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Table I. High Power RF Termination Performance Requirements
Parameter
Passband Frequency Range
Duty Cycle
RF Input Power (operational)• Average• Peak• Multi-carrier• Average
RF Input / Output Impedance
RF Input VSWR (passband)
Carrier Frequency Separation Range• Minimum• Maximum
Passive Intermodulation Distortion• Wideband• Transmit Band
(1930 to 1990 MHz)• PCS Receive Band
(1850 to 1910 MHz)RF Shielding EffectivenessConnector Interface
Connector Material / Plating

UnitsMHzSpecification
DC to 2300

Notes
(see Note 1)

Continuous
Watts
Watts

150 max.
1000 max.

(See Note 4).
RF input power handling shall betested at the maximum baseplate
temperature of +85 oC.

# @ Watts 4 @ 37.5
Ohms

50
1.15:1 max.

kHzMHz30
60.0

Nominal(See Note 4)(see Note 2)
dBc
dBc-123.0 max.
-123.0 max.

dBc

-143.0 max.

dB

90 min.
Type N (f)Marking

Corrosion ResistanceYes(see Note 3)
All connector surfaces shall have a
corrosion inhibiting finish. Low PIM
plating.
(see Note 6)
Marking shall be IAW Figure 1.
NOTE: Figure 1 not supplied.
(see Note 5)
Chemically coat IAW B-449, Class 1.

NOTES for Table I:1.

It is desirable that a single unit operate over the passband frequency range of DC to 2300 MHz . The passband
frequency range may be narrowed to 1850 to 1990 MHz to optimize performance or significantly reduce cost.

2.

Passive intermodulation distortion shall be measured utilizing a mutually acceptable industry standard (twotones at +43 dBm). Carrier frequency separation shall be varied from minimum to maximum. The reflectedintermodulation products shall be measured at the RF connector. The intermodulation products shall bemeasured relative to the individual carrier power levels input to the RF connector.

3.

RF shielding effectiveness shall be measured with a quarter-wave stub positioned 1.0 cm from the unit at anylocation. RF shielding shall be measured over the operational frequency range. The level of RF shielding shallbe relative the RF input power present at the RF connector. RF shielding shall be measured with themaximum RF input power level present at the RF connectors.

4.

Power handling shall be tested at maximum temperature and maximum altitude. Crest factor of TDMAmodulated carrier shall be 4 dB. Unit shall be able to handle the instantaneous peak power levels created by 4
TDMA carriers applied simultaneously, at 37.5W/carrier average power.

5.

Appropriate safety labels shall be affixed to the unit in accordance with UL-1950. A “thermal hazard” label
shall be affixed to the unit.

6.

Silver-plated stainless steel connectors shall be acceptable for low PIM plating.
SIZE

DWG NOAREV1000364

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Figure 1. Low Power RF Assembly Outline Drawing
SIZE

DWG NOAREV1000364

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TRANSCEPT PROPRIETARY - DATA ON THIS PAGE SUBJECT TO RESTRICTIONS CITED ON TITLE PAGE

87rejectline

Chargeable Failures

6REJECT
5CONTINUE TEST

4ACCEPT3210024681012Total Test Time (multiples of MTBF min)Figure 2. Field Reliability MTBF Test
Table II. Accept-Reject Criteria for Field Reliability
Chargeable Failures
012345678

Decide at t ≥n/an/a
0.7
2.08
3.46
4.86
6.24
7.62
9.74

SIZE

DWG NOAREV1000364

SCALE

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