Dual N-channel MOSFET
ELM54910WA-N

http://www.elm-tech.com■General description■Features

ELM54910WA-N uses advanced trenchtechnology to provide excellent Rds(on)and low gate charge.

N1 channel:

N2 channel:· Vds=40V· Id=10.0A· Vds=40V· Id=10.0A· Rds(on) = 19mΩ (Vgs=10V)· Rds(on) = 25mΩ (Vgs=4.5V)· Rds(on) = 10mΩ (Vgs=10V)· Rds(on) = 12mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage

Vds
Vgs

Continuous drain current(Tj=150°C)
Pulsed drain current
Avalanche current

Ta=25°C
Ta=70°C

Tc=25°C

Power dissipation

Idm

1082010830IasEas1052010Id

L=0.1mH

Avalanche energy

Ta=25°C. Unless otherwise noted.
Limit
Unit
N1
N24040V±20±20V

2.8

Pd

Tc=70°C

Operating junction temperature
Storage temperature range

AAmJ
W

1.8
150-55 to 150

TjTstg

A°C°C■Thermal characteristics
Parameter
Thermal resistance junction-to-ambient

SymbolRθja■Pin configuration
SOP-8(TOP VIEW)
18273645Typ.

Max.
62.5Unit°C/W■Circuit
Pin No.
1Pin name
SOURCE12GATE1345SOURCE2GATE2DRAIN2678DRAIN2DRAIN1DRAIN1

D1D2G2G1S1S2Rev.1.0
1/8

Dual N-channel MOSFET
ELM54910WA-N

http://www.elm-tech.com■N1 Electrical characteristics
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min. Typ. Max. Unit

Condition

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=40V
Vgs=0V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

On state drain current

Id(on) Vgs=10V, Vds≥5V
Vgs=10V, Id=10A
Rds(on)Vgs=4.5V, Id=8A

Static drain-source on-resistance
Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

Is

Coss
Crss

Gate-source charge

Qgs

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgd
td(on)Qg

V
1

Ta=85°C

Vds=15V, Id=5.0A
Is=2A, Vgs=0V

CissOutput capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

Turn-off delay timeTurn-off fall time40

Vgs=0V, Vds=20V, f=1MHz

Vgs=4.5V, Vds=20V
Id≡10.0A

tr
Vgs=10V, Vds=20V, Id≡10.0A
td(off) RL=2.0Ω, Rgen=1.0Ωtf

10±100
3.0

1.0
20μA
nA
V
A

15.8
21.5
250.8519.0
25.0mΩ

1.20

SV

1.8

A

600

pF

100
45pF
pF

5.0

10.0nC

1.5nC

1.5715nC
ns

9168203018nsnsns

Rev.1.0
2/8

AFN4910W

Alfa-MOS

40V N1 & N2 Pair
Technology
Dual N-channel MOSFET
Enhancement Mode MOSFET
ELM54910WA-N■N1 Typicalelectricaland thermal characteristics
N1 Channel
TypicalCharacteristics©Alfa-MOS Technology Corp.
Rev.A Nov. 2015

http://www.elm-tech.com

www.alfa-mos.com
Page 4
Rev.1.0

3/8

AFN4910W

Alfa-MOS

40V N1 & N2 Pair
Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET
ELM54910WA-N
N1 Channel

Typical Characteristics©Alfa-MOS Technology Corp.
Rev.A Nov. 2015

http://www.elm-tech.com

www.alfa-mos.com
Page 5

Rev.1.0
4/8

Dual N-channel MOSFET
ELM54910WA-N

http://www.elm-tech.com■N2 Electrical characteristics
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min. Typ. Max. Unit

Condition

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=32V
Vgs=0V

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

On state drain current

Id(on) Vgs=10V, Vds≥5V
Vgs=10V, Id=10A
Rds(on)Vgs=4.5V, Id=8A

Static drain-source on-resistance
Forward transconductance
Diode forward voltage

Gfs
Vsd

Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance

IsCossCrss

Gate-source charge

Qgs

Gate-drain charge
Turn-on delay timeTurn-on rise time

Qgd
td(on)Qg

V
1

Ta=85°C

Vds=15V, Id=12.4A
Is=1.5A, Vgs=0V

Ciss

Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

Turn-off delay timeTurn-off fall time40

Vgs=0V, Vds=20V, f=1MHz

Vgs=4.5V, Vds=10V
Id≡8.0A

trVgs=10V, Vds=20V, Id≡8.0A
td(off) RL=2.0Ω, Rgen=1.0Ωtf

10±1003.0

1.030

μAnAVA

8.8
10.2
560.8510.012.0mΩ

1.20

SV

1.8A

2000

pF

260
150

pF
pF

15.0

30.0

nC

6.8

nC

5.2
1020

nC
ns

1530
1030
60
20nsnsns

Rev.1.0
5/8

AFN4910W

Alfa-MOS

40V N1 & N2 Pair
Technology
Dual N-channel MOSFET
Enhancement Mode MOSFET
ELM54910WA-N■N2 Typicalelectricaland thermal characteristics
N2 Channel
TypicalCharacteristics©Alfa-MOS Technology Corp.
Rev.A Nov. 2015

http://www.elm-tech.com

www.alfa-mos.com
Page 6

Rev.1.0
6/8

AFN4910W

Alfa-MOS

40V N1 & N2 Pair

Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET
ELM54910WA-N
N2 Channel

Typical Characteristics©Alfa-MOS Technology Corp.
Rev.A Nov. 2015

http://www.elm-tech.com

www.alfa-mos.com
Page 7

Rev.1.0
7/8

AFN4910W

Alfa-MOS

40V N1 & N2 Pair
Technology
Dual N-channel MOSFET
Enhancement Mode MOSFET
ELM54910WA-N■Test
circuit and waveform
TypicalCharacteristics©Alfa-MOS Technology Corp.
Rev.A Nov. 2015

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/8