Complementary MOSFET
ELM54614CWSA-N■General Description

http://www.elm-tech.com■Features

ELM54614CWSA-N uses advanced
trench technology to provide excellent
Rds(on) and low gate charge.

N-channel••••

P-channel

Vds=40V
Id=10.0A
Rds(on)=35mΩ(Vgs=10V)
Rds(on)=45mΩ(Vgs=4.5V)■Maximum Absolute Ratings
Parameter

SymbolDrain-source voltage
Gate-source voltage• Vds=-40V• Id=-10.0A• Rds(on)=35mΩ(Vgs=-10V)• Rds(on)=45mΩ(Vgs=-4.5V)

Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
UnitVds
Vgs

40±20-40±20VV

Id

10.0
6.0-10.0-6.0A

Idm

20-20

A

L=0.1mH

Ias
Eas8
3.2-AmJ

Tc=25°C
Tc=70°C

Pd

2.8
1.8

2.8
1.8W

Operating junction temperature

Tj

150

150°C

Storage temperature range

Tstg-55 to 150-55 to 150°C

Typ.

Max.
62.5
62.5

Unit°C/W°C/W

Ta=25°C
Ta=70°C

Continuous drain current(Tj=150°C)
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation■Thermal Characteristics
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-ambient

SymbolRθjaRθja■Pin configuration
SOP-8(TOP VIEW)
18273645Device
N-chP-ch■Circuit
Pin No.

Pin name

12SOURCE1
GATE134SOURCE2
GATE2567DRAIN2DRAIN2DRAIN1

8DRAIN1• N-ch• P-ch
D1

G1

D2

G2
S1

S2Rev.1.0
1/ 8

Complementary MOSFET
ELM54614CWSA-N

http://www.elm-tech.com■Electrical Characteristics (N-ch)Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=32V, Vgs=0V

40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA

1.0

On state drain current

Id(on) Vgs=10V, Vds≥5V

8

Static drain-source on-resistanceRds(on)Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS

Gfs
VsdIs

Input capacitance
Output capacitance

CissCoss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time

Qgs

Turn-on rise timeTurn-off delay timeTurn-off fall timeV
110μA±100
2.5nA
VA

Vgs=10V, Id=10.0A
Vgs=4.5V, Id=6.0A

27
33

Vds=10V, Id=8.0A
Is=1.5A, Vgs=0V

27
0.85

Vgs=0V, Vds=20V, f=1MHz385
68pF
pF

Crss

30pF

Qg

3.3
Vgs=4.5V, Vds=10V, Id≡8A

35
45
1.20
1.6

5.0mΩ
SVAnC

1.0nC

Qgdtd(on)1.2
918nCnstrVgs=10V, Vds=20V, Id≡8A
td(off) RL=2.0Ω, Rgen=1.0Ω

11102220nsns714nstf

Rev.1.0
2/ 8

AFC4614WS

Alfa-MOS

40V N & P Pair

Complementary MOSFET
Technology
Enhancement Mode MOSFET
ELM54614CWSA-N■TypicalElectrical andThermal )Characteristics (N-ch)
TypicalCharacteristics( N-Channel©Alfa-MOS Technology Corp.
Rev.A July 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 4

Rev.1.0
3/ 8

Alfa-MOS

40V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET

ELM54614CWSA-N
Typical Characteristics ( N-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2016

http://www.elm-tech.com

www.alfa-mos.com
Rev.1.05
Page

4/ 8

Complementary MOSFET
ELM54614CWSA-N

http://www.elm-tech.com■Electrical Characteristics (P-ch)
Parameter

SymbolTa=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit

Conditions

STATIC PARAMETERS
Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

Zero gate voltage drain current

Idss

Vds=-40V, Vgs=0V-40
Ta=85°C

Gate-body leakage current
Gate threshold voltage

Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA-1.0

On state drain current

Id(on) Vgs=-10V, Vds≥-5V-20

Static drain-source on-resistanceRds(on)μA±100-3.0nAVA

28
36

Vds=-15V, Id=-5.0A
Is=-2.0A, Vgs=0V

20
-0.8

Vgs=0V, Vds=-20V, f=1MHz

1100
145

pF
pF

115

pF

Gfs
Vsd
Is

Input capacitance
Output capacitance

Ciss
Coss

Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge

CrssGate-source charge

Qgs

Gate-drain charge
Turn-on delay time

Qgdtd(on)Turn-on rise timetrVgs=-4.5V, Vds=-20V
td(off) Id≡-5.0A, RL=4Ω, Rgen=1Ω

Turn-off delay timeTurn-off fall time-1-20

Vgs=-10V, Id=-10.0A
Vgs=-4.5V, Id=-6.0A

Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS

Qg

V

Vgs=-4.5V, Vds=-20V
Id≡-5.0A

tf

13.0

35
45-1.2-1.7

20.0mΩ
SV
A

nC

4.5

nC

6.5
4080

nC
ns

55
30

10060

nsns

1220nsRev.1.05/ 8

AFC4614WS

Alfa-MOS

40V N & P PairTechnology
Enhancement Mode MOSFET
Complementary MOSFET
ELM54614CWSA-N
TypicalCharacteristics( P-Channel■TypicalElectrical andThermal)Characteristics (P-ch)©Alfa-MOS Technology Corp.
Rev.A July 2016

http://www.elm-tech.com

www.alfa-mos.com
Page
Rev.1.06

6/ 8

AFC4614WS

Alfa-MOS

40V N & P Pair
Enhancement Mode MOSFET

Technology

Complementary MOSFET
ELM54614CWSA-N

Typical Characteristics ( P-Channel )©Alfa-MOS Technology Corp.
Rev.A July 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 7
Rev.1.0

7/ 8

AFC4614WS

Alfa-MOS

40V N & P Pair
Technology
Complementary MOSFETEnhancement Mode MOSFET
ELM54614CWSA-N
TypicalCharacteristics■Test circuit
and waveform©Alfa-MOS Technology Corp.
Rev.A July 2016

http://www.elm-tech.com

www.alfa-mos.com
Page 8

Rev.1.08/ 8