Single N-channel MOSFET
ELM4N8048FDA-N

http://www.elm-tech.com■General description■Features

ELM4N8048FDA-N uses advanced trench technology
to provide excellent Rds(on), low gate charge andlow gate threshold voltage.

• Vds=80V• Id=48A (Vgs=10V)• Rds(on) = 6.5mΩ (Vgs=10V)• Rds(on) = 8.5mΩ (Vgs=4.5V)■Maximum absolute ratings
Parameter

Symbol

Limit

Unit

Drain-source voltage

Vds

80

V

Gate-source voltage

Vgs±2048.0V

Tc=25°C

Continuous drain current(Vgs=10V)

Id

Tc=100°C

NoteA

1, 6A

2

Pulsed drain current
Single pulse avalanche energy

Idm

42.5
170

Eas

57.8mJ

3

Avalanche current

IasPd3456AW

4Tstg
Tj

-55 to 150-55 to 150°C°C

Power dissipation

Tc=25°C

Storage temperature range
Operating junction temperature range■Thermal characteristics
Parameter
Thermal resistance junction-ambient

Symbol
Rθja

Typ.
-Max.
62.0

Unit°C/W

Note
1

Thermal resistance junction-case ambient

Rθjc-

2.2°C/W

1■Pin configuration■Circuit
DTO-252(TOP VIEW)
Pin No.

Pin name12GATEDRAIN

3SOURCEGS

Rev.1.0
1/4

Single N-channel MOSFET
ELM4N8048FDA-N

http://www.elm-tech.com■Electrical characteristics
ParameterSymbolCondition

Tj=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Vgs=0V, Id=250μA
Vds=64V, Vgs=0V
Idss
Vds=64V, Vgs=0V, Tj=55°C

80--1--

5Gate-body leakage current
Gate threshold voltage

Igss Vgs=±20V, Vds=0V
Vgs(th) Vds=Vgs, Id=250μA

1.2-±100
2.3

Static drain-source on-resistanceRds(on)Vgs=10V, Id=20A

-

4.3

6.5-

6.3
75

8.5
-

Drain-source leakage current

VμAnAVmΩ

Forward transconductance

Gfs

Vgs=4.5V, Id=20A
Vds=5V, Id=20A

Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Vsd
Is

Vgs=0V, Is=1A
Vgs=Vds=0V, Force current

-0.77
-

1.00
48

V
A

Input capacitance
Output capacitance

Ciss
Coss

Vds=40V, Vgs=0V, f=1MHz-2860
410-pF
pF

Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERSTotal gate charge (10V)

CrssRg

Vds=0V, Vgs=0V, f=1MHz-

380.5-

pF
Ω-

40.0-

nC

Gate-source charge
Gate-drain charge
Turn-on delay timeQgs
Qgd

Vds=40V, Vgs=10V, Id=20A

-

7.2
6.5-

nC
nC

td(on)
tr
Vds=40V, Vgs=10V, Id=20A
td(off) Rgen=3Ω

-

8.3
4.2
36.0-

nsns
nstf
trr
Qrr

-

6.9
2789-

nsnSnC

Turn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery time
Reverse recovery charge

Qg

If=20A, di/dt=100A/μs

2S21, 5NOTE :1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%.
3. The Eas data shows Max. rating . The test condition is Vdd=25V, Vgs=10V, L=0.1mH, Ias=34A
4. The power dissipation is limited by 150°C junction temperature.
5. The data is theoretically the same as Id and Idm, in real applications, should be limited by total power dissipation.
6. The maximum current rating is package limited.

Rev.1.0
2/4

Single N-channel MOSFET
FETek Technology Corp.

ELM4N8048FDA-N

FKD8048

N-Ch 80V Fast Switching
MOSFETs
http://www.elm-tech.com■Typical characteristics
Typical Characteristics

Fig.1 Typical Output Characteristics

Fig.2 On-Resistance vs G-S Voltage

Fig.3 Source Drain Forward Characteristics

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs TJ

Fig.6 Normalized RDSON vs TJ

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

3Rev.1.0
3/4

Single N-channel MOSFET

FKD8048

ELM4N8048FDA-N

http://www.elm-tech.com
N-Ch 80V Fast Switching MOSFETs

FETek Technology Corp.

Fig.8 Safe Operating Area

Fig.7 Capacitance
Normalized Thermal Response (RθJC)

1
DUTY=0.5
0.2
0.1

0.1
0.05
0.02
0.01

0.01

PDM

SINGLET ON
T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001

0.0001

0.001

0.01

0.1

1t , Pulse Width (s)Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=VDS
90%

BVDSS

Td(on)Tr
Ton

Td(off)BVDSS
BVDSS-VDD
VDD

IAS

10%
VGS

1L x IAS2 x2Tf

VGS

Toff

Fig.10 Switching Time Waveform

Fig.11 Unclamped Inductive Switching Waveform

Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A

4

Rev.1.0
4/4