Single N-channel MOSFET
ELM4N6004FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6004FDA-N uses advanced trench technology toprovide excellent Rds(on), low gate charge and low gate
threshold voltage.

• Vds=60V• Id=23A (Vgs=10V)• Rds(on) = 30mΩ (Vgs=10V)• Rds(on) = 38mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60

V

Gate-source voltage

Vgs

±20
23.0

V

Tc=25°C
Continuous drain current

Tc=100°C
Ta=25°C

15.05.6Id

Ta=70°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Power dissipation

Tc=25°C
Ta=25°C

Junction and storage temperature range

NoteA

123

4.5
Idm
Eas

46
25.5

AmJ

Ias

22.6
34.7

APdW

2.0

Tj, Tstg-55 to +150°C

SymbolRθjaRθjc

Typ.
-Unit°C/W°C/W

4■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case■Pin configuration

Max.
62.0
3.6

Note1
1

■Circuit
DTO-252(TOP VIEW)
Pin No.
1

Pin nameGATE

23DRAIN
SOURCEGS

2Rev.1.0
1/4

Single N-channel MOSFET
ELM4N6004FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

60--V

Zero gate voltage drain current

Idss

--

15μA

1.2-

±100
2.5nAV

Vgs=10V, Id=15A

-

2530

Vgs=4.5V, Id=10A
Vds=5V, Id=15A

-

30
1738-

Is=1A, Vgs=0V--

1.2
2346VAA

Vgs=0V, Vds=15V, f=1MHz-

1378
86-

pF
pF

Vds=0V, Vgs=0V, f=1MHz-64
3.2

-pF
Ω-

12.6

-nC

Vds=48V, Vgs=0V
Vds=48V, Vgs=0V, Tj=55°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

Static drain-source on-resistanceRds(on)mΩForward transconductance

Gfs

Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS

VsdIsIsm

Input capacitance
Output capacitanceCissCossReverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (4.5V)

CrssRgGate-source charge
Gate-drain charge

Qgs
Qgd

Vgs=4.5V, Vds=48V, Id=12A-

3.2
6.3-

nCnC

Turn-on delay timetd(on)
tr
Vgs=10V, Vds=30V, Id=10A-

8.0
14.2-

nsns

td(off) Rgen=3.3Ω
tf-

24.4
4.6-

nsns

Turn-on rise timeTurn-off delay timeTurn-off fall time

Vgs=Vds=0V, Force current

Qg

2S2
1, 52, 5NOTE :1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=22.6A.
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.

Rev.1.02/4

Single N-channel MOSFET
FETek Technology Corp.

FKD6004

ELM4N6004FDA-NN-Ch 60V Fast Switching MOSFETs

http://www.elm-tech.com■Typical characteristics
Typical Characteristics

351210VGS=733

VGS=5V

8VGS=4.5V

RDSON (mΩ)

ID Drain Current (A)ID=12A

VGS=10V

VGS=3V

630

428
202500.5

11.5

VDS , Drain-to-Source Voltage (V)22Fig.1 Typical Output Characteristics468

VGS (V)

10Fig.2 On-Resistance v.s Gate-Source

1210

ID=12A

VGS Gate to Source Voltage (V)IS Source Current(A)1086

TJ=150℃

TJ=25℃

4200.20.40.60.8

VSD , Source-to-Drain Voltage (V)8642001Fig.3 Forward Characteristics of Reverse

51015

QG , Total Gate Charge (nC)2025Fig.4 Gate-Charge Characteristics
2.5

Normalized On Resistance

1.5

Normalized VGS(th)

2.0

1

1.5

0.5

1.0

0.5

0-50

050

100

TJ ,Junction Temperature (℃)-50150Fig.5 Normalized VGS(th) v.s TJ

050100T J , Junction Temperature (℃)

150

Fig.6 Normalized RDSON v.s TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A3Rev.1.03/4Single N-channel MOSFET

http://www.elm-tech.com
N-Ch 60V Fast Switching
MOSFETs

FETek Technology Corp.

10000

100.00F=1.0MHz

10us

Ciss
Capacitance (pF)

FKD6004

ELM4N6004FDA-N

100us

10.00

1ms

1000

ID (A)

10ms
100ms

1.00

DC

Coss

100

0.10

Crss

TC=25℃
Single Pulse

0.01

101591317

VDS Drain to Source Voltage(V)

210.1

25

Fig.7 Capacitance

110100VDS (V)1000

Fig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.2
0.1

0.1
0.05
0.02

0.01

0.01

PDM

T ONTSINGLE
D = TON/T
TJpeak = TC+P DMXRθJC0.001
0.00001

0.0001

0.001

0.01

0.1

110100t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1
L x IAS2 x2Tf

VGS

Toff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.04/4