

Pin name

1
2
3SOURCESOURCESOURCE

45GATEDRAIN

678DRAIN
DRAIN
DRAIN

GS

Rev.1.1
1/4

Single N-channel MOSFET
ELM4N6032FAA-N■Electrical characteristics
Parameter

SymbolCondition

http://www.elm-tech.com
Tj=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V

60----1--5V

Drain-source leakage current

Idss

Vds=48V
Vgs=0V

Gate-body leakage current

Igss

Vds=0V, Vgs=±20V--±100nA

Vgs(th) Vds=Vgs, Id=250μAVgs=10V, Id=10A
Static drain-source on-resistance Rds(on)Vgs=4.5V, Id=8A

1.2--

2.5
8.5
12.0

VForward transconductance
Diode forward voltage
Diode continuous source current

Gfs
VsdIs-50-

Pulsed source current
DYNAMIC PARAMETERS

Ism-

Input capacitance

Ciss

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge (10V)

Coss
Crss

Tj=55°C

Gate threshold voltage

Gate-source charge

Qg
Qgs

Vds=5V, Id=10A
Is=1A, Vgs=0V
Vgs=Vds=0V, Force current

Vgs=0V, Vds=25V, f=1MHz

Vgs=10V, Vds=48V
Id=10A

μAmΩ

2

1.2
10SVA21, 5-

60

A2, 5-

3307-

pF-

201
151-

pF
pF-

57.0
8.7

-

nCnC-

14.0
16.2

-

nC
ns

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgd
td(on)

Vgs=10V, Vds=30V

-

41.2

-

ns

Turn-off delay timeTurn-off fall timetd(off) Id=10A, Rgen=3.3Ω
tf-

56.4
16.2

-

nsns

Reverse recovery time
Reverse recovery chargetrr
Qrr-

24.0
15.0-

nsnCtrIf=10A, di/dt=100A/μs

Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The EAS data shows Max. rating . The test condition is Vdd=50V, Vgs=10V, L=0.1mH, Ias=40A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.1
2/4

Single N-channel MOSFET
FETek Technology Corp.

FKS6032

ELM4N6032FAA-N
N-Ch 60V Fast Switching MOSFETs■Typical electrical and thermal characteristics

http://www.elm-tech.com

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance v.s Gate-Source Voltage

Fig.3 Forward Characteristics of Reverse

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ

Fig.6 Normalized RDSON vs. TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

Rev.1.1
3/43

Single N-channel MOSFET
ELM4N6032FAA-N

FKS6032
http://www.elm-tech.com

N-Ch 60V Fast Switching MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1
DUTY=0.5
0.2

0.1

0.1
0.05
0.02

0.01

0.01

P DM

SINGLET ON
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

0.1

110t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1L x IAS2 x2TfVGSToff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.1
4/4