Single N-channel MOSFET
ELM4N6056FDA-N

http://www.elm-tech.com■General description■Features

ELM4N6056FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge andlow gate threshold voltage.

• Vds=60V• Id=58A (Vgs=10V)• Rds(on) = 8.5mΩ (Vgs=10V)• Rds(on) = 12.5mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

60V

Gate-source voltage

Vgs±2058.0V

Tc=25°C

Continuous drain current(Vgs=10V)

Id

Tc=100°C

NoteA

1, 6A

2

Pulsed drain current
Single pulse avalanche energy

Idm

36.6
125

Eas

26.5mJ

3

Avalanche current

IasPd2352

AW

4Tstg
Tj-55 to 150-55 to 150°C°C

Power dissipation

Tc=25°C

Storage temperature range
Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-ambient (Steady state)

Symbol
RθjaTyp.
-Max.
60.0

Unit°C/W

Note
1

Thermal resistance junction-case ambientRθjc-2.4°C/W

1■Pin configuration■Circuit
DTO-252(TOP VIEW)
Pin No.

Pin name

12GATEDRAIN

3SOURCEGS

Rev.1.01/4

Single N-channel MOSFET
ELM4N6056FDA-N

http://www.elm-tech.com■Electrical characteristics
Parameter

SymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=250μA
Vds=48V, Vgs=0V
Idss
Vds=48V, Vgs=0V, Tj=55°C

60--1--5Gate-body leakage current
Gate threshold voltage

Igss Vgs=±20V, Vds=0V
Vgs(th) Vds=Vgs, Id=250μA

1.2-±1002.3Static drain-source on-resistanceRds(on)Vgs=10V, Id=20A-

7.5

8.5-

11.0-

12.5
1.2---Drain-source leakage current

VμAnA
VmΩ

2V

230

A

1,5,61270-pF

Diode forward voltage

Vsd

Vgs=4.5V, Id=15A
Vgs=0V, Is=1A

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitanceIs

Vgs=Vds=0V, Force current

Ciss

Output capacitance
Reverse transfer capacitance

CossCrss

Vds=30V, Vgs=0V, f=1MHz-479
40-pF
pF

Gate resistance
SWITCHING PARAMETERSTotal gate charge (10V)Rg

Vds=0V, Vgs=0V, f=1MHz

-

1.4-

ΩQg-

15.0-

nC

Gate-source charge

Qgs-

3.5-nC

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgdtd(on)

-

4.2
7.0-

nC
ns

Turn-off delay timeTurn-off fall timetr
Vds=30V, Vgs=10V, Id=15A
td(off) Rgen=3.3Ω
tf

-

4.5
26.0
5.0-

nsnsns

Reverse recovery time
Reverse recovery charge

trr
Qrr

-2272-

nsnC

Vds=30V, Vgs=10V, Id=15A

If=15A, di/dt=100A/μs

NOTE :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Single pulse width limited by junction temperature Tj(max)=150°C.
3. The Eas data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=23A
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.
6. The maximum current rating is package limited.

Rev.1.02/4Single N-channel MOSFET
FETek Technology Corp.

■Typical characteristics

FKD6056

ELM4N6056FDA-N
N-Ch 60V Fast Switching MOSFETs

http://www.elm-tech.com

Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs G-S Voltage

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3

Rev.1.0
3/4

Single N-channel MOSFETFKD6056

ELM4N6056FDA-N

http://www.elm-tech.comN-Ch 60V Fast Switching MOSFETs

FETek Technology Corp.

Fig.7 CapacitanceFig.8 Safe Operating Area

Normalized Thermal Response (RθJC)

1

DUTY=0.5
0.3
0.1
0.1

0.05
0.02

PDM

0.01

D = TON/T

SINGLE PULSE

0.01
0.00001

TON

T

TJpeak = TC + PDM x RθJC

0.0001

0.001

0.01

0.1

1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)

TrTon

Td(off)BVDSS
BVDSS-VDD

VDD

IAS

10%
VGS

1L x IAS2 x
2TfVGSToff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A4

Rev.1.0
4/4